Quantum Confined Silicon Clathrate Quantum Dots
NASA Astrophysics Data System (ADS)
Lusk, Mark; Brawand, Nicholas
2013-03-01
Silicon (Si) allotropes can be synthesized in such a way that tetrahedrally bonded atoms form cage-like structures with bulk mechanical and opto-electronic properties distinct from those of diamond silicon (dSi). We use DFT, supplemented with many-body Green function analysis, to explore the structural stability of clathrate Si quantum dots (QDs) and to characterize their confinement as a function of crystal symmetry and size. Our results show that that there is a simple relationship between the confinement character of the QDs and the effective mass of the associated bulk crystals. Clathrate QDs and dSiQDs of the same size can exhibit differences of gap energies by as much as 2 eV. This offers the potential of synthesizing Si dots on the order of 1 nm that have optical gaps in the visible range but that do not rely on high-pressure routes such as those explored for the metastable BC8 and R8 phases. These results prompt the question as to how minimal quantum confinement can be in dots composed of Si. More broadly, clathrate QDs can in principle be synthesized for a wide range of semiconductors, and the design space can be further enriched via doping. NSF Renewable Energy Materials Research Science and Engineering Center (REMRSEC) and the Golden Energy Computing Organization (GECO)
Comparison of quantum confinement effects between quantum wires and dots
Li, Jingbo; Wang, Lin-Wang
2004-03-30
Dimensionality is an important factor to govern the electronic structures of semiconductor nanocrystals. The quantum confinement energies in one-dimensional quantum wires and zero-dimensional quantum dots are quite different. Using large-scale first-principles calculations, we systematically study the electronic structures of semiconductor (including group IV, III-V, and II-VI) surface-passivated quantum wires and dots. The band-gap energies of quantum wires and dots have the same scaling with diameter for a given material. The ratio of band-gap-increases between quantum wires and dots is material-dependent, and slightly deviates from 0.586 predicted by effective-mass approximation. Highly linear polarization of photoluminescence in quantum wires is found. The degree of polarization decreases with the increasing temperature and size.
Electron-Hole Confinement Symmetry in Silicon Quantum Dots.
Mueller, Filipp; Konstantaras, Georgios; Spruijtenburg, Paul C; van der Wiel, Wilfred G; Zwanenburg, Floris A
2015-08-12
We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron-hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment. PMID:26134900
Si quantum dots in silicon nitride: Quantum confinement and defects
NASA Astrophysics Data System (ADS)
Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.
2015-12-01
Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from 2.3 eV to 1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (Si3N3.15) in which the maximum of light emission is observed.
Quantum confinement effects in CdSe quantum dots
Zorman, B.; Friesner, R.A.; Ramakrishna, M.V.
1995-05-11
The energies of the lowest excited state of hexagonal and zinc-blende CdSe spherical quantum dots are calculated using empirical pseudopotentials of the bulk semiconductor. The lowest excited state energies computed for hexagonal clusters are in reasonable agreement with recent experiments. We predict that zinc-blende and hexagonal dots have nearly the same lowest exciton energy shifts down to very small dot sizes. We have found that small changes in the pseudopotentials can turn the lowest energy transitions of small particles into indirect gaps. 29 refs., 6 figs.
Impurity binding energies in quantum dots with parabolic confinement
NASA Astrophysics Data System (ADS)
Abramov, Arnold
2015-03-01
We present an effective numerical procedure to calculate the binding energies and wave functions of the hydrogen-like impurity states in a quantum dot (QD) with parabolic confinement. The unknown wave function was expressed as an expansion over one-dimensional harmonic oscillator states, which describes the electron's movement along the defined z-axis. Green's function technique used to obtain the solution of Schredinger equation for electronic states in a transverse plane. Binding energy of impurity states is defined as poles of the wave function. The dependences of the binding energy on the position of an impurity, the size of the QD and the magnetic field strength are presented and discussed.
Jose, Meera Sakthivel, T. Chandran, Hrisheekesh T. Nivea, R. Gunasekaran, V.
2014-10-15
In this work, undoped and Ag-doped ZnS quantum dots were synthesized using various chemical methods. The products were characterized using X-ray diffraction (XRD), UV-visible spectroscopy and Photoluminescence spectroscopy. Our results revealed that the size of the as-prepared samples range from 1–6 nm in diameter and have a cubic zinc-blende structure. Also, we observed the emission of different wavelength of light from different sized quantum dots of the same material due to quantum confinement effect. The results will be presented in detail and ZnS can be a potential candidate for optical device development and applications.
NASA Astrophysics Data System (ADS)
Herzog, F.; Heedt, S.; Goerke, S.; Ibrahim, A.; Rupprecht, B.; Heyn, Ch; Hardtdegen, H.; Schäpers, Th; Wilde, M. A.; Grundler, D.
2016-02-01
We report on the magnetization of ensembles of etched quantum dots with a lateral diameter of 460 nm, which we prepared from InGaAs/InP heterostructures. The quantum dots exhibit 1/B-periodic de-Haas–van-Alphen-type oscillations in the magnetization M(B) for external magnetic fields B > 2 T, measured by torque magnetometry at 0.3 K. We compare the experimental data to model calculations assuming different confinement potentials and including ensemble broadening effects. The comparison shows that a hard wall potential with an edge depletion width of 100 nm explains the magnetic behavior. Beating patterns induced by Rashba spin–orbit interaction (SOI) as measured in unpatterned and nanopatterned InGaAs/InP heterostructures are not observed for the quantum dots. From our model we predict that signatures of SOI in the magnetization could be observed in larger dots in tilted magnetic fields.
Herzog, F; Heedt, S; Goerke, S; Ibrahim, A; Rupprecht, B; Heyn, Ch; Hardtdegen, H; Schpers, Th; Wilde, M A; Grundler, D
2016-02-01
We report on the magnetization of ensembles of etched quantum dots with a lateral diameter of 460?nm, which we prepared from InGaAs/InP heterostructures. The quantum dots exhibit 1/B-periodic de-Haas-van-Alphen-type oscillations in the magnetization M(B) for external magnetic fields B??>??2 T, measured by torque magnetometry at 0.3 K. We compare the experimental data to model calculations assuming different confinement potentials and including ensemble broadening effects. The comparison shows that a hard wall potential with an edge depletion width of 100?nm explains the magnetic behavior. Beating patterns induced by Rashba spin-orbit interaction (SOI) as measured in unpatterned and nanopatterned InGaAs/InP heterostructures are not observed for the quantum dots. From our model we predict that signatures of SOI in the magnetization could be observed in larger dots in tilted magnetic fields. PMID:26740509
The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.
Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide
2015-12-01
Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs. PMID:26523743
Shin, Dong Hee; Kim, Sung; Kim, Jong Min; Jang, Chan Wook; Kim, Ju Hwan; Lee, Kyeong Won; Kim, Jungkil; Oh, Si Duck; Lee, Dae Hun; Kang, Soo Seok; Kim, Chang Oh; Choi, Suk-Ho; Kim, Kyung Joong
2015-04-24
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism. PMID:25776865
Quantum confinement effects across two-dimensional planes in MoS{sub 2} quantum dots
Gan, Z. X.; Liu, L. Z.; Wu, H. Y.; Hao, Y. L.; Shan, Y.; Wu, X. L. E-mail: paul.chu@cityu.edu.hk; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk
2015-06-08
The low quantum yield (∼10{sup −5}) has restricted practical use of photoluminescence (PL) from MoS{sub 2} composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity. In this work, PL from 2 to 9 nm MoS{sub 2} quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution. PL from MoS{sub 2} QDs is also found to be sensitive to aggregation due to the size effect.
Quantum confinement effects across two-dimensional planes in MoS2 quantum dots
NASA Astrophysics Data System (ADS)
Gan, Z. X.; Liu, L. Z.; Wu, H. Y.; Hao, Y. L.; Shan, Y.; Wu, X. L.; Chu, Paul K.
2015-06-01
The low quantum yield (10-5) has restricted practical use of photoluminescence (PL) from MoS2 composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity. In this work, PL from 2 to 9 nm MoS2 quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution. PL from MoS2 QDs is also found to be sensitive to aggregation due to the size effect.
Kushwaha, Manvir S.
2014-12-15
Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level transitions are seen to be forbidden. The spherical quantum dots have an edge over the strictly two-dimensional quantum dots in that the additional (magnetic) quantum number makes the physics richer (but complex). A deeper grasp of the Coulomb blockade, quantum coherence, and entanglement can lead to a better insight into promising applications involving lasers, detectors, storage devices, and quantum computing.
Energy and binding energy of donor impurity in quantum dot with Gaussian confinement
NASA Astrophysics Data System (ADS)
Al-Hayek, I.; Sandouqa, A. S.
2015-09-01
Using the method of the shifted 1/N expansion, we investigate the problem of hydrogenic-like donor impurity, located at the center of a spherical semiconductor quantum dot. We have calculated the energy eigenvalues for both ground and first excited sates under the assumption of Gaussian confining potential. The binding energies for three dimensional (3D) and two dimensional (2D) quantum dots are calculated. We show their dependence on dimensionality, dot radius and potential confinement. Our present numerical results show quantitative and qualitative very good agreement with those results obtained by diagonalization, Numerov's integration, and Hartree-Fock methods.
Quantum confinement effects on charge-transfer between PbS quantum dots and 4-mercaptopyridine
Fu Xiaoqi; Pan Yi; Lombardi, John R.; Wang Xin
2011-01-14
We obtain the surface enhanced Raman spectra of 4-mercaptopyridine on lead sulfide (PbS) quantum dots as a function of nanoparticle size and excitation wavelength. The nanoparticle radii are selected to be less than the exciton Bohr radius of PbS, enabling the observation of quantum confinement effects on the spectrum. We utilize the variation of nontotally symmetric modes of both b{sub 1} and b{sub 2} symmetry as compared to the totally symmetric a{sub 1} modes to measure the degree of charge-transfer between the molecule and quantum dot. We find both size dependent and wavelength dependent resonances in the range of these measurements, and attribute them to charge-transfer resonances which are responsible for the Raman enhancement.
Engineering the hole confinement for CdTe-based quantum dot molecules
Kłopotowski, Ł. Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G.
2015-06-14
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Engineering the hole confinement for CdTe-based quantum dot molecules
NASA Astrophysics Data System (ADS)
K?opotowski, ?.; Wojnar, P.; Kret, S.; Parli?ska-Wojtan, M.; Fronc, K.; Wojtowicz, T.; Karczewski, G.
2015-06-01
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Ray, Mallar; Hossain, Syed Minhaz; Klie, Robert F; Banerjee, Koushik; Ghosh, Siddhartha
2010-12-17
We report the synthesis of luminescent, free standing silicon quantum dots by dry and wet etching of silicon and silicon oxide core/shell nanostructures, which are synthesized by controlled oxidation of mechanically milled silicon. Dry and wet etching performed with CF(4) plasma and aqueous HF, respectively, result in the removal of the thick oxide shell of the core/shell nanostructures and affect an additional step of size reduction. HF etch is capable of producing isolated, spherical quantum dots of silicon with dimensions ? 2 nm. However, the etching processes introduce unsaturated bonds at the surface of the nanocrystals which are subsequently passivated by oxygen on exposure to ambient atmosphere. The photoluminescence spectra of the colloidal suspensions of these nanocrystals are characterized by double peaks and excitation dependent shift of emission energy. Comparison of the structural, absorption and luminescence characteristics of the samples provides evidence for two competing transition processes--quantum confinement induced widened band gap related transitions and oxide associated interface state mediated transitions. The results enable us to experimentally distinguish between the contributions of the two different transition mechanisms, which has hitherto been a challenging problem. PMID:21098931
Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
NASA Astrophysics Data System (ADS)
Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.
2012-02-01
We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-?cm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ?41011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper inside the Ge/Si heterostructure in order to reduce the influence of surfaces and interfaces on transport properties of the structures.
Role of confinements on the melting of Wigner molecules in quantum dots
NASA Astrophysics Data System (ADS)
Bhattacharya, Dyuti; Filinov, Alexei V.; Ghosal, Amit; Bonitz, Michael
2016-03-01
We explore the stability of a Wigner molecule (WM) formed in confinements with different geometries emulating the role of disorder and analyze the melting (or crossover) of such a system. Building on a recent calculation [D. Bhattacharya, A. Ghosal, Eur. Phys. J. B 86, 499 (2013)] that discussed the effects of irregularities on the thermal crossover in classical systems, we expand our studies in the untested territory by including both the effects of quantum fluctuations and of disorder. Our results, using classical and quantum (path integral) Monte Carlo techniques, unfold complementary mechanisms that drive the quantum and thermal crossovers in a WM and show that the symmetry of the confinement plays no significant role in determining the quantum crossover scale n X . This is because the zero-point motion screens the boundary effects within short distances. The phase diagram as a function of thermal and quantum fluctuations determined from independent criteria is unique, and shows "melting" from the WM to both the classical and quantum "liquids". An intriguing signature of weakening liquidity with increasing temperature, T, is found in the extreme quantum regime. The crossover is associated with production of defects. However, these defects appear to play distinct roles in driving the quantum and thermal "melting". Our analyses carry serious implications for a variety of experiments on many-particle systems - semiconductor heterostructure quantum dots, trapped ions, nanoclusters, colloids and complex plasma.
NASA Astrophysics Data System (ADS)
Ganguly, Jayanta; Pal, Suvajit; Ghosh, Manas
2013-11-01
We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of additive Gaussian white noise. The noise and the dot confinement sources of electric and magnetic origin have been found to fabricate the said kinetics in a delicate way. In addition to this the dopant location also plays some prominent role. The present study sheds light on how the individual or combined variation of different confinement sources could design the excitation kinetics in presence of noise. The investigation reveals emergence of maximization and saturation in the excitation kinetics as a result of complex interplay between various parameters that affect the kinetics. The phase space plots are often invoked and they lend credence to the findings. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role.
NASA Astrophysics Data System (ADS)
Mishra, Rakesh K.; Vedeshwar, A. G.; Tandon, R. P.
2014-02-01
The diffusion-controlled growth of CdS quantum dots (QDs) dispersed in a silicate glass matrix was investigated. It was found that the size of CdS QDs can be controlled by either heat treatment at various temperatures for a fixed duration or varying times at a constant temperature. Pastel yellow colored glass samples were obtained due to the presence of CdS petite crystals. X-ray diffraction (XRD) was used for determining the average dot size which varied from 3.8 to 30 nm. The typical quantum confinement effect was clearly observed from the blue shift measured in the optical absorption edge with decreasing dot size in the absorption spectroscopy. The band gap of CdS QDs ranges from 2.41 to 2.82 eV. Measured photoluminescence (PL) at an excitation wavelength of 350 nm showed the red shift of emission wavelength with increasing thermal treatment time and temperature in agreement with the increasing dot sizes. The half-width of PL spectra seems to indicate qualitatively the size distribution of dots and is consistent with the treatment parameters.
Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators
Flatae, Assegid Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz
2014-01-01
We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 μJ.
Dvoyan, Karen G; Matinyan, Sergey G; Vlahovic, Branislav
2013-01-01
Confined states of a positronium (Ps) in the spherical and circular quantum dots (QDs) are theoretically investigated in two size quantization regimes: strong and weak. Two-band approximation of Kane's dispersion law and parabolic dispersion law of charge carriers are considered. It is shown that electron-positron pair instability is a consequence of dimensionality reduction, not of the size quantization. The binding energies for the Ps in circular and spherical QDs are calculated. The Ps formation dependence on the QD radius is studied. PMID:23826867
Effect of Phonon Confinement on Optical Phonon-Mediated Carrier Capture into CdSe/ZnS Quantum Dots
NASA Astrophysics Data System (ADS)
Vardanyan, K. A.; Vartanian, A. L.; Kirakosyan, A. A.
2015-08-01
Electron capture induced by carrier heating in the CdSe/ZnS spherical quantum dot-quantum well structure is studied theoretically. The capture rate has been calculated by taking into account the phonon confinement effect. Numerical results for the capture rate as a function of dot radius, lattice temperature, and electron density in the CdSe/ZnS/H2O quantum dot (QD) system are obtained and discussed. It has been shown that the capture rate of an electron from the barrier region to the quantum dot ground state due to the emission of confined or interface optical phonons exhibits strong resonances versus dot radius. Our results reveal that the capture time is larger than 1 ns across broad ranges of quantum dot radius. We have found the increase of the capture rate due to emission of LO1 as well as IO/SO phonons with increasing temperature. However, for structures with lower electron densities ( n ? 1016 cm-3), the monotonic behavior of the capture rate in case of IO/SO phonon interactions is broken and a local maximum in the temperature dependence appears. In contrast to the GaAs/AlAs spherical quantum dot-quantum well structure, the capture rate in CdSe/ZnS/H2O QDs is very strongly dependent on the electron density.
NASA Astrophysics Data System (ADS)
Tartakovskii, Alexander
2012-07-01
Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by Lithographic Techniques: III-V Semiconductors and Carbon: 15. Electrically controlling single spin coherence in semiconductor nanostructures Y. Dovzhenko, K. Wang, M. D. Schroer and J. R. Petta; 16. Theory of electron and nuclear spins in III-V semiconductor and carbon-based dots H. Ribeiro and G. Burkard; 17. Graphene quantum dots: transport experiments and local imaging S. Schnez, J. Guettinger, F. Molitor, C. Stampfer, M. Huefner, T. Ihn and K. Ensslin; Part VI. Single Dots for Future Telecommunications Applications: 18. Electrically operated entangled light sources based on quantum dots R. M. Stevenson, A. J. Bennett and A. J. Shields; 19. Deterministic single quantum dot cavities at telecommunication wavelengths D. Dalacu, K. Mnaymneh, J. Lapointe, G. C. Aers, P. J. Poole, R. L. Williams and S. Hughes; Index.
Anas, M. M.; Othman, A. P.; Gopir, G.
2014-09-03
Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ∼ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (T{sub d}) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (V{sub xc}) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional.
NASA Astrophysics Data System (ADS)
Anas, M. M.; Othman, A. P.; Gopir, G.
2014-09-01
Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ˜ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (Td) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (Vxc) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional.
Cosentino, S; Mio, A M; Barbagiovanni, E G; Raciti, R; Bahariqushchi, R; Miritello, M; Nicotra, G; Aydinli, A; Spinella, C; Terrasi, A; Mirabella, S
2015-07-14
Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. PMID:26077313
Exciton states and interband absorption of cylindrical quantum dot with Morse confining potential
NASA Astrophysics Data System (ADS)
Hayrapetyan, D. B.; Kazaryan, E. M.; Kotanjyan, T. V.; Tevosyan, H. Kh.
2015-02-01
In this paper the exciton and electron sates in cylindrical quantum dot with Morse potential made of GaAs are studied. For the regime of strong size quantization, energy spectrum with the parabolic approximation case are compared. For strong and weak size quantization regimes analytic expressions for the particle energy spectrum, absorption coefficient and dependencies of effective threshold frequencies of absorption on the geometrical parameters quantum dot are obtained. For the intermediate size quantization regime the problem solved in the framework of variation method. The selection rules corresponding to different transitions between quantum levels are found. The size dispersion distribution of growing quantum dots by the radius and height by two experimentally realizing distribution functions have been taken into account. Distribution functions of Gauss, Lifshits-Slezov have been considered.
NASA Astrophysics Data System (ADS)
Lopes-Oliveira, Vivaldo; Mazur, Yuriy I.; de Souza, Leonardo Dias; Maral, Lucas A. Bernardes; Wu, Jiang; Teodoro, Marcio Daldin; Malachias, Angelo; Dorogan, Vitaliy G.; Benamara, Mourad; Tarasov, Georgiy G.; Marega, Euclydes; Marques, Gilmar E.; Wang, Zhiming M.; Orlita, Milan; Salamo, Gregory J.; Lopez-Richard, Victor
2014-09-01
The optical analysis of multilayer structures formed from the topmost layer of InGaAs/GaAs quantum rings (QRs) grown on a vertically stacked and laterally aligned InGaAs/GaAs quantum dot (QD) superlattice has been performed to elucidate the nature of the contribution from each layer. These hybrid structures representing a coupled QR chain layer and the layers of self-assembled QD chains display strong optical anisotropy. Unusually strong oscillations are observed in the circularly polarized photoluminescence (PL) intensities under magnetic field for emissions in the spectral range of the QD structure and these oscillations occur simultaneously with weaker oscillations related to the Aharonov-Bohm interference that modulates the emissions from the QR top layer of the structure. The behavior seen in the magneto-PL spectrum is interpreted in terms of joint effects associated to strain, spatial, and magnetic field confinements on the valence band states forming the magnetoexciton ground state of this multilayered structure. The result can be ascribed to a magnetically induced dark exciton contribution where the heavy-hole (type II) state becomes localized outside, whereas light-hole (type I) as well as electron states remain inside the spatial confinement area of the QD.
NASA Astrophysics Data System (ADS)
Ning, J. Q.; Zheng, C. C.; Zhang, X. H.; Xu, S. J.
2015-10-01
ZnO quantum dots (QDs) embedded in an amorphous SiO2 matrix were examined in depth by using variable-temperature photoluminescence (PL) and optical reflectance spectroscopies. Compared with ZnO bulk crystals, ZnO quantum dots with an average size of 4 nm exhibit a strong quantum confinement effect, evidenced by a large blue shift in both PL and reflectance peaks of excitons. More interestingly, a remarkably reduced long-range Frhlich interaction was revealed in ZnO QDs. These fascinating effects may make ZnO QDs a very appealing system in the fields of optoelectronics and others.
Ning, J Q; Zheng, C C; Zhang, X H; Xu, S J
2015-10-15
ZnO quantum dots (QDs) embedded in an amorphous SiO2 matrix were examined in depth by using variable-temperature photoluminescence (PL) and optical reflectance spectroscopies. Compared with ZnO bulk crystals, ZnO quantum dots with an average size of 4 nm exhibit a strong quantum confinement effect, evidenced by a large blue shift in both PL and reflectance peaks of excitons. More interestingly, a remarkably reduced long-range Frhlich interaction was revealed in ZnO QDs. These fascinating effects may make ZnO QDs a very appealing system in the fields of optoelectronics and others. PMID:26439089
Photoinduced band filling in strongly confined colloidal PbS quantum dots
Ullrich, B.; Xi, H.; Wang, J. S.
2014-06-21
Increase in continuous wave laser excitation (6?W/cm{sup 2} to 120?W/cm{sup 2}) of colloidal PbS quantum dots in the strongly quantized regime (diameters 2.0?nm and 4.7?nm) deposited on semi-insulating GaAs and glass causes a clear blue shift (0.019?eV and 0.080?eV) of the emission spectra. Proof of the applicability of a dynamic three-dimensional band filling model is the significance of the presented results and demonstrates the effective electronic coupling in quantum dot arrays similar to superlattices. The work also reveals the influence of quantum dot sizes on photo-doping effects.
2013-01-01
Confined states of a positronium (Ps) in the spherical and circular quantum dots (QDs) are theoretically investigated in two size quantization regimes: strong and weak. Two-band approximation of Kane’s dispersion law and parabolic dispersion law of charge carriers are considered. It is shown that electron-positron pair instability is a consequence of dimensionality reduction, not of the size quantization. The binding energies for the Ps in circular and spherical QDs are calculated. The Ps formation dependence on the QD radius is studied. PMID:23826867
Photoluminescence intermittency of InGaAs/GaAs quantum dots confined in a planar microcavity.
Wang, X Y; Ma, W Q; Zhang, J Y; Salamo, G J; Xiao, Min; Shih, C K
2005-10-01
Photoluminescence intermittency, or "blinking", was observed in semiconductor InGaAs/GaAs quantum dots (QDs) inside a planar microcavity. Most of the blinking QDs were found around defect sites such as dislocation lines naturally formed in the GaAs barrier layers, and the carrier traps responsible for blinking had an excitation threshold of approximately 1.53 eV. The blinking properties of epitaxial QDs and colloidal nanocrystal QDs were also compared by performing laser intensity dependent measurements and statistics of the "on" and "off" time distributions. PMID:16218701
Biexciton Binding of Dirac fermions Confined in Colloidal Graphene Quantum Dots.
Sun, Cheng; Figge, Florian; Ozfidan, Isil; Korkusinski, Marek; Yan, Xin; Li, Liang-shi; Hawrylak, Pawel; McGuire, John A
2015-08-12
We present transient absorption measurements and microscopic theory of biexciton binding in triangular colloidal graphene quantum dots consisting of 168 sp(2)-hybridized C atoms. We observe optical transitions from the lowest orbitally dark singlet exciton states to states below the energy of an unbound dark+bright singlet-exciton pair. Through microscopic calculations of the low-energy exciton and biexciton states via tight-binding, Hartree-Fock, and configuration interaction methods, the spectra reveal a biexciton consisting primarily of a dark-bright singlet-pair bound by ?0.14 eV. PMID:26192636
Impurity with two electrons in the spherical quantum dot with Unite confinement potential
NASA Astrophysics Data System (ADS)
Baghdasaryan, D. A.; Ghaltaghchyan, H. Ts; Kazaryan, E. M.; Sarkisyan, H. A.
2016-01-01
Two-electron states in a spherical QD with the hydrogenic impurity located in the center and with a finite height confinement potential barrier are investigated. The effective mass mismatch have been taken into account. The dependence of ground state energy and Coulomb electron-electron interaction energy correction on the QD size is studied. The problem of the state exchange time control in QD is discussed, taking into account the spins of the electrons in the Russell-Saunders approximation. The effect of quantum emission has been shown.
Deng, Shaozhong
2010-01-01
By utilizing a novel three-layer dielectric model for the interface between a spherical quantum dot and the surrounding matrix, a robust numerical method for calculating the self-polarization energy of a spherical quantum dot with a finite confinement barrier is presented in this paper. The proposed numerical method can not only overcome the inherent mathematical divergence in the self-polarization energy which arises for the simplest and most widely used step-like model of the dielectric interface, but also completely eliminate the potential numerical divergence which may occur in the Bolcatto-Proettos formula [J. Phys.: Condens. Matter 13, 319334 (2001)], an approximation method commonly employed for more realistic three-layer dielectric models such as the linear and the cosine-like models frequently mentioned in the literature. Numerical experiments have demonstrated the convergence of the proposed numerical method as the number of the steps used to discretize the translation layer in a three-layer model goes to infinity, an important property that the Bolcatto-Proettos formula appears not necessarily to possess. PMID:20161693
Zhu, Nan; Zheng, Kaibo; Karki, Khadga J.; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E.; Pullerits, Tõnu; Chi, Qijin
2015-01-01
Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 109 s−1. Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications. PMID:25996307
Transport through graphene quantum dots
NASA Astrophysics Data System (ADS)
Güttinger, J.; Molitor, F.; Stampfer, C.; Schnez, S.; Jacobsen, A.; Dröscher, S.; Ihn, T.; Ensslin, K.
2012-12-01
We review transport experiments on graphene quantum dots and narrow graphene constrictions. In a quantum dot, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. The recently isolated two-dimensional carbon allotrope graphene is an interesting host to study quantum phenomena, due to its novel electronic properties and the expected weak interaction of the electron spin with the material. Graphene quantum dots are fabricated by etching mono-layer flakes into small islands (diameter 60-350 nm) with narrow connections to contacts (width 20-75 nm), serving as tunneling barriers for transport spectroscopy. Electron confinement in graphene quantum dots is observed by measuring Coulomb blockade and transport through excited states, a manifestation of quantum confinement. Measurements in a magnetic field perpendicular to the sample plane allowed to identify the regime with only a few charge carriers in the dot (electron-hole transition), and the crossover to the formation of the graphene specific zero-energy Landau level at high fields. After rotation of the sample into parallel magnetic field orientation, Zeeman spin splitting with a g-factor of g ≈ 2 is measured. The filling sequence of subsequent spin states is similar to what was found in GaAs and related to the non-negligible influence of exchange interactions among the electrons.
Meng, Xiuqing; Wu, Fengmin; Chen, Zhanghui; Li, Shu-Shen; Chen, Zhuo; Li, Jingbo E-mail: swei@nrel.gov; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ; Wu, Junqiao; Wei, Su-Huai E-mail: swei@nrel.gov
2013-12-16
We demonstrate in this work controllable synthesis of cubic InN nanocrystals through Mn doping. We show that the pristine nanocrystal has the wurtzite structure, but can be converted into the zinc-blende (ZB) structure when it is doped with Mn. Our first-principles calculations show that the phase transition is caused by the stronger p-d coupling between the host p valence state and the impurity d level in the ZB structure, which makes the hole generation in the ZB structure easier. Quantum confinement in the nanocrystals further enhanced this effect. This observation lays an important foundation for defects control of crystal phases.
NASA Astrophysics Data System (ADS)
Mandal, Arkajit; Sarkar, Sucharita; Ghosh, Arghya Pratim; Ghosh, Manas
2015-12-01
We make an extensive investigation of total optical absorption coefficient (TOAC) of impurity doped quantum dots (QDs) in presence and absence of Gaussian white noise. The TOAC profiles have been monitored against incident photon energy with special emphasis on the roles played by the electric field, magnetic field, and the dot confinement potential. Presence of impurity also influences the TOAC profile. In general, presence of noise causes enhancement of TOAC over that of noise-free condition. However, the interplay between the noise and the quantities like electric field, magnetic field, confinement potential and impurity potential bring about rich subtleties in the TOAC profiles. The said subtleties are often manifested by the alterations in TOAC peak intensity, extent of TOAC peak bleaching, and value of saturation intensity. The findings reveal some technologically relevant aspects of TOAC for the doped QD systems, specially in presence of noise.
Braun, T.; Baumann, V.; Iff, O.; Schneider, C.; Kamp, M.; Höfling, S.
2015-01-26
We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tamm-plasmon modes confined beneath gold disks in a hybrid metal/semiconductor structure. The enhancement of the emission intensity is confirmed by spatially resolved micro-photoluminescence area scans and temperature dependent measurements. Single photon emission from our coupled system is verified via second order autocorrelation measurements. We observe bright single quantum dot emission of up to ∼173 000 detected photons per second at a repetition rate of the excitation source of 82 MHz, and calculate an extraction efficiency of our device as high as 7%.
Kosemura, Daisuke Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi; Ohshita, Yoshio
2014-01-15
100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 56 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.
Vukmirovic, Nenad; Wang, Lin-Wang
2009-11-10
This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.
Carrier Spin Polarization in Quantum Confined System
NASA Astrophysics Data System (ADS)
Long, Gen
In this dissertation, systematic studies of magneto-photoluminescence of manganese-doped lead salt (Mn doped lead sulfide and lead selenide) quantum dots and core/shell quantum dots will be presented. It was observed that large carrier spin polarization can be obtained in manganese doped IV-VI lead salt quantum dots upon excitation by circularly polarized light; and a clear dependence of spin polarization on the sizes of quantum dots and thickness of core/shell quantum dots was observed as well. The quantum dots in this study were synthesized by solution-phase chemical method. The sizes of the quantum dots could be controlled by the growth temperature (50 to 150) and growth time (1min to 24hr). The doping concentrations in the compounds Pb1-xMn xS (or Pb1-xMnxSe) ranging from x = 0 to 8% can be adjusted by varying synthesis conditions as well. Studies on size dependence (from 3 to 10 nm), temperature dependence (from 7K to 50K), magnetic field dependence (from 0 to 7T), and laser power dependence (from 1mW to 20mW) of photoluminescence intensities and peak positions were systematically carried out. The spin-polarization, which was directly calculated from magneto-luminescence measurements, was studied as a function of quantum dot sizes, temperatures and magnetic fields. It was observed that, depending on the sizes and growth conditions (growth temperature and time), the spin polarization, as large as 40% at 7K in a 7T magnetic field, could be tuned in magnitude. Core/shell structured quantum dots with Mn2+ ions doped in the inner core or outer shell were also studied. The spin polarization was observed in core/shell system to decrease as thickness of the shell increases. We believe the wave function overlap between carriers and dopants can be tuned by quantum confinement and therefore the magnitude of exchange interactions can be tuned via varying the sizes of quantum dots or the shell thickness of core/shell quantum dots. There are a couple of measurements that showed inversion of spin polarization but the reproducibility is low. Further studies are needed to verify the possibility of reversing the sign of spin polarization through quantum confinement, i.e., varying the sizes of quantum dots or the shell thickness of core/shell quantum dots.
NASA Astrophysics Data System (ADS)
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-10-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
NASA Technical Reports Server (NTRS)
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-01-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
Quantum-dot supercrystals for future nanophotonics
Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.
2013-01-01
The study of supercrystals made of periodically arranged semiconductor quantum dots is essential for the advancement of emerging nanophotonics technologies. By combining the strong spatial confinement of elementary excitations inside quantum dots and exceptional design flexibility, quantum-dot supercrystals provide broad opportunities for engineering desired optical responses and developing superior light manipulation techniques on the nanoscale. Here we suggest tailoring the energy spectrum and wave functions of the supercrystals' collective excitations through the variation of different structural and material parameters. In particular, by calculating the excitonic spectra of quantum dots assembled in two-dimensional Bravais lattices we demonstrate a wide variety of spectrum transformation scenarios upon alterations in the quantum dot arrangement. This feature offers unprecedented control over the supercrystal's electromagnetic properties and enables the development of new nanophotonics materials and devices.
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
NASA Astrophysics Data System (ADS)
Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
2015-09-01
Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.
Quantum dots with single-atom precision.
Flsch, Stefan; Martnez-Blanco, Jess; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C
2014-07-01
Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons. PMID:24974937
Electron Spin Dynamics in Semiconductor Quantum Dots
Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.
2011-07-15
An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.
Designing quantum dots for solotronics.
Kobak, J; Smole?ski, T; Goryca, M; Papaj, M; Gietka, K; Bogucki, A; Koperski, M; Rousset, J-G; Suffczy?ski, J; Janik, E; Nawrocki, M; Golnik, A; Kossacki, P; Pacuski, W
2014-01-01
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946
Designing quantum dots for solotronics
Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.
2014-01-01
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946
NASA Astrophysics Data System (ADS)
Dongmei, Zheng; Zongchi, Wang; Boqi, Xiao
2015-03-01
Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field (BEF) in strained wurtzite ZnO/Mg0.25Zn0.75O quantum dots (QDs), the optical properties of ionized donor-bound excitons (D+, X) are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of (D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of (D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth. Project supported by the National Natural Science Foundation for Young Scientists of China (No. 11102100), the Program for New Century Excellent Talents in Fujian Province University (No. JA14285) and the Program for Young Top-Notch Innovative Talents of Fujian Province of China.
Quantum Dots: An Experiment for Physical or Materials Chemistry
ERIC Educational Resources Information Center
Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.
2005-01-01
An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.
Oraevsky, Anatolii N; Velichansky, Vladimir L; Scully, M O
1998-03-31
An analysis is made of the self-excitation condition for a laser in which the active medium is a 'quantum dot' and a whispering-gallery mode of a dielectric microsphere acts as the cavity. It is pointed out that the interaction of a quantum dot with an ensemble of degenerate or near-degenerate modes increases the laser excitation coefficient. A calculation is made of the dependence of the effective volume of a whispering-gallery mode on its index. It is shown that the field maximum of an E-type whispering-gallery mode lies on the surface of a sphere, whereas for an H-type mode this maximum is shifted along the radius into the sphere. Calculations suggest that it should be possible to construct a microlaser even on the basis of a single quantum dot. (lasers)
NASA Astrophysics Data System (ADS)
Kumar, D. Sanjeev; Boda, Aalu; Mukhopadhyay, Soma; Chatterjee, Ashok
2015-12-01
The ground state energy of a neutral hydrogenic donor impurity (D0) trapped in a three-dimensional GaAs quantum dot with Gaussian confinement is calculated in the presence of Rashba spin-orbit interaction. The effect of the spin-orbit interaction is incorporated by performing a unitary transformation and retaining terms up to quadratic in the spin-orbit interaction coefficient. For the resulting Hamiltonian, the Rayleigh-Ritz variational method is employed with a simple wave function within the framework of effective-mass envelope function theory to determine the ground state energy and the binding energy of the donor complex. The results show that the Rashba spin-orbit interaction reduces the total GS energy of the donor impurity.
Das Arulsamy, A.; Rider, A. E.; Cheng, Q. J.; Ostrikov, K.; Xu, S.
2009-05-01
A high level of control over quantum dot (QD) properties such as size and composition during fabrication is required to precisely tune the eventual electronic properties of the QD. Nanoscale synthesis efforts and theoretical studies of electronic properties are traditionally treated quite separately. In this paper, a combinatorial approach has been taken to relate the process synthesis parameters and the electron confinement properties of the QDs. First, hybrid numerical calculations with different influx parameters for Si{sub 1-x}C{sub x} QDs were carried out to simulate the changes in carbon content x and size. Second, the ionization energy theory was applied to understand the electronic properties of Si{sub 1-x}C{sub x} QDs. Third, stoichiometric (x=0.5) silicon carbide QDs were grown by means of inductively coupled plasma-assisted rf magnetron sputtering. Finally, the effect of QD size and elemental composition were then incorporated in the ionization energy theory to explain the evolution of the Si{sub 1-x}C{sub x} photoluminescence spectra. These results are important for the development of deterministic synthesis approaches of self-assembled nanoscale quantum confinement structures.
Pejova, Biljana
2014-05-01
Raman scattering in combination with optical spectroscopy and structural studies by X-ray diffraction was employed to investigate the phonon confinement and strain-induced effects in 3D assemblies of variable-size zincblende ZnSe quantum dots close packed in thin film form. Nanostructured thin films were synthesized by colloidal chemical approach, while tuning of the nanocrystal size was enabled by post-deposition thermal annealing treatment. In-depth insights into the factors governing the observed trends of the position and half-width of the 1LO band as a function of the average QD size were gained. The overall shifts in the position of 1LO band were found to result from an intricate compromise between the influence of phonon confinement and lattice strain-induced effects. Both contributions were quantitatively and exactly modeled. Accurate assignments of the bands due to surface optical (SO) modes as well as of the theoretically forbidden transverse optical (TO) modes were provided, on the basis of reliable physical models (such as the dielectric continuum model of Ruppin and Englman). The size-dependence of the ratio of intensities of the TO and LO modes was studied and discussed as well. Relaxation time characterizing the phonon decay processes in as-deposited samples was found to be approximately 0.38 ps, while upon post-deposition annealing already at 200 °C it increases to about 0.50 ps. Both of these values are, however, significantly smaller than those characteristic for a macrocrystalline ZnSe sample. - Graphical abstract: Optical phonons in nanostructured thin films composed by zincblende zinc selenide quantum dots in strong size-quantization regime: competition between phonon confinement and strain-related effects. - Highlights: • Phonon confinement vs. strain-induced effects in ZnSe 3D QD assemblies were studied. • Shifts of the 1LO band result from an intricate compromise between the two effects. • SO and theoretically forbidden TO modes were accurately assigned. • Phonon relaxation time in as-deposited and annealed samples is 0.38 ps and 0.50 ps. • Both values are significantly smaller than in macrocrystalline ZnSe sample.
Quantum dot device tunable from single to triple dot system
Rogge, M. C.; Haug, R. J.; Pierz, K.
2013-12-04
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
Quantum confined nanocrystalline silicon
NASA Astrophysics Data System (ADS)
Guan, Tianyuan; Kendrick, Chito; Theingi, San; Bagolini, Luigi; Riskey, Kory; Vitti, Lauren; Klafehn, Grant; Taylor, Craig; Lusk, Mark; Gorman, Brain; Collins, Reuben; Fields, Jeremy; Stradins, Pauls
2014-03-01
Quantum confined (QC) semiconductors have drawn much attention in photovoltaics due to their tunable optoelectronic properties and potential for efficiency improvements. Here, we report a study of nanocrystalline silicon (nc-Si:H), consisting of silicon nano-particles (SiNPs) embedded in hydrogenated amorphous silicon (a-Si:H) matrix. Films were grown by depositing the SiNPs and a-Si:H sequentially from separate plasma reactors in a common deposition chamber. Several characterizations were used to ensure the material had low defect density and that the SiNPs were highly crystalline and well within the QC regime. Optical properties of hybrid SiNP/a-Si:H films were explored using visible to near infrared photoluminescence (PL). At low temperature, PL revealed two primary emission features, one from conventional a-Si:H ~ 1.3 eV and a second peak which can be attributed to recombination in SiNPs. The energy of this peak is higher than the bulk c-Si bandgap (~ 1.2 eV), and with decreasing SiNP size, it increases to ~ 1.7 eV. This quantum confinement effect agrees with Density Functional Theory predictions. In addition, we also see that the PL peak for SiNPs surrounded by a-Si:H shifts to lower energy relative to the isolated SiNPs. This shift is also consistent with the modeling results which show that surrounding SiNPs with a-Si:H leads to a softening of the confinement barrier and a redshift in the optical gap.
Quantum Computing with Quantum Dots
NASA Astrophysics Data System (ADS)
Burkard, Guido; Loss, Daniel
1998-03-01
We report recent results on the spin dynamics of coupled quantum dots and their potential as quantum computer devices. Using the Heitler-London approach, we obtain the exchange coupling J(B,a) between the excess electrons of coupled dots.(D.P. DiVincenzo and D. Loss, Quantum Computation is Physical), to appear in Superlattices and Microstructures. Special Issue on the occasion of Rolf Landauer's 70th Birthday, ed. S. Datta. See cond- mat/9710259. The dependence of J on the magnetic field B and the interdot distance 2a is of great importance for controlling the coherent time-evolution of the two-spin system as required for quantum computation.(D. Loss and D.P. DiVincenzo, Phys. Rev. A, in press. See cond- mat/9701055.) Our result, which is in good agreement with a more refined LCAO calculation, is accessible to experimental tests via magnetic response measurements.
NASA Astrophysics Data System (ADS)
Taylor, Robert A.
2010-09-01
These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur Zrenner (Paderborn University, Germany) International Programme Committee: Alexander Eychmüller (TU Dresden, Germany) Jonathan Finley (TU Munich, Germany) Dan Gammon (NRL, Washington, USA) Alexander Govorov (Ohio University, USA) Neil Greenham (Cavendish Laboratory, UK) Vladimir Korenev (Ioffe Institute, Russia) Leo Kouwenhoven (TU Delft, Netherlands) Wolfgang Langbein (Cardiff University, UK) Xavier Marie (CNRS Toulouse, France) David Ritchie (Cambridge, UK) Andrew Sachrajda (IMS, Ottawa, Canada) Katerina Soulantica (University of Toulouse, France) Seigo Tarucha (University of Tokyo, Japan) Carlos Tejedor (UAM, Madrid, Spain) Euijoon Yoon (Seoul National University, Korea) Ulrike Woggon (Tu Berlin, Germany) Proceedings edited and compiled by Profesor Robert A Taylor, University of Oxford
NASA Astrophysics Data System (ADS)
Bianucci, Pablo
Modern communications technology has encouraged an intimate connection between Semiconductor Physics and Optics, and this connection shows best in the combination of electron-confining structures with light-confining structures. Semiconductor quantum dots are systems engineered to trap electrons in a mesoscopic scale (the are composed of ? 10000 atoms), resulting in a behavior resembling that of atoms, but much richer. Optical microresonators are engineered to confine light, increasing its intensity and enabling a much stronger interaction with matter. Their combination opens a myriad of new directions, both in fundamental Physics and in possible applications. This dissertation explores both semiconductor quantum dots and microresonators, through experimental work done with semiconductor quantum dots and microsphere resonators spanning the fields of Quantum Optics, Quantum Information and Photonics; from quantum algorithms to polarization converters. Quantum Optics leads the way, allowing us to understand how to manipulate and measure quantum dots with light and to elucidate the interactions between them and microresonators. In the Quantum Information area, we present a detailed study of the feasibility of excitons in quantum dots to perform quantum computations, including an experimental demonstration of the single-qubit Deutsch-Jozsa algorithm performedin a single semiconductor quantum dot. Our studies in Photonics involve applications of microsphere resonators, which we have learned to fabricate and characterize. We present an elaborate description of the experimental techniques needed to study microspheres, including studies and proof of concept experiments on both ultra-sensitive microsphere sensors and whispering gallery mode polarization converters.
Silicon quantum dots: surface matters.
Dohnalov, K; Gregorkiewicz, T; K?sov, K
2014-04-30
Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting. PMID:24713583
Probing relaxation times in graphene quantum dots
Volk, Christian; Neumann, Christoph; Kazarski, Sebastian; Fringes, Stefan; Engels, Stephan; Haupt, Federica; Mller, Andr; Stampfer, Christoph
2013-01-01
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dots have been extensively investigated with respect to their excitation spectrum, spin-filling sequence and electron-hole crossover. However, their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular concerning the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here we report pulsed-gate transient current spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design that allows to individually tune the tunnelling barriers down to the low megahertz regime, while monitoring their asymmetry. Measuring transient currents through electronic excited states, we estimate a lower bound for charge relaxation times on the order of 60100?ns. PMID:23612294
Quantum Dots as Cellular Probes
Alivisatos, A. Paul; Gu, Weiwei; Larabell, Carolyn
2004-09-16
Robust and bright light emitters, semiconductor nanocrystals[quantum dots (QDs)] have been adopted as a new class of fluorescent labels. Six years after the first experiments of their uses in biological applications, there have been dramatic improvements in understanding surface chemistry, biocompatibility, and targeting specificity. Many studies have shown the great potential of using quantum dots as new probes in vitro and in vivo. This review summarizes the recent advances of quantum dot usage at the cellular level, including immunolabeling, cell tracking, in situ hybridization, FRET, in vivo imaging, and other related technologies. Limitations and potential future uses of quantum dot probes are also discussed.
Quantum dots as cellular probes.
Alivisatos, A Paul; Gu, Weiwei; Larabell, Carolyn
2005-01-01
Robust and bright light emitters, semiconductor nanocrystals [quantum dots (QDs)] have been adopted as a new class of fluorescent labels. Six years after the first experiments of their uses in biological applications, there have been dramatic improvements in understanding surface chemistry, biocompatibility, and targeting specificity. Many studies have shown the great potential of using quantum dots as new probes in vitro and in vivo. This review summarizes the recent advances of quantum dot usage at the cellular level, including immunolabeling, cell tracking, in situ hybridization, FRET, in vivo imaging, and other related technologies. Limitations and potential future uses of quantum dot probes are also discussed. PMID:16004566
2014-01-01
We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation. PACS 42.55.Px; 78.55.Cr; 78.67.Hc PMID:24666965
Scanning Quantum Dot Microscopy
NASA Astrophysics Data System (ADS)
Wagner, Christian; Green, Matthew F. B.; Leinen, Philipp; Deilmann, Thorsten; Krüger, Peter; Rohlfing, Michael; Temirov, Ruslan; Tautz, F. Stefan
2015-07-01
We introduce a scanning probe technique that enables three-dimensional imaging of local electrostatic potential fields with subnanometer resolution. Registering single electron charging events of a molecular quantum dot attached to the tip of an atomic force microscope operated at 5 K, equipped with a qPlus tuning fork, we image the quadrupole field of a single molecule. To demonstrate quantitative measurements, we investigate the dipole field of a single metal adatom adsorbed on a metal surface. We show that because of its high sensitivity the technique can probe electrostatic potentials at large distances from their sources, which should allow for the imaging of samples with increased surface roughness.
Magnetic anisotropies of quantum dots
NASA Astrophysics Data System (ADS)
Vyborny, Karel; Han, J. E.; Oszwaldowski, Rafal; Zutic, Igor; Petukhov, A. G.
2012-02-01
Magnetic anisotropies in quantum dots (QDs) doped by magnetic ions are discussed in terms of two frameworks: anisotropic g-factors and magnetocrystalline anisotropy energy [1]. Two examples, related to zinc-blende p-doped materials, are given of how these frameworks are utilized: four-level Hamiltonian of a flat QD and a cuboid infinite-well QD containing a single hole. The latter model, despite being an idealization of a real QD, displays a rich phenomenology of anisotropies. We quantify the anisotropy constants for ZnSe and CdTe QDs, confirming that the Ising-like effective Hamiltonians apply to magnetic QDs [2]. Compared to bulk systems, confinement tuning offers a new way to control easy axes in magnetic QDs. [1] K. Vyborny et al., preprint (2011). [2] C. Le Gall et al., Phys. Rev. Lett. 107, 057401 (2011).
Silicon quantum dots: fine-tuning to maturity.
Morello, Andrea
2015-12-18
Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science. PMID:26584678
Silicon quantum dots: fine-tuning to maturity
NASA Astrophysics Data System (ADS)
Morello, Andrea
2015-12-01
Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.
NASA Astrophysics Data System (ADS)
Gun'ko, Y. K.; Moloney, M. M.; Gallagher, S.; Govan, J.; Hanley, C.
2010-04-01
Quantum dots (QDs) are fluorescent semiconductor (e.g. II-VI) nanocrystals, which have a strong characteristic spectral emission. This emission is tunable to a desired energy by selecting variable particle size, size distribution and composition of the nanocrystals. QDs have recently attracted enormous interest due to their unique photophysical properties and range of potential applications in photonics and biochemistry. The main aim of our work is develop new chiral quantum dots (QDs) and establish fundamental principles influencing their structure, properties and biosensing behaviour. Here we present the synthesis and characterisation of chiral CdSe semiconductor nanoparticles and their utilisation as new chiral biosensors. Penicillamine stabilised CdSe nanoparticles have shown both very strong and very broad luminescence spectra. Circular dichroism (CD) spectroscopy studies have revealed that the D- and Lpenicillamine stabilised CdSe QDs demonstrate circular dichroism and possess almost identical mirror images of CD signals. Studies of photoluminescence and CD spectra have shown that there is a clear relationship between defect emission and CD activity. We have also demonstrated that these new QDs can serve as fluorescent nanosensors for various chiral biomolecules including nucleic acids. These novel nanosensors can be potentially utilized for detection of various chiral biological and chemical species with the broad range of potential applications.
Efficient Quantum Dot-Quantum Dot and Quantum Dot-Dye Energy Transfer in Biotemplated Assemblies
Achermann, Marc; Jeong, Sohee; Balet, Laurent; Montano, Gabriel A.; Hollingsworth, Jennifer A.
2011-01-01
CdSe semiconductor nanocrystal quantum dots are assembled into nanowire-like arrays employing microtubule fibers as nanoscale molecular scaffolds. Spectrally and time-resolved energy-transfer analysis is used to assess the assembly of the nanoparticles into the hybrid inorganic-biomolecular structure. Specifically, we demonstrate that a comprehensive study of energy transfer between quantum-dot pairs on the biotemplate, and, alternatively, between quantum dots and molecular dyes embedded in the microtubule scaffold, comprises a powerful spectroscopic tool for evaluating the assembly process. In addition to revealing the extent to which assembly has occurred, the approach allows determination of particle-to-particle (and particle-to-dye) distances within the bio-mediated array. Significantly, the characterization is realized in situ, without need for further sample workup or risk of disturbing the solution-phase constructs. Furthermore, we find that the assemblies prepared in this way exhibit efficient quantum dot-quantum dot and quantum dot-dye energy transfer that affords faster energy-transfer rates compared to densely packed quantum dot arrays on planar substrates and small-molecule-mediated quantum dot/dye couples, respectively. PMID:21314178
Efficient quantum dot-quantum dot and quantum dot-dye energy transfer in biotemplated assemblies.
Achermann, Marc; Jeong, Sohee; Balet, Laurent; Montano, Gabriel A; Hollingsworth, Jennifer A
2011-03-22
CdSe semiconductor nanocrystal quantum dots are assembled into nanowire-like arrays employing microtubule fibers as nanoscale molecular "scaffolds." Spectrally and time-resolved energy-transfer analysis is used to assess the assembly of the nanoparticles into the hybrid inorganic biomolecular structure. Specifically, we demonstrate that a comprehensive study of energy transfer between quantum dot pairs on the biotemplate and, alternatively, between quantum dots and molecular dyes embedded in the microtubule scaffold comprises a powerful spectroscopic tool for evaluating the assembly process. In addition to revealing the extent to which assembly has occurred, the approach allows determination of particle-to-particle (and particle-to-dye) distances within the biomediated array. Significantly, the characterization is realized in situ, without need for further sample workup or risk of disturbing the solution-phase constructs. Furthermore, we find that the assemblies prepared in this way exhibit efficient quantum dot-quantum dot and quantum dot-dye energy transfer that affords faster energy-transfer rates compared to densely packed quantum dot arrays on planar substrates and to small-molecule-mediated quantum dot-dye couples, respectively. PMID:21314178
Isolated single quantum dot emitters in all-epitaxial microcavities.
Muller, Andreas; Shih, Chih-Kang; Ahn, Jaemin; Lu, Dingyuan; Deppe, Dennis G
2006-02-15
Data are presented on a fabrication approach that places an isolated single quantum dot at the center of a semiconductor microcavity. The microcavity is based on an all-epitaxial mesa-confined design that is mechanically robust and provides the thermal dissipation needed for a single photon source device technology. Microphotoluminescence is used to reveal single quantum dot emission with the essential optical properties of single quantum emitters. PMID:16496909
Gate-defined quantum dots in intrinsic silicon.
Angus, Susan J; Ferguson, Andrew J; Dzurak, Andrew S; Clark, Robert G
2007-07-01
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon. PMID:17567176
The pinning effect in quantum dots
Monisha, P. J.; Mukhopadhyay, Soma
2014-04-24
The pinning effect is studied in a Gaussian quantum dot using the improved Wigner-Brillouin perturbation theory (IWBPT) in the presence of electron-phonon interaction. The electron ground state plus one phonon state is degenerate with the electron in the first excited state. The electron-phonon interaction lifts the degeneracy and the first excited states get pinned to the ground state plus one phonon state as we increase the confinement frequency.
Resonance fluorescence and cavity quantum electrodynamics with quantum dots
NASA Astrophysics Data System (ADS)
Muller, Andreas
2007-05-01
Next-generation information technology is expected to rely on discrete two-state quantum systems that can deterministically emit single photons. Quantum dots are mesoscopic (10,000 atoms large) semiconductor islands grown in a host crystal of larger band-gap that make well-defined two-level quantum systems and are very attractive due to stability, record coherence times, and the possibility of integrating them into larger structures, such as optical microcavities. This work presents experimental progress towards understanding the coherent optical processes that occur in single quantum dots, particularly such phenomena that might be one day utilized for quantum communication applications. High resolution low temperature optical spectroscopy is used in conjunction with first order (amplitude) and second-order (intensity) correlation measurements of the emitted field. A novel technique is introduced that is capable of harvesting the fluorescence of single dots at the same frequency as the laser, previously impossible due to insurmountable scattering. This technique enables the observation, for the first time, of single quantum dot resonance fluorescence, in both the weak and strong excitation regimes, which forms the basis for deterministic generation of single photons. Guided by the rich theoretical description available from quantum optics with atoms we obtain insight into the complex dynamics of this driven system. Quantum dots confined to novel optical microcavities were further investigated using micro photoluminescence. An optical microcavity properly coupled to a two-level system can profoundly modify its emission characteristics via quantum electrodynamical effects, which are highly attractive for single photon sources. The all-epitaxial structures we probe are distinguished by a bulk morphology that overcomes the fragility problems of existing approaches, and provides high quality factors as well as small mode volumes. Lasing is obtained with larger structures. Additionally, isolation of individual dots is further realized in smaller cavities and the Purcell effect observed in time-resolved photon counting experiments.
Barroso, Margarida M.
2011-01-01
Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated transport. PMID:21378278
Numerical simulation of optical feedback on a quantum dot lasers
Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.
2012-02-15
We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.
Photoionization cross sections of atomic impurities in spherical quantum dots
NASA Astrophysics Data System (ADS)
Lin, Chih-Yuan; Ho, Y. K.
2012-02-01
Quantum dots with atomic impurities have attracted considerable attention due to not only its theoretical but also practical significance. The confinement potentials associated with the structure of quantum dots are often described by the rectangular potential well or harmonic oscillator potential. However, the non-parabolic shape at the center for the rectangular well and the infinite depth for the harmonic oscillator potential make the models unrealistic in practical applications. Recently, the finite oscillator and Gaussian potentials are proposed to mimic the spherical quantum dots, which are defined respectively as VFO(r)=-A(1+Br / Br √A . - √A )(-Br / Br √A . - √A ) and VG(r)=-C(-r^2 / -r^2 D^2 . - D^2) with the confining strengths A and C, and the radii of quantum dots 1/B and D. In this work, the method of complex-coordinate rotation in the finite-element discrete variable representation is implemented to study the photoionization of atomic impurities in spherical quantum dots. We explore the energy spectra and photoionization of atomic impurities influenced by the quantum confinement. The shifting of Cooper minima caused by the quantum confinement is observed.
NASA Astrophysics Data System (ADS)
Hackmann, J.; Glasenapp, Ph.; Greilich, A.; Bayer, M.; Anders, F. B.
2015-11-01
The real-time spin dynamics and the spin noise spectra are calculated for p and n -charged quantum dots within an anisotropic central spin model extended by additional nuclear electric quadrupolar interactions and augmented by experimental data. Using realistic estimates for the distribution of coupling constants including an anisotropy parameter, we show that the characteristic long time scale is of the same order for electron and hole spins strongly determined by the quadrupolar interactions even though the analytical form of the spin decay differs significantly consistent with our measurements. The low frequency part of the electron spin noise spectrum is approximately 1 /3 smaller than those for hole spins as a consequence of the spectral sum rule and the different spectral shapes. This is confirmed by our experimental spectra measured on both types of quantum dot ensembles in the low power limit of the probe laser.
Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation
NASA Astrophysics Data System (ADS)
Pan, Yi; Yang, Jianshu; Erwin, Steven C.; Kanisawa, Kiyoshi; Fölsch, Stefan
2015-08-01
Quantum-dot molecules were constructed on a semiconductor surface using atom manipulation by scanning tunneling microscopy (STM) at 5 K. The molecules consist of several coupled quantum dots, each of which comprises a chain of charged adatoms that electrostatically confines intrinsic surface-state electrons. The coupling takes place across tunnel barriers created reversibly using the STM tip. These barriers have an invariant, reproducible atomic structure and can be positioned—and repeatedly repositioned—to create a series of reconfigurable quantum-dot molecules with atomic precision.
Energy levels in self-assembled quantum arbitrarily shaped dots.
Tablero, C
2005-02-01
A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot. PMID:15740390
Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation.
Pan, Yi; Yang, Jianshu; Erwin, Steven C; Kanisawa, Kiyoshi; Flsch, Stefan
2015-08-14
Quantum-dot molecules were constructed on a semiconductor surface using atom manipulation by scanning tunneling microscopy (STM) at 5 K. The molecules consist of several coupled quantum dots, each of which comprises a chain of charged adatoms that electrostatically confines intrinsic surface-state electrons. The coupling takes place across tunnel barriers created reversibly using the STM tip. These barriers have an invariant, reproducible atomic structure and can be positioned-and repeatedly repositioned-to create a series of reconfigurable quantum-dot molecules with atomic precision. PMID:26317740
A Review of Quantum Confinement
NASA Astrophysics Data System (ADS)
Connerade, Jean-Patrick
2009-12-01
A succinct history of the Confined Atom problem is presented. The hydrogen atom confined to the centre of an impenetrable sphere counts amongst the exactly soluble problems of physics, alongside much more noted exact solutions such as Black Body Radiation and the free Hydrogen atom in absence of any radiation field. It shares with them the disadvantage of being an idealisation, while at the same time encapsulating in a simple way particular aspects of physical reality. The problem was first formulated by Sommerfeld and Welker [1]henceforth cited as SWin connection with the behaviour of atoms at very high pressures, and the solution was published on the occasion of Pauli's 60th birthday celebration. At the time, it seemed that there was not much other connection with physical reality beyond a few simple aspects connected to the properties of atoms in solids, for which more appropriate models were soon developed. Thus, confined atoms attracted little attention until the advent of the metallofullerene, which provided the first example of a confined atom with properties quite closely related to those originally considered by SW. Since then, the problem has received much more attention, and many more new features of quantum confinement, quantum compression, the quantum Faraday cage, electronic reorganisation, cavity resonances, etc have been described, which are relevant to real systems. Also, a number of other situations have been uncovered experimentally to which quantum confinement is relevant. Thus, studies of the confined atom are now more numerous, and have been extended both in terms of the models used and the systems to which they can be applied. Connections to thermodynamics are explored through the properties of a confined two-level atom adapted from Einstein's celebrated model, and issues of dynamical screening of electromagnetic radiation by the confining shell are discussed in connection with the Faraday cage produced by a confining conducting shell. The conclusions are shown to be relevant to a proposed `quantum computer'. The description of the actual geometry of C60, as opposed to a purely spherical approximation, leads to some qualification of the computed results.
Quantum Confined Semiconductors for High Efficiency Photovoltaics
NASA Astrophysics Data System (ADS)
Beard, Matthew
2014-03-01
Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photon-to-free energy conversion step. In this discussion, I will present the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (NCs confined in three dimensions) in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion. The solar cells are constructed using a low temperature solution based deposition of PbS or PbSe QDs as the absorber layer. Different chemical treatments of the QD layer are employed in order to obtain good electrical communication while maintaining the quantum-confined properties of the QDs. We have characterized the transport and carrier dynamics using a transient absorption, time-resolved THz, and temperature-dependent photoluminescence. I will discuss the interplay between carrier generation, recombination, and mobility within the QD layers. A unique aspect of our devices is that the QDs exhibit multiple exciton generation with an efficiency that is ~ 2 to 3 times greater than the parental bulk semiconductor.
NASA Astrophysics Data System (ADS)
Balaz, Milan
2015-03-01
Chiral optically active semiconductor quantum dots (chiral QDs) represent appealing building blocks for assembly of nanomaterials with modular structural, electronic and chiroptical properties. Chirality in QDs can originate from several distinct phenomena that can concurrently modulate the observed chiroptical and optical properties (e.g. chiral surface, orbital hybridization). We will use our experimental and theoretical data to elaborate on the origin of capping ligand induced chirality in achiral colloidal QDs. We will present a simple method to prepare chiral QDs by post-synthetic chiral ligand functionalization of achiral QDs. Importantly, capping ligands can be used not only to induce but also to control chiroptical activity of QDs. Enantiomers of chiral ligands induce mirror-image chirality in QDs, and chiroptical properties of QDs can be further modulated by the chemical structure of capping ligands as well as the size of QDs. This work was supported by by U.S. Department of Energy (Award DE-FG02-10ER46728), National Science Foundation (awards CBET-1403947 and DGE-0948027) and University of Wyoming.
NASA Astrophysics Data System (ADS)
Gerard, Valerie; Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-10-01
The main goal of our research is to develop new types of technologically important optically active quantum dot (QD) based materials, study their properties and explore their biological applications. For the first time chiral II-VI QDs have been prepared by us using microwave induced heating with the racemic (Rac), D- and L-enantiomeric forms of penicillamine as stabilisers. Circular dichroism (CD) studies of these QDs have shown that D- and L-penicillamine stabilised particles produced mirror image CD spectra, while the particles prepared with a Rac mixture showed only a weak signal. It was also demonstrated that these QDs show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. These QDs have demonstrated highly specific chiral recognition of various biological species including aminoacids. The utilisation of chiral stabilisers also allowed the preparation of new water soluble white emitting CdS nano-tetrapods, which demonstrated circular dichroism in the band-edge region of the spectrum. Biological testing of chiral CdS nanotetrapods displayed a chiral bias for an uptake of the D- penicillamine stabilised nano-tetrapods by cancer cells. It is expected that this research will open new horizons in the chemistry of chiral nanomaterials and their application in nanobiotechnology, medicine and optical chemo- and bio-sensing.
Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.
Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A
2011-11-01
Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots. PMID:21946709
CORRELATIONS IN CONFINED QUANTUM PLASMAS
DUFTY J W
2012-01-11
This is the final report for the project 'Correlations in Confined Quantum Plasmas', NSF-DOE Partnership Grant DE FG02 07ER54946, 8/1/2007 - 7/30/2010. The research was performed in collaboration with a group at Christian Albrechts University (CAU), Kiel, Germany. That collaboration, almost 15 years old, was formalized during the past four years under this NSF-DOE Partnership Grant to support graduate students at the two institutions and to facilitate frequent exchange visits. The research was focused on exploring the frontiers of charged particle physics evolving from new experimental access to unusual states associated with confinement. Particular attention was paid to combined effects of quantum mechanics and confinement. A suite of analytical and numerical tools tailored to the specific inquiry has been developed and employed
Growth and Characterization of Quantum Dots and Quantum Dots Devices
CEDERBERG, JEFFREY G.; BIEFELD, ROBERT M.; SCHNEIDER, H.C.; CHOW, WENG W.
2003-04-01
Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.
Holonomic quantum computation with electron spins in quantum dots
Golovach, Vitaly N.; Borhani, Massoud; Loss, Daniel
2010-02-15
With the help of the spin-orbit interaction, we propose a scheme to perform holonomic single-qubit gates on the electron spin confined to a quantum dot. The manipulation is done in the absence (or presence) of an applied magnetic field. By adiabatic changing the position of the confinement potential, one can rotate the spin state of the electron around the Bloch sphere in semiconductor heterostructures. The dynamics of the system is equivalent to employing an effective non-Abelian gauge potential whose structure depends on the type of the spin-orbit interaction. As an example, we find an analytic expression for the electron spin dynamics when the dot is moved around a circular path (with radius R) on the two dimensional electron gas (2DEG) and show that all single-qubit gates can be realized by tuning the radius and orientation of the circular paths. Moreover, using the Heisenberg exchange interaction, we demonstrate how one can generate two-qubit gates by bringing two quantum dots near each other, yielding a scalable scheme to perform quantum computing on arbitrary N qubits. This proposal shows a way of realizing holonomic quantum computers in solid-state systems.
A prototype silicon double quantum dot with dispersive microwave readout
Schmidt, A. R. Henry, E.; Namaan, O.; Siddiqi, I.; Lo, C. C.; Wang, Y.-T.; Bokor, J.; Yablonovitch, E.; Li, H.; Greenman, L.; Whaley, K. B.; Schenkel, T.
2014-07-28
We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.
Quantum dot quantum cascade infrared photodetector
Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Jun-Qi E-mail: fqliu@semi.ac.cn; Liu, Feng-Qi E-mail: fqliu@semi.ac.cn; Liu, Shu-Man; Wang, Zhan-Guo
2014-04-28
We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirped superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.
Suzuki, Nozomu; Wang, Yichun; Elvati, Paolo; Qu, Zhi-Bei; Kim, Kyoungwon; Jiang, Shuang; Baumeister, Elizabeth; Lee, Jaewook; Yeom, Bongjun; Bahng, Joong Hwan; Lee, Jaebeom; Violi, Angela; Kotov, Nicholas A
2016-02-23
Chiral nanostructures from metals and semiconductors attract wide interest as components for polarization-enabled optoelectronic devices. Similarly to other fields of nanotechnology, graphene-based materials can greatly enrich physical and chemical phenomena associated with optical and electronic properties of chiral nanostructures and facilitate their applications in biology as well as other areas. Here, we report that covalent attachment of l/d-cysteine moieties to the edges of graphene quantum dots (GQDs) leads to their helical buckling due to chiral interactions at the "crowded" edges. Circular dichroism (CD) spectra of the GQDs revealed bands at ca. 210-220 and 250-265 nm that changed their signs for different chirality of the cysteine edge ligands. The high-energy chiroptical peaks at 210-220 nm correspond to the hybridized molecular orbitals involving the chiral center of amino acids and atoms of graphene edges. Diverse experimental and modeling data, including density functional theory calculations of CD spectra with probabilistic distribution of GQD isomers, indicate that the band at 250-265 nm originates from the three-dimensional twisting of the graphene sheet and can be attributed to the chiral excitonic transitions. The positive and negative low-energy CD bands correspond to the left and right helicity of GQDs, respectively. Exposure of liver HepG2 cells to l/d-GQDs reveals their general biocompatibility and a noticeable difference in the toxicity of the stereoisomers. Molecular dynamics simulations demonstrated that d-GQDs have a stronger tendency to accumulate within the cellular membrane than l-GQDs. Emergence of nanoscale chirality in GQDs decorated with biomolecules is expected to be a general stereochemical phenomenon for flexible sheets of nanomaterials. PMID:26743467
Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots
Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.
2000-02-07
By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics.
Quantum Dots on Silicon Nanowires
NASA Astrophysics Data System (ADS)
Ryu, Hyuk Ju; Higgins, Jeremy; Huang, Pinray; Streifer, Jeremy; Hamers, Robert; Jin, Song; Eriksson, Mark
2007-03-01
Silicon nanowires have single-crystal structure, well-controlled doping, and can be integrated into devices using either directed assembly and dielectrophoresis or electron-beam lithography and lift-off. Such nanowires, with nanometer size in two dimensions, provide advantages for the fabrication of ultra-small silicon quantum dots with potentially long spin coherence times. We present methods for the fabrication of silicon nanowire-based single electron transistors, and we show results of both room temperature and low temperature transport measurements. The metal electrode structure and annealing process have been intensively investigated to obtain the necessary contact properties. Either metal/nanowire contacts or electrostatically depleted regions have been used for tunneling barriers for quantum dots. Coulomb blockade has been demonstrated successfully, showing 1.3 aF and 1.1 meV for the gate capacitance and the charging energy respectively. Studies of double quantum dots and spin-dependent effects are ongoing.
Quantum dots in graphene-like materials
NASA Astrophysics Data System (ADS)
Herath, Thakshila; Apalkov, Vadym
2015-03-01
We study numerically the electron states in silicene and germanene quantum dots within the effective low energy model of silicene and germanene. The quantum dots are realize through spatial variation of perpendicular electric field, i.e., bias voltage. The energy spectra of such quantum dots are obtained for different parameters of the dots, which are the size of the dot and the strength of external electric field. For cylindrically symmetric spatial profile of electric field, the electron states of the dot are characterized by z-component of the angular momentum. Due to strong spin-orbit interactions in such buckled graphene-like materials, the states in the quantum dots have unique spin texture, which is more pronounced for germanene quantum dots. The dependence of spin polarization of electron states in the quantum dots on the strength of electric field is also obtained.
NASA Astrophysics Data System (ADS)
Ono, K.; Tanamoto, T.; Ohguro, T.
2013-10-01
We describe a measurement method that enables the correct estimation of the charging energy of an unintentional quantum dot (QD) in the channel of a metal-oxide-semiconductor field-effect transistor (MOSFET). If the channel has a single dominant QD with a large charging energy and an array of stray QDs with much weaker charging, this method eliminates the additional voltage drops due to stray QDs by regarding the stray QDs as series resistors. We apply this method to a short-channel MOSFET and find that the charging energy of the dominant QD can indeed be smaller than the size of the Coulomb diamond.
Not Available
2011-02-01
Researchers at the National Renewable Energy Laboratory (NREL) have certified the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable quantum dot solar cell performance for an initial efficiency measurement along with good stability. The certified open-circuit voltage of the quantum dot cell is greater than that possible from bulk lead sulfide because of quantum confinement.
A colloidal quantum dot spectrometer.
Bao, Jie; Bawendi, Moungi G
2015-07-01
Spectroscopy is carried out in almost every field of science, whenever light interacts with matter. Although sophisticated instruments with impressive performance characteristics are available, much effort continues to be invested in the development of miniaturized, cheap and easy-to-use systems. Current microspectrometer designs mostly use interference filters and interferometric optics that limit their photon efficiency, resolution and spectral range. Here we show that many of these limitations can be overcome by replacing interferometric optics with a two-dimensional absorptive filter array composed of colloidal quantum dots. Instead of measuring different bands of a spectrum individually after introducing temporal or spatial separations with gratings or interference-based narrowband filters, a colloidal quantum dot spectrometer measures a light spectrum based on the wavelength multiplexing principle: multiple spectral bands are encoded and detected simultaneously with one filter and one detector, respectively, with the array format allowing the process to be efficiently repeated many times using different filters with different encoding so that sufficient information is obtained to enable computational reconstruction of the target spectrum. We illustrate the performance of such a quantum dot microspectrometer, made from 195 different types of quantum dots with absorption features that cover a spectral range of 300 nanometres, by measuring shifts in spectral peak positions as small as one nanometre. Given this performance, demonstrable avenues for further improvement, the ease with which quantum dots can be processed and integrated, and their numerous finely tuneable bandgaps that cover a broad spectral range, we expect that quantum dot microspectrometers will be useful in applications where minimizing size, weight, cost and complexity of the spectrometer are critical. PMID:26135449
A colloidal quantum dot spectrometer
NASA Astrophysics Data System (ADS)
Bao, Jie; Bawendi, Moungi G.
2015-07-01
Spectroscopy is carried out in almost every field of science, whenever light interacts with matter. Although sophisticated instruments with impressive performance characteristics are available, much effort continues to be invested in the development of miniaturized, cheap and easy-to-use systems. Current microspectrometer designs mostly use interference filters and interferometric optics that limit their photon efficiency, resolution and spectral range. Here we show that many of these limitations can be overcome by replacing interferometric optics with a two-dimensional absorptive filter array composed of colloidal quantum dots. Instead of measuring different bands of a spectrum individually after introducing temporal or spatial separations with gratings or interference-based narrowband filters, a colloidal quantum dot spectrometer measures a light spectrum based on the wavelength multiplexing principle: multiple spectral bands are encoded and detected simultaneously with one filter and one detector, respectively, with the array format allowing the process to be efficiently repeated many times using different filters with different encoding so that sufficient information is obtained to enable computational reconstruction of the target spectrum. We illustrate the performance of such a quantum dot microspectrometer, made from 195 different types of quantum dots with absorption features that cover a spectral range of 300 nanometres, by measuring shifts in spectral peak positions as small as one nanometre. Given this performance, demonstrable avenues for further improvement, the ease with which quantum dots can be processed and integrated, and their numerous finely tuneable bandgaps that cover a broad spectral range, we expect that quantum dot microspectrometers will be useful in applications where minimizing size, weight, cost and complexity of the spectrometer are critical.
Hydrophobin-Encapsulated Quantum Dots.
Taniguchi, Shohei; Sandiford, Lydia; Cooper, Maggie; Rosca, Elena V; Ahmad Khanbeigi, Raha; Fairclough, Simon M; Thanou, Maya; Dailey, Lea Ann; Wohlleben, Wendel; von Vacano, Bernhard; T M de Rosales, Rafael; Dobson, Peter J; Owen, Dylan M; Green, Mark
2016-02-24
The phase transfer of quantum dots to water is an important aspect of preparing nanomaterials that are suitable for biological applications, and although numerous reports describe ligand exchange, very few describe efficient ligand encapsulation techniques. In this report, we not only report a new method of phase transferring quantum dots (QDs) using an amphiphilic protein (hydrophobin) but also describe the advantages of using a biological molecule with available functional groups and their use in imaging cancer cells in vivo and other imaging applications. PMID:26824334
Corfdir, P. Van Hattem, B.; Phillips, R. T.; Fontana, Y.; Russo-Averchi, E.; Heiss, M.; Fontcuberta i Morral, A.
2014-12-01
We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga)As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on the orientation of the field with respect to the nanowire axis. The aspect ratio of the X wavefunction is quantified based on the anisotropy of the diamagnetic coefficient. For specific orientations of the magnetic field, it is possible to cancel the g-factor of the bright states of the X and the CX by means of an inversion of the sign of the hole's g-factor, which is promising for quantum information processing applications.
Excitonic fine structure splitting in type-II quantum dots
NASA Astrophysics Data System (ADS)
Křápek, V.; Klenovský, P.; Šikola, T.
2015-11-01
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.
Optical Fiber Sensing Using Quantum Dots
Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz
2007-01-01
Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms.
Nuclear spin physics in quantum dots: An optical investigation
NASA Astrophysics Data System (ADS)
Urbaszek, Bernhard; Marie, Xavier; Amand, Thierry; Krebs, Olivier; Voisin, Paul; Maletinsky, Patrick; Hgele, Alexander; Imamoglu, Atac
2013-01-01
The mesoscopic spin system formed by the 104-106 nuclear spins in a semiconductor quantum dot offers a unique setting for the study of many-body spin physics in the condensed matter. The dynamics of this system and its coupling to electron spins is fundamentally different from its bulk counterpart or the case of individual atoms due to increased fluctuations that result from reduced dimensions. In recent years, the interest in studying quantum-dot nuclear spin systems and their coupling to confined electron spins has been further fueled by its importance for possible quantum information processing applications. The fascinating nonlinear (quantum) dynamics of the coupled electron-nuclear spin system is universal in quantum dot optics and transport. In this article, experimental work performed over the last decade in studying this mesoscopic, coupled electron-nuclear spin system is reviewed. Here a special focus is on how optical addressing of electron spins can be exploited to manipulate and read out the quantum-dot nuclei. Particularly exciting recent developments in applying optical techniques to efficiently establish nonzero mean nuclear spin polarizations and using them to reduce intrinsic nuclear spin fluctuations are discussed. Both results critically influence the preservation of electron-spin coherence in quantum dots. This overall recently gained understanding of the quantum-dot nuclear spin system could enable exciting new research avenues such as experimental observations of spontaneous spin ordering or nonclassical behavior of the nuclear spin bath.
Gate-defined Quantum Confinement in Suspended Bilayer Graphene
NASA Astrophysics Data System (ADS)
Allen, Monica
2013-03-01
Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.
Density functional calculation of the structural and electronic properties of germanium quantum dots
Anas, M. M.; Gopir, G.
2015-04-24
We apply first principles density functional computational methods to study the structures, densities of states (DOS), and higher occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) gaps of selected free-standing Ge semiconductor quantum dots up to 1.8nm. Our calculations are performed using numerical atomic orbital approach where linear combination of atomic orbital was applied. The surfaces of the quantum dots was passivized by hydrogen atoms. We find that surface passivation does affect the electronic properties associated with the changes of surface state, electron localization, and the energy gaps of germanium nanocrystals as well as the confinement of electrons inside the quantum dots (QDs). Our study shows that the energy gaps of germanium quantum dots decreases with the increasing dot diameter. The size-dependent variations of the computed HOMO-LUMO gaps in our quantum dots model were found to be consistent with the effects of quantum confinement reported in others theoretical and experimental calculation.
Semiconductor double quantum dot micromaser.
Liu, Y-Y; Stehlik, J; Eichler, C; Gullans, M J; Taylor, J M; Petta, J R
2015-01-16
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold. PMID:25593187
Brightness-equalized quantum dots
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-01-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices. PMID:26437175
Brightness-equalized quantum dots
NASA Astrophysics Data System (ADS)
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-10-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices.
Brightness-equalized quantum dots.
Lim, Sung Jun; Zahid, Mohammad U; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S; Condeelis, John; Smith, Andrew M
2015-01-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices. PMID:26437175
Charge transfer magnetoexciton formation at vertically coupled quantum dots.
Gutirrez, Willian; Marin, Jairo H; Mikhailov, Ilia D
2012-01-01
A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots' dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted. PMID:23092373
Polaronic effects in a Gaussian quantum dot
NASA Astrophysics Data System (ADS)
Yanar, Sonay; Sevim, Ata; Boyacioglu, B.; Saglam, Mesude; Mukhopadhyaya, Soma; Chatterjee, Ashok
2008-03-01
The problem of an electron interacting with longitudinal-optical (LO) phonons is investigated in an N-dimensional quantum dot with symmetric Gaussian confinement in all directions using the Rayleigh-Schrödinger perturbation theory, a variant of the canonical transformation method of Lee-Low-Pines, and the sophisticated apparatus of the Feynman-Haken path-integral technique for the entire range of the coupling parameters and the results for N=2 and N=3 are obtained as special cases. It is shown that the polaronic effects are quite significant for small dots with deep confining potential well and the parabolic potential is only a poor approximation of the Gaussian confinement. The Feynman-Haken path-integral technique in general gives a good upper bound to the ground state energy for all values of the system parameters and therefore is used as a benchmark for comparison between different methods. It is shown that the perturbation theory yields for the ground state polaron self-energy a simple closed-form analytic expression containing only Gamma functions and in the weak-coupling regime it provides the lowest energy because of an efficient partitioning of the Gaussian potential and the subsequent use of a mean-field kind of treatment. The polarization potential, the polaron radius and the number of virtual phonons in the polaron cloud are obtained using the Lee-Low-Pines-Huybrechts method and their variations with respect to different parameters of the system are discussed.
Quantum Dots Based Rad-Hard Computing and Sensors
NASA Technical Reports Server (NTRS)
Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.
2001-01-01
Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.
Zero-energy states in graphene quantum dots and rings
Downing, C. A.; Stone, D. A.; Portnoi, M. E.
2011-10-15
We present exact analytical zero-energy solutions for a class of smooth-decaying potentials, showing that the full confinement of charge carriers in electrostatic potentials in graphene quantum dots and rings is indeed possible without recourse to magnetic fields. These exact solutions allow us to draw conclusions on the general requirements for the potential to support fully confined states, including a critical value of the potential strength and spatial extent.
Thermoelectric energy harvesting with quantum dots.
Sothmann, Bjrn; Snchez, Rafael; Jordan, Andrew N
2015-01-21
We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics. PMID:25549281
Thermoelectric energy harvesting with quantum dots
NASA Astrophysics Data System (ADS)
Sothmann, Bjrn; Snchez, Rafael; Jordan, Andrew N.
2015-01-01
We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics.
Semiconductor quantum dot-sensitized solar cells
Tian, Jianjun; Cao, Guozhong
2013-01-01
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178
Electron states in semiconductor quantum dots
Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.
2014-11-28
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Electron transport through double quantum dots
NASA Astrophysics Data System (ADS)
van der Wiel, W. G.; de Franceschi, S.; Elzerman, J. M.; Fujisawa, T.; Tarucha, S.; Kouwenhoven, L. P.
2002-12-01
Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of discrete energy levels in magnetic field is studied. The resolution allows one to resolve avoided crossings in the spectrum of a quantum dot. With microwave spectroscopy it is possible to probe the transition from ionic bonding (for weak interdot tunnel coupling) to covalent bonding (for strong interdot tunnel coupling) in a double dot artificial molecule. This review is motivated by the relevance of double quantum dot studies for realizing solid state quantum bits.
Multi-million atom electronic structure calculations for quantum dots
NASA Astrophysics Data System (ADS)
Usman, Muhammad
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in the field of nanoscience. The new and tunable optical and electrical properties of these artificial atoms have been proposed in a variety of different fields, for example in communication and computing systems, medical and quantum computing applications. Predictive and quantitative modeling and simulation of these structures can help to narrow down the vast design space to a range that is experimentally affordable and move this part of nanoscience to nano-Technology. Modeling of such quantum dots pose a formidable challenge to theoretical physicists because: (1) Strain originating from the lattice mismatch of the materials penetrates deep inside the buffer surrounding the quantum dots and require large scale (multi-million atom) simulations to correctly capture its effect on the electronic structure, (2) The interface roughness, the alloy randomness, and the atomistic granularity require the calculation of electronic structure at the atomistic scale. Most of the current or past theoretical calculations are based on continuum approach such as effective mass approximation or k.p modeling capturing either no or one of the above mentioned effects, thus missing some of the essential physics. The Objectives of this thesis are: (1) to model and simulate the experimental quantum dot topologies at the atomistic scale; (2) to theoretically explore the essential physics i.e. long range strain, linear and quadratic piezoelectricity, interband optical transition strengths, quantum confined stark shift, coherent coupling of electronic states in a quantum dot molecule etc.; (3) to assess the potential use of the quantum dots in real device implementation and to provide physical insight to the experimentalists. Full three dimensional strain and electronic structure simulations of quantum dot structures containing multi-million atoms are done using NEMO 3-D. Both single and vertically stacked quantum dot structures are analyzed in detail. The results show that the strain and the piezoelectricity significantly impact the electronic structure of these devices. This work shows that the InAs quantum dots when placed in the InGaAs quantum well red shifts the emission wavelength. Such InAs/GaAs-based optical devices can be used for optical-fiber based communication systems at longer wavelengths (1.3um -- 1.5um). Our atomistic simulations of InAs/InGaAs/GaAs quantum dots quantitatively match with the experiment and give the critical insight of the physics involved in these structures. A single quantum dot molecule is studied for coherent quantum coupling of electronic states under the influence of static electric field applied in the growth direction. Such nanostructures can be used in the implementation of quantum information technologies. A close quantitative match with the experimental optical measurements allowed us to get a physical insight into the complex physics of quantum tunnel couplings of electronic states as the device operation switches between atomic and molecular regimes. Another important aspect is to design the quantum dots for a desired isotropic polarization of the optical emissions. Both single and coupled quantum dots are studied for TE/TM ratio engineering. The atomistic study provides a detailed physical analysis of these computationally expensive large nanostructures and serves as a guide for the experimentalists for the design of the polarization independent devices for the optical communication systems.
Electron correlation in metal clusters, quantum dots and quantum rings
NASA Astrophysics Data System (ADS)
Manninen, M.; Reimann, S. M.
2009-05-01
This paper presents a few case studies of finite electron systems for which strong correlations play a dominant role. In simple metal clusters, the valence electrons determine the stability and shape of the clusters. The ionic skeleton of alkali metals is soft, and cluster geometries are often solely determined by electron correlations. In quantum dots and rings, the electrons may be confined by an external electrostatic potential formed by a gated heterostructure. In the low-density limit, the electrons may form the so-called Wigner molecules, for which the many-body quantum spectra reveal the classical vibration modes. High rotational states increase the tendency for the electrons to localize. At low angular momenta, the electrons may form a quantum Hall liquid with vortices. In this case, the vortices act as quasi-particles with long-range effective interactions that localize in a vortex molecule, in much analogy with the electron localization at strong rotation.
Quantitative multiplexed quantum dot immunohistochemistry
Sweeney, E.; Ward, T.H.; Gray, N.; Womack, C.; Jayson, G.; Hughes, A.; Dive, C.; Byers, R.
2008-09-19
Quantum dots are photostable fluorescent semiconductor nanocrystals possessing wide excitation and bright narrow, symmetrical, emission spectra. These characteristics have engendered considerable interest in their application in multiplex immunohistochemistry for biomarker quantification and co-localisation in clinical samples. Robust quantitation allows biomarker validation, and there is growing need for multiplex staining due to limited quantity of clinical samples. Most reported multiplexed quantum dot staining used sequential methods that are laborious and impractical in a high-throughput setting. Problems associated with sequential multiplex staining have been investigated and a method developed using QDs conjugated to biotinylated primary antibodies, enabling simultaneous multiplex staining with three antibodies. CD34, Cytokeratin 18 and cleaved Caspase 3 were triplexed in tonsillar tissue using an 8 h protocol, each localised to separate cellular compartments. This demonstrates utility of the method for biomarker measurement enabling rapid measurement of multiple co-localised biomarkers on single paraffin tissue sections, of importance for clinical trial studies.
Quantum Dot Light Emitting Diode
Keith Kahen
2008-07-31
The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.
Quantum Dot Light Emitting Diode
Kahen, Keith
2008-07-31
The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.
TOPICAL REVIEW: Quantum dots and spin qubits in graphene
NASA Astrophysics Data System (ADS)
Recher, Patrik; Trauzettel, Bjrn
2010-07-01
This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start with an overview of this young and fascinating field and then discuss gate-tunable quantum dots in detail. We calculate the bound states for three different quantum dot architectures where a bulk gap allows for confinement via electrostatic fields: (i) graphene nanoribbons with armchair boundaries, (ii) a disc in single-layer graphene, and (iii) a disc in bilayer graphene. In order for graphene quantum dots to be useful in the context of spin qubits, one needs to find reliable ways to break the valley degeneracy. This is achieved here, either by a specific termination of graphene in (i) or in (ii) and (iii) by a magnetic field, without the need of a specific boundary. We further discuss how to manipulate spin in these quantum dots and explain the mechanism of spin decoherence and relaxation caused by spin-orbit interaction in combination with electron-phonon coupling, and by hyperfine interaction with the nuclear-spin system.
Nano-laser on silicon quantum dots
NASA Astrophysics Data System (ADS)
Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li
2011-04-01
A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d < 3 nm) can make the localized states into band gap. The emission energy of nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.
Tunneling through a quantum dot in a quantum waveguide
NASA Astrophysics Data System (ADS)
Arsen'ev, A. A.
2010-07-01
The problem is considered of scattering in a system consisting of a quantum waveguide and a quantum dot weakly coupled to the waveguide. It is assumed that the quantum waveguide is described by the Pauli equations, and the Rashba spin-orbit interaction is taken into account. The possibility of tunneling through the quantum dot is proved.
NASA Astrophysics Data System (ADS)
Cichy, B.; Rich, R.; Olejniczak, A.; Gryczynski, Z.; Strek, W.
2016-02-01
Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex recombination kinetics in the QDs being still far from understood, limits their full utility. In this paper we report on a model describing the recombination pathways responsible for large deviations from the first-order decay law observed commonly in the ternary chalcogenides. The presented results were evaluated by means of individual AgInS2 QD spectroscopy aided by first principles calculations including the electronic structure and structural reconstruction of the QDs. Special attention was devoted to study the impact of the surface charge state on the excited state relaxation and effect of its passivation by Zn2+ ion alloying. Two different blinking mechanisms related to defect-assisted charge imbalance in the QD responsible for fast non-radiative relaxation of the excited states as well as surface recharging of the QD were found as the major causes of deviations from the first-order decay law. Careful optimization of the AgInS2 QDs would help to fabricate new red-shifted and tunable fluorescent bio-probes characterized by low-toxicity, high quantum yield, long luminescence lifetime, and time stability, leading to many novel in vitro and in vivo applications based on fluorescence lifetime imaging (FLIM) and time-gated detection.Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex recombination kinetics in the QDs being still far from understood, limits their full utility. In this paper we report on a model describing the recombination pathways responsible for large deviations from the first-order decay law observed commonly in the ternary chalcogenides. The presented results were evaluated by means of individual AgInS2 QD spectroscopy aided by first principles calculations including the electronic structure and structural reconstruction of the QDs. Special attention was devoted to study the impact of the surface charge state on the excited state relaxation and effect of its passivation by Zn2+ ion alloying. Two different blinking mechanisms related to defect-assisted charge imbalance in the QD responsible for fast non-radiative relaxation of the excited states as well as surface recharging of the QD were found as the major causes of deviations from the first-order decay law. Careful optimization of the AgInS2 QDs would help to fabricate new red-shifted and tunable fluorescent bio-probes characterized by low-toxicity, high quantum yield, long luminescence lifetime, and time stability, leading to many novel in vitro and in vivo applications based on fluorescence lifetime imaging (FLIM) and time-gated detection. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07992f
Optically active quantum dots in monolayer WSe2.
Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V; Lembke, Dominik S; Kis, Andras; Imamo?lu, A
2015-06-01
Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature. Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100?meV lower than that of two-dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host transition-metal dichalcogenide. The large ?1?meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement that is most probably induced by impurities or defects. The possibility of achieving electrical control in van der Waals heterostructures and to exploit the spin-valley degree of freedom renders transition-metal-dichalcogenide quantum dots interesting for quantum information processing. PMID:25938570
Optically active quantum dots in monolayer WSe2
NASA Astrophysics Data System (ADS)
Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V.; Lembke, Dominik S.; Kis, Andras; Imamo?lu, A.
2015-06-01
Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature. Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100?meV lower than that of two-dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host transition-metal dichalcogenide. The large 1?meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement that is most probably induced by impurities or defects. The possibility of achieving electrical control in van der Waals heterostructures and to exploit the spin-valley degree of freedom renders transition-metal-dichalcogenide quantum dots interesting for quantum information processing.
Synthetic Developments of Nontoxic Quantum Dots.
Das, Adita; Snee, Preston T
2016-03-01
Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. PMID:26548450
Quantum dot enabled high color gamut LCDs
NASA Astrophysics Data System (ADS)
Chen, Jian; Kan, Shihai; Lee, Ernie; Gensler, Steve; Hartlove, Jason
2015-03-01
Quantum dots are a new generation of phosphor material that have high photon conversion efficiency, narrow spectral line-widths and can be continuously tuned in their emission wavelengths. Since 2013, quantum dots have been adopted by the consumer electronics industry into LCDs to significantly increase their color performance. Compared to the OLED solution, quantum dot LCDs have higher energy efficiency, larger color gamut, longer lifetime, and are offered at a fraction of the cost of OLED panels. In this paper, we demonstrate that quantum-dot based LCDs can achieve more than 90% coverage of the ultra-wide color gamut, Rec. 2020, which is the new color standard for UHDTV.
Cichy, B; Rich, R; Olejniczak, A; Gryczynski, Z; Strek, W
2016-02-11
Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex recombination kinetics in the QDs being still far from understood, limits their full utility. In this paper we report on a model describing the recombination pathways responsible for large deviations from the first-order decay law observed commonly in the ternary chalcogenides. The presented results were evaluated by means of individual AgInS2 QD spectroscopy aided by first principles calculations including the electronic structure and structural reconstruction of the QDs. Special attention was devoted to study the impact of the surface charge state on the excited state relaxation and effect of its passivation by Zn(2+) ion alloying. Two different blinking mechanisms related to defect-assisted charge imbalance in the QD responsible for fast non-radiative relaxation of the excited states as well as surface recharging of the QD were found as the major causes of deviations from the first-order decay law. Careful optimization of the AgInS2 QDs would help to fabricate new red-shifted and tunable fluorescent bio-probes characterized by low-toxicity, high quantum yield, long luminescence lifetime, and time stability, leading to many novel in vitro and in vivo applications based on fluorescence lifetime imaging (FLIM) and time-gated detection. PMID:26866468
Plasmon assisted photonic crystal quantum dot sensors
NASA Astrophysics Data System (ADS)
Shenoi, R. V.; Ramirez, D. A.; Sharma, Y.; Attaluri, R. S.; Rosenberg, J.; Painter, O. J.; Krishna, S.
2007-09-01
We report Quantum Dot Infrared Detectors (QDIP) where light coupling to the self assembled quantum dots is achieved through plasmons occurring at the metal-semiconductor interface. The detector structure consists of an asymmetric InAs/InGaAs/GaAs dots-in-a-well (DWELL) structure and a thick layer of GaAs sandwiched between two highly doped n-GaAs contact layers, grown on a semi-insulating GaAs substrate. The aperture of the detector is covered with a thin metallic layer which along with the dielectric layer confines light in the vertical direction. Sub-wavelength two-dimensional periodic patterns etched in the metallic layer covering the aperture of the detector and the active region creates a micro-cavity that concentrate light in the active region leading to intersubband transitions between states in the dot and the ones in the well. The sidewalls of the detector were also covered with metal to ensure that there is no leakage of light into the active region other than through the metal covered aperture. An enhanced spectral response when compared to the normal DWELL detector is obtained despite the absence of any aperture in the detector. The spectral response measurements show that the Long Wave InfraRed (LWIR) region is enhanced when compared to the Mid Wave InfraRed (MWIR) region. This may be due to coupling of light into the active region by plasmons that are excited at the metal-semiconductor interface. The patterned metal-dielectric layers act as an optical resonator thereby enhancing the coupling efficiency of light into the active region at the specified frequency. The concept of plasmon-assisted coupling is in principle technology agnostic and can be easily integrated into present day infrared sensors.
Dephasing in Quantum Dots: Quadratic Coupling to Acoustic Phonons
NASA Astrophysics Data System (ADS)
Muljarov, E. A.; Zimmermann, R.
2004-11-01
A microscopic theory of optical transitions in quantum dots with a carrier-phonon interaction is developed. Virtual transitions into higher confined states with acoustic phonon assistance add a quadratic phonon coupling to the standard linear one, thus extending the independent boson model. Summing infinitely many diagrams in the cumulant, a numerically exact solution for the interband polarization is found. Its full time dependence and the absorption line shape of the quantum dot are calculated. It is the quadratic interaction which gives rise to a temperature-dependent broadening of the zero-phonon line, calculated here for the first time in a consistent scheme.
Chiral quantum dot based materials
NASA Astrophysics Data System (ADS)
Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii
2014-05-01
Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.
Quantum Transition of an Electron in an Asymmetric Quantum Dot
NASA Astrophysics Data System (ADS)
Li, Zhi-Xin
2015-10-01
We have studied the transition probability of an electron in an asymmetric quantum dot (AQD). The energy levels and the wave functions of the ground and the first excited states of an electron in a static electric field have been calculated by using a variational method of Pekar type. And the eigen energies of the ground and the first excited states in this system may be used as a two-level qubit. We assume the electron to be in system's ground state in the initial time, the electron transits from the ground state to the excited state in presence of the external electric field F along the z axis. Numerical calculation results show that the transition probability of the electron increases with increasing the transverse confinement length and the longitudinal confinement length of AQD and decreases with increasing the electron-phonon coupling strength. The transition probability of the electron is an increasing function of the electric field strength.
Photoluminescence of quantum-confined semiconductor structures
NASA Astrophysics Data System (ADS)
Mosor, Sorin
Different aspects of the photoluminescence from semiconductor quantum-confined structures are studied in this dissertation, for a better understanding of fundamental physics of semiconductors. The precursor of any photoluminescence study is the characterization of the linear optical properties of the semiconductor structures. High resolution absorption measurements were performed in order to study the interplay of disorder and acoustic phonon scattering in a quantum well. Also, reflectivity measurements, together with a fitting procedure based on the transfer matrix formalism, are used to determine the thickness of samples. Excitons are atom-like quasi-particles, formed from a bound electron-hole pair. They follow a Bose-Einstein statistic, so in principle it is possible to achieve an excitonic Bose-Einstein condensate. Time resolved photoluminescence measurements were performed over an extensive range of lattice temperatures and carrier concentrations, in order to determine the fraction of excitons formed from the electron-hole plasma in a quantum well, after non-resonant excitation. The experimental spectra were compared to a pure plasma calculation first, then excitons were taken into account-The highest fraction of formed excitons is found for low temperatures and intermediate carrier densities. This fraction is found to be very small, and this has clear implications on the excitonic Bose-Einstein condensation studies. The photoluminescence emitted left and right from a quantum well is interfered in a modified Mach-Zender interferometer. It is shown that the light emitted on the two paths will interfere for a V-shape geometry and will not for any other paths. A structure formed by placing a quantum well in a field antinode of a resonant planar microcavity exhibits normal mode coupling: splitting of the resonance spectral line. For the case of resonant excitation, a third peak appears at higher excitation levels. The coherence properties of the photoluminescence from a normal-mode-coupling microcavity are studied using another version of the Mach-Zender interferometer. The degree of coherence measured in this way depends greatly on the pump wavelength and intensity, ranging from zero to 0.8. However, direct observation of the emission speckle shows significant coherence in all cases. The difference is explained by the different methods used to evaluate the coherence. The strong coupling between a quantum dot and a photonic crystal nanocavity is investigated by observation of photoluminescence. A new method of tunning the cavity wavelength by deposition of a thin film of solid Xenon on all the surfaces of the sample is presented. The method allows the scanning of the cavity wavelength with about 5 nm without a decrease in the quality factor and without changing the temperature. Finally, an extensive study of the quality factors of quantum dot photonic crystal nanocavities is presented. The role of the quantum dot ensemble absorption is investigated. At higher excitation levels, lasing is observed and discussed.
Calculation of hyperfine interaction in spherical quantum dot
NASA Astrophysics Data System (ADS)
Yakar, Yusuf; ak?r, Bekir; zmen, Ayhan
2015-10-01
In this study, we have calculated the unperturbed wavefunctions and energy eigenvalues of the ground and excited states of a spherical quantum dot, GaAs/AlxGa1-xAs, by using quantum genetic algorithm and Hartree-Fock Roothaan method. Hyperfine coupling constant and hyperfine energy of 1s, 2p, 3d and 4f levels are carried out as a function of dot radius. The results show that the hyperfine constant and hyperfine energy varies rapidly in the strong and medium confining regions as dot radius decreases. It is worth pointing out that dot radius, impurity charge and angular momentum have a strong influence on the hyperfine energy. It is also found that hyperfine energy and hyperfine splitting vary with aluminium concentration ratio x.
Vertically stacked quantum dot pairs fabricated by nanohole filling
NASA Astrophysics Data System (ADS)
Sonnenberg, D.; Kster, A.; Graf, A.; Heyn, Ch; Hansen, W.
2014-05-01
Strain-free, vertically coupled GaAs quantum dots (QDs) with an ultra-low density below 1\\times {{10}^{7}} \\text{c}{{\\text{m}}^{-2}} are fabricated by filling of self-assembled nanoholes with a GaAs/AlGaAs/GaAs layer sequence. The sizes of the two QDs, forming a QD pair (QDP), as well as the AlGaAs tunnel-barrier between the dots are tuned independently. We present atomic force microscopy studies of the QDP formation steps. We have performed photoluminescence studies of single QDPs with varied dot size and tunnel-barrier thickness. The data indicate non-resonant tunnelling between the dots. Furthermore, we apply the quantum confined Stark effect to tune the photoluminescence energy by up to 25 meV.
Vertically stacked quantum dot pairs fabricated by nanohole filling.
Sonnenberg, D; Kster, A; Graf, A; Heyn, Ch; Hansen, W
2014-05-30
Strain-free, vertically coupled GaAs quantum dots (QDs) with an ultra-low density below 1 10(7) cm(-2) are fabricated by filling of self-assembled nanoholes with a GaAs/AlGaAs/GaAs layer sequence. The sizes of the two QDs, forming a QD pair (QDP), as well as the AlGaAs tunnel-barrier between the dots are tuned independently. We present atomic force microscopy studies of the QDP formation steps. We have performed photoluminescence studies of single QDPs with varied dot size and tunnel-barrier thickness. The data indicate non-resonant tunnelling between the dots. Furthermore, we apply the quantum confined Stark effect to tune the photoluminescence energy by up to 25 meV. PMID:24784358
Computation of hyperfine energies of hydrogen, deuterium and tritium quantum dots
NASA Astrophysics Data System (ADS)
Çakır, Bekir; Özmen, Ayhan; Yakar, Yusuf
2016-01-01
The hyperfine energies and hyperfine constants of the ground and excited states of hydrogen, deuterium and tritium quantum dots(QDs) are calculated. Quantum genetic algorithm (QGA) and Hartree-Fock-Roothaan (HFR) methods are employed to calculate the unperturbed wave functions and energy eigenvalues. The results show that in the medium and strong confinement regions the hyperfine energy and hyperfine constant are strongly affected by dot radius, impurity charge, electron spin orientation, impurity spin and impurity magnetic moment. Besides, in all dot radii, the hyperfine splitting and hyperfine constant of the confined hydrogen and tritium atoms are approximately equivalent to each other and they are greater than the confined deuterium atom.
Photoluminescence of a quantum-dot molecule
Kruchinin, Stanislav Yu.; Rukhlenko, Ivan D.; Baimuratov, Anvar S.; Leonov, Mikhail Yu.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-01-07
The coherent coupling of quantum dots is a sensitive indicator of the energy and phase relaxation processes taking place in the nanostructure components. We formulate a theory of low-temperature, stationary photoluminescence from a quantum-dot molecule composed of two spherical quantum dots whose electronic subsystems are resonantly coupled via the Coulomb interaction. We show that the coupling leads to the hybridization of the first excited states of the quantum dots, manifesting itself as a pair of photoluminescence peaks with intensities and spectral positions strongly dependent on the geometric, material, and relaxation parameters of the quantum-dot molecule. These parameters are explicitly contained in the analytical expression for the photoluminescence differential cross section derived in the paper. The developed theory and expression obtained are essential in interpreting and analyzing spectroscopic data on the secondary emission of coherently coupled quantum systems.
Charge transfer magnetoexciton formation at vertically coupled quantum dots
2012-01-01
A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots’ dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted. PMID:23092373
Charge state hysteresis in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Yang, C. H.; Rossi, A.; Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.
2014-11-01
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
Charge state hysteresis in semiconductor quantum dots
Yang, C. H.; Rossi, A. Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.
2014-11-03
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
Coherent photonic coupling of semiconductor quantum dots.
Reitzenstein, S; Lffler, A; Hofmann, C; Kubanek, A; Kamp, M; Reithmaier, J P; Forchel, A; Kulakovskii, V D; Keldysh, L V; Ponomarev, I V; Reinecke, T L
2006-06-01
We report a new type of coupling between quantum dot excitons mediated by the strong single-photon field in a high-finesse micropillar cavity. Coherent exciton coupling is observed for two dots with energy differences of the order of the exciton-photon coupling. The coherent coupling mode is characterized by an anticrossing with a particularly large line splitting of 250 microeV. Because of the different dispersion relations with temperature, the simultaneous photonic coupling of quantum dot excitons can be easily distinguished from cases of sequential strong coupling of two quantum dots. PMID:16688279
Coherent photonic coupling of semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Reitzenstein, S.; Lffler, A.; Hofmann, C.; Kubanek, A.; Kamp, M.; Reithmaier, J. P.; Forchel, A.; Kulakovskii, V. D.; Keldysh, L. V.; Ponomarev, I. V.; Reinecke, T. L.
2006-06-01
We report a new type of coupling between quantum dot excitons mediated by the strong single-photon field in a high-finesse micropillar cavity. Coherent exciton coupling is observed for two dots with energy differences of the order of the exciton-photon coupling. The coherent coupling mode is characterized by an anticrossing with a particularly large line splitting of 250 ?eV. Because of the different dispersion relations with temperature, the simultaneous photonic coupling of quantum dot excitons can be easily distinguished from cases of sequential strong coupling of two quantum dots.
Imaging a single-electron quantum dot.
Fallahi, Parisa; Bleszynski, Ania C; Westervelt, Robert M; Huang, Jian; Walls, Jamie D; Heller, Eric J; Hanson, Micah; Gossard, Arthur C
2005-02-01
Images of a single-electron quantum dot were obtained in the Coulomb blockade regime at liquid He temperatures using a cooled scanning probe microscope (SPM). The charged SPM tip shifts the lowest energy level in the dot and creates a ring in the image corresponding to a peak in the Coulomb-blockade conductance. Fits to the line shape of the ring determine the tip-induced shift of the energy of the electron state in the dot. SPM manipulation of electrons in quantum dots promises to be useful in understanding, building, and manipulating circuits for quantum information processing. PMID:15794600
STED nanoscopy with fluorescent quantum dots
Hanne, Janina; Falk, Henning J.; Grlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.
2015-01-01
The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775?nm STED laser light. A resolution of presently ?50?nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging. PMID:25980788
Chirality transfer from graphene quantum dots.
Vzquez-Nakagawa, M; Rodrguez-Prez, L; Herranz, M A; Martn, N
2015-12-24
Chiral graphene quantum dots were prepared by acidic exfoliation and oxidation of graphite, dialysis, and esterification with enantiomerically pure (R) or (S)-2-phenyl-1-propanol. Circular dichroism studies support the formation of supramolecular aggregates with pyrene molecules, where a transfer of chirality occurs from the chiral graphene quantum dots to the pyrene. PMID:26606894
STED nanoscopy with fluorescent quantum dots
NASA Astrophysics Data System (ADS)
Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.
2015-05-01
The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ~50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.
Thick-shell nanocrystal quantum dots
Hollingsworth, Jennifer A. (Los Alamos, NM); Chen, Yongfen (Eugene, OR); Klimov, Victor I. (Los Alamos, NM); Htoon, Han (Los Alamos, NM); Vela, Javier (Los Alamos, NM)
2011-05-03
Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
Red-Emitting Semiconductor Quantum Dot Lasers
Fafard; Hinzer; Raymond; Dion; McCaffrey; Feng; Charbonneau
1996-11-22
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at approximately 707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of approximately 8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs. PMID:8910269
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra; Chang, Jerry; Kovtun, Oleg; McBride, James; Tomlinson, Ian
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.
NASA Technical Reports Server (NTRS)
Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.
2000-01-01
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
NASA Astrophysics Data System (ADS)
Chwiej, T.; Kutorasiński, K.
2010-04-01
We study transfer of a single-electron through a quantum ring capacitively coupled to the charged quantum dot placed in its center. For this purpose we solve the time-dependent Schrödinger equation for the pair of particles: the electron traveling through the ring and the other carrier confined within the quantum dot. The correlation effects due to the interaction between the charge carriers are described in a numerically exact manner. We find that the amplitude of Aharonov-Bohm oscillations of the transfer probability is significantly affected by the presence of the dot-confined carrier. In particular the Coulomb correlation leads to inelastic scattering. When the inelastic scattering is strong the transmission of electron through the ring is not completely blocked for (n+1/2) magnetic flux quanta.
Decoherence dynamics of two charge qubits in vertically coupled quantum dots
Ben Chouikha, W.; Bennaceur, R.; Jaziri, S.
2007-12-15
The decoherence dynamics of two charge qubits in a double quantum dot is investigated theoretically. We consider the quantum dynamics of two interacting electrons in a vertically coupled quantum dot driven by an external electric field. We derive the equations of motion for the density matrix, in which the presence of an electron confined in the double dot represents one qubit. A Markovian approach to the dynamical evolution of the reduced density matrix is adopted. We evaluate the concurrence of two qubits in order to study the effect of acoustic phonons on the entanglement. We also show that the disentanglement effect depends on the double dot parameters and increases with the temperature.
Substitutional impurity in the graphene quantum dots
NASA Astrophysics Data System (ADS)
Siera?ski, K.; Szatkowski, J.
2015-09-01
The process of formation of the localized defect states due to substitutional impurity in sp2-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp2 orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H18C51X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) ?p energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.
Surface Induced Magnetism in Quantum Dots
Meulenberg, R W; Lee, J I
2009-08-20
The study of nanometer sized semiconductor crystallites, also known as quantum dots (QDs), has seen rapid advancements in recent years in scientific disciplines ranging from chemistry, physics, biology, materials science, and engineering. QD materials of CdSe, ZnSe, InP, as well as many others, can be prepared in the size range of 1-10 nm producing uniform, nearly monodisperse materials that are typically coated with organic molecules [1-3]. The strength of charge carrier confinement, which dictates the size-dependent properties, in these QDs depends on the nature of the material and can be correlated to the Bohr radius for the system of interest. For instance, the Bohr radius for CdSe is {approx} 5 nm, while in the more covalent structure of InP, the Bohr radius approaches {approx} 10 nm. The study of CdSe QDs has been particularly extensive during the last decade because they exhibit unique and tunable optical properties and are readily synthesized with high-crystallinity and narrow size dispersions. Although the core electronic properties of CdSe are explained in terms of the quantum confinement model, experimental efforts to elucidate the surface structure of these materials have been limited. Typically, colloidal CdSe QDs are coated with an organic surfactant, which typically consists of an organo-phosphine, -thiol, or -amine, that has the function of energetically relaxing defect states via coordination to partially coordinated surface atoms. The organic surfactant also acts to enhance carrier confinement and prevent agglomeration of the particles. Chemically, it has been shown that the bonding of the surfactant to the CdSe QD occurs through Cd atoms resulting cleavage of the Se atoms and formation of a Cd-rich (i.e. non-stoichiometric) particle [5].
Unraveling the Mesoscopic Character of Quantum Dots in Nanophotonics
NASA Astrophysics Data System (ADS)
Tighineanu, P.; Srensen, A. S.; Stobbe, S.; Lodahl, P.
2015-06-01
We provide a microscopic theory for semiconductor quantum dots that explains the pronounced deviations from the prevalent point-dipole description that were recently observed in spectroscopic experiments on quantum dots in photonic nanostructures. The deviations originate from structural inhomogeneities generating a large circular quantum current density that flows inside the quantum dot over mesoscopic length scales. The model is supported by the experimental data, where a strong variation of the multipolar moments across the emission spectrum of quantum dots is observed. Our work enriches the physical understanding of quantum dots and is of significance for the fields of nanophotonics, quantum photonics, and quantum-information science, where quantum dots are actively employed.
Spectroscopic analysis of semiconductor quantum dot surfaces
NASA Astrophysics Data System (ADS)
Meulenberg, Robert William
An important field of research recently in nanoscience is to examine the effect of an impurity atom on the physics of quantum dots (QDs). An intriguing question to ask is how an unintentional dopant, such as a surface atom, can affect the optical and vibrational properties of the QD. In this dissertation these effects are analyzed by using resonance Raman and photoluminescence spectroscopies. The data indicates that changes in the nature of electron-phonon (el-ph) coupling in the strongly confined regime leads to changes in lattice ionicity for CdSe QDs. The changes in lattice ionicity is strictly evident in the vibrational properties of the QDs, as slight changes in the chemical preparation of the dots can induce various levels of surface strain on the QDs. More proof indicating that chemical preparation can alter the physics of these materials is evident in the positron annihilation data obtained in collaboration with Lawrence Livermore National Laboratory. The trends in the data suggest the positron localization is changed as the colloidal preparation is changed. Correlation of these experiments indicates that the surface chemistry and physics of QDs are very complex and cannot be ignored.
Quantum confinement in Si and Ge nanostructures: Theory and experiment
Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.
2014-03-15
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.
Coupling and entangling of quantum states in quantum dot molecules.
Bayer, M; Hawrylak, P; Hinzer, K; Fafard, S; Korkusinski, M; Wasilewski, Z R; Stern, O; Forchel, A
2001-01-19
We demonstrate coupling and entangling of quantum states in a pair of vertically aligned, self-assembled quantum dots by studying the emission of an interacting electron-hole pair (exciton) in a single dot molecule as a function of the separation between the dots. An interaction-induced energy splitting of the exciton is observed that exceeds 30 millielectron volts for a dot layer separation of 4 nanometers. The results are interpreted by mapping the tunneling of a particle in a double dot to the problem of a single spin. The electron-hole complex is shown to be equivalent to entangled states of two interacting spins. PMID:11161192
Gallium arsenide second-window quantum dot VCSEL
NASA Astrophysics Data System (ADS)
Pougeoise, E.; Gilet, Ph.; Dunoyer, N.; Grosse, Ph.; Poncet, S.; Grenouillet, L.; Duvaut, Ph.; Chelnokov, A.; Gérard, J.-M.; Hamelin, R.; Rossat, C.
2006-03-01
We have processed 1.3 μm range InAs quantum dot oxide confined vertical cavity surface emitting lasers with top distributed Bragg reflectors contacts, all on GaAs substrate. Our devices exhibit acceptable parameters for 10 Gigabit Ethernet standards. 1275 nm lasing operation is achieved with low operation voltage and low threshold current. We study the threshold current variation with temperature in continuous wave and pulsed operation.
Fluorescent Quantum Dots for Biological Labeling
NASA Technical Reports Server (NTRS)
McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit
2003-01-01
Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.
Magnon-driven quantum dot refrigerators
NASA Astrophysics Data System (ADS)
Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan
2015-12-01
A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.
Quantum dots and prion proteins
Sobrova, Pavlina; Blazkova, Iva; Chomoucka, Jana; Drbohlavova, Jana; Vaculovicova, Marketa; Kopel, Pavel; Hubalek, Jaromir; Kizek, Rene; Adam, Vojtech
2013-01-01
A diagnostics of infectious diseases can be done by the immunologic methods or by the amplification of nucleic acid specific to contagious agent using polymerase chain reaction. However, in transmissible spongiform encephalopathies, the infectious agent, prion protein (PrPSc), has the same sequence of nucleic acids as a naturally occurring protein. The other issue with the diagnosing based on the PrPSc detection is that the pathological form of prion protein is abundant only at late stages of the disease in a brain. Therefore, the diagnostics of prion protein caused diseases represent a sort of challenges as that hosts can incubate infectious prion proteins for many months or even years. Therefore, new in vivo assays for detection of prion proteins and for diagnosis of their relation to neurodegenerative diseases are summarized. Their applicability and future prospects in this field are discussed with particular aim at using quantum dots as fluorescent labels. PMID:24055838
Quantum dot-based theranostics
Ho, Yi-Ping; Leong, Kam W.
2010-01-01
Luminescent semiconductor nanocrystals, also known as quantum dots (QDs), have advanced the fields of molecular diagnostics and nanotherapeutics. Much of the initial progress for QDs in biology and medicine has focused on developing new biosensing formats to push the limit of detection sensitivity. Nevertheless, QDs can be more than passive bio-probes or labels for biological imaging and cellular studies. The high surface-to-volume ratio of QDs enables the construction of a smart multifunctional nanoplatform, where the QDs serve not only as an imaging agent but also a nanoscaffold catering for therapeutic and diagnostic (theranostic) modalities. This mini review highlights the emerging applications of functionalized QDs as fluorescence contrast agents for imaging or as nanoscale vehicles for delivery of therapeutics, with special attention paid to the promise and challenges towards QD-based theranostics. PMID:20648364
Instability-driven quantum dots
NASA Astrophysics Data System (ADS)
Aqua, Jean-Nol; Frisch, Thomas
2015-10-01
When a film is strained in two dimensions, it can relax by developing a corrugation in the third dimension. We review here the resulting morphological instability that occurs by surface diffusion, called the Asaro-Tiller-Grinfel'd instability (ATG), especially on the paradigmatic silicon/germanium system. The instability is dictated by the balance between the elastic relaxation induced by the morphological evolution, and its surface energy cost. We focus here on its development at the nanoscales in epitaxial systems when a crystal film is coherently deposited on a substrate with a different lattice parameter, thence inducing epitaxial stresses. It eventually leads to the self-organization of quantum dots whose localization is dictated by the instability long-time dynamics. In these systems, new effects, such as film/substrate wetting or crystalline anisotropy, come into play and lead to a variety of behaviors. xml:lang="fr"
Phonon-induced Exciton Dephasing in Quantum Dots and Quantum Dot Molecules
NASA Astrophysics Data System (ADS)
Muljarov, E. A.; Zimmermann, R.
2007-04-01
The phonon-induced dephasing in quantum dots is due to two basic sources: real and virtual phonon-assisted transitions between excitonic states. We calculate the time-dependent optical polarization and absorption in single and coupled quantum dots. We show that, depending on the energy distance between exciton levels in quantum dots, the dephasing can be dominated either by real acoustic phonon-assisted transitions, or by virtual transitions.
What Quantum Dots Can Do for You
NASA Astrophysics Data System (ADS)
Salamo, Gregory
2008-03-01
Recent clever techniques for fabricating nanosize materials, one-atomic-layer-at-a-time, have simultaneously opened a door to a fantastic adventure at the frontier of physics, chemistry, biology, and engineering. Nanosize materials simply do not behave as the bulk. Indeed, the rules that govern the growth and behavior of these tiny structures are unexplored. In this talk we will discuss our recent efforts to be the architect of their shape, size, density, and position of nanostructures and along the way, the interactions between them that lead to their optical and electrical behavior. While self-assembly is providing exciting quantum dot (QD) structures to explore, like the QD molecules shown here, it is equally exciting to try to use the rules we uncover to encourage QD formation to take a desired path. Can we understand the formation of faceted nanostructures? Can we encourage or seed dot structures to form specific arrays? Is it possible to engineer greater homogeneity of dot shape and size? Can we design both the optical and electrical behavior of either individual or arrays of nanostructures to mimic those we find in nature? In this talk we will review our progress to answer these questions and discuss the possibilities and challenges ahead. For example, we will discuss the formation of individual faceted nanostructures as well as the fabrication of a vertically and laterally ordered QD stacks forming three-dimensional QD arrays. As another example, we will discuss the importance of surfaces with high Miller indices, as a template to the formation of nanostructures as well as their potential role in determining the shape and increased size uniformity of the confined structures. Importantly, these observations lead to an even more basic question of when and why high index surfaces are stable. Indeed, we have found that in order to understand the origin of high index surfaces that bound nanostructures we have to study them directly.
Spin-valley physics in realistic silicon quantum dots
NASA Astrophysics Data System (ADS)
Ruskov, Rusko; Tahan, Charles
2014-03-01
Silicon quantum dots are leading approach for solid-state quantum bits. However, one must contend with new physics due to the multi-valley nature of silicon. At a Si heterostructure interface the valley degeneracy is lifted and the different valley subspaces of the confined electron spin configurations do not interact. When, however, the valley states are brought at resonance in the presence of a non-ideal interface, spin-valley mixing can occur via spin-orbit coupling. Within the same theoretical framework, we can successfully describe the spin relaxation processes in non-ideal quantum dots [e.g., relaxation ``hot spots'' in C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, and A. S. Dzurak, Nature Comm. 4, 2069, (2013)] and a new electron spin resonance (ESR) anticrossing splitting in a double quantum dot transport experiment [X. Hao, R. Ruskov, M. Xiao, C. Tahan, and H. W. Jiang, work in preparation]. Understanding the spin-valley physics of inelastic tunneling is critical to a proper understanding of the transport through double quantum dots, with or without an ESR drive field.
Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots
Robert, C. E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O.; Nestoklon, M. O.; Pereira da Silva, K.; Departamento de Fsica, Universidade Federal do Cear, P.O. Box 6030, FortalezaCE, 60455-970 ; Alonso, M. I.; Goi, A. R.; ICREA, Passeig Llus Companys 23, 08010 Barcelona ; Turban, P.
2014-01-06
The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.
Entangled exciton states in quantum dot molecules
NASA Astrophysics Data System (ADS)
Bayer, Manfred
2002-03-01
Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For example, using an electric field along the molecule axis we can break the entanglement. Tunneling of carriers is prevented then and emission from intra-dot and inter-dot excitons in which electron and hole are located on the same and on opposite dots, respectively, is observed. The voltage required for the entanglement breaking increases with decreasing barrier width reflecting the increasing 'robustness' of the entanglement for narrow barriers.
Theory Of Alkyl Terminated Silicon Quantum Dots
Reboredo, F; Galli, G
2004-08-19
We have carried out a series of ab-initio calculations to investigate changes in the optical properties of Si quantum dots as a function of surface passivation. In particular, we have compared hydrogen passivated dots with those having alkyl groups at the surface. We find that, while on clusters with reconstructed surfaces a complete alkyl passivation is possible, steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. In addition, our calculations show that steric repulsion may have a dominant effect in determining the surface structure, and eventually the stability of alkyl passivated clusters, with results dependent on the length of the carbon chain. Alkyl passivation weakly affects optical gaps of silicon quantum dots, while it substantially decreases ionization potentials and electron affinities and affect their excited state properties. On the basis of our results we propose that alkyl terminated quantum dots may be size selected taking advantage of the change in ionization potential as a function of the cluster size.
Quantum confinement-induced tunable exciton states in graphene oxide
Lee, Dongwook; Seo, Jiwon; Zhu, Xi; Lee, Jiyoul; Shin, Hyeon-Jin; Cole, Jacqueline M.; Shin, Taeho; Lee, Jaichan; Lee, Hangil; Su, Haibin
2013-01-01
Graphene oxide has recently been considered to be a potential replacement for cadmium-based quantum dots due to its expected high fluorescence. Although previously reported, the origin of the luminescence in graphene oxide is still controversial. Here, we report the presence of core/valence excitons in graphene-based materials, a basic ingredient for optical devices, induced by quantum confinement. Electron confinement in the unreacted graphitic regions of graphene oxide was probed by high resolution X-ray absorption near edge structure spectroscopy and first-principles calculations. Using experiments and simulations, we were able to tune the core/valence exciton energy by manipulating the size of graphitic regions through the degree of oxidation. The binding energy of an exciton in highly oxidized graphene oxide is similar to that in organic electroluminescent materials. These results open the possibility of graphene oxide-based optoelectronic device technology. PMID:23872608
Jahan K, Luhluh Boda, Aalu; Chatterjee, Ashok
2015-05-15
The problem of an exciton trapped in a three dimensional Gaussian quantum dot is studied in the presence of an external magnetic field. A variational method is employed to obtain the ground state energy of the exciton as a function of the quantum dot size, the confinement strength and the magnetic field. It is also shown that the variation of the size of the exciton with the radius of the quantum dot.
Single to quadruple quantum dots with tunable tunnel couplings
Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K.; Otsuka, T.; Tarucha, S.
2014-03-17
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.
Nonadiabatic geometrical quantum gates in semiconductor quantum dots
Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto
2003-05-01
In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented.
Electron spin coherence near room temperature in magnetic quantum dots
Moro, Fabrizio; Turyanska, Lyudmila; Wilman, James; Fielding, Alistair J.; Fay, Michael W.; Granwehr, Josef; Patan, Amalia
2015-01-01
We report on an example of confined magnetic ions with long spin coherence near room temperature. This was achieved by confining single Mn2+ spins in colloidal semiconductor quantum dots (QDs) and by dispersing the QDs in a proton-spin free matrix. The controlled suppression of MnMn interactions and minimization of Mnnuclear spin dipolar interactions result in unprecedentedly long phase memory (TM?~?8??s) and spinlattice relaxation (T1?~?10?ms) time constants for Mn2+ ions at T?=?4.5?K, and in electron spin coherence observable near room temperature (TM?~?1??s). PMID:26040432
Exciton related nonlinear optical properties of a spherical quantum dot
NASA Astrophysics Data System (ADS)
Aksahin, E.; Ustoglu Unal, V.; Tomak, M.
2015-11-01
The nonlinear optical properties of an exciton in a spherical quantum dot (QD) is studied analytically. The nonlinear optical coefficients are calculated within the density matrix formalism. The electronic problem is solved within the effective mass approximation. The contributions from the competing effects of the confinement, the Coulomb interaction, and the applied electric field are calculated and compared with each other. We have made no assumptions about the strength of the confinement. We concentrate the effect of the Coulomb interaction. Our results may provide an input for optimization of the nonlinear optical coefficients.
Effect of hydrostatic pressure and polaronic mass of the binding energy in a spherical quantum dot
NASA Astrophysics Data System (ADS)
A. Rejo Jeice Gerardin, Jayam, Sr.; S. Joseph Wilson, K.
2015-11-01
Simultaneous effect of hydrostatic pressure and polaronic mass on the binding energies of the ground and excited states of an on-center hydrogenic impurity confined in a GaAs/GaAlAs spherical quantum dot are theoretically investigated by the variational method within the effective mass approximation. The binding energy is calculated as a function of dot radius and pressure. Our findings proved that the hydrostatic pressure led to the decrease of confined energy and the increase of donor binding energy. Conduction band non-parabolicity and the polaron masses are effective in the donor binding energy which is significant for narrow dots not in the confined energy. The maximum donor binding energy achieved by the polaronic mass in the ground and excited states are 2%19% for the narrow dots. The confined and donor binding energies approach zero as the dot size approaches infinity.
Quantum Dots Investigated for Solar Cells
NASA Technical Reports Server (NTRS)
Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.
2001-01-01
The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in their fluorescence (see the photograph).
Opportunities and challenges for quantum dot photovoltaics
NASA Astrophysics Data System (ADS)
Kovalenko, Maksym V.
2015-12-01
Although research into colloidal quantum dots has led to promising results for the realization of photovoltaic devices, a better understanding of the robustness and stability of these devices is necessary before commercial competiveness can be claimed.
Nanomaterials: Earthworms lit with quantum dots
NASA Astrophysics Data System (ADS)
Tilley, Richard D.; Cheong, Soshan
2013-01-01
Yeast, bacteria and fungi have been used to synthesize a variety of nanocrystals. Now, the metal detoxification process in the gut of an earthworm is exploited to produce biocompatible cadmium telluride quantum dots.
Towards registered single quantum dot photonic devices.
Lee, K H; Brossard, F S F; Hadjipanayi, M; Xu, X; Waldermann, F; Green, A M; Sharp, D N; Turberfield, A J; Williams, D A; Taylor, R A
2008-11-12
We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process. PMID:21832772
Colloidal quantum dot materials for infrared optoelectronics
NASA Astrophysics Data System (ADS)
Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.
2015-09-01
Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.
Synthesis, Characterization and Application Of PbS Quantum Dots
Sarma, Sweety; Datta, Pranayee; Barua, Kishore Kr.; Karmakar, Sanjib
2009-06-29
Lead Chalcogenides (PbS, PbSe, PbTe) quantum dots (QDs) are ideal for fundamental studies of strongly quantum confined systems with possible technological applications. Tunable electronic transitions at near--infrared wavelengths can be obtained with these QDs. Applications of lead chalcogenides encompass quite a good number of important field viz. the fields of telecommunications, medical electronics, optoelectronics etc. Very recently, it has been proposed that 'memristor'(Memory resistor) can be realized in nanoscale systems with coupled ionic and electronic transports. The hystersis characteristics of 'memristor' are observed in many nanoscale electronic devices including semiconductor quantum dot devices. This paper reports synthesis of PbS QDs by chemical route. The fabricated samples are characterized by UV-Vis, XRD, SEM, TEM, EDS, etc. Observed characteristics confirm nano formation. I-V characteristics of the sample are studied for investigating their applications as 'memristor'.
Submonolayer Quantum Dot Infrared Photodetector
NASA Technical Reports Server (NTRS)
Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang
2010-01-01
A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
Analysis of single quantum-dot mobility inside 1D nanochannel devices
NASA Astrophysics Data System (ADS)
Hoang, H. T.; Segers-Nolten, I. M.; Tas, N. R.; van Honschoten, J. W.; Subramaniam, V.; Elwenspoek, M. C.
2011-07-01
We visualized individual quantum dots using a combination of a confining nanochannel and an ultra-sensitive microscope system, equipped with a high numerical aperture lens and a highly sensitive camera. The diffusion coefficients of the confined quantum dots were determined from the experimentally recorded trajectories according to the classical diffusion theory for Brownian motion in two dimensions. The calculated diffusion coefficients were three times smaller than those in bulk solution. These observations confirm and extend the results of Eichmann et al (2008 Langmuir 24 714-21) to smaller particle diameters and more narrow confinement. A detailed analysis shows that the observed reduction in mobility cannot be explained by conventional hydrodynamic theory.
First principle thousand atom quantum dot calculations
Wang, Lin-Wang; Li, Jingbo
2004-03-30
A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.
Luminescence of a semiconductor quantum dot system
NASA Astrophysics Data System (ADS)
Baer, N.; Gies, C.; Wiersig, J.; Jahnke, F.
2006-04-01
A microscopic theory is used to study photoluminescence of semiconductor quantum dots under the influence of Coulomb and carrier-photon correlation effects beyond the Hartree-Fock level. We investigate the emission spectrum and the decay properties of the time-resolved luminescence from initially excited quantum dots. The influence of the correlations is included within a cluster expansion scheme up to the singlet-doublet level.
Renormalization in Periodically Driven Quantum Dots
NASA Astrophysics Data System (ADS)
Eissing, A. K.; Meden, V.; Kennes, D. M.
2016-01-01
We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump.
Renormalization in Periodically Driven Quantum Dots.
Eissing, A K; Meden, V; Kennes, D M
2016-01-15
We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump. PMID:26824557
Strain-induced effects on optical properties of magnetized Stranski Krastanov quantum dots
NASA Astrophysics Data System (ADS)
Gupta, S. K.; Kapoor, S.; Kumar, J.; Sen, P. K.
2007-08-01
The optical properties of semiconductor quantum dots are strongly affected by the strain arising due to lattice mismatch of the substrate and deposited material. Hole energy eigenvalues of a strained quantum dot have been calculated and included subsequently in the analytical study of the optical properties of the system in the presence of a moderately strong magnetic field. The anisotropic quantum dot is modelled by assuming a parabolic confinement potential. The analyses are based on a 4\\times 4~\\mathbf {k}\\bdot \\mathbf {p} Hamiltonian model that includes the strain-induced effects. The wavefunctions obtained by solving the eigenvalue equations are used to calculate the dipole matrix elements of the transition between valence band and conduction band. It is observed that, in the presence of strain, the optical properties of the quantum dot are altered significantly since the strain field changes the electronic structure of the quantum dot.
Nanoscale imaging and spontaneous emission control with a single nano-positioned quantum dot
NASA Astrophysics Data System (ADS)
Ropp, Chad; Cummins, Zachary; Nah, Sanghee; Fourkas, John T.; Shapiro, Benjamin; Waks, Edo
2013-02-01
Plasmonic nanostructures confine light on the nanoscale, enabling ultra-compact optical devices that exhibit strong light-matter interactions. Quantum dots are ideal for probing plasmonic devices because of their nanoscopic size and desirable emission properties. However, probing with single quantum dots has remained challenging because their small size also makes them difficult to manipulate. Here we demonstrate the use of quantum dots as on-demand probes for imaging plasmonic nanostructures, as well as for realizing spontaneous emission control at the single emitter level with nanoscale spatial accuracy. A single quantum dot is positioned with microfluidic flow control to probe the local density of optical states of a silver nanowire, achieving 12?nm imaging accuracy. The high spatial accuracy of this scanning technique enables a new method for spontaneous emission control where interference of counter-propagating surface plasmon polaritons results in spatial oscillations of the quantum dot lifetime as it is positioned along the wire axis.
Nanoscale imaging and spontaneous emission control with a single nano-positioned quantum dot.
Ropp, Chad; Cummins, Zachary; Nah, Sanghee; Fourkas, John T; Shapiro, Benjamin; Waks, Edo
2013-01-01
Plasmonic nanostructures confine light on the nanoscale, enabling ultra-compact optical devices that exhibit strong light-matter interactions. Quantum dots are ideal for probing plasmonic devices because of their nanoscopic size and desirable emission properties. However, probing with single quantum dots has remained challenging because their small size also makes them difficult to manipulate. Here we demonstrate the use of quantum dots as on-demand probes for imaging plasmonic nanostructures, as well as for realizing spontaneous emission control at the single emitter level with nanoscale spatial accuracy. A single quantum dot is positioned with microfluidic flow control to probe the local density of optical states of a silver nanowire, achieving 12 nm imaging accuracy. The high spatial accuracy of this scanning technique enables a new method for spontaneous emission control where interference of counter-propagating surface plasmon polaritons results in spatial oscillations of the quantum dot lifetime as it is positioned along the wire axis. PMID:23385591
Control of the cavity reflectivity using a single quantum dot spin
NASA Astrophysics Data System (ADS)
Sun, Shuo; Kim, Hyochul; Solomon, Glenn; Waks, Edo
2015-03-01
The implementation of quantum network and distributive quantum information processing relies on interaction between stationary matter qubits and flying photons. The spin of a single electron or hole confined in a quantum dot is considered as promising matter qubit as it possesses microsecond coherence time and allows picosecond timescale control using optical pulses. The quantum dot spin can also interact with a photon by controlling the optical response of a strongly coupled cavity. Yet all the experimental demonstrations of the cavity spectrum control have used neutral dots. The spin-dependent cavity spectrum for a strongly coupled charged quantum dot and cavity system has not been reported. Here, we report an experimental realization of a spin-photon interface using a strongly coupled quantum dot and cavity system. We show large modulation of the cavity reflection spectrum by manipulating the spin states of the quantum dot. The spin-photon interface is crucial for realizing a quantum logic gate or generating hybrid entanglement between a quantum dot spin and a photon. Our results represent an important step towards semiconductor based quantum logic devices and on-chip quantum networks.
Colloidal quantum dots for mid-infrared detection (Presentation Recording)
NASA Astrophysics Data System (ADS)
Guyot-Sionnest, Philippe
2015-08-01
Colloidal quantum dots present an opportunity as infrared and liquid processed materials. Initial results in 2011 showed mid-infrared detection with HgTe colloidal quantum dots in the mi-IR range, 3-5 microns. This has been now extended to the long-wave IR, 8-12 microns. The infrared response from the HgTe colloidal quantum dots arises from the absorption of light across the gap created by the confinement. The large dots absorbing the LWIR are about 20 nm in size and the size dispersion will need improvements. While Interband absorption requires the material to be zero or small-gap semiconductors, intraband transitions have no such limitations. However, this requires doped colloidal quantum dots. Two colloidal quantum dot materials, the small gap (0.6 eV) b-HgS and the zero-gap HgSe turn out to be stably doped with electrons. This has led to the observation of Mid-IR intraband photoconduction in both systems and alternative materials for IR detection. There are several basic challenges, besides fabrication and reliability. The proximity of the surface from the excitation leads to very short excited lifetimes due to nonradiative processes. Controlling the surface will be the avenue to lengthen the lifetime, while plasmonic coupling may lead to shorter radiative lifetime. Since the surface is easily chemically modified, it also leads to strong changes in the Fermi level and this will need to be controlled. In this talk, I will describe my understanding of the potential and limitations of this material approach to infrared detection, while discussing aspects of transport, photoluminescence, doping and photovoltaic responses.
Probing the size and environment induced phase transformation in CdSe quantum dots
Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai
2011-11-17
The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.
Strain-Induced Localized States Within the Matrix Continuum of Self-Assembled Quantum Dots
Popescu, V.; Bester, G.; Zunger, A.
2009-07-01
Quantum dot-based infrared detectors often involve transitions from confined states of the dot to states above the minimum of the conduction band continuum of the matrix. We discuss the existence of two types of resonant states within this continuum in self-assembled dots: (i) virtual bound states, which characterize square wells even without strain and (ii) strain-induced localized states. The latter emerge due to the appearance of 'potential wings' near the dot, related to the curvature of the dots. While states (i) do couple to the continuum, states (ii) are sheltered by the wings, giving rise to sharp absorption peaks.
Optical Control of Energy-Level Structure of Few Electrons in AlGaAs/GaAs Quantum Dots
NASA Astrophysics Data System (ADS)
Kalliakos, Sokratis; Pellegrini, Vittorio; Garcia, Cesar Pascual; Pinczuk, Aron; Pfeiffer, Loren N.; West, Ken. W.
2008-02-01
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
Badada, Bekele H; Shi, Teng; Jackson, Howard E; Smith, Leigh M; Zheng, Changlin; Etheridge, Joanne; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati
2015-12-01
In this Letter, we explore the nature of exciton localization in single GaAs/AlGaAs nanowire quantum well tube (QWT) devices using photocurrent (PC) spectroscopy combined with simultaneous photoluminescence (PL) and photoluminescence excitation (PLE) measurements. Excitons confined to GaAs quantum well tubes of 8 and 4 nm widths embedded into an AlGaAs barrier are seen to ionize at high bias levels. Spectroscopic signatures of the ground and excited states confined to the QWT seen in PL, PLE, and PC data are consistent with simple numerical calculations. The demonstration of good electrical contact with the QWTs enables the study of Stark effect shifts in the sharp emission lines of excitons localized to quantum dot-like states within the QWT. Atomic resolution cross-sectional TEM measurements and an analysis of the quantum confined Stark effect of these dots provide insights into the nature of the exciton localization in these nanostructures. PMID:26562619
Resonant Raman scattering in self-assembled quantum dots
Menendez-Proupin, E.; Trallero-Giner, C.; Ulloa, S. E.
1999-12-15
A theoretical treatment for first-order resonant Raman scattering in self-assembled quantum dots (SAQD's) of different materials is presented. The dots are modeled as cylindrical disks with elliptical cross section, to simulate shape and confinement anisotropies obtained from the SAQD growth conditions. Coulomb interaction between electron and hole is considered in an envelope function Hamiltonian approach and the eigenvalues and eigenfunctions are obtained by a matrix diagonalization technique. By including excitonic intermediate states in the Raman process, the scattering efficiency and cross section are calculated for long-range Froehlich exciton-phonon interaction. The Froehlich interaction in the SAQD is considered in an approach in which both the mechanical and electrostatic matching boundary conditions are fulfilled at the SAQD interfaces. Exciton and confined phonon selection rules are derived for Raman processes. Characteristic results for SAQD's are presented, including InAs dots in GaAs, as well as CdSe dots in ZnSe substrates. We analyze how Raman spectroscopy would give information on carrier masses, confinement anisotropy effects, and SAQD geometry. (c) 1999 The American Physical Society.
Metamorphic quantum dots: Quite different nanostructures
Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.
2010-09-15
In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.
Multiple Exciton Generation in PbSe Quantum Dots and Quantum Dot Solar Cells
Beard, M. C.; Semonin, O. E.; Nozik, A. J.; Midgett, A. G.; Luther, J. M.
2012-01-01
Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by channeling the excess photon energy (energy greater than the bandgap) to produce multiple electron-hole pairs. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot-excitons in bulk semiconductors. We have demonstrated that MEG in PbSe QDs is about two times as efficient at producing multiple electron-hole pairs than bulk PbSe. I will discuss our recent results investigating MEG in PbSe, PbS and PbSxSe1-x, which exhibits an interesting size-dependence of the MEG efficiency. Thin films of electronically coupled PbSe QDs have shown promise in simple photon-to-electron conversion architectures with power conversion efficiencies above 5%. We recently reported an enhancement in the photocurrent resulting from MEG in PbSe QD-based solar cells. We find that the external quantum efficiency (spectrally resolved ratio of collected charge carriers to incident photons) peaked at 114% in the best devices measured, with an internal quantum efficiency of 130%. These results demonstrate that MEG charge carriers can be collected in suitably designed QD solar cells. We compare our results to transient absorption measurements and find reasonable agreement.
Advancements in the Field of Quantum Dots
NASA Astrophysics Data System (ADS)
Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.
2012-08-01
Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.
Optical phonons in GaN/AlN quantum dots: leaky modes
NASA Astrophysics Data System (ADS)
Romanov, Dmitri; Mitin, Vladimir; Stroscio, Michael
2002-05-01
Surface polar vibrations of a GaN quantum dot in AlN matrix are analyzed in the framework of the macroscopic dielectric continuum model. The conditions are found for existence of surface modes on a quantum dot of oblate spheroidal form. These conditions determine continuum frequency regions rather than quantized frequencies. The found modes are peculiar leaky states. They can provide effective energy relaxation of the confined electrons.
Quantum-dot-in-perovskite solids
NASA Astrophysics Data System (ADS)
Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H.
2015-07-01
Heteroepitaxy--atomically aligned growth of a crystalline film atop a different crystalline substrate--is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned `dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Quantum-dot-in-perovskite solids.
Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H
2015-07-16
Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics. PMID:26178963
Luminescent Quantum Dots as Ultrasensitive Biological Labels
NASA Astrophysics Data System (ADS)
Nie, Shuming
2000-03-01
Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.
Studies on the third-harmonic generations in cylindrical quantum dots with an applied electric field
NASA Astrophysics Data System (ADS)
Shao, Shuai; Guo, Kang-Xian; Zhang, Zhi-Hai; Li, Ning; Peng, Chao
2010-12-01
The third-harmonic generation (THG) coefficient for cylinder quantum dots with an applied electric field is theoretically investigated. Using the compact density-matrix approach and the iterative method, we get the analytical expression of the THG coefficient, and the numerical calculations of the typical GaAs/AlAs cylinder quantum dots are presented. The results show that the THG coefficient can reach the magnitude of 10 -9 m 2/V 2. Apart from the length L and radius R of cylindrical quantum dots, both the parabolic confining potential and an applied electric field can also influence the THG coefficient.
Neutral donor in a bilayer spherical semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Acosta, J. Gonzlez; Joya, Miryam R.; Barba-Ortega, J.
2015-11-01
The binding energy of bilayer spherical quantum dots (BSQDs) with randomly distributed neutral donor D0 is computationally simulated. We analyze the ground state energy by using different potentials of confinement that include changes in its height, transition region and width, considering theoretical development in which the variational procedure takes a trial function as a product of the ground state wavefunction of the uncoupled electron in the heterostructure, with a correlation function that depends only on electron-ion separation. We find that the curves of the binding energy with repulsive layer have additional peaks, whose position and height depend on the configuration of the confinement is chosen at the center of the dot. Additionally, our results include novel curves for the density of D0 impurity states for different potentials shapes.
Theory of quantum coherence phenomena in semiconductor quantum dots.
Chow, Weng Wah; Phillips, Mark Christopher; Schneider, Hans Christian
2003-06-01
This paper explores quantum-coherence phenomena in a semiconductor quantum-dot structure. The calculations predict the occurrence of inversionless gain, electromagnetically induced transparency, and refractive-index enhancement in the transient regime for dephasing rates typical under room temperature and high excitation conditions. They also indicate deviations from atomic systems because of strong many-body effects. Specifically, Coulomb interaction involving states of the quantum dots and the continuum belonging to the surrounding quantum well leads to collision-induced population redistribution and many-body energy and field renormalizations that modify the magnitude, spectral shape, and time dependence of quantum-coherence effects.
Intraband absorption in n-doped InAs/GaAs quantum dots
NASA Astrophysics Data System (ADS)
Sauvage, S.; Boucaud, P.; Julien, F. H.; Grard, J.-M.; Thierry-Mieg, V.
1997-11-01
We have investigated the intraband absorption within the conduction band of InAs/GaAs quantum dots. The islands obtained by self-organized epitaxy are modulation doped with a silicon planar doping 2 nm below the dot layer plane. The dots exhibit infrared absorption polarized along the growth axis in the midinfrared spectral range. The absorption is maximum around 150 meV with a large broadening around 130 meV. This broadening is attributed to size fluctuations within the one dot layer plane and the consequent variation of the electron confinement energy with the dot size. The magnitude of the absorption along the growth axis for the one dot layer plane is ?2.510-2% which corresponds to an equivalent absorption cross section ?z?3.110-15 cm2. We show that the intraband absorption can also be clearly observed using a photoinduced infrared absorption technique with the doped quantum dots.
Spectroscopy characterization and quantum yield determination of quantum dots
NASA Astrophysics Data System (ADS)
Contreras Ortiz, S. N.; Mejía Ospino, E.; Cabanzo, R.
2016-02-01
In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum.
(In,Mn)As multilayer quantum dot structures
Bouravleuv, Alexei; Sapega, Victor; Nevedomskii, Vladimir; Khrebtov, Artem; Samsonenko, Yuriy; Cirlin, George
2014-12-08
(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.
Preparation of chiral quantum dots.
Moloney, Mchel P; Govan, Joseph; Loudon, Alexander; Mukhina, Maria; Gun'ko, Yurii K
2015-04-01
Chiral quantum dots (QDs) are expected to have a range of potential applications in photocatalysis, as specific antibacterial and cytotoxic drug-delivery agents, in assays, as sensors in asymmetric synthesis and enantioseparation, and as fluorescent chiral nanoprobes in biomedical and analytical technologies. In this protocol, we present procedures for the synthesis of chiral optically active QD nanostructures and their quality control using spectroscopic studies and transmission electron microscopy imaging. We closely examine various synthetic routes for the preparation of chiral CdS, CdSe, CdTe and doped ZnS QDs, as well as of chiral CdS nanotetrapods. Most of these nanomaterials can be produced by a very fast (70 s) microwave-induced heating of the corresponding precursors in the presence of D- or L-chiral stabilizing coating ligands (stabilizers), which are crucial to generating optically active chiral QDs. Alternatively, chiral QDs can also be produced via the conventional hot injection technique, followed by a phase transfer in the presence of an appropriate chiral stabilizer. We demonstrate that the properties, structure and behavior of chiral QD nanostructures, as determined by various spectroscopic techniques, strongly depend on chiral stabilizers and that the chiral effects induced by them can be controlled via synthetic procedures. PMID:25741991
Optically controlled spins in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Economou, Sophia
2010-03-01
Spins in charged semiconductor quantum dots are currently generating much interest, both from a fundamental physics standpoint, as well as for their potential technological relevance. Being naturally a two-level quantum system, each of these spins can encode a bit of quantum information. Optically controlled spins in quantum dots possess several desirable properties: their spin coherence times are long, they allow for all-optical manipulation---which translates into fast logic gates---and their coupling to photons offers a straightforward route to exchange of quantum information between spatially separated sites. Designing the laser fields to achieve the unprecedented amount of control required for quantum information tasks is a challenging goal, towards which there has been recent progress. Special properties of hyperbolic secant optical pulses enabled the design of single qubit rotations, initially developed about the growth axis z [1], and later about an arbitrary direction [2]. Recently we demonstrated our theoretical proposal [1] in an ensemble of InAs/GaAs quantum dots by implementing ultrafast rotations about the z axis by an arbitrary angle [3], with the angle of rotation as a function of the optical detuning in excellent agreement with the theoretical prediction. We also developed two-qubit conditional control in a quantum dot `molecule' using the electron-hole exchange interaction [4]. In addition to its importance in quantum dot-based quantum computation, our two-qubit gate can also play an important role in photonic cluster state generation for measurement-based quantum computing [5]. [1] S. E. Economou, L. J. Sham, Y. Wu, D. S. Steel, Phys. Rev. 74, 205415 (2006) [2] S. E. Economou and T. L. Reinecke, Phys. Rev. Lett., 99, 217401 (2007) [3] A. Greilich, S. E. Economou et al, Nature Phys. 5, 262 (2009) [4] S. E. Economou and T. L. Reinecke, Phys. Rev. B, 78, 115306 (2008) [5] S. E. Economou, N. H. Lindner, and T. Rudolph, in preparation
Transport, Charge Sensing, and Quantum Control in Si/SiGe Double Quantum Dots
NASA Astrophysics Data System (ADS)
Wang, Ke; Koppinen, Panu; Dovzhenko, Yuliya; Petta, Jason
2011-03-01
Si/SiGe quantum dots hold great promise as ultra-coherent qubits. In comparison with the GaAs system, Si has a weaker hyperfine interaction due to the zero nuclear spin of 28 Si and smaller spin-orbit coupling due to its lighter atomic weight. However, the fabrication of highly controllable Si/SiGe quantum dots is complicated by valley degeneracy, the larger effective electron mass, and the difficulty of obtaining high quality samples. Here we develop a robust fabrication process for depletion mode Si/SiGe quantum dots, demonstrating high quality ohmic contacts and low-leakage Pd top gates. We report DC transport measurements as well as charge sensing in single and double quantum dots. The quantum dot gate electrode pattern allows a relatively high level of control over the confinement potential, tunneling rates, and electron occupation. Funded by the Sloan and Packard Foundations, NSF, and DARPA QuEST. We thank Jag Shah for logistical support.
Magnetic Polarons and Bipolarons in Quantum Dots
NASA Astrophysics Data System (ADS)
Oszwaldowski, Rafal
2012-02-01
Magnetically doped (typically by Mn) semiconductor quantum dots (QDs) allow a control of magnetic ordering in ways not available in the bulk. For example, onset of magnetism can be realized by adding a single carrier or changing symmetry of the quantum confinement, even at a fixed carrier number [1]. Recent experiments revisit the concept of magnetic polaron [2], formed when a single carrier added to a QD aligns the Mn spins through exchange interaction. The experiments [3,4] show that the induced magnetization persists at relatively high temperatures. First, we discuss a QD system, in which the experimental magnetic polaron energy, in addition to its relatively high value, shows a surprisingly weak temperature dependence [4]. We explain this effect by magnetic anisotropy of the QD. Next, we turn to the case where a magnetic QD contains two carriers. We find theoretically that Mn spins align, forming a magnetic 'bipolaron', even when the ground state has zero carrier-spin [5]. The corresponding state breaks spatial symmetry, unlike in the case of a single magnetic polaron. We propose experimental tests of our prediction. We also explore the stability of the broken-symmetry state with zero net magnetization versus other patterns of magnetization [6]. Finally, we show some interesting consequences of diffusive coupling of a magnetic QD to a reservoir of carriers [7]. This work was done in collaboration with P. Stano, J. Pientka, A. Petukhov, and I. Zutic.[4pt] [1] R. M. Abolfath, et al. Phys. Rev. Lett. 101, 207202 (2008).[0pt] [2] Maksimov, A. et al. Phys. Rev. B 62, R7767 (2000), J. Seufert et al., Phys. Rev. Lett. 88, 027402 (2002).[0pt] [3] R. Beaulac et al., Science 325, 973 (2009).[0pt] [4] I. R. Sellers, et al., Phys. Rev. B 82, 195320 (2010).[0pt] [5] R. Oszwaldowski, et al., Phys. Rev. Lett. 106, 177201 (2011)[0pt] [6] P. Stano, R. Oszwaldowski, A. G. Petukhov, and I. Zutic, preprint.[0pt] [7] J. M. Pientka, R. Oszwaldowski, A. G. Petukhov, J. E. Han and I. Zutic, Reentrant Magnetic Polaron Formation in Quantum Dots, preprint.
Spin-orbit induced two-electron spin relaxation in double quantum dots
NASA Astrophysics Data System (ADS)
Borhani, Massoud; Hu, Xuedong
2011-03-01
We study the spin decay of two electrons confined in a double quantum dots via the spin-orbit interaction and acoustic phonons. We have obtained a generic form for the spin Hamiltonian for two electrons confined in (elliptic) harmonic potentials in doubles dots and in the presence of an arbitrary applied magnetic field. Our focus is on the interdot bias regime where singlet-triplet splitting is small, in contrast to the spin-blockade regime. Our results clarify the spin-orbit mediated two-spin relaxation in lateral/nanowire quantum dots, particularly when the confining potentials are different in each dot. We thank support by NSA/LPS thorugh ARO.
Dot-in-Well Quantum-Dot Infrared Photodetectors
NASA Technical Reports Server (NTRS)
Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung
2008-01-01
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.
Quantum computer aided design simulation and optimization of semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Gao, X.; Nielsen, E.; Muller, R. P.; Young, R. W.; Salinger, A. G.; Bishop, N. C.; Lilly, M. P.; Carroll, M. S.
2013-10-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool and show how it can be used to both analyze existing experimental QD devices through capacitance calculations and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.
Evaporation-Induced Assembly of Quantum Dots into Nanorings
Chen, Jixin; Liao, Wei-Ssu; Chen, Xin; Yang, Tinglu; Wark, Stacey E.; Son, Dong Hee; Batteas, James D.; Cremer, Paul S.
2011-01-01
Herein, we demonstrate the controlled formation of two-dimensional periodic arrays of ring-shaped nanostructures assembled from CdSe semiconductor quantum dots (QDs). The patterns were fabricated by using an evaporative templating method. This involves the introduction of an aqueous solution containing both quantum dots and polystyrene microspheres onto the surface of a planar hydrophilic glass substrate. The quantum dots became confined to the meniscus of the microspheres during evaporation, which drove ring assembly via capillary forces at the polystyrene sphere/glass substrate interface. The geometric parameters for nanoring formation could be controlled by tuning the size of the microspheres and the concentration of the QDs employed. This allowed hexagonal arrays of nanorings to be formed with thicknesses ranging from single dot necklaces to thick multilayer structures over surface areas of many square millimeters. Moreover, the diameter of the ring structures could be simultaneously controlled. A simple model was employed to explain the forces involved in the formation of nanoparticle nanorings. PMID:19206264
Charge transport through a semiconductor quantum dot-ring nanostructure.
Kurpas, Marcin; K?dzierska, Barbara; Janus-Zygmunt, Iwona; Gorczyca-Goraj, Anna; Wach, El?bieta; Zipper, El?bieta; Ma?ka, Maciej M
2015-07-01
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes. PMID:26052631
Single-quantum-dot-based DNA nanosensor.
Zhang, Chun-Yang; Yeh, Hsin-Chih; Kuroki, Marcos T; Wang, Tza-Huei
2005-11-01
Rapid and highly sensitive detection of DNA is critical in diagnosing genetic diseases. Conventional approaches often rely on cumbersome, semi-quantitative amplification of target DNA to improve detection sensitivity. In addition, most DNA detection systems (microarrays, for example), regardless of their need for target amplification, require separation of unhybridized DNA strands from hybridized stands immobilized on a solid substrate, and are thereby complicated by solution-surface binding kinetics. Here, we report an ultrasensitive nanosensor based on fluorescence resonance energy transfer (FRET) capable of detecting low concentrations of DNA in a separation-free format. This system uses quantum dots (QDs) linked to DNA probes to capture DNA targets. The target strand binds to a dye-labelled reporter strand thus forming a FRET donor-acceptor ensemble. The QD also functions as a concentrator that amplifies the target signal by confining several targets in a nanoscale domain. Unbound nanosensors produce near-zero background fluorescence, but on binding to even a small amount of target DNA (approximately 50 copies or less) they generate a very distinct FRET signal. A nanosensor-based oligonucleotide ligation assay has been demonstrated to successfully detect a point mutation typical of some ovarian tumours in clinical samples. PMID:16379073
Magnetic Polarons in Anisotropic Quantum Dots
NASA Astrophysics Data System (ADS)
Oszwaldowski, Rafal; Petukhov, Andre; Zutic, Igor
2010-03-01
Tunability of confinement in magnetically-doped quantum dots (QDs) allows to tailor magnetism to an extent not available in bulk semiconductors. Versatile control of magnetic ordering, along with piezomagnetism, has been predicted even at a fixed number of carriers [1]. Recent experiments on colloidal QDs revealed strongly bound magnetic polarons (MPs) [2]. Previous studies of MPs in bulk semiconductors showed that the mean-field theory predicts a spurious magnetic phase transition, which is removed by taking into account spin fluctuations [3]. Here we present our theoretical results for MPs forming in QDs with pronounced magnetic anisotropy, which influences the spin fluctuations. We apply our findings to explain some peculiarities of the magnetic behavior of type-II ZnSe/(Zn,Mn)Te QDs, where magnetic polarons are found to persist to at least 200K [4]. Supported by ONR, AFOSR, and NSF-ECCS CAREER. [4pt] [1] R. M. Abolfath, A. G. Petukhov, and I. Zutic, Phys. Rev. Lett. 101, 207202 (2008); I. Zutic and A. G. Petukhov, Nature Mater.4, 623 (2009). [0pt] [2] R. Beaulac et al., Science 325, 973 (2009). [0pt] [3] T. Dietl and J. Spalek, Phys. Rev. Lett. 48, 355 (1982). [0pt] [4] I. R. Sellers, R. Oszwaldowski, et al., preprint; I. R. Sellers et al., Phys. Rev. Lett. 100, 136405 (2008).
Energy transfer from CdSe quantum dots to graphene
NASA Astrophysics Data System (ADS)
Liao, Chunyan; Zhu, Xiuhong
2013-12-01
Graphene-CdSe quantum dots hybrid is a promising structure to combine unique properties of graphene and quantum dots. In this work, graphene was firstly prepared on a 300 nm SiO2/Si substrate by mechanical exfoliation of a highly oriented pyrolytic graphite using scotch tape. Then the samples were immersed in CdSe quantum dots solutions for 15 minutes and followed by water flush. The graphene-CdSe quantum dots hybrid structures were obtained due to the electrostatic adsorption of CdSe quantum dots on graphene. Fluorescence quenching of CdSe quantum dots on graphene was found, which probably indicates the energy transfer from CdSe quantum dots to graphene. The results suggest that graphene is a good candidate for manipulating energy transfer of quantum dots due to its extremely high carrier mobility.
Surface treatment of nanocrystal quantum dots after film deposition
Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro
2015-02-03
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
Excitonic optical properties of wurtzite ZnS quantum dots under pressure
Zeng, Zaiping; Garoufalis, Christos S.; Baskoutas, Sotirios; Bester, Gabriel
2015-03-21
By means of atomistic empirical pseudopotentials combined with a configuration interaction approach, we have studied the optical properties of wurtzite ZnS quantum dots in the presence of strong quantum confinement effects as a function of pressure. We find the pressure coefficients of quantum dots to be highly size-dependent and reduced by as much as 23% in comparison to the bulk value of 63 meV/GPa obtained from density functional theory calculations. The many-body excitonic effects on the quantum dot pressure coefficients are found to be marginal. The absolute gap deformation potential of quantum dots originates mainly from the energy change of the lowest unoccupied molecular orbital state. Finally, we find that the exciton spin-splitting increases nearly linearly as a function of applied pressure.
Accumulation-Only Device Architecture for Si/SiGe Quantum Dots
NASA Astrophysics Data System (ADS)
Wang, K.; Zajac, D.; Hazard, T.; Payette, C.; Petta, J. R.
2014-03-01
Silicon is one of the most promising candidates for ultra coherent quantum bits due to its relatively weak spin-orbit coupling and the absence of nuclear spin in its naturally abundant isotope. High quality charge and spin qubits have been demonstrated with a dual-gate device geometry. Due to the larger effective mass of electrons in Si, it is desirable to have a more tightly confined quantum dot to increase the orbital level spacings. Here we demonstrate a new silicon quantum dot device architecture. The quantum dot and potential barriers are individually formed by corresponding accumulation gates, potentially allowing more precise control over electron occupation and tunnel coupling. The gate geometry can also be scaled up to create multiple quantum dot devices. Research sponsored by the United States Department of Defense.
3D modeling of silicon quantum dots
NASA Astrophysics Data System (ADS)
Mili?i?, S. N.; Badrieh, F.; Vasileska, D.; Gunther, A.; Goodnick, S. M.
2000-05-01
We present results of full 3D self-consistent simulations of the energy spectrum in silicon-based symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.
Biexciton induced refractive index changes in a semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Shojaei, S.
2015-06-01
We present a detailed theoretical study of linear and third order nonlinear refractive index changes in a optically driven disk-like GaN quantum dot. In our numerical calculations, we consider the three level system containing biexciton, exciton, and ground states and use the compact density matrix formalism and iterative method to obtain refractive index changes. Variational method through effective mass approximation are employed to calculate the ground state energy of biexciton and exciton states. The evolution of refractive index changes around one, two and three photon resonance is investigated and discussed for different quantum dot sizes and light intensities. Size-dependent three-photon nonlinear refractive index change versus incident photon energy compared to that of two-photon is obtained and analyzed. As main result, we found that around resonance frequency at exciton-biexciton transition the quantum confinement has great influence on the linear change in refractive index so that for very large quantum dots, it decreases. Moreover, it was found that third order refractive index changes for three photon process is strongly dependent on QD size and light intensity. Our study reveals that considering our simple model leads to results which are in good agreement with other rare numerical results. Comparison with experimental results has been done.
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
Controlled Population Transfer in a Double Quantum Dot System
NASA Astrophysics Data System (ADS)
Fountoulakis, Antonios; Terzis, Andreas F.; Paspalakis, Emmanuel
2007-12-01
We study the potential for controlled population transfer between the ground states of two anharmonic coupled quantum dots. We propose a method based on the interaction of the quantum dot structure with external electromagnetic fields. The interaction of the quantum dot system with the electromagnetic fields is studied with the use of the time-dependent Schrdinger equation. We present numerical results for an asymmetric quantum dot structure.
Exciton binding energy in semiconductor quantum dots
Pokutnii, S. I.
2010-04-15
In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.
Quantum Dot-Based Cell Motility Assay
Gu, Weiwei; Pellegrino, Teresa; Parak Wolfgang J; Boudreau,Rosanne; Le Gros, Mark A.; Gerion, Daniele; Alivisatos, A. Paul; Larabell, Carolyn A.
2005-06-06
Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.
Three-terminal quantum-dot refrigerators.
Zhang, Yanchao; Lin, Guoxing; Chen, Jincan
2015-05-01
Based on two capacitively coupled quantum dots in the Coulomb-blockade regime, a model of three-terminal quantum-dot refrigerators is proposed. With the help of the master equation, the transport properties of steady-state charge current and energy flow between two quantum dots and thermal reservoirs are revealed. It is expounded that such a structure can be used to construct a refrigerator by controlling the voltage bias and temperature ratio. The thermodynamic performance characteristics of the refrigerator are analyzed, including the cooling power, coefficient of performance (COP), maximum cooling power, and maximum COP. Moreover, the optimal regions of main performance parameters are determined. The influence of dissipative tunnel processes on the optimal performance is discussed in detail. Finally, the performance characteristics of the refrigerators operated in two different cases are compared. PMID:26066130
Angiogenic Profiling of Synthesized Carbon Quantum Dots.
Shereema, R M; Sruthi, T V; Kumar, V B Sameer; Rao, T P; Shankar, S Sharath
2015-10-20
A simple method was employed for the synthesis of green luminescent carbon quantum dots (CQDs) from styrene soot. The CQDs were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, and Raman spectroscopy. The prepared carbon quantum dots did not show cellular toxicity and could successfully be used for labeling cells. We also evaluated the effects of carbon quantum dots on the process of angiogenesis. Results of a chorioallantoic membrane (CAM) assay revealed the significant decrease in the density of branched vessels after their treatment with CQDs. Further application of CQDs significantly downregulated the expression levels of pro-angiogenic growth factors like VEGF and FGF. Expression of VEGFR2 and levels of hemoglobin were also significantly lower in CAMs treated with CQDs, indicating that the CQDs inhibit angiogenesis. Data presented here also show that CQDs can selectively target cancer cells and therefore hold potential in the field of cancer therapy. PMID:26371545
Isotopically enhanced triple-quantum-dot qubit
Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.
2015-01-01
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186
Isotopically enhanced triple-quantum-dot qubit.
Eng, Kevin; Ladd, Thaddeus D; Smith, Aaron; Borselli, Matthew G; Kiselev, Andrey A; Fong, Bryan H; Holabird, Kevin S; Hazard, Thomas M; Huang, Biqin; Deelman, Peter W; Milosavljevic, Ivan; Schmitz, Adele E; Ross, Richard S; Gyure, Mark F; Hunter, Andrew T
2015-05-01
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186
Three-terminal quantum-dot refrigerators
NASA Astrophysics Data System (ADS)
Zhang, Yanchao; Lin, Guoxing; Chen, Jincan
2015-05-01
Based on two capacitively coupled quantum dots in the Coulomb-blockade regime, a model of three-terminal quantum-dot refrigerators is proposed. With the help of the master equation, the transport properties of steady-state charge current and energy flow between two quantum dots and thermal reservoirs are revealed. It is expounded that such a structure can be used to construct a refrigerator by controlling the voltage bias and temperature ratio. The thermodynamic performance characteristics of the refrigerator are analyzed, including the cooling power, coefficient of performance (COP), maximum cooling power, and maximum COP. Moreover, the optimal regions of main performance parameters are determined. The influence of dissipative tunnel processes on the optimal performance is discussed in detail. Finally, the performance characteristics of the refrigerators operated in two different cases are compared.
Dirac electrons in graphene-based quantum wires and quantum dots
NASA Astrophysics Data System (ADS)
Peres, N. M. R.; Rodrigues, J. N. B.; Stauber, T.; Lopes dos Santos, J. M. B.
2009-08-01
In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots. We show that due to the formation of sub-bands in the ribbons it is possible to spatially localize some of the electronic modes using a p-n-p junction. We also show that scattering of confined Dirac electrons in a narrow channel by an infinitely massive wall induces mode mixing, giving a qualitative reason for the fact that an analytical solution to the spectrum of Dirac electrons confined in a square box has not yet been found. A first attempt to solve this problem is presented. We find that only the trivial case k = 0 has a solution that does not require the existence of evanescent modes. We also study the spectrum of quantum dots of graphene in a perpendicular magnetic field. This problem is studied in the Dirac approximation, and its solution requires a numerical method whose details are given. The formation of Landau levels in the dot is discussed. The inclusion of the Coulomb interaction among the electrons is considered at the self-consistent Hartree level, taking into account the interaction with an image charge density necessary to keep the back-gate electrode at zero potential. The effect of a radial confining potential is discussed. The density of states of circular and hexagonal quantum dots, described by the full tight-binding model, is studied using the Lanczos algorithm. This is necessary to access the detailed shape of the density of states close to the Dirac point when one studies large systems. Our study reveals that zero-energy edge states are also present in graphene quantum dots. Our results are relevant for experimental research in graphene nanostructures. The style of writing is pedagogical, in the hope that newcomers to the subject will find this paper a good starting point for their research.
Dirac electrons in graphene-based quantum wires and quantum dots.
Peres, N M R; Rodrigues, J N B; Stauber, T; Lopes Dos Santos, J M B
2009-08-26
In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots. We show that due to the formation of sub-bands in the ribbons it is possible to spatially localize some of the electronic modes using a p-n-p junction. We also show that scattering of confined Dirac electrons in a narrow channel by an infinitely massive wall induces mode mixing, giving a qualitative reason for the fact that an analytical solution to the spectrum of Dirac electrons confined in a square box has not yet been found. A first attempt to solve this problem is presented. We find that only the trivial case k = 0 has a solution that does not require the existence of evanescent modes. We also study the spectrum of quantum dots of graphene in a perpendicular magnetic field. This problem is studied in the Dirac approximation, and its solution requires a numerical method whose details are given. The formation of Landau levels in the dot is discussed. The inclusion of the Coulomb interaction among the electrons is considered at the self-consistent Hartree level, taking into account the interaction with an image charge density necessary to keep the back-gate electrode at zero potential. The effect of a radial confining potential is discussed. The density of states of circular and hexagonal quantum dots, described by the full tight-binding model, is studied using the Lanczos algorithm. This is necessary to access the detailed shape of the density of states close to the Dirac point when one studies large systems. Our study reveals that zero-energy edge states are also present in graphene quantum dots. Our results are relevant for experimental research in graphene nanostructures. The style of writing is pedagogical, in the hope that newcomers to the subject will find this paper a good starting point for their research. PMID:21715777
Near-Field Optical Spectroscopy of Magnetic Quantum Dots
NASA Astrophysics Data System (ADS)
Nikitin, V.; Crowell, P. A.; Gupta, J. A.; Awschalom, D. D.; Flack, F.; Samarth, N.
1997-03-01
We have developed a novel magnetically doped semiconductor system to study carrier spin dynamics in the presence of 0D confinement. Recent progress footnote F. Flack et al., Phys. Rev. B. 54, Dec 15 (1996) in the MBE growth of CdSe quantum dots in a ZnSe matrix provides a host system in which interactions of 0D confined carriers with a magnetic field can be modified by judicious incorporation of the magnetic ions (Mn) during epitaxial growth. At low temperatures (T=5 K) DC luminescence from the QD's exhibits 30-60 % polarization in B=4 Tesla, confirming enhancement of the magnetic interactions due to Mn ions. Individual dots are optically accessed by both lithographic masking and by utilizing the high spatial resolution (100 nm) of near-field scanning optical microscopy. Thus electronic energy levels, g-factors, binding energies, and Verdet constants can be locally probed by DC spectroscopies in the near-field. Femtosecond-resolved measurements reveal an increased lifetime of the localized states and allow tracking of carrier spin dynamics in quantum dots.
Electron transport through a quantum dot assisted by cavity photons
NASA Astrophysics Data System (ADS)
Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2013-11-01
We investigate transient transport of electrons through a single quantum dot controlled by a plunger gate. The dot is embedded in a finite wire with length Lx assumed to lie along the x-direction with a parabolic confinement in the y-direction. The quantum wire, originally with hard-wall confinement at its ends, Lx/2, is weakly coupled at t = 0 to left and right leads acting as external electron reservoirs. The central system, the dot and the finite wire, is strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger-gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an x-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to undergo coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a y-polarized photon field due to the anisotropy of our system caused by its geometry.
Electron transport through a quantum dot assisted by cavity photons.
Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2013-11-20
We investigate transient transport of electrons through a single quantum dot controlled by a plunger gate. The dot is embedded in a finite wire with length Lx assumed to lie along the x-direction with a parabolic confinement in the y-direction. The quantum wire, originally with hard-wall confinement at its ends, Lx/2, is weakly coupled at t=0 to left and right leads acting as external electron reservoirs. The central system, the dot and the finite wire, is strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger-gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an x-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to undergo coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a y-polarized photon field due to the anisotropy of our system caused by its geometry. PMID:24132041
NASA Astrophysics Data System (ADS)
Ihly, Rachelle
This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic study of the absorption properties of PbS quantum dot films exposed to air, heat, and UV illumination as a function of quantum dot size has been described. A method to improve the air-stability of films with atomic layer deposition of alumina is demonstrated. Encapsulation of quantum dot films using a protective layer of alumina results in quantum dot solids that maintain tuned absorption for 1000 hours. This thesis focuses on the use of atomic force microscopy and electrical variants thereof to study the physical and electrical characteristics of quantum dot arrays. These types of studies have broad implications in understanding charge transport mechanisms and solar cell device operation, with a particular emphasis on quantum dot transistors and solar cells. Imaging the channel potential of a PbSe quantum dot thin-film in a transistor showed a uniform distribution of charge coinciding with the transistor current voltage characteristics. In a second study, solar cell device operation of ZnO/PbS heterojunction solar cells was investigated by scanning active cross-sections with Kelvin probe microscopy as a function of applied bias, illumination and device architecture. This technique directly provides operating potential and electric field profiles to characterize drift and diffusion currents occurring in the device. SKPM established a field-free region occurring in the quantum dot layer, indicative of diffusion-limited transport. These results provide the path to optimization of future architectures that may employ drift-based transport in the quantum dot layer for enhanced charge extraction and power conversion efficiency.
Optical properties of hybrid quantum dot/quantum well active region based on GaAs system
NASA Astrophysics Data System (ADS)
Thoma, Jiri; Ochalski, Tomasz J.; Hugues, Maxime; Zhang, Shiyong; Hegarty, Stephen P.; Huyet, Guillaume
2012-09-01
We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low- and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots - quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias.
Ambipolar quantum dots in intrinsic silicon
Betz, A. C. Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.
2014-10-13
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
Ambipolar quantum dots in intrinsic silicon
NASA Astrophysics Data System (ADS)
Betz, A. C.; Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.
2014-10-01
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
Bilayer graphene quantum dot defined by topgates
Mller, Andr; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.
2014-06-21
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
NASA Astrophysics Data System (ADS)
Legrand, B.; Grandidier, B.; Nys, J. P.; Stivenard, D.; Grard, J. M.; Thierry-Mieg, V.
1998-07-01
We present cross-sectional scanning tunneling microscopy images and scanning tunneling spectroscopy results of InAs quantum dots grown on GaAs. The samples contain 12 arrays of quantum dots. The analysis of the scanning tunneling microscope images reveals the self-alignment of the dots as well as the different dot interfaces with the under- and overgrown GaAs layers. We measure the strain distribution along the [001] direction in the (110) plane. The roughness of the dot interfaces along the [110] direction is also estimated and local spectroscopy of the dots evidences the electronic confinement (measured gap of 1.25 eV compared with 0.4 eV for bulk InAs).
Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots
NASA Astrophysics Data System (ADS)
Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew
2011-03-01
We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.
Disorder-mediated electron valley resonance in carbon nanotube quantum dots.
Plyi, Andrs; Burkard, Guido
2011-02-25
We propose a scheme for coherent rotation of the valley isospin of a single electron confined in a carbon nanotube quantum dot. The scheme exploits the ubiquitous atomic disorder of the nanotube crystal lattice, which induces time-dependent valley mixing as the confined electron is pushed back and forth along the nanotube axis by an applied ac electric field. Using experimentally determined values for the disorder strength we estimate that valley Rabi oscillations with a period on the nanosecond time scale are feasible. The valley resonance effect can be detected in the electric current through a double quantum dot in the single-electron transport regime. PMID:21405589
Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.
Subramania,Ganapathi Subramanian; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Passmore, Brandon Scott; El-Kady, Ihab Fathy; Shaner, Eric Arthur
2008-09-01
The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.
Quantum Optical Signature of Plasmonically Coupled Nanocrystal Quantum Dots.
Wang, Feng; Karan, Niladri S; Nguyen, Hue Minh; Mangum, Benjamin D; Ghosh, Yagnaseni; Sheehan, Chris J; Hollingsworth, Jennifer A; Htoon, Han
2015-10-01
Small clusters of two to three silica-coated nanocrystals coupled to plasmonic gap-bar antennas can exhibit photon antibunching, a characteristic of single quantum emitters. Through a detailed analysis of their photoluminescence emissions characteristics, it is shown that the observed photon antibunching is the evidence of coupled quantum dot formation resulting from the plasmonic enhancement of dipole-dipole interaction. PMID:26140499
Acoustically induced potential dots in GaAs quantum wells
NASA Astrophysics Data System (ADS)
Alsina, F.; Stotz, J. A. H.; Hey, R.; Santos, P. V.
2004-02-01
Dynamic dots (DDs) consisting of confined and mobile potentials are realized by the interference of orthogonal surface acoustic wave (SAW) beams in GaAs quantum wells. Photoluminescence spectroscopy reveals that the DDs are characterized by a peculiar distribution of strain and piezoelectric fields dictated by the lattice symmetry, which is quite different from the one induced by a single SAW. We demonstrate the unique ability of DDs to control the flow of photogenerated electron-hole pairs and of photons by realizing an electronic switch based on SAWs.
Laser-induced photocurrent measurement in quasi-arrayed ZnS quantum dots
NASA Astrophysics Data System (ADS)
Mohanta, D.; Choudhury, A.
2005-03-01
Electron transfer from confined structures like quantum film, quantum wire or quantum dot has been studied in conjunction with photoexcitation. The present paper highlights photocurrent generation in the external circuit due to electron transport within the organized ZnS quantum dots by means of tunnelling through the thin dielectric matrix. The average size distribution of the particles was determined by X-ray diffraction (XRD) in consistency with high-resolution electron microscopy (TEM). We demonstrate measurable and sustainable photocurrent in the external circuit as a result of quantum charge transport within arrayed quantum dots excited by high-power photons. The nonlinearity nature of I- V response is marked by Coulomb blockade signature, which serves as a prerequisite for single electron device applications.
Silicon based quantum dot hybrid qubits
NASA Astrophysics Data System (ADS)
Kim, Dohun
2015-03-01
The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories under contract DE-AC04-94AL85000.
Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots
Beltran, AM; Ben, Teresa; Sales, David; Sanchez, AM; Ripalda, JM; Taboada, Alfonso G; Varela del Arco, Maria; Pennycook, Stephen J; Molina, S. I.
2011-01-01
We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.
Sized controlled synthesis, purification, and cell studies with silicon quantum dots.
Shiohara, Amane; Prabakar, Sujay; Faramus, Angelique; Hsu, Chia-Yen; Lai, Ping-Shan; Northcote, Peter T; Tilley, Richard D
2011-08-01
This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using (1)H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales. PMID:21727983
NASA Astrophysics Data System (ADS)
Fountoulakis, Antonios; Paspalakis, Emmanuel
2013-05-01
We study the potential for coherent transfer of a single electron between the ground states of two anharmonic coupled quantum dots using an adiabatic passage method. We consider the interaction of a quantum dot structure characterized by an asymmetric confining potential by two external electromagnetic fields. We use the method of stimulated Raman adiabatic passage (STIRAP) for control of the dynamics of the electron, and ultimately for succeeding the transfer of the electron from the initially occupied quantum dot to the other quantum dot. Results for several values of the parameters of the applied electromagnetic fields are presented, and we show that STIRAP can lead to efficient coherent single electron transfer for a wide range of these parameters.
Synthesis of CdSe quantum dots for quantum dot sensitized solar cell
Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.
2014-04-24
CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.
Colloidal quantum dots in solar cells
NASA Astrophysics Data System (ADS)
Nikolenko, L. M.; Razumov, Vladimir F.
2013-05-01
Published data on the use of colloidal quantum dots in solar cells are analyzed and generalized. Various types of solar cells, their design and principles of operation are considered. The key factors influencing parameters of these devices are discussed. The bibliography includes 184 references.
Nanocomposites of POC and quantum dots
NASA Astrophysics Data System (ADS)
Borriello, C.; Concilio, S.; Minarini, C.; Iannelli, P.; Di Luccio, T.
2012-07-01
New luminescent polymer nanocomposites were synthesized combining carbazole/oxadiazole copolymer (POC) and CdSe/ZnS quantum dots (QDs) surface passivated by ionic liquids. Ionic liquid ligands improve the photostability of QDs and their compatibility with polymer allowing the deposition of homogeneous nanocomposites films. The nanocomposites were characterized by UV and photoluminescence spectroscopy.
The luminescence properties of colloidal quantum dots
NASA Astrophysics Data System (ADS)
Mikhailov, I. I.; Tarasov, S. A.; Lamkin, I. I.; Y Andreev, M.; Solomonov, A. V.
2015-11-01
Luminescent properties of systems containing lead sulfide (PbS) nanoparticles deposited on substrates of porous silicon (p-Si), oxidized porous silicon (OPS) and have been studied. It was shown that structure of the matrix and its composition are of crucial importance affecting luminescence spectra of colloidal quantum dots by setting their radiation wavelength.
The Silicon:Colloidal Quantum Dot Heterojunction.
Masala, Silvia; Adinolfi, Valerio; Sun, Jon-Paul; Gobbo, Silvano Del; Voznyy, Oleksandr; Kramer, Illan J; Hill, Ian G; Sargent, Edward H
2015-12-01
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. PMID:26460732
Producing Quantum Dots by Spray Pyrolysis
NASA Technical Reports Server (NTRS)
Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius
2006-01-01
An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.
Quantum-dot infrared photodetectors: a review
NASA Astrophysics Data System (ADS)
Stiff-Roberts, Adrienne D.
2009-04-01
Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (>=150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep
2013-01-28
We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.
Unraveling the Mesoscopic Character of Quantum Dots in Nanophotonics.
Tighineanu, P; Sørensen, A S; Stobbe, S; Lodahl, P
2015-06-19
We provide a microscopic theory for semiconductor quantum dots that explains the pronounced deviations from the prevalent point-dipole description that were recently observed in spectroscopic experiments on quantum dots in photonic nanostructures. The deviations originate from structural inhomogeneities generating a large circular quantum current density that flows inside the quantum dot over mesoscopic length scales. The model is supported by the experimental data, where a strong variation of the multipolar moments across the emission spectrum of quantum dots is observed. Our work enriches the physical understanding of quantum dots and is of significance for the fields of nanophotonics, quantum photonics, and quantum-information science, where quantum dots are actively employed. PMID:26197011
Single-dot optical emission from ultralow density well-isolated InP quantum dots
Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.
2008-10-06
We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.
Sized controlled synthesis, purification, and cell studies with silicon quantum dots
NASA Astrophysics Data System (ADS)
Shiohara, Amane; Prabakar, Sujay; Faramus, Angelique; Hsu, Chia-Yen; Lai, Ping-Shan; Northcote, Peter T.; Tilley, Richard D.
2011-08-01
This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales.This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales. Electronic supplementary information (ESI) available. See DOI: 10.1039/c1nr10458f
Optical properties of quantum-dot-doped liquid scintillators
Aberle, C.; Li, J.J.; Weiss, S.; Winslow, L.
2014-01-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO. PMID:25392711
Non-Markovian full counting statistics in quantum dot molecules
Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming
2015-01-01
Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules. PMID:25752245
Optical properties of gallium arsenide-based self-assembled quantum dots and quantum dot lasers
NASA Astrophysics Data System (ADS)
Hinzer, Karin
2002-09-01
Three-dimensional confinement of carriers eliminates the problem of thermal spreading of carriers observed in higher-dimensional systems. Uniform self-assembled quantum dots (QDs) are obtained using the spontaneous islanding of highly strained III-V semiconductors grown with standard epitaxy. Visible stimulated emission has been obtained with red-emitting AlInAs QDs in AlGaAs barriers. Continuous (CW) threshold current densities below 100A/cm2 have been measured at low temperatures and QD material gain larger than 1.7 x 104 cm-1 demonstrate good material quality. Room temperature lasing has also been observed for higher threshold current densities. For longer wavelengths where the thermionic emission problem is less important, InAs/GaAs lasers can operate at room temperature for current densities below 100A/cm2 for wavelengths around 950 nm. The zero-dimensional transitions between confined electrons and holes in artificial atoms allow the observation of state-filling at relatively low level of material excitation. Lasing is observed in the upper QD shells for small gain media, and progress towards the QD ground states for longer cavity lengths. Gain may also be increased by including multiple layers of QDs in the active region. To understand the shell structure of AlInAs/AlGaAs QDs, we present results of interband spectroscopy of single Al0.36In0.64As/Al 0.33Ga0.67As self-assembled QDs. The single dot spectroscopy has been carried out at low temperature as a function of the excitation power and magnetic field up to 8 T. The emission spectra as a function of excitation power show two distinct groups of transitions which we associate with the recombination from ground and excited QD levels with a spacing of 70 meV. The application of magnetic field allows to identify the exciton emission as well as the emission from the bi-exciton, and charged exciton complexes with binding energies of 5 meV. The binding energies compare favorably with results of calculations. Artificial molecules are studied using coupled QD ensembles and single QD spectroscopy. The coupling between the zero-dimensional states is varied by changing the distance between two layers of stacked InAs/GaAs QDs. Energy level splitting larger than 30 meV of the symmetric and anti-symmetric states of the lowest confined shell are measured and are compared to theory.
Self organized quantum dots for 1.3 ?m photonic devices
NASA Astrophysics Data System (ADS)
Laemmlin, M.; Fiol, G.; Meuer, C.; Kuntz, M.; Hopfer, F.; Ledentsov, N. N.; Kovsh, A. R.; Bimberg, D.
2006-07-01
Nanotechnology is a driver for novel opto-electronic devices and systems. Nanosemiconductors like quantum dots allow controlled variation of fundamental electronic and optical properties by changing the size and shape of the nanostructures. This applies directly to self-organized quantum dots which find a versatile use in many kinds of photonic devices. Wavelength tunability, decreased laser threshold, scalability of gain by stacking quantum dot layers, low linewidth enhancement factor and temperature stability are consequences of three-dimensional carrier confinement in semiconductor quantum dots. Directly modulated lasers using quantum dots offer further advantages like strongly damped relaxation oscillations yielding low patterning effects in digital data transmission. Quantum dot mode-locked lasers feature a broad gain spectrum leading to ultra-short pulses with sub-ps width and a low alpha factor for low-chirp. Thereby, optical comb generators for the future 100G Ethernet are feasible. Semiconductor optical amplifiers based on quantum dots show advantages as compared to classical ones: broad bandwidth due to the inhomogeneous quantum dot size distribution, ultrafast gain recovery for high-speed amplification and small patterning in optical data transmission. We present our most recent results on temperature stable 10 Gb/s, 23-70C direct modulation of lasers, ultrafast 80 GHz and short 710 fs optical pulse combs with mode-locked lasers and semiconductor optical amplifiers showing ultrafast amplification of these optical combs as well as error-free 40 Gb/s data modulation, all based on a quantum dot gain medium.
Efficient Luminescence from Perovskite Quantum Dot Solids.
Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F; Sargent, Edward H
2015-11-18
Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids. PMID:26529572
Energy spectrum of D{sup 0} centre in a spherical Gaussian quantum dot
Boda, Aalu Chatterjee, Ashok
2015-05-15
The properties of a neutral hydrogenic donor (D{sup 0}) centres have been studied for a GaAs semiconductor quantum dot with the Gaussian confinement potential. The energy levels of the ground state (n = 1) and the excited states of both the first excited (n = 2) and second excited (n = 3) configurations have been calculated by variational method. It has been shown that the excited states of the (D{sup 0}) centre in quantum dot are bound for sufficiently strong confinement potential. The conditions of binding for the ground state as well as excited states have been determined as functions of the potential strength and quantum dot radius. The ground state electron energy is compared with those available in the literature.
Elastic fields of quantum dots in subsurface layers
NASA Astrophysics Data System (ADS)
Romanov, A. E.; Beltz, G. E.; Fischer, W. T.; Petroff, P. M.; Speck, J. S.
2001-04-01
In this work, models based on conventional small-strain elasticity theory are developed to evaluate the stress fields in the vicinity of a quantum dot or an ordered array of quantum dots. The models are based on three different approaches for solving the elastic boundary value problem of a misfitting inclusion embedded in a semi-infinite space. The first method treats the quantum dot as a point source of dilatation. In the second approach we approximate the dot as a misfitting oblate spheroid, for which exact analytic solutions are available. Finally, the finite element method is used to study complex, but realistic, quantum dot configurations such as cuboids and truncated pyramids. We evaluate these three levels of approximation by comparing the hydrostatic stress component near a single dot and an ordered array of dots in the presence of a free surface, and find very good agreement except in the immediate vicinity of an individual quantum dot.
Probing the quantum-classical connection with open quantum dots
NASA Astrophysics Data System (ADS)
Ferry, D. K.; Akis, R.; Brunner, R.
2015-10-01
Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. As a closed test bed, they provide a natural system with a very rich set of eigen-states. When coupled to the environment through a pair of quantum point contacts, each of which passes several modes, the original quantum environment evolves into a set of decoherent and coherent states, which eventually couple to the classical states discussed above. The manner of this connection is governed strongly by decoherence theory. The remaining coherent states possess all the properties of pointer states. Here, we discuss the quantum-classical connection and how it appears within the experimental world.
Background charges and quantum effects in quantum dots transport spectroscopy
NASA Astrophysics Data System (ADS)
Pierre, M.; Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.
2009-08-01
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background charge is enough to give lines of differential conductance in the stability diagram of the quantum dot, even within undistorted Coulomb diamonds. It also suppresses the current near degeneracy of the impurity charge, and yields negative differential lines far from this degeneracy. We compare this picture to two other accepted explanations for lines in diamonds, based respectively on the excitation spectrum of a quantum dot and on fluctuations of the density-of-states in the contacts. In order to discriminate between these models, we emphasize the specific features related to environmental charge traps. Finally we show that our model accounts very well for all the anomalous features observed in silicon nanowire quantum dots.
NASA Astrophysics Data System (ADS)
Lin, C. Y.; Ho, Y. K.
2011-08-01
The method of complex-coordinate rotation in a finite-element discrete variable representation is implemented to study the photoionization of hydrogen impurity in spherical quantum dots which are modelled by finite oscillator and Gaussian potentials. The level splitting and crossing of hydrogen impurities due to the variation of dot radii and confining potentials are presented, as well as the shifting down of the energy of hydrogenic impurity toward the combined energy of the free hydrogen and the amplitude of the confining potential. We illustrate the staircaselike behavior in ground and excited energy curves varying with dot radii. The variation of photoionization cross sections with photoelectron energies are given for several dot radii. The cross sections as functions of quantum-dot radii and confining potentials for specific photon energies showing resonancelike profiles are observed and discussed.
Lin, C. Y.; Ho, Y. K.
2011-08-15
The method of complex-coordinate rotation in a finite-element discrete variable representation is implemented to study the photoionization of hydrogen impurity in spherical quantum dots which are modelled by finite oscillator and Gaussian potentials. The level splitting and crossing of hydrogen impurities due to the variation of dot radii and confining potentials are presented, as well as the shifting down of the energy of hydrogenic impurity toward the combined energy of the free hydrogen and the amplitude of the confining potential. We illustrate the staircaselike behavior in ground and excited energy curves varying with dot radii. The variation of photoionization cross sections with photoelectron energies are given for several dot radii. The cross sections as functions of quantum-dot radii and confining potentials for specific photon energies showing resonancelike profiles are observed and discussed.
NASA Astrophysics Data System (ADS)
Elyasi, P.; SalmanOgli, A.
2014-05-01
This paper investigates GaAs/AlGaAs modified quantum dot nanocrystal and GaAs/AlGaAs/GaAs/AlGaAs quantum dot-quantum well heteronanocrystal. These quantum dots have been analyzed by the finite element numerical methods. Simulations carried out for state n=1, l=0, and m=0 which are original, orbital, and magnetic state of quantum numbers. The effects of variation in radius layers such as total radius, GaAs core, shell and AlGaAs barriers radius on the wavelength and emission coefficient are studied. For the best time, it has also investigated the effect of mole fraction on emission coefficient. Meanwhile, one of the problems in biological applications is alteration of the emission wavelength of a quantum dot by changing in its dimension. This problem will be resolved by changing in potential profile.
Mitigation of Quantum Dot Cytotoxicity by Microencapsulation
Romoser, Amelia; Ritter, Dustin; Majitha, Ravish; Meissner, Kenith E.; McShane, Michael; Sayes, Christie M.
2011-01-01
When CdSe/ZnS-polyethyleneimine (PEI) quantum dots (QDs) are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG) mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the first line of defense for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor. PMID:21814567
Exciton fine structure in coupled quantum dots
NASA Astrophysics Data System (ADS)
Lyanda-Geller, Y. B.; Reinecke, T. L.; Bayer, M.
2004-04-01
We have developed a theoretical treatment of exciton fine structure effects in coupled quantum dots. We find that the dominant contributions giving mixing of optically bright and dark states and anticrossings between them are (i) an anisotropic Zeeman interaction for the hole and (ii) the electron spin-orbit interaction at nonzero magnetic field. Detailed calculations are given for vertically coupled InAs/GaAs dots that give a framework for the interpretation of recent experimental results. We find that anticrossings arise from deviations from axial symmetry in these systems.
Interface optical phonons in spheroidal quantum dots
NASA Astrophysics Data System (ADS)
Comas, F.; Trallero-Giner, C.; Studart, N.; Marques, G. E.
2002-07-01
Interface optical phonons are studied in the case of a quantum dot (QD) with prolate and oblate spheroidal geometries within the dielectric continuum approach. We considered CdSe or CdS QDs imbedded in a host material which is modelled as an infinite medium. The surface optical phonon modes, the corresponding frequencies, and the electron-phonon interaction Hamiltonian are reported. Comparison is made with previous works which only considered strictly spherical dots. We conclude that deviations from the perfect spherical shape could be responsible for observable physical effects in Raman spectra.
NASA Astrophysics Data System (ADS)
Mukhopadhyay, Soma; Chatterjee, Ashok
1997-04-01
Using the Feynman-Haken variational path-integral formalism we obtain the polaronic correction to the ground-state energy of an electron bound to a positive Coulomb impurity in a polar semiconductor quantum dot with parabolic confinement in both two and three dimensions. We perform calculations for the entire range of the electron-phonon coupling constant and the Coulomb binding parameter and for arbitrary confinement length. We apply our results to several semiconductor quantum dots and show that the quantum-dot enhancement in the polaronic correction in some of these dots can be very large.
Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots
NASA Astrophysics Data System (ADS)
Sauvage, S.; Boucaud, P.; Julien, F. H.; Grard, J.-M.; Marzin, J.-Y.
1997-10-01
We have investigated the midinfrared absorption between confined levels of undoped InAs/GaAs quantum dots obtained by self-organized growth. The infrared absorption is measured by a photoinduced infrared spectroscopy. Quantum dots with different sizes are analyzed as a function of temperature, interband pump photon energy, intensity, and infrared polarization. We show that in the 90-250 meV energy range the quantum dots exhibit intraband absorption between confined levels, which are polarized along the growth axis as for usual conduction intersubband transitions in quantum wells. Intraband absorption is observed for either selective excitation of the dots or excitation via absorption in the wetting and GaAs layers. Based on the energy position and the temperature dependence, the infrared resonances are attributed to intraband transitions between confined holes and to bound-to-continuum transitions of electrons, which, respectively, shift to high and low energy as the dot size is decreased. The reported features are found in qualitative agreement with the theoretical predictions of Grundmann et al. [Phys. Rev. B 52, 11 969 (1995)].
Recent advances in long wavelength quantum dot based lasers
NASA Astrophysics Data System (ADS)
Ramdane, A.; Martinez, A.; Azouigui, S.; Cong, D.-Y.; Merghem, K.; Akrout, A.; Gosset, C.; Moreau, G.; Lelarge, F.; Dagens, B.; Provost, J.-G.; Accard, A.; Le Gouezigou, O.; Krestnikov, I.; Kovsh, A.; Fischer, M.
2008-02-01
This paper presents recent progress in the field of semiconductor lasers based on self-assembled quantum dots grown either on GaAs or InP substrates. Quantum dot (QD) based lasers are attracting a lot of interest owing to their remarkable optoelectronic properties that result from the three dimensional carrier confinement. They are indeed expected to exhibit much improved performance than that of quantum well devices. Extremely low threshold currents as well as high temperature stability have readily been demonstrated in the InAs/GaAs material system. The unique properties of quantum dot based active layers such as broad optical gain spectrum, high saturation output power, ultrafast gain dynamics and low loss are also very attractive for the realization of mode-locked lasers. Recent results in the field of directly modulated InAs/GaAs lasers emitting in the 1.3 ?m window are discussed. We report in particular on temperature independent linewidth enhancement factor (or Henry factor ? H) up to 85C. This is a key parameter which determines many laser dynamic properties. Optical feedback insensitive operation of specifically band-gap engineered devices, compatible with high bit rate isolator-less transmission is also reported at 1.55 ?m. Monolithic mode locked lasers based on InAs/InP quantum dashes have been investigated for 1.55 ?m applications. Subpicosecond pulse generation at very high repetition rates (> 100 GHz) is reported for self-pulsating one-section Fabry Perot devices. Specific applications based on these compact pulse generators including high bit rate clock recovery are discussed.
Tuning the optical properties of dilute nitride site controlled quantum dots
Juska, G.; Dimastrodonato, V.; Mereni, L. O.; Gocalinska, A.; Pelucchi, E.
2013-12-04
We show that deterministic control of the properties of pyramidal site-controlled quantum dots (QD) could be achieved by exposing the QD layer to nitrogen precursor unsymmetrical dimethylhydrazine (UDMHy). The properties that could be tuned include an expected emission reduction in dilute nitride materials, excitonic pattern (biexciton binding energy) and improved carrier confinement potential symmetry (reduced fine-structure splitting)
Coherent control of multipartite excitonic entanglement in quantum dot arrays
NASA Astrophysics Data System (ADS)
Rolon, Juan E.; Drut, Joaquin E.
2015-03-01
We propose a coherent control scheme for multipartite entanglement of exciton states in optically driven quantum dot arrays (QDAs) coupled by charge tunneling and resonant energy transfer (RET) processes. An adiabatic manipulation of the entanglement dynamics is devised by pulse shaping and time-dependent electric field sweeps. By varying the inter-dot distance and number of quantum dots (QDs) comprising the QDA, the excitonic qubit manifolds are obtained by a Feshbach projection over the resulting multilevel exciton configurations. We identify regimes in which the dynamics is confined to decoherence-free excitonic qubit manifolds taking into account spontaneous recombination and non-Markovian effects introduced by a phonon bath. We present results for entanglement monotones and measures such as the entanglement of formation and entanglement entropy for different QDA geometries and carrier injection conditions. Our results indicate that in spite of the effects of phonon-assisted relaxation, entanglement can be optimized and transferred between QDs by the controlled interplay of system geometry, pulse shaping, RET and carrier tunneling.
Theory of the Quantum Dot Hybrid Qubit
NASA Astrophysics Data System (ADS)
Friesen, Mark
2015-03-01
The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.
Nanoscale optimization of quantum dot solar sells
NASA Astrophysics Data System (ADS)
Li, Yanshu; Sergeev, Andrei; Vagidov, Nizami; Mitin, Vladimir; Sablon, Kimberly; State Univ of NY-Buffalo Team; Army Research Laboratory Team
2015-03-01
Quantum dots (QDs) offer possibilities for nanoscale control of photoelectron processes via engineering the band structure and potential profile. Nanoscale potential profile (potential barriers) and nanoscale band engineering (AlGaAs atomically thin barriers) effectively suppress the photoelectron capture to QDs. QDs also increase conversion efficiency of the above-bandgap photons due to extraction of electrons from QDs via Coulomb interaction with hot electrons that excited by high-energy photons. To study the effects of the band structure engineering and nanoscale potential barriers on the photovoltaic performance we fabricated 3- ?m base GaAs devices with various InAs quantum dot media and selective doping. All quantum dot devices show improvement in conversion efficiency compared with the reference cell. Quantum efficiency measurements allow us to associate the spectral characteristics of photoresponse enhancement with nanoscale structure of QD media. The dark current analysis provides valuable information about recombination in QD solar cells. The two-diode model well fit the scope of data and recovers the measured open circuit voltage.
Quantum Computation Using Optically Coupled Quantum Dot Arrays
NASA Technical Reports Server (NTRS)
Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)
1998-01-01
A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.
Charge-tunable indium gallium nitride quantum dots
NASA Astrophysics Data System (ADS)
Zhang, Lei; Teng, Chu-Hsiang; Ku, Pei-Cheng; Deng, Hui
2016-02-01
III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with noncryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin-based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures, and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-nitride quantum dots, opening a door to III-nitride-based spintronics and spin-qubit quantum information processing.
Systematic optimization of quantum junction colloidal quantum dot solar cells
NASA Astrophysics Data System (ADS)
Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Tang, Jiang; Kramer, Illan J.; Ning, Zhijun; Sargent, Edward H.
2012-10-01
The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1% under AM1.5 simulated solar illumination.
Entrapment in phospholipid vesicles quenches photoactivity of quantum dots
Generalov, Roman; Kavaliauskiene, Simona; Westrøm, Sara; Chen, Wei; Kristensen, Solveig; Juzenas, Petras
2011-01-01
Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers. PMID:21931483
NASA Astrophysics Data System (ADS)
Buljan, M.; Radi?, N.; Sancho-Paramon, J.; Janicki, V.; Grenzer, J.; Bogdanovi?-Radovi?, I.; Siketi?, Z.; Ivanda, M.; Utrobi?i?, A.; Hbner, R.; Weidauer, R.; Vale, V.; Endres, J.; Car, T.; Jer?inovi?, M.; Roko, J.; Bernstorff, S.; Holy, V.
2015-02-01
We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.
Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V
2015-02-13
We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells. PMID:25605224
Principles of conjugating quantum dots to proteins via carbodiimide chemistry
NASA Astrophysics Data System (ADS)
Song, Fayi; Chan, Warren C. W.
2011-12-01
The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein-quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.
Confinement of Fractional Quantum Hall States
NASA Astrophysics Data System (ADS)
Willett, Robert; Manfra, Michael; West, Ken; Pfeiffer, Loren
2008-03-01
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow channels in high density, ultra-high mobility heterostructures. Transport evidence for the persistence of a correlated state at filling fraction 5/3 is shown in channels of 2?m length but gated to near 0.3?m in width. The methods employed to achieve this confinement hold promise for interference devices proposed for studying potential non-Abelian statistics at filling fraction 5/2. R.L. Willett, M.J. Manfra, L.N. Pfeiffer, K.W. West, Appl. Phys. Lett. 91, 052105 (2007).
Quantum-dot-induced phase shift in a pillar microcavity
Young, A. B.; Hu, C. Y.; Rarity, J. G.; Oulton, R.; Thijssen, A. C. T.; Schneider, C.; Reitzenstein, S.; Kamp, M.; Hoefling, S.; Worschech, L.; Forchel, A.
2011-07-15
We perform high-resolution reflection spectroscopy of a quantum dot resonantly coupled to a pillar microcavity. We show the change in reflectivity as the quantum dot is tuned through the cavity resonance and measure the quantum-dot-induced phase shift using an ultrastable interferometer. The macroscopic phase shift we measure could be extended to the study of charged quantum dot pillar microcavity systems, where it could be exploited to realize a high-efficiency spin photon interface for hybrid quantum information schemes.
Charge transport in strongly coupled quantum dot solids.
Kagan, Cherie R; Murray, Christopher B
2015-12-01
The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design. PMID:26551016
Charge transport in strongly coupled quantum dot solids
NASA Astrophysics Data System (ADS)
Kagan, Cherie R.; Murray, Christopher B.
2015-12-01
The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.
InAs/GaAsSb quantum dot solar cells.
Hatch, Sabina; Wu, Jiang; Sablon, Kimberly; Lam, Phu; Tang, Mingchu; Jiang, Qi; Liu, Huiyun
2014-05-01
The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells (QDSCs) is analyzed using power-dependent and temperature-dependent photoluminescence. We demonstrate that placing the GaAsSb QW beneath the QDs forms type-II characteristics that initiate at 12% Sb composition. Current density-voltage measurements demonstrate a decrease in power efficiency with increasing Sb composition. This could be attributed to increased valence band potential in the GaAsSb QW that subsequently limits hole transportation in the QD region. To reduce the confinement energy barrier, a 2 nm GaAs wall is inserted between GaAsSb QW and InAs QDs, leading to a 23% improvement in power efficiency for QDSCs. PMID:24922376
Longitudinal wave function control in single quantum dots with an applied magnetic field
NASA Astrophysics Data System (ADS)
Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai
2015-01-01
Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.
Longitudinal wave function control in single quantum dots with an applied magnetic field
Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai
2015-01-01
Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018
Facile labeling of lipoglycans with quantum dots
Morales Betanzos, Carlos; Gonzalez-Moa, Maria; Johnston, Stephen Albert; Svarovsky, Sergei A.
2009-02-27
Bacterial endotoxins or lipopolysaccharides (LPS) are among the most potent activators of the innate immune system, yet mechanisms of their action and in particular the role of glycans remain elusive. Efficient non-invasive labeling strategies are necessary for studying interactions of LPS glycans with biological systems. Here we report a new method for labeling LPS and other lipoglycans with luminescent quantum dots. The labeling is achieved by partitioning of hydrophobic quantum dots into the core of various LPS aggregates without disturbing the native LPS structure. The biofunctionality of the LPS-Qdot conjugates is demonstrated by the labeling of mouse monocytes. This simple method should find broad applicability in studies concerned with visualization of LPS biodistribution and identification of LPS binding agents.
Quantum dot/glycol chitosan fluorescent nanoconjugates
NASA Astrophysics Data System (ADS)
Mansur, Alexandra AP; Mansur, Herman S.
2015-04-01
In this study, novel carbohydrate-based nanoconjugates combining chemically modified chitosan with semiconductor quantum dots (QDs) were designed and synthesised via single-step aqueous route at room temperature. Glycol chitosan (G-CHI) was used as the capping ligand aiming to improve the water solubility of the nanoconjugates to produce stable and biocompatible colloidal systems. UV-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and Fourier transform infrared (FTIR) spectroscopy were used to characterise the synthesis and the relative stability of biopolymer-capped semiconductor nanocrystals. The results clearly demonstrated that the glycol chitosan derivative was remarkably effective at nucleating and stabilising semiconductor CdS quantum dots in aqueous suspensions under acidic, neutral, and alkaline media with an average size of approximately 2.5 nm and a fluorescent activity in the visible range of the spectra.
Separability and dynamical symmetry of Quantum Dots
Zhang, P.-M.; Zou, L.-P.; Horvathy, P.A.; Gibbons, G.W.
2014-02-15
The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.
Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles
NASA Astrophysics Data System (ADS)
Semina, M. A.; Golovatenko, A. A.; Rodina, A. V.
2016-01-01
We report on a theoretical study of the hole states in II-IV quantum dots of spherical and ellipsoidal shapes, described by smooth potential confinement profiles that can be modeled by Gaussian functions in all three dimensions. The universal dependencies of the hole energy, g factor, and localization length on the quantum dot barrier height, as well as the ratio of effective masses of the light and heavy holes are presented for the spherical quantum dots. The splitting of the fourfold degenerate ground state into two doublets is derived for anisotropic (oblate or prolate) quantum dots. Variational calculations are combined with numerical ones in the framework of the Luttinger Hamiltonian. Constructed trial functions are optimized by comparison with the numerical results. The effective hole g factor is found to be independent of the quantum dot size and barrier height and is approximated by a simple universal expression depending only on the effective mass parameters. The results can be used for interpreting and analyzing experimental spectra measured in various structures with quantum dots of different semiconductor materials.
Peptide Coated Quantum Dots for Biological Applications
Iyer, Gopal; Pinaud, Fabien; Tsay, James; Li, Jack J.; Bentolila, Laurent A.; Michalet, Xavier; Weiss, Shimon
2011-01-01
Quantum dots (QDOTs) have been widely recognized by the scientific community and the biotechnology industry, as witnessed by the exponential growth of this field in the past several years. We describe the synthesis and characterization of visible and near infrared QDotsa critical step for engineering organic molecules like proteins and peptides for building nanocomposite materials with multifunctional properties suitable for biological applications. PMID:17181021
Effect of shells on photoluminescence of aqueous CdTe quantum dots
Yuan, Zhimin; Yang, Ping
2013-07-15
Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.
NASA Astrophysics Data System (ADS)
Saravanamoorthy, S. N.; Peter, A. John
2015-06-01
Binding energies of the exciton and the interband optical transition energies are studied in a CdSe/Pb1-xCdxSe/CdSe spherical quantum dot-quantum well nanostructure taking into account the geometrical confinement effect. The core and shell are taken as the same material. The initial and final states of energy and the overlap integrals of electron and hole wave functions are determined by the oscillator strength. The oscillator strength and the radiative transition life time with the dot radius are investigated for various Cd alloy content in the core and shell materials.
Exciton dephasing in quantum dot molecules.
Borri, P; Langbein, W; Woggon, U; Schwab, M; Bayer, M; Fafard, S; Wasilewski, Z; Hawrylak, P
2003-12-31
We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction. PMID:14754087
Relaxation dynamics in correlated quantum dots
Andergassen, S.; Schuricht, D.; Pletyukhov, M.; Schoeller, H.
2014-12-04
We study quantum many-body effects on the real-time evolution of the current through quantum dots. By using a non-equilibrium renormalization group approach, we provide analytic results for the relaxation dynamics into the stationary state and identify the microscopic cutoff scales that determine the transport rates. We find rich non-equilibrium physics induced by the interplay of the different energy scales. While the short-time limit is governed by universal dynamics, the long-time behavior features characteristic oscillations as well as an interplay of exponential and power-law decay.
Quantum phase transition in a multilevel dot.
Hofstetter, Walter; Schoeller, Herbert
2002-01-01
We discuss electronic transport through a lateral quantum dot close to the singlet-triplet degeneracy in the case of a single conduction channel per lead. By applying the numerical renormalization group, we obtain rigorous results for the linear conductance and the density of states. A new quantum phase transition of the Kosterlitz-Thouless-type is found, with an exponentially small energy scale T(*) close to the degeneracy point. Below T(*), the conductance is strongly suppressed, corresponding to a universal dip in the density of states. This explains recent transport measurements. PMID:11800978
Surface distortion effects on quantum dot helium
NASA Astrophysics Data System (ADS)
Encinosa, Mario; Etemadi, Babak
1999-06-01
The Schrdinger equation for a quantum mechanical particle constrained to a surface includes a potential term dependent on surface curvature. We use differential forms to derive this term and employ Monge representations for two surfaces to obtain specific expressions for the potential. We calculate the first order perturbative effect of this potential on the ground state energy of model quantum dot helium. We find that the energy shift can be sensitive to the detailed shape of the surface distortion. This dependence arises from the Coulomb repulsion between the electron pair, which causes each electron to preferentially sample (or not sample) regions where physical curvature leads to comparatively large values of the distortion potential.
Quantum dot spectroscopy using a single phosphorus donor
NASA Astrophysics Data System (ADS)
Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.
2015-12-01
Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.
Few-electron physics in Double quantum dots in carbon nanotubes
NASA Astrophysics Data System (ADS)
von Stecher, Javier; Wunsch, Bernhard; Lukin, Mikahil; Demler, Eugene; Rey, Ana Maria
2010-03-01
Recent experimental progress on few-electron quantum dots (also known as artificial atoms) has allowed the controllable manipulation of the spin degrees of freedom of the confined electrons. Such control is at the heart of semiconductor-based spintronics and quantum-information proposals. Double-well quantum dot in semiconducting carbon nanotubes exhibit rich physics due to the additional valley degree of freedom. Here, we study the few-electron spectrum of a carbon-nanotube double quantum dot with spin-orbit coupling. We find that Coulomb interactions can cause strong correlation effects which lead to different ground state transitions. In particular, we show that such strong correlations can produce the disappearance of the Pauli blockade in transport experiments and an interaction-induced ferromagnetic ground state.
Coherent control and decoherence of single semiconductor quantum dots in a microcavity
NASA Astrophysics Data System (ADS)
Flagg, Edward B., II
Semiconductor quantum dots tightly confine excited electron-hole pairs, called excitons, resulting in discrete energy levels similar to those of single atoms. Transition energies in the visible or near-infrared make quantum dots suitable for many applications in quantum optics and quantum information science, but to take advantage of all the properties of quantum dot emission, it is necessary to excite them coherently which has been a great challenge due to background scattering of the excitation laser. This dissertation presents the first coherent control of a single quantum dot with observation of its resonance fluorescence and decoherence phenomena. Strong continuous-wave excitation causes the dot to undergo several Rabi oscillations before emitting. These are visible as oscillations in the first- and second-order correlation functions of the emission, and the quantum dot states are "dressed", resulting in a Mollow triplet in the emission spectrum. Some resonantly excited dots, in addition to resonance fluorescence, also emit light from excited states several meV higher in energy. Such up-conversion fits existing theories of decoherence but has never been directly observed before. The up-conversion intensity is shown to be described well by a fairly simple three-level model with single-phonon absorption. The coherent phenomena of resonance fluorescence and the decoherence due to up-conversion paint a dual picture of single quantum dots wherein they can sometimes be treated as an ideal two-level system, but their interactions with the host crystal can lead to many complex behaviors.
Study of intersubband transition in quantum dots and quantum dot infrared photodetectors
NASA Astrophysics Data System (ADS)
Jiang, Xudong; Li, Sheng S.; Tidrow, M. Z.
In this paper the intersubband optical transitions in quantum dots are studied. Theoretical calculations of peak wavelengths and oscillator strengths of the transitions from the bound to first and second excited states were made for the In xGa 1- xAs/GaAs and InAs/Al xGa 1- xAs systems. The results show that transition from the ground to the first excited state in the growth-direction polarization has the largest absorption. The results of our calculations were found to be in good agreement with the observed peak detection wavelengths of the quantum dot infrared photodetectors (QDIPs). The application of quantum dots structures for the mid- and long-wavelength infrared detection is also discussed.
Quantum confinement in Si and Ge nanostructures: effect of crystallinity
NASA Astrophysics Data System (ADS)
Barbagiovanni, Eric G.; Lockwood, David J.; Costa Filho, Raimundo N.; Goncharova, Lyudmila V.; Simpson, Peter J.
2013-10-01
We look at the relationship between the preparation method of Si and Ge nanostructures (NSs) and the structural, electronic, and optical properties in terms of quantum confinement (QC). QC in NSs causes a blue shift of the gap energy with decreasing NS dimension. Directly measuring the effect of QC is complicated by additional parameters, such as stress, interface and defect states. In addition, differences in NS preparation lead to differences in the relevant parameter set. A relatively simple model of QC, using a `particle-in-a-box'-type perturbation to the effective mass theory, was applied to Si and Ge quantum wells, wires and dots across a variety of preparation methods. The choice of the model was made in order to distinguish contributions that are solely due to the effects of QC, where the only varied experimental parameter was the crystallinity. It was found that the hole becomes de-localized in the case of amorphous materials, which leads to stronger confinement effects. The origin of this result was partly attributed to differences in the effective mass between the amorphous and crystalline NS as well as between the electron and hole. Corrections to our QC model take into account a position dependent effective mass. This term includes an inverse length scale dependent on the displacement from the origin. Thus, when the deBroglie wavelength or the Bohr radius of the carriers is on the order of the dimension of the NS the carriers `feel' the confinement potential altering their effective mass. Furthermore, it was found that certain interface states (Si-O-Si) act to pin the hole state, thus reducing the oscillator strength.
Using Quantum Confinement to Uniquely Identify Devices
NASA Astrophysics Data System (ADS)
Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.
2015-11-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature.
Using Quantum Confinement to Uniquely Identify Devices.
Roberts, J; Bagci, I E; Zawawi, M A M; Sexton, J; Hulbert, N; Noori, Y J; Young, M P; Woodhead, C S; Missous, M; Migliorato, M A; Roedig, U; Young, R J
2015-01-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature. PMID:26553435
Using Quantum Confinement to Uniquely Identify Devices
Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.
2015-01-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature. PMID:26553435
NASA Astrophysics Data System (ADS)
Hayrapetyan, D. B.; Kazaryan, E. M.; Kotanjyan, T. V.; Tevosyan, H. K.
2015-06-01
The electronic states and direct interband light absorption are studied in the cylindrical quantum dot with Morse confining potential made of GaAs in the presence of parallel electrical and magnetic fields. Within the framework of perturbation theory and variation method expressions are obtained for the particle energy spectrum. The effect of the external fields on direct interband light absorption of cylindrical quantum dot is investigated. Selection rules are obtained at presence of parallel electrical and magnetic fields. The dependence of the absorption threshold on geometrical parameters of quantum dots and intensities of external fields is obtained.
NASA Astrophysics Data System (ADS)
Juska, G.; Dimastrodonato, V.; Mereni, L. O.; Chung, T. H.; Gocalinska, A.; Pelucchi, E.; Van Hattem, B.; Ediger, M.; Corfdir, P.
2014-05-01
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5-?m pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern, and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Second, the formation of a formerly unidentified type of InGaAs nanostructuresthree corner quantum dotsis demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects.
Light-Emitting Quantum Dot Transistors: Emission at High Charge Carrier Densities
2015-01-01
For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433
Light-emitting quantum dot transistors: emission at high charge carrier densities.
Schornbaum, Julia; Zakharko, Yuriy; Held, Martin; Thiemann, Stefan; Gannott, Florentina; Zaumseil, Jana
2015-03-11
For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433
Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
NASA Astrophysics Data System (ADS)
Huang, Lirong; Yu, Yi; Tian, Peng; Huang, Dexiu
2009-01-01
The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design.
Quantum dot solar cells: The surface plays a core role
NASA Astrophysics Data System (ADS)
Milliron, Delia J.
2014-08-01
Mastering the impact of surface chemistry on the electronic properties and stability of colloidal quantum dots enables the realization of architectures with enhanced photovoltaic performance and air stability.
Terahertz transmission through rings of quantum dots-nanogap
NASA Astrophysics Data System (ADS)
Tripathi, Laxmi-Narayan; Bahk, Young-Mi; Choi, Geunchang; Han, Sanghoon; Park, Namkyoo; Kim, Dai-Sik
2016-03-01
We report resonant funneling of terahertz (THz) waves through (9 ± 1) nm wide quantum dots-nanogap of cadmium selenide quantum dots silver nanogap metamaterials. We observed a giant THz intensity enhancement (∼104) through the quantum dots-nanogap at the resonant frequency. We, further report the experimentally measured effective mode indices for these metamaterials. A finite difference time domain simulation of the nanogap enabled by the quantum dots supports the experimentally measured THz intensity enhancement across the nanogap. We propose that these low effective mode index terahertz resonators will be useful as bio/chemical sensors, gain-enhanced antennas, and wave guides.
Imaging ligand-gated ion channels with quantum dots
NASA Astrophysics Data System (ADS)
Tomlinson, I. D.; Orndorff, Rebecca L.; Gussin, Hélène; Mason, John N.; Blakely, Randy D.; Pepperberg, David R.; Rosenthal, Sandra J.
2007-02-01
In this paper we report two different methodologies for labeling ligand-gated receptors. The first of these builds upon our earlier work with serotonin conjugated quantum dots and our studies with pegilated quantum dots to reduce non specific binding. In this approach a pegilated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphillic polymer derivative of poly acrylamide. These conjugates were used to image the GABA C receptor in oocytes. An alternative approach was used to image tissue sections to study nicotinic acetylcholine receptors in the neuro muscular junction with biotinylated Bungerotoxin and streptavidin coated quantum dots.
Enhanced performance of quantum dot solar cells based on type II quantum dots
Xu, Feng; Yang, Xiao-Guang; Luo, Shuai; Lv, Zun-Ren; Yang, Tao
2014-10-07
The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open circuit voltage (V{sub oc}) as well as conversion efficiency in a type II QDSC, compared to type I QDSCs. The improved V{sub oc} and efficiency are mainly attributed to the much longer Auger recombination lifetime in type II QDs. Moreover, the influence of the carrier lifetime on devices' performance is discussed and clarified. In addition, an explicit criterion to determine the role of quantum dots in solar cells is put forward.
Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.
2011-12-23
The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.
Electron Spin Coherence Times in Si/SiGe Quantum Dots
NASA Astrophysics Data System (ADS)
Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.
2014-03-01
Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).
Inverted singlet-triplet qubit coded on a two-electron double quantum dot
NASA Astrophysics Data System (ADS)
Mehl, Sebastian; DiVincenzo, David P.
2014-11-01
The sz=0 spin configuration of two electrons confined at a double quantum dot (DQD) encodes the singlet-triplet qubit (STQ). We introduce the inverted STQ (ISTQ) that emerges from the setup of two quantum dots (QDs) differing significantly in size and out-of-plane magnetic fields. The strongly confined QD has a two-electron singlet ground state, but the weakly confined QD has a two-electron triplet ground state in the sz=0 subspace. Spin-orbit interactions act nontrivially on the sz=0 subspace and provide universal control of the ISTQ together with electrostatic manipulations of the charge configuration. GaAs and InAs DQDs can be operated as ISTQs under realistic noise conditions.
Reeves, Kyle G; Schleife, Andr; Correa, Alfredo A; Kanai, Yosuke
2015-10-14
The role of surface termination on phonon-mediated relaxation of an excited electron in quantum dots was investigated using first-principles simulations. The surface terminations of a silicon quantum dot with hydrogen and fluorine atoms lead to distinctively different relaxation behaviors, and the fluorine termination shows a nontrivial relaxation process. The quantum confined electronic states are significantly affected by the surface of the quantum dot, and we find that a particular electronic state dictates the relaxation behavior through its infrequent coupling to neighboring electronic states. Dynamical fluctuation of this electronic state results in a slow shuttling behavior within the manifold of unoccupied electronic states, controlling the overall dynamics of the excited electron with its characteristic frequency of this shuttling behavior. The present work revealed a unique role of surface termination, dictating the hot electron relaxation process in quantum-confined systems in the way that has not been considered previously. PMID:26331672
Hybrid passivated colloidal quantum dot solids
NASA Astrophysics Data System (ADS)
Ip, Alexander H.; Thon, Susanna M.; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, Andr J.; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H.
2012-09-01
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.
Quantum dot spin cellular automata for realizing a quantum processor
NASA Astrophysics Data System (ADS)
Bayat, Abolfazl; Creffield, Charles E.; Jefferson, John H.; Pepper, Michael; Bose, Sougato
2015-10-01
We show how single quantum dots, each hosting a singlet-triplet qubit, can be placed in arrays to build a spin quantum cellular automaton. A fast (10 ns) deterministic coherent singlet-triplet filtering, as opposed to current incoherent tunneling/slow-adiabatic based quantum gates (operation time 300 ns), can be employed to produce a two-qubit gate through capacitive (electrostatic) couplings that can operate over significant distances. This is the coherent version of the widely discussed charge and nano-magnet cellular automata, and would increase speed, reduce dissipation, and perform quantum computation while interfacing smoothly with its classical counterpart. This combines the best of two worldsthe coherence of spin pairs known from quantum technologies, and the strength and range of electrostatic couplings from the charge-based classical cellular automata. Significantly our system has zero electric dipole moment during the whole operation process, thereby increasing its charge dephasing time.
Quantum confinement in transition metal oxide quantum wells
Choi, Miri; Lin, Chungwei; Butcher, Matthew; Posadas, Agham B.; Demkov, Alexander A.; Rodriguez, Cesar; Zollner, Stefan; He, Qian; Borisevich, Albina Y.
2015-05-11
We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.
In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots
NASA Astrophysics Data System (ADS)
Usman, Muhammad
2011-11-01
The design of optical devices such as lasers and semiconductor optical amplifiers for telecommunication applications requires polarization insensitive optical emissions in the region of 1500 nm. Recent experimental measurements of the optical properties of stacked quantum dots have demonstrated that this can be achieved via exploitation of inter-dot strain interactions. In particular, the relatively large aspect ratio (AR) of quantum dots in the optically active layers of such stacks provide a two-fold advantage, both by inducing a red shift of the gap wavelength above 1300 nm, and increasing the TM001-mode, thereby decreasing the anisotropy of the polarization response. However, in large aspect ratio quantum dots (AR > 0.25), the hole confinement is significantly modified compared with that in lower AR dotsthis modified confinement is manifest in the interfacial confinement of holes in the system. Since the contributions to the ground state optical intensity (GSOI) are dominated by lower-lying valence states, we therefore propose that the room temperature GSOI be a cumulative sum of optical transitions from multiple valence states. This then extends previous theoretical studies of flat (low AR) quantum dots, in which contributions arising only from the highest valence state or optical transitions between individual valence states were considered. The interfacial hole distributions also increases in-plane anisotropy in tall (high AR) quantum dots (TE110 ? TE-110), an effect that has not been previously observed in flat quantum dots. Thus, a directional degree of polarization (DOP) should be measured (or calculated) to fully characterize the polarization response of quantum dot stacks. Previous theoretical and experimental studies have considered only a single value of DOP: either [110] or [-110].
Exciton shelves for charge and energy transport in third-generation quantum-dot devices
NASA Astrophysics Data System (ADS)
Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant
2014-03-01
Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.
Lifetime blinking in nonblinking nanocrystal quantum dots
Galland, Christophe; Ghosh, Yagnaseni; Steinbrck, Andrea; Hollingsworth, Jennifer A.; Htoon, Han; Klimov, Victor I.
2012-01-01
Nanocrystal quantum dots are attractive materials for applications as nanoscale light sources. One impediment to these applications is fluctuations of single-dot emission intensity, known as blinking. Recent progress in colloidal synthesis has produced nonblinking nanocrystals; however, the physics underlying blinking suppression remains unclear. Here we find that ultra-thick-shell CdSe/CdS nanocrystals can exhibit pronounced fluctuations in the emission lifetimes (lifetime blinking), despite stable nonblinking emission intensity. We demonstrate that lifetime variations are due to switching between the neutral and negatively charged state of the nanocrystal. Negative charging results in faster radiative decay but does not appreciably change the overall emission intensity because of suppressed nonradiative Auger recombination for negative trions. The Auger process involving excitation of a hole (positive trion pathway) remains efficient and is responsible for charging with excess electrons, which occurs via Auger-assisted ionization of biexcitons accompanied by ejection of holes. PMID:22713750
Energy levels of bilayer graphene quantum dots
NASA Astrophysics Data System (ADS)
da Costa, D. R.; Zarenia, M.; Chaves, Andrey; Farias, G. A.; Peeters, F. M.
2015-09-01
Within a tight binding approach we investigate the energy levels of hexagonal and triangular bilayer graphene (BLG) quantum dots (QDs) with zigzag and armchair edges. We study AA- and AB- (Bernal) stacked BLG QDs and obtain the energy levels in both the absence and the presence of a perpendicular electric field (i.e., biased BLG QDs). Our results show that the size dependence of the energy levels is different from that of monolayer graphene QDs. The energy spectrum of AB-stacked BLG QDs with zigzag edges exhibits edge states which spread out into the opened energy gap in the presence of a perpendicular electric field. We found that the behavior of these edges states is different for the hexagonal and triangular geometries. In the case of AA-stacked BLG QDs, the electron and hole energy levels cross each other in both cases of armchair and zigzag edges as the dot size or the applied bias increases.
Measurement Back-Action in Stacked Graphene Quantum Dots.
Bischoff, D; Eich, M; Zilberberg, O; Rssler, C; Ihn, T; Ensslin, K
2015-09-01
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher-order quantum mechanical back-action mechanisms. PMID:26280388
Single-electron quantum dots in silicon MOS structures
NASA Astrophysics Data System (ADS)
Khoury, M.; Gunther, A.; Mili?i?, S.; Rack, J.; Goodnick, S. M.; Vasileska, D.; Thornton, T. J.; Ferry, D. K.
We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.
Colloidal Organohalide Perovskite Nanoplatelets Exhibiting Quantum Confinement.
Tyagi, Pooja; Arveson, Sarah M; Tisdale, William A
2015-05-21
We prepare colloidal nanoplatelets of methylammonium lead bromide (MAPbBr3) perovskite and compare the optical signatures of excitons in these two-dimensional systems to spherical perovskite nanocrystals and the corresponding bulk phase. We find that excitonic features that had previously been attributed to quantum confinement in MAPbBr3 nanocrystals are in fact a property of the bulk perovskite phase. Furthermore, we find that higher-energy absorption features originate from two-dimensional nanoplatelets, which are present in the nanocrystal reaction product. Upon further purification, we obtain colloidal nanoplatelets with predominantly single unit cell thickness and submicron lateral dimensions, which are stable in solution and exhibit a sharp excitonic absorption feature 0.5 eV blue-shifted from that of the three-dimensional bulk MAPbBr3 phase, representing a new addition to the growing family of colloidal two-dimensional nanostructures. PMID:26263268
Quantum confinement in single layer a-Si:H films
Koehler, S.A.; Fritzsche, H.
1996-12-31
Quantum confinement effects in the transmission spectrum of thin amorphous silicon, a-Si:H, films require a coherence length comparable to the film thickness, as well as good film homogeneity. After a careful investigation, the authors conclude that there is no quantum confinement in single layer a-Si:H films at room temperature.
Electrostatically defined silicon quantum dots with counted antimony donor implants
NASA Astrophysics Data System (ADS)
Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.
2016-02-01
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
The Effects of Electric Field on a Triangular Bound Potential Quantum Dot Qubit
NASA Astrophysics Data System (ADS)
Yin, Ji-wen; Yu, Yi-fu; Li, Hong-juan
2014-10-01
On the condition of electron-LO-phonon strong coupling in a triangular bound potential quantum dot, we obtain the eigenenergy and eigenfuctions of the ground state and the first-excited state by using the Pekar type of variational method. This two-level system in a quantum dot can be employed as a qubit, which is a basic unit for quantum information operation and storage. Our numerical results indicate that the oscillation period of this qubit is an increasing function of the confinement length and the electric field. The influence of electric field on the period of oscillation becomes greater when the confinement length is increased. The electron probability density of the qubit is an increasing function of the electron-LO-phonon coupling constant. On the contrary, it is a decreasing function of the electric field. Meanwhile, the electron probability density varies periodically with the polar angle.
Size-selected compound semiconductor quantum dots by nanoparticle conversion
NASA Astrophysics Data System (ADS)
Wacaser, Brent A.; Dick, Kimberly A.; Zanolli, Zeila; Gustafsson, Anders; Deppert, Knut; Samuelson, Lars
2007-03-01
We have developed a novel technology, called nanoparticle conversion, for producing compound semiconductor quantum dots (QDs) in which the dot size, surface density, position, and the materials system are all independently controlled. Nanoparticle conversion also lends itself to spatially controlled positioning of QDs. To demonstrate this technology we report the formation of InP QDs using nanoparticle conversion. We have produced QDs on substrates of different types by converting randomly and lithographically positioned nanoparticles into compound semiconductors in a chemical vapour deposition system. Electron microscopy and atomic force microscopy measurements reveal that the morphology of these QDs is similar to that of QDs produced by other techniques. Photo- and cathodoluminescence measurements show that the converted nanoparticles exhibit properties and behaviours typical of semiconductor QDs. These include quantum confinement, free-to-bound recombination and blinking. Production of multi-component QDs like InP, GaN, and InAsP on various substrates like Si, SiO2, and sapphire show that this technology can produce a wide variety of different types of QD on different substrates with minimal need for process optimization.
Colloidal quantum dot photovoltaics: a path forward.
Kramer, Illan J; Sargent, Edward H
2011-11-22
Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun's broad spectrum. CQD materials' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. PMID:21967723
Solution-based synthesis of high yield CZTS (Cu2ZnSnS4) spherical quantum dots
NASA Astrophysics Data System (ADS)
Rajesh, G.; Muthukumarasamy, N.; Subramanian, E. P.; Venkatraman, M. R.; Agilan, S.; Ragavendran, V.; Thambidurai, M.; Velumani, S.; Yi, Junsin; Velauthapillai, Dhayalan
2015-01-01
High yield CZTS quantum dots have been synthesized using simple precursors by chemical precipitation technique. Formation mechanism of CZTS spherical quantum dots also has been investigated. According to the mechanism, copper sulfide nuclei firstly forms, and serves as the starting point for the nucleation and growth of CZTS. X-ray diffraction pattern, X-ray photoelectron spectra (XPS) and Raman spectra reveals the formation of pure kesterite structure Cu2ZnSnS4 nanoparticles. HRTEM analysis reveals the formation of CZTS quantum dots with an average particle size of ?8.3 nm. The elemental distribution of CZTS quantum dots studied using STEM elemental mapping reveals that Cu, Zn, Sn and S are present in the sample. The photoluminescence spectra of CZTS exhibit a broad red emission band at 657 nm. The optical band gap is shifted to the higher energy side and it shows the presence of quantum confinement effect.
Inversion of hysteresis in quantum dot controlled quantum-wire transistor
NASA Astrophysics Data System (ADS)
Mller, C. R.; Worschech, L.; Forchel, A.
2009-05-01
In a quantum-wire transistor, pronounced floating-gate function of quantum dots is demonstrated with large threshold hysteresis exceeding 1.5 V. The charge state of the quantum dots is electrically controlled and, by applying a critical bias voltage along the quantum wire, the charging mechanism of the quantum dots is deactivated or, for bias voltages above this critical bias point, even inverted. It is shown that the charging as well as discharging of the quantum dots can be selectively switched off; i.e., the floating-gate function of the quantum dots is suppressed. The inversion of the hysteresis is explained within the framework of a capacitor model and the control of the charging mechanism is attributed to a dynamic gate efficiency of the quantum wire, which can be either larger or smaller than the quantum dot gate efficiency.
NASA Astrophysics Data System (ADS)
Hayrapetyan, D. B.; Kazaryan, E. M.; Sarkisyan, H. A.
2016-01-01
An electron gas in a strongly oblated ellipsoidal quantum dot with impenetrable walls in the presence of external magnetic field is considered. Influence of the walls of the quantum dot is assumed to be so strong in the direction of the minor axis (the OZ axis) that the Coulomb interaction between electrons in this direction can be neglected and considered as two-dimensional. On the basis of geometric adiabaticity we show that in the case of a few-particle gas a powerful repulsive potential of the quantum dot walls has a parabolic form and localizes the gas in the geometric center of the structure. Due to this fact, conditions occur to implement the generalized Kohn theorem for this system. The parabolic confinement potential depends on the geometry of the ellipsoid, which allows, together with the magnetic field to control resonance frequencies of transitions by changing the geometric dimensions of the QD.
Quantum dot multi-section light emitters
NASA Astrophysics Data System (ADS)
Xin, Yongchun
2006-04-01
InxGa1-xAs quantum dot (QD) lasers grown on a GaAs substrate with 1.3-mum emission are currently a subject of strong interest, and the work presented here extends this research to the field of multi-section light emitters. Multi-section QD devices are useful for materials characterization and their flexibility in layout makes multi-functional in their device performance. This dissertation discusses the use of multi-section light emitters to produce new methods in the optical characterization of materials, QD mode-locked lasers (MLLs) and QD super-luminescent light emitting diodes (SLEDs). An improved, alternate approach to the "multi-section method" for the measurement of optical gain and absorption is presented, and for the first time, low noise, accurate gain and absorption spectra under real CW working conditions are obtained. With the improved multi-section method and MLL characteristic testing, the relationship between quantum dot MLL performance and quantum dot parameters is studied. With the highly flexible, reconfigurable multi-section approach, we demonstrate novel designs of QD MLLs and SLEDs. The multi-section MLL significantly increases the peak pulsed power (> 45%) and improves the pulse width (>35%) of the device. With the ability to change absorber position in the optical cavity at will, harmonic mode-locking from 7.2 GHz to 51 GHz is achieved. The ridge-waveguide multi-section QD SLED allows independent adjustment of the power and the spectral bandwidth relative to the ground state (GS) and the excited state (ES) of the QD and demonstrates simultaneous ultra-wide 3-dB bandwidth (> 150 nm) and an output power greater than 1 mW with a uniform multi-stack QD structure.
Precise shape engineering of epitaxial quantum dots by growth kinetics
NASA Astrophysics Data System (ADS)
Bietti, Sergio; Bocquel, Juanita; Adorno, Silvia; Mano, Takaaki; Keizer, Joris G.; Koenraad, Paul M.; Sanguinetti, Stefano
2015-08-01
We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy. Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.
Power-law photoluminescence decay in quantum dots
Král, Karel; Menšík, Miroslav
2014-05-15
Some quantum dot samples show a long-time (power-law) behavior of their luminescence intensity decay. This effect has been recently explained as being due to a cooperation of many tunneling channels transferring electrons from small quantum dots with triplet exciton to quantum dots at which the electrons can recombine with the holes in the valence band states. In this work we show that the long-time character of the sample luminescence decay can also be caused by an intrinsic property of a single dot, namely, by a non-adiabatic effect of the electron occupation up-conversion caused by the electron-phonon multiple scattering mechanism.
Power-law photoluminescence decay in quantum dots
NASA Astrophysics Data System (ADS)
Krl, Karel; Menk, Miroslav
2014-05-01
Some quantum dot samples show a long-time (power-law) behavior of their luminescence intensity decay. This effect has been recently explained as being due to a cooperation of many tunneling channels transferring electrons from small quantum dots with triplet exciton to quantum dots at which the electrons can recombine with the holes in the valence band states. In this work we show that the long-time character of the sample luminescence decay can also be caused by an intrinsic property of a single dot, namely, by a non-adiabatic effect of the electron occupation up-conversion caused by the electron-phonon multiple scattering mechanism.
Controlling quantum dot energies using submonolayer bandstructure engineering
Yu, L.; Law, S.; Wasserman, D.; Jung, D.; Lee, M. L.; Shen, J.; Cha, J. J.
2014-08-25
We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77 K from 1.38 eV to 1.88 eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.
Thermodynamic properties of a quantum Hall anti-dot interferometer
NASA Astrophysics Data System (ADS)
Levy Schreier, Sarah; Stern, Ady; Rosenow, Bernd; Halperin, Bertrand I.
2016-02-01
We study quantum Hall interferometers in which the interference loop encircles a quantum anti-dot. We base our study on thermodynamic considerations, which we believe reflect the essential aspects of interference transport phenomena. We find that similar to the more conventional Fabry-Perot quantum Hall interferometers, in which the interference loop forms a quantum dot, the anti-dot interferometer is affected by the electro-static Coulomb interaction between the edge modes defining the loop. We show that in the Aharonov-Bohm regime, in which effects of fractional statistics should be visible, is easier to access in interferometers based on anti-dots than in those based on dots. We discuss the relevance of our results to recent measurements on anti-dots interferometers.
Quantum dot intermixing using excimer laser irradiation
Djie, H. S.; Ooi, B. S; Gunawan, O.
2006-08-21
The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm{sup 2} and 150 pulses to the SiO{sub 2} capped shallow QD structure, while the nonirradiated SiO{sub 2} and Si{sub x}N{sub y} capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.
Quantum-dot cluster-state computing with encoded qubits
NASA Astrophysics Data System (ADS)
Weinstein, Yaakov S.; Hellberg, C. Stephen; Levy, Jeremy
2005-08-01
A class of architectures is advanced for cluster-state quantum computation using quantum dots. These architectures include using single and multiple dots as logical qubits. Special attention is given to supercoherent qubits introduced by Bacon [Phys. Rev. Lett. 87, 247902 (2001)] for which we discuss the effects of various errors and present a means of error protection.
Fast synthesize ZnO quantum dots via ultrasonic method.
Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-05-01
Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. PMID:26611814
Synthesis and photoluminescence of ZnS quantum dots.
Wang, Yu Hua; Chen, Zhong; Zhou, Xiao Qun
2008-03-01
Single-phase zinc sulphide (ZnS) quantum dots were synthesized by a chemical method. The influence of the pH value of the Zn(CH3COO)2 solution on the size and photoluminescence properties of the ZnS quantum dots was evaluated. X-ray power diffraction, transmission electron microscopy, and ultraviolet-visible spectroscopy were used to characterize the structure, size, surface states, and photoluminescence properties of ZnS quantum dots. The results showed that the crystal structure of ZnS quantum dots was a cubic zinc blende structure, and their average diameter was about 3.0 nm. ZnS quantum dots with good distribution and high purity were obtained. A strong broad band centered at about 320 nm was observed in the excitation spectrum of ZnS quantum dots. Their emission spectrum peaking at about 408 nm, was due mostly to the trap-state emission. The relative integrated emission intensity of ZnS quantum dots decreased as the pH value of the Zn(CH3COO)2 solution increased, which could be ascribed to the increase in average diameter of the ZnS quantum dots as the pH value of Zn(CH3COO)2 solution increased. PMID:18468145
Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots.
Park, Young-Shin; Guo, Shaojun; Makarov, Nikolay S; Klimov, Victor I
2015-10-27
Lead-halide-based perovskites have been the subject of numerous recent studies largely motivated by their exceptional performance in solar cells. Electronic and optical properties of these materials have been commonly controlled by varying the composition (e.g., the halide component) and/or crystal structure. Use of nanostructured forms of perovskites can provide additional means for tailoring their functionalities via effects of quantum confinement and wave function engineering. Furthermore, it may enable applications that explicitly rely on the quantum nature of electronic excitations. Here, we demonstrate that CsPbX3 quantum dots (X = I, Br) can serve as room-temperature sources of quantum light, as indicated by strong photon antibunching detected in single-dot photoluminescence measurements. We explain this observation by the presence of fast nonradiative Auger recombination, which renders multiexciton states virtually nonemissive and limits the fraction of photon coincidence events to ∼6% on average. We analyze limitations of these quantum dots associated with irreversible photodegradation and fluctuations ("blinking") of the photoluminescence intensity. On the basis of emission intensity-lifetime correlations, we assign the "blinking" behavior to random charging/discharging of the quantum dot driven by photoassisted ionization. This study suggests that perovskite quantum dots hold significant promise for applications such as quantum emitters; however, to realize this goal, one must resolve the problems of photochemical stability and photocharging. These problems are largely similar to those of more traditional quantum dots and, hopefully, can be successfully resolved using advanced methodologies developed over the years in the field of colloidal nanostructures. PMID:26312994
Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins
NASA Astrophysics Data System (ADS)
Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou
2016-02-01
We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.
Nonlinear optical response and exciton dephasing in quantum dots
NASA Astrophysics Data System (ADS)
Muljarov, E. A.; Zimmermann, R.
2006-08-01
The full time-dependent four-wave mixing polarization in quantum dots is microscopically calculated, taking into account acoustic phonon-assisted transitions between different exciton states of the dot. It is shown that quite different dephasing times of higher exciton states in pancake anisotropic InGaAs quantum dots are responsible for the experimentally observed [1] double-exponential decay in the photon echo signal.
Minimal Self-Contained Quantum Refrigeration Machine Based on Four Quantum Dots
NASA Astrophysics Data System (ADS)
Venturelli, Davide; Fazio, Rosario; Giovannetti, Vittorio
2013-06-01
We present a theoretical study of an electronic quantum refrigerator based on four quantum dots arranged in a square configuration, in contact with as many thermal reservoirs. We show that the system implements the minimal mechanism for acting as a self-contained quantum refrigerator, by demonstrating heat extraction from the coldest reservoir and the cooling of the nearby quantum dot.
Double quantum dot in a quantum dash: Optical properties
Kaczmarkiewicz, Piotr Machnikowski, Pawe?; Kuhn, Tilmann
2013-11-14
We study the optical properties of highly elongated, highly flattened quantum dot structures, also referred to as quantum dashes, characterized by the presence of two trapping centers located along the structure. Such a system can exhibit some of the properties characteristic for double quantum dots. We show that sub- and super-radiant states can form for certain quantum dash geometries, which is manifested by a pronounced transfer of intensity between spectral lines, accompanied by the appearance of strong electron-hole correlations. We also compare exciton absorption spectra and polarization properties of a system with a single and double trapping center and show how the geometry of multiple trapping centers influences the optical properties of the system. We show that for a broad range of trapping geometries the relative absorption intensity of the ground state is larger than that of the lowest excited states, contrary to the quantum dash systems characterized by a single trapping center. Thus, optical properties of these structures are determined by fine details of their morphology.
Quantum Dots in Diagnostics and Detection: Principles and Paradigms
Pisanic, T. R.; Zhang, Y.; Wang, T. H.
2014-01-01
Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection. PMID:24770716
Non-blinking quantum dot with a plasmonic nanoshell resonator
NASA Astrophysics Data System (ADS)
Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit
2015-02-01
Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.
Interaction of porphyrins with CdTe quantum dots
NASA Astrophysics Data System (ADS)
Zhang, Xing; Liu, Zhongxin; Ma, Lun; Hossu, Marius; Chen, Wei
2011-05-01
Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.
Hyper-parallel photonic quantum computation with coupled quantum dots.
Ren, Bao-Cang; Deng, Fu-Guo
2014-01-01
It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF. PMID:24721781
Hyper-parallel photonic quantum computation with coupled quantum dots
Ren, Bao-Cang; Deng, Fu-Guo
2014-01-01
It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF. PMID:24721781
Semiconductor quantum dots for future optical applications.
Mukai, Kohki
2014-03-01
Research and development of the semiconductor quantum dots (QDs) for optical applications are reviewed. The QDs are small crystals composed of ILL-V, II-VI, IV and IV-VI semiconductors, the size of which is about 10 nm. They are categorized into two groups. One is called the self-assembled QDs which are grown epitaxially on the semiconductor substrate, and the other is the colloidal QDs synthesized in the solvent using chemical technique. Since the emission wavelength of both QDs covers wide range, i.e., from visible to infrared, the QDs are attractive to various application fields. In this article, we focus on the progress in the three application fields, i.e., the replacement of existing products, the quantum information devices, and the solar cells. PMID:24745208
Biosensing with Luminescent Semiconductor Quantum Dots
Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi
2006-01-01
Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapting QDs for several predominantly in vitro biosensing applications including use in immunoassays, as generalized probes, in nucleic acid detection and fluorescence resonance energy transfer (FRET) - based sensing. We also describe several important considerations when working with QDs mainly centered on the choice of material(s) and appropriate strategies for attaching biomolecules to the QDs.
Growth, spectroscopy, and quantum optics of self-assembled quantum dot molecules
NASA Astrophysics Data System (ADS)
Gerardot, Brian D.
Since their inception, semiconductor quantum dots (QDs) have attracted much attention due to properties which are analogous with individual atoms. In addition to classical applications, novel applications have been identified which exploit the strong confinement of both electrons and holes in self-assembled QDs. This artificial atom analogy can be extended to artificial molecules by coupling two neighboring quantum dots. This single quantum system has been proposed for entangled photon pair emission and two bit or quantum bit gate operations. This thesis focuses on self-assembled InAs/GaAs QD molecules, which have good optical quality and tunable electronic and optical properties. One significant drawback of the spontaneous nature of self-assembly is random site nucleation. The lateral ordering of epitaxial semiconductor quantum dots is investigated using crystal growth techniques on pre-patterned substrates. Using localized surface chemical potential engineering, the ability to create ordered quantum dot lattices is demonstrated. However, this positioning technique is not precise enough to investigate coupling between neighboring QDs. Therefore, coupling between two vertically stacked QDs is explored. The strain field above the first QD induces a nucleation site for a second QD. The different nucleation conditions naturally yield different optical and electronic properties in the QD pair. By applying an electric field, carrier transfer between two QDs of different confining potentials is measured using micro-photoluminescence. The crystal growth kinetics in each QD were then carefully optimized to independently tune the two QDs ground state transitions to nearly identical energies. Optical spectroscopy of a QD molecule shows that excitons are strongly localized on each QD, therefore minimizing electronic tunneling. However, two types of electrostatic coupling are observed: Coulombic attraction and dipole-dipole interaction. Two-photon emission correlations from the rich spectra exhibit strong antibunching, unambiguously demonstrating the formation of an artificial molecule. Temperature dependent photoluminescence measurements show that directional energy transfer takes place from the high energy QD to the low energy QD. A simple rate-equation model is used to simulate the photon correlation experiment with qualitative agreement.
Auger recombination in In(Ga)Sb/InAs quantum dots
Zabel, T. Reuterskiöld Hedlund, C.; Gustafsson, O.; Berggren, J.; Ernerheim-Jokumsen, C.; Soldemo, M.; Weissenrieder, J.; Götelid, M.; Hammar, M.; Karim, A.; Wang, Q.
2015-01-05
We report on the epitaxial formation of type II In{sub 0.5}Ga{sub 0.5}Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170–200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10{sup −28} cm{sup 6}/s for In{sub 0.5}Ga{sub 0.5}Sb/InAs quantum dots and 1.47 × 10{sup −27} cm{sup 6}/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
Residual Stress and Its Effects on Electronic Properties in Quantum Dots
NASA Astrophysics Data System (ADS)
Vlahovic, Branislov; Suslov, V.; Filikhin, I.; Wang, Kai; Dept. Of Physics Team
2003-03-01
Quantum dots have been proposed as one of the promising nano devices that have many applications, such as high efficiency solar cells, information storage etc.. They are usually fabricated by growing nano-meter sized materials on various substrates. The differences of materials properties between the quantum dots and the substrate materials create residual stresses inside the quantum dots. The stress also causes defects and micro-structural changes in the nano devices. The electrical, optical, photovoltaic properties and device lifetime can be detrimentally affected. Numerical modeling methods have been utilized to study the residual stresses and their effects on the electronic properties in quantum dots. A finite element method has been used in the residual stress simulations. Both thermal expansion differences and lattice mismatch between quantum dots and substrate materials are included in the residual stress modeling. The time-independent Schr dinger equation, which includes the strain-induced potential and the potential caused by the semiconductor heterostructures, has been solved with a finite difference method. The wave functions and the energies of the confined states have been obtained. These allow us to compute the electronic and transport properties of the nano-devices.
Quantum Dot Enabled Molecular Sensing and Diagnostics
Zhang, Yi; Wang, Tza-Huei
2012-01-01
Since its emergence, semiconductor nanoparticles known as quantum dots (QDs) have drawn considerable attention and have quickly extended their applicability to numerous fields within the life sciences. This is largely due to their unique optical properties such as high brightness and narrow emission band as well as other advantages over traditional organic fluorophores. New molecular sensing strategies based on QDs have been developed in pursuit of high sensitivity, high throughput, and multiplexing capabilities. For traditional biological applications, QDs have already begun to replace traditional organic fluorophores to serve as simple fluorescent reporters in immunoassays, microarrays, fluorescent imaging applications, and other assay platforms. In addition, smarter, more advanced QD probes such as quantum dot fluorescence resonance energy transfer (QD-FRET) sensors, quenching sensors, and barcoding systems are paving the way for highly-sensitive genetic and epigenetic detection of diseases, multiplexed identification of infectious pathogens, and tracking of intracellular drug and gene delivery. When combined with microfluidics and confocal fluorescence spectroscopy, the detection limit is further enhanced to single molecule level. Recently, investigations have revealed that QDs participate in series of new phenomena and exhibit interesting non-photoluminescent properties. Some of these new findings are now being incorporated into novel assays for gene copy number variation (CNV) studies and DNA methylation analysis with improved quantification resolution. Herein, we provide a comprehensive review on the latest developments of QD based molecular diagnostic platforms in which QD plays a versatile and essential role. PMID:22916072
Excitation transfer in stacked quantum dot chains
NASA Astrophysics Data System (ADS)
Kanjanachuchai, Songphol; Xu, Ming; Jaffré, Alexandre; Jittrong, Apichart; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed
2015-05-01
Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP) templates yield a rich emission spectrum with an unusual carrier transfer characteristic compared to conventional quantum dot (QD) stacks. The photoluminescent spectra of the controlled, single QDC layer comprise multiple peaks from the orthogonal QDCs, the free-standing QDs, the CHP, the wetting layers and the GaAs substrate. When the QDC layers are stacked, employing a 10 nm GaAs spacer between adjacent QDC layers, the PL spectra are dominated by the top-most stack, indicating that the QDC layers are nominally uncoupled. Under high excitation power densities when the high-energy peaks of the top stack are saturated, however, low-energy PL peaks from the bottom stacks emerge as a result of carrier transfers across the GaAs spacers. These unique PL signatures contrast with the state-filling effects in conventional, coupled QD stacks and serve as a means to quickly assess the presence of electronic coupling in stacks of dissimilar-sized nanostructures.
Fourier transform spectra of quantum dots
NASA Astrophysics Data System (ADS)
Damian, V.; Ardelean, I.; Arm??elu, Anca; Apostol, D.
2009-09-01
Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.
Fourier transform spectra of quantum dots
NASA Astrophysics Data System (ADS)
Damian, V.; Ardelean, I.; Arm??elu, Anca; Apostol, D.
2010-05-01
Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.
Colloidal quantum dot light-emitting devices
Wood, Vanessa; Bulovi?, Vladimir
2010-01-01
Colloidal quantum dot light-emitting devices (QD-LEDs) have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI). We review the key advantages of using quantum dots (QDs) in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs - optical excitation, Frster energy transfer, and direct charge injection - that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt). We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs. PMID:22110863
Study of metallothionein-quantum dots interactions.
Tmejova, Katerina; Hynek, David; Kopel, Pavel; Krizkova, Sona; Blazkova, Iva; Trnkova, Libuse; Adam, Vojtech; Kizek, Rene
2014-05-01
Nanoparticles have gained increasing interest in medical and in vivo applications. Metallothionein (MT) is well known as a maintainer of metal ions balance in intracellular space. This is due to high affinity of this protein to any reactive species including metals and reactive oxygen species. The purpose of this study was to determine the metallothionein-quantum dots interactions that were investigated by spectral and electrochemical techniques. CuS, CdS, PbS, and CdTe quantum dots (QDs) were analysed. The highest intensity was shown for CdTe, than for CdS measured by fluorescence. These results were supported by statistical analysis and considered as significant. Further, these interactions were analysed using gel electrophoresis, where MT aggregates forming after interactions with QDs were detected. Using differential pulse voltammetry Brdicka reaction, QDs and MT were studied. This method allowed us to confirm spectral results and, moreover, to observe the changes in MT structure causing new voltammetric peaks called X and Y, which enhanced with the prolonged time of interaction up to 6 h. PMID:24703633
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.
Reentrant Magnetic Polaron Formation in Quantum Dots
NASA Astrophysics Data System (ADS)
Pientka, James; Oszwaldowski, Rafal; Han, Jong; Zutic, Igor; Petukhov, Andre
2012-02-01
Recently, there have been several theoretical studies that show multiple ways of manipulating magnetic ordering in Quantum Dots (QD) [1,2]. Experiments [3,4] display the formation of Magnetic Polarons in both colloidal and self-assembled QDs. We focus on a type-II QD band profile, where the electrons reside in the barrier, while the holes are localized in the QD interior, which contains the magnetic impurities. In our model, photo-excitation of carriers induces a quasi equilibrium. We consider various QD states to describe the carrier-mediated magnetic ordering in QDs. Allowing for different QD states changes the magnetic properties due to different carrier spin density [5], which affects the alignment of the magnetic impurities. [1] R. M. Abolfath, A. G. Petukhov, and I. Zutic, Phys. Rev. Lett. 101, 207202 (2008); [2] I. Zutic and A. G. Petukhov, Nature Mater.4, 623 (2009). [3] R. Beaulac et al., Science 325, 973 (2009). [4] I. R. Sellers, R. Oszwaldowski, et al., Phys. Rev. B 82, 195320 (2010). [5] J. M. Pientka, R. Oszwaldowski, A. G. Petukhov, J. E. Han, and I. Zutic, Reentrant Magnetic Polaron Formation in Quantum Dots, preprint.
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less
Mobile potential dots in GaAs quantum wells
NASA Astrophysics Data System (ADS)
Stotz, J. A. H.; Sogawa, T.; Alsina, F.; Hey, H.; Santos, P. V.
2005-06-01
Confined and mobile potential dots (dynamic dots, DDs) are created using two orthogonally propagating surface-acoustic-wave beams. Using spatially and time-resolved photoluminescence measurements, the compressive and tensile strain fields at the DD centers have been imaged by analyzing the polarization-dependent luminescence from charge carriers transported by the DDs.
NASA Astrophysics Data System (ADS)
Hu, Xuedong; Das Sarma, S.
2000-06-01
We theoretically study a double-quantum-dot hydrogen molecule in the GaAs conduction band as the basic elementary gate for a quantum computer, with the electron spins in the dots serving as qubits. Such a two-dot system provides the necessary two-qubit entanglement required for quantum computation. We determine the excitation spectrum of two horizontally coupled quantum dots with two confined electrons, and study its dependence on an external magnetic field. In particular, we focus on the splitting of the lowest singlet and triplet states, the double occupation probability of the lowest states, and the relative energy scales of these states. We point out that at zero magnetic field it is difficult to have both a vanishing double occupation probability for a small error rate and a sizable exchange coupling for fast gating. On the other hand, finite magnetic fields may provide finite exchange coupling for quantum computer operations with small errors. We critically discuss the applicability of the envelope-function approach in the current scheme, and also the merits of various quantum-chemical approaches in dealing with few-electron problems in quantum dots, such as the Hartree-Fock self-consistent-field method, the molecular-orbital method, the Heisenberg model, and the Hubbard model. We also discuss a number of relevant issues in quantum dot quantum computing in the context of our calculations, such as the required design tolerance, spin decoherence, adiabatic transitions, magnetic-field control, and error correction.
Electron Spin Qubits in Si/SiGe Quantum Dots
NASA Astrophysics Data System (ADS)
Eriksson, Mark
2010-10-01
It is intriguing that silicon, the central material of modern classical electronics, also has properties well suited to quantum electronics. Recent advances in Si/SiGe quantum devices have enabled the creation of high-quality silicon quantum dots, also known as artificial atoms. Motivated in part by the potential for very long spin coherence times in this material, we are pursuing the development of individual electron spin qubits in silicon quantum dots. I will discuss recent demonstrations of single-shot spin measurement in a Si/SiGe quantum dot spin qubit, and the demonstration of spin-relaxation times longer than one second in such a system. These and similar measurements depend on a knowledge of tunnel rates between quantum dots and nearby reservoirs or between pairs of quantum dots. Measurements of such rates provide an opportunity to revisit classic experiments in quantum mechanics. At the same time, the unique features of the silicon conduction band lead to novel and unexpected effects, demonstrating that Si/SiGe quantum dots provide a highly controlled experimental system in which to study ideas at the heart of quantum physics.
NASA Astrophysics Data System (ADS)
Chen, Qinghu; Ren, Yuhang; Jiao, Zhengkuan; Wang, Kelin
1999-03-01
The Feynman-Haken variational path integral theory is generalized to calculate the binding energy Eb of an electron coupled simultaneously to an impurity with varing position and to a longitudinal-optical (LO) phonon field in parabolic quantum dots. Our calculations are applied to some semiconductor materials and the results for the binding energy are obtained for different confinement length R of the dot and arbitrary position of the impurity. It is shown that the polaronic correction to Eb decreases with the displacement of the impurity and increases with the confinement length of the dot. More interestingly, it is not so strong as the polaronic correction to the ground-state energy of the system, and the behaviours of their variation with R are totally different.
Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot.
Bouwes Bavinck, Maaike; Jns, Klaus D; Zieli?ski, Michal; Patriarche, Gilles; Harmand, Jean-Christophe; Akopian, Nika; Zwiller, Val
2016-02-10
We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width. We notice that the emission spectra consist often of two peaks close in energy, which we explain with a comprehensive theory showing that the symmetry of the system plays a crucial role for the hole levels forming hybridized orbitals. Our results state that crystal phase quantum dots have promising quantum optical properties for single photon application and quantum optics. PMID:26806321
Charge-extraction strategies for colloidal quantum dot photovoltaics
NASA Astrophysics Data System (ADS)
Lan, Xinzheng; Masala, Silvia; Sargent, Edward H.
2014-03-01
The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p- and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction.
Optimum quantum dot size for highly efficient fluorescence bioimaging
NASA Astrophysics Data System (ADS)
Martnez Maestro, Laura; Jacinto, Carlos; Rocha, Uslen; Carmen Iglesias-de la Cruz, M.; Sanz-Rodriguez, Francisco; Juarranz, Angeles; Garca Sol, Jos; Jaque, Daniel
2012-01-01
Semiconductor quantum dots of few nanometers have demonstrated a great potential for bioimaging. The size determines the emitted color, but it is also expected to play an important role in the image brightness. In this work, the size dependence of the fluorescence quantum yield of the highly thermal sensitive CdTe quantum dots has been systematically investigated by thermal lens spectroscopy. It has been found that an optimum quantum yield is reached for 3.8-nm quantum dots. The presence of this optimum size has been corroborated in both one-photon excited fluorescence experiments and two-photon fluorescence microscopy of dot-incubated cancer cells. Combination of quantum yield and fluorescence decay time measurements supports that the existence of this optimum size emerges from the interplay between the frequency-dependent radiative emission rate and the size-dependent coupling strength between bulk excitons and surface trapping states.
Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain
NASA Astrophysics Data System (ADS)
Ferraro, E.; De Michielis, M.; Fanciulli, M.; Prati, E.
2015-02-01
A scheme based on coherent tunneling by adiabatic passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.
Manipulating Single Spins in Quantum Dots Coupled to Ferromagnetic Leads
NASA Astrophysics Data System (ADS)
König, Jürgen; Braun, Matthias; Martinek, Jan
We discuss the possibility to generate, manipulate, and probe single spins in single-level quantum dots coupled to ferromagnetic leads. The spin-polarized currents flowing between dot and leads lead to a non-equilibrium spin accumulation, i.e., a finite polarization of the dot spin. Both the magnitude and the direction of the dot's spin polarization depends on the magnetic properties of leads and their coupling to the dot. They can be, furthermore, manipulated by either an externally applied magnetic field or an intrinsically present exchange field that arises due to the tunnel coupling of the strongly-interacting quantum-dot states to spin-polarized leads. The exchange field can be tuned by both the gate and bias voltage, which, therefore, provide convenient handles to manipulate the quantum-dot spin. Since the transmission through the quantum-dot spin valve sensitively depends on the state of the quantum-dot spin, all the dynamics of the latter is reflected in the transport properties of the device.
Analysis of electronic structures of quantum dots using meshless Fourier transform kp method
NASA Astrophysics Data System (ADS)
Zhao, Qiuji; Mei, Ting
2011-03-01
We develop a complete Fourier transform k.p method and present its application for a theoretical investigation on electronic structures of quantum dots with consideration of the built-in strain effects. The Fourier transform technique is applied to the periodic position-dependent Hamiltonian, and a simple and neat expression of the Hamiltonian matrix in the Fourier domain is formulated due to the orthogonality of exponential functions. Spurious solutions can be avoided due to the truncation of high Fourier frequencies. A kinetic Hamiltonian matrix in momentum domain is formulated by entering the analytical Fourier transform of the quantum-dot shape function into the neat Hamiltonian matrix easily, which allows meshless numerical implementation. The formulation of strain Hamiltonian matrix is done by convolution of Fourier series of strain components and Fourier series of the quantum-dot shape functions. Therefore, an original Fourier transform-based k.p approach is developed by combining the kinetic Hamiltonian matrix and the strain Hamiltonian. This approach is adopted to study the dimension effect and strain effect on the ground states of electrons and holes of pyramidal quantum dots that are truncated to different heights. The ground-state energy variation shows that the electron state is the most sensitive to these effects and the strain effect on E1, LH1, and HH1 is more prominent for sharperquantum dots. This investigation shows that band mixing between the conduction band and valence band, and band mixing between heavy-hole and light-hole bands are reduced due to the strain effect, whereas this effect is more prominent for nontruncated pyramidal quantum dots due to the stress concentration. Among the three ground states, light-hole states are more weakly confined in the nonpyramidal quantum dot and shift to the tip of the pyramid due to the strain.
Ferritin-Templated Quantum-Dots for Quantum Logic Gates
NASA Technical Reports Server (NTRS)
Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.
2005-01-01
Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.
Hole States and Magnetic Anisotropy of a Quantum Dot
NASA Astrophysics Data System (ADS)
Rederth, Dan; Chapagain, Hari; Oszwaldowski, Rafal; Petukhov, A. G.
2015-03-01
In the era of spin-based advanced semiconductor materials, spin can be used for the control of quantum devices based on quantum dots (QDs). To facilitate the control of the electronic and magnetic properties, magnetic ions can be incorporated in the QDs. We study the properties of such a magnetic II-VI QD charged with one hole. To account for the complex structure of valence band, we propose a method based on the Luttinger-Kohn Hamiltonian. With a robust numerical algorithm suitable for any QD geometry, we study the interplay of quantum confinement and magnetic anisotropy of a flat QD. We go beyond the virtual crystal approximation; our model also allows for position-dependent direction of magnetization. We discuss the differences between our and previous results, as well as the effects of temperature (mean-field approximation), and of the spin-orbit split-off band. We also discuss possible fluctuations of magnetization in QDs. Supported by DOE DE-SC00004890. DoE
RKKY interaction in a chirally coupled double quantum dot system
Heine, A. W.; Tutuc, D.; Haug, R. J.; Zwicknagl, G.; Schuh, D.; Wegscheider, W.
2013-12-04
The competition between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction is investigated in a double quantum dots system, coupled via a central open conducting region. A perpendicular magnetic field induces the formation of Landau Levels which in turn give rise to the so-called Kondo chessboard pattern in the transport through the quantum dots. The two quantum dots become therefore chirally coupled via the edge channels formed in the open conducting area. In regions where both quantum dots exhibit Kondo transport the presence of the RKKY exchange interaction is probed by an analysis of the temperature dependence. The thus obtained Kondo temperature of one dot shows an abrupt increase at the onset of Kondo transport in the other, independent of the magnetic field polarity, i.e. edge state chirality in the central region.
Quantum confinement in GaP nanoclusters
Laurich, B.K.; Smith, D.C.; Healy, M.D.
1994-06-01
We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.
An analytical model for quantum dot semiconductor optical amplifiers
NASA Astrophysics Data System (ADS)
Qasaimeh, Omar
2003-07-01
An analytical model for the optical gain of quantum dot-semiconductor optical amplifier (QD-SOA) is presented. The model is derived by analytically solving the rate equations of the laser amplifier taking into account inhomogeneous line broadening, dot-to-dot electron tunneling and gain saturation due to spontaneous emission. Because of the unique electronic structure of quantum dots (QDs), we observed that using QD in the active region of a semiconductor optical amplifier increases the unsaturated optical gain and the output saturation intensity of the amplifier.
Resonant excitation of intraband absorption in InAs/GaAs self-assembled quantum dots
NASA Astrophysics Data System (ADS)
Sauvage, S.; Boucaud, P.; Grard, J.-M.; Thierry-Mieg, V.
1998-10-01
We have investigated the infrared absorption between confined levels in the conduction and valence bands of undoped InAs/GaAs self-assembled quantum dots. The intraband absorption, which is measured by photoinduced spectroscopy, is analyzed under resonant and nonresonant optical excitation of the quantum dots. The assignment of electron and hole intraband transitions is achieved on the basis of experimental results obtained with n-and p-doped quantum dots. A careful analysis of the absorption spectra shows that several hole transitions and one electron transition with a large broadening are evidenced in the mid-infrared spectral range. We show that the amplitude of the intraband absorption depends on the pump excitation wavelength and exhibits a maximum when the dots are populated via the wetting layer. The spectral shape of the hole intraband absorption is very weakly dependent on the excitation wavelength. The amplitude of the photoinduced hole intraband absorption exhibits a sublinear behavior with the pump intensity. This feature is explained by the state filling of the quantum dots.
Puthen-Veettil, B. Patterson, R.; König, D.; Conibeer, G.; Green, M. A.
2014-10-28
Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.
Electroluminescence of carbon quantum' dots - From materials to devices
NASA Astrophysics Data System (ADS)
Veca, L. Monica; Diac, Andreea; Mihalache, Iuliana; Wang, Ping; LeCroy, Gregory E.; Pavelescu, Emil Mihai; Gavrila, Raluca; Vasile, Eugeniu; Terec, Anamaria; Sun, Ya-Ping
2014-10-01
Carbon quantum' dots or carbon dots have emerged as a new class of luminescent nanomaterials. While photoluminescence properties of carbon dots had targeted optical imaging and related usage, their unique excited state redox processes responsible for the luminescence emissions may find potentially significant optoelectronic applications. In this regard, we investigated the electroluminescence properties of the carbon dots integrated into multilayer light emitting diode devices. The devices emitted white light with a slight blue color, visible to naked eyes, thus validating the expectation that carbon dots may potentially serve as a new platform for electroluminescent nanomaterials.
Kondo and mixed-valence regimes in multilevel quantum dots
Chudnovskiy, A. L.; Ulloa, S. E.
2001-04-15
We investigate the dependence of the ground state of a multilevel quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the effective energy levels in the dot signals the transition from the Kondo regime to a mixed-valence (MV) regime. The MV regime in a two-level dot is characterized by an intrinsic mixing of the levels in the dot, resulting in nonperturbative subtunneling and supertunneling phenomena that strongly influence the Kondo effect.
Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography
Qian, X.; Li, J.; Wasserman, D.; Goodhue, W. D.
2008-12-08
We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.
NASA Astrophysics Data System (ADS)
Marcinkevi?ius, S.; Siegert, J.; Leon, R.; ?echavi?ius, B.; Magness, B.; Taylor, W.; Lobo, C.
2002-12-01
The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot structures varying in dot surface density (4108 31010 cm-2) and substrate orientation [(100) and (311)B]. Similar trends were observed for all quantum dot samples. A slight increase in photoluminescence emission intensity after low to intermediate proton doses is observed in InGaAs/GaAs (100) quantum dot structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Effect of the charges of impurity on the refractive index changes in parabolic quantum dot
NASA Astrophysics Data System (ADS)
Huang, Jinsheng
2013-01-01
The linear and nonlinear refractive index changes (RICs) in a disc-like parabolic quantum dot (QD) with impurity between the ground (L=0) and the first excited state (L=1) have been examined based on the computed energies and wave functions. The parabolic QD without impurity was taken into account for comparison. We found that the linear and total RIC of impurity QD decrease as the charge of the impurity is increased and increase with characteristic dot radius decreasing. The maximum of linear RIC of parabolic QD without impurity remains constant for different confinement strengths.
Quantum Monte Carlo finite temperature electronic structure of quantum dots
NASA Astrophysics Data System (ADS)
Leino, Markku; Rantala, Tapio T.
2002-08-01
Quantum Monte Carlo methods allow a straightforward procedure for evaluation of electronic structures with a proper treatment of electronic correlations. This can be done even at finite temperatures [1]. We test the Path Integral Monte Carlo (PIMC) simulation method [2] for one and two electrons in one and three dimensional harmonic oscillator potentials and apply it in evaluation of finite temperature effects of single and coupled quantum dots. Our simulations show the correct finite temperature excited state populations including degeneracy in cases of one and three dimensional harmonic oscillators. The simulated one and two electron distributions of a single and coupled quantum dots are compared to those from experiments and other theoretical (0 K) methods [3]. Distributions are shown to agree and the finite temperature effects are discussed. Computational capacity is found to become the limiting factor in simulations with increasing accuracy. Other essential aspects of PIMC and its capability in this type of calculations are also discussed. [1] R.P. Feynman: Statistical Mechanics, Addison Wesley, 1972. [2] D.M. Ceperley, Rev.Mod.Phys. 67, 279 (1995). [3] M. Pi, A. Emperador and M. Barranco, Phys.Rev.B 63, 115316 (2001).
Electric and magnetic optical polaron in quantum dotPart 1: strong coupling
NASA Astrophysics Data System (ADS)
Fotue, A. J.; Issofa, N.; Tiotsop, M.; Kenfack, S. C.; Tabue Djemmo, M. P.; Fotsin, H.; Fai, L. C.
2015-07-01
We investigated the influence of electric field and magnetic field on the ground state energy of polaron in spherical semiconductor quantum dot (QD) using a modified Lee Low Pines (LLP) method. The numerical results show the increase of the ground state energy with the increase of the electric field and the decreasing with the magnetic field. The modulation of the electric field, magnetic field and the confinement lengths lead to the control of the decoherence of the system.
Full counting statistics of quantum dot resonance fluorescence.
Matthiesen, Clemens; Stanley, Megan J; Hugues, Maxime; Clarke, Edmund; Atatre, Mete
2014-01-01
The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097
Full counting statistics of quantum dot resonance fluorescence
Matthiesen, Clemens; Stanley, Megan J.; Hugues, Maxime; Clarke, Edmund; Atatre, Mete
2014-01-01
The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097
NASA Astrophysics Data System (ADS)
Yassitepe, Emre; Voznyy, Oleksandr; Sargent, Edward; Nogueira, Ana Flavia F.
2015-10-01
Colloidal quantum dot heterojunction thin film solar cells (CQD-TFSC) utilize facile thin film deposition methods and promise high photon conversion efficiencies (PCE) to cost ratio which is highly desired for commercialization. So far, surface passivated PbS CQD-TFSCs show the highest PCE results, reaching 9.2% with good stability. Among other potential candidates, CuInSe2 CQDs stand out as a non-toxic material with high potential for performance, judging on bulk Cu(Ga,In)(S,Se)2 TFSCs reaching 20% PCE, with high stability. CuInSe2 CQDs has advantage over bulk films, mainly the much less expensive manufacturing cost of uniform deposition on large areas. Ga is known to cause phase separation in the bulk CIGS system. In a CQD form, CuInSe2 band gap can be tuned between 1 to 1.6 eV by quantum confinement without need for Ga and this eliminates the phase separation issue. Within our best knowledge, there are no reports on surface trap passivated CuInSe2 CQD-TFSCs. However Cu(In,Ga)(S,Se)2 colloidal particles were cast in thin film form and fused to form bulk-like crystals by various annealing conditions for solar cell devices. In this work, we investigated well-passivated CuInSe2 CQDs on n-type TiO2 and ZnO layers to form depleted heterojunction structure. We prepared luminescent CuInSe2 CQDs by synthetic wet chemistry methods and passivated the surface with 3-mercaptopropionic acid or tetrabutylammonium iodide using solid-state ligand exchange. X-ray photoelectron spectroscopy was used to confirm the ligand boding and surface coverage of the quantum dots. We will present the effect of synthesis and thin film preparation conditions on the solar cell device performance
Kushavah, Dushyant; Mohapatra, P. K.; Vasa, P.; Singh, B. P.; Rustagi, K. C.; Bahadur, D.
2015-05-15
We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ∼5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ∼597 to ∼746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ∼51 ns as compared to ∼6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.
NASA Astrophysics Data System (ADS)
Kushavah, Dushyant; Mohapatra, P. K.; Rustagi, K. C.; Bahadur, D.; Vasa, P.; Singh, B. P.
2015-05-01
We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ˜5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ˜597 to ˜746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ˜51 ns as compared to ˜6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.
Phonon-Induced Exciton Dephasing in Quantum Dot Molecules
NASA Astrophysics Data System (ADS)
Muljarov, E. A.; Takagahara, T.; Zimmermann, R.
2005-10-01
A new microscopic approach to the optical transitions in quantum dots and quantum dot molecules, which accounts for both diagonal and nondiagonal exciton-phonon interaction, is developed. The cumulant expansion of the linear polarization is generalized to a multilevel system and is applied to calculation of the full time dependence of the polarization and the absorption spectrum. In particular, the broadening of zero-phonon lines is evaluated directly and discussed in terms of real and virtual phonon-assisted transitions. The influence of Coulomb interaction, tunneling, and structural asymmetry on the exciton dephasing in quantum dot molecules is analyzed.
Semiconductor Quantum Dots in Chemical Sensors and Biosensors
Frasco, Manuela F.; Chaniotakis, Nikos
2009-01-01
Quantum dots are nanometre-scale semiconductor crystals with unique optical properties that are advantageous for the development of novel chemical sensors and biosensors. The surface chemistry of luminescent quantum dots has encouraged the development of multiple probes based on linked recognition molecules such as peptides, nucleic acids or small-molecule ligands. This review overviews the design of sensitive and selective nanoprobes, ranging from the type of target molecules to the optical transduction scheme. Representative examples of quantum dot-based optical sensors from this fast-moving field have been selected and are discussed towards the most promising directions for future research. PMID:22423206
Coherent single-electron transfer in coupled quantum dots
NASA Astrophysics Data System (ADS)
Fountoulakis, Antonios; Terzis, Andreas F.; Paspalakis, Emmanuel
2009-10-01
We theoretically investigate the coherent transfer of one electron between the ground states of a double coupled quantum dot structure. The coherent transfer of the electron is externally controlled by applied electromagnetic fields with on- or close-resonance driving frequencies and various shapes and duration. We derive the analytical expressions for the parameters of the external fields by approximating the quantum dot system as a three-level ?-type system. The analytical solutions are compared with numerical results and good agreement is found. The control methods developed here are applicable in symmetric and asymmetric quantum dot nanostructures.
Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study
Ramrez-Morales, A.; Martnez-Orozco, J. C.; Rodrguez-Vargas, I.
2014-05-15
The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.
PREFACE: Quantum dots as probes in biology
NASA Astrophysics Data System (ADS)
Cieplak, Marek
2013-05-01
The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated photosynthetic systems. The next paper, by Olejnik et al, discussed metallic QDs which enhance photosynthetic function in light-harvesting biomolecular complexes. Such hybrid structures with gold QDs are shown to exhibit a strong increase in the fluorescence quantum yield. The next two papers, by Sikora et al and Kaminska et al deal with the ZnO nanoparticles passivated by MgO. In the first of these two papers, the authors describe the behavior of ZnO/MgO when introduced to human cancer cells. In the second, the authors describe the QDs with an extra outer layer of Fe2O3 which makes the nanoparticles superparamagnetic and also capable of generation of reactive oxygen species which could be applied to form localized centers of toxicity for cancer treatment. Finally, in the last paper by Yatsunenko et al, the authors discuss several semiconducting QDs like ZnO with various rare-earth dopands. They propose a microwave-driven hydrothermal technology to make them, characterize their luminescence and demonstrate their usefulness in the early recognition of cancer tissues. Quantum dots as probes in biology contents Quantum dots as probes in biologyMarek Cieplak Luminescent nanoparticles and their applications in the life sciencesVarun K A Sreenivasan, Andrei V Zvyagin and Ewa M Goldys Ferredoxin:NADP+ oxidoreductase in junction with CdSe/ZnS quantum dots: characteristics of an enzymatically active nanohybrid Krzysztof Szczepaniak, Remigiusz Worch and Joanna Grzyb Spectroscopic studies of plasmon coupling between photosynthetic complexes and metallic quantum dotsMaria Olejnik, Bartosz Krajnik, Dorota Kowalska, Guanhua Lin and Sebastian Mackowski Luminescence of colloidal ZnO nanoparticles synthesized in alcohols and biological application of ZnO passivated by MgOBożena Sikora, Krzysztof Fronc, Izabela Kamińska, Kamil Koper, Piotr Stępień and Danek Elbaum Novel ZnO/MgO/Fe2O3 composite optomagnetic nanoparticles I Kamińska, B Sikora, K Fronc, P Dziawa, K Sobczak, R Minikayev, W Paszkowicz and D Elbaum Impact of yttria stabilization on Tb3+ intra-shell luminescence efficiency in zirconium dioxide nanopowdersS Yatsunenko, J Kaszewski, J Grzyb, I Pełech, M M Godlewski, E Mijowska, U Narkiewicz and M Godlewski
Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots
NASA Astrophysics Data System (ADS)
Norris, T. B.; Kim, K.; Urayama, J.; Wu, Z. K.; Singh, J.; Bhattacharya, P. K.
2005-07-01
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection.
Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.
2010-05-03
The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN{sub x}) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
Shape and stability of quantum dots
NASA Astrophysics Data System (ADS)
Pehlke, E.; Moll, N.; Kley, A.; Scheffler, M.
The formation of dislocation-free three-dimensional islands by heteroepitaxial growth of lattice mismatched materials is utilized to produce partially ordered arrays of quantum dots. The equilibrium shape of these islands results from the competition between surface and elastic energies. We have studied the system InAs/GaAs(001) in detail. InAs surface energies have been computed ab initio for several orientations, and the elastic energy of the islands has been calculated within a continuum theory. The resulting equilibrium islands are hills bounded by {110}, {111}, and { } facets and a (001) surface on top. We compare to experiment and discuss the influence of growth kinetics on the shape.
Capillary electrophoresis of quantum dots: minireview.
Stanisavljevic, Maja; Vaculovicova, Marketa; Kizek, Rene; Adam, Vojtech
2014-07-01
It has been already three decades, since the fluorescent nanocrystals called quantum dots (QDs) appeared and attracted attention of a broad scientific community. Their excellent not only optical but also electronic properties predetermined QDs for utilization in a variety of areas. Besides lasers, solar cells, and/or computers, QDs have established themselves in the field of (bio)chemical labeling as well as medical imaging. However, due to the numerous application possibilities of QDs, there are high demands on their properties that need to be precisely controlled and characterized. CE with its versatile modes and possibilities of detection was found to be an effective tool not only for characterization of QDs size and/or surface properties but also for monitoring of their interactions with other molecules of interest. In this minireview, we are giving short insight in analysis of QDs by CE, and summarizing the advantages of this method for QDs characterization. PMID:24648211
Subdiffusive exciton transport in quantum dot solids.
Akselrod, Gleb M; Prins, Ferry; Poulikakos, Lisa V; Lee, Elizabeth M Y; Weidman, Mark C; Mork, A Jolene; Willard, Adam P; Bulovi?, Vladimir; Tisdale, William A
2014-06-11
Colloidal quantum dots (QDs) are promising materials for use in solar cells, light-emitting diodes, lasers, and photodetectors, but the mechanism and length of exciton transport in QD materials is not well understood. We use time-resolved optical microscopy to spatially visualize exciton transport in CdSe/ZnCdS core/shell QD assemblies. We find that the exciton diffusion length, which exceeds 30 nm in some cases, can be tuned by adjusting the inorganic shell thickness and organic ligand length, offering a powerful strategy for controlling exciton movement. Moreover, we show experimentally and through kinetic Monte Carlo simulations that exciton diffusion in QD solids does not occur by a random-walk process; instead, energetic disorder within the inhomogeneously broadened ensemble causes the exciton diffusivity to decrease over time. These findings reveal new insights into exciton dynamics in disordered systems and demonstrate the flexibility of QD materials for photonic and optoelectronic applications. PMID:24807586
Spectral Properties of Multiply Charged Quantum Dots
Yalcin, Sibel Ebru; Labastide, Joelle A.; Sowle, Danielle L.; Barnes, Michael D.
2011-10-12
Spectrally resolved fluorescence imaging of single CdSe/ZnS quantum dots (QDs), charged by electrospray deposition under negative bias has revealed a surprising net blue shift (~60 meV peak-to-peak) in the distribution of center frequencies in QD band-edge luminescence. Electrostatic force microscopy (EFM) on the electrospray QD samples showed a subpopulation of charged QDs with 4.7 0.7 excess electrons, as well as a significant fraction of uncharged QDs as evidenced by the distinct cantilever response under bias. We show that the blue-shifted peak recombination energy can be understood as a first-order electronic perturbation that affects the band-edge electron- and hole-states differently. These studies provide new insight into the role of electronic perturbations of QD luminescence by excess charges.
Quantum dots: synthesis, bioapplications, and toxicity
2012-01-01
This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials. PMID:22929008
Quantum dots as a possible oxygen sensor.
Zi?czyk, Paulina; Kur-Kowalska, Katarzyna; Przybyt, Ma?gorzata; Miller, Ewa
2014-05-21
Results of studies on optical properties of low toxicity quantum dots (QDs) obtained from copper doped zinc sulfate are discussed in the paper. The effect of copper admixture concentration and solution pH on the fluorescence emission intensity of QDs was investigated. Quenching of QDs fluorescence by oxygen was reported and removal of the oxygen from the environment by two methods was described. In the chemical method oxygen was eliminated by adding sodium sulfite, in the other method oxygen was removed from the solution using nitrogen gas. For elimination of oxygen by purging the solution with nitrogen the increase of fluorescence intensity with decreasing oxygen concentration obeyed Stern-Volmer equation indicating quenching. For the chemical method Stern-Volmer equation was not fulfilled. The fluorescence decays lifetimes were determined and the increase of mean lifetimes at the absence of oxygen support hypothesis that QDs fluorescence is quenched by oxygen. PMID:24568848
Multifunctional Quantum Dots for Personalized Medicine
Zrazhevskiy, Pavel; Gao, Xiaohu
2009-01-01
Successes in biomedical research and state-of-the-art medicine have undoubtedly improved the quality of life. However, a number of diseases, such as cancer, immunodeficiencies, and neurological disorders, still evade conventional diagnostic and therapeutic approaches. A transformation towards personalized medicine may help to combat these diseases. For this, identification of disease molecular fingerprints and their association with prognosis and targeted therapy must become available. Quantum dots (QDs), semiconductor nanocrystals with unique photo-physical properties, represent a novel class of fluorescence probes to address many of the needs of personalized medicine. This review outlines the properties of QDs that make them a suitable platform for advancing personalized medicine, examines several proof-of-concept studies showing utility of QDs for clinically relevant applications, and discusses current challenges in introducing QDs into clinical practice. PMID:20161004
Highly Fluorescent Noble Metal Quantum Dots
Zheng, Jie; Nicovich, Philip R.; Dickson, Robert M.
2009-01-01
Highly fluorescent, water-soluble, few-atom noble metal quantum dots have been created that behave as multi-electron artificial atoms with discrete, size-tunable electronic transitions throughout the visible and near IR. These molecular metals exhibit highly polarizable transitions and scale in size according to the simple relation, Efermi/N1/3, predicted by the free electron model of metallic behavior. This simple scaling indicates that fluorescence arises from intraband transitions of free electrons and that these conduction electron transitions are the low number limit of the plasmon the collective dipole oscillations occurring when a continuous density of states is reached. Providing the missing link between atomic and nanoparticle behavior in noble metals, these emissive, water-soluble Au nanoclusters open new opportunities for biological labels, energy transfer pairs, and light emitting sources in nanoscale optoelectronics. PMID:17105412
Quantum confinement in hydrogen bond of DNA and RNA
NASA Astrophysics Data System (ADS)
dos Santos, C. S.; Drigo Filho, E.; Ricotta, R. M.
2015-04-01
The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.
Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures
Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.
2012-09-15
Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.
Undoped accumulation-mode Si/SiGe quantum dots.
Borselli, M G; Eng, K; Ross, R S; Hazard, T M; Holabird, K S; Huang, B; Kiselev, A A; Deelman, P W; Warren, L D; Milosavljevic, I; Schmitz, A E; Sokolich, M; Gyure, M F; Hunter, A T
2015-09-18
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function-control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the [Formula: see text] charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage. PMID:26302871
NASA Astrophysics Data System (ADS)
Goswami, Mrinmoy; Ghosh, Ranajit; Maruyama, Takahiro; Meikap, Ajit Kumar
2016-02-01
A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7-4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.
NASA Astrophysics Data System (ADS)
Thibert, Arthur Joseph, III
Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh laboratory (UCD). The measured signals were decomposed into the constituent dynamics of three transient populations: hot tightly bound excitons, relaxed tightly bound excitons, and separated trapped carriers (holes and electrons). The influenes of three external factors affecting the observed dynamics were explored: (1) excitation wavelength, (2) excitation fluence, and (3) presence of the hole scavenger HS -. Both higher-energy excitation photons and higher-intensity excitation induce slower relaxation of charge carriers to the band edge due to the need to dissipate excess excitation energy. Nonlinear decay kinetics of the relaxed exciton population is observed and demonstrated to arise from bimolecular trapping of excitons with low-density trap sites located at CdSe NR surface sites instead of the commonly resolved multiparticle Auger recombination mechanism. This is supported by the observed linear excitation-fluence dependence of the trapped-carrier population that is n umerically simulated and found to deviate from the excitation fluence dependence expected of Auger recombination kinetics. Introducing hole scavenging HS- has a negligible effect on the exciton kinetics, including migration and dissociation, and instead passivates surface trap states to induce the rapid elimination of holes after exciton dissociation. This increases the lifetime of the reactive electron population and increases measured photocatalytic H2 generation activity. A broad (200 nm) and persistent (20 ps) stimulated emission observed in the tightly bound excitons suggests their potential use as broadband microlasers. In chapter 3 (JPCL, 2688, 2011), the photocatalytic H2O splitting activities of CdSe and CdSe/CdS core/shell quantum dots, which were also synthesized in the Osterloh laboratory (UCD) are contrasted. CdSe/CdS core/shell quantum dots constructed from 4.0 nm CdSe quantum dots are shown to be strongly active for visible-light-driven photocatalytic H2 evolution in 0.1M Na 2S/Na2SO3 solution with a turnover number of 9.94 after 5 h at 103.9 ?mol/h. CdSe quantum dots themselves are only marginally active in 0.1 M Na2S/Na2SO3 solution with a turnover number of 1.10 after 5 h at 11.53 ?mol/h, while CdSe quantum dots in pure H2O are found to be completely inactive. Broad-band transient absorption spectroscopy is used to elucidate the mechanisms that facilitate the enhancement in the CdSe core/shell quantum dots, which is attributed to passivation of surface-deep trap states with energies lying below the reduction potential necessary for H2O reduction. Thus, it is shown that surface trapping dynamics and energetics can be manipulated to dictate the photocatalytic activities of novel CdSe quantum dot based photocatalytic materials. Chapter 4 builds upon this work examining the differences in dynamics that occur upon passivation of water soluble CdZnS alloy cores with ZnS shells, which were produced in the Snee laboratory (UI Chicago), via 400 nm pump broadband probe ultrafast transient absorption spectroscopy, and global analysis modeling. We also examine the perturbation invoked on charge carrier dynamics caused by growing Pd nanoparticles on the CdZnS/ZnS shell surface in-situ and note the cyclical charge carrier transfer that takes place. Both the CdZnS core and CdZnS/ZnS core/shell quantum dots exhibit unusually long lived excited states (much > 8 ns) while the CdZnS/ZnS.Pd tandem core/shell quantum dots recover much quicker (~3 ns). Additionally, ultrafast excitation fluence dependencies are used to characterize Auger recombination and the presence of two different trap state populations observable in the visible spectrum. In chapter 5 (JACS, 20664, 2011), we switch from examining direct band-gap chalcogenide based quantum dots to Si quantum dots synthesized in the Kauzlarich laboratory (UCD), which exhibit an indirect band-gap. Here a microwave-assisted reaction to produce hydrogen-terminated silicon quantum dots is discussed. The Si quantum dots were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si quantum dots, and a modified Stber process produced silica-encapsulated Si quantum dots. Both methods produce water-soluble quantum dots with maximum emission at 414 nm, and after purification, the quantum dots exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the quantum dots have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the quantum dots and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si quantum dots is interpreted as a formation and decay of a charge-transfer excited state between the delocalized ? electrons of the carbon linker and the Si core excitons. This charge transfer state is stable for ~4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without charge transfer dynamics. Appendix I (Chem. Mat., 1220, 2010), addresses the long-time (?s) transient kinetics associated with TiO2 and layered titanates (TBA2 2Ti4O9), which were synthesized in the Osterloh laboratory (UCD). Transient absorption data reveal that photogenerated electrons become trapped in mid band-gap states, from which they decay exponentially with a time-constant of 43.67 + 0.28 ms in titanates, which is much slower than the 68 + 1 ns observed for TiO2 nanocrystals. The slower kinetics observed for the TBA 2Ti4O9 nanosheets originates either from the presence of deeper trap sites on the sheets vs. the nanoparticles, more trap sites, or from more effective electron-hole separation because of the micrometer dimensions of the 2D lattice. Appendix II, depicts the visible solar spectrum at sea level detailing the percentage of photons and energy that exist within certain wavelength ranges.
Engineering of perturbation effects in onion-like heteronanocrystal quantum dot-quantum well
NASA Astrophysics Data System (ADS)
SalmanOgli, A.; Rostami, R.
2013-10-01
In this article, the perturbation influences on optical characterization of quantum dot and quantum dot-quantum well (modified quantum dot) heteronanocrystal is investigated. The original aim of this article is to investigate the quantum dot-quantum well heteronanocrystal advantages and disadvantages, when used as a functionalized particle in biomedical applications. Therefore, all of the critical features of quantum dots are fundamentally studied and their influences on optical properties are simulated. For the first time, the perturbation effects on optical characteristics are observed in the quantum dot-quantum well heteronanocrystals by 8-band K.P theory. The impact of perturbation on optical features such as photoluminescence and shifting of wavelength is studied. The photoluminescence and operation wavelength of quantum dots play a vital role in biomedical applications, where their absorption and emission in biological assays are altered by shifting of wavelength. Furthermore, in biomedical applications, by tuning the emission wavelengths of the quantum dot into far-red and near-infrared ranges, non-invasive in-vivo imaging techniques have been easily developed. In this wavelength window, tissue absorption, scattering and auto-fluorescence intensities have minimum quantities; thus fixing or minimizing of wavelength shifting can be regarded as an important goal which is investigated in this work.
Effects of multiple organic ligands on size uniformity and optical properties of ZnSe quantum dots
Archana, J.; Navaneethan, M.; Hayakawa, Y.; Ponnusamy, S.; Muthamizhchelvan, C.
2012-08-15
Highlights: ► Highly monodispersed ZnSe quantum dots have been synthesized by wet chemical route. ► Strong quantum confinement effect have been observed in ∼ 4 nm ZnSe quantum dots. ► Enhanced ultraviolet near band emission have been obtained using long chain polymer. -- Abstract: The effects of multi-ligands on the formation and optical transitions of ZnSe quantum dots have been investigated. The dots are synthesized using 3-mercapto-1,2-propanediol and polyvinylpyrrolidone ligands, and have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV–visible absorption spectroscopy, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy. TEM reveals high monodispersion with an average size of 4 nm. Polymer-stabilized, organic ligand-passivated ZnSe quantum dots exhibit strong UV emission at 326 nm and strong quantum confinement in the UV–visible absorption spectrum. Uniform size and suppressed surface trap emission are observed when the polymer ligand is used. The possible growth mechanism is discussed.
Quantum computing with quantum dots using the Heisenberg exchange interaction
NASA Astrophysics Data System (ADS)
Dewaele, Nick J.
One of the most promising systems for creating a working quantum computer is the triple quantum dots in a linear semiconductor. One of the biggest advantages is that we are able to perform Heisenberg exchange gates on the physical qubits. These exchanges are both fast and relatively low energy. Which means that they would be excellent for producing fast and accurate operations. In order to prevent leakage errors we use a 3 qubit DFS to encode a logical qubit. Here we determine the theoretical time dependent affects of applying the Heisenberg exchange gates in the DFS basis as well as the effect of applying multiple exchange gates at the same time. we also find that applying two heisenberg exchange gates at the same time is an effective way of implementing a leakage elimination operator.
Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
NASA Astrophysics Data System (ADS)
Altaisky, Mikhail V.; Zolnikova, Nadezhda N.; Kaputkina, Natalia E.; Krylov, Victor A.; Lozovik, Yurii E.; Dattani, Nikesh S.
2016-02-01
We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.
Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells.
Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu
2016-12-01
Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells. PMID:26781285
Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells
NASA Astrophysics Data System (ADS)
Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu
2016-01-01
Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells.
Heterovalent cation substitutional doping for quantum dot homojunction solar cells
NASA Astrophysics Data System (ADS)
Stavrinadis, Alexandros; Rath, Arup K.; de Arquer, F. Pelayo Garca; Diedenhofen, Silke L.; Magn, Csar; Martinez, Luis; So, David; Konstantatos, Gerasimos
2013-12-01
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.
Heterovalent cation substitutional doping for quantum dot homojunction solar cells.
Stavrinadis, Alexandros; Rath, Arup K; de Arquer, F Pelayo Garca; Diedenhofen, Silke L; Magn, Csar; Martinez, Luis; So, David; Konstantatos, Gerasimos
2013-01-01
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%. PMID:24346430
Probing specific DNA sequences with luminescent semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Taylor, Jason R.; Nie, Shuming
2001-06-01
The development of new fluorescent probes has impacted many areas of research such as medical diagnostics, high-speed drug screening, and basic molecular biology. Main limitations to traditional organic fluorophores are their relatively weak intensities, short life times (eg., photobleaching), and broad emission spectra. The desire for more intense fluorescent probes with higher quality photostability and narrow emission wavelengths has led to the development and utilization of semiconductor quantum dots as a new label. In this work, we have modified semicondutor quantum dots (QD's) with synthetic oligonucleotides to probe a specific DNA target sequence both in solution as well as immobilized on a solid substrate. In the first approach, specific target sequences are detected in solution by using short oligonucleotide probes, which are covalently linked to semiconductor quantum dots. In the second approach, DNA target sequences are covalently attached to a glass substrate and detected using oligonucleotides linked to semiconductor quantum dots.
Prospects for thermoelectricity in quantum dot hybrid arrays
NASA Astrophysics Data System (ADS)
Urban, Jeffrey J.
2015-12-01
The electronic, chemical and mechanical properties of quantum dot structures may lead to thermoelectric devices with a range of advantages with respect to existing ones based on bulk polycrystalline materials.
Heterovalent cation substitutional doping for quantum dot homojunction solar cells
Stavrinadis, Alexandros; Rath, Arup K.; de Arquer, F. Pelayo Garca; Diedenhofen, Silke L.; Magn, Csar; Martinez, Luis; So, David; Konstantatos, Gerasimos
2013-01-01
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%. PMID:24346430
Silver-enhanced fluorescence emission of single quantum dot nanocomposites
Fu, Yi; Zhang, Jian; Lakowicz, Joseph R.
2009-01-01
A novel plasmon-coupled quantum dot (QD) nanocomposite via covalently interfacing the QD surfaces with silver nanoparticles was developed with greatly reduced blinking and enhanced emission fluorescence. PMID:19209313
What future for quantum dot-based light emitters?
NASA Astrophysics Data System (ADS)
Nurmikko, Arto
2015-12-01
Synthesis of semiconductor colloidal quantum dots by low-cost, solution-based methods has produced an abundance of basic science. Can these materials be transformed to high-performance light emitters to disrupt established photonics technologies, particularly semiconductor lasers?
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.
2010-04-13
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M. (Ithaca, NY); Edel, Joshua B. (Brookline, MA); Samiee, Kevan T. (Ithaca, NY); Craighead, Harold G. (Ithaca, NY)
2008-07-29
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
Growth of cubic GaN quantum dots
Schupp, T.; Lischka, K.; As, D. J.; Meisch, T.; Neuschl, B.; Feneberg, M.; Thonke, K.
2010-11-01
Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid process. The density of the quantum dots was controllable in a range of 10{sup 8} cm{sup -2} to 10{sup 12} cm{sup -2}. Reflection high energy electron diffraction analysis confirmed the zinc-blende crystal structure of the QDs. Photoluminescence spectroscopy revealed the optical activity of the QDs, the emission energy was in agreement with the exciton ground state transition energy of theoretical calculations.
Entanglement switching via the Kondo effect in triple quantum dots
NASA Astrophysics Data System (ADS)
Tooski, S. B.; Bu?ka, Bogdan R.; itko, Rok; Ramak, Anton
2014-06-01
We consider a triple quantum dot system in a triangular geometry with one of the dots connected to metallic leads. Using Wilson's numerical renormalization group method, we investigate quantum entanglement and its relation to the thermodynamic and transport properties in the regime where each of the dots is singly occupied on average, but with non-negligible charge fluctuations. It is shown that even in the regime of significant charge fluctuations the formation of the Kondo singlets induces switching between separable and perfectly entangled states. The quantum phase transition between unentangled and entangled states is analyzed quantitatively and the corresponding phase diagram is explained by exactly solvable spin model. In the framework of an effective model we also explain smearing of the entanglement transition for cases when the symmetry of the triple quantum dot system is relaxed.
Quantum dots in nanomedicine: recent trends, advances and unresolved issues.
Volkov, Yuri
2015-12-18
The review addresses the current state of progress in the use of ultra-small nanoparticles from the category of quantum dots (QDs), which presently embraces a widening range of nanomaterials of different nature, including "classical" semiconductor groups III-V and II-VI nanocrystals, along with more recently emerged carbon, silicon, gold and other types of nanoparticles falling into this class of nanomaterials due to their similar physical characteristics such as small size and associated quantum confinement effects. A diverse range of QDs applications in nanomedicine has been extensively summarised previously in numerous publications. Therefore, this review is not intended to provide an all-embracing survey of the well documented QDs uses, but is rather focused on the most recent emerging developments, concepts and outstanding unresolved problematic and sometimes controversial issues. Over 125 publications are overviewed and discussed here in the context of major nanomedicine domains, i.e. medical imaging, diagnostics, therapeutic applications and combination of them in multifunctional theranostic systems. PMID:26168726
Copper-indium-selenide quantum dot-sensitized solar cells.
Yang, Jiwoong; Kim, Jae-Yup; Yu, Jung Ho; Ahn, Tae-Young; Lee, Hyunjae; Choi, Tae-Seok; Kim, Young-Woon; Joo, Jin; Ko, Min Jae; Hyeon, Taeghwan
2013-12-21
We present a new synthetic process of near infrared (NIR)-absorbing copper-indium-selenide (CISe) quantum dots (QDs) and their applications to efficient and completely heavy-metal-free QD-sensitized solar cells (QDSCs). Lewis acid-base reaction of metal iodides and selenocarbamate enabled us to produce chalcopyrite-structured CISe QDs with controlled sizes and compositions. Furthermore, gram-scale production of CISe QDs was achieved with a high reaction yield of ~73%, which is important for the commercialization of low-cost photovoltaic (PV) devices. By changing the size and composition, electronic band alignment of CISe QDs could be finely tuned to optimize the energetics of the effective light absorption and injection of electrons into the TiO2 conduction band (CB). These energy-band-engineered QDs were applied to QDSCs, and the quantum-confinement effect on the PV performances was clearly demonstrated. Our best cell yielded a conversion efficiency of 4.30% under AM1.5G one sun illumination, which is comparable to the performance of the best solar cells based on toxic lead chalcogenide or cadmium chalcogenide QDs. PMID:24177572
Chlorine doped graphene quantum dots: Preparation, properties, and photovoltaic detectors
Zhao, Jianhong; Xiang, Jinzhong; Tang, Libin Ji, Rongbin Yuan, Jun; Zhao, Jun; Yu, Ruiyun; Tai, Yunjian; Song, Liyuan
2014-09-15
Graphene quantum dots (GQDs) are becoming one of the hottest advanced functional materials because of the opening of the bandgap due to quantum confinement effect, which shows unique optical and electrical properties. The chlorine doped GQDs (Cl-GQDs) have been fabricated by chemical exfoliation of HCl treated carbon fibers (CFs), which were prepared from degreasing cotton through an annealing process at 1000 °C for 30 min. Raman study shows that both G and 2D peaks of GQDs may be redshifted (softened) by chlorine doping, leading to an n-type doping. The first vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbing and electron-accepting roles for (Cl)-GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as ∼10{sup 5} at room temperature using a 405 nm laser irradiation under the reverse bias voltage. The study expands the application of (Cl)-GQDs to the important optoelectronic detection devices.
Quantum dots as optical labels for ultrasensitive detection of polyphenols.
Akshath, Uchangi Satyaprasad; Shubha, Likitha R; Bhatt, Praveena; Thakur, Munna Singh
2014-07-15
Considering the fact that polyphenols have versatile activity in-vivo, its detection and quantification is very much important for a healthy diet. Laccase enzyme can convert polyphenols to yield mono/polyquinones which can quench Quantum dots fluorescence. This phenomenon of charge transfer from quinones to QDs was exploited as optical labels to detect polyphenols. CdTe QD may undergo dipolar interaction with quinones as a result of broad spectral absorption due to multiple excitonic states resulting from quantum confinement effects. Thus, "turn-off" fluorescence method was applied for ultrasensitive detection of polyphenols by using laccase. We observed proportionate quenching of QDs fluorescence with respect to polyphenol concentration in the range of 100 µg to 1 ng/mL. Also, quenching of the photoluminescence was highly efficient and stable and could detect individual and total polyphenols with high sensitivity (LOD-1 ng/mL). Moreover, proposed method was highly efficient than any other reported methods in terms of sensitivity, specificity and selectivity. Therefore, a novel optical sensor was developed for the detection of polyphenols at a sensitive level based on the charge transfer mechanism. PMID:24607583
Raman phonon emission in a driven double quantum dot.
Colless, J I; Croot, X G; Stace, T M; Doherty, A C; Barrett, S D; Lu, H; Gossard, A C; Reilly, D J
2014-01-01
The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in a strong piezoelectric interaction between lattice acoustic phonons and qubit states with an electric dipole, a potential source of decoherence during charge-sensitive operations. Here we report phonon generation in a GaAs double quantum dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analogue of the Raman effect, phonon emission produces population inversion of the two-level system and leads to rapid decoherence of the qubit when the microwave energy exceeds the level splitting. Comparing data with a theoretical model suggests that phonon emission is a sensitive function of the device geometry. PMID:24759675
Raman phonon emission in a driven double quantum dot
NASA Astrophysics Data System (ADS)
Colless, J. I.; Croot, X. G.; Stace, T. M.; Doherty, A. C.; Barrett, S. D.; Lu, H.; Gossard, A. C.; Reilly, D. J.
2014-04-01
The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in a strong piezoelectric interaction between lattice acoustic phonons and qubit states with an electric dipole, a potential source of decoherence during charge-sensitive operations. Here we report phonon generation in a GaAs double quantum dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analogue of the Raman effect, phonon emission produces population inversion of the two-level system and leads to rapid decoherence of the qubit when the microwave energy exceeds the level splitting. Comparing data with a theoretical model suggests that phonon emission is a sensitive function of the device geometry.
Chlorine doped graphene quantum dots: Preparation, properties, and photovoltaic detectors
NASA Astrophysics Data System (ADS)
Zhao, Jianhong; Tang, Libin; Xiang, Jinzhong; Ji, Rongbin; Yuan, Jun; Zhao, Jun; Yu, Ruiyun; Tai, Yunjian; Song, Liyuan
2014-09-01
Graphene quantum dots (GQDs) are becoming one of the hottest advanced functional materials because of the opening of the bandgap due to quantum confinement effect, which shows unique optical and electrical properties. The chlorine doped GQDs (Cl-GQDs) have been fabricated by chemical exfoliation of HCl treated carbon fibers (CFs), which were prepared from degreasing cotton through an annealing process at 1000 C for 30 min. Raman study shows that both G and 2D peaks of GQDs may be redshifted (softened) by chlorine doping, leading to an n-type doping. The first vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbing and electron-accepting roles for (Cl)-GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as 105 at room temperature using a 405 nm laser irradiation under the reverse bias voltage. The study expands the application of (Cl)-GQDs to the important optoelectronic detection devices.
Electron transport through individual Ge self-assembled quantum dots on Si
Chung, H.-C.; Chu, W.-H.; Liu, C.-P.
2006-08-21
Electrical properties of self-assembled quantum dots have been the subject of intensive research due to quantum confinement. Here the authors report on the fabrication of Ge quantum dots (QDs) onto Si (100) by ultrahigh-vacuum ion beam sputtering and the electrical properties of individual QDs. Transmission electron microscopy images show that samples with completely incoherent or coherent semispherical islands can be produced under different ion energies. The current-voltage (I-V) characteristics with conductive atomic force microscopy at room temperature. exhibit linear behavior at low bias and nonlinear behavior at large bias from coherent islands, whereas the staircase structures are clearly observed in the I-V curve from incoherent islands, which are attributed to electron tunneling through the quantized energy levels of a single Ge QD.
Interaction of human serum albumin with CdTe quantum dots probed by optical spectroscopy methods
NASA Astrophysics Data System (ADS)
Savchuk, A. I.; Stolyarchuk, I. D.; Grygoryshyn, P. M.; Antonyuk, O. P.; Savchuk, T. A.
2013-12-01
In this work, colloidal CdTe nanoparticles were synthesized by using thioglycolic acid (TGA) as passivator. In the absorption spectra of the colloidal CdTe nanoparticles exciton band was found to be shifted to higher photon energy as compared with bulk crystals due to quantum confinement effect. It was shown that addition of human serum albumin (HSA) to colloidal CdTe nanoparticles led to a gradual decrease of absorption and broadening of exciton structure. However, energy position of the exciton band in this case remains not shifted. In photoluminescence spectra of solution CdTe quantum dots and HSA so-called quenching effect has been observed. The quenching of HSA fluorescence intensity by semiconductor nanoparticles was analysed in framework of the formation of quantum dots-HSA protein complex.
Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate
NASA Technical Reports Server (NTRS)
Qiu, Y.; Uhl, D.
2002-01-01
InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Spin Qubits with Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Tarucha, Seigo; Yamamoto, Michihisa; Oiwa, Akira; Choi, Byung-Soo; Tokura, Yasuhiro
This section describes recent progresses on the research of spin qubits realized in semiconductor quantum dot (QD) systems. After we argue the scheme of initialization and detection of individual spin states, we discuss the key idea of the universal gates constituted with QDs proposed by D. Loss and D. P. DiVincenzo. In order to achieve universal quantum gate operations, we need single qubit coherent manipulations and two qubit controlled-NOT or control-Z gates. For the first type of gate, instead of the standard rf magnetic field driven electron spin resonance (ESR), we proposed and implemented electric dipole induced spin resonance (EDSR), which has various advantages over ESR, including low dissipation, individual access to the spins and integrability. We describes recent progress in the fast Rabi oscillations. The second type of gate can be realized by the exchange coupling between nearby QDs. We also discuss the experiments combining single- and two-qubit operations. Finally, we argue the progress of the coupling of the spins in QDs with the "flying qubits", namely, photons of visible or microwave and itinerant electrons in the wave guides.
Coherent spin transport through dynamic quantum dots.
Stotz, James A H; Hey, Rudolf; Santos, Paulo V; Ploog, Klaus H
2005-08-01
Spin transport and manipulation in semiconductors have been studied intensively with the ultimate goal of realizing spintronic devices. Previous work in GaAs has focused on controlling the carrier density, crystallographic orientation and dimensionality to limit the electron spin decoherence and allow transport over long distances. Here, we introduce a new method for the coherent transport of spin-polarized electronic wave packets using dynamic quantum dots (DQDs) created by the piezoelectric field of coherent acoustic phonons. Photogenerated spin carriers transported by the DQDs in undoped GaAs (001) quantum wells exhibit a spin coherence length exceeding 100 microm, which is attributed to the simultaneous control of the carrier density and the dimensionality by the DQDs during transport. In the absence of an applied magnetic field, we observe the precession of the electron spin induced by the internal magnetic field associated with the spin splitting of the conduction band (Dresselhaus term). The coherent manipulation of the precession frequency is also achieved by applying an external magnetic field. PMID:16041380
Coherent radiation by quantum dots and magnetic nanoclusters
Yukalov, V. I.; Yukalova, E. P.
2014-03-31
The assemblies of either quantum dots or magnetic nanoclusters are studied. It is shown that such assemblies can produce coherent radiation. A method is developed for solving the systems of nonlinear equations describing the dynamics of such assemblies. The method is shown to be general and applicable to systems of different physical nature. Despite mathematical similarities of dynamical equations, the physics of the processes for quantum dots and magnetic nanoclusters is rather different. In a quantum dot assembly, coherence develops due to the Dicke effect of dot interactions through the common radiation field. For a system of magnetic clusters, coherence in the spin motion appears due to the Purcell effect caused by the feedback action of a resonator. Self-organized coherent spin radiation cannot arise without a resonator. This principal difference is connected with the different physical nature of dipole forces between the objects. Effective dipole interactions between the radiating quantum dots, appearing due to photon exchange, collectivize the dot radiation. While the dipolar spin interactions exist from the beginning, yet before radiation, and on the contrary, they dephase spin motion, thus destroying the coherence of moving spins. In addition, quantum dot radiation exhibits turbulent photon filamentation that is absent for radiating spins.
Quantum Phase Transitions in Cavity Coupled Dot systems
NASA Astrophysics Data System (ADS)
Kasisomayajula, Vijay; Russo, Onofrio
2011-03-01
We investigate a Quantum Dot System, in which the transconductance, in part, is due to spin coupling, with each dot subjected to a biasing voltage. When this system is housed in a QED cavity, the cavity dot coupling alters the spin coupling of the coupled dots significantly via the Purcell Effect. In this paper we show the extent to which one can control the various coupling parameters: the inter dot coupling, the individual dots coupling with the cavity and the coupled dots coupling with the cavity as a single entity. We show that the dots coupled to each other and to the cavity, the spin transport can be controlled selectively. We derive the conditions for such control explicitly. Further, we discuss the Quantum phase transition effects due to the charge and spin transport through the dots. The electron transport through the dots, electron-electron spin interaction and the electron-photon interaction are treated using the Non-equilibrium Green's Function Formalism. http://publish.aps.org/search/field/author/Trif_Mircea (Trif Mircea), http://publish.aps.org/search/field/author/Golovach_Vitaly_N (Vitaly N. Golovach), and http://publish.aps.org/search/field/author/Loss_Daniel (Daniel Loss), Phys. Rev. B 75, 085307 (2007)
Uchida, Takafumi Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira
2015-02-28
Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD.
Role of quantum confinement in luminescence efficiency of group IV nanostructures
NASA Astrophysics Data System (ADS)
Barbagiovanni, E. G.; Lockwood, D. J.; Rowell, N. L.; Costa Filho, R. N.; Berbezier, I.; Amiard, G.; Favre, L.; Ronda, A.; Faustini, M.; Grosso, D.
2014-01-01
Experimental results obtained previously for the photoluminescence efficiency (PLeff) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PLeff versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when EG˜(D2+D)-1. We identified that above D ≈ 6.2 nm: EG˜D-1 due to a changing effective mass (EM), while below D ≈ 4.6 nm: EG˜D-2 due to electron/hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small D.
Role of quantum confinement in luminescence efficiency of group IV nanostructures
Barbagiovanni, E. G.; Lockwood, D. J.; Rowell, N. L.; Costa Filho, R. N.; Berbezier, I.; Amiard, G.; Favre, L.; Ronda, A.; Faustini, M.; Grosso, D.
2014-01-28
Experimental results obtained previously for the photoluminescence efficiency (PL{sub eff}) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PL{sub eff} versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when E{sub G}∼(D{sup 2}+D){sup −1}. We identified that above D ≈ 6.2 nm: E{sub G}∼D{sup −1} due to a changing effective mass (EM), while below D ≈ 4.6 nm: E{sub G}∼D{sup −2} due to electron/hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small D.
Ultrafast optical properties of lithographically defined quantum dot amplifiers
Miaja-Avila, L.; Verma, V. B.; Mirin, R. P.; Silverman, K. L.; Coleman, J. J.
2014-02-10
We measure the ultrafast optical response of lithographically defined quantum dot amplifiers at 40 K. Recovery of the gain mostly occurs in less than 1 picosecond, with some longer-term transients attributable to carrier heating. Recovery of the absorption proceeds on a much longer timescale, representative of relaxation between quantum dot levels and carrier recombination. We also measure transparency current-density in these devices.
Dissipative laser bullets in dielectric media containing quantum dots
NASA Astrophysics Data System (ADS)
Gubin, M. Yu.; Leksin, A. Yu.; Gladush, M. G.; Arakelian, S. M.; Prokhorov, A. V.
2015-09-01
The formation of three-dimensional spatiotemporal dissipative solitons (laser bullets) in a dense ensemble of two-level quantum dots imbedded into a dielectric host is analyzed theoretically taking into account complex local field corrections. The possibility of satisfying stability conditions for laser bullets in a wide range of concentration and quantum dot size parameters is demonstrated. Substantial increase in dimensions of the found areas of stability when choosing all-dielectric metamaterials as a host medium is revealed.
Propagating surface plasmon induced photon emission from quantum dots.
Wei, Hong; Ratchford, Daniel; Li, Xiaoqin Elaine; Xu, Hongxing; Shih, Chih-Kang
2009-12-01
We investigate the interaction between propagating surface plasmons in silver nanowires and excitons generated in quantum dots. We show propagating surface plasmons can excite excitons, which results in quantum dot emission. In this process, the energy is directly transferred from the propagating surface plasmons to the excitons without converting to photons. Furthermore, we demonstrate the reverse process where the decay of excitons generates surface plasmons. PMID:19821597
Whispering-gallery mode microcavity quantum-dot lasers
Kryzhanovskaya, N V; Maximov, M V; Zhukov, A E
2014-03-28
This review examines axisymmetric-cavity quantum-dot microlasers whose emission spectrum is determined by whisperinggallery modes. We describe the possible designs, fabrication processes and basic characteristics of the microlasers and demonstrate the possibility of lasing at temperatures above 100 C. The feasibility of creating multichannel optical sources based on a combination of a broadband quantum-dot laser and silicon microring modulators is discussed. (review)
Los Alamos Quantum Dots for Solar, Display Technology
Klimov, Victor
2015-04-13
Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.
Confinement-induced resonances in low-dimensional quantum systems.
Haller, Elmar; Mark, Manfred J; Hart, Russell; Danzl, Johann G; Reichsllner, Lukas; Melezhik, Vladimir; Schmelcher, Peter; Ngerl, Hanns-Christoph
2010-04-16
We report on the observation of confinement-induced resonances in strongly interacting quantum-gas systems with tunable interactions for one- and two-dimensional geometry. Atom-atom scattering is substantially modified when the s-wave scattering length approaches the length scale associated with the tight transversal confinement, leading to characteristic loss and heating signatures. Upon introducing an anisotropy for the transversal confinement we observe a splitting of the confinement-induced resonance. With increasing anisotropy additional resonances appear. In the limit of a two-dimensional system we find that one resonance persists. PMID:20481986
Electron temperature in electrically isolated Si double quantum dots
NASA Astrophysics Data System (ADS)
Rossi, A.; Ferrus, T.; Williams, D. A.
2012-03-01
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.
Exciton Relaxation and Electron Transfer Dynamics of Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Liu, Cunming
Quantum dots (QDs), also referred to as colloidal semiconductor nanocrystals, exhibit unique electronic and optical properties arising from their three-dimensional confinement and strongly enhanced coulomb interactions. Developing a detailed understanding of the exciton relaxation dynamics within QDs is important not only for sake of exploring the fundamental physics of quantum confinement processes, but also for their applications. Ultrafast transient absorption (TA) spectroscopy, as a powerful tool to explore the relaxation dynamics of excitons, was employed to characterize the hot single/multiexciton relaxation dynamics at the first four exciton states of CdSe/CdZnS QDs. We observed for the first time that the hot hole can relax through two possible pathways: Intraband multiple phonon coupling and intrinsic defect trapping, with a lifetime of 7 ps. Additionally, an ultra-short component of 8 ps, directly associated with the Auger recombination of highly energetic exciton states, was discovered. After exploring the exciton relaxation inside QDs, ultrafast TA spectroscopy was further applied to study the electron transferring outside from QDs. By using a brand-new photocatalytic system consisting of CdSe QDs and Ni-dihydrolipoic acid (Ni-DHLA) catalyst, which has represented a robust photocatalysis of H2 from water, the photoinduced electron transfer (ET) dynamics between QD and the catalyst, one of most important steps during H2 generation, was studied. We found smaller bare CdSe QDs exhibit a better ET performance and CdS shelling on the bare QDs leads to worsen the ET. The calculations of effective mass approximation (EMA) and Marcus theory show the ET process is mainly dominated by driving force, electronic coupling strength and reorganization energy between QD and the catalyst.
Controlled Photon Switch Assisted by Coupled Quantum Dots
Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun
2015-01-01
Quantum switch is a primitive element in quantum network communication. In contrast to previous switch schemes on one degree of freedom (DOF) of quantum systems, we consider controlled switches of photon system with two DOFs. These controlled photon switches are constructed by exploring the optical selection rules derived from the quantum-dot spins in one-sided optical microcavities. Several double controlled-NOT gate on different joint systems are greatly simplified with an auxiliary DOF of the controlling photon. The photon switches show that two DOFs of photons can be independently transmitted in quantum networks. This result reduces the quantum resources for quantum network communication. PMID:26095049
Excited state reactions at the quantum dot surface
NASA Astrophysics Data System (ADS)
Hines, Douglas A.
Semiconductor quantum dots have potential to be an alternative to the high cost and process-intensive materials that are currently used in photovoltaic devices. Colloidal quantum dots are simple to process via solution-based chemistry and have highly tunable absorption properties that make them ideal for use in photovoltaic devices. However, due to their small size and large surface area to volume ratio, quantum dots are highly sensitive to their chemical environment. Thus it is necessary to understand the reactive nature of the quantum dot surface and determine both ways to circumvent this sensitivity as well as ways to use it to our advantage. More specifically, it is important to demonstrate ways in which surface-adsorbed species influence the excited state behavior of these QDs. This document first describes the sensitivity of the quantum dot surface to adsorbed oxygen. In a long-term storage study, it was demonstrated that the most oxidative environment was under the exposure of light in the presence of atmospheric oxygen. This was shown to oxidize the nanoparticle surface, a process which was heavily dependent on the relative coverage of the quantum dot surface by organic surfactant molecules. (Abstract shortened by UMI.).
Long-Term Retention of Fluorescent Quantum Dots In Vivo
NASA Astrophysics Data System (ADS)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan; Eructiez, Marcel P.; Lagerholm, B. Christoffer; Waggoner, Alan S.
Quantum dots that emit in the near-infrared can be used in vivo to follow circulation, to target the reticuloendothelial system, and to map lymphatic drainage from normal tissues and tumors. We have explored the role of surface charge and passivation by polyethylene glycol in determining circulating lifetimes and sites of deposition. Use of long polyethylene glycol polymers increases circulating lifetime. Changing surface charge can partially direct quantum dots to the liver and spleen, or the lymph nodes. Quantum dots are cleared in the order liver > spleen > bone marrow > lymph nodes. Quantum dots retained by lymph nodes maintained fluorescence for two years, suggesting either that the coating is extremely stable or that some endosomes preserve quantum dot function. We also explored migration from tumors to sentinel lymph nodes using tumor models in mice; surface charge and size make little difference to transport from tumors. Antibody and Fab-conjugates of polymer-coated quantum dots failed to target tumors in vivo, probably because of size.