Comparison of quantum confinement effects between quantum wires and dots
Li, Jingbo; Wang, Lin-Wang
2004-03-30
Dimensionality is an important factor to govern the electronic structures of semiconductor nanocrystals. The quantum confinement energies in one-dimensional quantum wires and zero-dimensional quantum dots are quite different. Using large-scale first-principles calculations, we systematically study the electronic structures of semiconductor (including group IV, III-V, and II-VI) surface-passivated quantum wires and dots. The band-gap energies of quantum wires and dots have the same scaling with diameter for a given material. The ratio of band-gap-increases between quantum wires and dots is material-dependent, and slightly deviates from 0.586 predicted by effective-mass approximation. Highly linear polarization of photoluminescence in quantum wires is found. The degree of polarization decreases with the increasing temperature and size.
Correlation studies in weakly confining quantum dot potentials
NASA Astrophysics Data System (ADS)
Kimani, Peter; Jones, Preston; Winkler, Peter
We investigate the electron correlation in few-electron closed-shell atomic systems and similarly in few-electron quantum dots under weak confinement. As usual we start with restricted Hartree-Fock (HF) calculations and add electron correlation in steps in a series of approximations based on the single particle Green's function approach: (i) second-order Green function (GF); (ii) 2ph-Tamm-Dancoff approximation (TDA); and (iii) an extended version thereof which introduces ground-state correlation into the TDA. Our studies exhibit similarities and differences between weakly confined quantum dots and standard atomic systems. The calculations support the application of HF, GF, and TDA techniques in the modeling of three-dimensional quantum dot systems. The observed differences emphasize the significance of confinement and electronic features unique to quantum dots, such as the increased binding of electrons with higher angular momentum and thus - compared to atomic systems - modified shell-filling sequences.
Enhanced confinement in compositionally heterogeneous alloy quantum dots
NASA Astrophysics Data System (ADS)
Hossain, Zubaer
While there is a growing need to increase solar cell efficiencies and reduce the cost per watt, reported efficiencies are still well below the thermodynamic limit of photovoltaic energy conversion. The major factor that affects the efficiency (by more than 40%) is the lack of absorption or thermalization of electrons. To improve absorption, existing approaches, till date, are focused on combining multiple materials in the form of heterostructures. This talk will show the application of a physics-based mechanistic approach to engineer absorption by using alloy quantum dots and exploiting its heterogeneous compositional and deformation fields. Using a multiscale computational framework that combines density functional theory, k.p method and the finite element calculations, the work shows that heterogeneous distribution of composition and strain fields can lead to substantial confinement in alloy quantum dots. Subsequently alloy quantum dots that are much larger (on the order of 50 nm) in size - compared to their single crystalline counterparts (which are on the order of 5 nm) - can still provide significant confinement. The findings uncover new fundamental insights for engineering confinement that are unattainable under conventional homogenization approximations.
Confinement of Dirac electrons in graphene quantum dots
NASA Astrophysics Data System (ADS)
Jolie, Wouter; Craes, Fabian; Petrović, Marin; Atodiresei, Nicolae; Caciuc, Vasile; Blügel, Stefan; Kralj, Marko; Michely, Thomas; Busse, Carsten
2014-04-01
We observe spatial confinement of Dirac states on epitaxial graphene quantum dots with low-temperature scanning tunneling microscopy after using oxygen as an intercalant to suppress the surface state of Ir(111) and to effectively decouple graphene from its metal substrate. We analyze the confined electronic states with a relativistic particle-in-a-box model and find a linear dispersion relation. The oxygen-intercalated graphene is p doped [ED=0.64±0.07 eV] and has a Fermi velocity close to the one of free-standing graphene [vF=0.96±0.07×106 m/s].
Si quantum dots in silicon nitride: Quantum confinement and defects
Goncharova, L. V. Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.; Nguyen, P. H.
2015-12-14
Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.
Si quantum dots in silicon nitride: Quantum confinement and defects
NASA Astrophysics Data System (ADS)
Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.
2015-12-01
Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.
Impurity binding energies in quantum dots with parabolic confinement
NASA Astrophysics Data System (ADS)
Abramov, Arnold
2015-03-01
We present an effective numerical procedure to calculate the binding energies and wave functions of the hydrogen-like impurity states in a quantum dot (QD) with parabolic confinement. The unknown wave function was expressed as an expansion over one-dimensional harmonic oscillator states, which describes the electron's movement along the defined z-axis. Green's function technique used to obtain the solution of Schredinger equation for electronic states in a transverse plane. Binding energy of impurity states is defined as poles of the wave function. The dependences of the binding energy on the position of an impurity, the size of the QD and the magnetic field strength are presented and discussed.
Diamagnetic susceptibility of a confined donor in inhomogeneous quantum dots
NASA Astrophysics Data System (ADS)
Rahmani, K.; Zorkani, I.; Jorio, A.
2011-03-01
The binding energy and diamagnetic susceptibility χdia are estimated for a shallow donor confined to move in GaAs-GaAlAs inhomogeneous quantum dots. The calculation was performed within the effective mass approximation and using the variational method. The results show that the binding energy and the diamagnetic susceptibility χdia depend strongly on the core radius and the shell radius. We have demonstrated that there is a critical value of the ratio of the inner radius to the outer radius which may be important for nanofabrication techniques. The binding energy Eb shows a minimum for a critical value of this ratio depending on the value of the outer radius and shows a maximum when the donor is placed at the center of the spherical layer. The diamagnetic susceptibility is more sensitive to variations of the radius for a large spherical layer. The binding energy and diamagnetic susceptibility depend strongly on the donor position.
Jose, Meera Sakthivel, T. Chandran, Hrisheekesh T. Nivea, R. Gunasekaran, V.
2014-10-15
In this work, undoped and Ag-doped ZnS quantum dots were synthesized using various chemical methods. The products were characterized using X-ray diffraction (XRD), UV-visible spectroscopy and Photoluminescence spectroscopy. Our results revealed that the size of the as-prepared samples range from 1–6 nm in diameter and have a cubic zinc-blende structure. Also, we observed the emission of different wavelength of light from different sized quantum dots of the same material due to quantum confinement effect. The results will be presented in detail and ZnS can be a potential candidate for optical device development and applications.
Shin, Dong Hee; Kim, Sung; Kim, Jong Min; Jang, Chan Wook; Kim, Ju Hwan; Lee, Kyeong Won; Kim, Jungkil; Oh, Si Duck; Lee, Dae Hun; Kang, Soo Seok; Kim, Chang Oh; Choi, Suk-Ho; Kim, Kyung Joong
2015-04-24
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism. PMID:25776865
The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.
Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide
2015-12-22
Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs. PMID:26523743
Quantum confinement effects across two-dimensional planes in MoS{sub 2} quantum dots
Gan, Z. X.; Liu, L. Z.; Wu, H. Y.; Hao, Y. L.; Shan, Y.; Wu, X. L. E-mail: paul.chu@cityu.edu.hk; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk
2015-06-08
The low quantum yield (∼10{sup −5}) has restricted practical use of photoluminescence (PL) from MoS{sub 2} composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity. In this work, PL from 2 to 9 nm MoS{sub 2} quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution. PL from MoS{sub 2} QDs is also found to be sensitive to aggregation due to the size effect.
Kushwaha, Manvir S.
2014-12-15
Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level
NASA Astrophysics Data System (ADS)
Kushwaha, Manvir S.
2014-12-01
Semiconducting quantum dots - more fancifully dubbed artificial atoms - are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement - or the lack of any degree of freedom for the electrons (and/or holes) - in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines' random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level transitions are seen
Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots
Lee, Jonathan R. I.; Meulenberg, Robert W.; Klepeis, John E.; Terminello, Louis J.; Buuren, Tony van; Hanif, Khalid M.; Mattoussi, Hedi
2007-04-06
X-ray absorption spectroscopy has been used to characterize the evolution in the conduction band (CB) density of states of CdSe quantum dots (QDs) as a function of particle size. We have unambiguously witnessed the CdSe QD CB minimum (CBM) shift to higher energy with decreasing particle size, consistent with quantum confinement effects, and have directly compared our results with recent theoretical calculations. At the smallest particle size, evidence for a pinning of the CBM is presented. Our observations can be explained by considering a size-dependent change in the angular-momentum-resolved states at the CBM.
Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots
Lee, J I; Meulenberg, R W; Hanif, K M; Mattoussi, H; Klepeis, J E; Terminello, L J; van Buuren, T
2006-12-15
Recent theoretical descriptions as to the magnitude of effect that quantum confinement has on he conduction band (CB) of CdSe quantum dots (QD) have been conflicting. In this manuscript, we experimentally identify quantum confinement effects in the CB of CdSe QDs for the first time. Using X-ray absorption spectroscopy, we have unambiguously witnessed the CB minimum shift to higher energy with decreasing particle size and have been able to compare these results to recent theories. Our experiments have been able to identify which theories correctly describe the CB states in CdSe QDs. In particular, our experiments suggest that multiple theories describe the shifts in the CB of CdSe QDs and are not mutually exclusive.
Engineering the hole confinement for CdTe-based quantum dot molecules
NASA Astrophysics Data System (ADS)
Kłopotowski, Ł.; Wojnar, P.; Kret, S.; Parlińska-Wojtan, M.; Fronc, K.; Wojtowicz, T.; Karczewski, G.
2015-06-01
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Engineering the hole confinement for CdTe-based quantum dot molecules
Kłopotowski, Ł. Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G.
2015-06-14
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Herzog, F; Heedt, S; Goerke, S; Ibrahim, A; Rupprecht, B; Heyn, Ch; Hardtdegen, H; Schäpers, Th; Wilde, M A; Grundler, D
2016-02-01
We report on the magnetization of ensembles of etched quantum dots with a lateral diameter of 460 nm, which we prepared from InGaAs/InP heterostructures. The quantum dots exhibit 1/B-periodic de-Haas-van-Alphen-type oscillations in the magnetization M(B) for external magnetic fields B > 2 T, measured by torque magnetometry at 0.3 K. We compare the experimental data to model calculations assuming different confinement potentials and including ensemble broadening effects. The comparison shows that a hard wall potential with an edge depletion width of 100 nm explains the magnetic behavior. Beating patterns induced by Rashba spin-orbit interaction (SOI) as measured in unpatterned and nanopatterned InGaAs/InP heterostructures are not observed for the quantum dots. From our model we predict that signatures of SOI in the magnetization could be observed in larger dots in tilted magnetic fields. PMID:26740509
Huang, Pu; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Zhong, Hong-Xia; Ding, Yi-Min; Cao, Xiong; Wu, Meng; Lu, Jing
2016-08-01
The physical origin of the observed anomalous photoluminescence (PL) behavior, that is, the large-size graphene quantum dots (GQDs) exhibiting higher PL energy than the small ones and the broadening PL spectra from deep ultraviolet to near-infrared, has been debated for many years. Obviously, it is in conflict with the well-accepted quantum confinement. Here we shed new light on these two notable debates by state-of-the-art first-principles calculations based on many-body perturbation theory. We find that quantum confinement is significant in GQDs with remarkable size-dependent exciton absorption/emission. The edge environment from alkaline to acidic conditions causes a blue shift of the PL peak. Furthermore, carbon vacancies are inclined to assemble at the GQD edge and form the tiny edge microstructures. The bound excitons, localized inside these edge microstructures, determine the anomalous PL behavior (blue and UV emission) of large-size GQDs. The bound excitons confined in the whole GQD lead to the low-energy transition. PMID:27409980
Electronic structure and electron correlation in weakly confining spherical quantum dot potentials
NASA Astrophysics Data System (ADS)
Kimani, Peter Borgia Ndungu
The electronic structure and electron correlations in weakly confining spherical quantum dots potentials are investigated. Following a common practice, the investigation starts with the restricted Hartree-Fock (HF) approximation. Then electron correlation is added in steps in a series of approximations based on the single particle Green's function approach: (i) Second-order Green function (GF) (ii) 2ph-Tamm-Dancoff approximation (TDA) and (iii) an extended version thereof (XTDA) which introduces ground-state correlation into the TDA. The study includes as well Hartree-Fock V (N-1) potential approximation in which framework the Hartree-Fock virtual orbitals are calculated in the field of the N-1 electrons as opposed to the regular but unphysical N-electron field Hartree-Fock calculation of virtual orbitals. For contrast and comparison, the same approximation techniques are applied to few-electron closed-shell atoms and few-electron negative ions for which pertinent data is readily available. The results for the weakly confining spherical quantum dot potentials and the standard atomic systems exhibit fundamental similarities as well as significant differences. For the most part the results of these calculations are in favor of application of HF, GF, and TDA techniques in the modeling of three-dimensional weakly confining quantum dot potentials. The observed differences emphasize the significance of confinement and electronic features unique to quantum dots such as the increased binding of electrons with higher angular momentum and the modified shell filling sequences.
XANES: observation of quantum confinement in the conduction band of colloidal PbS quantum dots
NASA Astrophysics Data System (ADS)
Demchenko, I. N.; Chernyshova, M.; He, X.; Minikayev, R.; Syryanyy, Y.; Derkachova, A.; Derkachov, G.; Stolte, W. C.; Piskorska-Hommel, E.; Reszka, A.; Liang, H.
2013-04-01
The presented investigations aimed at development of inexpensive method for synthesized materials suitable for utilization of solar energy. This important issue was addressed by focusing, mainly, on electronic local structure studies with supporting x-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis of colloidal galena nano-particles (NPs) and quantum dots (QDs) synthesized using wet chemistry under microwave irradiation. Performed x-ray absorption near edge structure (XANES) analysis revealed an evidence of quantum confinement for the sample with QDs, where the bottom of the conduction band was shifted to higher energy. The QDs were found to be passivated with oxides at the surface. Existence of sulfate/sulfite and thiosulfate species in pure PbS and QDs, respectively, was identified.
Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J
2013-04-19
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network. PMID:23679636
Yeh, Te-Fu; Huang, Wei-Lun; Chung, Chung-Jen; Chiang, I-Ting; Chen, Liang-Che; Chang, Hsin-Yu; Su, Wu-Chou; Cheng, Ching; Chen, Shean-Jen; Teng, Hsisheng
2016-06-01
Investigating quantum confinement in graphene under ambient conditions remains a challenge. In this study, we present graphene oxide quantum dots (GOQDs) that show excitation-wavelength-independent photoluminescence. The luminescence color varies from orange-red to blue as the GOQD size is reduced from 8 to 1 nm. The photoluminescence of each GOQD specimen is associated with electron transitions from the antibonding π (π*) to oxygen nonbonding (n-state) orbitals. The observed quantum confinement is ascribed to a size change in the sp(2) domains, which leads to a change in the π*-π gap; the n-state levels remain unaffected by the size change. The electronic properties and mechanisms involved in quantum-confined photoluminescence can serve as the foundation for the application of oxygenated graphene in electronics, photonics, and biology. PMID:27192445
NASA Astrophysics Data System (ADS)
Mathew, Reuble; Shi Yang, Hong Yi; Hall, Kimberley
2015-03-01
Optimal quantum control (OQC), which iteratively optimizes the control Hamiltonian to achieve a target quantum state, is a versatile approach for manipulating quantum systems. For optically-active transitions, OQC can be implemented using femtosecond pulse shaping which provides control over the amplitude and/or phase of the electric field. Optical pulse shaping has been employed to optimize physical processes such as nonlinear optical signals, photosynthesis, and has recently been applied to optimizing single-qubit gates in multiple semiconductor quantum dots. In this work, we examine the use of numerical pulse shape optimization for optimal quantum control of multiple qubits confined to quantum dots as a function of their electronic structure parameters. The numerically optimized pulse shapes were found to produce high fidelity quantum gates for a range of transition frequencies, dipole moments, and arbitrary initial and final states. This work enhances the potential for scalability by reducing the laser resources required to control multiple qubits.
Excitons in artificial quantum dots in the weak spatial confinement regime
Zaitsev, S. V. Welsch, M. K.; Forchel, A.; Bacher, G.
2007-12-15
The exciton states in individual quantum dots prepared by the selective interdiffusion method in CdTe/CdMgTe quantum wells are studied by the methods of steady-state optical spectroscopy. The annealing-induced diffusion of Mg atoms inward to the bulk of the quantum well, which is significantly enhanced under the SiO{sub 2} mask, leads to a modulation of the bandgap width in the plane of the well, with the minima of the potential being located in the mask aperture areas. A lateral potential that arises, whose height is in the range 30-270 meV and characteristic scale is about 100 nm, efficiently localizes carriers, which form quasi-zero-dimensional excitons in the weak spatial confinement regime. Detailed magnetooptical studies show that Coulomb correlations play a significant role in the formation of exciton states under such a regime, which, in particular, manifests itself in the localization of the wavefunction of carriers on scales that are considerably smaller than the scale of the lateral potential. The particular features of the interlevel splitting, of the biexciton binding energy, and of the diamagnetic shift are discussed. A strong dependence of the interlevel relaxation on the interlevel splitting (the phonon neck) indicates that alternative relaxation mechanisms in the quantum dots studied are weak. The excited states are populated according to the Pauli principle, which indicates that it is possible to apply the shell model of many-exciton states to quantum dots under the weak spatial confinement conditions.
Role of confinements on the melting of Wigner molecules in quantum dots
NASA Astrophysics Data System (ADS)
Bhattacharya, Dyuti; Filinov, Alexei V.; Ghosal, Amit; Bonitz, Michael
2016-03-01
We explore the stability of a Wigner molecule (WM) formed in confinements with different geometries emulating the role of disorder and analyze the melting (or crossover) of such a system. Building on a recent calculation [D. Bhattacharya, A. Ghosal, Eur. Phys. J. B 86, 499 (2013)] that discussed the effects of irregularities on the thermal crossover in classical systems, we expand our studies in the untested territory by including both the effects of quantum fluctuations and of disorder. Our results, using classical and quantum (path integral) Monte Carlo techniques, unfold complementary mechanisms that drive the quantum and thermal crossovers in a WM and show that the symmetry of the confinement plays no significant role in determining the quantum crossover scale n X . This is because the zero-point motion screens the boundary effects within short distances. The phase diagram as a function of thermal and quantum fluctuations determined from independent criteria is unique, and shows "melting" from the WM to both the classical and quantum "liquids". An intriguing signature of weakening liquidity with increasing temperature, T, is found in the extreme quantum regime. The crossover is associated with production of defects. However, these defects appear to play distinct roles in driving the quantum and thermal "melting". Our analyses carry serious implications for a variety of experiments on many-particle systems - semiconductor heterostructure quantum dots, trapped ions, nanoclusters, colloids and complex plasma.
Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators
Flatae, Assegid Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz
2014-01-01
We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 μJ.
Self-Induced Oscillation for Electron-Hole Pair Confined in Quantum Dot
Tagawa, Tomoki; Tsubaki, Atsushi; Ishizuki, Masamu; Takeda, Kyozaburo
2011-12-23
We study the time-dependent (TD) phenomena of the electron-hole or electron-electron pair confined in the square quantum dot (SQD) system by computationally solving TD Schroedinger equation under the unrestricted Hartree-Fock (UHF) approach. A typical vacillation is found both in the electron and hole when the charged pair is strongly confined in the SQD while the charged particles have initially the same orbital symmetry. The FFT analysis elucidates that the transition matrix element due to the coulomb interaction involves the eigen frequency {omega} being equal to the excitation energy when the resonative vacillation appears. Thus, Coulomb potential has a potential to cause the self-induced ''Rabi'' oscillation when the charged-particle pair is confined only in the QD.
Energies and densities of electrons confined in elliptical and ellipsoidal quantum dots.
Halder, Avik; Kresin, Vitaly V
2016-10-01
We consider a droplet of electrons confined within an external harmonic potential well of elliptical or ellipsoidal shape, a geometry commonly encountered in work with semiconductor quantum dots and other nanoscale or mesoscale structures. For droplet sizes exceeding the effective Bohr radius, the dominant contribution to average system parameters in the Thomas-Fermi approximation comes from the potential energy terms, which allows us to derive expressions describing the electron droplet's shape and dimensions, its density, total and capacitive energy, and chemical potential. The analytical results are in very good agreement with experimental data and numerical calculations, and make it possible to follow the dependence of the properties of the system on its parameters (the total number of electrons, the axial ratios and curvatures of the confinement potential, and the dielectric constant of the material). An interesting feature is that the eccentricity of the electron droplet is not the same as that of its confining potential well. PMID:27502044
NASA Astrophysics Data System (ADS)
Zhang, Zhenkui; Dai, Ying; Yu, Lin; Guo, Meng; Huang, Baibiao; Whangbo, Myung-Hwan
2012-02-01
In light of the established differences between the quantum confinement effect and the electron affinities between hydrogen-passivated C and Si quantum dots, we carried out theoretical investigations on SiC quantum dots, with surfaces uniformly terminated by C-H or Si-H bonds, to explore the role of surface terminations on these two aspects. Surprisingly, it was found that the quantum confinement effect is present (or absent) in the highest occupied (or lowest unoccupied) molecular orbital of the SiC quantum dots regardless of their surface terminations. Thus, the quantum confinement effect related to the energy gap observed experimentally (Phys. Rev. Lett., 2005, 94, 026102) is contributed to by the size-dependence of the highest occupied states; the absence of quantum confinement in the lowest unoccupied states is in contrary to the usual belief based on hydrogen-passivated C quantum dots. However, the cause of the absence of the quantum confinement in C nanodots is not transferable to SiC. We propose a model that provides a clear explanation for all findings on the basis of the nearest-neighbor and next-nearest-neighbor interactions between the valence atomic p-orbital in the frontier occupied/unoccupied states. We also found that the electron affinities of the SiC quantum dots, which closely depend on the surface environments, are negative for the C-H termination and positive for the Si-H termination. The prediction of negative electron affinities in SiC quantum dots by simple C-H termination indicates a promising application for these materials in electron-emitter devices. Our model predicts that GeC quantum dots with hydrogen passivation exhibit similar features to SiC quantum dots and our study confirms the crucial role that the surface environment plays in these nanoscale systems.In light of the established differences between the quantum confinement effect and the electron affinities between hydrogen-passivated C and Si quantum dots, we carried out
Spin blockade and exchange in Coulomb-confined silicon double quantum dots.
Weber, Bent; Tan, Y H Matthias; Mahapatra, Suddhasatta; Watson, Thomas F; Ryu, Hoon; Rahman, Rajib; Hollenberg, Lloyd C L; Klimeck, Gerhard; Simmons, Michelle Y
2014-06-01
Electron spins confined to phosphorus donors in silicon are promising candidates as qubits because of their long coherence times, exceeding seconds in isotopically purified bulk silicon. With the recent demonstrations of initialization, readout and coherent manipulation of individual donor electron spins, the next challenge towards the realization of a Si:P donor-based quantum computer is the demonstration of exchange coupling in two tunnel-coupled phosphorus donors. Spin-to-charge conversion via Pauli spin blockade, an essential ingredient for reading out individual spin states, is challenging in donor-based systems due to the inherently large donor charging energies (∼45 meV), requiring large electric fields (>1 MV m(-1)) to transfer both electron spins onto the same donor. Here, in a carefully characterized double donor-dot device, we directly observe spin blockade of the first few electrons and measure the effective exchange interaction between electron spins in coupled Coulomb-confined systems. PMID:24727686
NASA Astrophysics Data System (ADS)
Tartakovskii, Alexander
2012-07-01
Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by
Ligand-Mediated Control of the Confinement Potential in Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Amin, Victor
This thesis describes the mechanisms by which organic surfactants, particularly thiophenols and phenyldithiocarbamates, reduce the confinement potential experienced by the exciton of semiconductor quantum dots (QDs). The reduction of the confinement potential is enabled by the creation of interfacial electronic states near the band edge of the QD upon ligand adsorption. In the case of thiophenols, we find that this ligand adsorbs in two distinct binding modes, (i) a tightly bound mode capable of exciton delocalization, and (ii) a more weakly bound mode that has no discernable effect on exciton confinement. Both the adsorption constant and reduction in confinement potential are tunable by para substitution and are generally anticorrelated. For tightly bound thiophenols and other moderately delocalizing ligands, the degree of delocalization induced in the QD is approximately linearly proportional to the fractional surface area occupied by the ligand for all sizes of QDs. In the case of phenyldithiocarbamates, the reduction in the confinement potential is much greater, and ligand adjacency must be accounted for to model exciton delocalization. We find that at high surface coverages, exciton delocalization by phenyldithiocarbamates and other highly delocalizing ligands is dominated by ligand packing effects. Finally, we construct a database of electronic structure calculations on organic molecules and propose an algorithm that combines experimental and computational screening to find novel delocalizing ligands.
Anas, M. M.; Othman, A. P.; Gopir, G.
2014-09-03
Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ∼ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (T{sub d}) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (V{sub xc}) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional.
NASA Astrophysics Data System (ADS)
Okunishi, Takuma; Clark, Richard; Takeda, Kyozaburo; Kusakabe, Koichi; Tomita, Norikazu
2013-02-01
We extend the static multireference description (resonant unrestricted Hartree-Fock) to a dynamical system in order to include the correlation effect dynamically. The resulting time-dependent (TD) Schrödinger equation is simplified into the time-developed rate equation (TD-CI), where the TD external field \\hatH‧(t) is taken into account directly in the Hamiltonian without any approximations. This TD-CI approach also has an advantage in that it takes into account the electron correlation by narrowing down the number of employed Slater determinants. We apply our TD-CI approach to the case of two electrons confined in the square quantum dot (QD) having the spin singlet multiplicity, and study theoretically the spatial and temporal fluctuation of the two-electron ground state under photon injection and pulse field application.
Decoupling the effects of confinement and passivation on semiconductor quantum dots.
Rudd, Roya; Hall, Colin; Murphy, Peter J; Reece, Peter J; Charrault, Eric; Evans, Drew
2016-07-20
Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfluorinated polyether oil. Very high band gaps are observed for fluorinated QDs with increasing levels of quantum confinement (from 4.2 to 4.6 eV for Si, and 2.5 to 3 eV for Ge), with a shift down to 3.4 eV for Si when oxygen is introduced to the passivation layer. In contrast, the fluorinated Si QDs display a constant UV photoluminescence (3.8 eV) irrespective of size. This ability to tune the size and passivation independently opens a new opportunity to extending the use of simple semiconductor QDs. PMID:27385513
Wang, Shujun; Cole, Ivan S; Li, Qin
2016-07-28
We for the first time report a quantum-confined bandgap narrowing mechanism through which the absorption of two UV absorbers, namely the graphene quantum dots (GQDs) and TiO2 nanoparticles, can be easily extended into the visible light range in a controllable manner. Such a mechanism may be of great importance for light harvesting, photocatalysis and optoelectronics. PMID:27297746
Cosentino, S; Mio, A M; Barbagiovanni, E G; Raciti, R; Bahariqushchi, R; Miritello, M; Nicotra, G; Aydinli, A; Spinella, C; Terrasi, A; Mirabella, S
2015-07-14
Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. PMID:26077313
Dispersive measurement of electron spin states in Coulomb-confined silicon double quantum dots
NASA Astrophysics Data System (ADS)
House, Matthew; Kobayashi, Takashi; Weber, Bent; Hile, Sam; Rogge, Sven; Simmons, Michelle
2015-03-01
We use radio frequency reflectometry with a resonant circuit to investigate a double quantum dot device patterned by the placement of phosphorus donors in silicon with scanning tunnelling microscope lithography. The circuit responds to electron tunnelling to and from the quantum dots, the complex admittance of which provides information about the tunnel coupling between the dots and the leads. With four electrons on two dots, the Pauli Exclusion Principle makes tunnelling of one electron between the two dots spin dependent, which we exploit to measure the electronic spin state. We map the ground state transition between singlet and triplet states as a function of electric and magnetic fields, which shows that the exchange energy can be tuned over an order of magnitude (about 10 to 100 μeV) or more in this device. We apply high frequency pulses to induce an excited spin state and observe that the dispersive measurement can detect the excited spin state in addition to the ground state.
Entanglement and Quantum Optics with Quantum Dots
NASA Astrophysics Data System (ADS)
Burgers, A. P.; Schaibley, J. R.; Steel, D. G.
2015-06-01
Quantum dots (QDs) exhibit many characteristics of simpler two-level (or few level) systems, under optical excitation. This makes atomic coherent optical spectroscopy theory and techniques well suited for understanding the behavior of quantum dots. Furthermore, the combination of the solid state nature of quantum dots and their close approximation to atomic systems makes them an attractive platform for quantum information based technologies. In this chapter, we will discuss recent studies using direct detection of light emitted from a quantum dot to investigate coherence properties and confirm entanglement between the emitted photon and an electron spin qubit confined to the QD.
2013-01-01
Confined states of a positronium (Ps) in the spherical and circular quantum dots (QDs) are theoretically investigated in two size quantization regimes: strong and weak. Two-band approximation of Kane’s dispersion law and parabolic dispersion law of charge carriers are considered. It is shown that electron-positron pair instability is a consequence of dimensionality reduction, not of the size quantization. The binding energies for the Ps in circular and spherical QDs are calculated. The Ps formation dependence on the QD radius is studied. PMID:23826867
Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses
Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.
2014-01-13
We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.
Impurity with two electrons in the spherical quantum dot with Unite confinement potential
NASA Astrophysics Data System (ADS)
Baghdasaryan, D. A.; Ghaltaghchyan, H. Ts; Kazaryan, E. M.; Sarkisyan, H. A.
2016-01-01
Two-electron states in a spherical QD with the hydrogenic impurity located in the center and with a finite height confinement potential barrier are investigated. The effective mass mismatch have been taken into account. The dependence of ground state energy and Coulomb electron-electron interaction energy correction on the QD size is studied. The problem of the state exchange time control in QD is discussed, taking into account the spins of the electrons in the Russell-Saunders approximation. The effect of quantum emission has been shown.
Kumar Thiyagarajan, Senthil; Raghupathy, Suresh; Palanivel, Dharmalingam; Raji, Kaviyarasan; Ramamurthy, Perumal
2016-04-28
Synthesizing nano carbon from its bulk precursors is of recent research interest. In this report, luminescent carbon nanoparticles (CNPs) with tunable particle size and surface functionality are fabricated from lignite using ethylenediamine as the reactive solvent and surface passivating agent via different experimental methods. From the steady-state and time-resolved photophysical studies of these differently sized CNPs, it is unveiled that the energy of the excitons generated after photoexcitation is quantum confined, and it influences the observed photophysical behaviour significantly only when the particle size is less than 10 nm. A larger size of the CNPs and less surface functionalization lead to aggregation, and quenching of the fluorescence. But by dispersing smaller size CNPs in sodium sulfate matrix exhibits fluorescence in the solid state with an absolute fluorescence quantum yield of ∼34%. The prospective application of this hybrid material in sensing and removal of moisture in the atmosphere is illustrated. PMID:27067247
NASA Astrophysics Data System (ADS)
Pang, Qian-Jun
2007-01-01
Using unitary transformations, this paper obtains the eigenvalues and the common eigenvector of Hamiltonian and a new-defined generalized angular momentum (Lz) for an electron confined in quantum dots under a uniform magnetic field (UMF) and a static electric field (SEF). It finds that the eigenvalue of Lz just stands for the expectation value of a usual angular momentum lz in the eigen-state. It first obtains the matrix density for this system via directly calculating a transfer matrix element of operator exp(-βH) in some representations with the technique of integral within an ordered products (IWOP) of operators, rather than via solving a Bloch equation. Because the quadratic homogeneity of potential energy is broken due to the existence of SEF, the virial theorem in statistical physics is not satisfactory for this system, which is confirmed through the calculation of thermal averages of physical quantities.
Electrochromic nanocrystal quantum dots.
Wang, C; Shim, M; Guyot-Sionnest, P
2001-03-23
Incorporating nanocrystals into future electronic or optoelectronic devices will require a means of controlling charge-injection processes and an understanding of how the injected charges affect the properties of nanocrystals. We show that the optical properties of colloidal semiconductor nanocrystal quantum dots can be tuned by an electrochemical potential. The injection of electrons into the quantum-confined states of the nanocrystal leads to an electrochromic response, including a strong, size-tunable, midinfrared absorption corresponding to an intraband transition, a bleach of the visible interband exciton transitions, and a quench of the narrow band-edge photoluminescence. PMID:11264530
Zhu, Nan; Zheng, Kaibo; Karki, Khadga J.; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E.; Pullerits, Tõnu; Chi, Qijin
2015-01-01
Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 109 s−1. Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications. PMID:25996307
Transport through graphene quantum dots
NASA Astrophysics Data System (ADS)
Güttinger, J.; Molitor, F.; Stampfer, C.; Schnez, S.; Jacobsen, A.; Dröscher, S.; Ihn, T.; Ensslin, K.
2012-12-01
We review transport experiments on graphene quantum dots and narrow graphene constrictions. In a quantum dot, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. The recently isolated two-dimensional carbon allotrope graphene is an interesting host to study quantum phenomena, due to its novel electronic properties and the expected weak interaction of the electron spin with the material. Graphene quantum dots are fabricated by etching mono-layer flakes into small islands (diameter 60-350 nm) with narrow connections to contacts (width 20-75 nm), serving as tunneling barriers for transport spectroscopy. Electron confinement in graphene quantum dots is observed by measuring Coulomb blockade and transport through excited states, a manifestation of quantum confinement. Measurements in a magnetic field perpendicular to the sample plane allowed to identify the regime with only a few charge carriers in the dot (electron-hole transition), and the crossover to the formation of the graphene specific zero-energy Landau level at high fields. After rotation of the sample into parallel magnetic field orientation, Zeeman spin splitting with a g-factor of g ≈ 2 is measured. The filling sequence of subsequent spin states is similar to what was found in GaAs and related to the non-negligible influence of exchange interactions among the electrons.
NASA Astrophysics Data System (ADS)
Ghamsari, Morteza Sasani; Bidzard, Ashkan Momeni; Han, Wooje; Park, Hyung-Ho
2016-04-01
Carbon quantum dots (C-QDs) with different size distributions and surface characteristics can exhibit good emission properties in the visible and near-infrared (NIR) regions, which can be applicable in optoelectronic devices as well as biomedical applications. Optical properties of colloidal C-QDs in distilled water at different concentrations produced using a method of alkali-assisted surfactant-free oxidation of cellulose acetate is presented. The structural and optical properties of colloidal C-QDs at different concentrations were investigated, with the aim of clarifying the main mechanisms of photoluminescence emissions. We observed a wide range of tunable visible to NIR emissions with good stability from the C-QD colloids at different applied excitation wavelengths. The colloids show dual emissions with maxima at ˜420 and 775 nm (blue and NIR emissions) when excited at the wavelength range near the energy gaps of the C-QDs. Moreover, by increasing the excitation wavelength, tunable visible emissions at the spectral range of 475 to 550 nm are observed. A detailed analysis of the results shows that the blue and NIR luminescence of colloidal C-QDs originate from the oxide-related surface effects whereas quantum confinement is the responsible mechanism for tunable visible emissions of the C-QD colloid.
NASA Astrophysics Data System (ADS)
Nakamura, Yoshiaki; Masada, Akiko; Ichikawa, Masakazu
2007-07-01
The authors observed a quantum-confinement effect in individual Ge1-xSnx quantum dots (QDs) on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy at room temperature. The quantum-confinement effect was featured by an increase in the energy band gap of ˜1.5eV with a decrease in QD diameter from 35to4nm. The peaks for quantum levels of QDs became broader with a decrease in the height-diameter aspect ratio of QDs, demonstrating the gradual emergence of two dimensionality in density of states of quasi zero-dimensional QDs with the QD flattening.
Lateral Quantum Dots for Quantum Information Processing
NASA Astrophysics Data System (ADS)
House, Matthew Gregory
The possibility of building a computer that takes advantage of the most subtle nature of quantum physics has been driving a lot of research in atomic and solid state physics for some time. It is still not clear what physical system or systems can be used for this purpose. One possibility that has been attracting significant attention from researchers is to use the spin state of an electron confined in a semiconductor quantum dot. The electron spin is magnetic in nature, so it naturally is well isolated from electrical fluctuations that can a loss of quantum coherence. It can also be manipulated electrically, by taking advantage of the exchange interaction. In this work we describe several experiments we have done to study the electron spin properties of lateral quantum dots. We have developed lateral quantum dot devices based on the silicon metal-oxide-semiconductor transistor, and studied the physics of electrons confined in these quantum dots. We measured the electron spin excited state lifetime, which was found to be as long as 30 ms at the lowest magnetic fields that we could measure. We fabricated and characterized a silicon double quantum dot. Using this double quantum dot design, we fabricated devices which combined a silicon double quantum dot with a superconducting microwave resonator. The microwave resonator was found to be sensitive to two-dimensional electrons in the transistor channel, which we measured and characterized. We developed a new method for extracting information from random telegraph signals, which are produced when we observe thermal fluctuations of electrons in quantum dots. The new statistical method, based on the hidden Markov model, allows us to detect spin-dependent effects in such fluctuations even though we are not able to directly observe the electron spin. We use this analysis technique on data from two experiments involving gallium arsenide quantum dots and use it to measure spin-dependent tunneling rates. Our results advance the
Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors
Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.
2014-02-14
A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped.
NASA Astrophysics Data System (ADS)
Gustin, C.; Faniel, S.; Hackens, B.; Bayot, V.; de Poortere, E.; Shayegan, M.
2002-03-01
We report on the low temperature magnetoresistance of various quantum billiards, each with a different shape of the 2DEG (two-dimensional electron gas) confinement potential. The structures are patterned by electron beam lithography on three different high mobility GaAs/AlGaAs samples, namely a single heterojunction and two quantum wells with widths of 150 and 450Årespectively. By means of electrostatic gates, both the electron density and the shape of the billiard can be controlled, as well as the finite thickness of the 2DEG in the case of the wide quantum well. We discuss the results of low temperature magnetotransport measurements with the open dots subject to an phin-situ tilted magnetic field. More specifically we investigate the influence of the symmetry-asymmetry of the 2DEG confinement potential on the statistics of the universal conductance fluctuations (UCF).
NASA Astrophysics Data System (ADS)
Mandal, Arkajit; Sarkar, Sucharita; Ghosh, Arghya Pratim; Ghosh, Manas
2015-12-01
We make an extensive investigation of total optical absorption coefficient (TOAC) of impurity doped quantum dots (QDs) in presence and absence of Gaussian white noise. The TOAC profiles have been monitored against incident photon energy with special emphasis on the roles played by the electric field, magnetic field, and the dot confinement potential. Presence of impurity also influences the TOAC profile. In general, presence of noise causes enhancement of TOAC over that of noise-free condition. However, the interplay between the noise and the quantities like electric field, magnetic field, confinement potential and impurity potential bring about rich subtleties in the TOAC profiles. The said subtleties are often manifested by the alterations in TOAC peak intensity, extent of TOAC peak bleaching, and value of saturation intensity. The findings reveal some technologically relevant aspects of TOAC for the doped QD systems, specially in presence of noise.
Braun, T.; Baumann, V.; Iff, O.; Schneider, C.; Kamp, M.; Höfling, S.
2015-01-26
We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tamm-plasmon modes confined beneath gold disks in a hybrid metal/semiconductor structure. The enhancement of the emission intensity is confirmed by spatially resolved micro-photoluminescence area scans and temperature dependent measurements. Single photon emission from our coupled system is verified via second order autocorrelation measurements. We observe bright single quantum dot emission of up to ∼173 000 detected photons per second at a repetition rate of the excitation source of 82 MHz, and calculate an extraction efficiency of our device as high as 7%.
Kosemura, Daisuke Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi; Ohshita, Yoshio
2014-01-15
100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.
Vukmirovic, Nenad; Wang, Lin-Wang
2009-11-10
This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.
NASA Astrophysics Data System (ADS)
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-10-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
NASA Technical Reports Server (NTRS)
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-01-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
NASA Astrophysics Data System (ADS)
Vardanyan, K. A.; Vartanian, A. L.; Stepanyan, A. G.; Kirakosyan, A. A.
2015-10-01
The spin-relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. It has been shown that in comparison with flexural phonons, the electron coupling with the dilatational phonons causes 3 orders faster spin relaxation. We have found that the relaxation rate of the spin-flip is an order of magnitude smaller than that of the spin- conserving.
Electron Spin Dynamics in Semiconductor Quantum Dots
Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.
2011-07-15
An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.
Designing quantum dots for solotronics
Kobak, J.; Smoleński, T.; Goryca, M.; Papaj, M.; Gietka, K.; Bogucki, A.; Koperski, M.; Rousset, J.-G.; Suffczyński, J.; Janik, E.; Nawrocki, M.; Golnik, A.; Kossacki, P.; Pacuski, W.
2014-01-01
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory. PMID:24463946
Quantum Dots: An Experiment for Physical or Materials Chemistry
ERIC Educational Resources Information Center
Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.
2005-01-01
An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.
NASA Astrophysics Data System (ADS)
Kumar, D. Sanjeev; Boda, Aalu; Mukhopadhyay, Soma; Chatterjee, Ashok
2015-12-01
The ground state energy of a neutral hydrogenic donor impurity (D0) trapped in a three-dimensional GaAs quantum dot with Gaussian confinement is calculated in the presence of Rashba spin-orbit interaction. The effect of the spin-orbit interaction is incorporated by performing a unitary transformation and retaining terms up to quadratic in the spin-orbit interaction coefficient. For the resulting Hamiltonian, the Rayleigh-Ritz variational method is employed with a simple wave function within the framework of effective-mass envelope function theory to determine the ground state energy and the binding energy of the donor complex. The results show that the Rashba spin-orbit interaction reduces the total GS energy of the donor impurity.
Das Arulsamy, A.; Rider, A. E.; Cheng, Q. J.; Ostrikov, K.; Xu, S.
2009-05-01
A high level of control over quantum dot (QD) properties such as size and composition during fabrication is required to precisely tune the eventual electronic properties of the QD. Nanoscale synthesis efforts and theoretical studies of electronic properties are traditionally treated quite separately. In this paper, a combinatorial approach has been taken to relate the process synthesis parameters and the electron confinement properties of the QDs. First, hybrid numerical calculations with different influx parameters for Si{sub 1-x}C{sub x} QDs were carried out to simulate the changes in carbon content x and size. Second, the ionization energy theory was applied to understand the electronic properties of Si{sub 1-x}C{sub x} QDs. Third, stoichiometric (x=0.5) silicon carbide QDs were grown by means of inductively coupled plasma-assisted rf magnetron sputtering. Finally, the effect of QD size and elemental composition were then incorporated in the ionization energy theory to explain the evolution of the Si{sub 1-x}C{sub x} photoluminescence spectra. These results are important for the development of deterministic synthesis approaches of self-assembled nanoscale quantum confinement structures.
Quantum dot device tunable from single to triple dot system
Rogge, M. C.; Haug, R. J.; Pierz, K.
2013-12-04
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
Pejova, Biljana
2014-05-01
Raman scattering in combination with optical spectroscopy and structural studies by X-ray diffraction was employed to investigate the phonon confinement and strain-induced effects in 3D assemblies of variable-size zincblende ZnSe quantum dots close packed in thin film form. Nanostructured thin films were synthesized by colloidal chemical approach, while tuning of the nanocrystal size was enabled by post-deposition thermal annealing treatment. In-depth insights into the factors governing the observed trends of the position and half-width of the 1LO band as a function of the average QD size were gained. The overall shifts in the position of 1LO band were found to result from an intricate compromise between the influence of phonon confinement and lattice strain-induced effects. Both contributions were quantitatively and exactly modeled. Accurate assignments of the bands due to surface optical (SO) modes as well as of the theoretically forbidden transverse optical (TO) modes were provided, on the basis of reliable physical models (such as the dielectric continuum model of Ruppin and Englman). The size-dependence of the ratio of intensities of the TO and LO modes was studied and discussed as well. Relaxation time characterizing the phonon decay processes in as-deposited samples was found to be approximately 0.38 ps, while upon post-deposition annealing already at 200 °C it increases to about 0.50 ps. Both of these values are, however, significantly smaller than those characteristic for a macrocrystalline ZnSe sample. - Graphical abstract: Optical phonons in nanostructured thin films composed by zincblende zinc selenide quantum dots in strong size-quantization regime: competition between phonon confinement and strain-related effects. - Highlights: • Phonon confinement vs. strain-induced effects in ZnSe 3D QD assemblies were studied. • Shifts of the 1LO band result from an intricate compromise between the two effects. • SO and theoretically forbidden TO modes were
Bound states in continuum: Quantum dots in a quantum well
NASA Astrophysics Data System (ADS)
Prodanović, Nikola; Milanović, Vitomir; Ikonić, Zoran; Indjin, Dragan; Harrison, Paul
2013-11-01
We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.
2016-01-01
Conspectus Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole–dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single
Colloidal Double Quantum Dots.
Teitelboim, Ayelet; Meir, Noga; Kazes, Miri; Oron, Dan
2016-05-17
Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole-dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single photon
NASA Astrophysics Data System (ADS)
Taylor, Robert A.
2010-09-01
These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur
The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states
Wu, Jiang; Passmore, Brandon; Manasreh, M. O.
2015-08-28
InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband and interband optical transitions. The electron filling of self-assembled InAs quantum dots was varied by direct doping of quantum dots with different concentrations. Photoresponse in the near infrared and middle wavelength infrared spectral region was observed from samples with low quantum dot filling. Although undoped quantum dots were favored for interband transitions with the absence of a second optical excitation in the near infrared region, doped quantum dots were preferred to improve intraband transitions in the middle wavelength infrared region. As a result, partial filling of quantum dot was required, to the extent of maintaining a low dark current, to enhance the dual-band photoresponse through the confined electron states.
Gallium arsenide-based long-wavelength quantum dot lasers
NASA Astrophysics Data System (ADS)
Park, Gyoungwon
2001-09-01
GaAs-based long-wavelength quantum dot lasers have long been studied for applications to optical interconnects. The zero-dimensional confinement potential of quantum dots opens possibility of novel devices. Also, the quantum dot itself shows very interesting characteristics. This dissertation describes the development of GaAs-based 1.3 μm quantum dot lasers and the research on the unique characteristics of quantum dot ensemble. InGaAs quantum dots grown using molecular beam epitaxy in submonolayer deposition have extended wavelength around 1.3 μm and well resolved energy levels that can be described by three-dimensional harmonic oscillator model assuming parabolic confining potential. Lasing transitions from various InGaAs quantum dot energy levels are obtained from edge-emitting lasers. With optimized quantum dot active region and device structure, continuous-wave, room-temperature lasing operation around 1.3 μm is achieved with very low threshold current. Lateral confinement of carriers and photons in the cavity with AlxO y using wet-oxidation technique results in low waveguide loss, which lowers the threshold further. InGaAs quantum dot lasers have almost temperature- insensitive lasing threshold below ~200 K with very low threshold current density close to transparency current density. The rapid increase of threshold current along with temperature above ~200 K is due to thermal excitation of carriers into the higher energy levels and increase of non-radiative recombination. Quasi- equilibrium model for carrier dynamics shows that the optical gain of quantum dot ensemble is strongly temperature dependent, and that the separation between quantum dot energy levels plays an important role in the temperature dependence of the device characteristics. Several predictions of the model are compared with the experimental results. Lasing operation with less temperature-sensitivity is achieved from InAs quantum dot lasers with increased level separation.
Silicon quantum dots: fine-tuning to maturity
NASA Astrophysics Data System (ADS)
Morello, Andrea
2015-12-01
Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.
NASA Astrophysics Data System (ADS)
Vaseghi, B.; Hashemi, H.
2016-06-01
In this paper simultaneous effects of external electric and magnetic fields and quantum confinement on the radiation properties of spherical quantum dot embedded in a photonic crystal are investigated. Under the influence of photonic band-gap, effects of external static fields and dot dimension on the amplitude and spectrum of different radiation fields emitted by the quantum dot are studied. Our results show the considerable effects of external fields and quantum confinement on the spontaneous emission of the system.
Quantum dots: Rethinking the electronics
NASA Astrophysics Data System (ADS)
Bishnoi, Dimple
2016-05-01
In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including "waste heat" from the sun's energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.
El-Ballouli, Ala'a O; Alarousu, Erkki; Bernardi, Marco; Aly, Shawkat M; Lagrow, Alec P; Bakr, Osman M; Mohammed, Omar F
2014-05-14
Quantum dot (QD) solar cells have emerged as promising low-cost alternatives to existing photovoltaic technologies. Here, we investigate charge transfer and separation at PbS QDs and phenyl-C61-butyric acid methyl ester (PCBM) interfaces using a combination of femtosecond broadband transient absorption (TA) spectroscopy and steady-state photoluminescence quenching measurements. We analyzed ultrafast electron injection and charge separation at PbS QD/PCBM interfaces for four different QD sizes and as a function of PCBM concentration. The results reveal that the energy band alignment, tuned by the quantum size effect, is the key element for efficient electron injection and charge separation processes. More specifically, the steady-state and time-resolved data demonstrate that only small-sized PbS QDs with a bandgap larger than 1 eV can transfer electrons to PCBM upon light absorption. We show that these trends result from the formation of a type-II interface band alignment, as a consequence of the size distribution of the QDs. Transient absorption data indicate that electron injection from photoexcited PbS QDs to PCBM occurs within our temporal resolution of 120 fs for QDs with bandgaps that achieve type-II alignment, while virtually all signals observed in smaller bandgap QD samples result from large bandgap outliers in the size distribution. Taken together, our results clearly demonstrate that charge transfer rates at QD interfaces can be tuned by several orders of magnitude by engineering the QD size distribution. The work presented here will advance both the design and the understanding of QD interfaces for solar energy conversion. PMID:24521255
Omogo, Benard; Gao, Feng; Bajwa, Pooja; Kaneko, Mizuho; Heyes, Colin D
2016-04-26
Currently, the most common way to reduce blinking in quantum dots (QDs) is accomplished by using very thick and/or perfectly crystalline CdS shells on CdSe cores. Ideally, a nontoxic material such as ZnS is preferred to be the outer material in order to reduce environmental and cytotoxic effects. Blinking suppression with multishell configurations of CdS and ZnS has been reported only for "giant" QDs of 15 nm or more. One of the main reasons for the limited progress is that the role that interfacial trap states play in blinking in these systems is not very well understood. Here, we show a "Goldilocks" effect to reduce blinking in small (∼7 nm) QDs by carefully controlling the thicknesses of the shells in multishell QDs. Furthermore, by correlating the fluorescence lifetime components with the fraction of time that a QD spends in the on-state, both with and without applying a threshold, we found evidence for two types of blinking that separately affect the average fluorescence lifetime of a single QD. A thorough characterization of the time-resolved fluorescence at the ensemble and single-particle level allowed us to propose a detailed physical model involving both short-lived interfacial trap states and long-lived surface trap states that are coupled. This model highlights a strategy of reducing QD blinking in small QDs by balancing the magnitude of the induced lattice strain, which results in the formation of interfacial trap states between the inner shell and the outer shell, and the confinement potential that determines how accessible the interfacial trap states are. The combination of reducing blinking while maintaining a small overall QD size and using a Cd-free outer shell of ZnS will be useful in a wide array of applications, particularly for advanced bioimaging. PMID:27058120
Electron charging in epitaxial germanium quantum dots on silicon (100)
NASA Astrophysics Data System (ADS)
Ketharanathan, Sutharsan
The electron charging behavior of self assembled epitaxial Ge quantum dots on Si(100) grown using molecular beam epitaxy has been studied. Ge quantum dots encapsulated in n-type Si matrix were incorporated into Schottky diodes to investigate their charging behavior using capacitance-voltage measurements. These experimental results were interpreted in the context of theoretical models to assess the degree of charge localization to the dot. Experiments involving Ge quantum dot growth, growth of Sb-doped Si and morphological evolution during encapsulation of the Ge dots during Si overgrowth were performed in order to optimize the conditions for obtaining distinct Ge quantum dot morphologies. This investigation included finding a suitable method to minimize Sb segregation while maintaining good dot epitaxy and overall crystal quality. Holes are confined to the Ge dots for which the valence band offsets are large (˜650 meV). Electrons are confined to the strained Si regions adjacent to the Ge quantum dots which have relatively smaller confinement potentials (˜100--150 meV). Experimentally, it was found that but and pyramid clusters in the range from 20--40 nm in diameter confine ˜1electron per dot while dome clusters in the range from 60--80 nm diameter confine ˜6--8 electrons per dot. Theoretical simulations predict that similar pyramid structures confine ˜0.4 electrons per dot and dome structures confine ˜2.2--3 electrons per dot. Even though the theory and the experimental results disagree due to various uncertainties and approximations, the ratio between theory and experiment agree remarkably well for both island types. We also investigated constructive three-dimensional nanolithography. Nanoscale Au rich dots and pure Ge dots were deposited on SiO2 and Si3N4 substrates by decomposing adsorbed precursors using a focused electron beam in an environmental transmission electron microscope. Dimethyl acetylacetonate gold was used for Au and digermane was used to
Numerical simulation of optical feedback on a quantum dot lasers
Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.
2012-02-15
We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.
Microanalysis of quantum dots with type II band alignments
NASA Astrophysics Data System (ADS)
Sarney, Wendy; Little, John; Svensson, Stefan
2006-03-01
We will discuss the structural characterization of a system consisting of undoped self-assembled InSb quantum dots having a type II band alignment with the surrounding In0.53Ga0.47As matrix. This differs from systems using conventional type-I quantum dots that must be doped and that rely on intersubband transitions for infrared photoresponse. Type II dots grown in a superlattice structure combine the advantages of quantum dots (3-dimensional confinement) with the tunability and photovoltaic operation of the type II superlattice. We grew a high surface density of InSb quantum dots with a narrow distribution of sizes and shapes and free of dislocations within the body of the dots. The dots are relaxed due to an array of misfit dislocations confined at the basal dot/matrix interface. This makes burying the dots with InGaAs not feasible without generating dislocations due to the large dot/matrix lattice mismatch. We are experimenting with strain-compensating or graded strain overlayers to lower the lattice mismatch.
NASA Astrophysics Data System (ADS)
Hackmann, J.; Glasenapp, Ph.; Greilich, A.; Bayer, M.; Anders, F. B.
2015-11-01
The real-time spin dynamics and the spin noise spectra are calculated for p and n -charged quantum dots within an anisotropic central spin model extended by additional nuclear electric quadrupolar interactions and augmented by experimental data. Using realistic estimates for the distribution of coupling constants including an anisotropy parameter, we show that the characteristic long time scale is of the same order for electron and hole spins strongly determined by the quadrupolar interactions even though the analytical form of the spin decay differs significantly consistent with our measurements. The low frequency part of the electron spin noise spectrum is approximately 1 /3 smaller than those for hole spins as a consequence of the spectral sum rule and the different spectral shapes. This is confirmed by our experimental spectra measured on both types of quantum dot ensembles in the low power limit of the probe laser.
Energy levels in self-assembled quantum arbitrarily shaped dots.
Tablero, C
2005-02-01
A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot. PMID:15740390
NASA Astrophysics Data System (ADS)
Gerard, Valerie; Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-10-01
The main goal of our research is to develop new types of technologically important optically active quantum dot (QD) based materials, study their properties and explore their biological applications. For the first time chiral II-VI QDs have been prepared by us using microwave induced heating with the racemic (Rac), D- and L-enantiomeric forms of penicillamine as stabilisers. Circular dichroism (CD) studies of these QDs have shown that D- and L-penicillamine stabilised particles produced mirror image CD spectra, while the particles prepared with a Rac mixture showed only a weak signal. It was also demonstrated that these QDs show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. These QDs have demonstrated highly specific chiral recognition of various biological species including aminoacids. The utilisation of chiral stabilisers also allowed the preparation of new water soluble white emitting CdS nano-tetrapods, which demonstrated circular dichroism in the band-edge region of the spectrum. Biological testing of chiral CdS nanotetrapods displayed a chiral bias for an uptake of the D- penicillamine stabilised nano-tetrapods by cancer cells. It is expected that this research will open new horizons in the chemistry of chiral nanomaterials and their application in nanobiotechnology, medicine and optical chemo- and bio-sensing.
A Nanowire-Based Plasmonic Quantum Dot Laser.
Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko
2016-04-13
Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics. PMID:27030886
A Review of Quantum Confinement
Connerade, Jean-Patrick
2009-12-03
A succinct history of the Confined Atom problem is presented. The hydrogen atom confined to the centre of an impenetrable sphere counts amongst the exactly soluble problems of physics, alongside much more noted exact solutions such as Black Body Radiation and the free Hydrogen atom in absence of any radiation field. It shares with them the disadvantage of being an idealisation, while at the same time encapsulating in a simple way particular aspects of physical reality. The problem was first formulated by Sommerfeld and Welker - henceforth cited as SW - in connection with the behaviour of atoms at very high pressures, and the solution was published on the occasion of Pauli's 60th birthday celebration. At the time, it seemed that there was not much other connection with physical reality beyond a few simple aspects connected to the properties of atoms in solids, for which more appropriate models were soon developed. Thus, confined atoms attracted little attention until the advent of the metallofullerene, which provided the first example of a confined atom with properties quite closely related to those originally considered by SW. Since then, the problem has received much more attention, and many more new features of quantum confinement, quantum compression, the quantum Faraday cage, electronic reorganisation, cavity resonances, etc have been described, which are relevant to real systems. Also, a number of other situations have been uncovered experimentally to which quantum confinement is relevant. Thus, studies of the confined atom are now more numerous, and have been extended both in terms of the models used and the systems to which they can be applied. Connections to thermodynamics are explored through the properties of a confined two-level atom adapted from Einstein's celebrated model, and issues of dynamical screening of electromagnetic radiation by the confining shell are discussed in connection with the Faraday cage produced by a confining conducting shell. The
CORRELATIONS IN CONFINED QUANTUM PLASMAS
DUFTY J W
2012-01-11
This is the final report for the project 'Correlations in Confined Quantum Plasmas', NSF-DOE Partnership Grant DE FG02 07ER54946, 8/1/2007 - 7/30/2010. The research was performed in collaboration with a group at Christian Albrechts University (CAU), Kiel, Germany. That collaboration, almost 15 years old, was formalized during the past four years under this NSF-DOE Partnership Grant to support graduate students at the two institutions and to facilitate frequent exchange visits. The research was focused on exploring the frontiers of charged particle physics evolving from new experimental access to unusual states associated with confinement. Particular attention was paid to combined effects of quantum mechanics and confinement. A suite of analytical and numerical tools tailored to the specific inquiry has been developed and employed
Quantum dot quantum cascade infrared photodetector
NASA Astrophysics Data System (ADS)
Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Jun-Qi; Liu, Feng-Qi; Liu, Shu-Man; Wang, Zhan-Guo
2014-04-01
We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski-Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirped superlattice. Johnson noise limited detectivities of 3.64 × 1011 and 4.83 × 106 Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.
Quantum dot quantum cascade infrared photodetector
Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Jun-Qi E-mail: fqliu@semi.ac.cn; Liu, Feng-Qi E-mail: fqliu@semi.ac.cn; Liu, Shu-Man; Wang, Zhan-Guo
2014-04-28
We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirped superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.
A prototype silicon double quantum dot with dispersive microwave readout
Schmidt, A. R. Henry, E.; Namaan, O.; Siddiqi, I.; Lo, C. C.; Wang, Y.-T.; Bokor, J.; Yablonovitch, E.; Li, H.; Greenman, L.; Whaley, K. B.; Schenkel, T.
2014-07-28
We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.
Suzuki, Nozomu; Wang, Yichun; Elvati, Paolo; Qu, Zhi-Bei; Kim, Kyoungwon; Jiang, Shuang; Baumeister, Elizabeth; Lee, Jaewook; Yeom, Bongjun; Bahng, Joong Hwan; Lee, Jaebeom; Violi, Angela; Kotov, Nicholas A
2016-02-23
Chiral nanostructures from metals and semiconductors attract wide interest as components for polarization-enabled optoelectronic devices. Similarly to other fields of nanotechnology, graphene-based materials can greatly enrich physical and chemical phenomena associated with optical and electronic properties of chiral nanostructures and facilitate their applications in biology as well as other areas. Here, we report that covalent attachment of l/d-cysteine moieties to the edges of graphene quantum dots (GQDs) leads to their helical buckling due to chiral interactions at the "crowded" edges. Circular dichroism (CD) spectra of the GQDs revealed bands at ca. 210-220 and 250-265 nm that changed their signs for different chirality of the cysteine edge ligands. The high-energy chiroptical peaks at 210-220 nm correspond to the hybridized molecular orbitals involving the chiral center of amino acids and atoms of graphene edges. Diverse experimental and modeling data, including density functional theory calculations of CD spectra with probabilistic distribution of GQD isomers, indicate that the band at 250-265 nm originates from the three-dimensional twisting of the graphene sheet and can be attributed to the chiral excitonic transitions. The positive and negative low-energy CD bands correspond to the left and right helicity of GQDs, respectively. Exposure of liver HepG2 cells to L/D-GQDs reveals their general biocompatibility and a noticeable difference in the toxicity of the stereoisomers. Molecular dynamics simulations demonstrated that d-GQDs have a stronger tendency to accumulate within the cellular membrane than L-GQDs. Emergence of nanoscale chirality in GQDs decorated with biomolecules is expected to be a general stereochemical phenomenon for flexible sheets of nanomaterials. PMID:26743467
The transfer matrix approach to circular graphene quantum dots
NASA Astrophysics Data System (ADS)
Chau Nguyen, H.; Nguyen, Nhung T. T.; Nguyen, V. Lien
2016-07-01
We adapt the transfer matrix (T-matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. Similar to one-dimensional problems, we show that the generalized T-matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the T-matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons.
Low Threshold Quantum Dot Lasers.
Iyer, Veena Hariharan; Mahadevu, Rekha; Pandey, Anshu
2016-04-01
Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam. PMID:26978011
A colloidal quantum dot spectrometer
NASA Astrophysics Data System (ADS)
Bao, Jie; Bawendi, Moungi G.
2015-07-01
Spectroscopy is carried out in almost every field of science, whenever light interacts with matter. Although sophisticated instruments with impressive performance characteristics are available, much effort continues to be invested in the development of miniaturized, cheap and easy-to-use systems. Current microspectrometer designs mostly use interference filters and interferometric optics that limit their photon efficiency, resolution and spectral range. Here we show that many of these limitations can be overcome by replacing interferometric optics with a two-dimensional absorptive filter array composed of colloidal quantum dots. Instead of measuring different bands of a spectrum individually after introducing temporal or spatial separations with gratings or interference-based narrowband filters, a colloidal quantum dot spectrometer measures a light spectrum based on the wavelength multiplexing principle: multiple spectral bands are encoded and detected simultaneously with one filter and one detector, respectively, with the array format allowing the process to be efficiently repeated many times using different filters with different encoding so that sufficient information is obtained to enable computational reconstruction of the target spectrum. We illustrate the performance of such a quantum dot microspectrometer, made from 195 different types of quantum dots with absorption features that cover a spectral range of 300 nanometres, by measuring shifts in spectral peak positions as small as one nanometre. Given this performance, demonstrable avenues for further improvement, the ease with which quantum dots can be processed and integrated, and their numerous finely tuneable bandgaps that cover a broad spectral range, we expect that quantum dot microspectrometers will be useful in applications where minimizing size, weight, cost and complexity of the spectrometer are critical.
The emission wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots
Deng, Xingxia; Sun, Jing; Yang, Siwei; Ding, Guqiao; Shen, Hao; Zhou, Wei; Lu, Jian; Wang, Zhongyang
2015-12-14
Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the emission wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.
Not Available
2011-02-01
Researchers at the National Renewable Energy Laboratory (NREL) have certified the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable quantum dot solar cell performance for an initial efficiency measurement along with good stability. The certified open-circuit voltage of the quantum dot cell is greater than that possible from bulk lead sulfide because of quantum confinement.
Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime.
Tóvári, Endre; Makk, Péter; Rickhaus, Peter; Schönenberger, Christian; Csonka, Szabolcs
2016-06-01
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that are formed between the Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states. PMID:27198562
Self-assembly drives quantum dot photoluminescence.
Plain, J; Sonnefraud, Y; Viste, P; Lérondel, G; Huant, S; Royer, P
2009-03-01
Engineering the spectral properties of quantum dots can be achieved by a control of the quantum dots organization on a substrate. Indeed, many applications of quantum dots as LEDs are based on the realization of a 3D architecture of quantum dots. In this contribution, we present a systematic study of the quantum dot organization obtained on different chemically modified substrates. By varying the chemical affinity between the quantum dots and the substrate, the quantum dot organization is strongly modified from the 2D monolayer to the 3D aggregates. Then the photoluminescence of the different obtained samples has been systematically studied and correlated with the quantum dot film organization. We clearly show that the interaction between the substrate and the quantum dot must be stronger than the quantum dot-quantum dot interaction to avoid 3D aggregation and that these organization strongly modified the photoluminescence of the film rather than intrinsic changes of the quantum dot induced by pure surface chemistry. PMID:18792763
Corfdir, P. Van Hattem, B.; Phillips, R. T.; Fontana, Y.; Russo-Averchi, E.; Heiss, M.; Fontcuberta i Morral, A.
2014-12-01
We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga)As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on the orientation of the field with respect to the nanowire axis. The aspect ratio of the X wavefunction is quantified based on the anisotropy of the diamagnetic coefficient. For specific orientations of the magnetic field, it is possible to cancel the g-factor of the bright states of the X and the CX by means of an inversion of the sign of the hole's g-factor, which is promising for quantum information processing applications.
Luminescent graphene quantum dots fabricated by pulsed laser synthesis
Habiba, Khaled; Makarov, Vladimir I.; Avalos, Javier; Guinel, Maxime J.F.; Weiner, Brad R.; Morell, Gerardo
2016-01-01
Graphene has been the subject of intense research in recent years due to its unique electrical, optical and mechanical properties. Furthermore, it is expected that quantum dots of graphene would make their way into devices due to their structure and composition which unify graphene and quantum dots properties. Graphene quantum dots (GQDs) are planar nano flakes with a few atomic layers thick and with a higher surface-to-volume ratio than spherical carbon dots (CDs) of the same size. We have developed a pulsed laser synthesis (PLS) method for the synthesis of GQDs that are soluble in water, measure 2–6 nm across, and are about 1–3 layers thick. They show strong intrinsic fluorescence in the visible region. The source of fluorescence can be attributed to various factors, such as: quantum confinement, zigzag edge structure, and surface defects. Confocal microscopy images of bacteria exposed to GQDs show their suitability as biomarkers and nano-probes in high contrast bioimaging.
NASA Astrophysics Data System (ADS)
Şahin, Mehmet; Köksal, Koray
2012-12-01
Throughout this work, we aim to explore the linear optical properties of a semiconductor multi-shell spherical quantum dot with and without a hydrogenic donor impurity. The core and well layers are defined by the parabolic electronic potentials in the radial direction. The energy levels and corresponding wavefunctions of the structure are calculated by using the shooting technique in the framework of the effective-mass approximation. We investigate the intersublevel absorption coefficients of a single electron and the hydrogenic donor impurity comparatively as a function of the photon energy. In addition, we carry out the effect of a donor impurity and the layer thickness on the oscillator strengths and magnitude and position of absorption coefficient peaks. We illustrate the electron probability distribution and variation of the energy levels in cases with and without the impurity for different thicknesses of layers. This kind of structure gives an opportunity to tune and control the absorption coefficient of the system by changing three different thickness parameters. Also it provides a possibility to separate 0s and 1p electrons in different regions of the quantum dot.
Optical Fiber Sensing Using Quantum Dots
Jorge, Pedro; Martins, Manuel António; Trindade, Tito; Santos, José Luís; Farahi, Faramarz
2007-01-01
Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms.
Semiconductor double quantum dot micromaser.
Liu, Y-Y; Stehlik, J; Eichler, C; Gullans, M J; Taylor, J M; Petta, J R
2015-01-16
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold. PMID:25593187
Gate-defined Quantum Confinement in Suspended Bilayer Graphene
NASA Astrophysics Data System (ADS)
Allen, Monica
2013-03-01
Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.
Brightness-equalized quantum dots
NASA Astrophysics Data System (ADS)
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-10-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices.
Brightness-equalized quantum dots
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-01-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices. PMID:26437175
Density functional calculation of the structural and electronic properties of germanium quantum dots
Anas, M. M.; Gopir, G.
2015-04-24
We apply first principles density functional computational methods to study the structures, densities of states (DOS), and higher occupied molecular orbital (HOMO) – lowest unoccupied molecular orbital (LUMO) gaps of selected free-standing Ge semiconductor quantum dots up to 1.8nm. Our calculations are performed using numerical atomic orbital approach where linear combination of atomic orbital was applied. The surfaces of the quantum dots was passivized by hydrogen atoms. We find that surface passivation does affect the electronic properties associated with the changes of surface state, electron localization, and the energy gaps of germanium nanocrystals as well as the confinement of electrons inside the quantum dots (QDs). Our study shows that the energy gaps of germanium quantum dots decreases with the increasing dot diameter. The size-dependent variations of the computed HOMO-LUMO gaps in our quantum dots model were found to be consistent with the effects of quantum confinement reported in others theoretical and experimental calculation.
Charge transfer magnetoexciton formation at vertically coupled quantum dots.
Gutiérrez, Willian; Marin, Jairo H; Mikhailov, Ilia D
2012-01-01
A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots' dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted. PMID:23092373
Telegraph noise in coupled quantum dot circuits induced by a quantum point contact.
Taubert, D; Pioro-Ladrière, M; Schröer, D; Harbusch, D; Sachrajda, A S; Ludwig, S
2008-05-01
Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific device and measurement conditions these transitions manifest themselves as bounded regimes of telegraph noise within a stability diagram. A nonequilibrium transition from artificial atomic to molecular behavior is identified. Consequences for quantum information applications are discussed. PMID:18518321
Single-Photon Superradiance from a Quantum Dot.
Tighineanu, Petru; Daveau, Raphaël S; Lehmann, Tau B; Beere, Harvey E; Ritchie, David A; Lodahl, Peter; Stobbe, Søren
2016-04-22
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a fivefold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies. PMID:27152804
Single-Photon Superradiance from a Quantum Dot
NASA Astrophysics Data System (ADS)
Tighineanu, Petru; Daveau, Raphaël S.; Lehmann, Tau B.; Beere, Harvey E.; Ritchie, David A.; Lodahl, Peter; Stobbe, Søren
2016-04-01
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a fivefold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies.
Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
NASA Astrophysics Data System (ADS)
Tóvári, Endre; Makk, Péter; Rickhaus, Peter; Schönenberger, Christian; Csonka, Szabolcs
2016-06-01
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that are formed between the Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states.We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that are formed between the Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states. Electronic supplementary information (ESI) available. See DOI: 10.1039/C6NR00187D
Quantum Dots Based Rad-Hard Computing and Sensors
NASA Technical Reports Server (NTRS)
Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.
2001-01-01
Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.
Low Disorder Si MOSFET Dots for Quantum Computing
NASA Astrophysics Data System (ADS)
Nordberg, E. P.; Tracy, L. A.; Ten Eyck, G. A.; Eng, K.; Stalford, H. L.; Childs, K. D.; Stevens, J.; Grubbs, R. K.; Lilly, M. P.; Eriksson, M. A.; Carroll, M. S.
2009-03-01
Silicon quantum dot based qubits have emerged as an appealing approach to extending the success of GaAs spin based double quantum dot qubits. Research in this field is motivated by the promise of long spin coherence times, and within a MOS system the potential for variable carrier density, very small dot sizes, and CMOS compatibility. In this work, we will present results on the fabrication and transport properties of quantum dots in novel double gated Si MOS structures. Coulomb blockade is observed from single quantum dots with extracted charging energies up to an including 5meV. Observed dots were formed both from disorder within a quantum point contact, and through disorder free electrostatic confinement. Extracted capacitances, verified with 3D finite element simulations confirm the location of the disorder free dot to be within the designed lithographic structure. Distinctions will be made regarding the effects of feature sizes and sample processing. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.
Thermoelectric energy harvesting with quantum dots.
Sothmann, Björn; Sánchez, Rafael; Jordan, Andrew N
2015-01-21
We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics. PMID:25549281
Electron states in semiconductor quantum dots
Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.
2014-11-28
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Semiconductor quantum dot-sensitized solar cells
Tian, Jianjun; Cao, Guozhong
2013-01-01
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future. PMID:24191178
Luminescence upconversion in colloidal double quantum dots.
Deutsch, Zvicka; Neeman, Lior; Oron, Dan
2013-09-01
Luminescence upconversion nanocrystals capable of converting two low-energy photons into a single photon at a higher energy are sought-after for a variety of applications, including bioimaging and photovoltaic light harvesting. Currently available systems, based on rare-earth-doped dielectrics, are limited in both tunability and absorption cross-section. Here we present colloidal double quantum dots as an alternative nanocrystalline upconversion system, combining the stability of an inorganic crystalline structure with the spectral tunability afforded by quantum confinement. By tailoring its composition and morphology, we form a semiconducting nanostructure in which excited electrons are delocalized over the entire structure, but a double potential well is formed for holes. Upconversion occurs by excitation of an electron in the lower energy transition, followed by intraband absorption of the hole, allowing it to cross the barrier to a higher energy state. An overall conversion efficiency of 0.1% per double excitation event is achieved. PMID:23912060
Multi-million atom electronic structure calculations for quantum dots
NASA Astrophysics Data System (ADS)
Usman, Muhammad
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in the field of nanoscience. The new and tunable optical and electrical properties of these artificial atoms have been proposed in a variety of different fields, for example in communication and computing systems, medical and quantum computing applications. Predictive and quantitative modeling and simulation of these structures can help to narrow down the vast design space to a range that is experimentally affordable and move this part of nanoscience to nano-Technology. Modeling of such quantum dots pose a formidable challenge to theoretical physicists because: (1) Strain originating from the lattice mismatch of the materials penetrates deep inside the buffer surrounding the quantum dots and require large scale (multi-million atom) simulations to correctly capture its effect on the electronic structure, (2) The interface roughness, the alloy randomness, and the atomistic granularity require the calculation of electronic structure at the atomistic scale. Most of the current or past theoretical calculations are based on continuum approach such as effective mass approximation or k.p modeling capturing either no or one of the above mentioned effects, thus missing some of the essential physics. The Objectives of this thesis are: (1) to model and simulate the experimental quantum dot topologies at the atomistic scale; (2) to theoretically explore the essential physics i.e. long range strain, linear and quadratic piezoelectricity, interband optical transition strengths, quantum confined
Quantitative multiplexed quantum dot immunohistochemistry
Sweeney, E.; Ward, T.H.; Gray, N.; Womack, C.; Jayson, G.; Hughes, A.; Dive, C.; Byers, R.
2008-09-19
Quantum dots are photostable fluorescent semiconductor nanocrystals possessing wide excitation and bright narrow, symmetrical, emission spectra. These characteristics have engendered considerable interest in their application in multiplex immunohistochemistry for biomarker quantification and co-localisation in clinical samples. Robust quantitation allows biomarker validation, and there is growing need for multiplex staining due to limited quantity of clinical samples. Most reported multiplexed quantum dot staining used sequential methods that are laborious and impractical in a high-throughput setting. Problems associated with sequential multiplex staining have been investigated and a method developed using QDs conjugated to biotinylated primary antibodies, enabling simultaneous multiplex staining with three antibodies. CD34, Cytokeratin 18 and cleaved Caspase 3 were triplexed in tonsillar tissue using an 8 h protocol, each localised to separate cellular compartments. This demonstrates utility of the method for biomarker measurement enabling rapid measurement of multiple co-localised biomarkers on single paraffin tissue sections, of importance for clinical trial studies.
Quantum Dot Light Emitting Diode
Keith Kahen
2008-07-31
The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.
Quantum Dot Light Emitting Diode
Kahen, Keith
2008-07-31
The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.
Nano-laser on silicon quantum dots
NASA Astrophysics Data System (ADS)
Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li
2011-04-01
A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d < 3 nm) can make the localized states into band gap. The emission energy of nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.
Tunneling through a quantum dot in a quantum waveguide
NASA Astrophysics Data System (ADS)
Arsen'ev, A. A.
2010-07-01
The problem is considered of scattering in a system consisting of a quantum waveguide and a quantum dot weakly coupled to the waveguide. It is assumed that the quantum waveguide is described by the Pauli equations, and the Rashba spin-orbit interaction is taken into account. The possibility of tunneling through the quantum dot is proved.
The quantum Hall effect in quantum dot systems
NASA Astrophysics Data System (ADS)
Beltukov, Y. M.; Greshnov, A. A.
2014-12-01
It is proposed to use quantum dots in order to increase the temperatures suitable for observation of the integer quantum Hall effect. A simple estimation using Fock-Darwin spectrum of a quantum dot shows that good part of carriers localized in quantum dots generate the intervals of plateaus robust against elevated temperatures. Numerical calculations employing local trigonometric basis and highly efficient kernel polynomial method adopted for computing the Hall conductivity reveal that quantum dots may enhance peak temperature for the effect by an order of magnitude, possibly above 77 K. Requirements to potentials, quality and arrangement of the quantum dots essential for practical realization of such enhancement are indicated. Comparison of our theoretical results with the quantum Hall measurements in InAs quantum dot systems from two experimental groups is also given.
Optically active quantum dots in monolayer WSe2.
Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V; Lembke, Dominik S; Kis, Andras; Imamoğlu, A
2015-06-01
Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature. Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100 meV lower than that of two-dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host transition-metal dichalcogenide. The large ∼1 meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement that is most probably induced by impurities or defects. The possibility of achieving electrical control in van der Waals heterostructures and to exploit the spin-valley degree of freedom renders transition-metal-dichalcogenide quantum dots interesting for quantum information processing. PMID:25938570
Synthetic Developments of Nontoxic Quantum Dots.
Das, Adita; Snee, Preston T
2016-03-01
Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. PMID:26548450
Chiral quantum dot based materials
NASA Astrophysics Data System (ADS)
Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii
2014-05-01
Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.
Electronic Structure of Helium Atom in a Quantum Dot
NASA Astrophysics Data System (ADS)
Jayanta, K. Saha; Bhattacharyya, S.; T. K., Mukherjee
2016-03-01
Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) (n = 1-6) states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns (n = 2-5) and 2pnp (n = 2-5) configurations of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential due to the quantum dot. It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here. TKM Gratefully Acknowledges Financial Support under Grant No. 37(3)/14/27/2014-BRNS from the Department of Atomic Energy, BRNS, Government of India. SB Acknowledges Financial Support under Grant No. PSW-160/14-15(ERO) from University Grants Commission, Government of India
Einstein's Photoemission from Quantum Confined Superlattices.
Debbarma, S; Ghatak, K P
2016-01-01
This paper is dedicated to the 83th Birthday of Late Professor B. R. Nag, D.Sc., formerly Head of the Departments of Radio Physics and Electronics and Electronic Science of the University of Calcutta, a firm believer of the concept of theoretical minimum of Landau and an internationally well known semiconductor physicist, to whom the second author remains ever grateful as a student and research worker from 1974-2004. In this paper, an attempt is made to study, the Einstein's photoemission (EP) from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer quantum well heavily doped superlattices (QWHDSLs) with graded interfaces in the presence of quantizing magnetic field on the basis of newly formulated electron dispersion relations within the frame work of k · p formalism. The EP from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer quantum wells of heavily doped effective mass superlattices respectively has been presented under magnetic quantization. Besides the said emissions, from the quantum dots of the aforementioned heavily doped SLs have further investigated for the purpose of comparison and complete investigation in the context of EP from quantum confined superlattices. Using appropriate SLs, it appears that the EP increases with increasing surface electron concentration and decreasing film thickness in spiky manners, which are the characteristic features of such quantized hetero structures. Under magnetic quantization, the EP oscillates with inverse quantizing magnetic field due to Shuvnikov-de Haas effect. The EP increases with increasing photo energy in a step-like manner and the numerical values of EP with all the physical variables are totally band structure dependent for all the cases. The most striking features are that the presence of poles in the dispersion relation of the materials in the absence of band tails create the complex energy spectra in the corresponding HD constituent materials of such quantum confined superlattices and effective electron
NASA Astrophysics Data System (ADS)
Cichy, B.; Rich, R.; Olejniczak, A.; Gryczynski, Z.; Strek, W.
2016-02-01
Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex recombination kinetics in the QDs being still far from understood, limits their full utility. In this paper we report on a model describing the recombination pathways responsible for large deviations from the first-order decay law observed commonly in the ternary chalcogenides. The presented results were evaluated by means of individual AgInS2 QD spectroscopy aided by first principles calculations including the electronic structure and structural reconstruction of the QDs. Special attention was devoted to study the impact of the surface charge state on the excited state relaxation and effect of its passivation by Zn2+ ion alloying. Two different blinking mechanisms related to defect-assisted charge imbalance in the QD responsible for fast non-radiative relaxation of the excited states as well as surface recharging of the QD were found as the major causes of deviations from the first-order decay law. Careful optimization of the AgInS2 QDs would help to fabricate new red-shifted and tunable fluorescent bio-probes characterized by low-toxicity, high quantum yield, long luminescence lifetime, and time stability, leading to many novel in vitro and in vivo applications based on fluorescence lifetime imaging (FLIM) and time-gated detection.Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex
Zhu, Chengling; Zhu, Shenmin; Zhang, Kai; Hui, Zeyu; Pan, Hui; Chen, Zhixin; Li, Yao; Zhang, Di; Wang, Da-Wei
2016-01-01
Construction of metal oxide nanoparticles as anodes is of special interest for next-generation lithium-ion batteries. The main challenge lies in their rapid capacity fading caused by the structural degradation and instability of solid-electrolyte interphase (SEI) layer during charge/discharge process. Herein, we address these problems by constructing a novel-structured SnO2-based anode. The novel structure consists of mesoporous clusters of SnO2 quantum dots (SnO2 QDs), which are wrapped with reduced graphene oxide (RGO) sheets. The mesopores inside the clusters provide enough room for the expansion and contraction of SnO2 QDs during charge/discharge process while the integral structure of the clusters can be maintained. The wrapping RGO sheets act as electrolyte barrier and conductive reinforcement. When used as an anode, the resultant composite (MQDC-SnO2/RGO) shows an extremely high reversible capacity of 924 mAh g(-1) after 200 cycles at 100 mA g(-1), superior capacity retention (96%), and outstanding rate performance (505 mAh g(-1) after 1000 cycles at 1000 mA g(-1)). Importantly, the materials can be easily scaled up under mild conditions. Our findings pave a new way for the development of metal oxide towards enhanced lithium storage performance. PMID:27181691
NASA Astrophysics Data System (ADS)
Zhu, Chengling; Zhu, Shenmin; Zhang, Kai; Hui, Zeyu; Pan, Hui; Chen, Zhixin; Li, Yao; Zhang, Di; Wang, Da-Wei
2016-05-01
Construction of metal oxide nanoparticles as anodes is of special interest for next-generation lithium-ion batteries. The main challenge lies in their rapid capacity fading caused by the structural degradation and instability of solid-electrolyte interphase (SEI) layer during charge/discharge process. Herein, we address these problems by constructing a novel-structured SnO2-based anode. The novel structure consists of mesoporous clusters of SnO2 quantum dots (SnO2 QDs), which are wrapped with reduced graphene oxide (RGO) sheets. The mesopores inside the clusters provide enough room for the expansion and contraction of SnO2 QDs during charge/discharge process while the integral structure of the clusters can be maintained. The wrapping RGO sheets act as electrolyte barrier and conductive reinforcement. When used as an anode, the resultant composite (MQDC-SnO2/RGO) shows an extremely high reversible capacity of 924 mAh g‑1 after 200 cycles at 100 mA g‑1, superior capacity retention (96%), and outstanding rate performance (505 mAh g‑1 after 1000 cycles at 1000 mA g‑1). Importantly, the materials can be easily scaled up under mild conditions. Our findings pave a new way for the development of metal oxide towards enhanced lithium storage performance.
Zhu, Chengling; Zhu, Shenmin; Zhang, Kai; Hui, Zeyu; Pan, Hui; Chen, Zhixin; Li, Yao; Zhang, Di; Wang, Da-Wei
2016-01-01
Construction of metal oxide nanoparticles as anodes is of special interest for next-generation lithium-ion batteries. The main challenge lies in their rapid capacity fading caused by the structural degradation and instability of solid-electrolyte interphase (SEI) layer during charge/discharge process. Herein, we address these problems by constructing a novel-structured SnO2-based anode. The novel structure consists of mesoporous clusters of SnO2 quantum dots (SnO2 QDs), which are wrapped with reduced graphene oxide (RGO) sheets. The mesopores inside the clusters provide enough room for the expansion and contraction of SnO2 QDs during charge/discharge process while the integral structure of the clusters can be maintained. The wrapping RGO sheets act as electrolyte barrier and conductive reinforcement. When used as an anode, the resultant composite (MQDC-SnO2/RGO) shows an extremely high reversible capacity of 924 mAh g−1 after 200 cycles at 100 mA g−1, superior capacity retention (96%), and outstanding rate performance (505 mAh g−1 after 1000 cycles at 1000 mA g−1). Importantly, the materials can be easily scaled up under mild conditions. Our findings pave a new way for the development of metal oxide towards enhanced lithium storage performance. PMID:27181691
Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector
NASA Astrophysics Data System (ADS)
Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man; Ren, Fei; Ning, Zhen-Dong; Ye, Xiao-Ling; Liu, Jun-Qi; Zhai, Shen-Qiang; Liu, Feng-Qi; Wang, Zhan-Guo
2016-06-01
We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 1011 cm Hz1/2 W-1 at 77 K, which remained at 108 cm Hz1/2 W-1 at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.
Computation of hyperfine energies of hydrogen, deuterium and tritium quantum dots
NASA Astrophysics Data System (ADS)
Çakır, Bekir; Özmen, Ayhan; Yakar, Yusuf
2016-01-01
The hyperfine energies and hyperfine constants of the ground and excited states of hydrogen, deuterium and tritium quantum dots(QDs) are calculated. Quantum genetic algorithm (QGA) and Hartree-Fock-Roothaan (HFR) methods are employed to calculate the unperturbed wave functions and energy eigenvalues. The results show that in the medium and strong confinement regions the hyperfine energy and hyperfine constant are strongly affected by dot radius, impurity charge, electron spin orientation, impurity spin and impurity magnetic moment. Besides, in all dot radii, the hyperfine splitting and hyperfine constant of the confined hydrogen and tritium atoms are approximately equivalent to each other and they are greater than the confined deuterium atom.
Photoluminescence of a quantum-dot molecule
Kruchinin, Stanislav Yu.; Rukhlenko, Ivan D.; Baimuratov, Anvar S.; Leonov, Mikhail Yu.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-01-07
The coherent coupling of quantum dots is a sensitive indicator of the energy and phase relaxation processes taking place in the nanostructure components. We formulate a theory of low-temperature, stationary photoluminescence from a quantum-dot molecule composed of two spherical quantum dots whose electronic subsystems are resonantly coupled via the Coulomb interaction. We show that the coupling leads to the hybridization of the first excited states of the quantum dots, manifesting itself as a pair of photoluminescence peaks with intensities and spectral positions strongly dependent on the geometric, material, and relaxation parameters of the quantum-dot molecule. These parameters are explicitly contained in the analytical expression for the photoluminescence differential cross section derived in the paper. The developed theory and expression obtained are essential in interpreting and analyzing spectroscopic data on the secondary emission of coherently coupled quantum systems.
Anomalous polarization in coupled quantum dots
NASA Astrophysics Data System (ADS)
Xu, X. H.; Jiang, H.; Sun, X.; Lin, H. Q.
2000-04-01
The coupled quantum dots can be designed to possess negative polarizability in low-lying excited states. In an electric field, the coupled dots are polarized, and the dipole moment of the coupled dots is reversed by absorbing one photon. This photoswitch effect is a new photoinduced phenomenon.
Charge transfer magnetoexciton formation at vertically coupled quantum dots
2012-01-01
A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots’ dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted. PMID:23092373
Valley-orbit hybrid states in Si quantum dots
NASA Astrophysics Data System (ADS)
Gamble, John; Friesen, Mark; Coppersmith, S. N.
2013-03-01
The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).
Charge state hysteresis in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Yang, C. H.; Rossi, A.; Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.
2014-11-01
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
Charge state hysteresis in semiconductor quantum dots
Yang, C. H.; Rossi, A. Lai, N. S.; Leon, R.; Lim, W. H.; Dzurak, A. S.
2014-11-03
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
A quantum dot in topological insulator nanofilm.
Herath, Thakshila M; Hewageegana, Prabath; Apalkov, Vadym
2014-03-19
We introduce a quantum dot in topological insulator nanofilm as a bump at the surface of the nanofilm. Such a quantum dot can localize an electron if the size of the dot is large enough, ≳5 nm. The quantum dot in topological insulator nanofilm has states of two types, which belong to two ('conduction' and 'valence') bands of the topological insulator nanofilm. We study the energy spectra of such defined quantum dots. We also consider intraband and interband optical transitions within the dot. The optical transitions of the two types have the same selection rules. While the interband absorption spectra have multi-peak structure, each of the intraband spectra has one strong peak and a few weak high frequency satellites. PMID:24590177
STED nanoscopy with fluorescent quantum dots
NASA Astrophysics Data System (ADS)
Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.
2015-05-01
The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ~50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging.
Thick-shell nanocrystal quantum dots
Hollingsworth, Jennifer A.; Chen, Yongfen; Klimov, Victor I.; Htoon, Han; Vela, Javier
2011-05-03
Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
STED nanoscopy with fluorescent quantum dots
Hanne, Janina; Falk, Henning J.; Görlitz, Frederik; Hoyer, Patrick; Engelhardt, Johann; Sahl, Steffen J.; Hell, Stefan W.
2015-01-01
The widely popular class of quantum-dot molecular labels could so far not be utilized as standard fluorescent probes in STED (stimulated emission depletion) nanoscopy. This is because broad quantum-dot excitation spectra extend deeply into the spectral bands used for STED, thus compromising the transient fluorescence silencing required for attaining super-resolution. Here we report the discovery that STED nanoscopy of several red-emitting commercially available quantum dots is in fact successfully realized by the increasingly popular 775 nm STED laser light. A resolution of presently ∼50 nm is demonstrated for single quantum dots, and sub-diffraction resolution is further shown for imaging of quantum-dot-labelled vimentin filaments in fibroblasts. The high quantum-dot photostability enables repeated STED recordings with >1,000 frames. In addition, we have evidence that the tendency of quantum-dot labels to blink is largely suppressed by combined action of excitation and STED beams. Quantum-dot STED significantly expands the realm of application of STED nanoscopy, and, given the high stability of these probes, holds promise for extended time-lapse imaging. PMID:25980788
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra; Chang, Jerry; Kovtun, Oleg; McBride, James; Tomlinson, Ian
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935
NASA Technical Reports Server (NTRS)
Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.
2000-01-01
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Robust effective Zeeman energy in monolayer MoS2 quantum dots.
Dias, A C; Fu, Jiyong; Villegas-Lelovsky, L; Qu, Fanyao
2016-09-21
We report a theoretical investigation on the energy spectrum and the effective Zeeman energy (EZE) in monolayer MoS2 circular quantum dots, subjected to an out-of-plane magnetic field. Interestingly, we observe the emergence of energy-locked modes, depending on the competition between the dot confinement and the applied magnetic field, for either the highest K-valley valence band or the lowest [Formula: see text]-valley conduction band. Moreover, an unusual dot-size-independent EZE behavior of the highest valence and the lowest conduction bands is found. Although the EZEs are insensitive to the variation of quantum confinement, both of them grow linearly with the magnetic field, similar to that in the monolayer MoS2 material. The EZEs along with their 'robustness' against dot confinements open opportunities of a universal magnetic control over the valley degree of freedom, for quantum dots of all sizes. PMID:27421077
Robust effective Zeeman energy in monolayer MoS2 quantum dots
NASA Astrophysics Data System (ADS)
Dias, A. C.; Fu, Jiyong; Villegas-Lelovsky, L.; Qu, Fanyao
2016-09-01
We report a theoretical investigation on the energy spectrum and the effective Zeeman energy (EZE) in monolayer MoS2 circular quantum dots, subjected to an out-of-plane magnetic field. Interestingly, we observe the emergence of energy-locked modes, depending on the competition between the dot confinement and the applied magnetic field, for either the highest K-valley valence band or the lowest {{K}\\prime} -valley conduction band. Moreover, an unusual dot-size-independent EZE behavior of the highest valence and the lowest conduction bands is found. Although the EZEs are insensitive to the variation of quantum confinement, both of them grow linearly with the magnetic field, similar to that in the monolayer MoS2 material. The EZEs along with their ‘robustness’ against dot confinements open opportunities of a universal magnetic control over the valley degree of freedom, for quantum dots of all sizes.
Optophononics with coupled quantum dots.
Kerfoot, Mark L; Govorov, Alexander O; Czarnocki, Cyprian; Lu, Davis; Gad, Youstina N; Bracker, Allan S; Gammon, Daniel; Scheibner, Michael
2014-01-01
Modern technology is founded on the intimate understanding of how to utilize and control electrons. Next to electrons, nature uses phonons, quantized vibrations of an elastic structure, to carry energy, momentum and even information through solids. Phonons permeate the crystalline components of modern technology, yet in terms of technological utilization phonons are far from being on par with electrons. Here we demonstrate how phonons can be employed to render a single quantum dot pair optically transparent. This phonon-induced transparency is realized via the formation of a molecular polaron, the result of a Fano-type quantum interference, which proves that we have accomplished making typically incoherent and dissipative phonons behave in a coherent and non-dissipative manner. We find the transparency to be widely tunable by electronic and optical means. Thereby we show amplification of weakest coupling channels. We further outline the molecular polaron's potential as a control element in phononic circuitry architecture. PMID:24534815
Adegoke, Oluwasesan; Park, Enoch Y
2016-01-01
The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27-61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72-93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067
NASA Astrophysics Data System (ADS)
Adegoke, Oluwasesan; Park, Enoch Y.
2016-06-01
The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.
Adegoke, Oluwasesan; Park, Enoch Y.
2016-01-01
The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying. PMID:27250067
Decoherence dynamics of two charge qubits in vertically coupled quantum dots
Ben Chouikha, W.; Bennaceur, R.; Jaziri, S.
2007-12-15
The decoherence dynamics of two charge qubits in a double quantum dot is investigated theoretically. We consider the quantum dynamics of two interacting electrons in a vertically coupled quantum dot driven by an external electric field. We derive the equations of motion for the density matrix, in which the presence of an electron confined in the double dot represents one qubit. A Markovian approach to the dynamical evolution of the reduced density matrix is adopted. We evaluate the concurrence of two qubits in order to study the effect of acoustic phonons on the entanglement. We also show that the disentanglement effect depends on the double dot parameters and increases with the temperature.
NASA Astrophysics Data System (ADS)
Gustin, C.; Faniel, S.; Hackens, B.; Melinte, S.; Shayegan, M.; Bayot, V.
2003-12-01
We report on conductance fluctuations of ballistic quantum dots in a strictly parallel magnetic field B. The quantum dots are patterned in two-dimensional electron gases (2DEG’s), confined to 15- and 45-nm-thick GaAs quantum wells (QW) with one and two occupied subbands at B=0, respectively. For both dots we observe universal conductance fluctuations (UCF’s) and, in the case of the wide QW dot, a reduction in their amplitude at large B. Our data suggest that the finite thickness of the 2DEG and the orbital effect are responsible for the parallel B-induced UCF’s.
Tailoring 10 nm scale suspended graphene junctions and quantum dots.
Tayari, Vahid; McRae, Andrew C; Yiğen, Serap; Island, Joshua O; Porter, James M; Champagne, Alexandre R
2015-01-14
The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials. PMID:25490053
Magnetic field dependence of a charge-frustrated state in a triangular triple quantum dot
NASA Astrophysics Data System (ADS)
Seo, M.; Chung, Y.
2013-11-01
We studied the magnetic field dependence of a charge-frustrated state formed in a triangular triple quantum dot. Stability diagrams at various magnetic fields were measured by using two-terminal and three-terminal conductance measurement schemes. We found that the frustrated state broke down at an external magnetic field of around 0.1 T. This result is due to the confinement energy shifts in quantum dots under external magnetic fields. A similar breakdown of the frustrated state was observed when the confinement energy of a quantum dot was intentionally shifted by the plunger gate of the dot, which confirm the reason for the breakdown of the frustrated state under on applied magnetic field. Our measured stability diagrams differed depending on the measurement schemes, which could not be explained by the capacitive interaction model based on an independent particle picture. We believe that the discrepancy is related to the closed electron and hole trajectories inside a triple quantum dot.
Single Electron in Systems of Two and Three Quantum Dots
NASA Astrophysics Data System (ADS)
Filikhin, Igor; Vlahovic, Branislav
We consider the single electron confinement states in the system of two and three quantum dots (QDs). The InAs/GaAs QDs are modeled as laterally distributed dots, using single sub-band effective mass approach with effective potential simulating the strain effect. Electron localization in double quantum dots (DQDs) and in triple quantum dots (TQDs) is studied over the entire electron energy spectrum by varying the geometry parameters of these QDs arrays. It is shown that a small violation of the DQD shape symmetry drastically affects tunneling. This effect also appears as a numerical instability in calculations of spectral distribution of localized/delocalized electron states for small variations of the input parameters of numerical procedure. The effect of adding a third dot to a DQD is investigated. We show that the presence of a third dot increases the tunneling in the initial DQD. The spectral distribution of localized/delocalized states appears sensitive to the violation of the mirror symmetry of TQDs. This work was supported by the NSF (HRD-1345219).
Surface Induced Magnetism in Quantum Dots
Meulenberg, R W; Lee, J I
2009-08-20
The study of nanometer sized semiconductor crystallites, also known as quantum dots (QDs), has seen rapid advancements in recent years in scientific disciplines ranging from chemistry, physics, biology, materials science, and engineering. QD materials of CdSe, ZnSe, InP, as well as many others, can be prepared in the size range of 1-10 nm producing uniform, nearly monodisperse materials that are typically coated with organic molecules [1-3]. The strength of charge carrier confinement, which dictates the size-dependent properties, in these QDs depends on the nature of the material and can be correlated to the Bohr radius for the system of interest. For instance, the Bohr radius for CdSe is {approx} 5 nm, while in the more covalent structure of InP, the Bohr radius approaches {approx} 10 nm. The study of CdSe QDs has been particularly extensive during the last decade because they exhibit unique and tunable optical properties and are readily synthesized with high-crystallinity and narrow size dispersions. Although the core electronic properties of CdSe are explained in terms of the quantum confinement model, experimental efforts to elucidate the surface structure of these materials have been limited. Typically, colloidal CdSe QDs are coated with an organic surfactant, which typically consists of an organo-phosphine, -thiol, or -amine, that has the function of energetically relaxing defect states via coordination to partially coordinated surface atoms. The organic surfactant also acts to enhance carrier confinement and prevent agglomeration of the particles. Chemically, it has been shown that the bonding of the surfactant to the CdSe QD occurs through Cd atoms resulting cleavage of the Se atoms and formation of a Cd-rich (i.e. non-stoichiometric) particle [5].
A detailed theory of excitons in quantum dots
NASA Astrophysics Data System (ADS)
Boero, M.; Rorison, J. M.; Duggan, G.; Inkson, J. C.
1997-04-01
Quantum-dot systems are confined semiconductor structures which exhibit a fully discrete spectrum due to the size confinement in all directions. The position of the energy levels inside such structures can be changed by adjusting their geometrical dimensions. Such structures are particularly interesting for optical applications for two reasons: (i) both the electrons and holes are confined in the same small physical region, and therefore the strength of recombination processes is increased, and (ii) by changing the position of the energy levels, one can in principle tune quantum-dot lasers over a wide range of wavelengths. The presence of size confinement gives rise to two competing effects: on one hand it causes an upward shift of the energy levels, and on the other it enhances the Coulomb attraction between electrons and holes. These effects tend to shift the position of the exciton energies in opposite directions, so that a careful modelling of such structures is required in order to understand which is the dominant effect and how the excitons behave as a function of confinement. While there have been several studies on ideal systems, we attempt to model a system more closely aligned to experiment. In this study we investigate: (i) the effect of the shape of the lateral potential of a quantum disk, i.e. parabolic and hard-wall; (ii) the effect of wave-function leakage in the barries; and (iii) the effect of the light-heavy hole mixing on the effective masses.
Investigations on Landé factor in a strained GaxIn1-xAs/GaAs quantum dot
NASA Astrophysics Data System (ADS)
Kumar, N. R. Senthil; Peter, A. John
2014-04-01
The effective excitonic g-factor as functions of dot radius and the Ga alloy content, in a strained GaxIn1-xAs/GaAs quantum dot, is numerically measured. The heavy hole excitonic states are studied for various Ga alloy content taking into account the anisotropy, non-parabolicity of the conduction band and the geometrical confinement effects. The quantum dot is considered as spherical dot of InAs surrounded by a GaAs barrier material.
Magnon-driven quantum dot refrigerators
NASA Astrophysics Data System (ADS)
Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan
2015-12-01
A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.
Fluorescent Quantum Dots for Biological Labeling
NASA Technical Reports Server (NTRS)
McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit
2003-01-01
Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.
Spatially resolved photoluminescence spectroscopy of quantum dots
NASA Astrophysics Data System (ADS)
Dybiec, Maciej
Recent advancements in nanotechnology create a need for a better understanding of the underlying physical processes that lead to the different behavior of nanoscale structures in comparison to bulk materials. The influence of the surrounding environment on the physical and optical properties of nanoscale objects embedded inside them is of particular interest. This research is focused on the optical properties of semiconductor quantum dots which are zero-dimensional nanostructures. There are many investigation techniques for measuring the local parameters and structural characteristics of Quantum Dot structures. They include X-ray diffraction, Transmission Electron Microscopy, Wavelength Dispersive Spectroscopy, etc. However, none of these is suitable for the study of large areas of quantum dots matrices and substrates. The existence of spatial inhomogeneity in the quantum dots allows for a deeper and better understanding of underlying physical processes responsible in particular for the observed changes in photoluminescence (PL) characteristics. Spectroscopic PL mapping can reveal areas of improved laser performance of InAs - InGaAs quantum dots structures. Establishing physical mechanisms responsible for two different types of spatial PL inhomogeneity in InAs/InGaAs quantum dots structures for laser applications was the first objective of this research. Most of the bio-applications of semiconductor quantum dots utilize their superior optical properties over organic fluorophores. Therefore, optimization of QD labeling performance with biomolecule attachment was another focus of this research. Semiconductor quantum dots suspended in liquids were investigated, especially the influence of surrounding molecules that may be attached or bio-conjugated to the quantum dots for specific use in biological reactions on the photoluminescence spectrum. Provision of underlying physical mechanisms of optical property instability of CdSe/ZnS quantum dots used for biological
Quantum confinement in Si and Ge nanostructures: Theory and experiment
Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.
2014-03-15
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.
Quantum confinement in Si and Ge nanostructures: Theory and experiment
NASA Astrophysics Data System (ADS)
Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.
2014-03-01
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO2, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si3N4 and Al2O3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.
GaN quantum dots as optical transducers for chemical sensors
Weidemann, O.; Jegert, G.; Stutzmann, M.; Kandaswamy, P. K.; Monroy, E.
2009-03-16
GaN/AlN quantum dots were investigated as optical transducers for field effect chemical sensors. The structures were synthesized by molecular-beam epitaxy and covered by a semitransparent catalytic Pt top contact. Due to the thin (3 nm) AlN barriers, the variation of the quantum dot photoluminescence with an external electric field along the [0001] axis is dominated by the tunneling current rather than by the quantum confined Stark effect. An increasing field results in a blueshift of the luminescence and a decreasing intensity. This effect is used to measure the optical response of quantum dot superlattices upon exposure to molecular hydrogen.
Quantum dots and prion proteins
Sobrova, Pavlina; Blazkova, Iva; Chomoucka, Jana; Drbohlavova, Jana; Vaculovicova, Marketa; Kopel, Pavel; Hubalek, Jaromir; Kizek, Rene; Adam, Vojtech
2013-01-01
A diagnostics of infectious diseases can be done by the immunologic methods or by the amplification of nucleic acid specific to contagious agent using polymerase chain reaction. However, in transmissible spongiform encephalopathies, the infectious agent, prion protein (PrPSc), has the same sequence of nucleic acids as a naturally occurring protein. The other issue with the diagnosing based on the PrPSc detection is that the pathological form of prion protein is abundant only at late stages of the disease in a brain. Therefore, the diagnostics of prion protein caused diseases represent a sort of challenges as that hosts can incubate infectious prion proteins for many months or even years. Therefore, new in vivo assays for detection of prion proteins and for diagnosis of their relation to neurodegenerative diseases are summarized. Their applicability and future prospects in this field are discussed with particular aim at using quantum dots as fluorescent labels. PMID:24055838
Triple quantum dots as charge rectifiers.
Busl, M; Platero, G
2012-04-18
We theoretically analyze electronic spin transport through a triple quantum dot in series, attached to electrical contacts, where the drain contact is coupled to the central dot. We show that current rectification is observed in the device due to current blockade. The current blocking mechanism is originated by a destructive interference of the electronic wavefunction at the drain dot. There, the electrons are coherently trapped in a singlet two-electron dark state, which is a coherent superposition of the electronic wavefunction in the source dot and in the dot isolated from the contacts. Its formation gives rise to zero current and current rectification as the voltage is swept. We analyze this behavior analytically and numerically for both zero and finite magnetic dc fields. On top of that, we include phenomenologically a finite spin relaxation rate and calculate the current numerically. Our results show that triple dots in series can be designed to behave as quantum charge rectifiers. PMID:22442135
Entangled exciton states in quantum dot molecules
NASA Astrophysics Data System (ADS)
Bayer, Manfred
2002-03-01
Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For
Self-assembled quantum dots in a nanowire system for quantum photonics.
Heiss, M; Fontana, Y; Gustafsson, A; Wüst, G; Magen, C; O'Regan, D D; Luo, J W; Ketterer, B; Conesa-Boj, S; Kuhlmann, A V; Houel, J; Russo-Averchi, E; Morante, J R; Cantoni, M; Marzari, N; Arbiol, J; Zunger, A; Warburton, R J; Fontcuberta i Morral, A
2013-05-01
Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells. PMID:23377293
Theory Of Alkyl Terminated Silicon Quantum Dots
Reboredo, F; Galli, G
2004-08-19
We have carried out a series of ab-initio calculations to investigate changes in the optical properties of Si quantum dots as a function of surface passivation. In particular, we have compared hydrogen passivated dots with those having alkyl groups at the surface. We find that, while on clusters with reconstructed surfaces a complete alkyl passivation is possible, steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. In addition, our calculations show that steric repulsion may have a dominant effect in determining the surface structure, and eventually the stability of alkyl passivated clusters, with results dependent on the length of the carbon chain. Alkyl passivation weakly affects optical gaps of silicon quantum dots, while it substantially decreases ionization potentials and electron affinities and affect their excited state properties. On the basis of our results we propose that alkyl terminated quantum dots may be size selected taking advantage of the change in ionization potential as a function of the cluster size.
Single to quadruple quantum dots with tunable tunnel couplings
Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K.; Otsuka, T.; Tarucha, S.
2014-03-17
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.
Jahan K, Luhluh Boda, Aalu; Chatterjee, Ashok
2015-05-15
The problem of an exciton trapped in a three dimensional Gaussian quantum dot is studied in the presence of an external magnetic field. A variational method is employed to obtain the ground state energy of the exciton as a function of the quantum dot size, the confinement strength and the magnetic field. It is also shown that the variation of the size of the exciton with the radius of the quantum dot.
Electron spin coherence near room temperature in magnetic quantum dots.
Moro, Fabrizio; Turyanska, Lyudmila; Wilman, James; Fielding, Alistair J; Fay, Michael W; Granwehr, Josef; Patanè, Amalia
2015-01-01
We report on an example of confined magnetic ions with long spin coherence near room temperature. This was achieved by confining single Mn(2+) spins in colloidal semiconductor quantum dots (QDs) and by dispersing the QDs in a proton-spin free matrix. The controlled suppression of Mn-Mn interactions and minimization of Mn-nuclear spin dipolar interactions result in unprecedentedly long phase memory (TM ~ 8 μs) and spin-lattice relaxation (T1 ~ 10 ms) time constants for Mn(2+) ions at T = 4.5 K, and in electron spin coherence observable near room temperature (TM ~ 1 μs). PMID:26040432
Quantum Dots Investigated for Solar Cells
NASA Technical Reports Server (NTRS)
Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.
2001-01-01
The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in
Nanomaterials: Earthworms lit with quantum dots
NASA Astrophysics Data System (ADS)
Tilley, Richard D.; Cheong, Soshan
2013-01-01
Yeast, bacteria and fungi have been used to synthesize a variety of nanocrystals. Now, the metal detoxification process in the gut of an earthworm is exploited to produce biocompatible cadmium telluride quantum dots.
Submonolayer Quantum Dot Infrared Photodetector
NASA Technical Reports Server (NTRS)
Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang
2010-01-01
A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
Colloidal quantum dot materials for infrared optoelectronics
NASA Astrophysics Data System (ADS)
Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.
2015-09-01
Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.
Synthesis, Characterization and Application Of PbS Quantum Dots
Sarma, Sweety; Datta, Pranayee; Barua, Kishore Kr.; Karmakar, Sanjib
2009-06-29
Lead Chalcogenides (PbS, PbSe, PbTe) quantum dots (QDs) are ideal for fundamental studies of strongly quantum confined systems with possible technological applications. Tunable electronic transitions at near--infrared wavelengths can be obtained with these QDs. Applications of lead chalcogenides encompass quite a good number of important field viz. the fields of telecommunications, medical electronics, optoelectronics etc. Very recently, it has been proposed that 'memristor'(Memory resistor) can be realized in nanoscale systems with coupled ionic and electronic transports. The hystersis characteristics of 'memristor' are observed in many nanoscale electronic devices including semiconductor quantum dot devices. This paper reports synthesis of PbS QDs by chemical route. The fabricated samples are characterized by UV-Vis, XRD, SEM, TEM, EDS, etc. Observed characteristics confirm nano formation. I-V characteristics of the sample are studied for investigating their applications as 'memristor'.
Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Wei, Guohua; Czaplewski, David A.; Jung, Il Woong; Lenferink, Erik J.; Stanev, Teodor K.; Stern, Nathaniel P.
Controlling the size of semiconductor nanostructures allows manipulation of the optical and electrical properties of band carriers. We show that laterally-confined monolayer MoS2 quantum dots can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor. Semiconductor-compatible nanofabrication processing allows for these low-dimensional materials to be integrated into complex systems that harness their controllable optical properties. Size-dependent exciton energy shifts and linewidths are observed, demonstrating the influence of quantum confinement. The patterned dots exhibit the same valley polarization characteristics as in a continuous MoS2 sheet, suggesting that monolayer semiconductor quantum dots could have potential for advancing quantum information applications. This work is supported by ISEN, the DOE-BES (DE-SC0012130), the NSF MRSEC program (DMR-1121262), and the Center for Nanoscale Materials, DOE-BES (DE-AC02-06CH11357). N.P.S. is an Alfred P. Sloan Research Fellow.
Renormalization in Periodically Driven Quantum Dots.
Eissing, A K; Meden, V; Kennes, D M
2016-01-15
We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump. PMID:26824557
First principle thousand atom quantum dot calculations
Wang, Lin-Wang; Li, Jingbo
2004-03-30
A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.
Microstructural characterization of quantum dots with type-II band alignments
NASA Astrophysics Data System (ADS)
Sarney, W. L.; Little, J. W.; Svensson, S. P.
2006-06-01
We are investigating the structural, electrical, and infrared (IR) optical properties of a new material system comprising undoped self-assembled quantum dots having a type-II band alignment with the surrounding matrix. This materials system is fundamentally different from those using conventional type-I quantum dots that must be doped and that rely on intersubband transitions for IR photoresponse. Type-II quantum dots operate in the photovoltaic mode with IR photoresponse arising from electron-hole pair production involving three-dimensionally confined states in the dots and quantum well states in the matrix material. In this paper, we discuss the structural characterization of molecular beam epitaxy (MBE)-grown InSb quantum dots embedded in an In 0.53Ga 0.47As matrix lattice-matched to an InP substrate.
Quantum Dots in Gated Nanowires and Nanotubes
NASA Astrophysics Data System (ADS)
Churchill, Hugh Olen Hill
This thesis describes experiments on quantum dots made by locally gating one-dimensional quantum wires. The first experiment studies a double quantum dot device formed in a Ge/Si core/shell nanowire. In addition to measuring transport through the double dot, we detect changes in the charge occupancy of the double dot by capacitively coupling it to a third quantum dot on a separate nanowire using a floating gate. We demonstrate tunable tunnel coupling of the double dot and quantify the strength of the tunneling using the charge sensor. The second set of experiments concerns carbon nanotube double quantum dots. In the first nanotube experiment, spin-dependent transport through the double dot is compared in two sets of devices. The first set is made with carbon containing the natural abundance of 12C (99%) and 13C (1%), the second set with the 99% 13C and 1% 12C. In the devices with predominantly 13C, we find evidence in spin-dependent transport of the interaction between the electron spins and the 13C nuclear spins that was much stronger than expected and not present in the 12C devices. In the second nanotube experiment, pulsed gate experiments are used to measure the timescales of spin relaxation and dephasing in a two-electron double quantum dot. The relaxation time is longest at zero magnetic field and goes through a minimum at higher field, consistent with the spin-orbit-modified electronic spectrum of carbon nanotubes. We measure a short dephasing time consistent with the anomalously strong electron-nuclear interaction inferred from the first nanotube experiment.
Strain-Induced Localized States Within the Matrix Continuum of Self-Assembled Quantum Dots
Popescu, V.; Bester, G.; Zunger, A.
2009-07-01
Quantum dot-based infrared detectors often involve transitions from confined states of the dot to states above the minimum of the conduction band continuum of the matrix. We discuss the existence of two types of resonant states within this continuum in self-assembled dots: (i) virtual bound states, which characterize square wells even without strain and (ii) strain-induced localized states. The latter emerge due to the appearance of 'potential wings' near the dot, related to the curvature of the dots. While states (i) do couple to the continuum, states (ii) are sheltered by the wings, giving rise to sharp absorption peaks.
Optimal control strategies for coupled quantum dots
NASA Astrophysics Data System (ADS)
Räsänen, Esa; Putaja, Antti; Mardoukhi, Yousof
2013-09-01
Semiconductor quantum dots are ideal candidates for quantum information applications in solid-state technology. However, advanced theoretical and experimental tools are required to coherently control, for example, the electronic charge in these systems. Here we demonstrate how quantum optimal control theory provides a powerful way to manipulate the electronic structure of coupled quantum dots with an extremely high fidelity. As alternative control fields we apply both laser pulses as well as electric gates, respectively. We focus on double and triple quantum dots containing a single electron or two electrons interacting via Coulomb repulsion. In the two-electron situation we also briefly demonstrate the challenges of timedependent density-functional theory within the adiabatic local-density approximation to produce comparable results with the numerically exact approach.
Theory of Energy Level Tuning in Quantum Dots by Surfactants
NASA Astrophysics Data System (ADS)
Zherebetskyy, Danylo; Wang, Lin-Wang; Materials Sciences Division, Lawrence Berkeley National Laboratory Team
2015-03-01
Besides quantum confinement that provides control of the quantum dot (QD) band gap, surface ligands allow control of the absolute energy levels. We theoretically investigate energy level tuning in PbS QD by surfactant exchange. We perform direct calculations of real-size QD with various surfactants within the frame of the density functional theory and explicitly analyze the influence of the surfactants on the electronic properties of the QD. This work provides a hint for predictable control of the absolute energy levels and their fine tuning within 3 eV range by modification of big and small surfactants that simultaneously passivate the QD surface.
NASA Astrophysics Data System (ADS)
Kim, Song-Hyok; Kang, Chol-Jin; Kim, Yon-Il; Kim, Kwang-Hyon
2015-05-01
We consider a triple quantum dot system in a triangular geometry with one of the dots connected to metallic leads. We investigate quantum phase transition between local moment phase and Kondo screened strong coupling phase in triple quantum dots where energy levels of dots are deviated from the particle-hole symmetric point. The effect of on-site energy of dots on quantum phase transition between local moment phase and Kondo screened strong coupling phase in triple quantum dots is studied based on the analytical arguments and the numerical renormalization group method. The results show that the critical value of tunnel coupling between side dots decreases when the energy level of embedded dot rises up from the symmetric point to the Fermi level and the critical value increases when the energy levels of two side dots rise up. The study of the influence of on-site-energy changes on the quantum phase transitions in triple quantum dots has the importance for clarifying the mechanism of Kondo screening in triple quantum dots where energy levels of dots are deviated from the particle-hole symmetric point.
Multiple Exciton Generation in PbSe Quantum Dots and Quantum Dot Solar Cells
Beard, M. C.; Semonin, O. E.; Nozik, A. J.; Midgett, A. G.; Luther, J. M.
2012-01-01
Multiple exciton generation in quantum dots (QDs) has been intensively studied as a way to enhance solar energy conversion by channeling the excess photon energy (energy greater than the bandgap) to produce multiple electron-hole pairs. Among other useful properties, quantum confinement can both increase Coulomb interactions that drive the MEG process and decrease the electron-phonon coupling that cools hot-excitons in bulk semiconductors. We have demonstrated that MEG in PbSe QDs is about two times as efficient at producing multiple electron-hole pairs than bulk PbSe. I will discuss our recent results investigating MEG in PbSe, PbS and PbSxSe1-x, which exhibits an interesting size-dependence of the MEG efficiency. Thin films of electronically coupled PbSe QDs have shown promise in simple photon-to-electron conversion architectures with power conversion efficiencies above 5%. We recently reported an enhancement in the photocurrent resulting from MEG in PbSe QD-based solar cells. We find that the external quantum efficiency (spectrally resolved ratio of collected charge carriers to incident photons) peaked at 114% in the best devices measured, with an internal quantum efficiency of 130%. These results demonstrate that MEG charge carriers can be collected in suitably designed QD solar cells. We compare our results to transient absorption measurements and find reasonable agreement.
Quantum-dot-in-perovskite solids.
Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H
2015-07-16
Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics. PMID:26178963
Quantum-dot-in-perovskite solids
NASA Astrophysics Data System (ADS)
Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H.
2015-07-01
Heteroepitaxy--atomically aligned growth of a crystalline film atop a different crystalline substrate--is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned `dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Luminescent Quantum Dots as Ultrasensitive Biological Labels
NASA Astrophysics Data System (ADS)
Nie, Shuming
2000-03-01
Highly luminescent semiconductor quantum dots have been covalently coupled to biological molecules for use in ultrasensitive biological detection. This new class of luminescent labels is considerably brighter and more resistant againt photobleaching in comparison with organic dyes. Quantum dots labeled with the protein transferrin undergo receptor-mediated endocytosis (RME) in cultured HeLa cells, and those dots that were conjugated to immunomolecules recognize specific antibodies or antigens. In addition, we show that DNA functionalized quantum dots can be used to target specific genes by hybridization. We expect that quantum dot bioconjugates will have a broad range of biological applications, such as ligand-receptor interactions, real-time monitoring of molecular trafficking inside living cells, multicolor fluorescence in-situ hybridization (FISH), high-sensitivity detection in miniaturized devices (e.g., DNA chips), and fluorescent tagging of combinatorial chemical libraries. A potential clinical application is the use of quantum dots for ultrasensitive viral RNA detection, in which as low as 100 copies of hepatitis C and HIV viruses per ml blood should be detected.
Spectroscopy characterization and quantum yield determination of quantum dots
NASA Astrophysics Data System (ADS)
Contreras Ortiz, S. N.; Mejía Ospino, E.; Cabanzo, R.
2016-02-01
In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum.
(In,Mn)As multilayer quantum dot structures
Bouravleuv, Alexei; Sapega, Victor; Nevedomskii, Vladimir; Khrebtov, Artem; Samsonenko, Yuriy; Cirlin, George
2014-12-08
(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.
NASA Astrophysics Data System (ADS)
Beveratos, Alexios; Abram, Izo; Gérard, Jean-Michel; Robert-Philip, Isabelle
2014-12-01
For the past fifteen years, single semiconductor quantum dots, often referred to as solid-state artificial atoms, have been at the forefront of various research direction lines for experimental quantum information science, in particular in the development of practical sources of quantum states of light. Here we review the research to date, on the tailoring of the emission properties from single quantum dots producing single photons, indistinguishable single photons and entangled photon pairs. Finally, the progress and future prospects for applications of single dots in quantum information processing is considered.
Optical properties of charged semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Jha, Praket P.
The effect of n-type doping on the luminescence properties of II-VI quantum dots is studied. The addition of two shells of CdS on CdSe quantum dots prevents the creation of surface traps and makes the system stable under reducing environment. The injection of electrons into films of quantum dots leads to lower photoluminescence (PL) efficiency, with the extent of quenching dependent on both the number and the quantum states of the spectator charges in the nanocrystal. It is found that a 1Pe electron is an eightfold better PL quencher than the 1Se electron. Reduced threshold for stimulated emission is also observed in doped CdSe/CdS films. Time resolved photoluminescence measurements are used to extract the recombination rates of a charged exciton, called trion. It is observed that the negative trion has a radiative rate ˜2.2 +/- 0.4x faster than a neutral exciton, while its non-radiative recombination rate is slower than the biexciton non-radiative recombination rate by a factor of 7.5 +/- 1.7. The knowledge of the recombination rates of the trion enables us to calculate the quantum yield of a negative trion to be ˜10% for the nanocrystals investigated in our work. This is larger than the off state quantum yield from a single quantum dot photoluminescence trajectory and eliminates the formation of negative trion as the possible reason for the PL blinking of single quantum dots. Single quantum dot electrochemistry has also been achieved. It is shown that by varying the Fermi level of the system electrons can be reversibly injected into and extracted out of single CdSe/CdS and CdSe/ZnS nanoparticles to modulate the photoluminescence.
Optically controlled spins in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Economou, Sophia
2010-03-01
Spins in charged semiconductor quantum dots are currently generating much interest, both from a fundamental physics standpoint, as well as for their potential technological relevance. Being naturally a two-level quantum system, each of these spins can encode a bit of quantum information. Optically controlled spins in quantum dots possess several desirable properties: their spin coherence times are long, they allow for all-optical manipulation---which translates into fast logic gates---and their coupling to photons offers a straightforward route to exchange of quantum information between spatially separated sites. Designing the laser fields to achieve the unprecedented amount of control required for quantum information tasks is a challenging goal, towards which there has been recent progress. Special properties of hyperbolic secant optical pulses enabled the design of single qubit rotations, initially developed about the growth axis z [1], and later about an arbitrary direction [2]. Recently we demonstrated our theoretical proposal [1] in an ensemble of InAs/GaAs quantum dots by implementing ultrafast rotations about the z axis by an arbitrary angle [3], with the angle of rotation as a function of the optical detuning in excellent agreement with the theoretical prediction. We also developed two-qubit conditional control in a quantum dot `molecule' using the electron-hole exchange interaction [4]. In addition to its importance in quantum dot-based quantum computation, our two-qubit gate can also play an important role in photonic cluster state generation for measurement-based quantum computing [5]. [1] S. E. Economou, L. J. Sham, Y. Wu, D. S. Steel, Phys. Rev. 74, 205415 (2006) [2] S. E. Economou and T. L. Reinecke, Phys. Rev. Lett., 99, 217401 (2007) [3] A. Greilich, S. E. Economou et al, Nature Phys. 5, 262 (2009) [4] S. E. Economou and T. L. Reinecke, Phys. Rev. B, 78, 115306 (2008) [5] S. E. Economou, N. H. Lindner, and T. Rudolph, in preparation
Transparent conducting films of CdSe(ZnS) core(shell) quantum dot xerogels.
Korala, Lasantha; Li, Li; Brock, Stephanie L
2012-09-01
A method of fabricating sol-gel quantum dot (QD) films is demonstrated, and their optical, structural and electrical properties are evaluated. The CdSe(ZnS) xerogel films remain quantum confined, yet are highly conductive (10(-3) S cm(-1)). This approach provides a pathway for the exploitation of QD gels in optoelectronic applications. PMID:22801641
Quantum dots as active material for quantum cascade lasers: comparison to quantum wells
NASA Astrophysics Data System (ADS)
Michael, Stephan; Chow, Weng W.; Schneider, Hans Christian
2016-03-01
We review a microscopic laser theory for quantum dots as active material for quantum cascade lasers, in which carrier collisions are treated at the level of quantum kinetic equations. The computed characteristics of such a quantum-dot active material are compared to a state-of-the-art quantum-well quantum cascade laser. We find that the current requirement to achieve a comparable gain-length product is reduced compared to that of the quantum-well quantum cascade laser.
Origins and optimization of entanglement in plasmonically coupled quantum dots
NASA Astrophysics Data System (ADS)
Otten, Matthew; Larson, Jeffrey; Min, Misun; Wild, Stefan M.; Pelton, Matthew; Gray, Stephen K.
2016-08-01
A system of two or more quantum dots interacting with a dissipative plasmonic nanostructure is investigated in detail by using a cavity quantum electrodynamics approach with a model Hamiltonian. We focus on determining and understanding system configurations that generate multiple bipartite quantum entanglements between the occupation states of the quantum dots. These configurations include allowing for the quantum dots to be asymmetrically coupled to the plasmonic system. Analytical solution of a simplified limit for an arbitrary number of quantum dots and numerical simulations and optimization for the two- and three-dot cases are used to develop guidelines for maximizing the bipartite entanglements. For any number of quantum dots, we show that through simple starting states and parameter guidelines, one quantum dot can be made to share a strong amount of bipartite entanglement with all other quantum dots in the system, while entangling all other pairs to a lesser degree.
Spin-orbit induced two-electron spin relaxation in double quantum dots
NASA Astrophysics Data System (ADS)
Borhani, Massoud; Hu, Xuedong
2011-03-01
We study the spin decay of two electrons confined in a double quantum dots via the spin-orbit interaction and acoustic phonons. We have obtained a generic form for the spin Hamiltonian for two electrons confined in (elliptic) harmonic potentials in doubles dots and in the presence of an arbitrary applied magnetic field. Our focus is on the interdot bias regime where singlet-triplet splitting is small, in contrast to the spin-blockade regime. Our results clarify the spin-orbit mediated two-spin relaxation in lateral/nanowire quantum dots, particularly when the confining potentials are different in each dot. We thank support by NSA/LPS thorugh ARO.
Dot-in-Well Quantum-Dot Infrared Photodetectors
NASA Technical Reports Server (NTRS)
Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung
2008-01-01
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material
NASA Astrophysics Data System (ADS)
Sumanth Kumar, D.; Jai Kumar, B.; Mahesh H., M.
2016-05-01
We have explored an easiest and simplest aqueous route to synthesize bright green luminescent CdS QDs using 3-Mercaptopropionic acid (MPA) as a stabilizer in air ambient for solar cell applications. The CdS quantum dots showed a strong quantum confinement effect with good stability, size and excellent photoluminescence. MPA Capping on CdS QDs was confirmed through FTIR. The Optical absorption spectrum revealed the CdS quantum dots are highly transparent in the visible region with absorption peak at 380 nm, confirming the quantum confinement. Photoluminescence showed an emission peak at 525 nm wavelength. The optical band gap energy was found to be 3.19 eV and CdS quantum dots radius calculated using Brus equation is 1.5 nm. The results are presented and discussed in detail.
Charge transport through a semiconductor quantum dot-ring nanostructure
NASA Astrophysics Data System (ADS)
Kurpas, Marcin; Kędzierska, Barbara; Janus-Zygmunt, Iwona; Gorczyca-Goraj, Anna; Wach, Elżbieta; Zipper, Elżbieta; Maśka, Maciej M.
2015-07-01
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.
Magnetic quantum dots and rings in two dimensions
NASA Astrophysics Data System (ADS)
Downing, C. A.; Portnoi, M. E.
2016-07-01
We consider the motion of electrons confined to a two-dimensional plane with an externally applied perpendicular inhomogeneous magnetic field, both with and without a Coulomb potential. We find that as long as the magnetic field is slowly decaying, bound states in magnetic quantum dots are indeed possible. Several example cases of such magnetic quantum dots are considered in which one can find the eigenvalues and eigenfunctions in closed form, including two hitherto unknown quasi-exactly-solvable models treated with confluent and biconfluent Heun polynomials. It is shown how a modulation of the strength of the magnetic field can exclude magnetic vortexlike states, rotating with a certain angular momenta and possessing a definite spin orientation, from forming. This indicates one may induce localization-delocalization transitions and suggests a mechanism for spin separation.
Quantum efficiency of a double quantum dot microwave photon detector
NASA Astrophysics Data System (ADS)
Wong, Clement; Vavilov, Maxim
Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we study charge transfer through a double quantum dot (DQD) capacitively coupled to a superconducting cavity subject to a microwave field. We analyze the DQD current response using input-output theory and determine the optimal parameter regime for complete absorption of radiation and efficient conversion of microwave photons to electric current. For experimentally available DQD systems, we show that the cavity-coupled DQD operates as a photon-to-charge converter with quantum efficiencies up to 80% C.W. acknowledges support by the Intelligence Community Postdoctoral Research Fellowship Program.
Electron properties in directed self-assembly Ge/SiC/Si quantum dots
NASA Astrophysics Data System (ADS)
Yang, Dongyue
Artificially ordered semiconductor quantum dot (QD) patterns may be used to implement functionalities such as spintronic bandgap systems, quantum simulation and quantum computing, by manipulating the interaction between confined carriers via direct exchange coupling. In this dissertation, magnetotransport measurements have been conducted to investigate the electronic orbital and spin states of directed self-assembly single- and few-Ge/SiC/Si QD devices, fabricated by a directed self-assembly QD growth technique developed by our group. Diamagnetic and Zeeman energy shifts of electrons confined around the QD have been observed from the magnetotransport experiments. A triple-barrier resonant tunneling model has been proposed to describe the electron and spin transport. The strength of the Coulomb interaction between electrons confined at neighboring QDs has been observed dependent on the dot separation, and represents an important parameter for fabricating QD-based molecules and artificial arrays, which may be implemented as building blocks for future quantum simulation and quantum computing architectures.
Surface treatment of nanocrystal quantum dots after film deposition
Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro
2015-02-03
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
Excitonic optical properties of wurtzite ZnS quantum dots under pressure
Zeng, Zaiping; Garoufalis, Christos S.; Baskoutas, Sotirios; Bester, Gabriel
2015-03-21
By means of atomistic empirical pseudopotentials combined with a configuration interaction approach, we have studied the optical properties of wurtzite ZnS quantum dots in the presence of strong quantum confinement effects as a function of pressure. We find the pressure coefficients of quantum dots to be highly size-dependent and reduced by as much as 23% in comparison to the bulk value of 63 meV/GPa obtained from density functional theory calculations. The many-body excitonic effects on the quantum dot pressure coefficients are found to be marginal. The absolute gap deformation potential of quantum dots originates mainly from the energy change of the lowest unoccupied molecular orbital state. Finally, we find that the exciton spin-splitting increases nearly linearly as a function of applied pressure.
Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide.
Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei
2010-11-19
Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells. PMID:20975214
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
Quantum dot spin coherence governed by a strained nuclear environment.
Stockill, R; Le Gall, C; Matthiesen, C; Huthmacher, L; Clarke, E; Hugues, M; Atatüre, M
2016-01-01
The interaction between a confined electron and the nuclei of an optically active quantum dot provides a uniquely rich manifestation of the central spin problem. Coherent qubit control combines with an ultrafast spin-photon interface to make these confined spins attractive candidates for quantum optical networks. Reaching the full potential of spin coherence has been hindered by the lack of knowledge of the key irreversible environment dynamics. Through all-optical Hahn echo decoupling we now recover the intrinsic coherence time set by the interaction with the inhomogeneously strained nuclear bath. The high-frequency nuclear dynamics are directly imprinted on the electron spin coherence, resulting in a dramatic jump of coherence times from few tens of nanoseconds to the microsecond regime between 2 and 3 T magnetic field and an exponential decay of coherence at high fields. These results reveal spin coherence can be improved by applying large magnetic fields and reducing strain inhomogeneity. PMID:27615704
Biexciton induced refractive index changes in a semiconductor quantum dot
NASA Astrophysics Data System (ADS)
Shojaei, S.
2015-06-01
We present a detailed theoretical study of linear and third order nonlinear refractive index changes in a optically driven disk-like GaN quantum dot. In our numerical calculations, we consider the three level system containing biexciton, exciton, and ground states and use the compact density matrix formalism and iterative method to obtain refractive index changes. Variational method through effective mass approximation are employed to calculate the ground state energy of biexciton and exciton states. The evolution of refractive index changes around one, two and three photon resonance is investigated and discussed for different quantum dot sizes and light intensities. Size-dependent three-photon nonlinear refractive index change versus incident photon energy compared to that of two-photon is obtained and analyzed. As main result, we found that around resonance frequency at exciton-biexciton transition the quantum confinement has great influence on the linear change in refractive index so that for very large quantum dots, it decreases. Moreover, it was found that third order refractive index changes for three photon process is strongly dependent on QD size and light intensity. Our study reveals that considering our simple model leads to results which are in good agreement with other rare numerical results. Comparison with experimental results has been done.
Electrical control of quantum dot spin qubits
NASA Astrophysics Data System (ADS)
Laird, Edward Alexander
This thesis presents experiments exploring the interactions of electron spins with electric fields in devices of up to four quantum dots. These experiments are particularly motivated by the prospect of using electric fields to control spin qubits. A novel hyperfine effect on a single spin in a quantum dot is presented in Chapter 2. Fluctuations of the nuclear polarization allow single-spin resonance to be driven by an oscillating electric field. Spin resonance spectroscopy revealed a nuclear polarization built up inside the quantum dot device by driving the resonance. The evolution of two coupled spins is controlled by the combination of hyperfine interaction, which tends to cause spin dephasing, and exchange, which tends to prevent it. In Chapter 3, dephasing is studied in a device with tunable exchange, probing the crossover between exchange-dominated and hyperfine-dominated regimes. In agreement with theoretical predictions, oscillations of the spin conversion probability and saturation of dephasing are observed. Chapter 4 deals with a three-dot device, suggested as a potential qubit controlled entirely by exchange. Preparation and readout of the qubit state are demonstrated, together with one out of two coherent exchange operations needed for arbitrary manipulations. A new readout technique allowing rapid device measurement is described. In Chapter 5, an attempt to make a two-qubit gate using a four-dot device is presented. Although spin qubit operation has not yet been possible, the electrostatic interaction between pairs of dots was measured to be sufficient in principle for coherent qubit coupling.
Mapping Image Potential States on Graphene Quantum Dots
NASA Astrophysics Data System (ADS)
Craes, Fabian; Runte, Sven; Klinkhammer, Jürgen; Kralj, Marko; Michely, Thomas; Busse, Carsten
2013-08-01
Free-electron-like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the spatial position on top, indicating lateral confinement. Analysis of the substructure of the first state by the spatial mapping of the constant energy local density of states reveals characteristic patterns of confined states. The most pronounced state is not the ground state, but an excited state with a favorable combination of the local density of states and parallel momentum transfer in the tunneling process. Chemical gating tunes the confining potential by changing the local work function. Our experimental determination of this work function allows us to deduce the associated shift of the Dirac point.
Mapping image potential states on graphene quantum dots.
Craes, Fabian; Runte, Sven; Klinkhammer, Jürgen; Kralj, Marko; Michely, Thomas; Busse, Carsten
2013-08-01
Free-electron-like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the spatial position on top, indicating lateral confinement. Analysis of the substructure of the first state by the spatial mapping of the constant energy local density of states reveals characteristic patterns of confined states. The most pronounced state is not the ground state, but an excited state with a favorable combination of the local density of states and parallel momentum transfer in the tunneling process. Chemical gating tunes the confining potential by changing the local work function. Our experimental determination of this work function allows us to deduce the associated shift of the Dirac point. PMID:23952430
NASA Astrophysics Data System (ADS)
Hasaneen, El-Sayed; Heller, Evan; Bansal, Rajeev; Jain, Faquir
2003-10-01
In this paper, we compute the tunneling of electrons in a nonvolatile quantum dot memory (NVQDM) cell during the WRITE operation. The transition rate of electrons from a quantum well channel to the quantum dots forming the floating gate is calculated using a recently reported method by Chuang et al.[1]. Tunneling current is computed based on transport of electrons from the channel to the floating quantum dots. The maximum number of electrons on a dot is calculated using surface electric field and break down voltage of the tunneling dielectric material. Comparison of tunneling for silicon oxide and high-k dielectric gate insulators is also described. Capacitance-Voltage characteristics of a NVQDM device are calculated by solving the Schrodinger and Poisson equations self-consistently. In addition, the READ operation of the memory has been investigated analytically. Results for 70 nm channel length Si NVQDMs are presented. Threshold voltage is calculated including the effect of the charge on nanocrystal quantum dots. Current-voltage characteristics are obtained using BSIM3v3 model [2-3]. This work is supported by Office of Navel Research (N00014210883, Dr. D. Purdy, Program Monitor), Connecticut Innovations Inc./TranSwitch (CII # 00Y17), and National Science Foundation (CCR-0210428) grants. [1] S. L. Chuang and N. Holonyak, Appl. Phys. Lett., 80, pp. 1270, 2002. [2] Y. Chen et. al., BSIM3v3 Manual, Elect. Eng. and Comp. Dept., U. California, Berkeley, CA, 1996. [3] W. Liu, MOSFET Models for SPICE Simulation, John Wiley & Sons, Inc., 2001.
Controlled Population Transfer in a Double Quantum Dot System
Fountoulakis, Antonios; Terzis, Andreas F.; Paspalakis, Emmanuel
2007-12-26
We study the potential for controlled population transfer between the ground states of two anharmonic coupled quantum dots. We propose a method based on the interaction of the quantum dot structure with external electromagnetic fields. The interaction of the quantum dot system with the electromagnetic fields is studied with the use of the time-dependent Schroedinger equation. We present numerical results for an asymmetric quantum dot structure.
Isotopically enhanced triple-quantum-dot qubit
Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.
2015-01-01
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186
Isotopically enhanced triple-quantum-dot qubit.
Eng, Kevin; Ladd, Thaddeus D; Smith, Aaron; Borselli, Matthew G; Kiselev, Andrey A; Fong, Bryan H; Holabird, Kevin S; Hazard, Thomas M; Huang, Biqin; Deelman, Peter W; Milosavljevic, Ivan; Schmitz, Adele E; Ross, Richard S; Gyure, Mark F; Hunter, Andrew T
2015-05-01
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186
Dirac electrons in graphene-based quantum wires and quantum dots
NASA Astrophysics Data System (ADS)
Peres, N. M. R.; Rodrigues, J. N. B.; Stauber, T.; Lopes dos Santos, J. M. B.
2009-08-01
In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots. We show that due to the formation of sub-bands in the ribbons it is possible to spatially localize some of the electronic modes using a p-n-p junction. We also show that scattering of confined Dirac electrons in a narrow channel by an infinitely massive wall induces mode mixing, giving a qualitative reason for the fact that an analytical solution to the spectrum of Dirac electrons confined in a square box has not yet been found. A first attempt to solve this problem is presented. We find that only the trivial case k = 0 has a solution that does not require the existence of evanescent modes. We also study the spectrum of quantum dots of graphene in a perpendicular magnetic field. This problem is studied in the Dirac approximation, and its solution requires a numerical method whose details are given. The formation of Landau levels in the dot is discussed. The inclusion of the Coulomb interaction among the electrons is considered at the self-consistent Hartree level, taking into account the interaction with an image charge density necessary to keep the back-gate electrode at zero potential. The effect of a radial confining potential is discussed. The density of states of circular and hexagonal quantum dots, described by the full tight-binding model, is studied using the Lanczos algorithm. This is necessary to access the detailed shape of the density of states close to the Dirac point when one studies large systems. Our study reveals that zero-energy edge states are also present in graphene quantum dots. Our results are relevant for experimental research in graphene nanostructures. The style of writing is pedagogical, in the hope that newcomers to the subject will find this paper a good starting point for their research.
Optical properties of dielectric thin films including quantum dots
NASA Astrophysics Data System (ADS)
Flory, F.; Chen, Y. J.; Lee, C. C.; Escoubas, L.; Simon, J. J.; Torchio, P.; Le Rouzo, J.; Vedraine, S.; Derbal-Habak, Hassina; Ackermann, Jorg; Shupyk, Ivan; Didane, Yahia
2010-08-01
Depending on the minimum size of their micro/nano structure, thin films can exhibit very different behaviors and optical properties. From optical waveguides down to artificial anisotropy, through diffractive optics and photonic crystals, the application changes when decreasing the minimum feature size. Rigorous electromagnetic theory can be used to model most of the components but when the size is of a few nanometers, quantum theory has also to be used. These materials including quantum structures are of particular interest for other applications, in particular for solar cells, because of their luminescent and electronic properties. We show that the properties of electrons in multiple quantum wells can be easily modeled with a formalism similar to that used for multilayer waveguides. The effects of different parameters, in particular coupling between wells and well thickness dispersion, on possible discrete energy levels or energy band of electrons and on electron wave functions is given. When such quantum confinement appears the spectral absorption and the extinction coefficient dispersion with wavelength is modified. The dispersion of the real part of the refractive index can then be deduced from the Kramers- Krönig relations. Associated with homogenization theory this approach gives a new model of refractive index for thin films including quantum dots. Absorption spectra of samples composed of ZnO quantum dots in PMMA layers are in preparation are given.
Electron transport through a quantum dot assisted by cavity photons
NASA Astrophysics Data System (ADS)
Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2013-11-01
We investigate transient transport of electrons through a single quantum dot controlled by a plunger gate. The dot is embedded in a finite wire with length Lx assumed to lie along the x-direction with a parabolic confinement in the y-direction. The quantum wire, originally with hard-wall confinement at its ends, ±Lx/2, is weakly coupled at t = 0 to left and right leads acting as external electron reservoirs. The central system, the dot and the finite wire, is strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger-gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an x-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to undergo coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a y-polarized photon field due to the anisotropy of our system caused by its geometry.
Electron transport through a quantum dot assisted by cavity photons.
Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2013-11-20
We investigate transient transport of electrons through a single quantum dot controlled by a plunger gate. The dot is embedded in a finite wire with length Lx assumed to lie along the x-direction with a parabolic confinement in the y-direction. The quantum wire, originally with hard-wall confinement at its ends, ±Lx/2, is weakly coupled at t = 0 to left and right leads acting as external electron reservoirs. The central system, the dot and the finite wire, is strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger-gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an x-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to undergo coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a y-polarized photon field due to the anisotropy of our system caused by its geometry. PMID:24132041
Kondo effect in triple quantum dots
NASA Astrophysics Data System (ADS)
Žitko, R.; Bonča, J.; Ramšak, A.; Rejec, T.
2006-04-01
Numerical analysis of the simplest odd-numbered system of coupled quantum dots reveals an interplay between magnetic ordering, charge fluctuations, and the tendency of itinerant electrons in the leads to screen magnetic moments. The transition from local-moment to molecular-orbital behavior is visible in the evolution of correlation functions as the interdot coupling is increased. Resulting Kondo phases are presented in a phase diagram which can be sampled by measuring the zero-bias conductance. We discuss the origin of the even-odd effects by comparing with the double quantum dot.
Ambipolar quantum dots in intrinsic silicon
Betz, A. C. Gonzalez-Zalba, M. F.; Podd, G.; Ferguson, A. J.
2014-10-13
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
Bilayer graphene quantum dot defined by topgates
Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.
2014-06-21
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
Charge transport in semiconductor nanocrystal quantum dots
NASA Astrophysics Data System (ADS)
Mentzel, Tamar Shoshana
In this thesis, we study charge transport in arrays of semiconductor nanocrystal quantum dots. Nanocrystals are synthesized in solution, and an organic ligand on the surface of the nanocrystal creates a potential barrier that confines charges in the nanocrystal. Optical absorption measurements reveal discrete electronic energy levels in the nanocrystals resulting from quantum confinement. When nanocrystals are deposited on a surface, they self-assemble into a close-packed array forming a nanocrystal solid. We report electrical transport measurements of a PbSe nanocrystal solid that serves as the channel of an inverted field-effect transistor. We measure the conductance as a function of temperature, source-drain bias and. gate voltage. The data indicates that holes are the majority carriers; the Fermi energy lies in impurity states in the bandgap of the nanocrystal; and charges hop between the highest occupied valence state in the nanocrystals (the 1S h states). At low source-drain voltages, the activation energy for hopping is given by the energy required to generate holes in the 1Sh state plus activation over barriers resulting from site disorder. The barriers from site disorder are eliminated with a sufficiently high source-drain bias. From the gate effect, we extract the Thomas-Fermi screening length and a density of states that is consistent with the estimated value. We consider variable-range hopping as an alternative model, and find no self-consistent evidence for it. Next, we employ charge sensing as an alternative to current measurements for studying transport in materials with localized sites. A narrow-channel MOSFET serves as a charge sensor because its conductance is sensitive to potential fluctuations in the nearby environment caused by the motion of charge. In particular, it is sensitive to the fluctuation of single electrons at the silicon-oxide interface within the MOSFET. We pattern a strip of amorphous germanium within 100 nm of the transistor. The
Quantum Optical Signature of Plasmonically Coupled Nanocrystal Quantum Dots.
Wang, Feng; Karan, Niladri S; Nguyen, Hue Minh; Mangum, Benjamin D; Ghosh, Yagnaseni; Sheehan, Chris J; Hollingsworth, Jennifer A; Htoon, Han
2015-10-01
Small clusters of two to three silica-coated nanocrystals coupled to plasmonic gap-bar antennas can exhibit photon antibunching, a characteristic of single quantum emitters. Through a detailed analysis of their photoluminescence emissions characteristics, it is shown that the observed photon antibunching is the evidence of coupled quantum dot formation resulting from the plasmonic enhancement of dipole-dipole interaction. PMID:26140499
Electronic quantum confinement in cylindrical potential well
NASA Astrophysics Data System (ADS)
Baltenkov, Arkadiy S.; Msezane, Alfred Z.
2016-04-01
The effects of quantum confinement on the momentum distribution of electrons confined within a cylindrical potential well have been analyzed. The motivation is to understand specific features of the momentum distribution of electrons when the electron behavior is completely controlled by the parameters of a non-isotropic potential cavity. It is shown that studying the solutions of the wave equation for an electron confined in a cylindrical potential well offers the possibility to analyze the confinement behavior of an electron executing one- or two-dimensional motion in the three-dimensional space within the framework of the same mathematical model. Some low-lying electronic states with different symmetries have been considered and the corresponding wave functions have been calculated; the behavior of their nodes and their peak positions with respect to the parameters of the cylindrical well has been analyzed. Additionally, the momentum distributions of electrons in these states have been calculated. The limiting cases of the ratio of the cylinder length H and its radius R0 have been considered; when the cylinder length H significantly exceeds its radius R0 and when the cylinder radius is much greater than its length. The cylindrical quantum confinement effects on the momentum distribution of electrons in these potential wells have been analyzed. The possible application of the results obtained here for the description of the general features in the behavior of electrons in nanowires with metallic type of conductivity (or nanotubes) and ultrathin epitaxial films (or graphene sheets) are discussed. Possible experiments are suggested where the quantum confinement can be manifested. Contribution to the Topical Issue "Atomic Cluster Collisions (7th International Symposium)", edited by Gerardo Delgado Barrio, Andrey Solov'Yov, Pablo Villarreal, Rita Prosmiti.
Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.
Subramania,Ganapathi Subramanian; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Passmore, Brandon Scott; El-Kady, Ihab Fathy; Shaner, Eric Arthur
2008-09-01
The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.
Size dependence in tunneling spectra of PbSe quantum-dot arrays.
Ou, Y C; Cheng, S F; Jian, W B
2009-07-15
Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored. PMID:19546498
Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Zhu, Haiming; Yang, Ye; Wu, Kaifeng; Lian, Tianquan
2016-05-01
Understanding photoinduced charge transfer from nanomaterials is essential to the many applications of these materials. This review summarizes recent progress in understanding charge transfer from quantum dots (QDs), an ideal model system for investigating fundamental charge transfer properties of low-dimensional quantum-confined nanomaterials. We first discuss charge transfer from QDs to weakly coupled acceptors within the framework of Marcus nonadiabatic electron transfer (ET) theory, focusing on the dependence of ET rates on reorganization energy, electronic coupling, and driving force. Because of the strong electron-hole interaction, we show that ET from QDs should be described by the Auger-assisted ET model, which is significantly different from ET between molecules or from bulk semiconductor electrodes. For strongly quantum-confined QDs on semiconductor surfaces, the coupling can fall within the strong coupling limit, in which case the donor-acceptor interaction and ET properties can be described by the Newns-Anderson model of chemisorption. We also briefly discuss recent progress in controlling charge transfer properties in quantum-confined nanoheterostructures through wavefunction engineering and multiple exciton dissociation. Finally, we identify a few key areas for further research.
Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots.
Zhu, Haiming; Yang, Ye; Wu, Kaifeng; Lian, Tianquan
2016-05-27
Understanding photoinduced charge transfer from nanomaterials is essential to the many applications of these materials. This review summarizes recent progress in understanding charge transfer from quantum dots (QDs), an ideal model system for investigating fundamental charge transfer properties of low-dimensional quantum-confined nanomaterials. We first discuss charge transfer from QDs to weakly coupled acceptors within the framework of Marcus nonadiabatic electron transfer (ET) theory, focusing on the dependence of ET rates on reorganization energy, electronic coupling, and driving force. Because of the strong electron-hole interaction, we show that ET from QDs should be described by the Auger-assisted ET model, which is significantly different from ET between molecules or from bulk semiconductor electrodes. For strongly quantum-confined QDs on semiconductor surfaces, the coupling can fall within the strong coupling limit, in which case the donor-acceptor interaction and ET properties can be described by the Newns-Anderson model of chemisorption. We also briefly discuss recent progress in controlling charge transfer properties in quantum-confined nanoheterostructures through wavefunction engineering and multiple exciton dissociation. Finally, we identify a few key areas for further research. PMID:27215815
Cavity quantum electrodynamics with carbon nanotube quantum dots
NASA Astrophysics Data System (ADS)
Kontos, Takis
Cavity quantum electrodynamics techniques have turned out to be instrumental to probe or manipulate the electronic states of nanoscale circuits. Recently, cavity QED architectures have been extended to quantum dot circuits. These circuits are appealing since other degrees of freedom than the traditional ones (e.g. those of superconducting circuits) can be investigated. I will show how one can use carbon nanotube based quantum dots in that context. In particular, I will focus on the coherent coupling of a single spin or non-local Cooper pairs to cavity photons. Quantum dots also exhibit a wide variety of many body phenomena. The cQED architecture could also be instrumental for understanding them. One of the most paradigmatic phenomenon is the Kondo effect which is at the heart of many electron correlation effects. I will show that a cQED architecture has allowed us to observe the decoupling of spin and charge excitations in a Kondo system.
Formation and ordering of epitaxial quantum dots
NASA Astrophysics Data System (ADS)
Atkinson, Paola; Schmidt, Oliver G.; Bremner, Stephen P.; Ritchie, David A.
2008-10-01
Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).
Low-energy trions in graphene quantum dots
NASA Astrophysics Data System (ADS)
Cheng, H.-C.; Lue, N.-Y.; Chen, Y.-C.; Wu, G. Y.
2014-06-01
We investigate, within the envelope function approximation, the low-energy states of trions in graphene quantum dots (QDs). The presence of valley pseudospin in graphene as an electron degree of freedom apart from spin adds convolution to the interplay between exchange symmetry and the electron-electron interaction in the trion, leading to new states of trions as well as a low-energy trion spectrum different from those in semiconductors. Due to the involvement of valley pseudospin, it is found that the low-energy spectrum is nearly degenerate and consists of states all characterized by having an antisymmetric (pseudospin) ⊗ (spin) component in the wave function, with the spin (pseudospin) part being either singlet (triplet) or triplet (singlet), as opposed to the spectrum in a semiconductor whose ground state is known to be nondegenerate and always a spin singlet in the case of X- trions. We investigate trions in the various regimes determined by the competition between quantum confinement and electron-electron interaction, both analytically and numerically. The numerical work is performed within a variational method accounting for electron mass discontinuity across the QD edge. The result for electron-hole correlation in the trion is presented. Effects of varying quantum dot size and confinement potential strength on the trion binding energy are discussed. The "relativistic effect" on the trion due to the unique relativistic type electron energy dispersion in graphene is also examined.
Silicon based quantum dot hybrid qubits
NASA Astrophysics Data System (ADS)
Kim, Dohun
2015-03-01
The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories
Pulsed-laser micropatterned quantum-dot array for white light source
NASA Astrophysics Data System (ADS)
Wang, Sheng-Wen; Lin, Huang-Yu; Lin, Chien-Chung; Kao, Tsung Sheng; Chen, Kuo-Ju; Han, Hau-Vei; Li, Jie-Ru; Lee, Po-Tsung; Chen, Huang-Ming; Hong, Ming-Hui; Kuo, Hao-Chung
2016-03-01
In this study, a novel photoluminescent quantum dots device with laser-processed microscale patterns has been demonstrated to be used as a white light emitting source. The pulsed laser ablation technique was employed to directly fabricate microscale square holes with nano-ripple structures onto the sapphire substrate of a flip-chip blue light-emitting diode, confining sprayed quantum dots into well-defined areas and eliminating the coffee ring effect. The electroluminescence characterizations showed that the white light emission from the developed photoluminescent quantum-dot light-emitting diode exhibits stable emission at different driving currents. With a flexibility of controlling the quantum dots proportions in the patterned square holes, our developed white-light emitting source not only can be employed in the display applications with color triangle enlarged by 47% compared with the NTSC standard, but also provide the great potential in future lighting industry with the correlated color temperature continuously changed in a wide range.
Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots
Beltran, AM; Ben, Teresa; Sales, David; Sanchez, AM; Ripalda, JM; Taboada, Alfonso G; Varela del Arco, Maria; Pennycook, Stephen J; Molina, S. I.
2011-01-01
We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.
Sized controlled synthesis, purification, and cell studies with silicon quantum dots.
Shiohara, Amane; Prabakar, Sujay; Faramus, Angelique; Hsu, Chia-Yen; Lai, Ping-Shan; Northcote, Peter T; Tilley, Richard D
2011-08-01
This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using (1)H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales. PMID:21727983
Reconfigurable visible quantum dot microlasers integrated on a silicon chip
NASA Astrophysics Data System (ADS)
Mehrabani, Simin; Hunt, Heather K.; Armani, Andrea M.
2012-02-01
Developing on-chip, dynamically reconfigurable visible lasers that can be integrated with additional optical and electronic components will enable adaptive optical components. In the present work, we demonstrate a reconfigurable quantum dot laser based on an integrated silica ultra high-Q microcavity. By attaching the quantum dot using a reversible, non-destructive bioconjugation process, the ability to remove and replace it with an alternative quantum dot without damaging the underlying microcavity device has been demonstrated. As a result of the absorption/emission characteristics of quantum dots, the same laser source can be used to excite quantum dots with distinct emission wavelengths.
Synthesis of CdSe quantum dots for quantum dot sensitized solar cell
Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.
2014-04-24
CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.
Electron transport and dephasing in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Huibers, Andrew Gerrit A.
At low temperatures, electrons in semiconductors can be phase coherent over distances exceeding tens of microns and are sufficiently monochromatic that a variety of interesting quantum interference phenomena can be observed and manipulated. This work discusses electron transport measurements through cavities (quantum dots) formed by laterally confining electrons in the two-dimensional sub-band of a GaAs/AlGaAs heterojunction. Metal gates fabricated using e-beam lithography enable fine control of the cavity shape as well as the leads which connect the dot cavity to source and drain reservoirs. Quantum dots can be modeled by treating the devices as chaotic scatterers. Predictions of this theoretical description are found to be in good quantitative agreement with experimental measurements of full conductance distributions at different temperatures. Weak localization, the suppression of conductance due to phase-coherent backscattering at zero magnetic field, is used to measure dephasing times in the system. Mechanisms responsible for dephasing, including electron-electron scattering and Nyquist phase relaxation, are investigated by studying the loss of phase coherence as a function of temperature. Coupling of external microwave fields to the device is also studied to shed light on the unexpected saturation of dephasing that is observed below an electron temperature of 100 mK. The effect of external fields in the present experiment is explained in terms of Joule heating from an ac bias.
New small quantum dots for neuroscience
NASA Astrophysics Data System (ADS)
Selvin, Paul
2014-03-01
In "New Small Quantum Dots for Neuroscience," Paul Selvin (University of Illinois, Urbana-Champaign) notes how the details of synapsis activity in the brain involves chemical receptors that facilitate the creation of the electrical connection between two nerves. In order to understand the details of this neuroscience phenomenon you need to be able to "see" what is happening at the scale of these receptors, which is around 10 nanometers. This is smaller than the diffraction limit of normal microscopy and it takes place on a 3 dimensional structure. Selvin describes the development of small quantum dots (on the order of 6-9 microns) that are surface-sensitized to interact with the receptors. This allows the application of photo-activated localized microscopy (PALM), a superresolution microscopy that can be scanned through focus to develop a 3D map on a scale that is the same size as the emitter, which in this case are the small quantum dots. The quantum dots are stable in time and provide access to the receptors which allows the imaging of the interactions taking place at the synoptic level.
Nanocomposites of POC and quantum dots
NASA Astrophysics Data System (ADS)
Borriello, C.; Concilio, S.; Minarini, C.; Iannelli, P.; Di Luccio, T.
2012-07-01
New luminescent polymer nanocomposites were synthesized combining carbazole/oxadiazole copolymer (POC) and CdSe/ZnS quantum dots (QDs) surface passivated by ionic liquids. Ionic liquid ligands improve the photostability of QDs and their compatibility with polymer allowing the deposition of homogeneous nanocomposites films. The nanocomposites were characterized by UV and photoluminescence spectroscopy.
Producing Quantum Dots by Spray Pyrolysis
NASA Technical Reports Server (NTRS)
Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius
2006-01-01
An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.
Quantum-dot infrared photodetectors: a review
NASA Astrophysics Data System (ADS)
Stiff-Roberts, Adrienne D.
2009-04-01
Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (>=150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep
2013-01-28
We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.
Single-dot optical emission from ultralow density well-isolated InP quantum dots
Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.
2008-10-06
We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.
Sized controlled synthesis, purification, and cell studies with silicon quantum dots
NASA Astrophysics Data System (ADS)
Shiohara, Amane; Prabakar, Sujay; Faramus, Angelique; Hsu, Chia-Yen; Lai, Ping-Shan; Northcote, Peter T.; Tilley, Richard D.
2011-08-01
This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales.This article describes the size control synthesis of silicon quantum dots with simple microemulsion techniques. The silicon nanocrystals are small enough to be in the strong confinement regime and photoluminesce in the blue region of the visible spectrum and the emission can be tuned by changing the nanocrystal size. The silicon quantum dots were capped with allylamine either a platinum catalyst or UV-radiation. An extensive purification protocol is reported and assessed using 1H NMR to produce ultra pure silicon quantum dots suitable for biological studies. The highly pure quantum dots were used in cellular uptake experiments and monitored using confocal microscopy. The results showed that the amine terminated silicon nanocrystals accumulated in lysosome but not in nuclei and could be used as bio-markers to monitor cancer cells over long timescales. Electronic supplementary information (ESI) available. See DOI: 10.1039/c1nr10458f
Optical properties of quantum-dot-doped liquid scintillators
Aberle, C.; Li, J.J.; Weiss, S.; Winslow, L.
2014-01-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO. PMID:25392711
Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells
Zaitsev, S. V. Welsch, M. K.; Forchel, A.; Bacher, G.
2007-11-15
Individual quantum dots are produced by selective interdiffusion between the barriers and the quantum well layer in a CdTe/CdMgTe heterostructure. The heterostructure, with a SiO{sub 2} mask preliminarily deposited onto the surface, was subjected to short-term annealing for 1 min at the temperature 410 deg. C. The mask contained open apertures with diameter up to 140 nm. The annealing induces diffusion of Mg atoms into the depth of the quantum well. Diffusion is substantially enhanced under the mask. The induced lateral potential, with minimums in the regions of apertures of the mask, stimulates efficient localization of charge carriers that form quasi-zero-dimensional excitons. The study of radiative recombination suggests complete spatial confinement of the excitons. The confinement manifests itself in the observation of a substantially narrowed line of excitonic transitions, as well as in the observation of biexcitons and excited states at high levels of photoexcitation. The characteristic energies of interlevel splitting and the biexciton binding energy show that charge carriers are under the condition of weak confinement in the quantum dots.
Progress and prospect of quantum dot lasers
NASA Astrophysics Data System (ADS)
Arakawa, Yasuhiko
2001-10-01
Optical properties and growth of self-assembled quantum dots (SAQDs) for optoelectronic device applications are discussed. After briefly reviewing the history of research on QD lasers, we discuss growth of InAs SQDs including the light emission at the wavelength of 1.52)mum with a narrow linewidth (22 meV) and the area-controlled growth which demonstrates formation of SAQDs in selected local areas on a growth plane using a SiO)-2) mask with MOCVD growth. Then properties of the InGaAs AQDs are investigated by the near- field photoluminescence excitation spectroscopy which reveals gradually increasing continuum absorption connected with the two-dimensional-like (2D-like) wetting layer, resulting in faster relaxation of electrons due to a crossover between OD and 2D character in the density of states. Moreover, we have investigated InGaN self-assembled QDs on a GaN layer achieving the average diameter as small as 8.4nm and a strong light at room temperature. A laser structure with the stacked InGAN QDs embedded in the active layer was fabricated and room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDs was examined using near-field $DAL- photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. Establishing AlGaN/GaN DBR of high quality, we succeeded in lasing action in InGaN blue light emitting VCSELs. Enhancement of spontaneous emission is demonstrated. Finally, perspective of QD lasers.
Non-Markovian full counting statistics in quantum dot molecules
Xue, Hai-Bin; Jiao, Hu-Jun; Liang, Jiu-Qing; Liu, Wu-Ming
2015-01-01
Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markovian full counting statistics in a quantum dot molecule. Here we study the non-Markovian full counting statistics in two typical quantum dot molecules, namely, serially coupled and side-coupled double quantum dots with high quantum coherence in a certain parameter regime. We demonstrate that the non-Markovian effect manifests itself through the quantum coherence of the quantum dot molecule system, and has a significant impact on the full counting statistics in the high quantum-coherent quantum dot molecule system, which depends on the coupling of the quantum dot molecule system with the source and drain electrodes. The results indicated that the influence of the non-Markovian effect on the full counting statistics of electron transport, which should be considered in a high quantum-coherent quantum dot molecule system, can provide a better understanding of electron transport through quantum dot molecules. PMID:25752245
Radiation Damage Resistance of Quantum Wells and Self-Assembled Quantum Dots
NASA Astrophysics Data System (ADS)
Schoenfeld, Winston V.; Chen, Ching-Hui; Petroff, Pierre M.; Hu, Evelyn L.
1998-03-01
The growth of self-assembled InAs quantum dots (QDs) has recently allowed for new devices which could exploit their zero dimensional quantum confinement and delta function density of states( G.Medeiros-Ribeiro,F.G.Pikus,P.M.Petroff,A.L.Efros, Phys. Rev. B55, 3, 1568 (1997).). The luminescence efficiency of a pseudomorphic In_xGa_1-xAs (x=0.2) QW and a QDs layer after exposure to an Ar^+ (E = 400 eV) plasma was studied for doses up to 10^15 cm-2. Photoluminescence spectroscopy was preformed using both an Ar^+ and a Ti-sapphire laser, allowing for both resonant and non-resonant pumping of the QW or QDs. The data shows that QDs have a greater radiation resistance relative to QWs by a factor of 8. This is attributed to zero dimensional quantum confinement and exciton localization in QDs.
Efficient Luminescence from Perovskite Quantum Dot Solids.
Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F; Sargent, Edward H
2015-11-18
Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids. PMID:26529572
Energy spectrum of D{sup 0} centre in a spherical Gaussian quantum dot
Boda, Aalu Chatterjee, Ashok
2015-05-15
The properties of a neutral hydrogenic donor (D{sup 0}) centres have been studied for a GaAs semiconductor quantum dot with the Gaussian confinement potential. The energy levels of the ground state (n = 1) and the excited states of both the first excited (n = 2) and second excited (n = 3) configurations have been calculated by variational method. It has been shown that the excited states of the (D{sup 0}) centre in quantum dot are bound for sufficiently strong confinement potential. The conditions of binding for the ground state as well as excited states have been determined as functions of the potential strength and quantum dot radius. The ground state electron energy is compared with those available in the literature.
Quantum dot circuits: Single-electron switch and few-electron quantum dots
NASA Astrophysics Data System (ADS)
Chan, Ian Hin-Yun
A strongly capacitively-coupled parallel double quantum dot was studied as a single-electron switch. The double dot was fabricated in a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. An electrically-floating coupling gate increased capacitive-coupling between the dots, while an etched trench prevented tunnel-coupling between them. Split Coulomb blockade peaks were observed in each dot, and the Coulomb blockade conductance of the double dot formed a hexagonal pattern characteristic of coupled dots. A fractional peak splitting f = 0.34 was measured, which corresponds to a fractional capacitive-coupling alpha ≡ CINT/CSigma = 0.20. This is an order of magnitude larger than reported for similar lateral quantum dots, and shows that the coupling gate works. The strong capacitive-coupling in our device allowed the charge state of one dot to strongly influence the conductance of the other dot and enabled it to work as a single-electron switch. By moving in a combination of gate voltages, electrons are induced in one dot (the "trigger" dot) only. In response to the change in the charge state, the conductance of the other dot (the "switched" dot) is turned on and off. The abruptness of the conductance switching in gate voltage (the switching lineshape) is determined by how well charge is quantized on the trigger dot, and was found to follow tanh and arctan forms for (respectively) good and poor charge quantization in the trigger dot. A few-electron tunnel-coupled series double dot was studied for possible application to quantum computing. The device was fabricated in a square-well 2DEG in a GaAs/AlGaAs heterostructure. The dots were emptied of electrons in order to define the absolute number of electrons in the dot. Finite bias Coulomb blockade measurements on each dot showed that the last Coulomb blockade diamonds did not close and thus that both dots could be emptied. A three-dimensional conductance measurement of one dot in the one sidegate and the
Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots
Chang, Y. C.; Robson, A. J.; Harrison, S.; Zhuang, Q. D.; Hayne, M.
2015-06-15
We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
NASA Astrophysics Data System (ADS)
Avazzadeh, Z.; Bahramiyan, H.; Khordad, R.; Mohammadi, S. A.
2016-04-01
In this study, the diamagnetic susceptibility of an off-center hydrogenic donor impurity confined by pyramid and cone-like quantum dots has been investigated. To this end, the finite-element method and the Arnoldi algorithm are used to find energy eigenvalues and eigenvectors of the systems. Then, the effect of impurity position and dot size has been investigated on the diamagnetic susceptibility. We have found that the diamagnetic susceptibility has a maximum around the impurity position 4nm for two quantum dots. The diamagnetic susceptibility in the cone-like quantum dot is smaller than that in the pyramid quantum dot. Numerical studies reveal that the diamagnetic susceptibility depends strongly on the geometry of the dot.
Electron spin coherence near room temperature in magnetic quantum dots
Moro, Fabrizio; Turyanska, Lyudmila; Wilman, James; Fielding, Alistair J.; Fay, Michael W.; Granwehr, Josef; Patanè, Amalia
2015-01-01
We report on an example of confined magnetic ions with long spin coherence near room temperature. This was achieved by confining single Mn2+ spins in colloidal semiconductor quantum dots (QDs) and by dispersing the QDs in a proton-spin free matrix. The controlled suppression of Mn–Mn interactions and minimization of Mn–nuclear spin dipolar interactions result in unprecedentedly long phase memory (TM ~ 8 μs) and spin–lattice relaxation (T1 ~ 10 ms) time constants for Mn2+ ions at T = 4.5 K, and in electron spin coherence observable near room temperature (TM ~ 1 μs). PMID:26040432
Fluorescence from Individual PbS Quantum Dots
NASA Astrophysics Data System (ADS)
Peterson, Jeffrey
2005-03-01
Due to their extremely large electron, hole, and exciton Bohr radii, PbS quantum dots (QDs) can achieve levels of quantum confinement not accessible to III-V and II-VI QDs. Thus, the strong confinement regime is attained for relatively large particles, which may mitigate deleterious surface effects and impart novel properties. PbS QDs are also optically active in the near-infrared region, making these materials potentially useful for telecommunications and biotechnological applications. We will present investigations of single PbS QD fluorescence using far-field microscopy. PbS QDs were synthesized with a size-tunable exciton absorbance ranging between 765 nm and 1800 nm. Of particular note is the ability to synthesize highly luminescent, small radii QDs, allowing for fluorescence detection with high sensitivity silicon CCDs. Upon spincoating QDs onto glass substrates at densities near the single dot level, we observe fluorescence intermittency, or “blinking” and a narrowing of the fluorescence spectra relative to the ensemble, both hallmarks of single fluorophores. The fluorescence energy irreversibly blue shifts with longer integration times and higher excitation intensities, indicative of a photo-induced degradation. Photobleaching of the majority of PbS QDs occurred in 30 sec. An analysis of the blinking statistics will be discussed.
Inverse parabolic quantum dot: The transition energy under magnetic field effect
NASA Astrophysics Data System (ADS)
Safwan, S. A.; El Meshed, Nagwa
2016-08-01
We present here, the evolution of the transition energy with a static magnetic field, when the electron and the hole are confined in inverse parabolic quantum dot (IPQD). The unexpected behavior is found, at the weak confinement regime the conduction band minimum and the top of valance band change from s-state to p-state or d-state for confined electron and hole inside IPQD, respectively. The strength of the inverse parabolic potential (potential hump) inside a quantum dot has the upper hand in tuning the ground state momentum for both electron and hole, and consequently their interband transition energy is changed. Knowing that this is not the case for the other types of potentials. The quantum size, the magnetic field and inverse potential hump effects on electron and hole ground and excited states are discussed.
Quantum Computation Using Optically Coupled Quantum Dot Arrays
NASA Technical Reports Server (NTRS)
Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)
1998-01-01
A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.
Semiconductor quantum dot scintillation under gamma-ray irradiation
Letant, S E; Wang, T
2006-08-23
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting
(e,3e) process on a quantum dot
Srivastava, M.K.
2004-12-01
The exact initial state wave function of an interacting electron pair in a quantum dot under parabolic confinement and neutralization of the dot by the substrate after ejection of electrons is exploited to obtain the fivefold differential cross section (X) of the (e,3e) process on the dot. The reflections of the center-of-mass (c.m.) motion and relative motion on X are decoupled if the incident and scattered electrons are energetic and the ejected electrons are slow. The results are studied in fixed mutual angle (with zero c.m. momentum K) and Bethe ridge modes which allow the 'cleanest' analysis of the contribution of the relative motion. The Coulomb interaction between the emitted electrons is found to qualitatively change the angular distribution of X. In the mode in which the magnitude of K is equal to the momentum transfer q, the angular distribution of X with respect to {theta}{sub Kq}=cos{sup -1}(K{center_dot}q) leads to a mapping of the initial c.m. wave function of the ejected pair. However, the c.m. motion is found to be best studied in the kinematics where the relative momentum k-vector of the ejected pair is equal to q-vector.
Rauf Abdullah, Nzar; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2016-09-21
We investigate theoretically the balance of the static magnetic and the dynamical photon forces in the electron transport through a quantum dot in a photon cavity with a single photon mode. The quantum dot system is connected to external leads and the total system is exposed to a static perpendicular magnetic field. We explore the transport characteristics through the system by tuning the ratio, [Formula: see text], between the photon energy, [Formula: see text], and the cyclotron energy, [Formula: see text]. Enhancement in the electron transport with increasing electron-photon coupling is observed when [Formula: see text]. In this case the photon field dominates and stretches the electron charge distribution in the quantum dot, extending it towards the contact area for the leads. Suppression in the electron transport is found when [Formula: see text], as the external magnetic field causes circular confinement of the charge density around the dot. PMID:27420809
Magnetoexcitons in type-II semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Fuster, Gonzalo; Barticevic, Zdenka; Pacheco, Monica; Oliveira, Luiz E.
2004-03-01
We present a theoretical investigation of excitons in type-II semiconductor quantum dots (QD). In these systems the confinement of electrons inside the QD and the hole outside the QD produces a ring-like structure [1-2]. Recently, Ribeiro et al [3], in a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, observed Aharonov-Bohm-type oscillations characteristic of the ring topology for neutral excitons. Using a simple model they have derived the groundstate hole energy as a function of the magnetic field, and obtained values for the ring parameters which are in good agreement with the measured values. However, some of the features observed experimentally, in the photoluminescence intensity, can not be well explained under that approach. In this work we present a more realistic model which considers the finite width of the ring and the electron-hole interaction included via a perturbative approach. The calculations are performed within the oneparticle formalism using the effective mass approximation. The confinement potential for electrons is modelled as the superposition of a quantum well potential along the axial direction, and a parabolic lateral confinement potential. The energies for the hole in the ring plane are calculated using the method of reference [4]. Theoretical calculations are in good agreement with the experimental results of reference [3] provided that excitonic effects are properly taken into account. References 1. A.O. Govorov et al., Physica E 13 , 297 (2002). 2. K. L. Janssens et al. Phys. Rev B64, 155324 (2001), and Phys. Rev. B66, 075314 (2002). 3. E. Ribeiro, G. Medeiros-Ribeiro, and W.Carvalho Jr., and A.O. Govorov, condmat/0304092 (2003). 4. Z. Barticevic, G. Fuster, and M. Pacheco,Phys. Rev. B 65, 193307 (2002).
Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V
2015-02-13
We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells. PMID:25605224
Quantum-dot-induced phase shift in a pillar microcavity
Young, A. B.; Hu, C. Y.; Rarity, J. G.; Oulton, R.; Thijssen, A. C. T.; Schneider, C.; Reitzenstein, S.; Kamp, M.; Hoefling, S.; Worschech, L.; Forchel, A.
2011-07-15
We perform high-resolution reflection spectroscopy of a quantum dot resonantly coupled to a pillar microcavity. We show the change in reflectivity as the quantum dot is tuned through the cavity resonance and measure the quantum-dot-induced phase shift using an ultrastable interferometer. The macroscopic phase shift we measure could be extended to the study of charged quantum dot pillar microcavity systems, where it could be exploited to realize a high-efficiency spin photon interface for hybrid quantum information schemes.
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
NASA Astrophysics Data System (ADS)
Betz, A. C.; Tagliaferri, M. L. V.; Vinet, M.; Broström, M.; Sanquer, M.; Ferguson, A. J.; Gonzalez-Zalba, M. F.
2016-05-01
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
A Surface Chemistry Approach to Enhancing Colloidal Quantum Dot Solids for Photovoltaics
NASA Astrophysics Data System (ADS)
Carey, Graham Hamilton
Colloidal quantum dot (CQD) photovoltaic devices have improved rapidly over the past decade of research. By taking advantage of the quantum confinement effect, solar cells constructed using films of infrared-bandgap nanoparticles are able to capture previously untapped ranges of the solar energy spectrum. Additionally, films are fabricated using simple, cheap, reproducible solution processing techniques, enabling the creation of low-cost, flexible photovoltaic devices. A key factor limiting the creation of high efficiency CQD solar cells is the short charge carrier diffusion length in films. Driven by a combination of limited carrier mobility, poor nanoparticle surface passivation, and the presence of unexamined electrically active impurities throughout the film, the poor diffusion length limits the active layer thickness in CQD solar cells, leading to lower-than-desired light absorption, and curtailing the photocurrent generated by such devices. This thesis seeks to address poor diffusion length by addressing each of the limiting factors in turn. Electrical transport in quantum dot solids is examined in the context of improved quantum dot packing; methods are developed to improve packing by using actively densifying components, or by dramatically lowering the volume change required between quantum dots in solution and in solid state. Quantum dot surface passivation is improved by introducing a crucial secondary, small halide ligand source, and by surveying the impact of the processing environment on the final quality of the quantum dot surface. A heretofore unidentified impurity present in quantum dot solids is identified, characterized, and chemically eliminated. Finally, lessons learned through these experiments are combined into a single, novel materials system, leading to quantum dot devices with a significantly improved diffusion length (enhanced from 70 to 230 nm). This enabled thick, high current density (30 mA cm -2, compared to typical values in the 20
Confinement of Fractional Quantum Hall States
NASA Astrophysics Data System (ADS)
Willett, Robert; Manfra, Michael; West, Ken; Pfeiffer, Loren
2008-03-01
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow channels in high density, ultra-high mobility heterostructures. Transport evidence for the persistence of a correlated state at filling fraction 5/3 is shown in channels of 2μm length but gated to near 0.3μm in width. The methods employed to achieve this confinement hold promise for interference devices proposed for studying potential non-Abelian statistics at filling fraction 5/2. R.L. Willett, M.J. Manfra, L.N. Pfeiffer, K.W. West, Appl. Phys. Lett. 91, 052105 (2007).
Charge transport in strongly coupled quantum dot solids
NASA Astrophysics Data System (ADS)
Kagan, Cherie R.; Murray, Christopher B.
2015-12-01
The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.
Longitudinal wave function control in single quantum dots with an applied magnetic field
Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai
2015-01-01
Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018
Small bright charged colloidal quantum dots.
Qin, Wei; Liu, Heng; Guyot-Sionnest, Philippe
2014-01-28
Using electrochemical charge injection, the fluorescence lifetimes of negatively charged core/shell CdTe/CdSe QDs are measured as a function of core size and shell thickness. It is found that the ensemble negative trion lifetimes reach a maximum (∼4.5 ns) for an intermediate shell thickness. This leads to the smallest particles (∼4.5 nm) with the brightest trion to date. Single dot measurements show that the negative charge suppresses blinking and that the trion can be as bright as the exciton at room temperature. In contrast, the biexciton lifetimes remain short and exhibit only a monotonous increase with shell thickness, showing no correlation with the negative trion decays. The suppression of the Auger process in small negatively charged CdTe/CdSe quantum dots is unprecedented and a significant departure from prior results with ultrathick CdSe/CdS core/shell or dot-in-rod structures. The proposed reason for the optimum shell thickness is that the electron-hole overlap is restricted to the CdTe core while the electron is tuned to have zero kinetic energy in the core for that optimum shell thickness. The different trend of the biexciton lifetime is not explained but tentatively attributed to shorter-lived positive trions at smaller sizes. These results improve our understanding of multiexciton recombination in colloidal quantum dots and may lead to the design of bright charged QDs for more efficient light-emitting devices. PMID:24350673
Conductance Peaks in Open Quantum Dots
NASA Astrophysics Data System (ADS)
Ramos, J. G. G. S.; Bazeia, D.; Hussein, M. S.; Lewenkopf, C. H.
2011-10-01
We present a simple measure of the conductance fluctuations in open ballistic chaotic quantum dots, extending the number of maxima method originally proposed for the statistical analysis of compound nuclear reactions. The average number of extreme points (maxima and minima) in the dimensionless conductance T as a function of an arbitrary external parameter Z is directly related to the autocorrelation function of T(Z). The parameter Z can be associated with an applied gate voltage causing shape deformation in quantum dot, an external magnetic field, the Fermi energy, etc. The average density of maxima is found to be ⟨ρZ⟩=αZ/Zc, where αZ is a universal constant and Zc is the conductance autocorrelation length, which is system specific. The analysis of ⟨ρZ⟩ does not require large statistic samples, providing a quite amenable way to access information about parametric correlations, such as Zc.
Quantum dot/glycol chitosan fluorescent nanoconjugates
NASA Astrophysics Data System (ADS)
Mansur, Alexandra AP; Mansur, Herman S.
2015-04-01
In this study, novel carbohydrate-based nanoconjugates combining chemically modified chitosan with semiconductor quantum dots (QDs) were designed and synthesised via single-step aqueous route at room temperature. Glycol chitosan (G-CHI) was used as the capping ligand aiming to improve the water solubility of the nanoconjugates to produce stable and biocompatible colloidal systems. UV-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and Fourier transform infrared (FTIR) spectroscopy were used to characterise the synthesis and the relative stability of biopolymer-capped semiconductor nanocrystals. The results clearly demonstrated that the glycol chitosan derivative was remarkably effective at nucleating and stabilising semiconductor CdS quantum dots in aqueous suspensions under acidic, neutral, and alkaline media with an average size of approximately 2.5 nm and a fluorescent activity in the visible range of the spectra.
Magnetoconductance fluctuations in open bismuth quantum dots
NASA Astrophysics Data System (ADS)
Hackens, B.; Minet, J. P.; Farhi, G.; Crahay, A.; Faniel, S.; Gustin, C.; Bayot, V.
2002-03-01
We investigate the low temperature (300 mK - 10 K) magnetoconductance of open circular bismuth quantum dots (diameter: 500 nm). The structures are fabricated using a combination of electron beam lithography, lift off and plasma etching techniques on bismuth thin films evaporated on heated SiO2 substrates. We observe reproducible magnetoconductance fluctuations (UCFs) up to 5T, qualitatively similar to conductance fluctuations evidenced in open quantum dots patterned in high mobility semiconductor heterostructures. In our samples, UCFs are superposed on a slowly varying negative magnetoconductance background. We also observe a sharp conductance maximum centered in B=0, which is reminescent of the spin-orbit induced anti-localisation phenomenon. The behavior of UCFs and of the conductance maximum is discussed as a function of the temperature, thickness and degree of cristallinity of the cavity.
Scanning photoluminescent spectroscopy of bioconjugated quantum dots
NASA Astrophysics Data System (ADS)
Chornokur, G.; Ostapenko, S.; Oleynik, E.; Phelan, C.; Korsunska, N.; Kryshtab, T.; Zhang, J.; Wolcott, A.; Sellers, T.
2009-04-01
We report on the application of the bio-conjugated quantum dots (QDs) for a "sandwich" enzyme-linked immunosorbent assay (ELISA) cancer testing technique. Quantum dot ELISA detection of the cancer PSA antigen at concentrations as low as 0.01 ng/ml which is ˜50 times lower than the classic "sandwich" ELISA was demonstrated. Scanning photoluminescence (PL) spectroscopy was performed on dried ELISA wells and the results compared with the same QD samples dried on a solid substrate. We confirmed a "blue" up to 37 nm PL spectral shift in a case of QDs conjugated to PSA antibodies. Increasing of the "blue" spectral shift was observed at lower PSA antigen concentrations. The results can be used to improve sensitivity of "sandwich" ELISA cancer antigen detection.
Protease-activated quantum dot probes
NASA Astrophysics Data System (ADS)
Chang, Emmanuel; Sun, Jiantang; Miller, Jordan S.; Yu, William W.; Colvin, Vicki L.; West, Jennifer L.; Drezek, Rebekah
2006-04-01
We demonstrate a novel quantum dot based probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This probe may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically-degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Peptide cleavage results in release of AuNPs and restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 hours of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker.
Separability and dynamical symmetry of Quantum Dots
Zhang, P.-M.; Zou, L.-P.; Horvathy, P.A.; Gibbons, G.W.
2014-02-15
The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.
Optical pumping of a single hole spin in a quantum dot
NASA Astrophysics Data System (ADS)
Gerardot, Brian D.; Brunner, Daniel; Dalgarno, Paul A.; Öhberg, Patrik; Seidl, Stefan; Kroner, Martin; Karrai, Khaled; Stoltz, Nick G.; Petroff, Pierre M.; Warburton, Richard J.
2008-01-01
The spin of an electron is a natural two-level system for realizing a quantum bit in the solid state. For an electron trapped in a semiconductor quantum dot, strong quantum confinement highly suppresses the detrimental effect of phonon-related spin relaxation. However, this advantage is offset by the hyperfine interaction between the electron spin and the 104 to 106 spins of the host nuclei in the quantum dot. Random fluctuations in the nuclear spin ensemble lead to fast spin decoherence in about ten nanoseconds. Spin-echo techniques have been used to mitigate the hyperfine interaction, but completely cancelling the effect is more attractive. In principle, polarizing all the nuclear spins can achieve this but is very difficult to realize in practice. Exploring materials with zero-spin nuclei is another option, and carbon nanotubes, graphene quantum dots and silicon have been proposed. An alternative is to use a semiconductor hole. Unlike an electron, a valence hole in a quantum dot has an atomic p orbital which conveniently goes to zero at the location of all the nuclei, massively suppressing the interaction with the nuclear spins. Furthermore, in a quantum dot with strong strain and strong quantization, the heavy hole with spin-3/2 behaves as a spin-1/2 system and spin decoherence mechanisms are weak. We demonstrate here high fidelity (about 99 per cent) initialization of a single hole spin confined to a self-assembled quantum dot by optical pumping. Our scheme works even at zero magnetic field, demonstrating a negligible hole spin hyperfine interaction. We determine a hole spin relaxation time at low field of about one millisecond. These results suggest a route to the realization of solid-state quantum networks that can intra-convert the spin state with the polarization of a photon.
Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles
NASA Astrophysics Data System (ADS)
Semina, M. A.; Golovatenko, A. A.; Rodina, A. V.
2016-01-01
We report on a theoretical study of the hole states in II-IV quantum dots of spherical and ellipsoidal shapes, described by smooth potential confinement profiles that can be modeled by Gaussian functions in all three dimensions. The universal dependencies of the hole energy, g factor, and localization length on the quantum dot barrier height, as well as the ratio of effective masses of the light and heavy holes are presented for the spherical quantum dots. The splitting of the fourfold degenerate ground state into two doublets is derived for anisotropic (oblate or prolate) quantum dots. Variational calculations are combined with numerical ones in the framework of the Luttinger Hamiltonian. Constructed trial functions are optimized by comparison with the numerical results. The effective hole g factor is found to be independent of the quantum dot size and barrier height and is approximated by a simple universal expression depending only on the effective mass parameters. The results can be used for interpreting and analyzing experimental spectra measured in various structures with quantum dots of different semiconductor materials.
Electrical properties of semiconductor quantum dots
Kharlamov, V. F. Korostelev, D. A.; Bogoraz, I. G.; Milovidova, O. A.; Sergeyev, V. O.
2013-04-15
A method, which makes it possible to obtain semiconductor particles V Almost-Equal-To 10{sup -20} cm{sup 3} in volume (quantum dots) with a concentration of up to 10{sup 11} cm{sup -2} and electrical contacts to each of them, is suggested. High variability in the electrical properties of such particles from a metal oxide (CuO or NiO) after the chemisorption of gas molecules is found.
Inverted colloidal quantum dot solar cells.
Kim, Gi-Hwan; Walker, Bright; Kim, Hak-Beom; Kim, Jin Young; Sargent, Edward H; Park, Jongnam; Kim, Jin Young
2014-05-28
An inverted architecture of quantum dot solar cells is demonstrated by introducing a novel ZnO method on top of the PbS CQD film. Improvements in device characteristics stem from constructive optical interference from the ZnO layer that enhances absorption in the PbS CQD layer. Outstanding diode characteristics arising from a superior PbS/ZnO junction provide a further electronic advantage. PMID:24677118
Wei, Hai-Rui; Deng, Fu-Guo
2013-07-29
We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes. PMID:23938640
Relaxation dynamics in correlated quantum dots
Andergassen, S.; Schuricht, D.; Pletyukhov, M.; Schoeller, H.
2014-12-04
We study quantum many-body effects on the real-time evolution of the current through quantum dots. By using a non-equilibrium renormalization group approach, we provide analytic results for the relaxation dynamics into the stationary state and identify the microscopic cutoff scales that determine the transport rates. We find rich non-equilibrium physics induced by the interplay of the different energy scales. While the short-time limit is governed by universal dynamics, the long-time behavior features characteristic oscillations as well as an interplay of exponential and power-law decay.
Ultra-bright alkylated graphene quantum dots
NASA Astrophysics Data System (ADS)
Feng, Lan; Tang, Xing-Yan; Zhong, Yun-Xin; Liu, Yue-Wen; Song, Xue-Huan; Deng, Shun-Liu; Xie, Su-Yuan; Yan, Jia-Wei; Zheng, Lan-Sun
2014-10-01
Highly efficient and stable photoluminescence (PL) are urgently desired for graphene quantum dots (GQDs) to facilitate their prospective applications as optical materials. Here, we report the facile and straightforward synthesis of alkylated graphene quantum dots (AGQDs) via the solvothermal reaction of propagatively alkylated graphene sheets (PAGenes). In contrast to most GQDs reported so far, the synthesized AGQDs process pH-independent and ultra-bright PL with a relative quantum yield of up to 65%. Structural and chemical composition characterization demonstrated that the synthesized AGQDs are nearly oxygen-defect-free with alkyl groups decorated on edges and basal plane, which may contribute to their greatly improved pH tolerance and high quantum efficiency. The photocatalytic performance of AGQDs-P25 nanocomposites was evaluated by the degradation of Rhodamine B under visible light. The photocatalytic rate is ca. 5.9 times higher than that of pure P25, indicating that AGQDs could harness the visible spectrum of sunlight for energy conversion or environmental therapy.Highly efficient and stable photoluminescence (PL) are urgently desired for graphene quantum dots (GQDs) to facilitate their prospective applications as optical materials. Here, we report the facile and straightforward synthesis of alkylated graphene quantum dots (AGQDs) via the solvothermal reaction of propagatively alkylated graphene sheets (PAGenes). In contrast to most GQDs reported so far, the synthesized AGQDs process pH-independent and ultra-bright PL with a relative quantum yield of up to 65%. Structural and chemical composition characterization demonstrated that the synthesized AGQDs are nearly oxygen-defect-free with alkyl groups decorated on edges and basal plane, which may contribute to their greatly improved pH tolerance and high quantum efficiency. The photocatalytic performance of AGQDs-P25 nanocomposites was evaluated by the degradation of Rhodamine B under visible light. The
Saravanamoorthy, S. N.; Peter, A. John
2015-06-24
Binding energies of the exciton and the interband optical transition energies are studied in a CdSe/Pb{sub 1-x}Cd{sub x}Se/CdSe spherical quantum dot-quantum well nanostructure taking into account the geometrical confinement effect. The core and shell are taken as the same material. The initial and final states of energy and the overlap integrals of electron and hole wave functions are determined by the oscillator strength. The oscillator strength and the radiative transition life time with the dot radius are investigated for various Cd alloy content in the core and shell materials.
Effect of shells on photoluminescence of aqueous CdTe quantum dots
Yuan, Zhimin; Yang, Ping
2013-07-15
Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.
Quantum dot spectroscopy using a single phosphorus donor
NASA Astrophysics Data System (ADS)
Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.
2015-12-01
Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.
Epitaxial graphene quantum dots for high-performance terahertz bolometers
NASA Astrophysics Data System (ADS)
El Fatimy, Abdel; Myers-Ward, Rachael L.; Boyd, Anthony K.; Daniels, Kevin M.; Gaskill, D. Kurt; Barbara, Paola
2016-04-01
Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron–phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K‑1 below 6 K), leading to responsivities of 1 × 1010 V W‑1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (∼2 × 10‑16 W Hz‑1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.
Epitaxial graphene quantum dots for high-performance terahertz bolometers.
El Fatimy, Abdel; Myers-Ward, Rachael L; Boyd, Anthony K; Daniels, Kevin M; Gaskill, D Kurt; Barbara, Paola
2016-04-01
Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K(-1) below 6 K), leading to responsivities of 1 × 10(10) V W(-1), a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (∼2 × 10(-16) W Hz(-1/2) at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K. PMID:26727199
Few-electron physics in Double quantum dots in carbon nanotubes
NASA Astrophysics Data System (ADS)
von Stecher, Javier; Wunsch, Bernhard; Lukin, Mikahil; Demler, Eugene; Rey, Ana Maria
2010-03-01
Recent experimental progress on few-electron quantum dots (also known as artificial atoms) has allowed the controllable manipulation of the spin degrees of freedom of the confined electrons. Such control is at the heart of semiconductor-based spintronics and quantum-information proposals. Double-well quantum dot in semiconducting carbon nanotubes exhibit rich physics due to the additional valley degree of freedom. Here, we study the few-electron spectrum of a carbon-nanotube double quantum dot with spin-orbit coupling. We find that Coulomb interactions can cause strong correlation effects which lead to different ground state transitions. In particular, we show that such strong correlations can produce the disappearance of the Pauli blockade in transport experiments and an interaction-induced ferromagnetic ground state.
Ultrafast gain recovery and large nonlinear optical response in submonolayer quantum dots
NASA Astrophysics Data System (ADS)
Lingnau, Benjamin; Lüdge, Kathy; Herzog, Bastian; Kolarczik, Mirco; Kaptan, Yücel; Woggon, Ulrike; Owschimikow, Nina
2016-07-01
Submonolayer quantum dots combine the zero-dimensional charge-carrier confinement of self-assembled quantum dots with the large density of states of a quantum well. Electroluminescence and pump-probe experiments on a submonolayer-based optical amplifier show that the system exhibits a high gain of 90 cm-1 and an ultrafast gain recovery. We propose a rate equation system describing the microscopic carrier dynamics which quantitatively reproduces the observed behavior and provides deeper theoretical understanding of the material system. In contrast to Stranski-Krastanov quantum dots, the fast gain recovery is enhanced by a strong interdot coupling. Optically inactive submonolayer states form an efficient carrier reservoir and give rise to a large nonlinear optical response.
Quantum dots fluorescence quantum yield measured by Thermal Lens Spectroscopy.
Estupiñán-López, Carlos; Dominguez, Christian Tolentino; Cabral Filho, Paulo E; Fontes, Adriana; de Araujo, Renato E
2014-01-01
An essential parameter to evaluate the light emission properties of fluorophores is the fluorescence quantum yield, which quantify the conversion efficiency of absorbed photons to emitted photons. We detail here an alternative nonfluorescent method to determine the absolute fluorescence quantum yield of quantum dots (QDs). The method is based in the so-called Thermal Lens Spectroscopy (TLS) technique, which consists on the evaluation of refractive index gradient thermally induced in the fluorescent material by the absorption of light. Aqueous dispersion carboxyl-coated cadmium telluride (CdTe) QDs samples were used to demonstrate the Thermal Lens Spectroscopy technical procedure. PMID:25103802
Quantum limit for nuclear spin polarization in semiconductor quantum dots
NASA Astrophysics Data System (ADS)
Hildmann, Julia; Kavousanaki, Eleftheria; Burkard, Guido; Ribeiro, Hugo
2014-05-01
A recent experiment [E. A. Chekhovich et al., Phys. Rev. Lett. 104, 066804 (2010), 10.1103/PhysRevLett.104.066804] has demonstrated that high nuclear spin polarization can be achieved in self-assembled quantum dots by exploiting an optically forbidden transition between a heavy hole and a trion state. However, a fully polarized state is not achieved as expected from a classical rate equation. Here, we theoretically investigate this problem with the help of a quantum master equation and we demonstrate that a fully polarized state cannot be achieved due to formation of a nuclear dark state. Moreover, we show that the maximal degree of polarization depends on structural properties of the quantum dot.
Light-Emitting Quantum Dot Transistors: Emission at High Charge Carrier Densities
2015-01-01
For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433
Light-emitting quantum dot transistors: emission at high charge carrier densities.
Schornbaum, Julia; Zakharko, Yuriy; Held, Martin; Thiemann, Stefan; Gannott, Florentina; Zaumseil, Jana
2015-03-11
For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433
Using Quantum Confinement to Uniquely Identify Devices.
Roberts, J; Bagci, I E; Zawawi, M A M; Sexton, J; Hulbert, N; Noori, Y J; Young, M P; Woodhead, C S; Missous, M; Migliorato, M A; Roedig, U; Young, R J
2015-01-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature. PMID:26553435
Using Quantum Confinement to Uniquely Identify Devices
NASA Astrophysics Data System (ADS)
Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.
2015-11-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature.
Using Quantum Confinement to Uniquely Identify Devices
Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.
2015-01-01
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature. PMID:26553435
Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals
See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.
2015-08-03
Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.
Imaging ligand-gated ion channels with quantum dots
NASA Astrophysics Data System (ADS)
Tomlinson, I. D.; Orndorff, Rebecca L.; Gussin, Hélène; Mason, John N.; Blakely, Randy D.; Pepperberg, David R.; Rosenthal, Sandra J.
2007-02-01
In this paper we report two different methodologies for labeling ligand-gated receptors. The first of these builds upon our earlier work with serotonin conjugated quantum dots and our studies with pegilated quantum dots to reduce non specific binding. In this approach a pegilated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphillic polymer derivative of poly acrylamide. These conjugates were used to image the GABA C receptor in oocytes. An alternative approach was used to image tissue sections to study nicotinic acetylcholine receptors in the neuro muscular junction with biotinylated Bungerotoxin and streptavidin coated quantum dots.
Enhanced performance of quantum dot solar cells based on type II quantum dots
Xu, Feng; Yang, Xiao-Guang; Luo, Shuai; Lv, Zun-Ren; Yang, Tao
2014-10-07
The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open circuit voltage (V{sub oc}) as well as conversion efficiency in a type II QDSC, compared to type I QDSCs. The improved V{sub oc} and efficiency are mainly attributed to the much longer Auger recombination lifetime in type II QDs. Moreover, the influence of the carrier lifetime on devices' performance is discussed and clarified. In addition, an explicit criterion to determine the role of quantum dots in solar cells is put forward.
Single-electron Spin Resonance in a Quadruple Quantum Dot
Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo
2016-01-01
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible. PMID:27550534
Single-electron Spin Resonance in a Quadruple Quantum Dot.
Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo
2016-01-01
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible. PMID:27550534
Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.
2011-12-23
The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.
Ultra-bright alkylated graphene quantum dots.
Feng, Lan; Tang, Xing-Yan; Zhong, Yun-Xin; Liu, Yue-Wen; Song, Xue-Huan; Deng, Shun-Liu; Xie, Su-Yuan; Yan, Jia-Wei; Zheng, Lan-Sun
2014-11-01
Highly efficient and stable photoluminescence (PL) are urgently desired for graphene quantum dots (GQDs) to facilitate their prospective applications as optical materials. Here, we report the facile and straightforward synthesis of alkylated graphene quantum dots (AGQDs) via the solvothermal reaction of propagatively alkylated graphene sheets (PAGenes). In contrast to most GQDs reported so far, the synthesized AGQDs process pH-independent and ultra-bright PL with a relative quantum yield of up to 65%. Structural and chemical composition characterization demonstrated that the synthesized AGQDs are nearly oxygen-defect-free with alkyl groups decorated on edges and basal plane, which may contribute to their greatly improved pH tolerance and high quantum efficiency. The photocatalytic performance of AGQDs-P25 nanocomposites was evaluated by the degradation of Rhodamine B under visible light. The photocatalytic rate is ca. 5.9 times higher than that of pure P25, indicating that AGQDs could harness the visible spectrum of sunlight for energy conversion or environmental therapy. PMID:25192187
The quantum dot nanoconjugate tool box (Invited Paper)
NASA Astrophysics Data System (ADS)
Tomlinson, I. D.; Wright, D. W.; Giorgio, T. D.; Blakely, R. D.; Pennycook, S. J.; Hercules, D.; Bentzen, L.; Smith, R. A.; McBride, J.; Vergne, M. J.; Rosenthal, S.
2005-04-01
The surface coating of quantum dots has been characterised using Z-stem. Quantum dots have been pegylated to increase stability in aqueous solution. The fluorescence intensity of the quantum dots was modulated pegylation. PEG was coupled using different ratios of EDC, PEG and NHS. Optimum coupling conditions were found to occur when 2000 equivalents of PEG were reacted with 1 equivalent of dot in the presence of 1500 equivalents of NHS and EDC. Angiotensin II was also conjugated to quantum dots and these conjugates were shown to be biologically active. Quantum dots have also been surface functionalised with other peptides such as NGR with subsequent demonstration of cell surface binding and can be characterized by flow cytometry.
Reeves, Kyle G; Schleife, André; Correa, Alfredo A; Kanai, Yosuke
2015-10-14
The role of surface termination on phonon-mediated relaxation of an excited electron in quantum dots was investigated using first-principles simulations. The surface terminations of a silicon quantum dot with hydrogen and fluorine atoms lead to distinctively different relaxation behaviors, and the fluorine termination shows a nontrivial relaxation process. The quantum confined electronic states are significantly affected by the surface of the quantum dot, and we find that a particular electronic state dictates the relaxation behavior through its infrequent coupling to neighboring electronic states. Dynamical fluctuation of this electronic state results in a slow shuttling behavior within the manifold of unoccupied electronic states, controlling the overall dynamics of the excited electron with its characteristic frequency of this shuttling behavior. The present work revealed a unique role of surface termination, dictating the hot electron relaxation process in quantum-confined systems in the way that has not been considered previously. PMID:26331672
Quantum dot spin cellular automata for realizing a quantum processor
NASA Astrophysics Data System (ADS)
Bayat, Abolfazl; Creffield, Charles E.; Jefferson, John H.; Pepper, Michael; Bose, Sougato
2015-10-01
We show how single quantum dots, each hosting a singlet-triplet qubit, can be placed in arrays to build a spin quantum cellular automaton. A fast (˜10 ns) deterministic coherent singlet-triplet filtering, as opposed to current incoherent tunneling/slow-adiabatic based quantum gates (operation time ˜300 ns), can be employed to produce a two-qubit gate through capacitive (electrostatic) couplings that can operate over significant distances. This is the coherent version of the widely discussed charge and nano-magnet cellular automata, and would increase speed, reduce dissipation, and perform quantum computation while interfacing smoothly with its classical counterpart. This combines the best of two worlds—the coherence of spin pairs known from quantum technologies, and the strength and range of electrostatic couplings from the charge-based classical cellular automata. Significantly our system has zero electric dipole moment during the whole operation process, thereby increasing its charge dephasing time.
Quantum confinement in transition metal oxide quantum wells
Choi, Miri; Lin, Chungwei; Butcher, Matthew; Posadas, Agham B.; Demkov, Alexander A.; Rodriguez, Cesar; Zollner, Stefan; He, Qian; Borisevich, Albina Y.
2015-05-11
We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.
Lifetime blinking in nonblinking nanocrystal quantum dots.
Galland, Christophe; Ghosh, Yagnaseni; Steinbrück, Andrea; Hollingsworth, Jennifer A; Htoon, Han; Klimov, Victor I
2012-01-01
Nanocrystal quantum dots are attractive materials for applications as nanoscale light sources. One impediment to these applications is fluctuations of single-dot emission intensity, known as blinking. Recent progress in colloidal synthesis has produced nonblinking nanocrystals; however, the physics underlying blinking suppression remains unclear. Here we find that ultra-thick-shell CdSe/CdS nanocrystals can exhibit pronounced fluctuations in the emission lifetimes (lifetime blinking), despite stable nonblinking emission intensity. We demonstrate that lifetime variations are due to switching between the neutral and negatively charged state of the nanocrystal. Negative charging results in faster radiative decay but does not appreciably change the overall emission intensity because of suppressed nonradiative Auger recombination for negative trions. The Auger process involving excitation of a hole (positive trion pathway) remains efficient and is responsible for charging with excess electrons, which occurs via Auger-assisted ionization of biexcitons accompanied by ejection of holes. PMID:22713750
Diamagnetic susceptibility of a magneto-donor in Inhomogeneous Quantum Dots
NASA Astrophysics Data System (ADS)
Mmadi, A.; Rahmani, K.; Zorkani, I.; Jorio, A.
2013-05-01
The binding energy and diamagnetic susceptibility χdia are investigated for a shallow donor confined to move in a spherical Inhomogeneous Quantum Dots "IQD" in the presence of a magnetic field. The calculation was performed with the use of a variational method in the effective mass approximation. We describe the effect of the quantum confinement by an infinite deep potential. The results for a spherical Inhomogeneous Quantum Dots made out of [Ga1-xAlxAs (Core)/GaAs (Well)/Ga1-xAlxAs (Shell)] show that the diamagnetic susceptibility and the binding energy increase with the magnetic field. There are more pronounced for large spherical layer. The binding energy and the diamagnetic susceptibility depend strongly on the donor position. We remark that the diamagnetic susceptibility presents a minimum corresponding to a critical value of the ratio of the inner radius to the outer radius , this critical value is important for nanofabrication techniques.
Lateral excitonic switching in vertically stacked quantum dots
NASA Astrophysics Data System (ADS)
Jarzynka, Jarosław R.; McDonald, Peter G.; Shumway, John; Galbraith, Ian
2016-06-01
We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.
Quantum confinement in metal nanofilms: Optical spectra
NASA Astrophysics Data System (ADS)
Khmelinskii, Igor; Makarov, Vladimir I.
2016-05-01
We report optical absorption and photoluminescence spectra of Au, Fe, Co and Ni polycrystalline nanofilms in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged from 1.1 to 15.6 nm, depending on the material. The films were deposited on fused silica substrates by sputtering/thermo-evaporation, with Fe, Co and Ni protected by a SiO2 film deposited on top. The results are interpreted within the particle-in-a-box model, with the box width equal to the mass thickness of the nanofilm. The transverse-quantized energy levels and transition energies scale as the inverse square of the film thickness. The calculated values of the effective electron mass are 0.93 (Au), 0.027 (Fe), 0.21 (Co) and 0.16 (Ni), in units of mo - the mass of the free electron, being independent on the film thickness. The uncertainties in the effective mass values are ca. 2.5%, determined by the film thickness calibration. The second calculated model parameter, the quantum number n of the HOMO, was thickness-independent in Au (5.00) and Fe (6.00), and increased with the film thickness in Co (from 7 to 9) and Ni (from 7 to 11). The transitions observed in the absorbance all start at the level n and correspond to Δn=+1, +2, +3, etc. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with the increased excitation energy. The photoluminescence quantum yields grow linearly with the excitation energy, showing evidence of multiple exciton generation. A prototype Fe-SnO2 nanofilm photovoltaic cell demonstrated at least 90% quantum yield of photoelectrons at 77 K.
Solution-based synthesis of high yield CZTS (Cu2ZnSnS4) spherical quantum dots
NASA Astrophysics Data System (ADS)
Rajesh, G.; Muthukumarasamy, N.; Subramanian, E. P.; Venkatraman, M. R.; Agilan, S.; Ragavendran, V.; Thambidurai, M.; Velumani, S.; Yi, Junsin; Velauthapillai, Dhayalan
2015-01-01
High yield CZTS quantum dots have been synthesized using simple precursors by chemical precipitation technique. Formation mechanism of CZTS spherical quantum dots also has been investigated. According to the mechanism, copper sulfide nuclei firstly forms, and serves as the starting point for the nucleation and growth of CZTS. X-ray diffraction pattern, X-ray photoelectron spectra (XPS) and Raman spectra reveals the formation of pure kesterite structure Cu2ZnSnS4 nanoparticles. HRTEM analysis reveals the formation of CZTS quantum dots with an average particle size of ∼8.3 nm. The elemental distribution of CZTS quantum dots studied using STEM elemental mapping reveals that Cu, Zn, Sn and S are present in the sample. The photoluminescence spectra of CZTS exhibit a broad red emission band at 657 nm. The optical band gap is shifted to the higher energy side and it shows the presence of quantum confinement effect.
Non-parabolic model for InAs/GaAs quantum dot capacitance spectroscopy
NASA Astrophysics Data System (ADS)
Filikhin, I.; Deyneka, E.; Vlahovic, B.
2006-12-01
InAs/GaAs quantum dot electron spectra obtained from the capacitance-voltage measurements by B.T. Miller et al. [B.T. Miller, W. Hansen, S. Manus, R.J. Luyken, A. Lorke, J.P. Kotthaus, S. Huant, G. Medeiros-Ribeiro, P.M. Petroff, Phys. Rev. B 56 (1997) 6764] are quantitatively interpreted by applying a three-dimensional model of a semiconductor quantum dot with energy-dependent electron effective mass and finite confinement potential. The Coulomb interaction between tunnelled electrons is taken into account by perturbation theory. The observed significant increase in the electron effective mass of the quantum dot in respect to its bulk value is explained by the non-parabolic effect.
NASA Astrophysics Data System (ADS)
Hayrapetyan, D. B.; Kazaryan, E. M.; Sarkisyan, H. A.
2016-01-01
An electron gas in a strongly oblated ellipsoidal quantum dot with impenetrable walls in the presence of external magnetic field is considered. Influence of the walls of the quantum dot is assumed to be so strong in the direction of the minor axis (the OZ axis) that the Coulomb interaction between electrons in this direction can be neglected and considered as two-dimensional. On the basis of geometric adiabaticity we show that in the case of a few-particle gas a powerful repulsive potential of the quantum dot walls has a parabolic form and localizes the gas in the geometric center of the structure. Due to this fact, conditions occur to implement the generalized Kohn theorem for this system. The parabolic confinement potential depends on the geometry of the ellipsoid, which allows, together with the magnetic field to control resonance frequencies of transitions by changing the geometric dimensions of the QD.
Power-law photoluminescence decay in quantum dots
Král, Karel; Menšík, Miroslav
2014-05-15
Some quantum dot samples show a long-time (power-law) behavior of their luminescence intensity decay. This effect has been recently explained as being due to a cooperation of many tunneling channels transferring electrons from small quantum dots with triplet exciton to quantum dots at which the electrons can recombine with the holes in the valence band states. In this work we show that the long-time character of the sample luminescence decay can also be caused by an intrinsic property of a single dot, namely, by a non-adiabatic effect of the electron occupation up-conversion caused by the electron-phonon multiple scattering mechanism.
Quantum chromodynamics near the confinement limit
Quigg, C.
1985-09-01
These nine lectures deal at an elementary level with the strong interaction between quarks and its implications for the structure of hadrons. Quarkonium systems are studied as a means for measuring the interquark interaction. This is presumably (part of) the answer a solution to QCD must yield, if it is indeed the correct theory of the strong interactions. Some elements of QCD are reviewed, and metaphors for QCD as a confining theory are introduced. The 1/N expansion is summarized as a way of guessing the consequences of QCD for hadron physics. Lattice gauge theory is developed as a means for going beyond perturbation theory in the solution of QCD. The correspondence between statistical mechanics, quantum mechanics, and field theory is made, and simple spin systems are formulated on the lattice. The lattice analog of local gauge invariance is developed, and analytic methods for solving lattice gauge theory are considered. The strong-coupling expansion indicates the existence of a confining phase, and the renormalization group provides a means for recovering the consequences of continuum field theory. Finally, Monte Carlo simulations of lattice theories give evidence for the phase structure of gauge theories, yield an estimate for the string tension characterizing the interquark force, and provide an approximate description of the quarkonium potential in encouraging good agreement with what is known from experiment.
Quantum Dot Device Design Optimization for Resonator Coupling
NASA Astrophysics Data System (ADS)
King, Cameron; Coppersmith, S. N.; Friesen, Mark
Coupling a semiconductor quantum dot qubit to a superconducting resonator broadens the possibilities for interqubit communication and potentially allows integration of quantum dots with other qubit systems. The major technological hurdle that must be overcome is reaching the strong coupling limit, where the coupling frequency between the resonator and the qubit is larger than both the qubit decoherence rate and the photon loss rate of the resonator. In this work, we examine optimization of the quantum dot device design. Using the Thomas-Fermi approximation in conjunction with a metallic dot capacitive model, we focus on improving the capacitive coupling between a resonator gate and a quantum dot while decreasing the cross-coupling to nearby dots. Through these simulations, we find that the optimization follows an intuitive geometric relation. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), and ONR (N00014-15-1-0029).
Thermodynamic properties of a quantum Hall anti-dot interferometer
NASA Astrophysics Data System (ADS)
Levy Schreier, Sarah; Stern, Ady; Rosenow, Bernd; Halperin, Bertrand I.
2016-02-01
We study quantum Hall interferometers in which the interference loop encircles a quantum anti-dot. We base our study on thermodynamic considerations, which we believe reflect the essential aspects of interference transport phenomena. We find that similar to the more conventional Fabry-Perot quantum Hall interferometers, in which the interference loop forms a quantum dot, the anti-dot interferometer is affected by the electro-static Coulomb interaction between the edge modes defining the loop. We show that in the Aharonov-Bohm regime, in which effects of fractional statistics should be visible, is easier to access in interferometers based on anti-dots than in those based on dots. We discuss the relevance of our results to recent measurements on anti-dots interferometers.
Controlling quantum dot energies using submonolayer bandstructure engineering
Yu, L.; Law, S.; Wasserman, D.; Jung, D.; Lee, M. L.; Shen, J.; Cha, J. J.
2014-08-25
We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77 K from 1.38 eV to 1.88 eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.
A hybrid silicon evanescent quantum dot laser
NASA Astrophysics Data System (ADS)
Jang, Bongyong; Tanabe, Katsuaki; Kako, Satoshi; Iwamoto, Satoshi; Tsuchizawa, Tai; Nishi, Hidetaka; Hatori, Nobuaki; Noguchi, Masataka; Nakamura, Takahiro; Takemasa, Keizo; Sugawara, Mitsuru; Arakawa, Yasuhiko
2016-09-01
We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred by direct wafer bonding onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors. The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T 0 of 303 K near room temperature. Furthermore, by reducing the width of the GaAs/AlGaAs mesa down to 8 µm, continuous-wave operation is realized at 25 °C.
Fabrication of a graphene quantum dot device
NASA Astrophysics Data System (ADS)
Lee, Jeong Il; Kim, Eunseong
2014-03-01
Graphene, which exhibits a massless Dirac-like spectrum for its electrons, has shown impressive properties for nano-electronics applications including a high mobility and a width dependent bandgap. We will report the preliminary report on the transport property of the suspended graphene nano-ribbon(GNR) quantum dot device down to dilution refrigerator temperature. This GNR QD device was fabricated to realize an ideal probe to investigate Kondo physics--a characteristic phenomenon in the physics of strongly correlated electrons. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.
Superexchange blockade in triple quantum dots
NASA Astrophysics Data System (ADS)
Sánchez, Rafael; Gallego-Marcos, Fernando; Platero, Gloria
2014-04-01
We propose the interaction of two electrons in a triple quantum dot as a minimal system to control long-range superexchange transitions. These are probed by transport spectroscopy. Narrow resonances appear indicating the transfer of charge from one side of the sample to the other with the central one being occupied only virtually. We predict that two different intermediate states establish the two arms of a one-dimensional interferometer. We find configurations where destructive interference of the two superexchange trajectories totally blocks the current through the system. We emphasize the role of spin correlations giving rise to lifetime-enhanced resonances.
Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins
NASA Astrophysics Data System (ADS)
Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou
2016-07-01
We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.
Quantum Adiabatic Pumping by Modulating Tunnel Phase in Quantum Dots
NASA Astrophysics Data System (ADS)
Taguchi, Masahiko; Nakajima, Satoshi; Kubo, Toshihiro; Tokura, Yasuhiro
2016-08-01
In a mesoscopic system, under zero bias voltage, a finite charge is transferred by quantum adiabatic pumping by adiabatically and periodically changing two or more control parameters. We obtained expressions for the pumped charge for a ring of three quantum dots (QDs) by choosing the magnetic flux penetrating the ring as one of the control parameters. We found that the pumped charge shows a steplike behavior with respect to the variance of the flux. The value of the step heights is not universal but depends on the trajectory of the control parameters. We discuss the physical origin of this behavior on the basis of the Fano resonant condition of the ring.
Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins
NASA Astrophysics Data System (ADS)
Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou
2016-02-01
We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.
Fast synthesize ZnO quantum dots via ultrasonic method.
Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-05-01
Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. PMID:26611814
Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae
2015-07-01
Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots. PMID:26373077
Double quantum dot in a quantum dash: Optical properties
Kaczmarkiewicz, Piotr Machnikowski, Paweł; Kuhn, Tilmann
2013-11-14
We study the optical properties of highly elongated, highly flattened quantum dot structures, also referred to as quantum dashes, characterized by the presence of two trapping centers located along the structure. Such a system can exhibit some of the properties characteristic for double quantum dots. We show that sub- and super-radiant states can form for certain quantum dash geometries, which is manifested by a pronounced transfer of intensity between spectral lines, accompanied by the appearance of strong electron-hole correlations. We also compare exciton absorption spectra and polarization properties of a system with a single and double trapping center and show how the geometry of multiple trapping centers influences the optical properties of the system. We show that for a broad range of trapping geometries the relative absorption intensity of the ground state is larger than that of the lowest excited states, contrary to the quantum dash systems characterized by a single trapping center. Thus, optical properties of these structures are determined by fine details of their morphology.
Two-electron volcano-shaped quantum dot
NASA Astrophysics Data System (ADS)
Garcia, L. F.; Gutiérrez, W.; Mikhailov, I. D.
2014-12-01
We propose a simple model of non-uniform volcano-shaped quantum dot that reflects the confinement details of the morphology of really fabricated GaAs/InAs nanorings and whose profile geometry, on the one hand, is described by means of simple analytical functions and, on the other hand, allows us to find exact one-particle wave functions. By using them as a basis function we calculate two-electron lower energies as functions of the external magnetic field applied along the growth axis. We show that the ring morphology and electron-electron interaction have great influence on the energy spectrum structure of nanoring and the Aharonov-Bohm oscillations.
Hyper-parallel photonic quantum computation with coupled quantum dots
NASA Astrophysics Data System (ADS)
Ren, Bao-Cang; Deng, Fu-Guo
2014-04-01
It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF.
Non-blinking quantum dot with a plasmonic nanoshell resonator
NASA Astrophysics Data System (ADS)
Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit
2015-02-01
Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.
Fast Hybrid Silicon Double-Quantum-Dot Qubit
NASA Astrophysics Data System (ADS)
Shi, Zhan; Simmons, C. B.; Prance, J. R.; Gamble, John King; Koh, Teck Seng; Shim, Yun-Pil; Hu, Xuedong; Savage, D. E.; Lagally, M. G.; Eriksson, M. A.; Friesen, Mark; Coppersmith, S. N.
2012-04-01
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S2=3/4 (S=1/2) and Sz=-1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one- and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Moreover, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.
Biosensing with Luminescent Semiconductor Quantum Dots
Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi
2006-01-01
Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapting QDs for several predominantly in vitro biosensing applications including use in immunoassays, as generalized probes, in nucleic acid detection and fluorescence resonance energy transfer (FRET) - based sensing. We also describe several important considerations when working with QDs mainly centered on the choice of material(s) and appropriate strategies for attaching biomolecules to the QDs.
FAST TRACK COMMUNICATION: Graphene based quantum dots
NASA Astrophysics Data System (ADS)
Zhang, H. G.; Hu, H.; Pan, Y.; Mao, J. H.; Gao, M.; Guo, H. M.; Du, S. X.; Greber, T.; Gao, H.-J.
2010-08-01
Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.
Tunneling rate in double quantum dots
NASA Astrophysics Data System (ADS)
Filikhin, Igor; Matinyan, Sergei; Vlahovic, Branislav
2014-03-01
We study spectral properties of electron tunneling in double quantum dots (DQDs) (and double quantum wells (DQWs)) and their relation to the geometry. In particular we compare the tunneling in DQW with chaotic and regular geometry, taking into account recent evidence about regularization of the tunneling rate when the QW geometry is chaotic. Our calculations do not support this assumption. We confirm high influence of the QW geometry boundaries on the rate fluctuation along the spectrum. The factors of the effective mass anisotropy and violation of the symmetry of DQD and DQW are also considered. Generally, we found that the small violation of the symmetry drastically affects tunneling. This work is supported by the NSF (HRD-0833184) and NASA (NNX09AV07A).
Universal Braess paradox in open quantum dots.
Barbosa, A L R; Bazeia, D; Ramos, J G G S
2014-10-01
We present analytical and numerical results that demonstrate the presence of the Braess paradox in chaotic quantum dots. The paradox that we identify, originally perceived in classical networks, shows that the addition of more capacity to the network can suppress the current flow in the universal regime. We investigate the weak localization term, showing that it presents the paradox encoded in a saturation minimum of the conductance, under the presence of hyperflow in the external leads. In addition, we demonstrate that the weak localization suffers a transition signal depending on the overcapacity lead and presents an echo on the magnetic crossover before going to zero due to the full time-reversal symmetry breaking. We also show that the quantum interference contribution can dominate the Ohm term in the presence of constrictions and that the corresponding Fano factor engenders an anomalous behavior. PMID:25375575
Universal Braess paradox in open quantum dots
NASA Astrophysics Data System (ADS)
Barbosa, A. L. R.; Bazeia, D.; Ramos, J. G. G. S.
2014-10-01
We present analytical and numerical results that demonstrate the presence of the Braess paradox in chaotic quantum dots. The paradox that we identify, originally perceived in classical networks, shows that the addition of more capacity to the network can suppress the current flow in the universal regime. We investigate the weak localization term, showing that it presents the paradox encoded in a saturation minimum of the conductance, under the presence of hyperflow in the external leads. In addition, we demonstrate that the weak localization suffers a transition signal depending on the overcapacity lead and presents an echo on the magnetic crossover before going to zero due to the full time-reversal symmetry breaking. We also show that the quantum interference contribution can dominate the Ohm term in the presence of constrictions and that the corresponding Fano factor engenders an anomalous behavior.
Silicon quantum dots for biological applications.
Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka
2014-01-01
Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed. PMID:23949967
Semiconductor Quantum Dots for Biomedicial Applications
Shao, Lijia; Gao, Yanfang; Yan, Feng
2011-01-01
Semiconductor quantum dots (QDs) are nanometre-scale crystals, which have unique photophysical properties, such as size-dependent optical properties, high fluorescence quantum yields, and excellent stability against photobleaching. These properties enable QDs as the promising optical labels for the biological applications, such as multiplexed analysis of immunocomplexes or DNA hybridization processes, cell sorting and tracing, in vivo imaging and diagnostics in biomedicine. Meanwhile, QDs can be used as labels for the electrochemical detection of DNA or proteins. This article reviews the synthesis and toxicity of QDs and their optical and electrochemical bioanalytical applications. Especially the application of QDs in biomedicine such as delivering, cell targeting and imaging for cancer research, and in vivo photodynamic therapy (PDT) of cancer are briefly discussed. PMID:22247690
NASA Astrophysics Data System (ADS)
Boda, Aalu; Chatterjee, Ashok
2016-09-01
The problem of a neutral hydrogenic donor (D0) centre located at the centre of a GaAs quantum dot with Gaussian confinement is studied in the presence of an external magnetic field. The ground and the first excited state energies and the corresponding binding energies are obtained as functions of the potential strength, quantum dot radius and the magnetic field using a variational method. It is suggested that the first excited state of the D0 centre is bound for sufficiently strong confinement potential. The 1 s - 2p- transition energy and the magnetic susceptibilities for the ground and the first excited states are also determined.
Auger recombination in In(Ga)Sb/InAs quantum dots
Zabel, T. Reuterskiöld Hedlund, C.; Gustafsson, O.; Berggren, J.; Ernerheim-Jokumsen, C.; Soldemo, M.; Weissenrieder, J.; Götelid, M.; Hammar, M.; Karim, A.; Wang, Q.
2015-01-05
We report on the epitaxial formation of type II In{sub 0.5}Ga{sub 0.5}Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170–200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10{sup −28} cm{sup 6}/s for In{sub 0.5}Ga{sub 0.5}Sb/InAs quantum dots and 1.47 × 10{sup −27} cm{sup 6}/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field
NASA Astrophysics Data System (ADS)
Xu-Fang, Bai; Ying, Zhang; Wuyunqimuge; Eerdunchaolu
2016-07-01
Based on the variational method of Pekar type, we study the energies and the wave-functions of the ground and the first-excited states of magneto-bipolaron, which is strongly coupled to the LO phonon in a parabolic potential quantum dot under an applied magnetic field, thus built up a quantum dot magneto-bipolaron qubit. The results show that the oscillation period of the probability density of the two electrons in the qubit decreases with increasing electron–phonon coupling strength α, resonant frequency of the magnetic field ω c, confinement strength of the quantum dot ω 0, and dielectric constant ratio of the medium η the probability density of the two electrons in the qubit oscillates periodically with increasing time t, angular coordinate φ 2, and dielectric constant ratio of the medium η the probability of electron appearing near the center of the quantum dot is larger, and the probability of electron appearing away from the center of the quantum dot is much smaller. Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2013407119) and the Items of Institution of Higher Education Scientific Research of Hebei Province and Inner Mongolia, China (Grant Nos. ZD20131008, Z2015149, Z2015219, and NJZY14189).
NASA Astrophysics Data System (ADS)
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.
2016-07-01
Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.
Fast and efficient photodetection in nanoscale quantum-dot junctions.
Prins, Ferry; Buscema, Michele; Seldenthuis, Johannes S; Etaki, Samir; Buchs, Gilles; Barkelid, Maria; Zwiller, Val; Gao, Yunan; Houtepen, Arjan J; Siebbeles, Laurens D A; van der Zant, Herre S J
2012-11-14
We report on a photodetector in which colloidal quantum dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do not go at the cost of one another. PMID:23094869
Colloidal quantum dot light-emitting devices.
Wood, Vanessa; Bulović, Vladimir
2010-01-01
Colloidal quantum dot light-emitting devices (QD-LEDs) have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI). We review the key advantages of using quantum dots (QDs) in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs - optical excitation, Förster energy transfer, and direct charge injection - that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt). We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs. PMID:22110863
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.
Using quantum dot photoluminescence for load detection
NASA Astrophysics Data System (ADS)
Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.
2016-08-01
We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.
2014-10-14
In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less
Excitation transfer in stacked quantum dot chains
NASA Astrophysics Data System (ADS)
Kanjanachuchai, Songphol; Xu, Ming; Jaffré, Alexandre; Jittrong, Apichart; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed
2015-05-01
Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP) templates yield a rich emission spectrum with an unusual carrier transfer characteristic compared to conventional quantum dot (QD) stacks. The photoluminescent spectra of the controlled, single QDC layer comprise multiple peaks from the orthogonal QDCs, the free-standing QDs, the CHP, the wetting layers and the GaAs substrate. When the QDC layers are stacked, employing a 10 nm GaAs spacer between adjacent QDC layers, the PL spectra are dominated by the top-most stack, indicating that the QDC layers are nominally uncoupled. Under high excitation power densities when the high-energy peaks of the top stack are saturated, however, low-energy PL peaks from the bottom stacks emerge as a result of carrier transfers across the GaAs spacers. These unique PL signatures contrast with the state-filling effects in conventional, coupled QD stacks and serve as a means to quickly assess the presence of electronic coupling in stacks of dissimilar-sized nanostructures.
Stark Effect of Excitons in a Quantum Nano-rod with Parabolic Confinement
NASA Astrophysics Data System (ADS)
Lyo, S. K.
2013-03-01
We study the exciton binding energy and the oscillator strength as a function of a DC electric field in a quasi-one-dimensional quantum dot (i.e., nano rod) with parabolic confinements in the conduction and valence bands. The relative importance of the quantum confinement and electron-hole interaction is examined by varying the the linear confinement length (i.e., rod length). We find an abrupt decrease of the oscillator strength, loss of exciton binding energy, and a sudden increase of the root-mean-square average of electron-hole separation as the excitons are dissociated at the threshold field. The field dependence of the effects are also investigated as a function of the rod length and the radius of the nano rod. The numerical results are applied to GaAs and CdSe rods. This work was supported by DOE/BES under Contract No.DE-AC04-94AL85000.
Electron Spin Qubits in Si/SiGe Quantum Dots
NASA Astrophysics Data System (ADS)
Eriksson, Mark
2010-10-01
It is intriguing that silicon, the central material of modern classical electronics, also has properties well suited to quantum electronics. Recent advances in Si/SiGe quantum devices have enabled the creation of high-quality silicon quantum dots, also known as artificial atoms. Motivated in part by the potential for very long spin coherence times in this material, we are pursuing the development of individual electron spin qubits in silicon quantum dots. I will discuss recent demonstrations of single-shot spin measurement in a Si/SiGe quantum dot spin qubit, and the demonstration of spin-relaxation times longer than one second in such a system. These and similar measurements depend on a knowledge of tunnel rates between quantum dots and nearby reservoirs or between pairs of quantum dots. Measurements of such rates provide an opportunity to revisit classic experiments in quantum mechanics. At the same time, the unique features of the silicon conduction band lead to novel and unexpected effects, demonstrating that Si/SiGe quantum dots provide a highly controlled experimental system in which to study ideas at the heart of quantum physics.
Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot.
Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal; Patriarche, Gilles; Harmand, Jean-Christophe; Akopian, Nika; Zwiller, Val
2016-02-10
We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width. We notice that the emission spectra consist often of two peaks close in energy, which we explain with a comprehensive theory showing that the symmetry of the system plays a crucial role for the hole levels forming hybridized orbitals. Our results state that crystal phase quantum dots have promising quantum optical properties for single photon application and quantum optics. PMID:26806321
Atomically precise, coupled quantum dots fabricated by cleaved edge overgrowth
NASA Astrophysics Data System (ADS)
Wegscheider, W.; Schedelbeck, G.; Bichler, M.; Abstreiter, G.
Recent progress in the fabrication of quantum dots by molecular beam epitaxy along three directions in space is reviewed. The optical properties of different sample structures consisting of individual quantum dots, pairs of coupled dots as well as of linear arrays of dots are studied by microscopic photoluminescence spectroscopy. The high degree of control over shape, composition and position of the 7×7×7 nm3 size GaAs quantum dots, which form at the intesection of three orthogonal quantum wells, allows a detailed investigation of the influence of coupling between almost identical zero-dimensional objects. In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold cleaved edge overgrowth structure, the photoluminescence spetrum of an individual quantum dot exhibits a single sharp line (full width at half maximum <70μeV) almost free of background signal. Microscopic photoluminescence excitation spectroscopy directly reveals the discreteness of the energy levels of the zero-dimensional structures and justifies the denomination "artificial atoms" for the quantum dots. It is further demonstrated that an "artifical molecule", characterized by the existence of bonding and antibonding states can be assembled from two of such "artificial atoms". The coupling strength between the "artificial atoms" is adjusted by the "interatomic" distance and is reflected in the energetic separation of the bonding and antibonding levels and the linewidths of the corresponding interband transitions.
Spin transport measurements in gallium arsenide quantum dots
NASA Astrophysics Data System (ADS)
Folk, Joshua Alexander
This thesis presents a series of measurements investigating the spin physics of lateral quantum dots, defined electrostatically in the 2-D electron gas at the interface of a GaAs/AlGaAs heterostructure. The experiments span a range from open dots, where the leads of the dot carry at least one fully transmitting mode, to closed dots, where the leads are set to be tunnel barriers. For open dots, spin physics is inferred from measurements of conductance fluctuations; the effects of spin degeneracy in the orbital levels as well as a spin-orbit interaction are observed. In the closed dot measurements, ground state spin transitions as electrons are added to the dot may be determined from the motion of Coulomb blockade peaks in an in-plane magnetic field. In addition, this thesis demonstrates for the first time a direct measurement of the spin polarization of current emitted from a quantum dot, or a quantum point contact, during transport. These experiments make use of a spin-sensitive focusing geometry in which a quantum point contact serves as a spin analyzer for the mesoscopic device under test. Measurements are presented both in the open dot regime, where good agreement with theory is found, as well as the closed dot regime, where the data defies a simple theoretical explanation.
Ferritin-Templated Quantum-Dots for Quantum Logic Gates
NASA Technical Reports Server (NTRS)
Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.
2005-01-01
Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.
Behavior of optical bistability in multifold quantum dot molecules
NASA Astrophysics Data System (ADS)
Hamedi, H. R.; Mehmannavaz, M. R.
2015-02-01
We analyze the optical bistability (OB) behavior in a multifold quantum dot (QD) molecule composed of five quantum dots controlled by the tunneling coupling. It is shown that the optical bistability can strongly be affected by the tunneling inter-dot coupling coefficients as well as detuning parameters. In addition, we find that the rate of an incoherent pump field has a leading role in modification of the OB threshold. We then generalize our analysis to the case of multifold quantum dot molecules where the number of the quantum dots is N (with a center dot and N-1 satellite dots). We compare the OB features that could occur in a multifold QD system consist of three (N= ), four (N=\\text{4} ), and five (N = 5) quantum dots. We realize that the OB threshold increases as the number of satellite QDs increases. Such controllable optical bistability in multiple QD molecules may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.
RKKY interaction in a chirally coupled double quantum dot system
Heine, A. W.; Tutuc, D.; Haug, R. J.; Zwicknagl, G.; Schuh, D.; Wegscheider, W.
2013-12-04
The competition between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction is investigated in a double quantum dots system, coupled via a central open conducting region. A perpendicular magnetic field induces the formation of Landau Levels which in turn give rise to the so-called Kondo chessboard pattern in the transport through the quantum dots. The two quantum dots become therefore chirally coupled via the edge channels formed in the open conducting area. In regions where both quantum dots exhibit Kondo transport the presence of the RKKY exchange interaction is probed by an analysis of the temperature dependence. The thus obtained Kondo temperature of one dot shows an abrupt increase at the onset of Kondo transport in the other, independent of the magnetic field polarity, i.e. edge state chirality in the central region.
Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.
2003-07-01
We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity.
Subtle leakage of a Majorana mode into a quantum dot
NASA Astrophysics Data System (ADS)
Vernek, E.; Penteado, P. H.; Seridonio, A. C.; Egues, J. C.
2014-04-01
We investigate quantum transport through a quantum dot connected to source and drain leads and side coupled to a topological superconducting nanowire (Kitaev chain) sustaining Majorana end modes. Using a recursive Green's-function approach, we determine the local density of states of the system and find that the end Majorana mode of the wire leaks into the dot, thus, emerging as a unique dot level pinned to the Fermi energy ɛF of the leads. Surprisingly, this resonance pinning, resembling, in this sense, a "Kondo resonance," occurs even when the gate-controlled dot level ɛdot(Vg) is far above or far below ɛF. The calculated conductance G of the dot exhibits an unambiguous signature for the Majorana end mode of the wire: In essence, an off-resonance dot [ɛdot(Vg)≠ɛF], which should have G =0, shows, instead, a conductance e2/2h over a wide range of Vg due to this pinned dot mode. Interestingly, this pinning effect only occurs when the dot level is coupled to a Majorana mode; ordinary fermionic modes (e.g., disorder) in the wire simply split and broaden (if a continuum) the dot level. We discuss experimental scenarios to probe Majorana modes in wires via these leaked/pinned dot modes.
Emergent quantum confinement at topological insulator surfaces
NASA Astrophysics Data System (ADS)
Bahramy, M. S.; King, P. D. C.; de la Torre, A.; Chang, J.; Shi, M.; Patthey, L.; Balakrishnan, G.; Hofmann, Ph.; Arita, R.; Nagaosa, N.; Baumberger, F.
2012-10-01
Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z2 topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study sheds new light on the surface-bulk connectivity in topological insulators, and reveals how this is modified by quantum confinement.
Puthen-Veettil, B. Patterson, R.; König, D.; Conibeer, G.; Green, M. A.
2014-10-28
Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.
Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience
NASA Astrophysics Data System (ADS)
Pathak, Smita
Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to
Electrons, holes, and excitons in GaAs polytype quantum dots
NASA Astrophysics Data System (ADS)
Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep
2016-03-01
Single and multi-band kṡp Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.
Trion X+ in vertically coupled type II quantum dots in threading magnetic field.
Horta-Piñeres, Sindi; Escorcia-Salas, Gene Elizabeth; Mikhailov, Ilia D; Sierra-Ortega, José
2012-01-01
We analyze the energy spectrum of a positively charged exciton confined in a semiconductor heterostructure formed by two vertically coupled, axially symmetrical type II quantum dots located close to each other. The electron in the structure is mainly located inside the dots, while the holes generally move in the exterior region close to the symmetry axis. The solutions of the Schrödinger equation are obtained by a variational separation of variables in the adiabatic limit. Numerical results are shown for bonding and anti-bonding lowest-lying of the trion states corresponding to the different quantum dots morphologies, dimensions, separation between them, thicknesses of the wetting layers, and the magnetic field strength. PMID:23013605
Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography
Qian, X.; Li, J.; Wasserman, D.; Goodhue, W. D.
2008-12-08
We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.
Hybrid Circuit QED with Double Quantum Dots
NASA Astrophysics Data System (ADS)
Petta, Jason
2014-03-01
Cavity quantum electrodynamics explores quantum optics at the most basic level of a single photon interacting with a single atom. We have been able to explore cavity QED in a condensed matter system by placing a double quantum dot (DQD) inside of a high quality factor microwave cavity. Our results show that measurements of the cavity field are sensitive to charge and spin dynamics in the DQD.[2,3] We can explore non-equilibrium physics by applying a finite source-drain bias across the DQD, which results in sequential tunneling. Remarkably, we observe a gain as large as 15 in the cavity transmission when the DQD energy level detuning is matched to the cavity frequency. These results will be discussed in the context of single atom lasing.[4] I will also describe recent progress towards reaching the strong-coupling limit in cavity-coupled Si DQDs. In collaboration with Manas Kulkarni, Yinyu Liu, Karl Petersson, George Stehlik, Jacob Taylor, and Hakan Tureci. We acknowledge support from the Sloan and Packard Foundations, ARO, DARPA, and NSF.
NASA Astrophysics Data System (ADS)
Lee, Woong; Yoo, Yo-Han; Shin, Hyunho; Myoung, Jae-Min
2005-05-01
Role of the composition of InxGa1-xAs strain-relief layer (SRL) in controlling the strain fields and consequent modification of band structures in a close-stacked multi-layer InAs/GaAs quantum dot (QD) system was investigated within the framework of continuum elasticity and model solid theory. It was predicted that strains in the QDs are significantly relieved in proportion to the In concentration in the InxGa1-xAs SRLs between InAs QD and GaAs cap layer. The relaxation of strains caused substantial shift of the conduction band edge in the QDs mainly by the relief of hydrostatic strain component resulting in narrower bandgap within the QDs with increasing In concentration. It is interpreted that such strain relaxation and subsequent band structure modifications are responsible for the experimentally observed redshift of photo-luminescence (PL) spectra elsewhere. Therefore, together with existing experimental work, it is confirmed that conduction band edges of QD systems can be tailored by the control of the SRL composition allowing more flexibility in bandgap engineering.
Spin-spin and spin-orbit interaction effects of two-electron quantum dots
NASA Astrophysics Data System (ADS)
Vaseghi, B.; Rezaei, G.; Taghizadeh, S. F.; Shahedi, Z.
2014-09-01
Simultaneous effects of spin-spin and spin-orbit interactions on the energy spectrum of a two-electron spherical quantum dot with parabolic confinement and under the influence of external electric and magnetic fields are investigated. We have calculated energy eigenvalues and eigenvectors of the system for different spin states. Results show that effects of spin-spin interactions are negligible in comparison with those of the spin-orbit interactions. Spin-orbit interaction splits energy levels and removes degeneracy of different spin states. Moreover it is seen that energy eigenvalues and levels splitting strongly depend on the external magnetic field and the dot dimensions.
A triple quantum dot based nano-electromechanical memory device
Pozner, R.; Lifshitz, E.; Peskin, U.
2015-09-14
Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.
Gate-controlled electromechanical backaction induced by a quantum dot.
Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi
2016-01-01
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter. PMID:27063939
Full counting statistics of quantum dot resonance fluorescence.
Matthiesen, Clemens; Stanley, Megan J; Hugues, Maxime; Clarke, Edmund; Atatüre, Mete
2014-01-01
The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097
Full counting statistics of quantum dot resonance fluorescence
Matthiesen, Clemens; Stanley, Megan J.; Hugues, Maxime; Clarke, Edmund; Atatüre, Mete
2014-01-01
The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding. PMID:24810097
Gate-controlled electromechanical backaction induced by a quantum dot
NASA Astrophysics Data System (ADS)
Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi
2016-04-01
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.
Gate-controlled electromechanical backaction induced by a quantum dot
Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi
2016-01-01
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter. PMID:27063939
A triple quantum dot based nano-electromechanical memory device
NASA Astrophysics Data System (ADS)
Pozner, R.; Lifshitz, E.; Peskin, U.
2015-09-01
Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, "ON" and "OFF" states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.
Coulomb interaction of acceptors in Cd1-xMnxTe/CdTe quantum dot
NASA Astrophysics Data System (ADS)
Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.
2014-04-01
The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd1-xMnxTe/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.
Linear and Nonlinear Optical Properties in Spherical Quantum Dots: Generalized Hulthén Potential
NASA Astrophysics Data System (ADS)
Onyeaju, M. C.; Idiodi, J. O. A.; Ikot, A. N.; Solaimani, M.; Hassanabadi, H.
2016-05-01
In this work, we studied the optical properties of spherical quantum dots confined in Hulthén potential with the appropriate centrifugal term included. The approximate solution of the bound state and wave functions were obtained from the Schrödinger wave equation by applying the factorization method. Also, we have used the density matrix formalism to investigate the linear and third-order nonlinear absorption coefficient and refractive index changes.
Electric control of the exciton fine structure in nonparabolic quantum dots
NASA Astrophysics Data System (ADS)
Welander, Erik; Burkard, Guido
2012-10-01
We show that the nonparabolic confinement potential is responsible for the nonmonotonic behavior and sign change of the exciton fine-structure splitting (FSS) in optically active self-assembled quantum dots. This insight is important for the theoretical understanding and practical control by electric fields of the quantum state of the emitted light from a biexciton cascade recombination process. We find that a hard-wall (box) confinement potential leads to a FSS that is in better agreement with experimentally measured FSS than a harmonic potential. We then show that a finite applied electric field can be used to remove the FSS entirely, thus allowing for the creation of maximally entangled photons, being vital to the growing field of quantum communication and quantum key distribution.
Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes
NASA Astrophysics Data System (ADS)
Weng, Qian-Chun; An, Zheng-Hua; Hou, Ying; Zhu, Zi-Qiang
2013-04-01
InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior, and a wide bistability (ΔV ~ 0.8 V) is observed in the negative differential resistance region. Based on an analytic model, we attribute the observed distinct bistability of a resonant tunneling diodes with quantum dots to the feedback dependence of energy of the electron-storing quantum dots on the tunneling current density. Meanwhile, we find that this wide bistable region can be modulated sensitively by light illumination and becomes narrower with increasing light intensity. Our results suggest that the present devices can be potentially used as sensitive photodetectors in optoelectronic fields.
Quantum Dots Microstructured Optical Fiber for X-Ray Detection
NASA Technical Reports Server (NTRS)
DeHaven, Stan; Williams, Phillip; Burke, Eric
2015-01-01
Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.
PREFACE: Quantum dots as probes in biology
NASA Astrophysics Data System (ADS)
Cieplak, Marek
2013-05-01
The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated
NASA Astrophysics Data System (ADS)
Horta-Piñeres, Sindi; Elizabeth Escorcia-Salas, G.; Mikhailov, I. D.; Sierra-Ortega, J.
2014-11-01
The energy spectrum of a positively charged exciton confined in vertically coupled type II quantum dots with different morphologies in the presence of the external magnetic field is studied. The effect of the quantum dot morphology on the curves of the lowest energy levels as functions of the magnetic field is analyzed. It is shown that a strong correlation presented in this system generates the Aharonov-Bohm oscillations of the lower energy levels similar to those in wide quantum ring. The novel curves of the trion energies dependences on the external magnetic field for the disk-like, lens-like, and cone-like structures are presented.
Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.
2010-05-03
The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN{sub x}) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure
NASA Astrophysics Data System (ADS)
Kurtze, H.; Bayer, M.
2016-07-01
Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock-Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.
NASA Astrophysics Data System (ADS)
Kushavah, Dushyant; Mohapatra, P. K.; Rustagi, K. C.; Bahadur, D.; Vasa, P.; Singh, B. P.
2015-05-01
We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ˜5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ˜597 to ˜746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ˜51 ns as compared to ˜6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.
Kushavah, Dushyant; Mohapatra, P. K.; Vasa, P.; Singh, B. P.; Rustagi, K. C.; Bahadur, D.
2015-05-15
We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ∼5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ∼597 to ∼746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ∼51 ns as compared to ∼6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.
Wet electron microscopy with quantum dots.
Timp, Winston; Watson, Nicki; Sabban, Alon; Zik, Ory; Matsudaira, Paul
2006-09-01
Wet electron microscopy (EM) is a new imaging method with the potential to allow higher spatial resolution of samples. In contrast to most EM methods, it requires little time to perform and does not require complicated equipment or difficult steps. We used this method on a common murine macrophage cell line, IC-21, in combination with various stains and preparations, to collect high resolution images of the actin cytoskeleton. Most importantly, we demonstrated the use of quantum dots in conjunction with this technique to perform light/electron correlation microscopy. We found that wet EM is a useful tool that fits into a niche between the simplicity of light microscopy and the high spatial resolution of EM. PMID:16989089
Multifunctional Quantum Dots for Personalized Medicine
Zrazhevskiy, Pavel; Gao, Xiaohu
2009-01-01
Successes in biomedical research and state-of-the-art medicine have undoubtedly improved the quality of life. However, a number of diseases, such as cancer, immunodeficiencies, and neurological disorders, still evade conventional diagnostic and therapeutic approaches. A transformation towards personalized medicine may help to combat these diseases. For this, identification of disease molecular fingerprints and their association with prognosis and targeted therapy must become available. Quantum dots (QDs), semiconductor nanocrystals with unique photo-physical properties, represent a novel class of fluorescence probes to address many of the needs of personalized medicine. This review outlines the properties of QDs that make them a suitable platform for advancing personalized medicine, examines several proof-of-concept studies showing utility of QDs for clinically relevant applications, and discusses current challenges in introducing QDs into clinical practice. PMID:20161004
Conductance through an array of quantum dots
NASA Astrophysics Data System (ADS)
Lobos, A. M.; Aligia, A. A.
2006-10-01
We propose a simple approach to study the conductance through an array of N interacting quantum dots, weakly coupled to metallic leads. Using a mapping to an effective site which describes the low-lying excitations and a slave-boson representation in the saddle-point approximation, we calculated the conductance through the system. Explicit results are presented for N=1 and N=3 : a linear array and an isosceles triangle. For N=1 in the Kondo limit, the results are in very good agreement with previous results obtained with numerical renormalization group. In the case of the linear trimer for odd N , when the parameters are such that electron-hole symmetry is induced, we obtain perfect conductance G0=2e2/h . The validity of the approach is discussed in detail.
Quantum dots as a possible oxygen sensor
NASA Astrophysics Data System (ADS)
Ziółczyk, Paulina; Kur-Kowalska, Katarzyna; Przybyt, Małgorzata; Miller, Ewa
Results of studies on optical properties of low toxicity quantum dots (QDs) obtained from copper doped zinc sulfate are discussed in the paper. The effect of copper admixture concentration and solution pH on the fluorescence emission intensity of QDs was investigated. Quenching of QDs fluorescence by oxygen was reported and removal of the oxygen from the environment by two methods was described. In the chemical method oxygen was eliminated by adding sodium sulfite, in the other method oxygen was removed from the solution using nitrogen gas. For elimination of oxygen by purging the solution with nitrogen the increase of fluorescence intensity with decreasing oxygen concentration obeyed Stern-Volmer equation indicating quenching. For the chemical method Stern-Volmer equation was not fulfilled. The fluorescence decays lifetimes were determined and the increase of mean lifetimes at the absence of oxygen support hypothesis that QDs fluorescence is quenched by oxygen.
Protease-activated quantum dot probes.
Chang, Emmanuel; Miller, Jordan S; Sun, Jiantang; Yu, William W; Colvin, Vicki L; Drezek, Rebekah; West, Jennifer L
2005-09-01
We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker. PMID:16039606
Semiconductor quantum dot-inorganic nanotube hybrids.
Kreizman, Ronen; Schwartz, Osip; Deutsch, Zvicka; Itzhakov, Stella; Zak, Alla; Cohen, Sidney R; Tenne, Reshef; Oron, Dan
2012-03-28
A synthetic route for preparation of inorganic WS(2) nanotube (INT)-colloidal semiconductor quantum dot (QD) hybrid structures is developed, and transient carrier dynamics on these hybrids are studied via transient photoluminescence spectroscopy utilizing several different types of QDs. Measurements reveal efficient resonant energy transfer from the QDs to the INT upon photoexcitation, provided that the QD emission is at a higher energy than the INT direct gap. Charge transfer in the hybrid system, characterized using QDs with band gaps below the INT direct gap, is found to be absent. This is attributed to the presence of an organic barrier layer due to the relatively long-chain organic ligands of the QDs under study. This system, analogous to carbon nanotube-QD hybrids, holds potential for a variety of applications, including photovoltaics, luminescence tagging and optoelectronics. PMID:22354096
Luminescence studies of individual quantum dot photocatalysts.
Amirav, Lilac; Alivisatos, A Paul
2013-09-01
Using far-field optical microscopy we report the first measurements of photoluminescence from single nanoparticle photocatalysts. Fluence-dependent luminescence is investigated from metal-semiconductor heterojunction quantum dot catalysts exposed to a variety of environments, ranging from gaseous argon to liquid water containing a selection of hole scavengers. The catalysts each exhibit characteristic nonlinear fluence dependence. From these structurally and environmentally sensitive trends, we disentangle the separate rate-determining steps in each particle across the very wide range of time scales, which follow the initial light absorption process. This information will significantly benefit the design of effective artificial photocatalytic systems for renewable direct solar-to-fuel energy conversion. PMID:23895591
Quantum dots: synthesis, bioapplications, and toxicity
2012-01-01
This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials. PMID:22929008
Spectroscopic behavior of bioconjugated quantum dots
NASA Astrophysics Data System (ADS)
Chornokur, G.; Ostapenko, S.; Emirov, Yu; Korsunska, N. E.; Sellers, T.; Phelan, C.
2008-07-01
We report on a short-wavelength, 'blue' spectral shift of the photoluminescence (PL) spectrum in CdSeTe/ZnS core/shell quantum dots (QDs) caused by bioconjugation with several monoclonal cancer-related antibodies (ABs). Scanning PL spectroscopy was performed on samples dried on solid substrates at various temperatures. The influence of the AB chemical origin on the PL spectral shift was observed. The QD-AB conjugation reaction was confirmed using the agarose gel electrophoresis technique. The spectral shift was strongly increased and the process facilitated when the samples were dried above room temperature. The PL spectroscopic mapping revealed a profile of the PL spectral shift across the dried QD-AB spot. A mechanism of the blue shift is attributed to changes in the QD electronic energy levels caused by a local stress applied to the bioconjugated QD.
Building devices from colloidal quantum dots.
Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V
2016-08-26
The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. PMID:27563099
Wavefunction dynamics in a quantum-dot electron pump under a high magnetic field
NASA Astrophysics Data System (ADS)
Ryu, Sungguen; Kataoka, Masaya; Sim, Heung-Sun
2015-03-01
A quantum-dot electron pump, formed and operated by applying time-dependent potential barriers to a two dimensional electron gas system, provides a promising redefinition of ampere. The pump operation consists of capturing an electron from a reservoir into a quantum dot and ejecting it to another reservoir. The capturing process has been theoretically understood by a semi-classical treatment of the tunneling between the dot and reservoir. But the dynamics of the wavefunction of the captured electron in the ejection process has not been theoretically addressed, although it is useful for enhancing pump accuracy and for utilizing the pump as a single-electron source for mesoscopic quantum electron devices. We study the dynamics under a strong magnetic field that leads to magnetic confinement of the captured electron, which dominates over the electrostatic confinement of the dot. We find that the wave packet of the captured electron has the Gaussian form with the width determined by the strength of the magnetic field, and that the time evolution of the packet follows the classical drift motion, with maintaining the Gaussian form. We discuss the possible signatures of the wave packet dynamics in experiments.
Quantum theory of dynamic nuclear polarization in quantum dots
NASA Astrophysics Data System (ADS)
Economou, Sophia; Barnes, Edwin
2013-03-01
Nuclear spins play a major role in the dynamics of spin qubits in III-V semiconductor quantum dots. Although the hyperfine interaction between nuclear and electron (or hole) spins is typically viewed as the leading source of decoherence in these qubits, understanding how to experimentally control the nuclear spin polarization can not only ameliorate this problem, but in fact turn the nuclear spins into a valuable resource for quantum computing. Beyond extending decoherence times, control of this polarization can enable universal quantum computation as shown in singlet-triplet qubits and, in addition, offers the possibility of repurposing the nuclear spins into a robust quantum memory. In, we took a first step toward taking advantage of this resource by developing a general, fully quantum theory of non-unitary electron-nuclear spin dynamics with a periodic train of delta-function pulses as the external control driving the electron spin. Here, we extend this approach to other types of controls and further expand on the predictions and physical insights that emerge from the theory.
Hybrid entanglement in a triple-quantum-dot shuttle device
NASA Astrophysics Data System (ADS)
Mora, J.; Cota, E.; Rojas, F.
2014-10-01
We study the H3×N hybrid entanglement between charge and vibrational modes in a triple-quantum-dot shuttle system. Three quantum dots are linearly connected, with the outer dots fixed and the central dot oscillating, described as a quantum harmonic oscillator with oscillation modes that are entangled with the electronic states of the quantum dots. The entangled states are characterized by the Schmidt number as a function of the parameters of the system: detuning and inverse tunneling length. We show that at steady state, as a function of detuning, the excited states of lower energy present Bell-type entanglement 2×N, with the participation of two quantum dots, while the more energetic excited states present 3×N entanglement, with the participation of three quantum dots. In the stationary regime, we find qualitative relationships between the maxima of the electronic current and the Schmidt number. Also, the time evolution of the degree of entanglement for a particular initial condition is studied in the presence of a time-dependent electric field and we evaluate the effects on entanglement of the condition of coherent destruction of tunneling.
Two-dimensional probe absorption in coupled quantum dots
NASA Astrophysics Data System (ADS)
Liu, Ningwu; Zhang, Yan; Kang, Chengxian; Wang, Zhiping; Yu, Benli
2016-07-01
We investigate the two-dimensional (2D) probe absorption in coupled quantum dots. It is found that, due to the position-dependent quantum interference effect, the 2D optical absorption spectrum can be easily controlled via adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state quantum communication.
AA-stacked bilayer graphene quantum dots in magnetic field
NASA Astrophysics Data System (ADS)
Belouad, Abdelhadi; Zahidi, Youness; Jellal, Ahmed
2016-05-01
By applying the infinite-mass boundary condition, we analytically calculate the confined states and the corresponding wave functions of AA-stacked bilayer graphene (BLG) quantum dots (QDs) in the presence of an uniform magnetic field B. It is found that the energy spectrum shows two set of levels, which are the double copies of the energy spectrum for single layer graphene, shifted up–down by +γ and -γ , respectively. However, the obtained spectrum exhibits different symmetries between the electron and hole states as well as the intervalley symmetries. It is noticed that, the applied magnetic field breaks all symmetries, except one related to the intervalley electron–hole symmetry, i.e. {E}{{e}}(τ ,m)=-{E}{{h}}(τ ,m). Two different regimes of confinement are found: the first one is due to the infinite-mass barrier at weak B and the second is dominated by the magnetic field as long as B is large. We numerically investigated the basics features of the energy spectrum to show the main similarities and differences with respect to monolayer graphene, AB-stacked BLG and semiconductor QDs. Dedicated to Professor Dr Hachim A Yamani on the occasion of his 70th birthday.
Quadrupole second harmonic generation and sum-frequency generation in ZnO quantum dots
Maikhuri, Deepti; Purohit, S. P. Mathur, K. C.
2015-04-15
The second harmonic generation (SHG) and the sum frequency generation (SFG) processes are investigated in the conduction band states of the singly charged ZnO quantum dot (QD) embedded in the HfO{sub 2}, and the AlN matrices. With two optical fields of frequency ω{sub p} and ω{sub q} incident on the dot, we study the variation with frequency of the second order nonlinear polarization resulting in SHG and SFG, through the electric dipole and the electric quadrupole interactions of the pump fields with the electron in the dot. We obtain enhanced value of the second order nonlinear susceptibility in the dot compared to the bulk. The effective mass approximation with the finite confining barrier is used for obtaining the energy and wavefunctions of the quantized confined states of the electron in the conduction band of the dot. Our results show that both the SHG and SFG processes depend on the dot size, the surrounding matrix and the polarization states of the pump beams.
Engineering of perturbation effects in onion-like heteronanocrystal quantum dot-quantum well
NASA Astrophysics Data System (ADS)
SalmanOgli, A.; Rostami, R.
2013-10-01
In this article, the perturbation influences on optical characterization of quantum dot and quantum dot-quantum well (modified quantum dot) heteronanocrystal is investigated. The original aim of this article is to investigate the quantum dot-quantum well heteronanocrystal advantages and disadvantages, when used as a functionalized particle in biomedical applications. Therefore, all of the critical features of quantum dots are fundamentally studied and their influences on optical properties are simulated. For the first time, the perturbation effects on optical characteristics are observed in the quantum dot-quantum well heteronanocrystals by 8-band K.P theory. The impact of perturbation on optical features such as photoluminescence and shifting of wavelength is studied. The photoluminescence and operation wavelength of quantum dots play a vital role in biomedical applications, where their absorption and emission in biological assays are altered by shifting of wavelength. Furthermore, in biomedical applications, by tuning the emission wavelengths of the quantum dot into far-red and near-infrared ranges, non-invasive in-vivo imaging techniques have been easily developed. In this wavelength window, tissue absorption, scattering and auto-fluorescence intensities have minimum quantities; thus fixing or minimizing of wavelength shifting can be regarded as an important goal which is investigated in this work.
NASA Astrophysics Data System (ADS)
Goswami, Mrinmoy; Ghosh, Ranajit; Maruyama, Takahiro; Meikap, Ajit Kumar
2016-02-01
A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7-4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.
Quantum computing with quantum dots using the Heisenberg exchange interaction
NASA Astrophysics Data System (ADS)
Dewaele, Nick J.
One of the most promising systems for creating a working quantum computer is the triple quantum dots in a linear semiconductor. One of the biggest advantages is that we are able to perform Heisenberg exchange gates on the physical qubits. These exchanges are both fast and relatively low energy. Which means that they would be excellent for producing fast and accurate operations. In order to prevent leakage errors we use a 3 qubit DFS to encode a logical qubit. Here we determine the theoretical time dependent affects of applying the Heisenberg exchange gates in the DFS basis as well as the effect of applying multiple exchange gates at the same time. we also find that applying two heisenberg exchange gates at the same time is an effective way of implementing a leakage elimination operator.
Effects of multiple organic ligands on size uniformity and optical properties of ZnSe quantum dots
Archana, J.; Navaneethan, M.; Hayakawa, Y.; Ponnusamy, S.; Muthamizhchelvan, C.
2012-08-15
Highlights: ► Highly monodispersed ZnSe quantum dots have been synthesized by wet chemical route. ► Strong quantum confinement effect have been observed in ∼ 4 nm ZnSe quantum dots. ► Enhanced ultraviolet near band emission have been obtained using long chain polymer. -- Abstract: The effects of multi-ligands on the formation and optical transitions of ZnSe quantum dots have been investigated. The dots are synthesized using 3-mercapto-1,2-propanediol and polyvinylpyrrolidone ligands, and have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV–visible absorption spectroscopy, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy. TEM reveals high monodispersion with an average size of 4 nm. Polymer-stabilized, organic ligand-passivated ZnSe quantum dots exhibit strong UV emission at 326 nm and strong quantum confinement in the UV–visible absorption spectrum. Uniform size and suppressed surface trap emission are observed when the polymer ligand is used. The possible growth mechanism is discussed.
Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
NASA Astrophysics Data System (ADS)
Altaisky, Mikhail V.; Zolnikova, Nadezhda N.; Kaputkina, Natalia E.; Krylov, Victor A.; Lozovik, Yurii E.; Dattani, Nikesh S.
2016-02-01
We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.
NASA Astrophysics Data System (ADS)
Thibert, Arthur Joseph, III
Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh
Long-distance coherent coupling in a quantum dot array.
Braakman, F R; Barthelemy, P; Reichl, C; Wegscheider, W; Vandersypen, L M K
2013-06-01
Controlling long-distance quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-distance correlations requires sequential local operations. Here, we show that two distant sites can be tunnel-coupled directly. The coupling is mediated by virtual occupation of an intermediate site, with a strength that is controlled via the energy detuning of this site. It permits a single charge to oscillate coherently between the outer sites of a triple dot array without passing through the middle, as demonstrated through the observation of Landau-Zener-Stückelberg interference. The long-distance coupling significantly improves the prospects of fault-tolerant quantum computation using quantum dot arrays, and opens up new avenues for performing quantum simulations in nanoscale devices. PMID:23624695
NASA Astrophysics Data System (ADS)
Vaseghi, B.; Sadri, M.; Rezaei, G.; Gharaati, A.
2015-01-01
In this paper simultaneous effects of pressure, temperature, external electric field and laser radiation on the optical rectification and third harmonic generation of a spherical quantum dot with parabolic confinement and dressed impurity are studied. By means of matrix diagonalization technique, energy eigenvalues and functions are evaluated and used to find the optical rectification coefficient and third harmonic generation of the system via density operator method. It is shown that these nonlinear optical quantities strongly depend on pressure, temperature, electric field, confinement frequency and dressing laser intensity. Obvious effects of these external factors propose new facilities with different effects to control nonlinear optical properties of such systems.
Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells.
Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu
2016-12-01
Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells. PMID:26781285
Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells
NASA Astrophysics Data System (ADS)
Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu
2016-01-01
Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells.
Generation of singlet oxygen and other radical species by quantum dot and carbon dot nanosensitizers
NASA Astrophysics Data System (ADS)
Generalov, Roman; Christensen, Ingeborg L.; Chen, Wei; Sun, Ya-Ping; Kristensen, Solveig; Juzenas, Petras
2009-06-01
Medicinal applications of luminescent semiconductor quantum dots are of growing interest. In spite of the fact that their fabrication and imaging applications have been extensively investigated for the last decade, very little is documented on photodynamic action of quantum dots. In this study we demonstrate generation of singlet oxygen and other radical species upon exposure of quantum dots to blue light and therapeutic red light. Extent of radical production can be readily modified by antioxidants. Lay and scientific communities are two sites concerning potential hazards and enthusiastic applications of nanotechnology. Synthesis of quantum dots composed of less toxic materials is of great interest. A new candidate is a ubiquitous element carbon, which on nanoscale exhibits strong photoluminescence.
Heterovalent cation substitutional doping for quantum dot homojunction solar cells
Stavrinadis, Alexandros; Rath, Arup K.; de Arquer, F. Pelayo García; Diedenhofen, Silke L.; Magén, César; Martinez, Luis; So, David; Konstantatos, Gerasimos
2013-01-01
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%. PMID:24346430
What future for quantum dot-based light emitters?
NASA Astrophysics Data System (ADS)
Nurmikko, Arto
2015-12-01
Synthesis of semiconductor colloidal quantum dots by low-cost, solution-based methods has produced an abundance of basic science. Can these materials be transformed to high-performance light emitters to disrupt established photonics technologies, particularly semiconductor lasers?
Electro-absorption of silicene and bilayer graphene quantum dots
NASA Astrophysics Data System (ADS)
Abdelsalam, Hazem; Talaat, Mohamed H.; Lukyanchuk, Igor; Portnoi, M. E.; Saroka, V. A.
2016-07-01
We study numerically the optical properties of low-buckled silicene and AB-stacked bilayer graphene quantum dots subjected to an external electric field, which is normal to their surface. Within the tight-binding model, the optical absorption is calculated for quantum dots, of triangular and hexagonal shapes, with zigzag and armchair edge terminations. We show that in triangular silicene clusters with zigzag edges a rich and widely tunable infrared absorption peak structure originates from transitions involving zero energy states. The edge of absorption in silicene quantum dots undergoes red shift in the external electric field for triangular clusters, whereas blue shift takes place for hexagonal ones. In small clusters of bilayer graphene with zigzag edges the edge of absorption undergoes blue/red shift for triangular/hexagonal geometry. In armchair clusters of silicene blue shift of the absorption edge takes place for both cluster shapes, while red shift is inherent for both shapes of the bilayer graphene quantum dots.
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.
2010-04-13
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.
2008-07-29
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
Energy levels of hybrid monolayer-bilayer graphene quantum dots
NASA Astrophysics Data System (ADS)
Mirzakhani, M.; Zarenia, M.; Ketabi, S. A.; da Costa, D. R.; Peeters, F. M.
2016-04-01
Often real samples of graphene consist of islands of both monolayer and bilayer graphene. Bound states in such hybrid quantum dots are investigated for (i) a circular single-layer graphene quantum dot surrounded by an infinite bilayer graphene sheet and (ii) a circular bilayer graphene quantum dot surrounded by an infinite single-layer graphene. Using the continuum model and applying zigzag boundary conditions at the single-layer-bilayer graphene interface, we obtain analytical results for the energy levels and the corresponding wave spinors. Their dependence on perpendicular magnetic and electric fields are studied for both types of quantum dots. The energy levels exhibit characteristics of interface states, and we find anticrossings and closing of the energy gap in the presence of a bias potential.
Entanglement switching via the Kondo effect in triple quantum dots
NASA Astrophysics Data System (ADS)
Tooski, S. B.; Bułka, Bogdan R.; Žitko, Rok; Ramšak, Anton
2014-06-01
We consider a triple quantum dot system in a triangular geometry with one of the dots connected to metallic leads. Using Wilson's numerical renormalization group method, we investigate quantum entanglement and its relation to the thermodynamic and transport properties in the regime where each of the dots is singly occupied on average, but with non-negligible charge fluctuations. It is shown that even in the regime of significant charge fluctuations the formation of the Kondo singlets induces switching between separable and perfectly entangled states. The quantum phase transition between unentangled and entangled states is analyzed quantitatively and the corresponding phase diagram is explained by exactly solvable spin model. In the framework of an effective model we also explain smearing of the entanglement transition for cases when the symmetry of the triple quantum dot system is relaxed.
Spin Qubits with Semiconductor Quantum Dots
NASA Astrophysics Data System (ADS)
Tarucha, Seigo; Yamamoto, Michihisa; Oiwa, Akira; Choi, Byung-Soo; Tokura, Yasuhiro
This section describes recent progresses on the research of spin qubits realized in semiconductor quantum dot (QD) systems. After we argue the scheme of initialization and detection of individual spin states, we discuss the key idea of the universal gates constituted with QDs proposed by D. Loss and D. P. DiVincenzo. In order to achieve universal quantum gate operations, we need single qubit coherent manipulations and two qubit controlled-NOT or control-Z gates. For the first type of gate, instead of the standard rf magnetic field driven electron spin resonance (ESR), we proposed and implemented electric dipole induced spin resonance (EDSR), which has various advantages over ESR, including low dissipation, individual access to the spins and integrability. We describes recent progress in the fast Rabi oscillations. The second type of gate can be realized by the exchange coupling between nearby QDs. We also discuss the experiments combining single- and two-qubit operations. Finally, we argue the progress of the coupling of the spins in QDs with the "flying qubits", namely, photons of visible or microwave and itinerant electrons in the wave guides.
Multiple Energy Exciton Shelves in Quantum-Dot-DNA Nanobioelectronics.
Goodman, Samuel M; Singh, Vivek; Ribot, Josep Casamada; Chatterjee, Anushree; Nagpal, Prashant
2014-11-01
Quantum dots (QDs) are semiconductor nanocrystallites with multiple size-dependent quantum-confined states that are being explored for utilizing broadband radiation. While DNA has been used for the self-assembly of nanocrystals, it has not been investigated for the formation of simultaneous conduction pathways for transporting multiple energy charges or excitons. These exciton shelves can be formed by coupling the conduction band, valence band, and hot-carrier states in QDs with different HOMO-LUMO levels of DNA nucleobases, resulting from varying degrees of conjugation in the nucleobases. Here we present studies on the electronic density of states in four naturally occurring nucleobases (guanine, thymine, cytosine, and adenine), which energetically couple to quantized states in semiconductor QDs. Using scanning tunneling spectroscopy of single nanoparticle-DNA constructs, we demonstrate composite DOS of chemically coupled DNA oligonucleotides and cadmium chalcogenide QDs (CdS, CdSe, CdTe). While perfectly aligned CdTe QD-DNA states lead to exciton shelves for multiple energy charge transport, mismatched energy levels in CdSe QD-DNA introduce intrabandgap states that can lead to charge trapping and recombination. Although further investigations are required to study the rates of charge transfer, recombination, and back-electron transfer, these results can have important implications for the development of a new class of nanobioelectronics and biological transducers. PMID:26278768
Chlorine doped graphene quantum dots: Preparation, properties, and photovoltaic detectors
Zhao, Jianhong; Xiang, Jinzhong; Tang, Libin Ji, Rongbin Yuan, Jun; Zhao, Jun; Yu, Ruiyun; Tai, Yunjian; Song, Liyuan
2014-09-15
Graphene quantum dots (GQDs) are becoming one of the hottest advanced functional materials because of the opening of the bandgap due to quantum confinement effect, which shows unique optical and electrical properties. The chlorine doped GQDs (Cl-GQDs) have been fabricated by chemical exfoliation of HCl treated carbon fibers (CFs), which were prepared from degreasing cotton through an annealing process at 1000 °C for 30 min. Raman study shows that both G and 2D peaks of GQDs may be redshifted (softened) by chlorine doping, leading to an n-type doping. The first vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbing and electron-accepting roles for (Cl)-GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as ∼10{sup 5} at room temperature using a 405 nm laser irradiation under the reverse bias voltage. The study expands the application of (Cl)-GQDs to the important optoelectronic detection devices.
Imaging cellular membrane potential through ionization of quantum dots
NASA Astrophysics Data System (ADS)
Rowland, Clare E.; Susumu, Kimihiro; Stewart, Michael H.; Oh, Eunkeu; Mäkinen, Antti J.; O'Shaughnessy, Thomas J.; Kushto, Gary; Wolak, Mason A.; Erickson, Jeffrey S.; Efros, Alexander L.; Huston, Alan L.; Delehanty, James B.
2016-03-01
Recent interest in quantum dots (QDs) stems from the plethora of potential applications that arises from their tunable absorption and emission profiles, high absorption cross sections, resistance to photobleaching, functionalizable surfaces, and physical robustness. The emergent use of QDs in biological imaging exploits these and other intrinsic properties. For example, quantum confined Stark effect (QCSE), which describes changes in the photoluminescence (PL) of QDs driven by the application of an electric field, provides an inherent means of detecting changes in electric fields by monitoring QD emission and thus points to a ready mean of imaging membrane potential (and action potentials) in electrically active cells. Here we examine the changing PL of various QDs subjected to electric fields comparable to those found across a cellular membrane. By pairing static and timeresolved PL measurements, we attempt to understand the mechanism driving electric-field-induced PL quenching and ultimately conclude that ionization plays a substantial role in initiating PL changes in systems where QCSE has traditionally been credited. Expanding on these findings, we explore the rapidity of response of the QD PL to applied electric fields and demonstrate changes amply able to capture the millisecond timescale of cellular action potentials.
Quantum Dots for In Vivo Small-Animal Imaging
Bentolila, Laurent A.; Ebenstein, Yuval; Weiss, Shimon
2011-01-01
Nanotechnology is poised to transform research, prevention, and treatment of cancer through the development of novel diagnostic imaging methods and targeted therapies. In particular, the use of nanoparticles for imaging has gained considerable momentum in recent years. This review focuses on the growing contribution of quantum dots (QDs) for in vivo imaging in small-animal models. Fluorescent QDs, which are small nanocrystals (1–10 nm) made of inorganic semiconductor materials, possess several unique optical properties best suited for in vivo imaging. Because of quantum confinement effects, the emission color of QDs can be precisely tuned by size from the ultraviolet to the near-infrared. QDs are extremely bright and photostable. They are also characterized by a wide absorption band and a narrow emission band, which makes them ideal for multiplexing. Finally, the large surface area of QDs permits the assembly of various contrast agents to design multimodality imaging probes. To date, biocompatible QD conjugates have been used successfully for sentinel lymph node mapping, tumor targeting, tumor angiogenesis imaging, and metastatic cell tracking. Here we consider these novel breakthroughs in light of their potential clinical applications and discuss how QDs might offer a suitable platform to unite disparate imaging modalities and provide information along a continuum of length scales. PMID:19289434
Fluorinated graphene films with graphene quantum dots for electronic applications
NASA Astrophysics Data System (ADS)
Antonova, I. V.; Nebogatikova, N. A.; Prinz, V. Ya.
2016-06-01
This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier parameters between GQDs) is suggested. An increase in the degree of functionalization leads to a decrease in GQD size, the removal of the GQD effect on carrier transport, and the relaxation of non-equilibrium charge. The study of the electronic properties of FG films with GQDs has revealed a unipolar resistive switching effect in the films with a relatively high degree of fluorination and a high current modulation (up to ON/OFF ˜ 104-105) in transistor-like structures with a lower degree of fluorination. 2D films with GQDs are believed to have considerable potential for various electronic applications (nonvolatile memory, 2D connections with optical control and logic elements).
Electron transport through individual Ge self-assembled quantum dots on Si
NASA Astrophysics Data System (ADS)
Chung, Hung-Chin; Chu, Wen-Huei; Liu, Chuan-Pu
2006-08-01
Electrical properties of self-assembled quantum dots have been the subject of intensive research due to quantum confinement. Here the authors report on the fabrication of Ge quantum dots (QDs) onto Si (100) by ultrahigh-vacuum ion beam sputtering and the electrical properties of individual QDs. Transmission electron microscopy images show that samples with completely incoherent or coherent semispherical islands can be produced under different ion energies. The current-voltage (I-V) characteristics with conductive atomic force microscopy at room temperature. exhibit linear behavior at low bias and nonlinear behavior at large bias from coherent islands, whereas the staircase structures are clearly observed in the I-V curve from incoherent islands, which are attributed to electron tunneling through the quantized energy levels of a single Ge QD.
Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate
NASA Technical Reports Server (NTRS)
Qiu, Y.; Uhl, D.
2002-01-01
InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Coherent radiation by quantum dots and magnetic nanoclusters
Yukalov, V. I.; Yukalova, E. P.
2014-03-31
The assemblies of either quantum dots or magnetic nanoclusters are studied. It is shown that such assemblies can produce coherent radiation. A method is developed for solving the systems of nonlinear equations describing the dynamics of such assemblies. The method is shown to be general and applicable to systems of different physical nature. Despite mathematical similarities of dynamical equations, the physics of the processes for quantum dots and magnetic nanoclusters is rather different. In a quantum dot assembly, coherence develops due to the Dicke effect of dot interactions through the common radiation field. For a system of magnetic clusters, coherence in the spin motion appears due to the Purcell effect caused by the feedback action of a resonator. Self-organized coherent spin radiation cannot arise without a resonator. This principal difference is connected with the different physical nature of dipole forces between the objects. Effective dipole interactions between the radiating quantum dots, appearing due to photon exchange, collectivize the dot radiation. While the dipolar spin interactions exist from the beginning, yet before radiation, and on the contrary, they dephase spin motion, thus destroying the coherence of moving spins. In addition, quantum dot radiation exhibits turbulent photon filamentation that is absent for radiating spins.
NASA Astrophysics Data System (ADS)
Gustin, C.; Faniel, S.; Hackens, B.; Melinte, S.; Shayegan, M.; Bayot, V.
2005-04-01
Using two-dimensional electron gases (2DEGs) confined to wide and narrow quantum wells, we study the magnetoconductance of ballistic quantum dots as a function of the well width and the tilt angle of the magnetic field B with respect to the 2DEG. Both the wide and narrow quantum well dots feature magnetoconductance fluctuations (MCFs) at intermediate tilt angles, due to the finite thickness of the electron layer and the field-induced orbital effect. As B approaches a strictly parallel configuration, a saturation of the MCFs’ spectral distribution is observed, combined with the persistence of a limited number of frequency components in the case of the narrow quantum well dot. It is found that the onset of saturation strongly depends on the width of the confining well. Using the results of self-consistent Poisson-Schrödinger simulations, the magnetoconductance is rescaled as a function of the Fermi level in the 2DEG. We perform a power spectrum analysis of the parallel field-induced MCFs in the energy space and find a good agreement with theoretical predictions.
Uchida, Takafumi Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira
2015-02-28
Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD.
Quantum Phase Transitions in Cavity Coupled Dot systems
NASA Astrophysics Data System (ADS)
Kasisomayajula, Vijay; Russo, Onofrio
2011-03-01
We investigate a Quantum Dot System, in which the transconductance, in part, is due to spin coupling, with each dot subjected to a biasing voltage. When this system is housed in a QED cavity, the cavity dot coupling alters the spin coupling of the coupled dots significantly via the Purcell Effect. In this paper we show the extent to which one can control the various coupling parameters: the inter dot coupling, the individual dots coupling with the cavity and the coupled dots coupling with the cavity as a single entity. We show that the dots coupled to each other and to the cavity, the spin transport can be controlled selectively. We derive the conditions for such control explicitly. Further, we discuss the Quantum phase transition effects due to the charge and spin transport through the dots. The electron transport through the dots, electron-electron spin interaction and the electron-photon interaction are treated using the Non-equilibrium Green's Function Formalism. http://publish.aps.org/search/field/author/Trif_Mircea (Trif Mircea), http://publish.aps.org/search/field/author/Golovach_Vitaly_N (Vitaly N. Golovach), and http://publish.aps.org/search/field/author/Loss_Daniel (Daniel Loss), Phys. Rev. B 75, 085307 (2007)
Interaction effects on the tunneling of electron-hole pairs in coupled quantum dots
NASA Astrophysics Data System (ADS)
Guerrero, Hector M.; Cocoletzi, Gregorio H.; Ulloa, Sergio E.
2001-03-01
The transit time of carriers is beginning to be an important parameter in the physical operation of semiconductor quantum dot `devices'. In the present work, we study the coherent propagation of electron-hole pairs in coupled self-assembled quantum dots in close proximity. These systems, achieved experimentally in a number of different geometries, have been recently implemented as a novel storage of optical information that may give rise to smart pixel technology in the near future [1]. Here, we apply an effective mass hamiltonian approach and solve numerically the time dependent Schroedinger equation of a system of photo-created electron-hole pairs in the dots. Our approach takes into account both Coulomb interactions and confinement effects. The time evolution is investigated in terms of the structural parameters for typical InAs-GaAs dots. Different initial conditions are considered, reflecting the basic processes that would take place in these experiments. We study the probabilities of finding the electron and hole in either the same or adjacent quantum dot, and study carefully the role of interactions in this behavior. [1] T. Lundstrom, W. Schoenfeld, H. Lee, and P. M. Petroff, Science 286, 2312 (1999).
Whispering-gallery mode microcavity quantum-dot lasers
Kryzhanovskaya, N V; Maximov, M V; Zhukov, A E
2014-03-28
This review examines axisymmetric-cavity quantum-dot microlasers whose emission spectrum is determined by whisperinggallery modes. We describe the possible designs, fabrication processes and basic characteristics of the microlasers and demonstrate the possibility of lasing at temperatures above 100 °C. The feasibility of creating multichannel optical sources based on a combination of a broadband quantum-dot laser and silicon microring modulators is discussed. (review)
Ultrafast optical properties of lithographically defined quantum dot amplifiers
Miaja-Avila, L.; Verma, V. B.; Mirin, R. P.; Silverman, K. L.; Coleman, J. J.
2014-02-10
We measure the ultrafast optical response of lithographically defined quantum dot amplifiers at 40 K. Recovery of the gain mostly occurs in less than 1 picosecond, with some longer-term transients attributable to carrier heating. Recovery of the absorption proceeds on a much longer timescale, representative of relaxation between quantum dot levels and carrier recombination. We also measure transparency current-density in these devices.
Los Alamos Quantum Dots for Solar, Display Technology
Klimov, Victor
2015-04-13
Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.
Dynamical symmetries in Kondo tunneling through complex quantum dots.
Kuzmenko, T; Kikoin, K; Avishai, Y
2002-10-01
Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4). PMID:12366008
Interaction of solitons with a string of coupled quantum dots
NASA Astrophysics Data System (ADS)
Kumar, Vijendra; Swami, O. P.; Taneja, S.; Nagar, A. K.
2016-05-01
In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.
Controlled Photon Switch Assisted by Coupled Quantum Dots
Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun
2015-01-01
Quantum switch is a primitive element in quantum network communication. In contrast to previous switch schemes on one degree of freedom (DOF) of quantum systems, we consider controlled switches of photon system with two DOFs. These controlled photon switches are constructed by exploring the optical selection rules derived from the quantum-dot spins in one-sided optical microcavities. Several double controlled-NOT gate on different joint systems are greatly simplified with an auxiliary DOF of the controlling photon. The photon switches show that two DOFs of photons can be independently transmitted in quantum networks. This result reduces the quantum resources for quantum network communication. PMID:26095049
Si quantum dot structures and their applications
NASA Astrophysics Data System (ADS)
Shcherbyna, L.; Torchynska, T.
2013-06-01
This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.
Quantum computing over long time scales in a singly charged quantum dot
NASA Astrophysics Data System (ADS)
Sun, Bo
In this thesis, we will study the continuous wave optical spectroscopy of self-assembled quantum dots (SAQDs), focusing on the use of these dots toward quantum computing and information processing applications. Probing the strong field interaction between an intense optical pump beam and a neutral quantum dot will reveal Autler-Townes splitting and Mollow absorption spectrum. The presence of these two phenomenon confirm the isolated nature of the exciton trapped in the quantum dot and the suppression of many-body physics due to exciton confinement. This curbs the decoherence caused by exciton-exciton interactions in higher dimensional heterostructures. After confirming the atom-like nature of the SAQD, we then charge the SAQD with a single electron and use the electron spin as our qubit. By applying a magnetic field perpendicular to the sample growth direction, we turn on the spin flip Raman transitions and create two lambda (Λ) systems that can be used to coherently manipulate the spin. A single laser resonant with one of the transitions can quickly initialize the spin state via optical pumping while two lasers, one on each leg of the lambda, can initialize the spin into an arbitrary superposition state through coherent population trapping. The developed dark state spectroscopy is then used to demonstrate interaction between the optically generated hole spin with the background nuclear spins. This hole assisted dynamic nuclear polarization creates a feedback mechanism which locks the nuclear field to the laser detunings and suppresses nuclear spin fluctuations. We use dark state spectroscopy to measure a two orders of magnitude increase of the electron spin coherence time, a result of the narrowing of the nuclear field distribution. Furthermore, we find that this nuclear spin narrowing can persist in the dark, without laser interaction, for well over 1s even in the presence of a fluctuating electron charge and electron spin polarization. We have opened the door
Quantum computation: algorithms and implementation in quantum dot devices
NASA Astrophysics Data System (ADS)
Gamble, John King
In this thesis, we explore several aspects of both the software and hardware of quantum computation. First, we examine the computational power of multi-particle quantum random walks in terms of distinguishing mathematical graphs. We study both interacting and non-interacting multi-particle walks on strongly regular graphs, proving some limitations on distinguishing powers and presenting extensive numerical evidence indicative of interactions providing more distinguishing power. We then study the recently proposed adiabatic quantum algorithm for Google PageRank, and show that it exhibits power-law scaling for realistic WWW-like graphs. Turning to hardware, we next analyze the thermal physics of two nearby 2D electron gas (2DEG), and show that an analogue of the Coulomb drag effect exists for heat transfer. In some distance and temperature, this heat transfer is more significant than phonon dissipation channels. After that, we study the dephasing of two-electron states in a single silicon quantum dot. Specifically, we consider dephasing due to the electron-phonon coupling and charge noise, separately treating orbital and valley excitations. In an ideal system, dephasing due to charge noise is strongly suppressed due to a vanishing dipole moment. However, introduction of disorder or anharmonicity leads to large effective dipole moments, and hence possibly strong dephasing. Building on this work, we next consider more realistic systems, including structural disorder systems. We present experiment and theory, which demonstrate energy levels that vary with quantum dot translation, implying a structurally disordered system. Finally, we turn to the issues of valley mixing and valley-orbit hybridization, which occurs due to atomic-scale disorder at quantum well interfaces. We develop a new theoretical approach to study these effects, which we name the disorder-expansion technique. We demonstrate that this method successfully reproduces atomistic tight-binding techniques
Long-Term Retention of Fluorescent Quantum Dots In Vivo
NASA Astrophysics Data System (ADS)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan; Eructiez, Marcel P.; Lagerholm, B. Christoffer; Waggoner, Alan S.
Quantum dots that emit in the near-infrared can be used in vivo to follow circulation, to target the reticuloendothelial system, and to map lymphatic drainage from normal tissues and tumors. We have explored the role of surface charge and passivation by polyethylene glycol in determining circulating lifetimes and sites of deposition. Use of long polyethylene glycol polymers increases circulating lifetime. Changing surface charge can partially direct quantum dots to the liver and spleen, or the lymph nodes. Quantum dots are cleared in the order liver > spleen > bone marrow > lymph nodes. Quantum dots retained by lymph nodes maintained fluorescence for two years, suggesting either that the coating is extremely stable or that some endosomes preserve quantum dot function. We also explored migration from tumors to sentinel lymph nodes using tumor models in mice; surface charge and size make little difference to transport from tumors. Antibody and Fab-conjugates of polymer-coated quantum dots failed to target tumors in vivo, probably because of size.
Fluorescence from a quantum dot and metallic nanosphere hybrid system
Schindel, Daniel G.; Singh, Mahi R.
2014-03-31
We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.
Investigations on Landé factor in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot
Kumar, N. R. Senthil; Peter, A. John
2014-04-24
The effective excitonic g-factor as functions of dot radius and the Ga alloy content, in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot, is numerically measured. The heavy hole excitonic states are studied for various Ga alloy content taking into account the anisotropy, non-parabolicity of the conduction band and the geometrical confinement effects. The quantum dot is considered as spherical dot of InAs surrounded by a GaAs barrier material.
Photoluminescence in quantum-confined SnO2 nanocrystals: Evidence of free exciton decay
NASA Astrophysics Data System (ADS)
Lee, E. J. H.; Ribeiro, C.; Giraldi, T. R.; Longo, E.; Leite, E. R.; Varela, J. A.
2004-03-01
Nanocrystalline SnO2 quantum dots were synthesized at room temperature by hydrolysis reaction of SnCl2. The addition of tetrabutyl ammonium hydroxide and the use of hydrothermal treatment enabled one to obtain tin dioxide colloidal suspensions with mean particle radii ranging from 1.5 to 4.3 nm. The photoluminescent properties of the suspensions were studied. The particle size distribution was estimated by transmission electron microscopy. Assuming that the maximum intensity photon energy of the photoluminescence spectra is related to the band gap energy of the system, the size dependence of the band gap energies of the quantum-confined SnO2 particles was studied. This dependence was observed to agree very well with the weak confinement regime predicted by the effective mass model. This might be an indication that photoluminescence occurs as a result of a free exciton decay process.
NASA Astrophysics Data System (ADS)
Ku, Kang; Kim, Minsoo; Paek, Kwanyeol; Shin, Jae; Chung, Sunhaeng; Jang, Se; Chae, Weon-Sik; Yi, Gi-Ra; Kim, Bumjoon; Se Gyu Jang Collaboration; Weon-Sik Chae Collaboration; Gi-Ra Yi Collaboration
2013-03-01
Fluorescent quantum dots (QDs) are promising candidates for multi-color or white light-emitting systems, however, most current systems involve undesired Forster resonance energy transfer (FRET) between QDs. Herein, we developed multi-color emitting hybrid microspheres with block copolymers (BCPs) and QDs through control of the locations of different-colored QDs in BCP micelles. Hydrogen interaction assisted method was exploited to confine QDs within the BCP spheres without sacrificing any quantum yield efficiency. BCP microspheres with raspberry-like surface structures were prepared by an evaporation-induced self-assembly from an emulsion. When different-colored QDs were independently incorporated into isolated micelles, FRET was completely suppressed because the size of the protective micellar corona was greater than the Forster radius. In contrast, FRET was observed when QDs were concurrently incorporated into the same micelle cores. This spatial control of QDs in microsphere was confirmed by TEM, EDX, PL, and FLIM measurements. Through the isolated BCP micelles, ratiometric control of different colored QDs can display a wide range of colors
Pulsed-laser micropatterned quantum-dot array for white light source
Wang, Sheng-Wen; Lin, Huang-Yu; Lin, Chien-Chung; Kao, Tsung Sheng; Chen, Kuo-Ju; Han, Hau-Vei; Li, Jie-Ru; Lee, Po-Tsung; Chen, Huang-Ming; Hong, Ming-Hui; Kuo, Hao-Chung
2016-01-01
In this study, a novel photoluminescent quantum dots device with laser-processed microscale patterns has been demonstrated to be used as a white light emitting source. The pulsed laser ablation technique was employed to directly fabricate microscale square holes with nano-ripple structures onto the sapphire substrate of a flip-chip blue light-emitting diode, confining sprayed quantum dots into well-defined areas and eliminating the coffee ring effect. The electroluminescence characterizations showed that the white light emission from the developed photoluminescent quantum-dot light-emitting diode exhibits stable emission at different driving currents. With a flexibility of controlling the quantum dots proportions in the patterned square holes, our developed white-light emitting source not only can be employed in the display applications with color triangle enlarged by 47% compared with the NTSC standard, but also provide the great potential in future lighting industry with the correlated color temperature continuously changed in a wide range. PMID:27005829
Interaction of Dirac Fermion excitons and biexciton-exciton cascade in graphene quantum dots
NASA Astrophysics Data System (ADS)
Ozfidan, Isil; Korkusinski, Marek; Hawrylak, Pawel
2015-03-01
We present a microscopic theory of interacting Dirac quasi-electrons and quasi-holes confined in graphene quantum dots. The single particle states of quantum dots are described using a tight binding model and screened direct, exchange, and scattering Coulomb matrix elements are computed using Slater pz orbitals. The many-body ground and excited states are expanded in a finite number of electron-hole pair excitations from the Hartree-Fock ground state and computed using exact diagonalization techniques. The resulting exciton and bi-exciton spectrum reflects the degeneracy of the top of the valence and bottom of the conduction band characteristic of graphene quantum dots with C3 symmetry. We study the interaction of multi-electron and hole complexes as a function of quantum dot size, shape and strength of Coulomb interactions. We identify two degenerate bright exciton (X) states and a corresponding biexciton (XX) state as XX-X cascade candidates, a source of entangled photon pairs. We next calculate the exciton to bi-exciton transitions detected in transient absorption experiments to extract the strength of exciton-exciton interactions and biexciton binding energies. We further explore the possibility of excitonic instability.
Charge Kondo effect in a triple quantum dot
NASA Astrophysics Data System (ADS)
Yoo, Gwangsu; Park, Jinhong; Lee, S. S.-B.; Sim, H.-S.
2014-03-01
We predict that the charge Kondo effect appears in a triangular triple quantum dot. The system has two-fold degenerate ground-state charge configurations, interdot Coulomb interactions, lead-dot electron tunnelings, but no interdot electron tunneling. We show, using bosonization and refermionization, that the system is described by the anisotropic Kondo model. The anisotropy can be tuned by changing lead-dot electron tunneling strength, which allows one to experimentally explore the transition between the ferromagnetic non-Fermi liquid and antiferromagnetic Kondo phases in the Kondo phase diagram. Using numerical renormalization group method, we demonstrate that the transition is manifested in electron conductances through the dot.
Annealing-induced change in quantum dot chain formation mechanism
NASA Astrophysics Data System (ADS)
Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun
2014-12-01
Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.
Annealing-induced change in quantum dot chain formation mechanism
Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun
2014-12-15
Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.
Coupled Landau-Zener-Stückelberg quantum dot interferometers
NASA Astrophysics Data System (ADS)
Gallego-Marcos, Fernando; Sánchez, Rafael; Platero, Gloria
2016-02-01
We investigate the interplay between long-range and direct photon-assisted transport in a triple quantum dot chain where local ac voltages are applied to the outer dots. We propose the phase difference between the two ac voltages as an external parameter, which can be easily tuned to manipulate the current characteristics. For gate voltages in phase opposition we find quantum destructive interferences analogous to the interferences in closed-loop undriven triple dots. As the voltages oscillate in phase, interferences between multiple paths give rise to dark states. Those totally cancel the current, and could be experimentally resolved.
Spin-entangled currents created by a triple quantum dot.
Saraga, Daniel S; Loss, Daniel
2003-04-25
We propose a simple setup of three coupled quantum dots in the Coulomb blockade regime as a source for spatially separated currents of spin-entangled electrons. The entanglement originates from the singlet ground state of a quantum dot with an even number of electrons. To preserve the entanglement of the electron pair during its extraction to the drain leads, the electrons are transported through secondary dots. This prevents one-electron transport by energy mismatch, while joint transport is resonantly enhanced by conservation of the total two-electron energy. PMID:12731992
Synthesis and characterization of aqueous quantum dots for biomedical applications
NASA Astrophysics Data System (ADS)
Li, Hui
Quantum Dots (QDs) are semiconductor nanocrystals (1˜20 nm) exhibiting distinctive photoluminescence (PL) properties due to the quantum confinement effect. Having many advantages over organic dyes, such as broad excitation and resistance to photobleaching, QDs are widely used in bioapplications as one of most exciting nanobiotechnologies. To date, most commercial QDs are synthesized through the traditional organometallic method and contain toxic elements, such as cadmium, lead, mercury, arsenic, etc. The overall goal of this thesis study is to develop an aqueous synthesis method to produce nontoxic quantum dots with strong emission and good stability, suitable for biomedical imaging applications. Firstly, an aqueous, simple, environmentally friendly synthesis method was developed. With cadmium sulfide (CdS) QDs as an example system, various processing parameters and capping molecules were examined to improve the synthesis and optimize the PL properties. The obtained water soluble QDs exhibited ultra small size (˜5 nm), strong PL and good stability. Thereafter, using the aqueous method, the zinc sulfide (ZnS) QDs were synthesized with different capping molecules, i.e., 3-mercaptopropionic acid (MPA) and 3-(mercaptopropyl)trimethoxysilane (MPS). Especially, via a newly developed capping molecule replacement method, the present ZnS QDs exhibited bright blue emission with a quantum yield of 75% and more than 60 days lifetime in the ambient conditions. Two cytotoxicity tests with human endothelial cells verified the nontoxicity of the ZnS QDs by cell counting with Trypan blue staining and fluorescence assay with Alamar Blue. Taking advantage of the versatile surface chemistry, several strategies were explored to conjugate the water soluble QDs with biomolecules, i.e., antibody and streptavidin. Accordingly, the imaging of Salmonella t. cells and biotinylated microbeads has been successfully demonstrated. In addition, polyethylenimine (PEI)-QDs complex was formed and
Nanocrystals and quantum dots formed by high-dose ion implantation
White, C.W.; Budai, J.D.; Zhu, J.G.; Withrow, S.P.; Hembree, D.M.; Henderson, D.O.; Ueda, A.; Tung, Y.S.; Mu, R.
1996-01-01
Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO{sub 2}) and crystalline (Al{sub 2}O{sub 3}) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amorphous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.
Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation
NASA Technical Reports Server (NTRS)
Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.
1997-01-01
We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.
Identification of luminescent surface defect in SiC quantum dots
NASA Astrophysics Data System (ADS)
Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang
2015-02-01
The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HO...C=O [n(OH) → π*(CO)] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438 nm. Another surface defect (Si-Si) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.
Spin qubits in quantum dots - beyond nearest-neighbour exchange
NASA Astrophysics Data System (ADS)
Vandersypen, Lieven
The spin of a single electron is the canonical two-level quantum system. When isolated in a semiconductor quantum dot, a single electron spin provides a well-controlled and long-lived quantum bit. So far, two-qubit gates in this system have relied on the spin exchange interaction that arises when the wave functions of neighbouring electrons overlap. Furthermore, experimental demonstrations of controlled spin-exchange have been limited to 1D quantum dot arrays only. Here we explore several avenues for scaling beyond 1D arrays with nearest-neighbour coupling. First, we show that second-order tunnel processes allow for coherent spin-exchange between non-nearest neighbour quantum dots. The detuning of the intermediate quantum dot controls the frequency of the exchange-driven oscillations of the spins. Second, we demonstrate shuttling of electrons in quantum dot arrays preserving the spin projection for more than 500 hops. We use this technique to read out multiple spins in a way analogous to the operation of a CCD. Finally, we develop superconducting resonators that are resilient to magnetic field and with a predicted tenfold increase in vacuum electric field amplitudes. This makes coupling spin qubits via superconducting resonators in a circuit-QED approach a realistic possibility. Supported by ERC, FOM, NWO, IARPA, ARO, EU.
Compact Interconnection Networks Based on Quantum Dots
NASA Technical Reports Server (NTRS)
Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew
2003-01-01
Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary
The ground state properties of In(Ga)As/GaAs low strain quantum dots
NASA Astrophysics Data System (ADS)
Pieczarka, Maciej; Sęk, Grzegorz
2016-08-01
We present theoretical studies on the confined states in low-strain In(Ga)As quantum dots (QDs). The 8-band k·p model together with the continuum elasticity theory and piezoelectric fields were employed to calculate the potential and confined electron and hole eigenstates. We focused on low-indium-content QDs with distinct in-plane asymmetry, which are naturally formed in the low strain regime of the Stranski-Krastanow growth mode. It has been found that the naturally thick wetting layer together with piezoelectric potential affect the total confinement potential to such extent that the hole eigenstates can get the spatial in-plane orientation orthogonal to the main axis of the dot elongation. This can influence both, qualitatively and quantitatively, many of the electronic and optical properties, as e.g. the polarization selection rules for the optical transition or the transitions oscillator strength. Eventually, importance of the degree of the shape asymmetry or the dots' size, and differences between the low-strain (low-In-content) QDs and pure InAs dots formed in high strain conditions are discussed.
High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.
Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-11-01
Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. PMID:27245962
The theoretical studies of topology electronic states in HgTe Hall Bar and Quantum Dot
NASA Astrophysics Data System (ADS)
Qu, Jin-Xian; Zhang, Shu-Hui; Yang, Wen
In recent years, there is an extensive attention on the new properties of topology materials and their potential applications. Our interest is on the physics in the quantum confined systems based on topology materials. To consider two such systems, i.e., quantum dot and Hall bar constructed on the HgTe quantum well, we study the electronic properties and their dependence on various material parameters with and without an in-plane electric field. For both systems, we find that 1) the exotic edge states appear in bulk energy gap, resulting from the non-trivial topological property of quantum well system. 2) by the magnetic doping, there are tunable phase transitions, e.g., transition from trivial insulating phase to topological insulating phase or anomalous quantum Hall insulating phase. 3) the in-plane electric field can introduce effective control on the electronic states.
Cooper pair splitting in parallel quantum dot Josephson junctions.
Deacon, R S; Oiwa, A; Sailer, J; Baba, S; Kanai, Y; Shibata, K; Hirakawa, K; Tarucha, S
2015-01-01
Devices to generate on-demand non-local spin entangled electron pairs have potential application as solid-state analogues of the entangled photon sources used in quantum optics. Recently, Andreev entanglers that use two quantum dots as filters to adiabatically split and separate the quasi-particles of Cooper pairs have shown efficient splitting through measurements of the transport charge but the spin entanglement has not been directly confirmed. Here we report measurements on parallel quantum dot Josephson junction devices allowing a Josephson current to flow due to the adiabatic splitting and recombination of the Cooper pair between the dots. The evidence for this non-local transport is confirmed through study of the non-dissipative supercurrent while tuning independently the dots with local electrical gates. As the Josephson current arises only from processes that maintain the coherence, we can confirm that a current flows from the spatially separated entangled pair. PMID:26130172
Cooper pair splitting in parallel quantum dot Josephson junctions
Deacon, R. S.; Oiwa, A.; Sailer, J.; Baba, S.; Kanai, Y.; Shibata, K.; Hirakawa, K.; Tarucha, S.
2015-01-01
Devices to generate on-demand non-local spin entangled electron pairs have potential application as solid-state analogues of the entangled photon sources used in quantum optics. Recently, Andreev entanglers that use two quantum dots as filters to adiabatically split and separate the quasi-particles of Cooper pairs have shown efficient splitting through measurements of the transport charge but the spin entanglement has not been directly confirmed. Here we report measurements on parallel quantum dot Josephson junction devices allowing a Josephson current to flow due to the adiabatic splitting and recombination of the Cooper pair between the dots. The evidence for this non-local transport is confirmed through study of the non-dissipative supercurrent while tuning independently the dots with local electrical gates. As the Josephson current arises only from processes that maintain the coherence, we can confirm that a current flows from the spatially separated entangled pair. PMID:26130172
Boda, Aalu Kumar, D. Sanjeev; Chatterjee, Ashok; Mukhopadhyay, Soma
2015-06-24
The ground state energy of a hydrogenic D{sup 0} complex trapped in a three-dimensional GaAs quantum dot with Gaussian confinement is calculated variationally incorporating the effect of Rashba spin-orbit interaction. The results are obtained as a function of the quantum dot size and the Rashba spin-orbit interaction. The results show that the Rashba interaction reduces the ground state energy of the system.
Crystal-phase quantum dots in GaN quantum wires
NASA Astrophysics Data System (ADS)
Corfdir, Pierre; Hauswald, Christian; Marquardt, Oliver; Flissikowski, Timur; Zettler, Johannes K.; Fernández-Garrido, Sergio; Geelhaar, Lutz; Grahn, Holger T.; Brandt, Oliver
2016-03-01
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong blueshift of the transition originating from the radiative decay of stacking fault-bound excitons. Moreover, the radiative lifetime of this transition in the ultrathin nanowires is independent of temperature up to 60 K and significantly longer than that of the corresponding transition in as-grown nanowires. These findings reveal a zero-dimensional character of the confined exciton state and thus demonstrate that I1 stacking faults in ultrathin nanowires act as genuine quantum dots.
Ultrasensitive solution-cast quantum dot photodetectors
NASA Astrophysics Data System (ADS)
Konstantatos, Gerasimos; Howard, Ian; Fischer, Armin; Hoogland, Sjoerd; Clifford, Jason; Klem, Ethan; Levina, Larissa; Sargent, Edward H.
2006-07-01
Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D*, the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of PbS colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 103AW-1. The best devices exhibited a normalized detectivity D* of 1.8 × 1013jones (1jones = 1cmHz1/2W-1) at 1.3µm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D* in the 1012jones range at room temperature, whereas the previous record for D* from a photoconductive detector lies at 1011jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices.
Prasankumar, Rohit P; Taylor, Antoinette J; Chow, W W; Attaluri, R S; Shenoi, R
2009-01-01
Semiconductor heterostructures incorporating multiple degrees of spatial confinement have recently attracted substantial interest for photonic applications. One example is the quantum dots-in-a-well (DWELL) heterostructure, consisting of zero-dimensional quantum dots embedded in a two-dimensional quantum well and surrounded by three-dimensional bulk material. This structure offers several advantages over conventional photonic devices while providing a model system for the study of light-matter interactions across multiple spatial dimensions. Here, we use ultrafast differential transmission spectroscopy2 to temporally and spectrally resolve density-dependent carrier dynamics in a DWELL heterostructure. We observe excitation-dependent shifts of the quantum dot energy levels at low densities, while at high densities we observe an anomalous induced absorption at the quantum dot excited state that is correlated to quantum well population dynamics. These studies of density-dependent light-matter interactions across multiple coupled spatial dimensions provide clues to the underlying physics governing quantum dot properties, with important implications for DWELL-based photonic devices.
Investigation of size dependent structural and optical properties of thin films of CdSe quantum dots
Sharma, Madhulika; Sharma, A.B.; Mishra, N.; Pandey, R.K.
2011-03-15
Research highlights: {yields} CdSe q-dots have been synthesized using simple chemical synthesis route. {yields} Thin film of CdSe quantum dots exhibited self-organized growth. {yields} Size dependent blue shift observed in the absorption edge of CdSe nanocrystallites. {yields} PL emission band corresponds to band edge luminescence and defect luminescence. {yields} Organized growth led to enhancement in luminescence yield of smaller size Q-dots. -- Abstract: Cadmium selenide (CdSe) quantum dots were grown on indium tin oxide substrate using wet chemical technique for possible application as light emitting devices. The structural, morphological and luminescence properties of the as deposited thin films of CdSe Q-dot have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. The quantum dots have been shown to deposit in an organized array on ITO/glass substrate. The as grown Q-dots exhibited size dependent blue shift in the absorption edge. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the nanocrystalline CdSe exhibits intense photoluminescence as compared to the large grained polycrystalline CdSe films.
Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
Korenev, V. V. Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.
2013-10-15
It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.
Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals
Heshmati, S; Golmohammadi, S; Abedi, K; Taleb, H
2014-03-28
We have studied the influence of the quantum-dot (QD) width and the quantum-dot conduction band (QD-CB) offset on the efficiency of quantum-dot intermediate band solar cells (QD-IBSCs). Simulation results demonstrate that with increasing QD-CB offset and decreasing QD width, the maximum efficiency is achieved. (laser applications and other topics in quantum electronics)
Quantum dot mediated imaging of atherosclerosis
NASA Astrophysics Data System (ADS)
Jayagopal, Ashwath; Su, Yan Ru; Blakemore, John L.; Linton, MacRae F.; Fazio, Sergio; Haselton, Frederick R.
2009-04-01
The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE-/- mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.
Photodynamic antibacterial effect of graphene quantum dots.
Ristic, Biljana Z; Milenkovic, Marina M; Dakic, Ivana R; Todorovic-Markovic, Biljana M; Milosavljevic, Momir S; Budimir, Milica D; Paunovic, Verica G; Dramicanin, Miroslav D; Markovic, Zoran M; Trajkovic, Vladimir S
2014-05-01
Synthesis of new antibacterial agents is becoming increasingly important in light of the emerging antibiotic resistance. In the present study we report that electrochemically produced graphene quantum dots (GQD), a new class of carbon nanoparticles, generate reactive oxygen species when photoexcited (470 nm, 1 W), and kill two strains of pathogenic bacteria, methicillin-resistant Staphylococcus aureus and Escherichia coli. Bacterial killing was demonstrated by the reduction in number of bacterial colonies in a standard plate count method, the increase in propidium iodide uptake confirming the cell membrane damage, as well as by morphological defects visualized by atomic force microscopy. The induction of oxidative stress in bacteria exposed to photoexcited GQD was confirmed by staining with a redox-sensitive fluorochrome dihydrorhodamine 123. Neither GQD nor light exposure alone were able to cause oxidative stress and reduce the viability of bacteria. Importantly, mouse spleen cells were markedly less sensitive in the same experimental conditions, thus indicating a fairly selective antibacterial photodynamic action of GQD. PMID:24612819
Carbon Quantum Dots for Zebrafish Fluorescence Imaging.
Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo
2015-01-01
Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties. Herein, we describe fluorescence bioimaging of zebrafish using C-QDs as probe in terms of the preparation of C-QDs, zebrafish husbandry, embryo harvesting, and introduction of C-QDs into embryos and larvae by soaking and microinjection. The multicolor of C-QDs was validated with their imaging for zebrafish embryo. The distribution of C-QDs in zebrafish embryos and larvae were successfully observed from their fluorescence emission. the bio-toxicity of C-QDs was tested with zebrafish as model and C-QDs do not interfere to the development of zebrafish embryo. All of the results confirmed the high biocompatibility and low toxicity of C-QDs as imaging probe. The absorption, distribution, metabolism and excretion route (ADME) of C-QDs in zebrafish was revealed by their distribution. Our work provides the useful information for the researchers interested in studying with zebrafish as a model and the applications of C-QDs. The operations related zebrafish are suitable for the study of the toxicity, adverse effects, transport, and biocompatibility of nanomaterials as well as for drug screening with zebrafish as model. PMID:26135470
Enhancement of pumped current in quantum dots
NASA Astrophysics Data System (ADS)
Ramos, Juan Pablo; Foa, Luis; Apel, Victor Marcelo; Orellana, Pedro
A direct current usually requires the application of a non-zero potential difference between source and drain, but on nanoscale systems (NSS) it is possible to obtain a non-zero current while the potential difference is zero. The effect is known as quantum charge pumping (QCP) and it is due to the interference provided by the existence of a time-dependent potential (TDP). QCP can be generated by a TDP in non-adiabatic limit. An example of this is a system composed by a ring with a dot embedded on it, under the application of an oscillating TDP. By the action of a magnetic field across the system, a pumped current is generated, since time reversal symmetry is broken. Decoherence is crucial, both from a scientific and technological point of view. In NSS it is expected that decoherence, among others things, decreases the QCP amplitude. In this context, we study what is the effect of a bath on the pumped current in our system. We find that for certain values of magnetic flux, the bath-system produce amplification of the pumped current.
Toxicity of carbon group quantum dots
NASA Astrophysics Data System (ADS)
Hanada, Sanshiro; Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Hirakuri, Kenji; Yamamoto, Kenji
2009-02-01
Carbon group quantum dots (QDs) such as carbon, silicon and germanium, have potential for biomedical applications such as bio-imaging markers and drug delivery systems and are expected to demonstrate several advantages over conventional fluorescent QDs such as CdSe, especially in biocompatibility. We assessed biocompatibility of newly manufactured silicon QDs (Si-QDs), by means of both MTT assay and LDH assay for HeLa cells in culture and thereby detected the cellular toxicity by administration of high concentration of Si-QD (>1000 μg/mL), while we detected the high toxicity by administration of over 100 μg/mL of CdSe-QDs. As a hypothesis for the cause of the cellular toxicity, we measured oxy-radical generation from the QDs by means of luminol reaction method. We detected generation of oxy-radicals from the Si-QDs and those were decreased by radical scavenger such as superoxide dismutase (SOD) and N-acetyl cysteine (NAC). We concluded that the Si-QD application to cultured cells in high concentration led cell membrane damage by oxy-radicals and combination usage with radical scavenger is one of the answers.
Doping silicon nanocrystals and quantum dots.
Oliva-Chatelain, Brittany L; Ticich, Thomas M; Barron, Andrew R
2016-01-28
The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant. PMID:26727507
Doping silicon nanocrystals and quantum dots
NASA Astrophysics Data System (ADS)
Oliva-Chatelain, Brittany L.; Ticich, Thomas M.; Barron, Andrew R.
2016-01-01
The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.
Immune cells tracing using quantum dots
NASA Astrophysics Data System (ADS)
Hoshino, Akiyoshi; Fujioka, Kouki; Kawamura, Yuki I.; Toyama-Sorimachi, Noriko; Yasuhara, Masato; Dohi, Taeko; Yamamoto, Kenji
2006-02-01
Fluorescent nanoparticles, such as nanocrystal quantum dots (QDs), have potential to be applied to molecular biology and bioimaging, since some nanocrystals emit higher and longer lasting fluorescence than conventional organic probes do. Here we report an example of labeling immune cells by QDs. We collected splenic CD4 + T-lymphocyte and peritoneal macrophages from mice. Then cells were labeled with QDs. QDs are incorporated into the T-lymphocyte and macrophages immediately after addition and located in the cytoplasm via endocytosis pathway. The fluorescence of QDs held in the endosomes was easily detected for more than a week. In addition, T-lymphocytes labeled with QDs were stable and cell proliferation or cytokine production including IL-2 and IFN-γ was not affected. When QD-labeled T-lymphocytes were adoptively transferred intravenously to mice, they remained in the peripheral blood and spleen up to a week. Using QD-labeled peritoneal macrophages, we studied cell traffic during inflammation on viscera in peritoneum cavity. QD-labeled macrophages were transplanted into the peritoneum of the mouse, and colitis was induced by intracolonic injection of a hapten, trinitrobenzensulfonic acid. With the aid of stong signals of QDs, we found that macrophage accumuled on the inflammation site of the colon. These results suggested that fluorescent probes of QDs might be useful as bioimaging tools for tracing target cells in vivo.
Carbon Quantum Dots for Zebrafish Fluorescence Imaging
Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo
2015-01-01
Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties. Herein, we describe fluorescence bioimaging of zebrafish using C-QDs as probe in terms of the preparation of C-QDs, zebrafish husbandry, embryo harvesting, and introduction of C-QDs into embryos and larvae by soaking and microinjection. The multicolor of C-QDs was validated with their imaging for zebrafish embryo. The distribution of C-QDs in zebrafish embryos and larvae were successfully observed from their fluorescence emission. the bio-toxicity of C-QDs was tested with zebrafish as model and C-QDs do not interfere to the development of zebrafish embryo. All of the results confirmed the high biocompatibility and low toxicity of C-QDs as imaging probe. The absorption, distribution, metabolism and excretion route (ADME) of C-QDs in zebrafish was revealed by their distribution. Our work provides the useful information for the researchers interested in studying with zebrafish as a model and the applications of C-QDs. The operations related zebrafish are suitable for the study of the toxicity, adverse effects, transport, and biocompatibility of nanomaterials as well as for drug screening with zebrafish as model. PMID:26135470
Inelastic Heat Transfer in Molecular Quantum Dots
NASA Astrophysics Data System (ADS)
Dyrkacz, Joanna; Walczak, Kamil
We examine electronic heat conduction via molecular complexes in the presence of local electron-phonon coupling effects. In off-resonance transport regime, even weak electron-phonon interactions lead to phonon-mediated changes of transport characteristics. In the nearly resonance conditions, the strong electron-phonon coupling reduces the height of the main conductance peak, generating additional satellites (phonon sidebands) in transport characteristics and shifting molecular energy spectrum via reorganization (polaron) energy. In the past, it was shown that inclusion of electron-phonon coupling effects into computational scheme reduces discrepancy between theoretical results and experimental data. The aim of this project is to study electron-phonon coupling effects on electronic heat transfer at molecular level. For that purpose, we use non-perturbative computational scheme based on inelastic version of Landauer formula, where the Green's functions technique combined with polaron transformation was used to calculate multi-channel transmission probability function, while accessibility of individual conduction channels is governed by Boltzmann statistics. Our analysis is based on the hypothesis that the dynamics created by electron-phonon interaction onto the molecular quantum dot asymmetrically connected to two thermal reservoirs will lead to thermal rectification effect. Our results will be discussed in a few aspects: electron-phonon coupling strength, phonon dispersion relationship, and heat fluxes generated by temperature difference as well as bias voltage.
Carbon Quantum Dots for Zebrafish Fluorescence Imaging
NASA Astrophysics Data System (ADS)
Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo
2015-07-01
Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties. Herein, we describe fluorescence bioimaging of zebrafish using C-QDs as probe in terms of the preparation of C-QDs, zebrafish husbandry, embryo harvesting, and introduction of C-QDs into embryos and larvae by soaking and microinjection. The multicolor of C-QDs was validated with their imaging for zebrafish embryo. The distribution of C-QDs in zebrafish embryos and larvae were successfully observed from their fluorescence emission. the bio-toxicity of C-QDs was tested with zebrafish as model and C-QDs do not interfere to the development of zebrafish embryo. All of the results confirmed the high biocompatibility and low toxicity of C-QDs as imaging probe. The absorption, distribution, metabolism and excretion route (ADME) of C-QDs in zebrafish was revealed by their distribution. Our work provides the useful information for the researchers interested in studying with zebrafish as a model and the applications of C-QDs. The operations related zebrafish are suitable for the study of the toxicity, adverse effects, transport, and biocompatibility of nanomaterials as well as for drug screening with zebrafish as model.
Advancing colloidal quantum dot photovoltaic technology
NASA Astrophysics Data System (ADS)
Cheng, Yan; Arinze, Ebuka S.; Palmquist, Nathan; Thon, Susanna M.
2016-06-01
Colloidal quantum dots (CQDs) are attractive materials for solar cells due to their low cost, ease of fabrication and spectral tunability. Progress in CQD photovoltaic technology over the past decade has resulted in power conversion efficiencies approaching 10%. In this review, we give an overview of this progress, and discuss limiting mechanisms and paths for future improvement in CQD solar cell technology.We briefly summarize nanoparticle synthesis and film processing methods and evaluate the optoelectronic properties of CQD films, including the crucial role that surface ligands play in materials performance. We give an overview of device architecture engineering in CQD solar cells. The compromise between carrier extraction and photon absorption in CQD photovoltaics is analyzed along with different strategies for overcoming this trade-off. We then focus on recent advances in absorption enhancement through innovative device design and the use of nanophotonics. Several light-trapping schemes, which have resulted in large increases in cell photocurrent, are described in detail. In particular, integrating plasmonic elements into CQD devices has emerged as a promising approach to enhance photon absorption through both near-field coupling and far-field scattering effects. We also discuss strategies for overcoming the single junction efficiency limits in CQD solar cells, including tandem architectures, multiple exciton generation and hybrid materials schemes. Finally, we offer a perspective on future directions for the field and the most promising paths for achieving higher device efficiencies.
CdS quantum dots in colloids and polymer matrices: electronic structure and photochemical properties
NASA Astrophysics Data System (ADS)
Gurin, V. S.; Artemyev, M. V.
1994-04-01
We have studied the optical properties and electronic structures of quantum-confined CdS particles (Q-particles, quantum dots) prepared as CdS colloids in different solvents, CdS particles embedded in polymer matrices and vacuum evaporated island films of CdS. Due to the quantum-confined effect, the optical spectra of these systems exhibit the explicit blue shift of fundamental interband absorption and the appearance of well-pronounced exciton peaks at room temperature. The electronic structure of CdS quantum dots was examined by X-ray photoeletron spectroscopy and semi-empirical quantum-chemical calculations were performed. Both XRS data and results of calculations reveal the clear difference in valence band density of states for CdS Q-particles with respect to bulk CdS. Semiconductor-like electronic structure, especially for d-band, appears for CdS clusters containing more than 100 atoms. We also compare the relative stability of CdS clusters of different structure. Additionally, we studied the photochemical properties of CdS Q-particles and observed the effect of spectral hole burning in the absorption spectra of CdS colloids in 2-propanol during UV laser irradiation. This phenomenon results probably from selective photo-oxidation of CdS Q-particles, whose exciton absorption bands are close to irradiation wavelength.
Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study
Michael, Stephan; Chow, Weng; Schneider, Hans
2016-05-13
In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less
2 Micrometers InAsSb Quantum-dot Lasers
NASA Technical Reports Server (NTRS)
Qiu, Yueming; Uhl, David; Keo, Sam
2004-01-01
InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.
Quantum dots: Time to get the nukes out
NASA Astrophysics Data System (ADS)
Schroer, Michael D.; Petta, Jason R.
2008-07-01
The ability to electrically control spin dynamics in quantum dots makes them one of the most promising platforms for solid-state quantum-information processing. Minimizing the influence of the nuclear spin environment is an important step towards realizing such promise.