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Sample records for r-plane sapphire substrates

  1. (110)-oriented indium tin oxide films grown on m- and r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Chern, Ming-Yau; Lu, Tso-Wen; Xu, Wei-Lun

    2015-04-01

    Indium tin oxide (ITO) thin films have been deposited by pulsed laser deposition on m-plane (100) and r-plane (012) sapphire substrates. For both substrates, the films were grown with their [110] direction perpendicular to the substrate planes under the conditions of high growth temperature and high oxygen pressure. Their in-plane epitaxial relations with the substrates were identified to be ITO[001] ∥ Al2O3[020] and \\text{ITO}[1\\bar{1}0]\\parallel \\text{Al}2\\text{O}3[001] for the m-plane substrate. For the r-plane substrate, two types of lattice matching were observed: one being \\text{ITO}[001]\\parallel \\text{Al}2\\text{O}3[2,1, - 1/2] and \\text{ITO}[1\\bar{1}0]\\parallel \\text{Al}2\\text{O}3[4/3, - 4/3,2/3], the other being \\text{ITO}[001]\\parallel \\text{Al}2\\text{O}3[1, - 1,1/2] and \\text{ITO}[1\\bar{1}0]/\\text{Al}2\\text{O}3[8/3,4/3, - 2/3]. The electrical properties were measured by the Hall effect and van der Pauw methods at room temperature. All of the samples have low electrical resistivity on the order of 3.0 × 10-4 Ω cm, high carrier concentration of about 2.5 × 1020 cm-3, and mobility ranging from 70 to 90 cm2 V-1 s-1.

  2. Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Yasui, Daiki; Tamaki, Shinya; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-05-01

    Single-crystal a-plane AlN(11\\bar{2}0) films were grown on r-plane sapphire (1\\bar{1}02) substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia (NH3) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 °C, and NH3 preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH3 preflow time. The crystallinity of a-plane AlN films was improved by varying the NH3 preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with NH3 preflow for 30 s.

  3. O thin films with different Mg contents on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chen, W.; Pan, X. H.; Ding, P.; Zhang, H. H.; Chen, S. S.; Dai, W.; Huang, J. Y.; Lu, B.; Ye, Z. Z.

    2014-09-01

    We report the growth and characterization of a series of non-polar Zn1- x Mg x O thin films with different Mg contents, which have been prepared on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Structural properties are anisotropic and surfaces of films show stripes running along the c-axis direction. The films exhibit atomically smooth surface with the minimal root mean square surface roughness of 0.36 nm. Non-polar Zn1- x Mg x O thin film is much easier to obtain pure a-plane single crystal orientation when Mg content is high. The quality of the non-polar Zn1- x Mg x O thin films is evidenced by X-ray diffraction (XRD) rocking curves full-width at half-maximum of 1,350 arcsec for the () reflection and 1,760 arcsec for the () reflection, respectively. Room temperature photoluminescence peak shifts monotonously from 3.29 to 3.56 eV as Mg content increases from 0 to 0.13. Alloying with Mg is found to widen the bandgap energy of the ZnO.

  4. Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

    SciTech Connect

    Chandrasekaran, R.; Moustakas, T. D.; Ozcan, A. S.; Ludwig, K. F.; Zhou, L.; Smith, David J.

    2010-08-15

    This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its (1120) A-plane parallel to the (1102) R-plane of sapphire, our results indicate that the crystallographic orientation of the III-nitride films is strongly dependent on the kinetic conditions of growth for the GaN or AlN buffer layers. Thus, group III-rich conditions for growth of either GaN or AlN buffers result in nitride films having (1120) planes parallel to the sapphire surface, and basal-plane stacking faults parallel to the growth direction. The growth of these buffers under N-rich conditions instead leads to nitride films with (1126) planes parallel to the sapphire surface, with inclined c-plane stacking faults that often terminate threading dislocations. Moreover, electron microscope observations indicate that slight miscut ({approx}0.5 deg. ) of the R-plane sapphire substrate almost completely suppresses the formation of twinning defects in the (1126) GaN films.

  5. Orientation relationships of copper crystals on sapphire (1 0 1¯ 0) m-plane and (1 0 1¯ 2) r-plane substrates

    NASA Astrophysics Data System (ADS)

    Chatain, Dominique; Curiotto, Stefano; Wynblatt, Paul; Meltzman, Hila; Kaplan, Wayne D.; Rohrer, Gregory S.

    2015-05-01

    Copper films deposited on m- and r-plane sapphire substrates have been dewetted in either the solid or the liquid state, and equilibrated at 1253 K. The orientation relationships (ORs) between the dewetted copper crystals and the sapphire substrates have been investigated by electron backscatter diffraction. In addition, the shape of the copper/sapphire interface has been studied by scanning electron microscopy. Although the as-deposited films develop {1 1 1} surfaces parallel to both substrates, after solid state dewetting the copper crystals on the m-plane substrate are found to change their interface plane from Cu{1 1 1}||Al2O3(m-plane) to Cu{1 1 1}|| Al2O3 (a-plane), and after liquid state dewetting the preferred OR of copper on both m- and r-plane substrates may be expressed as: Cu{1 1 1}<1 1 0> || Al2O3 {1 1 2bar 0}<0 0 0 1>. This OR is identical to that previously observed for copper on the sapphire a-plane.

  6. Effects of precursor concentration on the properties of ZnO nanowires grown on (1-102) r-plane sapphire substrates by hydrothermal synthesis.

    PubMed

    Mun, D-H; Bak, S J; Ha, J-S; Lee, H-J; Lee, J K; Lee, S H; Moon, Y B

    2014-08-01

    In this study, we grew ZnO nanowires hydrothermally on (1-102) r-plane sapphire substrates in an aqueous solution which contained zinc nitrate hexahydrate and hexamethylenetetramine (HMT) at 90 °C. First, the AZO seed layer of 80 nm thickness was deposited on the r-plane sapphire substrate by a radio frequency magnetron sputter. After that, we grew the ZnO nanowires on the seed layer by changing the precursor concentration of the aqueous solution from 0.025 M to 0.01 M. When the molar concentration of the precursor was changed, the diameter, length, density and number of ZnO nanowires also changed significantly: diameter, length and density increased with increasing molar concentration but the number of ZnO nanowires decreased. The ZnO nanowires grown at the higher molar concentration tended to grow along with the c-axis direction, as revealed by atomic force microscope and X-ray diffraction peaks. Furthermore, the PL spectra measured at room-temperature revealed a UV emission of 380 nm which can be attributed to the radiative recombination of free and bound excitons (Near Band edge Emission). The NBE emission was also increased with increasing molar concentration. PMID:25936038

  7. Influence of trench period and depth on MOVPE grown (11 2 bar 2) GaN on patterned r-plane sapphire substrates.

    NASA Astrophysics Data System (ADS)

    Caliebe, Marian; Tandukar, Sushil; Cheng, Zongzhe; Hocker, Matthias; Han, Yisong; Meisch, Tobias; Heinz, Dominik; Huber, Florian; Bauer, Sebastian; Plettl, Alfred; Humphreys, Colin; Thonke, Klaus; Scholz, Ferdinand

    2016-04-01

    In this article, the influence of the trench period and depth of pre-structured r-plane sapphire substrates on the metalorganic vapor phase epitaxy (MOVPE) growth of (11 2 bar 2) GaN is investigated. We found that a larger trench period is beneficial for a small basal plane stacking fault (BSF) and threading dislocation (TD) density on the wafer surface, because it facilitates a better formation of a coalescence gap, which effectively blocks defects from penetrating to the surface. Further, the amount of BSFs emerging from the -c-wings of the uncoalesced GaN stripes is directly related to the trench period. With the help of in situ deposited marker layers we studied the development of the individual GaN stripes and observed that the trench depth and hence the ratio of the sapphire c-plane area relative to the total surface area heavily influences the coalescence process and defect development. Moreover, it is observed that the parasitic donor concentration increases for samples with smoother wafer surface.

  8. Preparation of Y123 films on REAlO 3-buffered off-cut substrates of R-plane sapphire

    NASA Astrophysics Data System (ADS)

    Yamaguchi, I.; Manabe, T.; Sohma, M.; Tsuchiya, T.; Kumagai, T.; Suzuki, S.; Yamaguchi, Y.; Watanabe, T.; Mizuta, S.

    2002-10-01

    An epitaxial YBa 2Cu 3O 7- x (Y123) film was prepared on a REAlO 3 (RENd)-buffered vicinal (off-cut angle: 4.5°) α-Al 2O 3( 1¯ 0 1 2) substrate and their crystallographic relationship was investigated. Both the NdAlO 3-buffer layer and Y123 film were obtained by a coating-pyrolysis process. The XRD θ-2 θ scanning exhibited the growth of a/ c-oriented Y123. However, XRD ω-scanning of the Y123 006 reflection showed that the c-axis oriented grains comprised two components; the intensity ratio being >2:1. The c-axis of the major component was perpendicular to the substrate surface whereas that of the minor one inclined ∼10° away from the surface normal. These results suggest that, if properly optimized, epitaxial Y123 films of which the c-axis is dominantly parallel to the substrate normal would be obtained by using the REAlO 3-buffered vicinal substrates whereas doubly tilted Y123 films would occur if instead the normal α-Al 2O 3( 1¯ 0 1 2) substrates without off-cut were used.

  9. Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

    SciTech Connect

    Sakai, Joe; Limelette, Patrice

    2015-12-14

    We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratios were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.

  10. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  11. Step-induced misorientation of GaN grown on r-plane sapphire

    SciTech Connect

    Smalc-Koziorowska, J.; Dimitrakopulos, G. P.; Sahonta, S.-L.; Komninou, Ph.; Tsiakatouras, G.; Georgakilas, A.

    2008-07-14

    In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.

  12. High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian C.

    2007-01-01

    This paper presents the characteristics of coplanar waveguide transmission lines on R-plane sapphire and alumina over the temperature range of 25 to 400 C and the frequency range of 45 MHz to 50 GHz. A Thru-Reflect-Line calibration technique and open circuited terminated stubs are used to extract the attenuation and effective permittivity. It is shown that the effective permittivity of the transmission lines and, therefore, the relative dielectric constant of the two substrates increase linearly with temperature. The attenuation of the coplanar waveguide varies linearly with temperature through 200 C, and increases at a greater rate above 200 C.

  13. Template-free directional growth of single-walled carbon nanotubes on a- and r-plane sapphire.

    PubMed

    Han, Song; Liu, Xiaolei; Zhou, Chongwu

    2005-04-20

    We report high-throughput growth of highly aligned single-walled carbon nanotube arrays on a-plane and r-plane sapphire substrates. This is achieved using chemical vapor deposition with ferritin as the catalyst. The nanotubes are aligned normal to the [0001] direction for growth on the a-plane sapphire. They are typically tens of micrometers long, with a narrow diameter distribution of 1.34 +/- 0.30 nm. In contrast, no orientation was achieved for growth on the c-plane and m-plane sapphire, or when Fe films, instead of ferritin, were used as the catalyst. Such orientation control is likely related to the interaction between carbon nanotubes and the sapphire substrate, which is supported by the observation that when a second layer of nanotubes was grown, they followed the gas flow direction. These aligned nanotube arrays may enable the construction of integrable and scalable nanotube devices and systems. PMID:15826147

  14. Growth of non-polar a-plane AlN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jo, Masafumi; Hirayama, Hideki

    2016-05-01

    Growth of non-polar AlN is crucial to the realization of polarization-free light-emitting diodes in deep UV range. The aim of this study was to investigate the growth condition for obtaining a flat a-plane AlN on r-plane sapphire. A thin AlN layer grown at lower temperature played an important role in protecting the sapphire surface. Both high temperature and low V/III ratio were necessary in terms of enhanced adatom diffusion, leading to the formation of a flat AlN buffer.

  15. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    SciTech Connect

    Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Georgakilas, A.; Lotsari, A.; Dimitrakopulos, G. P. Kehagias, Th.; Komninou, Ph.

    2015-06-28

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5–6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  16. Persistence of superconductivity in niobium ultrathin films grown on R-plane sapphire

    NASA Astrophysics Data System (ADS)

    Delacour, Cécile; Ortega, Luc; Faucher, Marc; Crozes, Thierry; Fournier, Thierry; Pannetier, Bernard; Bouchiat, Vincent

    2011-04-01

    We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultrahigh vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films, showing that heteroepitaxy is not achieved under a thickness of 3.3 nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9 ML) has an offset critical temperature above 4.2 K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices.

  17. Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Vennegues, P.; Korytov, M.; Deparis, C.; Zuniga-Perez, J.; Morhain, C.; Chauveau, J. M.

    2008-04-15

    The interfacial relationship and the microstructure of nonpolar (11-20) ZnO films epitaxially grown on (1-102) R-plane sapphire by molecular beam epitaxy are investigated by transmission electron microscopy. The already-reported epitaxial relationships [1-100]{sub ZnO} parallel [11-20]{sub sapphire} and <0001>{sub ZnO} parallel [-1101]{sub sapphire} are confirmed, and we have determined the orientation of the Zn-O (cation-anion) bond along [0001]{sub ZnO} in the films as being uniquely defined with respect to a reference surface Al-O bond on the sapphire substrate. The microstructure of the films is dominated by the presence of I{sub 1} basal stacking faults [density=(1-2)x10{sup 5} cm{sup -1}] and related partial dislocations [density=(4-7)x10{sup 10} cm{sup -2}]. It is shown that I{sub 1} basal stacking faults correspond to dissociated perfect dislocations, either c or a+c type.

  18. Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

    SciTech Connect

    Dimitrakopulos, G. P.

    2012-07-02

    The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

  19. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  20. Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN

    NASA Astrophysics Data System (ADS)

    Kim, Ji Hoon; Park, Jung Ho; Hwang, Sung-Min; Baik, Kwang Hyeon

    2012-05-01

    We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2° ˜ +0.4°. Samples grown by using -0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4° off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2° ˜ +0.2° to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN.

  1. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    SciTech Connect

    Nakasu, T. Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-10-28

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  2. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-10-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [-211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  3. Morphology of ZnO grown by MOCVD on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Munuera, C.; Zúñiga-Pérez, J.; Rommeluere, J. F.; Sallet, V.; Triboulet, R.; Soria, F.; Muñoz-Sanjosé, V.; Ocal, C.

    2004-03-01

    A quantitative roughness and microstructural analysis of ZnO grown on sapphire by atmospheric metalorganic chemical vapor deposition (MOCVD) is presented. In order to investigate the influence of the substrate on the morphology, different sapphire orientations have been employed. Scanning force microscopy data have been analyzed for a variety of thicknesses to elucidate, if possible, the growth mechanisms involved in the growth process. Our study reveals significant differences between morphologies depending on whether the substrate surface exhibits steps (misoriented a-, c- and r-planes) or not ( m-plane); however, no major differences on the calculated roughness coefficients have been found.

  4. Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties

    PubMed Central

    Aggarwal, Ravi; Zhou, Honghui; Jin, Chunming; Narayan, J.; Narayan, Roger J.

    2010-01-01

    We report heteroepitaxial growth of (101¯2) oriented (r-plane) ZnO films on Si(100) substrates. The films were grown by pulsed laser deposition and integration of ZnO with silicon was achieved using a tetragonal yttria stabilized zirconia (YSZ) buffer layer. It was observed that ZnO films grown at temperatures in the range of 700–750 °C with relatively high oxygen pressure (∼70 mTorr) were (101¯2) oriented. ZnO films deposited with lower oxygen pressures were found to be purely (0002) orientated. Experiments carried out to elucidate the role of oxygen pressure indicated that the crystallographic orientation of ZnO depends on the nature of atomic termination of YSZ layer. It has been proposed that crystallographic orientation of ZnO is controlled by chemical free energy associated with ZnO-YSZ interface. Detailed x-ray diffraction and transmission electron microscopy studies showed existence of four types of in-plane domains in r-plane ZnO films. Optical characterization demonstrated that photoluminescence of r-plane ZnO films was superior to that of c-plane ZnO films grown under similar conditions. PMID:20634966

  5. Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Maliakkal, Carina B.; Rahman, A. Azizur; Hatui, Nirupam; Chalke, Bhagyashree A.; Bapat, Rudheer D.; Bhattacharya, Arnab

    2016-04-01

    Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the influence of carrier gas, growth temperature, reactor pressure, reactant flow rates and substrate orientation in order to obtain thin nanowires. The nanowires grew along the < 10 1 bar 1 > and < 10 1 bar 0 > axes depending on the substrate orientation. These nanowires were further characterized using x-ray diffraction, electron microscopy, photoluminescence and Raman spectroscopy.

  6. High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

  7. Optical waveguide formed by cubic silicon carbide on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Tang, Xiao; Wongchotigul, Kobchat; Spencer, Michael G.

    1991-01-01

    Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

  8. Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Nakasu, Taizo; Aiba, Takayuki; Yamashita, Sotaro; Hattori, Shota; Kizu, Takeru; Sun, Wei-Che; Taguri, Kosuke; Kazami, Fukino; Hashimoto, Yuki; Ozaki, Shun; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-06-01

    Zinc telluride (ZnTe) epilayers were grown on S-plane (10bar{1}1 ) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10bar{1}0 ) substrates, and r-plane (1bar{1}02 ). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

  9. Effect of sapphire substrate orientations on the microstructural, optical and NO2 gas sensing properties of Zn(1-x)CdxO thin films synthesized by sol gel spin-coating method

    NASA Astrophysics Data System (ADS)

    Boukadhaba, M. A.; Chebil, W.; Fouzri, A.; Sallet, V.; Lusson, A.; Amiri, G.; Vilar, C.; Oumezzine, M.

    2016-06-01

    A simple and cost-effective sol-gel technique was employed to elaborate ZnO and Zn(1-x)CdxO thin films deposit by spin coating onto the c- and r-plane sapphire substrates. The deposited films were characterized for their structural, morphological and optical properties using high resolution X ray diffraction (HRXRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) as function of Cd incorporation and employed substrate. Higher Cd incorporation (4.5%) is obtained for ZnCdO layer deposited on r-plane sapphire, which is confirmed by the greatest energy shift (110 meV) to lower energy measured by low temperature photoluminescence. X-ray diffraction study revealed that all films are polycrystalline with a hexagonal wurtzite structure. A preferred orientation along [001] and [110] direction is obtained respectively for layer deposited on c- and r-plane sapphire. However, the (002) and (110) XRD layers peak were shifted towards the lower 2θ values after Cd incorporation showing a slight variation of cell parameters. SEM and AFM image show no very significant variation in the morphology of the layers depending on the substrate orientation and Cd content incorporated. A mixture of large and small hexagonal grains are obtained which are more pronounced for ZnCdO deposited on r-plane sapphire and their agglomeration leaves more empty space in films. The gas sensing performances were tested in NO2 containing air for different operating temperatures as function of Cd incorporation and sapphire substrate orientation. The experimental result exhibited that ZnCdO sensors deposited on r-plane sapphire shows a more better gas response with fast response and recovery time at moderate operating temperatures as Cd contend increase.

  10. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

    SciTech Connect

    Kundys, D. Sutherland, D.; Badcock, T. J.; Dawson, P.; Schulz, S.; Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.

    2014-03-21

    We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

  11. GaN grown on nano-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

    2015-04-01

    High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

  12. Design and preparation of laser film on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Dang, Shao-kun; Xu, Jun-qi; Su, Jun-hong; Guo, Fang; Cheng, Yao-jin

    2014-08-01

    Sapphire crystal as a kind of good material has a good transmittance in the ultraviolet, visible, infrared, which was widely used in the high-intensity laser system as the window material. Anti-reflection thin films on sapphire substrate were commonly used in high-energy laser system in the middle infrared bands 3~5μm and these thin films are very easily damaged for high energy laser system. In this paper, we adopt thermal evaporation technique on the sapphire substrate was prepared by design of single layer and multilayer anti-reflection coatings system so that the infrared transmittance satisfy the design requirements. The results of transmittance and laser damage performance tests show that the anti-reflection coating of 3~5μm transmittance is more than 97% on average, Laser-induced damage threshold (LIDT) is more than 5J/cm2 (1064nm), which means that this method could obtain a high-quality laser film.

  13. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    NASA Technical Reports Server (NTRS)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  14. High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

    2003-01-01

    SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

  15. High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

    2004-01-01

    SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

  16. Ion beam enhanced adhesion of iron films to sapphire substrates

    SciTech Connect

    Pawel, J.E.; Romana, L.J. ); McHargue, C.J. ); Wert, J.J. )

    1991-01-01

    The effect of implantation of different ion species on the adhesion of iron films to sapphire substrates has been investigated. The implantation energies were adjusted to ensure the ion concentration profiles, damage profiles, and recoil distributions were the same for each species. For all implantations, the peak ion concentration was at the film-substrate interface. The adhesion of the films was measured by pull test and a scratch test. For a fluence of 1 {times} 10{sup 15} ions-cm{sup {minus}2}, implantation of Cr (300 keV) and Fe (320 keV) increased the bond strength whereas implantation of Ni (340 keV) did not. The effect is proposed to be due to changes in the interfacial energy resulting from the presence of the ion species at the interface. Only a narrow zone is affected; the mixing at the interface is less than 10 nm. 24 refs., 3 figs.

  17. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    NASA Technical Reports Server (NTRS)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced

  18. Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

    PubMed Central

    Yamauchi, Ryosuke; Hamasaki, Yosuke; Shibuya, Takuto; Saito, Akira; Tsuchimine, Nobuo; Koyama, Koji; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-01-01

    Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline α-Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates. PMID:26402241

  19. Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs

    NASA Astrophysics Data System (ADS)

    Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Sinitsyn, M. A.; Nikolaev, A. E.; Lundina, E. Yu.; Tsatsulnikov, A. F.

    2008-11-01

    We report a method of profiled sapphire substrate preparation and growth of InGaAlN light-emitting diode (LED) structures over these substrates. Sapphire substrates with textured front surface were prepared by the simple method of nanoscale gold drops formation on sapphire surface followed by etching in hot H 3PO 4 acid. Comparison of blue LEDs grown on standard (flat) and profiled sapphire substrates in one epitaxial process shows significant increase in output power due to increased light extraction without deterioration of other LED characteristics.

  20. Improving light-emitting diode performance through sapphire substrate double-side patterning

    NASA Astrophysics Data System (ADS)

    Ju Kang, Ho; Cho, Sang Uk; Kim, Eung Soo; Kim, Chang-Seok; Jeong, Myung Yung

    2013-02-01

    Here, we present a new double-side patterned sapphire substrate methodology that improves the efficiency of gallium nitride-light emitting diodes (GaN-LEDs). The light extraction efficiency of GaN-based LEDs was analyzed through the use of a ray-tracing simulation. The extraction efficiency was simulated using patterned sapphire substrate LEDs with a variety of shapes, depths, sizes, and spacing. Through the optimal patterning of the various factors, high extraction efficiency was realized and subsequently improved upon. The thermal LED characteristics were analyzed through the use of the COMSOL general heat transfer module. The LEDs patterned on the sapphire substrate were fabricated using nano imprint lithography. We found that the output power of the double-side patterned LED was 52% greater than that of a flat LED. The thermal resistance of the double side patterned LED was 9.5 K/W less than that found for the flat LED.

  1. Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Han, Seok Kyu; Lee, Hyo Sung; Lim, Dong Seok; Hong, Soon-Ku; Yoon, Nara; Oh, Dong-Cheol; Ahn, Byung Jun; Song, Jung-Hoon; Yao, Takafumi

    2011-05-15

    The authors report on the structural, optical, and electrical properties of Ga-doped a-plane (1120) ZnO films grown by plasma-assisted molecular beam epitaxy. Ga doping level was controlled by changing the Ga cell temperatures from 350 to 470 deg. C with an interval of 30 deg. C. With up to Ga cell temperatures of 440 deg. C, single crystalline Ga-doped a-plane ZnO films were grown; however, the sample with a Ga cell temperature of 470 deg. C showed polycrystalline features. The typical striated surface morphology normally observed from undoped ZnO films disappeared with Ga doping. ZnO films doped with Ga cell temperatures up to 440 deg. C did not show a significant change in full width at half maximum (FWHM) values of (1120) x-ray rocking curves by doping. The smallest FWHM values were 0.433 deg. ({phi}=90 deg.) and 0.522 deg. ({phi}=0 deg. ) for the sample with a Ga cell temperature of 350 deg. C. The polycrystalline ZnO film with excessive Ga doping at the Ga cell temperature of 470 deg. C showed significantly increased FWHM values. Hall measurements at room temperature (RT) revealed that electron concentration began to be saturated at the Ga cell temperature of 440 deg. C and electron mobility was drastically reduced at the Ga cell temperature of 470 deg. C. The carrier concentration of Ga-doped ZnO films were controlled from 7.2x10{sup 18} to 3.6x10{sup 20} cm{sup -3}. Anisotropic electrical properties (carrier concentration and Hall mobility) were observed in measurements by the van der Pauw method depending on the direction (c- or m-direction) for the undoped sample but not observed for the doped samples. RT photoluminescence (PL) spectra from the Ga-doped single crystalline ZnO films showed dominant near band edge (NBE) emissions with negligibly deep level emission. The NBE intensity in PL spectra increases with Ga doping.

  2. Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Nakamura, Atsushi; Miyasaka, Yuta; Temmyo, Jiro

    2012-04-01

    Few nanometers thick graphene layers were directly grown on a-plane (11bar 20) sapphire substrates by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as a carbon source and without any catalytic metal on the substrate surface. The growth relationship between the graphene layer and substrate was analyzed using a transmission electron microscope (TEM). The growth rate of graphene layers with different growth temperatures revealed that the Al atom act as a catalyst for synthesizing a graphitic material during the decomposition of ethanol. An optical transmittance and a sheet resistance of the graphene sheet directly grown on sapphire substrate were observed. SiO2/Si and n-6H-SiC substrates were also examined for graphene direct growth to discuss the catalytic behavior of Si atoms compared with Al atoms.

  3. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  4. About holographic lithography for grating coupler fabrication in gallium nitride grown by MOVPE on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Dylewicz, R.; Patela, S.; Paszkiewicz, R.; Tlaczala, M.; Bartkiewicz, S.; Miniewicz, A.

    2005-09-01

    The use of the holographic lithography method for sub-nano pattering of photoresist layer deposited on bare sapphire substrate as well as on GaN grown by metaloorganic vapour phase epitaxy on Al2O3 is reported. Positive photoresist Shipley SPR700 was first diluted with photoresist thinner and then spin-coated on prepared substrates to obtain layers of final thickness of 227nm. Thin photoresist layer was exposed in the holographic setup with wavelength of 355nm to produce the surface relief grating. After development SEM observations reveled well-defined valleys and ridges of diffraction grating in SPR700 deposited on gallium nitride layer whereas the whole structure on sapphire was strongly affected by the speckles created by reflection from the unpolished back surface of the sapphire substrate. Latter, we confirmed with transmission spectroscopy, that even small amount of light transmitted through the substrate, which is back reflected by the unpolished back-surface of sapphire, canstrongly disturb nano-sized features in photoresist.

  5. Self-assembly of gold nanoparticles on a single crystalline sapphire substrate

    NASA Astrophysics Data System (ADS)

    Takahashi, Hiroyuki; Shirahata, Naoto; Narushima, Takashi; Yonezawa, Tetsu

    2012-12-01

    Single crystalline sapphire is an atomically flat substrate with a high transparency in a wide wavelength region. However, its surface is chemically stable so that the modification by a self-assembled monolayer is somewhat difficult. We have used a H2O2 treatment at 70 °C to activate the surface and modified with a silan coupling reagent. The modification of the surface is discussed with the water contact angle. Immobilization of citrate-stabilized anionic gold nanoparticles on a cationically modified sapphire surface was carried out.

  6. Structure-property correlation in epitaxial (2 0 0) rutile films on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Bayati, M. R.; Joshi, Sh.; Molaei, R.; Narayan, R. J.; Narayan, J.

    2012-03-01

    We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using φ-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 -1 0), and rutile(0 1 0)||sapphire(1 -2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV-VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation.

  7. Fabrication of a new substrate for atomic force microscopic observation of DNA molecules from an ultrasmooth sapphire plate.

    PubMed Central

    Yoshida, K; Yoshimoto, M; Sasaki, K; Ohnishi, T; Ushiki, T; Hitomi, J; Yamamoto, S; Sigeno, M

    1998-01-01

    A new stable substrate applicable to the observation of DNA molecules by atomic force microscopy (AFM) was fabricated from a ultrasmooth sapphire (alpha-Al2O3 single crystal) plate. The atomically ultrasmooth sapphire as obtained by high-temperature annealing has hydrophobic surfaces and could not be used for the AFM observation of DNA. However, sapphire treated with Na3PO4 aqueous solution exhibited a hydrophilic character while maintaining a smooth surface structure. The surface of the wet-treated sapphire was found by x-ray photoelectron spectroscopy and AFM to be approximately 0.3 nm. The hydrophilic surface character of the ultrasmooth sapphire plate made it easy for DNA molecules to adhere to the plate. Circular molecules of the plasmid DNA could be imaged by AFM on the hydrophilic ultrasmooth sapphire plate. PMID:9545030

  8. Fabrication of Nanodot Decorated Sapphire Substrates for Abbreviated Growth Mode Deposition of Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Biser, Jeffrey M.

    The overarching theme of this body of work is the development and demonstration of sapphire substrates with sub-micron scale surface features laid out in arrays with controlled shape, size, and distribution. The key contributions of the work are: (1) the collaborative demonstration that such substrates enable novel GaN fabrication options like the Abbreviated Growth Mode (AGM) approach that can lead to lower cost, higher quality LED devices, (2) the proof-of-concept demonstration that large scale surface patterning with the use of anodic aluminum oxide (AAO) templates is a feasible approach for creating low-cost patterns that should be compatible with AGM, and (3) that the Aluminum-to-sapphire conversion process used to fabricate the surface structures has distinct zones of behavior with regard to feature size and temperature that can be used to suggest an optimized set of process conditions.

  9. Large-area YBa2Cu3O(7-delta) thin films on sapphire for microwave applications

    NASA Technical Reports Server (NTRS)

    Cole, B. F.; Liang, G.-C.; Newman, N.; Char, K.; Zaharchuk, G.; Martens, J. S.

    1992-01-01

    We have deposited YBa2Cu3O(7-delta) (YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1 0 -1 0) sapphire, and R-plane (1 -1 0 2) sapphire is buffered by CeO2. Rs values of 450-620 microhms at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 microohms for a 5-cm-diam wafer and 700 microohms for 1 x 1 sq cm samples.

  10. Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

    NASA Astrophysics Data System (ADS)

    Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

    2016-04-01

    A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

  11. Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Chang, Chun-Ming; Tseng, Shih-Feng; Lee, Chao-Te; Hsiao, Wen-Tse; Yeh, Jer-Liang A.; Chiang, Donyau

    2014-03-01

    Dual photoresist complimentary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the sub-micro pit patterns on a sapphire surface. The oxide photoresist is patterned by the direct laser writing and the developed mark size decreases to a smaller value than the laser spot size due to the thermal lithography. The small developed pit diameter is one of the advantages using oxide photoresist. The oxide photoresist possesses strong etching resistance against the oxygen plasma but shows no resistance against the chlorine plasma. The chlorine plasma is a necessary component to etch the sapphire during the ion-coupled-plasma reactive-ion-etching process because of sapphire's mechanical hardness and chemical stability. However, the characteristics of organic resist SU8 are opposite to that of oxide photoresist and possess moderate resistance against chlorine plasma but show no resistance to oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported here. The dependence of the laser power on the developed mark sizes and morphologies is illustrated by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated. Images of patterned pits on the large commercial sapphire substrates are also shown.

  12. Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography

    NASA Astrophysics Data System (ADS)

    Dai, LongGui; Yang, Fan; Yue, Gen; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2014-11-01

    Generally, nano-scale patterned sapphire substrate (NPSS) has better performance than micro-scale patterned sapphire substrate (MPSS) in improving the light extraction efficiency of LEDs. Laser interference lithography (LIL) is one of the powerful fabrication methods for periodic nanostructures without photo-masks for different designs. However, Lloyd's mirror LIL system has the disadvantage that fabricated patterns are inevitably distorted, especially for large-area twodimensional (2D) periodic nanostructures. Herein, we introduce two-beam LIL system to fabricate consistent large-area NPSS. Quantitative analysis and characterization indicate that the high uniformity of the photoresist arrays is achieved. Through the combination of dry etching and wet etching techniques, the well-defined NPSS with period of 460 nm were prepared on the whole sapphire substrate. The deviation is 4.34% for the bottom width of the triangle truncated pyramid arrays on the whole 2-inch sapphire substrate, which is suitable for the application in industrial production of NPSS.

  13. Micromechanical properties of silicate glass films on sapphire substrates

    SciTech Connect

    Zagrebelny, A.V.; Carter, C.B.

    1998-12-31

    The deformation of thin layers of glass on crystalline materials has been examined using newly developed experimental methods for nanomechanical testing. Continuous films of anorthite (CaAl{sub 2}Si{sub 2}O{sub 8}), celsian (BaAl{sub 2}Si{sub 2}O{sub 8}), and monticellite (CaMgSiO{sub 4}) were deposited onto Al{sub 2}O{sub 3} surfaces by pulsed-laser deposition (PLD). Mechanical properties such as Young`s modulus and hardness were probed with a high-resolution depth-sensing indentation instrument. Nanomechanical testing, combined with AFM in-situ imaging of the deformed regions, allowed force-displacement measurements and imaging of the same regions of the specimen before and immediately after indentation. Emphasis has been placed on examining how changes in the glass composition, residual stress introduced into the films, effect of film`s heat-treatment, and the effect of substrate crystallographic orientation will affect the mechanical properties of silicate-glass films.

  14. Preparation of Fe-doped colloidal SiO(2) abrasives and their chemical mechanical polishing behavior on sapphire substrates.

    PubMed

    Lei, Hong; Gu, Qian; Chen, Ruling; Wang, Zhanyong

    2015-08-20

    Abrasives are one of key influencing factors on surface quality during chemical mechanical polishing (CMP). Silica sol, a widely used abrasive in CMP slurries for sapphire substrates, often causes lower material removal rate (MRRs). In the present paper, Fe-doped colloidal SiO2 composite abrasives were prepared by a seed-induced growth method in order to improve the MRR of sapphire substrates. The CMP performance of Fe-doped colloidal SiO2 abrasives on sapphire substrates was investigated using UNIPOL-1502 CMP equipment. Experimental results indicate that the Fe-doped colloidal SiO2 composite abrasives exhibit lower surface roughness and higher MRR than pure colloidal SiO2 abrasives for sapphire substrates under the same testing conditions. Furthermore, the acting mechanism of Fe-doped colloidal SiO2 composite abrasives in sapphire CMP was analyzed by x-ray photoelectron spectroscopy. Analytical results show that the Fe in the composite abrasives can react with the sapphire substrates to form aluminum ferrite (AlFeO3) during CMP, which promotes the chemical effect in CMP and leads to improvement of MRR. PMID:26368752

  15. Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates.

    PubMed

    Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang

    2015-06-23

    Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials. PMID:25961515

  16. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  17. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    NASA Astrophysics Data System (ADS)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  18. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

    NASA Astrophysics Data System (ADS)

    Kim, Y. H.; Ruh, H.; Noh, Y. K.; Kim, M. D.; Oh, J. E.

    2010-03-01

    The microstructural properties of a GaN layer grown on a patterned sapphire substrate (PSS) were studied in detail using transmission electron microscope techniques to determine dislocation and growth behaviors. Regular and uniform recrystallized GaN islands were observed on the protruding pattern. On a flat sapphire surface, the crystallographic orientation relationship of ⟨1¯21¯0⟩GaN on FS//⟨11¯00⟩sapphire and {11¯01}GaN on FS//{12¯13}sapphire existed between the GaN and the substrate. On the other hand, the orientation relationship of ⟨1¯21¯0⟩GaN layer//⟨1¯21¯0⟩GaN island on IS//⟨11¯00⟩sapphire and {11¯01}GaN layer//{0002}GaN island on IS//{12¯13}sapphire was confirmed among the GaN layer, the recrystallized GaN islands on an inclined sapphire surface and the PSS. The flat surface among the protruding patterns began to fill rapidly with GaN. Then, the GaN gradually overgrew the protruding pattern and coalesced near the summit as the growth time increased. The generation of threading dislocations was observed in the vicinity of the coalescence points near the top of the protruding patterns.

  19. Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Yano, Mitsuaki; Koike, Kazuto; Matsuo, Masayuki; Murayama, Takayuki; Harada, Yoshiyuki; Inaba, Katsuhiko

    2016-09-01

    Molecular beam epitaxy of tungsten trioxide (WO3) on (01 1 bar 2)-oriented (r-plane) sapphire substrates and molybdenum trioxide (MoO3) on the WO3 was studied by focusing on their crystallogrhaphic properties. Although polycrystalline monoclinic (γ-phase) WO3 films were grown at 500 °C and they became single-crystalline (0 0 1)-oriented γ-phase at 700 °C, the latter films were oxygen-deficient from stoichiometry and contained dense and deep thermal etchpits. By using a two-step growth method where only the initial 15 nm was grown at 700 °C and the rest part was grown at 500 °C, (0 0 1)-oriented γ-phase single-crystalline WO3 films with stoichiometric composition and smooth surface were obtained. On top of the 15-nm-thick WO3 initiation layer, (1 1 0)-oriented orthorhombic (α-phase) MoO3 films with smooth surface were obtained.

  20. Tilt growth of CdTe epilayers on sapphire substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Ebe, H.; Sawada, A.; Maruyama, K.; Nishijima, Y.; Shinohara, K.; Takigawa, H.

    1991-12-01

    We studied model lattice matching in the growth direction by tilt growth and found that the ratio of the tilt angle of the epilayer (α) to the offset angle of the substrate (θ) had a maximum at α / θ = 0.73, independent of the offset angle. Experimental plots of the ratio versus the full width at half maximum (FWHM) of (333) CdTe rocking curves in double-crystal X-ray diffraction show that the ratio ranges from 0.05 to 0.6 while the FWHM varies from 1100 to 400 arc sec. This result suggests that the lattice inclination orients the lattice structure perpendicular to the CdTe-sapphire heterointerface and that the tilt angle reduces defects such as dislocations and stacking faults. Most epilayers grown on sapphire substrates with offset angles above 3° were confirmed to have a α / θ ratio below 0.2. This suggests that crystal defects may be generated by shearing stress due to large offset angles. Greater defect density lowers the ratio and degrades crystallinity.

  1. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, Gang Seok; Lee, Chanmi; Jeon, Hunsoo; Lee, Chanbin; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Lee, Jae Hak; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2016-05-01

    Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS.

  2. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

    NASA Astrophysics Data System (ADS)

    Cicek, E.; Vashaei, Z.; McClintock, R.; Bayram, C.; Razeghi, M.

    2010-06-01

    GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substrates exhibited a dark current density of 2.7×10-4 A/cm2 whereas APDs grown on FS-GaN substrates had a significantly lower dark current density of 2.1×10-6 A/cm2. Under linear-mode operation, APDs grown on FS-GaN achieved avalanche gain as high as 14 000. Geiger-mode operation conditions were studied for enhanced SPDE. Under front-illumination the 625-μm2-area APD yielded a SPDE of ˜13% when grown on sapphire substrates compared to more than 24% when grown on FS-GaN. The SPDE of the same APD on sapphire substrate increased to ˜30% under back-illumination—the FS-GaN APDs were only tested under front illumination due to the thick absorbing GaN substrate.

  3. Graphite Thin Films Consisting of Nanograins of Multilayer Graphene on Sapphire Substrates Directly Grown by Alcohol Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Miyasaka, Yuta; Nakamura, Atsushi; Temmyo, Jiro

    2011-04-01

    Graphene has been attracting a strong interest as a transparent electrode as well as a THz nanoelectronic device owing to its unique properties. To date, large-area graphene growth has been realized by chemical vapor deposition (CVD) with a catalyst metal. To avoid the transfer of segregated graphene, we have examined directly graphite thin film growth on nonpolar a-sapphire substrates without any catalyst metal by alcohol CVD. Graphite thin films consisting of nanograins of multilayer graphene on a-sapphire substrates were verified by a combination of transmission electron spectroscopy (TEM), and Raman analyses, and optical transparent and sheet resistance measurements.

  4. Growth and Characterization of III-Nitride LEDs on Vicinal Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Khan, N.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2006-03-01

    GaN and related III-N alloys have great potential applications in optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs) and high power electronic devices such as transistors. For improved performance and greater versatility of these devices, it is essential to improve the quality of materials and devices. It has been reported that growth on vicinal or misaligned substrates compared to flat ones, lead to smoother and higher crystalline quality thin films. Improved brightness and quantum efficiency, and a reduction of the forward current at which maximum quantum efficiency occurs are among the improved optical properties resulting from the use of misaligned substrates and a thick base layer. We report on the characteristics of InGaN based blue/green LEDs grown by metal organic chemical vapor deposition (MOCVD) on specially fabricated dome shaped sapphire substrates. These dome shaped substrates provide varying degrees of off-cut within a single wafer. Surface morphologies, crystalline qualities and emission properties across the entire wafer surface have been mapped by various techniques, including optical and atomic force microscopy (AFM), x-ray diffraction and electroluminescence and photoluminescence spectroscopy. The results are compared with those of blue/green LEDs grown on conventional on-axis substrates.

  5. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  6. Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Tendille, Florian; Hugues, Maxime; Vennéguès, Philippe; Teisseire, Monique; De Mierry, Philippe

    2015-06-01

    Thanks to the use of two successive selective growths by metal organic chemical vapor deposition reactor, high quality semipolar (11-22) GaN with a homogenous defect repartition over the surface was achieved. The procedure starts with a first selective growth on a patterned sapphire substrate, leading to continuous stripes of three dimensional (3D) GaN crystals of low defect density. Then, a second selective growth step is achieved by depositing a SiNx nano-mask and a low temperature GaN nano-layer on the top of the GaN stripes. Hereby, we demonstrate an original way to obtain a homoepitaxial selective growth on 3D GaN crystals by taking advantage of the different crystallographic planes available. Basal stacking faults (BSFs) are generated during this second selective growth but could be eliminated by using a three-step growth method in which elongated voids are created above the defective area. For a fully coalesced sample grown using the 2 step method, dislocation density of 1.2 × 108 cm-2 and BSFs density of 154 cm-1 with a homogenous distribution have been measured by cathodoluminescence at 80 K. Consequently the material quality of this coalesced semipolar layer is comparable to the one of polar GaN on c-plane sapphire.

  7. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    NASA Technical Reports Server (NTRS)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  8. High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Mueller, Carl H.; Croke, Edward T.; Alterovitz, Samuel A.

    2003-01-01

    For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

  9. Introduction of the moth-eye patterned sapphire substrate technology for cost-effective high-performance LEDs

    NASA Astrophysics Data System (ADS)

    Naniwae, K.; Mori, M.; Kondo, T.; Suzuki, A.; Kitano, T.; Kamiyama, S.; Iwaya, M.; Takeuchi, T.; Akasaki, I.

    2013-03-01

    The improvement of the performance and the reduction of the cost for LEDs using the moth-eye patterned sapphire substrate (MPSS) were investigated. TEM and CL observation results clearly show that the MPSS can provide a thinner GaN template of equal or higher quality than the micron scale patterned sapphire substrate (PSS) since the MPSS only has a submicron scale structure. A 3-μm-thick high quality GaN template on the MPSS with a dislocation density of 1.9×108 cm-2 has been demonstrated. The LEDs on MPSS with a 600 nm pitch show the highest light output among the evaluated LEDs on various types of substrates as it is 1.52 times higher than that on flat sapphire substrate (FSS) and 1.18 times higher than that on PSS. The pitch dependence of the light output improvement is in excellent agreement with that of the transmittance at GaN/sapphire interface simulated by the rigorous coupled wave analysis. As a result of comparisons for the GaN templates and LEDs on MPSS, PSS and FSS, it can be concluded that MPSS provides the most cost effective solution for high performance LED.

  10. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  11. High-T(sub c) Edge-geometry SNS Weak Links on Silicon-on-sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Hunt, B.; Foote, M.; Pike, W.; Barner, J.; Vasquez, R.

    1994-01-01

    High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.

  12. Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique

    NASA Astrophysics Data System (ADS)

    Yamada, Takumi; Imanishi, Masayuki; Nakamura, Kosuke; Murakami, Kosuke; Imabayashi, Hiroki; Matsuo, Daisuke; Honjo, Masatomo; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2016-07-01

    GaN wafers are generally fabricated by separating a foreign substrate from a GaN layer using thermal stress; however, thermal stress also leads to the cracking of the GaN layer. In this study, we first succeeded in dissolving a sapphire substrate just after Na-flux growth by successively changing the flux content for GaN growth (Ga–Na–C) to that for dissolving sapphire (Ga–Na–C–Li) at the considered growth temperature. Hence, no thermal stress was induced in the grown GaN crystals, resulting in a crack-free GaN substrate. We concluded that this process is a good candidate technique for supplying free-standing GaN substrates.

  13. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern

    NASA Astrophysics Data System (ADS)

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    2013-08-01

    A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [10bar 10]sapphire, the GaN films have a triangular structure that is formed by the GaN{10bar 11} facets. As the stripe direction rotates from [10bar 10]sapphire, nanosteps with a step height of around 80 nm are formed on the GaN{10bar 11} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0×108 cm-2 were achieved when the stripe direction was rotated 3° from [10bar 10]sapphire. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [10bar 10]sapphire.

  14. High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

    2003-01-01

    High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

  15. Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Nakasu, Taizo; Kizu, Takeru; Yamashita, Sotaro; Aiba, Takayuki; Hattori, Shota; Sun, Wei-Che; Taguri, Kosuke; Kazami, Fukino; Hashimoto, Yuki; Ozaki, Shun; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-04-01

    ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.

  16. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  17. AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

    NASA Astrophysics Data System (ADS)

    Xubo, Song; Yuanjie, Lü; Guodong, Gu; Yuangang, Wang; Xin, Tan; Xingye, Zhou; Shaobo, Dun; Peng, Xu; Jiayun, Yin; Bihua, Wei; Zhihong, Feng; Shujun, Cai

    2016-04-01

    We report the DC and RF characteristics of AlN/GaN high electron mobility transistors (HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 mS/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 mW/mm has been demonstrated at a drain bias of 10 V. To the authors' best knowledge, this is the earliest demonstration of power density at the Ka band for AlN/GaN HEMTs in the domestic, and also a high frequency of load-pull measurements for AlN/GaN HEMTs. Project supported by the National Natural Science Foundation of China (No. 61306113).

  18. Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Bo, Liu; Jiayun, Yin; Yuanjie, Lü; Shaobo, Dun; Xiongwen, Zhang; Zhihong, Feng; Shujun, Cai

    2014-11-01

    InAlN/GaN heterostructures were grown on sapphire substrates by low-pressure metal organic chemical vapor deposition. The influences of NH3 flux and growth temperature on the In composition and morphologies of the InAlN were investigated by X-ray diffraction and atomic force microscopy. It's found that the In composition increases quickly with NH3 flux decrease. But it's not sensitive to NH3 flux under higher flux. This suggests that lower NH3 flux induces a higher growth rate and an enhanced In incorporation. The In composition also increases with the growth temperatures decreasing, and the defects of the InAlN have close relation with In composition. Unstrained InAlN with In composition of 17% is obtained at NH3 flux of 500 sccm and growth temperature of 790 °C. The InAlN/GaN heterostructure high electron mobility transistor sample showed a high two-dimensional electron gas (2DEG) mobility of 1210 cm2/(V·s) with the sheet density of 2.3 × 1013 cm-2 at room temperature.

  19. Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE

    NASA Astrophysics Data System (ADS)

    Bouzidi, M.; Benzarti, Z.; Halidou, I.; Chine, Z.; Bchetnia, A.; El Jani, B.

    2015-08-01

    GaN films were grown on silicon nitride (SiN) treated c-plane sapphire substrates in a home-made vertical reactor by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). In order to obtain different thickness layers, the growth procedure was interrupted at diverse stages using in-situ laser reflectometry. The structural and optical properties of obtained samples were investigated by high resolution X-ray diffraction (HRXRD) and photoreflectance (PR). In the 0.7-2 μm epilayer thickness range, the dislocation density decreases and remains roughly constant above this range. For fully coalesced layers, PR measurements at 11 K reveal the presence of well resolved excitonic transitions related to A, B and C excitons. A strong correlation between dislocation density and exciton linewidths is observed. Based on theoretical approaches and experimental results, the electronic band structure modification of GaN films due to isotropic biaxial strain was investigated. The valence band deformation potentials D3 and D4, interband hydrostatic deformation potentials a1 and a2, spin-orbit Δso and crystal field Δcr parameters were re-examined and found to be 8.2 eV, -4.1 eV, -3.8 eV, -12 eV, 15.6 meV and 16.5 meV, respectively.

  20. Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS)

    NASA Astrophysics Data System (ADS)

    Tsuchiya, T.; Umeda, S.; Sowa, Mihoko; Kondo, T.; Kitano, T.; Mori, M.; Suzuki, A.; Naniwae, K.; Sekine, H.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.

    2013-03-01

    The fabrication procedure of a moth-eye patterned sapphire substrate (MPSS), which can enhance the light extraction efficiency of nitride-based light emitting diodes (LEDs) has been examined. The optimization of surface morphology after the etching of the MPSS for high-quality GaN growth was also performed. Then, we fabricated MPSS samples with a fixed pitch of 460nm, and corn height ranging from 50 to 350nm. The light extraction efficiency of blue-LEDs grown on a series of MPSS was enhanced about 1.4 times compared with the devices grown on a flat sapphire substrate. We found that if corn height exceeds 150nm, the MPSS effect is sufficiently observed.

  1. Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

    SciTech Connect

    Song, Ning E-mail: n.song@student.unsw.edu.au; Huang, Yidan; Li, Wei; Huang, Shujuan; Hao, Xiaojing E-mail: n.song@student.unsw.edu.au; Wang, Yu; Hu, Yicong

    2014-03-03

    The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

  2. Vapor phase growth of GaN crystals with different morphologies and orientations on graphite and sapphire substrates

    SciTech Connect

    Miura, Akira; Shimada, Shiro . E-mail: shimashi@eng.hokudai.ac.jp

    2006-09-14

    GaN crystals were grown on graphite and sapphire substrates at 990-1050 deg. C by reaction of Ga{sub 2}O with flowing NH{sub 3}. Ga{sub 2}O gas was produced at a constant rate (1.3 wt% min{sup -1}) by reaction of Ga{sub 2}O{sub 3} with carbon at 1000-1060 deg. C. The effect of NH{sub 3} concentration (3-100 vol%) and the nature of the substrate on the morphology and orientation of the GaN crystals were determined by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and selected area electron diffraction. It was found that sheet and plate-like crystals grew at different orientations to the substrate with different NH{sub 3} concentrations and substrates.

  3. (001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Bick, D. S.; Sharath, S. U.; Hoffman, I.; Major, M.; Kurian, J.; Alff, L.

    2015-08-01

    We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.

  4. Semipolar (202{sup ¯}1) GaN and InGaN quantum wells on sapphire substrates

    SciTech Connect

    Leung, Benjamin; Wang, Dili; Kuo, Yu-Sheng; Xiong, Kanglin; Song, Jie; Chen, Danti; Park, Sung Hyun; Han, Jung; Hong, Su Yeon; Choi, Joo Won

    2014-06-30

    Here, we demonstrate a process to produce planar semipolar (202{sup ¯}1) GaN templates on sapphire substrates. We obtain (202{sup ¯}1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101{sup ¯}1) and (101{sup ¯}0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202{sup ¯}1) surface and establish a growth condition in N{sub 2} carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202{sup ¯}1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.

  5. Vapor phase epitaxy of CdTe on sapphire and GaAs

    NASA Astrophysics Data System (ADS)

    Kasuga, Masanobu; Futami, Hiroyuki; Iba, Yoshihiro

    1991-12-01

    CdTe films were deposited on three kinds of sapphire substrate and two kinds of GaAs substrate by open tube vapor transport. X-ray Laue diffraction study showed that CdTe(111) film grew on every kind of sapphire substrate used, i.e. on the (0001) basal plane, the (11 overline20)A plane and the (1 overline102)R plane, and that there exist a few degrees of tilt angel between CdTe(111) and the lattice plane of each substrate. The process of making the tilt angle may be explained by the atomistic mismatch model of the Cd and Al arrangement which is projected on the film-substrate interface. On GaAs(100), either CdTe(111) or CdTe(100) was obtained, whereas only a twin crystalline film was obtained on GaAs(111). These results are also consistent with the mismatch model of Cd and Ga atoms.

  6. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    SciTech Connect

    Oleson, Timothy A.; Sahai, Nita; Wesolowski, David J; Dura, Joseph A; Majkrzak, Charles F; Giuffre, Anthony J.

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  7. Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

    SciTech Connect

    Flemish, Joseph; Soer, Wouter

    2015-11-30

    Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed for highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.

  8. Characterization of CuAlO2 Thin Films Prepared on Sapphire Substrates by Reactive Sputtering and Annealing

    NASA Astrophysics Data System (ADS)

    Tsuboi, Nozomu; Moriya, Tomohiro; Kobayashi, Satoshi; Shimizu, Hidehiko; Kato, Keizo; Kaneko, Futao

    2008-01-01

    As-deposited films were prepared on sapphire substrates at 500-680 °C by alternately sputtering Cu and Al targets in Ar-diluted O2 gas atmosphere. The composition of the as-deposited films corresponded to that of the slightly oxygen-rich region of the CuO-CuAl2O4-Al2O3 system. The films as-deposited at 500 °C had an amorphous structure, while the films as-deposited at 680 °C had CuAl2O4 phase but no CuAlO2 phase. Annealing at 1050 °C in nitrogen flow caused a reduction in the molar fraction of oxygen, i.e., the composition of the annealed films with [Cu]/[Al] ≈1 corresponded to CuAlO2. The annealed films were predominated by the CuAlO2 phase. The preferential orientation of the films toward the c-axis normal to the substrate surface is due to the small lattice mismatch between the rhombohedral [010] of delafossite-type CuAlO2 and the hexagonal [1100] of the sapphire substrate. The annealed films had an absorption edge corresponding to the energy gap of CuAlO2 and exhibited p-type conductivity.

  9. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.

    PubMed

    Beardsley, Ryan; Akimov, Andrey V; Greener, Jake D G; Mudd, Garry W; Sandeep, Sathyan; Kudrynskyi, Zakhar R; Kovalyuk, Zakhar D; Patanè, Amalia; Kent, Anthony J

    2016-01-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures. PMID:27256805

  10. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

    PubMed Central

    Beardsley, Ryan; Akimov, Andrey V.; Greener, Jake D. G.; Mudd, Garry W.; Sandeep, Sathyan; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Kent, Anthony J.

    2016-01-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures. PMID:27256805

  11. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

    NASA Astrophysics Data System (ADS)

    Beardsley, Ryan; Akimov, Andrey V.; Greener, Jake D. G.; Mudd, Garry W.; Sandeep, Sathyan; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Kent, Anthony J.

    2016-06-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures.

  12. Substrate-induced disorder in V{sub 2}O{sub 3} thin films grown on annealed c-plane sapphire substrates

    SciTech Connect

    Brockman, J.; Samant, M. G.; Roche, K. P.; Parkin, S. S. P.

    2012-07-30

    We investigate the structural and electronic properties of V{sub 2}O{sub 3} thin films deposited by oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane sapphire substrates. Annealing the substrates before growth to produce ultra-smooth surfaces improved initial epitaxy, according to in situ reflection high-energy electron diffraction. Surprisingly, films deposited on annealed substrates had a more island-like surface, broader x-ray diffraction peaks, and an increased resistivity of V{sub 2}O{sub 3}'s normally metallic high-temperature phase. We attribute these results to enhanced strain coupling at the interface between the substrate and film, highlighting the vulnerability of V{sub 2}O{sub 3}'s strongly correlated metallic phase to crystalline defects and structural disorder.

  13. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    SciTech Connect

    Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.

    2006-08-15

    We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

  14. Enhanced ionic conduction at the film/substrate interface in LiI thin films grown on sapphire(0001)

    SciTech Connect

    Lubben, D.; Modine, F.A.

    1993-12-01

    The ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in-situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room temperature by sublimation in an ultra-high-vacuum system. The conductivity of the LiI parallel to the film/substrate interface was determined from frequency-dependent impedance measurements as a function of film thickness using Au interdigital electrodes deposited on the sapphire surface. The measurements show a conduction of {approximately}5 times the bulk value at the interface which gradually decreases as the film thickness is increased beyond 100 nm. This interfacial enhancement is not stable but anneals out with a characteristic log of time dependence. Fully annealed films have an activation energy for conduction ({sigma}T) of {approximately}0.47{plus_minus}.03 eV, consistent with bulk measurements. The observed annealing behavior can be fit with a model based on dislocation motion which implies that the increase in conduction near the interface is not due to the formation of a space-charge layer as previously reported but to defects generated during the growth process. This explanation is consistent with the behavior exhibited by CaF{sub 2} films grown under similar conditions.

  15. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Wang, Junxi; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin; Lan, Ding

    2014-02-15

    Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

  16. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Su, Xilin; Yun, Feng

    2016-07-01

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ˜20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  17. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Tadjer, Marko J.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Currie, Marc; Wheeler, Virginia D.; Freitas, Jaime A.; Greenlee, Jordan D.; Hite, Jennifer K.; Hobart, Karl D.; Eddy, Charles R.; Kub, Fritz J.

    2016-04-01

    Epitaxial growth of monoclinic β-Ga2O3 on a-plane and c-plane sapphire substrates by metalorganic vapor-phase epitaxy (MOVPE) is reported. Crystalline phase, growth rate (˜150 nm/h), and energy gap (˜4.7 eV) were determined by x-ray diffraction and optical reflectance measurements. Film density of ˜5.6 g/cm3 measured by x-ray reflectivity suggests the presence of vacancies, and the O-rich growth regime implies the presence of Ga vacancies in the films. O/Ga ratio of 1.13, as measured by XPS for Ga2O3 grown on c-plane Al2O3, suggests that, near the surface, the film is O-deficient. Atomic force microscopy revealed smoother, smaller grain size when films were grown on c-plane Al2O3. Raman spectroscopy suggested inclusions of α-Ga2O3, likely present at the sapphire interface due to growth on nonnative substrate. Samples of β-Ga2O3 were selectively implanted with Si in the source/drain regions and subsequently annealed at 1000°C for 10 min. Normally-off transistors (V T ≅ 4.7 V) with 20-nm-thick Al2O3 gate oxide were fabricated, and a maximum drain-source current of 4.8 nA was measured.

  18. Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant

    NASA Astrophysics Data System (ADS)

    de Pablos-Martin, A.; Tismer, S.; Benndorf, G.; Mittag, M.; Lorenz, M.; Grundmann, M.; Höche, Th.

    2016-07-01

    Two sapphire substrates are tightly bonded through a BaTiAl6O12-glass thin film, by irradiation with a nanosecond laser. After the laser process, the composition of the glass sealant changes, due to incorporation of Al2O3 from the upper substrate. After annealing of the bonded samples (950 °C for 30 minutes) crystalline structures are observed by TEM which are attributed to crystalline BaTiAl6O12. These crystals together with Al2O3:Ti centers are the responsible of the observed strong blue luminescence of the laser irradiated region upon UV excitation. The structural and optical characterizations of the bonded samples clarify the laser soldering procedure as well as the origin of the luminescence. Bond quality and bond strength were evaluated by scanning acoustic microscopy (SAM) and tensile tests, which results in a tensile stress of nearly 13 MPa, which is an acceptable value for glass sealants.

  19. Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates

    NASA Astrophysics Data System (ADS)

    Oshima, Yuichi; Víllora, Encarnación G.; Shimamura, Kiyoshi

    2015-05-01

    The halide vapor phase epitaxy of α-Ga2O3 is demonstrated for the first time. The films are twin-free and heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors. X-ray ω-2θ and pole figure measurements reveal that the film is single-crystalline (0001) α-Ga2O3 with no detectable formation of β-Ga2O3. The optical bandgap is determined to be 5.16 eV based on the transmittance spectrum. The growth rate monotonically increases with the partial pressures of the raw material gases, reaching approximately 150 µm/h, which is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques, such as mist CVD or MBE.

  20. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.

    PubMed

    You, Yao-Hong; Su, Vin-Cent; Ho, Ti-En; Lin, Bo-Wen; Lee, Ming-Lun; Das, Atanu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2014-01-01

    This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs). PMID:25392706

  1. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

    PubMed Central

    2014-01-01

    This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs). PMID:25392706

  2. High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Ponchak, George E.; Mueller, Carl H.; Croke, Edward T.

    2004-01-01

    SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.

  3. Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE

    NASA Astrophysics Data System (ADS)

    Lu, Dianqing; Zhang, Rong; Yu, Huiqiang; Xiu, Xiangqian; Li, Xuefei; Gu, Shulin; Shen, Bo; Shi, Yi; Zheng, Youdou

    2004-06-01

    The growth front evolution of gallium nitride (GaN) thin films deposited on sapphire substrates by HVPE has been studied with atomic force microscope (AFM). The dynamic scaling characteristics are observed during the deposition process. After numerical correlation analysis, the roughness exponent α=0.75 and the growth exponent β=0.59 are obtained by using self-affine model. The roughening mechanisms of GaN thin films has been simply investigated, and the results indicate that one or more roughening mechanisms are present in the growth process in addition to stochastic roughening and diffusion effect. The computed values of the correlations in the input noise are very close to our results.

  4. Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts

    NASA Astrophysics Data System (ADS)

    Kuppulingam, B.; Bhalerao, G. M.; Singh, Shubra; Baskar, K.

    2016-07-01

    Systematic reaction has been used to control the vapor-liquid-solid growth of gallium nitride nanowires (NWs) using different catalysts. GaN NWs were grown using Cu, Au, Pd/Au alloy catalysts on c-plane sapphire substrate. XRD and Raman analysis revealed the crystalline wurtzite phase of GaN synthesized at 900 °C. High density GaN NWs were studied using SEM and HRTEM. Elemental composition and impurities were analyzed by EDX. Diameter of individual NW, grown using Au catalyst is found to be ~50 nm. The diameter of NWs grown with the help of Cu catalyst was found to be ˜65 nm, whereas with Pd/Au catalyst, the diameter was about 100-200 nm. NBE emission observed from PL spectra for Cu catalyst (377 nm), Au catalyst (372 nm) as well as Pd/Au catalyst (385 nm) growth of GaN NWs respectively has been presented and discussed.

  5. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    SciTech Connect

    Lin, Zhiyu; Zhang, Jincheng Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue; Su, Xujun; Shi, Xuefang

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  6. Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Bayati, Mohammad Reza

    The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their

  7. The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

    NASA Astrophysics Data System (ADS)

    Arslan, Engin; Bütün, Serkan; Lisesivdin, S. Bora; Kasap, Mehmet; Ozcelik, Suleyman; Ozbay, Ekmel

    2008-05-01

    In the present study, we reported the results of the investigation of electrical and optical measurements in AlxGa1-xN/GaN heterostructures (x =0.20) that were grown by way of metal-organic chemical vapor deposition on sapphire and SiC substrates with the same buffer structures and similar conditions. We investigated the substrate material effects on the electrical and optical properties of Al0.20Ga0.80N/GaN heterostructures. The related electrical and optical properties of AlxGa1-xN/GaN heterostructures were investigated by variable-temperature Hall effect measurements, photoluminescence (PL), photocurrent, and persistent photoconductivity (PPC) that in turn illuminated the samples with a blue (λ =470 nm) light-emitting diode (LED) and thereby induced a persistent increase in the carrier density and two-dimensional electron gas (2DEG) electron mobility. In sample A (Al0.20Ga0.80N/GaN/sapphire), the carrier density increased from 7.59×1012 to 9.9×1012 cm-2 via illumination at 30 K. On the other hand, in sample B (Al0.20Ga0.80N/GaN/SiC), the increments in the carrier density were larger than those in sample A, in which it increased from 7.62×1012 to 1.23×1013 cm-2 at the same temperature. The 2DEG mobility increased from 1.22×104 to 1.37×104 cm-2/V s for samples A and B, in which 2DEG mobility increments occurred from 3.83×103 to 5.47×103 cm-2/V s at 30 K. The PL results show that the samples possessed a strong near-band-edge exciton luminescence line at around 3.44 and 3.43 eV for samples A and B, respectively. The samples showed a broad yellow band spreading from 1.80 to 2.60 eV with a peak maximum at 2.25 eV with a ratio of a near-band-edge excitation peak intensity up to a deep-level emission peak intensity ratio that were equal to 3 and 1.8 for samples A and B, respectively. Both of the samples that were illuminated with three different energy photon PPC decay behaviors can be well described by a stretched-exponential function and relaxation time

  8. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2016-06-01

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (ScxAl1-xN) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S21 measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  9. Improved light extraction of nitride-based flip-chip light-emitting diodes by forming air voids on Ar-implanted sapphire substrate

    NASA Astrophysics Data System (ADS)

    Yeh, Yu-Hsiang; Sheu, Jinn-Kong; Lee, Ming-Lun; Chen, Po-Cheng; Yang, Yu-Chen; Yen, Cheng-Hsiung; Lai, Wei-Chih

    2014-09-01

    GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy the light interference and thereby increase the LEE of GaN-based flip-chip LEDs. The epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on AIAS was greater than that of LEDs grown on implantation free sapphire substrates. At an injection current of 700 mA, the output power of LEDs grown on AIAS was enhanced by 20% compared with those of LEDs without embedded air voids. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs. This study on FC LEDs with embedded light-scattering layer highlights the potential application of these LEDs as an alternative to conventional patterned sapphire substrates for improving the LEE of GaN/sapphire-based LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 μm, the Lop could be enhanced over 60%.

  10. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

    2015-03-01

    We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

  11. Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications

    NASA Astrophysics Data System (ADS)

    Wuu, Dong-Sing; Ou, Sin-Liang; Horng, Ray-Hua; Ravadgar, Parvaneh; Wang, Tzu-Yu; Lee, Hsin-Ying

    2012-02-01

    The β-Ga2O3 films were grown on (0001) sapphire at 500 °C by metal organic chemical vapor deposition. In the analysis of crystal structure, we found that the (-201) oriented single crystal β-Ga2O3 epilayer can be obtained under low chamber pressure of 15 torr. Moreover, a metal-semiconductor-metal solar-blind deep ultraviolet photodetector was fabricated with the β-Ga2O3 epilayer. As the bias voltage is 5 V, the photodetector exhibits a relatively low dark current about 0.2 pA, which induced by the highly resistive nature of the β-Ga2O3 thin films. From the responsivity result, it can be observed that photodetector shows a maximum responsivity at 260 nm, revealing the β-Ga2O3 photodetector was really solar-blind. The responsivity of the photodetector was as high as 20.1 A/W with an applied bias of 5 V and an incident light wavelength of 260 nm. The improved performance is attributed to the high quality of β-Ga2O3 epilayer.

  12. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  13. A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates.

    PubMed

    Jeon, K S; Sung, J H; Lee, M W; Song, H Y; Shin, H Y; Park, W H; Jang, Y I; Kang, M G; Choi, Y H; Lee, J S; Ko, D H; Ryu, H Y

    2016-02-01

    We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(1 11) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy. PMID:27433673

  14. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect

    Crawford, Mary Hagerott; Olson, S. M.; Banas, M.; Park, Y. -B.; Ladous, C.; Russell, Michael J.; Thaler, Gerald; Zahler, J. M.; Pinnington, T.; Koleske, Daniel David; Atwater, Harry A.

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  15. Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 degrees C)

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian; Stalker, Amy R.

    2007-01-01

    This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature.

  16. Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 C)

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximillian; Stalker, Amy R.

    2007-01-01

    This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature

  17. Structural and optical properties of AgAlTe{sub 2} layers grown on sapphire substrates by closed space sublimation method

    SciTech Connect

    Uruno, A. Usui, A.; Kobayashi, M.

    2014-11-14

    AgAlTe{sub 2} layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe{sub 2} by X-ray diffraction. AgAlTe{sub 2} layers were grown to have a strong preference for the (112) orientation on both kinds of substrates. The variation in the orientation of grown layers was analyzed in detail using the X-ray diffraction pole figure measurement, which revealed that the AgAlTe{sub 2} had a preferential epitaxial relationship with the c-plane sapphire substrate. The atomic arrangement between the (112) AgAlTe{sub 2} layer and sapphire substrates was compared. It was considered that the high order of the lattice arrangement symmetry probably effectively accommodated the lattice mismatch. The optical properties of the grown layer were also evaluated by transmittance measurements. The bandgap energy was found to be around 2.3 eV, which was in agreement with the theoretical bandgap energy of AgAlTe{sub 2}.

  18. Gold coated zinc oxide nanonecklaces as a SERS substrate.

    PubMed

    He, Lili; Shi, Jian; Sun, Xin; Lin, Mengshi; Yu, Ping; Li, Hao

    2011-04-01

    Faceted zinc oxide nanonecklace (ZnO NN) arrays were grown on r-plane sapphires along one direction (ZnO [0001] II sapphire [10-11] and ZnO (-12-10) II sapphire (01-12)) using chemical vapor deposition. After coated with 45 nm gold films and annealed at 250 degrees C for 30 seconds, the coated ZnO NNs exhibit satisfactory and stable surface enhanced Raman scattering (SERS) effects when tested with melamine and other chemicals. The limit of detection of melamine is 10(-5) mol/L and the analytical enhancement factor is 10(4), which is competitive to a commercial substrate. This study indicates that gold coated ZnO NN substrates have a great potential as SERS-active substrates in rapid detection of trace amount food contaminants such as melamine and other chemicals. PMID:21776731

  19. Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kim, Sang-Woo; Park, Hyun-Kyu; Yi, Min-Su; Park, Nae-Man; Park, Jong-Hyurk; Kim, Sang-Hyeob; Maeng, Sung-Lyul; Choi, Chel-Jong; Moon, Seung-Eon

    2007-01-01

    Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaN /c-Al2O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140nm and an average height of about 2μm were grown on a self-formed ZnO thin film during the growth on the GaN /c-Al2O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

  20. Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

    NASA Astrophysics Data System (ADS)

    Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

    2014-04-01

    The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

  1. Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures

    SciTech Connect

    Pant, Punam; Budai, John D; Aggarwal, R; Narayan, Roger; Narayan, Jagdish

    2009-05-01

    We have investigated two-step growth of high-quality epitaxial ZnO films, where the first layer--the buffer layer (nucleation layer template)--is grown at a low temperature (230-290 C) to induce a smooth (two-dimensional) growth. This is followed by growth at a moderate temperature {approx}430 C to form high-quality smooth ZnO layers for device structures. It was possible to reduce the growth temperature to 250-290 C and obtain a smooth epitaxial template layer on sapphire (0 0 0 1) substrates with surface roughness less than 1 nm. After the high-temperature growth, the film surface undulations (roughness) increased to about 2 nm, but it is still quite smooth. The calculation of c and a lattice parameters by high-resolution x-ray diffraction shows that the a lattice parameter is fully relaxed at the growth temperatures but the c lattice parameter is dependent on the defect concentration in the growing film. A decoupling between a and c lattice parameters of the films is observed, which leads to abnormal Poisson's ratios ranging from 0.08 to 0.54. The decoupling of the lattice parameters is analyzed based on growth characteristics and the presence of strain and defects in the grown films. We present our detailed studies on the nature of epitaxy, defects and interfaces by using comprehensive x-ray diffraction and high-resolution TEM studies.

  2. Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Yablonskii, G. P.; Gurskii, A. L.; Pavlovskii, V. N.; Lutsenko, E. V.; Zubialevich, V. Z.; Shulga, T. S.; Stognij, A. I.; Kalisch, H.; Szymakowski, A.; Jansen, R. H.; Alam, A.; Schineller, B.; Heuken, M.

    2005-02-01

    The carrier ambipolar diffusion length L of optically excited carriers in GaN epitaxial layers grown on sapphire substrate was estimated by an optical method using fitting of the experimental photoluminescence spectra recorded from the front and back sides of the samples by the theoretical equation describing light reflection, light absorption and carrier profile in the medium. The estimations were carried out in the range of excitation intensities from 5 W/cm 2 CW up to 1 MW/cm 2 (pulsed), using excitation at the wavelengths of 325, and 337.1 nm in order to vary the excited layer depth. It has been found that in the samples under study the value of L is about 120-130 nm and does not depend significantly on the excitation intensity up to 200 kW/cm 2. Further increase of excitation level leads to higher values of L about 150-170 nm, probably because of the electron-hole plasma expansion.

  3. The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates.

    PubMed

    Jue, Miyeon; Kim, Cheol-Woon; Kang, Seoung-Hun; Yoon, Hansub; Jang, Dongsoo; Kwon, Young-Kyun; Kim, Chinkyo

    2015-01-01

    Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1100)-orientation is favored over the (1103)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region with a large filling factor. This result suggests that the effective concentration determines the preferred orientation of GaN: the (1100)- and (1103)-orientations preferred at their low and high concentrations, respectively. Our computational study revealed that at a low coverage of Ga and N atoms, the local atomic arrangement resembles that on the (1103) surface, although the (1100) surface is more stable at their full coverage. Such a (1103)-like atomic configuration crosses over to the local structure resembling that on the (1100) surface as the coverage increases. Based on results, we determined that high effective concentration of Ga and N sources expedites the growth of the (1103)-orientation while keeping from transition to the (1100)-orientation. At low effective concentration, on the other hand, there is a sufficient time for the added Ga and N sources to rearrange the initial (1103)-like orientation to form the (1100)-orientation. PMID:26548446

  4. The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

    PubMed Central

    Jue, Miyeon; Kim, Cheol-Woon; Kang, Seoung-Hun; Yoon, Hansub; Jang, Dongsoo; Kwon, Young-Kyun; Kim, Chinkyo

    2015-01-01

    Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (100)-orientation is favored over the (10)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region with a large filling factor. This result suggests that the effective concentration determines the preferred orientation of GaN: the (100)- and (10)-orientations preferred at their low and high concentrations, respectively. Our computational study revealed that at a low coverage of Ga and N atoms, the local atomic arrangement resembles that on the (10) surface, although the (100) surface is more stable at their full coverage. Such a (10)-like atomic configuration crosses over to the local structure resembling that on the (100) surface as the coverage increases. Based on results, we determined that high effective concentration of Ga and N sources expedites the growth of the (10)-orientation while keeping from transition to the (100)-orientation. At low effective concentration, on the other hand, there is a sufficient time for the added Ga and N sources to rearrange the initial (10)-like orientation to form the (100)-orientation. PMID:26548446

  5. The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jue, Miyeon; Kim, Cheol-Woon; Kang, Seoung-Hun; Yoon, Hansub; Jang, Dongsoo; Kwon, Young-Kyun; Kim, Chinkyo

    2015-11-01

    Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (100)-orientation is favored over the (10)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region with a large filling factor. This result suggests that the effective concentration determines the preferred orientation of GaN: the (100)- and (10)-orientations preferred at their low and high concentrations, respectively. Our computational study revealed that at a low coverage of Ga and N atoms, the local atomic arrangement resembles that on the (10) surface, although the (100) surface is more stable at their full coverage. Such a (10)-like atomic configuration crosses over to the local structure resembling that on the (100) surface as the coverage increases. Based on results, we determined that high effective concentration of Ga and N sources expedites the growth of the (10)-orientation while keeping from transition to the (100)-orientation. At low effective concentration, on the other hand, there is a sufficient time for the added Ga and N sources to rearrange the initial (10)-like orientation to form the (100)-orientation.

  6. Characterization of critically cleaned sapphire single-crystal substrates by atomic force microscopy, XPS and contact angle measurements

    NASA Astrophysics Data System (ADS)

    Zhang, Dan; Wang, You; Gan, Yang

    2013-06-01

    A contaminant-free surface of single-crystal α-Al2O3 (or sapphire) substrates is key to the experimental studies of its surface and interfacial properties at ambient conditions. Here we critically evaluated methods reported in the literature using comprehensive surface analysis techniques including atomic force microscopy, XPS and contact angle measurements. We found that reported methods did not perform well in terms of removing both organic and particulate contaminants from the (0 0 0 1) basal surface. After thoroughly examining the cleaning effect of various chemical solutions and UV light and plasma irradiation, and based on modified RCA cleaning protocols, we proposed a new wet-cleaning method showing outstanding cleaning performance. This new reliable method will be very useful for the next-step surface chemistry study of single-crystal α-Al2O3. It was also demonstrated that AFM, due to its high spatial resolution and sensitivity as a local probe technique, was an indispensable tool for surface contamination control studies.

  7. Tl 2Ba 2CaCu 2O 8 thin film high frequency filters on 3 inch sapphire substrates

    NASA Astrophysics Data System (ADS)

    Schneidewind, H.; Manzel, M.; Stelzner, T.

    2002-08-01

    Modern communication systems require densely packed frequency channels in the expensive frequency bands. Therefore high temperature superconducting (HTS) high frequency filters are of increasing importance, taking advantage of their outstanding properties namely steep filter skirts, low insertion loss, and furthermore reduced mass and volume compared to conventional cavity or dielectric resonator systems. Within the framework of a German BMBF pilot project a HTS equiped satellite repeater will be developed to demonstrate the performance advantage of HTS. For that purpose we prepare filters on double-sided Tl 2Ba 2CaCu 2O 8 thin films on CeO 2 buffered 3 inch sapphire substrates. The HTS films are prepared in the two-step process by sputtering an amorphous thallium free precursor and following oxythallination. The critical temperature and spatial distribution of critical current density at 77 K, both measured by inductive techniques, show values above 100 K or 1 MA/cm 2, respectively. We use a dielectric resonator technique at 3.9 GHz and power levels up to some mT to determine the films surface resistance. We present measurements of input filters made from our double-sided 3 inch films.

  8. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation

    NASA Astrophysics Data System (ADS)

    Buzynin, Yu. N.; Vodop'yanov, A. V.; Golubev, S. V.; Drozdov, M. N.; Drozdov, Yu. N.; Luk'yanov, A. Yu.; Mansfeld, D. A.; Khrykin, O. I.; Shashkin, V. I.; Yunin, P. A.

    2015-03-01

    Hexagonal single-crystalline indium nitride (InN) films on (0001)-oriented sapphire (Al2O3) and (111)-oriented fianite (yttria-stabilized zirconia, YSZ) substrates and on (0001)-oriented GaN/Al2O3 templates have been grown at a record high rate of 10 μm/h by the method of metalorganic vapor phase epitaxy with nitrogen activation in plasma of electron cyclotron resonance discharge generated by gyrotron radiation. It is established that the use of fianite substrates significantly improves the structural perfection and photoluminescent properties of InN films as compared to those grown on sapphire and templates. Undoped InN films exhibit n-type conductivity with electron concentrations within n = 8.0 × 1019-4.9 × 1020 cm-3 and room-temperature mobilities up to 180 cm2/(V s).

  9. Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Suzuki, Norihiro; Kaneko, Kentaro; Fujita, Shizuo

    2013-02-01

    We report the fabrication of rhombohedral corundum-structured indium oxide (α-In2O3) thin films, which can complete a semiconductor quaternary alloy system with α-Al2O3 and α-Ga2O3, on sapphire substrates with α-Fe2O3 buffer layers. X-ray diffraction showed the formation of α-In2O3, and the α-In2O3 film exhibited n-type semiconductor properties with electron concentration of 1.2×1018 cm-3 and electron mobility of 83 cm2/Vs. The α-In2O3 took grain structure with the lateral sizes of 300-600 nm, and in a grain area α-In2O3 grew epitaxially on a sapphire substrate.

  10. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

    NASA Astrophysics Data System (ADS)

    Sang, Wei-hua; Lin, Lu; Wang, Long; Min, Jia-hua; Zhu, Jian-jun; Wang, Min-rui

    2016-05-01

    Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time.

  11. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching

    PubMed Central

    2013-01-01

    This study reports on the use of a template that is made of silver nanoparticles (ANPs) that are dispersed on a patterned sapphire substrate (PSS) to improve the light output power of GaN-based light-emitting diodes (LEDs). The dipping of a sapphire substrate in hot H2SO4 solution generates white reaction products that are identified as a mixture of polycrystalline aluminum sulfates. These white reaction products can act as a natural etching mask in the preparation of an ANP-coated PSS (PSS-ANP) template. The optimal annealing temperature and time, surface morphology, and optical characteristics of the PSS-ANP template were investigated. The light output power of an LED that is bonded to the PSS-ANP template is approximately double than that of an LED that is not. PMID:23566549

  12. Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

    SciTech Connect

    Park, Jinsub; Yao, Takafumi

    2012-10-15

    We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al{sub 2}O{sub 3} substrates. For the periodically inverted array of ZnO polarity, CrN and Cr{sub 2}O{sub 3} polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.

  13. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties

    SciTech Connect

    Novikov, H. A.; Batalov, R. I. Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Galkin, K. N.; Galkin, N. G.; Chernev, I. M.; Ivlev, G. D.; Prokop’ev, S. L.; Gaiduk, P. I.

    2015-06-15

    The structural and optical properties of thin Ge films deposited onto semiconducting and insulating substrates and modified by pulsed laser radiation are studied. The films are deposited by the sputtering of a Ge target with a low-energy Xe{sup +} ion beam. Crystallization of the films is conducted by their exposure to nanosecond ruby laser radiation pulses (λ = 0.694 μm) with the energy density W = 0.2−1.4 J cm{sup −2}. During pulsed laser treatment, the irradiated area is probed with quasi-cw (quasi-continuous-wave) laser radiation (λ = 0.532 and 1.064 μm), with the reflectance recorded R(t). Experimental data on the lifetime of the Ge melt are compared with the results of calculation, and good agreement between them is demonstrated. Through the use of a number of techniques, the dependences of the composition of the films, their crystal structure, the level of strains, and the reflectance and transmittance on the conditions of deposition and annealing are established.

  14. Influences of growth parameters on the film formation of hexagonal boron nitride thin films grown on sapphire substrates by low-pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Umehara, Naoki; Masuda, Atsushi; Shimizu, Takaki; Kuwahara, Iori; Kouno, Tetsuya; Kominami, Hiroko; Hara, Kazuhiko

    2016-05-01

    Hexagonal boron nitride (h-BN) films were grown on c-plane sapphire substrates by low-pressure chemical vapor deposition with BCl3 and NH3 as the boron and nitrogen sources, respectively, and the influences of growth parameters on the film quality were investigated for samples with a thickness of about 1 µm. The dependence of X-ray diffraction on the growth temperature (T g) indicated that the crystalline quality is most improved in the sample grown at 1200 °C, in which the epitaxial relationship of {100}h-BN ∥ {110}sapphire and {001}h-BN ∥ {001}sapphire was confirmed. This condition enhanced lateral growth, resulting in the formation of grains with flat top surfaces. The T g dependence was discussed in relation to the amorphous AlN formed on the substrate surface and the reaction between BCl3 and NH3 in the vapor phase. The correlation between the structural and luminescent properties, which was found from the T g dependence of CL, was also discussed.

  15. Estimation of bowing in hetero-epitaxial GaN-on-sapphire substrate at elevated temperatures by X-ray diffraction rocking curve measurement

    NASA Astrophysics Data System (ADS)

    Aida, Hideo; Kim, Seong-woo; Suzuki, Toshimasa

    2015-02-01

    A new approach to estimate bowing in hetero-epitaxial films-on-single crystalline substrate at elevated temperatures using X-ray diffraction (XRD) rocking curve measurement is proposed. To demonstrate the new approach, GaN-on-sapphire substrate was subjected to XRD rocking curve measurements for sapphire (0 0 0 6) reflections with various incident X-ray slit widths and temperatures ranging from 25 to 800 °C. It was found that the FWHM increased linearly with the slit width of the incident X-ray when substrates exhibited bowing, and the degree of the broadening effect of the FWHM with slit width reflected the extent of substrate bowing. An accurate estimation of the bowing was demonstrated with every measurement up to 800 °C, quantifying not only the extent of bowing but also the change in its direction from convex to concave with increasing ambient temperature. This approach is theoretically applicable for all types of single crystalline substrates with hetero-epitaxial films, and would enable us to provide useful feedback on the optimization of epitaxial growth process conditions.

  16. Polarized infrared attenuated total reflection study of sapphire crystals with different crystallographic planes

    NASA Astrophysics Data System (ADS)

    Lee, S. C.; Ng, S. S.; Hassan, H. Abu; Dumelow, T.

    2015-04-01

    Polarized infrared (IR) attenuated total reflection (ATR) measurements were performed on c- (polar) and r-plane (semi-polar) sapphire crystals. For c-plane sapphire crystal, spectral features due to the surface phonon polariton (SPhP) modes are only observable in the p-polarized ATR spectrum. Calculation of the SPhP dispersion spectra revealed that the SPhP modes of r-plane sapphire crystal are possible to be observed in both the s- and p-polarized ATR spectra. ATR measurements verified that excitation of the SPhP modes are still easier in the p-polarized ATR spectra. Taking into account the effects of anisotropy and the crystal orientation of hexagonal crystal system, the ATR spectra of r-plane sapphire crystal with arbitrary orientations were simulated. Through a best fit of experimental with simulated spectra, information about the crystal orientation of sapphire crystals was deduced.

  17. Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate

    NASA Astrophysics Data System (ADS)

    Jang, Jongjin; Lee, Kwanhyun; Hwang, Junghwan; Jung, Joocheol; Lee, Seunga; Lee, Kyuho; Kong, Bohyun; Cho, Hyunghoun; Nam, Okhyun

    2012-12-01

    Semipolar GaN layers were grown on the m-plane hemispherical patterned sapphire substrates (HPSS) using metal organic chemical vapor deposition in order to reduce the defect density and enhance the extraction efficiency of light. The roughness values of the GaN surface grown on the planar sapphire and the HPSS were 30 and 23 nm root-mean-square roughness for a 20×20-μm2 area, respectively. The reduction of basal stacking fault density was demonstrated by x-ray rocking curve of off-axis planes and cross-sectional transmission electron microscopy. The low-temperature photoluminescence measurement showed that the near band-edge emission from HPSS semipolar GaN was approximately one order of magnitude stronger than that from planar semipolar GaN layer. The InGaN light emitting diode grown on the HPSS showed an output power approximately 1.5 times that on the planar m-sapphire.

  18. Response to Comment on '#28;Twin Symmetry Texture of Energetically Condensed 2 Niobium Thin Films on Sapphire Substrate' #29; [J. Appl. Phys. 110, 033523(2011)

    SciTech Connect

    Xin Zhao, Charles Reece, Phillips Larry, Mahadevan Krishnan, Kang Seo

    2012-07-01

    Welander commented that in our article [J. Appl. Phys. 110, 033523(2011)] , Zhao et al claim to have found a new three-dimensional (3D) relationship for niobium-on-sapphire epitaxy”. Welander might have misunderstood the purpose of our article, which was to show that energetic condensation of Nb on sapphire drives crystal growth that is quite distinct from the type of epitaxy encountered in lower energy deposition. Welander is correct about the misidentified crystal-directions in the top-view sapphire lattice (Fig.4[ref.1]). He is also correct about the misorientation of the pole figures in Fig4[ref.1]. In Fig.1 of this response, we have corrected these errors. Perhaps because of these errors, Welander misconstrued our discussion of the Nb crystal growth as claiming a new 3D registry. That was not our intention. Rather, we wished to highlight the role of energetic condensation that drives low-defect crystal growth by a combination of non-equilibrium sub-plantation that disturbs the substrate lattice and thermal annealing that annihilates defects and promotes large-grain crystal growth.

  19. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  20. Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

    SciTech Connect

    Liu, H. Y.; Avrutin, V.; Izyumskaya, N.; Oezguer, Ue.; Morkoc, H.; Yankovich, A. B.; Kvit, A. V.; Voyles, P. M.

    2012-05-15

    We report on the mechanisms governing electron transport using a comprehensive set of ZnO layers heavily doped with Ga (GZO) grown by plasma-enhanced molecular-beam epitaxy on a-plane sapphire substrates with varying oxygen-to-metal ratios and Ga fluxes. The analyses were conducted by temperature dependent Hall measurements which were supported by microstructural investigations as well. Highly degenerate GZO layers with n > 5 x 10{sup 20} cm{sup -3} grown under metal-rich conditions (reactive oxygen-to-metal ratio <1) show relatively larger grains ({approx}20-25 nm by x-ray diffraction) with low-angle boundaries parallel to the polar c-direction. For highly conductive GZO layers, ionized-impurity scattering with almost no compensation is the dominant mechanism limiting the mobility in the temperature range from 15 to 330 K and the grain-boundary scattering governed by quantum-mechanical tunnelling is negligible. However, due to the polar nature of ZnO having high crystalline quality, polar optical phonon scattering cannot be neglected for temperatures above 150 K, because it further reduces mobility although its effect is still substantially weaker than the ionized impurity scattering even at room temperature (RT). Analysis of transport measurements and sample microstructures by x-ray diffraction and transmission electron microscopy led to a correlation between the grain sizes in these layers and mobility even for samples with a carrier concentration in the upper 10{sup 20} cm{sup -3} range. In contrast, electron transport in GZO layers grown under oxygen-rich conditions (reactive oxygen-to-metal ratio >1), which have inclined grain boundaries and relatively smaller grain sizes of 10-20 nm by x-ray diffraction, is mainly limited by compensation caused by acceptor-type point-defect complexes, presumably (Ga{sub Zn}-V{sub Zn}), and scattering on grain boundaries. The GZO layers with n <10{sup 20} cm{sup -3} grown under metal-rich conditions with reduced Ga fluxes

  1. Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

    PubMed

    Chen, Hao; Zhang, Qi; Chou, Stephen Y

    2015-02-27

    Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing. PMID:25648720

  2. Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials

    NASA Astrophysics Data System (ADS)

    Chen, Hao; Zhang, Qi; Chou, Stephen Y.

    2015-02-01

    Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

  3. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (11 ̅20) sapphire.

    PubMed

    Oleson, Timothy A; Sahai, Nita; Wesolowski, David J; Dura, Joseph A; Majkrzak, Charles F; Giuffre, Anthony J

    2012-03-15

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetic membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacked SPBs retain properties (e.g., fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined the role of oxide surface charge (by varying pH and ionic strength) and of divalent Ca(2+) in controlling surface coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (11 ̅20) face of sapphire (α-Al(2)O(3)). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (I=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I≥210 mM, or with addition of 2mM Ca(2+). The latter two effects are not additive, suggesting that Ca(2+) mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on α-Al(2)O(3) particles determined by adsorption isotherms and on single-crystal (10 ̅10) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques. PMID:22244865

  4. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

    SciTech Connect

    Skuza, J. R. E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K. E-mail: apradhan@nsu.edu

    2015-11-21

    We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

  5. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    NASA Astrophysics Data System (ADS)

    Jiang, Teng; Xu, Shengrui; Zhang, Jincheng; Li, Peixian; Huang, Jun; Ren, Zeyang; Zhu, Jiaduo; Chen, Zhibin; Zhao, Ying; Hao, Yue

    2016-03-01

    The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward < 10 1 ¯ 0 > m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  6. Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

    NASA Technical Reports Server (NTRS)

    Burns, M. J.; De La Houssaye, P. R.; Russell, S. D.; Garcia, G. A.; Clayton, S. R.; Ruby, W. S.; Lee, L. P.

    1993-01-01

    We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

  7. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  8. Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition

    PubMed Central

    2009-01-01

    ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate. PMID:20596413

  9. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  10. Growth and characterization of well-aligned densely-packed rutile TiO(2) nanocrystals on sapphire substrates via metal-organic chemical vapor deposition.

    PubMed

    Chen, C A; Chen, Y M; Korotcov, A; Huang, Y S; Tsai, D S; Tiong, K K

    2008-02-20

    Well-aligned densely-packed rutile TiO(2) nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC(3)H(7))(4)) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ∼33° from the normal to substrates. TEM and SAED measurements showed that the TiO(2) NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO(2) NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO(2) NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed. PMID:21817648

  11. Growth and characterization of well-aligned densely-packed rutile TiO2 nanocrystals on sapphire substrates via metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, C. A.; Chen, Y. M.; Korotcov, A.; Huang, Y. S.; Tsai, D. S.; Tiong, K. K.

    2008-02-01

    Well-aligned densely-packed rutile TiO2 nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC3H7)4) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ~33° from the normal to substrates. TEM and SAED measurements showed that the TiO2 NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO2 NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO2 NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed.

  12. Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

    NASA Astrophysics Data System (ADS)

    Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy

    2014-03-01

    ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800-1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the other hand that silicon acts as a donor in ZnO and not as an amphoteric impurity. In addition, photoluminescence spectra exhibit excitonic recombinations at the same energy for aluminum and silicon, indicating that silicon behaves as an hydrogenic donor in ZnO. Based on these experimental observations, ZnO thin films with a controlled n-type doping in the 1016-1019cm-3 range have been carried out. These results show that MOVPE growth is fully compatible with the achievement of highly Al-doped n-type thin films, but also with the growth of materials with low residual doping, which is a crucial parameter to address ZnO p-type doping issues.

  13. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  14. Homogeneity improvement of N-polar (000\\bar{1}) InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane

    NASA Astrophysics Data System (ADS)

    Shojiki, Kanako; Hanada, Takashi; Tanikawa, Tomoyuki; Imai, Yasuhiko; Kimura, Shigeru; Nonoda, Ryohei; Kuboya, Shigeyuki; Katayama, Ryuji; Matsuoka, Takashi

    2016-05-01

    To improve the homogeneity of the N-polar (000\\bar{1}) (‑c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE), the growth of GaN and MQW on two c-plane sapphire substrates with an off-cut angle of 0.8° toward the a-plane (sub-A) and the m-plane (sub-M) was performed. The effects of the off-cut direction on the structural properties and surface morphologies of ‑c-plane GaN films were elucidated. It was found that the step bunching and meandering of ‑c-plane GaN were significantly suppressed on sub-A. The spatial homogeneity of the ‑c-plane InGaN/GaN MQWs along the off-cut direction was observed in the submicrometer scale using microbeam X-ray diffraction. By inhibiting the step bunching of the GaN template using sub-A, the thickness homogeneity of the MQWs on sub-A has been significantly improved in comparison with that on sub-M.

  15. Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

    NASA Astrophysics Data System (ADS)

    Liu, Hongfei; Chi, Dongzhi

    2015-06-01

    Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2.

  16. Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

    PubMed Central

    Liu, Hongfei; Chi, Dongzhi

    2015-01-01

    Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2. PMID:26119325

  17. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Bo, Liu; Zhihong, Feng; Sen, Zhang; Shaobo, Dun; Jiayun, Yin; Jia, Li; Jingjing, Wang; Xiaowei, Zhang; Yulong, Fang; Shujun, Cai

    2011-12-01

    We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/(V·s) under a sheet density of 2.6 × 1013 cm-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.

  18. Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

    SciTech Connect

    Sahoo, Trilochan; Ju, Jin-Woo; Kannan, V.; Kim, Jin Soo; Yu, Yeon-Tae; Han, Myung-Soo; Park, Young-Sik; Lee, In-Hwan

    2008-03-04

    Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.

  19. Contact photolithography using a carbon-black embedded soft photomask and ultraviolet light emitting diodes with application on patterned sapphire substrates.

    PubMed

    Hsieh, Heng; Wu, Chun-Ying; Lee, Yung-Chun

    2016-04-18

    This paper presents a contact photolithography method for large-area ultraviolet (UV) patterning using a soft polydimethylsiloxane (PDMS) photomask and a planar light source consisting of arrayed light-emitting diodes (LEDs). With simple design and construction, the UV light source can achieve uniformly distributed UV light intensity over an area of 4" in diameter but its divergent angle is 15°. To overcome this large divergent angle, a PDMS soft mold embedded with carbon-black inserts as the UV light blocking materials is applied. It is demonstrated that, when increasing the aspect ratio of the carbon-black inserts, one can achieve excellent UV patterning results. Both experimental data and simulation results are presented. This contact photolithography system has been successfully used for manufacturing patterned sapphire substrates (PSSs) in LED industry. The advantages and potential applications of the proposed method will be addresses. PMID:27137297

  20. Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Kuaile; Chen, Guopeng; Hernandez, Juliana; Tamargo, Maria C.; Shen, Aidong

    2015-09-01

    The authors report the growth of ZnO/ZnMgO multiple quantum well (MQW) structures by plasma-assisted molecular beam epitaxy. A set of three MQW samples with different well thicknesses were grown on c-plane sapphire substrates. Structural and optical properties of the samples were characterized by reflection high-energy electron diffraction, high-resolution x-ray diffraction (XRD) and photoluminescence measurements. Clear superlattice satellite peaks and thickness fringes observed in XRD measurements indicate the formation of periodic structure with good interfacial quality and high crystalline quality. Mid infrared absorptions around 3 μm are observed from Fourier transform infrared spectroscopy measurement. The polarization-dependent absorption proves that the absorptions are originated from intersubband transitions.

  1. A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

    NASA Technical Reports Server (NTRS)

    George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.

    1994-01-01

    The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

  2. Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Oshima, Yuichi; Vίllora, Encarnaciόn G.; Shimamura, Kiyoshi

    2015-01-01

    We demonstrate the high-speed growth of β-Ga2O3 quasi-heteroepilayers on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy (HVPE). (2 bar 0 1) oriented β-Ga2O3 layers were successfully grown using GaCl and O2 as source gases. The growth rate monotonically increased with increasing the partial pressures of the source gases, reaching over 250 μm/h. This rate is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques such as molecular beam epitaxy or metalorganic vapor phase epitaxy. X-ray pole figure measurements indicated the presence of six in-plane rotational domains, in accordance with the substrate symmetry, plus some minor (3 1 0) domains. By the use of off-angled substrates and thick layer overgrowth, one of the in-plane orientations was strongly favored and the (3 1 0) residuals effectively suppressed, so that quasi-heteroepitaxial growth was achieved. Therefore, these results indicate the high-potential of the HVPE technique for the growth of thick and thin β-Ga2O3 layers for the cost-effective production of β-Ga2O3 based devices.

  3. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial Ni-1 (-) Ti-x(1) (-) O-y(3) Thin Films Grown On Sapphire Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Stephens, Sean A.; Manandhar, Sandeep; Shutthanandan, V.; Colby, Robert J.; Hu, Dehong; Shelton, William A.; Chambers, Scott A.

    2015-03-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on sapphire Al2O3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni1-xTi1-yO3 films of different Ni/Ti ratios and thicknesses were deposited on Al2O3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Néel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by film stoichiometry and thickness.

  4. Room temperature ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films grown on r-sapphire

    SciTech Connect

    Punugupati, Sandhyarani Narayan, Jagdish; Hunte, Frank

    2015-05-21

    We report on the epitaxial growth and magnetic properties of Cr{sub 2}O{sub 3} thin films grown on r-sapphire substrate using pulsed laser deposition. The X-ray diffraction (XRD) (2θ and Φ) and TEM characterization confirm that the films are grown epitaxially. The r-plane (011{sup ¯}2) of Cr{sub 2}O{sub 3} grows on r-plane of sapphire. The epitaxial relations can be written as [011{sup ¯}2] Cr{sub 2}O{sub 3} ‖ [011{sup ¯}2] Al{sub 2}O{sub 3} (out-of-plane) and [1{sup ¯}1{sup ¯}20] Cr{sub 2}O{sub 3} ‖ [1{sup ¯}1{sup ¯}20] Al{sub 2}O{sub 3} (in-plane). The as-deposited films showed ferromagnetic behavior up to 400 K but ferromagnetism almost vanishes with oxygen annealing. The Raman spectroscopy data together with strain measurements using high resolution XRD indicate that ferromagnetism in r-Cr{sub 2}O{sub 3} thin films is due to the strain caused by defects, such as oxygen vacancies.

  5. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-11-01

    In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

  6. Properties of zinc oxide films grown on sapphire substrates using high-temperature H{sub 2}O generated by a catalytic reaction on platinum nanoparticles

    SciTech Connect

    Yasui, Kanji Takeuchi, Tomohiko; Nagatomi, Eichi; Satomoto, Souichi; Miura, Hitoshi; Kato, Takahiro; Konya, Takayuki

    2014-03-15

    The authors investigated the characteristics of ZnO films grown on a-plane (11-20) sapphire substrates at 773–873 K using a reaction between dimethylzinc and high-temperature H{sub 2}O generated by a catalytic reaction on Pt nanoparticles. The growth rate was 0.02–0.07 μm min{sup −1}. The largest electron mobility and the smallest residual carrier concentration for the ZnO films were 169 cm{sup 2} V{sup −1} s{sup −1} and 1.6 × 10{sup 17} cm{sup −3}, respectively. X-ray diffraction patterns for the ZnO films exhibited intense (0002) and (0004) peaks associated with ZnO (0001) planes. The minimum full width at half maximum of the ω-rocking curve for ZnO (0002) was less than 0.1°. In a ZnO film with a high electron mobility, no rotational domains were identified using a ZnO (10-10) ϕ scan. From secondary ion mass spectroscopy, a hydrogen concentration of 3 × 10{sup 18} cm{sup −3} and a boron concentration of 2–5 × 10{sup 17} cm{sup −3} were determined. These were identified as extrinsic donor impurities.

  7. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

    SciTech Connect

    Soltani, A. Stolz, A.; Gerbedoen, J.-C.; Rousseau, M.; Bourzgui, N.; De Jaeger, J.-C.; Charrier, J.; Mattalah, M.; Barkad, H. A.; Mortet, V.

    2014-04-28

    Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450–1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films.

  8. Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation

    NASA Astrophysics Data System (ADS)

    Kim, Jaegu; Kim, Jae-Hyun; Cho, Sung-Hak; Whang, Kyung-Hyun

    2016-04-01

    Selective laser lift-off of GaN from a sapphire substrate was demonstrated using 266-nm diode-pumped solid-state laser irradiation. To fabricate a single GaN light-emitting diode (LED) with a size of 100 μm × 100 μm, we used a simple direct scanning technique with a defocused beam and investigated the lift-off parameter in terms of the intensity. Two processing windows corresponding to lower- and higher-intensity regimes were observed experimentally. In the lower-intensity regime, the larger beam size worked better than with the higher regime. Although fluence is generally explained as a processing condition, the total input fluence for a single LED was not crucial to lift-off in case of the scanning technique using a defocused laser beam. However, an intensity of ~37 kW/cm2 was required to initiate the thermal decomposition reaction in GaN at any sample position.

  9. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

    PubMed Central

    2014-01-01

    The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm−2 to 2.6 × 107 cm−2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer. PMID:25258616

  10. Dynamically tunable plasmon induced transparency in a graphene-based nanoribbon waveguide coupled with graphene rectangular resonators structure on sapphire substrate.

    PubMed

    Han, Xu; Wang, Tao; Li, Xiaoming; Xiao, Shuyuan; Zhu, Youjiang

    2015-12-14

    In this paper, we propose dynamically tunable plasmon induced transparency (PIT) in a graphene-based nanoribbon waveguide coupled with graphene rectangular resonators structure on sapphire substrate by shifting the Fermi energy level of the graphene. Two different methods are employed to obtain the PIT effect: one is based on the direct destructive interference between a radiative state and a dark state, the other is based on the indirect coupling through a graphene nanoribbon waveguide. Our numerical results reveal that high tunability in the PIT transparency window can be obtained by altering the Fermi energy levels of the graphene rectangular resonators. Moreover, double PITs are also numerically predicted in this ultracompact structure, comprising series of graphene rectangular resonators. Compared with previously proposed graphene-based PIT effects, our proposed scheme is much easier to design and fabricate. This work not only paves a new way towards the realization of graphene-based integrated nanophotonic devices, but also has important applications in multi-channel-selective filters, sensors, and slow light. PMID:26698986

  11. Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes.

    PubMed

    Shan, Liang; Wei, Tongbo; Sun, Yuanping; Zhang, Yonghui; Zhen, Aigong; Xiong, Zhuo; Wei, Yang; Yuan, Guodong; Wang, Junxi; Li, Jinmin

    2015-07-27

    In this paper, the high performance GaN-based light-emitting diodes (LEDs) on carbon-nanotube-patterned sapphire substrate (CNPSS) by metal-organic chemical vapor deposition (MOCVD) are demonstrated. By studying the mechanism of nucleation, we analyze the reasons of the crystal quality improvement induced by carbon nanotubes (CNTs) in different growth process. Combining with low temperatures photoluminescence (PL) measurements and two-dimensional (2D) finite difference time-domain (FDTD) simulation results, we conclude that the improvement of optical properties and electrical properties of CNPSS mainly originates from the improvement of the internal quantum efficiency (IQE) due to decreased dislocation density during nano-epitaxial growth on CNPSS. Additionally, in order to reduce the light absorption characteristics of CNTs, different time annealing under the oxygen environment is carried out to remove part of CNTs. Under 350 mA current injections, the light output power (LOP) of CNPSS-LED annealed 2 h and 10 h exhibit 11% and 6% enhancement, respectively, compared to that of the CNPSS-LED without annealing. Therefore, high temperature annealing can effectively remove parts of CNTs and further increase the LOP, while overlong annealing time has caused degradation of the quantum well resulting in the attenuation of optical power. PMID:26367696

  12. GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV

    NASA Astrophysics Data System (ADS)

    Terano, Akihisa; Tsuchiya, Tomonobu; Mochizuki, Kazuhiro; Tanaka, Shigehisa; Nakamura, Tohru

    2015-06-01

    We investigated the achievability of low specific on-resistance and high breakdown voltage by GaN diodes consisting of three, five, and eight two-dimensional-electron-gas (2DEG) channels. The anode Schottky electrode and cathode Ohmic electrode were formed on each side wall of the multi-2DEG-channel and the n-type region was formed by Si-ion implantation in the cathode electrode-formation area of each multi-2DEG-channel. With increasing number of 2DEG channels of the diodes, specific on-resistance (RonA) showed a tendency to decrease; RonA of eight-2DEG-channel diodes was as low as 12.1 mΩ cm2. The breakdown voltage of all the fabricated diodes exceeded 3 kV. Although the electrical characteristics of the multi-2DEG-channel diodes fabricated on sapphire substrates were demonstrated, the number of cracks appearing on the epitaxial layer surface was found to increase with increasing number of 2DEG channels. Such crack formation was concluded to govern the practical limit for the number of 2DEG channels.

  13. Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Romanov, I. S.; Prudaev, I. A.; Brudnyi, V. N.; Kop'ev, V. V.; Novikov, Vad. A.; Marmalyuk, A. A.; Kureshov, V. A.; Sabitov, D. R.; Mazalov, A. V.

    2015-03-01

    The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are presented. In these structures, an increase of the internal quantum efficiency is observed. The high-resolution X-ray diffraction spectra and the integrated PL intensity are measured for two temperatures - 10 and 300 K - at different levels of optical YAG-laser pumping.

  14. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    SciTech Connect

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-01-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to growepitaxialNiobium(Nb)thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nbcathode source whose RRR was only 30. The measurements suggest that the film’s density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nbthin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship (“3D-Registry” Claassen’s nomenclature) and the “Volmer-Weber” (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films’ topmost surface (~50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. Finally, a possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  15. Crystal orientation dependence of polarized infrared reflectance response of hexagonal sapphire crystal

    NASA Astrophysics Data System (ADS)

    Lee, S. C.; Ng, S. S.; Abu Hassan, H.; Hassan, Z.; Dumelow, T.

    2014-11-01

    Polarized infrared (IR) reflectance responses of c-, a- and r-plane sapphire crystals were investigated. The sapphire crystals with differently oriented surfaces exhibited different reststrahlen features. Except for c-plane sapphire, the polarized IR reflectance responses were sensitive to the orientation of the samples. The spectral features for a- and r-plane sapphire crystals were modulated by just rotating the samples about their surface normal. To analyze the observations, a theoretical model for the polarized IR reflectivity that considers the effects of crystal orientation of a hexagonal crystal system was employed. Overall, the theoretical predictions were in good agreement with experimental data. The crystal orientation information deduced from the polarized IR reflectance spectra is consistent with that acquired from X-ray diffraction measurements.

  16. Eutectic bonding of sapphire to sapphire

    NASA Technical Reports Server (NTRS)

    Deluca, J. J.

    1973-01-01

    Eutectic mixture of aluminum oxide and zirconium oxide provides new bonding technique for sapphires and rubies. Technique effectively reduces possibility of contamination. Bonding material is aluminum oxide and zirconium oxide mixture that matches coefficient of thermal expansion of sapphire.

  17. Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Ohba, Yasuo; Gotoda, Toru; Kaneko, Kei

    2007-01-01

    Low current laser operation at 405 nm has been demonstrated for the first time for the devices fabricated on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using a high-temperature-grown single-crystal AlN buffer. The thick optical guiding layers were adopted to improve optical confinement. The device structure was the 2-μm-wide ridge-stripe type without facet coating. The minimum threshold current and current density were 60 mA and 3.8 kA/cm 2 for cavity lengths of 500 mm and 1 mm, respectively. These data were comparable to those reported using the special dislocation reduction techniques. The threshold current density linearly decreases with decreasing inverse of cavity length. It was expected that the low threshold current density ranging from 1 to 2 kA/cm 2 could be realized by adapting high reflection coating for laser facets. This expected current density was comparable to values realized for devices grown on the thick freestanding GaN as substrates. These findings support the promising potential of the HT-AlN buffer technique for production of advanced short-wavelength light-emitting devices on sapphire substrates.

  18. Failure Analysis of Sapphire Refractive Secondary Concentrators

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Quinn, George D.

    2009-01-01

    Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

  19. Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure

    NASA Astrophysics Data System (ADS)

    Möldre, Kristel; Aarik, Lauri; Mändar, Hugo; Niilisk, Ahti; Rammula, Raul; Tarre, Aivar; Aarik, Jaan

    2015-10-01

    Atomic layer deposition of TiO2 from TiCl4 and ozone on single crystal α-Al2O3 substrates was investigated and the possibility to control the phase composition by the substrate orientation was demonstrated. Epitaxial growth of rutile and high-pressure TiO2-II on α-Al2O3(0 0 0 1) and rutile on α-Al2O3(0 1 1¯ 2) were obtained at 400-600 °C. On α-Al2O3(0 0 0 1), the epitaxial relationships were determined to be [0 1 0]R // [2 1¯ 1¯ 0]S and [0 0 1]R // [0 1 1¯ 0]S for rutile and sapphire, and [0 0 1]II // [2 1¯ 1¯ 0]S and [0 1¯ 0]II // [0 1 1¯ 0]S for TiO2-II and sapphire. The TiO2-II concentration up to 50% was obtained in the films deposited at 425-500 °C. On α-Al2O3(0 1 1¯ 2), the epitaxial relationship of rutile was [0 1 0]R // [2 1¯ 1¯ 0]S and [0 0 1]R // [0 1 1¯ 0]S. The densities of epitaxial films reached 4.2-4.3 g/cm3 on substrates with both orientations but the epitaxial quality was markedly higher on α-Al2O3(0 0 0 1).

  20. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    NASA Astrophysics Data System (ADS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  1. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect

    Perez-Tomas, A.; Fontsere, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

    2013-05-07

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  2. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  3. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  4. Self-regulated in-plane polarity of [11¯00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrate

    NASA Astrophysics Data System (ADS)

    Lee, Hyemi; Jue, Miyeon; Yoon, Hansub; Lee, Sanghwa; Kim, Chinkyo

    2014-05-01

    In-plane polarity of [11¯00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrate was observed to be self-regulated in such a way that basal faces of coalesced domains were mainly found to have the (0001¯) polarity only. This self-regulation behavior of in-plane polarity was explained by a computational simulation of plan-view surface morphology evolution during coalescence of twins. Based on a computational simulation, asymmetrically suppressed growth rates of twins near a SiO2 pattern were proposed to be responsible for the survival of the slower growing (0001¯) basal faces instead of the faster growing (0001) basal faces during coalescence of twins.

  5. A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11¯03¯]-oriented GaN films grown on m-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jue, Miyeon; Yoon, Hansub; Lee, Hyemi; Lee, Sanghwa; Kim, Chinkyo

    2014-03-01

    We carried out experiments and computational simulations in order to answer a yet unanswered question about a surface flattening mechanism of a [11¯03¯]-oriented GaN film consisting of faceted non-flat top twins. Our results revealed that an overgrowth of one variant of twins over the other, which was manifested only at a thickness larger than a few microns due to a slight asymmetric crystallographic tilt (1.0° ± 0.4°) of twins, played a key role in a surface flattening mechanism. In addition, we experimentally demonstrated that GaN grown on a SiO2-patterned m-plane sapphire substrate had no asymmetric tilt and that no surface flattening occurred.

  6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

    PubMed Central

    Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

    2014-01-01

    Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

  7. Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Jinno, Riena; Uchida, Takayuki; Kaneko, Kentaro; Fujita, Shizuo

    2016-07-01

    Efforts have been made to reduce the density of defects in corundum-structured α-Ga2O3 thin films on sapphire substrates by applying quasi-graded α-(Al x Ga1‑ x )2O3 buffer layers. Transmission electron microscopy images revealed that most strains were located in the α-(Al x Ga1‑ x )2O3 buffer layers, and that the total density of dislocations in the α-Ga2O3 thin films was successfully decreased by more than one order of magnitude compared with that without buffer layers, that is, the screw and edge dislocation densities were about 3 × 108 and 6 × 108 cm‑2, respectively.

  8. High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector

    NASA Astrophysics Data System (ADS)

    Guo, Hao; Chen, Hongjun; Zhang, Xiong; Zhang, Peiyuan; Liu, Jianjun; Liu, Honggang; Cui, Yiping

    2013-06-01

    GaN-based light-emitting diodes (LED) on a patterned sapphire substrate with a novel hybrid atomic layer deposition (ALD)-TiO2Al2O3 distributed Bragg reflector (DBR) and Ag mirror have been proposed and fabricated. Due to the excellent thickness uniformity of ALD for the proposed reflector, high reflectivity over 99.3% at an incident angle of 5 deg has been achieved. It was also found that the reflectivity of a backside reflector with an Ag mirror slightly depends on incident light wavelength and incident angle. Moreover, because of the good adhesion between TiO2/Al2O3 DBR and the Ag mirror, the fabrication process was simplified and reliable. With a 60 mA current injection, an enhancement of 5.2%, 8.9%, and 47.1% in light output power (LOP) at the 460 nm wavelength was realized for the proposed LED with Ag mirror and 3-pair ALD-TiO2Al2O3 DBR as compared with a LED with a traditional Ag mirror and 3-pair TiO2/SiO2 DBR, with Al mirror and 3-pair ALD-TiO2Al2O3 DBR, and without backside reflector, respectively. This result shows that the ALD-TiO/O3 DBR can be used to enhance the LOP greatly and improve adhesion between the sapphire substrate and the metallic mirror, and thus is very promising for fabricating high performance GaN-based LEDs.

  9. DOE SAPPHIRE PROJECT

    SciTech Connect

    Dr. Gary R. Pickrell

    2000-03-01

    Since this is the first report for this project an extensive background section follows on the theory of operation of the single crystal sapphire sensor technology which will be developed and field tested at the Wabash River Coal Gasification Facility. Requirements for the temperature sensors for implementation in the coal gasifiers has been established in conjunction with the industrial partner, Dynegy. Coal slag immersion tests indicate good corrosion resistance of the single crystal sapphire. However, a more sophisticated corrosion apparatus has been constructed in order to test the optical attenuation of a single crystal sapphire fiber immersed in the coal slag at high temperature. These results will be reported in the next period. The data to date for sapphire sensor development is promising. More extensive data on the sapphire fiber sensor development will be reported for the next period.

  10. Relationship between asperity-mediated surface forces and topography alteration of silica microspheres sliding on mica, sapphire, and glass substrates under ambient conditions: atomic force microscopy and theoretical studies.

    PubMed

    Zhang, Dan; Chen, Xin-qiang; Wang, You; Zhang, Fei-hu; Gan, Yang

    2014-04-01

    Contact geometry significantly influences adhesive force measurements and modeling for adhesion/friction studies where an AFM colloidal probe technique has been extensively employed. Here we present a systematic study on the topography alteration of silica microspheres sliding on mica, sapphire, and glass substrates under ambient conditions at a relative humidity of 30-55% and the consequential adhesion behaviors of worn microspheres through AFM direct force measurements and theoretical modeling. The wearing of microspheres creates a truncated platform, which is largest for sliding on glass substrates. On the platform are nanoasperities consisting of wear debris and airborne particulate contaminants. Variations in adhesive forces with sliding time and testing modes as well as the effect of surface roughness of substrates are explained within the theoretical framework of nanoasperity-mediated capillary and van der Waals forces. The drawbacks of the present reverse-imaging method for microsphere topography examination, and numerous sources of errors associated with the extraction of key parameters for force modeling, are discussed in detail. The results will also have important implications for more reliable AFM colloidal probe technique and its application in adhesion and tribological studies. PMID:24646417

  11. Sapphire mirror for the KAGRA gravitational wave detector

    NASA Astrophysics Data System (ADS)

    Hirose, Eiichi; Bajuk, Dan; Billingsley, GariLynn; Kajita, Takaaki; Kestner, Bob; Mio, Norikatsu; Ohashi, Masatake; Reichman, Bill; Yamamoto, Hiroaki; Zhang, Liyuan

    2014-03-01

    KAGRA, the Japanese interferometric gravitational wave detector currently under construction, will employ sapphire test masses for its cryogenic operation. Sapphire has an advantage in its higher thermal conductivity near the operating temperature 20 K compared to fused silica used in other gravitational wave detectors, but there are some uncertain properties for the application such as hardness, optical absorption, and birefringence. We introduce an optical design of the test masses and our recent R&D results to address the above properties. Test polish of sapphire substrate has especially proven that specifications on the surface are sufficiently met. Recent measurements of absorption and inhomogeneity of the refractive index of the sapphire substrate indicate that the other properties are also acceptable to use sapphire crystal as test masses.

  12. High performance sapphire windows

    NASA Technical Reports Server (NTRS)

    Bates, Stephen C.; Liou, Larry

    1993-01-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  13. Atomic-scale investigation of structural defects in GaN layer on c-plane sapphire substrate during initial growth stage

    NASA Astrophysics Data System (ADS)

    Matsubara, Tohoru; Sugimoto, Kohei; Okada, Narihito; Tadatomo, Kazuyuki

    2016-04-01

    Structural defects in the initial growth stages of GaN on sapphire, including stacking faults (SFs), threading dislocations (TDs), and mosaic structure containing grain boundaries, are investigated at the atomic scale. Individual grains in the as-deposited low temperature-GaN buffer layer are found to have twists correlated with those of the adjacent grains. These grains have little similarity on the stacking sequences, and the atomic arrangement on each side of the grain boundaries may be rearranged by annealing to achieve higher similarity in the stacking sequence. The TD identified as a-type at the top of the SFs-rich interfacial region is thought to originate from Frank partial dislocations. The Frank partial dislocation produces a distorted wurtzite-type structure. At the intermediate region of the basal-plane stacking fault between Frank and Shockley partial dislocations, the TD relieves the distortion in the wurtzite-type structure. In the TD, the wurtzite structure slips relative to the surrounding wurtzite.

  14. Aligned epitaxial SnO2 nanowires on sapphire: growth and device applications.

    PubMed

    Wang, Xiaoli; Aroonyadet, Noppadol; Zhang, Yuzheng; Mecklenburg, Matthew; Fang, Xin; Chen, Haitian; Goo, Edward; Zhou, Chongwu

    2014-06-11

    Semiconducting SnO2 nanowires have been used to demonstrate high-quality field-effect transistors, optically transparent devices, photodetectors, and gas sensors. However, controllable assembly of rutile SnO2 nanowires is necessary for scalable and practical device applications. Here, we demonstrate aligned, planar SnO2 nanowires grown on A-plane, M-plane, and R-plane sapphire substrates. These parallel nanowires can reach 100 μm in length with sufficient density to be patterned photolithographically for field-effect transistors and sensor devices. As proof-of-concept, we show that transistors made this way can achieve on/off current ratios on the order of 10(6), mobilities around 71.68 cm(2)/V·s, and sufficiently high currents to drive external organic light-emitting diode displays. Furthermore, the aligned SnO2 nanowire devices are shown to be photosensitive to UV light with the capability to distinguish between 254 and 365 nm wavelengths. Their alignment is advantageous for polarized UV light detection; we have measured a polarization ratio of photoconductance (σ) of 0.3. Lastly, we show that the nanowires can detect NO2 at a concentration of 0.2 ppb, making them a scalable, ultrasensitive gas sensing technology. Aligned SnO2 nanowires offer a straightforward method to fabricate scalable SnO2 nanodevices for a variety of future electronic applications. PMID:24837617

  15. Sapphire tube pressure vessel

    SciTech Connect

    Outwater, J.O.

    2000-05-23

    A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

  16. Sapphire tube pressure vessel

    DOEpatents

    Outwater, John O.

    2000-01-01

    A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

  17. Preparation of epitaxial AlN films by electron cyclotron resonance plasma-assisted chemical vapor deposition on Ir- and Pt-coated sapphire substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Vargas, Roberto; Goto, Takashi; Someno, Yoshihiro; Hirai, Toshio

    1994-03-01

    AlN epitaxial films have been fabricated on Ir- and Pt-coated α-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700 °C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/α-Al2O3 structure in surface acoustic wave (SAW) devices.

  18. Orientation of FePt nanoparticles on top of a-SiO2/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size.

    PubMed

    Schilling, Martin; Ziemann, Paul; Zhang, Zaoli; Biskupek, Johannes; Kaiser, Ute; Wiedwald, Ulf

    2016-01-01

    Texture formation and epitaxy of thin metal films and oriented growth of nanoparticles (NPs) on single crystal supports are of general interest for improved physical and chemical properties especially of anisotropic materials. In the case of FePt, the main focus lies on its highly anisotropic magnetic behavior and its catalytic activity, both due to the chemically ordered face-centered tetragonal (fct) L10 phase. If the c-axis of the tetragonal system can be aligned normal to the substrate plane, perpendicular magnetic recording could be achieved. Here, we study the orientation of FePt NPs and films on a-SiO2/Si(001), i.e., Si(001) with an amorphous (a-) native oxide layer on top, on MgO(001), and on sapphire(0001) substrates. For the NPs of an approximately equiatomic composition, two different sizes were chosen: "small" NPs with diameters in the range of 2-3 nm and "large" ones in the range of 5-8 nm. The 3 nm thick FePt films, deposited by pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission electron microscopy (HRTEM) after different annealing steps between 200 and 650 °C. The L10 phase is obtained at annealing temperatures above 550 °C for films and 600 °C for nanoparticles in accordance with previous reports. On the amorphous surface of a-SiO2/Si substrates we find no preferential orientation neither for FePt films nor nanoparticles even after annealing at 630 °C. On sapphire(0001) supports, however, FePt nanoparticles exhibit a clearly preferred (111) orientation even in the as-prepared state, which can be slightly improved by annealing at 600-650 °C. This improvement depends on the size of NPs: Only the smaller NPs approach a fully developed (111) orientation. On top of MgO(001) the effect of annealing on

  19. Reduced cost and improved figure of sapphire optical components

    NASA Astrophysics Data System (ADS)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  20. Positional dependence of defect distribution in semipolar (20\\bar{2}1) hydride vapor phase epitaxy-GaN films grown on (22\\bar{4}3) patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Uchiyama, Toshiro; Takeuchi, Shotaro; Kamada, Shohei; Arauchi, Takuji; Hashimoto, Yasuhiro; Yamane, Keisuke; Okada, Narihito; Imai, Yasuhiko; Kimura, Shigeru; Tadatomo, Kazuyuki; Sakai, Akira

    2016-05-01

    We have investigated the position dependence of crystalline quality and defect distribution in a semipolar (20\\bar{2}1) hydride vapor phase epitaxy (HVPE)-GaN film grown on a (22\\bar{4}3) patterned sapphire substrate (PSS). Position-dependent X-ray microdiffraction (XRMD) measurement clearly revealed the periodic fluctuation of the 20\\bar{2}1 lattice plane tilting in HVPE-GaN films. This correlated with the periodic distribution of (a + c)-type dislocations owing to the patterning pitch of the PSS as confirmed by transmission electron microscopy (TEM). In the three-dimensional reciprocal lattice space map, the diffuse streak exactly along the c-axis can be clearly detected, indicating the presence of basal plane stacking faults in HVPE-GaN films. Furthermore, we have quantitatively estimated the defect densities from the results of XRMD and TEM measurements. From the obtained results of XRMD and TEM measurements, the fluctuation of the lattice plane tilting and the defect distribution in (20\\bar{2}1) HVPE-GaN films grown on two types of metalorganic vapor phase epitaxy-GaN templates will be discussed in detail.

  1. Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

    SciTech Connect

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2015-03-28

    We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

  2. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

    PubMed

    Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

    2013-09-01

    GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively. PMID:24104020

  3. Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2015-03-01

    We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

  4. Damage testing of sapphire and Ti: sapphire laser materials

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Diffusion bonded sapphire and Ti (Titanium). Sapphire laser materials that will be damage tested to determine if there is an increase in damage threshold. Photographed in building 1145, photographic studio.

  5. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam; Kim, Young-Min

    2015-07-15

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitution of Si for Al.

  6. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    NASA Astrophysics Data System (ADS)

    Lee, Sung Bo; Kim, Young-Min; Han, Heung Nam

    2015-07-01

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3) with the substitution of Si for Al.

  7. Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

    NASA Technical Reports Server (NTRS)

    Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

    2003-01-01

    This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

  8. Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

    NASA Technical Reports Server (NTRS)

    Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

    2004-01-01

    This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

  9. Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.

    PubMed

    Kuchuk, Andrian V; Lytvyn, Petro M; Li, Chen; Stanchu, Hryhorii V; Mazur, Yuriy I; Ware, Morgan E; Benamara, Mourad; Ratajczak, Renata; Dorogan, Vitaliy; Kladko, Vasyl P; Belyaev, Alexander E; Salamo, Gregory G

    2015-10-21

    We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These polarization-doped p-n junction structures were characterized at the nanoscale by a combination of averaging as well as depth-resolved experimental techniques including: cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, Rutherford backscattering spectrometry, and scanning probe microscopy. We observed that a small miscut in the substrate orientation along with the accumulated strain during growth led to a change in the mosaic structure of the AlxGa1-xN film, resulting in the formation of macrosteps on the surface. Moreover, we found a lateral modulation of charge carriers on the surface which were directly correlated with these steps. Finally, using nanoscale probes of the charge density in cross sections of the samples, we have directly measured, semiquantitatively, both n- and p-type polarization doping resulting from the gradient concentration of the AlxGa1-xN layers. PMID:26431166

  10. Design of a back-illuminated, crystallographically etched, silicon-on-sapphire avalanche photodiode with monolithically integrated microlens, for dual-mode passive & active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.; Cole, Daniel C.

    2008-12-01

    There is a growing need in space and environmental research applications for dual-mode, passive and active 2D and 3D ladar imaging methods. To fill this need, an advanced back-illuminated avalanche photodiode (APD) design is presented based on crystallographically etched (100) epitaxial silicon on R-plane sapphire (SOS), enabling single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with KOH:IPA:H2O solution through a thermally grown oxide mask, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, Φc = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. Detectors are back-illuminated through light focusing microlenses fabricated in the thinned, AR-coated sapphire substrate. The APDs share a common, front-side anode contact, made locally at the base of each device mesa. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical cross-talk. SOS-APD arrays are indium bump-bonded to CMOS readout ICs to produce hybrid FPAs. The quantum efficiency for the square 27 µm pixels exceeds 50% for 250 nm < λ < 400 nm and exceeds 80% for 400 nm < λ < 700 nm. The sapphire microlenses compensate detector quantum efficiency loss resulting from the mesa geometry and yield 100% sensitive-area-fill-factor arrays, limited in size only by the wafer diameter.

  11. Liquid-crystal tunable filter based on sapphire microspheres.

    PubMed

    Gilardi, Giovanni; Donisi, Domenico; Serpengüzel, Ali; Beccherelli, Romeo

    2009-11-01

    We design an integrated optoelectronic device based on the whispering-gallery modes of a sapphire microsphere integrated with a liquid-crystal tuning medium to produce a narrowband, electrically tunable, channel-dropping filter. The sapphire microsphere is glued over a diffused waveguide in a glass substrate. At the base of the microsphere, a small volume of liquid crystal is infiltrated. We numerically evaluate the performance of the device and demonstrate a voltage tuning of the narrowband resonances. PMID:19881558

  12. Orientation of FePt nanoparticles on top of a-SiO2/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

    PubMed Central

    Schilling, Martin; Ziemann, Paul; Zhang, Zaoli; Biskupek, Johannes; Kaiser, Ute

    2016-01-01

    Summary Texture formation and epitaxy of thin metal films and oriented growth of nanoparticles (NPs) on single crystal supports are of general interest for improved physical and chemical properties especially of anisotropic materials. In the case of FePt, the main focus lies on its highly anisotropic magnetic behavior and its catalytic activity, both due to the chemically ordered face-centered tetragonal (fct) L10 phase. If the c-axis of the tetragonal system can be aligned normal to the substrate plane, perpendicular magnetic recording could be achieved. Here, we study the orientation of FePt NPs and films on a-SiO2/Si(001), i.e., Si(001) with an amorphous (a-) native oxide layer on top, on MgO(001), and on sapphire(0001) substrates. For the NPs of an approximately equiatomic composition, two different sizes were chosen: “small” NPs with diameters in the range of 2–3 nm and “large” ones in the range of 5–8 nm. The 3 nm thick FePt films, deposited by pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission electron microscopy (HRTEM) after different annealing steps between 200 and 650 °C. The L10 phase is obtained at annealing temperatures above 550 °C for films and 600 °C for nanoparticles in accordance with previous reports. On the amorphous surface of a-SiO2/Si substrates we find no preferential orientation neither for FePt films nor nanoparticles even after annealing at 630 °C. On sapphire(0001) supports, however, FePt nanoparticles exhibit a clearly preferred (111) orientation even in the as-prepared state, which can be slightly improved by annealing at 600–650 °C. This improvement depends on the size of NPs: Only the smaller NPs approach a fully developed (111) orientation. On top of MgO(001) the

  13. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  14. Ion Milling of Sapphire

    NASA Technical Reports Server (NTRS)

    Gregory, Don A.

    2002-01-01

    The ion figuring system at the Marshall Space Flight Center has been successfully used for at least three previous investigations into the ion milling of metals. The research was directed toward improving the surface quality of X-ray directing optics. These studies were performed on surfaces that were already hand polished to an excellent surface quality and were intended to remove the residual unwanted figure left by those techniques. The ion milling was typically carried out on test surfaces or mandrels that were several centimeters in width and length. The good thermal conductivity of the metal samples allowed the ion beam to be directed onto the sample for an indefinite period of time. This is not true of sapphire or most electrical insulators and problems have arisen in recent attempts to ion mill thin samples of sapphire. The failure and fracture of the material was likely due to thermal stresses and the relatively low thermal conductivity of sapphire (compared to most metals), These assumed stresses actually provided the key as to how they might be monitored. A thermal gradient in the sapphire sample will induce an effective index of refraction change and because of the shape constraint and the crystal structure and simple thermal expansion, this index change will be nonuniform across the sample. In all but simple cubic crystal structures, this leads to a spatially nonuniform optical retardance induced on any polarized optical beam traversing the sample, and it is this retardance that can be monitored using standard polarimetric procedures.

  15. An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN

    NASA Astrophysics Data System (ADS)

    Moon, Daeyoung; Jang, Jeonghwan; Choi, Daehan; Shin, In-Su; Lee, Donghyun; Bae, Dukkyu; Park, Yongjo; Yoon, Euijoon

    2016-05-01

    An ultra-thin (26 nm) sapphire (Al2O3) membrane was used as a compliant substrate for the growth of high quality GaN. The density of misfit dislocations per unit length at the interface between the GaN layer and the sapphire membrane was reduced by 28% compared to GaN on the conventional sapphire substrate. Threading dislocation density in GaN on the sapphire membrane was measured to be 2.4×108/cm2, which is lower than that for GaN on the conventional sapphire substrate (3.2×108/cm2). XRD and micro-Raman results verifed that the residual stress in GaN on the sapphire membrane was as low as 0.02 GPa due to stress absorption by the ultra-thin compliant sapphire membrane.

  16. (abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

    1994-01-01

    The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

  17. Design of a silicon avalanche photodiode pixel with integrated laser diode using back-illuminated crystallographically etched silicon-on-sapphire with monolithically integrated microlens for dual-mode passive and active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.

    2010-08-01

    There is a growing need in scientific research applications for dual-mode, passive and active 2D and 3D LADAR imaging methods. To fill this need, an advanced back-illuminated silicon avalanche photodiode (APD) design is presented using a novel silicon-on-sapphire substrate incorporating a crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. This allows integration of a high quantum efficiency silicon APD with a gallium nitride (GaN) laser diode in each pixel. The pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with TMAH solution, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, φ c = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. The GaN laser diode is fabricated by epitaxial growth inside of an inverted, etched cavity in the silicon mesa. Microlenses are fabricated in the thinned, and AR-coated sapphire substrate. The APDs share a common, front-side anode contact, and laser diodes share a common cathode. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical crosstalk. SOS-APD arrays are flip-chip bump-bonded to CMOS readout ICs to produce hybrid FPAs. The square 27 μm emitter-detector pixel achieves SNR > 1 in active detection mode for Lambert surfaces at 1,000 meters.

  18. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jiang, Teng; Xu, Sheng-Rui; Zhang, Jin-Cheng; Xie, Yong; Hao, Yue

    2016-01-01

    Uncoalesced a-plane GaN epitaxial lateral overgrowth (ELO) structures have been synthesized along two mask stripe orientations on a-plane GaN template by MOCVD. The morphology of two ELO GaN structures is performed by Scanning electronic microscopy. The anisotropy of crystalline quality and stress are investigated by micro-Raman spectroscopy. According to the Raman mapping spectra, the variations on the intensity, peak shift and the full width at half maximum (FWHM) of GaN E2 (high) peak indicate that the crystalline quality improvement occurs in the window region of the GaN stripes along [0001], which is caused by the dislocations bending towards the sidewalls. Conversely, the wing regions have better quality with less stress as the dislocations propagated upwards when the GaN stripes are along []. Spatial cathodoluminescence mapping results further support the explanation for the different dislocation growth mechanisms in the ELO processes with two different mask stripe orientations.

  19. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

    PubMed Central

    Jiang, Teng; Xu, Sheng-rui; Zhang, Jin-cheng; Xie, Yong; Hao, Yue

    2016-01-01

    Uncoalesced a-plane GaN epitaxial lateral overgrowth (ELO) structures have been synthesized along two mask stripe orientations on a-plane GaN template by MOCVD. The morphology of two ELO GaN structures is performed by Scanning electronic microscopy. The anisotropy of crystalline quality and stress are investigated by micro-Raman spectroscopy. According to the Raman mapping spectra, the variations on the intensity, peak shift and the full width at half maximum (FWHM) of GaN E2 (high) peak indicate that the crystalline quality improvement occurs in the window region of the GaN stripes along [0001], which is caused by the dislocations bending towards the sidewalls. Conversely, the wing regions have better quality with less stress as the dislocations propagated upwards when the GaN stripes are along []. Spatial cathodoluminescence mapping results further support the explanation for the different dislocation growth mechanisms in the ELO processes with two different mask stripe orientations. PMID:26821824

  20. Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Sun, Qian; Kong, Bo Hyun; Yerino, Christopher D.; Ko, Tsung-Shine; Leung, Benjamin; Cho, Hyung Koun; Han, Jung

    2009-12-01

    In this paper, we report a detailed study on the evolution of surface morphology and microstructure of nonpolar a-plane GaN (a-GaN) through controlled growth interruptions. Microscopy imaging shows that the two-step a-GaN growth went through a roughening-recovery process. The first-step growth (under high V/III and high pressure) produced a rough surface with tall mesas separated by voids. The second-step growth (under low V/III and low pressure) promoted the lateral growth and filled up the voids. Striations that formed during the island coalescence persisted throughout the second-step growth, but could be relieved by an additional third-step growth. The morphological evolution was explained according to the kinetic Wulff plots. The microstructure of the a-GaN films was investigated by transmission electron microscopy (TEM) and x-ray rocking curve analysis. Most of the extended defects observed in the plan-view TEM images were I1 type basal-plane stacking faults (BSFs) and their associated partial dislocations (PDs). It is found that the bending of PDs (at the inclined/vertical growth fronts) within the basal plane toward the m-axes was responsible for the substantial reduction in threading PDs and the increase in BSF dimension. Based on a careful correlation between the morphological evolution and the microstructure development, we proposed a model explaining the possible mechanisms for the great reduction in defect density during the two-step growth process.

  1. Ion Milling of Sapphire

    NASA Technical Reports Server (NTRS)

    Gregory, Don A.; Herren, Kenneth A.

    2004-01-01

    The ion milling of sapphire is a complicated operation due to several characteristics of the material itself. It is a relatively hard transparent nonconductive crystalline material that does not transfer heat nearly as well as metals that have been successfully ion milled in the past. This investigation involved designing an experimental arrangement, using existing ion milling equipment, as the precursor to figuring the surface of sapphire and other insulating optical materials. The experimental arrangement employs a laser probe beam to constantly monitor the stresses being induced in the material, as it is being ion milled. The goal is to determine if the technique proposed would indeed indicate the stress being induced in the material so that these stresses can be managed to prevent failure of the optic.

  2. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    SciTech Connect

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E. Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V.; Babaev, V. A.; Ismailov, A. M.; Vovk, E. A.; Nizhankovsky, S. V.

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  3. Slow Crack Growth and Fracture Toughness of Sapphire for the International Space Station Fluids and Combustion Facility

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.

    2006-01-01

    The fracture toughness, inert flexural strength, and slow crack growth parameters of the r- and a-planes of sapphire grown by the Heat Exchange Method were measured to qualify sapphire for structural use in the International Space Station. The fracture toughness in dry nitrogen, K(sub Ipb), was 2.31 +/- 0.12 MPa(square root of)m and 2.47 +/- 0.15 MPa(squre root of)m for the a- and r-planes, respectively. Fracture toughness measured in water via the operational procedure in ASTM C1421 was significantly lower, K(sub Ivb) = 1.95+/- 0.03 MPa(square root of)m, 1.94 +/- 0.07 and 1.77 +/- 0.13 MPa(square root of)m for the a- , m- and r-planes, respectively. The mean inert flexural strength in dry nitrogen was 1085 +/- 127 MPa for the r-plane and 1255 +/- 547 MPa for the a-plane. The power law slow crack growth exponent for testing in water was n = 21 +/- 4 for the r-plane and n (greater than or equal to) 31 for the a-plane. The power law slow crack growth coefficient was A = 2.81 x 10(exp -14) m/s x (MPa(squre root of)m)/n for the r-plane and A (approx. equals)2.06 x 10(exp -15) m/s x (MPa(square root of)m)/n for the a-plane. The r- and a-planes of sapphire are relatively susceptible to stress corrosion induced slow crack growth in water. However, failure occurs by competing modes of slow crack growth at long failure times and twinning for short failure time and inert environments. Slow crack growth testing needs to be performed at low failure stress levels and long failure times so that twinning does not affect the results. Some difficulty was encountered in measuring the slow crack growth parameters for the a-plane due to a short finish (i.e., insufficient material removal for elimination of the damage generated in the early grinding stages). A consistent preparation method that increases the Weibull modulus of sapphire test specimens and components is needed. This would impart higher component reliability, even if higher Weibull modulus is gained at the sacrifice of

  4. Temperature behaviour of strain and defects in sapphire implanted with Si+ ions

    NASA Astrophysics Data System (ADS)

    Flynn, C.; Atanackovic, P.; Enjeti, L.

    2012-08-01

    Strain and defects produced by implantation of Si+ ions into r-plane sapphire are studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Post-implantation annealing carried out at temperatures up to 1100 °C is observed to reduce strain and the number of defects. The peak value of strain falls linearly with increasing annealing temperature. Peaks in the strain depth profiles correspond to the regions of highest defect density. Roughness and amorphous content at the surface can be reduced by high temperature annealing.

  5. Strengthening sapphire at elevated temperatures by SiO 2 films

    NASA Astrophysics Data System (ADS)

    Feng, Li-Ping; Liu, Zheng-Tang; Li, Qiang

    2007-04-01

    SiO 2 films have been prepared on sapphire by radio frequency magnetron reactive sputtering in order to increase the optical and mechanical properties of infrared windows and domes of sapphire at elevated temperatures. Infrared transmission and flexural strength of uncoated and coated sapphires have been investigated at different temperatures. SiO 2 films were shown to have apparent antireflective effect on sapphire substrate at room temperature. With increasing temperature, the coated sapphires have larger average transmission than the uncoated ones. The temperature was proven to only weakly affect the absorption coefficient and antireflection capability of the deposited films. It is also indicated that the flexural strengths of the c-axis sapphire samples coated with SiO 2 films are increased by 1.2 and 1.5 times than those of uncoated at 600 and 800 °C, respectively.

  6. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    NASA Astrophysics Data System (ADS)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  7. Sapphire shaped crystals for medicine

    NASA Astrophysics Data System (ADS)

    Shikunova, A.; Kurlov, V. N.

    2016-01-01

    The favorable combination of excellent optical and mechanical properties of sapphire makes it an attractive structural material for medicine. We have developed a new kind of medical instruments and devices for laser photodynamic and thermal therapy, laser surgery, fluorescent diagnostics, and cryosurgery based on sapphire crystals of various shapes with capillary channels in their volume.

  8. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  9. Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

    NASA Astrophysics Data System (ADS)

    Yakovlev, V. A.; Novikova, N. N.; Vinogradov, E. A.; Ng, S. S.; Hassan, Z.; Hassan, H. A.

    2010-02-01

    Two thin aluminum nitride films have been prepared on sapphire substrates by molecular beam epitaxy technique. Then alkaline and acidic washing were used to remove the back-metal-coating of the sapphire substrate for one of the samples. (It caused also partial film dissolution). The surface polariton (SP) spectra have been measured by attenuated total reflection (ATR) technique. The measured SP dispersion is compared with one calculated using the literature film parameters. Due to the resonance interaction of sapphire substrate SP with the film transverse optical (TO) phonon the splitting of the dispersion curve of sapphire SP was found. The resonance takes place only for the frequency of the film TO phonon polarized along the surface of the anisotropic AlN film (perpendicular to the optical axis). The analysis of ATR and external reflectivity spectra shows the presence of some transition layer between the substrate and the film.

  10. The growth of an epitaxial Mg Al spinel layer on sapphire by solid-state reactions

    NASA Astrophysics Data System (ADS)

    Liu, Che-Ming; Chen, Jyh-Chen; Chen, Chun-Jen

    2005-11-01

    In this work an epitaxial Mg-Al spinel layer was successfully grown on a sapphire single crystal surface by solid-state reactions. An Mg film (15 μm) was sputtered onto the sapphire crystal using RF magnetron sputtering. An epitaxial Mg-Al spinel layer was formed on the sapphire surface; an MgO layer was formed on top of the spinel layer by solid-state reactions that occurred around 1300-1600 °C, in an air atmosphere. When the reaction time was lengthened to over 30 h at 1600 °C, these layers were almost completely transformed into an epitaxial Mg-Al spinel layer. The thickness of the epitaxial layer could be controlled by the length of the reaction time and the temperature. The results of X-ray diffraction analysis indicate that the orientation of the MgO and the spinel growth was dependent on the plane of the sapphire, that is (0 0 0 1) sapphire||(1 1 1) spinel||(1 1 1) MgO and (1 1 2¯ 0) sapphire||(1 1 1) spinel||(1 1 1) MgO. It was confirmed that the in-plane orientation of the spinel with respect to the C- and A-sapphire surface was [1 1¯ 0 0] sapphire||[1¯ 1 0] spinel, [1 1 2¯ 0] sapphire||[1¯ 1¯ 2] spinel and [1 0 1¯ 0] sapphire||[1¯ 1 0] spinel, [0 0 0 1] sapphire||[1¯ 1¯ 2] spinel, and there would be (1¯ 1 0)-oriented spinel growth on the M-plane sapphire substrate.

  11. Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

    NASA Astrophysics Data System (ADS)

    Tabares, G.; Hierro, A.; Lopez-Ponce, M.; Muñoz, E.; Vinter, B.; Chauveau, J.-M.

    2015-02-01

    Homoepitaxial ZnO/(Zn,Mg)O multiple quantum wells (MQWs) grown with m- and r-plane orientations are used to demonstrate Schottky photodiodes sensitive to the polarization state of light. In both orientations, the spectral photoresponse of the MQW photodiodes shows a sharp excitonic absorption edge at 3.48 eV with a very low Urbach tail, allowing the observation of the absorption from the A, B and C excitonic transitions. The absorption edge energy is shifted by ˜30 and ˜15 meV for the m- and r-plane MQW photodiodes, respectively, in full agreement with the calculated polarization of the A, B, and C excitonic transitions. The best figures of merit are obtained for the m-plane photodiodes, which present a quantum efficiency of ˜11%, and a specific detectivity D* of ˜6.4 × 1010 cm Hz1/2/W. In these photodiodes, the absorption polarization sensitivity contrast between the two orthogonal in-plane axes yields a maximum value of (R⊥/R||)max ˜ 9.9 with a narrow bandwidth of ˜33 meV.

  12. Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

    SciTech Connect

    Tabares, G.; Hierro, A. Lopez-Ponce, M.; Muñoz, E.

    2015-02-09

    Homoepitaxial ZnO/(Zn,Mg)O multiple quantum wells (MQWs) grown with m- and r-plane orientations are used to demonstrate Schottky photodiodes sensitive to the polarization state of light. In both orientations, the spectral photoresponse of the MQW photodiodes shows a sharp excitonic absorption edge at 3.48 eV with a very low Urbach tail, allowing the observation of the absorption from the A, B and C excitonic transitions. The absorption edge energy is shifted by ∼30 and ∼15 meV for the m- and r-plane MQW photodiodes, respectively, in full agreement with the calculated polarization of the A, B, and C excitonic transitions. The best figures of merit are obtained for the m-plane photodiodes, which present a quantum efficiency of ∼11%, and a specific detectivity D* of ∼6.4 × 10{sup 10} cm Hz{sup 1/2}/W. In these photodiodes, the absorption polarization sensitivity contrast between the two orthogonal in-plane axes yields a maximum value of (R{sub ⊥}/R{sub ||}){sub max} ∼ 9.9 with a narrow bandwidth of ∼33 meV.

  13. Miniature Sapphire Acoustic Resonator - MSAR

    NASA Technical Reports Server (NTRS)

    Wang, Rabi T.; Tjoelker, Robert L.

    2011-01-01

    A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to

  14. Evolution of the sapphire industry: Rubicon Technology and Gavish

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  15. LASE Ti: Sapphire Laser

    NASA Technical Reports Server (NTRS)

    1995-01-01

    In the photo, Mr. Leroy F. Matthews (Lockheed Engineering & Sciences Co.) is connecting the Thermal Control Unit cables in preparing the Lidar Atmospheric Sensing Experiment (LASE) Instrument for integration into a NASA/ER-2 aircraft for a field mission. LASE is the first fully-engineered, autonomous differential Absorption Lidar (DIAL) System for the measurement of water vapor, aerosol and cloud in the troposphere. LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150 mJ/pulse. The laser beam is seeded to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere with accuracy having less than 6% of error. No other instrument can provide the spatial coverage and accuracy of LASE. Water vapor is the most radiative active gas in the troposphere, and the lack of understanding about its distribution provides one of the largest uncertainties in modeling climate change. LASE has demonstrated the necessary potential in providing high resolution water vapor measurements that can advance the studies of tropospheric water vapor distributions. LASE has flown 19 times during the development of the instrument and the validation of the science data. A joint international field mission was completed in the summer of 1996; adding 9 more successful flights. The LASE Instument is being adapted to other aircraft platforms to support planned missions and to increase its utility.

  16. LASE Ti: Sapphire Laser

    NASA Technical Reports Server (NTRS)

    1995-01-01

    In the photo, Messrs. Leroy F. Matthews (left) and Frank J. Novak (Lockheed Engineering & Sciences Co.) are preparing the Lidar Atmospheric Sensing Experiment (LASE) Instrument for integration into a NASA/ER-2 aircraft for a field mission. LASE is the first fully- engineered, autonomous differential Absorption Lidar (DIAL) System for the measurement of water vapor, aerosol and cloud in the troposphere. LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150 mJ/pulse. The laser beam is seeded to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere with accuracy having less than 6% of error. No other instrument can provide the spatial coverage and accuracy of LASE. Water vapor is the most radiative active gas in the troposphere, and the lack of understanding about its distribution provides one of the largest uncertainties in modeling climate change. LASE has demonstrated the necessary potential in providing high resolution water vapor measurements that can advance the studies of tropospheric water vapor distributions. LASE has flown 19 times during the development of the instrument and the validation of the science data. A joint international field mission was completed in the summer of 1996; adding 9 more successful flights. The LASE Instrument is being adapted to other aircraft platforms to support planned missions and to increase its utility.

  17. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    NASA Astrophysics Data System (ADS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-01

    We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm-2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  18. Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.

    PubMed

    Kumaran, Raveen; Webster, Scott E; Penson, Shawn; Li, Wei; Tiedje, Thomas; Wei, Peng; Schiettekatte, Francois

    2009-11-01

    Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4). PMID:19881593

  19. Surface Structure of Protonated R-Sapphire (1$\\bar{1}$02) Studied by Sum-Frequency Vibrational Spectroscopy

    SciTech Connect

    Sung, Jaeho; Zhang, Luning; Tian, Chuanshan; Waychunas, Glenn A.; Shen, Y. Ron

    2011-03-23

    Sum frequency vibrational spectroscopy was used to study the protonated R-plane (1$\\bar{1}$02 ) sapphire surface. The OH stretch vibrational spectra show that the surface is terminated with three hydroxyl moieties, two from AlOH2 and one from Al2OH functional groups. The observed polarization dependence allows determination of the orientations of the three OH species. The results suggest that the protonated sapphire (1$\\bar{1}$02 ) surface differs from an ideal stoichimetric termination in a manner consistent with previous X-ray surface diffraction (crystal truncation rod) studies. However, in order to best explain the observed hydrogenbonding arrangement, surface oxygen spacing determined from the X-ray diffraction study requires modification.

  20. SAPPHIRE: scenarios, architecture, and process.

    PubMed

    Kay, S; Redman, R; McWilliams, A; Bradley, P; Daniels, A

    1994-06-01

    General Medical Practice (GMP) information systems within the UK are becoming more sophisticated and more complex and are widely available from numerous suppliers. Although such systems are viewed as being important, they are problematic in terms of interpreting and assessing their usefulness, and their impact upon work and the organisation (G. Walsham, Interpreting Information Systems in Organizations (Wiley, Chichester, 1993)). In particular, it is difficult for any who have an interest in these systems to apply existing technical specifications to a specific situation, and to match individual requirements with the supplier's products. The research project SAPPHIRE seeks to inform the decision making of stakeholders, e.g. GPs, facilitators and suppliers, with respect to procurement, update, design and supply of GMP systems by developing the means of evaluating such systems, and by facilitating an accreditation process through that evaluation. This extended paper introduces the multi-faceted approach, scenarios, architecture and process of SAPPHIRE. PMID:7956163

  1. Germanium Nanocrystals Embedded in Sapphire

    SciTech Connect

    Xu, Q.; Sharp, I.D.; Liao, C.Y.; Yi, D.O.; Ager III, J.W.; Beeman, J.W.; Yu, K.M.; Chrzan, D.C.; Haller, E.E.

    2005-04-15

    {sup 74}Ge nanocrystals are formed in a sapphire matrix by ion implantation followed by damage. Embedded nanocrystals experience large compressive stress relative to bulk, as embedded in sapphire melt very close to the bulk melting point (Tm = 936 C) whereas experience considerably lower stresses. Also, in situ TEM reveals that nanocrystals ion-beam-synthesized nanocrystals embedded in silica are observed to be spherical and measured by Raman spectroscopy of the zone center optical phonon. In contrast, reveals that the nanocrystals are faceted and have a bi-modal size distribution. Notably, the matrix remains crystalline despite the large implantation dose and corresponding thermal annealing. Transmission electron microscopy (TEM) of as-grown samples those embedded in silica exhibit a significant melting point hysteresis around T{sub m}.

  2. Sapphire decomposition and inversion domains in N-polar aluminum nitride

    SciTech Connect

    Hussey, Lindsay White, Ryan M.; Kirste, Ronny; Bryan, Isaac; Guo, Wei; Osterman, Katherine; Haidet, Brian; Bryan, Zachary; Bobea, Milena; Collazo, Ramón; Sitar, Zlatko; Mita, Seiji

    2014-01-20

    Transmission electron microscopy (TEM) techniques and potassium hydroxide (KOH) etching confirmed that inversion domains in the N-polar AlN grown on c-plane sapphire were due to the decomposition of sapphire in the presence of hydrogen. The inversion domains were found to correspond to voids at the AlN and sapphire interface, and transmission electron microscopy results showed a V-shaped, columnar inversion domain with staggered domain boundary sidewalls. Voids were also observed in the simultaneously grown Al-polar AlN, however no inversion domains were present. The polarity of AlN grown above the decomposed regions of the sapphire substrate was confirmed to be Al-polar by KOH etching and TEM.

  3. Sapphire statistical characterization and risk reduction program

    NASA Astrophysics Data System (ADS)

    McClure, Donald R.; Cayse, Robert; Black, David R.; Goodrich, Steven M.; Lagerloef, K. Peter D.; Harris, Daniel C.; McCullum, Dale; Platus, Daniel H.; Patty, Charles E., Jr.; Polvani, Robert S.

    2001-09-01

    The Sapphire Statistical Characterization and Risk Reduction Program tested 1400 4-point flexure bars with different crystal orientations at different temperatures to establish a mechanical strength database for engineering design. Sapphire coupons were selected to represent surfaces on two different missile windows and a missile dome. Sapphire was obtained from the same suppliers used for the windows or dome and, as much as possible, coupons were fabricated in the same manner as the corresponding part of the window or dome. For one missile window, sapphire from one fabricator was 50% stronger than sapphire made to the same specifications from the same blanks by another fabricator. In laser thermal shock tests, sapphire performed better than predicted from flexure tests. Of several nondestructive methods evaluated for their ability to identify mechanically weak specimens, only x-ray topography was correlated with strength for a limited set of specimens.

  4. Morphological stability of sapphire crystallization front

    NASA Astrophysics Data System (ADS)

    Baranov, V. V.; Nizhankovskyi, S. V.

    2016-03-01

    The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal-melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.

  5. Microwave Frequency Discriminator With Sapphire Resonator

    NASA Technical Reports Server (NTRS)

    Santiago, David G.; Dick, G. John

    1994-01-01

    Cooled sapphire resonator provides ultralow phase noise. Apparatus comprises microwave oscillator operating at nominal frequency of about 8.1 GHz, plus frequency-discriminator circuit measuring phase fluctuations of oscillator output. One outstanding feature of frequency discriminator is sapphire resonator serving as phase reference. Sapphire resonator is dielectric ring resonator operating in "whispering-gallery" mode. Functions at room temperature, but for better performance, typically cooled to operating temperature of about 80 K. Similar resonator described in "Sapphire Ring Resonator for Microwave Oscillator" (NPO-18082).

  6. Wetting and reaction promoted by ultrasound between sapphire and liquid Al-12Si alloy.

    PubMed

    Cui, Wei; Wang, Changwen; Yan, Jiuchun; Wang, Zhipeng; Wei, Daqing

    2013-01-01

    Ultrasonic-assisted wetting between sapphire bulks and liquid Al-12Si alloy in an atmospheric environment at 620 °C is carried out in this study. Complete, rather than partial, wetting and joining can be achieved with the aid of ultrasound. Growth of epitaxial alumina on sapphire bulks is promoted dramatically during ultrasonic-assisted wetting comparing to that during hot-dipping without ultrasound. XRD results show that the epitaxial alumina is non-crystalline. This indicates that the temperature on the surface of the sapphire substrate is not more than 1200 °C even though the collapse of acoustic cavitation bubbles could theoretically produce extremely high temperature. The bonding force at the interface between the Al-Si alloy and sapphire is strengthened because of the epitaxial alumina. The interfacial shear strength of sapphire/Al-Si alloy can reach as high as 60-65 MPa. The fracture morphology shows that cracks initiated at the interface between Si grains and the epitaxial alumina on sapphire. This result is especially useful for the joining of metals and ceramics. PMID:22929927

  7. Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Moldawer, Adam Lyle

    The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This PhD research addresses both the development of polar and non-polar GaN and AIN templates by Hydride Vapor Phase Epitaxy (HVPE) on sapphire and SiC substrates, as well as the growth and characterization of optoelectronic devices on these templates by molecular beam epitaxy (MBE). Polar and non-polar GaN templates have been grown in a vertical HVPE reactor on the C- and R-planes of sapphire respectively. The growth conditions have been optimized to allow the formation for thick (50um) GaN templates without cracks. These templates were characterized structurally by studying their surface morphologies by SEM and AFM, and their structure through XRD and TEM. The polar C-plane GaN templates were found to be atomically smooth. However, the surface morphology of the non-polar GaN films grown on the R-plane of sapphire were found to have a facetted surface morphology, with the facets intersecting at 120° angles. This surface morphology reflects an equilibrium growth, since the A-plane of GaN grows faster than the M-planes of GaN due to the lower atomic density of the plane. For the development of deep-UV optoelectronics, it is required to grow AIGaN quantum wells on AIN templates. However, since AIN is a high melting point material, such templates have to be grown at higher temperatures, close to half the melting point of the material (1500 °C). As these temperatures cannot be easily obtained by traditional furnace heating, an HVPE reactor has been designed to heat the substrate inductively to these temperatures. This apparatus has been used to grow high-quality, transparent AIN films

  8. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    PubMed

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies. PMID:22526246

  9. Chemical mechanical polishing (CMP) of sapphire

    NASA Astrophysics Data System (ADS)

    Zhu, Honglin

    The concept of chemical mechanical polishing (CMP) was examined for finishing sapphire. In this study sapphire was used as a model system for oxide ceramics. The removal rates were determined by weight loss. Surface quality and structure were characterized with surface probe microscopy (SPM). Polishing experiments were designed to test the chemically modified surface layer. A series of abrasives with various hardnesses including mono-crystalline and polycrystalline diamond, alpha and gamma alumina, zirconia, ceria and silica were used. Diaspore was also evaluated. The results indicated that, with similar particle size and shape, harder abrasives do not necessarily cause faster material removal and better surface finish, and abrasives with hardness equal to or less than sapphire such as alpha alumina and gamma alumina achieved the best surface finish and efficient material removal. A hypothesis was proposed that the sapphire surface was modified by water to form a thin hydration laver with structure and hardness close to diaspore. Abrasives with a hardness between diaspore and sapphire polished the c-plane of sapphire with good surface finish and efficient removal. SPM indicated the hydration layer on the c-plane surface was about 1 nm thick. Removal rate and surface finish as a function of pH were also examined on c-plane sapphire with nano-alumina abrasives. The removal rate as a function of pH was compared to the solubility behavior of alumina. The results showed the deviation of pH from the lowest solubility pH for alumina (pH = 5) was a driving force for the surface reaction to form a hydration layer. The anisotropy of sapphire strongly affects removal rate and surface quality in CMP. The relationships among orientation. pH and abrasive were studied for sapphire with c (0001), a (11-20), and m (10-10) planes. Based on the results, the CMP process for sapphire includes chemical reaction of the surface to form a thin reaction layer that is softer than sapphire

  10. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam Lee, Dong Nyung; Ju, Jin-Woo; Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.