Science.gov

Sample records for radiation hard monolithic

  1. Radiation hardness of a 180 nm SOI monolithic active pixel sensor

    NASA Astrophysics Data System (ADS)

    Fernandez-Perez, S.; Backhaus, M.; Pernegger, H.; Hemperek, T.; Kishishita, T.; Krüger, H.; Wermes, N.

    2015-10-01

    The use of Silicon-on-Insulator (SOI) technology as a particle detector in a high radiation environment is, at present, limited mostly by radiation effects on the transistor characteristics, back gate effect, and mutual coupling between the Buried Oxide (BOX) and the sensor. We have fabricated and tested a new 0.18 μm SOI CMOS monolithic pixel sensor using the XFAB process. In contrast to the most commonly used SOI technologies, this particular technology uses partially depleted SOI transistors, offering a double well structure, which shields the thin gate oxide transistors from the BOX. In addition, an increased distance between transistors and a thicker BOX than has been previously used offers promising solutions to the performance limitations mentioned above. The process further allows the use of high voltages (up to 200 V), which are used to partially deplete the substrate. Thus, the newly fabricated device in the XFAB process is especially interesting for applications in extremely high radiation environments, such as LHC experiments. A four stage validation programme of the technology and the fabricated monolithic pixel sensor has been performed and its results are shown in this paper. The first targets radiation hardness of the transistor characteristics up to 700 Mrad, the second investigates the existence of the back gate effect, the third one targets the coupling between the BOX and the sensor, and the fourth investigates the characterization of charge collection in the sensor diode below the BOX.

  2. Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

    SciTech Connect

    Pengg, F. |; Campbell, M.; Heijne, E.H.M.; Snoeys, W.

    1996-06-01

    Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e{sup {minus}}r.m.s. before and 150e{sup {minus}}r.m.s. after irradiation. With a discriminator threshold set to 5000e{sup {minus}}, which reduces for the same bias setting to 400e{sup {minus}} after irradiation, the threshold variation is 300e{sup {minus}}r.m.s. and 250e{sup {minus}}r.m.s. respectively. The time walk is 40ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation.

  3. MISTIC: Radiation hard ECRIS

    NASA Astrophysics Data System (ADS)

    Labrecque, F.; Lecesne, N.; Bricault, P.

    2008-10-01

    The ISAC RIB facility at TRIUMF utilizes up to 100 μA from the 500 MeV H- cyclotron to produce RIB using the isotopic separation on line (ISOL) method. In the moment, we are mainly using a hot surface ion source and a laser ion source to produce our RIB. A FEBIAD ion source has been recently tested at ISAC, but these ion sources are not suitable for gaseous elements like N, O, F, Ne, … , A new type of ion source is then necessary. By combining a high frequency electromagnetic wave and a magnetic confinement, the ECRIS [R. Geller, Electron Cyclotron Resonance Ion Source and ECR Plasmas, Institute of Physics Publishing, Bristol, 1996], [1] (electron cyclotron resonance ion source) can produce high energy electrons essential for efficient ionization of those elements. To this end, a prototype ECRIS called MISTIC (monocharged ion source for TRIUMF and ISAC complex) has been built at TRIUMF using a design similar to the one developed at GANIL [GANIL (Grand Accélérateur National d'Ions Lourds), www.ganil.fr], [2] The high level radiation caused by the proximity to the target prevented us to use a conventional ECRIS. To achieve a radiation hard ion source, we used coils instead of permanent magnets to produce the magnetic confinement. Each coil is supplied by 1000 A-15 V power supply. The RF generator cover a frequency range from 2 to 8 GHz giving us all the versatility we need to characterize the ionization of the following elements: He, Ne, Ar, Kr, Xe, C, O, N, F. Isotopes of these elements are involved in star thermonuclear cycles and, consequently, very important for researches in nuclear astrophysics. Measures of efficiency, emittance and ionization time will be performed for each of those elements. Preliminary tests show that MISTIC is very stable over a large range of frequency, magnetic field and pressure.

  4. Radiation Hardness Assurance (RHA) Guideline

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Radiation Hardness Assurance (RHA) consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the mission space environment. The subset of interests for NEPP and the REAG, are EEE parts. It is important to register that all of these undertakings are in a feedback loop and require constant iteration and updating throughout the mission life. More detail can be found in the reference materials on applicable test data for usage on parts.

  5. Development of radiation hard scintillators

    SciTech Connect

    Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G. ); Blackburn, R. )

    1992-05-01

    Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro.

  6. Automated radiation hard ASIC design tool

    NASA Technical Reports Server (NTRS)

    White, Mike; Bartholet, Bill; Baze, Mark

    1993-01-01

    A commercial based, foundry independent, compiler design tool (ChipCrafter) with custom radiation hardened library cells is described. A unique analysis approach allows low hardness risk for Application Specific IC's (ASIC's). Accomplishments, radiation test results, and applications are described.

  7. Studies on electrochemical sodium storage into hard carbons with binder-free monolithic electrodes

    NASA Astrophysics Data System (ADS)

    Hasegawa, George; Kanamori, Kazuyoshi; Kannari, Naokatsu; Ozaki, Jun-ichi; Nakanishi, Kazuki; Abe, Takeshi

    2016-06-01

    Hard carbons emerge as one of the most promising candidate for an anode of Na-ion batteries. This research focuses on the carbon monolith derived from resorcinol-formaldehyde (RF) gels as a model hard carbon electrode. A series of binder-free monolithic carbon electrodes heat-treated at varied temperatures allow the comparative investigation of the correlation between carbon nanotexture and electrochemical Na+-ion storage. The increase in carbonization temperature exerts a favorable influence on electrode performance, especially in the range between 1600 °C and 2500 °C. The comparison between Li+- and Na+-storage behaviors in the carbon electrodes discloses that the Na+-trapping in nanovoids is negligible when the carbonization temperature is higher than 1600 °C. On the other hand, the high-temperature sintering at 2500-3000 °C enlarges the resistance for Na+-insertion into interlayer spacing as well as Na+-filling into nanovoids. In addition, the study on the effect of pore size clearly demonstrates that not the BET surface area but the surface area related to meso- and macropores is a predominant factor for the initial irreversible capacity. The outcomes of this work are expected to become a benchmark for other hard carbon electrodes prepared from various precursors.

  8. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  9. Radiation-Hardness Data For Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  10. Radiation Hardness Assurance for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Day, John H. (Technical Monitor)

    2002-01-01

    The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section

  11. Development of radiation hard scintillators

    NASA Astrophysics Data System (ADS)

    Markley, F.; Davidson, M.; Keller, J.; Foster, G.; Pla-Dalmau, A.; Harmon, J.; Biagtan, E.; Schueneman, G.; Senchishin, V.; Gustfason, H.

    1993-11-01

    The authors have demonstrated that the radiation stability of scintillators made from styrene polymer is very much improved by compounding with pentaphenyl trimethyl trisiloxane (DC 705 vacuum pump oil). The resulting scintillators are softer than desired, so they decided to make the scintillators directly from monomer where the base resin could be easily crosslinked to improve the mechanical properties. They can now demonstrate that scintillators made directly from the monomer, using both styrene and 4-methyl styrene, are also much more radiation resistant when modified with DC705 oil. In fact, they retain from 92% to 95% of their original light output after gamma irradiation to 10 Mrads in nitrogen with air annealing. When these scintillators made directly from monomer are compared with scintillators of the same composition made from polymer the latter have much higher light outputs. They commonly reach 83% while those made from monomer give only 50% to 60% relative to the reference, BC408. When oil modified scintillators using both p-terphenyl and tetra phenyl butadiene are compared with identical scintillators except that they use 3 hydroxy-flavone as the only luminophore the radiation stability is the same. However the 3HF system gives only 30% as much light as BC408 instead of 83% when both are measured with a green extended Phillips XP2081B phototube.

  12. Development of radiation hard scintillators

    SciTech Connect

    Markley, F.; Davidson, M.; Keller, J.; Foster, G.; Pla-Dalmau, A.; Harmon, J.; Biagtan, E.; Schueneman, G.; Senchishin, V.; Gustfason, H.; Rivard, M.

    1993-11-01

    The authors have demonstrated that the radiation stability of scintillators made from styrene polymer is very much improved by compounding with pentaphenyltrimethyltrisiloxane (DC 705 vacuum pump oil). The resulting scintillators are softer than desired, so they decided to make the scintillators directly from monomer where the base resin could be easily crosslinked to improve the mechanical properties. They can now demonstrate that scintillators made directly from the monomer, using both styrene and 4-methyl styrene, are also much more radiation resistant when modified with DC705 oil. In fact, they retain from 92% to 95% of their original light output after gamma irradiation to 10 Mrads in nitrogen with air annealing. When these scintillators made directly from monomer are compared with scintillators of the same composition made from polymer the latter have much higher light outputs. They commonly reach 83% while those made form monomer give only 50% to 60% relative to the reference, BC408. When oil modified scintillators using both p-terphenyl and tetraphenylbutadiene are compared with identical scintillators except that they use 3 hydroxy-flavone as the only luminophore the radiation stability is the same. However the 3HF system gives only 30% as much light as BC408 instead of 83% when both are measured with a green extended Phillips XP2081B phototube.

  13. Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

    NASA Technical Reports Server (NTRS)

    McKeever, S. W. S.; Yukihara, E. G.; Stoebe, T. G.; Chen, T.-C.

    2005-01-01

    The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

  14. Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Buchner, Stephen

    2007-01-01

    This presentation discusses radiation hardness assurance (RHA) for space systems, providing both the programmatic aspects of RHA and the RHA procedure. RHA consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the space radiation environment. RHA also pertains to environment definition, part selection, part testing, spacecraft layout, radiation tolerant design, and mission/system/subsystems requirements. RHA procedure consists of establishing mission requirements, defining and evaluating the radiation hazard, selecting and categorizing the appropriate parts, and evaluating circuit response to hazard. The RHA approach is based on risk management and is confined only to parts, it includes spacecraft layout, system/subsystem/circuit design, and system requirements and system operations. RHA should be taken into account in the early phases of a program including the proposal and feasibility analysis phases.

  15. Radiation hard avalanche photodiodes for CMS ECAL

    NASA Astrophysics Data System (ADS)

    Grahl, J.; Kronquist, I.; Rusack, R.; Singovski, A.; Kuznetsov, A.; Musienko, Y.; Reucroft, S.; Swain, J.; Deiters, K.; Ingram, Q.; Renker, D.; Sakhelashvili, T.

    2003-05-01

    The photo detectors of the CMS electromagnetic calorimeter have to operate in a rather hostile environment, in a strong magnetic field of 4 T and under unprecedented radiation levels. Avalanche Photo Diodes (APDs) have been chosen to detect the scintillation light of the 62,000 lead tungstate crystals in the barrel part of the calorimeter. After a 6 year long R&D work Hamamatsu Photonics produces APDs with a structure that is basically radiation hard. Only a few percent of the delivered APDs are weak due to defects at the surface caused by dust particles in the production process. Since a reliability of 99.9% is required, a method to detect weak APDs before they are built into the detector had to be developed. The described screening method is a combination of 60Co irradiations and annealing under bias of all APDs and irradiations with hadrons on a sampling basis.

  16. Fault-Tolerant, Radiation-Hard DSP

    NASA Technical Reports Server (NTRS)

    Czajkowski, David

    2011-01-01

    Commercial digital signal processors (DSPs) for use in high-speed satellite computers are challenged by the damaging effects of space radiation, mainly single event upsets (SEUs) and single event functional interrupts (SEFIs). Innovations have been developed for mitigating the effects of SEUs and SEFIs, enabling the use of very-highspeed commercial DSPs with improved SEU tolerances. Time-triple modular redundancy (TTMR) is a method of applying traditional triple modular redundancy on a single processor, exploiting the VLIW (very long instruction word) class of parallel processors. TTMR improves SEU rates substantially. SEFIs are solved by a SEFI-hardened core circuit, external to the microprocessor. It monitors the health of the processor, and if a SEFI occurs, forces the processor to return to performance through a series of escalating events. TTMR and hardened-core solutions were developed for both DSPs and reconfigurable field-programmable gate arrays (FPGAs). This includes advancement of TTMR algorithms for DSPs and reconfigurable FPGAs, plus a rad-hard, hardened-core integrated circuit that services both the DSP and FPGA. Additionally, a combined DSP and FPGA board architecture was fully developed into a rad-hard engineering product. This technology enables use of commercial off-the-shelf (COTS) DSPs in computers for satellite and other space applications, allowing rapid deployment at a much lower cost. Traditional rad-hard space computers are very expensive and typically have long lead times. These computers are either based on traditional rad-hard processors, which have extremely low computational performance, or triple modular redundant (TMR) FPGA arrays, which suffer from power and complexity issues. Even more frustrating is that the TMR arrays of FPGAs require a fixed, external rad-hard voting element, thereby causing them to lose much of their reconfiguration capability and in some cases significant speed reduction. The benefits of COTS high

  17. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  18. High efficiency, radiation-hard solar cells

    SciTech Connect

    Ager III, J.W.; Walukiewicz, W.

    2004-10-22

    The direct gap of the In{sub 1-x}Ga{sub x}N alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). This opens the intriguing possibility of using this single ternary alloy system in single or multi-junction (MJ) solar cells of the type used for space-based surveillance satellites. To evaluate the suitability of In{sub 1-x}Ga{sub x}N as a material for space applications, high quality thin films were grown with molecular beam epitaxy and extensive damage testing with electron, proton, and alpha particle radiation was performed. Using the room temperature photoluminescence intensity as a indirect measure of minority carrier lifetime, it is shown that In{sub 1-x}Ga{sub x}N retains its optoelectronic properties at radiation damage doses at least 2 orders of magnitude higher than the damage thresholds of the materials (GaAs and GaInP) currently used in high efficiency MJ cells. This indicates that the In{sub 1-x}Ga{sub x}N is well-suited for the future development of ultra radiation-hard optoelectronics. Critical issues affecting development of solar cells using this material system were addressed. The presence of an electron-rich surface layer in InN and In{sub 1-x}Ga{sub x}N (0 < x < 0.63) was investigated; it was shown that this is a less significant effect at large x. Evidence of p-type activity below the surface in Mg-doped InN was obtained; this is a significant step toward achieving photovoltaic action and, ultimately, a solar cell using this material.

  19. Radiation hardness characteristics of Si-PIN radiation detectors

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low leakage current, high resistivity (>11 kΩ cm) and low capacitance for high-energy physics and X-ray spectroscopy. Floating-zone (FZ) 6-in. diameter N-type silicon wafers, with <1 1 1> crystal orientation and 675 μm thick, were used in the detector fabrication. The active areas are 3 mm×3 mm, 5 mm×5 mm and 10 mm×10 mm. We used a double deep-diffused structure at the edge of the active area for protection from the surface leakage path. We also compared the electrical performance of the Si-PIN detector with anti-reflective coating (ARC). For a detector with an active area of 3 mm×3 mm, the leakage current is about 1.9 nA and 7.4 nA at a 100 V reverse bias voltage, and 4.6 pF and 4.4 pF capacitance for the detector with and without an ARC, respectively. In addition, to compare the energy resolution in terms of radiation hardness, we measured the energy spectra with 57Co and 133Ba before the irradiation. Using developed preamplifiers (KAERI-PA1) that have ultra-low noise and high sensitivity, and a 3 mm×3 mm Si-PIN radiation detector, we obtained energy resolutions with 122 keV of 57Co and 81 keV of 133Ba of 0.221 keV and 0.261 keV, respectively. After 10, 100, 103, 104 and 105 Gy irradiation, we tested the characteristics of the radiation hardness on the Si-PIN radiation detectors in terms of electrical and energy spectra performance changes. The fabricated Si-PIN radiation detectors are working well under high dose irradiation conditions.

  20. 1500 Gate standard cell compatible radiation hard gate array

    SciTech Connect

    Mills, B.D.; Shafer, B.D.; Melancon, E.P.

    1984-11-01

    The G1500 gate array combines Sandia Labs' 4/3..mu.. CMOS silicon gate radiation hard process with a novel gate isolated standard cell compatible design for quick turnaround time, low cost, and radiation hardness. This device is hard to 5 x 10/sup 5/ rads, utilizes a configuration that provides high packing density, and is supported on both the Daisy and Mentor workstations. This paper describes Sandia Labs' radiation hard 4/3..mu.. process, the G1500's unique design, and the complete design capabilities offered by the workstations.

  1. Geometric optimization for radiation hardness assurance

    NASA Astrophysics Data System (ADS)

    Northum, J.; Guetersloh, S.

    The probability of a single event effect occurring is generally a function of the energy deposited in a sensitive volume, which is typically expressed as the absorbed dose in that volume. For short segments of high energy particle tracks, the dose due to a single event is proportional to the chord length through the sensitive volume. Thus, the distribution of dose in chord length is likely to relate to the probability of single event effects. For various geometries, a differential chord length distribution was generated and from this the dose distribution, frequency mean chord length, and dose mean chord length were calculated. In every case, the dose mean chord length was greater than the frequency mean chord length by a minimum of 26% and increased with the eccentricity of the volume. The large value of the dose mean chord length relative to the frequency mean chord length demonstrates the need to consider rare, long-chord-length crossings in radiation hardness testing, despite their relatively low probability of occurrence.

  2. Implementing QML for radiation hardness assurance

    NASA Astrophysics Data System (ADS)

    Winokur, P. S.; Sexton, F. W.; Fleetwood, D. M.; Terry, M. D.; Shaneyfelt, M. R.

    1990-12-01

    The US government has proposed a qualified manufacturers list (QML) methodology to qualify integrated circuits for high reliability and radiation hardness. An approach to implementing QML for single-event upset (SEU) immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates is demonstrated. It is seen that the process capability indices, Cp and Cpk, for the manufacture of 400-k-ohm feedback resistors required to provide SEU tolerance do not conform to 6 sigma quality standards. For total-dose, interface trap charge, Delta Vit, shifts measured on transistors are correlated with circuit response in the space environment. Statistical process control (SPC) is illustrated for Delta Vit, and violations of SPC rules are interpreted in terms of continuous improvement. Design validation for SEU and quality conformance inspections for total-dose are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, 3-D device-plus-circuit codes, and improved design simulators.

  3. Development of achromatic full-field hard x-ray microscopy with two monolithic imaging mirrors

    NASA Astrophysics Data System (ADS)

    Matsuyama, S.; Kino, H.; Yasuda, S.; Kohmura, Y.; Okada, H.; Ishikawa, T.; Yamauchi, K.

    2015-09-01

    Advanced Kirkpatrick-Baez mirror optics using two monolithic imaging mirrors was developed to realize an achromatic, high-resolution, and a high-stability full-field X-ray microscope. The mirror consists of an elliptical section and a hyperbolic section on a quartz glass substrate, in which the geometry follows the Wolter (type I) optics rules. A preliminary test was performed at SPring-8 using X-rays monochromatized to 9.881 keV. A 100-nm feature on a Siemens star chart could be clearly observed.

  4. Development of a radiation-hard photomultiplier tube

    NASA Technical Reports Server (NTRS)

    Birnbaum, M. M.; Bunker, R. L.; Roderick, J.; Stephenson, K.

    1984-01-01

    In a radiation-hard photomultiplier tube (PMT) such as has been developed for stabilization of the Galileo spacecraft as it goes through the Jovian high energy radiation belts, the primary effects of high energy electron and proton radiation that must be resisted are the production of fluorescence and Cerenkov emission. The present PMT envelope is ceramic rather than glass, and employs a special, electron-focusing design which will collect, accelerate and amplify electrons only from desired photocathode areas. Tests in a Co-60 radiation facility have shown that the radiation-hard PMT produces less than 2.5 percent of the radiation noise of a standard PMT.

  5. Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Olson, J. M.; Bertness, K. A.; Friedman, D. J.; Kibbler, A.; Cavicchi, B. T.; Krut, D. D.

    1991-01-01

    The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

  6. Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

    NASA Technical Reports Server (NTRS)

    Pugel, Diane

    2011-01-01

    This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

  7. Resonance hard radiation in a gas-loaded FEL

    SciTech Connect

    Gevorgian, L.A.

    1995-12-31

    The process of induced radiation under the condition when the relativistic beam oscillation frequency coincides with the plasma frequency of the FEL filling gas, is investigated. Such a resonance results in a giant enhancement of interaction between electrons and photons providing high gain in the hard FEL frequency region. Meanwhile the spectralwidth of the spontaneous radiation is broadened significantly. A method is proposed for maintaining the synchronism between the electron oscillation frequency and the medium plasma frequency, enabling to transform the electron energy into hard radiation with high efficiency.

  8. Radiation Hard 0.13 Micron CMOS Library at IHP

    NASA Astrophysics Data System (ADS)

    Jagdhold, U.

    2013-08-01

    To support space applications we have developed an 0.13 micron CMOS library which should be radiation hard up to 200 krad. The article describes the concept to come to a radiation hard digital circuit and was introduces in 2010 [1]. By introducing new radiation hard design rules we will minimize IC-level leakage and single event latch-up (SEL). To reduce single event upset (SEU) we add two p-MOS transistors to all flip flops. For reliability reasons we use double contacts in all library elements. The additional rules and the library elements are integrated in our Cadence mixed signal design kit, “Virtuoso” IC6.1 [2]. A test chip is produced with our in house 0.13 micron BiCMOS technology, see Ref. [3]. As next step we will doing radiation tests according the european space agency (ESA) specifications, see Ref. [4], [5].

  9. Radiation Hardness Assurance (RHA) for Small Missions

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Varied mission life and complexity is growing for small spacecraft. Small missions benefit from detailed hazard definition and evaluation as done in the past. Requirements need to flow from the system down to the parts level and aid system level radiation tolerance. RHA is highlighted with increasing COTS usage.

  10. Curve Fitting Solar Cell Degradation Due to Hard Particle Radiation

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.; Cikoski, Rebecca; Mekadenaumporn, Danchai

    2003-01-01

    This paper investigates the suitability of the equation for accurately defining solar cell parameter degradation as a function of hard particle radiation. The paper also provides methods for determining the constants in the equation and compares results from this equation to those obtained by the more traditionally used.

  11. Radiation Hard 0.25 Micron CMOS Library at IHP

    NASA Astrophysics Data System (ADS)

    Jagdhold, U.

    2008-08-01

    To support space applications we have produced a test chip with our in house 0.25 micron BiCMOS- Technology. Then the chips were radiated and measured. During measurements no threshold voltage shift and no single event latchup (SEL) were obtained up to a level of 200 krad. As conclusion of the measurement we developed new radiation hard design rules and according to these rules we created a new radiation hard CMOS library. With this new library we produced a Leon3 chip with triple module redundancy. Single event upsets did occur. Therefore we upgrade the library to make the flip flops more resistant against single event upset (SEU) by adding two p-MOS transistors.

  12. Radiation hardness and mechanical durability of Kuraray optical fibers

    NASA Astrophysics Data System (ADS)

    Hara, K.; Hata, K.; Kim, S.; Mishina, M.; Sano, M.; Seiya, Y.; Takikawa, K.; Tanaka, M.; Yasuoka, K.

    1998-02-01

    The radiation hardness of Kuraray 3HF scintillating and clear optical fibers has been investigated using 60Co γ-rays in the dose range 0.4-500 krad. Significant initial degradation in the attenuation length was observed both for 3HF and clear fibers at a dose as small as 10 krad. The radiation hardness of both the scintillating and clear fibers is identical if it is expressed in terms of the ratio of the attenuation lengths after to before irradiation. The radiation damage of 3HF fibers was observed to recover substantially with a time scale of a few months. The attenuation length and mechanical durability against bending were measured for clear fibers by changing S parameter which characterizes the softness of the fibers.

  13. Radiation-hard/high-speed data transmission using optical links

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Abi, B.; Fernando, W.; Kagan, H. P.; Kass, R. D.; Lebbai, M. R. M.; Moore, J. R.; Rizatdinova, F.; Skubic, P. L.; Smith, D. S.

    2009-12-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We investigate the radiation-hardness of various components for possible application in the data transmission upgrade. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs from various sources using 24 GeV/c protons at CERN. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, especially for the GaAs devices. We have designed the ASICs for the opto-link applications and find that the degradation with radiation is acceptable.

  14. RD50 Collaboration overview: Development of new radiation hard detectors

    NASA Astrophysics Data System (ADS)

    Kuehn, S.

    2016-07-01

    Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors.

  15. Development of a radiation-hard CMOS process

    NASA Technical Reports Server (NTRS)

    Power, W. L.

    1983-01-01

    It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

  16. High Speed, Radiation Hard CMOS Pixel Sensors for Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Contarato, Devis; Denes, Peter; Doering, Dionisio; Joseph, John; Krieger, Brad

    CMOS monolithic active pixel sensors are currently being established as the technology of choice for new generation digital imaging systems in Transmission Electron Microscopy (TEM). A careful sensor design that couples μm-level pixel pitches with high frame rate readout and radiation hardness to very high electron doses enables the fabrication of direct electron detectors that are quickly revolutionizing high-resolution TEM imaging in material science and molecular biology. This paper will review the principal characteristics of this novel technology and its advantages over conventional, optically-coupled cameras, and retrace the sensor development driven by the Transmission Electron Aberration corrected Microscope (TEAM) project at the LBNL National Center for Electron Microscopy (NCEM), illustrating in particular the imaging capabilities enabled by single electron detection at high frame rate. Further, the presentation will report on the translation of the TEAM technology to a finer feature size process, resulting in a sensor with higher spatial resolution and superior radiation tolerance currently serving as the baseline for a commercial camera system.

  17. Radiation hardness of three-dimensional polycrystalline diamond detectors

    SciTech Connect

    Lagomarsino, Stefano Sciortino, Silvio; Bellini, Marco; Corsi, Chiara; Cindro, Vladimir; Kanxheri, Keida; Servoli, Leonello; Morozzi, Arianna; Passeri, Daniele; Schmidt, Christian J.

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  18. Radiation-hard electrical coil and method for its fabrication

    DOEpatents

    Grieggs, R.J.; Blake, R.D.; Gac, F.D.

    1982-06-29

    A radiation-hard insulated electrical coil and method for making the same are disclosed. In accordance with the method, a conductor, preferably copper, is wrapped with an aluminum strip and then tightly wound into a coil. The aluminum-wrapped coil is then annealed to relax the conductor in the coiled configuration. The annealed coil is then immersed in an alkaline solution to dissolve the aluminum strip, leaving the bare conductor in a coiled configuration with all of the windings closely packed yet uniformly spaced from one another. The coil is then insulated with a refractory insulating material. In the preferred embodiment, the coil is insulated by coating it with a vitreous enamel and subsequently potting the enamelled coil in a castable ceramic concrete. The resulting coil is substantially insensitive to radiation and may be operated continuously in high radiation environments for long periods of time.

  19. Pitch dependence of the tolerance of CMOS monolithic active pixel sensors to non-ionizing radiation

    NASA Astrophysics Data System (ADS)

    Doering, D.; Deveaux, M.; Domachowski, M.; Fröhlich, I.; Koziel, M.; Müntz, C.; Scharrer, P.; Stroth, J.

    2013-12-01

    CMOS monolithic active pixel sensors (MAPS) have demonstrated excellent performance as tracking detectors for charged particles. They provide an outstanding spatial resolution (a few μm), a detection efficiency of ≳ 99.9 %, very low material budget (0.05 %X0) and good radiation tolerance (≳ 1 Mrad, ≳1013neq /cm2) (Deveaux et al. [1]). This makes them an interesting technology for various applications in heavy ion and particle physics. Their tolerance to bulk damage was recently improved by using high-resistivity (∼ 1 kΩ cm) epitaxial layers as sensitive volume (Deveaux et al. [1], Dorokhov et al. [2]). The radiation tolerance of conventional MAPS is known to depend on the pixel pitch. This is as a higher pitch extends the distance, which signal electrons have to travel by thermal diffusion before being collected. Increased diffusion paths turn into a higher probability of loosing signal charge due to recombination. Provided that a similar effect exists in MAPS with high-resistivity epitaxial layer, it could be used to extend their radiation tolerance further. We addressed this question with MIMOSA-18AHR prototypes, which were provided by the IPHC Strasbourg and irradiated with reactor neutrons. We report about the results of this study and provide evidences that MAPS with 10 μm pixel pitch tolerate doses of ≳ 3 ×1014neq /cm2.

  20. Studying radiation hardness of a cadmium tungstate crystal based radiation detector

    NASA Astrophysics Data System (ADS)

    Shtein, M. M.; Smekalin, L. F.; Stepanov, S. A.; Zatonov, I. A.; Tkacheva, T. V.; Usachev, E. Yu

    2016-06-01

    The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation.

  1. GaN as a radiation hard particle detector

    NASA Astrophysics Data System (ADS)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O'Shea, V.

    2007-06-01

    Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 μm and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage ( I- V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 μm epitaxial GaN irradiated to fluences of 1016 protons cm-2 and 1016 neutrons cm-2 show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device.

  2. Implementing QML (Qualified Manufacturers List) for radiation hardness assurance

    SciTech Connect

    Winokur, P.S.; Sexton, F.W.; Fleetwood, D.M.; Terry, M.D.; Shaneyfelt, M.R.; Dressendorfer, P.V.; Schwank, J.R.

    1990-01-01

    Statistical process control (SPC) of technology parameters relevant to radiation hardness, test structure to Integrated Circuit (IC) correlation, and extrapolation from laboratory to threat scenarios are keys to implementing Qualified Manufacture's List (QML) for radiation hardness assurance in a cost-effective manner. Data from approximately 300 wafer lots fabricated in Sandia's 4/3-{mu}m and Complementry Metal Oxide Semiconductor (CMOS) IIIA (2-{mu}m) technologies are used to demonstrate approaches to, and highlight issues associated with, implementing QML for radiation-hardened CMOS in space applications. An approach is demonstrated to implement QML for signal-event upset SEU immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates. It is seen that the process capability indices, C{sub p} and C{sub pk}, for the manufacture of 400 k{Omega} feedback resistors required to provide SEU tolerance do not conform to 6{sigma}'' quality standards. For total-dose, {triangle}V{sub it} shifts measured on transistors are correlated with circuit response in the space environment. SPC is illustrated for {triangle}V{sub it}, and violations of SPC rules are interpreted in terms of continuous improvement. Finally, design validation for SEU, and quality conformance inspections for total-dose, are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, three-dimensional device-plus-circuit codes, and improved design simulators. 29 refs., 10 figs., 1 tab.

  3. Characterisation of a PERCIVAL monolithic active pixel prototype using synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Correa, J.; Bayer, M.; Göttlicher, P.; Lange, S.; Marras, A.; Niemann, M.; Reza, S.; Shevyakov, I.; Smoljanin, S.; Tennert, M.; Xia, Q.; Viti, M.; Wunderer, C. B.; Zimmer, M.; Dipayan, D.; Guerrini, N.; Marsh, B.; Sedgwick, I.; Turchetta, R.; Cautero, G.; Giuressi, D.; Khromova, A.; Pinaroli, G.; Menk, R.; Stebel, L.; Fan, R.; Marchal, J.; Pedersen, U.; Rees, N.; Steadman, P.; Sussmuth, M.; Tartoni, N.; Yousef, H.; Hyun, H. J.; Kim, K.; Rah, S.; Graafsma, H.

    2016-02-01

    PERCIVAL ("Pixelated Energy Resolving CMOS Imager, Versatile And Large") is a monolithic active pixel sensor (MAPS) based on CMOS technology. Is being developed by DESY, RAL/STFC, Elettra, DLS, and PAL to address the various requirements of detectors at synchrotron radiation sources and Free Electron Lasers (FELs) in the soft X-ray regime. These requirements include high frame rates and FELs base-rate compatibility, large dynamic range, single-photon counting capability with low probability of false positives, high quantum efficiency (QE), and (multi-)megapixel arrangements with good spatial resolution. Small-scale back-side-illuminated (BSI) prototype systems are undergoing detailed testing with X-rays and optical photons, in preparation of submission of a larger sensor. A first BSI processed prototype was tested in 2014 and a preliminary result—first detection of 350eV photons with some pixel types of PERCIVAL—reported at this meeting a year ago. Subsequent more detailed analysis revealed a very low QE and pointed to contamination as a possible cause. In the past year, BSI-processed chips on two more wafers were tested and their response to soft X-ray evaluated. We report here the improved charge collection efficiency (CCE) of different PERCIVAL pixel types for 400eV soft X-rays together with Airy patterns, response to a flat field, and noise performance for such a newly BSI-processed prototype sensor.

  4. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  5. Super radiation hard vacuum phototriodes for the CMS endcap ECAL

    NASA Astrophysics Data System (ADS)

    Gusev, Yu. I.; Kovalev, A. I.; Levchenko, L. A.; Lukianov, V. N.; Moroz, F. V.; Mamaeva, G. A.; Seliverstov, D. M.; Trautman, V. Yu.; Yakorev, D. O.

    2004-12-01

    The energy resolution σ/E of the electromagnetic calorimeter (ECAL) in the energy range of 50-500 GeV is defined mainly by two terms: stochastic α/√E and constant C. The photoreadout of the CMS Endcap ECAL consists of vacuum phototriodes (VPT), which are broadening a signal from np photoelectrons characterized by the excess noise factor F=np(σ/E)2. The technical specification of the CMS ECAL requires the value of F to be smaller than 4 in the CMS LHC environment during 10 years of detector operation. In this paper we present results of the VPT performance study in a magnetic field up to 4 T, in a gamma radiation field of 0-50 kGy and in a neutron fluence of 7×1015 n/cm2. The standard phototriodes FEU-188 with faceplates from UV glass used in CMS ECAL as well as VPTs with super radiation hard cerium-doped glasses were investigated at the 60Co gamma facility, a neutron generator and a nuclear reactor in the Petersburg Nuclear Physics Institute (PNPI). The dependence of the VPT gain and the excess noise factor in magnetic fields on the fine-mesh plane orientation has also been studied.

  6. Radiation hardness of the storage phosphor europium doped potassium chloride for radiation therapy dosimetry

    PubMed Central

    Driewer, Joseph P.; Chen, Haijian; Osvet, Andres; Low, Daniel A.; Li, H. Harold

    2011-01-01

    Purpose: An important property of a reusable dosimeter is its radiation hardness, that is, its ability to retain its dosimetric merits after irradiation. The radiation hardness of europium doped potassium chloride (KCl:Eu2+), a storage phosphor material recently proposed for radiation therapy dosimetry, is examined in this study. Methods: Pellet-style KCl:Eu2+ dosimeters, 6 mm in diameter, and 1 mm thick, were fabricated in-house for this study. The pellets were exposed by a 6 MV photon beam or in a high dose rate 137Cs irradiator. Macroscopic properties, such as radiation sensitivity, dose response linearity, and signal stability, were studied with a laboratory photostimulated luminescence (PSL) readout system. Since phosphor performance is related to the state of the storage centers and the activator, Eu2+, in the host lattice, spectroscopic and temporal measurements were carried out in order to explore radiation-induced changes at the microscopic level. Results: KCl:Eu2+ dosimeters retained approximately 90% of their initial signal strength after a 5000 Gy dose history. Dose response was initially supralinear over the dose range of 100–700 cGy but became linear after 60 Gy. Linearity did not change significantly in the 0–5000 Gy dose history spanned in this study. Annealing high dose history chips resulted in a return of supralinearity and a recovery of sensitivity. There were no significant changes in the PSL stimulation spectra, PSL emission spectra, photoluminescence spectra, or luminescence lifetime, indicating that the PSL signal process remains intact after irradiation but at a reduced efficiency due to reparable radiation-induced perturbations in the crystal lattice. Conclusions: Systematic studies of KCl:Eu2+ material are important for understanding how the material can be optimized for radiation therapy dosimetry purposes. The data presented here indicate that KCl:Eu2+ exhibits strong radiation hardness and lends support for further investigations

  7. Radiation hardness of the storage phosphor europium doped potassium chloride for radiation therapy dosimetry

    SciTech Connect

    Driewer, Joseph P.; Chen, Haijian; Osvet, Andres; Low, Daniel A.; Li, H. Harold

    2011-08-15

    Purpose: An important property of a reusable dosimeter is its radiation hardness, that is, its ability to retain its dosimetric merits after irradiation. The radiation hardness of europium doped potassium chloride (KCl:Eu{sup 2+}), a storage phosphor material recently proposed for radiation therapy dosimetry, is examined in this study. Methods: Pellet-style KCl:Eu{sup 2+} dosimeters, 6 mm in diameter, and 1 mm thick, were fabricated in-house for this study. The pellets were exposed by a 6 MV photon beam or in a high dose rate {sup 137}Cs irradiator. Macroscopic properties, such as radiation sensitivity, dose response linearity, and signal stability, were studied with a laboratory photostimulated luminescence (PSL) readout system. Since phosphor performance is related to the state of the storage centers and the activator, Eu{sup 2+}, in the host lattice, spectroscopic and temporal measurements were carried out in order to explore radiation-induced changes at the microscopic level. Results: KCl:Eu{sup 2+} dosimeters retained approximately 90% of their initial signal strength after a 5000 Gy dose history. Dose response was initially supralinear over the dose range of 100-700 cGy but became linear after 60 Gy. Linearity did not change significantly in the 0-5000 Gy dose history spanned in this study. Annealing high dose history chips resulted in a return of supralinearity and a recovery of sensitivity. There were no significant changes in the PSL stimulation spectra, PSL emission spectra, photoluminescence spectra, or luminescence lifetime, indicating that the PSL signal process remains intact after irradiation but at a reduced efficiency due to reparable radiation-induced perturbations in the crystal lattice. Conclusions: Systematic studies of KCl:Eu{sup 2+} material are important for understanding how the material can be optimized for radiation therapy dosimetry purposes. The data presented here indicate that KCl:Eu{sup 2+} exhibits strong radiation hardness and

  8. A MONOLITHIC PREAMPLIFIER-SHAPER FOR MEASUREMENT LOSS AND TRANSITION RADIATION.

    SciTech Connect

    KANDASAMY,A.

    1999-11-08

    A custom monolithic circuit has been developed for the Time Expansion Chamber (TEC) of the PHENIX detector at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL). This detector identifies particles by sampling their ionization energy loss (dE/dx) over a 3 cm drift space and by detecting associated transition radiation (TR) photons. The requirement of being simultaneously sensitive to dE/dx and TR events requires a dual-gain system. We have developed a compact solution featuring an octal preamplifier/shaper (P/S) IC with a split gain stage. The circuit, fabricated in 1.2 {micro}m CMOS process, incorporates a trans-impedance preamplifier and a 70 ns unipolar CR-RC{sup 4} shaper with ion tail compensation and active DC offset cancellation. Digitally selectable gain, peaking time, and tail cancellation as well as channel-by-channel charge injection and disable can be configured in the system via a 3-wire interface. The 3.5 x 5 mm{sup 2} die is packaged in a fine-pitch 64-pin PQFP. Equivalent input noise is less than 1500 rms electrons at a power dissipation of 30 mW per channel. On a sample of 2400 chips, the DC offset was 2.3 {+-} 3 mV rms without trimming. A chamber-mounted TEC-PS Printed Circuit Board (PCB) houses four PIS chips, on-board calibration circuit, and 64 analog differential line drivers which transmit the shaped pulses to crate-mounted flash ADC's. 7 m apart An RS-422 link provides digital configuration downloading and read back, and supplies the calibration strobe. The 24.6 cm x 9.5 cm board dissipates 8.5 W.

  9. Radiation-tolerant 50MHz bulk CMOS VLSI circuits utilizing radiation-hard structure NMOS transistors

    SciTech Connect

    Hatano, H.; Takatsuka

    1986-10-01

    A radiation-tolerant, high speed, bulk CMOS VLSI circuit design, utilizing a new NMOS structure, has been investigated, based on ..gamma..-ray irradiation experimental results for 2 ..mu..m shift registers. By utilizing 60-bit clocked gate and transfer gate static shift register circuits, the usefulness of radiation-hard NMOS structure and circuit design parameter optimization has been confirmed experimentally, showing 50 MHZ operation CMOS circuits at 5 V supply voltage after 1 x 10/sup 5/ rads (Si) irradiation. The limitations of dynamic circuits in radiation-tolerant circuit designs have also been shown, using 120-bit dynamic shift register circuits. Based on the above results, radiation-tolerant, high-performance, bulk CMOS VLSI circuit designs are discussed.

  10. Charge collection imaging of a monolithic DeltaE-E telescope for radiation protection applications.

    PubMed

    Cornelius, I; Rosenfeld, A; Reinhard, M; Fazzi, A; Prokopovich, D; Wroe, A; Siegele, R; Pola, A; Agosteo, S

    2006-01-01

    The development of microdosimeters and particle telescopes is important for risk assessment in space and aviation applications. The charge collection properties of a monolithic particle telescope, suitable for both microdosimetry and fluence based approaches, were studied using an ion microprobe. PMID:17251252

  11. Effect of gamma radiation on micromechanical hardness of lead-free solder joint

    SciTech Connect

    Paulus, Wilfred; Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu; Yusoff, Wan Yusmawati Wan

    2015-09-25

    Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

  12. Influence of design variables on radiation hardness of silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

    1985-01-01

    Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

  13. Comparison of the radiation hardness of various VLSI technologies for defense applications

    SciTech Connect

    Gibbon, C.F.

    1985-01-01

    In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.

  14. Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

    SciTech Connect

    Cerjan, C.J.; Sigmon, T.W.

    2000-02-15

    The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

  15. Radiation hard analog circuits for ALICE ITS upgrade

    NASA Astrophysics Data System (ADS)

    Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

    2016-03-01

    The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

  16. Effect Of Clock Mode On Radiation Hardness Of An ADC

    NASA Technical Reports Server (NTRS)

    Lee, Choon I.; Rax, Bernie G.; Johnston, Allan H.

    1995-01-01

    Report discusses techniques for testing and evaluating effects of total dosages of ionizing radiation on performances of high-resolution successive-approximation analog-to-digital converters (ADCs), without having to test each individual bit or transition. Reduces cost of testing by reducing tests to few critical parametric measurements, from which one determines approximate radiation failure levels providing good approximations of responses of converters for purpose of total-dose-radiation evaluations.

  17. The effect of heavy metal contamination in SIMOX on radiation hardness of MOS transistors

    NASA Astrophysics Data System (ADS)

    Ipri, Alfred C.; Jastrzebski, L.; Peters, D.

    1989-12-01

    It is shown that heavy-metal contamination introduced during implantation of oxygen into silicon results in a reduction of SIMOX (separation by implanted oxygen) oxide radiation hardness. Radiation-induced back-channel leakage currents in MOS transistors processed in SIMOX films containing various levels of heavy metals, as measured by surface photovoltage (SPV), are a strong function of heavy metal concentration. It is concluded that SPV measurements of as-implanted SIMOX wafers can be used as a rapid nondestructive quality control inspection technique to predict the radiation hardness of the SIMOX oxide prior to processing.

  18. Radiation hardness by design for mixed signal infrared readout circuit applications

    NASA Astrophysics Data System (ADS)

    Gaalema, Stephen; Gates, James; Dobyns, David; Pauls, Greg; Wall, Bruce

    2013-09-01

    Readout integrated circuits (ROICs) to support space-based infrared detection applications often have severe radiation tolerance requirements. Radiation hardness-by-design (RHBD) significantly enhances the radiation tolerance of commercially available CMOS and custom radiation hardened fabrication techniques are not required. The combination of application specific design techniques, enclosed gate architecture nFETs and intrinsic thin oxide radiation hardness of 180 nm process node commercial CMOS allows realization of high performance mixed signal circuits. Black Forest Engineering has used RHBD techniques to develop ROICs with integrated A/D conversion that operate over a wide range of temperatures (40K-300K) to support infrared detection. ROIC radiation tolerance capability for 256x256 LWIR area arrays and 1x128 thermopile linear arrays is presented. The use of 130 nm CMOS for future ROIC RHBD applications is discussed.

  19. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  20. A radiation-hard, low-background multiplexer design for spacecraft imager applications

    NASA Astrophysics Data System (ADS)

    Staller, Craig; Ramirez, Luis; Niblack, Curtiss; Blessinger, Michael; Kleinhans, William

    1992-07-01

    A possible multiplexer design for the focal plane for the Cassini Visible and Infrared Mapping Spectrometer (VIMS) is reviewed. The instrument's requirements for the multiplexed array are summarized. The VIMS instrument has a modest radiation-hardness requirement due to the trajectory and planetary environments in which the instrument will be required to operate. The total ionizing dose hardness requirement is a few tens of kilorads. A thin-gate oxide of a few hundred angstroms thickness is to be used. Field hardness is to be achieved by guard bands or hardened dielectric isolation. The design is argued to meet the low-noise and radiation-hardness required for imaging at Saturn. The design is versatile enough to provide double-correlated and double-uncorrelated sampling, which is accomplished in the signal processing electronics outside the focal plane.

  1. Radiation hardness of Efratom M-100 rubidium frequency standard

    NASA Technical Reports Server (NTRS)

    English, T. C.; Vorwerk, H.; Rudie, N. J.

    1983-01-01

    The effects of nuclear radiation on rubidium gas cell frequency standards and components are presented, including the results of recent tests where a continuously operating rubidium frequency standard (Effratom, Model M-100) was subjected to simultaneous neutron/gamma radiation. At the highest neutron fluence 7.5 10 to the 12th power n/sq cm and total dose 11 krad(Si) tested, the unit operated satisfactorily; the total frequency change over the 2 1/2 hour test period due to all causes, including repeated retraction from and insertion into the reactor, was less than 1 x 10 to the -10th power. The effects of combined neutron/gamma radiation on rubidium frequency standard physics package components were also studied, and the results are presented.

  2. Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

    SciTech Connect

    Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

    2006-08-15

    We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering.

  3. Test of radiation hardness of CMOS transistors under neutron irradiation

    SciTech Connect

    Sadrozinski, H.F.W.; Rowe, W.A.; Seiden, A.; Spencer, E.; Hoffman, C.M.; Holtkamp, D.; Kinnison, W.W.; Sommer, W.F. Jr.; Ziock, H.J.

    1989-01-01

    We have tested 2 micron CMOS test structures from various foundries in the LAMPF Beam stop for radiation damage under prolongued neutron irradiation. The fluxes employed covered the region expected to be encountered at the SSC and led to fluences of up to 10/sup 14/ neutrons/cm/sup 2/ in about 500 hrs of running. We show that test structures which have been measured to survive ionizing radiation of the order MRad also survive these high neutron fluences. 5 refs., 4 figs.

  4. Gamma-ray radiation response at 1550 nm of fluorine-doped radiation hard single-mode optical fiber.

    PubMed

    Kim, Youngwoong; Ju, Seongmin; Jeong, Seongmook; Lee, Seung Ho; Han, Won-Taek

    2016-02-22

    We have investigated gamma-ray radiation response at 1550 nm of fluorine-doped radiation hard single-mode optical fiber. Radiation-induced attenuation (RIA) of the optical fiber was measured under intermittent gamma-ray irradiations with dose rate of ~10 kGy/h. No radiation hardening effect on the RIA by the gamma-ray pre-dose was found when the exposed fiber was bleached for long periods of time (27~47 days) at room-temperature. Photo-bleaching scheme upon 980 nm LD pumping has proven to be an effective deterrent to the RIA, particularly by suppressing the incipient RIA due to room-temperature unstable self-trapped hole defects (STHs). Large temperature dependence of the RIA of the optical fiber together with the photo-bleaching effect are worthy of note for reinforcing its radiation hard characteristics. PMID:26907044

  5. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project.

    NASA Astrophysics Data System (ADS)

    Huffman, B. T.; Affolder, A.; Arndt, K.; Bates, R.; Benoit, M.; Di Bello, F.; Blue, A.; Bortoletto, D.; Buckland, M.; Buttar, C.; Caragiulo, P.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hoeferkamp, M.; Hommels, L. B. A.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, J.; Liang, Z.; Mandić, I.; Maneuski, D.; Martinez-Mckinney, F.; McMahon, S.; Meng, L.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Perić, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seidel, S.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zhang, J.; Zhu, H.

    2016-02-01

    The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with the AMS H35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

  6. FPIX2: A radiation-hard pixel readout chip for BTeV

    SciTech Connect

    David C. Christian et al.

    2000-12-11

    A radiation-hard pixel readout chip, FPIX2, is being developed at Fermilab for the recently approved BTeV experiment. Although designed for BTeV, this chip should also be appropriate for use by CDF and DZero. A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned. The results of initial tests of prototype 0.25{micro} CMOS devices are presented, as are plans for the balance of the development effort.

  7. Radiation Hard Sensors for the BeamCal of the ILC

    NASA Astrophysics Data System (ADS)

    Grah, C.

    2008-06-01

    BeamCal is an electromagnetic sampling calorimeter in the very forward region of the detectors at the ILC. BeamCal will be hit by a large fraction of electron-positron pairs stemming from beamstrahlung. The sensors used for BeamCal have to withstand very high levels of total ionizing dose. We report on the investigations of radiation hard sensor materials for BeamCal of the FCAL collaboration. Artificial diamond, radiation hard silicon, SiC and GaAs sensors are under consideration. Static measurements of the current-voltage characteristics, response to minimum ionizing particles and test beam measurements are part of our investigations.

  8. Study of radiation hardness of pure CsI crystals for Belle-II calorimeter

    NASA Astrophysics Data System (ADS)

    Boyarintsev, A.; Boyarintseva, Y.; Gektin, A.; Shiran, N.; Shlyakhturov, V.; Taranyuk, V.; Timoshenko, N.; Bobrov, A.; Garmash, A.; Golkovski, M.; Kuzmin, A.; Matvienko, D.; Savrovski, P.; Shebalin, V.; Shwartz, B.; Vinokurova, A.; Vorobyev, V.; Zhilich, V.; Krumshtein, Z. V.; Nozdrin, A. A.; Olshevsky, A. G.

    2016-03-01

    A study of the radiation hardness of pure CsI crystals 30 cm long was performed with a uniformly absorbed dose of up to 14.3 krad. This study was initiated by the proposed upgrade of the end cap calorimeter of the Belle-II detector, using pure CsI crystals. A set of 14 crystals of truncated pyramid shape used in this study was produced at the Institute for Scintillation Materials NAS from 14 different ingots grown with variations of the growing technology. Interrelationship of crystal scintillation characteristics, radiation hardness and the growing technology was observed.

  9. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  10. Hierarchical radioscopy using polychromatic and partially coherent hard synchrotron radiation.

    PubMed

    Rack, Alexander; García-Moreno, Francisco; Helfen, Lukas; Mukherjee, Manas; Jiménez, Catalina; Rack, Tatjana; Cloetens, Peter; Banhart, John

    2013-11-20

    Pushing synchrotron x-ray radiography to increasingly higher image-acquisition rates (currently up to 100,000 fps) while maintaining spatial resolutions in the micrometer range implies drastically reduced fields of view. As a consequence, either imaging a small subregion of the sample with high spatial resolution or only the complete specimen with moderate resolution is applicable. We introduce a concept to overcome this limitation by making use of a semi-transparent x-ray detector positioned close to the investigated sample. The hard x-rays that pass through the sample either create an image on the first detector or keep on propagating until they are captured by a second x-ray detector located further downstream. In this way, a process can be imaged simultaneously in a hierarchical manner within a single exposure and a projection of the complete object with moderate resolution as well as a subregion with high resolution are obtained. As a proof-of-concept experiment, image sequences of an evolving liquid-metal foam are shown, employing frame rates of 1000  images/s (1.2 μm pixel size) and 15,000  images/s (18.1 μm pixel size) for the first and second detector, respectively. PMID:24513767

  11. Radiation-hard silicon gate bulk CMOS cell family

    SciTech Connect

    Gibbon, C. F.; Habing, D. H.; Flores, R. S.

    1980-01-01

    A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved.

  12. Radiation hardness of n-GaN schottky diodes

    SciTech Connect

    Lebedev, A. A. Belov, S. V.; Mynbaeva, M. G.; Strel’chuk, A. M.; Bogdanova, E. V.; Makarov, Yu. N.; Usikov, A. S.; Kurin, S. Yu.; Barash, I. S.; Roenkov, A. D.; Kozlovski, V. V.

    2015-10-15

    Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

  13. Equivalent circuit analysis of radiative coupling in monolithic tandem solar cells

    SciTech Connect

    Lan, Dongchen E-mail: d.lan@unswalumni.com; Green, Martin A.

    2015-06-29

    As solar cell efficiency improves towards the Shockley-Queisser limit, so does the radiative efficiency of the cell. For tandem stacks of cells where energy conversion efficiency now exceeds 46%, radiative coupling between the cells is becoming increasingly important to consider in cell design, measurement, and performance prediction. We show how an equivalent circuit model can capture the complex radiative interactions between cells in such tandem stacks, allowing more insight into the impact on cell performance. The circuit's use is demonstrated by deriving results relevant to the critical step of eliminating coupling effects from measured cell spectral responses.

  14. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  15. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  16. Radiation hardness of 3HF-tile/O2-WLS-fiber calorimeter

    SciTech Connect

    Han, S.W.; Hu, L.D.; Liu, N.Z.

    1993-11-01

    The radiation hardness of a 3HF-tile/O2-WLS-fiber calorimeter with two different tile/fiber patterns has been studied. Two calorimeter modules were irradiated up to 10 Mrad with the BEPC 1.3 GeV electron beam. The radiation damage of these modules is compared with our previous measurements from SCSN81-tile/BCF91A-WLS-fiber modules. The longitudinal damage profiles are fitted as a function of depth.

  17. Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

    NASA Technical Reports Server (NTRS)

    Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

    2015-01-01

    Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.

  18. Irradiation facility at the IBR-2 reactor for investigation of material radiation hardness

    NASA Astrophysics Data System (ADS)

    Bulavin, M.; Cheplakov, A.; Kukhtin, V.; Kulagin, E.; Kulikov, S.; Shabalin, E.; Verkhoglyadov, A.

    2015-01-01

    Description of the irradiation facility and available parameters of the neutron and gamma exposures including the maximal integrated doses are presented in the paper. The research capabilities for radiation hardness tests of materials in high intensity beam of fast neutrons at the IBR-2 reactor of the Joint Institute for Nuclear Research in Dubna (Russia) are outlined.

  19. Irradiation facility at the IBR-2 reactor for investigating material radiation hardness

    NASA Astrophysics Data System (ADS)

    Bulavin, M. V.; Verkhoglyadov, A. E.; Kulikov, S. A.; Kulagin, E. N.; Kukhtin, V. V.; Cheplakov, A. P.; Shabalin, E. P.

    2015-03-01

    A description of the irradiation facility and available parameters of neutron and gamma exposures, including the maximum integrated doses, are presented in the paper. The research capabilities for radiation hardness tests of materials in a high-intensity beam of fast neutrons at the IBR-2 reactor of the Joint Institute for Nuclear Research in Dubna (Russia) are outlined.

  20. Creation of a Radiation Hard 0.13 Micron CMOS Library at IHP

    NASA Astrophysics Data System (ADS)

    Jagdhold, U.

    2010-08-01

    To support space applications we will develop an 0.13 micron CMOS library which should be radiation hard up to 200 krad. By introducing new radiation hard design rules we will minimize IC-level leakage and single event latchup (SEL). To reduce single event upset (SEU) we will add two p-MOS transistors to all flip flops. For reliability reasons we will use double contacts in all library elements. The additional rules and the library elements will then be integrated in our Cadence mixed signal designkit, Virtuoso IC6.1 [1]. A test chip will be produced with our in house 0.13 micron BiCMOS technology, see Ref. [2].Thereafter we will doing radiation tests according the ESA specifications, see Ref. [3], [4].

  1. Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

    NASA Astrophysics Data System (ADS)

    Cojocariu, L. N.; Placinta, V. M.; Dumitru, L.

    2016-03-01

    A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

  2. Radiation-hard power electronics for the ATLAS New Small Wheel

    NASA Astrophysics Data System (ADS)

    Ameel, J.; Amidei, D.; Baccaro, S.; Citterio, M.; Cova, P.; Delmonte, N.; Sekhon Edgar, K.; Edgar, R.; Fiore, S.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Yang, Y.

    2015-01-01

    The New Small Wheel (NSW) is an upgrade for the ATLAS detector to provide enhanced triggering and reconstruction of muons in the forward region. The large LV power demands of the NSW necessitate a point-of-load architecture with on-detector power conversion. The radiation load and magnetic field of this environment, while significant, are nevertheless still in the range where commercial-off-the-shelf power devices may suffice. We present studies on the radiation-hardness and magnetic-field tolerance of several candidate buck converters and linear regulators. Device survival and performance are characterized when exposed to gamma radiation, neutrons, protons and magnetic fields.

  3. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  4. Microprocessing of human hard tooth tissues surface by mid-infrared erbium lasers radiation

    NASA Astrophysics Data System (ADS)

    Belikov, Andrey V.; Shatilova, Ksenia V.; Skrypnik, Alexei V.

    2015-03-01

    A new method of hard tooth tissues laser treatment is described. The method consists in formation of regular microdefects on tissue surface by mid-infrared erbium laser radiation with propagation ratio M2<2 (Er-laser microprocessing). Proposed method was used for preparation of hard tooth tissues surface before filling for improvement of bond strength between tissues surface and restorative materials, microleakage reduction between tissues surface and restorative materials, and for caries prevention as a result of increasing microhardness and acid resistance of tooth enamel.

  5. Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass

    NASA Astrophysics Data System (ADS)

    Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

    1999-01-01

    The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kWe, 1 MWe, and 10 MWe) for near term technology (i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

  6. Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

    NASA Technical Reports Server (NTRS)

    Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

    1998-01-01

    The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

  7. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    SciTech Connect

    Rasouli, C.; Pourshahab, B.; Rasouli, H.; Hosseini Pooya, S. M.; Orouji, T.

    2014-05-15

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  8. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    NASA Astrophysics Data System (ADS)

    Rasouli, C.; Pourshahab, B.; Hosseini Pooya, S. M.; Orouji, T.; Rasouli, H.

    2014-05-01

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points - three TLDs per point - to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  9. Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS

    SciTech Connect

    Nordstrom, T.V.; Gibbon, C.F.

    1981-01-01

    Significant improvements have been made in the radiation hardness of silicon-gate CMOS by reducing the gate oxide thickness. The device studied is an 8-bit arithmetic logic unit designed with Sandia's Expanded Linear Array (ELA) standard cells. Devices with gate oxide thicknesses of 400, 570 (standard), and 700 A were fabricated. Irradiations were done at a dose rate of 2 x 10/sup 6/ rads (Si) per hour. N- and P-channel maximum threshold shifts were reduced by 0.3 and 1.2 volts, respectively, for the thinnest oxide. Approximately, a linear relationship is found for threshold shift versus thickness. The functional radiation hardness of the full integrated circuit was also measured.

  10. FPIX2: a radiation-hard pixel readout chip for BTeV

    NASA Astrophysics Data System (ADS)

    Christian, D. C.; Appel, J. A.; Cancelo, G.; Hoff, J.; Kwan, S.; Mekkaoui, A.; Yarema, R.; Wester, W.; Zimmermann, S.

    2001-11-01

    A radiation-hard pixel readout chip, FPIX2, is being developed at Fermilab for the recently approved BTeV experiment [A. Kulyavtsev, et al., Proposal for an Experiment to Measure Mixing, CP Violation and Rare Decays in Charm and Beauty Particle Decays at the Fermilab Collider (2000), http://www-btev.fnal.gov/public_documents/btev_proposal/]. Although designed for BTeV, this chip should also be appropriate for use by CDF and DZero. A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned. The results (including the effects of irradiation to ˜33 Mrad) of initial tests of prototype 0.25 μm CMOS devices are presented, as are plans for the balance of the development effort.

  11. A Radiation-Hard Analog Memory In The AVLSI-RA Process

    SciTech Connect

    Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G., Kennedy, E.J., Smith, R.S., Swann, B.K.; Musser, J.A.

    1995-12-31

    A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

  12. 22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders

    SciTech Connect

    Seidel, Sally

    2013-05-06

    The 22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders was held on the campus of the University of New Mexico from June 3 to 5, 2013. This was the first North American meeting of the series going back to 2001. The sessions covered Material and Defect Characterization, Detector Characterization, Full Detector Systems, and New Structures. A half-day mini-workshop was allocated to radiation damage at LHC experiments. All talks are archived permanently available to the public at rd50.web.cern.ch. Financial support was used for room rental audiovisual equipment rental, and document preparation services.

  13. HTLT oxygenated silicon detectors: radiation hardness and long-term stability

    NASA Astrophysics Data System (ADS)

    Li, Z.; Dezillie, B.; Bruzzi, M.; Chen, W.; Eremin, V.; Verbitskaya, E.; Weilhammer, P.

    2001-04-01

    Silicon detectors fabricated by BNLs high-temperature, long time (HTLT) oxidation technology have been characterized using various techniques for material/detector properties and radiation hardness with respect to gamma, proton and neutron irradiation. It has been found that a uniform oxygen distribution with a concentration of 4×10 17/cm 3 has been achieved in high-resistivity FZ silicon with our HTLT technology. With the standard HTLT technology, the original high resistivity of FZ silicon will be retained. However, the controlled introduction of thermal donors (TD) with a concentration higher than the original shallow doping impurity can be achieved with a process slightly altered from the standard HTLT technology (HTLT-TD). Detectors made by both technologies (HTLT and HTLT-TD) have been found to be advantageous in radiation hardness to gamma and proton irradiation, in terms of detector full depletion voltage degradation, as compared to the control samples. In fact, these detectors are insensitive to gamma irradiation up to 600 Mrad and more tolerant by at least a factor of two to proton irradiation and the following reverse annealing. However, there is little improvement in radiation hardness to neutron irradiation, which has been attributed to the nature of neutron-induced damage that is dominated by extended defects or defect clusters. Microscopic measurements (I-DLTS) have also been made on control and HTLT samples and will be compared and presented.

  14. The ESA RADGLASS activity: a radiation study of non rad-hard glasses

    NASA Astrophysics Data System (ADS)

    Manolis, Ilias; Bézy, Jean-Loup; Costantino, Alessandra; Vink, Ramon; Deep, Atul; Ahmad, Munadi; Amorim, Emmanuel; Miranda, Micael D.; Meynart, Roland

    2015-10-01

    Only a small set of radiation hardened optical glasses are currently offered in the market, thus drastically limiting the optical design choices available to the engineers at the early phases of an instrument development. Furthermore, availability of those glasses cannot be easily guaranteed for the long term horizon of future space instrument developments. Radiation tests on conventional glasses on the other hand have shown significant sensitivity to high radiation levels but such levels are not necessarily representative of typical low Earth (LEO) orbits. We have conducted irradiation campaigns on several different types of conventional, non-radiation hard glasses, selected from the wider pool of the Schott "new" arsenic and lead free series (N-*) and characterized their spectral transmission properties before and after ionizing dose deposition. We report our first findings here.

  15. Satellite project "CORONAS-PHOTON" for study of solar hard radiation

    NASA Astrophysics Data System (ADS)

    Kotov, Yu.; Cor-Phot Team

    "CORONAS-PHOTON" is the Russian mission for study of the solar hard electromagnetic radiation in the very wide energy range from Extreme UV up to high-energy gamma - radiation. GOAL OF PROJECT: The investigation of energy accumulation and its transformation into energy of accelerated particles processes during solar flares; the study of the acceleration mechanisms, propagation and interaction of fast particles in the solar atmosphere; the study of the solar activity correlation with physical-chemical processes in the Earth upper atmosphere. SCIENTIFIC PAYLOAD CAPABILITY Radiation / Energy region / Detector type: Full solar disk X- radiation / 2keV - 2000MeV / Prop. counter; NaI(Tl); Full solar disk X- and γ-radiation / NaI(Tl)/CsI(Na) phoswich; Full solar disk X- and γ-radiation and solar neutrons / 20 - 300MeV / YalO_3(Ce); CsI(Tl); Hard X-ray polarization in large flares / 20 - 150keV / p-terphenyl scatterer and CsI(Na) absorbers; Full solar disk EUV-radiation monitoring / 6 spectral windows in <10 - 130nm / Filtered photodiodes; Solar images in narrow spectral bands and monochromatic emission lines of hot plasma / Emission of HeII, SiXI, FeXXI, FeXXIII, MgXII ions / Multi-layer and Bregg spherical crystal quartz mirrors with CCDs; Additionally, the temporal and energy spectra of electrons (0.2-14MeV), protons (1-61MeV) and nuclei (Z<26, 2-50MeV/nuclon) at the satellite orbit will be registrated by several instruments. MAIN CHARACTERISTICS OF SPACECRAFT: Spacecraft weight: 1900 kg; Orbit type: Circular; Scientific payload weight: 540 kg; Height: 500 km; Orientation to the Sun [arc min]: better 5; Inclination: 82.5 degree; Instability of orientation [deg/s]: less 0.005; Solar - synchronous orbit is under study. Launching date of "CORONAS-PHOTON" spacecraft is 2006.

  16. Results of radiation hardness tests and performance tests of the HS9008RH flash ADC

    SciTech Connect

    Nutter, S.; Tarle, G. . Physics Dept.); Crawley, H.B.; McKay, R.; Meyer, W.T.; Rosenberg, E.I.; Thomas, W.D. . Dept. of Physics and Astronomy Ames Lab., IA )

    1994-08-01

    Results from tests characterizing the performance and radiation hardness of the HS9008RH flash analog to digital converter (FADC) are presented. These tests were performed primarily to evaluate the suitability of this device for use in the GEM Central Tracker at the SSC experiment. Basic performance characteristics and susceptibility of these characteristics to radiation were examined. Performance test results indicate that the device integral nonlinearity is sampling rate dependent and worsens rapidly above rate of 15 megasamples per second (MSPS). No degradation in performance of the device was observed after its exposure of up to 81 Mrad of 1.25 MeV [gamma] radiation from a [sup 60]Co source. Exposure of the device to a reactor fast neutron fluence (E > 100keV) of 5 [times] 10[sup 14]/cm[sup 2] resulted in no significant observed performance degradation as well.

  17. Dose Rate Effects on Damage and Recovery of Radiation Hard Glass Under Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Menchini, Francesca; Baccaro, Stefania; Cemmi, Alessia; di Sarcina, Ilaria; Fiore, Salvatore; Piegari, Angela

    2014-06-01

    Optical systems employed in space missions are subjected to high fluxes of energetic particles. Their optical properties should be stable throughout the whole mission, to avoid a possible failure of the experiments. Radiation hard glasses are widely used as substrates or windows in high-energy applications, due to their resistance in hostile environments where energetic particles and γ rays are present. In this work we have irradiated radiation resistant glass windows by γ rays from a 60Co source at several doses, from 50 to 3×l05 Gy, and at two different dose rates. The optical properties of the samples have been monitored and the effects of radiations have been measured. Moreover, a partial recovery of the damage has been observed after the end of irradiation. The effects depend on the irradiation dose rate.

  18. On the nature of the sources of hard pulse X-ray radiation

    NASA Technical Reports Server (NTRS)

    Shklovskiy, I. S.

    1978-01-01

    Besides the identified sources of cosmic pulse X-ray radiation with globular clusters NGC 6624, NGC 1851 and MXB 1730-335 several new identifications were made. The source in Norma was probably identified with globular cluster NGC 5927, the source in Aquila with globular cluster NGC 6838 (M71), and the source in Puppis with globular cluster NGC 2298. Gamma pulses discovered by the Vela satellites and X-ray pulses thoroughly measured by the SAS-3, Ariel-5, and ANS satellites are thought to be the same phenomenon. The sources of such a radiation must be some kind of peculiarity at the central part of globular clusters; it is most probably a massive black hole. The sources of hard pulse radiation which cannot be identified with globular clusters are considered to be a new kind of galactic object, invisible globular clusters, which are naked nuclei of globular clusters.

  19. Radiation Hardness Tests of SiPMs for the JLab Hall D Barrel Calorimeter

    SciTech Connect

    Yi Qiang, Carl Zorn, Fernando Barbosa, Elton Smith

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed

  20. Radiation-hard active CMOS pixel sensors for HL-LHC detector upgrades

    NASA Astrophysics Data System (ADS)

    Backhaus, Malte

    2015-02-01

    The luminosity of the Large Hadron Collider (LHC) will be increased during the Long Shutdown of 2022 and 2023 (LS3) in order to increase the sensitivity of its experiments. A completely new inner detector for the ATLAS experiment needs to be developed to withstand the extremely harsh environment of the upgraded, so-called High-Luminosity LHC (HL-LHC). High radiation hardness as well as granularity is mandatory to cope with the requirements in terms of radiation damage as well as particle occupancy. A new silicon detector concept that uses commercial high voltage and/or high resistivity full complementary metal-oxide-semiconductor (CMOS) processes as active sensor for pixel and/or strip layers has risen high attention, because it potentially provides high radiation hardness and granularity and at the same time reduced price due to the commercial processing and possibly relaxed requirements for the hybridization technique. Results on the first prototypes characterized in a variety of laboratory as well as test beam environments are presented.

  1. Development of radiation-hard optical links for the CMS tracker at CERN

    SciTech Connect

    Vasey, F.; Arbet-Engels, V.; Cervelli, G.; Gill, K.; Grabit, R.; Mommaert, C.; Stefanini, G.; Batten, J.; Troska, J.

    1998-06-01

    A radiation-hard optical link is under development for readout and control of the tracking detector in the future CMS experiment at the CERN Large Hadron Collider. The authors present the optical system architecture based on edge-emitting InGaAsP laser-diode transmitters operating at a wavelength of 1.3 {micro}m, single mode fiber ribbons, multi-way connectors and InGaAsP in photodiode receivers. They report on radiation hardness tests of lasers, photodiodes, fibers and connectors. Increases of laser threshold and pin leakage currents with hadron fluence have been observed together with decreases in laser slope-efficiency and photodiode responsivity. Short lengths of single-mode optical fiber and multi-way connectors have been found to be little affected by radiation damage. They analyze the analog and digital performance of prototype optical links transmitting data generated at a 40 MSample/s rate. Distortion, settling time, bandwidth, noise, dynamic range and bit-error-rate results are discussed.

  2. The impact of morphology upon the radiation hardness of ZnO layers.

    PubMed

    Burlacu, A; Ursaki, V V; Skuratov, V A; Lincot, D; Pauporte, T; Elbelghiti, H; Rusu, E V; Tiginyanu, I M

    2008-05-28

    It is shown that ZnO nanorods and nanodots grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe(23+) irradiation at a dose of 1.5 × 10(14) cm(-2) in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10(12) cm(-2) in bulk layers. The damage introduced by irradiation is shown to change the nature of electronic transitions responsible for luminescence. The change of excitonic luminescence to the luminescence related to the tailing of the density of states caused by potential fluctuations occurs at an irradiation dose around 1 × 10(14) cm(-2) and 5 × 10(12) cm(-2) in nanorods and bulk layers, respectively. More than one order of magnitude enhancement of radiation hardness of ZnO nanorods grown by MOCVD as compared to bulk layers is also confirmed by the analysis of the near-bandgap photoluminescence band broadening and the behavior of resonant Raman scattering lines. The resonant Raman scattering analysis demonstrates that ZnO nanostructures are more radiation-hard as compared to nanostructured GaN layers. High energy heavy ion irradiation followed by thermal annealing is shown to be a way for the improvement of the quality of ZnO nanorods grown by electrodeposition and chemical bath deposition. PMID:21730593

  3. Radiation hardness tests of GaAs amplifiers operated in liquid argon in the ATLAS calorimeter

    NASA Astrophysics Data System (ADS)

    Ban, J.; Brettel, H.; Cheplakov, A.; Cwienk, W.; Fent, J.; Golikov, V.; Golubyh, S.; Jakobs, K.; Kukhtin, V.; Kulagin, E.; Kurchaninov, L.; Ladygin, E.; Luschikov, V.; Oberlack, H.; Obudovsky, V.; Schacht, P.; Shalyugin, A.; Stiegler, U.; Zweimüller, T.

    2008-09-01

    Highly integrated Gallium Arsenide (GaAs) chips of preamplifiers and summing amplifiers have been exposed to high fluence of fast neutrons and γ-dose at the IBR-2 reactor in Dubna. A stable performance of the electronics has been demonstrated up to a fluence of 5×1014 n cm-2 and a γ-dose of 55 kGy. The radiation hardness tests confirm the applicability of the preamplifiers for more than 10 years operation in the ATLAS hadronic end-cap calorimeter at LHC.

  4. Radiation hardness of plastic scintillating fiber against fast neutron and [gamma]-ray irradiation

    SciTech Connect

    Murakami, Akira; Yoshinaka, Hideki; Goto, Minehiko . Dept. of Physics)

    1993-08-01

    In future collider experiments, where a background radiation level is estimated to be very high, e.g. around 10[sup 2] [approximately] 10[sup 5] Gy/yr and 10[sup 11] [approximately] 10[sup 14] n/cm[sup 2]/yr at SSC, the detectors operating around the collision point in the experiments will encounter a considerable amount of radiation. Therefore, the detectors, especially the calorimeter, are required to be resistive against high radiation levels. From this point of view, it is of great importance to study the effects of radiation damage on the performance of the detectors. The authors report preliminary results of measurements of radiation hardness of the plastic scintillating fiber Kuraray SCSF-81 against irradiation with fast neutrons and [sup 60]Co [gamma]-rays in the region of the neutron fluence from 1 [times] 10[sup 11] to 5 [times] 10[sup 13] n/cm[sup 2] and the integrated [gamma]-ray dose from 890 to 10[sup 5] Gy, respectively. Deterioration of both intrinsic light yield and light transmittance of the SCSF-81 has been studied.

  5. Study of radiation hardness of Gd2SiO5 scintillator for heavy ion beam

    NASA Astrophysics Data System (ADS)

    Kawade, K.; Fukatsu, K.; Itow, Y.; Masuda, K.; Murakami, T.; Sako, T.; Suzuki, K.; Suzuki, T.; Taki, K.

    2011-09-01

    Gd2SiO5 (GSO) scintillator has very excellent radiation resistance, a fast decay time and a large light yield. Because of these features, GSO scintillator is a suitable material for high radiation environment experiments such as those encountered at high energy accelerators. The radiation hardness of GSO has been measured with Carbon ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC). During two nights of irradiation the GSO received a total radiation dose of 7 × 105 Gy and no decrease of light yield was observed. On the other hand an increase of light yield by 25% was observed. The increase is proportional to the total dose, increasing at a rate of 0.025%/Gy and saturating at around 1 kGy. Recovery to the initial light yield was also observed during the day between two nights of radiation exposure. The recovery was observed to have a slow exponential time constant of approximately 1.5 × 104 seconds together with a faster component. In case of the LHCf experiment, a very forward region experiment on LHC (pseudo-rapidity η > 8.4), the irradiation dose is expected to be approximately 100 Gy for 10 nb-1 of data taking at (s)1/2 = 14TeV. The expected increase in light yield of less than a few percent will not affect the LHCf measurement.

  6. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  7. A PCI Express optical link based on low-cost transceivers qualified for radiation hardness

    NASA Astrophysics Data System (ADS)

    Triossi, A.; Barrientos, D.; Bellato, M.; Bortolato, D.; Isocrate, R.; Rampazzo, G.; Ventura, S.

    2013-02-01

    In this paper we want to demonstrate that an optical physical medium is compatible with the second generation of PCI Express. The benefit introduced by the optical decoupling of a PCI Express endpoint is twofold: it allows for a geographical detachment of the device and it remains compliant with the usual PCI accesses to the legacy I/O and memory spaces. We propose two boards that can bridge the PCI Express protocol over optical fiber. The first is a simple optical translator while the second is a more robust switch developed for connecting up to four devices to a single host. Such adapters are already working in the control and data acquisition system of a particle detector at CERN and hence they had been qualified for radiation hardness. The positive outcomes of the radiation tests of four types of off-the-shelf transceivers are finally reported.

  8. Foreign technology assessment: Environmental evaluation of a radiation-hard oscillator/divider

    NASA Astrophysics Data System (ADS)

    Dvorack, M. A.

    1993-03-01

    Salford Electrical Instruments, Ltd., and the General Electric Company's Hirst Research Center, under contract to the United Kingdom's (UK) Ministry of Defence, developed a radiation-hard, leadless chip-carrier-packaged oscillator/divider. Two preproduction clocks brought to Sandia National Laboratories (SNL) by a potential SNL customer underwent mechanical and thermal environmental evaluation. Because of the subsequent failure of one device and the deteriorating condition of another device, the devices were not subjected to radiation tests. The specifics of the environmental evaluation performed on these two clocks and the postmortem analysis of one unit, which ultimately failed, are described. Clock startup time versus temperature studies were also performed and compared to an SNL-designed clock having the same fundamental frequency.

  9. Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities

    NASA Astrophysics Data System (ADS)

    Betancourt, Christopher; Fadeyev, Vitaliy; Sadrozinski, Hartmut F.; Wright, John

    2010-09-01

    The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is much larger than typical fluences in space, but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface treatment), novel detector designs (3D, edge-less, interconnects).

  10. The role of radiation hard solar cells in minimizing the costs of global satellite communications systems

    NASA Astrophysics Data System (ADS)

    Summers, Geoffrey P.; Walters, Robert J.; Messenger, Scott R.; Burke, Edward A.

    1995-10-01

    An analysis embodied in a PC computer program is presented which quantitatively demonstrates how the availability of radiation hard solar cells can minimize the cost of a global satellite communication system. The chief distinction between the currently proposed systems, such as Iridium Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation within the earth's radiation belts can reduce the total system cost by as much as a factor of two, so long as radiation hard components including solar cells, can be used. A detailed evaluation of several types of planar solar cells is given, including commercially available Si and GaAs/Ge cells, and InP/Si cells which are under development. The computer program calculates the end of life (EOL) power density of solar arrays taking into account the cell geometry, coverglass thickness, support frame, electrical interconnects, etc. The EOL power density can be determined for any altitude from low earth orbit (LEO) to geosynchronous (GEO) and for equatorial to polar planes of inclination. The mission duration can be varied over the entire range planned for the proposed satellite systems. An algorithm is included in the program for determining the degradation of cell efficiency for different cell technologies due to proton and electron irradiation. The program can be used to determine the optimum configuration for any cell technology for a particular orbit and for a specified mission life. Several examples of applying the program are presented, in which it is shown that the EOL power density of different technologies can vary by an order of magnitude for certain missions. Therefore, although a relatively radiation soft technology can be made to provide the required EOL power by simply increasing the size of the array, the impact on the total system budget could be unacceptable, due to increased launch and

  11. Development of radiation hard electron monitor RADEM for ESA JUICE mission

    NASA Astrophysics Data System (ADS)

    Hajdas, Wojtek; Desorgher, Laurent; Goncalves, Patricia; Pinto, Costa; Marques, Arlindo; Maehlum, Gunnar; Meier, Dirk

    2015-04-01

    Future mission of ESA to Jupiter - JUICE - will be equipped with a new radiation monitoring instrument RADEM. The main purpose is characterizing of the highly dynamic and hazardous although rather weakly known particle environment of the giant planet. RADEM performance must be tailored with numerous constraints and severe risks put on the instrument and its detection system. The first objective is precise spectroscopy of electrons and protons over more than two energy orders i.e. up to 40 MeV and 250 MeV respectively. It requires an exact identification of particles and supreme suppression of the background. Measurements should in addition provide dynamic maps of particle directionality and be very accurate even for extremely high particle fluxes. Further goals cover detection of heavy ions with their LET and determination of the radiation dose and dose rate absorbed by the spacecraft. Constrains and risks are given by limitations put on the monitor mass, volume and power and by radiation damage hazards imposed on its materials, electronic components and detection sensors. Additional challenge is in required instrument operational longevity. The design of RADEM is supported by extensive modeling and Monte Carlo simulations based on present knowledge of the Jupiter radiation environment. Deeper level of optimization requires taking into account the whole spacecraft with all its modules and structures. For entire detection system of RADEM the Si-sensors equipped with structures minimizing radiation damage are chosen. They have individual design features in accordance to their specific functionality such as pitch angle measurements with the directionality detector or energy spectroscopy with the telescope. Detected signals are processed using specially designed low power, radiation hard ASIC responsible for both analogue and digital branches. Initial results based on the previous ASIC version as well as data from studies of the detector radiation damage already exist

  12. The radiation hardness of silica optical fiber used in the LED-fiber monitor of BLM and BESIII EMC

    NASA Astrophysics Data System (ADS)

    Xue, Zhen; Hu, Tao; Fang, Jian; Xu, Zi-Zong; Wang, Xiao-Lian; Lü, Jun-Guang; Zhou, Li; Cai, Xiao; Yu, Bo-Xiang; Wang, Zhi-Gang; Sun, Li-Jun; Sun, Xi-Lei; Zhang, Ai-Wu

    2012-02-01

    LED-fiber system has been used to monitor BLM and BESIII EMC. A radiation hard silica optical fiber is essential for its stability and reliability. Three types of silica optical fibers, silicone-clad silica optical fiber with high OH - content (SeCS), silica-clad silica optical fiber with low OH - content (SCSL) and silica-clad silica opical fiber with high OH - content (SCSH) were studied. In the experiment, 12 groups of fiber samples were irradiated by 60Co and 3 groups of fiber samples were irradiated by BEPCII background radiation. Radiation hardness: the radiation hardness of SCSH is best and meets the radiation hardness requirement for LED-fiber monitor of BLM and BESIII EMC. The transmission of SeCS and SCSH decreased to around 80% under the 60Co-irradiation of 5 Gy and 10 Gy, respectively. The radiation hardness of SeCS is worst because of its silicone cladding. Recovery characteristics: 60Co-irradiated by the same doses, there were both more annealable and more permanent color centers formed in SeCS than SCSL, and for the same kind of fibers, as long as the irradiated doses are under a certain amount (for example, less than 5 Gy for SeCS), the higher the doses, both the more annealable and the more permanent color centers are formed.

  13. A high frame rate, 16 million pixels, radiation hard CMOS sensor

    NASA Astrophysics Data System (ADS)

    Guerrini, N.; Turchetta, R.; Van Hoften, G.; Henderson, R.; McMullan, G.; Faruqi, A. R.

    2011-03-01

    CMOS sensors provide the possibility of designing detectors for a large variety of applications with all the benefits and flexibility of the widely used CMOS process. In this paper we describe a novel CMOS sensor designed for transmission electron microscopy. The overall design consists of a large 61 × 63 mm2 silicon area containing 16 million pixels arranged in a 4K × 4K array, with radiation hard geometry. All this is combined with a very fast readout, the possibility of region of interest (ROI) readout, pixel binning with consequent frame rate increase and a dynamic range close to 12 bits. The high frame rate has been achieved using 32 parallel analogue outputs each one operating at up to 20 MHz. Binning of pixels can be controlled externally and the flexibility of the design allows several possibilities, such as 2 × 2 or 4 × 4 binning. Other binning configurations where the number of rows and the number of columns are not equal, such as 2 × 1 or 2 × 4, are also possible. Having control of the CMOS design allowed us to optimise the pixel design, in particular with regard to its radiation hardness, and to make optimum choices in the design of other regions of the final sensor. An early prototype was also designed with a variety of geometries in order to optimise the readout structure and these are presented. The sensor was manufactured in a 0.35 μm standard CMOS process.

  14. Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

    NASA Technical Reports Server (NTRS)

    Cotal, H. L.; Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.

    1994-01-01

    Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

  15. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  16. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  17. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  18. Performance of radiation-hard HV/HR CMOS sensors for the ATLAS inner detector upgrades

    NASA Astrophysics Data System (ADS)

    Liu, J.; Barbero, M.; Bilbao De Mendizabal, J.; Breugnon, P.; Godiot-Basolo, S.; Pangaud, P.; Rozanov, A.

    2016-03-01

    A major upgrade (Phase II Upgrade) to the Large Hadron Collider (LHC), scheduled for 2022, will be brought to the machine so as to extend its discovery potential. The upgraded LHC, called High-Luminosity LHC (HL-LHC), will run with a nominal leveled instantaneous luminosity of 5×1034 cm-2s-1, more than twice the expected luminosity. This unprecedented luminosity will result in higher occupancy and background radiations, which will request the design of a new Inner Tracker (ITk) which should have higher granularity, reduced material budget and improved radiation tolerance. A new pixel sensor concept based on High Voltage and High Resistivity CMOS (HV/HR CMOS) technology targeting the ATLAS inner detector upgrade is under exploration. With respect to the traditional hybrid pixel detector, the HV/HR CMOS sensor can potentially offer lower material budget, reduced pixel pitch and lower cost. Several prototypes have been designed and characterized within the ATLAS upgrade R&D effort, to investigate the detection and radiation hardness performance of various commercial technologies. An overview of the HV/HR CMOS sensor operation principle is described in this paper. The characterizations of three prototypes with X-ray, proton and neutron irradiation are also given.

  19. A radiation hard dipole magnet coils using aluminum clad copper conductors

    SciTech Connect

    Leonhardt, W.J.

    1989-01-01

    A C-type septum dipole magnet is located 600 mm downstream of the primary target in an external beam line of the AGS. Conventional use of fiber glass/epoxy electrical insulation for the magnet coils results in their failure after a relatively short running period, therefore a radiation hard insulation system is required. This is accomplished by replacing the existing copper conductor with a copper conductor having a thin aluminum skin which is anodized to provide the electrical insulation. Since the copper supports a current density of 59 A/mm/sup 2/, no reduction in cross sectional area can be tolerated. Design considerations, manufacturing techniques, and operating experience of a prototype dipole is presented. 3 refs., 4 figs.

  20. Radiation-hard beam position detector for use in the accelerator dump lines

    SciTech Connect

    Pavel Degtiarenko; Danny Dotson; Arne Freyberger; Vladimir Popov

    2005-06-01

    A new method of beam position measurement suitable for monitoring high energy and high power charged particle beams in the vicinity of high power beam dumps is presented. We have found that a plate made of Chemical Vapor Deposition (CVD) Silicon Carbide (SiC) has physical properties that make it suitable for such an application. CVD SiC material is a chemically inert, extremely radiation-hard, thermo-resistive semiconductor capable of withstanding working temperatures over 1500 C. It has good thermal conductivity comparable to that of Aluminum, which makes it possible to use it in high-current particle beams. High electrical resistivity of the material, and its semiconductor properties allow characterization of the position of a particle beam crossing such a plate by measuring the balance of electrical currents at the plate ends. The design of a test device, and first results are presented in the report.

  1. Development of radiation hard edgeless detectors with current terminating structure on p-type silicon

    NASA Astrophysics Data System (ADS)

    Verbitskaya, E.; Eremin, V.; Ruggiero, G.

    2011-12-01

    The development of edgeless Si detectors was stimulated by the tasks of the total pp cross-section study in the TOTEM experiment at the Large Hadron Collider at CERN. For this, the dead region at the detector diced side should be reduced below 50 μm. This requirement is successfully realized in edgeless Si detectors with current terminating structure (CTS), which are now operating at LHC. The development of the experiment and future LHC upgrade need the elaboration of radiation hard version of edgeless Si detectors. The current investigation represents an extension in understanding on edgeless detectors operation and development of a new issue - edgeless detectors with CTS on p-type Si.

  2. Development of radiation hard CMOS active pixel sensors for HL-LHC

    NASA Astrophysics Data System (ADS)

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  3. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Tartarotti Maimone, D.; Pennicard, D.; Sarajlic, M.; Graafsma, H.

    2014-12-01

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~ 10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effects, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of the electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel (``edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays ( < 10 keV), especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model can be used to optimize the edge design. From the edge optimization, it is found that in order to guarantee the sensitivity of the last few pixels to low-energy X-rays, the edge space should be kept at least 50% of

  4. From Exploratory Synthesis to Hard Radiation Detection: Crystal Growth and Characterization of Chalcogenide and Chalcohalide Materials

    NASA Astrophysics Data System (ADS)

    Nguyen, Sandy Linhsa

    In the first half of this thesis work, exploratory synthesis of materials using mixed polychalcogenide fluxes yielded four quaternary mixed Te/S compounds, with the respective chalcogen atoms residing in different crystallographic sites. Two-dimensional thiotellurite compounds (Ag2TeS3) 2·A2S6 (A = Rb, Cs), containing the trigonal pyramidal [TeS 3]2- unit, were synthesized and characterized. These structures are composed of layers of neutral [Ag2TeS3] alternating with charge-balanced salt layers containing the polysulfide chain [S6]2- and alkali metal ions. Using mixed Te/S polychalcogenide fluxes for compound discovery, we then investigated a new set of layered metal dichalcogenides, Ag2Te(MS2)3 (M = V, Nb) crystallizing in the P-62m space group. Ag2Te(MS2)3 contains layers of [Ag2Te] sandwiched between layers of [MS2] (M = V, Nb). The Ag and, more interestingly, Te atoms are linearly coordinated by S atoms in the [MS2] layers. This linear coordination of the Te atom by S atoms is unprecedented in the literature and stabilized by charge transfer within the [Ag2Te] layers. In the latter half, we report the bulk crystal growth and characterization of Tl-based chalcogenide and chalcohalide materials for hard radiation (X- and gamma-ray) detection, which requires high density, wide band gaps, and high resistivity. Lattice hybridization was applied to identify materials with optimal properties for hard radiation detection, resulting in the chalcohalide compound Tl6SI4. Tl6SI4 exhibits low effective mass of carriers, high resistivity, optimal band gap, and large hardness values. The figure of merit mutau products, (mutau) e = 2.1 x 10-3 cm2V-1 and (mutau)h = 2.3 x 10-5 cm2V -1, are comparable to state-of-the-art commercially used materials. Furthermore, high resolution detection of Ag X-rays by Tl6SI 4 was seen at 22 keV (2.6%). Dimensional reduction was used to identify Tl-based chalcogenide materials Tl2MS3 (M = Ge, Sn). Tl2MS3 show great potential for use as hard

  5. Radiation hard fiber optic thermo-hygrometers for relative humidity detection in the CMS experiment at CERN

    NASA Astrophysics Data System (ADS)

    Berruti, G.; Consales, M.; Giordano, M.; Buontempo, S.; Breglio, G.; Makovec, A.; Petagna, P.; Cusano, A.

    2014-05-01

    This work investigates the performances and the radiation hardness capability of optical thermo-hygrometers based on Fiber Bragg Gratings (FBG) technology for humidity monitoring in the Compact Muon Solenoid experiment (CMS) at CERN, in Geneva. Extensive characterizations in terms of sensitivity, repeatability and accuracy on 80 specially produced polyimide-coated FBG sensors and 80 commercial temperature FBG sensors are presented. Progressive irradiation campaigns with γ- ionizing radiations were also performed. Results showed that the sensors sensitivity is unchanged after each radiation exposure; while the wavelength peak exhibits a radiation-induced shift. The saturation properties of this shift are discussed.

  6. Radiation hardness of semiconductor avalanche detectors for calorimeters in future HEP experiments

    NASA Astrophysics Data System (ADS)

    Kushpil, V.; Mikhaylov, V.; Kugler, A.; Kushpil, S.; Ladygin, V. P.; Svoboda, O.; Tlustý, P.

    2016-02-01

    During the last years, semiconductor avalanche detectors are being widely used as the replacement of classical PMTs in calorimeters for many HEP experiments. In this report, basic selection criteria for replacement of PMTs by solid state devices and specific problems in the investigation of detectors radiation hardness are discussed. The design and performance of the hadron calorimeters developed for the future high energy nuclear physics experiments at FAIR, NICA, and CERN are discussed. The Projectile Spectator Detector (PSD) for the CBM experiment at the future FAIR facility, the Forward Calorimeter for the NA61 experiment at CERN and the Multi Purpose Detector at the future NICA facility are reviewed. Moreover, new methods of data analysis and results interpretation for radiation experiments are described. Specific problems of development of detectors control systems and possibilities of reliability improvement of multi-channel detectors systems are shortly overviewed. All experimental material is based on the investigation of SiPM and MPPC at the neutron source in NPI Rez.

  7. Radiation hardness of SiC subjected to alternating irradiation and annealing

    SciTech Connect

    Ivanov, A. M. Strokan, N. B.; Lebedev, A. A.

    2008-12-15

    Effect of the cycle 'introduction of defects, annealing, and repeated introduction of defects' on the SiC properties has been studied by means of nuclear spectrometry for an example of degradation of characteristics of a p-n nuclear radiation detector. The defects were introduced by irradiation with 8-MeV protons in two equal fluences of 3 x 10 14 cm{sup -2}. The total fluence of 6 x 10{sup 14} cm{sup -2} corresponded to an introduction of 2.4 x 10 17 cm{sup -3} primary knocked-out atoms. The annealing was made in two stages, each 1 h long, at temperatures of 600 and 700 {sup o}C. The detectors were tested with 5.4-MeV {alpha} particles, with the charge collection efficiency and specific features of the amplitude spectrum determined. The measurements were performed in the temperature range of 20-250 deg. C. It was shown that the effect of the first irradiation and the subsequent annealing does not significantly change the radiation hardness of SiC. The effective concentration of centers introduced in the course of the second irradiation (at the same fluence) is higher by a factor of 1.2. The nonequivalence of the fluences can also be attributed to the effect of the high total proton fluence of 6 x 10{sup 14} cm{sup -2}.

  8. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  9. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    SciTech Connect

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  10. Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

    NASA Technical Reports Server (NTRS)

    Katzman, Vladimir

    2012-01-01

    A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The

  11. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  12. Tests of Radiation-Hard Silicon Microstrip Sensors for CMS in S-LHC

    SciTech Connect

    Luukka, Panja; Maenpaa, Teppo; Tuovinen, Esa; Spiegel, Lenny; Flight, Robert; /Rochester U.

    2011-02-21

    The tests are to study the performance of various silicon microstrip sensors that are sufficiently radiation-hard to be considered as candidates for the CMS outer (R > 25cm) tracker in the second phase of the currently envisioned S-LHC upgrade. The main goal of the beam test is to test Float Zone (FZ) and Magnetic Czochralski (MCz) silicon sensors that have been procured from Hamamatsu by the CMS collaboration as possible replacements for the CMS outer tracker for phase 2 operations. The detectors under test (DUT) will be isntalled in a cold box that contains 10 slots for modules based on CMS Tracker hybrids. Slots 1-4 and 7-10 are occupied by reference planes and slots 5 and 6 are reserved for DUTs. The box is cooled by Peltier elements in thermal contact with the top and bottom aluminum baseplates and is typically operated at around -25 C. A PCI based version of the CMS DAQ is used to read out the 10 slots based on triggers provided by beam scintillation counters. Given the low rate of beam particles the hybrid APVs will be operated in Peak mode, which maximizes the signal-to-noise performance of the readout chips. The internal clock operates at the LHC frequency of 40 MHz.

  13. Radiation Hard Bandpass Filters for Mid- to Far-IR Planetary Instruments

    NASA Technical Reports Server (NTRS)

    Brown, Ari D.; Aslam, Shahid; Chervenack, James A.; Huang, Wei-Chung; Merrell, Willie C.; Quijada, Manuel; Steptoe-Jackson, Rosalind; Wollack, Edward J.

    2012-01-01

    We present a novel method to fabricate compact metal mesh bandpass filters for use in mid- to far-infrared planetary instruments operating in the 20-600 micron wavelength spectral regime. Our target applications include thermal mapping instruments on ESA's JUICE as well as on a de-scoped JEO. These filters are novel because they are compact, customizable, free-standing copper mesh resonant bandpass filters with micromachined silicon support frames. The filters are well suited for thermal mapping mission to the outer planets and their moons because the filter material is radiation hard. Furthermore, the silicon support frame allows for effective hybridization with sensors made on silicon substrates. Using a Fourier Transform Spectrometer, we have demonstrated high transmittance within the passband as well as good out-of-band rejection [1]. In addition, we have developed a unique method of filter stacking in order to increase the bandwidth and sharpen the roll-off of the filters. This method allows one to reliably control the spacing between filters to within 2 microns. Furthermore, our method allows for reliable control over the relative position and orienta-tion between the shared faces of the filters.

  14. Design and Fabrication of a Radiation-Hard 500-MHz Digitizer Using Deep Submicron Technology

    SciTech Connect

    K.K. Gan; M.O. Johnson; R.D. Kass; J. Moore

    2008-09-12

    The proposed International Linear Collider (ILC) will use tens of thousands of beam position monitors (BPMs) for precise beam alignment. The signal from each BPM is digitized and processed for feedback control. We proposed the development of an 11-bit (effective) digitizer with 500 MHz bandwidth and 2 G samples/s. The digitizer was somewhat beyond the state-of-the-art. Moreover we planned to design the digitizer chip using the deep-submicron technology with custom transistors that had proven to be very radiation hard (up to at least 60 Mrad). The design mitigated the need for costly shielding and long cables while providing ready access to the electronics for testing and maintenance. In FY06 as we prepared to submit a chip with test circuits and a partial ADC circuit we found that IBM had changed the availability of our chosen IC fabrication process (IBM 6HP SiGe BiCMOS), making it unaffordable for us, at roughly 3 times the previous price. This prompted us to change our design to the IBM 5HPE process with 0.35 µm feature size. We requested funding for FY07 to continue the design work and submit the first prototype chip. Unfortunately, the funding was not continued and we will summarize below the work accomplished so far.

  15. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  16. Monolithic and integrated phased array antennas

    NASA Astrophysics Data System (ADS)

    Schaubert, Daniel H.; Pozar, David M.

    Some of the problems relevant to the design of monolithic and integrated arrays are examined. In particular, attention is given to electrical and mechanical design considerations, restrictions they impose on the choice of elements and architecture of integrated arrays, and elements that can alleviate one or more of these restrictions. Monolithic array designs are compared with some multiple-layer and two-sided designs using such criteria as scan range, bandwidth, substrate size and configuration, polarization, and feed line radiation. Broadside radiating elements, such as microstrip dipoles and patches, as well as end-fire radiating slots are considered.

  17. Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Swift, G. M.; Johnston, A. H.

    1995-01-01

    In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

  18. Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Bertness, K. A.; Kibbler, A. E.; Kramer, C.; Olson, J. M.

    1994-01-01

    In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

  19. Monolithic passively Q-switched Cr:Nd:GSGG microlaser

    NASA Astrophysics Data System (ADS)

    Schmitt, Randal L.

    2005-09-01

    Optical firing sets need miniature, robust, reliable pulsed laser sources for a variety of triggering functions. In many cases, these lasers must withstand high transient radiation environments. In this paper we describe a monolithic passively Q-switched microlaser constructed using Cr:Nd:GSGG as the gain material and Cr4+:YAG as the saturable absorber, both of which are radiation hard crystals. This laser consists of a 1-mm-long piece of undoped YAG, a 7-mm-long piece of Cr:Nd:GSGG, and a 1.5-mm-long piece of Cr4+:YAG diffusion bonded together. The ends of the assembly are polished flat and parallel and dielectric mirrors are coated directly on the ends to form a compact, rugged, monolithic laser. When end pumped with a diode laser emitting at ~807.6 nm, this passively Q-switched laser produces ~1.5-ns-wide pulses. While the unpumped flat-flat cavity is geometrically unstable, thermal lensing and gain guiding produce a stable cavity with a TEM00 gaussian output beam over a wide range of operating parameters. The output energy of the laser is scalable and dependent on the cross sectional area of the pump beam. This laser has produced Q-switched output energies from several μJ per pulse to several 100 μJ per pulse with excellent beam quality. Its short pulse length and good beam quality result in high peak power density required for many applications such as optically triggering sprytrons. In this paper we discuss the design, construction, and characterization of this monolithic laser as well as energy scaling of the laser up to several 100 μJ per pulse.

  20. Influence of gamma radiation on morphology structure, electrochemical corrosion behavior and hardness of Ni-Cr based alloys

    NASA Astrophysics Data System (ADS)

    El-Bediwi, Abu Bakr; Saad, Mohamed; El-Fallalb, Abeer A.

    This study evaluates the effects of gamma radiation on structure, electrochemical corrosion behavior and Vickers hardness of commercial dental Nikkeli-Kromi-Polttosekoitus [Ni65.2Cr22.5Mo9.5X2.8 (X=Nb, Si, Fe and Mn)] alloy. The corrosion rate of Ni65.2Cr22.5Mo9.5X2.8 (X=Nb, Si, Fe and Mn) alloy with 0.5 M HCl is increased with increasing the exposure rate of gamma radiation. The corrosion resistance of Ni65.2Cr22.5Mo9.5X2.8 (X=Nb, Si, Fe and Mn) is varied and reaches a minimum value at 30 KGy. The corrosion potential value also is varied and reaches its highest value at 30 KGy. The Vickers hardness value of Ni65.2Cr22.5Mo9.5X2.8 (X=Nb, Si, Fe and Mn) alloy is decreased by increasing the gamma radiation dose. Also it is obvious from our results that the effects of gamma radiation at the surface are much higher as compared with deeper parts and the structure of the alloy is changed due to its exposure to gamma radiation.

  1. CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; Fant, A.; Gasiorek, P.; Esbrand, C.; Griffiths, J. A.; Metaxas, M. G.; Royle, G. J.; Speller, R.; Venanzi, C.; van der Stelt, P. F.; Verheij, H.; Li, G.; Theodoridis, S.; Georgiou, H.; Cavouras, D.; Hall, G.; Noy, M.; Jones, J.; Leaver, J.; Machin, D.; Greenwood, S.; Khaleeq, M.; Schulerud, H.; Østby, J. M.; Triantis, F.; Asimidis, A.; Bolanakis, D.; Manthos, N.; Longo, R.; Bergamaschi, A.

    2007-12-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS).

  2. The low Earth orbit radiation environment and its impact on the prompt background of hard x-ray focusing telescopes

    NASA Astrophysics Data System (ADS)

    Fioretti, V.; Bulgarelli, A.; Malaguti, G.; Bianchin, V.; Trifoglio, M.; Gianotti, F.

    2012-07-01

    The background minimization is a science-driven necessity in order to reach deep sensitivity levels in the hard X-ray band, one of the key scientific requirements for hard X-ray telescopes (e.g. NuSTAR, ASTRO-H). It requires a careful modeling of the radiation environment and new concepts of shielding systems. We exploit the Bologna Geant4 Multi-Mission Simulator (BoGEMMS) features to evaluate the impact of the Low Earth Orbit (LEO) radiation environment on the prompt background level for a hybrid Si/CdTe soft and hard X-ray detection assembly and a combined active and passive shielding system. For each class of particles, the spectral distribution of the background flux is simulated, exploring the effect of different materials (plastic vs inorganic active scintillator) and configurations (passive absorbers enclosing or surrounded by the active shielding) on the background count rate. While protons are efficiently removed by the active shielding, an external passive shielding causes the albedo electrons and positrons to be the primary source of background. Albedo neutrons are instead weakly interactive with the active shielding, and they cause an intense background level below 10 keV via elastic scattering. The best shielding configuration in terms of background and active shielding count rates is given by an inorganic scintillator placed inside the passive layers, with the addition of passive material to absorb the intense fluorescence lines of the active shielding and avoid escape peaks on the CdTe detector.

  3. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  4. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    SciTech Connect

    Makita, M.; Karvinen, P.; Zhu, D.; Juranic, P. N.; Grünert, J.; Cartier, S.; Jungmann-Smith, J. H.; Lemke, H. T.; Mozzanica, A.; Nelson, S.; Patthey, L.; Sikorski, M.; Song, S.; Feng, Y.; David, C.

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy of >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.

  5. RADECS Short Course Section 4 Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian

    2003-01-01

    Contents include the following: Introduction. Programmatic aspects of RHA. RHA componens: requirements and specifications; mission radiation environment; and parts selection and radiation tolerance. Analysis at the function/subsystem/system level: TID/DD; SEE. Conclusion.

  6. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J. )

    1993-05-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  7. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J.

    1992-08-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  8. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  9. Widely tunable, all-polarization maintaining, monolithic mid-infrared radiation source based on differential frequency generation in PPLN crystal

    NASA Astrophysics Data System (ADS)

    Krzempek, Karol; Sobon, Grzegorz; Sotor, Jaroslaw; Dudzik, Grzegorz; Abramski, Krzysztof M.

    2014-10-01

    We present a difference frequency generation based (DFG) mid-infrared (mid-IR) laser source using an all-polarization-maintaining-fiber (all-PM) amplifier capable of simultaneous amplification of 1064 nm and 1550 nm signals. The amplifier incorporates a single piece of a standard erbium:ytterbium (Er:Yb) co-doped double-clad (DC) active fiber and a limited number of off-the-shelf fiber-based components. Excited by a single 9 W multimode pump, the amplifier delivered over 12.1 dB and 17.8 dB gain at 1 µm and 1.55 µm, respectively. Due to an all-PM configuration, the amplifier was exceptionally convenient for DFG of mid-IR radiation in periodically polled lithium niobate (PPLN) crystal, yielding an output power of ~200 µW in a wide spectral range spanning from 3300 to 3470 nm.

  10. Effects of quenching, irradiation, and annealing processes on the radiation hardness of silica fiber cladding materials (I)

    NASA Astrophysics Data System (ADS)

    Wen, Jianxiang; Gong, Renxiang; Xiao, Zhongyin; Luo, Wenyun; Wu, Wenkai; Luo, Yanhua; Peng, Gang-ding; Pang, Fufei; Chen, Zhenyi; Wang, Tingyun

    2016-07-01

    Silica optical fiber cladding materials were experimentally treated by a series of processes. The treatments involved quenching, irradiation, followed by annealing and subsequent re-irradiation, and they were conducted in order to improve the radiation hardness. The microstructural properties of the treated materials were subsequently investigated. Following the treatment of the optical fiber cladding materials, the results from the electron spin resonance (ESR) analysis demonstrated that there was a significant decrease in the radiation-induced defect structures. The ESR signals became significantly weaker when the samples were annealed at 1000 °C in combination with re-irradiation. In addition, the microstructure changes within the silica optical fiber cladding material were also analyzed using Raman spectroscopy. The experimental results demonstrate that the Sisbnd Osbnd Si bending vibrations at ω3 = 800-820 cm-1 and ω4 = 1000-1200 cm-1 (with longitudinal optical (LO) and transverse optical (TO) splitting bands) were relatively unaffected by the quenching, irradiation, and annealing treatments. In particular, the annealing process resulted in the disappearance of the defect centers; however, the LO and TO modes at the ω3 and ω4 bands were relatively unchanged. With the additional support of the ESR test results, we can conclude that the combined treatment processes can significantly enhance the radiation hardness properties of the optical fiber cladding materials.

  11. Hard-X-ray magnetic microscopy and local magnetization analysis using synchrotron radiation.

    PubMed

    Suzuki, Motohiro

    2014-11-01

    X-ray measurement offers several useful features that are unavailable from other microscopic means including electron-based techniques. By using X-rays, one can observe the internal parts of a thick sample. This technique basically requires no high vacuum environment such that measurements are feasible for wet specimens as well as under strong electric and magnetic fields and even at a high pressure. X-ray spectroscopy using core excitation provides element-selectivity with significant sensitivities to the chemical states and atomic magnetic moments in the matter. Synchrotron radiation sources produce a small and low-divergent X-ray beam, which can be converged to a spot with the size of a micrometer or less using X-ray focusing optics. The recent development in the focusing optics has been driving X-ray microscopy, which has already gone into the era of X-ray nanoscopy. With the use of the most sophisticated focusing devices, an X-ray beam of 7-nm size has successfully been achieved [1]. X-ray microscopy maintains above-mentioned unique features of X-ray technique, being a perfect complement to electron microscopy.In this paper, we present recent studies on magnetic microscopy and local magnetic analysis using hard X-rays. The relevant instrumentation developments are also described. The X-ray nanospectroscopy station of BL39XU at SPring-8 is equipped with a focusing optics consisting of two elliptic mirrors, and a focused X-ray beam with the size of 100 × 100 nm(2) is available [2]. Researchers can perform X-ray absorption spectroscopy: nano-XAFS (X-ray absorption fine structure) using the X-ray beam as small as 100 nm. The available X-ray energy is from 5 to 16 keV, which allows nano-XAFS study at the K edges of 3d transition metals, L edges of rare-earth elements and 5d noble metals. Another useful capability of the nanoprobe is X-ray polarization tunability, enabling magnetic circular dichroism (XMCD) spectroscopy with a sub-micrometer resolution. Scanning

  12. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    SciTech Connect

    Jungmann-Smith, J. H. Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.; Cartier, S.; Medjoubi, K.

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  13. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    NASA Astrophysics Data System (ADS)

    Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  14. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Jaggi, A; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10(4) photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm(2) pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm(2). Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines. PMID:26724009

  15. Radiation Hardness Assurance Issues Associated with COTS in JPL Flight Systems: The Challenge of Europa

    NASA Technical Reports Server (NTRS)

    Barnes, C.; Johnston, A.

    1999-01-01

    With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

  16. RADIATION HARDNESS / TOLERANCE OF SI SENSORS / DETECTORS FOR NUCLEAR AND HIGH ENERGY PHYSICS EXPERIMENTS.

    SciTech Connect

    LI,Z.

    2002-09-09

    Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, and space charge concentration. The increase in space charge concentration is particularly damaging since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. Several strategies can be used to make Si detectors more radiation had tolerant to particle radiations. In this paper, the main radiation induced degradations in Si detectors will be reviewed. The details and specifics of the new engineering strategies: material/impurity/defect engineering (MIDE); device structure engineering (DSE); and device operational mode engineering (DOME) will be given.

  17. A Radiation-Hard Silicon Drift Detector Array for Extraterrestrial Element Mapping

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Chen, Wei; De Geronimo, Gianluigi; Keister, Jeff; Li, Shaouri; Li, Zhen; Siddons, David P.; Smith, Graham

    2011-01-01

    Measurement of x-rays from the surface of objects can tell us about the chemical composition Absorption of radiation causes characteristic fluorescence from material being irradiated. By measuring the spectrum of the radiation and identifying lines in the spectrum, the emitting element (s) can be identified. This technique works for any object that has no absorbing atmosphere and significant surface irradiation : Our Moon, the icy moons of Jupiter, the moons of Mars, the planet Mercury, Asteroids and Comets

  18. Radiation-hard analog-to-digital converters for space and strategic applications

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Dantas, A. R. V.

    1985-01-01

    During the course of the Jet Propulsion Laboratory's program to study radiation-hardened analog-to-digital converters (ADCs), numerous milestones have been reached in manufacturers' awareness and technology development and transfer, as well as in user awareness of these developments. The testing of ADCs has also continued with twenty different ADCs from seven manufacturers, all tested for total radiation dose and three tested for neutron effects. Results from these tests are reported.

  19. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  20. Low-mass, intrinsically-hard high temperature radiator. Final report, Phase I

    SciTech Connect

    1990-07-15

    This paper reports on the investigation of layered ceramic/metal composites in the design of low-mass hardened radiators for space heat rejection systems. The investigation is part of the Strategic Defence Initiative. This effort evaluated the use of layered composites as a material to form thin-walled, vacuum leaktight heat pipes. The heat pipes would be incorporated into a large heat pipe radiator for waste heat rejection from a space nuclear power source. Composite materials evaluations were performed on combinations of refractory metals and ceramic powders. Fabrication experiments were performed to demonstrate weldability. Two titanium/titanium diboride composite tubes were successfully fabricated into potassium heat pipes and operated at temperatures in excess of 700C. Testing and analysis for composite tubes are described in the report. The study has verified the feasibility of using layered composites for forming thin-walled, light weight heat pipe tubes for use in hardened space radiators.

  1. Generation of hard x rays from transition radiation using high-density foils and moderate-energy electrons

    SciTech Connect

    Piestrup, M.A. ); Moran, M.J. ); Boyers, D.G.; Pincus, C.I. ); Kephart, J.O. ); Gearhart, R.A. ); Maruyama, X.K. )

    1991-03-01

    In experiments using targets consisting of many thin metal foils, we have demonstrated that a narrow, forward-directed cone of transition radiation in the 8- to 60-keV spectral range can be generated by electron beams with moderate energies (between 100 and 500 MeV). The theory suggests that high-density, moderate-atomic-number metals are the optimum foil materials and that the foil thickness can be chosen to maximize photon production within a desired spectral range. The three targets used in the experiments consisted of 10 foils of 1-{mu}m-thick gold, 40 foils of 8.5-{mu}m stainless steel, and 20 foils of 7.9-{mu}m copper. The efficiency with which hard x rays are generated, and the fact that the requisite electron-beam energies are lower by a factor of 5 to 10, make such a radiation source an attractive alternative to synchrotron radiation for applications such as medical imaging, spectroscopy, and microscopy.

  2. Improvement of the radiation hardness of a directly converting high resolution intra-oral X-ray imaging sensor

    NASA Astrophysics Data System (ADS)

    Spartiotis, Konstantinos; Pyyhtiä, Jouni; Schulman, Tom

    2003-11-01

    The radiation tolerance of a directly converting digital intra-oral X-ray imaging sensor reported in Spartiotis et al. [Nucl. Instr. and Meth. A 501 (2003) 594] has been tested using a typical dental X-ray beam spectrum. Radiation induced degradation in the performance of the sensor which consists of CMOS signal readout circuits bump bonded to a high resistivity silicon pixel detector was observed already before a dose (in air) of 1 krad. Both increase in the leakage current of the pixel detector manufactured by Sintef, Norway and signal leakage to ground from the gate of the pixel input MOSFETs of the readout circuit were observed and measured. The sensitive part of the CMOS circuit was identified as the protection diode of the gate of the input MOSFET. After removing the gate protection diode no signal leakage was observed up to a dose of 5 krad (air) which approximately corresponds to 125.000 typical dental X-ray exposures. The radiation hardness of the silicon pixel detector was improved by using a modified oxidation process supplied by Colibrys, Switzerland. The improved pixel detectors showed no increase in the leakage current at dental doses.

  3. Radiation hard polyimide-coated FBG optical sensors for relative humidity monitoring in the CMS experiment at CERN

    NASA Astrophysics Data System (ADS)

    Makovec, A.; Berruti, G.; Consales, M.; Giordano, M.; Petagna, P.; Buontempo, S.; Breglio, G.; Szillasi, Z.; Beni, N.; Cusano, A.

    2014-03-01

    This work investigates the performance and the radiation hardness capability of optical thermo-hygrometers based on Fibre Bragg Gratings (FBG) for humidity monitoring in the Compact Muon Solenoid (CMS), one of the four experiments running at CERN in Geneva. A thorough campaign of characterization was performed on 80 specially produced Polyimide-coated RH FBG sensors and 80 commercial temperature FBG sensors. Sensitivity, repeatability and accuracy were studied on the whole batch, putting in evidence the limits of the sensors, but also showing that they can be used in very dry conditions. In order to extract the humidity measurements from the sensor readings, commercial temperature FBG sensors were characterized in the range of interest. Irradiation campaigns with ionizing radiation (γ-rays from a Co60 source) at incremental absorbed doses (up to 210 kGy for the T sensors and up to 90 kGy for the RH sensors) were performed on sample of T and RH-Sensors. The results show that the sensitivity of the sensors is unchanged up to the level attained of the absorbed dose, while the natural wavelength peak of each sensor exhibits a radiation-induced shift (signal offset). The saturation properties of this shift are discussed.

  4. A confident source of hard X-rays: radiation from a tokamak applicable for runaway electrons diagnosis.

    PubMed

    Kafi, M; Salar Elahi, A; Ghoranneviss, M; Ghanbari, M R; Salem, M K

    2016-09-01

    In a tokamak with a toroidal electric field, electrons that exceed the critical velocity are freely accelerated and can reach very high energies. These so-called `runaway electrons' can cause severe damage to the vacuum vessel and are a dangerous source of hard X-rays. Here the effect of toroidal electric and magnetic field changes on the characteristics of runaway electrons is reported. A possible technique for runaways diagnosis is the detection of hard X-ray radiation; for this purpose, a scintillator (NaI) was used. Because of the high loop voltage at the beginning of a plasma, this investigation was carried out on toroidal electric field changes in the first 5 ms interval from the beginning of the plasma. In addition, the toroidal magnetic field was monitored for the whole discharge time. The results indicate that with increasing toroidal electric field the mean energy of runaway electrons rises, and also an increase in the toroidal magnetic field can result in a decrease in intensity of magnetohydrodynamic oscillations which means that for both conditions more of these high-energy electrons will be generated. PMID:27577779

  5. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    DOE PAGESBeta

    Makita, M.; Karvinen, P.; Zhu, D.; Juranic, P. N.; Grünert, J.; Cartier, S.; Jungmann-Smith, J. H.; Lemke, H. T.; Mozzanica, A.; Nelson, S.; et al

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy ofmore » >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.« less

  6. Radiation hardness test of the Philips Digital Photon Counter with proton beam

    NASA Astrophysics Data System (ADS)

    Barnyakov, M. Yu.; Frach, T.; Kononov, S. A.; Kuyanov, I. A.; Prisekin, V. G.

    2016-07-01

    The Philips Digital Photon Counter (DPC) is a silicon photomultiplier combining Geiger-mode avalanche photodiodes (G-APD) and dedicated readout electronics in the same chip. The DPC is a promising photon sensor for future RICH detectors. A known issue of G-APD is its sensitivity to radiation damage. Two DPC sensors were tested using 800 MeV/c protons. An increase of dark counting rate with proton fluence up to 4 ·1011cm-2 has been measured.

  7. X-rays and hard ultraviolet radiation from the first galaxies: ionization bubbles and 21-cm observations

    NASA Astrophysics Data System (ADS)

    Venkatesan, Aparna; Benson, Andrew

    2011-11-01

    The first stars and quasars are known sources of hard ionizing radiation in the first billion years of the Universe. We examine the joint effects of X-rays and hard ultraviolet (UV) radiation from such first-light sources on the hydrogen and helium reionization of the intergalactic medium (IGM) at early times, and the associated heating. We study the growth and evolution of individual H II, He II and He III regions around early galaxies with first stars and/or quasi-stellar object populations. We find that in the presence of helium-ionizing radiation, X-rays may not dominate the ionization and thermal history of the IGM at z˜ 10-20, contributing relatively modest increases to IGM ionization and heating up to ˜103-105 K in IGM temperatures. We also calculate the 21-cm signal expected from a number of scenarios with metal-free starbursts and quasars in varying combinations and masses at these redshifts. The peak values for the spin temperature reach ˜104-105 K in such cases. The maximum values for the 21-cm brightness temperature are around 30-40 mK in emission, while the net values of the 21-cm absorption signal range from ˜a few to 60 mK on scales of 0.01-1 Mpc. We find that the 21-cm signature of X-ray versus UV ionization could be distinct, with the emission signal expected from X-rays alone occurring at smaller scales than that from UV radiation, resulting from the inherently different spatial scales at which X-ray and UV ionization/heating manifests. This difference is time-dependent and becomes harder to distinguish with an increasing X-ray contribution to the total ionizing photon production. Such differing scale-dependent contributions from X-ray and UV photons may therefore 'blur' the 21-cm signature of the percolation of ionized bubbles around early haloes (depending on whether a cosmic X-ray or UV background is built up first) and affect the interpretation of 21-cm data constraints on reionization.

  8. Performance of Multilayer Monochromators for Hard X-Ray Imaging with Coherent Synchrotron Radiation

    SciTech Connect

    Dietsch, R.; Holz, T.; Kraemer, M.; Weissbach, D.; Rack, A.; Weitkamp, T.; Morawe, Ch.; Cloetens, P.; Ziegler, E.; Riotte, M.; Rack, T.; Siewert, F.

    2011-09-09

    We present a study in which multilayers of different periodicity (from 2.5 to 5.5 nm), composition (W/Si, Mo/Si, Pd/B{sub 4}C, Ru/B{sub 4}C), and numbers of layers have been compared. Particularly, we chose mirrors with similar intrinsic quality (roughness and reflectivity) to study their performance (flatness and coherence of the outgoing beam) as monochromators in synchrotron radiography. The results indicate that material composition is the dominating factor for the performance. This is important to consider for future developments in synchrotron-based hard x-ray imaging methods. In these techniques, multilayer monochromators are popular because of their good tradeoff between spectral bandwidth and photon flux density of the outgoing beam, but sufficient homogeneity and preservation of the coherent properties of the reflected beam are major concerns. The experimental results we collected may help scientists and engineers specify multilayer monochromators and can contribute to better exploitation of the advantages of multilayer monochromators in microtomography and other full-field imaging techniques.

  9. Monoliths: special issue in a new package.

    PubMed

    Svec, Frantisek

    2013-08-01

    Regular special issues concerning monoliths have always been a stronghold of the Journal of Separation Science. Typically, we issued a call for papers, collected and processed the submitted manuscripts, and all of them were then printed in a single issue of the journal. This approach worked to a certain limit quite acceptably but there was always a longer waiting time between the early submissions and publication. This is why we decided to do it this year differently. I claimed in my 2013 New Years Editorial: "We are living in the electronic era! Why not to make an advantage of that?" And we do. As a result, all manuscript submitted for publication in the special issue Monoliths have already been published in regular issues as soon as they were accepted. The first page of these papers includes a footnote: "This paper is included in the virtual special issue Monoliths available at the Journal of Separation Science website." All papers published with this footnote were collected in a virtual special issue accessible through the internet. This concept ruled out possible delays in publication of contributions submitted early. Since we did not have any real "special issue", there was no need for any hard deadline for submission. We just collected manuscripts submitted for the special issue Monoliths published from January to July 2013 and included them in the virtual special issue. This new approach worked very well and we published 22 excellent papers that are included in the issue available now at this website: http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1615-9314/homepage/virtual_special_issue__monoliths.htm. PMID:23939823

  10. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

    SciTech Connect

    Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung-Han; Facchetti, Antonio; Mark, Tobin J.

    2006-08-14

    In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO{sub 2} gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V{sub th}) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V{sub th} parameters of the SiO{sub 2}-based ZnO NW-FETs display average shifts of {approx}-4.0 and {approx}-10.9 V for 5.71 and 285 krad(Si) H{sup +} irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H{sup +} irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H{sup +} irradiation are significantly lower than those for the corresponding SiO{sub 2} gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

  11. Generation of radicals in hard biological tissues under the action of laser radiation

    NASA Astrophysics Data System (ADS)

    Sviridov, Alexander P.; Bagratashvili, Victor N.; Sobol, Emil N.; Omelchenko, Alexander I.; Lunina, Elena V.; Zhitnev, Yurii N.; Markaryan, Galina L.; Lunin, Valerii V.

    2002-07-01

    The formation of radicals upon UV and IR laser irradiation of some biological tissues and their components was studied by the EPR technique. The radical decay kinetics in body tissue specimens after their irradiation with UV light were described by various models. By the spin trapping technique, it was shown that radicals were not produced during IR laser irradiation of cartilaginous tissue. A change in optical absorption spectra and the dynamics of optical density of cartilaginous tissue, fish scale, and a collagen film under exposure to laser radiation in an air, oxygen, and nitrogen atmosphere was studied.

  12. Design of a radiation-hard optical fiber Bragg grating temperature sensor

    NASA Astrophysics Data System (ADS)

    Gusarov, Andrei I.; Starodubov, Dmitry S.; Berghmans, Francis; Deparis, Olivier; Defosse, Yves; Fernandez, Alberto F.; Decreton, Marc C.; Megret, Patrice; Blondel, Michel

    1999-12-01

    Optical fiber sensors (OFSs) offer numerous advantages, which include immunity to electromagnetic interference, intrinsic safety, small size, a possibly high sensitivity, multiplexing capabilities, and the possibility of remote interrogation. However, OFSs have a relatively low penetration in the commercial market, which is still dominated by standard electromechanical sensors. Nuclear environments are an example where particular OFSs might have a distinct superiority in the competition, but the feasibility of using OFSs in radiation environments still needs to be assessed. In the present paper we report on irradiation experiments performed to provide a sound basis for the design of a fiber Bragg grating based sensor capable to operate even under high total dose exposure.

  13. Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hicks, K. A.; Jennings, G. A.; Lin, Y.-S.; Pina, C. A.; Sayah, H. R.; Zamani, N.

    1989-01-01

    Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

  14. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    NASA Astrophysics Data System (ADS)

    Pastuović, Željko; Capan, Ivana; Cohen, David D.; Forneris, Jacopo; Iwamoto, Naoya; Ohshima, Takeshi; Siegele, Rainer; Hoshino, Norihiro; Tsuchida, Hidekazu

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 1014 cm-3) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z1/2 center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1-6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 1011 cm-2.

  15. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    NASA Astrophysics Data System (ADS)

    Miucci, A.; Gonella, L.; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; La Rosa, A.; Muenstermann, D.; George, M.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J. C.; Liu, J.; Barbero, M.; Rozanov, A.; HV-CMOS Collaboration

    2014-05-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

  16. Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.

    1985-01-01

    The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

  17. Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

    NASA Astrophysics Data System (ADS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Pezzullo, G.; Seif El Nasr-Storey, S.; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-01-01

    Particle detectors for future experiments at the HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed ``building-block'' modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented.

  18. 3D silicon sensors with variable electrode depth for radiation hard high resolution particle tracking

    NASA Astrophysics Data System (ADS)

    Da Vià, C.; Borri, M.; Dalla Betta, G.; Haughton, I.; Hasi, J.; Kenney, C.; Povoli, M.; Mendicino, R.

    2015-04-01

    3D sensors, with electrodes micro-processed inside the silicon bulk using Micro-Electro-Mechanical System (MEMS) technology, were industrialized in 2012 and were installed in the first detector upgrade at the LHC, the ATLAS IBL in 2014. They are the radiation hardest sensors ever made. A new idea is now being explored to enhance the three-dimensional nature of 3D sensors by processing collecting electrodes at different depths inside the silicon bulk. This technique uses the electric field strength to suppress the charge collection effectiveness of the regions outside the p-n electrodes' overlap. Evidence of this property is supported by test beam data of irradiated and non-irradiated devices bump-bonded with pixel readout electronics and simulations. Applications include High-Luminosity Tracking in the high multiplicity LHC forward regions. This paper will describe the technical advantages of this idea and the tracking application rationale.

  19. A Radiation Hard Multi-Channel Digitizer ASIC for Operation in the Harsh Jovian Environment

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Aslam, S.; Akturk, A.; Quilligan, G.

    2011-01-01

    ultimately impact the surface of Europa after the mission is completed. The current JEO mission concept includes a range of instruments on the payload, to monitor dynamic phenomena (such as Io's volcanoes and Jupiters atmosphere), map the Jovian magnetosphere and its interactions with the Galilean satellites, and characterize water oceans beneath the ice shells of Europa and Ganymede. The payload includes a low mass (3.7 Kg) and low power (< 5 W) Thermal Instrument (TI) concept for measuring possible warm thermal anomalies on Europa s cold surface caused by recent (< 10,000 years) eruptive activity. Regions of anomalously high heat flow will be identified by thermal mapping using a nadir pointing, push-broom filter radiometer that provides far-IR imagery in two broad band spectral wavelength regions, 8-20 m and 20-100 m, for surface temperature measurements with better than a 2 K accuracy and a spatial resolution of 250 m/pixel obtained from a 100 Km orbit. The temperature accuracy permits a search for elevated temperatures when combined with albedo information. The spatial resolution is sufficient to resolve Europa's larger cracks and ridge axial valleys. In order to accomplish the thermal mapping, the TI uses sensitive thermopile arrays that are readout by a custom designed low-noise Multi-Channel Digitizer (MCD) ASIC that resides very close to the thermopile linear array outputs. Both the thermopile array and the MCD ASIC will need to show full functionality within the harsh Jovian radiation environment, operating at cryogenic temperatures, typically 150 K to 170 K. In the following, a radiation mitigation strategy together with a low risk Radiation-Hardened-By-Design (RHBD) methodology using commercial foundry processes is given for the design and manufacture of a MCD ASIC that will meet this challenge.

  20. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  1. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Sekonya, K.; Solvyanov, O.

    2015-10-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy and light yield analysis whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs and light loss can be attributed to a breakdown in the light transfer between base and fluor dopants. For doses of 8 MGy to 80 MGy, structural damage leads to possible hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss and light yield loss with increasing dose.

  2. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Mellado, B.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Solvyanov, O.

    2015-06-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs but a breakdown in the light transfer between base and fluor dopants is observed. For doses of 8 MGy to 80 MGy, structural damage leads to hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss as dose is increased.

  3. Beta Backscatter Measures the Hardness of Rubber

    NASA Technical Reports Server (NTRS)

    Morrissey, E. T.; Roje, F. N.

    1986-01-01

    Nondestructive testing method determines hardness, on Shore scale, of room-temperature-vulcanizing silicone rubber. Measures backscattered beta particles; backscattered radiation count directly proportional to Shore hardness. Test set calibrated with specimen, Shore hardness known from mechanical durometer test. Specimen of unknown hardness tested, and radiation count recorded. Count compared with known sample to find Shore hardness of unknown.

  4. A seven-crystal Johann-type hard x-ray spectrometer at the Stanford Synchrotron Radiation Lightsource

    PubMed Central

    Sokaras, D.; Weng, T.-C.; Nordlund, D.; Alonso-Mori, R.; Velikov, P.; Wenger, D.; Garachtchenko, A.; George, M.; Borzenets, V.; Johnson, B.; Rabedeau, T.; Bergmann, U.

    2013-01-01

    We present a multicrystal Johann-type hard x-ray spectrometer (∼5–18 keV) recently developed, installed, and operated at the Stanford Synchrotron Radiation Lightsource. The instrument is set at the wiggler beamline 6-2 equipped with two liquid nitrogen cooled monochromators – Si(111) and Si(311) – as well as collimating and focusing optics. The spectrometer consists of seven spherically bent crystal analyzers placed on intersecting vertical Rowland circles of 1 m of diameter. The spectrometer is scanned vertically capturing an extended backscattering Bragg angular range (88°–74°) while maintaining all crystals on the Rowland circle trace. The instrument operates in atmospheric pressure by means of a helium bag and when all the seven crystals are used (100 mm of projected diameter each), has a solid angle of about 0.45% of 4π sr. The typical resolving power is in the order of \\documentclass[12pt]{minimal}\\begin{document}$\\frac{E}{\\Delta E} \\sim 10\\,000$\\end{document}EΔE∼10000. The spectrometer's high detection efficiency combined with the beamline 6-2 characteristics permits routine studies of x-ray emission, high energy resolution fluorescence detected x-ray absorption and resonant inelastic x-ray scattering of very diluted samples as well as implementation of demanding in situ environments. PMID:23742527

  5. Radiation effects on microstructure and hardness of a titanium aluminide alloy irradiated by helium ions at room and elevated temperatures

    NASA Astrophysics Data System (ADS)

    Wei, Tao; Zhu, Hanliang; Ionescu, Mihail; Dayal, Pranesh; Davis, Joel; Carr, David; Harrison, Robert; Edwards, Lyndon

    2015-04-01

    A 45XD TiAl alloy possessing a lamellar microstructure was irradiated using 5 MeV helium ions to a fluence of 5 × 1021 ion m-2 (5000 appm) with a dose of about 1 dpa (displacements per atom). A uniform helium ion stopping damage region about 17 μm deep from the target surface was achieved by applying an energy degrading wheel. Radiation damage defects including helium-vacancy clusters and small helium bubbles were found in the microstructure of the samples irradiated at room temperature. With increasing irradiation temperature to 300 °C and 500 °C helium bubbles were clearly observed in both the α2 and γ phases of the irradiated microstructure. By means of nanoindentation significant irradiation hardening was measured. For the samples irradiated at room temperature the hardness increased from 5.6 GPa to 8.5 GPa and the irradiation-hardening effect reduced to approximately 8.0 GPa for the samples irradiated at 300 °C and 500 °C.

  6. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Bisello, Francesca; Menichelli, David; Scaringella, Monica; Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta; Bruzzi, Mara

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm2 modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1-2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, 60Co radiation and 226 MeV protons is reported.

  7. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  8. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  9. Monolithic catalytic igniters

    NASA Technical Reports Server (NTRS)

    La Ferla, R.; Tuffias, R. H.; Jang, Q.

    1993-01-01

    Catalytic igniters offer the potential for excellent reliability and simplicity for use with the diergolic bipropellant oxygen/hydrogen as well as with the monopropellant hydrazine. State-of-the-art catalyst beds - noble metal/granular pellet carriers - currently used in hydrazine engines are limited by carrier stability, which limits the hot-fire temperature, and by poor thermal response due to the large thermal mass. Moreover, questions remain with regard to longevity and reliability of these catalysts. In this work, Ultramet investigated the feasibility of fabricating monolithic catalyst beds that overcome the limitations of current catalytic igniters via a combination of chemical vapor deposition (CVD) iridium coatings and chemical vapor infiltration (CVI) refractory ceramic foams. It was found that under all flow conditions and O2:H2 mass ratios tested, a high surface area monolithic bed outperformed a Shell 405 bed. Additionally, it was found that monolithic catalytic igniters, specifically porous ceramic foams fabricated by CVD/CVI processing, can be fabricated whose catalytic performance is better than Shell 405 and with significantly lower flow restriction, from materials that can operate at 2000 C or higher.

  10. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  11. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  12. Phased-array antenna control by a monolithic photonic integrated circuit, COMPASS

    SciTech Connect

    Kravitz, S.H.; Hietala, V.M.; Vawter, G.A.; Meyer, W.J.

    1991-01-01

    Phased-array antenna systems are well known for rapid beam steering and their ability to bring high power to the target. Such systems are also quite complex and heavy, which have limited their usefulness. The issues of weight, size, power use, and complexity have been addressed through a system named COMPASS (Coherent Optical Monolithic Phased Array Steering System). All phased-array antenna systems need: (1) small size; (2) low power use; (3) high-speed beam steering; and (4) digitally-controlled phase shifting. COMPASS meets these basic requirements, and provides some very desirable additional features. These are: (1) phase control separate from the transmit/receive module; (2) simple expansion to large arrays; (3) fiber optic interconnect for reduced sensitivity to EMI; (4) an intrinsically radiation-hard GaAs chip; and (5) optical power provided by a commercially available continuous wave (CW) laser. 4 refs., 8 figs.

  13. Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    NASA Astrophysics Data System (ADS)

    Bardi, Marcelo Augusto Gonçalves; Machado, Luci Diva Brocardo

    2012-09-01

    In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films.

  14. Comparisons of exact results for the virtual photon contribution to single hard bremsstrahlung in radiative return for e{sup +}e{sup -} annihilation

    SciTech Connect

    Jadach, S.; Ward, B.F.L.; Yost, S.A.

    2006-04-01

    We compare fully differential exact results for the virtual photon correction to single hard photon bremsstrahlung obtained using independent calculations, both for e{sup +}e{sup -} annihilation at high-energy colliders and for radiative return applications. The results are compared using Monte Carlo evaluations of the matrix elements as well as by direct analytical evaluation of certain critical limits. Special attention is given to the issues of numerical stability and the treatment of finite-mass corrections. It is found that agreement on the order of 10{sup -5} or better is obtained over most of the range of hard photon energies, at CMS energies relevant to both high-energy collisions and radiative return experiments.

  15. ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

    NASA Astrophysics Data System (ADS)

    Mager, M.

    2016-07-01

    A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

  16. Edge chipping and flexural resistance of monolithic ceramics☆

    PubMed Central

    Zhang, Yu; Lee, James J.-W.; Srikanth, Ramanathan; Lawn, Brian R.

    2014-01-01

    Objective Test the hypothesis that monolithic ceramics can be developed with combined esthetics and superior fracture resistance to circumvent processing and performance drawbacks of traditional all-ceramic crowns and fixed-dental-prostheses consisting of a hard and strong core with an esthetic porcelain veneer. Specifically, to demonstrate that monolithic prostheses can be produced with a much reduced susceptibility to fracture. Methods Protocols were applied for quantifying resistance to chipping as well as resistance to flexural failure in two classes of dental ceramic, microstructurally-modified zirconias and lithium disilicate glass–ceramics. A sharp indenter was used to induce chips near the edges of flat-layer specimens, and the results compared with predictions from a critical load equation. The critical loads required to produce cementation surface failure in monolithic specimens bonded to dentin were computed from established flexural strength relations and the predictions validated with experimental data. Results Monolithic zirconias have superior chipping and flexural fracture resistance relative to their veneered counterparts. While they have superior esthetics, glass–ceramics exhibit lower strength but higher chip fracture resistance relative to porcelain-veneered zirconias. Significance The study suggests a promising future for new and improved monolithic ceramic restorations, with combined durability and acceptable esthetics. PMID:24139756

  17. Monolithic tandem solar cell

    DOEpatents

    Wanlass, M.W.

    1994-06-21

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  19. Monolithic microfluidic concentrators and mixers

    DOEpatents

    Frechet, Jean M.; Svec, Frantisek; Yu, Cong; Rohr, Thomas

    2005-05-03

    Microfluidic devices comprising porous monolithic polymer for concentration, extraction or mixing of fluids. A method for in situ preparation of monolithic polymers by in situ initiated polymerization of polymer precursors within microchannels of a microfluidic device and their use for solid phase extraction (SPE), preconcentration, concentration and mixing.

  20. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  1. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  2. Structure for monolithic optical circuits

    NASA Technical Reports Server (NTRS)

    Evanchuk, Vincent L. (Inventor)

    1984-01-01

    A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation sensitive plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

  3. Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process

    NASA Astrophysics Data System (ADS)

    Fernandez-Perez, S.; Backhaus, M.; Fernandez-Garcia, M.; Gallrapp, C.; Hemperek, T.; Kishishita, T.; Krueger, H.; Moll, M.; Padilla, C.; Pernegger, H.

    2016-01-01

    New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology is being extensively investigated for that purpose. This particular technology provides a double well structure, which shields the thin gate oxide transistors from the Buried Oxide (BOX). In addition, the distance between transistors and BOX is one order of magnitude bigger than conventional SOI technologies, making the technology promising against its main limitations, as radiation hardness or back gate effects. Its radiation hardness to Total Ionizing Dose (TID) and the absence of back gate effect up to 700 Mrad has been measured and published [1]. The process allows the use of high voltages (up to 300V) which are used to partially deplete the substrate. The process allows fabrication in higher resistivity, therefore a fully depleted substrate could be achieved after thinning. This article shows the results on charge collection properties of the silicon bulk below the BOX by different techniques, in a laboratory with radioactive sources and by edge Transient Current Technique, for unirradiated and irradiated samples.

  4. Development of an Adaptive Optical System for Sub-10-nm Focusing of Synchrotron Radiation Hard X-rays

    SciTech Connect

    Mimura, H.; Kimura, T.; Matsuyama, S.; Yokoyama, H.; Yumoto, H.

    2011-09-09

    In the hard x-ray region, to obtain the theoretical resolution or diffraction-limited focusing size in an imaging optical system, both ultraprecise optics and highly accurate alignment are necessary. An adaptive optical system is used for the compensation of aberrations in various optical systems, such as optical microscopes and space telescopes. In situ wavefront control of hard x-rays is also effective for realizing ideal performance. The aim of this paper is to develop an adaptive optical system for sub-10-nm hard x-ray focusing. The adaptive optical system performs the wavefront measurement using a phase retrieval algorithm and wavefront control using grazing-incidence deformable mirrors. Several results of experiments using the developed system are reported.

  5. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  6. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  7. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  8. SOI monolithic pixel detector

    NASA Astrophysics Data System (ADS)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  9. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  10. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, Thomas C.

    1993-01-01

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  11. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, T.C.

    1993-03-30

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  12. Luminescence properties of a Lu2O3:Eu3+ nano-phosphor and radiation hardness measurements with a proton beam

    NASA Astrophysics Data System (ADS)

    Oh, Myeongjin; Kim, H. J.; Kim, Sunghwan; Cheon, ChongKyu

    2012-07-01

    Eu3+-doped Lu2O3 phosphors typically have an emission wavelength in the red region. The transition of Eu3+ is due to the 5D0 → 7F2 transition at 610 nm. To produce the Lu2O3:Eu3+ phosphors, we used a co-precipitation method with lutetium nitrate hydrate (Lu(NO3)3·6H2O), europium nitrate hydrate (Eu(NO3)3·6H2O) and diethanolamine (C4H11NO2). The phosphors were sintered at temperatures from 1,100 °C to 1,700 °C by using an electric furnace in an air atmosphere. Then, we obtained the luminescence properties of the phosphors, such as emission and excitation spectra, Field-emission scanning electron microscopy images, X-ray diffraction patterns, radiation hardness, etc. Lu2O3:Eu3+ showed the highest efficiency when sintered at 1,600 °C with a 6%Eu3+ concentration. For the radiation hardness test, a 45-MeV, 10-nA proton beam (MC-50 cyclotron at the KIRMS) was used. Three samples were irradiated with the proton beam: 10, 20, and 40 minutes. The total irradiation dose was approximately 105 ˜ 106 Gy. We did not observe any remarkable changes in the intensity of the luminescence or in the range of the emission wavelength. Hence, we conclude that Lu2O3:Eu3+ phosphors are radiation hard.

  13. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    SciTech Connect

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application.

  14. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  15. Optoelectronic devices toward monolithic integration

    NASA Astrophysics Data System (ADS)

    Ghergia, V.

    1992-12-01

    Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

  16. Rad-hard electronics study for SSC detectors

    SciTech Connect

    Ekenberg, T.; Dawson, J.; Stevens, A.; Haberichter, W.

    1991-01-01

    The radiation environment in a SSC detector operating at a luminosity of 10{sup 33} cm{sup {minus}2}s{sup {minus}1} will put stringent requirements on radiation hardness of the electronics. Over the expected 10 year life-time of a large detector, ionizing radiation doses of up to 20 MRad and neutron fluences of 10{sup 16} neutrons/cm{sup 2} are projected. At a luminosity of 10{sup 34} cm{sup {minus}2}s{sup {minus}1} even higher total doses are expected. the effect of this environment have been simulated by exposing CMOS/bulk and CMOS/SOS devices from monolithic processes to neutrons and ionizing radiation. leakage currents, noise variations, and DC characteristics have been measured before and after exposure in order to evaluate the effects of the irradiations. As expected the device characteristics remained virtually unchanged by neutron irradiation, while ionizing radiation caused moderate degradation of performance. 5 refs., 6 figs.

  17. Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Carteglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnessy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. . Inst. for Particle Physics); Ellison, J.A. ); Ferguson, P. ); Giubellino

    1990-01-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

  18. Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Cartiglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnesy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Tennenbaum, P. . Inst. for Particle Physics); Ellison, J.; Jerger, S.; Lietzke, C.; Wimpenny, S.J. ); Ferguson, P. ); Giubellino, P. )

    1991-04-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. In this paper, the authors report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

  19. Digital radiology using active matrix readout of amorphous selenium: radiation hardness of cadmium selenide thin film transistors.

    PubMed

    Zhao, W; Waechter, D; Rowlands, J A

    1998-04-01

    A flat-panel x-ray imaging detector using active matrix readout of amorphous selenium (a-Se) is being investigated for digital radiography and fluoroscopy. The active matrix consists of a two-dimensional array of thin film transistors (TFTs). Radiation penetrating through the a-Se layer will interact with the TFTs and it is important to ensure that radiation induced changes will not affect the operation of the x-ray imaging detector. The methodology of the present work is to investigate the effects of radiation on the characteristic curves of the TFTs using individual TFT samples made with cadmium selenide (CdSe) semiconductor. Four characteristic parameters, i.e., threshold voltage, subthreshold swing, field effect mobility, and leakage current, were examined. This choice of parameters was based on the well established radiation damage mechanisms for crystalline silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), which have a similar principle of operation as CdSe TFTs. It was found that radiation had no measurable effect on the leakage current and the field effect mobility. However, radiation shifted the threshold voltage and increased the subthreshold swing. But even the estimated lifetime dose (50 Gy) of a diagnostic radiation detector will not affect the normal operation of an active matrix x-ray detector made with CdSe TFTs. The mechanisms of the effects of radiation will be discussed and compared with those for MOSFETs and hydrogenated amorphous silicon (a-Si:H) TFTs. PMID:9571621

  20. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  1. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  2. X-ray emission from cataclysmic variables with accretion disks. I - Hard X-rays. II - EUV/soft X-ray radiation

    NASA Technical Reports Server (NTRS)

    Patterson, J.; Raymond, J. C.

    1985-01-01

    Theoretical models explaining the hard-X-ray, soft-X-ray, and EUV emission of accretion-disk cataclysmic variables in terms of the disk boundary layer (DBL) are developed on the basis of a survey of the published observational data. The data are compared with model predictions in graphs for systems with high or low (greater than or less than 10-Pg/s) accretion rates. Good agreement is obtained both at low accretion rates, where an optically thin rarefied hot (Te = 10 to the 8th K) DBL radiates most of its energy as hard X-rays, and at high accretion rates, where an optically thick 100,000-K DBL radiates most of its energy in the EUV and as soft X-rays. Detailed analysis of the old nova V603 Aql suggests that previous models predicting more detections of soft-X-ray/EUV emissions from thick-DBL objects (Ferland et al., 1982) used inappropriate dwarf masses, interstellar column densities, or classical-nova space densities.

  3. Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes

    SciTech Connect

    Schropp, A.; Hoppe, R.; Patommel, J.; Samberg, D.; Seiboth, F.; Stephan, S.; Schroer, C. G.; Wellenreuther, G.; Falkenberg, G.

    2012-06-18

    We demonstrate x-ray scanning coherent diffraction microscopy (ptychography) with 10 nm spatial resolution, clearly exceeding the resolution limits of conventional hard x-ray microscopy. The spatial resolution in a ptychogram is shown to depend on the shape (structure factor) of a feature and can vary for different features in the object. In addition, the resolution and contrast are shown to increase with increasing coherent fluence. For an optimal ptychographic x-ray microscope, this implies a source with highest possible brilliance and an x-ray optic with a large numerical aperture to generate the optimal probe beam.

  4. Three-dimensional developing flow model for photocatalytic monolith reactors

    SciTech Connect

    Hossain, Md.M.; Raupp, G.B.; Hay, S.O.; Obee, T.N.

    1999-06-01

    A first-principles mathematical model describes performance of a titania-coated honeycomb monolith photocatalytic oxidation (PCO) reactor for air purification. The single-channel, 3-D convection-diffusion-reaction model assumes steady-state operation, negligible axial dispersion, and negligible homogeneous reaction. The reactor model accounts rigorously for entrance effects arising from the developing fluid-flow field and uses a previously developed first-principles radiation-field submodel for the UV flux profile down the monolith length. The model requires specification of an intrinsic photocatalytic reaction rate dependent on local UV light intensity and local reactant concentration, and uses reaction-rate expressions and kinetic parameters determined independently using a flat-plate reactor. Model predictions matched experimental pilot-scale formaldehyde conversion measurements for a range of inlet formaldehyde concentrations, air humidity levels, monolith lengths, and for various monolith/lamp-bank configurations. This agreement was realized without benefit of any adjustable photocatalytic reactor model parameters, radiation-field submodel parameters, or kinetic submodel parameters. The model tends to systematically overpredict toluene conversion data by about 33%, which falls within the accepted limits of experimental kinetic parameter accuracy. With further validation, the model could be used in PCO reactor design and to develop quantitative energy utilization metrics.

  5. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  6. Organic-inorganic hybrid fluorous monolithic capillary column for selective solid-phase microextraction of perfluorinated persistent organic pollutants.

    PubMed

    Xiong, Xiyue; Yang, Zihui; Huang, Yongbin; Jiang, Linbo; Chen, Yingzhuang; Shen, Yao; Chen, Bo

    2013-03-01

    A novel construction strategy of monolithic capillary column for selectively enriching perfluorinated persistent organic pollutants was proposed. The organic-inorganic hybrid fluorous monolithic capillary column was synthesized by a "one-pot" approach via the polycondensation of γ-methacryloxypropyltrimethoxy-silane, then in situ copolymerization of 1H,1H,7H-dodecafluoroheptyl methacrylate and vinyl group on the precondensed siloxanes. The obtained monolithic columns were systematically characterized. The results demonstrated that the optimal column possessed good mechanical stability and high permeability. The adsorption capacities of the optimized monolithic column for perfluorooctanoic acid and perfluorooctane sulfonate were 0.257 and 0.513 μg/mg, respectively. Adsorption capacities of the monoliths were proved to increasing with increasing the amounts of fluorinated monomers in the fluorous monoliths. Sodium 1-octanesulfonate, as a comparison compound, was hardly adsorbed on the fluorous monolith. In addition, the trace amounts of perfluorooctanoic acid and perfluorooctane sulfonate in water samples can be successfully concentrated about 160 times to their original concentrations by this monolithic column. These results demonstrated that the capacity and selectivity of the affinity fluorous column is high and can be applied to the selective enrichment for the perfluorinated persistent organic pollutants from environmental samples. PMID:23378177

  7. Metal/ceramic composite heat pipes for a low-mass, intrinsically-hard 875 K radiator

    NASA Astrophysics Data System (ADS)

    Rosenfeld, John H.; Ernst, Donald M.; Nardone, Vincent C.

    1991-01-01

    Thermacore, Inc. of Lancaster, Pennsylvania has recently completed Phase I of a development program to investigate the use of layered metal/ceramic composites in the design of low-mass hardened radiators for space heat rejection systems. This effort evaluated the use of layered composites as a material to form thin-walled, vacuum leaktight heat pipes. The heat pipes would be incorporated into a large heat pipe radiator for waste heat rejection from a space nuclear power source. This approach forms an attractive alternative to carbon/carbon, or silicon-carbide fiber reinforced metal heat pipes by offering a combination of low mass and improved fabricability. Thermacore and United Technologies Research Center have jointly developed an approach for fabrication of layered composite thin-walled heat pipes for use in hardened space radiators. Potassium heat pipes with wall thicknesses as low a 0.3 mm have been built and tested. Wall thicknesses as low as 0.13 mm are believed to be achievable with this approach.

  8. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  9. X-Ray Ccds for Space Applications: Calibration, Radiation Hardness, and Use for Measuring the Spectrum of the Cosmic X-Ray Background

    NASA Astrophysics Data System (ADS)

    Gendreau, Keith Charles

    1995-01-01

    This thesis has two distinct components. One concerns the physics of the high energy resolution X-ray charge coupled devices (CCD) detectors used to measure the cosmic X-ray background (XRB) spectrum. The other involves the measurements and analysis of the XRB spectrum and instrumental background with these detectors on board the advanced satellite for cosmology and astrophysics (ASCA). The XRB has a soft component and a hard component divided at ~2 keV. The hard component is extremely isotropic, suggesting a cosmological origin. The soft component is extremely anisotropic. A galactic component most likely dominates the soft band with X-ray line emission due to a hot plasma surrounding the solar system. ASCA is one of the first of a class of missions designed to overlap the hard and soft X-ray bands. The X-ray CCD's energy resolution allows us to spectrally separate the galactic and cosmological components. Also, the resolution offers the ability to test several specific cosmological models which would make up the XRB. I have concentrated on models for the XRB origin which include active galactic nuclei (AGN) as principal components. I use ASCA data to put spectral constraints on the AGN synthesis model for the XRB. The instrumental portion of this thesis concerns the development and calibration of the X-ray CCDs. I designed, built and operated an X-ray calibration facility for these detectors. It makes use of a reflection grating spectrometer to measure absolute detection efficiency, characteristic absorption edge strengths, and spectral redistribution in the CCD response function. Part of my thesis research includes a study of radiation damage mechanisms in CCDs. This work revealed radiation damage-induced degradation in the spectral response to X-rays. It also uncovered systematic effects which affect both data analysis and CCD design. I have developed a model involving trap energy levels in the CCD band gap structure. These traps reduce the efficiency in which

  10. A monolithic bolometer array suitable for FIRST

    NASA Technical Reports Server (NTRS)

    Bock, J. J.; LeDuc, H. G.; Lange, A. E.; Zmuidzinas, J.

    1997-01-01

    The development of arrays of infrared bolometers that are suitable for use in the Far Infrared and Submillimeter Telescope (FIRST) mission is reported. The array architecture is based on the silicon nitride micromesh bolometer currently baselined for use in the case of the Planck mission. This architecture allows each pixel to be efficiently coupled to one or both polarizations and to one or more spatial models of radiation. Micromesh structures are currently being developed, coupled with transistor-edge sensors and read out by a SQUID amplifier. If these devices are successful, then the relatively large cooling power available at 300 mK may enable a SQUID-based multiplexer to be integrated on the same wafer as the array, creating a monolithic, fully multiplexed, 2D array with relatively few connections to the sub-Kelvin stage.

  11. Monolithic short wave infrared (SWIR) detector array

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

  12. In situ Fabrication of Monolithic Copper Azide

    NASA Astrophysics Data System (ADS)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  13. Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

    NASA Technical Reports Server (NTRS)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-01-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  14. Thermal Radiometer Signal Processing using Radiation Hard CMOS Application Specific Integrated Circuits for use in Harsh Planetary Environments

    NASA Astrophysics Data System (ADS)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-10-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission [1] require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-cm2/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  15. Development and characterization of monolithic multilayer Laue lens nanofocusing optics

    NASA Astrophysics Data System (ADS)

    Nazaretski, E.; Xu, W.; Bouet, N.; Zhou, J.; Yan, H.; Huang, X.; Chu, Y. S.

    2016-06-01

    We have developed an experimental approach to bond two independent linear Multilayer Laue Lenses (MLLs) together. A monolithic MLL structure was characterized using ptychography at 12 keV photon energy, and we demonstrated 12 nm and 24 nm focusing in horizontal and vertical directions, respectively. Fabrication of 2D MLL optics allows installation of these focusing elements in more conventional microscopes suitable for x-ray imaging using zone plates, and opens easier access to 2D imaging with high spatial resolution in the hard x-ray regime.

  16. Bread-Board Testing of the Radiation Hard Electron Monitor (RADEM) being developed for the ESA JUICE Mission

    NASA Astrophysics Data System (ADS)

    Mrigakshi, Alankrita; Hajdas, Wojtek; Marcinkowski, Radoslaw; Xiao, Hualin; Goncalves, Patricia; Pinto, Marco; Pinto, Costa; Marques, Arlindo; Meier, Dirk

    2016-04-01

    The RADEM instrument will serve as the radiation monitor for the JUICE spacecraft. It will characterize the highly dynamic radiation environment of the Jovian system by measuring the energy spectra of energetic electrons and protons up to 40 MeV and 250 MeV, respectively. It will also determine the directionality of 0.3-10 MeV electrons. Further goals include the detection of heavy ions, and the determination of the corresponding LET spectra and dose rates. Here, the tests of the Electron and Proton Telescopes, and the Directionality Detector of the RADEM Bread-Board model are described. The objective of these tests is to validate RADEM design and physical concept applied therein. The tests were performed at various irradiation facilities at the Paul Scherrer Institute (PSI) where energy ranges relevant for space applications can be covered (electrons: ≤100 MeV and protons: ≤230 MeV). The measured values are also compared with GEANT4 Monte-Carlo Simulation results.

  17. Contact and noncontact laser preparation of hard dental tissues by Er:YAG laser radiation delivered by hollow glass waveguide or articulated arm

    NASA Astrophysics Data System (ADS)

    Dostalova, Tatjana; Jelinkova, Helena; Miyagi, Mitsunobu; Nemec, Michal; Hamal, Karel; Krejsa, Otakar

    1999-05-01

    The differences between a contact and non-contact Er:YAG laser hard dental tissue preparation were verified. The influence of laser energy and number of pulses on a profile and depth of a drilled cavity was investigated. The delivery systems used were an articulated arm and a cyclic olefin polymer-coated silver hollow glass waveguide with or without a special sapphire tip. In the case of the non-contact preparation, the laser radiation was directed onto the dental tissue by focusing optics (CaF2 lens) together with the cooling water spray in order to ensure that the tissues will not be burned. The water spray was also used during the preparation when the waveguide with a sapphire tip was used to deliver the radiation. For the evaluation of shapes, depth and profiles of the prepared cavities the metallographic microscope, photographs from the light microscope and scanning electron microsec were used. From the result it follows that great differences exist in the laser speed, value of energy, the profile, and depth of the cavities prepared by the contact and non-contact preparation. In the case of contact ablation the procedure is quicker, the energy fluence needed is lower and more precise cavities with larger diameters are produced.

  18. Development of a compact radiation-hardened low-noise front-end readout ASIC for CZT-based hard X-ray imager

    NASA Astrophysics Data System (ADS)

    Gao, W.; Gan, B.; Li, X.; Wei, T.; Gao, D.; Hu, Y.

    2015-04-01

    In this paper, we present the development and performances of a radiation-hardened front-end readout application-specific integrated circuit (ASIC) dedicated to CZT detectors for a hard X-ray imager in space applications. The readout channel consists of a charge sensitive amplifier (CSA), a CR-RC shaper, a fast shaper, a discriminator and a driving buffer. With the additional digital filtering, the readout channel can achieve very low noise performances and low power dissipation. An eight-channel prototype ASIC is designed and fabricated in 0.35 μm CMOS process. The energy range of the detected X-rays is evaluated as 1.45 keV to 281 keV. The gain is larger than 100 mV/fC. The equivalent noise charge (ENC) of the ASIC is 53 e- at zero farad plus 10 e- per picofarad. The power dissipation is less than 4.4 mW/channel. Through the measurement with a CZT detector, the energy resolution is less than 3.45 keV (FWHM) under the irradiation of the radioactive source 241Am. The radiation effect experiments indicate that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad (Si).

  19. The effect of hard/soft segment composition on radiation stability of poly(ester-urethane)s

    NASA Astrophysics Data System (ADS)

    Walo, Marta; Przybytniak, Grażyna; Łyczko, Krzysztof; Piątek-Hnat, Marta

    2014-01-01

    In this paper studies on the structures and radiation stability of four poly(ester-urethane)s (PUR)s synthesized from oligo(ethylene-butylene adipate)diol of various molecular weights and isophorone diisocyanate/1,4-butanediol are reported. PURs with 40 and 60 wt% soft segments were irradiated at ambient temperature with a high energy electron beam to a dose of 112 kGy. The effect of different segmental compositions on thermal and mechanical properties of polyurethanes, both before and after irradiation, were investigated using mechanical testing and dynamic mechanical thermal analysis. ATR-FTIR spectroscopy was used to study the progress of polycondensation, structure of synthesized polymers and extent of phase separation were determined on a basis of the contribution of hydrogen bonding in poly(ester-urethane)s. Correlation between degree of phase separation and mechanical and thermal properties of poly(ester-urethane)s was found.

  20. Monolithic-integrated microlaser encoder.

    PubMed

    Sawada, R; Higurashi, E; Ito, T; Ohguchi, O; Tsubamoto, M

    1999-11-20

    We have developed an extremely small integrated microencoder whose sides are less than 1 mm long. It is 1/100 the size of conventional encoders. This microencoder consists of a laser diode, monolithic photodiodes, and fluorinated polyimide waveguides with total internal reflection mirrors. The instrument can measure the relative displacement between a grating scale and the encoder with a resolution of the order of 0.01 microm; it can also determine the direction in which the scale is moving. By using the two beams that were emitted from the two etched mirrors of the laser diode, by monolithic integration of the waveguide and photodiodes, and by fabrication of a step at the edge of the waveguide, we were able to eliminate conventional bulky optical components such as the beam splitter, the quarter-wavelength plate, bulky mirrors, and bulky photodetectors. PMID:18324228

  1. Monolithic Fuel Fabrication Process Development

    SciTech Connect

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  2. Monolithic pattern-sensitive detector

    DOEpatents

    Berger, Kurt W.

    2000-01-01

    Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

  3. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  4. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Astrophysics Data System (ADS)

    Dinetta, L. C.; Hannon, M. H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  5. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions. PMID:15354560

  6. High conductance ohmic junction for monolithic semiconductor devices

    NASA Technical Reports Server (NTRS)

    Lewis, Carol R. (Inventor)

    1988-01-01

    In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.

  7. Monolithic millimeter-wave and picosecond electronic technologies

    SciTech Connect

    Talley, W.K.; Luhmann, N.C.

    1996-03-12

    Theoretical and experimental studies into monolithic millimeter-wave and picosecond electronic technologies have been undertaken as a collaborative project between the Lawrence Livermore National Laboratory (LLNL) and the University of California Department of Applied Science Coherent Millimeter-Wave Group under the auspices of the Laboratory Directed Research and Development Program at LLNL. The work involves the design and fabrication of monolithic frequency multiplier, beam control, and imaging arrays for millimeter-wave imaging and radar, as well as the development of high speed nonlinear transmission lines for ultra-wideband radar imaging, time domain materials characterization and magnetic fusion plasma applications. In addition, the Coherent Millimeter-Wave Group is involved in the fabrication of a state-of-the-art X-band ({approximately}8-11 GHz) RF photoinjector source aimed at producing psec high brightness electron bunches for advanced accelerator and coherent radiation generation studies.

  8. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.

    2004-08-31

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by either fluid or gas pressure against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  9. Mobile Monolith Polymer Elements For Flow Control In Microfluidic Systems

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2006-01-24

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  10. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2005-11-11

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.