Evaluation of thermal gradients in longitudinal spin Seebeck effect measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sola, A., E-mail: a.sola@inrim.it; Kuepferling, M.; Basso, V.

2015-05-07

In the framework of the longitudinal spin Seebeck effect (LSSE), we developed an experimental setup for the characterization of LSSE devices. This class of device consists in a layered structure formed by a substrate, a ferrimagnetic insulator (YIG) where the spin current is thermally generated, and a paramagnetic metal (Pt) for the detection of the spin current via the inverse spin-Hall effect. In this kind of experiments, the evaluation of a thermal gradient through the thin YIG layer is a crucial point. In this work, we perform an indirect determination of the thermal gradient through the measurement of the heatmore » flux. We developed an experimental setup using Peltier cells that allow us to measure the heat flux through a given sample. In order to test the technique, a standard LSSE device produced at Tohoku University was measured. We find a spin Seebeck S{sub SSE} coefficient of 2.8×10{sup −7} V K{sup −1}.« less

Skyrmionic spin Seebeck effect via dissipative thermomagnonic torques

NASA Astrophysics Data System (ADS)

Kovalev, Alexey A.

2014-06-01

We derive thermomagnonic torque and its "β-type" dissipative correction from the stochastic Landau-Lifshitz-Gilbert equation. The β-type dissipative correction describes viscous coupling between magnetic dynamics and magnonic current and it stems from spin mistracking of the magnetic order. We show that thermomagnonic torque is important for describing temperature gradient induced motion of skyrmions in helical magnets while dissipative correction plays an essential role in generating transverse Magnus force. We propose to detect such skyrmionic motion by employing the transverse spin Seebeck effect geometry.

Spin Seebeck devices using local on-chip heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M.; Fradin, Frank Y.; Hoffman, Jason

2015-05-07

A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe3O4 (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique, it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. By using themore » spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.« less

Spin Seebeck devices using local on-chip heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M., E-mail: swu@anl.gov; Fradin, Frank Y.; Hoffman, Jason

2015-05-07

A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe{sub 3}O{sub 4} (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique, it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. Bymore » using the spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.« less

Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials

NASA Astrophysics Data System (ADS)

Mohammadi, Yawar

2018-04-01

Employing the Landauer-Buttiker formula we investigate the spin and valley dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band structure are modulated by local application of a gate voltage and off-resonant circularly polarized light. We calculate the charge, spin and valley Seebeck coefficients of an irradiated LBDM as functions of electronic doping, light intensity and the amount of the electric field in the linear regime. Our calculation reveal that all Seebeck coefficients always shows an odd features with respect to the chemical potential. Moreover, we show that, due to the strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the irradiated LBDMs is spin polarized, and can also become valley polarized if the gate voltage is applied too. It is also found that the valley (spin) polarization of the induced thermovoltage could be inverted by reversing the circular polarization of light or reversing the direction the electric field (only by reversing the circular polarization of light).

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

NASA Astrophysics Data System (ADS)

Bhardwaj, Ravindra G.; Lou, Paul C.; Kumar, Sandeep

2018-01-01

The development of spintronics and spin-caloritronics devices needs efficient generation, detection, and manipulation of spin current. The thermal spin current from the spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. However, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without a heavy metal spin detector. p-Si, having a centrosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling, leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for the detection of spin-Seebeck effects, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to the Ni80Fe20 layer due to the thermal spin galvanic effect and the spin-Hall effect, causing spin-orbit torques. The thermal spin-orbit torques lead to collapse of magnetic hysteresis of the 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

Absence of anomalous Nernst effect in spin Seebeck effect of Pt/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miao, B. F., E-mail: bfmiao@nju.edu.cn; Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD 21218; Huang, S. Y.

2016-01-15

The Pt/YIG structure has been widely used to study spin Seebeck effect (SSE), inverse spin Hall effect, and other pure spin current phenomena. However, the magnetic proximity effect in Pt when in contact with YIG, and the potential anomalous Nernst effect (ANE) may compromise the spin current phenomena in Pt/YIG. By inserting a Cu layer of various thicknesses between Pt and YIG, we have separated the signals from the SSE and that of the ANE. It is demonstrated that the thermal voltage in Pt/YIG mainly comes from spin current due to the longitudinal SSE with negligible contribution from the ANE.

Nanoscale Seebeck effect at hot metal nanostructures

NASA Astrophysics Data System (ADS)

Ly, Aboubakry; Majee, Arghya; Würger, Alois

2018-02-01

We theoretically study the electrolyte Seebeck effect in the vicinity of a heated metal nanostructure, such as the cap of an active Janus colloid in an electrolyte, or gold-coated interfaces in optofluidic devices. The thermocharge accumulated at the surface varies with the local temperature, thus modulating the diffuse part of the electric double layer. On a conducting surface with non-uniform temperature, the isopotential condition imposes a significant polarization charge within the metal. Surprisingly, this does not affect the slip velocity, which takes the same value on insulating and conducting surfaces. Our results for specific-ion effects agree qualitatively with recent observations for Janus colloids in different electrolyte solutions. Comparing the thermal, hydrodynamic, and ion diffusion time scales, we expect a rich transient behavior at the onset of thermally powered swimming, extending to microseconds after switching on the heating.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; Li, Yufan; Qu, D.

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433; Li, Yufan

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

Absence of anomalous Nernst effect in spin Seebeck effect of Pt/YIG

DOE PAGES

Miao, B. F.; Huang, S. Y.; Qu, D.; ...

2016-01-29

The Pt/YIG structure has been widely used to study spin Seebeck effect (SSE), inverse spin Hall effect, and other pure spin current phenomena. However, the magnetic proximity effect in Pt when in contact with YIG, and the potential anomalous Nernst effect (ANE) may compromise the spin current phenomena in Pt/YIG. By inserting a Cu layer of various thicknesses between Pt and YIG, we have separated the signals from the SSE and that of the ANE. Here, it is demonstrated that the thermal voltage in Pt/YIG mainly comes from spin current due to the longitudinal SSE with negligible contribution from themore » ANE.« less

Spin-dependent Seebeck effects in a graphene superlattice p-n junction with different shapes

NASA Astrophysics Data System (ADS)

Zhou, Benhu; Zhou, Benliang; Yao, Yagang; Zhou, Guanghui; Hu, Ming

2017-10-01

We theoretically calculate the spin-dependent transmission probability and spin Seebeck coefficient for a zigzag-edge graphene nanoribbon p-n junction with periodically attached stubs under a perpendicular magnetic field and a ferromagnetic insulator. By using the nonequilibrium Green’s function method combining with the tight-binding Hamiltonian, it is demonstrated that the spin-dependent transmission probability and spin Seebeck coefficient for two types of superlattices can be modulated by the potential drop, the magnetization strength, the number of periods of the superlattice, the strength of the perpendicular magnetic field, and the Anderson disorder strength. Interestingly, a metal to semiconductor transition occurs as the number of the superlattice for a crossed superlattice p-n junction increases, and its spin Seebeck coefficient is much larger than that for the T-shaped one around the zero Fermi energy. Furthermore, the spin Seebeck coefficient for crossed systems can be much pronounced and their maximum absolute value can reach 528 μV K-1 by choosing optimized parameters. Besides, the spin Seebeck coefficient for crossed p-n junction is strongly enhanced around the zero Fermi energy for a weak magnetic field. Our results provide theoretical references for modulating the thermoelectric properties of a graphene superlattice p-n junction by tuning its geometric structure and physical parameters.

The Seebeck coefficient of superionic conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahan, G. D.

2015-01-28

We present a theory of the anomalous Seebeck coefficient found in the superionic conductor Cu{sub 2}Se. It has a phase transition at T = 400 K where the cations disorder but the anions do not. This disorder gives a temperature-dependent width to the electronic states in the conduction band. This width provides the anomalous Seebeck contribution.

Transverse spin Seebeck effect versus anomalous and planar Nernst effects in Permalloy thin films.

PubMed

Schmid, M; Srichandan, S; Meier, D; Kuschel, T; Schmalhorst, J-M; Vogel, M; Reiss, G; Strunk, C; Back, C H

2013-11-01

Transverse magnetothermoelectric effects are studied in Permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiN(x) membranes. The transverse voltage along platinum strips patterned on top of the Permalloy films is measured versus the external magnetic field as a function of the angle and temperature gradients. After the identification of the contribution of the planar and anomalous Nernst effects, we find an upper limit for the transverse spin Seebeck effect, which is several orders of magnitude smaller than previously reported.

Half-metallic properties, single-spin negative differential resistance, and large single-spin Seebeck effects induced by chemical doping in zigzag-edged graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xi-Feng; Zhou, Wen-Qian; Hong, Xue-Kun

2015-01-14

Ab initio calculations combining density-functional theory and nonequilibrium Green’s function are performed to investigate the effects of either single B atom or single N atom dopant in zigzag-edged graphene nanoribbons (ZGNRs) with the ferromagnetic state on the spin-dependent transport properties and thermospin performances. A spin-up (spin-down) localized state near the Fermi level can be induced by these dopants, resulting in a half-metallic property with 100% negative (positive) spin polarization at the Fermi level due to the destructive quantum interference effects. In addition, the highly spin-polarized electric current in the low bias-voltage regime and single-spin negative differential resistance in the highmore » bias-voltage regime are also observed in these doped ZGNRs. Moreover, the large spin-up (spin-down) Seebeck coefficient and the very weak spin-down (spin-up) Seebeck effect of the B(N)-doped ZGNRs near the Fermi level are simultaneously achieved, indicating that the spin Seebeck effect is comparable to the corresponding charge Seebeck effect.« less

Apparatus Tests Thermocouples For Seebeck Inhomogeneity

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; Bauserman, Willard A., Jr.; West, James W.

1995-01-01

Automated apparatus reveals sources of error not revealed in calibration. Computer-controlled apparatus detects and measures Seebeck inhomogeneities in sheathed thermocouples. Measures thermocouple output voltage as function of position of probe along sharp gradient of temperature. Abnormal variations in voltage-versus-position data indicative of Seebeck inhomogeneities. Prototype for development of standard method and equipment for routine acceptance/rejection testing of sheathed thermocouples in industrial and research laboratories.

Seebeck Effects in N-Type and P-Type Polymers Driven Simultaneously by Surface Polarization and Entropy Differences Based on Conductor/Polymer/Conductor Thin-Film Devices

DOE PAGES

Hu, Dehua; Liu, Qing; Tisdale, Jeremy; ...

2015-04-15

This paper reports Seebeck effects driven by both surface polarization difference and entropy difference by using intramolecular charge-transfer states in n-type and p-type conjugated polymers, namely IIDT and IIDDT, based on vertical conductor/polymer/conductor thin-film devices. Large Seebeck coefficients of -898 V/K and 1300 V/K from are observed from n-type IIDT p-type IIDDT, respectively, when the charge-transfer states are generated by a white light illumination of 100 mW/cm2. Simultaneously, electrical conductivities are increased from almost insulating states in dark condition to conducting states under photoexcitation in both n-type IIDT and p-type IIDDT devices. We find that the intramolecular charge-transfer states canmore » largely enhance Seebeck effects in the n-type IIDT and p-type IIDDT devices driven by both surface polarization difference and entropy difference. Furthermore, the Seebeck effects can be shifted between polarization and entropy regimes when electrical conductivities are changed. This reveals a new concept to develop Seebeck effects by controlling polarization and entropy regimes based on charge-transfer states in vertical conductor/polymer/conductor thin-film devices.« less

Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling

PubMed Central

Bathen, Marianne Etzelmüller; Linder, Jacob

2017-01-01

We theoretically consider the spin Seebeck effect, the charge Seebeck coefficient, and the thermoelectric figure of merit in superconducting hybrid structures including either magnetic textures or intrinsic spin-orbit coupling. We demonstrate that large magnitudes for all these quantities are obtainable in Josephson-based systems with either zero or a small externally applied magnetic field. This provides an alternative to the thermoelectric effects generated in high-field (~1 T) superconducting hybrid systems, which were recently experimentally demonstrated. The systems studied contain either conical ferromagnets, spin-active interfaces, or spin-orbit coupling. We present a framework for calculating the linear thermoelectric response for both spin and charge of a system upon applying temperature and voltage gradients based on quasiclassical theory which allows for arbitrary spin-dependent textures and fields to be conveniently incorporated. PMID:28139667

Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling.

PubMed

Bathen, Marianne Etzelmüller; Linder, Jacob

2017-01-31

We theoretically consider the spin Seebeck effect, the charge Seebeck coefficient, and the thermoelectric figure of merit in superconducting hybrid structures including either magnetic textures or intrinsic spin-orbit coupling. We demonstrate that large magnitudes for all these quantities are obtainable in Josephson-based systems with either zero or a small externally applied magnetic field. This provides an alternative to the thermoelectric effects generated in high-field (~1 T) superconducting hybrid systems, which were recently experimentally demonstrated. The systems studied contain either conical ferromagnets, spin-active interfaces, or spin-orbit coupling. We present a framework for calculating the linear thermoelectric response for both spin and charge of a system upon applying temperature and voltage gradients based on quasiclassical theory which allows for arbitrary spin-dependent textures and fields to be conveniently incorporated.

Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

NASA Astrophysics Data System (ADS)

Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

2018-04-01

In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levin, E. M.

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides

DOE PAGES

Levin, E. M.

2016-06-27

Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1, depends on both n and m* as 1/T 1~(m*) 3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown thatmore » the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag xSb xGe 50–2xTe 50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

Scanning measurement of Seebeck coefficient of a heated sample

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snyder, G. Jeffrey; Iwanaga, Shiho

2016-04-19

A novel scanning Seebeck coefficient measurement technique is disclosed utilizing a cold scanning thermocouple probe tip on heated bulk and thin film samples. The system measures variations in the Seebeck coefficient within the samples. The apparatus may be used for two dimensional mapping of the Seebeck coefficient on the bulk and thin film samples. This technique can be utilized for detection of defective regions, as well as phase separations in the sub-mm range of various thermoelectric materials.

Origin of the spin Seebeck effect in compensated ferrimagnets

PubMed Central

Geprägs, Stephan; Kehlberger, Andreas; Coletta, Francesco Della; Qiu, Zhiyong; Guo, Er-Jia; Schulz, Tomek; Mix, Christian; Meyer, Sibylle; Kamra, Akashdeep; Althammer, Matthias; Huebl, Hans; Jakob, Gerhard; Ohnuma, Yuichi; Adachi, Hiroto; Barker, Joseph; Maekawa, Sadamichi; Bauer, Gerrit E. W.; Saitoh, Eiji; Gross, Rudolf; Goennenwein, Sebastian T. B.; Kläui, Mathias

2016-01-01

Magnons are the elementary excitations of a magnetically ordered system. In ferromagnets, only a single band of low-energy magnons needs to be considered, but in ferrimagnets the situation is more complex owing to different magnetic sublattices involved. In this case, low lying optical modes exist that can affect the dynamical response. Here we show that the spin Seebeck effect (SSE) is sensitive to the complexities of the magnon spectrum. The SSE is caused by thermally excited spin dynamics that are converted to a voltage by the inverse spin Hall effect at the interface to a heavy metal contact. By investigating the temperature dependence of the SSE in the ferrimagnet gadolinium iron garnet, with a magnetic compensation point near room temperature, we demonstrate that higher-energy exchange magnons play a key role in the SSE. PMID:26842873

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

DOE PAGES

Wu, Stephen M.; Hoffman, Jason; Pearson, John E.; ...

2014-09-05

In this paper, the longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3O 4 with the ferromagnetic metal Co 0.2Fe 0.6B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between themore » two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. Finally, these experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.« less

Enhancement of Seebeck coefficient in graphene superlattices by electron filtering technique

NASA Astrophysics Data System (ADS)

Mishra, Shakti Kumar; Kumar, Amar; Kaushik, Chetan Prakash; Dikshit, Biswaranjan

2018-01-01

We show theoretically that the Seebeck coefficient and the thermoelectric figure of merit can be increased by using electron filtering technique in graphene superlattice based thermoelectric devices. The average Seebeck coefficient for graphene-based thermoelectric devices is proportional to the integral of the distribution of Seebeck coefficient versus energy of electrons. The low energy electrons in the distribution curve are found to reduce the average Seebeck coefficient as their contribution is negative. We show that, with electron energy filtering technique using multiple graphene superlattice heterostructures, the low energy electrons can be filtered out and the Seebeck coefficient can be increased. The multiple graphene superlattice heterostructures can be formed by graphene superlattices with different periodic electric potentials applied above the superlattice. The overall electronic band gap of the multiple heterostructures is dependent upon the individual band gap of the graphene superlattices and can be tuned by varying the periodic electric potentials. The overall electronic band gap of the multiple heterostructures has to be properly chosen such that, the low energy electrons which cause negative Seebeck distribution in single graphene superlattice thermoelectric devices fall within the overall band gap formed by the multiple heterostructures. Although the electrical conductance is decreased in this technique reducing the thermoelectric figure of merit, the overall figure of merit is increased due to huge increase in Seebeck coefficient and its square dependency upon the Seebeck coefficient. This is an easy technique to make graphene superlattice based thermoelectric devices more efficient and has the potential to significantly improve the technology of energy harvesting and sensors.

Longitudinal spin Seebeck effect in various garnet ferrites

NASA Astrophysics Data System (ADS)

Uchida, K.; Nonaka, T.; Kikkawa, T.; Kajiwara, Y.; Saitoh, E.

2013-03-01

The longitudinal spin Seebeck effect (LSSE) is investigated in various garnet ferrites Y3-xRxFe5-yMyO12 (R=Gd, Ca; M=Al, Mn, V, In, Zr) by means of the inverse spin Hall effect in Pt films. The magnitude of the LSSE voltage in the Pt/Y3-xRxFe5-yMyO12 samples is found to be enhanced with increasing concentration of Fe in the garnet ferrites, which can be explained by a change in the spin-mixing conductance at the Pt/Y3-xRxFe5-yMyO12 interfaces. We also investigate the dependence of the LSSE voltage on macroscopic magnetic parameters of Y3-xRxFe5-yMyO12. The experimental results show that the LSSE voltage in the Pt/Y3-xRxFe5-yMyO12 samples has a positive correlation with the Curie temperature and the saturation magnetization, but no clear correlation with the gyromagnetic ratio and the Gilbert damping constant of the samples.

Spectral characteristics of time resolved magnonic spin Seebeck effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etesami, S. R.; Chotorlishvili, L.; Berakdar, J.

2015-09-28

Spin Seebeck effect (SSE) holds promise for new spintronic devices with low-energy consumption. The underlying physics, essential for a further progress, is yet to be fully clarified. This study of the time resolved longitudinal SSE in the magnetic insulator yttrium iron garnet concludes that a substantial contribution to the spin current stems from small wave-vector subthermal exchange magnons. Our finding is in line with the recent experiment by S. R. Boona and J. P. Heremans [Phys. Rev. B 90, 064421 (2014)]. Technically, the spin-current dynamics is treated based on the Landau-Lifshitz-Gilbert equation also including magnons back-action on thermal bath, whilemore » the formation of the time dependent thermal gradient is described self-consistently via the heat equation coupled to the magnetization dynamics.« less

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

PubMed

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

First-principles simulation on Seebeck coefficient in silicon nanowires

NASA Astrophysics Data System (ADS)

Nakamura, Koichi

2017-06-01

The Seebeck coefficients of silicon nanowires (SiNWs) were simulated on the basis of first-principles calculation using various atomistic structure models. The electronic band structures of fully hydrogen-terminated SiNW models give the correct image of quantum mechanical confinement from bulk silicon to SiNW for each axial direction, and the change in the density of states by dimensional reduction to SiNW enhances the thermoelectric performance in terms of the Seebeck coefficient, compared with those of bulk silicon and silicon nanosheets. The uniaxial tensile strain for the SiNW models does not strongly affect the Seebeck coefficient even for the SiNW system with giant piezoresistivity. In contrast, dangling bonds on a wire wall sharply reduce the Seebeck coefficient of SiNW and totally degrade thermoelectric performance from the viewpoint of the power factor. The exclusion of dangling bonds is a key element for the design and application of high-performance thermoelectric nanowires of semiconducting materials.

Seebeck Coefficient Metrology: Do Contemporary Protocols Measure Up?

NASA Astrophysics Data System (ADS)

Martin, Joshua; Wong-Ng, Winnie; Green, Martin L.

2015-06-01

Comparative measurements of the Seebeck coefficient are challenging due to the diversity of instrumentation and measurement protocols. With the implementation of standardized measurement protocols and the use of Standard Reference Materials (SRMs®), for example, the recently certified National Institute of Standards and Technology (NIST) SRM® 3451 ``Low Temperature Seebeck Coefficient Standard (10-390 K)'', researchers can reliably analyze and compare data, both intra- and inter-laboratory, thereby accelerating the development of more efficient thermoelectric materials and devices. We present a comparative overview of commonly adopted Seebeck coefficient measurement practices. First, we examine the influence of asynchronous temporal and spatial measurement of electric potential and temperature. Temporal asynchronicity introduces error in the absolute Seebeck coefficient of the order of ≈10%, whereas spatial asynchronicity introduces error of the order of a few percent. Second, we examine the influence of poor thermal contact between the measurement probes and the sample. This is especially critical at high temperature, wherein the prevalent mode of measuring surface temperature is facilitated by pressure contact. Each topic will include the comparison of data measured using different measurement techniques and using different probe arrangements. We demonstrate that the probe arrangement is the primary limit to high accuracy, wherein the Seebeck coefficients measured by the 2-probe arrangement and those measured by the 4-probe arrangement diverge with the increase in temperature, approaching ≈14% at 900 K. Using these analyses, we provide recommended measurement protocols to guide members of the thermoelectric materials community in performing more accurate measurements and in evaluating more comprehensive uncertainty limits.

System to Measure Thermal Conductivity and Seebeck Coefficient for Thermoelectrics

NASA Technical Reports Server (NTRS)

Kim, Hyun-Jung; Skuza, Jonathan R.; Park, Yeonjoon; King, Glen C.; Choi, Sang H.; Nagavalli, Anita

2012-01-01

The Seebeck coefficient, when combined with thermal and electrical conductivity, is an essential property measurement for evaluating the potential performance of novel thermoelectric materials. However, there is some question as to which measurement technique(s) provides the most accurate determination of the Seebeck coefficient at elevated temperatures. This has led to the implementation of nonstandardized practices that have further complicated the confirmation of reported high ZT materials. The major objective of the procedure described is for the simultaneous measurement of the Seebeck coefficient and thermal diffusivity within a given temperature range. These thermoelectric measurements must be precise, accurate, and reproducible to ensure meaningful interlaboratory comparison of data. The custom-built thermal characterization system described in this NASA-TM is specifically designed to measure the inplane thermal diffusivity, and the Seebeck coefficient for materials in the ranging from 73 K through 373 K.

A rapid method to extract Seebeck coefficient under a large temperature difference

NASA Astrophysics Data System (ADS)

Zhu, Qing; Kim, Hee Seok; Ren, Zhifeng

2017-09-01

The Seebeck coefficient is one of the three important properties in thermoelectric materials. Since thermoelectric materials usually work under large temperature difference in real applications, we propose a quasi-steady state method to accurately measure the Seebeck coefficient under large temperature gradient. Compared to other methods, this method is not only highly accurate but also less time consuming. It can measure the Seebeck coefficient in both the temperature heating up and cooling down processes. In this work, a Zintl material (Mg3.15Nb0.05Sb1.5Bi0.49Te0.01) was tested to extract the Seebeck coefficient from room temperature to 573 K. Compared with a commercialized Seebeck coefficient measurement device (ZEM-3), there is ±5% difference between those from ZEM-3 and this method.

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M., E-mail: swu@anl.gov; Hoffman, Jason; Pearson, John E.

2014-09-01

The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe{sub 3}O{sub 4} with the ferromagnetic metal Co{sub 0.2}Fe{sub 0.6}B{sub 0.2} (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe{sub 3}O{sub 4} into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, itmore » is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. These experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.« less

Effect of mesoporous structure on the Seebeck coefficient and electrical properties of SrTi0.8Nb0.2O3

NASA Astrophysics Data System (ADS)

Park, Chang-Sun; Hong, Min-Hee; Cho, Hyung Hee; Park, Hyung-Ho

2017-07-01

The porosity of mesoporous SrTi0.8Nb0.2O3 (STNO) was controlled by changing the surfactant concentration to investigate the porosity effect on the thermoelectric properties. Mesoporous structure typically induces a large decrease in the carrier mobility and a small increase in the carrier concentration owing to carrier scattering and oxygen vacancies. These changes in the carrier mobility and concentration induce a change in the thermoelectric properties by enhancing the Seebeck coefficient owing to an increase in the electrical resistivity and carrier filtering effect. Brij-S10 surfactant induces a carrier filtering effect in STNO, and so the Seebeck coefficient could be enhanced even with increasing carrier concentration. Because the Seebeck coefficient affects the power factor more strongly than the electrical resistivity does, incorporation of Brij-S10 surfactant into STNO films increases the power factor. The maximum value of the power factor, approximately 2.2 × 10-4 W/mK2 at 200 °C, was obtained at a Brij-S10 molar ratio of 0.075. From this result, we can expect the application of STNO as a thermoelectric material with an enhanced power factor through successful adoption of mesoporous structure.

Rectifying full-counting statistics in a spin Seebeck engine

NASA Astrophysics Data System (ADS)

Tang, Gaomin; Chen, Xiaobin; Ren, Jie; Wang, Jian

2018-02-01

In terms of the nonequilibrium Green's function framework, we formulate the full-counting statistics of conjugate thermal spin transport in a spin Seebeck engine, which is made by a metal-ferromagnet insulator interface driven by a temperature bias. We obtain general expressions of scaled cumulant generating functions of both heat and spin currents that hold special fluctuation symmetry relations, and demonstrate intriguing properties, such as rectification and negative differential effects of high-order fluctuations of thermal excited spin current, maximum output spin power, and efficiency. The transport and noise depend on the strongly fluctuating electron density of states at the interface. The results are relevant for designing an efficient spin Seebeck engine and can broaden our view in nonequilibrium thermodynamics and the nonlinear phenomenon in quantum transport systems.

Spin Seebeck insulator.

PubMed

Uchida, K; Xiao, J; Adachi, H; Ohe, J; Takahashi, S; Ieda, J; Ota, T; Kajiwara, Y; Umezawa, H; Kawai, H; Bauer, G E W; Maekawa, S; Saitoh, E

2010-11-01

Thermoelectric generation is an essential function in future energy-saving technologies. However, it has so far been an exclusive feature of electric conductors, a situation which limits its application; conduction electrons are often problematic in the thermal design of devices. Here we report electric voltage generation from heat flowing in an insulator. We reveal that, despite the absence of conduction electrons, the magnetic insulator LaY(2)Fe(5)O(12) can convert a heat flow into a spin voltage. Attached Pt films can then transform this spin voltage into an electric voltage as a result of the inverse spin Hall effect. The experimental results require us to introduce a thermally activated interface spin exchange between LaY(2)Fe(5)O(12) and Pt. Our findings extend the range of potential materials for thermoelectric applications and provide a crucial piece of information for understanding the physics of the spin Seebeck effect.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

NASA Astrophysics Data System (ADS)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Spin Seebeck effect and thermal colossal magnetoresistance in Christmas-tree silicene nanoribbons

NASA Astrophysics Data System (ADS)

Gao, Xiu-Jin; Zhao, Peng; Chen, Gang

2018-05-01

Based on the density functional theory and nonequilibrium Green's function method, we investigate the electronic structures and thermal spin transport properties of Christmas-tree silicene nanoribbons (CSiNRs). The results show that CSiNRs have ferromagnetic ground state with high Curie temperature far above the room temperature. Obvious spin Seebeck effect with spin-up and spin-down currents flowing in opposite directions by a temperature gradient can be observed in these systems. Furthermore, a thermal colossal magnetoresistance up to 109% can be realized by tuning the external magnetic field. The results show that CSiNRs hold great potential in designing spin caloritronic devices.

125Te NMR and Seebeck Effect in Bi 2Te 3 Synthesized from Stoichiometric and Te-Rich Melts

DOE PAGES

Levin, E. M.; Iowa State Univ., Ames, IA; Riedemann, T. M.; ...

2016-10-14

Bi 2Te 3 is a well-known thermoelectric material and, as a new form of quantum matter, a topological insulator. Variation of local chemical composition in Bi2Te3 results in formation of several types of atomic defects, including Bi and Te vacancies and Bi and Te antisite defects; these defects can strongly affect material functionality via generation of free electrons and/or holes. Nonuniform distribution of atomic defects produces electronic inhomogeneity, which can be detected by 125Te nuclear magnetic resonance (NMR). Here we report on 125Te NMR and Seebeck effect (heat to electrical energy conversion) for two single crystalline samples: (#1) grown frommore » stoichiometric composition by Bridgman technique and (#2) grown out of Te-rich, high temperature flux. The Seebeck coefficients of these samples show p- and n-type conductivity, respectively, arising from different atomic defects. 125Te NMR spectra and spin–lattice relaxation measurements demonstrate that both Bi 2Te 3 samples are electronically inhomogeneous at the atomic scale, which can be attributed to a different Te environment due to spatial variation of the Bi/Te ratio and formation of atomic defects. In conclusion, correlations between 125Te NMR spectra, spin–lattice relaxation times, the Seebeck coefficients, carrier concentrations, and atomic defects are discussed. Our data demonstrate that 125Te NMR is an effective probe to study antisite defects in Bi 2Te 3.« less

125Te NMR and Seebeck Effect in Bi 2Te 3 Synthesized from Stoichiometric and Te-Rich Melts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levin, E. M.; Iowa State Univ., Ames, IA; Riedemann, T. M.

Bi 2Te 3 is a well-known thermoelectric material and, as a new form of quantum matter, a topological insulator. Variation of local chemical composition in Bi2Te3 results in formation of several types of atomic defects, including Bi and Te vacancies and Bi and Te antisite defects; these defects can strongly affect material functionality via generation of free electrons and/or holes. Nonuniform distribution of atomic defects produces electronic inhomogeneity, which can be detected by 125Te nuclear magnetic resonance (NMR). Here we report on 125Te NMR and Seebeck effect (heat to electrical energy conversion) for two single crystalline samples: (#1) grown frommore » stoichiometric composition by Bridgman technique and (#2) grown out of Te-rich, high temperature flux. The Seebeck coefficients of these samples show p- and n-type conductivity, respectively, arising from different atomic defects. 125Te NMR spectra and spin–lattice relaxation measurements demonstrate that both Bi 2Te 3 samples are electronically inhomogeneous at the atomic scale, which can be attributed to a different Te environment due to spatial variation of the Bi/Te ratio and formation of atomic defects. In conclusion, correlations between 125Te NMR spectra, spin–lattice relaxation times, the Seebeck coefficients, carrier concentrations, and atomic defects are discussed. Our data demonstrate that 125Te NMR is an effective probe to study antisite defects in Bi 2Te 3.« less

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

NASA Astrophysics Data System (ADS)

Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

2015-09-01

We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

NASA Astrophysics Data System (ADS)

Levin, E. M.; Howard, A.; Straszheim, W. E.

2015-03-01

XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

Tuning the Seebeck coefficient of naphthalenediimide by electrochemical gating and doping.

PubMed

Al-Galiby, Qusiy H; Sadeghi, Hatef; Manrique, David Zsolt; Lambert, Colin J

2017-04-06

We investigate the sign and magnitude of the single-molecule Seebeck coefficient of naphthalenediimide (NDI) under the influence of electrochemical gating and doping. The molecule consists of a NDI core with two alkyl chains in the bay-area position, connected to gold electrodes via benzothiophene (DBT) anchor groups. By switching between the neutral, radical and di-anion charge states, we are able to tune the molecular energy levels relative to the Fermi energy of the electrodes. The resulting single-molecule room-temperature Seebeck coefficents of the three charge states are -294.5 μV K -1 , 122 μV K -1 and 144 μV K -1 respectively and the room-temperature power factors are 4.4 × 10 -5 W m -1 K -2 , 3 × 10 -5 W m -1 K -2 and 8.2 × 10 -4 W m -1 K -2 . As a further strategy for optimising thermoelectric properties, we also investigate the effect on both phonon and electron transport of doping the NDI with either an electron donor (TTF) or an electron acceptor (TCNE). We find that doping by TTF increases the room-temperature Seebeck coefficient and power factor from -73.7 μV K -1 and 2.6 × 10 -7 W m -1 K -2 for bare NDI to -105 μV K -1 and 3.6 × 10 -4 W m -1 K -2 in presence of TTF. The low thermal conductance of NDI-TTF, combined with the higher Seebeck coefficient and higher electrical conductance lead to a maximum thermoelectric figure of merit of ZT = 1.2, which is higher than that of bare NDI in several orders of magnitude. This demonstrates that both the sign and magnitude of NDI Seebeck coefficient can be tuned reversibly by electrochemical gating and doping, suggesting that such redox active molecules are attractive materials for ultra-thin-film thermoelectric devices.

Description of a Sensitive Seebeck Calorimeter Used for Cold Fusion Studies

NASA Astrophysics Data System (ADS)

Storms, Edmund

A sensitive and stable Seebeck calorimeter is described and used to determine the heat of formation of PdD. This determination can be used to show that such calorimeters are sufficiently accurate to measure the LENR effect and give support to the claims.

Seebeck effect on a weak link between Fermi and non-Fermi liquids

NASA Astrophysics Data System (ADS)

Nguyen, T. K. T.; Kiselev, M. N.

2018-02-01

We propose a model describing Seebeck effect on a weak link between two quantum systems with fine-tunable ground states of Fermi and non-Fermi liquid origin. The experimental realization of the model can be achieved by utilizing the quantum devices operating in the integer quantum Hall regime [Z. Iftikhar et al., Nature (London) 526, 233 (2015), 10.1038/nature15384] designed for detection of macroscopic quantum charged states in multichannel Kondo systems. We present a theory of thermoelectric transport through hybrid quantum devices constructed from quantum-dot-quantum-point-contact building blocks. We discuss pronounced effects in the temperature and gate voltage dependence of thermoelectric power associated with a competition between Fermi and non-Fermi liquid behaviors. High controllability of the device allows to fine tune the system to different regimes described by multichannel and multi-impurity Kondo models.

Spin Seebeck effect in insulating epitaxial γ-Fe2O3 thin films

NASA Astrophysics Data System (ADS)

Jiménez-Cavero, P.; Lucas, I.; Anadón, A.; Ramos, R.; Niizeki, T.; Aguirre, M. H.; Algarabel, P. A.; Uchida, K.; Ibarra, M. R.; Saitoh, E.; Morellón, L.

2017-02-01

We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ-Fe2O3), a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE) measurements in γ-Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1) μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4), establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

PubMed

Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

2013-12-01

We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

Observation of longitudinal spin-Seebeck effect in cobalt-ferrite epitaxial thin films

NASA Astrophysics Data System (ADS)

Niizeki, Tomohiko; Kikkawa, Takashi; Uchida, Ken-ichi; Oka, Mineto; Suzuki, Kazuya Z.; Yanagihara, Hideto; Kita, Eiji; Saitoh, Eiji

2015-05-01

The longitudinal spin-Seebeck effect (LSSE) has been investigated in cobalt ferrite (CFO), an exceptionally hard magnetic spinel ferrite. A bilayer of a polycrystalline Pt and an epitaxially-strained CFO(110) exhibiting an in-plane uniaxial anisotropy was prepared by reactive rf sputtering technique. Thermally generated spin voltage in the CFO layer was measured via the inverse spin-Hall effect in the Pt layer. External-magnetic-field (H) dependence of the LSSE voltage (VLSSE) in the Pt/CFO(110) sample with H ∥ [001] was found to exhibit a hysteresis loop with a high squareness ratio and high coercivity, while that with H ∥ [ 1 1 ¯ 0 ] shows a nearly closed loop, reflecting the different anisotropies induced by the epitaxial strain. The magnitude of VLSSE has a linear relationship with the temperature difference (ΔT), giving the relatively large VLSSE /ΔT of about 3 μV/K for CFO(110) which was kept even at zero external field.

Spin transport across antiferromagnets induced by the spin Seebeck effect

NASA Astrophysics Data System (ADS)

Cramer, Joel; Ritzmann, Ulrike; Dong, Bo-Wen; Jaiswal, Samridh; Qiu, Zhiyong; Saitoh, Eiji; Nowak, Ulrich; Kläui, Mathias

2018-04-01

For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only one magnon branch in the antiferromagnet. As an experimental system, we ascertain the transport across an antiferromagnet in Y3Fe5O12 |Ir20Mn80|Pt heterostructures. We determine the spin transport signals for spin currents generated in the Y3Fe5O12 by the spin Seebeck effect and compare to measurements of the spin Hall magnetoresistance in the heterostructure stack. By means of temperature-dependent and thickness-dependent measurements, we deduce conclusions on the spin transport mechanism across Ir20Mn80 and furthermore correlate it to its paramagnetic-antiferromagnetic phase transition.

Role of damping in spin Seebeck effect in yttrium iron garnet thin films

PubMed Central

Chang, Houchen; Praveen Janantha, P. A.; Ding, Jinjun; Liu, Tao; Cline, Kevin; Gelfand, Joseph N.; Li, Wei; Marconi, Mario C.; Wu, Mingzhong

2017-01-01

The role of damping in the spin Seebeck effect (SSE) was studied experimentally for the first time. The experiments used Y3Fe5O12 (YIG)/Pt bilayered structures where the YIG films exhibit very similar structural and static magnetic properties but very different damping. The data show that a decrease in the damping gives rise to an increase in the SSE coefficient, which is qualitatively consistent with some of the theoretical models. This response also shows quasi-linear behavior, which was not predicted explicitly by previous studies. The data also indicate that the SSE coefficient shows no notable correlations with the enhanced damping due to spin pumping, which can be understood in the frame of two existing models. PMID:28435873

An experimental approach of decoupling Seebeck coefficient and electrical resistivity

NASA Astrophysics Data System (ADS)

Muhammed Sabeer N., A.; Paulson, Anju; Pradyumnan, P. P.

2018-04-01

The Thermoelectrics (TE) has drawn increased attention among renewable energy technologies. The performance of a thermoelectric material is quantified by a dimensionless thermoelectric figure of merit, ZT=S2σT/κ, where S and σ vary inversely each other. Thus, improvement in ZT is not an easy task. So, researchers have been trying different parameter variations during thin film processing to improve TE properties. In this work, tin nitride (Sn3N4) thin films were deposited on glass substrates by reactive RF magnetron sputtering and investigated its thermoelectric response. To decouple the covariance nature of Seebeck coefficient and electrical resistivity for the enhancement of power factor (S2σ), the nitrogen gas pressure during sputtering was reduced. Reduction in nitrogen gas pressure reduced both sputtering pressure and amount of nitrogen available for reaction during sputtering. This experimental approach of combined effect introduced preferred orientation and stoichiometric variations simultaneously in the sputtered Sn3N4 thin films. The scattering mechanism associated with these variations enhanced TE properties by independently drive the Seebeck coefficient and electrical resistivity parameters.

A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

NASA Astrophysics Data System (ADS)

Lu, Nianduan; Li, Ling; Sun, Pengxiao; Banerjee, Writam; Liu, Ming

2014-09-01

A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor.

Role of chemically and thermally induced crystal lattice distortion in enhancing the Seebeck coefficient in complex tellurides

DOE PAGES

Levin, E. M.; Iowa State Univ., Ames, IA; Kramer, M. J.; ...

2016-07-14

Composition and crystal structure of complex materials can significantly change the Seebeck effect, i.e., heat to electrical energy conversion, which is utilized in thermoelectric materials. Despite decades of studies of various thermoelectric materials and their application, the fundamental understanding of this effect still is limited. One of the most efficient groups of thermoelectric materials is based on GeTe, where Ge is replaced by [Ag + Sb], i.e., Ag xSb xGe 50-2xTe 50 alloys, traditionally shown as (GeTe) m(AgSbTe 2) 100-m (TAGS-m series). Here, in this article, we report on the discovery of two unique phenomena in TAGS materials attributed tomore » the effects from [Ag + Sb] atoms: (i) a linear relation between the Seebeck coefficient and rhombohedral lattice distortion, and (ii) resonance-like temperature-induced behavior of the contribution to the Seebeck coefficient produced by [Ag + Sb] atoms. Finally, our findings show that heat to electrical energy conversion strongly depends on the temperature- and compositionally-induced rhombohedral to cubic transformation where [Ag + Sb] atoms play a crucial mediating role.« less

Nanoscale Thermoelectrics: A Study of the Absolute Seebeck Coefficient of Thin Films

NASA Astrophysics Data System (ADS)

Mason, Sarah J.

measure, S, as a function of temperature using a micro-machined thermal isolation platform consisting of a suspended, patterned SiN membrane. By measuring a series of thicknesses of metallic films up to the infinitely thin film limit, in which the electrical resistivity is no longer decreasing with increasing film thickness, but still not at bulk values, along with the effective electron mean free path, we are able to show the contribution of the leads needed to measure this property. Having a comprehensive understanding of the background contribution we are able to determine the absolute Seebeck coefficient of a wide variety of thin films. The nature of the design of the SiN membrane also allows the ability to accurately and directly measure thermal and electrical transport of the thin films yielding a comprehensive measurement of the three quantities that characterize a material's efficiency. This can serve to further the development of thermoelectric materials through precise measurements of the material properties that dictate efficiency.

Traceable Measurements of Seebeck Coefficients of Thermoelectric Materials by Using Noble Metal Thermocouples

NASA Astrophysics Data System (ADS)

Haupt, Sebastian; Edler, Frank

2018-06-01

The characterization of thermoelectric materials as reference materials for Seebeck coefficients at the Physikalisch-Technische Bundesanstalt (PTB) is based on the usage of gold/platinum differential thermocouples. In the case of thermoelectric materials containing silicon, the gold/platinum thermocouples are insufficient due to reactions with the silicon when the samples are at higher temperatures. To overcome this limitation and to expand the temperature range for the certification process, platinum/palladium thermocouples were incorporated in the measurement setup. This paper discusses the influence of the different differential thermocouples used for the measurement of the Seebeck coefficients. Results of a comparative investigation of Seebeck coefficient measurements of a metallic and two semiconducting reference materials in the temperature range from 300 K to 870 K are presented.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

NASA Astrophysics Data System (ADS)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Design for a spin-Seebeck diode based on two-dimensional materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Hua-Hua; Wu, Dan-Dan; Gu, Lei

2015-07-01

Studies of the spin-Seebeck effect (SSE) are very important for the development of fundamental science and novel low-power-consumption technologies. The spin-Seebeck diode (SSD), in which the spin current can be driven by a forward temperature gradient but not by a reverse temperature gradient, is a key unit in spin caloritronic devices. Here, we propose a SSD design using two-dimensional (2D) materials such as silicene and phosphorene nanoribbons as the source and drain. Due to their unique band structures and magnetic states, thermally driven spin-up and spin-down currents flow in opposite directions. This mechanism is different from that of the previousmore » one, which uses two permalloy circular disks [Phys. Rev. Lett. 112, 047203 (2014)], and the SSD in our design can be easily integrated with gate voltage control. Since the concept of this design is rather general and applicable to many 2D materials, it is promising for the realization and exploitation of SSDs in nanodevices.« less

Enhanced room-temperature spin Seebeck effect in a YIG/C60/Pt layered heterostructure

NASA Astrophysics Data System (ADS)

Das, R.; Kalappattil, V.; Geng, R.; Luong, H.; Pham, M.; Nguyen, T.; Liu, Tao; Wu, Mingzhong; Phan, M. H.; Srikanth, H.

2018-05-01

We report on large enhancement of the longitudinal spin Seebeck effect (LSSE) in the Y3Fe5O12 (YIG)/Pt system at room temperature due to the addition of a thin layer of organic semiconductor (C60) in between the YIG and the Pt. LSSE measurements show that the LSSE voltage increases significantly, from the initial value of 150 nV for the YIG/Pt structure to 240 nV for the YIG/C60(5nm)/Pt structure. Radio-frequency transverse susceptibility experiments reveal a significant decrease in the surface perpendicular magnetic anisotropy (PMA) of the YIG film when C60 is deposited on it. These results suggest that the LSSE enhancement may be attributed to increased spin mixing conductance, the decreased PMA, and the large spin diffusion length of C60.

Iron Disilicide as High-Temperature Reference Material for Traceable Measurements of Seebeck Coefficient Between 300 K and 800 K

NASA Astrophysics Data System (ADS)

Ziolkowski, Pawel; Stiewe, Christian; de Boor, Johannes; Druschke, Ines; Zabrocki, Knud; Edler, Frank; Haupt, Sebastian; König, Jan; Mueller, Eckhard

2017-01-01

Thermoelectric generators (TEGs) convert heat to electrical energy by means of the Seebeck effect. The Seebeck coefficient is a central thermoelectric material property, measuring the magnitude of the thermovoltage generated in response to a temperature difference across a thermoelectric material. Precise determination of the Seebeck coefficient provides the basis for reliable performance assessment in materials development in the field of thermoelectrics. For several reasons, measurement uncertainties of up to 14% can often be observed in interlaboratory comparisons of temperature-dependent Seebeck coefficient or in error analyses on currently employed instruments. This is still too high for an industrial benchmark and insufficient for many scientific investigations and technological developments. The TESt (thermoelectric standardization) project was launched in 2011, funded by the German Federal Ministry of Education and Research (BMBF), to reduce measurement uncertainties, engineer traceable and precise thermoelectric measurement techniques for materials and TEGs, and develop reference materials (RMs) for temperature-dependent determination of the Seebeck coefficient. We report herein the successful development and qualification of cobalt-doped β-iron disilicide ( β-Fe0.95Co0.05Si2) as a RM for high-temperature thermoelectric metrology. A brief survey on technological processes for manufacturing and machining of samples is presented. Focus is placed on metrological qualification of the iron disilicide, results of an international round-robin test, and final certification as a reference material in accordance with ISO-Guide 35 and the "Guide to the expression of uncertainty in measurement" by the Physikalisch-Technische Bundesanstalt, the national metrology institute of Germany.

Cross-Plane Seebeck Coefficient Measurement of Misfit Layered Compounds (SnSe)n(TiSe2)n (n = 1,3,4,5).

PubMed

Li, Zhen; Bauers, Sage R; Poudel, Nirakar; Hamann, Danielle; Wang, Xiaoming; Choi, David S; Esfarjani, Keivan; Shi, Li; Johnson, David C; Cronin, Stephen B

2017-03-08

We report cross-plane thermoelectric measurements of misfit layered compounds (SnSe) n (TiSe 2 ) n (n = 1,3,4,5), approximately 50 nm thick. Metal resistance thermometers are fabricated on the top and bottom of the (SnSe) n (TiSe 2 ) n material to measure the temperature difference and heat transport through the material directly. By varying the number of layers in a supercell, n, we vary the interface density while maintaining a constant global stoichiometry. The Seebeck coefficient measured across the (SnSe) n (TiSe 2 ) n samples was found to depend strongly on the number of layers in the supercell (n). When n decreases from 5 to 1, the cross-plane Seebeck coefficient decreases from -31 to -2.5 μV/K, while the cross-plane effective thermal conductivity decreases by a factor of 2, due to increased interfacial phonon scattering. The cross-plane Seebeck coefficients of the (SnSe) n (TiSe 2 ) n are very different from the in-plane Seebeck coefficients, which are higher in magnitude and less sensitive to the number of layers in a supercell, n. We believe this difference is due to the different carrier types in the n-SnSe and p-TiSe 2 layers and the effect of tunneling on the cross-plane transport.

Prediction of seebeck coefficient for compounds without restriction to fixed stoichiometry: A machine learning approach.

PubMed

Furmanchuk, Al'ona; Saal, James E; Doak, Jeff W; Olson, Gregory B; Choudhary, Alok; Agrawal, Ankit

2018-02-05

The regression model-based tool is developed for predicting the Seebeck coefficient of crystalline materials in the temperature range from 300 K to 1000 K. The tool accounts for the single crystal versus polycrystalline nature of the compound, the production method, and properties of the constituent elements in the chemical formula. We introduce new descriptive features of crystalline materials relevant for the prediction the Seebeck coefficient. To address off-stoichiometry in materials, the predictive tool is trained on a mix of stoichiometric and nonstoichiometric materials. The tool is implemented into a web application (http://info.eecs.northwestern.edu/SeebeckCoefficientPredictor) to assist field scientists in the discovery of novel thermoelectric materials. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Magnon diffusion theory for the spin Seebeck effect in ferromagnetic and antiferromagnetic insulators

NASA Astrophysics Data System (ADS)

Rezende, Sergio M.; Azevedo, Antonio; Rodríguez-Suárez, Roberto L.

2018-05-01

In magnetic insulators, spin currents are carried by the elementary excitations of the magnetization: spin waves or magnons. In simple ferromagnetic insulators there is only one magnon mode, while in two-sublattice antiferromagnetic insulators (AFIs) there are two modes, which carry spin currents in opposite directions. Here we present a theory for the diffusive magnonic spin current generated in a magnetic insulator layer by a thermal gradient in the spin Seebeck effect. We show that the formulations describing magnonic perturbation using a position-dependent chemical potential and those using a magnon accumulation are completely equivalent. Then we develop a drift–diffusion formulation for magnonic spin transport treating the magnon accumulation governed by the Boltzmann transport and diffusion equations and considering the full boundary conditions at the surfaces and interfaces of an AFI/normal metal bilayer. The theory is applied to the ferrimagnetic yttrium iron garnet and to the AFIs MnF2 and NiO, providing good quantitative agreement with experimental data.

Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

2017-12-01

Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

Low-temperature spin-Seebeck effect in the helimagnetic insulator Cu2OSeO3

NASA Astrophysics Data System (ADS)

Akopyan, Artem; Prasai, Narayan; Huang, Sunxiang; Cohn, Joshua L.; Trump, Benjamin; Marcus, Guy G.; McQueen, Tyrel M.

We report on measurements of the longitudinal spin-Seebeck effect in single crystals of the helimagnetic insulator Cu2OSeO3 in the range 0 . 5 K <= T <= 15 K , using sputtered Pt thin films for spin-current detection. Simultaneous determination of magnon thermal conductivities for each specimen allows for a ``calibration'' of the spin current. The influence on the inverse spin-Hall signal of the helical-conical and conical-collinear magnetic phase transitions as well as different crystallographic orientations for the heat flow and applied magnetic field, will be discussed. This material is based on work supported by the U.S. DOE, Off. of BES, Div. of Mater. Sci. and Eng., under Grants No. DEFG02-12ER46888 (Miami), DEFG02-08ER46544 (JHU), and the NSF, Div. of Mater. Res., Sol. St. Chem., CAREER Grant No. DMR-1253562 (JHU).

Long-range transverse spin Seebeck effect in permalloy stripes using Sagnac interferometer microscopy

NASA Astrophysics Data System (ADS)

Liu, Haoliang; McLaughlin, Ryan; Sun, Dali; Valy Vardeny, Z.

2018-04-01

Coupling of spins and phonons in ferromagnets (FM) may persist up to mm length scale, thus generating macroscopic spatially distributed spin accumulation along the direction of an applied thermal gradient to an FM slab. This typical feature of transverse spin Seebeck effect (TSSE) has been demonstrated so far using electrical detection methods in FM films, in particular in a patterned structure, in which FM stripes grown onto a substrate perpendicular to the applied thermal gradient direction are electrically and magnetically isolated. Here we report optically detected TSSE response in isolated FM stripes based on permalloy deposited on SiN substrate, upon the application of a thermal gradient. For these measurements we used the magneto-optic Kerr effect measured by an ultrasensitive Sagnac interferometer microscope that is immune to thermo-electrics artefacts. We found that the optical TSSE coefficient in the NiFe stripes geometry is about one order of magnitude smaller than that in the continuous NiFe film, which is due to the limited phonons path in the FM stripes along the thermal gradient direction. Our results further confirm the existence of TSSE response in conducting FM compounds.

Fabrication and thermoelectric properties of Ca-Co-O ceramics with negative Seebeck coefficient

NASA Astrophysics Data System (ADS)

Gong, Chunlin; Shi, Zongmo; Zhang, Yi; Chen, Yongsheng; Hu, Jiaxin; Gou, Jianjun; Qin, Mengjie; Gao, Feng

2018-06-01

Ca-Co-O ceramics is typically p-type thermoelectric materials and possesses positive Seebeck coefficient. In this work, n-type Ca-Co-O ceramics with negative Seebeck coefficients were fabricated by sintering and annealing in a reducing atmosphere. The microstructures and thermoelectric properties of the ceramics were investigated. The results show that the carrier concentration and the carrier mobility dramatically increase after the samples were annealed in the reducing atmosphere. The electrical resistivity increases from 0.0663 mΩ·cm to 0.2974 mΩ·cm, while the negative Seebeck coefficients varies from -24.9 μV/K to -56.3 μV/K as the temperature increases from 323 K to 823 K, and the maximum power factor (PF, 1.536 mW/m·K2) is obtained at 623 K. The samples have n-type thermoelectric properties with large PF values and ZT value (ZT = 0.39, 823 K). The unusual results will pave a new way for studying Ca-Co-O thermoelectric ceramics.

Imaging Magnetization Structure and Dynamics in Ultrathin Y3Fe5O12/Pt Bilayers with High Sensitivity Using the Time-Resolved Longitudinal Spin Seebeck Effect

NASA Astrophysics Data System (ADS)

Bartell, Jason M.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Yang, Fengyuan; Ralph, Daniel C.; Fuchs, Gregory D.

2017-04-01

We demonstrate an instrument for time-resolved magnetic imaging that is highly sensitive to the in-plane magnetization state and dynamics of thin-film bilayers of yttrium iron garnet [Y3Fe5O12(YIG )]/Pt : the time-resolved longitudinal spin Seebeck (TRLSSE) effect microscope. We detect the local in-plane magnetic orientation within the YIG by focusing a picosecond laser to generate thermally driven spin current from the YIG into the Pt by the spin Seebeck effect and then use the inverse spin Hall effect in the Pt to transduce this spin current to an output voltage. To establish the time resolution of TRLSSE, we show that pulsed optical heating of patterned YIG (20 nm )/Pt (6 nm )/Ru (2 nm ) wires generates a magnetization-dependent voltage pulse of less than 100 ps. We demonstrate TRLSSE microscopy to image both static magnetic structure and gigahertz-frequency magnetic resonance dynamics with submicron spatial resolution and a sensitivity to magnetic orientation below 0.3 °/√{H z } in ultrathin YIG.

Enhancement of spin-Seebeck effect by inserting ultra-thin Fe{sub 70}Cu{sub 30} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kikuchi, D., E-mail: d.kikuchi@imr.tohoku.ac.jp; WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577; Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577

2015-02-23

We report the longitudinal spin-Seebeck effects (LSSEs) for Pt/Fe{sub 70}Cu{sub 30}/BiY{sub 2}Fe{sub 5}O{sub 12} (BiYIG) and Pt/BiYIG devices. The LSSE voltage was found to be enhanced by inserting an ultra-thin Fe{sub 70}Cu{sub 30} interlayer. This enhancement decays sharply with increasing the Fe{sub 70}Cu{sub 30} thickness, suggesting that it is not due to bulk phenomena, such as a superposition of conventional thermoelectric effects, but due to interface effects related to the Fe{sub 70}Cu{sub 30} interlayer. Combined with control experiments using Pt/Fe{sub 70}Cu{sub 30} devices, we conclude that the enhancement of the LSSE voltage in the Pt/Fe{sub 70}Cu{sub 30}/BiYIG devices is attributedmore » to the improvement of the spin-mixing conductance at the Pt/BiYIG interfaces.« less

Reconstruction of an effective magnon mean free path distribution from spin Seebeck measurements in thin films

NASA Astrophysics Data System (ADS)

Chavez-Angel, E.; Zarate, R. A.; Fuentes, S.; Guo, E. J.; Kläui, M.; Jakob, G.

2017-01-01

A thorough understanding of the mean-free-path (MFP) distribution of the energy carriers is crucial to engineer and tune the transport properties of materials. In this context, a significant body of work has investigated the phonon and electron MFP distribution, however, similar studies of the magnon MFP distribution have not been carried out so far. In this work, we used thickness-dependence measurements of the longitudinal spin Seebeck (LSSE) effect of yttrium iron garnet films to reconstruct the cumulative distribution of a SSE related effective magnon MFP. By using the experimental data reported by (Guo et al 2016 Phys. Rev. X 6 031012), we adapted the phonon MFP reconstruction algorithm proposed by (Minnich 2012 Phys. Rev. Lett. 109 205901) and apply it to magnons. The reconstruction showed that magnons with different MFP contribute in different manner to the total LSSE and the effective magnon MFP distribution spreads far beyond their typical averaged values.

High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Jason; Kumar, Ravhi S.; Park, Changyong

2016-01-01

A new sample cell assembly design for the Paris-Edinburgh type large-volume press for simultaneous measurements of X-ray diffraction, electrical resistance, Seebeck coefficient and relative changes in the thermal conductance at high pressures has been developed. The feasibility of performing in situ measurements of the Seebeck coefficient and thermal measurements is demonstrated by observing well known solid–solid phase transitions of bismuth (Bi) up to 3 GPa and 450 K. A reversible polarity flip has been observed in the Seebeck coefficient across the Bi-I to Bi-II phase boundary. Also, successful Seebeck coefficient measurements have been performed for the classical high-temperature thermoelectric materialmore » PbTe under high pressure and temperature conditions. In addition, the relative change in the thermal conductivity was measured and a relative change in ZT, the dimensionless figure of merit, is described. Furthermore, this new capability enables pressure-induced structural changes to be directly correlated to electrical and thermal properties.« less

High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell.

PubMed

Baker, Jason; Kumar, Ravhi; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew; Velisavljevic, Nenad

2016-11-01

A new sample cell assembly design for the Paris-Edinburgh type large-volume press for simultaneous measurements of X-ray diffraction, electrical resistance, Seebeck coefficient and relative changes in the thermal conductance at high pressures has been developed. The feasibility of performing in situ measurements of the Seebeck coefficient and thermal measurements is demonstrated by observing well known solid-solid phase transitions of bismuth (Bi) up to 3 GPa and 450 K. A reversible polarity flip has been observed in the Seebeck coefficient across the Bi-I to Bi-II phase boundary. Also, successful Seebeck coefficient measurements have been performed for the classical high-temperature thermoelectric material PbTe under high pressure and temperature conditions. In addition, the relative change in the thermal conductivity was measured and a relative change in ZT, the dimensionless figure of merit, is described. This new capability enables pressure-induced structural changes to be directly correlated to electrical and thermal properties.

Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states

DOE PAGES

Jiang, Zilong; Chang, Cui -Zu; Masir, Massoud Ramezani; ...

2016-05-04

Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect (SSE), that is, measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a heterojunction with (Bi xSb 1–x) 2Te 3, a topological insulator. The non-equilibrium magnon population established at the interface can decay in part by interactions of magnons with electrons near the Fermi energy of the topological insulator. When this decay channel is made active by tuning (Bi xSbmore » 1–x) 2Te 3 into a bulk insulator, a large electromotive force emerges in the direction perpendicular to the in-plane magnetization of yttrium iron garnet. Lastly, the enhanced, tunable SSE which occurs when the Fermi level lies in the bulk gap offers unique advantages over the usual SSE in metals and therefore opens up exciting possibilities in spintronics.« less

Apparatus for measuring Seebeck coefficient and electrical resistivity of small dimension samples using infrared microscope as temperature sensor.

PubMed

Jaafar, W M N Wan; Snyder, J E; Min, Gao

2013-05-01

An apparatus for measuring the Seebeck coefficient (α) and electrical resistivity (ρ) was designed to operate under an infrared microscope. A unique feature of this apparatus is its capability of measuring α and ρ of small-dimension (sub-millimeter) samples without the need for microfabrication. An essential part of this apparatus is a four-probe assembly that has one heated probe, which combines the hot probe technique with the Van der Pauw method for "simultaneous" measurements of the Seebeck coefficient and electrical resistivity. The repeatability of the apparatus was investigated over a temperature range of 40 °C-100 °C using a nickel plate as a standard reference. The results show that the apparatus has an uncertainty of ±4.9% for Seebeck coefficient and ±5.0% for electrical resistivity. The standard deviation of the apparatus against a nickel reference sample is -2.43 μVK(-1) (-12.5%) for the Seebeck coefficient and -0.4 μΩ cm (-4.6%) for the electrical resistivity, respectively.

Seebeck Coefficient of Thermocouples from Nickel-Coated Carbon Fibers: Theory and Experiment.

PubMed

Hardianto, Hardianto; De Mey, Gilbert; Ciesielska-Wrόbel, Izabela; Hertleer, Carla; Van Langenhove, Lieva

2018-05-30

Thermocouples made of etched and non-etched nickel-coated carbon yarn (NiCCY) were investigated. Theoretic Seebeck coefficients were compared to experimental results from measurements of generated electric voltage by these thermocouples. The etching process for making thermocouples was performed by immersion of NiCCY in the solution containing a mixture of hydrochloric acid (HCl) (37% of concentration), and hydrogen peroxide (H₂O₂) in three different concentrations-3%, 6%, and 10%. Thirty minutes of etching to remove Ni from NiCCY was followed by washing and drying. Next, the ability to generate electrical voltage by the thermocouples (being a junction of the etched and the non-etched NiCCY) was measured in different ranges of temperatures, both a cold junction (291.15⁻293.15 K) and a hot junction (293.15⁻325.15 K). A formula predicting the Seebeck coefficient of this thermocouple was elaborated, taking into consideration resistance values of the tested samples. It was proven that there is a good agreement between the theoretical and experimental data, especially for the yarns etched with 6% and 10% peroxide (both were mixed with HCl). The electrical resistance of non-fully etched nickel remaining on the carbon fiber surface ( R 1 ) can have a significant effect on the thermocouples' characteristics.

The Seebeck Coefficient and Phonon Drag in Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahan, Gerald; Lindsay, Lucas R.; Broido, David

2014-12-29

We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.

Instrument for stable high temperature Seebeck coefficient and resistivity measurements under controlled oxygen partial pressure

DOE PAGES

Ihlefeld, Jon F.; Brown-Shaklee, Harlan James; Sharma, Peter Anand

2015-04-28

The transport properties of ceramic materials strongly depend on oxygen activity, which is tuned by changing the partial oxygen pressure (pO 2) prior to and during measurement. Within, we describe an instrument for highly stable measurements of Seebeck coefficient and electrical resistivity at temperatures up to 1300 K with controlled oxygen partial pressure. An all platinum construction is used to avoid potential materials instabilities that can cause measurement drift. Two independent heaters are employed to establish a small temperature gradient for Seebeck measurements, while keeping the average temperature constant and avoiding errors associated with pO 2-induced drifts in thermocouple readings.more » Oxygen equilibrium is monitored using both an O 2 sensor and the transient behavior of the resistance as a proxy. A pO 2 range of 10 -25–10 0 atm can be established with appropriate gas mixtures. Seebeck measurements were calibrated against a high purity platinum wire, Pt/Pt–Rh thermocouple wire, and a Bi 2Te3 Seebeck coefficient Standard Reference Material. To demonstrate the utility of this instrument for oxide materials we present measurements as a function of pO 2 on a 1 % Nb-doped SrTiO 3 single crystal, and show systematic changes in properties consistent with oxygen vacancy defect chemistry. Thus, an approximately 11% increase in power factor over a pO 2 range of 10 -19–10 -8 atm at 973 K for the donor-doped single crystals is observed.« less

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers

PubMed Central

Lee, Kyeong-Dong; Kim, Dong-Jun; Yeon Lee, Hae; Kim, Seung-Hyun; Lee, Jong-Hyun; Lee, Kyung-Min; Jeong, Jong-Ryul; Lee, Ki-Suk; Song, Hyon-Seok; Sohn, Jeong-Woo; Shin, Sung-Chul; Park, Byong-Guk

2015-01-01

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices. PMID:26020492

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers.

PubMed

Lee, Kyeong-Dong; Kim, Dong-Jun; Yeon Lee, Hae; Kim, Seung-Hyun; Lee, Jong-Hyun; Lee, Kyung-Min; Jeong, Jong-Ryul; Lee, Ki-Suk; Song, Hyon-Seok; Sohn, Jeong-Woo; Shin, Sung-Chul; Park, Byong-Guk

2015-05-28

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices.

Anomalous Seebeck coefficient observed in silicon nanowire micro thermoelectric generator

NASA Astrophysics Data System (ADS)

Hashimoto, S.; Asada, S.; Xu, T.; Oba, S.; Himeda, Y.; Yamato, R.; Matsukawa, T.; Matsuki, T.; Watanabe, T.

2017-07-01

We have found experimentally an anomalous thermoelectric characteristic of an n-type Si nanowire micro thermoelectric generator (μTEG). The μTEG is fabricated on a silicon-on-insulator wafer by electron beam lithography and dry etching, and its surface is covered with a thermally grown silicon dioxide film. The observed thermoelectric current is opposite to what is expected from the Seebeck coefficient of n-type Si. The result is understandable by considering a potential barrier in the nanowire. Upon the application of the temperature gradient across the nanowire, the potential barrier impedes the diffusion of thermally activated majority carriers into the nanowire, and it rather stimulates the injection of thermally generated minority carriers. The most plausible origin of the potential barrier is negative charges trapped at the interface between the Si nanowire and the oxide film. We practically confirmed that the normal Seebeck coefficient of the n-type Si nanowire is recovered after the hydrogen forming gas annealing. This implies that the interface traps are diminished by the hydrogen termination of bonding defects. The present results show the importance of the surface inactivation treatment of μTEGs to suppress the potential barrier and unfavorable contribution of minority carriers.

Estimating Seebeck Coefficient of a p-Type High Temperature Thermoelectric Material Using Bee Algorithm Multi-layer Perception

NASA Astrophysics Data System (ADS)

Uysal, Fatih; Kilinc, Enes; Kurt, Huseyin; Celik, Erdal; Dugenci, Muharrem; Sagiroglu, Selami

2017-08-01

Thermoelectric generators (TEGs) convert heat into electrical energy. These energy-conversion systems do not involve any moving parts and are made of thermoelectric (TE) elements connected electrically in a series and thermally in parallel; however, they are currently not suitable for use in regular operations due to their low efficiency levels. In order to produce high-efficiency TEGs, there is a need for highly heat-resistant thermoelectric materials (TEMs) with an improved figure of merit ( ZT). Production and test methods used for TEMs today are highly expensive. This study attempts to estimate the Seebeck coefficient of TEMs by using the values of existing materials in the literature. The estimation is made within an artificial neural network (ANN) based on the amount of doping and production methods. Results of the estimations show that the Seebeck coefficient can approximate the real values with an average accuracy of 94.4%. In addition, ANN has detected that any change in production methods is followed by a change in the Seebeck coefficient.

Statistical Analysis of a Round-Robin Measurement Survey of Two Candidate Materials for a Seebeck Coefficient Standard Reference Material

DTIC Science & Technology

2009-02-01

data was linearly fit, and the slope yielded the Seebeck coefficient. A small resis - tor was epoxied to the top of the sample, and the oppo- site end...space probes in its radioisotope thermoelectric generators (RTGs) and is of current interest to automobile manufacturers to supply additional power... resis - tivity or conductivity, thermal conductivity, and Seebeck coefficient. These required measurements are demanding, especially the thermal

A computer-controlled apparatus for Seebeck inhomogeneity testing of sheathed thermocouples

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; Bauserman, Willard A., Jr.

1993-01-01

Mineral-insulated metal-sheathed (MIMS) thermocouple assemblies are used throughout industry and research facilities as a method of temperature measurement where requirements for either harsh environmental conditions exist, or where rigidity of the measurement probe is required. Seebeck inhomogeneity is the abnormal variation of the Seebeck coefficient from point to point in a material. It is not disclosed in conventional calibration. A standardized method of measuring thermoelectric inhomogeneity along the thermocouple probe length is not available. Therefore, calibration for sheathed probes normally does not include testing of probe inhomogeneity. The measurement accuracy would be severely impacted if significant inhomogeneity and a temperature gradient were present in the same region of the probe. A computer-controlled system for determining inhomogeneities was designed, fabricated, and tested. This system provides an accurate method for the identification of the location of inhomogeneity along the length of a sheathed thermocouple and for the quantification of the inhomogeneity. This paper will discuss the apparatus and procedure used to perform these tests and will present data showing tests performed on sheathed thermocouple probes.

Spin Seebeck effect and ballistic transport of quasi-acoustic magnons in room-temperature yttrium iron garnet films

NASA Astrophysics Data System (ADS)

Noack, Timo B.; Musiienko-Shmarova, Halyna Yu; Langner, Thomas; Heussner, Frank; Lauer, Viktor; Heinz, Björn; Bozhko, Dmytro A.; Vasyuchka, Vitaliy I.; Pomyalov, Anna; L’vov, Victor S.; Hillebrands, Burkard; Serga, Alexander A.

2018-06-01

We studied the transient behavior of the spin current generated by the longitudinal spin Seebeck effect (LSSE) in a set of platinum-coated yttrium iron garnet (YIG) films of different thicknesses. The LSSE was induced by means of pulsed microwave heating of the Pt layer and the spin currents were measured electrically using the inverse spin Hall effect in the same layer. We demonstrate that the time evolution of the LSSE is determined by the evolution of the thermal gradient triggering the flux of thermal magnons in the vicinity of the YIG/Pt interface. These magnons move ballistically within the YIG film with a constant group velocity, while their number decays exponentially within an effective propagation length. The ballistic flight of the magnons with energies above 20 K is a result of their almost linear dispersion law, similar to that of acoustic phonons. By fitting the time-dependent LSSE signal for different film thicknesses varying by almost an order of magnitude, we found that the effective propagation length is practically independent of the YIG film thickness. We consider this fact as strong support of a ballistic transport scenario—the ballistic propagation of quasi-acoustic magnons in room temperature YIG.

Seebeck Coefficient of Cation-Substituted Disulfides CuCr1-x Fe x S2 and Cu1-x Fe x CrS2

NASA Astrophysics Data System (ADS)

Korotaev, Evgeniy V.; Syrokvashin, Mikhail M.; Filatova, Irina Yu.; Pelmenev, Konstantin G.; Zvereva, Valentina V.; Peregudova, Natalya N.

2018-03-01

The effect of cation substitution on the Seebeck coefficient of CuCr1-x Fe x S2 (x = 0 to 0.30) and Cu1-x Fe x CrS2 (x = 0 to 0.03) in the temperature range of 100 K to 450 K has been investigated. Increasing iron concentration led to a metal-insulator transition which suppressed the thermoelectric power. However, for low iron concentration (x < 0.03), the Seebeck coefficient of CuCr1-x Fe x S2 and Cu1-x Fe x CrS2 exceeded the values for the undoped copper-chromium disulfide matrix CuCrS2 at temperature below 300 K.

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

NASA Astrophysics Data System (ADS)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn: Consistent parameterization and prediction of Seebeck coefficients

NASA Astrophysics Data System (ADS)

Shi, Guangsha; Kioupakis, Emmanouil

2018-02-01

We apply density functional and many-body perturbation theory calculations to consistently determine and parameterize the relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn, and predict the Seebeck coefficient as a function of doping and temperature. The quasiparticle band gaps, including spin-orbit coupling effects, are determined to be 0.728 eV, 0.555 eV, and 0.142 eV for Mg2Si, Mg2Ge, and Mg2Sn, respectively. The inclusion of the semicore electrons of Mg, Ge, and Sn in the valence is found to be important for the accurate determination of the band gaps of Mg2Ge and Mg2Sn. We also developed a Luttinger-Kohn Hamiltonian and determined a set of band parameters to model the near-edge relativistic quasiparticle band structure consistently for all three compounds that can be applied for thermoelectric device simulations. Our calculated values for the Seebeck coefficient of all three compounds are in good agreement with the available experimental data for a broad range of temperatures and carrier concentrations. Our results indicate that quasiparticle corrections are necessary for the accurate determination of Seebeck coefficients at high temperatures at which bipolar transport becomes important.

Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

PubMed

Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

2015-05-22

Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material.

PubMed

Ramu, Ashok T; Mages, Phillip; Zhang, Chong; Imamura, Jeffrey T; Bowers, John E

2012-09-01

The Seebeck coefficient of a typical thermoelectric material, silicon-doped InGaAs lattice-matched to InP, is measured over a temperature range from 300 K to 550 K. By depositing and patterning a thermometric reference bar of silicon-doped InP adjacent to a bar of the material under test, temperature differences are measured directly. This is in contrast to conventional two-thermocouple techniques that subtract two large temperatures to yield a small temperature difference, a procedure prone to errors. The proposed technique retains the simple instrumentation of two-thermocouple techniques while eliminating the critical dependence of the latter on good thermal contact. The repeatability of the proposed technique is demonstrated to be ±2.6% over three temperature sweeps, while the repeatability of two-thermocouple measurements is about ±5%. The improved repeatability is significant for reliable reporting of the ZT figure of merit, which is proportional to the square of the Seebeck coefficient. The accuracy of the proposed technique depends on the accuracy with which the high-temperature Seebeck coefficient of the reference material may be computed or measured. In this work, the Seebeck coefficient of the reference material, n+ InP, is computed by rigorous solution of the Boltzmann transport equation. The accuracy and repeatability of the proposed technique can be systematically improved by scaling, and the method is easily extensible to other material systems currently being investigated for high thermoelectric energy conversion efficiency.

Unidirectional Spin-Wave-Propagation-Induced Seebeck Voltage in a PEDOT:PSS/YIG Bilayer

NASA Astrophysics Data System (ADS)

Wang, P.; Zhou, L. F.; Jiang, S. W.; Luan, Z. Z.; Shu, D. J.; Ding, H. F.; Wu, D.

2018-01-01

We clarify the physical origin of the dc voltage generation in a bilayer of a conducting polymer film and a micrometer-thick magnetic insulator Y3Fe5O12 (YIG) film under ferromagnetic resonance and/or spin wave excitation conditions. The previous attributed mechanism, the inverse spin Hall effect in the polymer [Nat. Mater. 12, 622 (2013), 10.1038/nmat3634], is excluded by two control experiments. We find an in-plane temperature gradient in YIG which has the same angular dependence with the generated voltage. Both vanish when the YIG thickness is reduced to a few nanometers. Thus, we argue that the dc voltage is governed by the Seebeck effect in the polymer, where the temperature gradient is created by the nonreciprocal magnetostatic surface spin wave propagation in YIG.

Intermediate Valence Tuning and Seebeck Coefficient Optimization in Yb-based Low-Temperature Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Lehr, Gloria; Morelli, Donald; Jin, Hyungyu; Heremans, Joseph

2014-03-01

Several Yb-based intermediate valence compounds have unique thermoelectric properties at low temperatures. These materials are interesting to study for niche applications such as cryogenic Peltier cooling of infrared sensors on satellites. Elements of different sizes, which form isostructural compounds, are used to form solid solutions creating a chemical pressure (smaller atoms - Sc) or relaxation (larger atoms - La) to alter the volume of the unit cell and thereby manipulate the average Yb valence. Magnetic susceptibility measurements show a strong correlation between the Seebeck coefficient and the ratio of trivalent to divalent Yb in these compounds. Two different Yb-based solid solution systems, Yb1-xScxAl2 and Yb1-xLaxCu2Si2, demonstrate that the concentration of Yb can be used to tune both the magnitude of the Seebeck coefficient as well as the temperature at which its absolute maximum occurs. This work is supported by Michigan State University and AFOSR-MURI ``Cryogenic Peltier Cooling'' Contract #FA9550-10-1-0533.

Influence of Thickness and Interface on the Low-Temperature Enhancement of the Spin Seebeck Effect in YIG Films

DOE PAGES

Guo, Er-Jia; Cramer, Joel; Kehlberger, Andreas; ...

2016-07-27

The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y 3Fe 5O 12 (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. Here we find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons inmore » the bulk of the material. We further demonstrate that the LSSE peak is significantly shifted by changing the interface coupling to an adjacent detection layer, revealing a more complex behavior beyond the currently discussed bulk effect. By direct microscopic imaging of the interface, we correlate the observed temperature dependence with the interface structure between the YIG and the adjacent metal layer. Finally, our results highlight the role of interface effects on the temperature-dependent LSSE in HM/YIG system, suggesting that the temperature-dependent spin current transparency strikingly relies on the interface conditions.« less

Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

NASA Astrophysics Data System (ADS)

Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

2018-06-01

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

Measurement setup for the simultaneous determination of diffusivity and Seebeck coefficient in a multi-anvil apparatus

NASA Astrophysics Data System (ADS)

Jacobsen, M. K.; Liu, W.; Li, B.

2012-09-01

In this paper, a high pressure setup is presented for performing simultaneous measurements of Seebeck coefficient and thermal diffusivity in multianvil apparatus for the purpose of enhancing the study of transport phenomena. Procedures for the derivation of Seebeck coefficient and thermal diffusivity/conductivity, as well as their associated sources of errors, are presented in detail, using results obtained on the filled skutterudite, Ce0.8Fe3CoSb12, up to 12 GPa at ambient temperature. Together with recent resistivity and sound velocity measurements in the same apparatus, these developments not only provide the necessary data for a self-consistent and complete characterization of the figure of merit of thermoelectric materials under pressure, but also serve as an important tool for furthering our knowledge of the dynamics and interplay between these transport phenomena.

Measurement setup for the simultaneous determination of diffusivity and Seebeck coefficient in a multi-anvil apparatus.

PubMed

Jacobsen, M K; Liu, W; Li, B

2012-09-01

In this paper, a high pressure setup is presented for performing simultaneous measurements of Seebeck coefficient and thermal diffusivity in multianvil apparatus for the purpose of enhancing the study of transport phenomena. Procedures for the derivation of Seebeck coefficient and thermal diffusivity/conductivity, as well as their associated sources of errors, are presented in detail, using results obtained on the filled skutterudite, Ce(0.8)Fe(3)CoSb(12,) up to 12 GPa at ambient temperature. Together with recent resistivity and sound velocity measurements in the same apparatus, these developments not only provide the necessary data for a self-consistent and complete characterization of the figure of merit of thermoelectric materials under pressure, but also serve as an important tool for furthering our knowledge of the dynamics and interplay between these transport phenomena.

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Jason; Kumar, Ravhi; Park, Changyong

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. We also measured electrical resistance and relative changes to the thermal conductivity, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. Our results demonstrate a fundamental relationship between structure and thermoelectricmore » behaviours and suggest that pressure is an effective tool to control them.« less

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Jason; Kumar, Ravhi; Park, Changyong

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectricmore » behaviours and suggest that pressure is an effective tool to control them.« less

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

DOE PAGES

Baker, Jason; Kumar, Ravhi; Park, Changyong; ...

2017-10-30

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. We also measured electrical resistance and relative changes to the thermal conductivity, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. Our results demonstrate a fundamental relationship between structure and thermoelectricmore » behaviours and suggest that pressure is an effective tool to control them.« less

Investigation of the spin Seebeck effect and anomalous Nernst effect in a bulk carbon material

NASA Astrophysics Data System (ADS)

Wongjom, Poramed; Pinitsoontorn, Supree

2018-03-01

Since the discovery of the spin Seebeck effect (SSE) in 2008, it has become one of the most active topics in the spin caloritronics research field. It opened up a new way to create the spin current by a combination of magnetic fields and heat. The SSE was observed in many kinds of materials including metallic, semiconductor, or insulating magnets, as well as non-magnetic materials. On the other hand, carbon-based materials have become one of the most exciting research areas recently due to its low cost, abundance and some exceptional functionalities. In this work, we have investigated the possibility of the SSE in bulk carbon materials for the first time. Thin platinum film (Pt), coated on the smoothened surface of the bulk carbon, was used as the spin detector via the inverse spin Hall effect (ISHE). The experiment for observing longitudinal SSE in the bulk carbon was set up by applying a magnetic field up to 30 kOe to the sample with the direction perpendicular to the applied temperature gradient. The induced voltage from the SSE was extracted. However, for conductive materials, e.g. carbon, the voltage signal under this set up could be a combination of the SSE and the anomalous Nernst effect (ANE). Therefore, two measurement configurations were carried out, i.e. the in-plane magnetization (IM), and the perpendicular-to-plane magnetization (PM). For the IM configuration, the SSE + ANE signals were detected where as the only ANE signal existed in the PM configuration. The results showed that there were the differences between the voltage signals from the IM and PM configurations implying the possibility of the SSE in the bulk carbon material. Moreover, it was found that the difference in the IM and PM signals was a function of the magnetic field strength, temperature difference, and measurement temperature. Although the magnitude of the possible SSE voltage in this experiment was rather low (less than 0.5 μV at 50 K), this research showed that potential of using

Design of spin-Seebeck diode with spin semiconductors.

PubMed

Zhang, Zhao-Qian; Yang, Yu-Rong; Fu, Hua-Hua; Wu, Ruqian

2016-12-16

We report a new design of spin-Seebeck diode using two-dimensional spin semiconductors such as sawtooth-like (ST) silicence nanoribbons (SiNRs), to generate unidirectional spin currents with a temperature gradient. ST SiNRs have subbands with opposite spins across the Fermi level and hence the flow of thermally excited carriers may produce a net spin current but not charge current. Moreover, we found that even-width ST SiNRs display a remarkable negative differential thermoelectric resistance due to a charge-current compensation mechanism. In contrast, odd-width ST SiNRs manifest features of a thermoelectric diode and can be used to produce both charge and spin currents with temperature gradient. These findings can be extended to other spin semiconductors and open the door for designs of new materials and spin caloritronic devices.

The fabrication of thermoelectric La0.95Sr0.05CoO3 nanofibers and Seebeck coefficient measurement.

PubMed

Xu, Weihe; Shi, Yong; Hadim, Hamid

2010-10-01

The P-type perovskite oxides La(1-x)Sr(x)CoO(3) are a promising group of complex oxide thermoelectric (TE) materials. The thermoelectric properties of these oxides are expected to be significantly improved when their critical dimensions are reduced to the nanoscale. In this paper, the La(0.95)Sr(0.05)CoO(3) nanofibers, with diameters in the range of approximately 35 nm, were successfully prepared by the electrospinning process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize these thermoelectric nanofibers. A micro-electromechanical (MEMS) tester was designed and fabricated to measure the Seebeck coefficient of the nanofibers. The measured voltage output was as large as 1.7 mV and the obtained Seebeck coefficient of the nanofibers reached 650 microV K(-1).

Long annealing effect on spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition

NASA Astrophysics Data System (ADS)

Ono, Tatsuyoshi; Hirata, Satoshi; Amemiya, Yoshiteru; Tabei, Tetsuo; Yokoyama, Shin

2018-04-01

The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0,1,2,3) for a fixed annealing condition of 3 h at 900 °C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 µV/50 °C was obtained for a sample annealed for 14 h at 800 °C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 °C.

Optoelectronic properties and Seebeck coefficient in SnSe thin films

NASA Astrophysics Data System (ADS)

Urmila, K. S.; Namitha, T. A.; Rajani, J.; Philip, R. R.; Pradeep, B.

2016-09-01

SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10-5 mbar. The as-prepared SnSe thin films are characterized for their structural, optical and electrical properties by various experimental techniques. The p-type conductivity, near-optimum direct band gap, high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic applications. The optical constants, loss factor, quality factor and optical conductivity of the films are evaluated. The results of Hall and thermoelectric power measurements are correlated to determine the density of states, Fermi energy and effective mass of carriers and are obtained as 2.8 × 1017 cm-3, 0.03 eV and 0.05m 0 respectively. The high Seebeck coefficient ≈ 7863 μV/K, reasonably good power factor ≈ 7.2 × 10-4 W/(m·K2) and thermoelectric figure of merit ≈ 1.2 observed at 42 K suggests that, on further work, the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.

Bandgap tuning and enhancement of seebeck coefficient in one dimensional GeSe

NASA Astrophysics Data System (ADS)

Kagdada, Hardik L.; Dabhi, Shweta D.; Jha, Prafulla K.

2018-04-01

The first principles based density functional theory is used for tuning the electronic bandgap and thermoelectric properties of bulk, two dimensional (2D) and one dimensional (1D) GeSe. There is an increase in the bandgap going from bulk to 1D with indirect to direct bandgap transition. There is a dramatic change in Seebeck coefficient (S) for GeSe going from bulk to 1D at 300 K. The electrical conductivity and electronic thermal conductivity are lower for 1D GeSe compared to the bulk GeSe due to larger bandgap in the case of 1D GeSe.

Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Papadogianni, Alexandra; Bierwagen, Oliver; White, Mark E.

2015-12-21

We propose a simple method based on the combination of Hall and Seebeck measurements to estimate the thickness of a carrier system within a semiconductor film. As an example, this method can distinguish “bulk” carriers, with homogeneous depth distribution, from “sheet” carriers, that are accumulated within a thin layer. The thickness of the carrier system is calculated as the ratio of the integral sheet carrier concentration, extracted from Hall measurements, to the volume carrier concentration, derived from the measured Seebeck coefficient of the same sample. For rutile SnO{sub 2}, the necessary relation of Seebeck coefficient to volume electron concentration inmore » the range of 3 × 10{sup 17} to 3 × 10{sup 20 }cm{sup −3} has been experimentally obtained from a set of single crystalline thin films doped with varying Sb-doping concentrations and unintentionally doped bulk samples, and is given as a “calibration curve.” Using this calibration curve, our method demonstrates the presence of interface electrons in homogeneously deep-acceptor (In) doped SnO{sub 2} films on sapphire substrates.« less

The bimodal distribution spin Seebeck effect enhancement in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 thin film

NASA Astrophysics Data System (ADS)

Wang, Hua; Hou, Dazhi; Kikkawa, Takashi; Ramos, Rafael; Shen, Ka; Qiu, Zhiyong; Chen, Yao; Umeda, Maki; Shiomi, Yuki; Jin, Xiaofeng; Saitoh, Eiji

2018-04-01

The temperature dependence of the spin Seebeck effect (SSE) in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 (NZA ferrite) thin film has been investigated systematically. The SSE at high fields shows a bimodal distribution enhancement from 3 K to 300 K and is well fitted with a double-peak Lorentzian function. We speculate the symmetric SSE enhancement in Pt/NZA ferrite bilayer, which is different from the magnon polarons induced asymmetric spikes in the SSE of Pt/YIG [T. Kikkawa et al. Phys. Rev. Lett. 117, 207203 (2016)], may result from the magnon-phonon interactions occurring at the intersections of the quantized magnon and phonon dispersions. The SSE results are helpful for the investigation of the magnon-phonon interaction in the magnetic ultrathin films.

Decoupling the electrical conductivity and Seebeck coefficient in the RE2SbO2 compounds through local structural perturbations.

PubMed

Wang, Peng L; Kolodiazhnyi, Taras; Yao, Jinlei; Mozharivskyj, Yurij

2012-01-25

Compromise between the electrical conductivity and Seebeck coefficient limits the efficiency of chemical doping in the thermoelectric research. An alternative strategy, involving the control of a local crystal structure, is demonstrated to improve the thermoelectric performance in the RE(2)SbO(2) system. The RE(2)SbO(2) phases, adopting a disordered anti-ThCr(2)Si(2)-type structure (I4/mmm), were prepared for RE = La, Nd, Sm, Gd, Ho, and Er. By traversing the rare earth series, the lattice parameters of the RE(2)SbO(2) phases are gradually reduced, thus increasing chemical pressure on the Sb environment. As the Sb displacements are perturbed, different charge carrier activation mechanisms dominate the transport properties of these compounds. As a result, the electrical conductivity and Seebeck coefficient are improved simultaneously, while the number of charge carriers in the series remains constant. © 2012 American Chemical Society

Application of High-Throughput Seebeck Microprobe Measurements on Thermoelectric Half-Heusler Thin Film Combinatorial Material Libraries.

PubMed

Ziolkowski, Pawel; Wambach, Matthias; Ludwig, Alfred; Mueller, Eckhard

2018-01-08

In view of the variety and complexity of thermoelectric (TE) material systems, combinatorial approaches to materials development come to the fore for identifying new promising compounds. The success of this approach is related to the availability and reliability of high-throughput characterization methods for identifying interrelations between materials structures and properties within the composition spread libraries. A meaningful characterization starts with determination of the Seebeck coefficient as a major feature of TE materials. Its measurement, and hence the accuracy and detectability of promising material compositions, may be strongly affected by thermal and electrical measurement conditions. This work illustrates the interrelated effects of the substrate material, the layer thickness, and spatial property distributions of thin film composition spread libraries, which are studied experimentally by local thermopower scans by means of the Potential and Seebeck Microprobe (PSM). The study is complemented by numerical evaluation. Material libraries of the half-Heusler compound system Ti-Ni-Sn were deposited on selected substrates (Si, AlN, Al 2 O 3 ) by magnetron sputtering. Assuming homogeneous properties of a film, significant decrease of the detected thermopower S m can be expected on substrates with higher thermal conductivity, yielding an underestimation of materials thermopower between 15% and 50%, according to FEM (finite element methods) simulations. Thermally poor conducting substrates provide a better accuracy with thermopower underestimates lower than 8%, but suffer from a lower spatial resolution. According to FEM simulations, local scanning of sharp thermopower peaks on lowly conductive substrates is linked to an additional deviation of the measured thermopower of up to 70% compared to homogeneous films, which is 66% higher than for corresponding cases on substrates with higher thermal conductivity of this study.

Apparatus for the measurement of electrical resistivity, Seebeck coefficient, and thermal conductivity of thermoelectric materials between 300 K and 12 K

NASA Astrophysics Data System (ADS)

Martin, Joshua; Nolas, George S.

2016-01-01

We have developed a custom apparatus for the consecutive measurement of the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of materials between 300 K and 12 K. These three transport properties provide for a basic understanding of the thermal and electrical properties of materials. They are of fundamental importance in identifying and optimizing new materials for thermoelectric applications. Thermoelectric applications include waste heat recovery for automobile engines and industrial power generators, solid-state refrigeration, and remote power generation for sensors and space probes. The electrical resistivity is measured using a four-probe bipolar technique, the Seebeck coefficient is measured using the quasi-steady-state condition of the differential method in a 2-probe arrangement, and the thermal conductivity is measured using a longitudinal, multiple gradient steady-state technique. We describe the instrumentation and the measurement uncertainty associated with each transport property, each of which is presented with representative measurement comparisons using round robin samples and/or certified reference materials. Transport properties data from this apparatus have supported the identification, development, and phenomenological understanding of novel thermoelectric materials.

Towards the Application of Structure-Property Relationship Modeling in Materials Science: Predicting the Seebeck Coefficient for Ionic Liquid/Redox Couple Systems.

PubMed

Sosnowska, Anita; Barycki, Maciej; Gajewicz, Agnieszka; Bobrowski, Maciej; Freza, Sylwia; Skurski, Piotr; Uhl, Stefanie; Laux, Edith; Journot, Tony; Jeandupeux, Laure; Keppner, Herbert; Puzyn, Tomasz

2016-06-03

This work focuses on determining the influence of both ionic-liquid (IL) type and redox couple concentration on Seebeck coefficient values of such a system. The quantitative structure-property relationship (QSPR) and read-across techniques are proposed as methods to identify structural features of ILs (mixed with LiI/I2 redox couple), which have the most influence on the Seebeck coefficient (Se ) values of the system. ILs consisting of small, symmetric cations and anions with high values of vertical electron binding energy are recognized as those with the highest values of Se . In addition, the QSPR model enables the values of Se to be predicted for each IL that belongs to the applicability domain of the model. The influence of the redox-couple concentration on values of Se is also quantitatively described. Thus, it is possible to calculate how the value of Se will change with changing redox-couple concentration. The presence of the LiI/I2 redox couple in lower concentrations increases the values of Se , as expected. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

NASA Astrophysics Data System (ADS)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

Dependence of Seebeck coefficient on a load resistance and energy conversion efficiency in a thermoelectric composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamashita, Osamu; Odahara, Hirotaka; Ochi, Takahiro

2007-10-02

The thermo-emf {delta}V and current {delta}I generated by imposing the alternating temperature gradients (ATG) at a period of T and the steady temperature gradient (STG) on a thermoelectric (TE) composite were measured as a function of t, where t is the lapsed time and T was varied from 60 to or {infinity} s. The STG and ATG were produced by imposing steadily and alternatively a source voltage V in the range from 1.0 to 4.0 V on two Peltier modules sandwiching a composite. {delta}T, {delta}V, {delta}I and V{sub P} oscillate at a period T and their waveforms vary significantly withmore » a change of T, where {delta}V and V{sub P} are the voltage drops in a load resistance R{sub L} and in resistance R{sub P} of two modules. The resultant Seebeck coefficient |{alpha}| = |{delta}V|/{delta}T of a composite under the STG was found to be expressed as |{alpha}| = |{alpha}{sub 0}|(1 - R{sub comp}/R{sub T}), where R{sub T} is the total resistance of a circuit for measuring the output signals and R{sub comp} is the resistance of a composite. The effective generating power {delta}W{sub eff} has a local maximum at T = 960 s for the p-type composite and at T = 480 s for the n-type one. The maximum energy conversion efficiency {eta} of the p- and n-type composites under the ATG produced by imposing a voltage of 4.0 V at an optimum period were 0.22 and 0.23% at {delta}T{sub eff} = 50 K, respectively, which are 42 and 43% higher than those at {delta}T = 42 K under the STG. These maximum {eta} for a TE composite sandwiched between two Peltier modules, were found to be expressed theoretically in terms of R{sub P}, R{sub T}, R{sub L}, {alpha}{sub P} and {alpha}, where {alpha}{sub P} and {alpha} are the resultant Seebeck coefficients of Peltier modules and a TE composite.« less

Anisotropy of Seebeck coefficient in Si/Ge composite quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsin, Cheng-Lun, E-mail: clhsin@ee.ncu.edu.tw; Tsai, Yue-Yun; Lee, Sheng-Wei

2016-08-22

In this report, Si{sub 5}Ge{sub 5} alloy and Si/Ge composite quantum dots (CQDs) layers were grown on Si substrates. Seebeck coefficient (S) of Si and Ge wafers, as well as these two samples, were patterned and measured from 60 to 180 °C in [110] and [010] directions. For Si, Ge, and Si{sub 5}Ge{sub 5}, the S of each is a constant in this temperature range. However, the S of the CQDs at 60–80 °C is anomalous and much higher than the others. The behavior of the voltage difference is linear to the temperature difference even as large as 50 °C, except for CQDsmore » at 60–80 °C. This result indicates that a narrow distribution of carriers energy with a sharp change in density of state near Fermi-level and selective carrier scattering in the miniband at Si/Ge interface make the discrepancy of charge transport enhanced. The CQDs can be a good candidate for temperature sensing and thermoelectric applications due to their high S and low thermal conductivity near room temperature.« less

Characterization of Lorenz number with Seebeck coefficient measurement

DOE PAGES

Kim, Hyun -Sik; Gibbs, Zachary M.; Tang, Yinglu; ...

2015-04-01

In analyzing zT improvements due to lattice thermal conductivity (κ L ) reduction, electrical conductivity (σ) and total thermal conductivity (κ Total ) are often used to estimate the electronic component of the thermal conductivity (κ E ) and in turn κ L from κ L = ~ κ Total - LσT. The Wiedemann-Franz law, κ E = LσT, where L is Lorenz number, is widely used to estimate κ E from σ measurements. It is a common practice to treat L as a universal factor with 2.44 × 10⁻⁸ WΩK⁻² (degenerate limit). However, significant deviations from the degenerate limitmore » (approximately 40% or more for Kane bands) are known to occur for non-degenerate semiconductors where L converges to 1.5 × 10⁻⁸ WΩK⁻² for acoustic phonon scattering. The decrease in L is correlated with an increase in thermopower (absolute value of Seebeck coefficient (S)). Thus, a first order correction to the degenerate limit of L can be based on the measured thermopower, |S|, independent of temperature or doping. We propose the equation: (where L is in 10⁻⁸ WΩK⁻² and S in μV/K) as a satisfactory approximation for L. This equation is accurate within 5% for single parabolic band/acoustic phonon scattering assumption and within 20% for PbSe, PbS, PbTe, Si₀.₈Ge₀.₂ where more complexity is introduced, such as non-parabolic Kane bands, multiple bands, and/or alternate scattering mechanisms. The use of this equation for L rather than a constant value (when detailed band structure and scattering mechanism is not known) will significantly improve the estimation of lattice thermal conductivity. L = 1.5 + exp [-|S|116]« less

Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

NASA Astrophysics Data System (ADS)

Dyck, J. S.; Colvin, J. R.; Quayle, P. C.; Peshek, T. J.; Kash, K.

2016-06-01

II-IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is the II-IV-nitride analogue to the III-nitride GaN. Very little is known about the transport properties of ZnGeN2. In this work, we present Seebeck coefficient ( S) data on 3-micron-diameter, 70-micron-long, single-crystal ZnGeN2 rods, employing a novel measurement approach. The measurements of S show that the majority free carriers are electrons, and imply that the carrier gas is degenerate. Within a single-band model for the conduction band, a carrier concentration of order 1019 cm-3 was estimated for a measured S = -90 μV/K. Together with electrical transport measurements, a lower limit for the electron mobility is estimated to be ˜20 cm2/V-s. A discussion of this material as a thermoelectric is presented. The background level of free electrons in this unintentionally doped ZnGeN2 is very near the predicted optimum value for maximum thermoelectric performance.

Seebeck and figure of merit enhancement in nanostructured antimony telluride by antisite defect suppression through sulfur doping.

PubMed

Mehta, Rutvik J; Zhang, Yanliang; Zhu, Hong; Parker, David S; Belley, Matthew; Singh, David J; Ramprasad, Ramamurthy; Borca-Tasciuc, Theodorian; Ramanath, Ganpati

2012-09-12

Antimony telluride has a low thermoelectric figure of merit (ZT < ∼0.3) because of a low Seebeck coefficient α arising from high degenerate hole concentrations generated by antimony antisite defects. Here, we mitigate this key problem by suppressing antisite defect formation using subatomic percent sulfur doping. The resultant 10-25% higher α in bulk nanocrystalline antimony telluride leads to ZT ∼ 0.95 at 423 K, which is superior to the best non-nanostructured antimony telluride alloys. Density functional theory calculations indicate that sulfur increases the antisite formation activation energy and presage further improvements leading to ZT ∼ 2 through optimized doping. Our findings are promising for designing novel thermoelectric materials for refrigeration, waste heat recovery, and solar thermal applications.

Reliable measurement of the Seebeck coefficient of organic and inorganic materials between 260 K and 460 K

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beretta, D.; Lanzani, G.; Dipartimento di Fisica, P.zza Leonardo da Vinci 32, Politecnico di Milano, 20133 Milano

2015-07-15

A new experimental setup for reliable measurement of the in-plane Seebeck coefficient of organic and inorganic thin films and bulk materials is reported. The system is based on the “Quasi-Static” approach and can measure the thermopower in the range of temperature between 260 K and 460 K. The system has been tested on a pure nickel bulk sample and on a thin film of commercially available PEDOT:PSS deposited by spin coating on glass. Repeatability within 1.5% for the nickel sample is demonstrated, while accuracy in the measurement of both organic and inorganic samples is guaranteed by time interpolation of datamore » and by operating with a temperature difference over the sample of less than 1 K.« less

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

NASA Astrophysics Data System (ADS)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Characterization of Lorenz number with Seebeck coefficient measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hyun-Sik; Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803; Gibbs, Zachary M.

2015-04-01

In analyzing zT improvements due to lattice thermal conductivity (κ{sub L}) reduction, electrical conductivity (σ) and total thermal conductivity (κ{sub Total}) are often used to estimate the electronic component of the thermal conductivity (κ{sub E}) and in turn κ{sub L} from κ{sub L} = ∼ κ{sub Total} − LσT. The Wiedemann-Franz law, κ{sub E} = LσT, where L is Lorenz number, is widely used to estimate κ{sub E} from σ measurements. It is a common practice to treat L as a universal factor with 2.44 × 10{sup −8} WΩK{sup −2} (degenerate limit). However, significant deviations from the degenerate limit (approximatelymore » 40% or more for Kane bands) are known to occur for non-degenerate semiconductors where L converges to 1.5 × 10{sup −8} WΩK{sup −2} for acoustic phonon scattering. The decrease in L is correlated with an increase in thermopower (absolute value of Seebeck coefficient (S)). Thus, a first order correction to the degenerate limit of L can be based on the measured thermopower, |S|, independent of temperature or doping. We propose the equation: L=1.5+exp[−(|S|)/(116) ] (where L is in 10{sup −8} WΩK{sup −2} and S in μV/K) as a satisfactory approximation for L. This equation is accurate within 5% for single parabolic band/acoustic phonon scattering assumption and within 20% for PbSe, PbS, PbTe, Si{sub 0.8}Ge{sub 0.2} where more complexity is introduced, such as non-parabolic Kane bands, multiple bands, and/or alternate scattering mechanisms. The use of this equation for L rather than a constant value (when detailed band structure and scattering mechanism is not known) will significantly improve the estimation of lattice thermal conductivity.« less

Field-effect-dependent thermoelectric power in highly resistive Sb2Se3 single nanowire

NASA Astrophysics Data System (ADS)

Sun, Kien Wen; Ko, Ting-Yu; Shellaiah, Muthaiah

2018-04-01

In this paper, we report the results of our experiments on and measurements of electrical resistivity and thermoelectric power (Seebeck coefficient) from single-crystalline antimony triselenide (Sb2Se3) single nanowires (NWs) with high resistivity ( σ 4.37 × 10-4 S/m). A positive Seebeck coefficient of approximately 661 µV/K at room temperature was obtained using a custom-made thermoelectric power probe with an alternating current lock-in method (the 2ω technique), which indicates that the thermal transport is dominated by holes. The measured Seebeck coefficient of the NWs is a factor of 2-3 lower than their bulk counterparts and is comparable to that of a highly conductive Sb2Se3 single NWs (approximately - 750 µV/K). We observed an increase in the Seebeck coefficients with increased bias voltages by field-effect gating, which cannot be explained by the modulation of the Fermi level in the NWs.

Profiling the Local Seebeck Coefficient of InAs-GaAs Quantum Dots Using Scanning Thermoelectric Microscopy

NASA Astrophysics Data System (ADS)

Lin, Yen-Hsiang; Walrath, Jenna; Huang, Simon; Goldman, Rachel

2014-03-01

Thermoelectric (TE) devices offer a method of recovering waste heat through solid state conversion of heat to electricity. However, the typical efficiencies of TE devices are 5-10% which constitutes a barrier to wide spread use. There have recently been a number of reports of an increase in the bulk thermopower due to nanostructuring. In addition to our recent report of enhanced thermopower for GaAs embedded with indium nanocrystals, a theoretical study by Mahan and Sofo suggested that the best thermoelectric materials have a delta function density of states. Quantum dots fit ideally into such a picture. To date, the influence of nanostructuring on the electronic LDOS and thermopower has been studied using spatially averaged measurements; a nanoscale investigation of the effects of nanostructures on thermopower has yet to be presented. To investigate the link between dimensionality and TE properties, we are examining structures ranging from QDs to bulk-like layers, comparing SThEM measurements of the local Seebeck coefficient, S, with STS measurements of the local density of states (LDOS). STM, STS, and SThEM performed on InAs quantum dots (QDs) grown on GaAs. SThEM reveals enhanced S-values near the QD edge; STS reveals band-bending at the QD/GaAs interface, suggesting that the S enhancement is due to interfacial charge accumulation.

Effets Seebeck et Nernst dans les cuprates: Etude de la reconstruction de la surface de Fermi sous champ magnetique intense

NASA Astrophysics Data System (ADS)

Laliberte, Francis

2010-06-01

Ce memoire presente des mesures de transport thermoelectrique, les effets Seebeck et Nernst, dans une serie d'echantillons de supraconducteurs a haute temperature critique. Des resultats obtenus recemment au Laboratoire National des Champs Magnetiques Intenses a Grenoble sur La1.7Eu0.2Sr0.1 CuO4, La1.675Eu0.2Sr0.125CuO 4, La1.64Eu0.2Sr0.16CuO4, La1.74Eu0.1Sr0.16CuO4 et La 1.4Nd0.4Sr0.2CuO4 sont analyses. Une attention particuliere est accordee aux equations de la theorie semi-classique du transport et leur validite est verifiee. La procedure experimentale et les materiaux utilises pour concevoir les montages de mesures sont expliques en detail. Enfin, un chapitre est dedie a l'explication et l'interpretation des resultats de transport thermoelectrique sur YBa2Cu3O6+delta publies au cours de l'hiver 2010 dans les revues Nature et Physical Review Letters. Les donnees d'effet Seebeck dans les echantillons de La 1.8-x,Eu0.2SrxCuO 4, ou un changement de signe est observe, permettent de conclure a la presence d'une poche d'electrons dans la surface de Fermi qui domine le transport a basse temperature dans la region sous-dopee du diagramme de phase. Cette conclusion est similaire a celle obtenue par des mesures d'effet Hall dans YBa 2Cu3O6+delta et elle cadre bien dans un scenario de reconstruction de la surface de Fermi. Les donnees d'effet Nernst recueillies indiquent que la contribution des fluctuations supraconductrices est limitee a un modeste intervalle de temperature au-dessus de la temperature critique.

Thermoelectric properties of the unfilled skutterudite FeSb 3 from first principles and Seebeck local probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemal, Sébastien; Nguyen, Ngoc; de Boor, Johannes

2015-11-16

In this paper, using a combination of first-principles calculations and experimental transport measurements, we study the electronic and magnetic structure of the unfilled skutterudite FeSb 3. We employ the hybrid functional approach for exchange correlation. The ground state is determined to be antiferromagnetic with an atomic magnetic moment of 1.6μ B/Fe. The Néel temperature T N is estimated at 6 K, in agreement with experiments which found a paramagnetic state down to 10 K. The ground state is semiconducting, with a small electronic gap of 33meV, also consistent with previous experiments on films. Charge carrier concentrations are estimated from Hallmore » resistance measurements. The Seebeck coefficient is measured and mapped using a scanning probe at room temperature that yields an average value of 38.6μVK -1, slightly lower than the theoretical result. Finally, the theoretical conductivity is analyzed as a function of temperature and concentration of charge carriers.« less

Phenomenological theories of the low-temperature pseudogap: Hall number, specific heat, and Seebeck coefficient

NASA Astrophysics Data System (ADS)

Verret, S.; Simard, O.; Charlebois, M.; Sénéchal, D.; Tremblay, A.-M. S.

2017-09-01

Since its experimental discovery, many phenomenological theories successfully reproduced the rapid rise of the Hall number nH, going from p at low doping to 1 +p at the critical doping p* of the pseudogap in superconducting cuprates. Further comparison with experiments is now needed in order to narrow down candidates. In this paper, we consider three previously successful phenomenological theories in a unified formalism—an antiferromagnetic mean field (AF), a spiral incommensurate antiferromagnetic mean field (sAF), and the Yang-Rice-Zhang (YRZ) theory. We find a rapid rise in the specific heat and a rapid drop in the Seebeck coefficient for increasing doping across the transition in each of those models. The predicted rises and drops are locked, not to p*, but to the doping where antinodal electron pockets, characteristic of each model, appear at the Fermi surface shortly before p*. While such electron pockets are still to be found in experiments, we discuss how they could provide distinctive signatures for each model. We also show that the range of doping where those electron pockets would be found is strongly affected by the position of the van Hove singularity.

Multi-band analysis of temperature-dependent transport coefficients (conductivity, Hall, Seebeck, and Nernst) of Ni-doped CoSb3

NASA Astrophysics Data System (ADS)

Kajikawa, Y.

2016-02-01

The experimental data on the temperature dependence of the four transport coefficients, i.e., the electrical conductivity (σ), Hall coefficient (RH), Seebeck coefficient (S), and Nernst coefficient (Q), of n-type Co0.999Ni0.001Sb3 reported by Sun et al. [Nat. Commun. 6, 7475 (2015)] have been analyzed in a multi-band model, especially focusing on the low temperature data. The multi-band model includes not only the lowest valley of the conduction band at the Γ point but also satellite valleys at the second minima together with an impurity band. The lowest valley at the Γ point is assumed to split into the c1 band and the spin-orbit split-off (so) band. For the analysis, the general expression of the Nernst coefficient in the multi-band model is derived. At such low temperatures that the other bands than the c1 and the impurity band can be neglected, this expression is shown to be approximated as the sum of three terms: the intrinsic terms due to the Nernst coefficients in the two bands themselves and a cross term proportional to the difference of Seebeck coefficients between the two bands. As a result of the analysis, it is proved that the anomalous positive peak of S(T) observed around T = 20 K as well as the sharp rise of the Hall mobility observed from 15 K to 40 K are due to the transition from hopping conduction in the impurity band to conduction in the c1 band. On the other hand, the pronounced peak of Q(T) observed slightly below 40 K is proved to be due to the cross term between the impurity band and the c1 band. In addition, a shoulder of Q(T) appeared around T = 80 K lends clear evidence of the existence of the so band, while the increase in both of σ(T) and | S ( T ) | above 150 K suggests the existence of the satellite valleys.

Statistical Analysis of a Round-Robin Measurement Survey of Two Candidate Materials for a Seebeck Coefficient Standard Reference Material

PubMed Central

Lu, Z. Q. J.; Lowhorn, N. D.; Wong-Ng, W.; Zhang, W.; Thomas, E. L.; Otani, M.; Green, M. L.; Tran, T. N.; Caylor, C.; Dilley, N. R.; Downey, A.; Edwards, B.; Elsner, N.; Ghamaty, S.; Hogan, T.; Jie, Q.; Li, Q.; Martin, J.; Nolas, G.; Obara, H.; Sharp, J.; Venkatasubramanian, R.; Willigan, R.; Yang, J.; Tritt, T.

2009-01-01

In an effort to develop a Standard Reference Material (SRM™) for Seebeck coefficient, we have conducted a round-robin measurement survey of two candidate materials—undoped Bi2Te3 and Constantan (55 % Cu and 45 % Ni alloy). Measurements were performed in two rounds by twelve laboratories involved in active thermoelectric research using a number of different commercial and custom-built measurement systems and techniques. In this paper we report the detailed statistical analyses on the interlaboratory measurement results and the statistical methodology for analysis of irregularly sampled measurement curves in the interlaboratory study setting. Based on these results, we have selected Bi2Te3 as the prototype standard material. Once available, this SRM will be useful for future interlaboratory data comparison and instrument calibrations. PMID:27504212

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films

NASA Astrophysics Data System (ADS)

Preissler, Natalie; Bierwagen, Oliver; Ramu, Ashok T.; Speck, James S.

2013-08-01

A comprehensive study of the room-temperature electrical and electrothermal transport of single-crystalline indium oxide (In2O3) and indium tin oxide (ITO) films over a wide range of electron concentrations is reported. We measured the room-temperature Hall mobility μH and Seebeck coefficient S of unintentionally doped and Sn-doped high-quality, plasma-assisted molecular-beam-epitaxy-grown In2O3 for volume Hall electron concentrations nH from 7×1016 cm-3 (unintentionally doped) to 1×1021 cm-3 (highly Sn-doped, ITO). The resulting empirical S(nH) relation can be directly used in other In2O3 samples to estimate the volume electron concentration from simple Seebeck coefficient measurements. The mobility and Seebeck coefficient were modeled by a numerical solution of the Boltzmann transport equation. Ionized impurity scattering and polar optical phonon scattering were found to be the dominant scattering mechanisms. Acoustic phonon scattering was found to be negligible. Fitting the temperature-dependent mobility above room temperature of an In2O3 film with high mobility allowed us to find the effective Debye temperature (ΘD=700 K) and number of phonon modes (NOPML=1.33) that best describe the polar optical phonon scattering. The modeling also yielded the Hall scattering factor rH as a function of electron concentration, which is not negligible (rH≈1.4) at nondegenerate electron concentrations. Fitting the Hall-scattering-factor corrected concentration-dependent Seebeck coefficient S(n) for nondegenerate samples to the numerical solution of the Boltzmann transport equation and to widely used, simplified equations allowed us to extract an effective electron mass of m*=(0.30±0.03)me (with free electron mass me). The modeled mobility and Seebeck coefficient based on polar optical phonon and ionized impurity scattering describes the experimental results very accurately up to electron concentrations of 1019 cm-3, and qualitatively explains a mobility plateau or local

Longitudinal spin Seebeck effect in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} prepared on gadolinium gallium garnet (001) by metal organic decomposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asada, H., E-mail: asada@yamaguchi-u.ac.jp; Kuwahara, A.; Sakata, N.

2015-05-07

Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with the Ga composition x = 0, 0.5, and 1.0 are prepared on (001) oriented gadolinium gallium garnet substrates by a metal organic decomposition method. Only (001) peaks are observed in x-ray diffraction patterns for all the films, suggesting that the highly oriented Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films were formed. Increasing Ga composition, the saturation magnetization decreases, and the perpendicular easy axis is enhanced due to the decrease of the shape anisotropy. Longitudinal spin Seebeck effects (LSSEs) in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with a Pt layer of 10 nm in thicknessmore » were investigated. Magnetic field dependence of the thermoelectric voltage caused by the LSSE in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} films indicates the hysteresis loop with the small coercivity reflecting the magnetization curve. The decrease of LSSE voltage in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} is clearly observed with the decrease of Fe composition.« less

Spin and charge thermopower effects in the ferromagnetic graphene junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahedi, Javad, E-mail: javahedi@gmail.com; Center for Theoretical Physics of Complex Systems, Institute for Basic Science; Barimani, Fattaneh

2016-08-28

Using wave function matching approach and employing the Landauer-Buttiker formula, a ferromagnetic graphene junction with temperature gradient across the system is studied. We calculate the thermally induced charge and spin current as well as the thermoelectric voltage (Seebeck effect) in the linear and nonlinear regimes. Our calculation revealed that due to the electron-hole symmetry, the charge Seebeck coefficient is, for an undoped magnetic graphene, an odd function of chemical potential while the spin Seebeck coefficient is an even function regardless of the temperature gradient and junction length. We have also found with an accurate tuning external parameter, namely, the exchangemore » filed and gate voltage, the temperature gradient across the junction drives a pure spin current without accompanying the charge current. Another important characteristic of thermoelectric transport, thermally induced current in the nonlinear regime, is examined. It would be our main finding that with increasing thermal gradient applied to the junction the spin and charge thermovoltages decrease and even become zero for non zero temperature bias.« less

Anisotropy of the Seebeck and Nernst coefficients in parent compounds of the iron-based superconductors

NASA Astrophysics Data System (ADS)

Matusiak, Marcin; Babij, Michał; Wolf, Thomas

2018-03-01

In-plane longitudinal and transverse thermoelectric phenomena in two parent compounds of iron-based superconductors are studied. Namely, the Seebeck (S ) and Nernst (ν) coefficients were measured in the temperature range 10-300 K for BaF e2A s2 and CaF e2A s2 single crystals that were detwinned in situ. The thermoelectric response shows sizable anisotropy in the spin density wave (SDW) state for both compounds, while some dissimilarities in the vicinity of the SDW transition can be attributed to the different nature of the phase change in BaF e2A s2 and CaF e2A s2 . Temperature dependences of S and ν can be described within a two-band model that contains a contribution from highly mobile, probably Dirac, electrons. The Dirac band seems to be rather isotropic, whereas most of the anisotropy in the transport phenomena could be attributed to "regular" holelike charge carriers. We also observe that the off-diagonal element of the Peltier tensor αx y is not the same for the a and b orthorhombic axes, which indicates that the widely used Mott formula is not applicable to the SDW state of iron-based superconductors.

Compensation of voltage drops in solid-state switches used with thermoelectric generators

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Seebeck effect solid state switch was developed eliminating thermoelectric generator switch voltage drops. Semiconductor switches were fabricated from materials with large Seebeck coefficients, arranged such that Seebeck potential is generated with such polarity that current flow is aided.

Analysis of Residual Acceleration Effects on Transport and Segregation During Directional Solidification of Tin-Bismuth in the MEPHISTO Furnace Facility

NASA Technical Reports Server (NTRS)

Alexander J. Iwan D. (Principal Investigator)

1996-01-01

The objective of this work is to approach the problem of determining the transport conditions (and effects of residual acceleration) during the plane-front directional solidification of a tin-bismuth alloy under low gravity conditions. The work involves using a combination of 2- and 3-D numerical models, scaling analyses, ID models and the results of ground-based and low-gravity experiments. The latter are to be conducted during the MEPHISTO experiment scheduled for USMP-3 in early 1996. The models will be used to predict the response of the transport conditions and consequent solute segregation in directionally solidifying tin-bismuth melt. Real-time Seebeck voltage variations across a Sn-Bi melt during directional solidification in MEPHISTO on USMP-1 show a distinct variation which can be correlated with thruster firings. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-solid interface. This allows a direct comparison of numerical simulations with the Seebeck signals obtained on USMP-1. The effects of such accelerations on composition for a directionally solidifying Sn-Bi alloy have been simulated numerically. USMP-1 acceleration data was used to assist in our choice of acceleration magnitude and orientation. The results show good agreement with experimental observations. The USMP-3 experiments took place earlier this year (February 22 through March 6). There were several differences between the USMP-3 experiments as compared to USMP-1. Firstly a more concentrated alloy was solidified and, secondly, Primary Reaction Control System thruster burns were requested at particular times during four separate growth runs. This allowed us to monitor the response Seebeck response under well-characterized growth conditions. In addition, we carried out simulations during the experiment in order to interpret the Seebeck signal. Preliminary results are described here.

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion.

PubMed

Zhou, Jiawei; Liao, Bolin; Qiu, Bo; Huberman, Samuel; Esfarjani, Keivan; Dresselhaus, Mildred S; Chen, Gang

2015-12-01

Although the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect--a coupling phenomenon between electrons and nonequilibrium phonons--in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to ∼ 0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.

A systematic study on the effect of electron beam irradiation on structural, electrical, thermo-electric power and magnetic property of LaCoO3

NASA Astrophysics Data System (ADS)

Benedict, Christopher J.; Rao, Ashok; Sanjeev, Ganesh; Okram, G. S.; Babu, P. D.

2016-01-01

In this communication, the effect of electron beam irradiation on the structural, electrical, thermo-electric power and magnetic properties of LaCoO3 cobaltites have been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with rhombohedral structure. Increase in electrical resistivity data is observed with increase in dosage of electron beam irradiation. Analysis of the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature regime for all samples. The Seebeck coefficient (S) of the pristine and the irradiated samples exhibits a crossover from positive to negative values, and a colossal value of Seebeck coefficient (32.65 mV/K) is obtained for pristine sample, however, the value of S decreases with increase in dosage of irradiation. The analysis of Seebeck coefficient data confirms that the small polaron hopping model is operative in the high temperature region. The magnetization results give clear evidence of increase in effective magnetic moment due to increase in dosage of electron beam irradiation.

Transport Properties of Bulk Thermoelectrics An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hsin; Porter, Wallace D; Bottner, Harold

2013-01-01

Recent research and development of high temperature thermoelectric materials has demonstrated great potential of converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The figure-of-merit, ZT, still needs to improve from the current value of 1.0 - 1.5 to above 2 to be competitive to other alternative technologies.more » In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as an important area for improving energy efficiency. The International Energy Agency (IEA) group under the implementing agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is Part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main focuses in Part I are on two electronic transport properties: Seebeck coefficient and electrical resistivity.« less

Transport Properties of Bulk Thermoelectrics—An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

NASA Astrophysics Data System (ADS)

Wang, Hsin; Porter, Wallace D.; Böttner, Harald; König, Jan; Chen, Lidong; Bai, Shengqiang; Tritt, Terry M.; Mayolet, Alex; Senawiratne, Jayantha; Smith, Charlene; Harris, Fred; Gilbert, Patricia; Sharp, Jeff W.; Lo, Jason; Kleinke, Holger; Kiss, Laszlo

2013-04-01

Recent research and development of high-temperature thermoelectric materials has demonstrated great potential for converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air-conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The dimensionless figure of merit, ZT, still needs to be improved from the current value of 1.0 to 1.5 to above 2.0 to be competitive with other alternative technologies. In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods, and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as a key component for improving energy efficiency. The International Energy Agency (IEA) group under the Implementing Agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main foci in part I are the measurement of two electronic transport properties: Seebeck coefficient and electrical resistivity.

Spin caloric effects in antiferromagnets assisted by an external spin current

NASA Astrophysics Data System (ADS)

Gomonay, O.; Yamamoto, Kei; Sinova, Jairo

2018-07-01

Searching for novel spin caloric effects in antiferromagnets, we study the properties of thermally activated magnons in the presence of an external spin current and temperature gradient. We predict the spin Peltier effect—generation of a heat flux by spin accumulation—in an antiferromagnetic insulator with cubic or uniaxial magnetic symmetry. This effect is related to the spin-current induced splitting of the relaxation times of the magnons with the opposite spin direction. We show that the Peltier effect can trigger antiferromagnetic domain wall motion with a force whose value grows with the temperature of a sample. At a temperature larger than the energy of the low-frequency magnons, this force is much larger than the force caused by direct spin transfer between the spin current and the domain wall. We also demonstrate that the external spin current can induce the magnon spin Seebeck effect. The corresponding Seebeck coefficient is controlled by the current density. These spin-current assisted caloric effects open new ways for the manipulation of the magnetic states in antiferromagnets.

Tuning of the Seebeck Coefficient and the Electrical and Thermal Conductivity of Hybrid Materials Based on Polypyrrole and Bismuth Nanowires.

PubMed

Hnida, Katarzyna E; Pilarczyk, Kacper; Knutelski, Marcin; Marzec, Mateusz; Gajewska, Marta; Kosonowski, Artur; Chlebda, Damian; Lis, Bartłomiej; Przybylski, Marek

2018-04-06

The growing demand for clean energy catalyzes the development of new devices capable of generating electricity from renewable energy resources. One of the possible approaches focuses on the use of thermoelectric materials (TE), which may utilize waste heat, water, and solar thermal energy to generate electrical power. An improvement of the performance of such devices may be achieved through the development of composites made of an organic matrix filled with nanostructured thermoelectric materials working in a synergetic way. The first step towards such designs requires a better understanding of the fundamental interactions between available materials. In this paper, this matter is investigated and the questions regarding the change of electrical and thermal properties of nanocomposites based on low-conductive polypyrrole enriched with bismuth nanowires of well-defined geometry and morphology is answered. It is clearly demonstrated that the electrical conductivity and the Seebeck coefficient may be tuned either simultaneously or separately within particular Bi NWs content ranges, and that both parameters may be increased at the same time. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Detailed Uncertainty Analysis of the ZEM-3 Measurement System

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

The measurement of Seebeck coefficient and electrical resistivity are critical to the investigation of all thermoelectric systems. Therefore, it stands that the measurement uncertainty must be well understood to report ZT values which are accurate and trustworthy. A detailed uncertainty analysis of the ZEM-3 measurement system has been performed. The uncertainty analysis calculates error in the electrical resistivity measurement as a result of sample geometry tolerance, probe geometry tolerance, statistical error, and multi-meter uncertainty. The uncertainty on Seebeck coefficient includes probe wire correction factors, statistical error, multi-meter uncertainty, and most importantly the cold-finger effect. The cold-finger effect plagues all potentiometric (four-probe) Seebeck measurement systems, as heat parasitically transfers through thermocouple probes. The effect leads to an asymmetric over-estimation of the Seebeck coefficient. A thermal finite element analysis allows for quantification of the phenomenon, and provides an estimate on the uncertainty of the Seebeck coefficient. The thermoelectric power factor has been found to have an uncertainty of +9-14 at high temperature and 9 near room temperature.

Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

NASA Astrophysics Data System (ADS)

Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

2013-07-01

We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Dehua; Liu, Qing; Tisdale, Jeremy

This paper reports Seebeck effects driven by both surface polarization difference and entropy difference by using intramolecular charge-transfer states in n-type and p-type conjugated polymers, namely IIDT and IIDDT, based on vertical conductor/polymer/conductor thin-film devices. Large Seebeck coefficients of -898 V/K and 1300 V/K from are observed from n-type IIDT p-type IIDDT, respectively, when the charge-transfer states are generated by a white light illumination of 100 mW/cm2. Simultaneously, electrical conductivities are increased from almost insulating states in dark condition to conducting states under photoexcitation in both n-type IIDT and p-type IIDDT devices. We find that the intramolecular charge-transfer states canmore » largely enhance Seebeck effects in the n-type IIDT and p-type IIDDT devices driven by both surface polarization difference and entropy difference. Furthermore, the Seebeck effects can be shifted between polarization and entropy regimes when electrical conductivities are changed. This reveals a new concept to develop Seebeck effects by controlling polarization and entropy regimes based on charge-transfer states in vertical conductor/polymer/conductor thin-film devices.« less

The effects of transverse magnetic field and local electronic interaction on thermoelectric properties of monolayer graphene

NASA Astrophysics Data System (ADS)

Rezania, Hamed; Azizi, Farshad

2018-02-01

We study the effects of a transverse magnetic field and electron doping on the thermoelectric properties of monolayer graphene in the context of Hubbard model at the antiferromagnetic sector. In particular, the temperature dependence of thermal conductivity and Seebeck coefficient has been investigated. Mean field approximation has been employed in order to obtain the electronic spectrum of the system in the presence of local electron-electron interaction. Our results show the peak in thermal conductivity moves to higher temperatures with increase of both chemical potential and Hubbard parameter. Moreover the increase of magnetic field leads to shift of peak in temperature dependence of thermal conductivity to higher temperatures. Finally the behavior of Seebeck coefficient in terms of temperature has been studied and the effects of magnetic field and Hubbard parameter on this coefficient have been investigated in details.

Anisotropy of the Seebeck Coefficient in the Cuprate Superconductor YBa2 Cu3 Oy : Fermi-Surface Reconstruction by Bidirectional Charge Order

NASA Astrophysics Data System (ADS)

Cyr-Choinière, O.; Badoux, S.; Grissonnanche, G.; Michon, B.; Afshar, S. A. A.; Fortier, S.; LeBoeuf, D.; Graf, D.; Day, J.; Bonn, D. A.; Hardy, W. N.; Liang, R.; Doiron-Leyraud, N.; Taillefer, Louis

2017-07-01

The Seebeck coefficient S of the cuprate YBa2 Cu3 Oy is measured in magnetic fields large enough to suppress superconductivity, at hole dopings p =0.11 and p =0.12 , for heat currents along the a and b directions of the orthorhombic crystal structure. For both directions, S /T decreases and becomes negative at low temperature, a signature that the Fermi surface undergoes a reconstruction due to broken translational symmetry. Above a clear threshold field, a strong new feature appears in Sb, for conduction along the b axis only. We attribute this feature to the onset of 3D-coherent unidirectional charge-density-wave modulations seen by x-ray diffraction, also along the b axis only. Because these modulations have a sharp onset temperature well below the temperature where S /T starts to drop towards negative values, we infer that they are not the cause of Fermi-surface reconstruction. Instead, the reconstruction must be caused by the quasi-2D bidirectional modulations that develop at significantly higher temperature. The unidirectional order only confers an additional anisotropy to the already reconstructed Fermi surface, also manifest as an in-plane anisotropy of the resistivity.

Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

NASA Astrophysics Data System (ADS)

Elsayed, H.; Olguín, D.; Cantarero, A.

2017-12-01

This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

Side-Chain Effects on the Thermoelectric Properties of Fluorene-Based Copolymers.

PubMed

Liang, Ansheng; Zhou, Xiaoyan; Zhou, Wenqiao; Wan, Tao; Wang, Luhai; Pan, Chengjun; Wang, Lei

2017-09-01

Three conjugated polymers with alkyl chains of different lengths are designed and synthesized, and their structure-property relationship as organic thermoelectric materials is systematically elucidated. All three polymers show similar photophysical properties, thermal properties, and mechanical properties; however, their thermoelectric performance is influenced by the length of their side chains. The length of the alkyl chain significantly influences the electrical conductivity of the conjugated polymers, and polymers with a short alkyl chain exhibit better conductivity than those with a long alkyl chain. The length of the alkyl chain has little effect on the Seebeck coefficient. Only a slight increase in the Seebeck coefficient is observed with the increasing length of the alkyl chain. The purpose of this study is to provide comprehensive insight into fine-tuning the thermoelectric properties of conjugated polymers as a function of side-chain engineering, thereby providing a novel perspective into the design of high-performance thermoelectric conjugated polymers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photo-controllable thermoelectric properties with reversibility and photo-thermoelectric effects of tungsten trioxide accompanied by its photochromic phenomenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azuma, Chiori; Kawano, Takuto; Kakemoto, Hirofumi

2014-11-07

The addition of photo-controllable properties to tungsten trioxide (WO{sub 3}) is of interest for developing practical applications of WO{sub 3} as well as for interpreting such phenomena from scientific viewpoints. Here, a sputtered crystalline WO{sub 3} thin film generated thermoelectric power due to ultraviolet (UV) light-induced band-gap excitation and was accompanied by a photochromic reaction resulting from generating W{sup 5+} ions. The thermoelectric properties (electrical conductivity (σ) and Seebeck coefficient (S)) and coloration of WO{sub 3} could be reversibly switched by alternating the external stimulus between UV light irradiation and dark storage. After irradiating the film with UV light, σmore » increased, whereas the absolute value of S decreased, and the photochromic (coloration) reaction was detected. Notably, the opposite behavior was exhibited by WO{sub 3} after dark storage, and this reversible cycle could be repeated at least three times. Moreover, photo-thermoelectric effects (photo-conductive effect (photo-conductivity, σ{sub photo}) and photo-Seebeck effect (photo-Seebeck coefficient, S{sub photo})) were also detected in response to visible-light irradiation of the colored WO{sub 3} thin films. Under visible-light irradiation, σ{sub photo} and the absolute value of S{sub photo} increased and decreased, respectively. These effects are likely attributable to the excitation of electrons from the mid-gap visible light absorption band (W{sup 5+} state) to the conduction band of WO{sub 3}. Our findings demonstrate that the simultaneous, reversible switching of multiple properties of WO{sub 3} thin film is achieved by the application of an external stimulus and that this material exhibits photo-thermoelectric effects when irradiated with visible-light.« less

The Effects of Excess Co on the Phase Composition and Thermoelectric Properties of Half-Heusler NbCoSb.

PubMed

Huang, Lihong; Wang, Junchen; Chen, Xi; He, Ran; Shuai, Jing; Zhang, Jianjun; Zhang, Qinyong; Ren, Zhifeng

2018-05-11

NbCoSb with nominal 19 valence electrons, and is supposed to be metallic, has recently been reported to also exhibit the thermoelectric properties of a heavily doped n-type semiconductor. In this study, we prepared Co-rich NbCo 1+ x Sb samples ( x = 0, 0.2, 0.3, 0.4, 0.5), and their phase compositions, microstructures and thermoelectric properties were investigated. The Seebeck coefficient increased a great deal with increasing x , due to decreasing carrier concentration, and the total thermal conductivity reduced mainly because of declining κ e . Finally, a peak thermoelectric figure of merit, ZT , was about 0.46 for NbCo 1.3 Sb at 973 K. This enhancement was mainly attributed to the reduction of electric thermal conductivity and the increase of Seebeck coefficient. The excess Co had effects on the carrier concentration, deformation potential E def and DOS effective mass m * . Adding an excessive amount of Co leads to a very high E def , which was detrimental for transport characteristics.

Enhancement of the thermoelectric figure of merit in DNA-like systems induced by Fano and Dicke effects.

PubMed

Fu, Hua-Hua; Gu, Lei; Wu, Dan-Dan; Zhang, Zu-Quan

2015-04-28

We report a theoretical study highlighting the thermoelectric properties of biological and synthetic DNA molecules. Based on an effective tight-binding model of duplex DNA and by using the nonequilibrium Green's function technique, the thermal conductance, electrical conductance, Seebeck coefficient and thermoelectric figure of merit in the system are numerically calculated by varying the asymmetries of energies and electronic hoppings in the backbone sites to simulate the environmental complications and fluctuations. We find that due to the multiple transport paths in the DNA molecule, the Fano antiresonance occurs, and enhances the Seebeck coefficient and the figure of merit. When the energy difference is produced in every opposite backbone site, the Dicke effect appears. This effect gives rise to a semiconducting-metallic transition, and enhances the thermoelectric efficiency of the DNA molecule remarkably. Moreover, as the Fano antiresonance point is close to the Dicke resonance one, a giant enhancement in the thermoelectric figure of merit in the DNA molecule has been found. These results provide a scenario to obtain effective routes to enhance the thermoelectric efficiency in the DNA molecules, and suggest perspectives for future experiments intending to control the thermoelectric transport in DNA-like nanodevices.

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

PubMed

Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

2015-10-01

We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

NASA Astrophysics Data System (ADS)

Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

2018-05-01

Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

Competing dopants grain boundary segregation and resultant seebeck coefficient and power factor enhancement of thermoelectric calcium cobaltite ceramics

DOE PAGES

Boyle, Cullen; Liang, Liang; Chen, Yun; ...

2017-06-06

Here, the present work demonstrates the feasibility of increasing the values of Seebeck coefficient S and power factor of calcium cobaltite Ca 3Co 4O 9 ceramics through competing dopant grain boundary segregation. The nominal chemistry of the polycrystalline material system investigated is Ca 3–xBi xBa yCo 4O 9 with simultaneous stoichiometric substitution of Bi for Ca and non-stoichiometric addition of minute amounts of Ba. There is continuous increase of S due to Bi substitution and Ba addition. The electrical resistivity also changes upon doping. Overall, the power factor of best performing Bi and Ba co-doped sample is about 0.93 mWmore » m –1 K –2, which is one of the highest power factor values ever reported for Ca 3Co 4O 9, and corresponds to a factor of 3 increase compared to that of the baseline composition Ca 3Co 4O 9. Systematic nanostructure and chemistry characterization was performed on the samples with different nominal compositions. When Bi is the only dopant in Ca 3Co 4O 9, it can be found at both the grain interior and the grain boundaries GBs as a result of segregation. When Bi and Ba are added simultaneously as dopants, competing processes lead to the segregation of Ba and depletion of Bi at the GBs, with Bi present only in the grain interior. Bi substitution in the lattice increases the S at both the low and high temperature regimes, while the segregation of Ba at the GBs dramatically increase the S at low temperature regime.« less

Competing dopants grain boundary segregation and resultant seebeck coefficient and power factor enhancement of thermoelectric calcium cobaltite ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, Cullen; Liang, Liang; Chen, Yun

Here, the present work demonstrates the feasibility of increasing the values of Seebeck coefficient S and power factor of calcium cobaltite Ca 3Co 4O 9 ceramics through competing dopant grain boundary segregation. The nominal chemistry of the polycrystalline material system investigated is Ca 3–xBi xBa yCo 4O 9 with simultaneous stoichiometric substitution of Bi for Ca and non-stoichiometric addition of minute amounts of Ba. There is continuous increase of S due to Bi substitution and Ba addition. The electrical resistivity also changes upon doping. Overall, the power factor of best performing Bi and Ba co-doped sample is about 0.93 mWmore » m –1 K –2, which is one of the highest power factor values ever reported for Ca 3Co 4O 9, and corresponds to a factor of 3 increase compared to that of the baseline composition Ca 3Co 4O 9. Systematic nanostructure and chemistry characterization was performed on the samples with different nominal compositions. When Bi is the only dopant in Ca 3Co 4O 9, it can be found at both the grain interior and the grain boundaries GBs as a result of segregation. When Bi and Ba are added simultaneously as dopants, competing processes lead to the segregation of Ba and depletion of Bi at the GBs, with Bi present only in the grain interior. Bi substitution in the lattice increases the S at both the low and high temperature regimes, while the segregation of Ba at the GBs dramatically increase the S at low temperature regime.« less

Effect of microstructure on the thermoelectric performance of La{sub 1−x}Sr{sub x}CoO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Viskadourakis, Z.; Department of Mechanical and Manufacturing Engineering, University of Cypruss, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia; Athanasopoulos, G.I.

We present a case where the microstructure has a profound effect on the thermoelectric properties of oxide compounds. Specifically, we have investigated the effect of different sintering treatments on La{sub 1−x}Sr{sub x}CoO{sub 3} samples synthesized using the Pechini method. We found that the samples, which are dense and consist of inhomogeneously-mixed grains of different size, exhibit both higher Seebeck coefficient and thermoelectric figure of merit than the samples, which are porous and consist of grains with almost identical size. The enhancement of Seebeck coefficient in the dense samples is attributed to the so-called “energy-filtering” mechanism that is related to themore » energy barrier of the grain boundary. On the other hand, the thermal conductivity for the porous compounds is significantly reduced in comparison to the dense compounds. It is suggested that a fine-manipulation of grain size ratio combined with a fine-tuning of porosity could considerably enhance the thermoelectric performance of oxides. - Graphical abstract: The enhancement of the dimensionless thermoelectric figure ZT of merit is presented for two equally Sr-doped LaCoO3 compounds, possessing different microstructure, indicating the effect of the latter to the thermoelectric performance of the La{sub 1−x}Sr{sub x}CoO{sub 3} solid solution. - Highlights: • Electrical and thermal transport properties are affected by the microstructure in La{sub 1−x}Sr{sub x}CoO{sub 3} polycrystalline materials. • Coarse/fine grain size distribution enhances the Seebeck coefficient. • Porosity reduces the thermal conductivity in La{sub 1−x}Sr{sub x}CoO{sub 3} polycrystalline samples. • The combination of large/small grain ratio distribution with the high porosity may result to the enhancement of the thermoelectric performance of the material.« less

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

PubMed

Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

2017-11-01

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

Model for Increasing the Power Obtained from a Thermoelectric Generator Module

NASA Astrophysics Data System (ADS)

Huang, Gia-Yeh; Hsu, Cheng-Ting; Yao, Da-Jeng

2014-06-01

We have developed a model for finding the most efficient way of increasing the power obtained from a thermoelectric generator (TEG) module with a variety of operating conditions and limitations. The model is based on both thermoelectric principles and thermal resistance circuits, because a TEG converts heat into electricity consistent with these two theories. It is essential to take into account thermal contact resistance when estimating power generation. Thermal contact resistance causes overestimation of the measured temperature difference between the hot and cold sides of a TEG in calculation of the theoretical power generated, i.e. the theoretical power is larger than the experimental power. The ratio of the experimental open-loop voltage to the measured temperature difference, the effective Seebeck coefficient, can be used to estimate the thermal contact resistance in the model. The ratio of the effective Seebeck coefficient to the theoretical Seebeck coefficient, the Seebeck coefficient ratio, represents the contact conditions. From this ratio, a relationship between performance and different variables can be developed. The measured power generated by a TEG module (TMH400302055; Wise Life Technology, Taiwan) is consistent with the result obtained by use of the model; the relative deviation is 10%. Use of this model to evaluate the most efficient means of increasing the generated power reveals that the TEG module generates 0.14 W when the temperature difference is 25°C and the Seebeck coefficient ratio is 0.4. Several methods can be used triple the amount of power generated. For example, increasing the temperature difference to 43°C generates 0.41 W power; improving the Seebeck coefficient ratio to 0.65 increases the power to 0.39 W; simultaneously increasing the temperature difference to 34°C and improving the Seebeck coefficient ratio to 0.5 increases the power to 0.41 W. Choice of the appropriate method depends on the limitations of system, the cost, and

Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)

NASA Technical Reports Server (NTRS)

Alexander, J. Iwan D.; Favier, J.-J.; Garandet, J.-P.

1999-01-01

Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, have been correlated with well-characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us to make the first quantitative characterization of actual g-jitter effects on an actual crystal growth experiment and to calibrate our models of g-jitter effects on crystal growth.

Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)

NASA Technical Reports Server (NTRS)

Favier, J.-J.; Iwan, J.; Alexander, D.; Garandet, J.-P.

1998-01-01

Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, can be correlated with well characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us, for the first time, to quantitatively characterize actual g-jitter effects on an actual crystal growth experiment and to properly calibrate our models of g-jitter effects on crystal growth.

A review of carrier thermoelectric-transport theory in organic semiconductors.

PubMed

Lu, Nianduan; Li, Ling; Liu, Ming

2016-07-20

Carrier thermoelectric-transport theory has recently become of growing interest and numerous thermoelectric-transport models have been proposed for organic semiconductors, due to pressing current issues involving energy production and the environment. The purpose of this review is to provide a theoretical description of the thermoelectric Seebeck effect in organic semiconductors. Special attention is devoted to the carrier concentration, temperature, polaron effect and dipole effect dependence of the Seebeck effect and its relationship to hopping transport theory. Furthermore, various theoretical methods are used to discuss carrier thermoelectric transport. Finally, an outlook of the remaining challenges ahead for future theoretical research is provided.

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Special Important Aspects of the Thomson Effect

NASA Astrophysics Data System (ADS)

Lashkevych, Igor; Velázquez, J. E.; Titov, Oleg Yu.; Gurevich, Yuri G.

2018-06-01

A comprehensive study of the mechanisms of heating and cooling originating from an electrical current in semiconductor devices is reported. The variation in temperature associated with the Peltier effect is not related to the presence of heat sources and sinks if the heat flux is correctly determined. The Thomson effect is commonly regarded as a heat source/sink proportional to the Thomson coefficient, which is added to the Joule heating. In the present work, we will show that this formulation of the Thomson effect is not sufficiently clear. When the heat flux is correctly defined, the Thomson heat source/sink is proportional to the Seebeck coefficient. In the conditions in which the Peltier effect takes place, the temperature gradient is created, and, consequently, the Thomson effect will occur naturally.

Special Important Aspects of the Thomson Effect

NASA Astrophysics Data System (ADS)

Lashkevych, Igor; Velázquez, J. E.; Titov, Oleg Yu.; Gurevich, Yuri G.

2018-03-01

A comprehensive study of the mechanisms of heating and cooling originating from an electrical current in semiconductor devices is reported. The variation in temperature associated with the Peltier effect is not related to the presence of heat sources and sinks if the heat flux is correctly determined. The Thomson effect is commonly regarded as a heat source/sink proportional to the Thomson coefficient, which is added to the Joule heating. In the present work, we will show that this formulation of the Thomson effect is not sufficiently clear. When the heat flux is correctly defined, the Thomson heat source/sink is proportional to the Seebeck coefficient. In the conditions in which the Peltier effect takes place, the temperature gradient is created, and, consequently, the Thomson effect will occur naturally.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets.

PubMed

Cramer, Joel; Guo, Er-Jia; Geprägs, Stephan; Kehlberger, Andreas; Ivanov, Yurii P; Ganzhorn, Kathrin; Della Coletta, Francesco; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Kosel, Jürgen; Kläui, Mathias; Goennenwein, Sebastian T B

2017-06-14

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Magnon mode selective spin transport in compensated ferrimagnets

DOE PAGES

Cramer, Joel; Guo, Er -Jia; Geprags, Stephan; ...

2017-04-13

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify themore » magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. As a result, the comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.« less

Magnon mode selective spin transport in compensated ferrimagnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cramer, Joel; Guo, Er -Jia; Geprags, Stephan

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify themore » magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. As a result, the comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.« less

Effects of partial La filling and Sb vacancy defects on CoS b 3 skutterudites

DOE PAGES

Hu, Chongze; Zeng, Xiaoyu; Liu, Yufei; ...

2017-04-25

Over the past decade, the open frame ("cagey") structure of CoSb 3 skutterudite has invited intensive filling studies with various rare-earth elements for delivering state-of-the-art mid-temperature thermoelectric performance. In order to rationalize previously reported experimental results and provide new insight into the underexplored roles of La fillers and Sb vacancies, ab initio density functional theory studies, along with semi-classical Boltzmann transport theory calculations, are performed for pristine CoSb 3 of different lattice settings and La-filled CoSb 3 with and without Sb s mono- and di-vacancy defects. We examine the effects of van der Waals (vdW) interactions, spin-orbit coupling (SOC), spinmore » polarization, partial La-filling, and Sb vacancy defects on the structural, electronic, and thermoelectric properties. The vdW interactions profoundly affect the lattice constant, which in turn affects the band gap. The SOC shows minor effects on the electronic and thermoelectric properties. The peculiar quasi-Dirac band in the pristine CoSb 3 largely survives La filling but not Sb vacancies, which instead introduce dispersive bands in the band gap region. Importantly, the band structure, density of states, and Fermi surface of La-filled CoSb 3 are significantly spin polarized, giving rise to spin-dependent thermoelectric properties. Seebeck coefficients directly calculated as a function of chemical potential are interpreted in connection with the electronic structures. Temperature-dependent Seebeck coefficients derived for the experimentally studied materials agree well with available experimental data. Seebeck coefficients obtained as a function of charge carrier concentration corroborate a thermoelectrically favorable role at high filling fractions played by the electron/hole pockets on the Fermi surface associated with the degenerate valleys/hills in the conduction/valence bands, respectively. Our results serve to advance the understanding of CoSb 3

Effects of partial La filling and Sb vacancy defects on CoS b 3 skutterudites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Chongze; Zeng, Xiaoyu; Liu, Yufei

Over the past decade, the open frame ("cagey") structure of CoSb 3 skutterudite has invited intensive filling studies with various rare-earth elements for delivering state-of-the-art mid-temperature thermoelectric performance. In order to rationalize previously reported experimental results and provide new insight into the underexplored roles of La fillers and Sb vacancies, ab initio density functional theory studies, along with semi-classical Boltzmann transport theory calculations, are performed for pristine CoSb 3 of different lattice settings and La-filled CoSb 3 with and without Sb s mono- and di-vacancy defects. We examine the effects of van der Waals (vdW) interactions, spin-orbit coupling (SOC), spinmore » polarization, partial La-filling, and Sb vacancy defects on the structural, electronic, and thermoelectric properties. The vdW interactions profoundly affect the lattice constant, which in turn affects the band gap. The SOC shows minor effects on the electronic and thermoelectric properties. The peculiar quasi-Dirac band in the pristine CoSb 3 largely survives La filling but not Sb vacancies, which instead introduce dispersive bands in the band gap region. Importantly, the band structure, density of states, and Fermi surface of La-filled CoSb 3 are significantly spin polarized, giving rise to spin-dependent thermoelectric properties. Seebeck coefficients directly calculated as a function of chemical potential are interpreted in connection with the electronic structures. Temperature-dependent Seebeck coefficients derived for the experimentally studied materials agree well with available experimental data. Seebeck coefficients obtained as a function of charge carrier concentration corroborate a thermoelectrically favorable role at high filling fractions played by the electron/hole pockets on the Fermi surface associated with the degenerate valleys/hills in the conduction/valence bands, respectively. Our results serve to advance the understanding of CoSb 3

Complex Terahertz and Direct Current Inverse Spin Hall Effect in YIG/Cu1-xIrx Bilayers Across a Wide Concentration Range.

PubMed

Cramer, Joel; Seifert, Tom; Kronenberg, Alexander; Fuhrmann, Felix; Jakob, Gerhard; Jourdan, Martin; Kampfrath, Tobias; Kläui, Mathias

2018-02-14

We measure the inverse spin Hall effect of Cu 1-x Ir x thin films on yttrium iron garnet over a wide range of Ir concentrations (0.05 ⩽ x ⩽ 0.7). Spin currents are triggered through the spin Seebeck effect, either by a continuous (dc) temperature gradient or by ultrafast optical heating of the metal layer. The spin Hall current is detected by electrical contacts or measurement of the emitted terahertz radiation. With both approaches, we reveal the same Ir concentration dependence that follows a novel complex, nonmonotonous behavior as compared to previous studies. For small Ir concentrations a signal minimum is observed, whereas a pronounced maximum appears near the equiatomic composition. We identify this behavior as originating from the interplay of different spin Hall mechanisms as well as a concentration-dependent variation of the integrated spin current density in Cu 1-x Ir x . The coinciding results obtained for dc and ultrafast stimuli provide further support that the spin Seebeck effect extends to terahertz frequencies, thus enabling a transfer of established spintronic measurement schemes into the terahertz regime. Our findings also show that the studied material allows for efficient spin-to-charge conversion even on ultrafast time scales.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

NASA Astrophysics Data System (ADS)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

PubMed

Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

2016-10-05

Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K 2 at 856 K in Ag and In co-doped SnTe (i.e., SnAg x In x Te 1+2x ). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg 0.025 In 0.025 Te 1.05 at 856 K.

Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline

NASA Astrophysics Data System (ADS)

Zhang, Peijian; Meng, Yang; Liu, Ziyu; Li, Dong; Su, Tao; Meng, Qingyu; Mao, Qi; Pan, Xinyu; Chen, Dongmin; Zhao, Hongwu

2012-03-01

The thermoelectric properties of the bistable resistance states in Nb doped SrTiO3 single crystal have been investigated. The Seebeck coefficients for both low and high resistance states change linearly with temperature. The three-terminals contrast measurement demonstrates that a large fraction of the voltage drop is applied at the tiny volume near the bottom interface between the electrode and the oxide bulk. Therefore, the metallic oxide bulk plays a dominant role in the temperature dependence of Seebeck coefficients. The thermoelectric properties of new resistance switching (RS) devices with minimized non-RS volume could be exploited for the RS mechanism and novel applications.

Thermoelectric Properties of Bi₂Te₃: CuI and the Effect of Its Doping with Pb Atoms.

PubMed

Han, Mi-Kyung; Jin, Yingshi; Lee, Da-Hee; Kim, Sung-Jin

2017-10-26

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi₂Te₃, n -type Bi₂Te₃ co-doped with x at % CuI and 1/2 x at % Pb ( x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi₂Te₃ were measured in the temperature range from 300 K to 523 K, and compared to corresponding x % of CuI-doped Bi₂Te₃ and undoped Bi₂Te₃. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi₂Te₃ rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κ tot ) of co-doped samples (κ tot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi₂Te₃ (κ tot ~ 1.5 W/m∙K at 300 K) and undoped Bi₂Te₃ (κ tot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi₂Te 3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi₂Te 3 and its operating temperature can be controlled by co-doping.

Nano- and Microstructure Engineering: An Effective Method for Creating High Efficiency Magnesium Silicide Based Thermoelectrics.

PubMed

Farahi, Nader; Prabhudev, Sagar; Botton, Gianluigi A; Salvador, James R; Kleinke, Holger

2016-12-21

Considering the effect of CO 2 emission together with the depletion of fossil fuel resources on future generations, industries in particular the transportation sector are in deep need of a viable solution to follow the environmental regulation to limit the CO 2 emission. Thermoelectrics may be a practical choice for recovering the waste heat, provided their conversion energy can be improved. Here, the high temperature thermoelectric properties of high purity Bi doped Mg 2 (Si,Sn) are presented. The samples Mg 2 Si 1-x-y Sn x Bi y with x(Sn) ≥ 0.6 and y(Bi) ≥ 0.03 exhibited electrical conductivities and Seebeck coefficients of approximately 1000 Ω -1 cm -1 and -200 μV K -1 at 773 K, respectively, attributable to a combination of band convergence and microstructure engineering through ball mill processing. In addition to the high electrical conductivity and Seebeck coefficient, the thermal conductivity of the solid solutions reached values below 2.5 W m -1 K -1 due to highly efficient phonon scattering from mass fluctuation and grain boundary effects. These properties combined for zT values of 1.4 at 773 K with an average zT of 0.9 between 400 and 773 K. The transport properties were both highly reproducible across several measurement systems and were stable with thermal cycling.

Thermally Generated Spin Signals in a Nondegenerate Silicon Spin Valve

NASA Astrophysics Data System (ADS)

Yamashita, Naoto; Ando, Yuichiro; Koike, Hayato; Miwa, Shinji; Suzuki, Yoshishige; Shiraishi, Masashi

2018-05-01

Thermally generated spin signals are observed in a nondegenerate Si spin valve. The spin-dependent Seebeck effect is used for thermal spin-signal generation. A thermal gradient of about 200 mK at the interface of Fe and Si enables the generation of a spin voltage of 8 μ V at room temperature. A simple expansion of the conventional spin-drift-diffusion model that takes into account the spin-dependent Seebeck effect shows that semiconductor materials are more promising for thermal spin-signal generation comparing than metallic materials, and thus enable efficient heat recycling in semiconductor spin devices.

Relation of planar Hall and planar Nernst effects in thin film permalloy

NASA Astrophysics Data System (ADS)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Effect of crystal size distribution on thermoelectric performance for Lanthanum-doped strontium titanate bulk material

NASA Astrophysics Data System (ADS)

Zhang, Boyu; Wang, Jun; Yaer, Xinba; Huo, Zhenzhen; Wu, Yin; Li, Yan; Miao, Lei; Liu, Chengyan; Zou, Tao; Ma, Wen

2015-07-01

Effect of crystal size distribution on thermoelectric performance of Lanthanum-doped strontium titanate (La-SrTiO3) ceramics are investigated in this study. Thermoelectric performance measurement, coupled with microstructure studies, shows that the electrical conductivity strongly depends on the crystal size, potential barrier on the grain boundary and porosity. Meantime, because the average potential barriers height are increased along with the reduction of crystal size, the Seebeck coefficients are increased by energy filtering effect at the large number of grain boundaries. As a result, by controlling of crystal size distribution, ZT value of La-SrTiO3 is improved.

Band structure modification of the thermoelectric Heusler-phase TiFe2Sn via Mn substitution.

PubMed

Zou, Tianhua; Jia, Tiantian; Xie, Wenjie; Zhang, Yongsheng; Widenmeyer, Marc; Xiao, Xingxing; Weidenkaff, Anke

2017-07-19

Doping (or substitution)-induced modification of the electronic structure to increase the electronic density of states (eDOS) near the Fermi level is considered as an effective strategy to enhance the Seebeck coefficient, and may consequently boost the thermoelectric performance. Through density-functional theory calculations of Mn-substituted TiFe 2-x Mn x Sn compounds, we demonstrate that the d-states of the substituted Mn atoms induce a strong resonant level near the Fermi energy. Our experimental results are in good agreement with the calculations. They show that Mn substitution results in a large increase of the Seebeck coefficient, arising from an enhanced eDOS in Heusler compounds. The results prove that a proper substitution position and element selection can increase the eDOS, leading to a higher Seebeck coefficient and thermoelectric performance of ecofriendly materials.

Direct detection of spin Nernst effect in platinum

NASA Astrophysics Data System (ADS)

Bose, A.; Bhuktare, S.; Singh, H.; Dutta, S.; Achanta, V. G.; Tulapurkar, A. A.

2018-04-01

Generation of spin current lies at the heart of spintronic research. The spin Hall effect and the spin Seebeck effect have drawn considerable attention in the last few years to create pure spin current by heavy metals and ferromagnets, respectively. In this work, we show the direct evidence of heat current to spin current conversion in non-magnetic Platinum by the spin Nernst effect (SNE) at room temperature. This is the thermal analogue of the spin Hall effect in non-magnets. We have shown that the 8 K/μm thermal gradient in Pt can lead to the generation of pure spin current density of the order of 108 A/m2 by virtue of SNE. This opens up an additional possibility to couple the relativistic spin-orbit interaction with the thermal gradient for spintronic applications.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE PAGES

Wang, H.; Leonard, K. J.

2017-07-25

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Leonard, K. J.

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

ROLE OF THE NETWORK FORMER IN SEMICONDUCTING OXIDE GLASSES.

DTIC Science & Technology

SEMICONDUCTOR DEVICES, * GLASS ), (*ELECTRICAL NETWORKS, GLASS ), ELECTRICAL PROPERTIES, SEEBECK EFFECT, BORATES, PHOSPHATES, ELECTRICAL RESISTANCE, X RAY DIFFRACTION, ANNEALING, OXIDATION, OXIDES, ELECTRODES, VANADIUM

Self-Consistent Drift-Diffusion Transport in Thermoelectrics and Implications for Measuring the Scattering Parameter

NASA Astrophysics Data System (ADS)

Santhanam, Parthiban; Ram, Rajeev J.

2010-09-01

We present a microscopic model of the Seebeck effect based on a generalized drift-diffusion equation and use it to predict a simple relationship between the electric field within an operating thermoelectric and the scattering parameter. Our model replicates existing theoretical results and permits an intuitive spatial picture of the Seebeck effect. A similar formalism was independently developed by Cai and Mahan, but this work includes numerical results for high dopant concentrations where the thermoelectric power factor is maximized. Based on these results, we propose that measurement of the bulk electric field should constitute a measurement of the scattering parameter, the improvement of which could lead to greater thermoelectric efficiency.

Enhanced thermo-spin effects in iron-oxide/metal multilayers

NASA Astrophysics Data System (ADS)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

Photo- and gas-tuned, reversible thermoelectric properties and anomalous photo-thermoelectric effects of platinum-loaded tungsten trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Kenta; Watanabe, Takuya; Kakemoto, Hirofumi

We report the photo- and gas-controllable properties of platinum-loaded tungsten trioxide (Pt/WO{sub 3}), which is of interest for developing practical applications of WO{sub 3} as well as for interpreting such phenomena from scientific viewpoints. Here, a Pt/WO{sub 3} thin film generated a thermoelectric power due to the ultraviolet-light-induced band-gap excitation (photochromic (PC) reaction) and/or dark storage in formic acid vapor (gaschromic (GC) reaction) in the absence of O{sub 2}, resulting from the generation of W{sup 5+} ions. After such chromic reactions, the electrical conductivity (σ) is increased, whereas the absolute value of the Seebeck coefficient (S) is decreased. The changesmore » in σ and S and their rate of change for consistency increased in the order of: during the PC reaction < during the GC reaction < during simultaneous PC and GC reactions. The opposite behaviors, a decrease in σ and an increase in S, were exhibited by Pt/WO{sub 3} in the presence of O{sub 2} after dark storage or visible-light irradiation. This reversible cycle could be repeated. Moreover, anomalous, nontrivial photo-thermoelectric effects (a photoconductive effect (photoconductivity, σ{sub photo}) and a photo-Seebeck effect (photo-Seebeck coefficient, S{sub photo})) were also detected in response to the visible-light irradiation of Pt/WO{sub 3} in the absence of O{sub 2} after chromic reactions. Under visible-light irradiation, both σ{sub photo} and the absolute value of S{sub photo} are increased. After the irradiation, both values were decreased, that is, σ and the absolute value of S were smaller than σ{sub photo} and the absolute value of S{sub photo}, respectively. These effects are likely to be due to the photoinduced charge carriers and the accumulated electrons in Pt contributing to the increase in σ{sub photo}. In addition, electrons are extracted from the W{sup 5+} state, decreasing the number of W{sup 5+} in H{sub x}WO{sub 3} and thus contributing

Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates.

PubMed

Choi, Jinyong; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig

2016-12-02

In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K -2 m -1 ) for n-type SiNWs, and from 453 to 944 μW K -2 m -1 ) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

Strain-induced bi-thermoelectricity in tapered carbon nanotubes

NASA Astrophysics Data System (ADS)

Algharagholy, L. A. A.; Pope, T.; Lambert, C. J.

2018-03-01

We show that carbon-based nanostructured materials are a novel testbed for controlling thermoelectricity and have the potential to underpin the development of new cost-effective environmentally-friendly thermoelectric materials. In single-molecule junctions, it is known that transport resonances associated with the discrete molecular levels play a key role in the thermoelectric performance, but such resonances have not been exploited in carbon nanotubes (CNTs). Here we study junctions formed from tapered CNTs and demonstrate that such structures possess transport resonances near the Fermi level, whose energetic location can be varied by applying strain, resulting in an ability to tune the sign of their Seebeck coefficient. These results reveal that tapered CNTs form a new class of bi-thermoelectric materials, exhibiting both positive and negative thermopower. This ability to change the sign of the Seebeck coefficient allows the thermovoltage in carbon-based thermoelectric devices to be boosted by placing CNTs with alternating-sign Seebeck coefficients in tandem.

Synthesis and Characterization of Rare-Earth Tellurides and Their Composites For High-Temperature Thermoelectric Applications

NASA Astrophysics Data System (ADS)

Cheikh, Dean

Radioisotope thermoelectric generators (RTGs) are solid-state energy conversion devices and have been a vital power generation technology for deep space missions conducted by the National Aeronautics and Space Administration (NASA). At the heart of these generators are thermoelectric materials that convert heat given off by a radioisotope decay into electricity through the Seebeck effect. While these systems have demonstrated long-term reliability, the current state-of-practice materials have thermoelectric figures of merit, ZT, near 1, leading to low system level efficiencies of 6.5%. The figure of merit is defined as ZT = sigmaS 2/kappa T where sigma, S, kappa, and T are electrical conductivity, Seebeck coefficient, thermal conductivity, and temperature, respectively. Development of higher ZT materials would enable future NASA missions to perform a greater number of scientific experiments and extend mission lifetimes. Lanthanum telluride (La3-xTe4) is a state-of-the-art n-type high-temperature thermoelectric material, with a ZT of 1.1 at 1275 K. It has been demonstrated that the electrical resistivity and Seebeck coefficient of this material can be decoupled when nickel inclusions are added to form a composite. This new phenomenon, known as composite assisted funneling of electrons (CAFE), allows for the resistivity of the composite to decrease while leaving the Seebeck coefficient unaffected when 12-15 vol% nickel was incorporated. The initial work presented in this dissertation focused on microstructural modifications to La3-xTe4-Ni composites to attain a better understanding of the CAFE mechanism. This investigation was conducted by varying the size of the nickel particles compared to what were used in the previous composite study. A 60% increase in ZT to a value of 1.9 at 1200 K for the composites with the smallest Ni particle size was obtained due to an increased Seebeck coefficient and decreased thermal conductivity. The next study focused on the extension

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

PubMed Central

Han, Mi-Kyung; Lee, Da-Hee; Kim, Sung-Jin

2017-01-01

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping. PMID:29072613

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Kudryashov, A. A.; Kytin, V. G.

2015-06-15

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. Themore » temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.« less

Preparation and Thermoelectric Properties of Cu2Se Hot-Pressed from Hydrothermal Synthesis Nanopowders

NASA Astrophysics Data System (ADS)

Gao, F.; Leng, S. L.; Zhu, Z.; Li, X. J.; Hu, X.; Song, H. Z.

2018-04-01

The nanopowders of Cu2Se were synthesized by the hydrothermal method, and then were hot-pressed into bulk pellets. The effects of different preparation conditions on the structure and thermoelectric properties of Cu2Se nanocrystalline bulk alloys were investigated. The resistivity and Seebeck coefficients increase with the increment of hot-pressing temperatures, while they decrease with the increment of hot-pressing time, except for the Seebeck coefficients of the sample hot-pressed for 30 min. Based on the power factors and dimensionless thermoelectric figure-of-merit ( ZT) values, the optimum hot-pressing parameters are 700°C and 30 min.

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

NASA Astrophysics Data System (ADS)

Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

2018-04-01

The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

Seebeck Changes Due to Residual Cold-Work and Reversible Effects in Type K Bare-Wire Thermocouples

NASA Astrophysics Data System (ADS)

Webster, E. S.

2017-09-01

Type K thermocouples are the most commonly used thermocouple for industrial measurements because of their low cost, wide temperature range, and durability. As with all base-metal thermocouples, Type K is made to match a mathematical temperature-to-emf relationship and not a prescribed alloy formulation. Because different manufacturers use varying alloy formulations and manufacturing techniques, different Type K thermocouples exhibit a range of drift and hysteresis characteristics, largely due to ordering effects in the positive (K+) thermoelement. In this study, these effects are assessed in detail for temperatures below 700°C in the Type K wires from nine manufacturers. A linear gradient furnace and a high-resolution homogeneity scanner combined with the judicious use of annealing processes allow measurements that separately identify the effects of cold-work, ordering, and oxidation to be made. The results show most K+ alloys develop significant errors, but the magnitudes of the contributions of each process vary substantially between the different K+ wires. In practical applications, the measurement uncertainties achievable with Type K therefore depend not only on the wire formulation but also on the temperature, period of exposure, and, most importantly, the thermal treatments prior to use.

Thermoelectric properties, Shubnikov-de Haas effect and mobility of charge carriers in bismuth antimony tellurides and selenides and nanocomposite based on these materials

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Kytin, V. G.; Kudryashov, A. A.; Lunin, R. A.; Banerjee, A.

2017-04-01

We describe here the study of the Shubnikov-de Haas effect and thermoelectric properties of p-(Bi0.5Sb0.5)2Te3 single crystals doped with Ga, n-Bi2-xTlxSe3 and p-Sb2-xTlxTe3. Using Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. We found that Ga has a donor effect in p-(Bi0.5Sb0.5)2Te3, Tl is an acceptor in n-Bi2-xTlxSe3 and increases the mobility of electrons, while in p-Sb2-xTlxTe3, Tl is a donor and decreases the mobility of holes. We consider the evolution of the defectiveness of crystals that leads to the observed effects. We also synthesized and investigated nanocomposites of solid solutions Sb2Te3-xSex (0 < x < 1). When Se concentration increases in Sb2Te3-xSex, the concentration of holes decreases. At the same time the Seebeck coefficient decreases. This is not typical for semiconductors but correlates with the earlier data. A theoretical model was developed to calculate simultaneously the dependences of the Seebeck coefficient, Hall coefficient and conductivity on the selenium concentration x. Calculations showed that for a simultaneous quantitative description of the thermoelectric and galvanomagnetic data it is necessary to take into consideration both the evolution of the band structure of Sb2Te3-xSex and partial localization of holes.

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe2Sn.

PubMed

Buffon, Malinda L C; Laurita, Geneva; Lamontagne, Leo; Levin, Emily E; Mooraj, Shahryar; Lloyd, Demetrious L; White, Natalie; Pollock, Tresa M; Seshadri, Ram

2017-10-11

Heusler compounds XY 2 Z with 24 valence electrons per formula unit are potential thermoelectric materials, given their thermal and chemical stability and their relatively earth-abundant constituent elements. We present results on the 24-electron compound TiFe 2 Sn here. First principles calculations on this compound suggest semiconducting behavior. A relatively flat conduction band that could be associated with a high Seebeck coefficient upon electron doping is found. A series of compounds have been prepared and characterized using a combination of synchrotron x-ray and neutron diffraction studies to understand the effects of site order/disorder phenomena and n-type doping. Samples fabricated by a three step processing approach were subjected to high temperature Seebeck and electrical resistivity measurements. Ti:Fe anti-site disorder is present in the stoichiometric compound and these defects are reduced when starting Ti-rich compositions are employed. Additionally, we investigate control of the Seebeck coefficient through the introduction of carriers through the substitution of Sb on the Sn site in these intrinsically p-type materials.

A note on the electrochemical nature of the thermoelectric power

NASA Astrophysics Data System (ADS)

Apertet, Y.; Ouerdane, H.; Goupil, C.; Lecoeur, Ph.

2016-04-01

While thermoelectric transport theory is well established and widely applied, it is not always clear in the literature whether the Seebeck coefficient, which is a measure of the strength of the mutual interaction between electric charge transport and heat transport, is to be related to the gradient of the system's chemical potential or to the gradient of its electrochemical potential. The present article aims to clarify the thermodynamic definition of the thermoelectric coupling. First, we recall how the Seebeck coefficient is experimentally determined. We then turn to the analysis of the relationship between the thermoelectric power and the relevant potentials in the thermoelectric system: As the definitions of the chemical and electrochemical potentials are clarified, we show that, with a proper consideration of each potential, one may derive the Seebeck coefficient of a non-degenerate semiconductor without the need to introduce a contact potential as seen sometimes in the literature. Furthermore, we demonstrate that the phenomenological expression of the electrical current resulting from thermoelectric effects may be directly obtained from the drift-diffusion equation.

Electrical and thermal transport through low densified copper doped PbSe for thermoelectric application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gayner, Chhatrasal; Malik, Iram; Das, Malay K.

2016-05-06

In this paper, Cu doped PbSe is successfully synthesized by solid state reaction. Theinfluence of porosity on thermal and electrical transport in Cu doped PbSe is investigated in this study. Low densified material significantly scatters the electrons as well as phonons through the high number of scattering sites (like pores, cracks, disorder, etc). As a result, the drastic reduction in thermal conductivity and electrical conductivity isnoticed. Additionally, Seebeck coefficient enhances in a low densified materials. Furthermore, Pb{sub 1-x}Cu{sub x}Se (x ∼ 0 to 0.06) has high Seebeck coefficient due to the energy filtering effect and lower charge carrier concentration.

Azure Avery | NREL

Science.gov Websites

of her dissertation research, Dr. Avery probed thermoelectric effects such as the Seebeck effect and .; Zink, B.L. (2011). "Thermopower and Resistivity in Ferromagnetic Thin Films Near Room Temperature Thermoelectric Effects and Wiedemann-Franz Violation in Magnetic Nanostructures via Micromachined Thermal

Thermal generation of spin current in epitaxial CoFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Er-Jia, E-mail: ejguophysics@gmail.com, E-mail: klaeui@uni-mainz.de; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830; Herklotz, Andreas

2016-01-11

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe{sub 2}O{sub 4} (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect. The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ∼100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effectmore » is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

Effect of on-site Coulomb interaction on electronic and transport properties of 100% spin polarized CoMnVAs

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2017-08-01

The structural, electronic, magnetic and transport properties of a new quaternary Heusler alloy CoMnVAs have been investigated by employing generalized gradient approximation (GGA), modified Becke-Johnson (mBJ) and GGA with Hubbard U correction (GGA + U). The alloy is energetically more stable in ferromagnetic Y1 type structure. Elastic parameters reveal high anisotropy and ductile nature of the material. CoMnVAs shows half-metallic ferromagnet character with 100% spin polarization at Fermi level with band gap of 0.55 eV in the minority spin state. The alloy also possesses high electrical conductivity and Seebeck coefficients with 15 μVK-1 at room temperature, achieving a figure of merit of 0.65 at high temperatures. The high degree of ductility, 100% spin polarization and large Seebeck coefficient, makes it an attractive candidate to be used in spin voltage generators and thermoelectric materials.

Thin film thermocouples for thermoelectric characterization of nanostructured materials

NASA Astrophysics Data System (ADS)

Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

2011-03-01

The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

Ambipolar thermoelectric power of chemically-exfoliated RuO2 nanosheets

NASA Astrophysics Data System (ADS)

Kim, Jeongmin; Yoo, Somi; Moon, Hongjae; Kim, Se Yun; Ko, Dong-Su; Roh, Jong Wook; Lee, Wooyoung

2018-01-01

The electrical conductivity and Seebeck coefficient of RuO2 nanosheets are enhanced by metal nanoparticle doping using Ag-acetate solutions. In this study, RuO2 monolayer and bilayer nanosheets exfoliated from layered alkali metal ruthenates are transferred to Si substrates for device fabrication, and the temperature dependence of their conductivity and Seebeck coefficients is investigated. For pristine RuO2 nanosheets, the sign of the Seebeck coefficient changes with temperature from 350-450 K. This indicates that the dominant type of charge carrier is dependent on the temperature, and the RuO2 nanosheets show ambipolar carrier transport behavior. By contrast, the sign of the Seebeck coefficient for Ag nanoparticle-doped RuO2 nanosheets does not change with temperature, indicating that the extra charge carriers from metal nanoparticles promote n-type semiconductor behavior.

Spin Seebeck Effect and Thermal Colossal Magnetoresistance in Graphene Nanoribbon Heterojunction

PubMed Central

Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

2013-01-01

Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices. PMID:23459307

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

NASA Astrophysics Data System (ADS)

Niu, Pengbin; Liu, Lixiang; Su, Xiaoqiang; Dong, Lijuan; Luo, Hong-Gang

2018-01-01

We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM), which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

Cross-plane electrical and thermal transport in oxide metal/semiconductor superlattices

NASA Astrophysics Data System (ADS)

Jha, Pankaj

Perovskite oxides display a rich variety of electronic properties as metals, ferroelectrics, ferromagnetics, multiferroics, and thermoelectrics. Cross-plane electron filtering transport in metal/semiconductor superlattices provides a potential approach to increase the thermoelectric figure of merit (ZT). La0.67Sr0.33MnO3 (LSMO) and LaMnO3 (LMO) thin-film depositions were optimized using pulsed laser deposition (PLD) to achieve low resistivity constituent materials for LSMO/LMO superlattice heterostructures on (100)-strontium titanate (STO) substrates. X-ray diffraction and high-resolution reciprocal space mapping (RSM) indicate that the superlattices are epitaxial and pseudomorphic. Cross-plane devices were fabricated by etching cylindrical pillar structures in superlattices using inductively-coupled-plasma reactive-ion etching. The cross-plane electrical conductivity data for LSMO/LMO superlattices reveal an effective barrier height of 220 meV. The cross-plane LSMO/LMO superlattices showed a giant Seebeck coefficient of 2560 microV/K at 300K that increases to 16640 microV/K at 360K. The large Seebeck coefficient may arise due to hot electron and spin filtering as LSMO/LMO superlattice constituent materials exhibit spintronic properties where charges and spin current are intertwined and can generate a spin-Seebeck effect. The room temperature thermal conductivity achieved in low resistivity superlattices was 0.92 W/mK, which indicates that cross-plane phonon scattering at interfaces reduces the lattice contribution to the thermal conductivity. The giant contribution of spin-Seebeck, the large temperature dependence of the cross-plane power factor, and the low thermal conductivity in low resistance LSMO/LMO superlattices may offer opportunities to realize spin-magnetic thermoelectric devices, and suggests a direction for further investigations of the potential of LSMO/LMO oxide superlattices for thermoelectric devices.

Spin caloritronics, origin and outlook

NASA Astrophysics Data System (ADS)

Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe

2017-03-01

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated.

Effect of Element Substitution at V site on Thermoelectric Properties of Aurivillius Phase Bi2VO5.5

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2016-10-01

Thermoelectric oxides are suitable at the high temperature range because of chemical stability. Aurivillius compounds are bismuth layered oxides, and known as oxygen ion conductors. The Aurivillius compounds consist of Perovskite layers and Bi-O layers. It is expected that nano-layered structure shows high Seebeck coefficients due to the quantum confinement of carriers in Perovskite layers. It was reported that the Seebeck coefficient of hot pressed specimens for Aurivillius phase Bi2VO5.5 was a high value of -28.3 mVK-1 at 1010 K, and the electrical resistivity of one was also a high value of 0.033 Ωm at 1010 K. In this paper, the effect of element substitution at the V site on thermoelectric properties of Aurivillius phase Bi2VO5.5 was investigated. Bi2V1- x M x O5.5 (M = Cr, Mo, W x = 0, 0.05, 0.1, 0.2) were prepared by solid-state reaction. The electrical resistivity of Cr-substituted specimens were indicated at larger values than the ones for unsubstituted specimens over the measurement temperature range. The resistivity above 800 K was reduced by substitution of W or Mo. W as a substituted element was effective for reducing the thermal conductivity of Bi2VO5.5. The maximum value of the dimensionless figure of merit ZT was 0.05 at 799 K for Bi2V0.8Mo0.2O5.5 and at 902 K for Bi2V0.8W0.1O5.5. The maximum ZT of an unsubstituted sample was 0.02 at 993 K. From these results, it was found that tungsten or molybdenum substitution was effective to improve ZT for Aurivillius phase Bi2VO5.5.

Magnon Valve Effect between Two Magnetic Insulators.

PubMed

Wu, H; Huang, L; Fang, C; Yang, B S; Wan, C H; Yu, G Q; Feng, J F; Wei, H X; Han, X F

2018-03-02

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Magnon Valve Effect between Two Magnetic Insulators

NASA Astrophysics Data System (ADS)

Wu, H.; Huang, L.; Fang, C.; Yang, B. S.; Wan, C. H.; Yu, G. Q.; Feng, J. F.; Wei, H. X.; Han, X. F.

2018-03-01

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

New methodology for the thermal characterization of thermoelectric liquids

NASA Astrophysics Data System (ADS)

Touati, Karim; Depriester, Michael; Kuriakose, Maju; Hadj Sahraoui, Abdelhak

2015-09-01

A new and accurate method for the thermal characterization of thermoelectric liquids is proposed. The experiment is based on a self-generated voltage due to the Seebeck effect. This voltage is provided by the sample when one of its two faces is thermally excited using a modulated laser. The sample used is tetradodecylammonium nitrate salt/1-octanol mixture, with high Seebeck coefficient. The thermal properties of the used sample (thermal diffusivity, effusivity, and conductivity) are found and compared to those obtained by other photothermal techniques. In addition to this, a study of the electrolyte thermal parameters with the variation of tetradodecylammonium nitrate concentration was also carried out. This new method is promising due to its accuracy and its simplicity.

Dirac dispersion generates unusually large Nernst effect in Weyl semimetals

NASA Astrophysics Data System (ADS)

Watzman, Sarah J.; McCormick, Timothy M.; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; Prakash, Arati; Felser, Claudia; Trivedi, Nandini; Heremans, Joseph P.

2018-04-01

Weyl semimetals contain linearly dispersing electronic states, offering interesting features in transport yet to be thoroughly explored thermally. Here we show how the Nernst effect, combining entropy with charge transport, gives a unique signature for the presence of Dirac bands and offers a diagnostic to determine if trivial pockets play a role in this transport. The Nernst thermopower of NbP exceeds its conventional thermopower by a 100-fold, and the temperature dependence of the Nernst effect has a pronounced maximum. The charge-neutrality condition dictates that the Fermi level shifts with increasing temperature toward the energy that has the minimum density of states (DOS). In NbP, the agreement of the Nernst and Seebeck data with a model that assumes this minimum DOS resides at the Dirac points is taken as strong experimental evidence that the trivial (non-Dirac) bands play no role in high-temperature transport.

Modern Thermocouple Experiment.

ERIC Educational Resources Information Center

Chang, K. N.; And Others

1978-01-01

Describes a thermocouple circuit used to measure Joule heating as well as Peltier heating and cooling for a copper-Constantan metallic junction. Shows how the Seebeck effect from a thermocouple can monitor the temperature condition of a junction with regard to input power and Peltier effect. (Author/GA)

Modeling thermoelectric transport in organic materials.

PubMed

Wang, Dong; Shi, Wen; Chen, Jianming; Xi, Jinyang; Shuai, Zhigang

2012-12-28

Thermoelectric energy converters can directly convert heat to electricity using semiconducting materials via the Seebeck effect and electricity to heat via the Peltier effect. Their efficiency depends on the dimensionless thermoelectric figure of merit of the material, which is defined as zT = S(2)σT/κ with S, σ, κ, and T being the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature respectively. Organic materials for thermoelectric applications have attracted great attention. In this review, we present our recent progress made in developing theories and computational schemes to predict the thermoelectric figure of merit at the first-principles level. The methods have been applied to model thermoelectric transport in closely-packed molecular crystals and one-dimensional conducting polymer chains. The physical insight gained in these studies will help in the design of efficient organic thermoelectric materials.

Thermoelectric properties of periodic quantum structures in the Wigner-Rode formalism

NASA Astrophysics Data System (ADS)

Kommini, Adithya; Aksamija, Zlatan

2018-01-01

Improving the thermoelectric Seebeck coefficient, while simultaneously reducing thermal conductivity, is required in order to boost thermoelectric (TE) figure of merit (ZT). A common approach to improve the Seebeck coefficient is electron filtering where ‘cold’ (low energy) electrons are restricted from participating in transport by an energy barrier (Kim and Lundstrom 2011 J. Appl. Phys. 110 034511, Zide et al 2010 J. Appl. Phys. 108 123702). However, the impact of electron tunneling through thin barriers and resonant states on TE properties has been given less attention, despite the widespread use of quantum wells and superlattices (SLs) in TE applications. In our work, we develop a comprehensive transport model using the Wigner-Rode formalism. We include the full electronic bandstructure and all the relevant scattering mechanisms, allowing us to simulate both energy relaxation and quantum effects from periodic potential barriers. We study the impact of barrier shape on TE performance and find that tall, sharp barriers with small period lengths lead to the largest increase in both Seebeck coefficient and conductivity, thus boosting power factor and TE efficiency. Our findings are robust against additional elastic scattering such as atomic-scale roughness at side-walls of SL nanowires.

Interface-Located Photothermoelectric Effect of Organic Thermoelectric Materials in Enabling NIR Detection.

PubMed

Huang, Dazhen; Zou, Ye; Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Di, Chong-an; Xu, Wei; Zhu, Daoben

2015-05-06

Organic photothermoelectric (PTE) materials are promising candidates for various photodetection applications. Herein, we report on poly[Cux(Cu-ett)]:PVDF, which is an excellent polymeric thermoelectric composite, possesses unprecedented PTE properties. The NIR light irradiation on the poly[Cu(x)(Cu-ett)]:PVDF film could induce obvious enhancement in Seebeck coefficient from 52 ± 1.5 to 79 ± 5.0 μV/K. By taking advantage of prominent photothermoelectric effect of poly[Cu(x)(Cu-ett)]:PVDF, an unprecedented voltage of 12 mV was obtained. This excellent performance enables its promising applications in electricity generation from solar energy and NIR detection to a wide range of light intensities ranging from 1.7 mW/cm(2) to 17 W/cm(2).

Thermoelectric properties of (DyNiSn)1-x(DyNiSb)x composite

NASA Astrophysics Data System (ADS)

Synoradzki, Karol; Ciesielski, Kamil; Kępiński, Leszek; Kaczorowski, Dariusz

2018-05-01

High temperature thermoelectric properties of bulk and ball-milled cold-pressed (DyNiSn)1-x(DyNiSb)x composite materials have been studied. For bulk pure DyNiSn and DyNiSb samples the Seebeck coefficient reaches - 5.5 μV/K at 480 K and 120 μV/K at 540 K, respectively. Composite materials show metallic-like electrical resistivity and positive sign of Seebeck coefficient with values up to 50 times higher than in pure DyNiSn compound at 1000 K. Only for the sample with x = 0.47, the ball-milling drives to increase of Seebeck coefficient of about 37% at 650 K.

Thermoelectric Study of Copper Selenide

NASA Astrophysics Data System (ADS)

Yao, Mengliang; Liu, Weishu; Ren, Zhifeng; Opeil, Cyril

2014-03-01

Nanostructuring has been shown to be an effective approach in reducing lattice thermal conductivity and improving the figure of merit of thermoelectric materials. Copper selenide is a layered structure material, which has a low thermal conductivity and p-type Seebeck coefficient at low temperatures. We have evaluated several hot-pressed, nanostructured copper selenide samples with different dopants for their thermoelectric properties. The phenomenon of the charge-density wave observed in the nanocomposite, resistivity, Seebeck, thermal conductivity and carrier mobility will be discussed. Funding for this research was provided by the Solid State Solar - Thermal Energy Conversion Center (S3TEC), an Energy Frontier Research Center sponsored by the DOE, Office of Basic Energy Science, Award No. DE-SC0001299/ DE-FG02-09ER46577.

Effects of K-Doping on Thermoelectric Properties of Bi1- x K x CuOTe

NASA Astrophysics Data System (ADS)

An, Tae-Ho; Lim, Young Soo; Seo, Won-Seon; Park, Cheol-Hee; Yoo, Mi Duk; Park, Chan; Lee, Chang Hoon; Shim, Ji Hoon

2017-05-01

The effects of K-doping on the thermoelectric properties of Bi1- x K x CuOTe ( x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.

Observation of the Spin Nernst Effect in Platinum

NASA Astrophysics Data System (ADS)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Giant Peak Voltage of Thermopower Waves Driven by the Chemical Potential Gradient of Single-Crystalline Bi2 Te3.

PubMed

Singh, Swati; Mun, Hyeona; Lee, Sanghoon; Kim, Sung Wng; Baik, Seunghyun

2017-09-01

The self-propagating exothermic chemical reaction with transient thermovoltage, known as the thermopower wave, has received considerable attention recently. A greater peak voltage and specific power are still demanded, and materials with greater Seebeck coefficients have been previously investigated. However, this study employs an alternative mechanism of transient chemical potential gradient providing an unprecedentedly high peak voltage (maximum: 8 V; average: 2.3 V) and volume-specific power (maximum: 0.11 W mm -3 ; average: 0.04 W mm -3 ) using n-type single-crystalline Bi 2 Te 3 substrates. A mixture of nitrocellulose and sodium azide is used as a fuel, and ultraviolet photoelectron spectroscopy reveals a significant downshift in Fermi energy (≈5.09 eV) of the substrate by p-doping of the fuel. The induced electrical potential by thermopower waves has two distinct sources: the Seebeck effect and the transient chemical potential gradient. Surprisingly, the Seebeck effect contribution is less than 2.5% (≈201 mV) of the maximum peak voltage. The right combination of substrate, fuel doping, and anisotropic substrate geometry results in an order of magnitude greater transient chemical potential gradient (≈5.09 eV) upon rapid removal of fuel by exothermic chemical reaction propagation. The role of fuel doping and chemical potential gradient can be viewed as a key mechanism for enhanced heat to electric conversion performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Exploring Novel Spintronic Responses from Advanced Functional Organic Materials

DTIC Science & Technology

2015-11-12

March 20-22, 2014 (8) Interface enhanced photovoltaic and Seebeck effects in organic solar cells and thermoelectric devices DISTRIBUTION A...on thermoelectric effects by using polymer/metal interface-controllable thermal and electric conductions. The project explored a new strategy by using...following major breakthroughs on molecular metamaterials by using spin radicals and on thermoelectric effects by using polymer/metal interface

Characterization and optimization of polycrystalline Si70%Ge30% for surface micromachined thermopiles in human body applications

NASA Astrophysics Data System (ADS)

Wang, Ziyang; Fiorini, Paolo; Leonov, Vladimir; Van Hoof, Chris

2009-09-01

This paper presents the material characterization methods, characterization results and the optimization scheme for polycrystalline Si70%Ge30% (poly-SiGe) from the perspective of its application in a surface micromachined thermopile. Due to its comparative advantages, such as lower thermal conductivity and ease of processing, over other materials, poly-SiGe is chosen to fabricate a surface micromachined thermopile and eventually a wearable thermoelectric generator (TEG) to be used on a human body. To enable optimal design of advanced thermocouple microstructures, poly-SiGe sample materials prepared by two different techniques, namely low-pressure chemical vapor deposition (LPCVD) with in situ doping and rapid thermal chemical vapor deposition (RTCVD) with ion implantation, have been characterized. Relevant material properties, including electrical resistivity, Seebeck coefficient, thermal conductivity and specific contact resistance, have been reported. For the determination of thermal conductivity, a novel surface-micromachined test structure based on the Seebeck effect is designed, fabricated and measured. Compared to the traditional test structures, it is more advantageous for sample materials with a relatively large Seebeck coefficient, such as poly-SiGe. Based on the characterization results, a further optimization scheme is suggested to allow independent respective optimization of the figure of merit and the specific contact resistance.

The Technologies and Principles Needed for the Powering of Remote Nodes in an Interoperability Network

DTIC Science & Technology

2009-03-01

utilizing a radioisotope, polonium - 210 , the advent of a practical use TEG launched the development and array of applications for such devices. Rapidly...47 1. Seebeck Effect ...............................47 2. Principles of Operation ......................48...UltraCell XX25 Fuel Cell (From UltraCell Corporation)....................................59 Figure 13. Effect of CO on PEMFC (From Baschuk and Li 2001

Lifshitz transition and thermoelectric properties of bilayer graphene

NASA Astrophysics Data System (ADS)

Suszalski, Dominik; Rut, Grzegorz; Rycerz, Adam

2018-03-01

This is a numerical study of thermoelectric properties of ballistic bilayer graphene in the presence of a trigonal warping term in the effective Hamiltonian. We find, in the mesoscopic samples of the length L >10 μ m at sub-Kelvin temperatures, that both the Seebeck coefficient and the Lorentz number show anomalies (the additional maximum and minimum, respectively) when the electrochemical potential is close to the Lifshitz energy, which can be attributed to the presence of the van Hove singularity in a bulk density of states. At higher temperatures the anomalies vanish, but measurable quantities characterizing the remaining maximum of the Seebeck coefficient still unveil the presence of massless Dirac fermions and make it possible to determine the trigonal warping strength. Behavior of the thermoelectric figure of merit (Z T ) is also discussed.

Electronic and Transport Properties of LaNi4Sb12 Skutterudite: Modified Becke-Johnson Approach

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Singh, Srishti; Gupta, Dinesh C.

2018-05-01

We carried out an ab initio study of structural, electronic, thermodynamic, and thermoelectric properties of the lanthanum-filled skutterudite, LaNi4Sb12. Generalized gradient approximation and modified Becke-Johnson potentials were employed for the exchange-correlation potential. The electronic structure calculations display the metallic behavior of the compound. The alloy offers low lattice thermal conductivity along with a high Seebeck coefficient with a value of - 158 (μVK-1) at room temperature. The effect of high pressure and temperature on thermal properties like thermal expansion coefficient, heat capacity, and Grüneisen parameter are also investigated by means of a quasi-harmonic Debye model. The large Seebeck coefficient and high power factor exhibited by LaNi4Sb12 make it an attractive candidate for thermoelectric materials.

The impact of sintering temperature on structural, morphological and thermoelectric properties of zinc titanate nanocrystals

NASA Astrophysics Data System (ADS)

Chandrasekaran, P.; Murugu thiruvalluvan, T. M. V.; Arivanandhan, M.; Jayakumari, T.; Anandan, P.

2017-07-01

The effect of sintering temperature and Ti:Zn ratio of precursor solutions on the structural, morphological and thermoelectric properties of Zinc titanate (TZO) nanocrystals have been investigated. TZO nanocrystals were synthesized by changing the molar ratio of precursors of Zn and Ti sources by sol-gel method. The synthesized materials were sintered at different temperatures and the formation of multi phases of TZO were analysed by x-ray diffraction studies. The morphological properties and composition of TZO samples were studied by FESEM, TEM and XPS analysis. The thermoelectric properties of the TZO have been studied by measuring the Seebeck coefficient of the materials at various temperature. It was observed that the Seebeck coefficient of TZO sample increases with increasing Zn content in the sample especially at high temperature.

Thermoelectric metal comparator determines composition of alloys and metals

NASA Technical Reports Server (NTRS)

Stone, C. C.; Walker, D. E.

1967-01-01

Emf comparing device nondestructively inspects metals and alloys for conformance to a chemical specification. It uses the Seebeck effect to measure the difference in emf produced by the junction of a hot probe and the junction of a cold contact on the surface of an unknown metal.

Variations of thermoelectric performance by electric fields in bilayer MX2 (M = W, Mo; X = S, Se).

PubMed

Wang, Rui-Ning; Dong, Guo-Yi; Wang, Shu-Fang; Fu, Guang-Sheng; Wang, Jiang-Long

2017-02-22

A gate electrode is usually used to controllably tune the carrier concentrations, further modulating the electrical conductivity and the Seebeck coefficient to obtain the optimum thermoelectric figure of merit (ZT) in two-dimensional materials. On the other hand, it is necessary to investigate how an electric field induced by a gate voltage affects the electronic structures, further determining the thermoelectric properties. Therefore, by using density functional calculations in combination with Boltzmann theory, the thermoelectric properties of bilayer MX 2 (M = W, Mo; X = S, Se) with or without a 1 V nm -1 perpendicular electric field are comparatively investigated. First of all, the variations of the electrical conductivity (σ), electron thermal conductivity and Seebeck coefficient (S) with the carrier concentration are studied. Due to the trade-off relationship between S and σ, there is an optimum concentration to obtain the maximum ZT, which increases with the temperature due to the enhancement of the Seebeck coefficient. Moreover, N-type bilayers have larger optimum ZTs than P-type bilayers. In addition, the electric field results in the increase of the Seebeck coefficient in low hole-doped MS 2 bilayers and high hole-doped MSe 2 bilayers, thus leading to similar variations in ZT. The optimum ZTs are reduced from 2.11 × 10 -2 , 3.19 × 10 -2 , 2.47 × 10 -2 , and 2.58 × 10 -2 to 1.57 × 10 -2 , 1.51 × 10 -2 , 2.08 × 10 -2 , and 1.43 × 10 -2 for the hole-doped MoS 2 , MoSe 2 , and WSe 2 bilayers, respectively. For N-type bilayers, the electric field shows a destructive effect, resulting in the obvious reduction of the Seebeck coefficient in the MSe 2 layers and the low electron-doped MS 2 bilayers. In electron-doped bilayers, the optimum ZTs will decrease from 3.03 × 10 -2 , 6.64 × 10 -2 , and 6.69 × 10 -2 to 2.81 × 10 -2 , 3.59 × 10 -2 , and 4.39 × 10 -2 for the MoS 2 , MoSe 2 , and WSe 2 bilayers, respectively.

Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots

PubMed Central

2012-01-01

We have theoretically studied the thermoelectric properties of serially coupled quantum dots (SCQDs) embedded in an insulator connected to metallic electrodes. In the framework of Keldysh Green’s function technique, the Landauer formula of transmission factor is obtained using the equation of motion method. Based on such analytical expressions of charge and heat currents, we calculate the electrical conductance, Seebeck coefficient, electron thermal conductance, and figure of merit (ZT) of SCQDs in the linear response regime. The effects of interdot hopping and electron Coulomb interactions on ZT are analyzed. We demonstrate that ZT is not a monotonic increasing function of interdot electron hopping strength (tc). We also show that in the absence of phonon thermal conductance, SCQD can reach the Carnot efficiency as tcapproaches zero. PMID:22591807

Thermoelectric properties of non-stoichiometric lanthanum sulfides

NASA Technical Reports Server (NTRS)

Shapiro, E.; Danielson, L. R.

1983-01-01

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 C. The non-stoichiometric lanthanum sulfides (LaS(x), where x is in the range 1.33-1.50) appear to possess the most favorable thermoelectric properties. The Seebeck coefficient and resistivity vary significantly with composition, so that an optimum value of alpha sq/rho (where alpha is the Seebeck coefficient and rho is the resistivity) can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of alpha sq/rho should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides will be pressed, together with structural properties of these materials.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique

NASA Astrophysics Data System (ADS)

Hosokawa, Yuichi; Wada, Kodai; Tanaka, Masaki; Tomita, Koji; Takashiri, Masayuki

2018-02-01

High-purity hexagonal bismuth telluride (Bi2Te3) nanoplates were prepared by a solvothermal synthesis method, followed by the fabrication of nanoplate thin films by the drop-casting technique. The Bi2Te3 nanoplates exhibited a single-crystalline phase with a rhombohedral crystal structure. The nanoplates had a flat surface with edge sizes ranging from 500 to 2000 nm (average size of 1000 nm) and a thickness of less than 50 nm. The resulting Bi2Te3 nanoplate thin films were composed of well-aligned hexagonal nanoplates along the surface direction with an approximate film thickness of 40 µm. To tightly connect the nanoplates together within the thin films, thermal annealing was performed at different temperatures. We found that the thermoelectric properties, especially the Seebeck coefficient, were very sensitive to the annealing temperature. Finally, the optimum annealing temperature was determined to be 250 °C and the Seebeck coefficient and power factor were -300 µV/K and 3.5 µW/(cm·K2), respectively.

Thermoelectric transport properties of high mobility organic semiconductors

NASA Astrophysics Data System (ADS)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

Key to enhance thermoelectric performance by controlling crystal size of strontium titanate

NASA Astrophysics Data System (ADS)

Wang, Jun; Ye, Xinxin; Yaer, Xinba; Wu, Yin; Zhang, Boyu; Miao, Lei

2015-09-01

One-step molten salt synthesis process was introduced to fabricate nano to micrometer sized SrTiO3 powders in which effects of synthesis temperature, oxide-to-flux ratios and raw materials on the generation of SrTiO3 powders were examined. 100 nm or above sized pure SrTiO3 particles were obtained at relatively lower temperature of 900∘C. Micro-sized rhombohedral crystals with a maximum size of approximately 12 μm were obtained from SrCO3 or Sr(NO3)2 strontium source with 1:1 O/S ratio. Controlled crystal size and morphology of Nb-doped SrTiO3 particles are prepared by using this method to confirm the performance of thermoelectric properties. The Seebeck coefficient obtained is significantly high when compared with the reported data, and the high ratio of nano particles in the sample has a positive effect on the increase of Seebeck coefficient too, which is likely due to the energy filtering effect at large numbers of grain boundaries resulting from largely distributed structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emin, David, E-mail: emin@unm.edu

Charge carriers that execute multi-phonon hopping generally interact strongly enough with phonons to form polarons. A polaron's sluggish motion is linked to slowly shifting atomic displacements that severely reduce the intrinsic width of its transport band. Here a means to estimate hopping polarons' bandwidths from Seebeck-coefficient measurements is described. The magnitudes of semiconductors' Seebeck coefficients are usually quite large (>k/|q| = 86 μV/K) near room temperature. However, in accord with the third law of thermodynamics, Seebeck coefficients must vanish at absolute zero. Here, the transition of the Seebeck coefficient of hopping polarons to its low-temperature regime is investigated. The temperature and sharpness ofmore » this transition depend on the concentration of carriers and on the width of their transport band. This feature provides a means of estimating the width of a polaron's transport band. Since the intrinsic broadening of polaron bands is very small, less than the characteristic phonon energy, the net widths of polaron transport bands in disordered semiconductors approach the energetic disorder experienced by their hopping carriers, their disorder energy.« less

Uncertainty Analysis of Seebeck Coefficient and Electrical Resistivity Characterization

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

In order to provide a complete description of a materials thermoelectric power factor, in addition to the measured nominal value, an uncertainty interval is required. The uncertainty may contain sources of measurement error including systematic bias error and precision error of a statistical nature. The work focuses specifically on the popular ZEM-3 (Ulvac Technologies) measurement system, but the methods apply to any measurement system. The analysis accounts for sources of systematic error including sample preparation tolerance, measurement probe placement, thermocouple cold-finger effect, and measurement parameters; in addition to including uncertainty of a statistical nature. Complete uncertainty analysis of a measurement system allows for more reliable comparison of measurement data between laboratories.

Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron

NASA Astrophysics Data System (ADS)

Huang, Hai; Zheng, Anmin; Gao, Guoying; Yao, Kailun

2018-03-01

Ab initio calculations based on density functional theory and non-equilibrium Green's function are performed to investigate the thermal spin transport properties of single-hydrogen-saturated zigzag graphene nanoribbon co-doped with non-metallic Nitrogen and Boron in parallel and anti-parallel spin configurations. The results show that the doped graphene nanoribbon is a full half-metal. The two-probe system based on the doped graphene nanoribbon exhibits various excellent spin transport properties, including the spin-filtering effect, the spin Seebeck effect, the single-spin negative differential thermal resistance effect and the sign-reversible giant magnetoresistance feature. Excellently, the spin-filtering efficiency can reach nearly 100% in the parallel configuration and the magnetoresistance ratio can be up to -1.5 × 1010% by modulating the electrode temperature and temperature gradient. Our findings indicate that the metal-free doped graphene nanoribbon would be a promising candidate for spin caloritronic applications.

Thermoelectric Behavior of PbSe Single Crystals

DOE PAGES

Kogo, Gilbert; Pradhan, Aswini K.; Roy, Utpal N.

2016-12-05

The electrical conductivity and Seebeck coefficient of PbSe single crystals grown by the Bridgman technique display metallic behavior. The Seebeck coefficient increases linearly with increasing temperature and showed positive Seebeck values, typically valid for a p-type PbSe crystal. The electronic thermal conductivity decreases with increase in temperature. The power factor increases gradually with temperature until the maximum value of 6.51 × 10 -3 W/mK2 at 260 K, other values are 5.95 × 10 -3 W/mK 2 at 300 K, and 5.40 × 10 -3 W/mK 2 at 320 K. Our results demonstrate that as-grown PbSe crystal is generically p-type duemore » to excess in Pb and can be a potential candidate for thermoelectric power generation.« less

Electron and thermal transport via variable range hopping in MoSe2 single crystals

NASA Astrophysics Data System (ADS)

Suri, Dhavala; Patel, R. S.

2017-06-01

Bulk single crystal molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at ≃31 K. In the semiconducting phase (T > 31 K), the transport is best explained by the variable range hopping (VRH) model. Large magnitude of resistivity in the CPP mode indicates strong structural anisotropy. The Seebeck coefficient as a function of temperature measured in the range of 90-300 K also agrees well with the VRH model. The room temperature Seebeck coefficient is found to be 139 μV/K. VRH fittings of the resistivity and the Seebeck coefficient data indicate high degree of localization.

Nonreciprocity of electrically excited thermal spin signals in CoFeAl-Cu-Py lateral spin valves

NASA Astrophysics Data System (ADS)

Hu, Shaojie; Cui, Xiaomin; Nomura, Tatsuya; Min, Tai; Kimura, Takashi

2017-03-01

Electrical and thermal spin currents excited by an electric current have been systematically investigated in lateral spin valves consisting of CoFeAl and Ni80Fe20 (Py) wires bridged by a Cu strip. In the electrical spin signal, the reciprocity between the current and voltage probes was clearly confirmed. However, a significant nonreciprocity was observed in the thermal spin signal. This provides clear evidence that a large spin-dependent Seebeck coefficient is more important than the spin polarization for efficient thermal spin injection and detection. We demonstrate that the spin-dependent Seebeck coefficient can be simply evaluated from the thermal spin signals for two configurations. Our experimental description paves a way for evaluating a small spin-dependent Seebeck coefficient for conventional ferromagnets without using complicated parameters.

Exact Thermal Transport Properties of Gray-Arsenic using Electon-Phonon Coupling

NASA Astrophysics Data System (ADS)

Kang, Seoung-Hun; Kwon, Young-Kyun

Using various theoretical methods, we investigate the thermoelectric property of gray arsenic. Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy. The conversion efficiency of such a device is determined by its figure of merit or ZT value, which is related to various transport coefficients, such as Seebeck coefficient and the ratio of its electrical conductivity to its thermal counterpart for given temperature. To calculate various transport coefficients and thus the ZT values of gray arsenic, we apply the Boltzmann transport theory to its electronic and phononic structures obtained by density functional theory and density functional perturbation theory together with maximally locallized Wannier functions. During this procedure, we evaluate its relaxation time accurately by explicitly considering electron-phonon coupling. Our result reveals that gray arsenic may be used for a good p-type thermoelectric devices.

Photothermoelectric and photovoltaic effects both present in MoS2

PubMed Central

Zhang, Youwei; Li, Hui; Wang, Lu; Wang, Haomin; Xie, Xiaomin; Zhang, Shi-Li; Liu, Ran; Qiu, Zhi-Jun

2015-01-01

As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS2) has recently attracted extensive interest for energy and sensor applications. In particular for broad-spectral photodetectors, multilayer MoS2 is more appealing than its monolayer counterpart. However, little is understood regarding the physics underlying the photoresponse of multilayer MoS2. Here, we employ scanning photocurrent microscopy to identify the nature of photocurrent generated in multilayer MoS2 transistors. The generation and transport of photocurrent in multilayer MoS2 are found to differ from those in other low-dimensional materials that only contribute with either photovoltaic effect (PVE) or photothermoelectric effect (PTE). In multilayer MoS2, the PVE at the MoS2-metal interface dominates in the accumulation regime whereas the hot-carrier-assisted PTE prevails in the depletion regime. Besides, the anomalously large Seebeck coefficient observed in multilayer MoS2, which has also been reported by others, is caused by hot photo-excited carriers that are not in thermal equilibrium with the MoS2 lattice. PMID:25605348

Effective mass and Fermi surface complexity factor from ab initio band structure calculations

NASA Astrophysics Data System (ADS)

Gibbs, Zachary M.; Ricci, Francesco; Li, Guodong; Zhu, Hong; Persson, Kristin; Ceder, Gerbrand; Hautier, Geoffroy; Jain, Anubhav; Snyder, G. Jeffrey

2017-02-01

The effective mass is a convenient descriptor of the electronic band structure used to characterize the density of states and electron transport based on a free electron model. While effective mass is an excellent first-order descriptor in real systems, the exact value can have several definitions, each of which describe a different aspect of electron transport. Here we use Boltzmann transport calculations applied to ab initio band structures to extract a density-of-states effective mass from the Seebeck Coefficient and an inertial mass from the electrical conductivity to characterize the band structure irrespective of the exact scattering mechanism. We identify a Fermi Surface Complexity Factor: Nv*K* from the ratio of these two masses, which in simple cases depends on the number of Fermi surface pockets (Nv* ) and their anisotropy K*, both of which are beneficial to high thermoelectric performance as exemplified by the high values found in PbTe. The Fermi Surface Complexity factor can be used in high-throughput search of promising thermoelectric materials.

Effects of Mn Substitution on the Thermoelectric Properties and Thermal Excitations of the Electron-doped Perovskite Sr1-xLaxTiO3

NASA Astrophysics Data System (ADS)

Okuda, Tetsuji; Hata, Hiroto; Eto, Takahiro; Sobaru, Shogo; Oda, Ryosuke; Kaji, Hiroki; Nishina, Kousuke; Kuwahara, Hideki; Nakamura, Mitsutaka; Kajimoto, Ryoichi

2016-09-01

We studied how Mn substitution affects the thermoelectric properties and thermal excitations of the electron-doped perovskite Sr1-xLaxTiO3 by measuring its electrical and thermal transport properties, magnetization, specific heat, and inelastic neutron scattering. Slight Mn substitution with the lattice defects enhanced the Seebeck coefficient, perhaps because of coupling between itinerant electrons and localized spins or between itinerant electrons and local lattice distortion around Mn3+ ions, while it enhanced anharmonic lattice vibrations, which effectively suppressed thermal conductivity in a state of high electrical conductivity. Consequently, slight Mn substitution increased the dimensionless thermoelectric figure of merit for Sr1-xLaxTiO3 near room temperature.

Electronic and Thermoelectric Properties of Ternary Chalcohalide Semiconductors: First Principles Study

NASA Astrophysics Data System (ADS)

Khan, Wilayat; Hussain, Sajjad; Minar, Jan; Azam, Sikander

2018-02-01

Ternary chalcohalides have been widely utilized for different device applications. The thermoelectric properties of SbSI, SbSeI and SbSBr have been investigated by theoretical simulations, and the findings have been performed using BoltzTraP code, based on semi-classical Boltzmann transport theory. In this study, we simulated the electronic structures using the Englo-Vosko generalized gradient approximation employed in the WIEN2k program. From the electronic band structures, we found a combination of light and heavy bands around the Fermi level in the valence band, which strongly affect the effective masses of the carriers. The entire thermoelectric parameters, like the electrical, the electronic part of the thermal conductivities, the Seebeck coefficient and the power factor have been analysed as functions of temperature and chemical potential. The correlation between the effective masses and the thermoelectric properties is also included in the discussion because the effective mass reveals the mobility of the carriers which in turn affect the thermoelectric properties. The substitution of sulfur reveals high electrical conductivity and a smaller Seebeck coefficient based on effective mass leads to the increase in the power factor.

Effects of Mn substitution on the thermoelectric properties of the electron-doped perovskite Sr1-xLaxTiO3

NASA Astrophysics Data System (ADS)

Okuda, T.; Hata, H.; Eto, T.; Nishina, K.; Kuwahara, H.; Nakamura, M.; Kajimoto, R.

2014-12-01

We have tried to improve the n-type thermoelectric properties of the electron- doped Perovskite Sr1-xLaxTiO3 by a Mn substitution. The 1 ~ 2 % Mn substitution enhances the Seebeck coefficient (S) and reduces the thermal conductivity (κ) by about 50 % at room temperature (RT) without largely increasing the resistivity for the 5 % electron-doped SrTiO3. Consequently, the power factor at RT keeps a large value comparable to that of Bi2Te3 and the dimensionless figure-of-merits at RT increases twofold by the slight Mn substitution. Such a large reduction of κ at RT is perhaps due to the effect of Jahn-Teller active Mn3+ ions, around which dynamical local lattice distortion may occur.

High thermoelectric figure of merit by resonant dopant in half-Heusler alloys

NASA Astrophysics Data System (ADS)

Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

2017-06-01

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.

Transverse thermoelectric effect in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}|SrRuO{sub 3} superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiomi, Y.; Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Aoba-ku, Sendai 980-8577; Handa, Y.

2015-06-08

Transverse thermoelectric effects in response to an out-of-plane heat current have been studied in an external magnetic field for ferromagnetic superlattices consisting of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} and SrRuO{sub 3} layers. The superlattices were fabricated on SrTiO{sub 3} substrates by pulsed laser deposition. We found that the sign of the transverse thermoelectric voltage for the superlattices is opposite to that for La{sub 0.67}Sr{sub 0.33}MnO{sub 3} and SrRuO{sub 3} single layers at 200 K, implying an important role of spin Seebeck effects inside the superlattices. At 10 K, the magnetothermoelectric curves shift from the zero field due to an antiferromagnetic coupling between layersmore » in the superlattices.« less

Thermoelectric properties of p-type perovskite compounds LaCoO3 systems containing the A-site vacancy

NASA Astrophysics Data System (ADS)

Anzai, Mayuka; Kawakami, Hiroshi; Saito, Miwa; Yamamura, Hiroshi

2011-05-01

Thermoelectric properties of Sr-doped LaCoO3 system which includes both La1-xSrxCoO3 and La0.95-xSrxsquare0.05CoO3 containing the A-site vacancy were prepared by solid state reaction. The crystal phases of the samples were investigated by X-ray diffraction method. The electrical conductivity, Seebeck coefficient, and thermal conductivity were investigated, focusing the effect of A-site vacancy. Doping of Sr to LaCoO3 improved the electrical conductivity but decreased the seebeck coefficient and increased the thermal conductivity. A-site vacancy of La0.95-xSrxsquare0.05CoO3 system, in comparison with La1-xSrxCoO3 system, increased electrical conductivity, and decreased lattice thermal conductivity. As a result, it was found that the thermoelectric properties of La0.95-xSrxsquare0.05CoO3 containing the A-site vacancy showed the higher values than those of La1-xSrxCoO3. The introduction of A-site vacancy was effective on the improvement of thermoelectric property.

Hydrodynamic interactions in DNA thermophoresis.

PubMed

Ly, Aboubakry; Würger, Alois

2018-01-31

We theoretically study the molecular-weight dependence of DNA thermophoresis, which arises from mutual advection of the n repeat units of the molecular chain. As a main result we find that the dominant driving forces, i.e., the thermally induced permittivity gradient and the electrolyte Seebeck effect, result in characteristic hydrodynamic screening. In comparison with recent experimental data on single-stranded DNA (2 ≤ n ≤ 80), our theory provides a good description for the increase of the drift velocity up to n = 30; the slowing-down of longer molecules is well accounted for by a simple model for counterion condensation. It turns out that thermophoresis may change sign as a function of n: for an appropriate choice of the salt-specific Seebeck coefficient, short molecules move to the cold and long ones to the hot; this could be used for separating DNA by molecular weight.

Chemical Potential Evaluation of Thermoelectric and Mechanical Properties of Zr2CoZ (Z = Si, Ge) Heusler Alloys

NASA Astrophysics Data System (ADS)

Yousuf, Saleem; Gupta, Dinesh C.

2018-04-01

The electronic, mechanical and thermoelectric properties of Zr2CoZ (Z = Si, Ge) Heusler alloys are investigated by the full-potential linearized augmented plane wave method. Using the Voigt-Reuss approximation, we calculated the various elastic constants, the shear and Young's moduli, and Poisson's ratio which predict the ductile nature of the alloys. Thermoelectric coefficients viz., Seebeck, electrical conductivity and figure of merit show Zr2CoZ alloys as n-type thermoelectric materials showing a linearly increasing Seebeck coefficient with temperature mainly because of the existence of almost flat conduction bands along L to D directions of a high symmetry Brillouin zone. The efficiency of conversion was measured as the figure of merit by taking into effect the lattice thermal part that achieves an upper-limit of 0.14 at 1200 K which may favour their use for waste heat recovery at higher temperatures.

Codoping in SnTe: Enhancement of Thermoelectric Performance through Synergy of Resonance Levels and Band Convergence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Gangjian; Shi, Fengyuan; Hao, Shiqiang

2015-04-22

We report a significant enhancement of the thermoelectric performance of p-type SnTe over a broad temperature plateau with a peak ZT value of similar to 1.4 at 923 K through In/Cd codoping and a CdS nanostructuring approach. Indium and cadmium play different but complementary roles in modifying the valence band structure of SnTe. Specifically, In-doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebeck coefficient at low temperature. Cd-doping, however, increases the Seebeck coefficient of SnTe remarkably in the mid- to high-temperature region via a convergence of the light and heavy hole bands and an enlargementmore » of the band gap. Combining the two dopants in SnTe yields enhanced Seebeck coefficient and power factor over a wide temperature range due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisarenko plot and supported by first-principles band structure calculations. Moreover, these codoped samples can be hierarchically structured on all scales (atomic point defects by doping, nanoscale precipitations by CdS nanostructuring, and mesoscale grains by SPS treatment) to achieve highly effective phonon scattering leading to strongly reduced thermal conductivities. In addition to the high maximum ZT the resultant large average ZT of similar to 0.8 between 300 and 923 K makes SnTe an attractive p-type material for high-temperature thermoelectric power generation.« less

Large anomalous Nernst effect at room temperature in a chiral antiferromagnet

NASA Astrophysics Data System (ADS)

Ikhlas, Muhammad; Tomita, Takahiro; Koretsune, Takashi; Suzuki, Michi-To; Nishio-Hamane, Daisuke; Arita, Ryotaro; Otani, Yoshichika; Nakatsuji, Satoru

2017-11-01

A temperature gradient in a ferromagnetic conductor can generate a transverse voltage drop perpendicular to both the magnetization and heat current. This anomalous Nernst effect has been considered to be proportional to the magnetization, and thus observed only in ferromagnets. Theoretically, however, the anomalous Nernst effect provides a measure of the Berry curvature at the Fermi energy, and so may be seen in magnets with no net magnetization. Here, we report the observation of a large anomalous Nernst effect in the chiral antiferromagnet Mn 3Sn (ref. ). Despite a very small magnetization ~0.002 μB per Mn, the transverse Seebeck coefficient at zero magnetic field is ~0.35 μV K-1 at room temperature and reaches ~0.6 μV K-1 at 200 K, which is comparable to the maximum value known for a ferromagnetic metal. Our first-principles calculations reveal that this arises from a significantly enhanced Berry curvature associated with Weyl points near the Fermi energy. As this effect is geometrically convenient for thermoelectric power generation--it enables a lateral configuration of modules to cover a heat source--these observations suggest that a new class of thermoelectric materials could be developed that exploit topological magnets to fabricate efficient, densely integrated thermopiles.

Doping effect on the thermoelectric properties of chalcopyrite CuGaTe2

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Singh, Birender; Kumar, Pradeep

2018-05-01

In the present work, we have investigated the thermoelectric properties of CuGaTe2 by combining the first principle calculations with Boltzmann transport theory. CuGaTe2 is found to be a potential thermoelectric material with Seebeck coefficient 275µVK-1 at 200K. The thermoelectric properties of the compound can be further improved by doping it with p as well as n-type charge carriers. The heavily p-doped and lightly n-doped, CuGaTe2 provides power factor comparable to that of state-of-art Bi2Te3.

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Sarath Kumar, S. R.; Abutaha, A. I.; Hedhili, M. N.; Alshareef, H. N.

2012-12-01

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300-1000 K) thermoelectric properties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300-2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

NASA Astrophysics Data System (ADS)

Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

2011-12-01

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

Improved microstructure and thermoelectric properties of iodine doped indium selenide as a function of sintering temperature

NASA Astrophysics Data System (ADS)

Dhama, Pallavi; Kumar, Aparabal; Banerji, P.

2018-04-01

In this paper, we explored the effect of sintering temperature on the microstructure, thermal and electrical properties of iodine doped indium selenide in the temperature range 300 - 700 K. Samples were prepared by a collaborative process of vacuum melting, ball milling and spark plasma sintering at 570 K, 630 K and 690 K. Single phase samples were obtained at higher sintering temperature as InSe is stable only at lower temperature. With increasing sintering temperature, densities of the samples were found to improve with larger grain size formation. Negative values of Seebeck coefficient were observed which indicates n-type carrier transport. Seebeck coefficient increases with sintering temperature and found to be the highest for the sample sintered at 690 K. Thermal conductivity found to be lower in the samples sintered at lower temperatures. The maximum thermoelectric figure of merit found to be ˜ 1 at 700 K due to the enhanced power factor as a result of improved microstructure.

First-principles simulation on thermoelectric propertiesof transition metal dichalcogenide monolayers

NASA Astrophysics Data System (ADS)

Nakamura, Koichi

2018-06-01

Thermoelectric properties of transition metal dichalcogenide (TMDC) monolayer models, such as Seebeck coefficient and lattice heat capacity, were simulated on the basis of first-principles calculations. The calculated Seebeck coefficients are appropriate for the thermoelectric element of all the TMDC monolayer models introduced in this study. In the MoX2/WX2 (X = S, Se, and Te) heterojunction structure, carrier electrons and holes are respectively distributed in the MoX2 and WX2 regions by adopting a common Fermi energy for both electronic structures. In particular, in the X = Te case, the practical carrier concentration with a large Seebeck coefficient can be evaluated without doping. The lattice heat capacities and their temperature dependence tendencies can be classified on the basis of the minimum frequencies of the optical modes. The quotient of the lattice thermal conductivity over the phonon relaxation time gives the temperature-independent specific values according to the kind of TMDC monolayer.

Heat-driven spin torques in antiferromagnets

NASA Astrophysics Data System (ADS)

Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe

2018-04-01

Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.

Effect of substrate on the atomic structure and physical properties of thermoelectric Ca₃Co₄O₉ thin films.

PubMed

Qiao, Q; Gulec, A; Paulauskas, T; Kolesnik, S; Dabrowski, B; Ozdemir, M; Boyraz, C; Mazumdar, D; Gupta, A; Klie, R F

2011-08-03

The incommensurately layered cobalt oxide Ca(3)Co(4)O(9) exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca(3)Co(4)O(9) thin films grown on cubic perovskite SrTiO(3), LaAlO(3), and (La(0.3)Sr(0.7))(Al(0.65)Ta(0.35))O(3) substrates and on hexagonal Al(2)O(3) (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO(2) layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca(2)CoO(3) buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO(2) stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca(3)Co(4)O(9) films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

Quantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient

NASA Astrophysics Data System (ADS)

Reimer, Oliver; Meier, Daniel; Bovender, Michel; Helmich, Lars; Dreessen, Jan-Oliver; Krieft, Jan; Shestakov, Anatoly S.; Back, Christian H.; Schmalhorst, Jan-Michael; Hütten, Andreas; Reiss, Günter; Kuschel, Timo

2017-01-01

A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investigated in terms of in-plane thermal gradients inducing perpendicular spin currents (transverse SSE) and out-of-plane thermal gradients generating parallel spin currents (longitudinal SSE). Up to now all spincaloric experiments employ a spatially fixed thermal gradient. Thus, anisotropic measurements with respect to well defined crystallographic directions were not possible. Here we introduce a new experiment that allows not only the in-plane rotation of the external magnetic field, but also the rotation of an in-plane thermal gradient controlled by optical temperature detection. As a consequence, the anisotropic magnetothermopower and the planar Nernst effect in a permalloy thin film can be measured simultaneously. Thus, the angular dependence of the magnetothermopower with respect to the magnetization direction reveals a phase shift, that allows the quantitative separation of the thermopower, the anisotropic magnetothermopower and the planar Nernst effect.

Enhanced thermoelectric response in the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

2018-02-01

We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

Study on temperature and damage sensing capability of Portland cement paste through the thermoelectric measurements

NASA Astrophysics Data System (ADS)

Hou, Tsung-Chin; Tai, Ko-Hung; Su, Yu-Min

2017-04-01

This study attempted to investigate the self-sensing capability of Portland cement composites in sensing temperature and detecting damages through the measurements of materials' thermoelectric properties. Specimens were made of Ordinary Portland Cement (OPC) with the water to cement ratio of 0.4. Temperature sensing property was characterized at various ages of the specimens from 28 to 49 days and at dried/moisturized conditions. It was found there exists an approximately linear relationship between temperature differences (ΔT) and the measured thermoelectric potentials, which is known as the Seebeck effect. This linearity was observed to be varied but able to be characterized for cement pastes at different ages and water saturation conditions. Mechanical loading that introduced different types and degrees of damages also translated into the variations of thermoelectric properties. Specifically, different types of compressive loads were tested for comparison. The study results have shown that Seebeck coefficient dropped with introduced damages, and restored with the subsequent re-curing as well as the continued cement hydration. Mild and moderate damages can be partially or fully restored, while severe damages that have resulted in significant drop of the Seebeck coefficients would restrain the self-restoration. Determination of the damage threshold was not yet revealed in this study, while it was shown obviously there existed one. Our investigation results indicated that characterizing the self-sensing capability of Portland cement composites is achievable through the measurements of thermoelectric properties. This study, in particular, has showcased the temperature sensing and damage detection capability.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Wittichenite Cu3BiS3: Synthesis and Physical Properties

NASA Astrophysics Data System (ADS)

Wei, Kaya; Hobbis, Dean; Wang, Hsin; Nolas, George S.

2018-04-01

Polycrystalline Cu3BiS3 was synthesized and densified using hot pressing in order to investigate the physical properties of this material. Both the thermal conductivity and the Seebeck coefficient of Cu3BiS3 are reported for the first time in order to investigate the thermoelectric properties of this material. The ultralow thermal conductivity coupled with the relatively high Seebeck coefficient, 0.17 W/m-K and 540 μV/K at room temperature, respectively, suggest Cu3BiS3 may show promise for thermoelectric applications.

Wittichenite Cu3BiS3: Synthesis and Physical Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Kaya; Hobbis, Dean; Wang, Hsin

Polycrystalline Cu 3BiS 3 was synthesized and densified using hot pressing in order to investigate the physical properties of this material. Both the thermal conductivity and the Seebeck coefficient of Cu 3BiS 3 are reported for the first time in order to investigate the thermoelectric properties of this material. The ultralow thermal conductivity coupled with the relatively high Seebeck coefficient, 0.17 W/m-K and 540 μV/K at room temperature, respectively, suggest Cu 3BiS 3 may show promise for thermoelectric applications.

Unusual Thermoelectric Behavior Indicating a Hopping to Bandlike Transport Transition in Pentacene

NASA Astrophysics Data System (ADS)

Germs, W. Chr.; Guo, K.; Janssen, R. A. J.; Kemerink, M.

2012-07-01

An unusual increase in the Seebeck coefficient with increasing charge carrier density is observed in pentacene thin film transistors. This behavior is interpreted as being due to a transition from hopping transport in static localized states to bandlike transport, occurring at temperatures below ˜250K. Such a transition can be expected for organic materials in which both static energetic disorder and dynamic positional disorder are important. While clearly visible in the temperature and density dependent Seebeck coefficient, the transition hardly shows up in the charge carrier mobility.

Wittichenite Cu3BiS3: Synthesis and Physical Properties

DOE PAGES

Wei, Kaya; Hobbis, Dean; Wang, Hsin; ...

2018-01-18

Polycrystalline Cu 3BiS 3 was synthesized and densified using hot pressing in order to investigate the physical properties of this material. Both the thermal conductivity and the Seebeck coefficient of Cu 3BiS 3 are reported for the first time in order to investigate the thermoelectric properties of this material. The ultralow thermal conductivity coupled with the relatively high Seebeck coefficient, 0.17 W/m-K and 540 μV/K at room temperature, respectively, suggest Cu 3BiS 3 may show promise for thermoelectric applications.

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Compositional disorder and its effect on the thermoelectric performance of Zn₃P₂ nanowire-copper nanoparticle composites.

PubMed

Brockway, Lance; Vasiraju, Venkata; Vaddiraju, Sreeram

2014-03-28

Recent studies indicated that nanowire format of materials is ideal for enhancing the thermoelectric performance of materials. Most of these studies were performed using individual nanowires as the test elements. It is not currently clear whether bulk assemblies of nanowires replicate this enhanced thermoelectric performance of individual nanowires. Therefore, it is imperative to understand whether enhanced thermoelectric performance exhibited by individual nanowires can be extended to bulk assemblies of nanowires. It is also imperative to know whether the addition of metal nanoparticle to semiconductor nanowires can be employed for enhancing their thermoelectric performance further. Specifically, it is important to understand the effect of microstructure and composition on the thermoelectric performance on bulk compound semiconductor nanowire-metal nanoparticle composites. In this study, bulk composites composed of mixtures of copper nanoparticles with either unfunctionalized or 1,4-benzenedithiol (BDT) functionalized Zn₃P₂ nanowires were fabricated and analyzed for their thermoelectric performance. The results indicated that use of BDT functionalized nanowires for the fabrication of composites leads to interface-engineered composites that have uniform composition all across their cross-section. The interface engineering allows for increasing their Seebeck coefficients and electrical conductivities, relative to the Zn₃P₂ nanowire pellets. In contrast, the use of unfunctionalized Zn₃P₂ nanowires for the fabrication of composite leads to the formation of composites that are non-uniform in composition across their cross-section. Ultimately, the composites were found to have Zn₃P₂ nanowires interspersed with metal alloy nanoparticles. Such non-uniform composites exhibited very high electrical conductivities, but slightly lower Seebeck coefficients, relative to Zn₃P₂ nanowire pellets. These composites were found to show a very high zT of 0.23 at 770

Thermoelectric Properties of Lanthanum Sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R.; Parker, J. B.; Zoltan, A.; Zoltan, L. D.; Danielson, L.; Raag, V.

1987-01-01

Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.

Effect of substrate on the atomic structure and physical properties of thermoelectric Ca3Co4O9 thin films

NASA Astrophysics Data System (ADS)

Qiao, Q.; Gulec, A.; Paulauskas, T.; Kolesnik, S.; Dabrowski, B.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.; Klie, R. F.

2011-08-01

The incommensurately layered cobalt oxide Ca3Co4O9 exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca3Co4O9 thin films grown on cubic perovskite SrTiO3, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates and on hexagonal Al2O3 (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO2 layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca2CoO3 buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO2 stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca3Co4O9 films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Effects of substrate-induced-strain on the electrical properties and laser induced voltages of tilted La0.67Ca0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang

2013-07-01

La0.67Ca0.33MnO3 thin films have been prepared on vicinal cut LaAlO3, (LaAlO3)0.3-(SrAlTaO6)0.7, and SrTiO3 (001) substrates by pulsed laser deposition. The influence of the substrate on the electrical transport properties and laser induced voltage (LIV) effect of the films was investigated. The high insulator to metal transition temperature Tp (263.6 K) and large peak voltage of LIV signal (2.328 V) were observed in the film grown on LaAlO3 substrate. The compressive strain and large Seebeck coefficient anisotropy ΔS (3.62 μV/K) induced by LaAlO3 are thought to be responsible for this result.

Ceramics at High Temperatures

NASA Astrophysics Data System (ADS)

Zheng, Peng; Zhang, Rui-zhi; Chen, Hao-ying; Hao, Wen-tao

2014-06-01

The Seebeck coefficient and electrical conductivity of CaCu3Ti4O12 (CCTO) ceramics were measured and analyzed in the high temperature range of 300°C to 800°C, and then the electrical conduction mechanism was investigated by using a combination of experimental data fitting and first-principles calculations. The Seebeck coefficient of the CCTO ceramic sintered at 1050°C is negative with largest absolute value of ˜650 μV/K at 300°C, and the electrical conductivity is 2-3 orders greater than the value reported previously by other researchers. With increasing sintering temperature, the Seebeck coefficient decreases while the electrical conductivity increases. The temperature dependence of the electrical conductivity follows the rule of adiabatic hopping conduction of small polarons. The calculated density of states of CCTO indicates that the conduction band is mainly contributed by the antibonding states of Cu 3 d electrons, therefore small-polaron hopping between CuO4 square planar clusters was proposed. Possible ways to further improve the thermoelectric properties of CCTO are also discussed.

Insight into mechanical properties and thermoelectric efficiency of Zr2CoZ (Z  =  Si, Ge) Heusler alloys

NASA Astrophysics Data System (ADS)

Yousuf, Saleem; Gupta, Dinesh C.

2017-11-01

We investigated the electronic, mechanical and thermoelectric properties of Zr2CoZ (Z  =  Si, Ge) Heusler alloys using the first-principles calculation. From the analysis of various elastic constants, the shear and Young’s moduli, Poisson’s ratio, the ductile nature of the alloys is predicted. Thermoelectric coefficients viz., Seebeck, electrical conductivity and figure of merit show Zr2CoZ alloys as n-type thermoelectric materials showing linearly increasing Seebeck coefficient with temperature. The value of total absolute Seebeck coefficients at 1200 K of Zr2CoSi and Zr2CoGe are 60 µV K-1 and 40 µV K-1 respectively mainly because of the existence of almost flat conduction bands along L to Г directions of high symmetry Brillouin zone. Further, the chemical potential variation of power factor confirms the n-type doping fruitful to increase their TE performance. The figure of merit achieves an upper-limit of 0.95 at 850 K and can favour their use for waste heat recovery at higher temperatures and thermoelectric spin generators.

The effect of rare earth ions on structural, morphological and thermoelectric properties of nanostructured tin oxide based perovskite materials

NASA Astrophysics Data System (ADS)

Rajasekaran, P.; Alagar Nedunchezhian, A. S.; Yalini Devi, N.; Sidharth, D.; Arivanandhan, M.; Jayavel, R.

2017-11-01

Metal oxide based materials are promising for thermoelectric applications especially at elevated temperature due to their high thermal stability. Recently, perovskite based oxide materials have been focused as a novel thermoelectric material due to their tunable electrical conductivity. Thermoelectric properties of BaSnO3 has been extensively investigated. However, the effect of various rare earth doping on the thermoelectric properties of BaSnO3 is not studied in detail. In the present work, Ba1-x RE x SnO3 (RE  =  La and Sr) materials with x  =  0.05 were prepared by polymerization complex (PC) method in order to study the effect of RE incorporation on the structural, morphological and thermoelectric characteristics of BaSnO3. The structural and morphological properties of the synthesized materials were studied by XRD and TEM analysis. XRD analysis confirmed the mixed phases of the synthesized samples. The TEM images of Ba1-x Sr x SnO3 shows hexagonal and cubic morphology while, Ba1-x La x SnO3 exhibit rod like morphology. Various functional groups of the perovskite material were identified using FTIR analysis. Formation of the perovskite material was further confirmed by XPS analysis. The Seebeck coefficient of Ba0.95La0.05SnO3 was relatively higher than that of Ba0.95Sr0.05SnO3, especially at high temperature. The rod like morphology of Ba0.95La0.05SnO3 may facilitate fast electron transport which results high thermal power compared to Ba0.95Sr0.05SnO3 despite of its poor crystalline nature. The substitution of La3+ on the Ba2+ site could vary the carrier density which results high Seebeck coefficient of Ba0.95La0.05SnO3 compared to Ba0.95Sr0.05SnO3. From the experimental results, it is obvious that Ba0.95La0.05SnO3 could be a promising thermoelectric material for high temperature application.

Attempting to realize n-type BiCuSeO

NASA Astrophysics Data System (ADS)

Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

2018-02-01

As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

Characterization of Hg1-xCdxTe heterostructures by thermoelectric measurements

NASA Astrophysics Data System (ADS)

Baars, J.; Brink, D.; Edwall, D. D.; Bubulac, L. O.

1993-08-01

P-on-n mercury cadmium telluride (MCT) heterostructures grown by MOCVD with As and In as n- and p-type dopants, respectively, are examined by measuring the Seebeck and Hall coefficients between 20 and 320K. The results are analyzed regarding doping and composition of the layers by least squares fitting the experimental profiles with the calculated temperature dependencies. The electron and hole densities of the layers are calculated taking into account Fermi-Dirac statistics, a nonparabolic conduction band, a parabolic valence band, a discrete acceptor level, and fully ionized donors. For the Seebeck coefficient, the relation we previously showed to be valid for p-type MCT1 is used. This relation relies on the thermoelectric effect in a temperature gradient resulting from the diffusion of nondegenerate carriers scattered by LO-phonons. It also fits the observed thermoelectric properties of n-type MCT in a wide temperature range. The doping and structural parameters determined from the thermoelectric measurements agreed very well with As and In profiles obtained from secondary ion mass spectroscopy measurements and the data obtained from analyses of infrared transmission measurements.

Enhancing thermoelectric properties of organic composites through hierarchical nanostructures

PubMed Central

Zhang, Kun; Zhang, Yue; Wang, Shiren

2013-01-01

Organic thermoelectric (TE) materials are very attractive due to easy processing, material abundance, and environmentally-benign characteristics, but their potential is significantly restricted by the inferior thermoelectric properties. In this work, noncovalently functionalized graphene with fullerene by π-π stacking in a liquid-liquid interface was integrated into poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate). Graphene helps to improve electrical conductivity while fullerene enhances the Seebeck coefficient and hinders thermal conductivity, resulting in the synergistic effect on enhancing thermoelectric properties. With the integration of nanohybrids, the electrical conductivity increased from ~10000 to ~70000 S/m, the thermal conductivity changed from 0.2 to 2 W·K−1m−1 while the Seebeck coefficient was enhanced by around 4-fold. As a result, nanohybrids-based polymer composites demonstrated the figure of merit (ZT) as high as 6.7 × 10−2, indicating an enhancement of more than one order of magnitude in comparison to single-phase filler-based polymer composites with ZT at the level of 10−3. PMID:24336319

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO2 with transition metal additions

NASA Astrophysics Data System (ADS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2016-07-01

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m-1 K-2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

Efficiency Study of a Commercial Thermoelectric Power Generator (TEG) Under Thermal Cycling

NASA Astrophysics Data System (ADS)

Hatzikraniotis, E.; Zorbas, K. T.; Samaras, I.; Kyratsi, Th.; Paraskevopoulos, K. M.

2010-09-01

Thermoelectric generators (TEGs) make use of the Seebeck effect in semiconductors for the direct conversion of heat to electrical energy. The possible use of a device consisting of numerous TEG modules for waste heat recovery from an internal combustion (IC) engine could considerably help worldwide efforts towards energy saving. However, commercially available TEGs operate at temperatures much lower than the actual operating temperature range in the exhaust pipe of an automobile, which could cause structural failure of the thermoelectric elements. Furthermore, continuous thermal cycling could lead to reduced efficiency and lifetime of the TEG. In this work we investigate the long-term performance and stability of a commercially available TEG under temperature and power cycling. The module was subjected to sequential hot-side heating (at 200°C) and cooling for long times (3000 h) in order to measure changes in the TEG’s performance. A reduction in Seebeck coefficient and an increase in resistivity were observed. Alternating-current (AC) impedance measurements and scanning electron microscope (SEM) observations were performed on the module, and results are presented and discussed.

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

NASA Astrophysics Data System (ADS)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

GaAs/InAs Multi Quantum Well Solar Cell

DTIC Science & Technology

2012-12-01

excited states, which explains the temperature dependence of these materials and the thermoelectric or Seebeck effect. 5 Figure 4. Temperature...dependence of conductivity [from Ref. 1] The thermoelectric field E is given by the equation: dTE Q dx  (1) where Q= thermoelectric ...G. JUNCTIONS A photovoltaic cell is a basic a pn-junction diode where p-type and n-type semiconductors are combined, as shown in Figure 17

Low-temperature dependence of the thermomagnetic transport properties of the SrTiO3/LaAlO3 interface

NASA Astrophysics Data System (ADS)

Lerer, S.; Ben Shalom, M.; Deutscher, G.; Dagan, Y.

2011-08-01

Transport measurements are reported, including Hall, Seebeck, and Nernst effects. All of these transport properties exhibit anomalous field and temperature dependencies, with a change of behavior observed at H˜1.5 T and T˜15 K. The low-temperature, low-field behaviors of all transport properties were reconciled using a simple two-band analysis. A more detailed model is required in order to explain the high-magnetic-field regime.

Electronic thermal transport in strongly correlated multilayered nanostructures

NASA Astrophysics Data System (ADS)

Freericks, J. K.; Zlatić, V.; Shvaika, A. M.

2007-01-01

The formalism for a linear-response many-body treatment of the electronic contributions to thermal transport is developed for multilayered nanostructures. By properly determining the local heat-current operator, it is possible to show that the Jonson-Mahan theorem for the bulk can be extended to inhomogeneous problems, so the various thermal-transport coefficient integrands are related by powers of frequency (including all effects of vertex corrections when appropriate). We illustrate how to use this formalism by showing how it applies to measurements of the Peltier effect, the Seebeck effect, and the thermal conductance.

Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect

NASA Astrophysics Data System (ADS)

Wang, Hongqiang; Li, Shuangming; Li, Xin; Zhong, Hong

2017-05-01

The Co-96.9 wt% Sb hypoeutectic alloy doped by 0.12 wt% YbFe was solidified in a Bridgman-type furnace based on temperature gradient zone melting (TGZM) effect. A mushy zone was observed between the complete liquid zone and the solid zone at different thermal stabilization time ranging from 15 min to 40 h. The mushy-zone solidified microstructures of the alloy only consist of CoSb3 and Sb phase. After 40 h thermal stabilization time, the volume fraction of CoSb3 in the mushy zone increases significantly up to 99.6% close to the solid-liquid interface. The hardness and fracture toughness of doped CoSb3 can reach 7.01 ± 0.69 GPa and 0.78 ± 0.08 MPa·m1/2, respectively. Meanwhile, the thermoelectric properties of the alloy were measured ranging from room temperature (RT) to 850 K. The Seebeck coefficient of the specimen prepared by TGZM effect after 40 h could reach 155 μV/K and the ZT value is 0.47 at 660 K, showing that it is feasible to prepare CoSb3 bulk material via TGZM effect. As a simple and one-step solidification method, the TGZM technique could be applied in the preparation of skutterudite compounds.

Valley-locked thermospin effect in silicene and germanene with asymmetric magnetic field induced by ferromagnetic proximity effect

NASA Astrophysics Data System (ADS)

Zhai, Xuechao; Wang, Yun-Tong; Wen, Rui; Wang, Shu-Xuan; Tian, Yue; Zhou, Xingfei; Chen, Wei; Yang, Zhihong

2018-02-01

Silicene and germanene, as graphenelike materials with observable spin-orbit couplings and two distinctive valleys, have potential applications in future low-dissipation spintronics and valleytronics. We here propose a magnetic system of silicene or germanene intercalated between two ferromagetic (FM) dielectric layers, and find that the system with a proximity-induced asymmetric magnetic field supports an attractive phenomenon named the valley-locked spin-dependent Seebeck effect (VL-SSE) driven by a thermal gradient. The VL-SSE indicates that the carries from only one valley could be thermally excited, with opposite spin polarization counterpropagating along the thermal gradient direction, while nearly no carrier from the other insulating valley is excited due to the relatively wide band gap. It is also illustrated that the VL-SSE here does not survive in the usual FM or anti-FM systems, and can be destroyed by the overlarge temperature broadening. Moreover, we prove that the signal for VL-SSE can be weakened gradually with the enhancement of the local interlayer electric field, and be strengthened lineally by increasing the source-drain temperature difference in a caloritronic field effect transistor. Further calculations indicate that the VL-SSE is robust against many perturbations, including the global and local Fermi levels as well as the magnetic strength. These findings about the valley-locked thermospin effect provide a nontrivial and convenient dimension to control the quantum numbers of spin and valley and are expected to be applied in future spin-valley logic circuits and energy-saving devices.

The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method

NASA Astrophysics Data System (ADS)

Akasaka, Masayasu; Iida, Tsutomu; Matsumoto, Atsunobu; Yamanaka, Kohei; Takanashi, Yoshifumi; Imai, Tomohiro; Hamada, Noriaki

2008-07-01

Bulk Mg2Si crystals were grown using the vertical Bridgman melt growth method. The n-type and p-type dopants, bismuth (Bi) and silver (Ag), respectively, were incorporated during the growth. X-ray powder diffraction analysis revealed clear peaks of Mg2Si with no peaks associated with the metallic Mg and Si phases. Residual impurities and process induced contaminants were investigated by using glow discharge mass spectrometry (GDMS). A comparison between the results of GDMS and Hall effect measurements indicated that electrical activation of the Bi doping in the Mg2Si was sufficient, while activation of the Ag doping was relatively smaller. It was shown that an undoped n-type specimen contained a certain amount of aluminum (Al), which was due either to residual impurities in the Mg source or the incorporation of process-induced impurities. Thermoelectric properties such as the Seebeck coefficient and the electrical and thermal conductivities were measured as a function of temperature up to 850 K. The dimensionless figures of merit for Bi-doped and Ag-doped samples were 0.65 at 840 K and 0.1 at 566 K, respectively. Temperature dependence of the observed Seebeck coefficient was fitted well by the two-carrier model. The first-principles calculations were carried out by using the all-electron band-structure calculation package (ABCAP) in which the full-potential linearized augmented-plane-wave method was employed. The ABCAP calculation adequately presents characteristics of the Seebeck coefficients for the undoped and heavily Bi-doped samples over the whole measured temperature range from room temperature to 850 K. The agreement between the theory and the experiment is poorer for the Ag-doped p-type samples.

Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films

PubMed Central

Manzano, Cristina V.; Abad, Begoña; Muñoz Rojo, Miguel; Koh, Yee Rui; Hodson, Stephen L.; Lopez Martinez, Antonio M.; Xu, Xianfan; Shakouri, Ali; Sands, Timothy D.; Borca-Tasciuc, Theodorian; Martin-Gonzalez, Marisol

2016-01-01

Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10−2 and (10.4 ± 2.6)·10−2, respectively. PMID:26776726

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugioka, Hideyuki, E-mail: hsugioka@shinshu-u.ac.jp

2016-02-15

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage thatmore » drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)].« less

Intrinsically modified thermoelectric performance of alkaline-earth isovalently substituted [Bi2AE2O4][CoO2]y single crystals

NASA Astrophysics Data System (ADS)

Sun, N.; Dong, S. T.; Zhang, B. B.; Chen, Y. B.; Zhou, J.; Zhang, S. T.; Gu, Z. B.; Yao, S. H.; Chen, Y. F.

2013-07-01

Alkaline-earth elements isovalently substituted into a [Bi2AE2O4][CoO2]y (AE2 = Ca2, Sr2, and CaSr) single crystal with a layered structure were grown by the optical floating zone method. Structural characterization by X-ray diffraction and electron microscopy showed that the layers were oriented perpendicular to the c-axis, as well as the growth of direction was parallel to the ab-plane. The thermoelectric properties, including the Seebeck effect, electrical conductivity and thermal conductivity were investigated. The results of the thermoelectric measurements showed that the full substitution of Ca for Sr in [Bi2Sr2-xCaxO4][CoO2]y has the best overall thermoelectric performance. Compared with the other two cases studied, the full Ca substituted crystal [Bi2Ca2O4][CoO2]y exhibits both reduced resistivity and thermal conductivity, but not a reduced Seebeck coefficient. The enhanced thermoelectric property in [Bi2Ca2O4][CoO2]y is mainly due to lower structural symmetry, which is confirmed by electron microscopy characterization. This work demonstrates that even isovalently substitution can play a crucial role in the thermoelectric effect of layered cobalt oxides.

Study of the thermoelectric properties of lead selenide doped with boron, gallium, indium, or thallium.

PubMed

Zhang, Qian; Cao, Feng; Lukas, Kevin; Liu, Weishu; Esfarjani, Keivan; Opeil, Cyril; Broido, David; Parker, David; Singh, David J; Chen, Gang; Ren, Zhifeng

2012-10-24

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10(19) cm(-3). No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10(-3) W m(-1) K(-2) was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl(3+) ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

Thermoelectricity near Anderson localization transitions

NASA Astrophysics Data System (ADS)

Yamamoto, Kaoru; Aharony, Amnon; Entin-Wohlman, Ora; Hatano, Naomichi

2017-10-01

The electronic thermoelectric coefficients are analyzed in the vicinity of one and two Anderson localization thresholds in three dimensions. For a single mobility edge, we correct and extend previous studies and find universal approximants which allow us to deduce the critical exponent for the zero-temperature conductivity from thermoelectric measurements. In particular, we find that at nonzero low temperatures the Seebeck coefficient and the thermoelectric efficiency can be very large on the "insulating" side, for chemical potentials below the (zero-temperature) localization threshold. Corrections to the leading power-law singularity in the zero-temperature conductivity are shown to introduce nonuniversal temperature-dependent corrections to the otherwise universal functions which describe the Seebeck coefficient, the figure of merit, and the Wiedemann-Franz ratio. Next, the thermoelectric coefficients are shown to have interesting dependences on the system size. While the Seebeck coefficient decreases with decreasing size, the figure of merit first decreases but then increases, while the Wiedemann-Franz ratio first increases but then decreases as the size decreases. Small (but finite) samples may thus have larger thermoelectric efficiencies. In the last part we study thermoelectricity in systems with a pair of localization edges, the ubiquitous situation in random systems near the centers of electronic energy bands. As the disorder increases, the two thresholds approach each other, and then the Seebeck coefficient and the figure of merit increase significantly, as expected from the general arguments of Mahan and Sofo [J. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. USA 93, 7436 (1996), 10.1073/pnas.93.15.7436] for a narrow energy range of the zero-temperature metallic behavior.

High-Temperature Thermoelectric Properties of Perovskite-Type Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1)

NASA Astrophysics Data System (ADS)

Nakatsugawa, H.; Saito, M.; Okamoto, Y.

2017-05-01

Polycrystalline samples of Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1) have been synthesized using a conventional solid-state reaction method, and the crystal structure studied at room temperature. The magnetic susceptibility was measured from 5 K to 350 K. The electrical resistivity, Seebeck coefficient, and thermal conductivity were investigated as functions of temperature below 850 K. For all samples, the perovskite structure at room temperature exhibited orthorhombic Pbnm phase. While the Pr0.9Sr0.1MnO3 ( x = 0) sample exhibited ferromagnetic-like ground state below T C = 145 K (Curie temperature), the ferromagnetic transition temperature T C decreased with increasing x. The Seebeck coefficient of the samples with 0 ≤ x ≤ 0.8 decreased with increasing temperature because of double-exchange interaction of Mn ions. In fact, the carrier type for x = 0 changed from hole-like to electron-like behavior above 800 K. On the other hand, the samples with x ≥ 0.9 showed large positive Seebeck coefficient over the entire temperature range, indicating that the low-spin state of Fe ions dominated the electronic structure for this x range. In particular, the sample with x = 1 exhibited p-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical resistivity, and low thermal conductivity. Thus, the sample with x = 1 showed power factor of 20 μW m-1 K-2 at 850 K leading to ZT of 0.024 at this temperature, indicating that hole-doped perovskite-type iron oxide is a good candidate high-temperature thermoelectric p-type oxide.

Silicon nanowire arrays as thermoelectric material for a power microgenerator

NASA Astrophysics Data System (ADS)

Dávila, D.; Tarancón, A.; Fernández-Regúlez, M.; Calaza, C.; Salleras, M.; San Paulo, A.; Fonseca, L.

2011-10-01

A novel design of a silicon-based thermoelectric power microgenerator is presented in this work. Arrays of silicon nanowires, working as thermoelectric material, have been integrated in planar uni-leg thermocouple microstructures to convert waste heat into electrical energy. Homogeneous, uniformly dense, well-oriented and size-controlled arrays of silicon nanowires have been grown by chemical vapor deposition using the vapor-liquid-solid mechanism. Compatibility issues between the nanowire growth method and microfabrication techniques, such as electrical contact patterning, are discussed. Electrical measurements of the nanowire array electrical conductivity and the Seebeck voltage induced by a controlled thermal gradient or under harvesting operation mode have been carried out to demonstrate the feasibility of the microdevice. A resistance of 240 Ω at room temperature was measured for an array of silicon nanowires 10 µm -long, generating a Seebeck voltage of 80 mV under an imposed thermal gradient of 450 °C, whereas only 4.5 mV were generated under a harvesting operation mode. From the results presented, a Seebeck coefficient of about 150-190 µV K-1 was estimated, which corresponds to typical values for bulk silicon.

Low temperature thermoelectric properties of hot pressed composite samples of CrSb2: evidence for possible phonon-drag effect.

NASA Astrophysics Data System (ADS)

Pokharel, Mani; Koirala, Machhindra; Ren, Zhifeng; Opeil, Cyril

We present on the thermoelectric transport properties of CrSb2 samples prepared by hot-press densification in the temperature range of 2 - 350 K. At around 10 K, the thermal conductivity of CrSb2 decreases dramatically by three orders of magnitude compared to the single crystal counterpart. Analysis shows that the reduced thermal conductivity results from increased scattering of the phonons off the grain-boundaries within the samples. A strong interrelationship between the thermal conductivity and the Seebeck coefficient is observed; indicating a significant presence of phonon-drag effect in this system. With ZT = 0.018 at 310 K for the sample hot pressed at 600 oC, an increase in ZT by 80 % over the previously reported values for polycrystalline samples is achieved. We gratefully acknowledge funding for this work by the Department of Defense, United States Air Force Office of Scientific Researchs MURI program under contract FA9550-10-1-0533.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

NASA Astrophysics Data System (ADS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2015-12-01

Using density functional theory, amorphous Nb0.27Ru0.06O0.56N0.10 was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of -94 μV K-1 are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Development of Inexpensive, Efficient and Non-Toxic Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Gali, Anand Pratik

In the wake of the impending climate change challenges, it is highly necessary to reevaluate our energy utilization technologies and ensure their efficient operation. Fossil fuel powered power-plants account for the majority of the energy production in the United States. With an average efficiency not exceeding 40%, these fossil fuel power plants dissipate exorbitant amounts of wasted heat. One of the ways of making such energy conversion processes more efficient is by incorporating technologies that can harvest this scavenge heat. One of the ways of achieving this is by the use of thermoelectric (TE) materials, which utilize the Seebeck effect to convert thermal gradient into potential difference. Therefore, our research project focusses on development of TE materials, which are inexpensive, efficient, and non-toxic. Fe0.50V0.25Al0.25 is a narrow band-gap semiconductor, ideal for TE applications. Unlike the current market leader Bi0.4Te0.6, Fe0.50V0.25 Al0.25 contains earth abundant and non-toxic constituents making it viable for commercial production. Nevertheless, the TE efficiency, ZT, of Fe0.50V0.25Al0.25 is limited by its high thermal conductivity. Therefore, the goal of the current research is two-fold. Firstly, to design and fabricate apparatus for performing TE characterization on bulk materials. For this purpose, two sets of apparatus were designed and fabricated for measuring high temperature Seebeck coefficient and electrical resistivity. Secondly, to study the influence of doping on TE properties of Fe0.50V0.25Al0.25 alloy. In order to achieve this, vanadium in Fe0.50V0.25Al0.25 was substituted with dopants like Ti, Cr, Zr, W, Nb, Ta. This led to a 20 times improvement in ZT, from the baseline Fe0.50V0.25Al0.25, by effectively reducing the thermal conductivity and increasing the Seebeck coefficient.

Cross-plane thermoelectric transport in p-type La0.67Sr0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices

NASA Astrophysics Data System (ADS)

Jha, Pankaj; Sands, Timothy D.; Jackson, Philip; Bomberger, Cory; Favaloro, Tela; Hodson, Stephen; Zide, Joshua; Xu, Xianfan; Shakouri, Ali

2013-05-01

The cross-plane thermoelectric transport properties of La0.67Sr0.33MnO3 (LSMO)/LaMnO3 (LMO) oxide metal/semiconductor superlattices were investigated. The LSMO and LMO thin-film depositions were performed using pulsed laser deposition to achieve low resistivity constituent materials for LSMO/LMO superlattice heterostructures on (100)-strontium titanate substrates. X-ray diffraction and high-resolution reciprocal space mapping indicate that the superlattices are epitaxial and pseudomorphic. Cross-plane devices were fabricated by etching cylindrical pillar structures in superlattices using inductively, this coupled-plasma reactive-ion etching. The cross-plane electrical conductivity data for LSMO/LMO superlattices reveal a lowering of the effective barrier height to 223 meV as well as an increase in cross-plane conductivity by an order of magnitude compared to high resistivity superlattices. These results suggest that controlling the oxygen deficiency in the constituent materials enables modification of the effective barrier height and increases the cross-plane conductivity in oxide superlattices. The cross-plane LSMO/LMO superlattices showed a giant Seebeck coefficient of 2560 μV/K at 300 K that increases to 16 640 μV/K at 360 K. The giant increase in the Seebeck coefficient with temperature may include a collective contribution from the interplay of charge, spin current, and phonon drag. The low resistance oxide superlattices exhibited a room temperature cross-plane thermal conductivity of 0.92 W/m K, this indicating that the suppression of thermal conductivities due to the interfaces is preserved in both low and high resistivity superlattices. The high Seebeck coefficient, the order of magnitude improvement in cross-plane conductivity, and the low thermal conductivity in LSMO/LMO superlattices resulted in a two order of magnitude increase in cross-plane power factor and thermoelectric figure of merit (ZT), compared to the properties of superlattices with higher

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Direct measurement of magnon temperature: new insight into magnon-phonon coupling in magnetic insulators.

PubMed

Agrawal, M; Vasyuchka, V I; Serga, A A; Karenowska, A D; Melkov, G A; Hillebrands, B

2013-09-06

We present spatially resolved measurements of the magnon temperature in a magnetic insulator subject to a thermal gradient. Our data reveal an unexpectedly close correspondence between the spatial dependencies of the exchange magnon and phonon temperatures. These results indicate that if--as is currently thought--the transverse spin Seebeck effect is caused by a temperature difference between the magnon and phonon baths, it must be the case that the magnon temperature is spectrally nonuniform and that the effect is driven by the sparsely populated dipolar region of the magnon spectrum.

Thermomagnetic phenomena in the mixed state of high temperature superconductors

NASA Technical Reports Server (NTRS)

Meilikhov, E. Z.

1995-01-01

Galvano- and thermomagnetic-phenomena in high temperature superconductors, based on kinetic coefficients, are discussed, along with a connection between the electric field and the heat flow in superconductor mixed state. The relationship that determines the transport coefficients of high temperature superconductors in the mixed state based on Seebeck and Nernst effects is developed. It is shown that this relationship is true for a whole transition region of the resistive mixed state of a superconductor. Peltier, Ettingshausen and Righi-Leduc effects associated with heat conductivity as related to high temperature superconductors are also addressed.

High thermoelectricpower factor in graphene/hBN devices

PubMed Central

Duan, Junxi; Wang, Xiaoming; Lai, Xinyuan; Li, Guohong; Taniguchi, Takashi; Zebarjadi, Mona; Andrei, Eva Y.

2016-01-01

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene’s extraordinary heat conduction, active cooling has not been considered feasible due to graphene’s low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2. We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W⋅m−1⋅K−1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W⋅m−1⋅K−1, in YbAl3, and quadrupling the best 2D power factor, 2.5 W⋅m−1⋅K−1, in MoS2. We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices. PMID:27911824

Solvent-Based Synthesis of Nano-Bi0.85Sb0.15 for Low-Temperature Thermoelectric Applications

NASA Astrophysics Data System (ADS)

Kaspar, K.; Fritsch, K.; Habicht, K.; Willenberg, B.; Hillebrecht, H.

2017-01-01

In this study we show a preparation method for nanostructured Bi0.85Sb0.15 powders via a chemical reduction route in a polyol medium, yielding material with particle sizes of 20-150 nm in scalable amounts. The powders were consolidated by spark plasma sintering (SPS) in order to maintain the nanostructure. To investigate influence of the sinter process, the powders were characterized by x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and scanning electron microscopy (SEM) measurements before and after SPS. Transport properties, Seebeck effect, and thermal conductivity were determined in the low temperature range below 300 K. The samples showed excellent thermal conductivity of 2.3-2.6 W/m × K at 300 K and Seebeck coefficients from -97 μV/K to -107 μV/K at 300 K with a maximum of -141 μV/K at 110 K, thus leading to ZT values of up to 0.31 at room temperature. The results show that Bi-Sb-alloys are promising materials for low-temperature applications. Our wet chemical approach gives access to scalable amounts of nano-material with increased homogeneity and good thermoelectric properties after SPS.

Studying physical properties of CuInS2 absorber layers grown by spin coating method on different kinds of substrates

NASA Astrophysics Data System (ADS)

Amerioun, M. H.; Ghazi, M. E.; Izadifard, M.

2018-03-01

In this work, first the CuInS2 (CIS2) layers are deposited on Aluminum and polyethylene terephthalate (PET) as flexible substrates, and on glass and soda lime glass (SLG) as rigid substrates by the sol-gel method. Then the samples are analyzed by x-ray diffractomery (XRD) and atomic force microscope (AFM) to investigate the crystal structures and surface roughness of the samples. The I-V curve measurements and Seebeck effect setup are used to measure the electrical properties of the samples. The XRD data obtained for the CIS2 layers show that all the prepared samples have a single phase with a preferred orientation that is substrate-dependent. The samples grown on the rigid substrates had higher crystallite sizes. The results obtained for the optical measurements indicate the dependence of the band gap energy on the substrate type. The measured Seebeck coefficient showed that the carriers were of p-type in all the samples. According to the AFM images, the surface roughness also varied in the CIS2 layers with different substrates. In this regard, the type of substrate could be an important parameter for the final performance of the fabricated CIS2 cells.

Thermoelectric Properties of Highly Conductive Poly(3,4-ethylenedioxythiophene) Polystyrene Sulfonate Printed Thin Films.

PubMed

Beretta, Davide; Barker, Alex J; Maqueira-Albo, Isis; Calloni, Alberto; Bussetti, Gianlorenzo; Dell'Erba, Giorgio; Luzio, Alessandro; Duò, Lamberto; Petrozza, Annamaria; Lanzani, Guglielmo; Caironi, Mario

2017-05-31

Organic conductors are being evaluated for potential use in waste heat recovery through lightweight and flexible thermoelectric generators manufactured using cost-effective printing processes. Assessment of the potentiality of organic materials in real devices still requires a deeper understanding of the physics behind their thermoelectric properties, which can pave the way toward further development of the field. This article reports a detailed thermoelectric study of a set of highly conducting inkjet-printed films of commercially available poly(3,4-ethylenedioxythiophene) polystyrene sulfonate formulations characterized by in-plane electrical conductivity, spanning the interval 10-500 S/cm. The power factor is maximized for the formulation showing an intermediate electrical conductivity. The Seebeck coefficient is studied in the framework of Mott's relation, assuming a (semi-)classical definition of the transport function. Ultraviolet photoelectron spectroscopy at the Fermi level clearly indicates that the shape of the density of states alone is not sufficient to explain the observed Seebeck coefficient, suggesting that carrier mobility is important in determining both the electrical conductivity and thermopower. Finally, the cross-plane thermal conductivity is reliably extracted thanks to a scaling approach that can be easily performed using typical pump-probe spectroscopy.

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO{sub 2} with transition metal additions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus

2016-07-28

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO{sub 2} with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m{sup −1} K{sup −2} for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to puremore » NbO{sub 2} and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.« less

Effects of Sb Content (x) on (Bi(1-x)Sb(x))2Te3 Thermoelectric Thin Film Deposited by Effusion Cell Evaporator.

PubMed

Yong, Ho; Na, Sekwon; Gang, Jun-Gu; Jeon, Seong-Jae; Hyun, Seungmin; Lee, Hoo-Jeong

2015-10-01

This paper investigates the effects of the Sb content (x) on (Bi(1-x)Sb(x))2Te3 thermoelectric films with x changing widely from 0 (Sb2Te3) to 1 (Bi2Te3). First, the XRD analysis discloses that with the Sb content (x) increasing, the phase changed gradually from Bi2Te3 to Sb2Te3 as Sb atoms replaced substitutionally Bi atoms. Further microstructure analysis reveals that an extensive grain growth occurred during post-annealing for the samples with high Sb contents. According to the measurement of electrical and thermoelectric properties, the polarity of the charge carrier and Seebeck coefficient switched n-type to p-type in the range of x = 0.45~0.63. For the n-type samples, the power factor is highest when x = 0.18 around 46.01 μW/K(2) whereas Sb2Te3, for the p-type samples, shows the highest value, 62.48 μW/K(2)cm.

Enhanced thermoelectric power and electronic correlations in RuSe₂

DOE PAGES

Wang, Kefeng; Wang, Aifeng; Tomic, A.; ...

2015-03-03

We report the electronic structure, electric and thermal transport properties of Ru 1-xIr xSe₂ (x ≤ 0.2). RuSe₂ is a semiconductor that crystallizes in a cubic pyrite unit cell. The Seebeck coefficient of RuSe₂ exceeds -200 μV/K around 730 K. Ir substitution results in the suppression of the resistivity and the Seebeck coefficient, suggesting the removal of the peaks in density of states near the Fermi level. Ru 0.8Ir 0.2Se₂ shows a semiconductor-metal crossover at about 30 K. The magnetic field restores the semiconducting behavior. Our results indicate the importance of the electronic correlations in enhanced thermoelectricity of RuSb₂.

Investigation of transport properties of FeTe compound

NASA Astrophysics Data System (ADS)

Lodhi, Pavitra Devi; Solanki, Neha; Choudhary, K. K.; Kaurav, Netram

2018-05-01

Transport properties of FeTe parent compound has been investigated by measurements of electrical resistivity, magnetic susceptibility and Seebeck coefficient. The sample was synthesized through a standard solid state reaction route via vacuum encapsulation and characterized by x-ray diffraction, which indicated a tetragonal phase with space group P4/nmm. The parent FeTe compound does not exhibit superconductivity but shows an anomaly in the resistivity measurement at around 67 K, which corresponds to a structural phase transition along with in the vicinity of a magnetic phase transition. In the low temperature regime, Seebeck coefficient, S(T), exhibited an anomalous dip feature and negative throughout the temperature range, indicating electron-like charge carrier conduction mechanism.

Effects of Pd substitution on the thermoelectric and electronic properties of delafossite Cu{sub 1−x}Pd{sub x}FeO{sub 2} (x=0.01, 0.03 and 0.05)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruttanapun, Chesta, E-mail: chesta.ruttanapun@gmail.com

Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} (x=0.01, 0.03 and 005) delafossite was prepared by solid state reactions and was calcined/sintered at 1050 °C. The effect of Pd{sup 2+} substitution for the Cu{sup 1+} sites on the thermoelectric and electronic properties of Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} were investigated. The crystal structure, oxygen decomposition, thermoelectric and electronic properties were characterized by X-ray diffraction, thermogravimetric analysis, X-ray photoelectron spectroscopy (XPS), Seebeck coefficient, electrical conductivity and thermal conductivity measurements. The characterization showed that Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} formed a hexagonal delafossite structure with R3−m symmetry. The existence of Pd{sup 2+}, Cu{sup 1+}, Cu{sup 2+}, Fe{sup 3+},more » Fe{sup 4+} and O was revealed from the XPS results. Confirmation of Pd{sup 2+} substitution for the Cu{sup 1+} sites occurred by increasing the c-axis in the lattice parameter with a Pd content. The O content intercalated at the center of the triangular Cu acted as a support to produce Cu{sup 2+} ions and was reduced with an increasing Pd content. The mixed valencies of Cu{sup 1+}/Cu{sup 2+} and Cu{sup 1+}/Pd{sup 2+} in the Cu layer changed the electrical conductivity and the Fe{sup 3+}/Fe{sup 4+} mixed valencies in the FeO{sub 6} layer caused the Seebeck coefficient to increase. Both the electrical conductivity and Seebeck coefficient for Pd contents of x=0.01 and 0.03 were higher than that of non-doped CuFeO{sub 2}. The low thermal conductivity of Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} resulted from the substitution of Pd, which has a large atomic mass, into structure. The Jonker plot indicated that the electronic properties displayed a degenerate density of states and that Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} was a semiconductor. A high ZT value of 0.055 was obtained for a Pd content of 0.03 at 950 K. The Pd{sup 2+} substitution for the Cu{sup 1+} sites influenced the

Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

NASA Technical Reports Server (NTRS)

Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

2010-01-01

Direct energy conversion between thermal and electrical energy, based on thermoelectric (TE) effect, has the potential to recover waste heat and convert it to provide clean electric power. The energy conversion efficiency is related to the thermoelectric figure of merit ZT expressed as ZT=S(exp 2)(sigma)T/Kappa, T is temperature, S is the Seebeck coefficient, sigma is conductance and Kappa is thermal conductivity. For a lower thermal conductivity Kappa and high power factor (S(exp 2)(sigma)), our current strategy is the development of rhombohedrally strained single crystalline SiGe materials that are highly [111]-oriented twinned. The development of a SiGe "twin lattice structure (TLS)" plays a key role in phonon scattering. The TLS increases the electrical conductivity and decreases thermal conductivity due to phonon scattering at stacking faults generated from the 60 X rotated primary twin structure. To develop high performance materials, the substrate temperature, chamber working pressure, and DC sputtering power are controlled for the aligned growth production of SiGe layer and TLS on a c-plane sapphire. Additionally, a new elevated temperature thermoelectric characterization system, that measures the thermal diffusivity and Seebeck effect nondestructively, was developed. The material properties were characterized at various temperatures and optimized process conditions were experimentally determined. The present paper encompasses the technical discussions toward the development of thermoelectric materials and the measurement techniques.

Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

NASA Astrophysics Data System (ADS)

Fuseya, Yuki

2015-03-01

Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

Effects of spin entropy and lattice strain from mixed-trivalent Fe3+/Cr3+ on the electronic, thermoelectric and optical properties of delafossite CuFe1-x Cr x O2 (x  =  0.25, 0.5, 0.75)

NASA Astrophysics Data System (ADS)

Ruttanapun, Chesta; Maensiri, Santi

2015-12-01

Mixed-trivalent Fe3+/Cr3+ content CuFe1-x Cr x O2 (x  =  0.25, 0.5, and 0.75) compounds were synthesized to investigate the effects of spin entropy, and lattice strain on their electronic, thermoelectric and optical properties. The XPS results showed the existence of mixed Cu1+/Cu2+, Fe3+/Fe4+ and Cr2+/Cr3+ ion states in the structures. The mixed Fe3+/Cr3+ions caused a strong correlation to occur between the spin and the orbitals of the carriers in the octahedral layer of the sample, affecting the carrier degeneracy Seebeck coefficient behaviour, and the Cu2+ and Fe4+ ions caused an effect of enhancing the electric conductivity. These effects meant that CuFe0.75Cr0.25O2 had the highest electrical conductivity, an enhanced Seebeck coefficient compared to that of CuFeO2-based compounds, and the highest thermopower value. The lowest thermal conductivity was that of CuFe0.5Cr0.5O2, which was a result of the mismatched atomic radii of the mixed trivalent Fe3+(0.645 Å)/Cr3+(0.615 Å), which caused the lattice strain to occur in the structure and thus affected the point defect scattering of the phonon thermal conductivity. The lowest total thermal conductivity was that of CuFe0.5Cr0.5O2, because it had the maximum lattice strain. Overall, the effect of the mixed trivalent elements caused CuFe0.75Cr0.25O2 to have the highest value of the dimensionless figure of merit ZT, with a value that was four times that of CuFeO2-based compounds and six times that of CuCrO2-based compounds. With regard to optical properties, the lattice strain causes the indirect optical gap to increase with increasing x content, but has no effect on the direct optical gap. These results verified that the mixed-trivalent Fe3+/Cr3+ content of CuFe1-x Cr x O2 (x  =  0.25, 0.5, and 0.75) affected the electronic, thermoelectric and optical properties of the structure by causing spin entropy and lattice strain to occur.

Ab Initio Calculations of Transport Properties of Vanadium Oxides

NASA Astrophysics Data System (ADS)

Lamsal, Chiranjivi; Ravindra, N. M.

2018-04-01

The temperature-dependent transport properties of vanadium oxides have been studied near the Fermi energy using the Kohn-Sham band structure approach combined with Boltzmann transport equations. V2O5 exhibits significant thermoelectric properties, which can be attributed to its layered structure and stability. Highly anisotropic electrical conduction in V2O5 is clearly manifested in the calculations. Due to specific details of the band structure and anisotropic electron-phonon interactions, maxima and crossovers are also seen in the temperature-dependent Seebeck coefficient of V2O5. During the phase transition of VO2, the Seebeck coefficient changes by 18.9 µV/K, which is close to (within 10% of) the observed discontinuity of 17.3 µV/K.

Thermoelectric property measurements with computer controlled systems

NASA Technical Reports Server (NTRS)

Chmielewski, A. B.; Wood, C.

1984-01-01

A joint JPL-NASA program to develop an automated system to measure the thermoelectric properties of newly developed materials is described. Consideration is given to the difficulties created by signal drift in measurements of Hall voltage and the Large Delta T Seebeck coefficient. The benefits of a computerized system were examined with respect to error reduction and time savings for human operators. It is shown that the time required to measure Hall voltage can be reduced by a factor of 10 when a computer is used to fit a curve to the ratio of the measured signal and its standard deviation. The accuracy of measurements of the Large Delta T Seebeck coefficient and thermal diffusivity was also enhanced by the use of computers.

Thermoelectric Properties of Dy-Doped SrTiO3 Ceramics

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, C. L.; Peng, H.; Su, W. B.; Wang, H. C.; Li, J. C.; Zhang, J. L.; Mei, L. M.

2012-11-01

Sr1- x Dy x TiO3 ( x = 0.02, 0.05, 0.10) ceramics were prepared by the reduced solid-state reaction method, and their thermoelectric properties were investigated from room temperature to 973 K. The resistivity increases with temperature, showing metallic behavior. The Seebeck coefficients tend to saturate at high temperatures, presenting narrow-band behavior, as proved by ab initio calculations of the electronic structure. The magnitudes of the Seebeck coefficient and the electrical resistivity decrease with increasing Dy content. At the same time, the thermal conductivity decreases because the lattice thermal conductivity is reduced by Dy substitution. The maximum value of the figure of merit reaches 0.25 at 973 K for the Sr0.9Dy0.1TiO3 sample.

Enhancement of thermoelectric figure of merit in zigzag graphene nanoribbons with periodic edge vacancies

NASA Astrophysics Data System (ADS)

Kolesnikov, D. V.; Sadykova, O. G.; Osipov, V. A.

2017-06-01

The influence of periodic edge vacancies and antidot arrays on the thermoelectric properties of zigzag graphene nanoribbons (ZGNRs) are investigated. Using Green’s function method, the tight-binding approximation for the electron Hamiltonian and the 4th nearest neighbor approximation for the phonon dynamical matrix, we calculate the Seebeck coefficient and the thermoelectric figure of merit. It is found that, at a certain periodic arrangement of vacancies on both edges of zigzag nanoribbon, a finite band gap opens and almost twofold degenerate energy levels appear. As a result, a marked increase in the Seebeck coefficient takes place. It is shown that an additional enhancement of the thermoelectric figure of merit can be achieved by a combination of periodic edge defects with an antidot array.

Effect of nanostructure on thermoelectric properties of La0.7Sr0.3MnO3 in 300–600 K temperature range

NASA Astrophysics Data System (ADS)

Singh, Saurabh; Srivastav, Simant Kumar; Patel, Ashutosh; Chatterjee, Ratnamala; Pandey, Sudhir K.

2018-05-01

In oxide materials, nanostructuring effect has been found a very promising approach for the enhancement of figure-of-merit, ZT. In the present work, we have synthesized La0.7Sr0.3MnO3 (LSMO) compound using sol-gel method and samples of crystallite size of ∼20, ∼41, and ∼49 nm were obtained by giving different heat treatment. Seebeck coefficient (α), electrical resistivity (ρ), and thermal conductivity (κ) measurements were carried out in 300–600 K temperature range. The systematic change in the values of α from ∼‑19 μV/K to ∼‑24 μV/K and drastic reduction in the values of κ from ∼0.88 W/mK to ∼0.23 W/mK are observed as crystallite size is reduced from 49 nm to 20 nm at ∼600 K. Also, fall in the values of ρ in the paramagnetic (PM) insulator phase (400–600 K) are effectively responsible for the increasing trend in the values of ZT at high temperature. For the crystallite size of 41 nm, the value of ZT at 600 K was found to be ∼0.017.

Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys

NASA Technical Reports Server (NTRS)

Snyder, J.; Gerovac, N.; Caillat, T.

2002-01-01

(BixSbl-x)2Te3(.5 = x = .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated fiom these properties.

Unique magnetic and thermoelectric properties of chemically functionalized narrow carbon polymers.

PubMed

Zberecki, K; Wierzbicki, M; Swirkowicz, R; Barnaś, J

2017-02-01

We analyze magnetic, transport and thermoelectric properties of narrow carbon polymers, which are chemically functionalized with nitroxide groups. Numerical calculations of the electronic band structure and the corresponding transmission function are based on density functional theory. Transport and thermoelectric parameters are calculated in the linear response regime, with particular interest in charge and spin thermopowers (charge and spin Seebeck effects). Such nanoribbons are shown to have thermoelectric properties described by large thermoelectric efficiency, which makes these materials promising from the application point of view.

Importance of Schottky barriers for wide-bandgap thermoelectric devices

NASA Astrophysics Data System (ADS)

Wais, M.; Held, K.; Battiato, M.

2018-04-01

The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.

A strategy to optimize the thermoelectric performance in a spark plasma sintering process

PubMed Central

Chiu, Wan-Ting; Chen, Cheng-Lung; Chen, Yang-Yuan

2016-01-01

Spark plasma sintering (SPS) is currently widely applied to existing alloys as a means of further enhancing the alloys’ figure of merit. However, the determination of the optimal sintering condition is challenging in the SPS process. This report demonstrates a systematic way to independently optimize the Seebeck coefficient S and the ratio of electrical to thermal conductivity (σ/κ) and thus achieve the maximum figure of merit zT = S2(σ/κ)T. Sb2−xInxTe3 (x = 0–0.2) were chosen as examples to validate the method. Although high sintering temperature and pressure are helpful in enhancing the compactness and electrical conductivity of pressed samples, the resultant deteriorated Seebeck coefficient and increasing thermal conductivity eventually offset the benefit. We found that the optimal sintering temperature coincides with temperatures at which the maximum Seebeck coefficient begins to degrade, whereas the optimal sintering pressure coincided with the pressure at which the σ/κ ratio reaches a maximum. Based on this principle, the optimized sintering conditions were determined, and the zT of Sb1.9In0.1Te3 is raised to 0.92 at 600 K, showing an approximately 84% enhancement. This work develops a facile strategy for selecting the optimal SPS sintering condition to further enhance the zT of bulk specimens. PMID:26975209

Thermoelectric Properties of Cu-doped Bi0.4Sb1.6Te3 Prepared by Hot Extrusion

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-06-01

Cu0.003Bi0.4Sb1.6Te3 alloys were prepared by using encapsulated melting and hot extrusion (HE). The hot-extruded specimens had the relative average density of 98%. The ( 00l) planes were preferentially oriented parallel to the extrusion direction, but the specimens showed low crystallographic anisotropy with low orientation factors. The specimens were hot-extruded at 698 K, and they showed excellent mechanical properties with a Vickers hardness of 76 Hv and a bending strength of 59 MPa. However, as the HE temperature increased, the mechanical properties degraded due to grain growth. The hot-extruded specimens showed positive Seebeck coefficients, indicating that the specimens have p-type conduction. These specimens exhibited negative temperature dependences of electrical conductivity, and thus behaved as degenerate semiconductors. The Seebeck coefficient reached the maximum value at 373 K and then decreased with increasing temperature due to intrinsic conduction. Cu-doped specimens exhibited high power factors due to relatively higher electrical conductivities and Seebeck coefficients than those of undoped specimens. A thermal conductivity of 1.00 Wm-1 K-1 was obtained at 373 K for Cu0.003Bi0.4Sb1.6Te3 hot-extruded at 723 K. A maximum dimensionless figure of merit, ZT max = 1.05, and an average dimensionless figure of merit, ZT ave = 0.98, were achieved at 373 K.

Enhancement of thermoelectric performance in strontium titanate by praseodymium substitution

NASA Astrophysics Data System (ADS)

Kovalevsky, A. V.; Yaremchenko, A. A.; Populoh, S.; Weidenkaff, A.; Frade, J. R.

2013-02-01

In order to identify the effects of Pr additions on thermoelectric properties of strontium titanate, crystal structure, electrical and thermal conductivity, and Seebeck coefficient of Sr1-xPrxTiO3 (x = 0.02-0.30) materials were studied at 400 < T < 1180 K under highly reducing atmosphere. The mechanism of electronic transport was found to be similar up to 10% of praseodymium content, where generation of the charge carriers upon substitution resulted in significant increase of the electrical conductivity, moderate decrease in Seebeck coefficient, and general improvement of the power factor. Formation of point defects in the course of substitution led to suppression of the lattice thermal conductivity, whilst the contribution from electronic component was increasing with carrier concentration. Possible formation of layered structures and growing distortion of the perovskite lattice resulted in relatively low thermoelectric performance for Sr0.80Pr0.20TiO3 and Sr0.70Pr0.30TiO3. The maximum dimensionless figure of merit was observed for Sr0.90Pr0.10TiO3 and amounted to ˜0.23 at 670 K and ˜0.34 at 1170 K, close to the values, obtained in similar conditions for the best bulk thermoelectrics, based on rare-earth substituted SrTiO3.

Enhanced Thermoelectric Performance of n-type Bi2O2Se Ceramics Induced by Ge Doping

NASA Astrophysics Data System (ADS)

Ruleova, P.; Plechacek, T.; Kasparova, J.; Vlcek, M.; Benes, L.; Lostak, P.; Drasar, C.

2018-02-01

Ceramic samples with the composition Bi2- x Ge x O2Se1.01 ( x = 0, 0.05, 0.075, and 0.1) were synthesized by solid-state reaction and compacted using a hot-pressing technique. The prepared materials were characterized by x-ray diffraction analysis, electron microscopy, and measurements of electrical conductivity σ, Seebeck coefficient S, and thermal conductivity in the temperature range 300-780 K. Ge in the Bi2O2Se host structure led to an increase of the free electron concentration compared to pristine Bi2O2Se1.01. The donor effect is attributed to point substitutional defects in the Bi sublattice— {Ge}_{{Bi}}^{ + }, and oxygen vacancies {V}_{{O}}^{ + 2} producing free electrons. As a result, we observe an increase in the electrical conductivity and decrease in Seebeck coefficient while thermal conductivity κ changes slightly. The highest value of the dimensionless figure of merit ZT = σS 2 T/ κ reaches 0.25 for the composition Bi1.95Ge0.05O2Se1.01 at T = 723 K, which is, to date, the highest ZT value reported for Bi2O2Se ceramics. Our results suggest that Bi2O2Se is still worth exploring.

Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4.

PubMed

Zhang, Dan; Yang, Junyou; Jiang, Qinghui; Zhou, Zhiwei; Li, Xin; Xin, Jiwu; Basit, Abdul; Ren, Yangyang; He, Xu; Chu, Weijing; Hou, Jingdi

2017-08-30

The effect of Al-, Ga-, and In-doping on the thermoelectric (TE) properties of Cu 3 SbSe 4 has been comparatively studied on the basis of theoretical prediction and experimental validation. It is found that tiny Al/Ga/In substitution leads to a great enhancement of electrical conductivity with high carrier concentration and also large Seebeck coefficient due to the preserved high band degeneracy and thereby a remarkably high power factor. Ultimately, coupled with the depressed lattice thermal conductivity, all three elements (Al/Ga/In) substituted samples have obtained a highly improved thermoelectric performance with respect to undoped Cu 3 SbSe 4 . Compared to the samples at the same Al/In doping level, the slightly Ga-doped sample presents better TE performance over the wide temperature range, and the Cu 3 Sb 0.995 Ga 0.005 Se 4 sample presents a record high ZT value of 0.9 among single-doped Cu 3 SbSe 4 at 623 K, which is about 80% higher than that of pristine Cu 3 SbSe 4 . This work offers an alternative approach to boost the TE properties of Cu 3 SbSe 4 by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

Confinement- and strain-induced enhancement of thermoelectric properties in LaNiO3/LaAlO3(001 ) superlattices

NASA Astrophysics Data System (ADS)

Geisler, Benjamin; Pentcheva, Rossitza

2018-05-01

By combining ab initio simulations including an on-site Coulomb repulsion term and Boltzmann theory, we explore the thermoelectric properties of (LaNiO3)n /(LaAlO3)n (001) superlattices (n =1 ,3 ) and identify a strong dependence on confinement, spacer thickness, and epitaxial strain. While the system with n =3 shows modest values of the Seebeck coefficient and power factor, the simultaneous reduction of the LaNiO3 region and the LaAlO3 spacer thickness to single layers results in a strong enhancement, in particular of the in-plane values. This effect can be further tuned by using epitaxial strain as a control parameter: Under tensile strain corresponding to the lateral lattice constant of SrTiO3 we predict in- and cross-plane Seebeck coefficients of ±600 μ V /K and an in-plane power factor of 11 μ W /K2cm for an estimated relaxation time of τ =4 fs around room temperature. These values are comparable to some of the best performing oxide systems such as La-doped SrTiO3 or layered cobaltates and are associated with the opening of a small gap (0.29 eV) induced by the concomitant effect of octahedral tilting and Ni-site disproportionation. This establishes oxide superlattices at the verge of a metal-to-insulator transition driven by confinement and strain as promising candidates for thermoelectric materials.

Enhancing thermoelectrochemical properties by tethering ferrocene to the anion or cation of ionic liquids: altered thermodynamics and solubility.

PubMed

Aldous, Leigh; Black, Jeffrey J; Elias, Maximo C; Gélinas, Bruno; Rochefort, Dominic

2017-09-13

Entropic changes inherent within a redox process typically result in significant temperature sensitivity. This can be utilised positively or can be a detrimental process. This study has investigated the thermoelectrochemical properties (temperature-dependant electrochemistry) of the ferrocenium|ferrocene redox couple in an ionic liquid, and in particular the effect of covalently tethering this redox couple to fixed positive or negative charges. As such, the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide was employed to dissolve ferrocene, as well as cationic-tethered ferrocene (the 1-ethyl-3-(methylferrocenyl)imidazolium cation) and anionic-tethered ferrocene (the ferrocenylsulfonyl(trifluoromethylsulfonyl)imide anion). These systems were characterised in terms of their voltammetry (apparent formal potentials, diffusion coefficients and electron transfer rate constants) and thermoelectrochemistry (temperature coefficients of the cell potential or 'Seebeck coefficients', short circuit current densities and power density outputs). The oxidised cationic species behaved like a dicationic species and was thus 6-fold more effective at converting waste thermal energy to electrical power within a thermoelectrochemical cell than unmodified ferrocene. This was almost exclusively due to a significant boost in the Seebeck coefficient of this redox couple. Conversely, the oxidised anionic species was formally a zwitterion, but this zwitterionic species behaved thermodynamically like a neutral species. The inverted entropic change upon going from ferrocene to anion-tethered ferrocene allowed development of a largely temperature-insensitive reference potential based upon a mixture of acetylferrocene and ferricenyl(iii)sulfonyl(trifluoromethylsulfonyl)imide.

Density functional theory and experimental study of the electronic structure and transport properties of La, V, Nb, and Ta doped SrTiO3

NASA Astrophysics Data System (ADS)

Baniecki, J. D.; Ishii, M.; Aso, H.; Kurihara, K.; Ricinschi, Dan

2013-01-01

The electronic structure and transport properties of donor doped SrTiO3 are studied using density functional theory with spin-orbit coupling and conductivity, Hall, and Seebeck effect measurements over a wide temperature range (100 K to 600 K). Split-off energies ΔSO are tunable through the dopant SO interaction strength and concentration varying from 28.1 meV for pure STO to 70.93 meV for SrTi0.5Nb0.5O3. At lower carrier concentrations and temperatures, SO coupling has a marked effect on both the filling dependence of the density-of-states mass as well as the temperature dependence of the Seebeck coefficient, with quantitative theoretical predictions based on DFT calculations that include the SO interaction in closer agreement to the experimental data. Moreover, the results suggest that the predictive power of the current theory is not unlimited, with less accuracy for the calculated S predicting the magnitude of the experimental S data at lower dopant concentrations than for degenerately doped systems. A concentration dependent mass enhancement of ˜2-5, relative to the density-of-states mass in the local density approximation, possibly due to the influence of electronic screening of the electron-phonon interaction, would bring the theoretical S in accord with the experimental S data. This additional carrier-dependent enhancement mechanism for S may give an additional degree of freedom in terms of designing new higher efficiency thermoelectric energy materials.

Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals

NASA Astrophysics Data System (ADS)

Narayan Banerjee, Arghya; Joo, Sang Woo

2013-04-01

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 1018 cm-3. Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K-1. This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Poole-Frenkel effect in sputter-deposited CuAlO(2+x) nanocrystals.

PubMed

Banerjee, Arghya Narayan; Joo, Sang Woo

2013-04-26

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 10(18) cm(-3). Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K(-1). This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Thermoelectric effects of amorphous Ga-Sn-O thin film

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

The Physics of Thermoelectric Energy Conversion

NASA Astrophysics Data System (ADS)

Goldsmid, H. Julian

2017-04-01

This book outlines the principles of thermoelectric generation and refrigeration from the discovery of the Seebeck and Peltier effects in the 19th century through the introduction of semiconductor thermoelements in the mid-20th century to the more recent development of nanostructured materials. The conditions for favourable electronic properties are discussed. The methods for selecting materials with a low lattice thermal conductivity are outlined and the ways in which the scattering of phonons can be enhanced are described. The book is aimed at readers without specialised knowledge.

Anomalous reversal of transverse thermoelectric voltage in CoδFe100-δ /YIG junction

NASA Astrophysics Data System (ADS)

Ramos, R.; Wongjom, P.; Iguchi, R.; Yagmur, A.; Qiu, Z.; Pinitsoontorn, S.; Uchida, K.; Saitoh, E.

2018-02-01

We have studied thermoelectric conversion in all-ferromagnetic CoδFe100-δ /YIG bilayer junctions as a function of the chemical composition δ . We performed measurements of the transverse thermoelectric voltage upon application of a magnetic field. The voltage measured in the longitudinal spin Seebeck effect configuration shows a sign reversal at δ = 40%, which cannot be explained by the conventional electronic transport, such as the anomalous Nernst and Hall effects in the CoδFe100-δ layer. Our results suggest a possible role of the sd-type exchange interaction between Co40Fe60 and YIG at the interface as a possible origin for the observed behavior.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x)

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Chen, Nancy; Gascoin, Franck; Mueller, Eckhard; Karpinski, Gabriele; Stiewe, Christian

2006-01-01

A document presents a study of why materials of composition (Ag1 ySbTe2)0.05 (PbTe)0.95 [0< or = y < or = 1] were previously reported to have values of the thermoelectric figure of merit [ZT (where Z = alpha(sup 2)/rk, alpha is the Seebeck coefficient, r is electrical resistivity, k is thermal conductivity, and T is absolute temperature)] ranging from <1 to >2. In the study, samples of (AgSbTe2)0.05(PbTe)0.95, (Ag0.67SbTe2)0.05 (PbTe)0.95, and (Ag0.55SbTe2)0.05(PbTe)0.95 were prepared by melting followed, variously, by slow or rapid cooling. Analyses of these samples by x-ray diffraction, electron microscopy, and scanning-microprobe measurements of the Seebeck coefficient led to the conclusion that these materials have a multiphase character on a scale of the order of millimeters, even though they appear homogeneous in x-ray diffraction and electron microscopy. The Seebeck measurements showed significant variations, including both n-type and p-type behavior in the same sample. These variations were found to be consistent with observed variations of ZT. The rapidly quenched samples were found to be less inhomogeneous than were the furnace-cooled ones; hence, rapid quenching was suggested as a basis of research on synthesizing more nearly uniform high-ZT samples.

Effects of Rapid Solidification on Phase Formation and Microstructure Evolution of AgSbTe₂-Based Thermoelectric Compounds.

PubMed

Castellero, Alberto; Fiore, Gianluca; Evenstein, Eliran; Baricco, Marcello; Amouyal, Yaron

2017-03-01

We report on rapid solidification of an Ag(16.7)Sb(30.0)Te(53.3) compound using planar flow casting to stabilize the δ-AgSbTe₂ single phase and avoid precipitation of the interconnected Sb₂Te₃ phase, which leads to deterioration of thermoelectric properties. Rapidly solidified samples are in form of flakes with different thickness (60–400 μm). Precipitation of Sb2Te₃ phase is fully inhibited in thin flakes (thickness below 100 μm), which consist of an homogeneous δ-AgSbTe₂ matrix, whereas isolated Sb₂Te₃ precipitates, dispersed throughout the δ-AgSbTe₂ matrix, were found in thick flakes (thickness above 100 μm). The lattice parameter of the δ-AgSbTe₂ phase progressively increases with the cooling rate, indicating progressive supersaturation of the matrix for high degree of supercooling. Bulk specimens were prepared by hot pressing of the rapidly solidified flakes to evaluate thermoelectric properties. After sintering of the rapidly solidified flakes, the differential scanning calorimetry (DSC) traces indicates partial decomposition of the non equilibrium δ-AgSbTe₂ into the stable phases. Measurements of the thermoelectric transport properties indicate the positive effects of rapid solidification on thermal conductivity and Seebeck coefficient and its negative effect on electrical conductivity, suggesting an operative way to improve thermoelectric performance.

Thermoelectric Properties in the TiO2/SnO2 System

NASA Technical Reports Server (NTRS)

Dynys, F.; Sayir, A.; Sehirlioglu, A.; Berger, M.

2009-01-01

Nanotechnology has provided a new interest in thermoelectric technology. A thermodynamically driven process is one approach in achieving nanostructures in bulk materials. TiO2/SnO2 system exhibits a large spinodal region with exceptional stable phase separated microstructures up to 1400 C. Fabricated TiO2/SnO2 nanocomposites exhibit n-type behavior with Seebeck coefficients greater than -300 .V/K. Composites exhibit good thermal conductance in the range of 7 to 1 W/mK. Dopant additions have not achieved high electrical conductivity (<1000 S/m). Formation of oxygen deficient composites, TixSn1-xO2-y, can change the electrical conductivity by four orders of magnitude. Achieving higher thermoelectric ZT by oxygen deficiency is being explored. Seebeck coeffcient, thermal conductivity, electrical conductance and microstructure will be discussed in relation to composition and doping.

Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Zhifeng; Zhang, Qian; Chen, Gang

A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionlessmore » figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.« less

Transport properties of cubic crystalline Ge 2Sb 2Te 5: a potential low-temperature thermoelectric material.

DOE PAGES

Sun, Jifeng; Mukhopadhyay, Saikat; Subedi, Alaska; ...

2015-03-26

Ge 2Sb 2Te 5 (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coe cients 200 - 300 μV/K in its cubic crystalline phase (c-GST) at remarkably high p-type doping levels of 1 10 19 - 6 10 19 cm -3 at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coe cient was found to exceed 200 μV/K for a doping range 1 10 19 - 3.5 10 19 cm -3. Given that the lattice thermal conductivity in this phase has already beenmore » measured to be extremely low ( 0.7 W/m-K at 300 K), our results suggest the possibility of using c-GST as a low-temperature thermoelectric material.« less

Study of thermal stability of Cu{sub 2}Se thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohra, Anil, E-mail: anilbohra786@gmail.com; Bhatt, Ranu; Bhattacharya, Shovit

2016-05-23

Sustainability of thermoelectric parameter in operating temperature range is a key consideration factor for fabricating thermoelectric generator or cooler. In present work, we have studied the stability of thermoelectric parameter of Cu{sub 2}Se within the temperature range of 50-800°C. Temperature dependent Seebeck coefficients and electrical resistivity measurement are performed under three continuous thermal cycles. X-ray diffraction pattern shows the presence of mixed cubic-monoclinic Cu{sub 2}Se phase in bare pellet which transforms to pure α-Cu{sub 2}Se phase with repeating thermal cycle. Significant enhancement in Seebeck coefficient and electrical resistivity is observed which may be attributed to (i) Se loss observed inmore » EDS and (ii) the phase transformation from mixed cubic-monoclinic structure to pure monoclinic α-Cu{sub 2}Se phase.« less

Conductivity and power factor enhancement of n-type semiconducting polymers using sodium silica gel dopant

NASA Astrophysics Data System (ADS)

Madan, Deepa; Zhao, Xingang; Ireland, Robert M.; Xiao, Derek; Katz, Howard E.

2017-08-01

This work demonstrates the use of sodium silica gel (Na-SG) particles as a reducing agent for n-type conjugated polymers to improve the conductivity and thermoelectric properties. Substantial increase in the electrical conductivity (σ, from 10-7 to 10-3 S/cm in air) was observed in two naphthalenetetracarboxylic diimide solution-processable n-type polymers, one of which was designed and synthesized in our lab. Systematic investigations of electrical conductivity were done by varying the weight percentage of Na-SG in the polymers. Additional evidence for the reduction process was obtained from electron spin resonance spectroscopy and control experiments involving nonreducing silica particles and non-electron-accepting polystyrene. The Seebeck coefficient S of the highest conductivity sample was measured and found to be in agreement with an empirical model. All the electrical conductivity and Seebeck coefficients measurements were performed in ambient atmosphere.

Photo-induced thermoelectric response in suspended single-walled carbon nanotube films

NASA Astrophysics Data System (ADS)

St-Antoine, Benoit; Menard, David; Martel, Richard

2010-03-01

A study was carried out on the position dependent photovoltage of suspended single-walled carbon nanotube films in vacuum. The photoresponse of such films was found to be driven by a thermal mechanism, rather than by direct photoexcitation of carriers. [1] A model was developed which establishes a relation between the photoresponse profile and the local Seebeck coefficient of the film, thus opening up new perspectives for material characterization. The technique was demonstrated by monitoring the doping changes in the nanotube films obtained by successive current conditioning steps. Since the Seebeck coefficient of carbon nanotubes spans a considerable range depending on their doping state, the photovoltage amplitude can be tuned and large responses have been measured (up to 0.75mV for 1.2mW). [4pt] [1] B. St-Antoine et al. Nano Lett. 9, 3503 (2009)

Versatile apparatus for thermoelectric characterization of oxides at high temperatures

NASA Astrophysics Data System (ADS)

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G.

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Versatile apparatus for thermoelectric characterization of oxides at high temperatures.

PubMed

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Transport, Structural and Mechanical Properties of Quaternary FeVTiAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2016-11-01

The electronic, structural, magnetic and transport properties of FeVTiAl quaternary alloy have been investigated within the framework of density functional theory. The material is a completely spin-polarized half-metallic ferromagnet in its ground state with F-43m structure. The structural stability was further confirmed by elastic constants in the cubic phase with high Young's modulus and brittle nature. The present study predicts an energy band gap of 0.72 eV in a localized minority spin channel at equilibrium lattice parameter of 6.00 Å. The transport properties of the material are discussed based on the Seebeck coefficient, and electrical and thermal conductivity coefficients. The alloy presents large values of Seebeck coefficients, ~39 μV K-1 at room temperature (300 K), and has an excellent thermoelectric performance with ZT = ~0.8.

Effect of High Pressure and Temperature on Structural, Thermodynamic and Thermoelectric Properties of Quaternary CoFeCrAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

Employing first-principles based on density functional theory we have investigated the structural, magneto-electronic, thermoelectric and thermodynamic properties of quaternary Heusler alloy CoFeCrAl. Electronic band structure displays that CoFeCrAl is an indirect band gap semiconductor in spin-down state with the band gap value of 0.65 eV. Elastic constants reveal CoFeCrAl is a mechanically stable structure having a Debye temperature of 648 K along with a high melting temperature (2130 K). The thermoelectric properties in the temperature range 50-800 K have been calculated. CoFeCrAl possesses a high Seebeck coefficient of - 46 μV/K at room temperature along with the huge power factor of ˜ 4.8 (1012 μW cm-1 K-2 s-1) which maximizes the figure-of-merit up to ˜ 0.75 at 800 K temperature and suggesting CoFeCrAl as potential thermoelectric material. The effect of high pressure and high temperature on the thermal expansion, Grüneisen parameter and heat capacity were also studied by using the quasi-harmonic Debye model.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

NASA Astrophysics Data System (ADS)

Dimple; Jena, Nityasagar; De Sarkar, Abir

2017-06-01

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS2 (ML-MoS2) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid-Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS2 is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the (direct) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm2 V-1 s-1. Such strain sensitive thermoelectric responses in ML-MoS2 could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting.

Significant Enhancement in the Thermoelectric Properties of PEDOT:PSS Films through a Treatment with Organic Solutions of Inorganic Salts.

PubMed

Fan, Zeng; Du, Donghe; Yu, Zhimeng; Li, Pengcheng; Xia, Yijie; Ouyang, Jianyong

2016-09-07

Conducting polymers have promising thermoelectric application because they have many advantages including abundant elements, mechanical flexibility, and nontoxicity. The thermoelectric properties of conducting polymers strongly depend on their chemical structure and microstructure. Here, we report a novel and facile method to significantly enhance the thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) films through a treatment with organic solutions of inorganic salts. N,N-Dimethylformamide (DMF) and a common inorganic salt like zinc chloride (ZnCl2) are used as the solvent and solute of the solutions, respectively. The treatments can significantly increase both the Seebeck coefficient and electrical conductivity of the PSS films. The thermoelectric properties of the PSS films are sensitive to the experimental conditions, such as the salt concentration, treatment temperature, and the cation of the salts. After treatment at the optimal experimental conditions, the PSS films can exhibit a Seebeck coefficient of 26.1 μV/K and an electrical conductivity of over 1400 S/cm at room temperature. The corresponding power factor is 98.2 μW/(m·K(2)). The mechanism for the enhancement in the thermoelectric properties is attributed to the segregation of some PSSH chains from PSS and the conformation change of PEDOT chains as a result of the synergetic effects of inorganic salts and DMF.

Composition- and crystallinity-dependent thermoelectric properties of ternary BixSb2-xTey films

NASA Astrophysics Data System (ADS)

Kim, Jiwon; Lim, Jae-Hong; Myung, Nosang V.

2018-01-01

BixSb2-xTey films with controlled compositions were synthesized by a simple and cost-effective electrodeposition technique followed by post-annealing, for thermoelectric applications. Tailoring the chemical composition of ternary BixSb2-xTey materials is critical to adjust the carrier concentration and carrier type, which are crucial to determine their thermoelectric performance. Herein, the composition of electrodeposited BixSb2-xTey film was simply tailored by controlling the [Sb]/[Bi] ratio in the electrolytes while maintaining their dense and uniform morphology. Crystallographic properties of the BixSb2-xTey films, such as crystallinity and grain size changes, were confirmed by X-ray diffraction. Room-temperature measurements of electrical conductivity, Hall mobility, and carrier concentration revealed that the substitution of Bi with Sb decreased the carrier concentration, and increased the mobility. The Seebeck coefficient of the ternary BixSb2-xTey films transitioned between p- and n-type characteristics with an increase in the Bi content. Moreover, the mobility-dependent electrical conductivity of the Bi10Sb30Te60 film resulted in a high Seebeck coefficient owing to decreased carrier concentration of the film, leading to a power factor (PF) of ∼490 μW/m K2. This is more than 10 times higher than the PF values of binary nanocrystalline Sb2Te3 films.

Unravelling Doping Effects on PEDOT at the Molecular Level: From Geometry to Thermoelectric Transport Properties.

PubMed

Shi, Wen; Zhao, Tianqi; Xi, Jinyang; Wang, Dong; Shuai, Zhigang

2015-10-14

Tuning carrier concentration via chemical doping is the most successful strategy to optimize the thermoelectric figure of merit. Nevertheless, how the dopants affect charge transport is not completely understood. Here we unravel the doping effects by explicitly including the scattering of charge carriers with dopants on thermoelectric properties of poly(3,4-ethylenedioxythiophene), PEDOT, which is a p-type thermoelectric material with the highest figure of merit reported. We corroborate that the PEDOT exhibits a distinct transition from the aromatic to quinoid-like structure of backbone, and a semiconductor-to-metal transition with an increase in the level of doping. We identify a close-to-unity charge transfer from PEDOT to the dopant, and find that the ionized impurity scattering dominates over the acoustic phonon scattering in the doped PEDOT. By incorporating both scattering mechanisms, the doped PEDOT exhibits mobility, Seebeck coefficient and power factors in very good agreement with the experimental data, and the lightly doped PEDOT exhibits thermoelectric properties superior to the heavily doped one. We reveal that the thermoelectric transport is highly anisotropic in ordered crystals, and suggest to utilize large power factors in the direction of polymer backbone and low lattice thermal conductivity in the stacking and lamellar directions, which is viable in chain-oriented amorphous nanofibers.

Effect of Printing Parameters on Tensile, Dynamic Mechanical, and Thermoelectric Properties of FDM 3D Printed CABS/ZnO Composites.

PubMed

Aw, Yah Yun; Yeoh, Cheow Keat; Idris, Muhammad Asri; Teh, Pei Leng; Hamzah, Khairul Amali; Sazali, Shulizawati Aqzna

2018-03-22

Fused deposition modelling (FDM) has been widely used in medical appliances, automobile, aircraft and aerospace, household appliances, toys, and many other fields. The ease of processing, low cost and high flexibility of FDM technique are strong advantages compared to other techniques for thermoelectric polymer composite fabrication. This research work focuses on the effect of two crucial printing parameters (infill density and printing pattern) on the tensile, dynamic mechanical, and thermoelectric properties of conductive acrylonitrile butadiene styrene/zinc oxide (CABS/ZnO composites fabricated by FDM technique. Results revealed significant improvement in tensile strength and Young's modulus, with a decrease in elongation at break with infill density. Improvement in dynamic storage modulus was observed when infill density changed from 50% to 100%. However, the loss modulus and damping factor reduced gradually. The increase of thermal conductivity was relatively smaller compared to the improvement of electrical conductivity and Seebeck coefficient, therefore, the calculated figure of merit (ZT) value increased with infill density. Line pattern performed better than rectilinear, especially in tensile properties and electrical conductivity. From the results obtained, FDM-fabricated CABS/ZnO showed much potential as a promising candidate for thermoelectric application .

Thermal Recovery from Cold-Working in Type K Bare-Wire Thermocouples

NASA Astrophysics Data System (ADS)

Greenen, A. D.; Webster, E. S.

2017-12-01

Cold-working of most thermocouples has a significant, direct impact on the Seebeck coefficient which can lead to regions of thermoelectric inhomogeneity and accelerated drift. Cold-working can occur during the wire swaging process, when winding the wire onto a bobbin, or during handling by the end user—either accidentally or deliberately. Swaging-induced cold-work in thermocouples, if uniformly applied, may result in a high level of homogeneity. However, on exposure to elevated temperatures, the subsequent recovery process from the cold-working can then result in significant drift, and this can in turn lead to erroneous temperature measurements, often in excess of the specified manufacturer tolerances. Several studies have investigated the effects of cold-work in Type K thermocouples usually by bending, or swaging. However, the amount of cold-work applied to the thermocouple is often difficult to quantify, as the mechanisms for applying the strains are typically nonlinear when applied in this fashion. A repeatable level of cold-working is applied to the different wires using a tensional loading apparatus to apply a known yield displacement to the thermoelements. The effects of thermal recovery from cold-working can then be accurately quantified as a function of temperature, using a linear gradient furnace and a high-resolution homogeneity scanner. Variation in these effects due to differing alloy compositions in Type K wire is also explored, which is obtained by sourcing wire from a selection of manufacturers. The information gathered in this way will inform users of Type K thermocouples about the potential consequences of varying levels of cold-working and its impact on the Seebeck coefficient at a range of temperatures between ˜ 70°C and 600° C. This study will also guide users on the temperatures required to rapidly alleviate the effects of cold-working using thermal annealing treatments.

Motorcycle waste heat energy harvesting

NASA Astrophysics Data System (ADS)

Schlichting, Alexander D.; Anton, Steven R.; Inman, Daniel J.

2008-03-01

Environmental concerns coupled with the depletion of fuel sources has led to research on ethanol, fuel cells, and even generating electricity from vibrations. Much of the research in these areas is stalling due to expensive or environmentally contaminating processes, however recent breakthroughs in materials and production has created a surge in research on waste heat energy harvesting devices. The thermoelectric generators (TEGs) used in waste heat energy harvesting are governed by the Thermoelectric, or Seebeck, effect, generating electricity from a temperature gradient. Some research to date has featured platforms such as heavy duty diesel trucks, model airplanes, and automobiles, attempting to either eliminate heavy batteries or the alternator. A motorcycle is another platform that possesses some very promising characteristics for waste heat energy harvesting, mainly because the exhaust pipes are exposed to significant amounts of air flow. A 1995 Kawasaki Ninja 250R was used for these trials. The module used in these experiments, the Melcor HT3-12-30, produced an average of 0.4694 W from an average temperature gradient of 48.73 °C. The mathematical model created from the Thermoelectric effect equation and the mean Seebeck coefficient displayed by the module produced an average error from the experimental data of 1.75%. Although the module proved insufficient to practically eliminate the alternator on a standard motorcycle, the temperature data gathered as well as the examination of a simple, yet accurate, model represent significant steps in the process of creating a TEG capable of doing so.

In-situ Observation of Size and Irradiation Effects on Thermoelectric Properties of Bi-Sb-Te Nanowire in FIB Trimming

PubMed Central

Chien, Chia-Hua; Lee, Ping-Chung; Tsai, Wei-Han; Lin, Chien-Hung; Lee, Chih-Hao; Chen, Yang-Yuan

2016-01-01

In this report, the thermoelectric properties of a Bi0.8Sb1.2Te2.9 nanowire (NW) were in-situ studied as it was trimmed from 750 down to 490 and 285 nm in diameter by a focused ion beam. While electrical and thermal conductivities both indubitably decrease with the diameter reduction, the two physical properties clearly exhibit different diameter dependent behaviors. For 750 and 490 nm NWs, much lower thermal conductivities (0.72 and 0.69 W/m-K respectively) were observed as compared with the theoretical prediction of Callaway model. The consequence indicates that in addition to the size effect, extra phonon scattering of defects created by Ga ion irradiation was attributed to the reduction of thermal conductivities. As the NW was further trimmed down to 285 nm, both the electrical and thermal conductivities exhibited a dramatic reduction which was ascribed to the formation of amorphous structure due to Ga ion irradiation. The size dependence of Seebeck coefficient and figure of merit (ZT) show the maximum at 750 nm, then decrease linearly with size decrease. The study not only provides the thoroughly understanding of the size and defect effects on the thermoelectric properties but also proposes a possible method to manipulate the thermal conductivity of NWs via ion irradiation. PMID:27030206

Crystal structure and physical properties of a novel Kondo antiferromagnet: U3Ru4Al12

NASA Astrophysics Data System (ADS)

Pasturel, M; Tougait, O; Potel, M; Roisnel, T; Wochowski, K; Noël, H; Troć, R

2009-03-01

A novel ternary compound U3Ru4Al12 has been identified in the U-Ru-Al ternary diagram. Single-crystal x-ray diffraction indicates a hexagonal Gd3Ru4Al12-type structure for this uranium-based intermetallic. While this structure type usually induces geometrically a spin-glass behaviour, an antiferromagnetic ordering is observed at TN = 8.4 K in the present case. The reduced effective magnetic moment of U atoms (μeff = 2.6 µB) can be explained by Kondo-like interactions and crystal field effects that have been identified by a logarithmic temperature dependence of the electrical resistivity, negative values of the magnetoresistivity and particular shape of the Seebeck coefficient.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

NASA Astrophysics Data System (ADS)

Saidaoui, Hamed Ben Mohamed; Manchon, A.

2016-07-01

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ . While the spin Hall effect dominates in the diffusive limit (d ≫λ ), spin swapping dominates in the Knudsen regime (d ≲λ ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

2012-01-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Sintering characteristics and properties of PuS and PuP are determined

NASA Technical Reports Server (NTRS)

Kruger, O. L.; Moser, J. B.

1969-01-01

Report on the preparation of plutonium monosulphide and plutonium monophosphide includes a description of the sintering characteristics and properties of these high-temperature compounds. data on weight loss, microstructure, density, melting point, thermal expansion, microhardness, Seebeck coefficient, and thermal diffusion are included.

First-principles study of giant thermoelectric power in incommensurate TlInSe2

NASA Astrophysics Data System (ADS)

Ishikawa, M.; Nakayama, T.; Wakita, K.; Shim, Y. G.; Mamedov, N.

2018-04-01

Ternary thallium compound TlInSe2 exhibits a giant Seebeck effect below around 410 K, where Tl atoms form one dimensional incommensurate (IC) arrays. To clarify the origin of large thermoelectric power in the IC phase, the electronic properties of Tl-atom super-structured TlInSe2 were studied using the first-principles calculations. It was shown that the super-structures induce strong binding states between Se-p orbitals in the nearest neighboring layers and produce large density of states near lower conduction bands, which might be one of the origins to produce large thermoelectric power.

Experimental study of the valence band of Bi 2 Se 3

DOE PAGES

Gao, Yi-Bin; He, Bin; Parker, David; ...

2014-09-26

The valence band of Bi 2Se 3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

Thermomicrocapillaries as temperature biosensors in single cells

NASA Astrophysics Data System (ADS)

Herth, Simone; Giesguth, Miriam; Wedel, Waldemar; Reiss, Günther; Dietz, Karl-Josef

2013-03-01

Temperature is an important physical parameter in biology and its deviation from optimum can cause damage in biosystems. Thermocouples based on the Seebeck effect can be structured on glass microcapillaries to obtain thermomicrocapillaries (TMCs) usable in a micromanipulation setup. The suitability of the setup was proven by monitoring the temperature increase upon illumination of leaves and single cells following insertion of the TMC. The increase was 1.5 K in green tissue and 0.75 K in white leaf sections due to lower absorption. In single cells of trichomes, the increase was 0.5 K due to heat dissipation to the surrounding air.

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

NASA Astrophysics Data System (ADS)

Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

2011-11-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Achieving high thermoelectric performance of Cu1.8S composites with WSe2 nanoparticles.

PubMed

Qin, Peng; Ge, Zhen-Hua; Chen, Yue-Xing; Chong, Xiaoyu; Feng, Jing; He, Jiaqing

2018-08-24

Polycrystalline p-type Cu 1.8 S composites with WSe 2 nanoparticles were fabricated by the mechanical alloying method combined with the spark plasma sintering technique. The Seebeck coefficient was significantly enhanced by the optimized carrier concentration, while the thermal conductivity was simultaneously decreased due to the refined grain and WSe 2 nanoparticles. An enhanced Seebeck coefficient of 110 μV K -1 and a reduced thermal conductivity of 0.68 W m -1 K -1 were obtained for the Cu 1.8 S + 1 wt% WSe 2 sample at 773 K, resulting in a remarkably enhanced peak ZT of 1.22 at 773 K, which is 2.5 times higher than that (0.49 at 773 K) of a pristine Cu 1.8 S sample. The cheap and environmentally friendly Cu 1.8 S-based materials with enhanced properties may find promising applications in thermoelectric devices.

Thermal properties of Pr2/3Sr1/3MnO3 manganites:PdO composites

NASA Astrophysics Data System (ADS)

Rao, Ashok; Manjunatha, S. O.; Bhatt, Ramesh Chandra; Awana, V. P. S.; Lin, C. F.; Kuo, Y. K.; Poornesh, P.

2017-10-01

In the present communication the results on thermal conductivity, Seebeck coefficient and specific heat of Pr2/3Sr1/3MnO3:PdO composites are reported. All the samples exhibit a pronounced anomaly in thermal conductivity (κ) at their respective Curie temperatures, TC of the samples. It is also observed that the overall magnitude of κ decreases with increasing Pd content. The observed reduction of the total k(T) is discussed with various thermal scattering mechanisms. The temperature-dependent Seebeck coefficient data S(T) in the high temperature region is analyzed within the framework of Mott's polaron hopping model. The analysis of low-temperature S(T) data reveals that the electron-magnon scattering contribution dominates the thermoelectric transport at low temperatures. The magnetic contribution for the CP and change in entropy (ΔS) during the magnetic phase transition is also evaluated.

Thermoelectric properties of conducting polyaniline/BaTiO3 nanoparticle composite films

NASA Astrophysics Data System (ADS)

Anno, H.; Yamaguchi, K.; Nakabayashi, T.; Kurokawa, H.; Akagi, F.; Hojo, M.; Toshima, N.

2011-05-01

Conducting polyaniline (PANI)/BaTiO3 nanoparticle composite films with different molar ratio values R=1, 5, 10, and 100 have been prepared on a quartz substrate by casting the m-cresol solution of PANI, (±)-10-camphorsulfonic acid (CSA) and BaTiO3 nanoparticle with an average diameter of about 20 nm. The CSA-doped PANI/BaTiO3 composite films were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and UV-Vis transmission spectroscopy. The Seebeck coefficient and the electrical conductivity of the films with different R values, together with CSA-doped PANI films, were measured in the temperature range from room temperature to ~400 K. The relation between the Seebeck coefficient and the electrical conductivity in the composite films are discussed from a comparison of them with those of CSA-doped PANI films and other PANI composite films.

Electronic structure and thermoelectric transport properties of the golden Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} under pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Bin, E-mail: hnsqxubin@163.com; Gao, Changzheng; Zhang, Jing

2016-05-15

A lot of physical properties of Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30 GPa to 35 GPa, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease withmore » increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.« less

Ionic thermoelectric gating organic transistors

PubMed Central

Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

2017-01-01

Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

High-temperature thermoelectric properties of the double-perovskite ruthenium oxide (Sr1-xLax)2ErRuO6

NASA Astrophysics Data System (ADS)

Takahashi, Ryohei; Okazaki, Ryuji; Yasui, Yukio; Terasaki, Ichiro; Sudayama, Takaaki; Nakao, Hironori; Yamasaki, Yuichi; Okamoto, Jun; Murakami, Youichi; Kitajima, Yoshinori

2012-10-01

We have prepared polycrystalline samples of (Sr1-xLax)2ErRuO6 and (Sr1-xLax)2YRuO6, and have measured the resistivity, Seebeck coefficient, thermal conductivity, susceptibility, and x-ray absorption in order to evaluate the electronic states and thermoelectric properties of the doped double-perovskite ruthenates. We have observed a large Seebeck coefficient of -160 μV/K and a low thermal conductivity of 7 mW/cmK for x = 0.1 at 800 K in air. These two values are suitable for efficient oxide thermoelectrics, although the resistivity is still as high as 1 Ω cm. From the susceptibility and x-ray absorption measurements, we find that the doped electrons exist as Ru4+ in the low spin state. On the basis of the measured results, the electronic states and the conduction mechanism are discussed.

Enhanced Thermoelectric Response of Ca0.96Dy0.02Re0.02MnO3 Ceramics (Re = La, Nd, Sm) at High Temperature

NASA Astrophysics Data System (ADS)

Zhu, Yuanhu; Wang, Chunlei; Su, Wenbin; Liu, Jian; Li, Jichao; Du, Yanling; Zhang, Xinhua; Qin, Yalin; Mei, Liangmo

2015-01-01

Perovskite-type Ca0.98Dy0.02MnO3, Ca0.96Dy0.04MnO3, and Ca0.96Dy0.02 Re0.02MnO3 (Re = La, Nd, Sm) were prepared by solid-state reaction, and their thermoelectric properties were evaluated between 300 and 1000 K. All were single-phase, with an orthorhombic structure, and had metal-like temperature dependence of resistivity and Seebeck coefficient. The second doping element, Re = La, Nd, or Sm, introduced a larger carrier concentration, leading to a decrease in both resistivity and Seebeck coefficient. This contributed to lower thermal conductivity by introducing a second element into the system. The highest figure of merit, 0.20, was obtained for Re = La at 973 K; this was an increase of almost 100% compared with Ca0.98Dy0.02MnO3 at the same temperature.

Ceramics

NASA Astrophysics Data System (ADS)

Zhang, Bo; Chang, Aimin; Zhao, Qing; Ye, Haitao; Wu, Yiquan

2014-11-01

The microstructure and thermoelectric properties of Yb-doped Ca0.9- x Yb x La0.1 MnO3 (0 ≤ x ≤ 0.05) ceramics prepared by using the Pechini method derived powders have been investigated. X-ray diffraction analysis has shown that all samples exhibit single phase with orthorhombic perovskite structure. All ceramic samples possess high relative densities, ranging from 97.04% to 98.65%. The Seebeck coefficient is negative, indicating n-type conduction in all samples. The substitution of Yb for Ca leads to a marked decrease in the electrical resistivity, along with a moderate decrease in the absolute value of the Seebeck coefficient. The highest power factor is obtained for the sample with x = 0.05. The electrical conduction in these compounds is due to electrons hopping between Mn3+ and Mn4+, which is enhanced by increasing Yb content.

Ba6-3 x Nd8+2 x Ti18O54 Tungsten Bronze: A New High-Temperature n-Type Oxide Thermoelectric

NASA Astrophysics Data System (ADS)

Azough, Feridoon; Freer, Robert; Yeandel, Stephen R.; Baran, Jakub D.; Molinari, Marco; Parker, Stephen C.; Guilmeau, Emmanuel; Kepaptsoglou, Demie; Ramasse, Quentin; Knox, Andy; Gregory, Duncan; Paul, Douglas; Paul, Manosh; Montecucco, Andrea; Siviter, Jonathan; Mullen, Paul; Li, Wenguan; Han, Guang; Man, Elena A.; Baig, Hasan; Mallick, Tapas; Sellami, Nazmi; Min, Gao; Sweet, Tracy

2016-03-01

Semiconducting Ba6-3 x Nd8+2 x Ti18O54 ceramics (with x = 0.00 to 0.85) were synthesized by the mixed oxide route followed by annealing in a reducing atmosphere; their high-temperature thermoelectric properties have been investigated. In conjunction with the experimental observations, atomistic simulations have been performed to investigate the anisotropic behavior of the lattice thermal conductivity. The ceramics show promising n-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical conductivity, and temperature-stable, low thermal conductivity; For example, the composition with x = 0.27 (i.e., Ba5.19Nd8.54Ti18O54) exhibited a Seebeck coefficient of S 1000K = 210 µV/K, electrical conductivity of σ 1000K = 60 S/cm, and thermal conductivity of k 1000K = 1.45 W/(m K), leading to a ZT value of 0.16 at 1000 K.

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Magnetic and thermoelectric properties of the ternary pseudo-hollandite BaxCr5Se8 (0.5 < x < 0.55) solid solution.

PubMed

Lefèvre, Robin; Berthebaud, David; Bux, Sabah; Hébert, Sylvie; Gascoin, Franck

2016-07-26

The structure of Ba0.5Cr5Se8 has been recently resolved, and its thermoelectric and magnetic properties have been studied. A ZT of 0.12 was found at around 800 K. Here, we report a study on the pseudo-hollandite BaxCr5Se8 solid-solution with 0.5 ≤ x ≤ 0.55 and its thermoelectric and magnetic properties. There is no significant impact either on the cell parameters depending on the cation content or on the magnetic properties. However, thermoelectric properties are radically changed depending on x content. While the low thermal conductivity, around 0.8 W m(-1) K(-1), remains similar for all samples, a respective increase and decrease of the resistivity and the Seebeck coefficient are observed with increasing Ba content. The maximum Seebeck coefficient is found with Ba0.5Cr5Se8 at around 635 K with 315 μV K(-1), and the Seebeck coefficient then decreases and is correlated with an activation of minority charge carriers confirmed by Hall measurements. A similar but steeper behavior is observed for the Ba0.55Cr5Se8 temperature dependence plot at around 573 K. Finally, the best thermoelectric performances are found using the lowest content of Ba, unlike when x tends to 0.55, ZT approaches a tenth of the initial best value. BaxCr5Se8 compounds are antiferromagnetic with TN = 58 K. A large peak in thermal conductivity is observed around the antiferromagnetic transition for all stoichiometry.

Measuring Thermoelectric Properties Automatically

NASA Technical Reports Server (NTRS)

Chmielewski, A.; Wood, C.

1986-01-01

Microcomputer-controlled system speeds up measurements of Hall voltage, Seebeck coefficient, and thermal diffusivity in semiconductor compounds for thermoelectric-generator applications. With microcomputer system, large data base of these parameters gathered over wide temperature range. Microcomputer increases measurement accuracy, improves operator productivity, and reduces test time.

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

Improved thermoelectric power output from multilayered polyethylenimine doped carbon nanotube based organic composites

NASA Astrophysics Data System (ADS)

Hewitt, Corey A.; Montgomery, David S.; Barbalace, Ryan L.; Carlson, Rowland D.; Carroll, David L.

2014-05-01

By appropriately selecting the carbon nanotube type and n-type dopant for the conduction layers in a multilayered carbon nanotube composite, the total device thermoelectric power output can be increased significantly. The particular materials chosen in this study were raw single walled carbon nanotubes for the p-type layers and polyethylenimine doped single walled carbon nanotubes for the n-type layers. The combination of these two conduction layers leads to a single thermocouple Seebeck coefficient of 96 ± 4 μVK-1, which is 6.3 times higher than that previously reported. This improved Seebeck coefficient leads to a total power output of 14.7 nW per thermocouple at the maximum temperature difference of 50 K, which is 44 times the power output per thermocouple for the previously reported results. Ultimately, these thermoelectric power output improvements help to increase the potential use of these lightweight, flexible, and durable organic multilayered carbon nanotube based thermoelectric modules in low powered electronics applications, where waste heat is available.

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

DOE PAGES

Liu, Huili; Sung Choe, Hwan; Chen, Yabin; ...

2017-09-05

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictorymore » to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.« less

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Huili; Sung Choe, Hwan; Chen, Yabin

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictorymore » to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takaki, Hirokazu; Kobayashi, Kazuaki; Shimono, Masato

We present the thermoelectric properties of TiN/MgO superlattices employing first-principles calculation techniques. The Seebeck coefficients, the electrical conductances, the thermal conductances, and the figure of merit are investigated employing electrical and thermal transport calculations based on density functional theory combined with the nonequilibrium Green's function and nonequilibrium molecular dynamics simulation methods. The TiN/MgO superlattices with a small lattice mismatch at the interfaces are ideal systems to study the way for an enhancement of thermoelectric properties in artificial nanostructures. We find that the interfacial scattering between the two materials in the metal/insulator superlattices causes the electrical conductance to change rapidly, whichmore » enhances the Seebeck coefficient significantly. We show that the figure of merit for the artificial superlattice nanostructures has a much larger value compared with that of the bulk material and changes drastically with the superlattice configurations at the atomistic level.« less

High-performance thermoelectricity in edge-over-edge zinc-porphyrin molecular wires.

PubMed

Noori, Mohammed; Sadeghi, Hatef; Lambert, Colin J

2017-04-20

If high efficiency organic thermoelectric materials could be identified, then these would open the way to a range of energy harvesting technologies and Peltier coolers using flexible and transparent thin-film materials. We have compared the thermoelectric properties of three zinc porphyrin (ZnP) dimers and a ZnP monomer and found that the "edge-over-edge" dimer formed from stacked ZnP rings possesses a high electrical conductance, negligible phonon thermal conductance and a high Seebeck coefficient of the order of 300 μV K -1 . These combine to yield a predicted room-temperature figure of merit of ZT ≈ 4, which is the highest room-temperature ZT ever reported for a single organic molecule. This high value of ZT is a consequence of the low phonon thermal conductance arising from the stacked nature of the porphyrin rings, which hinders phonon transport through the edge-over-edge molecule and enhances the Seebeck coefficient.

Electronic transport properties of intermediately coupled superconductors: PdTe2 and Cu0.04PdTe2

NASA Astrophysics Data System (ADS)

Hooda, M. K.; Yadav, C. S.

2018-01-01

We have investigated the electrical resistivity (1.8-480 K), Seebeck coefficient (2.5-300 K) and thermal conductivity (2.5-300 K) of PdTe2 and 4% Cu intercalated PdTe2 compounds. The electrical resistivity for the compounds shows a Bloch-Gruneisen-type linear temperature (T) dependence for 100 \\text{K}, and Fermi liquid behavior (ρ (T) \\propto T2) for T<50 \\text{K} . Seebeck coefficient data exhibit a strong competition between Normal (N) and Umklapp (U) scattering processes at low T. The low-T, thermal conductivity (κ) of the compounds is strongly dominated by the electronic contribution, and exhibits a rare linear T-dependence below 10 K. However, high-T, κ (T) shows the usual 1/T -dependence, dominated by the U-scattering process. The electron-phonon coupling parameters, estimated from the low-T, specific-heat data and first-principle electronic structure calculations suggest that PdTe2 and Cu0.04PdTe2 are intermediately coupled superconductors.

Large thermoelectric power factor from crystal symmetry-protected non-bonding orbital in half-Heuslers.

PubMed

Zhou, Jiawei; Zhu, Hangtian; Liu, Te-Huan; Song, Qichen; He, Ran; Mao, Jun; Liu, Zihang; Ren, Wuyang; Liao, Bolin; Singh, David J; Ren, Zhifeng; Chen, Gang

2018-04-30

Modern society relies on high charge mobility for efficient energy production and fast information technologies. The power factor of a material-the combination of electrical conductivity and Seebeck coefficient-measures its ability to extract electrical power from temperature differences. Recent advancements in thermoelectric materials have achieved enhanced Seebeck coefficient by manipulating the electronic band structure. However, this approach generally applies at relatively low conductivities, preventing the realization of exceptionally high-power factors. In contrast, half-Heusler semiconductors have been shown to break through that barrier in a way that could not be explained. Here, we show that symmetry-protected orbital interactions can steer electron-acoustic phonon interactions towards high mobility. This high-mobility regime enables large power factors in half-Heuslers, well above the maximum measured values. We anticipate that our understanding will spark new routes to search for better thermoelectric materials, and to discover high electron mobility semiconductors for electronic and photonic applications.

Exploring Charge Transport in Guest Molecule Infiltrated Cu 3(BTC) 2 Metal Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonard, Francois Leonard; Stavila, Vitalie; Allendorf, Mark D.

2014-09-01

The goal of this Exploratory Express project was to expand the understanding of the physical properties of our recently discovered class of materials consisting of metal-organic frameworks with electroactive ‘guest’ molecules that together form an electrically conducting charge-transfer complex (molecule@MOF). Thin films of Cu 3(BTC) 2 were grown on fused silica using solution step-by-step growth and were infiltrated with the molecule tetracyanoquinodimethane (TCNQ). The infiltrated MOF films were extensively characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy, electrical conductivity, and thermoelectric properties. Thermopower measurements on TCNQ@Cu 3(BTC) 2 revealed a positive Seebeck coefficient of ~400 μV/k, indicating that holesmore » are the primary carriers in this material. The high value of the Seebeck coefficient and the expected low thermal conductivity suggest that molecule@MOF materials may be attractive for thermoelectric power conversion applications requiring low cost, solution-processable, and non-toxic active materials.« less

Ambient temperature thermoelectric performance of thermally evaporated p-type Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-04-01

Bismuth antimony telluride (BST) compounds have shown a promising performance in low to medium temperature thermoelectric (TE) conversion. One such composition, Bi1.2Sb0.8Te3, was synthesized by melting elemental entities and thin films of the as-synthesized material were deposited by thermal evaporation. X-Ray Diffraction analysis was conducted to study the crystallographic phases and other structural properties. Electrical conductivity and Seebeck coefficient measurements of as-prepared thin films were conducted in the temperature range from 303-363 K with a view to study ambient temperature application of the synthesized material for power generation in which an increasing trend was observed in the Seebeck coefficient. Electrical conductivity displayed a maximum value of 0.22 × 104 Sm-1 that was comparable to other Bi-Sb-Te compositions whereas power factor had its peak at 323 K. These trends observed in electrical properties indicate that synthesized material can be used for room temperature TE module fabrication.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

p × n-Type Transverse Thermoelectrics: A Novel Type of Thermal Management Material

NASA Astrophysics Data System (ADS)

Tang, Yang; Cui, Boya; Zhou, Chuanle; Grayson, Matthew

2015-06-01

In this paper we review the recently identified p × n-type transverse thermoelectrics and study the thermoelectric properties of the proposed candidate materials. Anisotropic electron and hole conductivity arise from either an artificially engineered band structure or from appropriately anisotropic crystals, and result in orthogonal p-type and n-type directional Seebeck coefficients, inducing a non-zero off-diagonal transverse Seebeck coefficient with appropriately oriented currents. Such materials have potential for new applications of thermoelectric materials in transverse Peltier cooling and transverse thermal energy harvesting. In this paper we review general transverse thermoelectric phenomena to identify advantages of p × n-type transverse thermoelectrics compared with previously studied transverse thermoelectric phenomena. An intuitive overview of the band structure of one such p × n-material, the InAs/GaSb type-II superlattice, is introduced, and the plot of thermoelectric performance as a function of superlattice structure is calculated, as an example of how band structures can be optimized for the best transverse thermoelectric performance.

Thermoelectric and phonon transport properties of two-dimensional IV-VI compounds.

PubMed

Shafique, Aamir; Shin, Young-Han

2017-03-30

We explore the thermoelectric and phonon transport properties of two-dimensional monochalcogenides (SnSe, SnS, GeSe, and GeS) using density functional theory combined with Boltzmann transport theory. We studied the electronic structures, Seebeck coefficients, electrical conductivities, lattice thermal conductivities, and figures of merit of these two-dimensional materials, which showed that the thermoelectric performance of monolayer of these compounds is improved in comparison compared to their bulk phases. High figures of merit (ZT) are predicted for SnSe (ZT = 2.63, 2.46), SnS (ZT = 1.75, 1.88), GeSe (ZT = 1.99, 1.73), and GeS (ZT = 1.85, 1.29) at 700 K along armchair and zigzag directions, respectively. Phonon dispersion calculations confirm the dynamical stability of these compounds. The calculated lattice thermal conductivities are low while the electrical conductivities and Seebeck coefficients are high. Thus, the properties of the monolayers show high potential toward thermoelectric applications.

Improving the Thermoelectric Properties of Polyaniline by Introducing Poly(3,4-ethylenedioxythiophene)

NASA Astrophysics Data System (ADS)

Wang, Xiao Yang; Liu, Cheng Yan; Miao, Lei; Gao, Jie; Chen, Yu

2016-03-01

By using the parent monomers, 3,4-ethylenedioxythiophene and aniline, a series of nanocomposites consisting of different mass ratios of polyaniline (PANI) to poly(3,4-ethylenedioxythiophene) (PEDOT) have been successfully prepared in hydrochloric acid solution through oxidative polymerization, then redoped with p-toluenesulfonic acid ( p-TSA). Firstly, PEDOT nanoparticles were fabricated via chemical oxidation polymerization in reverse (water-in-oil) microemulsions. Then, PANI-doped PEDOT nanoparticles were formed by oxidative polymerization of aniline to form PANI/PEDOT nanofibers. The resulting nanostructured components were characterized by scanning electron microscopy (SEM) and a series of spectroscopic methods. The presence of PEDOT increased the room-temperature electrical conductivity of the PANI/PEDOT nanocomposites by more than two orders of magnitude in comparison with the parent PANI. Moreover, the PANI/PEDOT nanocomposites showed better thermoelectric properties than PANI. Different concentrations of p-TSA also affected the electrical conductivity and Seebeck coefficient of the nanocomposites. With increasing temperature, both the electrical conductivity and Seebeck coefficient increased.

Enhanced Spin Conductance of a Thin-Film Insulating Antiferromagnet

NASA Astrophysics Data System (ADS)

Bender, Scott A.; Skarsvâg, Hans; Brataas, Arne; Duine, Rembert A.

2017-08-01

We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to spin biasing and a temperature gradient, we compute the spin transport through a normal-metal-antiferromagnet-normal-metal heterostructure. We show that the spin conductance diverges as one approaches the spin-flop transition; this enhancement of the conductance should be readily observable by sweeping the magnetic field across the spin-flop transition. The results from such experiments may, on the one hand, enhance our understanding of spin transport near a phase transition, and on the other be useful for applications that require a large degree of tunability of spin currents. In contrast, the spin Seebeck coefficient does not diverge at the spin-flop transition. Furthermore, the spin Seebeck coefficient is finite even at zero magnetic field, provided that the normal metal contacts break the symmetry between the antiferromagnetic sublattices.

Thermoelectric properties of FeAs based superconductors, with thick perovskite- and Sm-O fluorite-type blocking layers

NASA Astrophysics Data System (ADS)

Singh, S. J.; Shimoyama, J.; Ogino, H.; Kishio, K.

2015-11-01

The transport properties (electrical resistivity, Hall and Seebeck coefficient, and thermal conductivity) of iron based superconductors with thick perovskite-type oxide blocking layers and fluorine-doped SmFeAsO were studied to explore their possible potential for thermoelectric applications. The thermal conductivity of former compounds depicts the dominated role of phonon and its value decreases rapidly below the Tc, suggesting the addition of scattering of phonons. Both the Seebeck coefficient (S) and Hall coefficient (RH) of all samples were negative in the whole temperature region below 300 K, indicating that the major contribution to the normal state conductivity is by electrons. In addition, the profile of S(T) and RH(T) of all samples have similar behaviours as would be expected for a multi-band superconductors. Although the estimated thermoelectric figure of merit (ZT) of these compounds was much lower than that of practically applicable thermoelectric materials, however its improvement can be expected by optimizing microstructure of the polycrystalline materials, such as densification and grain orientation.

Thermoelectric Properties of Electron-Doped SrMnO3 Single Crystals with Perovskite Structure

NASA Astrophysics Data System (ADS)

Suzuki, T.; Sakai, H.; Taguchi, Y.; Tokura, Y.

2012-06-01

Thermoelectric properties have been investigated for single crystals of Sr(Mn1- x Mo x )O3 with the perovskite structure. Similar to (Sr1- x Ce x )MnO3, the Seebeck coefficient for lightly electron-doped compounds ( x ≤ 0.01) is enhanced upon G-type antiferromagnetic ordering, while maintaining metallic conduction. This results in enhancement of the figure of merit ( ZT). On the other hand, the Seebeck coefficient for the more electron-doped compound ( x = 0.025) changes sign from negative to positive within a spin and orbital ordered phase (with C-type antiferromagnetic configuration and Mn 3 z 2 - r 2 type orbital order) as the temperature is lowered, whereas the Hall coefficient remains negative in the whole temperature range. The enhancement of the ZT value in the G-type antiferromagnetic phase implies the possibility for improvement of the thermoelectric efficiency by using the coupling between charge, spin, orbital, and lattice degrees of freedom in strongly correlated electron systems.

Thermoelectric properties of the LaCoO3-LaCrO3 system using a high-throughput combinatorial approach

NASA Astrophysics Data System (ADS)

Talley, K. R.; Barron, S. C.; Nguyen, N.; Wong-Ng, W.; Martin, J.; Zhang, Y. L.; Song, X.

2017-02-01

A combinatorial film of the LaCo1-xCrxO3 system was fabricated using the LaCoO3 and LaCrO3 targets at the NIST Pulsed Laser Deposition (PLD) facility. As the ionic size of Cr3+ is greater than that of Co3+, the unit cell volume of the series increases with increasing x. Using a custom screening tool, the Seebeck coefficient of LaCo1-xCrxO3 approaches a measured maximum of 286 μV/K, near to the cobalt-rich end of the film library (with x ≈ 0.49). The resistivity value increases continuously with increasing x. The measured power factor, PF, of this series, which is related to the efficiency of energy conversion, also exhibits a maximum at the composition of x ≈ 0.49, which corresponds to the maximum value of the Seebeck coefficient. Our results illustrate the efficiency of applying the high-throughput combinatorial technique to study thermoelectric materials.

Electrical Transport Properties of Single-Crystalline β-Zn4Sb3 Prepared Through the Zn-Sn Mixed-Flux Method

NASA Astrophysics Data System (ADS)

Liu, Hongxia; Deng, Shuping; Shen, Lanxian; Wang, Jinsong; Feng, Cheng; Deng, Shukang

2017-03-01

β-Zn4Sb3 is a promising p-type thermoelectric material for utilization in moderate temperatures. This study prepares a group of single-crystalline β-Zn4Sb3 samples using the Zn-Sn mixed-flux method based on the stoichiometric ratios of Zn4+ x Sb3Sn y . The effect of Zn-to-Sn proportion in the flux on the structure and electrical transport properties is investigated. All samples are strip-shaped single crystals of different sizes. The actual Zn content of the present samples is improved (>3.9) compared with that of the samples prepared through the Sn flux method. Larger lattice parameters are also obtained. The carrier concentration of all the samples is in the order of over 1019 cm-3. With increasing Sn rate in the flux, this carrier concentration decreases, whereas mobility is significantly enhanced. The electrical conductivity and Seebeck coefficients of all the samples exhibit a behavior that of a degenerate semiconductor transport. Electrical conductivity initially increases and then decreases as the Sn ratio in the flux increases. The electrical conductivity of the x: y = 5:1 sample reaches 6.45 × 104 S m-1 at 300 K. Benefitting from the electrical conductivity and Seebeck coefficient, the flux proportion of the x: y = 7:1 sample finally achieves the highest power factor value of 1.4 × 10-3 W m-1 K-2 at 598 K.

Theoretical Study of Electronic Structure and Thermoelectric Properties of Doped CuAlO2

NASA Astrophysics Data System (ADS)

Poopanya, P.; Yangthaisong, A.; Rattanapun, C.; Wichainchai, A.

2011-05-01

The doping level dependence of thermoelectric properties of delafossite CuAlO2 has been investigated in the constant scattering time ( τ) approximation, starting from the first principles of electronic structure. In particular, the lattice parameters and the energy band structure were calculated using the total energy plane-wave pseudopotential method. It was found that the lattice parameters of CuAlO2 are a = 2.802 Å and c = 16.704 Å, and the internal parameter is u = 0.1097. CuAlO2 has an indirect band gap of 2.17 eV and a direct gap of 3.31 eV. The calculated energy band structures were then used to calculate the electrical transport coefficients of CuAlO2. By considering the effects of doping level and temperature, it was found that the Seebeck coefficient S( T) increases with increasing acceptor doping ( A d) level. The values of S( T) in our experiments correspond to an A d level at 0.262 eV, which is identified as the Fermi level of CuAlO2. Based on our experimental Seebeck coefficient and the electrical conductivity, the constant relaxation time is estimated to be 1 × 10-16 s. The power factor is large for a low A d level and increases with temperature. It is suggested that delafossite CuAlO2 can be considered as a promising thermoelectric oxide material at high doping and high temperature.

Remarkable enhancement in thermoelectric performance of BiCuSeO through biaxial strain modulation

NASA Astrophysics Data System (ADS)

Li, Chunhong; Guo, Donglin; Li, Kejian; Shao, Bin; Chen, Dengming; Ma, Yilong; Sun, Jianchun

2018-03-01

We propose to further enhance the thermoelectric performance of BiCuSeO using the biaxial strain. The effect of biaxial strain on the thermoelectric property of BiCuSeO is investigated by using the first-principles calculations combined with the Semiclaasical Boltzmann theory. When the biaxial strain is applied, the Seebeck coefficient is largely enhanced by tensile strain, while the electrical conductivity can be greatly enhanced by compressive strain. The largest zT value of 1.7 at 900 K is then conservatively estimated by using the experimental thermal conductivity, which is 4 times larger than that without biaxial strain. Our results indicate that the biaxial strain could be an effect method to enhance the thermoelectric performance of BiCuSeO.

Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)V4S8

NASA Astrophysics Data System (ADS)

Naik, I.

2018-01-01

Polycrystalline V4-cluster compounds of GaV4S8 and its derivatives Ga0.90 Cu0.10V4S8 and Ga0.90Cu0.20V4S8 have been prepared at 800°C by solid-state reaction method. Although the cubic-rhombohedral phase transformation at 45 K was found to be absent in the derivatives of GaV4S8, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in GaV4S8, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling.

K1.33Mn8O16 as an electrocatalyst and a cathode

NASA Astrophysics Data System (ADS)

Jalili, Seifollah; Moharramzadeh Goliaei, Elham; Schofield, Jeremy

2017-02-01

Density functional theory (DFT) calculations are carried out to investigate the electronic, magnetic and thermoelectric properties of bulk and nanosheet K1.33Mn8O16 materials. The catalytic activity and cathodic performance of bulk and nanosheet structures are examined using the Tran-Blaha modified Becke-Johnson (TB-mBJ) exchange potential. Electronic structure calculations reveal an anti-ferromagnetic ground state, with a TB-mMBJ band gap in bulk K1.33Mn8O16 that is in agreement with experimental results. Density of state plots indicate a partial reduction of Mn4+ ions to Mn3+, without any obvious sign of Jahn-Teller distortion. Moreover, use of the O p-band center as a descriptor of catalytic activity suggests that the nanosheet has enhanced catalytic activity compared to the bulk structure. Thermoelectric parameters such as the Seebeck coefficient, electrical conductivity, and thermal conductivity are also calculated, and it is found that the Seebeck coefficients decrease with increasing temperature. High Seebeck coefficients for both spin-up and spin-down states are found in the nanosheet relative to their value in the bulk K1.33Mn8O16 structure, whereas the electrical and thermal conductivity are reduced relative to the bulk. In addition, figures of merit values are calculated as a function of the chemical potential and it is found that the nanosheet has a figure of merit of 1 at room temperature, compared to 0.5 for the bulk material. All results suggest that K1.33Mn8O16 nanosheets can be used both as a material in waste heat recovery and as an electrocatalyst in fuel cells and batteries.

The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Li Bin; Ye, Lingyun; Wang, Yuan Xu, E-mail: wangyx@henu.edu.cn

2015-12-21

The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys),more » which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.« less

Anomalous thermoelectricity in strained Bi2Te3 films.

PubMed

Liu, Yucong; Chen, Jiadong; Deng, Huiyong; Hu, Gujin; Zhu, Daming; Dai, Ning

2016-09-07

Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization.

Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

NASA Astrophysics Data System (ADS)

Liu, Chang; Morelli, Donald T.

2011-05-01

Copper aluminum oxide (CuAlO2) is considered as a potential candidate for thermoelectric applications. Partially magnesium-doped CuAlO2 bulk pellets were fabricated using solid-state reactions, hot-pressing, and pulsed electric current sintering (PECS) techniques. X-ray diffraction and scanning electron microscopy were adopted for structural analysis. High-temperature transport property measurements were performed on hot-pressed samples. Electrical conductivity increased with Mg doping before secondary phases became significant, while the Seebeck coefficient displayed the opposite trend. Thermal conductivity was consistently reduced as the Mg concentration increased. Effects of Mg doping, preparation conditions, and future modification on this material's properties are discussed.

Thermoelectronic transport through spin-crossover single molecule Fe[(H2Bpz2)2bipy

NASA Astrophysics Data System (ADS)

Liu, N.; Zhu, L.; Yao, K. L.

2018-04-01

By means of density functional theory combined with the method of Keldysh nonequilibrium Green’s function, the thermal transport properties of high- and low-spin states of mononuclear FeII molecules with spin-crossover characteristics are studied. It is found that the high-spin molecular junction has a larger current than the low-spin one, producing thermally-induced switching effect. Furthermore, for high spin state molecule, the spin-up thermo-current is strongly blocked, thus achieving a pure thermo spin current. The enhanced Seebeck coefficient and the figure of merit value of high-spin state indicate that it is an ideal candidate for thermoelectric applications.

Pure detection of the acoustic spin pumping in Pt/YIG/PZT structures

NASA Astrophysics Data System (ADS)

Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Saitoh, Eiji

2014-11-01

The acoustic spin pumping (ASP) stands for the generation of a spin voltage from sound waves in a ferromagnet/paramagnet junction. In this letter, we propose and demonstrate a method for pure detection of the ASP, which enables the separation of sound-wave-driven spin currents from the spin Seebeck effect due to the heating of a sample caused by a sound-wave injection. Our demonstration using a Pt/YIG/PZT sample shows that the ASP signal in this structure measured by a conventional method is considerably offset by the heating signal and that the pure ASP signal is one order of magnitude greater than that reported in the previous study.

The synthesis of CaZn2Sb2 and its thermoelectric properties

NASA Technical Reports Server (NTRS)

Snyder, J.; Starkll, D.

2002-01-01

CaZn2Sb2 was prepared and examined for use as a hightemperature thermoelectric material. It has a high Seebeck coefficient and high electrical conductivity-comparable to B-Zn4Sb3. These two properties are vital in determining the ability of the compound to change heat into electricity isentropically.

Thermoelectric Materials Development for Low Temperature Geothermal Power Generation

DOE Data Explorer

Tim Hansen

2016-01-29

Data includes characterization results for novel thermoelectric materials developed specifically for power generation from low temperature geothermal brines. Materials characterization data includes material density, thickness, resistance, Seebeck coefficient. This research was carried out by Novus Energy Partners in Cooperation with Southern Research Institute for a Department of Energy Sponsored Project.

Dual Vacancies: An Effective Strategy Realizing Synergistic Optimization of Thermoelectric Property in BiCuSeO.

PubMed

Li, Zhou; Xiao, Chong; Fan, Shaojuan; Deng, Yu; Zhang, Wenshuai; Ye, Bangjiao; Xie, Yi

2015-05-27

Vacancy is a very important class of phonon scattering center to reduce thermal conductivity for the development of high efficient thermoelectric materials. However, conventional monovacancy may also act as an electron or hole acceptor, thereby modifying the electrical transport properties and even worsening the thermoelectric performance. This issue urges us to create new types of vacancies that scatter phonons effectively while not deteriorating the electrical transport. Herein, taking BiCuSeO as an example, we first reported the successful synergistic optimization of electrical and thermal parameters through Bi/Cu dual vacancies. As expected, as compared to its pristine and monovacancy samples, these dual vacancies further increase the phonon scattering, which results in an ultra low thermal conductivity of 0.37 W m(-1) K(-1) at 750 K. Most importantly, the clear-cut evidence in positron annihilation unambiguously confirms the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant increase of electrical conductivity with relatively high Seebeck coefficient. As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 750 K, which is superior to that of its native sample and monovacancies-dominant counterparts. These findings undoubtedly elucidate a new strategy and direction for rational design of high performance thermoelectric materials.

Ab initio study of the strain dependence of thermopower in electron-doped SrTiO3

NASA Astrophysics Data System (ADS)

Fumega, Adolfo O.; Pardo, Victor

2017-02-01

In this paper we explore the different mechanisms that affect the thermopower of a band insulating perovskite (in this case, SrTiO3) when subject to strain (both compressive or tensile). We analyze the high temperature, entropy-dominated limit and the lower temperature, energy-transport regime. We observe that the effect of strain in the high-temperature Seebeck coefficient is small at the concentration levels of interest for thermoelectric applications. However, the effective mass changes substantially with strain, which produces an opposite effect to that of the degeneracy breakups brought about by strain. In particular, we find that the thermopower can be enhanced by applying tensile strain in the adequate regime. We conclude that the detrimental effect of strain in thermopower due to band splitting is a minor effect that will not hamper the optimization of the thermoelectric properties of oxides with t 2g -active bands by applying strain.

Ab initio study of the strain dependence of thermopower in electron-doped SrTiO3.

PubMed

Fumega, Adolfo O; Pardo, Victor

2017-02-15

In this paper we explore the different mechanisms that affect the thermopower of a band insulating perovskite (in this case, SrTiO 3 ) when subject to strain (both compressive or tensile). We analyze the high temperature, entropy-dominated limit and the lower temperature, energy-transport regime. We observe that the effect of strain in the high-temperature Seebeck coefficient is small at the concentration levels of interest for thermoelectric applications. However, the effective mass changes substantially with strain, which produces an opposite effect to that of the degeneracy breakups brought about by strain. In particular, we find that the thermopower can be enhanced by applying tensile strain in the adequate regime. We conclude that the detrimental effect of strain in thermopower due to band splitting is a minor effect that will not hamper the optimization of the thermoelectric properties of oxides with t 2g -active bands by applying strain.

Enhanced performance of dye-sensitized solar cell using Bi2Te3 nanotube/ZnO nanoparticle composite photoanode by the synergistic effect of photovoltaic and thermoelectric conversion

NASA Astrophysics Data System (ADS)

Dou, Yuanyao; Wu, Fang; Fang, Liang; Liu, Gaobin; Mao, Caiying; Wan, Kai; Zhou, Miao

2016-03-01

Ultralong and highly crystalline rhombohedral Bi2Te3 nanotubes were fabricated by a two-step solution phase reaction. A novel photoanode architecture has been fabricated by embedding 0-2.5 wt.% Bi2Te3 nanotubes into ZnO nanoparticles. The photocurrent density-voltage (J-V) characteristics reveal that the dye sensitized solar cells (DSSCs) with Bi2Te3/ZnO composite photoanode exhibit significantly enhanced photovoltaic performance. Notably, the DSSC incorporating 1.5 wt.% Bi2Te3 in the ZnO photoanode demonstrates an energy conversion efficiency (η) of 4.27%, which is 44.3% higher than that of the bare ZnO photoanode. The electrochemical impedance spectroscopy (EIS) analysis shows that the Bi2Te3 nanotubes can provide a direct pathway for electron transportation, prolong the lifetime of electrons, suppress the charge recombination and improve the electron collection efficiency. The thermoelectric effect analysis indicates that with the increase of irradiation time, Bi2Te3/ZnO composite photoanode could convert both heat and photon energies to electrical energy simultaneously and slow down the decline of η. The calculated electron density (ns) further proves that the increment of short-circuit current density (Jsc) is attributed to Seebeck effect in the composite photoanode. These results suggest that compositing 1D thermoelectric nano-materials in photoanode is a promising route to improve the performance of DSSCs.

Our Roads, A Large Thermoelectric Generator

NASA Astrophysics Data System (ADS)

Weiss, I.

2017-12-01

If asphalt can heat up from the solar radiation shining onto it directly, then it will be able to heat water in pipes within the pavement. The heat from the warm water can then be harvested into usable electrical energy, because heat energy can be transformed into electrical energy using the Seebeck Effect. The Seebeck Effect is when a temperature difference causes electrons to move away from the heat, creating an electrical charge. My experiment showed my research-based hypothesis correct. I hypothesized that if asphalt can heat up from the solar radiation shining onto it directly, then it would be able to warm a water system and usable energy could be harvested, because heat energy can be transformed into electrical energy. Asphalt pavement does not reflect the sunlight and hence heats up faster than a light surface that would reflect the sunlight. This means the asphalt absorbs the sunlight and gives off heat, which is wasted energy. By turning heat energy into electricity, cities can provide a source of clean, green energy and reduce their reliance on fossil fuels. The heat given off by asphalt increases the temperature of the air around, contributing to what is known as the urban heat island effect. This heating contributes to the formation of smog and ozone depletion. With the population still growing this would mean increasing city sizes, greater heat island effect and hence an increase in smog and ozone depletion. By harvesting the heat energy in the pavement through my setup, cities can not only create green energy but also reduce the heat radiated from pavement. Converting my system to a neighborhood street would produce higher output. My street measures 800 feet long by 35 feet wide. That gives us 28,000 square feet. At the rate of 5 volts per minute for a 2 square foot area, my street would be able to produce 70,000 volts per minute.

Dynamic generation of spin-wave currents in hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyapilin, I. I.; Okorokov, M. S., E-mail: Okorokovmike@gmail.com

2016-11-15

Spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure is studied by the nonequilibrium statistical operator method under conditions of the spin Seebeck effect. The effective parameter approach in which each examined subsystem (conduction electrons, magnons, phonons) is characterized by its specific effective temperature is considered. The effect of the resonant (electric dipole) excitation of the spin electronic subsystem of conduction electrons on spin-wave current excitation in a ferromagnetic insulator is considered. The macroscopic equations describing the spin-wave current caused by both resonant excitation of the spin system of conduction electrons and the presence of a nonuniform temperaturemore » field in the ferromagnetic insulator are derived taking into account both the resonance-diffusion propagation of magnons and their relaxation processes. It is shown that spin-wave current excitation is also of resonant nature under the given conditions.« less

Tuning Thermoelectric Properties of Type I Clathrate K 8–x Ba x Al 8+x Si 38–x through Barium Substitution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sui, Fan; Kauzlarich, Susan M.

2016-05-10

The thermal stability and thermoelectric properties of type I clathrate K8Al8Si38 up to 873 K are reported. K8Al8Si38 possesses a high absolute Seebeck coefficient value and high electrical resistivity in the temperature range of 323 to 873 K, which is consistent with previously reported low temperature thermoelectric properties. Samples with Ba partial substitution at the K guest atom sites were synthesized from metal hydride precursors. The samples with the nominal chemical formula of K8–xBaxAl8+xSi38–x (x = 1, 1.5, 2) possess type I clathrate structure (cubic, Pm3n), confirmed by X-ray diffraction. The guest atom site occupancies and thermal motions were investigatedmore » with Rietveld refinement of synchrotron powder X-ray diffraction. Transport properties of Ba-containing samples were characterized from 2 to 300 K. The K–Ba alloy phases showed low thermal conductivity and improved electrical conductivity compared to K8Al8Si38. Electrical resistivity and Seebeck coefficients were measured over the temperature range of 323 to 873 K. Thermal conductivity from 323 to 873 K was estimated from the Wiedemann–Franz relation and lattice thermal conductivity extrapolation from 300 to 873 K. K8–xBaxAl8+xSi38–x (x = 1, 1.5) synthesized with Al deficiency showed enhanced electrical conductivity, and the absolute Seebeck coefficients decrease with the increased carrier concentration. When x = 2, the Al content increases toward the electron balanced composition, and the electrical resistivity increases with the decreasing charge carrier concentration. Overall, K6.5Ba1.5Al9Si37 achieves an enhanced zT of 0.4 at 873 K.« less

HPHT synthesis, structure and electrical properties of type-I clathrates Ba{sub 8}Al{sub x}Si{sub 46−x}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Binwu; Jia, Xiaopeng; Sun, Hairui

2016-01-15

Clathrate compounds Ba{sub 8}Al{sub x}Si{sub 46−x} were successfully synthesized using the method of high-pressure and high-temperature (HPHT). In this process, we used BaSi{sub 2} as one of the starting materials in place of Ba metals, which reduces the complexity of the program caused by the extremely high chemical reactivity. By using this method, the processing time was reduced from few days to an hour. X-ray diffraction and structural refinement indicated this composition crystallized in type-I clathrate phase. Bond length analysis showed the Ba atoms in small dodecahedron had spherical thermal ellipsoids while those in large tetrakaidecahedron displayed anisotropic thermal ellipsoids.more » The negative Seebeck coefficient indicated transport processes were dominated by electrons as carriers, and increased with the increasing temperature. The electrical properties, including Seebeck coefficient and Power factor, were greatly enhanced by Al substitution. - Graphical abstract: Left: The cavity structure diagram of a China-type large volume cubic high-pressure apparatus, and the Type-I clathrate structure of sample synthesized using HPHT. Middle: X-ray Rietveld refinement profile for Ba{sub 8}Si{sub 46} and element mapping for Ba{sub 8}Al{sub 16}Si{sub 30}. Right: Temperature dependence of Seebeck coefficient for Ba{sub 8}Al{sub x}Si{sub 46−x} prepared by HPHT. - Highlights: • HPHT is a simple and rapid synthetic approach. • We use BaSi{sub 2} as one of the starting materials replacing Ba metals. • The processing time reduces from few days to an hour. • Structure determination is refined by Rietveld analysis of XRD data. • Variable temperature electrical properties are characterized.« less

Electrodeposition of zinc antimony alloy thermoelectric materials

NASA Astrophysics Data System (ADS)

Hairin, A. L. N.; Romainor, M. N.; Othman, R.; Daud, F. D. M.

2018-01-01

Zinc antimonite, Zn4Sb3 is a promising thermoelectric material because of its high thermoelectric performance and abundance of Zn and Sb in nature. Thus, in this study, samples of Zn-Sb alloy were prepared using electrodeposition method because of its simple experimental set-up, which also carried out in the room temperature. From the XRD results, all samples deposited exhibit Zn-Sb alloy compositions. The best results were S1 and S3 as they had dominant peaks that showed the crystal lattice of Zn4Sb3. From the SEM images, the surface morphology of Zn-Sb alloy deposited samples showed were all-irregular, course and rough structures. While, the atoms arrangement of the deposited samples were all flowery-like. Based on physical properties characterization, the best samples; S1 (0.1M ZnCl2-0.1M SbCl3, 100mA, 120min) and S3 (0.1M ZnCl2-0.1M SbCl3, 50mA, 120min), were selected and investigated their thermoelectric performances; electrical conductivity and Seebeck coefficient, to determine their power factor, PF. Heat capacity of the samples was also examined to relate it with thermal conductivity of Zn-Sb deposited samples. For thermoelectric performance, S1 obtained power factor of 1.37x10-7V/K. Ω.cm at 102°C with the Seebeck coefficient of 181μV/K. While as for S3, the power factor was 1.58x10-7V/K. Ω.cm with Seebeck coefficient of 113μV/K at 101°C. From DSC analysis, it showed that S3 obtained higher Cp than S1. Cp for S3 was 46.8093mJ/°C while S1 was 38.3722mJ/°C.

Thermoelectric Properties of Bi Doped Tetrahedrite

NASA Astrophysics Data System (ADS)

Prem Kumar, D. S.; Chetty, R.; Femi, O. E.; Chattopadhyay, K.; Malar, P.; Mallik, R. C.

2017-05-01

Bi doped tetrahedrites with nominal compositions of Cu12Sb4- x Bi x S13 ( x = 0, 0.2, 0.4, 0.6, 0.8) were synthesized by the solid state reaction method. Powder x-ray diffraction patterns confirmed that Cu12Sb4S13 (tetrahedrite structure) was the main phase, along with Cu3SbS4 and Cu3SbS3 as the secondary phases. Electron probe microanalysis provided the elemental composition of all the samples. It was confirmed that the main phase is the tetrahedrite phase with slight deviations in the stoichiometry. All the transport properties were measured between 423 K and 673 K. The electrical resistivity increased with an increase in Bi content for all the samples, possibly induced by the variation in the carrier concentration, which may be due to the influence of impurity phases. The increase in electrical resistivity with an increase in temperature indicates the degenerate semiconducting nature of the samples. The absolute Seebeck coefficient is positive throughout the temperature range indicating the p-type nature of the samples. The Seebeck coefficient for all the samples increased with an increase in Bi content as electrical resistivity. The variation of electrical resistivity and the Seebeck coefficient with doping can be attributed to the changes in the carrier concentration of the samples. The total thermal conductivity increases with an increase in temperature and decreases with an increase in the Bi content that could be due to the reduction in carrier thermal conductivity. The highest thermoelectric figure of merit ( zT) 0.84 at 673 K was obtained for the sample with x = 0.2 due to lower thermal conductivity (1.17 W/m K).

Thermoelectric Figures of Merit of Zn4Sb3 and Zrnisn-based Half-heusler Compounds Influenced by Mev Ion-beam Bombardments

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Muntele, C. I.; Ila, D.

Semiconducting β-Zn4Sb3 and ZrNiSn-based half-Heusler compound thin films with applications as thermoelectric (TE) materials were prepared using ion beam assisted deposition (IBAD). High-purity solid zinc (Zn) and antimony (Sb) were evaporated by electron beam to grow the β-Zn4Sb3 thin film while high-purity zirconium (Zr) powder and nickel (Ni) tin (Sn) powders were evaporated by electron beam to grow the ZrNiSn-based half-Heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardment for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardment. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam couldcause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ω-method (3rd harmonic) measurement system to measure the cross-plane thermal conductivity, the van der Pauw measurement system to measure the electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

Thermoelectric Properties of the Ca1- x R x MnO3 Perovskite System (R: Pr, Nd, Sm) for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Choi, Soon-Mok; Lim, Chang-Hyun; Seo, Won-Seon

2011-05-01

Perovskite oxides have attracted considerable attention in the area of thermoelectrics owing to the advantages of their isotropic crystal structure and straightforward control of their electrical properties. Among the many perovskites, different types of polycrystalline Ca1- x R x MnO3 (R: Pr, Nd, Sm) were prepared by solid-state reaction in this study. Three different rare-earth dopants were substituted at the Ca-ion site at various amounts. Considering phase stability, rare-earth ions with nearly the same ionic radius as Ca2+ were selected. To assess thermoelectric performance, the electrical conductivity, Seebeck coefficient, and power factor were measured, and phase analysis was conducted. The effects of ionic radius variation on single phase formation and the effect of doping amount on carrier concentration are discussed.

Thermoelectric properties of nano-granular indium-tin-oxide within modified electron filtering model with chemisorption-type potential barriers

NASA Astrophysics Data System (ADS)

Brinzari, V.; Nika, D. L.; Damaskin, I.; Cho, B. K.; Korotcenkov, G.

2016-07-01

In this work, an approach to the numerical study of the thermoelectric parameters of nanoscale indium tin oxide (ITO, Sn content<10 at%) based on an electron filtering model (EFM) was developed. Potential barriers at grain boundaries were assumed to be responsible for a filtering effect. In the case of the dominant inelastic scattering of electrons, the maximal distance between potential barriers was limited in this modified model. The algorithm for such characteristic length calculation was proposed, and its value was evaluated for ITO. In addition, the contributions of different scattering mechanisms (SMs) in electron transport were examined. It was confirmed that in bulk ITO, the scattering on polar optical phonons (POPs) and ionized impurities dominates, limiting electron transport. In the framework of the filtering model, the basic thermoelectric parameters (i.e., electrical conductivity, mobility, Seebeck coefficient, and power factor (PF)) were calculated for ITO in the temperature range of 100-500 °C as a function of potential barrier height. The results demonstrated a sufficient rise of the Seebeck coefficient with an increase in barrier height and specific behavior of PF. It was found that PF is very sensitive to barrier height, and at its optimal value for granular ITO, it may exceed the PF for bulk ITO by 3-5 times. The PF maximum was achieved by band bending, slightly exceeding Fermi energy. The nature of surface potential barriers in nano-granular ITO with specific grains is due to the oxygen chemisorption effect, and this can be observed despite of the degeneracy of the conduction band (CB). This hypothesis and the corresponding calculations are in good agreement with recent experimental studies [Brinzari et al. Thin Solid Films 552 (2014) 225].

Influence of convection at outer ceramic surfaces on the characterization of thermoelectric modules by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Beltrán-Pitarch, Braulio; García-Cañadas, Jorge

2018-02-01

Impedance spectroscopy is a useful method for the characterization of thermoelectric (TE) modules. It can determine with high accuracy the module's dimensionless figure of merit (zT) as well as the average TE properties of the module's thermoelements. Interpretation of impedance results requires the use of a theoretical model (equivalent circuit), which provides the desired device parameters after a fitting is performed to the experimental results. Here, we extend the currently available equivalent circuit, only valid for adiabatic conditions, to account for the effect of convection at the outer surface of the module ceramic plates, which is the part of the device where convection is more prominent. This is performed by solving the heat equation in the frequency domain including convection heat losses. As a result, a new element (convection resistance) appears in the developed equivalent circuit, which starts to influence at mid-low frequencies, causing a decrease of the typically observed semicircle in the impedance spectrum. If this effect is not taken into account, an underestimation of the zT occurs when measurements are performed under room conditions. The theoretical model is validated by experimental measurements performed in a commercial module with and without vacuum. Interestingly, the use of the new equivalent circuit allows the determination of the convection heat transfer coefficient (h), if the module's Seebeck coefficient is known, and an impedance measurement in vacuum is performed, opening up the possibility to develop TE modules as h sensors. On the other hand, if h is known, all the properties of the module (zT, ohmic (internal) resistance, average Seebeck coefficient and average thermal conductivity of the thermoelements and thermal conductivity of the ceramics) can be obtained from one impedance measurement in vacuum and another measurement under room conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nieroda, Pawel; Zybala, Rafal; Wojciechowski, Krzysztof T.

The aim of the study was to develop a fast and simple method for preparation of polycrystalline Mg{sub 2}Si. For this purpose a Spark Plasma Sintering (SPS) method was used and synthesis conditions were adjusted in such a manner that no excess Mg was required. Materials were synthesized by the direct reaction of Mg and Si raw powders. To determine the phase and chemical composition, the fabricated samples were studied by X-ray diffraction and SEM microscopy coupled with EDX chemical analysis. Thermoelectric properties of samples (thermal conductivity, electrical conductivity and Seebeck coefficient) were measured all over temperature range of 300-650more » K. The analysis by the scanning thermoelectric microprobe (STM) shows that samples have uniform distribution of Seebeck coefficient with mean value of about -405 {mu}VK{sup -1} and standard deviation of 94 {mu}VK{sup -1}. Prepared materials have intrinsic band gap of 0.45 eV and thermal conductivity {lambda}= 7.5 Wm{sup -1}K{sup -1} at room temperature.« less

Improved thermoelectric power output from multilayered polyethylenimine doped carbon nanotube based organic composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hewitt, Corey A.; Montgomery, David S.; Barbalace, Ryan L.

2014-05-14

By appropriately selecting the carbon nanotube type and n-type dopant for the conduction layers in a multilayered carbon nanotube composite, the total device thermoelectric power output can be increased significantly. The particular materials chosen in this study were raw single walled carbon nanotubes for the p-type layers and polyethylenimine doped single walled carbon nanotubes for the n-type layers. The combination of these two conduction layers leads to a single thermocouple Seebeck coefficient of 96 ± 4 μVK{sup −1}, which is 6.3 times higher than that previously reported. This improved Seebeck coefficient leads to a total power output of 14.7 nW permore » thermocouple at the maximum temperature difference of 50 K, which is 44 times the power output per thermocouple for the previously reported results. Ultimately, these thermoelectric power output improvements help to increase the potential use of these lightweight, flexible, and durable organic multilayered carbon nanotube based thermoelectric modules in low powered electronics applications, where waste heat is available.« less

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

NASA Astrophysics Data System (ADS)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Erdong; Li, Qiming; Swartzentruber, Brian

2015-11-25

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

NASA Astrophysics Data System (ADS)

Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

2018-06-01

Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 < x < 0.6. The compositional dependence of the thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

Electrical conduction and thermoelectric properties of perovskite-type BaBi1-xSbxO3

NASA Astrophysics Data System (ADS)

Yasukawa, Masahiro; Shiga, Yuta; Kono, Toshio

2012-06-01

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi1-xSbxO3 solid solutions with x=0.0-0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb5+ and replace Bi5+, reducing 6s holes conduction from Bi5+(6s0) to Bi3+ (6s2). The thermoelectric power factor S2σ has values of 6×10-8-3×10-5 W m-1 K-2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO3-δ, but decreases upon Sb doping due to the decreased σ values.

Dependence of electrical transport properties of CaO(CaMnO3)m (m = 1, 2, 3, ∞) thermoelectric oxides on lattice periodicity

NASA Astrophysics Data System (ADS)

Baranovskiy, Andrei; Amouyal, Yaron

2017-02-01

The electrical transport properties of CaO(CaMnO3)m (m = 1, 2, 3, ∞) compounds are studied applying the density functional theory (DFT) in terms of band structure at the vicinity of the Fermi level (EF). It is shown that the total density of states (DOS) values at EF increase with increase in the m-values, which implies an increase in the electrical conductivity, σ, with increasing m-values, in full accordance with experimental results. Additionally, the calculated values of the relative slopes of the DOS at EF correlate with the experimentally measured Seebeck coefficients. The electrical conductivity and Seebeck coefficients were calculated in the framework of the Boltzmann transport theory applying the constant relaxation time approximation. By the analysis of experimental and calculated σ(Τ) dependences, the electronic relaxation time and mean free path values were estimated. It is shown that the electrical transport is dominated by electron scattering on the boundaries between perovskite (CaMnO3) and Ca oxide (CaO) layers inside the crystal lattice.

Thermoelectric Properties of Complex Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Cain, Tyler Andrew

Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.

PubMed

Trung, Nguyen Huu; Sakamoto, Kei; Toan, Nguyen Van; Ono, Takahito

2017-02-10

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi₂Te₃ and 500-µm-thick Sb₂Te₃ films are obtained. The Seebeck coefficients for the Bi₂Te₃ and Sb₂Te₃ films are -150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi₂Te₃ is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb₂Te₃. The power factors of each thermoelectric material can reach 15 × 10 -4 W/mK² for Bi₂Te₃ and 11.2 × 10 -4 W/mK² for Sb₂Te₃.

Synthesis and properties of nanocrystalline Bi-Te based thermoelectric materials for energy application

NASA Astrophysics Data System (ADS)

Almohaimeed, Sulaiman

Thermoelectric phenomenon is the science associated with converting thermal energy into electricity based on the Seebeck effect. Bismuth telluride Bi 2Te3 is currently considered to be the state-of-the art thermoelectric material with high efficiency for low temperature applications and is therefore attractive for energy harvesting processes. Nanostructures thermoelectric materials provide a novel way to enhance thermoelectric properties and are considered to be the efficient building blocks for thermoelectric devices. In this work, n- and p-type bulk nanocrystalline Bismuth telluride thermoelectric materials were prepared by mechanical alloying / ball milling technique. The produced nano-crystalline powder were then consolidated using hot compaction under inert atmosphere. The novel processing of these materials maintained the nanostructure in both n- and p-type. Structural properties of the n- and p-types were characterized using X ray diffraction, scanning electron microscopy and transmission electron microscope. These techniques proved that the average grian size of the milled thermoelectric materials was about 20 nm. Accordingly, a Significant improvement in the figure of merit (ZT) is achieved through significant lattice thermal conductivity reduction and Seebeck coefficient improvement. The maximum ZT value for the n-type nanocrystalline thermoelectric was 1.67 at 373 K while the maximum ZT value for the p-type was 1.78 at the same temperature. These values are considered to be the highest values reported for similar materials. Evaluation of the mechanical properties was also performed through microhardness measurement using Vickers micro-hardness test, which shows an enhancement in mechanical properties for the produced materials.

The enhanced thermoelectric properties of BiMnO3 ceramics by Sr-doped

NASA Astrophysics Data System (ADS)

Yu, X. Y.; Wang, Y.; Peng, J. J.; Wang, B. L.; Wei, K. L.; Liu, J. M.; He, Q. Y.

2018-04-01

A series of Bi1‑xSrxMnO3 (x = 0.40, 0.45, 0.50, 0.55) samples labeled as BSMO040, BSMO045, BSMO050, and BSMO055, respectively, have been fabricated by the modified solid-state reaction method. The crystal structural, microstructures, and chemical states of the elements and the thermoelectric properties were investigated with respect to the partial substitution of Sr2+ for Bi3+. The samples were characterized by x-ray diffraction (XRD) at 723 K, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS). Moreover, their electrical conductivities (σ), Seebeck coefficients (S), and thermal conductivities (κ) were determined. All the samples exhibited orthorhombic structure. The partial substitution of Sr2+ for Bi3+ caused valence shift of some Mn ions from +3 to +4 to maintain electric charge balance. The change in electric charge led to an increase in electron concentration, and thus, the electrical conductivity as well as the absolute value of Seebeck coefficient increased. Consequently, the power factor also increased. The highest power factor (0.3 × 10‑4 Wm‑1 K‑1) was obtained for BSMO055 at 1023 K. Moreover, the highest dimensionless figure-of-merit (ZT) obtained in this study was 0.015 for BSMO055 at 1073 K. It can be concluded that the partial substitution of Sr2+ for Bi3+ in the Bi1‑xSrxMnO3 samples (x = 0.40, 0.45, 0.50, and 0.55) improved the thermoelectric properties effectively.

Thermoelectric Properties of Poly(selenophene- co-3, 4-ethylenedioxythiophene) via Electropolymerization

NASA Astrophysics Data System (ADS)

Gu, Hua; Ming, Shouli; Lin, Kaiwen; Liu, Hongtao; Chen, Shuai; Lu, Baoyang; Xu, Jingkun

2017-05-01

Conducting polymers as thermoelectric (TE) materials have drawn extensive attention most recently because they are intrinsically light weight, flexible, highly processable, abundant in nature, and have especially low thermal conductivity. Relative studies have been focused on several typical structures such as polyacetylene, polyaniline, polythiophenes. However, TE performance of polyselenophenes have drawn very little attention because of its unstability and difficulty in synthesis. Previously, our group demonstrated that polyselenophene revealed high Seebeck coefficient (>180 μV K-1), but their electrical conductivity was very low (typically 10-5-10-2 S cm-1). For the sake of improving the thermoelectric performance of polyselenophene, the simplest and most effective method is to copolymerize with other high-performance thermoelectric materials. Herein, 3,4-ethylenedioxythiophene (EDOT), the monomer precursor of poly(3,4-ethylenedioxythiophene) (probably the best organic thermoelectric materials so far) was chosen to copolymerize with selenophene (SE) under different feeding ratios via electropolymerization to improve the thermoelectric performance. It is found that the electrical conductivity of all the copolymer films was obviously enhanced with the highest value of 0.91 S cm-1 by inserting EDOT in the conjugated block, whereas their Seebeck coefficient was brought down to 12 μV K-1. In this work, We obtained four different feeding ratios copolymers of SE and EDOT, 2:1 (PA), 1:1 (PB), 1:2 (PC), and 1:5 (PD). The copolymers had improved electrical conductivity and environmental stability compared with polyselenophene. Furthermore, with increasing the feeding ratio of EDOT, the TE performance of the copolymers was significantly improved.

On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites

NASA Astrophysics Data System (ADS)

Thesberg, Mischa; Kosina, Hans; Neophytou, Neophytos

2016-12-01

Electron energy filtering has been suggested as a promising way to improve the power factor and enhance the ZT figure of merit of thermoelectric materials. In this work, we explore the effect that reduced dimensionality has on the success of the energy-filtering mechanism for power factor enhancement. We use the quantum mechanical non-equilibrium Green's function method for electron transport including electron-phonon scattering to explore 1D and 2D superlattice/nanocomposite systems. We find that, given identical material parameters, 1D channels utilize energy filtering more effectively than 2D as they: (i) allow one to achieve the maximal power factor for smaller well sizes/smaller grains which are needed to maximize the phonon scattering, (ii) take better advantage of a lower thermal conductivity in the barrier/boundary materials compared to the well/grain materials in both: enhancing the Seebeck coefficient; and in producing a system which is robust against detrimental random deviations from the optimal barrier design. In certain cases, we find that the relative advantage can be as high as a factor of 3. We determine that energy-filtering is most effective when the average energy of carrier flow varies the most between the wells and the barriers along the channel, an event which occurs when the energy of the carrier flow in the host material is low, and when the energy relaxation mean-free-path of carriers is short. Although the ultimate reason for these aspects, which cause a 1D system to see greater relative improvement than a 2D, is the 1D system's van Hove singularity in the density-of-states, the insights obtained are general and inform energy-filtering design beyond dimensional considerations.

Thermal transport properties of polycrystalline Pb2FeMoO6

NASA Astrophysics Data System (ADS)

Yuan, Xueping; Xu, Mingxiang

2018-06-01

Thermoelectric properties and specific heat of polycrystalline Pb2FeMoO6 have been systematically studied. The thermal conductivity increases monotonically with increasing of temperature, and reaches the maximum value 1.50 W m‑1 K‑1 at 350 K. The relatively low thermal conductivity is mainly attributed to the strong scattering effect of phonons at Fe/Mo sites. The negative Seebeck coefficient indicates the n-type conduction of the sample. The absolute value of S increases up to 20 μV K‑1 at 350 K. Due to the inhomogeneity resulting from Fe/Mo ions disorder, no distinct λ-type specific heat peak or anomaly typical for second-order transitions are observed.

Anomalous thermoelectricity in strained Bi2Te3 films

PubMed Central

Liu, Yucong; Chen, Jiadong; Deng, Huiyong; Hu, Gujin; Zhu, Daming; Dai, Ning

2016-01-01

Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization. PMID:27600406

Facile synthesis of PbTe nanoparticles and thin films in alkaline aqueous solution at room temperature

NASA Astrophysics Data System (ADS)

Wang, Y. Y.; Cai, K. F.; Yao, X.

2009-12-01

A novel, simple, and cost-effective route to PbTe nanoparticles and films is reported in this paper. The PbTe nanoparticles and films are fabricated by a chemical bath method, at room temperature and ambient pressure, using conventional chemicals as starting materials. The average grain size of the nanoparticles collected at the bottom of the bath is ˜25 nm. The film deposited on glass substrate is dense, smooth, and uniform with silver gray metallic luster. The film exhibits p-type conduction and has a moderate Seebeck coefficient value (˜147 μV K -1) and low electrical conductivity (˜0.017 S cm -1). The formation mechanism of the PbTe nanoparticles and films is proposed.

Thermoelectric properties of lanthanum sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, A.; Parker, J.; Zoltan, A.; Zoltan, D.

1985-01-01

The Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect have been studied in gamma-phase La(3-x)S4(LaS/y/) for compositions with x in the range from 0.04 to 0.3 (y in the range from 1.35 to 1.48) in order to ascertain its suitability for high-temperature (300 to 1400 K) thermoelectric energy conversion. In this temperature and composition range the material behaves as an extrinsic semiconductor whose degenerate carrier concentration is controlled by the stoichiometric ratio of La to S. A maximum figure-of-merit (Z) of approximately 0.0005 per K at a composition x = 0.3, y = 1.48 (LaS/1.48/) was obtained.

N-type Doped PbTe and PbSe Alloys for Thermoelectric Applications

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor); LaLonde, Aaron (Inventor); Pei, Yanzhong (Inventor); Wang, Heng (Inventor)

2014-01-01

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe.sub.1-xI.sub.x with carrier concentrations ranging from 5.8.times.10.sup.18-1.4.times.10.sup.20 cm.sup.-3.

Thermoelectric transport properties of Ti doped/adsorbed monolayer blue phosphorene.

PubMed

Zhu, Lin; Li, Bowen; Yao, Kailun

2018-08-10

Thermoelectric transport properties of Ti doped or adsorbed monolayer blue phosphorene are investigated by density functional theory combined with the nonequilibrium Green's function formalism. The thermal giant magnetoresistance and a nearly 100% spin polarization which solely relies on the temperature gradient of electrodes without bias or gate voltage are observed. Moreover, the spin Seebeck effect is also found. Furthermore, taking into account the electronic and phonon dispersion, the thermoelectric merit for Ti doping in the monolayer blue phosphorene at room temperature is also studied, the maximum value of thermoelectric merit can reach 1.01 near the Fermi level. The results indicate that Ti doped or adsorbed monolayer blue phosphorene has potential application in both spintronics and spin caloritronics.

Wiedemann{endash}Franz law at boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahan, G.D.; Bartkowiak, M.

1999-02-01

The full equations are derived for the resistances to the transport of heat and electricity through boundaries of thermoelectrics. We show that the boundary resistances of heat and electricity are proportional. This relationship is a boundary form of the Wiedemann{endash}Franz law. We also show there is a boundary Seebeck coefficient. {copyright} {ital 1999 American Institute of Physics.}

Effect of local atomic and electronic structures on thermoelectric properties of chemically substituted CoSi

NASA Astrophysics Data System (ADS)

Hsu, C. C.; Pao, C. W.; Chen, J. L.; Chen, C. L.; Dong, C. L.; Liu, Y. S.; Lee, J. F.; Chan, T. S.; Chang, C. L.; Kuo, Y. K.; Lue, C. S.

2014-05-01

We report the effects of Ge partial substitution for Si on local atomic and electronic structures of thermoelectric materials in binary compound cobalt monosilicides (\\text{CoSi}_{1-x}\\text{Ge}_{x}\\text{:}\\ 0 \\le x \\le 0.15 ). Correlations between local atomic/electronic structure and thermoelectric properties are investigated by means of X-ray absorption spectroscopy. The spectroscopic results indicate that as Ge is partially substituted onto Si sites at x \\le 0.05 , Co in CoSi1-xGex gains a certain amount of charge in its 3d orbitals. Contrarily, upon further replacing Si with Ge at x \\ge 0.05 , the Co 3d orbitals start to lose some of their charge. Notably, thermopower is strongly correlated with charge redistribution in the Co 3d orbital, and the observed charge transfer between Ge and Co is responsible for the variation of Co 3d occupancy number. In addition to Seebeck coefficient, which can be modified by tailoring the Co 3d states, local lattice disorder may also be beneficial in enhancing the thermoelectric properties. Extended X-ray absorption fine structure spectrum results further demonstrate that the lattice phonons can be enhanced by Ge doping, which results in the formation of the disordered Co-Co pair. Improvements in the thermoelectric properties are interpreted based on the variation of local atomic and electronic structure induced by lattice distortion through chemical substitution.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Effets thermoelectrique et thermomagnetique du yttrium barium copper oxide monocristallin

NASA Astrophysics Data System (ADS)

Ghamlouche, Hassan

1998-09-01

Des la decouverte des supraconducteurs a haute temperature critique, les recherches se sont intensifiees afin de comprendre les mecanismes qui sont a l'origine des proprietes de ces materiaux L'etat mixte, tout comme l'etat supraconducteur pur et l'etat normal, a fait l'objet de nombreux travaux de recherche. En particulier, la structure des vortex a l'etat mixte, et leur mouvement sous l'effet d'une force quelconque, etaient et restent le centre de preoccupation. Les effets thermoelectrique (Seebeck) et thermomagnetique (Nernst) sont parmi les differentes mesures qui peuvent donner de l'information sur les etats des vortex a l'etat mixte. L'avantage essentiel de ces deux effets est l'absence d'un courant electrique applique. Ce dernier peut donner des perturbations indesirables durant les mesures. D'autre pari, nous avons utilise la methode CA (Courant Alternatif) pour effectuer nos mesures. Cette methode est caracterisee par une meilleure resolution par rapport a la methode CC (Courant Continu) conventionnelle. Nous avons etudie autant des echantillons macles que des echantillons sans macles. D'abord nous avons teste notre montage a champ magnetique nul. Nous avons alors montre que le pic rapporte par certains dans l'effet Seebeck a la transition supraconductrice ne correspond pas a une realite physique mais a un artefact experimental. On avait associe ce pic aux fluctuations. Par la suite, nous avons mis en evidence et etudie pour la premiere fois avec les effets Seebeck et Nernst le phenomene de la fusion du reseau de vortex grace a des mesures sur les echantillons sans macles. Cette etude s'est faite pour deux concentrations d'oxygene differentes et pour un gradient de temperature parallele, consecutivement, aux deux axes cristallographiques dans le plan ab. Finalement, nous avons etudie l'effet des plans de maclage sur le mouvement des vortex. Ceci a ete realise en appliquant le gradient de temperature selon trois directions differentes (0, 45 et 90°) avec

Transport and superconducting properties of Fe-based superconductors: a comparison between SmFeAsO1-xFx and Fe1+yTe1-xSex

NASA Astrophysics Data System (ADS)

Tropeano, M.; Pallecchi, I.; Cimberle, M. R.; Ferdeghini, C.; Lamura, G.; Vignolo, M.; Martinelli, A.; Palenzona, A.; Putti, M.

2010-05-01

In this paper we carry out a direct comparison between transport and superconducting properties—namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field—of two different families of Fe-based superconductors, which can be viewed in many respects as end members: SmFeAsO1 - xFx with the largest Tc and the largest anisotropy and Fe1 + yTe1 - xSex, with the largest Hc2, the lowest Tc and the lowest anisotropy. In the case of the SmFeAsO1 - xFx series, we find that a single-band description allows us to extract an approximate estimation of band parameters such as carrier density and mobility from experimental data, although the behaviour of the Seebeck effect as a function of doping demonstrates that a multiband description would be more appropriate. On the contrary, experimental data for the Fe1 + y(Te1 - x, Sex) series exhibit a strongly compensated behaviour, which can be described only within a multiband model. In the Fe1 + y(Te1 - x, Sex) series, the role of the excess Fe, tuned by Se stoichiometry, is found to be twofold: on one hand it dopes electrons in the system and on the other hand it introduces localized magnetic moments, responsible for Kondo like scattering and likely pairbreaking of Cooper pairs. Hence, Fe excess also plays a crucial role in determining superconducting properties such as the Tc and the upper critical field Hc2. The huge Hc2 values of the Fe1 + yTe1 - xSex samples are described by a dirty limit law, opposed to the clean limit behaviour of the SmFeAsO1 - xFx samples. Hence, magnetic scattering by excess Fe seems to drive the system in the dirty regime, but its detrimental pairbreaking role seems not to be as severe as predicted by theory. This issue has yet to be clarified, addressing the more fundamental issue of the interplay between magnetism and superconductivity.

The effect of shallow vs. deep level doping on the performance of thermoelectric materials

NASA Astrophysics Data System (ADS)

Song, Qichen; Zhou, Jiawei; Meroueh, Laureen; Broido, David; Ren, Zhifeng; Chen, Gang

2016-12-01

It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the bandgap falls. Our research provides insight on why different dopants often affect thermoelectric transport properties differently and directions in searching for the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.

Record figure of merit values of highly stoichiometric Sb 2Te 3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

DOE PAGES

Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; ...

2015-08-06

We report on the synthesis of Sb 2Te 3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

Development of advanced thermoelectric materials, phase A

NASA Technical Reports Server (NTRS)

1980-01-01

Work performed on the chemical system characterized by chrome sulfide, chrome selenide, lanthanum selenide, and lanthanum sulfide is described. Most materials within the chemical systems possess the requisites for attractive thermoelectric materials. The preparation of the alloys is discussed. Graphs show the Seebeck coefficient, electrical resistivity, and thermal conductivity of various materials within the chemical systems. The results of selected doping are included.

Personal Cooling Fabric Based on Polymeric Thermoelectrics

DTIC Science & Technology

2016-07-28

weight organic materials. Furthermore, p- and n-doped conjugated polymers with high electrical conductivity were discovered over two decades ago...fully conjugated PPV polymer MEH-PPV with SWCNT provided films with the highest conductivity while maintaining relatively unchanged Seebeck...Geise, H. J., Synthesis of Electrically Conducting Copolymers with Short Alternating Conjugated and Non- conjugated Blocks. Polymer 1994, 35, (2), 391-397.

Design, Fabrication, Characterization and Modeling of Integrated Functional Materials

DTIC Science & Technology

2013-10-01

coated microwire to change the temperature of an FBG. We show below that the proposed sensor probe, with a relatively poor thermal coupling with FBG...Seebeck coefficient and decreased thermal conductivity due to the phenomenological properties of nanometer length scales, including enhanced...nanocomposites as compared to bulk polycrystalline materials, in addition to similar thermal conductivities , results in enhanced room temperature ZT as

Development of High ZT Thermoelectric Materials with Nanostructure for Energy Applications

DTIC Science & Technology

2010-03-03

film and nanowires array (embedded in alumina template) were fabricated by potentiostatically electrodeposition . The Seebeck coefficient, electrical...by potentiostatically electrodeposition . The followings are our reports on the synthesis and characterizations of these nano-materials. B1...Synthesis of the nanomaterials Bi2Te3 films were electrodeposited potentiostatically at -150 mV onto an ITO glass substrate from 1 M HNO3 solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heimann, Stefan; Schulz, Stephan; Schaumann, Julian

We report on the synthesis of Sb 2Te 3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

NASA Astrophysics Data System (ADS)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Fabrication and thermoelectric properties of n-type (Sr0.9Gd0.1)TiO3 oxides

NASA Astrophysics Data System (ADS)

Li, Liangliang; Qin, Xiaoying; Liu, Yongfei; Xin, Hongxing; Zhang, Jian; Li, Di; Song, Chunjun; Guo, Guanglei; Dou, Yunchen; Zou, Tianhua

2014-02-01

The n-type oxides (Sr0.9Gd0.1)TiO3 (SGTO) have been successfully prepared via a sol-gel process followed by solid-state sintering. The effects of sintering temperature on the thermoelectric (TE) properties of the SGTO samples have been investigated. The Seebeck coefficient showed no obvious difference, while the electrical conductivity increased with increasing sintering temperature, benefiting from an enhancement of densification. The maximum power factor (PF) value, 20.5μW/K2cm at 370 K in the metallic region, was observed for the sample sintered at 1748 K. As a result, the peak figure of merit (ZT) values for the samples sintered at higher than 1673 K were in the range of 0.28-0.30. All the results indicate that such synthetic method provides a simple and effective way to prepare TE oxides.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE PAGES

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-07-21

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hui; Lu, Xu; Morelli, Donald T.

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

NASA Technical Reports Server (NTRS)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Magnetothermoelectric effects in graphene and their dependence on scatterer concentration, magnetic field, and band gap

NASA Astrophysics Data System (ADS)

Kundu, Arpan; Alrefae, Majed A.; Fisher, Timothy S.

2017-03-01

Using a semiclassical Boltzmann transport equation approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to acoustic phonons, charged impurities, and vacancies is considered in the model. Seebeck (Sxx) and Nernst (N) coefficients are evaluated as functions of carrier density, temperature, scatterer concentration, magnetic field, and induced band gap, and the results are compared to experimental data. Sxx is an odd function of Fermi energy, while N is an even function, as observed in experiments. The peak values of both coefficients are found to increase with the decreasing scatterer concentration and increasing temperature. Furthermore, opening a band gap decreases N but increases Sxx. Applying a magnetic field introduces an asymmetry in the variation of Sxx with Fermi energy across the Dirac point. The formalism is more accurate and computationally efficient than the conventional Green's function approach used to model transport coefficients and can be used to explore transport properties of other materials with Dirac cones such as Weyl semimetals.

Correlation between structural and transport properties of electron beam irradiated PrMnO3 compounds

NASA Astrophysics Data System (ADS)

Christopher, Benedict; Rao, Ashok; Nagaraja, B. S.; Shyam Prasad, K.; Okram, G. S.; Sanjeev, Ganesh; Petwal, Vikash Chandra; Verma, Vijay Pal; Dwivedi, Jishnu; Poornesh, P.

2018-02-01

The structural, electrical, magnetic, and thermal properties of electron beam (EB) irradiated PrMnO3 manganites were investigated in the present communication. X-ray diffraction data reveals that all samples are single phased with orthorhombic distorted structure (Pbnm). Furthermore, the diffracted data are analyzed in detail using Rietveld refinement technique. It is observed that the EB dosage feebly disturbs the MnO6 octahedra. The electrical resistivity of all the samples exhibits semiconducting behavior. Small polaron hopping model is conveniently employed to investigate the semiconducting nature of the pristine as well as EB irradiated samples. The Seebeck coefficient (S) of the pristine as well as the irradiated samples exhibit large positive values at lower temperatures, signifying holes as the dominant charge carriers. The analysis of Seebeck coefficient data confirms that the small polaron hopping mechanism assists the thermoelectric transport property in the high temperature region. The magnetic measurements confirm the existence of paramagnetic (PM) to ferromagnetic (FM) behavior for the pristine and irradiated samples. In the lower temperature regime, coexistence of FM clusters and AFM matrix is dominating. Thus, the complex magnetic behavior of the compound has been explained in terms of rearrangement of antiferromagnetically coupled ionic moments.

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

NASA Astrophysics Data System (ADS)

Lee, Heon-Bok; Yang, Hyun Jeong; We, Ju Hyung; Kim, Kukjoo; Choi, Kyung Cheol; Cho, Byung Jin

2011-05-01

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn x Sb1- x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn x Sb1- x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 1018/cm3. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm2, respectively, at Δ T = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb3 as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.

Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices

NASA Astrophysics Data System (ADS)

Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.

2018-03-01

The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.

Directional Solidification of Bi-Sn on USMP-4

NASA Technical Reports Server (NTRS)

Abbaschian, Reza; deGroh, H., III; Leonardi, E.; Timchenko, V.; deVahlDavis, G.

1999-01-01

The experiments used MEPHISTO hardware to study the solidification and melting behavior of bismuth alloyed with 1 at% tin. Three samples, each approximately 900 mm long and 6mm in diameter, were used. A portion of each sample also included a 2 mm diameter growth capillary, to assist in the formation of a single grain. One sample provided the Seebeck voltage generated during melting and freezing processes. Another provided temperature data and Peltier pulsed demarcation of the interface shape for post flight analysis. The third sample provided resistance and growth velocity measurements, as well as additional thermal data. The third sample was also quenched at the end of the mission to preserve the composition of the liquid near the interface for post flight determination. A total of 450mm of directionally solidified samples were preserved for post mission structural and compositional characterization. Substantial differences were observed in the Seebeck signal between the ground-based experiments and the space-based experiments. The temperature gradient in the liquid for the ground-based experiments was significantly lower than the temperature gradient in the liquid for the space-based experiments.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

NASA Astrophysics Data System (ADS)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Thermoelectric Properties of n-type SnSe Single Crystal

NASA Astrophysics Data System (ADS)

Nguyen, Phuong; Duong, Anh Tuan; Rhim, S. H.; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Cho, Sunglae; Kwon, Suyong; Song, Jae Yong; Park, Hyun Min

Although thermoelectric materials are well known for their reliability and have been used for many years, even in the field of space engineering, their performance is quite small due to low energy conversion efficiency. Dimensionless figure of merit, ZT = S2. σ.T.κ-1 (where S, σ, T, κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively) is conveniently used to evaluate the conversion efficiency of a thermoelectric materials. Recently, the highest value of ZT to date has been reported for single crystal SnSe, ZT = 2.6 along the b axis of unit cell at 923 K. This temperature is rather high and the range of temperature for high reported ZT is quite narrow. Here we report an attempt to modify the thermoelectric properties of SnSe by using group V and VII as n-type dopant. A negative value of Seebeck coefficient was observed and the power factor reached a peak of 10 μW.K-2.cm-1 at around 600 K. The maximum n-type ZT was 0.57 at 650 K. We will discuss on dopant dependent thermoelectric properties of n-type SnSe single crystals.

Novel Electronically Conducting Tellurium Oxides

NASA Astrophysics Data System (ADS)

Subramanian, Mas; Siritanon, Theerunan; Sleight, Arthur

2010-03-01

Tellurium oxides seldom show measurable electronic conductivity. Tellurium oxides that appear to have Te^5+ contain Te^4+ and Te^6+ in two distinct crystallographic sites and are electronic insulators. Here we report on the synthesis and characterization of several new tellurium rich oxides of the general formula, CsMxTe2-xO6, crystallizing in modified pyrochlore structure. Most of the compounds reported here are black in color with some exhibiting good electronic conductivities (2 S/cm) and Seebeck measurements indicate all are n-type. The observation of high electronic conductivities in compounds like CsGe0.5Te1.5O6, CsAl0.33Te1.67O6 confirms that observed conductivity is arising from doping of electrons into the empty 5s orbitals of Te^6+. This reduction is apparently accompanied with some small deviation from the ideal formula: oxygen content and/or ratio of cations on octahedral sites. This is in consistent with single-crystal X-ray as well as powder neutron diffraction structure refinements and the observed sign of the Seebeck coefficient. To our knowledge, this is a first observance of high electrical conductivity in mixed valent tellurium oxides.

Enhanced thermoelectric performance of Pb doped Cu2SnSe3 synthesized employing spark plasma sintering

NASA Astrophysics Data System (ADS)

Shyam Prasad, K.; Rao, Ashok; Tyagi, Kriti; Singh Chauhan, Nagendra; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay

2017-05-01

We report an enhancement in the thermoelectric performance of Cu2SnSe3 alloy on Pb doping, owing to a sharp increase in its power factor. The powder XRD pattern of all samples of Cu2Sn1-xPbxSe3 (0≤x≤0.03), prepared using solid state reaction, exhibited a cubic structure with a space group of F 4 ̅ 3 m . The results show that temperature dependent electrical resistivity, ρ(T) increases with increasing temperature thereby demonstrating that the samples display heavily doped semiconducting nature, which could be satisfactorily described by small polaron hopping model in the whole temperature range of measurement for all the samples. Both the resistivity and the Seebeck coefficient are reduced with 2 vol% Pb doping. The thermal conductivity of all the samples reduces with increasing temperature. Despite a decrease in Seebeck coefficient the power factor shows an increase on Pb doping, owing to a sharp surge in the electrical conductivity which results in an enhanced ZTmax 0.64 at 700 K for an optimized composition of Cu2Sn0.98Pb0.02Se3, which is nearly twice the value of the corresponding undoped counterpart.

Magnetism and transport properties of layered rare-earth cobaltates Ln{sub 0.3}CoO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knížek, K., E-mail: knizek@fzu.cz; Novák, P.; Jirák, Z.

2015-05-07

The ab-initio (GGA+U) electronic structure calculations of layered cobaltates Ln{sub 0.3}CoO{sub 2} (Ln = La, Pr, Nd) prepared by ionic exchange from Na{sub 0.90}CoO{sub 2} precursors have been performed. The data are used for numerical modeling of Seebeck coefficient within Boltzmann transport theory using BoltzTraP program [G. K. H. Madsen and D. J. Singh, Comput. Phys. Commun. 175, 67 (2006)], as well as for determination of the crystal field split levels of rare-earth ions using a method based on a transformation of Bloch states into the basis of Wannier functions [P. Novák et al., Phys. Rev. B 87, 205139 (2013)]. An overallmore » agreement with observed magnetism and transport properties is obtained. In particular, the high p-type thermopower is well reproduced in a broad temperature range, but instead of theoretical linear decrease down to the lowest temperatures, the real systems exhibit an anomalous change of Seebeck sign, which might be related to the change of bare metallic carriers into the polaronic ones.« less

Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process

NASA Astrophysics Data System (ADS)

Park, Kyeongsoon; Lee, Ga Won

2011-10-01

High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature.

Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process

PubMed Central

2011-01-01

High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature. PMID:21974984

Thermoelectric properties of Ca0.8Dy0.2MnO3 synthesized by solution combustion process.

PubMed

Park, Kyeongsoon; Lee, Ga Won

2011-10-05

High-quality Ca0.8Dy0.2MnO3 nano-powders were synthesized by the solution combustion process. The size of the synthesized Ca0.8Dy0.2MnO3 powders was approximately 23 nm. The green pellets were sintered at 1150-1300°C at a step size of 50°C. Sintered Ca0.8Dy0.2MnO3 bodies crystallized in the perovskite structure with an orthorhombic symmetry. The sintering temperature did not affect the Seebeck coefficient, but significantly affected the electrical conductivity. The electrical conductivity of Ca0.8Dy0.2MnO3 increased with increasing temperature, indicating a semiconducting behavior. The absolute value of the Seebeck coefficient gradually increased with an increase in temperature. The highest power factor (3.7 × 10-5 Wm-1 K-2 at 800°C) was obtained for Ca0.8Dy0.2MnO3 sintered at 1,250°C. In this study, we investigated the microstructure and thermoelectric properties of Ca0.8Dy0.2MnO3, depending on sintering temperature.

Characterization of Liquid Lithium Wetting and Thermoelectric Properties for Nuclear Fusion Applications

NASA Astrophysics Data System (ADS)

Fiflis, Peter; Xu, Wenyu; Christenson, Michael; Andruczyk, Daniel; Curreli, Davide; Ruzic, David

2013-10-01

Critical to the implementation of flowing liquid lithium plasma facing components is understanding the interactions of liquid lithium with various surfaces. Presented here are experiments investigating the material compatibility, wetting characteristics, and relative thermopower of liquid lithium with a variety of potential substrate candidates for the LiMIT concept. Wetting experiments with lithium used the contact angle as a metric. Among those materials investigated are 316 SS, Mo, Ta, and W. The contact angle, as well as its dependence on temperature was measured. For example, at 200 C, tungsten registers a contact angle of 130°, whereas above its wetting temperature of 350 C, the contact angle is less than 80°. Several methods were found to decrease the critical wetting temperature of various materials and are presented here. The thermopower of W, Mo, Ta, Li, Ga, Wood's metal and Sn has been measured relative to stainless steel, and the Seebeck coefficient of has then been calculated. For molybdenum the Seebeck coefficient has a linear rise with temperature from SMo = 3.9 μVK-1 at 30 °C to 7.5 μVK-1 at 275 °C. On Assignment at PPPL

Magnon rainbows filtered through phonon clouds

NASA Astrophysics Data System (ADS)

Boona, Stephen R.

2016-06-01

The study of heat flow in magnetic insulators is a topic of significant interest in spin caloritronics, especially for understanding the nuanced origins of the spin Seebeck effect (SSE). Recent work by Diniz and Costa (2016 New J. Phys. 18 052002) provides insight into this subject by presenting a microscopic model for the spectral dependence of magnon-phonon interactions in magnetic insulators, which has been a challenging puzzle for decades. Their new paper shows that phonon-mediated magnon-magnon interactions affect the lifetime of magnons differently depending on the magnon wavelength. As a result, low energy magnons transport spin more efficiently, and are more sensitive to applied magnetic fields. These results help explain some unexpected behavior in the SSE recently reported in several experiments.

Very High Output Thermoelectric Devices Based on ITO Nanocomposites

NASA Technical Reports Server (NTRS)

Fralick, Gustave; Gregory, Otto J.

2009-01-01

A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping.

PubMed

Kumar, S R Sarath; Barasheed, Abeer Z; Alshareef, H N

2013-08-14

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m(-1) K(-1), and the estimated figure of merit is 0.29 at 1000 K.

Influence of excess SrO on the thermoelectric properties of heavily doped SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Wang, Yifeng; Wan, Chunlei; Zhang, Xiaoyan; Shen, Liming; Koumoto, Kunihito; Gupta, Arunava; Bao, Ningzhong

2013-05-01

The effects of excess SrO on the thermoelectric properties of n-type SrTiO3 have been investigated through a comparative study of different polycrystalline ceramic samples. These include Gd-doped SrTiO3 with varying SrO, nominally in the form of Ruddlesden-Popper phase of SrO(SrTiO3)n with n = 5, 10, and 20, and previously reported analogues with n = 1, 2, and ∞ (i.e., stoichiometric SrTiO3). As compared with stoichiometric SrTiO3, with increasing SrO excess (i.e., decreasing n value), the electrical conductivity is found to decrease more substantially than the thermal conductivity, while the Seebeck coefficient remains almost unaffected with n in the range of 5-20.