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Sample records for selected energy epitaxial

  1. Effects of contamination on selective epitaxial growth

    NASA Astrophysics Data System (ADS)

    MacDonald, Brian J.; Paton, Eric; Adem, Ercan; En, Bill

    2004-06-01

    As MOSFET dimensions scale down in size, it has become increasingly difficult to maintain high drive current while suppressing the off-state leakage current. One method of avoiding short-channel effects is to scale the source/drain (S/D) junction depths proportionally with the gate length. Unfortunately, this increases the S/D resistance, which slows the circuit. To keep the S/D junction shallow without affecting the S/D resistance, a raised S/D (RSD) structure is required. Integrating RSD can be difficult. Selective epitaxial growth (SEG) is the process used to incorporate RSD. This process requires a relatively clean surface to initiate the growth. Insertion of SEG earlier in the process flow facilitates selective epitaxial growth. Insertion of SEG later in the process flow results in higher levels of contamination at the interface of the Si substrate and the RSD structure. In this paper, we identify some mechanisms that determine the quality of the selective epitaxial film. Results indicate that Si defects are not a dominant mechanism in SEG film quality. Instead, results suggest that higher levels of contamination increased the surface roughness of the epitaxial film. PMOS regions were found to have higher levels of contamination and rougher epitaxial films than NMOS regions. Hydrogen bake as high as 900 °C was required to lower the surface contamination and provide excellent epitaxial morphology. Unfortunately, this high temperature causes enhanced dopant diffusion and deactivation of the device. Previous work [H. van Meer, K. De Meyer, Symposium on VLSI Technology Digest of Technical Papers, 2002, p. 170.] identified an alternative integration that provides excellent quality selective epitaxy, without dopant diffusion and deactivation.

  2. Selective epitaxy using the GILD process

    SciTech Connect

    Weiner, K.H.

    1990-12-31

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge{sub x}Si{sub 1-x} grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  3. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  4. Low energy dislocation structures in epitaxy

    NASA Technical Reports Server (NTRS)

    Van Der Merwe, Jan H.; Woltersdorf, J.; Jesser, W. A.

    1986-01-01

    The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

  5. Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection.

    PubMed

    Ding, Hong; Dwaraknath, Shyam S; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A

    2016-05-25

    With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available. PMID:27145398

  6. Tuning a strain-induced orbital selective Mott transition in epitaxial VO2

    NASA Astrophysics Data System (ADS)

    Mukherjee, Shantanu; Quackenbush, N. F.; Paik, H.; Schlueter, C.; Lee, T.-L.; Schlom, D. G.; Piper, L. F. J.; Lee, Wei-Cheng

    2016-06-01

    We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO2/TiO2 films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is noninteger but close to the half filling. Because the overlaps of wave functions between d orbitals are modified by the strain, orbital-dependent renormalizations of the bandwidths and the onsite energy occur. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a noninteger filling number near the half filling such as for VO2, certain orbitals could reach an occupation number closer to half filling under the strain, resulting in a strong reduction in the quasiparticle weight Zα of that orbital. Our work demonstrates that such an orbital selective Mott transition, defined as the case with Zα=0 in some but not all orbitals, could be accessed by epitaxial-strain engineering of correlated electron systems.

  7. Selective epitaxy of gallium nitride and related materials by metal-organic chemical vapor depostion

    NASA Astrophysics Data System (ADS)

    Kapolnek, David Joseph

    1999-11-01

    Selective epitaxy has been applied to many semiconductor materials for a variety of applications. We have developed basic selective epitaxy processes for Gallium Nitride, an important wide band gap semiconductor. This work has revealed that in many respects, GaN behaves similarly to other semiconductors. This makes possible such applications as regrown FET contacts and other three-dimensional device structures. In addition, selective growth using relatively small mask openings results in highly anisotropic growth that is exploited for a number of other applications. GaN pyramids grown using circular mask openings are ideal structures for GaN electron field emission devices. Lateral epitaxial overgrowth grown with linear mask openings is an exciting process that has recently been used for both GaN dislocation reduction and for buried structures in GaN epitaxial films. The discovery of GaN LEO has resulted in an explosion of research and has been applied in commercial GaN laser diodes. The fundamentals of Gallium Nitride selective epitaxy and the most important applications are contained in this dissertation.

  8. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

    PubMed

    Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

    2015-07-01

    Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si. PMID:26057208

  9. Magnetite epitaxial growth on Ag(001): Selected orientation, seed layer, and interface sharpness

    NASA Astrophysics Data System (ADS)

    Lamirand, A. D.; Grenier, S.; Langlais, V.; Ramos, A. Y.; Tolentino, H. C. N.; Torrelles, X.; De Santis, M.

    2016-05-01

    Epitaxial iron oxide layers with different orientations were grown on Ag(001) surface by choosing the appropriate preparation conditions. A film with a hexagonal surface mesh interpreted as (111)-oriented magnetite was formed by reactive deposition of iron in molecular oxygen at room temperature (RT), followed by annealing in UHV. Instead, highly ordered epitaxial layers with P4m symmetry were obtained by a three-step process, optimized through in situ experiments. Following this method, an ultrathin Fe layer was first grown in coherent epitaxy on the substrate and then dosed twice with O2, first at RT and next during annealing. A structural analysis combining low-energy electron diffraction, scanning tunneling microscopy, and accurate surface x-ray diffraction measurements confirmed that these films consist of (001)-oriented magnetite, although with a slight tetragonal distortion induced by the substrate constraints. Both its surface and interface are atomically sharp, an essential requirement for its integration into spintronic based devices.

  10. GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer

    NASA Astrophysics Data System (ADS)

    Cederberg, Jeffrey G.; Leonhardt, Darin; Sheng, Josephine J.; Li, Qiming; Carroll, Malcolm S.; Han, Sang M.

    2010-04-01

    We describe efforts to epitaxially integrate GaAs with Si, using thin, relaxed Ge layers. The Ge films are deposited by molecular beam epitaxy using a self-assembled, selective-area growth technique, where atomic Ge etches an SiO 2 mask layer and then grows from pores extending to the Si substrate. The resulting Ge film coalesces over the SiO 2 mask and is planarized, using H 2O 2-based chemical-mechanical polishing. We subsequently deposit a GaAs/AlAs heterostructure on the polished Ge on Si substrate by metal-organic vapor phase epitaxy. While the initial Ge films were completely relaxed and dislocation-free, they contain a high density of stacking faults that propagate through the GaAs/AlAs heterostructure. These stacking faults create phase domains that appear as non-radiative recombination centers in cathodoluminescence images. Further development of two-step Ge epitaxy with an anneal near the Ge melting point eliminates stacking faults in the Ge, but decomposes the SiO 2 mask allowing threading dislocations to form and propagate through the GaAs/AlAs heterostructure. We discuss our strategy to prevent the loss of the SiO 2 mask and thus reduce threading dislocations.

  11. Selective epitaxial Si based layers and TiSi 2 deposition by integrated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Regolini, J. L.; Margail, J.; Bodnar, S.; Maury, D.; Morin, C.

    1996-07-01

    High performance IC manufacturing requirements, such as large diameter wafer uniformity, reproducibility, throughput and reliability can be fulfilled by commercial integrated processing, single wafer cluster tools. This paper presents results obtained on an industrial cluster reactor for 200 mm wafers by combining epitaxial silicon related materials and selective deposition of TiSi 2. Low temperature epitaxial Si and SiGe alloys are studied for buried thin layers used in CMOS and HBT devices. The doping profile abruptness for B and P are within SIMS resolution limits. TheTiSi 2/Si selective deposition is also investigated, sequentially and in situ, as a technique for future salicidedS/D with a reduction in technological steps and interface contamination. Statistical electrical results obtained using 0.35 and 0.25 μm CMOS technologies in which the CVD silicide deposition is tested, are presented and compared with the standard salicide technique.

  12. A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

    NASA Astrophysics Data System (ADS)

    Geynet, B.; Chevalier, P.; Brossard, F.; Vandelle, B.; Schwartzmann, T.; Buczko, M.; Avenier, G.; Dutartre, D.; Dambrine, G.; Danneville, F.; Chantre, A.

    2009-08-01

    This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail the dc and ac characteristics of the devices and demonstrate the improvement of the control of doping profiles at the base/collector junction. State-of-the-art f T value of 350 GHz has been achieved, the f T BV CEO product being equal to 525 GHz. V.

  13. Characterization of selective epitaxial graphene growth on silicon carbide: Limitations and opportunities

    NASA Astrophysics Data System (ADS)

    Zaman, Farhana

    The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows — First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This contribution enables the formation of electronic-grade graphene in desired patterns without having to etch the graphene or expose it to any detrimental contact with external chemicals. Etching of AlN opens up windows to the SiC in desirable patterns for subsequent graphitization without leaving etch-residues (determined by XPS). Second, the impact of process parameters on the growth of graphene is investigated. Temperature, time, and argon pressure are the primary growth-conditions altered. A temperature of 1400°C in 1 mbar argon for 20 min produced the most optimal graphene growth without significant damage to the AlN capping-layer. Third, first-ever electronic transport measurements are achieved on the selective epitaxial graphene. Hall mobility of about 1550 cm2/Vs has been obtained to date. Finally, the critical limitations of the selective epitaxial graphene growth are enumerated. The advent of enhanced processing techniques that will overcome these limitations will create a multitude of opportunities for applications for graphene grown in this manner. It is envisaged to be a viable approach to fabrication of radio-frequency field-effect transistors.

  14. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  15. III-V Nanowire Array Growth by Selective Area Epitaxy

    NASA Astrophysics Data System (ADS)

    Chu, Hyung-Joon; Yeh, Tingwei; Stewart, Lawrence; Dapkus, P. Daniel

    2011-12-01

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH3 decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  16. III-V Nanowire Array Growth by Selective Area Epitaxy

    SciTech Connect

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Tingwei; Dapkus, P. Daniel

    2011-12-23

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH{sub 3} decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  17. Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

    NASA Astrophysics Data System (ADS)

    Aagesen, L. K.; Lee, L. K.; Ku, P.-C.; Thornton, K.

    2012-12-01

    Arrays of semiconductor quantum dots grown by selective area epitaxy, a process in which the size and position of the dots is determined by a lithographically patterned mask, can have a high degree of uniformity in both size and position. However, non-uniformity in the initial stages of growth causes broadening of the energy states of GaN/InGaN heterostructures grown using this technique, limiting their practical utility for device applications. A phase-field model was developed to simulate selective area epitaxy, accounting for a crystallographic-orientation-dependent deposition rate. Model parameters were varied to optimize the uniformity of the InGaN active layers. Conditions that led to the most uniform active layers included low total deposition rate, high surface diffusivity, low deposition of surface adatoms from the mask, and smaller contact angle at the mask-vapor-quantum dot interface. Other factors that improved uniformity were growth on (0001) substrates, which is the fastest growth direction, and more vertical orientation of the sidewalls of the mask holes.

  18. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  19. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  20. Slip propagation in epitaxial Mo (011) studied by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    Mundschau, M.; Swięch, W.; Durfee, C. S.; Flynn, C. P.

    1999-10-01

    We report observations of slip processes in epitaxial films of Mo (011) grown on sapphire by molecular beam epitaxy. Low-energy electron microscopy is employed to follow the time evolution of the screw dislocation, the interfacial dislocation, and the surface step edge structure through which the slip takes place. Under certain conditions the dislocation system is observed to trap briefly as it meets successive surface steps.

  1. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOEpatents

    Sheldon, Peter; Hayes, Russell E.

    1986-01-01

    A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  2. Process for selectively patterning epitaxial film growth on a semiconductor substrate

    DOEpatents

    Sheldon, P.; Hayes, R.E.

    1984-12-04

    Disclosed is a process for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

  3. Evolution of GaAs nanowire geometry in selective area epitaxy

    SciTech Connect

    Bassett, Kevin P.; Mohseni, Parsian K.; Li, Xiuling

    2015-03-30

    Nanowires (NWs) grown via selective area epitaxy (SAE) show great promise for applications in next generation electronic and photonic devices, yet the design of NW-based devices can be complicated due to the complex kinetics involved in the growth process. The presence of the patterned selective area mask, as well as the changing geometry of the NWs themselves during growth, leads to non-linear growth rates which can vary significantly based on location in the mask and the NW size. Here, we present a systematic study of the evolution of GaAs NW geometry during growth as a function of NW size and pitch. We highlight a breakdown of NW uniformity at extended growth times, which is accelerated for NW arrays with larger separations. This work is intended to outline potential fundamental growth challenges in achieving desired III–V NW array patterns and uniformity via SAE.

  4. Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors

    NASA Astrophysics Data System (ADS)

    Nakahata, Takumi; Sugihara, Kohei; Abe, Yuji; Ozeki, Tatsuo

    2004-03-01

    We studied the dependence of selective epitaxially grown silicon (SEG-Si) morphology under ultrahigh vacuum chemical vapor deposition (UHV-CVD) conditions by using a mixture of disilane (Si 2H 6) and chlorine (Cl 2) gases on Si(1 0 0) substrates patterned a metal oxide semiconductor transistor with Si 3N 4 sidewalls. We confirmed that the morphology of the SEG-Si is strongly dependent on the dry etching conditions used for formation of the sidewall structures and that the Cl 2 plasma etching process results in lower damage to the substrate surface than CHF 3/Ar plasma etching. It was demonstrated that by combining low-damage sidewall etching with Cl 2 plasma and the UHV-CVD process with deoxidation effects it was possible to flatten the SEG-Si surface at temperatures below 700°C without the need for preheating at a higher temperature.

  5. Moiré induced organization of size-selected Pt clusters soft landed on epitaxial graphene

    PubMed Central

    Linas, Sébastien; Jean, Fabien; Zhou, Tao; Albin, Clément; Renaud, Gilles; Bardotti, Laurent; Tournus, Florent

    2015-01-01

    Two-dimensional hexagonal arrays of Pt nanoparticles (1.5 nm diameter) have been obtained by deposition of preformed and size selected Pt nanoparticles on graphene. This original self-organization is induced, at room temperature, by the 2D periodic undulation (the moiré pattern) of graphene epitaxially grown on the Ir(111) surface. By means of complementary techniques (scanning tunneling microscopy, grazing incidence X ray scattering), the Pt clusters shapes and organization are characterized and the structural evolution during annealing is investigated. The soft-landed clusters remain quasi-spherical and a large proportion appears to be pinned on specific moiré sites. The quantitative determination of the proportion of organized clusters reveals that the obtained hexagonal array of the almost spherical nanoparticles is stable up to 650 K, which is an indication of a strong cluster-surface interaction. PMID:26278787

  6. Thermodynamic guiding principles in selective synthesis of strontium iridate Ruddlesden-Popper epitaxial films

    NASA Astrophysics Data System (ADS)

    Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

    2016-03-01

    We demonstrate the selective fabrication of Ruddlesden-Popper (RP) type SrIrO3, Sr3Ir2O7, and Sr2IrO4 epitaxial thin films from a single SrIrO3 target using pulsed laser deposition (PLD). We identified that the growth conditions stabilizing each phase directly map onto the phase diagram expected from thermodynamic equilibria. This approach allows precise cation stoichiometry control as evidenced by the stabilization of single phase Sr3Ir2O7 for the first time, overcoming the close thermodynamic stability between neighboring RP phases. Despite the non-equilibrium nature of PLD, these results highlight the importance of thermodynamic guiding principles to strategically synthesize the targeted phase in complex oxide thin films.

  7. Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches

    SciTech Connect

    Jiang, S. Heyns, M.; Merckling, C.; Guo, W.; Waldron, N.; Caymax, M.; Vandervorst, W.; Seefeldt, M.

    2014-01-14

    The evolution of (001) and (111) facets for the epitaxial growth inside submicron trenches is systematically studied in this report. The analysis with the method of “Lagrange multiplier” indicates the equilibrium crystal shape. In the case of non-equilibrium without external fluxes, we employed the “weighted mean curvature” method to mathematically model the inter-facet migration rate for two extreme kinetic cases: “surface diffusion limited” and “surface attachment/detachment limited.” Coupled with external supply of atoms, the self-limited behavior of facet size is theoretically predicted. Moreover, we find that the self-limited stable facet size in trenches of different widths has a specific relationship determined by the surface energy ratio, kinetic rate ratio, and isolated growth rate difference. The two limited cases could be discriminated according to the mathematical fitting of one exponent in this relationship based on the stable facet size in trenches of different widths.

  8. Fermi energy tuning with light to control doping profiles during epitaxy

    SciTech Connect

    Sanders, C. E.; Beaton, D. A.; Reedy, R. C.; Alberi, K.

    2015-05-04

    The influence of light stimulation and photogenerated carriers on the process of dopant surface segregation during growth is studied in molecular beam epitaxially grown Si-doped GaAs structures. The magnitude of surface segregation decreases under illumination by above-bandgap photons, wherein splitting of the quasi Fermi levels reduces the band bending at the growth surface and raises the formation energy of compensating defects that can enhance atomic diffusion. We further show that light-stimulated epitaxy can be used as a practical approach to diminish dopant carry-forward in device structures and improve the performance of inverted modulation-doped quantum wells.

  9. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    DOEpatents

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  10. Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Drozdov, M. N.; Murel, A. V.; Shaleev, M. V.; Novikov, A. V.; Zakharov, N. D.

    2011-06-01

    An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This approach is based on controllable utilization of the effect of Sb segregation. In particular, the sharp dependence of Sb segregation on growth temperature in the range of 300-550 deg. C is exploited. The growth temperature variations between the kinetically limited and maximum segregation regimes are suggested to be utilized in order to obtain selectively doped structures with abrupt doping profiles. It is demonstrated that the proposed technique allows formation of selectively doped Si:Sb layers, including delta ({delta}-)doped layers in which Sb concentrations can be varied from 5 x 10{sup 15} to 10{sup 20} cm{sup -3}. The obtained doped structures are shown to have a high crystalline quality and the short-term growth interruptions, which are needed to change the substrate temperature, do not lead to any significant accumulation of background impurities in grown samples. Realization of the proposed approach requires neither too low (<300 deg. C), nor too high (>600 deg. C) growth temperatures or any special equipment for the MBE machines.

  11. SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

    NASA Astrophysics Data System (ADS)

    Park, Sang-Joon; Hwang, In Chan; Lee, Heung Soon; Yeog Son, Jong; Kim, Hyungjun

    2009-11-01

    Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates. An erratum to this article was added by the author on 18 May 2010. The text of the erratum is appended to the PDF.

  12. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  13. Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

    DOE PAGESBeta

    Nguyen, Binh -Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

    2015-10-08

    Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been exploredmore » before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.« less

  14. Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

    SciTech Connect

    Nguyen, Binh -Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

    2015-10-08

    Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been explored before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.

  15. Selecting windows for energy efficiency

    SciTech Connect

    1997-05-01

    New window technologies have increased energy benefits and comfort, and have provided more practical options for consumers. This selection guide will help homeowners, architects, and builders take advantage of the expanding window market. The guide contains three sections: an explanation of energy-related window characteristics, a discussion of window energy performance ratings, and a convenient checklist for window selection.

  16. Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.

    PubMed

    Robson, M T; Dubrovskii, V G; LaPierre, R R

    2015-11-20

    Experimental data and a model are presented which define the boundary values of V/III flux ratio and growth temperature for droplet-assisted nucleation of InAs semiconductor nanowires in selective-area epitaxy on SiO(x)/Si (111) substrates by molecular beam epitaxy. Within these boundaries, the substrate receives a balanced flux of group III and V materials allowing the growth of vertically oriented nanowires as compared to the formation of droplets or crystallites. PMID:26508403

  17. Selective epitaxial growth of Ge(1 1 0) in trenches using the aspect ratio trapping technique

    NASA Astrophysics Data System (ADS)

    Destefanis, V.; Hartmann, J. M.; Baud, L.; Delaye, V.; Billon, T.

    2010-03-01

    The aim of this study was to assess the efficiency of aspect ratio trapping in improving the crystalline quality of relaxed Ge(1 1 0) layers selectively grown in trenches surrounded by SiO 2. The 400 °C growth of a few hundreds of nanometers thick Ge layers has first been studied on blanket Si(1 1 0) surfaces then in recessed areas of Si(1 1 0) patterned wafers. The influence of 1 min H 2 anneals (in-between 600 and 850 °C) on the surface morphology, crystalline quality and strain state of blanket Ge(1 1 0) layers has notably been quantified. Intermediate annealing temperatures (750 °C) have improved the crystalline quality and increased the macroscopic strain relaxation of those layers, without too high a surface roughening. (1 1 0) Si windows (surrounded by shallow trench isolation) of patterned wafers have then been recessed by ≈300 nm using gaseous HCl, with a definite faceting and a slight roughening of the resulting cavities. Epitaxial lateral overgrowth of Ge has then been implemented in those trenches, followed by 1' H 2 bakes at 750 °C. Chemical mechanical polishing has been used afterwards to get rid of the several hundreds of nm thick Ge layer overflowing on the SiO 2 areas (very reduced dishing and flat Ge(1 1 0) surfaces obtained in the end). The efficiency of aspect ratio trapping in reducing the defect density in those Ge(1 1 0) layers is not obvious. Indeed, some trapping of inclined defects in the SiO 2 sidewalls of narrow Ge(1 1 0) patterns (˜80 nm long) has been evidenced. However, the theoretically unexpected appearance of defects at 90° to the surface (i.e. normal to (1 1 0)) that were consequently not trapped was detrimental to defect density reduction. Those 90° defects may have arisen from interactions of inclined defects with one another. The reduction of the high defect density in relaxed (1 1 0) layers is thus still challenging and requires further investigations.

  18. Efficient Exciton Diffusion and Resonance-Energy Transfer in Multilayered Organic Epitaxial Nanofibers

    PubMed Central

    2015-01-01

    Multilayered epitaxial nanofibers are exemplary model systems for the study of exciton dynamics and lasing in organic materials because of their well-defined morphology, high luminescence efficiencies, and color tunability. We use temperature-dependent continuous wave and picosecond photoluminescence (PL) spectroscopy to quantify exciton diffusion and resonance-energy transfer (RET) processes in multilayered nanofibers consisting of alternating layers of para-hexaphenyl (p6P) and α-sexithiophene (6T) serving as exciton donor and acceptor material, respectively. The high probability for RET processes is confirmed by quantum chemical calculations. The activation energy for exciton diffusion in p6P is determined to be as low as 19 meV, proving p6P epitaxial layers also as a very suitable donor material system. The small activation energy for exciton diffusion of the p6P donor material, the inferred high p6P-to-6T resonance-energy-transfer efficiency, and the observed weak PL temperature dependence of the 6T acceptor material together result in an exceptionally high optical emission performance of this all-organic material system, thus making it well suited, for example, for organic light-emitting devices. PMID:26191119

  19. Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission

    SciTech Connect

    Li, Yuejing; Tong, Yuying; Yang, Guofeng Yao, Chujun; Sun, Rui; Cai, Lesheng; Xu, Guiting; Wang, Jin; Zhang, Qing; Ye, Xuanchao; Wu, Mengting; Wen, Zhiqin

    2015-09-15

    Monolithic color synthesis is demonstrated using InGaN/GaN multiple quantum wells (QWs) grown on GaN microstripes formed by selective area epitaxy on SiO{sub 2} mask patterns. The striped microfacet structure is composed of (0001) and (11-22) planes, attributed to favorable surface polarity and surface energy. InGaN/GaN QWs on different microfacets contain spatially inhomogeneous compositions owing to the diffusion of adatoms among the facets. This unique property allows the microfacet QWs to emit blue light from the (11-22) plane and yellow light from the top (0001) plane, the mixing of which leads to the perception of white light emission.

  20. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    SciTech Connect

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  1. Surface energies for molecular beam epitaxy growth of HgTe and CdTe

    NASA Astrophysics Data System (ADS)

    Berding, M. A.; Krishnamurthy, Srinivasan; Sher, A.

    1991-10-01

    We present results for the surface binding energies for HgTe and CdTe that will serve as input for molecular beam epitaxy growth models. We have found that the surface binding energies are surface orientation dependent and are not simply proportional to the number of first-neighbor bonds being made to the underlying layer. Moreover, because of the possibility of charge transfer between cation and anion surface states, one may have large differences between the binding energy for the first and the last atom in a given layer, and these differences will be different for the narrow-gap, less ionic materials than for the wide gap, ionic materials. We also find that the surface states associated with an isolated surface atom or vacancy are extended in materials with small gaps and small effective masses, and thus call into question the modeling of surface binding by simple pair interactions.

  2. Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    SciTech Connect

    Schmid, H. Borg, M.; Moselund, K.; Cutaia, D.; Riel, H.; Gignac, L.; Breslin, C. M.; Bruley, J.

    2015-06-08

    III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.

  3. Energy: An annotated selected bibliography

    NASA Technical Reports Server (NTRS)

    Blow, S. J. (Compiler); Peacock, R. W. (Compiler); Sholy, J. J. (Compiler)

    1979-01-01

    This updated bibliography contains approximately 7,000 selected references on energy and energy related topics from bibliographic and other data sources from June 1977. Under each subject heading the entries are arranged by the date, with the latest works first. Geothermal, solar, wind, and ocean/water power sources are included. Magnetohydrodynamics and electrohydrodynamics, electric power engineering, automotive power plants, and energy storage are also covered.

  4. In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films

    NASA Astrophysics Data System (ADS)

    Chen, P.; Xu, S. Y.; Zhou, W. Z.; Ong, C. K.; Cui, D. F.

    1999-03-01

    Epitaxial LaNiO3 (LNO) thin films were grown on (001) SrTiO3 substrates by laser molecular-beam epitaxy. The growth process of the LNO films was monitored by in situ reflection high-energy electron diffraction (RHEED). Clear RHEED patterns and the intensity oscillation of RHEED were observed during the epitaxial growth process. The morphology of the films was studied by atomic force microscopy. The results show that the films grown by this method have a nanoscale smooth surface with the root-mean-square surface roughness smaller than 7 nm on an area of 1×1 μm2. X-ray diffraction patterns indicate that the crystalline LNO films exhibited preferred (00l) orientation. The resistivity of the thin film is 0.28 mΩ cm at 278 K and 0.06 mΩ cm at 80 K, respectively.

  5. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    NASA Astrophysics Data System (ADS)

    Aagesen, Larry K.; Coltrin, Michael E.; Han, Jung; Thornton, Katsuyo

    2015-05-01

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  6. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  7. Epitaxial InN/InGaN quantum dots on Si: Cl‑ anion selectivity and pseudocapacitor behavior

    NASA Astrophysics Data System (ADS)

    Rodriguez, Paul E. D. Soto; Mari, Claudio Maria; Sanguinetti, Stefano; Ruffo, Riccardo; Nötzel, Richard

    2016-08-01

    Epitaxial InN quantum dots (QDs) on In-rich InGaN, applied as an electrochemical electrode, activate Cl‑-anion-selective surface attachment, bringing forth faradaic/pseudocapacitor-like behavior. In contrast to traditional pseudocapacitance, here, no chemical reaction of the electrode material occurs. The anion attachment is explained by the unique combination of the surface and quantum properties of the InN QDs. A high areal capacitance is obtained for this planar electrode together with rapid and reversible charge/discharge cycles. With the growth on cheap Si substrates, the InN/InGaN QD electrochemical electrode has great potential, opening up new application fields for III–nitride semiconductors.

  8. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE PAGESBeta

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  9. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    SciTech Connect

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  10. All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning

    SciTech Connect

    Ahn, J.; Lu, D.; Deppe, D.G.

    2005-01-10

    An approach is presented to fabricate a current- and mode-confined vertical-cavity surface-emitting laser that is all-epitaxial and lithographically defined. The device uses selective Fermi level pinning to self-align the electrical injection to a mode-confining intracavity phase-shifting mesa.

  11. In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

    SciTech Connect

    Ohkouchi, Shunsuke; Nakamura, Yusui; Ikeda, Naoki; Sugimoto, Yoshimasa; Asakawa, Kiyoshi

    2007-07-15

    We have developed an in situ mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions. This mask can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; thus, device structures can be fabricated without exposing the sample surfaces to air. Moreover, this mask enables the observation of reflection high-energy electron diffraction during growth with the mask positioned on the sample holder and provides for the formation of marker layers for ensuring alignment in the processes following the selective growth. To explore the effectiveness of the proposed in situ mask, we used it to grow quantum dot (QD) structures in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.30 {mu}m and a linewidth of 30 meV at room temperature. The proposed technique can be applied for the integration of microstructures into optoelectronic functional devices.

  12. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fahed, M.; Desplanque, L.; Coinon, C.; Troadec, D.; Wallart, X.

    2015-07-01

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  13. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    PubMed

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness. PMID:26134951

  14. Energy: An annotated selected bibliography

    NASA Technical Reports Server (NTRS)

    Blow, S. J. (Compiler); Peacock, R. W. (Compiler); Sholy, J. J. (Compiler)

    1979-01-01

    This updated bibliography contains approximately 7,000 selected references on energy and energy related topics from bibliographic and other data sources from June 1977. Under each subject heading the entries are arranged by the data, with the latest works first. Subject headings include: resources supply/demand, and forecasting; policy, legislation, and regulation; environment; consumption, conservation, and economics; analysis, systems, and modeling, and information sources and documentation. Fossil fuels, hydrogen and other fuels, liquid/solid wastes and biomass, waste heat utilization, and nuclear power sources are also included.

  15. Low-energy electron diffraction investigation of epitaxial growth: Pt and Pd on Pd(100)

    SciTech Connect

    Flynn-Sanders, D.

    1990-09-21

    We investigate the epitaxial growth of Pt and Pd and Pd(100) via spot profile analysis using conventional low-energy electron diffraction (LEED). We resolve a central-spike and diffuse component in the spot profiles, reflecting the layer-occupations and pair-correlations, respectively. Kinetic limitations inhibit layer-by-layer growth at low temperatures. Our data suggest diffusion switches on at ca. 150 K for Pt and ca. 170 K for Pd indicating activation barriers to surface diffusion of ca. 10 and ca. 13 kcal/mol, respectively. To clarify the role of diffusion in determining the resulting film morphology, we develop a growth model that incorporates the adsorption-site requirement and predicts intensity oscillations. We present a new procedure to experimentally determine out-of-phase scattering conditions. At these energies, ring-structure is evident in the profiles during Pd growth between ca. 200 and 400 K. We report ring intensity oscillations as a function of coverage, which demonstrate the filling of individual layers.

  16. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Bae, Si-Young; Lee, Ho-Jun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-05-01

    In this paper, we discuss the influence of parameters such as type of carrier gas and NH3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi-quantum wells (MQWs) with a radial structure.

  17. TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Liu, Lianci; Myasishchev, Denis; Kuryatkov, Vladimir; Nikishin, Sergey; Holtz, Mark; Harris, Rusty

    2011-10-01

    We describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical vapor deposition for producing a hard mask. The silicon dioxide is patterned using photo- and electron-beam lithography for micro- and nano-fins, respectively, followed by wet etching in hydrofluoric acid. Wet etching to produce the silicon fins is carried out using tetramethyl ammonium hydroxide (TMAH) diluted with isopropyl alcohol (IPA). Atomic force microscopy and scanning electron microscopy are used to determine morphology including the surface roughness of the area between fins and the etching rate of silicon. We tune the etching time, temperature, and percentage of IPA in order to get the best surface on both (111) and (110) planes. Adding IPA is found to alter the etch rate and improve the surface between the fins without adversely affecting the sidewall morphology.

  18. Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

    NASA Astrophysics Data System (ADS)

    Krylyuk, Sergiy; Paramanik, Dipak; King, Matt; Motayed, Abhishek; Ha, Jong-Yoon; Bonevich, John E.; Talin, Alec; Davydov, Albert V.

    2012-12-01

    We present large-area, vertically aligned GaN n-core and p-shell structures on silicon substrates. The GaN pillars were formed by inductively coupled plasma etching of lithographically patterned n-GaN epitaxial layer. Mg-doped p-GaN shells were formed using selective overgrowth by halide vapor phase epitaxy. The diameter of the cores ranged from 250 nm to 10 μm with varying pitch. The p-shells formed truncated hexagonal pyramids with {11¯01} side-facets. Room-temperature photoluminescence and Raman scattering measurements indicate strain-relaxation in the etched pillars and shells. Cross-sectional transmission electron microscopy revealed dislocation bending by 90° at the core-shell interface and reduction in their density in the shells.

  19. RAPID COMMUNICATION: Selective epitaxial fabrication of TBCCO microstrip devices and structures

    NASA Astrophysics Data System (ADS)

    Stevens, C. J.; Grovenor, C. R. M.; Edwards, D. J.

    2000-12-01

    Tl-based high-temperature superconductors have attractive properties for applications in a range of high-frequency analogue and digital technologies. While the patterning of Tl-containing superconductors is a vital part of thin-film device preparation, the high degree of toxicity of Tl makes conventional patterning of Tl-containing films, which produce some toxic waste products, unattractive. Patterning of a Tl-free precursor before thallination is possible; but the precursor films can react with aqueous solutions, resulting in degraded superconductor properties. In order to achieve a high-resolution pattern with no chemical processing of the Tl-containing films and no exposure of precursor material to water we have successfully developed a selective growth technique based on patterning a buried SiN layer.

  20. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  1. A comparison between fine grain and epitaxial superconducting tunneling junctions for use as high energy resolution x-ray detectors

    NASA Astrophysics Data System (ADS)

    Saulnier, Gregory Gerard

    1994-01-01

    Superconducting tunneling junctions (STJ) show great promise in high energy resolution x-ray spectroscopy for use in x-ray astrophysics. An STJ is a sandwich of an insulator between two superconductors (S-I-S). Such a device has an intrinsic energy resolution an order of magnitude better than any existing semiconductor device, including the charge coupled device (CCD). The potential impact on x-ray astrophysics is enormous, with possible future use on sounding rockets and other as yet undefined satellite missions. This thesis compares two STJ's that have been fabricated using Nb/Al/Al2O3/Nb in the same ultra-high vacuum chamber with the same layer thicknesses with the only difference being that the base layers are either fine grain (polycrystalline) or epitaxial. The testing was done at temperatures between 0.4 K and 4.2 K. The comparison included subgap spectra from an Fe-55 x-ray source. The findings showed that the fine grain junction had a tunnel barrier of much higher quality and yielded higher energy resolution. It was determined that the epitaxial junction was much more sensitive to substrate events. Two peaks were found in the x-ray spectra. Each peak was attributed to x-ray interactions within one or the other superconducting films of the junction.

  2. Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask

    NASA Astrophysics Data System (ADS)

    Li, C.; Losee, P.; Seiler, J.; Bhat, I.; Chow, T. P.

    2005-04-01

    Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high-temperature mask has been demonstrated. Nomarski optical microscopy and scanning electron microscopy (SEM) were used to characterize selective growth of SiC. In addition, 250-µm, square-shaped, p-n junction diodes by selective n-type epitaxial growth on a p-type epilayer were fabricated. The refilled fingers with different width were designed to vary the periphery/area (P/A) ratio. The effects of P/A ratio on the current-voltage (J-V) characteristics have been investigated. The ideality factor extracted from J-V characteristics is ≈2 at a temperature range of 25-275°C, which indicates that the Shockley-Read-Hall recombination is the dominant mechanism in the conduction region. The reverse leakage current does not show dependence on P/A ratio for trench-refilled diodes. The room-temperature reverse leakage-current density at 100 V is less than 3.5×10-7 A/cm2 for all diodes. Also, the reverse leakage current does not increase significantly with temperature up to 275°C. The breakdown voltages measured at room temperature are about 450 V and 400 V for diodes without and with fingers, respectively.

  3. Large-scale self-assembled epitaxial growth of highly-ordered three-dimensional micro/nano single-crystalline PbSe pyramid arrays by selective chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Qiu, Jijun; Weng, Binbin; Li, Lin; Li, Xiaomin; Shi, Zhisheng

    2015-05-01

    Highly ordered three-dimensional micro- and nano- PbSe pyramid arrays were synthesized by using selective epitaxial self-assembled chemical bath deposition method. Each pyramid consists of a very sharp (111) tip with six smooth equivalent {100} facets. Every (100) facet forms an angle of about 54.7° with respect to the (111) facet. The structural features including pyramidal size and period could be precisely tailored by pre-patterned Au mask and etching time. Pyramids are self-assembled on the confined positions by the dual functions of one-dimensional and two-dimensional oriented attachment mechanisms along [110] directions on the (111) surface, following the Gibbs-Curie-Wulff minimum energy principle. This method could effectively create large, bottom-up 3D pyramidal surface patterns in a cost-effective and time-saving manner, which has potential applications in infrared photoconductors, solar cells and light emitting enhancement for display, etc.

  4. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  5. Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

    NASA Technical Reports Server (NTRS)

    Jones, Stephen H.; Lau, Kei May; Pouch, John J.

    1988-01-01

    The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

  6. Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

    NASA Astrophysics Data System (ADS)

    Jones, Stephen H.; Lau, Kei May; Pouch, John J.

    1988-07-01

    The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

  7. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    NASA Astrophysics Data System (ADS)

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-01

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  8. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    SciTech Connect

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-28

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  9. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

    PubMed Central

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A.; Kuk, Young

    2016-01-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk. PMID:27503427

  10. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.

    PubMed

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A; Kuk, Young

    2016-01-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk. PMID:27503427

  11. Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

    NASA Astrophysics Data System (ADS)

    Hwang, Beomyong; Hwang, Jeongwoon; Yoon, Jong Keon; Lim, Sungjun; Kim, Sungmin; Lee, Minjun; Kwon, Jeong Hoon; Baek, Hongwoo; Sung, Dongchul; Kim, Gunn; Hong, Suklyun; Ihm, Jisoon; Stroscio, Joseph A.; Kuk, Young

    2016-08-01

    Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.

  12. Thermophotovoltaic energy converters based on thin film selective emitters and InGaAs photovoltaic cells

    SciTech Connect

    Fatemi, N.S.; Hoffman, R.H.; Wilt, D.M.; Lowe, R.A.; Garverick, L.M.; Scheiman, D.

    1996-02-01

    This paper presents the results of an investigation to demonstrate thermophotovoltaic energy conversion using InGaAs photovoltaic cells, yttrium-aluminum-garnet- (YAG-) based selective emitters, and bandpass/reflector filters, with the heat source operating at 1100{degree}C. InGaAs cells were grown on InP by organometallic vapor phase epitaxy with bandgaps of 0.60 and 0.75 eV and coupled to Ho-, Er-, and Er-Tm-doped YAG selective emitters. Infrared reflector and/or shortpass filters were also used to increase the ratio of in-band to out-of-band radiation from the selective emitters. Efficiencies as high as 13.2{percent} were recorded for filtered converters. {copyright} {ital 1996 American Institute of Physics.}

  13. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  14. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  15. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V. Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V.; Spirin, K. E.

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  16. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

    PubMed Central

    2011-01-01

    Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices. PMID:21711862

  17. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  18. Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

    SciTech Connect

    Dharmaraj, P.; Jeganathan, K.; Parthiban, S.; Kwon, J. Y.; Gautam, S.; Chae, K. H.; Asokan, K.

    2014-11-03

    We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.

  19. Renewable energy recovery through selected industrial wastes

    NASA Astrophysics Data System (ADS)

    Zhang, Pengchong

    Typically, industrial waste treatment costs a large amount of capital, and creates environmental concerns as well. A sound alternative for treating these industrial wastes is anaerobic digestion. This technique reduces environmental pollution, and recovers renewable energy from the organic fraction of those selected industrial wastes, mostly in the form of biogas (methane). By applying anaerobic technique, selected industrial wastes could be converted from cash negative materials into economic energy feed stocks. In this study, three kinds of industrial wastes (paper mill wastes, brown grease, and corn-ethanol thin stillage) were selected, their performance in the anaerobic digestion system was studied and their applicability was investigated as well. A pilot-scale system, including anaerobic section (homogenization, pre-digestion, and anaerobic digestion) and aerobic section (activated sludge) was applied to the selected waste streams. The investigation of selected waste streams was in a gradually progressive order. For paper mill effluents, since those effluents contain a large amount of recalcitrant or toxic compounds, the anaerobic-aerobic system was used to check its treatability, including organic removal efficiency, substrate utilization rate, and methane yield. The results showed the selected effluents were anaerobically treatable. For brown grease, as it is already well known as a treatable substrate, a high rate anaerobic digester were applied to check the economic effect of this substrate, including methane yield and substrate utilization rate. These data from pilot-scale experiment have the potential to be applied to full-scale plant. For thin stillage, anaerobic digestion system has been incorporated to the traditional ethanol making process as a gate-to-gate process. The performance of anaerobic digester was applied to the gate-to-gate life-cycle analysis to estimate the energy saving and industrial cost saving in a typical ethanol plant.

  20. Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

    NASA Astrophysics Data System (ADS)

    Ganapathy, Sasikala; Kurimoto, Makoto; Thilakan, Periyasamy; Uesugi, Kasturi; Suemune, Ikuo; Machida, Hideaki; Shimoyama, Norio

    2003-10-01

    The in situ observation of reflection high-energy electron diffraction (RHEED) oscillations during the metalorganic-molecular-beam epitaxy deposition of AlAs and AlGaAs epitaxial layers is reported. In situ RHEED oscillations as well as atomic force microscopy measurements confirmed the layer-by-layer growth of the AlAs as well as the AlGaAs layers on GaAs substrates. RHEED oscillation was successfully applied to the precise control of the AlAs/GaAs superlattices and of the alloy compositions in the AlGaAs alloys. High-resolution x-ray diffraction and Hall effect measurements revealed the unintentional doping of carbon into the AlGaAs layers, but it was found that the increase in the V/III ratio is able to reduce the carbon incorporation.

  1. Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

    NASA Astrophysics Data System (ADS)

    Liu, H. J.; Jiao, L.; Xie, L.; Yang, F.; Chen, J. L.; Ho, W. K.; Gao, C. L.; Jia, J. F.; Cui, X. D.; Xie, M. H.

    2015-09-01

    Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.

  2. Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

    NASA Astrophysics Data System (ADS)

    Li, Bin; Guo, Xin; Ho, Wingkin; Xie, Maohai

    2015-08-01

    Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi2Se3 has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi2Se3 by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi2Se3 grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van deer Waals interaction between Bi2Se3 quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi2Se3 deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi2Se3 during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi2Se3 is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

  3. EDITORIAL: Epitaxial graphene Epitaxial graphene

    NASA Astrophysics Data System (ADS)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  4. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  5. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

    SciTech Connect

    Rozhavskaya, M. M. Lundin, V. V.; Zavarin, E. E.; Troshkov, S. I.; Brunkov, P. N.; Tsatsulnikov, A. F.

    2013-03-15

    The influence of the carrier gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in stripe windows oriented along the crystallographic direction Left-Pointing-Angle-Bracket 11-bar00 Right-Pointing-Angle-Bracket GaN for various widths of the mask between the stripes is studied. It is shown that the addition of nitrogen in the reactor atmosphere leads to changes in the form of the stripes in the case of wide (40 {mu}m) mask from a rectangular form restricted by a {l_brace}1 1-bar20{r_brace} lateral face to a trapezoidal form restricted by a {l_brace}1 1-bar22{r_brace} lateral face. It is also shown that during growth in the nitrogen-hydrogen mixture, the gallium flow starts to considerably affect the form of the growing stripes. It is shown that the process is significantly unstable, which leads to a noticeable variation in the form type as the transverse section of the stripe increases.

  6. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ˜ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  7. Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide.

    PubMed

    Yu, Haohai; Chen, Xiufang; Zhang, Huaijin; Xu, Xiangang; Hu, Xiaobo; Wang, Zhengping; Wang, Jiyang; Zhuang, Shidong; Jiang, Minhua

    2010-12-28

    Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics. PMID:21058692

  8. Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well

    NASA Astrophysics Data System (ADS)

    Achermann, Marc; Petruska, Melissa A.; Kos, Simon; Smith, Darryl L.; Koleske, Daniel D.; Klimov, Victor I.

    2004-06-01

    As a result of quantum-confinement effects, the emission colour of semiconductor nanocrystals can be modified dramatically by simply changing their size. Such spectral tunability, together with large photoluminescence quantum yields and high photostability, make nanocrystals attractive for use in a variety of light-emitting technologies-for example, displays, fluorescence tagging, solid-state lighting and lasers. An important limitation for such applications, however, is the difficulty of achieving electrical pumping, largely due to the presence of an insulating organic capping layer on the nanocrystals. Here, we describe an approach for indirect injection of electron-hole pairs (the electron-hole radiative recombination gives rise to light emission) into nanocrystals by non-contact, non-radiative energy transfer from a proximal quantum well that can in principle be pumped either electrically or optically. Our theoretical and experimental results indicate that this transfer is fast enough to compete with electron-hole recombination in the quantum well, and results in greater than 50 per cent energy-transfer efficiencies in the tested structures. Furthermore, the measured energy-transfer rates are sufficiently large to provide pumping in the stimulated emission regime, indicating the feasibility of nanocrystal-based optical amplifiers and lasers based on this approach.

  9. Epitaxial jumps

    NASA Astrophysics Data System (ADS)

    Stura, Enrico A.; Charbonnier, Jean-Baptiste; Taussig, Michael J.

    1999-01-01

    By a combination of seeding and changing the growth medium new crystal forms may be obtained. The procedure is called an epitaxial jump. The seeds used in the seeding are from crystals of the same or related protein. For example, seeding followed by an increase in precipitant concentration has given higher diffracting crystals of the complex between tissue factor, factor VIIa and the inhibitor 5L15. For both an anti-steroid antibody fragment and human placental alkaline phosphatase a polymorph was obtained by changing a low molecular weight polyethylene glycol (PEG) with one of a higher molecular weight. In the first case, in one direction and in the latter case, in the other direction. A change of conformation could also have contributed to this. A DsbA mutant illustrates how such changes, result in a different packing from that for the wild-type. Seeding from crystals of wild-type protein yields crystals which appear to be morphologically different from both the wild-type and mutant crystal forms.

  10. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  11. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation

    NASA Astrophysics Data System (ADS)

    Pantha, Bed Nidhi

    III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as deep ultraviolet (DUV) photodetectors, solar cells, visible emitters, thermometric (TE) power generators, etc. Structural and optical properties in thicker AlN epilayers were found to be better than those in thinner AlN epilayers. Full-width at half maxima (FWHM) of x-ray diffraction (XRD) rocking curves as small as 63 and 437 arcsec were measured at (002) and (102) reflections, respectively in a thick AlN epilayer (4 mum). The dark current of the fabricated AlN detectors decreases drastically as AlN epilayer thickness increases. DUV photoluminescence (PL) spectroscopy and x-ray diffraction (XRD) measurements were employed to study the effect of biaxial stress in AlN epilayers grown on different substrates. Stress-induced band gap shift of 45 meV/GPa was obtained in AlN epilayers. The potential of InGaN alloys as TE materials for thermopower generation has been investigated. It was found that as In content increases, thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36Ga0.64N alloy, which is comparable to that of SiGe based alloys. Single phase InxGa1- xN alloys inside the theoretically predicted miscibility gap region (x = 0.4 to 0.7) were successfully synthesized. A single peak of XRD o-2theta scans of the (002) plane in InGaN alloys confirms that there is no phase separation. Electrical properties and surface morphologies were found to be reasonably good. It was found that growth rate should be high enough (>400 nm/hr) to achieve high quality and single phase InxGa1-xN alloys in this miscibility gap region. Mg-doped InxGa1- xN alloys were synthesized and characterized by Hall-effect and PL measurements for their application as

  12. Strain in epitaxial Bi{sub 2}Se{sub 3} grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

    SciTech Connect

    Li, Bin; Guo, Xin; Ho, Wingkin; Xie, Maohai

    2015-08-24

    Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

  13. Energy use in selected metal casting facilities - 2003

    SciTech Connect

    Eppich, Robert E.

    2004-05-01

    This report represents an energy benchmark for various metal casting processes. It describes process flows and energy use by fuel type and processes for selected casting operations. It also provides recommendations for improving energy efficiency in casting.

  14. Cassava as an energy source: a selected bibliography

    SciTech Connect

    Sherman, C.

    1980-01-01

    This selected bibliography includes 250 articles on cassava as a potential energy source. Factors included are things which influence cassava growth; such as weeding, fertilizer, diseases and genetic selection, as well as the conversion of cassava to ethanol. (DP)

  15. Assessment of Selected Energy Efficiency Policies

    EIA Publications

    2005-01-01

    This report responds to a request from Senator Byron L. Dorgan, asking the Energy Information Administration (EIA) to undertake a quantitative analysis of a variety of energy efficiency policies using assumptions provided by the Alliance to Save Energy (ASE).

  16. Band Gap Engineering of PbI2 by Incommensurate Van der Waals Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, Yiping; Shi, Jian

    Van der Waals epitaxial growth had been thought to have trivial contribution on inducing substantial epitaxial strain in thin films due to its weak nature of Van der Waals interfacial energy. Due to this, electrical and optical structure engineering via Van der Waals epitaxial strain has been rarely studied. However, by appropriate film-substrate selection, we show that significant band structure engineering could be achieved in a soft thin film material PbI2 via Van der Waals epitaxy. The thickness dependent photoluminescence of single crystal PbI2 flakes was studied and attributed to the substrate-film coupling effect via incommensurate Van der Waals epitaxy. It is proposed that the Van der Waals strain is resulted from the soft nature of PbI2 and large Van der Waals interaction due to the involvement of heavy elements. Such strain plays vital roles in modifying the band gap of PbI2. The deformation potential theory is used to quantitatively unveil the correlation between thickness, strain and band gap change. Our hypothesis is confirmed by the subsequent mechanical bending test and Raman characterization.

  17. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO{sub 3} by rutile TiO{sub 2} layer on hexagonal GaN

    SciTech Connect

    Luo, W. B.; Zhu, J.; Chen, H.; Wang, X. P.; Zhang, Y.; Li, Y. R.

    2009-11-15

    Epitaxial SrTiO{sub 3} films were fabricated by laser molecular beam epitaxy on bare and TiO{sub 2} buffered GaN(0002), respectively. The whole deposition processes were in situ monitored by reflection high energy electron diffraction (RHEED). X-ray diffraction (XRD) was carried out to study the growth orientation and crystalline quality of STO films. The interfacial characters and epitaxial relationships were also investigated by high revolution transition electron microscope and selected area electron diffraction (SAED). According to the RHEED observation, the lowest epitaxy temperature of STO on TiO{sub 2} buffered GaN was decreased compared with the direct deposited one. The epitaxial relationship was (111)[110]STO//(0002)[1120]GaN in both cases as confirmed by RHEED, XRD, and SAED. The full width at half maximum of omega-scan and PHI-scan of STO on TiO{sub 2} buffered GaN was reduced compared with that deposited on bare GaN, indicating that epitaxial quality of STO film is improved by inserting TiO{sub 2} layer. In summary, the lattice mismatch was reduced by inserting rutile TiO{sub 2}. As a result, the crystalline temperature was reduced and enhanced epitaxial quality of STO thin film was obtained.

  18. A Reflection High Energy Electron Diffraction-Reflectance Anisotropy Spectroscopy Study of Silicon Growth Dynamics During Gas Source Molecular Beam Epitaxy from Silanes

    NASA Astrophysics Data System (ADS)

    Joyce, B. A.; Zhang, J.; Taylor, A. G.; Lees, A. K.

    Molecular beam epitaxy (MBE) provides an ideal experimental vehicle for the in situ study of thin film growth dynamics. By using a combination of reflection high energy electron diffraction (RHEED) and reflectance anisotropy (difference) spectroscopy [RA(D)S], it is possible to separate morphological (long range order) and local electronic structure effects, which we demonstrate with the growth of silicon films from disilane (Si2H6) on Si(001) (2 × 1)+(1 × 2) reconstructed surfaces. The rate-limiting step in Si growth from both monosilane (SiH4) and disilane is the desorption of molecular hydrogen and we have found using RAS that, over a significant range of temperature and coverage, hydrogen desorption follows zeroth order kinetics as the result of a step-mediated process. Finally, we show how this influences the growth rate on substrates of differing degrees of vicinality.

  19. Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Queralt, I.; Ibañez, J.; Marguí, E.; Pujol, J.

    2010-07-01

    The importance of thin films in modern high technology products, such as semiconductors, requires fast and non-destructive analysis. A methodology to determine the thickness of single layers with benchtop energy dispersive X-ray fluorescence (EDXRF) instrumentation is described and tested following analytical validation criteria. The experimental work was carried out on gallium nitride thin films epitaxially grown on sapphire substrate. The results of samples with layers in the range from 400 to 1000 nm exhibit a good correlation with the layer thickness determined by optical reflectance. Spectral data obtained using thin layered samples indicate the possibility to precisely evaluate layer thickness from 5 nm, with a low relative standard deviation (RSD < 2%) of the results. In view of the limits of optical reflectance for very thin layer determination, EDXRF analysis offers the potential for the thickness determination of such kind of samples.

  20. Method of forming silicon structures with selectable optical characteristics

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); Schowalter, Leo (Inventor)

    1993-01-01

    Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

  1. Research and Energy Efficiency: Selected Success Stories

    DOE R&D Accomplishments Database

    Garland, P. W.; Garland, R. W.

    1997-06-26

    Energy use and energy technology play critical roles in the U.S. economy and modern society. The Department of Energy (DOE) conducts civilian energy research and development (R&D) programs for the purpose of identifying promising technologies that promote energy security, energy efficiency, and renewable energy use. DOE-sponsored research ranges from basic investigation of phenomena all the way through development of applied technology in partnership with industry. DOE`s research programs are conducted in support of national strategic energy objectives, however austere financial times have dictated that R&D programs be measured in terms of cost vs. benefit. In some cases it is difficult to measure the return on investment for the basic "curiosity-driven" research, however many applied technology development programs have resulted in measurable commercial successes. The DOE has published summaries of their most successful applied technology energy R&D programs. In this paper, we will discuss five examples from the Building Technologies area of the DOE Energy Efficiency program. Each story will describe the technology, discuss the level of federal funding, and discuss the returns in terms of energy savings, cost savings, or national economic impacts.

  2. Observation of different reflected high-energy electron diffraction patterns during atomic layer epitaxy growth of CdTe epilayers

    NASA Astrophysics Data System (ADS)

    Faschinger, W.; Juza, P.; Sitter, H.

    1991-12-01

    We present the first RHEED observations during atomic layer epitaxy growth of CdTe on GaAs substrates. The evolution of the RHEED pattern shows that, despite the large lattice mismatch, growth becomes two-dimensional after the deposition of a few monolayers. We observe intensity variations of two RHEED spots under surface resonance conditions and show that this new approach is superior to the observation of the specular spot for the measurement of surface coverages and adsorption kinetics. From the variation of the spot intensities with substrate temperature, we deduce that the Cd and Te surface coverages drop to 0.5 at substrate temperatures higher than 315°C.

  3. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  4. Selected Energy Management Options for Small Business and Local Government.

    ERIC Educational Resources Information Center

    Wert, Jonathan M.; Worthington, Barry K.

    This document is a checklist of 257 energy management options for small business and local government. The energy management options are categorized under: (1) Energy management strategies; (2) Buildings; (3) Lighting; (4) Water; (5) Waste operations; (6) Equipment; (7) Transportation; and (8) Food preparation. To select options for…

  5. Theoretical minimum energies to produce steel for selected conditions

    SciTech Connect

    Fruehan, R. J.; Fortini, O.; Paxton, H. W.; Brindle, R.

    2000-03-01

    An ITP study has determined the theoretical minimum energy requirements for producing steel from ore, scrap, and direct reduced iron. Dr. Richard Fruehan's report, Theoretical Minimum Energies to Produce Steel for Selected Conditions, provides insight into the potential energy savings (and associated reductions in carbon dioxide emissions) for ironmaking, steelmaking, and rolling processes (PDF 459 KB).

  6. Solar energy recorder. [for converter site selection

    NASA Technical Reports Server (NTRS)

    Lollar, R. B.; Mandt, R. R.

    1974-01-01

    A serious obstacle to the large-scale terrestrial application of solar energy lies in the scarcity of reliable data on the amount of solar energy at candidate converter sites. This paper describes a system designed to monitor and record, automatically, the values of the direct and total (sun and sky) solar radiation which would be seen by either tracking or fixed-type solar converters. A further pressing need addressed by the system is the means for efficiency testing and evaluation of solar cells, solar collectors and solar concentrator systems, under outdoor exposure to natural sunlight and weather conditions for extended periods. The design was accomplished in support of the Marshall Space Flight Center, NASA, where design concepts and materials for large-scale terrestrial solar energy converters are currently being evaluated.

  7. Wind Energy Developments: Incentives In Selected Countries

    EIA Publications

    1999-01-01

    This paper discusses developments in wind energy for the countries with significant wind capacity. After a brief overview of world capacity, it examines development trends, beginning with the United States - the number one country in wind electric generation capacity until 1997.

  8. Energy dissipation channels affecting photoluminescence from resonantly excited Er{sup 3+} ions doped in epitaxial ZnO host films

    SciTech Connect

    Akazawa, Housei; Shinojima, Hiroyuki

    2015-04-21

    We identified prerequisite conditions to obtain intense photoluminescence at 1.54 μm from Er{sup 3+} ions doped in ZnO host crystals. The epitaxial ZnO:Er films were grown on sapphire C-plane substrates by sputtering, and Er{sup 3+} ions were resonantly excited at a wavelength of 532 nm between energy levels of {sup 4}I{sub 15/2} and {sup 2}H{sub 11/2}. There is a threshold deposition temperature between 500 and 550 °C, above which epitaxial ZnO films become free of miss-oriented domains. In this case, Er{sup 3+} ions are outside ZnO crystallites, having the same c-axis lattice parameters as those of undoped ZnO crystals. The improved crystallinity was correlated with enhanced emissions peaking at 1538 nm. Further elevating the deposition temperature up to 650 °C generated cracks in ZnO crystals to relax the lattice mismatch strains, and the emission intensities from cracked regions were three times as large as those from smooth regions. These results can be consistently explained if we assume that emission-active Er{sup 3+} ions are those existing at grain boundaries and bonded to single-crystalline ZnO crystallites. In contrast, ZnO:Er films deposited on a ZnO buffer layer exhibited very weak emissions because of their degraded crystallinity when most Er{sup 3+} ions were accommodated into ZnO crystals. Optimizing the degree of oxidization of ZnO crystals is another important factor because reduced films suffer from non-radiative decay of excited states. The optimum Er content to obtain intense emissions was between 2 and 4 at. %. When 4 at. % was exceeded, the emission intensity was severely attenuated because of concentration quenching as well as the degradation in crystallinity. Precipitation of Er{sub 2}O{sub 3} crystals was clearly observed at 22 at. % for films deposited above 650 °C. Minimizing the number of defects and impurities in ZnO crystals prevents energy dissipation, thus exclusively utilizing the excitation energy to emissions from

  9. Selection of promising sites for magma energy experiments

    SciTech Connect

    Carson, C.C.

    1985-01-01

    The Long Valley and Coso Hot Springs areas of California have been identified as the most promising sites for conducting a magma energy extraction experiment. These two locations were selected from among the potential sites on the basis of several factors that are critical to the success of the proposed long-term energy extraction experiment. These factors include the likelihood of the existence of shallow magma targets as well as several other drilling, energy extraction and programmatic considerations. As the magma energy extraction program continues, these sites will be analyzed in detail so that one can be selected as the site for the planned magma experiment.

  10. Tissue Characterization Using Energy-Selective Computed Tomography

    NASA Astrophysics Data System (ADS)

    Alvarez, Robert E.; Marshall, William H.; Lewis, Roger

    1981-07-01

    Energy-selective computed tomography has several important properties useful for in-vivo tissue characterization. Most importantly, it produces more information than conventional computed tomography. This information can be considered to be an added dimension which can be used to eliminate the ambiguities in conventional CT data. The noise in energy-selective computed tomography is also two dimensional and an un-correlated coordinate system can be defined which is needed for studying the capabilities of the technique for characterizing tissues. By using the calibration material basis set, the information from energy-selective CT can be extracted with extreme accuracy. Our preliminary experiments indicate that the technique is accurate enough to characterize the difference between gray and white matter. Most conventional systems have difficulty in distinguishing these materials, much less characterizing the reason for their differing attenuation. Thus energy-selective CT has the promise of providing extremely accurate tissue characterization based on its physical properties.

  11. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L.

    2010-12-01

    We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial InxGa1-xAs (x˜0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

  12. Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers

    SciTech Connect

    Karr, Brian W.; Cahill, David G.; Petrov, I.; Greene, J. E.

    2000-06-15

    Ultrahigh vacuum scanning tunneling microscopy (STM) is used to characterize the surface morphology of TiN(001) epitaxial layers grown by dc reactive magnetron sputtering at growth temperatures of T{sub s}=650 and T{sub s}=750 degree sign C. An auxiliary anode is used to bias the N{sub 2} plasma and produce a large flux of low-energy N{sub 2}{sup +} ions that bombard the film surface during growth: the ratio of the N{sub 2}{sup +} flux to the Ti growth flux is {approx_equal}25. At ion energies E{sub i} near the threshold for the production of bulk defects (E{sub i}=43 eV and T{sub s}=650 degree sign C), ion bombardment decreases the amplitude of the roughness, decreases the average distance between growth mounds, and reduces the sharpness of grooves between growth mounds. The critical island radius for second layer nucleation R{sub c} is approximately 12 and 17 nm at growth temperatures of 650 and 750 degree sign C respectively; at 650 degree sign C, R{sub c} is reduced to (approx =)10 nm by ion bombardment. (c) 2000 The American Physical Society.

  13. Energy and daylight performance of angular selective glazings

    SciTech Connect

    Sullivan, R.; Beltran,; Lee, E.S.; Rubin, M.; Selkowitz, S.E.

    1998-11-01

    This paper presents the results of a study investigating the energy and daylight performance of anisotropic angular selective glazings. The DOE-2.1E energy simulation program was used to determine the annual cooling, lighting and total electricity use, and peak electric demand. RADIANCE, a lighting simulation program, was used to determine daylight illuminance levels and distribution. We simulated a prototypical commercial office building module located in Blythe, California. We chose three hypothetical conventional windows for comparison: a single-pane tinted window, a double-pane low-E window, and a double-pane spectrally selective window. Daylighting controls were used. No interior shades were modeled in order to isolate the energy effects of the angular selective glazing. Our results show that the energy performance of the prototype angular selective windows is about the same as conventional windows for a 9.14 m (30 ft) deep south-facing perimeter zone with a large-area window in the hot, sunny climate of Blythe. It is theoretically possible to tune the angular selectivity of the glazing to achieve annual cooling energy reductions of 18%, total electricity use reductions of 15%, and peak electric demand reductions of 11% when compared to a conventional glazing with the same solar-optical properties at normal incidence. Angular selective glazings can provide more uniformly distributed daylight, particularly in the area next to the window, which will result in a more visually comfortable work environment.

  14. Screening and selection of lignocellulosic crops for energy

    SciTech Connect

    Turhollow, A.F.; Cushman, J.H.; Elmore, J.L.; Johnston, J.W.

    1985-01-01

    The Department of Energy's Herbaceous Energy Crops Program at Oak Ridge National Laboratory is beginning its research on lignocellulosic energy crops with five studies in the Southeast and Midwest/Lakes regions. Early objectives for these studies include selecting species that show promise on marginal croplands typical of the regions, determining productivity rates under various levels of management, defining cost-effective and environmentally sound production systems for each region, and identifying the most promising means of reducing costs. 2 tabs.

  15. Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Tsukamoto, Takahiro; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki; Suda, Yoshiyuki

    2015-02-01

    The mechanism of Sn surface segregation during the epitaxial growth of GeSn on Si (001) substrates was investigated by Auger electron spectroscopy and energy dispersive X-ray spectroscopy. Sn surface segregation depends on the growth temperature and Sn content of GeSn layers. During Sn surface segregation, Sn-rich nanoparticles form and move on the surface during the deposition, which results in a rough surface owing to facet formation. The Sn-rich nanoparticles moving on the surface during the deposition absorb Sn from the periphery and yield a lower Sn content, not on the surface but within the layer, because the Sn surface segregation and the GeSn deposition occur simultaneously. Sn surface segregation can occur at a lower temperature during the deposition compared with that during postannealing. This suggests that the Sn surface segregation during the deposition is strongly promoted by the migration of deposited Ge and Sn adatoms on the surface originating from the thermal effect of substrate temperature, which also suggests that limiting the migration of deposited Ge and Sn adatoms can reduce the Sn surface segregation and improve the crystallinity of GeSn layers.

  16. Probing optical band gaps at the nanoscale in NiFe₂O₄ and CoFe₂O₄ epitaxial films by high resolution electron energy loss spectroscopy

    SciTech Connect

    Dileep, K.; Loukya, B.; Datta, R.; Pachauri, N.; Gupta, A.

    2014-09-14

    Nanoscale optical band gap variations in epitaxial thin films of two different spinel ferrites, i.e., NiFe₂O₄ (NFO) and CoFe₂O₄ (CFO), have been investigated by spatially resolved high resolution electron energy loss spectroscopy. Experimentally, both NFO and CFO show indirect/direct band gaps around 1.52 eV/2.74 and 2.3 eV, and 1.3 eV/2.31 eV, respectively, for the ideal inverse spinel configuration with considerable standard deviation in the band gap values for CFO due to various levels of deviation from the ideal inverse spinel structure. Direct probing of the regions in both the systems with tetrahedral A site cation vacancy, which is distinct from the ideal inverse spinel configuration, shows significantly smaller band gap values. The experimental results are supported by the density functional theory based modified Becke-Johnson exchange correlation potential calculated band gap values for the different cation configurations.

  17. Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb(001) surfaces grown by molecular-beam epitaxy

    SciTech Connect

    Raisin, C.; Da Silva, F.W.O.; Lassabatere, L. , Place Eugene Bataillon, 34095 Montpellier-Cedex 5, France )

    1990-01-01

    GaSb (001) surfaces were prepared by molecular-beam epitaxy. Auger electron spectroscopy (AES) and electron energy-loss spectroscopy (EELS) are reported for clean surfaces exposed to oxygen, and during the process the ionization gauge of the vacuum system is turned on. Successive stages of chemisorption can be distinguished. For oxygen coverage up to 0.5 monolayer, the surface states are saturated by bonding of the oxygen with Ga and Sb atoms. Sb atoms desorb causing significant Sb depletion in the first layer. Larger exposures further increase the coverage and induce, in the EELS spectra, losses related to O(2{ital p}) and O(2{ital s}) atomic states and new plasmon excitations. In the AES spectra the shift of Auger emission lines which are characteristic of Sb and Ga oxide forms appear; at coverages of about one monolayer back bonds break forming Sb{sub 2}O{sub 3} and Ga{sub 2}O{sub 3}. Further exposures to oxygen result in thicker oxide layers of Ga and Sb.

  18. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  19. Developing a framework for energy technology portfolio selection

    NASA Astrophysics Data System (ADS)

    Davoudpour, Hamid; Ashrafi, Maryam

    2012-11-01

    Today, the increased consumption of energy in world, in addition to the risk of quick exhaustion of fossil resources, has forced industrial firms and organizations to utilize energy technology portfolio management tools viewed both as a process of diversification of energy sources and optimal use of available energy sources. Furthermore, the rapid development of technologies, their increasing complexity and variety, and market dynamics have made the task of technology portfolio selection difficult. Considering high level of competitiveness, organizations need to strategically allocate their limited resources to the best subset of possible candidates. This paper presents the results of developing a mathematical model for energy technology portfolio selection at a R&D center maximizing support of the organization's strategy and values. The model balances the cost and benefit of the entire portfolio.

  20. Measure Guideline: Energy-Efficient Window Performance and Selection

    SciTech Connect

    Carmody, J.; Haglund, K.

    2012-11-01

    This document provides guidelines for the selection of energy-efficient windows in new and existing residential construction in all US climate zones. It includes information on window products, their attributes and performance. It provides cost/benefit information on window energy savings as well as information on non-energy benefits such as thermal comfort and reduced HVAC demands. The document also provides information on energy impacts of design decisions such as window orientation, total glazing area and shading devices and conditions. Information on resources for proper window installation is included as well. This document is for builders, homeowners, designers and anyone making decisions about selecting energy efficient window. It is intended to complement other Building America information and efforts.

  1. Development of anion-selective membranes. [for energy storage

    NASA Technical Reports Server (NTRS)

    Lacey, R. E.; Cowsar, D. R.

    1975-01-01

    Methods were studied of preparing anion-exchange membranes that would have low resistance, high selectivity, and physical and chemical stability when used in acidic media in a redox energy storage system. Of the twelve systems selected for study, only the system that was based on crosslinked poly-4-vinylpyridinium chloride produced physically strong membranes when equilibrated in l M HCl. The resistivity of the best membrane was 12 ohm-cm, and the transference number for chloride ions was 0.81.

  2. Measure Guideline. Energy-Efficient Window Performance and Selection

    SciTech Connect

    Carmody, John; Haglund, Kerry

    2012-11-01

    This document provides guidelines for the selection of energy-efficient windows in new and existing residential construction in all U.S. climate zones. It includes information on window products, their attributes and performance. It provides cost/benefit information on window energy savings as well as information on non-energy benefits such as thermal comfort and reduced HVAC demands. The report also provides information on energy impacts of design decisions such as window orientation, total glazing area and shading devices and conditions. Information on resources for proper window installation is included as well.

  3. Epitaxial stabilization and phase instability of VO2 polymorphs

    PubMed Central

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices. PMID:26787259

  4. Epitaxial stabilization and phase instability of VO2 polymorphs.

    PubMed

    Lee, Shinbuhm; Ivanov, Ilia N; Keum, Jong K; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices. PMID:26787259

  5. Epitaxial stabilization and phase instability of VO2 polymorphs

    NASA Astrophysics Data System (ADS)

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.

  6. Epitaxial stabilization and phase instability of VO2 polymorphs

    DOE PAGESBeta

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-20

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. Bymore » investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.« less

  7. Energy availability influences microclimate selection of hibernating bats.

    PubMed

    Boyles, Justin G; Dunbar, Miranda B; Storm, Jonathan J; Brack, Virgil

    2007-12-01

    Many species hibernate to conserve energy during periods of low food and water availability. It has long been assumed that the optimal hibernation strategy involves long, deep bouts of torpor that minimize energy expenditure. However, hibernation has ecological (e.g. decreased predator avoidance) and physiological (e.g. sleep deprivation) costs that must be balanced with energy savings; therefore, individuals possessing sufficient energy reserves may reduce their use of deep torpor. We tested the hypothesis that energy (fat) availability influences temperature selection of two fat-storing bat species during hibernation. We predicted that individuals with small energy reserves would select colder temperatures for hibernation in order to minimize energy expenditure, while individuals with larger energy reserves would choose warmer temperatures to minimize the costs of hibernation. Results from our field experiment indicate that little brown myotis (Myotis lucifugus) hibernating in warm microclimates were significantly heavier than individuals hibernating in cooler microclimates. To determine if energy availability was mediating this relationship, we limited fatty acid availability with mercaptoacetate (MA) and quantified its effect on torpid metabolic rate (TMR) and thermal preference of big brown bats (Eptesicus fuscus). Administration of MA caused a 43% drop in TMR at 10 degrees C and caused bats to choose significantly colder temperatures for hibernation. Our results suggest that fat-storing bats minimize torpor expression using both physiological and behavioral mechanisms. PMID:18055623

  8. Model selection as a science driver for dark energy surveys

    NASA Astrophysics Data System (ADS)

    Mukherjee, Pia; Parkinson, David; Corasaniti, Pier Stefano; Liddle, Andrew R.; Kunz, Martin

    2006-07-01

    A key science goal of upcoming dark energy surveys is to seek time-evolution of the dark energy. This problem is one of model selection, where the aim is to differentiate between cosmological models with different numbers of parameters. However, the power of these surveys is traditionally assessed by estimating their ability to constrain parameters, which is a different statistical problem. In this paper, we use Bayesian model selection techniques, specifically forecasting of the Bayes factors, to compare the abilities of different proposed surveys in discovering dark energy evolution. We consider six experiments - supernova luminosity measurements by the Supernova Legacy Survey, SNAP, JEDI and ALPACA, and baryon acoustic oscillation measurements by WFMOS and JEDI - and use Bayes factor plots to compare their statistical constraining power. The concept of Bayes factor forecasting has much broader applicability than dark energy surveys.

  9. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  10. Atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Goodman, Colin H. L.; Pessa, Markus V.

    1986-08-01

    Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.

  11. Supply of and demand for selected energy related mineral commodities

    USGS Publications Warehouse

    Sibley, Scott F.

    2010-01-01

    In this report, subjects discussed include components of mineral supply, production, and consumption data, and information on selected mineral commodities in which the Energy Critical Elements Study Group has an interest, and U.S. Geological Survey (USGS) recycling studies, with some results of these studies.

  12. Energy Cane Breeding and Selection in Louisiana - A Progress Report

    Technology Transfer Automated Retrieval System (TEKTRAN)

    In 2001, United States Department of Agriculture, Agricultural Research Service scientists at the Sugarcane Research Laboratory (SRL) in Houma, Louisiana, began assessing the energy potential of high-fiber sugarcanes (Saccharum spp.) in the Louisiana sugar belt. Test sites were selected geographica...

  13. Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Ksendzov, A.; Iannelli, J. M.; George, T.

    1991-01-01

    Epitaxial CoSi2 particles in a single-crystal silicon matrix are grown by molecular-beam epitaxy using a technique that allows nanometer control over particle size in three dimensions. These composite layers exhibit resonant absorption predicted by effective-medium theory. Selection of the height and diameter of disklike particles through a choice of growth conditions allows tailoring of the depolarization factor and hence of the surface-plasmon resonance energy. Resonant absorption from 0.49 to 1.04 eV (2.5 to 1.2 micron) is demonstrated and shown to agree well with values predicted by the Garnett (1904, 1906) theory using the bulk dielectric constants for CoSi2 and Si.

  14. Observation of selective plasmon-exciton coupling in nonradiative energy transfer: donor-selective versus acceptor-selective plexcitons.

    PubMed

    Ozel, Tuncay; Hernandez-Martinez, Pedro Ludwig; Mutlugun, Evren; Akin, Onur; Nizamoglu, Sedat; Ozel, Ilkem Ozge; Zhang, Qing; Xiong, Qihua; Demir, Hilmi Volkan

    2013-07-10

    We report selectively plasmon-mediated nonradiative energy transfer between quantum dot (QD) emitters interacting with each other via Förster-type resonance energy transfer (FRET) under controlled plasmon coupling either to only the donor QDs (i.e., donor-selective) or to only the acceptor QDs (i.e., acceptor-selective). Using layer-by-layer assembled colloidal QD nanocrystal solids with metal nanoparticles integrated at carefully designed spacing, we demonstrate the ability to enable/disable the coupled plasmon-exciton (plexciton) formation distinctly at the donor (exciton departing) site or at the acceptor (exciton feeding) site of our choice, while not hindering the donor exciton-acceptor exciton interaction but refraining from simultaneous coupling to both sites of the donor and the acceptor in the FRET process. In the case of donor-selective plexciton, we observed a substantial shortening in the donor QD lifetime from 1.33 to 0.29 ns as a result of plasmon-coupling to the donors and the FRET-assisted exciton transfer from the donors to the acceptors, both of which shorten the donor lifetime. This consequently enhanced the acceptor emission by a factor of 1.93. On the other hand, in the complementary case of acceptor-selective plexciton we observed a 2.70-fold emission enhancement in the acceptor QDs, larger than the acceptor emission enhancement of the donor-selective plexciton, as a result of the combined effects of the acceptor plasmon coupling and the FRET-assisted exciton feeding. Here we present the comparative results of theoretical modeling of the donor- and acceptor-selective plexcitons of nonradiative energy transfer developed here for the first time, which are in excellent agreement with the systematic experimental characterization. Such an ability to modify and control energy transfer through mastering plexcitons is of fundamental importance, opening up new applications for quantum dot embedded plexciton devices along with the development of new

  15. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  16. Energy-loss magnetic chiral dichroism study of epitaxial MnAs film on GaAs(001)

    SciTech Connect

    Fu, X.; Warot-Fonrose, B.; Arras, R.; Serin, V.; Demaille, D.; Eddrief, M.; Etgens, V.

    2015-08-10

    The room-temperature ferromagnetic behavior of MnAs/GaAs(001) thin film has been locally explored by Transmission Electron Microscope (TEM). We first differentiated hexagonal α-MnAs and quasi-hexagonal β-MnAs which are very similar in atomic structure by electron diffraction. Local magnetic moment information of the identified α-MnAs was extracted from manganese-L{sub 2,3} edges using Energy-loss Magnetic Circular Dichroism technique and the ratio of orbital to spin magnetic moment was measured. In this experiment, atomic structure identification, chemical analysis, and magnetic moment measurement were simultaneously achieved at high spatial resolution in TEM, thus providing a potential method for in-situ study of local properties of multiphase magnetic materials.

  17. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  18. Soft epitaxy of nanocrystal superlattices

    NASA Astrophysics Data System (ADS)

    Rupich, Sara M.; Castro, Fernando C.; Irvine, William T. M.; Talapin, Dmitri V.

    2014-12-01

    Epitaxial heterostructures with precise registry between crystal layers play a key role in electronics and optoelectronics. In a close analogy, performance of nanocrystal (NC) based devices depends on the perfection of interfaces formed between NC layers. Here we systematically study the epitaxial growth of NC layers for the first time to enable the fabrication of coherent NC layers. NC epitaxy reveals an exceptional strain tolerance. It follows a universal island size scaling behaviour and shows a strain-driven transition from layer-by-layer to Stranski-Krastanov growth with non-trivial island height statistics. Kinetic bottlenecks play an important role in NC epitaxy, especially in the transition from sub-monolayer to multilayer coverage and the epitaxy of NCs with anisotropic shape. These findings provide a foundation for the rational design of epitaxial structures in a fundamentally and practically important size regime between atomic and microscopic systems.

  19. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  20. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    SciTech Connect

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R.

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  1. Thermophotovoltaic energy conversion using photonic bandgap selective emitters

    DOEpatents

    Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

    2003-06-24

    A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.

  2. 7 CFR 4280.193 - Selecting energy audit and renewable energy development assistance grant applications for award.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 15 2012-01-01 2012-01-01 false Selecting energy audit and renewable energy..., DEPARTMENT OF AGRICULTURE LOANS AND GRANTS Rural Energy for America Program General Energy Audit and Renewable Energy Development Assistance Grants § 4280.193 Selecting energy audit and renewable...

  3. 7 CFR 4280.193 - Selecting energy audit and renewable energy development assistance grant applications for award.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 15 2014-01-01 2014-01-01 false Selecting energy audit and renewable energy..., DEPARTMENT OF AGRICULTURE LOANS AND GRANTS Rural Energy for America Program General Energy Audit and Renewable Energy Development Assistance Grants § 4280.193 Selecting energy audit and renewable...

  4. 7 CFR 4280.193 - Selecting energy audit and renewable energy development assistance grant applications for award.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 15 2013-01-01 2013-01-01 false Selecting energy audit and renewable energy..., DEPARTMENT OF AGRICULTURE LOANS AND GRANTS Rural Energy for America Program General Energy Audit and Renewable Energy Development Assistance Grants § 4280.193 Selecting energy audit and renewable...

  5. Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kuze, Kenta; Osumi, Noriyuki; Fujita, Yohei; Inoue, Yoku; Nakano, Takayuki

    2016-05-01

    The fabrication of quasi-phase-matching (QPM) crystals by selective-area growth on the two asymmetrically polar surfaces of GaN is examined. We attempted the fabrication of GaN-QPM crystals by one-time growth using a carbon mask. For GaN double-polarity selective-area growth (DP-SAG), we investigated the effect of varied nitriding times of the Al2O3 templates patterned with the carbon mask. We optimized the nitriding conditions for the DP-SAG process, and evaluated the substrate fabricated by the optimized DP-SAG process. In addition, we examined the interface formation mechanism of DP-GaN fabricated by GaN DP-SAG process. We determined that it is possible to fabricate DP-GaN with a sharp interface by optimizing the growth conditions.

  6. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

    SciTech Connect

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.

    1999-12-01

    We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

  7. Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers

    NASA Astrophysics Data System (ADS)

    Aubin, J.; Hartmann, J. M.; Veillerot, M.; Essa, Z.; Sermage, B.

    2015-11-01

    We have investigated the feasibility of selectively growing SiGe:B layers at 450 °C, 20 Torr in a 300 mm industrial reduced pressure chemical vapor deposition tool. A reduced H2 carrier gas mass-flow has been used in order to have acceptable growth rates at such a temperature, which is very low indeed. We have first of all studied on blanket Si wafers the in situ boron doping of SiGe with Si2H6, GeH4 and B2H6. A growth rate increase by a factor close to 7 together with a Ge concentration decrease from 53% down to 32% occurred as the diborane mass-flow increased. Very high B+ ion concentrations were obtained in layers that were single crystalline and smooth. Their concentration increased almost linearly with the B2H6 mass-flow, from 1.8 up to 8.3 × 1020 cm-3. The associated resistivity dropped from 0.43 down to 0.26 mΩ cm. We have then tested whether or not selectivity versus SiO2 could be achieved by adding various amounts of HCl to Si2H6 + GeH4 +B2H6. Single crystalline growth rates of intrinsic SiGe(:B) on Si were very similar to poly-crystalline growth rates on SiO2-covered substrates irrespective of the HCl flow. Straightforward selectivity was thus not feasible with a co-flow approach. As a consequence, a 450 °C deposition/etch (DE) process was evaluated. Growth occurred at 20 Torr with the above-mentioned chemistry, while the selective etch of poly-SiGe:B versus c-SiGe:B was conducted at 740 Torr with a medium HCl mass-flow (F(HCl)/F(H2) = 0.2) and a high H2 flow. A 2.2 etch selectivity was achieved while retaining single crystalline if slightly rough SiGe:B layers.

  8. EFFECT OF ENERGY DRINKS ON SELECTED FINE MOTOR TASKS.

    PubMed

    Jacobson, B H; Hughes, P P; Conchola, E C; Hester, G M; Woolsey, C L

    2015-08-01

    This study assessed the effect of energy shots on selected fine motor tasks. The participants were college-age male (n=19; M age=20.5 yr., SD=0.7) and female (n=21; M age=21.1 yr., SD=0.7) volunteers who were assessed on hand steadiness, choice reaction time, rotary pursuit, and simple reaction time. The energy shots group scored significantly poorer on the hand steadiness tests and significantly better on choice reaction time and simple reaction time tests. The enhanced reaction time and disruption in hand steadiness afforded by energy shots would not be apparent in many gross motor activities, but it is possible that reaction time improvement could be beneficial in sports that require quick, reflexive movements. However, the potential adverse psychological and physiological effects warrant discretionary use of such products. PMID:26302190

  9. Materials selection guidelines for geothermal energy utilization systems

    SciTech Connect

    Ellis, P.F. II; Conover, M.F.

    1981-01-01

    This manual includes geothermal fluid chemistry, corrosion test data, and materials operating experience. Systems using geothermal energy in El Salvador, Iceland, Italy, Japan, Mexico, New Zealand, and the United States are described. The manual provides materials selection guidelines for surface equipment of future geothermal energy systems. The key chemical species that are significant in determining corrosiveness of geothermal fluids are identified. The utilization modes of geothermal energy are defined as well as the various physical fluid parameters that affect corrosiveness. Both detailed and summarized results of materials performance tests and applicable operating experiences from forty sites throughout the world are presented. The application of various non-metal materials in geothermal environments are discussed. Included in appendices are: corrosion behavior of specific alloy classes in geothermal fluids, corrosion in seawater desalination plants, worldwide geothermal power production, DOE-sponsored utilization projects, plant availability, relative costs of alloys, and composition of alloys. (MHR)

  10. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lundin, W. V.; Zavarin, E. E.; Popov, M. G.; Troshkov, S. I.; Sakharov, A. V.; Smirnova, I. P.; Kulagina, M. M.; Davydov, V. Yu.; Smirnov, A. N.; Tsatsulnikov, A. F.

    2015-10-01

    Heavily Si-doped Al x Ga1- x N mesastrip structures were grown by selective MOVPE technology. Al x Ga1- x N:Si mesastructures with x ~ 0.01-0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with x ~ 0.03-0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content.

  11. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect

    Hudait, Mantu K.; Zhu Yan

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  12. Greater sage-grouse winter habitat selection and energy development

    SciTech Connect

    Doherty, K.E.; Naugle, D.E.; Walker, B.L.; Graham, J.M.

    2008-01-15

    Recent energy development has resulted in rapid and large-scale changes to western shrub-steppe ecosystems without a complete understanding of its potential impacts on wildlife populations. We modeled winter habitat use by female greater sage-grouse (Centrocercus urophasianus) in the Powder River Basin (PRB) of Wyoming and Montana, USA, to 1) identify landscape features that influenced sage-grouse habitat selection, 2) assess the scale at which selection occurred, 3) spatially depict winter habitat quality in a Geographic Information System, and 4) assess the effect of coal-bed natural gas (CBNG) development on winter habitat selection. We developed a model of winter habitat selection based on 435 aerial relocations of 200 radiomarked female sage-grouse obtained during the winters of 2005 and 2006. Percent sagebrush (Artemisia spp.) cover on the landscape was an important predictor of use by sage-grouse in winter. Sage-grouse were 1.3 times more likely to occupy sagebrush habitats that lacked CBNG wells within a 4-km{sup 2} area, compared to those that had the maximum density of 12.3 wells per 4 km{sup 2} allowed on federal lands. We validated the model with 74 locations from 74 radiomarked individuals obtained during the winters of 2004 and 2007. This winter habitat model based on vegetation, topography, and CBNG avoidance was highly predictive (validation R{sup 2} = 0.984). Our spatially explicit model can be used to identify areas that provide the best remaining habitat for wintering sage-grouse in the PRB to mitigate impacts of energy development.

  13. Epitaxial Growth of Pure 28Si Thin Films Using Isotopically Purified Ion Beams

    NASA Astrophysics Data System (ADS)

    Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Mokuno, Yoshiaki; Kinomura, Atsushi; Horino, Yuji

    2001-12-01

    Isotopically purified 28Si homoepitaxial films were grown by means of an ion-beam deposition (IBD) method with isotopically mass-selected negative 28Si- ion beams. The surface structural evolution during the film growth and the film structure after the growth were investigated using reflection high-energy electron diffraction (RHEED), cross-sectional transmission electron microscopy (TEM) and transmission electron diffraction (TED). The Si isotopic composition (28Si : 29Si : 30Si = 99.9982 : 0.0016 : 0.0002 at.%) of the resulting Si epitaxial film was determined by secondary-ion-mass spectrometry (SIMS).

  14. Epitaxial europium oxide on Ni(100) with single-crystal quality

    NASA Astrophysics Data System (ADS)

    Förster, Daniel F.; Klinkhammer, Jürgen; Busse, Carsten; Altendorf, Simone G.; Michely, Thomas; Hu, Zhiwei; Chin, Yi-Ying; Tjeng, L. H.; Coraux, Johann; Bourgault, Daniel

    2011-01-01

    High quality epitaxy of EuO on Ni(100) is developed in an in situ scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) study. A careful selection of the initial growth parameters is decisive to obtain a surface oxide suitable for the subsequent epitaxy of single phase EuO(100). After the creation of a three layer thick coalesced oxide film for the subsequent growth a distillation technique is applied. Appropriate annealing of films with up to 100 nm thickness generates sufficient conductivity for STM and electron spectroscopies. Oxygen vacancies are directly imaged by STM. They are of decisive importance for the metal-to-insulator transition around the temperature of the ferromagnetic-to-paramagnetic transition. A fast relaxation of the initial biaxial strain observed by LEED leaves little hope for an increase of the Curie temperature through epitaxial compression. Ex situ x-ray adsorption spectroscopy and magneto-optical Kerr effect microscopy measurements of thicker films are consistent with the stoichiometric single phase EuO with bulk properties.

  15. Dimensionality and noise in energy selective x-ray imaging

    SciTech Connect

    Alvarez, Robert E.

    2013-11-15

    Purpose: To develop and test a method to quantify the effect of dimensionality on the noise in energy selective x-ray imaging.Methods: The Cramèr-Rao lower bound (CRLB), a universal lower limit of the covariance of any unbiased estimator, is used to quantify the noise. It is shown that increasing dimensionality always increases, or at best leaves the same, the variance. An analytic formula for the increase in variance in an energy selective x-ray system is derived. The formula is used to gain insight into the dependence of the increase in variance on the properties of the additional basis functions, the measurement noise covariance, and the source spectrum. The formula is also used with computer simulations to quantify the dependence of the additional variance on these factors. Simulated images of an object with three materials are used to demonstrate the trade-off of increased information with dimensionality and noise. The images are computed from energy selective data with a maximum likelihood estimator.Results: The increase in variance depends most importantly on the dimension and on the properties of the additional basis functions. With the attenuation coefficients of cortical bone, soft tissue, and adipose tissue as the basis functions, the increase in variance of the bone component from two to three dimensions is 1.4 × 10{sup 3}. With the soft tissue component, it is 2.7 × 10{sup 4}. If the attenuation coefficient of a high atomic number contrast agent is used as the third basis function, there is only a slight increase in the variance from two to three basis functions, 1.03 and 7.4 for the bone and soft tissue components, respectively. The changes in spectrum shape with beam hardening also have a substantial effect. They increase the variance by a factor of approximately 200 for the bone component and 220 for the soft tissue component as the soft tissue object thickness increases from 1 to 30 cm. Decreasing the energy resolution of the detectors increases

  16. Epitaxial piezoelectric thick film heterostructures on silicon

    NASA Astrophysics Data System (ADS)

    Kim, Dong Min

    The significantly higher dielectric permittivity, piezoelectric coefficients and electromechanical coupling coefficients of single crystal relaxor ferroelectrics make them very attractive for medical ultrasound transducers and microelectromechanical systems (MEMS) applications. The potential impact of thin-film relaxor ferroelectrics in integrated actuators and sensor on silicon has stimulated research on the growth and characterization of epitaxial piezoelectric thin films. We have fabricated heterostructures by (1) synthesizing optimally-oriented, epitaxial thin films of Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) on miscut (001) Si wafers with epitaxial (001) SrTiO 3 template layers, where the single crystal form is known to have the giant piezoelectric response, and (2) nano-structuring to reduce the constraint imposed by the underlying silicon substrate. Up to now, the longitudinal piezoelectric coefficient (d33) values of PMN and PMN-PT thin films range from 50 to 200 pC/N have been reported, which are far inferior to the properties of bulk single crystals value (d33 ˜ 2000 pC/N). These might be attributed to substrate constraints, pyrochlore phases and other effects. Here, we have realized the giant d33 values by fabricating epitaxial PMN-PT thick films on silicon. When the PMN-PT film was subdivided into ˜1 mum2 capacitors by focused ion beam processing, a 4 mum thick film shows a low-field d33 of 800 pm/V that increases to over 1200 pm/V under bias, which is the highest d33 value ever realized on silicon substrates. These high piezo-reponse PMN-PT epitaxial heterostructures can be used for multilayered MEMS devices which function with low driving voltage, high frequency ultrasound transducer arrays for medical imaging, and capacitors for charge and energy storage. Since these PMN-PT films are epitaxially integrated with the silicon, they can make use of the well-developed fabrication process for patterning and micromachining of this large-area, cost

  17. Pulsed Laser Deposition and Reflection High-Energy Electron Diffraction studies of epitaxial long range order, nano- and microstructured Ag thin films grown on MgO, Al2 O3 , STO and Si

    NASA Astrophysics Data System (ADS)

    Velazquez, Daniel; Seibert, Rachel; Man, Hamdi; Spentzouris, Linda; Terry, Jeff

    2015-03-01

    Pulsed Laser Deposition is a state-of-the-art technique that allows for the fine tunability of the deposition rate, highly uniform and epitaxial sample growth, the ability to introduce partial pressures of gases into the experimental chamber for growth of complex materials without interfering with the energy source (laser). An auxiliary in situ technique for growth monitoring, Reflection High-Energy Electron Diffraction, is a powerful characterization tool for predictability of the surface physical structure both, qualitatively and quantitatively. RHEED patterns during and post deposition of Ag thin films on MgO, Al2O3, Si and STO substrtates are presented and their interpretations are compared with surface imaging techniques (SEM, STM) to evidence the usefulness of the technique.

  18. Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 1 1)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoshida, Hiroatsu; Ikejiri, Keitaro; Sato, Takuya; Hara, Shinjiroh; Hiruma, Kenji; Motohisa, Junichi; Fukui, Takashi

    2009-12-01

    We analyzed twin defects in GaAs nanowires as thin as 100-400 nm and tetrahedral structures as small as 1.0 μm, which were selectively grown by metal organic vapour-phase epitaxy (MOVPE) within a SiO 2 mask window fabricated on GaAs(1 1 1)B substrates. In particular, we focused on the correlation between the twins and GaAs(1 1 1)B surface reconstructions. We confirmed that the shape of GaAs crystals selectively grown on GaAs(1 1 1)B substrates changed from hexagonal nanowires to truncated tetrahedra when the size of the mask opening was increased from 100 to 1000 nm under the same growth conditions. The shape also changed from tetrahedral to hexagonal with decreasing growth temperature ( Tg: 600-800 °C) and with increasing arsine (AsH 3) partial pressure (1.0×10 -4 to 5.0×10 -4 atm). Rotational twins around the <1 1 1> axis were found in the tetrahedra by transmission electron microscopy (TEM) and scanning electron microscopy observations. In addition, the probability of twins developing in the tetrahedra increased with decreasing mask opening size, with decreasing Tg, and with increasing AsH 3 partial pressure. The TEM study also revealed the existence of a high density of rotational twins in the nanowires, and their density increased with decreasing nanowire diameter, suggesting a correlation between the twins and the shape/size of GaAs crystals. These findings were semi-quantitatively compared with a reported phase diagram for GaAs(1 1 1)B surface reconstruction. By analyzing the relationship between twin development and MOVPE conditions, we found that the shape change of GaAs crystals on GaAs(1 1 1)B and the formation of twins coincided well with the transition of GaAs surface reconstruction between the (2×2) and (√19×√19) structures.

  19. Atomic Scale Study of Interfaces Involved in Epitaxial Fe/MgO/Fe Magnetic Tunnel Junctions

    SciTech Connect

    Andrieu, S.; Serra, R.; Bonell, F.; Tiusan, C.; Calmels, L.; Snoeck, E.; Varela del Arco, Maria; Pennycook, Stephen J; Walls, M.; Colliex, C.

    2009-01-01

    Epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions grown by Molecular Beam Epitaxy have been studied by using spatially resolved Electron Energy Loss Spectroscopy (EELS). The structure, the chemical composition as well as the bonding variations across the interfaces were investigated up to the atomic scale.

  20. Implications of light energy on food quality and packaging selection.

    PubMed

    Duncan, Susan E; Chang, Hao-Hsun

    2012-01-01

    Light energy in the ultraviolet and visible light regions plays a critical role in overall food quality, leading to various degradation and oxidation reactions. Food degradation and oxidation result in the destruction of nutrients and bioactive compounds, the formation of off odors and flavors, the loss of food color, and the formation of toxic substances. Food compounds are sensitive to various light wavelengths. Understanding the effect that specific light wavelengths have on food compounds will allow the development of novel food packaging materials that block the most damaging light wavelengths to photostability of specific food compounds. Future research should focus more specifically on the effect of specific light wavelengths on the quality of specific food products, as there is limited published information on this particular topic. This information also can be directly related to the selection of food packaging materials to retain both high quality and visual clarity of food products exposed to light. PMID:23034114

  1. A review of selected energy-related data sets

    SciTech Connect

    Nicholls, A.K.; Elliott, D.B.; Jones, M.L.; Hannifan, J.M.; Degroat, K.J.; Eichner, M.J.; King, J.E.

    1992-09-01

    DOE`s Office of Planning and Assessment (OPA) performs crosscutting technical, policy, and environmental assessments of energy technologies and markets. To support these efforts, OPA is in the process of creating a data base management system (DBMS) that will include relevant data compiled from other sources. One of the first steps is a review of selected data sets that may be considered for inclusion in the DBMS. The review covered data sets in five categories: buildings-specific data, industry-specific data, transportation-specific data, utilities-specific data, and crosscutting/general data. Reviewed data sets covered a broad array of energy efficiency, renewable, and/or benchmark technologies. Most data sets reviewed in this report are sponsored by Federal government entities and major industry organizations. Additional data sets reviewed are sponsored by the states of California and New York and regional entities in the Pacific Northwest. Prior to full review, candidate data sets were screened for their utility to OPA. Screening criteria included requirements that a data set be particularly applicable to OPA`s data needs, documented, current, and obtainable. To fully implement its DBMS, OPA will need to expand the review to other data sources, and must carefully consider the implications of differing assumptions and methodologies when comparing data.

  2. A review of selected energy-related data sets

    SciTech Connect

    Nicholls, A.K.; Elliott, D.B.; Jones, M.L. ); Hannifan, J.M.; Degroat, K.J.; Eichner, M.J.; King, J.E. )

    1992-09-01

    DOE's Office of Planning and Assessment (OPA) performs crosscutting technical, policy, and environmental assessments of energy technologies and markets. To support these efforts, OPA is in the process of creating a data base management system (DBMS) that will include relevant data compiled from other sources. One of the first steps is a review of selected data sets that may be considered for inclusion in the DBMS. The review covered data sets in five categories: buildings-specific data, industry-specific data, transportation-specific data, utilities-specific data, and crosscutting/general data. Reviewed data sets covered a broad array of energy efficiency, renewable, and/or benchmark technologies. Most data sets reviewed in this report are sponsored by Federal government entities and major industry organizations. Additional data sets reviewed are sponsored by the states of California and New York and regional entities in the Pacific Northwest. Prior to full review, candidate data sets were screened for their utility to OPA. Screening criteria included requirements that a data set be particularly applicable to OPA's data needs, documented, current, and obtainable. To fully implement its DBMS, OPA will need to expand the review to other data sources, and must carefully consider the implications of differing assumptions and methodologies when comparing data.

  3. Applications of Optimal Building Energy System Selection and Operation

    SciTech Connect

    Marnay, Chris; Stadler, Michael; Siddiqui, Afzal; DeForest, Nicholas; Donadee, Jon; Bhattacharya, Prajesh; Lai, Judy

    2011-04-01

    Berkeley Lab has been developing the Distributed Energy Resources Customer Adoption Model (DER-CAM) for several years. Given load curves for energy services requirements in a building microgrid (u grid), fuel costs and other economic inputs, and a menu of available technologies, DER-CAM finds the optimum equipment fleet and its optimum operating schedule using a mixed integer linear programming approach. This capability is being applied using a software as a service (SaaS) model. Optimisation problems are set up on a Berkeley Lab server and clients can execute their jobs as needed, typically daily. The evolution of this approach is demonstrated by description of three ongoing projects. The first is a public access web site focused on solar photovoltaic generation and battery viability at large commercial and industrial customer sites. The second is a building CO2 emissions reduction operations problem for a University of California, Davis student dining hall for which potential investments are also considered. And the third, is both a battery selection problem and a rolling operating schedule problem for a large County Jail. Together these examples show that optimization of building u grid design and operation can be effectively achieved using SaaS.

  4. Molecular beam epitaxy fabrication of SrTiO3 and Bi2Sr2CaCu2O8 heterostructures using a novel reflection high-energy electron diffraction monitoring technique

    NASA Astrophysics Data System (ADS)

    Bodin, Peter; Sakai, Shigeki; Kasai, Yuji

    1992-07-01

    SrTiO3 and Bi2Sr2CaCu2O8 layered structures were continuously grown by the molecular beam epitaxy technique with in situ reflection high-energy electron diffraction (RHEED). By using a new RHEED picture subtraction technique, intensity changes due to only the topmost layer could be displayed. This method allows us to sensitively detect roughness on the atomic scale and excess phase formation. The SrTiO3 layer could be grown by sequential shuttering as well as coevaporation. A heterostructure with a 60 a Bi2Sr2CaCu2O8 film had a superconducting transition temperature of 53 K.

  5. Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

    SciTech Connect

    Izhnin, I. I. Izhnin, A. I.; Fitsych, E. I.; Smirnova, N. A.; Denisov, I. A.; Pociask, M.; Mynbaev, K. D.

    2011-09-15

    Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ({approx}10{sup 17} cm{sup -3}) created in the films. These defects decompose in {approx}10{sup 3} min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to {approx}10{sup 14} cm{sup -3}) for the films under study.

  6. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  7. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  8. Population dynamics in epitaxial Er{sub 2}O{sub 3} thin films grown on Si(111)

    SciTech Connect

    Tawara, T.; Omi, H.; Hozumi, T.; Kaji, R.; Adachi, S.; Gotoh, H.; Sogawa, T.

    2013-06-17

    We grow single crystal erbium-oxide (Er{sub 2}O{sub 3}) epitaxially on a Si (111) substrate by using molecular beam epitaxy and investigate the population dynamics in Er{sup 3+} ions for the coherent manipulation of the population in Er{sub 2}O{sub 3}. Sharp and discrete Stark energy levels of the {sup 4}I{sub 13/2} manifold as small as 200 {mu}eV are observed with inhomogeneous broadening caused by the uniform crystal field of the epitaxial Er{sub 2}O{sub 3}. We also experimentally determine the time constant of the resonant population transfer between spatially distant Er{sup 3+}-ion sites, which is limited to the manipulation time of the population in the Er{sub 2}O{sub 3} crystals. Using selective excitation of the Stark level in the {sup 4}I{sub 13/2} manifold, we obtain the energy transfer times between spatially distant Er{sup 3+} ions, and they are about 2 {mu}s between sites whose crystallographic symmetry is different and 10 {mu}s between sites whose symmetry is the same.

  9. Energy efficiency of substance and energy recovery of selected waste fractions.

    PubMed

    Fricke, Klaus; Bahr, Tobias; Bidlingmaier, Werner; Springer, Christian

    2011-04-01

    In order to reduce the ecological impact of resource exploitation, the EU calls for sustainable options to increase the efficiency and productivity of the utilization of natural resources. This target can only be achieved by considering resource recovery from waste comprehensively. However, waste management measures have to be investigated critically and all aspects of substance-related recycling and energy recovery have to be carefully balanced. This article compares recovery methods for selected waste fractions with regard to their energy efficiency. Whether material recycling or energy recovery is the most energy efficient solution, is a question of particular relevance with regard to the following waste fractions: paper and cardboard, plastics and biowaste and also indirectly metals. For the described material categories material recycling has advantages compared to energy recovery. In accordance with the improved energy efficiency of substance opposed to energy recovery, substance-related recycling causes lower emissions of green house gases. For the fractions paper and cardboard, plastics, biowaste and metals it becomes apparent, that intensification of the separate collection systems in combination with a more intensive use of sorting technologies can increase the extent of material recycling. Collection and sorting systems must be coordinated. The objective of the overall system must be to achieve an optimum of the highest possible recovery rates in combination with a high quality of recyclables. The energy efficiency of substance related recycling of biowaste can be increased by intensifying the use of anaerobic technologies. In order to increase the energy efficiency of the overall system, the energy efficiencies of energy recovery plants must be increased so that the waste unsuitable for substance recycling is recycled or treated with the highest possible energy yield. PMID:21145722

  10. Energy efficiency of substance and energy recovery of selected waste fractions

    SciTech Connect

    Fricke, Klaus; Bahr, Tobias; Bidlingmaier, Werner; Springer, Christian

    2011-04-15

    In order to reduce the ecological impact of resource exploitation, the EU calls for sustainable options to increase the efficiency and productivity of the utilization of natural resources. This target can only be achieved by considering resource recovery from waste comprehensively. However, waste management measures have to be investigated critically and all aspects of substance-related recycling and energy recovery have to be carefully balanced. This article compares recovery methods for selected waste fractions with regard to their energy efficiency. Whether material recycling or energy recovery is the most energy efficient solution, is a question of particular relevance with regard to the following waste fractions: paper and cardboard, plastics and biowaste and also indirectly metals. For the described material categories material recycling has advantages compared to energy recovery. In accordance with the improved energy efficiency of substance opposed to energy recovery, substance-related recycling causes lower emissions of green house gases. For the fractions paper and cardboard, plastics, biowaste and metals it becomes apparent, that intensification of the separate collection systems in combination with a more intensive use of sorting technologies can increase the extent of material recycling. Collection and sorting systems must be coordinated. The objective of the overall system must be to achieve an optimum of the highest possible recovery rates in combination with a high quality of recyclables. The energy efficiency of substance related recycling of biowaste can be increased by intensifying the use of anaerobic technologies. In order to increase the energy efficiency of the overall system, the energy efficiencies of energy recovery plants must be increased so that the waste unsuitable for substance recycling is recycled or treated with the highest possible energy yield.

  11. Large area epitaxial germanane for electronic devices

    NASA Astrophysics Data System (ADS)

    Amamou, Walid; Odenthal, Patrick M.; Bushong, Elizabeth J.; O'Hara, Dante J.; Luo, Yunqiu Kelly; van Baren, Jeremiah; Pinchuk, Igor; Wu, Yi; Ahmed, Adam S.; Katoch, Jyoti; Bockrath, Marc W.; Tom, Harry W. K.; Goldberger, Joshua E.; Kawakami, Roland K.

    2015-09-01

    We report the synthesis and transfer of epitaxial germanane (GeH) onto arbitrary substrates by electrochemical delamination and investigate its optoelectronic properties. GeH films with thickness ranging from 1 to 600 nm (2-1000 layers) and areas up to ˜1 cm2 have been reliably transferred and characterized by photoluminescence, x-ray diffraction, and energy-dispersive x-ray spectroscopy. Wavelength dependent photoconductivity measurements on few-layer GeH exhibit an absorption edge and provide a sensitive characterization tool for ultrathin germanane materials. The transfer process also enables the possibility of integrating germanane into vertically stacked heterostructures.

  12. Selection of herbaceous energy crops for the western corn belt

    SciTech Connect

    Anderson, I.C.; Buxton, D.R.; Hallam, J.A.

    1994-05-01

    The ultimate economic feasibility of biomass depends on its cost of production and on the cost of competing fuels. The purpose of this research project is to evaluate the production costs of several combinations of species and management systems for producing herbaceous biomass for energy use in Iowa. Herbaceous biomass production systems have costs similar to other crop production systems, such as corn, soybean, and forages. Thus, the factors influencing the costs of producing dedicated biomass energy crops include technological factors such as the cultivation system, species, treatments, soil type, and site and economic factors such as input prices and use of fixed resources. In order to investigate how these production alternatives are influenced by soil resources, and climate conditions, two locations in Iowa, Ames and Chariton, with different soil types and slightly different weather patterns were selected for both the agronomic and economic analyses. Nine crops in thirteen cropping systems were grown at the two sites for five years, from 1988 to 1992. Some of the systems had multiple cropping or interplanting, using combinations of cool-season species and warm-season species, in order to meet multiple objectives of maximum biomass, minimal soil loss, reduced nitrogen fertilization or diminished pesticide inputs. Six of the systems use continuous monocropping of herbaceous crops with an emphasis on production. The seven other systems consist of similar crops, but with crop rotation and soil conservation considerations. While the erosion and other off-site effects of these systems is an important consideration in their overall evaluation, this report will concentrate on direct production costs only.

  13. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  14. Epitaxy: the motion picture

    NASA Astrophysics Data System (ADS)

    Finnie, Paul; Homma, Yoshikazu

    2002-03-01

    The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms-and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow-while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies. It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both.

  15. Epitaxial Pb(Zrx,Ti1-x)O3 (0.30 ≤ x ≤ 0.63) films on (100)MgO substrates for energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Yeager, Charles B.; Trolier-McKinstry, Susan

    2012-10-01

    Piezoelectric energy harvesting systems are of interest as a long-term power source for low-power wireless sensors. Transduction from elastic to electrical energy depends on the product of the piezoelectric charge and voltage coefficients; optimization of this figure of merit is an essential step towards improved microelectromechanical energy harvesting devices. This work reports on the composition dependence on the dielectric and piezoelectric properties of epitaxial {001}Pb(Zrx, Ti1-x)O3 films grown by chemical solution deposition and crystallized at 650 °C on (100)Pt//(100)MgO substrates for 0.63 ≤ x ≤ 0.30. The power generation figure of merit shows the greatest magnitude at compositions near x = 0.52, for which e31,f = -12 C/m2 and ɛr = 420. Lattice parameters were determined as a function of [Zr] to assess when comparisons to single domain properties calculated from Landau-Devonshire theory were appropriate. Furthermore, films doped with 1 at. % Mn had the highest observed figure of merit, four times greater than of AlN.

  16. Phase-field simulation of domain structures in epitaxial BiFeO3 films on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Winchester, B.; Wu, P.; Chen, L. Q.

    2011-08-01

    The ferroelectric domain structures of epitaxial BiFeO3 thin films on miscut substrates were studied using a phase-field model. The effects of substrate vicinality towards (100) are considered by assuming charge-compensated surface and film/substrate interface. The predicted domain structures show remarkable agreement with existing experimental observations, including domain wall orientations and local topological domain configurations. The roles of elastic, electric, and gradient energies on the domain structures were analyzed. It is shown that the substrate strain anisotropy due to the miscut largely determines the domain variant selection and domain configurations.

  17. Fluorination of epitaxial oxides: Creating ferrite and nickelate oxyfluoride films

    NASA Astrophysics Data System (ADS)

    May, Steven; Moon, Eun; Xie, Yujun; Keavney, David; Goebel, Justin; Laird, Eric; Li, Christopher

    2013-03-01

    In ABO3 perovskites, the physical properties are directly coupled to the nominal valence state of the B-site cation. In epitaxial thin films, the dominant strategy to control B-site valence is through the selection of a di- or trivalent cation on the A-site. However, this approach is limited, particularly when electron doping on the B-site is desired. Here we report a simple method for realizing oxyfluoride films, where the substitution of F for O is expected to reduce the B-site valence, providing a new means to tune electronic, optical and magnetic properties in thin films. Fluorination is achieved by spin coating an oxygen deficient film with poly(vinylidene fluoride). The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO3-δFδ and LaNiO3-δFδ (δ ? 0.5) films, as confirmed by x-ray photoemission spectroscopy and x-ray absorption spectroscopy. This work is supported by the U. S. Army Research Office under grant number W911NF-12-1-0132. Work at the Advanced Photon Source is supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences under contract DE-AC02-06CH11357.

  18. Unusual role of epilayer–substrate interactions in determining orientational relations in van der Waals epitaxy

    PubMed Central

    Liu, Lei; Siegel, David A.; Chen, Wei; Liu, Peizhi; Guo, Junjie; Duscher, Gerd; Zhao, Chong; Wang, Hao; Wang, Wenlong; Bai, Xuedong; McCarty, Kevin F.; Zhang, Zhenyu; Gu, Gong

    2014-01-01

    Using selected-area low-energy electron diffraction analysis, we showed strict orientational alignment of monolayer hexagonal boron nitride (h-BN) crystallites with Cu(100) surface lattices of Cu foil substrates during atmospheric pressure chemical vapor deposition. In sharp contrast, the graphene–Cu(100) system is well-known to assume a wide range of rotations despite graphene’s crystallographic similarity to h-BN. Our density functional theory calculations uncovered the origin of this surprising difference: The crystallite orientation is determined during nucleation by interactions between the cluster’s edges and the substrate. Unlike the weaker B– and N–Cu interactions, strong C–Cu interactions rearrange surface Cu atoms, resulting in the aligned geometry not being a distinct minimum in total energy. The discovery made in this specific case runs counter to the conventional wisdom that strong epilayer–substrate interactions enhance orientational alignment in epitaxy and sheds light on the factors that determine orientational relation in van der Waals epitaxy of 2D materials. PMID:25385622

  19. Net energy analysis - powerful tool for selecting elective power options

    SciTech Connect

    Baron, S.

    1995-12-01

    A number of net energy analysis studies have been conducted in recent years for electric power production from coal, oil and uranium fuels; synthetic fuels from coal and oil shale; and heat and electric power from solar energy. This technique is an excellent indicator of investment costs, environmental impact and potential economic competitiveness of alternative electric power systems for energy planners from the Eastern European countries considering future options. Energy conservation is also important to energy planners and the net energy analysis technique is an excellent accounting system on the extent of energy resource conservation. The author proposes to discuss the technique and to present the results of his studies and others in the field. The information supplied to the attendees will serve as a powerful tool to the energy planners considering their electric power options in the future.

  20. Low-temperature epitaxy of Si and Ge by direct ion beam deposition

    SciTech Connect

    Zuhr, R.A.; Appleton, B.R.; Herbots, N.; Larson, B.C.; Noggle, T.S.; Pennycook, S.J.

    1987-07-01

    Amorphous, polycrystalline, and epitaxial thin films of Si and Ge have been grown by ion beam deposition (IBD) under ultrahigh-vacuum conditions. IBD involves the direct deposition of ions onto single-crystal substrates from mass- and energy-analyzed beams with energies of 10 to 200 eV. The IBD films were characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning were studied. Differences in the formation of epitaxial thin films on p- and n-type Si substrates were observed with n/sup -/ Si showing better epitaxy at low temperatures. Epitaxial overlayers which showed good minimum yields by ion channeling (3%--4%) have been produced at temperatures as low as 375/sup 0/C for Ge on Ge(100) and Si on Si(100).

  1. Calorimetry of epitaxial thin films.

    PubMed

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  2. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

    SciTech Connect

    Teterin, P. E. Averyanov, D. V.; Sadofyev, Yu. G. Parfenov, O. E.; Likhachev, I. A.; Storchak, V. G.

    2015-01-15

    Epitaxial EuO thin films with thickness up to 60 nm have been grown by molecular beam epitaxy both on SrO sublayers and directly on Si (001) substrates. Crystal structure has been controlled in situ by reflection high energy electron diffraction. Ex situ studies by X-ray diffraction and Rutherford backscattering have confirmed high crystalline quality of the films.

  3. Theoretical Minimum Energies to Produce Steel for Selected Conditions

    SciTech Connect

    Fruehan, R.J.; Fortini, O.; Paxton, H.W.; Brindle, R.

    2000-05-01

    The energy used to produce liquid steel in today's integrated and electric arc furnace (EAF) facilities is significantly higher than the theoretical minimum energy requirements. This study presents the absolute minimum energy required to produce steel from ore and mixtures of scrap and scrap alternatives. Additional cases in which the assumptions are changed to more closely approximate actual operating conditions are also analyzed. The results, summarized in Table E-1, should give insight into the theoretical and practical potentials for reducing steelmaking energy requirements. The energy values have also been converted to carbon dioxide (CO{sub 2}) emissions in order to indicate the potential for reduction in emissions of this greenhouse gas (Table E-2). The study showed that increasing scrap melting has the largest impact on energy consumption. However, scrap should be viewed as having ''invested'' energy since at one time it was produced by reducing ore. Increasing scrap melting in the BOF mayor may not decrease energy if the ''invested'' energy in scrap is considered.

  4. Line-on-Line Coincidence: A New Type of Epitaxy Found in Organic-Organic Heterolayers

    NASA Astrophysics Data System (ADS)

    Mannsfeld, Stefan C.; Leo, Karl; Fritz, Torsten

    2005-02-01

    We propose a new type of epitaxy, line-on-line coincidence (LOL), which explains the ordering in the organic-organic heterolayer system PTCDA on HBC on graphite. LOL epitaxy is similar to point-on-line coincidence (POL) in the sense that all overlayer molecules lie on parallel, equally spaced lines. The key difference to POL is that these lines are not restricted to primitive lattice lines of the substrate lattice. Potential energy calculations demonstrate that this new type of epitaxy is indeed characterized by a minimum in the overlayer-substrate interaction potential.

  5. Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lettieri, James

    Molecular beam epitaxy was used to grow epitaxial oxides on silicon substrates. The growth of BaO, SrO, EuO, and SrTiO3 are discussed with a focus on the general theme of integration of functional, epitaxial oxides into a silicon environment. Oxidation studies of various metal systems relevant for oxide on silicon epitaxy and integration are reported. Results demonstrate the catalytic nature of an alkaline earth metal at small concentrations to enable the oxidation of the poorly oxidizing metals at pressures lower than during deposition of the pure metal alone. Results from the deposition of various elements are presented. The aspects of the growth of alkaline earth oxides on silicon are explained. The transition from the silicon to the alkaline earth oxide as described through reflection high energy electron diffraction (RHEED) is presented and used to understand issues related to each stage of the growth. High quality, commensurate alkaline earth oxides are grown on silicon at room temperature and P O2 background ˜ 3 x 10-8 Torr. The growth of alkaline earth and rare earth oxide solid solutions and rare earth oxides (EuO) are described. The first reported epitaxial EuO on silicon is reported, enabled by the use of a thin buffer layer (13 A) of SrO. Using a strategy of transition from simple structures to the more complex, the growth of a perovskite (SrTiO3) on silicon is demonstrated. Growth of a structurally optimized perovskite structure entails the transformation of a thin interfacial alkaline earth oxide layer into the initial perovskite cells. SrTiO3 and La-doped SrTiO3 on silicon are used to integrate a piezoelectric relevant for microelectromechanical systems (MEMS) applications and a ferroelectric relevant for a ferroelectric random access memory (FRAM) architecture. A d33 value of over 400 pm/V under bias is measured for the piezoelectric (Pb(Mn1/3Nb 2/3)O3 -PbTiO3) and a remanent polarization of 25 muC/cm2 and fatigue free behavior (>1012 cycles) for a

  6. A Data Envelopment Analysis Model for Renewable Energy Technology Selection

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Public and media interest in alternative energy sources, such as renewable fuels, has rapidly increased in recent years due to higher prices for oil and natural gas. However, the current body of research providing comparative decision making models that either rank these alternative energy sources a...

  7. Selected Energy Education Activities for Pennsylvania Middle School Grades. Draft.

    ERIC Educational Resources Information Center

    Hack, Nancy; And Others

    These activities are intended to help increase awareness and understanding of the energy situation and to encourage students to become energy conservationists. The document is divided into sections according to discipline area. A final section is devoted to interdisciplinary activities involving several discipline areas integrated with the energy…

  8. Selected Energy Conservation Options for Homeowners: Options, Expenses and Payoffs.

    ERIC Educational Resources Information Center

    Lengyel, Dorothy L.; And Others

    This publication is a check list for homeowners and renters to help them reduce energy costs. The list consists of 126 energy conservation options. These options range from "change clothes instead of adjusting thermostat" and "air conditioners turned off when not home" to "use sink stopper" and "weatherstripping and caulking applied." For each…

  9. Summary of selected compressed air energy storage studies

    SciTech Connect

    Allen, R.D.; Doherty, T.J.; Kannberg, L.D.

    1985-01-01

    A descriptive summarily of research and development in compressed air energy storage technology is presented. Research funded primarily by the Department of Energy is described. Results of studies by other groups and experience at the Huntorf plant in West Germany are included. Feasibility studies performed by General Electric are summarized. The feasibility of air storage in dissolved salt cavities is also demonstrated. (BCS)

  10. Time gating for energy selection and scatter rejection: High-energy pulsed neutron imaging at LANSCE

    NASA Astrophysics Data System (ADS)

    Swift, Alicia; Schirato, Richard; McKigney, Edward; Hunter, James; Temple, Brian

    2015-09-01

    The Los Alamos Neutron Science Center (LANSCE) is a linear accelerator in Los Alamos, New Mexico that accelerates a proton beam to 800 MeV, which then produces spallation neutron beams. Flight path FP15R uses a tungsten target to generate neutrons of energy ranging from several hundred keV to ~600 MeV. The beam structure has micropulses of sub-ns width and period of 1.784 ns, and macropulses of 625 μs width and frequency of either 50 Hz or 100 Hz. This corresponds to 347 micropulses per macropulse, or 1.74 x 104 micropulses per second when operating at 50 Hz. Using a very fast, cooled ICCD camera (Princeton Instruments PI-Max 4), gated images of various objects were obtained on FP15R in January 2015. Objects imaged included blocks of lead and borated polyethylene; a tungsten sphere; and a tungsten, polyethylene, and steel cylinder. Images were obtained in 36 min or less, with some in as little as 6 min. This is novel because the gate widths (some as narrow as 10 ns) were selected to reject scatter and other signal not of interest (e.g. the gamma flash that precedes the neutron pulse), which has not been demonstrated at energies above 14 MeV. This proof-of-principle experiment shows that time gating is possible above 14MeV and is useful for selecting neutron energy and reducing scatter, thus forming clearer images. Future work (simulation and experimental) is being undertaken to improve camera shielding and system design and to precisely determine optical properties of the imaging system.

  11. Selecting herbaceous energy crops for the southeast and midwest/lake states

    SciTech Connect

    Cushman, J.H.; Turhollow, A.F.

    1990-01-01

    This paper summarizes an approach to crop selection and development that has evolved through the five years of species screening and selection in the US Department of Energy's Herbaceous Energy Crops Program. The first phase of this program was designed to identify a number of species for development as energy crops for the Southeast and Midwest/Lake States, specifically as feedstocks for the biochemical and thermochemical conversion processes for alcohol fuels now under development. 14 refs., 1 tab.

  12. Method of depositing epitaxial layers on a substrate

    DOEpatents

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  13. Energy resources in southern Africa: a select bibliography

    SciTech Connect

    Cavan, A.

    1981-01-01

    The aims, progress, and possibilities involved in Southern Africa's energy development are the subject of this 473-item bibliography. The primary items of information described in this document are relatively recent (1975-81), originate from both indigenous and international sources, and are mostly in English, although a few are in French and Portuguese. The presented information focuses on the African continent, the Southern African region, and the nations of Angola, Botswana, Lesotho, Malawi, Mozambique, Namibia, Swaziland, South Africa, Tanzania, Zambia, and Zimbabwe. The energy source topics include alcohol, coal, gas, oil, solar, uranium, water, wind, and wood; as well as a general energy-development category.

  14. Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene

    PubMed Central

    Natterer, Fabian D.; Ha, Jeonghoon; Baek, Hongwoo; Zhang, Duming; Cullen, William; Zhitenev, Nikolai B.; Kuk, Young; Stroscio, Joseph A.

    2016-01-01

    We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers. PMID:27088134

  15. Conducting (Si-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy

    SciTech Connect

    Kim, J.G.; Moorthy, M.; Park, R.M.

    1999-07-01

    As a member of the III-V nitride semiconductor family, AlN, which has a direct energy-gap of 6.2eV, has received much attention as a promising material for many applications. However, despite the promising attributes of AlN for various semiconductor devices, research on AlN has been limited and n-type conducting AlN has not been reported. The objective of this research was to understand the factors impacting the conductivity of AlN and to control the conductivity of this material through intentional doping. Prior to the intentional doping study, growth of undoped AlN epilayers was investigated. Through careful selection of substrate preparation methods and growth parameters, relatively low-temperature molecular beam epitaxial growth of AlN films was established which resulted in insulating material. Intentional Si doping during epilayer growth was found to result in conducting films under specific growth conditions. Above a growth temperature of 900 C, AlN films were insulating, however, below a growth temperature of 900 C, the AlN films were conducting. The magnitude of the conductivity and the growth temperature range over which conducting AlN films could be grown were strongly influenced by the presence of a Ga flux during growth. For instance, conducting, Si-doped, AlN films were grown at a growth temperature of 940 C in the presence of a Ga flux while the films were insulating when grown in the absence of a Ga flux at this particular growth temperature. Also, by appropriate selection of the growth parameters, epilayers with n-type conductivity values as large as 0.2 {Omega}{sup {minus}1} cm{sup {minus}1} for AlN and 17 {Omega}{sup {minus}1} cm{sup {minus}1} for Al{sub 0.75}Ga{sub 0.25}N were grown in this work for the first time.

  16. ENVIRONMENTAL, OPERATIONAL, AND ECONOMIC ASPECTS OF THIRTEEN SELECTED ENERGY TECHNOLOGIES

    EPA Science Inventory

    This report covers the environmental, operational, and economic aspects of thirteen (13) current and developing technologies as applied to the generation of electric power, steam generation, and the conversion of fossil energy into alternative foorms. The following technologies a...

  17. Spectrally Selective Surface Coatings for Energy Efficiency and Solar Applications.

    ERIC Educational Resources Information Center

    Granqvist, C. G.

    1984-01-01

    Outlines how the radiative properties of a surface can be tailored so as to be favorable for efficient utilization of energy. The radiative properties of concern are transmittance, reflectance, absorptance, and emittance. (JN)

  18. Epitaxial BaTiO{sub 3}(100) films on Pt(100): A low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy study

    SciTech Connect

    Foerster, Stefan; Huth, Michael; Schindler, Karl-Michael; Widdra, Wolf

    2011-09-14

    The growth of epitaxial ultrathin BaTiO{sub 3} films on a Pt(100) substrate has been studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy (XPS). The films have been prepared by radio-frequency-assisted magnetron sputter deposition at room temperature and develop a long-range order upon annealing at 900 K in O{sub 2}. By adjusting the Ar and O{sub 2} partial pressures of the sputter gas, the stoichiometry was tuned to match that of a BaTiO{sub 3}(100) single crystal as determined by XPS. STM reveals the growth of continuous BaTiO{sub 3} films with unit cell high islands on top. With LEED already for monolayer thicknesses, the formation of a BaTiO{sub 3}(100)-(1 x 1) structure has been observed. Films of 2-3 unit cell thickness show a brilliant (1 x 1) LEED pattern for which an extended set of LEED I-V data has been acquired. At temperatures above 1050 K the BaTiO{sub 3} thin film starts to decay by formation of vacancy islands. In addition (4 x 4) and (3 x 3) surface reconstructions develop upon prolonged heating.

  19. Energy Saving Glass Lamination via Selective Radio Frequency Heating

    SciTech Connect

    Shawn M. Allan; Patricia M. Strickland; Holly S. Shulman

    2009-11-11

    Ceralink Inc. developed FastFuse™, a rapid, new, energy saving process for lamination of glass and composites using radio frequency (RF) heating technology. The Inventions and Innovations program supported the technical and commercial research and development needed to elevate the innovation from bench scale to a self-supporting technology with significant potential for growth. The attached report provides an overview of the technical and commerical progress achieved for FastFuse™ during the course of the project. FastFuse™ has the potential to revolutionize the laminate manufacturing industries by replacing energy intensive, multi-step processes with an energy efficient, single-step process that allows higher throughput. FastFuse™ transmits RF energy directly into the interlayer to generate heat, eliminating the need to directly heat glass layers and the surrounding enclosures, such as autoclaves or vacuum systems. FastFuse™ offers lower start-up and energy costs (up to 90% or more reduction in energy costs), and faster cycles times (less than 5 minutes). FastFuse™ is compatible with EVA, TPU, and PVB interlayers, and has been demonstrated for glass, plastics, and multi-material structures such as photovoltaics and transparent armor.

  20. Method for making an aluminum or copper substrate panel for selective absorption of solar energy

    NASA Technical Reports Server (NTRS)

    Roberts, M. L.; Sharpe, M. H.; Krupnick, A. C. (Inventor)

    1978-01-01

    A panel is described for selectively absorbing solar energy comprising an aluminum substrate. A zinc layer was covered by a layer of nickel and an outer layer of solar energy absorbing nickel oxide or a copper substrate with a nickel layer. A layer of solar energy absorbing nickel oxide distal from the copper substrate was included. A method for making these panels is disclosed.

  1. Surface-phonon dispersion in ultrathin epitaxial films of Ni on Cu(001)

    NASA Astrophysics Data System (ADS)

    Mohamed, Mohamed H.; Kim, Jae-Sung; Kesmodel, L. L.

    1989-07-01

    New measurements by high-resolution electron-energy-loss spectroscopy confirm the presence of localized film modes for ultrathin epitaxial films of nickel on a copper (001) substrate. These film modes, predicted recently in lattice-dynamical calculations by Chen, Wu, Yao, and Tong [Phys. Rev. B 39, 5617 (1989)] lie above the Cu-substrate bands and correspond to vibrational motion localized in the Ni overlayer. The Rayleigh-mode dispersion for the epitaxial overlayers is also reported.

  2. Energy Saving Glass Lamination via Selective Radio-Frequency Heating

    SciTech Connect

    Shulman, Holly S.; Allan, Shawn M.

    2009-11-11

    This Inventions and Innovations program supported the technical and commercial research and development needed to elevate Ceralink's energy saving process for flat glass lamination from bench scale to a self-supporting technology with significant potential for growth. Radio-frequency heating was any un-explored option for laminating glass prior to this program. With significant commercial success through time and energy savings in the wood, paper, and plastics industries, RF heating was found to have significant promise for the energy intensive glass lamination industry. A major technical goal of the program was to demonstrate RF lamination across a wide range of laminate sizes and materials. This was successfully accomplished, dispelling many skeptics' concerns about the abilities of the technology. Ceralink laminated panels up to 2 ft x 3 ft, with four sets processed simultaneously, in a 3 minute cycle. All major categories of interlayer materials were found to work with RF lamination. In addition to laminating glass, other materials including photovoltaic silicon solar cells, light emitting diodes, metallized glass, plastics (acrylic and polycarbonate), and ceramics (alumina) were found compatible with the RF process. This opens up a wide range of commercial opportunities beyond the initially targeted automotive industry. The dramatic energy savings reported for RF lamination at the bench scale were found to be maintained through the scale up of the process. Even at 2 ft x 3 ft panel sizes, energy savings are estimated to be at least 90% compared to autoclaving or vacuum lamination. With targeted promotion through conference presentations, press releases and internet presence, RF lamination has gained significant attention, drawing large audiences at American Ceramic Society meetings. The commercialization success of the project includes the establishment of a revenue-generating business model for providing process development and demonstrations for potential RF

  3. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGESBeta

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  4. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  5. Selected comments on the ORNL Residential Energy-Use Model

    SciTech Connect

    Herbert, J.H.

    1980-06-01

    This report assesses critical technical aspects of the Oak Ridge National Laboratory (ORNL) Residential Energy Use Model. An important component of the ORNL Model is determination of the thermal performance of new equipment or structures. The examples presented here are illustrative of the type of analytic problems discovered in a detailed assessment of the model. A list of references is appended.

  6. Analyses of Selected Provisions of Proposed Energy Legislation: 2003

    EIA Publications

    2003-01-01

    This study responds to a July 31, 2003 request from Senator Byron L. Dorgan. The study is based primarily on analyses the Energy Information Administration has previously done for studies requested by Congress. It includes analysis of the Renewable Portfolio Standard, Renewable Fuels Standard, production in the Alaskan National Wildlife Refuge, the construction of an Alaskan Natural Gas pipeline, and various tax provisions.

  7. Energy Savings in School Buildings: A Selected Checklist.

    ERIC Educational Resources Information Center

    Wismer, Don, Comp.

    The 43 references in this booklet emphasize practical, rather than theoretical, information. They were chosen on that basis from two computer-retrievable data bases maintained by the U.S. Department of Energy. The citations, for the most part, are arranged by source and include industry pamphlets, journal articles, and state and consultant…

  8. Determinants of Household Use of Selected Energy Star Appliances

    EIA Publications

    2016-01-01

    The main objective of this paper is to test a series of hypotheses regarding the influences of household characteristics (such as education, age, sex, race, income, and size of household), building characteristics (such as age, ownership, and type), and electricity prices on the use of ENERGY STAR appliances.

  9. Dark Energy, Anthropic Selection Effects, Entropy and Life

    NASA Astrophysics Data System (ADS)

    Egan, Chas A.

    2010-05-01

    According to the standard LCDM model, the matter and dark energy densities (rho_m and rho_DE) are only comparable for a brief time. We address the cosmic coincidence problem under LCDM and generalized dark energy models by considering the temporal distribution of terrestrial planets. We compare the Sun to representative stellar samples in 11 properties plausibly related to life. We find the Sun to be most anomalous in mass and galactic orbital eccentricity. When the 11 properties are considered together, the observed "anomalies" are consistent with statistical noise. This contrasts with previous work suggesting anthropic explanations for the Sun's high mass. The long-term future of dissipative processes (such as life) depends on the continued ability to use free energy to increase the total entropy. The entropy budget of the present observable Universe is dominated by supermassive black holes in galactic cores. We report a new entropy budget of the Universe with quantified uncertainties for all components. We find the total entropy in the observable Universe to be S_{obs} = 3.1^{+3.0}_{-1.7} x 10^{104} k, at least an order of magnitude higher than previous estimates due to improved measurements of the mass function of supermassive black holes (which dominate the budget). We evaluate upper bounds on the entropy of a comoving volume. Under the assumption that energy in matter is constant in a comoving volume, the availability of free energy is found to be finite and the future entropy in the volume is limited to a constant of order 10^{123} k. Through this work we uncover a number of unresolved questions with implications for the ultimate fate of the Universe.

  10. Magnetic properties of novel epitaxial films

    SciTech Connect

    Bader, S.D.; Moog, E.R.

    1986-09-01

    The surface magneto-optic Kerr effect (SMOKE) is used to explore the magnetism of ultra-thin Fe Films extending into the monolayer regime. Both bcc ..cap alpha..-Fe and fcc ..gamma..-Fe single-crystalline, multilayer films are prepared on the bulk-terminated (1 x 1) structures of Au(100) and Cu(100), respectively. The characterizations of epitaxy and growth mode are performed using low energy electron diffraction and Auger electron spectroscopy. Monolayer-range Fe/Au(100) is ferromagnetic with a lower Curie temperature than bulk ..cap alpha..-Fe. The controversial ..gamma..-Fe/Cu(100) system exhibits a striking, metastable, surface magnetic phase at temperatures above room temperature, but does not exhibit bulk ferromagnetism.

  11. Multicriteria Decision Analysis of Material Selection of High Energy Performance Residential Building

    NASA Astrophysics Data System (ADS)

    Čuláková, Monika; Vilčeková, Silvia; Katunská, Jana; Krídlová Burdová, Eva

    2013-11-01

    In world with limited amount of energy sources and with serious environmental pollution, interest in comparing the environmental embodied impacts of buildings using different structure systems and alternative building materials will be increased. This paper shows the significance of life cycle energy and carbon perspective and the material selection in reducing energy consumption and emissions production in the built environment. The study evaluates embodied environmental impacts of nearly zero energy residential structures. The environmental assessment uses framework of LCA within boundary: cradle to gate. Designed alternative scenarios of material compositions are also assessed in terms of energy effectiveness through selected thermal-physical parameters. This study uses multi-criteria decision analysis for making clearer selection between alternative scenarios. The results of MCDA show that alternative E from materials on nature plant base (wood, straw bales, massive wood panel) present possible way to sustainable perspective of nearly zero energy houses in Slovak republic

  12. Tandem filters using frequency selective surfaces for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

    DOEpatents

    Dziendziel, Randolph J.; Baldasaro, Paul F.; DePoy, David M.

    2010-09-07

    This invention relates to the field of thermophotovoltaic (TPV) direct energy conversion. In particular, TPV systems use filters to minimize parasitic absorption of below bandgap energy. This invention constitutes a novel combination of front surface filters to increase TPV conversion efficiency by reflecting useless below bandgap energy while transmitting a very high percentage of the useful above bandgap energy. In particular, a frequency selective surface is used in combination with an interference filter. The frequency selective surface provides high transmission of above bandgap energy and high reflection of long wavelength below bandgap energy. The interference filter maintains high transmission of above bandgap energy and provides high reflection of short wavelength below bandgap energy and a sharp transition from high transmission to high reflection.

  13. Tandem filters using frequency selective surfaces for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

    DOEpatents

    Dziendziel, Randolph J.; DePoy, David Moore; Baldasaro, Paul Francis

    2007-01-23

    This invention relates to the field of thermophotovoltaic (TPV) direct energy conversion. In particular, TPV systems use filters to minimize parasitic absorption of below bandgap energy. This invention constitutes a novel combination of front surface filters to increase TPV conversion efficiency by reflecting useless below bandgap energy while transmitting a very high percentage of the useful above bandgap energy. In particular, a frequency selective surface is used in combination with an interference filter. The frequency selective surface provides high transmission of above bandgap energy and high reflection of long wavelength below bandgap energy. The interference filter maintains high transmission of above bandgap energy and provides high reflection of short wavelength below bandgap energy and a sharp transition from high transmission to high reflection.

  14. Evaluation of selected energy-recovery systems. Working paper

    SciTech Connect

    Desai, T.M.; Salama, S.Y.; Kothari, V.S.

    1983-02-28

    The purpose of the paper is to document key inputs and results of work performed in the area of Energy Recovery Systems (ERS) in support of the Industrial Utilization (IU) staff. This support consisted of the following four main activities: Integration and validation of technology performance and cost data generated by technology developers under contract with GRI; Developing characteristics of the industrial test markets and refining the representation of these markets when needed, e.g., segmentation of certain markets into more-detailed unit size categories or further characterization of competing process; Evaluation and analysis of future market potentials for each ERS in all applicable markets; and Projecting the total impacts of these ERS on energy and gas demand.

  15. Selective chemical detection by energy modulation of sensors

    DOEpatents

    Stetter, J.R.; Otagawa, T.

    1985-05-20

    A portable instrument for use in the field in detecting, identifying, and quantifying a component of a sampled fluid includes a sensor which chemically reacts with the component of interest or a derivative thereof, an electrical heating filament for heating the sample before it is applied to the sensor, and modulating means for continuously varying the temperature of the filament (and hence the reaction rate) between two values sufficient to produce the chemical reaction. In response to this thermal modulation, the sensor produces a modulated output signal, the modulation of which is a function of the activation energy of the chemical reaction, which activation energy is specific to the particular component of interest and its concentration. Microprocessor means compares the modulated output signal with standard responses for a plurality of components to identify and quantify the particular component of interest. 4 figs.

  16. Apparatus for generating coherent infrared energy of selected wavelength

    DOEpatents

    Stevens, C.G.

    A tunable source of coherent infrared energy includes a heat pipe having an intermediate region at which cesium is heated to vaporizing temperature and end regions at which the vapor is condensed and returned to the intermediate region for reheating and recirculation. Optical pumping light is directed along the axis of the heat pipe through a first end window to stimulate emission of coherent infrared energy which is transmitted out through an opposite end window. A porous walled tubulation extends along the axis of the heat pipe and defines a region in which cesium vapor is further heated to a temperature sufficient to dissociate cesium dimers which would decrease efficiency by absorbing pump light. Efficient generation of any desired infrared wavelength is realized by varying the wavelength of the pump light.

  17. Apparatus for generating coherent infrared energy of selected wavelength

    DOEpatents

    Stevens, Charles G.

    1985-01-01

    A tunable source (11) of coherent infrared energy includes a heat pipe (12) having an intermediate region (24) at which cesium (22) is heated to vaporizing temperature and end regions (27, 28) at which the vapor is condensed and returned to the intermediate region (24) for reheating and recirculation. Optical pumping light (43) is directed along the axis of the heat pipe (12) through a first end window (17) to stimulate emission of coherent infrared energy which is transmitted out through an opposite end window (18). A porous walled tubulation (44) extends along the axis of the heat pipe (12) and defines a region (46) in which cesium vapor is further heated to a temperature sufficient to dissociate cesium dimers which would decrease efficiency by absorbing pump light (43). Efficient generation of any desired infrared wavelength is realized by varying the wavelength of the pump light (43).

  18. Growth-induced electronic properties of epitaxial graphene

    NASA Astrophysics Data System (ADS)

    First, Phillip

    2012-02-01

    The growth of epitaxial graphene on silicon carbide is challenging to understand and control, yet rife with scientific and technological opportunities. This is due in part to different growth-induced structures such as the ``moire'' alignment of graphene layers in multilayer epitaxial graphene on SiC(0001) and the formation of sidewall ribbons at natural and lithographically-defined SiC(0001) step-bunches (nanofacets). We apply scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the local energy bands of such growth-induced structures. STS at cryogenic temperatures and large magnetic fields creates a comb of discrete Landau level energies that we use to quantitatively characterize the local electronic properties.

  19. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  20. Selective chemical detection by energy modulation of sensors

    DOEpatents

    Stetter, Joseph R.; Otagawa, Takaaki

    1991-01-01

    A portable instrument for use in the field in detecting, identifying, and quantifying a component of a sampled fluid includes a sensor which chemically reacts with the component of interest or a derivative thereof, an electrical heating filament for heating the sample before it is applied to the sensor, and modulator for continuously varying the temperature of the filament (and hence the reaction rate) between two values sufficient to produce the chemical reaction. In response to this thermal modulation, the sensor produces a modulated output signal, the modulation of which is a function of the activation energy of the chemical reaction, which activation energy is specific to the particular component of interest and its concentration. Microprocessor which compares the modulated output signal with standard responses for a plurality of components to identify and quantify the particular component of interest. In particular, the concentration of the component of interest is proportional to the amplitude of the modulated output signal, while the identifying activation output energy of the chemical interaction indicative of that component is proportional to a normalized parameter equal to the peak-to-peak amplitude divided by the height of the upper peaks above a base line signal level.

  1. Selective chemical detection by energy modulation of sensors

    DOEpatents

    Stetter, J.R.; Otagawa, T.

    1991-09-10

    A portable instrument for use in the field in detecting, identifying, and quantifying a component of a sampled fluid includes a sensor which chemically reacts with the component of interest or a derivative thereof, an electrical heating filament for heating the sample before it is applied to the sensor, and modulator for continuously varying the temperature of the filament (and hence the reaction rate) between two values sufficient to produce the chemical reaction. In response to this thermal modulation, the sensor produces a modulated output signal, the modulation of which is a function of the activation energy of the chemical reaction, which activation energy is specific to the particular component of interest and its concentration. Microprocessor which compares the modulated output signal with standard responses for a plurality of components to identify and quantify the particular component of interest. In particular, the concentration of the component of interest is proportional to the amplitude of the modulated output signal, while the identifying activation output energy of the chemical interaction indicative of that component is proportional to a normalized parameter equal to the peak-to-peak amplitude divided by the height of the upper peaks above a base line signal level. 5 figures.

  2. ENVIRONMENTAL CONSIDERATIONS OF SELECTED ENERGY-CONSERVING MANUFACTURING PROCESS OPTIONS. VOLUME XVII. NITROGEN OXIDES SUMMARY REPORT

    EPA Science Inventory

    Arthur D. Little, Inc. undertook a study of the 'Environmental Consideration of Selected Energy-Conserving Manufacturing Process Options.' Some 80 industrial process options were examined in 13 industrial sectors. Results were published in 15 volumes, including a summary, industr...

  3. ENVIRONMENTAL CONSIDERATIONS OF SELECTED ENERGY-CONSERVING MANUFACTURING PROCESS OPTIONS. VOLUME XX: TOXICS/ORGANICS

    EPA Science Inventory

    Arthur D. Little, Inc. undertook a study of the 'Environmental Considerations of Selected Energy-Conserving Manufacturing Process Options.' Some 80 industrial process options were examined in13 industrial sectors. Results were published in 15 volumes, including a summary, industr...

  4. Energy/Environment/Economy. An Annotated Bibliography of Selected U.S. Government Publications Concerning United States Energy Policy.

    ERIC Educational Resources Information Center

    ENVIRO/INFO, Green Bay, WI.

    This annotated bibliography attempts to provide a selective listing of 109 U.S. federal government publications germane to the energy crisis and its attendant environmental and economic implications. Primary emphasis is placed upon documents presenting energy policy issues which have emerged, plus statistical reportage which provides quantitative…

  5. Energy/Environment/Economy. An Annotated Bibliography of Selected U.S. Government Publications Concerning United States Energy Policy, Supplement.

    ERIC Educational Resources Information Center

    ENVIRO/INFO, Green Bay, WI.

    This annotated bibliography supplements ED 077 704. It provides a selective listing of 93 U.S. Federal Government publications germane to the energy crisis and its attendant environmental and economic implications. Primary emphasis is placed upon documents presenting energy policy issues which have emerged, plus statistical reportage which…

  6. A novel fast-neutron detector concept for energy-selective imaging and imaging spectroscopy.

    PubMed

    Cortesi, M; Dangendorf, V; Zboray, R; Prasser, H-M

    2014-07-01

    We present and discuss the operational principle of a new fast-neutron detector concept suitable for either energy-selective imaging or for imaging spectroscopy. The detector is comprised of a series of energy-selective stacks of converter foils immersed in a noble-gas based mixture, coupled to a position-sensitive charge readout. Each foil in the various stacks is made of two layers of different thicknesses, fastened together: a hydrogen-rich (plastic) layer for neutron-to-proton conversion, and a hydrogen-free coating to selectively stop/absorb the recoil protons below a certain energy cut-off. The neutron-induced recoil protons, that escape the converter foils, release ionization electrons in the gas gaps between consecutive foils. The electrons are then drifted towards and localized by a position-sensitive charge amplification and readout stage. Comparison of the images detected by stacks with different energy cut-offs allows energy-selective imaging. Neutron energy spectrometry is realized by analyzing the responses of a sufficient large number of stacks of different energy response and unfolding techniques. In this paper, we present the results of computer simulation studies and discuss the expected performance of the new detector concept. Potential applications in various fields are also briefly discussed, in particularly, the application of energy-selective fast-neutron imaging for nuclear safeguards application, with the aim of determining the plutonium content in Mixed Oxide (MOX) fuels. PMID:25085132

  7. A novel fast-neutron detector concept for energy-selective imaging and imaging spectroscopy

    SciTech Connect

    Cortesi, M.; Prasser, H.-M.; Dangendorf, V.; Zboray, R.

    2014-07-15

    We present and discuss the operational principle of a new fast-neutron detector concept suitable for either energy-selective imaging or for imaging spectroscopy. The detector is comprised of a series of energy-selective stacks of converter foils immersed in a noble-gas based mixture, coupled to a position-sensitive charge readout. Each foil in the various stacks is made of two layers of different thicknesses, fastened together: a hydrogen-rich (plastic) layer for neutron-to-proton conversion, and a hydrogen-free coating to selectively stop/absorb the recoil protons below a certain energy cut-off. The neutron-induced recoil protons, that escape the converter foils, release ionization electrons in the gas gaps between consecutive foils. The electrons are then drifted towards and localized by a position-sensitive charge amplification and readout stage. Comparison of the images detected by stacks with different energy cut-offs allows energy-selective imaging. Neutron energy spectrometry is realized by analyzing the responses of a sufficient large number of stacks of different energy response and unfolding techniques. In this paper, we present the results of computer simulation studies and discuss the expected performance of the new detector concept. Potential applications in various fields are also briefly discussed, in particularly, the application of energy-selective fast-neutron imaging for nuclear safeguards application, with the aim of determining the plutonium content in Mixed Oxide (MOX) fuels.

  8. Black tungsten selective optical coatings for photothermal solar energy conversion

    NASA Astrophysics Data System (ADS)

    Gesheva, K. A.; Gogova, D. S.; Stoyanov, G.

    1992-08-01

    By pyrolytic decomposition of W(CO)6 in the presence of an oxygen bleed black tungsten solar selective coatings have been deposited on different substrates - quartz, silicon and stainless steel. Quartz substrates were used to check the opacity of the films deposited; the silicon substrates were used to study the possibility of obtaining low-resistance material when fully annealed and the steel substrates to study the properties of the films on substrates suitable for a large scale application. The films were obtained at a temperature of 400°C and further partially annealed in a reducing atmosphere. The dependence of the structure and chemical composition on the annealing temperature was studied, as well as reflectance measurements in the visible and in the infrared region.

  9. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  10. Photoluminescence properties of ZnTe layers grown by photo-assisted metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Gheyas, Syed Irfan; Ikejiri, Makoto; Ogata, Toshihiro; Ogawa, Hiroshi; Nishio, Mitsuhiro

    1994-12-01

    Effects of light illumination on the photoluminescence (PL) properties of ZnTe has been investigated by using epitaxial layers grown with different carrier gases, transport rate of source materials and light sources or by introducing triethylaluminum (TEAl) as a dopant. Free exciton emission can be observed in only the epitaxial layers grown with illumination under H 2 atmosphere, implying that the illumination is effective for the growth of good quality ZnTe layers. The illumination strengthens the transition due to excitons bound to donor impurities, namely Cl which is substituted into Te lattice site, at low substrate temperature. These effects are closely related to the use of photons having an energy higher than the bandgap of ZnTe. It seems that the photo-assisted metalorganic vapor phase epitaxy (MOVPE) technique also brings about the effective formation of Al donor by suppressing the generation of the complex of Al and Zn-vacancy in the ZnTe epitaxial layer.

  11. Self-selection and the estimation of energy conservation program benefits

    SciTech Connect

    Horowitz, M.J.

    1995-12-31

    The necessity to correct behavioral models for selectivity bias has long been recognized within the economics profession as critical to deriving parameter estimates that are unbiased and consistent. The purpose of this paper is to examine the problem of selectivity bias, specifically self-selection and free riders, in the estimation of behavioral models of energy conservation program benefits. Like for all social programs, objective assessment of the social and private value of energy conservation programs requires accurate quantification of their direct benefits. Particular attention is given in this paper to the nature of energy conservation program self-selection when these programs provide goods and services that are capable of being purchased privately in competitive markets. In this case, the source of the selectivity problem can be traced to two interrelated decisions, that is, the decision to participate in energy efficiency programs and the decision to invest in energy efficiency measures that are promoted by the program. This paper describes why it is necessary to recognize, and correct for, both forms of selectivity. It also offers suggestions for what the underlying determinants of self-selection might be and how they may affect the estimates of program impacts.

  12. Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe{sub 2}

    SciTech Connect

    Nelson, A.J.; Berry, G.; Rockett, A.

    1997-04-01

    Core-level and valence band photoemission from semiconductors has been shown to exhibit binding energy differences between surface atoms and bulk atoms, thus allowing one to unambiguously distinguish between the two atomic positions. Quite clearly, surface atoms experience a potential different from the bulk due to the lower coordination number - a characteristic feature of any surface is the incomplete atomic coordination. Theoretical accounts of this phenomena are well documented in the literature for III-V and II-VI semiconductors. However, surface state energies corresponding to the equilibrium geometry of (100) and (111) surfaces of Cu-based ternary chalcopyrite semiconductors have not been calculated or experimental determined. These compounds are generating great interest for optoelectronic and photovoltaic applications, and are an isoelectronic analog of the II-VI binary compound semiconductors. Surface core-level binding energy shifts depend on the surface cohesive energies, and surface cohesive energies are related to surface structure. For ternary compound semiconductor surfaces, such as CuInSe{sub 2}, one has the possibility of variations in surface stoichiometry. Applying standard thermodynamical calculations which consider the number of individual surface atoms and their respective chemical potentials should allow one to qualitatively determine the magnitude of surface core-level shifts and, consequently, surface state energies.

  13. Quantification of correlational selection on thermal physiology, thermoregulatory behavior, and energy metabolism in lizards

    PubMed Central

    Artacho, Paulina; Saravia, Julia; Ferrandière, Beatriz Decencière; Perret, Samuel; Le Galliard, Jean-François

    2015-01-01

    Phenotypic selection is widely accepted as the primary cause of adaptive evolution in natural populations, but selection on complex functional properties linking physiology, behavior, and morphology has been rarely quantified. In ectotherms, correlational selection on thermal physiology, thermoregulatory behavior, and energy metabolism is of special interest because of their potential coadaptation. We quantified phenotypic selection on thermal sensitivity of locomotor performance (sprint speed), thermal preferences, and resting metabolic rate in captive populations of an ectothermic vertebrate, the common lizard, Zootoca vivipara. No correlational selection between thermal sensitivity of performance, thermoregulatory behavior, and energy metabolism was found. A combination of high body mass and resting metabolic rate was positively correlated with survival and negatively correlated with fecundity. Thus, different mechanisms underlie selection on metabolism in lizards with small body mass than in lizards with high body mass. In addition, lizards that selected the near average preferred body temperature grew faster that their congeners. This is one of the few studies that quantifies significant correlational selection on a proxy of energy expenditure and stabilizing selection on thermoregulatory behavior. PMID:26380689

  14. DOE (Department of Energy) Epidemiologic Research Program: Selected bibliography

    SciTech Connect

    Not Available

    1991-01-01

    The objective of the Department of Energy (DOE) Epidemiologic Research Program is to determine the human health effects resulting from the generation and use of energy, and from the operation of DOE facilities. The program has been divided into seven general areas of activity: the Radiation Effects Research Foundation (RERF) which supports studies of survivors of the atomic weapons in Hiroshima and Nagasaki, mortality and morbidity studies of DOE workers, studies on internally deposited alpha emitters, medical/histologic studies, studies on the genetic aspects of radiation damage, community health surveillance studies, and the development of computational techniques and of databases to make the results as widely useful as possible. Excluding the extensive literature from the RERF, the program has produced 380 publications in scientific journals, contributing significantly to improving the understanding of the health effects of ionizing radiation exposure. In addition, a large number of public presentations were made and are documented elsewhere in published proceedings or in books. The purpose of this bibliograhpy is to present a guide to the research results obtained by scientists supported by the program. The bibliography, which includes doctoral theses, is classified by national laboratory and by year. Multi-authored studies are indicated only once, according to the main supporting laboratory.

  15. Selective excitation, relaxation, and energy channeling in molecular systems

    SciTech Connect

    Rhodes, W.C.

    1993-08-01

    Research involves theoretical studies of response, relaxation, and correlated motion in time-dependent behavior of large molecular systems ranging from polyatomic molecules to protein molecules in their natural environment. Underlying theme is subsystem modulation dynamics. Main idea is that quantum mechanical correlations between components of a system develop with time, playing a major role in determining the balance between coherent and dissipative forces. Central theme is interplay of coherence and dissipation in determining the nature of dynamic structuring and energy flow in molecular transformation mechanisms. Subsystem equations of motion are being developed to show how nonlinear, dissipative dynamics of a particular subsystem arise from correlated interactions with the rest of the system (substituent groups, solvent, lattice modes, etc.); one consequence is resonance structures and networks. Quantum dynamics and thermodynamics are being applied to understand control and energy transfer mechanisms in biological functions of protein molecules; these mechanisms are both global and local. Besides the above theory, the research deals with phenomenological aspects of molecular systems.

  16. High spin spectroscopy near the N=Z line: Channel selection and excitation energy systematics

    SciTech Connect

    Svensson, C.E.; Cameron, J.A.; Flibotte, S.

    1996-12-31

    The total {gamma}-ray and charged-particle energies emitted in fusion-evaporation reactions leading to N=Z compound systems in the A = 50-70 mass region have been measured with the 8{pi} {gamma}-ray spectrometer and the miniball charged-particle detector array. A new method of channel selection has been developed which combines particle identification with these total energy measurements and greatly improves upon the selectivity possible with particle detection alone. In addition, the event by event measurement of total {gamma}-ray energies using the BGO ball of the 8{pi} spectrometer has allowed a determination of excitation energies following particle evaporation for a large number of channels in several different reactions. The new channel selection procedure and excitation energy systematics are illustrated with data from the reaction of {sup 24}Mg on {sup 40}Ca at E{sub lab} = 80MeV.

  17. Guided-wave approaches to spectrally selective energy absorption

    NASA Technical Reports Server (NTRS)

    Stegeman, G. I.; Burke, J. J.

    1987-01-01

    Results of experiments designed to demonstrate spectrally selective absorption in dielectric waveguides on semiconductor substrates are reported. These experiments were conducted with three waveguides formed by sputtering films of PSK2 glass onto silicon-oxide layers grown on silicon substrates. The three waveguide samples were studied at 633 and 532 nm. The samples differed only in the thickness of the silicon-oxide layer, specifically 256 nm, 506 nm, and 740 nm. Agreement between theoretical predictions and measurements of propagation constants (mode angles) of the six or seven modes supported by these samples was excellent. However, the loss measurements were inconclusive because of high scattering losses in the structures fabricated (in excess of 10 dB/cm). Theoretical calculations indicated that the power distribution among all the modes supported by these structures will reach its steady state value after a propagation length of only 1 mm. Accordingly, the measured loss rates were found to be almost independent of which mode was initially excited. The excellent agreement between theory and experiment leads to the conclusion that low loss waveguides confirm the predicted loss rates.

  18. Carbon-Water-Energy Relations for Selected River Basins

    NASA Technical Reports Server (NTRS)

    Choudhury, B. J.

    1998-01-01

    A biophysical process-based model was run using satellite, assimilated and ancillary data for four years (1987-1990) to calculate components of total evaporation (transpiration, interception, soil and snow evaporation), net radiation, absorbed photosynthetically active radiation and net primary productivity over the global land surface. Satellite observations provided fractional vegetation cover, solar and photosynthetically active radiation incident of the surface, surface albedo, fractional cloud cover, air temperature and vapor pressure. The friction velocity and surface air pressure are obtained from a four dimensional data assimilation results, while precipitation is either only surface observations or a blended product of surface and satellite observations. All surface and satellite data are monthly mean values; precipitation has been disaggregated into daily values. All biophysical parameters of the model are prescribed according to published records. From these global land surface calculations results for river basins are derived using digital templates of basin boundaries. Comparisons with field observations (micrometeorologic, catchment water balance, biomass production) and atmospheric water budget analysis for monthly evaporation from six river basins have been done to assess errors in the calculations. Comparisons are also made with previous estimates of zonal variations of evaporation and net primary productivity. Efficiencies of transpiration, total evaporation and radiation use, and evaporative fraction for selected river basins will be presented.

  19. Energy-selective SESD imaging utilizing a CMA

    NASA Astrophysics Data System (ADS)

    Larson, L. A.; Soria, F.; Poppa, H.

    1980-12-01

    A particularly simple conversion of a scanning Auger system for ESD ion energy distributions and scanning ESD has been developed. This approach combines the advantages of the small spot-size electron guns and mapping systems developed for SAM with the capability of ESD for the detection of hydrogen. Our intended use for the device is detection and mapping of surface concentrations of hydrogen on metals. The characteristics of SESD are illustrated with the preliminary results of an investigation into the ESD properties of hydrogenic adsorbates on Nb. It is shown that the ESDIED exhibit distinct differences indicative of the surface preparation, and that the ESD ion angular distributions have an effect on the observed contrast relationships in SESD.

  20. Energy-selective filtration of dental x-ray beams

    SciTech Connect

    Gelskey, D.E.; Baker, C.G.

    1981-11-01

    Samarium is known for its ability to filter simultaneously low- and high-energy x-ray photons from an x-ray beam that are not useful in producing a diagnostic radiograph. This study was undertaken to determine the optimum thickness of samarium required to minimize patient exposure and exposure time. The results indicate that use of a filter thickness of 0.16 mm. minimized patient radiation exposure and permitted the use of an exposure time sufficiently short to minimize motion unsharpness. The incorporation of a 0.16 mm. samarium filter in the x-ray beam reduced exposure by about 40 percent as compared to a 2.5 mm. aluminum filter; the exposure time must be increased approximately twice to obtain optical densities equivalent to those produced with aluminum filtration.

  1. BVRI Standard Stars Near Selected Very High Energy Blazars

    NASA Astrophysics Data System (ADS)

    Pace, Cameron; Pearson, R.; Moody, J. W.; Joner, M. D.

    2010-01-01

    The nature of blazar variability is a test of the standard model of Active Galactic Nuclei (AGN). To be useful, measurements of blazar intensity must be compared to standard stars that have been tied into a standard photometric system. To aid the long-term study of blazars, we have measured BVRI magnitudes for six to eight comparison stars near the eight northern Very High Energy (VHE) blazars published by Horan & Weekes (2008). Our magnitudes have been tied into the standard stars published by Landolt (2009). The stars we have measured bracket the expected range of magnitudes between active and inactive phases of the blazars. Preliminary analysis of our results indicates an RMS error better than 0.02 magnitudes in all bands. Our measurements of comparison stars generally agree very well with previously published values. We are grateful to Brigham Young University and the National Science Foundation for their financial support.

  2. Catalog of selected heavy duty transport energy management models

    NASA Technical Reports Server (NTRS)

    Colello, R. G.; Boghani, A. B.; Gardella, N. C.; Gott, P. G.; Lee, W. D.; Pollak, E. C.; Teagan, W. P.; Thomas, R. G.; Snyder, C. M.; Wilson, R. P., Jr.

    1983-01-01

    A catalog of energy management models for heavy duty transport systems powered by diesel engines is presented. The catalog results from a literature survey, supplemented by telephone interviews and mailed questionnaires to discover the major computer models currently used in the transportation industry in the following categories: heavy duty transport systems, which consist of highway (vehicle simulation), marine (ship simulation), rail (locomotive simulation), and pipeline (pumping station simulation); and heavy duty diesel engines, which involve models that match the intake/exhaust system to the engine, fuel efficiency, emissions, combustion chamber shape, fuel injection system, heat transfer, intake/exhaust system, operating performance, and waste heat utilization devices, i.e., turbocharger, bottoming cycle.

  3. Epitaxial growth and heterostructure synthesis by ion beam deposition (IBD)

    SciTech Connect

    Herbots, N.; Appleton, B.R.; Noggle, T.S.; Pennycook, S.J.; Zuhr, R.A.; Zehner, D.M.

    1986-01-01

    The synthesis of heterostructures and the possibility of low-temperature epitaxy by direct ion beam deposition at low energies (10 to 200 eV) were investigated both theoretically and experimentally. Monte-Carlo simulations of ion-solid interactions were used to study collision processes during IBD and have led to a qualitative understanding of the physical parameters involved in the deposition process. /sup 30/Si and /sup 74/Ge were deposited on Si(100) and Ge(100) directly from mass- and energy-analyzed ion beams. Ge/Si multilayers with interfaces as sharp as 0.35 nm were formed by IBD at 65 eV. Reactive ion etching with 20 eV /sup 37/Cl was used to clean Si surfaces in-situ at 625 and 870/sup 0/K. IBD epitaxy was then observed between 625 and 870/sup 0/K with ion energies ranging from 10 to 65 eV. /sup 30/Si films on Si(100) grown at 700/sup 0/K exhibited an ion channeling minimum yield of 4.8%. The dopant species in the substrate affected the occurrence of silicon epitaxy below 870/sup 0/K. Cross-section transmission electron microscopy (TEM) showed that dislocation loops were formed within the substrate during heated deposition, at a depth larger than 40 nm below the bombarded region. A uniaxial lattice expansion normal to the surface was measured in IBD crystals by x-ray Bragg reflection profiling and ion channeling. It is concluded that epitaxial layers and heterostructures can be formed at low temperature by IBD.

  4. Energy Saving Glass Lamination via Selective Radio Frequency Heating

    SciTech Connect

    Allan, Shawn M; Baranova, Inessa; Poley, Joseph; Reis, Henrique

    2012-02-27

    This project focused on advancing radio-frequency (RF) lamination technology closer to commercial implementation, in order to reduce the energy intensity of glass lamination by up to 90%. Lamination comprises a wide range of products including autoglass, architectural safety and innovative design glass, transparent armor (e.g. bullet proof glass), smart glass, mirrors, and encapsulation of photovoltaics. Lamination is also the fastest growing segment of glass manufacturing, with photovoltaics, architectural needs, and an anticipated transition to laminated side windows in vehicles. The state-of-the-art for glass lamination is to use autoclaves, which apply heat and uniform gas pressure to bond the laminates over the course of 1 to 18 hours. Laminates consist of layers of glass or other materials bonded with vinyl or urethane interlayers. In autoclaving, significant heat energy is lost heating the chamber, pressurized air, glass racks, and the glass. In RF lamination, the heat is generated directly in the vinyl interlayer, causing it to heat and melt quickly, in just 1 to 10 minutes, without significantly heating the glass or the equipment. The main purpose of this project was to provide evidence that low energy, rapid RF lamination quality met the same standards as conventionally autoclaved windows. The development of concepts for laminating curved glass with RF lamination was a major goal. Other primary goals included developing a stronger understanding of the lamination product markets described above, and to refine the potential benefits of commercial implementation. The scope of the project was to complete implementation concept studies in preparation for continuation into advanced development, pilot studies, and commercial implementation. The project consisted of 6 main tasks. The first dealt with lamination with poly-vinyl butyral (PVB) interlayers, which prior work had shown difficulties in achieving good quality laminates, working with Pilkington North

  5. Energy Saving Glass Lamination via Selective Radio Frequency Heating

    SciTech Connect

    Allan, Shawn M.

    2012-02-27

    This project focused on advancing radio-frequency (RF) lamination technology closer to commercial implementation, in order to reduce the energy intensity of glass lamination by up to 90%. Lamination comprises a wide range of products including autoglass, architectural safety and innovative design glass, transparent armor (e.g. bullet proof glass), smart glass, mirrors, and encapsulation of photovoltaics. Lamination is also the fastest growing segment of glass manufacturing, with photovoltaics, architectural needs, and an anticipated transition to laminated side windows in vehicles. The state-of-the-art for glass lamination is to use autoclaves, which apply heat and uniform gas pressure to bond the laminates over the course of 1 to 18 hours. Laminates consist of layers of glass or other materials bonded with vinyl or urethane interlayers. In autoclaving, significant heat energy is lost heating the chamber, pressurized air, glass racks, and the glass. In RF lamination, the heat is generated directly in the vinyl interlayer, causing it to heat and melt quickly, in just 1 to 10 minutes, without significantly heating the glass or the equipment. The main purpose of this project was to provide evidence that low energy, rapid RF lamination quality met the same standards as conventionally autoclaved windows. The development of concepts for laminating curved glass with RF lamination was a major goal. Other primary goals included developing a stronger understanding of the lamination product markets described above, and to refine the potential benefits of commercial implementation. The scope of the project was to complete implementation concept studies in preparation for continuation into advanced development, pilot studies, and commercial implementation. The project consisted of 6 main tasks. The first dealt with lamination with poly-vinyl butyral (PVB) interlayers, which prior work had shown difficulties in achieving good quality laminates, working with Pilkington North

  6. Energy Conservation: A Workshop for Selected Eastern U.S. Industrial Arts Teacher Educators.

    ERIC Educational Resources Information Center

    Wenig, Robert E., Ed.

    This set of 25 instructional modules was produced by a group of industrial arts teacher educators, local teachers, and supervisors from eastern United States. Topic areas of these modules include: societal implications of the energy situation; awareness of energy terms, supply, and use; assessment of conventional and selected renewable alternative…

  7. Erosive wear of selected materials for fossil energy applications

    SciTech Connect

    Adler, Thomas A.; Rawers, James C.; Tylczak, Joseph H.; Hawk, Jeffrey A.

    2001-01-01

    A number of materials have been evaluated to determine their erosion resistance for fossil energy applications. This is part of a larger program to study wear and corrosion at Albany Research Center. This paper will present the results for some of these materials, including FeAl, FeAl cermets, WC-Co cemented carbides, Si3N4-MoSi2, Si3N4, Stellite 6B, white cast irons and 440C steel. Trends in erosion rates due to material properties and erosive conditions will be presented. FeAl cermets performed well compared to the WC-Co cemented carbides. The interparticle spacing of the WC-Co cemented carbides correlated with the erosion rate. The erosion rate of the WC-Co cemented carbides decreased as the interparticle spacing decreased. It is important to realize that erosion resistance is not an intrinsic material property, but is a system response. A change in the wear environment can significantly alter the relative rankings of materials with respect to their wear rate. For example, at relatively low velocities, the carbides in the white cast irons are more erosion resistant than the matrix, while at higher velocities the matrix is more erosion resistant.

  8. Epitaxial Cd3As2 Thin Films Synthesized by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Schumann, Timo; Goyal, Manik; Stemmer, Susanne

    Cd3As2 is a three-dimensional (3D) Dirac semimetal, i.e. it possesses Dirac cones in a 3D bulk state where the band dispersion relation is linear near the Fermi energy. Cd3As2 is has raised considerable interest due to its high electron mobilities in bulk crystals and for novel quantum phenomena, such as chiral anomalies. However, few studies have been performed using thin films of Cd3As2. In this presentation, we report on the synthesis of Cd3As2 thin films by molecular beam epitaxy (MBE). Single phase, epitaxial films were grown on undoped GaSb(111)B substrates with the (112) facet of Cd3As2 parallel to the GaSb(111) surface. We report on the structural quality and orientation variants in the films. Electrical transport properties indicate electron mobilities exceeding 6000 cm2V-1s-1. We discuss the impact of the MBE growth parameters and substrate preparation on the structural and electrical properties of the films.

  9. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

    SciTech Connect

    Antonov, A. V.; Kudryavtsev, K. E. Shengurov, D. V.; Shmagin, V. B.; Krasilnik, Z. F.

    2013-11-15

    The photocurrent spectra of Si:Er/Si epitaxial diode structures are studied. It is shown that the nature of the sub-band-gap photoresponse is determined by the epitaxial growth temperature of the Si:Er layer and is not related to the composition of erbium emission centers. It is found that the absorption of light with photon energies lower than the energy-gap of silicon is determined by impurity-defect complexes that appear during the growth of the epitaxial layer and form a quasi-continuous spectrum of states in the energy gap of silicon. It is assumed that these impurity centers are not related to optically active erbium centers and are not involved in excitation-energy transfer to the rare-earth impurity.

  10. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.