Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

NASA Astrophysics Data System (ADS)

Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

2017-03-01

The potential of single-walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs.

Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

PubMed

Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

2014-12-10

Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

PubMed Central

2014-01-01

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

DOE PAGES

Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; ...

2016-04-04

Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m -1 K -2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, wemore » demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee

Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m -1 K -2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, wemore » demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailoredmore » diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.« less

Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

2015-03-01

Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

Modeling of Current-Voltage Characteristics in Large Metal-Semiconducting Carbon Nanotube Systems

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Biegel, Bryon A. (Technical Monitor)

2000-01-01

A model is proposed for two observed current-voltage (I-V) patterns in recent experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 (1997)]. We claim that there are two contact modes for a tip (metal)-nanotube (semiconductor) junction depending whether the alignment of the metal and the semiconductor band structures is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this model to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor with metallic electrodes at low temperature [Zhou et al., Appl. Phys. Lett. 76, 1597 (2000)], and show that two independent metal-semiconductor junctions in series are responsible for the observed behavior.

Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Y. G.; Wang, T. H.; Lin, X. W.; Dravid, V. P.

2006-12-01

We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction.

Electronic structure and optical spectra of semiconducting carbon nanotubes functionalized by diazonium salts

NASA Astrophysics Data System (ADS)

Ramirez, Jessica; Mayo, Michael L.; Kilina, Svetlana; Tretiak, Sergei

2013-02-01

We report density functional (DFT) calculations on finite-length semiconducting carbon nanotubes covalently and non-covalently functionalized by aryl diazonium moieties and their chlorinated derivatives. For these systems, we investigate (i) an accuracy of different functionals and basis sets, (ii) a solvent effect, and (iii) the impact of the chemical functionalization on optical properties of nanotubes. In contrast to B3LYP, only long-range-corrected functionals, such as CAM-B3LYP and wB97XD, properly describe the ground and excited state properties of physisorbed molecules. We found that physisorbed cation insignificantly perturbs the optical spectra of nanotubes. In contrast, covalently bound complexes demonstrate strong redshifts and brightening of the lowest exciton that is optically dark in pristine nanotubes. However, the energy and oscillator strength of the lowest state are dictated by the position of the molecule on the nanotube. Thus, if controllable and selective chemical functionalization is realized, the PL of nanotubes could be improved.

Direct observation of hole transfer from semiconducting polymer to carbon nanotubes.

PubMed

Lan, Fei; Li, Guangyong

2013-05-08

Carbon nanotubes have been proven to play significant roles in polymer-based solar cells. However, there is intensive debate on whether carbon nanotube behaves as a donor or acceptor in the semiconducting polymer:carbon nanotube composite. In this paper, we report a direct observation via Kelvin probe force microscopy (KPFM) that single walled carbon nanotubes (SWNTs) behave as hole transporting channels in poly(3-hexylthiophene-2,5-diyl) (P3HT)/SWNT heterojunctions. By comparing the surface potential (SP) change of SWNT in dark and under illumination, we observed that electrons are blocked from SWNT while holes are transferred to SWNT. This observation can be well-explained by our proposed band alignment model of P3HT/SWNT heterojunction. The finding is further verified by hole mobility measurement using the space charge limited current (SCLC) method. SCLC results indicate that the existence of small amount of SWNT (wt 0.5%) promotes device hole mobility to around 15-fold, indicating SWNT act as hole transfer channel. Our finding of hole transporting behavior of SWNT in P3HT/SWNT blend will provide a useful guidance for enhancing the performance of polymer solar cells by carbon nanotubes.

Ballistic and resonant negative photocurrents in semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Karnetzky, Christoph; Sponfeldner, Lukas; Engl, Max; Holleitner, Alexander W.

2017-04-01

Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent amplitude. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands.

Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blackburn, Jeffrey L.

Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into themore » thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.« less

Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

DOE PAGES

Blackburn, Jeffrey L.

2017-06-14

Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into themore » thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.« less

Structure of junctions of multiwalled carbon nanotubes with tetragonal cross section and flattened nanotubes revealed by electron-beam tomography

NASA Astrophysics Data System (ADS)

Nagano, Yuta; Kohno, Hideo

2017-11-01

Multiwalled carbon nanotubes with tetragonal cross section frequently form junctions with flattened multi-walled carbon nanotubes, a kind of carbon nanoribbon. The three-dimensional structure of the junctions is revealed by transmission-electron-microscopy-based tomography. Two types of junction, parallel and diagonal, are found. The formation mechanism of these two types of junction is discussed in terms of the origami mechanism that was previously proposed to explain the formation of carbon nanoribbons and nanotetrahedra.

Ion Separation using a Y-Junction Carbon Nanotube

NASA Astrophysics Data System (ADS)

Park, Jae Hyun; Sinnott, Susan; Aluru, Narayana

2005-11-01

Using molecular dynamics simulations, we show that a Y-junction carbon nanotube can be used to separate potassium and chloride ions from a KCl solution. The system consists of a KCl solution chamber connected to an (8,8) carbon nanotube, which acts as the stem. Two carbon nanotube branches of sizes (5,5) and (6,6) are connected to the (8,8) nanotube forming the Y-junction. Uncharged (5,5) and (6,6) carbon nanotubes show close to zero occupancy for transport of potassium and chloride ions. By functionalizing a (5,5) carbon nanotube with a negative charge, we show that we can selectively transport potassium ions. Similarly, by functionalizing a (6,6) carbon nanotube with a positive charge, we can selectively transport chloride ions. By performing molecular dynamics simulations on the entire system comprising the two branches, stem and the KCl solution chamber, we show that perfect ion separation is observed when (5,5) and (6,6) nanotubes are charged with σw,(5,5)=-0.181 C/m^2 and σw,(6,6)=+0.143 C/m^2, respectively, whereas for the system with σw,(5,5)=-0.168 C/m^2 and σw,(6,6)=+0.131 C/m^2 the separation is not perfect because of the formation of ion pairs. We discuss the formation and control of ion pairing, which is a common phenomenon in confined nanochannels.

Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Comfort, Everett; Lee, Ji Ung

2016-06-01

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

Selective nuclear localization of siRNA by metallic versus semiconducting single wall carbon nanotubes in keratinocytes

PubMed Central

Huzil, John Torin; Saliaj, Evi; Ivanova, Marina V; Gharagozloo, Marjan; Loureiro, Maria Jimena; Lamprecht, Constanze; Korinek, Andreas; Chen, Ding Wen; Foldvari, Marianna

2015-01-01

Background: The potential use of carbon nanotubes (CNTs) in gene therapy as delivery systems for nucleic acids has been recently recognized. Here, we describe that metallic versus semiconducting single-wall CNTs can produce significant differences in transfection rate and cellular distribution of siRNA in murine PAM212 keratinocytes. Results/Methodology: The results of cell interaction studies, coupled with supportive computational simulations and ultrastructural studies revealed that the use of metallic single wall CNTs resulted in siRNA delivery into both the cytoplasm and nucleus of keratinocytes, whereas semiconducting CNTs resulted in delivery only to the cytoplasm. Conclusion: Using enriched fractions of metallic or semiconducting CNTs for siRNA complex preparation may provide specific subcellular targeting advantages. PMID:28031892

Metallic → Semiconducting transitions in HX(X=F, Br, Cl) adsorbed (5,5) and (7,7) carbon nanotubes: DFT study

NASA Astrophysics Data System (ADS)

Srivastava, Reena; Shrivastava, Sadhana; Srivastava, Anurag

2018-05-01

The edge sensitivity of two different chirality (5,5) and (7,7) armchair carbon nanotubes towards toxic hydrogen halides (HF, HBr and HCl) has been analyzed by using density functional theory based ab-initio approach. The edge sensitivity has been discussed in terms of the variations in the electronic band structure of (5,5) and (7,7) carbon nanotube. The observation shows metallic to semiconducting phase transition in HF and HBr adsorbed (5,5) CNT, whereas for HCl adsorbed, it is more metallic. Whereas HBr and HCl adsorbed (7,7) CNT confirms metallic→semiconducting transition and shows diameter dependence of properties of CNTs.

Purification of semiconducting single-walled carbon nanotubes by spiral counter-current chromatography.

PubMed

Knight, Martha; Lazo-Portugal, Rodrigo; Ahn, Saeyoung Nate; Stefansson, Steingrimur

2017-02-03

Over the last decade man-made carbon nanostructures have shown great promise in electronic applications, but they are produced as very heterogeneous mixtures with different properties so the achievement of a significant commercial application has been elusive. The dimensions of single-wall carbon nanotubes are generally a nanometer wide, up to hundreds of microns long and the carbon nanotubes have anisotropic structures. They are processed to have shorter lengths but they need to be sorted by diameter and chirality. Thus counter-current chromatography methods developed for large molecules are applied to separate these compounds. A modified mixer-settler spiral CCC rotor made with 3 D printed disks was used with a polyethylene glycol-dextran 2-phase solvent system and a surfactant gradient to purify the major species in a commercial preparation. We isolated the semi-conducting single walled carbon nanotube chiral species identified by UV spectral analysis. The further development of spiral counter-current chromatography instrumentation and methods will enable the scalable purification of carbon nanotubes useful for the next generation electronics. Copyright © 2016 Elsevier B.V. All rights reserved.

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

NASA Technical Reports Server (NTRS)

Wincheski, Buzz; Namkung, Min; Smits, Jan; Williams, Phillip; Harvey, Robert

2003-01-01

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Enrichment Mechanism of Semiconducting Single-walled Carbon Nanotubes by Surfactant Amines

PubMed Central

Ju, Sang-Yong; Utz, Marcel; Papadimitrakopoulos, Fotios

2009-01-01

Utilization of single-walled carbon nanotubes (SWNTs) in high-end applications hinges on separating metallic (met-) from semiconducting (sem-) SWNTs. Surfactant amines, like octadecylamine (ODA) have proven instrumental for the selective extraction of sem-SWNTs from tetrahydrofuran (THF) nanotube suspensions. The chemical shift differences along the tail of an asymmetric, diacetylenic surfactant amine were used to probe the molecular dynamics in the presence and absence of nanotubes via NMR. The results suggest that the surfactant amine head is firmly immobilized onto the nanotube surface together with acidic water, while the aliphatic tail progressively gains larger mobility as it gets farther from the SWNT. X-ray and high-resolution TEM studies indicate that the sem-enriched sample is populated mainly by small nanotube bundles containing ca. three SWNTs. Molecular simulations in conjunction with previously determined HNO3/H2SO4 oxidation depths for met- and sem-SWNTs indicate that the strong pinning of the amine surfactants on the sem-enriched SWNTs bundles is a result of a well-ordered arrangement of nitrate/amine salts separated with a monomolecular layer of H2O. Such continuous 2D arrangement of nitrate/amine salts shields the local environment adjacent to sem-enriched SWNTs bundles and maintains an acidic pH that preserves nanotube oxidation (i.e. SWNTn+). This, in turn, results in strong interactions with charge-balancing NO3- counter ions that through their association with neutralized surfactant amines provide effective THF dispersion and consequent sem-enrichment. PMID:19397291

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2013-11-25

a ballistic one-dimensional conductor is / = £>(£) ■ VgiE)[fR(E) - fdEME , (1) where Vg(E) is the group velocity, D(E) is the density of states... AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors...SCIENCES LABORATORIES The Aerospace Corporation functions as an "architect-engineer" for national security programs, specializing in advanced military

Transport Modeling for Metallic Electrode: Semiconducting Nanotube Systems

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

2001-01-01

Recently, current-voltage (I-V) characteristics have been reported by Collins et al. for a system with a scanning tunneling microscope (STM) tip and a carbon nanotube. The STM tip was driven forward into a film of many entangled nanotubes on a substrate, and then was retracted, so that one of nanotubes bridged the STM and the film. I-V characteristics had two different patterns for different heights. One showed large dI/ dV with V greater than 0, small dI/dV with V less than 0, and I = 0 near V = 0 (type-I), while the other showed rectification, i.e., I does not equal 0 only with V less than 0 (type-II), with the tip grounded. We propose a physical mechanism to explain the observed I-V patterns. We consider that the observed characteristics strongly reflected the nature of the tip (metal) - nanotube (semiconductor) contact. The other end of the nanotube was entangled well in the film, and simply provided a good Ohmic contact. We will argue that there are two different contact modes: vacuum gap and touching modes, depending on the presence or absence of a tiny vacuum gap d approx. 0.1 - 0.2 nm at the junction. These modes may be related to physisorption and chemisorption, respectively. Once admitting their existence, it is naturally shown that I-V characteristics are type-I in the vacuum gap mode, and type-II in the touching mode. We argue that the nanotube had to be an n-type semiconductor judging from the I-V characteristics, contrary to often observed p-type in the transistor applications, where p-type is probably due to the oxidation in air or the trapped charges in the silicon dioxide. Additional information is contained in the original extended abstract.

Electronic Transport Properties of Carbon-Nanotube Networks: The Effect of Nitrate Doping on Intratube and Intertube Conductances

NASA Astrophysics Data System (ADS)

Ketolainen, T.; Havu, V.; Jónsson, E. Ö.; Puska, M. J.

2018-03-01

The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p -type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.

Charge transport in vertically aligned, self-assembled peptide nanotube junctions.

PubMed

Mizrahi, Mordechay; Zakrassov, Alexander; Lerner-Yardeni, Jenny; Ashkenasy, Nurit

2012-01-21

The self-assembly propensity of peptides has been extensively utilized in recent years for the formation of supramolecular nanostructures. In particular, the self-assembly of peptides into fibrils and nanotubes makes them promising building blocks for electronic and electro-optic applications. However, the mechanisms of charge transfer in these wire-like structures, especially in ambient conditions, are not yet fully understood. We describe here a layer-by-layer deposition methodology of short self-assembled cyclic peptide nanotubes, which results in vertically oriented nanotubes on gold substrates. Using this novel deposition methodology, we have fabricated molecular junctions with a conductive atomic force microscopy tip as a second electrode. Studies of the junctions' current-voltage characteristics as a function of the nanotube length revealed an efficient charge transfer in these supramolecular structures, with a low current attenuation constant of 0.1 Å(-1), which indicate that electron transfer is dominated by hopping. Moreover, the threshold voltage to field-emission dominated transport was found to increase with peptide length in a manner that depends on the nature of the contact with the electrodes. The flexibility in the design of the peptide monomers and the ability to control their sequential order over the nanotube by means of the layer-by-layer assembly process, which is demonstrated in this work, can be used to engineer the electronic properties of self-assembled peptide nanotubes toward device applications.

Voltage-Controlled Spray Deposition of Multiwalled Carbon Nanotubes on Semiconducting and Insulating Substrates

NASA Astrophysics Data System (ADS)

Maulik, Subhodip; Sarkar, Anirban; Basu, Srismrita; Daniels-Race, Theda

2018-05-01

A facile, cost-effective, voltage-controlled, "single-step" method for spray deposition of surfactant-assisted dispersed carbon nanotube (CNT) thin films on semiconducting and insulating substrates has been developed. The fabrication strategy enables direct deposition and adhesion of CNT films on target samples, eliminating the need for substrate surface functionalization with organosilane binder agents or metal layer coatings. Spray coating experiments on four types of sample [bare silicon (Si), microscopy-grade glass samples, silicon dioxide (SiO2), and polymethyl methacrylate (PMMA)] under optimized control parameters produced films with thickness ranging from 40 nm to 6 μm with substantial surface coverage and packing density. These unique deposition results on both semiconducting and insulator target samples suggest potential applications of this technique in CNT thin-film transistors with different gate dielectrics, bendable electronics, and novel CNT-based sensing devices, and bodes well for further investigation into thin-film coatings of various inorganic, organic, and hybrid nanomaterials on different types of substrate.

Majorana quasiparticles in semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Marganska, Magdalena; Milz, Lars; Izumida, Wataru; Strunk, Christoph; Grifoni, Milena

2018-02-01

Engineering effective p -wave superconductors hosting Majorana quasiparticles (MQPs) is nowadays of particular interest, also in view of the possible utilization of MQPs in fault-tolerant topological quantum computation. In quasi-one-dimensional systems, the parameter space for topological superconductivity is significantly reduced by the coupling between transverse modes. Together with the requirement of achieving the topological phase under experimentally feasible conditions, this strongly restricts in practice the choice of systems which can host MQPs. Here, we demonstrate that semiconducting carbon nanotubes (CNTs) in proximity with ultrathin s -wave superconductors, e.g., exfoliated NbSe2, satisfy these needs. By precise numerical tight-binding calculations in the real space, we show the emergence of localized zero-energy states at the CNT ends above a critical value of the applied magnetic field, of which we show the spatial evolution. Knowing the microscopic wave functions, we unequivocally demonstrate the Majorana nature of the localized states. An effective four-band model in the k -space, with parameters determined from the numerical spectrum, is used to calculate the topological phase diagram and its phase boundaries in analytic form. Finally, the impact of symmetry breaking contributions, like disorder and an axial component of the magnetic field, is investigated.

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

DTIC Science & Technology

2018-01-08

absorbers. Semiconducting nanotubes are strong, dye-like absorbers with bandgaps tunable to the ideal for single-junction solar PV ~1.3 eV or deeper...semiconducting carbon nanotube-based photovoltaic solar cells and photodetectors; (2) high-performance carbon nanotube electronics; (3) stretchable...photovoltaic solar cells and photodetectors Semiconducting carbon nanotubes are attractive absorbers for photovoltaic and photodetector devices. The

Multimodal probing of oxygen and water interaction with metallic and semiconducting carbon nanotube networks under ultraviolet irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nelson, Anthony J.; Ivanov, Ilia N.; Muckley, Eric S.

In this study, carbon nanotube (CNT) networks composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O 2 and H 2O vapor in the dark and under UV irradiation. Changes in film resistance and mass were measured in situ. In the dark, resistance of metallic nanotube networks increases in the presence of O 2 and H 2O, whereas resistance of s-SWNT networks decreases. We find that UV irradiation increases the sensitivity of CNT networks to O 2 and H 2O by more than an order of magnitude. Under UV irradiation,more » the resistance of metallic nanotube networks decreases in the presence of O 2 and H 2O likely through the generation of free charge carriers. UV irradiation increases the gas/vapor sensitivity of s-SWNT networks by nearly a factor of 2 compared to metallic nanotube networks. Networks of s-SWNTs show evidence of delamination from the gold-plated QCM crystal, possibly due to preferential adsorption of O 2 and H 2O on gold.« less

Multimodal probing of oxygen and water interaction with metallic and semiconducting carbon nanotube networks under ultraviolet irradiation

DOE PAGES

Nelson, Anthony J.; Ivanov, Ilia N.; Muckley, Eric S.; ...

2016-06-01

In this study, carbon nanotube (CNT) networks composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O 2 and H 2O vapor in the dark and under UV irradiation. Changes in film resistance and mass were measured in situ. In the dark, resistance of metallic nanotube networks increases in the presence of O 2 and H 2O, whereas resistance of s-SWNT networks decreases. We find that UV irradiation increases the sensitivity of CNT networks to O 2 and H 2O by more than an order of magnitude. Under UV irradiation,more » the resistance of metallic nanotube networks decreases in the presence of O 2 and H 2O likely through the generation of free charge carriers. UV irradiation increases the gas/vapor sensitivity of s-SWNT networks by nearly a factor of 2 compared to metallic nanotube networks. Networks of s-SWNTs show evidence of delamination from the gold-plated QCM crystal, possibly due to preferential adsorption of O 2 and H 2O on gold.« less

Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

PubMed

Cao, Yu; Brady, Gerald J; Gui, Hui; Rutherglen, Chris; Arnold, Michael S; Zhou, Chongwu

2016-07-26

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

NASA Astrophysics Data System (ADS)

Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

2016-02-01

Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/-2 V) and subthreshold swing (SS) (122-161 mV dec-1), high effective mobility (up to 17.6-37.7 cm2 V-1 s-1) and high on/off ratio (104-107). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge

Numerical simulation of electron scattering by nanotube junctions

NASA Astrophysics Data System (ADS)

Brüning, J.; Grikurov, V. E.

2008-03-01

We demonstrate the possibility of computing the intensity of electronic transport through various junctions of three-dimensional metallic nanotubes. In particular, we observe that the magnetic field can be used to control the switch of electron in Y-type junctions. Keeping in mind the asymptotic modeling of reliable nanostructures by quantum graphs, we conjecture that the scattering matrix of the graph should be the same as the scattering matrix of its nanosize-prototype. The numerical computation of the latter gives a method for determining the "gluing" conditions at a graph. Exploring this conjecture, we show that the Kirchhoff conditions (which are commonly used on graphs) cannot be applied to model reliable junctions. This work is a natural extension of the paper [1], but it is written in a self-consistent manner.

Direct Proof of a Defect-Modulated Gap Transition in Semiconducting Nanotubes.

PubMed

Senga, Ryosuke; Pichler, Thomas; Yomogida, Yohei; Tanaka, Takeshi; Kataura, Hiromichi; Suenaga, Kazu

2018-06-13

Measurements of optical properties at a nanometer level are of central importance for the characterization of optoelectronic devices. It is, however, difficult to use conventional light-probe measurements to determine the local optical properties from a single quantum object with nanometrical inhomogeneity. Here, we successfully measured the optical gap transitions of an individual semiconducting carbon nanotube with defects by using a monochromated electron source as a probe. The optical conductivity extracted from an electron energy-loss spectrum for a certain type of defect presents a characteristic modification near the lowest excitation peak ( E 11 ), where excitons and nonradiative transitions, as well as phonon-coupled excitations, are strongly involved. Detailed line-shape analysis of the E 11 peak clearly shows different degrees of exciton lifetime shortening and electronic state modification according to the defect type.

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne

PubMed Central

Zheng, Zhe; Fang, Hehai; Liu, Dan; Tan, Zhenjun; Gao, Xin; Hu, Weida; Peng, Hailin; Tong, Lianming

2017-01-01

Abstract Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s‐SWNTs seriously impedes the development of s‐SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s‐SWNTs and γ‐graphdiyne. The heterojunctions between the two materials can efficiently separate the photogenerated excitons. In comparison to device fabricated only with s‐SWNTs, this IR detector shows a uniform response in the whole channel of the device. The response time is demonstrated to be below 1 ms. The optimal responsivity and detectivity approximately reach 0.4 mA W−1 and 5 × 106 cmHz1/2 W−1, respectively. PMID:29270354

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

PubMed

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Controlled defects in semiconducting carbon nanotubes promote efficient generation and luminescence of trions.

PubMed

Brozena, Alexandra H; Leeds, Jarrett D; Zhang, Yin; Fourkas, John T; Wang, YuHuang

2014-05-27

We demonstrate efficient creation of defect-bound trions through chemical doping of controlled sp(3) defect sites in semiconducting, single-walled carbon nanotubes. These tricarrier quasi-particles luminesce almost as brightly as their parent excitons, indicating a remarkably efficient conversion of excitons into trions. Substantial populations of trions can be generated at low excitation intensities, even months after a sample has been prepared. Photoluminescence spectroscopy reveals a trion binding energy as high as 262 meV, which is substantially larger than any previously reported values. This discovery may have important ramifications not only for studying the basic physics of trions but also for the application of these species in fields such as photonics, electronics, and bioimaging.

Electronic transport across a junction between armchair graphene nanotube and zigzag nanoribbon. Transmission in an armchair nanotube without a zigzag half-line of dimers

NASA Astrophysics Data System (ADS)

Sharma, Basant Lal

2018-05-01

Based on the well known nearest-neighbor tight-binding approximation for graphene, an exact expression for the electronic conductance across a zigzag nanoribbon/armchair nanotube junction is presented for non-interacting electrons. The junction results from the removal of a half-row of zigzag dimers in armchair nanotube, or equivalently by partial rolling of zigzag nanoribbon and insertion of a half-row of zigzag dimers in between. From the former point of view, a discrete form of Dirichlet condition is imposed on a zigzag half-line of dimers assuming the vanishing of wave function outside the physical structure. A closed form expression is provided for the reflection and transmission moduli for the outgoing wave modes for each given electronic wave mode incident from either side of the junction. It is demonstrated that such a contact junction between the nanotube and nanoribbon exhibits negligible backscattering, and the transmission has been found to be nearly ballistic. In contrast to the previously reported studies for partially unzipped carbon nanotubes (CNTs), using the same tight binding model, it is found that due to the "defect" there is certain amount of mixing between the electronic wave modes with even and odd reflection symmetries. But the junction remains a perfect valley filter for CNTs at certain energy ranges. Applications aside from the electronic case, include wave propagation in quasi-one-dimensional honeycomb structures of graphene-like constitution. The paper includes several numerical calculations, analytical derivations, and graphical results, which complement the provision of succinct closed form expressions.

Selective growth of chirality-enriched semiconducting carbon nanotubes by using bimetallic catalysts from salt precursors.

PubMed

Zhao, Xiulan; Yang, Feng; Chen, Junhan; Ding, Li; Liu, Xiyan; Yao, Fengrui; Li, Meihui; Zhang, Daqi; Zhang, Zeyao; Liu, Xu; Yang, Juan; Liu, Kaihui; Li, Yan

2018-04-19

Bimetallic catalysts play important roles in the selective growth of single-walled carbon nanotubes (SWNTs). Using the simple salts (NH4)6W7O24·6H2O and Co(CH3COO)2·4H2O as precursors, tungsten-cobalt catalysts were prepared. The catalysts were composed of W6Co7 intermetallic compounds and tungsten-dispersed cobalt. With the increase of the W/Co ratio in the precursors, the content of W6Co7 was increased. Because the W6Co7 intermetallic compound can enable the chirality specified growth of SWNTs, the selectivity of the resulting SWNTs is improved at a higher W/Co ratio. At a W/Co ratio of 6 : 4 and under optimized chemical vapor deposition conditions, we realized the direct growth of semiconducting SWNTs with the purity of ∼96%, in which ∼62% are (14, 4) tubes. Using salts as precursors to prepare tungsten-cobalt bimetallic catalysts is flexible and convenient. This offers an efficient pathway for the large-scale preparation of chirality enriched semiconducting SWNTs.

Strain Sensitivity in Single Walled Carbon Nanotubes for Multifunctional Materials

NASA Technical Reports Server (NTRS)

Heath, D. M. (Technical Monitor); Smits, Jan M., VI

2005-01-01

Single walled carbon nanotubes represent the future of structural aerospace vehicle systems due to their unparalleled strength characteristics and demonstrated multifunctionality. This multifunctionality rises from the CNT's unique capabilities for both metallic and semiconducting electron transport, electron spin polarizability, and band gap modulation under strain. By incorporating the use of electric field alignment and various lithography techniques, a single wall carbon nanotube (SWNT) test bed for measurement of conductivity/strain relationships has been developed. Nanotubes are deposited at specified locations through dielectrophoresis. The circuit is designed such that the central, current carrying section of the nanotube is exposed to enable atomic force microscopy and manipulation in situ while the transport properties of the junction are monitored. By applying this methodology to sensor development a flexible single wall carbon nanotube (SWNT) based strain sensitive device has been developed. Studies of tensile testing of the flexible SWNT device vs conductivity are also presented, demonstrating the feasibility of using single walled HiPCO (high-pressure carbon monoxide) carbon nanotubes as strain sensing agents in a multi-functional materials system.

Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

PubMed

Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

2016-03-01

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

In situ synthesis of semiconducting single-walled carbon nanotubes by modified arc discharging method

NASA Astrophysics Data System (ADS)

Zhao, Tingkai; Ji, Xianglin; Jin, Wenbo; Yang, Wenbo; Zhao, Xing; Dang, Alei; Li, Hao; Li, Tiehu

2017-02-01

Semiconducting single-walled carbon nanotubes (s-SWCNTs) were in situ synthesized by a temperature-controlled arc discharging furnace with DC electric field using Co-Ni alloy powder as catalyst in helium gas. The microstructures of s-SWCNTs were characterized using high-resolution transmission electron microscopy, electron diffraction, and Raman spectrometry apparatus. The experimental results indicated that the best voltage value in DC electric field is 54 V, and the environmental temperature of the reaction chamber is 600 °C. The mean diameter of s-SWCNTs was estimated about 1.3 nm. The chiral vector ( n, m) of s-SWCNTs was calculated to be (10, 10) type according to the electron diffraction patterns.

Carbon Nanotube Based Molecular Electronics and Motors: A View from Classical and Quantum Dynamics Simulations

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash (Technical Monitor)

1998-01-01

The tubular forms of fullerenes popularly known as carbon nanotubes are experimentally produced as single-, multiwall, and rope configurations. The nanotubes and nanoropes have shown to exhibit unusual mechanical and electronic properties. The single wall nanotubes exhibit both semiconducting and metallic behavior. In short undefected lengths they are the known strongest fibers which are unbreakable even when bent in half. Grown in ropes their tensile strength is approximately 100 times greater than steel at only one sixth the weight. Employing large scale classical and quantum molecular dynamics simulations we will explore the use of carbon nanotubes and carbon nanotube junctions in 2-, 3-, and 4-point molecular electronic device components, dynamic strength characterization for compressive, bending and torsional strains, and chemical functionalization for possible use in a nanoscale molecular motor. The above is an unclassified material produced for non-competitive basic research in the nanotechnology area.

Enhancing and optimizing electronic transport in biphenyl derivative single-molecule junctions attached to carbon nanotubes electrodes

NASA Astrophysics Data System (ADS)

Reis-Silva, J. C.; Ferreira, D. F. S.; Leal, J. F. P.; Pinheiro, F. A.; Del Nero, J.

2017-02-01

We investigate, by means of ab initio calculations based on non-equilibrium Green's function method coupled to density function theory, electronic transport in molecular junctions composed of biphenyl (BP) and biphenyl within (-2H+) defect (BP2D) molecules attached to metallic (9,0) carbon nanotubes. We demonstrate that the BP2D junction exhibits unprecedented electronic transport properties, and that its conductance can be up to three orders of magnitude higher than biphenyl single-molecule junctions. These findings are explained in terms of the non-planar molecular conformation of BP2D, and of the stronger electronic coupling between the BP2D molecule and the organic electrodes, which confers high stability to the junction. Our results suggest that BP2D attached to carbon nanotubes can be explored as an efficient and highly stable platform in single-molecule electronics with extraordinary transport properties.

Role of inter-tube coupling and quantum interference on electrical transport in carbon nanotube junctions

NASA Astrophysics Data System (ADS)

Tripathy, Srijeet; Bhattacharyya, Tarun Kanti

2016-09-01

Due to excellent transport properties, Carbon nanotubes (CNTs) show a lot of promise in sensor and interconnect technology. However, recent studies indicate that the conductance in CNT/CNT junctions are strongly affected by the morphology and orientation between the tubes. For proper utilization of such junctions in the development of CNT based technology, it is essential to study the electronic properties of such junctions. This work presents a theoretical study of the electrical transport properties of metallic Carbon nanotube homo-junctions. The study focuses on discerning the role of inter-tube interactions, quantum interference and scattering on the transport properties on junctions between identical tubes. The electronic structure and transport calculations are conducted with an Extended Hückel Theory-Non Equilibrium Green's Function based model. The calculations indicate conductance to be varying with a changing crossing angle, with maximum conductance corresponding to lattice registry, i.e. parallel configuration between the two tubes. Further calculations for such parallel configurations indicate onset of short and long range oscillations in conductance with respect to changing overlap length. These oscillations are attributed to inter-tube coupling effects owing to changing π orbital overlap, carrier scattering and quantum interference of the incident, transmitted and reflected waves at the inter-tube junction.

Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.

PubMed

Islam, Ahmad E; Rogers, John A; Alam, Muhammad A

2015-12-22

High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Decomposition of the Thermal Boundary Resistance across Carbon Nanotube-Graphene Junctions to Different Mechanisms.

PubMed

Shi, Jingjing; Zhong, Yang; Fisher, Timothy S; Ruan, Xiulin

2018-05-02

Three different mechanisms are identified to contribute to thermal resistances across a carbon nanotube-graphene junction: material mismatch, nonplanar junction, and defects. To isolate the contributions of each mechanism, we have designed five types of junctions and performed nonequilibrium molecular dynamics simulations. The results show that the contributions from the three mechanisms are similar, each at around 2.5 × 10 -11 m 2 K/W. The relations between thermal boundary resistance and both defect number and turning angle at the interface are also studied.

Carbon Nanotubes for Space Photovoltaic Applications

NASA Technical Reports Server (NTRS)

Efstathiadis, Harry; Haldar, Pradeep; Landi, Brian J.; Denno, Patrick L.; DiLeo, Roberta A.; VanDerveer, William; Raffaelle, Ryne P.

2007-01-01

Carbon nanotubes (CNTs) can be envisioned as an individual graphene sheet rolled into a seamless cylinder (single-walled, SWNT), or concentric sheets as in the case of a multi-walled carbon nanotube (MWNT) (1). The role-up vector will determine the hexagonal arrangement and "chirality" of the graphene sheet, which will establish the nanotube to be metallic or semiconducting. The optoelectronic properties will depend directly on this chiral angle and the diameter of the SWNT, with semiconductor types exhibiting a band gap energy (2). Characteristic of MWNTs are the concentric graphene layers spaced 0.34 nm apart, with diameters from 10-200 nm and lengths up to hundreds of microns (2). In the case of SWNTs, the diameters range from 0.4 - 2 nm and lengths have been reported up to 1.5 cm (3). SWNTs have the distinguishable property of "bundling" together due to van der Waal's attractions to form "ropes." A comparison of these different structural types is shown in Figure 1. The use of SWNTS in space photovoltaic (PV) applications is attractive for a variety of reasons. Carbon nanotubes as a class of materials exhibit unprecedented optical, electrical, mechanical properties, with the added benefit of being nanoscale in size which fosters ideal interaction in nanomaterial-based devices like polymeric solar cells. The optical bandgap of semiconducting SWNTs can be varied from approx. 0.4 - 1.5 eV, with this property being inversely proportional to the nanotube diameter. Recent work at GE Global Research has shown where a single nanotube device can behave as an "ideal" pn diode (5). The SWNT was bridged over a SiO2 channel between Mo contacts and exhibited an ideality factor of 1, based on a fit of the current-voltage data using the diode equation. The measured PV efficiency under a 0.8 eV monochromatic illumination showed a power conversion efficiency of 0.2 %. However, the projected efficiency of these junctions is estimated to be > 5 %, especially when one considers the

Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.

PubMed

Umari, P; Petrenko, O; Taioli, S; De Souza, M M

2012-05-14

Electronic band gaps for optically allowed transitions are calculated for a series of semiconducting single-walled zig-zag carbon nanotubes of increasing diameter within the many-body perturbation theory GW method. The dependence of the evaluated gaps with respect to tube diameters is then compared with those found from previous experimental data for optical gaps combined with theoretical estimations of exciton binding energies. We find that our GW gaps confirm the behavior inferred from experiment. The relationship between the electronic gap and the diameter extrapolated from the GW values is also in excellent agreement with a direct measurement recently performed through scanning tunneling spectroscopy.

Carbon nanotube conditioning: ab initio simulations of the effect of defects and doping on the electronic properties of carbon nanotube systems.

NASA Astrophysics Data System (ADS)

Soto, Matias; Barrera, Enrique

Using carbon nanotubes for electrical conduction applications at the macroscale has proven to be a difficult task, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route and the topic of this work is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present, so that the electrical conduction of a bundle or even wire may be enhanced. We used density functional theory calculations to study the effect of defects and doping on the electronic structure of metallic, semi-metal and semiconducting carbon nanotubes in order to gain a clear picture of their properties. Additionally, using dopants to increase the conductance across a junction between two carbon nanotubes was studied for different configurations. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics. Partial funding was received from CONACyT Scholarship 314419.

Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

NASA Astrophysics Data System (ADS)

Katzenmeyer, Aaron Michael

As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

Photochemical Creation of Fluorescent Quantum Defects in Semiconducting Carbon Nanotube Hosts.

PubMed

Wu, Xiaojian; Kim, Mijin; Kwon, Hyejin; Wang, YuHuang

2018-01-15

Quantum defects are an emerging class of synthetic single-photon emitters that hold vast potential for near-infrared imaging, chemical sensing, materials engineering, and quantum information processing. Herein, we show that it is possible to optically direct the synthetic creation of molecularly tunable fluorescent quantum defects in semiconducting single-walled carbon nanotube hosts through photochemical reactions. By exciting the host semiconductor with light that resonates with its electronic transition, we find that halide-containing aryl groups can covalently bond to the sp 2 carbon lattice. The introduced quantum defects generate bright photoluminescence that allows tracking of the reaction progress in situ. We show that the reaction is independent of temperature but correlates strongly with the photon energy used to drive the reaction, suggesting a photochemical mechanism rather than photothermal effects. This type of photochemical reactions opens the possibility to control the synthesis of fluorescent quantum defects using light and may enable lithographic patterning of quantum emitters with electronic and molecular precision. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon nanotube macroelectronics

NASA Astrophysics Data System (ADS)

Zhang, Jialu

In this dissertation, I discuss the application of carbon nanotubes in macroelectronis. Due to the extraordinary electrical properties such as high intrinsic carrier mobility and current-carrying capacity, single wall carbon nanotubes are very desirable for thin-film transistor (TFT) applications such as flat panel display, transparent electronics, as well as flexible and stretchable electronics. Compared with other popular channel material for TFTs, namely amorphous silicon, polycrystalline silicon and organic materials, nanotube thin-films have the advantages of low-temperature processing compatibility, transparency, and flexibility, as well as high device performance. In order to demonstrate scalable, practical carbon nanotube macroelectroncis, I have developed a platform to fabricate high-density, uniform separated nanotube based thin-film transistors. In addition, many other essential analysis as well as technology components, such as nanotube film density control, purity and diameter dependent semiconducting nanotube electrical performance study, air-stable n-type transistor fabrication, and CMOS integration platform have also been demonstrated. On the basis of the above achievement, I have further demonstrated various kinds of applications including AMOLED display electronics, PMOS and CMOS logic circuits, flexible and transparent electronics. The dissertation is structured as follows. First, chapter 1 gives a brief introduction to the electronic properties of carbon nanotubes, which serves as the background knowledge for the following chapters. In chapter 2, I will present our approach of fabricating wafer-scale uniform semiconducting carbon nanotube thin-film transistors and demonstrate their application in display electronics and logic circuits. Following that, more detailed information about carbon nanotube thin-film transistor based active matrix organic light-emitting diode (AMOLED) displays is discussed in chapter 3. And in chapter 4, a technology to

Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak

2003-01-01

This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

Modeling of Carbon Nanotube Schottky Barrier Reduction for Holes in Air

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

2003-01-01

A model is proposed for the previously reported lower Schottky barrier for holes Phi(sub Bh) in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. We consider that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower Phi(sub Bh) after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.

Andreev bound states in a semiconducting nanowire Josephson junction, Part II: Quantum jumps and Fermion parity switching

NASA Astrophysics Data System (ADS)

Hays, M.; de Lange, G.; Serniak, K.; van Woerkom, D. J.; Väyrynen, J. I.; van Heck, B.; Vool, U.; Krogstrup, P.; Nygård, J.; Frunzio, L.; Geresdi, A.; Glazman, L. I.; Devoret, M. H.

Proximitized semiconducting nanowires subject to magnetic field should display topological superconductivity and support Majorana zero modes which have non-Abelian braiding statistics. The conventional Andreev levels formed in such wires in the absence of field are a precursor to these exotic zero modes. The fermion-parity switching time of Andreev levels sets a lower bound on the bandwidth required for experiments aimed at harnessing non-Abelian braiding statistics. We demonstrate the observation of quantum jumps between even and odd-parity states of an individual Andreev bound state in a non-topological junction, providing a direct measurement of the state populations and the parity lifetime. Work supported by: ARO, ONR, AFOSR, EU Marie Curie and YINQE.

Preferential destruction of metallic single-walled carbon nanotubes by laser irradiation.

PubMed

Huang, Houjin; Maruyama, Ryuichiro; Noda, Kazuhiro; Kajiura, Hisashi; Kadono, Koji

2006-04-13

Upon laser irradiation in air, metallic single-walled carbon nanotubes (SWNTs) in carbon nanotube thin film can be destroyed in preference to their semiconducting counterparts when the wavelength and power intensity of the irradiation are appropriate and the carbon nanotubes are not heavily bundled. Our method takes advantage of these two species' different rates of photolysis-assisted oxidation, creating the possibility of defining the semiconducting portions of carbon nanotube (CNT) networks using optical lithography, particularly when constructing all-CNT FETs (without metal electrodes) in the future.

Nanomanipulation and Lithography: The Building (and Modeling) of Carbon Nanotube Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Louie, Richard Nam

2002-12-01

Aircraft fuselages suffer alternating stress during takeoffs and landings, and fatigue cracks begin to grow, usually at rivet holes. The detection of these fatigue cracks under installed fasteners in aging aircraft is a major goal of the nondestructive evaluation (NDE) community. The use of giant magnetoresistance (GMR) sensors in electromagnetic (EM) NDE has been increasing rapidly. For example, here at Langley Research Center, a Rotating Probe System (RPS) containing a GMR element has been incorporated into a product to detect deeply buried flaws in aerospace structures. In order to advance this eddy current probe application and many similar ones, research to create smaller, more sensitive and energy-efficient EM sensors has been aggressively pursued. Recent theoretical and experimental work on spin coherent transport supports the feasibility of carbon nanotube (CNT) based magnetic tunnel junctions. In this study, a spatial filtering scheme is presented that improves the signal to noise ratio of the RPS and does not significantly impact the number of false alarms. Signals due to buried flaws occur at higher frequencies than do signals due to rivet tilt or probe misalignment, and the strategy purposefully targets this fact. Furthermore, the spatial filtering scheme exploits decreases in the probe output that are observed immediately preceding and following the peak in output due to a fatigue crack. Using the new filters, an enhanced probability of flaw detection is expected. In the future, even tinier, more sensitive, low-power sensors are envisioned for the rotating probe and other nondestructive inspection systems. These may be comprised of single-walled carbon nanotubes (SWCNTs) that connect two ferromagnetic (FM) electrodes. Theoretical work has been done at Langley to model the electrical and magnetoconductance behavior of such junctions, for systems containing short "armchair" nanotubes. The present work facilitates the modeling of more realistic system

Physical and Electronic Isolation of Carbon Nanotube Conductors

NASA Technical Reports Server (NTRS)

OKeeffe, James; Biegel, Bryan (Technical Monitor)

2001-01-01

Multi-walled nanotubes are proposed as a method to electrically and physically isolate nanoscale conductors from their surroundings. We use tight binding (TB) and density functional theory (DFT) to simulate the effects of an external electric field on multi-wall nanotubes. Two categories of multi-wall nanotube are investigated, those with metallic and semiconducting outer shells. In the metallic case, simulations show that the outer wall effectively screens the inner core from an applied electric field. This offers the ability to reduce crosstalk between nanotube conductors. A semiconducting outer shell is found not to perturb an electric field incident on the inner core, thereby providing physical isolation while allowing the tube to remain electrically coupled to its surroundings.

Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

DOE PAGES

MacLeod, Bradley A.; Stanton, Noah J.; Gould, Isaac E.; ...

2017-09-08

Lightweight, robust, and flexible single-walled carbon nanotube (SWCNT) materials can be processed inexpensively using solution-based techniques, similar to other organic semiconductors. In contrast to many semiconducting polymers, semiconducting SWCNTs (s-SWCNTs) represent unique one-dimensional organic semiconductors with chemical and physical properties that facilitate equivalent transport of electrons and holes. These factors have driven increasing attention to employing s-SWCNTs for electronic and energy harvesting applications, including thermoelectric (TE) generators. Here we demonstrate a combination of ink chemistry, solid-state polymer removal, and charge-transfer doping strategies that enable unprecedented n-type and p-type TE power factors, in the range of 700 μW m –1 Kmore » –2 at 298 K for the same solution-processed highly enriched thin films containing 100% s-SWCNTs. We also demonstrate that the thermal conductivity appears to decrease with decreasing s-SWCNT diameter, leading to a peak material zT ≈ 0.12 for s-SWCNTs with diameters in the range of 1.0 nm. Here, our results indicate that the TE performance of s-SWCNT-only material systems is approaching that of traditional inorganic semiconductors, paving the way for these materials to be used as the primary components for efficient, all-organic TE generators.« less

A biosensor for hydrogen peroxide detection based on electronic properties of carbon nanotubes

NASA Astrophysics Data System (ADS)

Majidi, Roya

2013-01-01

Density functional theory has been used to study the effect of hydrogen peroxide on the electronic properties of single walled carbon nanotubes. The metallic and semiconducting carbon nanotubes have been considered in the presence of different number of hydrogen peroxide. The results indicate that hydrogen peroxide has no significant effect on the metallic nanotube and these nanotubes remain to be metallic. In contrast, the electronic properties of the semiconducting nanotubes are so sensitive to hydrogen peroxide. The energy band gap of these nanotubes is decreased by increasing the number of hydrogen peroxide. The electronic sensivity of the carbon nanotubes to hydrogen peroxide opens new insights into developing biosensors based on the single walled carbon nanotubes.

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Ruifeng; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201; Cao, Hongtao

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore » 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.« less

0 - π Quantum transition in a carbon nanotube Josephson junction: Universal phase dependence and orbital degeneracy

NASA Astrophysics Data System (ADS)

Delagrange, R.; Weil, R.; Kasumov, A.; Ferrier, M.; Bouchiat, H.; Deblock, R.

2018-05-01

In a quantum dot hybrid superconducting junction, the behavior of the supercurrent is dominated by Coulomb blockade physics, which determines the magnetic state of the dot. In particular, in a single level quantum dot singly occupied, the sign of the supercurrent can be reversed, giving rise to a π-junction. This 0 - π transition, corresponding to a singlet-doublet transition, is then driven by the gate voltage or by the superconducting phase in the case of strong competition between the superconducting proximity effect and Kondo correlations. In a two-level quantum dot, such as a clean carbon nanotube, 0- π transitions exist as well but, because more cotunneling processes are allowed, are not necessarily associated to a magnetic state transition of the dot. In this proceeding, after a review of 0- π transitions in Josephson junctions, we present measurements of current-phase relation in a clean carbon nanotube quantum dot, in the single and two-level regimes. In the single level regime, close to orbital degeneracy and in a regime of strong competition between local electronic correlations and superconducting proximity effect, we find that the phase diagram of the phase-dependent transition is a universal characteristic of a discontinuous level-crossing quantum transition at zero temperature. In the case where the two levels are involved, the nanotube Josephson current exhibits a continuous 0 - π transition, independent of the superconducting phase, revealing a different physical mechanism of the transition.

Selective dispersion of high-purity semiconducting carbon nanotubes using indacenodithiophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Ji, Dongseob; Lee, Seung-Hoon; Noh, Yong-Young

2018-01-01

The facile sorting of highly pure semiconducting single-walled carbon nanotubes (s-SWNTs) is still one of the challenging issues for the next-generation wearable electronic devices such as various opto-electric devices and field-effect transistors (FETs). Herein, we demonstrate the selective dispersion of high-purity s-SWNTs using indacenodithiophene-co-benzothiadiazole (IDT-BT), which is a state-of-the-art high-mobility conjugated polymer. By the selective wrapping of the IDT-BT copolymer, SWNTs of chiral indices (6, 5), (7, 5), (7, 6), (8, 4), (9, 4), (8, 6), (8, 7), (10, 5), (9, 7), (10, 6), (11, 1), and (13, 3) are sorted. Finally, the networked s-SWNT film formed by spin-coating is applied as an active layer of FETs that exhibited ambipolar characteristics with an average mobility of 2.28 cm2/V s in the p-channel and 2.10 cm2/V s in the n-channel. The ON/OFF ratios in both p- and n-channels are approximately 105, which supports the high purity separation of s-SWNTs wrapped by IDT-BT.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

PubMed

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube

NASA Astrophysics Data System (ADS)

Haruyama, Junji; Takesue, Izumi; Sato, Yuki

2000-10-01

We report on Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube (MWNT) by utilizing a nanoporous alumina film. The MWNT exhibits a weak localization effect with strong spin flip scattering. Experimental results and analysis suggest that a high-impedance external environment caused by the weak localization in the MWNT can yield Coulomb blockade, in accordance with phase correlation theory in a single junction system. It is also revealed that the Coulomb blockade is very sensitive to phase modulation in the MWNT, which also acts as a high-impedance transmission line.

Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

NASA Astrophysics Data System (ADS)

Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

2016-12-01

In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50-5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW-1 and 4.87 × 1010 cm Hz1/2 W-1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems.

Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

PubMed Central

Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

2016-01-01

In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50–5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW−1 and 4.87 × 1010 cm Hz1/2 W−1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems. PMID:27929053

Isolation of Pristine Electronics Grade Semiconducting Carbon Nanotubes by Switching the Rigidity of the Wrapping Polymer Backbone on Demand.

PubMed

Joo, Yongho; Brady, Gerald J; Shea, Matthew J; Oviedo, M Belén; Kanimozhi, Catherine; Schmitt, Samantha K; Wong, Bryan M; Arnold, Michael S; Gopalan, Padma

2015-10-27

Conjugated polymers are among the most selective carbon nanotube sorting agents discovered and enable the isolation of ultrahigh purity semiconducting singled-walled carbon nanotubes (s-SWCNTs) from heterogeneous mixtures that contain problematic metallic nanotubes. The strong selectivity though highly desirable for sorting, also leads to irreversible adsorption of the polymer on the s-SWCNTs, limiting their electronic and optoelectronic properties. We demonstrate how changes in polymer backbone rigidity can trigger its release from the nanotube surface. To do so, we choose a model polymer, namely poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,60-(2,20-bipyridine))] (PFO-BPy), which provides ultrahigh selectivity for s-SWCNTs, which are useful specifically for FETs, and has the chemical functionality (BPy) to alter the rigidity using mild chemistry. Upon addition of Re(CO)5Cl to the solution of PFO-BPy wrapped s-SWCNTs, selective chelation with the BPy unit in the copolymer leads to the unwrapping of PFO-BPy. UV-vis, XPS, and Raman spectroscopy studies show that binding of the metal ligand complex to BPy triggers up to 85% removal of the PFO-BPy from arc-discharge s-SWCNTs (diameter = 1.3-1.7 nm) and up to 72% from CoMoCAT s-SWCNTs (diameter = 0.7-0.8 nm). Importantly, Raman studies show that the electronic structure of the s-SWCNTs is preserved through this process. The generalizability of this method is demonstrated with two other transition metal salts. Molecular dynamics simulations support our experimental findings that the complexation of BPy with Re(CO)5Cl in the PFO-BPy backbone induces a dramatic conformational change that leads to a dynamic unwrapping of the polymer off the nanotube yielding pristine s-SWCNTs.

Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.

PubMed

Yin, Long-Wei; Bando, Yoshio; Li, Mu-Sen; Golberg, Dmitri

2005-11-01

An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.

Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

NASA Astrophysics Data System (ADS)

Yamamoto, Takahiro; Fukuyama, Hidetoshi

2018-02-01

We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

Dominant phonon polarization conversion across dimensionally mismatched interfaces: Carbon-nanotube-graphene junction

NASA Astrophysics Data System (ADS)

Shi, Jingjing; Lee, Jonghoon; Dong, Yalin; Roy, Ajit; Fisher, Timothy S.; Ruan, Xiulin

2018-04-01

Dimensionally mismatched interfaces are emerging for thermal management applications, but thermal transport physics remains poorly understood. Here we consider the carbon-nanotube-graphene junction, which is a dimensionally mismatched interface between one- and two-dimensional materials and is the building block for carbon-nanotube (CNT)-graphene three-dimensional networks. We predict the transmission function of individual phonon modes using the wave packet method; surprisingly, most incident phonon modes show predominantly polarization conversion behavior. For instance, longitudinal acoustic (LA) polarizations incident from CNTs transmit mainly into flexural transverse (ZA) polarizations in graphene. The frequency stays the same as the incident mode, indicating elastic transmission. Polarization conversion is more significant as the phonon wavelength increases. We attribute such unique phonon polarization conversion behavior to the dimensional mismatch across the interface, and it opens significantly new phonon transport channels as compared to existing theories where polarization conversion is neglected.

Carbon Nanotube Based Molecular Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash; Menon, Madhu

1998-01-01

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

A p-i-n junction diode based on locally doped carbon nanotube network

PubMed Central

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-01-01

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

A p-i-n junction diode based on locally doped carbon nanotube network.

PubMed

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-03-21

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~10(4)), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

A p-i-n junction diode based on locally doped carbon nanotube network

NASA Astrophysics Data System (ADS)

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-03-01

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin

2015-08-03

We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11}more » free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.« less

Separated carbon nanotube macroelectronics for active matrix organic light-emitting diode displays.

PubMed

Zhang, Jialu; Fu, Yue; Wang, Chuan; Chen, Po-Chiang; Liu, Zhiwei; Wei, Wei; Wu, Chao; Thompson, Mark E; Zhou, Chongwu

2011-11-09

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Preseparated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components, such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

Separated Carbon Nanotube Macroelectronics for Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Fu, Yue; Zhang, Jialu; Wang, Chuan; Chen, Pochiang; Zhou, Chongwu

2012-02-01

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Pre-separated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

β-armchair antimony nanotube: Structure, stability and electronic properties

NASA Astrophysics Data System (ADS)

Singh, Shilpa; Gupta, Sanjeev K.; Sonvane, Yogesh; Gajjar, P. N.

2018-05-01

In the present work, we have used density functional theory (DFT) to investigate the structure, stability and electronic properties of β-armchair antimony nanotube (ASbNT). We have calculated formation energy and found that β-armchair antimony nanotube (ASbNT) is energetically less stable than β-antimonene. The result shows that β-ASbNT of higher diameter are more stable than nanotubes of lower diameter while electronic band structure shows semiconducting nature of these nanotubes.

Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

NASA Astrophysics Data System (ADS)

Xu, Wenya; Zhao, Jianwen; Qian, Long; Han, Xianying; Wu, Liangzhuan; Wu, Weichen; Song, Minshun; Zhou, Lu; Su, Wenming; Wang, Chao; Nie, Shuhong; Cui, Zheng

2014-01-01

A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10-3 A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 104 and output current up to 3.5 × 10-4 A at Vscan = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10-3 A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 104 and output current up to 3.5 × 10-4 A at Vscan = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving

Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

NASA Astrophysics Data System (ADS)

Lee, Yongwoo; Yoon, Jinsu; Choi, Bongsik; Lee, Heesung; Park, Jinhee; Jeon, Minsu; Han, Jungmin; Lee, Jieun; Kim, Yeamin; Kim, Dae Hwan; Kim, Dong Myong; Choi, Sung-Jin

2017-10-01

Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-printed source/drain (S/D) electrodes. Thus, the contact interfaces comprising the overlap between CNTs and metal S/D electrodes play a particularly dominant role in determining the performances and degree of variability in the CNT-TFTs with inkjet-printed S/D electrodes. In this work, the CNT-TFTs with improved device performance are demonstrated to enhance contact interfaces by controlling the CNT density at the network channel and underneath the inkjet-printed S/D electrodes during the formation of a CNT network channel. The origin of the improved device performance was systematically investigated by extracting Rcontact in the CNT-TFTs with the enhanced contact interfaces by depositing a high density of CNTs underneath the S/D electrodes, resulting in a 59% reduction in Rcontact; hence, the key performance metrics were correspondingly improved without sacrificing any other device metrics.

Assessment of chemically separated carbon nanotubes for nanoelectronics.

PubMed

Zhang, Li; Zaric, Sasa; Tu, Xiaomin; Wang, Xinran; Zhao, Wei; Dai, Hongjie

2008-02-27

It remains an elusive goal to obtain high performance single-walled carbon-nanotube (SWNT) electronics such as field effect transistors (FETs) composed of single- or few-chirality SWNTs, due to broad distributions in as-grown materials. Much progress has been made by various separation approaches to obtain materials enriched in metal or semiconducting nanotubes or even in single chiralties. However, research in validating SWNT separations by electrical transport measurements and building functional electronic devices has been scarce. Here, we performed length, diameter, and chirality separation of DNA functionalized HiPco SWNTs by chromatography methods, and we characterized the chiralities by photoluminescence excitation spectroscopy, optical absorption spectroscopy, and electrical transport measurements. The use of these combined methods provided deeper insight to the degree of separation than either technique alone. Separation of SWNTs by chirality and diameter occurred at varying degrees that decreased with increasing tube diameter. This calls for new separation methods capable of metallicity or chirality separation of large diameter SWNTs (in the approximately 1.5 nm range) needed for high performance nanoelectronics. With most of the separated fractions enriched in semiconducting SWNTs, nanotubes placed in parallel in short-channel (approximately 200 nm) electrical devices fail to produce FETs with high on/off switching, indicating incomplete elimination of metallic species. In rare cases with a certain separated SWNT fraction, we were able to fabricate FET devices composed of small-diameter, chemically separated SWNTs in parallel, with high on-/off-current (I(on)/I(off)) ratios up to 105 owing to semiconducting SWNTs with only a few (n,m) chiralities in the fraction. This was the first time that chemically separated SWNTs were used for short channel, all-semiconducting SWNT electronics dominant by just a few (n,m)'s. Nevertheless, the results suggest that

Graphene-carbon nanotube hybrid materials and use as electrodes

DOEpatents

Tour, James M.; Zhu, Yu; Li, Lei; Yan, Zheng; Lin, Jian

2016-09-27

Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

Quantum transport properties of carbon nanotube field-effect transistors with electron-phonon coupling

NASA Astrophysics Data System (ADS)

Ishii, Hiroyuki; Kobayashi, Nobuhiko; Hirose, Kenji

2007-11-01

We investigated the electron-phonon coupling effects on the electronic transport properties of metallic (5,5)- and semiconducting (10,0)-carbon nanotube devices. We calculated the conductance and mobility of the carbon nanotubes with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo-Greenwood formula within a tight-binding approximation. We investigated the scattering effects of both longitudinal acoustic and optical phonon modes on the transport properties. The electron-optical phonon coupling decreases the conductance around the Fermi energy for the metallic carbon nanotubes, while the conductance of semiconductor nanotubes is decreased around the band edges by the acoustic phonons. Furthermore, we studied the Schottky-barrier effects on the mobility of the semiconducting carbon nanotube field-effect transistors for various gate voltages. We clarified how the electron mobilities of the devices are changed by the acoustic phonon.

Coupled study by TEM/EELS and STM/STS of electronic properties of C- and CN-nanotubes

NASA Astrophysics Data System (ADS)

Lin, Hong; Lagoute, Jérôme; Repain, Vincent; Chacon, Cyril; Girard, Yann; Lauret, Jean-Sébastien; Arenal, Raul; Ducastelle, François; Rousset, Sylvie; Loiseau, Annick

2011-12-01

Carbon nanotubes are the focus of considerable research efforts due to their fascinating physical properties. They provide an excellent model system for the study of one-dimensional materials and molecular electronics. The chirality of nanotubes can lead to very different electronic behaviour, either metallic or semiconducting. Their electronic spectrum consists of a series of Van Hove singularities defining a bandgap for semiconducting tubes and molecular orbitals at the corresponding energies. A promising way to tune the nanotubes electronic properties for future applications is to use doping by heteroatoms. Here we report on the experimental investigation of the role of many-body interactions in nanotube bandgaps, the visualization in direct space of the molecular orbitals of nanotubes and the properties of nitrogen doped nanotubes using scanning tunneling microscopy and transmission electron microscopy as well as electron energy loss spectroscopy.

Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods

NASA Astrophysics Data System (ADS)

Schießl, Stefan P.; Rother, Marcel; Lüttgens, Jan; Zaumseil, Jana

2017-11-01

The field-effect mobility is an important figure of merit for semiconductors such as random networks of single-walled carbon nanotubes (SWNTs). However, owing to their network properties and quantum capacitance, the standard models for field-effect transistors cannot be applied without modifications. Several different methods are used to determine the mobility with often very different results. We fabricated and characterized field-effect transistors with different polymer-sorted, semiconducting SWNT network densities ranging from low (≈6 μm-1) to densely packed quasi-monolayers (≈26 μm-1) with a maximum on-conductance of 0.24 μS μm-1 and compared four different techniques to evaluate the field-effect mobility. We demonstrate the limits and requirements for each method with regard to device layout and carrier accumulation. We find that techniques that take into account the measured capacitance on the active device give the most reliable mobility values. Finally, we compare our experimental results to a random-resistor-network model.

Nitrotyrosine adsorption on carbon nanotube: a density functional theory study

NASA Astrophysics Data System (ADS)

Majidi, R.; Karami, A. R.

2014-05-01

We have studied the effect of nitrotyrosine on electronic properties of different single-wall carbon nanotubes by density functional theory. Optimal adsorption configurations of nitrotyrosine adsorbed on carbon nanotube have been determined by calculation of adsorption energy. Adsorption energies indicate that nitrotyrosine is chemisorbed on carbon nanotubes. It is found that the nitrotyrosine adsorption modifies the electronic properties of the semiconducting carbon nanotubes significantly and these nanotubes become n-type semiconductors, while the effect of nitrotyrosine on metallic carbon nanotubes is not considerable and these nanotubes remain metallic. Results clarify sensitivity of carbon nanotubes to nitrotyrosine adsorption and suggest the possibility of using carbon nanotubes as biosensor for nitrotyrosine detection.

Enhanced Contacts for Inverted Metamorphic Multi-Junction Solar Cells Using Carbon Nanotube Metal Matrix Composites

DTIC Science & Technology

2018-01-18

to a variety solar energy markets. For instance, micro-cracks have been shown to cause decreased power output in single- and multi-crystalline Si PV ...fingers in silicon wafer solar cells and PV modules," Solar Energy Materials and Solar Cells, vol. 108, pp. 78-81, 1// 2013. [4] T. H. Reijenga and H...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0125 TR-2017-0125 ENHANCED CONTACTS FOR INVERTED METAMORPHIC MULTI-JUNCTION SOLAR CELLS USING CARBON NANOTUBE METAL

Single Wall Nanotube Type-Specific Functionalization and Separation

NASA Technical Reports Server (NTRS)

Boul, Peter; Nikolaev, Pavel; Sosa, Edward; Arepalli, Sivaram; Yowell, Leonard

2008-01-01

Metallic single-wall carbon nanotubes were selectively solubilized in THF and separated from semiconducting nanotubes. Once separated, the functionalized metallic tubes were de-functionalized to restore their metallic band structure. Absorption and Raman spectroscopy of the enriched samples support conclusions of the enrichment of nanotube samples by metallic type. A scalable method for enriching nanotube conductive type has been developed. Raman and UV-Vis data indicate SWCNT reaction with dodecylbenzenediazonium results in metallic enrichment. It is expected that further refinement of this techniques will lead to more dramatic separations of types and diameters.

Photoinduced Spontaneous Free-Carrier Generation in Semiconducting Single-Walled Carbon Nanotubes

DOE PAGES

Park, Jaehong; Reid, Obadiah G.; Blackburn, Jeffrey L.; ...

2015-11-04

The strong quantum confinement and low dielectric screening impart single-walled carbon nanotubes with exciton-binding energies substantially exceeding kBT at room temperature. Despite these large binding energies, reported photoluminescence quantum yields are typically low and some studies suggest that photoexcitation of carbon nanotube excitonic transitions can produce free charge carriers. Here we report the direct measurement of long-lived free-carrier generation in chirality-pure, single-walled carbon nanotubes in a low dielectric solvent. Time-resolved microwave conductivity enables contactless and quantitative measurement of the real and imaginary photoconductance of individually suspended nanotubes. We found that the conditions of the microwave conductivity measurement allow us tomore » avoid the complications of most previous measurements of nanotube free-carrier generation, including tube–tube/tube–electrode contact, dielectric screening by nearby excitons and many-body interactions. At low photon fluence (approximately 0.05 excitons per μm length of tubes), we directly observe free carriers on excitation of the first and second carbon nanotube exciton transitions.« less

Carbon nanotube transistors scaled to a 40-nanometer footprint.

PubMed

Cao, Qing; Tersoff, Jerry; Farmer, Damon B; Zhu, Yu; Han, Shu-Jen

2017-06-30

The International Technology Roadmap for Semiconductors challenges the device research community to reduce the transistor footprint containing all components to 40 nanometers within the next decade. We report on a p-channel transistor scaled to such an extremely small dimension. Built on one semiconducting carbon nanotube, it occupies less than half the space of leading silicon technologies, while delivering a significantly higher pitch-normalized current density-above 0.9 milliampere per micrometer at a low supply voltage of 0.5 volts with a subthreshold swing of 85 millivolts per decade. Furthermore, we show transistors with the same small footprint built on actual high-density arrays of such nanotubes that deliver higher current than that of the best-competing silicon devices under the same overdrive, without any normalization. We achieve this using low-resistance end-bonded contacts, a high-purity semiconducting carbon nanotube source, and self-assembly to pack nanotubes into full surface-coverage aligned arrays. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

NASA Astrophysics Data System (ADS)

Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

2016-06-01

The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m

Fabrication and functionalization of carbon nanotube field effect transistors for bio-sensing applications

NASA Astrophysics Data System (ADS)

Zhou, Jianyun

Single walled carbon nanotube based field effect transistors are fabricated using photolithography and electron beam lithography techniques. First catalyst islands are deposited onto the substrate using standard optical lithographic techniques, and the nanotubes are grown by catalytic chemical vapor deposition from the pre-patterned catalyst islands. After imaging the grown nanotubes, the metal contact electrodes are patterned using lithography, followed by metal deposition using a sputtering technique. Both single nanotube devices and nanotube film devices are fabricated using this method. The single nanotube devices can be semiconducting, ambipolar, or metallic, with the resistance ranging from tens of kilo ohms to a few mega ohms, while the film devices are generally metallic, with only a few kilo ohms of resistance. Semiconducting single nanotube devices are functionalized for sensor applications. An electrodeposition technique was developed to functionalize the nanotube with a few materials, including avidin, chitosan, and metal nanoparticles. Among them, metal nanoparticle deposition is the most successful, and both gold and silver nanoparticles have been successfully deposited onto the sidewalls of the nanotubes from an "in situ" sacrificial electrode. The size and density of the nanoparticles, to some extent, can be tailored by controlling the deposition voltage. The gold nanoparticles are generally spherical, while the silver nanoparticles have branching snowflake shapes. These nanoparticles change the ON-state conductance of the nanotube while maintaining its semiconducting characteristics. The gold nanoparticles on the nanotube sidewalls can serve as anchoring sites for thiol-terminated biomolecules to functionalize the device for biosensing purposes. Results have shown that the thiol-terminated molecules can bind to the Au nanoparticles; however, nonspecific binding to the SiO2 surface is still abundant. Therefore, a self assembled monolayer (SAM) of

Facile fabrication of organic/inorganic nanotube heterojunction arrays for enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Chen, Yingzhi; Li, Aoxiang; Yue, Xiaoqi; Wang, Lu-Ning; Huang, Zheng-Hong; Kang, Feiyu; Volinsky, Alex A.

2016-07-01

Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi) layer were fabricated for photoelectrochemical water splitting. In this arrayed architecture, a PDi layer with a tunable thickness was coated on anodic TiO2 nanotube arrays by physical vapor deposition, which is advantageous for the formation of a uniform layer and an adequate interface contact between PDi and TiO2. The obtained PDi/TiO2 junction exhibited broadened visible light absorption, and an effective interface for enhanced photogenerated electron-hole separation, which is supported by the reduced charge transfer resistance and prolonged excitation lifetime via impedance spectroscopy analysis and fluorescence emission decay investigations. Consequently, such a heterojunction photoanode was photoresponsive to a wide visible light region of 400-600 nm, and thus demonstrated a highly enhanced photocurrent density at 1.23 V vs. a reversible hydrogen electrode. Additionally, the durability of such a photoanode can be guaranteed after long-time illumination because of the geometrical restraint imposed by the PDi aggregates. These results pave the way to discover new organic/inorganic assemblies for high-performance photoelectric applications and device integration.Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi

Raman studies of single-walled carbon nanotubes synthesized by pulsed laser ablation at room temperature

NASA Astrophysics Data System (ADS)

Dixit, Saurabh; Shukla, A. K.

2018-06-01

In this article, single-walled carbon nanotubes (SWCNTs) are synthesized at room temperature using pulsed laser ablation of ferrocene mixed graphitic target. Radial breathing mode (RBM) reveals the presence of semiconducting SWCNTs of multiple diameters. Quantum confinement model is developed for Raman line-shape of G - feature. It is invoked here that G-feature is the manifestation of TO phonons in the semiconducting SWCNTs. Disorder in the SWCNTs is studied here as a function of the concentration of ferrocene in the graphitic target using X-ray diffraction analysis, oscillator strength of G - feature and D mode and Raman line-shape model of G - feature. Furthermore, phonon softening of G - feature of semiconducting SWCNTs is observed as a function of the diameter of nanotube.

Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

PubMed Central

Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

2016-01-01

A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED).

PubMed

Xu, Wenya; Zhao, Jianwen; Qian, Long; Han, Xianying; Wu, Liangzhuan; Wu, Weichen; Song, Minshun; Zhou, Lu; Su, Wenming; Wang, Chao; Nie, Shuhong; Cui, Zheng

2014-01-01

A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10(-3) A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 10(4) and output current up to 3.5 × 10(-4) A at V(scan) = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.

Effect of semiconductor polymer backbone structures and side-chain parameters on the facile separation of semiconducting single-walled carbon nanotubes from as-synthesized mixtures

NASA Astrophysics Data System (ADS)

Lee, Dennis T.; Chung, Jong Won; Park, Geonhee; Kim, Yun-Tae; Lee, Chang Young; Cho, Yeonchoo; Yoo, Pil J.; Han, Jae-Hee; Shin, Hyeon-Jin; Kim, Woo-Jae

2018-01-01

Semiconducting single-walled carbon nanotubes (SWNTs) show promise as core materials for next-generation solar cells and nanoelectronic devices. However, most commercial SWNT production methods generate mixtures of metallic SWNTs (m-SWNTs) and semiconducting SWNT (sc-SWNTs). Therefore, sc-SWNTs must be separated from their original mixtures before use. In this study, we investigated a polymer-based, noncovalent sc-SWNT separation approach, which is simple to perform and does not disrupt the electrical properties of the SWNTs, thus improving the performance of the corresponding sc-SWNT-based applications. By systematically investigating the effect that different structural features of the semiconductor polymer have on the separation of sc-SWNTs, we discovered that the length and configuration of the alkyl side chains and the rigidity of the backbone structure exert significant effects on the efficiency of sc-SWNT separation. We also found that electron transfer between the semiconductor polymers and sc-SWNTs is strongly affected by their energy-level alignment, which can be tailored by controlling the donor-acceptor configuration in the polymer backbone structures. Among the polymers investigated, the highly planar P8T2Z-C12 semiconductor polymer showed the best sc-SWNT separation efficiency and unprecedentedly strong electronic interaction with the sc-SWNTs, which is important for improving their performance in applications.

Electrical device fabrication from nanotube formations

DOEpatents

Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

2013-03-12

A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasai, S.; Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198; Takahashi, Y. K.

2016-07-18

We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

Carbon Nanotubes: Molecular Electronic Components

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash; Menon, Madhu

1997-01-01

The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale molecular electronic networks. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal graphene sheet, more complex joints require other mechanisms. In this work we explore structural characteristics of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme. The study of pi-electron local densities of states (LDOS) of these junctions reveal many interesting features, most prominent among them being the defect-induced states in the gap.

On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

PubMed

Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

2017-06-01

In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm 2 V -1 s -1 ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

PubMed

Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

2017-10-17

Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

DOEpatents

Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

2015-02-03

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer.

PubMed

Toshimitsu, Fumiyuki; Nakashima, Naotoshi

2015-12-14

The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites.

Carbon Nanotube Thermoelectric Coolers

DTIC Science & Technology

2015-02-06

project, we studied other approaches to highly efficient thermoelectric energy transformation using nanotube and monoatomic materials . This...and implementing advanced semiconducting materials with large thermal conductance Λ. In this respect, carbon-based low-dimensional materials like...with a material which Λph is very low whereas the electron part, Λe, is high. Here decimating the phonon part of heat conductance is accomplished by

Analysis of long-channel nanotube field-effect-transistors (NT FETs)

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

2001-01-01

This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

Growth of nanotubes and chemical sensor applications

NASA Astrophysics Data System (ADS)

Hone, James; Kim, Philip; Huang, X. M. H.; Chandra, B.; Caldwell, R.; Small, J.; Hong, B. H.; Someya, T.; Huang, L.; O'Brien, S.; Nuckolls, Colin P.

2004-12-01

We have used a number of methods to grow long aligned single-walled carbon nanotubes. Geometries include individual long tubes, dense parallel arrays, and long freely suspended nanotubes. We have fabricated a variety of devices for applications such as multiprobe resistance measurement and high-current field effect transistors. In addition, we have measured conductance of single-walled semiconducting carbon nanotubes in field-effect transistor geometry and investigated the device response to water and alcoholic vapors. We observe significant changes in FET drain current when the device is exposed to various kinds of different solvent. These responses are reversible and reproducible over many cycles of vapor exposure. Our experiments demonstrate that carbon nanotube FETs are sensitive to a wide range of solvent vapors at concentrations in the ppm range.

Nature and electronic properties of Y-junctions in CNTs and N-doped CNTs obtained by the pyrolysis of organometallic precursors

NASA Astrophysics Data System (ADS)

Deepak, F. L.; John, Neena Susan; Govindaraj, A.; Kulkarni, G. U.; Rao, C. N. R.

2005-08-01

Carbon nanotubes (CNTs) and N-doped CNTs with Y-junctions have been prepared by the pyrolysis of nickelocene-thiophene and nickel phthalocyanine-thiophene mixtures, respectively, the latter being reported for the first time. The junctions are free from the presence of sulfur and contain only carbon or carbon and nitrogen. The electronic properties of the junction nanotubes have been investigated by scanning tunneling microscopy. Tunneling conductance measurements reveal rectifying behavior with regions of coulomb blockade, the effect being much larger in the N-doped junction nanotubes.

Mechanism of the coupling of diazonium to single-walled carbon nanotubes and its consequences.

PubMed

Schmidt, Grégory; Gallon, Salomé; Esnouf, Stéphane; Bourgoin, Jean-Philippe; Chenevier, Pascale

2009-01-01

On the tube: The coupling of diazonium ions onto single-walled carbon nanotubes is shown to proceed through a radical chain reaction by kinetic analysis of the absorption peak drop (see picture). Radical species are also revealed by ESR. Metallic (m) nanotubes play a special catalytic role in the functionalization of semiconducting (sc) nanotubes.Due to its simplicity and versatility, diazonium coupling is the most widely used method for carbon nanotube (CNT) functionalization to increase CNT processability and add new functionalities. Yet, its mechanism is so far mostly unknown. Herein, we use kinetic analysis to shed light on this complex mechanism. A free-radical chain reaction is revealed by absorption spectroscopy and ESR. Metallic CNTs are shown to play an unexpected catalytic role. The step determining the selectivity towards metallic CNTs is identified by a Hammett correlation. A mechanistic model is proposed that predicts reactivity and selectivity as a function of diazonium electrophilicity and metallic-to-semiconducting CNT ratio, thus opening perspectives of controlled high-yield functionalization and purification.

Electronic transport properties of inner and outer shells in near ohmic-contacted double-walled carbon nanotube transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuchun; Zhou, Liyan; Zhao, Shangqian

2014-06-14

We investigate electronic transport properties of field-effect transistors based on double-walled carbon nanotubes, of which inner shells are metallic and outer shells are semiconducting. When both shells are turned on, electron-phonon scattering is found to be the dominant phenomenon. On the other hand, when outer semiconducting shells are turned off, a zero-bias anomaly emerges in the dependence of differential conductance on the bias voltage, which is characterized according to the Tomonaga-Luttinger liquid model describing tunneling into one-dimensional materials. We attribute these behaviors to different contact conditions for outer and inner shells of the double-walled carbon nanotubes. A simple model combiningmore » Luttinger liquid model for inner metallic shells and electron-phonon scattering in outer semiconducting shells is given here to explain our transport data at different temperatures.« less

Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

2016-10-01

Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

PubMed

Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

2010-07-27

We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

Boron nitride nanotubes and nanosheets.

PubMed

Golberg, Dmitri; Bando, Yoshio; Huang, Yang; Terao, Takeshi; Mitome, Masanori; Tang, Chengchun; Zhi, Chunyi

2010-06-22

Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), a BN nanotube (BNNT) was first predicted in 1994; since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a band gap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess a high chemical stability, excellent mechanical properties, and high thermal conductivity. The same advantages are likely applicable to a graphene analogue-a monatomic layer of a hexagonal BN. Such unique properties make BN nanotubes and nanosheets a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, functional composites, hydrogen accumulators, electrically insulating substrates perfectly matching the CNT, and graphene lattices. This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotube/nanosheet developments.

Polychiral semiconducting carbon nanotube-fullerene solar cells.

PubMed

Gong, Maogang; Shastry, Tejas A; Xie, Yu; Bernardi, Marco; Jasion, Daniel; Luck, Kyle A; Marks, Tobin J; Grossman, Jeffrey C; Ren, Shenqiang; Hersam, Mark C

2014-09-10

Single-walled carbon nanotubes (SWCNTs) have highly desirable attributes for solution-processable thin-film photovoltaics (TFPVs), such as broadband absorption, high carrier mobility, and environmental stability. However, previous TFPVs incorporating photoactive SWCNTs have utilized architectures that have limited current, voltage, and ultimately power conversion efficiency (PCE). Here, we report a solar cell geometry that maximizes photocurrent using polychiral SWCNTs while retaining high photovoltage, leading to record-high efficiency SWCNT-fullerene solar cells with average NREL certified and champion PCEs of 2.5% and 3.1%, respectively. Moreover, these cells show significant absorption in the near-infrared portion of the solar spectrum that is currently inaccessible by many leading TFPV technologies.

Wrinkling and folding of nanotube-polymer bilayers

NASA Astrophysics Data System (ADS)

Semler, Matthew R.; Harris, John M.; Hobbie, Erik K.

2014-07-01

The influence of a polymer capping layer on the deformation of purified single-wall carbon nanotube (SWCNT) networks is analyzed through the wrinkling of compressed SWCNT-polymer bilayers on polydimethylsiloxane. The films exhibit both wrinkling and folding under compression and we extract the elastoplastic response using conventional two-plate buckling schemes. The formation of a diffuse interpenetrating nanotube-polymer interface has a dramatic effect on the nanotube layer modulus for both metallic and semiconducting species. In contrast to the usual percolation exhibited by the pure SWCNT films, the capped films show a crossover from "composite" behavior (the modulus of the SWCNT film is enhanced by the polymer) to "plasticized" behavior (the modulus of the SWCNT film is reduced by the polymer) as the SWCNT film thickness increases. For almost all thicknesses, however, the polymer enhances the yield strain of the nanotube network. Conductivity measurements on identical films suggest that the polymer has a modest effect on charge transport, which we interpret as a strain-induced polymer penetration of interfacial nanotube contacts. We use scaling, Flory-Huggins theory, and independently determined nanotube-nanotube and nanotube-polymer Hamaker constants to model the response.

Simulation of carbon nanotube welding through Ar bombardment.

PubMed

Kucukkal, Mustafa U; Stuart, Steven J

2017-04-01

Single-walled carbon nanotubes show promise as nanoscale transistors for nanocomputing applications. This use will require appropriate methods for creating electrical connections between distinct nanotubes, analogous to welding of metallic wires at larger length scales, but methods for performing nanoscale chemical welding are not yet sufficiently understood. This study examines the effect of Ar bombardment on the junction of two crossed single-walled carbon nanotubes, to understand the value and limitations of this method for generating connections between nanotubes. A geometric criterion was used to assess the quality of the junctions formed, with the goal of identifying the most productive conditions for experimental ion bombardment. In particular, the effects of nanotube chirality, Ar impact kinetic energy, impact particle flux and fluence, and annealing temperature were considered. The most productive bombardment conditions, leading to the most crosslinking of the tubes with the smallest loss of graphitic (i.e., conductive) character, were found to be at relatively mild impact energies (100 eV), with low flux and high-temperature (3000 K) annealing. Particularly noteworthy for experimental application, a high junction quality is maintained for a relatively broad range of fluences, from 3 × 10 19  m -2 to at least 1 × 10 20  m -2 .

Boron Nitride Nanotubes for Engineering Applications

NASA Technical Reports Server (NTRS)

Hurst, Janet; Hull, David; Gorican, Daniel

2005-01-01

Boron nitride nanotubes (BNNT) are of significant interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted wide attention. Both materials have potentially unique and important properties for structural and electronic applications. However of even more consequence than their similarities may be the complementary differences between carbon and boron nitride nanotubes While BNNT possess a very high modulus similar to CNT, they also possess superior chemical and thermal stability. Additionally, BNNT have more uniform electronic properties, with a uniform band gap of 5.5 eV while CNT vary from semi-conductive to highly conductive behavior. Boron nitride nanotubes have been synthesized both in the literature and at NASA Glenn Research Center, by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistent large scale production of a reliable product has proven difficult. Progress in the reproducible synthesis of 1-2 gram sized batches of boron nitride nanotubes will be discussed as well as potential uses for this unique material.

Nanoscale thermocapillarity enabled purification for horizontally aligned arrays of single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Jin, Sung Hun; Dunham, Simon; Xie, Xu; Rogers, John A.

2015-09-01

Among the remarkable variety of semiconducting nanomaterials that have been discovered over the past two decades, single-walled carbon nanotubes remain uniquely well suited for applications in high-performance electronics, sensors and other technologies. The most advanced opportunities demand the ability to form perfectly aligned, horizontal arrays of purely semiconducting, chemically pristine carbon nanotubes. Here, we present strategies that offer this capability. Nanoscale thermos-capillary flows in thin-film organic coatings followed by reactive ion etching serve as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous aligned arrays grown on quartz substrates. The low temperatures and unusual physics associated with this process enable robust, scalable operation, with clear potential for practical use. Especially for the purpose of selective joule heating over only metallic nanotubes, two representative platforms are proposed and confirmed. One is achieved by selective joule heating associated with thin film transistors with partial gate structure. The other is based on a simple, scalable, large-area scheme through microwave irradiation by using micro-strip dipole antennas of low work-function metals. In this study, based on purified semiconducting SWNTs, we demonstrated field effect transistors with mobility (> 1,000 cm2/Vsec) and on/off switching ratio (~10,000) with current outputs in the milliamp range. Furthermore, as one demonstration of the effectiveness over large area-scalability and simplicity, implementing the micro-wave based purification, on large arrays consisting of ~20,000 SWNTs completely removes all of the m-SWNTs (~7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

Scanning microwave microscopy applied to semiconducting GaAs structures

NASA Astrophysics Data System (ADS)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Majorana splitting from critical currents in Josephson junctions

NASA Astrophysics Data System (ADS)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

Mechanical properties of DNA origami nanoassemblies are determined by Holliday junction mechanophores

PubMed Central

Shrestha, Prakash; Emura, Tomoko; Koirala, Deepak; Cui, Yunxi; Hidaka, Kumi; Maximuck, William J; Endo, Masayuki; Sugiyama, Hiroshi; Mao, Hanbin

2016-01-01

DNA nanoassemblies have demonstrated wide applications in various fields including nanomaterials, drug delivery and biosensing. In DNA origami, single-stranded DNA template is shaped into desired nanostructure by DNA staples that form Holliday junctions with the template. Limited by current methodologies, however, mechanical properties of DNA origami structures have not been adequately characterized, which hinders further applications of these materials. Using laser tweezers, here, we have described two mechanical properties of DNA nanoassemblies represented by DNA nanotubes, DNA nanopyramids and DNA nanotiles. First, mechanical stability of DNA origami structures is determined by the effective density of Holliday junctions along a particular stress direction. Second, mechanical isomerization observed between two conformations of DNA nanotubes at 10–35 pN has been ascribed to the collective actions of individual Holliday junctions, which are only possible in DNA origami with rotational symmetric arrangements of Holliday junctions, such as those in DNA nanotubes. Our results indicate that Holliday junctions control mechanical behaviors of DNA nanoassemblies. Therefore, they can be considered as ‘mechanophores’ that sustain mechanical properties of origami nanoassemblies. The mechanical properties observed here provide insights for designing better DNA nanostructures. In addition, the unprecedented mechanical isomerization process brings new strategies for the development of nano-sensors and actuators. PMID:27387283

Chirality Characterization of Dispersed Single Wall Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Namkung, Min; Williams, Phillip A.; Mayweather, Candis D.; Wincheski, Buzz; Park, Cheol; Namkung, Juock S.

2005-01-01

Raman scattering and optical absorption spectroscopy are used for the chirality characterization of HiPco single wall carbon nanotubes (SWNTs) dispersed in aqueous solution with the surfactant sodium dodecylbenzene sulfonate. Radial breathing mode (RBM) Raman peaks for semiconducting and metallic SWNTs are identified by directly comparing the Raman spectra with the Kataura plot. The SWNT diameters are calculated from these resonant peak positions. Next, a list of (n, m) pairs, yielding the SWNT diameters within a few percent of that obtained from each resonant peak position, is established. The interband transition energies for the list of SWNT (n, m) pairs are calculated based on the tight binding energy expression for each list of the (n, m) pairs, and the pairs yielding the closest values to the corresponding experimental optical absorption peaks are selected. The results reveal that (1, 11), (4, 11), and (0, 11) as the most probable chiralities of the semiconducting nanotubes. The results also reveal that (4, 16), (6, 12) and (8, 8) are the most probable chiralities for the metallic nanotubes. Directly relating the Raman scattering data to the optical absorption spectra, the present method is considered the simplest technique currently available. Another advantage of this technique is the use of the E(sup 8)(sub 11) peaks in the optical absorption spectrum in the analysis to enhance the accuracy in the results.

Pressure Dependence of the Radial Breathing Mode of Carbon Nanotubes: The Effect of Fluid Adsorption

NASA Astrophysics Data System (ADS)

Longhurst, M. J.; Quirke, N.

2007-04-01

The pressure dependence of shifts in the vibrational modes of individual carbon nanotubes is strongly affected by the nature of the pressure transmitting medium as a result of adsorption at the nanotube surface. The adsorbate is treated as an elastic shell which couples with the radial breathing mode (RBM) of the nanotube via van der Waal interactions. Using analytical methods as well as molecular simulation, we observe a low frequency breathing mode for the adsorbed fluid at ˜50cm-1, as well as diameter dependent upshifts in the RBM frequency with pressure, suggesting metallic nanotubes may wet more than semiconducting ones.

What happens in Josephson junctions at high critical current densities

NASA Astrophysics Data System (ADS)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

Junction-based field emission structure for field emission display

DOEpatents

Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

2002-01-01

A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

Long-Lived Charge Separation at Heterojunctions between Semiconducting Single-Walled Carbon Nanotubes and Perylene Diimide Electron Acceptors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Hyun Suk; Sisto, Thomas J.; Peurifoy, Samuel

Nonfullerene electron acceptors have facilitated a recent surge in the efficiencies of organic solar cells, although fundamental studies of the nature of exciton dissociation at interfaces with nonfullerene electron acceptors are still relatively sparse. Semiconducting single-walled carbon nanotubes (s-SWCNTs), unique one-dimensional electron donors with molecule-like absorption and highly mobile charges, provide a model system for studying interfacial exciton dissociation. Here, we investigate excited-state photodynamics at the heterojunction between (6,5) s-SWCNTs and two perylene diimide (PDI)-based electron acceptors. Each of the PDI-based acceptors, hPDI2-pyr-hPDI2 and Trip-hPDI2, is deposited onto (6,5) s-SWCNT films to form a heterojunction bilayer. Transient absorption measurements demonstratemore » that photoinduced hole/electron transfer occurs at the photoexcited bilayer interfaces, producing long-lived separated charges with lifetimes exceeding 1.0 us. Both exciton dissociation and charge recombination occur more slowly for the hPDI2-pyr-hPDI2 bilayer than for the Trip-hPDI2 bilayer. To explain such differences, we discuss the potential roles of the thermodynamic charge transfer driving force available at each interface and the different molecular structure and intermolecular interactions of PDI-based acceptors. As a result, detailed photophysical analysis of these model systems can develop the fundamental understanding of exciton dissociation between organic electron donors and nonfullerene acceptors, which has not been systematically studied.« less

Long-Lived Charge Separation at Heterojunctions between Semiconducting Single-Walled Carbon Nanotubes and Perylene Diimide Electron Acceptors

DOE PAGES

Kang, Hyun Suk; Sisto, Thomas J.; Peurifoy, Samuel; ...

2018-04-13

Nonfullerene electron acceptors have facilitated a recent surge in the efficiencies of organic solar cells, although fundamental studies of the nature of exciton dissociation at interfaces with nonfullerene electron acceptors are still relatively sparse. Semiconducting single-walled carbon nanotubes (s-SWCNTs), unique one-dimensional electron donors with molecule-like absorption and highly mobile charges, provide a model system for studying interfacial exciton dissociation. Here, we investigate excited-state photodynamics at the heterojunction between (6,5) s-SWCNTs and two perylene diimide (PDI)-based electron acceptors. Each of the PDI-based acceptors, hPDI2-pyr-hPDI2 and Trip-hPDI2, is deposited onto (6,5) s-SWCNT films to form a heterojunction bilayer. Transient absorption measurements demonstratemore » that photoinduced hole/electron transfer occurs at the photoexcited bilayer interfaces, producing long-lived separated charges with lifetimes exceeding 1.0 us. Both exciton dissociation and charge recombination occur more slowly for the hPDI2-pyr-hPDI2 bilayer than for the Trip-hPDI2 bilayer. To explain such differences, we discuss the potential roles of the thermodynamic charge transfer driving force available at each interface and the different molecular structure and intermolecular interactions of PDI-based acceptors. As a result, detailed photophysical analysis of these model systems can develop the fundamental understanding of exciton dissociation between organic electron donors and nonfullerene acceptors, which has not been systematically studied.« less

Periodically striped films produced from super-aligned carbon nanotube arrays.

PubMed

Liu, Kai; Sun, Yinghui; Liu, Peng; Wang, Jiaping; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

2009-08-19

We report a novel way to draw films from super-aligned carbon nanotube arrays at large drawing angles. The obtained super-aligned carbon nanotube films have a periodically striped configuration with alternating thinner and thicker film sections, and the width of the stripes is equal to the height of the original arrays. Compared with ordinary uniform films, the striped films provide a better platform for understanding the mechanism of spinning films from arrays because carbon nanotube junctions are easily observed and identified at the boundary of the stripes. Further studies show that the carbon nanotube junctions are bottleneck positions for thermal conduction and mechanical strength of the film, but do not limit its electrical conduction. These films can be utilized as striped and high-degree polarized light emission sources. Our results will be valuable for new applications and future large-scale production of tunable super-aligned carbon nanotube films.

Coupling of carbon and peptide nanotubes.

PubMed

Montenegro, Javier; Vázquez-Vázquez, Carlos; Kalinin, Arseny; Geckeler, Kurt E; Granja, Juan R

2014-02-12

Two of the main types of nanotubular architectures are the single-walled carbon nanotubes (SWCNTs) and the self-assembling cyclic peptide nanotubes (SCPNs). We here report the preparation of the dual composite resulting from the ordered combination of both tubular motifs. In the resulting architecture, the SWCNTs can act as templates for the assembly of SCPNs that engage the carbon nanotubes noncovalently via pyrene "paddles", each member of the resulting hybrid stabilizing the other in aqueous solution. The particular hybrids obtained in the present study formed highly ordered oriented arrays and display complementary properties such as electrical conductivity. Furthermore, a self-sorting of the cyclic peptides toward semiconducting rather than metallic SWCNTs is also observed in the aqueous dispersions. It is envisaged that a broad range of exploitable properties may be achieved and/or controlled by varying the cyclic peptide components of similar SWCNT/SCPN hybrids.

Development of a Fabrication Path for Au-Organothiol-Carbon Nanotube Molecular Junctions

NASA Astrophysics Data System (ADS)

Moscatello, Jason

2011-04-01

Silicon electronics is at the scaling limit and new approaches are necessary. Nanomaterials have significant promise in addressing this problem and each has its own potentially useful properties; yet making the material is only the first step in harnessing those properties. Transitioning from developing materials to integrating them into devices is no small endeavor - placement, wiring, etc. are nontrivial on the nanoscale. This talk details work done at Michigan Tech developing a fabrication process for Molecular Electronic Junctions (MEJs). The goal is to study the lifetime of MEJs containing strong bonds because short lifetime is the largest limiting factor in many MEJs. It is important that the physics studied remains accurate even if the size is scaled down and the MEJs are arranged into arrays - two things that are necessary for MEJs to be used commercially. In addition the process is widely usable, since it only utilizes inexpensive and/or common processes (e.g. dielectrophoresis and photolithography). An overview of the fabrication process will be detailed, along with carbon nanotube (top electrode) placement by dielectrophoresis, and initial results.

Mechanical properties of DNA origami nanoassemblies are determined by Holliday junction mechanophores.

PubMed

Shrestha, Prakash; Emura, Tomoko; Koirala, Deepak; Cui, Yunxi; Hidaka, Kumi; Maximuck, William J; Endo, Masayuki; Sugiyama, Hiroshi; Mao, Hanbin

2016-08-19

DNA nanoassemblies have demonstrated wide applications in various fields including nanomaterials, drug delivery and biosensing. In DNA origami, single-stranded DNA template is shaped into desired nanostructure by DNA staples that form Holliday junctions with the template. Limited by current methodologies, however, mechanical properties of DNA origami structures have not been adequately characterized, which hinders further applications of these materials. Using laser tweezers, here, we have described two mechanical properties of DNA nanoassemblies represented by DNA nanotubes, DNA nanopyramids and DNA nanotiles. First, mechanical stability of DNA origami structures is determined by the effective density of Holliday junctions along a particular stress direction. Second, mechanical isomerization observed between two conformations of DNA nanotubes at 10-35 pN has been ascribed to the collective actions of individual Holliday junctions, which are only possible in DNA origami with rotational symmetric arrangements of Holliday junctions, such as those in DNA nanotubes. Our results indicate that Holliday junctions control mechanical behaviors of DNA nanoassemblies. Therefore, they can be considered as 'mechanophores' that sustain mechanical properties of origami nanoassemblies. The mechanical properties observed here provide insights for designing better DNA nanostructures. In addition, the unprecedented mechanical isomerization process brings new strategies for the development of nano-sensors and actuators. © The Author(s) 2016. Published by Oxford University Press on behalf of Nucleic Acids Research.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

PubMed

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Asymmetric resonance Raman excitation profiles and violation of the Condon approximation in single-wall carbon nanotubes

NASA Astrophysics Data System (ADS)

Doorn, Stephen; Duque, Juan; Telg, Hagen; Chen, Hang; Swan, Anna; Haroz, Erik; Kono, Junichiro; Tu, Xiaomin; Zheng, Ming

2012-02-01

DNA wrapping-based ion exchange chromatography and density gradient ultracentrifugation provide nanotube samples highly enriched in single chiralities. We present resonance Raman excitation profiles for the G-band of several single chirality semiconducting and metallic species. The expected incoming and outgoing resonance peaks are observed in the profiles, but contrary to long-held assumptions, the outgoing resonance is always significantly weaker than the ingoing resonance peak. This strong asymmetry in the profiles arises from a violation of the Condon approximation [1]. Results will be discussed in the context of theoretical models that suggest significant coordinate dependence in the transition dipole (non-Condon effects). The generality of the behavior across semiconducting and metallic types, nanotube family, phonon mode, and Eii will be demonstrated. [4pt] [1] J. Duque et. al., ACS Nano, 5, 5233 (2011).

Solvent effects on polymer sorting of carbon nanotubes with applications in printed electronics.

PubMed

Wang, Huiliang; Hsieh, Bing; Jiménez-Osés, Gonzalo; Liu, Peng; Tassone, Christopher J; Diao, Ying; Lei, Ting; Houk, Kendall N; Bao, Zhenan

2015-01-07

Regioregular poly(3-alkylthiophene) (P3AT) polymers have been previously reported for the selective, high-yield dispersion of semiconducting single-walled carbon nanotubes (SWCNTs) in toluene. Here, five alternative solvents are investigated, namely, tetrahydrofuran, decalin, tetralin, m-xylene, and o-xylene, for the dispersion of SWCNTs by poly(3-dodecylthiophene) P3DDT. The dispersion yield could be increased to over 40% using decalin or o-xylene as the solvents while maintaining high selectivity towards semiconducting SWCNTs. Molecular dynamics (MD) simulations in explicit solvents are used to explain the improved sorting yield. In addition, a general mechanism is proposed to explain the selective dispersion of semiconducting SWCNTs by conjugated polymers. The possibility to perform selective sorting of semiconducting SWCNTs using various solvents provides a greater diversity of semiconducting SWCNT ink properties, such as boiling point, viscosity, and surface tension as well as toxicity. The efficacy of these new semiconducting SWCNT inks is demonstrated by using the high boiling point and high viscosity solvent tetralin for inkjet-printed transistors, where solvent properties are more compatible with the inkjet printing head and improved droplet formation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Less severe processing improves carbon nanotube photovoltaic performance

NASA Astrophysics Data System (ADS)

Shea, Matthew J.; Wang, Jialiang; Flach, Jessica T.; Zanni, Martin T.; Arnold, Michael S.

2018-05-01

Thin film semiconducting single walled carbon nanotube (s-SWCNT) photovoltaics suffer losses due to trapping and quenching of excitons by defects induced when dispersing s-SWCNTs into solution. We study these aspects by preparing photovoltaic devices from (6,5) carbon nanotubes isolated by different processes: extended ultrasonication, brief ultrasonication, and shear force mixing. Peak quantum efficiency increases from 28% to 38% to 49% as the processing harshness decreases and is attributed to both increasing s-SWCNT length and reducing sidewall defects. Fill-factor and open-circuit voltage also improve with shear force mixing, highlighting the importance of obtaining long, defect-free s-SWCNTs for efficient photoconversion devices.

Controlled, Site-Specific Functionalization of Carbon Nanotubes with Diazonium Salts

NASA Technical Reports Server (NTRS)

Tour, James M.

2013-01-01

This work uses existing technologies to prepare a crossbar architecture of nano tubes, wherein one nanotube is fixed to a substrate, and a second nanotube is suspended a finite distance above. Both nano tubes can be individually addressed electrically. Application of opposite potentials to the two tubes causes the top tube to deform and to essentially come into contact with the lower tube. Contact here refers not to actual, physical contact, but rather within an infinitesimally small distance referred to as van der Walls contact, in which the entities may influence each other on a molecular and electronic scale. First, the top tube is physically deformed, leading to a potentially higher chemical reactivity at the point of deformation, based on current understanding of the effects of curvature strain on reactivity. This feature would allow selective functionalization at the junction via reaction with diazonium salts. Secondly, higher potential is achieved at the point of "cross" between the tubes. In a pending patent application, a method is claimed for directed self-assembly of molecular components onto the surface of metal or conductive materials by application of potential to the metal or conductive surface. In another pending patent application, a method is claimed for attaching molecules to the surface of nanotubes via the use of reactive diazonium salts. In the present invention, the directed functionalization of the crossed-nanotube junctions by applying a potential to the ends of the nanotubes in the presence of reactive diazonium slats, or other reactive molecular species is claimed. The diazonium salts are directed by the potential existing at the junction to react with the surface of the nanotube, thus placing functional molecular components at the junctions. The crossed nano tubes therefore provide a method of directly addressing the functionalized molecules, which have been shown to function as molecular switches, molecular wires, and in other

Carbon nanotube active-matrix backplanes for conformal electronics and sensors.

PubMed

Takahashi, Toshitake; Takei, Kuniharu; Gillies, Andrew G; Fearing, Ronald S; Javey, Ali

2011-12-14

In this paper, we report a promising approach for fabricating large-scale flexible and stretchable electronics using a semiconductor-enriched carbon nanotube solution. Uniform semiconducting nanotube networks with superb electrical properties (mobility of ∼20 cm2 V(-1) s(-1) and ION/IOFF of ∼10(4)) are obtained on polyimide substrates. The substrate is made stretchable by laser cutting a honeycomb mesh structure, which combined with nanotube-network transistors enables highly robust conformal electronic devices with minimal device-to-device stochastic variations. The utility of this device concept is demonstrated by fabricating an active-matrix backplane (12×8 pixels, physical size of 6×4 cm2) for pressure mapping using a pressure sensitive rubber as the sensor element.

Mechanism of amperometric biosensor with electronic-type-controlled carbon nanotube

NASA Astrophysics Data System (ADS)

Hidaka, Hiroki; Nowaki, Kohei; Muguruma, Hitoshi

2016-03-01

An amperometric enzyme biosensor with electronic-type-controlled (metallic and semiconducting) single-walled carbon nanotubes (CNTs) is presented. In this research, we investigate how the electronic types of CNTs influence the amperometric response of enzyme biosensors and what their working mechanisms are. The biosensor of interest is for glucose detection using enzyme glucose oxidase (GOD). In the presence of oxygen, the response of a metallic CNT-GOD electrode was 2.5 times more sensitive than that of a semiconducting CNT-GOD electrode. In contrast, in the absence of oxygen, the response of the semiconducting CNT-GOD electrode was retained, whereas that of the metallic CNT-GOD electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting CNT-GOD electrode, whereas the metallic CNT-GOD electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. Electrochemical impedance spectroscopy was used to show that the semiconducting CNT network has less resistance for electron transfer than the metallic CNT network. The optimized glucose biosensor revealed a sensitivity of 5.6 µA mM-1 cm-2 at +0.6 V vs Ag/AgCl, a linear dynamic range of 0.025-1.4 mM, and a response time of 8 s.

Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls

NASA Astrophysics Data System (ADS)

Filippin, A. Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A.; Borras, Ana

2016-02-01

A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor.

Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls

PubMed Central

Filippin, A. Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A.; Borras, Ana

2016-01-01

A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor. PMID:26860367

Structural and electronic properties of carbon nanotube-reinforced epoxy resins.

PubMed

Suggs, Kelvin; Wang, Xiao-Qian

2010-03-01

Nanocomposites of cured epoxy resin reinforced by single-walled carbon nanotubes exhibit a plethora of interesting behaviors at the molecular level. We have employed a combination of force-field-based molecular mechanics and first-principles calculations to study the corresponding binding and charge-transfer behavior. The simulation study of various nanotube species and curing agent configurations provides insight into the optimal structures in lieu of interfacial stability. An analysis of charge distributions of the epoxy functionalized semiconducting and metallic tubes reveals distinct level hybridizations. The implications of these results for understanding dispersion mechanism and future nano reinforced composite developments are discussed.

Polymer-free carbon nanotube thermoelectrics with improved charge carrier transport and power factor

DOE PAGES

Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; ...

2016-11-17

Here, semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstratemore » that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 μW m -1K -2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.« less

Large-scale separation of single-walled carbon nanotubes by electronic type using click chemistry

NASA Astrophysics Data System (ADS)

Um, Jo-Eun; Song, Sun Gu; Yoo, Pil J.; Song, Changsik; Kim, Woo-Jae

2018-01-01

Single-walled carbon nanotubes (SWCNTs) can be either metallic or semiconducting, making their separation critical for applications in nanoelectronics, biomedical materials, and solar cells. Herein, we investigate a novel solution-phase separation method based on click chemistry (azide-alkyne Huisgen cycloaddition) and determine its efficiency and scalability. In this method, metallic SWCNTs in metallic/semiconducting SWCNT mixtures are selectively functionalized with alkyne groups by being reacted with 4-propargyloxybenezenediazonium tetrafluoroborate. Subsequently, silica nanoparticles are functionalized with azide groups and reacted with alkyne-bearing metallic SWCNTs in the SWCNT mixture in the presence of a Cu catalyst. As a result, metallic SWCNTs are anchored on silica powder, whereas non-functionalized semiconducting SWCNTs remain in solution. Low-speed centrifugation effectively removes the silica powder with attached metallic SWCNTs, furnishing a solution of highly pure semiconducting SWCNTs, as confirmed by Raman and UV-vis/near-infrared absorption measurements. This novel separation scheme exhibits the advantage of simultaneously separating both metallic and semiconducting SWCNTs from their mixtures, being cost-effective and therefore applicable at an industrial scale.

Detection of single ion channel activity with carbon nanotubes

NASA Astrophysics Data System (ADS)

Zhou, Weiwei; Wang, Yung Yu; Lim, Tae-Sun; Pham, Ted; Jain, Dheeraj; Burke, Peter J.

2015-03-01

Many processes in life are based on ion currents and membrane voltages controlled by a sophisticated and diverse family of membrane proteins (ion channels), which are comparable in size to the most advanced nanoelectronic components currently under development. Here we demonstrate an electrical assay of individual ion channel activity by measuring the dynamic opening and closing of the ion channel nanopores using single-walled carbon nanotubes (SWNTs). Two canonical dynamic ion channels (gramicidin A (gA) and alamethicin) and one static biological nanopore (α-hemolysin (α-HL)) were successfully incorporated into supported lipid bilayers (SLBs, an artificial cell membrane), which in turn were interfaced to the carbon nanotubes through a variety of polymer-cushion surface functionalization schemes. The ion channel current directly charges the quantum capacitance of a single nanotube in a network of purified semiconducting nanotubes. This work forms the foundation for a scalable, massively parallel architecture of 1d nanoelectronic devices interrogating electrophysiology at the single ion channel level.

Ambipolar behavior and thermoelectric properties of WS2 nanotubes

NASA Astrophysics Data System (ADS)

Yomogida, Yohei; Kawai, Hideki; Sugahara, Mitsunari; Okada, Ryotaro; Yanagi, Kazuhiro

WS2 nanotubes are rolled multi-walled nanotubes made by a layered material, tungsten disulfides Since the discovery by Tenne et al in 1992, various physical properties have been revealed. Theoretical studies have suggested their distinct electronic properties from those of two dimensional sheet, such as one-dimensional electronic strucutures with sharp van Hove singularities and chiralitiy depended electronic structures. Their fibril structures enable us to make their random network films, however, the films are not conducting, and thus have not been used for electronic applications. Here we demonstrate that carrier injections on the WS2 networks by an electrolyte gating approach could make the networks as a semiconducting channel. We clarified the Raman characteristics of WS2 nanotubes networks under electrolyte gating, and confirmed capability of electron and hole injections. We revealed ambipolar behaviors of the WS2 nanotube networks in field effect transistor setups with electrolyte gating. In additio, we demosntrate N-type and P-type control of thermoelectric properties of WS2 nanotubes by electrolyte gating.The power factor of the WS2 nanotubes almost approached to that of the single crystalline WS2 flakes, suggesting good potential for thermoelectric applications..

Synthesis and Electronic Transport in Single-Walled Carbon Nanotubes of Known Chirality

NASA Astrophysics Data System (ADS)

Caldwell, Robert Victor

Since their discovery in 1991, carbon nanotubes have proven to be a very interesting material for its physical strength, originating from the pure carbon lattice and strong covalent sp2 orbital bonds, and electronic properties which are derived from the lattice structure lending itself to either a metallic or semiconducting nature among its other properties. Carbon nanotubes have been researched with an eye towards industry applications ranging from use as an alloy in metals and plastics to improve physical strength of the resulting materials to uses in the semiconductor industry as either an interconnect or device layer for computer chips to chemical or biological sensors. This thesis focuses on both the synthesis of individual single-walled carbon nanotubes as well as the electrical properties of those tubes. What makes the work herein different from that of other thesis is that the research has been performed on carbon nanotubes of known chirality. Having first grown carbon nanotubes with a chemical vapor deposition growth in a quartz tube using ethanol vapor as a feedstock to grow long individual single-walled carbon nanotubes on a silicon chip that is also compatible with Rayleigh scattering spectroscopy to identify the chiral indices of the carbon nanotubes in question, those tubes were then transferred with a mechanical transfer process specially designed in our research lab onto a substrate of our choosing before an electrical device was made out of those tubes using standard electron beam lithography. The focus in this thesis is on the work that went into designing and testing this process as well as the initial results of the electronic properties of those carbon nanotubes of known chirality, such as the first known electrical measurements on single individual armchair carbon nanotubes as well as the first known electrical measurements of a single semiconducting carbon nanotube on thin hexagonal boron nitride to study the effects of the surface optical

Structural and Electronic Properties of α2-Graphyne Nanotubes: A Density Functional Theory Study

NASA Astrophysics Data System (ADS)

Majidi, Roya

2018-02-01

Another form of carbon-based two-dimensional material in the graphene family, named the α2-graphyne sheet, was predicted very recently. The α2-graphyne sheet was created by doubling each acetylenic linker in an α-graphyne sheet. It exhibited semimetallic Dirac point features similar to graphene and α-graphyne sheets. In the present work, single -walled carbon nanotubes based on an α2-graphyne sheet was introduced. The structural and electronic properties of these nanotubes were studied using density functional theory. It was found that armchair α2-graphyne nanotubes showed metallic behavior, while zigzag α2-graphyne nanotubes were found to have semiconducting or metallic properties depending on tube size. The energy band gap of zigzag α2-graphyne nanotubes decreased with increasing tube diameter. The results indicated that the α2-graphyne sheet and its nanotubes can be proper materials for future nanoelectronics.

Multi-Scale Simulations of Carbon Nanotubes: Mechanics and Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak

2003-01-01

Carbon Nanotube (CNT) is a tubular form of carbon with diameter as small as 1 nm. Length: few mn to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties; Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Graphene nanoribbons production from flat carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melo, W. S.; Guerini, S.; Diniz, E. M., E-mail: eduardo.diniz@ufma.br

2015-11-14

Graphene nanoribbons are of great interest for pure and applied sciences due to their unique properties which depend on the nanoribbon edges, as, for example, energy gap and antiferromagnetic coupling. Nevertheless, the synthesis of nanoribbons with well-defined edges remains a challenge. To collaborate with this subject, here we propose a new route for the production of graphene nanoribbons from flat carbon nanotubes filled with a one-dimensional chain of Fe atoms by first principles calculations based on density functional theory. Our results show that Fe-filled flat carbon nanotubes are energetically more stable than non flattened geometries. Also we find that bymore » hydrogenation or oxygenation of the most curved region of the Fe-filled flat armchair carbon nanotube, it occurred a spontaneous production of zigzag graphene nanoribbons which have metallic or semiconducting behavior depending on the edge and size of the graphene nanoribbon. Such findings can be used to create a new method of synthesis of regular-edge carbon nanoribbons.« less

Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes

PubMed Central

Khan, Mohammad Irfan; Tyagi, Neha; Swaroop Khare, Purnima

2014-01-01

The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). The structural stability has been analyzed in terms of minimum ground state total energy, binding, and formation energy. As an effect of Mn doping (1–4 atoms), all the GaN nanotubes taken into consideration show semiconducting to metallic transition first and after certain level of Mn doping changes its trend. PMID:24707225

Computational Nanotechnology of Materials, Devices, and Machines: Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Kwak, Dolhan (Technical Monitor)

2000-01-01

The mechanics and chemistry of carbon nanotubes have relevance for their numerous electronic applications. Mechanical deformations such as bending and twisting affect the nanotube's conductive properties, and at the same time they possess high strength and elasticity. Two principal techniques were utilized including the analysis of large scale classical molecular dynamics on a shared memory architecture machine and a quantum molecular dynamics methodology. In carbon based electronics, nanotubes are used as molecular wires with topological defects which are mediated through various means. Nanotubes can be connected to form junctions.

Resonance Raman Spectroscopy of Chirality Enriched Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Hight Walker, A. R.; Piao, Y.; Simpson, J. R.; Lindsay, M.; Streit, J. K.; Ao, G.; Zheng, M.; Fagan, J. A.

Relative intensities of resonant Raman RBM and G modes of 11 chirality-enriched SWCNT species were established under second-order excitation. Results demonstrate an under-recognized complexity in evaluation of Raman spectra for assignment of (n,m) population distributions. Strong chiral angle and mod dependencies affect the intensity ratio of RBM/G modes and can result in misleading interpretations. We report 5 new (n,m) values for chirality-dependent G+ and G- Raman peak positions and intensity ratios, extending the available data to cover smaller diameters down to (5,4). The Raman spectral library sufficiently decouples G peaks from multiple species and enables fundamental characterization in mixed chirality samples. Our results on dispersive properties of the D modes will also be discussed. Probing defects is crucial to evaluate SWCNT quality and to understand the photophysics behind defect-induced optoelectronic features. Using high-quality, chirality-enriched semiconducting SWCNTs and tunable lasers, our results show a non-dispersive D band throughout the resonant window within the same (n,m). Our results were validated by multiple (n,m) samples and intentional covalent surface functionalization generating D peaks with increased intensity, which remain non-dispersive.

Spectral function of few electrons in quantum wires and carbon nanotubes as a signature of Wigner localization

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2012-03-01

We demonstrate that the profile of the space-resolved spectral function at finite temperature provides a signature of Wigner localization for electrons in quantum wires and semiconducting carbon nanotubes. Our numerical evidence is based on the exact diagonalization of the microscopic Hamiltonian of few particles interacting in gate-defined quantum dots. The minimal temperature required to suppress residual exchange effects in the spectral function image of (nanotubes) quantum wires lies in the (sub)kelvin range.

The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

PubMed

Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

2011-05-24

Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments.

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

PubMed

Gu, Jianting; Han, Jie; Liu, Dan; Yu, Xiaoqin; Kang, Lixing; Qiu, Song; Jin, Hehua; Li, Hongbo; Li, Qingwen; Zhang, Jin

2016-09-01

For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assembly of ordered carbon shells on semiconducting nanomaterials

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2010-05-11

In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

Assembly of ordered carbon shells on semiconducting nanomaterials

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2012-10-02

In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

Optoelectronic response of a WS2 tubular p-n junction

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Onga, M.; Qin, F.; Shi, W.; Zak, A.; Tenne, R.; Smet, J.; Iwasa, Y.

2018-07-01

Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.

Fiber and fabric solar cells by directly weaving carbon nanotube yarns with CdSe nanowire-based electrodes

NASA Astrophysics Data System (ADS)

Zhang, Luhui; Shi, Enzheng; Ji, Chunyan; Li, Zhen; Li, Peixu; Shang, Yuanyuan; Li, Yibin; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai; Cao, Anyuan

2012-07-01

Electrode materials are key components for fiber solar cells, and when combined with active layers (for light absorption and charge generation) in appropriate ways, they enable design and fabrication of efficient and innovative device structures. Here, we apply carbon nanotube yarns as counter electrodes in combination with CdSe nanowire-grafted primary electrodes (Ti wire) for making fiber and fabric-shaped photoelectrochemical cells with power conversion efficiencies in the range 1% to 2.9%. The spun-twist long nanotube yarns possess both good electrical conductivity and mechanical flexibility compared to conventional metal wires or carbon fibers, which facilitate fabrication of solar cells with versatile configurations. A unique feature of our process is that instead of making individual fiber cells, we directly weave single or multiple nanotube yarns with primary electrodes into a functional fabric. Our results demonstrate promising applications of semiconducting nanowires and carbon nanotubes in woven photovoltaics.Electrode materials are key components for fiber solar cells, and when combined with active layers (for light absorption and charge generation) in appropriate ways, they enable design and fabrication of efficient and innovative device structures. Here, we apply carbon nanotube yarns as counter electrodes in combination with CdSe nanowire-grafted primary electrodes (Ti wire) for making fiber and fabric-shaped photoelectrochemical cells with power conversion efficiencies in the range 1% to 2.9%. The spun-twist long nanotube yarns possess both good electrical conductivity and mechanical flexibility compared to conventional metal wires or carbon fibers, which facilitate fabrication of solar cells with versatile configurations. A unique feature of our process is that instead of making individual fiber cells, we directly weave single or multiple nanotube yarns with primary electrodes into a functional fabric. Our results demonstrate promising applications

Dynamic current susceptibility as a probe of Majorana bound states in nanowire-based Josephson junctions

NASA Astrophysics Data System (ADS)

Trif, Mircea; Dmytruk, Olesia; Bouchiat, Hélène; Aguado, Ramón; Simon, Pascal

2018-02-01

We theoretically study a Josephson junction based on a semiconducting nanowire subject to a time-dependent flux bias. We establish a general density-matrix approach for the dynamical response of the Majorana junction and calculate the resulting flux-dependent susceptibility using both microscopic and effective low-energy descriptions for the nanowire. We find that the diagonal component of the susceptibility, associated with the dynamics of the Majorana state populations, dominates over the standard Kubo contribution for a wide range of experimentally relevant parameters. The diagonal term, explored, in this Rapid Communication, in the context of Majorana physics, allows probing accurately the presence of Majorana bound states in the junction.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

PubMed

Cao, Xuan; Cao, Yu; Zhou, Chongwu

2016-01-26

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

Single-Walled Carbon Nanotubes in Solar Cells.

PubMed

Jeon, Il; Matsuo, Yutaka; Maruyama, Shigeo

2018-01-22

Photovoltaics, more generally known as solar cells, are made from semiconducting materials that convert light into electricity. Solar cells have received much attention in recent years due to their promise as clean and efficient light-harvesting devices. Single-walled carbon nanotubes (SWNTs) could play a crucial role in these devices and have been the subject of much research, which continues to this day. SWNTs are known to outperform multi-walled carbon nanotubes (MWNTs) at low densities, because of the difference in their optical transmittance for the same current density, which is the most important parameter in comparing SWNTs and MWNTs. SWNT films show semiconducting features, which make SWNTs function as active or charge-transporting materials. This chapter, consisting of two sections, focuses on the use of SWNTs in solar cells. In the first section, we discuss SWNTs as a light harvester and charge transporter in the photoactive layer, which are reviewed chronologically to show the history of the research progress. In the second section, we discuss SWNTs as a transparent conductive layer outside of the photoactive layer, which is relatively more actively researched. This section introduces SWNT applications in silicon solar cells, organic solar cells, and perovskite solar cells each, from their prototypes to recent results. As we go along, the science and prospects of the application of solar cells will be discussed.

Room temperature spin valve effect in NiFe/WS₂/Co junctions.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

2016-02-12

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

Improving the electrical properties of carbon nanotubes with interhalogen compounds.

PubMed

Janas, Dawid; Milowska, Karolina Z; Bristowe, Paul D; Koziol, Krzysztof K K

2017-03-02

The electronic properties of carbon nanostructures such as carbon nanotubes (CNTs) or graphene can easily be tuned by the action of various doping agents. We present an experimental study and numerical analysis of how and why metallic and semiconductive CNTs can be p-doped by exposing them to two interhalogens: iodine monochloride and iodine monobromide. Simple application of these compounds was found to reduce the electrical resistance by as much as 2/3 without causing any unfavorable chemical modification, which could disrupt the highly conductive network of sp 2 carbon atoms. To gain better insight into the underlying mechanism of the observed experimental results, we provide a first principles indication of how interhalogens interact with model metallic (5,5) and semiconductive (10,0) CNTs.

Hot spot dynamics in carbon nanotube array devices.

PubMed

Engel, Michael; Steiner, Mathias; Seo, Jung-Woo T; Hersam, Mark C; Avouris, Phaedon

2015-03-11

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measurements, we observe under steady state bias conditions the emergence of time-variable, local temperature maxima with dimensions below 300 nm, and temperatures above 400 K. On the basis of time domain cross-correlation analysis, we investigate how the intensity fluctuations of the thermal radiation patterns are correlated with the overall device current. The analysis reveals the interdependence of electrical current fluctuations and time-variable hot spot formation that limits the overall device performance and, ultimately, may cause device degradation. The findings have implications for the future development of carbon nanotube-based technologies.

Photosensitive function of encapsulated dye in carbon nanotubes.

PubMed

Yanagi, Kazuhiro; Iakoubovskii, Konstantin; Matsui, Hiroyuki; Matsuzaki, Hiroyuki; Okamoto, Hiroshi; Miyata, Yasumitsu; Maniwa, Yutaka; Kazaoui, Said; Minami, Nobutsugu; Kataura, Hiromichi

2007-04-25

Single-wall carbon nanotubes (SWCNTs) exhibit resonant absorption localized in specific spectral regions. To expand the light spectrum that can be utilized by SWCNTs, we have encapsulated squarylium dye into SWCNTs and clarified its microscopic structure and photosensitizing function. X-ray diffraction and polarization-resolved optical absorption measurements revealed that the encapsulated dye molecules are located at an off center position inside the tubes and aligned to the nanotube axis. Efficient energy transfer from the encapsulated dye to SWCNTs was clearly observed in the photoluminescence spectra. Enhancement of transient absorption saturation in the S1 state of the semiconducting SWCNTs was detected after the photoexcitation of the encapsulated dye, which indicates that ultrafast (<190 fs) energy transfer occurred from the dye to the SWCNTs.

Physically unclonable cryptographic primitives using self-assembled carbon nanotubes.

PubMed

Hu, Zhaoying; Comeras, Jose Miguel M Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S; Hannon, James B; Liehr, Michael; Han, Shu-Jen

2016-06-01

Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

Physically unclonable cryptographic primitives using self-assembled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hu, Zhaoying; Comeras, Jose Miguel M. Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S.; Hannon, James B.; Liehr, Michael; Han, Shu-Jen

2016-06-01

Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers.

PubMed

He, Yujun; Zhang, Jin; Li, Dongqi; Wang, Jiangtao; Wu, Qiong; Wei, Yang; Zhang, Lina; Wang, Jiaping; Liu, Peng; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

2013-01-01

We show that the Schottky barrier at the metal-single walled carbon nanotube (SWCNT) contact can be clearly observed in scanning electron microscopy (SEM) images as a bright contrast segment with length up to micrometers due to the space charge distribution in the depletion region. The lengths of the charge depletion increase with the diameters of semiconducting SWCNTs (s-SWCNTs) when connected to one metal electrode, which enables direct and efficient evaluation of the bandgap distributions of s-SWCNTs. Moreover, this approach can also be applied for a wide variety of semiconducting nanomaterials, adding a new function to conventional SEM.

Thermionic refrigeration at CNT-CNT junctions

NASA Astrophysics Data System (ADS)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Effect of UV irradiation on the dynamics of oxygen and water interaction with carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nelson, Anthony J; Ivanov, Ilia N

2016-01-01

Carbon nanotube (CNT) films composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O2 and H2O vapor in the dark and under UV irradiation. Changes in the film conductivity and mass were measured in situ. We find that UV irradiation increases the resistive response of CNT films to O2 and H2O by more than an order of magnitude. In m-SWNT and MWNT films, UV irradiation changes the sign of the resistive response to O2 and H2O by generating free charge carriers. S-SWNTs show the largest UV-induced resistive response and exhibitmore » weakening of van der Waals interactions with the QCM crystal when exposed to gas/vapor.« less

Sorting of Semiconducting Single-Walled Carbon Nanotubes in Polar Solvents with an Amphiphilic Conjugated Polymer Provides General Guidelines for Enrichment.

PubMed

Ouyang, Jianying; Ding, Jianfu; Lefebvre, Jacques; Li, Zhao; Guo, Chang; Kell, Arnold J; Malenfant, Patrick R L

2018-02-27

Conjugated polymer extraction (CPE) has been shown to be a highly effective method to isolate high-purity semiconducting single-walled carbon nanotubes (sc-SWCNTs). In both literature reports and industrial manufacturing, this method has enabled enrichment of sc-SWCNTs with high purity (≥99.9%). High selectivity is typically obtained in nonpolar aromatic solvents, yet polar solvents may provide process improvements in terms of yield, purity and efficiency. Using an amphiphilic fluorene-alt-pyridine conjugated copolymer with hydrophilic side chains, we have investigated the enrichment of sc-SWCNTs in polar solvents. Various conditions such as polymer/SWCNT ratio, solvent polarity, solvent dielectric constant as well as polymer solubility and SWCNT dispersibility were explored in order to optimize the purity and yield of the enriched product. Herein, we provide insights on CPE by demonstrating that a conjugated polymer having a hydrophobic backbone and hydrophilic oligo(ethylene oxide) side chains provides near full recovery (95%) of sc-SWCNTs using a multiextraction protocol. High purity is also obtained, and differences in chiral selectivity compared to analogous hydrophobic systems were confirmed by optical absorption and Raman spectroscopy as well as photoluminescence excitation mapping. Taking into consideration the solvent dielectric constant, polarity index as well as polymer solubility and SWCNT dispersibility provides a better understanding of structure-property effects on sc-SWCNT enrichment. The resulting hydrophilic SWCNT dispersions demonstrate long-term colloidal stability, making them suitable for ink formulation and high-performance thin-film transistors fabrication.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

PubMed

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Membrane nanotubes facilitate long-distance interactions between natural killer cells and target cells

PubMed Central

Chauveau, Anne; Aucher, Anne; Eissmann, Philipp; Vivier, Eric; Davis, Daniel M.

2010-01-01

Membrane nanotubes are membranous tethers that physically link cell bodies over long distances. Here, we present evidence that nanotubes allow human natural killer (NK) cells to interact functionally with target cells over long distances. Nanotubes were formed when NK cells contacted target cells and moved apart. The frequency of nanotube formation was dependent on the number of receptor/ligand interactions and increased on NK cell activation. Most importantly, NK cell nanotubes contained a submicron scale junction where proteins accumulated, including DAP10, the signaling adaptor that associates with the activating receptor NKG2D, and MHC class I chain-related protein A (MICA), a cognate ligand for NKG2D, as occurs at close intercellular synapses between NK cells and target cells. Quantitative live-cell fluorescence imaging suggested that MICA accumulated at small nanotube synapses in sufficient numbers to trigger cell activation. In addition, tyrosine-phosphorylated proteins and Vav-1 accumulated at such junctions. Functionally, nanotubes could aid the lysis of distant target cells either directly or by moving target cells along the nanotube path into close contact for lysis via a conventional immune synapse. Target cells moving along the nanotube path were commonly polarized such that their uropods faced the direction of movement. This is the opposite polarization than for normal cell migration, implying that nanotubes can specifically drive target cell movement. Finally, target cells that remained connected to an NK cell by a nanotube were frequently lysed, whereas removing the nanotube using a micromanipulator reduced lysis of these target cells. PMID:20212116

Method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, J.

1979-10-01

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Resonance Raman signature of intertube excitons in compositionally-defined carbon nanotube bundles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simpson, Jeffrey R.; Roslyak, Oleksiy; Duque, Juan G.

Electronic interactions in low-dimensional nanomaterial heterostructures can lead to novel optical responses arising from exciton delocalization over the constituent materials. Similar phenomena have been suggested to arise between closely interacting semiconducting carbon nanotubes of identical structure. Such behavior in carbon nanotubes has potential to generate new exciton physics, impact exciton transport mechanisms in nanotube networks, and place nanotubes as one-dimensional models for such behaviors in systems of higher dimensionality. Here we use resonance Raman spectroscopy to probe intertube interactions in (6,5) chirality-enriched bundles. Raman excitation profiles for the radial breathing mode and G-mode display a previously unobserved sharp resonance feature.more » We show the feature is evidence for creation of intertube excitons and is identified as a Fano resonance arising from the interaction between intratube and intertube excitons. The universality of the model suggests that similar Raman excitation profile features may be observed for interlayer exciton resonances in 2D multilayered systems.« less

Resonance Raman signature of intertube excitons in compositionally-defined carbon nanotube bundles

DOE PAGES

Simpson, Jeffrey R.; Roslyak, Oleksiy; Duque, Juan G.; ...

2018-02-12

Electronic interactions in low-dimensional nanomaterial heterostructures can lead to novel optical responses arising from exciton delocalization over the constituent materials. Similar phenomena have been suggested to arise between closely interacting semiconducting carbon nanotubes of identical structure. Such behavior in carbon nanotubes has potential to generate new exciton physics, impact exciton transport mechanisms in nanotube networks, and place nanotubes as one-dimensional models for such behaviors in systems of higher dimensionality. Here we use resonance Raman spectroscopy to probe intertube interactions in (6,5) chirality-enriched bundles. Raman excitation profiles for the radial breathing mode and G-mode display a previously unobserved sharp resonance feature.more » We show the feature is evidence for creation of intertube excitons and is identified as a Fano resonance arising from the interaction between intratube and intertube excitons. The universality of the model suggests that similar Raman excitation profile features may be observed for interlayer exciton resonances in 2D multilayered systems.« less

Resonance Raman signature of intertube excitons in compositionally-defined carbon nanotube bundles.

PubMed

Simpson, Jeffrey R; Roslyak, Oleksiy; Duque, Juan G; Hároz, Erik H; Crochet, Jared J; Telg, Hagen; Piryatinski, Andrei; Walker, Angela R Hight; Doorn, Stephen K

2018-02-12

Electronic interactions in low-dimensional nanomaterial heterostructures can lead to novel optical responses arising from exciton delocalization over the constituent materials. Similar phenomena have been suggested to arise between closely interacting semiconducting carbon nanotubes of identical structure. Such behavior in carbon nanotubes has potential to generate new exciton physics, impact exciton transport mechanisms in nanotube networks, and place nanotubes as one-dimensional models for such behaviors in systems of higher dimensionality. Here we use resonance Raman spectroscopy to probe intertube interactions in (6,5) chirality-enriched bundles. Raman excitation profiles for the radial breathing mode and G-mode display a previously unobserved sharp resonance feature. We show the feature is evidence for creation of intertube excitons and is identified as a Fano resonance arising from the interaction between intratube and intertube excitons. The universality of the model suggests that similar Raman excitation profile features may be observed for interlayer exciton resonances in 2D multilayered systems.

Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

DTIC Science & Technology

2007-03-01

COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Lonnie Carlson, Major...DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Presented to the Faculty Department of Engineering Physics Graduate School...DISTRIBUTION UNLIMITED AFIT/GNE/ENP/07-01 COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE Lonnie

Rare-earth metal halogenide encapsulation-induced modifications in Raman spectra of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Kharlamova, M. V.

2015-01-01

In the present work, a detailed Raman spectroscopy investigation on the single-walled carbon nanotubes (SWCNTs) filled with praseodymium chloride, terbium chloride and thulium chloride was performed. The salts were incorporated inside the SWCNTs by a capillary filling method using melts, and the high-resolution transmission electron microscopy data proved the high filling degree of the nanotube channels. A thorough analysis of the radial breathing mode and G-band of the Raman spectra of the pristine and filled SWCNTs showed that the encapsulated salts cause acceptor doping of the host nanotubes, and the doping efficiency depends on the compound. The incorporated thulium chloride has the strongest doping effect on the SWCNTs, whereas praseodymium chloride has the weakest effect. It was found that the encapsulated salts modify more significantly the electronic structure of metallic nanotubes than semiconducting SWCNTs.

Exploring the ring current of carbon nanotubes by first-principles calculations.

PubMed

Ren, Pengju; Zheng, Anmin; Xiao, Jianping; Pan, Xiulian; Bao, Xinhe

2015-02-01

Ring current is a fundamental concept to understand the nuclear magnetic resonance (NMR) properties and aromaticity for conjugated systems, such as carbon nanotubes (CNTs). Employing the recently developed gauge including projector augmented wave (GIPAW) method, we studied the ring currents of CNTs systematically and visualized their distribution. The ring current patterns are determined by the semiconducting or metallic properties of CNTs. The discrepancy is mainly caused by the axial component of external magnetic fields, whereas the radial component induced ring currents are almost independent of the electronic structures of CNTs, where the intensities of the ring currents are linearly related to the diameters of the CNTs. Although the ring currents induced by the radial component are more intense than those by the axial component, only the latter determines the overall NMR responses and aromaticity of the CNTs as well. Furthermore, the semiconducting CNTs are more aromatic than their metallic counterparts due to the existence of delocalized ring currents on the semiconducting CNTs. These fundamental features are of vital importance for the development of CNT-based nanoelectronics and applications in magnetic fields.

Exploring the ring current of carbon nanotubes by first-principles calculations

PubMed Central

Ren, Pengju; Zheng, Anmin; Xiao, Jianping; Pan, Xiulian

2015-01-01

Ring current is a fundamental concept to understand the nuclear magnetic resonance (NMR) properties and aromaticity for conjugated systems, such as carbon nanotubes (CNTs). Employing the recently developed gauge including projector augmented wave (GIPAW) method, we studied the ring currents of CNTs systematically and visualized their distribution. The ring current patterns are determined by the semiconducting or metallic properties of CNTs. The discrepancy is mainly caused by the axial component of external magnetic fields, whereas the radial component induced ring currents are almost independent of the electronic structures of CNTs, where the intensities of the ring currents are linearly related to the diameters of the CNTs. Although the ring currents induced by the radial component are more intense than those by the axial component, only the latter determines the overall NMR responses and aromaticity of the CNTs as well. Furthermore, the semiconducting CNTs are more aromatic than their metallic counterparts due to the existence of delocalized ring currents on the semiconducting CNTs. These fundamental features are of vital importance for the development of CNT-based nanoelectronics and applications in magnetic fields. PMID:29560175

Nanoprobe studies: Electrical transport in carbon nanotubes and crystal structure of aluminum nitride surfaces

NASA Astrophysics Data System (ADS)

Biswas, Sujit Kumar

Nanoprobes are an extraordinary set of experimental tools that allow fabrication, manipulation, and measurement in nano-scale systems. The primary use of a nanoprobe for imaging tiny objects is supplemented by powerful electrical techniques, namely scanning surface potential microscopy and current sensing atomic force microscopy. They allow us to measure potential, and current in carbon nanotube circuits. Nanoprobes are superior to conventional two- or four-probe measurements because they can provide spatial information of local electronic properties. This makes them highly attractive in studying junctions and contacts with carbon nanotubes. We have studied single-walled carbon nanotube circuits, forming junctions to other nanotubes. The experimental results indicate that these junctions act like potential barriers of about 50 meV that can confine electrons with an effective mass of 0.003 me , within nanotube channels of length 0.5 mum lying in-between two such potential barriers. This leads to quantization of the channel, forming a resonant tunneling structure. We have also found that single-walled nanotubes have phase coherence lengths of the order of 1 mum. This leads to situations where the electron interference effects at scattering centers need to be considered. We have seen direct evidence of this, in the non-linear resistance increase within nanotubes with few defects. Ambipolar transistor behavior was measured in a p-type single-walled nanotube circuit that showed electron injection across the Schottky junction at high positive bias. We have also studied multi-walled carbon nanotube circuits using scanning potential microscopy, and found that a back gate potential can vary the resistance of the channel. Vertical nanotube arrays, suitable for interconnects, were also measured. These hollow multi-walled nanotube channels were about 45 nm in diameter, and 50 mum in length, fabricated in an anodized alumina template. We found that these structures could

Probing Photosensitization by Functionalized Carbon Nanotubes.

PubMed

Chen, Chia-Ying; Zepp, Richard G

2015-12-01

Carbon nanotubes (CNTs) photosensitize the production of reactive oxygen species that may damage organisms by biomembrane oxidation or mediate environmental transformations of CNTs. Photosensitization by derivatized carbon nanotubes from various synthetic methods, and thus with different intrinsic characteristics (e.g., diameter and electronic properties), has been investigated under environmentally relevant aquatic conditions. We used the CNT-sensitized photoisomerization of sorbic acid ((2E,4E)-hexa-2,4-dienoic acid) and singlet oxygen formation to quantify the triplet states ((3)CNT*) formed upon irradiation of selected single-walled carbon nanotubes (SWCNTs) and multiwalled carbon nanotubes (MWCNTs). The CNTs used in our studies were derivatized by carboxyl groups to facilitate their dispersion in water. Results indicate that high-defect-density (thus well-stabilized), small-diameter, and semiconducting-rich CNTs have higher-measured excited triplet state formation and therefore singlet oxygen ((1)O2) yield. Derivatized SWCNTs were significantly more photoreactive than derivatized MWCNTs. Moreover, addition of sodium chloride resulted in increased aggregation and small increases in (1)O2 production of CNTs. The most photoreactive CNTs exhibited comparable photoreactivity (in terms of (3)CNT* formation and (1)O2 yield) to reference natural organic matter (NOM) under sunlight irradiation with the same mass-based concentration. Selected reference NOM could therefore be useful in evaluating environmental photoreactivity or intended antibacterial applications of CNTs.

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE PAGES

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.; ...

2016-11-09

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Intercellular nanotubes: insights from imaging studies and beyond

PubMed Central

Hurtig, Johan; Chiu, Daniel T.; Önfelt, Björn

2017-01-01

Cell-cell communication is critical to the development, maintenance, and function of multicellular organisms. Classical mechanisms for intercellular communication include secretion of molecules into the extracellular space and transport of small molecules through gap junctions. Recent reports suggest that cells also can communicate over long distances via a network of transient intercellular nanotubes. Such nanotubes have been shown to mediate intercellular transfer of organelles as well as membrane components and cytoplasmic molecules. Moreover, intercellular nanotubes have been observed in vivo and have been shown to enhance the transmission of pathogens such as human immunodeficiency virus (HIV)-1 and prions in vitro. These studies indicate that intercellular nanotubes may play a role both in normal physiology and in disease. PMID:20166114

Probing Phonon Dynamics in Individual Single-Walled Carbon Nanotubes.

PubMed

Jiang, Tao; Hong, Hao; Liu, Can; Liu, Wei-Tao; Liu, Kaihui; Wu, Shiwei

2018-04-11

Interactions between elementary excitations, such as carriers, phonons, and plasmons, are critical for understanding the optical and electronic properties of materials. The significance of these interactions is more prominent in low-dimensional materials and can dominate their physical properties due to the enhanced interactions between these excitations. One-dimensional single-walled carbon nanotubes provide an ideal system for studying such interactions due to their perfect physical structures and rich electronic properties. Here we investigated G-mode phonon dynamics in individual suspended chirality-resolved single-walled carbon nanotubes by time-resolved anti-Stokes Raman spectroscopy. The improved technique allowed us to probe the intrinsic phonon information on a single-tube level and exclude the influences of tube-tube and tube-substrate interactions. We found that the G-mode phonon lifetime ranges from 0.75-2.25 ps and critically depends on whether the tube is metallic or semiconducting. In comparison with the phonon lifetimes in graphene and graphite, we revealed structure-dependent carrier-phonon and phonon-phonon interactions in nanotubes. Our results provide new information for optimizing the design of nanotube electronic/optoelectronic devices by better understanding and utilizing their phonon decay channels.

Facile and template-free method toward chemical synthesis of polyaniline film/nanotube structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zhu, Yisi; Torres, Jorge

A facile and template-free method is reported to synthesize a new thin film structure: polyaniline (PANI) film/nanotubes (F/N) structure. The PANI F/N is a 100-nm thick PANI film embedded with PANI nanotubes. This well-controlled method requires no surfactant or organic acid as well as relatively low concentration of reagents. Synthesis condition studies reveal that aniline oligomers with certain structures are responsible for guiding the growth of the nanotubes. Electrical characterization also indicates that the PANI F/N possesses similar field-effect transistor characteristics to bare PANI film. With its 20% increased surface-area-to-volume (S/V) ratio contributed by surface embedded nanotubes and the excellentmore » p-type semiconducting characteristic, PANI F/N shows clear superiority compared with bare PANI film. Such advantages guarantee the PANI F/N a promising future toward the development of ultra-high sensitivity and low-cost biosensors.« less

Modeling of Branched (L, T and Y) Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Han, Jie; Jaffe, Richard; Saini, Subhash (Technical Monitor)

1998-01-01

Models for connecting two or three carbon nanotubes (CNT) using topological defects (i.e., pentagons and heptagons) are presented for the characterization of experimentally observed L, T and Y CNT junctions. The effects of the separation and orientation of the topological defects on the structures and energetics of these junctions are investigated using the nonlocal density function theory (DFT) and semi-empirical molecular orbital (AM1) calculations, and the Brenner empirical potential molecular mechanics simulations. The potential applications of L, Y and T CNT junctions in nanoelectronic devices are also discussed.

Filling of single-walled carbon nanotubes by CuI nanocrystals via capillary technique

NASA Astrophysics Data System (ADS)

Chernysheva, M. V.; Eliseev, A. A.; Lukashin, A. V.; Tretyakov, Yu. D.; Savilov, S. V.; Kiselev, N. A.; Zhigalina, O. M.; Kumskov, A. S.; Krestinin, A. V.; Hutchison, J. L.

2007-03-01

The present study is focused on the synthesis and investigation of the nanocomposite CuI@SWNT obtained by the filling of metallic single-walled carbon nanotubes (SWNTs) (inner diameter 1-1.4 nm) by wide-gap semiconducting CuI nanocrystals using so-called capillary technique. The method is based on the impregnation of pre-opened SWNTs by molten CuI in vacuum with subsequent slow cooling to room temperature. SWNTs and CuI@SWNT nanocomposites were studied by nitrogen capillary adsorption method, EDX microanalysis, HRTEM microscopy and Raman spectroscopy. The changing of electronic properties of CuI@SWNT as compare to row nanotubes was observed.

Room temperature spin valve effect in NiFe/WS2/Co junctions

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

2016-01-01

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes. PMID:26868638

Electronically type-sorted carbon nanotube-based electrochemical biosensors with glucose oxidase and dehydrogenase.

PubMed

Muguruma, Hitoshi; Hoshino, Tatsuya; Nowaki, Kohei

2015-01-14

An electrochemical enzyme biosensor with electronically type-sorted (metallic and semiconducting) single-walled carbon nanotubes (SWNTs) for use in aqueous media is presented. This research investigates how the electronic types of SWNTs influence the amperometric response of enzyme biosensors. To conduct a clear evaluation, a simple layer-by-layer process based on a plasma-polymerized nano thin film (PPF) was adopted because a PPF is an inactive matrix that can form a well-defined nanostructure composed of SWNTs and enzyme. For a biosensor with the glucose oxidase (GOx) enzyme in the presence of oxygen, the response of a metallic SWNT-GOx electrode was 2 times larger than that of a semiconducting SWNT-GOx electrode. In contrast, in the absence of oxygen, the response of the semiconducting SWNT-GOx electrode was retained, whereas that of the metallic SWNT-GOx electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting SWNT-GOx electrode, whereas the metallic SWNT-GOx electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. For a biosensor with the glucose dehydrogenase (GDH; oxygen-independent catalysis) enzyme, the response of the semiconducting SWNT-GDH electrode was 4 times larger than that of the metallic SWNT-GDH electrode. Electrochemical impedance spectroscopy was used to show that the semiconducting SWNT network has less resistance for electron transfer than the metallic SWNT network. Therefore, it was concluded that semiconducting SWNTs are more suitable than metallic SWNTs for electrochemical enzyme biosensors in terms of direct electron transfer as a detection mechanism. This study makes a valuable contribution toward the development of electrochemical biosensors that employ sorted SWNTs and various enzymes.

Chemically Doped Double-Walled Carbon Nanotubes: Cylindrical Molecular Capacitors

NASA Astrophysics Data System (ADS)

Chen, Gugang; Bandow, S.; Margine, E. R.; Nisoli, C.; Kolmogorov, A. N.; Crespi, Vincent H.; Gupta, R.; Sumanasekera, G. U.; Iijima, S.; Eklund, P. C.

2003-06-01

A double-walled carbon nanotube is used to study the radial charge distribution on the positive inner electrode of a cylindrical molecular capacitor. The outer electrode is a shell of bromine anions. Resonant Raman scattering from phonons on each carbon shell reveals the radial charge distribution. A self-consistent tight-binding model confirms the observed molecular Faraday cage effect, i.e., most of the charge resides on the outer wall, even when this wall was originally semiconducting and the inner wall was metallic.

Chemically doped double-walled carbon nanotubes: cylindrical molecular capacitors.

PubMed

Chen, Gugang; Bandow, S; Margine, E R; Nisoli, C; Kolmogorov, A N; Crespi, Vincent H; Gupta, R; Sumanasekera, G U; Iijima, S; Eklund, P C

2003-06-27

A double-walled carbon nanotube is used to study the radial charge distribution on the positive inner electrode of a cylindrical molecular capacitor. The outer electrode is a shell of bromine anions. Resonant Raman scattering from phonons on each carbon shell reveals the radial charge distribution. A self-consistent tight-binding model confirms the observed molecular Faraday cage effect, i.e., most of the charge resides on the outer wall, even when this wall was originally semiconducting and the inner wall was metallic.

Arrays of horizontal carbon nanotubes of controlled chirality grown using designed catalysts

NASA Astrophysics Data System (ADS)

Zhang, Shuchen; Kang, Lixing; Wang, Xiao; Tong, Lianming; Yang, Liangwei; Wang, Zequn; Qi, Kuo; Deng, Shibin; Li, Qingwen; Bai, Xuedong; Ding, Feng; Zhang, Jin

2017-02-01

The semiconductor industry is increasingly of the view that Moore’s law—which predicts the biennial doubling of the number of transistors per microprocessor chip—is nearing its end. Consequently, the pursuit of alternative semiconducting materials for nanoelectronic devices, including single-walled carbon nanotubes (SWNTs), continues. Arrays of horizontal nanotubes are particularly appealing for technological applications because they optimize current output. However, the direct growth of horizontal SWNT arrays with controlled chirality, that would enable the arrays to be adapted for a wider range of applications and ensure the uniformity of the fabricated devices, has not yet been achieved. Here we show that horizontal SWNT arrays with predicted chirality can be grown from the surfaces of solid carbide catalysts by controlling the symmetries of the active catalyst surface. We obtained horizontally aligned metallic SWNT arrays with an average density of more than 20 tubes per micrometre in which 90 per cent of the tubes had chiral indices of (12, 6), and semiconducting SWNT arrays with an average density of more than 10 tubes per micrometre in which 80 per cent of the nanotubes had chiral indices of (8, 4). The nanotubes were grown using uniform size Mo2C and WC solid catalysts. Thermodynamically, the SWNT was selectively nucleated by matching its structural symmetry and diameter with those of the catalyst. We grew nanotubes with chiral indices of (2m, m) (where m is a positive integer), the yield of which could be increased by raising the concentration of carbon to maximize the kinetic growth rate in the chemical vapour deposition process. Compared to previously reported methods, such as cloning, seeding and specific-structure-matching growth, our strategy of controlling the thermodynamics and kinetics offers more degrees of freedom, enabling the chirality of as-grown SWNTs in an array to be tuned, and can also be used to predict the growth conditions

Photoluminescence Imaging of Polyfluorene Surface Structures on Semiconducting Carbon Nanotubes: Implications for Thin Film Exciton Transport.

PubMed

Hartmann, Nicolai F; Pramanik, Rajib; Dowgiallo, Anne-Marie; Ihly, Rachelle; Blackburn, Jeffrey L; Doorn, Stephen K

2016-12-27

Single-walled carbon nanotubes (SWCNTs) have potential to act as light-harvesting elements in thin film photovoltaic devices, but performance is in part limited by the efficiency of exciton diffusion processes within the films. Factors contributing to exciton transport can include film morphology encompassing nanotube orientation, connectivity, and interaction geometry. Such factors are often defined by nanotube surface structures that are not yet well understood. Here, we present the results of a combined pump-probe and photoluminescence imaging study of polyfluorene (PFO)-wrapped (6,5) and (7,5) SWCNTs that provide additional insight into the role played by polymer structures in defining exciton transport. Pump-probe measurements suggest exciton transport occurs over larger length scales in films composed of PFO-wrapped (7,5) SWCNTs, compared to those prepared from PFO-bpy-wrapped (6,5) SWCNTs. To explore the role the difference in polymer structure may play as a possible origin of differing transport behaviors, we performed a photoluminescence imaging study of individual polymer-wrapped (6,5) and (7,5) SWCNTs. The PFO-bpy-wrapped (6,5) SWCNTs showed more uniform intensity distributions along their lengths, in contrast to the PFO-wrapped (7,5) SWCNTs, which showed irregular, discontinuous intensity distributions. These differences likely originate from differences in surface coverage and suggest the PFO wrapping on (7,5) nanotubes produces a more open surface structure than is available with the PFO-bpy wrapping of (6,5) nanotubes. The open structure likely leads to improved intertube coupling that enhances exciton transport within the (7,5) films, consistent with the results of our pump-probe measurements.

Laser method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, Jagdish

1981-01-01

This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2008-10-01

By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius.

Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes

PubMed Central

Chen, Mao-Lin; Wang, Bing-Wei; Tang, Dai-Ming; Jin, Qun; Guo, Qing-Xun; Zhang, Ding-Dong; Du, Jin-Hong; Tai, Kai-Ping; Tan, Jun; Kauppinen, Esko I.

2018-01-01

Single-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, and excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence of aggregated bundles of SWCNTs, leads to a degraded optoelectronic performance of the films. We report a network of isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed SWCNTs are welded together by graphitic carbon. Pristine SWCNT films show a record low sheet resistance of 41 ohm □−1 at 90% transmittance for 550-nm light. After HNO3 treatment, the sheet resistance further decreases to 25 ohm □−1. Organic light-emitting diodes using this SWCNT film as anodes demonstrate a low turn-on voltage of 2.5 V, a high current efficiency of 75 cd A−1, and excellent flexibility. Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. Our work provides a new avenue of assembling individual SWCNTs into macroscopic thin films, which demonstrate great potential for use as transparent electrodes in various flexible electronics. PMID:29736413

Photoluminescence Imaging of Polyfluorene Surface Structures on Semiconducting Carbon Nanotubes: Implications for Thin Film Exciton Transport

DOE PAGES

Hartmann, Nicolai F.; Pramanik, Rajib; Dowgiallo, Anne-Marie; ...

2016-12-06

Single-walled carbon nanotubes (SWCNTs) have potential to act as light-harvesting elements in thin film photovoltaic devices, but performance is in part limited by the efficiency of exciton diffusion processes within the films. Factors contributing to exciton transport can include film morphology encompassing nanotube orientation, connectivity, and interaction geometry. Such factors are often defined by nanotube surface structures that are not yet well understood. We present the results of a combined pump-probe and photoluminescence imaging study of polyfluorene (PFO)-wrapped (6,5) and (7,5) SWCNTs that provide additional insight into the role played by polymer structures in defining exciton transport. The pump-probe measurementsmore » suggest exciton transport occurs over larger length scales in films composed of PFO-wrapped (7,5) SWCNTs, compared to those prepared from PFO-bpy-wrapped (6,5) SWCNTs. To explore the role the difference in polymer structure may play as a possible origin of differing transport behaviors, we performed a photoluminescence imaging study of individual polymer-wrapped (6,5) and (7,5) SWCNTs. The PFO-bpy-wrapped (6,5) SWCNTs showed more uniform intensity distributions along their lengths, in contrast to the PFO-wrapped (7,5) SWCNTs, which showed irregular, discontinuous intensity distributions. These differences likely originate from differences in surface coverage and suggest the PFO wrapping on (7,5) nanotubes produces a more open surface structure than is available with the PFO-bpy wrapping of (6,5) nanotubes. Furthermore, the open structure likely leads to improved intertube coupling that enhances exciton transport within the (7,5) films, consistent with the results of our pump-probe measurements.« less

Photoluminescence Imaging of Polyfluorene Surface Structures on Semiconducting Carbon Nanotubes: Implications for Thin Film Exciton Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartmann, Nicolai F.; Pramanik, Rajib; Dowgiallo, Anne-Marie

Single-walled carbon nanotubes (SWCNTs) have potential to act as light-harvesting elements in thin film photovoltaic devices, but performance is in part limited by the efficiency of exciton diffusion processes within the films. Factors contributing to exciton transport can include film morphology encompassing nanotube orientation, connectivity, and interaction geometry. Such factors are often defined by nanotube surface structures that are not yet well understood. We present the results of a combined pump-probe and photoluminescence imaging study of polyfluorene (PFO)-wrapped (6,5) and (7,5) SWCNTs that provide additional insight into the role played by polymer structures in defining exciton transport. The pump-probe measurementsmore » suggest exciton transport occurs over larger length scales in films composed of PFO-wrapped (7,5) SWCNTs, compared to those prepared from PFO-bpy-wrapped (6,5) SWCNTs. To explore the role the difference in polymer structure may play as a possible origin of differing transport behaviors, we performed a photoluminescence imaging study of individual polymer-wrapped (6,5) and (7,5) SWCNTs. The PFO-bpy-wrapped (6,5) SWCNTs showed more uniform intensity distributions along their lengths, in contrast to the PFO-wrapped (7,5) SWCNTs, which showed irregular, discontinuous intensity distributions. These differences likely originate from differences in surface coverage and suggest the PFO wrapping on (7,5) nanotubes produces a more open surface structure than is available with the PFO-bpy wrapping of (6,5) nanotubes. Furthermore, the open structure likely leads to improved intertube coupling that enhances exciton transport within the (7,5) films, consistent with the results of our pump-probe measurements.« less

Effect of interleaved Si layer on the magnetotransport and semiconducting properties of n-Si/Fe Schottky junctions

NASA Astrophysics Data System (ADS)

Das, Sudhansu Sekhar; Kumar, M. Senthil

2017-12-01

Heterostructure films of the form n-Si/Si(tSi)/Fe(800 Å) were prepared by DC magnetron sputtering. In these films, the Si and Fe (800 Å) films were deposited onto n-Si(100) substrates. Substrates with different doping concentration ND were used. The thickness tSi of the interleaved Si layer is varied. For tSi = 0, the heterostructures form n-Si/Fe Schottky junctions. Structural studies on the samples as performed through XRD indicate the polycrystalline nature of the films. The magnetization data showed that the samples have in-plane easy axis of magnetization. The coercivity of the samples is of the order of 90 Oe. The I-V measurements on the samples showed nonlinear behavior. The diode ideality factor η = 2.6 is observed for the junction with ND = 1018 cm-3. The leakage current I0 increases with the increase of ND. Magnetic field has less effect on the electrical properties of the junctions. A positive magnetoresistance in the range 1 - 10 % was observed for the Si/Fe Schottky junctions in the presence of magnetic field of strength 2 T. The origin of the MR is analyzed using a model where the ratio of the currents across the junctions with and without the applied magnetic field, IH=2T/IH=0 is studied as a function of the bias voltage Vbias. The ratio IH=2T/IH=0 shows a decreasing trend with the Vbias, suggesting that the contribution to the MR in our n-Si/Fe Schottky junctions due to the spin dependent scattering is very less as compared to that due to the suppression of the impact ionization process.

Nanomanipulation and Lithography for Carbon Nanotube Based Nondestructive Evaluation Sensor Development

NASA Technical Reports Server (NTRS)

Wincheski, Buzz; Smits, Jan; Namkung, Min; Ingram, JoAnne; Watkins, Neal; Jordan, Jeffrey D.; Louie, Richard

2002-01-01

Carbon nanotubes (CNTs) offer great potential for advanced sensor development due to the unique electronic transport properties of the material. However, a significant obstacle to the realization of practical CNT devices is the formation of reliable and reproducible CNT to metallic contacts. In this work, scanning probe techniques are explored for both fabrication of metallic junctions and positioning of singlewalled CNTs across these junctions. The use of a haptic force feedback interface to a scanning probe microscope is used to enable movement of nanotubes over micron length scales with nanometer precision. In this case, imaging of the surface is performed with light or intermittent contact to the surface. Increased tip-to-sample interaction forces are then applied to either create junctions or position CNTs. The effect of functionalization of substrate surfaces on the movement and tribology of the materials is also studied. The application of these techniques to the fabrication of CNT-based sensors for nondestructive evaluation applications is discussed.

Towards Lego Snapping; Integration of Carbon Nanotubes and Few-Layer Graphene

NASA Astrophysics Data System (ADS)

Nasseri, Mohsen; Boland, Mathias; Farrokhi, M. Javad; Strachan, Douglas

Integration of semiconducting, conducting, and insulating nanomaterials into precisely aligned complicated systems is one of the main challenges to the ultimate size scaling of electronic devices, which is a key goal in nanoscience and nanotechnology. This integration could be made more effective through controlled alignment of the crystallographic lattices of the nanoscale components. Of the vast number of materials of atomically-thin materials, two of the sp2 bonded carbon structures, graphene and carbon nanotubes, are ideal candidates for this type of application since they are built from the same backbone carbon lattice. Here we report carbon nanotube and graphene hybrid nanostructures fabricated through their catalytic synthesis and etching. The growth formations we have investigated through various high-resolution microscopy techniques provide evidence of lego-snapped interfaces between nanotubes and graphene into device-relevant orientations. We will finish with a discussion of the various size and energy regimes relevant to these lego-snapped interfaces and their implications on developing these integrated formations.

Electric field-assisted deposition of nanowires on carbon nanotubes for nanoelectronics and sensor applications.

PubMed

Sivakumar, Kousik; Panchapakesan, Balaji

2005-02-01

Manipulation and control of matter at the nanoscale and atomic scale levels are crucial for the success of nanoscale sensors and actuators. The ability to control and synthesize multilayer structures using carbon nanotubes that will enable the building of electronic devices within a nanotube is still in its infancy. In this paper, we present results on selective electric field-assisted deposition of metals on carbon nanotubes realizing metallic nanowire structures. Silver and platinum nanowires have been fabricated using this approach for their applications in chemical sensing as catalytic materials to sniff toxic agents and in the area of biomedical nanotechnology for construction of artificial muscles. Electric field-assisted deposition allows the deposition of metals with a high degree of selectivity on carbon nanotubes by manipulating the charges on the surface of the nanotubes and forming electrostatic double-layer supercapacitors. Deposition of metals primarily occurred due to electrochemical reduction, electrophoresis, and electro-osmosis inside the walls of the nanotube. SEM and TEM investigations revealed silver and platinum nanowires between 10 nm and 100 nm in diameter. The present technique is versatile and enables the fabrication of a host of different types of metallic and semiconducting nanowires using carbon nanotube templates for nanoelectronics and a myriad of sensor applications.

Intense photoluminescence from dried double-stranded DNA and single-walled carbon nanotube hybrid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, M.; Kobayashi, T.; Ito, Y.

2014-01-27

Semiconducting single-walled carbon nanotubes (SWNTs) show near-infrared photoluminescence (PL) when they are individually isolated. This was an obstacle to use photonic properties of SWNTs on a solid surface. We show that SWNTs wrapped with DNA maintain intense PL under the dry conditions. SWNTs are well isolated individually by DNA even when the DNA-SWNT hybrids are agglomerated. This finding opens up application of SWNTs to photonic devices.

Single Wall Carbon Nanotube-Based Structural Health Sensing Materials

NASA Technical Reports Server (NTRS)

Watkins, A. Neal; Ingram, JoAnne L.; Jordan, Jeffrey D.; Wincheski, Russell A.; Smits, Jan M.; Williams, Phillip A.

2004-01-01

Single wall carbon nanotube (SWCNT)-based materials represent the future aerospace vehicle construction material of choice based primarily on predicted strength-to-weight advantages and inherent multifunctionality. The multifunctionality of SWCNTs arises from the ability of the nanotubes to be either metallic or semi-conducting based on their chirality. Furthermore, simply changing the environment around a SWCNT can change its conducting behavior. This phenomenon is being exploited to create sensors capable of measuring several parameters related to vehicle structural health (i.e. strain, pressure, temperature, etc.) The structural health monitor is constructed using conventional electron-beam lithographic and photolithographic techniques to place specific electrode patterns on a surface. SWCNTs are then deposited between the electrodes using a dielectrophoretic alignment technique. Prototypes have been constructed on both silicon and polyimide substrates, demonstrating that surface-mountable and multifunctional devices based on SWCNTs can be realized.

Separation of Single-Walled Carbon Nanotubes with DEP-FFF

NASA Technical Reports Server (NTRS)

Schmidt, Howard K.; Peng, Haiqing; Alvarez, Noe; Mendes, Manuel; Pasquali, Matteo

2011-01-01

A process using a modified dielectrophoresis device separates single-walled carbon nanotubes (SWNTs) according to their polarizability in electric fields. This depends on the size and dielectric constant of individual nanotubes and easily separates metallic from semiconducting nanotubes. Separation by length has also been demonstrated. Partial separation (enrichment) according to bandgap (which is linked to polarizability) has also been shown and can be improved to full separation of individual types of semiconducting SWNTs with better control over operational parameters and the length of SWNT starting material. This process and device can be scaled affordably to generate useful amounts of semiconducting SWNTs for electronic device development and production. In this study, a flow injection dielectrophoresis technique was used with a modified dielectrophoresis device. The length, width, and height of the modified chamber were 28, 2.5, and 0.025 cm, respectively. On the bottom of the chamber, there are two arrays of 50-m-wide, 2-m-thick gold electrodes, which are connected to an AC voltage generator and are alternately arranged so that every electrode is adjacent to two electrodes of the opposite polar. There is an additional plate electrode on the top of the chamber that is negatively biased. During the experiment, a syringe pump constantly pumps in the mobile phase, 1-percent sodium dodecylbenzene sulfonate (SDBS) solution, into the chamber. The frequency and voltage are set to 1 MHz and 10 V peak-to-peak, respectively. About 150 micro-L of SWNTs in 1- percent SDBS decanted solution are injected to the mobile phase through a septum near the entrance of the chamber. The flow rate of the mobile phase is set to 0.02 cu cm/min. The injected SWNTs sample flows through the chamber before it is lead into a fluorescence flow-through cell and collected for further analysis. The flow-through cell has three windows, thus allowing the fluorometer to collect fluorescence

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Carbon nanotubes: physics and applications

NASA Astrophysics Data System (ADS)

Bellucci, S.

2005-01-01

We overview definitions, properties and applications of Carbon nanotubes (CNTs). We describe the CNTs lifecycle: starting with phases and requirements, going through the different synthesis methods, describing then the various purification techniques. The fundamentals of functionalization and the use of defects in CNTs are reviewed, in connection also to ion irradiation techniques. Metal oxides and other semiconducting 1D nanostructures are then considered, before entering the description of the main features of the present status of INFN-LNF research in nanoscience, focusing on CNTs, as well as on aluminium nitride NTs (AlN NTs). We conclude our review by illustrating device application criteria for many applications in different areas of the field of nanotechnology.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Electrical transport properties of small diameter single-walled carbon nanotubes aligned on ST-cut quartz substrates

PubMed Central

2014-01-01

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications. PMID:25170326

Noise characteristics of single-walled carbon nanotube network transistors.

PubMed

Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

2008-07-16

The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors.

Comparison of noncovalent interactions of zigzag and armchair carbon nanotubes with heterocyclic and aromatic compounds: Imidazole and benzene, imidazophenazines, and tetracene

NASA Astrophysics Data System (ADS)

Zarudnev, Eugene S.; Stepanian, Stepan G.; Adamowicz, Ludwik; Leontiev, Victor S.; Karachevtsev, Victor A.

2017-02-01

We study non-covalent functionalization of SWCNT by linear heterocyclic compounds such as imidazophenazine (F1) and its derivatives (F2-F4). MP2 and DFT/M05-2X quantum-chemical methods are used to determine the structures and the interaction energies of complexes formed by F1-F4 with the zigzag(10,10) and armchair(6,6) nanotubes. The calculations show that for small diameter nanotubes the binding energies with zigzag nanotubes are stronger than with armchair nanotubes. But above the diameter of 1.4 nm the interaction energies for the armchair nanotubes become larger than for the zigzag nanotubes. Experimental measurements demonstrates that the ratio of the integral intensity of the resonance Raman bands assigned to the RBM modes of semiconducting nanotubes to the integral intensity of the metallic nanotubes increases for supernatant of SWCNT:F4 (1,2,3-triazole-[4,5-d]-phenazine) hybrids solved in 1-Methyl-2-pyrrolidone as compared to this ratio in sediment samples. It demonstrates that the linear heterocyclic compounds can be used for separating SWCNTs with different electron-conduction types.

Modifying the electronic and optical properties of carbon nanotubes

NASA Astrophysics Data System (ADS)

Kinder, Jesse M.

The intrinsic electronic and optical properties of carbon nanotubes make them promising candidates for circuit elements and LEDs in nanoscale devices. However, applied fields and interactions with the environment can modify these intrinsic properties. This dissertation is a theoretical study of perturbations to an ideal carbon nanotube. It illustrates how transport and optical properties of carbon nanotubes can be adversely affected or intentionally modified by the local environment. The dissertation is divided into three parts. Part I analyzes the effect of a transverse electric field on the single-electron energy spectrum of semiconducting carbon nanotubes. Part II analyzes the effect of the local environment on selection rules and decay pathways relevant to dark excitons. Part III is a series of 26 appendices. Two different models for a transverse electric field are introduced in Part I. The first is a uniform field perpendicular to the nanotube axis. This model suggests the field has little effect on the band gap until it exceeds a critical value that can be tuned with strain or a magnetic field. The second model is a transverse field localized to a small region along the nanotube axis. The field creates a pair of exponentially localized bound states but has no effect on the band gap for particle transport. Part II explores the physics of dark excitons in carbon nanotubes. Two model calculations illustrate the effect of the local environment on allowed optical transitions and nonradiative recombination pathways. The first model illustrates the role of inversion symmetry in the optical spectrum. Broken inversion symmetry may explain low-lying peaks in the exciton spectrum of boron nitride nanotubes and localized photoemission around impurities and interfaces in carbon nanotubes. The second model in Part II suggests that free charge carriers can mediate an efficient nonradiative decay process for dark excitons in carbon nanotubes. The appendices in Part III

Role of silver nanotube on conductivity, dielectric permittivity and current voltage characteristics of polyvinyl alcohol-silver nanocomposite film

NASA Astrophysics Data System (ADS)

Mukherjee, P. S.; Das, A. K.; Dutta, B.; Meikap, A. K.

2017-12-01

A comprehensive study on the prevailing conduction mechanism, dielectric relaxation and current voltage behaviour of Polyvinyl alcohol (PVA) - Silver (Ag) nanotube composite film has been reported. Introduction of Ag nanotubes enhances the conductivity and dielectric permittivity of film. Film shows semiconducting behaviour with two activation energies. The dc conductivity of the nanocomposite film obeys the adiabatic small polaron model. The dielectric permittivity can be analysed by modified Cole-Cole model. A non-Debye type asymmetric behaviour has been observed in the sample. The back to back Schottky diode concept has been used to describe the current-voltage characteristic of the composite film.

Edge-on and face-on functionalized Pc on enriched semiconducting SWCNT hybrids.

PubMed

Arellano, Luis M; Martín-Gomis, Luis; Gobeze, Habtom B; Molina, Desiré; Hermosa, Cristina; Gómez-Escalonilla, María J; Fierro, José Luis G; Sastre-Santos, Ángela; D'Souza, Francis; Langa, Fernando

2018-03-15

Enriched semiconducting single-walled carbon nanotubes (SWCNT (6,5) and SWCNT (7,6)) and HiPco nanotubes were covalently functionalized with either zinc phthalocyanine or silicon phthalocyanine as electron donors. The synthetic strategy resulted in edge-on and face-on geometries with respect to the phthalocyanine geometry, with both phthalocyanines held by an electronically conducting diphenylacetylene linker. The extent of functionalization in the MPc-SWCNT (M = Zn or Si) donor-acceptor nanohybrids was determined by systematic studies involving AFM, TGA, XPS, optical and Raman techniques. Intramolecular interactions in MPc-SWCNT nanohybrids were probed by studies involving optical absorbance, Raman, luminescence and electrochemical studies. Different degrees of interactions were observed depending on the type of MPc and mode of attachment. Substantial quenching of MPc fluorescence in these hybrids was observed from steady-state and three-dimensional fluorescence mapping, which suggests the occurrence of excited state events. Evidence for the occurrence of excited state charge transfer type interactions was subsequently secured from femtosecond transient absorption studies covering both the visible and near-infrared regions. Furthermore, electron-pooling experiments performed in the presence of a sacrificial electron donor and a second electron acceptor revealed accumulation of one-electron reduced product upon continuous irradiation of the nanohybrids. In such experiments, the ZnPc-SWCNT (6,5) nanohybrid outperformed other nanohybrids and this suggests that this is a superior donor-acceptor system for photocatalytic applications.

A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.

PubMed

Ghavami, Behnam; Raji, Mohsen; Pedram, Hossein

2011-08-26

Carbon nanotube field-effect transistors (CNFETs) show great promise as building blocks of future integrated circuits. However, synthesizing single-walled carbon nanotubes (CNTs) with accurate chirality and exact positioning control has been widely acknowledged as an exceedingly complex task. Indeed, density and chirality variations in CNT growth can compromise the reliability of CNFET-based circuits. In this paper, we present a novel statistical compact model to estimate the failure probability of CNFETs to provide some material and process guidelines for the design of CNFETs in gigascale integrated circuits. We use measured CNT spacing distributions within the framework of detailed failure analysis to demonstrate that both the CNT density and the ratio of metallic to semiconducting CNTs play dominant roles in defining the failure probability of CNFETs. Besides, it is argued that the large-scale integration of these devices within an integrated circuit will be feasible only if a specific range of CNT density with an acceptable ratio of semiconducting to metallic CNTs can be adjusted in a typical synthesis process.

Single Particle Transport Through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Govidan, T. R.

1999-01-01

The ability to manipulate carbon nanotubes with increasing precision has enabled a large number of successful electron transport experiments. These studies have primarily focussed on characterizing transport through both metallic and semiconducting wires. Tans et al. demonstrated ballistic transport in single-wall nanotubes for the first time, although the experimental configuration incurred large contact resistance. Subsequently, methods of producing low contact resistances have been developed and two terminal conductances smaller than 50 k-ohms have been repeatably demonstrated in single-wall and multi-wall nanotubes. In multi-wall nanotubes, Frank et al. demonstrated a resistance of approximately h/2e(exp 2) in a configuration where the outermost layer made contact to a liquid metal. This was followed by the work of de Pablo et al. where a resistance of h(bar)/27e(exp 2) (approximately 478 ohms) was measured in a configuration where electrical contact was made to many layers of a multi-wall nanotube. Frank et al. and Pablo et al. note that each conducting layer contributes a conductance of only 2e(exp 2)/h, instead of the 4e(exp 2)/h that a single particle mode counting picture yields. These small resistances have been obtained in microns long nanotubes, making them the best conducting molecular wires to date. The large conductance of nanotube wires stems from the fact that the crossing bands of nanotubes are robust to defect scattering.

A Single-Material Logical Junction Based on 2D Crystal PdS2.

PubMed

Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

2016-02-03

A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical synthesis of self-organized TiO2 crystalline nanotubes without annealing

NASA Astrophysics Data System (ADS)

Giorgi, Leonardo; Dikonimos, Theodoros; Giorgi, Rossella; Buonocore, Francesco; Faggio, Giuliana; Messina, Giacomo; Lisi, Nicola

2018-03-01

This work demonstrates that upon anodic polarization in an aqueous fluoride-containing electrolyte, TiO2 nanotube array films can be formed with a well-defined crystalline phase, rather than an amorphous one. The crystalline phase was obtained avoiding any high temperature annealing. We studied the formation of nanotubes in an HF/H2O medium and the development of crystalline grains on the nanotube wall, and we found a facile way to achieve crystalline TiO2 nanotube arrays through a one-step anodization. The crystallinity of the film was influenced by the synthesis parameters, and the optimization of the electrolyte composition and anodization conditions (applied voltage and time) were carried out. For comparison purposes, crystalline anatase TiO2 nanotubes were also prepared by thermal treatment of amorphous nanotubes grown in an organic bath (ethylene glycol/NH4F/H2O). The morphology and the crystallinity of the nanotubes were studied by field emission gun-scanning electron microscopy (FEG-SEM) and Raman spectroscopy, whereas the electrochemical and semiconducting properties were analyzed by means of linear sweep voltammetry, impedance spectroscopy, and Mott-Schottky plots. X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) allowed us to determine the surface composition and the electronic structure of the samples and to correlate them with the electrochemical data. The optimal conditions to achieve a crystalline phase with high donor concentration are defined.

Self-Assembly of Hierarchical DNA Nanotube Architectures with Well-Defined Geometries.

PubMed

Jorgenson, Tyler D; Mohammed, Abdul M; Agrawal, Deepak K; Schulman, Rebecca

2017-02-28

An essential motif for the assembly of biological materials such as actin at the scale of hundreds of nanometers and beyond is a network of one-dimensional fibers with well-defined geometry. Here, we demonstrate the programmed organization of DNA filaments into micron-scale architectures where component filaments are oriented at preprogrammed angles. We assemble L-, T-, and Y-shaped DNA origami junctions that nucleate two or three micron length DNA nanotubes at high yields. The angles between the nanotubes mirror the angles between the templates on the junctions, demonstrating that nanoscale structures can control precisely how micron-scale architectures form. The ability to precisely program filament orientation could allow the assembly of complex filament architectures in two and three dimensions, including circuit structures, bundles, and extended materials.

Solution-Processed Carbon Nanotube True Random Number Generator.

PubMed

Gaviria Rojas, William A; McMorrow, Julian J; Geier, Michael L; Tang, Qianying; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

2017-08-09

With the growing adoption of interconnected electronic devices in consumer and industrial applications, there is an increasing demand for robust security protocols when transmitting and receiving sensitive data. Toward this end, hardware true random number generators (TRNGs), commonly used to create encryption keys, offer significant advantages over software pseudorandom number generators. However, the vast network of devices and sensors envisioned for the "Internet of Things" will require small, low-cost, and mechanically flexible TRNGs with low computational complexity. These rigorous constraints position solution-processed semiconducting single-walled carbon nanotubes (SWCNTs) as leading candidates for next-generation security devices. Here, we demonstrate the first TRNG using static random access memory (SRAM) cells based on solution-processed SWCNTs that digitize thermal noise to generate random bits. This bit generation strategy can be readily implemented in hardware with minimal transistor and computational overhead, resulting in an output stream that passes standardized statistical tests for randomness. By using solution-processed semiconducting SWCNTs in a low-power, complementary architecture to achieve TRNG, we demonstrate a promising approach for improving the security of printable and flexible electronics.

Topological Phases in Graphene Nanoribbons: Junction States, Spin Centers, and Quantum Spin Chains

NASA Astrophysics Data System (ADS)

Cao, Ting; Zhao, Fangzhou; Louie, Steven G.

2017-08-01

We show that semiconducting graphene nanoribbons (GNRs) of different width, edge, and end termination (synthesizable from molecular precursors with atomic precision) belong to different electronic topological classes. The topological phase of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formulas for their topological invariants and shown that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisting of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1 /2 chain with tunable exchange interaction. The discoveries here not only are of scientific interest for studies of quasi-one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.

Topological Phases in Graphene Nanoribbons: Junction States, Spin Centers, and Quantum Spin Chains.

PubMed

Cao, Ting; Zhao, Fangzhou; Louie, Steven G

2017-08-18

We show that semiconducting graphene nanoribbons (GNRs) of different width, edge, and end termination (synthesizable from molecular precursors with atomic precision) belong to different electronic topological classes. The topological phase of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formulas for their topological invariants and shown that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisting of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1/2 chain with tunable exchange interaction. The discoveries here not only are of scientific interest for studies of quasi-one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.

Computational study of the shift of the G band of double-walled carbon nanotubes due to interlayer interactions

NASA Astrophysics Data System (ADS)

Popov, Valentin N.; Levshov, Dmitry I.; Sauvajol, Jean-Louis; Paillet, Matthieu

2018-04-01

The interactions between the layers of double-walled carbon nanotubes induce a measurable shift of the G bands relative to the isolated layers. While experimental data on this shift in freestanding double-walled carbon nanotubes has been reported in the past several years, a comprehensive theoretical description of the observed shift is still lacking. The prediction of this shift is important for supporting the assignment of the measured double-walled nanotubes to particular nanotube types. Here, we report a computational study of the G-band shift as a function of the semiconducting inner layer radius and interlayer separation. We find that with increasing interlayer separation, the G band shift decreases, passes through zero and becomes negative, and further increases in absolute value for the wide range of considered inner layer radii. The theoretical predictions are shown to agree with the available experimental data within the experimental uncertainty.

Silicon Carbide Nanotube Synthesized

NASA Technical Reports Server (NTRS)

Lienhard, Michael A.; Larkin, David J.

2003-01-01

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Nanotube Tunneling as a Consequence of Probable Discrete Trajectories

NASA Technical Reports Server (NTRS)

Robinson, Daryl C.

2001-01-01

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but is divided into charge "islands." A clear understanding of tunneling phenomena can be useful to elucidate the mechanism for electrical conduction in nanotubes. This paper represents the first attempt to shed light on the aforementioned phenomenon through viewing tunneling as a natural consequence of "discrete trajectories." The relevance of this analysis is that it may provide further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. In a situation involving particles impinging on a classically impenetrable barrier, the result of quantum mechanics that the probability of detecting transmitted particles falls off exponentially is derived without wave theory. This paper should provide a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

Influence of electronic type purity on the lithiation of single-walled carbon nanotubes.

PubMed

Jaber-Ansari, Laila; Iddir, Hakim; Curtiss, Larry A; Hersam, Mark C

2014-03-25

Single-walled carbon nanotubes (SWCNTs) have emerged as one of the leading additives for high-capacity nanocomposite lithium ion battery electrodes due to their ability to improve electrode conductivity, current collection efficiency, and charge/discharge rate for high power applications. However, since as-grown SWCNTs possess a distribution of physical and electronic structures, it is of high interest to determine which subpopulations of SWCNTs possess the highest lithiation capacity and to develop processing methods that can enhance the lithiation capacity of underperforming SWCNT species. Toward this end, SWCNT electronic type purity is controlled via density gradient ultracentrifugation, enabling a systematic study of the lithiation of SWCNTs as a function of metal versus semiconducting content. Experimentally, vacuum-filtered freestanding films of metallic SWCNTs are found to accommodate lithium with an order of magnitude higher capacity than their semiconducting counterparts, which is consistent with ab initio molecular dynamics and density functional theory calculations in the limit of isolated SWCNTs. In contrast, SWCNT film densification leads to the enhancement of the lithiation capacity of semiconducting SWCNTs to levels comparable to metallic SWCNTs, which is corroborated by theoretical calculations that show increased lithiation of semiconducting SWCNTs in the limit of small SWCNT-SWCNT spacing. Overall, these results will inform ongoing efforts to utilize SWCNTs as conductive additives in nanocomposite lithium ion battery electrodes.

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt

NASA Astrophysics Data System (ADS)

Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen

2011-08-01

CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.

Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Noh-Hwal; Lee, Seung-Hoon; Jeong, Seung-Hyeon; Khim, Dongyoon; Kim, Yun Ho; Yoo, Sungmi; Noh, Yong-Young; Kim, Jang-Joo

2018-03-01

In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18 ± 0.85 cm2V-1s-1 average), on/off current ratio (107), and off current (˜1 pA). Thus, the combination of less purified PFDD-PD (98%-99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.

Electro-mechanical Properties of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Yang, Liu; Han, Jie; Liu, J. P.; Saubum Subhash (Technical Monitor)

1998-01-01

We present a simple picture to understand the bandgap variation of carbon nanotubes with small tensile and torsional strains, independent of chirality. Using this picture, we are able to predict a simple dependence of d(Bandoap)$/$d(strain) on the value of $(N_x-N_y)*mod 3$, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)$/$d(strain) as a function of tensile strain arising from a change in the value of $q$ corresponding to the minimum bandgap. These calculations are complemented by calculations of the change in bandgap using energy minimized structures, and some important differences are discussed. The calculations are based on the $i$ electron approximation.

Carbon Nanotube Conditioning: Ab Initio Simulations of the Effect of Interwall Interaction, Defects And Doping on the Electronic Properties of Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Castillo, Matias Soto

Using carbon nanotubes for electrical conduction applications at the macroscale has been shown to be a difficult task for some time now, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present in bundles grown by current state-of-the-art reactors, so that the electrical conduction of a bundle or even wire may be enhanced. In our work, we have used first-principles density functional theory calculations to study the effect of interwall interaction, defects and doping on the electronic structure of metallic, semi-metal and semiconducting single- and double-walled carbon nanotubes in order to gain a clear picture of their properties. The electronic band gap for a range of zigzag single-walled carbon nanotubes with chiral indices (5,0) - (30,0) was obtained. Their properties were used as a stepping stone in the study of the interwall interaction in double-walled carbon nanotubes, from which it was found that the electronic band gap depends on the type of inner and outer tubes, average diameter, and interwall distance. The effect of vacancy defects was also studied for a range of single-walled carbon nanotubes. It was found that the electronic band gap is reduced for the entire range of zigzag carbon nanotubes, even at vacancy defects concentrations of less than 1%. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics of the adsorption doping of diatomic iodine. An ideal adsorption site

Modeling of Electronic Transport in Scanning Tunneling Microscope Tip-Carbon Nanotube Systems

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Kwak, Dochan (Technical Monitor)

2000-01-01

A model is proposed for two observed current-voltage (I-V) patterns in a recent experiment with a scanning tunneling microscope tip and a carbon nanotube. We claim that there are two mechanical contact modes for a tip (metal) -nanotube (semiconductor) junction (1) with or (2) without a tiny vacuum gap (0.1 - 0.2 nm). With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube; the Schottky mechanism in (2) would result in I does not equal 0 only with V < 0 for an n-nanotube, and the bias polarities would be reversed for a p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type.

Room-temperature current blockade in atomically defined single-cluster junctions

NASA Astrophysics Data System (ADS)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Electronic structure and optical property of boron doped semiconducting graphene nanoribbons

NASA Astrophysics Data System (ADS)

Chen, Aqing; Shao, Qingyi; Wang, Li; Deng, Feng

2011-08-01

We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C-B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nanoribbons gets lower than that of intrinsic semiconducting graphene nanoribbons. Our results also show that the boron doped semiconducting graphene nanoribbons behave as p-type semiconducting and that the absorption coefficient of boron doped armchair graphene nanoribbons is generally enhanced between 2.0 eV and 3.3 eV. Therefore, our results have a great significance in developing nano-material for fabricating the nano-photovoltaic devices.

Ballistic and resonant negative photocurrents in single carbon nanotubes

NASA Astrophysics Data System (ADS)

Karnetzky, Christoph; Sponfeldner, Lukas; Engl, Max; Holleitner, Alexander W.

We present ultrafast photocurrent experiments on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. We demonstrate that a ballistic transport of the photogenerated charge carriers can be achieved. Moreover, thermionic emission processes to the contacts dominate the photocurrent. In contrast, the charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands. We acknowledge the ERC via the project NanoREAL.

Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

NASA Astrophysics Data System (ADS)

Chegel, Raad; Behzad, Somayeh

2013-01-01

We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

Influence of Thermal Modification and Morphology of TiO₂ Nanotubes on Their Electrochemical Properties for Biosensors Applications.

PubMed

Arkusz, Katarzyna; Paradowska, Ewa; Nycz, Marta; Krasicka-Cydzik, Elżzbieta

2018-05-01

The morphology of self-assembled TiO2 nanotubes layer plays a key role in electrical conductivity and biocompatibility properties in terms of cell proliferation, adhesion and mineralization. Many research studies have been reported in using a TiO2 nanotubes for different medical applications, there is a lack of unified correlation between TNT morphology and its electrochemical properties. The aim of this study was to examine the effects of diameter and annealing conditions on TiO2 nanotubes with identical height and their behaviour as biosensor platform. TiO2 nanotubes layer, 1000 nm thick with nanotubes of diameters in range: 25 ÷ 100 nm, was prepared by anodizing of the titanium foil in ethylene glycol solution. To change the crystal structure and improve the electrical conductivity of the semiconductive TiO2 nanotubes layer the thermal treatment by annealing in argon, nitrogen or air was used. Basing on the electrochemical tests, the XPS and scanning microscopy examinations, as well as the contact angle measurements and the amperometric detection of potassium ferricyanide, it was concluded that the 1000 nm thick TiO2 nanotubes layer with nanotubes of 50 nm diameter, annealed in argon, showed the best physicochemical properties, which helps investigate the adsorption immobilization mechanism. The possibility of using TNT as a biosensor platform was confirmed in hydrogen detection.

Graphene-based vertical-junction diodes and applications

NASA Astrophysics Data System (ADS)

Choi, Suk-Ho

2017-09-01

In the last decade, graphene has received extreme attention as an intriguing building block for electronic and photonic device applications. This paper provides an overview of recent progress in the study of vertical-junction diodes based on graphene and its hybrid systems by combination of graphene and other materials. The review is especially focused on tunnelling and Schottky diodes produced by chemical doping of graphene or combination of graphene with various semiconducting/ insulating materials such as hexagonal boron nitrides, Si-quantum-dots-embedded SiO2 multilayers, Si wafers, compound semiconductors, Si nanowires, and porous Si. The uniqueness of graphene enables the application of these convergence structures in high-efficient devices including photodetectors, solar cells, resonant tunnelling diodes, and molecular/DNA sensors.

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

NASA Astrophysics Data System (ADS)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

Electron doping effects on the electrical conductivity of zigzag carbon nanotubes and corresponding unzipped armchair graphene nanoribbons

NASA Astrophysics Data System (ADS)

Mousavi, Hamze; Jalilvand, Samira; Kurdestany, Jamshid Moradi; Grabowski, Marek

2017-10-01

The Kubo formula is used to extract the electrical conductivity (EC) of different diameters of doped zigzag carbon nanotubes and their corresponding unzipped armchair graphene nanoribbons, as a function of temperature and chemical potential, within the tight-binding Hamiltonian model and Green's functions approach. The results reveal more sensitivity to temperature for semiconducting systems in addition to a decrease in EC of all systems with increasing cross-sections.

Semiconducting transition metal oxides.

PubMed

Lany, Stephan

2015-07-22

Open shell transition metal oxides are usually described as Mott or charge transfer insulators, which are often viewed as being disparate from semiconductors. Based on the premise that the presence of a correlated gap and semiconductivity are not mutually exclusive, this work reviews electronic structure calculations on the binary 3d oxides, so to distill trends and design principles for semiconducting transition metal oxides. This class of materials possesses the potential for discovery, design, and development of novel functional semiconducting compounds, e.g. for energy applications. In order to place the 3d orbitals and the sp bands into an integrated picture, band structure calculations should treat both contributions on the same footing and, at the same time, account fully for electron correlation in the 3d shell. Fundamentally, this is a rather daunting task for electronic structure calculations, but quasi-particle energy calculations in GW approximation offer a viable approach for band structure predictions in these materials. Compared to conventional semiconductors, the inherent multivalent nature of transition metal cations is more likely to cause undesirable localization of electron or hole carriers. Therefore, a quantitative prediction of the carrier self-trapping energy is essential for the assessing the semiconducting properties and to determine whether the transport mechanism is a band-like large-polaron conduction or a small-polaron hopping conduction. An overview is given for the binary 3d oxides on how the hybridization between the 3d crystal field symmetries with the O-p orbitals of the ligands affects the effective masses and the likelihood of electron and hole self-trapping, identifying those situations where small masses and band-like conduction are more likely to be expected. The review concludes with an illustration of the implications of the increased electronic complexity of transition metal cations on the defect physics and doping, using

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

EDITORIAL: Focus on Carbon Nanotubes

NASA Astrophysics Data System (ADS)

2003-09-01

The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau, P Umek, K Hernadi, P Marcoux, B Lukic, Cs Mikó, M Milas, R Gaál and L Forró Transitional behaviour in the transformation from active end

Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

DOEpatents

Wang, Zhong L [Marietta, GA; Xu, Sheng [Atlanta, GA

2011-08-23

An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

Inner- and outer-wall sorting of double-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Li, Han; Gordeev, Georgy; Wasserroth, Sören; Chakravadhanula, Venkata Sai Kiran; Neelakandhan, Shyam Kumar Chethala; Hennrich, Frank; Jorio, Ado; Reich, Stephanie; Krupke, Ralph; Flavel, Benjamin Scott

2017-12-01

Double-walled carbon nanotubes (DWCNTs) consist of two coaxially aligned single-walled carbon nanotubes (SWCNTs), and previous sorting methods only achieved outer-wall electronic-type selectivity. Here, a separation technique capable of sorting DWCNTs by semiconducting (S) or metallic (M) inner- and outer-wall electronic type is presented. Electronic coupling between the inner and outer wall is used to alter the surfactant coating around each of the DWCNT types, and aqueous gel permeation is used to separate them. Aqueous methods are used to remove SWCNT species from the raw material and prepare enriched DWCNT fractions. The enriched DWCNT fractions are then transferred into either chlorobenzene or toluene using the copolymer PFO-BPy to yield the four inner@outer combinations of M@M, M@S, S@M and S@S. The high purity of the resulting fractions is verified by absorption measurements, transmission electron microscopy, atomic force microscopy, resonance Raman mapping and high-density field-effect transistor devices.

Biomolecular Doping of Single-Walled Carbon Nanotubes by Thyroid Hormone

NASA Astrophysics Data System (ADS)

Rojas, Enrique; Paulson, Scott; Stern, Mike; Staii, Cristian; Dratman, Mary; Johnson, Alan

2004-03-01

Electron doping of semiconducting single-walled carbon nanotubes (SWNTs) by the thyroid hormone triiodothyronine (T3) is observed. T3 is applied locally, in solution, to SWNT field effect transistors (FETs) and binds along the length of the nanotube. T3 acts as an electron donor, shifting the I-V gate characteristics towards negative values of gate voltage. Shifts in the characteristics are measured as a function of the concentration of the solution. The effect is nearly reversible by rinsing the FETs with the solvent. Several days after application of T3, with no solvent rinsing, the gate characteristics are also nearly reversed. Experiments with a similar molecule for which the phenol ring is brominated as well as experiments with the de-iodinated molecule (T0) are performed to inform the effect of the iodine. The interaction of T3 with SWNTs may suggest a electronic interaction of T3 with other one-dimensional systems such as DNA.

Inner- and outer-wall sorting of double-walled carbon nanotubes.

PubMed

Li, Han; Gordeev, Georgy; Wasserroth, Sören; Chakravadhanula, Venkata Sai Kiran; Neelakandhan, Shyam Kumar Chethala; Hennrich, Frank; Jorio, Ado; Reich, Stephanie; Krupke, Ralph; Flavel, Benjamin Scott

2017-12-01

Double-walled carbon nanotubes (DWCNTs) consist of two coaxially aligned single-walled carbon nanotubes (SWCNTs), and previous sorting methods only achieved outer-wall electronic-type selectivity. Here, a separation technique capable of sorting DWCNTs by semiconducting (S) or metallic (M) inner- and outer-wall electronic type is presented. Electronic coupling between the inner and outer wall is used to alter the surfactant coating around each of the DWCNT types, and aqueous gel permeation is used to separate them. Aqueous methods are used to remove SWCNT species from the raw material and prepare enriched DWCNT fractions. The enriched DWCNT fractions are then transferred into either chlorobenzene or toluene using the copolymer PFO-BPy to yield the four inner@outer combinations of M@M, M@S, S@M and S@S. The high purity of the resulting fractions is verified by absorption measurements, transmission electron microscopy, atomic force microscopy, resonance Raman mapping and high-density field-effect transistor devices.

Intervalley scattering induced by Coulomb interaction and disorder in carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2013-09-01

We develop a theory of intervalley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective mass description of single-particle states, we study the two-electron system by fully including Coulomb interaction, spin-orbit coupling, and short-range disorder. We find that the energy level splittings associated with intervalley scattering are nearly independent of the chiral angle and, while smaller than those due to spin-orbit interaction, large enough to be measurable.

Carbon nanotube woven textile photodetector

NASA Astrophysics Data System (ADS)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

Separation of Semiconducting Carbon Nanotubes for Flexible and Stretchable Electronics Using Polymer Removable Method.

PubMed

Lei, Ting; Pochorovski, Igor; Bao, Zhenan

2017-04-18

Electronics that are soft, conformal, and stretchable are highly desirable for wearable electronics, prosthetics, and robotics. Among the various available electronic materials, single walled carbon nanotubes (SWNTs) and their network have exhibited high mechanical flexibility and stretchability, along with comparable electrical performance to traditional rigid materials, e.g. polysilicon and metal oxides. Unfortunately, SWNTs produced en masse contain a mixture of semiconducting (s-) and metallic (m-) SWNTs, rendering them unsuitable for electronic applications. Moreover, the poor solubility of SWNTs requires the introduction of insulating surfactants to properly disperse them into individual tubes for device fabrication. Compared to other SWNT dispersion and separation methods, e.g., DNA wrapping, density gradient ultracentrifugation, and gel chromatography, polymer wrapping can selectively disperse s-SWNTs with high selectivity (>99.7%), high concentration (>0.1 mg/mL), and high yield (>20%). In addition, this method only requires simple sonication and centrifuge equipment with short processing time down to 1 h. Despite these advantages, the polymer wrapping method still faces two major issues: (i) The purified s-SWNTs usually retain a substantial amount of polymers on their surface even after thorough rinsing. The low conductivity of the residual polymers impedes the charge transport in SWNT networks. (ii) Conjugated polymers used for SWNT wrapping are expensive. Their prices ($100-1000/g) are comparable or even higher than those of SWNTs ($10-300/g). These utilized conjugated polymers represent a large portion of the overall separation cost. In this Account, we summarize recent progresses in polymer design for selective dispersion and separation of SWNTs. We focus particularly on removable and/or recyclable polymers that enable low-cost and scalable separation methods. First, different separation methods are compared to show the advantages of the polymer

Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

NASA Technical Reports Server (NTRS)

Wang, Zhong L. (Inventor); Zhou, Jun (Inventor); Wang, Xudong (Inventor); He, Jr-Hau (Inventor); Song, Jinhui (Inventor)

2011-01-01

A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.

First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

NASA Astrophysics Data System (ADS)

Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

2018-06-01

Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

Investigation on optical absorption properties of ion irradiated single walled carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishalli,, E-mail: vishalli-2008@yahoo.com; Dharamvir, Keya, E-mail: keya@pu.ac.in; Kaur, Ramneek

2015-08-28

In the present study change in the optical absorption properties of single walled carbon nanotubes (SWCNTs) under nickel ion (60 MeV) irradiation at various fluences has been investigated. Langmuir Blodgett technique is used to deposit SWCNT thin film of uniform thickness. AFM analysis shows a network of interconnected bundles of nanotubes. UV-Vis-NIR absorption spectra indicate that the sample mainly contain SWCNTs of semiconducting nature. It has been found in absorption spectra that there is decrease in the intensity of the characteristic SWCNT peaks with increase in fluence. At fluence value 1×10{sup 14} ions/cm{sup 2} there is almost complete suppression of themore » characteristic SWCNTs peaks.The decrease in the optical absorption with increase in fluence is due to the increase in the disorder in the system which leads to the decrease in optically active states.« less

Ballistic anisotropic magnetoresistance in core-shell nanowires and rolled-up nanotubes

NASA Astrophysics Data System (ADS)

Chang, Ching-Hao; Ortix, Carmine

2017-01-01

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic conductance has been predicted to occur in a number of newly synthesized nonmagnetic semiconducting nanostructures subject to externally applied magnetic fields, without necessitating spin-orbit coupling. In this paper, we review past works on the prediction of this BAMR effect in core-shell nanowires (CSN) and rolled-up nanotubes (RUNTs). This is complemented by new results, we establish for the transport properties of tubular nanosystems subject to external magnetic fields.

Orienting semi-conducting π-conjugated polymers.

PubMed

Brinkmann, Martin; Hartmann, Lucia; Biniek, Laure; Tremel, Kim; Kayunkid, Navaphun

2014-01-01

The present review focuses on the recent progress made in thin film orientation of semi-conducting polymers with particular emphasis on methods using epitaxy and shear forces. The main results reported in this review deal with regioregular poly(3-alkylthiophene)s and poly(dialkylfluorenes). Correlations existing between processing conditions, macromolecular parameters and the resulting structures formed in thin films are underlined. It is shown that epitaxial orientation of semi-conducting polymers can generate a large palette of semi-crystalline and nanostructured morphologies by a subtle choice of the orienting substrates and growth conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dye-sensitized photoelectrochemical water oxidation through a buried junction.

PubMed

Xu, Pengtao; Huang, Tian; Huang, Jianbin; Yan, Yun; Mallouk, Thomas E

2018-06-18

Water oxidation has long been a challenge in artificial photosynthetic devices that convert solar energy into fuels. Water-splitting dye-sensitized photoelectrochemical cells (WS-DSPECs) provide a modular approach for integrating light-harvesting molecules with water-oxidation catalysts on metal-oxide electrodes. Despite recent progress in improving the efficiency of these devices by introducing good molecular water-oxidation catalysts, WS-DSPECs have poor stability, owing to the oxidation of molecular components at very positive electrode potentials. Here we demonstrate that a solid-state dye-sensitized solar cell (ss-DSSC) can be used as a buried junction for stable photoelectrochemical water splitting. A thin protecting layer of TiO 2 grown by atomic layer deposition (ALD) stabilizes the operation of the photoanode in aqueous solution, although as a solar cell there is a performance loss due to increased series resistance after the coating. With an electrodeposited iridium oxide layer, a photocurrent density of 1.43 mA cm -2 was observed in 0.1 M pH 6.7 phosphate solution at 1.23 V versus reversible hydrogen electrode, with good stability over 1 h. We measured an incident photon-to-current efficiency of 22% at 540 nm and a Faradaic efficiency of 43% for oxygen evolution. While the potential profile of the catalyst layer suggested otherwise, we confirmed the formation of a buried junction in the as-prepared photoelectrode. The buried junction design of ss-DSSs adds to our understanding of semiconductor-electrocatalyst junction behaviors in the presence of a poor semiconducting material.

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

NASA Astrophysics Data System (ADS)

Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

2010-01-01

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

Self-assembled hybrid polymer-TiO2 nanotube array heterojunction solar cells.

PubMed

Shankar, Karthik; Mor, Gopal K; Prakasam, Haripriya E; Varghese, Oomman K; Grimes, Craig A

2007-11-20

Films comprised of 4 microm long titanium dioxide nanotube arrays were fabricated by anodizing Ti foils in an ethylene glycol based electrolyte. A carboxylated polythiophene derivative was self-assembled onto the TiO2 nanotube arrays by immersing them in a solution of the polymer. The binding sites of the carboxylate moiety along the polymer chain provide multiple anchoring sites to the substrate, making for a stable rugged film. Backside illuminated liquid junction solar cells based on TiO2 nanotube films sensitized by the self-assembled polymeric layer showed a short-circuit current density of 5.5 mA cm-2, a 0.7 V open circuit potential, and a 0.55 fill factor yielding power conversion efficiencies of 2.1% under AM 1.5 sun. A backside illuminated single heterojunction solid state solar cell using the same self-assembled polymer was demonstrated and yielded a photocurrent density as high as 2.0 mA cm-2. When a double heterojunction was formed by infiltrating a blend of poly(3-hexylthiophene) (P3HT) and C60-methanofullerene into the self-assembled polymer coated nanotube arrays, a photocurrent as high as 6.5 mA cm-2 was obtained under AM 1.5 sun with a corresponding efficiency of 1%. The photocurrent action spectra showed a maximum incident photon-to-electron conversion efficiency (IPCE) of 53% for the liquid junction cells and 25% for the single heterojunction solid state solar cells.

Enhanced Raman Microprobe Imaging of Single-Wall Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Hadjiev, V. G.; Arepalli, S.; Nikolaev, P.; Jandl, S.; Yowell, L.

2003-01-01

We explore Raman microprobe capabilities to visualize single wall carbon nanotubes (SWCNTs). Although this technique is limited to a micron scale, we demonstrate that images of individual SWCNTs, bundles or their agglomerates can be generated by mapping Raman active elementary excitations. We measured the Raman response from carbon vibrations in SWCNTs excited by confocal scanning of a focused laser beam. Carbon vibrations reveal key characteristics of SWCNTs as nanotube diameter distribution (radial breathing modes, RBM, 100-300 cm(exp -1)), presence of defects and functional groups (D-mode, 1300-1350 cm(exp -1)), strain and oxidation states of SWCNTs, as well as metallic or semiconducting character of the tubes encoded in the lineshape of the G-modes at 1520-1600 cm(exp - 1). In addition, SWCNTs are highly anisotropic scatterers. The Raman response from a SWCNT is maximal for incident light polarization parallel to the tube axis and vanishing for perpendicular directions. We show that the SWCNT bundle shape or direction can be determined, with some limitations, from a set of Raman images taken at two orthogonal directions of the incident light polarization.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Efficient active waveguiding properties of Mo6 nano-cluster-doped polymer nanotubes

NASA Astrophysics Data System (ADS)

Bigeon, J.; Huby, N.; Amela-Cortes, M.; Molard, Y.; Garreau, A.; Cordier, S.; Bêche, B.; Duvail, J.-L.

2016-06-01

We investigate 1D nanostructures based on a Mo6@SU8 hybrid nanocomposite in which photoluminescent Mo6 clusters are embedded in the photosensitive SU8 resist. Tens of micrometers long Mo6@SU8-based tubular nanostructures were fabricated by the wetting template method, enabling the control of the inner and outer diameter to about 190 nm and 240 nm respectively, as supported by structural and optical characterizations. The image plane optical study of these nanotubes under optical pumping highlights the efficient waveguiding phenomenon of the red luminescence emitted by the clusters. Moreover, the wave vector distribution in the Fourier plane determined by leakage radiation microscopy gives additional features of the emission and waveguiding. First, the anisotropic red luminescence of the whole system can be attributed to the guided mode along the nanotube. Then, a low-loss propagation behavior is evidenced in the Mo6@SU8-based nanotubes. This result contrasts with the weaker waveguiding signature in the case of UV210-based nanotubes embedding PFO (poly(9,9-di-n-octylfluorenyl-2,7-diyl)). It is attributed to the strong reabsorption phenomenon, owing to overlapping between absorption and emission bands in the semi-conducting conjugated polymer PFO. These results make this Mo6@SU8 original class of nanocomposite a promising candidate as nanosources for submicronic photonic integration.

Efficient active waveguiding properties of Mo6 nano-cluster-doped polymer nanotubes.

PubMed

Bigeon, J; Huby, N; Amela-Cortes, M; Molard, Y; Garreau, A; Cordier, S; Bêche, B; Duvail, J-L

2016-06-24

We investigate 1D nanostructures based on a Mo6@SU8 hybrid nanocomposite in which photoluminescent Mo6 clusters are embedded in the photosensitive SU8 resist. Tens of micrometers long Mo6@SU8-based tubular nanostructures were fabricated by the wetting template method, enabling the control of the inner and outer diameter to about 190 nm and 240 nm respectively, as supported by structural and optical characterizations. The image plane optical study of these nanotubes under optical pumping highlights the efficient waveguiding phenomenon of the red luminescence emitted by the clusters. Moreover, the wave vector distribution in the Fourier plane determined by leakage radiation microscopy gives additional features of the emission and waveguiding. First, the anisotropic red luminescence of the whole system can be attributed to the guided mode along the nanotube. Then, a low-loss propagation behavior is evidenced in the Mo6@SU8-based nanotubes. This result contrasts with the weaker waveguiding signature in the case of UV210-based nanotubes embedding PFO (poly(9,9-di-n-octylfluorenyl-2,7-diyl)). It is attributed to the strong reabsorption phenomenon, owing to overlapping between absorption and emission bands in the semi-conducting conjugated polymer PFO. These results make this Mo6@SU8 original class of nanocomposite a promising candidate as nanosources for submicronic photonic integration.

Improving Single-Carbon-Nanotube-Electrode Contacts Using Molecular Electronics.

PubMed

Krittayavathananon, Atiweena; Ngamchuea, Kamonwad; Li, Xiuting; Batchelor-McAuley, Christopher; Kätelhön, Enno; Chaisiwamongkhol, Korbua; Sawangphruk, Montree; Compton, Richard G

2017-08-17

We report the use of an electroactive species, acetaminophen, to modify the electrical connection between a carbon nanotube (CNT) and an electrode. By applying a potential across two electrodes, some of the CNTs in solution occasionally contact the electrified interface and bridge between two electrodes. By observing a single CNT contact between two microbands of an interdigitated Au electrode in the presence and absence of acetaminophen, the role of the molecular species at the electronic junction is revealed. As compared with the pure CNT, the current magnitude of the acetaminophen-modified CNTs significantly increases with the applied potentials, indicating that the molecule species improves the junction properties probably via redox shuttling.

Structures with high number density of carbon nanotubes and 3-dimensional distribution

NASA Technical Reports Server (NTRS)

Chen, Zheng (Inventor); Tzeng, Yonhua (Inventor)

2002-01-01

A composite is described having a three dimensional distribution of carbon nanotubes. The critical aspect of such composites is a nonwoven network of randomly oriented fibers connected at their junctions to afford macropores in the spaces between the fibers. A variety of fibers may be employed, including metallic fibers, and especially nickel fibers. The composite has quite desirable properties for cold field electron emission applications, such as a relatively low turn-on electric field, high electric field enhancement factors, and high current densities. The composites of this invention also show favorable properties for other an electrode applications. Several methods, which also have general application in carbon nanotube production, of preparing these composites are described and employ a liquid feedstock of oxyhydrocarbons as carbon nanotube precursors.

Selective interface transparency in graphene nanoribbon based molecular junctions.

PubMed

Dou, K P; Kaun, C C; Zhang, R Q

2018-03-08

A clear understanding of electrode-molecule interfaces is a prerequisite for the rational engineering of future generations of nanodevices that will rely on single-molecule coupling between components. With a model system, we reveal a peculiar dependence on interfaces in all graphene nanoribbon-based carbon molecular junctions. The effect can be classified into two types depending on the intrinsic feature of the embedded core graphene nanoflake (GNF). For metallic GNFs with |N A - N B | = 1, good/poor contact transparency occurs when the core device aligns with the center/edge of the electrode. The situation is reversed when a semiconducting GNF is the device, where N A = N B . These results may shed light on the design of real connecting components in graphene-based nanocircuits.

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

PubMed

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (<10 V). In addition, outstanding mechanical flexibility of printed nanotube thin-film transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

PREFACE: Semiconducting oxides Semiconducting oxides

NASA Astrophysics Data System (ADS)

Catlow, Richard; Walsh, Aron

2011-08-01

Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

Carbon Nanotube Based Light Sensor

NASA Technical Reports Server (NTRS)

Wincheski, russell A. (Inventor); Smits, Jan M. (Inventor); Jordan, Jeffrey D. (Inventor); Watkins, Anthony Neal (Inventor); Ingram, JoAnne L. (Inventor)

2006-01-01

A light sensor substrate comprises a base made from a semi-conductive material and topped with a layer of an electrically non-conductive material. A first electrode and a plurality of carbon nanotube (CNT)-based conductors are positioned on the layer of electrically non-conductive material with the CNT-based conductors being distributed in a spaced apart fashion about a periphery of the first electrode. Each CNT-based conductor is coupled on one end thereof to the first electrode and extends away from the first electrode to terminate at a second free end. A second or gate electrode is positioned on the non-conductive material layer and is spaced apart from the second free end of each CNT-based conductor. Coupled to the first and second electrode is a device for detecting electron transfer along the CNT-based conductors resulting from light impinging on the CNT-based conductors.

Dynamics of Photoexcitation and Photocatalysis at Nanostructured Carbon Interfaces

DTIC Science & Technology

2015-07-14

nanotubes with a sacrificial polymer and eliminating the polymer using a critical point drying process. This process creates aerogel structures that...Bindl DJ, Jacobberger RM, Wu M-Y, Singha Roy S, Arnold MS, Semiconducting Carbon Nanotube Aerogel Bulk Heterojunction Solar Cells, Small 10 (16), pp...ACS Nano 2015, 9 (1), 564-572. Ye Y, Bindl DJ, Jacobberger RM, Wu M-Y, Singha Roy S, Arnold MS, Semiconducting Carbon Nanotube Aerogel Bulk

Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor

NASA Astrophysics Data System (ADS)

Shah, Khurshed A.; Parvaiz, M. Shunaid

2016-12-01

The CNTFETs are the most promising advanced alternatives to the conventional FETs due to their outstanding structure and electrical properties. In this paper, we report the I-V characteristics of zig-zag (4, 0) semiconducting coaxial carbon nanotube field effect transistor (CNTFET) using the non-equilibrium Green's function formalism. The CNTFET is co-doped with two, four and six boron-nitrogen (BN) atoms separately near the electrodes using the substitutional doping method and the I-V characteristics were calculated for each model using Atomistic Tool Kit software (version 13.8.1) and its virtual interface. The results reveal that all models show negative differential resistance (NDR) behavior with the maximum peak to valley current ratio (PVCR) of 3.2 at 300 K for the four atom doped model. The NDR behavior is due to the band to band tunneling (BTBT) in semiconducting CNTFET and decreases as the doping in the channel increases. The results are beneficial for next generation designing of nano devices and their potential applications in electronic industry.

Ionization Gas Sensor using Aligned Multiwalled Carbon Nanotubes Array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kermany, A. R.; Mohamed, N. M.; Singh, B. S. M.

2011-05-25

The challenge with current conventional gas sensors which are operating using semiconducting oxides is their size. After the introduction of nanotechnology and in order to reduce the dimension and consequently the power consumption and cost, new materials such as carbon nanotubes (CNTs) are being introduced. From previous works and characterization results, it was proven that the CNTs based gas sensor has better sensitivity, selectivity and faster response time in compared with semiconducting oxides based gas sensors. As in this work, a fabrication and successful testing of an ionization-based gas sensor using aligned Multiwalled CNTs (MWCNTs) as sensing element is discussed,more » in which MWCNTs array and Al film are used as anode and cathode plates respectively with electrode separation ranging from 80 {mu}m to 140 {mu}m. Aligned MWCNTs array was incorporated into a sensor configuration in the gas chamber for testing of gases such as argon, air, and mixed gas of 2%H{sub 2} in air. Obtained results show that among the three gases, argon has the lowest breakdown voltage whilst air has the highest value and the breakdown voltage was found to decrease as the electrode spacing was reduced from 140 {mu}m to 80 {mu}m for all three gases.« less

Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes.

PubMed

Li, Hui; Wen, Chenyu; Zhang, Youwei; Wu, Dongping; Zhang, Shi-Li; Qiu, Zhi-Jun

2016-02-18

In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via dispersion of SWCNTs into a percolating three-dimensional (3D) network in a semiconducting polymer. The resultant semiconducting composite film is evaluated as a sensing membrane in field effect transistor (FET) sensors. In order to attain reproducible characteristics of the FET sensors, a pulsed-gate-bias measurement technique is adopted to eliminate current hysteresis and drift of sensing baseline. The rate of gas adsorption follows the Langmuir-type isotherm as a function of gas concentration and scales with film thickness. This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. The description of gas adsorption developed in the present work is generic for all semiconductors and the demonstrated composite with 3D percolating SWCNTs dispersed in functional polymer represents a promising new type of material for advanced gas sensors.

EDITORIAL: Focus on Carbon Nanotubes

NASA Astrophysics Data System (ADS)

2003-09-01

The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents <;A article="1367-2630/5/1/117">Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau

From Broadband to Electrochromic Notch Filters with Printed Monochiral Carbon Nanotubes

PubMed Central

2018-01-01

Dense layers of semiconducting single-walled carbon nanotubes (SWNTs) serve as electrochromic (EC) materials in the near-infrared with high optical density and high conductivity. EC cells with tunable notch filter properties instead of broadband absorption are created via highly selective dispersion of specific semiconducting SWNTs through polymer-wrapping followed by deposition of thick films by aerosol-jet printing. A simple planar geometry with spray-coated mixed SWNTs as the counter electrode renders transparent metal oxides redundant and facilitates complete bleaching within a few seconds through iongel electrolytes with high ionic conductivities. Monochiral (6,5) SWNT films as working electrodes exhibit a narrow absorption band at 997 nm (full width at half-maximum of 55–73 nm) with voltage-dependent optical densities between 0.2 and 4.5 and a modulation depth of up to 43 dB. These (6,5) SWNT notch filters can retain more than 95% of maximum bleaching for several hours under open-circuit conditions. In addition, different levels of transmission can be set by applying constant low voltage (1.5 V) pulses with modulated width or by a given number of fixed short pulses. PMID:29521086

Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors.

PubMed

Cao, Xuan; Lau, Christian; Liu, Yihang; Wu, Fanqi; Gui, Hui; Liu, Qingzhou; Ma, Yuqiang; Wan, Haochuan; Amer, Moh R; Zhou, Chongwu

2016-11-22

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm 2 V -1 s -1 , on-off current ratio I on /I off ∼ 10 4 , and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances.

Noncovalent functionalization of carbon nanotubes with porphyrins: meso-tetraphenylporphine and its transition metal complexes.

PubMed

Basiuk, Elena V; Basiuk, Vladimir A; Santiago, Patricia; Puente-Lee, Iván

2007-01-01

Noncovalent functionalization of carbon nanotubes with meso-tetraphenylporphine (H2TPP) and its metal(II) complexes NiTPP and CoTPP was studied by means of different experimental techniques and theoretical calculations. As follows from the experimental adsorption curves, free H2TPP ligand exhibits the strongest adsorption of three porphyrins tested, followed by CoTPP and NiTPP. At the highest porphyrin concentrations studied, the adsorption at multi-walled carbon nanotubes was about 2% (by weight) for H2TPP, 1% for CoTPP, and 0.5% for NiTPP. Transmission electron microscopy observations revealed carbon nanotubes with a variable degree of surface coverage with porphyrin molecules. According to scanning electron microscopy, the nanotubes glue together rather than debundle; apparently, a large porphyrin excess resulting in polymolecular adsorption is essential for exfoliation/debundling of the nanotube ropes. The nanotube/porphyrins hybrids were studied by infrared and Raman spectroscopy, as well as by scanning tunneling microscopy. Electronic structure calculations were performed at the B3LYP/LANL2MB theoretical level with the unsubstituted porphine (H2P) and its Co(II) complex, on one hand, and open-end armchair (5,5) (ANT) and zigzag (8,0) (ZNT) SWNT models, on the other hand. The interaction of H2P with ANT was found to be by 3.9 kcal mol(-1) stronger than that of CoP. At the same time, CoP+ZNT complex is more stable by 42.7 kcal mol(-1) as compared to H2P+ZNT According to these calculated results, the free porphyrins interact less selectively with zigzag and armchair (i.e., semiconducting and metallic) nanotubes, whereas the difference becomes very large for the metal porphyrins. HOMO-LUMO structure, electrostatic potential and spin density distribution for the paramagnetic cobalt(II) complexes were analyzed.

Optical Spectroscopy and Photophysics of Single Wall Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Brus, Louis

2006-03-01

We explore the fundamental nature and dynamics of excited electronic states in SWNT. Psec luminescence and photobleaching dynamics of SWNTs in micellar solution show that non-radiative Auger recombination is extremely fast. At low pH, nanotube surface endoperoxides protonate and introduce holes that quench the luminescence. At higher concentration these holes also bleach the band gap optical absorption. Near infrared two photon luminescence excitation spectra quantitatively reveal the importance of excitons. In order to characterize excited states in both metallic and semiconducting SWNTs at the single-tube level, we detect white-light Rayleigh scattering from individual tubes suspended over an open slit in a substrate. Diagnostic spectra with high signal to noise are obtained in just a few minutes.

Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.

PubMed

Lee, Seung-Hoon; Xu, Yong; Khim, Dongyoon; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

2016-11-30

Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (ε r ) fluoropolymer (CYTOP, ε r = 1.8), poly(methyl methacrylate) (PMMA, ε r = 3.3), and a high-ε r ferroelectric relaxor [P(VDF-TrFE-CTFE), ε r = 14.2]. The s-SWNT-FETs with polymer dielectrics show typical ambipolar charge transport with high ON/OFF ratios (up to ∼10 5 ) and mobilities (hole mobility up to 6.77 cm 2 V -1 s -1 for CYTOP). The s-SWNT-FET with the lowest-k dielectric, CYTOP, exhibits the highest mobility owing to formation of a favorable interface for charge transport, which is confirmed by the lowest activation energies, evaluated by the fluctuation-induced tunneling model (FIT) and the traditional Arrhenius model (E aFIT = 60.2 meV and E aArr = 10 meV). The operational stability of the devices showed a good agreement with the activation energies trend (drain current decay ∼14%, threshold voltage shift ∼0.26 V in p-type regime of CYTOP devices). The poor performance in high-ε r devices is accounted for by a large energetic disorder caused by the randomly oriented dipoles in high-k dielectrics. In conclusion, the low-k dielectric forms a favorable interface with s-SWNTs for efficient charge transport in s-SWNT-FETs.

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

PubMed

Wang, Weiyi; Narayan, Awadhesh; Tang, Lei; Dolui, Kapildeb; Liu, Yanwen; Yuan, Xiang; Jin, Yibo; Wu, Yizheng; Rungger, Ivan; Sanvito, Stefano; Xiu, Faxian

2015-08-12

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what is expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ∼9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

TEM-nanoindentation studies of semiconducting structures.

PubMed

Le Bourhis, E; Patriarche, G

2007-01-01

This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.

The electro-structural behaviour of yarn-like carbon nanotube fibres immersed in organic liquids

NASA Astrophysics Data System (ADS)

Terrones, Jeronimo; Windle, Alan H.; Elliott, James A.

2014-10-01

Yarn-like carbon nanotube (CNT) fibres are a hierarchically-structured material with a variety of promising applications such as high performance composites, sensors and actuators, smart textiles, and energy storage and transmission. However, in order to fully realize these possibilities, a more detailed understanding of their interactions with the environment is required. In this work, we describe a simplified representation of the hierarchical structure of the fibres from which several mathematical models are constructed to explain electro-structural interactions of fibres with organic liquids. A balance between the elastic and surface energies of the CNT bundle network in different media allows the determination of the maximum lengths that open junctions can sustain before collapsing to minimize the surface energy. This characteristic length correlates well with the increase of fibre resistance upon immersion in organic liquids. We also study the effect of charge accumulation in open interbundle junctions and derive expressions to describe experimental data on the non-ohmic electrical behaviour of fibres immersed in polar liquids. Our analyses suggest that the non-ohmic behaviour is caused by progressively shorter junctions collapsing as the voltage is increased. Since our models are not based on any property unique to carbon nanotubes, they should also be useful to describe other hierarchical structures.

Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?

PubMed

Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

2015-02-21

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp(2) carbon-based nanodevices. To evaluate whether such enhanced properties would be retained under various realistic conditions, we investigate the structural and electronic properties of semiconducting carbon nanotubes on perfect and defective hexagonal boron nitride sheets under an external electric field as well as with a metal impurity, using density functional theory. We verify that the use of a perfect hexagonal boron nitride sheet as a substrate indeed improves the device performances of carbon nanotubes, compared with the use of conventional substrates such as SiO2. We further show that even the hexagonal boron nitride with some defects can show better performance as a substrate. Our calculations, on the other hand, also suggest that some defective boron nitride layers with a monovacancy and a nickel impurity could bring about poor device behavior since the imperfections impair electrical conductivity due to residual scattering under an applied electric field.

Ultrafast spectroscopy of coherent phonon in carbon nanotubes using sub-5-fs visible pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, Takayoshi; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 Japan; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

2016-02-01

In the last two decades, nano materials are attracting many scientists’ interest for both basic and application viewpoints. In order to understand the properties of nano systems it is needed to understand the dynamic properties which control the specific properties of the systems. All the primary processes in nano systems are taking place in femtosecond regime. Our group has been able to stably generate visible to near-infrared sub-5-fs laser pulses using a noncollinear optical parametric amplifier (NOPA) by the combination of various novel techniques including non-collinear optical parametric amplifier, pulse compression by a prism pair and grating pair. We applymore » the sub-5-fs pulses to study real-time coherent phonon in a one-dimensional system of carbon nanotubes. We determine exciton-phonon coupling mechanisms by observing the breathing mode in semiconducting carbon nanotubes and show the effect of electronic transition affected by the vibrational mode.« less

Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

PubMed

Banerjee, Arghya; Chattopadhyay, Kalyan K

2008-01-01

Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices.

A new method to synthesize complicated multi-branched carbon nanotubes with controlled architecture and composition.

PubMed

Wei, Dacheng; Liu, Yunqi; Cao, Lingchao; Fu, Lei; Li, Xianglong; Wang, Yu; Yu, Gui; Zhu, Daoben

2006-02-01

Here we develop a simple method by using flow fluctuation to synthesize arrays of multi-branched carbon nanotubes (CNTs) that are far more complex than those previously reported. The architectures and compositions can be well controlled, thus avoiding any template or additive. A branching mechanism of fluctuation-promoted coalescence of catalyst particles is proposed. This finding will provide a hopeful approach to the goal of CNT-based integrated circuits and be valuable for applying branched junctions in nanoelectronics and producing branched junctions of other materials.

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length.

PubMed

Cao, Xuan; Wu, Fanqi; Lau, Christian; Liu, Yihang; Liu, Qingzhou; Zhou, Chongwu

2017-02-28

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10 5 , low-voltage operation, and good mobility of ∼15.03 cm 2 V -1 s -1 . These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics.

Ohmic contacts to semiconducting diamond

NASA Astrophysics Data System (ADS)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Hierarchically structured carbon nanotubes for energy conversion and storage

NASA Astrophysics Data System (ADS)

Du, Feng

As the world population continues to increase, large amounts of energy are consumed. Reality pushes us to find new energy or use our current energy more efficiently. Researches on energy conversion and storage have become increasingly important and essential. This grand challenge research has led to a recent focus on nanostructured materials. Carbon nanomaterials such as carbon nanotubes (CNTs) play a critical role in all of these nanotechnology challenges. CNTs have a very large surface area, a high electrochemical accessibility, high electronic conductivity and strong mechanical properties. This combination of properties makes them promising materials for energy device applications, such as FETs, supercapacitors, fuel cells, and lithium batteries. This study focuses on exploring the possibility of using vertically aligned carbon nanotubes (VA-CNTs) as the electrode materials in these energy applications. For the application of electrode materials, electrical conductive, vertically aligned CNTs with controllable length and diameter were synthesized. Several CVD methods for VA-CNT growth have been explored, although the iron / aluminum pre-coated catalyst CVD system was the main focus. A systematic study of several factors, including growth time, temperature, gas ratio, catalyst coating was conducted. The mechanism of VA-CNTs was discussed and a model for VA-CNT length / time was proposed to explain the CNT growth rate. Furthermore, the preferential growth of semiconducting (up to 96 atom% carbon) VA-SWNTs by using a plasma enhanced CVD process combined with fast heating was also explored, and these semiconducting materials have been directly used for making FETs using simple dispersion in organic solvent, without any separation and purification. Also, by inserting electron-accepting nitrogen atoms into the conjugated VA-CNT structure during the growth process, we synthesized vertically aligned nitrogen containing carbon nanotubes (VA-NCNTs). After purification of

Charge Transport in Two-Photon Semiconducting Structures for Solar Fuels.

PubMed

Liu, Guohua; Du, Kang; Haussener, Sophia; Wang, Kaiying

2016-10-20

Semiconducting heterostructures are emerging as promising light absorbers and offer effective electron-hole separation to drive solar chemistry. This technology relies on semiconductor composites or photoelectrodes that work in the presence of a redox mediator and that create cascade junctions to promote surface catalytic reactions. Rational tuning of their structures and compositions is crucial to fully exploit their functionality. In this review, we describe the possibilities of applying the two-photon concept to the field of solar fuels. A wide range of strategies including the indirect combination of two semiconductors by a redox couple, direct coupling of two semiconductors, multicomponent structures with a conductive mediator, related photoelectrodes, as well as two-photon cells are discussed for light energy harvesting and charge transport. Examples of charge extraction models from the literature are summarized to understand the mechanism of interfacial carrier dynamics and to rationalize experimental observations. We focus on a working principle of the constituent components and linking the photosynthetic activity with the proposed models. This work gives a new perspective on artificial photosynthesis by taking simultaneous advantages of photon absorption and charge transfer, outlining an encouraging roadmap towards solar fuels. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Can carbon nanotube fibers achieve the ultimate conductivity?—Coupled-mode analysis for electron transport through the carbon nanotube contact

NASA Astrophysics Data System (ADS)

Xu, Fangbo; Sadrzadeh, Arta; Xu, Zhiping; Yakobson, Boris I.

2013-08-01

Recent measurements of carbon nanotube (CNT) fibers electrical conductivity still show the values lower than that of individual CNTs, by about one magnitude order. The imperfections of manufacturing process and constituent components are described as culprits. What if every segment is made perfect? In this work, we study the quantum conductance through the parallel junction of flawless armchair CNTs using tight-binding method in conjunction with non-equilibrium Green's function approach. Short-range oscillations within the long-range oscillations as well as decaying envelopes are all observed in the computed Fermi-level (low bias) conductance as a function of contact length, L. The propagation of CNTs' Bloch waves is cast in the coupled-mode formalism and helps to reveal the quantum interference nature of various behaviors of conductance. Our analysis shows that the Bloch waves at the Fermi-level propagate through a parallel junction without reflection only at an optimal value of contact length. For quite a long junction, however, the conductance at the Fermi level diminishes due to the perturbation of periodic potential field of close-packed CNTs. Thus, a macroscopic fiber, containing an infinite number of junctions, forms a filter that permits passage of electrons with specific wave vectors, and these wave vectors are determined by the collection of all the junction lengths. We also argue that the energy gap introduced by long junctions can be overcome by small voltage (˜0.04 V) across the whole fiber. Overall, developing long individual all-armchair metallic CNTs serves as a promising way to the manufacture of high-conductivity fibers.

Ultraclean individual suspended single-walled carbon nanotube field effect transistor

NASA Astrophysics Data System (ADS)

Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng

2018-04-01

In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (˜50 kΩ), mobility of 8600 cm2 V-1 s-1 and large on/off ratio (˜105) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

Symmetry-adapted tight-binding calculations of the totally symmetric A1 phonons of single-walled carbon nanotubes and their resonant Raman intensity

NASA Astrophysics Data System (ADS)

Popov, Valentin N.; Lambin, Philippe

2007-03-01

The atomistic calculations of the physical properties of perfect single-walled carbon nanotubes based on the use of the translational symmetry of the nanotubes face increasing computational difficulties for most of the presently synthesized nanotubes with up to a few thousand atoms in the unit cell. This difficulty can be circumvented by use of the helical symmetry of the nanotubes and a two-atom unit cell. We present the results of such symmetry-adapted tight-binding calculations of the totally symmetric A1 phonons (the RBM and the G-band modes) and their resonant Raman intensity for several hundred nanotubes. In particular, we show that (1) the frequencies and the resonant Raman intensity of the RBM and the G-band modes show diameter and chirality dependence and family patterns, (2) the strong electron- A1LO phonon interactions in metallic nanotubes lead to Kohn anomalies at the zone center, (3) the G-band consists of a subband due to A1LO phonons of semiconducting tubes centered at ∼1593 cm -1, a subband of A1TO phonons at ∼1570 cm -1, and a subband of A1LO phonons of metallic tubes at ∼1540 cm -1. The latter prediction confirms previous theoretical results but disagrees with the commonly adopted assignment of the G-band features.

Roles of inter-SWCNT junctions in resistive humidity response

NASA Astrophysics Data System (ADS)

Zhang, Kang; Zou, Jianping; Zhang, Qing

2015-11-01

As a promising chemiresistor for gas sensing, the single-walled carbon nanotube (SWCNT) network has not yet been fully utilized for humidity detection. In this work, it is found that as humidity increases from 10% to 85%, the resistance of as-grown SWCNT networks first decreases and then increases. This non-monotonic resistive response to humidity limits their sensing capabilities. The competition between SWCNT resistance and inter-tube junction resistance changes is then found to be responsible for the non-monotonic resistive humidity responses. Moreover, creating sp3 scattering centers on the SWCNT sidewall by monovalent functionalization of four-bromobenzene diazonium tetrafluoroborate is shown to be capable of eliminating the influence from the inter-tube junctions, resulting in a continuous resistance drop as humidity increases from 10% to 85%. Our results revealed the competing resistive humidity sensing process in as-grown SWCNT networks, which could also be helpful in designing and optimizing as-grown SWCNT networks for humidity sensors and other gas sensors.

Semiconducting compounds and devices incorporating same

DOEpatents

Marks, Tobin J; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

2014-06-17

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

Semiconducting compounds and devices incorporating same

DOEpatents

Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

2016-01-19

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

Thin films composed of multiwalled carbon nanotubes, gold nanoparticles and myoglobin for humidity detection at room temperature.

PubMed

Qi, Zhi-mei; Wei, Mingdeng; Honma, Itaru; Zhou, Haoshen

2007-02-02

Optically transparent and electrically conductive nanocomposite thin films consisting of multiwalled carbon nanotubes (MWCNTs), gold nanoparticles (GNPs) and myoglobin molecules that glue GNPs and MWCNTs together are fabricated for the first time on glass substrates from aqueous solution. The nanocomposite thin film is capable of varying its resistance, impedance or optical transmittance at room temperature in response to changes in ambient humidity. The conductometric sensitivity to relative humidity (RH) of the nanocomposite thin film is compared with those of the pure and Mb-functionalized MWCNT layers. The pure MWCNT layer shows a small increase in its resistance with increasing RH due to the effect of p-type semiconducting nanotubes present in the film. In contrast, a four times higher sensitivity to RH is observed for both the nanocomposite and Mb-functionalized MWCNT thin films. The sensitivity enhancement is attributable to swelling of the thin films induced by water absorption in the presence of Mb molecules, which increases the inter-nanotube spacing and thereby causes a further increase of the film resistance. A humidity change as low as DeltaRH=0.3 % has been readily detected by conductometry using the nanocomposite thin film.

Titanium-dioxide nanotube p-n homojunction diode

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

2014-12-01

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

Spin glass in semiconducting KFe 1.05 Ag 0.88 Te 2 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, Hyejin; Lei, Hechang; Klobes, B.

2015-05-01

We report discovery of KFe 1.05 Ag 0.88 Te 2 single crystals with semiconducting spin glass ground state. Composition and structure analyses suggest nearly stoichiometric I 4 / mmm space group but allow for the existence of vacancies, absent in long-range semiconducting antiferromagnet KFe 0.85 Ag 1.15 Te 2 . The subtle change in stoichometry in Fe-Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

Planar silver nanowire, carbon nanotube and PEDOT:PSS nanocomposite transparent electrodes

NASA Astrophysics Data System (ADS)

Stapleton, Andrew J.; Yambem, Soniya D.; Johns, Ashley H.; Afre, Rakesh A.; Ellis, Amanda V.; Shapter, Joe G.; Andersson, Gunther G.; Quinton, Jamie S.; Burn, Paul L.; Meredith, Paul; Lewis, David A.

2015-04-01

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω-1 is reported for the electrodes, which is much higher than that measured for indium tin oxide and reported for other AgNW composites. The AgNW:SWCNT:PEDOT:PSS electrode was used to fabricate low temperature (annealing free) devices demonstrating their potential to function with a range of organic semiconducting polymer:fullerene bulk heterojunction blend systems.

Photoluminescence Dynamics of Aryl sp 3 Defect States in Single-Walled Carbon Nanotubes

DOE PAGES

Hartmann, Nicolai F.; Velizhanin, Kirill A.; Haroz, Erik H.; ...

2016-08-16

Photoluminescent defect states introduced by sp 3 functionalization of semiconducting carbon nanotubes are rapidly emerging as important routes for boosting emission quantum yields and introducing new functionality. Knowledge of the relaxation dynamics of these states is required for understanding how functionalizing agents (molecular dopants) may be designed to access specific behaviors. We measure photoluminescence (PL) decay dynamics of sp 3 defect states introduced by aryl functionalization of the carbon nanotube surface. Results are given for five different nanotube chiralities, each doped with a range of aryl functionality. We find the PL decays of these sp 3 defect states are biexponential,more » with both components relaxing on timescales of ~ 100 ps. Exciton trapping at defects is found to increases PL lifetimes by a factor of 5-10, in comparison to those for the free exciton. A significant chirality dependence is observed in the decay times, ranging from 77 ps for (7,5) nanotubes to > 600 ps for (5,4) structures. The strong correlation of time constants with emission energy indicates relaxation occurs via multiphonon decay processes, with close agreement to theoretical expectations. Variation of the aryl dopant further modulates decay times by 10-15%. The aryl defects also affect PL lifetimes of the free E 11 exciton. Shortening of the E 11 bright state lifetime as defect density increases provides further confirmation that defects act as exciton traps. A similar shortening of the E11 dark exciton lifetime is found as defect density increases, providing strong experimental evidence that dark excitons are also trapped at such defect sites.« less

Photoluminescence Dynamics of Aryl sp 3 Defect States in Single-Walled Carbon Nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartmann, Nicolai F.; Velizhanin, Kirill A.; Haroz, Erik H.

Photoluminescent defect states introduced by sp 3 functionalization of semiconducting carbon nanotubes are rapidly emerging as important routes for boosting emission quantum yields and introducing new functionality. Knowledge of the relaxation dynamics of these states is required for understanding how functionalizing agents (molecular dopants) may be designed to access specific behaviors. We measure photoluminescence (PL) decay dynamics of sp 3 defect states introduced by aryl functionalization of the carbon nanotube surface. Results are given for five different nanotube chiralities, each doped with a range of aryl functionality. We find the PL decays of these sp 3 defect states are biexponential,more » with both components relaxing on timescales of ~ 100 ps. Exciton trapping at defects is found to increases PL lifetimes by a factor of 5-10, in comparison to those for the free exciton. A significant chirality dependence is observed in the decay times, ranging from 77 ps for (7,5) nanotubes to > 600 ps for (5,4) structures. The strong correlation of time constants with emission energy indicates relaxation occurs via multiphonon decay processes, with close agreement to theoretical expectations. Variation of the aryl dopant further modulates decay times by 10-15%. The aryl defects also affect PL lifetimes of the free E 11 exciton. Shortening of the E 11 bright state lifetime as defect density increases provides further confirmation that defects act as exciton traps. A similar shortening of the E11 dark exciton lifetime is found as defect density increases, providing strong experimental evidence that dark excitons are also trapped at such defect sites.« less

Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts.

PubMed

Zhang, Jin; Zhang, Kenan; Xia, Bingyu; Wei, Yang; Li, Dongqi; Zhang, Ke; Zhang, Zhixing; Wu, Yang; Liu, Peng; Duan, Xidong; Xu, Yong; Duan, Wenhui; Fan, Shoushan; Jiang, Kaili

2017-10-01

Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe 2 and MoS 2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe 2 CCVH from unipolar to bipolar, and the transition of WSe 2 /MoS 2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical

On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

NASA Astrophysics Data System (ADS)

Jang, Ho-Kyun; Choi, Jun Hee; Kim, Do-Hyun; Kim, Gyu Tae

2018-06-01

Single-walled carbon nanotube (SWCNT) is generally used as a networked structure in the fabrication of a field-effect transistor (FET) since it is known that one-third of SWCNT is electrically metallic and the remains are semiconducting. In this case, the presence of metallic paths by metallic SWCNT (m-SWCNT) becomes a significant technical barrier which hinders the networks from achieving a semiconducting behavior, resulting in a low on/off ratio. Here, we report on an easy method of controlling the on/off ratio of a FET where semiconducting SWCNT (s-SWCNT) and m-SWCNT constitute networks between source and drain electrodes. A FET with SWCNT networks was simply sonicated under water to control the on/off ratio and network density. As a result, the FET having an almost metallic behavior due to the metallic paths by m-SWCNT exhibited a p-type semiconducting behavior. The on/off ratio ranged from 1 to 9.0 × 104 along sonication time. In addition, theoretical calculations based on Monte-Carlo method and circuit simulation were performed to understand and explain the phenomenon of a change in the on/off ratio and network density by sonication. On the basis of experimental and theoretical results, we found that metallic paths contributed to a high off-state current which leads to a low on/off ratio and that sonication formed sparse SWCNT networks where metallic paths of m-SWCNT were removed, resulting in a high on/off ratio. This method can open a chance to save the device which has been considered as a failed one due to a metallic behavior by a high network density leading to a low on/off ratio.

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

PubMed Central

Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

2017-01-01

Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material. PMID:28290495

Graphene and carbon nanotubes: synthesis, characterization and applications for beyond silicon electronics

NASA Astrophysics Data System (ADS)

Gomez de Arco, Lewis Mortimer

discussion on the structure and properties of graphene and carbon nanotubes. Chapter 2, presents the development of a chemical vapor deposition method for scalable graphene synthesis and the evaluation of its electrical properties as the active channel in field effect transistor and as a transparent conductor. Chapter 3 presents further work on graphene synthesis on single crystal nickel and the influence of the substrate atomic arrangement on the synthesized graphene. Chapter 4 presents the implementation of the highly scalable graphene synthesized by CVD as the transparent electrode in flexible organic photovoltaic cells. Chapter 5 evaluates the influence of substrate/nanotube interactions during align nanotube growth on the Raman signature of the resulting aligned nanotubes, nanotube structure and metal to semiconductor ratio. Chapter 6 presents our findings on a scalable method that can be used at wafer scale to achieve metal to semiconductor conversion of carbon nanotubes by light irradiation and its application to achieve semiconducting CNTFETs. Finally, in chapter 7, future research directions in related areas of science and technology are proposed.

Structural Ordering of Semiconducting Polymers and Small-Molecules for Organic Electronics

NASA Astrophysics Data System (ADS)

O'Hara, Kathryn Allison

Semiconducting polymers and small-molecules can be readily incorporated into electronic devices such as organic photovoltaics (OPVs), thermoelectrics (OTEs), organic light emitting diodes (OLEDs), and organic thin film transistors (OTFTs). Organic materials offer the advantage of being processable from solution to form flexible and lightweight thin films. The molecular design, processing, and resulting thin film morphology of semiconducting polymers drastically affect the optical and electronic properties. Charge transport within films of semiconducting polymers relies on the nanoscale organization to ensure electronic coupling through overlap of molecular orbitals and to provide continuous transport pathways. While the angstrom-scale packing details can be studied using X-ray scattering methods, an understanding of the mesoscale, or the length scale over which smaller ordered regions connect, is much harder to achieve. Grain boundaries play an important role in semiconducting polymer thin films where the average grain size is much smaller than the total distance which charges must traverse in order to reach the electrodes in a device. The majority of semiconducting polymers adopt a lamellar packing structure in which the conjugated backbones align in parallel pi-stacks separated by the alkyl side-chains. Only two directions of transport are possible--along the conjugated backbone and in the pi-stacking direction. Currently, the discussion of transport between crystallites is centered around the idea of tie-chains, or "bridging" polymer chains connecting two ordered regions. However, as molecular structures become increasingly complex with the development of new donor-acceptor copolymers, additional forms of connectivity between ordered domains should be considered. High resolution transmission electron microscopy (HRTEM) is a powerful tool for directly imaging the crystalline grain boundaries in polymer and small-molecule thin films. Recently, structures

Metal/Ion Interactions Induced p–i–n Junction in Methylammonium Lead Triiodide Perovskite Single Crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ting; Mukherjee, Rupam; Ovchinnikova, Olga S.

Hybrid perovskites, as emerging multifunctional semiconductors, have demonstrated dual electronic/ionic conduction properties. Here, we report a metal/ion interaction induced p-i-n junction across slightly n-type doped MAPbI 3 single crystals with Au/MAPbI 3/Ag configuration based on interface dependent Seebeck effect, Hall effect and time-of-flight secondary ion mass spectrometry analysis. The organic cations (MA +) interact with Au atoms, forming positively charged coordination complexes at Au/MAPbI 3 interface, whereas iodine anions (I –) can react with Ag contacts, leading to interfacial ionic polarization. Such metal/ion interactions establish a p-doped region near the Au/MAPbI 3 interface due to the formation of MA +more » vacancies, and an n-doped region near the Ag/MAPbI 3 interface due to formation of I – vacancies, consequently forming a p-i-n junction across the crystal in Au/MAPbI 3/Ag configuration. Therefore, the metal/ion interaction plays a role in determining the surface electronic structure and semiconducting properties of hybrid perovskites.« less

Metal/Ion Interactions Induced p–i–n Junction in Methylammonium Lead Triiodide Perovskite Single Crystals

DOE PAGES

Wu, Ting; Mukherjee, Rupam; Ovchinnikova, Olga S.; ...

2017-11-17

Hybrid perovskites, as emerging multifunctional semiconductors, have demonstrated dual electronic/ionic conduction properties. Here, we report a metal/ion interaction induced p-i-n junction across slightly n-type doped MAPbI 3 single crystals with Au/MAPbI 3/Ag configuration based on interface dependent Seebeck effect, Hall effect and time-of-flight secondary ion mass spectrometry analysis. The organic cations (MA +) interact with Au atoms, forming positively charged coordination complexes at Au/MAPbI 3 interface, whereas iodine anions (I –) can react with Ag contacts, leading to interfacial ionic polarization. Such metal/ion interactions establish a p-doped region near the Au/MAPbI 3 interface due to the formation of MA +more » vacancies, and an n-doped region near the Ag/MAPbI 3 interface due to formation of I – vacancies, consequently forming a p-i-n junction across the crystal in Au/MAPbI 3/Ag configuration. Therefore, the metal/ion interaction plays a role in determining the surface electronic structure and semiconducting properties of hybrid perovskites.« less

Recent progress on the structure separation of single-wall carbon nanotubes

NASA Astrophysics Data System (ADS)

Cui, Jiaming; Yang, Dehua; Zeng, Xiang; Zhou, Naigen; Liu, Huaping

2017-11-01

The mass production of single-structure, single-wall carbon nanotubes (SWCNTs) with identical properties is critical for their basic research and technical applications in the fields of electronics, optics and optoelectronics. Great efforts have been made to control the structures of SWCNTs since their discovery. Recently, the structure separation of SWCNTs has been making great progress. Various solution-sorting methods have been developed to achieve not only the separation of metallic and semiconducting species, but also the sorting of distinct (n, m) single-chirality species and even their enantiomers. This progress would dramatically accelerate the application of SWCNTs in the next-generation electronic devices. Here, we review the recent progress in the structure sorting of SWCNTs and outline the challenges and prospects of the structure separation of SWCNTs.

Planar silver nanowire, carbon nanotube and PEDOT:PSS nanocomposite transparent electrodes

PubMed Central

Stapleton, Andrew J; Yambem, Soniya D; Johns, Ashley H; Afre, Rakesh A; Ellis, Amanda V; Shapter, Joe G; Andersson, Gunther G; Quinton, Jamie S; Burn, Paul L; Meredith, Paul

2015-01-01

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω−1 is reported for the electrodes, which is much higher than that measured for indium tin oxide and reported for other AgNW composites. The AgNW:SWCNT:PEDOT:PSS electrode was used to fabricate low temperature (annealing free) devices demonstrating their potential to function with a range of organic semiconducting polymer:fullerene bulk heterojunction blend systems. PMID:27877771

An alternative approach to charge transport in semiconducting electrodes

NASA Technical Reports Server (NTRS)

Thomchick, J.; Buoncristiani, A. M.

1980-01-01

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Gas Sensors Based on Semiconducting Metal Oxide One-Dimensional Nanostructures

PubMed Central

Huang, Jin; Wan, Qing

2009-01-01

This article provides a comprehensive review of recent (2008 and 2009) progress in gas sensors based on semiconducting metal oxide one-dimensional (1D) nanostructures. During last few years, gas sensors based on semiconducting oxide 1D nanostructures have been widely investigated. Additionally, modified or doped oxide nanowires/nanobelts have also been synthesized and used for gas sensor applications. Moreover, novel device structures such as electronic noses and low power consumption self-heated gas sensors have been invented and their gas sensing performance has also been evaluated. Finally, we also point out some challenges for future investigation and practical application. PMID:22303154

Raman spectroscopy study and first-principles calculations of the interaction between nucleic acid bases and carbon nanotubes.

PubMed

Stepanian, Stepan G; Karachevtsev, Maksym V; Glamazda, Alexander Yu; Karachevtsev, Victor A; Adamowicz, L

2009-04-16

In this work, we have used Raman spectroscopy and quantum chemical methods (MP2 and DFT) to study the interactions between nucleic acid bases (NABs) and single-walled carbon nanotubes (SWCNT). We found that the appearance of the interaction between the nanotubes and the NABs is accompanied by a spectral shift of the high-frequency component of the SWCNT G band in the Raman spectrum to a lower frequency region. The value of this shift varies from 0.7 to 1.3 cm(-1) for the metallic nanotubes and from 2.1 to 3.2 cm(-1) for the semiconducting nanotubes. Calculations of the interaction energies between the NABs and a fragment of the zigzag(10,0) carbon nanotube performed at the MP2/6-31++G(d,p)[NABs atoms]|6-31G(d)[nanotube atoms] level of theory while accounting for the basis set superposition error during geometry optimization allowed us to order the NABs according to the increasing interaction energy value. The order is: guanine (-67.1 kJ mol(-1)) > adenine (-59.0 kJ mol(-1)) > cytosine (-50.3 kJ mol(-1)) approximately = thymine (-50.2 kJ mol(-1)) > uracil (-44.2 kJ mol(-1)). The MP2 equilibrium structures and the interaction energies were used as reference points in the evaluation of the ability of various functionals in the DFT method to predict those structures and energies. We showed that the M05, MPWB1K, and MPW1B95 density functionals are capable of correctly predicting the SWCNT-NAB geometries but not the interaction energies, while the M05-2X functional is capable of correctly predicting both the geometries and the interaction energies.

On prototypical wave transmission across a junction of waveguides with honeycomb structure

NASA Astrophysics Data System (ADS)

Sharma, Basant Lal

2018-02-01

An exact expression for the scattering matrix associated with a junction generated by partial unzipping along the zigzag direction of armchair tubes is presented. The assumed simple, but representative, model, for scalar wave transmission can be interpreted in terms of the transport of the out-of-plane phonons in the ribbon-side vis-a-vis the radial phonons in the tubular-side of junction, based on the nearest-neighbor interactions between lattice sites. The exact solution for the `bondlength' in `broken' versus intact bonds can be constructed via a standard application of the Wiener-Hopf technique. The amplitude distribution of outgoing phonons, far away from the junction on either side of it, is obtained in closed form by the mode-matching method; eventually, this leads to the provision of the scattering matrix. As the main result of the paper, a succinct and closed form expression for the accompanying reflection and transmission coefficients is provided along with a detailed derivation using the Chebyshev polynomials. Applications of the analysis presented in this paper include linear wave transmission in nanotubes, nanoribbons, and monolayers of honeycomb lattices containing carbon-like units.

Strain-induced bi-thermoelectricity in tapered carbon nanotubes

NASA Astrophysics Data System (ADS)

Algharagholy, L. A. A.; Pope, T.; Lambert, C. J.

2018-03-01

We show that carbon-based nanostructured materials are a novel testbed for controlling thermoelectricity and have the potential to underpin the development of new cost-effective environmentally-friendly thermoelectric materials. In single-molecule junctions, it is known that transport resonances associated with the discrete molecular levels play a key role in the thermoelectric performance, but such resonances have not been exploited in carbon nanotubes (CNTs). Here we study junctions formed from tapered CNTs and demonstrate that such structures possess transport resonances near the Fermi level, whose energetic location can be varied by applying strain, resulting in an ability to tune the sign of their Seebeck coefficient. These results reveal that tapered CNTs form a new class of bi-thermoelectric materials, exhibiting both positive and negative thermopower. This ability to change the sign of the Seebeck coefficient allows the thermovoltage in carbon-based thermoelectric devices to be boosted by placing CNTs with alternating-sign Seebeck coefficients in tandem.

Predicting excitonic gaps of semiconducting single-walled carbon nanotubes from a field theoretic analysis

DOE PAGES

Konik, Robert M.; Sfeir, Matthew Y.; Misewich, James A.

2015-02-17

We demonstrate that a non-perturbative framework for the treatment of the excitations of single walled carbon nanotubes based upon a field theoretic reduction is able to accurately describe experiment observations of the absolute values of excitonic energies. This theoretical framework yields a simple scaling function from which the excitonic energies can be read off. This scaling function is primarily determined by a single parameter, the charge Luttinger parameter of the tube, which is in turn a function of the tube chirality, dielectric environment, and the tube's dimensions, thus expressing disparate influences on the excitonic energies in a unified fashion. Asmore » a result, we test this theory explicitly on the data reported in [NanoLetters 5, 2314 (2005)] and [Phys. Rev. B 82, 195424 (2010)] and so demonstrate the method works over a wide range of reported excitonic spectra.« less

Computational Nanotechnology of Materials, Electronics and Machines: Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Srivastava, Deepak

2001-01-01

This report presents the goals and research of the Integrated Product Team (IPT) on Devices and Nanotechnology. NASA's needs for this technology are discussed and then related to the research focus of the team. The two areas of focus for technique development are: 1) large scale classical molecular dynamics on a shared memory architecture machine; and 2) quantum molecular dynamics methodology. The areas of focus for research are: 1) nanomechanics/materials; 2) carbon based electronics; 3) BxCyNz composite nanotubes and junctions; 4) nano mechano-electronics; and 5) nano mechano-chemistry.

An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter.

PubMed

Shulga, Artem G; Derenskyi, Vladimir; Salazar-Rios, Jorge Mario; Dirin, Dmitry N; Fritsch, Martin; Kovalenko, Maksym V; Scherf, Ullrich; Loi, Maria A

2017-09-01

The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I - capped PbS QDs (V th = 0.2 V, on/off = 10 5 , S S-th = 114 mV dec -1 , µ e = 0.22 cm 2 V -1 s -1 ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (V th = -0.2 V, on/off > 10 5 , S S-th = 63 mV dec -1 , µ h = 0.04 cm 2 V -1 s -1 ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV). © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

NASA Astrophysics Data System (ADS)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

PubMed Central

Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

2016-01-01

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

Magnetic nanotubes

DOEpatents

Matsui, Hiroshi; Matsunaga, Tadashi

2010-11-16

A magnetic nanotube includes bacterial magnetic nanocrystals contacted onto a nanotube which absorbs the nanocrystals. The nanocrystals are contacted on at least one surface of the nanotube. A method of fabricating a magnetic nanotube includes synthesizing the bacterial magnetic nanocrystals, which have an outer layer of proteins. A nanotube provided is capable of absorbing the nanocrystals and contacting the nanotube with the nanocrystals. The nanotube is preferably a peptide bolaamphiphile. A nanotube solution and a nanocrystal solution including a buffer and a concentration of nanocrystals are mixed. The concentration of nanocrystals is optimized, resulting in a nanocrystal to nanotube ratio for which bacterial magnetic nanocrystals are immobilized on at least one surface of the nanotubes. The ratio controls whether the nanocrystals bind only to the interior or to the exterior surfaces of the nanotubes. Uses include cell manipulation and separation, biological assay, enzyme recovery, and biosensors.

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

Surface physics of semiconducting nanowires

NASA Astrophysics Data System (ADS)

Amato, Michele; Rurali, Riccardo

2016-02-01

Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

Doping of Semiconducting Atomic Chains

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kutler, Paul (Technical Monitor)

1997-01-01

Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O

NASA Astrophysics Data System (ADS)

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V.; Pillai, Vijayamohanan K.

2014-07-01

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar

Charge Transport Processes in Molecular Junctions

NASA Astrophysics Data System (ADS)

Smith, Christopher Eugene

Molecular electronics (ME) has evolved into a rich area of exploration that combines the fields of chemistry, materials, electronic engineering and computational modeling to explore the physics behind electronic conduction at the molecular level. Through studying charge transport properties of single molecules and nanoscale molecular materials the field has gained the potential to bring about new avenues for the miniaturization of electrical components where quantum phenomena are utilized to achieve solid state molecular device functionality. Molecular junctions are platforms that enable these studies and consist of a single molecule or a small group of molecules directly connected to electrodes. The work presented in this thesis has built upon the current understanding of the mechanisms of charge transport in ordered junctions using self-assembled monolayer (SAM) molecular thin films. Donor and acceptor compounds were synthesized and incorporated into SAMs grown on metal substrates then the transport properties were measured with conducting probe atomic force microscopy (CP-AFM). In addition to experimentally measured current-voltage (I-V) curves, the transport properties were addressed computationally and modeled theoretically. The key objectives of this project were to 1) investigate the impact of molecular structure on hole and electron charge transport, 2) understand the nature of the charge carriers and their structure-transport properties through long (<4 nm) conjugated molecular wires, and 3) quantitatively extract interfacial properties characteristic to macroscopic junctions, such as energy level alignment and molecule-contact electronic coupling from experimental I-V curves. Here, we lay ground work for creating a more complete picture of charge transport in macroscopically ordered molecular junctions of controlled architecture, length and charge carrier. The polaronic nature of hopping transport has been predicted in long, conjugated molecular wires

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

PubMed

Long, Yun-Ze; Yu, Miao; Sun, Bin; Gu, Chang-Zhi; Fan, Zhiyong

2012-06-21

Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor-liquid-solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir-Blodgett assembly, bubble-blown technique, electric/magnetic- field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

Method and apparatus for casting conductive and semi-conductive materials

DOEpatents

Ciszek, T.F.

1984-08-13

A method and apparatus is disclosed for casting conductive and semi-conductive materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semi-conductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

Pyrolytic Carbon Coatings on Aligned Carbon Nanotube Assemblies and Fabrication of Advanced Carbon Nanotube/Carbon Composites

NASA Astrophysics Data System (ADS)

Faraji, Shaghayegh

growth of CNTs, from 40 to 100 nm. Infiltration of PyC into stacked layered sheets of aligned CNTs produced resilient foam-like materials that exhibited complete recovery from 90% compressive strain. PyC coated the junctions between nanotubes and also increased their surface roughness. These changes were assumed to be responsible for the resiliency of the, once inelastic, assembly of nanotubes. While nanotubes' alignment resulted in anisotropic properties of the foams, variation in PyC infiltration duration was used to tune the foams' properties. Further investigation into properties of these foams showed promising results for their application as pressure/strain sensor and selective liquid absorbers for oil spill clean ups. Finally, CNT foams were used as novel substrates for growth of secondary nanotube assemblies. In order to achieve that, foams were first coated with alumina buffer layers using atomic layer deposition (ALD) method. New nanotubes were further grown inside the foams by CVD of acetylene over iron nano-particles. Super low density and highly porous structure of the foams allowed for diffusion of catalyst along with growth gasses into their bulk, which resulted in growth of secondary nanotubes throughout the thickness of the foams. The thickness of the alumina buffer layer was shown to influence CNT nucleation density and growth uniformity across the thickness of the foams. Compressive mechanical testing of the foams showed an order of magnitude increase in compression strength after secondary CNT growth.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O.

PubMed

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V; Pillai, Vijayamohanan K

2014-08-07

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, "as grown" CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ∼ 470 μA cm(-2)) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.

Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

PubMed Central

Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

2009-01-01

A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage

PubMed Central

Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao; Qu, Jia; Wang, Zhong Lin; Dai, Liming

2015-01-01

One-dimensional (1D) carbon nanotubes (CNTs) and 2D single-atomic layer graphene have superior thermal, electrical, and mechanical properties. However, these nanomaterials exhibit poor out-of-plane properties due to the weak van der Waals interaction in the transverse direction between graphitic layers. Recent theoretical studies indicate that rationally designed 3D architectures could have desirable out-of-plane properties while maintaining in-plane properties by growing CNTs and graphene into 3D architectures with a seamless nodal junction. However, the experimental realization of seamlessly-bonded architectures remains a challenge. We developed a strategy of creating 3D graphene-CNT hollow fibers with radially aligned CNTs (RACNTs) seamlessly sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template. By controlling the aluminum wire diameter and anodization time, the length of the RACNTs and diameter of the graphene hollow fiber can be tuned, enabling efficient energy conversion and storage. These fibers, with a controllable surface area, meso-/micropores, and superior electrical properties, are excellent electrode materials for all-solid-state wire-shaped supercapacitors with poly(vinyl alcohol)/H2SO4 as the electrolyte and binder, exhibiting a surface-specific capacitance of 89.4 mF/cm2 and length-specific capacitance up to 23.9 mF/cm, — one to four times the corresponding record-high capacities reported for other fiber-like supercapacitors. Dye-sensitized solar cells, fabricated using the fiber as a counter electrode, showed a power conversion efficiency of 6.8% and outperformed their counterparts with an expensive Pt wire counter electrode by a factor of 2.5. These novel fiber-shaped graphene-RACNT energy conversion and storage devices are so flexible they can be woven into fabrics as power sources. PMID:26601246

Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage.

PubMed

Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao; Qu, Jia; Wang, Zhong Lin; Dai, Liming

2015-09-01

One-dimensional (1D) carbon nanotubes (CNTs) and 2D single-atomic layer graphene have superior thermal, electrical, and mechanical properties. However, these nanomaterials exhibit poor out-of-plane properties due to the weak van der Waals interaction in the transverse direction between graphitic layers. Recent theoretical studies indicate that rationally designed 3D architectures could have desirable out-of-plane properties while maintaining in-plane properties by growing CNTs and graphene into 3D architectures with a seamless nodal junction. However, the experimental realization of seamlessly-bonded architectures remains a challenge. We developed a strategy of creating 3D graphene-CNT hollow fibers with radially aligned CNTs (RACNTs) seamlessly sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template. By controlling the aluminum wire diameter and anodization time, the length of the RACNTs and diameter of the graphene hollow fiber can be tuned, enabling efficient energy conversion and storage. These fibers, with a controllable surface area, meso-/micropores, and superior electrical properties, are excellent electrode materials for all-solid-state wire-shaped supercapacitors with poly(vinyl alcohol)/H2SO4 as the electrolyte and binder, exhibiting a surface-specific capacitance of 89.4 mF/cm(2) and length-specific capacitance up to 23.9 mF/cm, - one to four times the corresponding record-high capacities reported for other fiber-like supercapacitors. Dye-sensitized solar cells, fabricated using the fiber as a counter electrode, showed a power conversion efficiency of 6.8% and outperformed their counterparts with an expensive Pt wire counter electrode by a factor of 2.5. These novel fiber-shaped graphene-RACNT energy conversion and storage devices are so flexible they can be woven into fabrics as power sources.

Composites of multi-walled carbon nanotubes with polypropylene and thermoplastic olefin blends prepared by melt compounding

NASA Astrophysics Data System (ADS)

Petrie, Kyle G.

Composites of multi-walled carbon nanotubes (MWCNTs) with polypropylene (PP) and thermoplastic olefins (TPOs) were prepared by melt compounding. Two non-covalent functionalization methods were employed to improve nanotube dispersion and the resulting composite properties are reported. The first functionalization approach involved partial coating of the surface of the nanotubes with a hyperbranched polyethylene (HBPE). MWCNT functionalization with HBPE was only moderately successful in breaking up the large aggregates that formed upon melt mixing with PP. In spite of the formation of large aggregates, the samples were conductive above a percolation threshold of 7.3 wt%. MWCNT functionalization did not disrupt the electrical conductivity of the nanotubes. The composite strength was improved with addition of nanotubes, but ductility was severely compromised because of the existence of aggregates. The second method involved PP matrix functionalization with aromatic moieties capable of pi-pi interaction with MWCNT sidewalls. Various microscopy techniques revealed the addition of only 25 wt% of PP-g-pyridine (Py) to the neat PP was capable of drastically reducing nanotube aggregate size and amount. Raman spectroscopy confirmed improved polymer/nanotube interaction with the PP-g-Py matrix. Electrical percolation threshold was obtained at a MWCNT loading of approximately 1.2 wt%. Electrical conductivity on the order of 10 -2 S/m was achieved, suggesting possible use in semi-conducting applications. Composite strength was improved upon addition of MWCNTs. The matrix functionalization with Py resulted in a significant improvement in composite ductility when filled with MWCNTs in comparison to its maleic anhydride (MA) counterpart. Preliminary investigations suggest that the use of alternating current (AC) electric fields may be effective in aligning nanotubes in PP to reduce the filler loading required for electrical percolation. Composites containing MWCNT within PP

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Kılıç, ćetin; Ciraci, S.

2017-02-01

Planar composite structures formed from the stripes of transition metal dichalcogenides joined commensurately along their zigzag or armchair edges can attain different states in a two-dimensional (2D), single-layer, such as a half metal, 2D or one-dimensional (1D) nonmagnetic metal and semiconductor. Widening of stripes induces metal-insulator transition through the confinements of electronic states to adjacent stripes, that results in the metal-semiconductor junction with a well-defined band lineup. Linear bending of the band edges of the semiconductor to form a Schottky barrier at the boundary between the metal and semiconductor is revealed. Unexpectedly, strictly 1D metallic states develop in a 2D system along the boundaries between stripes, which pins the Fermi level. Through the δ doping of a narrow metallic stripe one attains a nanowire in the 2D semiconducting sheet or narrow band semiconductor. A diverse combination of constituent stripes in either periodically repeating or finite-size heterostructures can acquire critical fundamental features and offer device capacities, such as Schottky junctions, nanocapacitors, resonant tunneling double barriers, and spin valves. These predictions are obtained from first-principles calculations performed in the framework of density functional theory.

Simultaneous synthesis of single-walled carbon nanotubes and graphene in a magnetically-enhanced arc plasma.

PubMed

Li, Jian; Shashurin, Alexey; Kundrapu, Madhusudhan; Keidar, Michael

2012-02-02

Carbon nanostructures such as single-walled carbon nanotubes (SWCNT) and graphene attract a deluge of interest of scholars nowadays due to their very promising application for molecular sensors, field effect transistor and super thin and flexible electronic devices(1-4). Anodic arc discharge supported by the erosion of the anode material is one of the most practical and efficient methods, which can provide specific non-equilibrium processes and a high influx of carbon material to the developing structures at relatively higher temperature, and consequently the as-synthesized products have few structural defects and better crystallinity. To further improve the controllability and flexibility of the synthesis of carbon nanostructures in arc discharge, magnetic fields can be applied during the synthesis process according to the strong magnetic responses of arc plasmas. It was demonstrated that the magnetically-enhanced arc discharge can increase the average length of SWCNT (5), narrow the diameter distribution of metallic catalyst particles and carbon nanotubes (6), and change the ratio of metallic and semiconducting carbon nanotubes (7), as well as lead to graphene synthesis (8). Furthermore, it is worthwhile to remark that when we introduce a non-uniform magnetic field with the component normal to the current in arc, the Lorentz force along the J×B direction can generate the plasmas jet and make effective delivery of carbon ion particles and heat flux to samples. As a result, large-scale graphene flakes and high-purity single-walled carbon nanotubes were simultaneously generated by such new magnetically-enhanced anodic arc method. Arc imaging, scanning electron microscope (SEM), transmission electron microscope (TEM) and Raman spectroscopy were employed to analyze the characterization of carbon nanostructures. These findings indicate a wide spectrum of opportunities to manipulate with the properties of nanostructures produced in plasmas by means of controlling the

Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma

PubMed Central

Li, Jian; Shashurin, Alexey; Kundrapu, Madhusudhan; Keidar, Michael

2012-01-01

Carbon nanostructures such as single-walled carbon nanotubes (SWCNT) and graphene attract a deluge of interest of scholars nowadays due to their very promising application for molecular sensors, field effect transistor and super thin and flexible electronic devices1-4. Anodic arc discharge supported by the erosion of the anode material is one of the most practical and efficient methods, which can provide specific non-equilibrium processes and a high influx of carbon material to the developing structures at relatively higher temperature, and consequently the as-synthesized products have few structural defects and better crystallinity. To further improve the controllability and flexibility of the synthesis of carbon nanostructures in arc discharge, magnetic fields can be applied during the synthesis process according to the strong magnetic responses of arc plasmas. It was demonstrated that the magnetically-enhanced arc discharge can increase the average length of SWCNT 5, narrow the diameter distribution of metallic catalyst particles and carbon nanotubes 6, and change the ratio of metallic and semiconducting carbon nanotubes 7, as well as lead to graphene synthesis 8. Furthermore, it is worthwhile to remark that when we introduce a non-uniform magnetic field with the component normal to the current in arc, the Lorentz force along the J×B direction can generate the plasmas jet and make effective delivery of carbon ion particles and heat flux to samples. As a result, large-scale graphene flakes and high-purity single-walled carbon nanotubes were simultaneously generated by such new magnetically-enhanced anodic arc method. Arc imaging, scanning electron microscope (SEM), transmission electron microscope (TEM) and Raman spectroscopy were employed to analyze the characterization of carbon nanostructures. These findings indicate a wide spectrum of opportunities to manipulate with the properties of nanostructures produced in plasmas by means of controlling the arc

Biomedical Detection via Macro- and Nano-Sensors Fabricated with Metallic and Semiconducting Oxides

PubMed Central

Hahm, Jong-In

2013-01-01

Originally developed as gas sensors, the benefits of metallic and semiconducting oxide materials are now being realized in other areas of sensing, such as chemical, environmental, and biomedical monitoring and detection. Metallic and semiconducting oxides have continuously expanded their roles to date, and have also established their significance in biosensing by utilizing a variety of modes for signal generation and detection mechanism. These sensors are typically based either on their optical, electrochemical, electrical, gravimetric, acoustic, and magnetic properties for signal transduction. This article reviews such biosensors that employ metallic and semiconducting oxides as active sensing elements to detect nucleic acids, proteins, cells, and a variety of important biomarkers, both in thin film and one-dimensional forms. Specific oxide materials (Mx Oy ) examined comprehensively in this article include M = Fe, Cu, Si, Zn, Sn, In. The derivatives of these oxide materials resulting from incorporation of dopants are examined as well. The crystalline structures and unique properties that may be exploited for various biosensing applications are discussed, and recent efforts investigating the feasibility of using these oxide materials in biosensor technology are described. Key biosensor characteristics resulting from reduced dimensionality are overviewed under the motif of planar and one-dimensional sensors. This article also provides insight into current challenges facing biosensor applications for metallic and semiconducting oxides. In addition, future outlook in this particular field as well as different impacts on biology and medicine are addressed. PMID:23627064

Inorganic nanotubes.

PubMed

Tenne, Reshef; Rao, C N R

2004-10-15

Following the discovery of carbon fullerenes and carbon nanotubes, it was hypothesized that nanoparticles of inorganic compounds with layered (two-dimensional) structure, such as MoS(2), will not be stable against folding and form nanotubes and fullerene-like structures: IF. The synthesis of numerous other inorganic nanotubes has been reported in recent years. Various techniques for the synthesis of inorganic nanotubes, including high-temperature reactions and strategies based on 'chemie douce' (soft chemistry, i.e. low-temperature) processes, are described. First-principle, density functional theory based calculations are able to provide substantial information on the structure and properties of such nanotubes. Various properties of inorganic nanotubes, including mechanical, electronic and optical properties, are described in brief. Some potential applications of the nanotubes in tribology, protection against impact, (photo)catalysis, batteries, etc., are discussed.

Surface passivation of semiconducting oxides by self-assembled nanoparticles

PubMed Central

Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

2016-01-01

Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

Anomalous Coulomb oscillation in crossed carbon nanotubes

NASA Astrophysics Data System (ADS)

Baek, Seung Jae; Lee, Dongsu; Park, Seung Joo; Park, Yung Woo; Svensson, Johannes; Jonson, Mats; Campbell, Eleanor E. B.

2008-03-01

Single-walled carbon nanotube (SWCNT) crossed junctions separated by an insulating layer were fabricated to investigate the double quantum dot modulated by a single gate (DQD-sG). Anomalous Coulomb oscillations were observed on the lower CNT at low temperature, where the behavior was interpreted by the concept of a double quantum dot (DQD) system http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id =APPLAB000089000023233107000001&idtype=cvips&gifs=yes [1]. To understand it more clearly, we have intentionally fabricated crossed CNTs without oxide layer in between. The observed anomalous Coulomb oscillations indicate that the contact resistance between the two tubes becomes a potential barrier splitting the initial single QD into the DQD, and the back-gate modulates the energy levels of the DQD.

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

PubMed

Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

2015-03-25

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

Carbon Nanotube based Nanotechnolgy

NASA Astrophysics Data System (ADS)

Meyyappan, M.

2000-10-01

Carbon nanotube(CNT) was discovered in the early 1990s and is an off-spring of C60(the fullerene or buckyball). CNT, depending on chirality and diameter, can be metallic or semiconductor and thus allows formation of metal-semiconductor and semiconductor-semiconductor junctions. CNT exhibits extraordinary electrical and mechanical properties and offers remarkable potential for revolutionary applications in electronics devices, computing and data storage technology, sensors, composites, storage of hydrogen or lithium for battery development, nanoelectromechanical systems(NEMS), and as tip in scanning probe microscopy(SPM) for imaging and nanolithography. Thus the CNT synthesis, characterization and applications touch upon all disciplines of science and engineering. A common growth method now is based on CVD though surface catalysis is key to synthesis, in contrast to many CVD applications common in microelectronics. A plasma based variation is gaining some attention. This talk will provide an overview of CNT properties, growth methods, applications, and research challenges and opportunities ahead.

Betavoltaic effect in titanium dioxide nanotube arrays under build-in potential difference

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Chen, Ranbin; San, Haisheng; Liu, Guohua; Wang, Kaiying

2015-05-01

We report the fabrication of sandwich-type metal/TiO2 nanotube (TNT) array/metal structures as well as their betavoltaic effects under build-in voltage through contact potential difference. The sandwiched structure is integrated by immobilized TNT arrays on Ti foil with radioisotope 63Ni planar source on Ni substrate (Ni-63Ni/TNT array/Ti). Under irradiation of the 63Ni source with activity of 8 mCi, the structure (TNT diameter ∼ 130 nm, length ∼ 11 μm) presents optimum energy conversion efficiency of 7.30% with open-circuit voltage of 1.54 V and short-circuit current of 12.43 nA. The TNT arrays exhibit a highly potential for developing betavoltaic batteries due to its wide band gap and nanotube array configuration. The TNT-betavoltaic concept offers a facile solution for micro/nano electronics with high efficiency and long life-time instead of conventional planar junction-type batteries.

Extinction coefficients and purity of single-walled carbon nanotubes.

PubMed

Zhao, B; Itkis, M E; Niyogi, S; Hu, H; Perea, D E; Haddon, R C

2004-11-01

Single-walled carbon nanotubes (SWNTs) hold great promise for advanced applications in aerospace, electronics and medicine, yet these industries require materials with rigorous quality control. There are currently no accepted standards for quality assurance or quality control among the commercial suppliers of SWNTs. We briefly discuss the applicability of various techniques to measure SWNT purity and review, in detail, the advantages of near infrared (NIR) spectroscopy for the quantitative assessment of the bulk carbonaceous purity of SWNTs. We review the use of solution phase NIR spectroscopy for the analysis and characterization of a variety of carbon materials, emphasizing SWNTs produced by the electric arc (EA), laser oven (LO) and HiPco (HC) methods. We consider the applicability of Beer's law to carbon materials dispersed in dimethylformamide (DMF) and the effective extinction coefficients that are obtained from such dispersions. Analysis of the areal absorptivities of the second interband transition of semiconducting EA-produced SWNTs for a number of samples of differing purities has lead to an absolute molar extinction coefficient for the carbonaceous impurities in EA-produced SWNT samples. We conclude that NIR spectroscopy is the clear method of choice for the assessment of the bulk carbonaceous purity of EA-produced SWNTs, and we suggest that an absolute determination of the purity of SWNTs is within reach. Continued work in this area is expected to lead to a universal method for the assessment of the absolute bulk purity of SWNTs from all sources--such a development will be of great importance for nanotube science and for future customers for this product.

Tailoring (bio)chemical activity of semiconducting nanoparticles: critical role of deposition and aggregation.

PubMed

Chernyshova, Irina V; Ponnurangam, Sathish; Somasundaran, Ponisseril

2011-06-22

The impact of deposition and aggregation on (bio)chemical properties of semiconducting nanoparticles (NPs) is perhaps among the least studied aspects of aquatic chemistry of solids. Employing a combination of in situ FTIR and ex situ X-ray photoelectron spectroscopy (XPS) and using the Mn(II) oxygenation on hematite (α-Fe(2)O(3)) and anatase (TiO(2)) NPs as a model catalytic reaction, we discovered that the catalytic and sorption performance of the semiconducting NPs in the dark can be manipulated by depositing them on different supports or mixing them with other NPs. We introduce the electrochemical concept of the catalytic redox activity to explain the findings and to predict the effects of (co)aggregation and deposition on the catalytic and corrosion properties of ferric (hydr)oxides. These results offer new possibilities for rationally tailoring the technological performance of semiconducting metal oxide NPs, provide a new framework for modeling their fate and transport in the environment and living organisms, and can be helpful in discriminating between weakly and strongly adsorbed species in spectra.

Wigner molecules in carbon-nanotube quantum dots

NASA Astrophysics Data System (ADS)

Rontani, Massimo; Secchi, Andrea

2010-03-01

The paradigm of few-electron complexes in quantum dots (QDs) relies on the ``particle-in-a-box'' idea that lowest-energy orbitals are filled according to Pauli's exclusion principle. If Coulomb repulsion is sufficiently strong to overcome the kinetic energy cost of localization, a different scenario is predicted: a ``Wigner'' molecule (WM) forms, made of electrons frozen in space according to a geometrical pattern. Despite considerable experimental effort, evidence of the WM in semiconductor QDs has been elusive so far. Here we demonstrate theoretically that WMs occur in gate-defined QDs embedded in typical semiconducting carbon nanotubes (CNTs). Their signatures must be searched ---and indeed have already been observed [Deshpande and Bockrath, Nature Phys. 4, 314 (2008)] --- in tunneling spectra. Through exact diagonalisation (ED) calculations, we unveil the inherent features of the electron molecular states. We show that, like nuclei in a usual molecule, electrons have localized wave functions and hence negligible exchange interactions. The molecular excitations are vibrations around the equilibrium positions of electrons. ED results are well reproduced by an ansatz vibrational wave function, which provides a simple theoretical model for transport experiments in ultraclean CNTs.

Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

PubMed

Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

2015-05-26

Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

Nanotube Sensors

NASA Technical Reports Server (NTRS)

McEuen, Paul L.

2002-01-01

Under this project, we explored the feasibility of utilizing carbon nanotubes in sensing applications. The grant primarily supported a graduate student, who worked on a number of aspects of the electrical properties of carbon nanotubes in collaboration with other researchers in my group. The two major research accomplishments are described below. The first accomplishment is the demonstration that solution carbon nanotube transistors functioned well in an electrolyte environment. This was important for two reasons. First, it allowed us to explore the ultimate limits of nanotube electronic performance by using the electrolyte as a highly effective gate, with a dielectric constant of approximately 80 and an effective insulator thickness of approximately 1 nm. Second, it showed that nanotubes function well under biologically relevant conditions (salty water) and therefore offer great promise as biological sensors. The second accomplishment was the demonstration that a voltage pulse applied to an AFM tip could be used to electrically cut carbon nanotubes. We also showed that a carefully applied pulse could also 'nick' a nanotube, creating a tunnel barrier without completely breaking the tube. Nicking was employed to make, for example, a quantum dot within a nanotube.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

PubMed

Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

2015-09-30

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

PubMed Central

Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

2016-01-01

Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

The magnetic, relaxometric, and optical properties of gadolinium-catalyzed single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Sitharaman, Balaji; Jacobson, Barry D.; Wadghiri, Youssef Z.; Bryant, Henry; Frank, Joseph

2013-04-01

We report the magnetic behavior, relaxometry, phantom magnetic resonance imaging (MRI), and near-infrared (NIR) photoluminescence spectroscopy of gadolinium (Gd) catalyzed single-walled carbon nanotubes (Gd-SWCNTs). Gd-SWCNTs are paramagnetic with an effective magnetic moment of 7.29 μB. Gd-SWCNT solutions show high r1 and r2 relaxivities at very low (0.01 MHz) to clinically relevant (61 MHz) magnetic fields (r1 ≥ 130 mM-1 s-1, r2 ≥ 160 mM-1 s-1). Analysis of nuclear magnetic resonance dispersion profiles using Solomon, Bloembergen, and Morgan equations suggests that multiple structural and dynamic parameters such as rotational correlation time τR, rate of water exchange τM, and the number of fast-exchanging water molecules within the inner sphere q may be responsible for the increase in r1 and r2 relaxivity. The T1 weighted MRI signal intensity (gradient echo sequence; repetition time (TR) = 66 ms, echo time (TE) = 3 ms, flop angle = 108°) of Gd-SWCNT phantom solution is 14 times greater than the Gd-based clinical MRI contrast agent Magnevist. Additionally, these nanotubes exhibit near infrared fluorescence with distinct E11 transitions of several semiconducting SWCNTs. Taken together, these results demonstrate that Gd-SWCNTs have potential as a novel, highly efficacious, multimodal MRI-NIR optical imaging contrast agent.

Organic small molecule semiconducting chromophores for use in organic electronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Welch, Gregory C.; Hoven, Corey V.; Nguyen, Thuc-Quyen

Small organic molecule semi-conducting chromophores containing a pyridalthiadiazole, pyridaloxadiazole, or pyridaltriazole core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

Functional materials based on carbon nanotubes: Carbon nanotube actuators and noncovalent carbon nanotube modification

NASA Astrophysics Data System (ADS)

Fifield, Leonard S.

Carbon nanotubes have attractive inherent properties that encourage the development of new functional materials and devices based on them. The use of single wall carbon nanotubes as electromechanical actuators takes advantage of the high mechanical strength, surface area and electrical conductivity intrinsic to these molecules. The work presented here investigates the mechanisms that have been discovered for actuation of carbon nanotube paper: electrostatic, quantum chemical charge injection, pneumatic and viscoelastic. A home-built apparatus for the measurement of actuation strain is developed and utilized in the investigation. An optical fiber switch, the first demonstrated macro-scale device based on the actuation of carbon nanotubes, is described and its performance evaluated. Also presented here is a new general process designed to modify the surface of carbon nanotubes in a non-covalent, non-destructive way. This method can be used to impart new functionalities to carbon nanotube samples for a variety of applications including sensing, solar energy conversion and chemical separation. The process described involves the achievement of large degrees of graphitic surface coverage with polycyclic aromatic hydrocarbons through the use of supercritical fluids. These molecules are bifunctional agents that anchor a desired chemical group to the aromatic surface of the carbon nanotubes without adversely disrupting the conjugated backbone that gives rise the attractive electronic and physical properties of the nanotubes. Both the nanotube functionalization work and the actuator work presented here emphasize how an understanding and control of nanoscale structure and phenomena can be of vital importance in achieving desired performance for active materials. Opportunities for new devices with improved function over current state-of-the-art can be envisioned and anticipated based on this understanding and control.

Three-junction solar cell

DOEpatents

Ludowise, Michael J.

1986-01-01

A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

Two-dimensional semiconducting gold

NASA Astrophysics Data System (ADS)

Liu, Ning; Jin, Shifeng; Guo, Liwei; Wang, Gang; Shao, Hezhu; Chen, Liang; Chen, Xiaolong

2017-04-01

We show that two-dimensional (2D) honeycomb gold (HG) could be thermodynamic and lattice dynamic stable owing in part to the relativistic effect and electronic configuration. HG exhibits a covalent characteristic in its bonding and is a semiconductor with an energy gap of 0.1 eV at the Brillouin zone K point caused by strong spin-orbit coupling. The gap can be further widened to about 0.3 eV if HG is tailored into nanoribbons with the armchair type of edges. In contrast, 2D close-packed gold (CPG) is metallic with a small effective mass. Both HG and CPG are more transparent to visible light than graphene. They are expected to outperform graphene as a semiconducting material in an electronic logic device and as a transparent conducting material in fabricating a display device, respectively.

Self-Assembly of Semiconducting-Plasmonic Gold Nanoparticles with Enhanced Optical Property for Photoacoustic Imaging and Photothermal Therapy

PubMed Central

Yang, Zhen; Song, Jibin; Dai, Yunlu; Chen, Jingyi; Wang, Feng; Lin, Lisen; Liu, Yijing; Zhang, Fuwu; Yu, Guocan; Zhou, Zijian; Fan, Wenpei; Huang, Wei; Fan, Quli; Chen, Xiaoyuan

2017-01-01

Although various noble metal and semiconducting molecules have been developed as photoacoustic (PA) agents, the use of semiconducting polymer-metal nanoparticle hybrid materials to enhance PA signal has not been explored. A novel semiconducting-plasmonic nanovesicle was fabricated by self-assembly of semiconducting poly(perylene diimide) (PPDI) and poly(ethylene glycol (PEG) tethered gold nanoparticles (Au@PPDI/PEG). A highly localized and strongly enhanced electromagnetic (EM) field is distributed between adjacent gold nanoparticles in the vesicular shell, where the absorbing collapsed PPDI is present. Significantly, the EM field in turn enhances the light absorption efficiency of PPDI, leading to a much greater photothermal effect and a stronger photoacoustic signal compared to PDI nanoparticle or gold nanovesicle alone. The optical property of the hybrid vesicle can be further tailored by controlling the ratio of PPDI and gold nanoparticle as well as the adjustable interparticle distance of gold nanoparticles localized in the vesicular shell. In vivo imaging and therapeutic evaluation demonstrated that the hybrid vesicle is an excellent probe for cancer theranostics. PMID:28740543

Self-Assembly of Semiconducting-Plasmonic Gold Nanoparticles with Enhanced Optical Property for Photoacoustic Imaging and Photothermal Therapy.

PubMed

Yang, Zhen; Song, Jibin; Dai, Yunlu; Chen, Jingyi; Wang, Feng; Lin, Lisen; Liu, Yijing; Zhang, Fuwu; Yu, Guocan; Zhou, Zijian; Fan, Wenpei; Huang, Wei; Fan, Quli; Chen, Xiaoyuan

2017-01-01

Although various noble metal and semiconducting molecules have been developed as photoacoustic (PA) agents, the use of semiconducting polymer-metal nanoparticle hybrid materials to enhance PA signal has not been explored. A novel semiconducting-plasmonic nanovesicle was fabricated by self-assembly of semiconducting poly(perylene diimide) (PPDI) and poly(ethylene glycol (PEG) tethered gold nanoparticles (Au@PPDI/PEG). A highly localized and strongly enhanced electromagnetic (EM) field is distributed between adjacent gold nanoparticles in the vesicular shell, where the absorbing collapsed PPDI is present. Significantly, the EM field in turn enhances the light absorption efficiency of PPDI, leading to a much greater photothermal effect and a stronger photoacoustic signal compared to PDI nanoparticle or gold nanovesicle alone. The optical property of the hybrid vesicle can be further tailored by controlling the ratio of PPDI and gold nanoparticle as well as the adjustable interparticle distance of gold nanoparticles localized in the vesicular shell. In vivo imaging and therapeutic evaluation demonstrated that the hybrid vesicle is an excellent probe for cancer theranostics.

Carbon nanotube modified probes for stable and high sensitivity conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Slattery, Ashley D.; Shearer, Cameron J.; Gibson, Christopher T.; Shapter, Joseph G.; Lewis, David A.; Stapleton, Andrew J.

2016-11-01

Conductive atomic force microscopy (C-AFM) is used to characterise the nanoscale electrical properties of many conducting and semiconducting materials. We investigate the effect of single walled carbon nanotube (SWCNT) modification of commercial Pt/Ir cantilevers on the sensitivity and image stability during C-AFM imaging. Pt/Ir cantilevers were modified with small bundles of SWCNTs via a manual attachment procedure and secured with a conductive platinum pad. AFM images of topography and current were collected from heterogeneous polymer and nanomaterial samples using both standard and SWCNT modified cantilevers. Typically, achieving a good current image comes at the cost of reduced feedback stability. In part, this is due to electrostatic interaction and increased tip wear upon applying a bias between the tip and the sample. The SWCNT modified tips displayed superior current sensitivity and feedback stability which, combined with superior wear resistance of SWCNTs, is a significant advancement for C-AFM.

Gas phase synthesis of non-bundled, small diameter single-walled carbon nanotubes with near-armchair chiralities

NASA Astrophysics Data System (ADS)

Mustonen, K.; Laiho, P.; Kaskela, A.; Zhu, Z.; Reynaud, O.; Houbenov, N.; Tian, Y.; Susi, T.; Jiang, H.; Nasibulin, A. G.; Kauppinen, E. I.

2015-07-01

We present a floating catalyst synthesis route for individual, i.e., non-bundled, small diameter single-walled carbon nanotubes (SWCNTs) with a narrow chiral angle distribution peaking at high chiralities near the armchair species. An ex situ spark discharge generator was used to form iron particles with geometric number mean diameters of 3-4 nm and fed into a laminar flow chemical vapour deposition reactor for the continuous synthesis of long and high-quality SWCNTs from ambient pressure carbon monoxide. The intensity ratio of G/D peaks in Raman spectra up to 48 and mean tube lengths up to 4 μm were observed. The chiral distributions, as directly determined by electron diffraction in the transmission electron microscope, clustered around the (n,m) indices (7,6), (8,6), (8,7), and (9,6), with up to 70% of tubes having chiral angles over 20°. The mean diameter of SWCNTs was reduced from 1.10 to 1.04 nm by decreasing the growth temperature from 880 to 750 °C, which simultaneously increased the fraction of semiconducting tubes from 67% to 80%. Limiting the nanotube gas phase number concentration to ˜105 cm-3 prevented nanotube bundle formation that is due to collisions induced by Brownian diffusion. Up to 80% of 500 as-deposited tubes observed by atomic force and transmission electron microscopy were individual. Transparent conducting films deposited from these SWCNTs exhibited record low sheet resistances of 63 Ω/□ at 90% transparency for 550 nm light.

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

PubMed

Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells

DOE PAGES

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; ...

2017-11-10

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p–n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generatemore » and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Thus, findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells.« less

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p–n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generatemore » and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Thus, findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells.« less

Molecular Strategies for Morphology Control in Semiconducting Polymers for Optoelectronics.

PubMed

Rahmanudin, Aiman; Sivula, Kevin

2017-06-28

Solution-processable semiconducting polymers have been explored over the last decades for their potential applications in inexpensively fabricated transistors, diodes and photovoltaic cells. However, a remaining challenge in the field is to control the solid-state self-assembly of polymer chains in thin films devices, as the aspects of (semi)crystallinity, grain boundaries, and chain entanglement can drastically affect intra-and inter-molecular charge transport/transfer and thus device performance. In this short review we examine how the aspects of molecular weight and chain rigidity affect solid-state self-assembly and highlight molecular engineering strategies to tune thin film morphology. Side chain engineering, flexibly linking conjugation segments, and block co-polymer strategies are specifically discussed with respect to their effect on field effect charge carrier mobility in transistors and power conversion efficiency in solar cells. Example systems are taken from recent literature including work from our laboratories to illustrate the potential of molecular engineering semiconducting polymers.

Gap Junctions

PubMed Central

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Constitutive Modeling of Nanotube/Polymer Composites with Various Nanotube Orientations

NASA Technical Reports Server (NTRS)

Odegard, Gregory M.; Gates, Thomas S.

2002-01-01

In this study, a technique has been proposed for developing constitutive models for polymer composite systems reinforced with single-walled carbon nanotubes (SWNT) with various orientations with respect to the bulk material coordinates. A nanotube, the local polymer adjacent to the nanotube, and the nanotube/polymer interface have been modeled as an equivalent-continuum fiber by using an equivalent-continuum modeling method. The equivalent-continuum fiber accounts for the local molecular structure and bonding information and serves as a means for incorporating micromechanical analyses for the prediction of bulk mechanical properties of SWNT/polymer composite. As an example, the proposed approach is used for the constitutive modeling of a SWNT/LaRC-SI (with a PmPV interface) composite system, with aligned nanotubes, three-dimensionally randomly oriented nanotubes, and nanotubes oriented with varying degrees of axisymmetry. It is shown that the Young s modulus is highly dependent on the SWNT orientation distribution.

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A (Inventor)

2015-01-01

A multi junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2016-01-01

A multi-junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE PAGES

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; ...

2015-09-09

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Xu; Islam, Ahmad E.; Seabron, Eric

2015-04-07

Aligned arrays of semiconducting single-walled carbon nanotubes (s-SWNTs) represent ideal configurations for use of this class of material in high performance electronics. Development of means for removing the metallic SWNTs (m-SWNTs) in as-grown arrays represents an essential challenge. Here, we introduce a simple scheme that achieves this type of purification using direct, selective current injection through interdigitated electrodes into the m-SWNTs, to allow their complete removal using processes of thermocapillarity and dry etching. Experiments and numerical simulations establish the fundamental aspects that lead to selectivity in this process, thereby setting design rules for optimization. Single-step purification of arrays that includemore » thousands of SWNTs demonstrates the effectiveness and simplicity of the procedures. The result is a practical route to large-area aligned arrays of purely s-SWNTs with low-cost experimental setups.« less

First-Principles Predictions of Near-Edge X-ray Absorption Fine Structure Spectra of Semiconducting Polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Gregory M.; Patel, Shrayesh N.; Pemmaraju, C. D.

The electronic structure and molecular orientation of semiconducting polymers in thin films determine their ability to transport charge. Methods based on near-edge X-ray absorption fine structure (NEXAFS) spectroscopy can be used to probe both the electronic structure and microstructure of semiconducting polymers in both crystalline and amorphous films. However, it can be challenging to interpret NEXAFS spectra on the basis of experimental data alone, and accurate, predictive calculations are needed to complement experiments. Here, we show that first-principles density functional theory (DFT) can be used to model NEXAFS spectra of semiconducting polymers and to identify the nature of transitions inmore » complicated NEXAFS spectra. Core-level X-ray absorption spectra of a set of semiconducting polymers were calculated using the excited electron and core-hole (XCH) approach based on constrained-occupancy DFT. A comparison of calculations on model oligomers and periodic structures with experimental data revealed the requirements for accurate prediction of NEXAFS spectra of both conjugated homopolymers and donor–acceptor polymers. The NEXAFS spectra predicted by the XCH approach were applied to study molecular orientation in donor–acceptor polymers using experimental spectra and revealed the complexity of using carbon edge spectra in systems with large monomeric units. The XCH approach has sufficient accuracy in predicting experimental NEXAFS spectra of polymers that it should be considered for design and analysis of measurements using soft X-ray techniques, such as resonant soft X-ray scattering and scanning transmission X-ray microscopy.« less

Hydrothermal process assists undoped and Cr-doped semiconducting ZnO nanorods: Frontier of dielectric property

NASA Astrophysics Data System (ADS)

Debnath, Tanumoy; Saha, Papiya; Patra, Nesla; Das, Sukhen; Sutradhar, Soumyaditya

2018-05-01

The influence of the hydrothermal synthesis route on the grain morphology and thereby the modulation of dielectric response of undoped and Cr3+ ion doped semiconducting ZnO nanoparticles is investigated in this report. The X-ray diffraction study reveals that all the samples are in a polycrystalline single phase of a hexagonal wurtzite structure of ZnO. The field emission scanning electron microscopy study reveals the rod like structure of all the samples. The formation of synthesis route dependent morphology and the morphology dependent physical property of all the samples are the characteristic features of the present work and to date it has not been considered as the specific tool of dielectric property modulation by anyone else. The ultraviolet-visible measurement signifies the superior control over the charge density of the host semiconducting material due to the presence of Cr3+ ions in the structure of ZnO. In the photoluminescence measurement, no significant peak has been observed in the visible region. The frequency and temperature dependent dielectric constants of all the samples were investigated. The consequences of the dielectric measurement suggest that the hydrothermal synthesis route influences the growth mechanism of the semiconducting nanoparticles mostly towards the rod like structure and the doping element influences the charge density, nature of defects, and the defect densities inside the structure of ZnO nanomaterials. All these factors together make the semiconducting ZnO nanomaterials more effective for tailor made applications in magneto-dielectric devices.

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Heteroporphyrin nanotubes and composites

DOEpatents

Shelnutt, John A.; Medforth, Craig J.; Wang, Zhongchun

2006-11-07

Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.

Heteroporphyrin nanotubes and composites

DOEpatents

Shelnutt, John A [Tijeras, NM; Medforth, Craig J [Winters, CA; Wang, Zhongchun [Albuquerque, NM

2007-05-29

Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.

Recycling Strategy for Fabricating Low-Cost and High-Performance Carbon Nanotube TFT Devices.

PubMed

Yu, Xiaoqin; Liu, Dan; Kang, Lixing; Yang, Yi; Zhang, Xiaopin; Lv, Qianjin; Qiu, Song; Jin, Hehua; Song, Qijun; Zhang, Jin; Li, Qingwen

2017-05-10

High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated polymer wrapping. However, further purification of sorted s-SWNTs and high costs of raw materials are still challenges to practical applications. It is inevitable that a lot of polymers still cover the surface of s-SWNTs after separation, and the cost of the polymer is relatively higher than that of SWNTs. Here, we demonstrated a facile isolated process to improve the quality of s-SWNT solutions and films significantly. Compared with the untreated s-SWNTs, the contact resistance between the s-SWNT and the electrode is reduced by 20 times, and the thin-film transistors show 300% enhancement of current density. In this process, most of the polymers can be recycled and reused directly without any purification, which can greatly decrease the cost for s-SWNT separation. The results presented herein demonstrate a new scalable and low-cost approach for large-scale application of s-SWNTs in the electronics industry.

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes.

PubMed

Xie, Xu; Jin, Sung Hun; Wahab, Muhammad A; Islam, Ahmad E; Zhang, Chenxi; Du, Frank; Seabron, Eric; Lu, Tianjian; Dunham, Simon N; Cheong, Hou In; Tu, Yen-Chu; Guo, Zhilin; Chung, Ha Uk; Li, Yuhang; Liu, Yuhao; Lee, Jong-Ho; Song, Jizhou; Huang, Yonggang; Alam, Muhammad A; Wilson, William L; Rogers, John A

2014-11-12

Recent progress in the field of single-walled carbon nanotubes (SWNTs) significantly enhances the potential for practical use of this remarkable class of material in advanced electronic and sensor devices. One of the most daunting challenges is in creating large-area, perfectly aligned arrays of purely semiconducting SWNTs (s-SWNTs). Here we introduce a simple, scalable, large-area scheme that achieves this goal through microwave irradiation of aligned SWNTs grown on quartz substrates. Microstrip dipole antennas of low work-function metals concentrate the microwaves and selectively couple them into only the metallic SWNTs (m-SWNTs). The result allows for complete removal of all m-SWNTs, as revealed through systematic experimental and computational studies of the process. As one demonstration of the effectiveness, implementing this method on large arrays consisting of ~20,000 SWNTs completely removes all of the m-SWNTs (~7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

Four-junction superconducting circuit

PubMed Central

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Microscopy of semiconducting materials

NASA Astrophysics Data System (ADS)

Pennycook, S. J.

1991-04-01

The purpose of the trip was to present an invited talk at the 7th Oxford Conference on Microscopy of Semiconducting Materials entitled, High-Resolution Z-Contrast Imaging of Heterostructures and Superlattices, (Oxford, United Kingdom) and to visit VG Microscopes, East Grinstead, for discussions on the progress of the Oak Ridge National Laboratory (ORNL) 300-kV high-resolution scanning transmission electron microscope (STEM), which is currently on order. The traveler also visited three other institutions with 100-kV STEMs that either have or intend to purchase the necessary modifications to provide Z-contrast capability similar to that of the existing ORNL machine. Specifically, Max-Planck Institut fuer Metallforschung (Stuttgart, Germany); Cambridge University, Department of Materials Science and Metallurgy (Cambridge, United Kingdom); and Cavendish Laboratory, Cambridge University (Cambridge, United Kingdom) were visited. In addition, discussions were held with C. Humphreys on the possibility of obtaining joint funding for collaborative research involving electron beam writing and Z-contrast imaging in the Cambridge and Oak Ridge STEMs, respectively.

Nanotube phonon waveguide

DOEpatents

Chang, Chih-Wei; Zettl, Alexander K.

2013-10-29

Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

Production and Characterization of Carbon Nanotubes and Nanotube-Based Composites

NASA Technical Reports Server (NTRS)

Nikolaev, Pavel; Arepalli, Sivaram; Holmes, William; Gorelik, Olga; Files, Brad; Scott, Carl; Santos, Beatrice; Mayeaux, Brian; Victor, Joe

1999-01-01

The Nobel Prize winning discovery of the Buckuball (C60) in 1985 at Rice University by a group including Dr. Richard Smalley led to the whole new class of carbon allotropes including fullerenes and nanotubes. Especially interesting from many viewpoints are single-walled carbon nanotubes, which structurally are like a single graphitic sheet wrapped around a cylinder and capped at the ends. This cylinders have diameter as small as 0.5 - 2 nm (1/100,000th the diameter of a human hair) and are as long as 0.1 - 1 mm. Nanotubes are really individual molecules and believed to be defect-free, leading to high tensile strength despite their low density. Additionally, these fibers exhibit electrical conductivity as high as copper, thermal conductivity as high as diamond, strength 100 times higher than steel at one-sixth the weight, and high strain to failure. Thus it is believed that developments in the field of nanotechnology will lead to stronger and lighter composite materials for next generation spacecraft. Lack of a bulk method of production is the primary reason nanotubes are not used widely today. Toward this goal JSC nanotube team is exploring three distinct production techniques: laser ablation, arc discharge and chemical vapor deposition (CVD, in collaboration with Rice University). In laser ablation technique high-power laser impinges on the piece of carbon containing small amount of catalyst, and nanotubes self-assemble from the resulting carbon vapor. In arc generator similar vapor is created in arc discharge between carbon electrodes with catalyst. In CVD method nanotubes grow at much lower temperature on small catalyst particles from carbon-containing feedstock gas (methane or carbon monoxide). As of now, laser ablation produces cleanest material, but mass yield is rather small. Arc discharge produces grams of material, but purity is low. CVD technique is still in baby steps, but preliminary results look promising, as well as perspective of scaling the process

Laser Processing of Carbon Nanotube Transparent Conducting Films

NASA Astrophysics Data System (ADS)

Mann, Andrew

Transparent conducting films, or TCFs, are 2D electrical conductors with the ability to transmit light. Because of this, they are used in many popular electronics including smart phones, tablets, solar panels, and televisions. The most common material used as a TCF is indium tin oxide, or ITO. Although ITO has great electrical and optical characteristics, it is expensive, brittle, and difficult to pattern. These limitations have led researchers toward other materials for the next generation of displays and touch panels. The most promising material for next generation TCFs is carbon nanotubes, or CNTs. CNTs are cylindrical tubes of carbon no more than a few atoms thick. They have different electrical and optical properties depending on their atomic structure, and are extremely strong. As an electrode, they conduct electricity through an array of randomly dispersed tubes. The array is highly transparent because of gaps between the tubes, and size and optical properties of the CNTs. Many research groups have tried making CNT TCFs with opto-electric properties similar to ITO but have difficultly achieving high conductivity. This is partly attributed to impurities from fabrication and a mix of different tube types, but is mainly caused by low junction conductivity. In functionalized nanotubes, junction conductivity is impaired by covalently bonded molecules added to the sidewalls of the tubes. The addition of this molecule, known as functionalization, is designed to facilitate CNT dispersion in a solvent by adding properties of the molecule to the CNTs. While necessary for a good solution, functionalization decreases the conductivity in the CNT array by creating defects in the tube's structures and preventing direct inter-carbon bonding. This research investigates removing the functional coating (after tube deposition) by laser processing. Laser light is able to preferentially heat the CNTs because of their optical and electrical properties. Through local conduction

Thermodynamic determination of the metal/semiconductor separation of carbon nanotubes using hydrogels.

PubMed

Hirano, Atsushi; Tanaka, Takeshi; Kataura, Hiromichi

2012-11-27

The metal/semiconductor separation of single-wall carbon nanotubes (SWCNTs) using hydrogels, such as agarose gel and Sephacryl, together with sodium dodecyl sulfate is one of the most successful techniques necessary for industrial applications. Despite recent improvements in the technique, little is known about the separation mechanism. Here, we show that SWCNTs are reversibly adsorbed onto hydrogels in the presence of sodium dodecyl sulfate. The results enabled us to examine the thermodynamics of the adsorption reaction and thereby elucidate the separation mechanism. The adsorbability of SWCNTs onto the hydrogels was described by the standard Gibbs free energy for the adsorption, as well as the area of the hydrogels allowing the adsorption. We demonstrated, for the first time, that the free energy of adsorption for semiconducting SWCNTs was 0-12 kJ/mol lower than that for metallic SWCNTs in the temperature range of 290-320 K (e.g., ca. -4 kJ/mol for the agarose gel and ca. -9 kJ/mol for Sephacryl at 300 K), which permits metal/semiconductor separation. Importantly, the difference in the free energy was attributed to the difference in the enthalpy of adsorption: the enthalpy of adsorption of metallic SWCNTs was ca. 70 kJ/mol higher than that of semiconducting SWCNTs. Thus, the enthalpy of adsorption was found to be an important parameter in the metal/semiconductor separation of SWCNTs using hydrogels. In addition, the thermodynamic parameters depended on the hydrogel type and the surfactant concentration, which is most likely why under certain conditions hydrogels and surfactants produce different separations, e.g., chirality-selective or diameter-selective separation.

Ferromagnetism and semiconducting of boron nanowires

PubMed Central

2012-01-01

More recently, motivated by extensively technical applications of carbon nanostructures, there is a growing interest in exploring novel non-carbon nanostructures. As the nearest neighbor of carbon in the periodic table, boron has exceptional properties of low volatility and high melting point and is stronger than steel, harder than corundum, and lighter than aluminum. Boron nanostructures thus are expected to have broad applications in various circumstances. In this contribution, we have performed a systematical study of the stability and electronic and magnetic properties of boron nanowires using the spin-polarized density functional calculations. Our calculations have revealed that there are six stable configurations of boron nanowires obtained by growing along different base vectors from the unit cell of the bulk α-rhombohedral boron (α-B) and β-rhombohedral boron (β-B). Well known, the boron bulk is usually metallic without magnetism. However, theoretical results about the magnetic and electronic properties showed that, whether for the α-B-based or the β-B-based nanowires, their magnetism is dependent on the growing direction. When the boron nanowires grow along the base vector [001], they exhibit ferromagnetism and have the magnetic moments of 1.98 and 2.62 μB, respectively, for the α-c [001] and β-c [001] directions. Electronically, when the boron nanowire grows along the α-c [001] direction, it shows semiconducting and has the direct bandgap of 0.19 eV. These results showed that boron nanowires possess the unique direction dependence of the magnetic and semiconducting behaviors, which are distinctly different from that of the bulk boron. Therefore, these theoretical findings would bring boron nanowires to have many promising applications that are novel for the boron bulk. PMID:23244063

Semiconductor/High-Tc-Superconductor Hybrid ICs

NASA Technical Reports Server (NTRS)

Burns, Michael J.

1995-01-01

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

Electrical pumping and tuning of exciton-polaritons in carbon nanotube microcavities

NASA Astrophysics Data System (ADS)

Graf, Arko; Held, Martin; Zakharko, Yuriy; Tropf, Laura; Gather, Malte C.; Zaumseil, Jana

2017-09-01

Exciton-polaritons are hybrid light-matter particles that form upon strong coupling of an excitonic transition to a cavity mode. As bosons, polaritons can form condensates with coherent laser-like emission. For organic materials, optically pumped condensation was achieved at room temperature but electrically pumped condensation remains elusive due to insufficient polariton densities. Here we combine the outstanding optical and electronic properties of purified, solution-processed semiconducting (6,5) single-walled carbon nanotubes (SWCNTs) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical pumping of exciton-polaritons at room temperature with high current densities (>10 kA cm-2) and tunability in the near-infrared (1,060 nm to 1,530 nm). We demonstrate thermalization of SWCNT polaritons, exciton-polariton pumping rates ~104 times higher than in current organic polariton devices, direct control over the coupling strength (Rabi splitting) via the applied gate voltage, and a tenfold enhancement of polaritonic over excitonic emission. This powerful material-device combination paves the way to carbon-based polariton emitters and possibly lasers.

Emission color-tuned light-emitting diode microarrays of nonpolar In xGa 1–xN/GaN multishell nanotube heterostructures

DOE PAGES

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung; ...

2015-12-09

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

Half-cell potentials of semiconductive simple binary sulphides in aqueous solution

USGS Publications Warehouse

Sato, M.

1966-01-01

Theoretical consideration of the charge-transfer mechanism operative in cells with an electrode of a semiconductive binary compound leads to the conclusion that the half-cell potential of such a compound is not only a function of ionic activities in the electrolytic solution, but also a function of the activities of the component elements in the compound phase. The most general form of the electrode equation derived for such a compound with a formula MiXj which dissociates into Mj+ and Xi- ions in aqueous solution is. EMiXj = EMiXj0 + R T 2 ij ln [ (sua Mj+)aqi ?? (suaX)jMiXj/ (suaXi-)aqj ?? (suaM)iMiXj],. where. EMiXj0 = 1 2(EM,Mj+0 + EXi-,X). The equation can be modified to other forms. When applied to semiconductive simple binary sulphides, these equations appear to give better descriptions of the observed electrode potentials of such sulphides than any other proposed equations. ?? 1966.

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

PubMed

Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

2015-04-08

We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of nitrogen adsorption and transmission electron microscopy analyses for structural characterization of carbon nanotubes

NASA Astrophysics Data System (ADS)

Abbaslou, Reza Malek; Vosoughi, Vahid; Dalai, Ajay K.

2017-10-01

Carbon nanotubes (CNTs) are different from other porous substrates such as activated carbon due to their high external surfaces. This structural feature can lead in some uncertainties in the results of nitrogen adsorption analysis for characterization of CNTs. In this paper, the results of microscopic analyses and nitrogen adsorption method for characterization of carbon nanotubes were compared. Five different types of CNTs with different structures were either synthesized or purchased. The CNT samples were characterized by high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and N2 adsorption analysis. The comparisons between the results from the microscopic analyses and N2 adsorption showed that the total pore volume and BET surface measurements include the internal and external porosity of CNTs. Therefore, the interpretation of N2 adsorption data required accurate TEM analysis. In addition, the evaluation of pore size distribution curves from all CNT samples in this study and several instances in the literature revealed the presence of a common peak in the range of 2-5 nm. This peak does not explain the inner pore size distribution. The presence of this common peak can be attributed to the strong adsorption of N2 on the junction of touched and crossed nanotubes.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

PubMed

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

STM images of carbon-nanotube quantum dots: Seeing a Wigner molecule of correlated electrons

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2011-03-01

The paradigm of few-electron complexes in quantum dots (QDs) relies on the idea that the lowest quantized levels are filled according to Pauli's exclusion principle. If Coulomb repulsion is sufficiently strong to overcome the kinetic energy cost of localization, a different scenario is predicted: a ``Wigner'' molecule (WM) forms, made of electrons frozen in space according to a geometrical pattern. Despite considerable experimental effort, evidence of the WM in semiconductor QDs has been elusive so far. Here we demonstrate theoretically that WMs occur in gate-defined QDs embedded in typical semiconducting carbon nanotubes (CNTs). The unambiguous signatures of the WM state must be searched in the scanning tunneling microscopy (STM) images of the electrons. Through exact diagonalisation (ED) calculations, we unveil the inherent features of the electron molecular states. We show that, like nuclei in a usual molecule, electrons have localized wave functions and hence negligible exchange interactions. ED results for single and double QDs provide a simple interpretation for transport experiments in ultraclean CNTs.

Working Toward Nanotube Composites

NASA Technical Reports Server (NTRS)

Arepalli, Sivaram; Nikolaev, Pavel; Gorelik, Olga; Hadjiev, Victor G.; Scott, Carl D.; Files, Bradley S.

2001-01-01

One of the most attractive applications of single-wall carbon nanotubes (SWNT) is found in the area of structural materials. Nanotubes have a unique combination of high strength, modulus, and elongation to failure, and therefore have potential to significantly enhance the mechanical properties of today's composites. This is especially attractive for the aerospace industry looking for any chance to save weight. This is why NASA has chosen to tackle this difficult application of SWNT. Nanotube properties differ significantly from that of conventional carbon fibers, and a whole new set of problems, including adhesion and dispersion in the adhesive polymer matrix, must be resolved in order to engineer superior composite materials. From recent work on a variety of applications it is obvious that the wide range of research in nanotubes will lead to advances in physics, chemistry, and engineering. However, the possibility of ultralightweight structures is what causes dreamers to really get excited. One of the important issues in composite engineering is aspect ratio of the fibers, since it affects load transfer in composites. Nanotube length was a gray area for years, since they are formed in bundles, making it impossible to monitor individual nanotube length. Even though bundles are observed to be tens and hundreds of microns long, they can be built of relatively short tubes weakly bound by Van der Waals forces. Nanotube length can be affected by subsequent purification and ultrasound processing, which has been necessary in order to disperse nanotubes and introduce them into a polymer matrix. Some calculations show that nanotubes with 10(exp 5) aspect ratio may be necessary to achieve good load transfer. We show here that nanotubes produced in our laser system are as much as tens of microns long and get cut into lengths of hundreds of nanometers during ultrasound processing. Nanotube length was measured by AFM on pristine nanotube specimens as well, as after sonication

Exploring Carbon Nanotubes for Nanoscale Devices

NASA Technical Reports Server (NTRS)

Han, Jie; Dai; Anantram; Jaffe; Saini, Subhash (Technical Monitor)

1998-01-01

Carbon nanotubes (CNTs) are shown to promise great opportunities in nanoelectronic devices and nanoelectromechanical systems (NEMS) because of their inherent nanoscale sizes, intrinsic electric conductivities, and seamless hexagonal network architectures. I present our collaborative work with Stanford on exploring CNTs for nanodevices in this talk. The electrical property measurements suggest that metallic tubes are quantum wires. Furthermore, two and three terminal CNT junctions have been observed experimentally. We have proposed and studied CNT-based molecular switches and logic devices for future digital electronics. We also have studied CNTs based NEMS inclusing gears, cantilevers, and scanning probe microscopy tips. We investigate both chemistry and physics based aspects of the CNT NEMS. Our results suggest that CNT have ideal stiffness, vibrational frequencies, Q-factors, geometry-dependent electric conductivities, and the highest chemical and mechanical stabilities for the NEMS. The use of CNT SPM tips for nanolithography is presented for demonstration of the advantages of the CNT NEMS.

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells.

PubMed

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; Huang, Jing-Shun; Sfeir, Matthew Y; Reed, Mark A; Jung, Yeonwoong; Taylor, André D

2017-12-01

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p-n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generate and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-mobility ultrathin semiconducting films prepared by spin coating.

PubMed

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Carbon nanotube nanoelectrode arrays

DOEpatents

Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

2008-11-18

The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

NASA Astrophysics Data System (ADS)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Wrapping cytochrome c around single-wall carbon nanotube: engineered nanohybrid building blocks for infrared detection at high quantum efficiency

PubMed Central

Gong, Youpin; Liu, Qingfeng; Wilt, Jamie Samantha; Gong, Maogang; Ren, Shenqiang; Wu, Judy

2015-01-01

Biomolecule cytochrome c (Cty c), a small molecule of a chain of amino acids with extraordinary electron transport, was helically wrapped around a semiconductive single-wall carbon nanotube (s-SWCNT) to form a molecular building block for uncooled infrared detection with two uniquely designed functionalities: exciton dissociation to free charge carriers at the heterojunction formed on the s-SWCNT/Cty c interface and charge transport along the electron conducting chain of Cty c (acceptor) and hole conducting channel through s-SWCNT (donor). Such a design aims at addressing the long-standing challenges in exciton dissociation and charge transport in an SWCNT network, which have bottlenecked development of photonic SWCNT-based infrared detectors. Using these building blocks, uncooled s-SWCNT/Cyt c thin film infrared detectors were synthesized and shown to have extraordinary photoresponsivity up to 0.77 A W−1 due to a high external quantum efficiency (EQE) in exceeding 90%, which represents a more than two orders of magnitude enhancement than the best previously reported on CNT-based infrared detectors with EQE of only 1.72%. From a broad perspective, this work on novel s-SWCNT/Cyt c nanohybrid infrared detectors has developed a successful platform of engineered carbon nanotube/biomolecule building blocks with superior properties for optoelectronic applications. PMID:26066737

Wrapping cytochrome c around single-wall carbon nanotube: engineered nanohybrid building blocks for infrared detection at high quantum efficiency.

PubMed

Gong, Youpin; Liu, Qingfeng; Wilt, Jamie Samantha; Gong, Maogang; Ren, Shenqiang; Wu, Judy

2015-06-11

Biomolecule cytochrome c (Cty c), a small molecule of a chain of amino acids with extraordinary electron transport, was helically wrapped around a semiconductive single-wall carbon nanotube (s-SWCNT) to form a molecular building block for uncooled infrared detection with two uniquely designed functionalities: exciton dissociation to free charge carriers at the heterojunction formed on the s-SWCNT/Cty c interface and charge transport along the electron conducting chain of Cty c (acceptor) and hole conducting channel through s-SWCNT (donor). Such a design aims at addressing the long-standing challenges in exciton dissociation and charge transport in an SWCNT network, which have bottlenecked development of photonic SWCNT-based infrared detectors. Using these building blocks, uncooled s-SWCNT/Cyt c thin film infrared detectors were synthesized and shown to have extraordinary photoresponsivity up to 0.77 A W(-1) due to a high external quantum efficiency (EQE) in exceeding 90%, which represents a more than two orders of magnitude enhancement than the best previously reported on CNT-based infrared detectors with EQE of only 1.72%. From a broad perspective, this work on novel s-SWCNT/Cyt c nanohybrid infrared detectors has developed a successful platform of engineered carbon nanotube/biomolecule building blocks with superior properties for optoelectronic applications.

Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing.

PubMed

Strus, Mark C; Chiaramonti, Ann N; Kim, Young Lae; Jung, Yung Joon; Keller, Robert R

2011-07-01

We investigate the electrical reliability of nanoscale lines of highly aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find that these SWCNT networks can withstand DC current densities larger than 10 MA cm(-2) for several hours and, in some cases, several days. We develop test methods that show that the degradation rate, failure predictability and total device lifetime can be linked to the initial resistance. Scanning electron and transmission electron microscopy suggest that fabrication variability plays a critical role in the rate of degradation, and we offer an empirical method of quickly determining the long-term performance of a network. We find that well-fabricated lines subject to constant electrical stress show a linear accumulation of damage reminiscent of electromigration in metallic interconnects, and we explore the underlying physical mechanisms that could cause such behavior.

Ultralight anisotropic foams from layered aligned carbon nanotube sheets

NASA Astrophysics Data System (ADS)

Faraji, Shaghayegh; L. Stano, Kelly; Yildiz, Ozkan; Li, Ang; Zhu, Yuntian; Bradford, Philip D.

2015-10-01

In this work, we present large scale, ultralight aligned carbon nanotube (CNT) structures which have densities an order of magnitude lower than CNT arrays, have tunable properties and exhibit resiliency after compression. By stacking aligned sheets of carbon nanotubes and then infiltrating with a pyrolytic carbon (PyC), resilient foam-like materials were produced that exhibited complete recovery from 90% compressive strain. With density as low as 3.8 mg cm-3, the foam structure is over 500 times less dense than bulk graphite. Microscopy revealed that PyC coated the junctions among CNTs, and also increased CNT surface roughness. These changes in the morphology explain the transition from inelastic behavior to foam-like recovery of the layered CNT sheet structure. Mechanical and thermal properties of the foams were tuned for different applications through variation of PyC deposition duration while dynamic mechanical analysis showed no change in mechanical properties over a large temperature range. Observation of a large and linear electrical resistance change during compression of the aligned CNT/carbon (ACNT/C) foams makes strain/pressure sensors a relevant application. The foams have high oil absorption capacities, up to 275 times their own weight, which suggests they may be useful in water treatment and oil spill cleanup. Finally, the ACNT/C foam's high porosity, surface area and stability allow for demonstration of the foams as catalyst support structures.In this work, we present large scale, ultralight aligned carbon nanotube (CNT) structures which have densities an order of magnitude lower than CNT arrays, have tunable properties and exhibit resiliency after compression. By stacking aligned sheets of carbon nanotubes and then infiltrating with a pyrolytic carbon (PyC), resilient foam-like materials were produced that exhibited complete recovery from 90% compressive strain. With density as low as 3.8 mg cm-3, the foam structure is over 500 times less dense than

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Smart electronic yarns and wearable fabrics for human biomonitoring made by carbon nanotube coating with polyelectrolytes.

PubMed

Shim, Bong Sup; Chen, Wei; Doty, Chris; Xu, Chuanlai; Kotov, Nicholas A

2008-12-01

The idea of electronic yarns and textiles has appeared for quite some time, but their properties often do not meet practical expectations. In addition to chemicallmechanical durability and high electrical conductivity, important materials qualifications include weavablity, wearability, light weight, and "smart" functionalities. Here we demonstrate a simple process of transforming general commodity cotton threads into intelligent e-textiles using a polyelectrolyte-based coating with carbon nanotubes (CNTs). Efficient charge transport through the network of nanotubes (20 omega/cm) and the possibility to engineer tunneling junctions make them promising materials for many high-knowledge-content garments. Along with integrated humidity sensing, we demonstrate that CNT-cotton threads can be used to detect albumin, the key protein of blood, with high sensitivity and selectivity. Notwithstanding future challenges, these proof-of-concept demonstrations provide a direct pathway for the application of these materials as wearable biomonitoring and telemedicine sensors, which are simple, sensitive, selective, and versatile.

semiconducting nanostructures: morphology and thermoelectric properties

NASA Astrophysics Data System (ADS)

Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

2014-08-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Localized Charges Control Exciton Energetics and Energy Dissipation in Doped Carbon Nanotubes.

PubMed

Eckstein, Klaus H; Hartleb, Holger; Achsnich, Melanie M; Schöppler, Friedrich; Hertel, Tobias

2017-10-24

Doping by chemical or physical means is key for the development of future semiconductor technologies. Ideally, charge carriers should be able to move freely in a homogeneous environment. Here, we report on evidence suggesting that excess carriers in electrochemically p-doped semiconducting single-wall carbon nanotubes (s-SWNTs) become localized, most likely due to poorly screened Coulomb interactions with counterions in the Helmholtz layer. A quantitative analysis of blue-shift, broadening, and asymmetry of the first exciton absorption band also reveals that doping leads to hard segmentation of s-SWNTs with intrinsic undoped segments being separated by randomly distributed charge puddles approximately 4 nm in width. Light absorption in these doped segments is associated with the formation of trions, spatially separated from neutral excitons. Acceleration of exciton decay in doped samples is governed by diffusive exciton transport to, and nonradiative decay at charge puddles within 3.2 ps in moderately doped s-SWNTs. The results suggest that conventional band-filling in s-SWNTs breaks down due to inhomogeneous electrochemical doping.

Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

NASA Technical Reports Server (NTRS)

Tour, James M.; Dyke, Christopher A.; Maya, Francisco; Stewart, Michael P.; Chen, Bo; Flatt, Austen K.

2012-01-01

The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

Spectroscopic evidence for the origin of the dumbbell cyclic voltammogram of single-walled carbon nanotubes.

PubMed

Al-zubaidi, Ayar; Ishii, Yosuke; Yamada, Saki; Matsushita, Tomohiro; Kawasaki, Shinji

2013-12-21

We investigated the changes in charge carrier density responsible for the dumbbell-like cyclic voltammogram of single-walled carbon nanotubes (SWCNTs) used as electric double layer capacitor electrodes. We utilized in situ Raman spectroscopy of SWCNTs in the potential range where the dumbbell voltammogram is observed and electric double layer charging would be the dominant mechanism. The study revealed that, unexpectedly, the spectroscopic changes coinciding with the dumbbell steps on the voltammogram occur more sharply in metallic tubes, as seen from (1) the sudden enhancement in the intensity of the BWF Breit-Wigner-Fano (BWF) feature, (2) a considerably more significant frequency upshift of G(+) and G' bands, and (3) a drop in radial breathing mode intensity, compared to those in the spectra of semiconducting tubes. In addition, the spectroscopic changes observed with open-end SWCNT samples were more defined and correlated more accurately with the electronic structure of the tubes compared to those observed with closed-end SWCNTs.

Multi-Resolution Imaging of Electron Dynamics in Nanostructure Interfaces

DTIC Science & Technology

2010-07-27

metallic carbon nanotubes from semiconducting ones. In pentacene transistors, we used scanning photocurrent microscopy to study spatially resolved...photoelectric response of pentacene thin films, which showed that point contacts formed near the hole injection points limit the overall performance of the...photothermal current microscopy, carbon nanotube transistor, pentacene transistor, contact resistance, hole injection 16. SECURITY CLASSIFICATION OF

Carbon nanotubes on a substrate

DOEpatents

Gao, Yufei [Kennewick, WA; Liu, Jun [West Richland, WA

2002-03-26

The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube. The substrate is a conductive substrate coated with a growth catalyst, and the conductive filler can be single crystals of carbide formed by a solid state reaction between the substrate material and the growth catalyst. The present invention further provides a method for making the filled carbon nanotubes on the conductive substrates. The method includes the steps of depositing a growth catalyst onto the conductive substrate as a prepared substrate, creating a vacuum within a vessel which contains the prepared substrate, flowing H2/inert (e.g. Ar) gas within the vessel to increase and maintain the pressure within the vessel, increasing the temperature of the prepared substrate, and changing the H2/Ar gas to ethylene gas such that the ethylene gas flows within the vessel. Additionally, varying the density and separation of the catalyst particles on the conductive substrate can be used to control the diameter of the nanotubes.

Toward the Limits of Uniformity of Mixed Metallicity SWCNT TFT Arrays with Spark-Synthesized and Surface-Density-Controlled Nanotube Networks.

PubMed

Kaskela, Antti; Mustonen, Kimmo; Laiho, Patrik; Ohno, Yutaka; Kauppinen, Esko I

2015-12-30

We report the fabrication of thin film transistors (TFTs) from networks of nonbundled single-walled carbon nanotubes with controlled surface densities. Individual nanotubes were synthesized by using a spark generator-based floating catalyst CVD process. High uniformity and the control of SWCNT surface density were realized by mixing of the SWCNT aerosol in a turbulent flow mixer and monitoring the online number concentration with a condensation particle counter at the reactor outlet in real time. The networks consist of predominantly nonbundled SWCNTs with diameters of 1.0-1.3 nm, mean length of 3.97 μm, and metallic to semiconducting tube ratio of 1:2. The ON/OFF ratio and charge carrier mobility of SWCNT TFTs were simultaneously optimized through fabrication of devices with SWCNT surface densities ranging from 0.36 to 1.8 μm(-2) and channel lengths and widths from 5 to 100 μm and from 100 to 500 μm, respectively. The density optimized TFTs exhibited excellent performance figures with charge carrier mobilities up to 100 cm(2) V(-1) s(-1) and ON/OFF current ratios exceeding 1 × 10(6), combined with high uniformity and more than 99% of devices working as theoretically expected.

Josephson junction

DOEpatents

Wendt, J.R.; Plut, T.A.; Martens, J.S.

1995-05-02

A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

Carbon nanotube composite materials

DOEpatents

O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

2015-03-24

A material consisting essentially of a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes dissolved in a solvent. Un-functionalized carbon nanotube concentrations up to 30 wt % and hydroxylated carbon nanotube concentrations up to 40 wt % can be used with even small concentrations of each (less than 2 wt %) useful in producing enhanced conductivity properties of formed thin films.

Myosin-dependent remodeling of adherens junctions protects junctions from Snail-dependent disassembly

PubMed Central

Weng, Mo

2016-01-01

Although Snail is essential for disassembly of adherens junctions during epithelial–mesenchymal transitions (EMTs), loss of adherens junctions in Drosophila melanogaster gastrula is delayed until mesoderm is internalized, despite the early expression of Snail in that primordium. By combining live imaging and quantitative image analysis, we track the behavior of E-cadherin–rich junction clusters, demonstrating that in the early stages of gastrulation most subapical clusters in mesoderm not only persist, but move apically and enhance in density and total intensity. All three phenomena depend on myosin II and are temporally correlated with the pulses of actomyosin accumulation that drive initial cell shape changes during gastrulation. When contractile myosin is absent, the normal Snail expression in mesoderm, or ectopic Snail expression in ectoderm, is sufficient to drive early disassembly of junctions. In both cases, junctional disassembly can be blocked by simultaneous induction of myosin contractility. Our findings provide in vivo evidence for mechanosensitivity of cell–cell junctions and imply that myosin-mediated tension can prevent Snail-driven EMT. PMID:26754645

Mechanics of Nanotubes and Nanotube-Polymer Composites

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Wei, Cheng-Yu; Cho, Kyeong-Jae; Menon, Madhu; Osman, Mohamed; Biegel, Bryan A. (Technical Monitor)

2002-01-01

CNT is a tubular form of carbon with diameter as small as 1 nm. Length: few nm to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties: Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Amperometric Detection of Sub-ppm Formaldehyde Using Single-Walled Carbon Nanotubes and Hydroxylamines: A Referenced Chemiresistive System.

PubMed

Ishihara, Shinsuke; Labuta, Jan; Nakanishi, Takashi; Tanaka, Takeshi; Kataura, Hiromichi

2017-10-27

We report amperometric detection of formaldehyde (HCHO) using hydroxylamine hydrochloride and single-walled carbon nanotubes (SWCNTs). Hydroxylamine hydrochloride reacts with HCHO to emit HCl vapor, which injects a hole carrier into semiconducting SWCNTs. The increase of conductivity in SWCNTs is easily monitored using an ohmmeter. The debundling of SWCNTs with a metallo-supramolecular polymer (MSP) increased the active surface area in the SWCNTs network, leading to excellent sensitivity to HCHO with a limit of detection (LoD) of 0.016 ppm. The response of sensor is reversible, and the sensor is reusable. The selectivity to HCHO is 10 5 -10 6 times higher than interferences with other volatiles such as water, methanol, and toluene. Moreover, false-positive responses caused by a significant variation of humidity and/or temperature are successfully discriminated from true-positive responses by using two sensors, one with and the other without hydroxylamine hydrochloride, in a referenced system.

High frequency nanotube oscillator

DOEpatents

Peng, Haibing [Houston, TX; Zettl, Alexander K [Kensington, TX

2012-02-21

A tunable nanostructure such as a nanotube is used to make an electromechanical oscillator. The mechanically oscillating nanotube can be provided with inertial clamps in the form of metal beads. The metal beads serve to clamp the nanotube so that the fundamental resonance frequency is in the microwave range, i.e., greater than at least 1 GHz, and up to 4 GHz and beyond. An electric current can be run through the nanotube to cause the metal beads to move along the nanotube and changing the length of the intervening nanotube segments. The oscillator can operate at ambient temperature and in air without significant loss of resonance quality. The nanotube is can be fabricated in a semiconductor style process and the device can be provided with source, drain, and gate electrodes, which may be connected to appropriate circuitry for driving and measuring the oscillation. Novel driving and measuring circuits are also disclosed.

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics

PubMed Central

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; McGuire, Allister F.; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B.-H.; Bao, Zhenan

2017-01-01

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m2) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics. PMID:28461459

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

PubMed

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

2017-05-16

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m 2 ) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

Reinforced Carbon Nanotubes.

DOEpatents

Ren, Zhifen; Wen, Jian Guo; Lao, Jing Y.; Li, Wenzhi

2005-06-28

The present invention relates generally to reinforced carbon nanotubes, and more particularly to reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

Impact excitation and electron-hole multiplication in graphene and carbon nanotubes.

PubMed

Gabor, Nathaniel M

2013-06-18

In semiconductor photovoltaics, photoconversion efficiency is governed by a simple competition: the incident photon energy is either transferred to the crystal lattice (heat) or transferred to electrons. In conventional materials, energy loss to the lattice is more efficient than energy transferred to electrons, thus limiting the power conversion efficiency. Quantum electronic systems, such as quantum dots, nanowires, and two-dimensional electronic membranes, promise to tip the balance in this competition by simultaneously limiting energy transfer to the lattice and enhancing energy transfer to electrons. By exploring the optical, thermal, and electronic properties of quantum materials, we may perhaps find an ideal optoelectronic material that provides low cost fabrication, facile systems integration, and a means to surpass the standard limit for photoconversion efficiency. Nanoscale carbon materials, such as graphene and carbon nanotubes, provide ideal experimental quantum systems in which to explore optoelectronic behavior for applications in solar energy harvesting. Within essentially the same material, researchers can achieve a broad spectrum of energetic configurations, from a gapless semimetal to a large band-gap semiconducting nanowire. Owing to their nanoscale dimensions, graphene and carbon nanotubes exhibit electronic and optical properties that reflect strong electron-electron interactions. Such strong interactions may lead to exotic low-energy electron transport behavior and high-energy electron scattering processes such as impact excitation and the inverse process of Auger recombination. High-energy processes, which become very important under photoexcitation, may be particularly efficient in nanoscale carbon materials due to the relativistic-like, charged particle band structure and sensitivity to the dielectric environment. In addition, due to the covalently bonded carbon framework that makes up these materials, electron-phonon coupling is very weak

The Toxicology of Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Donaldson, Ken; Poland, Craig; Duffin, Rodger; Bonner, James

2012-06-01

1. Carbon nanotube structure, synthesis and applications C. Singh and W. Song; 2. The aerodynamic behaviour and pulmonary deposition of carbon nanotubes A. Buckley, R. Smith and R Maynard; 3. Utilising the concept of the biologically effective dose to define the particle and fibre hazards of carbon nanotubes K. Donaldson, R. Duffin, F. Murphy and C. Poland; 4. CNT, biopersistence and the fibre paradigm D. Warheit and M. DeLorme; 5. Length-dependent retention of fibres in the pleural space C. Poland, F. Murphy and K. Donaldson; 6. Experimental carcinogenicity of carbon nanotubes in the context of other fibres K. Unfried; 7. Fate and effects of carbon nanotubes following inhalation J. Ryman-Rasmussen, M. Andersen and J. Bonner; 8. Responses to pulmonary exposure to carbon nanotubes V. Castranova and R. Mercer; 9. Genotoxicity of carbon nanotubes R. Schins, C. Albrecht, K. Gerloff and D. van Berlo; 10. Carbon nanotube-cellular interactions; macrophages, epithelial and mesothelial cells V. Stone, M. Boyles, A. Kermanizadeh, J. Varet and H. Johnston; 11. Systemic health effects of carbon nanotubes following inhalation J. McDonald; 12. Dosimetry and metrology of carbon nanotubes L. Tran, L. MacCalman and R. Aitken; Index.

Ultralight anisotropic foams from layered aligned carbon nanotube sheets.

PubMed

Faraji, Shaghayegh; Stano, Kelly L; Yildiz, Ozkan; Li, Ang; Zhu, Yuntian; Bradford, Philip D

2015-10-28

In this work, we present large scale, ultralight aligned carbon nanotube (CNT) structures which have densities an order of magnitude lower than CNT arrays, have tunable properties and exhibit resiliency after compression. By stacking aligned sheets of carbon nanotubes and then infiltrating with a pyrolytic carbon (PyC), resilient foam-like materials were produced that exhibited complete recovery from 90% compressive strain. With density as low as 3.8 mg cm(-3), the foam structure is over 500 times less dense than bulk graphite. Microscopy revealed that PyC coated the junctions among CNTs, and also increased CNT surface roughness. These changes in the morphology explain the transition from inelastic behavior to foam-like recovery of the layered CNT sheet structure. Mechanical and thermal properties of the foams were tuned for different applications through variation of PyC deposition duration while dynamic mechanical analysis showed no change in mechanical properties over a large temperature range. Observation of a large and linear electrical resistance change during compression of the aligned CNT/carbon (ACNT/C) foams makes strain/pressure sensors a relevant application. The foams have high oil absorption capacities, up to 275 times their own weight, which suggests they may be useful in water treatment and oil spill cleanup. Finally, the ACNT/C foam's high porosity, surface area and stability allow for demonstration of the foams as catalyst support structures.

Predictive study of charge transport in disordered semiconducting polymers.

PubMed

Athanasopoulos, Stavros; Kirkpatrick, James; Martínez, Diego; Frost, Jarvist M; Foden, Clare M; Walker, Alison B; Nelson, Jenny

2007-06-01

We present a theoretical study of charge transport in disordered semiconducting polymers that relates the charge mobility to the chemical structure and the physical morphology in a novel multiscale approach. Our studies, focusing on poly(9,9-dioctylfluorene) (PFO), show that the charge mobility is dominated by pathways with the highest interchain charge-transfer rates. We also find that disorder is not always detrimental to charge transport. We find good agreement with experimental time-of-flight mobility data in highly aligned PFO films.

Electronic thermometry in tunable tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may bemore » measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.« less

A single-walled carbon nanotube thin film-based pH-sensing microfluidic chip.

PubMed

Li, Cheng Ai; Han, Kwi Nam; Pham, Xuan-Hung; Seong, Gi Hun

2014-04-21

A novel microfluidic pH-sensing chip was developed based on pH-sensitive single-walled carbon nanotubes (SWCNTs). In this study, the SWCNT thin film acted both as an electrode and a pH-sensitive membrane. The potentiometric pH response was observed by electronic structure changes in the semiconducting SWCNTs in response to the pH level. In a microfluidic chip consisting of a SWCNT pH-sensing working electrode and an Ag/AgCl reference electrode, the calibration plot exhibited promising pH-sensing performance with an ideal Nernstian response of 59.71 mV pH(-1) between pH 3 and 11 (standard deviation of the sensitivity is 1.5 mV pH(-1), R(2) = 0.985). Moreover, the SWCNT electrode in the microfluidic device showed no significant variation at any pH value in the range of the flow rate between 0.1 and 15 μl min(-1). The selectivity coefficients of the SWCNT electrode revealed good selectivity against common interfering ions.

Carbon nanotube filters

NASA Astrophysics Data System (ADS)

Srivastava, A.; Srivastava, O. N.; Talapatra, S.; Vajtai, R.; Ajayan, P. M.

2004-09-01

Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus (~25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

Carbon nanotube filters.

PubMed

Srivastava, A; Srivastava, O N; Talapatra, S; Vajtai, R; Ajayan, P M

2004-09-01

Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus ( approximately 25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

Carbon Nanotube Devices Engineered by Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Prisbrey, Landon

sensitivity to electric fields with very small detection volumes. In this work we demonstrate these devices as single-molecule sensors to detect individual N-(3-Dimethylaminopropyl)- N'-ethylcarbodiimide (EDC) molecules in an aqueous environment. An exciting application of these sensors is to study individual macromolecules participating in biological reactions, or undergoing conformational change. However, it is unknown whether the associated electrostatic signals exceed detection limits. We report calculations which reveal that enzymatic processes, such as substrate binding and internal protein dynamics, are detectable at the single-molecule level using existing atomic-sized transistors. Finally, we demonstrate the use of AFM-based engineering to control the function of nanoelectronic devices without creating a point defect in the sidewall of the nanotube. With a biased AFM probe we write charge patterns on a silicon dioxide surface in close proximity to a carbon nanotube device. The written charge induces image charges in the nearby electronics, and can modulate the Fermi level in a nanotube by +/-1 eV. We use this technique to induce a spatially controlled doping charge pattern in the conduction channel, and thereby reconfigure a field-effect transistor into a pn junction. Other simple charge patterns could be used to create other devices. The doping charge persists for days and can be erased and rewritten, offering a new tool for prototyping nanodevices and optimizing electrostatic doping profiles.

Tight junctions negatively regulate mechanical forces applied to adherens junctions in vertebrate epithelial tissue.

PubMed

Hatte, Guillaume; Prigent, Claude; Tassan, Jean-Pierre

2018-02-05

Epithelia are layers of polarised cells tightly bound to each other by adhesive contacts. Epithelia act as barriers between an organism and its external environment. Understanding how epithelia maintain their essential integrity while remaining sufficiently plastic to allow events such as cytokinesis to take place is a key biological problem. In vertebrates, the remodelling and reinforcement of adherens junctions maintains epithelial integrity during cytokinesis. The involvement of tight junctions in cell division, however, has remained unexplored. Here, we examine the role of tight junctions during cytokinesis in the epithelium of the Xenopus laevis embryo. Depletion of the tight junction-associated proteins ZO-1 and GEF-H1 leads to altered cytokinesis duration and contractile ring geometry. Using a tension biosensor, we show that cytokinesis defects originate from misregulation of tensile forces applied to adherens junctions. Our results reveal that tight junctions regulate mechanical tension applied to adherens junctions, which in turn impacts cytokinesis.This article has an associated First Person interview with the first author of the paper. © 2018. Published by The Company of Biologists Ltd.

Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

DOEpatents

Sharp, Kenneth G.; D'Errico, John J.

1988-01-01

The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

Dual Colorimetric and Fluorescent Authentication Based on Semiconducting Polymer Dots for Anticounterfeiting Applications.

PubMed

Tsai, Wei-Kai; Lai, Yung-Sheng; Tseng, Po-Jung; Liao, Chia-Hsien; Chan, Yang-Hsiang

2017-09-13

Semiconducting polymer dots (Pdots) have recently emerged as a novel type of ultrabright fluorescent probes that can be widely used in analytical sensing and material science. Here, we developed a dual visual reagent based on Pdots for anticounterfeiting applications. We first designed and synthesized two types of photoswitchable Pdots by incorporating photochromic dyes with multicolor semiconducting polymers to modulate their emission intensities and wavelengths. The resulting full-color Pdot assays showed that the colorimetric and fluorescent dual-readout abilities enabled the Pdots to serve as an anticounterfeiting reagent with low background interference. We also doped these Pdots into flexible substrates and prepared these Pdots as inks for pen handwriting as well as inkjet printing. We further applied this reagent in printing paper and checks for high-security anticounterfeiting purposes. We believe that this dual-readout method based on Pdots will create a new avenue for developing new generations of anticounterfeiting technologies.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

PubMed

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Field Emission Study of Carbon Nanotubes: High Current Density from Nanotube Bundle Arrays

NASA Technical Reports Server (NTRS)

Bronikowski, Micheal J.; Manohara, Harish M.; Siegel, Peter H.; Hunt, Brian D.

2004-01-01

We have investigated the field emission behavior of lithographically patterned bundles of multiwalled carbon nanotubes arranged in a variety of array geometries. Such arrays of nanotube bundles are found to perform significantly better in field emission than arrays of isolated nanotubes or dense, continuous mats of nanotubes, with the field emission performance depending on the bundle diameter and inter-bundle spacing. Arrays of 2-micrometers diameter nanotube bundles spaced 5 micrometers apart (edge-to-edge spacing) produced the largest emission densities, routinely giving 1.5 to 1.8 A/cm(sup 2) at approximately 4 V/micrometer electric field, and greater than 6 A/cm(sup 2) at 20 V/micrometers.

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

NASA Astrophysics Data System (ADS)

Filippi, M.; Kundys, B.; Ranjith, R.; Kundu, Asish K.; Prellier, W.

2008-05-01

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

Purification of carbon nanotubes via selective heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Wilson, William L.; Jin, Sung Hun

The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

Tight junctions and human diseases.

PubMed

Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

2003-09-01

Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

Inkjet Printing of Carbon Nanotubes

PubMed Central

Tortorich, Ryan P.; Choi, Jin-Woo

2013-01-01

In an attempt to give a brief introduction to carbon nanotube inkjet printing, this review paper discusses the issues that come along with preparing and printing carbon nanotube ink. Carbon nanotube inkjet printing is relatively new, but it has great potential for broad applications in flexible and printable electronics, transparent electrodes, electronic sensors, and so on due to its low cost and the extraordinary properties of carbon nanotubes. In addition to the formulation of carbon nanotube ink and its printing technologies, recent progress and achievements of carbon nanotube inkjet printing are reviewed in detail with brief discussion on the future outlook of the technology. PMID:28348344