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Sample records for semiconductor radiation-detector research

  1. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  2. Semiconductor radiation detector

    DOEpatents

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  3. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  4. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  5. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  6. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  7. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  8. Method and apparatus for electron-only radiation detectors from semiconductor materials

    SciTech Connect

    Lund, James C.

    2000-01-01

    A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

  9. PASSIVATION OF SEMICONDUCTOR SURFACES FOR IMPROVED RADIATION DETECTORS: X-RAY PHOTOEMISSION ANALYSIS

    SciTech Connect

    Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R; Payne, S

    2007-12-10

    Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH{sub 4}F/H{sub 2}O{sub 2} and NH{sub 4}OH solutions were used to etch, reduce and oxidize the surface of Cd{sub (1-x)}Zn{sub x}Te semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.

  10. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  11. Research on radiation detectors, boiling transients, and organic lubricants

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.

  12. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  13. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  14. RADIATION DETECTOR

    DOEpatents

    Wilson, H.N.; Glass, F.M.

    1960-05-10

    A radiation detector of the type is described wherein a condenser is directly connected to the electrodes for the purpose of performing the dual function of a guard ring and to provide capacitance coupling for resetting the detector system.

  15. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, Dimitrios C.

    1983-01-01

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

  16. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, D.C.

    1980-12-17

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips.

  17. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  18. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    SciTech Connect

    James, Ralph

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  19. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security.

  20. The development of a high count rate neutron flux monitoring channel using silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Reisi Fard, Mehdi

    In this dissertation, a fast neutron flux-monitoring channel, which is based on the use of SiC semiconductor detectors is designed, modeled and experimentally evaluated as a power monitor for the Gas Turbine Modular Helium Reactors. A detailed mathematical model of the SiC diode detector and the electronic processing channel is developed using TRIM, MATLAB and PSpice simulation codes. The flux monitoring channel is tested at the OSU Research Reactor. The response of the SiC neutron-monitoring channel to neutrons is in close agreement to simulation results. Linearity of the channel response to thermal and fast neutron fluxes, pulse height spectrum of the channel, energy calibration of the channel and the detector degradation in a fast neutron flux are presented. Along with the model of the neutron monitoring channel, a Simulink model of the GT-MHR core has been developed to evaluate the power monitoring requirements for the GT-MHR that are most demanding for the SiC diode power monitoring system. The Simulink model is validated against a RELAP5 model of the GT-MHR. This dyanamic model is used to simulate reactor transients at the full power and at the start up, in order to identify the response time requirements of the GT-MHR. Based on the response time requirements that have been identified by the Simulink model and properties of the monitoring channel, several locations in the central reflector and the reactor cavity are identified to place the detector. The detector lifetime and dynamic range of the monitoring channel at the detector locations are calculated. The channel dynamic range in the GT-MHR central reflector covers four decades of the reactor power. However, the detector does not survive for a reactor refueling cycle in the central reflector. In the reactor cavity, the detector operates sufficiently long; however, the dynamic range of the channel is smaller than the dynamic range of the channel in the central reflector.

  1. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2014-04-22

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  2. Adaptors for radiation detectors

    DOEpatents

    Livesay, Ronald Jason

    2015-07-28

    Described herein are adaptors and other devices for radiation detectors that can be used to make accurate spectral measurements of both small and large bulk sources of radioactivity, such as building structures, soils, vessels, large equipment, and liquid bodies. Some exemplary devices comprise an adaptor for a radiation detector, wherein the adaptor can be configured to collimate radiation passing through the adapter from an external radiation source to the radiation detector and the adaptor can be configured to enclose a radiation source within the adapter to allow the radiation detector to measure radiation emitted from the enclosed radiation source.

  3. Tin Can Radiation Detector.

    ERIC Educational Resources Information Center

    Crull, John L.

    1986-01-01

    Provides instructions for making tin can radiation detectors from empty aluminum cans, aluminum foil, clear plastic, copper wire, silica gel, and fine, unwaxed dental floss put together with tape or glue. Also provides suggestions for activities using the detectors. (JN)

  4. Radiation Detectors and Art

    NASA Astrophysics Data System (ADS)

    Denker, Andrea

    The use of radiation detectors in the analysis of art objects represents a very special application in a true interdisciplinary field. Radiation detectors employed in this field detect, e.g., x-rays, γ-rays, β particles, and protons. Analyzed materials range from stones, metals, over porcelain to paintings. The available nondestructive and noninvasive analytical methods cover a broad range of techniques. Hence, for the sake of brevity, this chapter will concentrate on few techniques: Proton Induced X-ray Emission (PIXE) and Proton Induced γ-ray Emission (PIGE).

  5. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus.

  6. Electromagnetic radiation detector

    DOEpatents

    Benson, Jay L.; Hansen, Gordon J.

    1976-01-01

    An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

  7. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  8. Handheld CZT radiation detector

    SciTech Connect

    Murray, William S.; Butterfield, Kenneth B.; Baird, William

    2004-08-24

    A handheld CZT radiation detector having a CZT gamma-ray sensor, a multichannel analyzer, a fuzzy-logic component, and a display component is disclosed. The CZT gamma-ray sensor may be a coplanar grid CZT gamma-ray sensor, which provides high-quality gamma-ray analysis at a wide range of operating temperatures. The multichannel analyzer categorizes pulses produce by the CZT gamma-ray sensor into channels (discrete energy levels), resulting in pulse height data. The fuzzy-logic component analyzes the pulse height data and produces a ranked listing of radioisotopes. The fuzzy-logic component is flexible and well-suited to in-field analysis of radioisotopes. The display component may be a personal data assistant, which provides a user-friendly method of interacting with the detector. In addition, the radiation detector may be equipped with a neutron sensor to provide an enhanced mechanism of sensing radioactive materials.

  9. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  10. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  11. Advanced Space Radiation Detector Technology Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

    2013-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

  12. Ionizing radiation detector

    DOEpatents

    Thacker, Louis H.

    1990-01-01

    An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

  13. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  14. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  15. Bismuth tri-iodide radiation detector development

    NASA Astrophysics Data System (ADS)

    Gokhale, Sasmit S.

    Bismuth tri-iodide is an attractive material for room temperature radiation detection. BiI3 demonstrates a number of properties that are apt for semiconductor radiation detection, especially gamma ray spectroscopy. The high atomic number (ZBi = 83 and ZI = 53) and the relatively high density (5.78 g/cm3) cause the material to have good photon stopping power, while the large band-gap (1.67 eV ) allows it to function as a room temperature radiation detector without any cooling mechanism. This work presents the fabrication and characterization of BiI3 radiation detectors. For the purpose of this research detectors were fabricated by cutting BiI3 crystal boules, followed by mechanical and chemical surface treatments. Detectors with various electrode geometries enabling single polarity charge sensing were fabricated. The electrical characteristics and the radiation response of the detectors were measured. The radiation response measurement was performed at room temperature using a 241Am alpha particle source and a 241Am sealed gamma-ray source. The spectral resolutions of the detectors varied from 2.09% - 6.1% for 59.5 keV gamma-rays and between 26% - 40% for 5.48 MeV alpha particles. Charge carrier properties such as the electron and hole mobility and lifetime were also estimated. The electron mobility for an ultrapure BiI 3 detector was estimated to be approximately 433 cm 2/Vs while that for antimony doped BiI3 was estimated to be around 956 cm2/Vs and the mobility-lifetime product for electrons was estimated to be around 5.44 x 10-4 cm 2/V. Detector simulation was performed using the Monte Carlo simulation code MCNP5. A Matlab script which incorporates charge carrier trapping and statistical variation was written to generate a gamma-ray spectrum from the simulated energy deposition spectra. Measured and simulated spectra were compared to extract the charge carrier mobility-lifetime products, which for electrons and holes were estimated to be 5 x 10-3 cm2/V and 1.3 x

  16. Semiconductor radiation detector with internal gain

    DOEpatents

    Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

    2003-04-01

    An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

  17. Portable Radiation Detectors

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Through a Small Business Innovation Research (SBIR) contract from Kennedy Space Center, General Pneumatics Corporation's Western Research Center satisfied a NASA need for a non-clogging Joule-Thomson cryostat to provide very low temperature cooling for various sensors. This NASA-supported cryostat development played a key part in the development of more portable high-purity geranium gamma-ray detectors. Such are necessary to discern between the radionuclides in medical, fuel, weapon, and waste materials. The outcome of the SBIR project is a cryostat that can cool gamma-ray detectors, without vibration, using compressed gas that can be stored compactly and indefinitely in a standby mode. General Pneumatics also produces custom J-T cryostats for other government, commercial and medical applications.

  18. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    SciTech Connect

    Golshani, Negin Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  19. Research coordination for power semiconductor technology

    SciTech Connect

    Hingorani, N.G.; Mehta, H. ); Levy, S. ); Temple, V.A.K.; Glascock, H. )

    1989-09-01

    A National Power Semiconductor Interagency/Utility Consortium has been formed to coordinate U.S. research activities for development of materials and technologies related to high-power semiconductors - a field sometimes called the second electronics revolution. The history, activities, and investment strategy of this Consortium are described briefly. A variety of the most promising power electronics devices considered by the Consortium are discussed, leading to the conclusion that field-effect transistors and Metal-Oxide Semiconductor (MOS) controlled thyristors (MCTs) will eventually dominate power-switching applications. New packaging techniques are also presented, in which silicon is used to replace bulky ceramic insulators and copper contacts - an arrangement that promises to lower costs and weight while improving devices performance and life. Finally, the article reviews policy issues related to power semiconductor research and recommends that R and D in this field be treated as a leading national priority.

  20. Low-Power Multi-Aspect Space Radiation Detector System

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave; Freeman, Jon C.; Burkebile, Stephen P.

    2012-01-01

    The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of all of these detector technologies will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the deep space radiation field.

  1. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  2. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  3. Plasma Panel Based Radiation Detectors

    SciTech Connect

    Friedman, Dr. Peter S.; Varner Jr, Robert L; Ball, Robert; Beene, James R; Ben Moshe, M.; Benhammou, Yan; Chapman, J. Wehrley; Etzion, E; Ferretti, Claudio; Bentefour, E; Levin, Daniel S.; Moshe, M.; Silver, Yiftah; Weaverdyck, Curtis; Zhou, Bing

    2013-01-01

    The plasma panel sensor (PPS) is a gaseous micropattern radiation detector under current development. It has many operational and fabrication principles common to plasma display panels (PDPs). It comprises a dense matrix of small, gas plasma discharge cells within a hermetically sealed panel. As in PDPs, it uses non-reactive, intrinsically radiation-hard materials such as glass substrates, refractory metal electrodes, and mostly inert gas mixtures. We are developing these devices primarily as thin, low-mass detectors with gas gaps from a few hundred microns to a few millimeters. The PPS is a high gain, inherently digital device with the potential for fast response times, fine position resolution (< 50 m RMS) and low cost. In this paper we report here on prototype PPS experimental results in detecting betas, protons and cosmic muons, and we extrapolate on the PPS potential for applications including detection of alphas, heavy-ions at low to medium energy, thermal neutrons and X-rays.

  4. International Semiconductor Device Research Symposium (ISDRS-93)

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  5. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  6. Alpha particle response study of polycrstalline diamond radiation detector

    NASA Astrophysics Data System (ADS)

    Kumar, Amit; Topkar, Anita

    2016-05-01

    Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

  7. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 2 2012-10-01 2012-10-01 false Exceptions for radiation detectors. 173.310... for radiation detectors. Radiation detectors, radiation sensors, electron tube devices, or ionization chambers, herein referred to as “radiation detectors,” that contain only Division 2.2 gases, are...

  8. Radiation detectors: needs and prospects

    SciTech Connect

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  9. Semiconductor research capabilities at the Lawrence Berkeley Laboratory

    SciTech Connect

    Not Available

    1987-02-01

    This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

  10. Space Research Results Purify Semiconductor Materials

    NASA Technical Reports Server (NTRS)

    2010-01-01

    While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

  11. Radiation hardness characteristics of Si-PIN radiation detectors

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low leakage current, high resistivity (>11 kΩ cm) and low capacitance for high-energy physics and X-ray spectroscopy. Floating-zone (FZ) 6-in. diameter N-type silicon wafers, with <1 1 1> crystal orientation and 675 μm thick, were used in the detector fabrication. The active areas are 3 mm×3 mm, 5 mm×5 mm and 10 mm×10 mm. We used a double deep-diffused structure at the edge of the active area for protection from the surface leakage path. We also compared the electrical performance of the Si-PIN detector with anti-reflective coating (ARC). For a detector with an active area of 3 mm×3 mm, the leakage current is about 1.9 nA and 7.4 nA at a 100 V reverse bias voltage, and 4.6 pF and 4.4 pF capacitance for the detector with and without an ARC, respectively. In addition, to compare the energy resolution in terms of radiation hardness, we measured the energy spectra with 57Co and 133Ba before the irradiation. Using developed preamplifiers (KAERI-PA1) that have ultra-low noise and high sensitivity, and a 3 mm×3 mm Si-PIN radiation detector, we obtained energy resolutions with 122 keV of 57Co and 81 keV of 133Ba of 0.221 keV and 0.261 keV, respectively. After 10, 100, 103, 104 and 105 Gy irradiation, we tested the characteristics of the radiation hardness on the Si-PIN radiation detectors in terms of electrical and energy spectra performance changes. The fabricated Si-PIN radiation detectors are working well under high dose irradiation conditions.

  12. Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Hitomi, K.; Murayama, T.; Shoji, T.; Suehiro, T.; Hiratate, Y.

    1999-06-01

    Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime ( μτ) product and the energy required to create an electron-hole pair (the ɛ value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV γ-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the ɛ value has been estimated to be about 5.85 eV for the TlBr crystal.

  13. Simple classical model for Fano statistics in radiation detectors

    NASA Astrophysics Data System (ADS)

    Jordan, David V.; Renholds, Andrea S.; Jaffe, John E.; Anderson, Kevin K.; René Corrales, L.; Peurrung, Anthony J.

    2008-02-01

    A simple classical model that captures the essential statistics of energy partitioning processes involved in the creation of information carriers (ICs) in radiation detectors is presented. The model pictures IC formation from a fixed amount of deposited energy in terms of the statistically analogous process of successively sampling water from a large, finite-volume container ("bathtub") with a small dipping implement ("shot or whiskey glass"). The model exhibits sub-Poisson variance in the distribution of the number of ICs generated (the "Fano effect"). Elementary statistical analysis of the model clarifies the role of energy conservation in producing the Fano effect and yields Fano's prescription for computing the relative variance of the IC number distribution in terms of the mean and variance of the underlying, single-IC energy distribution. The partitioning model is applied to the development of the impact ionization cascade in semiconductor radiation detectors. It is shown that, in tandem with simple assumptions regarding the distribution of energies required to create an (electron, hole) pair, the model yields an energy-independent Fano factor of 0.083, in accord with the lower end of the range of literature values reported for silicon and high-purity germanium. The utility of this simple picture as a diagnostic tool for guiding or constraining more detailed, "microscopic" physical models of detector material response to ionizing radiation is discussed.

  14. Neutron responsive self-powered radiation detector

    DOEpatents

    Brown, Donald P.; Cannon, Collins P.

    1978-01-01

    An improved neutron responsive self-powered radiation detector is disclosed in which the neutron absorptive central emitter has a substantially neutron transmissive conductor collector sheath spaced about the emitter and the space between the emitter and collector sheath is evacuated.

  15. Workshop report and presentations from the Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop

    NASA Astrophysics Data System (ADS)

    The Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop was held in Oak ridge, Tennessee, on November 2-3, 1987. It was to provide a forum for representatives of the national laboratories, DOE, and the semiconductor industry in which to discuss capabilities of the national laboratories which could contribute to the future competitiveness of the US semiconductor industry, to identify specific large and small projects at the national laboratories which would be of direct benefit to the semiconductor industry, and to find ways of implementing these projects. Numerous small projects were identified which would utilize unique capabilities of the national laboratories in advanced ion implantation, plasma processing (including electron cyclotron resonance plasmas), ion and cluster beam deposition, materials characterization, electronic packaging, and laser processing and deposition. Five large-scale candidate projects were identified in synchrotron x-ray lithography, silicon process integration, advanced materials processing science, process analysis and diagnostics, and ultra clean room engineering. The major obstacle to implementing these projects if the lack of appropriate funds to initiate and stimulate interactions between the national laboratories and the semiconductor industry. SEMATECH and the federal government are potential sources of seed funds for these projects. The Semiconductor Research Corporation is ideally suited to interface the semiconductor industry and the national laboratories for many of these interactions.

  16. Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature

    NASA Astrophysics Data System (ADS)

    Lingren, Clinton L.; Apotovsky, Boris A.; Butler, Jack F.; Conwell, Richard L.; Doty, F. Patrick; Friesenhahn, Stan J.; Oganesyan, A.; Pi, Bo; Zhao, S.

    1997-07-01

    Researchers at Digirad Corporation have developed an innovative method for eliminating the effects of hole trapping in radiation detectors made from compound semiconductors such as CdTe or CdZnTe. The technique involves no additional electronics. Working devices have been manufactured in a variety of configurations including imaging arrays. This paper presents results from some simple structures.

  17. Integrator Circuitry for Single Channel Radiation Detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2008-01-01

    Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.

  18. A novel compact real time radiation detector.

    PubMed

    Li, Shiping; Xu, Xiufeng; Cao, Hongrui; Tang, Shibiao; Ding, Baogang; Yin, Zejie

    2012-08-01

    A novel compact real time radiation detector with cost-effective, ultralow power and high sensitivity based on Geiger counter is presented. The power consumption of this detector which employs CMOS electro circuit and ultralow-power microcontroller is down to only 12.8 mW. It can identify the presences of 0.22 μCi (60)Co at a distance of 1.29 m. Furthermore, the detector supports both USB bus and serial interface. It can be used for personal radiation monitoring and also fits the distributed sensor network for radiation detection. PMID:22738843

  19. Development of a plasma panel radiation detector

    NASA Astrophysics Data System (ADS)

    Ball, R.; Beene, J. R.; Ben-Moshe, M.; Benhammou, Y.; Bensimon, B.; Chapman, J. W.; Etzion, E.; Ferretti, C.; Friedman, P. S.; Levin, D. S.; Silver, Y.; Varner, R. L.; Weaverdyck, C.; Wetzel, R.; Zhou, B.; Anderson, T.; McKinny, K.; Bentefour, E. H.

    2014-11-01

    This article reports on the development and experimental results of commercial plasma display panels adapted for their potential use as micropattern gas radiation detectors. The plasma panel sensor (PPS) design and materials include glass substrates, metal electrodes and inert gas mixtures which provide a physically robust, hermetically sealed device. Plasma display panels used as detectors were tested with cosmic ray muons, beta rays and gamma rays, protons, and thermal neutrons. The results demonstrated rise times and time resolution of a few nanoseconds, as well as sub-millimeter spatial resolution compatible with the pixel pitch.

  20. Processing circuitry for single channel radiation detector

    NASA Technical Reports Server (NTRS)

    Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

    2009-01-01

    Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.

  1. Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

    NASA Technical Reports Server (NTRS)

    Barry, Mamadou Y.

    1999-01-01

    The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

  2. Device for calibrating a radiation detector system

    DOEpatents

    Mc Fee, Matthew C.; Kirkham, Tim J.; Johnson, Tippi H.

    1994-01-01

    A device for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a "shield plate" or shell, and an opposing "source plate" containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, heart, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects.

  3. Device for calibrating a radiation detector system

    DOEpatents

    McFee, M.C.; Kirkham, T.J.; Johnson, T.H.

    1994-12-27

    A device is disclosed for testing a radiation detector system that includes at least two arrays of radiation detectors that are movable with respect to each other. The device includes a ''shield plate'' or shell, and an opposing ''source plate'' containing a source of ionizing radiation. Guides are attached to the outer surface of the shell for engaging the forward ends of the detectors, thereby reproducibly positioning the detectors with respect to the source and with respect to each other, thereby ensuring that a predetermined portion of the radiation emitted by the source passes through the shell and reaches the detectors. The shell is made of an hydrogenous material having approximately the same radiological attenuation characteristics as composite human tissue. The source represents a human organ such as the lungs, heart, kidneys, liver, spleen, pancreas, thyroid, testes, prostate, or ovaries. The source includes a source of ionizing radiation having a long half-life and an activity that is within the range typically searched for in human subjects. 3 figures.

  4. Radiation detector system having heat pipe based cooling

    DOEpatents

    Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

    2006-10-31

    A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

  5. Semiconductors open a new niche for plasma researchers

    SciTech Connect

    Glanz, J.

    1995-11-24

    This article describes a possible future niche for plasma researchers whose fusion program budgets have been slashed. The computer industry has a continuing need for chips with ever finer features, and semi-conductor makers are counting on improvements in a technique called plasma processing. Thousands of new technical and research jobs are likely to open in this area.

  6. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

    ERIC Educational Resources Information Center

    Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

    2014-01-01

    In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

  7. Silicon radiation detectors: materials and applications

    SciTech Connect

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

  8. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... that are not fitted with a pressure relief device and provide appropriate guidance for exposure to fire. ... fragment upon impact. (b) Radiation detectors must not have a design pressure exceeding 4.83 MPa (700 psig... with a burst pressure of not less than three times the design pressure if the radiation detector...

  9. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... that are not fitted with a pressure relief device and provide appropriate guidance for exposure to fire. ... fragment upon impact. (b) Radiation detectors must not have a design pressure exceeding 4.83 MPa (700 psig... with a burst pressure of not less than three times the design pressure if the radiation detector...

  10. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... that are not fitted with a pressure relief device and provide appropriate guidance for exposure to fire. ... fragment upon impact. (b) Radiation detectors must not have a design pressure exceeding 4.83 MPa (700 psig... with a burst pressure of not less than three times the design pressure if the radiation detector...

  11. 49 CFR 173.310 - Exceptions for radiation detectors.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... that are not fitted with a pressure relief device and provide appropriate guidance for exposure to fire. ... fragment upon impact. (b) Radiation detectors must not have a design pressure exceeding 4.83 MPa (700 psig... with a burst pressure of not less than three times the design pressure if the radiation detector...

  12. The impact of space research on semiconductor crystal growth technology

    NASA Technical Reports Server (NTRS)

    Witt, A. F.

    1983-01-01

    Crystal growth experiments in reduced gravity environment and related ground-based research have contributed significantly to the establishment of a scientific basis for semiconductor growth from the melt. NASA-sponsored research has been instrumental in the introduction of heat pipes for heat and mass transfer control in crystal growth and in the development of magnetic field induced melt stabilization, approaches primarily responsible for recent advances in crystal growth technology.

  13. Wire chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, Victor; Mulera, Terrence A.

    1984-01-01

    A wire chamber radiation detector (11) has spaced apart parallel electrodes (16) and grids (17, 18, 19) defining an ignition region (21) in which charged particles (12) or other ionizing radiations initiate brief localized avalanche discharges (93) and defining an adjacent memory region (22) in which sustained glow discharges (94) are initiated by the primary discharges (93). Conductors (29, 32) of the grids (18, 19) at each side of the memory section (22) extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles (12) were detected by sequentially transmitting pulses to the conductors (29) of one grid (18) while detecting transmissions of the pulses to the orthogonal conductors (36) of the other grid (19) through glow discharges (94). One of the grids (19) bounding the memory region (22) is defined by an array of conductive elements (32) each of which is connected to the associated readout conductor (36) through a separate resistance (37). The wire chamber (11) avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or near simultaneous charged particles (12) have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  14. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  15. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  16. Portable radiation detector and mapping system

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1995-09-01

    A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a Global Positioning System (GPS) on flash memory cards. The recorded information is then transferred to a lap-top computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system presently records spectra from a Nal(Tl) gamma-ray detector or an enriched Li-6 doped glass neutron scintillator. Standard Geographic Information System software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River Site (SRS) using RADMAPS.

  17. Portable radiation detector and mapping system

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1995-12-31

    A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate, and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a global positioning system (GPS) on flash memory cards. The recorded information is then transferred to a laptop computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system records spectra from a NaI(Tl) gamma-ray detector or an enriched {sup 6}Li doped glass neutron scintillator. Standard Geographic Information System (GIS) software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River site (SRS) using RADMAPS. The ability to provide rapid field data should be of use in treaty verification, safeguards, decontamination, and nuclear weapons dismantlement.

  18. Second International Semiconductor Device Research Symposium (ISDRS-1993)

    NASA Astrophysics Data System (ADS)

    Shur, Michael; Money, John M.

    1994-04-01

    The goal of this second biannual international meeting was to provide a congenial forum for the exchange of information and new ideas for researchers from university, industry and government laboratories in the field of semiconductor devices and device physics. To this end, we have an unusually short period between the submission of papers and the conference, a speedy publication of the proceedings, poster sessions, panel discussions, and a wide dissemination of the conference proceedings. Our other goal is to make this conference truly international. To achieve this, the symposium has sub-committees in Asia, Europe and the former Soviet Union. This conference is organized in cooperation with the IEEE MTT Society, the European Physical Society, the United States National Committee of URSI and the Russian Physical Society. Generous financial support has been provided by the Army Research Office, the Office of Naval Research, the NASA Ames Research Center and the Soros International Science Foundation. Papers cover a broad range of topics, including novel and ultrasmall devices, photonics and optoelectronics, heterostructure and cryogenic devices, wide band gap semiconductors, thin film transistors, MOSFET technology and devices, carrier transport phenomena, materials and device characterization, simulation and modeling. It is hoped that such a broad range of topics will foster a cross-fertilization of the different fields related to semiconductor materials and devices.

  19. Electromechanically cooled germanium radiation detector system

    NASA Astrophysics Data System (ADS)

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-02-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++ [1], GAMANL [2], GRPANL [3]and MGAU [4], typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service [5]. The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted.

  20. Beyond CMOS -- The Semiconductor Industry's Nanoelectronics Research Initiative

    NASA Astrophysics Data System (ADS)

    Coufal, Hans

    2006-03-01

    The tremendously powerful scaling of transistors, that has enabled Moore's Law for the past forty years, can not continue forever. Some of the reasons, such as the atomistic nature of matter, are obvious. Others are less obvious and will be briefly reviewed before some of the potential alternatives to charge based logic will be analyzed. Such an analysis had the semiconductor industry initiate a Nanoelectronics Research Initiative. The current status of this program will be reviewed

  1. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  2. Protection of radiation detectors from fast neutron damage

    SciTech Connect

    Kronenberg, S.

    1986-09-02

    A device is described for measuring radiation emitted from a nuclear explosion, the radiation having a comparatively fast moving gamma ray component and a comparatively slower neutron component. The device consists of: a solid state crystal radiation detector; a voltage source applied to bias the detector; and means responsive to the gamma ray component for removing the bias voltage for a predetermined time period whereby the crystal radiation detector is rendered less sensitive to the passage of the neutron radiation component.

  3. Field Testing of a Portable Radiation Detector and Mapping System

    SciTech Connect

    Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

    1998-03-01

    Researchers at the Savannah River Site (SRS) have developed a man- portable radiation detector and mapping system (RADMAPS) which integrates the accumulation of radiation information with precise ground locations. RADMAPS provides field personnel with the ability to detect, locate, and characterize nuclear material at a site or facility by analyzing the gamma or neutron spectra and correlating them with position. the man-portable field unit records gamma or neutron count rate information and its location, along with date and time, using an embedded Global Positioning System (GPS). RADMAPS is an advancement in data fusion, integrating several off-the-shelf technologies with new computer software resulting in a system that is simple to deploy and provides information useful to field personnel in an easily understandable form. Decisions on subsequent actions can be made in the field to efficiently use available field resources. The technologies employed in this system include: recording GPS, radiation detection (typically scintillation detectors), pulse height analysis, analog-to-digital converters, removable solid-state (Flash or SRAM) memory cards, Geographic Information System (GIS) software and personal computers with CD-ROM supporting digital base maps. RADMAPS includes several field deployable data acquisition systems designed to simultaneously record radiation and geographic positions. This paper summarizes the capabilities of RADMAPS and some of the results of field tests performed with the system.

  4. Large dynamic range radiation detector and methods thereof

    DOEpatents

    Marrs, Roscoe E.; Madden, Norman W.

    2012-02-14

    According to one embodiment, a radiation detector comprises a scintillator and a photodiode optically coupled to the scintillator. The radiation detector also includes a bias voltage source electrically coupled to the photodiode, a first detector operatively electrically coupled to the photodiode for generating a signal indicative of a level of a charge at an output of the photodiode, and a second detector operatively electrically coupled to the bias voltage source for generating a signal indicative of an amount of current flowing through the photodiode.

  5. SENTIRAD—An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

    NASA Astrophysics Data System (ADS)

    Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

    2011-10-01

    The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

  6. R&D for Better Nuclear Security: Radiation Detector Materials

    SciTech Connect

    Kammeraad, J E

    2009-04-02

    I am going to talk about the need for better materials for radiation detectors. I believe that government investment in this area can enable transformational technology change that could impact domestic nuclear security and also national nuclear security in some very positive and powerful ways. I'm not going to give you a lecture on how radiation detectors work, but I am going to tell you a bit about today's off-the-shelf technology and why it is not sufficient, what we need, and what security benefit you could get from improvements. I think we're at a critical point in time for some very impactful investments. In particular I'm going to focus on the use of gamma-ray radiation detectors at ports of entry. Not long before DHS was formed, Congress decreed that counter measures against the delivery of radiological and nuclear threats would be put in place at US ports of entry, under the authority of US Customs (later Customs and Border Protection in DHS). This included the screening of all cars and trucks passing through a port of entry. Existing off-the-shelf radiation detectors had to be selected for this purpose. Plans were made to make the most of the available technologies, but there are some inherent limitations of these detectors, plus the operational setting can bring out other limitations.

  7. Design of a transition radiation detector for cosmic rays

    NASA Technical Reports Server (NTRS)

    Hartmann, G.; Mueller, D.; Prince, T.

    1975-01-01

    Transition radiation detectors consisting of sandwiches of plastic foam radiators and multiwire proportional chambers can be used to identify cosmic ray particles with energies gamma ? E/mc-squared is greater than 10 to the 3rd and to measure their energy in the region gamma is roughly equal to 10 to the 3rd

  8. Real-time self-networking radiation detector apparatus

    DOEpatents

    Kaplan, Edward; Lemley, James; Tsang, Thomas Y.; Milian, Laurence W.

    2007-06-12

    The present invention is for a radiation detector apparatus for detecting radiation sources present in cargo shipments. The invention includes the features of integrating a bubble detector sensitive to neutrons and a GPS system into a miniaturized package that can wirelessly signal the presence of radioactive material in shipping containers. The bubble density would be read out if such indicated a harmful source.

  9. Contributive research in compound semiconductor material and related devices

    NASA Astrophysics Data System (ADS)

    Twist, James R.

    1988-05-01

    The objective of this program was to provide the Electronic Device Branch (AFWAL/AADR) with the support needed to perform state of the art electronic device research. In the process of managing and performing on the project, UES has provided a wide variety of scientific and engineering talent who worked in-house for the Avionics Laboratory. These personnel worked on many different types of research programs from gas phase microwave driven lasers, CVD and MOCVD of electronic materials to Electronic Device Technology for new devices. The fields of research included MBE and theoretical research in this novel growth technique. Much of the work was slanted towards the rapidly developing technology of GaAs and the general thrust of the research that these tasks started has remained constant. This work was started because the Avionics Laboratory saw a chance to advance the knowledge and level of the current device technology by working in the compounds semiconductor field. UES is pleased to have had the opportunity to perform on this program and is looking forward to future efforts with the Avionics Laboratory.

  10. Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Smith, Holland McTyeire

    Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of Tl

  11. High-performance diamond radiation detectors produced by lift-off method

    NASA Astrophysics Data System (ADS)

    Shimaoka, Takehiro; Kaneko, Junichi H.; Tsubota, Masakatsu; Shimmyo, Hiroaki; Watanabe, Hideyuki; Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shin-ichi

    2016-03-01

    For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that \\varepsilon{diamond}= 13.1 \\text{eV} and \\varepsilon{Si}=3.62 \\text{eV} . Energy resolutions were 0.38% for both holes and electrons. We produced a high-performance diamond radiation detector using the productive lift-off method.

  12. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    SciTech Connect

    Vizkelethy, Gyorgy

    2010-07-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  13. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    SciTech Connect

    Vizkelethy, Gyorgy

    2009-10-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  14. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. A new transition radiation detector for cosmic ray nuclei

    NASA Technical Reports Server (NTRS)

    Lheureux, J.; Meyer, P.; Muller, D.; Swordy, S.

    1981-01-01

    Test measurements on materials for transition radiation detectors at a low Lorentz factor are reported. The materials will be based on board Spacelab-2 for determining the composition and energy spectra of nuclear cosmic rays in the 1 TeV/nucleon range. The transition radiation detectors consist of a sandwich of radiator-photon detector combinations. The radiators emit X-rays and are composed of polyolefin fibers used with Xe filled multiwired proportional chamber (MWPC) detectors capable of detecting particle Lorentz factors of several hundred. The sizing of the detectors is outlined, noting the requirement of a thickness which provides a maximum ratio of transition radiation to total signal in the chambers. The fiber radiator-MWPC responses were tested at Fermilab and in an electron cyclotron. An increase in transition radiation detection was found as a square power law of Z, and the use of six radiator-MWPC on board the Spacelab-2 is outlined.

  16. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  17. Dielectric Resonators as Radiation Detectors at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Yamasaki, N. Y.; Sekiya, N.; Kikuchi, T.; Hoshino, M.; Mitsuda, K.; Sato, K.

    2015-10-01

    GHz LC resonators whose resonance frequency depends on temperature may be put to use as radiation detectors. We have demonstrated that a resonator utilizing STO (SrTiO) at 4 and 2 K detected infrared light emitting diode (LED) light, by a shift of resonance frequency around 2 GHz. A suitable design of a resonator array with temperature-dependent dielectric material will be used as a large-format microcalorimeter array without or with only very small Johnson noise.

  18. Device for detachably securing a collimator to a radiation detector

    SciTech Connect

    Hanz, G.J.; Jung, G.; Pflaum, M.

    1986-12-16

    A device is described for detachably securing a collimator to a radiation detector, comprising: (a) a first annular groove means secured to the radiation detector; (b) a second annular groove means secured to the collimator; (c) a split ring having a first and second ring ends, the ring being received in the first annular groove means; and (d) a ring diameter control system, including (d1) a first lever system having two ends; (d2) a second lever system having two ends; and (d3) a rotating hub being rotatably secured to the detector head; wherein the first lever system is rotatably mounted with one end linked to the first ring end and with the other end linked to the rotating hub. The second lever system is rotatably mounted with one end linked to the second ring end and with the other end linked to the rotating hub, such that rotation of the rotating hub moves the first and second lever systems in opposite directions thereby moving the first and second ring ends between a first position, in which the split ring is positioned only in the first annular groove means, and a second position, in which the split ring is located in both the first annular groove means and the second annular groove means, thus attaching the collimator to the radiation detector.

  19. Recent progress in the development of transition radiation detectors

    NASA Technical Reports Server (NTRS)

    Cherry, M. L.; Hartmann, G.; Prince, T.; Mueller, D.

    1978-01-01

    Transition-radiation detectors have been used in several recent cosmic-ray experiments for particle identification at energies E/mc-squared of at least about 1000. In order to optimize the design of such detectors and to use them for energy measurements over a broad energy range, it is necessary to study the details of the transition-radiation process. Experimental results are presented which test the theoretical predictions more precisely and at higher energies than in previous experiments. The dependence of the interference pattern in the frequency spectrum on the radiator dimensions is studied, and the total transition-radiation yield generated by electrons in various radiators is measured over a very wide energy range, from 5 to 300 GeV. The significance of the individual experimental parameters in the design of transition radiation detectors is reviewed, and the characteristics of transition-radiation detectors capable of measuring particle energies over the range E/mc-squared from about 300 to 100,000 are discussed.

  20. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-31

    Recently, the U.S. Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS’s requirements in terms of sensitivity, resolution, response time and reach back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron’s identiFINDER™, which primarily uses sodium iodide crystals (3.18-cm x 2.54-cm cylinders) as gamma detector, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack™ that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity (comparable to that of a 7.62-cm x 7.62-cm sodium iodide crystal at low gamma energy ranging from 30 keV to 3,000 keV), better resolution (< 3.0 percent at 662 keV), faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets

  1. Field Deployable Gamma Radiation Detectors for DHS Use

    SciTech Connect

    Sanjoy Mukhopadhyay

    2007-08-01

    Recently, the Department of Homeland Security (DHS) has integrated all nuclear detection research, development, testing, evaluation, acquisition, and operational support into a single office: the Domestic Nuclear Detection Office (DNDO). The DNDO has specific requirements set for all commercial off-the-shelf and government off-the-shelf radiation detection equipment and data acquisition systems. This article would investigate several recent developments in field deployable gamma radiation detectors that are attempting to meet the DNDO specifications. Commercially available, transportable, handheld radio isotope identification devices (RIID) are inadequate for DHS requirements in terms of sensitivity, resolution, response time, and reach-back capability. The leading commercial vendor manufacturing handheld gamma spectrometer in the United States is Thermo Electron Corporation. Thermo Electron's identiFINDER{trademark}, which primarily uses sodium iodide crystals (3.18 x 2.54cm cylinders) as gamma detectors, has a Full-Width-at-Half-Maximum energy resolution of 7 percent at 662 keV. Thermo Electron has just recently come up with a reach-back capability patented as RadReachBack{trademark} that enables emergency personnel to obtain real-time technical analysis of radiation samples they find in the field. The current project has the goal to build a prototype handheld gamma spectrometer, equipped with a digital camera and an embedded cell phone to be used as an RIID with higher sensitivity, better resolution, and faster response time (able to detect the presence of gamma-emitting radio isotopes within 5 seconds of approach), which will make it useful as a field deployable tool. The handheld equipment continuously monitors the ambient gamma radiation, and, if it comes across any radiation anomalies with higher than normal gamma gross counts, it sets an alarm condition. When a substantial alarm level is reached, the system automatically triggers the saving of relevant

  2. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  3. Review on the characteristics of radiation detectors for dosimetry and imaging

    NASA Astrophysics Data System (ADS)

    Seco, Joao; Clasie, Ben; Partridge, Mike

    2014-10-01

    The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

  4. Protection of radiation detectors from fast neutron damage

    SciTech Connect

    Kronenberg, S.

    1984-01-30

    A circuit for biasing a solid state crystal used as a radiation detector in which the passage of the initial gamma ray pulse from the explosion of a nearby tactical nuclear weapon is utilized to temporarily remove the bias from said crystal for a time sufficient to permit the fast neutron pulse from the same explosion to pass by without permanently damaging the counter crystal. The circuit comprises an RC circuit between the bias supply and the crystal with a reverse biased diode across the capacitor.

  5. Radiation detectors as surveillance monitors for IAEA safeguards

    SciTech Connect

    Fehlau, P.E.; Dowdy, E.J.

    1980-10-01

    Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development.

  6. Development of Superconducting Tunnel Junction as an Imaging Radiation Detector

    NASA Astrophysics Data System (ADS)

    Yamasaki, N. Y.; Rokutanda, E.; Kikuchi, K.; Kushino, A.; Ohashi, T.; Kurakado, M.

    Superconducting tunnel junctions (STJs) as X-ray detectors have been developed mainly aiming at high resolution spectrometers. We archived an energy resolution of 106 eV at 5.9 keV (FWHM) using an STJ developed at Nippon Steel Corporation with a cooled (~ 100K) FET. Furthermore, series-connected STJs as an imaging radiation detector are developed. Both the pulse hight and the rise time of signals from 241Am α-particles irradiated on a series-connected STJ give a good position sensitivity, indicating the intrinsic position resolution less than 0.5 mm

  7. Calibration of the active radiation detector for Spacelab-One

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The flight models of the active radiation detector (ARD) for the ENV-01 environmental monitor were calibrated using gamma radiation. Measured sensitivities of the ion chambers were 6.1 + or - 0.3 micron rad per count for ARD S/N1, and 10.4 + or - 0.5 micron rad per count for ARD S/N2. Both were linear over the measured range 0.10 to 500 m/rad hour. The particle counters (proportional counters) were set to respond to approximately 85% of minimum ionizing particles of unit charge passing through them. These counters were also calibrated in the gamma field.

  8. Radiation detector having a multiplicity of individual detecting elements

    DOEpatents

    Whetten, Nathan R.; Kelley, John E.

    1985-01-01

    A radiation detector has a plurality of detector collection element arrays immersed in a radiation-to-electron conversion medium. Each array contains a multiplicity of coplanar detector elements radially disposed with respect to one of a plurality of positions which at least one radiation source can assume. Each detector collector array is utilized only when a source is operative at the associated source position, negating the necessity for a multi-element detector to be moved with respect to an object to be examined. A novel housing provides the required containment of a high-pressure gas conversion medium.

  9. A neural network for positron identification by transition radiation detector

    NASA Astrophysics Data System (ADS)

    Bellotti, R.; Castellano, M.; De Marzo, C.; Pasquariello, G.; Satalino, G.; Spinelli, P.

    1994-11-01

    A neural network algorithm has been applied in order to distinguish positrons from protons by a transition radiation detector (TRD). New variables are introduced, that simultaneously take into account spatial and energy TRD information. This method is found to be better than the one based on classical analysis: the results improve the detector performance in particle identification for efficiency higher than 90%. The high accuracy achieved with this method is used to identify positrons versus protons with 3 × 10 -3 contamination, as required by TRAMP-SI cosmic ray space experiment on the NASA Balloon-Borne Magnet Facility.

  10. Room temperature aluminum antimonide radiation detector and methods thereof

    DOEpatents

    Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

    2015-03-03

    In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

  11. CCST (Center for Compound Semiconductor Technology) research briefs

    NASA Astrophysics Data System (ADS)

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl2 Ca2 Ba2 Cu3 O sub y thin films.

  12. Charge transport properties of CdMnTe radiation detectors

    SciTech Connect

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  13. Super-thin single crystal diamond membrane radiation detectors

    SciTech Connect

    Pomorski, Michal; Caylar, Benoit; Bergonzo, Philippe

    2013-09-09

    We propose to use the non-electronic grade (nitrogen content 5 ppb < [N] < 5 ppm) single crystal (sc) chemical vapour deposited (CVD) diamond as a thin-membrane radiation detector. Using deep Ar/O{sub 2} plasma etching it is possible to produce self-supported few micrometres thick scCVD membranes of a size approaching 7 mm × 7 mm, with a very good surface quality. After metallization and contacting, electrical properties of diamond membrane detectors were probed with 5.486 MeV α-particles as an ionization source. Despite nitrogen impurity, scCVD membrane detectors exhibit stable operation, charge collection efficiency close to 100%, with homogenous response, and extraordinary dielectric strength up to 30 V/μm.

  14. Multiple cell radiation detector system, and method, and submersible sonde

    DOEpatents

    Johnson, Larry O.; McIsaac, Charles V.; Lawrence, Robert S.; Grafwallner, Ervin G.

    2002-01-01

    A multiple cell radiation detector includes a central cell having a first cylindrical wall providing a stopping power less than an upper threshold; an anode wire suspended along a cylindrical axis of the central cell; a second cell having a second cylindrical wall providing a stopping power greater than a lower threshold, the second cylindrical wall being mounted coaxially outside of the first cylindrical wall; a first end cap forming a gas-tight seal at first ends of the first and second cylindrical walls; a second end cap forming a gas-tight seal at second ends of the first and second cylindrical walls; and a first group of anode wires suspended between the first and second cylindrical walls.

  15. BOBCAT Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris Hodge

    2008-03-01

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as “Pagers.” This test, “Bobcat,” was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  16. Personal Radiation Detector Field Test and Evaluation Campaign

    SciTech Connect

    Chris A. Hodge, Ding Yuan, Raymond P. Keegan, Michael A. Krstich

    2007-07-09

    Following the success of the Anole test of portable detection system, the U.S. Department of Homeland Security (DHS) Domestic Nuclear Detection Office organized a test and evaluation campaign for personal radiation detectors (PRDs), also known as 'Pagers'. This test, 'Bobcat', was conducted from July 17 to August 8, 2006, at the Nevada Test Site. The Bobcat test was designed to evaluate the performance of PRDs under various operational scenarios, such as pedestrian surveying, mobile surveying, cargo container screening, and pedestrian chokepoint monitoring. Under these testing scenarios, many operational characteristics of the PRDs, such as gamma and neutron sensitivities, positive detection and false alarm rates, response delay times, minimum detectable activities, and source localization errors, were analyzed. This paper will present the design, execution, and methodologies used to test this equipment for the DHS.

  17. Multi-directional radiation detector using photographic film

    NASA Astrophysics Data System (ADS)

    Junet, L. K.; Majid, Z. A. Abdul; Sapuan, A. H.; Sayed, I. S.; Pauzi, N. F.

    2014-11-01

    Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation.

  18. Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

    NASA Astrophysics Data System (ADS)

    Chang, Y.; Grein, C. H.; Becker, C. R.; Huang, J.; Ghosh, S.; Aqariden, F.; Sivananthan, S.

    2012-10-01

    Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.

  19. Effects of Te inclusions on the performance of CdZnTe radiation detectors

    SciTech Connect

    Bolotnikov,A.E.; Abdul-Jabber, N. M.; Babalola, O. S.; Camarda, G. S.; Cui, Y.; Hossain, A. M.; Jackson, E. M.; Jackson, H. C.; James, J. A.; Kohman, K. T.; Luryi, A. L.; James, R. B.

    2008-10-19

    Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

  20. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    SciTech Connect

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  1. Parasitic Effects Affecting Responsivity of Sub-THz Radiation Detector Built of a MOSFET

    NASA Astrophysics Data System (ADS)

    Kopyt, P.; Salski, B.; Marczewski, J.; Zagrajek, P.; Lusakowski, J.

    2015-11-01

    In this paper, an analysis of parasitic elements that are found in all typical metal-oxide-semiconductor field-effect transistors (MOSFETs) has been performed from a viewpoint of a designer of sub-THz radiation detectors. A simplified model of the extrinsic MOSFET device has been proposed. Typical values of its parameters have been assumed. The authors have also built a model of the MOSFET's channel (intrinsic device) employing the standard transmission line approach and defining a Z-matrix of the circuit in order to facilitate its integration with the parasitic elements. The full effective circuit model of the MOSFET has been employed to analyze the behavior of the detector when subjected to sub-THz radiation delivered through the Gate and Source pads. Finally, predictions of the responsivity of an example detector built of a typical MOSFET integrated with a patch antenna fabricated on a 40-μm-thick silicon membrane have been compared with measurements of several structures employing MOSFETs of various channel widths. Good agreement between the predictions and the measurements has been demonstrated, which indicates that despite its simplicity, the presented model can significantly help to better understand operation of MOSFET-based detectors and also to use the existing silicon-based manufacturing processes.

  2. Monte Carlo calculation of the energy response characteristics of a RadFET radiation detector

    NASA Astrophysics Data System (ADS)

    Belicev, P.; Spasic Jokic, V.; Mayer, S.; Milosevic, M.; Ilic, R.; Pesic, M.

    2010-07-01

    The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sensor of ionizing radiation in nuclear-medicine, diagnostic-radiology, radiotherapy quality-assurance and in the nuclear and space industries. We focused our investigations on calculating the energy response of a p-type RadFET to low-energy photons in range from 12 keV to 2 MeV and on understanding the influence of uncertainties in the composition and geometry of the device in calculating the energy response function. All results were normalized to unit air kerma incident on the RadFET for incident photon energy of 1.1 MeV. The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code and for a limited number of incident photon energies the FOTELP code was also used for the sake of comparison. The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain results with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies which resulted in simulations with 1 - 2×109 histories.

  3. SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS

    SciTech Connect

    Nelson, A; Laurence, T; Conway, A; Behymer, E; Sturm, B; Voss, L; Nikolic, R; Payne, S; Mertiri, A; Pabst, G; Mandal, K; Burger, A

    2009-08-04

    The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.

  4. Development of CdZnTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Ki Hyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.

    2011-08-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

  5. Gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, Loucas G.; McCorkle, Dennis L.; Maxey, David V.; Carter, James G.

    1982-01-05

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  6. Improved gas mixtures for gas-filled radiation detectors

    DOEpatents

    Christophorou, L.G.; McCorkle, D.L.; Maxey, D.V.; Carter, J.G.

    1980-03-28

    Improved binary and ternary gas mixtures for gas-filled radiation detectors are provided. The components are chosen on the basis of the principle that the first component is one molecular gas or mixture of two molecular gases having a large electron scattering cross section at energies of about 0.5 eV and higher, and the second component is a noble gas having a very small cross section at and below about 1.0 eV, whereby fast electrons in the gaseous mixture are slowed into the energy range of about 0.5 eV where the cross section for the mixture is small and hence the electron mean free path is large. The reduction in both the cross section and the electron energy results in an increase in the drift velocity of the electrons in the gas mixtures over that for the separate components for a range of E/P (pressure-reduced electric field) values. Several gas mixtures are provided that provide faster response in gas-filled detectors for convenient E/P ranges as compared with conventional gas mixtures.

  7. EFFECTS OF P / N IN HOMOGENEITY ON CDZNTE RADIATION DETECTORS.

    SciTech Connect

    CHU,M.; TERTERIAN,S.; TING,D.; JAMES,R.B.; SZAWLOWSKI,M.; VISSER,G.J.

    2002-07-08

    Spectrometer grade, room-temperature radiation detectors have been produced on Cd{sub 0.90}Zn{sub 0.10}Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd{sub 0.90}Zn{sub 0.10}Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution of {sup 57}Co and {sup 241}Am radiation peaks are observed on all detectors except the ones produced on Cd{sub 0.90}Zn{sub 0.10}Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.

  8. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  9. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  10. Wire-chamber radiation detector with discharge control

    DOEpatents

    Perez-Mendez, V.; Mulera, T.A.

    1982-03-29

    A wire chamber; radiation detector has spaced apart parallel electrodes and grids defining an ignition region in which charged particles or other ionizing radiations initiate brief localized avalanche discharges and defining an adjacent memory region in which sustained glow discharges are initiated by the primary discharges. Conductors of the grids at each side of the memory section extend in orthogonal directions enabling readout of the X-Y coordinates of locations at which charged particles were detected by sequentially transmitting pulses to the conductors of one grid while detecting transmissions of the pulses to the orthogonal conductors of the other grid through glow discharges. One of the grids bounding the memory region is defined by an array of conductive elements each of which is connected to the associated readout conductor through a separate resistance. The wire chamber avoids ambiguities and imprecisions in the readout of coordinates when large numbers of simultaneous or; near simultaneous charged particles have been detected. Down time between detection periods and the generation of radio frequency noise are also reduced.

  11. A conductive surface coating for Si-CNT radiation detectors

    NASA Astrophysics Data System (ADS)

    Valentini, Antonio; Valentini, Marco; Ditaranto, Nicoletta; Melisi, Domenico; Aramo, Carla; Ambrosio, Antonio; Casamassima, Giuseppe; Cilmo, Marco; Fiandrini, Emanuele; Grossi, Valentina; Guarino, Fausto; Angela Nitti, Maria; Passacantando, Maurizio; Santucci, Sandro; Ambrosio, Michelangelo

    2015-08-01

    Silicon-Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon.

  12. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  13. Methodology for Assessing Radiation Detectors Used by Emergency Responders

    SciTech Connect

    Piotr Wasiolek; April Simpson

    2008-03-01

    The threat of weapons of mass destruction terrorism resulted in the U.S. Department of Homeland Security deploying large quantities of radiation detectors throughout the emergency responder community. However, emergency responders specific needs were not always met by standard health physics instrumentation used in radiation facilities. Several American National Standards Institute standards were developed and approved to evaluate the technical capabilities of detection equipment. Establishing technical capability is a critical step, but it is equally important to emergency responders that the instruments are easy to operate and can withstand the rugged situations they encounter. The System Assessment and Validation for Emergency Responders (SAVER) Program (managed by the U.S. Department of Homeland Security, Office of Grants and Training, Systems Support Division) focuses predominantly on the usability, ergonomics, readability, and other features of the detectors, rather than performance controlled by industry standards and the manufacturers. National Security Technologies, LLC, as a SAVER Technical Agent, conducts equipment evaluations using active emergency responders who are familiar with the detection equipment and knowledgeable of situations encountered in the field, which provides more relevant data to emergency responders.

  14. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, Sherwood

    1999-01-01

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals.

  15. Three-dimensional architecture for solid state radiation detectors

    DOEpatents

    Parker, S.

    1999-03-30

    A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.

  16. Large area radiation detectors based on II VI thin films

    NASA Astrophysics Data System (ADS)

    Quevedo-Lopez, Manuel

    2015-03-01

    The development of low temperature device technologies that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this talk, our efforts to develop novel CMOS integration schemes, circuits, memory, sensors as well as novel contacts, dielectrics and semiconductors for flexible electronics are presented. In particular, in this presentation we discuss fundamental materials properties including crystalline structure, interfacial reactions, doping, etc. defining performance and reliability of II-VI-based radiation sensors. We investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. Besides II-VI materials, we also evaluated several diode materials, Si, CdTe,GaAs, C (diamond), and ZnO, and two neutron converter materials,10B and 6LiF. We determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  17. Electrical delay line multiplexing for pulsed mode radiation detectors

    PubMed Central

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S.

    2015-01-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ~ 243 ps FWHM to ~272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is exible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors. PMID:25768002

  18. Electrical delay line multiplexing for pulsed mode radiation detectors

    NASA Astrophysics Data System (ADS)

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S.

    2015-04-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ∼243 ps FWHM to ∼272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is flexible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors.

  19. Electrical delay line multiplexing for pulsed mode radiation detectors.

    PubMed

    Vinke, Ruud; Yeom, Jung Yeol; Levin, Craig S

    2015-04-01

    Medical imaging systems are composed of a large number of position sensitive radiation detectors to provide high resolution imaging. For example, whole-body Positron Emission Tomography (PET) systems are typically composed of thousands of scintillation crystal elements, which are coupled to photosensors. Thus, PET systems greatly benefit from methods to reduce the number of data acquisition channels, in order to reduce the system development cost and complexity. In this paper we present an electrical delay line multiplexing scheme that can significantly reduce the number of readout channels, while preserving the signal integrity required for good time resolution performance. We experimented with two 4 × 4 LYSO crystal arrays, with crystal elements having 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm dimensions, coupled to 16 Hamamatsu MPPC S10931-050P SiPM elements. Results show that each crystal could be accurately identified, even in the presence of scintillation light sharing and inter-crystal Compton scatter among neighboring crystal elements. The multiplexing configuration degraded the coincidence timing resolution from ∼243 ps FWHM to ∼272 ps FWHM when 16 SiPM signals were combined into a single channel for the 4 × 4 LYSO crystal array with 3 mm × 3 mm × 20 mm crystal element dimensions, in coincidence with a 3 mm × 3 mm × 5 mm LYSO crystal pixel. The method is flexible to allow multiplexing configurations across different block detectors, and is scalable to an entire ring of detectors. PMID:25768002

  20. Search for New Physics with AMS-02 Transition Radiation Detector

    NASA Astrophysics Data System (ADS)

    Chung, Chanhoon

    Today the universe consists of 4.6% of ordinary matter, 23.3% of dark matter and 72.1% of dark energy. The dark matter is generally assumed be stable, non-relativistic and only weakly interacting. But we do not know what the dark matter is made of and how it is distributed within our Galaxy. In general, the cosmic antiparticles are expected as secondary products of interactions of the primary cosmic-rays (CRs) with the interstellar medium during propagation. While the measurements of CR positrons have become more precise, the results still do not match with the pure secondary origins. AMS-02 is a large acceptance precision particle spectrometer approved for installation on the International Space Station (ISS). A key feature of AMS-02 is precise particle identification for measurements of primary cosmic ray anti-particle spectra with negligible background up to a momentum of 500 GeV/c to allow indirect searches for dark matter. To efficiently separate positrons/electrons from protons/anti-protons, AMS-02 will be equipped with a Transition Radiation Detector (TRD) with 5248 straw tube proportional counters filled with a Xe/CO2 (80/20) mixture. The AMS-02 TRD was fully assembled and integrated into AMS-02 in 2007. In 2008 AMS-02 had recorded cosmic ray particles on ground to demonstrate full functionality of the device. For the AMS-02 TRD it will be shown that the detector response is as expected and the gas tightness will allow operation in space for 20 years with a gas supply of 25 kg.

  1. Radiation detector device for rejecting and excluding incomplete charge collection events

    DOEpatents

    Bolotnikov, Aleksey E.; De Geronimo, Gianluigi; Vernon, Emerson; Yang, Ge; Camarda, Giuseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B.

    2016-05-10

    A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

  2. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    SciTech Connect

    Jing, T

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N {approximately}20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  3. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    NASA Astrophysics Data System (ADS)

    Jing, T.

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (less than 10 ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N approx. 20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micro s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  4. Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.

    1997-01-01

    Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

  5. A self-biased neutron detector based on an SiC semiconductor for a harsh environment.

    PubMed

    Ha, Jang Ho; Kang, Sang Mook; Park, Se Hwan; Kim, Han Soo; Lee, Nam Ho; Song, Tae-Yung

    2009-01-01

    Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20V, the charge collection efficiency reached 100%. PMID:19362006

  6. Investigation of Advanced Resonant-Mass Gravitational Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Zhou, Zhiqing

    1994-01-01

    The sensitivity of resonant-mass gravitational radiation detectors depends on both the antenna cross-section and the detector noise. The cross-section is determined by the sound velocity VS and density rho of the antenna material, as well as the antenna geometry. The principal detector noise sources are thermal Nyquist noise and noise due to the readout electromechanical amplifier. The cross-section is proportional to rho V_sp{S}{5} for a given frequency and antenna geometry while the thermal noise is inversely proportional to the antenna's mechanical quality factor Q for a given temperature. Materials with high VS could, in principle, provide about a hundred-fold increase in the antenna cross -section as compared to current generation detectors. In this dissertation we report the results of measurements of the temperature-dependent mechanical losses in several suitable high sound velocity materials. The results show that the signal-to-noise ratios of detectors made of these materials could be improved by a factor of 15 to 100 at 4 K as compared to current detectors with aluminum antennas. A spherical gravitational wave antenna is very promising for gravitational wave astronomy because of its large cross-section, isotropic sky coverage, and the capability it can provide for determining the wave direction. In this dissertation several aspects of spherical detectors, including the eigenfunctions and eigenfrequencies of the normal-modes of an elastic sphere, the energy cross-section, and the response functions that are used to obtain the noise-free solution to the inverse problem are discussed. Using the maximum likelihood estimation method the inverse problem in the presence of noise is solved. We also determine the false-alarm probability and the detection probability for a network of spherical detectors and estimate the detectable event rates for supernovae core collapses and binary coalescences. Six identical cylindrical detectors, with a suitable arrangement of

  7. Rare Earth Doped Semiconductors and Materials Research Society Symposium Proceedings, Volume 301

    NASA Astrophysics Data System (ADS)

    Ballance, John

    1994-02-01

    The properties of rare earth ions in solids were studied in detail for decades, but until recently this work was restricted to dominantly ionic hosts such as fluorides and oxides, and to a lesser extent to more covalently bonded hosts, such as tetrahedral 2-6 semiconductors. The idea of rare earth elements incorporated into covalent semiconductors such as GaAs and Si may be traced to a short communication in 1963 by R.L. Bell (J. Appl. Phys. 34, 1563 (1963)) proposing a dc-pumped rare earth laser. At about the same time, three unpublished technical reports appeared as a result of U.S. Department of Defense sponsored research in rare earth doped Si, GaAs, and InP to fabricate LED's. Attempts by other researchers to identify sharp 4f specific emissions in these hosts essentially failed.

  8. CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

    NASA Astrophysics Data System (ADS)

    Meier, Matthias M.; Trompier, François; Ambrozova, Iva; Kubancak, Jan; Matthiä, Daniel; Ploc, Ondrej; Santen, Nicole; Wirtz, Michael

    2016-05-01

    Space weather can strongly affect the complex radiation field at aviation altitudes. The assessment of the corresponding radiation exposure of aircrew and passengers has been a challenging task as well as a legal obligation in the European Union for many years. The response of several radiation measuring instruments operated by different European research groups during joint measuring flights was investigated in the framework of the CONCORD (COmparisoN of COsmic Radiation Detectors) campaign in the radiation field at aviation altitudes. This cooperation offered the opportunity to measure under the same space weather conditions and contributed to an independent quality control among the participating groups. The CONCORD flight campaign was performed with the twin-jet research aircraft Dassault Falcon 20E operated by the flight facility Oberpfaffenhofen of the German Aerospace Center (Deutsches Zentrum für Luft- und Raumfahrt, DLR). Dose rates were measured at four positions in the atmosphere in European airspace for about one hour at each position in order to obtain acceptable counting statistics. The analysis of the space weather situation during the measuring flights demonstrates that short-term solar activity did not affect the results which show a very good agreement between the readings of the instruments of the different institutes.

  9. Materials Research Society Symposium Proceedings. Volume 339: Diamond, SiC and nitride wide bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Carter, Calvin H.; Gildenblat, Gennady; Nakamura, Shuji; Nemanich, Robert J.

    1994-04-01

    This symposium was directed toward the potential of using diamond, SiC, and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials. Both experimental and theoretical studies were presented. Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/UV light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make available exciting new applications, and that we are just beginning to understand the potential of these materials.

  10. A simulation study investigating a radiation detector utilizing the prompt gamma range verification technique for proton radiotherapy

    NASA Astrophysics Data System (ADS)

    Lau, Andrew David

    Proton therapy has shown to be a viable therapy for radiation oncology applications. The advantages of using protons as compared to photons in the treatments of diseases with radiation are numerous including the ability to deliver overall lower amounts of lethal radiation doses to the patient. This advantage is due to the fundamental interaction mechanism of the incident therapeutic protons with the patient, which produces a characteristic dose-distribution unique only to protons. Unlike photons, the entire proton beam is absorbed within the patent and the dose-distribution's maximum occurs near the end of the proton's path. Protons deliver less dose on the skin and intervening tissues, tighter dose conformality to the disease site, as well as no dose past the target volume, sparring healthy tissue distally in the patient. Current research in proton therapy is geared towards minimizing proton range uncertainty and monitoring in-vivo the location of the proton's path. Monitoring the beam's path serves also to verify which healthy structures/tissues were irradiated and whether the target volume has met the prescription dose. Among the many techniques used for in-vivo proton monitoring, the technique based on the emitted secondary particles, specifically the Prompt Gamma (PG) method, can be used for clinical implementation. This work focuses on developing a radiation detector system for using the PG method by investigating the characterizing the secondary particle field emitted from plastic and water phantoms as well as a radiation detector based on glass materials that exploits the Cherenkov phenomenon.

  11. Dynamic Electrothermal Model of a Sputtered Thermopile Thermal Radiation Detector for Earth Radiation Budget Applications

    NASA Technical Reports Server (NTRS)

    Weckmann, Stephanie

    1997-01-01

    The Clouds and the Earth's Radiant Energy System (CERES) is a program sponsored by the National Aeronautics and Space Administration (NASA) aimed at evaluating the global energy balance. Current scanning radiometers used for CERES consist of thin-film thermistor bolometers viewing the Earth through a Cassegrain telescope. The Thermal Radiation Group, a laboratory in the Department of Mechanical Engineering at Virginia Polytechnic Institute and State University, is currently studying a new sensor concept to replace the current bolometer: a thermopile thermal radiation detector. This next-generation detector would consist of a thermal sensor array made of thermocouple junction pairs, or thermopiles. The objective of the current research is to perform a thermal analysis of the thermopile. Numerical thermal models are particularly suited to solve problems for which temperature is the dominant mechanism of the operation of the device (through the thermoelectric effect), as well as for complex geometries composed of numerous different materials. Feasibility and design specifications are studied by developing a dynamic electrothermal model of the thermopile using the finite element method. A commercial finite element-modeling package, ALGOR, is used.

  12. Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector

    PubMed Central

    Urdaneta, M.; Stepanov, P.; Weinberg, I. N.; Pala, I. R.; Brock, S.

    2013-01-01

    Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm2. PMID:24432047

  13. Advanced Semiconductor Dosimetry in Radiation Therapy

    SciTech Connect

    Rosenfeld, Anatoly B.

    2011-05-05

    Modern radiation therapy is very conformal, resulting in a complexity of delivery that leads to many small radiation fields with steep dose gradients, increasing error probability. Quality assurance in delivery of such radiation fields is paramount and requires real time and high spatial resolution dosimetry. Semiconductor radiation detectors due to their small size, ability to operate in passive and active modes and easy real time multichannel readout satisfy many aspects of in vivo and in a phantom quality assurance in modern radiation therapy. Update on the recent developments and improvements in semiconductor radiation detectors and their application for quality assurance in radiation therapy, based mostly on the developments at the Centre for Medical Radiation Physics (CMRP), University of Wollongong, is presented.

  14. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  15. Structural and Electronic Properties of Gold Contacts on CdZnTe with Different Surface Finishes for Radiation Detector Applications

    NASA Astrophysics Data System (ADS)

    Tari, S.; Aqariden, F.; Chang, Y.; Ciani, A.; Grein, C.; Li, Jin; Kioussis, N.

    2014-08-01

    State-of-the-art room-temperature, high-resolution x-ray and gamma-ray semiconductor detectors can be fabricated from CdZnTe (CZT) crystals. The structural and electronic properties of the CZT surface, especially the contact interfaces, can have a substantial effect on radiation detector performance, for example leakage current, signal-to-noise ratio, and energy resolution, especially for soft x-rays and large pixilated arrays. Atomically smooth and defect-free surfaces are desirable for high-performance CZT-based detectors; chemo-mechanical polishing (CMP) is typically performed to produce such surfaces. The electrical behavior of the metal/CZT interface varies substantially with surface preparation before contact deposition, and with choice of metal and deposition technique. We report a systematic study of the structural and electronic properties of gold (Au) contacts on CZT prepared with different surface finishes. We observed subsurface damage under Au contacts on CMP-finished CZT and abrupt interfaces for Au on chemically-polished (CP) CZT. Schottky barrier formation was observed for Au contacts, irrespective of surface finish, and less charge trapping and low surface resistance were observed for CP-finished surfaces. Pre-deposition surface treatment produced interfaces free from oxide layers.

  16. A new thermal radiation detector using optical heterodyne detection of absorbed energy

    NASA Technical Reports Server (NTRS)

    Davis, C. C.; Petuchowski, S. J.

    1983-01-01

    The operating principles of a new kind of room-temperature thermal radiation detector are described. In this device modulated light heats a gas, either directly or by conduction from a thin absorbing membrane, and the resultant change in density of the gas is detected by optical heterodyning. The performance of a membrane device of this kind agrees well with the predictions of theory.

  17. Using Ionizing Radiation Detectors. Module 11. Vocational Education Training in Environmental Health Sciences.

    ERIC Educational Resources Information Center

    Consumer Dynamics Inc., Rockville, MD.

    This module, one of 25 on vocational education training for careers in environmental health occupations, contains self-instructional materials on using ionizing radiation detectors. Following guidelines for students and instructors and an introduction that explains what the student will learn are three lessons: (1) naming and telling the function…

  18. Radiation-detector optical-imaging device is of simplified construction

    NASA Technical Reports Server (NTRS)

    1965-01-01

    A simplified radiation detector was designed which employs an activated continuous front surface consisting of either the diffused or barrier type of semiconducting material with a grid structure on the nonactivated side of the detector. Its form may be either a rectangular coordinate or a polar coordinate system.

  19. Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

    DOEpatents

    Conway, Adam; Beck, Patrick R; Graff, Robert T; Nelson, Art; Nikolic, Rebecca J; Payne, Stephen A; Voss, Lars; Kim, Hadong

    2015-04-07

    A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

  20. Performance characteristics of a silicon photomultiplier based compact radiation detector for Homeland Security applications

    NASA Astrophysics Data System (ADS)

    Park, Hye Min; Joo, Koan Sik

    2015-05-01

    A next-generation compact radiation detector was studied for more accurate measurement of radiation and for improvement of detector reliability for the purpose of developing radiation protection technology and military applications. The previously used radiation detector had some limitations due to its bulky size, limited range and its environment for radiation measurement. On the other hand, the compact radiation detector examined in this study utilizes a silicon photomultiplier which appears to be more suitable for this application because of its physical superiority characterized by its small size, high sensitivity, and durability. Accordingly, a SiPM based scintillation detector has been developed as part of this basic study of military radiation detectors. The detector has been tested for its ability to obtain the operating characteristics of a sensor and analyzed with variations of parameter values and for efficiency of detection in accordance with its ability to measure radiation in the environment. Two SiPM based Scintillation detectors with LYSO, BGO and CsI:Tl scintillators were developed and the detectors were analyzed by a number of operating characteristics such as reverse bias, operating temperature and high magnetic field, that depend on environmental changes in radiation measurement. The Photon count rate and spectra were compared for these three scintillators. We found that there were variations in the radiation detection which were characterized by reverse bias, temperature and high magnetic field. It was also found that there was an 11.9% energy resolution for the LYSO, 15.5% for BGO and 13.5% for CsI:Tl using Array SiPM, and 18% for CsI:Tl energy resolution using single SiPM when we measured energy resolution of 511 keV for 22Na. These results demonstrate the potential widespread use of SiPM based compact radiation detectors for Homeland Security applications.

  1. EFFECT OF SURFACE PREPARATION TECHNIQUE ON THE RADIATION DETECTOR PERFORMANCEOF CDZNTE

    SciTech Connect

    Duff, M

    2007-05-23

    Synthetic CdZnTe (CZT) semiconducting crystals are highly suitable for the room temperature-based detection of gamma radiation. The surface preparation of Au contacts on surfaces of CZT detectors is typically conducted after (1) polishing to remove artifacts from crystal sectioning and (2) chemical etching, which removes residual mechanical surface damage however etching results in a Te rich surface layer that is prone to oxidize. Our studies show that CZT surfaces that are only polished (as opposed to polished and etched) can be contacted with Au and will yield lower surface currents. Due to their decreased dark currents, these as-polished surfaces can be used in the fabrication of gamma detectors exhibiting a higher performance than polished and etched surfaces with relatively less peak tailing and greater energy resolution. CdZnTe or ''CZT'' crystals are attractive to use in homeland security applications because they detect radiation at room temperature and do not require low temperature cooling as with silicon- and germanium-based detectors. Relative to germanium and silicon detectors, CZT is composed of higher Z elements and has a higher density, which gives it greater ''stopping power'' for gamma rays making a more efficient detector. Single crystal CZT materials with high bulk resistivity ({rho}>10{sup 10} {Omega} x cm) and good mobility-lifetime products are also required for gamma-ray spectrometric applications. However, several factors affect the detector performance of CZT are inherent to the as grown crystal material such as the presence of secondary phases, point defects and the presence of impurities (as described in a literature review by R. James and researchers). These and other factors can limit radiation detector performance such as low resistivity, which causes a large electronic noise and the presence of traps and other heterogeneities, which result in peak tailing and poor energy resolution.

  2. A liquid radiation detector with high spatial resolution

    NASA Technical Reports Server (NTRS)

    Alvarez, L.

    1972-01-01

    Detector, using point anode, minimizes problem of oblique tracks by permitting construction of very thin counter. Detector is useful in cosmic ray and high energy physics research and X-ray and neutron diffraction technology.

  3. Employing Carbon Nano-Tubes in New Nano-Structured Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Ambrosio, A.; Ambrosio, M.; Aramo, C.; Carillo, V.; Guarino, F.; Maddalena, P.; Grossi, V.; Passacantando, M.; Santucci, S.; Valentini, A.

    2010-04-01

    So far, electronics has growth up together with the possibility of designing electronic circuits based on the semi conductive properties of silicon. However, the last two decades has been characterized by the explosion of techniques allowing the observation and manipulation of materials at the nanometric length scale. For many applications, the role of silicon is thus turning towards that of a well known substrate whose surface is modified and decorated, at the nano-scale, with other materials. This configuration often represents a nano-structured material. Among all the materials involved in nano-science and nano-technology, Carbon Nano-Tubes (CNTs) have already been employed into a huge number of applications. Here we report the last results in designing a new radiation detector based on CNTs that appears promising for the aim of broadening the detection range of solid state radiation detectors.

  4. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  5. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  6. Transition Radiation Detector in the D0 colliding beam experiment at Fermilab

    SciTech Connect

    Piekarz, H.

    1995-04-01

    The construction, operation and response of the Transition Radiation Detector (TRD) at DO colliding beam experiment at Fermilab are presented. The use of the TRD signal to enhance electron identification and hadronic rejection in the multiparticle background characteristic for the antiproton-proton interactions at the center-of-mass energy of 1.8 TeV is also described and results are discussed.

  7. Examination results of the Three Mile Island radiation detector HP-R-212

    SciTech Connect

    Mueller, G.M.

    1983-12-01

    Area radiation detector HP-R-212 was removed from the Three Mile Island containment building on November 13, 1981. The detector apparently started to fail during November 1979 and by the first part of December 1979 the detector readings had degraded from 1 R/hr to 20 mR/hr. This report discusses the cause of failure, detector radiation measurement characteristics, and our estimates of the total gamma radiation dose received by the detector electronics.

  8. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  9. Radiation detector

    DOEpatents

    Fultz, Brent T.

    1983-01-01

    Apparatus is provided for detecting radiation such as gamma rays and X-rays generated in backscatter Mossbauer effect spectroscopy and X-ray spectrometry, which has a large "window" for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  10. Radiation detector

    DOEpatents

    Fultz, B.T.

    1980-12-05

    Apparatus is provided for detecting radiation such as gamma rays and x-rays generated in backscatter Moessbauer effect spectroscopy and x-ray spectrometry, which has a large window for detecting radiation emanating over a wide solid angle from a specimen and which generates substantially the same output pulse height for monoenergetic radiation that passes through any portion of the detection chamber. The apparatus includes a substantially toroidal chamber with conductive walls forming a cathode, and a wire anode extending in a circle within the chamber with the anode lying closer to the inner side of the toroid which has the least diameter than to the outer side. The placement of the anode produces an electric field, in a region close to the anode, which has substantially the same gradient in all directions extending radially from the anode, so that the number of avalanche electrons generated by ionizing radiation is independent of the path of the radiation through the chamber.

  11. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  12. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  13. Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

    2007-01-01

    Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

  14. X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors

    DOE PAGESBeta

    Nelson, A. J.; Voss, L. F.; Beck, P. R.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Lee, J. -S.; Kim, H.; Cirignano, L.; et al

    2013-01-12

    We subjected device-grade TlBr to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl2, Br:MeOH and HF solutions. High-resolution photoemission measurements on the valence band electronic structure and Tl 4f, Br 3d, Cl 2p and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence band electronic structure were correlated with the goal of optimizing the long-term stability and radiation response.

  15. High-energy cosmic-ray electrons - A new measurement using transition-radiation detectors

    NASA Technical Reports Server (NTRS)

    Hartmann, G.; Mueller, D.; Prince, T.

    1977-01-01

    A new detector for cosmic-ray electrons, consisting of a combination of a transition-radiation detector and a shower detector, has been constructed, calibrated at accelerator beams, and exposed in a balloon flight under 5 g/sq cm of atmosphere. The design of this instrument and the methods of data analysis are described. Preliminary results in the energy range 9-300 GeV are presented. The energy spectrum of electrons is found to be significantly steeper than that of protons, consistent with a long escape lifetime of cosmic rays in the galaxy.

  16. Use of radiation detectors in remote monitoring for containment and surveillance

    SciTech Connect

    Dupree, S.A.; Ross, M.; Bonino, A.; Lucero, R.; Hasimoto, Yu

    1998-07-01

    Radiation detectors have been included in several remote monitoring field trial systems to date. The present study considers detectors at Embalse, Argentina, and Oarai, Japan. At Embalse four gamma detectors have been operating in the instrumentation tubes of spent fuel storage silos for up to three years. Except for minor fluctuations, three of the detectors have operated normally. One of the detectors appears never to have operated correctly. At Oarai two gamma detectors have been monitoring a spent-fuel transfer hatch for over 18 months. These detectors have operated normally throughout the period, although one shows occasional noise spikes.

  17. Ion Microbeam Studies of Cadmium Zinc Telluride Radiation Detectors by IBICC

    SciTech Connect

    Brunett, B.A.; Doyle, B.L.; James, R.B.; Olsen, R.W.; Vizkelethy, G.; Walsh, D.S.

    1998-10-26

    Ion Beam Induced Charge Collection (IBICC) and Time Resolved IBICC (TRIBICC) techniques were e for imaging electronic properties of Cadmium Zinc Telluride (CZT) room temperature radiation detectors. The detectors were bombarded with a scanned 5.4 MeV He microbeam and the detector response was analyzed at each point. The electron mobility (A) and Metime (z.), and charge collection efficiency maps were calculated from the data. In order to determine the radiation damage to the detectors, the signal deteriomtion was measured as the function of dose.

  18. Radiation detector using a bulk high T[sub c] superconductor

    DOEpatents

    Artuso, J.F.; Franks, L.A.; Hull, K.L.; Symko, O.G.

    1993-12-07

    A radiation detector is provided, wherein a bulk high T[sub c] superconducting sample is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil which is coupled by an input coil to an rf SQUID. 4 figures.

  19. Large-volume high-resolution cadmium zinc telluride radiation detectors: recent developments

    NASA Astrophysics Data System (ADS)

    Chen, H.; Awadalla, S. A.; Iniewski, K.; Lu, P. H.; Harris, F.; Mackenzie, J.; Hasanen, T.; Chen, W.; Redden, R.; Bindley, G.; Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Luke, P.; Amman, M.; Lee, J. S.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; James, R. B.

    2007-09-01

    The excellent room temperature spectral performance of cadmium zinc telluride detectors grown via the Traveling Heater Method (THM) makes this approach suitable for the mass deployment of radiation detectors for applications in homeland security and medical imaging. This paper reports our progress in fabricating thicker and larger area detectors from THM grown CZT. We discuss the performance of such 20x20x10 mm 3, and 10x10x10 mm 3 monolithic pixellated detectors and virtual Frisch-Grid 4x4x12 mm3 devices, and describe the various physical properties of the materials.

  20. GEMGrid: a wafer post-processed GEM-like radiation detector

    NASA Astrophysics Data System (ADS)

    Blanco Carballo, V. M.; Bilevych, Y.; Chefdeville, M.; Fransen, M.; van der Graaf, H.; Salm, C.; Schmitz, J.; Timmermans, J.

    2009-09-01

    This paper presents a new wafer post-processed micropatterned gaseous radiation detector called GEMGrid. The device consists of a GEM-like structure fabricated with SU-8 photoresist directly on top of a Timepix chip with zero gap distance. The detector characteristics have been studied in several gas mixtures. The device is capable of tracking minimum ionizing particles and exhibits good energy resolution on 55Fe decays. We further show a strongly improved mechanical robustness of these GEM-like structures as compared to a pillar-supported integrated Micromegas.

  1. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  2. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, S.; Kross, B.J.; Zorn, C.J.; Majewski, L.A.

    1996-10-22

    An optimized examination system and method based on the Reverse Geometry X-Ray{trademark} (RGX{trademark}) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging. 5 figs.

  3. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOEpatents

    Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

    1996-01-01

    An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

  4. Use of Sub-bandgap Illumination to Improve Radiation Detector Resolution of CdZnTe

    NASA Astrophysics Data System (ADS)

    Duff, Martine C.; Washington, Aaron L.; Teague, Lucile C.; Wright, Jonathan S.; Burger, Arnold; Groza, Michael; Buliga, Vladimir

    2015-09-01

    The performance of Cd1- x Zn x Te (CZT) materials for room-temperature gamma/x-ray radiation detection continues to improve in terms of material quality and detector design. In our prior publications, we investigated the use of multiple wavelengths of light (in the visible and infrared) to target charge carriers at various trap energies and physical positions throughout crystals. Light exposure significantly alters the charge mobility and improves carrier collection at the anode contact. This study presents an investigation of material performance as a radiation detector during such illumination. The decrease in charge trapping and increase in charge collection due to a higher probability of free electron release from traps contributed to an increase in the resolution-based performance of the detector through controlled illumination. We investigated the performance improvement of CZT crystals with previously known levels of intrinsic defects and secondary phases, at various voltages, light-emitting diode (LED) light wavelengths, and shaping times. Although our setup was clearly not optimized for radiation detector performance, it demonstrated substantial resolution improvements (based on full-width at half-maximum using 662-keV gamma rays from 137Cs upon illumination with 950-nm light) of 16% to 38% in comparison with unilluminated CZT under similar conditions. This manuscript includes discussion of the electrooptic behavior and its effect on performance. Additional testing and fabrication of a detector that incorporates such LED light optimization could lead to improved performance with existing detector-grade materials.

  5. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  6. Experimental researches on quantum transport in semiconductor two-dimensional electron systems

    PubMed Central

    Kawaji, Shinji

    2008-01-01

    The author reviews contribution of Gakushuin University group to the progress of the quantum transport in semiconductor two-dimensional electron systems (2DES) for forty years from the birth of the 2DES in middle of the 1960s till the finding of temperature dependent collapse of the quantized Hall resistance in the beginning of this century. PMID:18941299

  7. Radiation detectors fabricated on high-purity GaAs epitaxial materials

    NASA Astrophysics Data System (ADS)

    Wu, X.; Kostamo, P.; Gädda, A.; Nenonen, S.; Riekkinen, T.; Härkönen, J.; Salonen, J.; Andersson, H.; Zhilyaev, Y.; Fedorov, L.; Eränen, S.; Mattila, M.; Lipsanen, H.; Prunnila, M.; Kalliopuska, J.; Oja, A.

    2014-12-01

    Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

  8. Measurement of a high electrical quality factor in a niobium resonator for a gravitational radiation detector

    NASA Technical Reports Server (NTRS)

    Folkner, W. M.; Moody, M. V.; Richard, J.-P.

    1989-01-01

    The mechanical and electrical quality factors of a 10-g niobium resonator were measured at 4.4 K and were found to be 8.1 x 10 to the 6th, and 3.8 x 10 to the 6th, respectively. The value for the electrical quality factor is high enough for a system operating at 50 mK at a sensitivity level of one phonon. The resonator's low damping properties make it suitable for use as a transducer for a cryogenic three-mode gravitational radiation detector. A practical design is given for the mounting of the resonator on a 2400-kg aluminum-bar detector. Projections are made for the sensitivity of a 2400-kg bar instrumented as a three-mode system with this resonator inductively coupled to a SQUID.

  9. Radiation detector using a bulk high T.sub.c superconductor

    DOEpatents

    Artuso, Joseph F.; Franks, Larry A.; Hull, Kenneth L.; Symko, Orest G.

    1993-01-01

    A radiation detector (10) is provided, wherein a bulk high T.sub.c superconducting sample (11) is placed in a magnetic field and maintained at a superconducting temperature. Photons of incident radiation will cause localized heating in superconducting loops of the sample destroying trapped flux and redistributing the fluxons, and reducing the critical current of the loops. Subsequent cooling of the sample in the magnetic field will cause trapped flux redistributed Abrikosov fluxons and trapped Josephson fluxons. The destruction and trapping of the fluxons causes changes in the magnetization of the sample inducing currents in opposite directions in a pickup coil (12) which is coupled by an input coil (15) to an rf SQUID (16).

  10. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    SciTech Connect

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.; Xerox Palo Alto Research Center, CA )

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs.

  11. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  12. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    NASA Astrophysics Data System (ADS)

    Milián-Sánchez, V.; Mocholí-Salcedo, A.; Milián, C.; Kolombet, V. A.; Verdú, G.

    2016-08-01

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates.

  13. A transition radiation detector for RHIC featuring accurate tracking and dE/dx particle identification

    SciTech Connect

    O`Brien, E.; Lissauer, D.; McCorkle, S.; Polychronakos, V.; Takai, H.; Chi, C.Y.; Nagamiya, S.; Sippach, W.; Toy, M.; Wang, D.; Wang, Y.F.; Wiggins, C.; Willis, W.; Cherniatin, V.; Dolgoshein, B.; Bennett, M.; Chikanian, A.; Kumar, S.; Mitchell, J.T.; Pope, K.

    1991-12-31

    We describe the results of a test ran involving a Transition Radiation Detector that can both distinguish electrons from pions which momenta greater titan 0.7 GeV/c and simultaneously track particles passing through the detector. The particle identification is accomplished through a combination of the detection of Transition Radiation from the electron and the differences in electron and pion energy loss (dE/dx) in the detector. The dE/dx particle separation is most, efficient below 2 GeV/c while particle ID utilizing Transition Radiation effective above 1.5 GeV/c. Combined, the electron-pion separation is-better than 5 {times} 10{sup 2}. The single-wire, track-position resolution for the TRD is {approximately}230 {mu}m.

  14. Improved fabrication of HgI/sub 2/ nuclear radiation detectors by machine-cleaving

    SciTech Connect

    Levi, A.; Burger, A.; Schieber, M.; Vandenberg, L.; Yellon, W.B.; Alkire, R.W.

    1982-01-01

    The perfection of machine-cleaved sections from HgI/sub 2/ bulk crystals was examined. The perfection of the machine-cleaved sections as established by gamma diffraction rocking curves was found to be much better than the perfection of hand-cleaved sections or as grown thin platelets, reaching a perfection similar to that of the wire-sawn sections of HgI/sub 2/. A correlation between the perfection and the thickness of the machine-cleaved section was also found, i.e., the thicker the cleaved-section the more perfect it is. The reproducibility of the fabrication was significantly improved by using machine cleaving in the process of fabrication. Large single crystals of HgI/sub 2/ weighing 20 to 200 g, can be grown from the vapor phase using the TOM Technique. In order to fabricate nuclear radiation detectors from these single crystals, thin sections of about 0.4 to 0.8 mm thickness have to be prepared. Up till now, the state-of-the-art of fabricating HgI/sub 2/ nuclear radiation detectors involved two methods to get thin sections from the large single crystals: (1) hand-cleaving using a razor-blade and (2) solution wire sawing. The chemical wire sawing method involves a loss of about 50% of the crystal volume and is usually followed by a chemical polishing process which involves a significant loss of volume of the original volume. This procedure is complicated and wasteful. The traditional fabrication method, i.e., hand-cleaving followed by rapid nonselective chemical etching, is simpler and less wasteful.

  15. Prototype Radiation Detector Positioning System For The Automated Nondestructive Assay Of Uf6 Cylinders

    SciTech Connect

    Hatchell, Brian K.; Valdez, Patrick LJ; Orton, Christopher R.; Mace, Emily K.

    2011-08-07

    International Atomic Energy Agency (IAEA) inspectors currently perform periodic inspections at uranium enrichment plants to verify UF6 cylinder enrichment declarations. Measurements are typically performed with handheld high-resolution sensors on a sampling of cylinders taken to be representative of the facility’s entire cylinder inventory. These measurements are time-consuming, expensive, and assay only a small fraction of the total cylinder volume. An automated nondestructive assay system capable of providing enrichment measurements over the full volume of the cylinder could improve upon current verification practices in terms of efficiency and assay accuracy. This paper describes an approach denoted the Integrated Cylinder Verification Station (ICVS) that supports 100% cylinder verification, provides volume-averaged cylinder enrichment assay, and reduces inspector manpower needs. To allow field measurements to be collected to validate data collection algorithms, a prototype radiation detector positioning system was constructed. The system was designed to accurately position an array of radiation detectors along the length of a cylinder to measure UF6 enrichment. A number of alternative radiation shields for the detectors were included with the system. A collimated gamma-ray spectrometer module that allows translation of the detectors in the surrounding shielding to adjust the field of view, and a collimating plug in the end to further reduce the low-energy field of view, were also developed. Proof-of-principle measurements of neutron and high-energy gamma-ray signatures, using moderated neutron detectors and large-volume spectrometers in a fixed-geometry, portal-like configuration, supported an early assessment of the viability of the concept. The system has been used successfully on two testing campaigns at an AREVA fuel fabrication plant to scan over 30 product cylinders. This paper will describe the overall design of the detector positioning system and

  16. The Physics of Semiconductors

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius

    The historic development of semiconductor physics and technology began in the second half of the 19th century. Interesting discussions of the early history of the physics and chemistry of semiconductors can be found in treatises of G. Busch [2] and Handel [3]. The history of semiconductor industry can be followedin the text of Morris [4] and Holbrook et al. [5]. In 1947, the realization of the transistor was the impetus to a fast-paced development that created the electronics and photonics industries. Products founded on the basis of semiconductor devices such as computers (CPUs, memories), optical-storage media (lasers for CD, DVD), communication infrastructure (lasers and photodetectors for optical-fiber technology, high frequency electronics for mobile communication), displays (thin film transistors, LEDs), projection (laser diodes) and general lighting (LEDs) are commonplace. Thus, fundamental research on semiconductors and semiconductor physics and its offspring in the form of devices has contributed largely to the development of modern civilization and culture.

  17. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  18. Research progress in radiation detectors, pattern recognition programs, and radiation damage determination in DNA

    NASA Technical Reports Server (NTRS)

    Baily, N. A.

    1973-01-01

    The radiological implications of statistical variations in energy deposition by ionizing radiation were investigated in the conduct of the following experiments: (1) study of the production of secondary particles generated by the passage of the primary radiation through bone and muscle; (2) the study of the ratio of nonreparable to reparable damage in DNA as a function of different energy deposition patterns generated by X rays versus heavy fast charged particles; (3) the use of electronic radiography systems for direct fluoroscopic tomography and for the synthesis of multiple planes and; (4) the determination of the characteristics of systems response to split fields having different contrast levels, and of minimum detectable contrast levels between the halves under realistic clinical situations.

  19. Introduction to fifth international workshop on mercuric iodide nuclear radiation detectors

    SciTech Connect

    Schieber, M.

    1982-01-01

    Mercuric iodide is a wide bandgap semiconductor, with Eg approx. = 2.14 eV at room temperature. Therefore, HgI/sub 2/ is totally different from the well-studied, narrower gap, elemental semiconductors such as Si and Ge, and also different in its physical and chemical properties from the known semiconductor binary zinc-blend compounds such as GaAs or InP. The purpose of studies in the last decade was to further our understanding of HgI/sub 2/; recent progress is reported. (WHK)

  20. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    SciTech Connect

    Cho, Gyuseong

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  1. Improving the growth of CZT crystals for radiation detectors: a modeling perspective

    NASA Astrophysics Data System (ADS)

    Derby, Jeffrey J.; Zhang, Nan; Yeckel, Andrew

    2012-10-01

    The availability of large, single crystals of cadmium zinc telluride (CZT) with uniform properties is key to improving the performance of gamma radiation detectors fabricated from them. Towards this goal, we discuss results obtained by computational models that provide a deeper understanding of crystal growth processes and how the growth of CZT can be improved. In particular, we discuss methods that may be implemented to lessen the deleterious interactions between the ampoule wall and the growing crystal via engineering a convex solidification interface. For vertical Bridgman growth, a novel, bell-curve furnace temperature profile is predicted to achieve macroscopically convex solid-liquid interface shapes during melt growth of CZT in a multiple-zone furnace. This approach represents a significant advance over traditional gradient-freeze profiles, which always yield concave interface shapes, and static heat transfer designs, such as pedestal design, that achieve convex interfaces over only a small portion of the growth run. Importantly, this strategy may be applied to any Bridgman configuration that utilizes multiple, controllable heating zones. Realizing a convex solidification interface via this adaptive bell-curve furnace profile is postulated to result in better crystallinity and higher yields than conventional CZT growth techniques.

  2. Precise dose evaluation using a commercial phototransistor as a radiation detector.

    PubMed

    Santos, L A P; Barros, F R; Filho, J A; da Silva, E F

    2006-01-01

    An experimental arrangement and a circuitry based on an NPN phototransistor-type silicon radiation detector have been used for evaluating the X-ray beam dose in the diagnostic range. The circuitry was built to allow alteration of the electric field in the phototransistor internal structure, with some devices that have an available base connection. By changing the transistor base bias it is possible to alter its operation point to obtain a response gain from the selected photon energy range. In this way we have made an electronic energy-domain discretisation and we are investigating a model to calculate the dose contribution from each energy discretised into 10 keV steps. The method has been tested in filtered radiation beams generated from an HF-160 Pantak X-ray unit and compared with the usual dosimetry method. Our results have demonstrated that it is possible to make such a dose deconvolution from 40 to 140 keV energies by controlling the phototransistor base bias properly. PMID:16702243

  3. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    SciTech Connect

    Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

    2015-04-28

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

  4. SoftWare for Optimization of Radiation Detectors, SWORD Version 5.0.

    Energy Science and Technology Software Center (ESTSC)

    2013-10-23

    Version 05 SoftWare for Optimization of Radiation Detectors (SWORD) is a framework to allow easy simulation and evaluation of radiation detection systems. It is targeted at system designers, who want to evaluate and optimize system parameters without actually building hardware first, at sponsors who need to evaluate proposed or actual system designs independent of the supplier, without having access to actual hardware, and at operators who want to use simulation to evaluate observed phenomena. SWORDmore » is vertically integrated and modular. It allows users to define their own radiation detection instruments by building them from basic geometric “objects” and assigning those objects materials, detection, and/or radioactive emission properties. This process is accomplished by a CAD-like graphical user interface, in which objects may be defined, translated, rotated, grouped, arrayed, and/or nested to produce compound objects. In addition to providing the ability to build a detection system model from scratch, SWORD provides a library of “standard” detector design objects that can be used “as is” or modified by the user.« less

  5. A Compact Combinatorial Device for Measurement of Nonlinearity of Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Saunders, P.; White, D. R.; Edgar, H.

    2015-03-01

    A new compact computer-controlled device using a combinatorial technique for measuring the nonlinearity of radiation detectors is described. The device consists of two sets of four beam-splitter cubes optically cemented together and arranged so that radiation from a single source is split into four separate paths, then recombined after passing through one of five neutral density filters placed in each path. This allows for the measurement of 625 approximately equi-spaced inter-related flux levels based on only 16 unknown transmittance values. These can be solved for by least-squares fitting, leaving 609 degrees of freedom remaining to determine the nonlinearity of the detector. A novel aspect of the design is the use of neutral density glass plates optically cemented along all the external faces of the beam-splitter cubes, which act as beam dumps for any reflected or scattered radiation. The cube faces in the desired beam paths have clear glass plates with an anti-reflection coating applied at the wavelength of interest optically cemented to them. Operation at other wavelengths is achieved by simply replacing these plates with plates coated for the new wavelength. The performance of the device has been tested using a silicon photodiode with a collimated 650 nm LED as the source. The results demonstrate that the device is able to measure linearity to better than 1 part in.

  6. SoftWare for Optimization of Radiation Detectors, SWORD Version 5.0.

    SciTech Connect

    STRICKMAN, MARK S.

    2013-10-23

    Version 05 SoftWare for Optimization of Radiation Detectors (SWORD) is a framework to allow easy simulation and evaluation of radiation detection systems. It is targeted at system designers, who want to evaluate and optimize system parameters without actually building hardware first, at sponsors who need to evaluate proposed or actual system designs independent of the supplier, without having access to actual hardware, and at operators who want to use simulation to evaluate observed phenomena. SWORD is vertically integrated and modular. It allows users to define their own radiation detection instruments by building them from basic geometric “objects” and assigning those objects materials, detection, and/or radioactive emission properties. This process is accomplished by a CAD-like graphical user interface, in which objects may be defined, translated, rotated, grouped, arrayed, and/or nested to produce compound objects. In addition to providing the ability to build a detection system model from scratch, SWORD provides a library of “standard” detector design objects that can be used “as is” or modified by the user.

  7. Data-driven exploration of the ionization-phonon partitioning in scintillating radiation detector materials

    SciTech Connect

    Ferris, Kim F.; Webb-Robertson, Bobbie-Jo M.; Jordan, David V.; Jones, Dumont M.

    2008-06-01

    An information-based approach to scintillating materials development has been applied to ranking the alkali halide and alkali earth halide series in terms of their energy conversion efficiency. The efficiency of scintillating radiation detection materials can be viewed as the product of a consecutive series of electronic processes (energy conversion, transfer, and luminescence) as outlined by Lempicki and others. Relevant data are relatively sparse, but sufficient for the development of forward mapping of materials properties through materials signatures. These mappings have been used to explore the limits of the K ratio in the Lempicki model with chemical composition, and examine its relationship with another common design objective, density. The alkali halides and alkali earth halide compounds separate themselves into distinct behavior classes favoring heavier cations and anions for improved K ratio. While the coupling of ionization is strongly related to the optical phonon modes, both dielectric and band gap contributions cannot be ignored. When applied within a candidate screen, the resulting model for K imposes design rules—simple structural restrictions—on scintillating radiation detector materials.

  8. Performance of the Time Expansion Chamber / Transition Radiation Detector in PHENIX Experiment at RHIC

    NASA Astrophysics Data System (ADS)

    Luiz Silva, Cesar

    2004-10-01

    The Time Expansion Chamber / Transition Radiation Detector (TEC/TRD) in the PHENIX Experiment at RHIC measures ionization losses (dE/dX) and transition radiation from charged particles produced by beam collisions. It is designed to perform tracking and identification for charged particles on very high particle multiplicity environment. The TEC/TRD consists of 24 wire chambers readout on both sides filled with recycled Xe-based gas mixture. This wire chamber configuration, besides providing measurements of ionization losses for charged particles, can absorb X-Ray photons generated by transition radiation from incident particles with γ>1000 crossing fiber radiators placed at the entrance of the chambers. This allows TEC/TRD to distinguish electrons from the huge pion signal produced over a broad momentum range (1GeV/c

  9. A microfabricated steel and glass radiation detector with inherent wireless signaling

    NASA Astrophysics Data System (ADS)

    Eun, Christine K.; Gianchandani, Yogesh B.

    2011-01-01

    This paper describes an investigation of the performance compromises imposed by a manufacturing approach that utilizes lithographic micromachining processes to fabricate a wireless beta/gamma radiation detector. The device uses in-package assembly of stainless steel electrodes and glass spacers. These elements are micromachined using photochemical etching and powder blasting, respectively. The detector utilizes a commercial, TO-5 package that is hermetically sealed at 760 Torr with an Ar fill-gas. Gas microdischarges between the electrodes, which are initiated by the radiation, transmit wideband wireless signals. The detector diameter and height are 9 and 9.6 mm, respectively, and it weighs 0.97 g. The device performance has been characterized using various sealed, radioisotope sources, e.g., 30-99 µCi from 137Cs (which is a beta and gamma emitter) and 0.1 µCi from 90Sr (which is a pure beta emitter). It has a measured output of >15.5 counts s-1 when in close proximity to 99 µCi from 137Cs. The wireless signaling spans 1.25 GHz at receiving antenna-to-detector distances >89 cm, when in close proximity to a 0.1 µCi 90Sr source. The estimated intrinsic detection efficiency (i.e. with the background rate subtracted) is 3.34% as measured with the biasing arrangement described in the paper.

  10. Preliminary Results from an Investigation into Nanostructured Nuclear Radiation Detectors for Non-Proliferation Applications

    SciTech Connect

    ,

    2012-10-01

    In recent years, the concept of embedding composite scintillators consisting of nanosized inorganic crystals in an organic matrix has been actively pursued. Nanocomposite detectors have the potential to meet many of the homeland security, non-proliferation, and border and cargo-screening needs of the nation and, by virtue of their superior nuclear identification capability over plastic, at roughly the same cost as plastic, have the potential to replace all plastic detectors. Nanocomposites clearly have the potential of being a gamma ray detection material that would be sensitive yet less expensive and easier to produce on a large scale than growing large, whole crystals of similar sensitivity. These detectors would have a broad energy range and a sufficient energy resolution to perform isotopic identification. The material can also be fabricated on an industrial scale, further reducing cost. This investigation focused on designing and fabricating prototype core/shell and quantum dot (QD) detectors. Fourteen core/shell and four QD detectors, all with the basic consistency of a mixture of nanoparticles in a polymer matrix with different densities of nanoparticles, were prepared. Nanoparticles with sizes <10 nm were fabricated, embedded in a polystyrene matrix, and the resultant scintillators’ radiation detector properties were characterized. This work also attempted to extend the gamma energy response on both low- and high-energy regimes by demonstrating the ability to detect low-energy and high-energy gamma rays. Preliminary results of this investigation are consistent with a significant response of these materials to nuclear radiation.

  11. Technical Note: Response measurement for select radiation detectors in magnetic fields

    SciTech Connect

    Reynolds, M.; Fallone, B. G.; Rathee, S.

    2015-06-15

    Purpose: Dose response to applied magnetic fields for ion chambers and solid state detectors has been investigated previously for the anticipated use in linear accelerator–magnetic resonance devices. In this investigation, the authors present the measured response of selected radiation detectors when the magnetic field is applied in the same direction as the radiation beam, i.e., a longitudinal magnetic field, to verify previous simulation only data. Methods: The dose response of a PR06C ion chamber, PTW60003 diamond detector, and IBA PFD diode detector is measured in a longitudinal magnetic field. The detectors are irradiated with buildup caps and their long axes either parallel or perpendicular to the incident photon beam. In each case, the magnetic field dose response is reported as the ratio of detector signals with to that without an applied longitudinal magnetic field. The magnetic field dose response for each unique orientation as a function of magnetic field strength was then compared to the previous simulation only studies. Results: The measured dose response of each detector in longitudinal magnetic fields shows no discernable response up to near 0.21 T. This result was expected and matches the previously published simulation only results, showing no appreciable dose response with magnetic field. Conclusions: Low field longitudinal magnetic fields have been shown to have little or no effect on the dose response of the detectors investigated and further lend credibility to previous simulation only studies.

  12. Towards thin-film self-powered radiation detectors employing disparate conductive layers

    NASA Astrophysics Data System (ADS)

    Brivio, D.; Sajo, E.; Zygmanski, P.

    2015-06-01

    A new class of self-powered thin film radiation detectors is experimentally explored via their IV-curve characteristics. These detectors are parallel-plane microstructures composed of disparate atomic number (Z) thin-film electrodes separated by air gaps. Large radiation-induced electron currents (RIC) are observed for zero external voltage bias. Compared to ionization chambers (composed of macroscopic non-disparate low-Z electrodes), this anomalous behavior is due to two independent effects: traversal of fast electrons leaking from the high-Z cathodes and the auto-collection of ionization electrons from the air gap due to the presence of contact potential. The zero voltage current reaches up to 80% of the saturation current measured for non-zero bias voltages. The magnitude of saturation currents increases with the total anode and cathode atomic numbers. The stopping potentials (i.e., external voltage bias resulting in zero RIC current) correspond to the differences in the electrodes’ work functions (the contact potential) modified by the contributions from the fast electron current formed by the leaking electrons. These features make the thin film detector attractive for applications in x-ray medical or industrial imaging, dosimetry and radiation protection.

  13. Surface passivation of III-V semiconductors for future CMOS devices—Past research, present status and key issues for future

    NASA Astrophysics Data System (ADS)

    Hasegawa, H.; Akazawa, M.; Domanowska, A.; Adamowicz, B.

    2010-07-01

    Currently, III-V metal-insulator-semiconductor field effect transistors (MISFETs) are considered to be promising device candidates for the so-called "More Moore Approach" to continue scaling CMOS transistors on the silicon platform. Strong interest also exists in III-V nanowire MISFETs as a possible candidate for a "Beyond CMOS"-type device. III-V sensors using insulator-semiconductor interfaces are good candidates for "More Moore"-type of devices on the Si platform. The success of these new approaches for future electronics depends on the availability of a surface passivation technology which can realize pinning-free, high-quality interfaces between insulator and III-V semiconductors. This paper reviews the past history, present status and key issues of the research on the surface passivation technology for III-V semiconductors. First, a brief survey of previous research on surface passivation and MISFETs is made, and Fermi level pinning at insulator-semiconductor interface is discussed. Then, a brief review is made on recent approaches of interface control for high-k III-V MIS structures. Subsequently, as an actual example of interface control, latest results on the authors' surface passivation approach using a silicon interface control layer (Si ICL) are discussed. Finally, a photoluminescence (PL) method to characterize the interface quality is presented as an efficient contactless and non-destructive method which can be applied at each step of interface formation process without fabrication of MIS capacitors and MISFETs.

  14. In vivo dosimetry for gynaecological brachytherapy using a novel position sensitive radiation detector: Feasibility study

    SciTech Connect

    Reniers, B.; Landry, G.; Eichner, R.; Hallil, A.; Verhaegen, F.

    2012-04-15

    Purpose: In gynecological radiotherapy with high dose rate (HDR){sup 192}Ir brachytherapy, the treatment complexity has increased due to improved optimization techniques and dose constraints. As a consequence, it has become more important to verify the dose delivery to the target and also to the organs at risk (e.g., the bladder). In vivo dosimetry, where dosimeters are placed in or on the patient, is one way of verifying the dose but until recently this was hampered by motion of the radiation detectors with respect to the source. The authors present a novel dosimetry method using a position sensitive radiation detector. Methods: The prototype RADPOS system (Best Medical Canada) consists of a metal oxide field effect transistor (MOSFET) dosimeter coupled to a position-sensor, which deduces its 3D position in a magnetic field. To assess the feasibility of in vivo dosimetry based on the RADPOS system, different characteristics of the detector need to be investigated. Using a PMMA phantom, the positioning accuracy of the RADPOS system was quantified by comparing position readouts with the known position of the detector along the x and y-axes. RADPOS dose measurements were performed at various distances from a Nucletron{sup 192}Ir source in a PMMA phantom to evaluate the energy dependence of the MOSFET. A sensitivity analysis was performed by calculating the dose after varying (1) the position of the RADPOS detector to simulate organ motion and (2) the position of the first dwell position to simulate errors in delivery. The authors also performed an uncertainty analysis to determine the action level (AL) that should be used during in vivo dosimetry. Results: Positioning accuracy is found to be within 1 mm in the 1-10 cm range from the origin along the x-axis (away from the transmitter), meeting the requirements for in vivo dosimetry. Similar results are obtained for the other axes. The ALs are chosen to take into account the total uncertainty on the measurements. As a

  15. Implementation of a preamplifier-amplifier system for radiation detectors used in Mössbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Velásquez, A. A.; Arroyave, M.

    2014-01-01

    We report the assembly and testing of a preamplification and amplification system for pulses produced by gaseous radiation detectors commonly used in Mössbauer spectroscopy. The system is composed by a pair of commercial integrated circuits A203 and A206, which operate as charge sensitive preamplifier-shaping amplifier and linear amplifier-low level discriminator, respectively. The integrated circuits were interconnected in the unipolar output mode and placed inside a metallic shielding, which prevents noise amplification for a suitable signal-noise ratio. The system was tested by irradiating a proportional counter LND-45431 with characteristic X rays of 6.3 keV and gamma rays of 14.4 keV emitted by a Mössbauer radioactive source of 57Co (Rh). Unipolar pulses with Gaussian profile were obtained at the output of the linear amplifier, whose amplitudes were close to 0.4 V for 6.3 keV X rays and 1.4 V for 14.4 keV gamma rays. Pulse height spectra showed that the system allows a satisfactory identification of the X-rays and gamma rays emitted by the 57Co source, giving the possibility to make a good selection of the 14.4 keV peak for having a suitable signal-noise ratio in the Mössbauer spectra. Absorption percentages of 14 % were found by taking the Mössbauer spectra of a natural iron absorber. The assembly and tests of the system are presented through this paper.

  16. Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

    SciTech Connect

    Hong, Wan-Shick

    1995-04-01

    Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application. Thick(-{approximately}50 {mu}m), device quality a-Si:H p-i-n diodes for direct detection of minimum ionizing particles have been prepared with low internal stress by a combination of low temperature growth, He-dilution of silane, and post annealing. The structure of the new film contained voids and tiny crystalline inclusions and was different from the one observed in conventional a-Si:H. Deposition on patterned substrates was attempted as an alternative to controlling deposition parameters to minimize substrate bending and delamination of thick a-Si:H films. Growth on an inversed-pyramid pattern reduced the substrate bending by a factor of 3{approximately}4 for the same thickness film. Thin (0.1 {approximately} 0.2 {mu}m) films of a-Si:H and a-SiC:H have been applied to microstrip gas chambers to control gain instabilities due to charges on the substrate. Light sensitivity of the a-Si:H sheet resistance was minimized and the surface resistivity was successfully` controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient} by carbon alloying and boron doping. Performance of the detectors with boron-doped a-Si:C:H layers was comparable to that of electronic-conducting glass. Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications.

  17. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    NASA Astrophysics Data System (ADS)

    Nelson, Kyle A.; Geuther, Jeffrey A.; Neihart, James L.; Riedel, Todd A.; Rojeski, Ronald A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2012-07-01

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the 10B-lined counter.

  18. High purity liquid phase epitaxial GaAs for radiation detectors

    SciTech Connect

    Wynne, D.I.; Haller, E.E.; Rossington Tull, C.S.

    1998-12-31

    The authors report on the growth of high purity n-GaAs using Liquid Phase Epitaxy (LPE) and the fabrication of room temperature p-i-n radiation detectors. The epilayers are grown from a Ga solvent in a graphite boat in a pure hydrogen atmosphere. Growth is started at a temperature of approximately 800 C. The best epilayers show a net-residual-donor concentration of 2 {times} 10{sup 13} cm{sup {minus}3}, confirmed by Hall effect measurements. The residual donors have been analyzed by far infrared spectroscopy and found to be sulfur and silicon. Epilayers with thicknesses of up to 120 {micro}m have been deposited on 650 {micro}m thick semi-insulating GaAs substrates and on 500 {micro}m thick n{sup +}-type GaAs substrates. The authors report the results obtained with Schottky barrier diodes fabricated from these high purity n-type GaAs epilayers and operated as X-ray detectors. The Schottky barrier contacts consisted of evaporated circular gold contacts on epilayers on n{sup +} substrates. The ohmic contacts were formed by evaporated and alloyed Ni-Ge-Au films on the back of the substrate. Several of the diodes exhibit currents of the order of 1 to 10 nA at reverse biases depleting approximately 50 {micro}m of the epilayer. This very encouraging result, demonstrating the possibility for fabricating GaAs p-i-n diodes with depletion layers in high purity GaAs instead of semi-insulating GaAs, is supported by similar results obtained by several other groups. The consequences of using high purity instead of semi-insulating GaAs will be much reduced charge carrier trapping. Diode electrical characteristics and detector performance results using {sup 55}Fe and {sup 241}Am radiation will be discussed.

  19. Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein

    DOEpatents

    Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.

    2004-04-27

    A radiation detector system includes detectors having different properties (sensitivity, energy resolution) which are combined so that excellent spectral information may be obtained along with good determinations of the radiation field as a function of position.

  20. Radiation detection system using semiconductor detector with differential carrier trapping and mobility

    DOEpatents

    Whited, Richard C.

    1981-01-01

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  1. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  2. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  3. Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

    PubMed

    Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

    2015-06-01

    Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed. PMID:25979739

  4. Interfacial Chemistry and the Performance of Bromine-etched CdZnTe Radiation Detector Devices

    SciTech Connect

    Rouse, Ambrosio A.; Szeles, Csaba; Ndap, Jean-Oliver; Soldner, Steve; Parnham, K B.; Gaspar, Dan J.; Engelhard, Mark H.; Lea, Alan S.; Shutthanandan, V; Thevuthasan, Suntharampillai; Baer, Donald R.

    2002-08-01

    The interfacial chemistry and composition of Pt electrodes sputter deposited on bromine-etched CdZnTe surfaces was studied by XPS, SIMS, AES, NRA and RBS. The interfacial composition of a functioning and a non-functioning CdZnTe detector shows significant differences. The degree of cation out-diffusion into the Pt overlayer and the in-diffusion of Pt into the CdZnTe correlate with the degree of oxidation found at the metal-semiconductor interface. Practically all the oxide present at the interface was found to be TeO{sub 2}. The results suggest that the inter-diffusion of the atoms and associated charges contribute to stoichiometric variations at the metal-semiconductor interface and influence the electrical performance of the devices.

  5. Applying Semiconductor Technologies and Metrology Tools to Biomedical Research: Manipulation and Detection of Single Molecules

    NASA Astrophysics Data System (ADS)

    Berlin, Andrew A.; Sundararajan, Narayan; Koo, Tae-Woong

    2005-09-01

    Intel's Precision Biology research effort is working to combine Intel's expertise in nanotechnology with aspects of biology and medicine to create highly sensitive instrumentation for biomolecular analysis. The ability to manipulate, detect, and identify biological molecules at ultra-low concentrations is important for applications ranging from whole-genome DNA sequencing to protein-based early disease detection. In this paper we describe our work to develop a molecular labeling system based on Surface-Enhanced Raman Spectroscopy (SERS), to enable highly sensitive protein detection. We also present a set of microfluidic and spectroscopic techniques that our team has developed for transporting and identifying single molecules in solution.

  6. Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Xia, Liansheng; Chen, Yi; Liu, Yi; Yang, Chao; Ye, Mao; Deng, Jianjun

    2015-01-01

    The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

  7. Dye- and Semiconductor-Sensitized Nanoparticle Solar Cell Research at NREL

    SciTech Connect

    Frank, A. J.; Kopidakis, N.; Benkstein, K. D.; van de Lagemaat, J.; Neale, N. R.

    2005-01-01

    The major objective of this research program is to determine the operational characteristics key to efficient, low-cost, stable liquid-junction and solid-state solar cells based on sensitized nanoporous films (in collaboration with DOE's Office of Science Program). Toward this end, we are conducting experimental and theoretical studies to understand the unique physical and chemical factors governing cell performance. Current scientific issues addressed include the influence of film morphology, sensitizer, and electrolyte on the electron transport and recombination dynamics and on the light-harvesting, charge-injection, and charge-collection efficiencies. Recently, we investigated the relationship between (1) transport and recombination, (2) morphological factors of core-shell nanoparticle films and their PV properties, and (3) electron-electron interactions and their effect on the transport dynamics. In this paper, we discuss the connection between transport and recombination and its effect on cell performance.

  8. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  9. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  10. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. R.

    2012-10-01

    We present results of structural, electrical, and defect characterization of 4H-SiC epitaxial layers and bulk crystals and show performance of the radiation detectors fabricated from these materials. The crystal quality was evaluated by x-ray diffraction (XRD) rocking curve measurements, electron beam induced current (EBIC) imaging, and defect delineating etching in conjunction with optical microscopy and scanning electron microscopy (SEM). Studies of the electrically active intrinsic defects and impurities were conducted using thermally stimulated current (TSC) measurements in a wide temperature range of 94 - 750K. The results are correlated with the capability of bulk crystals and epitaxial layers for the detection of α-particles, low to high energy x-rays and gamma rays. High barrier rectifying Schottky diodes have been fabricated and tested. The epitaxial 4H-SiC radiation detectors exhibited low leakage current (< 1 nA) at ~ 200 V operating voltage up to 200 C. The soft x-ray responsivity measurements performed at the National Synchrotron Light Source (NSLS) at Brookhaven National Lab (BNL) showed significantly improved characteristics compared to commercially-available SiC UV photodiode detectors.

  11. The ADAQ framework: An integrated toolkit for data acquisition and analysis with real and simulated radiation detectors

    NASA Astrophysics Data System (ADS)

    Hartwig, Zachary S.

    2016-04-01

    The ADAQ framework is a collection of software tools that is designed to streamline the acquisition and analysis of radiation detector data produced in modern digital data acquisition (DAQ) systems and in Monte Carlo detector simulations. The purpose of the framework is to maximize user scientific productivity by minimizing the effort and expertise required to fully utilize radiation detectors in a variety of scientific and engineering disciplines. By using a single set of tools to span the real and simulation domains, the framework eliminates redundancy and provides an integrated workflow for high-fidelity comparison between experimental and simulated detector performance. Built on the ROOT data analysis framework, the core of the ADAQ framework is a set of C++ and Python libraries that enable high-level control of digital DAQ systems and detector simulations with data stored into standardized binary ROOT files for further analysis. Two graphical user interface programs utilize the libraries to create powerful tools: ADAQAcquisition handles control and readout of real-world DAQ systems and ADAQAnalysis provides data analysis and visualization methods for experimental and simulated data. At present, the ADAQ framework supports digital DAQ hardware from CAEN S.p.A. and detector simulations performed in Geant4; however, the modular design will facilitate future extension to other manufacturers and simulation platforms.

  12. Design of a synchrotron radiation detector for the test beam lines at the Superconducting Super Collider Laboratory

    SciTech Connect

    Hutton, R.D.

    1994-01-01

    As part of the particle- and momentum-tagging instrumentation required for the test beam lines of the Superconducting Super Collider (SSC), the synchrotron radiation detector (SRD) was designed to provide electron tagging at momentum above 75 GeV. In a parallel effort to the three test beam lines at the SSC, schedule demands required testing and calibration operations to be initiated at Fermilab. Synchrotron radiation detectors also were to be installed in the NM and MW beam lines at Femilab before the test beam lines at the SSC would become operational. The SRD is the last instrument in a series of three used in the SSC test beam fines. It follows a 20-m drift section of beam tube downstream of the last silicon strip detector. A bending dipole just in of the last silicon strip detector produces the synchrotron radiation that is detected in a 50-mm-square cross section NaI crystal. A secondary scintillator made of Bicron BC-400 plastic is used to discriminate whether it is synchrotron radiation or a stray particle that causes the triggering of the NaI crystal`s photo multiplier tube (PMT).

  13. The development of photoemission spectroscopy and its application to the study of semiconductor interfaces Observations on the interplay between basic and applied research (Welch Memorial Lecture)

    NASA Technical Reports Server (NTRS)

    Spicer, W. E.

    1985-01-01

    A sketch is given of the development of photoemission electron spectroscopy (PES) with emphasis on the author's own experience. Emphasis is placed: (1) on the period between 1958-1970; (2) on the various developments which were required for PES to emerge; and (3) on the strong interactions between applied/fundamental and knowledge/empirically based research. A more detailed discussion is given of the recent (1975-present) application of PES to study the interfaces of III-V semiconductors.

  14. Characteristics of a planar-type Cd0.9Zn0.1Te radiation detector grown by using the low-pressure bridgman method

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Kim, Han Soo; Kim, Young Soo; Ha, Jang Ho

    2014-04-01

    An indium-doped (7 ppm) Cd0.9Zn0.1Te single crystal for use in room-temperature radiation detectors has been grown using a low-pressure Bridgman (LPB) furnace at the Korea Atomic Research Institute. The single crystal has a (111) orientation and a high resistivity of ˜1 × 1012 Ω·cm. In addition, the mobility-lifetime products of the electrons and hole are 4.2 × 10-4 cm2/V and 5 × 10-5 cm2/V, respectively. These values are simply derived by using a Hecht and a neural equation and 5 MeV alpha particles emitted from an 241Am alpha source. To characterize the Cd0.9Zn0.1Te grown by using the LPB method, we fabricated planar detectors with volume of 10 × 10 × 2.5 mm3 from a 2-inch-diameter Cd0.9Zn0.1Te ingot.

  15. Silicon field-effect transistors as radiation detectors for the Sub-THz range

    SciTech Connect

    But, D. B. Golenkov, O. G.; Sakhno, N. V.; Sizov, F. F.; Korinets, S. V.; Gumenjuk-Sichevska, J. V.; Reva, V. P.; Bunchuk, S. G.

    2012-05-15

    The nonresonance response of silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) with a long channel (1-20 {mu}m) to radiation in the frequency range 43-135 GHz is studied. The transistors are fabricated by the standard CMOS technology with 1-{mu}m design rules. The volt-watt sensitivity and the noise equivalent power (NEP) for such detectors are estimated with the calculated effective area of the detecting element taken into account. It is shown that such transistors can operate at room temperature as broadband direct detectors of sub-THz radiation. In the 4-5 mm range of wavelengths, the volt-watt sensitivity can be as high as tens of kV/W and the NEP can amount to 10{sup -11} - 10{sup -12}W/{radical}Hz . The parameters of detectors under study can be improved by the optimization of planar antennas.

  16. Physical design and Monte Carlo simulations of a space radiation detector onboard the SJ-10 satellite

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Qing; Wang, Huan-Yu; Cui, Xing-Zhu; Peng, Wen-Xi; Fan, Rui-Rui; Liang, Xiao-Hua; Gao, Ming; Zhang, Yun-Long; Zhang, Cheng-Mo; Zhang, Jia-Yu; Yang, Jia-Wei; Wang, Jin-Zhou; Zhang, Fei; Dong, Yi-Fan; Guo, Dong-Ya; Zhou, Da-Wei

    2015-01-01

    A radiation gene box (RGB) onboard the SJ-10 satellite is a device carrying mice and drosophila cells to determine the biological effects of space radiation environment. The shielded fluxes of different radioactive sources were calculated and the linear energy transfers of γ-rays, electrons, protons and α-particles in the tissue were acquired using A-150 tissue-equivalent plastic. Then, a conceptual model of a space radiation instrument employing three semiconductor sub-detectors for deriving the charged and uncharged radiation environment of the RGB was designed. The energy depositions in the three sub-detectors were classified into 15 channels (bins) in an algorithm derived from the Monte Carlo method. The physical feasibility of the conceptual instrument was also verified by Monte Carlo simulations.

  17. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    NASA Technical Reports Server (NTRS)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  18. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

    DOEpatents

    Hansen, W.L.; Haller, E.E.

    1980-09-19

    Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

  19. X-RAY PHOTOEMISSION ANALYSIS OF PASSIVATED Cd(1-x)ZnxTe SURFACES FOR IMPROVED RADIATION DETECTORS

    SciTech Connect

    Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R; Payne, S

    2008-05-12

    Surface passivation of device-grade CdZnTe was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements after Br-MeOH (2% Br) and KOH/NH{sub 4}F/H{sub 2}O{sub 2} solutions were used to etch and oxidize the surface. High-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for radiation detector devices.

  20. Opto-electrical characterization and X-ray mapping of large-volume cadmium zinc telluride radiation detectors

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Yao, H.W.; Kim, K.; and James, R.B.

    2009-04-13

    Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detection capabilities and, therefore, attract extensive scientific and commercial interests. CZT crystals with volumes as large as hundreds of centimeters can be achieved today due to improvements in the crystal growth technology. However, the poor performance of large-volume CZT detectors is still a challenging problem affecting the commercialization of CZT detectors and imaging arrays. We have employed Pockels effect measurements and synchrotron X-ray mapping techniques to investigate the performance-limiting factors for large-volume CZT detectors. Experimental results with the above characterization methods reveal the non-uniform distribution of internal electric field of large-volume CZT detectors, which help us to better understand the responsible mechanism for the insufficient carrier collection in large-volume CZT detectors.

  1. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  2. Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

    NASA Astrophysics Data System (ADS)

    Prasad, D. N.; Ayyappan, R.; Kamble, L. P.; Singh, J. P.; Muralikrishna, L. V.; Alex, M.; Balagi, V.; Mukhopadhyay, P. K.

    2008-05-01

    Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ~1 × 10-5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mm×160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face & diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6×10-9 m bar ltr/sec in vacuum mode and 2×10-7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5×10-5 mbar, the new valve achieved vacuum 7.4×10-6mbar in the same time under the same conditions.

  3. Influence of solvothermal synthesis conditions in BiSI nanostructures for application in ionizing radiation detectors

    NASA Astrophysics Data System (ADS)

    Aguiar, I.; Mombrú, M.; Pérez Barthaburu, M.; Bentos Pereira, H.; Fornaro, L.

    2016-02-01

    BiSI belongs to the A V B VI C VII chalcohalides group of compounds. These compounds show several interesting properties such as ferroelectricity, piezoelectricity along the c axis, and photoconductivity. Moreover, BiSI is a potential semiconductor material for room-temperature gamma and x-ray detection, given its band gap of 1.57 eV and its high density, 6.41 g cm-3. In this work we present BiSI nanostructures synthesized by the solvothermal method with the intention of using them for ionizing radiation detection. The solvent was varied to study its influence in morphology, particle size and size distribution. Three different conditions were tested, using either water, monoethylene glycol and a mixture of both solvents. Nanostructures were characterized by XRD to determine the phase obtained and reaction completeness; TEM was used to observe nanostructures morphology, size, size distribution and crystallinity; and finally FT-IR diffuse reflectance was used to study monoethylene glycol presence in the samples. Nanorods in the range of 100-200 nm width were obtained in all samples, but round nanoparticles of around 10 nm in diameter were also detected in samples synthesized only with monoethylene glycol. Samples synthesized in monoethylene glycol were used to fabricate pellets to construct detectors. The detectors responded to ionizing radiation and a resistivity in the order of 1013 Ω cm was estimated. This work proposes, to our knowledge, the first study of BiSI for its application in ionizing radiation detection.

  4. Correction-less dosimetry of nonstandard photon fields: a new criterion to determine the usability of radiation detectors.

    PubMed

    Kamio, Y; Bouchard, H

    2014-09-01

    In the IAEA-AAPM dosimetry formalism, detector measurements in general nonstandard conditions are corrected using the factor k(f(clin),f(msr))(Q(clin),Q(msr)). This factor needs to be evaluated on a case-by-case basis which is difficult to accomplish in practice. The present paper aims to provide a method that allows neglecting correction factors for small and composite IMRT fields by first determining a radiation detector's usability in these fields. Detailed models of nine radiation detectors are built: four ionization chambers (NE2571, A12, A1SL, A14), three small field detectors (PTW31018 microLion, PTW60003 natural diamond, PTW60012 unshielded diode) and two near water-equivalent detectors (alanine, W1 scintillating fiber). Using the egs_chamber Monte Carlo code, dose response functions at 6 MV and 25 MV are sampled for each detector and their corresponding volume of water. These functions are then used with a newly derived criterion to evaluate an upper bound ξ(f(ns),f(msr))(Q(ns),Q(msr)) on the variable ε(f(ns),f(msr))(Q(ns),Q(msr)) if no field collimation/modulation occurs over a given perturbation zone. The variable ε(f(ns),f(msr))(Q(ns),Q(msr)) is defined as the absolute value of the relative deviation from unity of a nonstandard field quality correction factor k(f(ns),f(msr))(Q(ns),Q(msr)). Using the same criterion, perturbation zones are evaluated by finding the smallest field size allowed for correction-less dosimetry with a given tolerance ξ(f(ns),f(msr))(Q(ns),Q(msr)). For composite fields, the sensitivity of detectors to the non-uniformity of virtual symmetric collapsed beams over regions of interest specified by the criterion is studied to estimate an upper bound ξ ̃(f(ns),f(ref))(Q(ns),Q) on ε(f(ns),f(ref))(Q(ns),Q) for a given beam flatness. Finally, a newly defined perturbation function is used to minimize the perturbations of the microLion chamber through density compensation. The theoretical criterion shows good agreement with full

  5. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  6. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  7. Development of a high-resolution room-temperature compressed-xenon cylindrical ionization-chamber gamma radiation detector

    NASA Astrophysics Data System (ADS)

    Tepper, Gary C.; Losee, Jon R.; Palmer, Robert L.

    1998-07-01

    Highly compressed and purified xenon is emerging as an important detection medium for high resolution, room temperature gamma radiation spectroscopy. Detectors based on compressed xenon offer a unique combination of thermal stability, high energy resolution and large volume. Furthermore, fluid based detectors are not susceptible to radiation damage, and can be constructed in a variety of geometries. However, some important factors have delayed the development of practical xenon detectors for widespread use. These factors include the relatively high operational pressures and voltages and the need to maintain extremely high xenon purity. We have recently developed a 0.7 liter gridded ionization chamber xenon gamma radiation detector in a cylindrical geometry. The detector operates at room temperature and provides an intrinsic energy resolution of 1.8% at 662 keV which is five times greater than scintillation based spectrometers. The detector design and performance variables are discussed in comparison to a previous detector constructed in a planar geometry. Our results indicate that practical xenon detectors can now be developed for a wide variety of applications.

  8. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

    SciTech Connect

    Ralph B. James

    2000-01-07

    Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were performed for {sup 137}Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumes were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices.

  9. An evaluation of the Kearny Fallout Meter (KFM), a radiation detector constructed from commonly available household materials.

    PubMed

    McDonald, J T; West, W G; Kearfott, K J

    2004-11-01

    A radiation detector constructed of common household materials was developed at Oak Ridge National Laboratory (ORNL) by Cresson H. Kearny and has been referred to as the Kearny Fallout Meter (KFM). Developed during the height of the Cold War, the KFM was intended to place a radiation meter capable of measuring fallout from nuclear weapons in the hands of every U.S. citizen. Instructions for the construction of the meter, as well as information about radiation health effects, were developed in the form of multi-page newspaper insert. Subsequently, the sensitivity of the meter was refined by a high school teacher, Dr. Paul S. Lombardi, for use in demonstrations about radiation. The meter is currently being marketed for survivalists in light of potential radiation terrorist concerns. The KFM and Lombardi's variation of it are constructed and evaluated for this work. Calibrated tests of the response and variations in response are reported. A critique of the multi-page manual is made. In addition, the suitability of using such a detector, in terms of actual ease of construction and practical sensitivity, is discussed for its use in demonstrations and introductory classes on nuclear topics. PMID:15551780

  10. Improved Growth Methods for LaBr3 Scintillation Radiation Detectors

    SciTech Connect

    McGregor, Douglas S

    2011-05-01

    The objective is to develop advanced materials for deployment as high-resolution gamma ray detectors. Both LaBr3 and CeBr3 are advanced scintillation materials, and will be studied in this research. Prototype devices, in collaboration Sandia National Laboratories, will be demonstrated along with recommendations for mass production and deployment. It is anticipated that improved methods of crystal growth will yield larger single crystals of LaBr3 for deployable room-temperature operated gamma radiation spectrometers. The growth methods will be characterized. The LaBr3 and CeBr3 scintillation crystals will be characterized for light yield, spectral resolution, and for hardness.