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Sample records for si rezultatele imediate

  1. Topoisomerase I-mediated DNA damage.

    PubMed

    Pourquier, P; Pommier, Y

    2001-01-01

    Topoisomerase I is a ubiquitous and essential enzyme in multicellular organisms. It is involved in multiple DNA transactions including DNA replication, transcription, chromosome condensation and decondensation, and probably DNA recombination. Besides its activity of DNA relaxation necessary to eliminate torsional stresses associated with these processes, topoisomerase I may have other functions related to its interaction with other cellular proteins. Topoisomerase I is the target of the novel anticancer drugs, the camptothecins. Recently a broad range of physiological and environmentally-induced DNA modifications have also been shown to poison topoisomerases. This review summarizes the various factors that enhance or suppress top1 cleavage complexes and discusses the significance of such effects. We also review the different mechanisms that have been proposed for the repair of topoisomerase I-mediated DNA lesions. PMID:11034544

  2. Topoisomerase I-Mediated DNA Cleavage Induced by the Minor Groove-Directed Binding of Bibenzimidazoles to a Distal Site

    PubMed Central

    Khan, Qasim A.; Pilch, Daniel S.

    2007-01-01

    Summary Many agents (e.g., camptothecins, indolocarbazoles, indenoisoquinolines, and dibenzonaphthyridines) stimulate topoisomerase I-mediated DNA cleavage (a behavior termed topoisomerase I poisoning) by interacting with both the DNA and the enzyme at the site of cleavage (typically by intercalation between the −1 and +1 base pairs). The bibenzimidazoles, which include Hoechst 33258 and 33342, are a family of DNA minor groove-directed agents that also stimulate topoisomerase I-mediated DNA cleavage. However, the molecular mechanism by which these ligands poison TOP1 is poorly understood. Toward this goal, we have used a combination of mutational, footprinting, and DNA binding affinity analyses to define the DNA binding site for Hoechst 33258 and a related derivative that results in optimal induction of TOP1-mediated DNA cleavage. We show that this DNA binding site is located downstream from the site of DNA cleavage, encompassing the base pairs from position +4 to +8. The distal nature of this binding site relative to the site of DNA cleavage suggests that minor groove-directed agents like the bibenzimidazoles poison TOP1 via a mechanism distinct from compounds like the camptothecins, which interact at the site of cleavage. PMID:17095016

  3. Si

    NASA Astrophysics Data System (ADS)

    Fiameni, S.; Famengo, A.; Agresti, F.; Boldrini, S.; Battiston, S.; Saleemi, M.; Johnsson, M.; Toprak, M. S.; Fabrizio, M.

    2014-06-01

    Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion in the middle-high temperature range. The detrimental effect of the presence of MgO on the TE properties of Mg2Si based materials is widely known. For this reason, the conditions used for synthesis and sintering were optimized to limit oxygen contamination. The effect of Bi doping on the TE performance of dense Mg2Si materials was also investigated. Synthesis was performed by ball milling in an inert atmosphere starting from commercial Mg2Si powder and Bi powder. The samples were consolidated, by spark plasma sintering, to a density >95%. The morphology, and the composition and crystal structure of samples were characterized by field-emission scanning electronic microscopy and x-ray diffraction, respectively. Moreover, determination of Seebeck coefficients and measurement of electrical and thermal conductivity were performed for all the samples. Mg2Si with 0.1 mol% Bi doping had a ZT value of 0.81, indicative of the potential of this method for fabrication of n-type bulk material with good TE performance.

  4. An Alternative Method to Facilitate cDNA Cloning for Expression Studies in Mammalian Cells by Introducing Positive Blue White Selection in Vaccinia Topoisomerase I-Mediated Recombination.

    PubMed

    Udo, Hiroshi

    2015-01-01

    One of the most basic techniques in biomedical research is cDNA cloning for expression studies in mammalian cells. Vaccinia topoisomerase I-mediated cloning (TOPO cloning by Invitrogen) allows fast and efficient recombination of PCR-amplified DNAs. Among TOPO vectors, a pcDNA3.1 directional cloning vector is particularly convenient, since it can be used for expression analysis immediately after cloning. However, I found that the cloning efficiency was reduced when RT-PCR products were used as inserts (about one-quarter). Since TOPO vectors accept any PCR products, contaminating fragments in the insert DNA create negative clones. Therefore, I designed a new mammalian expression vector enabling positive blue white selection in Vaccinia topoisomerase I-mediated cloning. The method utilized a short nontoxic LacZα peptide as a linker for GFP fusion. When cDNAs were properly inserted into the vector, minimal expression of the fusion proteins in E. coli (harboring lacZΔM15) resulted in formation of blue colonies on X-gal plates. This method improved both cloning efficiency (75%) and directional cloning (99%) by distinguishing some of the negative clones having non-cording sequences, since these inserts often disturbed translation of lacZα. Recombinant plasmids were directly applied to expression studies using GFP as a reporter. Utilization of the P2A peptide allowed for separate expression of GFP. In addition, the preparation of Vaccinia topoisomerase I-linked vectors was streamlined, which consisted of successive enzymatic reactions with a single precipitation step, completing in 3 hr. The arrangement of unique restriction sites enabled further modification of vector components for specific applications. This system provides an alternative method for cDNA cloning and expression in mammalian cells. PMID:26422141

  5. The novel complement inhibitor human CUB and Sushi multiple domains 1 (CSMD1) protein promotes factor I-mediated degradation of C4b and C3b and inhibits the membrane attack complex assembly.

    PubMed

    Escudero-Esparza, Astrid; Kalchishkova, Nikolina; Kurbasic, Emila; Jiang, Wen G; Blom, Anna M

    2013-12-01

    CUB and Sushi multiple domains 1 (CSMD1) is a transmembrane protein containing 15 consecutive complement control protein (CCP) domains, which are characteristic for complement inhibitors. We expressed a membrane-bound fragment of human CSMD1 composed of the 15 C-terminal CCP domains and demonstrated that it inhibits deposition of C3b by the classical pathway on the surface of Chinese hamster ovary cells by 70% at 6% serum and of C9 (component of membrane attack complex) by 90% at 1.25% serum. Furthermore, this fragment of CSMD1 served as a cofactor to factor I-mediated degradation of C3b. In all functional assays performed, well-characterized complement inhibitors were used as positive controls, whereas Coxsackie adenovirus receptor, a protein with no effect on complement, was a negative control. Moreover, attenuation of expression in human T47 breast cancer cells that express endogenous CSMD1 significantly increased C3b deposition on these cells by 45% at 8% serum compared with that for the controls. Furthermore, by expressing a soluble 17-21 CCP fragment of CSMD1, we found that CSMD1 inhibits complement by promoting factor I-mediated C4b/C3b degradation and inhibition of MAC assembly at the level of C7. Our results revealed a novel complement inhibitor for the classical and lectin pathways. PMID:23964079

  6. SI Notes.

    ERIC Educational Resources Information Center

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  7. The Basic SI Model

    ERIC Educational Resources Information Center

    Hurley, Maureen; Jacobs, Glen; Gilbert, Melinda

    2006-01-01

    A general overview of the SI model is provided, including the SI philosophy, essential components of the program, program structures, key roles, outcomes, and evaluation. A review of what we have learned about the importance of planning SI sessions, providing ongoing training for leaders, conducting regular SI program assessments, and implementing…

  8. Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses

    NASA Technical Reports Server (NTRS)

    Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2.

  9. Thin-film formation of Si clathrates on Si wafers

    NASA Astrophysics Data System (ADS)

    Ohashi, Fumitaka; Iwai, Yoshiki; Noguchi, Akihiro; Sugiyama, Tomoya; Hattori, Masashi; Ogura, Takuya; Himeno, Roto; Kume, Tetsuji; Ban, Takayuki; Nonomura, Shuichi

    2014-04-01

    In this study, we prepared Si clathrate films (Na8Si46 and NaxSi136) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10-2 Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na8Si46 and NaxSi136 using the appropriate crystalline orientation of Si substrates.

  10. Si surface preparation with Si beam irradiation on the growth on III-V on Si

    SciTech Connect

    Kawanami, H.; Baskar, K.; Sakata, I.; Sekigawa, T.

    1998-12-31

    The preliminary results of the effects of the Si beam irradiation for the Si surface preparation on the growth of GaAs on Si by MBE are reported. The effects are combined with thermal cyclic anneal (TCA). A slight improvement in the crystalline quality is observed on the photoluminescence spectra of the films grown with Si irradiation, In experimental conditions, Si irradiation during the Si surface preparation has not indicated large effects on the FWHM of XRD. It is also indicated that initial substrate surface treatment affects the quality of thicker film through TCA treatment. Higher substrate temperature during Si beam irradiation is expected to indicate positive Si beam irradiation effects.

  11. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  12. Mechanical instabilities and piezoresistivity of SiGe/Si microtubes

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Dong, Lixin; Nelson, Bradley J.

    2007-10-01

    Mechanical instabilities and piezoresistivity of individual rolled-up SiGe/Si microtubes are investigated using nanorobotic manipulation. By applying this technique, as-fabricated one-end-fixed SiGe/Si microtubes can be cut and picked up from the substrate to examine their mechanical and electromechanical properties in a free space. Individual SiGe/Si microtubes show typical Euler buckling when the uniaxial compressive load is larger than a critical value. Moreover, experiments show that 1.6-turn rolled-up SiGe/Si microtubes have similar mechanical stability to ideal seamless tubes though the former ones have a spiral-like cross sectional area instead of an ideal ring. According to the measured I-V properties, SiGe/Si microtubes show positive piezoresistivity under compressive loads.

  13. -SiC Composites

    NASA Astrophysics Data System (ADS)

    Chakraborty, Shirshendu; Debnath, Debashish; Mallick, Azizur Rahaman; Das, Probal Kumar

    2014-12-01

    ZrB2-SiC composites were hot pressed at 2473 K (2200 °C) with graded amounts (5 to 20 wt pct) of SiC and the effect of the SiC addition on mechanical properties like hardness, fracture toughness, scratch and wear resistances, and thermal conductivity were studied. Addition of submicron-sized SiC particles in ZrB2 matrices enhanced mechanical properties like hardness (15.6 to 19.1 GPa at 1 kgf), fracture toughness (2 to 3.6 MPa(m)1/2) by second phase dispersion toughening mechanism, and also improved scratch and wear resistances. Thermal conductivity of ZrB2-SiC (5 wt pct) composite was higher [121 to 93 W/m K from 373 K to 1273 K (100 °C to 1000 °C)] and decreased slowly upto 1273 K (1000 °C) in comparison to monolithic ZrB2 providing better resistance to thermal fluctuation of the composite and improved service life in UHTC applications. At higher loading of SiC (15 wt pct and above), increased thermal barrier at the grain boundaries probably reduced the thermal conductivity of the composite.

  14. Mo/Si and MoSi2/Si nanostructures for multilayer Laue lens

    NASA Astrophysics Data System (ADS)

    Takenaka, H.; Ichimaru, S.; Ohchi, T.; Koyama, T.; Tsuji, T.; Takano, H.; Kagoshima, Y.

    2009-09-01

    To develop a multilayer Laue lens (MLL), we fabricated depth-graded Mo/Si and MoSi2/Si multilayers with each boundary according to the Fresnel zone configuration. The multilayers were deposited by magnetron sputtering. From the result of SEM image analysis of the multilayer cross sections, MoSi2/Si multilayer had smaller layer-thickness errors than Mo/Si multilayer. In addition, from the result of the focusing test by using 20-keV X-rays, the measured beam size of MoSi2/Si MLL had a small blurring from the diffraction limited beam size. These results suggest that MoSi2/Si multilayer is better suited than Mo/Si multilayer for use as an MLL in hard x-ray nanofocusing.

  15. X-Ray And Polarized Neutron Reflectometry: Characterization Of Si/Co/Si And Si/Ni/Si Systems

    SciTech Connect

    Bhattacharya, Debarati; Basu, Saibal; Poswal, A. K.; Roy, S.; Dev, B. N.

    2010-12-01

    Technologically important metal silicides formed through interdiffusion in metal/Si systems has been probed using two complementary techniques viz. x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Both structural and magnetic characterization with good depth resolution has been achieved in these systems. We have studied two systems Si/Co/Si and Si/Ni/Si which relate to important applications in ferromagnetic/ non-magnetic semiconductor layered structures for memory devices.

  16. Kapitza resistance of Si/SiO2 interface

    SciTech Connect

    Bowen Deng; Aleksandr Chenatynskiy; Marat Khafizov; David Hurley; Simon Phillpot

    2014-02-01

    A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

  17. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  18. SI (Metric) handbook

    NASA Technical Reports Server (NTRS)

    Artusa, Elisa A.

    1994-01-01

    This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

  19. Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Stesmans, A.; Zacharias, M.

    2008-11-01

    An extensive electron spin resonance (ESR) analysis has been carried out on structures comprised of Si nanoparticles (˜2 nm across) embedded in a regular pattern in an amorphous SiO2 matrix, fabricated by the SiO/SiO2 superlattice approach, with the intent to reveal and quantify occurring paramagnetic defects. The as-grown state is found to exhibit only a Si dangling bond (DB) signal, which through combination of first and second harmonic X-, K-, and Q-band observations in combination with computer spectra simulation, could be conclusively disentangled as solely comprised of overlapping powder pattern spectra of Pb(0) and Pb1 defects, the archetypal intrinsic defects of the Si/SiO2 interface, with no evidence for a D line (Si DBs in disordered Si). This indicates a full crystalline system of randomly oriented Si nanocrystals (NCs). The Pb(0)/Pb1 defect system, pertaining to the NC-Si/SiO2 interfaces, is found to be both qualitatively and quantitatively much alike that of standard (high-quality) thermal Si/SiO2. The system is inherent, remaining unaffected by subsequent UV/vacuum UV irradiations. Relying on the known properties of Pb-type defects in standard microscopic Si/SiO2, the data would comply with Si nanocrystallites, in average, predominantly bordered by (111) and (100) facets, perhaps with morphology, schematically, of [100] truncated (111) octahedrons. Based on independent NC particles counting, there appears a Pb-type center at ˜71% of the Si NCs indicating the latter to be comprised of two subsystems-with or without an incorporated strain relaxing interface defect-which in that case will exhibit drastically different defect-sensitive properties, such as, e.g., photoluminescence (PL). Upon additional optical irradiation, two more defects appear, i.e., the SiO2-associated Eγ' and EX centers, where the observed density of the former, taken as criterion, indicates the SiO2 matrix to be of standard thermal oxide quality. Thus, the properties of the

  20. SI: The Stellar Imager

    NASA Technical Reports Server (NTRS)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  1. Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures.

    PubMed

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Meduňa, Mojmír; Barget, Michael; Jung, Arik; Kreiliger, Thomas; Isella, Giovanni; Erni, Rolf; Pezzoli, Fabio; Bonera, Emiliano; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; von Känel, Hans

    2016-02-01

    Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001). PMID:26829168

  2. Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Hebsur, Mohan G.

    2000-01-01

    Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

  3. Reliability implications of defects in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.

    1994-08-01

    High-temperature post-oxidation annealing of poly-Si/SiO{sub 2}/Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO{sub 2} interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO{sub 2} network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO{sub 2} and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO{sub 2}/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.

  4. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; Gunapala, S. D.

    1994-01-01

    Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

  5. Band offsets in c-Si/Si-XII heterojunctions

    NASA Astrophysics Data System (ADS)

    Mustafa, Jamal I.; Malone, Brad D.; Cohen, Marvin L.; Louie, Steven G.

    2014-08-01

    Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I-V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be ΔEv=0.3 eV and ΔEc=0.5 eV for the valence bands and conduction bands, respectively.

  6. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Devine, R.A.B.; Mathiot, D.; Warren, W.L.; Fleetwood, D.M.

    1993-12-31

    Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

  7. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    NASA Astrophysics Data System (ADS)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  8. Brazing SiC/SiC Composites to Metals

    NASA Technical Reports Server (NTRS)

    Steffier, Wayne S.

    2004-01-01

    Experiments have shown that active brazing alloys (ABAs) can be used to join SiC/SiC composite materials to metals, with bond strengths sufficient for some structural applications. The SiC/SiC composite coupons used in the experiments were made from polymerbased SiC fiber preforms that were chemical-vapor-infiltrated with SiC to form SiC matrices. Some of the metal coupons used in the experiments were made from 304 stainless steel; others were made from oxygen-free, high-conductivity copper. Three ABAs were chosen for the experiments: two were chosen randomly from among a number of ABAs that were on hand at the time; the third ABA was chosen because its titanium content (1.25 percent) is less than those of the other two ABAs (1.75 and 4.5 percent, respectively) and it was desired to evaluate the effect of reducing the titanium content, as described below. The characteristics of ABAs that are considered to be beneficial for the purpose of joining SiC/SiC to metal include wettability, reactivity, and adhesion to SiC-based ceramics. Prior to further development, it was verified that the three chosen ABAs have these characteristics. For each ABA, suitable vacuum brazing process conditions were established empirically by producing a series of (SiC/SiC)/ABA wetting samples. These samples were then sectioned and subjected to scanning electron microscopy (SEM) and energy-dispersive x-ray spectrometry (EDS) for analysis of their microstructures and compositions. Specimens for destructive mechanical tests were fabricated by brazing of lap joints between SiC/SiC coupons 1/8-in. (.3.2- mm) thick and, variously, stainless steel or copper tabs. The results of destructive mechanical tests and the SEM/EDS analysis were used to guide the development of a viable method of brazing the affected materials.

  9. Line broadening in the Si I, Si II, Si III, and Si IV spectra in the helium plasma

    NASA Astrophysics Data System (ADS)

    Bukvić, S.; Djeniže, S.; Srećković, A.

    2009-12-01

    Context: The neutral and ionized silicon spectral line shapes have been investigated in the laboratory helium plasma at electron densities ranging between 3.7× 1022 m-3 and 1.1× 1023 m-3 and electron temperatures between 12 500 K and 19 000 K, both interesting for astrophysics. Aims: The aim of this work is to present experimental Stark FWHM (full-width at half of the maximum line intensity, W) for number of spectral lines from neutral (Si I), singly (Si II), doubly (Si III), and triply (Si IV) ionized silicon spectra emitted by the pulsed helium discharge, which is optically thin at the wavelengths of the investigated ionic silicon lines. A specific method for estimating self-absorbtion is presented in detail. For investigated Si I spectral lines, applying the proposed method, an optical depth of less than 0.38 is found. Appropriate corrections of the Si I Stark widths were made. The Stark widths of different ionic species, presented in this paper, are measured for the first time in the essentially same laboratory plasma. Methods: The silicon atoms were evaporated from the walls of the specially designed pyrex discharge tube in the pulsed helium discharge at a pressure of 665 Pa in a flowing regime. The Si I, Si II, Si III, and Si IV spectral line profiles were recorded using the McPherson model 209 spectrograph and the Andor ICCD camera as the detection system. Results: The Stark FWHMs of 13 Si I, 15 Si II, 28 Si III, and 9 Si IV spectral lines were measured in the wavelength interval between 206 nm and 640 nm. Five Si I, four Si II, eleven Si III, and one Si IV W values from the above set not had measured or calculated. Our W values are compared with the existing theoretical and experimental data. Conclusions: At the mentioned plasma parameters tolerable agreement was found (within the accuracy of the experiment and uncertainties of the theoretical approaches used) between measured and calculated Stark FWHM values. We recommend the Stark FWHMs of the intense

  10. Synthesis of Si nanopyramids at SiO{sub x}/Si interface for enhancing electroluminescence of Si-rich SiO{sub x}

    SciTech Connect

    Lin, G.-R.; Lin, C.-K.; Chou, L.-J.; Chueh, Y.-L.

    2006-08-28

    Enhanced electroluminescence (EL) of ITO/SiO{sub x}/Si-nanopyramid/p-Si/Al diode is investigated. By using low-power plasma enhanced chemical vapor deposition at high substrate temperature, anomalous (100)-oriented Si nanopyramids with a surface density of 1.6x10{sup 10} cm{sup -2} are synthesized at SiO{sub x}/Si interface prior to grow Si-rich SiO{sub x} film. Si nanopyramids greatly improve Fowler-Nordheim tunneling based carrier transport and benefit from less damaged oxide structure at lower biases. The turn-on voltage and threshold current density of the diode are reduced to 50 V and 0.2 mA/cm{sup 2}, respectively. Defect-related blue-green EL are suppressed to enhance stable near-infrared EL at 30 nW with a lifetime >10 h.

  11. Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces

    NASA Astrophysics Data System (ADS)

    Kageshima, Hiroyuki; Uematsu, Masahi; Akagi, Kazuto; Tsuneyuki, Shinji; Akiyama, Toru; Shiraishi, Kenji

    2004-12-01

    The excess Si emitted from the Si-oxide/Si interface is studied using the first-principles calculations. It is shown that the excess Si can have many (meta-) stable positions around the interface. In addition, some positions in the oxide do not have any dangling bonds or floating bonds in contrast to those in the bulk crystalline Si. The results indicate that the emitted Si can be located in the oxide layer but they do not necessarily cause charge traps in the oxide. The emitted Si atoms are thought to just be oxidized and absorbed into the oxide while a portion of them cause the E' centers, the Pb centers or charge traps.

  12. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

    SciTech Connect

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.; Myers, A. F.

    2014-01-06

    This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy, we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300 °C leads to a planar, epitaxial Si cap, but with small crystallographic rotations in the cap above each quantum dot. At 400 °C growth temperature, Si exhibits reduced sticking to the SiC, leading to a non-planar cap. However, a two-step process, with thin layer grown at 250 °C followed by growth at 500 °C, leads to a planar cap with a much-reduced density of defects.

  13. Synthesis and characterization of laminated Si/SiC composites

    PubMed Central

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  14. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  15. Fabrication of lightweight Si/SiC LIDAR mirrors

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S.; Taylor, Raymond L.

    1991-01-01

    A new, chemical vapor deposition (CVD) process was developed for fabricating lightweight, polycrystalline silicon/silicon-carbide (Si/SiC) mirrors. The process involves three CVD steps: (1) to produce the mirror faceplate; (2) to form the lightweight backstructure, which is deposited integral to the faceplate; and (3) to deposit a layer of optical-grade material, e.g., Si, onto the front surface of the faceplate. The mirror figure and finish are fabricated into the faceplate.

  16. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.; Houghton, D.

    1997-06-01

    The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ˜104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

  17. Spin splitting in SiGe/Si heterostructures

    NASA Astrophysics Data System (ADS)

    Nestoklon, M. O.; Golub, L. E.; Ivchenko, E. L.

    2007-04-01

    Spin and valley-orbit splittings are calculated in symmetric SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number of Si atomic planes is demonstrated. The spin splitting oscillates with QW width and these oscillations are related to the inter-valley reflection of an electron wave from the interfaces. It is shown that the splittings under study can efficiently be described by an extended envelope-function approach taking into account the spin- and valley-dependent interface mixing.

  18. SiGe/Si Monolithically Integrated Amplifier Circuits

    NASA Technical Reports Server (NTRS)

    Katehi, Linda P. B.; Bhattacharya, Pallab

    1998-01-01

    With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

  19. Inherent paramagnetic defects in layered Si/SiO{sub 2} superstructures with Si nanocrystals

    SciTech Connect

    Jivanescu, M.; Stesmans, A.; Zacharias, M.

    2008-11-15

    An extensive electron spin resonance (ESR) analysis has been carried out on structures comprised of Si nanoparticles ({approx}2 nm across) embedded in a regular pattern in an amorphous SiO{sub 2} matrix, fabricated by the SiO/SiO{sub 2} superlattice approach, with the intent to reveal and quantify occurring paramagnetic defects. The as-grown state is found to exhibit only a Si dangling bond (DB) signal, which through combination of first and second harmonic X-, K-, and Q-band observations in combination with computer spectra simulation, could be conclusively disentangled as solely comprised of overlapping powder pattern spectra of P{sub b(0)} and P{sub b1} defects, the archetypal intrinsic defects of the Si/SiO{sub 2} interface, with no evidence for a D line (Si DBs in disordered Si). This indicates a full crystalline system of randomly oriented Si nanocrystals (NCs). The P{sub b(0)}/P{sub b1} defect system, pertaining to the NC-Si/SiO{sub 2} interfaces, is found to be both qualitatively and quantitatively much alike that of standard (high-quality) thermal Si/SiO{sub 2}. The system is inherent, remaining unaffected by subsequent UV/vacuum UV irradiations. Relying on the known properties of P{sub b}-type defects in standard microscopic Si/SiO{sub 2}, the data would comply with Si nanocrystallites, in average, predominantly bordered by (111) and (100) facets, perhaps with morphology, schematically, of [100] truncated (111) octahedrons. Based on independent NC particles counting, there appears a P{sub b}-type center at {approx}71% of the Si NCs indicating the latter to be comprised of two subsystems-with or without an incorporated strain relaxing interface defect-which in that case will exhibit drastically different defect-sensitive properties, such as, e.g., photoluminescence (PL). Upon additional optical irradiation, two more defects appear, i.e., the SiO{sub 2}-associated E{sub {gamma}}{sup '} and EX centers, where the observed density of the former, taken as

  20. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  1. Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters

    PubMed Central

    2013-01-01

    Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiNx films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E04 while deteriorating the electrical conductivity of the Si-NCs/SiNx film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiNx film as a mixture of a high-transparency SiNx phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc-Si heterojunction solar cell. PMID:24188725

  2. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  3. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  4. SI and Non-SI Units of Concentration: A Truce?

    ERIC Educational Resources Information Center

    Rich, Ronald L.

    1986-01-01

    Questions the current usage of the International System of Units (called SI units) in representing chemical notation and terminology. Suggests several additions to the system that relate to concentrations. Outlines new symbols for distinguishing between "concentration" and "molality." Includes tables to illustrate the proposed SI units. (TW)

  5. XPS Study of SiO2 and the Si/SiO2 Interface

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

    1982-01-01

    X-ray photoelectron spectroscopy (XPS) is analytical technique for understanding electronic structure of atoms close to surface in solids, in preference to bulk structure of material. Study found evidence for core-level chemical shifts arising from changes in local structural environment in amorphous SiO2 and at Si/SiO2 interface. Observed XPS spectra may be understood as sequential convolution of several functions, each with well-defined physical interpretation.

  6. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)

    NASA Astrophysics Data System (ADS)

    Rana, Tawhid; Chandrashekhar, M. V. S.; Daniels, Kevin; Sudarshan, Tangali

    2016-04-01

    Tetrafluorosilane (SiF4 or TFS), a novel precursor gas, has been demonstrated to perform three primary operations of silicon carbide-related processing: SiC etching, SiC epitaxial growth and graphene epitaxial growth. TFS etches SiC substrate vigorously in a H2 ambient by efficient Si removal from the surface, where SiC etch rate is a function of TFS gas concentration. In this SiC etching process, Si is removed by TFS and C is removed by H2. When propane is added to a H2 and TFS gas mixture, etching is halted and high-quality SiC epitaxy takes place in a Si droplet-free condition. TFS's ability to remove Si can also be exploited to grow epitaxial graphene in a controllable manner in an inert (Ar) ambient. Here, TFS enhances graphene growth by selective etching of Si from the SiC surface.

  7. MoSi2-Base Composites

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G.

    2003-01-01

    Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.

  8. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Hecht, M. H.; Grunthaner, F. J.; Johnson, N. M.

    1987-01-01

    X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

  9. SI: Prognosis for the Future.

    ERIC Educational Resources Information Center

    Goldman, David T.

    1981-01-01

    Presents a survey of the International System of Units, usually denoted by its French abbreviation, SI (Systeme International), how it came about, and how it is likely to develop in the future. Describes SI units (base, derived, and supplementary) and new definitions for base units. (Author/SK)

  10. Using SI Units in Mechanics.

    ERIC Educational Resources Information Center

    Meriam, J. L.

    This paper provides an historical account of the development of the International System of Units (SI), a complete listing of these units, and rules concerning their use and proper abbreviation. Ambiguities concerning the use of the system are explained. Appendices contain conversion factors for U.S. - British to SI units along with several…

  11. Measurements, Standards, and the SI.

    ERIC Educational Resources Information Center

    Journal of Chemical Education, 1983

    1983-01-01

    Highlights six papers presented at the Seventh Biennial Conference on Chemical Education (Stillwater, Oklahoma 1982). Topics addressed included history, status, and future of SI units, algebra of SI units, periodic table, new standard-state pressure unit, and suggested new names for mole concept ("numerity" and "chemical amount"). (JN)

  12. Properties of SiC-SiC composites produced using CVR converted graphite cloth to SiC cloth

    SciTech Connect

    Kowbel, W.; Kyriacou, C.; Gao, F.; Bruce, C.A.; Withers, J.C.

    1995-10-01

    Nicalon fiber is the primary reinforcement in SiC-SiC composites currently produced by a variety of techniques including CVI and polymer infiltration. Low strength retention at high temperatures of the Nicalon fibers limits the choice of manufacturing processes which can be employed to produce low cost SiC-SiC composites. MER has developed a new SiC reinforcement based upon a conversion of low cost carbon fabric to SiC via a Chemical Vapor Reaction (CVR) process. This new SiC filaments exhibit an excellent creep resistance at temperatures up to 1,600 C. Several SiC-SiC composites were fabricated using graphite fabric converted to SiC fabric utilizing the CVR process combined with a slurry infiltration and CVI densification. A correlation between processing conditions, microstructure and properties of the SiC-SiC composites are discussed in detail.

  13. Hermetic SiC-SiC composite tubes

    SciTech Connect

    Kowbel, W.; Liu, Y.; Bruce, C.; Withers, J.C.; Kolaya, L.E.; Lewis, N.

    1998-12-31

    SiC-SiC composites have good potential for structural applications but are limited by expensive forming techniques. A high purity {beta}-SiC fiber produced by MER, and a polymer derived SiC matrix were used to fabricate small diameter hermetic SiC-SiC tubes. The process was optimized to prevent the formation of a brittle structure while rapidly forming a dense matrix. This tube was made hermetic by first coating the surface of the tube with a silicon carbide particle filled polymer slurry, followed by a Chemical Vapor Infiltration/Deposition (CVI/CVD) SiC deposition which was performed to close any residual porosity on the composite tube surface. X-ray diffraction and Transmission Electron Microscopy (TEM) examination was performed to determine the fiber and matrix structures. These tubes were found to be impermeable to helium with leak rates below 10{sup {minus}9} cc/sec as determined by testing similar to MIL-STD-883D, method 1014.10. This high level of impermeability was sustained following thermal cycling between room temperature and 1,520 C.

  14. Low loss Si(3)N(4)-SiO(2) optical waveguides on Si.

    PubMed

    Henry, C H; Kazarinov, R F; Lee, H J; Orlowsky, K J; Katz, L E

    1987-07-01

    We have developed an optical integrated circuit waveguide technology based on conventional Si processing. We demonstrate waveguide losses of <0.3 dB/cm in the 1.3-1.6-microm wavelength range. We use a high refractive-index core of Si(3)N(4) surrounded by SiO(2) cladding layers, which provides a highly confined optical mode adequate for butt coupling to channel substrate buried heterostructure lasers. We report the first IR transmission experiments in these waveguides and find two absorption peaks associated with H in SiO(2) and Si(3)N(4) layers at 1.40 and 1.52 microm, respectively. The peak absorptions are 2.2 and 1.2 dB/cm, respectively, and these peaks can be largely removed by annealing at 1100-1200 degrees C. PMID:20489931

  15. Low dose irradiation performance of SiC interphase SiC/SiC composites

    NASA Astrophysics Data System (ADS)

    Snead, L. L.; Osborne, M. C.; Lowden, R. A.; Strizak, J.; Shinavski, R. J.; More, K. L.; Eatherly, W. S.; Bailey, J.; Williams, A. M.

    1998-03-01

    Reduced oxygen Hi-Nicalon™ fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either `porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1×10 25 n m -2 ( E>0.1 MeV) in the temperature range of 260 to 1060°C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber.

  16. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source

    NASA Astrophysics Data System (ADS)

    Meng, Erchao; Ueki, Akiko; Meng, Xiang; Suzuki, Hiroaki; Itahara, Hiroshi; Tatsuoka, Hirokazu

    2016-08-01

    Si nanosheets connected to Si nanowires were synthesized using a MnCl2/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH4 or SiCl4. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  17. Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

    NASA Astrophysics Data System (ADS)

    Kim, Geun-Myeong; Oh, Young Jun; Lee, Chang Hwi; Chang, K. J.

    2014-03-01

    In metal-oxide-semiconductor field effect transistors (MOSFETs) it is known that implanted B dopants easily segregate to the oxide during thermal annealing after ion implantation, causing threshold voltage shift and sheet resistance increase. On the other hand, SiGe alloys have been considered as a promising material for p-type MOSFETs due to reduced B diffusion and high hole mobility. However, there is a lack of studies for B diffusion in Si/SiO2 and SiGe/SiO2 interfaces. In this work, we perform first-principles density functional calculations to study the mechanism for the B diffusion in Si/SiO2 and SiGe/SiO2 interfaces. We investigate the diffusion pathways and migration barriers by using the climbing nudged elastic band and dimer methods. For Si/SiO2 interface, B in Si turns into an interstitial B and tends to intervene between the Si and bridge O atoms at the interface. The overall migration barrier is calculated to be about 2 eV, comparable to that in bulk SiO2. In SiGe/SiO2, interface Ge atoms enhance the stability of B-related defects in the interface region, resulting in the higher migration barrier of about 3.7 eV. Our results indicate that Si/SiO2 interface does not hinder the B diffusion, however, the B diffusion is suppressed in the presence of interface Ge atoms.

  18. Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Arzhannikova, S. A.; Gismatulin, A. A.; Kamaev, G. N.; Antonenko, A. Kh.; Cherkova, S. G.; Cherkov, A. G.; Kochubei, S. A.; Popov, A. A.; Robert, S.; Rinnert, H.; Vergnat, M.

    2013-01-01

    Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiNx-Si3N4 and Si-SiO2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.

  19. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  20. Inherent Si dangling bond defects at the thermal (110)Si/SiO2 interface

    NASA Astrophysics Data System (ADS)

    Keunen, K.; Stesmans, A.; Afanas'Ev, V. V.

    2011-08-01

    Stimulated by the growing manifestation in advanced semiconductor device development, an extensive multifrequency electron spin resonance (ESR) study has been carried out on the thermal (110)Si/SiO2 interface in terms of occurring paramagnetic point defects as a function of oxidation temperature Tox (200-1125 °C), with seclusion of the H-passivation factor. The main type of defect observed is a Pb-type interface center closely related to the Pb(111) and Pb0(100) variants (Si3 ≡ Si•) characteristic for the (111) and (100)Si faces, respectively. The inferred principal g matrix values (g// = 2.0018 and g⊥ = 2.0082 for Tox = 800 °C), splitting parameters of the resolved 29Si hyperfine doublet, and line width behavior closely resemble those of Pb0(100), from which the defect is typified as Pb0(110). For low Tox, an unexpectedly high density of Pb0(110) defects (˜7 × 1012 cm-2) is observed, which gradually dwindles for Tox increasing above ˜700 °C to approach ˜4 × 1012 cm-2 for Tox → 1125 °C. The behavior is related to interfacial stress release as a result of global structural relaxation of the top SiO2 layer, an effect also signaled by attendant alterations in ESR parameters, including a drop in ESR line width and a change in line shape symmetry and g⊥. Comparison with previous ESR data on (111)Si/SiO2 and (100)Si/SiO2 interfaces indicates that, in terms of Pb type, the (110) face is the worst of all three low-index Si interfaces, i.e., [Pb0(100)] < [Pb(111)] < [Pb0(110)], in contrast with the common electrically inferred interface trap density order; only for Tox ⩾ 900 °C does the (110) face slightly improve on the (111)Si one, raising caution with the application of (110)Si/SiO2 in terms of vulnerability during device operation. The comparison further shows that, unlike a textbook quote, the density of occurring Pb(0) centers is not found to be proportional to Si surface areal atom density or available Si bond density. Instead, an empirically

  1. Si Isotopes of Brownleeite

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  2. Fabrication and characterization of CuxSi1-x films on Si (111) and Si (100) by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Wu, Jun; He, Zhiqiang; Xie, Jun; Lu, Jingqi; Tu, Rong; Zhang, Lianmeng; Shi, Ji

    2016-05-01

    The CuxSi1-x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η"-Cu3Si formed on Si (111) at I0 = 1.0-2.0 J/cm2. The films were consisted of Cu, η'-Cu3Si, ɛ-Cu15Si4 and δ-Cu0.83Si0.17 at Td = 100-500 °C on Si (001). The films were the single phase of η-Cu3Si at Td = 700 °C. In the case of Si (111), the phase structures transformed from Cu to Cu + η'-Cu3Si to η'-Cu3Si to η'-Cu3Si + η-Cu3Si with the increasing of Td. Rectangular grains were formed on Si (001), whereas triangular grains on Si (111). Cu (001) film was epitaxially grown on Si (001) at I0 = 1.5 J/cm2 and Td = 20 °C. η-Cu3Si (001) epitaxial layer was formed on Si (111) at I0 = 1.5 J/cm2 and Td = 700 °C. The epitaxial relationships of Cu (001)[100]//Si (001)[110] and η-Cu3Si (001)[-110]//Si (111)[11-2] were identified.

  3. Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures

    NASA Astrophysics Data System (ADS)

    Mala, S. A.; Tsybeskov, L.; Lockwood, D. J.; Wu, X.; Baribeau, J.-M.

    2014-11-01

    Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  4. Electron Spin Qubits in Si/SiGe Quantum Dots

    NASA Astrophysics Data System (ADS)

    Eriksson, Mark

    2010-10-01

    It is intriguing that silicon, the central material of modern classical electronics, also has properties well suited to quantum electronics. Recent advances in Si/SiGe quantum devices have enabled the creation of high-quality silicon quantum dots, also known as artificial atoms. Motivated in part by the potential for very long spin coherence times in this material, we are pursuing the development of individual electron spin qubits in silicon quantum dots. I will discuss recent demonstrations of single-shot spin measurement in a Si/SiGe quantum dot spin qubit, and the demonstration of spin-relaxation times longer than one second in such a system. These and similar measurements depend on a knowledge of tunnel rates between quantum dots and nearby reservoirs or between pairs of quantum dots. Measurements of such rates provide an opportunity to revisit classic experiments in quantum mechanics. At the same time, the unique features of the silicon conduction band lead to novel and unexpected effects, demonstrating that Si/SiGe quantum dots provide a highly controlled experimental system in which to study ideas at the heart of quantum physics.

  5. Luminescence of Degraded Si-SiO2 Structures

    NASA Astrophysics Data System (ADS)

    Baraban, A. P.; Dmitriev, V. A.; Gadzhala, A. A.

    2014-09-01

    Possibilities of using electroluminescence (EL) and cathodoluminescence (CL) in the spectral range 250-800 nm to investigate physical-chemical processes taking place in Si-SiO2 structures as a result of extreme external actions (strong electric fields or γ-radiation) are considered. It is found that degradation processes along with changes in the electrophysical characteristics of Si-SiO2 structures are revealed in changes in the luminescence spectra, especially in the red region. The similarity of the changes in the CL and EL spectra of Si-SiO2 structures exposed to field and radiation points to a similarity in the processes taking place during degradation, which is confirmed by the qualitative similarity of the changes in the charge characteristics. The near-invariance of the spectral composition of the luminescence is an indication that the processes taking place during degradation do not lead to the formation of new luminescence centers, but modify the concentration of already existing biographical defects. This is evidence of the existence of a direct link between resistance to degradation and the technology of formation of the oxide layer on the silicon surface.

  6. Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

    NASA Technical Reports Server (NTRS)

    Lightfoot, A.; Sheldon, B. W.; Flint, J. H.; Haggerty, J. S.

    1989-01-01

    The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

  7. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    NASA Astrophysics Data System (ADS)

    Djeniže, S.; Srećković, A.; Bukvić, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3 s3 p22D-3 s24 p2Po, 3 s23 d2D-3 s24 f2Fo, and 3 s24 p2Po-3 s24 d2D transitions, the Si III line intensity ratios in the 3 s3 d3D-3 s4 p3Po, 3 s4 p3Po-3 s4 d3D, 3 s4 p3Po-3 s5 s3S, 3 s4 s3S-3 s4 p3Po, and 3 s4 f3Fo-3 s5 g3G transitions, and the Si IV line intensity ratios in the 4 p2Po-4 d2D and 4 p2Po-5 s2S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  8. High Temperature Si-doped BN Interphases for Woven SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Hurwitz, Frances; Yun, Hee Mann; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    The hydrolytic stability of high-temperature deposited Si-doped BN has been shown in the past to be superior in comparison to "pure" BN processed at similar or even higher temperatures. This type of material would be very desirable as a SiC/SiC composite interphase that is formed by chemical infiltration into multi-ply woven preform. However, due to rapid deposition on the preform outer surface at the high processing temperature, this has proven very difficult. To overcome this issue, single plies of woven fabric were infiltrated with Si-doped BN. Three composite panels of different SiC fiber types were fabricated with Si-doped BN interphases including Sylramic, Hi-Nicalon Type S and Sylramic-iBN fiber-types. The latter fiber-type possesses a thin in-situ grown BN layer on the fiber surface. High Si contents (approx. 7 to 10 a/o) and low oxygen contents (less than 1 a/o) were achieved. All three composite systems demonstrated reasonable debonding and sliding properties. The coated Sylramic fabric and composites were weak due to fiber degradation apparently caused during interphase processing by the formation of TiN crystals on the fiber surface. The Hi-Nicalon Type S composites with Si-doped BN interphase were only slightly weaker than Hi-Nicalon Type S composites with conventional BN when the strength on the load-bearing fibers at failure was compared. On the other hand, the Sylramic-iBN fabric and composites with Si-doped BN showed excellent composite and intermediate temperature stress-rupture properties. Most impressive was the lack of any significant interphase oxidation on the fracture surface of stress-ruptured specimens tested well above matrix cracking at 815C.

  9. Ab initio chemical kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 under a-Si/H CVD conditions.

    PubMed

    Raghunath, P; Lin, M C

    2013-10-24

    The kinetics and mechanisms for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 have been investigated by ab initio molecular orbital theory based on the QCISD(T)/CBS//QCISD/6-311++G(d,p) method in conjunction with quantum statistical variational Rice-Ramsperger-Kassel-Marcus (RRKM) calculations. For the barrierless radical association processes, their variational transition states have been characterized by the CASPT2//CASSCF method. The species involved in the study are known to coexist under CVD conditions. The results show that the association reaction of SiH2 and Si2H6 producing Si3H8 occurs by insertion via its lowest-energy path forming a loose hydrogen-bonding molecular complex with 8.3 kcal/mol binding energy; the reaction is exothermic by 55.0 kcal/mol. The chemically activated Si3H8 adduct can fragment by several paths, producing SiH4 + SiH3SiH (-0.7 kcal/mol), Si(SiH3)2 + H2 (-1.4 kcal/mol), and SiH3SiH2SiH + H2 (-1.4 kcal/mol). The predicted enthalpy changes as given agree well with available thermochemical data. Three other decomposition channels of Si3H8 occurring by Si-H or Si-Si breaking were found to be highly endothermic, and the reactions take place without a well-defined barrier. The heats of formation of Si3H8, SiH2SiH, Si2H4, i-Si3H7, n-Si3H7, Si(SiH3)2, and SiH3SiH2SiH have been predicted and found to be in close agreement with those available data in the literature. The product branching rate constants for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the thermal unimolecular decomposition of Si3H8 for all low-energy paths have been calculated with multichannel variational RRKM theory covering varying P,T conditions typically employed in PECVD and Cat-CVD processes for hydrogenated amorphous silicon (a-Si/H) film growth. The results were also found to be in good agreement with available kinetic data. Our kinetic results may be employed to model and control very large-area a-Si/H film growth for a

  10. Graphene-Si heterogeneous nanotechnology

    NASA Astrophysics Data System (ADS)

    Akinwande, Deji; Tao, Li

    2013-05-01

    It is widely envisioned that graphene, an atomic sheet of carbon that has generated very broad interest has the largest prospects for flexible smart systems and for integrated graphene-silicon (G-Si) heterogeneous very large-scale integrated (VLSI) nanoelectronics. In this work, we focus on the latter and elucidate the research progress that has been achieved for integration of graphene with Si-CMOS including: wafer-scale graphene growth by chemical vapor deposition on Cu/SiO2/Si substrates, wafer-scale graphene transfer that afforded the fabrication of over 10,000 devices, wafer-scalable mitigation strategies to restore graphene's device characteristics via fluoropolymer interaction, and demonstrations of graphene integrated with commercial Si- CMOS chips for hybrid nanoelectronics and sensors. Metrology at the wafer-scale has led to the development of custom Raman processing software (GRISP) now available on the nanohub portal. The metrology reveals that graphene grown on 4-in substrates have monolayer quality comparable to exfoliated flakes. At room temperature, the high-performance passivated graphene devices on SiO2/Si can afford average mobilities 3000cm2/V-s and gate modulation that exceeds an order of magnitude. The latest growth research has yielded graphene with high mobilities greater than 10,000cm2/V-s on oxidized silicon. Further progress requires track compatible graphene-Si integration via wafer bonding in order to translate graphene research from basic to applied research in commercial R and D laboratories to ultimately yield a viable nanotechnology.

  11. SEMICONDUCTOR MATERIALS Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Xiaopeng, Wu; Xiaoqing, Chen; Lijie, Sun; Shun, Mao; Zhuxi, Fu

    2010-10-01

    A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I—V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n-SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

  12. Preparation and photoluminescence of nc-Si/SiO2 MQW

    NASA Astrophysics Data System (ADS)

    Cheng, Buwen; Yu, Jinzhong; Yu, Zhuo; Lei, Zhenlin; Li, Daizong; Wang, Qiming

    1998-08-01

    The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon (nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0 nm a-Si wells separated by 5 nm SiO2 barriers, most of the a-Si were crystallized to silicon grains after laser annealing, and the size of the grains is 3.8 nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10 K. The wavelength of the peaks were 810 nm, 825 nm and 845 nm, respectively.

  13. n-3 Polyunsaturated fatty acids inhibit Fc ε receptor I-mediated mast cell activation.

    PubMed

    Wang, Xiaofeng; Ma, David W L; Kang, Jing X; Kulka, Marianna

    2015-12-01

    In vivo models show that n-3 polyunsaturated fatty acids (PUFA) inhibit some of the processes associated with allergic inflammation but the direct effect of n-3 PUFA on mast cells, the major effector cells in allergy, is poorly understood. We sought to determine the effect and mechanism of n-3 PUFA on Fc ε receptor I (FcεRI)-mediated signal transduction and mast cell activation. Bone marrow-derived mast cells (BMMC) were differentiated from bone marrow obtained from C57BL/6 wild-type (WT) and fat-1 transgenic mice. The fat-1 mice express fatty acid n-3 desaturase and produce endogenous n-3 PUFA. For comparison, exogenous n-3 PUFA were supplemented to WT BMMC and human mast cell (LAD2) cultures. Fat-1 BMMC released less β-hexosaminidase (β-hex) and cysteinyl leukotrienes and produced less tumor necrosis factor and chemokine (C-C motif) ligand 2. n-3 PUFA supplementation reduced LAD2 and BMMC degranulation (β-hex release) following FcεRI activation. Fat-1 BMMC expressed less constitutive Lyn and linker of activated T cells (LAT), and FcεRI-mediated phosphorylation of Lyn, spleen tyrosine kinase and LAT were reduced in fat-1 BMMC. Although the expression of surface and whole cell FcεRI was similar in WT and fat-1 BMMC, unstimulated fat-1 BMMC showed reduced FcεRI localization to lipid rafts, and stimulation with antigen resulted in aberrant FcεRI shuttling to the rafts. Our results show that n-3 PUFA suppress FcεRI-mediated activation of mast cells, which results in reduced mediator release. This effect is associated with a decrease in LAT and Lyn expression as well as abnormal shuttling of FcεRI to lipid rafts. PMID:26363927

  14. Atractylenolide I-mediated Notch pathway inhibition attenuates gastric cancer stem cell traits

    SciTech Connect

    Ma, Li; Mao, Rurong; Shen, Ke; Zheng, Yuanhong; Li, Yueqi; Liu, Jianwen; Ni, Lei

    2014-07-18

    Highlights: • This paper supports the anti-tumor effects of AT-I on gastric cancer in vitro. • AT-I attenuates gastric cancer stem cell traits. • It is the systematic study regarding AT-I suppression of Notch pathway in GC and GCSLCs. - Abstract: Atractylenolide I (AT-I), one of the main naturally occurring compounds of Rhizoma Atractylodis Macrocephalae, has remarkable anti-cancer effects on various cancers. However, its effects on the treatment of gastric cancer remain unclear. Via multiple cellular and molecular approaches, we demonstrated that AT-I could potently inhibit cancer cell proliferation and induce apoptosis through inactivating Notch pathway. AT-I treatment led to the reduction of expressions of Notch1, Jagged1, and its downstream Hes1/ Hey1. Our results showed that AT-I inhibited the self-renewal capacity of gastric stem-like cells (GCSLCs) by suppression of their sphere formation capacity and cell viability. AT-I attenuated gastric cancer stem cell (GCSC) traits partly through inactivating Notch1, leading to reducing the expressions of its downstream target Hes1, Hey1 and CD44 in vitro. Collectively, our results suggest that AT-I might develop as a potential therapeutic drug for the treatment of gastric cancer.

  15. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys

    PubMed Central

    Li, Jiehua; Hage, Fredrik S.; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-01-01

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP ‘patch’ dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption. PMID:27120994

  16. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    PubMed

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-01-01

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption. PMID:27120994

  17. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys

    NASA Astrophysics Data System (ADS)

    Li, Jiehua; Hage, Fredrik S.; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-04-01

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP ‘patch’ dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

  18. Improving Thermomechanical Properties of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.; Bhatt, Ramakrishna T.

    2006-01-01

    Today, a major thrust toward improving the thermomechanical properties of engine components lies in the development of fiber-reinforced silicon carbide matrix composite materials, including SiC-fiber/SiC-matrix composites. These materials are lighter in weight and capable of withstanding higher temperatures, relative to state-of-the-art metallic alloys and oxide-matrix composites for which maximum use temperatures are in the vicinity of 1,100 C. In addition, the toughness or damage tolerance of the SiC-matrix composites is significantly greater than that of unreinforced silicon-based monolithic ceramics. For successful application in advanced engine systems, the SiC-matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetimes. Inasmuch as the high-temperature structural lives of ceramic materials are typically limited by creep-induced growth of flaws, a key property required of such composite materials is high resistance to creep under conditions of use. Also, the thermal conductivity of the materials should be as high as possible so as to minimize component thermal gradients and thermal stresses. A state-of-the-art SiC-matrix composite is typically fabricated in a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by thermally stable high-performance fibers, (2) chemical-vapor infiltration (CVI) of a fiber-coating material such as boron nitride (BN) into the preform, and (3) infiltration of an SiC-based matrix into the remaining porosity in the preform. Generally, the matrices of the highest-performing composites are fabricated by initial use of a CVI SiC matrix component that is typically more thermally stable and denser than matrix components formed by processes other than CVI. As such, the initial SiC matrix component made by CVI provides better environmental protection to the coated fibers embedded within it. Also, the denser CVI SiC imparts to the

  19. Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO{sub 2} interfaces and their incorporation into SiO{sub 2}

    SciTech Connect

    Takahashi, Norihiko; Yamasaki, Takahiro; Kaneta, Chioko

    2014-06-14

    Dynamics of Si(100)-oxidation processes at the Si/SiO{sub 2} interface and in the SiO{sub 2} region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO{sub 2} and/or substrate. Classical molecular dynamics (MD) simulations with variable charge interatomic potentials are performed to clarify these atomic processes. By incorporating oxygen atoms, two-folded Si atoms are formed after structural relaxation at the interface and are emitted as SiO molecules into SiO{sub 2}. The energy barrier of the SiO emission is estimated to be 1.20 eV on the basis of the enthalpy change in an MD simulation. The emitted SiO molecule is incorporated into the SiO{sub 2} network through a Si-O rebonding process with generating an oxygen vacancy. The energy barrier of the SiO incorporation is estimated to be 0.79–0.81 eV. The elementary process of oxygen vacancy diffusion leading to the complete SiO incorporation is also simulated, and the energy barriers are found to be relatively small, 0.71–0.79 eV. The energy changes of Si emissions into the substrate and SiO{sub 2} are estimated to be 2.97–7.81 eV, which are larger than the energy barrier of the SiO emission. This result suggests that, at the ideally flat Si/SiO{sub 2} interface, the SiO emission into the SiO{sub 2} region occurs prior to the Si emission, which is consistent with previous theoretical and experimental studies. The above mentioned typical atomic processes are successfully extracted from some (or one) of MD simulations among many trials in which a statistical procedure is partly employed. Our results give a unified understanding of Si oxidation processes from an atomistic point of view.

  20. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    NASA Astrophysics Data System (ADS)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  1. Synthesis and properties of Si and SiGe/Si nanowires

    NASA Astrophysics Data System (ADS)

    Redwing, Joan M.; Lew, Kok-Keong; Bogart, Timothy E.; Pan, Ling; Dickey, Elizabeth C.; Carim, A. H.; Wang, Yanfeng; Cabassi, Marco A.; Mayer, Theresa S.

    2004-06-01

    The fabrication of semiconductor nanowires, in which composition, size and conductivity can be controlled in both the radial and axial direction of the wire is of interest for fundamental studies of carrier confinement as well as nanoscale device development. In this study, group IV semiconductor nanowires, including Si, Ge and SixGe1-x alloy nanowires were fabricated by vapor-liquid-solid (VLS) growth using gaseous precursors. In the VLS process, gold is used to form a liquid alloy with Si and Ge which, upon supersaturation, precipitates a semiconductor nanowire. Nanoporous alumina membranes were used as templates for the VLS growth process, in order to control the diameter of the nanowires over the range from 45 nm to 200 nm. Intentional p-type and n-type doping was achieved through the addition of either trimethylboron, diborane or phosphine gas during nanowire growth. The electrical properties of undoped and intentionally doped silicon nanowires were characterized using field-assisted assembly to align and position the wires onto pre-patterned test bed structures. The depletion characteristics of back-gated nanowire structures were used to determine conductivity type and qualitatively compare dopant concentration. SiGe and SiGe/Si axial heterostructure nanowires were also prepared through the addition of germane gas during VLS growth. The Ge concentration in the wires was controllable over the range from 12 % to 25% by varying the inlet GeH4/SiH4 ratio.

  2. Selective Growth of Nanocrystalline 3C-SiC Thin Films on Si

    NASA Astrophysics Data System (ADS)

    Beke, D.; Pongrácz, A.; Battistig, G.; Josepovits, K.; Pécz, B.

    2010-11-01

    Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial 3C-SiC nanocrystals can be grown at the Si side of a SiO2/Si interface without void formation at the SiC/Si interface. CO diffusion and SiC nanocrystal formation on different silicon based systems (SiO2/Si, Si3N4/3Si and SiO2/LPCVD poly-Si) after CO treatment at 105 Pa at elevated temperatures (T>1000° C) will be presented. By optimizing the annealing time a thin continuous nanocrystalline SiC layer has been formed. Applying a patterned Si3N4 capping layer as a barrier layer against CO diffusion, SiC nanocrystal formation at the Si3N4/Si interface is inhibited. We will present the selective growth of SiC nanocrystals using the before mentioned technique.

  3. Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; George, T.; Gunapala, S. D.

    1993-01-01

    Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Se layers have been fabricated and demonstrated.

  4. Optimum condition to fabricate 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of Si method with Si source

    NASA Astrophysics Data System (ADS)

    Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

    2012-12-01

    A low temperature (≦120 °C) fabrication method to form relatively thick SiO2/Si structure with a Si source has been developed using the advanced nitric acid oxidation of Si (NAOS) method, and the formation mechanism has been investigated. The reaction mechanism consists of direct oxidation of Si, dissolution of Si sources, and surface reaction of the dissolved Si species. The dissolved Si species is present in HNO3 solutions as mono-silicic acid and reacts with oxidizing species formed by decomposition of HNO3 on an ultrathin SiO2 layer (i.e., 1.4 nm) produced by the direct oxidation of Si substrates with HNO3 solutions. To achieve a uniform thickness of SiO2 layer with a smooth surface, HNO3 solutions with concentrations higher than 60 wt. % are needed because the dissolved Si species polymerizes in HNO3 solutions when the concentration is below 60 wt. %, resulting in the formation of SiO2 particles in HNO3, which are deposited afterwards on the SiO2 layer. In spite of the low temperature formation at 120 °C, the electrical characteristics of the advanced NAOS SiO2 layer formed with 68 wt. % HNO3 and subsequent post-metallization anneal at 250 °C are nearly identical to those of thermal oxide formed at 900 °C.

  5. Novel Si networks in Ca/Si phase diagram under pressure

    NASA Astrophysics Data System (ADS)

    Gao, Guoying; Ashcroft, Neil; Hoffmann, Roald

    2014-03-01

    In the Ca/Si phase diagram, many compositions are known. In these calcium silicides, silicon atoms form many different organizations, for example, at low pressure silicons are isolated silicon atoms in Ca2Si, Si chains in CaSi and corrugated hexagonal Si layers and a three-dimensional network of sp2 bonds in CaSi2. The crystal structures for these silicides under pressure have not been studied completely, and we are very interested in the new chemical and physical behavior of Si in these silicides under pressure. Therefore, we take a theoretical study of Ca2Si, CaSi and CaSi2 under pressure. We predicted many interesting Si networks in the calcium silicides under pressure. Si atoms form Si chains in Ca2Si, flat quadrangular and hexagonal Si layers in CaSi, and 6-coordinated Si tetrahedrons and 4, 8-coordinated Si octahedrons in CaSi2 at high pressure. All of these predicted structures are dynamically stable. Moreover, these calcium silicides are all metals. Some of them are good candidates to be superconductors. G. G., R. H., and N. W. A. acknowledge support by the NSF through research grant CHE-0910623 and DMR-0907425, and also EFree by the U.S. Department of Energy (Award No. DESC0001057 at Cornell).

  6. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    SciTech Connect

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing.

  7. Mo-Si alloy development

    SciTech Connect

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  8. A swelling-suppressed Si/SiOx nanosphere lithium storage material fabricated by graphene envelopment.

    PubMed

    Yoo, Hyundong; Park, Eunjun; Kim, Hyekyoung; Bae, Juhye; Chang, Hankwon; Jang, Hee Dong; Kim, Hansu

    2016-06-28

    A swelling-suppressed, Si nanocrystals-embedded SiOx nanospheres lithium storage material was prepared by graphene envelopment. The free void spaces formed between the graphene envelope and Si/SiOx nanospheres effectively accommodated the volume changes of Si/SiOx nanospheres during cycling, which significantly suppresses the swelling behavior and improves the capacity retention up to 200 cycles. PMID:27264845

  9. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  10. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Fukuda, Koichi; Mori, Takahiro; Mizubayashi, Wataru; Migita, Shinji; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Matsukawa, Takashi; Ota, Hiroyuki

    2016-04-01

    A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

  11. The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

    SciTech Connect

    Yang, Chen; Chen, Zhiming; Hu, Jichao; Ren, Zhanqiang; Lin, Shenghuang

    2012-06-15

    Highlights: ► A monocrystalline Si film was demonstrated by XRD to epitaxially grow on the 6H-SiC substrate. ► A 4:5 Si-to-SiC lattice matching structure was observed at the Si/SiC interface. ► The calculated value of the actual lattice mismatch is only 0.26%. ► Defects can be effectively reduced at the 4:5 Si-to-SiC lattice matching Si/SiC interface. -- Abstract: Due to a huge lattice mismatch of about 20% theoretically existing between SiC and Si, it is difficult for growing monocrystalline Si/SiC heterojunction to realize the light control of SiC devices. However, based on a 4:5 Si-to-SiC atomic lattice matching interface structure, the monocrystalline Si films were epitaxially prepared on the 6H-SiC (0 0 0 1) substrate by hot-wall chemical vapor deposition in our work. The film was characterized by X-ray diffraction analysis with only (1 1 1) orientation occurring. The X-ray rocking curves illustrated good symmetry with a full width at half maximum of 0.4339° omega. A 4:5 Si-to-SiC atomic matching structure of the Si/6H-SiC interface clearly observed by the transmission electron microscope revealed the essence of growing the monocrystalline Si film on the SiC substrate.

  12. Electrical properties of Si/Si interfaces by using surface-activated bonding

    SciTech Connect

    Liang, J.; Miyazaki, T.; Morimoto, M.; Nishida, S.; Shigekawa, N.

    2013-11-14

    Electrical properties of n-Si/n-Si, p-Si/n-Si, and p{sup −}-Si/n{sup +}-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy of the n-Si/n-Si interfaces reveals no evidence of oxide layers at the interfaces. From the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions, it is found that the interface states, likely to have formed due to the surface activation process using Ar plasma, have a more marked impact on the electrical properties of the p-Si/n-Si junctions. An analysis of the temperature dependence of the I-V characteristics indicates that the properties of carrier transport across the bonding interfaces for reverse-bias voltages in the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions can be explained using the trap-assisted-tunneling and Frenkel-Poole models, respectively.

  13. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  14. Straight β-SiC nanorods synthesized by using C-Si-SiO2

    NASA Astrophysics Data System (ADS)

    Lai, H. L.; Wong, N. B.; Zhou, X. T.; Peng, H. Y.; Au, Frederick C. K.; Wang, N.; Bello, I.; Lee, C. S.; Lee, S. T.; Duan, X. F.

    2000-01-01

    Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C-Si-SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the β-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 μm. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported.

  15. Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices

    NASA Astrophysics Data System (ADS)

    Hijazi, M.; Kazan, M.

    2016-06-01

    We present a predictive Boltzmann model for the cross-plane thermal conductivity in superlattices. The developed model considers particle-like phonons exhibiting wave characteristics at the interfaces and makes the assumption that the phonon heat transport in a superlattice has a mixed character. Exact Boltzmann equation comprising spatial dependence of phonon distribution function is solved to yield a general expression for the lattice thermal conductivity. The intrinsic phonon scattering rates are calculated from Fermi's golden rule, and the model vibrational parameters are derived as functions of temperature and crystallographic directions by using elasticity theory-based lattice dynamics approach. The developed theory is then adapted to calculate the cross-plane thermal conductivity of superlattices. It is assumed that the phonons of wavelengths comparable or smaller than the superlattice period or the root mean square irregularity at the superlattice interfaces may be subject to a resistive scattering mechanism at the interfaces, whereas the phonons of wavelengths much greater than the superlattice period undergo ballistic transmission through the interfaces and obey dispersion relations determined by the Brillouin zone folding effects of the superlattice. The accuracy of the concept of mixed phonon transport regime in superlattices is demonstrated clearly with reference to experimental measurements regarding the effects of period thickness and temperature on the cross-plane thermal conductivity of Si/Si0.7Ge0.3 and Si0.84Ge0.16/Si0.76Ge0.3 superlattices.

  16. SiC Micropipe Sprecta

    NASA Astrophysics Data System (ADS)

    Leff, David; Frasca, Albert

    1997-05-01

    This report focuses on the spectral response of 4H SiC PN junction micropipes when reverse and forward biased. Reverse biased 4H SiC PN junctions give a very strong UV line, 385nm (3.22eV), and blue line, 475nm (2.61eV). In the forward bias direction the spectra do not contain the UV, only the blue line, 490nm (2.53eV), with considerably better resolution. For isolating and measuring the micropipe spectra and structure, a sample fixture was fabricated from a power transistor case. In order to activate the micropipes in the SEM, a vacuum feed-thru was made from another power transistor case. The emitter and base leads were used as the vacuum feed-thru and were used to mount a very fine spring for making contact to the 1mm X 1mm PN junction on the SiC chip. In our attempts to study these pipes and their properties, we utilized the SE, BSE, and X-ray detectors on the SEM, a stereo microscope, and a grading monochrometer. From the utilization of this equipment, we found the locations of the micropipes, the forward and reverse bias spectrum, and the possible structural faults in the SiC. Thanks to Dr. Philip Neudeck at LeRC, and Dr. Kenneth Bladh of Wittenberg.

  17. Combinatorial growth of Si nanoribbons

    PubMed Central

    2011-01-01

    Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth. PMID:21794158

  18. The Use of SI Units.

    ERIC Educational Resources Information Center

    British Standards Institution, London (England).

    This booklet (referred to as PD 5686:1969) replaces the 1967 edition by including subsequent recommendations of the International Organization for Standardization (ISO) and the General Conference on Weights and Measures (CGPM). The International System of Units (SI) is described and rules are given for the formation of derived units and decimal…

  19. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    NASA Technical Reports Server (NTRS)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  20. Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)

    NASA Astrophysics Data System (ADS)

    Toufik, Zarede; Hamza, Lidjici; Mohamed, Fathi; Achour, Mahrane

    2016-05-01

    In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)), using the automat for simulation of hetero-structures (AFORS-Het) software. This cell is composed of four main layers of silicon (Si): (i) 5 nm amorphous silicon doped n, (ii) 100 μm crystalline silicon (substrate) doped p, (iii) 5 nm amorphous silicon doped p, and (iv) 3 nm amorphous silicon intrinsic. This cell has a front and rear metal contact of aluminum and zinc oxide (ZnO) front layer transparent conductive oxide of 80 nm thickness. The simulations were performed at conditions of "One Sun" irradiation with air mass 1.5 (AM1.5), and under absolute temperature T = 300 K. The simulation results have shown a high electrical conversion efficiency of about 30.29% and high values of open circuit voltage V oc = 779 mV. This study has also shown that the studied cell has good quality light absorption on a very broad spectrum.

  1. Enhanced light emission from Si nanocrystals produced using SiOx/SiO2 multilayered silicon-rich oxides

    NASA Astrophysics Data System (ADS)

    Yoon, Jong-Hwan

    2015-07-01

    The light emission from Si nanocrystals (NCs) produced in SiO2 by annealing of SiOx/SiO2 multilayered silicon-rich oxide (SRO) is examined as a function of the SiOx layer thickness. Multilayered SRO structures are shown to produce a significant increase in emission intensities with a large redshift of spectra as compared with a single-layer SRO film. A multilayered SRO film with ∼6-nm thick SiO1.45 layers exhibits a 13-fold increase in the emission intensity with a redshift of ∼70 nm relative to a single-layer SiO1.45 SRO film with a thickness equivalent to the total SiO1.45 layer thickness in the multilayered film. The transmission electron microscopy analyses indicate that the enhancement of the emission intensity with the redshift of spectrum is caused by the enhanced aggregation of phase separated Si atoms in the former SiOx layers due to the hindering of interlayer diffusion of Si by the neighboring SiO2 layers.

  2. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira; Katoh, Yutai; Hasegawa, Akira; Snead, L.; Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  3. Glass-Si heterojunction solar cells

    NASA Technical Reports Server (NTRS)

    Anderson, R. L.

    1975-01-01

    Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

  4. Hybrid single mode lasers fabricated using Si/SiO2/SiON micromachined platforms

    NASA Technical Reports Server (NTRS)

    Ksendzov, A.; Mansour, K.

    2003-01-01

    We have devised a hybridization scheme that, given suitable Fabri-Perot (F-P) ain medium, allows us to fabricate small, mechanically robust single frequency lasers in a wide spectral range, limited only by the transparency of the SiON material.

  5. Improved characterization of the Si-SiO2 interface

    NASA Technical Reports Server (NTRS)

    Su, P.; Sher, A.; Tsuo, Y. H.; Moriarty, J. A.; Miller, W. E.

    1980-01-01

    Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

  6. Radio Frequency Single Electron Transistors on Si/SiGe

    NASA Astrophysics Data System (ADS)

    Yuan, Mingyun; Yang, Zhen; Rimberg, A. J.; Eriksson, M. A.; Savage, D. E.

    2011-03-01

    Superconducting single electron transistors (S-SETs) are ideal for charge state readout due to their high sensitivity and low back-action. Upon successful formation of quantum dots(QDs) on Si/SiGe, aluminum S-SETs are added in the vicinity of the QDs. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state at 0.3 K. We have formed a matching network for an SET with an off-chip inductor. The reflection coefficient of the radio frequency(RF) signal is shown to be modulated by the SET resistance. Efforts to develop an on-chip matching network and perform charge sensing with the RF-SETs are in progress. Recent experimental results will be discussed. This research was supported by the NSA, LPS and ARO.

  7. Mn4Si7 nanoinclusions in Mn-implanted Si

    NASA Astrophysics Data System (ADS)

    Romanowski, P.; Bak-Misiuk, J.; Sobczak, K.; Dziawa, P.; Dynowska, E.; Szczepanska, A.; Misiuk, A.

    2013-12-01

    Silicon single crystals were implanted with 160 keV Mn+ ions to a dose of 1×1016 cm-2 and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn4Si7 nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions.

  8. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  9. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  10. High energy electron-beam irradiation effects in Si-SiOx structures

    NASA Astrophysics Data System (ADS)

    Nesheva, D.; Dzhurkov, V.; Šćepanović, M.; Bineva, I.; Manolov, E.; Kaschieva, S.; Nedev, N.; Dmitriev, S. N.; Popović, Z. V.

    2016-02-01

    Homogeneous SiOx films (x=1.3, 200 nm and 1000 nm thick) and composite a-Si-SiOy films (y ∼ 1.80) containing amorphous Si nanoparticles have been prepared on crystalline (c-Si) substrate. A part of the films was irradiated at temperature below 50°C by 20 MeV electrons with two different fluences (7.2x1014 and 1.44x1015 el.cm-2). Atomic force microscopy (AFM), Raman spectroscopy and capacitance (conductance) - voltage (C(G)-V) measurements on Al/c-Si/SiOx/Al or Al/c-Si/(a-Si-SiOy)/Al structures were used to get information about the irradiation induced changes in the surface morphology, the phase composition in the film bulk and at the Si-SiOx interface. The AFM results show that the electron irradiation decreases the film surface roughness of the films annealed at 250°C. The Raman scattering data imply appearance of amorphous silicon phase and some structural changes in the oxide matrix of the homogeneous SiOx films. In the composite films electron beam stimulated decrease of the defects at the a-Si/SiOy interface has been assumed. The initial C(G)-V results speak about electron induced formation of electrically active defects in the SiOy matrix of the composite films.

  11. Si@SiOx/graphene hydrogel composite anode for lithium-ion battery

    NASA Astrophysics Data System (ADS)

    Bai, Xuejun; Yu, Yueyang; Kung, Harold H.; Wang, Biao; Jiang, Jianming

    2016-02-01

    A porous 3D graphene hydrogel (GH) composite embedded with Si nanoparticles coated with an ultrathin SiOx layer (Si@SiOx/GH) is successfully synthesized using a solution-based self-assembly process. The thickness of the SiOx coating, formed by an ozone treatment of the 30-50 nm diameter Si particles, increases with the treatment temperature, and its formation results in the presence of Si2+ and Si4+ on the surface of the Si nanoparticles. The GH provides an electrically conducting network of interconnecting, micron-size open cells bounded by ultrathin stacked graphene sheets onto which the coated Si nanoparticles are dispersed. The agglomeration among the Si particles decreases with increasing extent of surface oxidation. Electrodes constructed with the Si@SiOx/GH containing 71 wt.% Si@SiOx exhibit a stable storage capacity of 1020 mAh g-1 at 4 A g-1 and 1640 mAh g-1 after 140 cycles at 0.1 A g-1. The outstanding electrochemical performance can be attributed to the porous, open cell 3D structure of GH, which provides a large internal space and flexible and electrically conductive graphenic matrix that can accommodate volumetric changes of Si nanoparticles and a highly porous 3D structure of high specific surface area that allows rapid diffusion of Li-ions and easy penetration of electrolyte.

  12. Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

    PubMed

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-01-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P. PMID:25997696

  13. Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System

    PubMed Central

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-01-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P. PMID:25997696

  14. Location and Electronic Nature of Phosphorus in the Si Nanocrystal - SiO2 System

    NASA Astrophysics Data System (ADS)

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-05-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P.

  15. Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD

    SciTech Connect

    Sarney, W.L.; Salamanca-Riba, L.; Zhou, P.; Spencer, M.G.; Taylor, C.; Sharma, R.P.; Jones, K.A.

    1999-07-01

    SiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. The authors added Ge in the form of GeH{sub 2} to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1,000 C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH{sub 2} flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

  16. Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

    NASA Astrophysics Data System (ADS)

    Sugiyama, N.; Moriyama, Y.; Nakaharai, S.; Tezuka, T.; Mizuno, T.; Takagi, S.

    2004-03-01

    The epitaxial growth of Si and SiGe layers on (1 1 0) Si substrates using UHV-CVD is studied with comparing that on (1 0 0) substrates. It is revealed that, while the growth rate on (1 1 0) surfaces is quite lower than that on (1 0 0) surfaces, the Ge content of SiGe is the same between (1 0 0) and (1 1 0) surfaces, meaning that the ratio of decomposition yields of source molecules for Si and Ge are same in both the (1 0 0) and (1 1 0) substrates. This characteristic is expected to lead to the epitaxial growth of SiGe films with uniform Ge content over the three-dimensional patterned structure, which can be utilized for vertical FET and Fin-FETs. Actually, it has been experimentally confirmed that the SiGe films grown over trench structures has a uniform Ge content.

  17. Effect of carbon nanofiber dispersion on the properties of PIP-SiC/SiC composites

    NASA Astrophysics Data System (ADS)

    Taguchi, T.; Hasegawa, Y.; Shamoto, S.

    2011-10-01

    SiC/SiC composites with and without dispersed carbon nanofiber were fabricated by the polymer impregnation and pyrolysis process. The effect of dispersing carbon nanofiber on the mechanical and thermal properties of SiC/SiC composites was investigated. The bending strength and elastic modulus of SiC/SiC composites with carbon nanofiber decreased slightly compared to those of the SiC/SiC composites without the nanofiber. On the other hand, the thermal conductivity of SiC/SiC composites increased with increasing amount of dispersed nanofiber. The dominant reason is considered to be that the pore shape changed from an oblong shape perpendicular to the direction of heat flow to an isotropic. The shape change resulted from the dispersed carbon nanofiber.

  18. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    SciTech Connect

    Ping Wang, Y. Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  19. Si quantum dot structures and their applications

    NASA Astrophysics Data System (ADS)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  20. The effect of Ni:Si ratio on microstructural properties of Ni/Si ohmic contacts to SiC

    NASA Astrophysics Data System (ADS)

    Wzorek, M.; Borysiewicz, M. A.; Czerwinski, A.; Myśliwiec, M.; Ekielski, M.; Ratajczak, J.; Piotrowska, A.; Kątcki, J.

    2016-04-01

    Detailed microstructural studies were performed on Ni/Si ohmic contacts to silicon carbide in order to investigate the effect of initial Ni:Si ratio in as-deposited structures on the occurrence of characteristic defects in Ni silicide layers, such as voids, layer discontinuities, rough surface or rough interface. The chosen range of investigated Ni:Si ratios corresponded to δ-Ni2Si as a dominant phase after complete annealing sequence. Strong effect of the initial stoichiometry on the ohmic contact's microstructure was observed. The highest Ni concentration significantly lowered the temperature at which roughening of the surface and the interface occurred. The middle value of investigated concentrations resulted in the rough interface after high temperature annealing, while the lowest investigated Ni content preserved smooth interface but introduced large voids and layer discontinuities. After the first annealing step, γ-Ni31Si12 and/or δ-Ni2Si phases were detected. In the ohmic contacts (after two-step annealing sequence), beside δ-Ni2Si, the metastable, high temperature phase θ-Ni2Si was detected (also referred to as Ni3Si2·h). This phase can exist within a relatively broad range of Ni:Si stoichiometry. The stoichiometry change toward higher Si content, which occurs during high temperature annealing, was realized through this phase. Superstructures were detected in θ-Ni2Si (Ni3Si2·h) and in γ-Ni31Si12 grains. The effect of the stoichiometry change on the morphology of the Ni silicide layers is discussed.

  1. PtSi/Si LWIR Detectors Made With p+ Doping Spikes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Park, Jin S.; George, Thomas; Fathauer, Robert W.; Jones, Eric W.; Maserjian, Joseph

    1996-01-01

    PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.

  2. Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

  3. Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

    NASA Astrophysics Data System (ADS)

    Hasanah, Lilik; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru; Nandiyanto, Asep Bayu Dani; Murakami, Hideki; Khairrurijal

    2016-02-01

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  4. Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  5. The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

    SciTech Connect

    Srivastava, Pooja; Lee, Kwang-Ryeol; Mizuseki, Hiroshi; Kim, Seungchul; Shin, Mincheol

    2015-08-15

    We show, using density functional theory (DFT) calculations, that the Schottky barrier height (SBH) at the PtSi/Si interface can be lowered by uniaxial strain applied not only on Si but also on PtSi. The strain was applied to the (001) direction of Si and PtSi, which is normal for the interface. The SBH of the hole is lowered by 0.08 eV under 2% of tensile strain on Si and by 0.09 eV under 4 % of compressive strain on PtSi. Because the SBH at PtSi/Si contact is approximately 0.2 eV, this amount of reduction can significantly lower the resistance of the PtSi/Si contact; thus applying uniaxial strain on both PtSi and Si possibly enhances the performance of Schottky barrier field effect transistors. Theoretical models of SB formation and conventional structure model are evaluated. It is found that Pt penetration into Si stabilizes the interface and lowers the SBH by approximately 0.1 eV from the bulk-terminated interface model, which implies that conventionally used bulk-terminated interface models have significant errors. Among the theoretical models of SB formation, the model of strong Fermi level pining adequately explains the electron transfer phenomena and SBH, but it has limited ability to explain SBH changes induced by changes of interface structure.

  6. Ion implantation and diffusion of Al in a {SiO 2}/{Si} system

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Galvagno, G.; Rinaudo, S.; Raineri, V.; Franco, G.; Camalleri, M.; Gasparotto, A.; Carnera, A.; Rimini, E.

    1996-08-01

    The diffusion and segregation of ion implanted Al in SiO 2 and Si layers were studied for several experimental conditions. Al ions were implanted into SiO 2, Si and through a SiO 2 layer into Si substrates at several energies (80, 300, 650 and 6000 keV) and doses (3.4 × 10 14-1 × 10 15 cm -2). The Al diffusion coefficient in SiO 2 was measured at 1200°C for times up to 5 days, and it results five orders of magnitude lower than in Si. The experiments show that the Al atoms implanted into Si do not out-diffuse during thermal treatments from the SiO 2 capping layer, but segregate at the {SiO 2}/{Si} interface. The high segregation coefficient gives rise to a trapping of Al into the oxide layer comparable to the out-diffusion of Al from uncapped Si substrates. The determined parameters for Al diffusion and segregation in the {SiO 2}/{Si} system were introduced in a simulation code to calculate the Al diffusion profiles which result in agreement with the experimental data.

  7. Development of SiAlON materials

    NASA Technical Reports Server (NTRS)

    Layden, G. K.

    1979-01-01

    Cold pressing and sintering techniques were used to produce ceramic test specimens in which the major phase was either Si3N4 or a solid solution having the beta Si3N4 structure. Additional components were incorporated to promote liquid phase sintering. Glass and/or crystalline phase were consequently retained in boundaries between Si3N4 grains which largely determined the physical properties of the bodies. Systems investigated most extensively included R-Si-Al-O-N (R = rare earth element) Zr-Si-Al-O-N, Y-Si-Be-O-N, and R1-R2-Si-O-N. Room temperature and 1370 C modulus of ruptured, 1370 C creep, and oxidation behavior are discussed in terms of phase relationships in a parent quinery, and relavent oxide systems.

  8. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    NASA Astrophysics Data System (ADS)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  9. SiC nanowires: A photocatalytic nanomaterial

    SciTech Connect

    Zhou Weimin; Yan Lijun; Wang Ying; Zhang Yafei

    2006-07-03

    Single-crystal {beta}-SiC nanowires coated with amorphous SiO{sub 2} were synthesized by a simple thermal evaporation technique. The photocatalytic activity of the SiC nanowires was characterized by measuring the photodegradation rate of acetaldehyde catalyzed by SiC as a function of UV irradiation time. It exhibited excellent photocatalytic activity, leading to the efficient decomposition of acetaldehyde by irradiation with UV light. The progress of the photocatalytic reaction can be monitored by the evolution of one of the products, CO{sub 2}. It has been observed that the as-synthesized SiC nanowires (with the SiO{sub 2} coating) have higher catalytic activity than the HF-etched, oxide-free SiC nanowires.

  10. Formation of Si nanocrystals in SiOx, SiOx:C:H films and Si/SiO2 multilayer nano-heterostructures by pulse laser treatments

    NASA Astrophysics Data System (ADS)

    Neizvestniy, I. G.; Volodin, V. A.; Gismatulin, A. A.; Kamaev, G. N.; Antonenko, A. H.; Cherkov, A. G.; Litovchenko, V. G.; Lisovsky, I. P.; Maidanchuk, I. Yu.

    2014-12-01

    Furnace annealing and pulse laser treatments, including nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration and XeCl laser 308 nm wavelength, 10 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous hydrogenated silicon films, SiOx films and multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of impurities on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on nonrefractory substrates.

  11. High temperature compounds for turbine vanes. [of SiC, Si3N4, and Si composites

    NASA Technical Reports Server (NTRS)

    Rhodes, W. H.; Cannon, R. M., Jr.

    1974-01-01

    Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

  12. Characterization of defects in Si and SiO{sub 2}-Si using positrons

    SciTech Connect

    Asoka-Kumar, P.; Lynn, K.G.

    1993-12-31

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed.

  13. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  14. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    SciTech Connect

    Halverson, H.; Curtin, W.A.

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  15. Electron impact collision strengths in Si IX, Si X, and Si XI

    SciTech Connect

    Liang Guiyun; Zhao Gang . E-mail: gzhao@bao.ac.cn; Zeng Jiaolong

    2007-05-15

    Electron impact collision strengths among 560 levels of Si IX, 320 levels of Si X, and 350 levels of Si XI have been calculated using the Flexible Atomic Code of Gu [M.F. Gu, Astrophys. J. 582 (2003) 1241]. Collision strengths {omega} at 10 scattered electron energies, namely 10, 50, 100, 200, 400, 600, 800, 1000, 1500, and 2000 eV, are reported. Assuming a Maxwellian energy distribution, effective collision strengths Y are obtained on a finer electron temperature grid of 0.5, 1.0, 2.0, 3.0, 4.0, 5.0, and 6.0 MK, which covers the typical temperature range of astrophysical hot plasmas. Additionally, radiative rates A and weighted oscillator strengths gf are given for the more probable transitions among these levels. Comparisons of our results with available predictions reported in earlier literature are made and the accuracy of the data is assessed. Most transitions exhibit a good agreement, but large differences in gf appear for a few cases, which are due to the different configuration interactions included in different theoretical calculations. For excitations among levels of the ground and lower excited configurations, large discrepancies of Y may have resulted from the consideration of resonance effects in earlier works.

  16. Surface modifying of SiC particles and performance analysis of SiCp/Cu composites

    NASA Astrophysics Data System (ADS)

    Ming, Hu; Yunlong, Zhang; Lili, Tang; Lin, Shan; Jing, Gao; Peiling, Ding

    2015-03-01

    In this study, the electroless copper plating method was applied to deposit a Cu coating on SiCp in order to improve interface bonding performance. The SiCp surface morphology with uncoated and coated copper was investigated. The SiCp/Cu composite was fabricated by the hot-pressed sintering technology. SiC particles with various contents were used as reinforcement. The results showed that the distribution of reinforced particle with electroless plating copper coating was uniform in the copper matrix. The SiCp content played had an important role on thermal expansion coefficient and wear properties behaviors of the SiCp/Cu composites. The wear resistance capacity and thermal expansion coefficient of the composites decreased with increasing amount of SiC. Compared with the pure Cu matrix, the obtained SiCp/Cu composites had better capacity of the wear resistance. The SiCp/Cu composites increased when compared with the pure Cu material.

  17. High-Performance a-Si/c-Si Heterojunction Photoelectrodes for Photoelectrochemical Oxygen and Hydrogen Evolution.

    PubMed

    Wang, Hsin-Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng-Lin; Huang, Ming-Yi; Wang, Deli; He, Jr-Hau

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm(2) at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. PMID:25665138

  18. Iron disilicide formation by Au-Si eutectic reaction on Si substrate

    NASA Astrophysics Data System (ADS)

    Akiyama, Kensuke; Kaneko, Satoru; Yokomizo, Kazuya; Itakura, Masaru

    2009-11-01

    We have investigated the growth of iron disilicide on Au-coated Si(0 0 1) substrates and its photoluminescence behaviour. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy observations revealed that the Si surface above 380 °C was melted as a result of the Au-Si eutectic reaction and that coarse island disilicide grains with sizes of several micrometres were formed on the Si surface. The full width at half maximum of 0.056° on the rocking curve of α-FeSi 2004 was observed on the sample deposited at 800 °C, and indicated the high crystal quality in perfection of orientation. The photoluminescence spectrum of β-FeSi 2 grains, which were deposited at 750 °C, was observed. The melted Si surface contributed to the improved crystallinity of α-FeSi 2 and β-FeSi 2.

  19. Propagation of misfit dislocations from buffer/Si interface into Si

    DOEpatents

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  20. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    NASA Astrophysics Data System (ADS)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  1. Atomic Layer Epitaxy of Si and Ge on Si(100)-(2x1)

    NASA Astrophysics Data System (ADS)

    Veyan, Jean-Francois; Choi, Heesung; Ballard, Joshua; McDonnell, Stephen; Kirk, Willey P.; Wallace, Robert M.; Randall, John; Cho, Kyeongjae; Chabal, Yves J.

    2011-03-01

    Atomic Layer Epitaxy of Si and Ge on Si(100) surface using disilane (Si 2 H6) and digermane (Ge 2 H6) as precursors is a critical step for constructing 3-D nano-structures, and is indispensable for Atomically Precise Manufacturing of new devices such as quantum dots. Using IRAS and STM together with DFT calculations, we show that Si 2 H6 chemisorbs on clean Si(100)-(2x1) via beta-hydride elimination pathway, involving the intermediate states Si-H and Si- Si H2 - Si H3 . Thermal decomposition of the chemisorbed Si 2 H5 leads to the formation of Si 2 H2 as an added dimer rotated 90 degrees with respect to the initial dimer row. A similar chemisorption pathway is observed for Ge 2 H6 on Si(100)x(2x1). The thermal decomposition of Ge 2 H5 involves the migration of H from Ge to Si, and Ge ad-dimer formation. Evidence for Ge epitaxial growth on Si(100)x(2x1) using Ge 2 H6 will be presented.

  2. Facet engineering for SiGe/Si stressors in advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Kasim, Johnson; Reichel, Carsten; Dilliway, Gabriela; Bai, Bo; Zakowsky, Nadja

    2015-08-01

    A two-layer SiGe stressor was introduced for our CMOS technology containing a bottom layer with high Ge content to induce more stress to the channel and a top layer with lower Ge content for better nickel silicidation. However, even with the top lower Ge layer, defects were found after silicidation causing contact punch through. Since it is well known that the silicidation improves for Si, the SiGe top layer was replaced by a Si layer (Si-cap). Evaluation on 750 °C and 850 °C grown Si-cap was done. Different temperature grown Si-caps showed different growth behavior with morphology of the Si-cap grown at 850 °C completely different than that of the Si cap grown at 750 °C. There was a clear {3 1 1} facet formation for the higher temperature Si-cap resulting in a pinning effect to the spacer edge similar to that observed for the SiGe-cap. The faceted Si-cap improved silicidation and device parameters enabling the extension of this integration approach for SiGe/Si stressors to the more advanced technology nodes.

  3. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  4. Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices

    NASA Astrophysics Data System (ADS)

    Zelenina, A.; Sarikov, A.; Gutsch, S.; Zakharov, N.; Werner, P.; Reichert, A.; Weiss, C.; Zacharias, M.

    2015-05-01

    Silicon nanocrystals formed in the annealed SiNx/Si3N4 superlattices are attractive for research due to the smaller band offsets of Si3N4 matrix to Si in comparison with commonly used SiOx/SiO2 superlattices. However, the annealed SiNx/Si3N4 structures contain an increased number of nanocrystal interface defects, which completely suppress nanocrystal emission spectrum. In this work, we study a novel SiOxNy/Si3N4 hetero multilayer combination, which compromises the major issues of SiOx/SiO2 and SiNx/Si3N4 superlattices. The annealed SiOxNy/Si3N4 superlattices are investigated by TEM, demonstrating a precise sublayer thicknesses control. The PL spectra of the annealed SiOxNy/Si3N4 superlattices are centered at 845-950 nm with an expected PL peak shift for silicon nanocrystals of different sizes albeit the PL intensity is drastically reduced as compared to SiO2 separation barriers. The comparison of PL spectra of annealed SiOxNy/Si3N4 superlattice with those of SiOxNy/SiO2 superlattice enables the analysis of the interface quality of silicon nanocrystals. Using the literature data, the number of the interface defects and their distribution on the nanocrystal facets are estimated. Finally, it is shown that the increase of the Si3N4 barrier thickness leads to the increased energy transfer from the Si nanocrystals into the Si3N4 matrix, which explains an additional drop of the nanocrystal PL intensity.

  5. Solution plasma synthesis of Si nanoparticles.

    PubMed

    Saito, Genki; Sakaguchi, Norihito

    2015-06-12

    Silicon nanoparticles (Si-NPs) were directly synthesized from a Si bar electrode via a solution plasma. In order to produce smaller Si-NPs, the effects of different electrolytes and applied voltages on the product were investigated in the experiments detailed in this paper. The results demonstrated that the use of an acidic solution of 0.1 M HCl or HNO3 produced Si-NPs without SiO2 formation. According to the transmission electron microscopy and electron energy-loss spectroscopy, the obtained Si-NPs contained both amorphous and polycrystalline Si particles, among which the smaller Si-NPs tended to be amorphous. When an alkaline solution of K2CO3 was used instead, amorphous SiO2 particles were synthesized owing to the corrosion of Si in the high-temperature environment. The pH values of KCl and KNO3 increased during electrolysis, and the products were partially oxidized in the alkaline solutions. The particle size increased with an increasing applied voltage because the excitation temperature of the plasma increased. PMID:25990371

  6. Solution plasma synthesis of Si nanoparticles

    NASA Astrophysics Data System (ADS)

    Saito, Genki; Sakaguchi, Norihito

    2015-06-01

    Silicon nanoparticles (Si-NPs) were directly synthesized from a Si bar electrode via a solution plasma. In order to produce smaller Si-NPs, the effects of different electrolytes and applied voltages on the product were investigated in the experiments detailed in this paper. The results demonstrated that the use of an acidic solution of 0.1 M HCl or HNO3 produced Si-NPs without SiO2 formation. According to the transmission electron microscopy and electron energy-loss spectroscopy, the obtained Si-NPs contained both amorphous and polycrystalline Si particles, among which the smaller Si-NPs tended to be amorphous. When an alkaline solution of K2CO3 was used instead, amorphous SiO2 particles were synthesized owing to the corrosion of Si in the high-temperature environment. The pH values of KCl and KNO3 increased during electrolysis, and the products were partially oxidized in the alkaline solutions. The particle size increased with an increasing applied voltage because the excitation temperature of the plasma increased.

  7. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  8. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

    SciTech Connect

    Rani, Ekta; Ingale, Alka A.; Chaturvedi, A.; Joshi, M. P.; Kukreja, L. M.

    2015-10-19

    Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.

  9. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2013-08-06

    The use of SiC composites in fusion environments likely requires joining of plates using reactive joining or brazing. One promising reactive joining method uses solid-state displacement reactions between Si and TiC to produce Ti3SiC2 + SiC. We continue to explore the processing envelope for this joint for the TITAN collaboration in order to produce optimal joints to undergo irradiation studies in HFIR. One noted feature of the joints produced using tape-calendared powders of TiC+Si has been the large void regions that have been apparently unavoidable. Although the produced joints are very strong, these voids are undesirable. In addition, the tapes that were made for this joining were produced about 20 years ago and were aging. Therefore, we embarked on an effort to produce some new tape cast powders of TiC and Si that could replace our aging tape calendared materials.

  10. Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi

    2016-09-01

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm-3 eV-1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

  11. SI PC104 Performance Test Report

    SciTech Connect

    Montelongo, S

    2005-12-16

    The Spectral Instruments (SI) PC104 systems associated with the SI-1000 CCD camera exhibited intermittent power problems during setup, test and operations which called for further evaluation and testing. The SI PC104 System is the interface between the SI-1000 CCD camera and its associated Diagnostic Controller (DC). As such, the SI PC104 must be a reliable, robust system capable of providing consistent performance in various configurations and operating conditions. This SI PC104 system consists of a stackable set of modules designed to meet the PC104+ Industry Standard. The SI PC104 System consists of a CPU module, SI Camera card, Media converter card, Video card and a I/O module. The root cause of power problems was identified as failing solder joints at the LEMO power connector attached to the SI Camera Card. The recommended solution was to provide power to the PC104 system via a PC104+ power supply module configured into the PC104 stack instead of thru the LEMO power connector. Test plans (2) were developed to test SI PC104 performance and identify any outstanding issues noted during extended operations. Test Plan 1 included performance and image acquisition tests. Test Plan 2 verified performance after implementing recommendations. Test Plan 2 also included verifying integrity of system files and driver installation after bootup. Each test plan was implemented to fully test against each set of problems noted. Test Plan presentations and Test Plan results are attached as appendices. Anticipated test results will show successful operation and reliable performance of the SI PC104 system receiving its power via a PC104 power supply module. A SI PC104 Usage Recommendation Memo will be sent out to the SI PC104 User Community. Recommendation memo(s) are attached as appendices.

  12. Mechanical Behavior of Notched SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Gyekenyesi, John Z.; Gyekenyesi, Andrew L.; Levine, Stanley (Technical Monitor)

    2001-01-01

    Gas turbine components such as combustor liners or turbine vanes are subject to regions of high stress-concentration, e.g., attachment to the frame or at cooling holes. Ceramic matrix composites (CMCs) are potential materials for high temperature applications in gas turbines. They offer some capability to relieve stress at regions of high stress-concentration via matrix damage accumulation. In this study notch sensitivity was examined for woven SiC fiber reinforced, melt-infiltrated SiC matrix composites with a BN interphase, utilizing either Hi-Nicalo(TM) fibers or the stiffer Sylramic fibers. The double-edge notched tensile test approach was used for a wide range of notch sizes and specimen widths. Both composite systems exhibited mild notch sensitivity similar to other CMC systems. Acoustic emission, detected during the tensile tests, indicated that matrix cracking occurred around notches at net-section stresses below the stress where matrix cracking first occurs in unnotched specimens. However, thermoelastic stress analysis did not show any measurable stress relief around notches after the specimens were preloaded.

  13. Oxidation Embrittlement Observed in SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Verrilli, Michael J.

    1997-01-01

    As part of a comprehensive materials characterization program at the NASA Lewis Research Center, tensile creep-rupture tests were performed on a SiC-fiber-reinforced SiC-matrix composite. The results of these tests and subsequent analysis revealed an oxidation embrittlement phenomena that occurs readily at a discreet temperature range below the maximum use temperature. The graph shows rupture lives for a creep stress of 83 MPa as a function of temperature. Note that the rupture time is constant at an intermediate temperature range of 700 to 982 C. This graph also shows the failure location, as measured from the center of the specimen. Whereas for temperatures of 500 to 700 C, failure occurred in the specimen gage section; at higher temperatures, the failure location migrated toward the cooled grip ends. Although the results initially suggested that the test procedure was influencing the measured creep rupture lives and driving the failure location out of the gage section, subsequent experiments and thermal stress analyses verified the robustness of the test method employed.

  14. Modelling the influence of high currents on the cutoff frequency in Si/SiGe/Si heterojunction transistors

    NASA Astrophysics Data System (ADS)

    Briggs, P. J.; Walker, A. B.; Herbert, D. C.

    1998-05-01

    A one-dimensional self-consistent bipolar Monte Carlo simulation code has been used to model carrier mobilities in strained doped SiGe and the base-collector region of Si/SiGe/Si and SiC/Si heterojunction bipolar transistors (HBTs) with wide collectors, to study the variation of the cutoff frequency 0268-1242/13/5/005/img6 with collector current density 0268-1242/13/5/005/img7. Our results show that while the presence of strain enhances the electron mobility, the scattering from alloy disorder and from ionized impurities reduces the electron mobility so much that it is less than that of Si at the same doping level, leading to larger base transit times 0268-1242/13/5/005/img8 and hence poorer 0268-1242/13/5/005/img6 performance for large 0268-1242/13/5/005/img7 for an Si/SiGe/Si HBT than for an SiC/Si HBT. At high values of 0268-1242/13/5/005/img7, we demonstrate the formation of a parasitic electron barrier at the base-collector interface which causes a sharp increase in 0268-1242/13/5/005/img8 and hence a dramatic reduction in 0268-1242/13/5/005/img6. Based on a comparison of the height of this parasitic barrier with estimates from an analytical model, we suggest a physical mechanism for base pushout after barrier formation that differs somewhat from that given for the analytical model.

  15. Thoughts on a changing SI

    NASA Astrophysics Data System (ADS)

    Cabiati, Franco; Bich, Walter

    2009-10-01

    The trend towards an International System of Units (SI) based on fundamental constants has been confirmed and recent actions could result in the redefinition of the four units still necessary to cover all the quantities of interest for physics and chemistry. In this paper some issues whose solution is becoming critical with the approach of the General Conference on Weights and Measures (CGPM) of 2011 are discussed. The traditional kinds of definition and the new proposals are considered on the basis of their mathematical expressions and the advantageous features of the most advanced proposal are pointed out. The problem of choosing the set of fundamental constants to be adopted as reference quantities for the SI units is addressed and a general rule for verifying that the set is sufficient and non-redundant is pointed out in the form of a linear system giving also expressions of all the units as functions of the reference constants. A partial application to the most important units and different sets of constants offers some comparative criteria and shows the advantages of a set including both h and me. A general condition to be fulfilled by an experiment in order to realize an SI unit is given and a procedure suitable to optimize the availability of the best relization on a global basis is outlined. Finally, the dissemination process is analysed to show that the implied comparisons of standards at any level are not affected by the realization uncertainty, so that the process can be continued with the same standards, independently of any change in the basic reference quantities of the unit system.

  16. Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Goto, Akihiro; Kamada, Daiki; Hamaoka, Yoshinori; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2009-11-01

    Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity elements in MG-Si. The prepared Si films clearly had fewer typical metal impurities (Fe, Al, Ti, Cr, Mn, etc.) than those in the MG-Si. In particular, the Fe concentration was drastically reduced from 6900 mass ppm to less than 0.1 mass ppm by one time chemical transport. Furthermore, metal impurity concentrations were further reduced by repeating chemical transport deposition.

  17. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  18. Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

    SciTech Connect

    Melnikov, M. Yu. Shashkin, A. A.; Dolgopolov, V. T.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.

    2015-03-02

    We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m{sup 2}/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al{sub 2}O{sub 3}, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

  19. Evolution of surface stress during oxygen exposure of clean Si(111), Si(100), and amorphous Si surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-14

    The evolutions of the surface stress of Si(111)-7 × 7, Si(100)-2 × 1, and a-Si surfaces upon oxygen exposure at pO{sub 2} = 1 × 10{sup −4} Pa and room temperature have been investigated in a comparative manner using a specimen-curvature based technique. To this end, a generally applicable, dedicated set of experiments has been devised and performed to deduce and correct for the surface stress change owing to oxygen reaction(s) at the (poorly-defined) back face of the specimen only. On this basis, it could be demonstrated that exposure of clean Si(111)-7 × 7, Si(100)-2 × 1 and a-Si surfaces to pure oxygen gas results in compressive surface stress changes for all three surfaces due to the incorporation of oxygen into Si backbonds. The measured surface stress change decreases with decreasing atomic packing density at the clean Si surfaces, which complies well with the less-densily packed Si surface regions containing more free volume for the accommodation of adsorbed O atoms.

  20. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    SciTech Connect

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  1. Interaction of metal layers with polycrystalline Si

    NASA Technical Reports Server (NTRS)

    Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

    1976-01-01

    Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

  2. First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction

    NASA Astrophysics Data System (ADS)

    He, Xiao-Min; Chen, Zhi-Ming; Huang, Lei; Li, Lian-Bi

    2015-10-01

    Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)//6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)//6H-SiC(0001) heterojunction are Si[2-1-1]/6H-SiC[101¯0] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

  3. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures.

    PubMed

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-12-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect. PMID:27255897

  4. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures

    NASA Astrophysics Data System (ADS)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-06-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree ( ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  5. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    SciTech Connect

    Wilson, Dane F.

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  6. SiLix-C Nanocomposites

    NASA Technical Reports Server (NTRS)

    Henry, Francois

    2015-01-01

    For this Phase II project, Superior Graphite Co., in collaboration with the Georgia Institute of Technology and Streamline Nanotechnologies, Inc., developed, explored the properties of, and demonstrated the enhanced capabilities of novel nanostructured SiLix-C anodes. These anodes can retain high capacity at a rapid 2-hour discharge rate and at 0 C when used in Li-ion batteries. In Phase I, these advanced anode materials had specific capacity in excess of 1,000 mAh/g, minimal irreversible capacity losses, and stable performance for 20 cycles at C/1. The goals in Phase II were to develop and apply a variety of novel nanomaterials, fine-tune the properties of composite particles at the nanoscale, optimize the composition of the anodes, and select appropriate binder and electrolytes. In order to achieve a breakthrough in power characteristics of Li-ion batteries, the team developed new nanostructured SiLix-C anode materials to offer up to 1,200 mAh/g at C/2 at 0 C.

  7. Effective charge on silicon atom in the metal silicides Mg{sub 2}Si and CaSi

    SciTech Connect

    Ishii, Hideshi; Karimov, Pavel; Kawai, Jun; Matsuo, Shuji; Tanaka, Koki

    2005-05-15

    The effective charges of Si in both magnesium (Mg{sub 2}Si) and calcium silicides (CaSi and Ca{sub 2}Si) have been investigated by measuring high-resolution Si K{alpha} x-ray fluorescence spectra. CaSi showed small but positive chemical shifts (+0.03 eV), while the chemical shift of Mg{sub 2}Si was negative (-0.14 eV), as expected from their electronegativity (Ca: 1.00; Mg: 1.31; Si: 1.90). The similarity of the chemical shift for the Fe silicides and the calculations for the free single Si atom suggested that the effective charge of Si for CaSi was positive. From the observations the effective charges on Si in CaSi and Mg{sub 2}Si were estimated to be +0.1 and -0.3 electrons. The discrete variation Hatree-Fock-Slater calculations for Mg{sub 2}Si and CaSi also showed opposite chemical shifts and effective charges: -0.09 eV and -0.35 electrons for Mg{sub 2}Si and +0.09 eV and +0.26 electrons for CaSi, respectively. The composition of the nearest-neighbor atoms of Si, which are Si in CaSi and Mg in Mg{sub 2}Si, cause the opposite effective charges between the two silicides.

  8. Lattice-matching of Si grown on 6H-SiC(000-1) C-face

    NASA Astrophysics Data System (ADS)

    Li, L. B.; Chen, Z. M.; Xie, L. F.; Yang, C.

    2014-01-01

    Si films with <111> preferred orientation have been prepared on 6H-SiC(000-1) C-face. HRTEM and SAED results indicate that the Si film has epitaxial connection with the 6H-SiC substrate and the parallel-plane relationship of the Si/6H-SiC heterostructure is (111)Si//(000-1)6H-SiC. Using fast Fourier transform and Fourier mask filtering technique, misfit dislocations are clearly observed at the Si/6H-SiC interface, which accommodate the most of lattice mismatch strain. Every four Si (111) lattice planes are registered with five 6H-SiC(000-1) lattice planes along the interface. Based on the 4:5 lattice matching mode, the lattice structure of the Si/6H-SiC interface and its stability were energetically investigated by molecular dynamics simulations. When the Si films grow preferentially along <111> orientation on 6H-SiC(000-1) C-face, the misfit strain in Si layer significantly reduces due to the relaxation of C atoms in SiC layer near the Si/6H-SiC interface, and thus the Si/6H-SiC heterostructure has a stable interface with a small interface formation energy of -14.24 eV.

  9. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  10. Advances in Systemic siRNA Delivery

    PubMed Central

    Leng, Qixin; Woodle, Martin C; Lu, Patrick Y; Mixson, A James

    2009-01-01

    Sequence-specific gene silencing with small interfering RNA (siRNA) has transformed basic science research, and the efficacy of siRNA therapeutics toward a variety of diseases is now being evaluated in pre-clinical and clinical trials. Despite its potential value, the highly negatively charged siRNA has the classic delivery problem of requiring transport across cell membranes to the cytosol. Consequently, carrier development for siRNA delivery is one of the most important problems to solve before siRNA can achieve widespread clinical use. An assortment of non-viral carriers including liposomes, peptides, polymers, and aptamers are being evaluated for their ability to shepherd siRNA to the target tissue and cross the plasma membrane barrier into the cell. Several promising carriers with low toxicity and increased specificity for disease targets have emerged for siRNA-based therapeutics. This review will discuss non-viral approaches for siRNA therapeutics, with particular focus on synthetic carriers for in vivo systemic delivery of siRNA. PMID:20161621

  11. SiD Letter of Intent

    SciTech Connect

    Aihara, H.,; Burrows, P.,; Oreglia, M.,; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  12. Si isotope homogeneity of the solar nebula

    SciTech Connect

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric; Jackson, Matthew G.; Barrat, Jean-Alix E-mail: savage@levee.wustl.edu E-mail: moynier@ipgp.fr E-mail: Jean-Alix.Barrat@univ-brest.fr

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  13. SiC-Based Gas Sensor Development

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Gray, M.; Androjna, D.; Chen, L.-Y.; Hoffman, R. W., Jr.; Liu, C. C.; Wu, Q. H.

    2000-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

  14. Generation of pyridyl coordinated organosilicon cation pool by oxidative Si-Si bond dissociation

    PubMed Central

    Nokami, Toshiki; Soma, Ryoji; Yamamoto, Yoshimasa; Kamei, Toshiyuki; Itami, Kenichiro; Yoshida, Jun-ichi

    2007-01-01

    An organosilicon cation stabilized by intramolecular pyridyl coordination was effectively generated and accumulated by oxidative Si-Si bond dissociation of the corresponding disilane using low temperature electrolysis, and was characterized by NMR and CSI-MS. PMID:17288603

  15. Generation of pyridyl coordinated organosilicon cation pool by oxidative Si-Si bond dissociation.

    PubMed

    Nokami, Toshiki; Soma, Ryoji; Yamamoto, Yoshimasa; Kamei, Toshiyuki; Itami, Kenichiro; Yoshida, Jun-Ichi

    2007-01-01

    An organosilicon cation stabilized by intramolecular pyridyl coordination was effectively generated and accumulated by oxidative Si-Si bond dissociation of the corresponding disilane using low temperature electrolysis, and was characterized by NMR and CSI-MS. PMID:17288603

  16. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    PubMed Central

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  17. Recycling of Al-Si die casting scraps for solar Si feedstock

    NASA Astrophysics Data System (ADS)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  18. Hyaluronic acid-siRNA conjugate/reducible polyethylenimine complexes for targeted siRNA delivery.

    PubMed

    Jang, Yeon Lim; Ku, Sook Hee; Jin, So; Park, Jae Hyung; Kim, Won Jong; Kwon, Ick Chan; Kim, Sun Hwa; Jeong, Ji Hoon

    2014-10-01

    The clinical applications of therapeutic siRNA remain as a challenge due to the lack of efficient delivery system. In the present study, hyaluronic acid-siRNA conjugate (HA-SS-siRNA)/reducible polyethylenimine (BPEI1.2k-SS) complexes were developed to efficiently deliver the siRNA to HA receptor abundant region with the improved siRNA stability. HA and siRNA were conjugated with disulfide bonds, which are cleavable in cytoplasm. The synthesized HA-SS-siRNA was further complexed with BPEI1.2k-SS, resulting in the formation of spherical nanostructures with approximately 190 nm of size and neutral surface charge. HA-SS-siRNA/BPEI1.2k-SS complexes exhibited the improved stability against serum proteins or polyanions. These complexes were successfully translocated into intracellular region via HA receptor-mediated endocytosis, and silenced target gene expression. PMID:25942799

  19. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

    SciTech Connect

    Ma Ming; Xue Qingzhong; Chen Huijuan; Zhou Xiaoyan; Xia Dan; Lv Cheng; Xie Jie

    2010-08-09

    The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

  20. Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

    SciTech Connect

    Ogawa, Shuichi Tang, Jiayi; Takakuwa, Yuji

    2015-08-15

    Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at S{sub B} steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.

  1. Characterization of SiC-SiC composites for accident tolerant fuel cladding

    NASA Astrophysics Data System (ADS)

    Deck, C. P.; Jacobsen, G. M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H. E.; Back, C. A.

    2015-11-01

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC-SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC-SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  2. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.

    PubMed

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-01-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers. PMID:26601894

  3. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    NASA Astrophysics Data System (ADS)

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-11-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.

  4. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    SciTech Connect

    Windisch, C.F. Jr.; Jones, R.H.; Snead, L.L.

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  5. Fabrication and measurement of quantum dots in double gated, dopantless Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Ward, Daniel; Mohr, Robert; Prance, Jonathan; Gamble, John; Savage, Don; Lagally, Max; Coppersmith, Susan; Eriksson, Mark

    2012-02-01

    Significant progress has been made towards quantum dot spin qubits in Si/SiGe single and double quantum dots. In the past, these structures have been created by depleting a modulation-doped 2DEG that forms at the Si/SiGe interface. The modulation doping in such devices is believed to be a source of charge noise. Recently, undoped structures have been explored for the formation of both 2DEGs and quantum dots in Si/SiGe. Here we discuss measurements on double gated, dopantless quantum dots in Si/SiGe heterostructures. The devices are based on a new ``island mesa'' design incorporating micro-ohmic contacts. We present transport measurements on a double quantum dot showing a smooth transition from single dot to double dot behavior.

  6. 'Buffer-layer' technique for the growth of single crystal SiC on Si

    NASA Astrophysics Data System (ADS)

    Addamiano, A.; Sprague, J. A.

    1984-03-01

    The nature of the buffer layers needed for the single-crystal deposition of cubic SiC on Si substrates has been studied. The preparation of chemically formed surface layers of SiC on (100) Si wafers is described. The reaction-grown films of SiC were examined by reflection high-energy electron diffraction using an incident electron energy of 200 keV and by SEM using incident electron energies of 20 and 200 keV. It is concluded that the buffer layer obtained at about 1400 C is a stressed monocrystalline layer of cubic SiC whose crystals contain considerable imperfections. The stresses are due to quenching to room temperature because of the large difference between the thermal expansion coefficients of Si and SiC.

  7. Nanoscale structure of Si/SiO2/organics interfaces.

    PubMed

    Steinrück, Hans-Georg; Schiener, Andreas; Schindler, Torben; Will, Johannes; Magerl, Andreas; Konovalov, Oleg; Li Destri, Giovanni; Seeck, Oliver H; Mezger, Markus; Haddad, Julia; Deutsch, Moshe; Checco, Antonio; Ocko, Benjamin M

    2014-12-23

    X-ray reflectivity measurements of increasingly more complex interfaces involving silicon (001) substrates reveal the existence of a thin low-density layer intruding between the single-crystalline silicon and the amorphous native SiO2 terminating it. The importance of accounting for this layer in modeling silicon/liquid interfaces and silicon-supported monolayers is demonstrated by comparing fits of the measured reflectivity curves by models including and excluding this layer. The inclusion of this layer, with 6-8 missing electrons per silicon unit cell area, consistent with one missing oxygen atom whose bonds remain hydrogen passivated, is found to be particularly important for an accurate and high-resolution determination of the surface normal density profile from reflectivities spanning extended momentum transfer ranges, now measurable at modern third-generation synchrotron sources. PMID:25401294

  8. Room Temperature Creep Of SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Gyekenyesi, Andrew; Levine, Stanley (Technical Monitor)

    2001-01-01

    During a recent experimental study, time dependent deformation was observed for a damaged Hi-Nicalon reinforced, BN interphase, chemically vapor infiltrated SiC matrix composites subjected to static loading at room temperature. The static load curves resembled primary creep curves. In addition, acoustic emission was monitored during the test and significant AE activity was recorded while maintaining a constant load, which suggested matrix cracking or interfacial sliding. For similar composites with carbon interphases, little or no time dependent deformation was observed. Evidently, exposure of the BN interphase to the ambient environment resulted in a reduction in the interfacial mechanical properties, i.e. interfacial shear strength and/or debond energy. These results were in qualitative agreement with observations made by Eldridge of a reduction in interfacial shear stress with time at room temperature as measured by fiber push-in experiments.

  9. Effects of nitrogen and fluorine on the Si/SiO(2) interface

    NASA Astrophysics Data System (ADS)

    Dugan, Brian Michael

    Several fundamental properties of the nitrided and/or fluorinated (100) Si/SiOsb2 interface are investigated. Nitridation of SiOsb2 by Nsb2O annealing is extended to thick oxides and is shown to result in strain relaxation at the Si/SiOsb2 interface which manifests itself in a reduction in the gate-size dependence of radiation damage. In addition to suppressing boron diffusion, Nsb2O nitrided oxides suppress hydrogen diffusion to the Si/SiOsb2 interface as these oxides exhibit significantly less latent generation of interface traps than pure SiOsb2. The considerable improvement in oxide reliability observed for Nsb2O nitrided oxides is attributed to both strain relaxation and hydrogen diffusion suppression. The interface-trap transformation process (ITTP) is found to be qualitatively similar for pure SiOsb2, nitrided SiOsb2, and nitrided/fluorinated SiOsb2 devices despite the apparent ability of nitrided oxides to suppress hydrogen diffusion. This similarity contradicts a water diffusion ITTP model, and supports an ITTP model based upon occupancy-driven changes in the bonding configurations of Pb centers which are unaltered by either fluorination or nitridation. Despite dramatically impacting oxide reliability, interfacial strain, and diffusion barrier properties, neither nitridation nor fluorination alters the electrical signature of Psb{b0}/Psb{b1} centers at the Si/SiOsb2 interface. The time evolution of a.c. conductance data for damaged nitrided and nitrided/fluorinated (100) n-type Si MOS capacitors suggests a second ITTP, possibly a Psb{b0}/Psb{b1} exchange. A novel NFsb3 annealing process for incorporating F at the Nsb2O nitrided Si/SiOsb2 interface produces a nitrided/fluorinated oxide with significantly improved oxide reliability characteristics compared to pure SiOsb2, but slightly less reliable than nitrided SiOsb2 without F. Accompanying the fluorination of nitrided SiOsb2 is a decrease in fast and slow interface traps. Water-vapor annealing is shown to

  10. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

    SciTech Connect

    Mala, S. A.; Tsybeskov, L.; Lockwood, D. J.; Wu, X.; Baribeau, J.-M.

    2014-07-07

    We present a quantitative analysis of Raman scattering in various Si/Si{sub 1-x}Ge{sub x} multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

  11. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 {times} 6 {times} 2 mm{sup 3} with a span-to-depth ratio of 10/1.

  12. Effect of irradiation on thermal expansion of SiC{sub f}/SiC composites

    SciTech Connect

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC{sub f}/SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) {beta}-SiC at all temperatures.

  13. Electrophysical properties of Si/SiO2 nanostructures fabricated by direct bonding

    NASA Astrophysics Data System (ADS)

    Gismatulin, A. A.; Kamaev, G. N.

    2016-06-01

    The results of experimental investigation of diode n ++- p ++-Si structures, which were fabricated by direct bonding and have tunneling-thin SiO2 with Si nanoclusters embedded into the interface, are presented. The memristive effect with bipolar switching is demonstrated. The introduction of Si nanoclusters into the dielectric reduces the randomness of formation of a conducting channel. Intermediate metastable states are observed in the current-voltage characteristics. This may prove to be important for multibit data storage.

  14. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

    NASA Astrophysics Data System (ADS)

    Mala, S. A.; Tsybeskov, L.; Lockwood, D. J.; Wu, X.; Baribeau, J.-M.

    2014-07-01

    We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

  15. Vanadium, Cr, Si, and the Mg/Si Ratio of the Earth

    NASA Technical Reports Server (NTRS)

    Drake, Michael J.; Domanik, Kenneth; Bailey, Edward

    2003-01-01

    Experiments investigating the partitioning of V, Cr, and Si between metal and silicate at various pressures, temperatures, redox state, and composition demonstrate that V and Cr are always more siderophile than Si. The relatively high abundances of V and Cr in the Earth's upper mantle indicate that the high Mg/Si ratio of the Earth's upper mantle cannot be attributed to extraction of Si into the core and must be an intrinsic bulk property of the silicate Earth.

  16. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  17. Electronic and atomic structure of thin CoSi2 films on Si(111) and Si(100)

    NASA Astrophysics Data System (ADS)

    Chambliss, D. D.; Rhodin, T. N.; Rowe, J. E.

    1992-01-01

    The electronic and atomic structure of very thin epitaxial cobalt silicide films was studied to provide insight into the initial stages of interface formation. Thin CoSi2 films (3-30 Å) on Si(111) and Si(100) were studied experimentally using angle-resolved photoemission spectroscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy, and computationally using the pseudofunction method of Kasowski for determining the electronic band structure. The experimental and computational results support the models of Hellman and Tung for Co-rich and Si-rich CoSi2(111) surfaces. The surface-state dispersion that we measure for the Co-rich variant agrees with the behavior that we calculate for the Hellman-Tung model. For the Si-rich variant, the essentially bulklike bonding environment of the outermost Co atoms in the Hellman-Tung model agrees with the photoemission results. Preliminary results for thin films of CoSi2 on Si(100) grown by a template technique show clearly a strong dependence of film quality on the annealing temperature and initial Co thickness. A model for surface structure is suggested that accounts for LEED and photoemission results.

  18. About the International System of Units (SI) Part III. SI Table

    ERIC Educational Resources Information Center

    Aubrecht, Gordon J., II; French, Anthony P.; Iona, Mario

    2012-01-01

    Before discussing more details of SI, we will summarize the essentials in a few tables that can serve as ready references. If a unit isn't listed in Tables I-IV, it is not part of SI or specifically allowed for use with SI. The units and symbols that are sufficient for most everyday applications are given in bold.

  19. Further Developments in Modeling Creep Effects Within Structural SiC/SiC Components

    NASA Technical Reports Server (NTRS)

    Lang, Jerry; DiCarlo, James A.

    2008-01-01

    Anticipating the implementation of advanced SiC/SiC composites into turbine section components of future aero-propulsion engines, the primary objective of this on-going study is to develop physics-based analytical and finite-element modeling tools to predict the effects of constituent creep on SiC/SiC component service life. A second objective is to understand how to possibly manipulate constituent materials and processes in order to minimize these effects. Focusing on SiC/SiC components experiencing through-thickness stress gradients (e.g., airfoil leading edge), prior NASA creep modeling studies showed that detrimental residual stress effects can develop globally within the component walls which can increase the risk of matrix cracking. These studies assumed that the SiC/SiC composites behaved as isotropic viscoelastic continuum materials with creep behavior that was linear and symmetric with stress and that the creep parameters could be obtained from creep data as experimentally measured in-plane in the fiber direction of advanced thin-walled 2D SiC/SiC panels. The present study expands on those prior efforts by including constituent behavior with non-linear stress dependencies in order to predict such key creep-related SiC/SiC properties as time-dependent matrix stress, constituent creep and content effects on composite creep rates and rupture times, and stresses on fiber and matrix during and after creep.

  20. Advances in SiC/SiC Composites for Aero-Propulsion

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A.

    2013-01-01

    In the last decade, considerable progress has been made in the development and application of ceramic matrix composites consisting of silicon carbide (SiC) based matrices reinforced by small-diameter continuous-length SiC-based fibers. For example, these SiC/SiC composites are now in the early stages of implementation into hot-section components of civil aero-propulsion gas turbine engines, where in comparison to current metallic components they offer multiple advantages due to their lighter weight and higher temperature structural capability. For current production-ready SiC/SiC, this temperature capability for long time structural applications is 1250 degC, which is better than 1100 degC for the best metallic superalloys. Foreseeing that even higher structural reliability and temperature capability would continue to increase the advantages of SiC/SiC composites, progress in recent years has also been made at NASA toward improving the properties of SiC/SiC composites by optimizing the various constituent materials and geometries within composite microstructures. The primary objective of this chapter is to detail this latter progress, both fundamentally and practically, with particular emphasis on recent advancements in the materials and processes for the fiber, fiber coating, fiber architecture, and matrix, and in the design methods for incorporating these constituents into SiC/SiC microstructures with improved thermo-structural performance.

  1. Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. D.; Grunthaner, F. J.; Kaiser, W. J.

    1988-01-01

    A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

  2. Rutherford backscattering research on the strained SiGe/Si structure

    NASA Astrophysics Data System (ADS)

    Hu, J. H.; Fan, Y. L.; Gong, D. W.; Wang, X.; Zhou, Z. Y.

    1994-12-01

    The ion beam channeling technique has been used to characterize the SiGe/Si structure. It reveals different relative yield between <100> and <110> aligned spectra for strained SiGe layer, silicon buffer layer and silicon substrate which depends on different atomic arrangement.

  3. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    PubMed

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-01

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod. PMID:26818131

  4. Planetary and meteoritic Mg/Si and δ30 Si variations inherited from solar nebula chemistry

    NASA Astrophysics Data System (ADS)

    Dauphas, Nicolas; Poitrasson, Franck; Burkhardt, Christoph; Kobayashi, Hiroshi; Kurosawa, Kosuke

    2015-10-01

    The bulk chemical compositions of planets are uncertain, even for major elements such as Mg and Si. This is due to the fact that the samples available for study all originate from relatively shallow depths. Comparison of the stable isotope compositions of planets and meteorites can help overcome this limitation. Specifically, the non-chondritic Si isotope composition of the Earth's mantle was interpreted to reflect the presence of Si in the core, which can also explain its low density relative to pure Fe-Ni alloy. However, we have found that angrite meteorites display a heavy Si isotope composition similar to the lunar and terrestrial mantles. Because core formation in the angrite parent-body (APB) occurred under oxidizing conditions at relatively low pressure and temperature, significant incorporation of Si in the core is ruled out as an explanation for this heavy Si isotope signature. Instead, we show that equilibrium isotopic fractionation between gaseous SiO and solid forsterite at ∼1370 K in the solar nebula could have produced the observed Si isotope variations. Nebular fractionation of forsterite should be accompanied by correlated variations between the Si isotopic composition and Mg/Si ratio following a slope of ∼1, which is observed in meteorites. Consideration of this nebular process leads to a revised Si concentration in the Earth's core of 3.6 (+ 6.0 / - 3.6) wt% and provides estimates of Mg/Si ratios of bulk planetary bodies.

  5. Scanning capacitance microscope study of a SiO2/Si interface modified by charge injection

    NASA Astrophysics Data System (ADS)

    Tomiye, H.; Yao, T.

    We have investigated the local electrical properties of an SiO2/Si structure using a scanning capacitance microscope (SCaM) combined with an atomic force and a scanning tunneling microscope (AFM and STM). The electrical properties of the Si substrate and the SiO2/Si interface vary with position. In this experiment we have injected charge into the SiO2 and investigated the nature of charge storage at the SiO2/Si interface. We have used the combined microscope to apply a pulse to the SiO2/Si sample, causing charge to be trapped in the SiO2/Si interface. We could clearly detect the local variation of interface charge in a non-destructive manner using the SCaM and simultaneously by capacitance-voltage (C-V) characterization. The volume of the C-V curve shift along the voltage axis due to trapped charges is dependent upon the density of the trapped charges. In doing this experiment we show one of the many possible applications of the combined SCaM/AFM/STM.

  6. Fabrication of nanometer single crystal metallic CoSi2 structures on Si

    NASA Technical Reports Server (NTRS)

    Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

    1991-01-01

    Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

  7. siRNAmod: A database of experimentally validated chemically modified siRNAs

    PubMed Central

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-01

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod. PMID:26818131

  8. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  9. NiSi formation at the silicide/Si interface on the NiPt/Si system

    NASA Astrophysics Data System (ADS)

    Ottaviani, G.; Tu, K. N.; Chu, W. K.; Hung, L. S.; Mayer, J. W.

    1982-07-01

    Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700 °C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350 °C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400- 500 °C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700 °C, the Ni and Pt redistribute to form a uniform ternary.

  10. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    SciTech Connect

    Youngblood, G.E.; Henager, C.H.; Jones, R.H.

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  11. Si infrared pixelless photonic emitter

    NASA Astrophysics Data System (ADS)

    Malyutenko, V. K.; Bogatyrenko, V. V.; Malyutenko, O. Y.; Chyrchyk, S. V.

    2005-09-01

    We report on basic principle and technology of Si high-temperature (T>300K) IR emitter based on all optical down conversion concept. The approach is based on the possibility to modulate semiconductor thermal emission power in the spectral range of intra-band electron transitions through shorter wavelength (inter-band transitions) optical pumping (light down conversion process). Device emission bands are matched to transparency windows in atmosphere (3-5 μm and 8-12 μm) by adjusting thin film coat parameters. The carrier lifetime is responsible for the device time response whereas its maximum power emitted (mW-range) activates with temperature increase. One of the major advantages of devices employing optical "read in" technology is that they are free of contacts and junctions, thus making them ideal for operation at high temperatures.

  12. Hydrogen diffusion on Si(001)

    NASA Astrophysics Data System (ADS)

    Owen, J. H. G.; Bowler, D. R.; Goringe, C. M.; Miki, K.; Briggs, G. A. D.

    1996-11-01

    We have imaged hydrogen on Si(001) at low coverages in a variable-temperature STM from 300 K up to 700 K. Individual hydrogen atoms were imaged which became mobile at around 570 K. The observed rate of hopping along the dimer rows was consistent with an activation energy of 1.68 +/- 0.15 eV. Motion across dimer rows was rarely observed, even at the higher temperatures. The diffusion barrier for motion along the dimer rows has been calculated using tight-binding and density-functional theory in the generalized gradient approximation (GGA). The calculated barrier is 1.65 eV from tight binding and 1.51 eV from GGA.

  13. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  14. LARC-SI Flatwire Twin Conduction Circuits

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Eight 2-line, L-shaped gold flex circuits have been imprinted on 1-mil LARC-SI. Each circuit was embedded in a space-applications trapezoidal truss made of carbon fiber reinforced resin composite (with protruding ends) to facilitate electrical connection of electronic devices mounted on the truss. LARC-SI is an advanced polymer highly suitable for multi layered electrical circuits.

  15. Using Si in floriculture fertility programs

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Silicon (Si) is not considered to be an essential plant nutrient because most plant species can complete their life cycle without it. A clear benefit of Si for many ornamental crops has been reported including improved salt and drought tolerance, especially during post-harvest environments; stronger...

  16. siRNA-Based Therapy Ameliorates Glomerulonephritis

    PubMed Central

    Shimizu, Hideki; Hori, Yuichi; Kaname, Shinya; Yamada, Koei; Nishiyama, Nobuhiro; Matsumoto, Satoru; Miyata, Kanjiro; Oba, Makoto; Yamada, Akira; Kataoka, Kazunori

    2010-01-01

    RNA interference by short interfering RNAs (siRNAs) holds promise as a therapeutic strategy, but use of siRNAs in vivo remains limited. Here, we developed a system to target delivery of siRNAs to glomeruli via poly(ethylene glycol)-poly(l-lysine)-based vehicles. The siRNA/nanocarrier complex was approximately 10 to 20 nm in diameter, a size that would allow it to move across the fenestrated endothelium to access to the mesangium. After intraperitoneal injection of fluorescence-labeled siRNA/nanocarrier complexes, we detected siRNAs in the blood circulation for a prolonged time. Repeated intraperitoneal administration of a mitogen-activated protein kinase 1 (MAPK1) siRNA/nanocarrier complex suppressed glomerular MAPK1 mRNA and protein expression in a mouse model of glomerulonephritis; this improved kidney function, reduced proteinuria, and ameliorated glomerular sclerosis. Furthermore, this therapy reduced the expression of the profibrotic markers TGF-β1, plasminogen activator inhibitor-1, and fibronectin. In conclusion, we successfully silenced intraglomerular genes with siRNA using nanocarriers. This technique could aid the investigation of molecular mechanisms of renal disease and has potential as a molecular therapy of glomerular diseases. PMID:20203158

  17. Reactive sintering of SiC

    NASA Technical Reports Server (NTRS)

    Kim, Y. W.; Lee, J. G.

    1984-01-01

    Investigation of the sintering processes involved in the sintering of SiC revealed a connection between the types and quantities of sintering additives or catalysts and densification, initial shrinkage, and weight loss of the sintered SiC material. By sintering processes, is meant the methods of mass transport, namely solid vapor transport and grain boundary diffusion.

  18. Investigation of Charge Trapping in a SiO2/Si System with a Scanning Capacitance Microscope

    NASA Astrophysics Data System (ADS)

    Tomiye, Hideto; Yao, Takafumi

    1998-06-01

    The local electrical properties of a SiO2/Si structure is investigated using a scanning capacitance microscope (SCaM). The sample investigated in this study was p-type Si with a 10-nm-thick thermal oxide layer. The capacitance measurement reveals the local variation of capacitance, which reflects the electrical properties of the Si substrate, SiO2/Si interface and SiO2 layer. We have injected charge into the SiO2/Si sample. The localvariation and time evolution of the stored charge is clearly detected in a nondestructive manner by the SCaM.

  19. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGESBeta

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  20. High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

  1. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect

    Mäkinen, A. J. Kim, Chul-Soo; Kushto, G. P.

    2014-01-27

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  2. Delivery materials for siRNA therapeutics

    NASA Astrophysics Data System (ADS)

    Kanasty, Rosemary; Dorkin, Joseph Robert; Vegas, Arturo; Anderson, Daniel

    2013-11-01

    RNA interference (RNAi) has broad potential as a therapeutic to reversibly silence any gene. To achieve the clinical potential of RNAi, delivery materials are required to transport short interfering RNA (siRNA) to the site of action in the cells of target tissues. This Review provides an introduction to the biological challenges that siRNA delivery materials aim to overcome, as well as a discussion of the way that the most effective and clinically advanced classes of siRNA delivery systems, including lipid nanoparticles and siRNA conjugates, are designed to surmount these challenges. The systems that we discuss are diverse in their approaches to the delivery problem, and provide valuable insight to guide the design of future siRNA delivery materials.

  3. NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Pagès, Xavier; Vanormelingen, Koen; Smits, Martin; Granneman, Ernst; Fujisawa, Masahiko; Hattori, Nobuyoshi

    2015-04-01

    Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) ∥ Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) ∥ Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) ∥ Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

  4. Dislocation dynamics in SiGe alloys

    NASA Astrophysics Data System (ADS)

    Yonenaga, I.

    2013-11-01

    The dislocation velocities and mechanical strength of bulk crystals of SixGe1-x alloys grown by the Czochralski method have been investigated by the etch pit technique and compressive deformation tests, respectively. Velocity of dislocations in the SiGe alloys of the composition range 0.004 < x < 0.08 decreases monotonically with an increase in Si content at temperature 450-700°C and under stress 3-24MPa. In contrast, velocity of dislocations in the composition range 0.92 < x < 1 first increases, then decreases and again increases with a decrease in Si content at temperature 750-850°C and under stress 3-30MPa. The velocity of dislocations was quantitatively evaluated as functions of stress and temperature. Stress-strain behaviour in the yield region of the SiGe alloys of composition 0 < x < 0.4 is similar to that of Ge at temperatures lower than about 600°C. However, the yield stress becomes temperature-insensitive at high temperatures and increases with increasing Si content. The stress-strain curves of the SiGe alloys of composition 0.95 < x < 1 are similar to those of pure Si at temperatures 800-1000°C and the yield stress increases with decreasing Si content down to x = 0.95. The yield stress of the SiGe alloys is dependent on the composition, being proportional to x(1-x), showing a maximum around x ≈ 0.5. Built-in stress fields related to local fluctuation of the alloy composition and the dynamic development of a solute atmosphere around the dislocations, may suppress the activities of dislocations and lead to the hardening of SiGe alloys.

  5. Role of hydrogen in SiH{sub 2} adsorption on Si(100)

    SciTech Connect

    Hong, S.; Chou, M.Y.

    1998-11-01

    When disilane (Si{sub 2}H{sub 6}) is used in the homoepitaxial growth of Si by chemical vapor deposition (CVD), the fragment SiH{sub 2} is believed to be the basic unit adsorbed on the surface. The bonding site of SiH{sub 2} on Si(100) has been proposed in the literature to be either on top of a dimer (the on-dimer site) or between two dimers in the same row (the intrarow site). Since the pathway of SiH{sub 2} combination is dependent on the adsorption site, a first-principles calculation will shed light on the underlying process. We have performed self-consistent pseudopotential density-functional calculations within the local-density approximation. On the bare Si(100) surface, the on-dimer site is found to be more stable than the intrarow site, even though the former has unfavorable Si-Si bond angles. This is ascribed to the extra dangling bond created in the latter geometry when the weak dimer {pi} bonds are broken. However, the presence of hydrogen adatoms eliminates this difference and makes the intrarow site more favorable than the on-dimer site. It is therefore revealed in this theoretical study that hydrogen, an impurity unavoidable in the CVD process, plays an important role in determining the stable configuration of adsorbed SiH{sub 2} on Si(100) and hence affects the growth mechanism. {copyright} {ital 1998} {ital The American Physical Society}

  6. Nanoscale SiC production by ballistic ion beam mixing of C/Si multilayer structures

    NASA Astrophysics Data System (ADS)

    Battistig, G.; Zolnai, Z.; Németh, A.; Panjan, P.; Menyhárd, M.

    2016-05-01

    The ion beam-induced mixing process using Ar+, Ga+, and Xe+ ion irradiation has been used to form SiC rich layers on the nanometer scale at the interfaces of C/Si/C/Si/C multilayer structures. The SiC depth distributions were determined by Auger electron spectroscopy (AES) depth profiling and were compared to the results of analytical models developed for ballistic ion mixing and local thermal spike induced mixing. In addition, the measured SiC depth distributions were correlated to the Si and C mixing profiles simulated by the TRIDYN code which can follow the ballistic ion mixing process as a function of ion fluence. Good agreement has been found between the distributions provided by AES depth profiling and TRIDYN on the assumption that the majority of the Si (C) atoms transported to the neighboring C (Si) layer form the SiC compound. The ion beam mixing process can be successfully described by ballistic atomic transport processes. The results show that SiC production as a function of depth can be predicted, and tailored compound formation on the nanoscale becomes feasible, thus leading to controlled synthesis of protective SiC coatings at room temperature.

  7. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

    PubMed Central

    2013-01-01

    This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range. PMID:23924368

  8. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  9. Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

    NASA Astrophysics Data System (ADS)

    Severino, A.; D'Arrigo, G.; Bongiorno, C.; Scalese, S.; La Via, F.; Foti, G.

    2007-07-01

    The growth of thin cubic silicon carbide (3C-SiC) buffer layers in an horizontal hot-wall chemical vapor deposition reactor, through the carbonization of differently oriented Si surfaces, is presented. A qualitative and quantitative study has been performed on statistical parameters related to voids due to the buffer layer growth on the different substrate orientations emphasizing shape, size, and density as a function of the substrate orientation. Variation in the void parameters can be attributed to the atomic packing density related to the substrate orientations, which were (100) Si, (111) Si, and (110) Si in this study. Scanning electron microscopy and transmission electron microscopy were performed to analyze the surface and the crystalline quality of the 3C-SiC films grown and, eventually, an empirical model for the carbonization of Si surfaces formulated. Large platens characterize the 3C-SiC films with shapes related to the orientations of the substrate. These platens derive from the two-dimensional growth of different SiC islands which enlarge during the process due to the continuous reaction between Si and C atoms. The interior part of platens was characterized by the presence of a pure crystalline material with the presence of small tilts affecting some grains in the 3C-SiC layer in order to relief the stress generated with the substrate.

  10. Nano-SiC/SiC anti-oxidant coating on the surface of graphite

    NASA Astrophysics Data System (ADS)

    Jafari, H.; Ehsani, N.; Khalifeh-Soltani, S. A.; Jalaly, M.

    2013-01-01

    In this research, a dual-layer coating has been used to improve high temperature oxidation resistance of graphite substrate. For first layer, silicon carbide was applied by pack cementation method. Powder pack consisted of Si, SiC and Al2O3 and heat-treated at 1650 °C in an argon atmosphere. SEM and XRD characterizations confirmed formation of SiC diffusion coating with about 500 μm including compositionally gradient of C and Si elements. Electrophoretic deposition (EPD) was used to deposit nano SiC (SiCn) particles as second layer. Thickness of second layer of SiCn in corresponded optimal situation was 50 μm. Samples with single and dual layers were investigated in oxidation test at 1600 °C. Results showed that an extreme increase was occurred in oxidation resistance after application of second layer of nano SiC. Weight loss value for single layer coating of SiC and dual layer coating of SiCn/SiC after oxidation test for 28 h at 1600 °C were 29 wt.% and 2.4 wt.%, respectively.

  11. SiC fiber reinforced reaction-bonded Si3N4 composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.

    1986-01-01

    A technique for fabricating strong and tough SiC fiber reinforced reaction bonded Si3N4 matrix composites (SiC/RBSN) was developed. Using this technique, composites containing approximately 23, 30, and 40 volume fractions of aligned 140 micron diameter, chemically vapor deposited SiC fibers were fabricated. The room temperature physical and mechanical properties were evaluated. The results for composite tensile strength, bend strength, and fracture strain indicate that the composite displays excellent properties when compared with the unreinforced matrix of comparable porosity. The composite stress at which the matrix first cracks and the ultimate composite fracture strength increase with increasing volume fraction of fibers, and the composite fails gracefully. The mechanical property data of this ceramic composite are compared with similar data for unreinforced commercially available Si3N4 materials and for SEP SiC/SiC composites.

  12. SiOx/SiNy multilayers for photovoltaic and photonic applications

    PubMed Central

    2012-01-01

    Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications. PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters). PMID:22333343

  13. SiO x /SiN y multilayers for photovoltaic and photonic applications

    NASA Astrophysics Data System (ADS)

    Nalini, Ramesh Pratibha; Khomenkova, Larysa; Debieu, Olivier; Cardin, Julien; Dufour, Christian; Carrada, Marzia; Gourbilleau, Fabrice

    2012-02-01

    Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiO x /SiN y multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiN y as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiO x sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiO x /SiO2 counterparts offers promising future photonic applications. PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).

  14. SiOx/SiNy multilayers for photovoltaic and photonic applications.

    PubMed

    Nalini, Ramesh Pratibha; Khomenkova, Larysa; Debieu, Olivier; Cardin, Julien; Dufour, Christian; Carrada, Marzia; Gourbilleau, Fabrice

    2012-01-01

    Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications.PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters). PMID:22333343

  15. Large scale fabrication of lightweight Si/SiC lidar mirrors

    NASA Astrophysics Data System (ADS)

    Goela, Jitendra Singh; Taylor, Raymond L.

    1989-10-01

    An up-scalable CVD process has been used to fabricate 7.5-cm models of lightweight Si/SiC mirrors consisting of an f/1.6 concave face-plate of SiC coated with CVD Si, in conjunction with a lightweight backup structure of SiC. Due to CVD chamber fabrication, no bonding agent was required to attach the SiC backup structure to the face-plate. Upon up-scaling, the SiC deposition process has been able to produce 40-cm diameter f/1.6 concave mirror face-plates. The mirrors were polished to a 1/5-wave figure and 10 A rms surface finish. There appear to be no intrinsic physical limits to further up-scaling of this mirror-fabrication process.

  16. Spin and valley-orbit splittings in SiGe/Si heterostructures

    NASA Astrophysics Data System (ADS)

    Nestoklon, M. O.; Golub, L. E.; Ivchenko, E. L.

    2006-06-01

    Spin and valley-orbit splittings are calculated in symmetric SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number of Si atomic planes is microscopically demonstrated. The spin splitting oscillates with QW width and these oscillations related to the intervalley reflection of an electron wave from the interfaces. It is shown that the splittings under study can efficiently be described by an extended envelope-function approach taking into account the spin- and valley-dependent interface mixing. The obtained results provide a theoretical base to the experimentally observed electron spin relaxation times in SiGe/Si/SiGe QWs.

  17. Localization of electrons in dome-shaped GeSi/Si islands

    SciTech Connect

    Yakimov, A. I.; Kirienko, V. V.; Bloshkin, A. A.; Armbrister, V. A.; Kuchinskaya, P. A.; Dvurechenskii, A. V.

    2015-01-19

    We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.

  18. Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

    PubMed

    Bashouti, Muhammad Y; Yousefi, Peyman; Ristein, Jürgen; Christiansen, Silke H

    2015-10-01

    Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids. PMID:26722904

  19. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  20. SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Robinson, R. Craig; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1999-01-01

    SiC and Si3N4 materials were tested under various turbine engine combustion environments, chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high speed aircraft. Representative CVD, sintered, and composite materials were evaluated in both furnace and high pressure burner rig exposure. While protective SiO2 scales form in all cases, evidence is presented to support paralinear growth kinetics, i.e. parabolic growth moderated simultaneously by linear volatilization. The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were used to map SiO2 volatility (and SiC recession) over a range of temperature, pressure, and velocity. The functional dependency of material recession (volatility) that emerged followed the form: exp(-QIRT) * P(exp x) * v(exp y). These empirical relations were compared to rates predicted from the thermodynamics of volatile SiO and SiO(sub x)H(sub Y) reaction products and a kinetic model of diffusion through a moving, boundary layer. For typical combustion conditions, recession of 0.2 to 2 micron/h is predicted at 1200- 1400C, far in excess of acceptable long term limits.

  1. SiC and Si3N4 Recession Due to SiO2 Scale Volatility Under Combustor Conditions

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Robinson, Raymond C.; Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1999-01-01

    Silicon carbide (SiC) and Si3N4 materials were tested in various turbine engine combustion environments chosen to represent either conventional fuel-lean or fuel-rich mixtures proposed for high-speed aircraft. Representative chemical vapor-deposited (CVD), sintered, and composite materials were evaluated by furnace and high-pressure burner rig exposures. Although protective SiO2 scales formed in all cases, the evidence presented supports a model based on paralinear growth kinetics (i.e., parabolic growth moderated simultaneously by linear volatilization). The volatility rate is dependent on temperature, moisture content, system pressure, and gas velocity. The burner tests were thus used to map SiO2 volatility (and SiC recession) over a range of temperatures, pressures, and velocities. The functional dependency of material recession (volatility) that emerged followed the form A[exp(-Q / RT)](P(sup x)v(sup y). These empirical relations were compared with rates predicted from the thermodynamics of volatile SiO and SiOxHy reaction products and a kinetic model of diffusion through a moving boundary layer. For typical combustion conditions, recession of 0.2 to 2 micrometers/hr is predicted at 1200 to 1400 C, far in excess of acceptable long-term limits.

  2. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    NASA Astrophysics Data System (ADS)

    Kunimune, Yorinobu; Shimada, Yasuhiro; Sakurai, Yusuke; Inoue, Masao; Nishida, Akio; Han, Bin; Tu, Yuan; Takamizawa, Hisashi; Shimizu, Yasuo; Inoue, Koji; Yano, Fumiko; Nagai, Yasuyoshi; Katayama, Toshiharu; Ide, Takashi

    2016-04-01

    We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO) stack structure using ultraviolet laser-assisted atom probe tomography (APT). The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %). Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA), which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.

  3. Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

    SciTech Connect

    Iacovo, Serena E-mail: andre.stesmans@fys.kuleuven.be; Stesmans, Andre E-mail: andre.stesmans@fys.kuleuven.be

    2014-10-21

    Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

  4. Time-resolved photoluminescence of SiOx encapsulated Si

    NASA Astrophysics Data System (ADS)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  5. Modeling Creep Effects within SiC/SiC Turbine Components

    NASA Technical Reports Server (NTRS)

    DiCarlo, J. A.; Lang, J.

    2008-01-01

    Anticipating the implementation of advanced SiC/SiC ceramic composites into the hot section components of future gas turbine engines, the primary objective of this on-going study is to develop physics-based analytical and finite-element modeling tools to predict the effects of constituent creep on SiC/SiC component service life. A second objective is to understand how to possibly select and manipulate constituent materials, processes, and geometries in order to minimize these effects. In initial studies aimed at SiC/SiC components experiencing through-thickness stress gradients, creep models were developed that allowed an understanding of detrimental residual stress effects that can develop globally within the component walls. It was assumed that the SiC/SiC composites behaved as isotropic visco-elastic materials with temperature-dependent creep behavior as experimentally measured in-plane in the fiber direction of advanced thin-walled 2D SiC/SiC panels. The creep models and their key results are discussed assuming state-of-the-art SiC/SiC materials within a simple cylindrical thin-walled tubular structure, which is currently being employed to model creep-related effects for turbine airfoil leading edges subjected to through-thickness thermal stress gradients. Improvements in the creep models are also presented which focus on constituent behavior with more realistic non-linear stress dependencies in order to predict such key creep-related SiC/SiC properties as time-dependent matrix stress, constituent creep and content effects on composite creep rates and rupture times, and stresses on fiber and matrix during and after creep.

  6. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    NASA Technical Reports Server (NTRS)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  7. On the peritectoid Ti{sub 3}Si formation in Ti-Si alloys

    SciTech Connect

    Ramos, Alfeu Saraiva . E-mail: alfeu@univap.br; Nunes, Carlos Angelo; Coelho, Gilberto Carvalho

    2006-03-15

    Ti-13.5Si and Ti-25Si (at.%) alloys have been arc-melted from high-purity raw materials, using a water-cooled copper hearth, a non-consumable tungsten electrode, and under an Ar atmosphere gettered by titanium. The cast ingots were then heat-treated for 90 h at 1000 and 1100 deg. C in an inert atmosphere, and both the as-cast and the heat-treated alloys were characterized using scanning electron microscopy and an energy dispersive microanalysis system. The as-cast Ti-13.5Si alloy presented a eutectic microstructure composed of the Ti{sub SS} and Ti{sub 5}Si{sub 3} phases, while the microstructure of the as-cast Ti-25Si alloy showed the presence of large primary precipitates of Ti{sub 5}Si{sub 3} in a eutectic matrix of Ti{sub SS} and Ti{sub 5}Si{sub 3}. Subsequent heat treatment at 1100 deg. C produced no significant microstructural modifications in the Ti-25Si alloy, and it is suggested that the presence of the large primary precipitates of Ti{sub 5}Si{sub 3} contributed to a reduction in the kinetics of Ti{sub 3}Si formation. In the Ti-13.5Si alloys, the formation of Ti{sub 3}Si was not observed after heat treatment at 1000 deg. C, but a large amount of Ti{sub 3}Si was found after heat treatment at 1100 deg. C, confirming its existence in Ti-Si alloys containing low interstitial contents.

  8. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ∼70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ∼10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2

  9. Rapid synthesis of MoSi2-Si3N4 nanocomposite via reaction milling of Si and Mo powder mixture

    NASA Astrophysics Data System (ADS)

    Abdellahi, Majid; Amereh, Alireza; Bahmanpou, Hamed; Sharafati, Behzad

    2013-11-01

    The nanocomposite of MoSi2-Si3N4 (molybdenum disilicide-silicon nitride) was synthesized by reaction milling of the Mo and Si powder mixture. Changing the processing parameters led to the formation of different products such as α- and β-MoSi2, Si3N4, Mo2N, and Mo5Si3 at various milling times. A thermodynamic appraisal showed that the milling of Mo32Si68 powder mixture was associated with highly exothermic mechanically induced self-sustaining reaction (MSR) between Mo and Si. The MSR took place around 5 h of milling led to the formation of α-MoSi2 and the reaction between Si and N2 to produce Si3N4 under a nitrogen pressure of 1 MPa. By increasing the nitrogen pressure to 5 MPa, more heat is released, resulting in the dissociation of Si3N4 and the transformation of α-MoSi2 to β-MoSi2. Heat treatment was also performed on the milled samples and led to the formation of Mo2N and the transformation of α-MoSi2 to β-MoSi2 at the milling times of 10 and 40 h, respectively.

  10. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    NASA Astrophysics Data System (ADS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress