Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

NASA Technical Reports Server (NTRS)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors.

PubMed

Fahad, Hossain Mohammad; Shiraki, Hiroshi; Amani, Matin; Zhang, Chuchu; Hebbar, Vivek Srinivas; Gao, Wei; Ota, Hiroki; Hettick, Mark; Kiriya, Daisuke; Chen, Yu-Ze; Chueh, Yu-Lun; Javey, Ali

2017-03-01

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H 2 S, H 2 , and NO 2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

PubMed Central

Fahad, Hossain Mohammad; Shiraki, Hiroshi; Amani, Matin; Zhang, Chuchu; Hebbar, Vivek Srinivas; Gao, Wei; Ota, Hiroki; Hettick, Mark; Kiriya, Daisuke; Chen, Yu-Ze; Chueh, Yu-Lun; Javey, Ali

2017-01-01

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H2S, H2, and NO2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors. PMID:28378017

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

PubMed

Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

2017-12-05

Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

Evaluation of ion-implanted-silicon detectors for use in intraoperative positron-sensitive probes.

PubMed

Raylman, R R; Wahl, R L

1996-11-01

The continuing development of probes for use with beta (positron and electron) emitting radionuclides may result in more complete excision of tracer-avid tumors. Perhaps one of the most promising radiopharmaceuticals for this task is 18F-labeled-Fluoro-2-Deoxy-D-Glucose (FDG). This positron-emitting agent has been demonstrated to be avidly and rapidly absorbed by many human cancers. We have investigated the use of ion-implanted-silicon detectors in intraoperative positron-sensitive surgical probes for use with FDG. These detectors possess very high positron detection efficiency, while the efficiency for 511 keV photon detection is low. The spatial resolution, as well as positron and annihilation photon detection sensitivity, of an ion-implanted-silicon detector used with 18F was measured at several energy thresholds. In addition, the ability of the device to detect the presence of relatively small amounts of FDG during surgery was evaluated by simulating a surgical field in which some tumor was left intact following lesion excision. The performance of the ion-implanted-silicon detector was compared to the operating characteristics of a positron-sensitive surgical probe which utilizes plastic scintillator. In all areas of performance the ion-implanted-silicon detector proved superior to the plastic scintillator-based probe. At an energy threshold of 14 keV positron sensitivity measured for the ion-implanted-silicon detector was 101.3 cps/kBq, photon sensitivity was 7.4 cps/kBq. In addition, spatial resolution was found to be relatively unaffected by the presence of distant sources of annihilation photon flux. Finally, the detector was demonstrated to be able to localize small amounts of FDG in a simulated tumor bed; indicating that this device has promise as a probe to aid in FDG-guided surgery.

Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor

PubMed Central

Ouyang, Qingling; Zeng, Shuwen; Jiang, Li; Hong, Liying; Xu, Gaixia; Dinh, Xuan-Quyen; Qian, Jun; He, Sailing; Qu, Junle; Coquet, Philippe; Yong, Ken-Tye

2016-01-01

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. PMID:27305974

Engineered porous silicon counter electrodes for high efficiency dye-sensitized solar cells.

PubMed

Erwin, William R; Oakes, Landon; Chatterjee, Shahana; Zarick, Holly F; Pint, Cary L; Bardhan, Rizia

2014-06-25

In this work, we demonstrate for the first time, the use of porous silicon (P-Si) as counter electrodes in dye-sensitized solar cells (DSSCs) with efficiencies (5.38%) comparable to that achieved with platinum counter electrodes (5.80%). To activate the P-Si for triiodide reduction, few layer carbon passivation is utilized to enable electrochemical stability of the silicon surface. Our results suggest porous silicon as a promising sustainable and manufacturable alternative to rare metals for electrochemical solar cells, following appropriate surface modification.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Silicon Photonic Waveguides for Near- and Mid-Infrared Regions

NASA Astrophysics Data System (ADS)

Stankovic, S.; Milosevic, M.; Timotijevic, B.; Yang, P. Y.; Teo, E. J.; Crnjanski, J.; Matavulj, P.; Mashanovich, G. Z.

2007-11-01

The basic building block of every photonic circuit is a waveguide. In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator rib waveguide. We also analyse two structures that can find applications in mid- and long-wave infrared regions: free-standing and hollow core omnidirectional waveguides.

Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

NASA Astrophysics Data System (ADS)

Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

2017-12-01

In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

Sensitivity analysis of add-on price estimate for select silicon wafering technologies

NASA Technical Reports Server (NTRS)

Mokashi, A. R.

1982-01-01

The cost of producing wafers from silicon ingots is a major component of the add-on price of silicon sheet. Economic analyses of the add-on price estimates and their sensitivity internal-diameter (ID) sawing, multiblade slurry (MBS) sawing and fixed-abrasive slicing technique (FAST) are presented. Interim price estimation guidelines (IPEG) are used for estimating a process add-on price. Sensitivity analysis of price is performed with respect to cost parameters such as equipment, space, direct labor, materials (blade life) and utilities, and the production parameters such as slicing rate, slices per centimeter and process yield, using a computer program specifically developed to do sensitivity analysis with IPEG. The results aid in identifying the important cost parameters and assist in deciding the direction of technology development efforts.

Near-infrared sensitization in dye-sensitized solar cells.

PubMed

Park, Jinhyung; Viscardi, Guido; Barolo, Claudia; Barbero, Nadia

2013-01-01

Dye-sensitized solar cells (DSCs) are a low cost and colorful promising alternative to standard silicon photovoltaic cells. Though many of the highest efficiencies have been associated with sensitizers absorbing only in the visible portion of the solar radiation, there is a growing interest for NIR sensitization. This paper reviews the efforts made so far to find sensitizers able to absorb efficiently in the far-red NIR region of solar light. Panchromatic sensitizers as well as dyes absorbing mainly in the 650-920 nm region have been considered.

Resistless lithography - selective etching of silicon with gallium doping regions

NASA Astrophysics Data System (ADS)

Abdullaev, D.; Milovanov, R.; Zubov, D.

2016-12-01

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Conformable large-area position-sensitive photodetectors based on luminescence-collecting silicone waveguides

NASA Astrophysics Data System (ADS)

Bartu, Petr; Koeppe, Robert; Arnold, Nikita; Neulinger, Anton; Fallon, Lisa; Bauer, Siegfried

2010-06-01

Position sensitive detection schemes based on the lateral photoeffect rely on inorganic semiconductors. Such position sensitive devices (PSDs) are reliable and robust, but preparation with large active areas is expensive and use on curved substrates is impossible. Here we present a novel route for the fabrication of conformable PSDs which allows easy preparation on large areas, and use on curved surfaces. Our device is based on stretchable silicone waveguides with embedded fluorescent dyes, used in conjunction with small silicon photodiodes. Impinging laser light (e.g., from a laser pointer) is absorbed by the dye in the PSD and re-emitted as fluorescence light at a larger wavelength. Due to the isotropic emission from the fluorescent dye molecules, most of the re-emitted light is coupled into the planar silicone waveguide and directed to the edges of the device. Here the light signals are detected via embedded small silicon photodiodes arranged in a regular pattern. Using a mathematical algorithm derived by extensive using of models from global positioning system (GPS) systems and human activity monitoring, the position of light spots is easily calculated. Additionally, the device shows high durability against mechanical stress, when clamped in an uniaxial stretcher and mechanically loaded up to 15% strain. The ease of fabrication, conformability, and durability of the device suggests its use as interface devices and as sensor skin for future robots.

Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

NASA Astrophysics Data System (ADS)

Urchuk, S. U.; Legotin, S. A.; Osipov, U. V.; Elnikov, D. S.; Didenko, S. I.; Astahov, V. P.; Rabinovich, O. I.; Yaromskiy, V. P.; Kuzmina, K. A.

2015-11-01

In this paper the simulation results of the spectral sensitivity characteristics of silicon p-i-n-photodiodes are presented. The analysis of the characteristics of the semiconductor material (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the characteristics of photosensitive structures in order to optimize them was carried out.

Silicon metal-semiconductor-metal photodetector

DOEpatents

Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

1997-01-01

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Silicon metal-semiconductor-metal photodetector

DOEpatents

Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

1995-01-01

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing.

PubMed

Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T

2012-04-01

We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane.

DTIC Science & Technology

1985-02-18

regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen...addition demonstrated significant changes in the silicon atom profiles near the sheath boundary. Originator supplied keywords include: rf discharge, silane, plasma chemistry , silicon atom, laser-induced fluorescence.

Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

PubMed

Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

2012-11-14

A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

MOVES regional level sensitivity analysis

DOT National Transportation Integrated Search

2012-01-01

The MOVES Regional Level Sensitivity Analysis was conducted to increase understanding of the operations of the MOVES Model in regional emissions analysis and to highlight the following: : the relative sensitivity of selected MOVES Model input paramet...

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

PubMed Central

Grant, Nicholas E.

2016-01-01

A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<1012 cm-3). PMID:26779939

Performance study of thin epitaxial silicon PIN detectors for thermal neutron measurements with reduced γ sensitivity

NASA Astrophysics Data System (ADS)

Singh, Arvind; Desai, Shraddha; Kumar, Arvind; Topkar, Anita

2018-05-01

A novel approach of using thin epitaxial silicon PIN detectors for thermal neutron measurements with reduced γ sensitivity has been presented. Monte Carlo simulations showed that there is a significant reduction in the gamma sensitivity for thin detectors with the thickness of 10- 25 μm compared to a detector of thickness of 300 μm. Epitaxial PIN silicon detectors with the thickness of 10 μm, 15 μm and 25 μm were fabricated using a custom process. The detectors exhibited low leakage currents of a few nano-amperes. The gamma sensitivity of the detectors was experimentally studied using a 33 μCi, 662 keV, 137Cs source. Considering the count rates, compared to a 300 μm thick detector, the gamma sensitivity of the 10 μm, 15 μm and 25 μm thick detectors was reduced by factors of 1874, 187 and 18 respectively. The detector performance for thermal neutrons was subsequently investigated with a thermal neutron beam using an enriched 10B film as a neutron converter layer. The thermal neutron spectra for all three detectors exhibited three distinct regions corresponding to the 4He and 7Li charge products released in the 10B-n reaction. With a 10B converter, the count rates were 1466 cps, 3170 cps and 2980 cps for the detectors of thicknesses of 10 μm, 25 μm and 300 μm respectively. The thermal neutron response of thin detectors with 10 μm and 25 μm thickness showed significant reduction in the gamma sensitivity compared to that observed for the 300 μm thick detector. Considering the total count rate obtained for thermal neutrons with a 10B converter film, the count rate without the converter layer were about 4%, 7% and 36% for detectors with thicknesses of 10 μm, 25 μm and 300 μm respectively. The detector with 10 μm thickness showed negligible gamma sensitivity of 4 cps, but higher electronic noise and reduced pulse heights. The detector with 25 μm thickness demonstrated the best performance with respect to electronic noise, thermal neutron response and

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

International round-robin inter-comparison of dye-sensitized and crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Chen, Chia-Yuan; Ahn, Seung Kyu; Aoki, Dasiuke; Kokubo, Junichi; Yoon, Kyung Hoon; Saito, Hidenori; Lee, Kyung Sik; Magaino, Shinichi; Takagi, Katsuhiko; Lin, Ling-Chuan; Lee, Kun-Mu; Wu, Chun-Guey; Zhou, Hong; Igari, Sanekazu

2017-02-01

An international round-robin inter-comparison of the spectral responsivity (SR) and current-voltage (I-V) characteristics for dye-sensitized solar cells (DSCs) and crystalline silicon solar cells is reported for the first time. The crystalline silicon cells with various spectral responsivities were also calibrated by AIST to validate this round-robin activity. On the basis of the remarkable consistency in Pmax (within ±1.4% among participants) and Isc (within ±1.2% compared to the primary calibration of AIST) of the silicon specimens, the discrepancy in the SR and photovoltaic parameters of five DSCs among three national laboratories can be verified and diagnosed. Recommendations about sample packages, SR and I-V measurement methods as well as the inter-comparison protocol for improving the performance characterization of the mesoscopic DSCs are presented according to the consolidated data and the experience of the participants.

A two-axis micromachined silicon actuator with micrometer range electrostatic actuation and picometer sensitive capacitive detection

NASA Astrophysics Data System (ADS)

Ayela, F.; Bret, J. L.; Chaussy, J.; Fournier, T.; Ménégaz, E.

2000-05-01

This article presents an innovative micromachined silicon actuator. A 50-μm-thick silicon foil is anodically bonded onto a broached Pyrex substrate. A free standing membrane and four coplanar electrodes in close proximity are then lithographied and etched. The use of phosphorus doped silicon with low electrical resistivity allows the application of an electrostatic force between one electrode and the moving diaphragm. This plane displacement and the induced interelectrode variation are capacitively detected. Due to the very low electrical resistivity of the doped silicon, there is no need to metallize the vertical trenches of the device. No piezoelectric transducer takes place so that the mechanical device is free from any hysteretic or temperature dependance. The range of the possible actuation along the x and y axis is around 5 μm. The actual sensitivity is xn=0.54 Å/Hz1/2 and yn=0.14 Å/Hz1/2. The microengineering steps and the electronic setup devoted to design the actuator and to perform relative capacitive measurements ΔC/C=10-6 from an initial value C≈10-13 F are described. The elaborated tests and performances of the device are presented. As a conclusion, some experimental projects using this subnanometric sensitive device are mentioned.

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI.

PubMed

Diologent, Laurent; Franck, Julien; Wisztorski, Maxence; Treizebre, Anthony; Focsa, Cristian; Fournier, Isabelle; Ziskind, Michael

2014-02-04

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one way to improve sensitivity by increasing ion transmission and using more sensitive detection systems. On the other side, improving MALDI ion production yields would have important outcomes. MALDI ion production is still not well-controlled and, indeed, the amount of ions produced per laser shot with respect to the total volume of desorbed material is very low. This has particular implications for certain applications, such as MALDI MS imaging where laser beam focusing as fine as possible (5-10 μm) is searched in order to reach higher spatial resolution images. However, various studies point out an intrinsic decrease in signal intensity for strong focusing. We have therefore been interested in developing silicon mask systems to decrease an irradiated area by cutting rather than focusing the laser beam and to study the parameters affecting sensitivity using such systems. For this, we systematically examined variation with laser fluence of intensity and spectral resolution in MALDI of standard peptides when using silicon-etched masks of various aperture sizes. These studies demonstrate a simultaneous increase in spectral resolution and signal intensity. Origin of this effect is discussed in the frame of the two-step ionization model. Experimental data in the low fluence range are fitted with an increase of the primary ionization through matrix-silicon edge contact provided by the masks. On the other hand, behavior at higher fluence could be explained by an effect on the secondary ionization via changes in the plume dynamics.

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

NASA Astrophysics Data System (ADS)

Franta, Daniel; Franta, Pavel; Vohánka, Jiří; Čermák, Martin; Ohlídal, Ivan

2018-05-01

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

14C autoradiography with an energy-sensitive silicon pixel detector.

PubMed

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

Sensitivity analysis of the add-on price estimate for the silicon web growth process

NASA Technical Reports Server (NTRS)

Mokashi, A. R.

1981-01-01

The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.

CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

PubMed

Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

2016-09-01

A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

SOI-silicon as structural layer for NEMS applications

NASA Astrophysics Data System (ADS)

Villarroya, Maria; Figueras, Eduard; Perez-Murano, Francesc; Campabadal, Francesca; Esteve, Jaume; Barniol, Nuria

2003-04-01

The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.

Recyclability of mixed office waste papers containing pressure sensitive adhesives and silicone release liners

Treesearch

Julie Hess; Roberta Sena-Gomes; Lisa Davie; Marguerite Sykes

2001-01-01

Increased use of pressure sensitive adhesives for labels and stamps has introduced another contaminant into the office paper stream: silicone- coated release liners. This study examines methods and conditions for removal of contaminants, including these liners, from a typical batch of discarded office papers. Removal of contaminants contained in the furnish were...

High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

NASA Technical Reports Server (NTRS)

Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

2003-01-01

Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

Porous silicon photoluminescence biosensor for rapid and sensitive detection of toxins

NASA Astrophysics Data System (ADS)

Melnyk, Yulia; Pavlova, Karyna; Myndrul, Valerii; Viter, Roman; Smyntyna, Valentyn; Iatsunskyi, Igor

2017-08-01

A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Ochratoxin A(OTA) and Aflatoxine B1 (AfB1) has been developed. This biosensor was based on porous silicon (PSi) fabricated by metal-assisted chemical etching (MACE) and modified by antibodies against OTA/AfB1 (anti-OTA/anti-AfB1). Biofunctionalization method of the PSi surface by anti-OTA/ anti-AfB1 was developed. The changes of the PL intensity after interaction of the immobilized anti-OTA/anti-AfB1with OTA/AfB1 antigens were used as biosensor signal, allowing sensitive and selective detection of OTA/AfB1 antigens in BSA solution. The sensitivity of the reported optical biosensor towards OTA/AfB1 antigens is in the range from 10-3 to 102 ng/ml.

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

NASA Astrophysics Data System (ADS)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Frequency non-degenerate phase-sensitive optical parametric amplification based on four-wave-mixing in width-modulated silicon waveguides.

PubMed

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng

2014-12-15

A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.

The microbiological spectrum and antibiotic sensitivity profile of extubated silicone stents following dacryocystorhinostomy.

PubMed

Ali, Mohammad Javed; Manderwad, Guruprasad; Naik, Milind N

2013-10-01

We aim to report the microbiological spectrum of organisms cultured from extubated silicone stents after a dacryocystorhinostomy and their antibiotic sensitivity patterns. Prospective interventional study. 50 silicone stents of 50 consecutive patients who underwent either external or endonasal dacryocystorhinostomy were enrolled for the study. All the stents were retrieved under endoscopic guidance from the nasal cavity at 3 months following surgery. All the tubes were immediately inoculated onto blood agar, chocolate agar, brain-heart infusion broth, Saboraud's dextrose agar and potato dextrose agar. Data collected and analyzed include demographics, diagnosis, type of dacryocystorhinostomy and the microbiological profile. The culture results, organisms isolated and their antibiotic sensitivity were studied. The mean age of patients at the time of dacyrocystorhinostomy was 34.4 years. Bacterial growth was noted in 88% (44/50) of all the stents cultured, whereas 60% (30/50) grew fungi and 6% (3/50) showed sterile cultures. 48% (24/50) of the stents showed mixed bacterial and fungal isolates. Among the fungal isolates, Aspergillus species accounted for 66.6% (20/30) followed by Fusarium species, which were seen in 26.6% (8/30). Among the bacterial isolates, gram negative organisms were the most common seen in 54.5% (24/44) and the commonest species isolated was Pseudomonas aeruginosa from 27% (12/44) of the stents. Staphylococcus aureus was the commonest gram positive isolate accounting for 18% of all the bacterial isolates. Gram positive organisms were commonly sensitive to cephalosporins and vancomycin whereas gram negative organisms were sensitive to quinolones and aminoglycosides. The surgical success rate was 96% (48/50). Fungal isolates were cultured from significant number of stents retrieved following dacryocystorhinostomy. Gram negative organisms are more common as compared to the gram positive. The organisms isolated were not found to influence the success

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zegrya, G. G.; Savenkov, G. G.; Morozov, V. A.

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the siliconmore » powder.« less

Liposuction and lipofilling for treatment of symptomatic silicone toxicosis of the gluteal region.

PubMed

Salgado, Christopher J; Sinha, Varsha R; Desai, Urmen

2014-05-01

Silicone injection can cause numerous posttreatment complications-including debilitating pain, cellulitis, abscesses, overlying skin compromise, and siliconomas distorting overlying tissues-that can be difficult to manage. The authors evaluate liposuction as a treatment for patients experiencing complications from silicone injections to the gluteal region, to both preserve aesthetic appearance and minimize further risk of complication from these procedures. Eight patients (7 women and 1 man) who presented consecutively to us between 2010 and 2013 with complications from silicone injections to their gluteal region were enrolled in this study. Each patient was evaluated by computed tomography scan and a 0 to 6 visual analog scale for pain. Emergency room (ER) visits, previous hospital admissions, and cellulitis requiring antibiotics in the 12 months prior to treatment were recorded. Patients were treated with ultrasonic and standard liposuction followed by lipotransfer into the gluteal musculature. A Student t test was used for statistical comparison of pre- and postoperative values. Average patient age was 36 years (range, 25-43 years). All patients initially presented with intense pain as assessed by a visual analog scale; by the 12th week postoperatively, the entire cohort experienced remission in pain. At 1 year postoperatively, no patients had infections (vs 75% preoperatively; P = .028), visited the ER (vs 50% preoperatively; P = .058), or were hospitalized (vs an average of 1.5 hospitalizations per patient preoperatively; P = .066). Liposuction with immediate intramuscular fat transfer for buttock augmentation appears to be a safe surgical option that preserves aesthetic appearance for patients with gluteal silicone toxicosis.

Characterization of the VEGA ASIC coupled to large area position-sensitive Silicon Drift Detectors

NASA Astrophysics Data System (ADS)

Campana, R.; Evangelista, Y.; Fuschino, F.; Ahangarianabhari, M.; Macera, D.; Bertuccio, G.; Grassi, M.; Labanti, C.; Marisaldi, M.; Malcovati, P.; Rachevski, A.; Zampa, G.; Zampa, N.; Andreani, L.; Baldazzi, G.; Del Monte, E.; Favre, Y.; Feroci, M.; Muleri, F.; Rashevskaya, I.; Vacchi, A.; Ficorella, F.; Giacomini, G.; Picciotto, A.; Zuffa, M.

2014-08-01

Low-noise, position-sensitive Silicon Drift Detectors (SDDs) are particularly useful for experiments in which a good energy resolution combined with a large sensitive area is required, as in the case of X-ray astronomy space missions and medical applications. This paper presents the experimental characterization of VEGA, a custom Application Specific Integrated Circuit (ASIC) used as the front-end electronics for XDXL-2, a large-area (30.5 cm2) SDD prototype. The ASICs were integrated on a specifically developed PCB hosting also the detector. Results on the ASIC noise performances, both stand-alone and bonded to the large area SDD, are presented and discussed.

High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

PubMed

Tsao, Chia-Wen; Yang, Zhi-Jie

2015-10-14

Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

Highly sensitive silicon microreactor for catalyst testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henriksen, Toke R.; Hansen, Ole; Department of Physics, Danish National Research Foundation's Center for Individual Nanoparticle Functionality

2009-12-15

A novel microfabricated chemical reactor for highly sensitive measurements of catalytic activity and surface kinetics is presented. The reactor is fabricated in a silicon chip and is intended for gas-phase reactions at pressures ranging from 0.1 to 5.0 bar. A high sensitivity is obtained by directing the entire gas flow through the catalyst bed to a mass spectrometer, thus ensuring that nearly all reaction products are present in the analyzed gas flow. Although the device can be employed for testing a wide range of catalysts, the primary aim of the design is to allow characterization of model catalysts which canmore » only be obtained in small quantities. Such measurements are of significant fundamental interest but are challenging because of the low surface areas involved. The relationship between the reaction zone gas flow and the pressure in the reaction zone is investigated experimentally. A corresponding theoretical model is presented, and the gas flow through an on-chip flow-limiting capillary is predicted to be in the intermediate regime. The experimental data for the gas flow are found to be in good agreement with the theoretical model. At typical experimental conditions, the total gas flow through the reaction zone is around 3x10{sup 14} molecules s{sup -1}, corresponding to a gas residence time in the reaction zone of about 11 s. To demonstrate the operation of the microreactor, CO oxidation on low-area platinum thin film circles is employed as a test reaction. Using temperature ramping, it is found that platinum catalysts with areas as small as 15 {mu}m{sup 2} are conveniently characterized with the device.« less

Enhanced Raman scattering in porous silicon grating.

PubMed

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Silicon carbide thyristor

NASA Technical Reports Server (NTRS)

Edmond, John A. (Inventor); Palmour, John W. (Inventor)

1996-01-01

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Estimation of regional differences in wind erosion sensitivity in Hungary

NASA Astrophysics Data System (ADS)

Mezősi, G.; Blanka, V.; Bata, T.; Kovács, F.; Meyer, B.

2015-01-01

In Hungary, wind erosion is one of the most serious natural hazards. Spatial and temporal variation in the factors that determine the location and intensity of wind erosion damage are not well known, nor are the regional and local sensitivities to erosion. Because of methodological challenges, no multi-factor, regional wind erosion sensitivity map is available for Hungary. The aim of this study was to develop a method to estimate the regional differences in wind erosion sensitivity and exposure in Hungary. Wind erosion sensitivity was modelled using the key factors of soil sensitivity, vegetation cover and wind erodibility as proxies. These factors were first estimated separately by factor sensitivity maps and later combined by fuzzy logic into a regional-scale wind erosion sensitivity map. Large areas were evaluated by using publicly available data sets of remotely sensed vegetation information, soil maps and meteorological data on wind speed. The resulting estimates were verified by field studies and examining the economic losses from wind erosion as compensated by the state insurance company. The spatial resolution of the resulting sensitivity map is suitable for regional applications, as identifying sensitive areas is the foundation for diverse land development control measures and implementing management activities.

Cascaded nano-porous silicon for high sensitive biosensing and functional group distinguishing by Mid-IR spectra.

PubMed

Nguyen, Minh-Hang; Tsai, Hau-Jie; Wu, Jen-Kuei; Wu, Yi-Shiuan; Lee, Ming-Chang; Tseng, Fan-Gang

2013-09-15

We present a chemical-biosensor in the Mid-IR range and based on cascaded porous silicon made on p- and n-type (100) silicon substrates of resistivities between 0.001Ωcm and 0.005Ωcm. The stacked porous layers of various porosities (20-80%) and thicknesses (5-9μm) are formed by successive electrochemical etchings with different current densities. Working with FTIR technique that possesses fast response, high sensitivity, and capability of detecting and identifying functional groups, the cascaded porous structures provided enhanced refractive index sensitivities and reduced detection limits in chemical and biodetection. The largest wavenumber shifts were 50cm(-1)/mM obtained for d-(+)-glucose and 96cm(-1)/μg/mL for Cy5-conjungated Rabbit Anti-Mouse IgG. The lowest detectable concentration of glucose was 80μM (1.4mg/mL) with PS porosity of 40% and thickness of about 9μm while it was 40ng/mL for Cy5-conjugated Rabbit Anti-Mouse IgG which is 2.5×10(5) folds better than those in literature. Copyright © 2013 Elsevier B.V. All rights reserved.

Compensated amorphous silicon solar cell

DOEpatents

Carlson, David E.

1980-01-01

An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response.

PubMed

Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H

2008-03-15

We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.

Current economic and sensitivity analysis for ID slicing of 4 inch and 6 inch diameter silicon ingots for photovoltaic applications

NASA Technical Reports Server (NTRS)

Roberts, E. G.; Johnson, C. M.

1982-01-01

The economics and sensitivities of slicing large diameter silicon ingots for photovoltaic applications were examined. Current economics and slicing add on cost sensitivities are calculated using variable parameters for blade life, slicing yield, and slice cutting speed. It is indicated that cutting speed has the biggest impact on slicing add on cost, followed by slicing yield, and by blade life as the blade life increases.

Silicon-based antenna-coupled polarization-sensitive millimeter-wave bolometer arrays for cosmic microwave background instruments

NASA Astrophysics Data System (ADS)

Rostem, Karwan; Ali, Aamir; Appel, John W.; Bennett, Charles L.; Brown, Ari; Chang, Meng-Ping; Chuss, David T.; Colazo, Felipe A.; Costen, Nick; Denis, Kevin L.; Essinger-Hileman, Tom; Hu, Ron; Marriage, Tobias A.; Moseley, Samuel H.; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Xu, Zhilei

2016-07-01

We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant, characteristics that are critical for realizing efficient and uniform superconducting microwave circuits. An additional advantage of this material is its low specific heat. In a detector pixel, two Transition-Edge Sensor (TES) bolometers are antenna-coupled to in-band radiation via a symmetric planar orthomode transducer (OMT). Each orthogonal linear polarization is coupled to a separate superconducting microstrip transmission line circuit. On-chip filtering is employed to both reject out-of-band radiation from the upper band edge to the gap frequency of the niobium superconductor, and to flexibly define the bandwidth for each TES to meet the requirements of the application. The microwave circuit is compatible with multi-chroic operation. Metalized silicon platelets are used to define the backshort for the waveguide probes. This micro-machined structure is also used to mitigate the coupling of out-of-band radiation to the microwave circuit. At 40 GHz, the detectors have a measured efficiency of ˜90%. In this paper, we describe the development of the 90 GHz detector arrays that will be demonstrated using the Cosmology Large Angular Scale Surveyor (CLASS) ground-based telescope.

Determination of Silicon in Hydrazine

NASA Technical Reports Server (NTRS)

McClure, Mark B.; Mast, Dion; Greene, Ben; Maes, Miguel J.

2006-01-01

Inductively coupled plasma-mass spectrometry (ICP-MS) is a highly sensitive technique sometimes used for the trace determination of silicon at a mass-to-charge (m/z) ratio of 28, the most abundant natural isotope of silicon. Unfortunately, ICP-MS is unable to differentiate between other sources of m/z 28 and false positive results for silicon will result when other sources of m/z 28 are present. Nitrogen was a major source of m/z 28 and contributes to the m/z 28 signal when hydrazine sample or nitric acid preservative is introduced into the plasma. Accordingly, this work was performed to develop a sample preparation step coupled with an ICP-MS analysis that minimized non-silicon sources of m/z 28. In the preparatory step of this method, the hydrazine sample was first decomposed predominately to nitrogen gas and water with copper-catalyzed hydrogen peroxide. In the analysis step, ICP-MS was used without nitric acid preservative in samples or standards. Glass, a potential source of silicon contamination, was also avoided where possible. The method was sensitive, accurate, and reliable for the determination of silicon in monopropellant grade hydrazine (MPH) in AF-E-332 elastomer leaching tests. Results for silicon in MPH were comparable to those reported in the literature for other studies.

Dynamic Silicon Nanophotonics

DTIC Science & Technology

2013-07-31

sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

Temperature sensitivity of silicon nitride nanocoated long-period gratings working in various surrounding media

NASA Astrophysics Data System (ADS)

Smietana, M.; Bock, W. J.; Mikulic, P.

2011-11-01

This paper presents the temperature sensing properties of a silicon nitride (SiNx) nanocoated long-period grating (LPG). A high-temperature, radio-frequency plasma-enhanced chemical-vapor-deposited SiNx nanocoating was applied to tune the external refractive index (RI) sensitivity of LPGs written with UV and electric arc techniques in boron co-doped and standard germanium doped fibers, respectively. The technique allows for deposition of good quality, hard and wear-resistant nanofilms as are required for optical sensors. Thanks to the high-RI SiNx nanocoating, which is less than 90 nm thick, it is possible to reduce RI sensitivity over a wide range (from nD = 1.333 to 1.479), simultaneously decreasing its cross-sensitivity to temperature. For the presented nanocoated LPGs, the temperature effect on resonance wavelength is linear and slightly dependent on the thermo-optic coefficient of the surrounding liquid. The other advantage of the nanocoating is that it makes the resonance clearly visible in the whole investigated external RI range. To the best of our knowledge, this work presents for the first time a nanocoating able to simultaneously tune the RI sensitivity and enable temperature measurements in high-RI liquids applied to LPGs.

A broadband-sensitive upconverter La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}:Er,Ni,Nb for crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Mizuno, Shintaro; Luitel, Hom Nath

2016-01-25

We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er{sup 3+}-doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er{sup 3+} ions. Ni{sup 2+} ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er{sup 3+} absorption band and transfer the energies to the Er{sup 3+} emitters, with La(Ga,Sc)O{submore » 3} as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni{sup 2+} absorption band for sufficient energy transfer. Co-doping with Nb{sup 5+} ions is needed for charge balance to introduce divalent Ni{sup 2+} ions into the trivalent Ga{sup 3+} and Sc{sup 3+} sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er{sup 3+} ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni{sup 2+} absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}. The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones.« less

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

PubMed

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

A cost effective encapsulant system was identified and a silicone acrylic cover material containing a durable ultraviolet screening agent was prepared. The effectiveness of the cover material in protecting photo-oxidatively sensitive polymers was demonstrated.

Design and analysis of a silicon-based antiresonant reflecting optical waveguide chemical sensor

NASA Astrophysics Data System (ADS)

Remley, Kate A.; Weisshaar, Andreas

1996-08-01

The design of a silicon-based antiresonant reflecting optical waveguide (ARROW) chemical sensor is presented, and its theoretical performance is compared with that of a conventional structure. The use of an ARROW structure permits incorporation of a thick guiding region for efficient coupling to a single-mode fiber. A high-index overlay is added to fine tune the sensitivity of the ARROW chemical sensor. The sensitivity of the sensor is presented, and design trade-offs are discussed.

Silicon micromachined vibrating gyroscopes

NASA Astrophysics Data System (ADS)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

2017-11-01

Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

Silicon microengineering for accelerometers

NASA Astrophysics Data System (ADS)

Satchell, D. W.

Silicon microengineering enables the excellent mechanical properties of silicon to be combined with electronic ones to produce accelerometers of good performance, small size and low cost. The design and fabrication of two types of analogue accelerometer, using this technique, are described. One employs implanted strain gauges to give a dc output, while the other has a strain-sensitive resonant structure which gives a varying frequency signal.

On Chip Protein Pre-Concentration for Enhancing the Sensitivity of Porous Silicon Biosensors.

PubMed

Arshavsky-Graham, Sofia; Massad-Ivanir, Naama; Paratore, Federico; Scheper, Thomas; Bercovici, Moran; Segal, Ester

2017-12-22

Porous silicon (PSi) nanomaterials have been widely studied as label-free optical biosensors for protein detection. However, these biosensors' performance, specifically in terms of their sensitivity (which is typically in the micromolar range), is insufficient for many applications. Herein, we present a proof-of-concept application of the electrokinetic isotachophoresis (ITP) technique for real-time preconcentration of a target protein on a PSi biosensor. With ITP, a highly concentrated target zone is delivered to the sensing area, where the protein target is captured by immobilized aptamers. The detection of the binding events is conducted in a label-free manner by reflective interferometric Fourier transformation spectroscopy (RIFTS). Up to 1000-fold enhancement in local concentration of the protein target and the biosensor's sensitivity are achieved, with a measured limit of detection of 7.5 nM. Furthermore, the assay is successfully performed in complex media, such as bacteria lysate samples, while the selectivity of the biosensor is retained. The presented assay could be further utilized for other protein targets, and to promote the development of clinically useful PSi biosensors.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

PubMed Central

Chakravarty, Swapnajit; Yang, Chun-Ju; Wang, Zheng; Tang, Naimei; Fan, Donglei; Chen, Ray T.

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed. PMID:25829549

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experimentmore » showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.« less

The electrophotonic silicon biosensor

NASA Astrophysics Data System (ADS)

Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

2016-09-01

The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

Solar cell structure incorporating a novel single crystal silicon material

DOEpatents

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

PubMed

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Review Application of Nanostructured Black Silicon

NASA Astrophysics Data System (ADS)

Lv, Jian; Zhang, Ting; Zhang, Peng; Zhao, Yingchun; Li, Shibin

2018-04-01

As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

NASA Technical Reports Server (NTRS)

Ciszek, T. F.; Schwuttke, G. H. (Inventor)

1979-01-01

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

MOVES2010a regional level sensitivity analysis

DOT National Transportation Integrated Search

2012-12-10

This document discusses the sensitivity of various input parameter effects on emission rates using the US Environmental Protection Agencys (EPAs) MOVES2010a model at the regional level. Pollutants included in the study are carbon monoxide (CO),...

Microglial brain region-dependent diversity and selective regional sensitivities to ageing

PubMed Central

Grabert, Kathleen; Michoel, Tom; Karavolos, Michail H; Clohisey, Sara; Baillie, J Kenneth; Stevens, Mark P; Freeman, Tom C; Summers, Kim M; McColl, Barry W

2015-01-01

Microglia play critical roles in neural development, homeostasis and neuroinflammation and are increasingly implicated in age-related neurological dysfunction. Neurodegeneration often occurs in disease-specific spatially-restricted patterns, the origins of which are unknown. We performed the first genome-wide analysis of microglia from discrete brain regions across the adult lifespan of the mouse and reveal that microglia have distinct region-dependent transcriptional identities and age in a regionally variable manner. In the young adult brain, differences in bioenergetic and immunoregulatory pathways were the major sources of heterogeneity and suggested that cerebellar and hippocampal microglia exist in a more immune vigilant state. Immune function correlated with regional transcriptional patterns. Augmentation of the distinct cerebellar immunophenotype and a contrasting loss in distinction of the hippocampal phenotype among forebrain regions were key features during ageing. Microglial diversity may enable regionally localised homeostatic functions but could also underlie region-specific sensitivities to microglial dysregulation and involvement in age-related neurodegeneration. PMID:26780511

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Minahan, J. A.

1981-01-01

The fabrication of solar cells from several unconventional silicon materials is described, and cell performance measured and analyzed. Unconventional materials evaluated are edge defined film fed grown (EFG), heat exchanger method (HEM), dendritic web grown, and continuous CZ silicons. Resistivity, current voltage, and spectral sensitivity of the cells were measured. Current voltage was measured under AM0 and AM1 conditions. Maximum conversion efficiencies of cells fabricated from these and other unconventional silicons were compared and test results analyzed. The HEM and continuous CZ silicon were found to be superior to silicon materials considered previously.

A micron resolution optical scanner for characterization of silicon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, R. A.; Dugad, S. R., E-mail: dugad@cern.ch; Gopal, A. V.

2014-02-15

The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fastmore » timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 − σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.« less

Role of the primary silicon particle on the dry sliding wear of hypereutectic aluminium-silicon alloy A390

NASA Astrophysics Data System (ADS)

Lee, Jung-Moo; Kang, Suk-Bong; Yoon, Sang-Chul

1999-07-01

The wear behavior of hypereutectic aluminium-silicon alloy A390 was investigated using a pin-on-disc wear machine under dry sliding conditions. The wear tests were performed within a load range of 10 to 300N at a constant sliding velocity of 0.5 m/sec. The microstructural and compositional changes that took place during wear were characterized by scanning electron microscopy (SEM) equipped with an energy dispersive X-ray analysis (EDXA) system. Based on the metallographic observations the role of the primary silicon particles was suggested. In a low pressure region, primary silicon particles supported the applied load and wear occurred mainly in the matrix. Thus the wear loss did not show much variation with the applied load. In the mid-load range, primary silicon particles did not yet fracture and thus supported the applied load in part. Transition from oxidative to metallic wear occurs mainly in the matrix and the increase of wear loss becomes sharper than that in a low pressure region. In the high pressure region, the fractures of primary silicon Particles occurred and wear loss increased sharply.

Silicon chemistry in interstellar clouds

NASA Technical Reports Server (NTRS)

Langer, William D.; Glassgold, A. E.

1989-01-01

Interstellar SiO was discovered shortly after CO but it has been detected mainly in high density and high temperature regions associated with outflow sources. A new model of interstellar silicon chemistry that explains the lack of SiO detections in cold clouds is presented which contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine structure levels of the silicon atom. This effect was originally pointed out in the context of neutral reactions of carbon and oxygen by Graff, who noted that the leading term in neutral atom-molecule interactions involves the quadrupole moment of the atom. Similar to the case of carbon, the requirement that Si has a quadrupole moment requires population of the J = 1 level, which lies 111K above the J = 0 ground state and has a critical density n(cr) equal to or greater than 10(6)/cu cm. The SiO abundance then has a temperature dependence proportional to exp(-111/T) and a quadratic density dependence for n less than n(cr). As part of the explanation of the lack of SiO detections at low temperatures and densities, this model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundances of oxygen bearing molecules and the depletion of interstellar silicon.

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

PubMed

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

Microstructured silicon radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

2017-03-14

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Through-silicon via-induced strain distribution in silicon interposer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vianne, B., E-mail: benjamin.vianne@st.com; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles; Richard, M.-I.

2015-04-06

Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along themore » [335] direction is found to be in the 10{sup −5} range at room temperature and around 10{sup −4} at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.« less

Frequency-degenerate phase-sensitive optical parametric amplification based on four-wave mixing in graphene–silicon slot waveguide

NASA Astrophysics Data System (ADS)

Li, Zhen; Liu, Hongjun; Huang, Nan; Wang, Zhaolu; Han, Jing

2018-06-01

The phase-sensitive amplification process of a hybrid graphene–silicon (HyGS) slot waveguide with trilayers of graphene is investigated in this paper. Numerical simulation shows that a relatively high extinction ratio (42 dB) is achieved, because of the ultrahigh nonlinear coefficients, with a waveguide length of only 680 µm. In addition, the graphene layer provides the possibility of modulating the phase status and gain of the output signal. This study is expected to be highly beneficial to applications such as integrated optics and graphene-related active optical devices.

Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

NASA Astrophysics Data System (ADS)

Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

2018-04-01

In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

NASA Astrophysics Data System (ADS)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

Microelectromechanical pump utilizing porous silicon

DOEpatents

Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

2011-07-19

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

Aquaporins Mediate Silicon Transport in Humans.

PubMed

Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

NASA Astrophysics Data System (ADS)

Trzynadlowski, Bart

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-effective solar cells continues to push the frontiers of process technology. Fabrication of silicon devices requires extremely precise control of impurities and crystallographic defects. Failure to do so not only reduces performance, efficiency, and yield, it threatens the very survival of commercial enterprises in today's fiercely competitive and price-sensitive global market. The presence of oxygen in silicon is an unavoidable consequence of the Czochralski process, which remains the most popular method for large-scale production of single-crystal silicon. Oxygen precipitates that form during thermal processing cause distortion of the surrounding silicon lattice and can lead to the formation of dislocation loops. Localized deformation caused by both of these defects introduces potential wells that trap diffusing impurities such as metal atoms, which is highly desirable if done far away from sensitive device regions. Unfortunately, dislocations also reduce the mechanical strength of silicon, which can cause wafer warpage and breakage. Engineers must negotiate this and other complex tradeoffs when designing fabrication processes. Accomplishing this in a complex, modern process involving a large number of thermal steps is impossible without the aid of computational models. In this dissertation, new models for oxygen precipitation and dislocation loop evolution are described. An oxygen model using kinetic rate equations to evolve the complete precipitate size distribution was developed first. This was then used to create a reduced model tracking only the moments of the size distribution. The moment-based model was found to run significantly faster than its full counterpart while accurately capturing the evolution of oxygen precipitates. The reduced model was fitted to experimental data and a sensitivity analysis was performed to assess the robustness of the results. Source

A new dielectric metamaterial building block with a strong magnetic response in the sub-1.5-micrometer region: silicon colloid nanocavities.

PubMed

Shi, Lei; Tuzer, T Umut; Fenollosa, Roberto; Meseguer, Francisco

2012-11-20

A new dielectric metamaterial building block based on high refractive index silicon spherical nanocavities with Mie resonances appearing in the near infrared optical region is prepared and characterized. It is demonstrated both experimentally and theoretically that a single silicon nanocavity supports well-defined and robust magnetic resonances, even in a liquid medium environment, at wavelength values up to six times larger than the cavity radius. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities

PubMed Central

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures’ refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times. PMID:28045442

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

NASA Astrophysics Data System (ADS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-12-01

A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

The Sensitivity of Regional Precipitation to Global Temperature Change and Forcings

NASA Astrophysics Data System (ADS)

Tebaldi, C.; O'Neill, B. C.; Lamarque, J. F.

2016-12-01

Global policies are most commonly formulated in terms of climate targets, like the much talked about 1.5° and 2°C warming thresholds identified as critical by the recent Paris agreements. But what does a target defined in terms of a globally averaged quantity mean in terms of expected regional changes? And, in particular, what should we expect in terms of significant changes in precipitation over specific regional domains for these and other incrementally different global goals? In this talk I will summarize the result of an analysis that aimed at characterizing the sensitivity of regional temperatures and precipitation amounts to changes in global average temperature. The analysis uses results from a multi-model ensemble (CMIP5), which allows us to address structural uncertainty in future projections, a type of uncertainty particularly relevant when considering precipitation changes. I will show what type of changes in global temperature and forcing levels bring about significant and pervasive changes in regional precipitation, contrasting its sensitivity to that of regional temperature changes. Because of the large internal variability of regional precipitation, I will show that significant changes in average regional precipitation can be detected only for fairly large separations (on the order of 2.5° or 3°C) in global average temperature levels, differently from the much higher sensitivity shown by regional temperatures.

Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

PubMed

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-21

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

NASA Astrophysics Data System (ADS)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Ion irradiation of the native oxide/silicon surface increases the thermal boundary conductance across aluminum/silicon interfaces

NASA Astrophysics Data System (ADS)

Gorham, Caroline S.; Hattar, Khalid; Cheaito, Ramez; Duda, John C.; Gaskins, John T.; Beechem, Thomas E.; Ihlefeld, Jon F.; Biedermann, Laura B.; Piekos, Edward S.; Medlin, Douglas L.; Hopkins, Patrick E.

2014-07-01

The thermal boundary conductance across solid-solid interfaces can be affected by the physical properties of the solid boundary. Atomic composition, disorder, and bonding between materials can result in large deviations in the phonon scattering mechanisms contributing to thermal boundary conductance. Theoretical and computational studies have suggested that the mixing of atoms around an interface can lead to an increase in thermal boundary conductance by creating a region with an average vibrational spectra of the two materials forming the interface. In this paper, we experimentally demonstrate that ion irradiation and subsequent modification of atoms at solid surfaces can increase the thermal boundary conductance across solid interfaces due to a change in the acoustic impedance of the surface. We measure the thermal boundary conductance between thin aluminum films and silicon substrates with native silicon dioxide layers that have been subjected to proton irradiation and post-irradiation surface cleaning procedures. The thermal boundary conductance across the Al/native oxide/Si interfacial region increases with an increase in proton dose. Supported with statistical simulations, we hypothesize that ion beam mixing of the native oxide and silicon substrate within ˜2.2nm of the silicon surface results in the observed increase in thermal boundary conductance. This ion mixing leads to the spatial gradation of the silicon native oxide into the silicon substrate, which alters the acoustic impedance and vibrational characteristics at the interface of the aluminum film and native oxide/silicon substrate. We confirm this assertion with picosecond acoustic analyses. Our results demonstrate that under specific conditions, a "more disordered and defected" interfacial region can have a lower resistance than a more "perfect" interface.

EPA Region 1 Environmentally Sensitive Areas

EPA Pesticide Factsheets

This coverage represents polygon equivalents of environmentally sensitive areas (ESA) in EPA Region I. ESAs were developed as part of an EPA headquarters initiative based on reviews of various regulatory and guidance documents, as well as phone interviews with federal/state/local government agencies and private organizations. ESAs include, but are not limited to, wetlands, biological resources, habitats, national parks, archaeological/historic sites, natural heritage areas, tribal lands, drinking water intakes, marinas/boat ramps, wildlife areas, etc.

Aquaporins Mediate Silicon Transport in Humans

PubMed Central

Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J.; Bélanger, Richard; Côté, François; Isenring, Paul

2015-01-01

In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates. PMID:26313002

Plasma-deposited fluoropolymer film mask for local porous silicon formation

PubMed Central

2012-01-01

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates. PMID:22734507

Silicon nanostructures for cancer diagnosis and therapy.

PubMed

Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

2015-01-01

The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Instability in radiatively melted silicon films

NASA Astrophysics Data System (ADS)

Jackson, K. A.; Kurtze, Douglas A.

1985-04-01

Bosch and Lemons [Phys. Rev. Letters 47 (1981) 1151] were first to report that on heating of silicon with a laser, the heated area can break up into small regions of solid and liquid. Thus phenomenon produces undesirable surface roughness on silicon which has been melted using irradiation from a laser or heat lamps. It is due to the higher reflectivity of liquid silicon so that radiative heating produces small regions of superheated solid in contact with small regions of supercooled liquid. In this paper, the instabilities resulting from this unusual thermal situation have been analyzed. It is shown that a stable pattern can develop provided that the spacing between the solid and liquid is small enough. For a 1/2 μm thick layer of polysilicon on silica, the calculated stable spacing is less than about 10 μm, in accord with experiment.

The fabrication of nitrogen detector porous silicon nanostructures

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

PubMed

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Silicon chemistry in interstellar clouds

NASA Technical Reports Server (NTRS)

Langer, William D.; Glassgold, A. E.

1990-01-01

A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon.

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

Compact eccentric long period grating with improved sensitivity in low refractive index region.

PubMed

Shen, Fangcheng; Zhou, Kaiming; Gordon, Neil; Zhang, Lin; Shu, Xuewen

2017-07-10

We demonstrate a compact eccentric long period grating with enhanced sensitivity in low refractive index region. With a period designed at 15 µm for coupling light to high order cladding modes, the grating is more sensitive to surrounding refractive index in low refractive index region. The intrinsically low coupling coefficients for those high order cladding modes are significantly improved with the eccentric localized inscription induced by the femtosecond laser. The fabricated grating is compact with a length of 4.05 mm, and exhibits an average sensitivity of ~505 nm/RIU in low refractive index region (1.3328-1.3544). The proposed principle can also work in other refractive index region with a proper choice of the resonant cladding modes.

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

Multispectral imaging with vertical silicon nanowires

PubMed Central

Park, Hyunsung; Crozier, Kenneth B.

2013-01-01

Multispectral imaging is a powerful tool that extends the capabilities of the human eye. However, multispectral imaging systems generally are expensive and bulky, and multiple exposures are needed. Here, we report the demonstration of a compact multispectral imaging system that uses vertical silicon nanowires to realize a filter array. Multiple filter functions covering visible to near-infrared (NIR) wavelengths are simultaneously defined in a single lithography step using a single material (silicon). Nanowires are then etched and embedded into polydimethylsiloxane (PDMS), thereby realizing a device with eight filter functions. By attaching it to a monochrome silicon image sensor, we successfully realize an all-silicon multispectral imaging system. We demonstrate visible and NIR imaging. We show that the latter is highly sensitive to vegetation and furthermore enables imaging through objects opaque to the eye. PMID:23955156

Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.

PubMed

Nohira, Toshiyuki; Yasuda, Kouji; Ito, Yasuhiko

2003-06-01

Silicon dioxide (SiO(2)) is conventionally reduced to silicon by carbothermal reduction, in which the oxygen is removed by a heterogeneous-homogeneous reaction sequence at approximately 1,700 degrees C. Here we report pinpoint and bulk electrochemical methods for removing oxygen from solid SiO(2) in a molten CaCl(2) electrolyte at 850 degrees C. This approach involves a 'contacting electrode', in which a metal wire supplies electrons to a selected region of the insulating SiO(2). Bulk reduction of SiO(2) is possible by increasing the number of contacting points. The same method was also demonstrated with molten LiCl-KCl-CaCl(2) at 500 degrees C. The novelty and relative simplicity of this method might lead to new processes in silicon semiconductor technology, as well as in high-purity silicon production. The methodology may be applicable to electrochemical processing of a wide variety of insulating materials, provided that the electrolyte dissolves the appropriate constituent ion(s) of the material.

3D scanning characteristics of an amorphous silicon position sensitive detector array system.

PubMed

Contreras, Javier; Gomes, Luis; Filonovich, Sergej; Correia, Nuno; Fortunato, Elvira; Martins, Rodrigo; Ferreira, Isabel

2012-02-13

The 3D scanning electro-optical characteristics of a data acquisition prototype system integrating a 32 linear array of 1D amorphous silicon position sensitive detectors (PSD) were analyzed. The system was mounted on a platform for imaging 3D objects using the triangulation principle with a sheet-of-light laser. New obtained results reveal a minimum possible gap or simulated defect detection of approximately 350 μm. Furthermore, a first study of the angle for 3D scanning was also performed, allowing for a broad range of angles to be used in the process. The relationship between the scanning angle of the incident light onto the object and the image displacement distance on the sensor was determined for the first time in this system setup. Rendering of 3D object profiles was performed at a significantly higher number of frames than in the past and was possible for an incident light angle range of 15 ° to 85 °.

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

PubMed Central

Contreras, Javier; Costa, Daniel; Pereira, Sonia; Fortunato, Elvira; Martins, Rodrigo; Wierzbicki, Rafal; Heerlein, Holger; Ferreira, Isabel

2010-01-01

The movement of a micro cantilever was detected via a self constructed portable data acquisition prototype system which integrates a linear array of 32 1D amorphous silicon position sensitive detectors (PSD). The system was mounted on a microscope using a metal structure platform and the movement of the 30 μm wide by 400 μm long cantilever was tracked by analyzing the signals acquired by the 32 sensor array electronic readout system and the relevant data algorithm. The obtained results show a linear behavior of the photocurrent relating X and Y movement, with a non-linearity of about 3%, a spatial resolution of less than 2 μm along the lateral dimension of the sensor as well as of less than 3 μm along the perpendicular dimension of the sensor, when detecting just the micro-cantilever, and a spatial resolution of less than 1 μm when detecting the holding structure. PMID:22163648

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparentmore » passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.« less

XANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions.

PubMed

Yoshida, T; Hara, T; Li, T; Yoshida, H; Tanabe, T

2001-03-01

X-ray absorption techniques have been applied to the characterization of 5 keV nitrogen / oxygen ions implanted silicon samples. The depth selective measurement of XANES by recording in PEY mode and the quantitative analysis by superposition of XANES spectra were carried out to elucidate the depth profile of implanted ions. It has been revealed that the silicon nitride phase were formed in silicon after prolonged N+ irradiation and it extended over the deep part of the damaged region from the surface. On the other hand, for the O+ irradiation, silicon dioxide phase were produced only in the shallow part of the damaged region, i.e., the silicon dioxide phase likely broke off during the irradiation.

Hydatid detection using the near-infrared transmission angular spectra of porous silicon microcavity biosensors

NASA Astrophysics Data System (ADS)

Li, Peng; Jia, Zhenhong; Lü, Guodong

2017-03-01

Hydatid, which is a parasitic disease, occurs today in many regions worldwide. Because it can present a serious threat to people’s health, finding a fast, convenient, and economical means of detection is important. This paper proposes a label- and spectrophotometer-free apparatus that uses optical biological detection based on porous silicon microcavities. In this approach, the refractive index change induced by the biological reactions of a sample in a porous silicon microcavity is detected by measuring the change in the incidence angle corresponding to the maximum transmitted intensity of a near-infrared probe laser. This paper reports that the proposed method can achieve the label-free detection of 43 kDa molecular weight hydatid disease antigens with high sensitivity.

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Electron-beam-induced information storage in hydrogenated amorphous silicon devices

DOEpatents

Yacobi, B.G.

1985-03-18

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

Surface Coatings for Gas Detection via Porous Silicon

NASA Astrophysics Data System (ADS)

Ozdemir, Serdar; Li, Ji-Guang; Gole, James

2009-03-01

Nanopore covered microporous silicon interfaces have been formed via an electrochemical etch for gas sensor applications. Rapid reversible and sensitive gas sensors have been fabricated. The fabricated porous silicon (PS) gas sensors display the advantages of operation at room temperature as well as at a single, readily accessible temperature with an insensitivity to temperature drift; operation in a heat-sunk configuration, ease of coating with gas-selective materials; low cost of fabrication and operation, and the ability to rapidly assess false positives by operating the sensor in a pulsed mode. The PS surface has been modified with unique coatings on the basis of a general theory in order to achieve maximum sensitivity and selectivity. Sensing of NH3, NOx and PH3 at or below the ppm level have been observed. A typical PS nanostructure coated microstructured hybrid configuration when coated with tin oxide (NOx, CO) and gold nanostructures (NH3) provides a greatly increased sensitivity to the indicated gases. Al2O3 coating of the porous silicon using atomic layer deposition and its effect on PH3 sensing has been investigated. 20-100 nm TiO2 nanoparticles have been produced using sol-gel methods to coat PS surfaces and the effects on the selectivity and the sensitivity have been studied.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

NASA Astrophysics Data System (ADS)

Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

2017-07-01

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Silicon concentrations in UK surface waters

NASA Astrophysics Data System (ADS)

Neal, Colin; Neal, Margaret; Reynolds, Brian; Maberly, Stephen C.; May, Linda; Ferrier, Robert C.; Smith, Jennifer; Parker, Julie E.

2005-03-01

This paper describes the variations in silicon concentrations in UK waters for a wide range of catchment systems (near pristine, rural, and agricultural and urban impacted systems). The paper largely concerns silicon levels in streams, rivers and lakes based on extensive data collected as part of several research and monitoring initiatives of national and international standing. For a detailed study of an upland catchment in mid-Wales, information on atmospheric inputs and groundwater chemistries is provided to supply background information to cross link to the surface water chemistry. Several hundred streams/rivers and lakes are dealt with within the study, dealing with the main types of freshwater riverine and lacustrine environments. The streams/rivers vary from small ephemeral runoff to the major rivers of the UK. The geographical location of sites vary from local sites in mid-Wales, to regional studies across Scotland, to the major eastern UK rivers entering the North Sea and to acid sensitive upland sites across Wales, the English Lake District, Scotland and Northern Ireland. The surface waters range in silicon concentration from 0 to 19 mg-Si l -1 (average for individual sites vary between 0.7 and 7.6 mg-Si l -1) and there are some clear variations which link to two primary processes (1) the relative inputs of groundwaters enriched in silicon and near surface waters more depleted in silicon and (2) plankton uptake of silicon during the summer months under baseflow conditions. Thermodynamic analysis reveals that the waters are approximately saturated with respect to either quartz or chalcedony except for two circumstances when undersaturation occurs. Firstly, undersaturation occurs at pH less than 5.5 in the upland areas and this is because the waters are mainly sourced from the acidic organic soils which are depleted in inorganic minerals. Secondly, undersaturation occurs in the lowland rivers when biological activity is at its highest and this leads to

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Silicon (100)/SiO2 by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the basemore » material for subsequent growth of templated carbon nanotubes.« less

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Photonic Crystal Sensors Based on Porous Silicon

PubMed Central

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Antireflection Coatings for Silicon in the 2.5-50-microm Region.

PubMed

Sherman, G H; Coleman, P D

1971-12-01

It has been found that vacuum-deposited films of CsI, AgCl, TlBr, and TlCl are useful as antireflection coatings for silicon over a broad spectral range in the infrared. Measurements performed on a plane-parallel silicon plate coated with various thicknesses of the above materials yield transmittance values ranging from 99% at lambda = 2.9 microm to 88% at lambda = 27 microm. Experimental details of the coating process and properties of the coatings are discussed.

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

PubMed Central

Al-Hardan, Naif H.; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M.; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N.

2016-01-01

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. PMID:27338381

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

PubMed

Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

2016-06-07

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

MR imaging of silicone breast implants: evaluation of prospective and retrospective interpretations and interobserver agreement.

PubMed

Quinn, S F; Neubauer, N M; Sheley, R C; Demlow, T A; Szumowski, J

1996-01-01

MR imaging was used to evaluate the integrity of silicone breast implants in 54 women with 108 implants. MR images were interpreted by relatively inexperienced readers who tried to reproduce the experiences reported in the literature. The study examines the interobserver agreement using different diagnostic signs and the influence of experience on interpretation errors. Prospective and retrospective interpretations were compared with surgical findings at the time of explanation. Diagnostic indicators, including the linguine sign, the inverted tear drop sign, the C sign, water droplets mixed with silicone, and extracapsular globules of silicone, were evaluated for diagnostic efficacy and interobserver agreement. The prospective sensitivity and specificity were 87% and 78%, respectively. With the retrospective interpretations, the sensitivity and specificity increased to 93% and 92%, respectively. Most of the prospective false-positive interpretations were due to misinterpreting radial folds as signs of implant rupture. Six implants interpreted retrospectively as false positives had gross amounts of silicone around the implants at surgery but there were no obvious rents in the implant shells. There was fair to excellent interobserver agreement with the individual diagnostic signs except for extracapsular globules of silicone. All of the signs had specificities of greater than 90%. The sensitivities of the individual signs were less than the overall retrospective sensitivity. With experience, the sensitivity improved from 87% to 93% and the specificity improved from 78% to 92%. This study helps substantiate the use of diagnostic signs used by other authors to detect silicone loss from breast implants by MR imaging; however, questions remain as to the clinical role of MR imaging in evaluating implants for silicone loss.

Sensitive Detection of Protein and miRNA Cancer Biomarkers using Silicon-Based Photonic Crystals and A Resonance Coupling Laser Scanning Platform

PubMed Central

George, Sherine; Chaudhery, Vikram; Lu, Meng; Takagi, Miki; Amro, Nabil; Pokhriyal, Anusha; Tan, Yafang; Ferreira, Placid; Cunningham, Brian T.

2013-01-01

Enhancement of the fluorescent output of surface-based fluorescence assays by performing them upon nanostructured photonic crystal (PC) surfaces has been demonstrated to increase signal intensities by >8000×. Using the multiplicative effects of optical resonant coupling to the PC in increasing the electric field intensity experienced by fluorescent labels (“enhanced excitation”) and the spatially biased funneling of fluorophore emissions through coupling to PC resonances (“enhanced extraction”), PC enhanced fluorescence (PCEF) can be adapted to reduce the limits of detection of disease biomarker assays, and to reduce the size and cost of high sensitivity detection instrumentation. In this work, we demonstrate the first silicon-based PCEF detection platform for multiplexed biomarker assay. The sensor in this platform is a silicon-based PC structure, comprised of a SiO2 grating that is overcoated with a thin film of high refractive index TiO2 and is produced in a semiconductor foundry for low cost, uniform, and reproducible manufacturing. The compact detection instrument that completes this platform was designed to efficiently couples fluorescence excitation from a semiconductor laser to the resonant optical modes of the PC, resulting in elevated electric field strength that is highly concentrated within the region <100 nm from the PC surface. This instrument utilizes a cylindrically focused line to scan a microarray in <1 minute. To demonstrate the capabilities of this sensor-detector platform, microspot fluorescent sandwich immunoassays using secondary antibodies labeled with Cy5 for two cancer biomarkers (TNF-α and IL-3) were performed. Biomarkers were detected at concentrations as low as 0.1 pM. In a fluorescent microarray for detection of a breast cancer miRNA biomarker miR-21, the miRNA was detectable at a concentration of 0.6 pM. PMID:23963502

High-performance silicon nanowire bipolar phototransistors

NASA Astrophysics Data System (ADS)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Porous silicon based photoluminescence immunosensor for rapid and highly-sensitive detection of Ochratoxin A.

PubMed

Myndrul, Valerii; Viter, Roman; Savchuk, Maryna; Shpyrka, Nelya; Erts, Donats; Jevdokimovs, Daniels; Silamiķelis, Viesturs; Smyntyna, Valentyn; Ramanavicius, Arunas; Iatsunskyi, Igor

2018-04-15

A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Ochratoxin A (OTA) has been developed. This immunosensor was based on porous silicon (PSi) and modified by antibodies against OTA (anti-OTA). PSi layer was fabricated by metal-assisted chemical etching (MACE) procedure. Main structural parameters (pore size, layer thickness, morphology and nanograins size) and composition of PSi were investigated by means of X-Ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. PL-spectroscopy of PSi was performed at room temperature and showed a wide emission band centered at 680 ± 20nm. Protein A was covalently immobilized on the surface of PSi, which in next steps was modified by anti-OTA and BSA in this way a anti-OTA/Protein-A/PSi structure sensitive towards OTA was designed. The anti-OTA/Protein-A/PSi-based immunosensors were tested in a wide range of OTA concentrations from 0.001 upto 100ng/ml. Interaction of OTA with anti-OTA/Protein-A/PSi surface resulted in the quenching of photoluminescence in comparison to bare PSi. The limit of detection (LOD) and the sensitivity range of anti-OTA/Protein-A/PSi immunosensors were estimated. Association constant and Gibbs free energy for the interaction of anti-OTA/Protein-A/PSi with OTA were calculated and analyzed using the interaction isotherms. Response time of the anti-OTA/Protein-A/PSi-based immunosensor toward OTA was in the range of 500-700s. These findings are very promising for the development of highly sensitive, and potentially portable immunosensors suitable for fast determination of OTA in food and beverages. Copyright © 2017 Elsevier B.V. All rights reserved.

Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode

NASA Astrophysics Data System (ADS)

Liu, Wei; Guo, Hongwei; Li, Wei; Wan, Xia; Bodepudi, Srikrishna Chanakya; Shehzad, Khurram; Xu, Yang

2018-05-01

In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by a graphene-silicon (GS) junction and a neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR effects originating from the gate-dependent surface recombination and the potential-well-induced confinement of photo-carriers in the GOS region. We verified this by studying the gate-controlled GS diode, which can distinguish the photocurrent from the GS region with that from the GOS region (gate). A large peak-to-valley ratio of up to 12.1 has been obtained for the L-NDR due to gate-dependent surface recombination. Such strong L-NDR effect provides an opportunity to further engineer the optoelectronic properties of GS junctions along with exploring its potential applications in photodetectors, photo-memories, and position sensitive devices.

Pain Sensitivity is Inversely Related to Regional Grey Matter Density in the Brain

PubMed Central

Emerson, Nichole M.; Zeidan, Fadel; Lobanov, Oleg V.; Hadsel, Morten S.; Martucci, Katherine T.; Quevedo, Alexandre S.; Starr, Christopher J.; Nahman-Averbuch, Hadas; Weissman-Fogel, Irit; Granovsky, Yelena; Yarnitsky, David; Coghill, Robert C.

2014-01-01

Pain is a highly personal experience that varies substantially among individuals. In search of an anatomical correlate of pain sensitivity we used voxel-based morphometry (VBM) to investigate the relationship between grey matter density across the whole brain and inter-individual differences in pain sensitivity in 116 healthy volunteers (62 females, 54 males). Structural MRI and psychophysical data from 10 previous fMRI studies were used. Age, sex, unpleasantness ratings, scanner sequence, and sensory testing location were added to the model as covariates. Regression analysis of grey matter density across the whole brain and thermal pain intensity ratings at 49°C revealed a significant inverse relationship between pain sensitivity and grey matter density in bilateral regions of the posterior cingulate cortex, precuneus, intraparietal sulcus, and inferior parietal lobule. Unilateral regions of the left primary somatosensory cortex also exhibited this inverse relationship. No regions exhibited a positive relationship to pain sensitivity. These structural variations occurred in areas associated with the default mode network, attentional direction and shifting, as well as somatosensory processing. These findings underscore the potential importance of processes related to default mode thought and attention in shaping individual differences in pain sensitivity and indicate that pain sensitivity can potentially be predicted on the basis of brain structure. PMID:24333778

Singlet oxygen sensitizing materials based on porous silicone: photochemical characterization, effect of dye reloading and application to water disinfection with solar reactors.

PubMed

Manjón, Francisco; Santana-Magaña, Montserrat; García-Fresnadillo, David; Orellana, Guillermo

2010-06-01

Photogeneration of singlet molecular oxygen ((1)O(2)) is applied to organic synthesis (photooxidations), atmosphere/water treatment (disinfection), antibiofouling materials and in photodynamic therapy of cancer. In this paper, (1)O(2) photosensitizing materials containing the dyes tris(4,4'-diphenyl-2,2'-bipyridine)ruthenium(II) (1, RDB(2+)) or tris(4,7-diphenyl-1,10-phenanthroline)ruthenium(II) (2, RDP(2+)), immobilized on porous silicone (abbreviated RDB/pSil and RDP/pSil), have been produced and tested for waterborne Enterococcus faecalis inactivation using a laboratory solar simulator and a compound parabolic collector (CPC)-based solar photoreactor. In order to investigate the feasibility of its reuse, the sunlight-exposed RDP/pSil sensitizing material (RDP/pSil-a) has been reloaded with RDP(2+) (RDP/pSil-r). Surprisingly, results for bacteria inactivation with the reloaded material have demonstrated a 4-fold higher efficiency compared to those of either RDP/pSil-a, unused RDB/pSil and the original RDP/pSil. Surface and bulk photochemical characterization of the new material (RDP/pSil-r) has shown that the bactericidal efficiency enhancement is due to aggregation of the silicone-supported photosensitizer on the surface of the polymer, as evidenced by confocal fluorescence lifetime imaging microscopy (FLIM). Photogenerated (1)O(2) lifetimes in the wet sensitizer-doped silicone have been determined to be ten times longer than in water. These facts, together with the water rheology in the solar reactor and the interfacial production of the biocidal species, account for the more effective disinfection observed with the reloaded photosensitizing material. These results extend and improve the operational lifetime of photocatalytic materials for point-of-use (1)O(2)-mediated solar water disinfection.

A cascaded silicon Raman laser

NASA Astrophysics Data System (ADS)

Rong, Haisheng; Xu, Shengbo; Cohen, Oded; Raday, Omri; Lee, Mindy; Sih, Vanessa; Paniccia, Mario

2008-03-01

One of the major advantages of Raman lasers is their ability to generate coherent light in wavelength regions that are not easily accessible with other conventional types of lasers. Recently, efficient Raman lasing in silicon in the near-infrared region has been demonstrated, showing great potential for realizing low-cost, compact, room-temperature lasers in the mid-infrared region. Such lasers are highly desirable for many applications, ranging from trace-gas sensing, environmental monitoring and biomedical analysis, to industrial process control, and free-space communications. Here we report the first experimental demonstration of cascaded Raman lasing in silicon, opening the path to extending the lasing wavelength from the near- to mid-infrared region. Using a 1,550-nm pump source, we achieve stable, continuous-wave, second-order cascaded lasing at 1,848 nm with an output power exceeding 5 mW. The laser operates in single mode, and the laser linewidth is measured to be <2.5 MHz.

Thermophysical Property Measurements of Silicon-Transition Metal Alloys

NASA Technical Reports Server (NTRS)

Banish, R. Michael; Erwin, William R.; Sansoucie, Michael P.; Lee, Jonghyun; Gave, Matthew A.

2014-01-01

Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon-transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

Infrared bolometers with silicon nitride micromesh absorbers

NASA Technical Reports Server (NTRS)

Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

1996-01-01

Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

Silicon waveguided components for the long-wave infrared region

NASA Astrophysics Data System (ADS)

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

2006-10-01

We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .

Electron-beam-induced information storage in hydrogenated amorphous silicon device

DOEpatents

Yacobi, Ben G.

1986-01-01

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

Pain sensitivity is inversely related to regional grey matter density in the brain.

PubMed

Emerson, Nichole M; Zeidan, Fadel; Lobanov, Oleg V; Hadsel, Morten S; Martucci, Katherine T; Quevedo, Alexandre S; Starr, Christopher J; Nahman-Averbuch, Hadas; Weissman-Fogel, Irit; Granovsky, Yelena; Yarnitsky, David; Coghill, Robert C

2014-03-01

Pain is a highly personal experience that varies substantially among individuals. In search of an anatomical correlate of pain sensitivity, we used voxel-based morphometry to investigate the relationship between grey matter density across the whole brain and interindividual differences in pain sensitivity in 116 healthy volunteers (62 women, 54 men). Structural magnetic resonance imaging (MRI) and psychophysical data from 10 previous functional MRI studies were used. Age, sex, unpleasantness ratings, scanner sequence, and sensory testing location were added to the model as covariates. Regression analysis of grey matter density across the whole brain and thermal pain intensity ratings at 49°C revealed a significant inverse relationship between pain sensitivity and grey matter density in bilateral regions of the posterior cingulate cortex, precuneus, intraparietal sulcus, and inferior parietal lobule. Unilateral regions of the left primary somatosensory cortex also exhibited this inverse relationship. No regions showed a positive relationship to pain sensitivity. These structural variations occurred in areas associated with the default mode network, attentional direction and shifting, as well as somatosensory processing. These findings underscore the potential importance of processes related to default mode thought and attention in shaping individual differences in pain sensitivity and indicate that pain sensitivity can potentially be predicted on the basis of brain structure. Copyright © 2013 International Association for the Study of Pain. Published by Elsevier B.V. All rights reserved.

Angle-resolved diffraction grating biosensor based on porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Changwu; Li, Peng; Jia, Zhenhong, E-mail: jzhh@xju.edu.cn

2016-03-07

In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensormore » was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.« less

Determining Regional Sensitivity to Energy-Related Water Withdrawals in Minnesota

NASA Astrophysics Data System (ADS)

McCulloch, A.; Brauman, K. A.

2015-12-01

Minnesota has abundant freshwater resources, yet concerns about water-impacts of energy and mining development are increasing. Statewide, total annual water withdrawals have increased, and, in some watersheds, withdrawals make up a large fraction of available water. The energy and mining sectors play a critical role in determining water availability, as water is used to irrigate biofuel feedstock crops, cool thermoelectric plants, and process and transport fuels and iron ore. We evaluated the Minnesota Department of Natural Resources (DNR) Water and Reporting System (MPARS) dataset (1988-2014) to identify regions where energy and mining-related water withdrawals are high or where they are increasing. The energy and mining sectors account for over 65 percent of total water extractions in Minnesota, but this percentage is greater in some regions. In certain southern and northeastern Minnesota watersheds, these extractions account for 90 percent of total water demand. Sensitivity to these demands is not dependent on total water demand alone, and is also not uniform among watersheds. We identified and evaluated factors influencing sensitivity, including population, extraction type (surface water or groundwater), percentage of increased demand, and whether withdrawals are consumptive or not. We determined that southern Minnesota is particularly sensitive to increased water demands, because of growing biofuel and sand extraction industries (the products of which are used in hydraulic fracturing). In the last ten years, ethanol production in Minnesota has increased by 440 percent, and over fifteen refineries (each with a capacity over 1.1 billion gallons), have been built. These users primarily extract from surface water bodies within a few watersheds, compromising local supplies. As these energy-related industries continue to grow, so will the demand for freshwater resources. Determining regional sensitivity to increased demands will allow policy-makers to manage the

Imaging neuronal seal resistance on silicon chip using fluorescent voltage-sensitive dye.

PubMed

Braun, Dieter; Fromherz, Peter

2004-08-01

The electrical sheet resistance between living cells grown on planar electronic contacts of semiconductors or metals is a crucial parameter for bioelectronic devices. It determines the strength of electrical signal transduction from cells to chips and from chips to cells. We measured the sheet resistance by applying AC voltage to oxidized silicon chips and by imaging the voltage change across the attached cell membrane with a fluorescent voltage-sensitive dye. The phase map of voltage change was fitted with a planar core-coat conductor model using the sheet resistance as a free parameter. For nerve cells from rat brain on polylysine as well as for HEK293 cells and MDCK cells on fibronectin we find a similar sheet resistance of 10 MOmega. Taking into account the independently measured distance of 50 nm between chip and membrane for these cells, we obtain a specific resistance of 50 Omegacm that is indistinguishable from bulk electrolyte. On the other hand, the sheet resistance for erythrocytes on polylysine is far higher, at approximately 1.5 GOmega. Considering the distance of 10 nm, the specific resistance in the narrow cleft is enhanced to 1500 Omegacm. We find this novel optical method to be a convenient tool to optimize the interface between cells and chips for bioelectronic devices.

Controlling Thermal Gradients During Silicon Web Growth

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Mchugh, J. P.; Skutch, M. E.; Piotrowski, P. A.

1983-01-01

Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

Amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents

NASA Astrophysics Data System (ADS)

Stolyarova, Sara; Shemesh, Ariel; Aharon, Oren; Cohen, Omer; Gal, Lior; Eichen, Yoav; Nemirovsky, Yael

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

Solution-processed polycrystalline silicon on paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifunovic, M.; Ishihara, R., E-mail: r.ishihara@tudelft.nl; Shimoda, T.

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been mademore » when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.« less

Silicone Wristbands as Personal Passive Samplers

PubMed Central

2014-01-01

Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual’s exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log Kow from −0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application. PMID:24548134

Silicone wristbands as personal passive samplers.

PubMed

O'Connell, Steven G; Kincl, Laurel D; Anderson, Kim A

2014-03-18

Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual's exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log K(ow) from -0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application.

High-speed detection at two micrometres with monolithic silicon photodiodes

NASA Astrophysics Data System (ADS)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Sensitivity of WRF Regional Climate Simulations to Choice of Land Use Dataset

EPA Science Inventory

The goal of this study is to assess the sensitivity of regional climate simulations run with the Weather Research and Forecasting (WRF) model to the choice of datasets representing land use and land cover (LULC). Within a regional climate modeling application, an accurate repres...

Silicon nanopillars for field enhanced surface spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wells, Sabrina M; Merkulov, Igor A; Kravchenko, Ivan I

Silicon nanowire and nanopillar structures have continued to draw increased attention in recent years due in part to their unique optical properties. Herein, electron beam lithography combined with reactive-ion etching is used to reproducibly create individual silicon nanopillars of various sizes, shapes, and heights. Finite difference time domain numerical analysis predicts enhancements in localized fields in the vicinity of appropriately-sized and coaxially-illuminated silicon nanopillars of approximately two orders of magnitude. By analyzing experimentally measured strength of the silicon Raman phonon line (500 cm-1), it was determined that nanopillars produced field enhancement that are consistent with these predictions. Additionally, we demonstratemore » that a thin layer of Zn phthalocyanine deposited on the nanopillar surface produced prominent Raman spectra yielding enhancement factors (EFs) better than 300. Finally, silicon nanopillars of cylindrical and elliptical shapes were labeled with different fluorophors and evaluated for their surface enhanced fluorescence (SEF) capability. The EF derived from analysis of the acquired fluorescence microscopy images indicate that silicon nanopillar structures can provide enhancement comparable or even stronger than those typically achieved using plasmonic SEF structures without the drawbacks of the metal-based substrates. It is anticipated that scaled up arrays of silicon nanopillars will enable SEF assays with extremely high sensitivity, while a broader impact of the reported phenomena are anticipated in photovoltaics, subwavelength light focusing, and fundamental nanophotonics.« less

Quantitative-phase microscopy of nanosecond laser-induced micro-modifications inside silicon.

PubMed

Li, Q; Chambonneau, M; Chanal, M; Grojo, D

2016-11-20

Laser-induced permanent modification inside silicon has been recently demonstrated by using tightly focused nanosecond sources at a 1550 nm wavelength. We have developed a quantitative-phase microscope operating in the near-infrared domain to characterize the laser-induced modifications deep into silicon. By varying the number of applied laser pulses and the energy, we observe porous and densified regions in the focal region. The observed changes are associated with refractive index variations |Δn| exceeding 10^-3, enough to envision the laser writing of optical functionalities inside silicon.

Luminescence properties of Tm3+ ions single-doped YF3 materials in an unconventional excitation region.

PubMed

Chen, Yuan; Liu, Qing; Lin, Han; Yan, Xiaohong

2018-05-01

According to the spectral distribution of solar radiation at the earth's surface, under the excitation region of 1150 to 1350 nm, the up-conversion luminescence of Tm 3+ ions was investigated. The emission bands were matched well with the spectral response region of silicon solar cells, achieved by Tm 3+ ions single-doped yttrium fluoride (YF 3 ) phosphor, which was different from the conventional Tm 3+ /Yb 3+ ion couple co-doped materials. Additionally, the similar emission bands of Tm 3+ ions were achieved under excitation in the ultraviolet region. It is expected that via up-conversion and down-conversion routes, Tm 3+ -sensitized materials could convert photons to the desired wavelengths in order to reduce the energy loss of silicon solar cells, thereby enhancing the photovoltaic efficiency. Copyright © 2018 John Wiley & Sons, Ltd.

Investigation of porous silicon nanopowders functionalized by antibiotic Kanamycin, fluorophore Indocyanine Green

NASA Astrophysics Data System (ADS)

Bespalova, K.; Somov, P. A.; Spivak, Yu M.

2017-11-01

Porous silicon nanopowders for target drug delivery were obtained by electrochemical anodic etching in a hydrofluoric acid solution using the monocrystalline silicon n-type conductivity. Porous silicon powders were obtained by sonification of porous silicon layers. The powders were functionalized by antibiotic Kanamycin and fluorophore Indocyanine Green by the passive adsorption method. The peculiarities of absorption spectra in 190-600 nm region were revealed for functionalized porous silicon powders dispersions in water.

Fluorescence of silicon nanoparticles prepared by nanosecond pulsed laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chunyang, E-mail: chunyangliu@126.com; Sui, Xin; Yang, Fang

2014-03-15

A pulsed laser fabrication method is used to prepare fluorescent microstructures on silicon substrates in this paper. A 355 nm nanosecond pulsed laser micromachining system was designed, and the performance was verified and optimized. Fluorescence microscopy was used to analyze the photoluminescence of the microstructures which were formed using the pulsed laser processing technique. Photoluminescence spectra of the microstructure reveal a peak emission around 500 nm, from 370 nm laser irradiation. The light intensity also shows an exponential decay with irradiation time, which is similar to attenuation processes seen in porous silicon. The surface morphology and chemical composition of themore » microstructure in the fabricated region was also analyzed with multifunction scanning electron microscopy. Spherical particles are produced with diameters around 100 nm. The structure is compared with porous silicon. It is likely that these nanoparticles act as luminescence recombination centers on the silicon surface. The small diameter of the particles modifies the band gap of silicon by quantum confinement effects. Electron-hole pairs recombine and the fluorescence emission shifts into the visible range. The chemical elements of the processed region are also changed during the interaction between laser and silicon. Oxidation and carbonization play an important role in the enhancement of fluorescence emission.« less

Multifunctional silicon surfaces: reaction of dichlorocarbene generated from Seyferth reagent with hydrogen-terminated silicon (111) surfaces.

PubMed

Liu, Wenjun; Sharp, Ian D; Tilley, T Don

2014-01-14

Insertion of dichlorocarbene (:CCl2), generated by decomposition of the Seyferth reagent PhHgCCl2Br, into the Si-H bond of a tertiary silane to form a Si-CCl2H group is an efficient homogeneous, molecular transformation. A heterogeneous version of this reaction, between PhHgCCl2Br and a silicon (111) surface terminated by tertiary Si-H bonds, was studied using a combination of surface-sensitive infrared and X-ray photoelectron spectroscopies. The insertion of dichlorocarbene into surface Si-H bonds parallels the corresponding reaction of silanes in solution, to produce surface-bound dichloromethyl groups (Si-CCl2H) covering ∼25% of the silicon surface sites. A significant fraction of the remaining Si-H bonds on the surface was converted to Si-Cl/Br groups during the same reaction, with PhHgCCl2Br serving as a halogen atom source. The presence of two distinct environments for the chlorine atoms (Si-CCl2H and Si-Cl) and one type of bromine atom (Si-Br) was confirmed by Cl 2p, Br 3d, and C 1s X-ray photoelectron spectroscopy. The formation of reactive, halogen-terminated atop silicon sites was also verified by reaction with sodium azide or the Grignard reagent (CH3MgBr), to produce Si-N3 or Si-Me functionalities, respectively. Thus, reaction of a hydrogen-terminated silicon (111) surface with PhHgCCl2Br provides a facile route to multifunctional surfaces possessing both stable silicon-carbon and labile silicon-halogen sites, in a single pot synthesis. The reactive silicon-halogen groups can be utilized for subsequent transformations and, potentially, the construction of more complex organic-silicon hybrid systems.

System-level integration of active silicon photonic biosensors

NASA Astrophysics Data System (ADS)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

New technologies for solar energy silicon - Cost analysis of BCL process

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K.-Y.; Fang, C. S.; Lutwack, R.; Hsu, G.; Leven, H.

1980-01-01

New technologies for producing polysilicon are being developed to provide lower cost material for solar cells which convert sunlight into electricity. This article presents results for the BCL Process, which produces the solar-cell silicon by reduction of silicon tetrachloride with zinc vapor. Cost, sensitivity, and profitability analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon by the BCL Process. Profitability analysis indicates a sales price of $12.1-19.4 per kg of silicon (1980 dollars) at a 0-25 per cent DCF rate of return on investment after taxes. These results indicate good potential for meeting the goal of providing lower cost material for silicon solar cells.

Athermal Annealing of Silicon

NASA Astrophysics Data System (ADS)

Fischer, R. P.; Grun, J.; Ting, A.; Felix, C.; Peckerar, M.; Fatemi, M.; Manka, C. K.

1999-11-01

Current semiconductor annealing methods are based on thermal processes which are accompanied by diffusion that degrades the definition of device features or causes other problems. This will be a serious obstacle for the production of next-generation ultra-high density, low power semiconductor devices. Experiments underway at NRL utilize a new annealing method which is much faster than thermal annealing and does not depend upon thermal energy (J. Grun, et al)., Phys. Rev. Letters 78, 1584 (1997).. A 10 J, 30 nsec, 1.053 nm wavelength laser pulse is focussed to approximately 1 mm diameter on a silicon sample. Acoustic and shock waves propagate from the impact region, which deposit mechanical energy into the material and anneal the silicon. Experimental results will be presented on annealing neutron-transmutation-doped (NTD) and ion implanted silicon samples with impurity concentrations from 1 × 10^15-3 × 10^20/cm^3.

Regional Glacier Sensitivity to Climate Change in the Monsoonal Himalaya: Implications for Water Resources

NASA Astrophysics Data System (ADS)

Rupper, S.; Maurer, J. M.; Schaefer, J. M.; Tsering, K.; Rinzin, T.; Dorji, C.; Johnson, E. S.; Cook, E. R.

2014-12-01

The rapid retreat of many glaciers in the monsoonal Himalaya is of potential societal concern. However, the retreat pattern in the region has been very heterogeneous, likely due in part to the inherent heterogeneity of climate and glaciers within the region. Assessing the impacts of glacier change on water resources, hydroelectric power, and hazard potential requires a detailed understanding of this potentially complex spatial pattern of glacier sensitivity to climate change. Here we quantify glacier surface-mass balance and meltwater flux across the entire glacierized region of the Bhutanese watershed using a full surface-energy and -mass balance model validated with field data. We then test the sensitivity of the glaciers to climatic change and compare the results to a thirty-year record of glacier volume changes. Bhutan is chosen because it (1) sits in the bulls-eye of the monsoon, (2) has >600 glaciers that exhibit the extreme glacier heterogeneity typical of the Himalayas, and (3) faces many of the economic and hazard challenges associated with glacier changes in the Himalaya. Therefore, the methods and results from this study should be broadly applicable to other regions of the monsoonal Himalaya. Our modeling results show a complex spatial pattern of glacier sensitivity to changes in climate across the Bhutanese Himalaya. However, our results also show that <15% of the glaciers in Bhutan account for >90% of the total meltwater flux, and that these glaciers are uniformly the glaciers most sensitive to changes in temperature (and less sensitive to other climate variables). We compare these results to a thirty-year record of glacier volume changes over the same region. In particular, we extract DEMs and orthorectified imagery from 1976 historical spy satellite images and 2006 ASTER images. DEM differencing shows that the glaciers that have changed most over the past thirty years also have the highest modeled temperature sensitivity. These results suggest that

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Regional Climate Sensitivity- and Historical-Based Projections to 2100

NASA Astrophysics Data System (ADS)

Hébert, Raphaël.; Lovejoy, Shaun

2018-05-01

Reliable climate projections at the regional scale are needed in order to evaluate climate change impacts and inform policy. We develop an alternative method for projections based on the transient climate sensitivity (TCS), which relies on a linear relationship between the forced temperature response and the strongly increasing anthropogenic forcing. The TCS is evaluated at the regional scale (5° by 5°), and projections are made accordingly to 2100 using the high and low Representative Concentration Pathways emission scenarios. We find that there are large spatial discrepancies between the regional TCS from 5 historical data sets and 32 global climate model (GCM) historical runs and furthermore that the global mean GCM TCS is about 15% too high. Given that the GCM Representative Concentration Pathway scenario runs are mostly linear with respect to their (inadequate) TCS, we conclude that historical methods of regional projection are better suited given that they are directly calibrated on the real world (historical) climate.

Visualizing ecological sensitivity assessment of Huangnan, in the Three-river Region, China, based on GIS

NASA Astrophysics Data System (ADS)

Meng, Xia; Guo, Luo

2017-07-01

Huangnan Tibetan Autonomous Prefecture is located in the three-river source region (the TRSR) in the Qinghai-Tibetan Plateau, China, which is characterized with ecological sensitivity and vulnerability. In the paper, we integrated remote sensing images, field investigation and social-economic data , and with the help of analytic hierarchy process (AHP) and comprehensive index methods, a sensitivity assessment system was built to calculate ecological sensitivity scores and assign levels for the study area. Results show that: areas which are moderately or even highly ecologically sensitive account for 54.02%, distributed in south, north and northeast of study area and those that have most apparent ecological sensitivity are mainly located in Zeekog, northwest of Huangnan while other counties enjoy relatively lower sensitivity. The results will facilitate future region management and planning for decision-makers.

Friction and wear behavior of single-crystal silicon carbide in contact with titanium

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1977-01-01

Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

NASA Astrophysics Data System (ADS)

Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

2017-08-01

We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

Process Research of Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1984-01-01

A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

Imaging Neuronal Seal Resistance on Silicon Chip using Fluorescent Voltage-Sensitive Dye

PubMed Central

Braun, Dieter; Fromherz, Peter

2004-01-01

The electrical sheet resistance between living cells grown on planar electronic contacts of semiconductors or metals is a crucial parameter for bioelectronic devices. It determines the strength of electrical signal transduction from cells to chips and from chips to cells. We measured the sheet resistance by applying AC voltage to oxidized silicon chips and by imaging the voltage change across the attached cell membrane with a fluorescent voltage-sensitive dye. The phase map of voltage change was fitted with a planar core-coat conductor model using the sheet resistance as a free parameter. For nerve cells from rat brain on polylysine as well as for HEK293 cells and MDCK cells on fibronectin we find a similar sheet resistance of 10 MΩ. Taking into account the independently measured distance of 50 nm between chip and membrane for these cells, we obtain a specific resistance of 50 Ωcm that is indistinguishable from bulk electrolyte. On the other hand, the sheet resistance for erythrocytes on polylysine is far higher, at ∼1.5 GΩ. Considering the distance of 10 nm, the specific resistance in the narrow cleft is enhanced to 1500 Ωcm. We find this novel optical method to be a convenient tool to optimize the interface between cells and chips for bioelectronic devices. PMID:15298937

Referral Regions for Time-Sensitive Acute Care Conditions in the United States.

PubMed

Wallace, David J; Mohan, Deepika; Angus, Derek C; Driessen, Julia R; Seymour, Christopher M; Yealy, Donald M; Roberts, Mark M; Kurland, Kristen S; Kahn, Jeremy M

2018-03-24

Regional, coordinated care for time-sensitive and high-risk medical conditions is a priority in the United States. A necessary precursor to coordinated regional care is regions that are actionable from clinical and policy standpoints. The Dartmouth Atlas of Health Care, the major health care referral construct in the United States, uses regions that cross state and county boundaries, limiting fiscal or political ownership by key governmental stakeholders in positions to create incentive and regulate regional care coordination. Our objective is to develop and evaluate referral regions that define care patterns for patients with acute myocardial infraction, acute stroke, or trauma, yet also preserve essential political boundaries. We developed a novel set of acute care referral regions using Medicare data in the United States from 2011. For acute myocardial infraction, acute stroke, or trauma, we iteratively aggregated counties according to patient home location and treating hospital address, using a spatial algorithm. We evaluated referral political boundary preservation and spatial accuracy for each set of referral regions. The new set of referral regions, the Pittsburgh Atlas, had 326 distinct regions. These referral regions did not cross any county or state borders, whereas 43.1% and 98.1% of all Dartmouth Atlas hospital referral regions crossed county and state borders. The Pittsburgh Atlas was comparable to the Dartmouth Atlas in measures of spatial accuracy and identified larger at-risk populations for all 3 conditions. A novel and straightforward spatial algorithm generated referral regions that were politically actionable and accountable for time-sensitive medical emergencies. Copyright © 2018 American College of Emergency Physicians. Published by Elsevier Inc. All rights reserved.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Lithium-drifted silicon detector with segmented contacts

DOEpatents

Tindall, Craig S.; Luke, Paul N.

2006-06-13

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

Micropatterned arrays of porous silicon: toward sensory biointerfaces.

PubMed

Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

2011-07-01

We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Zheng, Xinyu (Inventor)

2002-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Salient Ecological Sensitive Regions of Central Western Ghats, India

NASA Astrophysics Data System (ADS)

Ramachandra, T. V.; Bharath, Setturu; Subash Chandran, M. D.; Joshi, N. V.

2018-05-01

Ecologically sensitive regions (ESRs) are the `ecological units' with the exceptional biotic and abiotic elements. Identification of ESRs considering spatially both ecological and social dimensions of environmental variables helps in ecological and conservation planning as per Biodiversity Act, 2002, Government of India. The current research attempts to integrate ecological and environmental considerations into administration, and prioritizes regions at Panchayat levels (local administrative unit) in Uttara Kannada district, Central Western Ghats, Karnataka state considering attributes (biological, Geo-climatic, Social, etc.) as ESR (1-4) through weightage score metrics. The region has the distinction of having highest forest area (80.48%) in Karnataka State, India and has been undergoing severe anthropogenic pressures impacting biogeochemistry, hydrology, food security, climate and socio-economic systems. Prioritisation of ESRs helps in the implementation of the sustainable developmental framework with the appropriate conservation strategies through the involvement of local stakeholders.

Salient Ecological Sensitive Regions of Central Western Ghats, India

NASA Astrophysics Data System (ADS)

Ramachandra, T. V.; Bharath, Setturu; Subash Chandran, M. D.; Joshi, N. V.

2018-02-01

Ecologically sensitive regions (ESRs) are the `ecological units' with the exceptional biotic and abiotic elements. Identification of ESRs considering spatially both ecological and social dimensions of environmental variables helps in ecological and conservation planning as per Biodiversity Act, 2002, Government of India. The current research attempts to integrate ecological and environmental considerations into administration, and prioritizes regions at Panchayat levels (local administrative unit) in Uttara Kannada district, Central Western Ghats, Karnataka state considering attributes (biological, Geo-climatic, Social, etc.) as ESR (1-4) through weightage score metrics. The region has the distinction of having highest forest area (80.48%) in Karnataka State, India and has been undergoing severe anthropogenic pressures impacting biogeochemistry, hydrology, food security, climate and socio-economic systems. Prioritisation of ESRs helps in the implementation of the sustainable developmental framework with the appropriate conservation strategies through the involvement of local stakeholders.

Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

NASA Astrophysics Data System (ADS)

Sato, Tadashi; Yamamoto, Kenichi; Kambara, Junji; Kitahara, Kuninori; Hara, Akito

2009-12-01

Hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) have attracted attention for application to the operation of organic light-emitting diodes (OLEDs). The monolithic integration of nc-Si:H TFTs and polycrystalline silicon (poly-Si) TFTs and the use of nc-Si:H TFTs for operating an OLED are candidate technologies to achieve OLED system-on-glass. To develop such a system, it is necessary to fabricate poly-Si films without employing thermal dehydrogenation because hydrogen needs to be maintained in the channel region of nc-Si:H TFTs. In this study, we optimized the laser dehydrogenation process as a substitute for thermal dehydrogenation by using a diode-pumped solid-state continuous-wave green laser (Nd:YVO4, 2ω=532 nm) to fabricate large lateral poly-Si films with grain sizes of 3×20 µm2. The performance of poly-Si TFTs is well known to be sensitive to the quality of poly-Si films. In order to evaluate the electrical properties of poly-Si films, TFTs were fabricated by conventional processes. The field-effect mobility, threshold voltage, and S-value of the poly-Si TFTs were 220 cm2 V-1 s-1, -1.0 V, and 0.45 V/dec, respectively. The quality of the poly-Si film fabricated in this experiment was sufficiently high for the integration of peripheral circuits.

Environmentally Sensitive Area (ESA) Grant Condition Waiver Program in Region 2

EPA Pesticide Factsheets

Starting in October 1979, EPA Region 2 applied a special condition to many wastewater facilities’ construction grants (see Federal Register, Vol. 43, No. 188, September 27, 1978) to protect Environmentally Sensitive Areas(EASs) from induced development.

All silicon electrode photocapacitor for integrated energy storage and conversion.

PubMed

Cohn, Adam P; Erwin, William R; Share, Keith; Oakes, Landon; Westover, Andrew S; Carter, Rachel E; Bardhan, Rizia; Pint, Cary L

2015-04-08

We demonstrate a simple wafer-scale process by which an individual silicon wafer can be processed into a multifunctional platform where one side is adapted to replace platinum and enable triiodide reduction in a dye-sensitized solar cell and the other side provides on-board charge storage as an electrochemical supercapacitor. This builds upon electrochemical fabrication of dual-sided porous silicon and subsequent carbon surface passivation for silicon electrochemical stability. The utilization of this silicon multifunctional platform as a combined energy storage and conversion system yields a total device efficiency of 2.1%, where the high frequency discharge capability of the integrated supercapacitor gives promise for dynamic load-leveling operations to overcome current and voltage fluctuations during solar energy harvesting.

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Cristea, D.; Meyler, B.; Yofis, S.; Shneider, Y.; Atiya, G.; Cohen-Hyams, T.; Kauffmann, Y.; Kaplan, W. D.; Eisenstein, G.

2015-01-01

We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.

Sensitivity of soil moisture initialization for decadal predictions under different regional climatic conditions in Europe

NASA Astrophysics Data System (ADS)

Khodayar, S.; Sehlinger, A.; Feldmann, H.; Kottmeier, C.

2015-12-01

The impact of soil initialization is investigated through perturbation simulations with the regional climate model COSMO-CLM. The focus of the investigation is to assess the sensitivity of simulated extreme periods, dry and wet, to soil moisture initialization in different climatic regions over Europe and to establish the necessary spin up time within the framework of decadal predictions for these regions. Sensitivity experiments consisted of a reference simulation from 1968 to 1999 and 5 simulations from 1972 to 1983. The Effective Drought Index (EDI) is used to select and quantify drought status in the reference run to establish the simulation time period for the sensitivity experiments. Different soil initialization procedures are investigated. The sensitivity of the decadal predictions to soil moisture initial conditions is investigated through the analysis of water cycle components' (WCC) variability. In an episodic time scale the local effects of soil moisture on the boundary-layer and the propagated effects on the large-scale dynamics are analysed. The results show: (a) COSMO-CLM reproduces the observed features of the drought index. (b) Soil moisture initialization exerts a relevant impact on WCC, e.g., precipitation distribution and intensity. (c) Regional characteristics strongly impact the response of the WCC. Precipitation and evapotranspiration deviations are larger for humid regions. (d) The initial soil conditions (wet/dry), the regional characteristics (humid/dry) and the annual period (wet/dry) play a key role in the time that soil needs to restore quasi-equilibrium and the impact on the atmospheric conditions. Humid areas, and for all regions, a humid initialization, exhibit shorter spin up times, also soil reacts more sensitive when initialised during dry periods. (e) The initial soil perturbation may markedly modify atmospheric pressure field, wind circulation systems and atmospheric water vapour distribution affecting atmospheric stability

Multimodality Imaging-based Evaluation of Single-Lumen Silicone Breast Implants for Rupture.

PubMed

Seiler, Stephen J; Sharma, Pooja B; Hayes, Jody C; Ganti, Ramapriya; Mootz, Ann R; Eads, Emily D; Teotia, Sumeet S; Evans, W Phil

2017-01-01

Breast implants are frequently encountered on breast imaging studies, and it is essential for any radiologist interpreting these studies to be able to correctly assess implant integrity. Ruptures of silicone gel-filled implants often occur without becoming clinically obvious and are incidentally detected at imaging. Early diagnosis of implant rupture is important because surgical removal of extracapsular silicone in the breast parenchyma and lymphatics is difficult. Conversely, misdiagnosis of rupture may prompt a patient to undergo unnecessary additional surgery to remove the implant. Mammography is the most common breast imaging examination performed and can readily depict extracapsular free silicone, although it is insensitive for detection of intracapsular implant rupture. Ultrasonography (US) can be used to assess the internal structure of the implant and may provide an economical method for initial implant assessment. Common US signs of intracapsular rupture include the "keyhole" or "noose" sign, subcapsular line sign, and "stepladder" sign; extracapsular silicone has a distinctive "snowstorm" or echogenic noise appearance. Magnetic resonance (MR) imaging is the most accurate and reliable means for assessment of implant rupture and is highly sensitive for detection of both intracapsular and extracapsular rupture. MR imaging findings of intracapsular rupture include the keyhole or noose sign, subcapsular line sign, and "linguine" sign, and silicone-selective MR imaging sequences are highly sensitive to small amounts of extracapsular silicone. © RSNA, 2017.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

High efficiency crystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Sah, C. Tang

1986-01-01

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Temperature Effect on Rheological Behavior of Silicone Oils. A Model for the Viscous Heating.

PubMed

Romano, Mario R; Cuomo, Francesca; Massarotti, Nicola; Mauro, Alessandro; Salahudeen, Mohamed; Costagliola, Ciro; Ambrosone, Luigi

2017-07-27

The rheological behavior of silicone oils, (CH 3 ) 3 SiO-[Si(CH 3 ) 2 O] n -Si(CH 3 ) 3 , and their mixtures is studied. Shear-stress measurements, in the temperature range of 293-313 K, reveal that this polymer family is a group of shear-thinning liquids with a yield stress below which no flow occurs. Experimental diagrams, i.e., shear stress versus shear rate, are satisfactorily described by the Casson fluid model over a wide range of shear rates. In order to monitor the effect of temperature on fluid properties, Casson's rheological model is reformulated using the fictitious shear rate, γ̇ f , and the infinite-shear viscosity, η ∞ , as constitutive parameters. Due to low intermolecular forces and high chain flexibility, γ̇ f varies very little when the temperature increases. For this reason, the apparent material viscosity depends on temperature only through η ∞ , which exponentially decreases until high shear rates are reached, and there is more alignment possible. Interestingly, the temperature sensitivity of this pseudoplastic behavior is the same for all of the silicone oils investigated; therefore, they can be classified according to their tendency to emulsify. Experimental results are then used to model the flow of silicone oils in a cylindrical pipe and estimate the temperature increase due to viscous heating. Numerical results show that the normalized temperature, i.e., ratio of fluid temperature to wall temperature, increases approximately 23%, and the apparent viscosity decreases drastically, going toward the center of the tube. The non-Newtonian nature of fluid is reflected in the presence of a critical region. In this region, the velocity and temperature gradients vanish. Since silicon oil is a surgical tool, we hope that the acquired physicochemical information can provide help to facilitate the removal of this material during surgical procedures.

Nano-multiplication region avalanche photodiodes and arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2011-01-01

An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

Regional teleseismic body-wave tomography with component-differential finite-frequency sensitivity kernels

NASA Astrophysics Data System (ADS)

Yu, Y.; Shen, Y.; Chen, Y. J.

2015-12-01

By using ray theory in conjunction with the Born approximation, Dahlen et al. [2000] computed 3-D sensitivity kernels for finite-frequency seismic traveltimes. A series of studies have been conducted based on this theory to model the mantle velocity structure [e.g., Hung et al., 2004; Montelli et al., 2004; Ren and Shen, 2008; Yang et al., 2009; Liang et al., 2011; Tang et al., 2014]. One of the simplifications in the calculation of the kernels is the paraxial assumption, which may not be strictly valid near the receiver, the region of interest in regional teleseismic tomography. In this study, we improve the accuracy of traveltime sensitivity kernels of the first P arrival by eliminating the paraxial approximation. For calculation efficiency, the traveltime table built by the Fast Marching Method (FMM) is used to calculate both the wave vector and the geometrical spreading at every grid in the whole volume. The improved kernels maintain the sign, but with different amplitudes at different locations. We also find that when the directivity of the scattered wave is being taken into consideration, the differential sensitivity kernel of traveltimes measured at the vertical and radial component of the same receiver concentrates beneath the receiver, which can be used to invert for the structure inside the Earth. Compared with conventional teleseismic tomography, which uses the differential traveltimes between two stations in an array, this method is not affected by instrument response and timing errors, and reduces the uncertainty caused by the finite dimension of the model in regional tomography. In addition, the cross-dependence of P traveltimes to S-wave velocity anomaly is significant and sensitive to the structure beneath the receiver. So with the component-differential finite-frequency sensitivity kernel, the anomaly of both P-wave and S-wave velocity and Vp/Vs ratio can be achieved at the same time.

Bright long-lived luminescence of silicon nanocrystals sensitized by two-photon absorbing antenna

PubMed Central

Ravotto, Luca; Chen, Qi; Ma, Yuguo; Vinogradov, Sergei A.; Locritani, Mirko; Bergamini, Giacomo; Negri, Fabrizia; Yu, Yixuan; Korgel, Brian A.; Ceroni, Paola

2017-01-01

Summary Silicon nanocrystals of the average diameter of 5 nm, functionalized with 4,7-di(2-thienyl)-2,1,3-benzothiadiazole chromophores (TBT) and dodecyl chains, exhibit near-infrared emission upon one-photon (1P) excitation at 515 nm and two-photon (2P) excitation at 960 nm. By using TBT chromophores as an antenna we were able to enhance both 1P and 2P absorption cross-sections of the silicon nanocrystals to more efficiently excite their long-lived luminescence. These results chart a path to two-photon-excitable imaging probes with long-lived oxygen-independent luminescence - a rare combination of properties that should allow for a substantial increase in imaging contrast. PMID:28966989

Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays.

PubMed

Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P

2017-11-15

Charge-coupled devices (CCDs) are a well-established imaging technology in the visible and x-ray frequency ranges. However, the small quantum photon energies of terahertz radiation have hindered the use of this mature semiconductor technological platform in this frequency range, leaving terahertz imaging totally dependent on low-resolution bolometer technologies. Recently, it has been shown that silicon CCDs can detect terahertz photons at a high field, but the detection sensitivity is limited. Here we show that silicon, complementary metal-oxide-semiconductor (CMOS) technology offers enhanced detection sensitivity of almost two orders of magnitude, compared to CCDs. Our findings allow us to extend the low-frequency terahertz cutoff to less than 2 THz, nearly closing the technological gap with electronic imagers operating up to 1 THz. Furthermore, with the silicon CCD/CMOS technology being sensitive to mid-infrared (mid-IR) and the x-ray ranges, we introduce silicon as a single detector platform from 1 EHz to 2 THz. This overcomes the present challenge in spatially overlapping a terahertz/mid-IR pump and x-ray probe radiation at facilities such as free electron lasers, synchrotron, and laser-based x-ray sources.

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

NASA Astrophysics Data System (ADS)

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s-1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'.

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling.

PubMed

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-28

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 10 3 to 10 4  s -1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones.This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'. © 2016 The Author(s).

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

PubMed Central

Erzar, Benjamin

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s−1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual–Forquin–Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue ‘Experimental testing and modelling of brittle materials at high strain rates’. PMID:27956504

Sensitivity of simulated maize crop yields to regional climate in the Southwestern United States

NASA Astrophysics Data System (ADS)

Kim, S.; Myoung, B.; Stack, D.; Kim, J.; Hatzopoulos, N.; Kafatos, M.

2013-12-01

The sensitivity of maize yield to the regional climate in the Southwestern United States (SW US) has been investigated by using a crop-yield simulation model (APSIM) in conjunction with meteorological forcings (daily minimum and maximum temperature, precipitation, and radiation) from the North American Regional Reanalysis (NARR) dataset. The primary focus of this study is to look at the effects of interannual variations of atmospheric components on the crop productivity in the SW US over the 21-year period (1991 to 2011). First of all, characteristics and performance of APSIM was examined by comparing simulated maize yields with observed yields from United States Department of Agriculture (USDA) and the leaf-area index (LAI) from MODIS satellite data. Comparisons of the simulated maize yield with the available observations show that the crop model can reasonably reproduce observed maize yields. Sensitivity tests were performed to assess the relative contribution of each climate driver to regional crop yield. Sensitivity experiments show that potential crop production responds nonlinearly to climate drivers and the yield sensitivity varied among geographical locations depending on their mean climates. Lastly, a detailed analysis of both the spatial and temporal variations of each climate driver in the regions where maize is actually grown in three states (CA, AZ, and NV) in the SW US was performed.

Vegetation sensitivity to global anthropogenic carbon dioxide emissions in a topographically complex region

USGS Publications Warehouse

Diffenbaugh, N.S.; Sloan, L.C.; Snyder, M.A.; Bell, J.L.; Kaplan, J.; Shafer, S.L.; Bartlein, P.J.

2003-01-01

Anthropogenic increases in atmospheric carbon dioxide (CO2) concentrations may affect vegetation distribution both directly through changes in photosynthesis and water-use efficiency, and indirectly through CO2-induced climate change. Using an equilibrium vegetation model (BIOME4) driven by a regional climate model (RegCM2.5), we tested the sensitivity of vegetation in the western United States, a topographically complex region, to the direct, indirect, and combined effects of doubled preindustrial atmospheric CO2 concentrations. Those sensitivities were quantified using the kappa statistic. Simulated vegetation in the western United States was sensitive to changes in atmospheric CO2 concentrations, with woody biome types replacing less woody types throughout the domain. The simulated vegetation was also sensitive to climatic effects, particularly at high elevations, due to both warming throughout the domain and decreased precipitation in key mountain regions such as the Sierra Nevada of California and the Cascade and Blue Mountains of Oregon. Significantly, when the direct effects of CO2 on vegetation were tested in combination with the indirect effects of CO2-induced climate change, new vegetation patterns were created that were not seen in either of the individual cases. This result indicates that climatic and nonclimatic effects must be considered in tandem when assessing the potential impacts of elevated CO2 levels.

Electrochemical Fabrication of Nanostructures on Porous Silicon for Biochemical Sensing Platforms.

PubMed

Ko, Euna; Hwang, Joonki; Kim, Ji Hye; Lee, Joo Heon; Lee, Sung Hwan; Tran, Van-Khue; Chung, Woo Sung; Park, Chan Ho; Choo, Jaebum; Seong, Gi Hun

2016-01-01

We present a method for the electrochemical patterning of gold nanoparticles (AuNPs) or silver nanoparticles (AgNPs) on porous silicon, and explore their applications in: (1) the quantitative analysis of hydroxylamine as a chemical sensing electrode and (2) as a highly sensitive surface-enhanced Raman spectroscopy (SERS) substrate for Rhodamine 6G. For hydroxylamine detection, AuNPs-porous silicon can enhance the electrochemical oxidation of hydroxylamine. The current changed linearly for concentrations ranging from 100 μM to 1.32 mM (R(2) = 0.995), and the detection limit was determined to be as low as 55 μM. When used as SERS substrates, these materials also showed that nanoparticles decorated on porous silicon substrates have more SERS hot spots than those decorated on crystalline silicon substrates, resulting in a larger SERS signal. Moreover, AgNPs-porous silicon provided five-times higher signal compared to AuNPs-porous silicon. From these results, we expect that nanoparticles decorated on porous silicon substrates can be used in various types of biochemical sensing platforms.

Process feasibility study in support of silicon material task 1

NASA Technical Reports Server (NTRS)

Li, K. Y.; Hansen, K. C.; Yaws, C. L.

1978-01-01

Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

The Effects of Silicone Contamination on Bond Performance of Various Bond Systems

NASA Technical Reports Server (NTRS)

Anderson, G. L.; Stanley, S. D.; Young, G. L.; Brown, R. A.; Evans, K. B.; Wurth, L. A.

2012-01-01

The sensitivity to silicone contamination of a wide variety of adhesive bond systems is discussed. Generalizations regarding factors that make some bond systems more sensitive to contamination than others are inferred and discussed. The effect of silane adhesion promoting primer on the contamination sensitivity of two epoxy/steel bond systems is also discussed.

High-sensitive computed tomography system using a silicon-PIN x-ray diode

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Sato, Yuich; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2012-10-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of 1.91 mA was developed using a silicon-PIN X-ray diode (Si-PIN-XD). The Si-PIN-XD is a selected high-sensitive Si-PIN photodiode (PD) for detecting X-ray photons. X-ray photons are detected directly using the Si-PIN-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to differentiator with a time constant of 1 μs to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 1.91 mA and 100 kV, respectively, and gadolinium K-edge CT was carried out using filtered X-ray spectra with a peak energy of 52 keV.

Photophysical properties of blue – emitting silicon nanoparticles

PubMed Central

Portolés, Manuel J. Llansola; Nieto, Felipe Rodriguez; Soria, Delia B.; Amalvy, Javier I.; Peruzzo, Pablo J.; Mártire, Daniel O.; Kotler, Mónica; Holub, Oliver; Gonzalez, Mónica C.

2012-01-01

Silicon nanoparticles with strong blue photoluminescence were synthesized by electrochemical etching of silicon wafers and ultrasonically removed under N2 atmosphere in organic solvents to produce colloids. Thermal treatment leads to the formation of colloidal Si particles of 3 ± 1 nm diameter, which upon excitation with 340 – 380 nm light exhibited room temperature luminescence in the range from 400 to 500 nm. The emission and the one- and two-photon excitation spectra of the particles are not sensitive to surface functionalization with methyl 2-methylprop-2-enoate. However, the derivatized particles show higher emission quantum yields in air-saturated suspensions (44%) than the underivatized particles (27%), as well as higher stability of its dispersions. FTIR and XPS spectra indicate a significant surface oxidation of the particles. The Si:O:C ratio at the surface of the derivatized particles estimated from XPS is Si3O6(C5O2Hy)1, with y = 7 - 8. Vibronic spacing is observed in both the emission and excitation spectra. The information obtained from one-photon excitation experiments (emission and excitation spectra, photoluminescence quantum yields, luminescence decay lifetimes and anisotropy correlation lifetimes), as well as from two-photon excitation fluorescence correlation spectroscopy (brightness and diffusion coefficients) and TEM indicate that the blue-emitting particles are monodisperse and ball-shaped. Particle size clearly determines the emission and excitation spectral region, as expected from quantum confinement, but the presence and extent of Si-O species on the silicon networks seem crucial for determining the spectrum features and intensity of emission. The nanoparticles could hold great potential as quantum dots for applications as luminescence sensors in biology and environmental science. PMID:22866180

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

NASA Astrophysics Data System (ADS)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Flexible single-crystal silicon nanomembrane photonic crystal cavity.

PubMed

Xu, Xiaochuan; Subbaraman, Harish; Chakravarty, Swapnajit; Hosseini, Amir; Covey, John; Yu, Yalin; Kwong, David; Zhang, Yang; Lai, Wei-Cheng; Zou, Yi; Lu, Nanshu; Chen, Ray T

2014-12-23

Flexible inorganic electronic devices promise numerous applications, especially in fields that could not be covered satisfactorily by conventional rigid devices. Benefits on a similar scale are also foreseeable for silicon photonic components. However, the difficulty in transferring intricate silicon photonic devices has deterred widespread development. In this paper, we demonstrate a flexible single-crystal silicon nanomembrane photonic crystal microcavity through a bonding and substrate removal approach. The transferred cavity shows a quality factor of 2.2×10(4) and could be bent to a curvature of 5 mm radius without deteriorating the performance compared to its counterparts on rigid substrates. A thorough characterization of the device reveals that the resonant wavelength is a linear function of the bending-induced strain. The device also shows a curvature-independent sensitivity to the ambient index variation.

High surface area silicon materials: fundamentals and new technology.

PubMed

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Calibration test of the temperature and strain sensitivity coefficient in regional reference grating method

NASA Astrophysics Data System (ADS)

Wu, Jing; Huang, Junbing; Wu, Hanping; Gu, Hongcan; Tang, Bo

2014-12-01

In order to verify the validity of the regional reference grating method in solve the strain/temperature cross sensitive problem in the actual ship structural health monitoring system, and to meet the requirements of engineering, for the sensitivity coefficients of regional reference grating method, national standard measurement equipment is used to calibrate the temperature sensitivity coefficient of selected FBG temperature sensor and strain sensitivity coefficient of FBG strain sensor in this modal. And the thermal expansion sensitivity coefficient of the steel for ships is calibrated with water bath method. The calibration results show that the temperature sensitivity coefficient of FBG temperature sensor is 28.16pm/°C within -10~30°C, and its linearity is greater than 0.999, the strain sensitivity coefficient of FBG strain sensor is 1.32pm/μɛ within -2900~2900μɛ whose linearity is almost to 1, the thermal expansion sensitivity coefficient of the steel for ships is 23.438pm/°C within 30~90°C, and its linearity is greater than 0.998. Finally, the calibration parameters are used in the actual ship structure health monitoring system for temperature compensation. The results show that the effect of temperature compensation is good, and the calibration parameters meet the engineering requirements, which provide an important reference for fiber Bragg grating sensor is widely used in engineering.

Large area sheet task. Advanced dendritic web growth development. [silicon films

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Silicone metalization

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter [Pleasanton, CA; Hamilton, Julie [Tracy, CA

2006-12-05

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Silicone metalization

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Photoluminescence of Porous Silicon-Zinc Oxide Hybrid structures

NASA Astrophysics Data System (ADS)

Olenych, I. B.; Monastyrskii, L. S.; Luchechko, A. P.

2017-03-01

Arrays of ZnO nanostructures, which are optically transparent in the visible range, were grown on the surface of porous silicon by electrochemical deposition. Photoluminescence excitation and emission spectra of the obtained hybrid structures were investigated in 220-450 and 400-800 nm regions, respectively. It is established that multicolor emission is formed by combining the luminescence bands of porous silicon and zinc oxide. The possibility of controlling the photoluminescence spectra by changing the excitation energy is demonstrated. It is revealed that thermal annealing has an effect on the luminescent properties of porous silicon/zinc oxide hybrid structures. Thermal processing at 500°C leads to a sharp decrease of long-wavelength luminescence associated with porous silicon and to an increase of short-wavelength luminescence intensity related to zinc oxide.

Novel Bonding Technology for Hermetically Sealed Silicon Micropackage

NASA Astrophysics Data System (ADS)

Lee, Duck-Jung; Ju, Byeong-Kwon; Choi, Woo-Beom; Jeong, Jee-Won; Lee, Yun-Hi; Jang, Jin; Lee, Kwang-Bae; Oh, Myung-Hwan

1999-01-01

We performed glass-to-silicon bonding and fabricated a hermetically sealed silicon wafer using silicon direct bonding followed by anodic bonding (SDAB). The hydrophilized glass and silicon wafers in solution were dried and initially bonded in atmosphere as in the silicon direct bonding (SDB) process, but annealing at high temperature was not performed. Anodic bonding was subsequently carried out for the initially bonded specimens. Then the wafer pairs bonded by the SDAB method were different from those bonded by the anodic bonding process only. The effects of the bonding process on the bonded area and tensile strength were investigated as functions of bonding temperature and voltage. Using scanning electron microscopy (SEM), the cross-sectional view of the bonded interface region was observed. In order to investigate the migration of the sodium ions in the bonding process, the concentration of the bonded glass was compared with that of standard glass. The specimen bonded using the SDAB process had higher efficiency than that using the anodic bonding process only.

Metal electrode for amorphous silicon solar cells

DOEpatents

Williams, Richard

1983-01-01

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martini, R., E-mail: roberto.martini@imec.be; imec, Kapeldreef 75, 3001 Leuven; Kepa, J.

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process.more » A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.« less

Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers

PubMed Central

Dorvel, Brian R.; Reddy, Bobby; Go, Jonghyun; Guevara, Carlos Duarte; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

2012-01-01

Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in Point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFET’s has been small oligonucleotides, more specifically microRNA (miRNA). MicroRNA’s are small RNA oligonucleotides which bind to messenger RNA’s, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO2 dielectric based silicon nanowires for biosensing applications. Here we demonstrate sensing of single stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100fM detection levels of miR-10b DNA analogue, with a theoretical limit of detection of 1fM. Moreover, the non-complementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform. PMID:22695179

Analysis of asymmetric resonance response of thermally excited silicon micro-cantilevers for mass-sensitive nanoparticle detection

NASA Astrophysics Data System (ADS)

Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Suryo Wasisto, Hutomo; Uhde, Erik; Peiner, Erwin

2017-06-01

In this paper, the asymmetric resonance frequency (f 0) responses of thermally in-plane excited silicon cantilevers for a pocket-sized, cantilever-based airborne nanoparticle detector (Cantor) are analysed. By measuring the shift of f 0 caused by the deposition of nanoparticles (NPs), the cantilevers are used as a microbalance. The cantilever sensors are low cost manufactured from silicon by bulk-micromachining techniques and contain an integrated p-type heating actuator and a sensing piezoresistive Wheatstone bridge. f 0 is tracked by a homemade phase-locked loop (PPL) for real-time measurements. To optimize the sensor performance, a new cantilever geometry was designed, fabricated and characterized by its frequency responses. The most significant characterisation parameters of our application are f 0 and the quality factor (Q), which have high influences on sensitivity and efficiency of the NP detector. Regarding the asymmetric resonance signal, a novel fitting function based on the Fano resonance replacing the conventionally used function of the simple harmonic oscillator and a method to calculate Q by its fitting parameters were developed for a quantitative evaluation. To obtain a better understanding of the resonance behaviours, we analysed the origin of the asymmetric line shapes. Therefore, we compared the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator. In correspondence to the Fano effect, we could reconstruct the measured resonance curves by coupling two signals with constant amplitude and the expected signal of the cantilever, respectively. Moreover, the phase of the measurement signal can be analysed by this method, which is important to understand the locking process of the PLL circuit. Besides the frequency analysis, experimental results and calibration measurements with different particle types are presented. Using the described analysis method, decent results to optimize a next

Fiber-pigtailed silicon photonic sensors for methane leak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teng, Chu; Xiong, Chi; Zhang, Eric

We present comprehensive characterization of silicon photonic sensors for methane leak detection. Sensitivity of 40 ppmv after 1 second integration is reported. Fourier domain characterization of on-chip etalon drifts is used for further sensor improvement.

New silicon cell design concepts for 20 percent AMI efficiency

NASA Technical Reports Server (NTRS)

Wolf, M.

1982-01-01

The basic design principles for obtaining high efficiency in silicon solar cells are reviewed. They critically involve very long minority carrier lifetimes, not so much to attain high collection efficiency, but primarily for increased output voltages. Minority carrier lifetime, however, is sensitive to radiation damage, and particularly in low resistivity silicon, on which the high efficiency design is based. Radiation resistant space cells will therefore have to follow differing design principles than high efficiency terrestrial cells.

Differential sensitivity to regional-scale drought in six central US grasslands.

PubMed

Knapp, Alan K; Carroll, Charles J W; Denton, Elsie M; La Pierre, Kimberly J; Collins, Scott L; Smith, Melinda D

2015-04-01

Terrestrial ecosystems often vary dramatically in their responses to drought, but the reasons for this are unclear. With climate change forecasts for more frequent and extensive drought in the future, a more complete understanding of the mechanisms that determine differential ecosystem sensitivity to drought is needed. In 2012, the Central US experienced the fourth largest drought in a century, with a regional-scale 40% reduction in growing season precipitation affecting ecosystems ranging from desert grassland to mesic tallgrass prairie. This provided an opportunity to assess ecosystem sensitivity to a drought of common magnitude in six native grasslands. We tested the prediction that drought sensitivity is inversely related to mean annual precipitation (MAP) by quantifying reductions in aboveground net primary production (ANPP). Long-term ANPP data available for each site (mean length = 16 years) were used as a baseline for calculating reductions in ANPP, and drought sensitivity was estimated as the reduction in ANPP per millimeter reduction in precipitation. Arid grasslands were the most sensitive to drought, but drought responses and sensitivity varied by more than twofold among the six grasslands, despite all sites experiencing 40% reductions in growing season precipitation. Although drought sensitivity generally decreased with increasing MAP as predicted, there was evidence that the identity and traits of the dominant species, as well as plant functional diversity, influenced sensitivity. A more comprehensive understanding of the mechanisms leading to differences in drought sensitivity will require multi-site manipulative experiments designed to assess both biotic and abiotic determinants of ecosystem sensitivity.

Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

NASA Technical Reports Server (NTRS)

Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

1999-01-01

The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1986-01-01

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor

NASA Astrophysics Data System (ADS)

Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.

2018-01-01

Several trace gases such as H2O, CO, CO2, NO, N2O, NO2 and CH4 strongly absorb in the mid-IR spectral region due to their fundamental rotational and vibrational transitions. In this work, we propose an evanescent field absorption gas sensor based on silicon/silicon dioxide slot waveguide at 3.39 μm for sensing of methane gas. These waveguides can provide the highest evanescent field ratio (EFR) > 47% with adequate dimensions. Higher EFR values often come at an expense of higher propagation losses. These waveguides have relatively higher losses as compared to conventional waveguides, such as rib and slab waveguides, as these fundamental losses are static and the proposed sensing mechanism is established on the incremental loss due to the absorption of the gas. Therefore, incident power can always be incremented to compensate the waveguide losses.

Sensitivity and accuracy of hybrid fluorescence-mediated tomography in deep tissue regions.

PubMed

Rosenhain, Stefanie; Al Rawashdeh, Wa'el; Kiessling, Fabian; Gremse, Felix

2017-09-01

Fluorescence-mediated tomography (FMT) enables noninvasive assessment of the three-dimensional distribution of near-infrared fluorescence in mice. The combination with micro-computed tomography (µCT) provides anatomical data, enabling improved fluorescence reconstruction and image analysis. The aim of our study was to assess sensitivity and accuracy of µCT-FMT under realistic in vivo conditions in deeply-seated regions. Accordingly, we acquired fluorescence reflectance images (FRI) and µCT-FMT scans of mice which were prepared with rectal insertions with different amounts of fluorescent dye. Default and high-sensitivity scans were acquired and background signal was analyzed for three FMT channels (670 nm, 745 nm, and 790 nm). Analysis was performed for the original and an improved FMT reconstruction using the µCT data. While FRI and the original FMT reconstruction could detect 100 pmol, the improved FMT reconstruction could detect 10 pmol and significantly improved signal localization. By using a finer sampling grid and increasing the exposure time, the sensitivity could be further improved to detect 0.5 pmol. Background signal was highest in the 670 nm channel and most prominent in the gastro-intestinal tract and in organs with high relative amounts of blood. In conclusion, we show that µCT-FMT allows sensitive and accurate assessment of fluorescence in deep tissue regions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficiency of silicon solar cells containing chromium

DOEpatents

Frosch, Robert A. Administrator of the National Aeronautics and Space; Salama, Amal M.

1982-01-01

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Neutron radiation tolerance of Au-activated silicon

NASA Technical Reports Server (NTRS)

Joyner, W. T.

1987-01-01

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Direct-patterned optical waveguides on amorphous silicon films

DOEpatents

Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

2005-08-02

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

1996-01-01

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

PubMed

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

NASA Astrophysics Data System (ADS)

Horisberger, R.

1990-03-01

It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking.

Optothermal response of a single silicon nanotip

NASA Astrophysics Data System (ADS)

Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

2018-02-01

The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

Thermally-isolated silicon-based integrated circuits and related methods

DOEpatents

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Demonstration of near infrared gas sensing using gold nanodisks on functionalized silicon.

PubMed

Rodríguez-Cantó, P J; Martínez-Marco, M; Rodríguez-Fortuño, F J; Tomás-Navarro, B; Ortuño, R; Peransí-Llopis, S; Martínez, A

2011-04-11

In this work, we demonstrate experimentally the use of an array of gold nanodisks on functionalized silicon for chemosensing purposes. The metallic nanostructures are designed to display a very strong plasmonic resonance in the infrared regime, which results in highly sensitive sensing. Unlike usual experiments which are based on the functionalization of the metal surface, we functionalized here the silicon substrate. This silicon surface was modified chemically by buildup of an organosilane self-assembled monolayer (SAM) containing isocyanate as functional group. These groups allow for an easy surface regeneration by simple heating, thanks to the thermally reversible interaction isocyanate-analyte, which allows the cyclic use of the sensor. The technique showed a high sensitivity to surface binding events in gas and allowed the surface regeneration by heating of the sensor at 150 °C. A relative wavelength shift ∆λ(max)λ(0)=0.027 was obtained when the saturation level was reached. © 2011 Optical Society of America

A layered microchip conductance detector with through-layer access to detection fields and high sensitivity to dielectric constant.

PubMed

Suganuma, Y; Dhirani, A-A

2011-04-01

The present study explores a novel apertured microchip conductance detector (AMCD) that is sensitive to dielectric constant. Fashioned on silicon oxide/silicon using optical microlithography, the detector has novel parallel-plate geometry with a top mesh electrode, a middle apertured insulator, and a bottom conducting electrode. This monolithic apertured architecture is planar and may be provided with a thin insulator layer enabling large capacitances, while the top mesh electrode and middle apertured-insulator enable access to regions of the capacitor where electric fields are strong. Hence, the detector is sensitive yet mechanically robust. To test its response, the AMCD was immersed in various solvents, namely water, methanol, acetonitrile, and hexanes. Its response was found to vary in proportion to the solvents' respective dielectric constants. The AMCD was also able to distinguish quantitatively the presence of various molecules in solution, including molecules with chromophores [such as acetylsalicylic acid (ASA)] in methanol and those without chrompohores [such as polyethylene glycol 200 Daltons (PEG200)] in methanol or water. The universal nature of dielectric constant and the microchip detector's sensitivity point to a wide range of potential applications. © 2011 American Institute of Physics

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

NASA Astrophysics Data System (ADS)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

NASA Astrophysics Data System (ADS)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

Surface property modification of silicon

NASA Technical Reports Server (NTRS)

Danyluk, S.

1984-01-01

The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

Tritiated amorphous silicon films and devices

NASA Astrophysics Data System (ADS)

Kosteski, Tome

The do saddle-field glow discharge deposition technique has been used to bond tritium within an amorphous silicon thin film network using silane and elemental tritium in the glow discharge. The concentration of tritium is approximately 7 at. %. Minimal outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) at room temperature suggests that tritium is bonded stably. Tritium effusion only occurred at temperatures above the film's growth temperature. The radioactive decay of tritium results in the production of high-energy beta particles. Each beta particle can generate on average approximately 1300 electron-hole pairs in a-Si:H:T. Electrical conductivity of a-Si:H:T is shown to be due to a thermally activated process and due to the generation of excess carriers by the beta particles. p-i-n betavoltaic devices have been made with a-Si:H:T in the intrinsic (i-) region. The i-region consisted of either a-Si:H:T, or a thin section of a-Si:H:T (a Delta layer) sandwiched between undoped hydrogenated amorphous silicon (a-Si:H). The excess carriers generated in the i-region are separated by the device's built-in electric field. Short-circuit currents (Isc ), open-circuit voltages (Voc), and power have been measured and correlated to the generation of excess carriers in the i-region. Good devices were made at a substrate temperature of 250°C and relatively large flow rates of silane and tritium; this ensures that there are more monohydride bonds than dihydride bonds. Under dark conditions, Isc, and Voc have been found to decrease rapidly. This is consistent with the production of silicon neutral dangling bonds (5 x 1017cm-3 per day) from the loss of tritium due to its transmutation into helium. Dangling bonds reduce carrier lifetime and weaken the electric field in the i-region. The short-circuit current from Delta layer devices decreased more slowly and settled to higher values for narrower Delta layers. This is because the dangling bonds are

Face processing regions are sensitive to distinct aspects of temporal sequence in facial dynamics.

PubMed

Reinl, Maren; Bartels, Andreas

2014-11-15

Facial movement conveys important information for social interactions, yet its neural processing is poorly understood. Computational models propose that shape- and temporal sequence sensitive mechanisms interact in processing dynamic faces. While face processing regions are known to respond to facial movement, their sensitivity to particular temporal sequences has barely been studied. Here we used fMRI to examine the sensitivity of human face-processing regions to two aspects of directionality in facial movement trajectories. We presented genuine movie recordings of increasing and decreasing fear expressions, each of which were played in natural or reversed frame order. This two-by-two factorial design matched low-level visual properties, static content and motion energy within each factor, emotion-direction (increasing or decreasing emotion) and timeline (natural versus artificial). The results showed sensitivity for emotion-direction in FFA, which was timeline-dependent as it only occurred within the natural frame order, and sensitivity to timeline in the STS, which was emotion-direction-dependent as it only occurred for decreased fear. The occipital face area (OFA) was sensitive to the factor timeline. These findings reveal interacting temporal sequence sensitive mechanisms that are responsive to both ecological meaning and to prototypical unfolding of facial dynamics. These mechanisms are temporally directional, provide socially relevant information regarding emotional state or naturalness of behavior, and agree with predictions from modeling and predictive coding theory. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

Two-step sensitivity testing of parametrized and regionalized life cycle assessments: methodology and case study.

PubMed

Mutel, Christopher L; de Baan, Laura; Hellweg, Stefanie

2013-06-04

Comprehensive sensitivity analysis is a significant tool to interpret and improve life cycle assessment (LCA) models, but is rarely performed. Sensitivity analysis will increase in importance as inventory databases become regionalized, increasing the number of system parameters, and parametrized, adding complexity through variables and nonlinear formulas. We propose and implement a new two-step approach to sensitivity analysis. First, we identify parameters with high global sensitivities for further examination and analysis with a screening step, the method of elementary effects. Second, the more computationally intensive contribution to variance test is used to quantify the relative importance of these parameters. The two-step sensitivity test is illustrated on a regionalized, nonlinear case study of the biodiversity impacts from land use of cocoa production, including a worldwide cocoa products trade model. Our simplified trade model can be used for transformable commodities where one is assessing market shares that vary over time. In the case study, the highly uncertain characterization factors for the Ivory Coast and Ghana contributed more than 50% of variance for almost all countries and years examined. The two-step sensitivity test allows for the interpretation, understanding, and improvement of large, complex, and nonlinear LCA systems.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

NASA Technical Reports Server (NTRS)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Combined glutamate and glutamine levels in pain-processing brain regions are associated with individual pain sensitivity.

PubMed

Zunhammer, Matthias; Schweizer, Lauren M; Witte, Vanessa; Harris, Richard E; Bingel, Ulrike; Schmidt-Wilcke, Tobias

2016-10-01

The relationship between glutamate and γ-aminobutyric acid (GABA) levels in the living human brain and pain sensitivity is unknown. Combined glutamine/glutamate (Glx), as well as GABA levels can be measured in vivo with single-voxel proton magnetic resonance spectroscopy. In this cross-sectional study, we aimed at determining whether Glx and/or GABA levels in pain-related brain regions are associated with individual differences in pain sensitivity. Experimental heat, cold, and mechanical pain thresholds were obtained from 39 healthy, drug-free individuals (25 men) according to the quantitative sensory testing protocol and summarized into 1 composite measure of pain sensitivity. The Glx levels were measured using point-resolved spectroscopy at 3 T, within a network of pain-associated brain regions comprising the insula, the anterior cingulate cortex, the mid-cingulate cortex, the dorsolateral prefrontal cortex, and the thalamus. GABA levels were measured using GABA-edited spectroscopy (Mescher-Garwood point-resolved spectroscopy) within the insula, the anterior cingulate cortex, and the mid-cingulate cortex. Glx and/or GABA levels correlated positively across all brain regions. Gender, weekly alcohol consumption, and depressive symptoms were significantly associated with Glx and/or GABA levels. A linear regression analysis including all these factors indicated that Glx levels pooled across pain-related brain regions were positively associated with pain sensitivity, whereas no appreciable relationship with GABA was found. In sum, we show that the levels of the excitatory neurotransmitter glutamate and its precursor glutamine across pain-related brain regions are positively correlated with individual pain sensitivity. Future studies will have to determine whether our findings also apply to clinical populations.

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

The mid-IR silicon photonics sensor platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2015-07-07

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

NASA Astrophysics Data System (ADS)

Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

2018-01-01

Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

Trimming of silicon ring resonator by electron beam induced compaction and strain.

PubMed

Schrauwen, J; Van Thourhout, D; Baets, R

2008-03-17

Silicon is becoming the preferable platform for future integrated components, mostly due to the mature and reliable fabrication capabilities of electronics industry. Nevertheless, even the most advanced fabrication technologies suffer from non-uniformity on wafer scale and on chip scale, causing variations in the critical dimensions of fabricated components. This is an important issue since photonic circuits, and especially cavities such as ring resonators, are extremely sensitive to these variations. In this paper we present a way to circumvent these problems by trimming using electron beam induced compaction of oxide in silicon on insulator. Volume compaction of the oxide cladding causes both changes in the refractive index and creates strain in the silicon lattice. We demonstrate a resonance wavelength red shift 4.91 nm in a silicon ring resonator.

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

PubMed Central

Wyrsch, Nicolas; Choong, Gregory; Miazza, Clément; Ballif, Christophe

2008-01-01

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. PMID:27873778

Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

NASA Astrophysics Data System (ADS)

Hansen, Matthew E.; Cerrina, Franco

1994-05-01

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm2 with a measurement sensitivity of less than 5 nm.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Light sensitivity of a one transistor-one capacitor memory cell when used as a micromirror actuator in projector applications

NASA Astrophysics Data System (ADS)

Huffman, James Douglas

2001-11-01

The most important issue facing the future business success of the Digital Micromirror Device or DMD™ produced by Texas Instruments is the cost of the actual device. As the business and consumer markets call for higher resolution displays, the array size will have to be increased to incorporate more pixels. The manufacturing costs associated with building these higher resolution displays follow an exponential relation with the number of pixels due to yield loss and reduced number of chips per silicon wafer. Each pixel is actuated by electrostatics that are provided by a memory cell that is built in the underlying silicon substrate. One way to decrease cost of the wafer is to change the memory cell architecture from a static random access configuration or SRAM to a dynamic random access configuration or DRAM. This change has the benefits of having fewer components per area and a lower metal density. This reduction in the component count and metal density has a dramatic effect on the yield of the memory array by reducing the particle sensitivity of the underlying cell. The main drawback to using a DRAM configuration in a display application is the light sensitivity of a charge storage device built in the silicon substrate. As the photons pass through the mechanical micromirrors and illuminate the DRAM cell, the effective electrostatic potential of the memory element used for the mirror actuation is reduced. This dissertation outlines the issues associated with the light sensitivity of a DRAM memory cell as the actuation element for a micromirror. The concept of charge depletion on a silicon capacitor due to recombination of photogenerated carriers is explored and experimentally verified. The effects of the reduced potential on the capacitor on the micromirror are also explored. Optical modeling is used to determine the incoming photon flux to determine the benefits of adding a charge recombination region as part of the DRAM memory cell. Several options are explored

Characterization of a fully depleted CCD on high-resistivity silicon

NASA Astrophysics Data System (ADS)

Stover, Richard J.; Wei, Mingzhi; Lee, Y.; Gilmore, David K.; Holland, S. E.; Groom, D. E.; Moses, William W.; Perlmutter, Saul; Goldhaber, G.; Pennypacker, C.; Wang, N. W.; Palaio, N.

1997-04-01

Most scientific CCD imagers are fabricated on 30-50 (Omega) - cm epitaxial silicon. When illuminated form the front side of the device they generally have low quantum efficiency in the blue region of the visible spectrum because of strong absorption in the polycrystalline silicon gates as well as poor quantum efficiency in the far red and near infrared region of the spectrum because of the shallow depletion depth of the low-resistivity silicon. To enhance the blue response of scientific CCDs they are often thinned and illuminated from the back side. While blue response is greatly enhanced by this process, it is expensive and it introduces additional problems for the red end of the spectrum. A typical thinned CCD is 15 to 25 micrometers thick, and at wavelengths beyond about 800 nm the absorption depth becomes comparable to the thickness of the device, leading to interference fringes from reflected light. Because these interference fringes are of high order, the spatial pattern of the fringes is extremely sensitive to small changes in the optical illumination of the detector. Calibration and removal of the effects of the fringes is one of the primary limitations on the performance of astronomical images taken at wavelengths of 800 nm or more. In this paper we present results from the characterization of a CCD which promises to address many of the problems of typical thinned CCDs. The CCD reported on here was fabricated at Lawrence Berkeley National Laboratory (LBNL) on a 10-12 K$OMega-cm n-type silicon substrate.THe CCD is a 200 by 200 15-micrometers square pixel array, and due to the very high resistivity of the starting material, the entire 300 micrometers substrate is depleted. Full depletion works because of the gettering technology developed at LBNL which keeps leakage current down. Both front-side illuminated and backside illuminated devices have been tested. We have measured quantum efficiency, read-noise, full-well, charge-transfer efficiency, and leakage

A wearable strain sensor based on a carbonized nano-sponge/silicone composite for human motion detection.

PubMed

Yu, Xiao-Guang; Li, Yuan-Qing; Zhu, Wei-Bin; Huang, Pei; Wang, Tong-Tong; Hu, Ning; Fu, Shao-Yun

2017-05-25

Melamine sponge, also known as nano-sponge, is widely used as an abrasive cleaner in our daily life. In this work, the fabrication of a wearable strain sensor for human motion detection is first demonstrated with a commercially available nano-sponge as a starting material. The key resistance sensitive material in the wearable strain sensor is obtained by the encapsulation of a carbonized nano-sponge (CNS) with silicone resin. The as-fabricated CNS/silicone sensor is highly sensitive to strain with a maximum gauge factor of 18.42. In addition, the CNS/silicone sensor exhibits a fast and reliable response to various cyclic loading within a strain range of 0-15% and a loading frequency range of 0.01-1 Hz. Finally, the CNS/silicone sensor as a wearable device for human motion detection including joint motion, eye blinking, blood pulse and breathing is demonstrated by attaching the sensor to the corresponding parts of the human body. In consideration of the simple fabrication technique, low material cost and excellent strain sensing performance, the CNS/silicone sensor is believed to have great potential in the next-generation of wearable devices for human motion detection.

A wireless beta-microprobe based on pixelated silicon for in vivo brain studies in freely moving rats

NASA Astrophysics Data System (ADS)

Märk, J.; Benoit, D.; Balasse, L.; Benoit, M.; Clémens, J. C.; Fieux, S.; Fougeron, D.; Graber-Bolis, J.; Janvier, B.; Jevaud, M.; Genoux, A.; Gisquet-Verrier, P.; Menouni, M.; Pain, F.; Pinot, L.; Tourvielle, C.; Zimmer, L.; Morel, C.; Laniece, P.

2013-07-01

The investigation of neurophysiological mechanisms underlying the functional specificity of brain regions requires the development of technologies that are well adjusted to in vivo studies in small animals. An exciting challenge remains the combination of brain imaging and behavioural studies, which associates molecular processes of neuronal communications to their related actions. A pixelated intracerebral probe (PIXSIC) presents a novel strategy using a submillimetric probe for beta+ radiotracer detection based on a pixelated silicon diode that can be stereotaxically implanted in the brain region of interest. This fully autonomous detection system permits time-resolved high sensitivity measurements of radiotracers with additional imaging features in freely moving rats. An application-specific integrated circuit (ASIC) allows for parallel signal processing of each pixel and enables the wireless operation. All components of the detector were tested and characterized. The beta+ sensitivity of the system was determined with the probe dipped into radiotracer solutions. Monte Carlo simulations served to validate the experimental values and assess the contribution of gamma noise. Preliminary implantation tests on anaesthetized rats proved PIXSIC's functionality in brain tissue. High spatial resolution allows for the visualization of radiotracer concentration in different brain regions with high temporal resolution.

Theoretical study on sensitivity enhancement in energy-deficit region of chemically amplified resists used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2017-10-01

The role of photons in lithography is to transfer the energy and information required for resist pattern formation. In the information-deficit region, a trade-off relationship is observed between line edge roughness (LER) and sensitivity. However, the sensitivity can be increased without increasing LER in the energy-deficit region. In this study, the sensitivity enhancement limit was investigated, assuming line-and-space patterns with a half-pitch of 11 nm. LER was calculated by a Monte Carlo method. It was unrealistic to increase the sensitivity twofold while keeping the line width roughness (LWR) within 10% critical dimension (CD), whereas the twofold sensitivity enhancement with 20% CD LWR was feasible. The requirements are roughly that the sensitization distance should be less than 2 nm and that the total sensitizer concentration should be higher than 0.3 nm-3.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

PubMed

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

biomedical applications, including biosensor, bioimaging, and cancer therapy. First, we show that the interesting photoluminescence properties (e.g., strong fluorescence and robust photostability) and excellent biocompatibility of silicon nanoparticles (SiNPs) are superbly suitable for direct and long-term visualization of biological systems. The strongly fluorescent SiNPs are highly effective for bioimaging applications, especially for long-term cellular labeling, cancer cell detection, and tumor imaging in vitro and in vivo with high sensitivity. Next, we discuss the utilization of silicon nanomaterials to construct high-performance biosensors, such as silicon-based field-effect transistors (FET) and surface-enhanced Raman scattering (SERS) sensors, which hold great promise for ultrasensitive and selective detection of biological species (e.g., DNA and protein). Then, we introduce recent exciting research findings on the applications of silicon nanomaterials for cancer therapy with encouraging therapeutic outcomes. Lastly, we highlight the major challenges and promises in this field, and the prospect of a new nanobiotechnology platform based on silicon nanomaterials.

Phase sensitive amplification in integrated waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Schroeder, Jochen B.; Zhang, Youngbin; Husko, Chad A.; LeFrancois, Simon; Eggleton, Benjamin J.

2017-02-01

Phase sensitive amplification (PSA) is an attractive technology for integrated all-optical signal processing, due to it's potential for noiseless amplification, phase regeneration and generation of squeezed light. In this talk I will review our results on implementing four-wave-mixing based PSA inside integrated photonic devices. In particular I will discuss PSA in chalcogenide ridge waveguides and silicon slow-light photonic crystals. We achieve PSA in both pump- and signal-degenerate schemes with maximum extinction ratios of 11 (silicon) and 18 (chalcogenide) dB. I will further discuss the influence of two-photon absorption and free carrier effects on the performance of silicon-based PSAs.

pH-sensitive ion-selective field-effect transistor with zirconium dioxide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlasov, Yu.G.; Bratov, A.V.; Tarantov, Yu.A.

1988-09-20

Miniature semiconductor pH sensors for liquid media, i.e., ion-selective field-effect transistors (ISFETs), are silicon field-effect transistors with a two-layer dielectric consisting of a passivating SiO/sub 2/ layer adjoining the silicon and a layer of pH-sensitive material in contact with the electrolyte solution to be tested. This study was devoted to the characteristics of pH-sensitive ISFETs with ZrO/sub 2/ films. The base was p-type silicon (KDB-10) with a (100) surface orientation. A ZrO/sub 2/ layer 10-50 nm thick was applied over the SiO/sub 2/ layer by electron-beam deposition. The measurements were made in aqueous KNO/sub 3/ or KCl solutions.

Highly Sensitive and Practical Detection of Plant Viruses via Electrical Impedance of Droplets on Textured Silicon-Based Devices

PubMed Central

Ambrico, Marianna; Ambrico, Paolo Francesco; Minafra, Angelantonio; De Stradis, Angelo; Vona, Danilo; Cicco, Stefania R.; Palumbo, Fabio; Favia, Pietro; Ligonzo, Teresa

2016-01-01

Early diagnosis of plant virus infections before the disease symptoms appearance may represent a significant benefit in limiting disease spread by a prompt application of appropriate containment steps. We propose a label-free procedure applied on a device structure where the electrical signal transduction is evaluated via impedance spectroscopy techniques. The device consists of a droplet suspension embedding two representative purified plant viruses i.e., Tomato mosaic virus and Turnip yellow mosaic virus, put in contact with a highly hydrophobic plasma textured silicon surface. Results show a high sensitivity of the system towards the virus particles with an interestingly low detection limit, from tens to hundreds of attomolar corresponding to pg/mL of sap, which refers, in the infection time-scale, to a concentration of virus particles in still-symptomless plants. Such a threshold limit, together with an envisaged engineering of an easily manageable device, compared to more sophisticated apparatuses, may contribute in simplifying the in-field plant virus diagnostics. PMID:27869726

Expertise with artificial non-speech sounds recruits speech-sensitive cortical regions

PubMed Central

Leech, Robert; Holt, Lori L.; Devlin, Joseph T.; Dick, Frederic

2009-01-01

Regions of the human temporal lobe show greater activation for speech than for other sounds. These differences may reflect intrinsically specialized domain-specific adaptations for processing speech, or they may be driven by the significant expertise we have in listening to the speech signal. To test the expertise hypothesis, we used a video-game-based paradigm that tacitly trained listeners to categorize acoustically complex, artificial non-linguistic sounds. Before and after training, we used functional MRI to measure how expertise with these sounds modulated temporal lobe activation. Participants’ ability to explicitly categorize the non-speech sounds predicted the change in pre- to post-training activation in speech-sensitive regions of the left posterior superior temporal sulcus, suggesting that emergent auditory expertise may help drive this functional regionalization. Thus, seemingly domain-specific patterns of neural activation in higher cortical regions may be driven in part by experience-based restructuring of high-dimensional perceptual space. PMID:19386919

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Synthesis, Characterization and Optical Constants of Silicon Oxycarbide

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Abro, Muhammad Ishaque; Iseni, Giosue; Somaschini, Claudio; Aftab, Umair; Melloni, Andrea

2017-03-01

High refractive index glasses are preferred in integrated photonics applications to realize higher integration scale of passive devices. With a refractive index that can be tuned between SiO2 (1.45) and a-SiC (3.2), silicon oxycarbide SiOC offers this flexibility. In the present work, silicon oxycarbide thin films from 0.1 - 2.0 μm thickness are synthesized by reactive radio frequency magnetron sputtering a silicon carbide SiC target in a controlled argon and oxygen environment. The refractive index n and material extinction coefficient k of the silicon oxycarbide films are acquired with variable angle spectroscopic ellipsometry over the UV-Vis-NIR wavelength range. Keeping argon and oxygen gases in the constant ratio, the refractive index n is found in the range from 1.41 to 1.93 at 600 nm which is almost linearly dependent on RF power of sputtering. The material extinction coefficient k has been estimated to be less than 10-4 for the deposited silicon oxycarbide films in the visible and near-infrared wavelength regions. Morphological and structural characterizations with SEM and XRD confirms the amorphous phase of the SiOC films.

Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 14 February 1994--14 April 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, A.; Tanenbaum, D.; Laracuente, A.

1995-08-01

Properties of the hydrogenated amorphous silicon (a-Si:H) films used in photovoltaic (PV) panels are reported. The atomic-scale topology of the surface of intrinsic a-Si:H films, measured by scanning tunneling microscopy (STM) as a function of film thickness, are reported and diagnosed. For 1-500-nm-thick films deposited under normal device-quality conditions from silane discharges, most portions of these surfaces are uniformly hilly without indications of void regions. However, the STM images indicate that 2-6-nm silicon particulates are continuously deposited into the growing film from the discharge and fill approximately 0.01% of the film volume. Although the STM data are not sensitive tomore » the local electronic properties near these particulates, it is very likely that the void regions grow around them and have a deleterious effect on a-Si:H photovoltaics. Preliminary observations of particulates in the discharge, based on light scattering, confirm that particulates are present in the discharge and that many collect and agglomerate immediately downstream of the electrodes. Progress toward STM measurements of the electronic properties of cross-sectioned a-Si:H PV cells is also reported.« less

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

NASA Astrophysics Data System (ADS)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

High sensitive position-dependent photodetection observed in Cu-covered Si nanopyramids.

PubMed

Mei, Chunlian; Zou, Jiaren; Huang, Xu; Zou, Bugao; Zhou, Peiqi; Gan, Zhikai; Hu, Jieqiong; Zhang, Qian; Wang, Hui

2018-05-18

Silicon nanopyramids with the excellent ability of light absorption have been mostly reported in solar cells. Here, we report an obviously enhanced lateral photovoltaic effect (LPE) in copper-nanoparticle-covered random Si nanopyramids (Cu@Si-pyramid). Remarkable photoelectric responses are achieved in broadband from 405 to 780 nm. Furthermore, a prominent LPE is double-enhanced from 74.0 to 157.9 mV mm -1 when the linear region decreases from 3 to 1 mm. Finite-difference time-domain simulation is applied to investigate the origin of the exceptional results. This work declares a position-sensitive property of Si-nanopyramid systems and proposes promising applications to photodetections based on LPE.

High sensitive position-dependent photodetection observed in Cu-covered Si nanopyramids

NASA Astrophysics Data System (ADS)

Mei, Chunlian; Zou, Jiaren; Huang, Xu; Zou, Bugao; Zhou, Peiqi; Gan, Zhikai; Hu, Jieqiong; Zhang, Qian; Wang, Hui

2018-05-01

Silicon nanopyramids with the excellent ability of light absorption have been mostly reported in solar cells. Here, we report an obviously enhanced lateral photovoltaic effect (LPE) in copper-nanoparticle-covered random Si nanopyramids (Cu@Si-pyramid). Remarkable photoelectric responses are achieved in broadband from 405 to 780 nm. Furthermore, a prominent LPE is double-enhanced from 74.0 to 157.9 mV mm‑1 when the linear region decreases from 3 to 1 mm. Finite-difference time-domain simulation is applied to investigate the origin of the exceptional results. This work declares a position-sensitive property of Si-nanopyramid systems and proposes promising applications to photodetections based on LPE.

External self-gettering of nickel in float zone silicon wafers

NASA Astrophysics Data System (ADS)

Gay, N.; Martinuzzi, S.

1997-05-01

During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni-Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source.

Front-end circuit for position sensitive silicon and vacuum tube photomultipliers with gain control and depth of interaction measurement

NASA Astrophysics Data System (ADS)

Herrero, Vicente; Colom, Ricardo; Gadea, Rafael; Lerche, Christoph W.; Cerdá, Joaquín; Sebastiá, Ángel; Benlloch, José M.

2007-06-01

Silicon Photomultipliers, though still under development for mass production, may be an alternative to traditional Vacuum Photomultipliers Tubes (VPMT). As a consequence, electronic front-ends initially designed for VPMT will need to be modified. In this simulation, an improved architecture is presented which is able to obtain impact position and depth of interaction of a gamma ray within a continuous scintillation crystal, using either kind of PM. A current sensitive preamplifier stage with individual gain adjustment interfaces the multi-anode PM outputs with a current division resistor network. The preamplifier stage allows to improve front-end processing delay and temporal resolution behavior as well as to increase impact position calculation resolution. Depth of interaction (DOI) is calculated from the width of the scintillation light distribution, which is related to the sum of voltages in resistor network input nodes. This operation is done by means of a high-speed current mode scheme.

a-Si:H TFT-silicon hybrid low-energy x-ray detector

DOE PAGES

Shin, Kyung -Wook; Karim, Karim S.

2017-03-15

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Monolithically Integrated High-β Nanowire Lasers on Silicon.

PubMed

Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

2016-01-13

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Modified silicon carbide whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-05-21

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Quantum metrology with a single spin-3/2 defect in silicon carbide

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using the novel features of semiconductor high half-spin multiplet defects with easy-to-implement optical detection protocols. To achieve this, we use the spin- 3 / 2 silicon monovacancy deep center in hexagonal silicon carbide based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single VSi- defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. Other point defects, i.e. 3d transition metal or rare-earth impurities in semiconductors, may also provide similar opportunities in quantum sensing due to their similar high spin (S >= 3 / 2) configurations. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

Design Approaches for Enhancing Photovoltaic Performance of Silicon Solar Cells Sensitized by Proximal Nanocrystalline Quantum Dots

NASA Astrophysics Data System (ADS)

Shafiq, Natis

Energy transfer (ET) based sensitization of silicon (Si) using proximal nanocrystal quantum dots (NQDs) has been studied extensively in recent years as a means to develop thin and flexible Si based solar cells. The driving force for this research activity is a reduction in materials cost. To date, the main method for determining the role of ET in sensitizing Si has been optical spectroscopic studies. The quantitative contribution from two modes of ET (namely, nonradiative and radiative) has been reported using time-resolved photoluminescence (TRPL) spectroscopy coupled with extensive theoretical modelling. Thus, optical techniques have established the potential for utilizing ET based sensitization of Si as a feasible way to develop novel NQD-Si hybrid solar cells. However, the ultimate measure of the efficiency of ET-based mechanisms is the generation of electron-hole pairs by the impinging photons. It is therefore important to perform electrical measurements. However, only a couple of studies have attempted electrical quantification of ET modes. A few studies have focused on photocurrent measurements, without considering industrially relevant photovoltaic (PV) systems. Therefore, there is a need to develop a systematic approach for the electrical quantification of ET-generated charges and to help engineer new PV architectures optimized for harnessing the full advantages of ET mechanisms. Within this context, the work presented in this dissertation aims to develop an experimental testing protocol that can be applied to different PV structures for quantifying ET contributions from electrical measurements. We fabricated bulk Si solar cells (SCs) as a test structure and utilized CdSe/ZnS NQDs for ET based sensitization. The NQD-bulk Si hybrid devices showed ˜30% PV enhancement after NQD deposition. We measured external quantum efficiency (EQE) of these devices to quantify ET-generated charges. Reflectance measurements were also performed to decouple contributions of

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

1984-01-01

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Road to Silicon Microsphere Fabrication and Mode Coupling

DTIC Science & Technology

2014-07-01

from optical fiber onto a microsphere in whispering gallery mode (courtesy of B. Butkus, Biophotonics International [2...Butkus, Biophotonics International [5]). 2 BACKGROUND SILICON MICROSPHERE FABRICATION METHODS Processes for forming spherical structures exist in...Sensitive DNA Detection.” October 2003. Biophotonics International. http://www.rowland.org/rjf/vollmer/images/biophotonics.pdf [6] James E. McDonald

Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell

NASA Astrophysics Data System (ADS)

A. Betty, C.; N, Padma; Arora, Shalav; Survaiya, Parth; Bhattacharya, Debarati; Choudhury, Sipra; Roy, Mainak

2018-01-01

A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the π-π stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives Voc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer.

Estimation of regional cutaneous cold sensitivity by analysis of the gasping response.

PubMed

Burke, W E; Mekjavić, I B

1991-11-01

Regional cutaneous sensitivity to cooling was assessed in males by separately immersing four discrete skin regions in cold water (15 degrees C) during head-out immersion. The response measured was gasping at the onset of immersion; the gasping response appears to be the result of a nonthermoregulatory neurogenic drive from cutaneous cold receptors. Subjects of similar body proportions wore a neoprene "dry" suit modified to allow exposure to the water of either the arms, upper torso, lower torso, or legs, while keeping the unexposed skin regions thermoneutral. Each subject was immersed to the sternal notch in all four conditions of partial exposure plus one condition of whole body exposure. The five cold water conditions were matched by control immersions in lukewarm (34 degrees C) water, and trials were randomized. The magnitude of the gasping response was determined by mouth occlusion pressure (P0.1). For each subject, P0.1 values for the 1st min of immersion were integrated, and control trial values, although minimal, were subtracted from their cold water counterpart to account for any gasping due to the experimental design. Results were averaged and showed that the highest P0.1 values were elicited from whole body exposure, followed in descending order by exposures of the upper torso, legs, lower torso, and arms. Correction of the P0.1 response for differences in exposed surface area (A) and cooling stimulus (delta T) between regions gave a cold sensitivity index [CSI, P0.1/(A.delta T)] for each region and showed that the index for the upper torso was significantly higher than that for the arms or legs; no significant difference was observed between the indexes for the upper and lower torso.(ABSTRACT TRUNCATED AT 250 WORDS)

Design and Implementation of a Micromechanical Silicon Resonant Accelerometer

PubMed Central

Huang, Libin; Yang, Hui; Gao, Yang; Zhao, Liye; Liang, Jinxing

2013-01-01

The micromechanical silicon resonant accelerometer has attracted considerable attention in the research and development of high-precision MEMS accelerometers because of its output of quasi-digital signals, high sensitivity, high resolution, wide dynamic range, anti-interference capacity and good stability. Because of the mismatching thermal expansion coefficients of silicon and glass, the micromechanical silicon resonant accelerometer based on the Silicon on Glass (SOG) technique is deeply affected by the temperature during the fabrication, packaging and use processes. The thermal stress caused by temperature changes directly affects the frequency output of the accelerometer. Based on the working principle of the micromechanical resonant accelerometer, a special accelerometer structure that reduces the temperature influence on the accelerometer is designed. The accelerometer can greatly reduce the thermal stress caused by high temperatures in the process of fabrication and packaging. Currently, the closed-loop drive circuit is devised based on a phase-locked loop. The unloaded resonant frequencies of the prototype of the micromechanical silicon resonant accelerometer are approximately 31.4 kHz and 31.5 kHz. The scale factor is 66.24003 Hz/g. The scale factor stability is 14.886 ppm, the scale factor repeatability is 23 ppm, the bias stability is 23 μg, the bias repeatability is 170 μg, and the bias temperature coefficient is 0.0734 Hz/°C. PMID:24256978

Design and implementation of a micromechanical silicon resonant accelerometer.

PubMed

Huang, Libin; Yang, Hui; Gao, Yang; Zhao, Liye; Liang, Jinxing

2013-11-19

The micromechanical silicon resonant accelerometer has attracted considerable attention in the research and development of high-precision MEMS accelerometers because of its output of quasi-digital signals, high sensitivity, high resolution, wide dynamic range, anti-interference capacity and good stability. Because of the mismatching thermal expansion coefficients of silicon and glass, the micromechanical silicon resonant accelerometer based on the Silicon on Glass (SOG) technique is deeply affected by the temperature during the fabrication, packaging and use processes. The thermal stress caused by temperature changes directly affects the frequency output of the accelerometer. Based on the working principle of the micromechanical resonant accelerometer, a special accelerometer structure that reduces the temperature influence on the accelerometer is designed. The accelerometer can greatly reduce the thermal stress caused by high temperatures in the process of fabrication and packaging. Currently, the closed-loop drive circuit is devised based on a phase-locked loop. The unloaded resonant frequencies of the prototype of the micromechanical silicon resonant accelerometer are approximately 31.4 kHz and 31.5 kHz. The scale factor is 66.24003 Hz/g. The scale factor stability is 14.886 ppm, the scale factor repeatability is 23 ppm, the bias stability is 23 μg, the bias repeatability is 170 μg, and the bias temperature coefficient is 0.0734 Hz/°C.

Comparisons of LET distributions measured in low-earth orbit using tissue-equivalent proportional counters and the position-sensitive silicon-detector telescope (RRMD-III)

NASA Technical Reports Server (NTRS)

Doke, T.; Hayashi, T.; Borak, T. B.; Chatterjee, A. (Principal Investigator)

2001-01-01

Determinations of the LET distribution, phi(L), of charged particles within a spacecraft in low-Earth orbit have been made. One method used a cylindrical tissue-equivalent proportional counter (TEPC), with the assumption that for each measured event, lineal energy, y, is equal to LET and thus phi(L) = phi(y). The other was based on the direct measurement of LETs for individual particles using a charged-particle telescope consisting of position-sensitive silicon detectors called RRMD-III. There were differences of up to a factor of 10 between estimates of phi(L) using the two methods on the same mission. This caused estimates of quality factor to vary by a factor of two between the two methods.

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Variability of temperature sensitivity of extreme precipitation from a regional-to-local impact scale perspective

NASA Astrophysics Data System (ADS)

Schroeer, K.; Kirchengast, G.

2016-12-01

Relating precipitation intensity to temperature is a popular approach to assess potential changes of extreme events in a warming climate. Potential increases in extreme rainfall induced hazards, such as flash flooding, serve as motivation. It has not been addressed whether the temperature-precipitation scaling approach is meaningful on a regional to local level, where the risk of climate and weather impact is dealt with. Substantial variability of temperature sensitivity of extreme precipitation has been found that results from differing methodological assumptions as well as from varying climatological settings of the study domains. Two aspects are consistently found: First, temperature sensitivities beyond the expected consistency with the Clausius-Clapeyron (CC) equation are a feature of short-duration, convective, sub-daily to sub-hourly high-percentile rainfall intensities at mid-latitudes. Second, exponential growth ceases or reverts at threshold temperatures that vary from region to region, as moisture supply becomes limited. Analyses of pooled data, or of single or dispersed stations over large areas make it difficult to estimate the consequences in terms of local climate risk. In this study we test the meaningfulness of the scaling approach from an impact scale perspective. Temperature sensitivities are assessed using quantile regression on hourly and sub-hourly precipitation data from 189 stations in the Austrian south-eastern Alpine region. The observed scaling rates vary substantially, but distinct regional and seasonal patterns emerge. High sensitivity exceeding CC-scaling is seen on the 10-minute scale more than on the hourly scale, in storms shorter than 2 hours duration, and in shoulder seasons, but it is not necessarily a significant feature of the extremes. To be impact relevant, change rates need to be linked to absolute rainfall amounts. We show that high scaling rates occur in lower temperature conditions and thus have smaller effect on absolute

A silicon nanowire heater and thermometer

NASA Astrophysics Data System (ADS)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

Diode laser heterodyne observations of silicon monoxide in sunspots - A test of three sunspot models

NASA Technical Reports Server (NTRS)

Glenar, D. A.; Deming, D.; Jennings, D. E.; Kostiuk, T.; Mumma, M. J.

1983-01-01

Absorption features from the 8 micron SiO fundamental (upsilon = 1-0) and hot bands (upsilon = 2-1) have been observed in sunspots at sub-Doppler resolution using a ground-based tunable diode laser heterodyne spectrometer. The observed line widths suggest an upper limit of 0.5 km/s for the microturbulent velocity in sunspot umbrae. Since the silicon monoxide abundance is very sensitive to sunspot temperature, the measured equivalent widths permit an unambiguous determination of the temperature-pressure relation in the upper layers of the umbral atmosphere. In the region of SiO line formation (log P sub g = 3.0-4.5), the results support the sunspot model suggested by Stellmacher and Wiehr (1970).

Diffusion lengths of silicon solar cells from luminescence images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wuerfel, P.; Trupke, T.; Puzzer, T.

A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced. The method, which is based on measuring the ratio of two luminescence images taken with two different spectral filters, is applicable, in principle, to both photoluminescence and electroluminescence measurements and is demonstrated experimentally by electroluminescence measurements on a multicrystalline silicon solar cell. Good agreement is observed with the diffusion length distribution obtained from a spectrally resolved light beam induced current map. In contrast to the determination of diffusion lengths from one single luminescence image, the method proposed heremore » gives absolute values of the diffusion length and, in comparison, it is much less sensitive to lateral voltage variations across the cell area as caused by local variations of the series resistance. It is also shown that measuring the ratio of two luminescence images allows distinguishing shunts or surface defects from bulk defects.« less

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Design of a Tunable, Room Temperature, Continuous-Wave Terahertz Source and Detector using Silicon Waveguides

DTIC Science & Technology

2008-01-30

that will use conventional diode- or hotomultiplier-tube-based optical detectors , which are xtremely sensitive . . HEATING AND FREE-CARRIER IMITATIONS...CONTRACT NUMBER IN-HOUSE Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides 5b. GRANT...B 261Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides T. Baehr-Jones,1,* M. Hochberg,1,3

The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles.

PubMed

Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M

2015-12-21

The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.

Purified silicon production system

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2004-03-30

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

NASA Astrophysics Data System (ADS)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

A silicon carbide array for electrocorticography and peripheral nerve recording.

PubMed

Diaz-Botia, C A; Luna, L E; Neely, R M; Chamanzar, M; Carraro, C; Carmena, J M; Sabes, P N; Maboudian, R; Maharbiz, M M

2017-10-01

Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

A silicon carbide array for electrocorticography and peripheral nerve recording

NASA Astrophysics Data System (ADS)

Diaz-Botia, C. A.; Luna, L. E.; Neely, R. M.; Chamanzar, M.; Carraro, C.; Carmena, J. M.; Sabes, P. N.; Maboudian, R.; Maharbiz, M. M.

2017-10-01

Objective. Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. Approach. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. Main results. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Significance. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

The effect of a silicone wristband in dynamic balance.

PubMed

Teruya, Thiago Toshi; Matareli, Bruno Machado; Soares Romano, Fillipe; Mochizuki, Luis

2013-10-01

The effect of a wristband on the dynamic balance of young adults was assessed. Twenty healthy young adults wore a commercial Power BalanceT or fake silicone wristband. A 3D accelerometer was attached to their lumbar region to measure body sway. They played the video game Tightrope (Wii video game console) with and without a wristband; body sway acceleration was measured. Mean balance sway acceleration and its variability were the same in all conditions, so silicone wristbands do not modify dynamic balance control.

Low cost silicon solar array project silicon materials task

NASA Technical Reports Server (NTRS)

1977-01-01

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

Historical perspective of barriers to achieving high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindmayer, J.

1985-01-01

Early silicon solar cells were made of metallurgical-grade silicon with very low efficiency. The single-crystal silicon introduced in the mid-50's increased the efficiency to the 5% to 10% region. Throughout the 1960s the technology of the 2 x 2 cm or 2 x 4 cm space solar cell with 10% efficiency was established. In the early 1970s work related to the violet cell upset the status quo and space solar cells and cells in general became more efficient. The rest of the decade became characterized by establishing a terrestrial photovoltaic technology to support the development of a new industry. Costs per watt became the dominant consideration and frequently the efficiency was compromised. The introduction of materials and other forms of silicon dropped the efficiency and it is now a state of mine that accomplishing 10% efficiency with some alternative combination is regarded as success. Silicon solar cells are capable of delivering efficiences much greater than 10%.

Intracellular trafficking of silicon particles and logic-embedded vectors

NASA Astrophysics Data System (ADS)

Ferrati, Silvia; Mack, Aaron; Chiappini, Ciro; Liu, Xuewu; Bean, Andrew J.; Ferrari, Mauro; Serda, Rita E.

2010-08-01

Mesoporous silicon particles show great promise for use in drug delivery and imaging applications as carriers for second-stage nanoparticles and higher order particles or therapeutics. Modulation of particle geometry, surface chemistry, and porosity allows silicon particles to be optimized for specific applications such as vascular targeting and avoidance of biological barriers commonly found between the site of drug injection and the final destination. In this study, the intracellular trafficking of unloaded carrier silicon particles and carrier particles loaded with secondary iron oxide nanoparticles was investigated. Following cellular uptake, membrane-encapsulated silicon particles migrated to the perinuclear region of the cell by a microtubule-driven mechanism. Surface charge, shape (spherical and hemispherical) and size (1.6 and 3.2 μm) of the particle did not alter the rate of migration. Maturation of the phagosome was associated with an increase in acidity and acquisition of markers of late endosomes and lysosomes. Cellular uptake of iron oxide nanoparticle-loaded silicon particles resulted in sorting of the particles and trafficking to unique destinations. The silicon carriers remained localized in phagosomes, while the second stage iron oxide nanoparticles were sorted into multi-vesicular bodies that dissociated from the phagosome into novel membrane-bound compartments. Release of iron from the cells may represent exocytosis of iron oxide nanoparticle-loaded vesicles. These results reinforce the concept of multi-functional nanocarriers, in which different particles are able to perform specific tasks, in order to deliver single- or multi-component payloads to specific sub-cellular compartments.Mesoporous silicon particles show great promise for use in drug delivery and imaging applications as carriers for second-stage nanoparticles and higher order particles or therapeutics. Modulation of particle geometry, surface chemistry, and porosity allows silicon

Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

NASA Astrophysics Data System (ADS)

Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

2014-03-01

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

Observation of soliton compression in silicon photonic crystals

PubMed Central

Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

2014-01-01

Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with <10 pJ energy. We demonstrate a ~1-ps free-carrier-induced pulse acceleration and show that picosecond input pulses are critical to these observations. These experiments are enabled by a dispersion-engineered slow-light photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

Strain-Induced Spin-Resonance Shifts in Silicon Devices

NASA Astrophysics Data System (ADS)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es; Aitor Postigo, Pablo

2014-06-02

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained withmore » a top-down lithography method.« less

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

Stress studies in edge-defined film-fed growth of silicon ribbons

NASA Technical Reports Server (NTRS)

Kalejs, J.

1985-01-01

Stress and efficiency studies on sheet silicon are reported. It was found that the bulk diffusion length of stressed float zone and Czochralski silicon is limited by point defect recombination to about 20 micrometers in dislocation free regions after high temperature heat treatment and stress application. If in-diffusion by iron occurs, dislocations, carbon and oxygen, do not produce significant gettering with annealing. Further work ideas are suggested.

Porous Silicon as Anode Material for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Thakur, Madhuri; Pernites, Roderick; Sinsabaugh, Steve L.; Wong, Michael S.; Biswal, Sibani L.

Lithium-ion batteries are ubiquitous in our modern society, powering everything from cell phones, laptops, and power tools.They are also powering emerging applications such as electric vehicles and used for on-grid power stabilization. Lithium-ion batteries are a significant and growing part of this market due to their high specific energy. The worldwide market for lithium-ion batteries is projected to reach more than USD 9 billion by 2015. While lithium-ion batteries are often selected for their high specific energy, the market is demanding yet higher performance, usually in terms of energy stored per unit mass of battery. Many groups have recently turned their attention toward developing a silicon-based anode material to increase lithium-ion battery density. Silicon continues to draw great interest as an anode for lithium-ion batteries due to its large specific capacity as compared to the conventional graphite. Despite this exciting property, its practical use has been limited due to a large volume change associated with the insertion and extraction of lithium, which oftentimes leads to cracking and pulverization of the anode, limiting its cycle life. To overcome this problem, significant research has been focused toward developing various silicon nanostructures to accommodate the severe volume expansion and contraction. The structuring of the silicon often involves costly processing steps, limiting its application in price sensitive commercial lithium-ion batteries. To achieve commercial viability, work is being pursued on silicon battery anode structures and processes with a special emphasis on the cost and environment. In this review book chapter, we will summarize recent development of a cost-effective electrochemically etched porous silicon as an anode material for lithium-ion batteries. Briefly, the new approach involves creating hierarchical micron-and nanometer-sized pores on the surface of micron-sized silicon particulates, which are combined with an

Humidity sensing properties of morphology-controlled ordered silicon nanopillar

NASA Astrophysics Data System (ADS)

Li, Wei; Hu, Mingyue; Ge, Pengpeng; Wang, Jing; Guo, YanYan

2014-10-01

Ordered silicon nanopillar array (Si-NPA) was fabricated by nanosphere lithography. The size of silicon nanopillars can be easily controlled by an etching process. The period and density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. It was studied as a sensing material to detect humidity. Room temperature current sensitivity of Si-NPA sensor was investigated at a relative humidity (RH) ranging from 50 to 70%. As a result, the measured current showed there was a significant increase at 70% RH. The response and recovery time was about 10 s and 15 s. These excellent sensing characteristics indicate that Si-NPA might be a practical sensing material.

Study of drug release and tablet characteristics of silicone adhesive matrix tablets.

PubMed

Tolia, Gaurav; Li, S Kevin

2012-11-01

Matrix tablets of a model drug acetaminophen (APAP) were prepared using a highly compressible low glass transition temperature (T(g)) polymer silicone pressure sensitive adhesive (PSA) at various binary mixtures of silicone PSA/APAP ratios. Matrix tablets of a rigid high T(g) matrix forming polymer ethyl cellulose (EC) were the reference for comparison. Drug release study was carried out using USP Apparatus 1 (basket), and the relationship between the release kinetic parameters of APAP and polymer/APAP ratio was determined to estimate the excipient percolation threshold. The critical points attributed to both silicone PSA and EC tablet percolation thresholds were found to be between 2.5% and 5% w/w. For silicone PSA tablets, satisfactory mechanical properties were obtained above the polymer percolation threshold; no cracking or chipping of the tablet was observed above this threshold. Rigid EC APAP tablets showed low tensile strength and high friability. These results suggest that silicone PSA could eliminate issues related to drug compressibility in the formulation of directly compressed oral controlled release tablets of poorly compressible drug powder such as APAP. No routinely used excipients such as binders, granulating agents, glidants, or lubricants were required for making an acceptable tablet matrix of APAP using silicone PSA. Copyright © 2012 Elsevier B.V. All rights reserved.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Enabling chip-scale trace gas sensing systems with silicon photonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, William

Tunable laser trace-gas spectroscopy has been effectively used in both environmental and medical applications, for its sensitivity and specificity. We’ll describe how contemporary silicon photonics manufacturing and assembly are leveraged for a cost-effective miniaturized spectroscopic sensor platform, and outline uses in fugitive methane emissions monitoring.

Compounding with Silicones.

PubMed

Allen, Loyd V

2015-01-01

Since the 1940s, methylchlorosilanes have been used to treat glassware to prevent blood from clotting. The use of silicones in pharmaceutical and medical applications has grown to where today they are used in many life-saving devices (pacemakers, hydrocephalic shunts) and pharmaceutical applications from tubing, to excipients in topical formulations, to adhesives to affix transdermal drug delivery systems, and are also being used in products as active pharmaceutical ingredients, such as antiflatulents. About 60% of today's skin-care products now contain some type of silicone where they are considered safe and are known to provide a pleasant "silky-touch," non-greasy, and non-staining feel. Silicones exhibit many useful characteristics, and the safety of these agents supports their numerous applications; their biocompatibility is partially due to their low-chemical reactivity displayed by silicones, low-surface energy, and their hydrophobicity. Silicones are used both as active ingredients and as excipients. In addition is their use for "siliconization," or surface treatment, of many parenteral packaging components. Dimethicone and silicone oil are used as lubricants on stoppers to aid machineability, in syringes to aid piston movement, or on syringe needles to reduce pain upon injection. Silicones are also useful in pharmaceutical compounding as is discussed in this artiele included with this article are in developing formulations with silicones.

Regional vascular density-visual field sensitivity relationship in glaucoma according to disease severity.

PubMed

Shin, Joong Won; Lee, Jiyun; Kwon, Junki; Choi, Jaewan; Kook, Michael S

2017-12-01

To study whether there are global and regional relationships between peripapillary vascular density (pVD) assessed by optical coherence tomography angiography (OCT-A) and visual field (VF) mean sensitivity at different glaucoma stages. Microvascular images and peripapillary retinal nerve fibre layer (pRNFL) thicknesses were obtained using a Cirrus OCT-A device in 91 glaucoma subjects. The pVD was measured at various spatial locations according to the Garway-Heath map, using a MATLAB software (The MathWorks, Natick, Massachusetts). VF mean sensitivity (VFMS) was recorded in the 1/L scale. Global and regional vasculature-function (pVD vs VFMS) relationships were assessed in separate patient groups at mild and moderate-to-advanced stages of glaucoma. The pVDs at superotemporal and inferotemporal regions were significantly associated with corresponding VFMS in mild glaucoma (p<0.05). In moderate-to-advanced glaucoma, there were significant associations between pVD and VFMS, regardless of location. The association between global pVD and VFMS was significantly stronger than that between global pRNFL thickness and VFMS in moderate-to-advanced stage glaucoma (p <0.05). Global and regional pVD measured by OCT-A was significantly associated with corresponding VFMS in moderate-to-advanced glaucoma. OCT-A may be useful in monitoring glaucoma at various stages. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Microfabricated silicon biosensors for microphysiometry

NASA Technical Reports Server (NTRS)

Bousse, L. J.; Libby, J. M.; Parce, J. W.

1993-01-01

Microphysiometers are biosensor devices that measure the metabolic rate of living cells by detecting the rate of extracellular acidification caused by a small number of cells. The cells are entrapped in a microvolume chamber, whose bottom surface is a silicon sensor chip. In a further miniaturization step, we have recently fabricated multichannel flow-through chips that will allow greater throughput and multiplicity. Microphysiometer technology can be applied to the detection of microorganisms. We describe the sensitive detection of bacteria and yeast. Further applications of microphysiometry to the characterization of microorganisms can be anticipated.

Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection.

PubMed

Bao, Zengtao; Sun, Jialin; Zhao, Xiaoqian; Li, Zengyao; Cui, Songkui; Meng, Qingyang; Zhang, Ye; Wang, Tong; Jiang, Yanfeng

2017-01-01

Sensitive and quantitative detection of tumor markers is highly required in the clinic for cancer diagnosis and consequent treatment. A field-effect transistor-based (FET-based) nanobiosensor emerges with characteristics of being label-free, real-time, having high sensitivity, and providing direct electrical readout for detection of biomarkers. In this paper, a top-down approach is proposed and implemented to fulfill a novel silicon nano-ribbon FET, which acts as biomarker sensor for future clinical application. Compared with the bottom-up approach, a top-down fabrication approach can confine width and length of the silicon FET precisely to control its electrical properties. The silicon nanoribbon (Si-NR) transistor is fabricated on a Silicon-on-Insulator (SOI) substrate by a top-down approach with complementary metal oxide semiconductor (CMOS)-compatible technology. After the preparation, the surface of Si-NR is functionalized with 3-aminopropyltriethoxysilane (APTES). Glutaraldehyde is utilized to bind the amino terminals of APTES and antibody on the surface. Finally, a microfluidic channel is integrated on the top of the device, acting as a flowing channel for the carcinoembryonic antigen (CEA) solution. The Si-NR FET is 120 nm in width and 25 nm in height, with ambipolar electrical characteristics. A logarithmic relationship between the changing ratio of the current and the CEA concentration is measured in the range of 0.1-100 ng/mL. The sensitivity of detection is measured as 10 pg/mL. The top-down fabricated biochip shows feasibility in direct detecting of CEA with the benefits of real-time, low cost, and high sensitivity as a promising biosensor for tumor early diagnosis.

Variation in emulsion stabilization behavior of hybrid silicone polymers with change in molecular structure: Phase diagram study.

PubMed

Mehta, Somil C; Somasundaran, P; Kulkarni, Ravi

2009-05-15

Silicone oils are widely used in cosmetics and personal care applications to improve softness and condition skin and hair. Being insoluble in water and most hydrocarbons, a common mode of delivering them is in the form of emulsions. Currently most applications use polyoxyethylene (non-ionic) modified siloxanes as emulsifiers to stabilize silicone oil emulsions. However, ionically grafted silicone polymers have not received much attention. Ionic silicones have significantly different properties than the non-ionic counterpart. Thus considerable potential exists to formulate emulsions of silicones with different water/silicone oil ratios for novel applications. In order to understand the mechanisms underlying the effects of hydrophilic modifications on the ability of hybrid silicone polymers to stabilize various emulsions, this article focuses on the phase diagram studies for silicone emulsions. The emulsifying ability of functional silicones was seen to depend on a number of factors including hydrophilicity of the polymer, nature of the functional groups, the extent of modification, and the method of emulsification. It was observed that the region of stable emulsion in a phase diagram expanded with increase in shear rate. At a given shear rate, the region of stable emulsion and the nature of emulsion (water-in-oil or oil-in-water) was observed to depend on hydrophilic-hydrophobic balance of the hybrid silicone emulsifier. At a fixed amount of modification, the non-ionically modified silicone stabilized an oil-in-water emulsion, whereas the ionic silicones stabilized inverse water-in-oil emulsions. This was attributed to the greater hydrophilicity of the polyoxyethylene modified silicones than the ionic counterparts. In general, it is postulated that with progressive increase in hydrophilicity of hybrid silicone emulsifiers, their tendency to stabilize water-in-oil emulsion decreases with corresponding increase in oil-in-water emulsion. Further, this behavior is

Comparative silicone breast implant evaluation using mammography, sonography, and magnetic resonance imaging: experience with 59 implants.

PubMed

Ahn, C Y; DeBruhl, N D; Gorczyca, D P; Shaw, W W; Bassett, L W

1994-10-01

With the current controversy regarding the safety of silicone implants, the detection and evaluation of implant rupture are causing concern for both plastic surgeons and patients. Our study obtained comparative value analysis of mammography, sonography, and magnetic resonance imaging (MRI) in the detection of silicone implant rupture. Twenty-nine symptomatic patients (total of 59 silicone implants) were entered into the study. Intraoperative findings revealed 21 ruptured implants (36 percent). During physical examination, a positive "squeeze test" was highly suggestive of implant rupture. Mammograms were obtained of 51 implants (sensitivity 11 percent, specificity 89 percent). Sonography was performed on 57 implants (sensitivity 70 percent, specificity 92 percent). MRI was performed on 55 implants (sensitivity 81 percent, specificity 92 percent). Sonographically, implant rupture is demonstrated by the "stepladder sign." Double-lumen implants may appear as false-positive results for rupture on sonography. On MRI, the "linguine sign" represents disrupted fragments of a ruptured implant. The most reliable imaging modality for implant rupture detection is MRI, followed by sonogram. Mammogram is the least reliable. Our study supports the clinical indication and diagnostic value of sonogram and MRI in the evaluation of symptomatic breast implant patients.

Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

PubMed Central

Ren, Juan; Ward, Michael; Kinnell, Peter; Craddock, Russell; Wei, Xueyong

2016-01-01

Single crystal silicon (SCS) diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC) or silicon on insulator (SOI), for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively. PMID:26861332

Microfabrication of Silicon/Ceramic Hybrid Cantilever for Scanning Probe Microscope and Sensor Applications

NASA Astrophysics Data System (ADS)

Wakayama, Takayuki; Kobayashi, Toshinari; Iwata, Nobuya; Tanifuji, Nozomi; Matsuda, Yasuaki; Yamada, Syoji

2003-12-01

We present here new cantilevers for scanning probe microscopy (SPM) and sensor applications, which consist of silicon cantilever beam and ceramic pedestal. Silicon is only used to make cantilever beams and tips. Precision-machinery-made ceramics replaces silicon pedestal part. The ceramics was recently developed by Sumikin Ceramics and Quarts Co., Ltd. and can be machined precisely with end mill cutting. Many silicon beams are fabricated at once from a wafer using batch fabrication method. Therefore, SPM probes can be fabricated in high productivity and in low cost. These beams are transferred with transfer technique and are bonded on the ceramic pedestal with epoxy glue. We demonstrate here atomic force microscope (AFM) and gas sensor applications of the hybrid structure. In a gas sensor application, the ends of the cantilever are selectively modified with zeolite crystals as a sensitive layer. The bonding strength is enough for each application.

Silicon entering through silicon utilizing organisms has biological effects in human beings

NASA Astrophysics Data System (ADS)

Shraddhamayananda, S.

2012-12-01

Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

Ultra-fast pulse propagation in nonlinear graphene/silicon ridge waveguide

NASA Astrophysics Data System (ADS)

Liu, Ken; Zhang, Jian Fa; Xu, Wei; Zhu, Zhi Hong; Guo, Chu Cai; Li, Xiu Jian; Qin, Shi Qiao

2015-11-01

We report the femtosecond laser propagation in a hybrid graphene/silicon ridge waveguide with demonstration of the ultra-large Kerr coefficient of graphene. We also fabricated a slot-like graphene/silicon ridge waveguide which can enhance its effective Kerr coefficient 1.5 times compared with the graphene/silicon ridge waveguide. Both transverse-electric-like (TE-like) mode and transverse-magnetic-like (TM-like) mode are experimentally measured and numerically analyzed. The results show nonlinearity dependence on mode polarization not in graphene/silicon ridge waveguide but in slot-like graphene/silicon ridge waveguide. Great spectral broadening was observed due to self-phase modulation (SPM) after propagation in the hybrid waveguide with length of 2 mm. Power dependence property of the slot-like hybrid waveguide is also measured and numerically analyzed. The results also confirm the effective Kerr coefficient estimation of the hybrid structures. Spectral blue shift of the output pulse was observed in the slot-like graphene/silicon ridge waveguide. One possible explanation is that the blue shift was caused by the ultra-fast free carrier effect with the optical absorption of the doped graphene. This interesting effect can be used for soliton compression in femtosecond region. We also discussed the broadband anomalous dispersion of the Kerr coefficient of graphene.

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

NASA Astrophysics Data System (ADS)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Improvement of screening methods for silicon planar semiconductor devices

NASA Technical Reports Server (NTRS)

Berger, W. M.

1972-01-01

The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

THE USE OF SILICONES IN DERMATOLOGY

PubMed Central

LeVan, Paul; Sternberg, Thomas H.; Newcomer, Victor D.

1954-01-01

A cosmetically acceptable lotion containing a silicone protectant, a keratolytic, a bacteriocidal agent and antipruritic substances, was clinically tested in 208 persons with various dermatoses. Twenty-four-hour closed patch tests on humans and intradermal tests in laboratory animals indicate the lotion not to be a sensitizer. Subacute and chronic housewives' eczema and contact dermatitis of the hands, uncomplicated “diaper rash,” periaural dermatitis due to excessive moisture, and certain hyperkeratotic dermatoses responded satisfactorily to the use of the lotion. PMID:13190431

Studies of implanted iron in silicon by channeling and Rutherford backscattering

NASA Technical Reports Server (NTRS)

Wang, P. W.; Cheng, H. S.; Gibson, W. M.; Corbett, J. W.

1986-01-01

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrauwen, Jonathan; Thourhout, Dries van; Baets, Roel

Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300 deg. C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300 deg. C. We presentmore » elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.« less

Crystalline silicon growth in nickel/a-silicon bilayer

NASA Astrophysics Data System (ADS)

Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam

2013-02-01

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 °C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Silicon micro-mold

DOEpatents

Morales, Alfredo M [Livermore, CA

2006-10-24

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

A useful method to overcome the difficulties of applying silicone gel sheet on irregular surfaces.

PubMed

Grella, Roberto; Nicoletti, Gianfranco; D'Ari, Antonio; Romanucci, Vincenza; Santoro, Mariangela; D'Andrea, Francesco

2015-04-01

To date, silicone gel and silicone occlusive plates are the most useful and effective treatment options for hypertrophic scars (surgical and traumatic). Use of silicone sheeting has also been demonstrated to be effective in the treatment of minor keloids in association with corticosteroid intralesional infiltration. In our practice, we encountered four problems: maceration, rashes, pruritus and infection. Not all patients are able to tolerate the cushion, especially children, and certain anatomical regions as the face and the upper chest are not easy to dress for obvious social, psychological and aesthetic reasons. In other anatomical regions, it is also difficult to obtain adequate compression and occlusion of the scar. To overcome such problems of applying silicone gel sheeting, we tested the use of liquid silicone gel (LSG) in the treatment of 18 linear hypertrophic scars (HS group) and 12 minor keloids (KS group) as an alternative to silicone gel sheeting or cushion. Objective parameters (volume, thickness and colour) and subjective symptoms such as pain and pruritus were examined. Evaluations were made when the therapy started and after 30, 90 and 180 days of follow-up. After 90 days of treatment with silicone gel alone (two applications daily), HS group showed a significant improvement in terms of volume decrease, reduced inflammation and redness and improved elasticity. In conclusion, on the basis of our clinical data, we find LSG to be a useful method to overcome the difficulties of applying silicone gel sheeting on irregular surface. © 2013 The Authors. International Wound Journal © 2013 Medicalhelplines.com Inc and John Wiley & Sons Ltd.

Biofunctionalization on alkylated silicon substrate surfaces via "click" chemistry.

PubMed

Qin, Guoting; Santos, Catherine; Zhang, Wen; Li, Yan; Kumar, Amit; Erasquin, Uriel J; Liu, Kai; Muradov, Pavel; Trautner, Barbara Wells; Cai, Chengzhi

2010-11-24

Biofunctionalization of silicon substrates is important to the development of silicon-based biosensors and devices. Compared to conventional organosiloxane films on silicon oxide intermediate layers, organic monolayers directly bound to the nonoxidized silicon substrates via Si-C bonds enhance the sensitivity of detection and the stability against hydrolytic cleavage. Such monolayers presenting a high density of terminal alkynyl groups for bioconjugation via copper-catalyzed azide-alkyne 1,3-dipolar cycloaddition (CuAAC, a "click" reaction) were reported. However, yields of the CuAAC reactions on these monolayer platforms were low. Also, the nonspecific adsorption of proteins on the resultant surfaces remained a major obstacle for many potential biological applications. Herein, we report a new type of "clickable" monolayers grown by selective, photoactivated surface hydrosilylation of α,ω-alkenynes, where the alkynyl terminal is protected with a trimethylgermanyl (TMG) group, on hydrogen-terminated silicon substrates. The TMG groups on the film are readily removed in aqueous solutions in the presence of Cu(I). Significantly, the degermanylation and the subsequent CuAAC reaction with various azides could be combined into a single step in good yields. Thus, oligo(ethylene glycol) (OEG) with an azido tag was attached to the TMG-alkyne surfaces, leading to OEG-terminated surfaces that reduced the nonspecific adsorption of protein (fibrinogen) by >98%. The CuAAC reaction could be performed in microarray format to generate arrays of mannose and biotin with varied densities on the protein-resistant OEG background. We also demonstrated that the monolayer platform could be functionalized with mannose for highly specific capturing of living targets (Escherichia coli expressing fimbriae) onto the silicon substrates.

Thermoelectric phonon-glass electron-crystal via ion beam patterning of silicon

NASA Astrophysics Data System (ADS)

Zhu, Taishan; Swaminathan-Gopalan, Krishnan; Stephani, Kelly; Ertekin, Elif

2018-05-01

Ion beam irradiation has recently emerged as a versatile approach to functional materials design. We show in this work that patterned defective regions generated by ion beam irradiation of silicon can create a phonon-glass electron-crystal (PGEC), a long-standing goal of thermoelectrics. By controlling the effective diameter of and spacing between the defective regions, molecular dynamics simulations suggest a reduction of the thermal conductivity by a factor of ˜20 is achievable. Boltzmann theory shows that the thermoelectric power factor remains largely intact in the damaged material. To facilitate the Boltzmann theory, we derive an analytical model for electron scattering with cylindrical defective regions based on partial-wave analysis. Together we predict a figure of merit of Z T ≈0.5 or more at room temperature for optimally patterned geometries of these silicon metamaterials. These findings indicate that nanostructuring of patterned defective regions in crystalline materials is a viable approach to realize a PGEC, and ion beam irradiation could be a promising fabrication strategy.

Bite force measurement system using pressure-sensitive sheet and silicone impression material.

PubMed

Ando, Katsuya; Fuwa, Yuji; Kurosawa, Masahiro; Kondo, Takamasa; Goto, Shigemi

2009-03-01

This study was conducted to reduce the bias in measured values caused by the thickness of materials used in occlusal examinations. To this end, a silicone impression material for bite force measurement and an experimental model of a simplified stomatognathic system were employed in this study. By means of this experimental model, results showed that the effect of bias toward the posterior arch could be reduced in the anterior-posterior distribution of bite forces and in the occlusal contact areas due to the thickness of the materials used in occlusal examinations.

High-resolution and fast-response fiber-optic temperature sensor using silicon Fabry-Pérot cavity.

PubMed

Liu, Guigen; Han, Ming; Hou, Weilin

2015-03-23

We report a fiber-optic sensor based on a silicon Fabry-Pérot cavity, fabricated by attaching a silicon pillar on the tip of a single-mode fiber, for high-resolution and high-speed temperature measurement. The large thermo-optic coefficient and thermal expansion coefficient of the silicon material give rise to an experimental sensitivity of 84.6 pm/°C. The excellent transparency and large refractive index of silicon over the infrared wavelength range result in a visibility of 33 dB for the reflection spectrum. A novel average wavelength tracking method has been proposed and demonstrated for sensor demodulation with improved signal-to-noise ratio, which leads to a temperature resolution of 6 × 10⁻⁴ °C. Due to the high thermal diffusivity of silicon, a response time as short as 0.51 ms for a sensor with an 80-µm-diameter and 200-µm-long silicon pillar has been experimentally achieved, suggesting a maximum frequency of ~2 kHz can be reached, to address the needs for highly dynamic environmental variations such as those found in the ocean.

The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

NASA Technical Reports Server (NTRS)

Fripp, A. L., Jr.

1974-01-01

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

PubMed

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Lithium insertion in carbonaceous materials containing silicon

NASA Astrophysics Data System (ADS)

Wilson, Alfred Macdonald

Three different series of silicon-containing carbonaceous materials were synthesized for use as anodes in lithium ion cells. Disordered (or pregraphitic) carbons containing nanodispersed silicon were prepared by the chemical vapour deposition (CVD) of various chlorosilanes (SiClsb4, (CHsb3)sb2Clsb2Si, and (CHsb3)sb3ClSi) with benzene in two different apparatuses. Silicon oxycarbide glasses were synthesized by the pyrolysis of over 50 silicon-containing polymers at various temperatures, although the principal materials in the study were prepared at 1000sp°C. Finally, materials which we believe to be similar to disordered carbons containing nanodispersed silicon were prepared by the pyrolysis of various blends of pitches with polysilanes. Powder X-ray diffraction was used to learn about the structure of all the materials made. Thermal gravimetric analysis was used to determine the silicon content in the CVD materials and, when coupled to a residual gas analyzer, to study the decomposition process of the polymers. Near edge X-ray absorption spectroscopy measurements of the silicon L- and K-edges of CVD materials and the silicon K-edges of silicon oxycarbides were used to learn about local chemical environments of the silicon atoms. Lithium metal electrochemical test cells of the silicon-containing CVD materials showed larger capacities (up to 500 mAh/g) than pure carbons prepared in the same way (˜300 mAh/g). The additional capacity was observed to be centered near 0.4 V on charge, the average voltage observed for the removal of lithium from a silicon-lithium alloy. Chemical analysis showed that the stoichiometries of materials made by polymer pyrolysis were distributed over a well-defined region in the Si-O-C Gibbs phase diagram. An interesting series of materials is found near the line in the Si-O-C Gibbs triangle connecting carbon to SiOsb{1.3}. Lithium metal electrochemical test cells made using all the silicon oxycarbides synthesized showed that a stoichiometry

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

PubMed

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-10-07

Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography.

PubMed

Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

2017-01-01

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

NASA Astrophysics Data System (ADS)

Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

2017-12-01

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Regional Eco-hydrologic Sensitivity to Projected Amazonian Land Use Scenarios

NASA Astrophysics Data System (ADS)

Knox, R. G.; Longo, M.; Zhang, K.; Levine, N. M.; Moorcroft, P. R.; Bras, R. L.

2011-12-01

Given business as usual land-use practices, it is estimated that by 2050 roughly half of the Amazon's pre-anthropogenic closed-canopy forest stands would remain. Of this, eight of the Amazon's twelve major hydrologic basins would lose more than half of their forest cover to deforestation. With the availability of these land-use projections, we may start to question the associated response of the region's hydrologic climate to significant land-cover change. Here the Ecosystem-Demography Model 2 (EDM2, a dynamic and spatially distributed terrestrial model of plant structure and composition, succession, disturbance and thermodynamic transfer) is coupled with the Brazilian Regional Atmospheric Model (BRAMS, a three-dimensional limited area model of the atmospheric fluid momentum equations and physics parameterizations for closing the system of equations at the lower boundary, convection, radiative transfer, microphysics, etc). This experiment conducts decadal simulations, framed with high-reliability lateral boundary conditions of reanalysis atmospheric data (ERA-40 interim) and variable impact of land-use scenarios (SimAmazonia). This is done by initializing the regional ecosystem structure with both aggressive and conservationist deforestation scenarios, and also by differentially allowing and not-allowing dynamic vegetation processes. While the lateral boundaries of the simulation will not reflect the future climate in the region, reanalysis data has provided improved realism as compared to results derived from GCM boundary data. Therefore, the ecosystem response (forest composition and structure) and the time-space patterns of hydrologic information (soil moisture, rainfall, evapotranspiration) are objectively compared in the context of a sensitivity experiment, as opposed to a forecast. The following questions are addressed. How do aggressive and conservative scenarios of Amazonian deforestation effect the regional patterning of hydrologic information in the

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Release of low molecular weight silicones and platinum from silicone breast implants.

PubMed

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

NASA Astrophysics Data System (ADS)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

Diffusion Bonding of Silicon Carbide Ceramics using Titanium Interlayers

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, James D.

2006-01-01

Robust joining approaches for silicon carbide ceramics are critically needed to fabricate leak free joints with high temperature mechanical capability. In this study, titanium foils and physical vapor deposited (PVD) titanium coatings were used to form diffusion bonds between SiC ceramics using hot pressing. Silicon carbide substrate materials used for bonding include sintered SiC and two types of CVD SiC. Microscopy results show the formation of well adhered diffusion bonds. The bond strengths as determined from pull tests are on the order of several ksi, which is much higher than required for a proposed application. Microprobe results show the distribution of silicon, carbon, titanium, and other minor elements across the diffusion bond. Compositions of several phases formed in the joint region were identified. Potential issues of material compatibility and optimal bond formation will also be discussed.

Development of high-efficiency solar cells on silicon web

NASA Technical Reports Server (NTRS)

Meier, D. L.; Greggi, J.; Rai-Choudhury, P.

1986-01-01

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

Ultracompact splitter for submicrometer silicon-on-insulator rib waveguides.

PubMed

Koster, Alain; Cassan, Eric; Laval, Suzanne; Vivien, Laurent; Pascal, Daniel

2004-11-01

An ultracompact and efficient 1 x 2 splitter for submicrometer silicon-on-insulator rib waveguides using a star coupler is reported. The structure proposed here is decidedly smaller than the usual splitters such as multi-mode interference or Y-branch devices and much less sensitive to technological fluctuations. Design of the compact splitter is optimized at lambda = 1.31 microm with the effective-index method and a two-dimensional beam-propagation method. The excess losses are lower than 0.15 dB, and the dependence of the losses on wavelength between 1.23 and 1.63 microm is almost flat (variation less than 0.04 dB), which makes the device very interesting for coarse wavelength-division multiplexing applications within the silicon photonic technology.

Hydrogen incorporation and radiation induced dynamics in metal-oxide-silicon structures: A study using nuclear reaction analysis

NASA Astrophysics Data System (ADS)

Briere, M. A.

Resonant Nuclear Reaction Analysis (NRA), using the H-1/N-15, alpha gamma/c-12 reaction at 6.4 MeV, is successfully applied to the investigation of hydrogen incorporation and radiation induced migration in metal oxide silicon structures. The influence of processing parameters on the H content of thermal oxides, with and without gate material present, is studied. Hydrogen accumulation at the Si-SiO2 interface is reproducibly demonstrated for as-oxidized samples, as well as for oxides exposed to H2 containing atmospheres during subsequent thermal processing. The migration of hydrogen, from the bulk oxide to the silicon oxide interface during NRA, is investigated. It is found that the cross section for this migration, per incident N-15 ion, depends on the sample processing history. It is argued that the release is due to electron capture at Si-OH sites and that the migration is driven by reductions in the interfacial free energy associated with the incorporation of hydrogen within the strained oxide region. A similar migration of hydrogen during irradiation with 2.5 MeV electrons is presented, which suggests that the migration occurs preferentially under applied fields which are directed to the silicon interface. It is argued that this bias effect is due to holes, which modify the interfacial region so as to increase hydrogen solubility, that is explained by the diffusivity of the hydrogen species during N-15 irradiation, which suggest identification as neutral atomic hydrogen. The spatial distribution of hydrogen at the Si-SiO2 interface is shown to be confined to within ca. 2 nm of the metallurgical boundary, in agreement with measurements of the location of oxide charge states, paramagnetic centers, as well as the width of the strained transition region in the neighborhood of this interface. A direct correlation between the hydrogen content of the bulk oxide and the radiation generated oxide charges and interface states is presented. These data provide strong

Silicon X-ray line emission from solar flares and active regions

NASA Technical Reports Server (NTRS)

Parkinson, J. H.; Wolff, R. S.; Kestenbaum, H. L.; Ku, W. H.-M.; Lemen, J. R.; Long, K. S.; Novick, R.; Suozzo, R. J.; Weisskopf, M. C.

1978-01-01

New observations of solar flare and active region X-ray spectra obtained with the Columbia University instrument on OSO-8 are presented and discussed. The high sensitivity of the graphite crystal panel has allowed both line and continuum spectra to be served with moderate spectral resolution. Observations with higher spectral resolution have been made with a panel of pentaerythritol crystals. Twenty-nine lines between 1.5 and 7.0 A have been resolved and identified, including several dielectronic recombination satellite lines to Si XIV and Si XIII lines which have been observed for the first time. It has been found that thermal continuum models specified by single values of temperature and emission measure have fitted the data adequately, there being good agreement with the values of these parameters derived from line intensity ratios.

The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

NASA Astrophysics Data System (ADS)

Eremin, V.; Shepelev, A.; Verbitskaya, E.; Zamantzas, C.; Galkin, A.

2018-05-01

The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity for the detector operation at the temperature of 1.9-10 K. The detectors from n-type silicon with the resistivity of 10, 4.5, and 0.5 kΩ cm were investigated at the temperature from 293 up to 7 K by the Transient Current Technique with a 660 nm pulse laser and alpha-particles. The shapes of the detector current pulse response allowed revealing a paradox in the properties of shallow donors of phosphorus, i.e., native dopants in the n-type Si. There was no carrier freeze-out on the phosphorus energy levels in the space charge region (SCR), and they remained positively charged irrespective of temperature, thus limiting the depleted region depth. As for the base region of a partially depleted detector, the levels became neutral at T < 28 K, which transformed silicon to an insulator. The reduction of the activation energy for carrier emission in the detector SCR estimated in the scope of the Poole-Frenkel effect failed to account for the impact of the electric field on the properties of phosphorus levels. The absence of carrier freeze-out in the SCR justifies the choice of high resistivity silicon as the only proper material for detector operation in a fully depleted mode at extremely low temperature.

Tailoring the sensitivity of initiating explosives

NASA Astrophysics Data System (ADS)

Manner, Virginia W.; Preston, Daniel N.; Snyder, Christopher J.; Dattelbaum, Dana M.; Tappan, Bryce C.

2017-01-01

Pentaerythritol tetranitrate (PETN) is a very common nitrate ester explosive that has been widely studied due to its use in military and commercial explosives. Recent experimental work and calculations have shown that substituting the central carbon atom of PETN with a silicon atom results in an extremely sensitive contact explosive. We have attempted to develop PETN derivatives which are less sensitive, by attaching hydrogen, amino, and methyl groups to the central carbon atom, and substituting the central carbon atom (and one -CH2ONO2 group) with phosphorous oxide. We relate the handling sensitivity properties of each PETN derivative to its structure, and discuss the role of the central atom, oxygen balance, thermal stability, and inter- and intramolecular hydrogen bonding on impact sensitivity.

Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

NASA Astrophysics Data System (ADS)

Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

2016-08-01

Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

Chronic Conjunctivitis due to Nocardia nova Complex Formation on a Silicone Stent: A Case Report and Review of the Literature.

PubMed

Micheletti, John M; Agrawal, Megha; Matoba, Alice Y; Marx, Douglas P

2015-01-01

Nocardial conjunctivitis associated with silicone tubing is an extremely rare finding. The authors present a case of a 52-year-old woman with previous dacryocystorhinostomy and silicone tube placement 3 years prior who presented with OD redness and discharge for 1 week. On examination, the patient was noted to have mucoid discharge and crusting surrounding the silicone tube. The tube debris was sampled, and the culture was positive for Nocardia nova complex sensitive to trimethoprim/sulfamethoxazole and amikacin. Silicone tube colonization and N. nova complex conjunctivitis are both rare but should be considered in the differential diagnosis of patients with indwelling silicone tubes presenting with chronic conjunctivitis resistant to fluoroquinolones and tobramycin.

Continuous planar phospholipid bilayer supported on porous silicon thin film reflector.

PubMed

Cunin, Frédérique; Milhiet, Pierre-Emmanuel; Anglin, Emily; Sailor, Michael J; Espenel, Cédric; Le Grimellec, Christian; Brunel, Daniel; Devoisselle, Jean-Marie

2007-10-01

Reconstituting artificial membranes for in vitro studies of cell barrier mechanisms and properties is of major interest in biology. Here, artificial membranes supported on porous silicon photonic crystal reflectors are prepared and investigated. The materials are of interest for label-free probing of supported membrane events such as protein binding, molecular recognition, and transport. The porous silicon substrates are prepared as multilayered films consisting of a periodically varying porosity, with pore dimensions of a few nanometers in size. Planar phospholipid bilayers are deposited on the topmost surface of the oxidized hydrophilic mesoporous silicon films. Atomic force microscopy provides evidence of continuous bilayer deposition at the surface, and optical measurements indicate that the lipids do not significantly infiltrate the porous region. The presence of the supported bilayer does not obstruct the optical spectrum from the porous silicon layer, suggesting that the composite structures can act as effective optical biosensors.

Highly sensitive and selective detection of dopamine using one-pot synthesized highly photoluminescent silicon nanoparticles.

PubMed

Zhang, Xiaodong; Chen, Xiaokai; Kai, Siqi; Wang, Hong-Yin; Yang, Jingjing; Wu, Fu-Gen; Chen, Zhan

2015-03-17

A simple and highly efficient method for dopamine (DA) detection using water-soluble silicon nanoparticles (SiNPs) was reported. The SiNPs with a high quantum yield of 23.6% were synthesized by using a one-pot microwave-assisted method. The fluorescence quenching capability of a variety of molecules on the synthesized SiNPs has been tested; only DA molecules were found to be able to quench the fluorescence of these SiNPs effectively. Therefore, such a quenching effect can be used to selectively detect DA. All other molecules tested have little interference with the dopamine detection, including ascorbic acid, which commonly exists in cells and can possibly affect the dopamine detection. The ratio of the fluorescence intensity difference between the quenched and unquenched cases versus the fluorescence intensity without quenching (ΔI/I) was observed to be linearly proportional to the DA analyte concentration in the range from 0.005 to 10.0 μM, with a detection limit of 0.3 nM (S/N = 3). To the best of our knowledge, this is the lowest limit for DA detection reported so far. The mechanism of fluorescence quenching is attributed to the energy transfer from the SiNPs to the oxidized dopamine molecules through Förster resonance energy transfer. The reported method of SiNP synthesis is very simple and cheap, making the above sensitive and selective DA detection approach using SiNPs practical for many applications.

Asymmetric resonance response analysis of a thermally excited silicon microcantilever for mass-sensitive nanoparticle detection

NASA Astrophysics Data System (ADS)

Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Wasisto, Hutomo Suryo; Peiner, Erwin

2017-06-01

The asymmetric resonance responses of a thermally actuated silicon microcantilever of a portable, cantilever-based nanoparticle detector (Cantor) is analysed. For airborne nanoparticle concentration measurements, the cantilever is excited in its first in-plane bending mode by an integrated p-type heating actuator. The mass-sensitive nanoparticle (NP) detection is based on the resonance frequency (f0) shifting due to the deposition of NPs. A homemade phase-locked loop (PLL) circuit is developed for tracking of f0. For deflection sensing the cantilever contains an integrated piezo-resistive Wheatstone bridge (WB). A new fitting function based on the Fano resonance is proposed for analysing the asymmetric resonance curves including a method for calculating the quality factor Q from the fitting parameters. To obtain a better understanding, we introduce an electrical equivalent circuit diagram (ECD) comprising a series resonant circuit (SRC) for the cantilever resonator and voltage sources for the parasitics, which enables us to simulate the asymmetric resonance response and discuss the possible causes. Furthermore, we compare the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator revealing parasitic heating of the WB as the origin of the asymmetry. Moreover, we are able to model the phase component of the sensor output using the ECD. Knowing and understanding the phase response is crucial to the design of the PLL and thus the next generation of Cantor.

Characterization of silicon carbide and diamond detectors for neutron applications

NASA Astrophysics Data System (ADS)

Hodgson, M.; Lohstroh, A.; Sellin, P.; Thomas, D.

2017-10-01

The presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors. A thorough direct performance comparison of the detection capabilities of semi-insulating silicon carbide (SiC-SI), single crystal diamond (D-SC), polycrystalline diamond (D-PC) and a self-biased epitaxial silicon carbide (SiC-EP) detector has been conducted and benchmarked against a commercial silicon PIN (Si-PIN) diode, in a wide range of alpha (Am-241), beta (Sr/Y-90), ionizing photon (65 keV to 1332 keV) and neutron radiation fields (including 1.2 MeV to 16.5 MeV mono-energetic neutrons, as well as neutrons from AmBe and Cf-252 sources). All detectors were shown to be able to directly detect and distinguish both the different radiation types and energies by using a simple energy threshold discrimination method. The SiC devices demonstrated the best neutron energy discrimination ratio (E\\max (n=5 MeV)/E\\max (n=1 MeV)  ≈5), whereas a superior neutron/photon cross-sensitivity ratio was observed in the D-PC detector (E\\max (AmBe)/E\\max (Co-60)  ≈16). Further work also demonstrated that the cross-sensitivity ratios can be improved through use of a simple proton-recoil conversion layer. Stability issues were also observed in the D-SC, D-PC and SiC-SI detectors while under irradiation, namely a change of energy peak position and/or count rate with time (often referred to as the polarization effect). This phenomenon within the detectors was non-debilitating over the time period tested (> 5 h) and, as such, stable operation was

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Nonformity of the electron density in amorphous silicon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ionova, E.N.; Cheremskoi, P.G.; Fedorenko, A.I.

1985-12-01

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

Nondestructive imaging of atomically thin nanostructures buried in silicon

PubMed Central

Gramse, Georg; Kölker, Alexander; Lim, Tingbin; Stock, Taylor J. Z.; Solanki, Hari; Schofield, Steven R.; Brinciotti, Enrico; Aeppli, Gabriel; Kienberger, Ferry; Curson, Neil J.

2017-01-01

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers. PMID:28782006

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

NASA Astrophysics Data System (ADS)

Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Bogdanov, A.; Shepelev, A.; Dehning, B.; Bartosik, M. R.; Alexopoulos, A.; Glaser, M.; Ravotti, F.; Sapinski, M.; Härkönen, J.; Egorov, N.; Galkin, A.

2017-03-01

Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9-4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9-4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

Observation of beta and X rays with 3-D-architecture silicon microstrip sensors

NASA Astrophysics Data System (ADS)

Kenney, C. J.; Parker, S. I.; Krieger, B.; Ludewigt, B.; Dubbs, T. P.; Sadrozinski, H.

2001-04-01

The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated. X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

A simple approach to patterned protein immobilization on silicon via electrografting from diazonium salt solutions.

PubMed

Flavel, Benjamin S; Gross, Andrew J; Garrett, David J; Nock, Volker; Downard, Alison J

2010-04-01

A highly versatile method utilizing diazonium salt chemistry has been developed for the fabrication of protein arrays. Conventional ultraviolet mask lithography was used to pattern micrometer sized regions into a commercial photoresist on a highly doped p-type silicon (100) substrate. These patterned regions were used as a template for the electrochemical grafting of the in situ generated p-aminobenzenediazonium cation to form patterns of aminophenyl film on silicon. Immobilization of biomolecules was demonstrated by coupling biotin to the aminophenyl regions followed by reaction with fluorescently labeled avidin and visualization with fluorescence microscopy. This simple patterning strategy is promising for future application in biosensor devices.

Effects of silicone hydrogel contact lens wear on ocular surface sensitivity to tactile, pneumatic mechanical, and chemical stimulation.

PubMed

Situ, Ping; Simpson, Trefford L; Jones, Lyndon W; Fonn, Desmond

2010-12-01

To determine the effects of silicone hydrogel lens wear and lens-solution interactions on ocular surface sensitivity. Forty-eight adapted lens wearers completed the study, which comprised two phases. Phase 1 included habitual lens wear, no lens wear (7 ± 3 days), and balafilcon A lenses (PV; PureVision; Bausch & Lomb, Rochester, NY) with a hydrogen peroxide-based regimen for 2 weeks; phase 2 included wear of PV with the use of a multipurpose solution containing either polyhexamethylene-biguanide (PHMB) or Polyquad/Aldox (Alcon Laboratories, Fort Worth, TX) preservative, each for 1 week, with a 2-week washout period between solutions. Tactile and pneumatic (mechanical and chemical) stimuli were delivered, and thresholds were determined by Cochet-Bonnet (Luneau Ophthalmologie, Chartres, France) and Belmonte (Cooperative Research Centre for Eye Research and Technology, Sydney, NSW, Australia) pneumatic esthesiometers, respectively. Corneal and conjunctival thresholds and staining scores were assessed at baseline, after 2 and 8 hours of lens wear on day 1 and at the end of each wearing cycle (2 hours). In phase 1, compared to the no-lens baseline, corneal tactile thresholds increased at the 1-day, 8-hour and the 2-week visits (P < 0.05), whereas conjunctival mechanical thresholds decreased at the 1-day, 2-hour and the 2-week visits (P < 0.05). In phase 2, the chemical thresholds were lower with PHMB-preserved solution compared with the Polyquad/Aldox system at the 1-day, 2-hour and the 1-week visits (P < 0.05). Staining scores correlated inversely with conjunctival chemical thresholds (all P < 0.05). Ocular surface sensitivity changed in adapted lens wearers, when lenses were refit after a no-lens interval and during lens wear with different care regimens. The corneal staining that was observed with certain lens-solution combinations was accompanied by sensory alteration of the ocular surface-that is, higher levels of staining correlated with increased conjunctival

Small-angle x-ray scattering in amorphous silicon: A computational study

NASA Astrophysics Data System (ADS)

Paudel, Durga; Atta-Fynn, Raymond; Drabold, David A.; Elliott, Stephen R.; Biswas, Parthapratim

2018-05-01

We present a computational study of small-angle x-ray scattering (SAXS) in amorphous silicon (a -Si) with particular emphasis on the morphology and microstructure of voids. The relationship between the scattering intensity in SAXS and the three-dimensional structure of nanoscale inhomogeneities or voids is addressed by generating large high-quality a -Si networks with 0.1%-0.3% volume concentration of voids, as observed in experiments using SAXS and positron annihilation spectroscopy. A systematic study of the variation of the scattering intensity in the small-angle scattering region with the size, shape, number density, and the spatial distribution of the voids in the networks is presented. Our results suggest that the scattering intensity in the small-angle region is particularly sensitive to the size and the total volume fraction of the voids, but the effect of the geometry or shape of the voids is less pronounced in the intensity profiles. A comparison of the average size of the voids obtained from the simulated values of the intensity, using the Guinier approximation and Kratky plots, with that of the same from the spatial distribution of the atoms in the vicinity of void surfaces is presented.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, Ken

1994-01-01

An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, E. V., E-mail: Ivanova@mail.ioffe.ru; Sitnikova, A. A.; Aleksandrov, O. V.

2016-06-15

It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters aremore » formed. This method of silicon-nanocluster formation is suggested for the first time.« less

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

PubMed Central

M. N, M. Nuzaihan; Hashim, U.; Md Arshad, M. K.; Ruslinda, A. Rahim; Rahman, S. F. A.; Fathil, M. F. M.; Ismail, Mohd. H.

2016-01-01

A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications. PMID:27022732

An in-vitro evaluation of silicone elastomer latex for topical drug delivery.

PubMed

Li, L C; Vu, N T

1995-06-01

A silicone elastomer latex was evaluated as a topical drug-delivery system. With the addition of a fumed silica and the removal of water, the latex produced elastomeric solid films. The water vapour permeability of the solid film was found to be a function of the film composition. An increase in silica content and the incorporation of a water-soluble component, PEG 3350, rendered the silicone elastomer-free film even more permeable to water vapour. The release of hydrocortisone from the elastomer film can be described by a matrix-diffusion-controlled mechanism. Drug diffusion is thought to occur through the hydrophobic silicone polymer network and the hydrated hydrophilic silica region in the film matrix. Silicone elastomer film with a higher silica content exhibited a faster drug-release rate. The addition of PEG 3350 to the film further enhanced the drug-release rate.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Detection of Critical LUCC Indices and Sensitive Watershed Regions Related to Lake Algal Blooms: A Case Study of Taihu Lake

PubMed Central

Lin, Chen; Ma, Ronghua; Su, Zhihu; Zhu, Qing

2015-01-01

Taihu Lake in China has suffered from severe eutrophication over the past 20 years which is partly due to significant land use/cover change (LUCC). There is an increasing need to detect the critical watershed region that significantly affects lake water degradation, which has great significance for environmental protection. However, previous studies have obtained conflicting results because of non–uniform lake indicators and inadequate time periods. To identify the sensitive LUCC indices and buffer distance regions, three lake divisions (Meiliang Lake, Zhushan Lake and Western Coastal region) and their watershed region within the Taihu Lake basin were chosen as study sites, the algal area was used as a uniform lake quality indicator and modeled with LUCC indices over the whole time series. Results showed that wetland (WL) and landscape index such as Shannon diversity index (SHDI) appeared to be sensitive LUCC indices when the buffer distance was less than 5 km, while agricultural land (AL) and landscape fragmentation (Ci) gradually became sensitive indices as buffer distances increased to more than 5 km. For the relationship between LUCC and lake algal area, LUCC of the WC region seems to have no significant effect on lake water quality. Conversely, LUCC within ML and ZS region influenced algal area of corresponding lake divisions greatly, while the most sensitive regions were found in 3 km to 5 km, rather than the whole catchment. These results will be beneficial for the further understanding of the relationship between LUCC and lake water quality, and will provide a practical basis for the identification of critical regions for lake. PMID:25642691

Ecological Sensitivity Evaluation of Tourist Region Based on Remote Sensing Image - Taking Chaohu Lake Area as a Case Study

NASA Astrophysics Data System (ADS)

Lin, Y.; Li, W. J.; Yu, J.; Wu, C. Z.

2018-04-01

Remote sensing technology is of significant advantages for monitoring and analysing ecological environment. By using of automatic extraction algorithm, various environmental resources information of tourist region can be obtained from remote sensing imagery. Combining with GIS spatial analysis and landscape pattern analysis, relevant environmental information can be quantitatively analysed and interpreted. In this study, taking the Chaohu Lake Basin as an example, Landsat-8 multi-spectral satellite image of October 2015 was applied. Integrated the automatic ELM (Extreme Learning Machine) classification results with the data of digital elevation model and slope information, human disturbance degree, land use degree, primary productivity, landscape evenness , vegetation coverage, DEM, slope and normalized water body index were used as the evaluation factors to construct the eco-sensitivity evaluation index based on AHP and overlay analysis. According to the value of eco-sensitivity evaluation index, by using of GIS technique of equal interval reclassification, the Chaohu Lake area was divided into four grades: very sensitive area, sensitive area, sub-sensitive areas and insensitive areas. The results of the eco-sensitivity analysis shows: the area of the very sensitive area was 4577.4378 km2, accounting for about 37.12 %, the sensitive area was 5130.0522 km2, accounting for about 37.12 %; the area of sub-sensitive area was 3729.9312 km2, accounting for 26.99 %; the area of insensitive area was 382.4399 km2, accounting for about 2.77 %. At the same time, it has been found that there were spatial differences in ecological sensitivity of the Chaohu Lake basin. The most sensitive areas were mainly located in the areas with high elevation and large terrain gradient. Insensitive areas were mainly distributed in slope of the slow platform area; the sensitive areas and the sub-sensitive areas were mainly agricultural land and woodland. Through the eco-sensitivity analysis of

Diagnostics of hydrogen plasma with in situ optical emission and silicon probes

NASA Astrophysics Data System (ADS)

Lee, Szetsen; Chung, Yi-Jie

2005-11-01

In this work, an approach has been adopted to explore plasma properties by combining an in situ optical emission technique with a contact angle measurement. Hydrogen plasma was generated with a radio-frequency power source. The plasma parameters such as number densities and temperatures were derived from the optical emission spectroscopic data. Small silicon chips were placed at various positions inside a discharge tube as probes for the plasma conditions. The hydrogen-plasma-treated silicon chip surfaces were characterized with the contact angle measurement method. The change of wettability on the silicon surface was observed with various plasma treatment times. The spectroscopic information about the plasma is correlated with the results of the surface characterization. It is found that the rate of the increasing hydrophilicity is sensitive to the amount of helium added and the location in the discharge tube. A simple model describing the relation between the surface coverage area of water droplet and the variation of contact angle has been established. We have proposed plasma excitation and reaction mechanisms for the observed correlation between plasma temperatures and the wettability of the silicon surface. It shows that small silicon chips can serve as "litmus tests" for the plasma conditions without introducing too much perturbation.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab

2013-12-23

We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1994-12-27

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Greenland Regional and Ice Sheet-wide Geometry Sensitivity to Boundary and Initial conditions

NASA Astrophysics Data System (ADS)

Logan, L. C.; Narayanan, S. H. K.; Greve, R.; Heimbach, P.

2017-12-01

Ice sheet and glacier model outputs require inputs from uncertainly known initial and boundary conditions, and other parameters. Conservation and constitutive equations formalize the relationship between model inputs and outputs, and the sensitivity of model-derived quantities of interest (e.g., ice sheet volume above floatation) to model variables can be obtained via the adjoint model of an ice sheet. We show how one particular ice sheet model, SICOPOLIS (SImulation COde for POLythermal Ice Sheets), depends on these inputs through comprehensive adjoint-based sensitivity analyses. SICOPOLIS discretizes the shallow-ice and shallow-shelf approximations for ice flow, and is well-suited for paleo-studies of Greenland and Antarctica, among other computational domains. The adjoint model of SICOPOLIS was developed via algorithmic differentiation, facilitated by the source transformation tool OpenAD (developed at Argonne National Lab). While model sensitivity to various inputs can be computed by costly methods involving input perturbation simulations, the time-dependent adjoint model of SICOPOLIS delivers model sensitivities to initial and boundary conditions throughout time at lower cost. Here, we explore both the sensitivities of the Greenland Ice Sheet's entire and regional volumes to: initial ice thickness, precipitation, basal sliding, and geothermal flux over the Holocene epoch. Sensitivity studies such as described here are now accessible to the modeling community, based on the latest version of SICOPOLIS that has been adapted for OpenAD to generate correct and efficient adjoint code.

High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

PubMed Central

Mohammed, Ahmed A. S.; Moussa, Walied A.; Lou, Edmond

2011-01-01

This paper presents the experimental evaluation of a new piezoresistive MEMS strain sensor. Geometric characteristics of the sensor silicon carrier have been employed to improve the sensor sensitivity. Surface features or trenches have been introduced in the vicinity of the sensing elements. These features create stress concentration regions (SCRs) and as a result, the strain/stress field was altered. The improved sensing sensitivity compensated for the signal loss. The feasibility of this methodology was proved in a previous work using Finite Element Analysis (FEA). This paper provides the experimental part of the previous study. The experiments covered a temperature range from −50 °C to +50 °C. The MEMS sensors are fabricated using five different doping concentrations. FEA is also utilized to investigate the effect of material properties and layer thickness of the bonding adhesive on the sensor response. The experimental findings are compared to the simulation results to guide selection of bonding adhesive and installation procedure. Finally, FEA was used to analyze the effect of rotational/alignment errors. PMID:22319384

Hybridization assay of insect antifreezing protein gene by novel multilayered porous silicon nucleic acid biosensor.

PubMed

Lv, Xiaoyi; Chen, Liangliang; Zhang, Hongyan; Mo, Jiaqing; Zhong, Furu; Lv, Changwu; Ma, Ji; Jia, Zhenhong

2013-01-15

A fabrication of a novel simple porous silicon polybasic photonic crystal with symmetrical structure has been reported as a nucleic acid biosensor for detecting antifreeze protein gene in insects (Microdera puntipennis dzhungarica), which would be helpful in the development of some new transgenic plants with tolerance of freezing stress. Compared to various porous silicon-based photonic configurations, porous silicon polytype layered structure is quite easy to prepare and shows more stability; moreover, polybasic photonic crystals with symmetrical structure exhibit interesting optical properties with a sharp resonance in the reflectance spectrum, giving a higher Q factor which causes higher sensitivity for sensing performance. In this experiment, DNA oligonucleotides were immobilized into the porous silicon pores using a standard crosslink chemistry method. The porous silicon polybasic symmetrical structure sensor possesses high specificity in performing controlled experiments with non-complementary DNA. The detection limit was found to be 21.3nM for DNA oligonucleotides. The fabricated multilayered porous silicon-based DNA biosensor has potential commercial applications in clinical chemistry for determination of an antifreeze protein gene or other genes. Copyright © 2012 Elsevier B.V. All rights reserved.

Dislocation-free strained silicon-on-silicon by in-place bonding

NASA Astrophysics Data System (ADS)

Cohen, G. M.; Mooney, P. M.; Paruchuri, V. K.; Hovel, H. J.

2005-06-01

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result, the slabs maintain their registration and are referred to as "bonded in-place". We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic trilayer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

2009-03-01

We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

Phase-shifter using submicron silicon waveguide couplers with ultra-small electro-mechanical actuator.

PubMed

Ikeda, Taro; Takahashi, Kazunori; Kanamori, Yoshiaki; Hane, Kazuhiro

2010-03-29

Phase shifter is an important part of optical waveguide circuits as used in interferometer. However, it is not always easy to generate a large phase shift in a small region. Here, a variable phase-shifter operating as delay-line of silicon waveguide was designed and fabricated by silicon micromachining. The proposed phase-shifter consists of a freestanding submicron-wide silicon waveguide with two waveguide couplers and an ultrasmall silicon comb-drive actuator. The position of the freestanding waveguide is moved by the actuator to vary the total optical path. Phase-shift was measured in a Mach-Zehnder interferometer to be 3.0pi at the displacement of 1.0 mum at the voltage of 31 V. The dimension of the fabricated device is 50microm wide and 85microm long.

Development of Silicon-substrate Based Fabry-Perot Etalons for far-IR Astrophysics

NASA Astrophysics Data System (ADS)

Stacey, Gordon

We propose to design, construct and test silicon-substrate-based (SSB) mirrors necessary for high performance Fabry-Perot interferometers (FPIs) to be used in the 25-40 um mid-IR band. These mirrors will be fabricated from silicon wafers that are anti-reflection coated (ARC) by micromachining an artificial dielectric meta-material on one side, and depositing optimized gold-metalized patterns on the other. Two mirrors with the metalized surfaces facing one-another form the Fabry-Perot cavity, also known as the FPI etalon. The exterior surfaces of the silicon mirrors are anti-reflection coated for both good transmission in the science band, and to prevent unwanted parasitic FPI cavities from forming between the four surfaces (one anti-reflection coated, one metalized for each mirror) of the FPI etalon. The mirrors will be tested within a Miniature Cryogenic Scanning Fabry-Perot (MCSF) that we have designed through support of a previous NASA grant (NNX09AB95G). This design is based on our long experience in constructing and using scanning FPI in the mid-IR to submm range, and fits within test-beds we have on hand that are suitable for both warm and cold tests. The key technologies are the ARC and tuned mirrors that are enabled by silicon nano-machining techniques. The creation of these SSB mirrors promises greatly improved performance over previous versions of mid-IR to submm-band FPIs that are based on mirrors made from free-standing metal mesh stretched over support rings. Performance is improved both structurally and in terms of sensitivity, and is measured as the product of the cavity finesse times transmission. Our electromagnetic modeling suggests that SSB mirrors will improve this product by a factor of 2 over the best free standing mesh etalons available. This translates into a factor of sqrt(2) improvement in sensitivity per etalon, or a full factor of 2 when used in a tandem (dual etalon) FPI spectrometer. The SSB improvements are due to both the stiff (~ 0

Structural alloy with a protective coating containing silicon or silicon-oxide

DOEpatents

Natesan, K.

1992-01-01

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Mechanisms of Superplastic Deformation of Nanocrystalline Silicon Carbide Ceramics

DTIC Science & Technology