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Sample records for sio2 film induced

  1. Influence of outgassing organic contamination on the transmittance and laser-induced damage of SiO2 sol-gel antireflection film

    NASA Astrophysics Data System (ADS)

    Yang, Liang; Xiang, Xia; Miao, Xinxiang; Li, Zhijie; Zhou, Guorui.; Yan, Zhonghua; Yuan, Xiaodong; Zheng, Wanguo; Zu, Xiaotao

    2015-12-01

    The influence of organic contamination (rubber outgassing) on the transmittance of the SiO2 sol-gel antireflection (AR) film and laser-induced damage threshold (LIDT) at 355 nm for 3ω AR film and at 1064 nm for 1ω AR film is studied. The correlation between the contamination time and the transmittance loss/LIDT of 1ω/3ω AR film is also investigated both in atmospheric and vacuum environments. The results show that the transmittance loss increases with increasing contamination time, and the LIDT decreases with increasing contamination time for both in atmospheric and vacuum environments. In addition, the resistance against contamination of the 1ω film is stronger than 3ω film, and the contamination is more serious in vacuum than in an atmosphere environment for the same contamination time. Meanwhile, the damage mechanism is also discussed. It indicated that both the porous structure and photo-thermal absorption contribute to the decreasing LIDT of the sol-gel AR film.

  2. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  3. Large Electric Field-Enhanced-Hardness Effect in a SiO2 Film

    NASA Astrophysics Data System (ADS)

    Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

    2014-03-01

    Silicon dioxide films are extensively used in nano and micro-electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation-induced deformation during the friction measurements.

  4. Large Electric Field–Enhanced–Hardness Effect in a SiO2 Film

    PubMed Central

    Revilla, Reynier I.; Li, Xiao-Jun; Yang, Yan-Lian; Wang, Chen

    2014-01-01

    Silicon dioxide films are extensively used in nano and micro–electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation–induced deformation during the friction measurements. PMID:24681517

  5. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  6. Highly Luminescent Hybrid SiO2-Coated CdTe Quantum Dots Retained Initial Photoluminescence Efficiency in Sol-Gel SiO2 Film.

    PubMed

    Sun, Hongsheng; Xing, Yugui; Wu, Qinan; Yang, Ping

    2015-02-01

    A highly luminescent silica film was fabricated using tetraethyl orthosilicate (TEOS) and 3-aminopropyltrimethoxysilane (APS) through a controlled sol-gel reaction. The pre-hydrolysis of TEOS and APS which resulted in the mixture of TEOS and APS in a molecular level is a key for the formation of homogenous films. The aminopropyl groups in APS play an important role for obtaining homogeneous film with high photoluminescence (PL). Red-emitting hybrid SiO2-coated CdTe nano-crystals (NCs) were fabricated by a two-step synthesis including a thin SiO2 coating via a sol-gel process and a subsequent refluxing using green-emitting CdTe NCs. The hybrid SiO2-coated CdTe NCs were embedded in a functional SiO2 film via a two-step process including adding the NCs in SiO2 sol with a high viscosity and almost without ethanol and a subsequent spinning coating. The hybrid SiO2-coated CdTe NCs retained their initial PL efficiency (54%) in the film. Being encapsulated with the hybrid NCs in the film, no change on the absorption and PL spectra of red-emitting CdTe NCs (632 nm) was observed. This indicates the hybrid NCs is stable enough during preparation. This phenomenon is ascribed to the controlled sol-gel process and a hybrid SiO2 shell on CdTe NCs. Because these films exhibited high PL efficiency and stability, they will be utilizable for potential applications in many fields. PMID:26353691

  7. Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

    NASA Astrophysics Data System (ADS)

    Utsumi, Jun; Ide, Kensuke; Ichiyanagi, Yuko

    2016-02-01

    The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25 MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

  8. Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

    NASA Astrophysics Data System (ADS)

    Güner, S.; Budak, S.; Gibson, B.; Ila, D.

    2014-08-01

    We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

  9. Strengthening sapphire at elevated temperatures by SiO 2 films

    NASA Astrophysics Data System (ADS)

    Feng, Li-Ping; Liu, Zheng-Tang; Li, Qiang

    2007-04-01

    SiO 2 films have been prepared on sapphire by radio frequency magnetron reactive sputtering in order to increase the optical and mechanical properties of infrared windows and domes of sapphire at elevated temperatures. Infrared transmission and flexural strength of uncoated and coated sapphires have been investigated at different temperatures. SiO 2 films were shown to have apparent antireflective effect on sapphire substrate at room temperature. With increasing temperature, the coated sapphires have larger average transmission than the uncoated ones. The temperature was proven to only weakly affect the absorption coefficient and antireflection capability of the deposited films. It is also indicated that the flexural strengths of the c-axis sapphire samples coated with SiO 2 films are increased by 1.2 and 1.5 times than those of uncoated at 600 and 800 °C, respectively.

  10. Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution

    NASA Astrophysics Data System (ADS)

    Kawahara, Hideo; Sakai, Y.; Goda, Takuji; Hishinuma, Akihiro; Takemura, Kazuo

    1991-08-01

    It has been reported in previous works on the LPD (liquid phase deposition) method that SiO2 film deposition could be made by utilizing the chemical transition from supersaturation to saturation in silica dissolution in H2SiF6 aqueous solution. In this study, the supersaturated state was obtained and maintained by employing the dependence of silica solubility on H2SiF6 solution temperature without a reaction initiator. As for the influence of the process parameters on SiO2 film properties, it came into notice that a dense film structure was obtained in the deposition at higher solution temperature (around 60 degree(s)C). As a result, transparent and crack-free thick SiO2 film over 10 microns was obtained by this advanced LPD method.

  11. Ion assisted deposition of SiO2 film from silicon

    NASA Astrophysics Data System (ADS)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  12. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching.

    PubMed

    Ghazaryan, Lilit; Kley, E-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-24

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures. PMID:27176497

  13. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

    NASA Astrophysics Data System (ADS)

    Ghazaryan, Lilit; Kley, E.-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-01

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  14. Anti-fogging nanofibrous SiO(2) and nanostructured SiO(2)-TiO(2) films made by rapid flame deposition and in situ annealing.

    PubMed

    Tricoli, Antonio; Righettoni, Marco; Pratsinis, Sotiris E

    2009-11-01

    Transparent, pure SiO(2), TiO(2), and mixed silica-titania films were (stochastically) deposited directly onto glass substrates by flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate and/or titanium tetra isopropoxide in xylene) and stabilized by in situ flame annealing. Silicon dioxide films consisted of a network of interwoven nanofibers or nanowires several hundred nm long and 10-15 nm thick, as determined by microscopy. These nanowire or nanofibrous films were formed by chemical vapor deposition (surface growth) on bare glass substrates during scalable combustion of precursor solutions at ambient conditions, for the first time to our knowledge, as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, titanium dioxide films consisted of nanoparticles 3-5 nm in diameter that were formed in the flame and deposited onto the glass substrate, resulting in highly porous, lace-like nanostructures. Mixed SiO(2)-TiO(2) films (40 mol % SiO(2)) had similar morphology to pure TiO(2) films. Under normal solar radiation, all such films having a minimal thickness of about 300 nm completely prevented fogging of the glass substrates. These anti-fogging properties were attributed to inhibition of water droplet formation by such super-hydrophilic coatings as determined by wetting angle measurements. Deactivated (without UV radiation) pure TiO(2) coatings lost their super-hydrophilicity and anti-fogging properties even though their wetting angle was reduced by their nanowicking. In contrast, SiO(2)-TiO(2) coatings exhibited the best anti-fogging performance at all conditions taking advantage of the high surface coverage by TiO(2) nanoparticles and the super-hydrophilic properties of SiO(2) on their surface. PMID:19621912

  15. Thermoelectric generators from SiO2/SiO2 + Ge nanolayer thin films modified by MeV Si ions

    NASA Astrophysics Data System (ADS)

    Budak, S.; Gulduren, E.; Allen, B.; Cole, J.; Lassiter, J.; Colon, T.; Muntele, C.; Alim, M. A.; Bhattacharjee, S.; Johnson, R. B.

    2015-01-01

    We prepared thermoelectric generator devices from 100 alternating layers of SiO2/SiO2 + Ge superlattice thin films using Magnetron DC/RF Sputtering. Rutherford Backscattering Spectrometry (RBS) and RUMP simulation software package were used to determine the proportions of Si and Ge in the grown multilayer films and the thickness of the grown multi-layer films. 5 MeV Si ion bombardments were performed using the AAMU-Pelletron ion beam accelerator, to form quantum clusters in the multi-layer superlattice thin films, in order to tailor the thermoelectrical and optical properties. We characterized the fabricated thermoelectric devices using cross-plane Seebeck coefficient, van der Pauw resistivity, mobility, density (carrier concentration), Hall Effect coefficient, Raman, Fluorescence, Photoluminescence, Atomic Force Microscopy (AFM) and Impedance analyzing measurements. Some suitable high energy ion fluences and thermal annealings caused some remarkable thermoelectrical and optical changes in the fabricated multilayer thin film systems.

  16. Effects of modifiers on the hydrophobicity of SiO2 films from nano-husk ash

    NASA Astrophysics Data System (ADS)

    Xu, Kejing; Sun, Qingwen; Guo, Yanqing; Dong, Shuhua

    2013-07-01

    Nano-husk ashes were prepared by burning rice-husk with self-propagating method. The super-hydrophobic SiO2 films from nano-husk ash were prepared by sol-gel method using hydroxy silicone oil (HSO), hexamethyldisilazane (HMS), or methyl triethoxysilane (MTS) as modifiers. The effects of modifiers on the hydrophobic property of SiO2 films were studied, and the performances were characterized by the XRD, UV-vis, BET, EDS, SEM, IR, and Contact Angle Analyzer. The results showed that the contact angle of SiO2 films was more than 160° when volume ratio of the modifiers to silicon-sodium solution (SSS) was 0.15. The mechanism of modifiers on SiO2 surfaces is a graft copolymerization. The hydrophobic groups in the modifiers replace the hydroxy groups on SiO2 surfaces and make SiO2 surfaces present super-hydrophobicity.

  17. Laser-induced chemical vapor deposition of SiO2

    NASA Astrophysics Data System (ADS)

    Boyer, P. K.; Roche, G. A.; Ritchie, W. H.; Collins, G. J.

    1982-04-01

    We have demonstrated rapid (3000 Å/min) photochemical deposition of silicon dioxide from gas phase donor molecules. An ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps. We have achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate. Although the SiO2 deposition rate was insensitive to substrate temperature from 20 to 600 °C, film quality noticeably improved above 200 °C. Metal-oxide-semiconductor capacitors were fabricated and characterized in order to measure SiO2 electrical properties. Film composition was investigated using Auger and infrared spectroscopy techniques and showed that the SiO2 is stoichiometric and contains less than 5% nitrogen.

  18. The hybrid photocatalyst of TiO2-SiO2 thin film prepared from rice husk silica

    NASA Astrophysics Data System (ADS)

    Klankaw, P.; Chawengkijwanich, C.; Grisdanurak, N.; Chiarakorn, Siriluk

    2012-03-01

    The TiO2-SiO2 thin film was prepared by self-assembly method by mixing SiO2 precursor with titanium precursor solution and aged to obtain a co-precipitation of silica and titanium crystals. Dip coating method was applied for thin film preparation on glass slide. The X-ray diffraction (XRD) of the self-assembly thin film had no characteristic property of SiO2 and even anatase TiO2 but indicated new crystal structure which was determined from the Fourier Transform Infrared Spectrophotometer (FTIR) as a hybridized Ti-O-Si bonding. The surface area and surface volume of the self-assembly sample were increased when SiO2 was incorporated into the film. The self-assembly TiO2-SiO2 thin film exhibited the enhanced photocatalytic decolorization of methylene blue (MB) dye. The advantages of SiO2 are; (1) to increase the adsorbability of the film and (2) to provide the hydroxyl radical to promote the photocatalytic reaction. The self-assembly thin film with the optimum molar ratio (SiO2:TiO2) as 20:80 gave the best performance for photocatalytic decolorization of MB dye with the overall efficiency of 81%.

  19. Direct fabrication of graphene on SiO2 enabled by thin film stress engineering

    PubMed Central

    McNerny, Daniel Q.; Viswanath, B.; Copic, Davor; Laye, Fabrice R.; Prohoda, Christophor; Brieland-Shoultz, Anna C.; Polsen, Erik S.; Dee, Nicholas T.; Veerasamy, Vijayen S.; Hart, A. John

    2014-01-01

    We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind. PMID:24854632

  20. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  1. Charging mechanism of electret film made of potassium-ion-doped SiO2

    NASA Astrophysics Data System (ADS)

    Hashiguchi, G.; Nakasone, D.; Sugiyama, T.; Ataka, M.; Toshiyoshi, H.

    2016-03-01

    A charging model is proposed for an electret film made of potassium-ion-doped SiO2 that can be formed between the two opposing micro-electrodes of a micro-electrostatic actuator, separated by a microscopic gap. On the basis of experimental evidence that charging only occurs in the positively biased electrode during the charging process and that the charging polarity is negative, we assumed that the cause of the electret charges is negatively charged oxygen ions residing in the SiO2 film, which arise as a consequence of potassium ion depletion. This assumption was supported by SIMS (Secondary Ion Mass Spectroscopy) analyses that indicate the presence of a depletion region of potassium ions near the interface of the silicon and the oxide film on the positively biased electrode. Calculations of the charged potential using Poisson's equation with the spatially distributed negative charges in the depletion region showed good agreement with the measured surface potential. It appears that our charging model can consistently elucidate potassium ion electret technology.

  2. Mixed films of TiO2-SiO2 deposited by double electron-beam coevaporation

    NASA Astrophysics Data System (ADS)

    Chen, Jyh-Shin; Chao, Shiuh; Kao, Jiann-Shiun; Niu, Huan; Chen, Chih-Hsin

    1996-01-01

    We used double electron-beam coevaporation to fabricate TiO2-SiO2 mixed films. The deposition process included oxygen partial pressure, substrate temperature, and deposition rate, all of which were real-time computer controlled. The optical properties of the mixed films varied from pure SiO2 to pure TiO2 as the composition of the films varied accordingly. X-ray diffraction showed that the mixed films all have amorphous structure with a SiO2 content of as low as 11%. Atomic force microscopy showed that the mixed film has a smoother surface than pure TiO2 film because of its amorphous structure. Linear and Bruggeman's effective medium approximation models fit the experimental data better than other models.

  3. Influence of adsorption kinetics on stress evolution in magnetron-sputtered SiO2 and SiNx films

    NASA Astrophysics Data System (ADS)

    Li, Jingping; Fang, Ming; He, Hongbo; Shao, Jianda; Li, Zhaoyang

    2013-07-01

    An in situ multi-beam optical sensor system was used to monitor and analyze the force per unit width (F/w) and stress evolution during several stages in magnetron-sputtered SiO2 and SiNx films. Stress was observed to relieve quickly after interrupt and recover rapidly after growth resumption in both films. Stress relief was reversible in SiO2 film but partial reversible in SiNx film. Stress relief results from both physical and chemical adsorption. Stress recovery is caused by physical desorption. And chemical adsorption results in an irreversible stress relief component. No chemical adsorption occurs in SiO2 film because of the stable chemical structure. The relationship between adsorption kinetics and films' mechanical behavior is revealed.

  4. Preparation and characterization of transparent hydrophilic photocatalytic TiO2/SiO2 thin films on polycarbonate.

    PubMed

    Fateh, Razan; Dillert, Ralf; Bahnemann, Detlef

    2013-03-19

    Transparent hydrophilic photocatalytic TiO2 coatings have been widely applied to endow the surfaces self-cleaning properties. A mixed metal oxide (TiO2/SiO2) can enhance the photocatalytic performance improving the ability of surface adsorption and increasing the amount of hydroxyl surface groups. The present work introduces a systematic study concerning the effect of the SiO2 addition to TiO2 films on the wettability, the photocatalytic activity, the adhesion strength, and the mechanical stability of the films. Transparent hydrophilic photocatalytic TiO2/SiO2 thin films were used to coat the polycarbonate (PC) substrate which was precoated by an intermediate SiO2 layer. The TiO2/SiO2 thin film was prepared employing a bulk TiO2 powder (Sachtleben Hombikat UV 100) and different molar ratios of tetraethoxysilane in acidic ethanol. A dip-coating process was used to deposit the films onto the polycarbonate substrate. The films were characterized by UV/vis spectrophotometry, FTIR spectroscopy, ellipsometry, BET, AFM, XRD, and water contact angle measurements. The mechanical stability and the UV resistance were examined. The photocatalytic activity of the coated surface was calculated from the kinetic analysis of methylene blue photodegradation measurements and compared with the photocatalytic activity of Pilkington Activ sheet glass. The coated surfaces displayed considerable photocatalytic activity and superhydrophilicity after exposure to UV light. The addition of SiO2 results in an improvement of the photocatalytic activity of the TiO2 film reaching the highest value at molar ratio TiO2/SiO2 equal to 1:0.9. The prepared films exhibit a good stability against UV(A) irradiation. PMID:23363048

  5. Structure of ultrathin crystalline SiO2 films on Mo(112)

    NASA Astrophysics Data System (ADS)

    Ricci, Davide; Pacchioni, Gianfranco

    2004-04-01

    The geometrical and electronic structures of a thin SiO2 film epitaxially grown on a Mo(112) substrate have been determined by first-principles density-functional theory calculations. β-cristobalite, β-tridymite, α-quartz, and β-quartz phases were considered. The film grows initially with an OH-terminated β-cristobalite structure which provides the strongest adhesion energy to the Mo substrate. High-temperature annealing results in a complete dehydroxylation and reconstruction of the top layer of the cristobalite film with the formation of two-membered silica rings. This accounts for a specific band at 795 cm-1 observed in the Fourier transform infra-red (FTIR) spectrum of the annealed epilayer.

  6. Preparation and characterization of amine-functionalized SiO 2/TiO 2 films for formaldehyde degradation

    NASA Astrophysics Data System (ADS)

    Photong, Somjate; Boonamnuayvitaya, Virote

    2009-09-01

    This paper investigated the gaseous formaldehyde degradation by the amine-functionalized SiO 2/TiO 2 photocatalytic films for improving indoor air quality. The films were synthesized via the co-condensation reaction of methyltrimethoxysilane (MTMOS) and 3-aminopropyltrimethoxysilane (APTMS). The physicochemical properties of prepared photocatalysts were characterized with N 2 adsorption/desorption isotherms measurement, X-ray diffraction (XRD) and Fourier Transform Infrared spectroscopy (FT/IR). The effect of amine-functional groups and the ratio of MTMOS/APTMS precursors on the formaldehyde adsorption and photocatalytic degradation were investigated. The results showed that the formaldehyde adsorption and photocatalytic degradation of the APTMS-functionalized SiO 2/TiO 2 film was higher than that of SiO 2/TiO 2 film due to the surface adsorption on amine sites and the relatively high of the specific surface area of the APTMS-functionalized SiO 2/TiO 2 film (˜15 times higher than SiO 2/TiO 2). The enhancement of the formaldehyde degradation of the film can be attributed to the synergetic effect of adsorption and subsequent photocatalytic decomposition. The repeatability of photocatalytic film was also tested and the degradation efficiency was 91.0% of initial efficiency after seven cycles.

  7. An Interfacial Europium Complex on SiO2 Nanoparticles: Reduction-Induced Blue Emission System

    NASA Astrophysics Data System (ADS)

    Ishii, Ayumi; Hasegawa, Miki

    2015-06-01

    In this study, Eu-coated SiO2 nanoparticles have been prepared, consisting of an interfacial complex of Eu and 1,10-phenanthroline (phen) at the solid surfaces of the SiO2/Eu nanostructures. The as-prepared SiO2/Eu/phen nanoparticles exhibits sharp red emission via energy transfer from the phen to the EuIII. After sintering at 200 °C in air, the emission is tuned from red to blue. The blue emission is originated from EuII. This reduction-induced emissive phenomenon resulted from the electron-donating environment created by the surrounding phen and SiO2, which is the first reported fabrication of a stable EuII-based emissive material using mild conditions (reaction in air and at low temperature) and an organic-inorganic hybrid nanostructure. The existence of two different stable oxidation states with characteristic emissions, blue emissive EuII and red emissive EuIII, suggests significant potential applications as novel luminescent materials with inorganic-organic hybrid structures.

  8. An Interfacial Europium Complex on SiO2 Nanoparticles: Reduction-Induced Blue Emission System

    PubMed Central

    Ishii, Ayumi; Hasegawa, Miki

    2015-01-01

    In this study, Eu-coated SiO2 nanoparticles have been prepared, consisting of an interfacial complex of Eu and 1,10-phenanthroline (phen) at the solid surfaces of the SiO2/Eu nanostructures. The as-prepared SiO2/Eu/phen nanoparticles exhibits sharp red emission via energy transfer from the phen to the EuIII. After sintering at 200 °C in air, the emission is tuned from red to blue. The blue emission is originated from EuII. This reduction-induced emissive phenomenon resulted from the electron-donating environment created by the surrounding phen and SiO2, which is the first reported fabrication of a stable EuII-based emissive material using mild conditions (reaction in air and at low temperature) and an organic-inorganic hybrid nanostructure. The existence of two different stable oxidation states with characteristic emissions, blue emissive EuII and red emissive EuIII, suggests significant potential applications as novel luminescent materials with inorganic-organic hybrid structures. PMID:26122318

  9. Electron-beam-induced formation mechanisms for Ti2O3-SiO2 composite nanofibers

    NASA Astrophysics Data System (ADS)

    Shin, Jae Won; Yang, Dae Jin; Lee, Seok-Hoon; Kim, Jin-Gyu; Yoo, Seung Jo; Yun, Dong Yeol; Lee, Dea Uk; Kim, Tae Whan

    2014-09-01

    Anatase TiO2 nanoparticles with high crystallinity were embedded in the SiO2 matrix by electrospining and calcining. As-calcined TiO2-SiO2 nanofibers were transformed into Ti2O3-SiO2 nanofibers owing to in situ electron-beam irradiation in a transmission electron microscope. The microstructural properties and the mechanisms of electron-beam-induced formation of Ti2O3-SiO2 composite nanofibers were described on the basis of the obtained high-resolution transmission electron microscopy images, fast-Fourier-transformed patterns, and energy dispersive spectroscopy profiles.

  10. Amorphous SnO2-SiO2 thin films with reticular porous morphology for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Chen, L. B.; Li, C. C.; Wang, T. H.

    2008-12-01

    Amorphous SnO2-SiO2 thin films with reticular porous morphology were fabricated by electrostatic spray deposition method for lithium-ion batteries. An initial discharge capacity of the SnO2-SiO2 electrodes with 15% of SiO2 was about 1271 mA h/g, and the reversible capacity stayed in the range of 869-501 mA h/g during the successive 100 cycles, but only 1141 and 694-174 mA h/g for the pure SnO2 electrodes. The high capacity was attributed to the addition of SiO2, which facilitated the formation of the Li-Sn alloy. The improved cycle performance was due to reticular porous structure, which accommodated the volume change during cycling.

  11. Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate

    PubMed Central

    2011-01-01

    Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V. PMID:22112251

  12. Photosensitive GeO2-SiO2 films for ultraviolet laser writing of channel waveguides and bragg gratings with Cr-loaded waveguide structure.

    PubMed

    Takahashi, Masahide; Sakoh, Akifumi; Ichii, Kentaro; Tokuda, Yomei; Yoko, Toshinobu; Nishii, Junji

    2003-08-01

    Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2-70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 x 10(-3) and 0.28 x 10(-3), respectively. These results clearly indicate that the photorefractivity of GeO2-SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge(2+)-enriched GeOs-SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure. PMID:12916627

  13. Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

    NASA Astrophysics Data System (ADS)

    Franta, Daniel; Nečas, David; Ohlídal, Ivan; Giglia, Angelo

    2016-04-01

    Vacuum evaporated SiO2 thin films are very important in a design and manufacturing of optical devices produced in optics industry. In this contribution a reliable and precise optical characterization of such SiO2 thin films is performed using the combined method of spectrophotometry at normal incidence and variable-angle spectroscopic ellipsometry applied over spectral range from far IR to extreme UV (0.01-45 eV). This method uses the Universal Dispersion Model based on parametrization of the joint density of states and structural model comprising film defects such as nanometric boundary roughness, inhomogeneity and area non-uniformity. The optical characterization over the wide spectral range provides not only the spectral dependencies of the optical constants of the films within the wide range but, more significantly, it enables their correct and precise determination within the spectral range of interest, i.e. the range of their transparency. Furthermore, measurements in the ranges of film absorption, i. e. phonon excitations in IR and electron excitations in UV, reveal information about the material structure. The results of the optical characterization of the SiO2 thin films prepared on silicon single crystal substrates under various technological conditions are presented in detail for two selected samples. Beside film thicknesses and values of dispersion parameters and spectral dependencies of the optical constants of the SiO2 films, the characterization also enables quantification of film defects and their parameters are presented as well. The results concerning the optical constants of SiO2 films are compared with silica optical constants determined in our earlier studies.

  14. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    NASA Astrophysics Data System (ADS)

    Chen, Le; Wang, Qing-Kang; Shen, Xiang-Qian; Chen, Wen; Huang, Kun; Liu, Dai-Ming

    2015-10-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation; finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm-800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances. Project supported by the National High-Tech Research and Development Program of China (Grant No. 2011AA050518), the University Research Program of Guangxi Education Department, China (Grant No. LX2014288), and the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2013GXNSBA019014).

  15. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Barranco, A.; Cotrino, J.; Yubero, F.; Espinós, J. P.; González-Elipe, A. R.

    2004-07-01

    Silicon dioxide thin films with variable and controlled porosity have been prepared at room temperature by plasma enhanced chemical vapor deposition in an electron cyclotron resonance microwave reactor with a downstream configuration. The procedure consists of the deposition of successive cycles consisting of a sacrificial organic-polymeric layer and, afterward, a silicon dioxide layer. Toluene and oxygen are used as precursors of the organic layers and Si(CH3)3Cl and oxygen for the SiO2. During deposition of the latter, the organic layer is simultaneously burned off. In these conditions, the release of gases produced by oxidation of the organic-polymeric layer take place while the oxide layer is being deposited. Thus, modification of the nucleation and growing mechanism of the silicon oxide thin film take place. The porosity of the final porous SiO2 thin films increases with the thickness of the sacrificial organic layer. The porous SiO2 films prepared with the aforementioned method are free of carbon and chlorine contamination as confirmed by Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. Depending on their porosity, the SiO2 thin films are either transparent or scattered visible light. The former have refractive index lower than that of thermal silicon dioxide and the latter show membranelike behavior in gas diffusion experiments. All the samples have good adhesion to the substrates used for the deposition, either polished Si wafer, glass plates, or standard porous supports. They have columnar microstructure, as determined by scanning electron microscopy. A preliminary ultraviolet-visible characterization of the optically transparent thin films reveals that transmission of light through glass increases by 7%-8% when the porous silica is deposited on this substrate. These films prove to be very efficient as antireflective coatings and are of interest for photovoltaic and similar applications

  16. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

    DOE PAGESBeta

    Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; Smith, Chris; Jensen, Lars; Guenster, Stefan; Maedebach, Heinrich; Ristau, Detlev

    2016-07-15

    Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similarmore » to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.« less

  17. Nuclear-magnetic-resonance characterization of doped SiO2 films used in integrated circuits

    NASA Astrophysics Data System (ADS)

    Schilling, Frederic C.; Steiner, Kurt G.; Obeng, Yaw S.

    1995-07-01

    Phosphorus-doped silicon dioxide dielectric films, prepared by plasma-enhanced chemical-vapor deposition at low temperature (400 °C), play a critical role in the reliability of very large scale integration devices. The phosphorus in the phosphosilicate glass (PSG) neutralizes the effect of mobile ion species and improves the glass flow, resulting in better gap filling and improved planarization. To extract the maximum contribution from this and other doped films (boron and germanium doped) in advanced sub-0.5 μm complimentary metal-oxide-semiconductor technologies, it is necessary to understand dopant incorporation and the effects of variation in the exposure to water, dopant concentration, and high-temperature annealing. An analysis of PSG by 1H, 29Si, and 31P solid-state nuclear magnetic resonance establishes the chemistry of the phosphorus dopant incorporation and the effect of moisture on the glass structures. Exposure to water results in a depolymerization of the PSG structures and a concurrent decrease in the crosslink density of the glass network. Similar concentrations of silanols are observed in both doped and undoped samples of SiO2. An increase in silanol concentration is found in P-doped glass after exposure to moisture in air. The level of exposure to water will determine the extent of structural changes in the dielectric film. Variations in this exposure can be expected to produce variability in the glass flow and other properties of the dielectric.

  18. Nuclear-magnetic-resonance characterization of doped SiO2 films used in integrated circuits

    NASA Astrophysics Data System (ADS)

    Schilling, Frederic C.; Steiner, Kurt G.; Obeng, Yaw S.

    1995-09-01

    Phosphorus-doped silicon dioxide dielectric films, prepared by plasma-enhanced chemical-vapor deposition at low temperature (400 °C), play a critical role in the reliability of very large scale integration devices. The phosphorus in the phosphosilicate glass (PSG) neutralizes the effect of mobile ion species and improves the glass flow, resulting in better gap filling and improved planarization. To extract the maximum contribution from this and other doped films (boron and germanium doped) in advanced sub-0.5 μm complimentary metal-oxide-semiconductor technologies, it is necessary to understand dopant incorporation and the effects of variation in the exposure to water, dopant concentration, and high-temperature annealing. An analysis of PSG by 1H, 29Si, and 31P solid-state nuclear magnetic resonance establishes the chemistry of the phosphorus dopant incorporation and the effect of moisture on the glass structures. Exposure to water results in a depolymerization of the PSG structures and a concurrent decrease in the crosslink density of the glass network. Similar concentrations of silanols are observed in both doped and undoped samples of SiO2. An increase in silanol concentration is found in P-doped glass after exposure to moisture in air. The level of exposure to water will determine the extent of structural changes in the dielectric film. Variations in this exposure can be expected to produce variability in the glass flow and other properties of the dielectric.

  19. Solution-processed crack-free oxide films formed using SiO2 nanoparticles and organoalkoxysiloxane precursors

    NASA Astrophysics Data System (ADS)

    Na, Moonkyong; Rhee, Shi-Woo

    2015-07-01

    Crack-free uniform oxide films were deposited by spin-on-glass method using a mixture solution of organoalkoxysiloxane network former and SiO2 nanoparticles. In the range of molar ratio of SiO2 nanoparticles to oragnoalkoxysiloxanes between 0.6:1 and 1:1, stable sols were formed and smooth and uniform oxide films could be obtained. Fourier-transform infrared (FT-IR) spectroscopy was used to investigate the chemical properties of the films, and we found that Sisbnd Osbnd Si structures were effectively formed via condensation reactions during curing at 150 °C. The effect of three different organic side groups in the organoalkoxsiloxane on the film properties was investigated. Precursors containing methyl groups effectively formed Sisbnd Osbnd Si network with SiO2 nanoparticles, which was confirmed by the increased intensity of the Sisbnd O asymmetric stretching mode at 1080 cm-1 in the FT-IR spectra. Smooth and continuous films were obtained using precursors containing methyl and phenyl groups, with root-mean-square surface roughness of 1.05 nm (methyl precursor) and 1.16 nm (phenyl precursor). The shrinkage of the oxide film formed with phenyl groups was less than 1%. The dielectric properties of the oxide films were characterized, and we observed leakage currents in the range of 10-9 to 10-8 A/cm2 just prior to the dielectric breakdown with the films formed using precursors containing methyl and phenyl groups

  20. Preparation and characterization of SiO2/TiO2/methylcellulose hybrid thick films for optical waveguides

    NASA Astrophysics Data System (ADS)

    Yang, Jun; Zhang, Xinyu; Wang, Pei; Ming, Hai; Wu, Yunxia; Xie, Jianping; Zhang, Junying

    2005-07-01

    SiO2/TiO2/methylcellulose composite materials processed by the sol-gel technique were studied for optical waveguide applications. With the help of methylcellulose, an organic binder, SiO2/TiO2/methylcellulose hybrid thick films were prepared by a single spin-coating processes. After annealing at 70 Celsius degree for an hour, 2.5-?m crack-free and dense organic--inorganic hybrid optical films with a refractive index of 1.537 were achieved. Optical losses of plane waveguide made up of those films and ordinary slide glass substrate are around 0.3 dB/cm at 650 nm. Scanning electronmicroscopy (SEM) and UV-visible spectroscopy (UV-VIS), have been used to characterize the thick films.

  1. Unconventional magnetization of Fe3O4 thin film grown on amorphous SiO2 substrate

    NASA Astrophysics Data System (ADS)

    Yin, Jia-Xin; Liu, Zhi-Guo; Wu, Shang-Fei; Wang, Wen-Hong; Kong, Wan-Dong; Richard, Pierre; Yan, Lei; Ding, Hong

    2016-06-01

    High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings highlight the unusual magnetization of Fe3O4 thin film grown on the amorphous SiO2 substrate.

  2. Desorption induced by electronic transitions of Na from SiO2: relevance to tenuous planetary atmospheres.

    NASA Astrophysics Data System (ADS)

    Yakshinskiy, B. V.; Madey, T. E.

    2000-04-01

    The authors have studied the desorption induced by electronic transitions (DIET) of Na adsorbed on model mineral surfaces, i.e. amorphous, stoichiometric SiO2 films. They find that electron stimulated desorption (ESD) of atomic Na occurs for electron energy thresholds as low as ≡4 eV, that desorption cross-sections are high (≡1×10-19cm2 at 11 eV), and that desorbing atoms are 'hot', with suprathermal velocities. The estimated Na desorption rate from the lunar surface via ESD by solar wind electrons is a small fraction of the rate needed to sustain the Na atmosphere. However, the solar photon flux at energies ≥5 eV exceeds the solar wind electron flux by orders of magnitude; there are sufficient ultraviolet photons incident on the lunar surface to contribute substantially to the lunar Na atmosphere via PSD of Na from the surface.

  3. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    NASA Astrophysics Data System (ADS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-12-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ˜8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

  4. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.

    PubMed

    Zhu, Li Qiang; Sun, Jia; Wu, Guo Dong; Zhang, Hong Liang; Wan, Qing

    2013-03-01

    Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications. PMID:23364424

  5. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

    NASA Astrophysics Data System (ADS)

    Zhu, Li Qiang; Sun, Jia; Wu, Guo Dong; Zhang, Hong Liang; Wan, Qing

    2013-02-01

    Phosphorus (P)-doped nanogranular SiO2 films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10-4 S cm-1 is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO2/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >107. Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO2 shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

  6. Nanostructured Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel thin films for integrated optics

    NASA Astrophysics Data System (ADS)

    Predoana, Luminita; Preda, Silviu; Anastasescu, Mihai; Stoica, Mihai; Voicescu, Mariana; Munteanu, Cornel; Tomescu, Roxana; Cristea, Dana

    2015-08-01

    The nanostructured multilayer silica-titania or silica-titania-alumina films doped with Er3+ were prepared by sol-gel method. The sol-gel method is a flexible and convenient way to prepare oxide films on several types of substrates, and for this reason it was extensively investigated for optical waveguides fabrication. The selected molar composition was 90%SiO2-10%TiO2 or 85%SiO2-10%TiO2-5% Al2O3 and 0.5% Er2O3. The films were characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), Spectroellipsometry (SE), as well as by Atomic Force Microscopy (AFM) and photoluminescence (PL). The films deposited on Si/SiO2 substrate by dip-coating or spin-coating, followed by annealing at 900 °C, presented homogenous and continuous surface and good adherence to the substrate. Differences were noticed in the structure and properties of the prepared films, depending on the composition and the number of deposited layers. Channel optical waveguides were obtained by patterning Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel layers deposited on oxidized silicon wafers.

  7. High-Sensitivity Infrared Characterization of Ultrathin SiO2 Film by Grazing Internal Reflection Method

    NASA Astrophysics Data System (ADS)

    Matsui, Yuichi; Miyagawa, Yasuo; Izumitani, Junko; Okuyama, Masanori; Hamakawa, Yoshihiro

    1992-02-01

    A new kind of high-sensitivity infrared spectroscopy for characterizing SiO2 ultrathin film of 2-10 nm thickness of metal-SiO2-Si structure has been developed by the grazing internal reflection (GIR) method. At a large incident angle of 80 degrees onto the metal-SiO2-Si interface having SiO2 film of 2 nm thickness, a very large absorption of about 90% has been obtained at around 1240 cm-1 corresponding to the Si-O-Si bond. The measured data including the incident angle dependence agree well with the calculated values analyzed by Fresnel’s formula. Moreover, slight absorptions of Si-H and Si-OH have easily been measured as a strong signal change of about 1-7%.

  8. Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement

    NASA Astrophysics Data System (ADS)

    Naitou, Yuichi

    2012-11-01

    Tip-induced deformation of graphene on a SiO2 substrate was probed through a combination of scanning capacitance microscopy (SCM) and dynamic force microscopy (DFM). Spectroscopic analysis revealed that the resonant frequency shift (Δf) of the probe tip oscillation and the modulated capacitance (ΔC) simultaneously measured on graphene depend on the externally applied bias voltage while keeping the tip-sample distance constant. This finding is interpreted as a result of a local displacement of the graphene surface caused by the electrostatic force between the probe tip and graphene. The approach curve of the SCM tip toward graphene can be used to calibrate the observed ΔC spectra, quantitatively yielding an average deformation of approximately 0.31 nm in trilayer graphene and 0.21 nm in single-layer graphene.

  9. Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

    NASA Astrophysics Data System (ADS)

    Seguini, G.; Llamoja Curi, J.; Spiga, S.; Tallarida, G.; Wiemer, C.; Perego, M.

    2014-12-01

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 1012 Au NPs cm-2 were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 1011 Au NPs cm-2. The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  10. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

    NASA Astrophysics Data System (ADS)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Álvarez, R.; Gil-Rostra, J.; González, J. C.; Cotrino, J.; Gonzalez-Elipe, A. R.; Palmero, A.

    2012-03-01

    Growth of amorphous SiO2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O- ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  11. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  12. Well-organized meso-macroporous TiO2/SiO2 film derived from amphiphilic rubbery comb copolymer.

    PubMed

    Jeon, Harim; Lee, Chang Soo; Patel, Rajkumar; Kim, Jong Hak

    2015-04-15

    We report the facile synthesis of a well-organized meso-macroporous TiO2/SiO2 thin film with high porosity and good interconnectivity from a binary mixture (i.e., titania precursor and polymer template). Our process is based on self-assembly of the amphiphilic rubbery comb copolymer, poly(dimethylsiloxane)-g-poly(oxyethylene methacrylate) (PDMS-g-POEM) with titanium tetraisopropoxide (TTIP). SiO2 is self-provided by thermal oxidation of PDMS chains during calcination under air. The selective, preferential interaction between TTIP and the hydrophilic POEM chains was responsible for the formation of well-organized TiO2/SiO2 films, as supported by transmission electron microscopy, scanning electron microscopy, X-ray photospectroscopy, and X-ray diffraction analyses. We investigated in detail the effect of precursor content, solvent type, and polymer concentration on thin film morphology. Photodegradation of methyl orange by the well-organized meso-macroporous TiO2/SiO2 film was greater than that of a dense TiO2 film prepared without PDMS-g-POEM as well as a SiO2-etched TiO2 film. These results indicate that the well-organized structure and SiO2 doping of the TiO2 film play a pivotal role in enhancing its photocatalytic properties. PMID:25805232

  13. Carrier and heat transport properties of polycrystalline GeSn films on SiO2

    NASA Astrophysics Data System (ADS)

    Uchida, Noriyuki; Maeda, Tatsuro; Lieten, Ruben R.; Okajima, Shingo; Ohishi, Yuji; Takase, Ryohei; Ishimaru, Manabu; Locquet, Jean-Pierre

    2015-12-01

    We evaluated the potential of polycrystalline (poly-) GeSn as channel material for the fabrication of thin film transistors (TFTs) at a low thermal budget (<600 °C). Poly-GeSn films with a grain size of ˜50 nm showed a carrier mobility of ˜30 cm2 V-1 s-1 after low-temperature annealing at 475-500 °C. Not only carrier mobility but also thermal conductivity of the films is important in assessing the self-heating effect of the poly-GeSn channel TFT. The thermal conductivity of the poly-GeSn films is 5-9 W m-1 K-1, which is significantly lower compared with 30-60 W m-1 K-1 of bulk Ge; this difference results from phonon scattering at grain boundaries and Sn interstitials. The poly-GeSn films have higher carrier mobility and thermal conductivity than poly-Ge films annealed at 600 °C, because of the improved crystal quality and coarsened grain size resulting from Sn-induced crystallization. Therefore, the poly-GeSn film is well-suited as channel material for TFTs, fabricated with a low thermal budget.

  14. Design of high-performance memristor cell using W-implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Li, Wenqing; Liu, Xinqiang; Wang, Yongqiang; Dai, Zhigao; Wu, Wei; Cheng, Li; Zhang, Yupeng; Liu, Qi; Xiao, Xiangheng; Jiang, Changzhong

    2016-04-01

    Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to ˜106). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO2-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications.

  15. Synthesis of mesoporous TiO2/SiO2 hybrid films as an efficient photocatalyst by polymeric micelle assembly.

    PubMed

    Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Hwang, Soo Min; Sun, Ziqi; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke

    2014-05-12

    Thermally stable mesoporous TiO2/SiO2 hybrid films with pore size of 50 nm have been synthesized by adopting the polymeric micelle-assembly method. A triblock copolymer, poly(styrene-b-2-vinyl pyridine-b-ethylene oxide), which serves as a template for the mesopores, was utilized to form polymeric micelles. The effective interaction of titanium tetraisopropoxide (TTIP) and tetraethyl orthosilicate (TEOS) with the polymeric micelles enabled us to fabricate stable mesoporous films. By changing the molar ratio of TEOS and TTIP, several mesoporous TiO2/SiO2 hybrid films with different compositions can be synthesized. The presence of amorphous SiO2 phase effectively retards the growth of anatase TiO2 crystal in the pore walls and retains the original mesoporous structure, even at higher temperature (650 °C). These TiO2/SiO2 hybrid films are of very high quality, without any cracks or voids. The addition of SiO2 phase to mesoporous TiO2 films not only adsorbs more organic dyes, but also significantly enhances the photocatalytic activity compared to mesoporous pure TiO2 film without SiO2 phase. PMID:24710980

  16. Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory

    NASA Astrophysics Data System (ADS)

    Ryu, Seung Wook; Oh, Jin Ho; Lee, Jong Ho; Choi, Byung Joon; Kim, Won; Hong, Suk Kyoung; Hwang, Cheol Seong; Kim, Hyeong Joon

    2008-04-01

    The improvement in the phase change characteristics of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with SiO2 using cosputtering at room temperature. As the sputtering power of SiO2 increased from 0to150W, the activation energy for crystallization increased from 2.1±0.2to3.1±0.15eV. SiO2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of SiO2, which reduced the power consumption as well as the reset current.

  17. Optical, Structural and Electrochemical Properties of CeO2--Al2O3--SiO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Saygin Hinczewski, Dursen; Hinczewski, Michael; Sorar, Idris; Pehlivan, Esat; Tepehan, Fatma Z.; Tepehan, Galip G.

    2008-03-01

    CeO2 thin films can be used as counter-electrodes in electrochromic devices, but have the disadvantage of slow reaction kinetics. Thus research has shifted to composite CeO2 films as more promising ion-storage candidates. In this work, we examine the sol-gel coating and characterization of CeO2--Al2O3--SiO2 transparent thin films deposited onto glass microslides and indium-tin-oxide-coated conducting glass. We investigate the evolution of the surface morphology, and the optical, structural and electrochemical properties of the films with varying Si-Al-Ce mol ratios. In particular we find the formation of novel complex phase-segregated structures at the surface, which have the potential for enhancing Li ion insertion/extraction.

  18. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    DOE PAGESBeta

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Gunster, S.; Madebach, H.

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2more » film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  19. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-films pairs

    DOE PAGESBeta

    Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Ristau, D.; Gunster, S.; Madebach, H.

    2015-11-23

    Here, the role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layermore » HfO2 film. Absorption in both types of films was measured using laser calorimetry and Photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  20. State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2 Films in a Metal-Oxide-Silicon Structure

    NASA Astrophysics Data System (ADS)

    Ishida, Takeshi; Tega, Naoki; Mori, Yuki; Miki, Hiroshi; Mine, Toshiyuki; Kume, Hitoshi; Torii, Kazuyoshi; Yamada, Ren-ichi; Shiraishi, Kenji

    2013-11-01

    Dynamic fluctuation in stress-induced leakage current - called “variable stress-induced leakage current” - in a gate oxide of a metal-oxide-semiconductor structure was investigated. Variable stress-induced leakage current is attributed to random telegraph noise, which is associated with the state-transition of a single defect. To analyze the mechanism of the state-transition, dependence of state-transition probabilities on gate current and on temperature were investigated. These dependences indicate that the state-transition mechanism is a defect-structure transition by charge collision.

  1. Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect

    NASA Astrophysics Data System (ADS)

    Bansal, Namrata; Koirala, Nikesh; Brahlek, Matthew; Han, Myung-Geun; Zhu, Yimei; Cao, Yue; Waugh, Justin; Dessau, Daniel S.; Oh, Seongshik

    2014-06-01

    The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental effects originating from the substrates. Here, we report the observation of a well-defined TSS on Bi2Se3 films grown on amorphous SiO2 (a-SiO2) substrates and a large gating effect on these films using the underneath doped-Si substrate as the back gate. The films on a-SiO2 were composed of c-axis ordered but random in-plane domains. However, despite the in-plane randomness induced by the amorphous substrate, the transport properties of these films were superior to those of similar films grown on single-crystalline Si(111) substrates, which are structurally better matched but chemically reactive with the films. This work sheds light on the importance of chemical compatibility, compared to lattice matching, for the growth of TI thin films, and also demonstrates that the technologically important and gatable a-SiO2/Si substrate is a promising platform for TI films.

  2. An influence of technological parameters of plasma-chemical deposition of SiO2 films on their electro-physical properties

    NASA Astrophysics Data System (ADS)

    Romanov, A. A.; Serkov, A. V.; Hruleva, E. S.

    2016-07-01

    In this article a formation process of dielectric films on silicon (100) and silicon carbide using plasma-chemical deposition is described. Experimental relationships of SiO2 films thickness and main technological parameters are presented. Values of electro-physical parameters of films are measured.

  3. Magnetic-field-induced photocurrent in metal-dielectric-semiconductor heterostructures based on cobalt nanoparticles SiO2(Co)/GaAs

    NASA Astrophysics Data System (ADS)

    Pavlov, V. V.; Lutsev, L. V.; Usachev, P. A.; Astretsov, A. A.; Stognij, A. I.; Novitskii, N. N.; Pisarev, R. V.

    2016-02-01

    Magnetic-field influence on photocurrent in heterostructures of silicon dioxide films with cobalt nanoparticles SiO2(Co) grown on gallium arsenide GaAs substrate has been studied in the avalanche regime at room temperature. High values of magnetic-field-induced photocurrent were found in the vicinity and above the GaAs bandgap of ∼1.4 eV. For photon energies E > 1.4 eV the photocurrent significantly increases, while the avalanche process is suppressed by the magnetic field, and the current flowing through the heterostructure decreases. The photocurrent is enhanced in the SiO2(Co 60 at%)/GaAs heterostructure at the magnetic field H=1.65 kOe by factor of about 10 for the photon energy E=1.5 eV. This phenomenon is explained by a model based on electronic transitions in magnetic fields with the spin-dependent recombination process at deep impurity centers in the SiO2(Co)/GaAs interface region.

  4. Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers

    NASA Astrophysics Data System (ADS)

    Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng

    2016-03-01

    We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge1-xSnx thin films (0.074 < x < 0.085) crystallized on amorphous SiO2 towards 3D photonic integration. Due to a much smaller Poisson's ratio for (111) vs. (100) orientation, 0.44% thermally induced biaxial tensile strain reduces the direct-gap by 0.125 eV towards enhanced direct-gap semiconductor properties, twice as effective as the tensile strain in Ge(100) films. Correspondingly, the optical response is extended to λ = 2.8 μm. A dilatational deformation potential of a = -12.8 ± 0.8 eV is derived. These GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.

  5. The formation of nano-size SiO2 thin film on an aluminum plate with hexamethyldisilazane (HMDSA) and hexamethyldisiloxane (HMDSO)

    NASA Astrophysics Data System (ADS)

    Ma, H. K.; Zhao, E.; Yeh, C. L.; Chung, K. M.

    2003-02-01

    This study is using HMDSA (C6H19NSi2) or HMDSO (C6H18OSi2) vapor into C3H8/air premixed flames to form SiO2 thin film on the surface of an aluminum plate. With the addition of HMDSO or HMDSA to premixed flames, an orange secondary flame or a flame brush appeared and was contributed to the formation of SiO2 particles. Based upon the EDS, XPS and FTIR analysis, it is believed that the synthesized products consist of mainly SiO2 and a small amount of SiO. The pure SiO2 crystal structure, was proved by XRD analysis, which may form from the SiO2 amorphous structure after high temperature (1300°C) thermal treatment. The nano-size SiO2 particles, which ranged from 2.5-25 nm, are proved by analysis of the BET and TEM. A 2-D CFD-RC code with 12 reduced chemical reaction mechanism, based upon the SIMPLER procedure, was successfully employed to predict the flame temperature and both of the SiO2 and SiO concentration profiles. Compared with the experimental results, the calculated temperature profiles in the post-flame region are in good agreement with the measured data and observation phenomena.

  6. The effect of SiO2 on TiO2 up-conversion photoluminescence film

    NASA Astrophysics Data System (ADS)

    Meng, Xiaoqi; Li, Lianqiang; Zou, Kaishun; Liu, Juncheng

    2014-11-01

    In order to increase the photoelectric conversion efficiency of silicon solar cell, the up-conversion film has been tried to enhance the response of the solar cells to the infrared band. Yb3+, Er3+ co-doped SiO2/TiO2 composite films with different Ti/Si molar ratio were deposited on the glass substrate with sol-gel method and spin-coating technique. The effect of different molar ratio of Ti/Si on the film's morphology and optical properties was investigated. The morphology, the absorption spectra and photoluminescence (PL) spectra of the film were tested and analyzed. After the film was annealed at 900 °C, the XRD diffraction pattern indicated that rare earths ions have evenly dispersed into the matrix lattice. The FT-IR showed that Si ions entered into the lattice of titanium dioxide, and the Ti-O-Si bonds came into being. When the film pumped with a laser of 980 nm, there were a dominant red emission and several weak green peaks. In addition, with the increase of the mole ratio of Si/Ti, the intensity of the film's up-conversion luminescence increases at first and then decreases. When the molar ratio of Si/Ti is 1/8, the sample had the highest intensity of up-conversion luminescence.

  7. Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method

    NASA Astrophysics Data System (ADS)

    Yeh, Ching-Fa; Lin, Shyue-Shyh

    1995-09-01

    To develop a low-stress thin film for micromachined devices, a novel liquid-phase deposition (LPD) SiO2 - xFx technique utilizing silica-saturated H2SiF6 solution with H2O addition only is proposed. Due to extremely low-temperature processing and fluorine incorporation, the stress of the LPD SiO2 - xFx film can be less than 100 MPa. In this paper, we found that the deposition parameter of H2O addition has much efect on the stress of as-deposited LPD oxide. The stress variations with thermal cycling has also been clarified. We found that the LPD SiO2 - xFx film will be a good candidate as low-stress film for micromachined devices.

  8. The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

    NASA Astrophysics Data System (ADS)

    Ryu, Seung Wook; Lee, Jong Ho; Ahn, Young Bae; Kim, Choon Hwan; Yang, Bong Seob; Kim, Gun Hwan; Kim, Soo Gil; Lee, Se-Ho; Hwang, Cheol Seong; Kim, Hyeong Joon

    2009-09-01

    This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2Sb2Te5 (SGST) films for phase change random access memory applications. The VT of the SGST films increased from ˜0.9 V (for GST) to ˜1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ˜37% and the electrical resistivity increased by ˜19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.

  9. Effect of carbon enrichment induced by photoresist on highly selective SiO2 etching

    NASA Astrophysics Data System (ADS)

    Chu, Changwoong; Chi, Kyeong-Koo; Moon, Joo-Tae

    2002-11-01

    We propose two models to discuss the behavior of the selective etching of SiO2 to the underlying Si3N4 with changing wafer surface temperatures. For this investigation, three specimens, SiO2, Si3N4, and poly-Si, which are nonpatterned, photoresist-patterned, and poly-silicon-patterned, respectively, have been etched in a surface wave plasma system equipped with an electrostatic chuck for wafer temperature control. The coolant temperature, which controls the wafer temperature, has been changed from -20 to 50 °C. For the nonpatterned wafer, the etch rates of SiO2, Si3N4, and poly-Si increase and the selectivities decreases with wafer temperature. However, for the samples patterned with either photoresist or poly-Si, the etch rates of SiO2 decrease with wafer temperature. The temperature rise also leads to an enhancement of selectivity of SiO2/Si3N4, and the steeper profile angles. The presence of a masking layer, even for the poly-Si-patterned samples, results in a different etching behavior. This is because the sticking probability of the polymer precursor becomes smaller on the sidewall of the profile with the temperature increase. Therefore the thickness of polymer on the sidewall of the contact hole decreases, and the thickness of polymer on the bottom increases as the wafer temperature goes up. Comparing photoresist-patterned samples with poly-Si-patterned ones, we can corroborate the role of the photoresist mask layer, which provides a higher carbon-to-fluorine ratio at the near surface. The carbon enrichment accelerates more steeply the etch rate decrement of the substrate layer. In summary, there are two main contributions attributed by the substrate temperature: changing the sticking coefficient of the fluorocarbon precursor and enhancing the photoresist erosion.

  10. Sol-gel preparation and characterization of SiO2 coated VO2 films with enhanced transmittance and high thermochromic performance

    NASA Astrophysics Data System (ADS)

    Li, Dezeng; Shan, Yongkui; Huang, Fuqiang; Ding, Shangjun

    2014-10-01

    Vanadium dioxide (VO2) films prepared at low-temperature with a low cost are considerable for energy-saving applications. Here, SiO2 coated VO2 films with clearly enhanced visible transmittance by introducing antireflection coatings (ARCs) and excellent thermochromic performance were present. The VO2 films have been prepared via a stable and low-cost sol-gel synthesis route using vanadium pentaoxide powder as precursor, and their structural, morphological, optical and electrical properties and thermochromic performance were systemically characterized. The resistance of VO2 films varies by 4 orders of magnitude and the transmittance changes from 11.8% to 69.3% at 2500 nm while no significant deviation appears in the visible region during metal-insulator transition (MIT). Nanoporous SiO2 coating with good optical transparency was coated on the surface of VO2 film via sol-gel dip-coating technique to enhance its optical transmittance, and the visible transmittance is increased by 14.6% due to the significantly decreased reflectance. The critical transition temperature (63 °C) and infrared switching properties of VO2 films are not much deteriorated by applying SiO2 layer. The synergistic effect of antireflection and thermochromism on SiO2 coated VO2 films was investigated.

  11. Luminescence of Eu(3+) doped SiO2 Thin Films and Glass Prepared by Sol-gel Technology

    NASA Technical Reports Server (NTRS)

    Castro, Lymari; Jia, Weiyi; Wang, Yanyun; Santiago, Miguel; Liu, Huimin

    1998-01-01

    Trivalent europium ions are an important luminophore for lighting and display. The emission of (5)D0 to (7)F2 transition exhibits a red color at about 610 nm, which is very attractive and fulfills the requirement for most red-emitting phosphors including lamp and cathode ray phosphorescence materials. Various EU(3+) doped phosphors have been developed, and luminescence properties have been extensively studied. On the other hand, sol-gel technology has been well developed by chemists. In recent years, applications of this technology to optical materials have drawn a great attention. Sol-gel technology provides a unique way to obtain homogeneous composition distribution and uniform doping, and the processing temperature can be very low. In this work, EU(3+) doped SiO2 thin films and glasses were prepared by sol-gel technology and their spectroscopic properties were investigated.

  12. Frequency-dependence of the switching voltage in electronic switching of Pt-dispersed SiO2 thin films

    NASA Astrophysics Data System (ADS)

    Choi, Byung Joon; Chen, I.-Wei

    2016-06-01

    The switching time-voltage dependence of electronic resistive switching was studied for understanding the switching dynamics in Pt-dispersed SiO2 thin film devices. Trapezoidal voltage pulses with opposite polarities were consecutively introduced and thereby transient on-switching and offswitching were examined. A prior on-switching voltage determines the off-switching voltage regardless of the sweeping rate of the pulse for the prior on-switching. However, the off-switching voltage was sensitive to the sweeping rate of the subsequent pulses for off-switching. The frequencydependent impedance of both the device and the surrounding circuit element are thought to result in the variation of the off-switching voltage; otherwise, the switching voltage is independent of time.

  13. Effects of applying bias voltage on metal-coated pentacene films on SiO2 studied by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Hirosawa, Ichiro; Watanabe, Takeshi; Oji, Hiroshi; Yasuno, Satoshi; Koganezawa, Tomoyuki; Tada, Keisuke; Yoshimoto, Noriyuki

    2016-03-01

    The effects of bias voltage application on C 1s photoelectron kinetic energies in Au- and Ag-coated pentacene films on SiO2 were studied by hard X-ray photoelectron spectroscopy. It was observed that the kinetic energies of C 1s were smaller in shallow regions in contact with metals than in mid regions of the pentacene films. The differences in C 1s kinetic energy between the shallow and mid regions of the Ag-coated pentacene films were slightly larger than those of the Au-coated films. The differences in the kinetic energies were decreased by applying negative voltages. The larger effect of voltage application was observed in the Ag-coated film than in the Au-coated film. In addition, partially reduced Si atoms in SiO2 were found at the interface to the pentacene film.

  14. SiO2 Film Grown On Glass In Aqueous Solution

    NASA Astrophysics Data System (ADS)

    Kawahara, Hideo; Goda, Takuji; Nagayama, Hirotsugu; Honda, Hisao; Hishinuma, Akihiro

    1989-12-01

    Si02 film deposition on a glass was made by LPD method (Liquid Phase Deposition). This process involes the deposition and growth of Si02 layer on glass surface while immersing it in hexafluorosilicic acid (H2SiF6) solution supersaturated with silica. In this study, the influence of the impurities and H2SiF6 concentration in the solution on Si02 film properties was investigated by use of SIMS, ICP, Ellipsometry,IRRS and etch rate measurement. The results showed that LPD based Si02 film composition was scarcely affected by the concentration of such impurities as Na, K and Ca contained in the solution. Furthermore it was found that higher H2SiF6 concentration led to Si02 film with lower refractive index and lower etch rate. To have proper understanding of these apparently inconsistent results, the specific role of fluorine contained in the solution and the film was discussed.

  15. Fabrication and super-hydrophilic property of transparent TiO2/SiO2 film from sol-gel process

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Zhang, Yihe; Xu, Caiyun; Yu, Li; Lv, Fengzhu

    2011-11-01

    A series of transparent and super-hydrophilic TiO2/SiO2 composite films with high adhesion to the glass were fabricated by dipping methods. The sol was prepared using peroxotitanium complex (PTC) as precursor by sol-gel process at low temperature. The properties of transmittance, hydrophility and adhesion were characterized by ultraviolet-visible spectrophotometer, water contact angle and the tape test, and the structure was analyzed by Fourier transform infrared spectroscopy (FTIR). The relationship of structure, surfactant and the compound action of TiO2/SiO2 was investigated. The results indicated that the fabricated films achieved excellent transmittance to slide glass of over 90%. Because of the poor adhesion of pure TiO2 film, the TiO2/SiO2 composite film with polyvinyl alcohol (PVA) as the surfactant was prepared. The tape test indicated that the composite film had a steady adhesion on the surface of glass. At the same time, the water contact angle of the films was blow 5° after exposed to the UV light. Furthermore, the glass insulators with TiO2/SiO2 composite film were placed in the outdoor environment, and it showed self-cleaning ability after water drenching. It was proved from the experiments that the transparent TiO2/SiO2 hybrid films with self-cleaning property possessed potential application in the fields of outdoor glass constructions, suspended glass disk insulators and auto windshields.

  16. Fabrication and super-hydrophilic property of transparent TiO2/SiO2 film from sol-gel process

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Zhang, Yihe; Xu, Caiyun; Yu, Li; Lv, Fengzhu

    2012-04-01

    A series of transparent and super-hydrophilic TiO2/SiO2 composite films with high adhesion to the glass were fabricated by dipping methods. The sol was prepared using peroxotitanium complex (PTC) as precursor by sol-gel process at low temperature. The properties of transmittance, hydrophility and adhesion were characterized by ultraviolet-visible spectrophotometer, water contact angle and the tape test, and the structure was analyzed by Fourier transform infrared spectroscopy (FTIR). The relationship of structure, surfactant and the compound action of TiO2/SiO2 was investigated. The results indicated that the fabricated films achieved excellent transmittance to slide glass of over 90%. Because of the poor adhesion of pure TiO2 film, the TiO2/SiO2 composite film with polyvinyl alcohol (PVA) as the surfactant was prepared. The tape test indicated that the composite film had a steady adhesion on the surface of glass. At the same time, the water contact angle of the films was blow 5° after exposed to the UV light. Furthermore, the glass insulators with TiO2/SiO2 composite film were placed in the outdoor environment, and it showed self-cleaning ability after water drenching. It was proved from the experiments that the transparent TiO2/SiO2 hybrid films with self-cleaning property possessed potential application in the fields of outdoor glass constructions, suspended glass disk insulators and auto windshields.

  17. Optical, electrical and dielectric properties of TiO 2-SiO 2 films prepared by a cost effective sol-gel process

    NASA Astrophysics Data System (ADS)

    Vishwas, M.; Rao, K. Narasimha; Gowda, K. V. Arjuna; Chakradhar, R. P. S.

    2011-12-01

    Titanium dioxide (TiO 2) and silicon dioxide (SiO 2) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO 2 and SiO 2 respectively. The pure and composite films of TiO 2 and SiO 2 were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO 2 and SiO 2 sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO 2 films on p-silicon (1 0 0) substrates. The current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 °C for their possible use in optoelectronic applications.

  18. Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.

    PubMed

    Vishwas, M; Rao, K Narasimha; Gowda, K V Arjuna; Chakradhar, R P S

    2011-12-01

    Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications. PMID:21924670

  19. Preparation of MgF2-SiO2 thin films with a low refractive index by a solgel process.

    PubMed

    Ishizawa, Hitoshi; Niisaka, Shunsuke; Murata, Tsuyoshi; Tanaka, Akira

    2008-05-01

    Porous MgF(2)-SiO(2) thin films consisting of MgF(2) particles connected by an amorphous SiO(2) binder are prepared by a solgel process. The films have a low refractive index of 1.26, sufficient strength to withstand wiping by a cloth, and a high environmental resistance. The refractive index of the film can be controlled by changing the processing conditions. Films can be uniformly formed on curved substrates and at relatively low temperatures, such as 100 degrees C. The low refractive index of the film, which cannot be achieved by conventional dry processes, is effective in improving the performance of antireflective coatings. PMID:18449247

  20. Polymeric fibre optic sensor based on a SiO2 nanoparticle film for humidity sensing on wounds

    NASA Astrophysics Data System (ADS)

    Gomez, David; Morgan, Stephen P.; Hayes Gill, Barrie R.; Korposh, Serhiy

    2016-05-01

    Optical fibre sensors have the potential to be incorporated into wound dressings to monitor moisture and predict healing without the need to remove the dressing. A low cost polymeric optical fibre humidity sensor based on evanescent wave absorption is demonstrated for skin humidity measurement. The sensor is fabricated by coating the fibre with a hydrophilic film based on bilayers of Poly(allylamine hydrochloride) (PAH) and SiO2 mesoporous nanoparticles. The Layer-by-Layer method was used for the deposition of the layers. Multimode polymeric optical fibre with a cladding diameter of 250μm was covered by 7 layers of PAH/SiO2 film on the central region of an unclad fibre with a diameter of 190μm. The length of the sensitive region is 30mm. Experiment results show a decrease in light intensity when relative humidity increases due to refractive index changes of the fibre coating. The sensitivity obtained was 200mV/%RH and the sensor was demonstrated to provide a faster response to changes in the humidity of the skin microenvironment than a commercial sensor.

  1. A hybrid model for the charging process of the amorphous SiO2 film in radio frequency microelectromechanical system capacitive switches

    NASA Astrophysics Data System (ADS)

    Wang, Li-Feng; Huang, Qing-An; Tang, Jie-Ying; Liao, Xiao-Ping

    2011-03-01

    Charging is one of the most important reliability issues in radio frequency microelectro- mechanical systems (RF MEMS) capacitive switches since it makes the actuation voltage unstable. This paper proposes a hybrid model to describe the transient dielectric charging and discharging process in the defect-rich amorphous SiO2 RF MEMS capacitive switches and verifies experimentally. The hybrid model contains two parts according to two different charging mechanisms of the amorphous SiO2, which are the polarisation and charge injection. The models for polarisation and for charge injection are established, respectively. Analysis and experimental results show that polarisation is always effective, while the charge injection has a threshold electric field to the amorphous SiO2 film. Under different control voltage conditions, the hybrid model can accurately describe the experimental data. Project supported by the National Natural Science Foundation of China (Grant No. 60676043).

  2. Photosensitivity of 20GeO2 : 80SiO2 hydrogen-loaded and non-hydrogen-loaded thin films

    NASA Astrophysics Data System (ADS)

    Rajni; Pita, K.; Ho, Charles K. F.; Swee Chuan, Tjin; Hin, Kam Chan

    2006-06-01

    Photosensitive materials offer great potential for passive and active optical devices in communication, data manipulation and storage. We prepared photosensitive germanosilicate (20GeO2 : 80SiO2) inorganic thin films by the sol gel method. These films were annealed at various temperatures in the range of 700 900 °C. The films annealed at 900 °C were found to be fully densified and were porous when annealed below 900 °C. The UV KrF laser (248 nm) has been used to induce refractive index change (Δn). We have studied the Fourier transform infra-red (FTIR) spectroscopy and the refractive index changes of the hydrogen-loaded and as-deposited samples before and after UV illumination. For the porous samples, the -OH absorption band around 3400 cm-1 increases with hydrogen-loading and decreases with UV radiation. The hydrogen-loading has induced absorption around 500 600 cm-1 for all our samples (both porous and dense samples) and that indicates the formation of Si H bonds. The Si H absorption bands disappeared after UV illumination. We observed the high Δn of about 0.0094 for the as-deposited dense film annealed at 900 °C and value enhanced to 0.0096 after H2-loading. For our samples, the large induced refractive index change is explained in terms of the formation of the oxygen related defects upon UV exposure. This is related to the induced absorption band around 620 740 cm-1 in the FTIR spectra.

  3. Direct tunneling stress-induced leakage current in ultrathin HfO2/SiO2 gate dielectric stacks

    NASA Astrophysics Data System (ADS)

    Samanta, Piyas; Man, Tsz Yin; Zhang, Qingchun; Zhu, Chunxiang; Chan, Mansun

    2006-11-01

    The conduction mechanism(s) and behavior of direct tunneling stress-induced leakage current (SILC) through ultrathin hafnium oxide (HfO2)/silicon dioxide (SiO2) dual layer gate stack in metal-oxide-semiconductor (MOS) devices have been experimentally investigated in-depth. Both transient and steady-state SILCs have been studied after constant voltage stress (CVS) and constant current stress (CCS) in n-MOS capacitors with negative bias on the tantalum nitride (TaN) gate. The present report clearly indicates that the observed steady-state SILC is due to assisted tunneling via both monoenergetic trapped positive charges and neutral electron traps generated in the HfO2 layer during either CVS or CCS. SILC measured immediately after stress decays slowly due to tunnel detrapping of stress-induced trapped holes in the HfO2 layer. Furthermore, the mechanisms for stress-induced charge carrier generation/trapping and trap creation in the dielectric have been discussed. Our analysis also shows that CVS degrades the dielectric integrity more severely than CCS in the 4.2nm physically thick HfO2/SiO2 stack.

  4. Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Reuter, R.; Gherardi, N.; Benedikt, J.

    2012-11-01

    The continuous deposition of thin SiO2-like films by means of a dielectric barrier discharge with helium or nitrogen gas with small admixture of hexamethyldisiloxane (HMDSO) has been compared to a layer-by-layer deposition process, in which a very thin (0.7 nm and 2.5 nm) films are deposited from HMDSO precursor and treated afterwards by a pure N2 dielectric barrier discharge (DBD). Presented results clearly show that a carbon-free SiO2-like films can be obtained in the latter process, even if the continuous deposition led to carbon-rich material. Surface reactions of N2-DBD generated excited species (metastables, ions, or possibly photons) with surface bonded carbon are responsible for this effect. Moreover, OH-free and oxidation-resistant films can be produced even at the room substrate temperature.

  5. Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed SiO2 thin films for ReRAM.

    PubMed

    Choi, Byung Joon; Chen, Albert B K; Yang, Xiang; Chen, I-Wei

    2011-09-01

    Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics. PMID:24737180

  6. SYNCHROTRON RADIATION, FREE ELECTRON LASER, APPLICATION OF NUCLEAR TECHNOLOGY, ETC.: Identification of pore size in porous SiO2 thin film by positron annihilation

    NASA Astrophysics Data System (ADS)

    Zhang, Zhe; Qin, Xiu-Bo; Wang, Dan-Ni; Yu, Run-Sheng; Wang, Qiao-Zhan; Ma, Yan-Yun; Wang, Bao-Yi

    2009-02-01

    Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

  7. Thickness-dependent white electroluminescence from diamond/CeF3/SiO2 multilayered films

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoping; Liu, Ping; Wang, Lijun; Li, Jian

    2014-03-01

    Diamond/CeF3/SiO2 multilayered films electroluminescent (EL) devices were made, and we found that the EL spectrum at room temperature depends on the CeF3 layer thickness. The EL spectrum shows that the main peaks are located at 527 nm, 593 nm, and 742 nm when the CeF3 layer thickness is less than 0.5 μm, but when the CeF3 layer thickness is greater than 0.5 μm, the electroluminescence spectrum obviously exhibits three bands, which are centered at 310-380 nm (ultraviolet emission), 520-580 nm (green-yellow emission), and 700-735 nm (red emission). The white EL brightness of the device (for thicker CeF3 layer) reaches a maximum of 15 cd/m2 at a forward applied voltage of 225 V, which can be distinguished at the sunlight in the light by the naked eye.

  8. Film growth, adsorption and desorption kinetics of indigo on SiO2

    NASA Astrophysics Data System (ADS)

    Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

    2014-05-01

    Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.

  9. Film growth, adsorption and desorption kinetics of indigo on SiO2

    PubMed Central

    Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

    2015-01-01

    Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer des orption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption. PMID:24832297

  10. Phonon induced luminescence decay in monolayer MoS2 on SiO2/Si substrates

    NASA Astrophysics Data System (ADS)

    Saigal, Nihit; Ghosh, Sandip

    2015-12-01

    Exfoliated monolayer MoS2 films on SiO2/Si substrates have been studied using photoluminescence (PL), Raman and reflectance contrast (RC) spectroscopies. With increase in temperature, the intensity of the two dominant PL spectral features A and D, attributed to A exciton/trion and to defects, seemingly decay in an activated fashion with an energy ˜ 50 meV , which is close to the energies of E2 g 1 and A1g phonons. Comparison of absorption spectrum derived from RC with circular polarization resolved PL spectrum suggests that both D and A emissions are associated with bound excitons, the A emission involving relatively weakly localized ones. The PL decay behaviour is explained using a phenomenological model where non-radiative loss of excitons is determined by the number of excited phonon modes. This corroborates the recent finding of strong A exciton and A1g phonon coupling in monolayer MoS2.

  11. Adsorption and self-assembly of M13 phage into directionally organized structures on C and SiO2 films.

    PubMed

    Moghimian, Pouya; Srot, Vesna; Rothenstein, Dirk; Facey, Sandra J; Harnau, Ludger; Hauer, Bernhard; Bill, Joachim; van Aken, Peter A

    2014-09-30

    A versatile method for the directional assembly of M13 phage using amorphous carbon and SiO2 thin films was demonstrated. A high affinity of the M13 phage macromolecules for incorporation into aligned structures on an amorphous carbon surface was observed at the concentration range, in which the viral nanofibers tend to disorder. In contrast, the viral particles showed less freedom to adopt an aligned orientation on SiO2 films when deposited in close vicinity. Here an interpretation of the role of the carbon surface in significant enhancement of adsorption and generation of viral arrays with a high orientational order was proposed in terms of surface chemistry and competitive electrostatic interactions. This study suggests the use of amorphous carbon substrates as a template for directional organization of a closely-packed and two-dimensional M13 viral film, which can be a promising route to mineralize a variety of smooth and homogeneous inorganic nanostructure layers. PMID:25195499

  12. SiO2 nanoparticle-induced impairment of mitochondrial energy metabolism in hepatocytes directly and through a Kupffer cell-mediated pathway in vitro

    PubMed Central

    Xue, Yang; Chen, Qingqing; Ding, Tingting; Sun, Jiao

    2014-01-01

    The liver has been shown to be a primary target organ for SiO2 nanoparticles in vivo, and may be highly susceptible to damage by these nanoparticles. However, until now, research focusing on the potential toxic effects of SiO2 nanoparticles on mitochondria-associated energy metabolism in hepatocytes has been lacking. In this work, SiO2 nanoparticles 20 nm in diameter were evaluated for their ability to induce dysfunction of mitochondrial energy metabolism. First, a buffalo rat liver (BRL) cell line was directly exposed to SiO2 nanoparticles, which induced cytotoxicity and mitochondrial damage accompanied by decreases in mitochondrial dehydrogenase activity, mitochondrial membrane potential, enzymatic expression in the Krebs cycle, and activity of the mitochondrial respiratory chain complexes I, III and IV. Second, the role of rat-derived Kupffer cells was evaluated. The supernatants from Kupffer cells treated with SiO2 nanoparticles were transferred to stimulate BRL cells. We observed that SiO2 nanoparticles had the ability to activate Kupffer cells, leading to release of tumor necrosis factor-α, nitric oxide, and reactive oxygen species from these cells and subsequently to inhibition of mitochondrial respiratory chain complex I activity in BRL cells. PMID:24959077

  13. Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2

    NASA Astrophysics Data System (ADS)

    Johannessen, B.; Kluth, P.; Llewellyn, D. J.; Foran, G. J.; Cookson, D. J.; Ridgway, M. C.

    2007-11-01

    Elemental Cu nanoparticles embedded in SiO2 were irradiated with 5MeVSn3+ . The nanoparticle structure was studied as a function of Sn3+ fluence by extended x-ray absorption fine structure spectroscopy, small-angle x-ray scattering, and transmission electron microscopy. Prior to irradiation, Cu nanoparticles exhibited the face-centered-cubic structure. Upon irradiation at intermediate fluences ( 1×1013 to 1×1014ions/cm2 ), the first nearest neighbor Cu-Cu coordination number decreased, while the Debye-Waller factor, bondlength, and third cumulant of the bondlength distribution increased. In particular, at a fluence of 1×1014ions/cm2 we argue for the presence of an amorphous Cu phase, for which we deduce the structural parameters. Low temperature annealing (insufficient for nanoparticle growth) of the amorphous Cu returned the nanoparticles to the initial preirradiation structure. At significantly higher irradiation fluences ( 1×1015 to 1×1016ions/cm2 ), the nanoparticles were dissolved in the matrix with a Cu coordination similar to that of Cu2O .

  14. Enhanced high-frequency electromagnetic properties of FeCoB-SiO2/SiO2 multilayered granular films

    NASA Astrophysics Data System (ADS)

    Yang, F. F.; Yan, S. S.; Yu, M. X.; Kang, S. S.; Chen, Y. X.; Sun, J. S.; Xu, Q. T.; Bai, H. L.; Xu, T. S.; Li, Q.; Pan, S. B.; Liu, G. L.; Mei, L. M.

    2012-04-01

    A series of FeCoB-SiO2/SiO2 multilayered granular films with various thickness were prepared by alternating co-sputtering FeCoB and SiO2 targets and single-sputtering SiO2 target. As-deposited films were annealed in a magnetic field at different temperature. The high-frequency magnetic and electrical transport properties were investigated. The films annealed above 250 °C show good soft magnetic properties and obvious uniaxial magnetic anisotropy. The resistivity (ρ), coercivity (Hce) decrease and complex permeability (μ˜), ferromagnetic resonance frequency (fr) increase with increasing annealing temperature and thickness. The desirable high ρ (∼5.92 mΩ cm), considerable frequency linewidth (Δf∼4.02 GHz) and high μ˜ (μ‧=120 at low frequency, μmax″=80) were obtained for the 252 nm films annealed at 250 °C. The amorphous or nanograin phase and strong exchange coupling effect are responsible for the good high-frequency magnetic performance. The electrical transport properties show the films with high ρ and large μ˜ are near the conductive percolation threshold. Moreover, the Δf, damp coefficient (α) and Gilbert damping parameter (G) were discussed based on phenomenological Landau-Lifshitz-Gilbert equation.

  15. Sensitive elements of vacuum sensors based on porous nanostructured SiO2-SnO2 sol-gel films

    NASA Astrophysics Data System (ADS)

    Averin, I. A.; Igoshina, S. E.; Moshnikov, V. A.; Karmanov, A. A.; Pronin, I. A.; Terukov, E. I.

    2015-06-01

    The objects of investigation are porous nanostructured SiO2-SnO2 sol-gel films used as sensitive elements on vacuum sensors. The properties of the films with spherical, labyrinth, and percolation mesh structures are analyzed. It is shown that the resistance of sensitive elements based on these films sharply drops at a pressure below the atmospheric value. Processes taking place in the films at subatmospheric pressures are studied. It is found that the desorption of water vapor increases the resistance of the sensitive elements of vacuum sensors, whereas the desorption of carbon dioxide and oxygen decreases the resistance. This agrees with experimental data.

  16. SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory.

    PubMed

    Ryu, Seung Wook; Lyeo, Ho-Ki; Lee, Jong Ho; Ahn, Young Bae; Kim, Gun Hwan; Kim, Choon Hwan; Kim, Soo Gil; Lee, Se-Ho; Kim, Ka Young; Kim, Jong Hyeop; Kim, Won; Hwang, Cheol Seong; Kim, Hyeong Joon

    2011-06-24

    This study examined the various physical, structural and electrical properties of SiO(2) doped Ge(2)Sb(2)Te(5) (SGST) films for phase change random access memory applications. Interestingly, SGST had a layered structure (LS) resulting from the inhomogeneous distribution of SiO(2) after annealing. The physical parameters able to affect the reset current of phase change memory (I(res)) were predicted from the Joule heating and heat conservation equations. When SiO(2) was doped into GST, thermal conductivity largely decreased by ∼ 55%. The influence of SiO(2)-doping on I(res) was examined using the test phase change memory cell. I(res) was reduced by ∼ 45%. An electro-thermal simulation showed that the reduced thermal conductivity contributes to the improvement of cell efficiency as well as the reduction of I(res), while the increased dynamic resistance contributes only to the latter. The formation and presence of the LS thermal conductivity in the set state test cell after repeated switching was confirmed. PMID:21572208

  17. Effects of Defects in SiO2 Thin Films Prepared on Polyethylene Terephthalate by High-Temperature E-beam Deposition

    NASA Astrophysics Data System (ADS)

    Han, Jin‑Woo; Kang, Hee‑Jin; Kim, Jong‑Hwan; Seo, Dae‑Shik

    2006-08-01

    In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110 °C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110 °C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of -0.2 g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the SiO2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.

  18. XPS study of the Al/SiO2 interface viewed from the SiO2 side

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Grunthaner, F. J.; Maserjian, J.

    1984-01-01

    The first nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is presented. Both X-ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Postmetallization annealing (PMA) at 450 C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.

  19. The enhanced photocatalytic activity and self-cleaning properties of mesoporous SiO2 coated Cu-Bi2O3 thin films.

    PubMed

    Shan, Wenjie; Hu, Yun; Zheng, Mengmeng; Wei, Chaohai

    2015-04-28

    Mesoporous SiO2 coated Cu-Bi2O3 thin films (meso-SiO2/Cu-Bi2O3) were prepared on glass substrates using a simple sol-gel/spin-coating method. The structure and optical properties were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, a UV-vis spectrophotometer and a water contact angle meter. The photocatalytic activity and self-cleaning properties of the films were investigated through the degradation of methyl orange and stearic acid, respectively. It was found that the meso-SiO2/Cu-Bi2O3 thin films were highly transparent and showed excellent superhydrophilicity even in the dark. The thin films exhibited enhanced photocatalytic activity and self-cleaning properties compared to pure Bi2O3 films, which was attributed to the cooperation of the interfacial charge transfer between Bi2O3 and surface Cu species as well as the unique mesoporous SiO2 structure. The results showed that the films can be used as promising self-cleaning and antifogging materials. PMID:25801807

  20. Switchable and tunable film bulk acoustic resonator fabricated using barium strontium titanate active layer and Ta2O5/SiO2 acoustic reflector

    NASA Astrophysics Data System (ADS)

    Sbrockey, N. M.; Kalkur, T. S.; Mansour, A.; Khassaf, H.; Yu, H.; Aindow, M.; Alpay, S. P.; Tompa, G. S.

    2016-08-01

    A solidly mounted acoustic resonator was fabricated using a Ba0.60Sr0.40TiO3 (BST) film deposited by metal organic chemical vapor deposition. The device was acoustically isolated from the substrate using a Bragg reflector consisting of three pairs of Ta2O5/SiO2 layers deposited by chemical solution deposition. Transmission electron microscopy verified that the Bragg reflector was not affected by the high temperatures and oxidizing conditions necessary to process high quality BST films. Electrical characterization of the resonator demonstrated a quality factor (Q) of 320 and an electromechanical coupling coefficient (Kt2) of 7.0% at 11 V.

  1. The structural studies of Ag containing TiO2-SiO2 gels and thin films deposited on steel

    NASA Astrophysics Data System (ADS)

    Adamczyk, Anna; Rokita, Magdalena

    2016-06-01

    FTIR spectroscopic structural studies of titania-silica monolith samples as well as thin films deposited on steel were described in this work. Thin films were synthesized by the sol-gel method applying the dip coating as separate one-component TiO2 and/or SiO2 layers or as two-component TiO2-SiO2 thin films. Silver nanoparticles were incorporated into the structure from pure SiO2 sol, deposited then as an additional layer in those hybrid multilayers systems. Except the spectroscopic studies, XRD diffraction, SEM microscopy with EDX analysis and AFM microscopy were applied. The structural studies allow to describe and compare the structure and the morphology of thin films, as well those Ag free as Ag containing ones, also by the comparison with the structure of bulk samples. In FTIR spectra, the band observed at about 613 cm-1 can be connected with the presence of the non-tetrahedral cation in the structure and is observed only in the spectra of Ag containing bulk samples and thin films. The bands at 435-467 cm-1 are due to the stretching vibrations of Ti-O bonds or as well to the bending vibrations of O-Si-O one. In the ranges of 779-799 cm-1 and 1027-1098 cm-1, the bands ascribed to the symmetric stretching vibrations and asymmetric vibrations of Si-O-Si connections, respectively, are observed. SEM and AFM images gave the information on the microstructure and the topography of samples surface. XRD measurements confirmed the presence of only amorphous phase in samples up to 500 °C and allowed to observe the tendency of their crystallization.

  2. SiO2/TiO2/n-Si/Ag(Cr)/TiO2 thin films with superhydrophilicity and low-emissivity

    NASA Astrophysics Data System (ADS)

    Loka, Chadrasekhar; Ryeol Park, Kyoung; Lee, Kee-Sun

    2016-01-01

    In this study, SiO2/TiO2/n-Si/Ag(Cr)/TiO2 multilayer structures have been designed and deposited by the RF and DC magnetron sputtering at room temperature. The as-deposited TiO2/glass films which are initially amorphous in nature were subjected to post annealing at 673 K for anatase phase TiO2. The anatase TiO2 films showed an optical bandgap ˜3.32 eV. The Ag(Cr)/TiO2 showed very low-emissivity (low-e) value ˜0.081 which is evaluated by using the sheet resistance (6.51 Ω/□) of the films. All the deposited films showed high visible transmittance (˜81%) and high infrared reflectance (72%) which are recorded by using the UV-vis-NIR spectrophotometer. In addition, experimentally obtained optical properties were in good agreement with the simulation data. The TiO2/n-Si heterojunction concept has been employed to enhance the superhydrophilicity of the deposited multilayer stack, TiO2/n-Si/Ag(Cr)/TiO2 films exhibited best superhydrophilicity with water contact angle ˜2°. The deposited multilayer structures SiO2/TiO2/n-Si/Ag(Cr)/TiO2 and TiO2/n-Si/Ag(Cr)/TiO2 achieved significant low-e and superhydrophilicity.

  3. Implantation of plasmonic nanoparticles in SiO2 by pulsed laser irradiation of gold films on SiOx-coated fused silica and subsequent thermal annealing

    NASA Astrophysics Data System (ADS)

    Stolzenburg, H.; Peretzki, P.; Wang, N.; Seibt, M.; Ihlemann, J.

    2016-06-01

    The pulsed UV-laser irradiation of thin noble metal films deposited on glass substrates leads to the incorporation of metal particles in the glass, if a sufficiently high laser fluence is applied. This process is called laser implantation. For the implantation of gold into pure fused silica, high laser fluences (∼1 J/cm2 at 193 nm laser wavelength) are required. Using a SiOx (x ≈ 1) coated SiO2-substrate, the implantation of gold into this coating can be accomplished at significantly lower fluences starting from 0.2 J/cm2 (comparable to those used for standard glass). Particles with diameters in the range of 10-60 nm are implanted to a depth of about 40 nm as identified by transmission electron microscopy. An additional high temperature annealing step in air leads to the oxidation of SiOx to SiO2, without influencing the depth distribution of particles significantly. Only superficial, weakly bound particles are released and can be wiped away. Absorption spectra show a characteristic plasmon resonance peak at 540 nm. Thus, pure silica glass (SiO2) with near surface incorporated plasmonic particles can be fabricated with this method. Such material systems may be useful for example as robust substrates for surface enhanced Raman spectroscopy (SERS).

  4. Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50 °C

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Kobayashi, Akiko; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru

    2014-01-01

    We report the temporal evolution of surface species observed in situ using attenuated total reflection Fourier transform infrared absorption spectroscopy (ATR-FTIR) during plasma-enhanced atomic layer deposition (PE-ALD) of SiO2 films employing aminosilane and an O2/Ar plasma at a temperature of 50 °C. Reversals in the appearance of IR absorbance features associated with SiO-H, C-Hx, and Si-H proved to coincide with the self-limiting reaction property in ALD. Our IR results indicate that an O2/Ar plasma can both removed CHx groups and transform SiH surface species to SiOH. In addition, SiO2 deposition was confirmed by a continuous increase in Si-O absorbance with each PE-ALD step, which becomes stable after several cycles. On the basis of our results, the mechanism of low temperature SiO2 PE-ALD was discussed.

  5. High energy ion irradiation induced surface patterning on a SiO2 glass substrate

    NASA Astrophysics Data System (ADS)

    Srivastava, S. K.; Ganesan, K.; Gangopadhyay, P.; Panigrahi, B. K.; Nair, K. G. M.; Tyagi, A. K.

    2014-11-01

    Experimental results about formation of self-organized surface patterns on a silica glass substrate due to irradiations with high energy Au ions at various angles of incidences have been reported in this paper. Pattern formations are found to vary significantly from theoretical predictions. Orientation, growth of ripples and ripple characteristics observed here do not conform to established results of low energy heavy-ion irradiation studies. High energy Au ion-induced effects (e.g., surface stress, mass redistribution and surface current) have been suitably invoked to explain observed phenomena.

  6. Microstructure and optical dispersion characterization of nanocomposite sol-gel TiO2-SiO2 thin films with different compositions

    NASA Astrophysics Data System (ADS)

    Kermadi, S.; Agoudjil, N.; Sali, S.; Zougar, L.; Boumaour, M.; Broch, L.; En Naciri, A.; Placido, F.

    2015-06-01

    Nanocomposite TiO2-SiO2 thin films with different compositions (from 0 to 100 mol% TiO2) were deposited by sol-gel dip-coating method on silicon substrate. Crystal structure, chemical bonding configuration, composition and morphology evolutions with composition were followed by Raman scattering, Fourier transform infrared spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy respectively. The refractive index and the extinction coefficient were derived in a broad band wavelength (250-900 nm) from spectroscopic ellipsometry data with high accuracy and correlated with composition and microstructure. Results showed an anatase structure for 100% TiO2 with a grain size in 6-10 nm range. Whereas, the inclusion of SiO2 enlarges the optical band gap and suppresses the grain growth up to 4 nm in size. High TiO2 dispersion in SiO2 matrix was observed for all mixed materials. The refractive index (at λ = 600 nm) increases linearly with composition from 1.48 (in 100% SiO2) to 2.22 (in 100% TiO2) leading to lower dense material, its dispersion being discussed in terms of the Wemple-DiDomenico single oscillator model. Hence, the optical parameters, such optical dispersion energies E0 and Ed, the average oscillators, strength S0 and wavelength λ0 and the ratio of the carrier concentration to the effective mass N/m∗ have been derived. The analysis revealed a strong dependence on composition and structure. The optical response was also investigated in term of complex optical conductivity (σ) and both volume and surface energy loss functions (VELF and SELF).

  7. Study on external electric field-induced structural changes in the initial growth of pentacene on amorphous SiO2

    NASA Astrophysics Data System (ADS)

    Zeng, Yuanqi; Tao, Bo; Chen, Jiankui; Yin, Zhouping

    2016-05-01

    External electric field-induced structural changes in the initial growth processes of pentacene on a sylanol-saturated amorphous SiO2 surface have been investigated using molecular dynamics simulations. A series of electric fields with different directions and strengths are applied to the initial lateral-orientated pentacene cluster. After that different molecular orientations are observed, which obviously present the regulatory effects of an electric field on the molecular orientation. When the electric field perpendicular to the molecular plane is applied to the pentacene cluster, the pentacene molecules keep the lying-down conformation regardless of changes in the electric field strength. Contrary to that, under the electric field parallel to the pentacene long axes or short axes with proper strength, the pentacene cluster undergoes a conformational transition from a lying-down conformation to a standing-up one. The results of this work may enrich the information on the electric field-induced orientation controllable fabrication approaches of organic semiconductor thin films.

  8. Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

    NASA Astrophysics Data System (ADS)

    Nagata, Kohki; Ogura, Atsushi; Hirosawa, Ichiro; Suwa, Tomoyuki; Teramoto, Akinobu; Ohmi, Tadahiro

    2016-04-01

    The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO2 thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties.

  9. Room-temperature NH3 gas sensors based on Ag-doped γ-Fe2O3/SiO2 composite films with sub-ppm detection ability.

    PubMed

    Tang, Yongliang; Li, Zhijie; Zu, Xiaotao; Ma, Jinyi; Wang, Lu; Yang, Jing; Du, Bo; Yu, Qingkai

    2015-11-15

    In this report, NH3 gas sensors based on Ag-doped γ-Fe2O3/SiO2 composite films are investigated. The composite films were prepared with a sol-gel process, and the films' electrical resistance responded to the change of NH3 concentration in the environment. The SEM and AFM investigations showed that the films had a porous structure, and the XRD investigation indicated that the size of Ag particles changed with the modification of Ag loading content. Through a comparative gas sensing study among the Ag-doped composite films, undoped composite film, γ-Fe2O3 film, and SiO2 film, the Ag-doped composite films were found to be much more sensitive than the sensors based on the undoped composite film and γ-Fe2O3 film at room temperature, indicating the significant influences of the SiO2 and Ag on the sensing property. Moreover, the sensor based on Ag-doped (4%) γ-Fe2O3/SiO2 composite film was able to detect the NH3 gas at ppb level. Conversely, the responses of the sensor to other test gases (C2H5OH, CO, H2, CH4 and H2S) were all markedly low, suggesting excellent selectivity. PMID:26057440

  10. Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage

    NASA Astrophysics Data System (ADS)

    Zinchenko, V. F.; Lavrent'ev, K. V.; Emel'yanov, V. V.; Vatuev, A. S.

    2016-02-01

    Regularities in the breakdown of thin SiO2 oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO2 breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.

  11. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

    PubMed

    Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

    2016-01-27

    We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7). PMID:26704352

  12. High quality SiO2/Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere

    NASA Astrophysics Data System (ADS)

    Sano, Naoki; Sekiya, Mitsunobu; Hara, Masaki; Kohno, Atsushi; Sameshima, Toshiyuki

    1995-05-01

    A new post-metallization annealing technique was developed to improve the quality of metal-oxide-semiconductor (MOS) devices using SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition as gate insulators. The quality of the interface between SiO2 and crystalline Si was investigated by capacitance-voltage (C-V) measurements. An H2O vapor annealing at 270 C for 30 min efficiently decreased the interface trap density to 2.0 x 10(exp 10) cm(exp -2) eV(exp -1), and the effective oxide charge density from 1 x 10(exp 12) to 5 x 10(exp 9) cm(exp -2). This annealing process was also applied to the fabrication of Al-gate polycrystalline silicon thin film transistors (poly-Si TFT's) at 270 C. In p-channel poly-Si TFT's, the carrier mobility increased from 60-400 cm(exp 2) V(exp -1) s(exp - 1) and the threshold voltage decreased from - 5.5 to - 1.7 V.

  13. Water adsorption, solvation and deliquescence of alkali halide thin films on SiO2 studied by ambient pressure X-ray photoelectron spectroscopy

    SciTech Connect

    Arima, Kenta; Jiang, Peng; Deng, Xingyi; Bluhm, Henrik; Salmeron, Miquel

    2010-03-31

    The adsorption of water on KBr thin films evaporated onto SiO2 was investigated as a function of relative humidity (RH) by ambient pressure X-ray photoelectron spectroscopy. At 30percent RH adsorbed water reaches a coverage of approximately one monolayer. As the humidity continues to increase, the coverage of water remains constant or increases very slowly until 60percent RH, followed by a rapid increase up to 100percent RH. At low RH a significant number of the Br atoms are lost due to irradiation damage. With increasing humidity solvation increases ion mobility and gives rise to a partial recovery of the Br/K ratio. Above 60percent RH the increase of the Br/K ratio accelerates. Above the deliquescence point (85percent RH), the thickness of the water layer continues to increase and reaches more than three layers near saturation. The enhancement of the Br/K ratio at this stage is roughly a factor 2.3 on a 0.5 nm KBr film, indicating a strong preferential segregation of Br ions to the surface of the thin saline solution on SiO2.

  14. Dewetting behavior of electron-beam-deposited Au thin films on various substrates: graphenes, quartz, and SiO2 wafers

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hwan; Kwak, Eun-Hye; Jeong, Goo-Hwan

    2015-02-01

    We demonstrate the dewetting behavior of Au thin films on the following substrates: single- and multilayer mechanically exfoliated graphene, and SiO2 and ST-cut quartz wafers. The 1-nm-thick Au thin films were prepared by electron beam deposition. The mean sizes of the Au nanoparticles from as-deposited samples were 0.4, 0.9, 1.6, and 2.3 nm and increased after a 60-min annealing at 900 °C to 5.1, 6.4, 9.4, and 10.8 nm for SiO2, ST-cut quartz, mono- and bi-layer graphene, respectively. Conversely, the areal densities of the Au nanoparticles decreased in all substrates with increasing annealing time. The different sizes, areal densities, and morphological evolutions of the Au nanoparticles due to annealing on the different substrates imply different interfacial interactions between Au and each surface. In addition, it is worth noting that single-walled carbon nanotubes (SWNTs) can be grown using the dewetted Au nanoparticles on graphene-coated quartz substrates. Finally, the present work can contribute to not merely precise formation of Au nanoparticles via dewetting phenomenon but also surface modification of graphene and SWNT growth.

  15. Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

    NASA Astrophysics Data System (ADS)

    Singh, Jitendra; Ranwa, Sapana; Akhtar, Jamil; Kumar, Mahesh

    2015-06-01

    ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2"-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ˜3.275 eV to ˜3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

  16. XRD, ESCA and C- V investigations of Al 2O 3 SiO 2 composite thin films synthesized by high dose oxygen ion implantation

    NASA Astrophysics Data System (ADS)

    Dubey, S. K.; Yadav, A. D.

    1998-10-01

    High purity aluminium (99.999%) films were deposited onto cleaned silicon substrates. 30 keV 16O 2+ ions were implanted in Al-Si system with dose levels varying from 1 × 10 17 to 7 × 10 17 O 2+ cm -2. X-ray diffraction (XRD) studies reveal the formation of α-Al 2O 3 phase at all doses and γ-Al 2O 3 and SiO 2 phases only for high dose implants. ESCA studies for Al 2p 3/2 and Si 2p lines at various depths confirm the formation of Al 2O 3 at all doses and the gradual chemical transformation of the SiO x towards the stoichiometric composition of SiO 2 with implanted oxygen dose. The interface-state density of Al 2O 3·SiO 2-Si MOS device shows approximately U shape distribution with a discrete peak at <0.4 eV above the valence band edge.

  17. Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

    NASA Astrophysics Data System (ADS)

    Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

    2011-10-01

    In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

  18. Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

    2014-11-01

    Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration.

  19. Solution-processed VO2-SiO2 composite films with simultaneously enhanced luminous transmittance, solar modulation ability and anti-oxidation property.

    PubMed

    Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

    2014-01-01

    Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration. PMID:25384345

  20. Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

    PubMed Central

    Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

    2014-01-01

    Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration. PMID:25384345

  1. Quantitative Estimation of Aluminum-Induced Negative Charge Region Top Area of SiO2 Based on Frequency-Dependent AC Surface Photovoltage

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Wakashima, Hiroya; Ishikawa, Takuma; Ikeda, Masanori

    2007-11-01

    Most aluminum (Al) in Al-contaminated and thermally oxidized n-type silicon (Si) dioxide (SiO2) is clarified to be segregated at the very top area of SiO2, causing a negative charge, as has been suggested by the formation of an (AlOSi)- network and/or AlO2- based on AC surface photovoltage (SPV). For a strongly inverted state at an oxidation temperature of 800 °C for 1 h, the thickness of the Al-induced negative charge region is quantitatively determined to be 2.4 nm on the basis of AC SPV after successive step etching and chemical analysis. As oxidation duration increased at 800 °C for 3 h, the strongly inverted state changed into a weakly inverted state, where the thickness of the Al-rich region is reduced (0.8 nm), proving that more than half of the (AlOSi)- network collapse and/or Al diffuses inside SiO2 during a longer oxidation duration.

  2. Thickness of the {SiO2}/{Si} interface and composition of silicon oxide thin films: effect of wafer cleaning procedures

    NASA Astrophysics Data System (ADS)

    Stedile, F. C.; Baumvol, I. J. R.; Oppenheim, I. F.; Trimaille, I.; Ganem, J.-J.; Rigo, S.

    1996-09-01

    We determined the areal density of Si atoms constituting the oxide-silicon interface and the stoichiometry of ultra-thin silicon oxide films, thermally grown on Si(001) in dry 18O 2 atmospheres, using the channeling of α-particles along the <001> axis of the Si substrates associated with grazing angle detection of the scattered particles. The amount of 18O atoms in the films was determined independently using the 18O(p,α) 15N nuclear reaction at 730 keV. The Si wafers were submitted to different cleaning procedures before oxidation in 18O 2, namely: standard RCA cleaning, HF etching followed by a rinse in ethanol and rapid thermal cleaning (RTC) under high vacuum. The stoichiometry of all oxide films having thicknesses between 2 and 13 nm could be fitted assuming a ratio {O}/{Si} = 2 , that is, the films were constituted by silicon dioxide. By comparing the results for samples cleaned in different ways, however, we noticed a pronounced change in the number of atoms in the non-registered Si layers at the {SiO2}/{Si} interface and so in the thickness of these interfaces.

  3. Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

    NASA Astrophysics Data System (ADS)

    Kao, T. H.; Mukherjee, S.; Yang, H. D.

    2013-11-01

    Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

  4. High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

    NASA Technical Reports Server (NTRS)

    Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

    1990-01-01

    Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

  5. Optical properties of ion-beam-synthesized Au nanoparticles in SiO2 matrix

    NASA Astrophysics Data System (ADS)

    Hsieh, Chang-Lin; Oyoshi, Keiji; Chao, Der-Sheng; Tsai, Hsu-Sheng; Hong, Wei-Lun; Takeda, Yoshihiko; Liang, Jenq-Horng

    2016-05-01

    In recent years, gold (Au) nanoparticles have been synthesized via various methods and used in optical and biomedical detection. Au nanoparticles contain some remarkable dimension-dependent optical properties due to surface plasmon resonance (SPR) in Au nanoparticles which causes high absorption in visible light regions. Since SPR in well-crystallized Au nanoparticles can enhance the local electromagnetic field, it is thus expected that greater efficiency in the photoluminescence (PL) originating from oxygen deficiency centers (ODC) can be achieved in Au-implanted SiO2 matrix. In order to demonstrate the enhancement of PL, Au nanoparticles were formed in SiO2 film using ion beam synthesis and their optical and microstructural properties were also investigated in this study. The results revealed that a clear absorption peak at approximately 530 nm was identified in the UV-Vis spectra and was attributed to SPR induced by Au nanoparticles in SiO2. The SPR of Au nanoparticles is also dependent on thermal treatment conditions, such as post-annealing temperature and ambient. The Au nanoparticle-containing SiO2 film also displayed several distinctive peaks at approximately 320, 360, 460, and 600 nm in the PL spectra and were found to be associated with ODC-related defects and non-bridging oxygen hole centers (NBOHC) in SiO2. In addition, the PL peak intensities increased as post-annealing temperature increased, a finding contradictory to the defect recovery but highly consistent with the SPR tendency. A maximum PL emission was achieved when the Au-implanted SiO2 film was annealed at 1100 °C for 1 h under N2. Therefore, the existence of Au nanoparticles in SiO2 film can induce SPR effects as well as enhance PL emission resulting from defect-related luminescence centers.

  6. Fabrication of mechanically robust, self-cleaning and optically high-performance hybrid thin films by SiO2&TiO2 double-shelled hollow nanospheres

    NASA Astrophysics Data System (ADS)

    Yao, Lin; He, Junhui; Geng, Zhi; Ren, Tingting

    2015-07-01

    Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings.Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02467f

  7. Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

    NASA Astrophysics Data System (ADS)

    Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

    2015-02-01

    Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

  8. Peculiarities of optical absorption originating from boundaries of quasi-crystalline Si-C-O-N films deposited on a SiO 2 amorphous-like substrate

    NASA Astrophysics Data System (ADS)

    Makowska-Janusik, M.

    2004-08-01

    The ultraviolet (UV)-absorption spectra, originating from boundaries formed by partially crystallised Si-C-O-N film deposited on a SiO 2 substrate, were simulated using a semi-empirical quantum-chemical parametrisation method (PM3). Several Si-C-O-N modelled structural clusters, covered with different types of atoms, namely: carbon, silicon, oxygen and hydrogen, were considered. The initial geometry of the investigated clusters was built following extended X-ray absorption fine structure experimental data. Each of the considered clusters was geometrically optimised by total energy minimisation to simulate the influence of the interface, formed between the films and substrate, on the electronic parameters of the investigated structure. Correlation was found between the total energy of a particular cluster, the values of the HOMO-LUMO energy gap splitting and the spectral features of the electronic density of states (DOS). A substantial influence of external sheets on spectral positions in the DOS was found. For the UV-absorption spectra, additional spectral maxima did appear upon changing of the Si-C-O-N covering sheet. The present work is devoted to a study of the influence of the cluster's boundary conditions (surrounding chosen cluster shell) on electronic properties and optical absorption of the corresponding Si-C-O-N clusters.

  9. Using instability of nanometric liquid Cu films on SiO2 substrates to determine the underlying van der Waals potential

    NASA Astrophysics Data System (ADS)

    González, Alejandro G.; Diez, Javier A.; Wu, Yueying; Fowlkes, Jason D.; Rack, Philip D.; Kondic, Lou

    2013-11-01

    We study the instability of nanometric Cu thin films on a SiO2 substrate. The metal is melted by means of laser pulses for some tens of nanoseconds. The free surface destabilizes during the liquid lifetime, leading to the formation of holes at first and to metal drops on the substrate in later stages. By analyzing the Fourier transforms of the SEM images obtained during the metal film evolution, we determine the emerging length scales for both early and late stages of the instability development. The results are analyzed within the framework of a long-wave hydrodynamic model, which introduces van der Waals forces by means of disjoining and conjoining pressures. These forces are characterized by a pair of exponents for the ratio h / h * , where h is the liquid thickness and h* is a residual one. We find that the pair (3 , 2) provides a good agreement for the relationship of the wavelength with maximum growth rate, λm, while other typical pairs, such as (4 , 3) and (9 , 3) do not provide accurate description of the experimental data. Supported by CONICET-Argentina grant PIP 844/2011 (AGG, JAD), and by NSF grants CBET-1235651 (PDR) and CBET-1235710 (LK).

  10. Stress relaxation in dual ion beam sputtered Nb2O5 and SiO2 thin films: application in a Fabry-Pérot filter array with 3D nanoimprinted cavities

    NASA Astrophysics Data System (ADS)

    Ullah, Anayat; Wilke, Hans; Memon, Imran; Shen, Yannan; Nguyen, Duc Toan; Woidt, Carsten; Hillmer, Hartmut

    2015-05-01

    Miniaturized spectrometers can be implemented using Fabry-Pérot (FP) filter arrays. Such filters are defined by two parallel mirrors with a resonance cavity in between. For high optical quality, ion beam sputtered distributed Bragg reflectors (DBRs), with alternating high and low refractive index material pairs, can be used as the FP mirrors; while 3D nanoimprint technology provides an efficient way of implementing multiple organic FP cavities of different heights in a single step. However, the high residual stress in ion beam sputtered films results in poor adhesion between the DBR films and the organic polymer cavities, causing debonding of the DBR. Therefore, the residual stress of the ion beam sputtered films forming the DBRs must be reduced. Niobium pentoxide (Nb2O5) and silicon dioxide (SiO2) are used as the DBR materials in this work due to their high index contrast, resulting in high reflectivity for only a few alternating pairs. Stress relaxation in ion beam sputtered Nb2O5 and SiO2 films is achieved in this work by deposition under simultaneous high energy ion bombardment (oxygen and argon gas mixture) from a second ion source. Using this technique, the film density and hence compressive film stress for both Nb2O5 and SiO2 films is reduced without introducing any additional optical absorption in the films. FP filter arrays fabricated with stress reduced Nb2O5 and SiO2 as DBR films exhibit high optical and mechanical performance, with good adhesion between the films and the polymer cavity.

  11. Optical and physical properties of solgel-derived GeO2:SiO2 films in photonic applications

    NASA Astrophysics Data System (ADS)

    Ho, Charles K. F.; Pal, Rajni; Djie, H. S.; Pita, Kantisara; Ngo, Nam Quoc; Osipowicz, T.

    2007-07-01

    The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO2:(1-x)SiO2) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05≤x≤0.40): determination of spectral optical properties, UV imprinting of optical waveguides with relatively large index change (Δn), and quantum-well intermixing enhancement observed in InGaAs(P)/InP quantum-well optical devices. The implications of the results are discussed.

  12. Optical and physical properties of solgel-derived GeO2:SiO2 films in photonic applications.

    PubMed

    Ho, Charles K F; Pal, Rajni; Djie, H S; Pita, Kantisara; Ngo, Nam Quoc; Osipowicz, T

    2007-07-10

    The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO(2):(1-x)SiO(2)) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05

  13. Organic-Modified SiO2 Thin Film Coatings Obtained by the Sol-Gel Method

    NASA Astrophysics Data System (ADS)

    Zareba-Grodź, I.; Szeluga, U.; Bukowska, E.; Hermanowicz, K.; Miśta, W.; Maruszewski, K.

    2006-02-01

    Transparent thin films of silica-containing organic copolymers have been obtained by combining organic photopolymerisation and the sol-gel method. The samples have been characterized via IR spectroscopy, N2-adsorption (77 K), thermal gravimetric analysis (TGA) and differential thermal analysis (DTA). The viscoelastic nature of the materials have been investigated via the DMTA technique by applying stress to the samples and monitoring their responses. Textural properties such as: specific surface areas (SBET), pore volume (Vp), average pore sizes (Rp) and micropore volumes (VDR) have been obtained. The complete adsorption-desorption isotherms and pore size distributions have been analyzed following the Dollimore-Heal method.

  14. Effects of addition of supramolecular assembly on the anatase nanocrystalline precipitation of sol-gel derived SiO2-TiO2 coating films by hot-water treatment.

    PubMed

    Katagiri, Kiyofumi; Harada, Genki; Matsuda, Atsunori; Kogure, Toshihiro; Muto, Hiroyuki; Sakai, Mototsugu

    2006-06-01

    Effects of the addition of a supramolecular assembly of cetyltrimethylammonium bromide in SiO2-TiO2 gel films on the formation of anatase type TiO2 nanocrystals with hot-water treatment were investigated. Anatase nanocrystals were formed in the whole SiO2-TiO2 gel films with the addition of cetyltrimethylammonium bromide by the treatment, whereas the nanocrystals were formed only on the film surface in the case of gel films without cetyltrimethylammonium bromide. Cetyltrimethylammonium bromide molecules in the SiO2-TiO2 gel films were completely removed by the hot-water treatment and the following UV irradiation. In the usual procedure for preparation of porous materials, the removal of template molecular assemblies required high temperature treatment over 400 degrees C. In this system, all the processes were performed at temperatures less than 100 degrees C. Additionally, the porous structure produced by the removal of micellar assembly allowed anatase nanocrystals to be formed inside the films. Therefore, the method presented in this work provides us with the novel photocatalyst coatings of porous membrane with highly-dispersed TiO2 nanocrystals via low temperature process. PMID:17025087

  15. Understanding surface core-level shifts using the Auger parameter: A study of Pd atoms adsorbed on ultrathin SiO2 films

    NASA Astrophysics Data System (ADS)

    Kaden, William E.; Büchner, Christin; Lichtenstein, Leonid; Stuckenholz, Stefanie; Ringleb, Franziska; Heyde, Markus; Sterrer, Martin; Freund, Hans-Joachim; Giordano, Livia; Pacchioni, Gianfranco; Nelin, Connie J.; Bagus, Paul S.

    2014-03-01

    Auger parameter (Δα) measurements have been employed to determine the extent to which initial- and final-state effects govern surface core-level shifts in x-ray photoelectron spectroscopy (XPS) measurements of Pd atoms confined between a bilayer SiO2 film and its Ru(0001) support. For atoms bound in this manner, we note negative binding energy shifts (ΔBEs) of ˜0.3 eV, relative to the Pd 3d peak position in the bulk, and attribute these shifts to large variations in the initial-state orbital energies of the supported atoms (˜1.1 eV towards EF), coupled with decreased final-state relaxation contributions (˜0.8 eV). Theoretical calculations reveal that, despite small partial positive charges and decreased final-state screening, the decreased 4d-5sp hybridization of the undercoordinated Pd atoms results in large enough upward 3d orbital-energy shifts to yield the net-negative ΔBE noted by XPS.

  16. The Study of Femtosecond Laser Irradiation on GaAs Solar Cells With TiO2/SiO2 Anti-Reflection Films

    NASA Astrophysics Data System (ADS)

    Hua, Yinqun; Shi, Zhiguo; Wu, Wenhui; Chen, Ruifang; Rong, Zhen; Ye, Yunxia; Liu, Haixia

    Femtosecond laser ablation on GaAs solar cells for space power has been investigated. In particular, we studied the effects of laser energy and laser number on the ablation of solar cells. Furthermore, the morphologies and microstructure of ablation were characterized by the non-contact optical profilometer and scanning electron microscope (SEM). The photovoltaic properties were tested by the volt ampere characteristic test system. The abaltion threshold of the TiO2/SiO2 anti-reflection film of GaAs solar cells was obtained from the linear fit of the dependence of the square diameter of the ablated area with the natural logarithm of the femtosecond laser pulse energy, the resulting threshold of the laser fluence is about 0.31J/cm2, and the corresponding energy is 5.4uJ. The ablation depth showed nonlinear dependence of energy. With the fixed energy 6uJ and the increasing laser number, the damage degree increases obviously. Furthermore, the electric properties also suffer a certain degradation. Among all the evaluated electric properties, the photoelectric conversion efficiency (η) degraded remarkably.

  17. Intensified magneto-resistance by rapid thermal annealing in magnetite (Fe3O4) thin film on SiO2 glass substrate

    NASA Astrophysics Data System (ADS)

    Kobori, H.; Morii, K.; Yamasaki, A.; Sugimura, A.; Taniguchi, T.; Horie, T.; Naitoh, Y.; Shimizu, T.

    2012-12-01

    We have observed large magneto-resistance (MR) intensified by rapid thermal annealing (RTA) in magnetite (Fe3O4) thin film (MTF) on SiO2 glass (a-SiO2) substrate. The MTF was produced by the RF magnetron sputtering method by using a magnetite target. The electrical resistivity (ER) of as-grown MTF (AG-MTF) showed the Mott's variable range hopping behavior, which implies that the AG-MTF is amorphous-like. Although the magneto-resistance (MR) ratio of bulk single crystal is very small except around the Verwey transition temperature (VTT), that of the AG-MTF showed moderately large below room temperature. Due to RTA of the AG-MTF by use of an IR image furnace, the MR ratio of MTFs was intensified, and especially by the annealing around the Curie temperature (585°C) of magnetite. Furthermore the ER of the rapid thermally annealed MTF (RTA-MTF) showed a slight kink at around the VTT, which indicates that the crystallinity of the RTA-MTF is higher than that of the AG-MTF The MTF produced by the RF magnetron sputtering method are composed of magnetite fine particles (MFPs). We consider that the directions of magnetic moments of MFPs in the MTF were spatially randomized by the RTA and the strong spin scattering of itinerant electrons transferring between adjacent MFPs caused the intensification of the MR ratio.

  18. Shock-induced transformations in the system NaAlSiO4-SiO2 - A new interpretation

    NASA Technical Reports Server (NTRS)

    Sekine, Toshimori; Ahrens, Thomas J.

    1992-01-01

    New internally consistent interpretations of the phases represented by the high pressure phase shock wave data for an albite-rich rock, jadeite, and nepheline in the system NaAlSiO4-SiO2, are obtained using the results of static high pressure investigations, and the recent discovery of the hollandite phase in a shocked meteorite. We conclude that nepheline transforms directly to the calcium ferrite structure, whereas albite transforms possibly to the hollandite structure. Shock Hugoniots for the other plagioclase and alkali feldspars also indicate that these transform to hollandite structures. The pressure-volume data at high pressure could alternatively represent the compression of an amorphous phase. Moreover, the shock Hugoniot data are expected to reflect the properties of the melt above shock stresses of 60-80 GPa. The third order Birch-Murnaghan equation of state parameters are given for the calcium ferrite type NaAlSiO4 and for albite-rich, orthoclase-rich, and anorthite-rich hollandites.

  19. Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma

    NASA Astrophysics Data System (ADS)

    Zhang, Hai; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2016-01-01

    We demonstrated the formation of high-density iron silicide nanodots (NDs) on thermally grown SiO2 by exposing an electron-beam-evaporated Fe/amorphous-Si/Fe (Fe/a-Si/Fe) trilayer stack to remote H2 plasma without any external heating and characterized their silicidation state and crystalline phase. After the remote H2 plasma exposure, the formation of NDs with an areal density of ˜4.3 × 1011 cm-2 and an average height of ˜7.1 nm was confirmed. X-ray photoelectron spectroscopy (XPS) analyses indicate silicidation reaction induced by the remote H2 plasma exposure, which was accompanied by the agglomeration of Fe and Si atoms on the SiO2 surface. The formation of a crystalline β-FeSi2 phase was confirmed by Raman scattering spectroscopy and XRD pattern measurements. The electrical separation among the β-FeSi2 NDs was confirmed from changes in surface potential due to charging of the dots. The surface potential of the NDs changed in a stepwise manner with respect to the tip voltage because of multistep electron injection into and extraction from the semiconductor β-FeSi2 NDs.

  20. Effect of multilayer structure on high-frequency properties of FeCo/(FeCo)0.63(SiO2)0.37 nanogranular films on flexible substrates

    PubMed Central

    2013-01-01

    The high-frequency properties of the FeCo-SiO2 monolayer nanogranular films and FeCo/(FeCo)0.63(SiO2)0.37 multilayer nanogranular films which were elaborated on flexible substrates by magnetron sputtering system were studied. Compared to the monolayer films with the same FeCo content, the multilayer structures comprised of FeCo/(FeCo)0.63(SiO2)0.37 exhibit more excellent properties that the real and imaginary parts of permeability, more than the double value of the monolayer, increase to 250 and 350, respectively. The variation was considered owing to the reduction of the anisotropy field. PMID:23641952

  1. Plasmon-induced charge separation at two-dimensional gold semishell arrays on SiO2@TiO2 colloidal crystals

    NASA Astrophysics Data System (ADS)

    Wu, Ling; Nishi, Hiroyasu; Tatsuma, Tetsu

    2015-10-01

    Photoelectrodes based on plasmonic Au semishell (or halfshell) arrays are developed. A colloidal crystal consisting of SiO2@TiO2 core-shell particles is prepared on a TiO2-coated transparent electrode. A Au semishell (or halfshell) array is deposited by sputtering or evaporation on the colloidal crystal. An electrode with the semishell (or halfshell) array exhibits negative photopotential shifts and anodic photocurrents under visible light at 500-800 nm wavelengths in an aqueous electrolyte containing an electron donor. In particular, hydroquinone and ethanol are good electron donors. The photocurrents can be explained in terms of plasmon-induced charge separation at the Au-TiO2 interface.

  2. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  3. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  4. Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers

    NASA Astrophysics Data System (ADS)

    Yeo, J. S.; Akella, A.; Huang, T. F.; Hesselink, L.

    1998-03-01

    CsLiB6O10 (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO2 and CaF2 as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of 425 to 725°C. A CaF2 buffer layer is grown on Si by laser ablation while SiO2 is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF2 is growth with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF2 is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO2/Si and CaF2/Si (100). Analysis of reflectance spectra from CLBO/SiO2/Si yields the absorption edge at 182 nm. Surface roughness of the CaF2 and CLBO/CaF2/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF2 and CLBO limits the application of CLBO for waveguiding measurement.

  5. Direct measurements of irradiation-induced creep in micropillars of amorphous Cu56Ti38Ag6, Zr52Ni48, Si, and SiO2

    NASA Astrophysics Data System (ADS)

    Özerinç, Sezer; Kim, Hoe Joon; Averback, Robert S.; King, William P.

    2015-01-01

    We report in situ measurements of irradiation-induced creep on amorphous (a-) Cu56Ti38Ag6, Zr52Ni48, Si, and SiO2. Micropillars 1 μm in diameter and 2 μm in height were irradiated with ˜2 MeV heavy ions during uniaxial compression at room temperature. The creep measurements were performed using a custom mechanical testing apparatus utilizing a nanopositioner, a silicon beam transducer, and an interferometric laser displacement sensor. We observed Newtonian flow in all tested materials. For a-Cu56Ti38Ag6, a-Zr52Ni48, a-Si, and Kr+ irradiated a-SiO2 irradiation-induced fluidities were found to be nearly the same, ≈3 GPa-1 dpa-1, whereas for Ne+ irradiated a-SiO2 the fluidity was much higher, 83 GPa-1 dpa-1. A fluidity of 3 GPa-1 dpa-1 can be explained by point-defect mediated plastic flow induced by nuclear collisions. The fluidity of a-SiO2 can also be explained by this model when nuclear stopping dominates the energy loss, but when the electronic stopping exceeds 1 keV/nm, stress relaxation in thermal spikes also contributes to the fluidity.

  6. Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics

    PubMed Central

    Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

    2014-01-01

    Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics. PMID:25297473

  7. Using shaped pulses to probe energy deposition during laser-induced damage of SiO2 surfaces

    SciTech Connect

    Carr, C W; Cross, D; Feit, M D; Bude, J D

    2008-10-24

    Laser-induced damage initiation in silica has been shown to follow a power-law behavior with respect to pulse-length. Models based on thermal diffusion physics can successfully predict this scaling and the effect of pulse shape for pulses between about 3ns and 10ns. In this work we use sophisticated new measurement techniques and novel pulse shape experiments to test the limits of this scaling. We show that simple pulse length scaling fails for pulses below about 3ns. Furthermore, double pulse initiation experiments suggest that energy absorbed by the first pulse is lost on time scales much shorter than would be predicted for thermal diffusion. This time scale for energy loss can be strongly modulated by maintaining a small but non-zero intensity between the pulses. By producing damage with various pulse shapes and pulse trains it is demonstrated that the properties of any hypothetical thermal absorber become highly constrained.

  8. Time-resolved imaging of material response during laser-induced bulk damage in SiO2

    SciTech Connect

    Demos, S G; Negres, R A

    2008-10-24

    We report on time resolved imaging of the dynamic events taking place during laser-induced damage in the bulk of fused silica samples with nanosecond temporal resolution and one micron spatial resolution. These events include: shock/pressure wave formation and propagation, transient absorption, crack propagation and formation of residual stress fields. The work has been performed using a time-resolved microscope system that utilizes a probe pulse to acquire images at delay times covering the entire timeline of a damage event. Image information is enhanced using polarized illumination and simultaneously recording the two orthogonal polarization image components. For the case of fused silica, an electronic excitation is first observed accompanied by the onset of a pressure wave generation and propagation. Cracks are seen to form early in the process and reach their final size at about 25 ns into the damage event. In addition, changes that in part are attributed to transient absorption in the modified material are observed for delays up to about 200 microseconds.

  9. O atoms loss coefficient on porous SiO2 and TiO2 measured by plasma induced fluorescence

    NASA Astrophysics Data System (ADS)

    Allegraud, Katia; Gatilova, Lina; Guaitella, Olivier; Guillon, Jean; Rousseau, Antoine

    2006-10-01

    The time evolution of O atoms density in the gas phase during the post-discharge of a pulsed plasma is studied using a plasma induced fluorescence technique (PIF): a main long pulse creates the plasma and a shorter one re-excites atoms in the time post-discharge was used. The gas pressure is 133 Pa in N2/O2 mixture and the plasma is a pulsed DC discharge. The surface loss coefficient of O atoms on pyrex, porous silica, porous TiO2 is measured, this latter being a photocatalytic material. It is shown that the presence of porous silica or TiO2 leads to a stong increase of the O atom surface loss coefficient. When nano cluster of TiO2 are deposited on porous silica, the loss coefficient is first high and comparable to the case of the porous silica, but decreases after few milliseconds. Such a decrease of the surface loss coefficient has recently been reported in a pulsed microwave discharge [1]. The effect of the pre-irradiation of the porous materials by external ultraviolet is also studied. [1] G. Cartry, X. Duten and A. Rousseau Plasma Sources Sci. Technol. 15 (2006) 479--488

  10. In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

    2016-08-01

    In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN, and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for closing the Ru layer on all three substrates. The Ru layer closes (100% Ru surface signal) at about 2.0, 3.2, and 4.7 nm on top of SiO2, SiN, and Si, respectively. In-depth Ru concentration profiles can be reconstructed from the Ru surface coverages when considering an error function like model. The large intermixing (4.7 nm) for the Ru-on-Si system is compared to the reverse system (Si-on-Ru), where only 0.9 nm intermixing occurs. The difference is predominantly explained by the strong Si surface segregation that is observed for Ru-on-Si. This surface segregation effect is also observed for Ru-on-SiN but is absent for Ru-on-SiO2. For this last system, in vacuo HS-LEIS analysis revealed surface oxygen directly after deposition, which suggests an oxygen surface segregation effect for Ru-on-SiO2. In vacuo XPS measurements confirmed this hypothesis based on the reaction of Ru with oxygen from the SiO2, followed by oxygen surface segregation.

  11. Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films

    PubMed Central

    2011-01-01

    We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content. PMID:21711698

  12. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO2 using the induced and secondary current measurements

    NASA Astrophysics Data System (ADS)

    Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

    2016-01-01

    Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO2 is evaluated at different temperatures (in the range 300-663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 1010 s-1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  13. Orientation-induced enhancement in electromagnetic properties of ZnFe2O4/SiO2/PANI core/shell/shell nanostructured disks

    NASA Astrophysics Data System (ADS)

    Wang, Jiaheng; Or, Siu Wing

    2016-05-01

    ZnFe2O4/SiO2/PANI (ZSP) core/shell/shell nanostructured disks are prepared and fabricated into paraffin-bonded ZSP composite rings with random, vertical, and horizontal orientations of the easy magnetization planes of the ZSP disks in the paraffin binder in order to study the effect of directional orientation of the easy magnetization planes on their electromagnetic properties. The easy magnetization planes induced by shape anisotropy and oriented by a magnetic field in the vertically oriented ring result in a general enhancement in permeability of 7-60% in the broad UHF-Ku (0.1-18 GHz) bands, while those in the horizontally oriented ring lead to a significant enhancement of 58-1100% in the low-frequency L and S (1-4 GHz) bands, in comparison with the randomly oriented ring. The observed permeability agrees with the theoretical prediction based on the Landau-Lifshitz-Gilbert equation and the Bruggeman's effective medium theory. The horizontal and vertical arrangements of dipolar polarizations in the vertically and horizontally oriented rings give rise to 3-11% enhancement and weakening in permittivity, respectively, compared to the randomly oriented ring. The enhancement in permeability also improves and broadens the electromagnetic wave absorption in both vertically and horizontally oriented rings, especially in the L and S bands for the horizontally oriented ring.

  14. Densification and residual stress induced by CO2 laser-based mitigation of SiO2 surfaces

    SciTech Connect

    Feit, M D; Matthews, M J; Soules, T F; Stolken, J S

    2010-10-21

    Knowing the ultimate surface morphology resulting from CO{sub 2} laser mitigation of induced laser damage is important both for determining adequate treatment protocols, and for preventing deleterious intensification upon subsequent illumination of downstream optics. Physical effects such as evaporation, viscous flow and densification can strongly affect the final morphology of the treated site. Evaporation is a strong function of temperature and will play a leading role in determining pit shapes when the evaporation rate is large, both because of material loss and redeposition. Viscous motion of the hot molten material during heating and cooling can redistribute material due to surface tension gradients (Marangoni effect) and vapor recoil pressure effects. Less well known, perhaps, is that silica can densify as a result of structural relaxation, to a degree depending on the local thermal history. The specific volume shrinkage due to structural relaxation can be mistaken for material loss due to evaporation. Unlike evaporation, however, local density change can be reversed by post annealing. All of these effects must be taken into account to adequately describe the final morphology and optical properties of single and multiple-pass mitigation protocols. We have investigated, experimentally and theoretically, the significance of such densification on residual stress and under what circumstances it can compete with evaporation in determining the ultimate post treatment surface shape. In general, understanding final surface configurations requires taking all these factors including local structural relaxation densification, and therefore the thermal history, into account. We find that surface depressions due to densification can dominate surface morphology in the non-evaporative regime when peak temperatures are below 2100K.

  15. Enhanced and Retarded SiO2 Growth on Thermally Oxidized Fe-Contaminated n-Type Si(001) Surfaces

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Hagiwara, Hiroyuki

    2013-04-01

    At the beginning of the oxidation of Fe-contaminated n-type Si(001) surfaces, Fe reacted with oxygen (O2) on the silicon (Si) substrate to form Fe2O3 and oxygen-induced point defects (emitted Si + vacancies). SiO2 growth was mainly enhanced by catalytic action of Fe. At 650 °C, SiO2 growth of the contaminated samples was faster than in reference samples rinsed in RCA solution during the first 60 min. However, it substantially slowed and became less than that of the reference samples. As the oxidation advanced, approximately half of the contaminated Fe atoms became concentrated close to the surface area of the SiO2 film layer. This Fe2O3-rich SiO2 layer acted as a diffusion barrier against oxygen species. The diffusion of oxygen atoms toward the SiO2/Si interface may have been reduced, and in turn, the emission of Si self-interstitials owing to oxidation-induced strain may have been decreased at the SiO2/Si interface, resulting in the retarded oxide growth. These results are evidence that emitted Si self-interstitials are oxidized not in the Fe2O3-rich SiO2 layer, but at the SiO2/Si interface in accordance with a previously proposed model. A possible mechanism based on the interfacial Si emission model is discussed. The activation energies for the oxide growth are found to be in accord with the enhanced and reduced growths of the Fe-contaminated samples.

  16. Testing Asymmetry in Plasma-Ball Growth Seeded by a Nanoscale Absorbing Defect Embedded in a SiO2 Thin-Film Matrix Subjected to UV Pulsed-Laser Radiation

    SciTech Connect

    Papernov, S.; Schmid, A.W.

    2008-09-16

    Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO2 thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified.

  17. Quantum-confinement effect in individual Ge1-xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Nakamura, Yoshiaki; Masada, Akiko; Ichikawa, Masakazu

    2007-07-01

    The authors observed a quantum-confinement effect in individual Ge1-xSnx quantum dots (QDs) on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy at room temperature. The quantum-confinement effect was featured by an increase in the energy band gap of ˜1.5eV with a decrease in QD diameter from 35to4nm. The peaks for quantum levels of QDs became broader with a decrease in the height-diameter aspect ratio of QDs, demonstrating the gradual emergence of two dimensionality in density of states of quasi zero-dimensional QDs with the QD flattening.

  18. Epitaxial growth of ultrahigh density Ge1-xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films

    NASA Astrophysics Data System (ADS)

    Nakamura, Yoshiaki; Masada, Akiko; Cho, Sung-Pyo; Tanaka, Nobuo; Ichikawa, Masakazu

    2007-12-01

    A method to form epitaxial Ge1-xSnx quantum dots (QDs) on Si (111) substrates has been developed by codeposition of Ge and Sn on ultrathin SiO2 films with predeposited Ge nuclei. Hemispherical Ge1-xSnx QDs with an ultrahigh density (˜1012 cm-2) were epitaxially grown in the nanometer-size range. The QD size was controlled by changing the GeSn deposition amount. High-resolution transmission electron microscopy observations revealed that the main formed Ge1-xSnx QDs had less strain and no misfit dislocations.

  19. Effects of Line and Pillar Array Microengineered SiO2 Thin Films on the Osteogenic Differentiation of Human Bone Marrow-Derived Mesenchymal Stem Cells.

    PubMed

    Carvalho, Angela; Pelaez-Vargas, Alejandro; Hansford, Derek J; Fernandes, Maria H; Monteiro, Fernando J

    2016-02-01

    A primary goal in bone tissue engineering is the design of implants that induce controlled, guided, and rapid healing. The events that normally lead to the integration of an implant into bone and determine the performance of the device occur mainly at the tissue-implant interface. Topographical surface modification of a biomaterial might be an efficient tool for inducing stem cell osteogenic differentiation and replace the use of biochemical stimuli. The main goal of this work was to develop micropatterned bioactive silica thin films to induce the osteogenic differentiation of human bone marrow-derived mesenchymal stem cells (hMSCs) only through topographical stimuli. Line and pillar micropatterns were developed by a combination of sol-gel/soft lithography and characterized by scanning electron microscopy, atomic force microscopy, and contact angle measurements. hMSCs were cultured onto the microfabricated thin films and flat control for up to 21 days under basal conditions. The micropatterned groups induced levels of osteogenic differentiation and expression of osteoblast-associated markers higher than those of the flat controls. Via comparison of the micropatterns, the pillars caused a stronger response of the osteogenic differentiation of hMSCs with a higher level of expression of osteoblast-associated markers, ALP activity, and extracellular matrix mineralization after the cells had been cultured for 21 days. These findings suggest that specific microtopographic cues can direct hMSCs toward osteogenic differentiation. PMID:26771563

  20. Cu doping effect on FePt grains prepared by rapid thermal annealing on SiO2 substrate and wall structure in TbFeCo/FePt CGC-like film

    NASA Astrophysics Data System (ADS)

    Itoh, Akiyoshi; Itoh, Yujii; Nanba, Kensuke; Adachi, Yoshiharu; Motohashi, Masataka; Tsukamoto, Arata

    2006-04-01

    We report that Cu substitution is effective in raising the degree of (001) crystal orientation of FePt grains prepared by rapid thermal annealing on SiO2. We fabricated coupled granular and continuous (CGC) like films such as TbFeCo on FePt grains. The wall coercivity was about twice that of the TbFeCo single layer film. From three-dimensional micromagnetic simulations with Landau-Lifshitz-Gilbert (LLG) equation, it was confirmed that wall coercivity was enhanced and domain shapes made smooth in CGC film. When the thickness of the TbFeCo layer was thin, wall width was thinner than the theoretical value.

  1. Imaging of electronic defect states in SiO2 and HfSiOx films with sub-nanometer spatial resolution by two-way Single Electron Tunneling Force Mircroscopy

    NASA Astrophysics Data System (ADS)

    Johnson, J. P.; Zheng, N.; Williams, C. C.

    2007-03-01

    Electronic defects in dielectric materials are currently in sharp focus, for nano-technology and quantum information processing. A novel technique has been developed for imaging these states with sub-nanometer spatial resolution. It can be applied to completely non-conducting dielectric films, in contrast to the STM. The method is based on force detected single electron tunneling events to and from the defect states [1-3]. The exponential dependence of the tunneling rate on tip-sample gap provides the same spatial resolution as STM. An oscillating AFM tip is scanned at constant height above the sample surface. A voltage waveform, synchronous with the tip motion is applied. When the tip is above an accessible state, individual electrons shuttle between tip and state with the applied voltage (300 Hz). The two-way tunneling causes a detectable change in tip resonance. Images of SiO2 and HfSiOx films show a repeatable, random array of individual ``point-like'' defect states, some with sub-nanometer width. Spectroscopic measurements of the defect energy are also performed by this approach. The new method and an analysis of the defects in SiO2 and HfSiOx will be presented. [1] E Bussman et al., Appl. Phys. Lett. 85, 2538 (2004) [2] E Bussman and CC Williams, Appl. Phys. Lett. 88, 263108 (2006) [3] E Bussman et al., Nano Lett. 6, 2577 (2006)

  2. Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode

    NASA Astrophysics Data System (ADS)

    Satyalakshmi, K. M.; Varma, K. B. R.; Hegde, M. S.

    1995-07-01

    Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450 °C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450 °C on LNO/LAO and LNO/SiO2/Si were 2.5 μC/cm2, 37 kV/cm and 4.6μC/cm2, 93 kV/cm, respectively.

  3. Influence of SiO2/In2O3 film acoustical waveguide on the mode index of Ti:LiNbO3 optical waveguide in acousto-optical mode converter

    NASA Astrophysics Data System (ADS)

    Lin, Hang-you; Ning, Ji-ping; Geng, Fan

    2004-04-01

    TE/TM mode converter is a key element of integrated acoustooptical tunable filter (AOTF). Employing SiO2/In2O3 film as acoustical waveguide can suppress sidelobes effectively and simplify fabrication technique in integrated quasi-collinear AOTF. In this report, the eigenvalue equation and the field solution of such configuration has been obtained by using modified Wenzel-Kramers-Brillouin (WKB) method. The results are compared with those by using vector finite element method (VFEM). When the optical waveguides are covered by such oxide film, the difference of mode indices of both polarizations and the effective propagation velocity of surface acoustical wave (SAW) will decrease, and these decreases lead the shift of optical wavelength, which mainly results in the change of the former.

  4. Study on the laser-induced damage performance of HfO2, Sc2O3, Y2O3, Al2O3 and SiO2 monolayer coatings

    NASA Astrophysics Data System (ADS)

    Zhu, Meiping; Yi, Kui; Li, Dawei; Qi, Hongji; Zhao, Yuanan; Liu, Jie; Liu, Xiaofeng; Hu, Guohang; Shao, Jianda

    2013-11-01

    The laser induced damage threshold (LIDT) and damage morphology of the monolayer coating are easily influenced by the finish condition of the substrate, which makes it difficult to compare the LIDT of different coating materials. In order to eliminate the influence of defect and sub-defect on the substrate, HfO2, Sc2O3, Y2O3, Al2O3 and SiO2 monolayer coatings were prepared on 1064 nm HfO2/SiO2 high reflection coatings, using conventional e-beam deposition. The LIDT, as well as the damage morphology after laser irradiation at wavelength of 1064 nm, was measured and compared with that of the monolayer coating deposited on BK7 glass substrate.

  5. Preparation and Characterization of SnO2-Nanoparticle-Included Ink Solution and Its Application to the Patterned Pt Films on SiO2/Si Substrates.

    PubMed

    Lee, Su Yeon; Lee, Ho Nyun; Kim, Hyun Jong; Lee, Seong Eui; Lee, Hee Chul

    2015-11-01

    Pure SnO2 nanoparticles with a single tetragonal phase were fabricated and characterized for use as ink solution. It was possible to obtain the SnO2 nanoparticles through the calcination process of SnC204 powders prepared by a hydrothermal reaction of an aqueous solution containing SnCl2 x 2H2O and H2C2O4. The SnO2 powder, synthesized at 600 degrees C, showed a single tetragonal phase, while the powders synthesized at 550 degrees C or lower were composed of a mixture of tetragonal and orthorhombic phases. The particle size of the SnO2 powder with single tetragonal phase was as small as 100 nm and its surface specific area was 12.31 m2/g. It was possible to fabricate the SnO2-nanoparticle-included ink solution for nanoparticle printing by adding a small amount of the previously prepared SnO2 powder to an aqueous solution of glycerol. The region of SnO2 nanoparticles formed by dropping the ink solution was able to successfully fill the gaps between Pt electrodes patterned on SiO2/Si substrates; the range of the gap between the electrodes was from 10 to 100 μm. PMID:26726540

  6. The properties of SiO 2 films using direct photo-chemical vapor deposition on strained SiGe layers

    NASA Astrophysics Data System (ADS)

    Lin, C. T.; Chang, S. J.; Nayak, D. K.; Shiraki, Y.

    1996-02-01

    Low temperature silicon-dioxide (SiO 2) layers were deposited on strained SiGe by using direct photo-chemical vapor deposition (DPCVD) with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. The capacitance-voltage ( C- V) measurements show that the flat-band voltage is about -1.1 V with an effective oxide charge of about 7 × 10 10 cm -2 and interface trap density of 3 × 10 11 cm -2 eV -1. At room temperature, the leakage current is about 3 × 10 -9 A/cm 2 under a 2 × 10 6 V/cm electric field. The breakdown field can reach over 16 MV/cm at 1 μA/cm 2 for these SiGe metal-oxide semiconductor (MOS) diodes.

  7. Width determination of SiO2-films in Si-based devices using low-loss EFTEM: image contrast as a function of sample thickness.

    PubMed

    Schaffer, Bernhard; Grogger, Werner; Hofer, Ferdinand

    2003-01-01

    Energy filtering transmission electron microscopy (EFTEM) has become one of the most efficient tools for specimen characterization at nanometer length scales. EFTEM imaging is most often carried out in the core-loss region but image intensity becomes more and more a limiting factor with decreasing feature size. Alternatively, it is possible to record EFTEM images in the low-loss region, where intensities are essentially higher and where in many cases the images contain material specific contrasts. In this paper we investigate the influence of the important parameters on the material contrast between silicon and silicon dioxide, e.g. specimen thickness, specimen orientation, energy-loss and energy selecting slit width. We show that sample thickness plays an important role and present two methods to calculate material contrast as a function of energy-loss and sample thicknesses. The first method uses spectra taken from both materials at different sample thickness by electron energy-loss spectroscopy, the second calculates contrast directly from a series of energy filtered images. From the results we determine the ideal acquisition parameters for the Si/SiO(2) system and demonstrate imaging at sufficient resolution below 2nm with a test sample of thin SiO(2) layers on Si. PMID:12694852

  8. Damage Thresholds and Morphology of the Front- and Back-Irradiated SiO2 Thin Films Containing Gold Nanoparticles as Artificial Absorbing Defects

    SciTech Connect

    Papernov, S.; Schmid, A.W.; Oliver, J.B.; Rigatti, A.L.

    2008-01-30

    Previous ultraviolet-pulsed, laser-damage studies using model thin films with gold nanoparticles as artificial absorbing defects revealed damage morphology in a form of submicrometer-scaled craters. It was also demonstrated that for defects smaller than 20 nm, crater formation is preceded by plasma-ball formation around absorbing defects. In this work an attempt is made to verify symmetry of the plasma ball by conducting film irradiation from the side of the air/film or substrate/film interfaces. In each case, crater-formation thresholds are derived and crater morphology is analyzed by means of atomic force microscopy.

  9. Abrasion-resistant solgel antireflective films with a high laser-induced damage threshold for inertial confinement fusion

    NASA Astrophysics Data System (ADS)

    Xu, Yao; Zhang, Lei; Wu, Dong; Sun, Yu Han; Huang, Zu Xing; Jiang, Xiao Dong; Wei, Xiao Feng; Li, Zhi Hong; Dong, Bao Zhong; Wu, Zhong Hua

    2005-09-01

    To prepare abrasion-resistant antireflective (AR) films for inertial confinement fusion, four solgel routes have been investigated on polysiloxane-modified and polyvinylalcohol- (PVA-) modified SiO2 sols. As confirmed with a transmissive electron microscope, different fractal structure characteristics of the modified SiO2 particles are disclosed by small-angle x-ray scattering technology. And it is these special fractal characteristics that determine the performance of AR films on the level of internal microstructure. A 29Si magic angle spinning and nuclear magnetic resonance study has been successfully applied in explaining the fractal microstructure and its relation to the laser-induced damage threshold (LIDT) of AR films. The films modified by PVA120000 or acetic acid-catalyzed polysiloxane have higher LIDTs than those films modified by PVA16000 or hydrochloride acid-catalyzed polysiloxane. The films from PVA-modified SiO2 sols have a stronger abrasion resistance but lower antireflection than those films from polysiloxane-modified SiO2 sols. In addition, the films from polysiloxane-modified SiO2 sols can possess high transmittance and high LIDT if the polysiloxane synthesis condition is appropriately chosen, but the abrasion resistance is not as good as that from PVA modification. If strong abrasion resistance is necessary, a possible resolution may be to choose a more appropriate hydrophilic polymer than PVA. If not, polysiloxane-modified silica sol can also work when polysiloxane is synthesized under acetic acid catalysis.

  10. Growth and structure of water on SiO2 films on Si investigated byKelvin probe microscopy and in situ X-ray Spectroscopies

    SciTech Connect

    Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H.; Salmeron, M.

    2007-06-14

    The growth of water on thin SiO{sub 2} films on Si wafers at vapor pressures between 1.5 and 4 torr and temperatures between -10 and 21 C has been studied in situ using Kelvin Probe Microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH) water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near 100%. The O K-edge near-edge X-ray absorption spectrum around 75% RH is similar to that of liquid water (imperfect H-bonding coordination) at temperatures above 0 C and ice-like below 0 C.

  11. Effect of power on interface and electrical properties of SiO2 films produced by plasma-enhanced chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Landheer, D.; Xu, D.-X.; Tao, Y.; Sproule, G. I.

    1995-02-01

    The effect of power on the electrical and interface properties of silicon dioxide films produced by direct plasma-enhanced chemical-vapor deposition, using nitrous oxide and silane with high helium dilution, has been investigated. Auger depth profiling measurements indicate that while the bulk of the films have no measurable impurities, the interface region contains about 1.6 x 10(exp 15) atoms/sq cm of nitrogen. In contrast to thermal oxides, there is no thick interface layer with a large intrinsic compressive stress. The interface-state densities of the films obtained from capacitance-voltage measurements on metal-oxide-semiconductor diodes increase with increasing plasma power, but these can be removed to some extent by high-temperature annealing at temperatures in the range 800-950 C. The flatband voltage is relatively insensitive to plasma power. Thermal oxide samples have been subjected to the plasma processes and these also show evidence of plasma damage. A thin layer produced at the interface by a separate plasma oxynitridation process is shown to be incapable of protecting the Si/SiO2 interface from the plasma damage produced by subsequent high-power plasma deposition processes. The nature of the interface states is discussed.

  12. Shear strength of metal - SiO2 contacts

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1978-01-01

    The strength of the bond between metals and SiO2 was studied by measuring the static coefficient of friction of metals contacting alpha-quartz in ultrahigh vacuum. It was found that copper with either chemisorbed oxygen, nitrogen, or sulphur exhibited higher contact strength on stoichiometric SiO2 than did clean copper. Since the surface density of states induced by these species on copper is similar, it appears that the strength of the interfacial bond can be related to the density of states on the metal surface.

  13. Shear strength of metal - SiO2 contacts

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1978-01-01

    The strength of the bond between metals and SiO2 is studied by measuring the static coefficient of friction of metals contacting alpha-quartz in ultrahigh vacuum. It was found that copper with either chemisorbed oxygen, nitrogen or sulphur exhibited higher contact strength on stoichiometric SiO2 than did clean copper. Since the surface density of states induced by these species on copper is similar, it appears that the strength of the interfacial bond can be related to the density of states on the metal surface.

  14. Localized corrosion of 316L stainless steel with SiO2-CaO films obtained by means of sol-gel treatment.

    PubMed

    Vallet-Regí, M; Izquierdo-Barba, I; Gil, F J

    2003-11-01

    Sol-gel films on austenitic stainless steel (AISI 316L) polished wafer were prepared from sono-sols obtained from tetraethylorthosilane and hydrated calcium nitrate. However, pitting was observed in different places on the stainless steel surfaces. The corrosion resistance was evaluated by the polarization resistance in simulated body fluid environment at 37 degrees C. The critical current density, the passive current density, the corrosion potential, and the critical pitting potential were studied. The austenitic stainless steel 316L treated presents important electrochemical corrosion and consequently its application as endosseous implants is not possible. PMID:14566812

  15. 3D micro- and nano-machining of hydrogenated amorphous silicon films on SiO2/Si and glass substrates

    NASA Astrophysics Data System (ADS)

    Soleimani-Amiri, S.; Zanganeh, S.; Ramzani, R.; Talei, R.; Mohajerzadeh, S.; Azimi, S.; Sanaee, Z.

    2015-07-01

    We report on the hydrogen-assisted deep reactive ion etching of hydrogenated amorphous silicon (a-Si:H) films deposited using radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). High aspect-ratio vertical and 3D amorphous silicon features, with the desired control over the shaping of the sidewalls, in micro and nano scales, were fabricated in ordered arrays. The suitable adhesion of amorphous Si film to the underlayer allows one to apply deep micro- and nano-machining to these layers. By means of a second deposition of amorphous silicon on highly curved 3D structures and subsequent etching, the fabrication of amorphous silicon rings is feasible. In addition to photolithography, nanosphere colloidal lithography and electron beam lithography were exploited to realize ultra-small features of amorphous silicon. We have also investigated the optical properties of fabricated hexagonally patterned a-Si nanowire arrays on glass substrates and demonstrated their high potential as active layers for solar cells. This etching process presents an inexpensive method for the formation of highly featured arrays of vertical and 3D amorphous silicon rods on both glass and silicon substrates, suitable for large-area applications.

  16. Highly Reliable Liquid-Phase-Deposited SiO2 with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Yeh, Ching-Fa; Chen, Darren Chi-Hsiang; Lu, Cheng-Yu; Liu, Chung; Lee, Su-Tseng; Liu, Cheng-Hong; Chen, Tai-Ju

    2002-10-01

    Low-temperature (˜300°C) N2O-plasma post-treatment for liquid-phase-deposited (LPD) gate oxide has been proposed for the first time. This treatment successfully takes the place of conventional furnace annealing in O2 ambient. Results of physicochemical and electrical characteristics show that N2O-plasma post-treated LPD-SiO2 has a high electrical breakdown field and low interface state density. In addition, N2O-plasma treatment also improves the Si-rich phenomenon of LPD-SiO2. From the comparison with pure N2O-plasma oxidation film, LPD-SiO2 with its short re-oxidation time in N2O plasma plays an important role in relieving interfacial stress. Finally, the novel technology is applied to the gate oxide of low-temperature-processed (LTP) polysilicon thin film transistors (poly-Si TFTs). The device performance reveals excellent electrical characteristics, and the reliability shows a satisfactory result, as well as the gate oxide reliability. It is believed that the N2O-plasma post-treatment not only improves the oxide quality, but also effectively passivates the trap states of poly-Si TFTs.

  17. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  18. Reflectance, Solar Absorptivity, and Thermal Emissivity of SiO(2)-Coated Aluminum.

    PubMed

    Hass, G; Ramsey, J B; Heaney, J B; Triolo, J J

    1969-02-01

    The reflectance, solar absorptivity (alpha), and the total normal and hemispherical emissivity (epsilonNu and epsilon) of evaporated aluminum coated with SiO(2) films of various thicknesses were determined. High vacuum evaporation with an electron gun was used for preparing uv transparent undecomposed films of SiO(2) up to thicknesses of more than 3.5 micro Because of their hardness, chemical stability, and excellent adherence, evaporated SiO(2) films were found to be very suitable as protective layers for aluminum front surface mirrors, especially if high reflectance in the uv is required. alpha of SiO(2)-coated Al was determined to be about 11 % and to be essentially independent of the SiO(2) thickness, whereas epsilonNu and epsilon increased with increasing oxide thickness, and reached values of 0.62 and 0.55, respectively, for a SiO(2) thickness of 3.75 micro. Films of this type are, therefore, suitable as surface layers for controlling the temperature of satellites in orbit. Ultraviolet irradiation in vacuum at one and five times the equivalent solar energy decreased the uv and visible reflectance of SiO(2)-coated Al. The effect of this reflectance decrease on alpha/epsilon and on the temperature of an orbiting satellite is discussed. PMID:20072214

  19. SAW-grade SiO2 for advanced microfluidic devices

    NASA Astrophysics Data System (ADS)

    Winkler, Andreas; Menzel, Siegfried; Schmidt, Hagen

    2009-05-01

    Acoustoelectronic devices based on surface acoustic wave (SAW) technology are primarily used in radio frequency filters, delay lines, duplexers, amplifiers and RFID tags. Thereby, SAW's are excited at the surface of piezoelectric materials (e.g. Quartz, LiTaO3, LiNbO3) by an RF signal applied via interdigital transducers (IDTs)1. Novel SAW applications that emerged recently in the field of microfluidics such as the handling of minimum quantities of fluids or gases2,3 require a fluid compatible design approach, high power durability and long lifetime of the devices. However, conventional SAW devices with finger electrodes arranged on top of the chip surface experience acoustomigration damage4,5 at high power input and/or higher operating temperature leading to failure of the device. Additionally, inappropriate material systems or chip surface topography can limit their performance in microfluidic application. To overcome these limitations the electrodes can be buried in an acoustically suited ("SAW-grade") functional layer which moreover should be adjustable to the specific biotechnological task. Depending on the properties of this layer, it can suppress the acoustomigration impact6 and improve the power durability of the device. Also, a reduction of the thermally-induced frequency shift is possible7. The present paper describes a novel SAW based chip technology approach using a modular concept. Here, the electrodes are buried in surface polished SAW-grade SiO2 fabricated by means of reactive RF magnetron sputtering from a SiO2- target. This approach will be demonstrated for two different metallization systems based on Al or Cu thin films on 128° YX-LiNbO3 substrates. We also show the application of the SiO2-layer with respect to compensation of thermallyinduced frequency shift and bio /chemical surface modification. Investigations were carried out using atomic force microscopy, laser-pulse acoustic measurement, glow-discharge optical emission spectroscopy

  20. Study of O3-TEOS SiO2 Cladding for Silicon Photonics Devices

    NASA Astrophysics Data System (ADS)

    Kinoshita, Keizo; Horikawa, Tsuyoshi; Shimura, Daisuke; Takahashi, Hiroyuki; Mogami, Tohru

    2015-09-01

    Silicon Photonics (SiPh) is a promising technology for large-capacity and wide-band data communications for the distance from millimeter to 100 meters which corresponded well to data center applications. This paper describes about O3-TEOS SiO2 film developments as an upper cladding over Si waveguide core fabricated on silicon-on-insulator wafers. It was compared with a plasma-enhanced chemical-vapor-deposition (PE-CVD) SiO2 film used widely as the cladding material. The O3-TEOS SiO2 showed very high gap-fill characteristic at parallel arrangement of two waveguides. However, its propagation loss was 1.83 dB/cm which is three times larger than that of the conventional PE-CVD SiO2 cladding. Chemical analyses by FT-IR and TDS for these two types of cladding films were carried out to clarify this reason. It was clearly shown that remained water within the O3-TEOS SiO2 cladding could cause the larger propagation loss by O-H stretching absorption. The water exclusion procedure should be developed to apply O3-TEOS SiO2 for the cladding materials. This work was supported by NEDO.

  1. In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

    DOE PAGESBeta

    Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

    2015-12-17

    Real-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E=0.5 MeV/amu), scintillation materials of a-SiO2, crystalline quartz, and Al2O3 are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offersmore » higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. Lastly, the usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.« less

  2. Shock induced reaction in Chicxulub target materials (CaSO4 and SiO2) and their relation to extinctions

    NASA Technical Reports Server (NTRS)

    Chen, Guangqing; Ahrens, Thomas J.

    1993-01-01

    The global platinum element rich layer, the presence of shocked quartz grains (in some cases with stishovite), and the observation of a tektite-rich layer, precisely at the K-T boundary, are the three major arguments for the extinction bolide impact hypothesis of Alvarez et al. Tektites (spherules) from Beloc in Haiti and Mimbral in Mexico received particular interest because of their geological proximity to the Chicxulub impact structure, which is a leading candidate for at least one of the K-T impact craters. Although in most localities the original glass has weathered to clay minerals, some shock-induced glass is found in outcrops and drill cores which is used for Ar-38/Ar-39 dating. The glassy tektites were found to be chemically similar and coeval at 65.0 Ma with Chicxulub melt rock. Two kinds of K-T spherules were discovered: (1) a silic black glass; and (2) a yellow glass, enriched in Ca, Mg, and S. The high sulfur content of the glass and the abundance of anhydrite (CaSO4) in the carbonate-evaporite sequence observed in Drill Holes Y-1 and Y-2 at Chicxulub prompted studies of calcium sulfate devolatization. Further discussion of our experiments is presented.

  3. Light Induced Water Oxidation on Cobalt-Phosphate (Co-Pi) Catalyst Modified Semi-Transparent, Porous SiO2-BiVO4 Electrodes

    SciTech Connect

    Pilli, S. K.; Deutsch, T. G.; Furtak, T. E.; Turner, J. A.; Brown, L. D.; Herring, A. M.

    2012-04-21

    A facile and simple procedure for the synthesis of semi-transparent and porous SiO{sub 2}-BiVO{sub 4} electrodes is reported. The method involves a surfactant assisted metal-organic decomposition at 500 C. An earth abundant oxygen evolution catalyst (OEC), cobalt phosphate (Co-Pi), has been used to modify the SiO{sub 2}-BiVO{sub 4} electrode by electrodeposition (ED) and photoassisted electrodeposition (PED) methods. Modified electrodes by these two methods have been examined for light induced water oxidation and compared to the unmodified SiO{sub 2}-BiVO{sub 4} electrodes by various photoelectrochemical techniques. The PED method was a more effective method of OEC preparation than the ED method as evidenced by an increased photocurrent magnitude during photocurrent-potential (I-V) characterizations. Electrode surfaces catalyzed by PED exhibited a very large cathodic shift (420 mV) in the onset potential for water oxidation. The chopped-light I-V measurements performed at different intervals over 24-hour extended testing under illumination and applied bias conditions show a fair photostability for PED Co-Pi modified SiO{sub 2}-BiVO{sub 4}.

  4. Temperature-Dependent Cathodoluminescence of Disordered SiO2 Layers

    NASA Astrophysics Data System (ADS)

    Jensen, Amberly; Dennison, J. R.; Wilson, Gregory; Dekany, Justin

    2013-03-01

    Optical coatings of disordered thin film SiO2/SiOx dielectric samples on reflective metal substrates exhibited electron-induced luminescence (cathodoluminescence) under electron beam irradiation. These experiments provided measurements of the absolute radiance and emission spectra as functions of incident electron energy, flux and power over a range of sample temperatures (<40 K to >300 K). The overall luminescent intensity increased linearly with increasing power, plateaued, then fell off approximately exponentially. Spectrometer data revealed four spectral bands. The structural defects associated with three of the four bands have been identified. Temperature dependence of the peak intensity and central position differs for the lower and higher energy bands. These results are interpreted with a model of the band structure of highly disordered trapped states within the band gap of SiO2, used to describe the excitation of electrons from the valence band to the conduction band and subsequent relaxation into trapped states. The cathodoluminescence model describes these experimental observations, providing a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time and accumulated charge, incident flux and energy, and sample thickness and temperature. This work was supported by funds from NASA Goddard Space Flight Center, a NASA Space Technology Graduate Research Fellowship, and NRC Senior Research Fellowship at AFRL.

  5. Electronic sputtering of vitreous SiO2: Experimental and modeling results

    NASA Astrophysics Data System (ADS)

    Toulemonde, M.; Assmann, W.; Trautmann, C.

    2016-07-01

    The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.

  6. The study on SiO2 pattern fabrication using Ge1.5Sn0.5Sb2Te5 as resists.

    PubMed

    Xi, Hongzhu; Liu, Qian; Tian, Ye; Guo, Shengming; Cu, Maoyou; Zhang, Gengmin

    2013-02-01

    Ge1.5Sn0.5Sb2Te5 (GSST) can be easily induced to phase transition from amorphous state to crystalline state by a laser direct writing (LDW) system. The results show that the crystalline phase of GSST is more durable against acid solution corrosion than the amorphous phase. So nano-scale patterns and structures can be formed on the GSST film resists using laser-induced phase change and wet etching. Moreover, reactive ion etching (RIE) technology was applied to transfer these patterns onto the SiO2 substrate. The result shows to the extent that GSST material has thermal resist characteristics with high resolution and well etching selectivity to SiO2 when etched in the CHF3, which is compatibility with the future nanofabricate processing. PMID:23646524

  7. Long-pulse laser-induced damage in an optical anti-reflective film: II. Experimental research

    NASA Astrophysics Data System (ADS)

    Li, Changli; Ma, Yao; Wang, Di; Wang, Zhiyang; Zhang, Xihe; Liu, Haiming

    2014-12-01

    In order to verify the result of theoretical analysis about long-pulse flat-topped multi-Gaussian laser-induced damage in an optical anti-reflection film with HfO2/SiO2 composite film coating on a BK7 substrate (BK7:HfO2/SiO2), an experimental system was built, which carried out the experiment and analysis, focusing on the pulse-length 1.0 ms, flat-topped laser-induced damage. The result shows that the thermal effect is the main reason for damage under the long-pulse flat-topped laser. Moreover, the stripping and shedding occur because of the heating stress of the film happening at an early stage of the laser irradiation. However, the crack happens at laser irradiation termination. The correctness of the theoretical analysis results is verified.

  8. CoCrPt -SiO2 granular-type longitudinal media on Ru underlayer for sputtered tape applications

    NASA Astrophysics Data System (ADS)

    Lee, Hwan-Soo; Zhu, Jian-Gang; Laughlin, David E.

    2008-04-01

    CoCrPt -SiO2 films for use as thin film tape media have been investigated. Bias sputtering and high Ar pressure were utilized to achieve desirable media properties (good in-plane orientation and enhanced grain decoupling) in these media. The in-plane orientation of the bias sputtered CoCrPt -SiO2 magnetic layer was well maintained even at a high content of SiO2 as Ru was used as an underlayer and deposited at high Ar pressure. Films of (10.0) textured CoCrPt -SiO2 on a Ru underlayer showed a large in-plane coercivity of 4000Oe and transmission electron microscopy revealed an average grain size of about 10nm, well decoupled by the oxide. The in-plane coercivity was a strong function of the Ru thickness.

  9. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  10. Optical properties of self-assembled TiO2-SiO2 double-layered photonic crystals.

    PubMed

    Oh, Yong Taeg; Koo, Bo Ra; Shin, Dong Chan

    2013-01-01

    The optical properties of self-assembled TiO2/SiO2 double-layered photonic crystals were examined using SiO2 and TiO2 nanopowders. The SiO2 and TiO2 nanopowders were fabricated using the well-known Stöber process, and the double-layered structure was self-assembled by an evaporation method. Self-assembled TiO2 thin film was coated at a 1.2 mm thickness by the evaporation process, and 3 atomic layers of the SiO2 layer was coated onto the TiO2 thin film. The relative reflectance peak intensity of the photonic bandgap in the specimen was 13% before thermal treatment. The peak value was increased by sequential heat-treatments and reached the highest value of 21% at 400 degrees C. PMID:23646797

  11. Mass spectrometric studies of SiO2 deposition in an indirect plasma enhanced LPCVD system

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Lile, D. L.; Mcconica, C. M.

    1993-01-01

    Reaction pathways for the low temperature deposition of SiO2 from silane and indirect plasma-excited oxygen-nitrogen mixtures are proposed based on experimental evidence gained from mass spectrometry in an indirect plasma enhanced chemical vapor deposition chamber. It was observed that about 80-85 percent of the silane was oxidized to byproduct hydrogen and only about 15-20 percent to water. Such conversion levels have led us to interpret that silanol (SiH3OH) could be the precursor for SiO2 film deposition, rather than siloxane /(SiH3)2O/ which has generally been cited in the literature. From mass spectrometry, we have also shown the effects of the plasma, and of mixing small amounts of N2 with the oxygen flow, in increasing the deposition rate of SiO2. Free radical reaction of nitric oxide, synthesized from the reaction of oxygen and nitrogen in the plasma chamber, and an *ncrease in atomic oxygen concentration, are believed to be the reasons for these SiO2 deposition rate increases. Through mass spectrometry we have, in addition, been able to identify products, presumably originating from terminating reactions, among a sequence of chemical reactions proposed for the deposition of SiO2.

  12. Investigation of laser induced damage threshold measurement with single-shot on thin films

    NASA Astrophysics Data System (ADS)

    Liu, Zhichao; Zheng, Yi; Pan, Feng; Lin, Qi; Ma, Ping; Wang, Jian

    2016-09-01

    A method for rapid determination of laser induced damage threshold (LIDT) of optical coatings is proposed and investigated in this paper. By use of this method, the LIDT of thin film can be rapidly obtained by only one shot. The modulation of laser beam profile, which is considered as a negative factor in conventional LIDT test, is utilized in this method. Basing on image processing technique, the damage information could be extracted from the comparison between the damage pattern and beam intensity distribution in the test region. The applicability and repeatability of this testing method has been verified on three type reflectors, HfO2/SiO2, HfO2/Al2O3 and Ta2O5/SiO2. In addition, the experimental results showed that appropriate beam size, laser energy and image compression ratio are the key factors to ensure a high accuracy of LIDT.

  13. Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

    PubMed

    Lee, Jeong-Hoon; Song, Kwan-Woo; Park, Min-Ho; Kim, Hyung-Kyu; Yang, Cheol-Woong

    2011-07-01

    Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film. PMID:22121737

  14. Effects of CO 2 laser conditioning of the antireflection Y 2O 3/SiO 2 coatings at 351 nm

    NASA Astrophysics Data System (ADS)

    Wei, Chaoyang; He, Hongbo; Shao, Jianda; Wang, Tao; Zhang, Dongping; Fan, Zhengxiu

    2005-08-01

    Y 2O 3/SiO 2 coatings were deposited on fused silica by electron beam evaporation. A continuous wave CO 2 laser was used to condition parts of the prepared samples at different scanning speeds in the air. LAMBDA 900 spectrometer was used to investigate the changes of the transmittance and residual reflection spectrum. A Nomarski microscope under dark field was used to examine the changes of the micro defect density. The changes of the surface roughness and the microstructure of the film before and after conditioning were investigated by AFM and X-ray diffraction, respectively. We found that laser-induced damage threshold (LIDT) of the films conditioning at 30 mm/s scanning speed was increased by more than a factor of 3 over the thresholds of the as-deposited films. The conditioning effect was correlated with an irradiation-induced decrease of the defect density and absorption of the films.

  15. Antioxidant and antiradical SiO2 nanoparticles covalently functionalized with gallic acid.

    PubMed

    Deligiannakis, Yiannis; Sotiriou, Georgios A; Pratsinis, Sotiris E

    2012-12-01

    Gallic acid (GA) and its derivatives are natural polyphenolic substances widely used as antioxidants in nutrients, medicine and polymers. Here, nanoantioxidant materials are engineered by covalently grafting GA on SiO(2) nanoparticles (NPs). A proof-of-concept is provided herein, using four types of well-characterized SiO(2) NPs of specific surface area (SSA) 96-352 m(2)/g. All such hybrid SiO(2)-GA NPs had the same surface density of GA molecules (~1 GA per nm(2)). The radical-scavenging capacity (RSC) of the SiO(2)-GA NPs was quantified in comparison with pure GA based on the 2,2-diphenyl-1-picrylhydrazyl (DPPH(•)) radical method, using electron paramagnetic resonance (EPR) and UV-vis spectroscopy. The scavenging of DPPH radicals by these nanoantioxidant SiO(2)-GA NPs showed mixed-phase kinetics: An initial fast-phase (t(1/2) <1 min) corresponding to a H-Atom Transfer (HAT) mechanism, followed by a slow-phase attributed to secondary radical-radical reactions. The slow-reactions resulted in radical-induced NP agglomeration, that was more prominent for high-SSA NPs. After their interaction with DPPH radicals, the nanoantioxidant particles can be reused by simple washing with no impairment of their RSC. PMID:23121088

  16. Interface modification of MoS2/SiO2 leading to conversion of conduction type of MoS2

    NASA Astrophysics Data System (ADS)

    Lin, Yow-Jon; Su, Ting-Hong

    2016-11-01

    Few-layer MoS2 prepared by the chemical vapor deposition method is deposited on SiO2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS2. The MoS2 thin film deposited on a SiO2 substrate with sulfide treatment shows n-type behavior, whereas the MoS2 thin film deposited on a SiO2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Sisbnd O bonds and the formation of Sisbnd S bonds at the SiO2 surface that results in the removal of oxygen dangling bonds and a change in the MoS2sbnd SiO2 interaction.

  17. Undetactable levels of genotoxicity of SiO2 nanoparticles in in vitro and in vivo tests

    PubMed Central

    Kwon, Jee Young; Kim, Hye Lim; Lee, Jong Yun; Ju, Yo Han; Kim, Ji Soo; Kang, Seung Hun; Kim, Yu-Ri; Lee, Jong-Kwon; Jeong, Jayoung; Kim, Meyoung-Kon; Maeng, Eun Ho; Seo, Young Rok

    2014-01-01

    Background Silica dioxide (SiO2) has been used in various industrial products, including paints and coatings, plastics, synthetic rubbers, and adhesives. Several studies have investigated the genotoxic effects of SiO2; however, the results remain controversial due to variations in the evaluation methods applied in determining its physicochemical properties. Thus, well characterized chemicals and standardized methods are needed for better assessment of the genotoxicity of nanoparticles. Methods The genotoxicity of SiO2 was evaluated using two types of well characterized SiO2, ie, 20 nm (−) charge (SiO EN20(−)2) and 100 nm (−) charge (SiO EN100(−)2). Four end point genotoxicity tests, ie, the bacterial mutation assay, in vitro chromosomal aberration test, in vivo comet assay, and in vivo micronucleus test, were conducted following the test guidelines of the Organization for Economic Cooperation and Development (OECD) with application of Good Laboratory Practice. Results No statistically significant differences were found in the bacterial mutation assay, in vitro chromosomal aberration test, in vivo comet assay, and in vivo micronucleus test when tested for induction of genotoxicity in both two types of SiO2 nanoparticles. Conclusion These results suggest that SiO2 nanoparticles, in particular SiO2EN20(−) and SiO2EN100(−), are not genotoxic in both in vitro and in vivo systems under OECD guidelines. Further, the results were generated in accordance with OECD test guidelines, and Good Laboratory Practice application; it can be accepted as reliable information regarding SiO2-induced genotoxicity. PMID:25565835

  18. Reversible control of magnetic domains in a Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3 thin film heterostructure deposited on Pt/TiO2/SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    More-Chevalier, J.; Ferri, A.; Cibert, C.; Poullain, G.; Desfeux, R.; Bouregba, R.

    2014-06-01

    Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3 (Terfenol-D/Pt/PZT) magnetoelectric (ME) thin films were deposited on Pt/TiO2/SiO2/Si substrate. Ferroelectric and magnetic properties were characterized at room temperature. At zero dc magnetic field and out of mechanical resonance, a variation of the voltage across the ferroelectric film was obtained when a small external ac magnetic field was applied to the device. The corresponding ME voltage coefficient was 1.27 V/cm Oe. On the same sample, local magnetic domain patterns were imaged by magnetic force microscopy. Reversible changes in magnetic domain patterns were observed when a dc electric field of 120 to 360 kV/cm was applied to the ferroelectric layer. These results confirm that both magnetic control of ferroelectric polarization and electric control of magnetization are achievable on ME thin films devices deposited on silicon substrates.

  19. Structural, ferroelectric and optical properties of Bi2VO5.5 thin films deposited on platinized silicon {(100) Pt/TiO2/SiO2/Si} substrates

    NASA Astrophysics Data System (ADS)

    Kumari, N.; Krupanidhi, S. B.; Varma, K. B. R.

    2008-06-01

    Bismuth vanadate (Bi2VO5.5, BVO) thin films have been deposited by a pulsed laser ablation technique on platinized silicon substrates. The surface morphology of the BVO thin films has been studied by atomic force microscopy (AFM). The optical properties of the BVO thin films were investigated using spectroscopic ellipsometric measurements in the 300 820 nm wavelength range. The refractive index (n), extinction coefficient (k) and thickness of the BVO thin films have been obtained by fitting the ellipsometric experimental data in a four-phase model (air/BVOrough/BVO/Pt). The values of the optical constants n and k that were determined through multilayer analysis at 600 nm were 2.31 and 0.056, respectively. For fitting the ellipsometric data and to interpret the optical constants, the unknown dielectric function of the BVO films was constructed using a Lorentz model. The roughness of the films was modeled in the Brugmann effective medium approximation and the results were compared with the AFM observations.

  20. Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy.

    PubMed

    Zhang, Hai-Bo; Li, Wei-Qin; Wu, Dan-Wei

    2009-01-01

    We clarify the scanning electron microscopic contrast mechanism for imaging a buried SiO(2) trench microstructure with interface trapped charges by simulating both electron scattering and transport. Here, the interface trapped charges make the SiO(2) film more negatively charged and increase excess holes in the space charge distribution of the electron scattering region. The generated positive surface electric field thus redistributes some emitted secondary electrons and results in the dark contrast. This contrast mechanism is validated by comparing with experiments, and it may also provide an interesting approach for imaging and detecting deep interface trapped charges in insulating films. PMID:19029106

  1. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  2. Local diffusion induced roughening in cobalt phthalocyanine thin film growth.

    PubMed

    Gedda, Murali; Subbarao, Nimmakayala V V; Goswami, Dipak K

    2014-07-29

    We have studied the kinetic roughening in the growth of cobalt phthalocyanine (CoPc) thin films grown on SiO2/Si(001) surfaces as a function of the deposition time and the growth temperature using atomic force microscopy (AFM). We have observed that the growth exhibits the formation of irregular islands, which grow laterally as well as vertically with coverage of CoPc molecules, resulting rough film formation. Our analysis further disclosed that such formation is due to an instability in the growth induced by local diffusion of the molecules following an anomalous scaling behavior. The instability relates the (ln(t))(1/2), with t as deposition time, dependence of the local surface slope as described in nonequilibrium film growth. The roughening has been characterized by calculating different scaling exponents α, β, and 1/z determined from the height fluctuations obtained from AFM images. We obtained an average roughness exponent α = 0.78 ± 0.04. The interface width (W) increases following a power law as W ∼ t(β), with growth exponent β = 0.37 ± 0.05 and lateral correlation length (ξ) grows as ξ ∼ t(1/z) with dynamic exponent 1/z = 0.23 ± 0.06. The exponents revealed that the growth belongs to a different class of universality. PMID:24992503

  3. Studies on TiO2/SiO2 and Pd/TiO2/SiO2 Catalysts in Photoreduction of CO2 with H2O to Methanol

    NASA Astrophysics Data System (ADS)

    Zbudniewek, K.; Góralski, J.; Rynkowski, J.

    2012-12-01

    The development of industry induced a massive increase in the emission of carbon dioxide into the atmosphere. A large amount of CO2 and its general availability causes that it could be a cheap reactant in a reaction that runs in a way similar to photosynthesis in plants. Pure TiO2 and metal doped TiO2 are the most studied semiconductor catalysts for photoreduction of CO2. The TiO2/SiO2 and Pd/TiO2/SiO2 catalysts were prepared and studied by temperature-programmed desorption, X-ray diffraction analysis, SEM-EDS, temperature-programmed reduction and then used for the methanol synthesis. The photoactivity of Pd/TiO2/SiO2 catalysts in the reduction of CO2 with H2O was tested at room temperature using photoreactor equipped with 16 lamps. The wavelength was characteristic of near ultraviolet. Post-reaction products were identified with gas chromatograph equipped with the flame ionization detector. Pd doping made the catalysts photoactive and the photoactivity of catalysts was changing as follows: 1%Pd/5%TiO2/SiO2 > 1% Pd/10% TiO2/SiO2 > 1% Pd/15% TiO2/SiO2. Optimum ultraviolet radiation time in the photoreduction of CO2 to methanol was 7 h. An addition of Pd does not change the surface of the carrier.

  4. Fabrication of high performance thin-film transistors via pressure-induced nucleation

    PubMed Central

    Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

    2014-01-01

    We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm2/Vs. PMID:25358809

  5. Study of the kinetics and mechanism of the thermal nitridation of SiO2

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.

    1985-01-01

    X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiO(x)N(y)/Si interface is initially at the interface, but moves 20-25 A away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.

  6. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  7. CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask.

    PubMed

    Meng, Lingkuan; Gao, Jianfeng; He, Xiaobin; Li, Junjie; Wei, Yayi; Yan, Jiang

    2015-12-01

    We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including nanoline, nanotrench, and nanohole arrays. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. This behavior may be attributed to the presence of high concentration of dangling bonds in α-Si mask surface. By controlling the process condition, it is possible to achieve a desired vertical etched profile with a controlled size. Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable. The obtained SiO2 pattern can be further used as a nanotemplate to produce periodic or more complex silicon nanostructures. Moreover, this novel top-down approach is a potentially universal method that is fully compatible with the currently existing Si-based CMOS technologies. It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way. PMID:26306538

  8. XPS study of interface formation of CVD SiO2 on InSb

    NASA Astrophysics Data System (ADS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-10-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  9. A kinetic model for the thermal nitridation of SiO2/Si

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.

    1986-01-01

    To explain the observed nitrogen distributions in thermally nitridated SiO2 films, a kinetic model is proposed in which the nitridation process is simulated, using the first-order chemical kinetics and Arrhenius dependence of the diffusion and reaction rates on temperature. The calculations show that initially, as the substrate reacts with diffusing nitrogen, a nitrogen-rich oxynitride forms at the SiO2-Si interface, while at nitridation temperatures above 1000 C, an oxygen-rich oxynitride subsequently forms at the interface, due to reaction of the substrate with an increasingly concentrated oxygen displaced by the slower nitridation of the SiO2. This sequence of events results in a nitrogen distribution in which the peak of the interfacial nitrogen concentration occurs away from the interface. The results are compared with the observed nitrogen distribution. The calculated results have correctly predicted the positions of the interfacial nitrogen peaks at the temperatures of 800, 1000, and 1150 C. To account for the observed width of the interfacial nitrogen distribution, it was found necessary to include in the simulations the effect of interfacial strain.

  10. Application of mesoporous SiO2 layer as an insulating layer in high performance hole transport material free CH3NH3PbI3 perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Cheng, Nian; Liu, Pei; Bai, Sihang; Yu, Zhenhua; Liu, Wei; Guo, Shi-Shang; Zhao, Xing-Zhong

    2016-07-01

    A mesoporous SiO2 layer is successfully introduced into the hole transport material free perovskite solar cells by spin-coating a SiO2 paste onto the TiO2 scaffold layer. This SiO2 layer can act as an insulating layer and effectively inhibit the charge recombination between the TiO2 layer and carbon electrode. The variation of power conversion efficiencies with the thickness of SiO2 layer is studied here. Under optimized SiO2 thickness, perovskite solar cell fabricated on the TiO2/SiO2 film shows a superior power conversion efficiency of ∼12% and exhibits excellent long time stability for 30 days.

  11. Dilute magnetic semiconductors based on wide bandgap SiO 2 with and without transition metal elements

    NASA Astrophysics Data System (ADS)

    Dinh, Van An; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2005-10-01

    Material designs based on the first principle calculations of electronic structures are proposed for α-quartz SiO 2-based dilute magnetic semiconductors. The incorporation of transition metals (TMs) into Si sites and of the non-TM atoms into O sites are treated for various concentrations. At temperatures higher than room temperature, most of the TM-doped SiO 2 have no magnetism, yet Si 1- xMn xO 2 might achieve the ferromagnetism. The substitution of O by non-TM atoms as C or N also induces the magnetism in the host. However, while the N's substitution induces the ferromagnetism, C's substitution causes an anti-ferromagnetic behavior in the host material SiO 2.

  12. Highly transparent and efficient counter electrode using SiO2/PEDOT-PSS composite for bifacial dye-sensitized solar cells.

    PubMed

    Song, Dandan; Li, Meicheng; Li, Yingfeng; Zhao, Xing; Jiang, Bing; Jiang, Yongjian

    2014-05-28

    A highly transparent and efficient counter electrode was facilely fabricated using SiO2/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) inorganic/organic composite and used in bifacial dye-sensitized solar cells (DSCs). The optical properties of SiO2/PEDOT-PSS electrode can be tailored by the blending amount of SiO2 and film thickness, and the incorporation of SiO2 in PEDOT-PSS provides better transmission in the long wavelength range. Meanwhile, the SiO2/PEDOT-PSS counter electrode shows a better electrochemical catalytic activity than PEDOT-PSS electrode for triiodide reduction, and the role of SiO2 in the catalytic process is investigated. The bifacial DSC with SiO2/PEDOT-PSS counter electrode achieves a high power conversion efficiency (PCE) of 4.61% under rear-side irradiation, which is about 83% of that obtained under front-side irradiation. Furthermore, the PCE of bifacial DSC can be significantly increased by adding a reflector to achieve bifacial irradiation, which is 39% higher than that under conventional front-side irradiation. PMID:24802383

  13. Shock temperatures of SiO2 and their geophysical implications

    NASA Technical Reports Server (NTRS)

    Lyzenga, G. A.; Ahrens, T. J.; Mitchell, A. C.

    1983-01-01

    High pressure shock state temperatures of SiO2 were measured in specimens of single crystal alpha-quartz and fused quartz. Projectile impact and pyrometry techniques were employed to impart pressures in the 60-140 GPa range. Shock-induced phase transformations were observed near 70 and 50 GPa along the alpha- and fused-quartz Hugoniots. It is suggested that the transformation consists of melting of the shock-synthesized stishovite, with melting delayed by the superheating of the crystalline phase. Details of the stishovite-liquid phase boundaries have been determined, including stishovite melting at 4500 K under 70 GPa, with the melting accompanied by a relative volume change of about 2.7% and a latent heat of fusion of about 2.4 MJ/kg. At 100 GPa, an approximate limit of 3500 K for the melting of SiO2 is indicated for solid mantle mineral assemblages, such as the earth's mantle

  14. Formation of nucleoplasmic protein aggregates impairs nuclear function in response to SiO2 nanoparticles.

    PubMed

    Chen, Min; von Mikecz, Anna

    2005-04-15

    Despite of their exponentially growing use, little is known about cell biological effects of nanoparticles. Here, we report uptake of silica (SiO(2)) nanoparticles to the cell nucleus where they induce aberrant clusters of topoisomerase I (topo I) in the nucleoplasm that additionally contain signature proteins of nuclear domains, and protein aggregation such as ubiquitin, proteasomes, cellular glutamine repeat (polyQ) proteins, and huntingtin. Formation of intranuclear protein aggregates (1) inhibits replication, transcription, and cell proliferation; (2) does not significantly alter proteasomal activity or cell viability; and (3) is reversible by Congo red and trehalose. Since SiO(2) nanoparticles trigger a subnuclear pathology resembling the one occurring in expanded polyglutamine neurodegenerative disorders, we suggest that integrity of the functional architecture of the cell nucleus should be used as a read out for cytotoxicity and considered in the development of safe nanotechnology. PMID:15777787

  15. Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Jiang, Zenan; Basile, A. F.; Zheng, Yongju; Dhar, Sarit

    2016-07-01

    To investigate the mechanism by which Sb at the SiO2/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO2/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO2/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO2, and O2 traps, suggested to be interstitial Si in SiO2. However, electron trapping is reduced by a factor of ˜2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

  16. Crystallisation of Ge nanoclusters in SiO 2 caused by electron irradiation in TEM

    NASA Astrophysics Data System (ADS)

    Klimenkov, M.; Matz, W.; Nepijko, S. A.; Lehmann, M.

    2001-07-01

    Ge nanoparticles fabricated by ion implantation technique in SiO 2 thin film crystallise after irradiation with a high-energy electron beam. The crystallisation process depends on the irradiation fluence and flux. Irradiation with a fluence above 6×10 3 C/ cm2 results in cluster growth and above 4×10 4 C/ cm2 in crystallisation. An irradiation with flux below 150 A/cm 2 leads to the crystallisation of Ge nanoparticles in the form of single crystals. For irradiation flux above this value the formation of twinned and multiply twinned particles (MTP) was observed.

  17. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  18. Control of resputtering in biased CoCrPt -SiO2 media to enhance grain decoupling and grain size distribution

    NASA Astrophysics Data System (ADS)

    Lee, Hwan-Soo; Guo, Vickie W.; Zhu, Jian-Gang; Laughlin, David E.

    2008-04-01

    A CoCrPt -SiO2 magnetic layer was investigated as functions of argon pressure and substrate bias voltage. Use of these two parameters provided fine tuning of the average kinetic energy of incoming Ar +, which causes resputtering and, consequently, influences adatom mobility during film growth. Biasing and high Ar pressure resulted in a significant improvement in grain decoupling and grain size distribution in the films. Furthermore, resputtering of the metal and oxide species from the growing CoCrPt -SiO2 film was interpreted in terms of the surface adhesion energy of the species on the metal Ru underlayer.

  19. Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1980-01-01

    A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

  20. Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

    1979-01-01

    The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

  1. Scalable flame synthesis of SiO2 nanowires: dynamics of growth

    PubMed Central

    Tricoli, Antonio; Righettoni, Marco; Krumeich, Frank; Stark, Wendelin J; Pratsinis, Sotiris E

    2013-01-01

    Silica nanowire arrays were grown directly onto plain glass substrates by scalable flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate). The silicon dioxide films consisted of a network of interwoven nanowires from a few to several hundred nanometres long (depending on the process conditions) and about 20 nm in diameter, as determined by scanning electron microscopy. These films were formed rapidly (within 10–20 s) at high growth rates (ca 11–30 nm s−1) by chemical vapour deposition (surface growth) at ambient conditions on the glass substrate as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, on high purity quartz nearly no nanowires were grown while on steel substrates porous SiO2 films were formed. Functionalization with perfluorooctyl triethoxysilane converted the nanowire surface from super-hydrophilic to hydrophobic. Additionally, their hermetic coating by thin carbon layers was demonstrated also revealing their potential as substrates for synthesis of other functional 1D composite structures. This approach is a significant step towards large scale synthesis of SiO2 nanowires facilitating their utilization in several applications. PMID:20972311

  2. Scalable flame synthesis of SiO2 nanowires: dynamics of growth.

    PubMed

    Tricoli, Antonio; Righettoni, Marco; Krumeich, Frank; Stark, Wendelin J; Pratsinis, Sotiris E

    2010-11-19

    Silica nanowire arrays were grown directly onto plain glass substrates by scalable flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate). The silicon dioxide films consisted of a network of interwoven nanowires from a few to several hundred nanometres long (depending on the process conditions) and about 20 nm in diameter, as determined by scanning electron microscopy. These films were formed rapidly (within 10-20 s) at high growth rates (ca 11-30 nm s(-1)) by chemical vapour deposition (surface growth) at ambient conditions on the glass substrate as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, on high purity quartz nearly no nanowires were grown while on steel substrates porous SiO(2) films were formed. Functionalization with perfluorooctyl triethoxysilane converted the nanowire surface from super-hydrophilic to hydrophobic. Additionally, their hermetic coating by thin carbon layers was demonstrated also revealing their potential as substrates for synthesis of other functional 1D composite structures. This approach is a significant step towards large scale synthesis of SiO(2) nanowires facilitating their utilization in several applications. PMID:20972311

  3. Behaviour of Copper In Annealed Cu/Sio2/Si Systems For On-Chip Interconnections

    NASA Astrophysics Data System (ADS)

    Htwe, Thant Zin; Latt, Khin Maung

    2010-01-01

    The electrical and structural properties of thin copper films attract increasing attention nowadays because of the use for on-chip interconnections. The main advantages of copper are the excellent conductivity and the relatively high stability against electro migration damaging. Interdiffusion at the copper/silicon interface can be a remarkable drawback of the interconnection quality even at room temperature which leads to the use of barrier layers between copper and silicon in technical applications. Often, thermal annealing of the as-deposited copper films is required to ensure proper process integration. In the present paper, Copper thin films of thickness 100 nm are deposited on SiO2/Si by ionized metal plasma deposition method. Then samples are annealed at different temperatures under high vacuum condition. The behavior of copper and the mechanism of compound formation studied at different temperatures, using scanning electron microscopy SEM, X-ray diffraction XRD and four point probe method. Diffusion of Cu into SiO2/Si layer start at 550° C and form CuxSiy. Oxidation of Cu is also take place at high temperature annealing.

  4. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    NASA Astrophysics Data System (ADS)

    del Prado, A.; San Andrés, E.; Mártil, I.; González-Díaz, G.; Bravo, D.; López, F. J.; Fernández, M.; Martínez, F. L.

    2003-07-01

    The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O2 and N2 as precursor gases. For SiOxNyHz films with composition close to that of SiO2, which have a very low H content, RTA induces thermal relaxation of the lattice and improvement of the structural order. For films of intermediate composition and of compositions close to SiNyHz, the main effect of RTA is the release of H at high temperatures (T>700 °C). This H release is more significant in films containing both Si-H and N-H bonds, due to cooperative reactions between both kinds of bonds. In these films the degradation of structural order associated to H release prevails over thermal relaxation, while in those films with only N-H bonds, thermal relaxation predominates. For annealing temperatures in the 500-700 °C range, the passivation of dangling bonds by the nonbonded H in the films and the transition from the paramagnetic state to the diamagnetic state of the K center result in a decrease of the density of paramagnetic defects. The H release observed at high annealing temperatures is accompanied by an increase of density of paramagnetic defects.

  5. Durable solgel antireflective films with high laser-induced damage thresholds for inertial confinement fusion

    NASA Astrophysics Data System (ADS)

    Xu, Yao; Zhang, Lei; Wu, Dong; Sun, Yu Han; Huang, Zu Xing; Jiang, Xiao Dong; Wei, Xiao Feng; Li, Zhi Hong; Dong, Bao Zhong; Wu, Zhong Hua

    2005-04-01

    We tested the use of two hydrophobic methyl-substituted silane precursors, methyltriethoxysilane and dimethyldiethoxysilane, to synthesize methyl-modified silica sols by a two-step method and a cohydrolysis method to produce durable antireflective films with high laser-induced-damage thresholds (LIDTs). Using small-angle x-ray scattering technology, we obtained details of the microstructure of clusters in sol and found various double fractal structural characteristics in the methyl-modified silica clusters; our findings were confirmed by transmission-electron micrographs. Through a 29Si magic-angle spin nuclear magnetic resonance study of the corresponding xerogels, we determined the double-fractal microstructure, which we then related to the LIDTs of AR films. The distribution configuration of methyls in clusters determined the double-fractal microstructure of clusters and then the LIDTs of AR films. The LIDTs of films produced by the cohydrolysis method (the highest was 38 J/cm2 for 1-ns, 1064-nm laser action) were much higher than those from the two-step method because of the loose netlike clusters in the former configuration. During the 220-day aging, the transmittance of hydrophobic AR film decreased ~0.2%. So it is practicable to prepare durable AR films with higher LIDTs than those of normal AR SiO2 films only by introducing hydrophobic methyls into a Si-O-Si matrix of clusters if an appropriate hydrophobic precursor is chosen.

  6. Dissolution Kinetics of SiO2 into CaO-Fe2O3-SiO2 Slag

    NASA Astrophysics Data System (ADS)

    Yu, Bin; Lv, Xuewei; Xiang, Shenglin; Xu, Jian

    2016-06-01

    High-basicity sinter is the predominant Fe-bearing material used in blast furnace process in East Asia. The dissolution of SiO2 into molten calcium ferrite influences the assimilation process. In this study, a rotating cylinder method was used to explore the dissolution kinetics of SiO2 into CaO-Fe2O3-SiO2 slag. The influencing factors, including temperature, rotating time and speed, and initial composition of the slag, were considered. Results showed that the dissolution rate increased with increasing rotation speed and temperature, whereas the increase in ω(SiO2) or ω(Fe2O3)/ ω(CaO) ratio in the initial slag composition decreased the dissolution rate. The diffusion coefficient and activation energy of SiO2 during the dissolution process ranged from 2.09 × 10-6 to 6.40 × 10-6 cm2 s-1 and 106.62 to 248.20 kJ mol-1, respectively. Concentration difference between the boundary layer and bulk phase was the primary driving force of the dissolution process; however, this process was also influenced by the slag viscosity and ion diffusivity.

  7. Electrochemically controlled transport of lithium through ultrathin SiO2

    NASA Astrophysics Data System (ADS)

    Ariel, Nava; Ceder, Gerbrand; Sadoway, Donald R.; Fitzgerald, Eugene A.

    2005-07-01

    Monolithically integrating the energy supply unit on a silicon integrated circuit (IC) requires the development of a thin-film solid-state battery compatible with silicon IC fabrication methods, materials, and performance. We have envisioned materials that can be processed in a silicon fabrication environment, thus bringing local stored energy to silicon ICs. By incorporating the material directly onto the silicon wafer, the economic parallelism that silicon complementary metal-oxide-semiconductor (CMOS) technology has enjoyed can be brought to power incorporation in each IC on a processed wafer. It is natural to look first towards silicon CMOS materials, and ask which materials need enhancement, which need replacement, and which can be used "as is." In this study, we begin by using two existing CMOS materials and one unconventional material for the construction of a source of electric power. We have explored the use of thermally grown silicon dioxide (SiO2) as thin as 9nm acting as an electrolyte material candidate in a solid-state power cell integrated on silicon. Other components of the thin-film cell consisted of rf-sputtered lithium cobalt oxide (LiCoO2) as the cathode and highly doped n-type polycrystalline silicon (polysilicon) grown by low-pressure chemical-vapor deposition as the anode. All structures were fabricated using conventional microelectronics fabrication technology. The charge and discharge behaviors of the LiCoO2/SiO2/polysilicon cells were studied. On the basis of the impedance measurements an equivalent circuit model of an ultrathin cell was inferred, and its microstructure was characterized by electron microscopy imaging. In spite of its high series resistance (˜4×107Ω ), we have shown that an ultrathin layer of an as-deposited Li-free SiO2 is an interesting candidate for an electrolyte or controllable barrier layer in lithium-ion-based devices.

  8. Enhanced photoluminescence from CdS with SiO2 nanopillar arrays

    PubMed Central

    Li, Wei; Wang, Shaolei; He, Sufeng; Wang, Jing; Guo, Yanyan; Guo, Yufeng

    2015-01-01

    In this paper, the enhanced photoluminescence from CdS thin film with SiO2 nanopillar array (NPA) was demonstrated. The CdS was prepared using chemical bath deposition in a solution bath containing CdSO4, SC(NH2)2, and NH4OH. The SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques. The nanopillar is about 50 nm in diameter, and the height is 150 nm. As a result, the sample with NPA shows an obvious improvement of photoluminescence (PL), compared with the one without NPA. In addition, we also observed that the PL intensity is increased ~5 times if the active layer is deposited on the nanopillar arrays and covered by a thin metal film of Al. It is noteworthy that the enhancement of photoluminescence could be attributed to the roughness of the surface, the 2D photonic band gap (PBG) effect and the surface plasmon resonance (SPR) effects. PMID:26077552

  9. Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials.

    PubMed

    Hien, Vu Xuan; Heo, Young-Woo

    2016-08-24

    We introduce a simple process for the fabrication of SiO2 films embedded with β-Sn-rich nano/microspheres. Sn spheres with maximum and minimum sizes of 10 μm (near the SiO2 surface) and 5 nm (at the Si/SiO2 interface) were grown within a 0.7-5.7 μm-thick SiO2 layer by evaporating SnO powders onto an Si (100) substrate for 1-600 min at 600-900 °C and 0.001-5.0 Torr. A possible growth mechanism of these materials is discussed. The current-voltage characteristics of the as-fabricated samples were investigated to identify potential applications. During these tests, small flashes of light and the presence of damaged areas were observed at the oxide surfaces of the samples using an optical camera and a field emission scanning electron microscope, respectively. The electrical breakdown and shutdown of the devices observed in the current-voltage curves were attributed to the destruction of the SiO2 surface. In addition, the current-time responses show that the size of the damaged regions can be controlled by the voltage and duration of the applied stress, and are independent of the size and shape of the electrodes. The present materials thus possess great potential for applications in self-destructing devices. PMID:27463945

  10. Structural stability of Cu nanocrystals in SiO 2 exposed to high-energy ion irradiation

    NASA Astrophysics Data System (ADS)

    Johannessen, B.; Kluth, P.; Glover, C. J.; Kluth, S. M.; Foran, G. J.; Cookson, D. J.; Llewellyn, D. J.; Ridgway, M. C.

    2006-09-01

    Cu nanocrystals (NCs) were synthesized in SiO 2 by ion implantation and thermal annealing. Annealing at two different temperatures of 950 °C and 650 °C yielded two different nanocrystal size distributions with an average diameter of 8.1 and 2.5 nm, respectively. Subsequently the NCs were exposed to 5.0 MeV Sn 3+ ion irradiation simultaneously with a thin Cu film as a bulk reference. The short-range atomic structure and average NC diameter was measured by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and small angle X-ray scattering (SAXS), respectively. Consistent with the high regeneration rate of bulk elemental metals, no irradiation induced defects were observed for the reference, whereas the small NCs (2.5 nm) were dissolved as Cu monomers in the matrix. The latter was attributed to irradiation-induced mixing of Cu, Si and O based on dynamic binary collision simulations. For the large NCs (8.1 nm) only minor structural changes were observed upon irradiation, consistent with a more bulk-like pre-irradiation structure.

  11. In situ synthesis and hydrothermal crystallization of nanoanatase TiO2 -SiO2 coating on aramid fabric (HTiSiAF) for UV protection.

    PubMed

    Deng, Hui; Zhang, Hongda

    2015-10-01

    TiO2 -SiO2 thin film was prepared by sol-gel method and coated on the aramid fabric to prepare functional textiles. The aramid fabric was dipped and withdrawn in TiO2 -SiO2 gel and hydrothermal crystallization at 80(°) C, then its UV protection functionality was evaluated. The crystalline phase and the surface morphology of TiO2 -SiO2 thin film were characterized using SEM, XRD, and AFM respectively. SEM showed hydrothermal crystallization led to a homogeneous dispersion of anatase nonocrystal in TiO2 -SiO2 film, and XRD suggested the mean particle size of the formed anatase TiO2 was less than 30 nm. AFM indicated that hydrothermal treatment enhanced the crystallization of TiO2 . UV protection analysis suggested that the hydrothermally treated coated textile had a better screening property in comparison with TiO2 -SiO2 gel and native aramid fabric. PMID:26303384

  12. Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification

    NASA Astrophysics Data System (ADS)

    Tsaur, B.-Y.; Fan, J. C. C.; Geis, M. W.; Silversmith, D. J.; Mountain, R. W.

    1981-10-01

    Continuous single-crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly-Si films by the LESS technique (lateral epitaxy by seeded solidification). Seeding is achieved either with a narrow stripe opening in a recessed SiO2 layer on a single-crystal Si substrate or with an external single-crystal Si seed. N-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in these films exhibit surface electron mobilities as high as 700 sq cm/V s.

  13. Silicon-silicon bonds in the oxide near the SiO 2/Si interface

    NASA Astrophysics Data System (ADS)

    Terada, Naozumi; Haga, Takashi; Miyata, Noriyuki; Moriki, Kazunori; Fujisawa, Masami; Morita, Mizuho; Ohmi, Tadahiro; Hattori, Takeo

    The contribution of the SiO 2/Si interface structure to optical absorption below the optical absorption edge of fused quartz was studied by measuring the reflectance of thermally grown ultrathin silicon oxide films. From the modified Kramers-Kronig analysis of reflectance, it was found that optical absorption at the photon energy of 7.8 eV arises from Si sbnd Si bonds in the oxide film within 1.4 nm of the interface. The approximate areal density of Si sbnd Si bonds is 7 × 10 14 cm -2 and is approximately equal to the areal density of silicon su☐ides determined by X-ray photoelectron spectroscopy.

  14. Molecular dynamics of liquid SiO2 under high pressure

    NASA Technical Reports Server (NTRS)

    Rustad, James R.; Yuen, David A.; Spera, Frank J.

    1990-01-01

    The molecular dynamics of pure SiO2 liquids was investigated up to pressures of 20 GPa at 4000 K using 252, 498, 864, and 1371 particles. The results obtained suggest that the pressure-induced maxima in the self-diffusion coefficients of both oxygen and silicon are dependent on the system size. In the case of larger systems, the maximum decreases and shifts to lower pressures. Changes in the velocity autocorrelation function with increasing pressure are described. The populations of anomalously coordinated silicon and oxygen are then discussed as a function of pressure and system size.

  15. Molecular-Orientation-Induced Rapid Roughening and Morphology Transition in Organic Semiconductor Thin-Film Growth

    PubMed Central

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S.

    2015-01-01

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals. PMID:25801646

  16. Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

    PubMed

    Mohapatra, Satyabrata

    2016-02-01

    Nanocomposite thin films containing Ag nanoparticles embedded in the GeO2-SiO2 matrix were synthesized by the atom beam co-sputtering technique. The structural, optical and plasmonic properties and the chemical composition of the nanocomposite thin films were studied by transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDX), UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). UV-visible absorption studies on Ag-SiO2 nanocomposites revealed the presence of a strong localized surface plasmon resonance (LSPR) peak characteristic of Ag nanoparticles at 413 nm, which showed a blue shift of 26 nm (413 to 387 nm) along with a significant broadening and drastic decrease in intensity with the incorporation of 16 at% of Ge into the SiO2 matrix. TEM studies on Ag-GeO2-SiO2 nanocomposite thin films confirmed the presence of Ag nanoparticles with an average size of 3.8 nm in addition to their aggregates with an average size of 16.2 nm. Thermal annealing in air resulted in strong enhancement in the intensity of the LSPR peak, which showed a regular red shift of 51 nm (from 387 to 438 nm) with the increase in annealing temperature up to 500 °C. XPS studies showed that annealing in air resulted in oxidation of excess Ge atoms in the nanocomposite into GeO2. Our work demonstrates the possibility of controllably tuning the LSPR of Ag nanoparticles embedded in the GeO2-SiO2 matrix by single-step thermal annealing, which is interesting for optical applications. PMID:26766559

  17. Lysine adsorption on the silanized SiO 2-surface for immobilization of the estrogen receptor hER α

    NASA Astrophysics Data System (ADS)

    Cherkouk, C.; Rebohle, L.; Skorupa, W.

    2011-03-01

    We investigated the adsorption of the L-lysine (200 mmol) molecule to a silanized SiO 2 surface as a function of the pH value. The SSC (Spraying Spin Coating) method [Cherkouk et al., J. Colloid Interf. Sci. 337 (2009) 375-380] was applied to functionalize the SiO 2 surface by using the (3-aminopropyl)trimethoxysilane (APMS) as coupling agent with a NH 2 functional group. We adsorbed lysine molecules to the silane film for pH-values of 2.5, 7.5, 8.7, 9.5 and 13, which correspond to the di-cationic, cationic, zwitterinonic (pH 8.7 and 9.5) and the anionic charge state of lysine, respectively. The infrared spectroscopy is not suitable to investigate the system because the NH 3+ signal at 1600 cm -1 originating from the silane film overlaps with the infrared signal of the deprotonated carboxyl group of the lysine molecule. X-ray photoelectron spectroscopy (XPS) was used to measure the binding energies C 1s and N 1s as function of the pH value. This pH change affects the charge state which was fitted in the XPS spectra to obtain the optimal adsorption conditions at pH 7.5 of the lysine to the functionalized SiO 2 surface.

  18. Avalanches in compressed porous SiO(2)-based materials.

    PubMed

    Nataf, Guillaume F; Castillo-Villa, Pedro O; Baró, Jordi; Illa, Xavier; Vives, Eduard; Planes, Antoni; Salje, Ekhard K H

    2014-08-01

    The failure dynamics in SiO(2)-based porous materials under compression, namely the synthetic glass Gelsil and three natural sandstones, has been studied for slowly increasing compressive uniaxial stress with rates between 0.2 and 2.8 kPa/s. The measured collapsed dynamics is similar to Vycor, which is another synthetic porous SiO(2) glass similar to Gelsil but with a different porous mesostructure. Compression occurs by jerks of strain release and a major collapse at the failure point. The acoustic emission and shrinking of the samples during jerks are measured and analyzed. The energy of acoustic emission events, its duration, and waiting times between events show that the failure process follows avalanche criticality with power law statistics over ca. 4 decades with a power law exponent ɛ≃ 1.4 for the energy distribution. This exponent is consistent with the mean-field value for the collapse of granular media. Besides the absence of length, energy, and time scales, we demonstrate the existence of aftershock correlations during the failure process. PMID:25215740

  19. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  20. Wetting properties of phospholipid dispersion on tunable hydrophobic SiO2-glass plates.

    PubMed

    Alexandrova, Lidia; Karakashev, Stoyan I; Grigorov, L; Phan, Chi M; Smoukov, Stoyan K

    2015-06-01

    We study the wetting properties of very small droplets of salty aqueous suspensions of unilamellar liposomes of DMPC (dimyristoylphosphatidylcholine), situated on SiO2-glass surfaces with different levels of hydrophobicity. We evaluated two different measures of hydrophobicity of solid surfaces - receding contact angles and the thickness of wetting films trapped between an air bubble and the solid surface at different levels of hydrophobicity. We established a good correlation between methods which differ significantly in measurement difficulty and experimental setup. We also reveal details of the mechanism of wetting of different surfaces by the DMPC liposome suspension. Hydrophilic surfaces with water contact angles in the range of 0° to 35° are readily hydrophobized by the liposomes and only showed corresponding contact angles in the range 27°-43°. For same range of surface hydrophobicities, there was a clear reduction of the thickness of the wetting films between the surface and a bubble, reaching a minimum in the 35°-40° range. At higher levels of hydrophobicity both pure water and the liposome suspension show similar contact angles, and the thickness of wetting films between a bubble and those surfaces increases in parallel. Our analysis showed that the only force able to stabilize the film under these experimental conditions is steric repulsion. The latter suggests that nanobubbles adsorbed on hydrophobic parts of the surface, and coated with a DMPC layer, may be the cause of the 40-70 nm thickness of wetting films we observe. PMID:25441448

  1. Engineered magnetic core-shell SiO2/Fe microspheres and "medusa-like" microspheres of SiO2/iron oxide/carbon nanofibers or nanotubes.

    PubMed

    Mero, On; Sougrati, Moulay-Tahar; Jumas, Jean-Claude; Margel, Shlomo

    2014-08-19

    Iron oxide (IO) thin coatings of controlled thickness on SiO2 microspheres of narrow size distribution were prepared by decomposition at 160 °C of triiron dodecacarbonyl onto silica microspheres dispersed in diethylene glycol diethyl ether free of surfactant or stabilizer. The dried washed SiO2/IO core-shell microspheres were annealed at different temperatures and time periods under inert (Ar) or reducing (H2) atmosphere. The effect of temperature on the chemical composition, morphology, crystallinity, and magnetic properties of the IO and the elemental Fe nanoparticles type coatings onto the SiO2 core microspheres has been elucidated. "Medusa-like" SiO2/IO/carbon nanofibers and tubes particles were prepared by CVD of ethylene on the surface of the SiO2/IO microspheres at different temperatures. The morphology change of the grafted carbon nanofibers and tubes as a function of the CVD temperature was also elucidated. PMID:25089849

  2. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

    NASA Astrophysics Data System (ADS)

    Liu, Po-Tsun; Chang, Chih-Hsiang; Chang, Chih-Jui

    2016-06-01

    This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

  3. Nonvolatile memory characteristics of WSi2 nanocrystals embedded in SiO2 dielectrics.

    PubMed

    Seo, Ki Bong; Lee, Dong Uk; Han, Seung Jong; Kim, Seon Pil; Kim, Eun Kyu

    2011-01-01

    A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of WSi2 nanocrystals were measured up to 5.9 V when the gate voltage sweep in the range of +/- 9 V. The memory window was decreased from 3.7 V to 1.9 V after 1 h and remained about 3.7 V after 10(5) programming/erasing cycles. These results show that there is a possibility for the WSi2 nanocrystals to be applied to nonvolatile memory devices. PMID:21446472

  4. Structure and morphology of ion irradiated Au nanocrystals in SiO 2

    NASA Astrophysics Data System (ADS)

    Kluth, P.; Johannessen, B.; Kluth, S. M.; Foran, G. J.; Cookson, D. J.; Ridgway, M. C.

    2006-09-01

    We have investigated the effect of ion irradiation on the structure and morphology of Au nanocrystals (NCs) fabricated by ion beam synthesis in a thin SiO 2 layer on a Si substrate. Extended X-ray absorption fine structure (EXAFS) spectroscopy measurements show a significant drop in the average Au-Au coordination, as well as a loss of medium and long range order with increasing irradiation dose. Small angle X-ray scattering (SAXS) measurements reveal a concomitant reduction in average NC size. These observations are a consequence of structural disorder and collisional mixing induced by the irradiation. The observed reduction in average Au-Au coordination by EXAFS differs significantly from that estimated from the average NC sizes evaluated using SAXS. This behavior can be explained by the dissolution of Au NCs into the SiO 2 matrix. A significant bond-length contraction indicates that part of this material forms small Au clusters (dimers, trimers, etc.) during irradiation that cannot be detected by SAXS. Combining the results from SAXS and EXAFS measurements, we estimate the volume fraction of such clusters.

  5. Fabrication of rattle-type TiO2/SiO2 core/shell particles with both high photoactivity and UV-shielding property.

    PubMed

    Ren, Yuan; Chen, Min; Zhang, Yang; Wu, Limin

    2010-07-01

    Rattle-type TiO(2)@void@SiO(2) particles, with commercial TiO(2) particles encapsulated into hollow SiO(2) shell, were fabricated by successive coating of multilayer polyelectrolytes and SiO(2) shell onto TiO(2) particles and then treatment by UV irradiation to remove the polyelectrolyte layers. TEM observation showed that the composite particles had a unique rattle-type structure in which there existed void space between TiO(2) core and SiO(2) shell. The photocatalytic degradation of Rhodamine B indicated that these composite particles with larger void space tended to have higher photoactivity. The polyurethane films doped with rattle-type TiO(2)@void@SiO(2) composite particles had very good UV-shielding property. PMID:20536170

  6. Direct fabrication of hybrid nanofibres composed of SiO2-PMMA nanospheres via electrospinning.

    PubMed

    Zhang, Ran; Shang, Tinghua; Yang, Guang; Jia, Xiaolong; Cai, Qing; Yang, Xiaoping

    2016-08-01

    The direct fabrication of hybrid nanofibres composed of poly(methyl methacrylate)-grafted SiO2 (SiO2-PMMA) nanospheres via electrospinning was investigated in detail. SiO2-PMMA nanospheres were successfully prepared, with the SiO2 nanospheres synthesized via the Stober method, followed by in situ surface-initiated atom transfer radical polymerization of methyl methacrylate (MMA). Electrospinning was carried out with N,N-dimethylformamide (DMF) as the solvent to disperse SiO2-PMMA nanospheres. The size of the SiO2 core, the molecular weight of the PMMA shell and the concentration of the SiO2-PMMA/DMF solution all had substantial effects on the morphology and structure of electrospun nanofibres composed of SiO2-PMMA nanospheres. When these determining factors were well-tailored, it was found that one-dimensional necklace-like nanofibres were obtained, with SiO2-PMMA nanospheres aligned one by one along the fibre. The successful fabrication of nanofibres by directly electrospinning the SiO2-PMMA/DMF solution verified that polymer-grafted particles possess polymer-like characteristics, which endowed them with the ability to be processed into desirable shapes and structures. PMID:27092439

  7. Effect of resist mask roughing on the etching profile of SiO2 trench under the presence of local charging

    NASA Astrophysics Data System (ADS)

    Inagaki, Shinpei; Yagisawa, Takashi; Makabe, Toshiaki

    2009-10-01

    The reactive ion etching (RIE) of high-aspect ratio contact hole made of SiO2 has been traditionally performed by fluorocarbon gas CxFy diluted with Ar (> 90%) in a two-frequency capacitively coupled plasma (2f-CCP) reactor. The RIE proceeds under the competition among surface protection by the deposition of CxFy radicals, chemical sputtering by energetic ions, and topological charging caused by the difference of velocity distribution of ions and electrons coming to the surface. In our previous work, feature profile evolution of SiO2 trench pattern was predicted by using the level-set method considering mixing layer and CxFy polymer layer on SiO2 substrate. It is experimentally known that the roughness of the photoresist mask on SiO2 film makes large influence on the etching profile, called ``faceting'' or ``striation'' probably due to the high-energy ion impact. In this study, we develop our feature profile model in order to investigate the relation between resist mask roughing and the feature profile of SiO2 trench. Attention will be paid to the scattering of incident ions on the faceting structure of the resist mask and local charging as functions of the flux velocity distribution of ions and radicals.

  8. Silicon (100)/SiO2 by XPS

    SciTech Connect

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  9. Single Particle Jumps in Sheared SiO2

    NASA Astrophysics Data System (ADS)

    McMahon, Sean; Vollmayr-Lee, Katharina; Cookmeyer, Jonathan; Horbach, Juergen

    We study the dynamics of a sheared glass via molecular dynamics simulations. Using the BKS potential we simulate the strong glass former SiO2. The system is initially well equilibrated at a high temperature, then quenched to a temperature below the glass transition, and, after a waiting time at the desired low temperature, sheared with constant strain rate. We present preliminary results of an analysis of single particle trajectories of the sheared glass. We acknowledge the support via NSF REU Grant #PHY-1156964, DoD ASSURE program, and NSF-MRI CHE-1229354 as part of the MERCURY high-performance computer consortium. We thank G.P. Shrivastav, Ch. Scherer and B. Temelso.

  10. In vitro and in vivo genotoxicity investigations of differently sized amorphous SiO2 nanomaterials.

    PubMed

    Maser, Elena; Schulz, Markus; Sauer, Ursula G; Wiemann, Martin; Ma-Hock, Lan; Wohlleben, Wendel; Hartwig, Andrea; Landsiedel, Robert

    2015-12-01

    In vitro and in vivo genotoxic effects of differently sized amorphous SiO2 nanomaterials were investigated. In the alkaline Comet assay (with V79 cells), non-cytotoxic concentrations of 300 and 100-300μg/mL 15nm-SiO2 and 55nm-SiO2, respectively, relevant (at least 2-fold relative to the negative control) DNA damage. In the Alkaline unwinding assay (with V79 cells), only 15nm-SiO2 significantly increased DNA strand breaks (and only at 100μg/mL), whereas neither nanomaterial (up to 300μg/mL) increased Fpg (Formamidopyrimidine DNA glycosylase)-sensitive sites reflecting oxidative DNA base modifications. In the Comet assay using rat precision-cut lung slices, 15nm-SiO2 and 55nm-SiO2 induced significant DNA damage at ≥100μg/mL. In the Alkaline unwinding assay (with A549 cells), 30nm-SiO2 and 55nm-SiO2 (with larger primary particle size (PPS)) induced significant increases in DNA strand breaks at ≥50μg/mL, whereas 9nm-SiO2 and 15nm-SiO2 (with smaller PPS) induced significant DNA damage at higher concentrations. These two amorphous SiO2 also increased Fpg-sensitive sites (significant at 100μg/mL). In vivo, within 3 days after single intratracheal instillation of 360μg, neither 15nm-SiO2 nor 55nm-SiO2 caused genotoxic effects in the rat lung or in the bone marrow. However, pulmonary inflammation was observed in both test groups with findings being more pronounced upon treatment with 15nm-SiO2 than with 55nm-SiO2. Taken together, the study shows that colloidal amorphous SiO2 with different particle sizes may induce genotoxic effects in lung cells in vitro at comparatively high concentrations. However, the same materials elicited no genotoxic effects in the rat lung even though pronounced pulmonary inflammation evolved. This may be explained by the fact that a considerably lower dose reached the target cells in vivo than in vitro. Additionally, the different time points of investigation may provide more time for DNA damage repair after instillation. PMID:26653985

  11. Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Lee, Ming-Kwei

    2014-12-01

    The characteristics of a liquid-phase-deposited SiO2 film on InP were investigated. The mixture of H2SiF6 and H3BO3 aqueous precursors was used as the growth solution. SiO2 on InP with (NH4)2S treatment showed good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics were further improved with an ultrathin Si interface passivation layer (IPL) through reductions in Fermi-level pinning and interface state density. Moreover, during the SiO2 deposition, the HF in the growth solution simultaneously and effectively removed native oxides from the Si-IPL and provided fluorine passivation on it. The Al/SiO2/Si-IPL/(NH4)2S-treated InP MOS capacitor showed superior electrical properties. The leakage current density reached 6.9 × 10-9 and 1.6 × 10-7 A/cm2 at ±2 V. The interface state density reached 3.6 × 1011 cm-2 eV-1 with low frequency dispersion of 12.3%.

  12. XPS study of interface formation of CVD SiO2 on InSb. [X-ray Photoemission Spectroscopy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-01-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  13. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    NASA Astrophysics Data System (ADS)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  14. Segregation of gallium at SiO 2/Si interfaces during sputtering with Ga + ions: experimental and computer simulation study

    NASA Astrophysics Data System (ADS)

    Ignatova, V.; Chakarov, I.; Torrisi, A.; Licciardello, A.

    2002-02-01

    The sputtering of SiO 2/Si interfaces with gallium ions was studied both experimentally by using secondary neutral mass spectrometry (SNMS) and by computer simulations by means of a dynamic Monte Carlo code. Oscillations of the gallium signal (from implanted primary ions) at the interface between the SiO 2 and Si layers were observed. By means of computer simulations, it was shown that cascade effects alone cannot explain the experimental depth profiles. A model that includes additional defect transport phenomena such as bombardment-induced segregation is proposed and incorporated in an existing dynamic Monte Carlo computer code. The simulations with the new code give rise to profiles that are comparable with the experimental ones, confirming the correctness of the chosen approach.

  15. Structure and dynamics of pentacene on SiO2: From monolayer to bulk structure

    NASA Astrophysics Data System (ADS)

    Brillante, Aldo; Bilotti, Ivano; Della Valle, Raffaele Guido; Venuti, Elisabetta; Girlando, Alberto; Masino, Matteo; Liscio, Fabiola; Milita, Silvia; Albonetti, Cristiano; D'angelo, Pasquale; Shehu, Arian; Biscarini, Fabio

    2012-05-01

    We have used confocal micro Raman spectroscopy, atomic force microscopy (AFM), and x-ray diffraction (XRD) to investigate pentacene films obtained by vacuum deposition on SiO2 substrates. These methods allow us to follow the evolution of lattice structure, vibrational dynamics, and crystal morphology during the growth from monolayer, to TF, and, finally, to bulk crystal. The Raman measurements, supported by the AFM and XRD data, indicate that the film morphology depends on the deposition rate. High deposition rates yield two-dimensional nucleation and quasi-layer-by-layer growth of the T-F form only. Low rates yield three-dimensional nucleation and growth, with phase mixing occurring in sufficiently thick films, where the T-F form is accompanied by the “high-temperature” bulk phase. Our general findings are consistent with those of previous work. However, the Raman measurements, supported by lattice dynamics calculations, provide additional insight into the nature of the TFs, showing that their characteristic spectra originate from a loss of dynamical correlation between adjacent layers.

  16. X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Hecht, M. H.; Grunthaner, F. J.; Naiman, M. L.

    1984-01-01

    X-ray photoelectron spectroscopy has been used to study the composition of 100-A thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiO(x)N(y)/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 A from the film/substrate interface. The interface region itself is found to be oxygen-rich relative to the rest of the film. Possible models which can explain these results are discussed.

  17. TiO2/SiO2 multilayer as an antireflective and protective coating deposited by microwave assisted magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, M.; Wojcieszak, D.; Domaradzki, J.; Kaczmarek, D.; Song, S.; Placido, F.

    2013-06-01

    In this paper designing, preparation and characterization of multifunctional coatings based on TiO2/SiO2 has been described. TiO2 was used as a high index material, whereas SiO2 was used as a low index material. Multilayers were deposited on microscope slide substrates by microwave assisted reactive magnetron sputtering process. Multilayer design was optimized for residual reflection of about 3% in visible spectrum (450-800 nm). As a top layer, TiO2 with a fixed thickness of 10 nm as a protective film was deposited. Based on transmittance and reflectance spectra, refractive indexes of TiO2 and SiO2 single layers were calculated. Ultra high vacuum atomic force microscope was used to characterize the surface properties of TiO2/SiO2 multilayer. Surface morphology revealed densely packed structure with grains of about 30 nm in size. Prepared samples were also investigated by nanoindentation to evaluate their protective performance against external hazards. Therefore, the hardness of the thin films was measured and it was equal to 9.34 GPa. Additionally, contact angle of prepared coatings has been measured to assess the wetting properties of the multilayer surface.

  18. Nanosecond homogeneous nucleation and crystal growth in shock-compressed SiO2

    NASA Astrophysics Data System (ADS)

    Shen, Yuan; Jester, Shai; Qi, Tingting; Reed, Evan

    Understanding the kinetics of shock-compressed SiO2 is of great importance for mitigating optical damage for high-intensity lasers and for understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high-pressure phases of this material, but the formation kinetics and underlying microscopic mechanisms are yet to be elucidated. Here, by employing multiscale molecular dynamics studies of shock-compressed fused silica and quartz, we find that silica transforms into a poor glass former that subsequently exhibits ultrafast crystallization within a few nanoseconds. We also find that, as a result of the formation of such an intermediate disordered phase, the transition between silica polymorphs obeys a homogeneous reconstructive nucleation and grain growth model. Moreover, we construct a quantitative model of nucleation and grain growth, and compare its predictions with stishovite grain sizes observed in laser-induced damage and meteoroid impact events.

  19. Nanosecond homogeneous nucleation and crystal growth in shock-compressed SiO2

    NASA Astrophysics Data System (ADS)

    Shen, Yuan; Jester, Shai B.; Qi, Tingting; Reed, Evan J.

    2016-01-01

    Understanding the kinetics of shock-compressed SiO2 is of great importance for mitigating optical damage for high-intensity lasers and for understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high-pressure phases of this material, but the formation kinetics and underlying microscopic mechanisms are yet to be elucidated. Here, by employing multiscale molecular dynamics studies of shock-compressed fused silica and quartz, we find that silica transforms into a poor glass former that subsequently exhibits ultrafast crystallization within a few nanoseconds. We also find that, as a result of the formation of such an intermediate disordered phase, the transition between silica polymorphs obeys a homogeneous reconstructive nucleation and grain growth model. Moreover, we construct a quantitative model of nucleation and grain growth, and compare its predictions with stishovite grain sizes observed in laser-induced damage and meteoroid impact events.

  20. Prediction of 10-fold coordinated TiO2 and SiO2 structures at multimegabar pressures

    PubMed Central

    Lyle, Matthew J.; Pickard, Chris J.; Needs, Richard J.

    2015-01-01

    We predict by first-principles methods a phase transition in TiO2 at 6.5 Mbar from the Fe2P-type polymorph to a ten-coordinated structure with space group I4/mmm. This is the first report, to our knowledge, of the pressure-induced phase transition to the I4/mmm structure among all dioxide compounds. The I4/mmm structure was found to be up to 3.3% denser across all pressures investigated. Significant differences were found in the electronic properties of the two structures, and the metallization of TiO2 was calculated to occur concomitantly with the phase transition to I4/mmm. The implications of our findings were extended to SiO2, and an analogous Fe2P-type to I4/mmm transition was found to occur at 10 TPa. This is consistent with the lower-pressure phase transitions of TiO2, which are well-established models for the phase transitions in other AX2 compounds, including SiO2. As in TiO2, the transition to I4/mmm corresponds to the metallization of SiO2. This transformation is in the pressure range reached in the interiors of recently discovered extrasolar planets and calls for a reformulation of the equations of state used to model them. PMID:25991859

  1. Prediction of 10-fold coordinated TiO2 and SiO2 structures at multimegabar pressures.

    PubMed

    Lyle, Matthew J; Pickard, Chris J; Needs, Richard J

    2015-06-01

    We predict by first-principles methods a phase transition in TiO2 at 6.5 Mbar from the Fe2P-type polymorph to a ten-coordinated structure with space group I4/mmm. This is the first report, to our knowledge, of the pressure-induced phase transition to the I4/mmm structure among all dioxide compounds. The I4/mmm structure was found to be up to 3.3% denser across all pressures investigated. Significant differences were found in the electronic properties of the two structures, and the metallization of TiO2 was calculated to occur concomitantly with the phase transition to I4/mmm. The implications of our findings were extended to SiO2, and an analogous Fe2P-type to I4/mmm transition was found to occur at 10 TPa. This is consistent with the lower-pressure phase transitions of TiO2, which are well-established models for the phase transitions in other AX2 compounds, including SiO2. As in TiO2, the transition to I4/mmm corresponds to the metallization of SiO2. This transformation is in the pressure range reached in the interiors of recently discovered extrasolar planets and calls for a reformulation of the equations of state used to model them. PMID:25991859

  2. Efficient drug delivery using SiO2-layered double hydroxide nanocomposites.

    PubMed

    Li, Li; Gu, Zi; Gu, Wenyi; Liu, Jian; Xu, Zhi Ping

    2016-05-15

    MgAl-layered double hydroxide (MgAl-LDH) nanoparticles have great potentials in drug and siRNA delivery. In this work, we used a nanodot-coating strategy to prepare SiO2 dot-coated layered double hydroxide (SiO2@MgAl-LDH) nanocomposites with good dispersibility and controllable size for drug delivery. The optimal SiO2@MgAl-LDH nanocomposite was obtained by adjusting synthetic parameters including the mass ratio of MgAl-LDH to SiO2, the mixing temperature and time. The optimal SiO2@MgAl-LDH nanocomposite was shown to have SiO2 nanodots (10-15nm in diameter) evenly deposited on the surface of MgAl-LDHs (110nm in diameter) with the plate-like morphology and the average hydrodynamic diameter of 170nm. We further employed SiO2@MgAl-LDH nanocomposite as a nanocarrier to deliver methotrexate (MTX), a chemotherapy drug, to the human osteosarcoma cell (U2OS) and found that MTX delivered by SiO2@MgAl-LDH nanocomposite apparently inhibited the U2OS cell growth. PMID:26930539

  3. Ultrahigh-pressure acoustic wave velocities of SiO2-Al2O3 glasses up to 200 GPa

    NASA Astrophysics Data System (ADS)

    Ohira, Itaru; Murakami, Motohiko; Kohara, Shinji; Ohara, Koji; Ohtani, Eiji

    2016-12-01

    Extensive experimental studies on the structure and density of silicate glasses as laboratory analogs of natural silicate melts have attempted to address the nature of dense silicate melts that may be present at the base of the mantle. Previous ultrahigh-pressure experiments, however, have been performed on simple systems such as SiO2 or MgSiO3, and experiments in more complex system have been conducted under relatively low-pressure conditions below 60 GPa. The effect of other metal cations on structural changes that occur in dense silicate glasses under ultrahigh pressures has been poorly understood. Here, we used a Brillouin scattering spectroscopic method up to pressures of 196.9 GPa to conduct in situ high-pressure acoustic wave velocity measurements of SiO2-Al2O3 glasses in order to understand the effect of Al2O3 on pressure-induced structural changes in the glasses as analogs of aluminosilicate melts. From 10 to 40 GPa, the transverse acoustic wave velocity ( V S ) of Al2O3-rich glass (SiO2 + 20.5 mol% Al2O3) was greater than that of Al2O3-poor glass (SiO2 + 3.9 mol% Al2O3). This result suggests that SiO2-Al2O3 glasses with higher proportions of Al ions with large oxygen coordination numbers (5 and 6) become elastically stiffer up to 40 GPa, depending on the Al2O3 content, but then soften above 40 GPa. At pressures from 40 to ~100 GPa, the increase in V S with increasing pressure became less steep than below 40 GPa. Above ~100 GPa, there were abrupt increases in the P-V S gradients ( dV S /dP) at 130 GPa in Al2O3-poor glass and at 116 GPa in Al2O3-rich glass. These changes resemble previous experimental results on SiO2 glass and MgSiO3 glass. Given that changes of dV S / dP have commonly been related to changes in the Si-O coordination states in the glasses, our results, therefore, may indicate a drastic structural transformation in SiO2-Al2O3 glasses above 116 GPa, possibly associated with an average Si-O coordination number change to higher than 6. Compared

  4. Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Guo, Li Qiang; Jin Wan, Chang; Qiang Zhu, Li; Wan, Qing

    2013-09-01

    Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with proton-induced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization.

  5. Synthesis of Copper-Based Nanostructured Catalysts on SiO2-Al2O3, SiO2-TiO2, and SiO2-ZrO2 Supports for NO Reduction.

    PubMed

    Namkhang, Pornpan; Kongkachuichay, Paisan

    2015-07-01

    The selective catalytic reduction of NO over a series of Cu-based catalysts supported on modified silica including SiO2-Al2O3, SiO2-TiO2, and SiO2-ZrO2 prepared via a sol-gel process and a flame spray pyrolysis (FSP) was studied. The prepared catalysts were characterized by means of TEM, XRD, XRF, TPR, and nitrogen physisorption measurement techniques, to determine particle diameter, morphology, crystallinity, phase composition, copper reducibility, surface area, and pore size of catalysts. The particles obtained from sol-gel method were almost spherical while the particles obtained from the FSP were clearly spherical and non-porous nanosized particles. The effects of Si:Al, Si:Ti, and Si:Zr molar ratio of precursor were identified as the domain for different crystalline phase of materials. It was clearly seen that a high SiO2 content inhibited the crystallization of materials. The BET surface area of catalysts obtained from sol-gel method was higher than that from the FSP and it shows that surface area increased with increasing SiO2 molar ratio due to high surface area from SiO2. The catalyst performances were tested for the selective catalytic reduction of NO with H2. It was found that the catalyst prepared over 7 wt% Cu on Si02-Al2O3 support was the most active compared with the others which converted NO as more than 70%. Moreover, the excess copper decreased the performance of NO reduction, due to the formation of CuO agglomeration covered on the porous silica as well as the alumina surface, preventing the direct contact of CO2 and AL2O3. PMID:26373151

  6. UV-Triggered Self-Healing of a Single Robust SiO2 Microcapsule Based on Cationic Polymerization for Potential Application in Aerospace Coatings.

    PubMed

    Guo, Wanchun; Jia, Yin; Tian, Kesong; Xu, Zhaopeng; Jiao, Jiao; Li, Ruifei; Wu, Yuehao; Cao, Ling; Wang, Haiyan

    2016-08-17

    UV-triggered self-healing of single microcapsules has been a good candidate to enhance the life of polymer-based aerospace coatings because of its rapid healing process and healing chemistry based on an accurate stoichiometric ratio. However, free radical photoinitiators used in single microcapsules commonly suffer from possible deactivation due to the presence of oxygen in the space environment. Moreover, entrapment of polymeric microcapsules into coatings often involves elevated temperature or a strong solvent, probably leading to swelling or degradation of polymer shell, and ultimately the loss of active healing species into the host matrix. We herein describe the first single robust SiO2 microcapsule self-healing system based on UV-triggered cationic polymerization for potential application in aerospace coatings. On the basis of the similarity of solubility parameters of the active healing species and the SiO2 precursor, the epoxy resin and cationic photoinitiator are successfully encapsulated into a single SiO2 microcapsule via a combined interfacial/in situ polymerization. The single SiO2 microcapsule shows solvent resistance and thermal stability, especially a strong resistance for thermal cycling in a simulated space environment. In addition, the up to 89% curing efficiency of the epoxy resin in 30 min, and the obvious filling of scratches in the epoxy matrix demonstrate the excellent UV-induced healing performance of SiO2 microcapsules, attributed to a high load of healing species within the capsule (up to 87 wt %) and healing chemistry based on an accurate stoichiometric ratio of the photoinitiator and epoxy resin at 9/100. More importantly, healing chemistry based on a UV-triggered cationic polymerization mechanism is not sensitive to oxygen, extremely facilitating future embedment of this single SiO2 microcapsule in spacecraft coatings to achieve self-healing in a space environment with abundant UV radiation and oxygen. PMID:27463101

  7. Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures

    PubMed Central

    Tsuchiya, Taku; Tsuchiya, Jun

    2011-01-01

    Ultrahigh-pressure phase relationship of SiO2 silica in multimegabar pressure condition is still quite unclear. Here, we report a theoretical prediction on a previously uncharacterized stable structure of silica with an unexpected hexagonal Fe2P-type form. This phase, more stable than the cotunnite-type structure, a previously postulated postpyrite phase, was discovered to stabilize at 640 GPa through a careful structure search by means of ab initio density functional computations over various structure models. This is the first evidential result of the pressure-induced phase transition to the Fe2P-type structure among all dioxide compounds. The crystal structure consists of closely packed, fairly regular SiO9 tricapped trigonal prisms with a significantly compact lattice. Additional investigation further elucidates large effects of this phase change in SiO2 on the stability of MgSiO3 and CaSiO3 at multimegabar pressures. A postperovskite phase of MgSiO3 breaks down at 1.04 TPa along an assumed adiabat of super-Earths and yields Fe2P-type SiO2 and CsCl (B2)-type MgO. CaSiO3 perovskite, on the other hand, directly dissociates into SiO2 and metallic CaO, skipping a postperovskite polymorph. Predicted ultrahigh-pressure and temperature phase diagrams of SiO2, MgSiO3, and CaSiO3 indicate that the Fe2P-type SiO2 could be one of the dominant components in the deep mantles of terrestrial exoplanets and the cores of gas giants. PMID:21209327

  8. Extracting the Density of States of Copper Phthalocyanine at the SiO2 Interface with Electronic Sum Frequency Generation.

    PubMed

    Pandey, Ravindra; Moon, Aaron P; Bender, Jon A; Roberts, Sean T

    2016-03-17

    Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc's electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ. PMID:26938148

  9. Optically stable biocompatible flame-made SiO2-coated Y2O3:Tb3+ nanophosphors for cell imaging.

    PubMed

    Sotiriou, Georgios A; Franco, Davide; Poulikakos, Dimos; Ferrari, Aldo

    2012-05-22

    Nanophosphors are light-emitting materials with stable optical properties that represent promising tools for bioimaging. The synthesis of nanophosphors, and thus the control of their surface properties, is, however, challenging. Here, flame aerosol technology is exploited to generate Tb-activated Y(2)O(3) nanophosphors (∼25 nm) encapsulated in situ by a nanothin amorphous inert SiO(2) film. The nanocrystalline core exhibits a bright green luminescence following the Tb(3+) ion transitions, while the hermetic SiO(2)-coating prevents any unspecific interference with cellular activities. The SiO(2)-coated nanophosphors display minimal photobleaching upon imaging and can be easily functionalized through surface absorption of biological molecules. Therefore, they can be used as bionanoprobes for cell detection and for long-term monitoring of cellular activities. As an example, we report on the interaction between epidermal growth factor (EGF)-functionalized nanophosphors and mouse melanoma cells. The cellular uptake of the nanophosphors is visualized with confocal microscopy, and the specific activation of EGF receptors is revealed with biochemical techniques. Altogether, our results establish SiO(2)-coated Tb-activated Y(2)O(3) nanophosphors as superior imaging tools for biological applications. PMID:22509739

  10. Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

    PubMed Central

    Sobel, Nicolas; Lukas, Manuela; Spende, Anne; Stühn, Bernd; Trautmann, Christina

    2015-01-01

    Summary Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS) reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7–1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS) confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced. PMID:25821688

  11. Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

    NASA Astrophysics Data System (ADS)

    Fang, Guo-Yong; Xu, Li-Na; Wang, Lai-Guo; Cao, Yan-Qiang; Wu, Di; Li, Ai-Dong

    2015-02-01

    Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

  12. Optically Stable Biocompatible Flame-Made SiO2-Coated Y2O3:Tb3+ Nanophosphors for Cell Imaging

    PubMed Central

    Sotiriou, Georgios A.; Franco, Davide; Poulikakos, Dimos; Ferrari, Aldo

    2013-01-01

    Nanophosphors are light-emitting materials with stable optical properties that represent promising tools for bioimaging. The synthesis of nanophosphors, and thus the control of their surface properties is, however, challenging. Here, flame aerosol technology is exploited to generate Tb-activated Y2O3 nanophosphors (~25 nm) encapsulated in situ by a nano-thin amorphous inert SiO2 film. The nanocrystalline core exhibits a bright green luminescence following the Tb3+ ion transitions, while the hermetic SiO2-coating prevents any unspecific interference with cellular activities. The SiO2-coated nanophosphors display minimal photobleaching upon imaging and can be easily functionalized through surface absorption of biological molecules. Therefore, they can be used as bio-nanoprobes for cell detection and for long-term monitoring of cellular activities. As an example, we report on the interaction between epidermal growth factor (EGF) functionalized nanophosphors and mouse melanoma cells. The cellular uptake of the nanophosphors is visualized with confocal microscopy and the specific activation of EGF receptors (EGFR) is revealed with biochemical techniques. Altogether, our results establish SiO2-coated Tb-activated Y2O3 nanophosphors as superior imaging tools for biological applications. PMID:22509739

  13. Voltage-dependent capacitance behavior and underlying mechanisms in metal-insulator-metal capacitors with Al2O3-ZrO2-SiO2 nano-laminates

    NASA Astrophysics Data System (ADS)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Ding, Shi-Jin

    2016-04-01

    Nano-laminates consisting of high-permittivity dielectrics and SiO2 have been extensively studied for radio frequency metal-insulator-metal (MIM) capacitors because of their superior voltage linearity and low leakage current. However, there are no reports on the capacitance-voltage (C-V) characteristics at a high sweep voltage range. In this work, an interesting variation in the voltage-dependent capacitance that forms a ‘ω’-like shape is demonstrated for the MIM capacitors with Al2O3/ZrO2/SiO2 nano-laminates. As the thickness ratio of the SiO2 film to the total insulator increases to around 0.15, the C-V curve changes from an upward parabolic shape to a ‘ω’ shape. This can be explained based on the competition between the orientation polarization from SiO2 and the electrode polarization from Al2O3 and ZrO2. When the SiO2 film is very thin, the electrode polarization dominates in the MIM capacitor, generating a positive curvature C-V curve. When the thickness of SiO2 is increased, the orientation polarization is enhanced and thus both polarizations are operating in the MIM capacitors. This leads to the appearance of a multiple domain C-V curve containing positive and negative curvatures. Therefore, good consistency between the experimental results and the theoretical simulations is demonstrated. Such voltage-dependent capacitance behavior is not determined by the stack structure of the insulator, measurement frequency and oscillator voltage, but by the thickness ratio of the SiO2 film to the whole insulator. These findings are helpful to engineer MIM capacitors with good voltage linearity.

  14. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy

    PubMed Central

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature. PMID:25482412

  15. CdS nanoparticles incorporated onion-like mesoporous silica films: Ageing-induced large stokes shifted intense PL emission

    NASA Astrophysics Data System (ADS)

    Mishra, Manish Kr; Mandal, Abhijit; Saha, Jony; De, Goutam

    2013-10-01

    CdS nanoparticles (NPs) were generated in onion-like ordered mesoporous SiO2 films through a modified sol-gel process using P123 as a structure directing agent. Initially Cd2+ doped (12 equivalent mol% with respect to the SiO2) mesoporous SiO2 films were prepared on glass substrate. These films after heat-treatment at 350 °C in air yielded transparent mesoporous SiO2 films having hexagonally ordered onion-like pore channels embedded with uniformly dispersed CdO NPs. The generated CdO NPs were transformed into CdS NPs after exposing the films in H2S gas at 200 °C for 2 h. The as-prepared CdS NPs incorporated mesoporous SiO2 films (transparent and bright yellow in color) showed a band-edge emission at 485 nm and a weak surface defect related emission at 530 nm. During ageing of the films in ambient condition the band-edge emission gradually weakened with time and almost disappeared after about 15 days with concomitant increase of defect related strong surface state emission band near 615 nm. This transformation was related to the decay of initially formed well crystalline CdS to relatively smaller and weakly crystalline CdS NPs with surface defects due to gradual oxidation of surface sulfide. At this condition the embedded CdS NPs show large Stokes shifted (˜180 nm) intense broad emission which could be useful for luminescent solar concentrators. The detailed process was monitored by UV-Visible, FTIR and Raman spectroscopy, XPS, XRD and TEM studies. The evolution of photoluminescence (PL) and life times of CdS/SiO2 films were monitored with respect to the ageing time.

  16. [Quantitative inversion of rock SiO2 content based on thermal infrared emissivity spectrum].

    PubMed

    Yang, Hang; Zhang, Li-Fu; Huang, Zhao-Qiang; Zhang, Xue-Wen; Tong, Qing-Xi

    2012-06-01

    The present paper used the emissivity of non-processed rocks measured by M304, a hyperspectral Fourier transform infrared (FTIR) spectroradiometer, and SiO2 content by the X-ray fluorescence spectrometry. After continuum removal and normalization, stepwise regress method was employed to select the feature bands of rocks emissivity. And then quantitative relationship between SiO2 content and continuum removal emissivity of feature bands was analysed. Based on that, by comparing twelve SiO2 indices models, the optimal model for predicting SiO2 content was built. The result showed that the SiO2 indices can predict SiO2 content efficiently, and especially the normalization silicon dioxide index (NSDI) about 11.18 and 12.36 microm is the best; compared with regression models, NSDI is simpler and has higher practicality; the result has an important application value in rock classification and SiO2 content extraction with high precision. PMID:22870650

  17. Ion implantation and diffusion of Al in a {SiO 2}/{Si} system

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Galvagno, G.; Rinaudo, S.; Raineri, V.; Franco, G.; Camalleri, M.; Gasparotto, A.; Carnera, A.; Rimini, E.

    1996-08-01

    The diffusion and segregation of ion implanted Al in SiO 2 and Si layers were studied for several experimental conditions. Al ions were implanted into SiO 2, Si and through a SiO 2 layer into Si substrates at several energies (80, 300, 650 and 6000 keV) and doses (3.4 × 10 14-1 × 10 15 cm -2). The Al diffusion coefficient in SiO 2 was measured at 1200°C for times up to 5 days, and it results five orders of magnitude lower than in Si. The experiments show that the Al atoms implanted into Si do not out-diffuse during thermal treatments from the SiO 2 capping layer, but segregate at the {SiO 2}/{Si} interface. The high segregation coefficient gives rise to a trapping of Al into the oxide layer comparable to the out-diffusion of Al from uncapped Si substrates. The determined parameters for Al diffusion and segregation in the {SiO 2}/{Si} system were introduced in a simulation code to calculate the Al diffusion profiles which result in agreement with the experimental data.

  18. Phase Equilibria Studies in the SiO2-K2O-CaO System

    NASA Astrophysics Data System (ADS)

    Chen, Mao; Hou, Xinmei; Chen, Junhong; Zhao, Baojun

    2016-06-01

    Phase equilibria in the SiO2-K2O-CaO system have been experimentally investigated in the SiO2-rich area. High-temperature equilibration, rapid quenching, and electron probe X-ray microanalysis (EPMA) techniques have been used in this study. K2O may vaporize during EPMA measurements causing significant uncertainties. In the present study, optimum EPMA operating conditions have been determined in order to accurately measure K2O concentrations in the quenched samples. The compositions of all phases present in the quenched sample were measured using EPMA with optimum operating parameters. The following primary phase fields were identified in the composition range investigated: SiO2, CaO·SiO2, 2CaO·SiO2, K2O·2CaO·2SiO2, and K2O·6CaO·4SiO2. The isotherms between 1273 K and 1473 K (1000 °C and 1200 °C) in these primary phase fields have been determined. The presence of the compounds K2O·2CaO·2SiO2 and K2O·6CaO·4SiO2 has been confirmed.

  19. Magnetic properties of isolated Co nanoparticles in SiO 2 capsule prepared with reversed micelle

    NASA Astrophysics Data System (ADS)

    Haeiwa, Tetsuji; Segawa, Kazuhiro; Konishi, Kenji

    Magnetic properties and thermal stability of cobalt nanoparticles encapsulated in SiO 2 prepared with the reversed micelle technique with various w were investigated. The average diameters of the Co nanoparticles and SiO 2 capsules were about 2.9 and about 5.2 nm. The magnetization curves of Co nanoparticles exhibit superparamagnetic nature. After annealing up to 673 K in vacuum, the magnetization increases by a factor of 2.4 and the average diameter of the Co particles increases by a factor of 1.3, although shape and size of the SiO 2 capsules were kept.

  20. Fabrication of SiO2 Microdisk Arrays for Optics and Light Trapping Experiments

    SciTech Connect

    Saraf, Laxmikant V.; Engelhard, Mark H.; Lea, Alan S.

    2007-02-08

    We present a simple silicon based microfabrication process that produces an array of SiO2 microdisks using UV lithography. High-resolution SEM images of these structures indicate a smooth outer microdisk cavity surface. Photoemission measurements were performed at different spots on the microdisk and compared with measurements inside the cavity. A silicon to oxygen atomic concentration ratio of 1:2 obtained during depth profiling confirms that the entire microdisk is made up of stoichometric SiO2. In contrast, the inner cavity is mostly silicon with native oxide on top. We discuss the usefulness of SiO2 microdisks in optics for light trapping experiments.

  1. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  2. Nitridation of SiO2 for surface passivation

    NASA Technical Reports Server (NTRS)

    Lai, S. K. C.

    1985-01-01

    An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

  3. Effect of SiO2 nanoparticle doping on electro-optical properties of polymer dispersed liquid crystal lens for smart electronic glasses

    NASA Astrophysics Data System (ADS)

    Kim, Eunju; Liu, Yang; Hong, Sung-Jei; Han, Jeong In

    2015-03-01

    In this paper, SiO2 nanoparticle doped polymer dispersed liquid crystal (PDLC) lenses were made from a mixture of prepolymer, E7 liquid crystal and SiO2 nanoparticles by the polymerization induced phase separation (PIPS) process for smart electronic glasses with auto-shading and auto-focusing functions. Electro-optical properties of doped and undoped samples including transmittance, driving voltage, contrast ratio and slope of the linear region of the transmittance-voltage were measured, compared and analyzed. Driving voltage of SiO2 nanoparticle doped PDLC lenses moderately improved. But the slope of linear region, response time and contrast ratio deteriorated, especially the latter two. It can be assumed that these doping effects were due to the mechanistic change from liquid-gel separation to liquid-liquid separation by the fast heterogeneous nucleation rate caused by the increased nucleation at the surface of SiO2 nanoparticles. The marked deteriorations of falling response time and contrast ratio were due to well defined liquid crystal molecules in LC droplets, which induced slow and imperfect random rearrangement of LC molecules at the off state.

  4. Reactive HiPIMS deposition of SiO2/Ta2O5 optical interference filters

    NASA Astrophysics Data System (ADS)

    Hála, Matěj; Vernhes, Richard; Zabeida, Oleg; Klemberg-Sapieha, Jolanta-Ewa; Martinu, Ludvik

    2014-12-01

    In this contribution, based on the detailed understanding of the processes at the target during reactive high power impulse magnetron sputtering (HiPIMS), we demonstrate the deposition of both low- and high-index films and their implementation in optical interference filters with enhanced performance. We first investigate strategies for stabilizing the arc-free HiPIMS discharges above Si and Ta targets in the presence of oxygen. We show that hysteresis can be suppressed for these two target materials by suitable pulse-management strategies, ensuring good process stability without having to rely on any feedback control. Afterwards, we discuss the room temperature deposition of optically transparent SiO2 and Ta2O5 single layers as well as the fabrication of SiO2/Ta2O5 stacks such as 7 layer Bragg reflectors and 11 layer Fabry-Perot interference filters. We also analyze the optical and mechanical characteristics of these various coatings and compare them with their counterparts obtained by radio-frequency magnetron sputtering (RFMS). Among other findings, we observe that the coatings prepared by HiPIMS present higher refractive index and lower surface roughness values, suggesting a denser microstructure. In addition, the HiPIMS-deposited optical filters exhibit a better optical performance than their counterparts fabricated by RFMS, but it is especially with respect to the mechanical properties such as scratch resistance and low residual stress, that the coatings prepared by HiPIMS present the most dramatic improvements (up to 42% and 72% enhancement, respectively). Finally, we show that the stress values obtained for the HiPIMS-deposited SiO2 and Ta2O5 coatings are lower than for other deposition techniques commonly used in the fabrication of optical interference filters.

  5. Synthesis and characterization of ion-implanted Pt nanocrystals in SiO 2

    NASA Astrophysics Data System (ADS)

    Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L. L.; Llewellyn, D. J.; Cookson, D. J.; Ridgway, M. C.

    2007-04-01

    Pt nanocrystals (NCs) produced by ion implantation in SiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 1016 cm-2 and were followed by annealing in forming gas (95% N2, 5% H2) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.

  6. Large-scale synthesis of WSe2 atomic layers on SiO2/Si

    NASA Astrophysics Data System (ADS)

    Cao, Hui-Wen; Zhao, Hai-Ming; Xin, Xin; Shao, Peng-Zhi; Qi, Han-Yu; Jian, Mu-Qiang; Zhang, Ying-Ying; Yang, Yi; Ren, Tian-Ling

    2016-06-01

    We report a systematic study of large-scale growth of high-quality WSe2 atomic layers directly on SiO2/Si substrates using a convenient method. Various parameters, especially growth temperatures, flow rate of carrier gas and tube pressure, are investigated in affecting the properties of as-grown WSe2 flakes in terms of their sizes, shapes and thickness. The pre-annealing step is demonstrated to be a key role in achieving the large-scale growth. Under an optimized condition, the lateral size of triangular single-crystal monolayer WSe2 is up to 30 μm and the area of the monolayer thin film can be up to 0.25 mm2. And some other interesting features, such as nanoflowers, are observed, which are a promising for catalyzing research. Raman spectrum and microphotoluminescence indicate distinct layer dependent efficiency. Auger electron spectroscopy (AES) studies demonstrate the atomic concentration of the as-grown WSe2. Electrical transport further shows that the p-type WSe2 field-effect transistors exhibit excellent electrical properties with carrier mobility of ˜64 cm2ṡV‑1ṡs‑1 and current on/off ratio over 105. These results are comparable to the exfoliated materials.

  7. Synthesis for Magnetic Mesoporous Fe3O4-SiO2 Composites and Heterogeneous Fenton Degradation of Methyl Blue

    NASA Astrophysics Data System (ADS)

    Xie, Huanling; Zhang, Tengyun

    2014-12-01

    In this work, we presented a facile, one-step preparation for magnetic mesoporous Fe3O4-SiO2 composites under closely neutral conditions by an evaporation-induced self-assembly (EISA) and adding 1,3,5-TMB as co-solvent approach. The resulting samples were characterized by X-ray diffraction, N2 adsorption measurement, FT-IR and SEM. Magnetic mesoporous composites and H2O2 form heterogeneous Fenton in order to removal methylene blue as the dye wastewater model object. The catalysts showed high catalytic activity and stability in the decolorization of methlye blue.

  8. Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

    NASA Technical Reports Server (NTRS)

    Johannes, Daniel; Webber, Robert

    2013-01-01

    across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

  9. Rapid growth of SiO2 nanowires on carbon fiber

    NASA Astrophysics Data System (ADS)

    Ma, Junfeng; Cai, Shan; Lan, Xuena

    2016-03-01

    We report a novel preparing route to SiO2 nanowires, which can be regarded as a modified electrochemical process, where a single C fiber is used as a substrate on which SiO2 nanowires grow, and a heating source, and tetraethyl orthosilicate (TEOS) as an electrolyte and cooling medium. The preparing process can proceed well at ambient temperature and pressure. A good quality of SiO2 nanowires can be easily obtained at 160V for only 10s, and exhibit excellent photoluminescence (PL) property. Our study also shows that reaction time, current intensity, and TEOS concentration mainly govern the formation and growth of SiO2 nanowires. The morphology, structure and composition of the as-synthesized samples were characterized by SEM, XPS, Raman, FTIR, and PL, respectively.

  10. Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation.

    PubMed

    Nguyen, Truong Khang; Le, Khai Q; Canimoglu, Adil; Can, Nurdogan

    2016-09-01

    In this study, we investigate optical properties of metal nanoparticle crystals fabricated by implanting copper (Cu) ions into single silica (SiO2) crystals with 400keV at various ion doses. The Cu implanted SiO2 (SiO2:Cu) crystal produces a broadband luminescence emission, ranging from blue to yellow, and having a blue luminescence peak at 546nm. Such anomalous luminescence emission bands suggest that the ion implantation may give rise to aggregation of Cu nanoparticles in the host matrix. The boundary element method-based modelling of a given Cu nanoparticle aggregation was employed to justify the broadband luminescence emission. Formation of Cu nanoparticles in SiO2 is predicted through their optical absorption data. The experimental results are compared with results of Mie calculations and we observe that the higher ion dose produces the larger particle size. PMID:27344525

  11. Diffusion of 18 elements implanted into thermally grown SiO2

    NASA Astrophysics Data System (ADS)

    Francois-Saint-Cyr, H. G.; Stevie, F. A.; McKinley, J. M.; Elshot, K.; Chow, L.; Richardson, K. A.

    2003-12-01

    Diffusion data are presented for 18 elements implanted in SiO2 layers thermally grown on silicon and annealed at temperatures ranging from 300 to 1000 °C. Most species studied, (e.g., Be, B, Al, Sc, Ti, V, Zn, Ga, and Mo), showed negligible diffusion over the examined temperature range. In general, this study has shown that the diffusivity of dopants or impurities in SiO2 is significantly smaller than that in silicon. However we also observed that several elements (e.g., Rb and In) have a higher diffusivity in SiO2 than in Si. Because Ga and In are both used as sources for focused ion beam analyses, the lack of Ga diffusion and the movement of In in SiO2 is of interest.

  12. Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

    NASA Astrophysics Data System (ADS)

    Ge, Jie; Yang, Yi; Li, Xiao-Ning; Ren, Tianling

    2014-07-01

    To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF3/H2 mixture is used for effective etching of SiO2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO2, diblock copolymer and Pt. Etch properties of SiO2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO2 layer to Pt layer was discussed.

  13. Fabrication and characterization of suspended SiO2 ridge optical waveguides and the devices.

    PubMed

    Chen, Pengxin; Zhu, Yunpeng; Shi, Yaocheng; Dai, Daoxin; He, Sailing

    2012-09-24

    Novel suspended SiO(2) ridge optical waveguides on silicon are fabricated and characterized. The present suspended SiO(2) ridge optical waveguide has a SiO(2) ridge core surrounded by air. The propagation loss and the bend loss measured are about 0.385dB/cm and 0.037dB/90° respectively for the fabricated 1 μm-wide waveguides with a bending radius of 100 μm when operating at the wavelength of 1550 nm. With the present suspended SiO(2) optical waveguides, a small racetrack resonator with a radius of 100 μm is also demonstrated and the measured Q-factor is about 3160. PMID:23037402

  14. Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

    PubMed Central

    Shim, Kyu Hwan; Hulme, John; Maeng, Eun Ho; Kim, Meyoung-Kon; An, Seong Soo A

    2014-01-01

    A multitude of nanoparticles, such as titanium oxide (TiO2), zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were found for arginine-coated positively charged SiO2 nanoparticles than for the negatively charged nanoparticles. The proteins identified as bound in the corona from SiO2 nanoparticles were further analyzed with ClueGO, a Cytoscape plugin used in protein ontology and for identifying biological interaction pathways. Proteins bound on the surface of nanoparticles may affect functional and conformational properties and distributions in complicated biological processes. PMID:25565838

  15. Properties of cathodoluminescence for cryogenic applications of SiO2-based space observatory optics and coatings

    NASA Astrophysics Data System (ADS)

    Evans Jensen, Amberly; Dennison, J. R.; Wilson, Gregory; Dekany, Justin; Bowers, Charles W.; Meloy, Robert; Heaney, James B.

    2013-09-01

    Disordered thin film SiO2/SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (~60-200 nm) SiO2/SiOx optical coatings on reflective metal substrates over a range of sample temperatures (~40-400 K) and emission wavelengths (~260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UV/VIS/NIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

  16. Properties of Cathodoluminescence for Cryogenic Applications of SiO2-based Space Observatory Optics and Coatings

    NASA Technical Reports Server (NTRS)

    Evans, Amberly; Dennison, J.R.; Wilson, Gregory; Dekany, Justin; Bowers Charles W.; Meloy, Robert; Heaney, James B.

    2013-01-01

    Disordered thin film SiO2SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high-energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (60-200 nm) SiO2SiOx optical coatings on reflective metal substrates over a range of sample temperatures (40-400 K) and emission wavelengths (260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UVVISNIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

  17. Digital control of SiO(2)-TiO(2) mixed-metal oxides by pulsed PECVD.

    PubMed

    Rowlette, Pieter C; Wolden, Colin A

    2009-11-01

    Pulsed plasma enhanced chemical vapor deposition (PECVD) was used to deliver digital control of SiO(2), TiO(2), and SiO(2)-TiO(2) composites at room temperature. Alloy formation was investigated by maintaining constant delivery of TiCl(4) while varying the SiCl(4) flow. Film composition was assessed by spectroscopic ellipsometry, XPS, and FTIR. It is shown that the alloy composition and refractive index can be tuned continuously over a broad range using pulsed PECVD. The two precursors were found to be highly compatible, with the alloy growth rate simply reflecting the sum of the contributions from the two individual precursors. Digital control over both thickness and composition was demonstrated through the production of antireflection (AR) coatings for crystalline silicon. AR coatings were synthesized on the basis of optimized designs, and in each case the measured optical performance was found to be in excellent agreement with model predictions. The average reflectance across the visible spectrum was reduced from 39% for uncoated wafers to 2.5% for the three-layer AR coating. PMID:20356131

  18. Microstructure and magnetic properties of CoCrPt -SiO2 perpendicular recording media with synthetic nucleation layers

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Piramanayagam, S. N.; Wong, Seng Kai; Kay, Yew Seng

    2008-04-01

    Thermally stable, highly textured CoCrPt -SiO2 perpendicular magnetic recording media with ˜6nm size exchange decoupled grains and tight grain size distribution were prepared on synthetic nucleation layers. The media structure consisted of 14nm thick CoCrPt -SiO2 recording layer on one Ru intermediate layer. For these films, insertion of a synthetic nucleation layer directly under the recording layer was seen to reduce the grain sizes from 6.7to6.2nm and grain size distribution from 17% to 14%. Significant reduction in the intergranular exchange coupling interactions could be achieved while improving magnetic properties. The crystallographic texture of the recording layer remained strongly (00ṡ2) oriented with the dispersion Δθ50 below 3.7°. Isothermal remanence magnetization and thermal stability behavior were studied. A model that describes the role of the synthetic nucleation layer in affecting the grain growth and magnetic properties of the recording layer is presented to understand these observations.

  19. Preparation and Characterization of SiO 2/TiO 2 composite microspheres with microporous SiO 2 core/mesoporous TiO 2 shell

    NASA Astrophysics Data System (ADS)

    Zhao, Li; Yu, Jiaguo; Cheng, Bei

    2005-06-01

    SiO 2/TiO 2 composite microspheres with microporous SiO 2 core/mesoporous TiO 2 shell structures were prepared by hydrolysis of titanium tetrabutylorthotitanate (TTBT) in the presence of microporous silica microspheres using hydroxypropyl cellulose (HPC) as a surface esterification agent and porous template, and then dried and calcined at different temperatures. The as-prepared products were characterized with differential thermal analysis and thermogravimetric (DTA/TG), scanning electron microscopy (SEM), X-ray diffraction (XRD), nitrogen adsorption. The results showed that composite particles were about 1.8 μm in diameter, and had a spherical morphology and a narrow size distribution. Uniform mesoporous titania coatings on the surfaces of microporous silica microspheres could be obtained by adjusting the HPC concentration to an optimal concentration of about 3.2 mmol L -1. The anatase and rutile phase in the SiO 2/TiO 2 composite microspheres began to form at 700 and 900 °C, respectively. At 700 °C, the specific surface area and pore volume of the SiO 2/TiO 2 composite microspheres were 552 and 0.652 mL g -1, respectively. However, at 900 °C, the specific surface area and pore volume significantly decreased due to the phase transformation from anatase to rutile.

  20. Space weathering of silicates simulated by successive laser irradiation: In situ reflectance measurements of Fo90, Fo99+, and SiO2

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

    2016-02-01

    Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of "nanophase" metallic Fe (npFe0) grains, 20-50 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100-400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laser pulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

  1. Space Weathering of Silicates Simulated by Successive Laser Irradiation: in Situ Reflectance Measurements of Fo90, Fo99+, and SiO2

    NASA Technical Reports Server (NTRS)

    Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

    2016-01-01

    Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of "nanophase" metallic Fe (npFe0) grains, 20-50 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100-400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laser pulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

  2. Effect of helium on structure and compression behavior of SiO2 glass

    PubMed Central

    Shen, Guoyin; Mei, Qiang; Prakapenka, Vitali B.; Lazor, Peter; Sinogeikin, Stanislav; Meng, Yue; Park, Changyong

    2011-01-01

    The behavior of volatiles is crucial for understanding the evolution of the Earth’s interior, hydrosphere, and atmosphere. Noble gases as neutral species can serve as probes and be used for examining gas solubility in silicate melts and structural responses to any gas inclusion. Here, we report experimental results that reveal a strong effect of helium on the intermediate range structural order of SiO2 glass and an unusually rigid behavior of the glass. The structure factor data show that the first sharp diffraction peak position of SiO2 glass in helium medium remains essentially the same under pressures up to 18.6 GPa, suggesting that helium may have entered in the voids in SiO2 glass under pressure. The dissolved helium makes the SiO2 glass much less compressible at high pressures. GeO2 glass and SiO2 glass with H2 as pressure medium do not display this effect. These observations suggest that the effect of helium on the structure and compression of SiO2 glass is unique. PMID:21444785

  3. Self-cleaning and superhydrophilic wool by TiO2/SiO2 nanocomposite

    NASA Astrophysics Data System (ADS)

    Pakdel, Esfandiar; Daoud, Walid A.; Wang, Xungai

    2013-06-01

    Wool fabrics were functionalised using TiO2 and TiO2/SiO2 nanocomposites through a low-temperature sol-gel method. Titanium terta isopropoxide (TTIP) and tetra ethylorthosilicate (TEOS) were employed as precursors of TiO2 and SiO2, respectively. Nanocomposite sols were devised based on three molar ratio percentages of TiO2/SiO2 70:30, 50:50, and 30:70 to investigate the role of each component. The self-cleaning and hydrophilicity of wool fabrics were analysed based on the removal of coffee stain under UV and water droplet contact angle measurements, respectively. It was observed that applying TiO2/SiO2 50:50 and 30:70 sols to wool rendered the fabric superhydrophilic. Fabrics functionalised with TiO2/SiO2 30:70 showed the highest efficiency in stain removal, followed by samples functionalised with TiO2/SiO2 50:50.

  4. Scanning capacitance microscope study of a SiO2/Si interface modified by charge injection

    NASA Astrophysics Data System (ADS)

    Tomiye, H.; Yao, T.

    We have investigated the local electrical properties of an SiO2/Si structure using a scanning capacitance microscope (SCaM) combined with an atomic force and a scanning tunneling microscope (AFM and STM). The electrical properties of the Si substrate and the SiO2/Si interface vary with position. In this experiment we have injected charge into the SiO2 and investigated the nature of charge storage at the SiO2/Si interface. We have used the combined microscope to apply a pulse to the SiO2/Si sample, causing charge to be trapped in the SiO2/Si interface. We could clearly detect the local variation of interface charge in a non-destructive manner using the SCaM and simultaneously by capacitance-voltage (C-V) characterization. The volume of the C-V curve shift along the voltage axis due to trapped charges is dependent upon the density of the trapped charges. In doing this experiment we show one of the many possible applications of the combined SCaM/AFM/STM.

  5. Combustion synthesis of SiO2 on the aluminum plate

    NASA Astrophysics Data System (ADS)

    Yeh, C. L.; Zhao, E.; Ma, H. K.

    2001-03-01

    The approach of utilizing combustion synthesis to make fine particles of SiO2, Al2O3 and TiO2 is a quite modern technology. Through the chemical reaction in post-flame region, fine SiO2 particles can be formed with high purity on plate surface. Therefore, the combustion synthesis of SiO2 powders is an important area for further research and development, especially for the application of SiO2 in the semiconductor industry. This investigation proposes an experimental approach (i.e., a gas-phase combustion synthesis) using two different kinds of organic compounds, Hexamethyldisilazane (HMDSA) and Hexamethyldisioxane (HMDSO), as the silicon precursors. A premixed gas burner is chosen with C3H8 as fuel, air as oxidant and part of the air was used as the carrying gas to entrain HMDSA/HMDSO vapor into the combustible mixture. Observations show that the C3H8/air flame changed color from a pale-blue flame to light yellow and then orange when different amounts of precursors were introduced. Through the chemical reaction in the post-flame region, fine SiO2 particles were formed in the gas phase and then quenched and collected on an aluminum flat plate. The objective of this paper is to study the effects of HMDSO and HMDSA concentrations and flame temperatures on the synthesis of SiO2 particles.

  6. Effect of helium on structure and compression behavior of SiO2 glass.

    PubMed

    Shen, Guoyin; Mei, Qiang; Prakapenka, Vitali B; Lazor, Peter; Sinogeikin, Stanislav; Meng, Yue; Park, Changyong

    2011-04-12

    The behavior of volatiles is crucial for understanding the evolution of the Earth's interior, hydrosphere, and atmosphere. Noble gases as neutral species can serve as probes and be used for examining gas solubility in silicate melts and structural responses to any gas inclusion. Here, we report experimental results that reveal a strong effect of helium on the intermediate range structural order of SiO(2) glass and an unusually rigid behavior of the glass. The structure factor data show that the first sharp diffraction peak position of SiO(2) glass in helium medium remains essentially the same under pressures up to 18.6 GPa, suggesting that helium may have entered in the voids in SiO(2) glass under pressure. The dissolved helium makes the SiO(2) glass much less compressible at high pressures. GeO(2) glass and SiO(2) glass with H(2) as pressure medium do not display this effect. These observations suggest that the effect of helium on the structure and compression of SiO(2) glass is unique. PMID:21444785

  7. Enhanced Formation of Si Nanocrystals in SiO2 by Light-Filtering Rapid Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Chen, Xiaobo; Chen, Guangping

    2015-04-01

    In this work, silicon-rich oxide (SRO) films with designed thickness of 100 nm were deposited by a bipolar pulse and radio frequency magnetron co-sputtering. For comparison, the samples were then treated in a nitrogen atmosphere by conventional rapid thermal annealing (CRTA) or light-filtering rapid thermal annealing (LRTA) at 900-1100°C for 2 min. Raman spectra, grazing incident X-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurements, and current density-voltage measurements were carried out to analyze the microstructural and electrical properties of samples. Compared with the control sample using CRTA method, the crystalline volume fraction and number density of Si nanocrystals (SiNCs) in silicon oxide prepared by LRTA were greatly increased. The quantum effects of the short wave-length light (less than 800 nm) of these tungsten halogen lamps during the rapid thermal annealing process have negative effects on the formation of SiNCs in SiO2 films. SiNCs with crystal volume fraction of 73%, average size of 2.53 nm, and number density of 1.1 × 1012 cm-2 embedded in the amorphous SiO2 matrix can be formed by LRTA at 1100°C. Enhancement of more than one order of magnitude in conductivity and higher current density were obtained from the LRTA annealed sample compared to the CRTA annealed sample. The improvements in conductivity and current density were attributed to the high density SiNCs. Our results show that the LRTA method is a suitable annealing tool for the formation of SiNC in thin SiOx films.

  8. Fe effect on the optical properties of TiO2:Fe2O3 nanostructured composites supported on SiO2 microsphere assemblies.

    PubMed

    Peña-Flores, Jesús I; Palomec-Garfias, Abraham F; Márquez-Beltrán, César; Sánchez-Mora, Enrique; Gómez-Barojas, Estela; Pérez-Rodríguez, Felipe

    2014-01-01

    The effect of Fe ion concentration on the morphological, structural, and optical properties of TiO2 films supported on silica (SiO2) opals has been studied. TiO2:Fe2O3 films were prepared by the sol-gel method in combination with a vertical dip coating procedure; precursor solutions of Ti and Fe were deposited on a monolayer of SiO2 opals previously deposited on a glass substrate by the same procedure. After the dip coating process has been carried out, the samples were thermally treated to obtain the TiO2:Fe2O3/SiO2 composites at the Fe ion concentrations of 1, 3, and 5 wt%. Scanning electron microscopy (SEM) micrographs show the formation of colloidal silica microspheres of about 50 nm diameter autoensembled in a hexagonal close-packed fashion. Although the X-ray diffractograms show no significant effect of Fe ion concentration on the crystal structure of TiO2, the μ-Raman and reflectance spectra do show that the intensity of a phonon vibration mode and the energy bandgap of TiO2 decrease as the Fe(+3) ion concentration increases. PMID:25276103

  9. Fe effect on the optical properties of TiO2:Fe2O3 nanostructured composites supported on SiO2 microsphere assemblies

    PubMed Central

    2014-01-01

    The effect of Fe ion concentration on the morphological, structural, and optical properties of TiO2 films supported on silica (SiO2) opals has been studied. TiO2:Fe2O3 films were prepared by the sol-gel method in combination with a vertical dip coating procedure; precursor solutions of Ti and Fe were deposited on a monolayer of SiO2 opals previously deposited on a glass substrate by the same procedure. After the dip coating process has been carried out, the samples were thermally treated to obtain the TiO2:Fe2O3/SiO2 composites at the Fe ion concentrations of 1, 3, and 5 wt%. Scanning electron microscopy (SEM) micrographs show the formation of colloidal silica microspheres of about 50 nm diameter autoensembled in a hexagonal close-packed fashion. Although the X-ray diffractograms show no significant effect of Fe ion concentration on the crystal structure of TiO2, the μ-Raman and reflectance spectra do show that the intensity of a phonon vibration mode and the energy bandgap of TiO2 decrease as the Fe+3 ion concentration increases. PMID:25276103

  10. High mobility n-channel metal-oxide-semiconductor field-effect transistors based on SiO2-InP interface

    NASA Astrophysics Data System (ADS)

    Pande, K. P.; Nair, V. K. R.

    1984-04-01

    It is pointed out that InP offers promising possibilities for microwave and high speed digital circuit applications due to its high saturation drift velocity, low ionization coefficients, and high mobility. A description is presented of a novel plasma-enhanced chemical vapor deposition (CVD) process for the deposition of device quality SiO2 at temperatures lower than 300 C. High quality SiO2 gate dielectric films with stoichiometric compositions were grown on p-InP substrates using a novel plasma-enhanced CVD process. The obtained results indicate that the considered process coupled with a high quality semiinsulating InP substrate may lead to a good quality interface with the characteristics which are required for stable MOSFET devices.

  11. Transmission Spectra and Generation of Terahertz Pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe, and GaSe:S Structures

    NASA Astrophysics Data System (ADS)

    Bereznaya, S. A.; Zarubin, A. N.; Korotchenko, Z. V.; Prudaev, I. A.; Red'kin, R. A.; Sarkisov, S. Yu.; Tolbanov, O. P.

    2015-12-01

    Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and TiO2 layers on the surface of GaSe crack, while the Ga2O3 compound forms perfect films. A comparison of the transmission spectra and generation efficiency of terahertz pulses was made for the SiO2-GaSe, TiO2-GaSe, and Ga2O3-GaSe structures and for the GaSe:S 0.9 wt % and GaSe:S 7 wt % crystals. It was found that an increase in the concentration of sulfur in the GaSe:S crystals results in a decrease in the efficiency of generation of terahertz radiation by optical rectification of femtosecond laser pulses. Among the films deposited on the surface of GaSe, the SiO2 film has the least impact on the efficiency of generation.

  12. Design and fabrication of a large area freestanding compressive stress SiO2 optical window

    NASA Astrophysics Data System (ADS)

    Van Toan, Nguyen; Sangu, Suguru; Ono, Takahito

    2016-07-01

    This paper reports the design and fabrication of a 7.2 mm  ×  9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm  ×  9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.

  13. Structural color in porous, superhydrophilic, and self-cleaning SiO2/TiO2 Bragg stacks.

    PubMed

    Wu, Zhizhong; Lee, Daeyeon; Rubner, Michael F; Cohen, Robert E

    2007-08-01

    Thin-film Bragg stacks exhibiting structural color have been fabricated by a layer-by-layer (LbL) deposition process involving the sequential adsorption of nanoparticles and polymers. High- and low-refractive-index regions of quarter-wave stacks were generated by calcining LbL-assembled multilayers containing TiO(2) and SiO(2) nanoparticles, respectively. The physical attributes of each region were characterized by a recently developed ellipsometric method. The structural color characteristics of the resultant nanoporous Bragg stacks could be precisely tuned in the visible region by varying the number of stacks and the thickness of the high- and low-refractive-index stacks. These Bragg stacks also exhibited potentially useful superhydrophilicity and self-cleaning properties. PMID:17583907

  14. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors

    NASA Astrophysics Data System (ADS)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-10-01

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02987e

  15. Structure compatibility of TiO2 and SiO2 surfaces

    NASA Astrophysics Data System (ADS)

    Tokarský, Jonáš; Čapková, Pavla

    2013-11-01

    A simple method for the estimation of the most suitable mutual crystallographic orientations of TiO2 nanoparticles anchored on SiO2 substrate is presented in this work. Number of overlapping titanium and oxygen atoms creating atomic pairs can be used to quantify the structure compatibility. These atomic pairs are obtained directly from non-optimized TiO2 and SiO2 atomic planes. The descriptions of algorithms being implemented as scripts into the MATLAB environment in order to make the method more effective are also provided. This method can help with the selection of the most promising (h k l) planes of TiO2 and SiO2 adjacent surfaces and the outputs are in good agreement with results of molecular modeling of TiO2 nanoparticles anchored on SiO2 surfaces within the meaning of ability to determine the optimized models with the highest and the lowest TiO2-SiO2 adhesion energies. To the best of our knowledge, there is no other such simple and efficient method providing this information, which is very important for molecular modeling of nanoparticle-crystalline substrate systems.

  16. Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

    PubMed

    Tseng, Kuang-Hung; Chen, Kuan-Lung

    2012-08-01

    This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding. PMID:22962749

  17. Corrosion resistance enhancement of Ni-P-nano SiO2 composite coatings on aluminum

    NASA Astrophysics Data System (ADS)

    Sadreddini, Sina; Afshar, Abdollah

    2014-06-01

    In this study, the influences of different concentrations of SiO2 nano sized particles in the bath on deposition rate, surface morphology and corrosion behavior of Ni-P-SiO2 Composite coatings were investigated. The deposition rate of coating was influenced by incorporation of SiO2 particles. The microstructure was investigated with field emission scanning electron microscopy (FESEM). The amount of SiO2 was examined by Energy Dispersive Analysis of X-Ray (EDX) and amount of SiO2 nanoparticles co-deposited reached a maximum value at 4.5 %wt. Corrosion behavior of coated aluminum was evaluated by electrochemical impedance spectroscopy (EIS) and polarization techniques. The results illustrated that the corrosion rate decreases (6.5-0.6 μA/cm2) and the corrosion potential increases (-0.64 to -0.3) with increasing the quantity of the SiO2 nanoparticles in the bath. Moreover, Ni-p-SiO2 nano-composite coating possesses less porosity than that in Ni-P coating, resulting in improving corrosion resistance.

  18. Solid state NMR of SiO 2 nanotube coated ammonium tartrate crystal

    NASA Astrophysics Data System (ADS)

    Lim, A. R.; Schueneman, G. T.; Novak, B. M.

    1999-04-01

    Ammonium tartrate crystal and SiO 2 nanotube coated ammonium tartrate crystal were studied by 13C CP/MAS NMR, and the structure of two samples were verified using the 13C NMR spectrum. The spin-lattice relaxation times for the carbons in the rotating frame, T1 ρ, have been measured as a function of temperature. All relaxation times of the carbons in the two materials undergo slow motions, i.e. motions on the slow side of the T1 ρ minimum. From these relaxation times, we determine the activation energy for the ammonium tartrate crystal and SiO 2 nanotube coated ammonium tartrate crystal, respectively. The activation energies for the SiO 2 nanotube coated ammonium tartrate crystal were found to be generally higher than those of ammonium tartrate crystal. We think that the higher activation energy for the hydrocarbon in the SiO 2 nanotube coated ammonium tartrate crystal is because of the bonding between the oxygen in the SiO 2 nanotube and the hydroxyl group of the ammonium tartrate crystal.

  19. Broadband antireflection for a high-index substrate using SiN x /SiO2 by inductively coupled plasma chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Lim, Kim Peng; Ng, Doris K. T.; Wang, Qian

    2016-03-01

    This paper presents the development of broadband antireflection coating for a high-index substrate such as Si using SiN x /SiO2 by inductively coupled plasma chemical vapour deposition (ICP-CVD). The thin-film design employs a simulated annealing method for a minimal average reflectance over the wavelength range and incidence angles involved, which gives the optimized refractive index and thickness of each layer of the thin-film stack under different layer numbers. Using ICP-CVD, the SiN x material system is optimized by tuning the SiH4/N2 gas ratio. The corresponding thin-film characterization shows the precise refractive index/film thickness control in deposition, and the deposited film also has a low absorption coefficient and smooth surface. The double-layer SiN x /SiO2 coating with the optimized refractive index and thickness for broadband antireflection is demonstrated experimentally. The average reflectance of the Si surface is reduced from ~32% to ~3.17% at normal incidence for a wavelength range from 400 to 1100 nm.

  20. Preliminary results on the photo-transferred thermoluminescence from Ge-doped SiO2 optical fiber

    NASA Astrophysics Data System (ADS)

    Zulkepely, Nurul Najua; Amin, Yusoff Mohd; Md Nor, Roslan; Bradley, D. A.; Maah, Mohd Jamil; Mat Nawi, Siti Nurasiah; Wahib, Nur Fadira

    2015-12-01

    A study is made of photo-transferred thermoluminescence (PTTL), the TL being induced by transferring charge carriers from deeper to more superficial traps through energetic light exposure. Potential applications include dose reassessment in radiation dosimetry and also as a useful tool for dating. With incomplete emptying of deep traps following first readout, subsequent UV exposure is shown to lead to charge transfer to more shallow traps. Using Ge-doped SiO2 optical fibers exposed to 60Co gamma rays, the PTTL from the medium has been characterized in terms of the stimulation provided by exposure to a UV lamp and duration of exposure, maximum read-out temperature and pre-gamma irradiation dose. Ge-doped SiO2 optical fibers of flat cross-sectional shape have been used in this study. The efficiency of dose reassessment was compared to that of the highly popular phosphor-based TL detector TLD-100. Results show the maximum temperature of readout to have no measurable effect on the PTTL signal. For doses from 20 to 500 cGy, the method is shown to be effective using a UV lamp of wavelength 254 nm, also being indicative of potential application for doses on either side of the range currently investigated. A study was also made of the effect of UV exposure time on PTTL, seeking to determine the greatest accessible sensitivity and lowest measurable dose.

  1. Effects of charge and size on condensation of supersaturated water vapor on nanoparticles of SiO2.

    PubMed

    Chen, Chin-Cheng; Cheng, Hsiu-Chin

    2007-01-21

    The effects of size and charge on the condensation of a supersaturated water vapor on monodisperse nanoparticles of SiO(2) were investigated in a flow cloud chamber. The dependences of the critical supersaturation S(cr) on particle size at diameters of 10, 12, and 15 nm as well as on charge and charge polarity are determined experimentally. A novel electrospray aerosol generator was developed to generate a high concentration of SiO(2) nanoparticles of less than 10 nm by electrospraying silicon tetraethoxide (STE) ethanol solution followed by the thermal decomposition of STE. The effects of liquid flow rate, liquid concentration, flow rate of carrier gas, and liquid conductivity on the particle size distribution and concentration were examined. For charged particles, the nucleation occurs at a critical supersaturation S(cr) lower than that on neutral particles, and the charge effect fades away as particle size increases. The charge effect is stronger than the theoretical predictions. In addition, a sign preference is detected, i.e., water vapor condenses more readily on negatively charged particle, a trend consistent with those observed on ions. However, both effects of charge and charge polarity on S(cr) are stronger than that predicted by Volmer's theory for ion-induced nucleation. PMID:17249890

  2. Revisitation of the frictional properties of SiO2 as the LFM (lateral force microscopy) reference

    NASA Astrophysics Data System (ADS)

    Kim, Sung Hyun; Kim, Suenne

    2015-03-01

    Recently, experimental studies concerning frictional properties at the nanoscale using AFM(atomic force microscopy), specifically with LFM, are made on various kinds of materials including noble 2D graphene sheets and 1D nanotubes. The LFM technique requires calibration assuredly and therefore choosing a stable substrate as a reference is of importance. SiO2 is often used as the standard to calibrate LFM data obtained from a material of interest. However, according to our observation, the friction of cleansed SiO2 substrate can change gradually by long-time continuous LFM scanning. The friction increases up to about 1.5 times (50%) in comparison to the initial state while minute topographical difference, at the Å level, is detected. The friction depends on the number of scanning events, and the change follows an inverse exponential function, F(t) = A(1-exp[-Bt]) +F(0), where F is friction, t means time when continuous measurements are made, and A, B, F(0) are constants. Here, friction shift accompanied by z-scanner movement has been observed concurrently and corrected for the long time AFM measurements. In this regard, proper correction for the LFM shift induced by the z-scanner drift will also be introduced. This research was supported by Basic Science Research Program through NRF of Korea funded by the ministry of Education (2014R1A1A2056555).

  3. Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Sanada, Yuji

    2011-08-01

    We have studied the behavior of Au clusters on the top surface of a SiO2 film and/or at the SiO2/Si interface as a function of oxidation temperature between room temperature (RT) and 500 °C in conjunction with a Schottky-barrier-induced AC surface photovoltage (SPV) and an enhanced SiO2 growth due to Au at 500 °C. Upon rinsing an n-type Si(001) wafer in a Au-contaminated aqueous solution, precipitated Au atoms are observed as clusterlike Au granules on the top surface of SiO2 (Au surface concentration, 2.3 ×1015 atoms/cm2). In thermally oxidized Au-contaminated n-type Si(001) wafers between 100 and 500 °C, a Au cluster of a similar shape is also observed. Chemical analysis gives evidence that Au existed at the SiO2/Si interface, which produced Au/n-Si Schottky-barrier-type AC SPV between 100 and 500 °C as well as at both RT and higher temperatures, indicating that the Au/n-Si Schottky barrier remains in a similar manner. In the Au-contaminated n-Si thermally oxidized at 500 °C, the catalytic action of Au atoms enhances SiO2 growth as well as the case at high temperatures between 750 and 900 °C. The mechanism of the enhanced growth is proposed.

  4. Petrogenesis of coexisting SiO 2-undersaturated to SiO 2-oversaturated felsic igneous rocks: The alkaline complex of Itatiaia, southeastern Brazil

    NASA Astrophysics Data System (ADS)

    Brotzu, P.; Gomes, C. B.; Melluso, L.; Morbidelli, L.; Morra, V.; Ruberti, E.

    1997-07-01

    The Itatiaia alkaline complex is a Late Cretaceous intrusion (72 Myr) made up of felsic differentiates, with syenitic rocks dominant throughout and with presence of both nepheline- and quartz-rich varieties. Dykes with phonolitic or trachytic composition cross-cut the coarse-grained facies. The rocks are arranged concentrically, with the core of the complex being formed by SiO 2-oversaturated syenites (with a small outcrop of granites), and are radially displaced by faults related to regional tectonic lineaments. The minerals show gradual but significant changes in composition (salitic and augitic to aegirine-rich pyroxenes, hastingsite and actinolite to richterite and arfvedsonite amphiboles, sodic plagioclase to orthoclase feldspars and so on) and the whole-rock trends are broadly consistent with fractional crystallization processes dominated by alkali feldspar removal. Sr-isotopic data indicate more radiogenic ratios for the SiO 2-oversaturated rocks (0.7062-0.7067 against 0.7048-0.7054 for the SiO 2-undersaturated syenites), consistent with small amounts of crustal input. The favored hypothesis for the petrogenesis of the different syenitic groups is the prolonged differentiation starting from differently SiO 2-undersaturated mafic parental magmas (potassic alkali basalts to ankaratrites, present in the Late Cretaceous dyke swarms of the area), accompanied by variable crustal contamination prior to the final emplacement. The lack of carbonatite as a significant lithotype, the potassic affinity of the Itatiaia complex, and the relatively high Sr-isotopic ratios match the characteristics of the other complexes of the Rio de Janeiro-Sa˜o Paulo states coastline and confirm the ultimate derivation of these differentiated rocks from an enriched lithospheric mantle source.

  5. Preparation of SiO2/TiO2 and TiO2/TiO2 micropattern and their effects on platelet adhesion and endothelial cell regulation

    NASA Astrophysics Data System (ADS)

    Li, Jing-an; Yang, Ping; Zhang, Kun; Ren, Hui-lan; Huang, Nan

    2013-07-01

    TiO2 films were applied on blood contact biomaterials for its excellent biocompatibility. The topological structure of the biomaterial surfaces have a significant impact on cell adhesion, spreading and proliferation. Thus, it is anticipated that the combination of TiO2 film deposition and surface micro-patterning will provide a potential application for cardiovascular implants materials. In this work, TiO2/TiO2 and SiO2/TiO2 micro-groove/ridge stripes on Si (100) were prepared by photolithography, wet etching and unbalanced magnetron sputtering (UBMS). Their surface morphology, chemical composition and wettability were investigated. The crystal structure of TiO2 films was characterised by X-ray diffraction (XRD). Platelet adhesion on the SiO2/TiO2 and TiO2/TiO2 surfaces was tested, and the morphology and behaviour of endothelial cells cultured on the micropatterned surfaces were observed. It was proved that the SiO2/TiO2 pattern could reduce platelet adhesion and aggregation compared with TiO2/TiO2 pattern, endothelial cells grew along the micro-stripes and their behaviour could be effectively regulated by micropatterned surface. So, it is suggested that the micropatterned SiO2/TiO2 surface can contribute more bio-compatible function of regulating and coordinating the behaviour of endothelial cells and platelets.

  6. Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO2 Growth Due to Catalytic Action by Au in Thermally Oxidized Au-Precipitated n-Type Si(001) Surfaces

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Kumamoto, Akihito; Imamura, Senji

    2013-04-01

    The behavior of Au nanoclusters at a Au/n-Si interface was investigated. In particular, SiO2 growth in thermally oxidized Au-precipitated n-type Si(001) surfaces was enhanced by the catalytic action of Au. When the Au-precipitated Si wafer was exposed to air for 30 d at room temperature (RT), a SiO2 film layer grew over Au nanoclusters on the Si surface. This is possibly because Si atoms may diffuse in an as-deposited Au layer and are oxidized in air at RT. In the case of oxidation at higher temperatures (850 °C for 30 min), Au nanoclusters were found to exist at the Au/n-Si interface. Moreover, the origin of protuberances observed by atomic force microscopy was found to be a bulge in the SiO2 film formed over the Au nanocluster, proving that the growth of the SiO2 film layer was enhanced by the catalytic action of Au.

  7. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si /SiO2 Substrates

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Inomata, Koichiro; Mitani, Seiji

    2014-08-01

    We study polycrystalline B2-type Co2FeAl (CFA) full-Heusler-alloy-based magnetic tunnel junctions (MTJs) fabricated on a Si /SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface are achieved by using a MgO buffer layer. A tunnel magnetoresistance ratio up to 175% is obtained for a MTJ with a CFA /MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer-torque-induced magnetization switching is achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. By using a thermal activation model, the intrinsic critical current density (Jc0) is determined to be 8.2×106 A /cm2, which is lower than 2.9×107 A /cm2, the value for epitaxial CFA MTJs [Appl. Phys. Lett. 100, 182403 (2012), 10.1063/1.4710521]. We find that the Gilbert damping constant (α) evaluated by using ferromagnetic resonance measurements for the polycrystalline CFA film is approximately 0.015 and is almost independent of the CFA thickness (2-18 nm). The low Jc0 for the polycrystalline MTJ is mainly attributed to the low α of the CFA layer compared with the value in the epitaxial one (approximately 0.04).

  8. Dispersion effects in SiO2 polymorphs: An ab initio study

    NASA Astrophysics Data System (ADS)

    Hay, Henri; Ferlat, Guillaume; Casula, Michele; Seitsonen, Ari Paavo; Mauri, Francesco

    2015-10-01

    The effect of electronic dispersion over a wide variety of SiO2 polymorphs (faujasite, ferrierite, α -cristobalite, α -quartz, coesite, and stishovite) is investigated using state-of-the-art density functional theory. Different functionals and dispersion correction schemes are compared, ranging from the local density approximation to fully nonlocal exchange-correlation functionals. It is shown that both empirical dispersion corrections and fully nonlocal functionals improve the energetics and give correct volumetric data. However, the correct volume results come from error cancellation between an overestimation of the Si-O distance and an underestimation of the Si-O-Si angle. Quantum Monte Carlo is used to compute the quartz-cristobalite energy difference within an accuracy of 0.2 kCal/mol per SiO2 unit. This demonstrates the feasability of achieving subchemical accuracy on extended systems, and confirms the validity of the Slater-Jastrow ansatz for describing SiO2 polymorphs.

  9. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays

    NASA Astrophysics Data System (ADS)

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-01

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications.

  10. Enhanced adsorptive removal of toxic dyes using SiO2 nanofibers

    NASA Astrophysics Data System (ADS)

    Batool, S. S.; Imran, Z.; Hassan, Safia; Rasool, Kamran; Ahmad, Mushtaq; Rafiq, M. A.

    2016-05-01

    Electrospinning method was used to synthesize porous SiO2 nanofibers. The adsorption of Methyl Orange and Safranin O by porous SiO2 nanofibers was carried out by varying the parameters such as pH, contact time, adsorbent dose, dye concentration, and temperature. Equilibrium adsorption data followed Langmuir isotherms. Kinetic adsorption followed second-order rate kinetics model. The maximum adsorption capacity for Methyl Orange and Safranin O was found to be 730.9 mg/g and 960.4 mg/g, respectively. Acidic pH was favorable for the adsorption of Methyl Orange while basic pH was favorable for the adsorptions of Safranin O. Modeling study suggested the major mode of adsorption, while thermodynamic study showed the endothermic reactions. This effort has pronounced impact on environmental applications of SiO2 nanofibers as auspicious adsorbent nanofibers for organic material from aqueous solution.

  11. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays.

    PubMed

    Wu, Wengang; Mao, Haiyang; Han, Xiang; Xu, Jun; Wang, Weibing

    2016-07-29

    This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications. PMID:27319739

  12. Preparations and properties of a tunable void with shell thickness SiO2@SiO2 core-shell structures via activators generated by electron transfer for atom transfer radical polymerization

    NASA Astrophysics Data System (ADS)

    Ren, Yi-xian; Zhou, Guo-wei; Cao, Pei

    2016-02-01

    Core-shell structure nanoparticles are attracting considerable attention because of their applications in drug delivery, catalysis carrier, and nanomedicine. In this study, SiO2@SiO2 core-shell structure with tunable void and shell thickness was successfully prepared for the first time using SiO2-poly(buty acrylate) (PBA)-poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) (SiO2-PBA-b-PDMAEMA) as the template and tetraethoxysilane (TEOS) as the silica source. An amphiphilic copolymer PBA-b-PDMAEMA was first grafted onto the SiO2 nanosphere surface through activators regenerated by electron transfer for atom transfer radical polymerization. TEOS was hydrolyzed along with the PDMAEMA chain through hydrogen bonding, and the core-shell structure of SiO2@SiO2 was obtained through calcination to remove the copolymer. The gradient hydrophilicity of the PBA-b-PDMAEMA copolymer template facilitated the hydrolysis of TEOS molecules along the PDMAEMA to PBA segments, thereby tuning the voids between the SiO2 core and SiO2 shell, as well as the SiO2 shell thickness. The voids were about 10-15 nm and the shell thicknesses were about 4-11 nm when adding different amounts of DMAEMA monomer. SiO2@SiO2 core-shell structures with tunable void and shell thickness were employed as supports for the loading and release of doxorubicin hydrochloride (DOX) in PBS (pH 4.0). The samples demonstrated good loading capacity and controlled release rate of DOX.

  13. Characteristics of liquid phase deposited SiO2 on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng

    2014-05-01

    The characteristics of liquid-phase-deposited SiO2 film on GaAs were investigated. A mixture of H2SiF6 and H3BO3 aqueous precursors was used as the growth solution. SiO2 on GaAs with (NH4)2S treatment shows good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics are further improved with an ultrathin Si interface passivation layer (Si IPL) from the reduction of Fermi-level pinning and interface state density. Moreover, during the SiO2 deposition, HF in the growth solution can simultaneously and effectively remove native oxides on Si IPL and provide fluorine passivation on it. The Al/SiO2/Si IPL/(NH4)2S-treated GaAs MOS capacitor shows superior electrical properties. The leakage current densities can reach 7.4 × 10-9 and 6.83 × 10-8 A/cm2 at ±2 V. The interface state density can reach a 2.11 × 1011 cm-2 eV-1 with low frequency-dispersion of 8%.

  14. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.

    PubMed

    Lee, Junmyung; Efremov, Alexander; Yeom, Geun Young; Lim, Nomin; Kwon, Kwang-Ho

    2015-10-01

    An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0-50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film. PMID:26726514

  15. Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2

    NASA Astrophysics Data System (ADS)

    Markwitz, A.; Carder, D. A.; Hopf, T.; Kennedy, J.; Chan, T. K.; Mücklich, A.; Osipowicz, T.

    2012-02-01

    First results obtained from electron beam annealed sequentially implanted Pb + (29 keV) and Se + (25 keV) ions into a SiO 2 matrix are presented. Key results from Rutherford backscattering spectrometry and transmission electron microscopy investigations are: (1) Pb and Se atoms are found to bond in the SiO 2 matrix during implantation, forming into nanoclusters even prior to the annealing step, (2) Pb and Se atoms are both present in the sample after annealing at high temperature ( T = 760 °C, t = 45 min) and form into PbSe nanoclusters of varying sizes within the implanted region, and (3) the broader concentration profile of implanted Se creates a number of secondary features throughout the SiO 2 film, including voids and hollow shell Se nanoclusters. A sequential ion implantation approach has several advantages: selected areas of nanocrystals can be formed for integrated circuits, the technique is compatible with present silicon processing technology, and the nanocrystals are embedded in an inert matrix - making them highly durable. In addition, a higher concentration of nanocrystals is possible than with conventional glass melt techniques.

  16. Origin of SiO 2-rich components in ordinary chondrites

    NASA Astrophysics Data System (ADS)

    Hezel, Dominik C.; Palme, Herbert; Nasdala, Lutz; Brenker, Frank E.

    2006-03-01

    Silica-rich objects are common minor components in ordinary chondrites (OC), occurring as fragments and as chondrules. Their typical paragenesis is orthopyroxene + SiO 2 (with bulk SiO 2 >65 wt%) and occasionally with additional olivine and/or spinel. Individual silica-rich components (SRC) have previously been studied in various types of OCs, although there is only one comprehensive study of these objects by Brigham et al. [Brigham, C.A., Murrell, M.T., Yabuki, H., Ouyang, Z., El Goresy, A., 1986. Silica-bearing chondrules and clasts in ordinary chondrites. Geochim. Cosmochim. Acta 50, 1655-1666]. Several different explanations of how SRCs formed have been published. The main question is how silica-enrichment was achieved, because CI-chondritic atomic Mg/Si-ratio is 1.07 and as a consequence only olivine and pyroxene, but no free silica should be stable. There are two basic possibilities for the SiO 2-enrichment: (1) a RedOx-mechanism or magmatic fractionation on the parent body and (2) fractional condensation or recycling of chondrule mesostasis in the solar nebula. To better constrain the origin of these objects, we measured major and rare earth elements in SRCs of various types of ordinary chondrites, and in addition, we studied silica polymorphism in these objects using an in situ micro-Raman technique. Bulk chondrule compositions define mixing lines between the compositions of olivine and pyroxene. The SRCs extend these lines to an SiO 2 end member. In contrast, magmatic trends grossly deviate from these mixing lines. Concentrations of CaO, Al 2O 3, and REE in the pyroxenes of the SRCs are low (0.01 to 1× CI) and the CI-normalized REE-patterns are virtually flat, typical of bulk chondrules, but untypical of magmatic trends. We therefore conclude that SiO 2-rich objects are not of magmatic origin. They are the result of fractional condensation in the solar nebula. The silica in SRCs occurs mainly as tridymite and sometimes as cristobalite or—in very rare cases—as quartz. Some SiO 2-phases yielded a yet unknown micro-Raman spectrum, which we were unable to identify. The often chondrule-like shape of SRCs as well as the presence of high-temperature SiO 2-polymorphs lead to the following model for the origin of SRCs: formation of SiO 2-rich precursors in the solar nebula by fractional condensation, reheating to temperatures between 1140 and >1968 K, thereby forming the SRCs,—probably during the chondrule-forming process—followed by rapid cooling.

  17. Floating electrode electrowetting on hydrophobic dielectric with an SiO2 layer

    NASA Astrophysics Data System (ADS)

    Khodayari, Mehdi; Hahne, Benjamin; Crane, Nathan B.; Volinsky, Alex A.

    2013-05-01

    Floating electrode electrowetting is caused by dc voltage applied to a liquid droplet on the Cytop surface, without electrical connection to the substrate. The effect is caused by the charge separation in the floating electrode. A highly resistive thermally grown SiO2 layer underneath the Cytop enables the droplet to hold charges without leakage, which is the key contribution. Electrowetting with a SiO2 layer shows a memory effect, where the wetting angle stays the same after the auxiliary electrode is removed from the droplet in both conventional and floating electrode electrowetting. Floating electrode electrowetting provides an alternative configuration for developing advanced electrowetting-based devices.

  18. Second harmonic generation spectroscopy of p-cresol and carbazole on SiO 2 surfaces

    NASA Astrophysics Data System (ADS)

    van Wyck, N. E.; Koenig, E. W.; Byers, J. D.; Hetherington, W. M., III

    1985-11-01

    Surface second harmonic generation (SHG) has been developed as a surface specific type of electronic spectroscopy. The surface second-order susceptibility χ (2) is enhanced by the adsorption of molecules, and an electronic spectrum can be generated by scanning the dye laser through the two-photon resonances of the adsorbate. The spectra of p-cresol ionically and covalently bound to SiO 2 and of carbazole covalently bound to SiO 2 have been obtained. Weakly bound molecules such as hydrogen-bonded cresol, phenol and aniline as well as pyridine are rapidly desorbed by the competitive process of two-photon absorption.

  19. Silver Nanoparticles in SiO2 Microspheres - Preparation by Spray Drying and Use as Antimicrobial Agent.

    PubMed

    Mahltig, Boris; Haufe, Helfried; Muschter, Kerstin; Fischer, Anja; Kim, Young Hwan; Gutmann, Emanuel; Reibold, Marianne; Meyer, Dirk Carl; Textor, Torsten; Kim, Chang Woo; Kang, Young Soo

    2010-06-01

    Silver nanoparticles embedded in SiO2 particles of micrometer size are prepared using spray drying. The spray drying is performed with a SiO2 sol (solvent water:ethanol 4: 1) containing SiO2 and silver particles of nanometer size. During spray drying the SiO2 nanoparticles aggregate to SiO2 microspheres whereas the silver particles exhibit only a small tendency of aggregation and keep their nanometer size. However under special conditions also the formation of crystalline silver rods is observed. The antibacterial activity of the resulting Ag/SiO2 powders is determined against the bacteria Escherichia coli and Bacillus subtilis. Because of this antibacterial acitivity and the fact that the powder of SiO2 microspheres exhibits a good dispersibility, such materials have an immense potential to be used as antimicrobial additive in processes like master batch or fiber production. PMID:24061743

  20. Investigation of Charge Trapping in a SiO2/Si System with a Scanning Capacitance Microscope

    NASA Astrophysics Data System (ADS)

    Tomiye, Hideto; Yao, Takafumi

    1998-06-01

    The local electrical properties of a SiO2/Si structure is investigated using a scanning capacitance microscope (SCaM). The sample investigated in this study was p-type Si with a 10-nm-thick thermal oxide layer. The capacitance measurement reveals the local variation of capacitance, which reflects the electrical properties of the Si substrate, SiO2/Si interface and SiO2 layer. We have injected charge into the SiO2/Si sample. The localvariation and time evolution of the stored charge is clearly detected in a nondestructive manner by the SCaM.

  1. Synthesis of carbon encapsulated SiO2 nanoparticles from rice husk and its application in solar to steam conversion

    NASA Astrophysics Data System (ADS)

    Mufti, Nandang; Lestari, Nurhayati A.; Suciani, Erlin; Fuad, Abdulloh; Diantoro, Markus

    2016-03-01

    Steam is important in many technological applications including sterilization of medical devices, cleaning, and power generating. In general, steam can be produced by boiling water at high temperature. In new technology, solar can convert water directly into steam even at low temperature by using nanoparticles. In this research we study solar to steam conversion of carbon encapsulated SiO2 nanoparticles (SiO2@C) synthesized from rice husk. SiO2 nanoparticles were synthesized using alkali extraction and sol-gel methods. While synthesis of carbon encapsulated SiO2 nanoparticles was done by sonochemical method with glucose as source of carbon. The samples have been characterized by XRF, SEM-EDX, and XRD. The effectivity of solar steam conversion performed by measuring time dependent of temperature and pressure. XRF and XRD results shown that SiO2 nanoparticles have purity of 97.2% inn amorphous phase. Carbon encapsulated SiO2 nanoparticles (SiO2@C) have successfully synthesized indicating by NaOH base test. The morphology of SiO2@C is agglomerated with average particle size around 20 nm. The measurement of solar to steam conversion showed that increasing carbon concentration of SiO2@C rises steam production with indicated by increasing temperature and pressure of steam.

  2. [Comparing Cell Toxicity of Schizosaccharomyces pombe Exposure to Airborne PM2.5 from Beijing and Inert Particle SiO2].

    PubMed

    Liu, Meng-jiao; Huang, Yi; Wen, Hang; Qiu, Guo-yu

    2015-11-01

    To figure out the main factor of PM2.5 toxicity to cell, this study compared the cell toxicity of Schizosaccharomyces pombe (S. pombe), a model organism, exposed to inert ultrafine SiO2 particles, a model particle, and airborne PM2.5 collected from campus of Peking University Beijing China. Using ultraviolet spectrophotometry to measure cell proliferation ratio, and environmental scanning microscope to observe the particle adhesion on the cell surface, and detecting cellular ROS generation with DHE fluorescent dye chromogenic method, and using single cell gel electrophoresis to test cell DNA damage, the experiment results indicated that the ultrafine SiO2 particles (< 60 nm) could inhibit the cell proliferation of S. pombe, mainly through adsorbing onto the cell surface to change the permeability of the cell wall; but it could not induce cells to generate ROS to cause the oxidative damage. PM2.5, the average particle size of which was larger than that of SiO2 particles, could cause oxidative damages to cells mainly by inducing cells to generate ROS, and damage DNA simultaneously. It might illustrate that there was no direct relationship between the toxicity of PM2.5 and its physical properties such as the particle size. PMID:26910977

  3. Study of the physics of insulating films as related to the reliability of metal-oxide semiconductor devices

    NASA Astrophysics Data System (ADS)

    Young, D. R.; Dimaria, D. J.

    1983-08-01

    The papers enclosed with this report include: a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SiO2 films.

  4. Grad-Level Radiation Damage of SIO2 Detectors

    SciTech Connect

    Simos, N.; Atoian, G.; Ludewig, H; White, S; O'Conor, J; Mokhov, N.V.

    2009-05-04

    Radiation effects and levels to detectors. SiO{sub 2} quartz fibers of the LHC ATLAS Zero-degree Calorimeter (ZDC) anticipated to experience integrated doses of a few Grad at their closest position were exposed to 200 MeV protons and neutrons at the Brookhaven National Laboratory (BNL) Linac. Specifically, 1 mm- and 2mm-diameter quartz (GE 124) rods were exposed to direct 200 MeV protons during the first phase of exposure leading to peak integrated dose of {approx}28 Grad. Exposure to a primarily neutron flux of 1mm-diameter SiO{sub 2} fibers was also achieved with a special neutron source arrangement. In a post-irradiation analysis the quartz fiber transmittance was evaluated as a function of the absorbed dose. Dramatic degradation of the transmittance property was observed with increased radiation damage. In addition, detailed evaluation of the fibers under the microscope revealed interesting micro-structural damage features and irradiation-induced defects.

  5. Permanently densified SiO2 glasses: a structural approach

    NASA Astrophysics Data System (ADS)

    Martinet, C.; Kassir-Bodon, A.; Deschamps, T.; Cornet, A.; Le Floch, S.; Martinez, V.; Champagnon, B.

    2015-08-01

    Densified silica can be obtained by different pressure and temperature paths and for different stress conditions, hydrostatic or including shear. The density is usually the macroscopic parameter used to characterize the different compressed silica samples. The aim of our present study is to compare structural modifications for silica glass, densified from several routes. For this, densified silica glasses are prepared from cold and high temperature (up to 1020 °C) compressions. The different densified glasses obtained in our study are characterized by micro-Raman spectroscopy. Intertetrahedral angles from the main band relative to the bending mode decrease and their values are larger for densified samples from high temperature compression than those samples from cold compression. The relative amount of 3-membered rings deduced from the D2 line area increases as a function of density for cold compression. The temperature increase during the compression process induces a decrease of the 3 fold ring population. Moreover, 3 fold rings are more deformed and stressed for densified samples at room temperature at the expense of those densified at high temperature. Temperature plays a main role in the reorganization structure during the densification and leads to obtaining a more relaxed structure with lower stresses than glasses densified from cold compression. The role of hydrostatic or non-hydrostatic applied stresses on the glass structure is discussed. From the Sen and Thorpe central force model, intertetrahedral angle average value and their distribution are estimated.

  6. () preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique

    NASA Astrophysics Data System (ADS)

    Bürgi, Juan; García Molleja, Javier; Bolmaro, Raúl; Piccoli, Mattia; Bemporad, Edoardo; Craievich, Aldo; Feugeas, Jorge

    2016-04-01

    Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconductor industry. However, the AlN crystalline structure plays a crucial role in its performance. In this paper, polycrystalline AlN films have been grown onto Si(1 1 1) and Si(1 0 0) (with an oxide native coverage of SiO2) wafers by RSM (reactive sputter magnetron) technique using a small (5 L) reactor. The development of polycrystalline AlN films with a good texture along () planes, i.e., semi-polar structure, was shown. Analyses were done using X-ray diffraction in the Bragg-Brentano mode and in the GIXRD (grazing incidence X-ray diffraction) one, and the texture was determined through pole figures. The structure and composition of these films were also studied by TEM and EDS techniques. Nevertheless, the mapping of the magnetic field between the magnetron and the substrate has shown a lack of symmetry at the region near the substrate. This lack of symmetry can be attributable to the small dimensions of the chamber, and the present paper suggests that this phenomenon is the responsible for the unusual () texture developed.

  7. Effect of SiO2-acryl nanohybrid coating layers on transparent conducting oxide-poly(ethylene terephthalate) superstrate.

    PubMed

    Kang, Y T; Kang, D P; Kang, D J; Chung, I D

    2013-05-01

    SiO2-acryl nanohybrid coating layers were produced by hybridizing acrylic resin and surface-modified colloidal silica (CS) nanoparticles. First, CS nanoparticles were modified with methyltrimethoxysilane (MTMS) and vinyltrimethoxysilane (VTMS) by a sol-gel process. The surface-modified CS nanoparticles were then solvent-exchanged to be homogeneous in acrylic resin. The Hybrid materials were mixed in variation with the amount of surface-modified CS nanoparticles, coated with poly(ethylene terephthalate) (PET), then finally cured by UV light to obtain a hybrid coating layer. Field emission scanning electron microscopy (FE-SEM), particle size analysis (using a Zetasizer), and atomic force microscopy (AFM) were performed to determine the morphology of the hybrid thin-films. Thermogravimetric analysis (TGA) was used to investigate the thermal properties. Fourier-transform infrared (FTIR), ultraviolet-visible (UVNis) spectroscopies, and pencil hardness were used to obtain the details of chemical structures, optical properties, and hardness, respectively. The hybrid thin films had shown to be enhanced properties compared to their urethane acrylate prepolymer (UAP) coating film. PMID:23858925

  8. An X-ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.

    1986-01-01

    The dependence of the nitrogen distribution in thermally nitrided SiO2 films on the nitridation time and temperature has been studied by means of X-ray photoelectron spectroscopy (XPS). The photoelectron peak intensities were measured by fitting Voigt profiles to the XPS spectra and were used to calculate the film composition as a function of film depth, applying an analytical method described in detail. The times of appearance of the maxima in interfacial nitrogen concentration are shown for 800, 1000, and 1150 C, and the data are related to a kinetic model of Vasquez and Madhukar (1985), which considers the effect of interfacial strain on the nitridation kinetics. In addition, the intensity of a fluorine marker (from the HF used in the etching step) was found to correlate with the nitrogen concentration. It is postulated that the F bonds preferentially to defects. This hypothesis and the measured F intensities are consistent with the proposed strain-dependent energy of defect formation.

  9. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  10. First-principles study of structural properties of SiO2 bilayers

    NASA Astrophysics Data System (ADS)

    Malashevich, Andrei; Ismail-Beigi, Sohrab; Altman, Eric I.

    Two dimensional (2D) materials draw a tremendous amount of interest because they exhibit unique physical properties due to reduced dimensionality. Recently, SiO2 2D bilayer systems were discovered. The structure of these bilayers is formed by two mirror-image planes of corner-sharing SiO4 tetrahedra and does not have a direct relation to bulk SiO2 systems. SiO2 bilayers may be obtained in crystalline or amorphous forms. In the crystalline form, the bilayers are constructed from six-membered rings of corner-sharing SiO4 tetrahedra. The amorphous form has rings of various sizes typically in the range from four to nine Si atoms in the ring. These structures may be of practical interest as atomically thin membranes and molecular sieves. In our work, we study the effect of strain and doping on the crystalline structure of SiO2 bilayers using density functional theory. We analyze the stability of structures depending on the ring size and establish strain and doping conditions that may render the structures with large ring sizes stable. This work is supported by the National Science Foundation through Grants MRSEC NSF DMR-1119826 and NSF DMR-1506800.

  11. ENERGY-DISPERSIVE, X-RAY REFLECTIVITY DENSITY MEASUREMENTS OF POROUS SIO2 XEROGELS

    EPA Science Inventory

    X-ray reflectivity has been used to nondestructively measure the density of thin, porous, SiO2-based xerogels. Critical angle, defined by total external reflection, was measured for multiple x-ray energies to correct for sample misalignment error in me determination of the densit...

  12. Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System

    PubMed Central

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-01-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P. PMID:25997696

  13. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1988-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  14. Photoactivation of Luminescent Centers in Single SiO2 Nanoparticles.

    PubMed

    Tarpani, Luigi; Ruhlandt, Daja; Latterini, Loredana; Haehnel, Dirk; Gregor, Ingo; Enderlein, Jörg; Chizhik, Alexey I

    2016-07-13

    Photobleaching of fluorophores is one of the key problems in fluorescence microscopy. Overcoming the limitation of the maximum number of photons, which can be detected from a single emitter, would allow one to enhance the signal-to-noise ratio and thus the temporal and spatial resolution in fluorescence imaging. It would be a breakthrough for many applications of fluorescence spectroscopy, which are unachievable up to now. So far, the only approach for diminishing the effect of photobleaching has been to enhance the photostability of an emitter. Here, we present a fundamentally new solution for increasing the number of photons emitted by a fluorophore. We show that, by exposing a single SiO2 nanoparticle to UV illumination, one can create new luminescent centers within this particle. By analogy with nanodiamonds, SiO2 nanoparticles can possess luminescent defects in their regular SiO2 structure. However, due to the much weaker chemical bonds, it is possible to generate new defects in SiO2 nanostructures using UV light. This allows for the reactivation of the nanoparticle's fluorescence after its photobleaching. PMID:27243936

  15. Electron beam guiding by grooved SiO2 parallel plates without energy loss

    NASA Astrophysics Data System (ADS)

    Xue, Yingli; Yu, Deyang; Liu, Junliang; Zhang, Mingwu; Yang, Bian; Zhang, Yuezhao; Cai, Xiaohong

    2015-12-01

    Using a pair of grooved SiO2 parallel plates, stably guided electron beams were obtained without energy loss at 800-2000 eV. This shows that the transmitted electrons are guided by a self-organized repulsive electric field, paving the way for a self-adaptive manipulation of electron beams.

  16. SiO2 nanofluid planar jet impingement cooling on a convex heated plate

    NASA Astrophysics Data System (ADS)

    Asghari Lafmajani, Neda; Ebrahimi Bidhendi, Mahsa; Ashjaee, Mehdi

    2016-02-01

    The main objective of this paper is to investigate the heat transfer coefficient of a planar jet of SiO2 nanofluid that impinges vertically on the middle of a convex heated plate for cooling purposes. The planar jet issues from a rectangular slot nozzle. The convex aluminum plate has a thickness, width and length of 0.2, 40 and 130 mm, respectively, and is bent with a radius of 200 mm. A constant heat-flux condition is employed. 7 nm SiO2 particles are added to water to prepare the nanofluid with 0.1, 1 and 2 % (ml SiO2/ml H2O) concentrations. The tests are also performed at different Reynolds numbers from 1803 to 2782. Results indicate that adding the SiO2 nanoparticles can effectively increase both local and average heat transfer coefficients up to 39.37 and 32.78 %, respectively. These positive effects often are more pronounced with increasing Reynolds numbers. This enhancement increases with ascending the concentration of nanofluid, especially from 0.1 to 1 %.

  17. Evaluation of physicochemical properties of SiO2-coated stainless steel after sterilization.

    PubMed

    Walke, Witold; Paszenda, Zbigniew; Pustelny, Tadeusz; Opilski, Zbigniew; Drewniak, Sabina; Kościelniak-Ziemniak, Magdalena; Basiaga, Marcin

    2016-06-01

    The study of most of the literature devoted to the use of coronary stents indicates that their efficiency is determined by the physicochemical properties of the implant surface. Therefore, the authors of this study suggested conditions for the formation of SiO2 layers obtained with the use of sol-gel methodology showing physicochemical properties adequate to the specific conditions of the cardio-vascular system. Previous experience of authors helped them much to optimize the coating of 316LVM steel surface with SiO2. The values of parameters that determine the usefulness of the coating in medical applications have been determined. In order to identify the phenomena taking place at the boundary of phases and to evaluate the usefulness of the proposed surface modification, taking into consideration the medical sterilization (steam or ethylene oxide (EO)), the potentiodynamic, impedance, adhesion, surface morphology and biological assessment characterizations were performed. Regardless of the usage of the sterilizing agent (steam, EO) the study showed the reduction of critical force causing layer's delamination. The research results of corrosion resistance study also confirmed a slight decrease of SiO2 barrier properties of the samples after sterilization in contact with the artificial plasma. SiO2 layers after the sterilization process did not show significant features of cytotoxicity and had no negative influence on blood cell counts, which confirmed the results of quantitative and qualitative studies. PMID:27040207

  18. Enhanced photovoltaic performance of perovskite solar cells with mesoporous SiO2 scaffolds

    NASA Astrophysics Data System (ADS)

    Yu, Xiao; Chen, Si; Yan, Kai; Cai, Xin; Hu, Hsienwei; Peng, Ming; Chen, Buxin; Dong, Bin; Gao, Xue; Zou, Dechun

    2016-09-01

    We applied SiO2 nanoparticles as an alternative to mesoporous TiO2 or Al2O3 scaffolds and achieved power conversion efficiency (PCE) of up to 16.2%. Careful characterization of the effects of different scaffolds on device performance reveals that SiO2-based perovskite solar cells show much higher PCE due to the higher Voc and fill factor (FF), and the hysteresis for SiO2-based perovskite solar cell is less severe than for Al2O3-based perovskite solar cell. Time-correlated-single-photoncounting (TCSPC) luminescence decay and external quantum efficiency (EQE) tests provide further insights into the charge transfer behavior and light-harvesting characteristics of the proposed devices. Potential mechanisms of the observed phenomena are also suggested. Taken together, our results demonstrate that SiO2 nanoparticles may potentially replace mesoporous TiO2 or Al2O3 scaffolds in perovskite solar cells to achieve remarkably high PCE.

  19. Microscopical and mechanical evaluation of the durability of SiO2 aggregates

    NASA Astrophysics Data System (ADS)

    El Bahraoui, Hassan; Khouchaf, Lahcen; Ben Fraj, Amor

    2016-05-01

    The durability of SiO2 compounds is closely related to its structural properties. In this work three natural siliceous aggregates (called G1, G2 and G3) are studied. Improvement of the durability of the starting material leads to a significant energy savings by extending the lifetime of structures. The chemical composition of the three natural aggregates shows that G1 and G2 have almost the same chemical composition (SiO2) and G3 is different and contains SiO2 quartz type and calcite as major components (SiO2, calcite and dolomite). X-ray diffraction (XRD) shows that natural aggregates G1 is more crystallized than G2 and G3. After alkali silica reaction (ASR) process, the reactivity of G3 aggregate seems to be higher than the G1 and G2 aggregates. The mechanical results show the slight difference between mortar containing G1 (M_G1) and that containing G2 (M_G2). Their compressive strength is 10% less than that of reference (M_SS). As it is more reactive, G3 seems improving the compressive strength of M_G3, compared to M_G1 and M_G2. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  20. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1989-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  1. XPS Study of Oxide/GaAs and SiO2/Si Interfaces

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

    1982-01-01

    Concepts developed in study of SiO2/Si interface applied to analysis of native oxide/GaAs interface. High-resolution X-ray photoelectron spectroscopy (XPS) has been combined with precise chemical-profiling technique and resolution-enhancement methods to study stoichiometry of transitional layer. Results are presented in report now available.

  2. Location and Electronic Nature of Phosphorus in the Si Nanocrystal - SiO2 System

    NASA Astrophysics Data System (ADS)

    König, Dirk; Gutsch, Sebastian; Gnaser, Hubert; Wahl, Michael; Kopnarski, Michael; Göttlicher, Jörg; Steininger, Ralph; Zacharias, Margit; Hiller, Daniel

    2015-05-01

    Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO2-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO2 system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO2 matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO2 system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO2 and SiNC/SiO2 superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO2. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P.

  3. Exotic SiO2H2 Isomers: Theory and Experiment Working in Harmony.

    PubMed

    McCarthy, Michael C; Gauss, Jürgen

    2016-05-19

    Replacing carbon with silicon can result in dramatic and unanticipated changes in isomeric stability, as the well-studied CO2H2 and the essentially unknown SiO2H2 systems illustrate. Guided by coupled-cluster calculations, three SiO2H2 isomers have been detected and spectroscopically characterized in a molecular beam discharge source using rotational spectroscopy. The cis,trans conformer of dihydroxysilylene HOSiOH, the ground-state isomer, and the high-energy, metastable dioxasilirane c-H2SiO2 are abundantly produced in a dilute SiH4/O2 electrical discharge, enabling precise structural determinations of both by a combination of isotopic measurements and calculated vibrational corrections. The isotopic studies also provide insight into their formation route, suggesting that c-H2SiO2 is formed promptly in the expansion but that cis,trans-HOSiOH is likely formed by secondary reactions following formation of the most stable dissociation pair, SiO + H2O. Although less abundant, the rotational spectrum of trans-silanoic acid, the silicon analogue of formic acid, HSi(O)OH, has also been observed. PMID:27139016

  4. Nanoimprint lithography using TiO2-SiO2 ultraviolet curable materials

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2015-05-01

    Ultraviolet nanoimprint lithography has great potential for commercial device applications that are closest to production such as optical gratings, planar waveguides, photonic crystals, semiconductor, displays, solar cell panel, sensors, highbrightness LEDs, OLEDs, and optical data storage. I report and demonstrate the newly TiO2-SiO2 ultraviolet curable materials with 20-25 wt% ratio of high titanium for CF4/O2 etch selectivity using nanoimprint lithography process. The multiple structured three-dimensional micro- and nanolines patterns were observed to be successfully patterned over the large areas. The effect of titanium concentration on CF4/O2 etch selectivity with pattern transferring carbon layer imprinting time was investigated. CF4/O2 etching rate of the TiO2-SiO2 ultraviolet curable material was approximately 3.8 times lower than that of the referenced SiO2 sol-gel ultraviolet curable material. The TiO2-SiO2 ultraviolet curable material with high titanium concentration has been proved to be versatile in advanced nanofabrication.

  5. Different behavior of lithium interaction with SiO2 and Al2 O3

    NASA Astrophysics Data System (ADS)

    Zhao, Yufeng; Ban, Chunmei; Kappes, Branden B.; Xu, Qiang; Engtrakul, Chaiwat; Ciobanu, Cristian V.; Dillon, Anne C.

    2014-03-01

    Lithiation of SiO2 and lithium intercalation in Al2O3 is studied both theoretically and experimentally. Lithium interacts with these two types of oxides in distinctly different behaviors. Reversible insertion/extraction of lithium in SiO2 up to a Li density of 2/3 Li per Si are demonstrated experimentally. Density-functional-theory (DFT) calculation shows that neither free interstitial Li atoms (no reduction) nor formation of a local Li2O cluster plus a Si-Si bond (full reduction) is energetically favorable. However, two Li atoms can effectively break a Si-O bond and be stabilized between the Si and O atoms. Such a defect, representing a state of partial reduction of SiO2, is energetically favorable. DFT simulation shows that intercalation of SiO2 at high Li density through partial reduction results in crystalline compounds LixSiO2 (x <2/3) with tunable band-gaps in the range of 2-3.4 eV. In sharp contrast, Al2O3 is very stable against lithiation through any form of reduction. However, good conductivity of Li ions is shown in porous Al2O3. Work funded by the U.S. DOE under Subcontract No. DE-AC36-08GO28308 through the Office of EERE, the Office of the Vehicle Technologies Program, and by NSF through Award Nos. OCI-1048586 and CMMI-0846858.

  6. Searching for high-k RE2O3 nanoparticles embedded in SiO2 glass matrix

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Lin, Y. H.; Kao, T. H.; Chou, C. C.; Yang, H. D.

    2012-03-01

    Significant experimental effort has been explored to search and characterize high-k materials with magnetodielectric effect (MDE) of series of rare earth (RE) oxide (RE2O3) nanoparticles (NPs) embedded in SiO2 glass matrix by a sol-gel route. Properly annealed sol-gel glass (in which RE = Sm, Gd, and Er) shows colossal response of dielectric constant along with diffuse phase transition and MDE around room temperature. The radial distribution functions, reconstructed from extended x-ray absorption fine structure, show the shortening of RE3 + -O depending on the RE2O3 NP size, which is consistent with oxygen vacancy induced dielectric anomaly. The magnetoresistive MDE is very much conditioned by magnetic property of RE2O3 NP grain, the degree of deformation of the lattice and constituent host.

  7. Construction of a two layer quarter-wave stack consisting of TiO2 and SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Papavasiliou, Kriton; Heflin, J. R.; Ritter, Alfred

    2010-03-01

    There are several methods of depositing quarter-wave stacks including vacuum deposition and spin coating that are expensive and/or unsuitable for large and non-planar surfaces. These difficulties can be ameliorated by using ISAM (Ionic Self-Assembled Monolayers) for depositing the films. A quarter-wave stack has been constructed with a low refractive index layer of SiO2 nanoparticles and a high refractive index layer of TiO2 nanoparticles. The process conditions for the quarter-wave stack have been optimized by a factorial design experiment. The optical properties of the stack will be reported.

  8. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Kyung, Se Jin; Yeom, Geun Young

    2008-10-01

    Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called "pin-to-plate DBD." The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200-800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1-10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C-F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

  9. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles.

    PubMed

    Zhang, Dongen; Wu, Jinbo; Zhou, Bingpu; Hong, Yaying; Li, Shunbo; Wen, Weijia

    2013-07-01

    Photocatalysis provides a 'green' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. PMID:23727825

  10. Effect of SiO2 Spacer-Layer Thickness on Localized Surface Plasmon-Enhanced ZnO Nanorod Array LEDs.

    PubMed

    Liu, Weizhen; Xu, Haiyang; Yan, Siyi; Zhang, Cen; Wang, Lingling; Wang, Chunliang; Yang, Liu; Wang, Xinhua; Zhang, Lixia; Wang, Jiannong; Liu, Yichun

    2016-01-27

    Localized surface plasmon (LSP)-enhanced ultraviolet LEDs have been constructed via spin-coating Ag nanoparticles onto ZnO/SiO2 core/shell nanorod array/p-GaN heterostructures. Different from the previous reports where the dielectric spacer-layer thickness was determined only through photoluminescence (PL) characterization, the SiO2 shell thickness in this work is also optimized by actual electroluminescence (EL) measurements to maximize the enhancement. It is interesting to find that the enhancement ratios derived from PL and EL measurements demonstrate different thickness dependences on SiO2 shell: an optimal 3.5-fold PL enhancement was obtained at the SiO2 thickness of 16 nm, while an "abnormal" 7-fold EL enhancement was achieved at the thickness of 12 nm. Time-resolved spectroscopy studies, as well as theoretical estimations and numerical simulations, reveal that the higher-ratio EL enhancement stems from joint contributions, both internal-quantum-efficiency improvement induced by exciton-LSP coupling and light-extraction-efficiency improvement aroused by photon-LSP coupling. PMID:26741886

  11. Economic Hydrophobicity Triggering of CO2 Photoreduction for Selective CH4 Generation on Noble-Metal-Free TiO2-SiO2.

    PubMed

    Dong, Chunyang; Xing, Mingyang; Zhang, Jinlong

    2016-08-01

    On the basis of the fact that the competitive adsorption between CO2 and H2O on the catalyst plays an important role in the CO2 photoreduction process, here we develop an economic NH4F-induced hydrophobic modification strategy to enhance the CO2 competitive adsorption on the mesoporous TiO2-SiO2 composite surface via a simple solvothermal method. After the hydrophobic modification, the CO2 photoreduction for the selective generation of CH4 over the noble-metal-free TiO2-SiO2 composite can be greatly enhanced (2.42 vs 0.10 μmol/g in 4h). The enhanced CO2 photoreduction efficiency is assigned to the rational hydrophobic modification on TiO2-SiO2 surface by replacing Si-OH to hydrophobic Si-F bonds, which will improve the CO2 competitive adsorption and trigger the eight-electron CO2 photoreduction on the reaction kinetics. PMID:27415144

  12. Dual surface plasmon resonances in Zn nanoparticles in SiO(2): an experimental study based on optical absorption and thermal stability.

    PubMed

    Amekura, H; Umeda, N; Kono, K; Takeda, Y; Kishimoto, N; Buchal, Ch; Mantl, S

    2007-10-01

    Metallic zinc nanoparticles (NPs) of 5-15 nm in diameter, formed in silica glass (SiO(2)) by Zn ion implantation of 60 keV, showed a strong ultraviolet absorption peak at around 4.8 eV, which has been assigned as the surface plasmon resonance (SPR) of Zn NPs, and another small peak at 1.2 eV, which has never been reported before. To identify the origin of the 1.2 eV peak, the correlations of thermal stability between the two peaks and Zn NPs were evaluated under annealing both in a vacuum (pure thermal stability) and in oxygen gas (thermal oxidation stability). The well-correlated stability between the 1.2 eV peak, the 4.8 eV peak and Zn NPs indicates that the 1.2 eV peak is not ascribed to radiation-induced defects but to the Zn NPs. The 1.2 eV peak can be ascribed to an SPR of Zn NPs in SiO(2), because the peak satisfies the criterion of the SPR of metallic NPs. Since the 4.8 eV peak is also expected to satisfy the criterion, Zn NPs in SiO(2) have two SPRs at 1.2 and 4.8 eV. PMID:21730432

  13. Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results

    NASA Astrophysics Data System (ADS)

    Inai, Kensuke; Ohya, Kaoru; Kuwada, Hideaki; Kawasaki, Ryosuke; Saito, Misako; Fujihara, Kaoru; Hayashi, Teruyuki; Jau, Jack; Kanai, Kenichi

    2008-11-01

    Recently, a unique capability in highly sensitive detection of residue defects in photoresist patterns on a metal hard mask has been verified experimentally [T. Hayashi et al., Proc. SPIE, 6922 (2008) 6922-129]. In order to reveal the mechanism for the new defect inspection technique, the charging up induced by 300 eV - 2000 eV electron bombardment of thin insulating layers (SiO2, ~tens of nm) on Si is studied by using a self-consistent Monte-Carlo simulation of the transport of a primary electron and secondary electrons (SE) and the generation of an electric field due to the charges in the layer. The calculation is compared with the contrast changes in the SEM images of thermally oxidized layers (20~100 nm) on a Si wafer. Low-energy EB (or thick SiO2 layer) causes the positive charging of the layer, whereas the high-energy EB, which penetrates under thin SiO2 layer, relaxes the charging of the layer due to electron-hole recombination in Si. The thickness dependence of the SE yield for low- and high-energies is investigated, which explains the observed changes in the SEM images of the insulating layers on Si.

  14. Improvement of light scattering capacity in dye-sensitized solar cells by doping with SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Lee, Min-Jun; Park, Jun-Yong; Kim, Chan-Soo; Okuyama, Kikuo; Lee, Sung-Eun; Kim, Tae-Oh

    2016-09-01

    N-doped TiO2 was further doped with SiO2 to prepare SiO2/N-doped TiO2 photoelectrodes with high activity in the visible region. A sol-gel process was employed to produce nanoparticles of SiO2/N-doped TiO2. The addition of SiO2 to the metal oxide enhanced charge transfer and reduced charge recombination. With the addition of sufficient amounts of SiO2 and N, the photoelectrodes exhibited a high surface area and strong absorption of light because of their altered absorptivity in the visible wavelength region. These characteristics enabled the production of photoelectrodes with increased charge transfer and reduced charge recombination, resulting in dye-sensitized solar cells (DSSCs) with enhanced Jsc values. The SiO2/N-doped TiO2 photoelectrodes were characterized using a range of analysis techniques. After the J-V curve measurements, the DSSCs fabricated with the 0.1 mM SiO2/N-doped TiO2 photoelectrodes exhibited the highest energy conversion efficiency of 8.68%, which was approximately 3% higher than that of the N-doped TiO2 control groups. This high energy efficiency with the addition of SiO2 might be due to the enhanced surface area of the photoelectrodes, allowing more dye absorption, and a decrease in electron recombination.

  15. Characterization of ion-assisted induced absorption in A-Si thin-films used for multivariate optical computing

    NASA Astrophysics Data System (ADS)

    Nayak, Aditya B.; Price, James M.; Dai, Bin; Perkins, David; Chen, Ding Ding; Jones, Christopher M.

    2015-06-01

    Multivariate optical computing (MOC), an optical sensing technique for analog calculation, allows direct and robust measurement of chemical and physical properties of complex fluid samples in high-pressure/high-temperature (HP/HT) downhole environments. The core of this MOC technology is the integrated computational element (ICE), an optical element with a wavelength-dependent transmission spectrum designed to allow the detector to respond sensitively and specifically to the analytes of interest. A key differentiator of this technology is it uses all of the information present in the broadband optical spectrum to determine the proportion of the analyte present in a complex fluid mixture. The detection methodology is photometric in nature; therefore, this technology does not require a spectrometer to measure and record a spectrum or a computer to perform calculations on the recorded optical spectrum. The integrated computational element is a thin-film optical element with a specific optical response function designed for each analyte. The optical response function is achieved by fabricating alternating layers of high-index (a-Si) and low-index (SiO2) thin films onto a transparent substrate (BK7 glass) using traditional thin-film manufacturing processes (e.g., ion-assisted e-beam vacuum deposition). A proprietary software and process are used to control the thickness and material properties, including the optical constants of the materials during deposition to achieve the desired optical response function. The ion-assisted deposition is useful for controlling the densification of the film, stoichiometry, and material optical constants as well as to achieve high deposition growth rates and moisture-stable films. However, the ion-source can induce undesirable absorption in the film; and subsequently, modify the optical constants of the material during the ramp-up and stabilization period of the e-gun and ion-source, respectively. This paper characterizes the unwanted

  16. Loss of magnetization induced by doping in CeO2 films

    NASA Astrophysics Data System (ADS)

    Fernandes, V.; Schio, P.; de Oliveira, A. J. A.; Schreiner, W. H.; Varalda, J.; Mosca, D. H.

    2011-12-01

    This work reports the effect of Mn, Fe, Co, and Cu low doping (˜3 at. %) on the ferromagnetic behavior of oxygen-defective CeO2-δ films electrodeposited on SiO2/Si(001). Our results indicate that the incorporation of a small number of 3d dopants with unoccupied outermost atomic orbitals, presumably magnetically active, strongly perturb the ferromagnetic ground-state associated with the network of electron clouds surrounding oxygen vacancies. As a consequence, a strong loss of magnetization occurs and saturation magnetization becomes uncorrelated with number of oxygen vacancies.

  17. Functional photocatalytically active and scratch resistant antireflective coating based on TiO2 and SiO2

    NASA Astrophysics Data System (ADS)

    Mazur, M.; Wojcieszak, D.; Kaczmarek, D.; Domaradzki, J.; Song, S.; Gibson, D.; Placido, F.; Mazur, P.; Kalisz, M.; Poniedzialek, A.

    2016-09-01

    Antireflection (AR) multilayer coating, based on combination of five TiO2 and SiO2 thin films, was deposited by microwave assisted reactive magnetron sputtering process on microscope glass substrates. In this work X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and wettability measurements were used to characterize the structural and surface properties of the deposited coating. These studies revealed that prepared coating was amorphous with low surface roughness. Photocatalytic properties were determined based on phenol decomposition reaction. Measurements of optical properties showed that transmittance in the visible wavelength range was increased after the deposition of AR coating as-compared to bare glass substrate. The mechanical properties were determined on the basis of nano-indentation and scratch resistance tests. Performed research has shown that deposition of an additional thin 10 nm thick TiO2 thin film top layer, the prepared AR coating was photocatalytically active, hydrophobic, scratch resistant and had increased hardness as-compared to bare glass substrate. These results indicate that prepared AR multilayer could be used also as a self-cleaning and protective coating.

  18. Leakage radiation spectroscopy of organic/dielectric/metal systems: influence of SiO2 on exciton-surface plasmon polariton interaction

    NASA Astrophysics Data System (ADS)

    Fiutowski, J.; Kawalec, T.; Kostiučenko, O.; Bordo, V.; Rubahn, H.-G.; Jozefowski, L.

    2014-05-01

    Leakage radiation spectroscopy of organic para-Hexaphenylene (p-6P) molecules has been performed in the spectral range 420-675 nm which overlaps with the p-6P photoluminescence band. The p-6P was deposited on 40 nm silver (Ag) films on BK7 glass, covered with SiO2 layers. The SiO2 layer thickness was varied in the range 5-30 nm. Domains of mutually parallelly oriented organic nanofibers were initially grown under high-vacuum conditions by molecular beam epitaxy onto a cleaved muscovite mica substrate and afterwards transferred onto the sample by a soft transfer technique. The sample placed on a flat side of a hemisphere fused silica prism with an index matching liquid was illuminated under normal incidence by a He-Cd 325 nm laser. Two orthogonal linear polarizations were used both parallel and perpendicular to the detection plane. Spectrally resolved leakage radiation was observed on the opposite side of the Ag film (i.e. at the hemisphere prism) as a function of the scattering angle. Each spectrum contains a distinct peak at a wavelength dependent angle above the critical angle. This way the dispersion curve was measured, originating from a hybrid mode, i.e. the interaction between the p-6P excitons and surface plasmon polaritons (SPPs) of the metal/dielectric boundary. The presence of the SiO2 layer considerably changes the dispersion curve in comparison to the one of the Ag/p-6P/air system. However, the Ag/SiO2/p-6P/air stack forms a stable structure allowing construction of organic plasmonic devices such as nano-lasers.

  19. Synthesis and photoluminescence properties of core-shell structured YVO4:Eu3+@SiO2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Liu, Lina; Xiao, Hongyu; An, Xiuyun; Zhang, Yongsheng; Qin, Ruifei; Liu, Lishuang; Zhang, Dongmei; Sun, Ruirui; Chen, Linfeng

    2015-01-01

    Well-dispersed YVO4:Eu3+ nanoparticles (NPs) of about 8 nm were synthesized by a precipitation reaction and they were coated with SiO2 by a reverse microemulsion method. The thickness of SiO2 shells was altered by changing the molar ratio of tetraethoxysilane (TEOS)/YVO4:Eu3+. The influence of SiO2 coating on the photoluminescence properties of the YVO4:Eu3+ NPs was studied in detail. With the increase of the SiO2 shell thickness, the intensity ratio of 5D0-7F2/5D0-7F1 becomes lower. It was interesting to observe that the quantum yield of naked YVO4:Eu3+ is higher than that of YVO4:Eu3+@SiO2 nanocomposites, and the result is opposite to a previous reference.

  20. pH-Induced Release of Polyanions from Multilayer Films

    SciTech Connect

    Kharlampieva, Dr. Eugenia; Ankner, John Francis; Rubinstein, Michael; Sukhishvili, Prof. Svetlana A.

    2008-01-01

    We discovered pH-induced selective desorption and re-adsorption of weak polyacid chains from polyacid/polybase layer-by-layer films. In situ ATR-FTIR confirms the selectivity of polyacid release and shows that film response is caused by pH-induced charge imbalance. Experimentally, the characteristic time of chain release, τ, scales with molar mass, Mw, as Mw1.1 0.1. A new theoretical model of "sticky gel electrophoresis" of entangled polyacids agrees with experiments and predicts τ ~ Mw H, where H is film thickness. Neutron reflectivity shows that polyacid release results in disordering of the film structure.

  1. Post-stishovite transition in hydrous aluminous SiO2

    NASA Astrophysics Data System (ADS)

    Umemoto, Koichiro; Kawamura, Katsuyuki; Hirose, Kei; Wentzcovitch, Renata M.

    2016-06-01

    Lakshtanov et al. (2007) showed that incorporation of aluminum and some water into SiO2 significantly reduces the post-stishovite transition pressure in SiO2. This discovery suggested that the ferroelastic post-stishovite transition in subducted MORB crust could be the source of reflectors/scatterers with low shear velocities observed in the mid to upper lower mantle. A few years later, a similar effect was observed in anhydrous Al-bearing silica. In this paper, we show by first principles static calculations and by molecular dynamics using inter-atomic potentials that hydrogen bonds and hydrogen mobility play a crucial role in lowering the post-stishovite transition pressure. A cooperative redistribution of hydrogen atoms is the main mechanism responsible for the transition pressure reduction in hydrous aluminous stishovite. The effect is enhanced by increasing hydrogen concentration. This perspective suggests a potential relationship between the depth of seismic scatterers and the water content in stishovite.

  2. The effect of packing density on luminescence of amorphous SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Shaymardanov, Z. Sh.; Kurbanov, S. S.; Rakhimov, R. Yu.

    2016-06-01

    Photoluminescence of amorphous SiO2 nanoparticles compressed in the form of tablets is studied under exposure to UV radiation. The observed luminescence spectrum is a broad band extending from the excitation wavelength to 700 nm and with a maximum at ~470 nm. The spectrum can be decomposed into two Gaussian components with maxima at ~460 and ~530 nm. As the pressure applied for sample preparation increases, the integrated intensities of these bands change in opposite directions—the intensity of the short-wavelength band increases, while that of the long-wavelength band decreases. It is concluded that these bands are due to different luminescence centers of silicon dioxide located on the surface and in the bulk of SiO2 nanoparticles.

  3. Low loss Si(3)N(4)-SiO(2) optical waveguides on Si.

    PubMed

    Henry, C H; Kazarinov, R F; Lee, H J; Orlowsky, K J; Katz, L E

    1987-07-01

    We have developed an optical integrated circuit waveguide technology based on conventional Si processing. We demonstrate waveguide losses of <0.3 dB/cm in the 1.3-1.6-microm wavelength range. We use a high refractive-index core of Si(3)N(4) surrounded by SiO(2) cladding layers, which provides a highly confined optical mode adequate for butt coupling to channel substrate buried heterostructure lasers. We report the first IR transmission experiments in these waveguides and find two absorption peaks associated with H in SiO(2) and Si(3)N(4) layers at 1.40 and 1.52 microm, respectively. The peak absorptions are 2.2 and 1.2 dB/cm, respectively, and these peaks can be largely removed by annealing at 1100-1200 degrees C. PMID:20489931

  4. Experimental observations of the chemistry of the SiO2/Si interface

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Maserjian, J.

    1977-01-01

    Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

  5. Atomic oxygen undercutting of defects on SiO2 protected polyimide solar array blankets

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Auer, Bruce M.; Difilippo, Frank

    1990-01-01

    Low Earth Orbital (LEO) atomic oxygen can oxidize SiO2-protected polyimide kapton solar array blanket material which is not totally protected as a result of pinholes or scratches in the SiO2 coatings. The probability of atomic oxygen reaction upon initial impact is low, thus inviting oxidation by secondary impacts. The secondary impacts can produce atomic oxygen undercutting which may lead to coating mechanical failure and ever increasing mass loss rates of kapton. Comparison of undercutting effects in isotropic plasma asher and directed beam tests are reported. These experimental results are compared with computational undercutting profiles based on Monte Carlo methods and their implication on LEO performance of protected polymers.

  6. The growth and in situ characterization of chemical vapor deposited SiO2

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1987-01-01

    This paper reports the results of studies of the kinetics of remote (indirect) plasma enhanced low pressure CVD growth of SiO2 on Si and InP and of the in situ characterization of the electrical surface properties of InP during CVD processing. In the latter case photoluminescence was employed as a convenient and sensitive noninvasive method for characterizing surface trap densities. It was determined that, provided certain precautions are taken, the growth of SiO2 occurs in a reproducible and systematic fashion that can be expressed in an analytic form useful for growth rate prediction. Moreover, the in situ photoluminescence studies have yielded information on sample degradation resulting from heating and chemical exposure during the CVD growth.

  7. Mobility and saturation velocity in graphene on SiO2

    NASA Astrophysics Data System (ADS)

    Dorgan, Vincent E.; Bae, Myung-Ho; Pop, Eric

    2010-08-01

    We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (˜1 V/μm). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2×1012 cm-2. Saturation velocity is >3×107 cm/s at low carrier density, and remains greater than in Si up to 1.2×1013 cm-2. Transport appears primarily limited by the SiO2 substrate but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.

  8. Mechanical properties of sol–gel derived SiO2 nanotubes

    PubMed Central

    Antsov, Mikk; Vlassov, Sergei; Dorogin, Leonid M; Vahtrus, Mikk; Zabels, Roberts; Lange, Sven; Lõhmus, Rünno

    2014-01-01

    Summary The mechanical properties of thick-walled SiO2 nanotubes (NTs) prepared by a sol–gel method while using Ag nanowires (NWs) as templates were measured by using different methods. In situ scanning electron microscopy (SEM) cantilever beam bending tests were carried out by using a nanomanipulator equipped with a force sensor in order to investigate plasticity and flexural response of NTs. Nanoindentation and three point bending tests of NTs were performed by atomic force microscopy (AFM) under ambient conditions. Half-suspended and three-point bending tests were processed in the framework of linear elasticity theory. Finite element method simulations were used to extract Young’s modulus values from the nanoindentation data. Finally, the Young’s moduli of SiO2 NTs measured by different methods were compared and discussed. PMID:25383292

  9. Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

    NASA Astrophysics Data System (ADS)

    Wan, Bensong; Yang, Bingchao; Wang, Yue; Zhang, Junying; Zeng, Zhongming; Liu, Zhongyuan; Wang, Wenhong

    2015-10-01

    Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.

  10. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    NASA Astrophysics Data System (ADS)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  11. Optical activity of chitosan films with induced anisotropy

    NASA Astrophysics Data System (ADS)

    Gegel, Natalia O.; Shipovskaya, Anna B.

    2016-04-01

    The optical anisotropy and optical activity of salt and basic chitosan films, both initial and modified in formic acid vapor were studied. The modification of such films was found to be accompanied by induced time-stable optical anisotropy, by varying the values of specific optical rotation [α] and an inversion of the sign of [α]. The angular dependences (indicatrices) of the specific optical rotation of films on the orientation angle of the sample relative to the direction of the polarization vector of the incident light beam in a plane perpendicular to the beam were obtained. The indicatrices of the initial chitosan films have an almost symmetrical character while those of the films modified in formic acid vapor are irregular. It is concluded of the formation of a vitrified cholesteric mesophase in the chitosan films with induced optical anisotropy.

  12. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE PAGESBeta

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  13. Effect of nonuniform microstructure on magnetic switching behavior in CoCrPt -SiO2 perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Jung, H. S.; Kuo, M.; Malhotra, S. S.; Bertero, G.

    2008-04-01

    The effect of nonuniform microstructure on magnetic switching behavior for CoCrPt -SiO2 single layer media with oxygen contents (OCs) from 4% to 10% and recording layer thickness (tmag) from 2to27nm is investigated. Plan-view transmission electron microscopy images clearly show nonuniform microstructure of CoCrPt -SiO2 with OC =10% along the film thickness direction: poor grain isolation at a thin layer, excellent grain isolation at a medium layer, and formation of subgrains at a thick layer. The highest coercivity (Hc) is not observed on the medium with the best grain isolation. An initial CoPt layer with less grain isolation forms on top of Ru interlayer with increasing OC in films. It exhibits domain wall switching, resulting in significant incoherent switching. This is consistent with large magnetic activation volume at tmag⩽6nm. Other plausible incoherent switching mechanism for thicker layer media showing low Hc is likely due to formation of subgrains with less grain isolation.

  14. Silicon ions below 100 km - A case for SiO2/+/. [during meteoroid shower

    NASA Technical Reports Server (NTRS)

    Goldberg, R. A.

    1975-01-01

    An investigation regarding the occurrence of Si ions is conducted, taking into account an unusual metal ion structure observed during a meteor shower event. Loss processes involving silicon oxides are considered in connection with a study of the reasons for the unique Si(+) distribution found. It is suggested that below 100 km Si(+) is rapidly depleted by two- and three-body reactions with molecular oxygen, forming SiO2(+) which then recombines.

  15. Optical and other material properties of SiO2 from ab initio studies

    NASA Astrophysics Data System (ADS)

    Warmbier, Robert; Mohammed, Faris; Quandt, Alexander

    2014-07-01

    The optical properties of photonic devices largely depend on the dielectric properties of the underlying materials. We apply modern ab initio methods to study crystalline SiO2 phases, which serve as toy models for amorphous glass. We discuss the dielectric response from the infrared to the VIS/UV, which is crucial for glass based photonic applications. Low density silica, like cristobalite, may provide a good basis for high transmission optical devices.

  16. SEGR in SiO$${}_2$$ –Si$_3$ N$_4$ Stacks

    DOE PAGESBeta

    Javanainen, Arto; Ferlet-Cavrois, Veronique; Bosser, Alexandre; Jaatinen, Jukka; Kettunen, Heikki; Muschitiello, Michele; Pintacuda, Francesco; Rossi, Mikko; Schwank, James R.; Shaneyfelt, Marty R.; et al

    2014-04-17

    This work presents experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO2–Si3N4 structures. Also a semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is proposed. Then statistical interrelationship between SEGR cross-section data and simulated energy deposition probabilities in thin dielectric layers is discussed.

  17. Precautions toward XTEM of Si3N4/SiO2

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.

    1991-01-01

    Severe difficulties are encountered in the preparation of oxidized Si3N4 specimens for XTEM transmission electromicroscopic inspection, in virtue of the extreme difference between Si3N4 and SiO2 mechanical properties. Attention is presently given to a preparation method in which an overlayer of the nitride is always occluded; this protects the oxide through most of the thinning that specimen preparation entails. An XTEM image of the oxide/nitride interface is presented.

  18. XPS Study of SiO2 and the Si/SiO2 Interface

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

    1982-01-01

    X-ray photoelectron spectroscopy (XPS) is analytical technique for understanding electronic structure of atoms close to surface in solids, in preference to bulk structure of material. Study found evidence for core-level chemical shifts arising from changes in local structural environment in amorphous SiO2 and at Si/SiO2 interface. Observed XPS spectra may be understood as sequential convolution of several functions, each with well-defined physical interpretation.

  19. First-principles study of the threshold effect in the electronic stopping power of LiF and SiO2 for low-velocity protons and helium ions

    NASA Astrophysics Data System (ADS)

    Mao, Fei; Zhang, Chao; Dai, Jinxia; Zhang, Feng-Shou

    2014-02-01

    Nonadiabatic dynamics simulations are performed to investigate the electronic stopping power of LiF and SiO2-cristobalite-high crystalline thin films when protons and helium ions are hyperchanneling in the <001> axis. In this theoretical framework, ab initio time-dependent density-functional theory calculations for electrons are combined with molecular dynamics simulations for ions in real time and real space. The energy transfer process between the ions and the electronic subsystem of LiF and SiO2 nanostructures is studied. The velocity-proportional stopping power of LiF and SiO2 for protons and helium ions is predicted in the low-energy range. The measured velocity thresholds of protons in LiF and SiO2, and helium ions in LiF are reproduced. The convergence of the threshold effect with respect to the separation of grid points is confirmed. The underlying physics of the threshold effect is clarified by analyzing the conduction band electron distribution. In addition, the electron transfer processes between the projectile ions and solid atoms in hyperchanneling condition are studied, and its effects on the energy loss is investigated.

  20. Synthesis of superamphiphobic breathable membranes utilizing SiO2 nanoparticles decorated fluorinated polyurethane nanofibers.

    PubMed

    Wang, Jialin; Raza, Aikifa; Si, Yang; Cui, Lingxiao; Ge, Jianfeng; Ding, Bin; Yu, Jianyong

    2012-12-01

    Superamphiphobic nanofibrous membranes exhibiting robust water/oil proof and breathable performances were prepared by the combination of a novel synthesized fluorinated polyurethane (FPU) containing a terminal perfluoroalkane segment and incorporated SiO(2) nanoparticles (SiO(2) NPs). By employing the FPU/SiO(2) NPs incorporation, the hybrid membranes possess superhydrophobicity with a water contact angle of 165° and superoleophobicity with an oil contact angle of 151°. Surface morphological studies have indicated that the wettability of resultant membranes could be manipulated by tuning the surface composition as well as the hierarchical structures. The quantitative hierarchical roughness analysis using N(2) adsorption method has confirmed a major contribution of SiO(2) NPs on enhancing the porous structure, and a detailed correlation between the fractal dimension and amphiphobicity is proposed. Furthermore, a designed concept test shows that the as-prepared membranes could load 1.5 kg water or oil at the same time maintained an extremely high air permeability of 2 L min(-1), suggesting their use as promising materials for a variety of potential applications in protective clothing, bioseparation, water purification, tissue engineering, microfluidic systems, etc., and also provided new insight into the design and development of functional hybrid membranes based on FPU. PMID:23108344

  1. Electrodialysis heterogeneous ion exchange membranes modified by SiO2 nanoparticles: fabrication and electrochemical characterization.

    PubMed

    Hosseini, S M; Ahmadi, Z; Nemati, M; Parvizian, F; Madaeni, S S

    2016-01-01

    In the current study mixed matrix heterogeneous cation exchange membranes were prepared by solution casting technique. The effect of SiO(2) nanoparticles in the polymeric solution on the physicochemical properties of prepared membranes was studied. Scanning optical microscope images showed uniform particle distribution and relatively uniform surfaces for the prepared membranes. The membrane water content was reduced by silica nanoparticles in the membranes' matrix. The membrane ion exchange capacity, membrane potential, transport number and selectivity were improved initially by an increase of SiO(2) nanoparticles concentration up to 1%wt in prepared membranes and then showed a decreasing trend with a further increase in additive ratio from 1 to 4%wt. The ionic permeability and flux were also decreased initially by an increase of silica nanoparticles concentration up to 0.5%wt in the membrane matrix and then increased again with a further increase in nanoparticles concentration from 0.5 to 4%wt. Moreover, the results exhibited that using silica nanoparticles in the membrane matrix caused an obvious decrease in areal electrical resistance. The opposite trend was found for membrane mechanical strength using SiO(2) nanoparticles. PMID:27148708

  2. SiO2 nanoparticles change colour preference and cause Parkinson's-like behaviour in zebrafish

    PubMed Central

    Li, Xiang; Liu, Bo; Li, Xin-Le; Li, Yi-Xiang; Sun, Ming-Zhu; Chen, Dong-Yan; Zhao, Xin; Feng, Xi-Zeng

    2014-01-01

    With advances in the development of various disciplines, there is a need to decipher bio-behavioural mechanisms via interdisciplinary means. Here, we present an interdisciplinary study of the role of silica nanoparticles (SiO2-NPs) in disturbing the neural behaviours of zebrafish and a possible physiological mechanism for this phenomenon. We used adult zebrafish as an animal model to evaluate the roles of size (15-nm and 50-nm) and concentration (300 μg/mL and 1000 μg/mL) in SiO2-NP neurotoxicity via behavioural and physiological analyses. With the aid of video tracking and data mining, we detected changes in behavioural phenotypes. We found that compared with 50-nm nanosilica, 15-nm SiO2-NPs produced greater significant changes in advanced cognitive neurobehavioural patterns (colour preference) and caused potentially Parkinson's disease-like behaviour. Analyses at the tissue, cell and molecular levels corroborated the behavioural results, demonstrating that nanosilica acted on the retina and dopaminergic (DA) neurons to change colour preference and to cause potentially Parkinson's disease-like behaviour. PMID:24448416

  3. Properties of SiO2 Aerogels Suitable for Astrophysical Experiments

    NASA Astrophysics Data System (ADS)

    Sublett, S. L.; Knauer, J. P.; Meyerhofer, D. D.; Skupsky, S.; Frank, A.; Poludnenko, A. Y.

    2001-10-01

    We are studying inhomogenieties in SiO2 aerogel. The aerogel has been treated in our hydrodynamic simulations as a material with uniform density but is modeled to grow by diffusion-limited cluster-cluster aggregation (DLCA) during the sol-gel process. We have modified DLCA FORTRAN code to grow a SiO2 aerogel model to be used as input in established hydrodynamic code in order to calculate the propagation of a converging conical shock wave through the foam. The foam has an average density of 100 mg/cm^3 and consists of roughly spherical globules of SiO2 molecules with an average radius of 100 nm±5 nm. This foam is being tested for plasma jet experiments relevant to astrophysics in which a conical shock wave propagating through the foam is driven by one to six OMEGA laser beams. Fluid downstream of the shock wave is forced through an aperture to create a plasma jet imaged by self-emission and silicon x-ray absorption. This work was supported by the U.S. Department of Energy Office of Inertial Confinement Fusion under Cooperative Agreement No. DE-FC03-92SF19460.

  4. Synthesis and characterization of Fe3O4-SiO2-AgCl photocatalyst

    NASA Astrophysics Data System (ADS)

    Husni, H. N.; Mahmed, N.; Ngee, H. L.

    2016-07-01

    Magnetite-silica-silver chloride (Fe3O4-SiO2-AgCl) coreshell particles with AgCl crystallite size of 117 nm was prepared by a wet chemistry method at ambient temperature. The magnetite-core was synthesized by using iron (II) sulfate heptahydrate (FeSO4•7H2O) and iron (III) sulfate hydrate (Fe2(SO4)3) with ammonium hydroxide (NH4OH) as the precipitating agent. The silica-shell was synthesized by using a modified Stöber process. The silver ions (Ag+) was adsorbed onto the silica surface after Söber process, followed by the addition of Cl- and polyvinylpyrrolidone (PVP) for the formation of Fe3O4-SiO2-AgCl coreshell particles. The effectiveness of the synthesized photocatalyst was investigated by monitoring the degradation of the methylene blue (MB) under sunlight for five cycles. About 90 % of the MB solution can be degraded after 2 hours. The degradation of MB solution by the Fe3O4-SiO2-AgCl particles is highly efficient for first three cycles according to the MB concentration recorded by the UV-Visible spectroscopy (UV-Vis). Nevertheless, the synthesized particles could be a promising material for photocatalytic applications.

  5. Synthesis and characterization of P δ-layer in SiO2 by monolayer doping

    NASA Astrophysics Data System (ADS)

    Arduca, Elisa; Mastromatteo, Massimo; De Salvador, Davide; Seguini, Gabriele; Lenardi, Cristina; Napolitani, Enrico; Perego, Michele

    2016-02-01

    Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ-layer embedded in a SiO2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 1014 atoms/cm2. Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 1017 cm2 s-1.

  6. Tetrakis(diethylamido) titanium (TDEAT) interactions with SiO 2 and Cu substrates

    NASA Astrophysics Data System (ADS)

    Tong, J.; Magtoto, N.; Kelber, J.

    2003-12-01

    X-ray photoelectron spectroscopy (XPS) is used to characterize the chemical interactions of tetrakis(diethylamido) titanium (TDEAT) with SiO 2 and Cu surfaces under ultrahigh vacuum (UHV) conditions. XPS studies show that TDEAT dissociatively chemisorbs on SiO 2 at room temperature or above, resulting in TiN bond scission, and TiO bond formation. No Ti carbide or Si carbide formation is observed. In the presence of co-adsorbed NH 3, TiN bond formation is enhanced and is stable at temperature up to 900 K in UHV. Continuous exposures of TDEAT on SiO 2 at 500 K produce both Ti oxides and nitride formation. The presence of an overpressure of NH 3 enhances Ti nitride formation. In contrast, TDEAT physisorbed on Cu at 120 K and annealed to 500 K results in desorption of Ti-containing species from the surface. Successive exposures of TDEAT on Cu at 500 K yield a Ti-alkyl reaction product. The presence of NH 3 does not significantly alter TDEAT interaction with Cu.

  7. Researching the silicon direct wafer bonding with interfacial SiO2 layer

    NASA Astrophysics Data System (ADS)

    Xiaoqing, Wang; Yude, Yu; Jin, Ning

    2016-05-01

    A silicon wafer direct bonding with a thin SiO2 layer at the interface was investigated. An atomic force microscope (AFM) was employed to characterize the surface roughness and a shearing test was carried out to evaluate the bonding strength. Experiments were performed to analyze the relations of surface roughness and bonding strength with the thickness of SiO2 which was grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) respectively. The bonding strength can reach up to 18 MPa for thermal oxidation and 8 MPa for PECVD after a 2-h 400 °C annealing. Results indicate that the bonding strength is negatively correlated to the thickness of SiO2 at the interface, which is important in designing the MEMS-based devices and other devices built with wafer direct bonding. Project supported by the Key Program of the National Natural Science Foundation of China (No. 61334008) and the National Natural Science Foundation of China (No. 61376072).

  8. Molecular self-assembly on graphene on SiO2 and h-BN substrates.

    PubMed

    Järvinen, Päivi; Hämäläinen, Sampsa K; Banerjee, Kaustuv; Häkkinen, Pasi; Ijäs, Mari; Harju, Ari; Liljeroth, Peter

    2013-07-10

    One of the suggested ways of controlling the electronic properties of graphene is to establish a periodic potential modulation on it, which could be achieved by self-assembly of ordered molecular lattices. We have studied the self-assembly of cobalt phthalocyanines (CoPc) on chemical vapor deposition (CVD) grown graphene transferred onto silicon dioxide (SiO2) and hexagonal boron nitride (h-BN) substrates. Our scanning tunneling microscopy (STM) experiments show that, on both substrates, CoPc forms a square lattice. However, on SiO2, the domain size is limited by the corrugation of graphene, whereas on h-BN, single domain extends over entire terraces of the underlying h-BN. Additionally, scanning tunneling spectroscopy (STS) measurements suggest that CoPc molecules are doped by the substrate and that the level of doping varies from molecule to molecule. This variation is larger on graphene on SiO2 than on h-BN. These results suggest that graphene on h-BN is an ideal substrate for the study of molecular self-assembly toward controlling the electronic properties of graphene by engineered potential landscapes. PMID:23786613

  9. Spreading of the combustion wave in SiO2-Al systems

    NASA Astrophysics Data System (ADS)

    Maltsev, Vladimir M.; Gafiyatulina, Galina P.; Tavrov, Alexander V.

    1997-11-01

    The process of self-propagating high-temperature synthesis (SHS) has been applied as the new technology for production of construction materials and especial refractories with enhanced strength- and fire-resisting properties. These materials are aimed to be used as synthetic mullits lining refractories in heat units. In the visible light range, the following characteristics of SHS process have been investigated: the localization and the temperature of initiating of SHS process,the propagation of SHS wave on surface- or in volume, velocities of spreading of combustion wave, the number of SHS reaction stages. The visualization with a video-recording of the combustion wave of the SHS process has been performed inside the muffle furnace. The video has been processed with computer card of frame grabber and has been analyzed in multivideo mode, where each frame had been captured in fixed time interval. Thus, several mixtures of SiO2-Al have been studied by variation of: the SiO2 particle size,the stoichiometric coefficient, by the substitution of the SiO2 to ashes and kaolin, and by the adding of supplementary components like Fe2O3. The SHS reactions are processed by the preliminary heating to the temperature of 650-860 degrees C. The local thermal self initiating of the SHS process and its propagation in the volume of a sample have been visualized. The multistage SHS reaction has been identified.

  10. XANES studies of photocatalytic active species in nano TiO 2-SiO 2

    NASA Astrophysics Data System (ADS)

    Li Hsiung, Tung; Paul Wang, H.; Wang, H. C.

    2006-11-01

    Combined post-edge XANES (X-ray absorption near-edge structural) and 29Si magic angle spinning solid-state nuclear magnetic resonance (MAS SSNMR) observations show that Ti was dispersed in the frameworks of nano SiO 2 (synthesized with the sol-gel method). In addition, the nano TiO 2-SiO 2 photocatalyst have features such as A1 (4969 eV), A2 (4970.5 eV) and A3 (4972 eV) that can be attributed to 1s-to-3d transitions for four- (TiO 4), five- ((Ti=O)O 4), and six- (TiO 6) coordinated Ti species, respectively. The A2 ((Ti=O)O 4) in TiO 2-SiO 2 may be the main active species, for instance, in the photocatalytic decomposition of trace 2-chlorophenol in H 2O. This work exemplifies the utilization of XANES to reveal the active species in nano photocatalysts in detail.

  11. SiO2 nanoparticles change colour preference and cause Parkinson's-like behaviour in zebrafish.

    PubMed

    Li, Xiang; Liu, Bo; Li, Xin-Le; Li, Yi-Xiang; Sun, Ming-Zhu; Chen, Dong-Yan; Zhao, Xin; Feng, Xi-Zeng

    2014-01-01

    With advances in the development of various disciplines, there is a need to decipher bio-behavioural mechanisms via interdisciplinary means. Here, we present an interdisciplinary study of the role of silica nanoparticles (SiO2-NPs) in disturbing the neural behaviours of zebrafish and a possible physiological mechanism for this phenomenon. We used adult zebrafish as an animal model to evaluate the roles of size (15-nm and 50-nm) and concentration (300 μg/mL and 1000 μg/mL) in SiO2-NP neurotoxicity via behavioural and physiological analyses. With the aid of video tracking and data mining, we detected changes in behavioural phenotypes. We found that compared with 50-nm nanosilica, 15-nm SiO2-NPs produced greater significant changes in advanced cognitive neurobehavioural patterns (colour preference) and caused potentially Parkinson's disease-like behaviour. Analyses at the tissue, cell and molecular levels corroborated the behavioural results, demonstrating that nanosilica acted on the retina and dopaminergic (DA) neurons to change colour preference and to cause potentially Parkinson's disease-like behaviour. PMID:24448416

  12. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates

    PubMed Central

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-01-01

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V−1, that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting. PMID:26108468

  13. Laser-induced vibration of a thin soap film.

    PubMed

    Emile, Olivier; Emile, Janine

    2014-09-21

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free-standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be employed in an optofluidic diaphragm pump, the interfaces behaving like a vibrating membrane and the liquid in-between being the fluid to be pumped. Such a pump could then be used in delicate micro-equipment, in chips where temperature variations are detrimental and even in biological systems. PMID:25017934

  14. Physiological responses induced by emotion-eliciting films.

    PubMed

    Fernández, Cristina; Pascual, Juan C; Soler, Joaquim; Elices, Matilde; Portella, Maria J; Fernández-Abascal, Enrique

    2012-06-01

    Emotion-eliciting films are commonly used to evoke subjective emotional responses in experimental settings. The main aim of the present study was to investigate whether a set of film clips with discrete emotions were capable to elicit measurable objective physiological responses. The convergence between subjective and objective measures was evaluated. Finally, the effect of gender on emotional responses was investigated. A sample of 123 subjects participated in the study. Individuals were asked to view a set of emotional film clips capable to induce seven emotions: anger, fear, sadness, disgust, amusement, tenderness and neutral state. Skin conductance level (SCL), heart rate (HR) and subjective emotional responses were measured for each film clip. In comparison with neutral films, SCL was significantly increased after viewing fear films, and HR was also significantly incremented for anger and fear films. Physiological variations were associated with arousal measures indicating a convergence between subjective and objective reactions. Women appeared to display significantly greater SCL and HR responses for films inducing sadness. The findings suggest that physiological activation would be more easily induced by emotion-eliciting films that tap into emotions with higher subjective arousal such as anger and fear. PMID:22311202

  15. Concentration effect of Tm3+ on cathodoluminescence properties of SiO2:Tm3+ and SiO2:Ho3+,Tm3+ systems

    NASA Astrophysics Data System (ADS)

    Dhlamini, M. S.; Mhlongo, G. H.; Swart, H. C.; Ntwaeaborwa, O. M.; Hillie, K. T.

    2012-05-01

    Cathodoluminescence (CL) properties of SiO2 powders activated with thulium (Tm3+) and holmium (Ho3+) ions prepared by a sol-gel process were investigated. Different molar concentrations of Tm3+ co-doped with Ho3+ were studied. The 460 nm peak was monitored and the influence of the beam energy and concentration of Tm3+ ions on the emission properties of this peak was also monitored. The peculiar behavior whereby the 460 nm emission peak decreases and the increase in the 705 and 865 nm peaks with the increase in the concentration of Tm3+ ions is reported. The relationship between the accelerating beam voltage and the CL intensity of the blue emission peak (460 nm peak) is established. Morphology, particle size and optical properties were characterized with Scanning electron microscopy (SEM), UV/VIS Lambda 750 S spectrometer and Auger electron spectroscopy (AES) equipped with Ocean Optics S2000, respectively.

  16. Synthesis of SiO2 coated NiFe2O4 nanoparticles and the effect of SiO2 shell thickness on the magnetic properties

    NASA Astrophysics Data System (ADS)

    Coşkun, M.; Korkmaz, M.; Fırat, T.; Jaffari, G. H.; Shah, S. I.

    2010-05-01

    In this work, the results of synthesis of core-shell NiFe2O4 nanoparticles and influence of silica coating on the magnetic properties of nanoparticles are presented. Spherical NiFe2O4 nanoparticles were prepared via a normal micelles process. NiFe2O4 nanoparticles homogeneously coated with SiO2 of various shell thickness were synthesized by reverse microemulsion. The interparticle spacing was varied by changing the amount of added tetraethylorthosilicate. The microstructures and morphologies of these nanoparticles were studied by x-ray diffraction and transmission electron microscopy techniques. The magnetic parameters such as saturation magnetizations, blocking temperatures, and magnetic anisotropies have been calculated from dc magnetization and ac susceptibility measurements.

  17. Self-cleaning cotton functionalized with TiO2/SiO2: focus on the role of silica.

    PubMed

    Pakdel, Esfandiar; Daoud, Walid A

    2013-07-01

    This manuscript aims to investigate the functionalization of cotton fabrics with TiO2/SiO2. In this study, the sol-gel method was employed to prepare titania and silica sols and the functionalization was carried out using the dip-pad-dry-cure process. Titanium tetra isopropoxide (TTIP) and tetra ethyl orthosilicate (TEOS) were utilized as precursors of TiO2 and SiO2, respectively. TiO2/SiO2 composite sols were prepared in three different Ti:Si molar ratios of 1:0.43, 1:1, and 1:2.33. The self-cleaning property of cotton samples functionalized with TiO2/SiO2 was assessed based on the coffee stain removal capability and the decomposition rate of methylene blue under UV irradiation. FTIR study of the TiO2/SiO2 photocatalyst confirmed the existence of Si-O-Si and Ti-O-Si bonds. Scanning electron microscopy was employed to investigate the morphology of the functionalized cotton samples. The samples coated with TiO2/SiO2 showed greater ability of coffee stain removal and methylene blue degradation compared with samples functionalized with TiO2 demonstrating improved self-cleaning properties. The role of SiO2 in improving these properties is also discussed. PMID:23602671

  18. Li sbnd δ 18O sbnd SiO 2 systematics in volcanic rocks and mafic lower crustal granulite xenoliths

    NASA Astrophysics Data System (ADS)

    Mengel, K.; Hoefs, J.

    1990-11-01

    Li sbnd δ 18O sbnd SiO 2 relationships have been examined for suites of spilitized basaltic rocks (DSDP 504B; Xigaze Ophiolite; Blanco Fracture Zone; Greater Caucasus; Rhenohercynian Fold Belt) and intra-plate evolved tholeiites (Northern Hessian Depression and Vogelsberg, W Germany; Mount Falla, Transantarctic Mountains). Relative to unaltered MORB and intra-plate primary olivine tholeiites, both the spilitic rocks and the evolved tholeiites are characterized by Li and 18O enrichment. For the spilitic rocks, Li and 18O enrichment is accompanied by a loss of SiO 2 as a result of seawater hydrothermal alteration, whereas the evolved tholeiites have gained SiO 2, Li and 18O from fractionation of mafic phases and assimilation of crustal rocks. On Li vs. SiO 2 and δ 18O vs. SiO 2 diagrams, the two rock groups plot largely in distinct fields, suggesting the possibility of so distinguishing between such lithologies in the ancient rock record. Mafic granulite xenoliths from the Northern Hessian Depression have elevated Li and 18O abundances at low SiO 2 contents. Even after correction for extraction of felsic components, their Li sbnd δ 18O sbnd SiO 2 signatures plot within the field of spilitic protoliths, suggesting that the lower crust in this region contains relics of spilitic rocks from a former oceanic crust.

  19. SiO2/TiO2/Ag multilayered microspheres: Preparation, characterization, and enhanced infrared radiation property

    NASA Astrophysics Data System (ADS)

    Ye, Xiaoyun; Cai, Shuguang; Zheng, Chan; Xiao, Xueqing; Hua, Nengbin; Huang, Yanyi

    2015-08-01

    SiO2/TiO2/Ag core-shell multilayered microspheres were successfully synthesized by the combination of anatase of TiO2 modification on the surfaces of SiO2 spheres and subsequent Ag nanoparticles deposition and Ag shell growth with face-centered cubic (fcc) Ag. The composites were characterized by TEM, FT-IR, UV-vis, Raman spectroscopy and XRD, respectively. The infrared emissivity values during 8-14 μm wavelengths of the composites were measured. The results revealed that TiO2 thin layers with the thickness of ∼10 nm were coated onto the SiO2 spheres of ∼220 nm in diameter. The thickness of the TiO2 layers was controlled by varying the amount of TBOT precursor. Homogeneous Ag nanoparticles of ∼20 nm in size were successfully deposited by ultrasound on the surfaces of SiO2/TiO2 composites, followed by complete covering of Ag shell. The infrared emissivity value of the SiO2/TiO2 composites was decreased than that of pure SiO2. Moreover, the introduction of the Ag brought the remarkably lower infrared emissivity value of the SiO2/TiO2/Ag multilayered microspheres with the lowest value down to 0.424. Strong chemical effects in the interface of SiO2/TiO2 core-shell composites and high reflection performance of the metal Ag are two decisive factors for the improved infrared radiation performance of the SiO2/TiO2/Ag multilayered microspheres.

  20. Antibacterial activity of large-area monolayer graphene film manipulated by charge transfer

    PubMed Central

    Li, Jinhua; Wang, Gang; Zhu, Hongqin; Zhang, Miao; Zheng, Xiaohu; Di, Zengfeng; Liu, Xuanyong; Wang, Xi

    2014-01-01

    Graphene has attracted increasing attention for potential applications in biotechnology due to its excellent electronic property and biocompatibility. Here we use both Gram-positive Staphylococcus aureus (S. aureus) and Gram-negative Escherichia coli (E. coli) to investigate the antibacterial actions of large-area monolayer graphene film on conductor Cu, semiconductor Ge and insulator SiO2. The results show that the graphene films on Cu and Ge can surprisingly inhibit the growth of both bacteria, especially the former. However, the proliferation of both bacteria cannot be significantly restricted by the graphene film on SiO2. The morphology of S. aureus and E. coli on graphene films further confirms that the direct contact of both bacteria with graphene on Cu and Ge can cause membrane damage and destroy membrane integrity, while no evident membrane destruction is induced by graphene on SiO2. From the viewpoint of charge transfer, a plausible mechanism is proposed here to explain this phenomenon. This study may provide new insights for the better understanding of antibacterial actions of graphene film and for the better designing of graphene-based antibiotics or other biomedical applications. PMID:24619247

  1. Antibacterial activity of large-area monolayer graphene film manipulated by charge transfer

    NASA Astrophysics Data System (ADS)

    Li, Jinhua; Wang, Gang; Zhu, Hongqin; Zhang, Miao; Zheng, Xiaohu; di, Zengfeng; Liu, Xuanyong; Wang, Xi

    2014-03-01

    Graphene has attracted increasing attention for potential applications in biotechnology due to its excellent electronic property and biocompatibility. Here we use both Gram-positive Staphylococcus aureus (S. aureus) and Gram-negative Escherichia coli (E. coli) to investigate the antibacterial actions of large-area monolayer graphene film on conductor Cu, semiconductor Ge and insulator SiO2. The results show that the graphene films on Cu and Ge can surprisingly inhibit the growth of both bacteria, especially the former. However, the proliferation of both bacteria cannot be significantly restricted by the graphene film on SiO2. The morphology of S. aureus and E. coli on graphene films further confirms that the direct contact of both bacteria with graphene on Cu and Ge can cause membrane damage and destroy membrane integrity, while no evident membrane destruction is induced by graphene on SiO2. From the viewpoint of charge transfer, a plausible mechanism is proposed here to explain this phenomenon. This study may provide new insights for the better understanding of antibacterial actions of graphene film and for the better designing of graphene-based antibiotics or other biomedical applications.

  2. Tribological evaluation of an Al2O3-SiO2 ceramic fiber candidate for high temperature sliding seals

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Steinetz, Bruce

    1994-01-01

    A test program to determine the relative sliding durability of an alumina-silica candidate ceramic fiber for high temperature sliding seal applications is described. Pin-on-disk tests were used to evaluate the potential seal material by sliding a tow or bundle of the candidate ceramic fiber against a superalloy test disk. Friction was measured during the tests and fiber wear, indicated by the extent of fibers broken in the tow or bundle, was measured at the end of each test. Test variables studied included ambient temperatures from 25 to 900 C, loads from 1.3 to 21.2 N, and sliding velocities from 0.025 to 0.25 m/sec. In addition, the effects of fiber diameter and elastic modulus on friction and wear were measured. Thin gold films deposited on the superalloy disk surface were evaluated in an effort to reduce friction and wear of the fibers. In most cases, wear increased with test temperature. Friction ranged from 0.36 at 500 C and low velocity (0.025 m/sec) to over 1.1 at 900 C and high velocity (0.25 m/sec). The gold films resulted in satisfactory lubrication of the fibers at 25 C. At elevated temperatures diffusion of substrate elements degraded the films. These results indicate that the alumina-silica (Al2O3-SiO2) fiber is a good candidate material system for high temperature sliding seal applications. More work is needed to reduce friction.

  3. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  4. Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation

    NASA Astrophysics Data System (ADS)

    Baek, Chang-Ki; Kang, Daegun; Kim, JeongSik; Jin, Bo; Rim, Taiuk; Park, Sooyoung; Meyyappan, M.; Jeong, Yoon-Ha; Lee, Jeong-Soo

    2013-02-01

    The resistive switching and low frequency noise characteristics in In2Se3 nanowire PRAM devices with SiO2 passivation have been studied. The SiO2 passivation of the nanowires was adopted to lessen the thermal energy dissipation to the surroundings and as a result, the set/reset voltages and the corresponding power requirements have been reduced. The measured low frequency noise characteristics exhibit a typical 1/f noise behavior and show the same noise level after the SiO2 passivation.

  5. Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

    NASA Astrophysics Data System (ADS)

    Al'zhanova, A.; Dauletbekova, A.; Komarov, F.; Vlasukova, L.; Yuvchenko, V.; Akilbekov, A.; Zdorovets, M.

    2016-05-01

    The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.

  6. Fabrication of charged membranes by the solvent-assisted lipid bilayer (SALB) formation method on SiO2 and Al2O3.

    PubMed

    Tabaei, Seyed R; Vafaei, Setareh; Cho, Nam-Joon

    2015-05-01

    In this study, we employed the solvent-assisted lipid bilayer (SALB) formation method to fabricate charged membranes on solid supports. The SALB formation method exploits a ternary mixture of lipid-alcohol-aqueous buffer to deposit lamellar phase structures on solid supports upon gradual increase of the buffer fraction. Using the quartz crystal microbalance with dissipation (QCM-D) technique, we investigated the formation of negatively and positively charged membranes via the SALB formation method and directly compared with the vesicle fusion method on two different oxide films. Bilayers containing an increasing fraction of negatively charged DOPS lipid molecules were successfully formed on both SiO2 and Al2O3 substrates using the SALB formation method at physiological pH (7.5). In contrast, the vesicle fusion method did not support bilayer formation on Al2O3 and those containing more than 10% DOPS ruptured on SiO2 only under acidic conditions (pH 5). Characterization of the fraction of negatively charge DOPS by in situ annexin 5A binding assay revealed that the fraction of DOPS lipid molecules in the bilayers formed on Al2O3 is significantly higher than that formed on SiO2. This suggests that the SALB self-assembly of charged membranes is predominantly governed by the electrostatic interaction. Furthermore, our findings indicate that when multicomponent lipid mixtures are used, the relative fraction of lipids in the bilayer may differ from the fraction of lipids in the precursor mixture. PMID:25858554

  7. Self-assembly of SiO2/Gd-DTPA-polyethylenimine nanocomposites as magnetic resonance imaging probes.

    PubMed

    Luo, Kui; Tian, Jing; Liu, Gang; Sun, Jiayu; Xia, Chunchao; Tang, Hehan; Lin, Ling; Miao, Tianxin; Zhao, Xuna; Gao, Fabao; Gong, Qiyong; Song, Bin; Shuai, Xintao; Ai, Hua; Gu, Zhongwei

    2010-01-01

    Controlled self-assembly of organic/inorganic magnetic hybrid materials have important applications in magnetic resonance imaging (MRI). In this study, a widely used polycation polyethylenimine was conjugated with gadopentetic acid (Gd-DTPA) as a gadolinium bearing polyelectrolyte (Gd-DTPA-PEI). Next, multilayers of Gd-DTPA-PEI were coated on silica nanoparticles through layer-by-layer (LbL) self-assembly with polyanions as monitored by dynamic light scattering, zeta-potential, and scanning electron microscopy. The thickness of the multilayer film was estimated from quartz crystal microbalance based on counting frequency change of each adsorbed layer. The magnetic relaxation of SiO2/(Gd-DTPA-PEl/polyanion), core-shell nanocomposite was tested at 1.5 T magnetic field in a clinical MRI scanner, and a 3-fold increase in T1 relaxivity to 15.1 Gd mM(-1)s(-1) was noticed comparing to Gd-DTPA small molecules. Dextran sulfate was coated as the outermost layer on the nanocomposite for better biocompatibility as verified by in vitro cytotoxicity studies. This formulation provides good signal intensity enhancement of mouse liver in vivo with only 1/25 dose of clinical standard at 30 and 60 minutes after intravenous injection. This sensitive imaging probe with unique core-shell structures may find broad applications in cellular and molecular imaging. PMID:20352889

  8. Distribution of nitrogen and defects in SiO(x)N(y)/Si structures formed by the thermal nitridation of SiO2/Si

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.

    1986-01-01

    Previously reported nitrogen distributions in SiO2 films on Si which have been thermally nitrided at 1000 C have been explained by a kinetic model of the nitridation process which rests upon the effects of interfacial strain. A critical test of this kinetic model is the validity of the predictions regarding nitrogen distributions obtained at other nitridation temperatures. In this work, nitrogen distributions determined via X-ray photoelectron spectroscopy are reported for samples nitrided at 800 and 1150 C, and are shown to be consistent with the kinetic model. In addition, the intensity of a fluorine marker is found to correlate with the nitrogen distribution, and is postulated to be related to kinetically generated defects in the dielectric film, consistent with the strain-dependent energy of formation of defects proposed recently to explain electrical data.

  9. In situ and air index measurements: influence of the deposition parameters on the shift of TiO2/SiO2 Fabry-Perot filters.

    PubMed

    Schmitt, B; Borgogno, J P; Albrand, G; Pelletier, E

    1986-11-01

    We measure the refractive index of thin films of TiO2 and SiO2 for given deposition parameters. Two complementary methods are used. The first is a postdeposition technique which uses the measurements of reflectance and transmittance in air. The second, in contrast, makes use of in situ measurements (under vacuum and during the actual deposition of the layer). The differences between the values deduced from the two methods can be explained by the amount of atmospheric moisture adsorbed by films. One tries to minimize these shifts for the two materials by choosing deposition parameters. The difficulties come from the absorption losses which must be as small as possible. We use the measured refractive indices of individual layers to give good numerical prediction of the wavelength shift (observed during the admittance of air after deposition in the vacuum chamber) of the transmittance peak of multidielectric Fabry-Perot filters. PMID:18235719

  10. Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO-Al2O3-SiO2 System

    NASA Astrophysics Data System (ADS)

    Zhang, Jihua; Zhen, Shanxue; Yang, Lijun; Lou, Feizhi; Chen, Hongwei; Yang, Chuanren

    2011-01-01

    The rough surface of ceramic substrate is an obstacle for the scale down of line-width for thin film passive integrated devices (PID). In this paper, a modification method for Al2O3 ceramic substrate with super smooth in surface was proposed. Coating a layer of CaO-Al2O3-SiO2 (CAS) glass was performed to flat the rough surface of alumina substrate by sol-gel method. It was found that addition of 0.06% V2O5 can inhibit the recrystallization of the glaze. The root-mean-square (RMS) roughness of the glazed substrates reached a surprising flatness as small as 0.5 nm, and its melting temperature is higher than 1300 °C. This substrate with super flatness and high temperature endurance may be promising for high performance thin film devices.

  11. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films

    SciTech Connect

    Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L.; Schwank, J.R.

    1999-03-02

    It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).

  12. Electron escape depth variation in thin SiO2 films measured with variable photon energy

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Grunthaner, F. J.; Pianetta, P.; Johansson, L. I.; Lindau, I.

    1984-01-01

    A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.

  13. Shear-induced morphology in mixed phospholipid films

    NASA Astrophysics Data System (ADS)

    Hirsa, Amir; Young, James; Posada, David; Lopez, Juan

    2014-11-01

    Flow of mixed phospholipid films on liquid surfaces plays a significant role in biological processes ranging from lipid bilayer fluidity and the associated behavior of cellular membranes, to flow on the liquid lining in the lungs. Phospholipid films are also central to the process of two-dimensional protein crystallization below a ligand-bearing film. Here, we study a binary mixture of phospholipids that form an insoluble monolayer on the air-water interface. Brewster angle microscopy reveals that a shearing flow induces a phase separation in the binary film, resulting in the appearance of 10 micron-scale dark domains. Hydrodynamic response of the binary film is quantified at the macro-scale by measurements of the surface shear viscosity, via a deep-channel surface viscometer. Reynolds number was shown to be a state variable, along with surface pressure, controlling the surface shear viscosity of a biotinylated lipid film.

  14. Thermally induced optical nonlinearity during transient heating of thin films

    SciTech Connect

    Chen, G. ); Tien, C.L. )

    1994-05-01

    This work studies the temperature field and the optical response of weakly absorbing thin films with thermally induced optical nonlinearity during picosecond to nanosecond pulsed-laser heating. A one-dimensional model is presented that examines the effects of the temperature dependent optical constants and the nonuniform absorption caused by interference. The energy equation is solved numerically, coupled with the matrix method in optical multilayer theory. Both cadmium sulfide (CdS) thin films and a zinc selenide (ZnSe) interference filter are considered. The computational results compare favorably with available experimental data on the ZnSe interference filter. This study shows that the transient temperature distributions in the films are highly nonuniform. Such nonuniformity yields Airy's formulae for calculating the thin-film reflectance and transmittance inapplicable. Applications of the work include optical bistability, localized change of the film structure, and measurement of the thermal diffusivity of thin films. 31 refs., 7 figs., 1 tab.

  15. Hydration-Induced Phase Transitions in Surfactant and Lipid Films.

    PubMed

    Björklund, Sebastian; Kocherbitov, Vitaly

    2016-05-31

    For several surfactant and lipid systems, it is crucial to understand how hydration influences the physical and chemical properties. When humidity changes, it affects the degree of hydration by adding or removing water molecules. In many cases, this process induces transitions between liquid crystalline phases. This phenomenon is of general interest for numerous applications simply because of the fact that humidity variations are ubiquitous. Of particular interest are hydration-induced phase transitions in amphiphilic films, which in many cases appear as the frontier toward a vapor phase with changing humidity. Considering this, it is important to characterize the film thickness needed for the formation of 3D liquid crystalline phases and the lyotropic phase behavior of this kind of film. In this work, we study this issue by employing a recently developed method based on the humidity scanning quartz crystal microbalance with dissipation monitoring (HS QCM-D), which enables continuous scanning of the film hydration. We investigate five surfactants films (DDAO, DTAC, CTAC, SDS, and n-octylβ-d-glucoside) and one lipid film (monoolein) and show that HS QCM-D enables the fast characterization of hydration-induced phase transitions with small samples. Film thicknesses range from tens to hundreds of nanometers, and clear phase transitions are observed in all cases. It is shown that phase transitions in films occur at the same water activities as for corresponding bulk samples. This allows us to conclude that surfactant and lipid films, with a thickness of as low as 50 nm, are in fact assembled as 3D-structured liquid crystalline phases. Furthermore, liquid crystalline phases of surfactant films show liquidlike behavior, which decreases the accuracy of the absorbed water mass measurement. On the other hand, the monoolein lipid forms more rigid liquid crystalline films, allowing for an accurate determination of the water sorption isotherm, which is also true for the

  16. Synthesis of SiO2/3D porous carbon composite as anode material with enhanced lithium storage performance

    NASA Astrophysics Data System (ADS)

    Yuan, Zhinan; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Chunnian; He, Fang

    2016-05-01

    A SiO2/porous carbon nanocomposite was synthesized by a facile combined heat and acid treatments method. The nanocomposite featured a 3D porous carbon structure with amorphous SiO2 nanoparticles embedded in the wall of the pores. The microstructure improved the electrical conductivity, shortened the diffusion distance of lithium ions, and alleviated the volume expansion of SiO2 during Li intercalation. Accordingly, the SiO2/porous carbon nanocomposite displayed excellent cyclic performance with a high reversible capacity of 434 mAh g-1 after 50 cycles at 0.1 A g-1 and rate capability delivering a capacity of 187.4 mAh g-1 even at 5 A g-1.

  17. Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

    SciTech Connect

    Yuan, H. C.; Oh, J.; Zhang, Y.; Kuznetsov, O. A.; Flood, D. J.; Branz, H. M.

    2012-06-01

    We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements. Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.

  18. Selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation.

    PubMed

    Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui

    2015-12-30

    This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. PMID:26223016

  19. Synthesis of superamphiphobic breathable membranes utilizing SiO2 nanoparticles decorated fluorinated polyurethane nanofibers

    NASA Astrophysics Data System (ADS)

    Wang, Jialin; Raza, Aikifa; Si, Yang; Cui, Lingxiao; Ge, Jianfeng; Ding, Bin; Yu, Jianyong

    2012-11-01

    Superamphiphobic nanofibrous membranes exhibiting robust water/oil proof and breathable performances were prepared by the combination of a novel synthesized fluorinated polyurethane (FPU) containing a terminal perfluoroalkane segment and incorporated SiO2 nanoparticles (SiO2 NPs). By employing the FPU/SiO2 NPs incorporation, the hybrid membranes possess superhydrophobicity with a water contact angle of 165° and superoleophobicity with an oil contact angle of 151°. Surface morphological studies have indicated that the wettability of resultant membranes could be manipulated by tuning the surface composition as well as the hierarchical structures. The quantitative hierarchical roughness analysis using N2 adsorption method has confirmed a major contribution of SiO2 NPs on enhancing the porous structure, and a detailed correlation between the fractal dimension and amphiphobicity is proposed. Furthermore, a designed concept test shows that the as-prepared membranes could load 1.5 kg water or oil at the same time maintained an extremely high air permeability of 2 L min-1, suggesting their use as promising materials for a variety of potential applications in protective clothing, bioseparation, water purification, tissue engineering, microfluidic systems, etc., and also provided new insight into the design and development of functional hybrid membranes based on FPU.Superamphiphobic nanofibrous membranes exhibiting robust water/oil proof and breathable performances were prepared by the combination of a novel synthesized fluorinated polyurethane (FPU) containing a terminal perfluoroalkane segment and incorporated SiO2 nanoparticles (SiO2 NPs). By employing the FPU/SiO2 NPs incorporation, the hybrid membranes possess superhydrophobicity with a water contact angle of 165° and superoleophobicity with an oil contact angle of 151°. Surface morphological studies have indicated that the wettability of resultant membranes could be manipulated by tuning the surface composition as well as the hierarchical structures. The quantitative hierarchical roughness analysis using N2 adsorption method has confirmed a major contribution of SiO2 NPs on enhancing the porous structure, and a detailed correlation between the fractal dimension and amphiphobicity is proposed. Furthermore, a designed concept test shows that the as-prepared membranes could load 1.5 kg water or oil at the same time maintained an extremely high air permeability of 2 L min-1, suggesting their use as promising materials for a variety of potential applications in protective clothing, bioseparation, water purification, tissue engineering, microfluidic systems, etc., and also provided new insight into the design and development of functional hybrid membranes based on FPU. Electronic supplementary information (ESI) available: Detailed chemical synthesis routes and structural confirmation of FPU; movies S1 and S2. See DOI: 10.1039/c2nr32883f

  20. Trace-Element Constraints on Origin of SiO2-bearing Clasts in Ordinary Chondrites

    NASA Astrophysics Data System (ADS)

    Misawa, K.; Kanazawa, M.; Bridges, J. C.; Nakamura, N.; Hutchison, R.

    1995-09-01

    Silica-rich igneous-textured clasts are found in OC [1-6]. The SiO2-bearing clasts found in the Parnallee (LL3.6) and Farmington (L5) chondrites are isotopically unique [4-6]. They plot on a mixing line defined between UOC chondrules and an 16(sub)O-depleted end member in the oxygen three isotope diagram. We analyzed trace elements including REE by MSID technique for SiO2-bearing clasts (CB1, CB4, CB7, and CB8) from Parnallee. Some major and minor elements of CB8 were determined by AA or ICP-AES. The CI-chondrite normalized REE patterns of the clasts are shown in Fig. 1. CB8 has a high Si/Mg ratio (2.5), although its bulk Mg/(Mg + Fe) and Fe/Mn ratios (0.79 and 51, respectively) are within the range of chondritic values. Refractory elements Ca and Al are highly fractionated in CB8; the clast is enriched in Ca (3 x CI) but depleted in Al (0.7 x CI). CB1, CB4, and CB7 also show Ca enrichment (3-7 x CI). CB8 is depleted in moderately volatile lithophiles Mn, Na, K, and Rb (0.18-0.71 x CI), siderophile elements Fe, Co, and Ni (0.0041-0.39 x CI), and chalcophile element Zn (0.076 x CI). The SiO2-bearing clasts analyzed exhibit a gradual depletion from LREE to HREE (CI-normalized La/Lu ratios vary from 1.6 to 18) and a large positive Eu anomaly (Eu/Eu*=2.4-14) along with a depletion of La. This LREE/HREE fractionation is inversely correlated with SiO2 contents of the clasts. Abundance of Sr is parallel to that of Eu in CB8. However, Sr is depleted compared with Eu in the other clasts. These abundance patterns are quite different from those of typical ferromagnesian chondrules in UOCs, SiO2-bearing pyroxene-rich clast in Hedjaz (L3.7) [3], and silica-rich orthopyroxenite Bo-1 in Bovedy (L3) [7]. Absence of metal and sulfide, low abundances of siderophile and chalcophile elements in the clasts imply that metal and sulfide were removed from precursor material before or during clast formation. General REE patterns of SiO2-bearing clasts from Parnallee suggest that they were produced by igneous fractionation controlled by the plagioclase component. Extensive olivine extraction followed plagioclase crystallization from the residua may be able to explain the REE pattern of CB8 [5, 6]. However, simple fractional crystallization or extraction of partial melting liquid from a chondritic source could explain neither large fractionation of La/Lu nor enrichment of Eu relative to Sr observed in CB1, CB4, and CB7. Detailed fractionation processes occurred on a parent body still remain unsolved. References: [1] Olsen E. J. et al. (1981) EPSL, 56, 82-88. [2] Brigham C. A. et al. (1986) GCA, 50, 1655-1666. [3] Nakamura N. et al. (1990) EPSL, 99, 290-302. [4] Bridges J. C. et al. (1993) Meteoritics, 28, 329-330. [5] Bridges J. C. et al. (1994) Meteoritics, 29, 448-449. [6] Bridges J. C. et al. (1995) Meteoritics, submitted. [7] Ruzicka A. et al. (1995) Meteoritics, 30, 57-70.

  1. Microstructural characterization of bimetallic Ni-Pt catalysts supported on SiO 2

    NASA Astrophysics Data System (ADS)

    Arenas-Alatorre, J.; Avalos-Borja, M.; Díaz, G.

    2002-04-01

    A set of Pt, Ni and a bimetallic Ni50Pt50 catalysts supported on SiO2 of low and high surface area (S=50 and 200 m2/g) with a total metal loading of 2 wt.% was characterized by high-resolution electron microscopy (HREM), conventional transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and computational techniques such as digital processing and image simulation. Special attention was placed to the identification of intermetallic phases in the Ni50Pt50/SiO2 sample. Catalysts were prepared by impregnation and submitted to calcination-reduction activation treatments. For all the set, the increase in support's surface area led to an improvement of the metal dispersion. TEM and HREM images showed significant differences in the shape and crystalline lattice of the Pt and Ni particles in the monometallic samples taken as reference. While in Pt/SiO2 catalyst we identified only reduced Pt particles, in Ni/SiO2 some NiO particles were detected. HREM characterization of the Ni50Pt50 catalysts showed that many particles have defects such as twinning and dislocations. Cubo-octahedral shapes were predominant in the bimetallic catalyst. Crystal lattice and angles measurements were consistent with the identification of NiPt and/or Ni3Pt intermetallic phases. Superlattice structures were also identified and confirmed by image simulation. EDS analysis on a particle by particle basis confirmed that in bimetallic catalysts supported in SiO2 of low and high surface area, particles were present consisting of Ni-rich, nominal and Pt-rich metal compositions. Pt-only particles were found but no Ni-only particles were detected. Among the possibilities, NiPt and Ni3Pt compositions were identified.

  2. Synthesis and mechanism study of mesoporous SnO2/SiO2 composites.

    PubMed

    Zhu, Jie; Tay, B Y; Ma, Jan

    2006-07-01

    Mesoporous SnO2/SiO2 composite particles (Si/Sn < or = 0.25) sustainable to calcination up to 600 degrees C have been fabricated using a stepwise sol-gel technique on nonionic surfactant template (tetradecylamine, TDA). The newly designed preparation method involved the pre-formation of SnO2 sol solution from SnCl4. Subsequently, SnO2 nanocrystals were covered by the silicate species (from the hydrolysis of tetraethylorthosilicate, TEOS) in a pH controlled colloidal solution. Upon mixing with the surfactant solution, mesophase composite was obtained. After the removal of templates at various temperatures (400 to 600 degrees C), worm-like mesoporous SnO2/SiO2 with large specific surface area and pore volume as high as 362 m2/g and 0.33 cc/g were obtained, respectively. High thermal stability is mainly due to the effective inhibition of SnO2 crystal growth (mean crystallite size <30 A) by the amorphous SiO2 species at the grain boundaries. Formation of mesoporous silicate skeleton such as M41S family material was prevented. The obtained materials maintain the relatively narrow pore size distribution typically in the range of 30 to 70 A. Relations between material properties and key synthesis parameters (i.e. TDA/Si/Sn molar ratio and calcination temperature) were investigated by TGA, wide/small-angle X-ray scattering, (HR)TEM, BET, and FTIR techniques. Mechanisms on the mesostructure formation and crystal growth inhibition were also proposed with detailed discussion. PMID:17025123

  3. Synthesis and characterization of Fe2O3/SiO2 nanocomposites.

    PubMed

    Bogatyrev, V M; Gun'ko, V M; Galaburda, M V; Borysenko, M V; Pokrovskiy, V A; Oranska, O I; Polshin, E V; Korduban, O M; Leboda, R; Skubiszewska-Zieba, J

    2009-10-15

    Fe2O3/SiO2 nanocomposites based on fumed silica A-300 (S(BET)=337 m2/g) with iron oxide deposits at different content were synthesized using Fe(III) acetylacetonate (Fe(acac)3) dissolved in isopropyl alcohol or carbon tetrachloride for impregnation of the nanosilica powder at different amounts of Fe(acac)3 then oxidized in air at 400-900 degrees C. Samples with Fe(acac)3 adsorbed onto nanosilica and samples with Fe2O3/SiO2 including 6-17 wt% of Fe2O3 were investigated using XRD, XPS, TG/DTA, TPD MS, FTIR, AFM, nitrogen adsorption, Mössbauer spectroscopy, and quantum chemistry methods. The structural characteristics and phase composition of Fe2O3 deposits depend on reaction conditions, solvent type, content of grafted iron oxide, and post-reaction treatments. The iron oxide deposits on A-300 (impregnated by the Fe(acac)3 solution in isopropanol) treated at 500-600 degrees C include several phases characterized by different nanoparticle size distributions; however, in the case of impregnation of A-300 by the Fe(acac)3 solution in carbon tetrachloride only alpha-Fe2O3 phase is formed in addition to amorphous Fe2O3. The Fe2O3/SiO2 materials remain loose (similar to the A-300 matrix) at the bulk density of 0.12-0.15 g/cm3 and S(BET)=265-310 m2/g. PMID:19596124

  4. Effect of SiO2 on immobilization of metals and encapsulation of a glass network in slag.

    PubMed

    Kuo, Yi-Ming; Lin, Ta-Chang; Tsai, Perng-Jy

    2003-11-01

    The final disposal of ash from an incinerator is of special concern because of the possibility of its releasing toxic substances. Melting/vitrification has been regarded as a prospective technology of ash treatment. The object of this investigation was to evaluate the effect of silica (SiO2) addition on the immobilization of hazardous metals and the encapsulation of a glass network during the vitrification process. Four specimens with SiO2/fly ash mixing ratios of 0, 0.1, 0.2, and 0.3, respectively, were tested. The mobility of metals in slag was then estimated by a sequential extraction procedure. X-ray diffraction analysis indicates that SiO2 leads to the polymerization of silicates. The encapsulation of aluminum, calcium, and magnesium would not be observed unless adequate amount of SiO2 was added. It was also found that SiO2 addition enhances the formation of a compact and interconnected glass network structure and, thus, contributes to the chemical stability of metals in slag. After vitrification, the mobility of cadmium, copper, iron, chromium, nickel, lead, and zinc was significantly reduced. However, there is no significant correlation between the immobilization of these metals and the addition of SiO2. PMID:14649761

  5. Synthesis of Hollow Nanorods of SiO2 Anode Material by AAO Template Synthesis Method for Lithium Ion Battery.

    PubMed

    Yoo, Gi-Won; Kim, Cheong; Jang, Byeong-Chan; Yang, Su-Bin; Son, Jong-Tae

    2015-11-01

    Silicon oxide hollow nanorods (SiO2-HNs) were prepared via a two-step anodization of aluminum template. SiO2 was synthesized using tetraethyl orthosilicate (TEOS) as the Si source that has not been applied to the anodic aluminum oxide (AAO) template method. The SiO2-HNs obtained were characterized by X-ray diffraction, scanning electron microscopy and electrochemical test. The results show that SiO2 nanorods with hollow morphology were successfully formed by the AAO template. The SiO2-HNs were investigated as an anode material for lithium-ion batteries and delivered an initial reversible capacity of 1344.26 mA h g(-1) at a current density of 17 mAg(-1). To the best of our knowledge, this is the first report of the synthesis of SiO2-HN using TEOS as the Si source by a two-step anodization of AAO template. PMID:26726592

  6. Fine Structure in Swift Heavy Ion Tracks in Amorphous SiO2

    NASA Astrophysics Data System (ADS)

    Kluth, P.; Schnohr, C. S.; Pakarinen, O. H.; Djurabekova, F.; Sprouster, D. J.; Giulian, R.; Ridgway, M. C.; Byrne, A. P.; Trautmann, C.; Cookson, D. J.; Nordlund, K.; Toulemonde, M.

    2008-10-01

    We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounded by a high density shell. The structure is consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.

  7. FAST TRACK COMMUNICATION Heat transfer between graphene and amorphous SiO2

    NASA Astrophysics Data System (ADS)

    Persson, B. N. J.; Ueba, H.

    2010-11-01

    We study the heat transfer between graphene and amorphous SiO2. We include both the heat transfer from the area of real contact, and between the surfaces in the non-contact region. We consider the radiative heat transfer associated with the evanescent electromagnetic waves which exist outside of all bodies, and the heat transfer by the gas in the non-contact region. We find that the dominant contribution to the heat transfer results from the area of real contact, and the calculated value of the heat transfer coefficient is in good agreement with the value deduced from experimental data.

  8. Electrospun SiO2 "necklaces" on unglazed ceramic tiles: a planarizing strategy

    NASA Astrophysics Data System (ADS)

    Di Mauro, Alessandro; Fragalà, Maria Elena

    2015-05-01

    Silica based nanofibres have been deposited on unglazed ceramic tiles by combining electrospinning and sol-gel processes. Poly(vinyl pyrrolidone) (PVP) alcoholic solutions and commercial spin on glass (Accuglass) mixtures have been used to obtain composite fibrous non-woven mats totally converted, after thermal annealing at 600 °C, to SiO2 microsphere "necklaces". The possibility to get an uniform fibres coverage onto the tile surface confirms the validity of electrospinning (easily scalable to large surface samples) as coating strategy to cover the macroscopic defects typical of the polished unglazed tile surface and improve surface planarization.

  9. Modification of SiO2 nanowires with metallic nanocrystals from supercritical CO2.

    PubMed

    Ye, Xiang-Rong; Zhang, Hai-Feng; Lin, Yuehe; Wang, Lai-Sheng; Wai, Chien M

    2004-01-01

    Through hydrogen reduction of metal precursors in supercritical CO2, Cu, and Pd, nanocrystals were deposited onto SiO2 nanowires to form different types of nanostructured materials, including nanocrystal-nanowire, spherical aggregation-nanowire, shell-nanowire composites, and "mesoporous" metals supported by the framework of nanowires. This supercritical fluid deposition technique is an attractive approach for modifying nanowires because of its generality and simplicity; the modified nanowires could be useful as catalysts and for further fabrication of multifunctional composites. PMID:15112546

  10. Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

    NASA Technical Reports Server (NTRS)

    Turner, Tasha; Wu, Chi

    2003-01-01

    A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

  11. The reduction of SiO2 with carbon in a plasma

    NASA Technical Reports Server (NTRS)

    Coldwell, D. M.; Roques, R. A.

    1977-01-01

    The feasibility of a process for the reduction of low impurity silica (SiO2) with carbon in a plasma heat source was investigated. An RF induction plasma reactor was fabricated and used to optimize process variables. Maximum silicon content of the product was 33% by weight. Emission spectrographic analysis of this product showed a reduction in some impurity levels of one to two orders of magnitude. While the plasma approach proved technically feasible, poor heat transfer from the plasma to the reactant and low yield make the process economically unattractive for large-scale use.

  12. Doped SiO2 telecommunication fibre as a 1-D detector for radiation therapy dosimetry

    NASA Astrophysics Data System (ADS)

    Abdul Rahman, A. T.; Abdul Sani, Siti Fairus; Bradley, D. A.

    2012-02-01

    Present studies concern Ge-doped SiO2 telecommunication fibre as a high spatial resolution 1-D thermoluminescence (TL) system for radiotherapeutic dosimetry. Using tube xray bremsstrahlung sources operating at kilovoltage energies, these fibres have been shown to offer linear response, from < 1Gy up to in excess of 30 Gy. Measurement of the photoelectron dose enhancement resulting from use of a moderately high atomic number medium (iodinated contrast media) demonstrates the fibres to have the local dose sensitivity required of interface dosimetry. In PMMA, the TL yield is ~60% greater in the presence of iodine than in its absence.

  13. Ion-implantation effect on time-dependent breakdown in SiO2

    NASA Technical Reports Server (NTRS)

    Li, S. P.

    1975-01-01

    It was experimentally demonstrated that the field emission of positive ions from the metal SiO2 interface in MOS structures can be controlled by introducing a positive charge in a small ion-implantation dose to a shallow depth below the metal electrode. Considerable improvement of time-dependent breakdown was noted in structures implanted in this manner as opposed to nonimplanted ones. This experiment confirms the model proposed by Li and Maserjian (1975) for radiation effect on time-dependent breakdown.

  14. Radiation stability of SiO2 micro- and nanopowders under electron and proton exposure

    NASA Astrophysics Data System (ADS)

    Li, Chundong; Mikhailov, M. M.; Neshchimenko, V. V.

    2014-01-01

    The effects of proton and electron (E = 100 keV, F = 5 × 1015 сm-2) exposure on the reflective spectra of SiO2 micro- and nanopowders in wavelength range from 250 to 2500 nm have been investigated. It has been established that the reflectance and radiation stability of nanopowders is less than that of micropowders. This effect is caused by the high concentration of radiation defects, which act as surface absorption centers (Es‧ centers) near the energies 5.47 and 4.45 eV, and peroxide silicon defects (tbnd Sisbnd Osbnd Osbnd Sitbnd) near the energy 3.84 eV.

  15. The Obtaining of Nano Oxide Systems SiO2-REE with Alkoxide Technology

    NASA Astrophysics Data System (ADS)

    Amelina, Anna; Grinberg, Evgenii

    A lot of oxides systems with REE as dopants are used in catalytic processes in organic synthesis. They are very perspectives as thermostable coating in aerospace technics. These systems are usually based on silicon or aluminium oxides and doped with rare-earth elements. This systems can be produced by different methods. One of the most perspective of them is “sol-gel”-method with silicium, aluminium and rare-earth alkoxides as a precursor of doped silica and alumina, or their derivatives. Thus the obtaining of composite SiO _{2} - REE oxide materials by the hydrolysis doped with rare-earth elements was suggested. Some of alcoholate derivatives such as El(OR)n were used in this processes. The SiO _{2}- REE oxides were precipitated during the sol-gel process, where tetraethoxysilane (TEOS) as used as SiO _{2} sources. Also it is known that alkoxides of alkali metals, including lithium alkoxides, are widely used in industry and synthetic chemistry, as well as a source of lithium in various mixed oxide compositions, such as lithium niobate, lithium tantalate or lithium silicate. Therefore, we attempted to obtain the lithium silicate, which is also doped with rare-earth elements. Lithium silicate was obtained by alkaline hydrolysis of tetraethoxysilane with lithium alkoxide. Lithium alkoxide were synthesized by dissolving at metal in the corresponding alcohol are examined. The dependence of the rate of dissolving of the metal on the method of mixing of the reaction mixture and the degree of metal dispersion was investigated. The mathematical model of the process was composed and also optimization of process was carried out. Some oxide SiO _{2}, Al _{2}O _{3} and rare-earth nanostructured systems were obtained by sol-gel-method. The size of particle was determined by electron and X-ray spectroscopy and was in the range of 5 - 15 nm. Purity of this oxide examples for contaminating of heavy metals consists n.(1E-4...1E-5) wt%. Sols obtained by this method may be used for producing of thin coats on ceramics and metallic surfaces.

  16. Visible Absorption Properties of Retinoic Acid Controlled on Hydrogenated Amorphous Silicon Thin Film

    NASA Astrophysics Data System (ADS)

    Tsujiuchi, Yutaka; Masumoto, Hiroshi; Goto, Takashi

    2008-02-01

    Langmuir-Blodgett (LB) films of retinoic acid and LB films of retinoic acid mixed with a peptide that contains an alanine-lysine-valine (AKV) amino acid sequence deposited on a hydrogenated amorphous silicon (a-Si:H) film prepared by electron cyclotron resonance (ECR) plasma sputtering were fabricated, and their light absorption spectrums were compared. A specific visible light absorption at approximately 500 nm occurred in a film that had a film thickness of more than 80 nm and a hydrogen concentration of more than 20% in the sputtering process gas. Mixing the AKV sequence peptide with retinoic acid caused a 6 nm blueshift, from 363 to 357 nm, of the absorption maximum of the composite LB film on a SiO2 substrate. Using the same peptide, a large 30 nm blueshift, from 500 to 470 nm, was induced in the composite LB film on the a-Si:H film.

  17. Analysis of Rayleigh-Mode Spurious Response Using Finite Element Method/Spectrum Domain Analysis for Surface Acoustic Wave Resonator on Nonflat SiO2/Al/LiNbO3 Structure

    NASA Astrophysics Data System (ADS)

    Nakamura, Hiroyuki; Nakanishi, Hidekazu; Goto, Rei; Hashimoto, Ken-ya; Yamaguchi, Masatsune

    2010-07-01

    Because of their low insertion loss, high out-of-band rejection, and high power durability, miniature surface acoustic wave (SAW) duplexers are widely used in mobile phones. Substrate materials substantially limit and determine the performance of SAW duplexers; for their applications to Band I and Band IV systems with large pass-band widths and wide frequency separations between the transmitting and receiving frequency bands, a larger coupling coefficient (K2) is of primary importance. We have developed a shape-controlled SiO2 film/Al electrode/LiNbO3 substrate structure for their applications. It could lead to a large K2 and suppression of Rayleigh-mode spurious response. In this paper, we report the analysis using finite element method/spectrum domain analysis (FEM/SDA) for the SAW resonator on a nonflat SiO2 film/Al electrode/LiNbO3 structure. It was clarified that the shape-controlled SiO2 was effective in terms of achieving a large K2 for the SAW resonator with suppressed Rayleigh-mode spurious responses and bulk wave radiation. Furthermore, the experiment results showed a good agreement with the analysis results.

  18. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young

    2016-08-01

    A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 °C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 mΩ cm2, and a breakdown voltage of 810 V.

  19. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

    NASA Astrophysics Data System (ADS)

    Wang, Yucheng; Jia, Renxu; Zhao, Yanli; Li, Chengzhan; Zhang, Yuming

    2016-07-01

    In this study, the material and electrical properties of La2O3/SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are systematically characterized. Thermal oxidization SiO2 with varying thickness (0 nm, 3.36 nm, 5 nm, 8 nm, and 30 nm) were coated with La2O3 using atomic layer deposition on n-type 4H-SiC. The stacking oxides were measured using atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, and the MOS capacitors were measured by capacitance-voltage and current-voltage measurements. The results demonstrate that the main gate current leakage mechanisms are dependent on the thickness of the SiO2 oxide under the applied electric field. The primary mechanism for current leakage from the La2O3/4H-SiC MOS capacitor follows the Schottky emission mechanism due to its low conduction band offset. In contrast, the current leakage mechanism for the capacitor with a 3.36 nm SiO2 layer follows the Poole-Frenkel emission mechanism on account of its high trap charge density in the gate dielectric and at the interface. When the thickness of the SiO2 layer increases to 8 nm, lower leakage current is observed by reason of the low trap charge density and high conduction band offset when E ≤ 5 MV/cm. As the electric field strength increases to 5 MV/cm and 5.88 MV/cm (30 nm SiO2: 4.8 MV/cm), the main current leakage mechanism changes to the Fowler-Nordheim tunneling mechanism, which indicates that the La2O3/SiO2 stacking structure can improve the properties of MOS capacitors.

  20. Formation Mechanism of SiO2-Type Inclusions in Si-Mn-Killed Steel Wires Containing Limited Aluminum Content

    NASA Astrophysics Data System (ADS)

    Wang, Kunpeng; Jiang, Min; Wang, Xinhua; Wang, Ying; Zhao, Haoqian; Cao, Zhanmin

    2015-10-01

    The origin, formation mechanism, and evolution of SiO2-type inclusions in Si-Mn-killed steel wires were studied by pilot trials with systematical samplings at the refining ladle, casting tundish, as-cast bloom, reheated bloom, and hot-rolled rods. It was found that the inclusions in tundish were well controlled in the low melting point region. By contrast, MnO-SiO2-Al2O3 inclusions in the as-cast bloom were with compositions located in the primary region of SiO2, and most CaO-SiO2-Al2O3-MnO inclusions lied in primary phase region of anorthite. Therefore, precipitation of SiO2 particles in MnO-SiO2-Al2O3 inclusions can be easier than in CaO-SiO2-Al2O3-MnO inclusions to form dual-phase inclusions in the as-cast bloom. Thermodynamic calculation by the software FactSage 6.4 (CRCT-ThermFact Inc., Montréal, Canada) showed that mass transfer between liquid steel and inclusions resulted in the rise of SiO2 content in inclusions from tundish to as-cast bloom and accelerated the precipitation of pure SiO2 phase in the formed MnO-SiO2-Al2O3 inclusions. As a result, the inclusions characterized by dual-phase structure of pure SiO2 in MnO-SiO2-Al2O3 matrix were observed in both as-cast and reheated blooms. Moreover, the ratio of such dual-phase SiO2-type inclusions witnessed an obvious increase from 0 to 25.4 pct before and after casting, whereas it changed little during the reheating and rolling. Therefore, it can be reasonably concluded that they were mainly formed during casting. Comparing the evolution of the inclusions composition and morphology in as-cast bloom and rolled products, a formation mechanism of the SiO2-type inclusions in wire rods was proposed, which included (1) precipitation of SiO2 in the formed MnO-SiO2-Al2O3 inclusion during casting and (2) solid-phase separation of the undeformed SiO2 precipitation from its softer MnO-SiO2-Al2O3 matrix during multipass rolling.

  1. Strain-induced properties of epitaxial VOx thin films

    NASA Astrophysics Data System (ADS)

    Rata, A. D.; Hibma, T.

    2005-01-01

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films grown under tensile strain on MgO substrates. A clear crossover from metallic to semiconducting behavior is observed when increasing the oxygen content x. Apparently, the application of strain induces a Mott-Hubbard insulator-to-metal transition in VOx<1. The VOx/SrTiO3 films show an unexpected large positive magnetoresistance effect at low temperatures, which is not found in the VOx films grown under tensile strain on MgO or on a substrate with a similar lattice parameter.

  2. Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

    NASA Astrophysics Data System (ADS)

    Domanowska, A.; Miczek, M.; Ucka, R.; Matys, M.; Adamowicz, B.; Żywicki, J.; Taube, A.; Korwin-Mikke, K.; Gierałtowska, S.; Sochacki, M.

    2012-08-01

    The electronic and chemical properties of the interface region in the structures obtained by the passivation of epitaxial n-type 4H-SiC layers with bilayers consisting of a 5 nm-thick SiO2 or Al2O3 buffer film and high-κ HfO2 layer were investigated. The main aim was to estimate the influence of the passivation approach on the interface effective charge density (Qeff) from the surface photovoltage (SPV) method and, in addition to determine the in-depth element distribution in the interface region from the Auger electron spectroscopy (AES) combined with Ar+ ion profiling. The structure HfO2/SiO2/4H-SiC exhibited slightly superior electronic properties in terms of Qeff (in the range of -1011 q cm-2).

  3. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  4. The effects of surface polarity and dangling bonds on the electronic properties of MoS2 on SiO2

    NASA Astrophysics Data System (ADS)

    Sung, Ha-Jun; Choe, Duk-Hyun; Chang, Kee Joo

    2015-03-01

    MoS2 has recently attracted much attention due to its intriguing physical phenomena and possible applications for the next generation electronic devices. In pristine monolayer MoS2, strong spin-orbit coupling and inversion symmetry breaking allow for an effective coupling between the spin and valley degrees of freedom, inducing valley polarization at the K valleys. However, the spin-valley coupling disappears in bilayer MoS2 because the inversion symmetry is restored. In this work, we investigate the effects of surface polarity and dangling bonds on the electronic properties of MoS2 on α-quartz SiO2 through first-principles calculations. In monolayer MoS2, a transition can take place from the direct-gap to indirect-gap semiconductor in the presence of O dangling bonds. In bilayer MoS2, O dangling bonds induce dipole fields across the interface and thus break the inversion symmetry, resulting in the valley polarization, similar to that of pristine monolayer MoS2. Based on the results, we discuss the origin of the valley polarization observed in MoS2 deposited on SiO2 This work was supported by National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and by Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

  5. Disorder and cluster formation during ion irradiation of Au nanoparticles in SiO2

    NASA Astrophysics Data System (ADS)

    Kluth, P.; Johannessen, B.; Foran, G. J.; Cookson, D. J.; Kluth, S. M.; Ridgway, M. C.

    2006-07-01

    Au nanoparticles (NPs) have been formed by ion beam synthesis in 600nm thin SiO2 . Subsequently the NPs were irradiated with 2.3MeV Sn ions at liquid nitrogen temperature. Samples were analyzed using extended x-ray absorption fine structure (EXAFS) spectroscopy and small angle x-ray scattering (SAXS) as a function of Sn irradiation dose. Transmission electron microscopy shows that the NPs largely retain their spherical shape upon irradiation. However, we observe a reduction in average NP size and a concomitant significant narrowing of the size distribution with increasing irradiation dose as consistent with inverse Ostwald ripening. At lower irradiation doses, significant structural disorder is apparent with an effective bond length expansion as consistent with amorphous material. At higher irradiation doses, EXAFS measurements indicate dissolution of a significant fraction of Au from the NPs into the SiO2 matrix (as monomers) and the formation of small Au clusters (dimers, trimers, etc.). We estimate the volume fraction of such monomers/clusters. Ion irradiation thus yields disordering then dissolution of Au NPs.

  6. Crack-resistant Al2O3-SiO2 glasses.

    PubMed

    Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining "hard" and "crack-resistant" glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3-(100-x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3-SiO2 glasses. In particular, the composition of 60Al2O3 • 40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  7. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    NASA Astrophysics Data System (ADS)

    Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  8. Synthesis of Nanosize Silicon Carbide Powder by Carbothermal Reduction of SiO2

    NASA Astrophysics Data System (ADS)

    Dehghanzadeh, M.; Ataie, A.; Heshmati-Manesh, S.

    A mixture of silicon carbide nano-particles and nano-whiskers has been synthesized through solid state reduction of silica by graphite employing high energy planetary ball milling for 25 h and subsequent heat treatment at 1300-1700°C in dynamic argon atmosphere. Effects of process conditions on the thermal behavior, phase composition and morphology of the samples were investigated using DTA/TGA, XRD and SEM, technique, respectively. DTA/TGA analysis shows that silicon carbide starts to form at 1250°C. Analysis of the XRD patterns indicates that the phase composition of the sample heat treated at 1300°C for 2 h mainly consists of SiO2 together with small amount of β-SiC. Nano-crystalline silicon carbide phase with a mean crystallite size of 38 nm was found to be dominate phase on heat treatment temperature at 1500°C. Substantial SiO2 was still remained in the above sample. SEM studies reveal that the sample heat treated at 1500°C for 2 h contains nano-particles and nano-whisker of β-SiC with a mean diameter of almost 85 nm. The results obtained were also showed that the characteristics of the synthesized SiC particles strongly depend on the mechanical activation and heat treatment conditions.

  9. Study of the thermal treatment of SiO2 aggregate

    NASA Astrophysics Data System (ADS)

    Tahiri, N.; Khouchaf, L.; Elaatmani, M.; Louarn, G.; Zegzouti, A.; Daoud, M.

    2014-08-01

    Crystalline quality and the silanoles defects (Si-OH) present within the structure of natural SiO2 play an important role in its reactivity. In this work, the relationship between the loss of silanoles and the crystallinity improvement upon heating between 450 °C and 650 °C was shown using X-Ray Diffraction (XRD) and Fourier Transform mid Infrared Spectroscopy in Attenuated Total Reflection (ATR). A shift of the principal band Si-O-Si from 1078 cm-1 to 1082 cm-1 and the decrease of the intensity of the Si-OH bands at 555cm-1and at 950cm-1 upon heating between 450 °C and 650 °C were shown. The reduction of the band is correlated to the loss of silanoles. In agreement with FT-IR results, the decrease of the FWHM of the XRD peaks shows that the crystalline quality is improved upon heating. This result leads to a decrease of the reactivity of SiO2 aggregate under chemical attacks.

  10. Early SiO 2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters

    NASA Astrophysics Data System (ADS)

    Torres, V. J. B.; Coutinho, J.; Jones, R.; Barroso, M.; Öberg, S.; Briddon, P. R.

    2006-04-01

    Oxygen precipitation in Si strongly depends on the undergoing thermal treatment. Between 350 and 450 °C thermal donor formation is activated by a 1.4-1.6 eV barrier. On the other hand, at T>500C, SiO 2 cluster formation is limited by the interstitial oxygen (Oi) migration barrier of ∼2.5 eV. Volumetric arguments imply that the formation of silica precipitates during anneals of oxygen-rich Si crystals, must be accompanied by the ejection of approximately one Si self-interstitial (Sii) per SiO 2 unit that is formed. We report on ab-initio density-functional studies of small oxygen aggregates in Si, to show that the On→VOn+Sii reaction is exothermic for n⩾4. The large energy barrier required to form an intermediate Sii defect prevents the formation of VOn complexes at temperatures as low as 450 °C. Our results imply that thermal donors are not thermodynamically stable clusters, and their formation is driven by kinetics. Infra-red absorption studies can discriminate VOn and On defects. We report their local vibrational modes and compare them with the available experimental data.

  11. The effect of SiO2 content on activation volumes in exchange coupled composite media

    NASA Astrophysics Data System (ADS)

    Chureemart, J.; Lari, L.; Nolan, T. P.; O'Grady, K.

    2013-08-01

    The activation volume, Vact, and the physical grain volume, VTEM, have been investigated on identical structures of exchange coupled composite media with three different contents of silicon dioxide (SiO2) utilised for intergranular exchange decoupling. Time dependence measurements known as the waiting time method have been used to determine Vact. Transmission Electron Microscopy analysis has been carried out to investigate the grain size distribution and the composition distribution at the grain boundaries using bright field high resolution-scanning transmission electron microscopy (BF HR-STEM) and high angle annular dark-field (HAADF) modes. We found that Vact and VTEM decrease as the oxide content is increased. The activation volume and the single grain volume are in excellent agreement for the samples with the highest oxide content indicating complete exchange decoupling. The BF HR-STEM and HAADF STEM images indicate excellent SiO2 segregation at the grain boundaries. This result implies that the activation volume in advanced recording media can be estimated via the correlation to the grain size.

  12. Photon Irradiation Response on Ge and Al-Doped SiO2 Optical Fibres

    NASA Astrophysics Data System (ADS)

    Yaakob, Nor Haliza; Wagiran, Husin; Ramli, Ahmad Termizi; Ali, Hassan; Asni, Hazila

    2010-07-01

    Recently, research groups have reported a number of radiation effects on the applications of SiO2 optical fibres with possible use as dosimeter material because these optical fibre provide a good basis for medical radiation dosimetry. The objective of this study is to investigate the thermoluminescence response and fading characteristic for germanium and aluminium doped SiO2 optical fibres with photon irradiation. These optical fibres are placed in solid phantom and irradiated to 6 and 10 MV photon beam at dose ranging from 0.06 Gy to 0.24 Gy using Primus MLC 3339 linear accelerator at Hospital Sultan Ismail, Johor Bahru. In fading studies, the TL measurements were continued up to 14 days period. The optical fibres will produce glow curves whereby the information is then analyzed. Al and Ge-doped optical fibres have a linear dose-TL signal relationship that is proportionality between the TL signal and the doses. Comparison for TL response between different linear accelerator showed a good agreement because these optical fibres also have a linear dose-TL signal relationship even using different equipments.

  13. Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices

    PubMed Central

    El-Sayed, Al-Moatasem; Gös, Wolfgang; Grasser, Tibor; Shluger, Alexander L.

    2016-01-01

    Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into their characteristics. In particular, these experimental data show a repeated dis- and reappearance (the so-called volatility) of the defect-related signals. We use multiscale modelling to explain the charge capture and emission as well as defect volatility in amorphous SiO2 gate dielectrics. We first briefly discuss the recent experimental results and use a multiphonon charge capture model to describe the charge-trapping behaviour of defects in silicon-based MOSFETs. We then link this model to ab initio calculations that investigate the three most promising defect candidates. Statistical distributions of defect characteristics obtained from ab initio calculations in amorphous SiO2 are compared with the experimentally measured statistical properties of charge traps. This allows us to suggest an atomistic mechanism to explain the experimentally observed volatile behaviour of defects. We conclude that the hydroxyl-E′ centre is a promising candidate to explain all the observed features, including defect volatility. PMID:27436969

  14. Ultrahydrous stishovite from high-pressure hydrothermal treatment of SiO2.

    PubMed

    Spektor, Kristina; Nylen, Johanna; Stoyanov, Emil; Navrotsky, Alexandra; Hervig, Richard L; Leinenweber, Kurt; Holland, Gregory P; Häussermann, Ulrich

    2011-12-27

    Stishovite (SiO(2) with the rutile structure and octahedrally coordinated silicon) is an important high-pressure mineral. It has previously been considered to be essentially anhydrous. In this study, hydrothermal treatment of silica glass and coesite at 350-550 °C near 10 GPa produces stishovite with significant amounts of H(2)O in its structure. A combination of methodologies (X-ray diffraction, thermal analysis, oxide melt solution calorimetry, secondary ion mass spectrometry, infrared and nuclear magnetic resonance spectroscopy) indicate the presence of 1.3 ± 0.2 wt % H(2)O and NMR suggests that the primary mechanism for the H(2)O uptake is a direct hydrogarnet-like substitution of 4H(+) for Si(4+), with the protons clustered as hydroxyls around a silicon vacancy. This substitution is accompanied by a substantial volume decrease for the system (SiO(2) + H(2)O), although the stishovite expands slightly, and it is only slightly unfavorable in energy. Stishovite could thus be a host for H(2)O at convergent plate boundaries, and in other relatively cool high-pressure environments. PMID:22160677

  15. Experimental study on the coalescence process of SiO2 supported colloidal Au nanoparticles

    NASA Astrophysics Data System (ADS)

    Ruffino, F.; Torrisi, V.; Grimaldi, M. G.

    2015-11-01

    We report on an experimental study of the coalescence-driven grow process of colloidal Au nanoparticles on SiO2 surface. Nanoparticles with 30, 50, 80, 100 nm nominal diameters on a SiO2 substrate were deposited, from solutions, by the drop-casting method. Then, annealing processes, in the 573-1173 K temperature range and 900-3600 s time range, were performed. Using scanning electron microscopy analyses, the temporal evolution of the nanoparticles sizes has been studied. In particular, for all classes of nanoparticles, the experimental-obtained diameters distributions evidenced double-peak shapes (i. e. bimodal distributions): a first peak centered (and unchanged changing the annealing temperature and/or time) at the nominal diameter of the as-deposited nanoparticles, , and a second peak shifting at higher mean diameters, , increasing the annealing temperature and/or time. This observation suggested us a coalescence-driven growth process of a nanoparticles sub-population. As a consequence, the temporal evolution of (for each class of nanoparticles and each annealing temperature), within the well-established particles coalescence theoretical framework, has been analyzed. In particular, by the analyses of the experimental data using relations as prescribed by the theoretical model, a characteristic size-dependent activation energy for the Au nanoparticles coalescence process has been evaluated.

  16. Heat flux induced dryout and rewet in thin films

    NASA Technical Reports Server (NTRS)

    Stroes, Gustave; Fricker, Darren; Issacci, Farrokh; Catton, Ivan

    1990-01-01

    Heat flux induced dryout of thin liquid films on an inclined copper plate was studied. Rewet of the dried out area is also considered. The four fluids used to form the thin films exhibited very different dryout and rewet characteristics. The contact angle and hysteresis effects were found to be important, but they must be considered in context with other parameters. No single variable was found to independently determine the pattern of dryout and rewet.

  17. Fabrication and optical testing of hybrid SiO2: azo-polymer based planar waveguides for NLO/SHG laser emission

    NASA Astrophysics Data System (ADS)

    Torres-Zúñiga, V.; Morales-Saavedra, O. G.; Pérez-Martínez, A. L.

    2015-01-01

    Predesigned push-pull azo-dye polymers were homogeneously dispersed within a SiO2 sol-gel matrix synthesized via the sonogel (SG) route. High-quality spin-coated films were obtained with these hybrid structures in the liquid sol-phase. The spectroscopic UV- Vis analyses reveal the appropriate insertion of these organic compounds within the highly pure SG-environment whereas the thermal (DSC) analysis and photoacoustic measurements evidence the thermomechanical stability of the amorphous hybrid layers. As the optical attenuation, refractive index and film thickness values of the obtained films are adequate for opto-electronic applications; these hybrid films were implemented to fabricate optical waveguiding prototypes. In this sense, functional planar waveguides were fabricated for nonlinear optical (NLO) applications after performing a molecular ordering via a corona DC-poling procedure in order to achieve a macroscopic polar order (ferroelectric and noncentrosymmetric arrangement of the organic chromophores). The poled films were then able to exhibit stable NLO-waveguiding effects as excited with a Nd:YAG laser system in order to generate second harmonic waves travelling within the planar layer.

  18. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    PubMed

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C. PMID:25971093

  19. Solidification and recycling of incinerator bottom ash through the addition of colloidal silica (SiO2) solution.

    PubMed

    Park, Jong Soo; Park, Young Jun; Heo, Jong

    2007-01-01

    The possibility of using incinerator bottom ash as a substitute for natural aggregates was investigated. Rough, porous surface of bottom ash, which diminishes the strength of solidified products, was improved by colloidal silica solution. As a result, a significant increase of mechanical strength was accomplished by a slight amount of silica (<1 wt% to total). Moreover, pozzolanic reaction was induced in initial cement hydration due to the nano-particle size of about 20 nm in colloidal silica solution. Cylindrical specimens and bricks were prepared from bottom ash added to a colloidal silica (SiO2) solution and cement, and then their compressive strengths were evaluated. Cylindrical specimens showed an increase of approximately 60% in compressive strength when colloidal solution containing 4 wt% silica particles was sprayed onto the bottom ash. The strength of bricks containing colloidal silica was in excess of 20 MPa, which meets the requirement of construction materials. Results of leaching tests based on Toxicity Characteristic Leaching Procedure (TCLP) proved that the solidified bottom ash possessed good chemical stability. PMID:17081741

  20. Heterogeneous Nucleation of n-Butanol Vapor on Submicrometer Particles of SiO2 and TiO2.

    PubMed

    Chen; Huang; Tao

    1999-03-15

    Condensation of a supersaturated vapor of n-butanol on monodisperse submicrometer particles is investigated in a flow cloud chamber (FCC). The size dependence of critical supersaturation in the range of 20 to 90 nm is experimentally determined. Two types of aerosol, SiO2 and TiO2, are tested. The results show that both aerosols induce heterogeneous nucleation better than perfectly wetted particles. The experimental critical supersaturation is smaller than that predicted by the Fletcher version of Volmer theory of heterogeneous nucleation even with the line tension and surface diffusion taken into account and has a size dependence in qualitative agreement with that theoretically predicted but to a lesser degree. The discrepancy can not be fully accounted for by the effects of line tension and surface diffusion and the existing theory concerning the curvature-dependent physical properties. The law of corresponding states was extended to the heterogeneous nucleation, and a simple correlation was observed. We conclude that the macroscopic theory of heterogeneous nucleation leads to a prediction of critical supersaturation higher than that experimentally measured. Copyright 1999 Academic Press. PMID:10049535

  1. Robust SiO2-modified CoFe2O4 hollow nanofibers with flexible room temperature magnetic performance.

    PubMed

    Jing, Panpan; Pan, Lining; Du, Jinlu; Wang, Jianbo; Liu, Qingfang

    2015-05-21

    A range of robust SiO2-modified CoFe2O4 hollow nanofibers with high uniformity and productivity were successfully prepared via polyvinylpyrrolidone-sol assisted electrospinning followed by annealing at a high temperature of 1000 °C, and they were characterized using scanning electron microscopy, transmission electron microscopy, vibrating sample magnetometry, X-ray diffraction and X-ray photoelectron spectroscopy in detail. It was demonstrated that amorphous SiO2 has a significant influence on not only the surface morphology, microstructure and crystalline size but also the room temperature magnetic performance of the inverse spinel CoFe2O4 nanofibers. The pure CoFe2O4 sample shows a particle chain rod-shape appearance but the SiO2-modified CoFe2O4 sample shows a robust hollow fibrous structure. With increasing SiO2 content, an increase at first and then a decrease in coercivity (Hc) and monotonously a decrease in saturation magnetization (Ms) have been determined in the obtained modified CoFe2O4 hollow nanofibers. A maximum Ms of about 80 emu g(-1) and a maximum Hc of about 1477 Oe could be, respectively, acquired from the pure CoFe2O4 nanorods and the modified CoFe2O4 hollow nanofibers with about 14.9% SiO2. The changes in Ms, Hc and the structure evolution mechanism of these SiO2-modified CoFe2O4 hollow nanofibers have been elaborated systematically. Furthermore, it is suggested that amorphous SiO2 enables effectively improving the structure endurance of 1D electrospun inorganic oxide hollow nanostructures being subjected to high temperatures. PMID:25907405

  2. Effect of a SiO2 coating on the magnetic properties of Fe3O4 nanoparticles.

    PubMed

    Larumbe, S; Gómez-Polo, C; Pérez-Landazábal, J I; Pastor, J M

    2012-07-01

    In this work the effect of a SiO2 coating on the magnetic properties of Fe3O4 nanoparticles obtained by the sol-gel method is analyzed. Two sets of samples were prepared: Fe3O4 nanoparticles and Fe3O4@SiO2 core-shell composites. The samples display the characteristic spinel structure associated with the magnetite Fe3O4 phase, with the majority of grain sizes around 5-10 nm. At room temperature the nanoparticles show the characteristic superparamagnetic behavior with mean blocking temperatures around 160 and 120 K for Fe3O4 and Fe3O4@SiO2, respectively. The main effect of the SiO2 coating is reflected in the temperature dependence of the high field magnetization (μ(0)H = 6 T), i.e. deviations from the Bloch law at low temperatures (T < 20 K). Such deviations, enhanced by the introduction of the SiO2 coating, are associated with the occurrence of surface spin disordered effects. The induction heating effects (magnetic hyperthermia) are analyzed under the application of an AC magnetic field. Maximum specific absorption rate (SAR) values around 1.5 W g(-1) were achieved for the Fe3O4 nanoparticles. A significant decrease (around 26%) is found in the SAR values of the SiO2 coated nanocomposite. The different heating response is analyzed in terms of the decrease of the effective nanoparticle magnetization in the Fe3O4@SiO2 core-shell composites at room temperature. PMID:22700683

  3. Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric

    NASA Astrophysics Data System (ADS)

    Chang, T. H.; Chiu, C. J.; Chang, S. J.; Tsai, T. Y.; Yang, T. H.; Huang, Z. D.; Weng, W. Y.

    2013-06-01

    This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.

  4. Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures

    NASA Astrophysics Data System (ADS)

    Hwang, Jisoo; Kim, Min Jung; Wu, J. W.; Mook Lee, Seung; Rhee, Bum Ku

    2006-02-01

    A picosecond pump-probe nonlinear optical measurement is performed in SiO2/TiO2 one-dimensional photonic bandgap structures fabricated by a solgel method. Both high and low band edges were examined by varying the probe wavelengths and angle tuning was also employed to further clarify the mechanism of a nonlinear optical response. The third-order nonlinear optical response in one-dimensional photonic bandgap structures that comprise TiO2 films is responsible for the nonlinear optical transmissions at both bandgap edges, with an 8% decrease at the low-energy edge and a 4.5% increase at the high-energy edge for a 355 nm pump intensity of 430 MW/cm2.

  5. Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures.

    PubMed

    Hwang, Jisoo; Kim, Min Jung; Wu, J W; Lee, Seung Mook; Rhee, Bum Ku

    2006-02-01

    A picosecond pump-probe nonlinear optical measurement is performed in SiO2/TiO2 one-dimensional photonic bandgap structures fabricated by a solgel method. Both high and low band edges were examined by varying the probe wavelengths and angle tuning was also employed to further clarify the mechanism of a nonlinear optical response. The third-order nonlinear optical response in one-dimensional photonic bandgap structures that comprise TiO2 films is responsible for the nonlinear optical transmissions at both bandgap edges, with an 8% decrease at the low-energy edge and a 4.5% increase at the high-energy edge for a 355 nm pump intensity of 430 MW/cm2. PMID:16480214

  6. Process for Smoothing an Si Substrate after Etching of SiO2

    NASA Technical Reports Server (NTRS)

    Turner, Tasha; Wu, Chi

    2003-01-01

    A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

  7. Effect of Oxidation and SiO2 Coating on the Bonding Strength of Ti-Porcelain

    NASA Astrophysics Data System (ADS)

    Guo, Litong; Liu, Xiaochen; Zhu, Yabo; Xu, Cheng; Gao, Jiqiang; Guo, Tianwen

    2010-11-01

    Investigations on the effect of oxidation on titanium-ceramic adhesion were performed. Cast pure titanium was subjected to surface modification by preoxidation and introduction of an intermediate layer of SiO2 by sol-gel process. Specimens were characterized by TG-DSC, XRD, and SEM/EDS. The adhesion between the titanium and porcelain was evaluated by three-point flexure bond test. Failure of the titanium-porcelain with preoxidation treatment predominantly occurred at the titanium-oxide interface. Preoxidation treatment did not affect the fracture mode of the titanium-ceramic system and did not increase the bonding strength of Ti-porcelain. The SEM results revealed the existence of microcracks on the SiO2 coating surface oxidized at 800 °C in an air furnace. During the porcelain fusion, minute amounts of oxygen were able to penetrate the cracks and caused localized oxidation of the Ti-substrate. Failure of the titanium-porcelain with SiO2 coating predominantly occurred at the SiO2 layer. The SiO2 coating served as an effective oxygen diffusion barrier and improved the mechanical and chemical bonding between porcelain and titanium.

  8. Interface-enhanced Li ion conduction in a LiBH4-SiO2 solid electrolyte.

    PubMed

    Choi, Yong Seok; Lee, Young-Su; Oh, Kyu Hwan; Cho, Young Whan

    2016-08-10

    We have developed a fast solid state Li ion conductor composed of LiBH4 and SiO2 by means of interface engineering. A composite of LiBH4-SiO2 was simply synthesized by high energy ball-milling, and two types of SiO2 (MCM-41 and fumed silica) having different specific surface areas were used to evaluate the effect of the LiBH4/SiO2 interface on the ionic conductivity enhancement. The ionic conductivity of the ball-milled LiBH4-MCM-41 and LiBH4-fumed silica mixture is as high as 10(-5) S cm(-1) and 10(-4) S cm(-1) at room temperature, respectively. In particular, the conductivity of the latter is comparable to the LiBH4 melt-infiltrated into MCM-41. The conductivities of the LiBH4-fumed silica mixtures at different mixing ratios were analyzed employing a continuum percolation model, and the conductivity of the LiBH4/SiO2 interface layer is estimated to be 10(5) times higher than that of pure bulk LiBH4. The result highlights the importance of the interface and indicates that significant enhancement in ionic conductivity can be achieved via interface engineering. PMID:27468702

  9. Magnetic properties of iron-based soft magnetic composites with SiO2 coating obtained by reverse microemulsion method

    NASA Astrophysics Data System (ADS)

    Wu, Shen; Sun, Aizhi; Lu, Zhenwen; Cheng, Chuan; Gao, Xuexu

    2015-05-01

    In this work, iron-based soft magnetic composites coated with the amorphous SiO2 layer have been fabricated by utilizing tetraethoxysilane in the reverse microemulsion method, and then the effects of addition amount of SiO2 and annealing temperature on the magnetic properties were investigated. The results show that the surface of iron powders contains a thin amorphous SiO2 insulation layer, which effectively decreases the magnetic loss of synthesized magnets. The magnetic loss of coated samples decreased by 87.8% as compared with that of uncoated samples at 150 kHz. Magnetic measurements show that the sample with 1.25 wt% SiO2 has an acceptable real part and minimum imaginary part of permeability in comparison with other samples. Also, the annealing treatment increased the initial permeability, the maximum permeability and the magnetic induction and decreased the coercivity with increasing temperature in the range 300-600 °C. The results of the loss separation imply that the annealed SMCs have a higher hysteresis loss coefficient (k2) and lower eddy current loss coefficient (k3) as compared with the pure iron compacts after the same heat treatment due to the preservation of the SiO2 layer.

  10. Impact of Amorphous SiO2 Nanoparticles on a Living Organism: Morphological, Behavioral, and Molecular Biology Implications

    PubMed Central

    Ambrosone, Alfredo; Scotto di Vettimo, Maria Rosaria; Malvindi, Maria Ada; Roopin, Modi; Levy, Oren; Marchesano, Valentina; Pompa, Pier Paolo; Tortiglione, Claudia; Tino, Angela

    2014-01-01

    It is generally accepted that silica (SiO2) is not toxic. But the increasing use of silica nanoparticles (SiO2NPs) in many different industrial fields has prompted the careful investigation of their toxicity in biological systems. In this report, we describe the effects elicited by SiO2NPs on animal and cell physiology. Stable and monodisperse amorphous silica nanoparticles, 25 nM in diameter, were administered to living Hydra vulgaris (Cnidaria). The dose-related effects were defined by morphological and behavioral assays. The results revealed an all-or-nothing lethal toxicity with a rather high threshold (35 nM NPs) and a LT50 of 38 h. At sub lethal doses, the morphophysiological effects included: animal morphology alterations, paralysis of the gastric region, disorganization and depletion of tentacle specialized cells, increase of apoptotic and collapsed cells, and reduction of the epithelial cell proliferation rate. Transcriptome analysis (RNAseq) revealed 45 differentially expressed genes, mostly involved in stress response and cuticle renovation. Our results show that Hydra reacts to SiO2NPs, is able to rebalance the animal homeostasis up to a relatively high doses of SiO2NPs, and that the physiological modifications are transduced to gene expression modulation. PMID:25325055

  11. Understanding degradation and breakdown of SiO2 gate dielectric with ``negative Hubbard U'' dangling bonds

    NASA Astrophysics Data System (ADS)

    Karp, James; Gitlin, Daniel; Jeong, Steve; Moyzhes, Boris

    2004-03-01

    Degradation and time dependent breakdown of SiO2 gate oxides are discussed based on the Anderson-Mott theory of amorphous solids with dangling bonds as diamagnetic "negative Hubbard U" centers. Negative-U dangling bonds in the oxide are either positive D+ centers or two-electron negative D- centers. Due to a large difference in mobility between electrons and holes, hopping current in SiO2 is mainly electron current on D+ centers. Degradation of isolation properties and time dependent breakdown of SiO2 gate oxide under voltage stress are due to the conversion of D- into D+ centers caused by the hole-hopping current in SiO2. The reaction of conversion is stress polarity dependent. Thermal conductivity of Si is approximately 100 times higher than thermal conductivity of SiO2. Heat dissipation and accumulation of D+ centers inside the oxide are important in understanding the time dependent breakdown of the oxide.

  12. Interaction of cesium adatoms with free-standing graphene and graphene-veiled SiO2 surfaces

    DOE PAGESBeta

    Weck, Philippe F.; Kim, Eunja; Biedermann, Grant W.

    2015-04-21

    In this study, the interaction of Cs adatoms with mono- or bi-layered graphene (MLG and BLG), either free-standing or on a SiO2 substrate, was investigated using density functional theory. The most stable adsorption sites for Cs are found to be hollow sites on both graphene sheets and graphene-veiled SiO2(0001). In addition, larger dipole moments are created when a MLG-veiled SiO2(0001) substrate is used for adsorption of Cs atoms compared to the adsorption on free-standing MLG, due to charge transfer occurring between the MLG and the SiO2 substrate. For the adsorption of Cs on BLG-veiled SiO2(0001) substrate, these differences are smoothedmore » out and the binding energies corresponding to different sites are nearly degenerate; smaller dipole moments created by the Cs adatoms on BLG compared to MLG are also predicted.« less

  13. Characterization of SiO 2/Si with a novel scanning capacitance microscope combined with an atomic force microscope

    NASA Astrophysics Data System (ADS)

    Tomiye, Hideto; Kawami, Hiroshi; Yao, Takafumi

    1997-06-01

    We have investigated the local electrical properties of an SiO 2/Si structure using a novel scanning capacitance microscope (SCaM) combined with an atomic force microscope (AFM). The electrical properties of the SiO 2/Si system is investigated using the microscope. We investigated a lateral p-n junction is formed by ion implantation of P into a lightly B-doped Si wafer followed by thermal oxidation. It is demonstrated that the local impurity concentration profiling is achieved by the C—V characteristics. In the next experiment we have injected charge into SiO 2 and investigated the nature of charge storage at the SiO 2/Si interface. Erasing of the written-in pattern was possible by applying a positive pulse. This paper will report on the development of a novel SCaM and its application to the characterization of SiO 2/Si and fabrication of a charge storage device.

  14. Cu-Oxide-Assisted Selective Pyrolysis of Organic Nanolayer on Patterned SiO2-Cu Surface.

    PubMed

    Kayaba, Yasuhisa; Ono, Shoko Sugiyama; Suzuki, Tsuneji; Tanaka, Hirofumi; Kohmura, Kazuo

    2015-08-12

    Organic nanolayers attract much attention for the isolation and adhesion promotion of the Cu line and insulator in Cu interconnection of microelectronic devices. This paper proposes a strategy for selective formation of adhesion nanolayer on the insulator surface with etching it on Cu surface by Cu-oxide-assisted pyrolysis. After deposition of a uniform polyelectrolyte layer on both SiO2 and Cu surfaces, heat treatment at 350 °C in ambient nitrogen was applied. Then, a larger thickness decrease was observed on the polyelectrolyte layer on Cu when compared to that on SiO2. According to the TDS and XPS analysis, the polyelectrolyte layer was relatively stable on SiO2 up to the intrinsic decomposition temperature of the material, but on the Cu surface it decomposed to volatile small molecules at a lower temperature due to Cu2O-assisted oxidization. This substrate dependent selective pyrolysis was examined for 100 nm width Cu lines and SiO2 spaces, and then a patterned polyelectrolyte layer on the SiO2 surface was obtained with a single nanometer scale edge resolution. PMID:26200473

  15. Nanoporous SiO2/TiO2 coating with enhanced interfacial compatibility for orthopedic applications

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaobing; Cao, Hengchun; You, Jing; Cheng, Xingbao; Xie, Youtao; Cao, Huiliang; Liu, Xuanyong

    2015-11-01

    Topographic modification in nanoscale is one of the most often used strategies to enhance the interfacial biocompatibility of implant materials. The aim of this work is to produce SiO2/TiO2 coatings with nanoporous structures and favorable biological properties by atmospheric plasma spraying technology and subsequently hydrothermal etching method in hydrogen fluoride solution. The effects of hydrothermal time and temperature on the microstructures and osteoblast behavior of the SiO2/TiO2 coatings were investigated. Results demonstrated that the as-sprayed SiO2/TiO2 coating was mainly composed of rutile and quartz phases. After etching, nanoporous topographies were formed on the surface of the coatings and the hydrothermal parameters had important influences on the size and shape of the pores. The interconnected network pores on the coating surface could only produce at the appropriate hydrothermal conditions (the hydrothermal time and temperature were 60 min and 100 °C, respectively). Compared to TiO2 and SiO2/TiO2 coatings, nanoporous SiO2/TiO2 coatings could enhance osteoblast adhesion and promote cell proliferation. The results suggested the potential application of the porous coatings for enhancing the biological performance of the currently used dental and orthopedic implant materials.

  16. Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

    NASA Astrophysics Data System (ADS)

    Kodigala, Subba Ramaiah; Chattopadhyay, Somnath; Overton, Charles; Ardoin, Ira; Gordon, B. J.; Johnstone, D.; Roy, D.; Barone, D.

    2015-03-01

    The SiO2 layers have been grown onto C-face and Si-face 4H-SiC substrates by two different techniques such as wet thermal oxidize process and sputtering. The deposition recipes of these techniques are carefully optimized by trails and error method. The growth effects of SiO2 on the C-face and Si-face 4H-SiC substrates are thoroughly investigated by AFM analysis. The growth mechanism of different species involved in the growth process of SiO2 by wet thermal oxide is now proposed by adopting two body classical projectile scattering. This mechanism drives to determine growth of secondary phases such as α-CH nano-islands in the grown SiO2 layer. The effect of HF etchings on the SiO2 layers grown by both techniques and on both the C-face and Si-face substrates are legitimately studied. The thicknesses of the layers determined by AFM and ellipsometry techniques are widely promulgated. The MOS capacitors are made on the Si-face 4H-SiC wafers by wet oxidation and sputtering processes, which are studied by capacitance versus voltage (CV) technique. From CV measurements, the density of trap states with variation of trap level for MOS devices is estimated.

  17. A striking mobility improvement of C60 OFET by inserting diindenoperylene layer between C60 and SiO2 gate insulator

    NASA Astrophysics Data System (ADS)

    Yang, Jin-peng; Yonezawa, Keiichiro; Hinderhofer, Alexander; Bussolotti, Fabio; Kera, Satoshi; Ueno, Nobuo

    2014-09-01

    Gap states in organic semiconductors play a crucial role in determining Energy-Level Alignment and in many cases they act as charge trapping centers to result in serious lowering of charge mobility. Thus origin of gap states has gained increasing attention in order to realize higher mobility organic devises [1-4]. Bussolotti et al. have demonstrated recently that gap states in a pentacene thin film increase even by exposing the film to inert gas and confirmed that the gas exposure mediates structural defects in the film thus gap states [4]. The results have also indicated that preparation of highly-ordered organic thin film is necessary to improve the device performance, namely to decrease trapping states. To improve the ordering of molecule in the film, deposition of a template molecular underlayer is one of the simplest methods to increase the domain size of overlayer film and its crystallinity, and thus we expect improvement of the charge mobility [5]. Hinderhofer et al. reported recently that diindenoperylene (DIP; Figure 1a) could be used as a template layer to grow highly ordered and oriented C60 film with its (111) plane parallel to the SiO2 substrate [6]. Considering the hole mobility of DIP single crystal, which is quite low (~0.005 cm2 V-1S-1 at room temperature [7]), it is expected for the DIP template C60 thin film system that lower drain current would be achieved to improve the on/off ratios based on n type C60 transistor and its electron mobility (especially on the negative Vgs region, compared to PEN modified C60 transistors [8]).

  18. Fluorescent Quantification of DNA Based on Core-Shell Fe3O4@SiO2@Au Nanocomposites and Multiplex Ligation-Dependent Probe Amplification.

    PubMed

    Fan, Jing; Yang, Haowen; Liu, Ming; Wu, Dan; Jiang, Hongrong; Zeng, Xin; Elingarami, Sauli; Ll, Zhiyang; Li, Song; Liu, Hongna; He, Nongyue

    2015-02-01

    In this research, a novel method for relative fluorescent quantification of DNA based on Fe3O4@SiO2@Au gold-coated magnetic nanocomposites (GMNPs) and multiplex ligation- dependent probe amplification (MLPA) has been developed. With the help of self-assembly, seed-mediated growth and chemical reduction method, core-shell Fe3O4@SiO2@Au GMNPs were synthesized. Through modified streptavidin on the GMNPs surface, we obtained a bead chip which can capture the biotinylated probes. Then we designed MLPA probes which were tagged with biotin or Cy3 and target DNA on the basis of human APP gene sequence. The products from the thermostable DNA ligase induced ligation reactions and PCR amplifications were incubated with SA-GMNPs. After washing, magnetic separation, spotting, the fluorescent scanning results showed our method can be used for the relative quantitative analysis of the target DNA in the concentration range of 03004~0.5 µM. PMID:26353621

  19. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    PubMed

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively. PMID:23869700

  20. Ultrasmooth and thermally stable silver-based thin films with subnanometer roughness by aluminum doping.

    PubMed

    Gu, Deen; Zhang, Cheng; Wu, Yi-Kuei; Guo, L Jay

    2014-10-28

    Rough surface and poor stability of ultrathin Ag films limit their applications in nanophotonic and optoelectronic devices. Here, we report an approach for fabricating ultrasmooth and thermally stable Ag-based thin films on SiO2/Si substrates by Al-doping. The effect of Al-doping on the surface morphology and stability of ultrathin Ag films at room temperature and elevated temperature was investigated. The 15 nm Al-doped Ag films with an Al atomic concentration of 4% have a root-mean-square roughness as low as 0.4 nm. The smooth surface morphology is maintained even after 300 °C annealing in N2. Al-doping enhances the nuclei density of films. Moreover, a capping layer spontaneously formed over the Al-doped Ag films restrains the surface diffusion and mass transportation of Ag atoms. Therefore, Al-doping induces ultrathin Ag films with highly stable and ultrasmooth surface morphology. PMID:25211394