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Sample records for sputter heavy negative

  1. Recent advancements in sputter-type heavy negative ion sources

    SciTech Connect

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few ..mu..A to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab.

  2. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  3. Sputtering Threshold Energies of Heavy Ions

    NASA Technical Reports Server (NTRS)

    Mantenieks, Maris A.

    1999-01-01

    Sputter erosion in ion thrusters has been measured in lifetests at discharge voltages as low as 25 V. Thruster operation at this discharge voltage results in component erosion rates sufficiently low to satisfy most mission requirements. It has been recognized that most of the internal sputtering in ion thrusters is done by doubly charged ions. Knowledge of the sputtering threshold voltage of a xenon molybdenum system would be beneficial in understanding the sputtering process as well as making more accurate calculations of the sputtering rates of ion thruster components. Sputtering threshold energies calculated from various formulations found in the literature results in values ranging from 28 to 200 eV. It is evident that some of these formulations cannot be relied upon to provide sputtering thresholds with any degree of accuracy. This paper re-examines the threshold energies measurements made in the early sixties by Askerov and Sena, and Stuart and Wehner. The threshold voltages as derived by Askerov and au have been reevaluated by using a different extrapolation method of sputter yields at low ion energies. The resulting threshold energies are in general similar to those measured by Stuart and Wehner. An empirical relationship is derived,for mercury and xenon ions for the ratio of the sputtering threshold energy to the sublimation energy as a function of the ratio of target to ion atomic mass.

  4. Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

    2014-01-01

    New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

  5. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    NASA Astrophysics Data System (ADS)

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-01

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 μg/cm2 thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 μg/cm2 in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 μg/cm2 because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  6. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    SciTech Connect

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-19

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 {mu}g/cm{sup 2} thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 {mu}g/cm{sup 2} in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 {mu}g/cm{sup 2} because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  7. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    NASA Technical Reports Server (NTRS)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  8. Solar-Wind Protons and Heavy Ions Sputtering of Lunar Surface Materials

    SciTech Connect

    Barghouty, N.; Meyer, Fred W; Harris, Peter R

    2011-01-01

    Lunar surface materials are exposed to {approx}1 keV/amu solar-wind protons and heavy ions on almost continuous basis. As the lunar surface consists of mostly oxides, these materials suffer, in principle, both kinetic and potential sputtering due to the actions of the solar-wind ions. Sputtering is an important mechanism affecting the composition of both the lunar surface and its tenuous exosphere. While the contribution of kinetic sputtering to the changes in the composition of the surface layer of these oxides is well understood and modeled, the role and implications of potential sputtering remain unclear. As new potential-sputtering data from multi-charged ions impacting lunar regolith simulants are becoming available from Oak Ridge National Laboratory's MIRF, we examine the role and possible implications of potential sputtering of Lunar KREEP soil. Using a non-equilibrium model we demonstrate that solar-wind heavy ions induced sputtering is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  9. Sputtering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    The potential of using the sputtering process as a deposition technique is reviewed; however, the manufacturing and sputter etching aspects are also discussed. The basic mechanism for dc and rf sputtering is described. Sputter deposition is presented in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter etching, target geometry (coating and complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also discussed are some of the specific industrial areas which are turning to sputter deposition techniques.

  10. Kinetic and Potential Sputtering of Lunar Regolith: Contribution of Solar-Wind Heavy Ions

    NASA Technical Reports Server (NTRS)

    Meyer, F. W.; Harris, P. R.; Meyer, H. M., III; Hijiazi, H.; Barghouty, A. F.

    2013-01-01

    Sputtering of lunar regolith by protons as well as solar-wind heavy ions is considered. From preliminary measurements of H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A AGGL lunar regolith simulant at solar wind velocities, and TRIM simulations of kinetic sputtering yields, the relative contributions of kinetic and potential sputtering contributions are estimated. An 80-fold enhancement of oxygen sputtering by Ar+ over same-velocity H+, and an additional x2 increase for Ar+9 over same-velocity Ar+ was measured. This enhancement persisted to the maximum fluences investigated is approximately 1016/cm (exp2). Modeling studies including the enhanced oxygen ejection by potential sputtering due to the minority heavy ion multicharged ion solar wind component, and the kinetic sputtering contribution of all solar wind constituents, as determined from TRIM sputtering simulations, indicate an overall 35% reduction of near-surface oxygen abundance. XPS analyses of simulant samples exposed to singly and multicharged Ar ions show the characteristic signature of reduced (metallic) Fe, consistent with the preferential ejection of oxygen atoms that can occur in potential sputtering of some metal oxides.

  11. Kinetic and potential sputtering of lunar regolith: The contribution of the heavy (minority) solar wind ions

    NASA Astrophysics Data System (ADS)

    Meyer, F. W.; Harris, P. R.; Meyer, H. M., III; Hijazi, H.; Barghouty, A. F.

    2013-06-01

    In this paper the sputtering of lunar regolith by protons and solar wind heavy ions is considered. From preliminary measurements of H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A AGGL lunar regolith simulant at solar wind velocities, and TRIM simulations of kinetic sputtering yields, the relative contributions of kinetic and potential sputtering contributions are estimated. An 80-fold enhancement of oxygen sputtering by Ar+ over same-velocity H+, and an additional x2 increase for Ar+9 over same-velocity Ar+ was measured. This enhancement persisted to the maximum fluences investigated (~1016/cm2). Modeling studies including the enhanced oxygen ejection by potential sputtering due to the minority heavy ion multicharged ion solar wind component, and the kinetic sputtering contribution of all solar wind constituents, as determined from TRIM sputtering simulations, indicate an overall 35% reduction of near-surface oxygen abundance. XPS analyses of simulant samples exposed to singly and multicharged Ar ions show the characteristic signature of reduced (metallic) Fe, consistent with the preferential ejection of oxygen atoms that can occur in potential sputtering of some metal oxides.

  12. Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

    SciTech Connect

    Meyer, Fred W; Harris, Peter R; Taylor, C. N.; Meyer III, Harry M; Barghouty, N.; Adams Jr., J.

    2011-01-01

    We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have higher physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.

  13. Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

    NASA Technical Reports Server (NTRS)

    Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

    2012-01-01

    Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  14. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo

    2013-07-01

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  15. Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

    SciTech Connect

    Welzel, Thomas; Ellmer, Klaus

    2012-11-15

    Reactive d.c. magnetron sputtering in Ar/O{sub 2} gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O{sup -}, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O{sup -}, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O{sup -} formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

  16. Carbon nitride films formed using sputtering and negative carbon ion sources

    SciTech Connect

    Murzin, I.H.; Tompa, G.S.; Wei, J.; Muratov, V.; Fischer, T.E.; Yakovlev, V.

    1997-12-01

    The authors report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, they compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach they used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 {micro}A/cm{sup 2} current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. They were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1:0.47. These films possess wear rates lower than 5 {times} 10{sup {minus}7} mm{sup 3}/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C{triple_bond}N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.

  17. Heavy ion elastic recoil detection analysis set up for electronic sputtering studies

    NASA Astrophysics Data System (ADS)

    Ghosh, S.; Avasthi, D. K.; Tripathi, A.; Kabiraj, D.; Sugathan, P.; Chaudhary, G. K.; Barua, P.

    2006-04-01

    Heavy ion elastic recoil detection analysis (ERDA) set up with a large solid angle (greater than or similar to 4.8 msr) Delta E - E position-sensitive telescope detector is developed at Inter University Accelerator Centre as a dedicated facility for the study of electronic sputtering of thin films under swift heavy ion (SHI) irradiation. The detector consists of a gas ionization chamber (Delta E ) and a solid-state surface barrier detector ( E ) housed in a same assembly. The electronic sputtering yield (atoms/ion) is determined by analyzing on-line fluence-dependent ERDA data obtained from a variety of thin films. Large erosion (> 10 5 atoms/ion) of carbon from a-C:H by 150 MeV Ag 13+ ions, evolution of nitrogen (greater than or similar to 880 atoms/ion) from copper nitride and depletion of oxygen (greater than or similar to 1000 atoms/ion) from copper oxide film under 200 MeV Au 15+ ion impact are studied and reported in this work. The electronic sputtering of these materials is discussed on the basis of the thermal spike model of SHI and solid interaction.

  18. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    NASA Astrophysics Data System (ADS)

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  19. Negative-continuum dielectronic recombination for heavy ions

    SciTech Connect

    Artemyev, A.N.; Yerokhin, V.A.; Beier, T.; Kozhuharov, C.; Eichler, J.; Klasnikov, A.E.; Shabaev, V.M.; Stoehlker, T.

    2003-05-01

    The process of recombination of an electron with a bare heavy nucleus via the creation of a free-positron-bound-electron pair is considered. This process is denoted as 'negative-continuum dielectronic recombination' because it results in the capture of an incident electron into a bound state accompanied by a transition of a negative-continuum electron into a bound state. The calculations are performed for a wide range of incident electron energies for Z=82 and 92.

  20. Experimental Evaluation of a Negative Ion Source for a Heavy Ion Fusion Negative Ion Driver

    SciTech Connect

    Grisham, L. R.; Hahto, S. K.; Hahto, S. T.; Kwan, J. W.; Leung, K. N.

    2004-06-16

    Negative halogen ions have recently been proposed as a possible alternative to positive ions for heavy ion fusion drivers because electron accumulation would not be a problem in the accelerator, and if desired, the beams could be photo-detached to neutrals. To test the ability to make suitable quality beams, an experiment was conducted at Lawrence Berkeley National Laboratory using chlorine in an RF-driven ion source. Without introducing any cesium (which is required to enhance negative ion production in hydrogen ion sources) a negative chlorine current density of 45 mA/cm{sup 2} was obtained under the same conditions that gave 57 45 mA/cm{sup 2} of positive chlorine, suggesting the presence of nearly as many negative ions as positive ions in the plasma near the extraction plane. The negative ion spectrum was 99.5% atomic chlorine ions, with only 0.5% molecular chlorine, and essentially no impurities. Although this experiment did not incorporate the type of electron suppression technology that i s used in negative hydrogen beam extraction, the ratio of co-extracted electrons to Cl{sup -} was as low as 7 to 1, many times lower than the ratio of their mobilities, suggesting that few electrons are present in the near-extractor plasma. This, along with the near-equivalence of the positive and negative ion currents, suggests that the plasma in this region was mostly an ion-ion plasma. The negative chlorine current density was relatively insensitive to pressure, and scaled linearly with RF power. If this linear scaling continues to hold at higher RF powers, it should permit current densities of 100 45 mA/cm{sup 2}, sufficient for present heavy ion fusion injector concepts. The effective ion temperatures of the positive and negative ions appeared to be similar and relatively low for a plasma source.

  1. Experimental evaluation of a negative ion source for a heavy ionfusion negative ion driver

    SciTech Connect

    Grisham, L.R.; Hahto, S.K.; Hahto, S.T.; Kwan, J.W.; Leung, K.N.

    2005-01-18

    Negative halogen ions have recently been proposed as a possible alternative to positive ions for heavy ion fusion drivers because electron accumulation would not be a problem in the accelerator, and if desired, the beams could be photodetached to neutrals [1,2,3]. To test the ability to make suitable quality beams, an experiment was conducted at Lawrence Berkeley National Laboratory using chlorine in an RF-driven ion source. Without introducing any cesium (which is required to enhance negative ion production in hydrogen ion sources) a negative chlorine current density of 45 mA/cm{sup 2} was obtained under the same conditions that gave 57 mA/cm{sup 2} of positive chlorine, suggesting the presence of nearly as many negative ions as positive ions in the plasma near the extraction plane. The negative ion spectrum was 99.5% atomic chlorine ions, with only 0.5% molecular chlorine, and essentially no impurities. Although this experiment did not incorporate the type of electron suppression technology that is used in negative hydrogen beam extraction, the ratio of co-extracted electrons to Cl{sup -} was as low as 7 to 1, many times lower than the ratio of their mobilities, suggesting that few electrons are present in the near-extractor plasma. This, along with the near-equivalence of the positive and negative ion currents, suggests that the plasma in this region was mostly an ion-ion plasma. The negative chlorine current density was relatively insensitive to pressure, and scaled linearly with RF power. If this linear scaling continues to hold at higher RF powers, it should permit current densities of 100 mA/cm{sup 2}, sufficient for present heavy ion fusion injector concepts. The effective ion temperatures of the positive and negative ions appeared to be similar and relatively low for a plasma source.

  2. Effects of adsorption and roughness upon the collision processes at the convertor surface of a plasma sputter negative ion source.

    PubMed

    Kenmotsu, T; Wada, M

    2012-02-01

    Atomic collision processes associated with surface production of negative hydrogen ions (H(-)) by particle reflection at molybdenum surface immersed in hydrogen plasma have been investigated. To calculate sputtering yields of Cs, as well as energy spectra and angular distributions of reflected hydrogen atoms from molybdenum surface by H(+) ion and Cs(+) ion bombardments, a Monte Carlo simulation code ACAT (Atomic Collision in Amorphous Target) was run with the corresponding surface conditions. A fractal surface model has been developed and adopted to ACAT for evaluating the effect due to roughness of target material. The results obtained with ACAT have indicated that the retention of hydrogen atoms leads to the reduction in sputtering yields of Cs, and the surface roughness does largely affect the sputtering yields of Cs. PMID:22380231

  3. Effects of adsorption and roughness upon the collision processes at the convertor surface of a plasma sputter negative ion source

    SciTech Connect

    Kenmotsu, T.; Wada, M.

    2012-02-15

    Atomic collision processes associated with surface production of negative hydrogen ions (H{sup -}) by particle reflection at molybdenum surface immersed in hydrogen plasma have been investigated. To calculate sputtering yields of Cs, as well as energy spectra and angular distributions of reflected hydrogen atoms from molybdenum surface by H{sup +} ion and Cs{sup +} ion bombardments, a Monte Carlo simulation code ACAT (Atomic Collision in Amorphous Target) was run with the corresponding surface conditions. A fractal surface model has been developed and adopted to ACAT for evaluating the effect due to roughness of target material. The results obtained with ACAT have indicated that the retention of hydrogen atoms leads to the reduction in sputtering yields of Cs, and the surface roughness does largely affect the sputtering yields of Cs.

  4. Evidence of Negative Capacitance in Piezoelectric ZnO Thin Films Sputtered on Interdigital Electrodes.

    PubMed

    Laurenti, Marco; Verna, Alessio; Chiolerio, Alessandro

    2015-11-11

    The scaling paradigm known as Moore's Law, with the shrinking of transistors and their doubling on a chip every two years, is going to reach a painful end. Another less-known paradigm, the so-called Koomey's Law, stating that the computing efficiency doubles every 1.57 years, poses other important challenges, since the efficiency of rechargeable energy sources is substantially constant, and any other evolution is based on device architecture only. How can we still increase the computational power/reduce the power consumption of our electronic environments? A first answer to this question comes from the quest for new functionalities. Within this aim, negative capacitance (NC) is becoming one of the most intriguing and studied phenomena since it can be exploited for reducing the aforementioned limiting effects in the downscaling of electronic devices. Here we report the evidence of negative capacitance in 80 nm thick ZnO thin films sputtered on Au interdigital electrodes (IDEs). Highly (002)-oriented ZnO thin films, with a fine-grained surface nanostructure and the desired chemical composition, are deposited at room temperature on different IDEs structures. Direct-current electrical measurements highlighted the semiconducting nature of ZnO (current density in the order of 1 × 10(-3) A/cm(2)). When turned into the alternating current regime (from 20 Hz to 2 MHz) the presence of NC values is observed in the low-frequency range (20-120 Hz). The loss of metal/semiconductor interface charge states under forward bias conditions, together with the presence of oxygen vacancies and piezoelectric/electrostriction effects, is believed to be at the basis of the observed negative behavior, suggesting that ZnO thin-film-based field-effect transistors can be a powerful instrument to go beyond the Boltzmann limit and the downscaling of integrated circuit elements required for the fabrication of portable and miniaturized electronic devices, especially for electric household

  5. The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films

    SciTech Connect

    Bikowski, Andre; Welzel, Thomas; Ellmer, Klaus

    2013-06-17

    In order to study the impact of negative oxygen ion bombardment on the electronic transport properties of ZnO:Al films, a systematic magnetron sputtering study from ceramic targets with excitation frequencies from DC to 27 MHz, accompanied by strongly varying discharge voltages, has been performed. Higher plasma excitation frequencies significantly improve the transport properties of ZnO:Al films. The effect of the bombardment of the films by energetic particles (negative oxygen ions) can be explained by the dynamic equilibrium between the formation of acceptor-like oxygen interstitials compensating the extrinsic donors and the self-annealing of the interstitial defects at higher deposition temperatures.

  6. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source

    SciTech Connect

    Malapit, Giovanni M.; Mahinay, Christian Lorenz S.; Poral, Matthew D.; Ramos, Henry J.

    2012-02-15

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  7. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  8. Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

    NASA Technical Reports Server (NTRS)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

  9. In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films

    SciTech Connect

    Tsukamoto, Naoki; Watanabe, Daisuke; Saito, Motoaki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    The origin of high energy negative ions during deposition of aluminum doped zinc oxide (AZO) films by dc magnetron sputtering of an AZO (Al{sub 2}O{sub 3}: 2.0 wt %) target was investigated by in situ analyses using the quadrupole mass spectrometer combined with the electrostatic energy analyzer. High energy negative oxygen (O{sup -}) ions which possessed the kinetic energy corresponding to the cathode sheath voltage were detected. The maximum flux of the O{sup -} ions was clearly observed at the location opposite to the erosion track area on the target. The flux of the O{sup -} ions changed hardly with increasing O{sub 2} flow ratio [O{sub 2}/(Ar+O{sub 2})] from 0% to 5%. The kinetic energy of the O{sup -} ions decreased with decreasing cathode sheath voltage from 403 to 337 V due to the enhancement of the vertical maximum magnetic field strength at the cathode surface from 0.025 to 0.100 T. The AZO films deposited with the lower O{sup -} bombardment energy showed the higher crystallinity and improved the electrical conductivity.

  10. Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs

    NASA Astrophysics Data System (ADS)

    Huang, Chuan-Xin; Li, Jun; Fu, Yi-Zhou; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin

    2015-12-01

    In this work, we report the influence of ZnSnO channel layer sputtering power in the stability of ZnSnO TFTs under negative gate-bias illumination stress (NBIS). The origin of threshold voltage shift results from combined effect of two factors between the little defect-induced trap densities originated from oxygen vacancies and better channel-insulator interface. The kinetic energy of the ions at a proper rf sputtering power is responsible for less defect-induced trap density and better channel-insulator interface. Therefore, the ZnSnO TFT fabricated at 75 W sputtering power shows a better NBIS stability. In addition, the trap density is extracted by temperature-dependent field-effect measurements and it is consistent with the change of stability under NBIS and thermal stress.

  11. Synergy of Electronic Excitations and Elastic Collision Spikes in Sputtering of Heavy Metal Oxides

    SciTech Connect

    Schenkel, T.; Barnes, A.V.; Hamza, A.V.; Schneider, D.H.; Banks, J.C.; Doyle, B.L.

    1998-05-01

    The emission of secondary ions and neutrals from uranium oxide has been measured for impact of highly charged, heavy ions. Total ablation rates and secondary ion yields increase strongly with projectile charge. The dependencies on projectile charge (16{lt}q{lt}70) , impact energy (10 keV{lt}E{sub kin }{lt}1 MeV) , and projectile mass of secondary ion yields demonstrate the presence of an interaction regime where electronic excitation by charge neutralization and elastic collision spikes combine synergistically. {copyright} {ital 1998} {ital The American Physical Society}

  12. Preparation of hydrogenated diamond-like carbon films by reactive Ar/CH4 high power impulse magnetron sputtering with negative pulse voltage

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2015-09-01

    High power impulse magnetron sputtering (HiPIMS) has been attracted, because sputtered target species are highly ionized. High densities of active species such as radical ions and neutral radicals can be also achieved owing to high density reactive HiPIMS plasmas. We investigate properties of hydrogenated diamond-like carbon films prepared by reactive HiPIMS of Ar/CH4 gas mixture. The properties of the films strongly depend on the plasma compositions and the kinetic energy of the carbon-containing ions which can enter into the films. The film preparation is performed at an average power of 60 W and a repetition frequency of 110 Hz, changing CH4 fraction up to 15%. Total pressure ranges between 0.3 and 2 Pa. The maximum of instantaneous power is about 20-25 kW, and the magnitude of the current is 36 A. A negative pulse voltage is applied to the substrates for about 10 μs after the target voltage changed from about -600 V to 0 V. The structural properties are characterized by Raman spectroscopy and nano-indentation method. Film hardness strongly depends on the magnitude of negative pulse voltage. By adjusting the magnitude of negative voltage, the film hardness ranges between about 10 and 22 GPa. This work is partially supported by JSPS KAKENHI Grant Number 26420230.

  13. Negative-ion source applications.

    PubMed

    Ishikawa, J

    2008-02-01

    In this paper heavy negative-ion sources which we developed and their applications for materials science are reviewed. Heavy negative ions can be effectively produced by the ejection of a sputtered atom through the optimally cesiated surface of target with a low work function. Then, enough continuous negative-ion currents for materials-science applications can be obtained. We developed several kinds of sputter-type heavy negative-ion sources such as neutral- and ionized-alkaline metal bombardment-type heavy negative-ion source and rf-plasma sputter type. In the case where a negative ion is irradiated on a material surface, surface charging seldom takes place because incoming negative charge of the negative ion is well balanced with outgoing negative charge of the released secondary electron. In the negative-ion implantation into an insulator or insulated conductive material, high precision implantation processing with charge-up free properties can be achieved. Negative-ion implantation technique, therefore, can be applied to the following novel material processing systems: the surface modification of micrometer-sized powders, the nanoparticle formation in an insulator for the quantum devices, and the nerve cell growth manipulation by precise control of the biocompatibility of polymer surface. When a negative ion with low kinetic energy approaches the solid surface, the kinetic energy causes the interatomic bonding (kinetic bonding), and formation of a metastable material is promoted. Carbon films with high constituent of sp(3) bonding, therefore, can be formed by carbon negative-ion beam deposition. PMID:18315249

  14. A study on the consequence of swift heavy ion irradiation of Zn–silica nanocomposite thin films: electronic sputtering

    PubMed Central

    Singh, Udai B; Agarwal, Dinesh C; Khan, Saif A; Ojha, Sunil; Chandra, Ramesh; Amekura, Hiro; Kabiraj, Debdulal; Avasthi, Devesh K

    2014-01-01

    Summary Zn–silica nanocomposite thin films with varying Zn metal content, deposited by atom beam sputtering technique were subjected to 100 MeV Ag ion irradiation. Rutherford backscattering spectrometry reveals the loss of Zn with irradiation, which is observed to be greater from thin films with lower Zn content. The sputtered species collected on carbon-coated transmission electron microscopy (TEM) grids consist of Zn nanoparticles of sizes comparable to those present in the nanocomposite thin film. The process of size-dependent electronic sputtering of Zn is explained on the basis of an inelastic thermal spike model. The possibility of direct cluster emission is explained by pressure spike built inside the track, initiated by a temperature spike. PMID:25383280

  15. A study on the consequence of swift heavy ion irradiation of Zn-silica nanocomposite thin films: electronic sputtering.

    PubMed

    Pannu, Compesh; Singh, Udai B; Agarwal, Dinesh C; Khan, Saif A; Ojha, Sunil; Chandra, Ramesh; Amekura, Hiro; Kabiraj, Debdulal; Avasthi, Devesh K

    2014-01-01

    Zn-silica nanocomposite thin films with varying Zn metal content, deposited by atom beam sputtering technique were subjected to 100 MeV Ag ion irradiation. Rutherford backscattering spectrometry reveals the loss of Zn with irradiation, which is observed to be greater from thin films with lower Zn content. The sputtered species collected on carbon-coated transmission electron microscopy (TEM) grids consist of Zn nanoparticles of sizes comparable to those present in the nanocomposite thin film. The process of size-dependent electronic sputtering of Zn is explained on the basis of an inelastic thermal spike model. The possibility of direct cluster emission is explained by pressure spike built inside the track, initiated by a temperature spike. PMID:25383280

  16. Relationship between negative affect and smoking topography in heavy drinking smokers.

    PubMed

    Green, ReJoyce; Bujarski, Spencer; Roche, Daniel J O; Ray, Lara A

    2016-10-01

    Heavy drinking smokers represent a sizeable subgroup of smokers for whom nicotine deprivation and alcohol use increases the urge to smoke in the laboratory and predicts lapses during smoking cessation. The manner in which individuals smoke a cigarette (i.e. smoking topography) provides a reliable index of smoking intensity and reinforcement, yet the effects of affect on smoking topography have not been thoroughly examined in heavy drinking smokers. The current study examined how affect and nicotine deprivation predict smoking behavior as participants (N=27) smoked one cigarette using a smoking topography device after 12-h of nicotine abstinence and after a priming dose of alcohol (target BrAC=0.06g/dl). Primary smoking topography measures were puff volume, velocity, duration, and inter-puff interval (IPI). The effect of nicotine deprivation was measured by the Minnesota Nicotine Withdrawal Scale (MNWS) and the Profile of Mood States (POMS). Measures were obtained at baseline (i.e. 12-h of nicotine abstinence and pre-alcohol) and 30-minutes after alcohol administration (i.e. peak BrAC). Results revealed post-priming negative affect significantly moderated the trajectories of puff volume, puff duration and IPI (p's<0.05) over the course of the cigarette, such that those with greater negative affect had flatter slopes for volume and duration and increasingly infrequent puffs. Our results suggest that baseline and post-priming negative affect following nicotine deprivation alters smoking patterns and increases nicotine exposure throughout a single cigarette. Future studies need to examine differential amounts of nicotine deprivation on response to alcohol and smoking in heavy drinking smokers. PMID:27240211

  17. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

    NASA Astrophysics Data System (ADS)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Álvarez, R.; Gil-Rostra, J.; González, J. C.; Cotrino, J.; Gonzalez-Elipe, A. R.; Palmero, A.

    2012-03-01

    Growth of amorphous SiO2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O- ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  18. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO{sub 2} thin films during growth at low temperatures

    SciTech Connect

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

    2012-03-01

    Growth of amorphous SiO{sub 2} thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O{sup -} ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO{sub 2} thin films by magnetron sputtering at low temperatures, controlled by the amount of O{sub 2} in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  19. Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2016-04-01

    Diamond-like carbon films were prepared using a reactive Ar/CH4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp3/(C-C sp2 + C-C sp3) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.

  20. Evaluation of Negative-Ion-Beam Driver Concepts for Heavy Ion Fusion

    SciTech Connect

    Larry R. Grisham

    2002-01-14

    We evaluate the feasibility of producing and using atomically neutral heavy ion beams produced from negative ions as drivers for an inertial confinement fusion reactor. Bromine and iodine appear to be the most attractive elements for the driver beams. Fluorine and chlorine appear to be the most appropriate feedstocks for initial tests of extractable negative ion current densities. With regards to ion sources, photodetachment neutralizers, and vacuum requirements for accelerators and beam transport, this approach appears feasible within existing technology, and the vacuum requirements are essentially identical to those for positive ion drivers except in the target chamber. The principal constraint is that this approach requires harder vacuums in the target chamber than do space-charge-neutralized positive ion drivers. With realistic (but perhaps pessimistic) estimates of the total ionization cross section, limiting the ionization of a neutral beam to less than 5% while traversing a four -meter path would require a chamber pressure of no more than 5 x 10{sup -5} torr. Alternatively, even at chamber pressures that are too high to allow propagation of atomically neutral beams, the negative ion approach may still have appeal, since it precludes the possibly serious problem of electron contamination of a positive ion beam during acceleration, drift compression, and focusing.

  1. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  2. Kinetic and Potential Sputtering Enhancements of Lunar Regolith Erosion: The Contribution of the Heavy Multicharged (Minority) Solar Wind Constituents

    NASA Technical Reports Server (NTRS)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    We report preliminary results for H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A lunar regolith simulant at solar wind velocities, obtain ed at the ORNL Multicharged Ion Research Facility using quadrupole ma ss spectrometry. The multi-charged Ar ions were used as proxies for i ntermediate mass solar wind multicharged ions. Prior to the Ar beam e xposures, the sample was exposed to high fluence H+ irradiation to si mulate H-loading due to the dominant solar wind constituent. A x80 en hancement of oxygen sputtering by Ar+ over same velocity H+ was measu red and an additional x2 increase for Ar+9 over same velocity Ar+ was demonstrated, giving clear evidence of the importance of potential s puttering by multicharged ions. This enhancement was observed to pers ist to the maximum fluences investigated (approx 10(exp 16)/sq cm). As discussed in a companion abstract by N. Barghouty, such persistent s puttering enhancement has significant implications on weathering and aging of lunar regolith. In addition, XPS measurements showed strong evidence of Fe reduction for those target areas that had been exposed to high fluence Ar+ and Ar+8 beams. Preferential oxidation of the Fe -reduced beam-exposed regions during transfer to the XPS system led t o enhanced O concentrations in those regions as well. On the basis of these very promising preliminary results, a NASA-LASER project on mo re extensive measurements was recently selected for funding. The prop osal expands the collaboration with NASA-MSFC for the simulation effort, and adds a new collaboration with NASA-GSFC for lunar mission-rele vant measurements.

  3. Resputtering of zinc oxide films prepared by radical assisted sputtering

    SciTech Connect

    Song Qiuming; Jiang Yousong; Song Yizhou

    2009-02-15

    Sputtering losses of zinc oxide films prepared by radical assisted sputtering were studied. It was found that the sputtering loss can be very severe in oxygenous sputtering processes of zinc oxide films. In general, resputtering caused by negative oxygen ions dominates the sputtering loss, while diffuse deposition plays a minor role. Resputtering is strongly correlated with the sputtering threshold energy of the deposited films and the concentration of O{sup -} in the sputtering zone. The balance between the oxygen concentration in the sputtering zone and the oxidation degree of the growing films depends on the sputtering rate. Our research suggests that a lower oxygen concentration in the sputtering zone and a higher oxidation degree of the growing films are favorable for reducing the resputtering losses. The sputtering loss mechanisms discussed in this work are also helpful for understanding the deposition processes of other magnetron sputtering systems.

  4. Roles of negatively-charged heavy ions and nonextensivity in cylindrical and spherical dust-ion-acoustic shock waves

    NASA Astrophysics Data System (ADS)

    Ema, S. A.; Ferdousi, M.; Sultana, S.; Mamun, A. A.

    2015-06-01

    A rigorous theoretical investigation has been carried out on the propagation of nonplanar (cylindrical and spherical) dust-ion-acoustic (DIA) waves in an unmagnetized dusty multi-ion plasma system containing nonextensive electrons, inertial negatively-charged heavy ions, positively-charged Maxwellian light ions, and negatively-charged stationary dust. The well-known reductive perturbation technique has been used to derive the modified Burgers-type equation (which describes the shock wave's properties), and its numerical solution is obtained. The basic features (viz. polarity, amplitude, width, etc.) of the cylindrical and the spherical DIA shock waves are investigated. The basic features of the cylindrical and the spherical DIA shock waves are found to have been significantly modified in a way that depends on the intrinsic parameters (viz. electron nonextensivity, heavy-ion's kinematic viscosity, heavy-to-light-ion number density ratio, electron-to-light-ion temperature ratio, etc.) of the considered plasma system. The characteristics of the cylindrical and the spherical DIA shock waves are observed to be qualitatively different from those of planar ones.

  5. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  6. Negative-ion source applications (invited)a)

    NASA Astrophysics Data System (ADS)

    Ishikawa, J.

    2008-02-01

    In this paper heavy negative-ion sources which we developed and their applications for materials science are reviewed. Heavy negative ions can be effectively produced by the ejection of a sputtered atom through the optimally cesiated surface of target with a low work function. Then, enough continuous negative-ion currents for materials-science applications can be obtained. We developed several kinds of sputter-type heavy negative-ion sources such as neutral- and ionized-alkaline metal bombardment-type heavy negative-ion source and rf-plasma sputter type. In the case where a negative ion is irradiated on a material surface, surface charging seldom takes place because incoming negative charge of the negative ion is well balanced with outgoing negative charge of the released secondary electron. In the negative-ion implantation into an insulator or insulated conductive material, high precision implantation processing with charge-up free properties can be achieved. Negative-ion implantation technique, therefore, can be applied to the following novel material processing systems: the surface modification of micrometer-sized powders, the nanoparticle formation in an insulator for the quantum devices, and the nerve cell growth manipulation by precise control of the biocompatibility of polymer surface. When a negative ion with low kinetic energy approaches the solid surface, the kinetic energy causes the interatomic bonding (kinetic bonding), and formation of a metastable material is promoted. Carbon films with high constituent of sp3 bonding, therefore, can be formed by carbon negative-ion beam deposition.

  7. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  8. Short-term mindfulness intervention reduces the negative attentional effects associated with heavy media multitasking

    PubMed Central

    Gorman, Thomas E.; Green, C. Shawn

    2016-01-01

    Recent research suggests that frequently switching between various forms of media (i.e. ‘media multitasking’) is associated with diminished attentional abilities, a disconcerting result given the prevalence of media multitasking in today’s society. In the present study, we sought to investigate the extent to which the deficits associated with frequent media multitasking can be temporarily ameliorated via a short-term mindfulness intervention previously shown to produce beneficial effects on the attentional abilities of normally functioning individuals. Consistent with previous work, we found: (1) that heavy media multitaskers showed generally poorer attentional abilities than light media multitaskers and (2) that all participants showed benefits from the short-term mindfulness intervention. Furthermore, we found that the benefits of the short-term mindfulness intervention were not equivalently large across participants. Instead, these benefits were disproportionately large in the heavy media multitaskers. While the positive outcomes were short-lived, this opens the possibility of performing long-term interventions with the goal of realizing lasting gains in this population. PMID:27086504

  9. The negative effect of heavy work life during adolescence on height development of young males.

    PubMed

    Ozener, Baniş; Ertuğrul, Berna

    2012-03-01

    The aim of this study was to determine the physical development level of post-adolescent automotive repair workers who had been employed in heavy work during adolescence, a critical developmental period. Young workers (Group 1, N = 106, Mean age = 18.33, SD = 0.65) employed an average of 6 years in workshops in the capital of Turkey, Ankara. For the control group, two groups of the same age but having a difference in terms of socioeconomic status were chosen. The first one of these was comprised of individuals who had the same socioeconomic status as the laborers (Group 2, N = 106, Mean age = 18.33, SD = 0.65) but were not laborers. The second control group was composed of individuals from the higher socioeconomic levels of society (Group 3, N = 100, Mean Age = 18.45 SD = 0.63). Weight, height and measures were taken from the individuals and the body mass index (kg/m2) was calculated. The results of the analysis show that, although all the variables of the labor group were lower than Group 2, the difference is only significant for the height variable (p < 0.05). These findings reveal that, having completed a critical developmental period such as adolescence after being employed in heavy work, the automotive repair youngsters are prone to chronic developmental retardation. PMID:22816205

  10. Short-term mindfulness intervention reduces the negative attentional effects associated with heavy media multitasking.

    PubMed

    Gorman, Thomas E; Green, C Shawn

    2016-01-01

    Recent research suggests that frequently switching between various forms of media (i.e. 'media multitasking') is associated with diminished attentional abilities, a disconcerting result given the prevalence of media multitasking in today's society. In the present study, we sought to investigate the extent to which the deficits associated with frequent media multitasking can be temporarily ameliorated via a short-term mindfulness intervention previously shown to produce beneficial effects on the attentional abilities of normally functioning individuals. Consistent with previous work, we found: (1) that heavy media multitaskers showed generally poorer attentional abilities than light media multitaskers and (2) that all participants showed benefits from the short-term mindfulness intervention. Furthermore, we found that the benefits of the short-term mindfulness intervention were not equivalently large across participants. Instead, these benefits were disproportionately large in the heavy media multitaskers. While the positive outcomes were short-lived, this opens the possibility of performing long-term interventions with the goal of realizing lasting gains in this population. PMID:27086504

  11. Modified Sigmund sputtering theory: isotopic puzzle

    NASA Astrophysics Data System (ADS)

    Zhang, Z. L.; Zhang, L.

    2005-05-01

    The theory of anisotropic sputtering proposed by Zhang [Z.L. Zhang, Phys. Rev. B 71 026101 (2005).] and [Z.L. Zhang and L. Zhang, Radiat. Eff. Defects Solids 159(5) 301 (2004).] has been generalized to sputtering of isotopic mixtures. The present theory (modified Sigmund theory) has been shown to fit numerous simulations and experimental measurements, including energy and angular distribution of sputtered atoms. In particular, the theory has successfully solved the isotope puzzle of sputtering induced by low energy and heavy ion bombardment.

  12. Absence of negative ion effects during on-axis single target sputter depositions of Y-Ba-Cu-O thin films on Si (100)

    SciTech Connect

    Migliuolo, M.; Belan, R.M.; Brewer, J.A. )

    1990-06-18

    Stoichiometric thin films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} have been deposited on (100) silicon substrates by {ital on}-{ital axis} single target magnetron sputtering. The effect of oxygen resputtering was minimized through the use of much stronger than usual magnetic assemblies in the source. A magnet assembly incorporating NdB and NdFeB magnets produced a magnetic field above the target twice as large as the one produced by a standard SmCo magnet assembly. This allows for the use of lower operating voltages and a better electron racetrack confinement, resulting in little or no oxygen resputtering. We have obtained stoichiometric or near-stoichiometric films on silicon both by dc and rf magnetron techniques at a variety of sputtering pressures and target to substrate distances.

  13. Sp3 proteins negatively regulate beta myosin heavy chain gene expression during skeletal muscle inactivity.

    PubMed

    Tsika, Gretchen; Ji, Juan; Tsika, Richard

    2004-12-01

    In adult skeletal muscle, beta myosin heavy chain (betaMyHC) gene expression is primarily restricted to slow type I fibers; however, its expression is down-regulated in response to muscle inactivity. Little is known about the signaling pathways and transcription factors that mediate this important functional response. This study demonstrates that increased binding of Sp3 to GC-rich elements in the betaMyHC promoter is a critical event in down-regulation of betaMyHC gene expression under non-weight-bearing conditions. Conversely, binding of Sp3 to these elements decreased while Sp1 binding increased with nuclear extracts from plantaris muscle exposed to mechanical overload, a stimulus that increases betaMyHC gene expression. In addition, these experiments revealed the existence of an Sp4-DNA binding complex when using adult skeletal muscle nuclear extract was used but not when nuclear extracts from cultured myotubes were used. Sp3 proteins are competitive inhibitors of Sp1-mediated betaMyHC reporter gene transactivation in both Drosophila SL-2 and mouse C2C12 myotubes. Sp4 is a weak activator of betaMyHC gene expression in SL-2 cells, which lack endogenous Sp1 activity, but does not activate betaMyHC gene expression in C2C12 myotubes, which have high levels of Sp1. These results suggest that competitive binding of Sp family proteins regulate betaMyHC gene transcription in response to altered neuromuscular activity. PMID:15572681

  14. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  15. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  16. Sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

  17. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  18. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  19. Moderating Effects of a Craving Intervention on the Relation between Negative Mood and Heavy Drinking Following Treatment for Alcohol Dependence

    ERIC Educational Resources Information Center

    Witkiewitz, Katie; Bowen, Sarah; Donovan, Dennis M.

    2011-01-01

    Objective: Negative affect is a significant predictor of alcohol relapse, and the relation between negative affect and drinking has been shown to be strongly mediated by alcohol craving. Thus, targeting craving during treatment could potentially attenuate the relation between negative affect and drinking. Method: The current study is a secondary…

  20. Perspective on the Role of Negative Ions and Ion-Ion Plasmas in Heavy Ion Fusion Science, Magnetic Fusion Energy,and Related Fields

    SciTech Connect

    Grisham, L. R.; Kwan, J. W.

    2008-08-01

    Some years ago it was suggested that halogen negative ions could offer a feasible alternative path to positive ions as a heavy ion fusion driver beam which would not suffer degradation due to electron accumulation in the accelerator and beam transport system, and which could be converted to a neutral beam by photodetachment near the chamber entrance if desired. Since then, experiments have demonstrated that negative halogen beams can be extracted and accelerated away from the gas plume near the source with a surviving current density close to what could be achieved with a positive ion of similar mass, and with comparable optical quality. In demonstrating the feasibility of halogen negative ions as heavy ion driver beams, ion - ion plasmas, an interesting and somewhat novel state of matter, were produced. These plasmas, produced near the extractor plane of the sources, appear, based upon many lines of experimental evidence, to consist of almost equal densities of positive and negative chlorine ions, with only a small component of free electrons. Serendipitously, the need to extract beams from this plasma for driver development provides a unique diagnostic tool to investigate the plasma, since each component - positive ions, negative ions, and electrons - can be extracted and measured separately. We discuss the relevance of these observations to understanding negative ion beam extraction from electronegative plasmas such as halogens, or the more familiar hydrogen of magnetic fusion ion sources. We suggest a concept which might improve negative hydrogen extraction by the addition of a halogen. The possibility and challenges of producing ion - ion plasmas with thin targets of halogens or, perhaps, salt, is briefly addressed.

  1. Perspective on the Role of Negative Ions and Ion-Ion Plasmas in Heavy Ion Fusion Science, Magnetic Fusion Energy, and Related Fields

    SciTech Connect

    Grisham, L.R.; Kwan, J.W.

    2008-08-01

    Some years ago it was suggested that halogen negative ions [1]could offer a feasible alternative path to positive ions as a heavy ion fusion driver beam which would not suffer degradation due to electron accumulation in the accelerator and beam transport system, and which could be converted to a neutral beam by photodetachment near the chamber entrance if desired. Since then, experiments have demonstrated that negative halogen beams can be extracted and accelerated away from the gas plume near the source with a surviving current density close to what could be achieved with a positive ion of similar mass, and with comparable optical quality. In demonstrating the feasibility of halogen negative ions as heavy ion driver beams, ion - ion plasmas, an interesting and somewhat novel state of matter, were produced. These plasmas, produced near the extractor plane of the sources, appear, based upon many lines of experimental evidence, to consist of almost equal densities of positive and negative chlorine ions, with only a small component of free electrons. Serendipitously, the need to extract beams from this plasma for driver development provides a unique diagnostic tool to investigate the plasma, since each component - positive ions, negative ions, and electrons -- can be extracted and measured separately. We discuss the relevance of these observations to understanding negative ion beam extraction from electronegative plasmas such as halogens, or the more familiar hydrogen of magnetic fusion ion sources. We suggest a concept which might improve negative hydrogen extraction by the addition of a halogen. The possibility and challenges of producing ion-ion plasmas with thin targets of halogens or, perhaps, salt, is briefly addressed.

  2. Perspective on the Role of Negative Ions and Ion-Ion Plasmas in Heavy Ion Fusion Science, Magnetic Fusion Energy, and Related Fields

    SciTech Connect

    L. Grisham and J.W. Kwan

    2008-08-12

    Some years ago it was suggested that halogen negative ions [1] could offer a feasible alternative path to positive ions as a heavy ion fusion driver beam which would not suffer degradation due to electron accumulation in the accelerator and beam transport system, and which could be converted to a neutral beam by photodetachment near the chamber entrance if desired. Since then, experiments have demonstrated that negative halogen beams can be extracted and accelerated away from the gas plume near the source with a surviving current density close to what could be achieved with a positive ion of similar mass, and with comparable optical quality. In demonstrating the feasibility of halogen negative ions as heavy ion driver beams, ion - ion plasmas, an interesting and somewhat novel state of matter, were produced. These plasmas, produced near the extractor plane of the sources, appear, based upon many lines of experimental evidence, to consist of almost equal densities of positive and negative chlorine ions, with only a small component of free electrons. Serendipitously, the need to extract beams from this plasma for driver development provides a unique diagnostic tool to investigate the plasma, since each component - positive ions, negative ions, and electrons -- can be extracted and measured separately. We discuss the relevance of these observations to understanding negative ion beam extraction from electronegative plasmas such as halogens, or the more familiar hydrogen of magnetic fusion ion sources. We suggest a concept which might improve negative hydrogen extraction by the addition of a halogen. The possibility and challenges of producing ion-ion plasmas with thin targets of halogens or, perhaps, salt, is briefly addressed.

  3. Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy

  4. Sputter ejection of matter from Io

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Watson, C. C.; Yung, Y. L.

    1981-01-01

    Direct collisional interaction of magnetospheric particles, particularly 520-eV S ions, with Io, cause sputter removal of matter. It is estimated that direct sputtering of a full-disk S-containing atmosphere with an exobase at a few hundred km, can provide up to 5 x 10 to the tenth S atoms per sq cm-s. Supplies of S and O required to stabilize the torus are estimated to be from 10 to the 10th to 10 to the 12th per sq cm-s. Sputtering rates are calculated for an atmosphere containing a one percent concentration of Na and K, and are found to be large enough to supply the fluxes required to maintain the Na and K clouds. Sputtering is found to remove heavy molecules from the atmosphere, and the rate of direct sputtering of unprotected surfaces is calculated for ejections of S and Na. Atomic species on the surface are ejected at a rate proportional to the surface abundance; and plume sputtering, avalanche cascading, and ionic saltation which lead to spatial and temporal variations in the number of ejected particles are observed.

  5. Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

    2010-01-01

    Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

  6. Detection of heavy-metal ions using liquid crystal droplet patterns modulated by interaction between negatively charged carboxylate and heavy-metal cations.

    PubMed

    Han, Gyeo-Re; Jang, Chang-Hyun

    2014-10-01

    Herein, we demonstrated a simple, sensitive, and rapid label-free detection method for heavy-metal (HM) ions using liquid crystal (LC) droplet patterns on a solid surface. Stearic-acid-doped LC droplet patterns were spontaneously generated on an n-octyltrichlorosilane (OTS)-treated glass substrate by evaporating a solution of the nematic LC, 4-cyano-4'-pentylbiphenyl (5CB), dissolved in heptane. The optical appearance of the droplet patterns was a dark crossed texture when in contact with air, which represents the homeotropic orientation of the LC. This was caused by the steric interaction between the LC molecules and the alkyl chains of the OTS-treated surface. The dark crossed appearance of the acid-doped LC patterns was maintained after the addition of phosphate buffered saline (PBS) solution (pH 8.1 at 25°C). The deprotonated stearic-acid molecules self-assembled through the LC/aqueous interface, thereby supporting the homeotropic anchoring of 5CB. However, the optical image of the acid-doped LC droplet patterns incubated with PBS containing HM ions appeared bright, indicating a planar orientation of 5CB at the aqueous/LC droplet interface. This dark to bright transition of the LC patterns was caused by HM ions attached to the deprotonated carboxylate moiety, followed by the sequential interruption of the self-assembly of the stearic acid at the LC/aqueous interface. The results showed that the acid-doped LC pattern system not only enabled the highly sensitive detection of HM ions at a sub-nanomolar concentration but it also facilitated rapid detection (<10 min) with simple procedures. PMID:25059128

  7. Solar system sputtering

    NASA Technical Reports Server (NTRS)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  8. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  9. Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Niu, Jian-wen; Ma, Rui-xin; Wang, Yuan-yuan; Li, Shi-na; Cheng, Shi-yao; Liu, Zi-lin

    2014-09-01

    Amorphous indium-gallium-zinc oxide (IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency (RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.

  10. Possible isotopic fractionation effects in sputtered minerals

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Watson, C. C.; Tombrello, T. A.

    1980-01-01

    A model which makes definite predictions for the fractionation of isotopes in sputtered material is discussed. The fractionation patterns are nonlinear, and the pattern for a particular set of isotopes depends on the chemical matrix within which those isotopes are contained. Calculations are presented for all nonmonoisotopic elements contained in the minerals perovskite, anorthite, ackermanite, enstatite, and troilite. All isotopes are fractionated at the level of approximately 4-6 deg/o per atomic mass unit. Oxygen is always positively fractionated (heavier isotopes sputtered preferentially), and heavier elements are generally negatively fractioned (light isotopes sputtered preferentially). The value of Delta (O-18:O-16) is always less by about 1.8 deg/o than a linear extrapolation based upon the calculated delta (O-17:O-16) value would suggest. The phenomenon of both negative and positive fractionation patterns from a single target mineral are used to make an experimental test of the proposed model.

  11. A semiparametric negative binomial generalized linear model for modeling over-dispersed count data with a heavy tail: Characteristics and applications to crash data.

    PubMed

    Shirazi, Mohammadali; Lord, Dominique; Dhavala, Soma Sekhar; Geedipally, Srinivas Reddy

    2016-06-01

    Crash data can often be characterized by over-dispersion, heavy (long) tail and many observations with the value zero. Over the last few years, a small number of researchers have started developing and applying novel and innovative multi-parameter models to analyze such data. These multi-parameter models have been proposed for overcoming the limitations of the traditional negative binomial (NB) model, which cannot handle this kind of data efficiently. The research documented in this paper continues the work related to multi-parameter models. The objective of this paper is to document the development and application of a flexible NB generalized linear model with randomly distributed mixed effects characterized by the Dirichlet process (NB-DP) to model crash data. The objective of the study was accomplished using two datasets. The new model was compared to the NB and the recently introduced model based on the mixture of the NB and Lindley (NB-L) distributions. Overall, the research study shows that the NB-DP model offers a better performance than the NB model once data are over-dispersed and have a heavy tail. The NB-DP performed better than the NB-L when the dataset has a heavy tail, but a smaller percentage of zeros. However, both models performed similarly when the dataset contained a large amount of zeros. In addition to a greater flexibility, the NB-DP provides a clustering by-product that allows the safety analyst to better understand the characteristics of the data, such as the identification of outliers and sources of dispersion. PMID:26945472

  12. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1977-01-01

    An investigation is conducted concerning the mass-fractionation effects produced in connection with the bombardment of the moon by the solar wind. Most of the material ejected by sputtering escapes the moon's gravity, but some returning matter settles back onto the lunar surface. This material, which is somewhat richer in heavier atoms than the starting surface, is incorporated into the heavily radiation-damaged outer surfaces of grains. The investigation indicates that sputtering of the lunar surface by the solar wind will give rise to significant surface heavy atom enrichments if the grain surfaces are allowed to come into sputtering equilibrium.

  13. Does Alcohol or Delinquency Help Adolescents Feel Better Over Time? A Study on the Influence of Heavy Drinking and Violent/Property Offending on Negative Emotions.

    PubMed

    Jang, Sung Joon; Ferguson, Todd W; Rhodes, Jeremy R

    2016-05-01

    Conceptualizing adolescent drinking and delinquency as adaptations to strain, we explore whether they (a) decrease or increase the probability of feeling depression and anxiety later and (b) ameliorate or aggravate the effect of strain on the negative emotions over time. These relationships are also examined for gender differences by analyzing data separately for males and females as well as both combined. We conducted ordinary least squares regression analysis of panel data from the first two waves of the National Longitudinal Study of Adolescent to Adult Health. Heavy drinking and serious delinquency were found to increase the probability of feeling depression and anxiety later, whereas they tend to ameliorate the emotionally deleterious effect of strain for males and, to a lesser extent, females. PMID:25519851

  14. Modified Ion-Acoustic Shock Waves and Double Layers in a Degenerate Electron-Positron-Ion Plasma in Presence of Heavy Negative Ions

    NASA Astrophysics Data System (ADS)

    Hossen, M. A.; Hossen, M. R.; Mamun, A. A.

    2014-12-01

    A general theory for nonlinear propagation of one dimensional modified ion-acoustic waves in an unmagnetized electron-positron-ion (e-p-i) degenerate plasma is investigated. This plasma system is assumed to contain relativistic electron and positron fluids, non-degenerate viscous positive ions, and negatively charged static heavy ions. The modified Burgers and Gardner equations have been derived by employing the reductive perturbation method and analyzed in order to identify the basic features (polarity, width, speed, etc.) of shock and double layer (DL) structures. It is observed that the basic features of these shock and DL structures obtained from this analysis are significantly different from those obtained from the analysis of standard Gardner or Burgers equations. The implications of these results in space and interstellar compact objects (viz. non-rotating white dwarfs, neutron stars, etc.) are also briefly mentioned.

  15. Sputtering by the Solar Wind: Effects of Variable Composition

    NASA Technical Reports Server (NTRS)

    Killen, R. M.; Arrell, W. M.; Sarantos, M.; Delory, G. T.

    2011-01-01

    It has long been recognized that solar wind bombardment onto exposed surfaces in the solar system will produce an energetic component to the exospheres about those bodies. Laboratory experiments have shown that there is no increase in the sputtering yield caused by highly charged heavy ions for metallic and for semiconducting surfaces, but the sputter yield can be noticeably increased in the case of a good insulating surface. Recently measurements of the solar wind composition have become available. It is now known that the solar wind composition is highly dependent on the origin of the particular plasma. Using the measured composition of the slow wind, fast wind, solar energetic particle (SEP) population, and coronal mass ejection (CME), broken down into its various components, we have estimated the total sputter yield for each type of solar wind. Whereas many previous calculations of sputtering were limited to the effects of proton bombardment. we show that the heavy ion component. especially the He++ component. can greatly enhance the total sputter yield during times when the heavy ion population is enhanced. We will discuss sputtering of both neutrals and ions.

  16. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  17. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  18. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  19. Fundamental sputtering studies: Nonresonant ionization of sputtered neutrals

    SciTech Connect

    Burnett, J.W.; Pellin, M.J.; Calaway, W.F.; Gruen, D.M. ); Yates, J.T. Jr. . Dept. of Chemistry)

    1989-01-04

    Because of the practical importance of sputtering, numerous theories and computer simulations are used for predicting many aspects of the sputtering process. Unfortunately, many of the calculated sputtering results are untested by experiment. Until recently, most sputtering experiments required either very high ion fluences or the detection of only minor constituents of the sputtered flux, i.e., ions. These techniques may miss the subtleties involved in the sputtering process. High-detection-efficiency mass spectrometry, coupled with the laser ionization of neutral atoms, allows the detection of the major sputtered species with very low incident ion fluences. The depth-of-origin of sputtered atoms is one example of an important but poorly understood aspect of the sputtering process. By following the sputtering yield of a substrate atom with various coverages of an adsorbed overlayer, the depth of origin of sputtered atoms has been determined. Our results indicate that two-thirds of the sputtered flux originates in the topmost atomic layer. The ion-dose dependence of sputtering yields has long been assumed to be quite minor for low- to-moderate primary ion fluences. We have observed a two-fold decrease in the sputtering yield of the Ru(0001) surface for very low primary ion fluences. Data analysis results in a cross section for damage of 2.7 {plus minus} 1.0 {times} 10{sup {minus}15}cm{sup 2}. 40 refs., 3 figs., 2 tabs.

  20. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  1. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  2. Contamination removal by ion sputtering

    NASA Astrophysics Data System (ADS)

    Shaw, Christopher G.

    1990-11-01

    Experimental investigations are described for ion-beam sputtering and RF-plasma sputtering to determine the effectiveness of the methods for removing contaminants from an optical surface. The effects of ion-beam sputtering are tested with an ion gun and measured by mounting a 5-MHz quartz-crystal microbalance on a sample holder and simulating spacecraft contamination. RF-plasma sputtering involves the application of an alternating electric field to opposing electrodes immersed in a low density gas, and is tested with the same setup. The energy dependence of the sputtering yields is measured to determine whether the different contaminants are removed and whether the mirror surface is affected. Ion-beam sputtering removes all contaminants tested, but also affects the mirror surface at high energies. When the correct DC bias is applied, RF sputtering can remove the contaminants without removing the metal-mirror surface.

  3. Sputtering and secondary ion emission properties of alkali metal films and adsorbed monolayers

    SciTech Connect

    Krauss, A R; Gruen, D M

    1980-01-01

    The secondary ion emission of alkali metal adsorbed monlayer and multilayer films has been studied. Profiling with sub-monolayer resolution has been performed by Auger, x-ray photoemission and secondary ion mass spectroscopy. Characteristic differences in the sputtering yields, and ion fraction have been observed which are associated with both the surface bonding properties and the mechanism leading to the formation of secondary ions. By sputtering with a negative bias applied to the sample, positive secondary ions are returned to the surface, resulting in a reduced sputter-induced erosion rate. Comparison with the results obtained with K and Li overlayers sputtered without sample bias provides an experimental value of both the total and secondary ion sputtering yields. The first and second monolayers can be readily identified and the first monolayer exhibits a lower sputtering yield and higher secondary ion fraction. This result is related to adsorption theory and measured values are compared with those obtained by thermal desorption measurements.

  4. Adherence of sputtered titanium carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1979-01-01

    Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited, in practice, by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium based alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

  5. Xenon Sputter Yield Measurements for Ion Thruster Materials

    NASA Technical Reports Server (NTRS)

    Williams, John D.; Gardner, Michael M.; Johnson, Mark L.; Wilbur, Paul J.

    2003-01-01

    In this paper, we describe a technique that was used to measure total and differential sputter yields of materials important to high specific impulse ion thrusters. The heart of the technique is a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. Differential sputtering yields were generally measured over a full 180 deg arc in a plane that included the beam centerline and the normal vector to the target surface. Sputter yield results are presented for a xenon ion energy range from 0.5 to 10 keV and an angle of incidence range from 0 deg to 70 deg from the target surface normal direction for targets consisting of molybdenum, titanium, solid (Poco) graphite, and flexible graphite (grafoil). Total sputter yields are calculated using a simple integration procedure and comparisons are made to sputter yields obtained from the literature. In general, the agreement between the available data is good. As expected for heavy xenon ions, the differential and total sputter yields are found to be strong functions of angle of incidence. Significant under- and over-cosine behavior is observed at low- and high-ion energies, respectively. In addition, strong differences in differential yield behavior are observed between low-Z targets (C and Ti) and high-Z targets (Mo). Curve fits to the differential sputter yield data are provided. They should prove useful to analysts interested in predicting the erosion profiles of ion thruster components and determining where the erosion products re-deposit.

  6. An experimental investigation of fractionation by sputter deposition. [application to solar wind irradiation of lunar soil

    NASA Technical Reports Server (NTRS)

    Paruso, D. M.; Cassidy, W. A.; Hapke, B. W.

    1978-01-01

    Artificial glass targets composed of elements varying widely in atomic weight were irradiated at an angle of incidence of 45 deg by 2-keV hydrogen ions at a current density of .33 mA/sq cm, and sputtered atoms were caught on a molybdenum film. Analyses of the sputter-deposited films and unsputtered target glasses were carried out by electron microprobe. The backward-sputtered component was found to be enriched in elements of low atomic weight, while the forward-sputtered component was enriched in heavy atoms. These results indicate that at the lunar surface lighter elements and isotopes would tend to be ejected in backward directions, escaping directly through the openings which admit bombarding ions without first striking an adjacent grain surface; heavy elements and isotopes would be forward-sputtered deeper into the soil and be preferentially retained, contributing to the reported enrichments of heavy elements and isotopes. Additional results show that the binding energy of an element in its oxide form influences the sticking coefficient of a sputtered atom; elements of low binding energy are likely to desorb, while elements of high binding energy tend to stick to the first bounce surface.

  7. Laser spectroscopy of sputtered atoms

    SciTech Connect

    Gruen, D.M.; Pellin, M.J.; Young, C.E.; Calaway, W.F.

    1985-01-01

    The use of laser radiation to study the sputtering process is of relatively recent origin. Much has been learned from this work about the basic physics of the sputtering process itself through measurements of velocity and excited state distributions of sputtered atoms and the effects of adsorbates on substrate sputtering yields. Furthermore, the identification, characterization, and sensitive detection of sputtered atoms by laser spectroscopy has led to the development of in situ diagnostics for impurity fluxes in the plasma edge regions of tokamaks and of ultrasensitive methods (ppB Fe in Si) for surface analysis with ultralow (picocoulomb) ion fluences. The techniques involved in this work, laser fluorescence and multiphoton resonance ionization spectroscopy, will be described and illustrations given of results achieved up to now. 55 refs., 5 figs., 1 tab.

  8. Sputtering. [as deposition technique in mechanical engineering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  9. Simultaneous ion sputter polishing and deposition

    NASA Technical Reports Server (NTRS)

    Rutledge, S.; Banks, B.; Brdar, M.

    1981-01-01

    Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

  10. Sputter etching of hemispherical bearings

    NASA Technical Reports Server (NTRS)

    Schiesser, R. J.

    1972-01-01

    Technique was developed for fabricating three dimensional pumping grooves on gas bearings by sputter etching. Method eliminates problems such as groove nonuniformity, profile, and finish, which are associated with normal grooving methods.

  11. A miniature x-ray compatible sputtering system for studying in situ high T sub c thin film growth

    SciTech Connect

    Zheng, J.Q.; Shih, M.C.; Wang, X.K.; Williams, S.; Dutta, P.; Chang, R.P.H.; Ketterson, J.B. )

    1991-01-01

    We describe a miniature sputtering system incorporating an unconventional magnetron gun and a right angle sputtering geometry. The design essentially eliminates the negative ion resputtering effect encountered in the sputtering of high {ital T}{sub {ital c}} oxide films. The geometry is compatible with the in-plane and conventional {theta}--2{theta} diffraction geometries and a chamber with two appropriate sector x-ray windows has been constructed and operated at a synchrotron. Detailed data on the performance of the sputtering gun are presented.

  12. Correlation of chemical composition and electrical properties of rf sputtered alumina films

    SciTech Connect

    Voigt, M.; Bergmaier, A.; Dollinger, G.; Sokolowski, M.

    2009-03-15

    Alumina films were prepared by radio frequency magnetron sputtering from an aluminum oxide target on an indium tin oxide covered glass. The purpose of the study was to test the influence of the sputter parameters on the elemental composition, surface morphology, and electrical insulation properties (breakdown fields and leakage currents). Tested parameters were the sputter gas (Ar) pressure, the sputter rate, the sputter power, the sputter gas composition (Ar:O{sub 2}), the conditioning of the target, the residual base pressure, and the substrate temperature. The surface morphology of the films was investigated by atomic force microscopy. Depth profiles of the elemental compositions were measured by elastic recoil detection using energetic heavy ions, and the insulation properties were investigated by current voltage measurements and impedance spectroscopy. The main finding is that the leakage currents increase by about five orders of magnitude, if the atomic ratio of O:Al increases from 1.35 to 2.0. In parallel the breakdown fields decrease by a factor of 100, and the character of the breakdowns changes from soft to hard. The highest breakdown fields (2.4 MV/cm) and smallest leakage currents (6.5x10{sup -8} A/cm{sup 2} at 2.0 MV/cm) are obtained for slightly Al rich films with small atomic concentrations of H (<0.5 at. %). These films were sputtered in pure Ar and under the lowest possible pressure of the residual gas.

  13. Ion fluence dependence of the total sputtering yield and differential angular sputtering yield of bismuth due to 50 keV argon ion irradiation

    NASA Astrophysics Data System (ADS)

    Deoli, Naresh T.; Phinney, Lucas C.; Weathers, Duncan L.

    2014-08-01

    The dependences of the total sputtering yield of Bi and the differential angular distribution of these sputtered Bi atoms on the fluence of 50 keV Ar+ ions at normal incidence have been experimentally measured. Polycrystalline Bi targets were used for these purposes. The collector technique and accurate current integration methods were adopted for the determination of angular distributions of sputtered Bi atoms. The ion fluence was varied from 1.9 × 1019 to 3.1 × 1020 ions/cm2. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum (∼5 × 10-9 Torr). The collector foils were subsequently analyzed using heavy ion Rutherford backscattering spectroscopy. The shape of the angular distribution of sputtered atoms was found not to change significantly with the fluence, but the sputtering yield increased significantly from 2.2 ± 0.2 to 9.6 ± 0.6 atoms/ion over the fluence range studied.

  14. Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode

    NASA Astrophysics Data System (ADS)

    Bobby, A.; Shiwakoti, N.; Verma, S.; Asokan, K.; Antony, B. K.

    2016-05-01

    The Ni/n-GaAs Schottky barrier diode having thin interfacial oxide layer was subjected to 25 MeV C4+ ion irradiation at selected fluences. The in-situ capacitance and dielectric properties were investigated in the 1 KHz to 5 MHz frequency range. The results show a decrease in capacitance with increase in ion fluence at low frequencies. Interestingly, a negative capacitance effect was also observed in this frequency range in all the samples. As a consequence, changes were observed in parameters like series resistance, conductance, dielectric loss, dielectric constant, loss tangent and ac electrical conductivity. At high frequencies, the capacitance reaches the geometric value 'C0'. The results were interpreted in terms of the generation of irradiation induced traps, carrier capture and emission from deep and shallow states and its frequency dependent saturation effects.

  15. Sputtering and heating of Titan's upper atmosphere.

    PubMed

    Johnson, Robert E

    2009-02-28

    Titan is an important endpoint for understanding atmospheric evolution. Prior to Cassini's arrival at Saturn, modelling based on Voyager data indicated that the hydrogen escape rate was large (1-3x1028amus-1), but the escape rates for carbon and nitrogen species were relatively small (5x1026amus-1) and dominated by atmospheric sputtering. Recent analysis of the structure of Titan's thermosphere and corona attained from the Ion and Neutral Mass Spectrometer and the Huygens Atmospheric Structure Instrument on Cassini have led to substantially larger estimates of the loss rate for heavy species (0.3-5x1028amus-1). At the largest rate suggested, a mass that is a significant fraction of the present atmosphere would have been lost to space in 4Gyr; hence, understanding the nature of the processes driving escape is critical. The recent estimates of neutral escape are reviewed here, with particular emphasis on plasma-induced sputtering and heating. Whereas the loss of hydrogen is clearly indicated by the altitude dependence of the H2 density, three different one-dimensional models were used to estimate the heavy-molecule loss rate using the Cassini data for atmospheric density versus altitude. The solar heating rate and the nitrogen density profile versus altitude were used in a fluid dynamic model to extract an average net upward flux below the exobase; the diffusion of methane through nitrogen was described below the exobase using a model that allowed for outward flow; and the coronal structure above the exobase was simulated by presuming that the observed atmospheric structure was due to solar- and plasma-induced hot particle production. In the latter, it was hypothesized that hot recoils from photochemistry or plasma-ion-induced heating were required. In the other two models, the upward flow extracted is driven by heat conduction from below, which is assumed to continue to act above the nominal exobase, producing a process referred to as 'slow hydrodynamic' escape

  16. Collective effects in electronic sputtering of organic molecular ions by fast incident cluster ions

    SciTech Connect

    Salehpour, M.; Fishel, D.L.; Hunt, J.E.

    1988-07-15

    The collective sputtering effect of fast primary cluster ions on the yield of secondary molecular ions has been demonstrated for the first time. Results show that the sputtering yield of valine negative molecular ions per incident carbon atom, in a C/sup +//sub n/ incident cluster ion, increases with increasing n. The yield results are interpreted as a direct effect of the enhancement in the electronic stopping power per atom in cluster ions compared to atomic ions.

  17. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  18. Pulsed high-voltage dc RF sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S., Jr.; Shaltens, R. K.

    1969-01-01

    Sputtering technique uses pulsed high voltage direct current to the object to be plated and a radio frequency sputtered film source. Resultant film has excellent adhesion, and objects can be plated uniformly on all sides.

  19. Sputtered silicon nitride coatings for wear protection

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

  20. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  1. Mass dependence of nitride sputtering

    NASA Astrophysics Data System (ADS)

    Elovikov, S. S.; Khrustachev, I. K.; Mosunov, A. S.; Yurasova, V. E.

    2003-08-01

    A molecular dynamics simulation was performed to study the sputtering yield Y for BN, AlN and GaN polycrystals of wurtzite structure as a function of the masses m 1 of bombarding ions with energies from 200 to 2000 eV. A nonmonotonic behavior of the Y ( m 1 ) curve was obtained for the irradiation by low-energy ions, the curve having a maximum with a position being dependent on m 2 / m 1 ( m 2 is the average mass of atoms in a compound). For AlN and GaN the maximum was observed at m 2 / m 1 = 2, and for BN at m 2 / m 1 = 1. The effect of the mass of bombarding ions on the mean energies and energy spectra of sputtered particles, the depth of sputtering origin, and the generation of emitted atoms for nitrides was also investigated and discussed.

  2. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  3. Faraday screen sputtering on TPX

    SciTech Connect

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author`s emphasis will be on both impurity generation as a possible source of increased Z{sub eff}, and also on actual erosion-lifetime of the materials under worst case conditions.

  4. Transport of sputtered neutral particles

    SciTech Connect

    Parker, G.J.; Hitchon, W.N.G.; Koch, D.J. ||

    1995-04-01

    The initial deposition rate of sputtered material along the walls of a trench is calculated numerically. The numerical scheme is a nonstatistical description of long-mean-free-path transport in the gas phase. Gas-phase collisions are included by using a ``transition matrix`` to describe the particle motion, which in the present work is from the source through a cylindrical chamber and into a rectangular trench. The method is much faster and somewhat more accurate than Monte Carlo methods. Initial deposition rates of sputtered material along the walls of the trench are presented for various physical and geometrical situations, and the deposition rates are compared to other computational and experimental results.

  5. Fabrication of thick structures by sputtering

    NASA Technical Reports Server (NTRS)

    Kazaroff, J. M.; Mcclanahan, E. D.; Busch, R.; Moss, R. W.

    1974-01-01

    Deposit, 5500-gram of Cu-0.15 wt % Zr alloy, sputtered onto copper cylinder to average thickness of 12.29 mm. Structure was achieved with high-rate sputter deposition for about 100 hours total sputtering time. Material had twice the strength of unsputtered material at temperatures to 723 K and equivalent strength at nearly 873 K.

  6. Modeling target erosion during reactive sputtering

    NASA Astrophysics Data System (ADS)

    Strijckmans, K.; Depla, D.

    2015-03-01

    The influence of the reactive sputter conditions on the racetrack and the sputter profile for an Al/O2 DC reactive sputter system is studied by modeling. The role of redeposition, i.e. the deposition of sputtered material back on the target, is therefore taken into account. The used model RSD2013 is capable of simulating the effect of redeposition on the target condition in a spatial resolved way. Comparison between including and excluding redeposition in the RSD2013 model shows that the in-depth oxidation profile of the target differs. Modeling shows that it is important to distinguish between the formed racetrack, i.e. the erosion depth profile, and the sputter profile. The latter defines the distribution of the sputtered atoms in the vacuum chamber. As the target condition defines the sputter yield, it does determine the racetrack and the sputter profile of the planar circular target. Both the shape of the racetrack and the sputter profile change as function of the redeposition fraction as well as function of the oxygen flow change. Clear asymmetries and narrowing are observed for the racetrack shape. Similar effects are noticed for the sputter profile but to a different extent. Based on this study, the often heard misconception that the racetrack shape defines the distribution of the sputtered atoms during reactive sputtering is proven to be wrong.

  7. Anorthite sputtering by H+ and Arq+ (q = 1-9) at solar wind velocities

    DOE PAGESBeta

    Hijazi, Hussein Dib; Bannister, Mark E.; Meyer, III, Harry M.; Rouleau, Christopher M.; Barghouty, A. F.; Rickman, D. L.; Meyer, Fred W.

    2014-10-16

    Here, we report sputtering measurements of anorthite-like material, taken to be representative of soils found in the lunar highlands, impacted by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the nonreactive heavy solar wind constituents), in the charge state range +1 to +9, at fixed solar wind-relevant impact velocities of 165 and 310 km/s (0.25 keV/amu and 0.5 keV/amu). A quartz microbalance approach (QCM) for determination of total sputtering yields was used. The goal of the measurements was to determine the sputtering contributionmore » of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H+ fraction. The QCM results show a yield increase of a factor of about 80 for Ar+ versus H+ sputtering and an enhancement by a factor of 1.67 between Ar9+ and Ar+, which is a clear indication of a potential sputtering effect.« less

  8. Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1998-01-01

    An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

  9. Anorthite sputtering by H+ and Arq+ (q = 1-9) at solar wind velocities

    NASA Astrophysics Data System (ADS)

    Hijazi, H.; Bannister, M. E.; Meyer, H. M.; Rouleau, C. M.; Barghouty, A. F.; Rickman, D. L.; Meyer, F. W.

    2014-10-01

    We report sputtering measurements of anorthite-like material, taken to be representative of soils found in the lunar highlands, impacted by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the nonreactive heavy solar wind constituents), in the charge state range +1 to +9, at fixed solar wind-relevant impact velocities of 165 and 310 km/s (0.25 keV/amu and 0.5 keV/amu). A quartz microbalance approach (QCM) for determination of total sputtering yields was used. The goal of the measurements was to determine the sputtering contribution of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H+ fraction. The QCM results show a yield increase of a factor of about 80 for Ar+ versus H+ sputtering and an enhancement by a factor of 1.67 between Ar9+ and Ar+, which is a clear indication of a potential sputtering effect.

  10. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  11. Sputtering technology in solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1978-01-01

    Current and potential sputtering technology is reviewed as it applies primarily to the deposition of MoS2, though such lubricants as WS2 and PTFE are also considered. It is shown by electron microscopy and surface sensitive analytical techniques that the lubricating properties of sputtered MoS2 films are directly influenced by the sputtering parameters selected (i.e., power density, pressure, sputter etching, dc-biasing, etc.), substrate temperature, chemistry, topography, and environmental conditions during the friction test. Electron micrographs and diffractograms of sputtered MoS2 films clearly show the resultant changes in film morphology which affect film adherence and frictional properties.

  12. Electronic sputtering of vitreous SiO2: Experimental and modeling results

    NASA Astrophysics Data System (ADS)

    Toulemonde, M.; Assmann, W.; Trautmann, C.

    2016-07-01

    The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.

  13. Redeposition of the sputtered surface in limiters

    SciTech Connect

    Brooks, J.N.; McGrath, R.T.

    1981-01-01

    Erosion of the surface coating of a pumped limiter by sputtering may be a critical life-limiting issue for future tokamak reactors. Redeposition of the sputtered material, however, may extend the coating life significantly. This subject has now been studied through the use of a code which models the redeposition of sputtered material which gets ionized in the scrape-off layer. The code also treats the transfer of wall-sputtered material to the limiter. The code uses models of the plasma density and temperature in the scrape-off zone, sheath potential, sputtering coefficients, spatial distribution of the sputtered atoms, and electron impact ionization coefficient for the sputtered atoms. The studies were made for high flux and low flux edge conditions corresponding to FED and STARFIRE limiters and assumed plasma-edge parameters. The results indicate that substantial redeposition from the scrape-off layer ionized neutrals occurs in the cases considered.

  14. Sputtering technology in solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1978-01-01

    Potential and present sputtering technology is discussed as it applies to the deposition of solid film lubricants particularly MoS2, WS2, and PTFE. Since the sputtered films are very thin, the selection of the sputtering parameters and substrate condition is very critical as reflected by the lubricating properties. It was shown with sputtered MoS2 films that the lubricating characteristics are directly affected by the selected sputtering parameters (power density, pressure, sputter etching, dc-biasing, etc.) and the substrate temperature, chemistry, topography and the environmental conditions during the friction tests. Electron microscopy and other surface sensitive analytical techniques illustrate the resulting changes in sputtered MoS2 film morphology and chemistry which directly influence the film adherence and frictional properties.

  15. Heavy particle radiotherapy: prospects and pitfalls

    SciTech Connect

    Faju, M.R.

    1980-01-01

    The use of heavy particles in radiotherapy of tumor volumes is examined. Particles considered are protons, helium ions, heavy ions, negative pions, and fast neutrons. Advantages and disadvantages are discussed. (ACR)

  16. Gallium ion extraction from a plasma sputter-type ion source.

    PubMed

    Vasquez, M; Imakita, S; Kasuya, T; Maeno, S; Wada, M

    2010-02-01

    A broad mixed ion beam containing positive ions of gallium (Ga) was produced with a plasma sputter-type ion source. Liquid Ga was suspended on a tungsten reservoir to be sputtered and postionized in argon (Ar) plasma excited by a radio frequency (rf) power at 13.56 MHz. Optical emission spectra from the plasma near the Ga sputtering target had indicated that the release of Ga into plasma increased with increasing negative bias to the sputtering target. The ratio of Ga(+) current to Ar(+) current was measured to be about 1% with a quadrupole mass analyzer at 100 V extraction voltage for incident rf power as low as 30 W. Ions in the plasma were extracted through a pair of multiaperture electrodes. The homogeneity of Ga flux was examined by making a Ga deposition pattern on a glass substrate located behind the extractor electrodes. PMID:20192457

  17. Gallium ion extraction from a plasma sputter-type ion source

    SciTech Connect

    Vasquez, M. Jr.; Imakita, S.; Kasuya, T.; Wada, M.; Maeno, S.

    2010-02-15

    A broad mixed ion beam containing positive ions of gallium (Ga) was produced with a plasma sputter-type ion source. Liquid Ga was suspended on a tungsten reservoir to be sputtered and postionized in argon (Ar) plasma excited by a radio frequency (rf) power at 13.56 MHz. Optical emission spectra from the plasma near the Ga sputtering target had indicated that the release of Ga into plasma increased with increasing negative bias to the sputtering target. The ratio of Ga{sup +} current to Ar{sup +} current was measured to be about 1% with a quadrupole mass analyzer at 100 V extraction voltage for incident rf power as low as 30 W. Ions in the plasma were extracted through a pair of multiaperture electrodes. The homogeneity of Ga flux was examined by making a Ga deposition pattern on a glass substrate located behind the extractor electrodes.

  18. Solar Wind Sputtering of Lunar Soil Analogs: The Effect of Ionic Charge and Mass

    NASA Technical Reports Server (NTRS)

    Hijazi, H.; Bannister, M. E.; Meyer, F. W.; Rouleau, C. M.; Barghouty, A. F.; Rickman, D. L.; Hijazi, H.

    2014-01-01

    In this contribution we report sput-tering measurements of anorthite, an analog material representative of the lunar highlands, by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the heavier solar wind constituents), in the charge state range +1 to +9, and had a fixed solar-wind-relevant impact velocity of approximately 310 km/s or 500 eV/ amu. The goal of the measurements was to determine the sputtering contribution of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H+ fraction.

  19. Transport of sputtered particles in capacitive sputter sources

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Mussenbrock, Thomas

    2015-07-01

    The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration, the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p = 0.5 Pa. It is found that—due to the peculiar geometric conditions—the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

  20. Fabrication of boron sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1995-02-28

    A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

  1. Fabrication of boron sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1995-01-01

    A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

  2. Energy spectrum of sputtered uranium

    NASA Technical Reports Server (NTRS)

    Weller, R. A.; Tombrello, T. A.

    1977-01-01

    The fission track technique for detecting uranium 235 was used in conjunction with a mechanical time-of-flight spectrometer to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E to the -1.77 power for E is approximately greater than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the ramdom collision cascade model of sputtering.

  3. In-situ sputtering apparatus

    SciTech Connect

    Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.; Hershcovitch, Ady

    2015-06-09

    A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and a cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.

  4. Sputtering Holes with Ion Beamlets

    NASA Technical Reports Server (NTRS)

    Byers, D. C.; Banks, B. A.

    1974-01-01

    Ion beamlets of predetermined configurations are formed by shaped apertures in the screen grid of an ion thruster having a double grid accelerator system. A plate is placed downstream from the screen grid holes and attached to the accelerator grid. When the ion thruster is operated holes having the configuration of the beamlets formed by the screen grid are sputtered through the plate at the accelerator grid.

  5. Collision-spike Sputtering of Au Nanoparticles.

    PubMed

    Sandoval, Luis; Urbassek, Herbert M

    2015-12-01

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering. PMID:26245857

  6. Collision-spike sputtering of Au nanoparticles

    SciTech Connect

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.

  7. Collision-spike sputtering of Au nanoparticles

    DOE PAGESBeta

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remaindermore » is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.« less

  8. Sputtering and ion plating for aerospace applications

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1981-01-01

    Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3 dimensional coverage are the primary attributes of this technology.

  9. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A. . Inter-Faculty Reactor Inst.); Greuter, M.J.W.; Niesen, L. . Dept. of Physics); Nielsen, B.; Lynn, K.G. )

    1991-01-01

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  10. Noble gas incorporation in sputtered and ion beam assisted grown silicon films

    SciTech Connect

    van Veen, A.; Greuter, M.J.W.; Niesen, L.; Nielsen, B.; Lynn, K.G.

    1991-12-31

    Gas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self-interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

  11. Negative mass

    NASA Astrophysics Data System (ADS)

    Hammond, Richard T.

    2015-03-01

    Some physical aspects of negative mass are examined. Several unusual properties, such as the ability of negative mass to penetrate any armor, are analysed. Other surprising effects include the bizarre system of negative mass chasing positive mass, naked singularities and the violation of cosmic censorship, wormholes, and quantum mechanical results as well. In addition, a brief look into the implications for strings is given.

  12. Sputtering of silicon membranes with nanoscale thickness

    NASA Astrophysics Data System (ADS)

    Hobler, Gerhard; Nietiadi, Maureen L.; Bradley, R. Mark; Urbassek, Herbert M.

    2016-06-01

    A theoretical study of forward and backward sputtering produced by the impact of single 20 keV Ar ions on freestanding amorphous Si membranes is carried out. We use three techniques: Monte Carlo (MC) and molecular dynamics (MD) simulations, as well as analytical theory based on the Sigmund model of sputtering. We find that the analytical model provides a fair description of the simulation results if the film thickness d exceeds about 10%-30% of the mean depth of energy deposition a. In this regime, backward sputtering is nearly independent of the membrane thickness and forward sputtering shows a maximum for thicknesses d ≈a . The dependence of forward sputtering on the ion's incidence angle shows a qualitative change as a function of d: while for d ≲ a , the forward sputter yield has a maximum at oblique incidence angles, the maximum occurs at normal incidence for d ≳ a . As the membrane thickness is reduced below 0.1- 0.3 a , the theory's predictions increasingly deviate from the MC results. For example, the predicted forward sputter yield approaches a finite value but the MC result tends to zero. This behavior is interpreted in terms of energy deposition and sputtering efficiency. Near-perfect agreement is observed between the sputter yields calculated by MD and MC simulations even for the thinnest membranes studied (d = 5 Å).

  13. On the sputtering of binary compounds

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Switkowski, Z. E.

    1975-01-01

    A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations and surface binding energy. The partial yields depend non-linearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi and Cu3Au indicates that the general features are well described.

  14. Single-stranded DNA-binding proteins PURalpha and PURbeta bind to a purine-rich negative regulatory element of the alpha-myosin heavy chain gene and control transcriptional and translational regulation of the gene expression. Implications in the repression of alpha-myosin heavy chain during heart failure.

    PubMed

    Gupta, Madhu; Sueblinvong, Viranuj; Raman, Jai; Jeevanandam, Valluvan; Gupta, Mahesh P

    2003-11-01

    The alpha-myosin heavy chain is a principal molecule of the thick filament of the sarcomere, expressed primarily in cardiac myocytes. The mechanism for its cardiac-restricted expression is not yet fully understood. We previously identified a purine-rich negative regulatory (PNR) element in the first intron of the gene, which is essential for its cardiac-specific expression (Gupta, M., Zak, R., Libermann, T. A., and Gupta, M. P. (1998) Mol. Cell. Biol. 18, 7243-7258). In this study we cloned and characterized muscle and non-muscle factors that bind to this element. We show that two single-stranded DNA-binding proteins of the PUR family, PURalpha and PURbeta, which are derived from cardiac myocytes, bind to the plus strand of the PNR element. In functional assays, PURalpha and PURbeta repressed alpha-myosin heavy chain (alpha-MHC) gene expression in the presence of upstream regulatory sequences of the gene. However, from HeLa cells an Ets family of protein, Ets-related protein (ERP), binds to double-stranded PNR element. The ERP.PNR complex inhibited the activity of the basal transcription complex from homologous as well as heterologous promoters in a PNR position-independent manner, suggesting that ERP acts as a silencer of alpha-MHC gene expression in non-muscle cells. We also show that PUR proteins are capable of binding to alpha-MHC mRNA and attenuate its translational efficiency. Furthermore, we show robust expression of PUR proteins in failing hearts where alpha-MHC mRNA levels are suppressed. Together, these results reveal that (i) PUR proteins participate in transcriptional as well as translational regulation of alpha-MHC expression in cardiac myocytes and (ii) ERP may be involved in cardiac-restricted expression of the alpha-MHC gene by preventing its expression in non-muscle cells. PMID:12933792

  15. Development of sputtered techniques for thrust chambers. [coolant passage closing by triode sputtering

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Broch, J. W.; Allard, P. A.

    1976-01-01

    Procedures for closing out coolant passages in regeneratively cooled thrust chambers by triode sputtering, using post and hollow Cu-0.15 percent Zr cathodes are described. The effects of aluminum composite filler materials, substrate preparation, sputter cleaning, substrate bias current density and system geometry on closeout layer bond strength and structure are evaluated. High strength closeout layers were sputtered over aluminum fillers. The tensile strength and microstructure of continuously sputtered Cu-0.15 percent Zr deposits were determined. These continuous sputtered deposits were as thick as 0.75 cm. Tensile strengths were consistently twice as great as the strength of the material in wrought form.

  16. Dust Growth by RF Sputtering

    SciTech Connect

    Churton, B.; Samarian, A. A.; Coueedel, L.

    2008-09-07

    The effect of the dust particle growth by RF sputtering on glow discharge has been investigated. It has been found that the growth of dust particles modifies the electrical characteristics of the discharge. In particularly, the absolute value of the self-bias voltage decreases during the particle growth due to the electron losses on the dust particles. To find the correlation between the dust growth and the self bias evolution, dust particles have been collected at different times. The dust particle growth rate is found to be linear.

  17. REACTIVE SPUTTER DEPOSITION OF CHROMIUM NITRIDE COATINGS

    EPA Science Inventory

    The effect of substrate temperature and sputtering gas compositon on the structure and properties of chromium-chromium nitride films deposited on C-1040 steel using r.f. magnetron sputter deposition was investigated. X-ray diffraction analysis was used to determine the structure ...

  18. Sputter metalization of Wolter type optical elements

    NASA Technical Reports Server (NTRS)

    Ledger, A. M.

    1977-01-01

    An analytical task showed that the coating thickness distribution for both internal and external optical elements coated using either electron beam or sputter sources can be made uniform and will not affect the surface figure of coated elements. Also, sputtered samples of nickel, molybdenum, iridium and ruthenium deposited onto both hot and cold substrates showed excellent adhesion.

  19. Nanoscale growth twins in sputtered metal films

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Anderoglu, O.; Hoagland, R. G.; Misra, A.

    2008-09-01

    This article reviews recent studies on the mechanical properties of sputtered copper and 330 stainless-steel films with {111} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering, unusually high strengths, and excellent thermal stability of nanotwinned structures are highlighted.

  20. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  1. Graphene: the ultimately thin sputtering shield

    NASA Astrophysics Data System (ADS)

    Herbig, Charlotte; Michely, Thomas

    2016-06-01

    Scanning tunneling microscopy methods are applied to investigate the potential of monolayer graphene as a sputtering shield for the underlying metal substrate. To visualize the effect, a bare and a graphene protected Ir(111) surface are irradiated with 500 eV Xe+, as well as 200 eV Xe+ and Ar+ ions, all at 1000 K. By quantitatively evaluating the sputtered material from the surface vacancy island area, we find a drastic decrease in metal sputtering for the graphene protected surface. It is demonstrated that efficient sputter protection relies on self-repair of the ion damage in graphene, which takes place efficiently in the temperature range of chemical vapor deposition growth. Based on the generality of the underlying principles of ion damage, graphene self-repair, and graphene growth, we speculate that efficient sputter protection is possible for a broad range of metals and alloys.

  2. Sputter Deposition of Metallic Sponges

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2002-01-18

    Metallic films are grown with a sponge-like morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous porosity on the sub-micron scale. The stabilization of the metallic sponge is directly correlated with a limited range for the sputter deposition parameters of working gas pressure and substrate temperature. This sponge-like morphology augments the features as generally understood in the classic zone models of growth for physical vapor deposits. Nickel coatings are deposited with working gas pressures up to 4 Pa and for substrate temperatures up to 1100 K. The morphology of the deposits is examined in plan and in cross-section with scanning electron microscopy. The parametric range of gas pressure and substrate temperature (relative to absolute melt point) for the deposition processing under which the metallic sponges are produced appear universal for many metals, as for example, including gold, silver, and aluminum.

  3. Formation of cubic boron-nitride by the reactive sputter deposition of boron

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; Makowiecki, D.W.; McKeman, M.A.

    1997-03-01

    Boron-nitride films are synthesized by RF magnetron sputtering boron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Auger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and x-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bonding, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline BN phases. The deposition of stable and adherent boron nitride coatings consisting of the cubic phase requires 400 `C substrate heating and the application of a 300 V negative bias.

  4. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  5. Synthesis of sputtered thin films in low energy ion beams

    NASA Astrophysics Data System (ADS)

    Howson, R. P.

    1997-01-01

    Magnetron sputtering is a process which gives a highly energetic depositing species. The growing film can be further bombarded with ions of the heavy gas used for sputtering by directing a plasma of it onto the surface. This can be done quite simply by using an unbalanced magnetron. The immersion of an insulating or isolated substrate-film combination in this plasma leads to a self-bias of around 30 V appearing on it's surface and a bombardment of low energy ions of the sputtering gas of several milli-amps per square centimetre. If the residual gas contains a reactive component, to form a compound film, then the gas is made much more reactive and less is needed to form the stoichiometric film. This can take place in a continuously operating system made stable using partial pressure control of the reactive gas with plasma emission monitoring or something similar. It can also be operated when the process of deposition is separated in time from the process of reaction and is repeated to build the film. We have called this process successive-plasma-anodisation (SPA) and it can be achieved by mechanically transferring the substrate between two magnetrons, one to deposit the metal film and one, which is unbalanced, to provide an oxygen plasma. It can also be operated by pulsing the reactive gas under carefully controlled conditions. Examples are given of the synthesis of compound films using low energy ion bombardment with these techniques and it is demonstrated that excellent films of a large range of oxides and nitrides can be made.

  6. Sputtering erosion in ion and plasma thrusters

    NASA Astrophysics Data System (ADS)

    Ray, Pradosh K.

    1995-08-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  7. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  8. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  9. Adherence of sputtered titanium carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1979-01-01

    The study searches for interface treatment that would increase the adhesion of TiC coating to nickel- and titanium-base alloys. Rene 41 (19 wt percent Cr, 11 wt percent Mo, 3 wt percent Ti, balance Ni) and Ti-6Al-4V (6 wt percent Al, 4 wt percent V, balance Ti) are considered. Adhesion of the coatings is evaluated in pin-and disk friction tests. The coatings and interface regions are examined by X-ray photoelectron spectroscopy. Results suggest that sputtered refractory compound coatings adhere best when a mixed compound of coating and substrate metals is formed in the interfacial region. The most effective type of refractory compound interface appears to depend on both substrate and coating material. A combination of metallic interlayer deposition and mixed compound interface formation may be more effective for some substrate coating combinations than either alone.

  10. Heavy flavors

    SciTech Connect

    Cox, B.; Gilman, F.J.; Gottschalk, T.D.

    1986-11-01

    A range of issues pertaining to heavy flavors at the SSC is examined including heavy flavor production by gluon-gluon fusion and by shower evolution of gluon jets, flavor tagging, reconstruction of Higgs and W bosons, and the study of rare decays and CP violation in the B meson system. A specific detector for doing heavy flavor physics and tuned to this latter study at the SSC, the TASTER, is described. 36 refs., 10 figs.

  11. Nanoscale growth twins in sputtered metal films

    SciTech Connect

    Misra, Amit; Anderoglu, Osman; Hoagland, Richard G; Zhang, X

    2008-01-01

    We review recent studies on the mechanical properties of sputtered Cu and 330 stainless steel films with {l_brace}1 1 1{r_brace} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering and the deformation mechanisms that enable usually high strengths in nanotwinned structures are highlighted. Growth twins in sputtered films possess good thermal stability at elevated temperature, providing an approach to extend the application of high strength nanostructured metals to higher temperatures.

  12. Detection of sputtered metastable atoms by autoionization

    SciTech Connect

    Wucher, A.; Berthold, W.; Oechsner, H.; Franzreb, K.

    1994-03-01

    We report on a scheme for the detection of sputter-generated metastable atoms that is based on the resonant excitation of an autoionizing state by single-photon absorption from a tunable laser. Using this technique, sputtered silver atoms ejected in the metastable 4{ital d}{sup 9}5{ital s}{sup 2}{ital D}{sub 5/2} state with an excitation energy of 3.75 eV have been detected. This represents the highest excitation energy of sputtered metastable atoms observed so far.

  13. Composition of sputtered material from CuNi alloy during Xe + ion sputtering at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Sekine, Shigeyuki; Shimizu, Hazime; Ichimura, Singo

    1995-04-01

    Polycrystalline CuNi alloys were sputtered by 3 kV Xe + ions at elevated temperatures to analyze the ion-beam-induced diffusion. The time evolution of the composition of the sputtered materials from the start of the sputtering was measured by TOF-SNMS (time-of-flight sputtered neutral mass spectrometry). During removal of the Gibbsian segregation layer of copper, the sputtered flux consisted of almost only copper atoms. Then, the copper content gradually decreased due to the formation of a sputter-induced copper-depleted surface layer, and reached an almost steady state with still higher copper content than the bulk composition. From the temperature dependence of the composition at the quasi-steady state the activation energy of copper transportation through a high diffusivity path was derived to be 54 kJ mol -1 (0.56 eV). The high diffusivity path was assigned to copper diffusion through grain boundaries.

  14. Lifetime dependence of nitrided carbon stripper foils on sputter angle during N+ ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Sugai, I.; Oyaizu, M.; Takeda, Y.; Kawakami, H.; Kawasaki, K.; Hattori, T.; Kadono, T.

    2015-09-01

    We fabricated high-lifetime thin nitride carbon stripper (NCS) foils with high nitrogen contents using ion-beam sputtering with reactive nitrogen gas and investigated the dependence of their lifetimes on the sputter angle. The nitrogen in carbon foils plays a critical role in determining their lifetime. Therefore, in order to investigate the effects of the nitrogen level in NCS foils on foil lifetime, we measured the sputtering yield for different sputter angles at a sputtering voltage of 10 kV while using carbon-based targets. We also measured the nitrogen-to-carbon thickness ratios of the foils using Rutherford backscattering spectrometry. The foils made at a sputter angle of 15° using a glassy amorphous carbon target exhibited an average increase of 200-fold in lifetime when compared to commercially available foils.

  15. Status of the heavy ion beam probe system in the Large Helical Device.

    PubMed

    Nishiura, M; Ido, T; Shimizu, A; Nakano, H; Kato, T; Kato, S; Hamada, Y; Shevelko, V P; Janev, R K; Wada, M

    2008-02-01

    A heavy ion beam probe (HIBP) system has been installed into the Large Helical Device (LHD) to measure the spatial profile of the plasma potential and density fluctuations. The optimization of the HIBP system, especially the beam injector, is described. The negative ion beam is required for the MeV beam production in a tandem accelerator. A sputter-type heavy negative ion source has been developed as an intense Au(-) beam source to produce Au(+) beams with energy in the MeV range. The extraction electrodes and the Einzel lens system of the ion source have been designed taking into account the beam optics, and installed into the real machine. Throughout the plasma diagnostics on LHD experiments, the consumptions of vaporized caesium and gold target are being characterized for practical operations. In addition, the experimental charge fractions are compared with the theoretical fractions for understanding the charge-changing behavior of Au(-) ions and optimizing the fraction of Au(+) ions at the exit of the tandem accelerator of the HIBP system. PMID:18315266

  16. Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S.; George, M. A.

    1999-01-01

    ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation.

  17. Morphology and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.

    1999-01-01

    ZnO is a wide-band-gap oxide material that has many applications. A new potential application of ZnO material is for light emitting devices since its structure and electrical properties are similar to that of the GaN material (a blue laser candidate). It also is a good substrate for fabricating GaN-based devices. Off-axis sputtering technique has revealed great potential in synthesizing excellent oxide materials because the negative ion bombardment is greatly reduced when adatoms condense on substrates. The surface of films grown by off-axis sputtering will be much smoother than that produced in a regular sputtering configuration. A growth mechanism is studied by investigating the morphology and structure of ZnO films under different growth conditions and orientations. ZnO films are deposited on (0001) sapphire and quartz substrates by off- axis sputtering deposition at various oxygen/argon mixture ratios and pressures and at different temperatures. All films reveal highly textured structures on quartz substrates and epitaxial growth on sapphire substrates. Two off-axis configurations, vertical and horizontal orientations are conducted to study the process of film growth, surface morphology, and film structure. X-ray diffraction, scanning probe microscopy, and electrical measurements are used to characterize these films. Detailed results will be discussed in the presentation. Keywords: ZnO, Photonic material, Off-axis sputtering, Growth mechanism

  18. Corrosion Behaviour of Sputtered Alumina Thin Films

    NASA Astrophysics Data System (ADS)

    Reddy, I. Neelakanta; Dey, Arjun; Sridhara, N.; Anoop, S.; Bera, Parthasarathi; Rani, R. Uma; Anandan, Chinnasamy; Sharma, Anand Kumar

    2015-10-01

    Corrosion studies of sputtered alumina thin films grown on stainless steel (SS) 304 were carried out by linear polarization and electrochemical impedance spectroscopy. Noticeable changes were not observed in morphology and surface roughness of films after carrying out the corrosion test. Corrosion current density (icorr) of alumina coated SS decreased up to 10-10 A cm-2 while icorr value in the range of 10-5-10-6 A cm-2 was observed for bare SS. The direct sputtered film showed superior corrosion resistance behaviour than the reactive sputtered film. This might be attributed to the difference in thickness of the films sputtered by direct and reactive methods. The electronic structure of deposited alumina films was studied both before and after corrosion test by X-ray photoelectron spectroscopy technique which also confirmed no structural changes of alumina film after exposing it to corrosive environment.

  19. High temperature, bonded titanium diboride sputter target

    SciTech Connect

    Hale, G.J.; Gates, W.G.

    1981-10-01

    A high-temperature bonding technique has been employed in the development of an improved sputter deposition target for hard, crack-prone materials such as titanium diboride (TiB/sub 2/). Titanium diboride was bonded to a thin metal backing plate, both materials having a similar linear coefficient of thermal expansion (LCTE) using a high-temperature braze alloy. The thin metal backing plate helps stabilize the movement of the target material during the sputter deposition operation. The bonded sputter target has a useable life of 50 to 75 times that of a unbonded target. This bonding technique may be used on a variety of hard, brittle, crack-prone, sputterable materials (including metal oxides, carbides borides, and nitrides). US Patent 4,209,375 has been issued as a result of this endeavor.

  20. Large Area Sputter Coating on Glass

    NASA Astrophysics Data System (ADS)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  1. Sputtering of sodium on the planet Mercury

    NASA Technical Reports Server (NTRS)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  2. Analysis of DC magnetron sputtered beryllium films

    SciTech Connect

    Price, C.W.; Hsieh, E.J.; Lindsey, E.F.; Pierce, E.L.; Norberg, J.C.

    1988-10-01

    We are evaluating techniques that alter the columnar grain structure in sputtered beryllium films on fused silica substrates. The films are formed by DC magnetron sputtering, and the columnar structure, which is characteristic of this and most other deposition techniques, is highly detrimental to the tensile strength of the films. Attempts to modify the columnar structure by using RF-biased sputtering combined with nitrogen pulsing have been successful, and this paper describes the analyses of these films. Sputtered beryllium films are quite brittle, and the columnar structure in particular tends to form a distinct intergranular fracture; therefore, the grain structure was analyzed in fractured specimens using the high-resolution capability of a scanning electron microscope (SEM) equipped with a field emission gun (FESEM). Ion microanalysis using secondary-ion mass spectroscopy (SIMS) was conducted on some specimens to determining relative contamination levels introduced by nitrogen pulsing. The capability to perform quantitative SIMS analyses using ion-implanted specimens as standards also is being developed. This work confirms that the structure of DC magnetron sputtered beryllium can be improved significantly with combined nitrogen pulsing and RF-biased sputtering. 8 refs.

  3. Anisotropy of sapphire single crystal sputtering

    SciTech Connect

    Minnebaev, K. F.; Tolpin, K. A.; Yurasova, V. E.

    2015-08-15

    We have studied the spatial distribution of particles sputtered from the base (0001) plane of a sapphire single crystal with trigonal crystalline lattice (α-Al{sub 2}O{sub 3}) that can be considered a superposition of two hexagonal close packed (hcp) structures–the ideal sublattice of oxygen and a somewhat deformed sublattice of aluminum. It is established that the particles sputtered from the base plane of sapphire are predominantly deposited along the sides of an irregular hexagon with spots at its vertices. The patterns of spots have been also studied for sputtering of particles from the (0001) face of a zinc single crystal with the hcp lattice. The spots of sputtered Zn atoms are arranged at the vertices of concentric equilateral hexagons. In both cases, the observed anisotropy of sputtering is related to focused collisions (direct and assisted focusing) and the channeling process. The chemical composition of spots has been determined in various regions of sputtered sapphire deposition. The results are discussed in comparison to analogous earlier data for secondary ion emission from an α-Al{sub 2}O{sub 3} single crystal.

  4. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  5. Chemical Sputtering Studies of Lithiated Graphite

    NASA Astrophysics Data System (ADS)

    Raman, Priya; Groll, Andrew; Abrams, Tyler; Curreli, Davide; Andruczyk, Daniel; Ruzic, D. N.

    2012-10-01

    Lithium treatments in the National Spherical Torus Experiment have shown dramatic improvements in plasma performance. In order to understand the complex system of lithiated ATJ graphite, chemical sputtering measurements of plain and lithiated ATJ graphite are conducted in IIAX (Ion Surface Interaction Experiment) facility with a differentially pumped Magnetic Sector Residual Gas Analyzer (MSRGA). The ATJ graphite target is mounted in such way that the target can be translated along a line to different positions to get direct comparison of ATJ and lithiated ATJ. Target is heated using joule heating and is connected to a biasing circuitry. Chemical sputtering of graphite is dependent on the ion energy and substrate temperature, hence the total effects of treating ATJ graphite with lithium in hydrogen plasma is investigated in terms of different target temperatures and bias voltages. For this purpose, lithium is evaporated in-situ onto ATJ graphite and chemically sputtered species in hydrogen plasma is measured using MSRGA. The dominant chemical sputtering product is CH4. It was found that lithium treatments have suppressed the chemical sputtering of ATJ Graphite. The suppression of chemical sputtering effect is presented as a function of varying lithium thickness on ATJ Graphite.

  6. Contamination by sputtering in mirror field electron cyclotron resonance microwave plasma sources

    SciTech Connect

    Gorbatkin, S.M.; Berry, L.A. )

    1992-09-01

    Langmuir probe measurements, visual observation, and Rutherford backscattering spectrometry have been used to investigate source chamber sputtering for electron cyclotron resonance plasma systems operated with Ar, N{sub 2}, and Cl{sub 2}. Potentials in the source {gt}20 eV combined with high plasma densities ({approx gt}10{sup 12} cm{sup {minus}3}) led to source chamber sputtering and coating of the microwave entrance window. The microwave entrance window coating caused significant absorption of incident microwave power and decreased source efficiency by as much as 50% within 5 min. Operation of the source with an anodized aluminum liner was effective in reducing microwave entrance window coating but resulted in some heavy metal contamination due to sputtering of impurities in the liner itself. Also, checks with secondary ion mass spectrometry indicated some Al contamination from sputtering of the anodized aluminum liner material. Finally, a technique for {ital in} {ital situ} cleaning of the microwave entrance window was developed and is described in detail.

  7. Ionization phenomena and sources of negative ions

    SciTech Connect

    Alton, G.D.

    1983-01-01

    Negative ion source technology has rapidly advanced during the past several years as a direct consequence of the discovery of Krohn that negative ion yields can be greatly enhanced by sputtering in the presence of Group IA elements. Today, most negative ion sources use this discovery directly or the principles implied to effect negative ion formation through surface ionization. As a consequence, the more traditional direct extraction plasma and charge exchange sources are being used less frequently. However, the charge exchange generation mechanism appears to be as universal, is very competitive in terms of efficiency and has the advantage in terms of metastable ion formation. In this review, an attempt has been made to briefly describe the principal processes involved in negative ion formation and sources which are representative of a particular principle. The reader is referred to the literature for specific details concerning the operational characteristics, emittances, brightnesses, species and intensity capabilities of particular sources. 100 references.

  8. Analysis of surface sputtering on a quantum statistical basis

    NASA Technical Reports Server (NTRS)

    Wilhelm, H. E.

    1975-01-01

    Surface sputtering is explained theoretically by means of a 3-body sputtering mechanism involving the ion and two surface atoms of the solid. By means of quantum-statistical mechanics, a formula for the sputtering ratio S(E) is derived from first principles. The theoretical sputtering rate S(E) was found experimentally to be proportional to the square of the difference between incident ion energy and the threshold energy for sputtering of surface atoms at low ion energies. Extrapolation of the theoretical sputtering formula to larger ion energies indicates that S(E) reaches a saturation value and finally decreases at high ion energies. The theoretical sputtering ratios S(E) for wolfram, tantalum, and molybdenum are compared with the corresponding experimental sputtering curves in the low energy region from threshold sputtering energy to 120 eV above the respective threshold energy. Theory and experiment are shown to be in good agreement.

  9. Sputtered coatings for microfluidic applications

    SciTech Connect

    Matson, Dean W.; Martin, Peter M.; Bennett, Wendy D.; Johnston, John W.; Stewart, Donald C.; Bonham, Charles C.

    2000-07-01

    Magnetron sputter-deposited features and coatings are finding a broad range of uses in microfluidic devices being developed at the Pacific Northwest National Laboratory. Such features are routinely incorporated into multilayer laminated microfluidic components where specific functionality is required, and where other methods for producing these features have been deemed unacceptable. Applications include electrochemical sensors, heaters and temperature probes, electrical leads and insulation layers, piezoelectric actuators and transducers, and chemical modification of surfaces. Small features, such as those required for the production of microsensor electrodes or miniature resistive heaters on microfluidic chips, were patterned using standard lithographic methods, or with masks produced by laser micromachining processes. Thin-film piezoelectric materials such as aluminum nitride have been deposited at low temperatures for use with temperature sensitive materials. Use of the coating technology and its application in the fabrication of specific microfluidic devices, including a groundwater sensor, miniature piezoelectric ultrasonic transducers and actuators, a polymerase chain reaction thermal cycler, and a microchannel flow diagnostic device, are discussed. Technical issues associated with these coatings, such as adhesion, chemical resistance, and surface defects are also addressed. (c) 2000 American Vacuum Society.

  10. Structural and morphological properties of sputtered NiO thin films at various sputtering pressures

    SciTech Connect

    Reddy, A. Mallikarjuna; Reddy, Y. Ashok Kumar; Reddy, A. Sivasankar; Reddy, P. Sreedhara

    2012-06-05

    Nickel oxide thin films were successfully deposited on glass substrates at different sputtering pressures in the range of 3 x 10{sup -2} to 5 x 10{sup -2} mbar. It was observed that sputtering pressure influenced the structural and morphological properties. Structural properties were studied with X-ray diffractometer. All the deposited films were polycrystalline and exhibited cubic structure with preferential growth along (220) plane. From morphological studies it was observed that fine and uniform grains with RMS roughness of 9.4 nm were obtained when the films deposited at a sputtering pressure of 4 x 10{sup -2} mbar,. The grain size and the surface roughness decreased at higher sputtering pressures. The surface mobility of the adatoms decreased after series of collisions resulting in the decrease of grain size at high sputtering pressures.

  11. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  12. Molecular dynamics investigation of hexagonal boron nitride sputtering and sputtered particle characteristics

    NASA Astrophysics Data System (ADS)

    Smith, Brandon D.; Boyd, Iain D.

    2016-08-01

    The sputtering of hexagonal boron nitride (h-BN) by impacts of energetic xenon ions is investigated using a molecular dynamics (MD) model. The model is implemented within an open-source MD framework that utilizes graphics processing units to accelerate its calculations, allowing the sputtering process to be studied in much greater detail than has been feasible in the past. Integrated sputter yields are computed over a range of ion energies from 20 eV to 300 eV, and incidence angles from 0° to 75°. Sputtering of boron is shown to occur at energies as low as 40 eV at normal incidence, and sputtering of nitrogen at as low as 30 eV at normal incidence, suggesting a threshold energy between 20 eV and 40 eV. The sputter yields at 0° incidence are compared to existing experimental data and are shown to agree well over the range of ion energies investigated. The semi-empirical Bohdansky curve and an empirical exponential function are fit to the data at normal incidence, and the threshold energy for sputtering is calculated from the Bohdansky curve fit as 35 ± 2 eV. These results are shown to compare well with experimental observations that the threshold energy lies between 20 eV and 40 eV. It is demonstrated that h-BN sputters predominantly as atomic boron and diatomic nitrogen, and the velocity distribution function (VDF) of sputtered boron atoms is investigated. The calculated VDFs are found to reproduce the Sigmund-Thompson distribution predicted by Sigmund's linear cascade theory of sputtering. The average surface binding energy computed from Sigmund-Thompson curve fits is found to be 4.5 eV for ion energies of 100 eV and greater. This compares well to the value of 4.8 eV determined from independent experiments.

  13. Surface sticking probabilities for sputtered atoms of Nb-93 and Rh-103

    NASA Technical Reports Server (NTRS)

    Weller, M. R.; Tombrello, T. A.

    1979-01-01

    The capture coefficient probabilities for sputtered atoms of Nb-93 and Rh-103 incident on Al2O3 surfaces were measured using the backscattering of MeV heavy ions. In the circumstance where the collecting surface is thickly covered, the sticking probabilities integrated over the energy distribution of sputtered atoms are 0.97 plus or minus 0.01 for Nb-93 and 0.95 plus or minus 0.01 for Rh-103 respectively. In the limit of negligible areal coverage of the collector, the accuracy is less; in this case the sticking probabilities are 0.97 + 0.03 or -0.08 and 0.95 + 0.05 or -0.08.

  14. In-situ sputtering of YBCO films for microwave applications

    NASA Technical Reports Server (NTRS)

    Ballentine, P. H.; Kadin, A. M.; Mallory, D. S.

    1991-01-01

    RF magnetron sputtering from a single YBCO target onto a heated substrate (700 C) was used to obtain c-axis-oriented 1-2-3 films that are superconducting without a subsequent annealing or oxygenation step, with Tc(R = 0) as high as 88 K on MgO and LaAlO3 substrates. This process uses an 8-in-diameter target in the sputter-up configuration, with a central grounded shield to eliminate negative ion bombardment. It can reproducibly and uniformly cover substrates as large as 3-in across at rates exceeding 1 A/s. Maintaining film composition very close to stoichiometry is essential for obtaining films with good superconducting properties and surface morphology. Optimum films have critical currents of 1 MA/sq cm at 77 K. Measurements of microwave surface resistance based on a stripline resonator indicate low surface resistance for unpatterned YBCO ground planes, but excess loss and a strong power dependence in a patterned center strip.

  15. Sputtering properties of tungsten 'fuzzy' surfaces

    NASA Astrophysics Data System (ADS)

    Nishijima, D.; Baldwin, M. J.; Doerner, R. P.; Yu, J. H.

    2011-08-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Yfuzzy, decreases with increasing fuzzy layer thickness, L, and saturates at ˜10% of that of a smooth surface, Ysmooth, at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Yfuzzy/Ysmooth follows (1 - pfuzz), where pfuzz is the fuzz porosity. Further, Yfuzzy/Ysmooth is observed to increase with incident ion energy, Ei. This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower Ei, the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower Ei butterfly distributions, resulting in lower ratio of Yfuzzy/Ysmooth.

  16. Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering

    NASA Astrophysics Data System (ADS)

    Kitayama, T.; Morita, Y.; Nakajima, K.; Narumi, K.; Saitoh, Y.; Matsuda, M.; Sataka, M.; Toulemonde, M.; Kimura, K.

    2015-12-01

    Amorphous silicon nitride films (thickness 30 nm) deposited on Si(0 0 1) were irradiated with 30-1080 keV C60 and 100 MeV Xe ions to fluences ranging from 2 × 1011 to 1 × 1014 ions/cm2. The composition depth profiles of the irradiated samples were measured using high-resolution Rutherford backscattering spectrometry. The sputtering yields were estimated from the derived composition profiles. Pronounced preferential sputtering of nitrogen was observed in the electronic energy loss regime. In addition, a large synergy effect between the electronic and collisional sputtering was also observed. The sputtering yields were calculated using the unified thermal spike model to understand the observed results. Although the calculated results reproduced the observed total sputtering yields with a lowered sublimation energy, the observed preferential sputtering of nitrogen could not be explained. The present results suggest an additional sputtering mechanism related to the electronic energy loss.

  17. Adhesion strength of sputtered TiAlN-coated WC insert tool

    NASA Astrophysics Data System (ADS)

    Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

    2013-09-01

    The adhesion strength of TiAlN coating that deposited by using DC magnetron sputtering on WC insert tool are studied. TiAlN coating are deposited on Tungsten Carbide (WC) insert tool by varying negatively substrate bias from 79 to 221 volt and nitrogen flow rate from 30 to 72 sccm. The adhesion strength are obtained by using Rockwell indentation test method with a Brale diamond at applied load of 60,100 and 150 kgf. The lateral diameter of indentation is plotted on three different applied loads and the adhesion strength of TiAlN coating was obtained from the curved slopes at 100 and 150 kgf. The lower curve slop indicated better adhesion strength. The results shows that the adhesion strength of sputterred TiAlN coating tend to increase as the negatively substrate bias and nitrogen flow rate are increased.

  18. Adhesion strength of sputtered TiAlN-coated WC insert tool

    SciTech Connect

    Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

    2013-09-09

    The adhesion strength of TiAlN coating that deposited by using DC magnetron sputtering on WC insert tool are studied. TiAlN coating are deposited on Tungsten Carbide (WC) insert tool by varying negatively substrate bias from 79 to 221 volt and nitrogen flow rate from 30 to 72 sccm. The adhesion strength are obtained by using Rockwell indentation test method with a Brale diamond at applied load of 60,100 and 150 kgf. The lateral diameter of indentation is plotted on three different applied loads and the adhesion strength of TiAlN coating was obtained from the curved slopes at 100 and 150 kgf. The lower curve slop indicated better adhesion strength. The results shows that the adhesion strength of sputterred TiAlN coating tend to increase as the negatively substrate bias and nitrogen flow rate are increased.

  19. Ion-beam sputtering increases solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, R. R.

    1977-01-01

    Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

  20. Physical sputtering of metallic systems by charged-particle impact

    SciTech Connect

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs.

  1. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957-hour test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especialy at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  2. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  3. CME impact on Mercury's sputtered exospheric environment

    NASA Astrophysics Data System (ADS)

    Pfleger, M.; Lichtenegger, H. I. M.; Lammer, H.; Mura, A.; Wurz, P.; Martin-Fernandez, J. A.

    2013-09-01

    Solar wind and magnetospheric plasma precipitation onto the surface of Mercury triggers the formation of exospheric particle populations by sputtering processes. Numerical modeling of Mercury's magnetosphere has shown that the weak intrinsic magnetic field of the planet is sufficient to prevent the equatorial regions from being impacted by solar wind ions during moderate solar wind conditions. However, intense fluxes of protons are expected to hit the auroral regions, giving rise to the release of surface elements at high latitudes by ion sputtering. During high solar wind dynamic pressure conditions in the case of CME events, the solar wind protons will have access to Mercury's entire dayside surface, which may result in a considerable filling of the exosphere by sputtered surface material.

  4. Fundamental Study of Boron Carbide Sputtering

    NASA Astrophysics Data System (ADS)

    Karki, Sudarshan; Yeoun, Dae; Janjua, Saad; Driver, Marcus; Caruso, Anthony

    2009-03-01

    Boron-rich carbides belong to a special class of solids whose main structural unit is the twelve atom icosahedra. When depositing thin films of boron carbide (nominally B4C) by RF or pulsed DC magnetron sputtering, the individual sputtered or ablated cluster size and the temperature of the substrate to which the clusters adsorb to form the film, greatly affects the bulk film physical and electronic structure. This talk will present mass spectrometry data of the target clusters as a function of RF power, DC bias and chamber pressure toward the goal of modeling and understanding how the icosahedral based boron-rich materials sputter and the resultant control over the final film properties. Argon trapped into the film during the deposition as determined by X-Ray photoemission will also be discussed.

  5. Intergalactic medium metal enrichment through dust sputtering

    NASA Astrophysics Data System (ADS)

    Bianchi, Simone; Ferrara, Andrea

    2005-04-01

    We study the motion of dust grains into the intergalactic medium (IGM) around redshift z= 3, to test the hypothesis that grains can efficiently pollute the gas with metals through sputtering. We use the results available in the literature for radiation-driven dust ejection from galaxies as initial conditions and follow the motion onwards. Via this mechanism, grains are ejected into the IGM with velocities >100 km s-1 as they move supersonically, grains can be efficiently eroded by non-thermal sputtering. However, Coulomb and collisional drag forces effectively reduce the charged grain velocity. Up-to-date sputtering yields for graphite and silicate (olivine) grains have been derived using the code TRANSPORT OF IONS IN MATTER (TRIM), for which we provide analytic fits. After training our method on a homogeneous density case, we analyse the grain motion and sputtering in the IGM density field as derived from a Λ cold dark matter (CDM) cosmological simulation at z= 3.27. We found that only large (a>~ 0.1μm) grains can travel up to considerable distances (few ×100 kpc physical) before being stopped. Resulting metallicities show a well-defined trend with overdensity δ. The maximum metallicities are reached for 10 < δ < 100[corresponding to systems, in quasi-stellar object (QSO) absorption spectra, with 14.5 < log N(HI) < 16]. However the distribution of sputtered metals is very inhomogeneous, with only a small fraction of the IGM volume polluted by dust sputtering (filling factors of 18 per cent for Si and 6 per cent for C). For the adopted size distribution, grains are never completely destroyed; nevertheless, the extinction and gas photoelectric heating effects resulting from this population of intergalactic grains are well below current detection limits.

  6. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  7. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  8. Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

    NASA Astrophysics Data System (ADS)

    Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

    2013-12-01

    Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

  9. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  10. Carbonaceous Particles Production in a Sputtering Discharge

    SciTech Connect

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-10-31

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms.

  11. Magnetospheric Sputtering Source of the Moon's Exosphere

    NASA Astrophysics Data System (ADS)

    Moore, L. E.; Wilson, J. K.; Mendillo, M.

    2002-09-01

    Observations of lunar eclipses over the past decade have revealed that the Moon's transient sodium atmosphere at full Moon is both denser and more extended near equinox than it is near solstice. This fact suggests the presence of a variable magnetospheric source of sodium. An investigation of this source is carried out by modeling combinations of two sources: a constant source from micrometeor sputtering and photon-stimulated desorption, and a variable source (presumably plasma sputtering), which is higher during equinox conditions and lower during solstice conditions.

  12. Sputtering of dimers off a silicon surface

    NASA Astrophysics Data System (ADS)

    Nietiadi, Maureen L.; Rosandi, Yudi; Kopnarski, Michael; Urbassek, Herbert M.

    2012-10-01

    We present experimental and molecular-dynamics simulation results of the sputtering of a Si surface by 2 keV Ar ions. Results on both the monomer and dimer distributions are presented. In simulation, these distributions follow a generalized Thompson law with power exponent n=2 and n=3, respectively. The experimental data, obtained via plasma post-ionization in an SNMS (secondary neutral mass spectrometry) apparatus, show good agreement with respect to the dimer fraction, and the relative energy distributions of dimers and monomers. The consequences for the dimer sputtering mechanism are discussed.

  13. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  14. Temperature measurement of sputtered metal dimers

    SciTech Connect

    Fayet, P.; Wolf, J.P.; Woeste, L.

    1986-05-15

    The temperatures of sputtered alkali-metal dimers have been measured using one- and two-photon ionization spectroscopy. They are estimated to be 1470 +- 300 K, 1025 +- 200 K, and 1000 +- 200 K for Cs/sub 2/, K/sub 2/, and Na/sub 2/, respectively. The vibrational and rotational temperatures are found to be very similar. No dependence of the dimer excitation is found, neither on target temperature nor on the primary-ion energy. The results are compared with some currently used models to explain cluster formation in sputtering experiments.

  15. The friction and wear properties of sputtered hard refractory compounds

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.

    1978-01-01

    Several refractory silicide, boride, and carbide coatings were examined. The coatings were applied to type 440C steel surfaces by radio-frequency sputtering. The friction and wear properties of the coatings were found to be related to stoichiometry and impurity content of the bulk coating as well as the degree of interfacial adherence between coating and substrate. Bulk coating stoichiometry could to a large extent be controlled by the application of a negative bias voltage during deposition. Adherence was promoted by the formation of an oxidized layer at the interface. Deliberate preoxidizing of the 440C produced enhanced adherence for many compounds which are related to the formation of a mixed oxide transition region.

  16. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  17. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  18. On the phase formation of sputtered hafnium oxide and oxynitride films

    NASA Astrophysics Data System (ADS)

    Sarakinos, K.; Music, D.; Mráz, S.; to Baben, M.; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.; Schneider, J. M.

    2010-07-01

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O2-N2 atmosphere. It is shown that the presence of N2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O- ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O- ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O- ion flux without N2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO2 is independent from the O- bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO2 crystal structure at the expense of the monoclinic HfO2 one.

  19. On the phase formation of sputtered hafnium oxide and oxynitride films

    SciTech Connect

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-07-15

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

  20. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  1. Anorthite sputtering by H+ and Arq+ (q = 1-9) at solar wind velocities

    SciTech Connect

    Hijazi, Hussein Dib; Bannister, Mark E.; Meyer, III, Harry M.; Rouleau, Christopher M.; Barghouty, A. F.; Rickman, D. L.; Meyer, Fred W.

    2014-10-16

    Here, we report sputtering measurements of anorthite-like material, taken to be representative of soils found in the lunar highlands, impacted by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the nonreactive heavy solar wind constituents), in the charge state range +1 to +9, at fixed solar wind-relevant impact velocities of 165 and 310 km/s (0.25 keV/amu and 0.5 keV/amu). A quartz microbalance approach (QCM) for determination of total sputtering yields was used. The goal of the measurements was to determine the sputtering contribution of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H+ fraction. The QCM results show a yield increase of a factor of about 80 for Ar+ versus H+ sputtering and an enhancement by a factor of 1.67 between Ar9+ and Ar+, which is a clear indication of a potential sputtering effect.

  2. Magnetron Sputtering Deposits Corrosion-Resistant Alloy

    NASA Technical Reports Server (NTRS)

    Khanna, S. K.; Thakoor, A. P.; Williams, R. M.

    1986-01-01

    Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.

  3. RF Sputtering of Gold Contacts On Niobium

    NASA Technical Reports Server (NTRS)

    Barr, D. W.

    1983-01-01

    Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

  4. Surface segregation during alloy sputtering and implantation

    NASA Astrophysics Data System (ADS)

    Andersen, Hans Henrik; Stenum, Bjarne; Sørensen, Tom; Whitlow, Harry J.

    1983-05-01

    The angular distribution of material sputtered from a two-component system carries information on concentration gradients close to the target surface. The surface layer will preferentially reduce that part of the flux from deeper layers, which exits from the target at angles far away from the surface normal. If a concentration gradient exists the element being depleted from the very surface will hence be emitted with a more forward-pointed angular distribution than that of the component in which the surface is enriched. An earlier setup for measurements of differential angular distributions has been improved to give higher sensitivity and reproducibility of measurement. The sputtered material is collected on cylindrically mounted thin carbon collectors and analysed with Rutherford backscattering. The setup has been used to investigate surface segregation in sputtered and ion-implanted alloys. Copper targets implanted to saturation with 45 keV Bi + at 77 K are found to have weak copper segregation at the surface. Alloy samples sputtered with argon at energies higher than 20 keV are found to have the weaker-bound component segregated to the surface (Ag from AgAu, Cu from CuPt, Au from Cu 3Au, Pd from Ni 5Pd, and Ni from NiPt) even at 77 K, where thermal segregation is usually prohibited. The segregated component is exactly the one in which the surfaces are usually assumed to be depleted of due to preferential sputtering. Chemical driving forces may be utilized to invert the segregation. For example oxygen will drive Ni to the surface instead of Pd from a Ni 5Pd sample.

  5. Moon originating heavy ions associated with CIR

    NASA Astrophysics Data System (ADS)

    Saito, Yoshifumi; Yokota, Shoichiro; Nishino, Masaki; Tsunakawa, Hideo

    2014-05-01

    Existance of a tenuous alkali atmosphere around the Moon was discovered by ground-based optical observations in 1980s. Since then the generation mechanism of the alkali atmosphere has been actively investigated. Currently, photon-stimulated desorption is regarded as the major generation process of the lunar alkai atmosphere such as sodium and potassium. MAP-PACE-IMA on Kaguya found four typical ion populations on the dayside of the Moon. These includes (1) solar wind protons backscattered at the lunar surface, (2) solar wind protons reflected by magnetic anomalies on the lunar surface, (3) reflected/backscattered protons picked-up by the solar wind, and (4) ions originating from the lunar surface/lunar exosphere. One of these populations: (4) ions originating from the lunar surface/lunar exosphere usually consisted of heavy ions such as carbon, oxygen, sodium, and potassium. Some of these ions were generated on the lunar surface by photon-stimulated desorption especially for alkali ions such as sodium and potassium and some others were generated by solar wind sputtering. Photo-ionized neutral particles were also included in these ions. These heavy ions were accelerated by the solar wind convection electric field and detected by the ion energy mass spectrometer MAP-PACE-IMA on Kaguya. Since the gyro-radius of these heavy ions was much larger than the Moon, the energy of these ions detected at 100km altitude was in most cases lower than the incident solar wind ion energy. Two special examples were found where the energy of the heavy ions was higher than the incident solar wind ion energy. These high-energy heavy ions were observed on the dayside of the Moon when CIR (Corotating Interaction Region) passed the Moon. The high energy heavy ions were observed for several hours with the highest heavy ion flux observed when the solar wind pressure increased due to the passage of the CIR. The mass spectrum of the heavy ions observed associated with CIR showed H+, He++, He

  6. Polarized negative ions

    SciTech Connect

    Haeberli, W.

    1981-04-01

    This paper presents a survey of methods, commonly in use or under development, to produce beams of polarized negative ions for injection into accelerators. A short summary recalls how the hyperfine interaction is used to obtain nuclear polarization in beams of atoms. Atomic-beam sources for light ions are discussed. If the best presently known techniques are incorporated in all stages of the source, polarized H/sup -/ and D/sup -/ beams in excess of 10 ..mu..A can probably be achieved. Production of polarized ions from fast (keV) beams of polarized atoms is treated separately for atoms in the H(25) excited state (Lamb-Shift source) and atoms in the H(1S) ground state. The negative ion beam from Lamb-Shift sources has reached a plateau just above 1 ..mu..A, but this beam current is adequate for many applications and the somewhat lower beam current is compensated by other desirable characteristics. Sources using fast polarized ground state atoms are in a stage of intense development. The next sections summarize production of polarized heavy ions by the atomic beam method, which is well established, and by optical pumping, which has recently been demonstrated to yield very large nuclear polarization. A short discussion of proposed ion sources for polarized /sup 3/He/sup -/ ions is followed by some concluding remarks.

  7. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  8. An exploratory study of recycled sputtering and CsF2- current enhancement for AMS

    NASA Astrophysics Data System (ADS)

    Zhao, X.-L.; Charles, C. R. J.; Cornett, R. J.; Kieser, W. E.; MacDonald, C.; Kazi, Z.; St-Jean, N.

    2016-01-01

    The analysis of 135Cs/Cs ratios at levels below 10-12 by accelerator mass spectrometry (AMS) would preferably use commonly available negative ion injection systems. The sputter ion sources in these injectors should ideally produce currents of Cs- or Cs-containing molecular anions approaching μA levels from targets containing mg quantities of Cs. However, since Cs is the most electro-positive stable element in nature with a low electron affinity, the generation of large negative atomic, or molecular beams containing Cs, has been very challenging. In addition, the reduction of the interferences from the 135Ba isobar and the primary 133Cs+ beam used for sputtering are also necessary. The measurement of a wide range of the isotope ratios also requires the ion source memory of previous samples be minimized. This paper describes some progresses towards a potential solution of all these problems by recycled sputtering using fluorinating targets of PbF2 with mg CsF mixed in. The problems encountered indicate that considerable further studies and some redesign of the present ion sources will be desirable.

  9. Comparison of laser ablation and sputter desorption of clusters from Au7Cu5Al4

    NASA Astrophysics Data System (ADS)

    King, B. V.; Moore, J. F.; Cui, Y.; Veryovkin, I. V.; Tripa, C. E.

    2014-12-01

    Ionized and neutral clusters were desorbed from spangold, a polycrystalline ternary alloy with composition Au7Cu5Al4, using both a femtosecond laser beam and an energetic ion beam and the resulting time of flight mass spectra compared. Neutral clusters containing up to 7 atoms were ejected by the 15 keV Ar+ beam whereas only smaller positively and negatively charged clusters were observed from the laser ablated spangold surface. Laser ionization mass spectrometry (LIMS) positive ion spectra were dominated by Al containing cluster ions whereas Au containing ions dominated the negative LIMS spectrum. An odd-even variation in LIMS cluster yield was observed, consistent with previous results and due to fragmentation of photoionized clusters. The laser sputtered neutral mass spectrometry (laser SNMS) spectrum showed that larger desorbed clusters were gold rich. The cluster signals also followed a power law dependence with cluster size with the exponent value of 6-7.6 for sputtered mixed clusters being greater than that found from sputtering of pure elements, similar to the result found previously in the Cu-Au system.

  10. Heavy-ion induced electronic desorption of gas from metals

    SciTech Connect

    Molvik, A W; Kollmus, H; Mahner, E; Covo, M K; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Kramer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

    2006-12-19

    During heavy ion operation in several particle accelerators world-wide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion induced gas desorption scales with the electronic energy loss (dE{sub e}/d/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

  11. Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction

    SciTech Connect

    Vasquez, M. Jr.; Kasuya, T.; Wada, M.; Maeno, S.; Miyamoto, N.

    2011-01-07

    Low-energy ions of gallium (Ga) and argon (Ar) were extracted from a plasma sputter-type ion source system that utilized a tungsten (W) wire extractor geometry. The 90% transparent W wire extractor configuration had shown that the system was capable of producing an ion beam with the energy as low as 10 eV in a dc filament discharge and 50 eV in a radio frequency (rf) excited system. In the present investigation, Ar plasma was sustained in an ion source chamber through an inductively coupled 13.56 MHz rf power source. Negatively biased liquid Ga target suspended on a W reservoir was sputtered and postionized prior to extraction. Mass spectral analyses revealed a strong dependence of the Ga{sup +} current on the induced target bias.

  12. Critical currents in sputtered copper molybdenum sulphide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Woollam, J. A.; Kammerdiner, L.; Luo, H.-L.

    1977-01-01

    Critical currents in a sputtered Chevrel-phase copper molybdenum sulfide have been measured at 4.2 K as a function of applied magnetic field. Self-field critical-current values up to 10 to the 9th A/sq m were found, decreasing to 10 to the 8th A/sq m at 3 T. Graphs of pinning forces versus field were found to be independent of field direction, and the pinning mechanism is sample independent. Critical-current densities for sputtered lead molybdenum sulphide are estimated to be about 10 to the 8th A/sq m at 26 T based on a scaling law for pinning.

  13. Minimization of the negative influence on the biosphere in heavy oil extraction and ecologically clean technology for the injection of the steam with supercritical parameters in oil strata on the basis of new ecologically clean tubing pipes with heat-resistant coatings

    NASA Astrophysics Data System (ADS)

    Komkov, M. A.; Moiseev, V. A.; Tarasov, V. A.; Timofeev, M. P.

    2015-12-01

    Some ecological problems related to heavy-oil extraction and ways for minimizing the negative impacts of this process on the biosphere are discussed. The ecological hazard of, for example, frequently used multistage hydraulic fracturing of formation is noted and the advantages and perspectives of superheated steam injection are considered. Steam generators of a new type and ecologically clean and costeffective insulating for tubing pipes (TPs) are necessary to develop the superheated steam injection method. The article is devoted to solving one of the most important and urgent tasks, i.e., the development and usage of lightweight, nonflammable, environmentally safe, and cost-effective insulating materials. It is shown that, for tubing shielding operating at temperatures up to 420°C, the most effective thermal insulation is a highly porous material based on basalt fiber. The process of filtration deposition of short basalt fibers with a bunch of alumina thermal insulation tubing pipe coatings in the form of cylinders and cylindrical shells from liquid pulp is substantiated. Based on the thermophysical characteristics of basalt fibers and on the technological features of manufacturing highly porous coating insulation, the thickness of a tubing pipe is determined. During the prolonged pumping of the air at an operating temperature of 400°C in the model sample of tubing pipes with insulation and a protective layer, we find that the surface temperature of the thermal barrier coating does not exceed 60°C. Introducing the described technology will considerably reduce the negative impact of heavy-oil extraction on the biosphere.

  14. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  15. Textured carbon surfaces on copper by sputtering

    NASA Technical Reports Server (NTRS)

    Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

    1986-01-01

    A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

  16. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, Arthur T.; Hosford, Charles D.

    1981-01-01

    Microspheres are substantially uniformly coated with metals or nonmetals by simultaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure 12 comprising a parallel array of upwardly projecting individual gas outlets 16 is machined out to form a dimple 11. Glass microballoons, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  17. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  18. Controlling ion fluxes during reactive sputter-deposition of SnO{sub 2}:F

    SciTech Connect

    Jäger, Timo Romanyuk, Yaroslav E.; Tiwari, Ayodhya N.; Anders, André

    2014-07-21

    Magnetron sputtering of fluorine-doped tin oxide (FTO) is a scalable deposition method for large-area transparent conducting films used in fenestration, photovoltaics, and other applications. The electrical conductivity of sputtered FTO is, however, lower than that of spray-pyrolized FTO because of the ion damage induced by high energy ions leading to a reduction of the crystal quality in sputtered FTO films. In this study, various ion species present during the reactive sputtering of a metallic tin target in a mixed Ar/O{sub 2}/CF{sub 4} atmosphere are systematically characterized by energy and mass spectrometry, and possible ways of controlling the ion fluxes are explored. Ion energy distribution functions (IEDFs) of the negative ions F{sup −} and O{sup −} exhibit large peaks at an energy corresponding to the full target voltage. Although the applied partial pressure of CF{sub 4} is about 1/30 than that of O{sub 2}, the obtained IEDFs of F{sup −} and O{sup −} have comparable peak height, which can be attributed to a higher electronegativity of F. The IEDFs of positively charged O{sup +}, O{sub 2}{sup +}, Ar{sup +}, and Sn{sup +} species have their peaks around 2–8 eV. To control ion fluxes a solenoid or permanent magnets were placed between the target and the mass spectrometer. The flux of positive ions could be varied by several orders of magnitude as a function of the applied current through the solenoid, whereas the high-energy (>100 eV) negative F{sup −} and O{sup −} ions were not notably deflected. By using permanent magnets with the B-field orthogonal to the ion trajectory, the flux of O{sup −} ions could be decreased by two orders and the exposure to the high-energy F{sup −} ions was completely suppressed.

  19. Development of sputtered techniques for thrust chambers

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Schmid, T. E.; Torrey, C. T.

    1975-01-01

    Techniques and materials were developed and evaluated for the fabrication and coating of advanced, long life, regeneratively cooled thrust chambers. Materials were analyzed as fillers for sputter application of OFHC copper as a closeout layer to channeled inner structures; of the materials evaluated, aluminum was found to provide the highest bond strength and to be the most desirable for chamber fabrication. The structures and properties were investigated of thick sputtered OFHC copper, 0.15 Zr-Cu, Al2O3,-Cu, and SiC-Cu. Layered structures of OFHC copper and 0.15 Zr-Cu were investigated as means of improving chamber inner wall fatigue life. The evaluation of sputtered Ti-5Al-2.5Sn, NASA IIb-11, aluminum and Al2O3-Al alloys as high strength chamber outer jackets was performed. Techniques for refurbishing degraded thrust chambers with OFHC copper and coating thrust chambers with protective ZrO2 and graded ZrO2-copper thermal barrier coatings were developed.

  20. Heavy loads

    SciTech Connect

    Metz, D.

    1982-01-01

    The extreme pressures on the roof and walls of an earth-sheltered residential home are discussed and the need for careful planning is stressed. Pertinent terms are defined. Footings and wall structure (reinforced concrete walls and concrete block walls) are described. Roofing systems are discussed in detail and illustrated: (1) poured-in-place concrete roof slabs; (2) pre-cast concrete planks; and (3) heavy timber roofs. Insulation of earth-sheltered homes is reviewed in terms of using: (1) urethanes; (2) extruded polystyrene; and (3) expanded polystyrene. Advantages, disadvantages, R-factors, costs, and installation are discussed. (MJJ)

  1. SPUTTERING FROM A POROUS MATERIAL BY PENETRATING IONS

    SciTech Connect

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Caro, A.; Loeffler, M. J.; Farkas, D.

    2011-12-10

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space. Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  2. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  3. Sputtering from a Porous Material by Penetrating Ions

    NASA Technical Reports Server (NTRS)

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Johnson, R. E.; Caro, A.; Fama, M.; Loeffler, M.; Baragiola, R. A.; Farkas, D.

    2012-01-01

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space, Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  4. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1975-01-01

    The sputtering of the lunar surface by the solar wind is examined as a possible mechanism of mass fractionation. Simple arguments based on current theories of sputtering and the ballistics of the sputtered atoms suggest that most ejected atoms will have sufficiently high energy to escape lunar gravity. However, the fraction of atoms which falls back to the surface is enriched in the heavier atomic components relative to the lighter ones. This material is incorporated into the heavily radiation-damaged outer surfaces of grains where it is subject to resputtering. Over the course of several hundred years an equilibrium surface layer, enriched in heavier atoms, is found to form. The dependence of the calculated results upon the sputtering rate and on the details of the energy spectrum of sputtered particles is investigated. It is concluded that mass fractionation by solar wind sputtering is likely to be an important phenomenon on the lunar surface.

  5. Bearing endurance tests in vacuum for sputtered molybdenum disulfide films

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1975-01-01

    Angular-contact, 440C stainless steel, ball bearings with sputtered MoS2 films 0.0000006 x 10-7m (6000 A) thick were evaluated in a vacuum bearing chamber (1750 rpm, 137.9-N- (31-lbf-) thrust load) for endurance. Two types of sputtered films were evaluated: (1) MOS2 sputtered directly onto bearing components, and (2) a thin 0.0000001 x 10-7m (1000 A) underlayer of Cr3Si2 subsequently sputtered with MoS2. Bearing test evaluations in vacuum showed that endurance lives of more than 1000 hours (105,000,000 cycles) were obtained with bearings (cage, races, and balls) directly sputtered with MoS2. The same endurance lives were also obtained when only the races and cage were sputtered with an underlayer of Cr3Si2 and subsequently with MoS2.

  6. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  7. Ambient-Temperature Sputtering Of Composite Oxide Films

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1992-01-01

    Technique for deposition of homogeneous films of multicomponent oxides on substrates at ambient temperature based on sequential sputter deposition of individual metal components, as alternating ultra-thin layers, from multiple targets. Substrates rotated over sputtering targets of lead, zirconium, and titanium. Dc-magnetron sputtering of constituent metals in reactive ambient of argon and oxygen leads to formation of the respective metal oxides intermixed on extremely fine scale in desired composition. Compatible with low-temperature microelectronic processing.

  8. Low energy sputtering of cobalt by cesium ions

    NASA Technical Reports Server (NTRS)

    Handoo, A.; Ray, Pradosh K.

    1989-01-01

    An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

  9. Quantitative analysis of sputter processes in a small magnetron system

    SciTech Connect

    Knittel, Ivo; Gothe, Marc; Hartmann, Uwe

    2005-11-15

    Sputter deposition of titanium in argon from a small circular magnetron is characterized. The dependence of the deposition rate on pressure, power, and target-substrate distance has been measured. A framework for the application of the analytic approach by Keller and Simmons of ballistic and diffusive transport to simple three-dimensional sputter geometries is developed and applied. The sputter yield and the pressure-distance product are determined from the data set as the only fit parameters of the model. For the entire range of operation of the magnetron, the sputter process can be described in terms of the relatively simple approach.

  10. Sputter shadowing improved by using a tungsten target.

    PubMed

    Colquhoun, W R; Cassimeris, L U

    1985-05-01

    This work builds upon a previous paper (W. Colquhoun, 1984, J. Ultrastruct. Res. 87, 97) in which a sputter shadowing device was briefly described. The device allowed TEM specimens to be shadowed in a conventional sputter coater. Images obtained by sputter shadowing with a standard Au/Pd target were of good quality but were slightly inferior to the best that could be obtained by e--beam evaporation of tungsten. Here we show that construction and use of a tungsten target greatly improves the quality of the sputter shadowed deposit. Images of DNA and ribosomal subunits contrasted by sputter shadowing with tungsten are shown. The DNA images indicate that sputter shadowing with tungsten is a gentle contrasting technique. The sputter shadowed images of the 30 S ribosomal subunits show the major features of the particle revealed by evaporation shadowing using the most sophisticated of methods in that technology. Advantages of sputter shadowing are discussed and a rationale for the improved grain obtained by sputtering tungsten is suggested. PMID:2935642

  11. Energy and mass dependence of isotopic enrichment in sputtering

    SciTech Connect

    Shutthanandan, V.; Zhang, J.; Ray, Pradosh

    2003-05-01

    When a solid surface containing more than one component is bombarded by energetic particles, the sputtered flux is found to deviated from the stoichiometric composition of the target. This is known as preferential sputtering. Usually the sputtered flux is enriched with the lighter-mass particles, particularly at small emission angles. As the bombardment of the target is continued, the target surface becomes depleted in the particles that are preferentially emitted and a steady state is eventually established, where the ratio of the sputtered particles becomes equal to the natural abundance ratio of the particles in the target.

  12. Sputtered germanium/silicon devices for photonics applications

    NASA Astrophysics Data System (ADS)

    Nujhat, N.; Papouloute, J.-P.; DeBerry, M.; Jiang, L.; Korivi, N. S.

    2015-08-01

    We report on the ongoing investigation of magnetron sputtered germanium on silicon for photonics applications. Direct current (DC) magnetron sputtering has been used to deposit germanium layers on silicon at low growth temperatures and medium range vacuum levels. Standard photolithography has been used to make germanium photodetectors for the 1550 nm wavelength range. Electrical characterization, more specifically current-voltage measurements indicate that the devices function as intended. Sputtered silicon waveguides have also been fabricated and evaluated for possible applications in photonics integration. The sputtering-based developments in our present research are expected to provide for a flexible and economically viable manufacturing process for such devices.

  13. Improved adhesion of sputtered refractory carbides to metal substrates

    NASA Technical Reports Server (NTRS)

    Wheeler, D. R.; Brainard, W. A.

    1980-01-01

    Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited in practice by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium base alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

  14. Hydrogen Plasmas for Negative Ion Production

    SciTech Connect

    Pagano, D.; Gorse, C.; Capitelli, M.

    2005-05-16

    We have improved a zero-dimensional model, built to simulate the operating conditions in the excitation ('driver') region of a multicusp ion source optimized for negative ion production of great interest in thermonuclear applications. The new approach to couple heavy particle and electron kinetics is discussed.

  15. System analysis of plasma centrifuges and sputtering

    NASA Technical Reports Server (NTRS)

    Hong, S. H.

    1978-01-01

    System analyses of cylindrical plasma centrifuges are presented, for which the velocity field and electromagnetic fields are calculated. The effects of different electrode geometrics, induced magnetic fields, Hall-effect, and secondary flows are discussed. It is shown that speeds of 10000 m/sec can be achieved in plasma centrifuges, and that an efficient separation of U238 and U235 in uranium plasmas is feasible. The external boundary-value problem for the deposition of sputtering products is reduced to a Fredholm integral equation, which is solved analytically by means of the method of successive approximations.

  16. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C. Y.; Wallace, J. F.

    1981-01-01

    This investigation determined whether selected ion beam sputtered coatings on H-13 die steel would have the potential of improving the thermal fatigue behavior of the steel used as a die in aluminum die casting. The coatings were selected to test candidate insulators and metals capable of providing protection of the die surface. The studies indicate that 1 micrometer thick W and Pt coatings reduced the thermal fatigue more than any other coating tested and are candidates to be used on a die surface to increase die life.

  17. Atomic sputtering in the analytical electron microscope

    SciTech Connect

    Bradley, C.R.; Zaluzec, N.J.

    1988-08-01

    The advent of UHV medium voltage electron microscopes has brought the microanalyst to a regime of operating conditions in which electron beam induced damage can now be introduced to metallic specimens of medium to high atomic number. We report upon calculations of electron beam induced atomic sputtering which will have bearing upon the next generation of medium voltage analytical electron microscopes. The cross-section calculations reported herein have been completed for all solid elements of the periodic table for incident electron energies up to 1.5 MeV. All computer codes needed to duplicate these computations are available through the EMMPDL. 12 refs., 2 figs., 1 tab.

  18. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  19. Structural transformations in reactively sputtered alumina films

    SciTech Connect

    Nayar, P. Khanna, A.

    2014-04-24

    Thin films of amorphous alumina of thickness ∼350 nm were prepared on silicon wafer by DC cathode reactive sputtering. The effects of thermal annealing on the structural properties were investigated at annealing temperatures of 600°C, 800°C, 1100°C and 1220°C. X-ray diffraction showed that crystallization starts at 800°C and produces δ and θ alumina phases, the latter phase grows with heat treatment and the film was predominantly δ-phase with small amount of a-phase after annealing at 1220°C. AFM studies found that the surface of thin films smoothened upon crystallization.

  20. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  1. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  2. Application of the solid lubricant molybdenum disulfide by sputtering

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J.; Spalvins, T.

    1968-01-01

    Molybdenum disulfide lubricant film is deposited on two substrates, niobium and nickel-chromium alloys, by means of physical direct-current sputtering. The sputtering system uses a three-electrode /triode/ geometry - a thermionic cathode, an anode, and the target, all enclosed in a vacuum chamber.

  3. The target heating influence on the reactive magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Bondarenko, A.; Kolomiytsev, A.; Shapovalov, V.

    2016-07-01

    A physicochemical model for the reactive magnetron sputtering of a “hot” target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  4. A new technique for measuring sputtering yields at high energies

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Griffith, J. E.; Tombrello, T. A.

    1984-01-01

    The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a broad range of materials with high sensitivity. Analyzing the foils with Rutherford forward scattering, sputtered Al, Si and P surface densities down to 5 x 10 to the 13th per sq cm with uncertainties of about 20 percent have been measured.

  5. Electrochromism in sputtered WO{sub 3} thin films

    SciTech Connect

    Batchelor, R.A.; Burdis, M.S.; Siddle, J.R.

    1996-03-01

    There are large variations in the properties of WO{sub 3} sputtered under different conditions and two samples sputtered from an oxide target and reactively sputtered from a metal target were compared in detail. The thin film sputtered from an oxide target was found to color and bleach rapidly in 1 M LiClO{sub 4} in propylene carbonate, while the thin film reactively sputtered from a metal target could be colored deeply, but bleached only slowly. By calculating the rate of change of optical density during cyclic voltammetry, it was possible to directly compare the coloration response with the current/voltage behavior of the electrodes. In both cases at least two lithium insertion reactions appear to occur. The distinction between the two reactions was especially clear in the sample sputtered from a metal target, in which an insertion of high electrochromic efficiency occurred up to Li{sub 0.2}WO{sub 3} and then an insertion of considerably lower electrochromic efficiency up to Li{sub 0.5}WO{sub 3}. Although a small amount of coloration and bleaching continued to occur after switching the reactively sputtered sample to open circuit during the coloration and bleaching cycles; transmission change was largely halted by disconnecting the external current supply. The slow end to the bleach of the reactively sputtered sample corresponded to a reaction of high electrochromic efficiency.

  6. Apparatus for and method of controlling sputter coating

    SciTech Connect

    Boys, R.

    1985-02-19

    The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

  7. Sputtered metal and silicon cluster ions: collision-induced fragmentation and neutralization

    NASA Astrophysics Data System (ADS)

    Begemann, W.; Hector, R.; Liu, Y. Y.; Tiggesbäumker, J.; Meiwes-Broer, K. H.; Lutz, H. O.

    1989-03-01

    Mass separated metal and silicon cluster ion beams M{/n +, -} are produced by sputtering and undergo fragmenting and/or neutralizing collisions at different kinetic energies (100 1800 eV) in Ar and SF6. Fragment patterns induced by rare gas collisions open a way to determine ionization potentials and electron affinities of clusters. These values are compared to known experimental and theoretical data. For negatively charged clusters the absorption in gas targets is mainly due to neutralization, the cross sections varying with cluster material, number of atoms and collision partner from 10 Å2 to about 50 Å2.

  8. Two Cases of Heavy Chain MGUS.

    PubMed

    Van Keer, Jan; Meijers, Björn; Delforge, Michel; Verhoef, Gregor; Poesen, Koen

    2016-01-01

    Heavy chain diseases are rare variants of B-cell lymphomas that produce one of three classes of immunoglobulin heavy chains, without corresponding light chains. We describe two patients with asymptomatic heavy chain monoclonal gammopathy. The first patient is a 51-year-old woman with alpha paraprotein on serum immunofixation. The second case is a 46-year-old woman with gamma paraprotein on urine immunofixation. Neither patient had corresponding monoclonal light chains. Workup for multiple myeloma and lymphoma was negative in both patients. These two cases illustrate that heavy chain monoclonal gammopathy can exist in the absence of clinically apparent malignancy. Only a few reports of "heavy chain MGUS" have been described before. In the absence of specialized guidelines, we suggest a similar follow-up as for MGUS, while taking into account the higher probability of progression to lymphoma than to myeloma. PMID:27213064

  9. Two Cases of Heavy Chain MGUS

    PubMed Central

    Meijers, Björn; Delforge, Michel; Verhoef, Gregor; Poesen, Koen

    2016-01-01

    Heavy chain diseases are rare variants of B-cell lymphomas that produce one of three classes of immunoglobulin heavy chains, without corresponding light chains. We describe two patients with asymptomatic heavy chain monoclonal gammopathy. The first patient is a 51-year-old woman with alpha paraprotein on serum immunofixation. The second case is a 46-year-old woman with gamma paraprotein on urine immunofixation. Neither patient had corresponding monoclonal light chains. Workup for multiple myeloma and lymphoma was negative in both patients. These two cases illustrate that heavy chain monoclonal gammopathy can exist in the absence of clinically apparent malignancy. Only a few reports of “heavy chain MGUS” have been described before. In the absence of specialized guidelines, we suggest a similar follow-up as for MGUS, while taking into account the higher probability of progression to lymphoma than to myeloma. PMID:27213064

  10. Differential sputter yield measurements using cavity ringdown spectroscopy.

    PubMed

    Surla, Vijay; Yalin, Azer P

    2007-07-01

    The first use of cavity ringdown spectroscopy (CRDS) to measure differential (angular) sputter yield profiles of sputtered particles is reported. Owing to the path-integrated nature of CRDS, inversion techniques are required. Our approach is to scan the optical axis relative to the source of sputtered particles and to measure the spatial profile of the CRDS signals. Modeling is then used to determine the differential sputter yield profile from the measured CRDS spatial profile. Demonstrative measurements are made with a Nd:YAG pumped optical parametric oscillator laser system for 750 eV argon ions normally incident on a molybdenum target. At these conditions we find an under- cosine sputtering distribution characterized by alpha = 0.22 +/- 0.07 in good agreement with past quartz crystal microbalance measurements (alpha = 0.19). PMID:17571136

  11. Sputtering at grazing ion incidence: Influence of adatom islands

    SciTech Connect

    Rosandi, Yudi; Redinger, Alex; Michely, Thomas; Urbassek, Herbert M.

    2010-09-15

    When energetic ions impinge at grazing incidence onto an atomically flat terrace, they will not sputter. However, when adatom islands (containing N atoms) are deposited on the surface, they induce sputtering. We investigate this effect for the specific case of 83 deg. -incident 5 keV Ar ions on a Pt (111) surface by means of molecular-dynamics simulation and experiment. We find that - for constant coverage {Theta} - the sputter yield has a maximum at island sizes of N congruent with 10-20. A detailed picture explaining the decline of the sputter yield toward larger and smaller island sizes is worked out. Our simulation results are compared with dedicated sputtering experiments, in which a coverage of {Theta}=0.09 of Pt adatoms are deposited onto the Pt (111) surface and form islands with a broad distribution around a most probable size of N congruent with 20.

  12. Sputter-deposited fuel cell membranes and electrodes

    NASA Technical Reports Server (NTRS)

    Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

    2001-01-01

    A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

  13. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed. PMID:24231648

  14. Mixed composition materials suitable for vacuum web sputter coating

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

    1996-01-01

    Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

  15. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  16. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  17. Lubrication with sputtered MoS2 films.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1971-01-01

    Sputtered MoS2 films (2000-6500 A) were deposited on highly polished metal surfaces. These films have a low coefficient of friction (0.03-0.04) at speeds of 40-80 rpm and loads of 250-1000 grams. At loads of 250 grams the wear lives are over 0.5 million cycles, but at 1000 gram loads, it decreases to 38,000 cycles. Friction experiments and tensile tests have indicated that sputtered films have a strong adherence to metal surfaces. Electron transmission, diffraction and scanning electron microscopy show that these films have an extremely small particle size, less than 30 A in diameter, and are very dense and free from observable pinholes. The high kinetic energy of these sputtered species, the submicroscopic particle size and the sputter-etched substrate surface is responsible for strong adhesion and cohesion of the sputtered film.

  18. Reactive sputter deposition of metal oxide nanolaminates

    NASA Astrophysics Data System (ADS)

    Rubin Aita, Carolyn

    2008-07-01

    We discuss the reactive sputter deposition of metal oxide nanolaminates on unheated substrates using four archetypical examples: ZrO2 Al2O3, HfO2 Al2O3, ZrO2 Y2O3, and ZrO2 TiO2. The pseudobinary bulk phase diagrams corresponding to these nanolaminates represent three types of interfaces. I. Complete immiscibility (ZrO2 Al2O3 and HfO2 Al2O3). II. Complete miscibility (ZrO2 Y2O3). III. Limited miscibility without a common end-member lattice (ZrO2 TiO2). We found that, although reactive sputter deposition is a far-from-equilibrium process, thermodynamic considerations strongly influence both phase formation within layers and at interfaces. We show that pseudobinary phase diagrams can be used to predict interfacial cation mixing in the nanolaminates. However, size effects must be considered to predict specific structures. In the absence of pseudoepitaxy, size effects play a significant role in determining the nanocrystalline phases that form within a layer (e.g. tetragonal ZrO2, tetragonal HfO2, and orthorhombic HfO2) and at interfaces (e.g. monoclinic (Zr,Ti)O2). These phases are not bulk standard temperature and pressure phases. Their formation is understood in terms of self-assembly into the lowest energy structure in individual critical nuclei.

  19. Thermal conductivities of thin, sputtered optical films

    SciTech Connect

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

  20. PIC Simulation for ICF Plasma Sputter Coater

    NASA Astrophysics Data System (ADS)

    Wu, W.; Huang, H.; Parks, P. B.; Chan, V. S.; Walton, C. C.; Wilks, S. C.

    2010-11-01

    To satisfy mesh spacing constraint δ/λDebye<=1 particle In Cell (PIC) simulations at 25x reduced cathode currents levels are used to numerically model the distribution of currents, electrostatic potentials and particle kinetics in a Type II ``unbalanced'' cylindrically symmetric magnetron discharge used for Be sputter coating of ICF capsules. Simulation indicates a strong magnetic field confinement of the plasma in the closed field lines region adjacent to cathode, and accompanying cross-field line plasma diffusion into the open-field line region connected to wall/anode. A narrow Charles-Langmuir sheath and a pre-sheath that is ˜10x wider due to the existence of the B-field are observed. The effects of varying boundary conditions, e.g., the separation between the anode/cathode, the anode bias voltage, etc., are studied, which is expected to aid experimentalists in turning these ``knobs'' for better coating qualities. We also show that the etch rate due to sputtering of Be targets predicted by the results of our PIC simulations, after rescaling to experimental conditions, agrees with experiments.

  1. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  2. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    NASA Astrophysics Data System (ADS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-08-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N+ and Ar+ ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models.

  3. Meningitis - gram-negative

    MedlinePlus

    Gram-negative meningitis ... Acute bacterial meningitis can be caused by Gram-negative bacteria. Meningococcal and H. influenzae meningitis are caused by Gram-negative bacteria and are covered in detail in other articles. This article ...

  4. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  5. Thermoacoustic imaging using heavy ion beams

    SciTech Connect

    Claytor, T.N.; Tesmer, J.R.; Deemer, B.C.; Murphy, J.C.

    1995-10-01

    Ion beams have been used for surface modification, semiconductor device fabrication and for material analysis, which makes ion-material interactions of significant importance. Ion implantation will produce new compositions near the surface by ion mixing or directly by implanting desired ions. Ions exchange their energy to the host material as they travel into the material by several different processes. High energy ions ionize the host atoms before atomic collisions transfer the remaining momentum and stop the incident ion. As they penetrate the surface, the low energy ions ionize the host atoms, but also have a significantly large momentum transfer mechanism near the surface of the material. This leads to atoms, groups of atoms and electrons being ejected from the surface, which is the momentum transfer process of sputtering. This talk addresses the acoustic waves generated during ion implantation using modulated heavy ion beams. The mechanisms for elastic wave generation during ion implantation, in the regimes where sputtering is significant and where implantation is dominant and sputtering is negligible, has been studied. The role of momentum transfer and thermal energy production during ion implantation was compared to laser generated elastic waves in an opaque solid as a reference, since laser generated ultrasound has been extensively studied and is fairly well understood. The thermoelastic response dominated in both high and low ion energy regimes since, apparently, more energy is lost to thermal heat producing mechanisms than momentum transfer processes. The signal magnitude was found to vary almost linearly with incident energy as in the laser thermoelastic regime. The time delays for longitudinal and shear waves-were characteristic of those expected for a purely thermal heating source. The ion beams are intrinsically less sensitive to the albedo of the surface.

  6. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO{sub 2}

    SciTech Connect

    Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; Stickle, W. F.; Wallace, R. M.; Wright, B. S.

    2010-09-15

    There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO{sub 2}, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO{sub 2}, Al{sub 2}O{sub 3}, CeO{sub 2}, Cr{sub 2}O{sub 3}, Fe{sub 2}O{sub 3}, HfO{sub 2}, In-Sn oxide, Ta{sub 2}O{sub 5}, TiO{sub 2} (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO{sub 2}. The ratios of sputter rates relative to those of SiO{sub 2} appear to be relatively independent of ion beam energy in the range of 1-4 kV and for incident angles <50 deg. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.

  7. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    NASA Technical Reports Server (NTRS)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  8. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C.-Y.; Wallace, J. F.

    1981-01-01

    Three experimental research designs investigating candidate materials and processes involved in protective die surface coating procedures by sputter deposition, using ion beam technologies, are discussed. Various pre-test results show that none of the coatings remained completely intact for 15,000 test cycles. The longest lifetime was observed for coatings such as tungsten, platinum, and molybdenum which reduced thermal fatigue, but exhibited oxidation and suppressed crack initiation only as long as the coating did not fracture. Final test results confirmed earlier findings and coatings with Pt and W proved to be the candidate materials to be used on a die surface to increase die life. In the W-coated specimens, which remained intact on the surface after thermal fatigue testing, no oxidation was found under the coating, although a few cracks formed on the surface where the coating broke down. Further research is planned.

  9. Plasma Induced Sputtered Exosphere of Callisto

    NASA Astrophysics Data System (ADS)

    Pfleger, Martin; Lammer, Helmut; Lindkvist, Jesper; Holmström, Mats; Vorburger, Audrey; Galli, André; Wurz, Peter; Lichtenegger, Herbert; Barabash, Stas

    2014-05-01

    A better understanding of particle release processes from the Gallilean satellites such as Callisto's surface is needed for planned exospheric and remote surface geochemical studies by the particle and plasma instruments of the PEP experiment on board of ESA's JUICE mission. We study the interaction between the Jovian magnetosphere plasma and Callisto's surface with a hybrid model and applied a geochemical surface composition model for the input of the surface sputter release. Then we apply a 3-D exospheric model for studying the feasibility of exospheric measurements. We model energy and ejection angle distributions of the released particles from the surface, with the emission process determining the actual distribution functions. Our model follows the trajectory of each particle by numerical integration until the particle hits Callisto's surface again or escapes from the calculation domain. Using a large set of these trajectories, bulk parameters of the exospheric gas are derived, e.g., particle densities for various species.

  10. Magnetization relaxation in sputtered thin permalloy films

    NASA Astrophysics Data System (ADS)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  11. Thermal stability of sputtered iridium oxide films

    SciTech Connect

    Sanjines, R.; Aruchamy, A.; Levy, F. )

    1989-06-01

    Dry and partially hydrated films of IrO/sub 2/ were prepared by reactive sputtering. The authors discuss their thermal stability investigated by means of XPS, x-ray diffraction, and resistivity measurements. Dry films decomposed at about 400{sup 0}C iin air and at 200{sup 0}C in vacuum (10/sup -2/ Pa), whereas partially hydrated films decomposed at 350{sup 0} and 150{sup 0}C, respectively. After electrochemical treatments of the films mounted as electrochromic electrodes in an electrolytic cell, the decomposition occurred at different temperatures. In particular, the bleached state was found to have the relatively low decomposition temperature of about 100{sup 0}C in air.

  12. Sputtered W-N diffusion barriers

    NASA Technical Reports Server (NTRS)

    Kattelus, H. P.; Kolawa, E.; Affolter, K.; Nicolet, M.-A.

    1985-01-01

    The thermal stability of reactively sputtered tungsten-nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W-N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W-N alloys can effectively prevent interdiffusion at temperatures as high as 800 C for 30 min.

  13. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  14. Computer studies of the surface mechanism of preferential sputtering of two-component solids. Ion beam analysis of surface composition in low dose regime

    NASA Astrophysics Data System (ADS)

    Samoilov, Vladimir N.; Tatur, Andrei E.; Yastrzhembsky, Vladimir I.

    1996-09-01

    We investigated the process of collision cascade propagation through the solid-vacuum boundary for two-component targets: WSi, MoSi and VSi. The surface mechanism of preferential sputtering of atoms of light component based on stronger deflection of light atoms towards surface normal when scattering by heavy neighbouring surface atoms during ejection was studied. Simulations for ejection of 450 000 Si or W atoms from the surface of WSi for cos {ϑ 0}/{E 02} and {1}/{E 02} initial distributions gave {Si}/{W} sputtering ratio equal to 1.29-1.55 (for 1:1 {Si}/{W} concentration ratio at the surface) giving necessary addition to the Andersen-Sigmund formula which underestimated that ratio in comparison with available experimental data. Analysis of integral energy distributions of atoms of the components gave {Si}/{W} ratio maximum equal to 3.18-5.00 for energy interval 0.0-0.4 eV. Maxima of integral energy distributions of sputtered atoms were observed at 1.8 eV for Si and 3.4 eV for W in calculations with equal binding energies for atoms of light and heavy components in good agreement with experiment. The surface mechanism was shown to be the alternative mechanism in formation of observed maxima difference with respect to nonidentity of binding energy values for atoms of components proposed by Szymonski [Phys. Lett. A 82 (1981) 203]. The two-cone structure of ejection vs. initial polar angle for Si atoms sputtered was revealed and explained. Results obtained gave the new approach to solve the inverse problem of reconstruction of surface composition in low dose SNMS and showed that the surface mechanism of preferential sputtering is to be accounted for in analytical calculations of surface composition. Ejection was simulated in the plane containing the neighbouring surface atom.

  15. Drifting potential humps in ionization zones: The “propeller blades” of high power impulse magnetron sputtering

    SciTech Connect

    Anders, André; Ni, Pavel; Panjan, Matjaž; Franz, Robert; Andersson, Joakim

    2013-09-30

    Ion energy distribution functions measured for high power impulse magnetron sputtering show features, such as a broad peak at several 10 eV with an extended tail, as well as asymmetry with respect to E×B, where E and B are the local electric and magnetic field vectors, respectively. Here it is proposed that those features are due to the formation of a potential hump of several 10 V in each of the traveling ionization zones. Potential hump formation is associated with a negative-positive-negative space charge that naturally forms in ionization zones driven by energetic drifting electrons.

  16. Negative ions at Titan and Enceladus: recent results.

    PubMed

    Coates, Andrew J; Wellbrock, Anne; Lewis, Gethyn R; Jones, Geraint H; Young, David T; Crary, Frank J; Waite, J Hunter; Johnson, Robert E; Hille, Thomas W; Sittler, Edward C

    2010-01-01

    The detection of heavy negative ions (up to 13 800 amu) in Titan's ionosphere is one of the tantalizing new results from the Cassini mission. These heavy ions indicate for the first time the existence of heavy hydrocarbon and nitrile molecules in this primitive Earth-like atmosphere. These ions were suggested to be precursors of aerosols in Titan's atmosphere and may precipitate to the surface as tholins. We present the evidence for and the analysis of these heavy negative ions at Titan. In addition we examine the variation of the maximum mass of the Titan negative ions with altitude and latitude for the relevant encounters so far, and we discuss the implications for the negative ion formation process. We present data from a recent set of encounters where the latitude was varied between encounters, with other parameters fixed. Models are beginning to explain the low mass negative ions, but the formation process for the higher mass ions is still not understood. It is possible that the structures may be chains, rings or even fullerenes. Negative ions, mainly water clusters in this case, were seen during Cassini's recent close flybys of Enceladus. We present mass spectra from the Enceladus plume, showing water clusters and additional species. As at Titan, the negative ions indicate chemical complexities which were unknown before the Cassini encounters, and are indicative of a complex balance between neutrals and positively and negatively charged ions. PMID:21302552

  17. Tailoring material properties of sputtered beryllium

    SciTech Connect

    McEachern, R.M.

    1999-03-01

    Doped beryllium is a material of considerable interest to both the ICF and the weapons communities, as well as finding application in specialized industrial settings (e.g., x-ray windows and mirrors). Some of these uses require conformal coating of thin films on (possibly) irregularly-shaped surfaces. Physical vapor deposition (PVD) is often used to accomplish this, and sputtering is often the technique of choice. Among its advantages are that the depositing atoms are relatively energetic, leading to more compact films. Moreover, by simply applying a voltage bias to the substrate, ambient noble gas ions will bombard the growing film, which can cause further densification and other modifications to the microstructure. Sputtering is also well suited to the introduction of dopants, even those that are insoluble. Most applications of these novel materials will require fundamental knowledge of their properties. Because so many can be devised, such information is generally unavailable. The objective of the effort has been to systematically study the properties of films produced under different conditions, with an emphasis on surface finish and permeability. They have made extensive use of atomic force microscopy (AFM) and electron microscopy to determine the microstructure of the films, along with composition probes (mainly x-ray fluorescence) to quantify the chemical structure. The studies can be roughly divided into three categories. First, there are those in which the properties of pure or Cu-doped Be films have been investigated, especially on randomly-agitated spherical capsules. Included are studies of the effects of a constant substrate bias ranging from 0 to 120 v and application of an intermittent bias during deposition. Second, there are experiments in which the structure of the depositing films has been modified via the incorporation of dopants, primarily boron. Finally, there have been numerous attempts to characterize the permeability of Be coatings at

  18. Reactively sputtered Ru-Si-O films

    NASA Astrophysics Data System (ADS)

    Gasser, S. M.; Kolawa, E.; Nicolet, M.-A.

    1999-08-01

    Films of Ru-Si-O were synthesized by reactively sputtering a Ru1Si1 target in an Ar/O2 gas mixture. They were characterized in terms of their composition by 2.0 MeV 4He++ backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. The compositions indicate preferential sputtering with ruthenium enrichment of the films, and a saturation level of oxygen is determined at 67 at. % corresponding to the formation of SiO2 and RuO2. X-ray diffraction spectra reveal an amorphous structure for oxygen-saturated and nanocrystals for unsaturated as-deposited films. The crystallization temperature clearly increases with the oxygen concentration of the films, from 500 °C for oxygen-free films to 1000 °C for oxygen-saturated films, when annealed in vacuum for 30 min. Transmission electron micrographs of as-deposited oxygen-saturated films show few nanocrystals of 1-2 nm in diameter in an otherwise amorphous matrix. The atomic density is roughly 8×1022 atom/cm3 for all compositions. The resistivity of the ternary alloys scales with the terminal phases in the ternary phase diagram and reaches a maximum value when the Ru-SiO2 tie line is crossed near 50 at. % oxygen. The films are stable in vacuum up to thermal stressing at 800 °C for 5 h, and their decomposition starts near 1000 °C.

  19. Development of latent fingerprints using preferential DC sputter deposition.

    PubMed

    Kent, K; Stoilovic, M

    1995-03-21

    It was shown that a DC metal sputtering process with thermalised atoms, preferentially deposits metal onto fingerprint ridges. This method can be successfully used for the development of latent fingerprints. Four target metals were tested--copper, zinc, platinum, and gold--with platinum showing superior results for latent fingerprint development on clear polythene substrates. A comparison of platinum sputtering and cyanoacrylate fuming followed by rhodamine-6G staining, was conducted for 1-year-old fingerprint deposits. Platinum sputtering showed significantly higher sensitivity, and produced better overall results. PMID:7705733

  20. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  1. Sputtering of HOPG under high-dose ion irradiation

    NASA Astrophysics Data System (ADS)

    Borisov, A. M.; Mashkova, E. S.; Nemov, A. S.; Virgiliev, Yu. S.

    2007-03-01

    The dependences of sputtering yield Y of highly oriented pyrolytic graphite under high fluences (1018-1019 ion/cm2) 30 keV N2+ irradiation at ion incidence angles from θ = 0 (normal incidence) to θ = 80° at room temperature (RT) and T = 400 °C have been measured to trace the radiation damage influence on angular behavior of sputtering yield. A difference has been found between angular dependences of sputtering yields at RT, when the irradiation leads to a high degree of disorder, and at temperatures, larger than the temperature Ta responsible for annealing the radiation damage at continuous ion bombardment.

  2. Magnetron sputtered boron films and Ti/B multilayer structures

    SciTech Connect

    Makowiecki, D.M.; Jankowski, A.F.

    1991-03-11

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

  3. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  4. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  5. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  6. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  7. The new applications of sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1977-01-01

    The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.

  8. Porous, High Capacity Coatings for Solid Phase Microextraction by Sputtering.

    PubMed

    Diwan, Anubhav; Singh, Bhupinder; Roychowdhury, Tuhin; Yan, DanDan; Tedone, Laura; Nesterenko, Pavel N; Paull, Brett; Sevy, Eric T; Shellie, Robert A; Kaykhaii, Massoud; Linford, Matthew R

    2016-02-01

    We describe a new process for preparing porous solid phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers. The microstructure of these coatings is a function of the substrate geometry and mean free path of the silicon atoms, and the coating thickness is controlled by the sputtering time. Sputtered silicon structures on silica fibers were treated with piranha solution (a mixture of concd H2SO4 and 30% H2O2) to increase the concentration of silanol groups on their surfaces, and the nanostructures were silanized with octadecyldimethylmethoxysilane in the gas phase. The attachment of this hydrophobic ligand was confirmed by X-ray photoelectron spectroscopy and contact angle goniometry on model, planar silicon substrates. Sputtered silicon coatings adhered strongly to their surfaces, as they were able to pass the Scotch tape adhesion test. The extraction time and temperature for headspace extraction of mixtures of alkanes and alcohols on the sputtered fibers were optimized (5 min and 40 °C), and the extraction performances of SPME fibers with 1.0 or 2.0 μm of sputtered silicon were compared to those from a commercial 7 μm poly(dimethylsiloxane) (PDMS) fiber. For mixtures of alcohols, aldehydes, amines, and esters, the 2.0 μm sputtered silicon fiber yielded signals that were 3-9, 3-5, 2.5-4.5, and 1.5-2 times higher, respectively, than those of the commercial fiber. For the heavier alkanes (undecane-hexadecane), the 2.0 μm sputtered fiber yielded signals that were approximately 1.0-1.5 times higher than the commercial fiber. The sputtered fibers extracted low molecular weight analytes that were not detectable with the commercial fiber. The selectivity of the sputtered fibers appears to favor analytes that have both a hydrophobic component and hydrogen-bonding capabilities. No detectable carryover between runs was noted for the sputtered fibers. The repeatability (RSD%) for a fiber (n = 3) was less than 10% for all analytes tested

  9. Whiskers, cones and pyramids created in sputtering by ion bombardment

    NASA Technical Reports Server (NTRS)

    Wehner, G. K.

    1979-01-01

    A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.

  10. Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

    NASA Astrophysics Data System (ADS)

    Wei, Xiongbang; Li, Shibin; Gou, Jun; Dong, Xiang; Yang, Xiaohui; Li, Weizhi; Wang, Tao; Wu, Zhiming; Jiang, Yadong; Chen, Zhi

    2014-06-01

    Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

  11. Large negative magnetoresistance in reactive sputtered polycrystalline GdN{sub x} films

    SciTech Connect

    Mi, W. B.; Duan, X. F.; Zhang, X. J.; Bai, H. L.; Guo, Z. B.

    2013-06-03

    Polycrystalline ferromagnetic GdN{sub x} films were fabricated at different N{sub 2} flow rates (f{sub N2}) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (T{sub C}) of {approx}40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T{sub C}. The films at f{sub N2} = 5, 10, 15, and 20 sccm show MR of -38%, -42%, -46%, and -86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at f{sub N2} = 20 sccm is attributed to large spin polarization of half-metallicity in GdN{sub x} with low N vacancies.

  12. Design, development, and manufacturing of highly advanced and cost effective aluminium sputtering plant for large area telescopic mirrors.

    NASA Astrophysics Data System (ADS)

    Pillai, Rajeev R.; Sanjith K., K.; Mohanachandran, K.; Sakhamuri, Nagarjun; Shukla, Vishal; Gupta, Alok

    2012-09-01

    The design, development and manufacturing of a fully automated and cost effective aluminum sputtering unit for the deposition of aluminum on large area telescopic mirrors (maximum diameter of 3600mm) is presented here. The unit employs DC planar magnetron sputtering for the deposition process. A large area glow discharge unit is also designed for the pre-cleaning of the mirrors prior to aluminum coating. A special kinematic support structure with rotation is designed to support heavy mirrors of large area to minimize the deflection of the mirrors during deposition process. A custom designed 'mask' is employed in the magnetron system to improve the thickness uniformity within <±3%. The adhesion, thickness uniformity and reflectivity properties are studied in detail to validate the sputtering plant. Special fixtures have been designed for the system to accommodate smaller mirrors and studies have been conducted for the coatings and reported in the paper. The unit was successfully tested at HHV facility in Bangalore and will be installed at the ARIES Facility, Nainital.

  13. Composition, morphology and mechanical properties of sputtered TiAlN coating

    SciTech Connect

    Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

    2014-03-24

    TiAlN coating was deposited on the tungsten carbide cutting tool by using DC magnetron sputtering system to study the influence of substrate bias and nitrogen flow rate on the composition, morphology and mechanical properties. The negatively substrate bias and nitrogen flow rate was varied from about −79 to −221 V and 30 sccm to 72 sccm, respectively. The coating composition and roughness were characterized by using SEM/EDX and Atomic Force Microscopy (AFM), respectively. The dynamic ultra micro hardness tester was used to measure the mechanical properties. The coating hardness increases to about 10-12 GPa with an increase of the negatively substrate bias up to − 200 V and it tend to decrease with an increase in nitrogen flow rate up to 70 sccm. The increase of hardness follows the increase of Ti and N content and rms coating roughness.

  14. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    DOEpatents

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  15. Microstructural and wear properties of sputtered carbides and silicides

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1977-01-01

    Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

  16. The first laboratory measurements of sulfur ions sputtering water ice

    NASA Astrophysics Data System (ADS)

    Galli, André; Pommerol, Antoine; Vorburger, Audrey; Wurz, Peter; Tulej, Marek; Scheer, Jürgen; Thomas, Nicolas; Wieser, Martin; Barabash, Stas

    2015-04-01

    The upcoming JUpiter ICy moons Explorer mission to Europa, Ganymede, and Callisto has renewed the interest in the interaction of plasma with an icy surface. In particular, the surface release processes on which exosphere models of icy moons rely should be tested with realistic laboratory experiments. We therefore use an existing laboratory facility for space hardware calibration in vacuum to measure the sputtering of water ice due to hydrogen, oxygen, and sulfur ions at energies from 1 keV to 100 keV. Pressure and temperature are comparable to surface conditions encountered on Jupiter's icy moons. The sputter target is a 1cm deep layer of porous, salty water ice. Our results confirm theoretical predictions that the sputter yield from oxygen and sulfur ions should be similar. Thanks to the modular set-up of our experiment we can add further surface processes relevant for icy moons, such as electron sputtering, sublimation, and photodesorption due to UV light.

  17. The corrosivity and passivity of sputtered Mg-Ti alloys

    SciTech Connect

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  18. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  19. Development of RF sputtered chromium oxide coating for wear application

    NASA Technical Reports Server (NTRS)

    Bhushan, B.

    1979-01-01

    The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

  20. Factors determining the efficiency of magnetron sputtering. Optimization criteria

    NASA Astrophysics Data System (ADS)

    Rogov, A. V.; Kapustin, Yu. V.; Martynenko, Yu. V.

    2015-02-01

    We report on the results of experimental study of the dependence of sputtering energy efficiency K w in a dc planar magnetron sputtering setup on the discharge power, working gas pressure, magnetic field, cathode erosion depth, and the structure of the gas puffing system and anode. We propose that this parameter be used for comparing the degree of perfection of the magnetron design irrespective of the magnetron size and structural features. The results of measurements of K w in sputtering of Al, Ti, Cr, Cu, Zn, Zr, Nb, Mo, Ag, In, Sn, Ta, W, Pt, and Au are considered. The optimization criterion is worked out for the magnetic system of the magnetron, which ensures the minimal working pressure and the maximal sputtering rate for the cathode. The results are analyzed theoretically.

  1. The corrosivity and passivity of sputtered Mg-Ti alloys

    DOE PAGESBeta

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide filmmore » was formed on a sputtered Ti–Mg based alloy.« less

  2. Sputtering of Au induced by single Xe ion impacts

    SciTech Connect

    Birtcher, R. C.; Donnelly, S. E.

    1999-12-06

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry.

  3. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  4. Sputtering studies during lanthanum implantation in stainless steels

    NASA Astrophysics Data System (ADS)

    Ager, F. J.; Respaldiza, M. A.; Soares, J. C.; da Silva, M. F.; Odriozola, J. A.

    1997-05-01

    Lanthanum ions of 100 keV have been implanted in AISI304 specimens at different doses. The erosion or sputtering of the surface atoms, either from the steel matrix or already implanted, during the implantation process imposes a limitation on the maximum implantable dose. Hoping to increase this dose, we deposited thin layers of aluminium and alumina (Al 2O 3) on top of steel samples of similar composition and sputtering behaviour (AISI302), as the sputtering effect is much weaker on such species and this layer could also prevent the steel atoms from being removed from the surface. The experimental determination of the sputtering coefficients, total or partial, and its comparison with theoretical values, when possible, is another aim of this work.

  5. Magnetospheric ion sputtering and water ice grain size at Europa

    NASA Astrophysics Data System (ADS)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  6. Multilayer Badges Indicate Depths Of Ion Sputter Etches

    NASA Technical Reports Server (NTRS)

    Beattie, J. R.; Matossian, J. N.; Garvin, H. L.

    1994-01-01

    Multilayer badges devised to provide rapid, in-place indications of ion sputter etch rates. Badges conceived for use in estimating ion erosion of molybdenum electrodes used in inert-gas ion thrustors. Concept adapted to measure ion erosion in industrial sputter etching processes used for manufacturing of magnetic, electronic, and optical devices. Badge etched when bombarded by energetic ions. Badge layers exposed using mask. Contrast between layers facilitates counting of layers to determine etch depth.

  7. Surface instability of binary compounds caused by sputter yield amplification

    SciTech Connect

    Mark Bradley, R.

    2012-06-01

    It is demonstrated that the flat surface of a binary material that is subjected to normal-incidence ion bombardment can be unstable even if the curvature dependence of the sputter yields is negligibly small. This unforeseen instability is brought about by sputter yield amplification, and it results in the formation of a disordered array of nanodots with the lighter of the two atomic species concentrated at the peaks of the dots.

  8. Sputtering of oxygen ice by low energy ions

    NASA Astrophysics Data System (ADS)

    Muntean, E. A.; Lacerda, P.; Field, T. A.; Fitzsimmons, A.; Hunniford, C. A.; McCullough, R. W.

    2015-11-01

    Naturally occurring ices lie on both interstellar dust grains and on celestial objects, such as those in the outer Solar system. These ices are continuously subjected to irradiation by ions from the solar wind and/or cosmic rays, which modify their surfaces. As a result, new molecular species may form which can be sputtered off into space or planetary atmospheres. We determined the experimental values of sputtering yields for irradiation of oxygen ice at 10 K by singly (He+, C+, N+, O+ and Ar+) and doubly (C2 +, N2 + and O2 +) charged ions with 4 keV kinetic energy. In these laboratory experiments, oxygen ice was deposited and irradiated by ions in an ultra high vacuum chamber at low temperature to simulate the environment of space. The number of molecules removed by sputtering was observed by measurement of the ice thickness using laser interferometry. Preliminary mass spectra were taken of sputtered species and of molecules formed in the ice by temperature programmed desorption (TPD). We find that the experimental sputtering yields increase approximately linearly with the projectile ion mass (or momentum squared) for all ions studied. No difference was found between the sputtering yields for singly and doubly charged ions of the same atom within the experimental uncertainty, as expected for a process dominated by momentum transfer. The experimental sputter yields are in good agreement with values calculated using a theoretical model except in the case of oxygen ions. Preliminary studies have shown molecular oxygen as the dominant species sputtered and TPD measurements indicate ozone formation.

  9. Dust Particle Growth in a Sputtering Discharge with Krypton

    SciTech Connect

    Tawidian, H.; Mikikian, M.; Lecas, T.; Boufendi, L.

    2011-11-29

    Dust particles are grown in the PKE chamber by sputtering materials. The sputtering efficiency and the gas phase reactions can be affected by the gas type and particularly by the ion mass. Due to the presence of growing dust particles, the huge loss of electrons can trigger many instabilities in the plasma. These instabilities, the growth kinetics and the structure of the dust cloud, are compared by using two different gases: argon and krypton.

  10. Sputtering of CaF2 Thin Films

    NASA Astrophysics Data System (ADS)

    Pandey, Ratnesh K.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

    2011-07-01

    In the present work CaF2 thin films of different thicknesses deposited on Si substrate have been irradiated with 120 MeV Ag ions with equilibrium charge state and electronic sputtering yield as well as emission of smaller particles/nanoclusters has been studied through Elastic Recoil Detection Analysis (ERDA) and Transmission Electron Microscopy (TEM) respectively. The observed results show maximum sputtering yield at smallest thickness and also nanostructure formation for that thickness has been observed through TEM.

  11. Stress reduction in ion beam sputtered mixed oxide films.

    PubMed

    Pond, B J; Debar, J I; Carniglia, C K; Raj, T

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO(2)) and silica (SiO(2)) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica. PMID:20555602

  12. Stress reduction in ion beam sputtered mixed oxide films

    SciTech Connect

    Pond, B. J.; DeBar, J. I.; Carniglia, C. K.; Raj, T.

    1989-07-15

    Thin films deposited by ion beam sputtering typically have a high compressive stress. This paper demonstrates that this stress can be reduced by cosputtering two materials. Thin film mixtures of zirconia (ZrO/sub 2/) and silica (SiO/sub 2/) were prepared with a range of compositions using ion beam sputtering. The refractive index was found to vary almost linearly with composition. The large stress observed in zirconia films was found to be reduced significantly by the addition of silica.

  13. Sputtering of ices in the outer solar system

    SciTech Connect

    Johnson, R.E.

    1996-01-01

    Exploration of the outer solar system has led to studies in a new area of physics: electronically induced sputtering of low-temperature, condensed-gas solids (ices). Many of the icy bodies in the outer solar system were found to be bombarded by relatively intense fluxes of ions and electrons, causing both changes in their optical reflectance and ejection (sputtering) of molecules from their surfaces. The small cohesive energies of the condensed-gas solids afford relatively large sputtering rates from the electronic excitations produced in the solid by fast ions and electrons. Such sputtering produces an ambient gas about an icy body, often the source of the local plasma. This colloquium outlines the physics of the sputtering of ices and its relevance to several outer-solar-system phenomena: the sputter-produced plasma trapped in Saturn{close_quote}s magnetosphere; the O{sub 2} atmosphere on Europa; and optical absorption features such as SO{sub 2} in the surface of Europa and O{sub 2} and, possibly, O{sub 3} in the surface of Ganymede. {copyright} {ital 1996 The American Physical Society.}

  14. XPS Study of Plasma- and Argon Ion-Sputtered Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Kliss, Mark (Technical Monitor)

    1997-01-01

    The similarity of plasma-polymerized tetrafluoroethylene (PPTFE) and the fluoropolymer film deposited by rf (radio frequency) plasma sputtering (SPTFE) of polytetrafluoroethylene (PTFE), noted earlier in the literature, has been reconfirmed. FT-IR (Fourier Transform Infrared), XPS (X ray Photoelectron Spectroscopy) and UV (ultraviolet) spectroscopy has been employed in apparently the first study to involve preparation of PPTFE and SPTFE in the same reactor and under comparable low-power plasma conditions. Most of the work concerned the use of He or Ar as sputtering gas, but some runs were also carried out with the other rare gases Ne, Kr and Xe. The C1s XPS spectra of SPTFE films displayed a relatively higher content of CF2 groups, and yielded higher F/C (fluorine / carbon) ratios, than PPTFE films, while the SPTFE films were somewhat more transparent in the UV than PPTFE. The F/C ratios for SPTFE were essentially independent of the rare gas used for sputtering. Increasing rf power from 10 to 50 W for Xe plasma-sputtering of PTFE resulted in successively lower F/C ratios (1.55 to 1.21), accompanied by sputtering of the glass reactor occurring at 40 W and above. Some limited XPS, FT-IR and UV data are presented on Ar ion-sputtered PTFE.

  15. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  16. Negative-ion states

    SciTech Connect

    Compton, R.N.

    1982-01-01

    In this brief review, we discuss some of the properties of atomic and molecular negative ions and their excited states. Experiments involving photon reactions with negative ions and polar dissociation are summarized. 116 references, 14 figures.

  17. Negative ion generator

    DOEpatents

    Stinnett, R.W.

    1984-05-08

    A negative ion generator is formed from a magnetically insulated transmission line having a coating of graphite on the cathode for producing negative ions and a plurality of apertures on the opposed anode for the release of negative ions. Magnetic insulation keeps electrons from flowing from the cathode to the anode. A transverse magnetic field removes electrons which do escape through the apertures from the trajectory of the negative ions. 8 figs.

  18. Negative ion generator

    DOEpatents

    Stinnett, Regan W.

    1984-01-01

    A negative ion generator is formed from a magnetically insulated transmission line having a coating of graphite on the cathode for producing negative ions and a plurality of apertures on the opposed anode for the release of negative ions. Magnetic insulation keeps electrons from flowing from the cathode to the anode. A transverse magnetic field removes electrons which do escape through the apertures from the trajectory of the negative ions.

  19. [Negative symptoms: which antipsychotics?].

    PubMed

    Maurel, M; Belzeaux, R; Adida, M; Azorin, J-M

    2015-12-01

    Treating negative symptoms of schizophrenia is a major issue and a challenge for the functional and social prognosis of the disease, to which they are closely linked. First- and second-generation antipsychotics allow a reduction of all negative symptoms. The hope of acting directly on primary negative symptoms with any antipsychotic is not supported by the literature. However, the effectiveness of first- and second-generation antipsychotics is demonstrated on secondary negative symptoms. PMID:26776390

  20. Sentential Negation in English

    ERIC Educational Resources Information Center

    Mowarin, Macaulay

    2009-01-01

    This paper undertakes a detailed analysis of sentential negation in the English language with Chomsky's Government-Binding theory of Transformational Grammar as theoretical model. It distinguishes between constituent and sentential negation in English. The essay identifies the exact position of Negation phrase in an English clause structure. It…

  1. Sputtered coatings for protection of spacecraft polymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.

    1983-01-01

    Kapton polyimide oxidizes at significant rates (4.3x10(-24) gram/incident oxygen atom) when exposed in low Earth orbit to the ram atomic oxygen flux. Ion beam sputter deposited thin films of Al2O3 and SiO2 as well as a codeposited mixture of predominantly SiO2 with a small amount of polytetrafluoroethylene were evaluated and found to be effective in protecting Kapton from oxidation in both laboratory plasma ashing tests as well as in space on board shuttle flight STS-8. A protective film of or = 96 percent SiO2 and or = 4 percent polytetrafluoroethylene was found to be very flexible compared to the pure metal oxide coatings and resulted in mass loss rates that were 0.2 percent of that of the unprotected Kapton. The optical properties of Kapton for wavelengths investigated between 0.33 and 2.2 microns were not significantly altered by the presence of the coatings or changed by exposure of the coated Kapton to the low Earth orbital ram environment.

  2. Sputtered Layered Synthetic Microstruture (LSM) Dispersion Elements

    NASA Astrophysics Data System (ADS)

    Barbee, Troy W.

    1981-10-01

    The opportunities offered by engineered synthetic multilayer dispersion elements for x-rays have been recognized since the earliest days of x-ray diffraction analysis. In this paper, application of sputter deposition tehnology to the synthesis of Layered Synthetic Microstructure (LSM's) of sufficient quality or use as x-ray dispersion elements is discussed. It will be shown that high efficiency, controllble bandwidth dispersion elements, with d spacings varying from 15 Å to 180 Å, may be synthesized onto both mechanically stiff and flexible substrtes. Multilayer component materials include tungten, niobium, molybdenum, titanium, vanadium, and silicon layers separated by carbon layers. Experimental observations of peak reflectivity in first order, integrated reflectivity in first order, and diffraction performance at selected photon energies in the range, 100 to 15000 eV, will be reported and compared to theory. Emphasis is placed on results giving information concerning limiting structural characteristics of these LSM's. It will be shown that the observed behavior is in accord with theory, both kinematic and dynamic regimes being clearly observed. In addition, the mosaic spread of these LSM's is not detectable, indicatig that they are perfect structures. A consistent explanation of these experimental results indicates that roughness at the interfaces between constituent layers is the structural characteristic currently limiting diffracting behavior.

  3. Simulation of coupled sputter-diffusion effects

    NASA Astrophysics Data System (ADS)

    von Toussaint, U.; Mutzke, A.; Sugiyama, K.; Schwarz-Selinger, T.

    2016-02-01

    The simultaneous effects of sputtering, implantation and solid-state diffusion determine the surface profiles of mixed-material systems under ion-bombardment at elevated temperatures due to the enhanced atomic mobility. To simulate the joint processes the Monte Carlo code SDTrimSP for the simulation of the ion-solid interaction has been augmented by a diffusion model for solid-state diffusion. The combined model has been applied to a tungsten-iron system under deuterium bombardment as model system for EUROFER. The simulation results reveal a strong dependence of the surface profile on initial tungsten concentration, ion energy, temperature and fluence but also on the impinging flux, a parameter which is often not appropriately taken into account. For reactor relevant parameters of low-energy (200 eV) deuterium fluxes of {10}21{at} {{{m}}}-2 {{{s}}}-1 at 873 K a tungsten-iron system exhibits an increase of the tungsten surface concentration from initially 1% by a factor of more than 20, which drops at lower fluxes.

  4. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Siegel, Jakub; Krajcar, Robert; Kolská, Zdeňka; Hnatowicz, Vladimír; Švorčík, Václav

    2011-11-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness.

  5. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    PubMed Central

    2011-01-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness. PMID:22078024

  6. Photochromic silver nanoparticles fabricated by sputter deposition

    SciTech Connect

    Okumu, J.; Dahmen, C.; Sprafke, A.N.; Luysberg, M.; Plessen, G. von; Wuttig, M.

    2005-05-01

    In this study a simple route to preparing photochromic silver nanoparticles in a TiO{sub 2} matrix is presented, which is based upon sputtering and subsequent annealing. The formation of silver nanoparticles with sizes of some tens of nanometers is confirmed by x-ray diffraction and transmission electron microscopy. The inhomogeneously broadened particle-plasmon resonance of the nanoparticle ensemble leads to a broad optical-absorption band, whose spectral profile can be tuned by varying the silver load and the annealing temperature. Multicolor photochromic behavior of this Ag-TiO{sub 2} system upon irradiation with laser light is demonstrated and discussed in terms of a particle-plasmon-assisted electron transfer from the silver nanoparticles to TiO{sub 2} and subsequent trapping by adsorbed molecular oxygen. The electron depletion in the nanoparticles reduces the light absorption at the wavelength of irradiation. A gradual recovery of the absorption band is observed after irradiation, which is explained with a slow thermal release of electrons from the oxygen trapping centers and subsequent capture into the nanoparticles. The recovery can be accelerated by ultraviolet irradiation; the explanation for this observation is that electrons photoexcited in the TiO{sub 2} are captured into the nanoparticles and restore the absorption band.

  7. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  8. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  9. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  10. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  11. Pressureless Bonding Using Sputtered Ag Thin Films

    NASA Astrophysics Data System (ADS)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  12. The role of surface microstructure in the sputtering of graphite

    SciTech Connect

    Youchison, D.L.; Nahemow, M.D. ); McGrath, R.T. ); Baratta, A.J. )

    1991-05-01

    Extensive exposure to tokamak plasmas may result in significant alterations to the surface microstructure of graphite plasma-facing components. A change in microstructure from a commercial isotropic graphite to an amorphous carbon film may produce a significant change in the total sputtering yield and the level of plasma contamination. To investigate this sensitivity to surface microstructure, sputtering experiments on a variety of graphites with various surface structures were performed using the ion--surface interaction system (ISIS).{sup 1} ISIS is a computerized ion beam sputtering system equipped with twin quartz crystal microbalances capable of simultaneously monitoring both sputtering and redeposition of the beam target material. ISIS was used to obtain sputtering data on two orientations of pyrolytic graphite at seven energies between 100 eV and 10 keV. Helium bombardment perpendicular to the prism plane produced yields 2 to 7 times higher than on the basal plane. Proton bombardment perpendicular to the prism plane produced yields 45% higher than those on the basal plane. Amorphous graphite films produced from Poco AXF-5Q and Union Carbide ATJ graphites using an argon radio-frequency (rf) plasma discharge were also irradiated. Sputtering yields on the amorphous films were as much as 50% to an order of magnitude higher than those measured on commercial bulk samples. Pre and post-irradiation scanning electron microscopy of selected targets was performed to monitor surface microstructure. A structural mechanism responsible for the magnitude of physical sputtering is suggested, and an effective surface binding energy is introduced to quantify this structural dependence.

  13. Swift heavy ion induced changes in magnetization of cobalt thin films

    NASA Astrophysics Data System (ADS)

    Attri, Asha; Nair, Lekha

    2016-05-01

    The effects of 45 MeV Li3+ ions and 100 MeV O7+ ions irradiation on magnetic properties of nanoparticles of 25 nm Cobalt thin films, synthesized by e-beam sputtering have been studied. Significant changes in the hysteresis loop are observed with different irradiating fluence, which may be attributed to formation of cluster of defects in the nano-crystalline samples due to swift heavy ion (SHI) irradiation along with the distortion in the lattice parameter.

  14. Efficient cesiation in RF driven surface plasma negative ion source

    NASA Astrophysics Data System (ADS)

    Belchenko, Yu.; Ivanov, A.; Konstantinov, S.; Sanin, A.; Sotnikov, O.

    2016-02-01

    Experiments on hydrogen negative ions production in the large radio-frequency negative ion source with cesium seed are described. The system of directed cesium deposition to the plasma grid periphery was used. The small cesium seed (˜0.5 G) provides an enhanced H- production during a 2 month long experimental cycle. The gradual increase of negative ion yield during the long-term source runs was observed after cesium addition to the source. The degraded H- production was recorded after air filling to the source or after the cesium washing away from the driver and plasma chamber walls. The following source conditioning by beam shots produces the gradual recovery of H- yield to the high value. The effect of H- yield recovery after cesium coverage passivation by air fill was studied. The concept of cesium coverage replenishment and of H- yield recovery due to sputtering of cesium from the deteriorated layers is discussed.

  15. Efficient cesiation in RF driven surface plasma negative ion source.

    PubMed

    Belchenko, Yu; Ivanov, A; Konstantinov, S; Sanin, A; Sotnikov, O

    2016-02-01

    Experiments on hydrogen negative ions production in the large radio-frequency negative ion source with cesium seed are described. The system of directed cesium deposition to the plasma grid periphery was used. The small cesium seed (∼0.5 G) provides an enhanced H(-) production during a 2 month long experimental cycle. The gradual increase of negative ion yield during the long-term source runs was observed after cesium addition to the source. The degraded H(-) production was recorded after air filling to the source or after the cesium washing away from the driver and plasma chamber walls. The following source conditioning by beam shots produces the gradual recovery of H(-) yield to the high value. The effect of H(-) yield recovery after cesium coverage passivation by air fill was studied. The concept of cesium coverage replenishment and of H(-) yield recovery due to sputtering of cesium from the deteriorated layers is discussed. PMID:26932015

  16. Effect of sputtering target's grain size on the sputtering yield, particle size and coercivity (Hc) of Ni and Ni20Al thin films

    NASA Astrophysics Data System (ADS)

    Reza, M.; Sajuri, Z.; Yunas, J.; Syarif, J.

    2016-02-01

    Researches on magnetic thin films concentrated mainly on optimizing the sputtering parameters to obtain the desired thin film's properties. However, the effect of the sputtering target's properties towards the thin film's properties is not well established. This study is focused on analysing the effect of sputtering target's grain size towards the sputtering yield, particle size and the magnetic coercivity (Hc) of thin film. Two sets of sputtering targets; pure Ni (magnetic) and Ni20Al (at.%) (non-magnetic) were prepared. Each target has 2 sets of samples with different grain sizes; (a) 30 to 50μm and (b) 80 to 100μm. Thin films from each target were sputtered onto glass substrates under fixed sputtering parameters. The initial results suggested that the sputtering target's grain size has significant effect on the thin film's sputtering yield, particle size and Hc. Sputtering target with smaller grain size has 12% (pure Ni) to 60% (Ni20Al) higher sputtering yield, which produces thin films with smaller particle size and larger Hc value. These initial findings provides a basis for further magnetic thin film research, particularly for the seed layer in hard disk drive (HDD) media, where seed layer with smaller particle size is essential in reducing signal-to-noise ratio (SNR).

  17. Sputter deposition of nanocrystalline beta-SiC films and molecular dynamics simulations of the sputter process.

    PubMed

    Ziebert, Carlos; Ye, Jian; Ulrich, Sven; Prskalo, Alen-Pilip; Schmauder, Siegfried

    2010-02-01

    Thin nanocrystalline films of silicon carbide (SiC) have been deposited on Si substrates by rf magnetron sputtering in pure Ar atmosphere. Simultaneously classical molecular dynamics (MD) simulations of sputtering of beta-SiC by Ar atoms were performed using IMD and Materials Explorer software with a combination of the Tersoff and the Ziegler-Biersack-Littmark (ZBL) potential in order to get more insight into the sputter process. In experiments the bias voltage (0 to -40 V) has been varied at constant substrate temperature of 900 degrees C to investigate the influence on the composition, the constitution and the mechanical properties of crystalline beta-SiC films. At second the substrate temperature has been varied between 900 degrees C and 100 degrees C to find the minimum substrate temperature that is needed to get nanocrystalline beta-SiC under the applied sputter conditions (ceramic SiC target, 300 W rf power, 18 cm target-substrate distance, 50 sccm Ar gas flow, 0.26 Pa total gas pressure). The films have been characterized by electron probe micro-analysis (EPMA), X-ray diffraction (XRD), Raman spectroscopy and atomic force microscopy (AFM). Hardness and residual stress have been investigated by nanoindentation and wafer bending. In the MD simulations the sputter yield was determined as a function of the energy of the incident Ar atoms (in the interesting range for sputter deposition, i.e., 50-1000 eV). To our knowledge this is the first time that the sputter yield of a SiC target was determined as a function of the energy of the incident Ar atoms in the low energy range by using MD simulations and compared with experimental results. PMID:20352766

  18. Reconstructing accurate ToF-SIMS depth profiles for organic materials with differential sputter rates.

    PubMed

    Taylor, Adam J; Graham, Daniel J; Castner, David G

    2015-09-01

    To properly process and reconstruct 3D ToF-SIMS data from systems such as multi-component polymers, drug delivery scaffolds, cells and tissues, it is important to understand the sputtering behavior of the sample. Modern cluster sources enable efficient and stable sputtering of many organics materials. However, not all materials sputter at the same rate and few studies have explored how different sputter rates may distort reconstructed depth profiles of multicomponent materials. In this study spun-cast bilayer polymer films of polystyrene and PMMA are used as model systems to optimize methods for the reconstruction of depth profiles in systems exhibiting different sputter rates between components. Transforming the bilayer depth profile from sputter time to depth using a single sputter rate fails to account for sputter rate variations during the profile. This leads to inaccurate apparent layer thicknesses and interfacial positions, as well as the appearance of continued sputtering into the substrate. Applying measured single component sputter rates to the bilayer films with a step change in sputter rate at the interfaces yields more accurate film thickness and interface positions. The transformation can be further improved by applying a linear sputter rate transition across the interface, thus modeling the sputter rate changes seen in polymer blends. This more closely reflects the expected sputtering behavior. This study highlights the need for both accurate evaluation of component sputter rates and the careful conversion of sputter time to depth, if accurate 3D reconstructions of complex multi-component organic and biological samples are to be achieved. The effects of errors in sputter rate determination are also explored. PMID:26185799

  19. Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering

    SciTech Connect

    Rahamathunnisa, M.; Cameron, D. C.

    2009-03-15

    The ion fluxes and energies which impinge on the substrate during the deposition of chromium nitride by asymmetric bipolar pulsed dc reactive magnetron sputtering have been analyzed using energy resolved mass spectrometry. It has been found that there is a remarkable increase in ion flux at higher pulse frequencies and that the peak ion energy is directly related to the positive voltage overshoot of the target voltage. The magnitude of the metal flux depositing on the substrate is consistent with a 'dead time' of {approx}0.7 {mu}s at the start of the on period. The variation of the ion flux with pulse frequency has been explained by a simple model in which the ion density during the on period has a large peak which is slightly delayed from the large negative voltage overshoot which occurs at the start of the on pulse due to increased ionization at that time. This is consistent with the previously observed phenomena in pulsed sputtering.

  20. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    SciTech Connect

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe; Feng, Feng Lu, Hongyuan; Qu, Timing; Zhu, Yuping; Huang, Rongxia

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  1. Measurements and Modelling of Sputtering Rates with Low Energy Ions

    NASA Astrophysics Data System (ADS)

    Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

    1996-10-01

    The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

  2. Electronic excitation of condensed CO: Sputtering and chemical change

    NASA Astrophysics Data System (ADS)

    Chrisey, D. B.; Brown, W. L.; Boring, J. W.

    1990-01-01

    We have bombarded condensed CO "ice" films with keV and MeV ions at low temperatures to investigate the physical sputtering mechanisms and chemical modifications of the ice. The sputtering yield measured for keV and MeV H + and He + ions indicates that the yield has a quadratic dependence on the electronic stopping power of the ions. Energy spectra of CO molecules sputtered by bombardment with 53 keV He + and 34 keV Ar + ions are very similar and show a collision-cascade-like behavior. We explore the origin of this quadratic dependence in terms of several models proposed for sputtering by electronic excitation and conclude that the quadratic dependence is intrinsic to the electronic relaxation process for CO. RBS measurements of the residue produced from sputtering various thicknesses of the initial CO film (˜ (3-25) × 10 17 CO/cm 2) indicate the production of the residue is approximately proportional to the initial thickness, accounts for ˜ 2% of the initial mass, and has a stoichiometric composition of approximately C 3O. The production and composition of the residue is discussed in terms of existing mechanisms for the radiolysis of gas phase CO.

  3. Sputtering of a metal nanofoam by Au ions

    NASA Astrophysics Data System (ADS)

    Anders, Christian; Bringa, Eduardo M.; Urbassek, Herbert M.

    2015-01-01

    Porous materials, such as nanofoams, may react differently to irradiation than compact targets. This is caused by the influence of the cavities on the evolution of collision cascades, but also by the differing heat conduction which affects the spike phase. Using molecular dynamics simulation we study the sputtering of a Au nanofoam by 10 keV Au projectiles, and compare to the sputtering of a compact Au target. These bombardment conditions lead to a strong contribution of spikes to the sputtering process. We find the foam to sputter considerably less than the compact target; the open structure of the foam prevents the build-up of strong collision spike regions at the surface, which are the major source of sputtering in the compact target. Also emission takes a longer time scale in the foam, as particles need to travel longer pathways to be emitted. On the other hand, the molten phase is more extended in the foam and also exists for a longer time; this is caused by the reduced heat conductivity in this material.

  4. Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

    PubMed

    Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

    2016-08-01

    Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. PMID:26087375

  5. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  6. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  7. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  8. Negative Ion Density Fronts

    SciTech Connect

    Igor Kaganovich

    2000-12-18

    Negative ions tend to stratify in electronegative plasmas with hot electrons (electron temperature Te much larger than ion temperature Ti, Te > Ti ). The boundary separating a plasma containing negative ions, and a plasma, without negative ions, is usually thin, so that the negative ion density falls rapidly to zero-forming a negative ion density front. We review theoretical, experimental and numerical results giving the spatio-temporal evolution of negative ion density fronts during plasma ignition, the steady state, and extinction (afterglow). During plasma ignition, negative ion fronts are the result of the break of smooth plasma density profiles during nonlinear convection. In a steady-state plasma, the fronts are boundary layers with steepening of ion density profiles due to nonlinear convection also. But during plasma extinction, the ion fronts are of a completely different nature. Negative ions diffuse freely in the plasma core (no convection), whereas the negative ion front propagates towards the chamber walls with a nearly constant velocity. The concept of fronts turns out to be very effective in analysis of plasma density profile evolution in strongly non-isothermal plasmas.

  9. Ion Mobility Spectrometry of Heavy Metals.

    PubMed

    Ilbeigi, Vahideh; Valadbeigi, Younes; Tabrizchi, Mahmoud

    2016-07-19

    A simple, fast, and inexpensive method was developed for detecting heavy metals via the ion mobility spectrometry (IMS) in the negative mode. In this method, Cl(-) ion produced by the thermal ionization of NaCl is employed as the dopant or the ionizing reagent to ionize heavy metals. In practice, a solution of mixed heavy metals and NaCl salts was directly deposited on a Nichrome filament and electrically heated to vaporize the salts. This produced the IMS spectra of several heavy-metal salts, including CdCl2, ZnSO4, NiCl2, HgSO4, HgCl2, PbI2, and Pb(Ac)2. For each heavy metal (M), one or two major peaks were observed, which were attributed to M·Cl(-) or [M·NaCl]Cl(-)complexes. The method proved to be useful for the analysis of mixed heavy metals. The absolute detection limits measured for ZnSO4 and HgSO4 were 0.1 and 0.05 μg, respectively. PMID:27321408

  10. Influence of microstructure and chemical composition of sputter deposited TiO2 thin films on in vitro bioactivity.

    PubMed

    Lilja, Mirjam; Genvad, Axel; Astrand, Maria; Strømme, Maria; Enqvist, Håkan

    2011-12-01

    Functionalisation of biomedical implants via surface modifications for tailored tissue response is a growing field of research. Crystalline TiO(2) has been proven to be a bone bioactive, non-resorbable material. In contact with body fluids a hydroxyapaptite (HA) layer forms on its surface facilitating the bone contact. Thus, the path of improving biomedical implants via deposition of crystalline TiO(2) on the surface is interesting to follow. In this study we have evaluated the influence of microstructure and chemical composition of sputter deposited titanium oxide thin films on the in vitro bioactivity. We find that both substrate bias, topography and the flow ratio of the gases used during sputtering affect the HA layer formed on the films after immersion in simulated body fluid at 37°C. A random distribution of anatase and rutile crystals, formed at negative substrate bias and low Ar to O(2) gas flow ratios, are shown to favor the growth of flat HA crystal structures whereas higher flow ratios and positive substrate bias induced growth of more spherical HA structures. These findings should provide valuable information when optimizing the bioactivity of titanium oxide coatings as well as for tailoring process parameters for sputtered-based production of bioactive titanium oxide implant surfaces. PMID:22052535

  11. The addiction to negativity.

    PubMed

    Lane, R C; Hull, J W; Foehrenbach, L M

    1991-01-01

    In this paper, we have described a type of resistance that has attracted increasing psychoanalytic attention in recent years. Patients exposed to intense negativity during early life may develop an addiction to negative experience as adolescents and adults, and this may constitute a central organizing feature of their personality. In almost all patients, however, some moments of negativity may be observed. We have traced the developmental origins of an attachment to negativity, drawing especially on psychoanalytic investigations of preoedipal pathology. Manifestations and derivatives of early negativity include anhedonia, attachment to physical pain, fear of success, masochism, deprivation of self and others, and negative voyeurism. In discussing the dynamic functions of negativity, we place particular emphasis on two motives: the patient's desires for revenge against early objects that have been a source of deprivation and frustration; and the defensive function of negativity in helping to express as well as ward off dangerous wishes to merge with the object. Deviant forms of autoerotism are likely to be used by these patients to deal with the reactivation of early experiences of neglect and rejection. When negativity is used as a defense or method of relating to others it can lead to a severe disruption of the psychotherapeutic relationship. We have reviewed suggestions for the management of extreme negativity in treatment. Resolution of the therapist's countertransference reactions, especially induced feelings of frustration, rage, and helplessness, is crucial. Emphasis also has been placed on the patient's desires for revenge against self and object, and the manner in which these may be understood and eventually resolved. Only when patient and therapist begin to investigate the adaptive functions of extreme negativity can this pathological symptom be resolved and the patient's awareness of self and sense of autonomy be enhanced. PMID:1763149

  12. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  13. Anion formation in sputter ion sources by neutral resonant ionization.

    PubMed

    Vogel, J S

    2016-02-01

    Focused Cs(+) beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm(2) C(-) current density compared to the 20 μA/mm(2) from a 1 mm recess. PMID:26931912

  14. Composition and structure of sputter deposited erbium hydride thin films

    SciTech Connect

    ADAMS,DAVID P.; ROMERO,JUAN A.; RODRIGUEZ,MARK A.; FLORO,JERROLD A.; BANKS,JAMES C.

    2000-05-10

    Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.

  15. Hardness of CNx films deposited by MCECR plasma sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Li, Junpeng; Mi, Qian; Ma, Weihong; Yan, Yixin; Liang, Haifeng

    2007-12-01

    The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N II plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N II ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10 -2Pa, and the Ar/N II ratio is 9/1.

  16. Analytical and numerical depth resolution functions in sputter profiling

    NASA Astrophysics Data System (ADS)

    Hofmann, S.; Liu, Y.; Wang, J. Y.; Kovac, J.

    2014-09-01

    Quantification of sputter depth profiles is frequently done by fitting the convolution integral over concentration and depth resolution function to the experimental results. For a thin delta layer, there exist analytical solutions. The analytical depth resolution functions of two popular approaches, that of the Mixing-Roughness-Information depth (MRI) model and that of Dowsett and coworkers are compared. It is concluded that the analytical depth resolution function of the MRI model gives the correct location of a buried delta layer with respect to the measured profile, and a clear description of the information depth in AES, XPS and SIMS. Both analytical solutions can be extended to larger layer thickness. But they are less flexible with respect to physical parameters which are not constant with concentration or sputtered depth, such as detection sensitivity, atomic mixing or preferential sputtering. For these cases, numerical solutions have to be used.

  17. Highly conducting ZnSe films by reactive magnetron sputtering

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.

    1986-01-01

    This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

  18. Magnetron discharge sputtering for fabrication of nanogradient optical coatings

    NASA Astrophysics Data System (ADS)

    Volpian, O. D.; Kuzmichev, A. I.; Ermakov, G. F.; Krikunov, A. I.; Obod, Yu A.; Silin, N. V.; Shkatula, S. V.

    2015-11-01

    The technology of the middle frequency pulse reactive magnetron sputtering for fabrication of nanogradient optical coatings with smooth variation of refractive index was developed and studied. The technology is based on programmable motion of a substrate over two magnetrons with targets of different materials. The feature of the deposition process is a constant composition of reactive gas medium and an invariable magnetron operation mode. To realize this technology, an automatic computer-controlled sputtering system additionally comprising a gas discharge activator of reactive gas (oxygen) and an in situ optical monitor- spectrovisor has been built. The dielectric oxide-based nanogradient coatings of photon-barrier type were successfully fabricated. The obtained results confirm the high potential of the middle frequency pulse reactive magnetron sputtering of silicon and metal targets for fabrication of nanogradient dielectric optical coatings with excellent properties.

  19. High-temperature sputtered coatings for optical fiber

    NASA Astrophysics Data System (ADS)

    Rogers, Harvey N.

    1993-02-01

    We have developed a magnetron sputter coating method to continuously coat silica optical fibers with a dual layer coating of Inconel 625 alloy and platinum. The coating process is performed on-line as the fiber is drawn to minimize the rapid strength degradation of the silica due to attack by moisture in the air. Because of the modular design of the sputter equipment, the process is well suited for the deposition of a wide variety of metals and is readily adapted for scale-up. Multimode optical fibers were produced with coatings up to 0.5 microns in thickness consisting of an adhesion layer of Inconel and an outer layer of platinum. The coatings are adherent and remain mechanically intact after thermal cycling between room temperature and 2000 degree(s)F in vacuum. Approximate tensile strengths of 145 to 290 Kpse have been measured. These attributes make this sputter coated fiber a promising candidate for use in high temperature environments.

  20. Physics of arcing, and implications to sputter deposition

    SciTech Connect

    Anders, Andre

    2005-03-15

    Arc and glow discharges are defined based on their cathode processes. Arcs are characterized by collective electron emission, which can be stationary with hot cathodes (thermionic arcs), or non-stationary with cold cathodes (cathodic arcs). A brief review on cathodic arc properties serves as the starting point to better understand arcing phenomena in sputtering. Although arcing occurs in both metal and reactive sputtering, it is more of an issue in the reactive case. Arcing occurs if sufficiently high field strength leads to thermal runaway of an electron emission site. The role of insulating layers and surface potential adjustment through current leakage is highlighted. In the situation of magnetron sputtering with ''racetrack'', the need for a model with two spatial dimensions is shown. In many cases, arcing is initiated by breakdown of dielectric layers and inclusions. It is most efficiently prevented if formation and excessive charge-up of dielectric layers and inclusions can be avoided.

  1. Anion formation in sputter ion sources by neutral resonant ionization

    NASA Astrophysics Data System (ADS)

    Vogel, J. S.

    2016-02-01

    Focused Cs+ beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm2 C- current density compared to the 20 μA/mm2 from a 1 mm recess.

  2. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  3. Mechanical properties of sputtered silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Vila, M.; Cáceres, D.; Prieto, C.

    2003-12-01

    Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young's modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8-23 and 100-210 GPa, respectively. Additionally, Fourier-transform infrared spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction were used to characterize samples with respect to different types of bonding, atomic concentrations, and structure of the films to explain the variation of mechanical properties. The hardness and Young's modulus were determined as a function of film composition and structure and conditions giving the hardest film were found. Additionally, a model that assumes a series coupling of the elastic components, corresponding to the Si-O and Si-N bonds present in the sample has been proposed to explain the observed variations of hardness and Young's modulus.

  4. Ion beam sputter target and method of manufacture

    SciTech Connect

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  5. Heavy quark masses

    NASA Technical Reports Server (NTRS)

    Testa, Massimo

    1990-01-01

    In the large quark mass limit, an argument which identifies the mass of the heavy-light pseudoscalar or scalar bound state with the renormalized mass of the heavy quark is given. The following equation is discussed: m(sub Q) = m(sub B), where m(sub Q) and m(sub B) are respectively the mass of the heavy quark and the mass of the pseudoscalar bound state.

  6. The Evolution of Negation.

    ERIC Educational Resources Information Center

    Croft, William

    1991-01-01

    Discusses a method for extrapolation of diachronic processes from synchronic states, the dynamicization of synchronic typologies, to propose a hitherto unobserved historical source for markers of verbal negation, namely irregular negative existential predicate forms. Explanations are proposed for the occurrence of the attested processes in this…

  7. Learning from Negative Morality.

    ERIC Educational Resources Information Center

    Oser, Fritz K.

    1996-01-01

    Identifies and discusses the elements and applications of learning from negative morality. Negative morality refers to the experience of learning from mistakes thereby creating a body of personal knowledge about "what not to do." This knowledge not only protects individuals but steers them to the right behavior. (MJP)

  8. Mutagenicity of heavy metals

    SciTech Connect

    Wong, P.K.

    1988-04-01

    Certain heavy metals are required, as trace elements for normal cellular functions. However, heavy metals are toxic to cells once their levels exceed their low physiological values. The toxicity of heavy metals on microorganisms, and on animals has been well-documented. These interactions may induce the alteration of the primary as well as secondary structures of the DNA and result in mutation(s). The present communication reports the results in determining the mutagenicity and carcinogenicity of ten heavy metals commonly found in polluted areas by using the Salmonella/mammalian-microsome mutagenicity test.

  9. On Negative Mass

    NASA Astrophysics Data System (ADS)

    Belletête, Jonathan; Paranjape, M. B.

    2013-06-01

    The Schwarzschild solution to the matter free, spherically symmetric Einstein equations has one free parameter, the mass. But the mass can be of any sign. What is the meaning of the negative mass solutions? The answer to this question for the case of a pure Schwarzschild negative mass black solution is still elusive, however, in this essay, we will consider negative mass solutions within a Schwarzschild-de Sitter geometry. We show that there exist reasonable configurations of matter, bubbles of distributions of matter, that satisfy the dominant energy condition everywhere, that are nonsingular and well behaved everywhere, but correspond to the negative mass Schwarzschild-de Sitter geometry outside the matter distribution. These negative mass bubbles could occur as the end state of a quantum tunneling transition.

  10. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  11. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

    SciTech Connect

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan; Jin, Ke; Du, Yingge; Neeway, James J.; Ryan, Joseph V.; Hu, Dehong; Zhang, Hongliang; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampillai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    For the first time, the use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass, SON68, and layered hole-perovskite oxide thin films were selected as model systems due to their fundamental and practical significance. Our study shows that if the size of analysis areas is same, the highest sputter rate of argon cluster sputtering can be 2-3 times faster than the highest sputter rates of oxygen or cesium sputtering. More importantly, high quality data and high sputter rates can be achieved simultaneously for argon cluster sputtering while this is not the case for cesium and oxygen sputtering. Therefore, for deep depth profiling of insulating samples, the measurement efficiency of argon cluster sputtering can be about 6-15 times better than traditional cesium and oxygen sputtering. Moreover, for a SrTiO3/SrCrO3 bi-layer thin film on a SrTiO3 substrate, the true 18O/16O isotopic distribution at the interface is better revealed when using the argon cluster sputtering source. Therefore, the implementation of an argon cluster sputtering source can significantly improve the measurement efficiency of insulating materials, and thus can expand the application of ToF-SIMS to the study of glass corrosion, perovskite oxide thin films, and many other potential systems.

  12. Low-temperature epitaxy of Ge films by sputter deposition.

    NASA Technical Reports Server (NTRS)

    Khan, I. H.

    1973-01-01

    It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

  13. Hollow metal target magnetron sputter type radio frequency ion source.

    PubMed

    Yamada, N; Kasuya, T; Tsubouchi, N; Wada, M

    2014-02-01

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure. PMID:24593636

  14. Lateral variation of target poisoning during reactive magnetron sputtering

    SciTech Connect

    Guettler, D.; Groetzschel, R.; Moeller, W.

    2007-06-25

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar/N{sub 2} atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  15. Realistic ice sputtering experiments for the surfaces of Galilean moons

    NASA Astrophysics Data System (ADS)

    Galli, A.; Pommerol, A.; Wurz, P.; Jost, B.; Scheer, J. A.; Vorburger, A.; Tulej, M.; Thomas, N.; Wieser, M.; Barabash, S.

    2015-10-01

    We use an existing laboratory facility for space hardware calibration in vacuum to study the impact of energetic ions on water ice. The experiment is intended to simulate the conditions on the surface of Jupiter's icy moons. The first results of hydrogen, oxygen, and sulphur ions sputtering a sample of porous salty ice confirmed extrapolations from previous sputtering experiments obtained at different impact angles for nonporous water ice [3]. Here, we present additional measurements for a larger range of ion impact angles and different ice samples.

  16. Off-axis sputter deposition of thin films

    SciTech Connect

    Capuano, L.A.; Newman, N. )

    1990-01-01

    Currently there are several techniques for making high Tc thin films, e.g., sputter deposition, laser ablation, coevaporation (including MBE), chemical vapor deposition and solution coating/pyrolysis. Of these techniques, the authors have demonstrated that high-pressure in-situ off-axis rf-magnetron sputter deposition is a simple, relatively inexpensive process capable of reproducibly yielding YBCO superconducting thin films with excellent surface resistance properties. This article describes the off-axis technique, the basic equipment requirements and the performance characteristics of high Tc superconductor films produced using this technique.

  17. Direct current sputtering of boron from boron/coron mixtures

    DOEpatents

    Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

    1994-01-01

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

  18. Direct current sputtering of boron from boron/boron mixtures

    DOEpatents

    Timberlake, J.R.; Manos, D.; Nartowitz, E.

    1994-12-13

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

  19. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  20. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  1. Highly aligned carbon nanotube arrays fabricated by bias sputtering

    NASA Astrophysics Data System (ADS)

    Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-05-01

    Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system.

  2. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  3. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  4. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  5. Advances in sputtered and ion plated solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1985-01-01

    The glow discharge or ion assisted vacuum deposition techniques, primarily sputtering and ion plating, have rapidly emerged and offer great potential to deposit solid lubricants. The increased energizing of these deposition processes lead to improved adherence and coherence, favorable morphological growth, higher density, and reduced residual stresses in the film. These techniques are of invaluable importance where high precision machines tribo-components require very thin, uniform lubricating films (0.2 m), which do not interface with component tolerances. The performance of sputtered MoS2 films and ion plated Au and Pb films are described in terms of film thickness, coefficient of friction, and wear lives.

  6. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties. PMID:27483857

  7. Nanoparticle formation and dusty plasma effects in DC sputtering discharge with graphite cathode

    NASA Astrophysics Data System (ADS)

    Michau, A.; Arnas, C.; Lombardi, G.; Bonnin, X.; Hassouni, K.

    2016-02-01

    We developed a model for the nucleation, growth and transport of carbon dust particles in a DC discharge. The carbon source comes from the sputtering of a graphite cathode resulting in the production of primary clusters and then of nanoparticles. We consider the ionic cluster growth as well as the particle growth and charging and the influence of both on the discharge equilibrium. We found that the discharge becomes electronegative for long duration when particle density reaches 109 cm-3 and particle size 45 nm. The corresponding transition modifies the electric field profile in the vicinity of the field reversal region in the negative glow. We then analyze the space and time evolution of the different discharge characteristics and the mechanisms involved in the discharge. We showed that particle density is governed by nucleation, coagulation and transport, while particle size is mainly governed by the deposition of the small neural clusters emitted at the cathode on the particle surface.

  8. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  9. Structural and nanomechanical characterization of niobium films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, X.; Cao, W. H.; Tao, X. F.; Ren, L. L.; Zhou, L. Q.; Xu, G. F.

    2016-05-01

    Nb thin films were deposited onto Si wafers by direct current (DC) magnetron sputtering at different deposition pressures. The microstructure and nanomechanical properties of Nb films were investigated by scanning electron microscope, X-ray diffractometer, transmission electron microscope, atomic force microscope and nanoindenter. The results revealed that the grain size, thickness, surface roughness, the reduced elastic modulus ( Er) and hardness ( H) values of Nb thin films increased at the pressure range of 0.61-0.68 Pa. Meanwhile, the porosity of Nb films decreased with the increase in deposition pressure. The lattice deformation of Nb thin films changed from negative to positive with the increase in deposition pressure. It is concluded that deposition pressure influences the microstructure and nanomechanical properties of Nb films.

  10. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Choudhary, R. K.; Mishra, S. C.; Mishra, P.; Limaye, P. K.; Singh, K.

    2015-11-01

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias.

  11. Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

    SciTech Connect

    Sethi, Guneet; Sunal, Paul; Horn, Mark W.; Lanagan, Michael T.

    2009-05-15

    Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2{theta} scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr{sub 2}O. When the sputtering oxygen content of these films is increased above 25%, monoclinic-ZrO{sub 2} phase is stabilized in the films and the deposition rate decreases. However, in the case of rf sputtering, an additional peak corresponding to tetragonal phase of ZrO{sub 2} is observed. The sputtering parameters were related to physical parameters such as sputtering mode, ion energy, and substrate temperature, which influence crystallinity.

  12. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  13. Time-of-flight secondary neutral & ion mass spectrometry using swift heavy ions

    NASA Astrophysics Data System (ADS)

    Breuer, L.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

    2015-12-01

    We report on a new time-of-flight (TOF) spectrometer designed to investigate sputtering phenomena induced by swift heavy ions in the electronic stopping regime. In this experiment, particular emphasis is put on the detection of secondary ions along with their emitted neutral counterparts in order to examine the ionization efficiency of the sputtered material. For the detection of neutral species, the system is equipped with a pulsed VUV laser for post-ionization of sputtered neutral atoms and molecules via single photon ionization at a wavelength of 157 nm (corresponding to 7.9 eV photon energy). For alignment purposes and in order to facilitate comparison to nuclear sputtering conditions, the system also includes a 5 keV Ar+ ion beam directed to the same sample area. The instrument has been added to the M1-branch beam line at the German accelerator facility in Darmstadt (GSI) and was tested with 4.8 MeV/u Au26+ ions impinging onto various samples including metals, salts and organic films. It is found that secondary ion and neutral spectra obtained under both bombardment conditions can be acquired in an interleaved manner throughout a single accelerator pulse cycle, thus making efficient use of valuable beam time. In addition, the keV ion beam can be intermittently switched to dc mode between subsequent data acquisition windows and accelerator pulses in order to ensure reproducible surface conditions. For the case of a dynamically sputter cleaned metal surface, comparison of secondary ion and neutral signals obtained under otherwise identical instrumental conditions reveals a nearly identical ionization probability of atoms emitted under electronic and nuclear sputtering conditions.

  14. Heavy-heartedness biases your weight perception.

    PubMed

    Min, Bora; Choi, Incheol

    2016-01-01

    Heavy-heartedness (light-heartedness), among more than two hundred metaphors related to the heart, indicates negative (positive) affects. Although these metaphors are generally understood rhetorically, this study explores whether there is any literal connection between either of these two states and one's perception of weight. Participants who recalled a heavy-heartening (vs. light-heartening) past event estimated more weight of an object (Study 1). While watching weightlifting and pole-vaulting competition clips, people in heavy-hearted (vs. light-hearted) states predicted that players' success is less likely (Study 2). However, this result was not observed while people in both states watched non-weight-related games, such as golf-putting and pool. The findings are congruous with embodied cognition theory and the role of metaphors in our life. PMID:26666503

  15. Kriging without negative weights

    SciTech Connect

    Szidarovszky, F.; Baafi, E.Y.; Kim, Y.C.

    1987-08-01

    Under a constant drift, the linear kriging estimator is considered as a weighted average of n available sample values. Kriging weights are determined such that the estimator is unbiased and optimal. To meet these requirements, negative kriging weights are sometimes found. Use of negative weights can produce negative block grades, which makes no practical sense. In some applications, all kriging weights may be required to be nonnegative. In this paper, a derivation of a set of nonlinear equations with the nonnegative constraint is presented. A numerical algorithm also is developed for the solution of the new set of kriging equations.

  16. Negative birefringent polyimide films

    NASA Technical Reports Server (NTRS)

    Harris, Frank W. (Inventor); Cheng, Stephen Z. D. (Inventor)

    1994-01-01

    A negative birefringent film, useful in liquid crystal displays, and a method for controlling the negative birefringence of a polyimide film is disclosed which allows the matching of an application to a targeted amount of birefringence by controlling the degree of in-plane orientation of the polyimide by the selection of functional groups within both the diamine and dianhydride segments of the polyimide which affect the polyimide backbone chain rigidity, linearity, and symmetry. The higher the rigidity, linearity and symmetry of the polyimide backbone, the larger the value of the negative birefringence of the polyimide film.

  17. Negative Halogen Ions for Fusion Applications

    SciTech Connect

    Grisham, L.R.; Kwan, J.W.; Hahto, S.K.; Hahto, S.T.; Leung, K.N.; Westenskow, G.

    2006-01-01

    Over the past quarter century, advances in hydrogen negative ion sources have extended the usable range of hydrogen isotope neutral beams to energies suitable for large magnetically confined fusion devices. Recently, drawing upon this experience, negative halogen ions have been proposed as an alternative to positive ions for heavy ion fusion drivers in inertial confinement fusion, because electron accumulation would be prevented in negative ion beams, and if desired, the beams could be photo-detached to neutrals. This paper reports the results of an experiment comparing the current density and beam emittance of Cl+ and Cl- extracted from substantially ion-ion plasmas with that of Ar+ extracted from an ordinary electron-ion plasma, all using the same source, extractor, and emittance scanner. At similar discharge conditions, the Cl- current was typically 85 – 90% of the positive chlorine current, with an e-/ Cl- ratio as low as seven without grid magnets. The Cl- was as much as 76% of the Ar+ current from a discharge with the same RF drive. The minimum normalized beam emittance and inferred ion temperatures of Cl+, Cl-, and Ar+ were all similar, so the current density and optical quality of Cl- appear as suitable for heavy ion fusion driver applications as a positive noble gas ion of similar mass. Since F, I, and Br should all behave similarly in an ion source, they should also be suitable as driver beams.

  18. Heavy-electron materials

    SciTech Connect

    Fisk, Z.; Ott, H.R.; Smith, J.L.

    1986-01-01

    De Haas-van Alphen results demonstrated the existence of a Fermi surface at sufficiently low temperature and show that the entire Fermi surface involves heavy electrons. The phase transitions in their heavy-electron state are discussed. These are either magnetic or superconducting. 38 refs., 6 figs., 2 tabs. (WRF)

  19. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information.

    PubMed

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan W; Jin, Ke; Du, Yingge; Neeway, James J; Ryan, Joseph V; Hu, Dehong; Zhang, Kelvin H L; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampilai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest. PMID:25953490

  20. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

    NASA Astrophysics Data System (ADS)

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan W.; Jin, Ke; Du, Yingge; Neeway, James J.; Ryan, Joseph V.; Hu, Dehong; Zhang, Kelvin H. L.; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampilai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest.

  1. Negative electrode composition

    DOEpatents

    Kaun, Thomas D.; Chilenskas, Albert A.

    1982-01-01

    A secondary electrochemical cell and a negative electrode composition for use therewith comprising a positive electrode containing an active material of a chalcogen or a transiton metal chalcogenide, a negative electrode containing a lithium-aluminum alloy and an amount of a ternary alloy sufficient to provide at least about 5 percent overcharge capacity relative to a negative electrode solely of the lithium-aluminum alloy, the ternary alloy comprising lithium, aluminum, and iron or cobalt, and an electrolyte containing lithium ions in contact with both of the positive and the negative electrodes. The ternary alloy is present in the electrode in the range of from about 5 percent to about 50 percent by weight of the electrode composition and may include lithium-aluminum-nickel alloy in combination with either the ternary iron or cobalt alloys. A plurality of series connected cells having overcharge capacity can be equalized on the discharge side without expensive electrical equipment.

  2. Logo and Negative Numbers.

    ERIC Educational Resources Information Center

    Strawn, Candace A.

    1998-01-01

    Describes LOGO's turtle graphics capabilities based on a sixth-grade classroom's activities with negative numbers and Logo programming. A sidebar explains LOGO and offers suggestions to teachers for using LOGO effectively. (LRW)

  3. Atomic negative ions

    SciTech Connect

    Brage, T.

    1991-01-01

    We review some of the recent progress in the studies of alkaline-earth, negative ions. Computations of autodetachment rates, electron affinities and transition wavelengths are discussed and some new and improved results are given.

  4. Atomic negative ions

    SciTech Connect

    Brage, T.

    1991-12-31

    We review some of the recent progress in the studies of alkaline-earth, negative ions. Computations of autodetachment rates, electron affinities and transition wavelengths are discussed and some new and improved results are given.

  5. Mutagenicity of heavy metals

    SciTech Connect

    Wong, P.K. )

    1988-05-01

    Certain heavy metals are required, as trace elements for normal cellular functions. However, heavy metals are toxic to cells once their levels exceed their low physiological values. The toxicity of heavy metals on microorganisms, on plants and on animals has been well-documented. These interactions may induce the alteration of the primary as well as secondary structures of the DNA and result in mutation(s). Though the rec assay with Bacillus subtilis and the reversion assay with Escherichia coli were used to assess the mutagenicity of some heavy metals, the present communication reports the results in determining the mutagenicity and carcinogenicity of ten heavy metals commonly found in polluted areas by using the Salmonella/mammalian-microsome mutagenicity test.

  6. Negative affixes in medical English.

    PubMed

    Dzuganova, B

    2006-01-01

    Many medical terms have negative meaning expressed by means of a negative prefix or suffix. The most frequently used negative prefixes are: a-, dis-, in-, non-, and un-. There is only one negative suffix -less (Ref. 15). PMID:17125069

  7. Near sputter-threshold GaSb nanopatterning

    SciTech Connect

    El-Atwani, Osman; Paul Allain, Jean; School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 ; Gonderman, Sean

    2013-09-14

    Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e.g., <10{sup 17} cm{sup −2}) and up to nanostructure saturation (e.g., ∼10{sup 18} cm{sup −2}). Low-energy irradiation is conducted for energies between 15–100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb is found to delay nanostructure formation and this is predominant at energies below 100 eV. In-situ quartz crystal microbalance measurements collect sputtered particles yielding the sputter rate at threshold energies indicating a correlation between erosion and surface composition consistent with recent theoretical models. Ion-induced segregation is also found and indicated by both compositional measurements of both the surface and the sputtered plume.

  8. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  9. Evaluation of residual stress in sputtered tantalum thin-film

    NASA Astrophysics Data System (ADS)

    Al-masha'al, Asa'ad; Bunting, Andrew; Cheung, Rebecca

    2016-05-01

    The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90-300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  10. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  11. Formation of metastable excited states during sputtering of transition metals

    SciTech Connect

    Wucher, A.; Sroubek, Z.

    1997-01-01

    We propose a simple model which treats the formation of metastable excited neutral atoms during sputtering of a transition metal as a two step process. First, the energy deposited into the electronic system of the solid by electronic energy losses of all moving particles in the collision cascade is considered to lead to a locally altered equilibrium electronic state of the solid. It is found that this step is dominated by collective interaction with the conduction band electrons rather than by electron promotion in binary atom-atom collisions. Second, sputtered excited atoms are assumed to be formed by resonant neutralization of excited ions (reflecting the altered equilibrium state) while crossing the surface. It is shown that this model explains the total as well as the velocity dependent excitation probability observed in recent experiments on sputtered neutral silver atoms, which cannot be understood in terms of existing theories describing the formation of excited states in sputtering. {copyright} {ital 1996} {ital The American Physical Society}

  12. Optical Studies of Sputtering in Magnetically Enhanced Helium Discharges

    NASA Astrophysics Data System (ADS)

    Lawler, James E.; Feigenson, Thomas J.; Sommerer, Timothy J.; Smith, David J.; Trotter, Jason; Aceto, Steven C.

    2014-10-01

    A cold-cathode gas-discharge switch for the electric power grid must operate at the highest possible current density to be competitive. Magnetic enhancement, similar to that of a magnetron sputtering discharge, achieves current densities far above the classic ``normal'' cold-cathode fall current density. One of two physical mechanisms, power dissipation or sputtering, is likely to limit the ultimate current density of a magnetically enhanced device. Using forced cooling a power dissipation density of about 1 kW/cm2 should be achievable. This corresponds to a current density of 5 A/cm2 assuming a 200 V cathode fall. Sputtering can be much reduced using a light buffer gas such as hydrogen or helium. We are studying the transition to `metal mode' operation in such discharges. Metal mode is often described as a current density at which lines of sputtered metal dominate buffer gas lines in the emission spectrum. Preliminary results in a magnetically enhanced discharge operating in the A/cm2 range with helium buffer gas over some cathode materials are presented. The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

  13. Characterization of a nanometer-thick sputtered polytetrafluoroethylene film

    NASA Astrophysics Data System (ADS)

    Li, Lei; Jones, Paul M.; Hsia, Yiao-Tee

    2011-02-01

    Fast growth of nanotechnology, e.g. hard disk drive (HDD) and microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), requires nanometer-thick protection films with high thermal stability and low surface energy. In this paper, we report the characterization results of a nanometer-thick sputtered polytetrafluoroethylene (PTFE) film prepared by radio frequency (RF) sputtering. Atomic force microscopy (AFM) and X-ray reflectivity (XRR) results show that the nanometer-thick sputtered PTFE film has good uniformity. Thermally programmed desorption (TPD) results show that the film is thermally stable up to 430 °C. Surface energy measurement via contact angle method shows that the film has low surface energy with the thickness as low as 1.5 nm. X-ray photoelectron spectroscopy (XPS) data suggests that the film has crosslinked molecular structure, which results in amorphous morphology as shown by X-ray diffraction (XRD) data. Nano-indentation testing shows that the sputtered film has higher hardness and modulus than bulk PTFE. The structure-property relationship has been discussed.

  14. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  15. Sputtered gold films for surface-enhanced Raman scattering

    SciTech Connect

    Maya, L.; Vallet, C.E.; Lee, Y.H.

    1997-03-01

    Sputtered gold films in a pure form or as nanocomposites in silica or silicon nitride were screened for surface-enhanced Raman scattering (SERS) activity using Rhodamine 6G as a probe. The films were prepared by sputtering pure gold or solidified Au{endash}Si alloys in plasmas generated in a dc glow discharge apparatus. The plasmas were produced with argon, nitrogen, or argon{endash}oxygen as the sputtering gas to directly deposit gold films or in the latter case a gold oxide intermediate. The alloys produce nanocomposite films in a silicon nitride or silica matrix depending on the plasma gas. SERS activity was detected in some of the films thus leading to a search for the critical parameters that controlled this phenomenon. The films were characterized by profilometry, x-ray diffraction, and atomic force microscopy. SERS activity was found to be correlated to crystallite size in the 10{endash}25 nm range and to roughness larger than 15 nm, and it was independent of film thickness. Sputtered gold films, particularly those containing the gold as a nanocomposite in silica are attractive media for SERS because of excellent adherence, ruggedness, and simplicity in preparation. {copyright} {ital 1997 American Vacuum Society.}

  16. Pretreatment of lubricated surfaces with sputtered cadmium oxide

    NASA Technical Reports Server (NTRS)

    Fusaro, Robert L. (Inventor)

    1991-01-01

    Cadmium oxide is used with a dry solid lubricant on a surface to improve wear resistance. The surface topography is first altered by photochemical etching to a predetermined pattern. The cadmium oxide is then sputtered onto the altered surface to form an intermediate layer to more tightly hold the dry lubricant, such as graphite.

  17. Sputtering phenomena of discharge chamber components in a 30-cm diameter Hg ion thruster

    NASA Technical Reports Server (NTRS)

    Mantenieks, M. A.; Rawlin, V. K.

    1976-01-01

    Sputtering and deposition rates have been measured for discharge chamber components of a 30-cm diameter mercury ion thruster. It was found that sputtering rates of the screen grid and cathode baffle were strongly affected by geometry of the baffle holder. Sputtering rates of the baffle and screen grid were reduced to 80 and 125 A/hr, respectively, by combination of appropriate geometry and materials selections. Sputtering rates such as these are commensurate with thruster lifetimes of 15,000 hours or more. A semiempirical sputtering model showed good agreement with the measured values.

  18. Using C₆₀⁺ Sputtering to Improve Detection Limit of Nitrogen in Zinc Oxide

    SciTech Connect

    Zhu, Zihua; Shutthanandan, V.; Nachimuthu, Ponnusamy

    2010-05-11

    C₆₀⁺ sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Compared to traditional Cs+ sputtering depth profiling, the C₆₀⁺ sputtering provides over 200 times of effective signal intensity and the detection limit is about 10 times better. In addition, our X-ray photoelectron spectroscopy (XPS) results show that sputtering zinc oxide materials by 10 keV C₆₀⁺ leads to very weak carbon deposition at bottom of the sputter crater.

  19. Polarity inversion in aluminum nitride thin films under high sputtering power

    SciTech Connect

    Akiyama, Morito; Kamohara, Toshihiro; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki

    2007-04-09

    The authors have investigated the influence of sputtering power on the piezoelectric response of aluminum nitride (AlN) thin films prepared on titanium nitride bottom electrodes. The piezoelectric response strongly depends on the sputtering power. The polar inversion was found by piezoresponse force microscopy. The polarity gradually changes from the N polarity to Al polarity with increasing sputtering power. The piezoelectric response of the films changes from -2.7 to +4.3 pC/N with increasing sputtering power from 100 to 500 W. Furthermore, the polarity inversion from the N polarity to Al polarity is observed by increasing sputtering power during growth.

  20. Sputtering phenomena of discharge chamber components in a 30-cm diameter Hg ion thruster

    NASA Technical Reports Server (NTRS)

    Mantenieks, M. A.; Rawlin, V. K.

    1976-01-01

    Sputtering and deposition rates were measured for discharge chamber components of a 30-cm diameter mercury ion thruster. It was found that sputtering rates of the screen grid and cathode baffle were strongly affected by geometry of the baffle holder. Sputtering rates of the baffle and screen grid were reduced to 80 and 125 A/hr, respectively, by combination of appropriate geometry and materials selections. Sputtering rates such as these are commensurate with thruster lifetimes of 15,000 hours or more. A semiempirical sputtering model showed good agreement with the measured values.

  1. Molecular Dynamics simulations of platinum plasma sputtering. : A comparative case study.

    NASA Astrophysics Data System (ADS)

    Brault, Pascal; Chuon, Sotheara; Bauchire, Jean-Marc

    2016-05-01

    Molecular Dynamics simulations are carried out for investigating atomic processes of platinum sputtering. Sputtered Pt atom energy distribution functions are determined at different sputtering argon ionenergies: 100, 500 and 1000 eV. Calculated energy distribution functions show a cross-over from Thompson theory to binary collision model when increasing argon ion energy and Pt atom sputtered energy. Implanted argon ion number is depending on its kinetic energy, while it is not the case in binary collision approximation. Finally sputtering yields are greater for Thompson theory than for binary collision model at low energy, but converge to the close values at high energy.

  2. Low-damage high-throughput grazing-angle sputter deposition on graphene

    SciTech Connect

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  3. Particle contamination formation and detection in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Weiss, C.A.; Sequeda, F.; Huang, C.

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  4. The effect of plasma impurities on the sputtering of tungsten carbide.

    PubMed

    Vörtler, K; Björkas, C; Nordlund, K

    2011-03-01

    Understanding of sputtering by ion bombardment is needed in a wide range of applications. In fusion reactors, ion impacts originating from a hydrogen-isotope-rich plasma will lead, among other effects, to sputtering of the wall material. To study the effect of plasma impurities on the sputtering of the wall mixed material tungsten carbide molecular dynamics simulations were carried out. Simulations of cumulative D cobombardment with C, W, He, Ne or Ar impurities on crystalline tungsten carbide were performed in the energy range 100-300 eV. The sputtering yields obtained at low fluences were compared to steady state SDTrimSP yields. During bombardment single C atom sputtering was preferentially observed. We also detected significant W(x)C(y) molecule sputtering. We found that this molecule sputtering mechanism is of physical origin. PMID:21411895

  5. TiN Deposition and Process Diagnostics using Remote Plasma Sputtering

    NASA Astrophysics Data System (ADS)

    Yang, Wonkyun; Kim, Gi-Taek; Lee, Seunghun; Kim, Do-Geun; Kim, Jong-Kuk

    2013-08-01

    The discharge voltage-current characteristics and the optical diagnostics of a remote plasma sputtering system called by high density plasma assisted sputtering source (HiPASS) were investigated. The remote plasma was generated by the hollow cathode discharge (HCD) gun and was transported to the target surface by external electromagnet coils. This showed a wide process window because the sputtering voltage and current could be individually controlled. The ion density and energy distribution could be also controlled unlike the conventional magnetron sputtering. Titanium nitride films were deposited under different sputtering voltage. The high voltage mode induced the high ionization ratio of the sputtered atoms and the high ion energy toward the substrate. That resulted in the enlarged grain size, and the preferred orientation toward (220). Eventually, this optimized condition of HiPASS obtained the best hardness of TiN films to be about 48 GPa at the sputtering voltage of -800 V.

  6. MAVEN data-model comparison of the response of heavy pick-up ions during extreme conditions at Mars

    NASA Astrophysics Data System (ADS)

    Curry, Shannon; Luhmann, Janet G.; Dong, Chuanfei D.; Brain, David; Leblanc, Francois; Modolo, Ronan; Halekas, Jasper; McFadden, James; Connerney, Jack; Espley, Jared; Mitchell, David; Larson, Davin; Hara, Takuya; Jakosky, Bruce

    2015-11-01

    MAVEN has observed multiple interplanetary coronal mass ejection (ICME) events at Mars, showing dramatic enhancements of heavy ion precipitation into the upper atmosphere. Heavy ion precipitation is the primary driver of sputtering, which is believed to be one of the main channels for atmospheric erosion during earlier epochs of our solar system when the solar activity and EUV intensities were much higher than the present day. Using MAVEN observations of extreme solar wind events, we simulate atmospheric precipitation using fluid and kinetic models and compare with MAVEN observations. The fluid model reproduces the observed features in the solar wind density, velocity and magnetic field seen along the MAVEN orbit during the March 8th ICME event, and the subsequent precipitation shows strong agreement with other published predictions of sputtering in extreme conditions.

  7. On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

    NASA Astrophysics Data System (ADS)

    Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

    2014-04-01

    The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps

  8. Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)

    SciTech Connect

    Burnett, J.W.; Biersack, J.P.; Gruen, D.M.; Joergensen, B.; Krauss, A.R.; Pellin, M.J.; Schweitzer, E.L.; Yates, J.T. Jr.; Young, C.E.

    1987-01-01

    The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar/sup +/. The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transport of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab.

  9. Heavy-ion dosimetry

    SciTech Connect

    Schimmerling, W.

    1980-03-01

    This lecture deals with some of the more important physical characteristics of relativistic heavy ions and their measurement, with beam delivery and beam monitoring, and with conventional radiation dosimetry as used in the operation of the BEVALAC biomedical facility for high energy heavy ions (Lyman and Howard, 1977; BEVALAC, 1977). Even so, many fundamental aspects of the interaction of relativistic heavy ions with matter, including important atomic physics and radiation chemical considerations, are not discussed beyond the reminder that such additional understanding is required before an adequte perspective of the problem can be attained.

  10. Origin of Ca-Al-rich inclusions. II - Sputtering and collisions in the three-ph8se interstellar medium

    NASA Technical Reports Server (NTRS)

    Clayton, D. D.

    1981-01-01

    The theory put forward by Clayton (1977) for the formation of the Ca-Al-rich inclusions within C3 meteorites is extended to an evolutionary history in a three-phase interstellar medium. Widespread supersonic turbulence in the hot interstellar medium is maintained by supernova shock waves, giving rise to heavy sputtering of the refractory dust. Subsequent reaccumulation with varying dust/gas ratios or varying particle sizes produces isotopically fractionated Ca-Al-rich accumulates. It is thought that the Ca-Al-rich inclusions themselves are formed by the following sequence in the solar system: (1) cold accumulation of larger-than-average Ca-Al-rich particles containing supernova condensate cores into macroscopic (approximately 1 cm) Ca-Al-rich agglomerates, probably by sedimentation; and (2) fusion of the supernova condensates into macroscopic minerals by exothermic chemical reactions that begin when the accumulate has been warmed, thereby releasing energy from the unequilibrated forms accumulated from the interstellar medium.

  11. Negative pressure wound therapy.

    PubMed

    Thompson, James T; Marks, Malcolm W

    2007-10-01

    Negative pressure wound therapy has become an increasingly important part of wound management. Over the last decade, numerous uses for this method of wound management have been reported, ranging from acute and chronic wounds, to closure of open sternal and abdominal wounds, to assistance with skin grafts. The biophysics behind the success of this treatment largely have focused on increased wound blood flow, increased granulation tissue formation, decreased bacterial counts, and stimulation of wound healing pathways through shear stress mechanisms. The overall success of negative pressure wound therapy has led to a multitude of clinical applications, which are discussed in this article. PMID:17967622

  12. Aerodynamics of Heavy Vehicles

    NASA Astrophysics Data System (ADS)

    Choi, Haecheon; Lee, Jungil; Park, Hyungmin

    2014-01-01

    We present an overview of the aerodynamics of heavy vehicles, such as tractor-trailers, high-speed trains, and buses. We introduce three-dimensional flow structures around simplified model vehicles and heavy vehicles and discuss the flow-control devices used for drag reduction. Finally, we suggest important unsteady flow structures to investigate for the enhancement of aerodynamic performance and future directions for experimental and numerical approaches.

  13. Sputtering deposition and characterization of ultrathin amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  14. The Negative Repetition Effect

    ERIC Educational Resources Information Center

    Mulligan, Neil W.; Peterson, Daniel J.

    2013-01-01

    A fundamental property of human memory is that repetition enhances memory. Peterson and Mulligan (2012) recently documented a surprising "negative repetition effect," in which participants who studied a list of cue-target pairs twice recalled fewer targets than a group who studied the pairs only once. Words within a pair rhymed, and…

  15. [Chemotherapies of negative schizophrenia].

    PubMed

    Petit, M; Dollfus, S

    1991-01-01

    Five years ago, Goldberg claimed that negative symptoms of schizophrenia do respond to neuroleptics. This apparent discovery is, in fact, a very common way of thinking for European schools of psychiatry, specially the French one guided by Delay and Deniker. Initially focused on reserpine and some alerting phenothiazines such as thioproperazine, this opinion has been extended to benzamides in the 1970s. The analysis of the publications devoted to this point indicates that several drugs are actually considered as potent disinhibitors (i.e. active on negative symptoms of schizophrenia): Phenothiazines: As shown in the controlled studies by Itil (1971), Poirier-Littré (1988), fluphenazine and pipotiazine improve the BPRS anergia factor and the SANS score. Butyrophenones: The first description of the "imipramine like" effect of trifluperidol by Janssen (1959) initiated the studies by Gallant (1960), Fox (1963). They compared trifluperidol at low doses versus haloperidol and chlorpromazine at medium and high doses, BPRS anergia factor improved only at low doses. Diphenylbutylpiperidines (DPBP): Meltzer's review (1986) concluded to the efficacy of such drugs on negative symptoms appearing as a specific biochemical relationship effect. A definite analysis about doses leads to a very different interpretation: DPBP low doses and only low doses improved negative symptoms as much as some low doses of phenothiazines. On the opposite, DPBP, phenothiazines and butyrophenones high doses are inefficient.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:1683624

  16. Effect of substrate bias on the structural and electrical properties of sputtered Mo thin films on flexible substrates.

    PubMed

    Xu, Jiaxiong

    2016-01-01

    The metal molybdenum (Mo) thin films deposited on flexible substrates can act as the contact electrode of flexible Cu(In,Ga)Se2 or Cu2ZnSn(S,Se)4 solar cells. In this work, in order to enhance the structural and electrical characteristics of flexible Mo thin films, a negative substrate bias was applied during the direct current sputtering of Mo thin films. The flexible substrates used for growing the Mo films were stainless steel foils and polyimides. The characteristics of Mo thin films were studied by x-ray diffraction and sheet resistance measurements. The measured results reveal that an optimal value of negative substrate bias can be found for improving the electrical and structural characteristics of Mo thin films on flexible substrates. The minimum sheet resistances of Mo thin films are 2.50 Ω/sq and 2.73 Ω/sq for the stainless steel foil and polyimide substrates, respectively. PMID:27339280

  17. Process for removing heavy metal compounds from heavy crude oil

    DOEpatents

    Cha, Chang Y.; Boysen, John E.; Branthaver, Jan F.

    1991-01-01

    A process is provided for removing heavy metal compounds from heavy crude oil by mixing the heavy crude oil with tar sand; preheating the mixture to a temperature of about 650.degree. F.; heating said mixture to up to 800.degree. F.; and separating tar sand from the light oils formed during said heating. The heavy metals removed from the heavy oils can be recovered from the spent sand for other uses.

  18. Supported plasma sputtering apparatus for high deposition rate over large area

    DOEpatents

    Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

    1977-01-01

    A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

  19. Enhancement of bioactivity on medical polymer surface using high power impulse magnetron sputtered titanium dioxide film.

    PubMed

    Yang, Yi-Ju; Tsou, Hsi-Kai; Chen, Ying-Hung; Chung, Chi-Jen; He, Ju-Liang

    2015-12-01

    This study utilizes a novel technique, high power impulse magnetron sputtering (HIPIMS), which provides a higher ionization rate and ion bombardment energy than direct current magnetron sputtering (DCMS), to deposit high osteoblast compatible titanium dioxide (TiO2) coatings with anatase (A-TiO2) and rutile (R-TiO2) phases onto the biomedical polyetheretherketone (PEEK) polymer substrates at low temperature. The adhesions of TiO2 coatings that were fabricated using HIPIMS and DCMS were compared. The in vitro biocompatibility of these coatings was confirmed. The results reveal that HIPIMS can be used to prepare crystallinic columnar A-TiO2 and R-TiO2 coatings on PEEK substrate if the ratio of oxygen to argon is properly controlled. According to a tape adhesion test, the HIPIMS-TiO2 coatings had an adhesion grade of 5B even after they were immersed in simulated body fluid (SBF) environments for 28days. Scratch tests proved that HIPIMS-TiO2 coatings undergo cohesive failure. These results demonstrate that the adhesive force between HIPIMS-TiO2 coating/PEEK is stronger than that between DCMS-TiO2 coating/PEEK. After a long period (28days) of immersion in SBF, a bone-like crystallinic hydroxyapatite layer with a corresponding Ca/P stoichiometry was formed on both HIPIMS-TiO2. The osteoblast compatibility of HIPIMS-TiO2 exceeded that of the bare PEEK substrate. It is also noticeable that the R-TiO2 performed better in vitro than the A-TiO2 due to the formation of many negatively charged hydroxyl groups (-OH(-)) groups on R-TiO2 (110) surface. In summary, the HIPIMS-TiO2 coatings satisfied the requirements for osseointegration, suggesting the possibility of using HIPIMS to modify the PEEK surface with TiO2 for spinal implants. PMID:26354240

  20. Radiolysis and sputtering of carbon dioxide ice induced by swift Ti, Ni, and Xe ions

    NASA Astrophysics Data System (ADS)

    Mejía, C.; Bender, M.; Severin, D.; Trautmann, C.; Boduch, Ph.; Bordalo, V.; Domaracka, A.; Lv, X. Y.; Martinez, R.; Rothard, H.

    2015-12-01

    Solid carbon dioxide (CO2) is found in several bodies of the solar system, the interstellar medium (ISM) and young stellar objects, where it is exposed to cosmic and stellar wind radiation. Here, the chemical and physical modifications induced by heavy ion irradiation of pure solid CO2 at low temperature (T = 15-30 K) are analyzed. The experiments were performed with Ti (550 MeV) and Xe (630 MeV) ions at the UNILAC of GSI/Darmstadt and with Ni ions (46 and 52 MeV) at IRRSUD of GANIL/Caen. The evolution of the thin CO2 ice films (deposited on a CsI window) was monitored by mid-infrared absorption spectroscopy (FTIR). The dissociation rate of CO2, determined from the fluence dependence of the IR absorption peak intensity, is found to be proportional to the electronic stopping power Se. We also confirm that the sputtering yield shows a quadric increase with electronic stopping power. Furthermore, the production rates of daughter molecules such as CO, CO3 and O3 were found to be linear in Se.

  1. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    SciTech Connect

    Högberg, Hans Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars; Samuelsson, Mattias

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  2. Full-Scale 3D Simulation of a sputtering magnetron

    NASA Astrophysics Data System (ADS)

    Walton, C. C.; Wilks, S. C.; Ayyaswamy, V.; Verboncoeur, J. P.; Parks, P. B.; Wu, W.; Zhou, C. D.; Stoltz, P. H.

    2010-11-01

    PIC simulations have been used to study ion energy distributions in magnetron plasmas, and coupled with other simulations to relate plasma processes to properties of sputtered films. The plasma is weakly ionized and exchanges heat with the background gas by scattering and charge-exchange reactions. Resulting heating of neutral background gas up to ˜1200K, leading to ˜5X rarefaction and increased plasma impedance, was studied with coupled PIC and Direct Simulation Monte Carlo (DSMC) simulations. Effects of scaling the PIC simulations from 0.1X to 1X physical size, and modifying the plasma potential by a dc substrate bias, will be presented. Comparison to experimental I-V relations and importance for roughness and density of sputtered films will be discussed.

  3. Some properties of RF sputtered hafnium nitride coatings

    NASA Technical Reports Server (NTRS)

    Aron, P. R.; Grill, A.

    1982-01-01

    Hafnium nitride coatings were deposited by reactive RF sputtering from a hafnium target in nitrogen and argon gas mixtures. The rate of deposition, composition, electrical resistivity and complex index of refraction were investigated as a function of target substrate distance and the fraction nitrogen, (fN2) in the sputtering atmosphere. The relative composition of the coatings is independent on fN2 for values above 0.1. The electric resistivity of the hafnium nitride films changes over 8 orders of magnitude when fN2 changes from 0.10 to 0.85. The index of refraction is almost constant at 2.8(1-0.3i) up to fN2 = 0.40 then decreases to 2.1(1 - 0.01i) for higher values of fN2.

  4. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, John R.

    1996-01-01

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  5. Cluster Growth Mechanism in Sputtering Gas-Aggregation Nanocluster Source

    NASA Astrophysics Data System (ADS)

    Tarsem Singh, M.; Han, H.; Sundararajan, J. A.; Qiang, Y.

    2010-03-01

    We have studied the influence of some parameters for cluster growth of core shell iron- iron oxide magnetic nanoparticles (MNPs). The nanocluster source which combines a magnetron sputtering gun with a gas aggregation chamber is used to produce MNPs. Nanoclusters of various mean sizes ranging from 1-100 nm can be synthesized by varying the aggregation distance, Ar to He gas ratio, pressure in the aggregation tube, sputter power, and temperature of the aggregation tube. Physical properties -- magnetic measurements by VSM and SQUID and size distribution by SEM and TEM were studied for different MNPs. The significance of this research is to understand the growth mechanism and physical properties as the size of particles grow from few nanometer to hundred of nanometer. Growth of the particles is theoretically explained by the homogenous and heterogeneous growth process. Based on this study, different size of MNPs fits into different category of applications from data storage to biomedical field.

  6. Energy distributions of sputtered copper neutrals and ions

    NASA Technical Reports Server (NTRS)

    Lundquist, T. R.

    1978-01-01

    Direct quantitative analysis of surfaces by secondary ion mass spectrometry will depend on an understanding of the yield ratio of ions to neutrals. This ratio as a function of the energy of the sputtered particles has been obtained for a clean polycrystalline copper surface sputtered by 1000-3000 eV Ar(+). The energy distributions of both neutral and ionized copper were measured with a retarding potential analyzer using potential modulation differentiation and signal averaging. The maximum for both distributions is identical and occurs near 2.5 eV. The energy distributions of neutrals is more sharply peaked than that of the ions, presumably as a consequence of more efficient nutralization of slow escaping ions by the mobile electrons of copper. The ion-neutral ratio is compared with results from various ionization models.

  7. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, J.R.

    1996-04-30

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

  8. Comprehensive computer model for magnetron sputtering. II. Charged particle transport

    SciTech Connect

    Jimenez, Francisco J. Dew, Steven K.; Field, David J.

    2014-11-01

    Discharges for magnetron sputter thin film deposition systems involve complex plasmas that are sensitively dependent on magnetic field configuration and strength, working gas species and pressure, chamber geometry, and discharge power. The authors present a numerical formulation for the general solution of these plasmas as a component of a comprehensive simulation capability for planar magnetron sputtering. This is an extensible, fully three-dimensional model supporting realistic magnetic fields and is self-consistently solvable on a desktop computer. The plasma model features a hybrid approach involving a Monte Carlo treatment of energetic electrons and ions, along with a coupled fluid model for thermalized particles. Validation against a well-known one-dimensional system is presented. Various strategies for improving numerical stability are investigated as is the sensitivity of the solution to various model and process parameters. In particular, the effect of magnetic field, argon gas pressure, and discharge power are studied.

  9. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    SciTech Connect

    Sahu, B. B. Han, Jeon G.; Kim, Hye R.; Ishikawa, K.; Hori, M.

    2015-01-21

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons.

  10. Towards an optimised sputtered MoS2 lubricant film

    NASA Technical Reports Server (NTRS)

    Roberts, E. W.

    1986-01-01

    It is shown that the tribological quality of MoS2 lubricant films formed by magnetron sputtering is determined by the choice of sputtering conditions. By selecting the appropriate conditions, films of extremely high lubricity and endurance (in vacuum), which are well suited to many space applications, are obtained. Such MoS2 films, when applied to precision ball hearings, give rise to the lowest torques (for the given test conditions) yet seen in our laboratory. While a remarkably good performance is obtained in vacuum, tests in air show a marked deterioration in lubricating qualities. It is demonstrated that this is attributable to the adsorption of water vapor on MoS2 surfaces and that the degree of deterioration is related to the partial pressure of water vapor present. Analysis of results indicates that the factors relevant to obtaining optimum films are deposition rate and film composition.

  11. Very low pressure high power impulse triggered magnetron sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  12. Erosion of Extraction Electrodes of Ion Sources due to Sputtering

    SciTech Connect

    Kenmotsu, Takahiro; Wada, Motoi; Miyamoto, Naoki

    2011-01-07

    The effects upon erosion due to implanted atoms in extraction electrodes of an ion source have been investigated through calculating the sputtering yields with a Monte Carlo simulation code, ACAT. The results obtained with ACAT have indicated that the sputtering yields of extraction electrodes are substantially affected by the retention of implanted atoms depending upon the mass ratio of electrode materials and extracted ions from the source plasma. The enhanced erosion takes place as the heavier ion beam species like phosphor is implanted into lighter electrode material like carbon. Additional mixing of materials arising from ion source operation, such as hot cathode materials evaporation onto a carbon extraction electrode, can shorten the lifetime of the extraction electrodes.

  13. Sputtering yield of Pu bombarded by fission Fragments from Cf

    SciTech Connect

    Danagoulian, Areg; Klein, Andreas; Mcneil, Wendy V; Yuan, Vincent W

    2008-01-01

    We present results on the yield of sputtering of Pu atoms from a Pu foil, bombarded by fission fragments from a {sup 252}Cf source in transmission geometry. We have found the number of Pu atoms/incoming fission fragments ejected to be 63 {+-} 1. In addition, we show measurements of the sputtering yield as a function of distance from the central axis, which can be understood as an angular distribution of the yield. The results are quite surprising in light of the fact that the Pu foil is several times the thickness of the range of fission fragment particles in Pu. This indicates that models like the binary collision model are not sufficient to explain this behavior.

  14. Energy spectrum of sputtered uranium - A new technique

    NASA Technical Reports Server (NTRS)

    Weller, R. A.; Tombrello, T. A.

    1978-01-01

    The fission track technique for detecting U-235 has been used in conjunction with a mechanical time-of-flight spectrometer in order to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E exp -1.77 for E not less than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the random collision cascade model of sputtering.

  15. Mass effects on angular distribution of sputtered atoms

    NASA Technical Reports Server (NTRS)

    Olson, R. R.; King, M. E.; Wehner, G. K.

    1979-01-01

    Sputtering metal targets at low ion energies (Hg or Ar at less than 300 eV) under normal ion incidence causes the lighter atoms (lighter isotopes or lighter elements of alloys) to be preferentially ejected in a direction normal to the target surface. Experimental results are shown for several elements and alloys at various bombardment energies. The amount of enrichment of the lighter species normal to the target surface decreases quite rapidly with increasing ion energy. The phenomenon is a result of reflective collisions because lighter atoms can be backscattered from heavier ones underneath but not vice versa. The effect provides an explanation of why solar-wind-exposed lunar material is enriched in the heavier isotopes, since sputtered lower-mass elements have a higher chance of achieving the lunar escape velocity.

  16. Au/p-diamond ohmic contacts deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Zhen, C. M.; Wang, X. Q.; Wu, X. C.; Liu, C. X.; Hou, D. L.

    2008-12-01

    Ohmic contacts have been formed on diamond films using a monolayer Au. Au film was deposited by radio frequency sputtering. I- V measurements show the good ohmic behavior of the contacts in the as-deposited and annealed states and the specific contact resistivity obtained by circular transmission line model was 1.27 × 10 -3 and 5.43 × 10 -4 Ω cm 2, respectively. Radio frequency sputtering makes an obvious interdiffusion between Au and diamond in the as-deposited contacts. Annealing the contact enhances the interdiffusion. X-ray photoelectron spectroscopy analyses and cross-sectional scan electron microscopy reveal the presence of an intermediate layer at the interface due to the intermixing between Au and diamond. Surface native oxide of the diamond film was effectively removed by treating the substrate film in boiling aqua regia solution.

  17. Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

    PubMed Central

    2015-01-01

    Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar+ ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio. PMID:25951108

  18. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    NASA Astrophysics Data System (ADS)

    Slepička, P.; Juřík, P.; Malinský, P.; Macková, A.; Kasálková, N. Slepičková; Švorčík, V.

    2014-08-01

    Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar+ ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing.

  19. Monolayer graphene growth on sputtered thin film platinum

    SciTech Connect

    Kang, Byung Jin; Mun, Jeong Hun; Cho, Byung Jin; Hwang, Chan Yong

    2009-11-15

    It is demonstrated that sputtered thin film platinum (Pt) can be used as a catalytic metal for graphene growth on metal. During the crystallization annealing, the sputtered Pt is crystallized mostly into Pt (111) orientation, maintaining excellent surface roughness with no sign of agglomeration. The relatively lower carbon solubility in Pt and the good surface roughness of the thin film Pt enable us to form a uniform monolayer graphene on Pt over the entire region of the thin film Pt/SiO{sub 2}/Si substrate by carbon dissolution and segregation method processed in a methane ambient. The monolayer graphene grown on Pt has been successfully transferred to SiO{sub 2}/Si substrate by simple wet etching of Pt. The results of Raman spectroscopic and scanning tunneling microscopic measurements of the synthesized graphene layer are presented.

  20. Magnetic properties of sputtered Permalloy/molybdenum multilayers

    SciTech Connect

    Romera, M.; Ciudad, D.; Maicas, M.; Aroca, C.

    2011-10-15

    In this work, we report the magnetic properties of sputtered Permalloy (Py: Ni{sub 80}Fe{sub 20})/molybdenum (Mo) multilayer thin films. We show that it is possible to maintain a low coercivity and a high permeability in thick sputtered Py films when reducing the out-of-plane component of the anisotropy by inserting thin film spacers of a non-magnetic material like Mo. For these kind of multilayers, we have found coercivities which are close to those for single layer films with no out-of-plane anisotropy. The coercivity is also dependent on the number of layers exhibiting a minimum value when each single Py layer has a thickness close to the transition thickness between Neel and Bloch domain walls.

  1. Rotating cylindrical magnetron sputtering: Simulation of the reactive process

    SciTech Connect

    Depla, D.; Mahieu, S.; Van Aeken, K.; Leroy, W. P.; Haemers, J.; De Gryse, R.; Li, X. Y.; Bogaerts, A.

    2010-06-15

    A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

  2. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  3. Lubrication with sputtered MoS2 films.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1971-01-01

    Sputtered MoS2 films (2000-6500 A) were deposited on highly polished metal surfaces. These films have a low coefficient of friction (0.03-0.04) at speeds of 40-80 rpm and loads of 250-1000 grams. At loads of 250 grams, the wear lives are over 0.5 million cycles, but at 1000 gram loads, it decreases to 38,000 cycles. Friction experiments and tensile tests have indicated that sputtered films have a strong adherence to metal surfaces. Electron transmission, diffraction, and scanning electron microscopy show that these films have an extremely small particle size less than 30 A in diameter and are very dense and free from observable pinholes.

  4. Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies

    NASA Astrophysics Data System (ADS)

    Tai, Takeshi; Nishide, Masamichi; Matsuoka, Masashi; Kamo, Takafumi; Funakubo, Hiroshi; Katoda, Takashi; Shima, Hiromi; Nishida, Ken; Yamamoto, Takashi

    2012-09-01

    Sputtering damage of SrRuO3 (SRO) films prepared by RF magnetron sputtering under various growth pressures was investigated by Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Phonon modes that were related to Ru and Sr ions changed and XPS spectra shifted with decreasing growth pressure. These results indicate that Sr ions switched place with Ru ions in SRO films when the SRO films had sputtering damage under low-growth-pressure sputtering condition as determined from Raman spectroscopy and XPS measurement. The antisite ion content increased with decreasing growth pressure. The resistivity of the SRO films also increased with increasing antisite ion content. The dynamics of sputtering damage revealed that the antisite Sr and Ru ions were formed in SRO films.

  5. Superconductivity in sputtered CuMO6S8

    NASA Technical Reports Server (NTRS)

    Alterovitz, S.; Woollam, J. A.; Kammerdiner, L.; Luo, H. L.; Martin, C.

    1977-01-01

    Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

  6. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current. PMID:22380320

  7. Substrate heating and cooling during magnetron sputtering of copper target

    NASA Astrophysics Data System (ADS)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S.; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-01

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density.

  8. Using sputter coated glass to stabilize microstrip gas chambers

    DOEpatents

    Gong, Wen G.

    1997-01-01

    By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.

  9. Obsidian hydration profiles measured by sputter-induced optical emission.

    PubMed

    Tsong, I S; Houser, C A; Yusef, N A; Messier, R F; White, W B; Michels, J W

    1978-07-28

    The variation of concentrations of hydrogen, sodium, potassium, lithium, calcium, magnesium, silicon, and aluminum as a function of depth in the hydration layer of obsidian artifacts has been determined by sputter-induced optical emission. The surface hydration is accompanied by dealkalization, and there is a buildup of alkaline earths, calcium and magnesium in the outermost layers. These results have clarified the phenomena underlying the obsidian hydration dating technique. PMID:17793728

  10. In vitro flow measurements in ion sputtered hydrocephalus shunts

    NASA Technical Reports Server (NTRS)

    Cho, Y. I.; Back, L. H.

    1989-01-01

    This paper describes an experimental procedure for accurate measurements of the pressure-drop/flow rate relationship in hydrocephalus shunts. Using a fish-hook arrangement, small flow rates in a perforated ion-sputtered Teflon microtubule were measured in vitro in a pressured system and were correlated with pressure in the system. Results indicate that appropriate drainage rates could be obtained in the physiological range for hydrocephalus shunts.

  11. Threshold dependence in the electronic sputtering of condensed sulfur

    SciTech Connect

    Torrisi, L.; Coffa, S.; Foti, G.; Johnson, R.E.; Chrisey, D.B.; Boring, J.W.

    1988-07-15

    An apparent threshold is found for ejection of neutral sulfur from condensed sulfur due to electronic energy deposited by fast, light ions. This effect is important for understanding experiments on electronically stimulated sputtering (desorption) of large molecules. The threshold is determined by the density of ''ionization'' events deposited in the solid, and the nature of the threshold measured is affected by a material alteration process.

  12. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  13. Retention of Sputtered Molybdenum on Ion Engine Discharge Chamber Surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Dever, Joyce A.; Power, John L.

    2001-01-01

    Grit-blasted anode surfaces are commonly used in ion engines to ensure adherence of sputtered coatings. Next generation ion engines will require higher power levels, longer operating times, and thus there will likely be thicker sputtered coatings on their anode surfaces than observed to date on 2.3 kW-class xenon ion engines. The thickness of coatings on the anode of a 10 kW, 40-centimeter diameter thruster, for example, may be 22 micrometers or more after extended operation. Grit-blasted wire mesh, titanium, and aluminum coupons were coated with molybdenum at accelerated rates to establish coating stability after the deposition process and after thermal cycling tests. These accelerated deposition rates are roughly three orders of magnitude more rapid than the rates at which the screen grid is sputtered in a 2.3 kW-class, 30-centimeter diameter ion engine. Using both RF and DC sputtering processes, the molybdenum coating thicknesses ranged from 8 to 130 micrometers, and deposition rates from 1.8 micrometers per hour to 5.1 micrometers per hour. In all cases, the molybdenum coatings were stable after the deposition process, and there was no evidence of spalling of the coatings after 20 cycles from about -60 to +320 C. The stable, 130 micrometer molybdenum coating on wire mesh is 26 times thicker than the thickest coating found on the anode of a 2.3 kW, xenon ion engine that was tested for 8200 hr. Additionally, this coating on wire mesh coupon is estimated to be a factor of greater than 4 thicker than one would expect to obtain on the anode of the next generation ion engine which may have xenon throughputs as high as 550 kg.

  14. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  15. Optical properties of magnetron-sputtered and rolled aluminum

    SciTech Connect

    Van Gils, S.; Dimogerontakis, Th.; Buytaert, G.; Stijns, E.; Terryn, H.; Skeldon, P.; Thompson, G.E.; Alexander, M.R.

    2005-10-15

    The optical properties of magnetron-sputtered aluminum and AA1050 aluminum alloy sheet have been examined qualitatively using total reflectance and quantitatively by means of visible spectroscopic ellipsometry (VISSE). Significant changes in reflectance and optical constants are observed, which are related to the incorporation of oxide in the aluminum bulk. The role of such oxide was determined by VISSE using the Bruggeman effective-medium approximation, with the findings validated by x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy.

  16. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-09-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres.

  17. Hollow target magnetron-sputter-type solid material ion source

    SciTech Connect

    Sasaki, D.; Ieki, S.; Kasuya, T.; Wada, M.

    2012-02-15

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al{sup +} and Ar{sup +} ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 {mu}A, with the Al{sup +} ion beam occupying 30% of the total beam current.

  18. Characterisation of Mg biodegradable stents produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Elmrabet, N.; Botterill, N.; Grant, D. M.; Brown, P. D.

    2015-10-01

    Novel Mg-minitubes for biodegradable stent applications have been produced using PVD magnetron sputtering. The minitubes were characterised, as a function of annealing temperature, using a combination of SEM/EDS, XRD and hardness testing. The as-deposited minitubes exhibited columnar grain structures with high levels of porosity. Slight alteration to the crystal structure from columnar to equiaxed grain growth was demonstrated at elevated temperature, along with increased material densification, hardness and corrosion resistance.

  19. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  20. Negative refraction and superconductivity

    NASA Astrophysics Data System (ADS)

    Amariti, Antonio; Forcella, Davide; Mariotti, Alberto; Siani, Massimo

    2011-10-01

    We discuss exotic properties of charged hydrodynamical systems, in the broken superconducting phase, probed by electromagnetic waves. Motivated by general arguments from hydrodynamics, we observe that negative refraction, namely the propagation in opposite directions of the phase velocities and of the energy flux, is expected for low enough frequencies. We corroborate this general idea by analyzing a holographic superconductor in the AdS/CFT correspondence, where the response functions can be explicitly computed. We study the dual gravitational theory both in the probe and in the backreacted case. We find that, while in the first case the refractive index is positive at every frequency, in the second case there is negative refraction at low enough frequencies. This is in agreement with hydrodynamic considerations.

  1. Think (Gram) negative!

    PubMed Central

    2010-01-01

    The increasing prevalence of multiresistant Gram-negative bacteria of the Enterobacteriaceae family in Europe is a worrisome phenomenon. Extended spectrum betalactamase-producing Escherichia coli strains are widespread in the community and are frequently imported into the hospital. Of even more concern is the spread of carbapenem-resistant strains of Klebsiella spp. from regions where they are already endemic. Antibiotic use is a main driver of antibiotic resistance, which again increases broad spectrum antibiotic use, resulting in a vicious circle that is difficult to interrupt. The present commentary highlights important findings of a surveillance study of antimicrobial use and resistance in German ICUs over 8 years with a focus on Gram-negative resistance. PMID:20587087

  2. Light induced suppression of sulfur in a cesium sputter ion source.

    PubMed

    Martschini, Martin; Rohlén, Johan; Andersson, Pontus; Golser, Robin; Hanstorp, Dag; Lindahl, Anton O; Priller, Alfred; Steier, Peter; Forstner, Oliver

    2012-04-01

    New techniques for suppression of atomic isobars in negative ion beams are of great interest for accelerator mass spectrometry (AMS). Especially small and medium-sized facilities can significantly extend their measurement capabilities to new interesting isotopes with a technique independent of terminal voltage. In a new approach, the effect of continuous wave laser light directed towards the cathode surface in a cesium sputter ion source of the Middleton type was studied. The laser light induced a significant change in oxygen, sulfur and chlorine negative ion production from a AgCl target. Approximately 100 mW of laser light reduced the sulfur to chlorine ratio by one order of magnitude. The effect was found to depend on laser power and ion source parameters but not on the laser wavelength. The time constant of the effect varied from a few seconds up to several minutes. Experiments were first performed at the ion beam facility GUNILLA at University of Gothenburg with macroscopic amounts of sulfur. The results were then reproduced at the VERA AMS facility with chemically cleaned AgCl targets containing ∼1 ppm sulfur. The physical explanation behind the effect is still unclear. Nevertheless, the technique has been successfully applied during a regular AMS measurement of (36)Cl. PMID:23576897

  3. Light induced suppression of sulfur in a cesium sputter ion source

    PubMed Central

    Martschini, Martin; Rohlén, Johan; Andersson, Pontus; Golser, Robin; Hanstorp, Dag; Lindahl, Anton O.; Priller, Alfred; Steier, Peter; Forstner, Oliver

    2012-01-01

    New techniques for suppression of atomic isobars in negative ion beams are of great interest for accelerator mass spectrometry (AMS). Especially small and medium-sized facilities can significantly extend their measurement capabilities to new interesting isotopes with a technique independent of terminal voltage. In a new approach, the effect of continuous wave laser light directed towards the cathode surface in a cesium sputter ion source of the Middleton type was studied. The laser light induced a significant change in oxygen, sulfur and chlorine negative ion production from a AgCl target. Approximately 100 mW of laser light reduced the sulfur to chlorine ratio by one order of magnitude. The effect was found to depend on laser power and ion source parameters but not on the laser wavelength. The time constant of the effect varied from a few seconds up to several minutes. Experiments were first performed at the ion beam facility GUNILLA at University of Gothenburg with macroscopic amounts of sulfur. The results were then reproduced at the VERA AMS facility with chemically cleaned AgCl targets containing ∼1 ppm sulfur. The physical explanation behind the effect is still unclear. Nevertheless, the technique has been successfully applied during a regular AMS measurement of 36Cl. PMID:23576897

  4. Structural, magnetic, and transport properties of sputtered hexagonal MnNiGa thin films

    SciTech Connect

    Li, Yueqing; Liu, E. K.; Wu, G. H.; Wang, Wenhong; Liu, Zhongyuan

    2014-12-14

    We report on a systematical study of the structure, magnetism, and magnetotransport behavior of the hexagonal MnNiGa films deposited on thermally oxidized Si (001) substrates by magnetron sputtering. X-ray diffractions reveal that all the films deposited at different temperatures crystallized in hexagonal Ni{sub 2}In-type structure (space group P6{sub 3}/mmc). Scanning electron microscopy observations show that the surface morphology of the films varies with deposition temperature, and energy dispersive spectroscopy analysis shows compositions of the films remain nearly unchanged, independent of the deposition temperature. Magnetic measurements indicate that all films are ferromagnetic and exhibit a magnetic anisotropy behavior. The magnetoresistance (MR) exhibits a negative temperature- and field-dependent behavior. The possible origin of the negative MR is discussed. Furthermore, we found that the Hall effect is dominated by an anomalous Hall effect (AHE) only due to skew scattering independent of the deposition temperature of films. Moreover, the anomalous Hall resistivity presents a non-monotonously temperature-dependent behavior.

  5. Continued improvment of large area, in situ sputter deposition of superconducting YBCO thin films

    NASA Technical Reports Server (NTRS)

    Truman, J. K.; White, W. R.; Ballentine, P. H.; Mallory, D. S.; Kadin, A. M.

    1993-01-01

    The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.

  6. Ion beam analysis and co-sputtering simulation (CO-SS) of bi-metal films produced by magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Cruz, J.; Andrade, E.; Muhl, S.; Canto, C.; de Lucio, O.; Chávez, E.; Rocha, M. F.; Garcés-Medina, E.

    2016-03-01

    Magnetron sputtering is widely used to deposit thin films on different types of substrates. An important application of this method is to make multicomponent thin films using co-sputtering, where two or more elements are included in the target. The thickness and elemental composition of the films depend on the experimental parameters used, the system geometry and the spatial distribution of the elements in the target. If the target is made of two spatially separate pieces of the materials, then the composition of the deposit depends on a combination of the relative areas, the sputtering yield and the angular distribution of the emission of the sputtered flux of each material. In this work, a co-sputtering simulation program, known as CO-SS, was developed to simulate the thickness and composition of metal films produced by DC magnetron sputtering (Al) and co-sputtering (Al + Ti). The CO-SS code models the angular distribution of particles ejected by sputtering from the target, where this is assumed to vary as cosn β , where n is a free parameter and β is the angle of ejection relative to the normal to the surface of the target, and the sputtering yield of each material. The program also takes into account other geometry factors such as the distance between the target and the substrate, and the size of the substrate. Rutherford backscattering (RBS) using 4He was employed to measure the thickness and the composition of the films deposited on glass cover slides in order to assess the CO-SS program. The film thickness was also measured by profilometry. The CO-SS code was found to accurately model the experimental results for both the Al and Ti/Al films. The CO-SS code is freely available for use from http://demonstrations.wolfram.com/CoSputteringSimulationCOSS/.

  7. Negative Emissions Technology

    NASA Astrophysics Data System (ADS)

    Day, Danny

    2006-04-01

    Although `negative emissions' of carbon dioxide need not, in principle, involve use of biological processes to draw carbon out of the atmosphere, such `agricultural' sequestration' is the only known way to remove carbon from the atmosphere on time scales comparable to the time scale for anthropogenic increases in carbon emissions. In order to maintain the `negative emissions' the biomass must be used in such a way that the resulting carbon dioxide is separated and permanently sequestered. Two options for sequestration are in the topsoil and via geologic carbon sequestration. The former has multiple benefits, but the latter also is needed. Thus, although geologic carbon sequestration is viewed skeptically by some environmentalists as simply a way to keep using fossil fuels---it may be a key part of reversing accelerating climate forcing if rapid climate change is beginning to occur. I will first review the general approach of agricultural sequestration combined with use of resulting biofuels in a way that permits carbon separation and then geologic sequestration as a negative emissions technology. Then I discuss the process that is the focus of my company---the EPRIDA cycle. If deployed at a sufficiently large scale, it could reverse the increase in CO2 concentrations. I also estimate of benefits --carbon and other---of large scale deployment of negative emissions technologies. For example, using the EPRIDA cycle by planting and soil sequestering carbon in an area abut In 3X the size of Texas would remove the amount of carbon that is being accumulated worldwide each year. In addition to the atmospheric carbon removal, the EPRIDA approach also counters the depletion of carbon in the soil---increasing topsoil and its fertility; reduces the excess nitrogen in the water by eliminating the need for ammonium nitrate fertilizer and reduces fossil fuel reliance by providing biofuel and avoiding natural gas based fertilizer production.

  8. A functionally graded titanium/hydroxyapatite film obtained by sputtering.

    PubMed

    Ozeki, Kazuhide; Yuhta, Toshio; Fukui, Yasuhiro; Aoki, Hideki; Nishimura, Ikuya

    2002-03-01

    A functionally graded film of titanium/hydroxyapatite (HA) was prepared on a titanium substrate using a radio frequency magnetron sputtering. The ratio of titanium to HA was controlled by moving the target shutter. The film was composed of five layers, with overall film thickness of 1 microm. The HA was concentrated close to the surface, while the titanium concentration increased with proximity to the substrate. The bonding strength between the film and the substrate was 15.2 MPa in a pull-out test and the critical load from a scratch test was 58.85 mN. The corresponding values of a pure HA sputtered film were 8.0 MPa and 38.47 mN, respectively. The bonding strength of a pure HA plasma spray coating was 10.4 MPa in the pull-out test. The graded film and the pure HA film were sputter-coated to a thickness of 1 microm on titanium columns (10 mm in length and 4 mm in diameter). These columns were implanted in diaphyses of the femora of six adult dogs and a push-out test was carried out after 2, 4, and 12 weeks. After 12 weeks, the push-out strengths of the graded film, the pure HA film and the non-coated columns were 3.7, 3.5, and 1.0 MPa. PMID:15348621

  9. MODELING AND THE SPUTTER DEPOSITION OF COATINGS ONTO SPHERICAL CAPSULES

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2006-09-19

    The sputter deposition of coatings onto capsules of polymer and oxide shells as well as solid metal spheres is accomplished using a chambered substrate platform. Oxides and metal coatings are sputter deposited through a screen-aperture array onto a 0.3-1.2 mm diameter, solid spheres and hollow shells. Each shell is contained within its own individual chamber within a larger array. Ultrasonic vibration is the method used to produce a random bounce of each capsule within each chamber, in order to produce a coating with uniform thickness. Characterization of thin aluminum-oxide coated, platinum solid spheres and thicker copper-gold layer coated, hollow capsules (of both glass and polymer) show that uniform coatings can be produced using a screen-aperture chambered, substrate platform. Potential advantages of this approach compared to open-bounce pans include improved sample yield and reduced surface roughness from debris minimization. A process model for the coating growth on the capsules is developed to assess selection of the screen aperture based on the effects of sputter deposition parameters and the coating materials.

  10. Direct-current magnetron sputtering for optical coatings

    NASA Astrophysics Data System (ADS)

    Lagana, Paolo; Misiano, Carlo; Simonetti, Enrico

    1994-09-01

    The advantages of optical coatings realized by Sputtering versus thermal evaporation by crucible or Electron Gun, are very well known, but this technique is used only partially for dielectric coatings despite of a wide use in semiconductors and microcircuits, due to the slowness of RF Sputtering processes when starting from dielectric targets. This paper describes a DC Reactive Magnetron Sputtering technique from metal target set up at Ce.Te.V. for deposition of multilayer coatings, with cycle times comparable-or even faster-than conventional solution. The advantages of this process consist in obtaining films with high optical and mechanical performances with high repeatability on room temperature substrates. Pumping cycle can thus be faster and dead time for substrates heating and cooling down can be avoided, characteristics which plastic substrates can particularly take advantage of. Performances of the realized coatings on glass and plastic substrates, together with cycle time and material costs, are finally compared to results obtainable by Electron Beam Gun Reactive Deposition.

  11. Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

    PubMed

    Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

    2015-04-29

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed. PMID:25844637

  12. Stress dependent oxidation of sputtered niobium and effects on superconductivity

    SciTech Connect

    David Henry, M. Wolfley, Steve; Monson, Todd; Clark, Blythe G.; Shaner, Eric; Jarecki, Robert

    2014-02-28

    We report on the suppression of room temperature oxidation of DC sputtered niobium films and the effects upon the superconductive transition temperature, T{sub c}. Niobium was sputter-deposited on silicon dioxide coated 150 mm wafers and permitted to oxidize at room temperature and pressure for up to two years. Resistivity and stress measurements indicate that tensile films greater than 400 MPa resist bulk oxidation with measurements using transmission electron microscope, electron dispersive X-ray spectroscopy, x-ray photoelectric spectroscopy, and secondary ion mass spectrometry confirming this result. Although a surface oxide, Nb{sub 2}O{sub 5}, consumed the top 6–10 nm, we measure less than 1 at. % oxygen and nitrogen in the bulk of the films after the oxidation period. T{sub c} measurements using a SQUID magnetometer indicate that the tensile films maintained a T{sub c} approaching the dirty superconductive limit of 8.4 K after two years of oxidation while maintaining room temperature sheet resistance. This work demonstrates that control over niobium film stress during deposition can prevent bulk oxidation by limiting the vertical grain boundaries ability to oxidize, prolonging the superconductive properties of sputtered niobium when exposed to atmosphere.

  13. Sputtering as a Technique for Applying Tribological Coatings

    NASA Technical Reports Server (NTRS)

    Ramalingam, S.

    1984-01-01

    Friction and wear-induced mechanical failures may be controlled to extend the life of tribological components through the interposition of selected solid materials between contacting surfaces. Thin solid films of soft and hard materials are appropriate to lower friction and enhance the wear resistance of precision tribo-elements. Tribological characteristics of thin hard coats deposited on a variety of ferrous and non-ferrous substrates were tested. The thin hard coats used were titanium nitride films deposited by reactive magnetron sputtering of metallic titanium. High contact stress, low speed tests showed wear rate reductions of one or more magnitude, even with films a few micrometers in thickness. Low contact stress, high speed tests carried out under rather severe test conditions showed that thin films of TiN afforded significant friction reduction and wear protection. Thin hard coats were shown to improve the friction and wear performance of rolling contacts. Satisfactory film-to-substrate adhesion strengths can be obtained with reactive magnetron sputtering. X-ray diffraction and microhardness tests were employed to assess the effectiveness of the sputtering technique.

  14. Binding energy effects in cascade evolution and sputtering

    SciTech Connect

    Robinson, M.T.

    1995-06-01

    The MARLOWE model was extended to include a binding energy dependent on the local crystalline order, so that atoms are bound less strongly to their lattice sites near surfaces or associated damage. Sputtering and cascade evolution were studied on the examples of self-ion irradiations of Cu and Au monocrystals. In cascades, the mean binding energy is reduced {approximately}8% in Cu with little dependence on the initial recoil energy; in Au, it is reduced {approximately}9% at 1 keV and {approximately}15% at 100 keV. In sputtering, the mean binding energy is reduced {approximately}8% in Cu and {approximately}15% in Au with little energy dependence; the yields are increased about half as much. Most sites from which sputtered atoms originate are isolated in both metals. Small clusters of such sites occur in Cu, but there are some large clusters in Au, especially in [111] targets. There are always more large clusters with damage-dependent binding than with a constant binding energy, but only a few clusters are compact enough to be regarded as pits.

  15. Self-Sputtering of Solid and Liquid Phase Tin

    NASA Astrophysics Data System (ADS)

    Coventry, M. D.; Tomchik, C. A.; Ruzic, D. N.

    2004-11-01

    The absolute self-sputtering yields of solid and liquid-phase Sn have been measured for incident ions with energies of 300 to 1000 eV at 45^o using the Ion-surface InterAction eXperiment (IIAX). A Sn divertor^1 would experience self-bombardment from redepositing Sn ions, and its use may be limited by a temperature-enhanced self-sputtering yield. Thus, an understanding of any temperature dependence is a key to predictive modeling of such a device. IIAX uses a Colutron^2 ion source to produce a velocity-filtered Sn^+ beam for sample irradiation. Experiments were carried out with sample temperatures ranging from room temperature to 380^oC. A quartz-crystal microbalance (QCM) monitors sputtering by direct collection of ejected and reflected material; background noise is removed using a reference crystal. VFTRIM^3, which cannot simulate temperature, was used for comparison to recorded data and for data analysis. Hybrid Molecular-Dynamic/Monte Carlo simulations which include temperature effects^4 were also investigated. [1] Brooks, J.N. Fus. Eng. Des. 60 (2002) 515-526. [2] Menzinger, M. and Wahlin, L. Rev. Sci. Instrum. 40 (1969) 102-105. [3] Ruzic, D.N. Nuc. Instrum. Meth. Phys. Res. 47 (1990) 118-125. [4] Allain, J.P., D.N. Ruzic, submitted to Nuc. Instrum. Meth. B, January 2004

  16. Stress dependent oxidation of sputtered niobium and effects on superconductivity

    NASA Astrophysics Data System (ADS)

    David Henry, M.; Wolfley, Steve; Monson, Todd; Clark, Blythe G.; Shaner, Eric; Jarecki, Robert

    2014-02-01

    We report on the suppression of room temperature oxidation of DC sputtered niobium films and the effects upon the superconductive transition temperature, Tc. Niobium was sputter-deposited on silicon dioxide coated 150 mm wafers and permitted to oxidize at room temperature and pressure for up to two years. Resistivity and stress measurements indicate that tensile films greater than 400 MPa resist bulk oxidation with measurements using transmission electron microscope, electron dispersive X-ray spectroscopy, x-ray photoelectric spectroscopy, and secondary ion mass spectrometry confirming this result. Although a surface oxide, Nb2O5, consumed the top 6-10 nm, we measure less than 1 at. % oxygen and nitrogen in the bulk of the films after the oxidation period. Tc measurements using a SQUID magnetometer indicate that the tensile films maintained a Tc approaching the dirty superconductive limit of 8.4 K after two years of oxidation while maintaining room temperature sheet resistance. This work demonstrates that control over niobium film stress during deposition can prevent bulk oxidation by limiting the vertical grain boundaries ability to oxidize, prolonging the superconductive properties of sputtered niobium when exposed to atmosphere.

  17. Low Energy Sputtering Experiments for Ion Engine Lifetime Assessment

    NASA Technical Reports Server (NTRS)

    Duchemin Olivier B.; Polk, James E.

    1999-01-01

    The sputtering yield of molybdenum under xenon ion bombardment was measured using a Quartz Crystal Microbalance. The measurements were made for ion kinetic energies in the range 100-1keV on molybdenum films deposited by magnetron sputtering in conditions optimized to reproduce or approach bulk-like properties. SEM micrographs for different anode bias voltages during the deposition are compared, and four different methods were implemented to estimate the density of the molybdenum films. A careful discussion of the Quartz Crystal Microbalance is proposed and it is shown that this method can be used to measure mass changes that are distributed unevenly on the crystal electrode surface, if an analytical expression is known for the differential mass-sensitivity of the crystal and the erosion profile. Finally, results are presented that are in good agreement with previously published data, and it is concluded that this method holds the promise of enabling sputtering yield measurements at energies closer to the threshold energy in the very short term.

  18. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  19. The negative repetition effect.

    PubMed

    Mulligan, Neil W; Peterson, Daniel J

    2013-09-01

    A fundamental property of human memory is that repetition enhances memory. Peterson and Mulligan (2012) recently documented a surprising negative repetition effect, in which participants who studied a list of cue-target pairs twice recalled fewer targets than a group who studied the pairs only once. Words within a pair rhymed, and across pairs, the target words were drawn from a small set of categories. In the repetition condition, the pairs were initially presented in a random order and then presented a 2nd time blocked by the category of the target words. In the single presentation condition, the pairs were presented only in the blocked order. Participants in the former condition recalled fewer target words on a free recall test despite having seen the word pairs twice (the negative repetition effect). This phenomenon is explored in a series of 5 experiments assessing 3 theoretical accounts of the effect. The experiments demonstrate that the negative repetition effect generalizes over multiple encoding conditions (reading and generative encoding), over different memory tests (free and cued recall), and over delay (5 min and 2 days). The results argue against a retrieval account and a levels-of-processing account but are consistent with the item-specific-relational account, the account upon which the effect was initially predicated. PMID:23421508

  20. Analysis of temperature and enhanced diffusion effects in sputtering of CrSi2

    NASA Astrophysics Data System (ADS)

    Miotello, A.

    1986-06-01

    Previously reported experimental results on sputtering and enhanced diffusion processes in CrSi2 during 100 keVXe+ bombardment at different temperatures have been quantitatively analyzed. The framework for the analysis is a simple theoretical model in which the Si atoms are considered mobile in a matrix of Cr atoms whose density is assumed constant and diffusivity is considered zero everywhere. Erosion velocity of the matrix (due to the sputtering of Cr atoms), sputtering and enhanced diffusion processes of Si atoms are taken into account in the mathematical model. In our analysis we show that the time evolution of the total number of sputtered atoms in binary solids cannot yield an unambigous conclusion as to the existence of preferential sputtering. Further, it is found that in the case of CrSi2 the preferential sputtering of Si atoms depends on the suicide temperature.