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Sample records for stacked metallic layers

  1. Plasmonic broadband absorber by stacking multiple metallic nanoparticle layers

    NASA Astrophysics Data System (ADS)

    Ji, Ting; Peng, Lining; Zhu, Yuntao; Yang, Fan; Cui, Yanxia; Wu, Xueyan; Liu, Liu; He, Sailing; Zhu, Furong; Hao, Yuying

    2015-04-01

    High efficiency, broadband plasmonic absorbers are constructed based on a stack of alternating metallic nanoparticle layers (MNLs) and SiO2 slabs on top of a reflective Ag substrate. Experimental results show that the stacks with thick MNLs absorb light better than those with thin MNLs when the number of MNL/SiO2 cells (N) is small (e.g., 1 or 2), but the situation gets reversed when N is greater than 3. When the nominal thickness of MNL is as thin as 5 nm, the acquired Ag nanoparticles are so small that light penetration through all of the stacked MNLs in the proposed design is possible. Thus, an increase in N leads to a growing number of light trapping elements. Our simulation reveals that the Ag nanoparticles at different layers are hybridized to excite rich localized plasmonic resonances, resulting in multiple absorption peaks at optical frequencies and thus a broader absorption band. The broadband absorbers with an integrated absorption efficiency of 96% over the 300-1100 nm wavelength range were achieved by stacking 18 MNL/SiO2 cells. The proposed absorbers can be used for applications in solar energy harvesting and thermal emission tailoring, due to their easy fabrication procedure and excellent optical properties.

  2. Low-frequency Raman modes as fingerprints of layer stacking configurations of transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Liang, Liangbo; Puretzky, Alexander; Sumpter, Bobby; Meunier, Vincent; Geohegan, David; David B. Geohegan Team; Vincent Meunier Team

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) can be used to determine the exact atomic registration between different layers in few-layer 2D stacks; however, fast and relatively inexpensive optical characterization techniques are essential for rapid development of the field. Using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low-frequency (LF) Raman modes (<50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations [Puretzky and Liang et al, ACS Nano 2015, 9, 6333]. First-principles Raman calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries. Our combined experimental/theoretical work demonstrates the LF Raman modes potentially more effective than HF Raman modes to probe the layer stacking and interlayer interaction for 2D materials. The authors acknowledge support from Eugene P. Wigner Fellowship at the Oak Ridge National Laboratory and the Center for Nanophase Materials Sciences, a DOE Office of Science User Facility.

  3. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    SciTech Connect

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G.; Meunier, Vincent; Geohegan, David B.

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.

  4. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    DOE PAGESBeta

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G.; Meunier, Vincent; et al

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) thatmore » originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.« less

  5. Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations.

    PubMed

    Puretzky, Alexander A; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G; Meunier, Vincent; Geohegan, David B

    2015-06-23

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm(-1)) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries. PMID:25965878

  6. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    NASA Astrophysics Data System (ADS)

    Khalil, M. I.; Atici, O.; Lucotti, A.; Binetti, S.; Le Donne, A.; Magagnin, L.

    2016-08-01

    In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.

  7. 23. Brick coke quencher, brick stack, metal stack to right, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. Brick coke quencher, brick stack, metal stack to right, coke gas pipe to left; in background, BOF building, limestone piles, Levy's Slag Dump. Looking north/northwest - Rouge Steel Company, 3001 Miller Road, Dearborn, MI

  8. The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-08-01

    InGaAs gate stacks comprising the moderate dielectric constant (k) Al2O3 have a significantly lower dispersion in accumulation in comparison to stacks with the high-k HfO2 of the same physical thickness. As a result, a HfO2/Al2O3 bi-layer structure seems attractive in terms of both high effective dielectric constant and low dispersion in accumulation. The influence of Al2O3 thickness on the dispersion was investigated in metal/HfO2/Al2O3/InGaAs gate stacks with a fixed overall dielectric thickness. An effective suppression of the dispersion with the increase of the Al2O3 thickness was observed. However, the Al2O3 thickness required for passivation of the dispersion in accumulation was significantly higher in comparison to both the border traps related tunneling distance in Al2O3 and the minimal thickness required for the Al2O3/InGaAs band offset stabilization. The phenomenon can be explained by the lower dielectric constant of Al2O3 film (compared to the subsequently deposited HfO2 layer), where Al2O3 dielectric constant dependence on the film thickness enhances the dispersion intensity. As a result, the guidelines for the passivation layer engineering are: maximization of both majority carriers band offsets and of the dielectric constant of the passivation layer.

  9. Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacks

    SciTech Connect

    Raasch, D.; Mathieu, C.

    1997-08-01

    The room-temperature wall energy {sigma}{sub w}=4.0{times}10{sup {minus}3}J/m{sup 2} of an exchange-coupled Tb{sub 19.6}Fe{sub 74.7}Co{sub 5.7}/Dy{sub 28.5}Fe{sub 43.2}Co{sub 28.3} double layer stack can be reduced by introducing a soft magnetic intermediate layer in between both layers exhibiting a significantly smaller anisotropy compared to Tb{endash}FeCo and Dy{endash}FeCo. {sigma}{sub w} will decrease linearly with increasing intermediate layer thickness, d{sub IL}, until the wall is completely located within the intermediate layer for d{sub IL}{ge}d{sub w}, where d{sub w} denotes the wall thickness. Thus, d{sub w} can be obtained from the plot {sigma}{sub w} versus d{sub IL}. We determined {sigma}{sub w} and d{sub w} on Gd{endash}FeCo intermediate layers with different anisotropy behavior (perpendicular and in-plane easy axis) and compared the results with data obtained from Brillouin light-scattering measurements, where exchange stiffness, A, and uniaxial anisotropy, K{sub u}, could be determined. With the knowledge of A and K{sub u}, wall energy and thickness were calculated and showed an excellent agreement with the magnetic measurements. A ten times smaller perpendicular anisotropy of Gd{sub 28.1}Fe{sub 71.9} in comparison to Tb{endash}FeCo and Dy{endash}FeCo resulted in a much smaller {sigma}{sub w}=1.1{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=24nm at 300 K. A Gd{sub 34.1}Fe{sub 61.4}Co{sub 4.5} with in-plane anisotropy at room temperature showed a further reduced {sigma}{sub w}=0.3{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=17nm. The smaller wall energy was a result of a different wall structure compared to perpendicular layers. {copyright} {ital 1997 American Institute of Physics.}

  10. An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

    NASA Astrophysics Data System (ADS)

    Xueli, Ma; Hong, Yang; Wenwu, Wang; Huaxiang, Yin; Huilong, Zhu; Chao, Zhao; Dapeng, Chen; Tianchun, Ye

    2014-09-01

    We evaluated the TiN/TaN/TiAl triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and TaN. The thinner TiN and/or thinner in situ TaN capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ TaN capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and TaN thickness are proposed. The thicker TiN prevents the Al diffusion then induces the EWF to shift to mid-gap. However, the TaN plays a different role in effective work function tuning from TiN, due to the Ta—O dipoles formed at the interface between the metal gate and the high-k layer.

  11. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects.

    PubMed

    O'Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N; Duesberg, Georg S

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. PMID:26766208

  12. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

    NASA Astrophysics Data System (ADS)

    O'Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N.; Duesberg, Georg S.

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum.

  13. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

    PubMed Central

    O’Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N.; Duesberg, Georg S.

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. PMID:26766208

  14. Van der Waals stacked 2D layered materials for optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Wang, Qixing; Chen, Yu; Wang, Zhuo; Wee, Andrew T. S.

    2016-06-01

    The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

  15. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices. PMID:26768020

  16. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    SciTech Connect

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  17. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks

    NASA Astrophysics Data System (ADS)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin

    2015-07-01

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO2 layer to the nano-stack of Al2O3/ZrO2. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to -75 ppm/V2 with increasing the thickness of SiO2 from zero to 4 nm, which is more powerful than increasing the thickness of ZrO2 in the Al2O3/ZrO2 stack. This is attributed to counteraction between the positive α for Al2O3/ZrO2 and the negative one for SiO2 in the MIM capacitors with Al2O3/ZrO2/SiO2 stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO2 obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO2, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  18. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Yuzheng; Robertson, John

    2016-06-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  19. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  20. Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

    PubMed Central

    El Mel, Abdel-Aziz; Duvail, Jean-Luc; Gautron, Eric; Xu, Wei; Choi, Chang-Hwan; Angleraud, Benoit; Granier, Agnès

    2012-01-01

    Summary We report on the synthesis and magnetic characterization of ultralong (1 cm) arrays of highly ordered coaxial nanowires with nickel cores and graphene stacking shells (also known as metal-filled carbon nanotubes). Carbon-containing nickel nanowires are first grown on a nanograted surface by magnetron sputtering. Then, a post-annealing treatment favors the metal-catalyzed crystallization of carbon into stacked graphene layers rolled around the nickel cores. The observed uniaxial magnetic anisotropy field oriented along the nanowire axis is an indication that the shape anisotropy dominates the dipolar coupling between the wires. We further show that the thermal treatment induces a decrease in the coercivity of the nanowire arrays. This reflects an enhancement of the quality of the nickel nanowires after annealing attributed to a decrease of the roughness of the nickel surface and to a reduction of the defect density. This new type of graphene–ferromagnetic-metal nanowire appears to be an interesting building block for spintronic applications. PMID:23365798

  1. Imaging Stacking Order in Few-Layer Graphene

    SciTech Connect

    C Lui; Z Li; Z Chen; P Klimov; L Brus; T Heinz

    2011-12-31

    Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene. We find that 15% of exfoliated graphene tri- and tetralayers is composed of micrometer-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding 800 C.

  2. AA-stacked bilayer square ice between graphene layers

    NASA Astrophysics Data System (ADS)

    Sobrino Fernandez Mario, M.; Neek-Amal, M.; Peeters, F. M.

    2015-12-01

    Water confined between two graphene layers with a separation of a few Å forms a layered two-dimensional ice structure. Using large scale molecular dynamics simulations with the adoptable ReaxFF interatomic potential we found that flat monolayer ice with a rhombic-square structure nucleates between the graphene layers which is nonpolar and nonferroelectric. We provide different energetic considerations and H-bonding results that explain the interlayer and intralayer properties of two-dimensional ice. The controversial AA stacking found experimentally [Algara-Siller et al., Nature (London) 519, 443 (2015), 10.1038/nature14295] is consistent with our minimum-energy crystal structure of bilayer ice. Furthermore, we predict that an odd number of layers of ice has the same lattice structure as monolayer ice, while an even number of ice layers exhibits the square ice AA stacking of bilayer ice.

  3. Tests on Double Layer Metalization

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1983-01-01

    28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.

  4. Multiple layer identification label using stacked identification symbols

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F. (Inventor)

    2005-01-01

    An automatic identification system and method are provided which employ a machine readable multiple layer label. The label has a plurality of machine readable marking layers stacked one upon another. Each of the marking layers encodes an identification symbol detectable using one or more sensing technologies. The various marking layers may comprise the same marking material or each marking layer may comprise a different medium having characteristics detectable by a different sensing technology. These sensing technologies include x-ray, radar, capacitance, thermal, magnetic and ultrasonic. A complete symbol may be encoded within each marking layer or a symbol may be segmented into fragments which are then divided within a single marking layer or encoded across multiple marking layers.

  5. Determination of the stacking order of curved few-layered graphene systems

    NASA Astrophysics Data System (ADS)

    Hayashi, Takuya; MuramatsuCurrent Affiliation: Department Of Materials Science; Technology, Nagaoka University Of Technology, 1603-1, Kamitomioka, Nagaoka, 940-2188, Japan, Hiroyuki; ShimamotoCurrent Affiliation: Advanced Manufacturing Research Institute, Aist, 2266-98 Anagahora, Shimoshidami, Moriyama-Ku, Nagoya 463-8560, Japan, Daisuke; Fujisawa, Kazunori; Tojo, Tomohiro; Muramoto, Yoshitaka; Yokomae, Takuya; Asaoka, Toru; Kim, Yoong Ahm; Terrones, Mauricio; Endo, Morinobu

    2012-09-01

    We report a facile method to efficiently visualize the atomic carbon network of curved few-layered graphitic systems including folded bi-layer graphene, nanoribbon edges and multi-walled carbon nanotubes (straight and bent), via the processing of aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM) images. This technique is also able to atomically resolve the structure of overlapping graphene layers with different orientations, thus enabling us to determine the stacking order of multiple graphene layers. To the best of our knowledge, we are the first to identify the stacking order of a misoriented 4-layer closed-edge graphene and a metal-semiconductor double-walled carbon nanotube junction.

  6. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Bhartiya, S.; Gupta, M.; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    We report on the dimensional crossover of electron weak localization in ZnO/TiOx stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiOx on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ˜6-65 nm by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R⊙) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R⊙(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R⊙ and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiOx stacked layers which have potential applications in the field of transparent oxide electronics.

  7. Stacking dependent electronic structures of transition metal dichalcogenides heterobilayer

    NASA Astrophysics Data System (ADS)

    Lee, Yea-Lee; Park, Cheol-Hwan; Ihm, Jisoon

    The systematic study of the electronic structures and optical properties of the transition metal dichalcogenides (TMD) heterobilayers can significantly improve the designing of new electronic and optoelectronic devices. Here, we theoretically study the electronic structures and optical properties of TMD heterobilayers using the first-principles methods. The band structures of TMD heterobilayer are shown to be determined by the band alignments of the each layer, the weak interlayer interactions, and angle dependent stacking patterns. The photoluminescence spectra are investigated using the calculated band structures, and the optical absorption spectra are examined by the GW approximations including the electron-hole interaction through the solution of the Bethe-Salpeter equation. It is expected that the weak interlayer interaction gives rise to the substantial interlayer optical transition which will be corresponding to the interlayer exciton.

  8. Stacking faults in a layered cobalt tellurium phosphate oxochloride

    NASA Astrophysics Data System (ADS)

    Zimmermann, Iwan; Johnsson, Mats

    2015-02-01

    The new compound Co2Te3(PO4)O6Cl was synthesized by chemical reactions in a sealed and evacuated silica tube. The crystal structure was solved from single crystal diffraction data and is made up by charge neutral layers. Within the layers two types of chains are made up by edge sharing [CoO6] and [CoO5Cl] polyhedra respectively. The chains are separated by tellurium oxide and phosphate building blocks. There are only weak Van der Waals interactions in between the layers and severe diffuse scattering is observed due to faulted stacking of the layers. Structure solutions in a P-1 triclinic cell and a larger monoclinic cell in P21/c are discussed and compared to a computer generated model. The reasons for the stacking faults may be due to that there are two positions available for each layer that results in similar connectivity to the next layer in addition to the relatively wide channels in between the layers that reduce the Van der Waals interactions in between them.

  9. Stacking fault and twinning in nanocrystalline metals.

    SciTech Connect

    Liao, Xiaozhou; Zhao, Y.; Srivilliputhur, S. G.; Zhou, F.; Lavernia, E. J.; Baskes, M. I.; Zhu, Y. T.; Xu, H. F.

    2004-01-01

    Nanocrystalline Al processed by cryogenic ball-milling and nanocrystalline Cu processed by high-pressure torsion at a very low strain rate and at room temperature were investigated using high-resolution transmission electron microscopy. For nanocrystalline Al, we observed partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults and twinning. We also observed deformation twins formed via two other mechanisms recently predicted by molecular dynamic simulations. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high stacking fault energy. For nanocrystalline Cu, we found that twinning becomes a major deformation mechanism, which contrasts with the literature reports that deformation twinning in coarse-grained Cu occurs only under high strain rate and/or low temperature conditions and that reducing grain sizes suppresses deformation twinning. The investigation of the twinning morphology suggests that twins and stacking faults in nanocrystalline Cu were formed through partial dislocation emissions from grain boundaries. This mechanism differs from the pole mechanism operating in coarse-grained Cu.

  10. A microcasted PDMS vacuum pad and its application for stacking thin ceramic layers

    NASA Astrophysics Data System (ADS)

    Hwang, Sung Jin; Lee, Sang Min; Jung, Im Deok; Jung, Phill Gu; Go, Jeung Sang; Ko, Jong Soo

    2009-08-01

    A PDMS vacuum pad for stacking very thin green sheets with a 3 µm thick dielectric layer is introduced and fabricated. Its applicability for producing multi-layer ceramic capacitors (MLCCs) is evaluated. Five micro-holes with a diameter and depth of 70 µm are formed on a single vacuum-line unit that is of 120 µm width, 100 µm depth and 2 mm length. Each vacuum-line unit with five micro-holes is deployed at 6 mm intervals on a PDMS vacuum pad of size 166 mm × 166 mm. To fabricate the PDMS vacuum pads, a mold with an obverse structure to that of the PDMS vacuum pad is needed. The metal mold has a two-stage nickel microstructure, the first stage for forming the vacuum lines and the second stage for forming the micro-holes. To fabricate the mold, micromachining processes, including photolithography, nickel/copper electroforming and chemical mechanical polishing, were conducted twice on a precision-machined SUS substrate with a size of 210 mm × 210 mm. The PDMS vacuum pads were fabricated through a microcasting process. Using the PDMS vacuum pad, 320 layers of green sheets, upon which nickel electrodes were patterned on 3 µm thick dielectric layers, were consecutively stacked. It has been observed that the stacked green sheets were very flat and uniform without any distortion or wrinkles. It is believed that the uniform stacking will greatly help to improve the production yield as well as enhance the reliability of MLCCs.

  11. Enforced Layer-by-Layer Stacking of Energetic Salts towards High-Performance Insensitive Energetic Materials.

    PubMed

    Zhang, Jiaheng; Mitchell, Lauren A; Parrish, Damon A; Shreeve, Jean'ne M

    2015-08-26

    Development of modern high-performance insensitive energetic materials is significant because of the increasing demands for both military and civilian applications. Here we propose a rapid and facile strategy called the "layer hydrogen bonding pairing approach" to organize energetic molecules via layer-by-layer stacking, which grants access to tunable energetic materials with targeted properties. Using this strategy, an unusual energetic salt, hydroxylammonium 4-amino-furazan-3-yl-tetrazol-1-olate, with good detonation performances and excellent sensitivities, was designed, synthesized, and fully characterized. In addition, the expected unique layer-by-layer structure with a high crystal packing coefficient was confirmed by single-crystal X-ray crystallography. Calculations indicate that the layer-stacking structure of this material can absorb the mechanical stimuli-induced kinetic energy by converting it to layer sliding, which results in low sensitivity. PMID:26262555

  12. Stack of Layers at 'Payson' in Meridiani Planum

    NASA Technical Reports Server (NTRS)

    2006-01-01

    The stack of fine layers exposed at a ledge called 'Payson' on the western edge of 'Erebus Crater' in Mars' Meridiani Planum shows a diverse range of primary and secondary sedimentary textures formed billions of years ago. These structures likely result from an interplay between windblown and water-involved processes.

    The panoramic camera (Pancam) on NASA's Mars Exploration Rover Opportunity acquired the exposures for this image on the rover's 749th Martian day (March 3, 2006) This view is an approximately true-color rendering mathematically generated from separate images taken through all of the left Pancam's 432-nanometer to 753-nanometer filters.

  13. Nonlinear pulse propagation in one-dimensional metal-dielectric multilayer stacks: ultrawide bandwidth optical limiting.

    PubMed

    Scalora, Michael; Mattiucci, Nadia; D'Aguanno, Giuseppe; Larciprete, MariaCristina; Bloemer, Mark J

    2006-01-01

    We numerically study the nonlinear optical properties of metal-dielectric photonic band gap structures in the pulsed regime. We exploit the high chi3 of copper metal to induce nonlinear effects such as broadband optical limiting, self-phase modulation, and unusual spectral narrowing of high intensity pulses. We show that in a single pass through a typical, chirped multilayer stack nonlinear transmittance and peak powers can be reduced by nearly two orders of magnitude compared to low light intensity levels across the entire visible range. Chirping dielectric layer thickness dramatically improves the linear transmittance through the stack and achieves large fields inside the copper to access the large nonlinearity. At the same time, the linear properties of the stack block most of the remaining electromagnetic spectrum. PMID:16486291

  14. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    PubMed Central

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  15. Metal deposition using seed layers

    DOEpatents

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  16. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

    PubMed Central

    2014-01-01

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (Dit) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower Dit. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property. PMID:25246869

  17. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    NASA Technical Reports Server (NTRS)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  18. Effect of vacancy defects on generalized stacking fault energy of fcc metals.

    PubMed

    Asadi, Ebrahim; Zaeem, Mohsen Asle; Moitra, Amitava; Tschopp, Mark A

    2014-03-19

    Molecular dynamics (MD) and density functional theory (DFT) studies were performed to investigate the influence of vacancy defects on generalized stacking fault (GSF) energy of fcc metals. MEAM and EAM potentials were used for MD simulations, and DFT calculations were performed to test the accuracy of different common parameter sets for MEAM and EAM potentials in predicting GSF with different fractions of vacancy defects. Vacancy defects were placed at the stacking fault plane or at nearby atomic layers. The effect of vacancy defects at the stacking fault plane and the plane directly underneath of it was dominant compared to the effect of vacancies at other adjacent planes. The effects of vacancy fraction, the distance between vacancies, and lateral relaxation of atoms on the GSF curves with vacancy defects were investigated. A very similar variation of normalized SFEs with respect to vacancy fractions were observed for Ni and Cu. MEAM potentials qualitatively captured the effect of vacancies on GSF. PMID:24589571

  19. Stacking faults and superstructures in a layered brownmillerite

    PubMed Central

    Krüger, H.; Stöber, S.; Welberry, T. R.; Withers, R. L.; Fitz Gerald, J. D.

    2011-01-01

    Single crystals of Ca4Fe2Mn0.5Ti0.5O9 have been synthesized using a flux method. The structural characterization using single-crystal X-ray diffraction revealed the space group Amma and unit-cell dimensions of a = 5.3510 (6), b = 26.669 (3), c = 5.4914 (6) Å. The structure is isotypic with Sr3NdFe3O9 [Barrier et al. (2005 ▸). Chem. Mater. 17, 6619–6623] and exhibits separated brownmillerite-type layers. One-dimensional diffuse scattering shows that the unit cell is doubled along c by alternating the intra-layer order of tetrahedral chains, causing stacking faults along the b direction. A computer simulation was performed, proving that the observed intensity variations along the diffuse scattering rods originates from two different local structures depending on the configuration of the tetrahedral chains. Selected-area electron diffraction experiments exhibit well ordered regions characterized by satellite reflections corresponding to two different superstructures. Both superstructures can be described using the superspace group A21/m(0βγ)0s, with γ = 0.5 and β ≃ 0.27 or β = 0. PMID:22101537

  20. Health-risk assessment of incinerator stack emissions: Trace metals

    SciTech Connect

    Lee, Jinhong.

    1990-01-01

    The research presented in this dissertation centers on the development of a method for health risk assessment of incinerator stack emissions within the context of multiple exposure pathways and on its application to a problem of contemporary interest. The emphasis is on toxic metal emissions from municipal solid waste (MSW) incinerators. A comparison of the amount of metal emissions shows that toxic metal emissions from MSW incinerators are generally of the same order of magnitude as those from hazardous waste incinerators. A hazard index for stack emitted metals based on toxicity and quantity are developed in this dissertation to screen metals which are important from a risk view-point. From this hazard index, lead and mercury are added to the known carcinogenic metals, i.e., arsenic, beryllium, cadmium, chromium, and nickel as candidates for the assessment. The method presented in this dissertation consists of hazard identification and hazard quantification. If a substance is identified as a potential human carcinogen, the carcinogenicity may be related to the chemical form of a substance and the route of exposure. Regarding the carcinogenic potency of a pollutant, the chemical form of a substance and the route of exposure is investigated. This type of information with regard to carcinogenic uncertainty is incorporated into hazard quantification. The appropriate carcinogenic group of a pollutant is also identified. In order to quantify the human health risks for the 7 metals, the following are determined in this dissertation: emission factors; mass particle-size distributions; air dispersion models; exposure assessment models; population data; and unit risks or cancer potency factors.

  1. A metallic interconnect for a solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    England, Diane Mildred

    A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale

  2. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  3. Energy dissipation in intercalated carbon nanotube forests with metal layers

    NASA Astrophysics Data System (ADS)

    Boddu, Veera M.; Brenner, Matthew W.

    2016-02-01

    Vertically aligned carbon nanotube (CNT) forests were synthesized to study their quasi-static mechanical properties in a layered configuration with metallization. The top and bottom surfaces of CNT forests were metalized with Ag, Fe, and In using paste, sputtering, and thermal evaporation, respectively. Stacks of one, two, and three layers of these forests were assembled and compressed to measure their mechanical properties. The samples were strain limited to 0.7, and the results indicate that energy dissipation is approximately linear with respect to the number of layers and relatively independent of metal type. The energy per unit volume was approximately the same for all samples. Successive stacking of CNT forests reduces local buckling events, which is enhanced with a thick Ag deposition on the CNT forest surface. Young's modulus was also observed to increase as the number of layers was increased. These results are useful in the design of composite materials for high energy absorption and high stiffness applications.

  4. Subwavelength electromagnetic energy transport by stack of metallic nanorings

    NASA Astrophysics Data System (ADS)

    Jafari, M. R.; Ebrahimi, F.; Nooshirvani, M.

    2010-09-01

    In this paper, we consider linear ordered stack of metallic nanorings in the presence of Aharonov-Bohm magnetic flux for externally tunable electromagnetic energy transport below the diffraction limit. Using random phase approximation, we demonstrate that such structure supports propagating surface plasmon modes with negative group velocities and with magnetic flux dependent frequencies. Our results for dispersion relations, bandwidths, and tunabilities of surface plasmon modes give an explicit demonstration that nanoring based subwavelength waveguides are potential candidate for electromagnetic energy transport below the diffraction limit in the terahertz part of spectrum.

  5. Compensation of loss to approach -1 effective index by gain in metal-dielectric stacks

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Jiang, H.; Gralak, B.; Enoch, S.; Tayeb, G.; Lequime, M.

    2009-06-01

    We propose a theoretical study of optimization of metal-dielectric multilayer in order to approach -1 effective refractive index for transverse magnetic waves and a wavelength in the visible. The absorption losses of metal appear to be a crucial factor that affects the effective properties of the multilayer. Taking advantage of the dispersion relation of Bloch modes, we show that the losses not only decrease the transmission of the stack, but also change the negatively refracted angle. Then, we propose that using a gain-providing semiconductor (GaN) may allow compensating for the losses in metal layers. In theory, the performances of the structure can be improved greatly when gain is involved. When considering finite thickness structures, and with appropriate thickness for the terminating layers, it is possible to obtain a high transmission of the structure. A near -1 effective index metal-dielectric stack with high transmission may pave the way to the realization of negative quasi-isotropic refraction in the visible or ultraviolet wavelength range.

  6. Stacking Fault Enriching the Electronic and Transport Properties of Few-Layer Phosphorenes and Black Phosphorus.

    PubMed

    Lei, Shuangying; Wang, Han; Huang, Lan; Sun, Yi-Yang; Zhang, Shengbai

    2016-02-10

    Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named Aδ, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles calculation. With its low formation energy, the Aδ stacking could exist in FLPs and BP as a stacking fault. The presence of the Aδ stacking fault induces a direct to indirect transition of the band gap in FLPs. It also affects the carrier mobilities by significantly increasing the carrier effective masses. More importantly, the Aδ stacking enables the fabrication of a whole spectrum of lateral junctions with all the type-I, II, and III alignments simply through the manipulation of the van der Waals stacking without resorting to any chemical modification. This is achieved by the widely tunable electron affinity and ionization potential of FLPs and BP with the Aδ stacking. PMID:26799596

  7. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    NASA Astrophysics Data System (ADS)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-06-01

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. A step-by-step in situ procedure by deposition of AlOx and hafnium oxide (HfOx) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO2/AlOx/GeOx/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 1011 cm-2eV-1 with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  8. Control of layer stacking in CVD graphene under quasi-static condition.

    PubMed

    Subhedar, Kiran M; Sharma, Indu; Dhakate, Sanjay R

    2015-09-14

    The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking. PMID:26245487

  9. Four-Dimensional Lung Treatment Planning in Layer-Stacking Carbon Ion Beam Treatment: Comparison of Layer-Stacking and Conventional Ungated/Gated Irradiation

    SciTech Connect

    Mori, Shinichiro; Kanematsu, Nobuyuki; Asakura, Hiroshi; Sharp, Gregory C.; Kumagai, Motoki; Dobashi, Suguru; Nakajima, Mio; Yamamoto, Naoyoshi; Kandatsu, Susumu; Baba, Masayuki

    2011-06-01

    Purpose: We compared four-dimensional (4D) layer-stacking and conventional carbon ion beam distribution in the treatment of lung cancer between ungated and gated respiratory strategies using 4DCT data sets. Methods and Materials: Twenty lung patients underwent 4DCT imaging under free-breathing conditions. Using planning target volumes (PTVs) at respective respiratory phases, two types of compensating bolus were designed, a full single respiratory cycle for the ungated strategy and an approximately 30% duty cycle for the exhalation-gated strategy. Beams were delivered to the PTVs for the ungated and gated strategies, PTV(ungated) and PTV(gated), respectively, which were calculated by combining the respective PTV(Tn)s by layer-stacking and conventional irradiation. Carbon ion beam dose distribution was calculated as a function of respiratory phase by applying a compensating bolus to 4DCT. Accumulated dose distributions were calculated by applying deformable registration. Results: With the ungated strategy, accumulated dose distributions were satisfactorily provided to the PTV, with D95 values for layer-stacking and conventional irradiation of 94.0% and 96.2%, respectively. V20 for the lung and Dmax for the spinal cord were lower with layer-stacking than with conventional irradiation, whereas Dmax for the skin (14.1 GyE) was significantly lower (21.9 GyE). In addition, dose conformation to the GTV/PTV with layer-stacking irradiation was better with the gated than with the ungated strategy. Conclusions: Gated layer-stacking irradiation allows the delivery of a carbon ion beam to a moving target without significant degradation of dose conformity or the development of hot spots.

  10. Mechanism Underlying Stacking-Layer Effect of Dielectric Properties of Multilayer Ceramic Capacitors

    NASA Astrophysics Data System (ADS)

    Yokomizo, Satoshi; Hoshina, Takuya; Takeda, Hiroaki; Taniguchi, Katsuya; Mizuno, Youichi; Chazono, Hirokazu; Tsurumi, Takaaki

    2010-04-01

    The stacking-layer effect in multilayer ceramic capacitors (MLCCs) is a phenomenon in which the dielectric permittivity of dielectric layers increases with increasing number of layers. To elucidate the mechanism underlying this effect, we performed a simulation of residual stress in MLCCs by the finite element method (FEM) as well as dielectric measurements under uniaxial compressive stress. The FEM analysis revealed that tensile stress along the stacking direction was induced in dielectric layers owing to the difference in thermal expansion coefficient between internal electrodes and dielectric layers. The results of dielectric measurements indicated that the shell part in the dielectrics of MLCCs played an important role in the stress dependence of dielectric properties. The mechanism underlying the stacking-layer effect proposed in this study was based on the enhancement of polarization rotations in polar nanoregions in the relaxor by the tensile stress in dielectric layers.

  11. Inter-layered clay stacks in Jurassic shales

    NASA Technical Reports Server (NTRS)

    Pye, K.; Krinsley, D. H.

    1983-01-01

    Scanning electron microscopy in the backscattered electron mode is used together with energy-dispersive X-ray microanalysis to show that Lower Jurassic shales from the North Sea Basin contain large numbers of clay mineral stacks up to 150 microns in size. Polished shale sections are examined to determine the size, shape orientation, textural relationships, and internal compositional variations of the clays. Preliminary evidence that the clay stacks are authigenic, and may have formed at shallow burial depths during early diagenesis, is presented.

  12. Metal Gate (TiN, TiC, TaN) Film Stack Stress

    NASA Astrophysics Data System (ADS)

    Bello, A. F.; Paul, Abhijeet; Kim, Hoon

    2015-10-01

    Successful stress engineering in semiconductor device structures must consider all the contributions to the stress field including those not typically considered for stress, such as work function metal (WFM) gate layers that are used to tune to the desired work function level. These films induce stress especially since they are so close to the channel region. In this study we measure stress from blanket layer films and combinations of TiN, TiC, and TaN deposited on Hf oxide, at thicknesses that are typically used for advanced metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Tungsten (W) deposited on top of the WFM layer stacks is also measured. For combination film stacks, the stress is measured after each deposition step. The induced stress from the WFM is significant, in the range of hundreds of MPa, and varies according to the thickness and processing conditions such as annealing temperature and time, etc. Results from these blanket film measurements were used as a guide for technology computer-aided design (TCAD) modeling of the stress field in FinFET structures with design rules comparable to 10-nm technology. The tensor stress components identify areas of compressive and tensile stress and with a magnitude similar to expected results. The stress field could be used to calculate the FinFET device performance, and in this case an example is provided with the relative improvement in drain current.

  13. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    PubMed

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-01

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise. PMID:27295399

  14. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, C.K.; Lesuer, D.R.

    1995-07-04

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

  15. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, Chol K.; Lesuer, Donald R.

    1995-01-01

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

  16. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES, CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  17. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES - CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  18. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    NASA Astrophysics Data System (ADS)

    Cho, Ikjun; Kim, Beom Joon; Ryu, Sook Won; Cho, Jeong Ho; Cho, Jinhan

    2014-12-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-AuNPs) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-AuNP)1) with a number density of 1.82 × 1012 cm-2, the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four AuNP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔVth) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 106) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.

  19. Ternary metal-rich sulfide with a layered structure

    DOEpatents

    Franzen, Hugo F.; Yao, Xiaoqiang

    1993-08-17

    A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

  20. Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Gupta, Vishakha; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Deshmukh, Mandar

    We present quantum Hall measurements on a high quality encapsulated tri-layer graphene device. Low temperature field effect mobility of this device is around 500,000 cm2/Vs and we see SdH oscillations at a magnetic field as low as 0.3 T. Quantum Hall measurements confirm that the chosen tri layer graphene is Bernal (ABA) stacked. Due to the presence of both mass-less monolayer like Dirac fermions and massive bi-layer like Dirac fermions in Bernal stacked tri-layer graphene, there are Landau level crossings between monolayer and bi-layer bands in quantum Hall regime. Although most of the Landau Level crossings are predominantly present on the electron sides, we also observe signatures of the crossings on the hole side. This behaviour is consistent with the asymmetry of electron and hole in ABA tri-layer graphene. We observe a series of crossings of the spin and valley resolved Landau Levels.

  1. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

    NASA Astrophysics Data System (ADS)

    Winter, R.; Krylov, I.; Cytermann, C.; Tang, K.; Ahn, J.; McIntyre, P. C.; Eizenberg, M.

    2015-08-01

    The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

  2. Stacking Sequence and Layer-Type Changes in Topologically Close-Packed Structures.

    NASA Astrophysics Data System (ADS)

    Pei, Shiyou

    1988-12-01

    Crystal structure changes in several A _3B-type quasi-binary alloy series, involving Fe, Co, Ni, Cu, Pd and Pt as the A-component elements and Ti, V, Zr and Nb as the B-component elements, have been explored experimentally using X-ray and electron diffraction. The aim of this work was to discover various stacking sequence and ordered layer-type changes in close-packed structures. Our experimental data further confirm that the hexagonality of the stacking always increases in these alloy series as either the electron concentration (e/a) of a given alloy, or the size ratio (R_{rm B} /R_{rm A}) between two types of atoms is increased. This trend is consistent with the results observed by earlier workers in similar alloy systems. Interestingly, we also note that these observed trends are independent of the component, either the A- or B-, and of the type of stacking layers, either the triangularly-ordered (T-type) or the rectangularly -ordered (R-type), involved in the substitutional change. In addition, two new paths of stacking sequence changes have been established through our experimental work, namely, 3 to 3 to 2 and 1 to 5 to 2. An Ising model has been explored to discover if the observed stacking sequence changes can be interpreted in terms of interactions between a few adjacent layers. Using these interactions as phenomenological parameters, a stacking stability map was constructed showing the arrangement of predicted ground state phases on a two-dimensional parameter -plane. Comparing this map with the known experimental data, it was found that the position and the extent of phase regions in the derived map are rather similar to several real composition phase diagrams. Therefore, such a map can provide useful information about the stacking sequence changes (e.g., allowed or excluded stacking arrangements for the neighboring phases) to be expected in an actual alloy phase diagrams. In a different approach, a total energy calculation utilizing the linearized

  3. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  4. Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

    PubMed

    Chen, Xianping; Tan, Chunjian; Yang, Qun; Meng, Ruishen; Liang, Qiuhua; Jiang, Junke; Sun, Xiang; Yang, D Q; Ren, Tianling

    2016-06-28

    Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP. PMID:27250915

  5. Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

    SciTech Connect

    Hossain, M.A; Burkhardt, Mark H.; Sarkar, S.; Ohldag, H.; Chuang, Y.-D.; Scholl, A.; Young, A.T.; Doran, A.; Dessau, D.S.; Zheng, H.; Mitchell, J.F.; Durr, H.A.; Stohr, J.

    2012-09-11

    We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

  6. Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers.

    PubMed

    Manh, Tung; Nguyen, Anh-Tuan Thai; Johansen, Tonni F; Hoff, Lars

    2014-02-01

    This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon-polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (110)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5mm long trenches that were subsequently filled with Spurr's epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon-polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, -6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband. PMID:24041498

  7. Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers

    NASA Astrophysics Data System (ADS)

    Plechinger, G.; Mooshammer, F.; Castellanos-Gomez, A.; Steele, G. A.; Schüller, C.; Korn, T.

    2015-09-01

    We perform an optical spectroscopy study to investigate the properties of different artificial MoS2 bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS2 in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscopy, second-harmonic-generation microscopy and photoluminescence measurements allows us to determine the degree of interlayer coupling in our samples. We find that even for electronically decoupled artificial structures, which show the same valley polarization degree as the constituent MoS2 monolayers at low temperatures, there is a resonant energy transfer between individual layers which acts as an effective luminescence quenching mechanism.

  8. Inverse AVO problem for a stack of layers

    NASA Astrophysics Data System (ADS)

    Malovichko, Liliya

    2015-09-01

    The problem of estimating thin layered model parameters by amplitude variation with offset (AVO) inversion has been studied. The motivation was resolving of the thin layers in inverted prestack seismic data as it contains more information on elastic properties of the subsurface than poststack seismic data. In this paper, an algorithm for solving the prestack inverse AVO problem in the case of multilayered media is derived. This algorithm is based on iterative corrections to the parameters of the initial model which tend to minimise the misfits between observed and synthetic seismograms. The synthetic seismograms are calculated using the reflection-transmission (RT)-matrices method, assuming a plane-wave with respect to the source position. A regularised Gauss-type algorithm for the inversion of prestack seismic data has been used. A differential seismogram computation algorithm to characterise the sensitivity of the seismic signal to the variations of a model parameter was used. The derived solution of the inverse problem is constructed in the time domain. This gives a slight advantage because it allows for visual control of the solution process. One can monitor the amplitude reduction of the data residual (difference between observed and synthetic seismograms) during the iteration process. Numerical examples show the accuracy and efficiency of the method.

  9. Large area compatible broadband superabsorber surfaces in the VIS-NIR spectrum utilizing metal-insulator-metal stack and plasmonic nanoparticles.

    PubMed

    Dereshgi, Sina Abedini; Okyay, Ali Kemal

    2016-08-01

    Plasmonically enhanced absorbing structures have been emerging as strong candidates for photovoltaic (PV) devices. We investigate metal-insulator-metal (MIM) structures that are suitable for tuning spectral absorption properties by modifying layer thicknesses. We have utilized gold and silver nanoparticles to form the top metal (M) region, obtained by dewetting process compatible with large area processes. For the middle (I) and bottom (M) layers, different dielectric materials and metals are investigated. Optimum MIM designs are discussed. We experimentally demonstrate less than 10 percent reflection for most of the visible (VIS) and near infrared (NIR) spectrum. In such stacks, computational analysis shows that the bottom metal is responsible for large portion of absorption with a peak of 80 percent at 1000 nm wavelength for chromium case. PMID:27505733

  10. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

    NASA Astrophysics Data System (ADS)

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C. S. Suchand; Feng, Yuan Ping; Nijhuis, Christian A.; Loh, Kian Ping

    2014-11-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  11. A novel method of fabricating laminated silicone stack actuators with pre-strained dielectric layers

    NASA Astrophysics Data System (ADS)

    Hinitt, Andrew D.; Conn, Andrew T.

    2014-03-01

    In recent studies, stack based Dielectric Elastomer Actuators (DEAs) have been successfully used in haptic feedback and sensing applications. However, limitations in the fabrication method, and materials used to con- struct stack actuators constrain their force and displacement output per unit volume. This paper focuses on a fabrication process enabling a stacked elastomer actuator to withstand the high tensile forces needed for high power applications, such as mimetics for mammalian muscle contraction (i.e prostheses), whilst requiring low voltage for thickness-mode contractile actuation. Spun elastomer layers are bonded together in a pre-strained state using a conductive adhesive filler, forming a Laminated Inter-Penetrating Network (L-IPN) with repeatable and uniform electrode thickness. The resulting structure utilises the stored strain energy of the dielectric elas- tomer to compress the cured electrode composite material. The method is used to fabricate an L-IPN example, which demonstrated that the bonded L-IPN has high tensile strength normal to the lamination. Additionally, the uniformity and retained dielectric layer pre-strain of the L-IPN are confirmed. The described method is envisaged to be used in a semi-automated assembly of large-scale multi-layer stacks of pre-strained dielectric layers possessing a tensile strength in the range generated by mammalian muscle.

  12. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers.

    PubMed

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C S Suchand; Feng, Yuan Ping; Nijhuis, Christian A; Loh, Kian Ping

    2014-01-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films. PMID:25410480

  13. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  14. DIRECT DETERMINATION OF THE STACKING ORDER IN GD2O3 EPI LAYERS ON GAAS.

    SciTech Connect

    YACOBY,Y.; SOWWAN,M.; PINDAK,R.; CROSS,J.; WALKO,D.; STERN,E.; PITNEY,J.; MACHARRIE,R.; HONG,M.; CLARKE,R.

    2002-12-06

    We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.

  15. Metal-insulator-metal capacitors' current instability improvement using dielectric stacks to prevent oxygen vacancies formation

    NASA Astrophysics Data System (ADS)

    Manceau, J.-P.; Bruyere, S.; Jeannot, S.; Sylvestre, A.; Gonon, P.

    2007-09-01

    Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

  16. Layer-by-layer paper-stacking nanofibrous membranes to deliver adipose-derived stem cells for bone regeneration

    PubMed Central

    Wan, Wenbing; Zhang, Shiwen; Ge, Liangpeng; Li, Qingtao; Fang, Xingxing; Yuan, Quan; Zhong, Wen; Ouyang, Jun; Xing, Malcolm

    2015-01-01

    Bone tissue engineering through seeding of stem cells in three-dimensional scaffolds has greatly improved bone regeneration technology, which historically has been a constant challenge. In this study, we researched the use of adipose-derived stem cell (ADSC)-laden layer-by-layer paper-stacking polycaprolactone/gelatin electrospinning nanofibrous membranes for bone regeneration. Using this novel paper-stacking method makes oxygen distribution, nutrition, and waste transportation work more efficiently. ADSCs can also secrete multiple growth factors required for osteogenesis. After the characterization of ADSC surface markers CD29, CD90, and CD49d using flow cytometry, we seeded ADSCs on the membranes and found cells differentiated, with significant expression of the osteogenic-related proteins osteopontin, osteocalcin, and osteoprotegerin. During 4 weeks in vitro, the ADSCs cultured on the paper-stacking membranes in the osteogenic medium exhibited the highest osteogenic-related gene expressions. In vivo, the paper-stacking scaffolds were implanted into the rat calvarial defects (5 mm diameter, one defect per parietal bone) for 12 weeks. Investigating with microcomputer tomography, the ADSC-laden paper-stacking membranes showed the most significant bone reconstruction, and from a morphological perspective, this group occupied 90% of the surface area of the defect, produced the highest bone regeneration volume, and showed the highest bone mineral density of 823.06 mg/cm3. From hematoxylin and eosin and Masson staining, the new bone tissue was most evident in the ADSC-laden scaffold group. Using quantitative polymerase chain reaction analysis from collected tissues, we found that the ADSC-laden paper-stacking membrane group presented the highest osteogenic-related gene expressions of osteocalcin, osteopontin, osteoprotegerin, bone sialoprotein, runt-related transcription factor 2, and osterix (two to three times higher than the control group, and 1.5 times higher than

  17. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    NASA Astrophysics Data System (ADS)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  18. Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy

    SciTech Connect

    Lu, Xin; Utama, M. Iqbal Bakti; Lin, Junhao; Luo, Xin; Zhao, Yanyuan; Zhang, Jun; Pantelides, Sokrates T.; Zhou, Wu; Quek, Su Ying; Xiong, Qihua

    2015-07-02

    Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.

  19. Biaxially textured metal substrate with palladium layer

    DOEpatents

    Robbins, William B [Maplewood, MN

    2002-12-31

    Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

  20. Ceramic TBS/porous metal compliant layer

    NASA Technical Reports Server (NTRS)

    Tolokan, Robert P.; Jarrabet, G. P.

    1992-01-01

    Technetics Corporation manufactures metal fiber materials and components used in aerospace applications. Our technology base is fiber metal porous sheet material made from sinter bonded metal fibers. Fiber metals have percent densities (metal content by volume) from 10 to 65 percent. Various topics are covered and include the following: fiber metal materials, compliant layer thermal bayer coatings (TBC's), pad properties, ceramic/pad TBC design, thermal shock rig, fabrication, and applications.

  1. Effect of inhomogeneous microstructure of granular layer on inter granular/inter layer exchange coupling in stacked perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Tham, Kim Kong; Saito, Shin; Hasegawa, Daiji; Itagaki, Norikazu; Hinata, Shintaro; Ishibashi, Shinichi; Takahashi, Migaku

    2012-11-01

    The effect of inhomogeneous microstructure of granular layer on inter granular/inter layer exchange coupling in stacked perpendicular recording media is studied by varying SiO2 content of CoCrPt-SiO2 granular layer. From cross-section and plane-view TEM observation, it can be concluded that each magnetic grain at cap layer (CL) grows on one magnetic grain of granular layer (GL), and inhomogeneous nucleation site at GL leads to inhomogeneous initial growth of continuous layer at CL. This phenomenon leads to the increase of inter granular coupling fluctuation in CL. Evaluation of inter granular coupling between magnetic grains at GL in stacked media with CL deposited directly on GL shows average and fluctuation of exchange coupling constant of around 2.9 erg/cm2 and 0.6 erg/cm2. In order to reduce the inter granular coupling, spacer layer (SL) with Pd material was inserted between GL and CL. As a result, average and fluctuation of exchange coupling constant decrease to 1.4 erg/cm2 and 0.3 erg/cm2 which suggests that by inserting a SL with small ferromagnetic exchange coupling between GL and CL will make it possible to control the inter granular coupling between magnetic grains at GL with CoCrPt-oxide material.

  2. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  3. Impact of the Stack Order in Cu-Zn-Sn Metal Precursors on the Properties of Cu2ZnSnS4 Thin Films

    SciTech Connect

    Abusnina, Mohamed; Matin, Mohammad; Moutinho, Helio; Al-Jassim, Mowafak

    2015-06-14

    Cu2ZnSnS4 (CZTS) thin films were grown by the annealing of metallic precursors with different stack orders in sulfur atmosphere. The sequential deposition of the metal layers from single Cu, Zn, and Sn targets on Mo-coated soda-lime glass substrates was carried out using radio-frequency magnetron sputtering. In this work, we investigated the effect of the sequence of metal layers on the chemical, structural, and morphological properties of the final CZTS films using X-ray fluorescence (XRF), X-ray diffraction (XRD), Raman scattering spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy. The realized stack sequences were Mo/Sn/Zn/Cu, Mo/Sn/Cu/Zn, Mo/Cu/Zn/Sn, Mo/Cu/Sn/Zn, and Mo/Zn/Cu/Sn. XRF measurements revealed notable impact of the metal layers' stacking order in the precursor on the chemical composition. It also showed Sn loss and high Zn concentration in all sulfurized films; however, having Cu on the Sn or Zn/Sn layer showed some minimization of the Sn loss. XRD showed CZTS films with good crystallinity and no evidence of the presence of secondary phases. Changing the precursor stack order did not show any influence on the films' crystallinity or texture. Raman spectroscopy, in contrast, indicated the presence of ZnS phase beside the main CZTS phase. The morphology study showed significant effect on the structure of the final CZTS films depending on the used stack order. Generally, the films that originated from precursors having a Zn layer deposited directly on Mo or as the second layer exhibited better adhesion to the Mo layer and showed fewer or even no voids compared to the other films.

  4. Tunable three-dimensional helically stacked plasmonic layers on nanosphere monolayers.

    PubMed

    He, Yizhuo; Larsen, George K; Ingram, Whitney; Zhao, Yiping

    2014-01-01

    We report a simple and scalable method to fabricate helical chiral plasmonic nanostructures using glancing angle deposition on self-assembled nanosphere monolayers. By controlling the azimuthal rotation of substrates, Ag and SiO2 layers can be helically stacked in left-handed and right-handed fashions to form continuous helices. Finite-difference time-domain simulations confirm the experimental results that show that these plasmonic helices exhibit strong chiroptical responses in the visible to near-IR region, which can be tuned by changing the diameter of nanospheres. With such flexibility in the design, helically stacked plasmonic layers may act as tunable chiral metamaterials, as well as serve as different building blocks for chiral assemblies. PMID:24646023

  5. Microscopic theoretical model study of band gap opening in AA-stacked bi-layer graphene

    NASA Astrophysics Data System (ADS)

    Sahu, Sivabrata; Parashar, S. K. S.; Rout, G. C.

    2016-05-01

    We address here a tight-binding theoretical model calculation for AA-stacked bi-layer graphene taking into account of a biased potential between two layers to study the density of states and the band dispersion within the total Brillouin zone. We have calculated the electronic Green's function for electron operator corresponding to A and B sub lattices by Zubarev's Green's function technique from which the electronic density of states and the electron band energy dispersion are calculated. The numerically computed density of states and band energy dispersions are investigated by tuning the biased potential to exhibit the band gap by varying the different physical parameters.

  6. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    NASA Astrophysics Data System (ADS)

    Al-Amri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He-Hau, Jr.

    2016-06-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  7. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    PubMed Central

    Al-Amri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%. PMID:27339612

  8. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres.

    PubMed

    Al-Amri, Amal M; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%. PMID:27339612

  9. Fabrication of three-dimensional microfluidic systems by stacking molded polydimethylsiloxane (PDMS) layers

    NASA Astrophysics Data System (ADS)

    Jo, Byung-Ho; Beebe, David J.

    1999-08-01

    A new technique to fabricate 3D microchannels using polydimethylsiloxane (PDMS) elastomer material is presented. The process allows for the stacking of many thin (about 100 micrometers thick) patterned PDMS layers to realize complex 3D channel paths. Replica molding method is utilized to generate each layer. The master for each layer is formed on a silicon wafer using SU-8 positive relief photoresist. PDMS is cast against the master producing molded layers containing channels and openings. To realize thin layers with openings, a sandwich molding configuration was developed that allows precise control of the PDMS thickness. The master wafer is clamped within a sandwich that includes flat aluminum plates, a flexible polyester film layer, a rigid Pyrex wafer and a rubber sheet. A parametric study is performed on PDMS surface activation in a reactive ion etching (RIE) system and the subsequent methanol treatment for bonding and aligning very thin individual components to a substrate. Low RF power and short treatment times are better than high RF power and long treatment times respectively for instant bonding. Layer to layer alignment of less than 15 micrometers is achieved with manual alignment techniques that utilize surface tension driven self alignment methods. A coring procedure is used to realize off chip fluidic connections via the bottom PDMS layer, allowing the top layer to remain smooth and flat for complete optical access. After fabricating 3D channel paths, the hydrophobic surfaces of the inside channel walls can be activated (hydrophobic to hydrophilic) an oxygen plasma RIE system.

  10. Size-dependent melting of single and stacked silver alkanethiolate layers: experiment and phenomenological model

    NASA Astrophysics Data System (ADS)

    Ye, Zichao; de La Rama, Lito; Hu, Liang; Efremov, Mikhail; Allen, Leslie

    2015-03-01

    We report a systematic study of melting of silver alkanethiolate (AgSCn) lamellar crystals. A new synthesis method enables us to control their thickness by either modulating alkanethiol chain length (n = 7-18) or stacking them to a specific layer number (m = 1-10). Nanocalorimetry shows stepwise increase in the melting point, Tm, of single layer AgSCn as an increment of chain length. Layer stacking also results in a size-dependent melting. An odd/even alternation is observed in the Tm of 2, 3, and 4-layer lamellae, but absent in that of single and multilayer samples. We develop a phenomenological model for lamellae melting based on the cumulative excess free energy contributions of four spatially separate regions in AgSCn crystal: free surface, Ag -S central plane, substrate interface, and interlayer interface. Surface excess free energy is revealed to be independent of chain length. The selective appearance of the odd/even effect is due to the significant stabilization of interlayer interfaces of odd-chain samples, possibly due to registration/packing. Such interface stabilization occurs most significantly for 2-layer samples. XRD results support the model as the measured van der Waals gap is smaller for crystals with odd chains. Supported by NSF-DMR-1409953 and NSF-DMR-1006385.

  11. A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Ritter, Dan; Eizenberg, Moshe

    2016-02-01

    Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

  12. A general modal approach for the development of optimal multi-layer stacked vibration energy harvesters

    NASA Astrophysics Data System (ADS)

    Xiong, Xingyu; Oyadiji, S. Olutunde

    2014-10-01

    Piezoelectric vibration energy harvesters with multi-layer stacked structures have been developed. They consist of multi-layer beams, of zigzag configurations, with rigid masses attached between the beams. The rigid masses, which also serve as spacers, are attached to each layer to tune the frequencies of the harvester. Close resonance frequencies and considerable power output can be achieved in multiple modes by varying the positions of the masses. A modal approach is introduced to determine the modal performance conveniently using the mass ratio and the modal electromechanical coupling coefficient, and the required modal parameters are derived using the finite element method. Mass ratio represents the influence of modal mechanical behaviour on the power density. Since the modes with larger mass ratios cause the remaining modes to have smaller mass ratios and lower power densities, a screening process using the modal approach is developed to determine the optimal or near-optimal performance of the harvesters when altering mass positions. This procedure obviates the need for full analysis by pre-selecting the harvester configurations with close resonances and favourable values of mass ratio initially. Furthermore, the multi-layer stacked designs using the modal approach can be used to develop harvesters with different sizes with the power ranging from microwatts to milliwatts.

  13. CHARACTERIZATION OF POLED SINGLE-LAYER PZT FOR PIEZO STACK IN FUEL INJECTION SYSTEM

    SciTech Connect

    Wang, Hong; Matsunaga, Tadashi; Lin, Hua-Tay

    2010-01-01

    Poled single-layer PZT has been characterized in as-extracted and as-received states. PZT plate specimens in the former were extracted from a stack. Flexure strength of PZT was evaluated by using ball-on-ring and 4-point bend tests. Fractography showed that intergranular fractures dominated the fracture surface and that volume pores were the primary strength-limiting flaws. The electric field effect was investigated by testing the PZT in open circuit and coercive field levels. An asymmetrical response on the biaxial flexure strength with respect to the electric field direction was observed. These experimental results will assist reliability design of the piezo stack that is being considered in fuel injection system.

  14. Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

    SciTech Connect

    Yamashita, Y.; Yoshikawa, H.; Kobayashi, K.; Chikyo, T.

    2014-01-28

    Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

  15. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.

    2015-12-01

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  16. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    SciTech Connect

    Gevorgyan, A. H.

    2015-12-15

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  17. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    PubMed

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-01-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials. PMID:27147503

  18. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

    PubMed Central

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H.; Khondaker, Saiful I.; Choi, Wonbong; Jung, Yeonwoong

    2016-01-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials. PMID:27147503

  19. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

    NASA Astrophysics Data System (ADS)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H.; Khondaker, Saiful I.; Choi, Wonbong; Jung, Yeonwoong

    2016-05-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  20. Simple solution route to uniform MoS{sub 2} particles with randomly stacked layers

    SciTech Connect

    Li Qing; Li Ming; Chen Zhiqian; Li Chunmei

    2004-06-08

    MoS{sub 2} particles of uniform size (ca. 70 nm) consisting of random and loosely stacked layers have been synthesized from hydrazine solution with (NH{sub 4}){sub 2}Mo{sub 3}S{sub 13} as the precursor at 180 deg. C for 16 h under hydrothermal conditions. The particles were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HREM). The influences of reaction conditions are discussed while a mechanism is proposed to explain the formation of this peculiar morphology.

  1. Progress in MOSFET double-layer metalization

    NASA Technical Reports Server (NTRS)

    Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

    1980-01-01

    Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

  2. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    NASA Astrophysics Data System (ADS)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  3. Limitations of H-κ stacking: ambiguous results caused by crustal layering

    NASA Astrophysics Data System (ADS)

    Wölbern, I.; Rümpker, G.

    2016-07-01

    Over the past decade, the H-κ stacking technique of Zhu and Kanamori (J Geophys Res 105:2969-2980, 2000) has become a standard tool to determine the crustal thickness H and the bulk crustal vP/vS ratio κ from teleseismic receiver functions. It is obvious that unfavorable noise conditions as well as a complex 3D velocity structure can severely hamper the interpretation of receiver-function data. However, we observe that ambiguities can even arise from a simple 1D layered velocity structure which raises a high potential for misinterpretations. To analyze the feasibility and basic limitations of the H-κ stacking method, we conduct a series of tests based on synthetic data. The impact of different given elementary parameters, related either to the velocity structure or to the data processing, is evaluated in a series of eight individual tests. We deliberately exclude complications such as 3D structural variations and/or noise to show that even a simple 1D velocity structure, involving, e.g., an additional inter-crustal discontinuity, can have significant consequences for the interpretation of the results. However, our modeling suggests that more complex crustal structures may lead to even less reliable results. Additionally, our tests illustrate that time shifts of the maxima in the H-κ domain due to the superposition and merging of individual phases can lead to significantly overestimated vP/vS ratios. In general, the depth to the Moho (or other discontinuities of interest) is less significantly affected. Our tests indicate the necessity to accurately check delay times derived from the maxima of the H-κ stacks against corresponding phases in the receiver functions. Repeating the stacking with varied weighting factors and filter ranges can help to reduce the ambiguities and to avoid possible misinterpretation.

  4. Structural Analysis and Direct Imaging of Rotational Stacking Faults in Few-Layer Graphene Synthesized from Solid Botanical Precursor

    NASA Astrophysics Data System (ADS)

    Kalita, Golap; Wakita, Koichi; Umeno, Masayoshi

    2011-07-01

    Here, we report the structural analysis and rotational stacking faults of few-layer graphene sheets derived by the controlled pyrolysis of the solid botanical derivative camphor (C10H16O). The second-order Raman spectra of the sheets show that the graphene layers are more than one single layer, and the numbers of layers can be controlled by adjusting the amount of camphor pyrolyzed. Transmission electron microscopy images show a minimum of 3 layers for thinner graphene sheets and a maximum of 12 layers for thicker graphene sheets. Low-voltage aberration-corrected high-resolution transmission electron microscopy is also carried out to gain insight into the hexagonal structure and stacking of graphene layers. The transmission electron microscopy study showed the presence of moiré patterns with a relative rotation between graphene layers.

  5. Establishing a Calibration for a Microwave Plasma Continuous Emissions Monitor For Stack Exhaust Metals

    NASA Astrophysics Data System (ADS)

    Flores, G. J., III; Green, K. M.; Woskov, P. P.; Hadidi, K.; Thomas, P.

    1998-11-01

    A real-time continuous emissions monitor for hazardous metals in stack exhaust is in development to replace the regulatory standard, EPA Method 29. A microwave plasma is sustained in ambient stack exhaust flow for real-time atomic emission spectroscopy. A metals injection calibration subsystem using a pneumatic nebulizer and standard metals solution is attached to the exhaust flow for real-time span calibration of the monitored metals. A novel approach to determine the nebulizer injection efficiency during plasma operation was tested. A known metal mass on a tungsten filament attached to an alumina rod was introduced into a nitrogen plasma at different axial positions. These signals were then correlated to masses of metals aspirated into the plasma by the nebulizer. The metals injection efficiency as a function of rod insertion position was calculated by dividing the correlated mass by the total mass aspirated by the nebulizer, and extrapolated to the end of the sample line. The resulting efficiency was compared to samples collected directly by Gelman Science Type A/E glass fiber filters off line from the plasma. The results to date give the nebulizer metals injection efficiencies less than one percent.

  6. Supramolecular self-assembly of graphene oxide and metal nanoparticles into stacked multilayers by means of a multitasking protein ring

    NASA Astrophysics Data System (ADS)

    Ardini, Matteo; Golia, Giordana; Passaretti, Paolo; Cimini, Annamaria; Pitari, Giuseppina; Giansanti, Francesco; Leandro, Luana Di; Ottaviano, Luca; Perrozzi, Francesco; Santucci, Sandro; Morandi, Vittorio; Ortolani, Luca; Christian, Meganne; Treossi, Emanuele; Palermo, Vincenzo; Angelucci, Francesco; Ippoliti, Rodolfo

    2016-03-01

    Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its lumen. This feature is exploited to both capture presynthesized gold nanoparticles and grow in situ palladium nanoparticles paving the way to straightforward and ``green'' routes to 3D reduced GO-metal composite materials.Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its

  7. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

    NASA Astrophysics Data System (ADS)

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Ying Quek, Su

    2015-10-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

  8. Double-Layer ULVZ Shear Velocity Structure Imaged With Stacked ScS Data

    NASA Astrophysics Data System (ADS)

    Avants, M.; Lay, T.; Garnero, E.

    2005-12-01

    The ultra-low velocity zone (ULVZ) has been imaged as a thin (5-40 km thick) layer just above the core-mantle boundary (CMB), with P and S velocities reduced by up to 10 and 30%, respectively. Accurate characterization of the ULVZ is important, as it may relate to, for example, the role of the lowermost mantle in Earth's evolution, mantle and outer core convection, the geodynamo, and heat flux into the mantle. A direct measurement of S velocity in the ULVZ, independent of the P-wave velocity, is needed to better constrain ULVZ properties. We establish tangential component ScS data as a new probe of ULVZ shear velocity properties. Lowermost mantle structure beneath the central Pacific is studied using data from 38 deep focus Tonga-Fiji earthquakes, recorded by dense broadband seismic networks in western North America. Our data set consists of 442 instrument-deconvolved displacement seismograms, which are additionally deconvolved by average source-time functions (source wavelets) constructed for each event, in order to equalize the signals and to extend the signal bandwidth to high frequencies. The resulting traces are used in a double-beam stacking approach to enhance the signal-to-noise ratio of any coherent precursory reflections of the wide-angle transverse component ScS data, which should be detectable if ULVZ structure is present beneath our central Pacific study region. Our stacks reveal two distinct ScS precursors, which indicate a double layer ULVZ structure in this region. Both layers show strong lateral variations in shear velocity reduction (dVs) and thickness. The deeper ULVZ layer is well modeled by dVs drops varying from 3.3-7.4% (relative to PREM) with a thickness range of 24-30 km. The overlying layer has dVs reductions from 0.8-2.0% (relative to PREM), and 60-86 km thickness. Thus the imaged 2-layered ULVZ has dVs reductions far milder than previous studies (10-30%), which have argued for a partial melt origin to the ULVZ. Finer subdivisions of data

  9. Graphitic Tribological Layers in Metal-on-Metal Hip Replacements

    NASA Astrophysics Data System (ADS)

    Liao, Y.; Pourzal, R.; Wimmer, M. A.; Jacobs, J. J.; Fischer, A.; Marks, L. D.

    2011-12-01

    Arthritis is a leading cause of disability, and when nonoperative methods have failed, a prosthetic implant is a cost-effective and clinically successful treatment. Metal-on-metal replacements are an attractive implant technology, a lower-wear alternative to metal-on-polyethylene devices. Relatively little is known about how sliding occurs in these implants, except that proteins play a critical role and that there is a tribological layer on the metal surface. We report evidence for graphitic material in the tribological layer in metal-on-metal hip replacements retrieved from patients. As graphite is a solid lubricant, its presence helps to explain why these components exhibit low wear and suggests methods of improving their performance; simultaneously, this raises the issue of the physiological effects of graphitic wear debris.

  10. Localization-length calculations in alternating metamaterial-birefringent disordered layered stacks

    NASA Astrophysics Data System (ADS)

    del Barco, O.; Gasparian, V.; Gevorkian, Zh.

    2015-06-01

    A detailed theoretical and numerical analysis of the localization length in alternating metamaterial-birefringent random layered stacks, under uncorrelated thickness disorder, has been performed. Similar structures have recently been reported to suppress the Brewster delocalization for p -polarized light when "standard" isotropic layers (with a positive index of refraction) are considered instead of metamaterial layers, providing a generic means to produce polarization-insensitive, broadband reflections. However, this enhancement of localization is valid for short wavelengths λ compared to the mean layer thickness a0. At higher wavelengths, we recover the Brewster anomalies for p -polarized states impeding a remarkable localization of light. To achieve a better localization for a wider range of wavelengths, we replaced the conventional isotropic layers by negative-index metamaterials presenting low losses and constant index of refraction over the near-infrared range. As a result, our numerical calculations exhibit a linear dependence of the localization length on λ (in the region 5 <λ /a0<60 ), reducing the Brewster anomalies by more than two orders of magnitude with respect to the standard isotropic scheme at oblique incidence. This enhancement of localization is practically independent of the thickness disorder kind and is also held under weak refractive-index disorder.

  11. Molecular dynamics simulations on deformation and fracture of bi-layer graphene with different stacking pattern under tension

    NASA Astrophysics Data System (ADS)

    Jiao, M. D.; Wang, L.; Wang, C. Y.; Zhang, Q.; Ye, S. Y.; Wang, F. Y.

    2016-02-01

    Based on AIREBO (Adaptive Intermolecular Reactive Empirical Bond Order) potential, molecular dynamics simulations (MDs) are performed to study the mechanical behavior of AB- and AA-stacked bi-layer graphene films (BGFs) under tension. Stress-strain relationship is established and deformation mechanism is investigated via morphology analysis. It is found that AA-stacked BGFs show wavy folds, i.e. the structural instability, and the local structure of AB-stacked BGFs transforms into AA-stacked ones during free relaxation. The values of the Young's modulus obtained for AA-stacked zigzag and armchair BGFs are 797.2 GPa and 727.4 GPa, and those of their AB-stacked counterparts are 646.7 GPa and 603.5 GPa, respectively. In comparison with single-layer graphene, low anisotropy is observed for BGFs, especially AB-stacked ones. During the tensile deformation, hexagonal cells at the edge of BGFs are found to transform into pentagonal rings and the number of such defects increases with the rise of tensile strain.

  12. All-solution-processed inverted organic solar cell with a stacked hole-transporting layer

    NASA Astrophysics Data System (ADS)

    Lin, Wen-Kai; Su, Shui-Hsiang; Liu, Che-Chun; Yokoyama, Meiso

    2014-11-01

    In this study, inverted organic solar cells (IOSCs) have been fabricated and characterized. A sol-gel zinc oxide (ZnO) film is used as a hole-blocking layer (HBL). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and copper phthalocyanine (CuPc) are used as a hole-transporting layer (HTL). The HBL, active layer, and HTL films are fabricated by spin-coating technique. The anode is fabricated from Ag nanoparticles by drop titration using a Pasteur burette. Experimental results show that the PEDOT:PSS/CuPc stacked HTL provides a stepwise hole-transporting energy diagram configuration, which subsequently increases the charge carrier transporting capability and extracts holes from the active layer to the anode. The characteristics of the IOSCs were optimized and exhibited an open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of 0.53 V, 6.13 mA/cm2, 37.53%, and 1.24%, respectively, under simulated AM1.5G illumination of 100 mW/cm2. Hence, a solution process is feasible for fabricating low-cost and large-area solar energy devices.

  13. Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Shiye; Liu, Weili; Wan, Qing; Dai, J. Y.; Lee, P. F.; Suhua, Luo; Shen, Qinwo; Zhang, Miao; Song, Zhitang; Lin, Chenglu

    2005-03-01

    A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2/SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I -V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2 was achieved.

  14. Basic criteria for formation of growth twins in high stacking fault energy metals

    SciTech Connect

    Yu, K. Y.; Zhang, X.; Bufford, D.; Chen, Y.; Liu, Y.; Wang, H.

    2013-10-28

    Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

  15. Quantum theory for the nanoscale propagation of light through stacked thin film layers

    NASA Astrophysics Data System (ADS)

    Forbes, Kayn A.; Williams, Mathew D.; Andrews, David L.

    2016-04-01

    Stacked multi-layer films have a range of well-known applications as optical elements. The various types of theory commonly used to describe optical propagation through such structures rarely take account of the quantum nature of light, though phenomena such as Anderson localization can be proven to occur under suitable conditions. In recent and ongoing work based on quantum electrodynamics, it has been shown possible to rigorously reformulate, in photonic terms, the fundamental mechanisms that are involved in reflection and optical transmission through stacked nanolayers. Accounting for sum-over-pathway features in the quantum mechanical description, this theory treats the sequential interactions of photons with material boundaries in terms of individual scattering events. The study entertains an arbitrary number of reflections in systems comprising two or three internally reflective surfaces. Analytical results are secured, without recourse to FTDT (finite-difference time-domain) software or any other finite-element approximations. Quantum interference effects can be readily identified. The new results, which cast the optical characteristics of such structures in terms of simple, constituent-determined properties, are illustrated by model calculations.

  16. Blocking force of a piezoelectric stack actuator made of single crystal layers (PMN-29PT)

    NASA Astrophysics Data System (ADS)

    Tran, K. S.; Phan, H. V.; Lee, H. Y.; Kim, Yongdae; Park, H. C.

    2016-09-01

    In this study, we fabricated and characterized a stack actuator made of forty layers of 1 mm thick PMN-29PT with a cross-sectional area of 10 × 10 mm2. From the measurement of actuation displacement, we confirmed that the piezoelectric strain constant in the direction of thickness of the material is 2000 pm V‑1, as suggested by the manufacturer. The blocking forces of the actuator are measured to be 230 N, 369 N, and 478 N for 100 V, 200 V, and 300 V, respectively. The measured blocking forces showed large discrepancies from the estimated blocking forces calculated using linear models, especially for a high voltage application. An empirical equation acquired by fitting the measured blocking forces indicates that the blocking force has a nonlinear relationship with the applied voltage. The measured hysteresis showed a slight nonlinear voltage-stroke relationship and small energy loss.

  17. Optical transmission through double-layer, laterally shifted metallic subwavelength hole arrays

    SciTech Connect

    Marset, zsolt; Hang, z. h.; Chan, C. T.; Kravchenko, Ivan I; Bower, J. E.

    2010-01-01

    We measure the transmission of infra-red radiation through double-layer metal lms with periodic arrays of subwavelength holes. When the two metal lms are placed in su ciently close proximity, two types of transmission resonances emerge. For the surface plasmon mode, the electromagnetic eld is concentrated on the outer surface of the entire metallic layer stack. In contrast, for the guided mode the eld is con ned to the gap between the two metal layers. Our measurements indicate that as the two layers are laterally shifted from perfect alignment, the peak transmission frequency of the guided mode decreases signi cantly, while that of the surface plasmon mode remains largely unchanged, in agreement with numerical calculations.

  18. Clinical characterization of a proton beam continuous uniform scanning system with dose layer stacking

    PubMed Central

    Farr, J. B.; Mascia, A. E.; Hsi, W.-C.; Allgower, C. E.; Jesseph, F.; Schreuder, A. N.; Wolanski, M.; Nichiporov, D. F.; Anferov, V.

    2008-01-01

    A proton beam delivery system on a gantry with continuous uniform scanning and dose layer stacking at the Midwest Proton Radiotherapy Institute has been commissioned and accepted for clinical use. This paper was motivated by a lack of guidance on the testing and characterization for clinical uniform scanning systems. As such, it describes how these tasks were performed with a uniform scanning beam delivery system. This paper reports the methods used and important dosimetric characteristics of radiation fields produced by the system. The commissioning data include the transverse and longitudinal dose distributions, penumbra, and absolute dose values. Using a 208 MeV cyclotron’s proton beam, the system provides field sizes up to 20 and 30 cm in diameter for proton ranges in water up to 27 and 20 cm, respectively. The dose layer stacking method allows for the flexible construction of spread-out Bragg peaks with uniform modulation of up to 15 cm in water, at typical dose rates of 1–3 Gy∕min. For measuring relative dose distributions, multielement ion chamber arrays, small-volume ion chambers, and radiographic films were employed. Measurements during the clinical commissioning of the system have shown that the lateral and longitudinal dose uniformity of 2.5% or better can be achieved for all clinically important field sizes and ranges. The measured transverse penumbra widths offer a slight improvement in comparison to those achieved with a double scattering beam spreading technique at the facility. Absolute dose measurements were done using calibrated ion chambers, thermoluminescent and alanine detectors. Dose intercomparisons conducted using various types of detectors traceable to a national standards laboratory indicate that the measured dosimetry data agree with each other within 5%. PMID:19070228

  19. GO-induced assembly of gelatin toward stacked layer-like porous carbon for advanced supercapacitors.

    PubMed

    Zhang, Xiaomeng; Jiao, Yanqing; Sun, Li; Wang, Lei; Wu, Aiping; Yan, Haijing; Meng, Meichen; Tian, Chungui; Jiang, Baojiang; Fu, Honggang

    2016-01-28

    Layer-like nanocarbons with high surface area and good conductivity are promising materials for supercapacitors due to their good ability for effective charge-transfer and mass-transfer. In this paper, stacked layer-like porous carbon containing RGO (reduced graphene oxides) (LPCG) was constructed via the GO-induced assembly of gelatin followed by carbonization and activation processes. Under suitable conditions, LPCG-based materials with a thickness of about 100 nm and a high specific surface area (up to 1476 m(2) g(-1)) could be obtained. In the materials, the closed combination of RGO and porous carbon can be observed, which is favourable for the development of the synergistic effects of both components. The presence of GO can not only enhance the conductivity of LPCG-based materials, but also is essential for the formation of a thin carbon sheet with a stacked structure. Otherwise, the plate-like, non-stacked carbon with a thickness of about 500 nm could be formed in the absence of RGO. The porous structure along with the presence of RGO allows rapid charge-transfer and easy access and diffusion of electrolyte ions. As a result, the materials exhibited a high discharge specific capacitance (455 F g(-1) at 0.5 A g(-1), 366 F g(-1) at 1 A g(-1)), good rate capability (221 F g(-1) at density 30 A g(-1)) and good cycling stability. In aqueous electrolytes, the energy density could be up to 9.32 W h kg(-1) at a relatively low power density of 500 W kg(-1) with a good cycling stability (>96% over 5000 cycles). It was found that (1) the rational combination of RGO and porous carbon is essential for enhancing the capacitance performance and improving the cycling stability and (2) the high conductivity is favorable for improving the rate performance of the materials. The LPCG-based materials have extensive potential for practical applications in energy storage and conversion devices. PMID:26755198

  20. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  1. Interaction of metal layers with polycrystalline Si

    NASA Technical Reports Server (NTRS)

    Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

    1976-01-01

    Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

  2. Conceptual design of stacked-layer detectors to increase the sensitivity of Fast Neutron Gamma-ray Radiography (FNGR)

    NASA Astrophysics Data System (ADS)

    Cho, Jea Hyung; Kim, Kwang Hyun; Chung, Young Hyun

    2012-04-01

    This study is focused on the structure and other possible factors related to scintillators used in the Fast Neutron and Gamma-ray Radiography (FNGR) system to increase its sensitivity. The CsI(Tl) crystal scintillator (Co-60 gamma-ray detection) and the BC430 plastic scintillator (14 MeV fast neutron detection) were analyzed with the Monte Carlo simulation (MCNPX and DETEC97 codes). Each scintillator was investigated with regard to the optimum thickness (1 cm × 1 cm), reconfiguration of detector modules (a stacked-layer structure), the optimum surface treatment, and the spectral matching with customized PIN-type photodiodes. As a result, the optimum thickness of the CsI(Tl) was found to be 4.5 cm; the optimum value was 5.5 cm for the BC430. When the detector modules were stacked in a sandwich structure rather than the existing single detector structure, the light photon transmission to the surface of the photodiode was enhanced by 40% and 58% for CsI(Tl) and BC430, respectively. In the matter of scintillator surface treatment, both scintillators were simulated with unpolished and polished condition before coating. The polished condition of the scintillator surfaces showed a higher performance, more than doubling that of the unpolished condition surfaces. Then, the performance improvement of the scintillator with the paint coating was compared to the scintillator with the metal coating conditions. For CsI(Tl), the metal coating showed a 10 % higher performance than that of the paint coating, and the metal coating of BC430 showed a 6% higher performance than that of the paint coating. As a result of spectral matching between the scintillators and the customized PIN-photodiodes, PS100-6b of Silicon AG, SD445-14-21-305 of API, and FSD1010-CAL of THOLABS were compared. The spectral matching factor of PS100-6b was 0.39 with CsI(Tl) and was 0.42 with BC430; the spectral matching factors of the other samples were relatively lower (SD445-14-21-305 with CsI(Tl): 0.29; SD445

  3. Vertically Stacked Graphene/Transition-Metal-Dichalcogenides/Graphene Heterojunction Devices for High Performance Photodetectors

    NASA Astrophysics Data System (ADS)

    Heo, Jinseong; Jeong, Heejeong; Lee, Jaeho; Lee, Kiyoung; Lee, Eun-Kyu; Lee, Sangyeob; Cho, Yeonchoo; Byun, Kyung-Eun; Lee, Chang-Won; Park, Seongjun; Hwang, Sungwoo

    Photodetectors based on vertically stacked graphene heterojunctions have advantages of short transit length for photo-generated carriers and large sensing area, thus implying fast response time and high responsivity. Previously, vertically stacked Graphene (Gr)/Transition-Metal-Dichalcogenide (TMDC)/Gr junctions were introduced for optoelectronic devices, showing high current on and off ratio as well as photoresponsivity. But for high performance photodetectors, both thorough and comparative study in terms of the figures of merit such as photoresponse time and photoresponsivity depending on different TMDC materials is crucial. Here, we report fast response time (28 us) and high responsivity (20 A/W) from Gr/WSe2 and MoS2/Gr, respectively. At the same time, those devices operate as p- and n-type barrier-variable transistors, respectively, being a potential building block for optoelectronic system on a chip.

  4. GO-induced assembly of gelatin toward stacked layer-like porous carbon for advanced supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaomeng; Jiao, Yanqing; Sun, Li; Wang, Lei; Wu, Aiping; Yan, Haijing; Meng, Meichen; Tian, Chungui; Jiang, Baojiang; Fu, Honggang

    2016-01-01

    Layer-like nanocarbons with high surface area and good conductivity are promising materials for supercapacitors due to their good ability for effective charge-transfer and mass-transfer. In this paper, stacked layer-like porous carbon containing RGO (reduced graphene oxides) (LPCG) was constructed via the GO-induced assembly of gelatin followed by carbonization and activation processes. Under suitable conditions, LPCG-based materials with a thickness of about 100 nm and a high specific surface area (up to 1476 m2 g-1) could be obtained. In the materials, the closed combination of RGO and porous carbon can be observed, which is favourable for the development of the synergistic effects of both components. The presence of GO can not only enhance the conductivity of LPCG-based materials, but also is essential for the formation of a thin carbon sheet with a stacked structure. Otherwise, the plate-like, non-stacked carbon with a thickness of about 500 nm could be formed in the absence of RGO. The porous structure along with the presence of RGO allows rapid charge-transfer and easy access and diffusion of electrolyte ions. As a result, the materials exhibited a high discharge specific capacitance (455 F g-1 at 0.5 A g-1, 366 F g-1 at 1 A g-1), good rate capability (221 F g-1 at density 30 A g-1) and good cycling stability. In aqueous electrolytes, the energy density could be up to 9.32 W h kg-1 at a relatively low power density of 500 W kg-1 with a good cycling stability (>96% over 5000 cycles). It was found that (1) the rational combination of RGO and porous carbon is essential for enhancing the capacitance performance and improving the cycling stability and (2) the high conductivity is favorable for improving the rate performance of the materials. The LPCG-based materials have extensive potential for practical applications in energy storage and conversion devices.Layer-like nanocarbons with high surface area and good conductivity are promising materials for

  5. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

    PubMed Central

    Khan, Z. N.; Ahmed, S.; Ali, M.

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  6. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    PubMed

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  7. Investigation of Clad Metals for Use as Bipolar Plate Material in PEM Fuel Cell Stacks

    SciTech Connect

    Rich, John S.; Meier, Alan M.; Kim, Jin Yong; Xia, Guanguang; Yang, Zhenguo; Weil, K. Scott

    2006-07-21

    Although metal interconnects offer many advantages over their carbon-based counterparts, they suffer from surface corrosion which leads to a release of metal ions that can contaminate the electrolyte membrane and poison the electrode catalysts. In addition, the formation of a passivating oxide or oxyhydroxide layer on the surface of the metal will increase the contact resistance between the bipolar plate and the graphite electrode backing. The approach currently under development employs an inexpensive clad metal laminate as the primary material for the bipolar plate. The key in making this work is in identifying an appropriate surface passivation layer that mitigates corrosion while at the same time allows for good electronic conduction. The current study investigated the kinetics of nitride formation on Nb and Ti foils as a function of time, temperature, atmosphere (N2-H2 gas composition), and the corrosion behavior. These two metals are being considered for use as a thin external cladding layer over an inexpensive steel core layer. As the nitride layer formation temperature was increased, the surface morphologies for both niobium and titanium substrates became coarser and more pitted, the nitride thicknesses of both increased non-linearly, and in the titanium system an oxide layer product layer on the outer surface grew as well. As the isothermal hold time was increased, the surface morphologies of both niobium and titanium reaction product layers did not change noticeably, and the thicknesses of the nitride layers increased. As the amount of hydrogen in the atmosphere was increased the surface morphologies for both the niobium and titanium did not change detectably, the thicknesses of the nitride layers increased, and titanium thicknesses of the oxide layers decreased. The nitrided niobium exhibited much better corrosion behavior than the nitrided titanium but no improvement was obtained relative to the pure Nb corrosion rates.

  8. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers

    PubMed Central

    Bogdanov, Nikolay A.; Katukuri, Vamshi M.; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-01-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics. PMID:26105992

  9. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers.

    PubMed

    Bogdanov, Nikolay A; Katukuri, Vamshi M; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-01-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics. PMID:26105992

  10. Wafer-scale double-layer stacked Au/Al2O3@Au nanosphere structure with tunable nanospacing for surface-enhanced Raman scattering.

    PubMed

    Hu, Zhaosheng; Liu, Zhe; Li, Lin; Quan, Baogang; Li, Yunlong; Li, Junjie; Gu, Changzhi

    2014-10-15

    Fabricating perfect plasmonic nanostructures has been a major challenge in surface enhanced Raman scattering (SERS) research. Here, a double-layer stacked Au/Al2O3@Au nanosphere structures is designed on the silicon wafer to bring high density, high intensity "hot spots" effect. A simply reproducible high-throughput approach is shown to fabricate feasibly this plasmonic nanostructures by rapid thermal annealing (RTA) and atomic layer deposition process (ALD). The double-layer stacked Au nanospheres construct a three-dimensional plasmonic nanostructure with tunable nanospacing and high-density nanojunctions between adjacent Au nanospheres by ultrathin Al2O3 isolation layer, producing highly strong plasmonic coupling so that the electromagnetic near-field is greatly enhanced to obtain a highly uniform increase of SERS with an enhancement factor (EF) of over 10(7). Both heterogeneous nanosphere group (Au/Al2O@Ag) and pyramid-shaped arrays structure substrate can help to increase the SERS signals further, with a EF of nearly 10(9). These wafer-scale, high density homo/hetero-metal-nanosphere arrays with tunable nanojunction between adjacent shell-isolated nanospheres have significant implications for ultrasensitive Raman detection, molecular electronics, and nanophotonics. PMID:24995658

  11. A wide-angle broadband polarization-dependent absorber with stacked metal-dielectric grating

    NASA Astrophysics Data System (ADS)

    Liao, Yan-Lin; Zhao, Yan

    2016-07-01

    We report an absorber in the mid-infrared regime by using stacked metal-dielectric grating structure. The simulation results show that the minimal absorption magnitude is larger than 0.8 in the broadband range for angles up to 60° for TM polarization (magnetic field is parallel to grating grooves). At the same time, absorption for TE polarization (electric field is parallel to grating grooves) is negligible. Furthermore, such broadband absorption for TM polarization can be tuned by shrinking or enlarging the grating parameters. This absorber is a good candidate for potential applications such as polarization detectors and polarizers.

  12. Structure change, layer sliding, and metallization in high-pressure MoS2

    NASA Astrophysics Data System (ADS)

    Tosatti, Erio; Hromadova, Liliana; Martonak, Roman

    2013-03-01

    Based on ab initio calculations and metadynamics simulations, we predict that 2H-MoS2, a layered insulator, will metallize under pressures in excess of 20-30 GPa. In the same pressure range, simulations and enthalpy optimization predict a structural transition. Reminiscent of this material's frictional properties, free mutual sliding of layers takes place at this transition, where the original 2Hc stacking changes to a 2Ha stacking typical of 2H-NbSe2, a transformation which explains for the first time previously mysterious X-ray diffraction data. Phonon and electron phonon calculations suggest that metallic pristine MoS2 will require ultrahigh pressures in order to develop superconductivity. Supported by EU-Japan Project LEMSUPER, by a SNF Sinergia Project, and by the Slovak Research and Development Agency

  13. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  14. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Das, Gangadhar; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics.

  15. Stacked thin layers of metaphase chromatin explain the geometry of chromosome rearrangements and banding

    PubMed Central

    Daban, Joan-Ramon

    2015-01-01

    The three-dimensional organization of tightly condensed chromatin within metaphase chromosomes has been one of the most challenging problems in structural biology since the discovery of the nucleosome. This study shows that chromosome images obtained from typical banded karyotypes and from different multicolour cytogenetic analyses can be used to gain information about the internal structure of chromosomes. Chromatin bands and the connection surfaces in sister chromatid exchanges and in cancer translocations are planar and orthogonal to the chromosome axis. Chromosome stretching produces band splitting and even the thinnest bands are orthogonal and well defined, indicating that short stretches of DNA can occupy completely the chromosome cross-section. These observations impose strong physical constraints on models that attempt to explain chromatin folding in chromosomes. The thin-plate model, which consists of many stacked layers of planar chromatin perpendicular to the chromosome axis, is compatible with the observed orientation of bands, with the existence of thin bands, and with band splitting; it is also compatible with the orthogonal orientation and planar geometry of the connection surfaces in chromosome rearrangements. The results obtained provide a consistent interpretation of the chromosome structural properties that are used in clinical cytogenetics for the diagnosis of hereditary diseases and cancers. PMID:26446309

  16. Synthesis and characterization of petal type CZTS by stacked layer reactive sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Om Pal; Parmar, R.; Gour, K. S.; Dalai, M. K.; Tawale, Jai; Singh, S. P.; Singh, Vidya Nand

    2015-12-01

    Here we present a method to grow the petal type structure of CZTS thin film on soda lime glass substrate using the stacked layer reactive sputtering and post-depostion annealing in N2 atmosphere. Optical bandgap of the petal type structure of CZTS was determined using UV-VIS spectroscopy and the value was 1.5 eV. In XRD analysis, (112) plane having highest intensity and other supporting planes with low intensity peaks corresponding to (200), (220) and (312) revealed the presence of CZTS phase. It was further confirmed by the Raman analysis, where the Raman peaks at 288 cm-1, 335 cm-1 and 353 cm-1 revealed the presence of CZTS phase. Petal type growth was observed in the scanning electron microscopy analysis. Elemental analysis was done by the EDAX. In EDAX analysis, It is observed that sample was Sn rich which may be responsible for petal type growth. Petal type growth of CZTS may be helpful in increasing the performance of the CZTS based thin film solar cell by phenomena of light scattering and enhanced surface area.

  17. THE MASS-METALLICITY RELATION WITH THE DIRECT METHOD ON STACKED SPECTRA OF SDSS GALAXIES

    SciTech Connect

    Andrews, Brett H.; Martini, Paul

    2013-03-10

    The relation between galaxy stellar mass and gas-phase metallicity is a sensitive diagnostic of the main processes that drive galaxy evolution, namely cosmological gas inflow, metal production in stars, and gas outflow via galactic winds. We employed the direct method to measure the metallicities of {approx}200,000 star-forming galaxies from the Sloan Digital Sky Survey that were stacked in bins of (1) stellar mass and (2) both stellar mass and star formation rate (SFR) to significantly enhance the signal-to-noise ratio of the weak [O III] {lambda}4363 and [O II] {lambda}{lambda}7320, 7330 auroral lines required to apply the direct method. These metallicity measurements span three decades in stellar mass from log(M{sub *}/M{sub Sun }) = 7.4-10.5, which allows the direct method mass-metallicity relation to simultaneously capture the high-mass turnover and extend a full decade lower in mass than previous studies that employed more uncertain strong line methods. The direct method mass-metallicity relation rises steeply at low mass (O/H {proportional_to} M{sub *} {sup 1/2}) until it turns over at log(M{sub *}/M{sub Sun }) = 8.9 and asymptotes to 12 + log(O/H) = 8.8 at high mass. The direct method mass-metallicity relation has a steeper slope, a lower turnover mass, and a factor of two to three greater dependence on SFR than strong line mass-metallicity relations. Furthermore, the SFR-dependence appears monotonic with stellar mass, unlike strong line mass-metallicity relations. We also measure the N/O abundance ratio, an important tracer of star formation history, and find the clear signature of primary and secondary nitrogen enrichment. N/O correlates tightly with oxygen abundance, and even more so with stellar mass.

  18. The Mass-Metallicity Relation with the Direct Method on Stacked Spectra of SDSS Galaxies

    NASA Astrophysics Data System (ADS)

    Andrews, Brett H.; Martini, Paul

    2013-03-01

    The relation between galaxy stellar mass and gas-phase metallicity is a sensitive diagnostic of the main processes that drive galaxy evolution, namely cosmological gas inflow, metal production in stars, and gas outflow via galactic winds. We employed the direct method to measure the metallicities of ~200,000 star-forming galaxies from the Sloan Digital Sky Survey that were stacked in bins of (1) stellar mass and (2) both stellar mass and star formation rate (SFR) to significantly enhance the signal-to-noise ratio of the weak [O III] λ4363 and [O II] λλ7320, 7330 auroral lines required to apply the direct method. These metallicity measurements span three decades in stellar mass from log(M sstarf/M ⊙) = 7.4-10.5, which allows the direct method mass-metallicity relation to simultaneously capture the high-mass turnover and extend a full decade lower in mass than previous studies that employed more uncertain strong line methods. The direct method mass-metallicity relation rises steeply at low mass (O/H vprop M sstarf 1/2) until it turns over at log(M sstarf/M ⊙) = 8.9 and asymptotes to 12 + log(O/H) = 8.8 at high mass. The direct method mass-metallicity relation has a steeper slope, a lower turnover mass, and a factor of two to three greater dependence on SFR than strong line mass-metallicity relations. Furthermore, the SFR-dependence appears monotonic with stellar mass, unlike strong line mass-metallicity relations. We also measure the N/O abundance ratio, an important tracer of star formation history, and find the clear signature of primary and secondary nitrogen enrichment. N/O correlates tightly with oxygen abundance, and even more so with stellar mass.

  19. [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    NASA Astrophysics Data System (ADS)

    Liu, E.; Swerts, J.; Couet, S.; Mertens, S.; Tomczak, Y.; Lin, T.; Spampinato, V.; Franquet, A.; Van Elshocht, S.; Kar, G.; Furnemont, A.; De Boeck, J.

    2016-03-01

    Alternative free layer materials with high perpendicular anisotropy are researched to provide spin-transfer-torque magnetic random access memory stacks' sufficient thermal stability at critical dimensions of 20 nm and below. We demonstrate a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB. The seed material on which the [Co/Ni] multilayer is deposited determines its switching characteristics. When deposited on a Pt seed layer, soft magnetic switching behavior with high squareness is obtained. When deposited on a NiCr seed, the perpendicular anisotropy remains high, but the squareness is low and coercivity exceeds 1000 Oe. Interdiffusion of the seed material with the [Co/Ni] multilayers is found to be responsible for the different switching characteristics. In optimized stacks, a TMR of 165% and low resistance-area (RA) product of 7.0 Ω μm2 are attained for free layers with an effective perpendicular magnetic anisotropy energy of 1.25 erg/cm2, which suggests that the hybrid free layer materials may be a viable candidate for high density magnetic random access memory applications.

  20. Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-07

    A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scaling to 0.5 nm is also demonstrated based on these understandings.

  1. Design of wide-angle solar-selective absorbers using aperiodic metal-dielectric stacks.

    PubMed

    Sergeant, Nicholas P; Pincon, Olivier; Agrawal, Mukul; Peumans, Peter

    2009-12-01

    Spectral control of the emissivity of surfaces is essential in applications such as solar thermal and thermophotovoltaic energy conversion in order to achieve the highest conversion efficiencies possible. We investigated the spectral performance of planar aperiodic metal-dielectric multilayer coatings for these applications. The response of the coatings was optimized for a target operational temperature using needle-optimization based on a transfer matrix approach. Excellent spectral selectivity was achieved over a wide angular range. These aperiodic metal-dielectric stacks have the potential to significantly increase the efficiency of thermophotovoltaic and solar thermal conversion systems. Optimal coatings for concentrated solar thermal conversion were modeled to have a thermal emissivity <7% at 720K while absorbing >94% of the incident light. In addition, optimized coatings for solar thermophotovoltaic applications were modeled to have thermal emissivity <16% at 1750K while absorbing >85% of the concentrated solar radiation. PMID:20052206

  2. Effects of stacking fault energy on defect formation process in face-centered cubic metals

    NASA Astrophysics Data System (ADS)

    Okita, Taira; Yang, Yingjuan; Hirabayashi, Junichi; Itakura, Mitsuhiro; Suzuki, Katsuyuki

    2016-05-01

    To elucidate the effect of stacking fault energies (SFEs) on defect formation by the collision cascade process for face-centred cubic metals, we used six sets of interatomic potentials with different SFEs while keeping the other properties almost identical. Molecular dynamic simulations of the collision cascade were carried out using these potentials with primary knock-on atom energies (EPKA) of 10 and 20 keV at 100 K. Neither the number of residual defects nor the size distributions for both self-interstitial atom (SIA) type and vacancy type clusters were affected by the difference in the SFE. In the case of EPKA = 20 keV, the ratio of glissile SIA clusters increased as the SFE decreased, which was not expected by a prediction based on the classical dislocation theory. The trend did not change after annealing at 1100 K for 100 ps. For vacancy clusters, few stacking fault tetrahedrons (SFTs) formed before the annealing. However, lower SFEs tended to increase the SFT fraction after the annealing, where large vacancy clusters formed at considerable densities. The findings of this study can be used to characterise the defect formation process in low SFE metals such as austenitic stainless steels.

  3. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NASA Astrophysics Data System (ADS)

    Garcia-Alonso, D.; Smit, S.; Bordihn, S.; Kessels, W. M. M.

    2013-08-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max < 4 cm s-1) on n- and p-type Si than single-layer Al2O3 films for a wide range of ZnO thicknesses and irrespective of Al-doping of the ZnO. Stacks with an Al2O3 thickness of 1-2 nm were found to combine reasonable surface passivation (Seff,max = 100-700 cm s-1) with sufficiently high tunneling current densities (10-300 mA cm-2 at 700 mV).

  4. Porus electrode comprising a bonded stack of pieces of corrugated metal foil

    NASA Technical Reports Server (NTRS)

    Mccallum, J. (Inventor)

    1973-01-01

    An electrode suitable for use in an electrochemical cell is described. The electrode is composed of a porous conductive support with a bonded stack of pieces of thin corrugated nickel foil where the corrugations are oriented approximately perpendicular to the sides of the electrode and form an array of passages through the electrode. Active material such as cadmium hydroxide or nickel hydroxide is uniformly distributed within the passages. The support may comprise also a piece of thin flat nickel foil between adjacent pieces of the corrugated foil, forming a barrier between the passages formed on each side of it. Typically the corrugations in the odd corrugated layers are oriented at a small angle from the perpendicular in one direction and the corrugations in the even corrugated layers are oriented at a small angle from the perpendicular in the opposite direction.

  5. Stacking faults on (001) in transition-metal disilicides with the C11{sub b} structure

    SciTech Connect

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-12-31

    Stacking faults on (001) in MoSi{sub 2} and WSi{sub 2} with the C11{sub b} structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi{sub 2} contains a high density of stacking faults, only several faults are observed in MoSi{sub 2}. For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 {+-} 0.10 and 3.34 {+-} 0.10 for MoSi{sub 2} and WSi{sub 2}, respectively.

  6. Laser evaporation of metal sandwich layers for improved IC metallization

    NASA Astrophysics Data System (ADS)

    Pielmeier, R.; Bollmann, D.; Haberger, K.

    1990-12-01

    With the further shrink of IC dimensions, metallization becomes the most crucial layer because conductivity and contact resistivity determine the RC constants and thus the speed of the circuits. With our Q-switched Nd:YAG laser we have evaporated different materials (Al, Ti, W, Pt, Au), alloys (Ta-Si) and dielectrics (ZrO 2, Al 2O 3). We also produced sandwich layers (Al-Au, Ti-Al). The layers were investigated with regard to deposition rate, homogeneity, adhesion, step coverage and surface roughness. Deposition rates in the order of 60 nm/min were achieved. At a power of 10 W and a repetition rate of about 5 kHz we could form ohmic contacts to silicon with a good step coverage in the contact.

  7. New Layered Ternary Transition-Metal Tellurides

    NASA Astrophysics Data System (ADS)

    Mar, Arthur

    Several new ternary transition-metal tellurides, a class of compounds hitherto largely unexplored, have been synthesized and characterized. These are layered materials whose structures have been determined by single -crystal X-ray diffraction methods. The successful preparation of the compound TaPtTe_5 was crucial in developing an understanding of the MM'Te_5 (M = Nb, Ta; M' = Ni, Pd, Pt) series of compounds, which adopt either of two possible closely-related layered structures. Interestingly, the compound TaPdTe _5 remains unknown. Instead, the compound Ta_4Pd_3Te _{16} has been prepared. Its structure is closely related to that of the previously prepared compound Ta_3Pd _3Te_{14}. The physical properties of these compounds have been measured and correlated with the metal substitutions and interlayer separations. A new series of compounds, MM'Te _4 (M = Nb, Ta; M' = Ru, Os, Rh, Ir), has been discovered. The structure of NbIrTe_4 serves as a prototype: it is an ordered variant of the binary telluride WTe_2. Electronic band-structure calculations have been performed in order to rationalize the trends in metal-metal and tellurium -tellurium bonding observed in WTe_2 and the MM'Te_4 phases. Extension of these studies to include main-group metals has resulted in the synthesis of the new layered ternary germanium tellurides TiGeTe_6, ZrGeTe_4 , and HfGeTe_4. Because germanium can behave ambiguously in its role as a metalloid element, it serves as an anion by capping the metal-centered trigonal prisms and also as a cation in being coordinated in turn by other tellurium atoms in a trigonal pyramidal fashion. Structural relationships among these compounds are illustrated through the use of bicapped trigonal prisms and trigonal pyramids as the basic structural building blocks. The electrical and magnetic properties of these compounds have been measured. Insight into the unusual bonding and physical properties of these germanium-containing compounds has been gained through

  8. Construction of a two layer quarter-wave stack consisting of TiO2 and SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Papavasiliou, Kriton; Heflin, J. R.; Ritter, Alfred

    2010-03-01

    There are several methods of depositing quarter-wave stacks including vacuum deposition and spin coating that are expensive and/or unsuitable for large and non-planar surfaces. These difficulties can be ameliorated by using ISAM (Ionic Self-Assembled Monolayers) for depositing the films. A quarter-wave stack has been constructed with a low refractive index layer of SiO2 nanoparticles and a high refractive index layer of TiO2 nanoparticles. The process conditions for the quarter-wave stack have been optimized by a factorial design experiment. The optical properties of the stack will be reported.

  9. Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

    NASA Astrophysics Data System (ADS)

    Tagami, Masayoshi; Inoue, Naoya; Ueki, Makoto; Narihiro, Mitsuru; Tada, Munehiro; Yamamoto, Hironori; Ito, Fuminori; Furutake, Naoya; Saito, Shinobu; Onodera, Takahiro; Takeuchi, Tsuneo; Hayashi, Yoshihiro

    2012-09-01

    Low capacitance and highly reliable Cu dual-damascene (DD) interconnects have been developed with self-organized “seamless low-k SiOCH stacks” (SEALS) structure. A carbon-rich sub-nano porous SiOCH (k=2.5) was directly stacked on an oxygen-rich porous SiOCH (k=2.7) in the SEALS structure, without a hard-mask (HM) and etch-stop (ES) layer of SiO2. The effective k-value (keff) of the Cu DD interconnect including the SiCN capping layer (k=4.9) was reduced to 2.9 compared to 3.4 on a conventional hybrid structure with SiO2-HM and ES, which had been used in 65-nm-node mass production. The interconnect delay of a 45-nm-node complementary metal oxide semiconductor (CMOS) ring oscillator (RO) was reduced by 15% referring to that of the conventional hybrid structure. Interconnect reliabilities, such as the interline time dependent dielectric breakdown (TDDB) and thermal cycles, were unchanged from those of the conventional hybrid interconnects. No failure was detected for chip package interaction (CPI) during reliability tests in a plastic ball grid array (PBGA) package. SEALS is a promising structure for scaled down ultra large scale integrations (ULSIs) for highly reliable and high speed operation, and low power consumption.

  10. Photovoltaic device having light transmitting electrically conductive stacked films

    DOEpatents

    Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

    1990-07-10

    A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

  11. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

    PubMed Central

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

  12. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.

    PubMed

    Yao, Liyong; Ao, Jianping; Jeng, Ming-Jer; Bi, Jinlian; Gao, Shoushuai; He, Qing; Zhou, Zhiqiang; Sun, Guozhong; Sun, Yun; Chang, Liann-Be; Chen, Jian-Wun

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

  13. Tight-binding study of stacking fault energies and the Rice criterion of ductility in the fcc metals

    NASA Astrophysics Data System (ADS)

    Mehl, Michael J.; Papaconstantopoulos, Dimitrios A.; Kioussis, Nicholas; Herbranson, M.

    2000-02-01

    We have used the Naval Research Laboratory (NRL) tight-binding (TB) method to calculate the generalized stacking fault energy and the Rice ductility criterion in the fcc metals Al, Cu, Rh, Pd, Ag, Ir, Pt, Au, and Pb. The method works well for all classes of metals, i.e., simple metals, noble metals, and transition metals. We compared our results with full potential linear-muffin-tin orbital and embedded atom method (EAM) calculations, as well as experiment, and found good agreement. This is impressive, since the NRL-TB approach only fits to first-principles full-potential linearized augmented plane-wave equations of state and band structures for cubic systems. Comparable accuracy with EAM potentials can be achieved only by fitting to the stacking fault energy.

  14. Investigating doping effects on high-κ metal gate stack for effective work function engineering

    NASA Astrophysics Data System (ADS)

    Leroux, C.; Baudot, S.; Charbonnier, M.; Van Der Geest, A.; Caubet, P.; Toffoli, A.; Blaise, Ph.; Ghibaudo, G.; Martin, F.; Reimbold, G.

    2013-10-01

    The impact of additives (La, Al and Mg) at the SiO2/high-κ interface has been investigated through ab initio simulations and electrical measurements. Various gate stacks with additive below or the above high-κ dielectric are compared. Combination of capacitance versus gate bias measurement and internal photon emission is performed to demonstrate that the threshold voltage shift is related to a dipole formation at the SiO2/high-κ interface. The respective roles of aluminum and lanthanum are clearly identified as well as their sensitivity to roll-off. Impact of additive on metal gate function is studied. Finally, ab initio enables an analysis of the dipole formation with additive at the SiO2/HfO2 interface.

  15. Atomic layer deposition of metallic cobalt

    NASA Astrophysics Data System (ADS)

    Kwon, Jinhee; Saly, Mark; Kanjolia, Ravi; Chabal, Yves; University of Texas at Dallas Collaboration; SAFC Collaboration

    2011-03-01

    Metallic cobalt has rich catalytic, electronic and magnetic properties, which makes it critical to have a better control of Co thin film deposition for various applications. This work focuses on the atomic layer deposition (ALD) of cobalt using (tertiarybutylallyl)cobalttricarbonyl (t BuAllyl)Co(CO)3 and dimethylhydrazine (DMHy) on H-terminated Si to uncover the growth mechanisms. The first pulse of (t BuAllyl)Co(CO)3 reacts with surface H--Si bonds completely, forming one monolayer of metallic silicide. In situ infrared absorption spectra show that further deposition of Co is made possible only after linear carbonyl groups which remain after the first (t BuAllyl)Co(CO)3 pulse as the surface ligand are removed by subsequent ALD cycles. Further ALD cycles give rise to metallic Co growth through ligand exchange after a nucleation period of 8--10 cycles. The derived growth rate of cobalt is 0.6 +/- 0.1 Å/cycle. The resultant Co film shows low concentration of carbon and nitrogen impurities in the bulk according to X-ray photoemission spectroscopy.

  16. Charge transport in stacking metal and metal-free phthalocyanine iodides. Effects of packing, dopants, external electric field, central metals, core modification, and substitutions.

    PubMed

    Chen, Shuang; Ma, Jing

    2009-10-01

    The charge-transport properties of the one-dimensional stacking metal phthalocyanine iodides (M(Pc)I, M = Fe, Co, Ni, Cu) and metal-free phthalocyanine iodide (H2(Pc)I) have been theoretically investigated. On the basis of the tight-binding approximation and two-state theory, both the site-energy corrected energy splitting in dimer and Fock-matrix-based methods are used to calculate the transfer integral. The intermolecular motions, including interplanar translation, rotation, slip, and tilt, exert remarkable impacts on the transfer integral. The order/disorder of the dopant stack and the long-range electrostatic interactions are also demonstrated to be crucial factors for modulation of charge-transport properties. The transfer integral undergoes slight changes under an applied electric field along the stacking direction in the range of 10(6)-10(7) V cm(-1). The change of central metals in MPc has little effect on the transfer integrals, but significantly affects the reorganization energies. The extension of the pi-conjugation in macrocyclic ligand brings about considerable influence on the transfer integrals. Peripheral substitutions by animo, hydroxyl, and methyl lead to deviations from planarity of macromolecular rings, and hence affect the valence bands significantly. PMID:19123204

  17. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; Gunapala, S. D.

    1994-01-01

    Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

  18. Effect of π-π+ stacking on the layering of ionic liquids confined to an amorphous carbon surface.

    PubMed

    Gong, Xiao; Kozbial, Andrew; Rose, Franck; Li, Lei

    2015-04-01

    In the current paper, AFM studies were conducted on nanometer-thick ionic liquids (ILs) confined to an amorphous carbon (AC) surface, which is critical to the design of the next-generation media lubricant for hard disk drives (HDDs). The results indicated that the existence of the delocalized ring in the cation is critical to layering of ILs. Extended layering was observed only when there is imidazolium ring in the cation. When the imidazolium ring is replaced by an aliphatic moiety, "drop-on-layer" (dewetting) structure was observed. On the basis of the experimental results, we proposed that π-π+ stacking between sp(2) carbon in the AC and the imidazolium cation in the ILs is the key to the extended layering of ILs at the ILs/AC interface. PMID:25808335

  19. Anisotropy of Earth's D'' layer and stacking faults in the MgSiO3 post-perovskite phase.

    PubMed

    Oganov, Artem R; Martonák, Roman; Laio, Alessandro; Raiteri, Paolo; Parrinello, Michele

    2005-12-22

    The post-perovskite phase of (Mg,Fe)SiO3 is believed to be the main mineral phase of the Earth's lowermost mantle (the D'' layer). Its properties explain numerous geophysical observations associated with this layer-for example, the D'' discontinuity, its topography and seismic anisotropy within the layer. Here we use a novel simulation technique, first-principles metadynamics, to identify a family of low-energy polytypic stacking-fault structures intermediate between the perovskite and post-perovskite phases. Metadynamics trajectories identify plane sliding involving the formation of stacking faults as the most favourable pathway for the phase transition, and as a likely mechanism for plastic deformation of perovskite and post-perovskite. In particular, the predicted slip planes are {010} for perovskite (consistent with experiment) and {110} for post-perovskite (in contrast to the previously expected {010} slip planes). Dominant slip planes define the lattice preferred orientation and elastic anisotropy of the texture. The {110} slip planes in post-perovskite require a much smaller degree of lattice preferred orientation to explain geophysical observations of shear-wave anisotropy in the D'' layer. PMID:16372006

  20. Stacking fault energy of face-centered cubic metals: thermodynamic and ab initio approaches.

    PubMed

    Li, Ruihuan; Lu, Song; Kim, Dongyoo; Schönecker, Stephan; Zhao, Jijun; Kwon, Se Kyun; Vitos, Levente

    2016-10-01

    The formation energy of the interface between face-centered cubic (fcc) and hexagonal close packed (hcp) structures is a key parameter in determining the stacking fault energy (SFE) of fcc metals and alloys using thermodynamic calculations. It is often assumed that the contribution of the planar fault energy to the SFE has the same order of magnitude as the bulk part, and thus the lack of precise information about it can become the limiting factor in thermodynamic predictions. Here, we differentiate between the interfacial energy for the coherent fcc(1 1 1)/hcp(0 0 0 1) interface and the 'pseudo-interfacial energy' that enters the thermodynamic expression for the SFE. Using first-principles calculations, we determine the coherent and pseudo-interfacial energies for six elemental metals (Al, Ni, Cu, Ag, Pt, and Au) and three paramagnetic Fe-Cr-Ni alloys. Our results show that the two interfacial energies significantly differ from each other. We observe a strong chemistry dependence for both interfacial energies. The calculated pseudo-interfacial energies for the Fe-Cr-Ni steels agree well with the available literature data. We discuss the effects of strain on the description of planar faults via thermodynamic and ab initio approaches. PMID:27484794

  1. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  2. Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

    SciTech Connect

    Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali; Murugavel, R.; Rao, C.N.R.

    2015-04-15

    Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a few layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.

  3. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect

    Fadida, S. Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Kymissis, I.

    2014-10-28

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  4. Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

    NASA Astrophysics Data System (ADS)

    dos Santos, Renato B.; de Brito Mota, F.; Rivelino, R.; Kakanakova-Georgieva, A.; Gueorguiev, G. K.

    2016-04-01

    Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.

  5. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-01

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  6. Impact Electrochemistry of Layered Transition Metal Dichalcogenides.

    PubMed

    Lim, Chee Shan; Tan, Shu Min; Sofer, Zdeněk; Pumera, Martin

    2015-08-25

    Layered transition metal dichalcogenides (TMDs) exhibit paramount importance in the electrocatalysis of the hydrogen evolution reaction. It is crucial to determine the size of the electrocatalytic particles as well as to establish their electrocatalytic activity, which occurs at the edges of these particles. Here, we show that individual TMD (MoS2, MoSe2, WS2, or WSe2; in general MX2) nanoparticles impacting an electrode surface provide well-defined current "spikes" in both the cathodic and anodic regions. These spikes originate from direct oxidation of the nanoparticles (from M(4+) to M(6+)) at the anodic region and from the electrocatalytic currents generated upon hydrogen evolution in the cathodic region. The positive correlation between the frequency of the impacts and the concentration of TMD nanoparticles is also demonstrated here, enabling determination of the concentration of TMD nanoparticles in colloidal form. In addition, the size of individual TMD nanoparticles can be evaluated using the charge passed during every spike. The capability of detecting both the "indirect" catalytic effect of an impacting TMD nanoparticle as well as "direct" oxidation indicates that the frequency of impacts in both the "indirect" and "direct" scenarios are comparable. This suggests that all TMD nanoparticles, which are electrochemically oxidizable (thus capable of donating electrons to electrodes), are also capable of catalyzing the hydrogen reduction reaction. PMID:26241193

  7. Synthesis of Stacked-Cup Carbon Nanotubes in a Metal Free Low Temperature System

    NASA Technical Reports Server (NTRS)

    Kimura, Yuki; Nuth, Joseph A.; Johnson, Natasha M.; Farmer, Kevin D.; Roberts, Kenneth P.; Hussaini, Syed R.

    2011-01-01

    Stacked-cup carbon nanotubes were formed by either Fischer-Tropsch type or Haber Bosch type reactions in a metal free system. Graphite particles were used as the catalyst. The samples were heated at 600 C in a gas mixture of CO 75 Torr, N2 75 Torr and H2 550 Torr for three days. Trans mission electron microscope analysis of the catalyst surface at the completion of the experiment recognized the growth of nanotubes. They were 10-50 nm in diameter and approximately 1 micrometer in length. They had a hollow channel of 5-20 nm in the center. The nanotubes may have grown on graphite surfaces by the CO disproportionation reaction and the surface tension of the carbon nucleus may have determined the diameter. Although, generally, the diameter of a carbon nanotube depends on the size of the cataly1ic particles, the diameter of the nanotubes on graphite particles was independent of the particle size and significantly confined within a narrow range compared with that produced using catalytic amorphous iron-silicate nanoparticles. Therefore, they must have an unknown formation process that is different than the generally accepted mechanism.

  8. A study on stack configuration of continuous electrodeionization for removal of heavy metal ions from the primary coolant of a nuclear power plant.

    PubMed

    Yeon, Kyeong-Ho; Song, Jung-Hoon; Moon, Seung-Hyeon

    2004-04-01

    This study investigated the production of high-purity water in the primary coolant of a nuclear power plant via the continuous electrodeionization (CEDI) process, using ion exchange resins as ion-conducting media between ion exchange membranes. The effectiveness of this method was examined with respect to the removal of heavy metals. The study was carried out on a laboratory scale with an effective area of 20 cm(2). The CEDI system was operated with a layered bed of cation exchange resins, anion exchange resins, and mixed-bed ion exchange resins. The stack configuration was designed to prevent a reaction between metal ions and hydroxide ions. The CEDI operation with the layered bed removed more than 99% of the ions at 30% of the current efficiency. The results showed that, with an inlet conductivity of 40 microScm(-1), a linear velocity of 4.17 cms(-1), and an applied current density of 17 mAcm(-2), the CEDI process yielded an outlet conductivity of 0.5 microScm(-1), thereby preventing the precipitation of metal ions. This study therefore successfully demonstrated the feasibility of the CEDI operation for the removal of heavy metals at a very low concentration. PMID:15026246

  9. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  10. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  11. Photoinduced switching to metallic states in the two-dimensional organic Mott insulator dimethylphenazine-tetrafluorotetracyanoquinodimethane with anisotropic molecular stacks

    NASA Astrophysics Data System (ADS)

    Matsuzaki, Hiroyuki; Ohkura, Masa-aki; Ishige, Yu; Nogami, Yoshio; Okamoto, Hiroshi

    2015-06-01

    A photoinduced phase transition was investigated in an organic charge-transfer (CT) complex M2P -TCNQ F4 , [M2P : 5,10-dihydro-5,10-dimethylphenazine, donor (D) molecule; TCNQ F4 : 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, acceptor (A) molecule] by means of femtosecond pump-probe reflection spectroscopy. This is an ionic compound and has a peculiar two-dimensional (2D) molecular arrangement; the same A (or D) molecules arrange along the [100] direction, and A and D molecules alternately arrange along the [111] direction. It results in a strongly anisotropic two-dimensional electronic structure. This compound shows a structural and magnetic phase transition at 122 K below which the two neighboring molecules are dimerized along both the [100] and [111] directions. We demonstrate that two kinds of photoinduced phase transitions occur by irradiation of a femtosecond laser pulse; in the high-temperature lattice-uniform phase, a quasi-one-dimensional (1D) metallic state along the AA(DD) stack is generated, and in the low-temperature lattice-dimerized phase, a quasi-2D metallic state is initially produced and molecular dimerizations are subsequently released. Mixed-stack CT compounds consisting of DA stacks are generally insulators or semiconductors in the ground state. Here, such a dynamical metallization in the DA stack is demonstrated. The release of the dimerizations drives several kinds of coherent oscillations which play an important role in the stabilization of the lattice-dimerized phase. The mechanisms of those photoinduced phase transitions are discussed in terms of the magnitudes of the anisotropic bandwidths and molecular dimerizations along two different directions of the molecular stacks.

  12. New layered metal oxides as positive electrode materials for room-temperature sodium-ion batteries

    NASA Astrophysics Data System (ADS)

    Mu, Lin-Qin; Hu, Yong-Sheng; Chen, Li-Quan

    2015-03-01

    In order to achieve better Na storage performance, most layered oxide positive electrode materials contain toxic and expensive transition metals Ni and/or Co, which are also widely used for lithium-ion batteries. Here we report a new quaternary layered oxide consisting of Cu, Fe, Mn, and Ti transition metals with O3-type oxygen stacking as a positive electrode for room-temperature sodium-ion batteries. The material can be simply prepared by a high-temperature solid-state reaction route and delivers a reversible capacity of 94 mAh/g with an average storage voltage of 3.2 V. This paves the way for cheaper and non-toxic batteries with high Na storage performance. Project supported by the National Natural Science Foundation of China (Grant Nos. 51222210 and 11234013) and the One Hundred Talent Project of the Chinese Academy of Sciences.

  13. The stacking interactions of bipyridine complexes: the influence of the metal ion type on the strength of interactions.

    PubMed

    Sredojević, Dušan N; Petrović, Predrag V; Janjić, Goran V; Brothers, Edward N; Hall, Michael B; Zarić, Snežana D

    2016-01-01

    The strength of the stacking interactions in the bipy complexes of nickel, palladium, and platinum, [M(CN)2 bipy]2 (M = Ni, Pd, Pt), was calculated using the ωB97xD/def2-TZVP method. The results show that for all considered geometries, interactions are the strongest for platinum, and weakest for nickel complexes, as a result of higher dispersion contributions of platinum over the palladium and nickel complexes. It was also shown that strength of interactions considerably rises with an increase of the stacking overlap area. As a consequence of the favorable electrostatic term, the strength of interactions also rises when metal atom and cyano ligands are involved in the overlap with bipy ligand. The strongest interaction was calculated in the platinum complex, for the geometry that has overlap of metal and cyano ligands with bipy ligand with an energy of -39.80 kcal mol(-1). The energies for similar geometries of palladium and nickel complexes are -34.60 and -32.45 kcal mol(-1). These energies, remarkably, exceed the strength of the stacking interactions between organic aromatic molecules. These results can be of importance in all systems with stacking interactions, from materials to biomolecules. PMID:26757913

  14. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

    NASA Astrophysics Data System (ADS)

    Yen, Shiang-Shiou; Cheng, Chun-Hu; Lan, Yu-Pin; Chiu, Yu-Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Shao-Chin; Jiang, Zhe-Wei; Hung, Li-Yue; Tsai, Chi-Chung; Chang, Chun-Yen

    2016-04-01

    High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 µm 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology.

  15. Characterization of cylindrical terahertz metallic hollow waveguide with multiple dielectric layers.

    PubMed

    Sun, Bang-Shan; Tang, Xiao-Li; Zeng, Xuan; Shi, Yi-Wei

    2012-10-20

    Dielectric-coated metallic hollow waveguides (DMHW) are drawing considerable attention for their application in terahertz (THz) waveguiding. This paper theoretically analyzes the multilayer structure to reduce the transmission and bending loss of DMHW. The efficiency of THz multilayer DMHW depends on a proper selection of dielectric materials and geometrical parameters. The low-loss properties are demonstrated by studying the multilayer gold waveguides with a stack of polypropylene (PP) and Si-doped polypropylene (PP(Si)). Comparisons are made with single-layer Au/PP and Au-only waveguides. The effect of dielectric absorption is discussed in detail. It is found that low index dielectric causes more additional loss than that of high index dielectric layers. Several design considerations for the THz multilayer DMHW are pointed out by studying the effects of multilayer structure parameters with a stack of polyethylene (PE) and TiO(2)-doped polyethylene (PE(TiO2)). We conclude that the inner radius of the waveguide and the refractive indices of the dielectrics tend to be larger in order to reduce the influence of material absorption. An optimal value exists for the total number of layers when the dielectrics are absorptive. The absorption tolerances are pointed out to guarantee a smaller loss for multilayer DMHW than that of metal-only waveguide. Finally, a fabrication method for THz multilayer DMHW Ag/PE/PE(TiO2) is proposed based on co-rolling technique. PMID:23089782

  16. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials – A general bond polarizability model

    PubMed Central

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Ying Quek, Su

    2015-01-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials. PMID:26469313

  17. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials--A general bond polarizability model.

    PubMed

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Quek, Su Ying

    2015-01-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical z(xx)z configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials. PMID:26469313

  18. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  19. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  20. Identifying different stacking sequences in few-layer CVD-grown Mo S2 by low-energy atomic-resolution scanning transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Yan, Aiming; Chen, Wei; Ophus, Colin; Ciston, Jim; Lin, Yuyuan; Persson, Kristin; Zettl, Alex

    2016-01-01

    Atomically thin Mo S2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer Mo S2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer Mo S2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer Mo S2 displays a new stacking sequence distinct from the commonly observed 2 H and 3 R phases of Mo S2 . Density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

  1. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  2. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

    NASA Astrophysics Data System (ADS)

    El Kazzi, M.; Czornomaz, L.; Rossel, C.; Gerl, C.; Caimi, D.; Siegwart, H.; Fompeyrine, J.; Marchiori, C.

    2012-02-01

    Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO2/1 nm Al2O3/1 nm a-Si gate stacks on p-In0.53Ga0.47As/InP (001) substrates. Thanks to the presence of the Al2O3 barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication process. The capacitors exhibit excellent electrical characteristics with scaled equivalent oxide thickness (EOT) of 0.89 nm and mid-gap interface state density of 5 × 1011 eV-1 cm-2 upon post-metallization anneal up to 550 °C. Gate-first, self-aligned MOS field-effect-transistors were fabricated with a similar 5 nm HfO2/1 nm Al2O3/1 nm a-Si gate stack and raised source and drain (600 °C for 30 min). Owing to the excellent thermal stability of the stack, no degradation of the gate stack/semiconductor interface is observed, as demonstrated by the excellent capacitance vs voltage characteristics and the good mobility values (peak at 1030 cm2 V-1 s-1 and 740 cm2 V-1 s-1 at carrier density of 6.5 × 1012 cm-2) for a 1.3 nm EOT.

  3. Frictional sliding in layered rock: Preliminary experiments on stacked Lexan plates

    SciTech Connect

    Perry, K.E. Jr.; Epstein, J.S.; Jung, J.

    1995-12-31

    Understanding the mechanical behavior of jointed-rock masses is of critical importance to designing and predicting the performance of a potential nuclear waste repositiry. To this end we have studied the frictional sliding between simulated rock joints using phase shifting moire interferometry. Preliminary calibration models were made from stacks of Lexan plates that were sand-blasted to provide a uniform frictional interface. Load was applied monotonically and phase shifted moire fringe patterns were recorded at three different load states. Plots of slip along the interfaces for the model are presented to demonstrate the ability of the photomechanics technique to provide precise measurements of in-plane displacement, and ultimately the slip between the plates.

  4. Ordered stacking of F-actin layers and mixed lipid bilayers: a columnar liquid crystal.

    PubMed

    Caillé, A; Artzner, F; Amblard, F

    2013-01-25

    In this Letter, we show how the grooved helical structure of actin microfilaments (F-actin) interacting with mixed fluid lipid bilayers leads to handedness-independent 1D lipid bilayer undulations coupled to longitudinal in-plane ordering of the microfilaments. This longitudinal ordering is forced by the emerging in-plane compression and curvature energy terms of the straight 1D bilayer undulation wave fronts. Thereby, adjacent helices are set into registry along their long axis in their monolayer and π shifted between adjacent monolayers. An ordered composite multilamellar structure emerges by alternate stacking of these lipid bilayers and monolayers of F-actin. This two-dimensionally ordered system has the symmetries of a centered rectangular columnar liquid crystal, the straight 1D wave fronts playing the role of the classical molecular columns. PMID:25166203

  5. Molecular Interdiffusion between Stacked Layers by Solution and Thermal Annealing Processes in Organic Light Emitting Devices.

    PubMed

    Ohisa, Satoru; Pu, Yong-Jin; Yamada, Norifumi L; Matsuba, Go; Kido, Junji

    2015-09-23

    In organic light emitting devices (OLEDs), interfacial structures between multilayers have large impacts on the characteristics of OLEDs. Herein, we succeeded in revealing the interdiffusion in solution processed and thermal annealed OLEDs by neutron reflectometry. We investigated interfaces between a polymer under layer and small molecules upper layer. The small molecules diffused into the swollen polymer layer during the interfacial formation by the solution process, but the polymer did not diffuse into the small molecules layer. At temperatures close to the glass transition temperatures of the materials, asymmetric molecular diffusion was observed. We elucidated the effects of the interdiffusion on the characteristics of OLEDs. Partially mixing the interface improved the current efficiencies due to suppressed triplet-polaron quenching at the interface. Controlling and understanding the interfacial structures of the miultilayers will be more important to improve the OLED characteristics. PMID:26331696

  6. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    SciTech Connect

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; LeSar, Richard

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into two distinct regimes corresponding to 'low' and 'high' stacking fault energies.

  7. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    DOE PAGESBeta

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; LeSar, Richard

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into twomore » distinct regimes corresponding to 'low' and 'high' stacking fault energies.« less

  8. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  9. Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

    NASA Astrophysics Data System (ADS)

    Lutsenko, E. V.; Rzheutski, M. V.; Pavlovskii, V. N.; Yablonskii, G. P.; Alanzi, M.; Hamidalddin, A.; Alyamani, A.; Mauder, C.; Kalisch, H.; Reuters, B.; Heuken, M.; Vescan, A.; Naresh-Kumar, G.; Trager-Cowan, C.

    2016-01-01

    The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO2 (100) substrates were investigated. Temperature-dependent and time-resolved photoluminescence (PL), X-ray diffraction and Raman scattering measurements were performed to analyze the correlation of the sample properties with the density of I1-type basal-plane stacking faults (BSFs). Electron channeling contrast imaging was used to reveal and calculate the density of BSFs reaching the surface of an m-plane GaN/LiAlO2 layer. It was shown that a local increase of BSF density in the investigated samples results in a rise of the total PL efficiency at low temperatures because of the localization of excitons at BSFs and, therefore, a suppression of their diffusion to nonradiative centers. Parameters of time decay and temperature quenching of the BSF-related PL band were determined. A correlation of both εxx and εzz strain components with the BSFs and crystal mosaicity was observed, and possible reasons of this correlation are discussed.

  10. Thermal and optical stability of injected charge in stacked dielectric layers

    NASA Astrophysics Data System (ADS)

    Wrana, M.; Schmidt, M.; Bräunig, D.

    1997-04-01

    Dielectric layer configurations of silicon dioxide/silicon nitride and silicon dioxide/silicon nitride/silicon dioxide were used to build up accumulation layers for back surface fields as well as inversion layers for inversion-layer solar cells. The silicon nitride was prepared by plasma-enhanced or low-pressure chemical vapour deposition. The high neutral trap concentration (0268-1242/12/4/004/img1) of the silicon nitride layer was utilized to increase the fixed charge, because these traps could be negatively charged by electron injection (photoinjection during an applied bias) or positively charged by photo-depopulation. The traps were charged/discharged by the irradiation of a deuterium lamp (4 eV to 6 eV) and the injected charge was measured by high-frequency capacitance - voltage measurements. We investigated the stability of injected charge with respect to temperature 0268-1242/12/4/004/img2 and optical degradation below air mass 1.5 condition (AM1.5). To explain the stability behaviour, we determined the band-offsets. Temperature stability could be confirmed for all examined configurations, but optical stability was seen only for the system 0268-1242/12/4/004/img3.

  11. Resonant interaction of light with a stack of alternating layers of a cholesteric liquid crystal and an isotropic medium

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.

    2015-12-01

    Resonance properties of a stack consisting of a cholesteric liquid crystal and isotropic medium layers are investigated. Bragg's conditions for photonic band gaps are presented for the considered system. It is shown that a significant control of the system zone structure is possible in the case of a proper selection of the sublayer parameters. It is also shown that an effect of complete suppression of absorption is not usually observed in the case of anisotropic absorption in cholesteric liquid crystal sublayers. The possibility to achieve this effect in the considered system, imposing certain conditions on the thickness and the refraction index of the isotropic medium sublayers, is shown. Also, it is shown that in such conditions a large increase of the maximum of photonic density of states happens at the appropriate zone borders.

  12. Piezo-stack vortex generators for boundary layer control of a delta wing micro-aerial vehicle

    NASA Astrophysics Data System (ADS)

    Mystkowski, Arkadiusz

    2013-11-01

    This paper presents an idea for the control of flow separation over solid surfaces by piezo-stack vortex generators. The vortex generators are small vibrating plates attached to the delta wing surface. A model of the micro-aerial vehicle (MAV) controlled by vortex piezo-generators is presented. The vortex generators are applied to produce the appropriate aerodynamical forces and moments controlling the flight of the aircraft. The efficiency of the vortex generators is proved by the wind tunnel test results. The oscillatory added lift and drag coefficients versus angle of attack are presented. The optimal vortex generator amplitude and frequency are investigated. Boundary layer control (BLC) for delta wing micro-aircraft increases the manoeuvrability and performance of the MAV.

  13. Hard X-ray photoemission experiments on novel Ge-based metal gate/high-k stacks

    NASA Astrophysics Data System (ADS)

    Rubio-Zuazo, J.; Martinez, E.; Batude, P.; Clavelier, L.; Soria, F.; Chabli, A.; Castro, G. R.

    2007-09-01

    The scaling of CMOS devices makes mandatory the study of new materials to overcome the physical limitations of the Si technology. Germanium is a good candidate to replace silicon for the channel to improve the carrier mobility. High-K dielectrics such as HfO2 are investigated to replace the gate oxide (SiO2) to decrease both leakage currents and EOT. For the gate electrode, it is also crucial to move from poly-silicon to a metal gate like TiN to adjust work function and to suppress poly-depletion in order to decrease EOT. However, to reach optimal device performances, both the Ge/high-K and high-K/TiN interfaces need to be optimized. In order to passive and prevent Ge oxidation we have deposited a very thin Si interlayer prior to the high-k growth. A thin Si layer (Si capping) is epitaxially grown on Ge and then partially oxidized before high-k deposition. The exact control of the Si capping layer is of major importance. It must be enough thick to prevent germanium oxidation when the partial oxidation of Si is realized and as low as possible in order to keep the benefit of the better transport properties in germanium. In this contribution, we present non-destructive chemical and concentration profile of both critical buried interfaces by mean of Hard X-ray Photoelectron Spectroscopy (HAXPES) of a Ge/Si/SiO2/HfO2/TiN stack, with thickness of 2500, 0.9, 0.5, 4 and 4 nm, respectively. Experiments are performed at the SpLine HAXPES station of the ESRF equipped with a novel photoemission set-up in combination with surface X-ray diffraction (SXRD). The profiles obtained clearly show that the Si interlayer prevents the Ge oxidation and the presence of a new Hf state which is related to an interface chemical shift. Our results demonstrate the excellent capability of HAXPES to study buried interfaces.

  14. Compositional modulated atomic layer stacking and uniaxial magnetocrystalline anisotropy of CoPt alloy sputtered films with close-packed plane orientation

    SciTech Connect

    Saito, Shin Nozawa, Naoki; Hinata, Shintaro; Takahashi, Migaku; Shibuya, Kazunari; Hoshino, Kazuya; Awaya, Satoru

    2015-05-07

    An atomic layer stacking structure in hexagonal close packed (hcp) Co{sub 100−x}Pt{sub x} alloy films with c-plane sheet texture was directly observed by a high-angle annular dark-field imaging scanning transmission electron microscopy. The analysis of sequential and/or compositional atomic layer stacking structure and uniaxial magnetocrystalline anisotropy (K{sub u} = K{sub u1} + K{sub u2}) revealed that (1) integrated intensity of the superlattice diffraction takes the maximum at x = 20 at. % and shows broadening feature against x for the film fabricated under the substrate temperature (T{sub sub}) of 400 °C. (2) Compositional separation structure in atomic layers is formed for the films fabricated under T{sub sub} = 400 °C. A sequential alternative stacking of atomic layers with different compositions is hardly formed in the film with x = 50 at. %, whereas easily formed in the film with x = 20 at. %. This peculiar atomic layer stacking structure consists of in-plane-disordered Pt-rich and Pt-poor layers, which is completely different from the so-called atomic site ordered structure. (3) A face centered cubic atomic layer stacking as faults appeared in the host hcp atomic layer stacking exists in accompanies with irregularities for the periodicity of the compositional modulation atomic layers. (4) K{sub u1} takes the maximum of 1.4 × 10{sup 7 }erg/cm{sup 3} at around x = 20 at. %, whereas K{sub u2} takes the maximum of 0.7 × 10{sup 7 }erg/cm{sup 3} at around x = 40 at. %, which results in the maximum of 1.8 × 10{sup 7 }erg/cm{sup 3} of K{sub u} at x = 30 at. % and a shoulder in compositional dependence of K{sub u} in the range of x = 30–60 at. %. Not only compositional separation of atomic layers but also sequential alternative stacking of different compositional layers is quite important to improve essential uniaxial magnetocrystalline anisotropy.

  15. About the strain state of different metal oxide layers epitaxially grown on Si(1 1 1)

    NASA Astrophysics Data System (ADS)

    Zaumseil, P.; Schroeder, T.

    2011-02-01

    The strain state of metal oxides Pr2O3, Y2O3 and Sc2O3 used as buffer material in different heteroepitaxially grown semiconductor-oxide-Si(1 1 1) layer stacks was studied by x-ray diffraction techniques at room temperature (RT) and near the growth temperature of 625 °C. A broad spectrum of different strain states was found depending on preparation conditions, layer combination and layer thickness. Pr2O3 behaves differently from the other two investigated oxides as it grows in a hexagonal phase on Si(1 1 1) and must be transformed into the stable cubic phase by annealing processes. This transformation is accompanied by the creation of an amorphous silicate interface layer that leads to a decoupling of substrate and oxide lattices and finally to a partial relaxation of the cub-Pr2O3 layer only. High-temperature measurements demonstrate that there exists a measurable difference between the strain state at RT, where x-ray measurements are typically performed, and at growth temperature. The coefficient of thermal expansion of different metal oxides was measured in thin film structures for the first time. These coefficients are significantly higher compared with that of Si, which leads to an additional tensile strain component when the samples are cooled down to RT.

  16. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    NASA Astrophysics Data System (ADS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-04-01

    Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  17. The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-05-01

    Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

  18. Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes.

    PubMed

    Soni, Rohit; Meuffels, Paul; Petraru, Adrian; Hansen, Mirko; Ziegler, Martin; Vavra, Ondrej; Kohlstedt, Hermann; Jeong, Doo Seok

    2013-12-21

    Bipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx-Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current-voltage (I-V) hysteresis of ECM cells whereas Type 2 ECM cell, Pt (bottom electrode)/Ge0.3Se0.7/SiOx/Cu(top electrode), showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in Type 2 cell is lower than that in Type 1 cell while on-switching voltage in both cells is almost the same. An attempt to understand this electrolyte-stack-sequence-depending switching polarity reversal was made in terms of the ECM cell potential change upon the electrolyte stack sequence and the consequent change in Cu filament growth direction. Relevant experimental evidence for the hypothesis was obtained regarding the switching behaviours. Furthermore, given the switching polarity reversal, feasibility of serial complementary resistive switches was also demonstrated. PMID:24177268

  19. Energy dissipation in intercalated carbon nanotube forests with metal layers

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Vertically aligned carbon nanotube (CNT) forests were synthesized to study their quasi-static mechanical properties in a layered configuration with metallization. The top and bottom surfaces of CNT forests were metalized with Ag, Fe, and In using paste, sputtering, and thermal evaporation, respectiv...

  20. Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

    NASA Astrophysics Data System (ADS)

    Semmelroth, K.; Berwian, P.; Schröter, C.; Leibiger, G.; Schönleber, M.; Friedrich, J.

    2015-10-01

    For improved real-time process control we integrated a novel optical in-situ monitoring system in a vertical reactor for hydride vapor phase epitaxy (HVPE) growth of gallium nitride (GaN) bulk crystals. The in-situ monitoring system consists of a fiber-optical interferometric sensor in combination with an optimized differential measuring head. The system only needs one small optical path perpendicular to the center of the layer stack typically consisting of sapphire as substrate and GaN. It can handle sample distances up to 1 m without difficulty. The in-situ monitoring system is simultaneously measuring the optical layer thicknesses of the GaN/sapphire layer stack and the absolute change of the distance between the measuring head and the backside of the layer stack. From this data it is possible to calculate the thickness of the growing GaN up to a thickness of about 1000 μm and the absolute change in curvature of the layer stack. The performance of the in-situ monitoring system is shown and discussed based on the measured interference signals recorded during a short-time and a long-time HVPE growth run.

  1. Layer-by-layer synthesis of metal-containing conducting polymers: caged metal centers for interlayer charge transport.

    PubMed

    Liu, Wenjun; Huang, Weijie; Pink, Maren; Lee, Dongwhan

    2010-09-01

    Metal-templated [2 + 3]-type cocondensation of a pi-extended boronic acid and nioxime furnished a series of cage molecules, which were electropolymerized to prepare metal-containing conducting polymers (MCPs). Despite sharing essentially isostructural organic scaffolds, these materials display metal-dependent electrochemical properties as evidenced by different redox windows observed for M = Co, Fe, Ru. Consecutive electropolymerization using two different monomers furnished bilayer MCPs having different metals in each layer. In addition to functioning as heavy atom markers in cross-sectional analysis by FIB and EDX, redox-active metal centers participate in voltage-dependent interlayer electron transport to give rise to cyclic voltammograms that are distinctively different from those of each layer alone or random copolymers. A simple electrochemical technique can thus be used as a straightforward diagnostic tool to investigate the structural ordering of electrically conductive layered materials. PMID:20690667

  2. The mesospheric metal layer topside: a possible connection to meteoroids

    NASA Astrophysics Data System (ADS)

    Höffner, J.; Friedman, J. S.

    2004-05-01

    In the past, many studies have been carried out to demonstrate the influence of meteoroids on the atmospheric metal layer, observed roughly in the altitude range 80-105 km. Even with the capability of present day resonance lidars to measure metal densities within single meteor trails, it has been difficult to prove any influence of meteors on the average metal layer. In contrast to approaches taken earlier, we discuss here the seasonal characteristics of potassium, calcium, calcium ion, iron and sodium above 110 km altitude where the average nocturnal densities are so low that the existence of a baseline level of metal atoms and ions is often overlooked. By comparing simultaneous and common-volume observations of different metal layers at one location, we demonstrate that despite their different seasonal characteristics at lower altitudes remarkably similar seasonal characteristics are observed at higher altitudes. In addition, a qualitative agreement is also found for potassium at different latitudes. A comparison of metal densities at 113 km altitude with known meteor showers indicates a strong influence of shower meteoroids on the topside of the metal layers. Simultaneous observations of K along with Ca, Fe and/or Na permit the calculation of abundance ratios, which at 113 km altitude are quite similar to values measured in single meteor trails by ground based lidars. Furthermore, the increase in densities throughout summer is strong evidence for the influence of sporadic meteoroids on the high metal layers. This increase correlates well with the seasonal variation of sporadic micrometeor input independent of meteor showers. Given these evidences, we contend that there is a direct influence of ablating meteoroids on the topside of the mesospheric metal layer.

  3. Two-dimensionally stacked heterometallic layers hosting a discrete chair dodecameric ring of water clusters: synthesis and structural study.

    PubMed

    Kenfack Tsobnang, Patrice; Wenger, Emmanuel; Biache, Coralie; Lambi Ngolui, John; Ponou, Siméon; Dahaoui, Slimane; Lecomte, Claude

    2014-10-01

    The stacked two-dimensional supramolecular compound catena-{Co(amp)3Cr(ox)3·6H2O} (amp = 2-picolylamine, ox = oxalate) has been synthesized from the bimolecular approach using hydrogen bonds. It is built from layers in which both Co(amp)(3+) (D) and Cr(ox)(3-) (A) ions are bonded in a repeating DADADA… pattern along the a and c axes by multiple hydrogen bonds. These layers host a well resolved R12 dodecameric discrete ring of water clusters built by six independent molecules located around the 2c centrosymmetric Wyckoff positions of the P21/n space group in which the compound crystallizes. These clusters are ranged along the [001] direction, occupy 733.5 Å(3) (22.0%) of the unit cell and have a chair conformation via 12 hydrogen bonds. The water molecules of the cluster are linked with stronger hydrogen bonds than those between the cluster and its host, which explains the single continuous step of the dehydration process of the compound. PMID:25274525

  4. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    NASA Astrophysics Data System (ADS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-04-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green's functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green's function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  5. Method of adhesion between an oxide layer and a metal layer

    DOEpatents

    Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

    2004-09-14

    A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

  6. Closed and open-ended stacking fault tetrahedra formation along the interfaces of Cu-Al nanolayered metals

    NASA Astrophysics Data System (ADS)

    Li, Ruizhi; Beng Chew, Huck

    2015-09-01

    Stacking fault tetrahedra (SFTs) are volume defects that typically form by the clustering of vacancies in face-centred cubic (FCC) metals. Here, we report a dislocation-based mechanism of SFT formation initiated from the semi-coherent interfaces of Cu-Al nanoscale multilayered metals subjected to out-of-plane tension. Our molecular dynamics simulations show that Shockley partials are first emitted into the Cu interlayers from the dissociated misfit dislocations along the Cu-Al interface and interact to form SFTs above the triangular intrinsic stacking faults along the interface. Under further deformation, Shockley partials are also emitted into the Al interlayers and interact to form SFTs above the triangular FCC planes along the interface. The resulting dislocation structure comprises closed SFTs within the Cu interlayers which are tied across the Cu-Al interfaces to open-ended SFTs within the Al interlayers. This unique plastic deformation mechanism results in considerable strain hardening of the Cu-Al nanolayered metal, which achieves its highest tensile strength at a critical interlayer thickness of ~4 nm corresponding to the highest possible density of complete SFTs within the nanolayer structure.

  7. Modeling of the effective work function instability in metal/high-κ dielectric stacks

    NASA Astrophysics Data System (ADS)

    Fet, A.; Häublein, V.; Bauer, A. J.; Ryssel, H.; Frey, L.

    2010-06-01

    This paper discusses the effective work function instability in high-κ-based MOS gate stacks, which occurs after high temperature (1070 °C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The Vfb roll-off effect is also discussed and can be described by the model.

  8. A further comparison of graphene and thin metal layers for plasmonics.

    PubMed

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-21

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters. PMID:27138936

  9. Investigation of fade-out mechanism of resonance modes in optical transmission using stacked metallic sub-wavelength slit arrays

    NASA Astrophysics Data System (ADS)

    Tokuda, Yasunori; Sakaguchi, Koichiro; Takano, Keisuke; Fukushima, Takehiro; Hangyo, Masanori

    2014-06-01

    We investigated the behavior of optical transmission modes in stacked systems composed of metallic sub-wavelength slit-array plates separated by air gaps using simulations based on the finite-difference time-domain method. In double- and triple-stacked structures without a lateral displacement between the plates, the Fabry-Perot-like waveguide resonance modes are classified according to whether the resonance frequencies depend strongly on the air-gap spacing. By introducing a lateral displacement of the plates for both double- and triple-stacked structures, we found that the modes of one category, which were barely affected by changes in the air-gap spacing without the displacement, vary their resonance frequencies considerably when the optical paths are extremely narrow within the air-gap regions and, then, rapidly but continuously attenuate through mixing with the modes of the other category. We demonstrate that this marked behavior results from a manifest distortion in the spatial distribution of the electromagnetic fields for the modes of the first category, induced by the boundary condition at the slit ends changing from open-open to open-closed. Although all resonance modes in the two-tier system disappear continuously through cooperative mode mixing, some modes remain in the three-tier system that vanishes independently and discontinuously as the optical paths become blocked. These findings are indispensable for practical applications and for gaining a deeper understanding of this type of metamaterial.

  10. Graphene-GaAs-graphene stacked layers for the improvement of the transmission at the wavelength of 1.55 μm

    NASA Astrophysics Data System (ADS)

    Ajlani, Hosni; Azizi, Mohamed Karim; Gharsallah, Ali; Oueslati, Meherzi

    2016-07-01

    Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which initially exhibit only 30% transmission at 1.55 μm, allows the active control of the transmission by the adjustment of the graphene chemical potential. Transmission of almost 100% at the wavelength of 1.55 μm is achieved after addition of graphene layers. These results show the potential role of stacked graphene-GaAs-graphene layers in the development of new optical active communications devices.

  11. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  12. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    NASA Astrophysics Data System (ADS)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  13. Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process

    SciTech Connect

    Peng, Kun; Jiang, Pan; Zhu, Jiajun; Zhou, Lingping; Li, Deyi

    2014-12-15

    Graphical abstract: Layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared. - Highlights: • Novel hexagonal layer-stack structure CdO micro-rods were synthesized by a thermal evaporation method. • The pre-oxidation, vapor pressure and substrate nature play a key role on the formation of CdO rods. • The formation mechanism of CdO micro-rods was explained. - Abstract: Novel layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared by pre-oxidizing Cd granules and subsequent thermal oxidation under normal atmospheric pressure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to characterize the phase structure and microstructure. The pre-oxidation process, vapor pressure and substrate nature were the key factors for the formation of CdO micro-rods. The diameter of micro-rod and surface rough increased with increasing of thermal evaporation temperature, the length of micro-rod increased with the increasing of evaporation time. The formation of hexagonal layer-stack structure was explained by a vapor–solid mechanism.

  14. Single-layer transition metal sulfide catalysts

    DOEpatents

    Thoma, Steven G.

    2011-05-31

    Transition Metal Sulfides (TMS), such as molybdenum disulfide (MoS.sub.2), are the petroleum industry's "workhorse" catalysts for upgrading heavy petroleum feedstocks and removing sulfur, nitrogen and other pollutants from fuels. We have developed an improved synthesis technique to produce SLTMS catalysts, such as molybdenum disulfide, with potentially greater activity and specificity than those currently available. Applications for this technology include heavy feed upgrading, in-situ catalysis, bio-fuel conversion and coal liquefaction.

  15. Direct current voltage generated in metallic layers by spin pumping

    NASA Astrophysics Data System (ADS)

    Vilela-Leão, L. H.; da Silva, G. L.; Salvador, C.; Rezende, S. M.; Azevedo, A.

    2011-04-01

    We report an investigation of the dc voltage generated in a normal-metal (NM) layer by spin pumping from an adjacent ferromagnetic (FM) layer under ferromagnetic resonance (FMR) excitation. The spin-current injected across the FM/NM interface by the spin pumping effect generates a charge current along the NM layer by means of the inverse spin Hall effect. Room temperature field scan measurements were made in a series of Ni81Fe19/Pt bilayers with several thicknesses of the FM and Pt layers. By varying the angle of the in-plane magnetization we are able to accurately separate the contributions arising from anisotropic magnetoresistance and from the spin-current pumped into the NM layer by the precessing magnetization of the FM layer. The data for the spin pumping dc voltage is in excellent agreement with a theory incorporating the full dependence on the thicknesses of the FM and NM layers.

  16. Direct determination of the stacking order in Gd{sub 2}O{sub 3} epi-layers on GaAs.

    SciTech Connect

    Yacoby, Y.; Sowwan, M.; Pindak, R.; Cross, J.; Walko, D.; Stern, E.; Pitney, J.; MacHarrie, R.; Hong, M.; Clarke, R.; Experimental Facilities Division; Hebrew Univ.; BNL; Univ. of Washington; Bell Lab Agere Stystems; Univ. of Michigan

    2003-01-01

    We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.

  17. Stacking of adjacent graphene layers grown on C-face SiC

    NASA Astrophysics Data System (ADS)

    Johansson, L. I.; Watcharinyanon, S.; Zakharov, A. A.; Iakimov, T.; Yakimova, R.; Virojanadara, C.

    2011-09-01

    Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimation with Ar as the buffer inert gas. The results of studies of the morphology, thickness, and electronic structure of these samples using low-energy electron microscopy (LEEM), x-ray photoelectron emission microscopy, photoelectron spectroscopy, angle-resolved photoelectron spectroscopy (ARPES), and low-energy electron diffraction (LEED) are presented. The graphene thickness is determined to vary from 1 or 2 to 6 or 7 monolayers (MLs), depending on the specific growth conditions utilized. The formation of fairly large grains (i.e., crystallographic domains) of graphene exhibiting sharp 1×1 spots in micro-LEED is revealed. Adjacent grains are found to show different azimuthal orientations. Macro-LEED patterns recorded mimic previously published, strongly modulated, diffraction ring LEED patterns, indicating contribution from several grains of different azimuthal orientations. We collected selected area constant initial energy photoelectron angular distribution patterns that show the same results. When utilizing a small aperture size, one Dirac cone centered on each of the six K-points in the Brillouin zone is clearly resolved. When using a larger aperture, several Dirac cones from differently oriented grains are detected. Our findings thus clearly show the existence of distinct graphene grains with different azimuthal orientations; they do not show adjacent graphene layers are rotationally disordered, as previously reported for C-face graphene. The graphene grain size is shown to be different on the different samples. In some cases, a probing area of 400 nm is needed to detect the grains. On one sample, a probing area of 5 μm can be used to collect a 1×1 LEED pattern from a multilayer graphene grain. ARPES is used to determine the position of the Dirac point relative to the Fermi level on two samples that LEEM shows have dominant coverage of 2 and 3 MLs of graphene

  18. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  19. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study. PMID:25852428

  20. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  1. Methods of Fabricating a Layer of Metallic Glass-Based Material Using Immersion and Pouring Techniques

    NASA Technical Reports Server (NTRS)

    Hofmann, Douglas (Inventor)

    2015-01-01

    Systems and methods in accordance with embodiments of the invention implement layers of metallic glass-based materials. In one embodiment, a method of fabricating a layer of metallic glass includes: applying a coating layer of liquid phase metallic glass to an object, the coating layer being applied in a sufficient quantity such that the surface tension of the liquid phase metallic glass causes the coating layer to have a smooth surface; where the metallic glass has a critical cooling rate less than 1000 K/s; and cooling the coating layer of liquid phase metallic glass to form a layer of solid phase metallic glass.

  2. Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator.

    PubMed

    Lu, Zhixing; Sun, Lifei; Xu, Guanchen; Zheng, Jingying; Zhang, Qi; Wang, Jingyi; Jiao, Liying

    2016-05-24

    Chemical vapor deposition (CVD) has shown great potential in synthesizing various high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, the nondestruction transfer of these CVD-grown 2D TMDCs at a high yield remains a key challenge for applying these emerging materials in various aspects. To address this challenge, we designed a water-soluble transfer mediator consisting of two polymers, polyvinylpyrrolidone (PVP) and poly(vinyl alcohol) (PVA), which can form strong interactions with CVD-grown 2D TMDCs for the nondestruction transfer of these materials. With this mediator, we realized the physical transfer of CVD-grown MoS2 flakes and several other 2D TMDCs, including 2D alloys and heterostructures to a wide range of substrates at a high yield of >90% with well-retained properties as evidenced by various microscopic, spectroscopic, and electrical measurements. Field-effect transistors (FETs) made on thus-transferred CVD-grown MoS2 monolayers exhibited obviously higher mobility than those transferred by chemical method. We also constructed several artificial 2D crystals showing very strong interlayer coupling by the multiple transfer of CVD-grown 2D TMDCs monolayers with this approach. This transfer approach will make versatile CVD-grown 2D materials and their artificial stacks with pristine qualities easily accessible for both fundamental studies and practical applications. PMID:27158832

  3. Multi-Scale Mechanical Probing Techniques To Investigate The Stability Of BEOL Layer Stacks With Sub-100 nm Structures

    NASA Astrophysics Data System (ADS)

    Geisler, Holm; Lehr, Matthias U.; Platz, Alexander; Mayer, Ulrich; Hofmann, Petra; Engelmann, Hans-Jürgen

    2011-09-01

    The stress levels induced by chip-package interaction (CPI) impose an increased risk of mechanical failure on advanced backend-of-line (BEOL) layer stacks in microelectronic circuits if they contain fragile ultralow-k (ULK) interlayer dielectric (ILD) films. On the one hand, multilevel finite element modeling is used to assess the potential risk at an early stage of the development of new microelectronic products. On the other hand, the theoretical models need as accurate as possible materials parameters as an input to provide realistic results. Moreover, it is highly desirable to have multi-scale experimental probes available which can provide complementary data to support the modeling calculations. The present paper provides an overview about various mechanical probing techniques which operate on the scale of less than 100 nm up to more than 100 μm. In this way, typical feature sizes are covered which occur from the package level via solder bumps or copper pillars down to small Cu/ULK interconnect structures. The experimental approaches are based on nanoindentation with lateral force detection and in-situ scanning probe microscopy (SPM) imaging capabilities, and they include a novel technique named bump assisted BEOL stability indentation (BABSI) test. Especially, the interrelation between small-scale mechanical properties of ULK dielectric films and stresses acting on larger scales are quantitatively assessed by means of the experimental approaches described here.

  4. The Thermomagnetic Instability in Superconducting Films with Adjacent Metal Layer

    NASA Astrophysics Data System (ADS)

    Vestgården, J. I.; Galperin, Y. M.; Johansen, T. H.

    2013-12-01

    Dendritic flux avalanches is a frequently encountered consequence of the thermomagnetic instability in type-II superconducting films. The avalanches, which are potentially harmful for superconductor-based devices, can be suppressed by an adjacent normal metal layer, even when the two layers are not in thermal contact. The suppression of the avalanches in this case is due to so-called magnetic braking, caused by eddy currents generated in the metal layer by propagating magnetic flux. We develop a theory of magnetic braking by analyzing coupled electrodynamics and heat flow in a superconductor-normal metal bilayer. The equations are solved by linearization and by numerical simulation of the avalanche dynamics. We find that in an uncoated superconductor, even a uniform thermomagnetic instability can develop into a dendritic flux avalanche. The mechanism is that a small non-uniformity caused by the electromagnetic non-locality induces a flux-flow hot spot at a random position. The hot spot quickly develops into a finger, which at high speeds penetrates into the superconductor, forming a branching structure. Magnetic braking slows the avalanches, and if the normal metal conductivity is sufficiently high, it can suppress the formation of the dendritic structure. During avalanches, the braking by the normal metal layer prevents the temperature from exceeding the transition temperature of the superconductor. Analytical criteria for the instability threshold are developed using the linear stability analysis. The criteria are found to match quantitatively the instability onsets obtained in simulations.

  5. Divergent layer topologies in divalent metal aliphatic dicarboxylate coordination polymers containing 3-pyridylmethylnicotinamide

    NASA Astrophysics Data System (ADS)

    White, Charmaine L.; Torres Salgado, Maria D.; Mizzi, Jessica E.; LaDuca, Robert L.

    2015-12-01

    Hydrothermal reaction of the requisite metal salt, an aliphatic dicarboxylic acid, and the hydrogen-bonding capable dipyridylamide ligand 3-pyridylmethylnicotinamide (3-pmna) resulted in four coordination polymers whose connectedness and layer topology depend on the metal coordination environment and dicarboxylate binding mode. These new crystalline phases were characterized by single crystal X-ray diffraction. [Cu(ox)(3-pmna)]n (1, ox = oxalate) manifests stacked 3-connected (6,3) herringbone layer motifs. {[Cd(mal)(3-pmna)(H2O)]·3H2O}n (2, mal = malonate) shows a 4-connected (4,4) grid topology with entrained water molecule trimeric chains in the interlamellar regions. {[Cd2(suc)2(3-pmna)(H2O)2]·3H2O}n (3, suc = succinate) possesses {Cd2O2} dimer-based [Cd(suc)]n layers pillared by 3-pmna ligands into a 5-connected sandwich motif with 4862 topology. {[Cd(glu)(3-pmna)(H2O)]·3H2O}n (4, glu = glutarate) manifests a rippled (4,4) grid topology. Luminescent behavior in the cadmium complexes is ascribed to intra-ligand molecular orbital transitions. Thermal decomposition behavior is also discussed herein.

  6. Contacts and transport characteristics of few-layer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Wang, Junjie; Li, Jing; Shevrin, Jacob; Nguyen, An; Mallouk, Tom; Zhu, J.; Rhodes, Daniel; Balicas, Luis; Watanabe, K.; Taniguchi, T.

    2014-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) are potentially useful for electronic and optoelectronic applications. However, the lack of reliable methods to make ohmic contacts has been a major challenge. This work addresses two aspects of this challenge, i.e. interface cleanness and conductivity of the material in the contact area. Using gentle Ar ion milling immediately before the deposition of metal electrodes, we can completely remove polymer residue from prior lithography without significantly damaging the few-layer TMD sheet. Gate stacks made of Au and HfO2 films can inject carriers up to 3 ×1013 cm-2. We make van der Pauw devices of few-layer (< 5 L) TMD (MoS2, WS2, WSe2) sheets using Ti/Au contacts with area < 2 (um)2 and observe contact resistance less than 10 k Ω at high carrier densities, where the sheet conductance is well above 2e2/h. We eliminate hysteresis in the transfer curve of TMD devices by pulsing the gate voltage. Ambipolar conduction is observed in WSe2 devices, with an on/off ratio exceeding 106 for both electrons and holes. WSe2 devices supported on h-BN show field-effect (hole) mobility > 100 cm2/(Vs) at 300K. We discuss the effects of the various approaches taken above.

  7. Chromospheric, transition layer and coronal emission of metal deficient stars

    NASA Technical Reports Server (NTRS)

    Boehm-Vitense, E.

    1982-01-01

    It is shown that while MgII k line emission decreases for metal deficient stars, the Ly alpha emission increases. The sum of chromospheric hydrogen and metallic emission appears to be independent of metal abundances. The total chromospheric energy loss is estimated to be 0.0004 F sub bol. The chromospheric energy input does not seem to decrease for increasing age. The transition layer emission is reduced for metal deficient stars, but it is not known whether the reduction is larger than can be explained by curve of growth effects only. Coronal X-ray emission was measured for 4 metal deficient stars. Within a 12 limit it could still be consistent with the emission of solar abundance stars.

  8. Growth of transition metals on cerium tungstate model catalyst layers.

    PubMed

    Skála, T; Tsud, N; Stetsovych, V; Mysliveček, J; Matolín, V

    2016-10-01

    Two model catalytic metal/oxide systems were investigated by photoelectron spectroscopy and scanning tunneling microscopy. The mixed-oxide support was a cerium tungstate epitaxial thin layer grown in situ on the W(1 1 0) single crystal. Active particles consisted of palladium and platinum 3D islands deposited on the tungstate surface at 300 K. Both metals were found to interact weakly with the oxide support and the original chemical state of both support and metals was mostly preserved. Electronic and morphological changes are discussed during the metal growth and after post-annealing at temperatures up to 700 K. Partial transition-metal coalescence and self-cleaning from the CO and carbon impurities were observed. PMID:27494195

  9. Nb1.30Cr0.70S5: a layered ternary mixed-metal sulfide

    PubMed Central

    Yun, Hoseop; Kim, Gangbeom

    2009-01-01

    The new layered ternary sulfide, Nb1.30Cr0.70S5, niobium chromium penta­sulfide, is isostructural with the solid solution Nb1+xV1−xS5 and belongs to the FeNb3Se10 structure type. Each layer is composed of two unique chains of face-sharing [NbS8] bicapped trigonal prisms (m symmetry) and edge-sharing [MS6] (M= Nb, Cr) octa­hedra (m symmetry). One of the two metal sites is occupied by statistically disordered Nb and Cr atoms, with 0.3 and 0.7 occupancy, respectively. The chains are connected along the c axis, forming two-dimensional layers, which then stack on top of each other to complete the three dimensional structure. As a result, an undulating van der Waals gap is found between the layers. PMID:21581463

  10. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  11. Monolayer and/or few-layer graphene on metal or metal-coated substrates

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2015-04-14

    Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.

  12. Optimum Interfacial Layers For Fiber/Metal Composites

    NASA Technical Reports Server (NTRS)

    Lerch, Bradley A.; Ghosn, Louis J.

    1993-01-01

    Report presents theoretical stress-analysis study of some of factors affecting choice of thin layer of material placed at interface between each fiber and matrix of ceramic-fiber/metal-matrix composite. Effects of thickness, modulus of elasticity, and coefficient of thermal expansion considered.

  13. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  14. Advanced optical interference filters based on metal and dielectric layers.

    PubMed

    Begou, Thomas; Lemarchand, Fabien; Lumeau, Julien

    2016-09-01

    In this paper, we investigate the design and the fabrication of an advanced optical interference filter based on metal and dielectric layers. This filter respects the specifications of the 2016 OIC manufacturing problem contest. We study and present all the challenges and solutions that allowed achieving a low deviation between the fabricated prototype and the target. PMID:27607695

  15. Asymmetric Flexible Supercapacitor Stack

    PubMed Central

    2008-01-01

    Electrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs) have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm) based AB3alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM and HRTEM). An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion®membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  16. Exfoliation of large-area transition metal chalcogenide single layers

    PubMed Central

    Magda, Gábor Zsolt; Pető, János; Dobrik, Gergely; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2015-01-01

    Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically < 10 μm) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS2 single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS2 crystal. Moreover, we found that our exfoliation process is not specific to MoS2, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides. PMID:26443185

  17. The evaluation of stack metal emissions from hazardous waste incinerators: Assessing human exposure through noninhalation pathways

    SciTech Connect

    Sedman, R.M.; Polisini, J.M.; Esparza, J.R.

    1994-06-01

    Potential public health effects associated with exposure to metal emissions from hazardous waste incinerators through noninhalation pathways were evaluated. Instead of relying on modeling the movement of toxicants through various environmental media, an approach based on estimating changes from baseline levels of exposure was employed. Changes in soil and water As, Cd, Hg, Pb, Cr, and Be concentrations that result from incinerator emissions were first determined. Estimates of changes in human exposure due to direct contact with shallow soil or the ingestion of surface water were then ascertained. Projected changes in dietary intakes of metals due to incinerator emissions were estimated based on changes from baseline dietary intakes that are monitored in U.S. Food and Drug Administration total diet studies. Changes from baseline intake were deemed to be proportional to the projected changes in soil or surface water metal concentrations. Human exposure to metals emitted from nine hazardous waste incinerators were then evaluated. Metal emissions from certain facilities resulted in tangible human exposure through noninhalation pathways. However, the analysis indicated that the deposition of metals from ambient air would result in substantially greater human exposure through noninhalation pathways than the emissions from most of the facilities. 51 refs., 1 fig., 6 tabs.

  18. The evaluation of stack metal emissions from hazardous waste incinerators: assessing human exposure through noninhalation pathways.

    PubMed Central

    Sedman, R M; Polisini, J M; Esparza, J R

    1994-01-01

    Potential public health effects associated with exposure to metal emissions from hazardous waste incinerators through noninhalation pathways were evaluated. Instead of relying on modeling the movement of toxicants through various environmental media, an approach based on estimating changes from baseline levels of exposure was employed. Changes in soil and water As, Cd, Hg, Pb, Cr, and Be concentrations that result from incinerator emissions were first determined. Estimates of changes in human exposure due to direct contact with shallow soil or the ingestion of surface water were then ascertained. Projected changes in dietary intakes of metals due to incinerator emissions were estimated based on changes from baseline dietary intakes that are monitored in U.S. Food and Drug Administration total diet studies. Changes from baseline intake were deemed to be proportional to the projected changes in soil or surface water metal concentrations. Human exposure to metals emitted from nine hazardous waste incinerators were then evaluated. Metal emissions from certain facilities resulted in tangible human exposure through noninhalation pathways. However, the analysis indicated that the deposition of metals from ambient air would result in substantially greater human exposure through noninhalation pathways than the emissions from most of the facilities. PMID:7925180

  19. Theoretical and Monte Carlo optimization of a stacked three-layer flat-panel x-ray imager for applications in multi-spectral diagnostic medical imaging

    NASA Astrophysics Data System (ADS)

    Lopez Maurino, Sebastian; Badano, Aldo; Cunningham, Ian A.; Karim, Karim S.

    2016-03-01

    We propose a new design of a stacked three-layer flat-panel x-ray detector for dual-energy (DE) imaging. Each layer consists of its own scintillator of individual thickness and an underlying thin-film-transistor-based flat-panel. Three images are obtained simultaneously in the detector during the same x-ray exposure, thereby eliminating any motion artifacts. The detector operation is two-fold: a conventional radiography image can be obtained by combining all three layers' images, while a DE subtraction image can be obtained from the front and back layers' images, where the middle layer acts as a mid-filter that helps achieve spectral separation. We proceed to optimize the detector parameters for two sample imaging tasks that could particularly benefit from this new detector by obtaining the best possible signal to noise ratio per root entrance exposure using well-established theoretical models adapted to fit our new design. These results are compared to a conventional DE temporal subtraction detector and a single-shot DE subtraction detector with a copper mid-filter, both of which underwent the same theoretical optimization. The findings are then validated using advanced Monte Carlo simulations for all optimized detector setups. Given the performance expected from initial results and the recent decrease in price for digital x-ray detectors, the simplicity of the three-layer stacked imager approach appears promising to usher in a new generation of multi-spectral digital x-ray diagnostics.

  20. Comparative study of the synthesis of layered transition metal molybdates

    SciTech Connect

    Mitchell, S.; Gomez-Aviles, A.; Gardner, C.; Jones, W.

    2010-01-15

    Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT{sub 2}(OH)(MoO{sub 4}){sub 2}.H{sub 2}O, where A=NH{sub 4}{sup +}, Na{sup +} or K{sup +}. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products. - Graphical abstract: Mixed metal oxides (MMOs) derived from layered double hydroxide precursors differ in their reactivity on exposure to aqueous molybdate containing solutions. We investigate the influence of the molybdate source, the rehydration pH and the ratio of T/Mo on the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates of general formula AT{sub 2}(OH)(MoO{sub 4}){sub 2}.H{sub 2}O (where A{sup +}=NH{sub 4}{sup +}, K{sup +} or Na{sup +}).

  1. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  2. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    SciTech Connect

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  3. Photoluminescence emission from Alq3 organic layer in metal-Alq3-metal plasmonic structure

    NASA Astrophysics Data System (ADS)

    Huang, Bohr-Ran; Liao, Chung-Chi; Fan, Wan-Ting; Wu, Jin-Han; Chen, Cheng-Chang; Lin, Yi-Ping; Li, Jung-Yu; Chen, Shih-Pu; Ke, Wen-Cheng; Chen, Nai-Chuan

    2014-06-01

    The emission properties of an organic layer embedded in a metal-organic-metal (MOM) structure were investigated. A partially radiative odd-SPW as well as a non-radiative even-SPW modes are supported by hybridization of the SPW modes on the opposite organic/metal interface in the structure. Because of the competition by this radiative SPW, the population of excitons that recombine to form non-radiative SPW should be reduced. This may account for why the photoluminescence intensity of the MOM sample is higher than that of an organic-metal sample even though the MOM sample has an additional metal layer that should intuitively act as a filter.

  4. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2015-04-28

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  5. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  6. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  7. Hydrogen permeation resistant layers for liquid metal reactors

    SciTech Connect

    McGuire, J.C.

    1980-03-01

    Reviewing the literature in the tritium diffusion field one can readily see a wide divergence in results for both the response of permeation rate to pressure, and the effect of oxide layers on total permeation rates. The basic mechanism of protective oxide layers is discussed. Two coatings which are less hydrogen permeable than the best naturally occurring oxide are described. The work described is part of an HEDL-ANL cooperative research program on Tritium Permeation in Liquid Metal Cooled Reactors. This includes permeation work on hydrogen, deuterium, and tritium with the hydrogen-deuterium research leading to the developments presented.

  8. Final Report - Subfreezing Start/Stop Protocol for an Advanced Metallic Open Flowfield Fuel Cell Stack

    SciTech Connect

    Conti, Amedeo

    2010-09-28

    For fuel cells to be commercially viable as powerplants in automotive applications, the ability to survive and start reliably in cold climates (as low as -40C) is a must. Since fuel cells are water-based energy systems, this requirement is a significant technical challenge. Water transport studies are imperative for achieving DOE targets for fuel cell startup time from subfreezing conditions. Stack components must be selected that endure thermal and humidity cycling over the operating range, and operating strategies must be devised that enable the fuel cell to start, i.e. generate power and heat up sufficiently before ice extinguishes the galvanic reactions, and afford evacuation of a sufficient amount of water, using a limited amount of auxiliary power, at shutdown. The objective of the CIRRUS program was to advance the state of the art in fuel cell operability under subfreezing conditions, consistent with requirements for applications involving such conditions (e.g. automotive, forklifts, backup power systems, and APUs) and DOE targets, specifically to: • Demonstrate repeatable achievement of 50% rated power in less than 30 seconds from a -20C start condition, using less than 5 MJ auxiliary energy over the complete start/stop cycle. • Demonstrate unassisted start capability from an initial temperature of -40C.

  9. Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology

    NASA Astrophysics Data System (ADS)

    Ker, Ming-Dou; Hsu, Hsin-Chyh; Peng, Jeng-Jie

    2002-11-01

    A novel ion implantation method for electrostatic discharge protection, often called as ESD implantation, is proposed to significantly improve machine-model (MM) ESD robustness of N-channel metal-oxide semiconductors (NMOS) device in stacked configuration (stacked NMOS). By using this ESD implantation method, the ESD current is discharged far away from the surface channel of NMOS, therefore the stacked NMOS in the mixed-voltage I/O interface can sustain a much higher ESD level, especially under the MM ESD stress. The MM ESD robustness of the stacked NMOS with a device dimension of W/L=300 μm/0.5 μm for each NMOS has been successfully improved from the original 358 V to become 491 V in a 0.25-μm complementary metal-oxide semiconductors (CMOS) process.

  10. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    PubMed Central

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. PMID:26725854