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Sample records for stacked metallic layers

  1. Plasmonic broadband absorber by stacking multiple metallic nanoparticle layers

    NASA Astrophysics Data System (ADS)

    Ji, Ting; Peng, Lining; Zhu, Yuntao; Yang, Fan; Cui, Yanxia; Wu, Xueyan; Liu, Liu; He, Sailing; Zhu, Furong; Hao, Yuying

    2015-04-01

    High efficiency, broadband plasmonic absorbers are constructed based on a stack of alternating metallic nanoparticle layers (MNLs) and SiO2 slabs on top of a reflective Ag substrate. Experimental results show that the stacks with thick MNLs absorb light better than those with thin MNLs when the number of MNL/SiO2 cells (N) is small (e.g., 1 or 2), but the situation gets reversed when N is greater than 3. When the nominal thickness of MNL is as thin as 5 nm, the acquired Ag nanoparticles are so small that light penetration through all of the stacked MNLs in the proposed design is possible. Thus, an increase in N leads to a growing number of light trapping elements. Our simulation reveals that the Ag nanoparticles at different layers are hybridized to excite rich localized plasmonic resonances, resulting in multiple absorption peaks at optical frequencies and thus a broader absorption band. The broadband absorbers with an integrated absorption efficiency of 96% over the 300-1100 nm wavelength range were achieved by stacking 18 MNL/SiO2 cells. The proposed absorbers can be used for applications in solar energy harvesting and thermal emission tailoring, due to their easy fabrication procedure and excellent optical properties.

  2. Low-frequency Raman modes as fingerprints of layer stacking configurations of transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Liang, Liangbo; Puretzky, Alexander; Sumpter, Bobby; Meunier, Vincent; Geohegan, David; David B. Geohegan Team; Vincent Meunier Team

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) can be used to determine the exact atomic registration between different layers in few-layer 2D stacks; however, fast and relatively inexpensive optical characterization techniques are essential for rapid development of the field. Using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low-frequency (LF) Raman modes (<50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations [Puretzky and Liang et al, ACS Nano 2015, 9, 6333]. First-principles Raman calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries. Our combined experimental/theoretical work demonstrates the LF Raman modes potentially more effective than HF Raman modes to probe the layer stacking and interlayer interaction for 2D materials. The authors acknowledge support from Eugene P. Wigner Fellowship at the Oak Ridge National Laboratory and the Center for Nanophase Materials Sciences, a DOE Office of Science User Facility.

  3. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    SciTech Connect

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G.; Meunier, Vincent; Geohegan, David B.

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.

  4. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    DOE PAGESBeta

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G.; Meunier, Vincent; et al

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) thatmore » originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.« less

  5. Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations.

    PubMed

    Puretzky, Alexander A; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G; Meunier, Vincent; Geohegan, David B

    2015-06-23

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm(-1)) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries. PMID:25965878

  6. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    NASA Astrophysics Data System (ADS)

    Khalil, M. I.; Atici, O.; Lucotti, A.; Binetti, S.; Le Donne, A.; Magagnin, L.

    2016-08-01

    In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.

  7. 23. Brick coke quencher, brick stack, metal stack to right, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. Brick coke quencher, brick stack, metal stack to right, coke gas pipe to left; in background, BOF building, limestone piles, Levy's Slag Dump. Looking north/northwest - Rouge Steel Company, 3001 Miller Road, Dearborn, MI

  8. The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-08-01

    InGaAs gate stacks comprising the moderate dielectric constant (k) Al2O3 have a significantly lower dispersion in accumulation in comparison to stacks with the high-k HfO2 of the same physical thickness. As a result, a HfO2/Al2O3 bi-layer structure seems attractive in terms of both high effective dielectric constant and low dispersion in accumulation. The influence of Al2O3 thickness on the dispersion was investigated in metal/HfO2/Al2O3/InGaAs gate stacks with a fixed overall dielectric thickness. An effective suppression of the dispersion with the increase of the Al2O3 thickness was observed. However, the Al2O3 thickness required for passivation of the dispersion in accumulation was significantly higher in comparison to both the border traps related tunneling distance in Al2O3 and the minimal thickness required for the Al2O3/InGaAs band offset stabilization. The phenomenon can be explained by the lower dielectric constant of Al2O3 film (compared to the subsequently deposited HfO2 layer), where Al2O3 dielectric constant dependence on the film thickness enhances the dispersion intensity. As a result, the guidelines for the passivation layer engineering are: maximization of both majority carriers band offsets and of the dielectric constant of the passivation layer.

  9. Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacks

    SciTech Connect

    Raasch, D.; Mathieu, C.

    1997-08-01

    The room-temperature wall energy {sigma}{sub w}=4.0{times}10{sup {minus}3}J/m{sup 2} of an exchange-coupled Tb{sub 19.6}Fe{sub 74.7}Co{sub 5.7}/Dy{sub 28.5}Fe{sub 43.2}Co{sub 28.3} double layer stack can be reduced by introducing a soft magnetic intermediate layer in between both layers exhibiting a significantly smaller anisotropy compared to Tb{endash}FeCo and Dy{endash}FeCo. {sigma}{sub w} will decrease linearly with increasing intermediate layer thickness, d{sub IL}, until the wall is completely located within the intermediate layer for d{sub IL}{ge}d{sub w}, where d{sub w} denotes the wall thickness. Thus, d{sub w} can be obtained from the plot {sigma}{sub w} versus d{sub IL}. We determined {sigma}{sub w} and d{sub w} on Gd{endash}FeCo intermediate layers with different anisotropy behavior (perpendicular and in-plane easy axis) and compared the results with data obtained from Brillouin light-scattering measurements, where exchange stiffness, A, and uniaxial anisotropy, K{sub u}, could be determined. With the knowledge of A and K{sub u}, wall energy and thickness were calculated and showed an excellent agreement with the magnetic measurements. A ten times smaller perpendicular anisotropy of Gd{sub 28.1}Fe{sub 71.9} in comparison to Tb{endash}FeCo and Dy{endash}FeCo resulted in a much smaller {sigma}{sub w}=1.1{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=24nm at 300 K. A Gd{sub 34.1}Fe{sub 61.4}Co{sub 4.5} with in-plane anisotropy at room temperature showed a further reduced {sigma}{sub w}=0.3{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=17nm. The smaller wall energy was a result of a different wall structure compared to perpendicular layers. {copyright} {ital 1997 American Institute of Physics.}

  10. An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

    NASA Astrophysics Data System (ADS)

    Xueli, Ma; Hong, Yang; Wenwu, Wang; Huaxiang, Yin; Huilong, Zhu; Chao, Zhao; Dapeng, Chen; Tianchun, Ye

    2014-09-01

    We evaluated the TiN/TaN/TiAl triple-layer to modulate the effective work function (EWF) of a metal gate stack for the n-type metal-oxide-semiconductor (NMOS) devices application by varying the TiN/TaN thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and TaN. The thinner TiN and/or thinner in situ TaN capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ TaN capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and TaN thickness are proposed. The thicker TiN prevents the Al diffusion then induces the EWF to shift to mid-gap. However, the TaN plays a different role in effective work function tuning from TiN, due to the Ta—O dipoles formed at the interface between the metal gate and the high-k layer.

  11. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects.

    PubMed

    O'Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N; Duesberg, Georg S

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. PMID:26766208

  12. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

    NASA Astrophysics Data System (ADS)

    O'Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N.; Duesberg, Georg S.

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum.

  13. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

    PubMed Central

    O’Brien, Maria; McEvoy, Niall; Hanlon, Damien; Hallam, Toby; Coleman, Jonathan N.; Duesberg, Georg S.

    2016-01-01

    Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major stepping stone in fundamental understanding of layered materials as mapping the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. PMID:26766208

  14. Van der Waals stacked 2D layered materials for optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Wang, Qixing; Chen, Yu; Wang, Zhuo; Wee, Andrew T. S.

    2016-06-01

    The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

  15. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices. PMID:26768020

  16. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    SciTech Connect

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  17. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks

    NASA Astrophysics Data System (ADS)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin

    2015-07-01

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO2 layer to the nano-stack of Al2O3/ZrO2. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to -75 ppm/V2 with increasing the thickness of SiO2 from zero to 4 nm, which is more powerful than increasing the thickness of ZrO2 in the Al2O3/ZrO2 stack. This is attributed to counteraction between the positive α for Al2O3/ZrO2 and the negative one for SiO2 in the MIM capacitors with Al2O3/ZrO2/SiO2 stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO2 obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO2, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  18. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Yuzheng; Robertson, John

    2016-06-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  19. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  20. Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

    PubMed Central

    El Mel, Abdel-Aziz; Duvail, Jean-Luc; Gautron, Eric; Xu, Wei; Choi, Chang-Hwan; Angleraud, Benoit; Granier, Agnès

    2012-01-01

    Summary We report on the synthesis and magnetic characterization of ultralong (1 cm) arrays of highly ordered coaxial nanowires with nickel cores and graphene stacking shells (also known as metal-filled carbon nanotubes). Carbon-containing nickel nanowires are first grown on a nanograted surface by magnetron sputtering. Then, a post-annealing treatment favors the metal-catalyzed crystallization of carbon into stacked graphene layers rolled around the nickel cores. The observed uniaxial magnetic anisotropy field oriented along the nanowire axis is an indication that the shape anisotropy dominates the dipolar coupling between the wires. We further show that the thermal treatment induces a decrease in the coercivity of the nanowire arrays. This reflects an enhancement of the quality of the nickel nanowires after annealing attributed to a decrease of the roughness of the nickel surface and to a reduction of the defect density. This new type of graphene–ferromagnetic-metal nanowire appears to be an interesting building block for spintronic applications. PMID:23365798

  1. Imaging Stacking Order in Few-Layer Graphene

    SciTech Connect

    C Lui; Z Li; Z Chen; P Klimov; L Brus; T Heinz

    2011-12-31

    Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene. We find that 15% of exfoliated graphene tri- and tetralayers is composed of micrometer-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding 800 C.

  2. AA-stacked bilayer square ice between graphene layers

    NASA Astrophysics Data System (ADS)

    Sobrino Fernandez Mario, M.; Neek-Amal, M.; Peeters, F. M.

    2015-12-01

    Water confined between two graphene layers with a separation of a few Å forms a layered two-dimensional ice structure. Using large scale molecular dynamics simulations with the adoptable ReaxFF interatomic potential we found that flat monolayer ice with a rhombic-square structure nucleates between the graphene layers which is nonpolar and nonferroelectric. We provide different energetic considerations and H-bonding results that explain the interlayer and intralayer properties of two-dimensional ice. The controversial AA stacking found experimentally [Algara-Siller et al., Nature (London) 519, 443 (2015), 10.1038/nature14295] is consistent with our minimum-energy crystal structure of bilayer ice. Furthermore, we predict that an odd number of layers of ice has the same lattice structure as monolayer ice, while an even number of ice layers exhibits the square ice AA stacking of bilayer ice.

  3. Tests on Double Layer Metalization

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1983-01-01

    28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.

  4. Multiple layer identification label using stacked identification symbols

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F. (Inventor)

    2005-01-01

    An automatic identification system and method are provided which employ a machine readable multiple layer label. The label has a plurality of machine readable marking layers stacked one upon another. Each of the marking layers encodes an identification symbol detectable using one or more sensing technologies. The various marking layers may comprise the same marking material or each marking layer may comprise a different medium having characteristics detectable by a different sensing technology. These sensing technologies include x-ray, radar, capacitance, thermal, magnetic and ultrasonic. A complete symbol may be encoded within each marking layer or a symbol may be segmented into fragments which are then divided within a single marking layer or encoded across multiple marking layers.

  5. Determination of the stacking order of curved few-layered graphene systems

    NASA Astrophysics Data System (ADS)

    Hayashi, Takuya; MuramatsuCurrent Affiliation: Department Of Materials Science; Technology, Nagaoka University Of Technology, 1603-1, Kamitomioka, Nagaoka, 940-2188, Japan, Hiroyuki; ShimamotoCurrent Affiliation: Advanced Manufacturing Research Institute, Aist, 2266-98 Anagahora, Shimoshidami, Moriyama-Ku, Nagoya 463-8560, Japan, Daisuke; Fujisawa, Kazunori; Tojo, Tomohiro; Muramoto, Yoshitaka; Yokomae, Takuya; Asaoka, Toru; Kim, Yoong Ahm; Terrones, Mauricio; Endo, Morinobu

    2012-09-01

    We report a facile method to efficiently visualize the atomic carbon network of curved few-layered graphitic systems including folded bi-layer graphene, nanoribbon edges and multi-walled carbon nanotubes (straight and bent), via the processing of aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM) images. This technique is also able to atomically resolve the structure of overlapping graphene layers with different orientations, thus enabling us to determine the stacking order of multiple graphene layers. To the best of our knowledge, we are the first to identify the stacking order of a misoriented 4-layer closed-edge graphene and a metal-semiconductor double-walled carbon nanotube junction.

  6. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Bhartiya, S.; Gupta, M.; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    We report on the dimensional crossover of electron weak localization in ZnO/TiOx stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiOx on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ˜6-65 nm by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R⊙) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R⊙(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R⊙ and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiOx stacked layers which have potential applications in the field of transparent oxide electronics.

  7. Stacking dependent electronic structures of transition metal dichalcogenides heterobilayer

    NASA Astrophysics Data System (ADS)

    Lee, Yea-Lee; Park, Cheol-Hwan; Ihm, Jisoon

    The systematic study of the electronic structures and optical properties of the transition metal dichalcogenides (TMD) heterobilayers can significantly improve the designing of new electronic and optoelectronic devices. Here, we theoretically study the electronic structures and optical properties of TMD heterobilayers using the first-principles methods. The band structures of TMD heterobilayer are shown to be determined by the band alignments of the each layer, the weak interlayer interactions, and angle dependent stacking patterns. The photoluminescence spectra are investigated using the calculated band structures, and the optical absorption spectra are examined by the GW approximations including the electron-hole interaction through the solution of the Bethe-Salpeter equation. It is expected that the weak interlayer interaction gives rise to the substantial interlayer optical transition which will be corresponding to the interlayer exciton.

  8. Stacking faults in a layered cobalt tellurium phosphate oxochloride

    NASA Astrophysics Data System (ADS)

    Zimmermann, Iwan; Johnsson, Mats

    2015-02-01

    The new compound Co2Te3(PO4)O6Cl was synthesized by chemical reactions in a sealed and evacuated silica tube. The crystal structure was solved from single crystal diffraction data and is made up by charge neutral layers. Within the layers two types of chains are made up by edge sharing [CoO6] and [CoO5Cl] polyhedra respectively. The chains are separated by tellurium oxide and phosphate building blocks. There are only weak Van der Waals interactions in between the layers and severe diffuse scattering is observed due to faulted stacking of the layers. Structure solutions in a P-1 triclinic cell and a larger monoclinic cell in P21/c are discussed and compared to a computer generated model. The reasons for the stacking faults may be due to that there are two positions available for each layer that results in similar connectivity to the next layer in addition to the relatively wide channels in between the layers that reduce the Van der Waals interactions in between them.

  9. Stacking fault and twinning in nanocrystalline metals.

    SciTech Connect

    Liao, Xiaozhou; Zhao, Y.; Srivilliputhur, S. G.; Zhou, F.; Lavernia, E. J.; Baskes, M. I.; Zhu, Y. T.; Xu, H. F.

    2004-01-01

    Nanocrystalline Al processed by cryogenic ball-milling and nanocrystalline Cu processed by high-pressure torsion at a very low strain rate and at room temperature were investigated using high-resolution transmission electron microscopy. For nanocrystalline Al, we observed partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults and twinning. We also observed deformation twins formed via two other mechanisms recently predicted by molecular dynamic simulations. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high stacking fault energy. For nanocrystalline Cu, we found that twinning becomes a major deformation mechanism, which contrasts with the literature reports that deformation twinning in coarse-grained Cu occurs only under high strain rate and/or low temperature conditions and that reducing grain sizes suppresses deformation twinning. The investigation of the twinning morphology suggests that twins and stacking faults in nanocrystalline Cu were formed through partial dislocation emissions from grain boundaries. This mechanism differs from the pole mechanism operating in coarse-grained Cu.

  10. A microcasted PDMS vacuum pad and its application for stacking thin ceramic layers

    NASA Astrophysics Data System (ADS)

    Hwang, Sung Jin; Lee, Sang Min; Jung, Im Deok; Jung, Phill Gu; Go, Jeung Sang; Ko, Jong Soo

    2009-08-01

    A PDMS vacuum pad for stacking very thin green sheets with a 3 µm thick dielectric layer is introduced and fabricated. Its applicability for producing multi-layer ceramic capacitors (MLCCs) is evaluated. Five micro-holes with a diameter and depth of 70 µm are formed on a single vacuum-line unit that is of 120 µm width, 100 µm depth and 2 mm length. Each vacuum-line unit with five micro-holes is deployed at 6 mm intervals on a PDMS vacuum pad of size 166 mm × 166 mm. To fabricate the PDMS vacuum pads, a mold with an obverse structure to that of the PDMS vacuum pad is needed. The metal mold has a two-stage nickel microstructure, the first stage for forming the vacuum lines and the second stage for forming the micro-holes. To fabricate the mold, micromachining processes, including photolithography, nickel/copper electroforming and chemical mechanical polishing, were conducted twice on a precision-machined SUS substrate with a size of 210 mm × 210 mm. The PDMS vacuum pads were fabricated through a microcasting process. Using the PDMS vacuum pad, 320 layers of green sheets, upon which nickel electrodes were patterned on 3 µm thick dielectric layers, were consecutively stacked. It has been observed that the stacked green sheets were very flat and uniform without any distortion or wrinkles. It is believed that the uniform stacking will greatly help to improve the production yield as well as enhance the reliability of MLCCs.

  11. Enforced Layer-by-Layer Stacking of Energetic Salts towards High-Performance Insensitive Energetic Materials.

    PubMed

    Zhang, Jiaheng; Mitchell, Lauren A; Parrish, Damon A; Shreeve, Jean'ne M

    2015-08-26

    Development of modern high-performance insensitive energetic materials is significant because of the increasing demands for both military and civilian applications. Here we propose a rapid and facile strategy called the "layer hydrogen bonding pairing approach" to organize energetic molecules via layer-by-layer stacking, which grants access to tunable energetic materials with targeted properties. Using this strategy, an unusual energetic salt, hydroxylammonium 4-amino-furazan-3-yl-tetrazol-1-olate, with good detonation performances and excellent sensitivities, was designed, synthesized, and fully characterized. In addition, the expected unique layer-by-layer structure with a high crystal packing coefficient was confirmed by single-crystal X-ray crystallography. Calculations indicate that the layer-stacking structure of this material can absorb the mechanical stimuli-induced kinetic energy by converting it to layer sliding, which results in low sensitivity. PMID:26262555

  12. Stack of Layers at 'Payson' in Meridiani Planum

    NASA Technical Reports Server (NTRS)

    2006-01-01

    The stack of fine layers exposed at a ledge called 'Payson' on the western edge of 'Erebus Crater' in Mars' Meridiani Planum shows a diverse range of primary and secondary sedimentary textures formed billions of years ago. These structures likely result from an interplay between windblown and water-involved processes.

    The panoramic camera (Pancam) on NASA's Mars Exploration Rover Opportunity acquired the exposures for this image on the rover's 749th Martian day (March 3, 2006) This view is an approximately true-color rendering mathematically generated from separate images taken through all of the left Pancam's 432-nanometer to 753-nanometer filters.

  13. Nonlinear pulse propagation in one-dimensional metal-dielectric multilayer stacks: ultrawide bandwidth optical limiting.

    PubMed

    Scalora, Michael; Mattiucci, Nadia; D'Aguanno, Giuseppe; Larciprete, MariaCristina; Bloemer, Mark J

    2006-01-01

    We numerically study the nonlinear optical properties of metal-dielectric photonic band gap structures in the pulsed regime. We exploit the high chi3 of copper metal to induce nonlinear effects such as broadband optical limiting, self-phase modulation, and unusual spectral narrowing of high intensity pulses. We show that in a single pass through a typical, chirped multilayer stack nonlinear transmittance and peak powers can be reduced by nearly two orders of magnitude compared to low light intensity levels across the entire visible range. Chirping dielectric layer thickness dramatically improves the linear transmittance through the stack and achieves large fields inside the copper to access the large nonlinearity. At the same time, the linear properties of the stack block most of the remaining electromagnetic spectrum. PMID:16486291

  14. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    PubMed Central

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  15. Metal deposition using seed layers

    DOEpatents

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  16. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

    PubMed Central

    2014-01-01

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (Dit) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower Dit. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property. PMID:25246869

  17. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    NASA Technical Reports Server (NTRS)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  18. Effect of vacancy defects on generalized stacking fault energy of fcc metals.

    PubMed

    Asadi, Ebrahim; Zaeem, Mohsen Asle; Moitra, Amitava; Tschopp, Mark A

    2014-03-19

    Molecular dynamics (MD) and density functional theory (DFT) studies were performed to investigate the influence of vacancy defects on generalized stacking fault (GSF) energy of fcc metals. MEAM and EAM potentials were used for MD simulations, and DFT calculations were performed to test the accuracy of different common parameter sets for MEAM and EAM potentials in predicting GSF with different fractions of vacancy defects. Vacancy defects were placed at the stacking fault plane or at nearby atomic layers. The effect of vacancy defects at the stacking fault plane and the plane directly underneath of it was dominant compared to the effect of vacancies at other adjacent planes. The effects of vacancy fraction, the distance between vacancies, and lateral relaxation of atoms on the GSF curves with vacancy defects were investigated. A very similar variation of normalized SFEs with respect to vacancy fractions were observed for Ni and Cu. MEAM potentials qualitatively captured the effect of vacancies on GSF. PMID:24589571

  19. Stacking faults and superstructures in a layered brownmillerite

    PubMed Central

    Krüger, H.; Stöber, S.; Welberry, T. R.; Withers, R. L.; Fitz Gerald, J. D.

    2011-01-01

    Single crystals of Ca4Fe2Mn0.5Ti0.5O9 have been synthesized using a flux method. The structural characterization using single-crystal X-ray diffraction revealed the space group Amma and unit-cell dimensions of a = 5.3510 (6), b = 26.669 (3), c = 5.4914 (6) Å. The structure is isotypic with Sr3NdFe3O9 [Barrier et al. (2005 ▸). Chem. Mater. 17, 6619–6623] and exhibits separated brownmillerite-type layers. One-dimensional diffuse scattering shows that the unit cell is doubled along c by alternating the intra-layer order of tetrahedral chains, causing stacking faults along the b direction. A computer simulation was performed, proving that the observed intensity variations along the diffuse scattering rods originates from two different local structures depending on the configuration of the tetrahedral chains. Selected-area electron diffraction experiments exhibit well ordered regions characterized by satellite reflections corresponding to two different superstructures. Both superstructures can be described using the superspace group A21/m(0βγ)0s, with γ = 0.5 and β ≃ 0.27 or β = 0. PMID:22101537

  20. Health-risk assessment of incinerator stack emissions: Trace metals

    SciTech Connect

    Lee, Jinhong.

    1990-01-01

    The research presented in this dissertation centers on the development of a method for health risk assessment of incinerator stack emissions within the context of multiple exposure pathways and on its application to a problem of contemporary interest. The emphasis is on toxic metal emissions from municipal solid waste (MSW) incinerators. A comparison of the amount of metal emissions shows that toxic metal emissions from MSW incinerators are generally of the same order of magnitude as those from hazardous waste incinerators. A hazard index for stack emitted metals based on toxicity and quantity are developed in this dissertation to screen metals which are important from a risk view-point. From this hazard index, lead and mercury are added to the known carcinogenic metals, i.e., arsenic, beryllium, cadmium, chromium, and nickel as candidates for the assessment. The method presented in this dissertation consists of hazard identification and hazard quantification. If a substance is identified as a potential human carcinogen, the carcinogenicity may be related to the chemical form of a substance and the route of exposure. Regarding the carcinogenic potency of a pollutant, the chemical form of a substance and the route of exposure is investigated. This type of information with regard to carcinogenic uncertainty is incorporated into hazard quantification. The appropriate carcinogenic group of a pollutant is also identified. In order to quantify the human health risks for the 7 metals, the following are determined in this dissertation: emission factors; mass particle-size distributions; air dispersion models; exposure assessment models; population data; and unit risks or cancer potency factors.

  1. A metallic interconnect for a solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    England, Diane Mildred

    A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale

  2. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  3. Energy dissipation in intercalated carbon nanotube forests with metal layers

    NASA Astrophysics Data System (ADS)

    Boddu, Veera M.; Brenner, Matthew W.

    2016-02-01

    Vertically aligned carbon nanotube (CNT) forests were synthesized to study their quasi-static mechanical properties in a layered configuration with metallization. The top and bottom surfaces of CNT forests were metalized with Ag, Fe, and In using paste, sputtering, and thermal evaporation, respectively. Stacks of one, two, and three layers of these forests were assembled and compressed to measure their mechanical properties. The samples were strain limited to 0.7, and the results indicate that energy dissipation is approximately linear with respect to the number of layers and relatively independent of metal type. The energy per unit volume was approximately the same for all samples. Successive stacking of CNT forests reduces local buckling events, which is enhanced with a thick Ag deposition on the CNT forest surface. Young's modulus was also observed to increase as the number of layers was increased. These results are useful in the design of composite materials for high energy absorption and high stiffness applications.

  4. Subwavelength electromagnetic energy transport by stack of metallic nanorings

    NASA Astrophysics Data System (ADS)

    Jafari, M. R.; Ebrahimi, F.; Nooshirvani, M.

    2010-09-01

    In this paper, we consider linear ordered stack of metallic nanorings in the presence of Aharonov-Bohm magnetic flux for externally tunable electromagnetic energy transport below the diffraction limit. Using random phase approximation, we demonstrate that such structure supports propagating surface plasmon modes with negative group velocities and with magnetic flux dependent frequencies. Our results for dispersion relations, bandwidths, and tunabilities of surface plasmon modes give an explicit demonstration that nanoring based subwavelength waveguides are potential candidate for electromagnetic energy transport below the diffraction limit in the terahertz part of spectrum.

  5. Compensation of loss to approach -1 effective index by gain in metal-dielectric stacks

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Jiang, H.; Gralak, B.; Enoch, S.; Tayeb, G.; Lequime, M.

    2009-06-01

    We propose a theoretical study of optimization of metal-dielectric multilayer in order to approach -1 effective refractive index for transverse magnetic waves and a wavelength in the visible. The absorption losses of metal appear to be a crucial factor that affects the effective properties of the multilayer. Taking advantage of the dispersion relation of Bloch modes, we show that the losses not only decrease the transmission of the stack, but also change the negatively refracted angle. Then, we propose that using a gain-providing semiconductor (GaN) may allow compensating for the losses in metal layers. In theory, the performances of the structure can be improved greatly when gain is involved. When considering finite thickness structures, and with appropriate thickness for the terminating layers, it is possible to obtain a high transmission of the structure. A near -1 effective index metal-dielectric stack with high transmission may pave the way to the realization of negative quasi-isotropic refraction in the visible or ultraviolet wavelength range.

  6. Stacking Fault Enriching the Electronic and Transport Properties of Few-Layer Phosphorenes and Black Phosphorus.

    PubMed

    Lei, Shuangying; Wang, Han; Huang, Lan; Sun, Yi-Yang; Zhang, Shengbai

    2016-02-10

    Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named Aδ, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles calculation. With its low formation energy, the Aδ stacking could exist in FLPs and BP as a stacking fault. The presence of the Aδ stacking fault induces a direct to indirect transition of the band gap in FLPs. It also affects the carrier mobilities by significantly increasing the carrier effective masses. More importantly, the Aδ stacking enables the fabrication of a whole spectrum of lateral junctions with all the type-I, II, and III alignments simply through the manipulation of the van der Waals stacking without resorting to any chemical modification. This is achieved by the widely tunable electron affinity and ionization potential of FLPs and BP with the Aδ stacking. PMID:26799596

  7. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    NASA Astrophysics Data System (ADS)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-06-01

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. A step-by-step in situ procedure by deposition of AlOx and hafnium oxide (HfOx) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO2/AlOx/GeOx/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 1011 cm-2eV-1 with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  8. Control of layer stacking in CVD graphene under quasi-static condition.

    PubMed

    Subhedar, Kiran M; Sharma, Indu; Dhakate, Sanjay R

    2015-09-14

    The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking. PMID:26245487

  9. Four-Dimensional Lung Treatment Planning in Layer-Stacking Carbon Ion Beam Treatment: Comparison of Layer-Stacking and Conventional Ungated/Gated Irradiation

    SciTech Connect

    Mori, Shinichiro; Kanematsu, Nobuyuki; Asakura, Hiroshi; Sharp, Gregory C.; Kumagai, Motoki; Dobashi, Suguru; Nakajima, Mio; Yamamoto, Naoyoshi; Kandatsu, Susumu; Baba, Masayuki

    2011-06-01

    Purpose: We compared four-dimensional (4D) layer-stacking and conventional carbon ion beam distribution in the treatment of lung cancer between ungated and gated respiratory strategies using 4DCT data sets. Methods and Materials: Twenty lung patients underwent 4DCT imaging under free-breathing conditions. Using planning target volumes (PTVs) at respective respiratory phases, two types of compensating bolus were designed, a full single respiratory cycle for the ungated strategy and an approximately 30% duty cycle for the exhalation-gated strategy. Beams were delivered to the PTVs for the ungated and gated strategies, PTV(ungated) and PTV(gated), respectively, which were calculated by combining the respective PTV(Tn)s by layer-stacking and conventional irradiation. Carbon ion beam dose distribution was calculated as a function of respiratory phase by applying a compensating bolus to 4DCT. Accumulated dose distributions were calculated by applying deformable registration. Results: With the ungated strategy, accumulated dose distributions were satisfactorily provided to the PTV, with D95 values for layer-stacking and conventional irradiation of 94.0% and 96.2%, respectively. V20 for the lung and Dmax for the spinal cord were lower with layer-stacking than with conventional irradiation, whereas Dmax for the skin (14.1 GyE) was significantly lower (21.9 GyE). In addition, dose conformation to the GTV/PTV with layer-stacking irradiation was better with the gated than with the ungated strategy. Conclusions: Gated layer-stacking irradiation allows the delivery of a carbon ion beam to a moving target without significant degradation of dose conformity or the development of hot spots.

  10. Mechanism Underlying Stacking-Layer Effect of Dielectric Properties of Multilayer Ceramic Capacitors

    NASA Astrophysics Data System (ADS)

    Yokomizo, Satoshi; Hoshina, Takuya; Takeda, Hiroaki; Taniguchi, Katsuya; Mizuno, Youichi; Chazono, Hirokazu; Tsurumi, Takaaki

    2010-04-01

    The stacking-layer effect in multilayer ceramic capacitors (MLCCs) is a phenomenon in which the dielectric permittivity of dielectric layers increases with increasing number of layers. To elucidate the mechanism underlying this effect, we performed a simulation of residual stress in MLCCs by the finite element method (FEM) as well as dielectric measurements under uniaxial compressive stress. The FEM analysis revealed that tensile stress along the stacking direction was induced in dielectric layers owing to the difference in thermal expansion coefficient between internal electrodes and dielectric layers. The results of dielectric measurements indicated that the shell part in the dielectrics of MLCCs played an important role in the stress dependence of dielectric properties. The mechanism underlying the stacking-layer effect proposed in this study was based on the enhancement of polarization rotations in polar nanoregions in the relaxor by the tensile stress in dielectric layers.

  11. Inter-layered clay stacks in Jurassic shales

    NASA Technical Reports Server (NTRS)

    Pye, K.; Krinsley, D. H.

    1983-01-01

    Scanning electron microscopy in the backscattered electron mode is used together with energy-dispersive X-ray microanalysis to show that Lower Jurassic shales from the North Sea Basin contain large numbers of clay mineral stacks up to 150 microns in size. Polished shale sections are examined to determine the size, shape orientation, textural relationships, and internal compositional variations of the clays. Preliminary evidence that the clay stacks are authigenic, and may have formed at shallow burial depths during early diagenesis, is presented.

  12. Metal Gate (TiN, TiC, TaN) Film Stack Stress

    NASA Astrophysics Data System (ADS)

    Bello, A. F.; Paul, Abhijeet; Kim, Hoon

    2015-10-01

    Successful stress engineering in semiconductor device structures must consider all the contributions to the stress field including those not typically considered for stress, such as work function metal (WFM) gate layers that are used to tune to the desired work function level. These films induce stress especially since they are so close to the channel region. In this study we measure stress from blanket layer films and combinations of TiN, TiC, and TaN deposited on Hf oxide, at thicknesses that are typically used for advanced metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Tungsten (W) deposited on top of the WFM layer stacks is also measured. For combination film stacks, the stress is measured after each deposition step. The induced stress from the WFM is significant, in the range of hundreds of MPa, and varies according to the thickness and processing conditions such as annealing temperature and time, etc. Results from these blanket film measurements were used as a guide for technology computer-aided design (TCAD) modeling of the stress field in FinFET structures with design rules comparable to 10-nm technology. The tensor stress components identify areas of compressive and tensile stress and with a magnitude similar to expected results. The stress field could be used to calculate the FinFET device performance, and in this case an example is provided with the relative improvement in drain current.

  13. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    PubMed

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-01

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise. PMID:27295399

  14. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, C.K.; Lesuer, D.R.

    1995-07-04

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

  15. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, Chol K.; Lesuer, Donald R.

    1995-01-01

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

  16. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES, CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  17. MULTIPLE METALS STACK EMISSION MEASUREMENT METHODOLOGY FOR STATIONARY SOURCES - CURRENT STATUS

    EPA Science Inventory

    Stack emissions of metals from stationary sources are of present interest to the United States Environmental Protection Agency (USEPA), to state and local governments, to industries, and to the public. hen regulations require limitation of metals stack emissions, it follows logic...

  18. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    NASA Astrophysics Data System (ADS)

    Cho, Ikjun; Kim, Beom Joon; Ryu, Sook Won; Cho, Jeong Ho; Cho, Jinhan

    2014-12-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-AuNPs) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-AuNP)1) with a number density of 1.82 × 1012 cm-2, the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four AuNP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔVth) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 106) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.

  19. Ternary metal-rich sulfide with a layered structure

    DOEpatents

    Franzen, Hugo F.; Yao, Xiaoqiang

    1993-08-17

    A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

  20. Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Gupta, Vishakha; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Deshmukh, Mandar

    We present quantum Hall measurements on a high quality encapsulated tri-layer graphene device. Low temperature field effect mobility of this device is around 500,000 cm2/Vs and we see SdH oscillations at a magnetic field as low as 0.3 T. Quantum Hall measurements confirm that the chosen tri layer graphene is Bernal (ABA) stacked. Due to the presence of both mass-less monolayer like Dirac fermions and massive bi-layer like Dirac fermions in Bernal stacked tri-layer graphene, there are Landau level crossings between monolayer and bi-layer bands in quantum Hall regime. Although most of the Landau Level crossings are predominantly present on the electron sides, we also observe signatures of the crossings on the hole side. This behaviour is consistent with the asymmetry of electron and hole in ABA tri-layer graphene. We observe a series of crossings of the spin and valley resolved Landau Levels.

  1. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

    NASA Astrophysics Data System (ADS)

    Winter, R.; Krylov, I.; Cytermann, C.; Tang, K.; Ahn, J.; McIntyre, P. C.; Eizenberg, M.

    2015-08-01

    The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

  2. Stacking Sequence and Layer-Type Changes in Topologically Close-Packed Structures.

    NASA Astrophysics Data System (ADS)

    Pei, Shiyou

    1988-12-01

    Crystal structure changes in several A _3B-type quasi-binary alloy series, involving Fe, Co, Ni, Cu, Pd and Pt as the A-component elements and Ti, V, Zr and Nb as the B-component elements, have been explored experimentally using X-ray and electron diffraction. The aim of this work was to discover various stacking sequence and ordered layer-type changes in close-packed structures. Our experimental data further confirm that the hexagonality of the stacking always increases in these alloy series as either the electron concentration (e/a) of a given alloy, or the size ratio (R_{rm B} /R_{rm A}) between two types of atoms is increased. This trend is consistent with the results observed by earlier workers in similar alloy systems. Interestingly, we also note that these observed trends are independent of the component, either the A- or B-, and of the type of stacking layers, either the triangularly-ordered (T-type) or the rectangularly -ordered (R-type), involved in the substitutional change. In addition, two new paths of stacking sequence changes have been established through our experimental work, namely, 3 to 3 to 2 and 1 to 5 to 2. An Ising model has been explored to discover if the observed stacking sequence changes can be interpreted in terms of interactions between a few adjacent layers. Using these interactions as phenomenological parameters, a stacking stability map was constructed showing the arrangement of predicted ground state phases on a two-dimensional parameter -plane. Comparing this map with the known experimental data, it was found that the position and the extent of phase regions in the derived map are rather similar to several real composition phase diagrams. Therefore, such a map can provide useful information about the stacking sequence changes (e.g., allowed or excluded stacking arrangements for the neighboring phases) to be expected in an actual alloy phase diagrams. In a different approach, a total energy calculation utilizing the linearized

  3. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  4. Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

    PubMed

    Chen, Xianping; Tan, Chunjian; Yang, Qun; Meng, Ruishen; Liang, Qiuhua; Jiang, Junke; Sun, Xiang; Yang, D Q; Ren, Tianling

    2016-06-28

    Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP. PMID:27250915

  5. Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

    SciTech Connect

    Hossain, M.A; Burkhardt, Mark H.; Sarkar, S.; Ohldag, H.; Chuang, Y.-D.; Scholl, A.; Young, A.T.; Doran, A.; Dessau, D.S.; Zheng, H.; Mitchell, J.F.; Durr, H.A.; Stohr, J.

    2012-09-11

    We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

  6. Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers.

    PubMed

    Manh, Tung; Nguyen, Anh-Tuan Thai; Johansen, Tonni F; Hoff, Lars

    2014-02-01

    This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon-polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (110)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5mm long trenches that were subsequently filled with Spurr's epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon-polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, -6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband. PMID:24041498

  7. Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers

    NASA Astrophysics Data System (ADS)

    Plechinger, G.; Mooshammer, F.; Castellanos-Gomez, A.; Steele, G. A.; Schüller, C.; Korn, T.

    2015-09-01

    We perform an optical spectroscopy study to investigate the properties of different artificial MoS2 bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS2 in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscopy, second-harmonic-generation microscopy and photoluminescence measurements allows us to determine the degree of interlayer coupling in our samples. We find that even for electronically decoupled artificial structures, which show the same valley polarization degree as the constituent MoS2 monolayers at low temperatures, there is a resonant energy transfer between individual layers which acts as an effective luminescence quenching mechanism.

  8. Inverse AVO problem for a stack of layers

    NASA Astrophysics Data System (ADS)

    Malovichko, Liliya

    2015-09-01

    The problem of estimating thin layered model parameters by amplitude variation with offset (AVO) inversion has been studied. The motivation was resolving of the thin layers in inverted prestack seismic data as it contains more information on elastic properties of the subsurface than poststack seismic data. In this paper, an algorithm for solving the prestack inverse AVO problem in the case of multilayered media is derived. This algorithm is based on iterative corrections to the parameters of the initial model which tend to minimise the misfits between observed and synthetic seismograms. The synthetic seismograms are calculated using the reflection-transmission (RT)-matrices method, assuming a plane-wave with respect to the source position. A regularised Gauss-type algorithm for the inversion of prestack seismic data has been used. A differential seismogram computation algorithm to characterise the sensitivity of the seismic signal to the variations of a model parameter was used. The derived solution of the inverse problem is constructed in the time domain. This gives a slight advantage because it allows for visual control of the solution process. One can monitor the amplitude reduction of the data residual (difference between observed and synthetic seismograms) during the iteration process. Numerical examples show the accuracy and efficiency of the method.

  9. Large area compatible broadband superabsorber surfaces in the VIS-NIR spectrum utilizing metal-insulator-metal stack and plasmonic nanoparticles.

    PubMed

    Dereshgi, Sina Abedini; Okyay, Ali Kemal

    2016-08-01

    Plasmonically enhanced absorbing structures have been emerging as strong candidates for photovoltaic (PV) devices. We investigate metal-insulator-metal (MIM) structures that are suitable for tuning spectral absorption properties by modifying layer thicknesses. We have utilized gold and silver nanoparticles to form the top metal (M) region, obtained by dewetting process compatible with large area processes. For the middle (I) and bottom (M) layers, different dielectric materials and metals are investigated. Optimum MIM designs are discussed. We experimentally demonstrate less than 10 percent reflection for most of the visible (VIS) and near infrared (NIR) spectrum. In such stacks, computational analysis shows that the bottom metal is responsible for large portion of absorption with a peak of 80 percent at 1000 nm wavelength for chromium case. PMID:27505733

  10. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers.

    PubMed

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C S Suchand; Feng, Yuan Ping; Nijhuis, Christian A; Loh, Kian Ping

    2014-01-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films. PMID:25410480

  11. A novel method of fabricating laminated silicone stack actuators with pre-strained dielectric layers

    NASA Astrophysics Data System (ADS)

    Hinitt, Andrew D.; Conn, Andrew T.

    2014-03-01

    In recent studies, stack based Dielectric Elastomer Actuators (DEAs) have been successfully used in haptic feedback and sensing applications. However, limitations in the fabrication method, and materials used to con- struct stack actuators constrain their force and displacement output per unit volume. This paper focuses on a fabrication process enabling a stacked elastomer actuator to withstand the high tensile forces needed for high power applications, such as mimetics for mammalian muscle contraction (i.e prostheses), whilst requiring low voltage for thickness-mode contractile actuation. Spun elastomer layers are bonded together in a pre-strained state using a conductive adhesive filler, forming a Laminated Inter-Penetrating Network (L-IPN) with repeatable and uniform electrode thickness. The resulting structure utilises the stored strain energy of the dielectric elas- tomer to compress the cured electrode composite material. The method is used to fabricate an L-IPN example, which demonstrated that the bonded L-IPN has high tensile strength normal to the lamination. Additionally, the uniformity and retained dielectric layer pre-strain of the L-IPN are confirmed. The described method is envisaged to be used in a semi-automated assembly of large-scale multi-layer stacks of pre-strained dielectric layers possessing a tensile strength in the range generated by mammalian muscle.

  12. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

    NASA Astrophysics Data System (ADS)

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C. S. Suchand; Feng, Yuan Ping; Nijhuis, Christian A.; Loh, Kian Ping

    2014-11-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  13. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  14. DIRECT DETERMINATION OF THE STACKING ORDER IN GD2O3 EPI LAYERS ON GAAS.

    SciTech Connect

    YACOBY,Y.; SOWWAN,M.; PINDAK,R.; CROSS,J.; WALKO,D.; STERN,E.; PITNEY,J.; MACHARRIE,R.; HONG,M.; CLARKE,R.

    2002-12-06

    We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.

  15. Metal-insulator-metal capacitors' current instability improvement using dielectric stacks to prevent oxygen vacancies formation

    NASA Astrophysics Data System (ADS)

    Manceau, J.-P.; Bruyere, S.; Jeannot, S.; Sylvestre, A.; Gonon, P.

    2007-09-01

    Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

  16. Layer-by-layer paper-stacking nanofibrous membranes to deliver adipose-derived stem cells for bone regeneration

    PubMed Central

    Wan, Wenbing; Zhang, Shiwen; Ge, Liangpeng; Li, Qingtao; Fang, Xingxing; Yuan, Quan; Zhong, Wen; Ouyang, Jun; Xing, Malcolm

    2015-01-01

    Bone tissue engineering through seeding of stem cells in three-dimensional scaffolds has greatly improved bone regeneration technology, which historically has been a constant challenge. In this study, we researched the use of adipose-derived stem cell (ADSC)-laden layer-by-layer paper-stacking polycaprolactone/gelatin electrospinning nanofibrous membranes for bone regeneration. Using this novel paper-stacking method makes oxygen distribution, nutrition, and waste transportation work more efficiently. ADSCs can also secrete multiple growth factors required for osteogenesis. After the characterization of ADSC surface markers CD29, CD90, and CD49d using flow cytometry, we seeded ADSCs on the membranes and found cells differentiated, with significant expression of the osteogenic-related proteins osteopontin, osteocalcin, and osteoprotegerin. During 4 weeks in vitro, the ADSCs cultured on the paper-stacking membranes in the osteogenic medium exhibited the highest osteogenic-related gene expressions. In vivo, the paper-stacking scaffolds were implanted into the rat calvarial defects (5 mm diameter, one defect per parietal bone) for 12 weeks. Investigating with microcomputer tomography, the ADSC-laden paper-stacking membranes showed the most significant bone reconstruction, and from a morphological perspective, this group occupied 90% of the surface area of the defect, produced the highest bone regeneration volume, and showed the highest bone mineral density of 823.06 mg/cm3. From hematoxylin and eosin and Masson staining, the new bone tissue was most evident in the ADSC-laden scaffold group. Using quantitative polymerase chain reaction analysis from collected tissues, we found that the ADSC-laden paper-stacking membrane group presented the highest osteogenic-related gene expressions of osteocalcin, osteopontin, osteoprotegerin, bone sialoprotein, runt-related transcription factor 2, and osterix (two to three times higher than the control group, and 1.5 times higher than

  17. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    NASA Astrophysics Data System (ADS)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  18. Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy

    SciTech Connect

    Lu, Xin; Utama, M. Iqbal Bakti; Lin, Junhao; Luo, Xin; Zhao, Yanyuan; Zhang, Jun; Pantelides, Sokrates T.; Zhou, Wu; Quek, Su Ying; Xiong, Qihua

    2015-07-02

    Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.

  19. Biaxially textured metal substrate with palladium layer

    DOEpatents

    Robbins, William B [Maplewood, MN

    2002-12-31

    Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

  20. Ceramic TBS/porous metal compliant layer

    NASA Technical Reports Server (NTRS)

    Tolokan, Robert P.; Jarrabet, G. P.

    1992-01-01

    Technetics Corporation manufactures metal fiber materials and components used in aerospace applications. Our technology base is fiber metal porous sheet material made from sinter bonded metal fibers. Fiber metals have percent densities (metal content by volume) from 10 to 65 percent. Various topics are covered and include the following: fiber metal materials, compliant layer thermal bayer coatings (TBC's), pad properties, ceramic/pad TBC design, thermal shock rig, fabrication, and applications.

  1. Effect of inhomogeneous microstructure of granular layer on inter granular/inter layer exchange coupling in stacked perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Tham, Kim Kong; Saito, Shin; Hasegawa, Daiji; Itagaki, Norikazu; Hinata, Shintaro; Ishibashi, Shinichi; Takahashi, Migaku

    2012-11-01

    The effect of inhomogeneous microstructure of granular layer on inter granular/inter layer exchange coupling in stacked perpendicular recording media is studied by varying SiO2 content of CoCrPt-SiO2 granular layer. From cross-section and plane-view TEM observation, it can be concluded that each magnetic grain at cap layer (CL) grows on one magnetic grain of granular layer (GL), and inhomogeneous nucleation site at GL leads to inhomogeneous initial growth of continuous layer at CL. This phenomenon leads to the increase of inter granular coupling fluctuation in CL. Evaluation of inter granular coupling between magnetic grains at GL in stacked media with CL deposited directly on GL shows average and fluctuation of exchange coupling constant of around 2.9 erg/cm2 and 0.6 erg/cm2. In order to reduce the inter granular coupling, spacer layer (SL) with Pd material was inserted between GL and CL. As a result, average and fluctuation of exchange coupling constant decrease to 1.4 erg/cm2 and 0.3 erg/cm2 which suggests that by inserting a SL with small ferromagnetic exchange coupling between GL and CL will make it possible to control the inter granular coupling between magnetic grains at GL with CoCrPt-oxide material.

  2. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  3. Impact of the Stack Order in Cu-Zn-Sn Metal Precursors on the Properties of Cu2ZnSnS4 Thin Films

    SciTech Connect

    Abusnina, Mohamed; Matin, Mohammad; Moutinho, Helio; Al-Jassim, Mowafak

    2015-06-14

    Cu2ZnSnS4 (CZTS) thin films were grown by the annealing of metallic precursors with different stack orders in sulfur atmosphere. The sequential deposition of the metal layers from single Cu, Zn, and Sn targets on Mo-coated soda-lime glass substrates was carried out using radio-frequency magnetron sputtering. In this work, we investigated the effect of the sequence of metal layers on the chemical, structural, and morphological properties of the final CZTS films using X-ray fluorescence (XRF), X-ray diffraction (XRD), Raman scattering spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy. The realized stack sequences were Mo/Sn/Zn/Cu, Mo/Sn/Cu/Zn, Mo/Cu/Zn/Sn, Mo/Cu/Sn/Zn, and Mo/Zn/Cu/Sn. XRF measurements revealed notable impact of the metal layers' stacking order in the precursor on the chemical composition. It also showed Sn loss and high Zn concentration in all sulfurized films; however, having Cu on the Sn or Zn/Sn layer showed some minimization of the Sn loss. XRD showed CZTS films with good crystallinity and no evidence of the presence of secondary phases. Changing the precursor stack order did not show any influence on the films' crystallinity or texture. Raman spectroscopy, in contrast, indicated the presence of ZnS phase beside the main CZTS phase. The morphology study showed significant effect on the structure of the final CZTS films depending on the used stack order. Generally, the films that originated from precursors having a Zn layer deposited directly on Mo or as the second layer exhibited better adhesion to the Mo layer and showed fewer or even no voids compared to the other films.

  4. Tunable three-dimensional helically stacked plasmonic layers on nanosphere monolayers.

    PubMed

    He, Yizhuo; Larsen, George K; Ingram, Whitney; Zhao, Yiping

    2014-01-01

    We report a simple and scalable method to fabricate helical chiral plasmonic nanostructures using glancing angle deposition on self-assembled nanosphere monolayers. By controlling the azimuthal rotation of substrates, Ag and SiO2 layers can be helically stacked in left-handed and right-handed fashions to form continuous helices. Finite-difference time-domain simulations confirm the experimental results that show that these plasmonic helices exhibit strong chiroptical responses in the visible to near-IR region, which can be tuned by changing the diameter of nanospheres. With such flexibility in the design, helically stacked plasmonic layers may act as tunable chiral metamaterials, as well as serve as different building blocks for chiral assemblies. PMID:24646023

  5. Microscopic theoretical model study of band gap opening in AA-stacked bi-layer graphene

    NASA Astrophysics Data System (ADS)

    Sahu, Sivabrata; Parashar, S. K. S.; Rout, G. C.

    2016-05-01

    We address here a tight-binding theoretical model calculation for AA-stacked bi-layer graphene taking into account of a biased potential between two layers to study the density of states and the band dispersion within the total Brillouin zone. We have calculated the electronic Green's function for electron operator corresponding to A and B sub lattices by Zubarev's Green's function technique from which the electronic density of states and the electron band energy dispersion are calculated. The numerically computed density of states and band energy dispersions are investigated by tuning the biased potential to exhibit the band gap by varying the different physical parameters.

  6. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    PubMed Central

    Al-Amri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%. PMID:27339612

  7. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    NASA Astrophysics Data System (ADS)

    Al-Amri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He-Hau, Jr.

    2016-06-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  8. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres.

    PubMed

    Al-Amri, Amal M; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%. PMID:27339612

  9. Fabrication of three-dimensional microfluidic systems by stacking molded polydimethylsiloxane (PDMS) layers

    NASA Astrophysics Data System (ADS)

    Jo, Byung-Ho; Beebe, David J.

    1999-08-01

    A new technique to fabricate 3D microchannels using polydimethylsiloxane (PDMS) elastomer material is presented. The process allows for the stacking of many thin (about 100 micrometers thick) patterned PDMS layers to realize complex 3D channel paths. Replica molding method is utilized to generate each layer. The master for each layer is formed on a silicon wafer using SU-8 positive relief photoresist. PDMS is cast against the master producing molded layers containing channels and openings. To realize thin layers with openings, a sandwich molding configuration was developed that allows precise control of the PDMS thickness. The master wafer is clamped within a sandwich that includes flat aluminum plates, a flexible polyester film layer, a rigid Pyrex wafer and a rubber sheet. A parametric study is performed on PDMS surface activation in a reactive ion etching (RIE) system and the subsequent methanol treatment for bonding and aligning very thin individual components to a substrate. Low RF power and short treatment times are better than high RF power and long treatment times respectively for instant bonding. Layer to layer alignment of less than 15 micrometers is achieved with manual alignment techniques that utilize surface tension driven self alignment methods. A coring procedure is used to realize off chip fluidic connections via the bottom PDMS layer, allowing the top layer to remain smooth and flat for complete optical access. After fabricating 3D channel paths, the hydrophobic surfaces of the inside channel walls can be activated (hydrophobic to hydrophilic) an oxygen plasma RIE system.

  10. Size-dependent melting of single and stacked silver alkanethiolate layers: experiment and phenomenological model

    NASA Astrophysics Data System (ADS)

    Ye, Zichao; de La Rama, Lito; Hu, Liang; Efremov, Mikhail; Allen, Leslie

    2015-03-01

    We report a systematic study of melting of silver alkanethiolate (AgSCn) lamellar crystals. A new synthesis method enables us to control their thickness by either modulating alkanethiol chain length (n = 7-18) or stacking them to a specific layer number (m = 1-10). Nanocalorimetry shows stepwise increase in the melting point, Tm, of single layer AgSCn as an increment of chain length. Layer stacking also results in a size-dependent melting. An odd/even alternation is observed in the Tm of 2, 3, and 4-layer lamellae, but absent in that of single and multilayer samples. We develop a phenomenological model for lamellae melting based on the cumulative excess free energy contributions of four spatially separate regions in AgSCn crystal: free surface, Ag -S central plane, substrate interface, and interlayer interface. Surface excess free energy is revealed to be independent of chain length. The selective appearance of the odd/even effect is due to the significant stabilization of interlayer interfaces of odd-chain samples, possibly due to registration/packing. Such interface stabilization occurs most significantly for 2-layer samples. XRD results support the model as the measured van der Waals gap is smaller for crystals with odd chains. Supported by NSF-DMR-1409953 and NSF-DMR-1006385.

  11. A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Ritter, Dan; Eizenberg, Moshe

    2016-02-01

    Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

  12. A general modal approach for the development of optimal multi-layer stacked vibration energy harvesters

    NASA Astrophysics Data System (ADS)

    Xiong, Xingyu; Oyadiji, S. Olutunde

    2014-10-01

    Piezoelectric vibration energy harvesters with multi-layer stacked structures have been developed. They consist of multi-layer beams, of zigzag configurations, with rigid masses attached between the beams. The rigid masses, which also serve as spacers, are attached to each layer to tune the frequencies of the harvester. Close resonance frequencies and considerable power output can be achieved in multiple modes by varying the positions of the masses. A modal approach is introduced to determine the modal performance conveniently using the mass ratio and the modal electromechanical coupling coefficient, and the required modal parameters are derived using the finite element method. Mass ratio represents the influence of modal mechanical behaviour on the power density. Since the modes with larger mass ratios cause the remaining modes to have smaller mass ratios and lower power densities, a screening process using the modal approach is developed to determine the optimal or near-optimal performance of the harvesters when altering mass positions. This procedure obviates the need for full analysis by pre-selecting the harvester configurations with close resonances and favourable values of mass ratio initially. Furthermore, the multi-layer stacked designs using the modal approach can be used to develop harvesters with different sizes with the power ranging from microwatts to milliwatts.

  13. CHARACTERIZATION OF POLED SINGLE-LAYER PZT FOR PIEZO STACK IN FUEL INJECTION SYSTEM

    SciTech Connect

    Wang, Hong; Matsunaga, Tadashi; Lin, Hua-Tay

    2010-01-01

    Poled single-layer PZT has been characterized in as-extracted and as-received states. PZT plate specimens in the former were extracted from a stack. Flexure strength of PZT was evaluated by using ball-on-ring and 4-point bend tests. Fractography showed that intergranular fractures dominated the fracture surface and that volume pores were the primary strength-limiting flaws. The electric field effect was investigated by testing the PZT in open circuit and coercive field levels. An asymmetrical response on the biaxial flexure strength with respect to the electric field direction was observed. These experimental results will assist reliability design of the piezo stack that is being considered in fuel injection system.

  14. Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

    SciTech Connect

    Yamashita, Y.; Yoshikawa, H.; Kobayashi, K.; Chikyo, T.

    2014-01-28

    Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

  15. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    SciTech Connect

    Gevorgyan, A. H.

    2015-12-15

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  16. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.

    2015-12-01

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  17. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

    PubMed Central

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H.; Khondaker, Saiful I.; Choi, Wonbong; Jung, Yeonwoong

    2016-01-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials. PMID:27147503

  18. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    PubMed

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-01-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials. PMID:27147503

  19. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

    NASA Astrophysics Data System (ADS)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H.; Khondaker, Saiful I.; Choi, Wonbong; Jung, Yeonwoong

    2016-05-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  20. Simple solution route to uniform MoS{sub 2} particles with randomly stacked layers

    SciTech Connect

    Li Qing; Li Ming; Chen Zhiqian; Li Chunmei

    2004-06-08

    MoS{sub 2} particles of uniform size (ca. 70 nm) consisting of random and loosely stacked layers have been synthesized from hydrazine solution with (NH{sub 4}){sub 2}Mo{sub 3}S{sub 13} as the precursor at 180 deg. C for 16 h under hydrothermal conditions. The particles were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HREM). The influences of reaction conditions are discussed while a mechanism is proposed to explain the formation of this peculiar morphology.

  1. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    NASA Astrophysics Data System (ADS)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  2. Limitations of H-κ stacking: ambiguous results caused by crustal layering

    NASA Astrophysics Data System (ADS)

    Wölbern, I.; Rümpker, G.

    2016-07-01

    Over the past decade, the H-κ stacking technique of Zhu and Kanamori (J Geophys Res 105:2969-2980, 2000) has become a standard tool to determine the crustal thickness H and the bulk crustal vP/vS ratio κ from teleseismic receiver functions. It is obvious that unfavorable noise conditions as well as a complex 3D velocity structure can severely hamper the interpretation of receiver-function data. However, we observe that ambiguities can even arise from a simple 1D layered velocity structure which raises a high potential for misinterpretations. To analyze the feasibility and basic limitations of the H-κ stacking method, we conduct a series of tests based on synthetic data. The impact of different given elementary parameters, related either to the velocity structure or to the data processing, is evaluated in a series of eight individual tests. We deliberately exclude complications such as 3D structural variations and/or noise to show that even a simple 1D velocity structure, involving, e.g., an additional inter-crustal discontinuity, can have significant consequences for the interpretation of the results. However, our modeling suggests that more complex crustal structures may lead to even less reliable results. Additionally, our tests illustrate that time shifts of the maxima in the H-κ domain due to the superposition and merging of individual phases can lead to significantly overestimated vP/vS ratios. In general, the depth to the Moho (or other discontinuities of interest) is less significantly affected. Our tests indicate the necessity to accurately check delay times derived from the maxima of the H-κ stacks against corresponding phases in the receiver functions. Repeating the stacking with varied weighting factors and filter ranges can help to reduce the ambiguities and to avoid possible misinterpretation.

  3. Progress in MOSFET double-layer metalization

    NASA Technical Reports Server (NTRS)

    Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

    1980-01-01

    Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

  4. Structural Analysis and Direct Imaging of Rotational Stacking Faults in Few-Layer Graphene Synthesized from Solid Botanical Precursor

    NASA Astrophysics Data System (ADS)

    Kalita, Golap; Wakita, Koichi; Umeno, Masayoshi

    2011-07-01

    Here, we report the structural analysis and rotational stacking faults of few-layer graphene sheets derived by the controlled pyrolysis of the solid botanical derivative camphor (C10H16O). The second-order Raman spectra of the sheets show that the graphene layers are more than one single layer, and the numbers of layers can be controlled by adjusting the amount of camphor pyrolyzed. Transmission electron microscopy images show a minimum of 3 layers for thinner graphene sheets and a maximum of 12 layers for thicker graphene sheets. Low-voltage aberration-corrected high-resolution transmission electron microscopy is also carried out to gain insight into the hexagonal structure and stacking of graphene layers. The transmission electron microscopy study showed the presence of moiré patterns with a relative rotation between graphene layers.

  5. Establishing a Calibration for a Microwave Plasma Continuous Emissions Monitor For Stack Exhaust Metals

    NASA Astrophysics Data System (ADS)

    Flores, G. J., III; Green, K. M.; Woskov, P. P.; Hadidi, K.; Thomas, P.

    1998-11-01

    A real-time continuous emissions monitor for hazardous metals in stack exhaust is in development to replace the regulatory standard, EPA Method 29. A microwave plasma is sustained in ambient stack exhaust flow for real-time atomic emission spectroscopy. A metals injection calibration subsystem using a pneumatic nebulizer and standard metals solution is attached to the exhaust flow for real-time span calibration of the monitored metals. A novel approach to determine the nebulizer injection efficiency during plasma operation was tested. A known metal mass on a tungsten filament attached to an alumina rod was introduced into a nitrogen plasma at different axial positions. These signals were then correlated to masses of metals aspirated into the plasma by the nebulizer. The metals injection efficiency as a function of rod insertion position was calculated by dividing the correlated mass by the total mass aspirated by the nebulizer, and extrapolated to the end of the sample line. The resulting efficiency was compared to samples collected directly by Gelman Science Type A/E glass fiber filters off line from the plasma. The results to date give the nebulizer metals injection efficiencies less than one percent.

  6. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

    NASA Astrophysics Data System (ADS)

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Ying Quek, Su

    2015-10-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

  7. Supramolecular self-assembly of graphene oxide and metal nanoparticles into stacked multilayers by means of a multitasking protein ring

    NASA Astrophysics Data System (ADS)

    Ardini, Matteo; Golia, Giordana; Passaretti, Paolo; Cimini, Annamaria; Pitari, Giuseppina; Giansanti, Francesco; Leandro, Luana Di; Ottaviano, Luca; Perrozzi, Francesco; Santucci, Sandro; Morandi, Vittorio; Ortolani, Luca; Christian, Meganne; Treossi, Emanuele; Palermo, Vincenzo; Angelucci, Francesco; Ippoliti, Rodolfo

    2016-03-01

    Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its lumen. This feature is exploited to both capture presynthesized gold nanoparticles and grow in situ palladium nanoparticles paving the way to straightforward and ``green'' routes to 3D reduced GO-metal composite materials.Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its

  8. Double-Layer ULVZ Shear Velocity Structure Imaged With Stacked ScS Data

    NASA Astrophysics Data System (ADS)

    Avants, M.; Lay, T.; Garnero, E.

    2005-12-01

    The ultra-low velocity zone (ULVZ) has been imaged as a thin (5-40 km thick) layer just above the core-mantle boundary (CMB), with P and S velocities reduced by up to 10 and 30%, respectively. Accurate characterization of the ULVZ is important, as it may relate to, for example, the role of the lowermost mantle in Earth's evolution, mantle and outer core convection, the geodynamo, and heat flux into the mantle. A direct measurement of S velocity in the ULVZ, independent of the P-wave velocity, is needed to better constrain ULVZ properties. We establish tangential component ScS data as a new probe of ULVZ shear velocity properties. Lowermost mantle structure beneath the central Pacific is studied using data from 38 deep focus Tonga-Fiji earthquakes, recorded by dense broadband seismic networks in western North America. Our data set consists of 442 instrument-deconvolved displacement seismograms, which are additionally deconvolved by average source-time functions (source wavelets) constructed for each event, in order to equalize the signals and to extend the signal bandwidth to high frequencies. The resulting traces are used in a double-beam stacking approach to enhance the signal-to-noise ratio of any coherent precursory reflections of the wide-angle transverse component ScS data, which should be detectable if ULVZ structure is present beneath our central Pacific study region. Our stacks reveal two distinct ScS precursors, which indicate a double layer ULVZ structure in this region. Both layers show strong lateral variations in shear velocity reduction (dVs) and thickness. The deeper ULVZ layer is well modeled by dVs drops varying from 3.3-7.4% (relative to PREM) with a thickness range of 24-30 km. The overlying layer has dVs reductions from 0.8-2.0% (relative to PREM), and 60-86 km thickness. Thus the imaged 2-layered ULVZ has dVs reductions far milder than previous studies (10-30%), which have argued for a partial melt origin to the ULVZ. Finer subdivisions of data

  9. Localization-length calculations in alternating metamaterial-birefringent disordered layered stacks

    NASA Astrophysics Data System (ADS)

    del Barco, O.; Gasparian, V.; Gevorkian, Zh.

    2015-06-01

    A detailed theoretical and numerical analysis of the localization length in alternating metamaterial-birefringent random layered stacks, under uncorrelated thickness disorder, has been performed. Similar structures have recently been reported to suppress the Brewster delocalization for p -polarized light when "standard" isotropic layers (with a positive index of refraction) are considered instead of metamaterial layers, providing a generic means to produce polarization-insensitive, broadband reflections. However, this enhancement of localization is valid for short wavelengths λ compared to the mean layer thickness a0. At higher wavelengths, we recover the Brewster anomalies for p -polarized states impeding a remarkable localization of light. To achieve a better localization for a wider range of wavelengths, we replaced the conventional isotropic layers by negative-index metamaterials presenting low losses and constant index of refraction over the near-infrared range. As a result, our numerical calculations exhibit a linear dependence of the localization length on λ (in the region 5 <λ /a0<60 ), reducing the Brewster anomalies by more than two orders of magnitude with respect to the standard isotropic scheme at oblique incidence. This enhancement of localization is practically independent of the thickness disorder kind and is also held under weak refractive-index disorder.

  10. Graphitic Tribological Layers in Metal-on-Metal Hip Replacements

    NASA Astrophysics Data System (ADS)

    Liao, Y.; Pourzal, R.; Wimmer, M. A.; Jacobs, J. J.; Fischer, A.; Marks, L. D.

    2011-12-01

    Arthritis is a leading cause of disability, and when nonoperative methods have failed, a prosthetic implant is a cost-effective and clinically successful treatment. Metal-on-metal replacements are an attractive implant technology, a lower-wear alternative to metal-on-polyethylene devices. Relatively little is known about how sliding occurs in these implants, except that proteins play a critical role and that there is a tribological layer on the metal surface. We report evidence for graphitic material in the tribological layer in metal-on-metal hip replacements retrieved from patients. As graphite is a solid lubricant, its presence helps to explain why these components exhibit low wear and suggests methods of improving their performance; simultaneously, this raises the issue of the physiological effects of graphitic wear debris.

  11. Molecular dynamics simulations on deformation and fracture of bi-layer graphene with different stacking pattern under tension

    NASA Astrophysics Data System (ADS)

    Jiao, M. D.; Wang, L.; Wang, C. Y.; Zhang, Q.; Ye, S. Y.; Wang, F. Y.

    2016-02-01

    Based on AIREBO (Adaptive Intermolecular Reactive Empirical Bond Order) potential, molecular dynamics simulations (MDs) are performed to study the mechanical behavior of AB- and AA-stacked bi-layer graphene films (BGFs) under tension. Stress-strain relationship is established and deformation mechanism is investigated via morphology analysis. It is found that AA-stacked BGFs show wavy folds, i.e. the structural instability, and the local structure of AB-stacked BGFs transforms into AA-stacked ones during free relaxation. The values of the Young's modulus obtained for AA-stacked zigzag and armchair BGFs are 797.2 GPa and 727.4 GPa, and those of their AB-stacked counterparts are 646.7 GPa and 603.5 GPa, respectively. In comparison with single-layer graphene, low anisotropy is observed for BGFs, especially AB-stacked ones. During the tensile deformation, hexagonal cells at the edge of BGFs are found to transform into pentagonal rings and the number of such defects increases with the rise of tensile strain.

  12. All-solution-processed inverted organic solar cell with a stacked hole-transporting layer

    NASA Astrophysics Data System (ADS)

    Lin, Wen-Kai; Su, Shui-Hsiang; Liu, Che-Chun; Yokoyama, Meiso

    2014-11-01

    In this study, inverted organic solar cells (IOSCs) have been fabricated and characterized. A sol-gel zinc oxide (ZnO) film is used as a hole-blocking layer (HBL). Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and copper phthalocyanine (CuPc) are used as a hole-transporting layer (HTL). The HBL, active layer, and HTL films are fabricated by spin-coating technique. The anode is fabricated from Ag nanoparticles by drop titration using a Pasteur burette. Experimental results show that the PEDOT:PSS/CuPc stacked HTL provides a stepwise hole-transporting energy diagram configuration, which subsequently increases the charge carrier transporting capability and extracts holes from the active layer to the anode. The characteristics of the IOSCs were optimized and exhibited an open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of 0.53 V, 6.13 mA/cm2, 37.53%, and 1.24%, respectively, under simulated AM1.5G illumination of 100 mW/cm2. Hence, a solution process is feasible for fabricating low-cost and large-area solar energy devices.

  13. Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Shiye; Liu, Weili; Wan, Qing; Dai, J. Y.; Lee, P. F.; Suhua, Luo; Shen, Qinwo; Zhang, Miao; Song, Zhitang; Lin, Chenglu

    2005-03-01

    A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2/SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I -V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2 was achieved.

  14. Basic criteria for formation of growth twins in high stacking fault energy metals

    SciTech Connect

    Yu, K. Y.; Zhang, X.; Bufford, D.; Chen, Y.; Liu, Y.; Wang, H.

    2013-10-28

    Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

  15. Quantum theory for the nanoscale propagation of light through stacked thin film layers

    NASA Astrophysics Data System (ADS)

    Forbes, Kayn A.; Williams, Mathew D.; Andrews, David L.

    2016-04-01

    Stacked multi-layer films have a range of well-known applications as optical elements. The various types of theory commonly used to describe optical propagation through such structures rarely take account of the quantum nature of light, though phenomena such as Anderson localization can be proven to occur under suitable conditions. In recent and ongoing work based on quantum electrodynamics, it has been shown possible to rigorously reformulate, in photonic terms, the fundamental mechanisms that are involved in reflection and optical transmission through stacked nanolayers. Accounting for sum-over-pathway features in the quantum mechanical description, this theory treats the sequential interactions of photons with material boundaries in terms of individual scattering events. The study entertains an arbitrary number of reflections in systems comprising two or three internally reflective surfaces. Analytical results are secured, without recourse to FTDT (finite-difference time-domain) software or any other finite-element approximations. Quantum interference effects can be readily identified. The new results, which cast the optical characteristics of such structures in terms of simple, constituent-determined properties, are illustrated by model calculations.

  16. Blocking force of a piezoelectric stack actuator made of single crystal layers (PMN-29PT)

    NASA Astrophysics Data System (ADS)

    Tran, K. S.; Phan, H. V.; Lee, H. Y.; Kim, Yongdae; Park, H. C.

    2016-09-01

    In this study, we fabricated and characterized a stack actuator made of forty layers of 1 mm thick PMN-29PT with a cross-sectional area of 10 × 10 mm2. From the measurement of actuation displacement, we confirmed that the piezoelectric strain constant in the direction of thickness of the material is 2000 pm V‑1, as suggested by the manufacturer. The blocking forces of the actuator are measured to be 230 N, 369 N, and 478 N for 100 V, 200 V, and 300 V, respectively. The measured blocking forces showed large discrepancies from the estimated blocking forces calculated using linear models, especially for a high voltage application. An empirical equation acquired by fitting the measured blocking forces indicates that the blocking force has a nonlinear relationship with the applied voltage. The measured hysteresis showed a slight nonlinear voltage-stroke relationship and small energy loss.

  17. Clinical characterization of a proton beam continuous uniform scanning system with dose layer stacking

    PubMed Central

    Farr, J. B.; Mascia, A. E.; Hsi, W.-C.; Allgower, C. E.; Jesseph, F.; Schreuder, A. N.; Wolanski, M.; Nichiporov, D. F.; Anferov, V.

    2008-01-01

    A proton beam delivery system on a gantry with continuous uniform scanning and dose layer stacking at the Midwest Proton Radiotherapy Institute has been commissioned and accepted for clinical use. This paper was motivated by a lack of guidance on the testing and characterization for clinical uniform scanning systems. As such, it describes how these tasks were performed with a uniform scanning beam delivery system. This paper reports the methods used and important dosimetric characteristics of radiation fields produced by the system. The commissioning data include the transverse and longitudinal dose distributions, penumbra, and absolute dose values. Using a 208 MeV cyclotron’s proton beam, the system provides field sizes up to 20 and 30 cm in diameter for proton ranges in water up to 27 and 20 cm, respectively. The dose layer stacking method allows for the flexible construction of spread-out Bragg peaks with uniform modulation of up to 15 cm in water, at typical dose rates of 1–3 Gy∕min. For measuring relative dose distributions, multielement ion chamber arrays, small-volume ion chambers, and radiographic films were employed. Measurements during the clinical commissioning of the system have shown that the lateral and longitudinal dose uniformity of 2.5% or better can be achieved for all clinically important field sizes and ranges. The measured transverse penumbra widths offer a slight improvement in comparison to those achieved with a double scattering beam spreading technique at the facility. Absolute dose measurements were done using calibrated ion chambers, thermoluminescent and alanine detectors. Dose intercomparisons conducted using various types of detectors traceable to a national standards laboratory indicate that the measured dosimetry data agree with each other within 5%. PMID:19070228

  18. Optical transmission through double-layer, laterally shifted metallic subwavelength hole arrays

    SciTech Connect

    Marset, zsolt; Hang, z. h.; Chan, C. T.; Kravchenko, Ivan I; Bower, J. E.

    2010-01-01

    We measure the transmission of infra-red radiation through double-layer metal lms with periodic arrays of subwavelength holes. When the two metal lms are placed in su ciently close proximity, two types of transmission resonances emerge. For the surface plasmon mode, the electromagnetic eld is concentrated on the outer surface of the entire metallic layer stack. In contrast, for the guided mode the eld is con ned to the gap between the two metal layers. Our measurements indicate that as the two layers are laterally shifted from perfect alignment, the peak transmission frequency of the guided mode decreases signi cantly, while that of the surface plasmon mode remains largely unchanged, in agreement with numerical calculations.

  19. GO-induced assembly of gelatin toward stacked layer-like porous carbon for advanced supercapacitors.

    PubMed

    Zhang, Xiaomeng; Jiao, Yanqing; Sun, Li; Wang, Lei; Wu, Aiping; Yan, Haijing; Meng, Meichen; Tian, Chungui; Jiang, Baojiang; Fu, Honggang

    2016-01-28

    Layer-like nanocarbons with high surface area and good conductivity are promising materials for supercapacitors due to their good ability for effective charge-transfer and mass-transfer. In this paper, stacked layer-like porous carbon containing RGO (reduced graphene oxides) (LPCG) was constructed via the GO-induced assembly of gelatin followed by carbonization and activation processes. Under suitable conditions, LPCG-based materials with a thickness of about 100 nm and a high specific surface area (up to 1476 m(2) g(-1)) could be obtained. In the materials, the closed combination of RGO and porous carbon can be observed, which is favourable for the development of the synergistic effects of both components. The presence of GO can not only enhance the conductivity of LPCG-based materials, but also is essential for the formation of a thin carbon sheet with a stacked structure. Otherwise, the plate-like, non-stacked carbon with a thickness of about 500 nm could be formed in the absence of RGO. The porous structure along with the presence of RGO allows rapid charge-transfer and easy access and diffusion of electrolyte ions. As a result, the materials exhibited a high discharge specific capacitance (455 F g(-1) at 0.5 A g(-1), 366 F g(-1) at 1 A g(-1)), good rate capability (221 F g(-1) at density 30 A g(-1)) and good cycling stability. In aqueous electrolytes, the energy density could be up to 9.32 W h kg(-1) at a relatively low power density of 500 W kg(-1) with a good cycling stability (>96% over 5000 cycles). It was found that (1) the rational combination of RGO and porous carbon is essential for enhancing the capacitance performance and improving the cycling stability and (2) the high conductivity is favorable for improving the rate performance of the materials. The LPCG-based materials have extensive potential for practical applications in energy storage and conversion devices. PMID:26755198

  20. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  1. Interaction of metal layers with polycrystalline Si

    NASA Technical Reports Server (NTRS)

    Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

    1976-01-01

    Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

  2. Conceptual design of stacked-layer detectors to increase the sensitivity of Fast Neutron Gamma-ray Radiography (FNGR)

    NASA Astrophysics Data System (ADS)

    Cho, Jea Hyung; Kim, Kwang Hyun; Chung, Young Hyun

    2012-04-01

    This study is focused on the structure and other possible factors related to scintillators used in the Fast Neutron and Gamma-ray Radiography (FNGR) system to increase its sensitivity. The CsI(Tl) crystal scintillator (Co-60 gamma-ray detection) and the BC430 plastic scintillator (14 MeV fast neutron detection) were analyzed with the Monte Carlo simulation (MCNPX and DETEC97 codes). Each scintillator was investigated with regard to the optimum thickness (1 cm × 1 cm), reconfiguration of detector modules (a stacked-layer structure), the optimum surface treatment, and the spectral matching with customized PIN-type photodiodes. As a result, the optimum thickness of the CsI(Tl) was found to be 4.5 cm; the optimum value was 5.5 cm for the BC430. When the detector modules were stacked in a sandwich structure rather than the existing single detector structure, the light photon transmission to the surface of the photodiode was enhanced by 40% and 58% for CsI(Tl) and BC430, respectively. In the matter of scintillator surface treatment, both scintillators were simulated with unpolished and polished condition before coating. The polished condition of the scintillator surfaces showed a higher performance, more than doubling that of the unpolished condition surfaces. Then, the performance improvement of the scintillator with the paint coating was compared to the scintillator with the metal coating conditions. For CsI(Tl), the metal coating showed a 10 % higher performance than that of the paint coating, and the metal coating of BC430 showed a 6% higher performance than that of the paint coating. As a result of spectral matching between the scintillators and the customized PIN-photodiodes, PS100-6b of Silicon AG, SD445-14-21-305 of API, and FSD1010-CAL of THOLABS were compared. The spectral matching factor of PS100-6b was 0.39 with CsI(Tl) and was 0.42 with BC430; the spectral matching factors of the other samples were relatively lower (SD445-14-21-305 with CsI(Tl): 0.29; SD445

  3. Vertically Stacked Graphene/Transition-Metal-Dichalcogenides/Graphene Heterojunction Devices for High Performance Photodetectors

    NASA Astrophysics Data System (ADS)

    Heo, Jinseong; Jeong, Heejeong; Lee, Jaeho; Lee, Kiyoung; Lee, Eun-Kyu; Lee, Sangyeob; Cho, Yeonchoo; Byun, Kyung-Eun; Lee, Chang-Won; Park, Seongjun; Hwang, Sungwoo

    Photodetectors based on vertically stacked graphene heterojunctions have advantages of short transit length for photo-generated carriers and large sensing area, thus implying fast response time and high responsivity. Previously, vertically stacked Graphene (Gr)/Transition-Metal-Dichalcogenide (TMDC)/Gr junctions were introduced for optoelectronic devices, showing high current on and off ratio as well as photoresponsivity. But for high performance photodetectors, both thorough and comparative study in terms of the figures of merit such as photoresponse time and photoresponsivity depending on different TMDC materials is crucial. Here, we report fast response time (28 us) and high responsivity (20 A/W) from Gr/WSe2 and MoS2/Gr, respectively. At the same time, those devices operate as p- and n-type barrier-variable transistors, respectively, being a potential building block for optoelectronic system on a chip.

  4. GO-induced assembly of gelatin toward stacked layer-like porous carbon for advanced supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaomeng; Jiao, Yanqing; Sun, Li; Wang, Lei; Wu, Aiping; Yan, Haijing; Meng, Meichen; Tian, Chungui; Jiang, Baojiang; Fu, Honggang

    2016-01-01

    Layer-like nanocarbons with high surface area and good conductivity are promising materials for supercapacitors due to their good ability for effective charge-transfer and mass-transfer. In this paper, stacked layer-like porous carbon containing RGO (reduced graphene oxides) (LPCG) was constructed via the GO-induced assembly of gelatin followed by carbonization and activation processes. Under suitable conditions, LPCG-based materials with a thickness of about 100 nm and a high specific surface area (up to 1476 m2 g-1) could be obtained. In the materials, the closed combination of RGO and porous carbon can be observed, which is favourable for the development of the synergistic effects of both components. The presence of GO can not only enhance the conductivity of LPCG-based materials, but also is essential for the formation of a thin carbon sheet with a stacked structure. Otherwise, the plate-like, non-stacked carbon with a thickness of about 500 nm could be formed in the absence of RGO. The porous structure along with the presence of RGO allows rapid charge-transfer and easy access and diffusion of electrolyte ions. As a result, the materials exhibited a high discharge specific capacitance (455 F g-1 at 0.5 A g-1, 366 F g-1 at 1 A g-1), good rate capability (221 F g-1 at density 30 A g-1) and good cycling stability. In aqueous electrolytes, the energy density could be up to 9.32 W h kg-1 at a relatively low power density of 500 W kg-1 with a good cycling stability (>96% over 5000 cycles). It was found that (1) the rational combination of RGO and porous carbon is essential for enhancing the capacitance performance and improving the cycling stability and (2) the high conductivity is favorable for improving the rate performance of the materials. The LPCG-based materials have extensive potential for practical applications in energy storage and conversion devices.Layer-like nanocarbons with high surface area and good conductivity are promising materials for

  5. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

    PubMed Central

    Khan, Z. N.; Ahmed, S.; Ali, M.

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  6. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    PubMed

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  7. Investigation of Clad Metals for Use as Bipolar Plate Material in PEM Fuel Cell Stacks

    SciTech Connect

    Rich, John S.; Meier, Alan M.; Kim, Jin Yong; Xia, Guanguang; Yang, Zhenguo; Weil, K. Scott

    2006-07-21

    Although metal interconnects offer many advantages over their carbon-based counterparts, they suffer from surface corrosion which leads to a release of metal ions that can contaminate the electrolyte membrane and poison the electrode catalysts. In addition, the formation of a passivating oxide or oxyhydroxide layer on the surface of the metal will increase the contact resistance between the bipolar plate and the graphite electrode backing. The approach currently under development employs an inexpensive clad metal laminate as the primary material for the bipolar plate. The key in making this work is in identifying an appropriate surface passivation layer that mitigates corrosion while at the same time allows for good electronic conduction. The current study investigated the kinetics of nitride formation on Nb and Ti foils as a function of time, temperature, atmosphere (N2-H2 gas composition), and the corrosion behavior. These two metals are being considered for use as a thin external cladding layer over an inexpensive steel core layer. As the nitride layer formation temperature was increased, the surface morphologies for both niobium and titanium substrates became coarser and more pitted, the nitride thicknesses of both increased non-linearly, and in the titanium system an oxide layer product layer on the outer surface grew as well. As the isothermal hold time was increased, the surface morphologies of both niobium and titanium reaction product layers did not change noticeably, and the thicknesses of the nitride layers increased. As the amount of hydrogen in the atmosphere was increased the surface morphologies for both the niobium and titanium did not change detectably, the thicknesses of the nitride layers increased, and titanium thicknesses of the oxide layers decreased. The nitrided niobium exhibited much better corrosion behavior than the nitrided titanium but no improvement was obtained relative to the pure Nb corrosion rates.

  8. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers

    PubMed Central

    Bogdanov, Nikolay A.; Katukuri, Vamshi M.; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-01-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics. PMID:26105992

  9. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers.

    PubMed

    Bogdanov, Nikolay A; Katukuri, Vamshi M; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-01-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics. PMID:26105992

  10. Wafer-scale double-layer stacked Au/Al2O3@Au nanosphere structure with tunable nanospacing for surface-enhanced Raman scattering.

    PubMed

    Hu, Zhaosheng; Liu, Zhe; Li, Lin; Quan, Baogang; Li, Yunlong; Li, Junjie; Gu, Changzhi

    2014-10-15

    Fabricating perfect plasmonic nanostructures has been a major challenge in surface enhanced Raman scattering (SERS) research. Here, a double-layer stacked Au/Al2O3@Au nanosphere structures is designed on the silicon wafer to bring high density, high intensity "hot spots" effect. A simply reproducible high-throughput approach is shown to fabricate feasibly this plasmonic nanostructures by rapid thermal annealing (RTA) and atomic layer deposition process (ALD). The double-layer stacked Au nanospheres construct a three-dimensional plasmonic nanostructure with tunable nanospacing and high-density nanojunctions between adjacent Au nanospheres by ultrathin Al2O3 isolation layer, producing highly strong plasmonic coupling so that the electromagnetic near-field is greatly enhanced to obtain a highly uniform increase of SERS with an enhancement factor (EF) of over 10(7). Both heterogeneous nanosphere group (Au/Al2O@Ag) and pyramid-shaped arrays structure substrate can help to increase the SERS signals further, with a EF of nearly 10(9). These wafer-scale, high density homo/hetero-metal-nanosphere arrays with tunable nanojunction between adjacent shell-isolated nanospheres have significant implications for ultrasensitive Raman detection, molecular electronics, and nanophotonics. PMID:24995658

  11. A wide-angle broadband polarization-dependent absorber with stacked metal-dielectric grating

    NASA Astrophysics Data System (ADS)

    Liao, Yan-Lin; Zhao, Yan

    2016-07-01

    We report an absorber in the mid-infrared regime by using stacked metal-dielectric grating structure. The simulation results show that the minimal absorption magnitude is larger than 0.8 in the broadband range for angles up to 60° for TM polarization (magnetic field is parallel to grating grooves). At the same time, absorption for TE polarization (electric field is parallel to grating grooves) is negligible. Furthermore, such broadband absorption for TM polarization can be tuned by shrinking or enlarging the grating parameters. This absorber is a good candidate for potential applications such as polarization detectors and polarizers.

  12. Structure change, layer sliding, and metallization in high-pressure MoS2

    NASA Astrophysics Data System (ADS)

    Tosatti, Erio; Hromadova, Liliana; Martonak, Roman

    2013-03-01

    Based on ab initio calculations and metadynamics simulations, we predict that 2H-MoS2, a layered insulator, will metallize under pressures in excess of 20-30 GPa. In the same pressure range, simulations and enthalpy optimization predict a structural transition. Reminiscent of this material's frictional properties, free mutual sliding of layers takes place at this transition, where the original 2Hc stacking changes to a 2Ha stacking typical of 2H-NbSe2, a transformation which explains for the first time previously mysterious X-ray diffraction data. Phonon and electron phonon calculations suggest that metallic pristine MoS2 will require ultrahigh pressures in order to develop superconductivity. Supported by EU-Japan Project LEMSUPER, by a SNF Sinergia Project, and by the Slovak Research and Development Agency

  13. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  14. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Das, Gangadhar; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics.

  15. Synthesis and characterization of petal type CZTS by stacked layer reactive sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Om Pal; Parmar, R.; Gour, K. S.; Dalai, M. K.; Tawale, Jai; Singh, S. P.; Singh, Vidya Nand

    2015-12-01

    Here we present a method to grow the petal type structure of CZTS thin film on soda lime glass substrate using the stacked layer reactive sputtering and post-depostion annealing in N2 atmosphere. Optical bandgap of the petal type structure of CZTS was determined using UV-VIS spectroscopy and the value was 1.5 eV. In XRD analysis, (112) plane having highest intensity and other supporting planes with low intensity peaks corresponding to (200), (220) and (312) revealed the presence of CZTS phase. It was further confirmed by the Raman analysis, where the Raman peaks at 288 cm-1, 335 cm-1 and 353 cm-1 revealed the presence of CZTS phase. Petal type growth was observed in the scanning electron microscopy analysis. Elemental analysis was done by the EDAX. In EDAX analysis, It is observed that sample was Sn rich which may be responsible for petal type growth. Petal type growth of CZTS may be helpful in increasing the performance of the CZTS based thin film solar cell by phenomena of light scattering and enhanced surface area.

  16. Stacked thin layers of metaphase chromatin explain the geometry of chromosome rearrangements and banding

    PubMed Central

    Daban, Joan-Ramon

    2015-01-01

    The three-dimensional organization of tightly condensed chromatin within metaphase chromosomes has been one of the most challenging problems in structural biology since the discovery of the nucleosome. This study shows that chromosome images obtained from typical banded karyotypes and from different multicolour cytogenetic analyses can be used to gain information about the internal structure of chromosomes. Chromatin bands and the connection surfaces in sister chromatid exchanges and in cancer translocations are planar and orthogonal to the chromosome axis. Chromosome stretching produces band splitting and even the thinnest bands are orthogonal and well defined, indicating that short stretches of DNA can occupy completely the chromosome cross-section. These observations impose strong physical constraints on models that attempt to explain chromatin folding in chromosomes. The thin-plate model, which consists of many stacked layers of planar chromatin perpendicular to the chromosome axis, is compatible with the observed orientation of bands, with the existence of thin bands, and with band splitting; it is also compatible with the orthogonal orientation and planar geometry of the connection surfaces in chromosome rearrangements. The results obtained provide a consistent interpretation of the chromosome structural properties that are used in clinical cytogenetics for the diagnosis of hereditary diseases and cancers. PMID:26446309

  17. The Mass-Metallicity Relation with the Direct Method on Stacked Spectra of SDSS Galaxies

    NASA Astrophysics Data System (ADS)

    Andrews, Brett H.; Martini, Paul

    2013-03-01

    The relation between galaxy stellar mass and gas-phase metallicity is a sensitive diagnostic of the main processes that drive galaxy evolution, namely cosmological gas inflow, metal production in stars, and gas outflow via galactic winds. We employed the direct method to measure the metallicities of ~200,000 star-forming galaxies from the Sloan Digital Sky Survey that were stacked in bins of (1) stellar mass and (2) both stellar mass and star formation rate (SFR) to significantly enhance the signal-to-noise ratio of the weak [O III] λ4363 and [O II] λλ7320, 7330 auroral lines required to apply the direct method. These metallicity measurements span three decades in stellar mass from log(M sstarf/M ⊙) = 7.4-10.5, which allows the direct method mass-metallicity relation to simultaneously capture the high-mass turnover and extend a full decade lower in mass than previous studies that employed more uncertain strong line methods. The direct method mass-metallicity relation rises steeply at low mass (O/H vprop M sstarf 1/2) until it turns over at log(M sstarf/M ⊙) = 8.9 and asymptotes to 12 + log(O/H) = 8.8 at high mass. The direct method mass-metallicity relation has a steeper slope, a lower turnover mass, and a factor of two to three greater dependence on SFR than strong line mass-metallicity relations. Furthermore, the SFR-dependence appears monotonic with stellar mass, unlike strong line mass-metallicity relations. We also measure the N/O abundance ratio, an important tracer of star formation history, and find the clear signature of primary and secondary nitrogen enrichment. N/O correlates tightly with oxygen abundance, and even more so with stellar mass.

  18. THE MASS-METALLICITY RELATION WITH THE DIRECT METHOD ON STACKED SPECTRA OF SDSS GALAXIES

    SciTech Connect

    Andrews, Brett H.; Martini, Paul

    2013-03-10

    The relation between galaxy stellar mass and gas-phase metallicity is a sensitive diagnostic of the main processes that drive galaxy evolution, namely cosmological gas inflow, metal production in stars, and gas outflow via galactic winds. We employed the direct method to measure the metallicities of {approx}200,000 star-forming galaxies from the Sloan Digital Sky Survey that were stacked in bins of (1) stellar mass and (2) both stellar mass and star formation rate (SFR) to significantly enhance the signal-to-noise ratio of the weak [O III] {lambda}4363 and [O II] {lambda}{lambda}7320, 7330 auroral lines required to apply the direct method. These metallicity measurements span three decades in stellar mass from log(M{sub *}/M{sub Sun }) = 7.4-10.5, which allows the direct method mass-metallicity relation to simultaneously capture the high-mass turnover and extend a full decade lower in mass than previous studies that employed more uncertain strong line methods. The direct method mass-metallicity relation rises steeply at low mass (O/H {proportional_to} M{sub *} {sup 1/2}) until it turns over at log(M{sub *}/M{sub Sun }) = 8.9 and asymptotes to 12 + log(O/H) = 8.8 at high mass. The direct method mass-metallicity relation has a steeper slope, a lower turnover mass, and a factor of two to three greater dependence on SFR than strong line mass-metallicity relations. Furthermore, the SFR-dependence appears monotonic with stellar mass, unlike strong line mass-metallicity relations. We also measure the N/O abundance ratio, an important tracer of star formation history, and find the clear signature of primary and secondary nitrogen enrichment. N/O correlates tightly with oxygen abundance, and even more so with stellar mass.

  19. [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    NASA Astrophysics Data System (ADS)

    Liu, E.; Swerts, J.; Couet, S.; Mertens, S.; Tomczak, Y.; Lin, T.; Spampinato, V.; Franquet, A.; Van Elshocht, S.; Kar, G.; Furnemont, A.; De Boeck, J.

    2016-03-01

    Alternative free layer materials with high perpendicular anisotropy are researched to provide spin-transfer-torque magnetic random access memory stacks' sufficient thermal stability at critical dimensions of 20 nm and below. We demonstrate a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB. The seed material on which the [Co/Ni] multilayer is deposited determines its switching characteristics. When deposited on a Pt seed layer, soft magnetic switching behavior with high squareness is obtained. When deposited on a NiCr seed, the perpendicular anisotropy remains high, but the squareness is low and coercivity exceeds 1000 Oe. Interdiffusion of the seed material with the [Co/Ni] multilayers is found to be responsible for the different switching characteristics. In optimized stacks, a TMR of 165% and low resistance-area (RA) product of 7.0 Ω μm2 are attained for free layers with an effective perpendicular magnetic anisotropy energy of 1.25 erg/cm2, which suggests that the hybrid free layer materials may be a viable candidate for high density magnetic random access memory applications.

  20. Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-07

    A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scaling to 0.5 nm is also demonstrated based on these understandings.

  1. Design of wide-angle solar-selective absorbers using aperiodic metal-dielectric stacks.

    PubMed

    Sergeant, Nicholas P; Pincon, Olivier; Agrawal, Mukul; Peumans, Peter

    2009-12-01

    Spectral control of the emissivity of surfaces is essential in applications such as solar thermal and thermophotovoltaic energy conversion in order to achieve the highest conversion efficiencies possible. We investigated the spectral performance of planar aperiodic metal-dielectric multilayer coatings for these applications. The response of the coatings was optimized for a target operational temperature using needle-optimization based on a transfer matrix approach. Excellent spectral selectivity was achieved over a wide angular range. These aperiodic metal-dielectric stacks have the potential to significantly increase the efficiency of thermophotovoltaic and solar thermal conversion systems. Optimal coatings for concentrated solar thermal conversion were modeled to have a thermal emissivity <7% at 720K while absorbing >94% of the incident light. In addition, optimized coatings for solar thermophotovoltaic applications were modeled to have thermal emissivity <16% at 1750K while absorbing >85% of the concentrated solar radiation. PMID:20052206

  2. Effects of stacking fault energy on defect formation process in face-centered cubic metals

    NASA Astrophysics Data System (ADS)

    Okita, Taira; Yang, Yingjuan; Hirabayashi, Junichi; Itakura, Mitsuhiro; Suzuki, Katsuyuki

    2016-05-01

    To elucidate the effect of stacking fault energies (SFEs) on defect formation by the collision cascade process for face-centred cubic metals, we used six sets of interatomic potentials with different SFEs while keeping the other properties almost identical. Molecular dynamic simulations of the collision cascade were carried out using these potentials with primary knock-on atom energies (EPKA) of 10 and 20 keV at 100 K. Neither the number of residual defects nor the size distributions for both self-interstitial atom (SIA) type and vacancy type clusters were affected by the difference in the SFE. In the case of EPKA = 20 keV, the ratio of glissile SIA clusters increased as the SFE decreased, which was not expected by a prediction based on the classical dislocation theory. The trend did not change after annealing at 1100 K for 100 ps. For vacancy clusters, few stacking fault tetrahedrons (SFTs) formed before the annealing. However, lower SFEs tended to increase the SFT fraction after the annealing, where large vacancy clusters formed at considerable densities. The findings of this study can be used to characterise the defect formation process in low SFE metals such as austenitic stainless steels.

  3. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NASA Astrophysics Data System (ADS)

    Garcia-Alonso, D.; Smit, S.; Bordihn, S.; Kessels, W. M. M.

    2013-08-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max < 4 cm s-1) on n- and p-type Si than single-layer Al2O3 films for a wide range of ZnO thicknesses and irrespective of Al-doping of the ZnO. Stacks with an Al2O3 thickness of 1-2 nm were found to combine reasonable surface passivation (Seff,max = 100-700 cm s-1) with sufficiently high tunneling current densities (10-300 mA cm-2 at 700 mV).

  4. Porus electrode comprising a bonded stack of pieces of corrugated metal foil

    NASA Technical Reports Server (NTRS)

    Mccallum, J. (Inventor)

    1973-01-01

    An electrode suitable for use in an electrochemical cell is described. The electrode is composed of a porous conductive support with a bonded stack of pieces of thin corrugated nickel foil where the corrugations are oriented approximately perpendicular to the sides of the electrode and form an array of passages through the electrode. Active material such as cadmium hydroxide or nickel hydroxide is uniformly distributed within the passages. The support may comprise also a piece of thin flat nickel foil between adjacent pieces of the corrugated foil, forming a barrier between the passages formed on each side of it. Typically the corrugations in the odd corrugated layers are oriented at a small angle from the perpendicular in one direction and the corrugations in the even corrugated layers are oriented at a small angle from the perpendicular in the opposite direction.

  5. Stacking faults on (001) in transition-metal disilicides with the C11{sub b} structure

    SciTech Connect

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-12-31

    Stacking faults on (001) in MoSi{sub 2} and WSi{sub 2} with the C11{sub b} structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi{sub 2} contains a high density of stacking faults, only several faults are observed in MoSi{sub 2}. For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 {+-} 0.10 and 3.34 {+-} 0.10 for MoSi{sub 2} and WSi{sub 2}, respectively.

  6. Laser evaporation of metal sandwich layers for improved IC metallization

    NASA Astrophysics Data System (ADS)

    Pielmeier, R.; Bollmann, D.; Haberger, K.

    1990-12-01

    With the further shrink of IC dimensions, metallization becomes the most crucial layer because conductivity and contact resistivity determine the RC constants and thus the speed of the circuits. With our Q-switched Nd:YAG laser we have evaporated different materials (Al, Ti, W, Pt, Au), alloys (Ta-Si) and dielectrics (ZrO 2, Al 2O 3). We also produced sandwich layers (Al-Au, Ti-Al). The layers were investigated with regard to deposition rate, homogeneity, adhesion, step coverage and surface roughness. Deposition rates in the order of 60 nm/min were achieved. At a power of 10 W and a repetition rate of about 5 kHz we could form ohmic contacts to silicon with a good step coverage in the contact.

  7. New Layered Ternary Transition-Metal Tellurides

    NASA Astrophysics Data System (ADS)

    Mar, Arthur

    Several new ternary transition-metal tellurides, a class of compounds hitherto largely unexplored, have been synthesized and characterized. These are layered materials whose structures have been determined by single -crystal X-ray diffraction methods. The successful preparation of the compound TaPtTe_5 was crucial in developing an understanding of the MM'Te_5 (M = Nb, Ta; M' = Ni, Pd, Pt) series of compounds, which adopt either of two possible closely-related layered structures. Interestingly, the compound TaPdTe _5 remains unknown. Instead, the compound Ta_4Pd_3Te _{16} has been prepared. Its structure is closely related to that of the previously prepared compound Ta_3Pd _3Te_{14}. The physical properties of these compounds have been measured and correlated with the metal substitutions and interlayer separations. A new series of compounds, MM'Te _4 (M = Nb, Ta; M' = Ru, Os, Rh, Ir), has been discovered. The structure of NbIrTe_4 serves as a prototype: it is an ordered variant of the binary telluride WTe_2. Electronic band-structure calculations have been performed in order to rationalize the trends in metal-metal and tellurium -tellurium bonding observed in WTe_2 and the MM'Te_4 phases. Extension of these studies to include main-group metals has resulted in the synthesis of the new layered ternary germanium tellurides TiGeTe_6, ZrGeTe_4 , and HfGeTe_4. Because germanium can behave ambiguously in its role as a metalloid element, it serves as an anion by capping the metal-centered trigonal prisms and also as a cation in being coordinated in turn by other tellurium atoms in a trigonal pyramidal fashion. Structural relationships among these compounds are illustrated through the use of bicapped trigonal prisms and trigonal pyramids as the basic structural building blocks. The electrical and magnetic properties of these compounds have been measured. Insight into the unusual bonding and physical properties of these germanium-containing compounds has been gained through

  8. Construction of a two layer quarter-wave stack consisting of TiO2 and SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Papavasiliou, Kriton; Heflin, J. R.; Ritter, Alfred

    2010-03-01

    There are several methods of depositing quarter-wave stacks including vacuum deposition and spin coating that are expensive and/or unsuitable for large and non-planar surfaces. These difficulties can be ameliorated by using ISAM (Ionic Self-Assembled Monolayers) for depositing the films. A quarter-wave stack has been constructed with a low refractive index layer of SiO2 nanoparticles and a high refractive index layer of TiO2 nanoparticles. The process conditions for the quarter-wave stack have been optimized by a factorial design experiment. The optical properties of the stack will be reported.

  9. Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

    NASA Astrophysics Data System (ADS)

    Tagami, Masayoshi; Inoue, Naoya; Ueki, Makoto; Narihiro, Mitsuru; Tada, Munehiro; Yamamoto, Hironori; Ito, Fuminori; Furutake, Naoya; Saito, Shinobu; Onodera, Takahiro; Takeuchi, Tsuneo; Hayashi, Yoshihiro

    2012-09-01

    Low capacitance and highly reliable Cu dual-damascene (DD) interconnects have been developed with self-organized “seamless low-k SiOCH stacks” (SEALS) structure. A carbon-rich sub-nano porous SiOCH (k=2.5) was directly stacked on an oxygen-rich porous SiOCH (k=2.7) in the SEALS structure, without a hard-mask (HM) and etch-stop (ES) layer of SiO2. The effective k-value (keff) of the Cu DD interconnect including the SiCN capping layer (k=4.9) was reduced to 2.9 compared to 3.4 on a conventional hybrid structure with SiO2-HM and ES, which had been used in 65-nm-node mass production. The interconnect delay of a 45-nm-node complementary metal oxide semiconductor (CMOS) ring oscillator (RO) was reduced by 15% referring to that of the conventional hybrid structure. Interconnect reliabilities, such as the interline time dependent dielectric breakdown (TDDB) and thermal cycles, were unchanged from those of the conventional hybrid interconnects. No failure was detected for chip package interaction (CPI) during reliability tests in a plastic ball grid array (PBGA) package. SEALS is a promising structure for scaled down ultra large scale integrations (ULSIs) for highly reliable and high speed operation, and low power consumption.

  10. Photovoltaic device having light transmitting electrically conductive stacked films

    DOEpatents

    Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

    1990-07-10

    A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

  11. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

    PubMed Central

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

  12. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.

    PubMed

    Yao, Liyong; Ao, Jianping; Jeng, Ming-Jer; Bi, Jinlian; Gao, Shoushuai; He, Qing; Zhou, Zhiqiang; Sun, Guozhong; Sun, Yun; Chang, Liann-Be; Chen, Jian-Wun

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

  13. Tight-binding study of stacking fault energies and the Rice criterion of ductility in the fcc metals

    NASA Astrophysics Data System (ADS)

    Mehl, Michael J.; Papaconstantopoulos, Dimitrios A.; Kioussis, Nicholas; Herbranson, M.

    2000-02-01

    We have used the Naval Research Laboratory (NRL) tight-binding (TB) method to calculate the generalized stacking fault energy and the Rice ductility criterion in the fcc metals Al, Cu, Rh, Pd, Ag, Ir, Pt, Au, and Pb. The method works well for all classes of metals, i.e., simple metals, noble metals, and transition metals. We compared our results with full potential linear-muffin-tin orbital and embedded atom method (EAM) calculations, as well as experiment, and found good agreement. This is impressive, since the NRL-TB approach only fits to first-principles full-potential linearized augmented plane-wave equations of state and band structures for cubic systems. Comparable accuracy with EAM potentials can be achieved only by fitting to the stacking fault energy.

  14. Investigating doping effects on high-κ metal gate stack for effective work function engineering

    NASA Astrophysics Data System (ADS)

    Leroux, C.; Baudot, S.; Charbonnier, M.; Van Der Geest, A.; Caubet, P.; Toffoli, A.; Blaise, Ph.; Ghibaudo, G.; Martin, F.; Reimbold, G.

    2013-10-01

    The impact of additives (La, Al and Mg) at the SiO2/high-κ interface has been investigated through ab initio simulations and electrical measurements. Various gate stacks with additive below or the above high-κ dielectric are compared. Combination of capacitance versus gate bias measurement and internal photon emission is performed to demonstrate that the threshold voltage shift is related to a dipole formation at the SiO2/high-κ interface. The respective roles of aluminum and lanthanum are clearly identified as well as their sensitivity to roll-off. Impact of additive on metal gate function is studied. Finally, ab initio enables an analysis of the dipole formation with additive at the SiO2/HfO2 interface.

  15. Atomic layer deposition of metallic cobalt

    NASA Astrophysics Data System (ADS)

    Kwon, Jinhee; Saly, Mark; Kanjolia, Ravi; Chabal, Yves; University of Texas at Dallas Collaboration; SAFC Collaboration

    2011-03-01

    Metallic cobalt has rich catalytic, electronic and magnetic properties, which makes it critical to have a better control of Co thin film deposition for various applications. This work focuses on the atomic layer deposition (ALD) of cobalt using (tertiarybutylallyl)cobalttricarbonyl (t BuAllyl)Co(CO)3 and dimethylhydrazine (DMHy) on H-terminated Si to uncover the growth mechanisms. The first pulse of (t BuAllyl)Co(CO)3 reacts with surface H--Si bonds completely, forming one monolayer of metallic silicide. In situ infrared absorption spectra show that further deposition of Co is made possible only after linear carbonyl groups which remain after the first (t BuAllyl)Co(CO)3 pulse as the surface ligand are removed by subsequent ALD cycles. Further ALD cycles give rise to metallic Co growth through ligand exchange after a nucleation period of 8--10 cycles. The derived growth rate of cobalt is 0.6 +/- 0.1 Å/cycle. The resultant Co film shows low concentration of carbon and nitrogen impurities in the bulk according to X-ray photoemission spectroscopy.

  16. Charge transport in stacking metal and metal-free phthalocyanine iodides. Effects of packing, dopants, external electric field, central metals, core modification, and substitutions.

    PubMed

    Chen, Shuang; Ma, Jing

    2009-10-01

    The charge-transport properties of the one-dimensional stacking metal phthalocyanine iodides (M(Pc)I, M = Fe, Co, Ni, Cu) and metal-free phthalocyanine iodide (H2(Pc)I) have been theoretically investigated. On the basis of the tight-binding approximation and two-state theory, both the site-energy corrected energy splitting in dimer and Fock-matrix-based methods are used to calculate the transfer integral. The intermolecular motions, including interplanar translation, rotation, slip, and tilt, exert remarkable impacts on the transfer integral. The order/disorder of the dopant stack and the long-range electrostatic interactions are also demonstrated to be crucial factors for modulation of charge-transport properties. The transfer integral undergoes slight changes under an applied electric field along the stacking direction in the range of 10(6)-10(7) V cm(-1). The change of central metals in MPc has little effect on the transfer integrals, but significantly affects the reorganization energies. The extension of the pi-conjugation in macrocyclic ligand brings about considerable influence on the transfer integrals. Peripheral substitutions by animo, hydroxyl, and methyl lead to deviations from planarity of macromolecular rings, and hence affect the valence bands significantly. PMID:19123204

  17. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; Gunapala, S. D.

    1994-01-01

    Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

  18. Effect of π-π+ stacking on the layering of ionic liquids confined to an amorphous carbon surface.

    PubMed

    Gong, Xiao; Kozbial, Andrew; Rose, Franck; Li, Lei

    2015-04-01

    In the current paper, AFM studies were conducted on nanometer-thick ionic liquids (ILs) confined to an amorphous carbon (AC) surface, which is critical to the design of the next-generation media lubricant for hard disk drives (HDDs). The results indicated that the existence of the delocalized ring in the cation is critical to layering of ILs. Extended layering was observed only when there is imidazolium ring in the cation. When the imidazolium ring is replaced by an aliphatic moiety, "drop-on-layer" (dewetting) structure was observed. On the basis of the experimental results, we proposed that π-π+ stacking between sp(2) carbon in the AC and the imidazolium cation in the ILs is the key to the extended layering of ILs at the ILs/AC interface. PMID:25808335

  19. Anisotropy of Earth's D'' layer and stacking faults in the MgSiO3 post-perovskite phase.

    PubMed

    Oganov, Artem R; Martonák, Roman; Laio, Alessandro; Raiteri, Paolo; Parrinello, Michele

    2005-12-22

    The post-perovskite phase of (Mg,Fe)SiO3 is believed to be the main mineral phase of the Earth's lowermost mantle (the D'' layer). Its properties explain numerous geophysical observations associated with this layer-for example, the D'' discontinuity, its topography and seismic anisotropy within the layer. Here we use a novel simulation technique, first-principles metadynamics, to identify a family of low-energy polytypic stacking-fault structures intermediate between the perovskite and post-perovskite phases. Metadynamics trajectories identify plane sliding involving the formation of stacking faults as the most favourable pathway for the phase transition, and as a likely mechanism for plastic deformation of perovskite and post-perovskite. In particular, the predicted slip planes are {010} for perovskite (consistent with experiment) and {110} for post-perovskite (in contrast to the previously expected {010} slip planes). Dominant slip planes define the lattice preferred orientation and elastic anisotropy of the texture. The {110} slip planes in post-perovskite require a much smaller degree of lattice preferred orientation to explain geophysical observations of shear-wave anisotropy in the D'' layer. PMID:16372006

  20. Stacking fault energy of face-centered cubic metals: thermodynamic and ab initio approaches.

    PubMed

    Li, Ruihuan; Lu, Song; Kim, Dongyoo; Schönecker, Stephan; Zhao, Jijun; Kwon, Se Kyun; Vitos, Levente

    2016-10-01

    The formation energy of the interface between face-centered cubic (fcc) and hexagonal close packed (hcp) structures is a key parameter in determining the stacking fault energy (SFE) of fcc metals and alloys using thermodynamic calculations. It is often assumed that the contribution of the planar fault energy to the SFE has the same order of magnitude as the bulk part, and thus the lack of precise information about it can become the limiting factor in thermodynamic predictions. Here, we differentiate between the interfacial energy for the coherent fcc(1 1 1)/hcp(0 0 0 1) interface and the 'pseudo-interfacial energy' that enters the thermodynamic expression for the SFE. Using first-principles calculations, we determine the coherent and pseudo-interfacial energies for six elemental metals (Al, Ni, Cu, Ag, Pt, and Au) and three paramagnetic Fe-Cr-Ni alloys. Our results show that the two interfacial energies significantly differ from each other. We observe a strong chemistry dependence for both interfacial energies. The calculated pseudo-interfacial energies for the Fe-Cr-Ni steels agree well with the available literature data. We discuss the effects of strain on the description of planar faults via thermodynamic and ab initio approaches. PMID:27484794

  1. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  2. Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

    SciTech Connect

    Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali; Murugavel, R.; Rao, C.N.R.

    2015-04-15

    Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a few layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.

  3. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect

    Fadida, S. Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Kymissis, I.

    2014-10-28

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  4. Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

    NASA Astrophysics Data System (ADS)

    dos Santos, Renato B.; de Brito Mota, F.; Rivelino, R.; Kakanakova-Georgieva, A.; Gueorguiev, G. K.

    2016-04-01

    Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.

  5. Synthesis of Stacked-Cup Carbon Nanotubes in a Metal Free Low Temperature System

    NASA Technical Reports Server (NTRS)

    Kimura, Yuki; Nuth, Joseph A.; Johnson, Natasha M.; Farmer, Kevin D.; Roberts, Kenneth P.; Hussaini, Syed R.

    2011-01-01

    Stacked-cup carbon nanotubes were formed by either Fischer-Tropsch type or Haber Bosch type reactions in a metal free system. Graphite particles were used as the catalyst. The samples were heated at 600 C in a gas mixture of CO 75 Torr, N2 75 Torr and H2 550 Torr for three days. Trans mission electron microscope analysis of the catalyst surface at the completion of the experiment recognized the growth of nanotubes. They were 10-50 nm in diameter and approximately 1 micrometer in length. They had a hollow channel of 5-20 nm in the center. The nanotubes may have grown on graphite surfaces by the CO disproportionation reaction and the surface tension of the carbon nucleus may have determined the diameter. Although, generally, the diameter of a carbon nanotube depends on the size of the cataly1ic particles, the diameter of the nanotubes on graphite particles was independent of the particle size and significantly confined within a narrow range compared with that produced using catalytic amorphous iron-silicate nanoparticles. Therefore, they must have an unknown formation process that is different than the generally accepted mechanism.

  6. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-01

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  7. Impact Electrochemistry of Layered Transition Metal Dichalcogenides.

    PubMed

    Lim, Chee Shan; Tan, Shu Min; Sofer, Zdeněk; Pumera, Martin

    2015-08-25

    Layered transition metal dichalcogenides (TMDs) exhibit paramount importance in the electrocatalysis of the hydrogen evolution reaction. It is crucial to determine the size of the electrocatalytic particles as well as to establish their electrocatalytic activity, which occurs at the edges of these particles. Here, we show that individual TMD (MoS2, MoSe2, WS2, or WSe2; in general MX2) nanoparticles impacting an electrode surface provide well-defined current "spikes" in both the cathodic and anodic regions. These spikes originate from direct oxidation of the nanoparticles (from M(4+) to M(6+)) at the anodic region and from the electrocatalytic currents generated upon hydrogen evolution in the cathodic region. The positive correlation between the frequency of the impacts and the concentration of TMD nanoparticles is also demonstrated here, enabling determination of the concentration of TMD nanoparticles in colloidal form. In addition, the size of individual TMD nanoparticles can be evaluated using the charge passed during every spike. The capability of detecting both the "indirect" catalytic effect of an impacting TMD nanoparticle as well as "direct" oxidation indicates that the frequency of impacts in both the "indirect" and "direct" scenarios are comparable. This suggests that all TMD nanoparticles, which are electrochemically oxidizable (thus capable of donating electrons to electrodes), are also capable of catalyzing the hydrogen reduction reaction. PMID:26241193

  8. A study on stack configuration of continuous electrodeionization for removal of heavy metal ions from the primary coolant of a nuclear power plant.

    PubMed

    Yeon, Kyeong-Ho; Song, Jung-Hoon; Moon, Seung-Hyeon

    2004-04-01

    This study investigated the production of high-purity water in the primary coolant of a nuclear power plant via the continuous electrodeionization (CEDI) process, using ion exchange resins as ion-conducting media between ion exchange membranes. The effectiveness of this method was examined with respect to the removal of heavy metals. The study was carried out on a laboratory scale with an effective area of 20 cm(2). The CEDI system was operated with a layered bed of cation exchange resins, anion exchange resins, and mixed-bed ion exchange resins. The stack configuration was designed to prevent a reaction between metal ions and hydroxide ions. The CEDI operation with the layered bed removed more than 99% of the ions at 30% of the current efficiency. The results showed that, with an inlet conductivity of 40 microScm(-1), a linear velocity of 4.17 cms(-1), and an applied current density of 17 mAcm(-2), the CEDI process yielded an outlet conductivity of 0.5 microScm(-1), thereby preventing the precipitation of metal ions. This study therefore successfully demonstrated the feasibility of the CEDI operation for the removal of heavy metals at a very low concentration. PMID:15026246

  9. Photoinduced switching to metallic states in the two-dimensional organic Mott insulator dimethylphenazine-tetrafluorotetracyanoquinodimethane with anisotropic molecular stacks

    NASA Astrophysics Data System (ADS)

    Matsuzaki, Hiroyuki; Ohkura, Masa-aki; Ishige, Yu; Nogami, Yoshio; Okamoto, Hiroshi

    2015-06-01

    A photoinduced phase transition was investigated in an organic charge-transfer (CT) complex M2P -TCNQ F4 , [M2P : 5,10-dihydro-5,10-dimethylphenazine, donor (D) molecule; TCNQ F4 : 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, acceptor (A) molecule] by means of femtosecond pump-probe reflection spectroscopy. This is an ionic compound and has a peculiar two-dimensional (2D) molecular arrangement; the same A (or D) molecules arrange along the [100] direction, and A and D molecules alternately arrange along the [111] direction. It results in a strongly anisotropic two-dimensional electronic structure. This compound shows a structural and magnetic phase transition at 122 K below which the two neighboring molecules are dimerized along both the [100] and [111] directions. We demonstrate that two kinds of photoinduced phase transitions occur by irradiation of a femtosecond laser pulse; in the high-temperature lattice-uniform phase, a quasi-one-dimensional (1D) metallic state along the AA(DD) stack is generated, and in the low-temperature lattice-dimerized phase, a quasi-2D metallic state is initially produced and molecular dimerizations are subsequently released. Mixed-stack CT compounds consisting of DA stacks are generally insulators or semiconductors in the ground state. Here, such a dynamical metallization in the DA stack is demonstrated. The release of the dimerizations drives several kinds of coherent oscillations which play an important role in the stabilization of the lattice-dimerized phase. The mechanisms of those photoinduced phase transitions are discussed in terms of the magnitudes of the anisotropic bandwidths and molecular dimerizations along two different directions of the molecular stacks.

  10. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  11. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  12. The stacking interactions of bipyridine complexes: the influence of the metal ion type on the strength of interactions.

    PubMed

    Sredojević, Dušan N; Petrović, Predrag V; Janjić, Goran V; Brothers, Edward N; Hall, Michael B; Zarić, Snežana D

    2016-01-01

    The strength of the stacking interactions in the bipy complexes of nickel, palladium, and platinum, [M(CN)2 bipy]2 (M = Ni, Pd, Pt), was calculated using the ωB97xD/def2-TZVP method. The results show that for all considered geometries, interactions are the strongest for platinum, and weakest for nickel complexes, as a result of higher dispersion contributions of platinum over the palladium and nickel complexes. It was also shown that strength of interactions considerably rises with an increase of the stacking overlap area. As a consequence of the favorable electrostatic term, the strength of interactions also rises when metal atom and cyano ligands are involved in the overlap with bipy ligand. The strongest interaction was calculated in the platinum complex, for the geometry that has overlap of metal and cyano ligands with bipy ligand with an energy of -39.80 kcal mol(-1). The energies for similar geometries of palladium and nickel complexes are -34.60 and -32.45 kcal mol(-1). These energies, remarkably, exceed the strength of the stacking interactions between organic aromatic molecules. These results can be of importance in all systems with stacking interactions, from materials to biomolecules. PMID:26757913

  13. New layered metal oxides as positive electrode materials for room-temperature sodium-ion batteries

    NASA Astrophysics Data System (ADS)

    Mu, Lin-Qin; Hu, Yong-Sheng; Chen, Li-Quan

    2015-03-01

    In order to achieve better Na storage performance, most layered oxide positive electrode materials contain toxic and expensive transition metals Ni and/or Co, which are also widely used for lithium-ion batteries. Here we report a new quaternary layered oxide consisting of Cu, Fe, Mn, and Ti transition metals with O3-type oxygen stacking as a positive electrode for room-temperature sodium-ion batteries. The material can be simply prepared by a high-temperature solid-state reaction route and delivers a reversible capacity of 94 mAh/g with an average storage voltage of 3.2 V. This paves the way for cheaper and non-toxic batteries with high Na storage performance. Project supported by the National Natural Science Foundation of China (Grant Nos. 51222210 and 11234013) and the One Hundred Talent Project of the Chinese Academy of Sciences.

  14. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

    NASA Astrophysics Data System (ADS)

    Yen, Shiang-Shiou; Cheng, Chun-Hu; Lan, Yu-Pin; Chiu, Yu-Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Shao-Chin; Jiang, Zhe-Wei; Hung, Li-Yue; Tsai, Chi-Chung; Chang, Chun-Yen

    2016-04-01

    High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 µm 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology.

  15. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials – A general bond polarizability model

    PubMed Central

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Ying Quek, Su

    2015-01-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials. PMID:26469313

  16. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials--A general bond polarizability model.

    PubMed

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Quek, Su Ying

    2015-01-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical z(xx)z configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials. PMID:26469313

  17. Characterization of cylindrical terahertz metallic hollow waveguide with multiple dielectric layers.

    PubMed

    Sun, Bang-Shan; Tang, Xiao-Li; Zeng, Xuan; Shi, Yi-Wei

    2012-10-20

    Dielectric-coated metallic hollow waveguides (DMHW) are drawing considerable attention for their application in terahertz (THz) waveguiding. This paper theoretically analyzes the multilayer structure to reduce the transmission and bending loss of DMHW. The efficiency of THz multilayer DMHW depends on a proper selection of dielectric materials and geometrical parameters. The low-loss properties are demonstrated by studying the multilayer gold waveguides with a stack of polypropylene (PP) and Si-doped polypropylene (PP(Si)). Comparisons are made with single-layer Au/PP and Au-only waveguides. The effect of dielectric absorption is discussed in detail. It is found that low index dielectric causes more additional loss than that of high index dielectric layers. Several design considerations for the THz multilayer DMHW are pointed out by studying the effects of multilayer structure parameters with a stack of polyethylene (PE) and TiO(2)-doped polyethylene (PE(TiO2)). We conclude that the inner radius of the waveguide and the refractive indices of the dielectrics tend to be larger in order to reduce the influence of material absorption. An optimal value exists for the total number of layers when the dielectrics are absorptive. The absorption tolerances are pointed out to guarantee a smaller loss for multilayer DMHW than that of metal-only waveguide. Finally, a fabrication method for THz multilayer DMHW Ag/PE/PE(TiO2) is proposed based on co-rolling technique. PMID:23089782

  18. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  19. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  20. Identifying different stacking sequences in few-layer CVD-grown Mo S2 by low-energy atomic-resolution scanning transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Yan, Aiming; Chen, Wei; Ophus, Colin; Ciston, Jim; Lin, Yuyuan; Persson, Kristin; Zettl, Alex

    2016-01-01

    Atomically thin Mo S2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer Mo S2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer Mo S2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer Mo S2 displays a new stacking sequence distinct from the commonly observed 2 H and 3 R phases of Mo S2 . Density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

  1. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  2. Frictional sliding in layered rock: Preliminary experiments on stacked Lexan plates

    SciTech Connect

    Perry, K.E. Jr.; Epstein, J.S.; Jung, J.

    1995-12-31

    Understanding the mechanical behavior of jointed-rock masses is of critical importance to designing and predicting the performance of a potential nuclear waste repositiry. To this end we have studied the frictional sliding between simulated rock joints using phase shifting moire interferometry. Preliminary calibration models were made from stacks of Lexan plates that were sand-blasted to provide a uniform frictional interface. Load was applied monotonically and phase shifted moire fringe patterns were recorded at three different load states. Plots of slip along the interfaces for the model are presented to demonstrate the ability of the photomechanics technique to provide precise measurements of in-plane displacement, and ultimately the slip between the plates.

  3. Ordered stacking of F-actin layers and mixed lipid bilayers: a columnar liquid crystal.

    PubMed

    Caillé, A; Artzner, F; Amblard, F

    2013-01-25

    In this Letter, we show how the grooved helical structure of actin microfilaments (F-actin) interacting with mixed fluid lipid bilayers leads to handedness-independent 1D lipid bilayer undulations coupled to longitudinal in-plane ordering of the microfilaments. This longitudinal ordering is forced by the emerging in-plane compression and curvature energy terms of the straight 1D bilayer undulation wave fronts. Thereby, adjacent helices are set into registry along their long axis in their monolayer and π shifted between adjacent monolayers. An ordered composite multilamellar structure emerges by alternate stacking of these lipid bilayers and monolayers of F-actin. This two-dimensionally ordered system has the symmetries of a centered rectangular columnar liquid crystal, the straight 1D wave fronts playing the role of the classical molecular columns. PMID:25166203

  4. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

    NASA Astrophysics Data System (ADS)

    El Kazzi, M.; Czornomaz, L.; Rossel, C.; Gerl, C.; Caimi, D.; Siegwart, H.; Fompeyrine, J.; Marchiori, C.

    2012-02-01

    Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO2/1 nm Al2O3/1 nm a-Si gate stacks on p-In0.53Ga0.47As/InP (001) substrates. Thanks to the presence of the Al2O3 barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication process. The capacitors exhibit excellent electrical characteristics with scaled equivalent oxide thickness (EOT) of 0.89 nm and mid-gap interface state density of 5 × 1011 eV-1 cm-2 upon post-metallization anneal up to 550 °C. Gate-first, self-aligned MOS field-effect-transistors were fabricated with a similar 5 nm HfO2/1 nm Al2O3/1 nm a-Si gate stack and raised source and drain (600 °C for 30 min). Owing to the excellent thermal stability of the stack, no degradation of the gate stack/semiconductor interface is observed, as demonstrated by the excellent capacitance vs voltage characteristics and the good mobility values (peak at 1030 cm2 V-1 s-1 and 740 cm2 V-1 s-1 at carrier density of 6.5 × 1012 cm-2) for a 1.3 nm EOT.

  5. Molecular Interdiffusion between Stacked Layers by Solution and Thermal Annealing Processes in Organic Light Emitting Devices.

    PubMed

    Ohisa, Satoru; Pu, Yong-Jin; Yamada, Norifumi L; Matsuba, Go; Kido, Junji

    2015-09-23

    In organic light emitting devices (OLEDs), interfacial structures between multilayers have large impacts on the characteristics of OLEDs. Herein, we succeeded in revealing the interdiffusion in solution processed and thermal annealed OLEDs by neutron reflectometry. We investigated interfaces between a polymer under layer and small molecules upper layer. The small molecules diffused into the swollen polymer layer during the interfacial formation by the solution process, but the polymer did not diffuse into the small molecules layer. At temperatures close to the glass transition temperatures of the materials, asymmetric molecular diffusion was observed. We elucidated the effects of the interdiffusion on the characteristics of OLEDs. Partially mixing the interface improved the current efficiencies due to suppressed triplet-polaron quenching at the interface. Controlling and understanding the interfacial structures of the miultilayers will be more important to improve the OLED characteristics. PMID:26331696

  6. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    SciTech Connect

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; LeSar, Richard

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into two distinct regimes corresponding to 'low' and 'high' stacking fault energies.

  7. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    DOE PAGESBeta

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; LeSar, Richard

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into twomore » distinct regimes corresponding to 'low' and 'high' stacking fault energies.« less

  8. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  9. Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

    NASA Astrophysics Data System (ADS)

    Lutsenko, E. V.; Rzheutski, M. V.; Pavlovskii, V. N.; Yablonskii, G. P.; Alanzi, M.; Hamidalddin, A.; Alyamani, A.; Mauder, C.; Kalisch, H.; Reuters, B.; Heuken, M.; Vescan, A.; Naresh-Kumar, G.; Trager-Cowan, C.

    2016-01-01

    The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO2 (100) substrates were investigated. Temperature-dependent and time-resolved photoluminescence (PL), X-ray diffraction and Raman scattering measurements were performed to analyze the correlation of the sample properties with the density of I1-type basal-plane stacking faults (BSFs). Electron channeling contrast imaging was used to reveal and calculate the density of BSFs reaching the surface of an m-plane GaN/LiAlO2 layer. It was shown that a local increase of BSF density in the investigated samples results in a rise of the total PL efficiency at low temperatures because of the localization of excitons at BSFs and, therefore, a suppression of their diffusion to nonradiative centers. Parameters of time decay and temperature quenching of the BSF-related PL band were determined. A correlation of both εxx and εzz strain components with the BSFs and crystal mosaicity was observed, and possible reasons of this correlation are discussed.

  10. Thermal and optical stability of injected charge in stacked dielectric layers

    NASA Astrophysics Data System (ADS)

    Wrana, M.; Schmidt, M.; Bräunig, D.

    1997-04-01

    Dielectric layer configurations of silicon dioxide/silicon nitride and silicon dioxide/silicon nitride/silicon dioxide were used to build up accumulation layers for back surface fields as well as inversion layers for inversion-layer solar cells. The silicon nitride was prepared by plasma-enhanced or low-pressure chemical vapour deposition. The high neutral trap concentration (0268-1242/12/4/004/img1) of the silicon nitride layer was utilized to increase the fixed charge, because these traps could be negatively charged by electron injection (photoinjection during an applied bias) or positively charged by photo-depopulation. The traps were charged/discharged by the irradiation of a deuterium lamp (4 eV to 6 eV) and the injected charge was measured by high-frequency capacitance - voltage measurements. We investigated the stability of injected charge with respect to temperature 0268-1242/12/4/004/img2 and optical degradation below air mass 1.5 condition (AM1.5). To explain the stability behaviour, we determined the band-offsets. Temperature stability could be confirmed for all examined configurations, but optical stability was seen only for the system 0268-1242/12/4/004/img3.

  11. Piezo-stack vortex generators for boundary layer control of a delta wing micro-aerial vehicle

    NASA Astrophysics Data System (ADS)

    Mystkowski, Arkadiusz

    2013-11-01

    This paper presents an idea for the control of flow separation over solid surfaces by piezo-stack vortex generators. The vortex generators are small vibrating plates attached to the delta wing surface. A model of the micro-aerial vehicle (MAV) controlled by vortex piezo-generators is presented. The vortex generators are applied to produce the appropriate aerodynamical forces and moments controlling the flight of the aircraft. The efficiency of the vortex generators is proved by the wind tunnel test results. The oscillatory added lift and drag coefficients versus angle of attack are presented. The optimal vortex generator amplitude and frequency are investigated. Boundary layer control (BLC) for delta wing micro-aircraft increases the manoeuvrability and performance of the MAV.

  12. Resonant interaction of light with a stack of alternating layers of a cholesteric liquid crystal and an isotropic medium

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.

    2015-12-01

    Resonance properties of a stack consisting of a cholesteric liquid crystal and isotropic medium layers are investigated. Bragg's conditions for photonic band gaps are presented for the considered system. It is shown that a significant control of the system zone structure is possible in the case of a proper selection of the sublayer parameters. It is also shown that an effect of complete suppression of absorption is not usually observed in the case of anisotropic absorption in cholesteric liquid crystal sublayers. The possibility to achieve this effect in the considered system, imposing certain conditions on the thickness and the refraction index of the isotropic medium sublayers, is shown. Also, it is shown that in such conditions a large increase of the maximum of photonic density of states happens at the appropriate zone borders.

  13. Hard X-ray photoemission experiments on novel Ge-based metal gate/high-k stacks

    NASA Astrophysics Data System (ADS)

    Rubio-Zuazo, J.; Martinez, E.; Batude, P.; Clavelier, L.; Soria, F.; Chabli, A.; Castro, G. R.

    2007-09-01

    The scaling of CMOS devices makes mandatory the study of new materials to overcome the physical limitations of the Si technology. Germanium is a good candidate to replace silicon for the channel to improve the carrier mobility. High-K dielectrics such as HfO2 are investigated to replace the gate oxide (SiO2) to decrease both leakage currents and EOT. For the gate electrode, it is also crucial to move from poly-silicon to a metal gate like TiN to adjust work function and to suppress poly-depletion in order to decrease EOT. However, to reach optimal device performances, both the Ge/high-K and high-K/TiN interfaces need to be optimized. In order to passive and prevent Ge oxidation we have deposited a very thin Si interlayer prior to the high-k growth. A thin Si layer (Si capping) is epitaxially grown on Ge and then partially oxidized before high-k deposition. The exact control of the Si capping layer is of major importance. It must be enough thick to prevent germanium oxidation when the partial oxidation of Si is realized and as low as possible in order to keep the benefit of the better transport properties in germanium. In this contribution, we present non-destructive chemical and concentration profile of both critical buried interfaces by mean of Hard X-ray Photoelectron Spectroscopy (HAXPES) of a Ge/Si/SiO2/HfO2/TiN stack, with thickness of 2500, 0.9, 0.5, 4 and 4 nm, respectively. Experiments are performed at the SpLine HAXPES station of the ESRF equipped with a novel photoemission set-up in combination with surface X-ray diffraction (SXRD). The profiles obtained clearly show that the Si interlayer prevents the Ge oxidation and the presence of a new Hf state which is related to an interface chemical shift. Our results demonstrate the excellent capability of HAXPES to study buried interfaces.

  14. Compositional modulated atomic layer stacking and uniaxial magnetocrystalline anisotropy of CoPt alloy sputtered films with close-packed plane orientation

    SciTech Connect

    Saito, Shin Nozawa, Naoki; Hinata, Shintaro; Takahashi, Migaku; Shibuya, Kazunari; Hoshino, Kazuya; Awaya, Satoru

    2015-05-07

    An atomic layer stacking structure in hexagonal close packed (hcp) Co{sub 100−x}Pt{sub x} alloy films with c-plane sheet texture was directly observed by a high-angle annular dark-field imaging scanning transmission electron microscopy. The analysis of sequential and/or compositional atomic layer stacking structure and uniaxial magnetocrystalline anisotropy (K{sub u} = K{sub u1} + K{sub u2}) revealed that (1) integrated intensity of the superlattice diffraction takes the maximum at x = 20 at. % and shows broadening feature against x for the film fabricated under the substrate temperature (T{sub sub}) of 400 °C. (2) Compositional separation structure in atomic layers is formed for the films fabricated under T{sub sub} = 400 °C. A sequential alternative stacking of atomic layers with different compositions is hardly formed in the film with x = 50 at. %, whereas easily formed in the film with x = 20 at. %. This peculiar atomic layer stacking structure consists of in-plane-disordered Pt-rich and Pt-poor layers, which is completely different from the so-called atomic site ordered structure. (3) A face centered cubic atomic layer stacking as faults appeared in the host hcp atomic layer stacking exists in accompanies with irregularities for the periodicity of the compositional modulation atomic layers. (4) K{sub u1} takes the maximum of 1.4 × 10{sup 7 }erg/cm{sup 3} at around x = 20 at. %, whereas K{sub u2} takes the maximum of 0.7 × 10{sup 7 }erg/cm{sup 3} at around x = 40 at. %, which results in the maximum of 1.8 × 10{sup 7 }erg/cm{sup 3} of K{sub u} at x = 30 at. % and a shoulder in compositional dependence of K{sub u} in the range of x = 30–60 at. %. Not only compositional separation of atomic layers but also sequential alternative stacking of different compositional layers is quite important to improve essential uniaxial magnetocrystalline anisotropy.

  15. About the strain state of different metal oxide layers epitaxially grown on Si(1 1 1)

    NASA Astrophysics Data System (ADS)

    Zaumseil, P.; Schroeder, T.

    2011-02-01

    The strain state of metal oxides Pr2O3, Y2O3 and Sc2O3 used as buffer material in different heteroepitaxially grown semiconductor-oxide-Si(1 1 1) layer stacks was studied by x-ray diffraction techniques at room temperature (RT) and near the growth temperature of 625 °C. A broad spectrum of different strain states was found depending on preparation conditions, layer combination and layer thickness. Pr2O3 behaves differently from the other two investigated oxides as it grows in a hexagonal phase on Si(1 1 1) and must be transformed into the stable cubic phase by annealing processes. This transformation is accompanied by the creation of an amorphous silicate interface layer that leads to a decoupling of substrate and oxide lattices and finally to a partial relaxation of the cub-Pr2O3 layer only. High-temperature measurements demonstrate that there exists a measurable difference between the strain state at RT, where x-ray measurements are typically performed, and at growth temperature. The coefficient of thermal expansion of different metal oxides was measured in thin film structures for the first time. These coefficients are significantly higher compared with that of Si, which leads to an additional tensile strain component when the samples are cooled down to RT.

  16. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    NASA Astrophysics Data System (ADS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-04-01

    Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  17. The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-05-01

    Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon—disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

  18. Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes.

    PubMed

    Soni, Rohit; Meuffels, Paul; Petraru, Adrian; Hansen, Mirko; Ziegler, Martin; Vavra, Ondrej; Kohlstedt, Hermann; Jeong, Doo Seok

    2013-12-21

    Bipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx-Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current-voltage (I-V) hysteresis of ECM cells whereas Type 2 ECM cell, Pt (bottom electrode)/Ge0.3Se0.7/SiOx/Cu(top electrode), showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in Type 2 cell is lower than that in Type 1 cell while on-switching voltage in both cells is almost the same. An attempt to understand this electrolyte-stack-sequence-depending switching polarity reversal was made in terms of the ECM cell potential change upon the electrolyte stack sequence and the consequent change in Cu filament growth direction. Relevant experimental evidence for the hypothesis was obtained regarding the switching behaviours. Furthermore, given the switching polarity reversal, feasibility of serial complementary resistive switches was also demonstrated. PMID:24177268

  19. Energy dissipation in intercalated carbon nanotube forests with metal layers

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Vertically aligned carbon nanotube (CNT) forests were synthesized to study their quasi-static mechanical properties in a layered configuration with metallization. The top and bottom surfaces of CNT forests were metalized with Ag, Fe, and In using paste, sputtering, and thermal evaporation, respectiv...

  20. Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

    NASA Astrophysics Data System (ADS)

    Semmelroth, K.; Berwian, P.; Schröter, C.; Leibiger, G.; Schönleber, M.; Friedrich, J.

    2015-10-01

    For improved real-time process control we integrated a novel optical in-situ monitoring system in a vertical reactor for hydride vapor phase epitaxy (HVPE) growth of gallium nitride (GaN) bulk crystals. The in-situ monitoring system consists of a fiber-optical interferometric sensor in combination with an optimized differential measuring head. The system only needs one small optical path perpendicular to the center of the layer stack typically consisting of sapphire as substrate and GaN. It can handle sample distances up to 1 m without difficulty. The in-situ monitoring system is simultaneously measuring the optical layer thicknesses of the GaN/sapphire layer stack and the absolute change of the distance between the measuring head and the backside of the layer stack. From this data it is possible to calculate the thickness of the growing GaN up to a thickness of about 1000 μm and the absolute change in curvature of the layer stack. The performance of the in-situ monitoring system is shown and discussed based on the measured interference signals recorded during a short-time and a long-time HVPE growth run.

  1. Layer-by-layer synthesis of metal-containing conducting polymers: caged metal centers for interlayer charge transport.

    PubMed

    Liu, Wenjun; Huang, Weijie; Pink, Maren; Lee, Dongwhan

    2010-09-01

    Metal-templated [2 + 3]-type cocondensation of a pi-extended boronic acid and nioxime furnished a series of cage molecules, which were electropolymerized to prepare metal-containing conducting polymers (MCPs). Despite sharing essentially isostructural organic scaffolds, these materials display metal-dependent electrochemical properties as evidenced by different redox windows observed for M = Co, Fe, Ru. Consecutive electropolymerization using two different monomers furnished bilayer MCPs having different metals in each layer. In addition to functioning as heavy atom markers in cross-sectional analysis by FIB and EDX, redox-active metal centers participate in voltage-dependent interlayer electron transport to give rise to cyclic voltammograms that are distinctively different from those of each layer alone or random copolymers. A simple electrochemical technique can thus be used as a straightforward diagnostic tool to investigate the structural ordering of electrically conductive layered materials. PMID:20690667

  2. The mesospheric metal layer topside: a possible connection to meteoroids

    NASA Astrophysics Data System (ADS)

    Höffner, J.; Friedman, J. S.

    2004-05-01

    In the past, many studies have been carried out to demonstrate the influence of meteoroids on the atmospheric metal layer, observed roughly in the altitude range 80-105 km. Even with the capability of present day resonance lidars to measure metal densities within single meteor trails, it has been difficult to prove any influence of meteors on the average metal layer. In contrast to approaches taken earlier, we discuss here the seasonal characteristics of potassium, calcium, calcium ion, iron and sodium above 110 km altitude where the average nocturnal densities are so low that the existence of a baseline level of metal atoms and ions is often overlooked. By comparing simultaneous and common-volume observations of different metal layers at one location, we demonstrate that despite their different seasonal characteristics at lower altitudes remarkably similar seasonal characteristics are observed at higher altitudes. In addition, a qualitative agreement is also found for potassium at different latitudes. A comparison of metal densities at 113 km altitude with known meteor showers indicates a strong influence of shower meteoroids on the topside of the metal layers. Simultaneous observations of K along with Ca, Fe and/or Na permit the calculation of abundance ratios, which at 113 km altitude are quite similar to values measured in single meteor trails by ground based lidars. Furthermore, the increase in densities throughout summer is strong evidence for the influence of sporadic meteoroids on the high metal layers. This increase correlates well with the seasonal variation of sporadic micrometeor input independent of meteor showers. Given these evidences, we contend that there is a direct influence of ablating meteoroids on the topside of the mesospheric metal layer.

  3. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    NASA Astrophysics Data System (ADS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-04-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green's functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green's function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  4. Two-dimensionally stacked heterometallic layers hosting a discrete chair dodecameric ring of water clusters: synthesis and structural study.

    PubMed

    Kenfack Tsobnang, Patrice; Wenger, Emmanuel; Biache, Coralie; Lambi Ngolui, John; Ponou, Siméon; Dahaoui, Slimane; Lecomte, Claude

    2014-10-01

    The stacked two-dimensional supramolecular compound catena-{Co(amp)3Cr(ox)3·6H2O} (amp = 2-picolylamine, ox = oxalate) has been synthesized from the bimolecular approach using hydrogen bonds. It is built from layers in which both Co(amp)(3+) (D) and Cr(ox)(3-) (A) ions are bonded in a repeating DADADA… pattern along the a and c axes by multiple hydrogen bonds. These layers host a well resolved R12 dodecameric discrete ring of water clusters built by six independent molecules located around the 2c centrosymmetric Wyckoff positions of the P21/n space group in which the compound crystallizes. These clusters are ranged along the [001] direction, occupy 733.5 Å(3) (22.0%) of the unit cell and have a chair conformation via 12 hydrogen bonds. The water molecules of the cluster are linked with stronger hydrogen bonds than those between the cluster and its host, which explains the single continuous step of the dehydration process of the compound. PMID:25274525

  5. Closed and open-ended stacking fault tetrahedra formation along the interfaces of Cu-Al nanolayered metals

    NASA Astrophysics Data System (ADS)

    Li, Ruizhi; Beng Chew, Huck

    2015-09-01

    Stacking fault tetrahedra (SFTs) are volume defects that typically form by the clustering of vacancies in face-centred cubic (FCC) metals. Here, we report a dislocation-based mechanism of SFT formation initiated from the semi-coherent interfaces of Cu-Al nanoscale multilayered metals subjected to out-of-plane tension. Our molecular dynamics simulations show that Shockley partials are first emitted into the Cu interlayers from the dissociated misfit dislocations along the Cu-Al interface and interact to form SFTs above the triangular intrinsic stacking faults along the interface. Under further deformation, Shockley partials are also emitted into the Al interlayers and interact to form SFTs above the triangular FCC planes along the interface. The resulting dislocation structure comprises closed SFTs within the Cu interlayers which are tied across the Cu-Al interfaces to open-ended SFTs within the Al interlayers. This unique plastic deformation mechanism results in considerable strain hardening of the Cu-Al nanolayered metal, which achieves its highest tensile strength at a critical interlayer thickness of ~4 nm corresponding to the highest possible density of complete SFTs within the nanolayer structure.

  6. Modeling of the effective work function instability in metal/high-κ dielectric stacks

    NASA Astrophysics Data System (ADS)

    Fet, A.; Häublein, V.; Bauer, A. J.; Ryssel, H.; Frey, L.

    2010-06-01

    This paper discusses the effective work function instability in high-κ-based MOS gate stacks, which occurs after high temperature (1070 °C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The Vfb roll-off effect is also discussed and can be described by the model.

  7. Method of adhesion between an oxide layer and a metal layer

    DOEpatents

    Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

    2004-09-14

    A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

  8. A further comparison of graphene and thin metal layers for plasmonics.

    PubMed

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-21

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters. PMID:27138936

  9. Investigation of fade-out mechanism of resonance modes in optical transmission using stacked metallic sub-wavelength slit arrays

    NASA Astrophysics Data System (ADS)

    Tokuda, Yasunori; Sakaguchi, Koichiro; Takano, Keisuke; Fukushima, Takehiro; Hangyo, Masanori

    2014-06-01

    We investigated the behavior of optical transmission modes in stacked systems composed of metallic sub-wavelength slit-array plates separated by air gaps using simulations based on the finite-difference time-domain method. In double- and triple-stacked structures without a lateral displacement between the plates, the Fabry-Perot-like waveguide resonance modes are classified according to whether the resonance frequencies depend strongly on the air-gap spacing. By introducing a lateral displacement of the plates for both double- and triple-stacked structures, we found that the modes of one category, which were barely affected by changes in the air-gap spacing without the displacement, vary their resonance frequencies considerably when the optical paths are extremely narrow within the air-gap regions and, then, rapidly but continuously attenuate through mixing with the modes of the other category. We demonstrate that this marked behavior results from a manifest distortion in the spatial distribution of the electromagnetic fields for the modes of the first category, induced by the boundary condition at the slit ends changing from open-open to open-closed. Although all resonance modes in the two-tier system disappear continuously through cooperative mode mixing, some modes remain in the three-tier system that vanishes independently and discontinuously as the optical paths become blocked. These findings are indispensable for practical applications and for gaining a deeper understanding of this type of metamaterial.

  10. Graphene-GaAs-graphene stacked layers for the improvement of the transmission at the wavelength of 1.55 μm

    NASA Astrophysics Data System (ADS)

    Ajlani, Hosni; Azizi, Mohamed Karim; Gharsallah, Ali; Oueslati, Meherzi

    2016-07-01

    Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which initially exhibit only 30% transmission at 1.55 μm, allows the active control of the transmission by the adjustment of the graphene chemical potential. Transmission of almost 100% at the wavelength of 1.55 μm is achieved after addition of graphene layers. These results show the potential role of stacked graphene-GaAs-graphene layers in the development of new optical active communications devices.

  11. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    NASA Astrophysics Data System (ADS)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  12. Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process

    SciTech Connect

    Peng, Kun; Jiang, Pan; Zhu, Jiajun; Zhou, Lingping; Li, Deyi

    2014-12-15

    Graphical abstract: Layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared. - Highlights: • Novel hexagonal layer-stack structure CdO micro-rods were synthesized by a thermal evaporation method. • The pre-oxidation, vapor pressure and substrate nature play a key role on the formation of CdO rods. • The formation mechanism of CdO micro-rods was explained. - Abstract: Novel layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared by pre-oxidizing Cd granules and subsequent thermal oxidation under normal atmospheric pressure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to characterize the phase structure and microstructure. The pre-oxidation process, vapor pressure and substrate nature were the key factors for the formation of CdO micro-rods. The diameter of micro-rod and surface rough increased with increasing of thermal evaporation temperature, the length of micro-rod increased with the increasing of evaporation time. The formation of hexagonal layer-stack structure was explained by a vapor–solid mechanism.

  13. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  14. Single-layer transition metal sulfide catalysts

    DOEpatents

    Thoma, Steven G.

    2011-05-31

    Transition Metal Sulfides (TMS), such as molybdenum disulfide (MoS.sub.2), are the petroleum industry's "workhorse" catalysts for upgrading heavy petroleum feedstocks and removing sulfur, nitrogen and other pollutants from fuels. We have developed an improved synthesis technique to produce SLTMS catalysts, such as molybdenum disulfide, with potentially greater activity and specificity than those currently available. Applications for this technology include heavy feed upgrading, in-situ catalysis, bio-fuel conversion and coal liquefaction.

  15. Direct current voltage generated in metallic layers by spin pumping

    NASA Astrophysics Data System (ADS)

    Vilela-Leão, L. H.; da Silva, G. L.; Salvador, C.; Rezende, S. M.; Azevedo, A.

    2011-04-01

    We report an investigation of the dc voltage generated in a normal-metal (NM) layer by spin pumping from an adjacent ferromagnetic (FM) layer under ferromagnetic resonance (FMR) excitation. The spin-current injected across the FM/NM interface by the spin pumping effect generates a charge current along the NM layer by means of the inverse spin Hall effect. Room temperature field scan measurements were made in a series of Ni81Fe19/Pt bilayers with several thicknesses of the FM and Pt layers. By varying the angle of the in-plane magnetization we are able to accurately separate the contributions arising from anisotropic magnetoresistance and from the spin-current pumped into the NM layer by the precessing magnetization of the FM layer. The data for the spin pumping dc voltage is in excellent agreement with a theory incorporating the full dependence on the thicknesses of the FM and NM layers.

  16. Stacking of adjacent graphene layers grown on C-face SiC

    NASA Astrophysics Data System (ADS)

    Johansson, L. I.; Watcharinyanon, S.; Zakharov, A. A.; Iakimov, T.; Yakimova, R.; Virojanadara, C.

    2011-09-01

    Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimation with Ar as the buffer inert gas. The results of studies of the morphology, thickness, and electronic structure of these samples using low-energy electron microscopy (LEEM), x-ray photoelectron emission microscopy, photoelectron spectroscopy, angle-resolved photoelectron spectroscopy (ARPES), and low-energy electron diffraction (LEED) are presented. The graphene thickness is determined to vary from 1 or 2 to 6 or 7 monolayers (MLs), depending on the specific growth conditions utilized. The formation of fairly large grains (i.e., crystallographic domains) of graphene exhibiting sharp 1×1 spots in micro-LEED is revealed. Adjacent grains are found to show different azimuthal orientations. Macro-LEED patterns recorded mimic previously published, strongly modulated, diffraction ring LEED patterns, indicating contribution from several grains of different azimuthal orientations. We collected selected area constant initial energy photoelectron angular distribution patterns that show the same results. When utilizing a small aperture size, one Dirac cone centered on each of the six K-points in the Brillouin zone is clearly resolved. When using a larger aperture, several Dirac cones from differently oriented grains are detected. Our findings thus clearly show the existence of distinct graphene grains with different azimuthal orientations; they do not show adjacent graphene layers are rotationally disordered, as previously reported for C-face graphene. The graphene grain size is shown to be different on the different samples. In some cases, a probing area of 400 nm is needed to detect the grains. On one sample, a probing area of 5 μm can be used to collect a 1×1 LEED pattern from a multilayer graphene grain. ARPES is used to determine the position of the Dirac point relative to the Fermi level on two samples that LEEM shows have dominant coverage of 2 and 3 MLs of graphene

  17. Direct determination of the stacking order in Gd{sub 2}O{sub 3} epi-layers on GaAs.

    SciTech Connect

    Yacoby, Y.; Sowwan, M.; Pindak, R.; Cross, J.; Walko, D.; Stern, E.; Pitney, J.; MacHarrie, R.; Hong, M.; Clarke, R.; Experimental Facilities Division; Hebrew Univ.; BNL; Univ. of Washington; Bell Lab Agere Stystems; Univ. of Michigan

    2003-01-01

    We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.

  18. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  19. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study. PMID:25852428

  20. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  1. Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator.

    PubMed

    Lu, Zhixing; Sun, Lifei; Xu, Guanchen; Zheng, Jingying; Zhang, Qi; Wang, Jingyi; Jiao, Liying

    2016-05-24

    Chemical vapor deposition (CVD) has shown great potential in synthesizing various high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, the nondestruction transfer of these CVD-grown 2D TMDCs at a high yield remains a key challenge for applying these emerging materials in various aspects. To address this challenge, we designed a water-soluble transfer mediator consisting of two polymers, polyvinylpyrrolidone (PVP) and poly(vinyl alcohol) (PVA), which can form strong interactions with CVD-grown 2D TMDCs for the nondestruction transfer of these materials. With this mediator, we realized the physical transfer of CVD-grown MoS2 flakes and several other 2D TMDCs, including 2D alloys and heterostructures to a wide range of substrates at a high yield of >90% with well-retained properties as evidenced by various microscopic, spectroscopic, and electrical measurements. Field-effect transistors (FETs) made on thus-transferred CVD-grown MoS2 monolayers exhibited obviously higher mobility than those transferred by chemical method. We also constructed several artificial 2D crystals showing very strong interlayer coupling by the multiple transfer of CVD-grown 2D TMDCs monolayers with this approach. This transfer approach will make versatile CVD-grown 2D materials and their artificial stacks with pristine qualities easily accessible for both fundamental studies and practical applications. PMID:27158832

  2. Methods of Fabricating a Layer of Metallic Glass-Based Material Using Immersion and Pouring Techniques

    NASA Technical Reports Server (NTRS)

    Hofmann, Douglas (Inventor)

    2015-01-01

    Systems and methods in accordance with embodiments of the invention implement layers of metallic glass-based materials. In one embodiment, a method of fabricating a layer of metallic glass includes: applying a coating layer of liquid phase metallic glass to an object, the coating layer being applied in a sufficient quantity such that the surface tension of the liquid phase metallic glass causes the coating layer to have a smooth surface; where the metallic glass has a critical cooling rate less than 1000 K/s; and cooling the coating layer of liquid phase metallic glass to form a layer of solid phase metallic glass.

  3. Multi-Scale Mechanical Probing Techniques To Investigate The Stability Of BEOL Layer Stacks With Sub-100 nm Structures

    NASA Astrophysics Data System (ADS)

    Geisler, Holm; Lehr, Matthias U.; Platz, Alexander; Mayer, Ulrich; Hofmann, Petra; Engelmann, Hans-Jürgen

    2011-09-01

    The stress levels induced by chip-package interaction (CPI) impose an increased risk of mechanical failure on advanced backend-of-line (BEOL) layer stacks in microelectronic circuits if they contain fragile ultralow-k (ULK) interlayer dielectric (ILD) films. On the one hand, multilevel finite element modeling is used to assess the potential risk at an early stage of the development of new microelectronic products. On the other hand, the theoretical models need as accurate as possible materials parameters as an input to provide realistic results. Moreover, it is highly desirable to have multi-scale experimental probes available which can provide complementary data to support the modeling calculations. The present paper provides an overview about various mechanical probing techniques which operate on the scale of less than 100 nm up to more than 100 μm. In this way, typical feature sizes are covered which occur from the package level via solder bumps or copper pillars down to small Cu/ULK interconnect structures. The experimental approaches are based on nanoindentation with lateral force detection and in-situ scanning probe microscopy (SPM) imaging capabilities, and they include a novel technique named bump assisted BEOL stability indentation (BABSI) test. Especially, the interrelation between small-scale mechanical properties of ULK dielectric films and stresses acting on larger scales are quantitatively assessed by means of the experimental approaches described here.

  4. The Thermomagnetic Instability in Superconducting Films with Adjacent Metal Layer

    NASA Astrophysics Data System (ADS)

    Vestgården, J. I.; Galperin, Y. M.; Johansen, T. H.

    2013-12-01

    Dendritic flux avalanches is a frequently encountered consequence of the thermomagnetic instability in type-II superconducting films. The avalanches, which are potentially harmful for superconductor-based devices, can be suppressed by an adjacent normal metal layer, even when the two layers are not in thermal contact. The suppression of the avalanches in this case is due to so-called magnetic braking, caused by eddy currents generated in the metal layer by propagating magnetic flux. We develop a theory of magnetic braking by analyzing coupled electrodynamics and heat flow in a superconductor-normal metal bilayer. The equations are solved by linearization and by numerical simulation of the avalanche dynamics. We find that in an uncoated superconductor, even a uniform thermomagnetic instability can develop into a dendritic flux avalanche. The mechanism is that a small non-uniformity caused by the electromagnetic non-locality induces a flux-flow hot spot at a random position. The hot spot quickly develops into a finger, which at high speeds penetrates into the superconductor, forming a branching structure. Magnetic braking slows the avalanches, and if the normal metal conductivity is sufficiently high, it can suppress the formation of the dendritic structure. During avalanches, the braking by the normal metal layer prevents the temperature from exceeding the transition temperature of the superconductor. Analytical criteria for the instability threshold are developed using the linear stability analysis. The criteria are found to match quantitatively the instability onsets obtained in simulations.

  5. Divergent layer topologies in divalent metal aliphatic dicarboxylate coordination polymers containing 3-pyridylmethylnicotinamide

    NASA Astrophysics Data System (ADS)

    White, Charmaine L.; Torres Salgado, Maria D.; Mizzi, Jessica E.; LaDuca, Robert L.

    2015-12-01

    Hydrothermal reaction of the requisite metal salt, an aliphatic dicarboxylic acid, and the hydrogen-bonding capable dipyridylamide ligand 3-pyridylmethylnicotinamide (3-pmna) resulted in four coordination polymers whose connectedness and layer topology depend on the metal coordination environment and dicarboxylate binding mode. These new crystalline phases were characterized by single crystal X-ray diffraction. [Cu(ox)(3-pmna)]n (1, ox = oxalate) manifests stacked 3-connected (6,3) herringbone layer motifs. {[Cd(mal)(3-pmna)(H2O)]·3H2O}n (2, mal = malonate) shows a 4-connected (4,4) grid topology with entrained water molecule trimeric chains in the interlamellar regions. {[Cd2(suc)2(3-pmna)(H2O)2]·3H2O}n (3, suc = succinate) possesses {Cd2O2} dimer-based [Cd(suc)]n layers pillared by 3-pmna ligands into a 5-connected sandwich motif with 4862 topology. {[Cd(glu)(3-pmna)(H2O)]·3H2O}n (4, glu = glutarate) manifests a rippled (4,4) grid topology. Luminescent behavior in the cadmium complexes is ascribed to intra-ligand molecular orbital transitions. Thermal decomposition behavior is also discussed herein.

  6. Contacts and transport characteristics of few-layer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Wang, Junjie; Li, Jing; Shevrin, Jacob; Nguyen, An; Mallouk, Tom; Zhu, J.; Rhodes, Daniel; Balicas, Luis; Watanabe, K.; Taniguchi, T.

    2014-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) are potentially useful for electronic and optoelectronic applications. However, the lack of reliable methods to make ohmic contacts has been a major challenge. This work addresses two aspects of this challenge, i.e. interface cleanness and conductivity of the material in the contact area. Using gentle Ar ion milling immediately before the deposition of metal electrodes, we can completely remove polymer residue from prior lithography without significantly damaging the few-layer TMD sheet. Gate stacks made of Au and HfO2 films can inject carriers up to 3 ×1013 cm-2. We make van der Pauw devices of few-layer (< 5 L) TMD (MoS2, WS2, WSe2) sheets using Ti/Au contacts with area < 2 (um)2 and observe contact resistance less than 10 k Ω at high carrier densities, where the sheet conductance is well above 2e2/h. We eliminate hysteresis in the transfer curve of TMD devices by pulsing the gate voltage. Ambipolar conduction is observed in WSe2 devices, with an on/off ratio exceeding 106 for both electrons and holes. WSe2 devices supported on h-BN show field-effect (hole) mobility > 100 cm2/(Vs) at 300K. We discuss the effects of the various approaches taken above.

  7. Chromospheric, transition layer and coronal emission of metal deficient stars

    NASA Technical Reports Server (NTRS)

    Boehm-Vitense, E.

    1982-01-01

    It is shown that while MgII k line emission decreases for metal deficient stars, the Ly alpha emission increases. The sum of chromospheric hydrogen and metallic emission appears to be independent of metal abundances. The total chromospheric energy loss is estimated to be 0.0004 F sub bol. The chromospheric energy input does not seem to decrease for increasing age. The transition layer emission is reduced for metal deficient stars, but it is not known whether the reduction is larger than can be explained by curve of growth effects only. Coronal X-ray emission was measured for 4 metal deficient stars. Within a 12 limit it could still be consistent with the emission of solar abundance stars.

  8. Growth of transition metals on cerium tungstate model catalyst layers.

    PubMed

    Skála, T; Tsud, N; Stetsovych, V; Mysliveček, J; Matolín, V

    2016-10-01

    Two model catalytic metal/oxide systems were investigated by photoelectron spectroscopy and scanning tunneling microscopy. The mixed-oxide support was a cerium tungstate epitaxial thin layer grown in situ on the W(1 1 0) single crystal. Active particles consisted of palladium and platinum 3D islands deposited on the tungstate surface at 300 K. Both metals were found to interact weakly with the oxide support and the original chemical state of both support and metals was mostly preserved. Electronic and morphological changes are discussed during the metal growth and after post-annealing at temperatures up to 700 K. Partial transition-metal coalescence and self-cleaning from the CO and carbon impurities were observed. PMID:27494195

  9. Nb1.30Cr0.70S5: a layered ternary mixed-metal sulfide

    PubMed Central

    Yun, Hoseop; Kim, Gangbeom

    2009-01-01

    The new layered ternary sulfide, Nb1.30Cr0.70S5, niobium chromium penta­sulfide, is isostructural with the solid solution Nb1+xV1−xS5 and belongs to the FeNb3Se10 structure type. Each layer is composed of two unique chains of face-sharing [NbS8] bicapped trigonal prisms (m symmetry) and edge-sharing [MS6] (M= Nb, Cr) octa­hedra (m symmetry). One of the two metal sites is occupied by statistically disordered Nb and Cr atoms, with 0.3 and 0.7 occupancy, respectively. The chains are connected along the c axis, forming two-dimensional layers, which then stack on top of each other to complete the three dimensional structure. As a result, an undulating van der Waals gap is found between the layers. PMID:21581463

  10. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  11. Monolayer and/or few-layer graphene on metal or metal-coated substrates

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2015-04-14

    Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.

  12. Asymmetric Flexible Supercapacitor Stack

    PubMed Central

    2008-01-01

    Electrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs) have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm) based AB3alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM and HRTEM). An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion®membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  13. Optimum Interfacial Layers For Fiber/Metal Composites

    NASA Technical Reports Server (NTRS)

    Lerch, Bradley A.; Ghosn, Louis J.

    1993-01-01

    Report presents theoretical stress-analysis study of some of factors affecting choice of thin layer of material placed at interface between each fiber and matrix of ceramic-fiber/metal-matrix composite. Effects of thickness, modulus of elasticity, and coefficient of thermal expansion considered.

  14. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  15. Advanced optical interference filters based on metal and dielectric layers.

    PubMed

    Begou, Thomas; Lemarchand, Fabien; Lumeau, Julien

    2016-09-01

    In this paper, we investigate the design and the fabrication of an advanced optical interference filter based on metal and dielectric layers. This filter respects the specifications of the 2016 OIC manufacturing problem contest. We study and present all the challenges and solutions that allowed achieving a low deviation between the fabricated prototype and the target. PMID:27607695

  16. Exfoliation of large-area transition metal chalcogenide single layers

    PubMed Central

    Magda, Gábor Zsolt; Pető, János; Dobrik, Gergely; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente

    2015-01-01

    Isolating large-areas of atomically thin transition metal chalcogenide crystals is an important but challenging task. The mechanical exfoliation technique can provide single layers of the highest structural quality, enabling to study their pristine properties and ultimate device performance. However, a major drawback of the technique is the low yield and small (typically < 10 μm) lateral size of the produced single layers. Here, we report a novel mechanical exfoliation technique, based on chemically enhanced adhesion, yielding MoS2 single layers with typical lateral sizes of several hundreds of microns. The idea is to exploit the chemical affinity of the sulfur atoms that can bind more strongly to a gold surface than the neighboring layers of the bulk MoS2 crystal. Moreover, we found that our exfoliation process is not specific to MoS2, but can be generally applied for various layered chalcogenides including selenites and tellurides, providing an easy access to large-area 2D crystals for the whole class of layered transition metal chalcogenides. PMID:26443185

  17. The evaluation of stack metal emissions from hazardous waste incinerators: Assessing human exposure through noninhalation pathways

    SciTech Connect

    Sedman, R.M.; Polisini, J.M.; Esparza, J.R.

    1994-06-01

    Potential public health effects associated with exposure to metal emissions from hazardous waste incinerators through noninhalation pathways were evaluated. Instead of relying on modeling the movement of toxicants through various environmental media, an approach based on estimating changes from baseline levels of exposure was employed. Changes in soil and water As, Cd, Hg, Pb, Cr, and Be concentrations that result from incinerator emissions were first determined. Estimates of changes in human exposure due to direct contact with shallow soil or the ingestion of surface water were then ascertained. Projected changes in dietary intakes of metals due to incinerator emissions were estimated based on changes from baseline dietary intakes that are monitored in U.S. Food and Drug Administration total diet studies. Changes from baseline intake were deemed to be proportional to the projected changes in soil or surface water metal concentrations. Human exposure to metals emitted from nine hazardous waste incinerators were then evaluated. Metal emissions from certain facilities resulted in tangible human exposure through noninhalation pathways. However, the analysis indicated that the deposition of metals from ambient air would result in substantially greater human exposure through noninhalation pathways than the emissions from most of the facilities. 51 refs., 1 fig., 6 tabs.

  18. The evaluation of stack metal emissions from hazardous waste incinerators: assessing human exposure through noninhalation pathways.

    PubMed Central

    Sedman, R M; Polisini, J M; Esparza, J R

    1994-01-01

    Potential public health effects associated with exposure to metal emissions from hazardous waste incinerators through noninhalation pathways were evaluated. Instead of relying on modeling the movement of toxicants through various environmental media, an approach based on estimating changes from baseline levels of exposure was employed. Changes in soil and water As, Cd, Hg, Pb, Cr, and Be concentrations that result from incinerator emissions were first determined. Estimates of changes in human exposure due to direct contact with shallow soil or the ingestion of surface water were then ascertained. Projected changes in dietary intakes of metals due to incinerator emissions were estimated based on changes from baseline dietary intakes that are monitored in U.S. Food and Drug Administration total diet studies. Changes from baseline intake were deemed to be proportional to the projected changes in soil or surface water metal concentrations. Human exposure to metals emitted from nine hazardous waste incinerators were then evaluated. Metal emissions from certain facilities resulted in tangible human exposure through noninhalation pathways. However, the analysis indicated that the deposition of metals from ambient air would result in substantially greater human exposure through noninhalation pathways than the emissions from most of the facilities. PMID:7925180

  19. Theoretical and Monte Carlo optimization of a stacked three-layer flat-panel x-ray imager for applications in multi-spectral diagnostic medical imaging

    NASA Astrophysics Data System (ADS)

    Lopez Maurino, Sebastian; Badano, Aldo; Cunningham, Ian A.; Karim, Karim S.

    2016-03-01

    We propose a new design of a stacked three-layer flat-panel x-ray detector for dual-energy (DE) imaging. Each layer consists of its own scintillator of individual thickness and an underlying thin-film-transistor-based flat-panel. Three images are obtained simultaneously in the detector during the same x-ray exposure, thereby eliminating any motion artifacts. The detector operation is two-fold: a conventional radiography image can be obtained by combining all three layers' images, while a DE subtraction image can be obtained from the front and back layers' images, where the middle layer acts as a mid-filter that helps achieve spectral separation. We proceed to optimize the detector parameters for two sample imaging tasks that could particularly benefit from this new detector by obtaining the best possible signal to noise ratio per root entrance exposure using well-established theoretical models adapted to fit our new design. These results are compared to a conventional DE temporal subtraction detector and a single-shot DE subtraction detector with a copper mid-filter, both of which underwent the same theoretical optimization. The findings are then validated using advanced Monte Carlo simulations for all optimized detector setups. Given the performance expected from initial results and the recent decrease in price for digital x-ray detectors, the simplicity of the three-layer stacked imager approach appears promising to usher in a new generation of multi-spectral digital x-ray diagnostics.

  20. Comparative study of the synthesis of layered transition metal molybdates

    SciTech Connect

    Mitchell, S.; Gomez-Aviles, A.; Gardner, C.; Jones, W.

    2010-01-15

    Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT{sub 2}(OH)(MoO{sub 4}){sub 2}.H{sub 2}O, where A=NH{sub 4}{sup +}, Na{sup +} or K{sup +}. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products. - Graphical abstract: Mixed metal oxides (MMOs) derived from layered double hydroxide precursors differ in their reactivity on exposure to aqueous molybdate containing solutions. We investigate the influence of the molybdate source, the rehydration pH and the ratio of T/Mo on the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates of general formula AT{sub 2}(OH)(MoO{sub 4}){sub 2}.H{sub 2}O (where A{sup +}=NH{sub 4}{sup +}, K{sup +} or Na{sup +}).

  1. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  2. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    SciTech Connect

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  3. Photoluminescence emission from Alq3 organic layer in metal-Alq3-metal plasmonic structure

    NASA Astrophysics Data System (ADS)

    Huang, Bohr-Ran; Liao, Chung-Chi; Fan, Wan-Ting; Wu, Jin-Han; Chen, Cheng-Chang; Lin, Yi-Ping; Li, Jung-Yu; Chen, Shih-Pu; Ke, Wen-Cheng; Chen, Nai-Chuan

    2014-06-01

    The emission properties of an organic layer embedded in a metal-organic-metal (MOM) structure were investigated. A partially radiative odd-SPW as well as a non-radiative even-SPW modes are supported by hybridization of the SPW modes on the opposite organic/metal interface in the structure. Because of the competition by this radiative SPW, the population of excitons that recombine to form non-radiative SPW should be reduced. This may account for why the photoluminescence intensity of the MOM sample is higher than that of an organic-metal sample even though the MOM sample has an additional metal layer that should intuitively act as a filter.

  4. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2015-04-28

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  5. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  6. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  7. Final Report - Subfreezing Start/Stop Protocol for an Advanced Metallic Open Flowfield Fuel Cell Stack

    SciTech Connect

    Conti, Amedeo

    2010-09-28

    For fuel cells to be commercially viable as powerplants in automotive applications, the ability to survive and start reliably in cold climates (as low as -40C) is a must. Since fuel cells are water-based energy systems, this requirement is a significant technical challenge. Water transport studies are imperative for achieving DOE targets for fuel cell startup time from subfreezing conditions. Stack components must be selected that endure thermal and humidity cycling over the operating range, and operating strategies must be devised that enable the fuel cell to start, i.e. generate power and heat up sufficiently before ice extinguishes the galvanic reactions, and afford evacuation of a sufficient amount of water, using a limited amount of auxiliary power, at shutdown. The objective of the CIRRUS program was to advance the state of the art in fuel cell operability under subfreezing conditions, consistent with requirements for applications involving such conditions (e.g. automotive, forklifts, backup power systems, and APUs) and DOE targets, specifically to: • Demonstrate repeatable achievement of 50% rated power in less than 30 seconds from a -20C start condition, using less than 5 MJ auxiliary energy over the complete start/stop cycle. • Demonstrate unassisted start capability from an initial temperature of -40C.

  8. Hydrogen permeation resistant layers for liquid metal reactors

    SciTech Connect

    McGuire, J.C.

    1980-03-01

    Reviewing the literature in the tritium diffusion field one can readily see a wide divergence in results for both the response of permeation rate to pressure, and the effect of oxide layers on total permeation rates. The basic mechanism of protective oxide layers is discussed. Two coatings which are less hydrogen permeable than the best naturally occurring oxide are described. The work described is part of an HEDL-ANL cooperative research program on Tritium Permeation in Liquid Metal Cooled Reactors. This includes permeation work on hydrogen, deuterium, and tritium with the hydrogen-deuterium research leading to the developments presented.

  9. Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology

    NASA Astrophysics Data System (ADS)

    Ker, Ming-Dou; Hsu, Hsin-Chyh; Peng, Jeng-Jie

    2002-11-01

    A novel ion implantation method for electrostatic discharge protection, often called as ESD implantation, is proposed to significantly improve machine-model (MM) ESD robustness of N-channel metal-oxide semiconductors (NMOS) device in stacked configuration (stacked NMOS). By using this ESD implantation method, the ESD current is discharged far away from the surface channel of NMOS, therefore the stacked NMOS in the mixed-voltage I/O interface can sustain a much higher ESD level, especially under the MM ESD stress. The MM ESD robustness of the stacked NMOS with a device dimension of W/L=300 μm/0.5 μm for each NMOS has been successfully improved from the original 358 V to become 491 V in a 0.25-μm complementary metal-oxide semiconductors (CMOS) process.

  10. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    PubMed Central

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. PMID:26725854

  11. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.

  12. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides.

    PubMed

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. PMID:26725854

  13. Eight combinatorial stacks of three layers of carbon black/PVA-carbon black/EVA composite as a vapor detector array.

    PubMed

    Setasuwon, Paisan; Menbangpung, Laongdao; Sahasithiwat, Somboon

    2008-01-01

    Eight specimens of combinatorial stacking of 3 layers of carbon black/PVA-carbon black/EVA composite were prepared on substrate with interdigitated electrode. They were subjected to 15 solvent vapors with dielectric constants from 2-80,and their responses were processed for calculation of resolution factor (RF). If the detector responses are assumed to have a normal distribution, RF values of 1.0, 2.0, and 3.0 indicate the 76, 92, and 98% confidence, respectively, of correctly identifying one analyte from the other of a specific pair. Of the possible 105 pairs, 99 pairs have RF values of more than 3, 5 pairs have RF values of more than 1, and only one pair has an RF value of less than 1. The resolution factor was affected by both the dielectric constant and boiling point of tested solvents. Employing Fisher linear discrimination improves all RF values greater than 3, making confidence in resolving the pair reach almost 100%. Contributions from each combination were studied, and it was shown that diversity by combinatorial stacking is essential to the improvement of RF value. All of these capabilities are derived from combinatorial stacking of 3 layers of just two simple carbon black/polymer composites. PMID:18855459

  14. Layer-selective half-metallicity in bilayer graphene nanoribbons

    PubMed Central

    Jeon, Gi Wan; Lee, Kyu Won; Lee, Cheol Eui

    2015-01-01

    Half-metallicity recently predicted in the zigzag-edge graphene nanoribbons (ZGNRs) and the hydrogenated carbon nanotubes (CNTs) enables fully spin-polarized electric currents, providing a basis for carbon-based spintronics. In both carbon systems, the half-metallicity arises from the edge-localized electron states under an electric field, lowering the critical electric field Dc for the half-metallicity being an issue in recent works on ZGNRs. A properly chosen direction of the electric field alone has been predicted to significantly reduce Dc in the hydrogenated CNTs, which in this work turned out to be the case in narrow bilayer ZGNRs (biZGNRs). Here, our simple model based on the electrostatic potential difference between the edges predicts that for wide biZGNRs of width greater than ~2.0 nm (10 zigzag carbon chains), only one layer of the biZGNRs becomes half-metallic leaving the other layer insulating as confirmed by our density functional theory (DFT) calculations. The electric field-induced switching of the spin-polarized current path is believed to open a new route to graphene-based spintronics applications. PMID:25950724

  15. Dielectric and Conductivity Mapping of Few-Layer Metal Chalcogenides

    NASA Astrophysics Data System (ADS)

    Lai, Keji; Wu, Di; Liu, Yingnan; Ren, Yuan; Lin, Min; Peng, Hailin; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney

    2014-03-01

    A novel microwave impedance microscope was used to spatially map the local dielectric constant and conductivity of few-layered metal chalcogenides without the need of contact electrodes. For phase-change In2Se3 nanoplates grown on mica substrates, our results showed a sudden drop of permittivity from the bulk value for thicknesses below 5 layers and strong dielectric inhomogeneity around 4 and 5 layers. For CVD-grown MoS2 flakes on SiO2/Si wafers, we observed highly conductive localized regions within monolayer islands. These regions, which can be imaged by scanning electron microscopy and atomic force microscopy, show enhanced Raman signals and PL signal quenching. Continued imaging effort is expected to shed some light on the growth mechanism and electron physics of these quasi-2D chalcogenides.

  16. Microstructure and Mechanical Properties of Nanostructured 1050/6061 Aluminum Alloy Fabricated by Four-Layer Stack Accumulative Roll-Bonding.

    PubMed

    Lee, Seong-Hee; Lee, Seong Ro

    2015-07-01

    An ultrafine grained AA1050/AA6061 Al alloy sheet was successfully fabricated by four-layer stack ARB process. The ARB of AA1050 and AA6061 alloy sheets was performed up to 3 cycles without a lubricant at ambient temperature. The sample fabricated by the ARB was a multi-layer aluminum alloy sheet in which AA1050 and AA6061 layers are alternately stacked. The layer thickness of the each alloy became thinner and elongated to the rolling direction with increasing the number of ARB cycles. The tensile strength increased with the ARB, it reached about 347 MPa which is almost 2.4 times that of the starting material. The grain size decreased with increasing of the number of ARB cycles, became about 190 nm in thickness after 3 cycles. The variation of mechanical properties with the ARB was similar to those of the other ARB processed materials. However, the texture development was different from those of the conventional ARB processed materials. PMID:26373070

  17. Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope

    SciTech Connect

    Hasegawa, Masaki; Ohno, Toshiyuki

    2011-10-01

    Mirror electron microscope (MEM) observation has been conducted for a 4-{mu}m-thick n-doped 4H-SiC epitaxial layer. If the sample is simultaneously illuminated with ultraviolet (UV) light of a slightly greater energy than the bandgap energy of 4H-SiC, in-grown stacking faults (IGSFs) can be clearly observed in MEM images. These observations were performed non-destructively, as almost all irradiated electrons returned without impinging the sample surface due to the negative voltage applied to the sample. High spatial resolution observation via MEM showed that multiple IGSFs were stacked up. The phenomenon in which the contrast of the IGSFs vanished in the absence of UV illumination and under UV illumination with a lower energy than the bandgap energy revealed that the origin of the contrast was the negative charging of IGSFs trapping electrons excited by UV light.

  18. Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs

    SciTech Connect

    Cao, Yan-Qiang; Li, Xin; Zhu, Lin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-15

    The thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs were investigated. Compared to HfO{sub 2}/Al{sub 2}O{sub 3} gate dielectric, significant improvements in interfacial quality as well as electrical characteristics after postdeposition annealing are confirmed by constructing HfO{sub 2}/AlN dielectric stacks. The chemical states were carefully explored by the x-ray photoelectron spectroscopy, which indicates the AlN layers effectively prevent from the formation of defective native oxides at elevated temperatures. In addition, it is found that NH{sub 3} plasma during AlN plasma-enhanced atomic layer deposition also has the self-cleaning effect as Al(CH{sub 3}){sub 3} in removing native oxides. The passivating AlN layers suppress the formation of interfacial oxide and trap charge, leading to the decrease of capacitance equivalent thickness after annealing. Moreover, HfO{sub 2}/AlN/GaAs sample has a much lower leakage current density of 2.23 × 10{sup −4} A/cm{sup 2} than HfO{sub 2}/Al{sub 2}O{sub 3}/GaAs sample of 2.58 × 10{sup −2} A/cm{sup 2}. For the HfO{sub 2}/AlN/GaAs sample annealed at 500 °C, it has a lowest interface trap density value of 2.11 × 10{sup 11} eV{sup −1} cm{sup −2}. These results indicate that adopting HfO{sub 2}/AlN dielectric stacks may be a promising approach for the realization of high quality GaAs-based transistor devices.

  19. Protein Induces Layer-by-Layer Exfoliation of Transition Metal Dichalcogenides.

    PubMed

    Guan, Guijian; Zhang, Shuangyuan; Liu, Shuhua; Cai, Yongqing; Low, Michelle; Teng, Choon Peng; Phang, In Yee; Cheng, Yuan; Duei, Koh Leng; Srinivasan, Bharathi Madurai; Zheng, Yuangang; Zhang, Yong-Wei; Han, Ming-Yong

    2015-05-20

    Here, we report a general and facile method for effective layer-by-layer exfoliation of transition metal dichalcogenides (TMDs) and graphite in water by using protein, bovine serum albumin (BSA) to produce single-layer nanosheets, which cannot be achieved using other commonly used bio- and synthetic polymers. Besides serving as an effective exfoliating agent, BSA can also function as a strong stabilizing agent against reaggregation of single-layer nanosheets for greatly improving their biocompatibility in biomedical applications. With significantly increased surface area, single-layer MoS2 nanosheets also exhibit a much higher binding capacity to pesticides and a much larger specific capacitance. The protein exfoliation process is carefully investigated with various control experiments and density functional theory simulations. It is interesting to find that the nonpolar groups of protein can firmly bind to TMD layers or graphene to expose polar groups in water, facilitating the effective exfoliation of single-layer nanosheets in aqueous solution. The present work will enable to optimize the fabrication of various 2D materials at high yield and large scale, and bring more opportunities to investigate the unique properties of 2D materials and exploit their novel applications. PMID:25936424

  20. Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

    SciTech Connect

    Akazawa, Housei Fukuda, Hiroshi

    2015-05-15

    We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

  1. Polarized thermal radiation by layer-by-layer metallic emitters with sub-wavelength grating.

    PubMed

    Lee, Jae-Hwang; Leung, Wai; Kim, Tae Guen; Constant, Kristen; Ho, Kai-Ming

    2008-06-01

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 mum, as well as high emissivity up to 0.65 at a wavelength of 3.7 microm. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization. PMID:18545587

  2. Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory

    NASA Astrophysics Data System (ADS)

    Miyaji, Kousuke; Yanagihara, Yuki; Hirasawa, Reo; Ning, Sheyang; Takeuchi, Ken

    2014-02-01

    A cell design for three-dimensional (3D) stackable NAND (3D NAND) flash memory are investigated with emphases on control gate length (Lg), spacing (Lspace) and channel hole diameter (Φ). The requirements for the Lg and Lspace are derived from the 3D device simulation and the effective cell size that competes with the planar NAND. The simulations reveal that Lg = Lspace = 20 nm (40 nm layer pitch) is achievable for bit-cost scalable (BiCS)-type 3D NAND with the 90 nm diameter hole. If the number of stacked layers is 22 with the layer pitch of 40 nm, the effective cell size of the 3D NAND corresponds to that of 15 nm planar NAND technology. Furthermore, cell characteristics of the macaroni body channel with various Φ are investigated. Although macaroni body channel improves cell characteristics at Φ = 90 nm, a cell with Φ = 60 nm without macaroni body structure shows better characteristics.

  3. Comparative study of the synthesis of layered transition metal molybdates

    NASA Astrophysics Data System (ADS)

    Mitchell, S.; Gómez-Avilés, A.; Gardner, C.; Jones, W.

    2010-01-01

    Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs ( T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT2(OH)(MoO 4) 2·H 2O, where A=NH 4+, Na + or K +. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products.

  4. Dynamic Control of Optical Response in Layered Metal Chalcogenide Nanoplates.

    PubMed

    Liu, Yanping; Tom, Kyle; Wang, Xi; Huang, Chunming; Yuan, Hongtao; Ding, Hong; Ko, Changhyun; Suh, Joonki; Pan, Lawrence; Persson, Kristin A; Yao, Jie

    2016-01-13

    Tunable optical transitions in ultrathin layered 2-dimensional (2D) materials unveil the electronic structures of materials and provide exciting prospects for potential applications in optics and photonics. Here, we present our realization of dynamic optical modulation of layered metal chalcogenide nanoplates using ionic liquid (IL) gating over a wide spectral range. The IL gating significantly increased the tuning range of the Fermi level and, as a result, substantially altered the optical transitions in the nanoplates. Using heavily n-doped Bi2Se3 nanoplates, we substantially modulated the light transmission through the ultrathin layer. A tunable, high-transmission spectral window in the visible to near-infrared region has been observed due to simultaneous shifts of both the plasma edge and absorption edge of the material. On the other hand, optical response of multilayer MoSe2 flakes gated by IL has shown enhanced transmission in both positive and negative biases, which is consistent with their ambipolar electrical behavior. The electrically controlled optical property tuning in metal chalcogenide material systems provides new opportunities for potential applications, such as wide spectral range optical modulators, optical filters, and electrically controlled smart windows with extremely low material consumption. PMID:26599063

  5. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

    SciTech Connect

    Burke, Micheal Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J.

    2015-01-01

    The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

  6. Iridium Interfacial Stack (IRIS)

    NASA Technical Reports Server (NTRS)

    Spry, David James (Inventor)

    2015-01-01

    An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

  7. Nucleation and Early Stages of Layer-by-Layer Growth of Metal Organic Frameworks on Surfaces

    PubMed Central

    2015-01-01

    High resolution atomic force microscopy (AFM) is used to resolve the evolution of crystallites of a metal organic framework (HKUST-1) grown on Au(111) using a liquid-phase layer-by-layer methodology. The nucleation and faceting of individual crystallites is followed by repeatedly imaging the same submicron region after each cycle of growth and we find that the growing surface is terminated by {111} facets leading to the formation of pyramidal nanostructures for [100] oriented crystallites, and triangular [111] islands with typical lateral dimensions of tens of nanometres. AFM images reveal that crystallites can grow by 5–10 layers in each cycle. The growth rate depends on crystallographic orientation and the morphology of the gold substrate, and we demonstrate that under these conditions the growth is nanocrystalline with a morphology determined by the minimum energy surface. PMID:26709359

  8. Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Huang, Chang-Ning; Shields, Philip A.; Allsopp, Duncan W. E.; Trampert, Achim

    2013-08-01

    The planar defect structure of coalesced GaN layers fabricated on ordered arrays of nanorods and grown by metal-organic vapour phase epitaxy has been studied using conventional and high-resolution transmission electron microscopy. During the process of coalescence, a boundary was created between two pyramids, where I1-type basal plane stacking faults propagating through the overgrown layers are terminated by Frank-Shockley partial dislocations. According to multislice HRTEM simulations of experimental observed images in the [ ? ] zone axis, the step-and hairpin-shaped basal prismatic stacking faults with inclined ? plane are consistent with Drum's structural model, which has a lower formation energy compared with the model proposed by Amelinckx. Based on the observation that there are no stacking faults in the overgrown layers prior to the nanopyramid merging, the mechanism of coalescence induced stacking faults is proposed. This research contributes to the understanding of planar defect formation in III-nitride semiconductor grown by a coalescence process.

  9. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.

    PubMed

    Schulte-Braucks, C; von den Driesch, N; Glass, S; Tiedemann, A T; Breuer, U; Besmehn, A; Hartmann, J-M; Ikonic, Z; Zhao, Q T; Mantl, S; Buca, D

    2016-05-25

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications. PMID:27149260

  10. Double layer effects on metal nucleation in deep eutectic solvents.

    PubMed

    Abbott, Andrew P; Barron, John C; Frisch, Gero; Gurman, Stephen; Ryder, Karl S; Fernando Silva, A

    2011-06-01

    The electrodeposition of zinc has been studied in two deep eutectic solvents. Unlike the metals studied to date in these liquids, zinc electrodeposition is not mass transport limited and the morphology of the deposit differs in the two liquids. This study shows that changing the concentration of solute affects the physical properties of the liquid to different extents although this is found to not effect the morphology of the metal deposited. EXAFS was used to show that the speciation of zinc was the same in both liquids. Double layer capacitance studies showed differences between the two liquids and these are proposed to be due to the adsorption of a species on the electrode which is thought to be chloride. The differences in zinc morphology is attributed to blocking of certain crystal faces leading to deposition of small platelet shaped crystals in the glycol based liquid. PMID:21519629

  11. Spin and pseudospins in layered transition metal dichalcogenides

    SciTech Connect

    Xu, Xiaodong; Yao, Wang; Xiao, Di; Heinz, Tony F.

    2014-01-01

    The recent emergence of two-dimensional layered materials in particular the transition metal dichalcogenides provides a new laboratory for exploring the internal quantum degrees of freedom of electrons and their potential for new electronics. These degrees of freedom are the real electron spin, the layer pseudospin, and the valley pseudospin. New methods for the quantum control of the spin and these pseudospins arise from the existence of Berry phase-related physical properties and strong spin orbit coupling. The former leads to the versatile control of the valley pseudospin, whereas the latter gives rise to an interplay between the spin and the pseudospins. Here, we provide a brief review of both theoretical and experimental advances in this field.

  12. Template-Free 3D Microprinting of Metals Using a Force-Controlled Nanopipette for Layer-by-Layer Electrodeposition.

    PubMed

    Hirt, Luca; Ihle, Stephan; Pan, Zhijian; Dorwling-Carter, Livie; Reiser, Alain; Wheeler, Jeffrey M; Spolenak, Ralph; Vörös, János; Zambelli, Tomaso

    2016-03-23

    A novel 3D printing method for voxel-by-voxel metal printing is presented. Hollow atomic force microscopy (AFM) cantilevers are used to locally supply metal ions in an electrochemical cell, enabling a localized electroplating reaction. By exploiting the deflection feedback of these probes, electrochemical 3D metal printing is, for the first time, demonstrated in a layer-by-layer fashion, enabling the fabrication of arbitrary-shaped geometries. PMID:26783090

  13. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    NASA Astrophysics Data System (ADS)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

  14. The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack

    SciTech Connect

    Winter, R.; Krylov, I.; Eizenberg, M.; Ahn, J.; McIntyre, P. C.

    2014-05-19

    The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al{sub 2}O{sub 3}/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

  15. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides.

    PubMed

    Terrones, Humberto; López-Urías, Florentino; Terrones, Mauricio

    2013-01-01

    Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD. We have found, using first principles calculations, that by alternating individual layers of different STMD (MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different STMD would result in the fabrication of materials with unprecedented optical and physico-chemical properties that would need further experimental and theoretical investigations. PMID:23528957

  16. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

    PubMed Central

    Terrones, Humberto; López-Urías, Florentino; Terrones, Mauricio

    2013-01-01

    Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD. We have found, using first principles calculations, that by alternating individual layers of different STMD (MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different STMD would result in the fabrication of materials with unprecedented optical and physico-chemical properties that would need further experimental and theoretical investigations. PMID:23528957

  17. Microstructures of YBa2Cu3Oy Layers Deposited on Conductive Layer-Buffered Metal Tapes

    NASA Astrophysics Data System (ADS)

    Ichinose, Ataru; Hashimoto, Masayuki; Horii, Shigeru; Doi, Toshiya

    REBa2Cu3Oy (REBCO; RE: rare-earth elements)-coated conductors (CCs) have high potential for use in superconducting devices. In particular, REBCO CCs are useful for superconducting devices working at relatively high temperatures near 77 K. The important issues in their applications are high performance, reliability and low cost. To date, sufficient performance for some applications has almost been achieved by considerable efforts. The establishment of the reliability of superconducting devices is under way at present. The issue of low cost must be resolved to realize the application of superconducting devices in the near future. Therefore, we have attempted several ways to reduce the cost of REBCO CCs. The coated conductors using a Nb-doped SrTiO3 buffer layer and Ni-plated Cu and stainless steel laminate metal tapes have recently been developed to eliminate the use of electric stabilization layers of Cu and Ag, which are expected to reduce the material cost. Good superconducting properties are obtained at 77 K. The critical current density (JC) at 77 K under a magnetic self-field is determined to be more than 2x106 A/cm2. The microstructures of the CCs are analyzed by transmission electron microscopy to obtain a much higher quality. By microscopic structure analysis, an overgrowth of the buffer layer is observed at a grain boundary of the metal substrate, which is one of the reasons for the high JC.

  18. [Trace analysis of heavy metal ions in electroplate waste water by capillary electrophoresis with visual offline sample stacking via moving neutralization boundary].

    PubMed

    Fan, Yinping; Li, Shan; Fan, Liuyin; Cao, Chengxi

    2012-08-01

    A moving neutralization boundary (MNB) was developed as a novel model of visual offline sample stacking for the trace analysis of heavy metal ions (HMIs) by capillary zone electrophoresis (CZE). In the stacking system, the motion direction of MNB to cathode was used with 2.1 mmol/L HCl-98 mmol/L KCl-trace metal ions in the anodic solution and 4.0 mmol/L NaOH-96 mmol/L KCl in the cathodic solution. The voltage was constant at 180 V and the flow rate of the anolyte and catholyte was 1 mL/min. The metal ions in the gel after stacking were detected by capillary electrophoresis. The calibration curves showed good linear relationship (r > or = 0.998 5) in the concentration range used in the experiments. The pre-concentration factors were up to 80 - 150 and the limits of detection (LODs) were 0.163, 0.256, 0.077, 0.153, 0.203, 0.062 and 0.142 mg/L for Cu(II), Zn(II), Ni(II), Mg(II), Ca(II), Cr(III) and Fe(III), respectively, obviously lower than the national standards. The intra-day and inter-day assay precisions were good (the relative standard deviations (RSDs) less than 7.42%). Finally, the developed method has been successfully used for the stacking and the detection of heavy metal ions in electroplate waste water. PMID:23256387

  19. Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

    NASA Astrophysics Data System (ADS)

    Zhi, Y. S.; Li, P. G.; Wang, P. C.; Guo, D. Y.; An, Y. H.; Wu, Z. P.; Chu, X. L.; Shen, J. Q.; Tang, W. H.; Li, C. R.

    2016-01-01

    Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.

  20. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.; Boley, Allison; Smith, David J.

    2015-10-26

    The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

  1. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Gao; Ruimin, Xu; Kai, Zhang; Yuechan, Kong; Jianjun, Zhou; Cen, Kong; Xinxin, Yu; Xun, Dong; Tangsheng, Chen

    2016-06-01

    We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/La x Al1‑x O 3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. Project supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).

  2. Cross-stacked carbon nanotube film as an additional built-in current collector and adsorption layer for high-performance lithium sulfur batteries

    NASA Astrophysics Data System (ADS)

    Sun, Li; Kong, Weibang; Li, Mengya; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Zhang, Yihe; Wang, Jiaping; Fan, Shoushan

    2016-02-01

    Cross-stacked carbon nanotube (CNT) film is proposed as an additional built-in current collector and adsorption layer in sulfur cathodes for advanced lithium sulfur (Li-S) batteries. On one hand, the CNT film with high conductivity, microstructural rough surface, high flexibility and mechanical durability retains stable and direct electronic contact with the sulfur cathode materials, therefore decreasing internal resistivity and suppressing polarization of the cathode. On the other hand, the highly porous structure and the high surface area of the CNT film provide abundant adsorption points to support and confine sulfur cathode materials, alleviate their aggregation and promote high sulfur utilization. Moreover, the lightweight and compact structure of the CNT film adds no extra weight or volume to the sulfur cathode, benefitting the improvement of energy densities. Based on these characteristics, the sulfur cathode with a 100-layer cross-stacked CNT film presents excellent rate performances with capacities of 986, 922 and 874 mAh g-1 at cycling rates of 0.2C, 0.5C and 1C for sulfur loading of 60 wt%, corresponding to an improvement of 52%, 109% and 146% compared to that without a CNT film. Promising cycling performances are also demonstrated, offering great potential for scaled-up production of sulfur cathodes for Li-S batteries.

  3. Cross-stacked carbon nanotube film as an additional built-in current collector and adsorption layer for high-performance lithium sulfur batteries.

    PubMed

    Sun, Li; Kong, Weibang; Li, Mengya; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Zhang, Yihe; Wang, Jiaping; Fan, Shoushan

    2016-02-19

    Cross-stacked carbon nanotube (CNT) film is proposed as an additional built-in current collector and adsorption layer in sulfur cathodes for advanced lithium sulfur (Li-S) batteries. On one hand, the CNT film with high conductivity, microstructural rough surface, high flexibility and mechanical durability retains stable and direct electronic contact with the sulfur cathode materials, therefore decreasing internal resistivity and suppressing polarization of the cathode. On the other hand, the highly porous structure and the high surface area of the CNT film provide abundant adsorption points to support and confine sulfur cathode materials, alleviate their aggregation and promote high sulfur utilization. Moreover, the lightweight and compact structure of the CNT film adds no extra weight or volume to the sulfur cathode, benefitting the improvement of energy densities. Based on these characteristics, the sulfur cathode with a 100-layer cross-stacked CNT film presents excellent rate performances with capacities of 986, 922 and 874 mAh g(-1) at cycling rates of 0.2C, 0.5C and 1C for sulfur loading of 60 wt%, corresponding to an improvement of 52%, 109% and 146% compared to that without a CNT film. Promising cycling performances are also demonstrated, offering great potential for scaled-up production of sulfur cathodes for Li-S batteries. PMID:26778739

  4. Wear mechanisms in metal-on-metal bearings: the importance of tribochemical reaction layers.

    PubMed

    Wimmer, Markus A; Fischer, Alfons; Büscher, Robin; Pourzal, Robin; Sprecher, Christoph; Hauert, Roland; Jacobs, Joshua J

    2010-04-01

    Metal-on-metal (MoM) bearings are at the forefront in hip resurfacing arthroplasty. Because of their good wear characteristics and design flexibility, MoM bearings are gaining wider acceptance with market share reaching nearly 10% worldwide. However, concerns remain regarding potential detrimental effects of metal particulates and ion release. Growing evidence is emerging that the local cell response is related to the amount of debris generated by these bearing couples. Thus, an urgent clinical need exists to delineate the mechanisms of debris generation to further reduce wear and its adverse effects. In this study, we investigated the microstructural and chemical composition of the tribochemical reaction layers forming at the contacting surfaces of metallic bearings during sliding motion. Using X-ray photoelectron spectroscopy and transmission electron microscopy with coupled energy dispersive X-ray and electron energy loss spectroscopy, we found that the tribolayers are nanocrystalline in structure, and that they incorporate organic material stemming from the synovial fluid. This process, which has been termed "mechanical mixing," changes the bearing surface of the uppermost 50 to 200 nm from pure metallic to an organic composite material. It hinders direct metal contact (thus preventing adhesion) and limits wear. This novel finding of a mechanically mixed zone of nanocrystalline metal and organic constituents provides the basis for understanding particle release and may help in identifying new strategies to reduce MoM wear. PMID:19877285

  5. Metal-phthalocyanine ordered layers on Au(110): Metal-dependent adsorption energy

    SciTech Connect

    Massimi, Lorenzo Angelucci, Marco; Gargiani, Pierluigi; Betti, Maria Grazia; Montoro, Silvia; Mariani, Carlo

    2014-06-28

    Iron-phthalocyanine and cobalt-phthalocyanine chains, assembled along the Au(110)-(1×2) reconstructed channels, present a strong interaction with the Au metallic states, via the central metal ion. X-ray photoemission spectroscopy from the metal-2p core-levels and valence band high-resolution ultraviolet photoelectron spectroscopy bring to light signatures of the interaction of the metal-phthalocyanine single-layer with gold. The charge transfer from Au to the molecule causes the emerging of a metal-2p core level component at lower binding energy with respect to that measured in the molecular thin films, while the core-levels associated to the organic macrocycle (C and N 1s) are less influenced by the adsorption, and the macrocycles stabilize the interaction, inducing a strong interface dipole. Temperature Programmed Desorption experiments and photoemission as a function of temperature allow to estimate the adsorption energy for the thin-films, mainly due to the molecule-molecule van der Waals interaction, while the FePc and CoPc single-layers remain adsorbed on the Au surface up to at least 820 K.

  6. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

    PubMed

    Lv, Ruitao; Robinson, Joshua A; Schaak, Raymond E; Sun, Du; Sun, Yifan; Mallouk, Thomas E; Terrones, Mauricio

    2015-01-20

    CONSPECTUS: In the wake of the discovery of the remarkable electronic and physical properties of graphene, a vibrant research area on two-dimensional (2D) layered materials has emerged during the past decade. Transition metal dichalcogenides (TMDs) represent an alternative group of 2D layered materials that differ from the semimetallic character of graphene. They exhibit diverse properties that depend on their composition and can be semiconductors (e.g., MoS2, WS2), semimetals (e.g., WTe2, TiSe2), true metals (e.g., NbS2, VSe2), and superconductors (e.g., NbSe2, TaS2). The properties of TMDs can also be tailored according to the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. For example, 2H-MoS2 is semiconducting, whereas 1T-MoS2 is metallic. Bulk 2H-MoS2 possesses an indirect band gap, but when 2H-MoS2 is exfoliated into monolayers, it exhibits direct electronic and optical band gaps, which leads to enhanced photoluminescence. Therefore, it is important to learn to control the growth of 2D TMD structures in order to exploit their properties in energy conversion and storage, catalysis, sensing, memory devices, and other applications. In this Account, we first introduce the history and structural basics of TMDs. We then briefly introduce the Raman fingerprints of TMDs of different layer numbers. Then, we summarize our progress on the controlled synthesis of 2D layered materials using wet chemical approaches, chemical exfoliation, and chemical vapor deposition (CVD). It is now possible to control the number of layers when synthesizing these materials, and novel van der Waals heterostructures (e.g., MoS2/graphene, WSe2/graphene, hBN/graphene) have recently been successfully assembled. Finally, the unique optical, electrical, photovoltaic, and catalytic properties of few-layered TMDs are summarized and discussed. In particular, their enhanced photoluminescence (PL), photosensing, photovoltaic conversion, and

  7. Layering effects on low frequency modes in n-layered MX2 transition metal dichalcogenides.

    PubMed

    Cammarata, Antonio; Polcar, Tomas

    2016-02-14

    n-Layered (n = 2, 3, 4) MX2 transition metal dichalcogenides (M = Mo, W; X = S, Se, Te) have been studied using DFT techniques. Long-range van der Waals forces have been modeled using the Grimme correction to capture interlayer interactions. We study the dynamic and electronic dependence of atomic displacement on the number of layers. We find that the displacement patterns mainly affected by a change in the layer number are low-frequency modes at Γ and A k-points; such modes are connected with the intrinsic tribological response. We disentangle electro-phonon coupling by combining orbital polarization, covalency and cophonicity analysis with phonon band calculations. We find that the frequency dependence on the number of layers and the atomic type has a non-trivial relation with the electronic charge distribution in the interlayer region. We show that the interlayer electronic density can be adjusted by appropriately tuning M-X cophonicity, acting as a knob to control vibrational frequencies, hence the intrinsic frictional response. The present results can be exploited to study the electro-phonon coupling effects in TMD-based materials beyond tribological applications. PMID:26806673

  8. Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect

    NASA Astrophysics Data System (ADS)

    Zhou, Hai; Fang, Guojia; Liu, Nishuang; Zhao, Xingzhong

    2011-12-01

    Pt/ZnO nanorod (NR) and Pt/modified ZnO NR Schottky barrier ultraviolet (UV) photodetectors (PDs) were prepared with different seed layers and metal oxide modifying layer materials. In this paper, we discussed the effect of metal oxide modifying layer on the performance of UV PDs pre- and post-deposition annealing at 300°C, respectively. For Schottky barrier UV PDs with different seed layers, the MgZnO seed layer-PDs without metal oxide coating showed bigger responsivity and larger detectivity ( D λ*) than those of PDs with ZnO seed layer, and the reason was illustrated through energy band theory and the electron transport mechanism. Also the ratio of D 254* to D 546* was calculated above 8 × 102 for all PDs, which demonstrated that our PDs showed high selectivity for detecting UV light with less influence of light with long wavelength.

  9. Cr2O3 scale growth rates on metallic interconnectors derived from 40,000 h solid oxide fuel cell stack operation

    NASA Astrophysics Data System (ADS)

    Linder, Markus; Hocker, Thomas; Holzer, Lorenz; Friedrich, K. Andreas; Iwanschitz, Boris; Mai, Andreas; Schuler, J. Andreas

    2013-12-01

    The ohmic resistance caused by Cr2O3 scale formation on metallic interconnects (MICs) can significantly contribute to the overall degradation of SOFC stacks. For this reason oxide scale growth on Cr5Fe1Y2O3 (CFY) and Fe22Cr0.5Mn (Crofer) was investigated by scanning electron microscopy (SEM) from post-test samples that were either exposed to air at 850 °C (furnace) or operated in Hexis planar SOFC-stacks under dual atmospheres (anode and cathode conditions) at temperatures around 900 °C. The study includes unique test results from a stack operated for 40,000 h. To analyze inhomogeneity in scale thicknesses a dedicated statistical image analysis method has been applied. SEM images were used to compare the structural phenomena related to MIC oxidation at different sample locations. The observed differences between different sample locations may relate to locally different conditions (temperature, pO2, H2O/O2-ratio). Cr2O3 scale growth on the anode side is found to be approximately twice as fast in comparison to the scale growth on cathode side. Finally, based on our time lapse analyses with extensive sampling it can be concluded that reliable predictions of scale growth requires statistical analyses over a period that covers at least a quarter (10,000 h) of the required SOFC stack lifetime (40,000 h).

  10. Method for producing functionally graded nanocrystalline layer on metal surface

    DOEpatents

    Ajayi, Oyelayo O.; Hershberger, Jeffrey G.

    2010-03-23

    An improved process for the creation or formation of nanocrystalline layers on substrates' surfaces is provided. The process involves "prescuffing" the surface of a substrate such as a metal by allowing friction to occur on the surface by a load-bearing entity making rubbing contact and moving along and on the substrate's surface. The "prescuffing" action is terminated when the coefficient of friction between the surface and the noise is rising significantly. Often, the significant rise in the coefficient of friction is signaled by a change in pitch of the scuffing action sound emanating from the buffeted surface. The "prescuffing" gives rise to a harder and smoother surface which withstands better any inadequate lubrication that may take place when the "prescuffed" surface is contacted by other surfaces.

  11. Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

    PubMed Central

    Nadda, Kanika; Kumar, M. Jagadesh

    2015-01-01

    A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current gain but also exhibits high BVCEO · fT product making it highly suitable for mixed signal high speed circuits. The proposed device structure is also suitable for realizing doping-less bipolar charge plasma transistor using compound semiconductors such as GaAs, SiC with low thermal budgets. The device is also immune to non-ideal current crowding effects cropping up at high current densities. PMID:25597295

  12. Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

    PubMed

    Monajjemi, Majid

    2014-11-01

    A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene. PMID:25359456

  13. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  14. Coherent terahertz radiation generated from a square-shaped free-electron beam passing through multiple stacked layers with sub-wavelength holes

    NASA Astrophysics Data System (ADS)

    Zhou, Yucong; Zhang, Yaxin; Jiang, Guili; Wu, Zhenhua

    2015-09-01

    This paper presents terahertz (THz) coherent radiation from the interaction between a square-shaped electron beam and guiding wave mode in a multiple stacked layers with sub-wavelength holes structure. The simulated results show that such a guiding wave mode enhances the field intensity in the electron beam channel so that the interaction is more efficient than the electron beam-surface wave interaction in traditional grating and bi-grating structures. This electron-beam-driven THz source provides a way with much simpler fabrication processes and a larger square size electron beam rather than sheet beam. Furthermore, such a source can be integrated to construct a 2D source-array structure, which demonstrates a good opportunity to generate high power THz radiation.

  15. Stack filters

    NASA Astrophysics Data System (ADS)

    Wendt, P. D.; Coyle, E. J.; Gallagher, N. C., Jr.

    1986-08-01

    A large class of easily implemented nonlinear filters called stack filters are discussed which includes the rank order operators in addition to the compositions of morphological operators. Techniques similar to those used to determine the root signal behavior of median filters are employed to study the convergence properties of the filters, and necessary conditions for a stack filter to preserve monotone regions or edges in signals, and the output distribution of the filters, are obtained. Among the stack filters of window width three are found asymmetric median filters in which one removes only positive going edges, the other removes only negative going edges, while the median filter removes impulses of both signs.

  16. Avoiding chromium transport from stainless steel interconnects into contact layers and oxygen electrodes in intermediate temperature solid oxide electrolysis stacks

    NASA Astrophysics Data System (ADS)

    Schlupp, Meike V. F.; Kim, Ji Woo; Brevet, Aude; Rado, Cyril; Couturier, Karine; Vogt, Ulrich F.; Lefebvre-Joud, Florence; Züttel, Andreas

    2014-12-01

    We investigated the ability of (La0.8Sr0.2)(Mn0.5Co0.5)O3-δ (LSMC) and La(Ni0.6Fe0.4)O3-δ (LNF) contact coatings to avoid the transport of Cr from steel interconnects to solid oxide electrolysis electrodes, especially to the anode. The transport of chromium from commercial Crofer 22 APU (ThyssenKrupp) and K41X (AISI441, Aperam Isbergues) steels through LSMC and LNF contact coatings into adjacent (La0.8Sr0.2)MnO3-δ (LSM) oxygen electrodes was investigated in an oxygen atmosphere at 700 °C. Chromium concentrations of up to 4 atom% were detected in the contact coatings after thermal treatments for 3000 h, which also lead to the presence of chromium in adjacent LSM electrodes. Introduction of a dense (Co,Mn)3O4 coating between steel and contact coating was necessary to prevent the diffusion of chromium into contact coatings and electrodes and should lead to extended stack performance and lifetime.

  17. Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.

    PubMed

    Wang, Xing; Liu, Hong-Xia; Fei, Chen-Xi; Yin, Shu-Ying; Fan, Xiao-Jiao

    2015-01-01

    In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (V FB) and the magnitude of gate leakage current density. PMID:25897303

  18. Annealing induced interfacial layers in niobium-clad stainless steel developed as a bipolar plate material for polymer electrolyte membrane fuel cell stacks

    SciTech Connect

    Hong, Sung Tae; Weil, K. Scott; Choi, Jung-Pyung; Bae, In-Tae; Pan, Jwo

    2010-05-01

    Niobium (Nb)-clad 304L stainless steel (SS) manufactured by cold rolling is currently under consideration for use as a bipolar plate material in polymer electrolyte membrane fuel cell (PEMFC) stacks. To make the fabrication of bipolar plates using the Nb-clad SS feasible, annealing may be necessary for the Nb-clad SS to reduce the springback induced by cold rolling. However, the annealing can develop an interfacial layer between the Nb cladding and the SS core and the interfacial layer plays a key role in the failure of the Nb-clad SS as reported earlier [JPS our work]. In this investigation, the Nb-clad SS specimens in as-rolled condition were annealed at different combinations of temperature and time. Based on the results of scanning electron microscope (SEM) analysis, an annealing process map for the Nb-clad SS was obtained. The results of SEM analysis and Transmission Electron Microscope (TEM) analysis also suggest that different interfacial layers occurred based on the given annealing conditions.

  19. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    NASA Astrophysics Data System (ADS)

    Herz, A.; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D.; Schaaf, P.

    2016-03-01

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO3) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  20. 12-Metal 36-membered ring based W(V)-Co(II) layers showing spin-glass behavior.

    PubMed

    Zhao, Liang; Duan, Ran; Zhuang, Peng-Fei; Zheng, Hui; Jiao, Cheng-Qi; Wang, Jun-Li; He, Cheng; Liu, Tao

    2015-07-28

    The present study describes the designed synthesis, X-ray structures, and magnetic properties of two 2D cyano bridged heterobimetallic W(V)-Co(II) networks, {[W(CN)8]2[Co(phpy)4]3}·2CH3OH·2H2O (1) and {[W(CN)8]2[Co(4-spy)4]3}·6H2O (2) (phpy = 4-phenylpyridine, 4-spy = 4-styrylpyridine). Both compounds consist of cyano-bridged 12-metal 36-membered ring units, Co6W6(CN)12, joined by organic linkers into a 2D plane. The layer presents a corrugated configuration in compound 1 and a plane configuration in compound 2 due to different π-π stacking interactions. Magnetic measurements reveal that both 1 and 2 have a transition to the spin glass-like phase due to competitive magnetic interactions. PMID:26076432

  1. Directional Emission from Metal-Dielectric-Metal Structures: Effect of Mixed Metal Layers, Dye Location and Dielectric Thickness

    PubMed Central

    Choudhury, Sharmistha Dutta; Badugu, Ramachandram; Ray, Krishanu; Lakowicz, Joseph R.

    2015-01-01

    Metal-dielectric-metal (MDM) structures provide directional emission close to the surface normal, which offers opportunities for new design formats in fluorescence based applications. The directional emission arises due to near-field coupling of fluorophores with the optical modes present in the MDM substrate. Reflectivity simulations and dispersion diagrams provide a basic understanding of the mode profiles and the factors that affect the coupling efficiency and the spatial distribution of the coupled emission. This work reveals that the composition of the metal layers, the location of the dye in the MDM substrate and the dielectric thickness are important parameters that can be chosen to tune the color of the emission wavelength, the angle of observation, the angular divergence of the emission and the polarization of the emitted light. These features are valuable for displays and optical signage. PMID:25844110

  2. Control of the optical and crystalline properties of TiO{sub 2} in visible-light active TiO{sub 2}/TiN bi-layer thin-film stacks

    SciTech Connect

    Smith, Wilson; Fakhouri, Houssam; Pulpytel, Jerome; Arefi-Khonsari, Farzaneh

    2012-01-15

    Multi-layered thin films of TiO{sub 2} and TiN were created by rf reactive magnetron sputtering, and their crystalline, optical, and photoelectrochemical properties were measured. The overall composition of the films (TiO{sub 2}-to-TiN ratio) was kept constant with the height of each film. The number of layers and thickness of each layer was controlled to create bi-layer thin films that were composed of: 9 bi-layers, 18 bi-layers, 27 bi-layers, 36 bi-layers, and 45 bi-layers. XRD patterns were observed for each film after annealing to measure the grain size and composition of anatase and rutile as a function of temperature. It was found that the phase-transition temperature is able to be substantially controlled (between 550 deg. C and 850 deg. C) for the anatase to rutile transition by varying the number of layers/thickness of each layer. In addition, bi-layer stacking significantly affected the film's optical properties by lowering the bandgap into the visible-light region, and also showed up to three times the improvement in photoelectrochemical performance under uv and visible irradiation. Overall, bi-layer stacking of TiO{sub 2}/TiN films has shown a unique and highly desirable control over several important physical characteristics that can be beneficial for many applications, such as high-temperature sensors and optoelectronic devices.

  3. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 Ω cm by heat treatment at 350 °C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 Ω cm and a refractive index of 2.1.

  4. Imaging the Structure of Grains, Grain Boundaries, and Stacking Sequences in Single and Multi-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Muller, David

    2012-02-01

    Graphene can be produced by chemical vapor deposition (CVD) on copper substrates on up to meter scales [1, 2], making their polycrystallinity [3,4] almost unavoidable. By combining aberration-corrected scanning transmission electron microscopy and dark-field transmission electron microscopy, we image graphene grains and grain boundaries across six orders of magnitude. Atomic-resolution images of graphene grain boundaries reveal that different grains can stitch together via pentagon-heptagon pairs. We use diffraction-filtered electron imaging to map the shape and orientation of several hundred grains and boundaries over fields of view of a hundred microns. Single, double and multilayer graphene can be differentiated, and the stacking sequence and relative abundance of sequences can be directly imaged. These images reveal an intricate patchwork of grains with structural details depending strongly on growth conditions. The imaging techniques enabled studies of the structure, properties, and control of graphene grains and grain boundaries [5]. [4pt] [1] X. Li et al., Science 324, 1312 (2009).[0pt] [2] S. Bae et al., Nature Nanotechnol. 5, 574 (2010).[0pt] [3] J. M. Wofford, et al., Nano Lett., (2010).[0pt] [4] P. Y. Huang, et al., Nature 469, 389--392 (2011); arXiv:1009.4714, (2010)[0pt] [5] In collaboration with Pinshane Y. Huang, C. S. Ruiz-Vargas, A. M. van der Zande, A. W. Tsen, L. Brown, R. Hovden, F. Ghahari, W. S. Whitney, M.P. Levendorf, J. W. Kevek, S. Garg, J. S. Alden, C. J. Hustedt, Y. Zhu, N. Petrone, J. Hone, J. Park, P. L. McEuen

  5. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

    NASA Astrophysics Data System (ADS)

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-05-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a

  6. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  7. Liquid exfoliation of alkyl-ether functionalised layered metal-organic frameworks to nanosheets.

    PubMed

    Foster, Jonathan A; Henke, Sebastian; Schneemann, Andreas; Fischer, Roland A; Cheetham, Anthony K

    2016-08-18

    We report the synthesis of a 2D-layered metal-organic framework incorporating weakly interacting chains designed to aid exfoliation of the layers into nanosheets. Dispersion of the nanosheets exposes labile metal-sites which are shown to exchange solvent molecules allowing the nanosheets to act as sensors in suspension. PMID:27452790

  8. Stacked insulator induction accelerator gaps

    SciTech Connect

    Houck, T.I.; Westenskow, G.A.; Kim, J.S.; Eylon, S.; Henestroza, E.; Yu, S.S.; Vanecek, D.

    1997-05-01

    Stacked insulators, with alternating layers of insulating material and conducting film, have been shown to support high surface electrical field stresses. We have investigated the application of the stacked insulator technology to the design of induction accelerator modules for the Relativistic-Klystron Two-Beam Accelerator program. The rf properties of the accelerating gaps using stacked insulators, particularly the impedance at frequencies above the beam pipe cutoff frequency, are investigated. Low impedance is critical for Relativistic-Klystron Two-Beam Accelerator applications where a high current, bunched beam is trsnsported through many accelerating gaps. An induction accelerator module designs using a stacked insulator is presented.

  9. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  10. Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer

    NASA Astrophysics Data System (ADS)

    Dodd, Linzi E.; Shenton, Samantha A.; Gallant, Andrew J.; Wood, David

    2015-05-01

    Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the to range, the performance of the diodes is excellent, with a value of zero-bias curvature coefficient (CCZB) that can be up to . For higher temperature treatments, the value of CCZB decreases to a maximum of . Similar trends in AC tests can be seen for voltage and current responsivity values.

  11. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  12. Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture

    PubMed Central

    2011-01-01

    A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves. PMID:21711632

  13. The chromospheric and transition layer emission of stars with different metal abundances

    NASA Technical Reports Server (NTRS)

    Boehm-Vitense, E.

    1981-01-01

    Preliminary results on observations of chromospheric and transition layer emission of stars with different metal abundances are reported. Metal deficient stars generally show reduced emission in the Mg II resonance lines and also in the other chromospheric and transition layer emission lines. This is interpreted as showing that energy fluxes other than acoustic fluxes must at least be coresponsible for the coronal and transition layer heating.

  14. A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C

    NASA Astrophysics Data System (ADS)

    Spry, D. J.; Lukco, D.

    2012-05-01

    We investigate use of tantalum silicide (TaSi2, 400 nm)/platinum (Pt, 200 nm)/iridium (Ir, 200 nm)/platinum (Pt, 200 nm) as both a bond metal and a diffusion barrier to prevent oxygen (from air) and gold (from the wire bond) from infiltrating silicon carbide (SiC) monolithically integrated circuits operating above 500°C for over 1000 h in air. The TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. It can be used directly on ohmic contact metals, dielectric insulating layers, or interconnect metal, because it adheres to silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium (Ti). In this study, we investigate use of the new metallization of TaSi2/Pt/Ir/Pt (in deposition order) with TaSi2 resting on top of a Ti-SiC contact annealed at 600°C for 30 min in nitrogen, which allows the TaSi2 layer to react with the bottom platinum layer to form the Pt2Si diffusion barrier at the Pt-Ir interface. Since the iridium layer does not readily form a silicide, it prevents the silicon from migrating into the topmost platinum layer during further annealing or high-temperature integrated circuit operation. This leaves a pure platinum layer at the surface, ideal for gold wire bonding. We discuss the characteristics of the TaSi2/Pt/Ir/Pt metallization at 500°C after 10 h, 100 h, and 1000 h in air ambient and N2 ambient. Auger electron spectroscopy (AES) depth profiles of the metallization and field-emission scanning electron microscopy-focused ion beam (FESEM-FIB) cross-sections are also discussed.

  15. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  16. Influence of head size on the development of metallic wear and on the characteristics of carbon layers in metal-on-metal hip joints

    PubMed Central

    Sprecher, Christoph M; Wimmer, Markus A; Milz, Stefan; Taeger, Georg

    2009-01-01

    Background and purpose Particles originating from the articulating surfaces of hip endoprostheses often induce an inflammatory response, which can be related to implant failure. We therefore analyzed the metal content in capsular tissue from 44 McKee-Farrar metal-on-metal hip prostheses (with 3 different head sizes) and we also analyzed the morphological structure of layers located on articulating surfaces. Methods Atomic absorption spectrometry (AAS) was used to analyze the metal content in capsular tissue. Visually detectable carbon layers located on the articulating surfaces were evaluated using scanning electron microscopy (SEM), energy-dispersive Xray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). Results Metallic debris was detected in all capsular tissue samples but no statistically significant differences in metal content were found in relation to implant head size. The morphological characteristics of the different layer zones allowed an exact analysis of contact and non-contact areas. Furthermore, surface layers appear to have a protective function because they can prevent sharp-edged particles from damaging the prostheses surface. Interpretation The implant head size does not appear to influence the amount of metallic debris. The layers obviously act like a lubricating agent because the protection function does not occur in regions without layers where the metal surface often shows numerous scratches. As layers are not generated immediately after the implantation of hip prostheses, these findings may at least partially explain the high amount of wear early after implantation. PMID:19421914

  17. X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources

    NASA Astrophysics Data System (ADS)

    Velling, P.; Keiper, D.; Brennemann, A.; Agethen, M.; Janssen, G.; Bertenburg, R. M.

    2003-02-01

    Stacked layer sequences of InP-based HBT and HEMT are of interest for today's (OC-768) and tomorrows (OC-3072, 100 Gbit Ethernet) communication standards. The better low noise performance of the HEMT can be combined with the driver capability of the HBT while also a PIN-photodiode can be provided by the HBT base-collector-diode. However this results in a complex procedure for MOVPE growth process development. For a reliable fabrication of complex radio frequency (opto-)electronic circuit applications a quantitative InP process technology control is necessary starting at the level of device epilayer stacks. In this report the detailed characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turn-around time for the statistical process control (SPC).

  18. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. PMID:27181758

  19. Structural color-tunable mesoporous bragg stack layers based on graft copolymer self-assembly for high-efficiency solid-state dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Chang Soo; Park, Jung Tae; Kim, Jong Hak

    2016-08-01

    We present a facile fabrication route for structural color-tunable mesoporous Bragg stack (BS) layers based on the self-assembly of a cost-effective graft copolymer. The mesoporous BS layers are prepared through the alternating deposition of organized mesoporous-TiO2 (OM-TiO2) and -SiO2 (OM-SiO2) films on the non-conducting side of the counter electrode in dye-sensitized solar cells (DSSCs). The OM layers with controlled porosity, pore size, and refractive index are templated with amphiphilic graft copolymers consisting of poly(vinyl chloride) backbones and poly(oxyethylene methacrylate) side chains, i.e., PVC-g-POEM. The morphology and properties of the structural color-tunable mesoporous BS-functionalized electrodes are characterized using energy filtered transmission electron microscopy (EF-TEM), field emission-scanning electron microscopy (FE-SEM), spectroscopic ellipsometry, and reflectance spectroscopy. The solid-state DSSCs (ssDSSCs) based on a structural color-tunable mesoporous BS counter electrode with a single-component solid electrolyte show an energy conversion efficiency (η) of 7.1%, which is much greater than that of conventional nanocrystalline TiO2-based cells and one of the highest values for N719 dye-based ssDSSCs. The enhancement of η is due to the enhancement of current density (Jsc), attributed to the improved light harvesting properties without considerable decrease in fill factor (FF) or open-circuit voltage (Voc), as confirmed by incident photon-to-electron conversion efficiency (IPCE) and electrochemical impedance spectroscopy (EIS).

  20. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance–voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  1. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tekcan, Burak; Ozgit-Akgun, Cagla; Bolat, Sami; Biyikli, Necmi; Okyay, Ali Kemal

    2014-10-01

    Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

  2. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    NASA Astrophysics Data System (ADS)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  3. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

    PubMed

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-01-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes. PMID:25692264

  4. Influence of metal bonding layer on strain transfer performance of FBG

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Chen, Weimin; Zhang, Peng; Liu, Li; Shu, Yuejie; Wu, Jun

    2013-01-01

    Metal bonding layer seriously affects the strain transfer performance of Fiber Bragg Grating (FBG). Based on the mode of FBG strain transfer, the influence of the length, the thickness, Poisson's ratio, elasticity modulus of metal bonding layer on the strain transfer coefficient of FBG is analyzed by numerical simulation. FBG is packaged to steel wire using metal bonding technology of FBG. The tensile tests of different bonding lengths and elasticity modulus are carried out. The result shows the strain transfer coefficient of FBGs are 0.9848,0.962 and their average strain sensitivities are 1.076 pm/μɛ,1.099 pm/μɛ when the metal bonding layer is zinc, whose lengths are 15mm, 20mm, respectively. The strain transfer coefficient of FBG packaged by metal bonding layer raises 8.9 percent compared to epoxy glue package. The preliminary experimental results show that the strain transfer coefficient increases with the length of metal bonding layer, decreases with the thickness of metal bonding layer and the influence of Poisson's ratio can be ignored. The experiment result is general agreement with the analysis and provides guidance for metal package of FBG.

  5. Stacking Up

    ERIC Educational Resources Information Center

    Naylor, Jim

    2005-01-01

    Chimneys and stacks appear to be strong and indestructible, but chimneys begin to deteriorate from the moment they are built. Early on, no signs are apparent; but deterioration accelerates in subsequent years, and major repairs are soon needed instead of minor maintenance. With proper attention, most structures can be repaired and continue to…

  6. Microstructural and failure characteristics of metal-lntermetallic layered sheet composites

    NASA Astrophysics Data System (ADS)

    Alman, D. E.; Rawers, J. C.; Hawk, J. A.

    1995-03-01

    A processing technique for the fabrication of layered metal-intermetallic composites is presented, in which a self-propagating, high-temperature synthesis reaction (SHS) was initiated at the interface between dissimilar elemental metal foils. The resultant composite microstructure consisted of a fully dense, well-bonded metal-intermetallic layered composite. In this United States Bureau of Mines study, metal (Fe, Ni, or Ti) foils were reacted with Al foils to produce metal-metal aluminide layered composites. Tensile tests conducted at room temperature revealed that composites could be designed to behave in a high-strength and high-toughness manner by altering the thicknesses of the starting elemental foils. Failure characteristics revealed that the processes that govern ductile vs brittle behavior of the composites occur early in the fracture.

  7. Ionic polymer-metal composite actuators based on triple-layered polyelectrolytes composed of individually functionalized layers.

    PubMed

    Lee, Jang-Woo; Yoo, Young-Tai; Lee, Jae Yeol

    2014-01-22

    Ionic polymer-metal composite (IPMC) actuators based on two types of triple-layered Nafion composite membranes were prepared via consecutive solution recasting and electroless plating methods. The triple-layered membranes are composed of a Nafion layer containing an amphiphilic organic molecule (10-camphorsulfonic acid; CSA) in the middle section (for fast and large ion conduction) and two Nafion/modified inorganic composite layers in the outer sections (for large accumulation/retention of mobile ions). For construction of the two types of IPMCs, sulfonated montmorillonite (MMT) and polypyrrole (PPy)-coated alumina fillers were incorporated into the outer layers. Both the triple-layered IPMCs exhibited 42% higher tip displacements at the maximum deflections with a negligible back-relaxation, 50-74% higher blocking forces, and more rapid responses under 3 V dc, compared with conventional single-layered Nafion-IPMCs. Improvements in cyclic displacement under a rectangular voltage input of 3 V at 1 Hz were also made in the triple-layered configurations. Compared with single-layered IPMCs consisting of the identical compositions with the respective outer composite layers, the bending rates and energy efficiencies of both the triple-layered IPMCs were significantly higher, although the blocking forces were a bit lower. These remarkable improvements were attributed to higher capacitances and Young's moduli as well as a more efficient transport of mobile ions and water through the middle layer (Nafion/CSA) and a larger accumulation/retention of the mobile species in the outer functionalized inorganic composite layers. Especially, the triple-layered IPMC with the PPy-modified alumina registered the best actuation performance among all the samples, including a viable actuation even at a low voltage of 1.5 V due to involving efficient redox reactions of PPy with the aid of hygroscopic alumina. PMID:24383744

  8. Arbitrarily shaped dual-stacked patch antennas: A hybrid FEM simulation

    NASA Technical Reports Server (NTRS)

    Gong, Jian; Volakis, John L.

    1995-01-01

    A dual-stacked patch antenna is analyzed using a hybrid finite element - boundary integral (FE-BI) method. The metallic patches of the antenna are modeled as perfectly electric conducting (PEC) plates stacked on top of two different dielectric layers. The antenna patches may be of any shape and the lower patch is fed by a coaxial cable from underneath the ground plane or by an aperture coupled microstrip line. The ability of the hybrid FEM technique for the stacked patch antenna characterization will be stressed, and the EM coupling mechanism is also discussed with the aid of the computed near field patterns around the patches.

  9. Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Gupta, Richa; Rajput, Renu; Prasher, Rakesh; Vaid, Rakesh

    2016-09-01

    We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO2 gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and morphological studies. Electrical parameters such as dielectric constant (K), interface trap density (Dit), leakage current density (J), effective oxide charge (Qeff), barrier height (Φbo), ideality factor (ƞ), breakdown-voltage (Vbr) and series resistance (Rs) were extracted through C-V, G-V and I-V measurements. The determined values of K, Dit, J, Qeff, Φbo, ƞ, Vbr and Rs are 14.4, 0.5 × 10 11 eV-1 cm-2, 2.2 × 10-9 A/cm2, 0.3 × 1013 cm-2, 0.42, 2.1, -0.33 and 14.5 MΩ respectively. SiON growth prior to HfO2 deposition has curtailed the problem of high leakage current density and interfacial traps due to sufficient amount of N2 incorporated at the interface.

  10. Proximity Effect in BSCCO Intrinsic Josephson Junctions Contacted with a Normal Metal Layer

    NASA Astrophysics Data System (ADS)

    Suzuki, Minoru; Koizumi, Masayuki; Ohmaki, Masayuki; Kakeya, Itsuhiro; Shukrinov, Yu. M.

    Superconductivity proximity effect is numerically evaluated based on McMillan's tunneling proximity model for a sandwich of a normal metal layer on top of the surface superconducting layer of intrinsic Josephson junctions in a Bi2Sr2CaCu2O8+δ (BSCCO) crystal. Due to the very thin thickness of 0.3 nm of the superconducting layer in IJJs, the surface layer is subject to influence of the proximity effect when the top layer is contacted with a normal metal layer. The effect manifests itself as a significant change in the characteristics of the IJJ surface Josephson junction. It is found that when the superconducting layer thickness is smaller than 0.6 nm, the pair potential reduces significantly, leading to an almost complete suppression of the critical Josephson current density for the surface junction. This result can partly explain the experimental results on the IJJ characteristics of a mesa type structure.

  11. The Deformation of the Multi-Layered Panel of Sheet Metals Under Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Wook; Woo, Dong-Uk

    A Molten Carbonate Fuel Cell (MCFC) stack consists of several layered unit cells. In each unit cell, the stiff structure of the separator plate contains the softer components, such as electrodes. When surface pressure acts on the stack over an extended period of time at elevated temperatures, the stiffness of the separator plate tends to degrade. Moreover, the demands for large electrode area (to increase the electric capacity of a unit cell) and thinner separator plates (to reduce weight) complicate the design of a separator plate with high stiffness. To evaluate the stiffness of the separator plate at elevated temperatures, we design and test a tiny, multi-layered separator plate specimen using a three-point bending tool. To determine the optimal structure of the separator plate, we investigate three design factors: angle, pitch and height. We adopt the Taguchi method to evaluate the experiments, and use finite element analysis to examine the experimental results. Based on these results, pitch is the most effective of these factors. As the pitch narrows, the stiffness of the separator plate increases. Therefore, we propose the pitch factor as a design criterion for the separator plate of the MCFC stack.

  12. Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

    DOEpatents

    Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

    2014-04-01

    A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

  13. Image stacking approach to increase sensitivity of fluorescence detection using a low cost complementary metal-oxide-semiconductor (CMOS) webcam.

    PubMed

    Balsam, Joshua; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2012-01-01

    Optical technologies are important for biological analysis. Current biomedical optical analyses rely on high-cost, high-sensitivity optical detectors such as photomultipliers, avalanched photodiodes or cooled CCD cameras. In contrast, Webcams, mobile phones and other popular consumer electronics use lower-sensitivity, lower-cost optical components such as photodiodes or CMOS sensors. In order for consumer electronics devices, such as webcams, to be useful for biomedical analysis, they must have increased sensitivity. We combined two strategies to increase the sensitivity of CMOS-based fluorescence detector. We captured hundreds of low sensitivity images using a Webcam in video mode, instead of a single image typically used in cooled CCD devices.We then used a computational approach consisting of an image stacking algorithm to remove the noise by combining all of the images into a single image. While video mode is widely used for dynamic scene imaging (e.g. movies or time-lapse photography), it is not used to capture a single static image, which removes noise and increases sensitivity by more than thirty fold. The portable, battery-operated Webcam-based fluorometer system developed here consists of five modules: (1) a low cost CMOS Webcam to monitor light emission, (2) a plate to perform assays, (3) filters and multi-wavelength LED illuminator for fluorophore excitation, (4) a portable computer to acquire and analyze images, and (5) image stacking software for image enhancement. The samples consisted of various concentrations of fluorescein, ranging from 30 μM to 1000 μM, in a 36-well miniature plate. In the single frame mode, the fluorometer's limit-of-detection (LOD) for fluorescein is ∼1000 μM, which is relatively insensitive. However, when used in video mode combined with image stacking enhancement, the LOD is dramatically reduced to 30 μM, sensitivity which is similar to that of state-of-the-art ELISA plate photomultiplier-based readers. Numerous medical

  14. The Deep2 Galaxy Redshift Survey: Mean Ages and Metallicities ofRed Field Galaxies at Z ~; 0.9 from Stacked Keck/Deimos Spectra

    SciTech Connect

    Schiavon, Ricardo P.; Faber, S.M.; Konidaris, Nicholas; Graves,Genevieve; Willmer, Christopher N.A.; Weiner, Benjamin J.; Coil, AlisonL.; Cooper, Michael C.; Davis, Marc; Harker, Justin; Koo, David C.; Newman, Jeffrey A.; Yan, Renbin

    2006-10-19

    As part of the DEEP2 galaxy redshift survey, we analyze absorption line strengths in stacked Keck/DEIMOS spectra of red field galaxies with weak to no emission lines, at redshifts 0.7 {approx}< z {approx}< 1. Comparison with models of stellar population synthesis shows that red galaxies at z {approx} 0:9 have mean luminosity-weighted ages of the order of only 1 Gyr and at least solar metallicities. These ages cannot be reconciled with a scenario where all stars evolved passively after forming at very high z. Rather, a significant fraction of stars can be no more than 1 Gyr old, which means that some star formation in the stacked populations continued to at least z {approx} 1:2. Furthermore, a comparison of these distant galaxies with a local SDSS sample, using stellar populations synthesis models, shows that the drop in the equivalent width of H{delta} from z {approx} 0:9 to 0.1 is less than predicted by passively evolving models. This admits of two interpretations: either each individual galaxy experiences continuing low-level star formation, or the red-sequence galaxy population from z {approx} 0:9 to 0.1 is continually being added to by new galaxies with younger stars.

  15. ZnO buffer layer for metal films on silicon substrates

    DOEpatents

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  16. The work function in the case of thin metallic layers

    NASA Astrophysics Data System (ADS)

    Chrzanowski, Janusz

    2005-08-01

    The investigations of electrons collective excitations on metal surface is important for deeper understanding both the metal properties and the response of the metal to an accident electromagnetic radiation. It is a matter of common knowledge that the properties of metal can be substantially modified as its physical dimension are reduced to the nanoscale. In such case a lot of experiments have shown the variation of work function, but there still exist the discrepancy between them and theoretical results. It seems to be really important to push the theory just a bit further. Here the work function is exactly defined function of the electron density and wave number what allows to take into account an influence of the uncertainty principle in obtained results.

  17. Emerging interface dipole versus screening effect in copolymer/metal nano-layered systems

    NASA Astrophysics Data System (ADS)

    Torrisi, V.; Ruffino, F.; Liscio, A.; Grimaldi, M. G.; Marletta, G.

    2015-12-01

    Despite to the importance on the charge carrier injection and transport at organic/metal interface, there is yet an incomplete estimation of the various contribution to the overall dipole. This work shows how the mapping of the surface potential performed by Kelvin Probe Force Microscopy (KPFM) allows the direct observation of the interface dipole within an organic/metal multilayered structure. Moreover, we show how the sub-surface sensitivity of the KPFM depends on the thickness and surface coverage of the metallic layer. This paper proposes a way to control the surface potential of the exposed layer of an hybrid layered system by controlling the interface dipole at the organic/metal interface as a function of the nanometer scale thickness and the surface coverage of the metallic layer. We obtained a layered system constituted by repeated sequence of a copolymer film, poly(n-butylacrylate)-b-polyacrilic acid, and Au layer. We compared the results obtained by means of scanning probe microscopy technique with the results of the KPFM technique, that allows us to obtain high-contrast images of the underlying layer of copolymer behind a typical threshold, on the nanoscale, of the thickness of the metal layer. We considered the effect of the morphology of the gold layer on the covered area at different thicknesses by using the scanning electron microscopy technique. This finding represents a step forward towards the using of dynamic atomic force microscopy based characterization to explore the electrical properties of the sub-surface states of layered nanohybrid, that is a critical point for nanohybrid applications in sensors and energy storage devices.

  18. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler–Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  19. Spectral and total temperature-dependent emissivities of few-layer structures on a metallic substrate.

    PubMed

    Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe

    2016-01-25

    We investigate the thermal radiative emission of few-layer structures deposited on a metallic substrate and its dependence on temperature with the Fluctuational Electrodynamics approach. We highlight the impact of the variations of the optical properties of metallic layers on their temperature-dependent emissivity. Fabry-Pérot spectral selection involving at most two transparent layers and one thin reflective layer leads to well-defined peaks and to the amplification of the substrate emission. For a single Fabry-Pérot layer on a reflective substrate, an optimal thickness that maximizes the emissivity of the structure can be determined at each temperature. A thin lossy layer deposited on the previous structure can enhance interference phenomena, and the analysis of the participation of each layer to the emission shows that the thin layer is the main source of emission. Eventually, we investigate a system with two Fabry-Pérot layers and a metallic thin layer, and we show that an optimal architecture can be found. The total hemispherical emissivity can be increased by one order of magnitude compared to the substrate emissivity. PMID:26832589

  20. The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors

    NASA Astrophysics Data System (ADS)

    Yoshida, Shinichi; Taniguchi, Satoshi; Minari, Hideki; Lin, Dennis; Ivanov, Tsvetan; Watanabe, Heiji; Nakazawa, Masashi; Collaert, Nadine; Thean, Aaron

    2016-08-01

    We investigated the effect of a thin interfacial layer (IL) made of silicon or germanium between high-k dielectrics and III–V semiconductors on the frequency dispersion of the capacitance–voltage (C–V) curves in detail. We demonstrated experimentally that the frequency dispersion at accumulation voltage is strongly dependent on the energy barrier height (ΦB) between high-k dielectrics and semiconductors. It was revealed that the improvement of frequency dispersion for n-type III–V semiconductors with IL is attributed to the increase in ΦB realized by inserting Ge IL. Moreover, the border trap density did not necessarily decrease with IL through the assessment of border trap density using a distributed bulk-oxide trap model. Finally, we proved that it is important to increase ΦB to suppress the carrier exchange and improve high-k/III–V gate stack reliability.

  1. Surface plasmon sensing with different metals in single and double layer configurations.

    PubMed

    Nesterenko, Dmitry V; Saif-ur-Rehman; Sekkat, Zouheir

    2012-09-20

    The resolution of surface plasmon resonance sensors in the geometry of Kretschmann is estimated by numerical simulation for different thicknesses of combinations of silver (Ag), copper, and aluminum (Al) metallic layers with a gold coating layer at set of wavelengths in cases of detecting the change of the refractive index of the bulk medium and the change in optical thickness of an adsorption layer. The lowest resolution among the examined combinations of the sensors is achieved with a single Al layer for ultraviolet region and with a single Ag layer for longer wavelengths. PMID:23205393

  2. Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers

    NASA Astrophysics Data System (ADS)

    Lutzer, B.; Simsek, S.; Zimmermann, C.; Stoeger-Pollach, M.; Bethge, O.; Bertagnolli, E.

    2016-03-01

    In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO2 insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V2 is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm2 and a leakage current of less than 1.2 × 10-8 A/cm2 at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing the formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.

  3. Iridium Interfacial Stack - IrIS

    NASA Technical Reports Server (NTRS)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  4. Layer-by-Layer Deposition with Polymers Containing Nitrilotriacetate, A Convenient Route to Fabricate Metal- and Protein-Binding Films.

    PubMed

    Wijeratne, Salinda; Liu, Weijing; Dong, Jinlan; Ning, Wenjing; Ratnayake, Nishanka Dilini; Walker, Kevin D; Bruening, Merlin L

    2016-04-27

    This paper describes a convenient synthesis of nitrilotriacetate (NTA)-containing polymers and subsequent layer-by-layer adsorption of these polymers on flat surfaces and in membrane pores. The resulting films form NTA-metal-ion complexes and capture 2-3 mmol of metal ions per mL of film. Moreover, these coatings bind multilayers of polyhistidine-tagged proteins through association with NTA-metal-ion complexes. Inclusion of acrylic acid repeat units in NTA-containing copolymers promotes swelling to increase protein binding in films on Au-coated wafers. Adsorption of NTA-containing films in porous nylon membranes gives materials that capture ∼46 mg of His-tagged ubiquitin per mL. However, the binding capacity decreases with the protein molecular weight. Due to the high affinity of NTA for metal ions, the modified membranes show modest leaching of Ni(2+) in binding and rinsing buffers. Adsorption of NTA-containing polymers is a simple method to create metal- and protein-binding films and may, with future enhancement of stability, facilitate development of disposable membranes that rapidly purify tagged proteins. PMID:27042860

  5. LOW VELOCITY IMPACT RESPONSE OF A LAMINATED COMPOSITE TUBE WITH A METALLIC BUMPER LAYER

    SciTech Connect

    Ibekwe, S.I.; Li, G.; Pang, S.S.; and Smith, B. H.

    2006-07-01

    A thin metallic sheet was bonded to the outer surface of a laminated composite curved beam as a bumper layer. It was believed that a metallic bumper layer such as an aluminum thin sheet would be able to intercept any lateral impacting force and absorb impact energy through plastic deformation. Since aluminum is comparatively light weight, a thin sheet will not result in a significant increase in structural weight. Results showed that impact damage occurred primarily in the bumper layer, thereby resulting in a much higher residual bending strength compared to the control specimen.

  6. Noise and vibration level reduction by covering metal structures with layers of damping materials. [considering viscoelastic insulation layers

    NASA Technical Reports Server (NTRS)

    Rugina, I.; Paven, H. T. O.

    1974-01-01

    One of the most important methods of reducing the noise and vibration level is the damping of the secondary sources, such as metal plates, often used in vehicle structures, by means of covering materials with high internal viscosity. Damping layers are chosen at an optimum thickness corresponding to the frequency and temperature range in which a certain structure works. The structure's response corresponding to various real situations is analyzed by means of a measuring chain including electroacoustical or electromechanical transducers. The experimental results provide the dependence of the loss factor and damping transmission coefficient as a function of the damping layer thickness or of the frequency for various viscoelastic covering materials.

  7. Electric Double-Layer Effects Induce Separation of Aqueous Metal Ions.

    PubMed

    Ji, Qinghua; An, Xiaoqiang; Liu, Huijuan; Guo, Lin; Qu, Jiuhui

    2015-11-24

    Metal ion separation is crucial to environmental decontamination, chromatography, and metal recovery and recycling. Theoretical studies have suggested that the ion distributions in the electric double-layer (EDL) region depend on the nature of the ions and the characteristics of the charged electrode surface. We believe that rational design of the electrode material and device structure will enable EDL-based devices to be utilized in the separation of aqueous metal ions. On the basis of this concept, we fabricate an EDL separation (EDLS) device based on sandwich-structured N-functionalized graphene sheets (CN-GS) for selective separation of aqueous toxic heavy metal ions. We demonstrate that the EDLS enables randomly distributed soluble ions to form a coordination-driven layer and electrostatic-driven layer in the interfacial region of the CN-GS/solution. Through tuning the surface potential of the CN-GS, the effective separation of heavy metal ions (coordination-driven layer) from alkali or alkaline earth metal ions (electrostatic-driven layer) can be achieved. PMID:26481603

  8. Spin tuning of electron-doped metal-phthalocyanine layers.

    PubMed

    Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

    2014-04-01

    The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state. PMID:24635343

  9. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures

    PubMed Central

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A’B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA’, AB and AB’ stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  10. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.

    PubMed

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A'B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA', AB and AB' stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  11. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te).

    PubMed

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F L; Chantrell, Roy W; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  12. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    PubMed Central

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  13. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  14. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    DOEpatents

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  15. Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

    NASA Astrophysics Data System (ADS)

    Bilo, Fabjola; Borgese, Laura; Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina; Pazzaglia, Ugo; Depero, Laura E.

    2015-12-01

    We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co-Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO2. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO2 layer, the lower is the metal migration.

  16. Kondo Effects in Single Layer Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Phillips, Michael; Aji, Vivek

    2015-03-01

    Inversion symmetry breaking and strong spin orbit coupling in two dimensional transition metal dichalcogenides leads to interesting new phenomena such as the valley hall and spin hall effects. They display optical circular dichroism and the ability to generate excitation with valley specificity. In this talk we report on the consequences of these properties on correlated states in hole doped systems focussing on the physics of the screening of magnetic impurities. Unlike typical metals, the breaking of inversion symmetry leads to the mixing of a triplet component to the Kondo cloud. Using a variational wave function approach we determine the nature of the many body state. With the ground state in hand we analyze the excitations generated by valley discriminating perturbations. Graduate Student.

  17. Metallic stereostructured layer: An approach for broadband polarization state manipulation

    SciTech Connect

    Xiong, Xiang; Hu, Yuan-Sheng; Jiang, Shang-Chi; Hu, Yu-Hui; Fan, Ren-Hao; Ma, Guo-Bin; Shu, Da-Jun; Peng, Ru-Wen; Wang, Mu

    2014-11-17

    In this letter, we report a full-metallic broadband wave plate assembled by standing metallic L-shaped stereostructures (LSSs). We show that with an array of LSSs, high polarization conversion ratio is achieved within a broad frequency band. Moreover, by rotating the orientation of the array of LSSs, the electric components of the reflection beam in two orthogonal directions and their phase difference can be independently tuned. In this way, all the polarization states on the Poincaré sphere can be realized. As examples, the functionalities of a quarter wave plate and a half wave plate are experimentally demonstrated with both reflection spectra and focal-plane-array imaging. Our designing provides a unique approach in realizing the broadband wave plate to manipulate the polarization state of light.

  18. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    PubMed

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth. PMID:26999431

  19. Layered metal sulfides: Exceptionally selective agents for radioactive strontium removal

    PubMed Central

    Manos, Manolis J.; Ding, Nan; Kanatzidis, Mercouri G.

    2008-01-01

    In this article, we report the family of robust layered sulfides K2xMnxSn3-xS6 (x = 0.5–0.95) (KMS-1). These materials feature hexagonal [MnxSn3-xS6]2x− slabs of the CdI2 type and contain highly mobile K+ ions in their interlayer space that are easily exchangeable with other cations and particularly strontium. KMS-1 display outstanding preference for strontium ions in highly alkaline solutions containing extremely large excess of sodium cations as well as in acidic environment where most alternative adsorbents with oxygen ligands are nearly inactive. The implication of these results is that simple layered sulfides should be considered for the efficient remediation of certain nuclear wastes. PMID:18316731

  20. Topological phase transition in layered transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha-Jun; Chang, Kee Joo

    Despite considerable interests in transition metal dichalcogenides (TMDs), such as MX2 with M = (Mo, W) and X = (S, Se, Te), the physical origin of their topological nature is still in its infancy. The conventional view of topological phase transition (TPT) in TMDs is that the band inversion occurs between the metal d and chalcogen p orbital bands. More precisely, the former is pulled down below the latter. Here we introduce an explicit scheme for analyzing TPT in topological materials and find that the TPT in TMDs is different from the conventional speculation. When the 1T phase undergoes a structural transformation to the 1T' phase in monolayer MX2, the band topology changes from trivial to non-trivial, leading to the TPT. We discuss the exact role of the metal d and chalcogen p orbital bands during the TPT. Our finding would provide clear guidelines for understanding the topological nature not only in TMDs but also in other topological materials yet to be explored.

  1. Current density and catalyst-coated membrane resistance distribution of hydro-formed metallic bipolar plate fuel cell short stack with 250 cm2 active area

    NASA Astrophysics Data System (ADS)

    Haase, S.; Moser, M.; Hirschfeld, J. A.; Jozwiak, K.

    2016-01-01

    An automotive fuel cell with an active area of 250 cm2 is investigated in a 4-cell short stack with a current and temperature distribution device next to the bipolar plate with 560 current and 140 temperature segments. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this current scan shunt module. The applied fuel cell consists of bipolar plates constructed of 75-μm-thick, welded stainless-steel foils and a graphitic coating. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this module with a 6% deviation in in-plane conductivity. The current density distribution is evaluated up to 2.4 A cm-2. The entire cell's investigated volumetric power density is 4.7 kW l-1, and its gravimetric power density is 4.3 kW kg-1 at an average cell voltage of 0.5 V. The current density distribution is determined without influencing the operating cell. In addition, the current density distribution in the catalyst-coated membrane and its effective resistivity distribution with a finite volume discretisation of Ohm's law are evaluated. The deviation between the current density distributions in the catalyst-coated membrane and the bipolar plate is determined.

  2. Stitching 2D polymeric layers into flexible interpenetrated metal-organic frameworks within single crystals.

    PubMed

    Zhang, Zi-Xuan; Ding, Ni-Ni; Zhang, Wen-Hua; Chen, Jin-Xiang; Young, David J; Hor, T S Andy

    2014-04-25

    A 2D coordination polymer prepared with bulky diethylformamide solvates exhibits channels which allow dipyridyl bridging ligands to diffuse into the crystal lattice. The absorbed dipyridyls thread through the pores of one layer and substitute the surface diethylformamide molecules on the neighboring layers to stitch alternate layers to form flexible interpenetrated metal-orgaic frameworks. The threading process also results in exchange of the bulky diethylformamide solvates for aqua to minimize congestion and, more strikingly, forces the slippage of two-dimensional layers, while still maintaining crystallinity. PMID:24692130

  3. Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

    NASA Astrophysics Data System (ADS)

    Jung, Y.; Cheng, X.

    2014-09-01

    High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor.

  4. Interphase layer optimization for metal matrix composites with fabrication considerations

    NASA Technical Reports Server (NTRS)

    Morel, M.; Saravanos, D. A.; Chamis, C. C.

    1991-01-01

    A methodology is presented to reduce the final matrix microstresses for metal matrix composites by concurrently optimizing the interphase characteristics and fabrication process. Application cases include interphase tailoring with and without fabrication considerations for two material systems, graphite/copper and silicon carbide/titanium. Results indicate that concurrent interphase/fabrication optimization produces significant reductions in the matrix residual stresses and strong coupling between interphase and fabrication tailoring. The interphase coefficient of thermal expansion and the fabrication consolidation pressure are the most important design parameters and must be concurrently optimized to further reduce the microstresses to more desirable magnitudes.

  5. Microwave shielding enhancement of high-transparency, double-layer, submillimeter-period metallic mesh

    NASA Astrophysics Data System (ADS)

    Lu, Zhengang; Wang, Heyan; Tan, Jiubin; Lin, Shen

    2014-12-01

    We demonstrate both theoretically and experimentally that the microwave-shielding effectiveness of a double-layer metallic mesh with a submillimeter period can be improved by increasing the separation between the two mesh layers (without affecting transmittance). This double-layer mesh consists of two layers of square aluminum mesh separated by a quartz-glass substrate. By increasing the substrate's optical thickness from zero to λ/4 of the shielding band's upper frequency, the shielding of the double-layer mesh improves considerably, owing to the increased reflectivity of the double-layer mesh with increasing separation in the low-frequency band. A Ku-band shielding effectiveness of over 32 dB is observed for the double-layer mesh with a normalized visible transmittance greater than 91%. It is found that the electromagnetic shielding effectiveness is enhanced by over 7 dB (80.0% energy attenuation) across the Ku-band, compared with that of a single-layer mesh, while the optical transmittances are almost identical for both tested structures. Such an enhancement permits the design of high-transparency optical elements with stronger microwave shielding that can be achieved using single-layer metallic mesh.

  6. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  7. Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices.

    PubMed

    Mondal, Praloy; Das, Debajyoti

    2016-07-27

    consequence of the increased carrier concentration. Highly conducting and transparent c-axis oriented ZnO:Ga:H films grown by a device compatible process at a low TS are extremely useful for various stacked layer thin film devices, including solar cells. PMID:27401012

  8. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    SciTech Connect

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min E-mail: limin.liu@csrc.ac.cn; Lau, Woon-Ming; Peng, Ping E-mail: limin.liu@csrc.ac.cn

    2014-02-07

    The family of bulk metal phosphorus trichalcogenides (APX{sub 3}, A = M{sup II}, M{sub 0.5}{sup I}M{sub 0.5}{sup III}; X = S, Se; M{sup I}, M{sup II}, and M{sup III} represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX{sub 3} should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe{sub 3}, CdPSe{sub 3}, Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3}, and Ag{sub 0.5}In{sub 0.5}PX{sub 3} (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3} is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting.

  9. One-Step Synthesis of MoS₂/WS₂ Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films.

    PubMed

    Woods, John M; Jung, Yeonwoong; Xie, Yujun; Liu, Wen; Liu, Yanhui; Wang, Hailiang; Cha, Judy J

    2016-02-23

    Transition metal dichalcogenides (TMDCs) are a promising class of two-dimensional (2D) materials for use in applications such as 2D electronics, optoelectronics, and catalysis. Due to the van der Waals (vdW) bonding between layers, vdW heterostructures can be constructed between two different species of TMDCs. Most studies employ exfoliation or co-vapor growth schemes, which are limited by the small size and uneven distribution of heterostructures on the growth substrate. In this work we demonstrate a one-step synthesis procedure for large-area vdW heterostructures between horizontal TMDCs MoS2 and WS2. The synthesis procedure is scalable and provides patterning ability, which is critical for electronic applications in integrated circuits. We demonstrate rectification characteristics of large-area MoS2/WS2 stacks. In addition, hydrogen evolution reaction performance was measured in these horizontal MoS2 and WS2 thin films, which indicate that, in addition to the catalytically active sulfur edge sites, defect sites may serve as catalyst sites. PMID:26836122

  10. Effects of Cu/In compositional ratio on the characteristics of CuInS2 absorber layers prepared by sulfurization of metallic precursors

    NASA Astrophysics Data System (ADS)

    Lee, Seung Hwan; Shin, Seung Wook; Han, Jun Hee; Lee, Jeong Yong; Kang, Myeong Gil; Agawane, G. L.; Yun, Jae Ho; Moon, Jong Ha; Kim, Jin Hyeok

    2012-04-01

    This paper investigates the effects of the Cu/In compositional ratio on morphological, structural and optical properties of CuInS2 (CIS) absorber layers formed by sulfurization of In/Cu stacked precursors. In/Cu stacked precursors were prepared on Mo-coated soda-lime glass substrates by DC magnetron sputtering method. The Cu/In compositional ratio in the precursor thin film was varied from 0.55 to 1.44. The as-deposited stacked precursor thin films were sulfurized using a tubular furnace annealing system in a mixture of N2 (95%) + H2S (5%) atmosphere at 450°C for 1 hour. X-ray diffraction patterns and Raman spectra results showed that the sulfurized thin films contained both tetragonal CIS and a Cu-based secondary phase, except for the film with a Cu/In compositional ratio of 0.55. Field emission-scanning electron microscopy study showed that the microstructure of the sulfurized CIS thin films became denser with increasing Cu/In compositional ratio. Optical properties of the CIS thin films showed that all the CIS thin films had a good absorption coefficient over 104 cm-1 in the visible region. The direct band gap energy of the sulfurized CIS thin films decreased from 1.39 eV to 1.08 eV with increasing Cu/In compositional ratio. These results demonstrated the effect of the Cu/In compositional ratio on the properties of the CIS thin films and the consequent importance of precisely controlling the metal ratio in the precursor film in order to control the properties of absorber layers in thin film solar cells.

  11. Simple metal under tensile stress: layer-dependent herringbone reconstruction of thin potassium films on graphite

    NASA Astrophysics Data System (ADS)

    Yin, Feng; Kulju, Sampo; Koskinen, Pekka; Akola, Jaakko; Palmer, Richard E.

    2015-05-01

    While understanding the properties of materials under stress is fundamentally important, designing experiments to probe the effects of large tensile stress is difficult. Here tensile stress is created in thin films of potassium (up to 4 atomic layers) by epitaxial growth on a rigid support, graphite. We find that this “simple” metal shows a long-range, periodic “herringbone” reconstruction, observed in 2- and 3- (but not 1- and 4-) layer films by low-temperature scanning tunneling microscopy (STM). Such a pattern has never been observed in a simple metal. Density functional theory (DFT)simulations indicate that the reconstruction consists of self-aligned stripes of enhanced atom density formed to relieve the tensile strain. At the same time marked layer-dependent charging effects lead to substantial variation in the apparent STM layer heights.

  12. Simple metal under tensile stress: layer-dependent herringbone reconstruction of thin potassium films on graphite

    PubMed Central

    Yin, Feng; Kulju, Sampo; Koskinen, Pekka; Akola, Jaakko; Palmer, Richard E.

    2015-01-01

    While understanding the properties of materials under stress is fundamentally important, designing experiments to probe the effects of large tensile stress is difficult. Here tensile stress is created in thin films of potassium (up to 4 atomic layers) by epitaxial growth on a rigid support, graphite. We find that this “simple” metal shows a long-range, periodic “herringbone” reconstruction, observed in 2- and 3- (but not 1- and 4-) layer films by low-temperature scanning tunneling microscopy (STM). Such a pattern has never been observed in a simple metal. Density functional theory (DFT)simulations indicate that the reconstruction consists of self-aligned stripes of enhanced atom density formed to relieve the tensile strain. At the same time marked layer-dependent charging effects lead to substantial variation in the apparent STM layer heights. PMID:25959681

  13. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

    PubMed Central

    Trost, S.; Becker, T.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Heiderhoff, R.; Görrn, P.; Riedl, T.

    2015-01-01

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1–20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated. PMID:25592174

  14. Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

    PubMed

    Yan, Kai; Lee, Hyun-Wook; Gao, Teng; Zheng, Guangyuan; Yao, Hongbin; Wang, Haotian; Lu, Zhenda; Zhou, Yu; Liang, Zheng; Liu, Zhongfan; Chu, Steven; Cui, Yi

    2014-10-01

    Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte. PMID:25166749

  15. FTIR spectroscopy structural analysis of the interaction between Lactobacillus kefir S-layers and metal ions

    NASA Astrophysics Data System (ADS)

    Gerbino, E.; Mobili, P.; Tymczyszyn, E.; Fausto, R.; Gómez-Zavaglia, A.

    2011-02-01

    FTIR spectroscopy was used to structurally characterize the interaction of S-layer proteins extracted from two strains of Lactobacillus kefir (the aggregating CIDCA 8348 and the non-aggregating JCM 5818) with metal ions (Cd +2, Zn +2, Pb +2 and Ni +2). The infrared spectra indicate that the metal/protein interaction occurs mainly through the carboxylate groups of the side chains of Asp and Glut residues, with some contribution of the NH groups belonging to the peptide backbone. The frequency separation between the νCOO - anti-symmetric and symmetric stretching vibrations in the spectra of the S-layers in presence of the metal ions was found to be ca. 190 cm -1 for S-layer CIDCA 8348 and ca. 170 cm -1 for JCM 5818, denoting an unidentate coordination in both cases. Changes in the secondary structures of the S-layers induced by the interaction with the metal ions were also noticed: a general trend to increase the amount of β-sheet structures and to reduce the amount of α-helices was observed. These changes allow the proteins to adjust their structure to the presence of the metal ions at minimum energy expense, and accordingly, these adjustments were found to be more important for the bigger ions.

  16. Next-Generation Lithium Metal Anode Engineering via Atomic Layer Deposition.

    PubMed

    Kozen, Alexander C; Lin, Chuan-Fu; Pearse, Alexander J; Schroeder, Marshall A; Han, Xiaogang; Hu, Liangbing; Lee, Sang-Bok; Rubloff, Gary W; Noked, Malachi

    2015-06-23

    Lithium metal is considered to be the most promising anode for next-generation batteries due to its high energy density of 3840 mAh g(-1). However, the extreme reactivity of the Li surface can induce parasitic reactions with solvents, contamination, and shuttled active species in the electrolyte, reducing the performance of batteries employing Li metal anodes. One promising solution to this issue is application of thin chemical protection layers to the Li metal surface. Using a custom-made ultrahigh vacuum integrated deposition and characterization system, we demonstrate atomic layer deposition (ALD) of protection layers directly on Li metal with exquisite thickness control. We demonstrate as a proof-of-concept that a 14 nm thick ALD Al2O3 layer can protect the Li surface from corrosion due to atmosphere, sulfur, and electrolyte exposure. Using Li-S battery cells as a test system, we demonstrate an improved capacity retention using ALD-protected anodes over cells assembled with bare Li metal anodes for up to 100 cycles. PMID:25970127

  17. Electrode dependent interfacial layer variation in metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Park, I.-S.; Jung, Y. C.; Lee, M.; Seong, S.; Ahn, J.

    2014-03-01

    The interfacial layer between oxide and semiconductor in metal-oxide-semiconductor (MOS) capacitors depends on the metal electrode material. The metal/HfO2/Si and metal/HfO2/Ge capacitor were made using an atomic layer deposited HfO2 dielectric films and Mo, Ru, and Pt electrodes above Si substrate and Ti, Ru, and Pt electrodes above Ge substrate. The measured saturation capacitance was varied with electrode and evaluated to capacitance equivalent thickness (CET). In Si-based MOS capacitor, the CET value of the capacitor with Pt electrode is larger than those with Mo and Ru electrode. In addition, the CET is 27.4 A, 38.2 A, and 30.8 A for Ti, Ru, and Pt electrode, respectively, for Ge-based MOS capacitors. The CET variation with electrode is attributed the variation of dielectric constant of HfO2 dielectric and the difference of interfacial layer. The CET variation is well in agreement with the interfacial layer thickness taken by a transmission electron microscopy. The thickness variation of interfacial layer results from the oxygen gettering ability of the electrode even though they are apart.

  18. Process for preparation of a seed layer for selective metal deposition

    DOEpatents

    Bernhardt, Anthony F.

    1992-01-01

    Disclosed is a process for selective metal deposition comprising of the steps of: a. formation of an initial surface on a substrate, said initial surface being comprised of at least two layers of which the uppermost is inert, b. exposing the surface to a source of heat in pre-determined places wherein surface activation is desired, and c. deposition of metal on activated portions of said surface.

  19. Resonant microwave transmission from a double layer of subwavelength metal square arrays: Evanescent handedness

    NASA Astrophysics Data System (ADS)

    Butler, C. A. M.; Hobson, P. A.; Hibbins, A. P.; Sambles, J. R.

    2012-12-01

    A double layer of identical subwavelength metal patch arrays is experimentally shown to be electromagnetically chiral due to the evanescent coupling of the near fields between nonchiral layers—it exhibits “evanescent handedness.” Despite each layer being intrinsically isotropic in the plane with four mirror planes orthogonal to the plane of the structure, circular dichroism, leading to significant polarization rotation, is found in the resonant microwave transmission for any incident linear polarization.

  20. Synthesis and stabilization of supported metal catalysts by atomic layer deposition.

    PubMed

    Lu, Junling; Elam, Jeffrey W; Stair, Peter C

    2013-08-20

    Supported metal nanoparticles are among the most important catalysts for many practical reactions, including petroleum refining, automobile exhaust treatment, and Fischer-Tropsch synthesis. The catalytic performance strongly depends on the size, composition, and structure of the metal nanoparticles, as well as the underlying support. Scientists have used conventional synthesis methods including impregnation, ion exchange, and deposition-precipitation to control and tune these factors, to establish structure-performance relationships, and to develop better catalysts. Meanwhile, chemists have improved the stability of metal nanoparticles against sintering by the application of protective layers, such as polymers and oxides that encapsulate the metal particle. This often leads to decreased catalytic activity due to a lack of precise control over the thickness of the protective layer. A promising method of catalyst synthesis is atomic layer deposition (ALD). ALD is a variation on chemical vapor deposition in which metals, oxides, and other materials are deposited on surfaces by a sequence of self-limiting reactions. The self-limiting character of these reactions makes it possible to achieve uniform deposits on high-surface-area porous solids. Therefore, design and synthesis of advanced catalysts on the nanoscale becomes possible through precise control over the structure and composition of the underlying support, the catalytic active sites, and the protective layer. In this Account, we describe our advances in the synthesis and stabilization of supported metal catalysts by ALD. After a short introduction to the technique of ALD, we show several strategies for metal catalyst synthesis by ALD that take advantage of its self-limiting feature. Monometallic and bimetallic catalysts with precise control over the metal particle size, composition, and structure were achieved by combining ALD sequences, surface treatments, and deposition temperature control. Next, we describe

  1. Excitation transfer in stacked quantum dot chains

    NASA Astrophysics Data System (ADS)

    Kanjanachuchai, Songphol; Xu, Ming; Jaffré, Alexandre; Jittrong, Apichart; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed

    2015-05-01

    Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP) templates yield a rich emission spectrum with an unusual carrier transfer characteristic compared to conventional quantum dot (QD) stacks. The photoluminescent spectra of the controlled, single QDC layer comprise multiple peaks from the orthogonal QDCs, the free-standing QDs, the CHP, the wetting layers and the GaAs substrate. When the QDC layers are stacked, employing a 10 nm GaAs spacer between adjacent QDC layers, the PL spectra are dominated by the top-most stack, indicating that the QDC layers are nominally uncoupled. Under high excitation power densities when the high-energy peaks of the top stack are saturated, however, low-energy PL peaks from the bottom stacks emerge as a result of carrier transfers across the GaAs spacers. These unique PL signatures contrast with the state-filling effects in conventional, coupled QD stacks and serve as a means to quickly assess the presence of electronic coupling in stacks of dissimilar-sized nanostructures.

  2. APCVD Transition Metal Oxides - Functional Layers in "Smart windows"

    NASA Astrophysics Data System (ADS)

    Gesheva, K. A.; Ivanova, T. M.; Bodurov, G. K.

    2014-11-01

    Transition metal oxides (TMO) exhibit electrochromic effect. Under a small voltage they change their optical transmittance from transparent to collored (absorbing) state. The individual material can manifest its electrochromic properties only when it is part of electrochromic (EC) multilayer system. Smart window is controlling the energy of solar flux entering the building or car and makes the interiors comfortable and energy utilization more effective. Recently the efforts of material researchers in this field are directed to price decreasing. APCVD technology is considered as promissing as this process permits flowthrough large-scale production process. The paper presents results on device optimization based on WO3-MoO3 working electrode. Extensive research reveals that WO3-MoO3 structure combines positive features of single oxides: excellent electrochromic performance of WO3 and better kinetic properties of MoO3 deposition. The achieved color efficiency of APCVD WO3-MoO3 films is 200cm2/C and optical modulation of 65-70% are practically favorable electrochromic characteristics. To respond to low cost requirement, the expensive hexacarbonyl can be replaced with acetylacetonate. We have started with this precursor to fabricate mixed WxV1-xO3 films. The films possess excellent surface coverage and high growth-rate. CVD deposition of VO2, a promissing thermochromic thin film material is also presented.

  3. Surface Phonon Dispersion of the Layered Transition-metal Oxides

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Ismail; Matzdorf, R.; Plummer, E. W.; Kimura, T.; Tokura, Y.

    2000-03-01

    Transition-metal oxides exhibit strong coupling between the charge and spin of the electrons and the lattice. Creating a surface by cleaving a single crystal breaks the symmetry of the lattice and disturbs the correlated system without changing the stoichiometry, providing the opportunity to study the response of electronic, structural, and magnetic properties. We have utilized electron-energy loss sprectroscopy (EELS) to study the electronic and lattice excitations of the Sr_2RuO4 and La_0.5Sr_1.5MnO4 surfaces. For both of these materials there are many more than three modes; three dominate surface optical phonons with small dispersion and with higher energies compared to those in the bulk materials. However, these phonons show completely different temperature dependence for different samples. The surface phonons become soft for Sr_2RuO4 while they become stiff for La_0.5Sr_1.5MnO4 with increasing temparature. The change of phonon energy of La_0.5Sr_1.5MnO4 with temperature is also in opposite direction to that of (La, Ca)MnO_4( Zhang et al., Surf. Sci. 393, 64(1997) * LMER Corp. for U.S. DOE under contract No. DE-AC05-96OR22464). These behaviors will be discussed in terms of the electronic, magnetic, and structural properties.

  4. Charge Transfer Stabilization of Late Transition Metal Oxide Nanoparticles on a Layered Niobate Support.

    PubMed

    Strayer, Megan E; Senftle, Thomas P; Winterstein, Jonathan P; Vargas-Barbosa, Nella M; Sharma, Renu; Rioux, Robert M; Janik, Michael J; Mallouk, Thomas E

    2015-12-30

    Interfacial interactions between late transition metal/metal oxide nanoparticles and oxide supports impact catalytic activity and stability. Here, we report the use of isothermal titration calorimetry (ITC), electron microscopy and density functional theory (DFT) to explore periodic trends in the heats of nanoparticle-support interactions for late transition metal and metal oxide nanoparticles on layered niobate and silicate supports. Data for Co(OH)2, hydroxyiridate-capped IrOx·nH2O, Ni(OH)2, CuO, and Ag2O nanoparticles were added to previously reported data for Rh(OH)3 grown on nanosheets of TBA0.24H0.76Ca2Nb3O10 and a layered silicate. ITC measurements showed stronger bonding energies in the order Ag < Cu ≈ Ni ≈ Co < Rh < Ir on the niobate support, as expected from trends in M-O bond energies. Nanoparticles with exothermic heats of interaction were stabilized against sintering. In contrast, ITC measurements showed endothermic interactions of Cu, Ni, and Rh oxide/hydroxide nanoparticles with the silicate and poor resistance to sintering. These trends in interfacial energies were corroborated by DFT calculations using single-atom and four-atom cluster models of metal/metal oxide nanoparticles. Density of states and charge density difference calculations reveal that strongly bonded metals (Rh, Ir) transfer d-electron density from the adsorbed cluster to niobium atoms in the support; this mixing is absent in weakly binding metals, such as Ag and Au, and in all metals on the layered silicate support. The large differences between the behavior of nanoparticles on niobate and silicate supports highlight the importance of d-orbital interactions between the nanoparticle and support in controlling the nanoparticles' stability. PMID:26651875

  5. Active diagenetic formation of metal-rich layers in N. E. Atlantic sediments

    NASA Astrophysics Data System (ADS)

    Wallace, H. E.; Thomson, J.; Wilson, T. R. S.; Weaver, P. P. E.; Higgs, N. C.; Hydes, D. J.

    1988-06-01

    Sediment cores from the Porcupine Abyssal Plain exhibit an indurated layer 0.5-3 cm thick at depths of approximately 50 cm. This is some 15-20 cm below the glacial/Holocene transition as interpreted by radiocarbon dating and the palaeontological criteria of RUDDIMAN and MCINTYRE (1981). The layer is forming currently at the oxic/post-oxic boundary in the sediments, as revealed by pore water data: O 2 and NO -3 are present in solution above the layer, while Fe 2+, Mn 2+, PO 3-4 and NH +4 are present in solution below, and all these species show concentration gradients indicating fluxes into the layer. These data are consistent with the hypothesis for the initiation and sustained formation of such layers proposed by WILSONet al. (1986a,b). The elements Mn, Ni, Co, Fe, P, V, Cu, Zn and U are all enriched to varying degrees in the vicinity of the layer. Some differential stratification of these elements in the vertical, consistent with a redox control, is observed at one site with a 0.5 cm layer, with Mn, Ni and Co above, Fe, P, V and Cu in the layer, and U below. At another site the metal-rich layer has higher Fe and P concentrations and is more indurated. Here all enrichments except Co are contained within a single layer sample, 3 cm thick.

  6. Corrosion protected, multi-layer fuel cell interface

    DOEpatents

    Feigenbaum, Haim; Pudick, Sheldon; Wang, Chiu L.

    1986-01-01

    An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

  7. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    DOE PAGESBeta

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; Xie, Yu; Voigt, Cooper A.; Kent, Paul R. C.; May, Steven J.; Billinge, Simon J. L.; Barsoum, Michel W.; Gogotsi, Yury

    2016-02-24

    In this paper, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M'2M"C2 and M'2M"2C3 – where M' and M" are two different early transition metals, such as Mo, Cr, Ta, Nb, V, andmore » Ti. The M' atoms only occupy the outer layers and the M" atoms fill the middle layers. In other words, M' atomic layers sandwich the middle M"–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. Finally, this finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.« less

  8. Electrical and materials characterization of tungsten-titanium diffusion barrier layers and alloyed silver metallization

    NASA Astrophysics Data System (ADS)

    Bhagat, Shekhar Kumar

    With the constant miniaturization of semiconductor devices, research is always ongoing to obtain the best materials and/or materials systems which fulfill all the requirements of an ideal interconnect. Silver (Ag) and silver based alloys are front runners among other metals and alloys being investigated. Ag has a low electrical resistivity (1.59 micro-ohm-centimeters for bulk), very high thermal conductivity (4.25 Watt per centimeters per Kelvin), and has better electromigration resistance than aluminum (Al). In the pure form, however, it has several drawbacks (e.g., a tendency to diffuse in silicon substrate at higher temperatures, inadequate adhesion to silicon dioxide, poor corrosion resistance, and agglomeration at higher temperatures). These drawbacks can be circumvented by the addition of diffusion barrier layers and/or alloying in silver. The present study investigates both routes to make silver a legitimate interconnect material. Initially this study focuses on thermal stability and behavior of tungsten-titanium (W-Ti) barrier layers for Ag metallization. It is shown that Ag thin films are thermally stable up to 650 degrees centigrade with the presence of W-Ti under layers. The effect of a W-Ti layer on the {111} texture formation in Ag thin film is also evaluated in detail. Insertion of a thin W-Ti over layer on Ag thin films is investigated with respect to their thermal stability. This research also evaluates the diffusion of Ag into silicon dioxide and W-Ti barriers. This project shows that W-Ti is an effective barrier layer for silver metallization. Later, the study investigates the effect of Cu addition in silver metallization and its impact on electromigration resistance. It is shown that Cu addition enhances the electromigration lifetime for silver metallization.

  9. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    NASA Astrophysics Data System (ADS)

    Grym, Jan; Yatskiv, Roman

    2013-04-01

    Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.

  10. Solvent-free synthesis of new metal phosphites with double-layered, pillared-layered, and framework structures

    NASA Astrophysics Data System (ADS)

    Liu, Lin; Zhang, Wei; Shi, Zhonghua; Chen, Yaoqiang; Lin, Zhien

    2014-12-01

    Three new metal phosphites, formulated as (H3O)2·Mn2(HPO3)3 (1), Co(bpy) (H2O) (HPO3) (2), and H2tmpda·Zn3(HPO3)4 (3), have been synthesized under solvent-free conditions, where bpy = 4,4‧-bipyridine, and tmpda = N,N,N‧,N‧-tetramethyl-1,3-propanediamine. Compound 1 has a double-layered structure with a thickness of 5.68 Å. Compound 2 has an inorganic-organic hybrid framework with cobalt phosphite layers pillared by bpy ligands. Compound 3 has a three-dimensional open-framework structure containing 8-ring channels. The temperature dependence of the magnetic susceptibility of compounds 1 and 2 were also investigated.

  11. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and method of making same

    SciTech Connect

    Syn, C.K.; Lesuer, D.R.

    1994-12-31

    This invention relates to a laminated metal composite, comprising alternating layers of low flow stress material and high flow stress material, and formed using flow constraining elements around each low flow stress layer; and a method of making same. A composite is a combination of at least two chemically distinct materials with a distinct interface separating the two materials. A metal matrix composite (MMC) is a composite material composed of a metal and a nonmetallic reinforcing agent such as silicon carbide (SiC) or graphite in continuous or discontinuous fiber, whisker, or discrete particulate form. A laminate is a material composed of several bonded layers. It is possible to have a laminate composed of multi-layers of a single type of material bonded to each other. However, such a laminate would not be considered to be a composite. The term {open_quotes}laminated metal composite{close_quotes} (LMC), as used herein, is intended to include a structural material composed of: (1) layers of metal or metal alloys interleaved with (2) a different metal, a metal alloy, or a metal matrix composite (MMC) containing strengthening agents.

  12. Characteristics of Spontaneous Emission of Polarized Atoms in Metal Dielectric Multiple Layer Structures

    NASA Astrophysics Data System (ADS)

    Zhao, Li-Ming; Gu, Ben-Yuan; Zhou, Yun-Song

    2007-11-01

    The spontaneous emission (SE) progress of polarized atoms in a stratified structure of air-dielectric(D0)-metal(M)-dielectric(D1)-air can be controlled effectively by changing the thickness of the D1 layer and rotating the polarized direction of atoms. It is found that the normalized SE rate of atoms located inside the D0 layer crucially depends on the atomic position and the thickness of the D1 layer. When the atom is located near the D0-M interface, the normalized atomic SE rate as a function of the atomic position is abruptly onset for the thin D1 layer. However, with the increasing thickness of the D1 layer, the corresponding curve profile exhibits plateau and stays nearly unchanged. The substantial change of the SE rate stems from the excitation of the surface plasmon polaritons in metal-dielectric interface, and the feature crucially depends on the thickness of D1 layer. If atoms are positioned near the D0-air interface, the substantial variation of the normalized SE rate appears when rotating the polarized direction of atoms. These findings manifest that the atomic SE processes can be flexibly controlled by altering the thickness of the dielectric layer D1 or rotating the orientation of the polarization of atoms.

  13. Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

    NASA Astrophysics Data System (ADS)

    Ng, A.; Liu, X.; Sun, Y. C.; Djurišić, A. B.; Ng, A. M. C.; Chan, W. K.

    2013-12-01

    We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO2) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO2/P3HT:PCBM/V2O5/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V2O5/P3HT:PCBM/ZnO or TiO2/Al). The results are shown in detail.

  14. Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

    SciTech Connect

    Ng, A.; Liu, X.; Sun, Y. C.; Djurišić, A. B.; Ng, A. M. C.; Chan, W. K.

    2013-12-04

    We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.

  15. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

    SciTech Connect

    Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

    2014-08-18

    In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

  16. Lightweight Stacks of Direct Methanol Fuel Cells

    NASA Technical Reports Server (NTRS)

    Narayanan, Sekharipuram; Valdez, Thomas

    2004-01-01

    An improved design concept for direct methanol fuel cells makes it possible to construct fuel-cell stacks that can weigh as little as one-third as much as do conventional bipolar fuel-cell stacks of equal power. The structural-support components of the improved cells and stacks can be made of relatively inexpensive plastics. Moreover, in comparison with conventional bipolar fuel-cell stacks, the improved fuel-cell stacks can be assembled, disassembled, and diagnosed for malfunctions more easily. These improvements are expected to bring portable direct methanol fuel cells and stacks closer to commercialization. In a conventional bipolar fuel-cell stack, the cells are interspersed with bipolar plates (also called biplates), which are structural components that serve to interconnect the cells and distribute the reactants (methanol and air). The cells and biplates are sandwiched between metal end plates. Usually, the stack is held together under pressure by tie rods that clamp the end plates. The bipolar stack configuration offers the advantage of very low internal electrical resistance. However, when the power output of a stack is only a few watts, the very low internal resistance of a bipolar stack is not absolutely necessary for keeping the internal power loss acceptably low.

  17. Electric-field noise above a thin dielectric layer on metal electrodes

    NASA Astrophysics Data System (ADS)

    Kumph, Muir; Henkel, Carsten; Rabl, Peter; Brownnutt, Michael; Blatt, Rainer

    2016-02-01

    The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electric-field noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.

  18. Metallic conduction induced by direct anion site doping in layered SnSe2

    NASA Astrophysics Data System (ADS)

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-Taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm-3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm-1 from ~1.7 S·cm-1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm-3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2.

  19. A fluorescent, photochromic and thermochromic trifunctional material based on a layered metal-viologen complex.

    PubMed

    Wan, Fang; Qiu, Li-Xia; Zhou, Liang-Liang; Sun, Yan-Qiong; You, Yi

    2015-11-14

    The azide anion as an energy acceptor and an electron donor has been introduced into a metal-viologen compound to form a 2D layered viologen-based trifunctional material, which exhibits the rare discolored function of reversible photochromism and thermochromism. Interestingly, its fluorescence can be switched by visible light irradiation and heating in air. PMID:26445888

  20. Metallic conduction induced by direct anion site doping in layered SnSe2.

    PubMed

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~10(20) cm(-3) is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S · cm(-1) from ~1.7 S · cm(-1) for non-doped SnSe2. When the carrier concentration exceeds ~10(19) cm(-3), the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  1. Metallic conduction induced by direct anion site doping in layered SnSe2

    PubMed Central

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm−3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm−1 from ~1.7 S·cm−1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm−3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  2. Elasto-plastic analysis of interface layers for fiber reinforced metal matrix composites

    NASA Technical Reports Server (NTRS)

    Doghri, I.; Leckie, F. A.

    1991-01-01

    The mismatch in coefficients of thermal expansion (CTE) of fiber and matrix in metal matrix composites reinforced with ceramic fibers induces high thermal stresses in the matrix. Elasto-plastic analyses - with different degrees of simplification and modelization - show that an interface layer with a sufficiently high CTE can reduce the tensile hoop stress in the matrix substantially.

  3. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  4. Metal to Insulator Quantum-Phase Transition in Few-Layered ReS₂.

    PubMed

    Pradhan, Nihar R; McCreary, Amber; Rhodes, Daniel; Lu, Zhengguang; Feng, Simin; Manousakis, Efstratios; Smirnov, Dmitry; Namburu, Raju; Dubey, Madan; Walker, Angela R Hight; Terrones, Humberto; Terrones, Mauricio; Dobrosavljevic, Vladimir; Balicas, Luis

    2015-12-01

    In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T'-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μ(i) ∼ 30 cm(2)/(V s) at T = 300 K, which increases up to ∼350 cm(2)/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T(2)-dependence. This suggests that the band structure of 1T'-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides. PMID:26599563

  5. Large area nanoscale metal meshes for use as transparent conductive layers

    NASA Astrophysics Data System (ADS)

    Jin, Yuanhao; Li, Qunqing; Chen, Mo; Li, Guanhong; Zhao, Yudan; Xiao, Xiaoyang; Wang, Jiaping; Jiang, Kaili; Fan, Shoushan

    2015-10-01

    We report on the experimental realization of using super-aligned carbon nanotubes (SACNTs) as etching masks for the fabrication of large area nanoscale metal meshes. This method can easily be extended to different metals on both rigid and flexible substrates. The as-fabricated metal meshes, including the ones made of gold, copper, and aluminum, are suitable for use as transparent conductive layers (TCLs). The metal meshes, which are similar to the SACNT networks in their dimensional features of tens of nanometers, exhibit compatible performance in terms of optical transmittance and sheet resistance. Moreover, because the metal meshes are fabricated as an integrated material, there is no junction resistance between the interconnected metal nanostructures, which markedly lowers their sheet resistance at high temperatures. The fabrication of such an effective etching mask involves a simple drawing process of the SACNT networks prepared and a common deposition process. This approach should be easy to extend to various research fields and has broad prospects in commercial applications.We report on the experimental realization of using super-aligned carbon nanotubes (SACNTs) as etching masks for the fabrication of large area nanoscale metal meshes. This method can easily be extended to different metals on both rigid and flexible substrates. The as-fabricated metal meshes, including the ones made of gold, copper, and aluminum, are suitable for use as transparent conductive layers (TCLs). The metal meshes, which are similar to the SACNT networks in their dimensional features of tens of nanometers, exhibit compatible performance in terms of optical transmittance and sheet resistance. Moreover, because the metal meshes are fabricated as an integrated material, there is no junction resistance between the interconnected metal nanostructures, which markedly lowers their sheet resistance at high temperatures. The fabrication of such an effective etching mask involves a simple

  6. Growth mechanism of pulsed laser fabricated few-layer MoS₂ on metal substrates.

    PubMed

    Loh, Tamie A J; Chua, Daniel H C

    2014-09-24

    Pulsed laser deposition (PLD) on metal substrates has recently been discovered to present an alternative method for producing highly crystalline few-layer MoS2. However, not every metal behaves in the same manner during film growth, and hence, it is crucial that the ability of various metals to produce crystalline MoS2 be thoroughly investigated. In this work, MoS2 was deposited on metal substrates, Al, Ag, Ni, and Cu, using a pulsed laser. Highly crystalline few-layer MoS2 was successfully grown on Ag, but is absent in Al, Ni, and Cu under specific growth conditions. This discrepancy was attributed to either excessively strong or insufficient adlayer-substrate interactions. In the case of Al, the effects of the strong interface interactions can be offset by increasing the amount of source atoms supplied, thereby producing semicrystalline few-layer MoS2. The results show that despite PLD being a physical vapor deposition technique, both physical and chemical processes play an important role in MoS2 growth on metal substrates. PMID:25203278

  7. Heat-resistant organic molecular layer as a joint interface for metal reduction on plastics surfaces

    NASA Astrophysics Data System (ADS)

    Sang, Jing; Aisawa, Sumio; Hirahara, Hidetoshi; Kudo, Takahiro; Mori, Kunio

    2016-04-01

    Heat-resistant organic molecular layers have been fabricated by triazine-based silane coupling agent for metal reduction on plastic surfaces using adsorption method. These molecular layers were used as an interfacial layer between polyamide (PA6) and metal solution to reduce Ag+ ion to Ag0. The interfacial behaviors of triazine molecular layer at the interfaces between PA6 and Ag solution were investigated using quartz crystal microbalance (QCM). The kinetics of molecular adsorption on PA6 was investigated by using triazine-based silane coupling agent solutions at different pH and concentration. X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and local nano thermal analysis were employed to characterize the surfaces and interfaces. The nano thermal analysis results show that molecular layers of triazine-based silane coupling agent greatly improved heat resistance of PA6 resin from 170 °C up to 230 °C. This research developed an in-depth insight for molecular behaviors of triazine-based silane coupling agent at the PA6 and Ag solution interfaces and should be of significant value for interfacial research between plastics and metal solution in plating industry.

  8. Thermal properties of a pyroelectric-ceramic infrared detector with metallic intermediate layer

    NASA Astrophysics Data System (ADS)

    Lee, Moon H.; Bae, Seong H.; Bhalla, Amar S.

    1998-06-01

    Infrared thermal detectors were prepared with pyroelectric PSN-PT-PZ (1/47/52) ceramics, where a signal electrode had a structure Au/metallic buffer/Pb(Zr,Ti)O3 ceramic. The effect of a metallic buffer layer on the voltage responsivity was investigated with a response to a step signal, made by a dynamic pyroelectric measurement. A pyroelectric ceramic wafer was prepared by a mixed-oxide technique. The Au layer (thickness 50 nm) and the metallic buffers (thickness 0 to 20 nm) of Cr, NiCr (80:20), and Ti were prepared by dc magnetron sputtering. In order to improve the light absorptivity, Au black was coated on the Au signal electrode by thermal evaporation. A detector without a buffer layer showed a noisy and fluctuating output signal. Among the three kinds of buffer materials, NiCr (80:20) and Ti adhered well with ceramics and showed good electrical and thermal contact, whereas Cr resulted in bad contacts. Considering the output voltage and thermal properties, the optimum thickness of the buffer layer was about 15 to 20 nm, and sensors with a Ti buffer 15 to 20 nm in thickness showed good detectivity. Thus, the stability and reliability of the infrared thermal sensors could be improved by using an appropriate buffer layer.

  9. Angle resolved XPS of monomolecular layer of 5-chlorobenzotriazole on oxidized metallic surface

    NASA Astrophysics Data System (ADS)

    Kazansky, L. P.; Selyaninov, I. A.; Kuznetsov, Yu. I.

    2012-10-01

    Angle resolved XPS is used to study adsorption of 5-chlorobenzotriazole (5-chloroBTAH) on surfaces of the oxidized metals: mild steel, copper and zinc from borate buffer solution (pH 7.4). It is shown that for the metals studied the 5-chloroBTA anions, when adsorbed, form a monomolecular layer whose thickness is ∼6 Å comparable with the size of BTA. As XPS evidences adsorption proceeds with deprotonation of 5-chloroBTAH and formation of the coordination bonds between the lone pair of nitrogens and cation of a metal. Measuring XPS at two different angles unequivocally points out almost vertical arrangement of the anions toward the sample surface, when chlorine atoms form outmost virtual layer.

  10. Studies of proximity-effect and tunneling in YBCO/metal layered films

    NASA Astrophysics Data System (ADS)

    Greene, L. H.; Barner, J. B.; Feldmann, W. L.; Farrow, L. A.; Miceli, P. F.; Ramesh, R.; Wilkens, B. J.; Bagley, B. G.; Tarascon, J. M.; Wernick, J. H.; Giroud, M.; Rowell, J. M.

    1989-12-01

    The short coherence length of the high-T c superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to “draw out” Cooper pairs. Our goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. Such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed.

  11. First-principles study of the noble metal-doped BN layer

    SciTech Connect

    Zhou, Yungang; Yang, Ping; Sun, Xin; Wang, Zhiguo; Zu, Xiaotao T.; Gao, Fei

    2011-04-18

    Intriguing electronic and magnetic properties of BN layer with noble metal (Pd, Pt, Ag and Au) doping are obtained by first-principles calculations. Adsorbed Pd (or Pt) reduces the band gap of BN sheet owing to the induction of impurity states. The unpaired electrons in the Ag (or Au)-adsorbed and the Pd (or Pt)-substituted BN layers are polarized, and thus exhibit a magnetic moment of 1.0 µB, leading to these BN configurations to be magnetic semiconductors. The half-metallic feature of the Ag-substituted BN layer, along with the delocalization of spin states, renders this configuration an excellent spin filter material. Thus, these findings offer a unique opportunity for developing BN-based nanoscale devices.

  12. Bilayer SnS2: Tunable stacking sequence by charging and loading pressure

    NASA Astrophysics Data System (ADS)

    Bacaksiz, C.; Cahangirov, S.; Rubio, A.; Senger, R. T.; Peeters, F. M.; Sahin, H.

    2016-03-01

    Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS2, which is a recently synthesized monolayer metal dichalcogenide. Comparison of the 1 H and 1 T phases of monolayer SnS2 confirms the ground state to be the 1 T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS2 is weaker than that of typical transition-metal dichalcogenides so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. A possible signature of the stacking order in the SnS2 bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS2. It is found that (i) the electric field increases the coupling between the layers at its preferred stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E field and under sufficient E field, the bilayer SnS2 can become a semimetal, (iii) the most favorable stacking order can be switched by charging, and (iv) a loading pressure exceeding 3 GPa changes the stacking order. The E-field tunable band gap and easily tunable stacking sequence of SnS2 layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.

  13. Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

    DOEpatents

    Wrenn, Jr., George E.; Holcombe, Jr., Cressie E.

    1988-01-01

    A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

  14. Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

    DOEpatents

    Wrenn, G.E. Jr.; Holcombe, C.E. Jr.

    1988-09-13

    A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

  15. Application of Al-Nb alloy film to metal capping layer on Cu

    NASA Astrophysics Data System (ADS)

    Takeyama, Mayumi B.; Noya, Atsushi

    2016-02-01

    An Al-Nb alloy film with the Al72Nb28 composition is applied as a candidate metal capping layer on Cu interconnects. In the Al72Nb28/Cu/SiO2/Si model system, the preferential oxidation of Al forming a thin surface Al2O3 layer occurs owing to oxidation in air for 1 h at temperatures up to ˜300 °C, resulting in the protection of the layers underneath from further oxidation, although a slight Cu intermixing into Al-Nb occurs. With increasing oxidation temperature up to 500 °C, the surface Al2O3 layer still grows by the preferential oxidation of Al and rejects Cu atoms from the surface oxidized layer. Although Nb atoms are left behind in the surface oxidized layer, they are in a metallic state owing to the high solubility of oxygen before forming an oxide. The extremely low solubility of Nb in Cu also protects Cu without excess intermixing. A good passivation characteristic of the Al72Nb28 alloy film on Cu is demonstrated.

  16. Impact of thin metal layer on the optical and electrical properties of indium-doped-tin oxide and aluminum-doped-zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Kumar, Melvin David; Park, Yun Chang; Kim, Joondong

    2015-06-01

    The distinguished transparent conductive oxide (TCO) layers like indium-doped-tin oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers were prepared in different combinations with and without thin Ni metal layer. The optical and electrical properties of prepared samples were analyzed and compared with the objective to understand the role and influence of the Ni layer in each TCO combination. The highest transmittance value of 91.49% was exhibited by prepared AZO layers. Even though if the transmittance of Ni inserting TCO layers was marginally reduced than that of the ordinary TCO samples, they exhibited balanced optical properties with enhanced electrical properties. Carrier concentration of indium doped tin-oxide and aluminum doped zinc oxide (ITO/AZO) bilayer sample is increased more than double the times when the Ni layer was inserted between ITO and AZO. Thin layer of Ni in between TCO layers reduced sheet resistance and offered substantial transmittance, so that the figure of merit (FOM) value of Ni embedding TCOs was greater than that of TCOs without Ni layer. The ITO/Ni/AZO combination provided optimum results in all the electrical properties. As compared to other TCO/metal combinations, the overall performance of ITO/Ni/AZO tri-layer combination was appreciable. These results show that the optical and electrical properties of TCO layers could be enhanced by inserting a Ni layer with optimum thickness in between them.

  17. Role of metallic substrate on the plasmon modes in double-layer graphene structures

    NASA Astrophysics Data System (ADS)

    Cruz, G. Gonzalez de la

    2015-07-01

    Novel heterostructures combining different layered materials offer new opportunities for applications and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, we have investigated the influence of the metallic-like substrate on the plasmon spectrum of a double layer graphene system and a structure consisting of conventional two-dimensional electron gas (2DEG) immersed in a semiconductor quantum well and a graphene sheet with an interlayer separation of d. Long-range Coulomb interactions between substrate and graphene layered systems lead a new set of spectrum plasmons. At long wavelengths (q→0) the acoustic modes (ω~q) depend, besides on the carrier density in each layer, on the distance between the first carrier layer and the substrate in both structures. Furthermore, in the relativistic/nonrelativistic layered structure an undamped acoustic mode emerges for a certain interlayer critical distance dc. On the other hand, the optical plasmon modes emerging from the coupling of the double-layer systems and the substrate, both start at finite frequency at q=0 in contrast to the collective excitation spectrum ω~q1/2 reported in the literature for double-layer graphene structures.

  18. Highly sensitive multi-layer pressure sensor with an active nanostructured layer of an organic molecular metal

    NASA Astrophysics Data System (ADS)

    Laukhin, V.; Lebedev, V.; Laukhina, E.; Rovira, C.; Veciana, J.

    2016-03-01

    This work addresses to the modern technologies that need to be instrumented with lightweight highly sensitive pressure sensors. The paper presents the development of a new plain flexible thin pressure sensor using a nanostructured layer of the highly sensitive organic piezoresistive metal β-(BEDT-TTF)2I3 as an active component; BEDT-TTF=bis (ethylenedithio)tetrathiafulvalene. The original construction approach permits one to operate the developed sensor on the principle of electrical resistance variations when its piezoresistive layer is elongated under a pressure increase. The pressure sensing element and a set of gold electrodes were integrated into one compact multi-layer design. The construction was optimized to enable one generic design for pressure ranges from 1 to 400 bar. The pressure tests showed that the sensor is able to control a small pressure change as a well definite electrical signal. So the developed type of the sensors is very attractive as a new generation of compact, lightweight, low-cost sensors that might monitor pressure with a good level of measurement accuracy.

  19. Electrochemical cell stack assembly

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2010-06-22

    Multiple stacks of tubular electrochemical cells having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films arranged in parallel on stamped conductive interconnect sheets or ferrules. The stack allows one or more electrochemical cell to malfunction without disabling the entire stack. Stack efficiency is enhanced through simplified gas manifolding, gas recycling, reduced operating temperature and improved heat distribution.

  20. Rapid self-start of polymer electrolyte fuel cell stacks from subfreezing temperatures

    NASA Astrophysics Data System (ADS)

    Ahluwalia, R. K.; Wang, X.

    Polymer electrolyte fuel cell (PEFC) systems for light-duty vehicles must be able to start unassisted and rapidly from temperatures below -20 °C. Managing buildup of ice within the porous cathode catalyst and electrode structure is the key to self-starting a PEFC stack from subfreezing temperatures. The stack temperature must be raised above the melting point of ice before the ice completely covers the cathode catalyst and shuts down the electrochemical reaction. For rapid and robust self-start it is desirable to operate the stack near the short-circuit conditions. This mode of operation maximizes hydrogen utilization, favors production of waste heat that is absorbed by the stack, and delays complete loss of effective electrochemical surface area by causing a large fraction of the ice to form in the gas diffusion layer rather than in the cathode catalyst layer. Preheating the feed gases, using the power generated to electrically heat the stack, and operating pressures have only small effect on the ability to self-start or the startup time. In subfreezing weather, the stack shut-down protocol should include flowing ambient air through the hot cathode passages to vaporize liquid water remaining in the cathode catalyst. Self-start is faster and more robust if the bipolar plates are made from metal rather than graphite.

  1. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  2. Exchange coupling in metallic multilayers with a top FeRh layer

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Tanikawa, K.; Hirayama, J.; Kanashima, T.; Taniyama, T.; Hamaya, K.

    2016-05-01

    We study magnetic properties of metallic multilayers with FeRh/ferromagnet interfaces grown by low-temperature molecular beam epitaxy. Room-temperature coercivity of the ferromagnetic layers is significantly enhanced after the growth of FeRh, proving the existence of the exchange coupling between the antiferromagnetic FeRh layer and the ferromagnetic layer. However, exchange bias is not clearly observed probably due to the presence of disordered structures, which result from the lattice strain at the FeRh/ferromagnet interfaces due to the lattice mismatch. We infer that the lattice matched interface between FeRh and ferromagnetic layers is a key parameter for controlling magnetic switching fields in such multilayer systems.

  3. Predictive double-layer modeling of metal sorption in mine-drainage systems

    SciTech Connect

    Smith, K.S.; Plumlee, G.S.; Ranville, J.F.; Macalady, D.L.

    1996-10-01

    Previous comparison of predictive double-layer modeling and empirically derived metal-partitioning data has validated the use of the double-layer model to predict metal sorption reactions in iron-rich mine-drainage systems. The double-layer model subsequently has been used to model data collected from several mine-drainage sites in Colorado with diverse geochemistry and geology. This work demonstrates that metal partitioning between dissolved and sediment phases can be predictively modeled simply by knowing the water chemistry and the amount of suspended iron-rich particulates present in the system. Sorption on such iron-rich suspended sediments appears to control metal and arsenic partitioning between dissolved and sediment phases, with sorption on bed sediment playing a limited role. At pH > 5, Pb and As are largely sorbed by iron-rich suspended sediments and Cu is partially sorbed; Zn, Cd, and Ni usually remain dissolved throughout the pH range of 3 to 8.

  4. Lidar observations of Ca and K metallic layers from Arecibo and comparison with micrometeor sporadic activity

    NASA Astrophysics Data System (ADS)

    Raizada, S.; Tepley, C. A.; Janches, D.; Friedman, J. S.; Zhou, Q.; Mathews, J. D.

    2004-04-01

    We report on the first simultaneous observations of Ca and K metallic layers using the low-latitude lidar systems located at the Arecibo Observatory in Puerto Rico (18.35°N, 66.75°W). We often observe sudden increases in both Ca and K densities during early morning hours on nights where meteor showers take place. During these periods, the Ca/K abundance ratio varied between 2 and 3. On occasion, differences were observed in Ca and K layers, which relate to differences in the chemistry of the two metals. It is known that metallic layers display distinct seasonal variations, but chemistry alone cannot explain the measured differences. Thus, we examined whether or not the seasonal distribution of micrometeoroids, derived from meteor observations using the Arecibo 430MHz radar, can account for the dissimilar metallic observations. We found that the deposition flux of micrometeoroids, with particle sizes ranging between 0.5 and 100μm, increased by a factor of two during the summer as compared with the winter, suggesting a seasonal variation of their sporadic activity. In addition, our data support the idea that differential ablation leads to a depletion of Ca atoms in the mesosphere.

  5. Exclusion of metal oxide by an RF sputtered Ti layer in flexible perovskite solar cells: energetic interface between a Ti layer and an organic charge transporting layer.

    PubMed

    Ameen, Sadia; Akhtar, M Shaheer; Seo, Hyung-Kee; Nazeeruddin, Mohammad Khaja; Shin, Hyung-Shik

    2015-04-14

    In this work, the effects of a titanium (Ti) layer on the charge transport and recombination rates of flexible perovskite solar cells were studied. Ti as an efficient barrier layer was deposited directly on PET-ITO flexible substrates through RF magnetic sputtering using a Ti-source and a pressure of ∼5 mTorr. A Ti coated PET-ITO was used for the fabrication of a flexible perovskite solar cell without using any metal oxide layer. The fabricated flexible perovskite solar cell was composed of a PET-ITO/Ti/perovskite (CH3NH3PbI3)/organic hole transport layer of 2,2',7,7'-tetrakis [N,N'-di-p-methoxyphenylamine]-9,9'-spirobifluorene (spiro-OMeTAD)-Li-TFSI/Ag. A high conversion efficiency of ∼8.39% along with a high short circuit current (JSC) of ∼15.24 mA cm(-2), an open circuit voltage (VOC) of ∼0.830 V and a high fill factor (FF) of ∼0.66 was accomplished by the fabricated flexible perovskite solar cell under a light illumination of ∼100 mW cm(-2) (1.5 AM). Intensity-modulated photocurrent (IMPS)/photovoltage spectroscopy (IMVS) studies demonstrated that the fabricated flexible perovskite solar cell considerably reduced the recombination rate. PMID:25747794

  6. Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

    SciTech Connect

    Zhao, Zhao; Zhang, Haijun; Yuan, Hongtao; Wang, Shibing; Lin, Yu; Zeng, Qiaoshi; Xu, Gang; Liu, Zhenxian; Solanki, G. K.; Patel, K. D.; Cui, Yi; Hwang, Harold Y.; Mao, Wendy L.

    2015-06-19

    Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ~60 GPa using multiple experimental techniques and ab-initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.

  7. Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

    DOE PAGESBeta

    Zhao, Zhao; Zhang, Haijun; Yuan, Hongtao; Wang, Shibing; Lin, Yu; Zeng, Qiaoshi; Xu, Gang; Liu, Zhenxian; Solanki, G. K.; Patel, K. D.; et al

    2015-06-19

    Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ~60 GPa using multiple experimental techniques and ab-initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunablemore » transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.« less

  8. Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

    PubMed Central

    Zhao, Zhao; Zhang, Haijun; Yuan, Hongtao; Wang, Shibing; Lin, Yu; Zeng, Qiaoshi; Xu, Gang; Liu, Zhenxian; Solanki, G. K.; Patel, K. D.; Cui, Yi; Hwang, Harold Y.; Mao, Wendy L.

    2015-01-01

    Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ∼60 GPa using multiple experimental techniques and ab-initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides. PMID:26088416

  9. Engineering damping in insulating magnet-metal bilayers using ultrathin spacer layers

    NASA Astrophysics Data System (ADS)

    Aradhya, Sriharsha V.; Jermain, Colin L.; Paik, Hanjong; Heron, John T.; Schlom, Darrell G.; Ralph, Daniel C.; Buhrman, Robert A.

    2015-03-01

    Insulating magnetic materials, particularly yttrium iron garnet (YIG), are of significant interest for fundamental research as well as technological applications. Thus far copper spacer layers of ~10 nm - 1 μm thickness sandwiched between YIG and heavy metal films have been shown to modulate the damping of the magnetic layer either higher or lower. We report on the effect of ultrathin nonmagnetic spacer layers on the damping of YIG with different heavy metal overlayers. We start with YIG films grown by oxide molecular beam epitaxy with thicknesses below 20 nm and Gilbert damping as low as 0.0005. We observe that a spacer layer can increase the damping by 50% in YIG/spacer/Ta samples compared to YIG/Ta, and the increase can be as large 500% for YIG/spacer/Pt compared to YIG/Pt. These observations suggest a significant increase in the effective spin mixing conductance at the YIG-heavy metal interface that might be used to improve the efficiency of the spin torque produced by the spin Hall effect.

  10. Tri-Metal Layered Semitransparent Electrode for Red Phosphorescent Organic Light-Emitting Diodes.

    PubMed

    Lee, Jae Woo; Lee, Ho Won; Lee, Song Eun; Yang, Hyung Jin; Lee, Sung Kyu; Hwang, Kyo Min; Park, Soo Na; Yoon, Seung Soo; Kim, Young Kwan

    2015-10-01

    In this paper, we fabricated tri-metal layered thin film semitransparent electrodes consisting of a thin conductive metal layer, sandwiched between two nickel layers. An equal red phosphorescent organic light-emitting diode (PHOLED) structure was deposited on the anodes of indium tin oxide (ITO) and three types of tri-metal layers (Ni/Al/Ni, Ni/Cu/Ni, and Ni/Ag/Ni, thickness of 3/7/3 nm in common) on a glass substrate. The optical and electrical performances of the device using Ni/Ag/Ni were improved more than the performances of the other devices due to the micro-cavity effect in accordance with the various electrode characteristics. Moreover, we fabricated the same red PHOLED structures on a flexible substrate, as a consequence, showed competitive emission characteristics compared to the devices fabricated on a glass substrate. Therefore, this study could succeed to additional research on flexible display panel and light-emitting devices with ITO-free electrodes. PMID:26726477

  11. Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

    SciTech Connect

    Lee, Albert Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov; Kim, Hoon; Choi, Kisik; Besser, Paul

    2014-01-15

    As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

  12. Characterization of the Electric Double Layer Formation Dynamics of a Metal/Ionic Liquid/Metal Structure.

    PubMed

    Schmidt, Elliot; Shi, Sha; Ruden, P Paul; Frisbie, C Daniel

    2016-06-15

    Although ionic liquids (ILs) have been used extensively in recent years as a high-capacitance "dielectric" in electric double layer transistors, the dynamics of the double layer formation have remained relatively unexplored. Better understanding of the dynamics and relaxation processes involved in electric double layer formation will guide device optimization, particularly with regard to switching speed. In this paper, we explore the dynamical characteristics of an IL in a metal/ionic liquid/metal (M/IL/M) capacitor. In particular, we examine a Au/IL/Au structure where the IL is 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate. The experiments consist of frequency-dependent impedance measurements and time-dependent current vs voltage measurements for applied linear voltage ramps and abrupt voltage steps. The parameters of an equivalent circuit model are determined by fits to the impedance vs frequency data and subsequently verified by calculating the current vs voltage characteristics for the applied potential profiles. The data analysis indicates that the dynamics of the structure are characterized by a wide distribution of relaxation times spanning the range of less than microseconds to longer than seconds. Possible causes for these time scales are discussed. PMID:27213215

  13. Factors affecting metal concentrations in the upper sediment layer of intertidal reedbeds along the river Scheldt.

    PubMed

    Du Laing, Gijs; Vandecasteele, Bart; De Grauwe, Pieter; Moors, Wouter; Lesage, Els; Meers, Erik; Tack, Filip M G; Verloo, Marc G

    2007-05-01

    Factors that play a role in determining metal accumulation in sediments of 26 intertidal marshes which are mainly vegetated by reed plants (Phragmites australis) were assessed along the Scheldt estuary (Belgium and The Netherlands). In the upper 20 cm sediment layer, several physico-chemical properties (clay, silt and sand content, organic matter, carbonate and chloride content, pH and conductivity) and aqua regia extractable metals (Cd, Cr, Cu, Ni, Pb, Zn) were determined. The sediments were significantly contaminated with trace metals. The Cd concentrations often exceeded the Flemish soil remediation thresholds for nature areas, whereas Cr, Cu and Zn levels indicated moderate contamination. Pb concentrations occasionally were high, whereas Ni concentrations leaned towards background values. Organic matter was the single most important predictor variable for total metal contents in regression models, except for Cr. Additional significant predictor variables were clay or chloride content, depending on the metal. Observed metal concentrations at sites within a range of a few km from specific point-sources of metals (e.g. shipyards, industrial areas with metallurgic activities, affluents, major motorways) were somewhat higher than predicted by the models, whereas they were lower than predicted at sites which are regularly subjected to flooding by water of high salinity. The ratio between observed and predicted concentrations seems to be a valuable tool for the identification of areas which are specifically impacted by point sources. PMID:17492090

  14. Micro-layers of polystyrene film preventing metal oxidation: implications in cultural heritage conservation

    NASA Astrophysics Data System (ADS)

    Giambi, Francesca; Carretti, Emiliano; Dei, Luigi; Baglioni, Piero

    2014-12-01

    Protection of surfaces directly exposed to the detrimental action of degradative agents (i.e. oxygen, air pollutants and bacteria) is one of the most important challenges in the field of conservation of works of art. Metallic objects are subjected to specific surface corrosion phenomena that, over the years, make mandatory the research of innovative materials that should avoid the direct contact between the metal surface and the weathering agents. In this paper, the set-up, characterisation and application of a new reversible material for preserving metal artefacts are reported. Micro-layers constituted of low-adhesive polystyrene (PS) films obtained from recycling waste packaging materials made of expanded PS were studied. The morphology and thickness of PS films were characterised by optical, atomic force and scanning electron microscopy (SEM). A further check on thickness was carried out by means of visible spectrophotometry doping the films with a hydrophobic dye. Thermal properties of the PS micro-layers were studied by means of differential scanning calorimetry coupled with optical microscopy. Permeability of the PS films to water vapour was also determined. The potential of the low-adhesive PS films, that enabled an easy removal in case of film deterioration, for preventing metal oxidation was investigated on brass specimens by simulating standard artificial corrosion programmes. Morphological and chemical (coupling the energy-dispersive X-rays spectrometry to SEM measurements) analyses carried out on these metal samples showed promising results in terms of surface protection against corrosion.

  15. Parametric studies to determine the effect of compliant layers on metal matrix composite systems

    NASA Technical Reports Server (NTRS)

    Caruso, J. J.; Chamis, C. C.; Brown, H. C.

    1990-01-01

    Computational simulation studies are conducted to identify compliant layers to reduce matrix stresses which result from the coefficient of thermal expansion mismatch and the large temperature range over which the current metal matrix composites will be used. The present study includes variations of compliant layers and their properties to determine their influence on unidirectional composite and constituent response. Two simulation methods are used for these studies. The first approach is based on a three-dimensional linear finite element analysis of a 9 fiber unidirectional composite system. The second approach is a micromechanics based nonlinear computer code developed to determine the behavior of metal matrix composite system for thermal and mechanical loads. The results show that an effective compliant layer for the SCS 6 (SiC)/Ti-24Al-11Nb (Ti3Al + Nb) and SCS 6 (SiC)/Ti-15V-3Cr-3Sn-3Al (Ti-15-3) composite systems should have modulus 15 percent that of the matrix and a coefficient of thermal expansion of the compliant layer roughly equal to that of the composite system without the CL. The matrix stress in the longitudinal and the transverse tangent (loop) direction are tensile for the Ti3Al + Nb and Ti-15-3 composite systems upon cool down from fabrication. The fiber longitudinal stress is compressive from fabrication cool down. Addition of a recommended compliant layer will result in a reduction in the composite modulus.

  16. Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

    SciTech Connect

    Jiang, Xiang-Wei Li, Shu-Shen

    2014-05-12

    Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnel transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.

  17. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

    PubMed Central

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L.; Zhang, Qianfan; Zhao, Weisheng

    2015-01-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. PMID:26656721

  18. Effects of fiber and interfacial layer architectures on the thermoplastic response of metal matrix composites

    NASA Technical Reports Server (NTRS)

    Pindera, Marek-Jerzy; Freed, Alan D.; Arnold, Steven M.

    1992-01-01

    Examined here is the effect of fiber and interfacial layer morphologies on thermal fields in metal matrix composites (MMCs). A micromechanics model based on an arbitrarily layered concentric cylinder configuration is used to calculate thermal stress fields in MMCs subjected to spatially uniform temperature changes. The fiber is modelled as a layered material with isotropic or orthotropic elastic layers, whereas the surrounding matrix, including interfacial layers, is treated as a strain-hardening, elastoplastic, von Mises solid with temperature-dependent parameters. The solution to the boundary-value problem of an arbitrarily layered concentric cylinder under the prescribed thermal loading is obtained using the local/global stiffness matrix formulation originally developed for stress analysis of multilayered elastic media. Examples are provided that illustrate how the morphology of the SCS6 silicon carbide fiber and the use of multiple compliant layers at the fiber/matrix interface affect the evolution of residual stresses in SiC/Ti composites during fabrication cool-down.

  19. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

    PubMed

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

    2015-01-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. PMID:26656721

  20. Narrow-band impedance of a round metallic pipe with a low conductive thin layer

    NASA Astrophysics Data System (ADS)

    Ivanyan, M.; Grigoryan, A.; Tsakanian, A.; Tsakanov, V.

    2014-02-01

    The new traveling wave structure with a single synchronous mode resonantly excited by the relativistic charge is presented. The structure is composed of a metallic tube with an internally coated low conductive thin layer. It is shown that the impedance of the internally coated metallic tube has a narrow-band single resonance at a high frequency. The analytical presentation of the narrow-band impedance, the wake function, and the frequency of the synchronous mode are obtained. The analytical solutions are compared with exact numerical simulations using the field matching technique.

  1. Flexible polymer optical layer for board-level optical interconnects by highly durable metal imprinting method

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolong; Dou, Xinyuan; Lin, Xiaohui; Chen, Ray T.

    2010-02-01

    In this paper, we presented fabrication of nickel based metal mold with 45° tilted surfaces on both ends of the channel waveguide through electroplating process. To obtain a precise 45° tilted angle, a 50μm thick SU-8 layer was UV exposed under de-ionized water, with repeatable error control of 0.5°. The polymeric waveguide array with 45° micromirrors, which is formed by a UV imprinting method with the fabricated metallic mold, shows total insertion losses around 4dB, propagation loss around 0.18dB/cm and 75% coupling efficiency.

  2. Structure of ultrathin oxide layers on metal surfaces from grazing scattering of fast atoms

    NASA Astrophysics Data System (ADS)

    Winter, H.; Seifert, J.; Blauth, D.; Busch, M.; Schüller, A.; Wethekam, S.

    2009-10-01

    The structure of ultrathin oxide layers grown on metal substrates is investigated by grazing scattering of fast atoms from the film surface. We present three recent experimental techniques which allow us to study the structure of ordered oxide films on metal substrates in detail. (1) A new variant of a triangulation method with fast atoms based on the detection of emitted electrons, (2) rainbow scattering under axial surface channeling conditions, and (3) fast atom diffraction (FAD) for studies on the structure of oxide films. Our examples demonstrate the attractive features of grazing fast atom scattering as a powerful analytical tool in surface physics.

  3. Enhanced Magnetoelectric Coupling in Layered Structure of Piezoelectric Bimorph and Metallic Alloy

    NASA Astrophysics Data System (ADS)

    Petrov, V. M.; Bichurin, M. I.; Lavrentyeva, K. V.; Leontiev, V. S.

    2016-08-01

    We have investigated the enhanced magnetoelectric (ME) coupling in a layered structure of piezoelectric bimorph and magnetostrictive metallic alloy. The observed ME coefficient in the piezoelectric bimorph-based structure was found to be two times higher than in the traditional piezoelectric/magnetostrictive bilayer. The observed enhancement in ME coupling strength is related to equal signs of induced voltage in both lead zirconate titanate layers with opposite poling directions due to the flexural deformations. The piezoelectric bimorph-based structure has promising potential for sensor and technological applications.

  4. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  5. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene. PMID:24407201

  6. Synthesis, characterization and application of two-dimensional layered metal hydroxides for environmental remediation purposes

    NASA Astrophysics Data System (ADS)

    Machingauta, Cleopas

    Two-dimensional layered nano composites, which include layered double hydroxides (LDHs), hydroxy double salts (HDSs) and layered hydroxide salts (LHSs) are able to intercalate different molecular species within their gallery space. These materials have a tunable structural composition which has made them applicable as fire retardants, adsorbents, catalysts, catalyst support materials, and ion exchangers. Thermal treatment of these materials results in destruction of the layers and formation of mixed metal oxides (MMOs) and spinels. MMOs have the ability to adsorb anions from solution and may also regenerate layered structures through a phenomenon known as memory effect. Zinc-nickel hydroxy nitrate was used for the uptake of a series of halogenated acetates (HAs). HAs are pollutants introduced into water systems as by-products of water chlorination and pesticide degradation; their sequestration from water is thus crucial. Optimization of layered materials for controlled uptake requires an understanding of their ion-exchange kinetics and thermodynamics. Exchange kinetics of these anions was monitored using ex-situ PXRD, UV-vis, HPLC and FTIR. It was revealed that exchange rates and uptake efficiencies are related to electronic spatial extents and the charge on carboxyl-oxygen atoms. In addition, acetate and nitrate-based HDSs were used to explore how altering the hydroxide layer affects uptake of acetate/nitrate ions. Changing the metal identities affects the interaction of the anions with the layers. From FTIR, we observed that nitrates coordinate in a D3h and Cs/C 2v symmetry; the nitrates in D3h symmetry were easily exchangeable. Interlayer hydrogen bonding was also revealed to be dependent on metal identity. Substituting divalent cations with trivalent cations produces materials with a higher charge density than HDSs and LHSs. A comparison of the uptake efficiency of zinc-aluminum, zinc-gallium and zinc-nickel hydroxy nitrates was performed using trichloroacetic

  7. Characteristics of laser ultrasound interaction with multi-layered dissimilar metals adhesive interface by numerical simulation

    NASA Astrophysics Data System (ADS)

    Zhang, Kuanshuang; Zhou, Zhenggan; Zhou, Jianghua; Sun, Guangkai

    2015-10-01

    The characteristics of laser-generated ultrasonic wave interaction with multi-layered dissimilar metals adhesive interface are investigated by finite element method (FEM). The physical model of laser-generated ultrasonic wave in the multi-layered dissimilar metals adhesive structure is built. The surface temperature evolution with different laser power densities is analyzed to obtain the parameters of pulsed laser with thermoelastic regime. The differences of laser ultrasonic waves with different center frequencies measured at the center of laser irradiation would verify the interfacial features of adhesive structures. The optimum frequency range and probe point would be beneficial for the detection of the small void defect. The numerical results indicate that the different frequency range and probe points would evidently influence the identification and quantitative characterization of the small void defect. The research findings would lay a foundation for testing interfacial integrity.

  8. Super-resolution imaging of a single metal layer: high loss but superior resolution

    NASA Astrophysics Data System (ADS)

    Guo, Kai; Liu, Jianlong; Zhou, Keya; Liu, Shutian

    2016-04-01

    In this work, we re-analyze the influence of the loss on the super-resolution imaging of a single metal layer superlens system and reveal its positive role of the imaging. The analysis is based on the surface plasmon polariton (SPP) theory. We show that SPP mode with high loss could suppress the amplification of evanescent waves and concentrate the energy, thus contribute to the imaging. We propose to surround the metal layer with high index medium to increase the loss of the SPP modes. The proposed structure shows better performance in super-resolution imaging than the low loss cases. Numerical simulations are performed to demonstrate the results by using two-dimensional finite element method.

  9. Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Sengupta, Parijat; Bellotti, Enrico

    2016-05-01

    We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe2 to MoS2; the spin Hall conductivity of WSe2 was found to be larger.

  10. Modulation of electronic properties from stacking orders and spin-orbit coupling for 3R-type MoS2.

    PubMed

    Fan, Xiaofeng; Zheng, W T; Kuo, Jer-Lai; Singh, David J; Sun, C Q; Zhu, W

    2016-01-01

    Two-dimensional crystals stacked by van der Waals coupling, such as twisted graphene and coupled graphene-BN layers with unusual phenomena have been a focus of research recently. As a typical representative, with the modulation of structural symmetry, stacking orders and spin-orbit coupling, transitional metal dichalcogenides have shown a lot of fascinating properties. Here we reveal the effect of stacking orders with spin-orbit coupling on the electronic properties of few-layer 3R-type MoS2 by first principles methods. We analyze the splitting of states at the top of valence band and the bottom of conduction band, following the change of stacking order. We find that regardless of stacking orders and layers' number, the spin-up and spin-down channels are evidently separated and can be as a basis for the valley dependent spin polarization. With a model Hamiltonian about the layer's coupling, the band splitting can be effectively analyzed by the coupling parameters. It is found that the stacking sequences, such as abc and abca, have the stronger nearest-neighbor coupling which imply the popular of periodic abc stacking sequence in natural growth of MoS2. PMID:27053462

  11. GMR sensing array technique validation study for the inspection of multi-layer metallic structures

    NASA Astrophysics Data System (ADS)

    Motes, Doyle; Aldrin, John C.; Keiser, Mark; Steffes, Gary; Forsyth, David S.

    2013-01-01

    Giant Magnetoresistive (GMR) sensing arrays have been developed to detect fatigue cracks in thick, multi-layered metallic structures. As part of a program conducted by the U.S. Air Force Research Laboratory, fatigue crack specimens were fabricated to provide inspection targets for a GMR array. These specimens were mounted to simulate a wing structure and inspected using a Boeing Mobile Automated Scanner (MAUS). Probability of Detection (POD) from inspections and the results of capability studies are presented.

  12. Layered SiC sheets: A promising metal-free catalyst for NO reduction.

    PubMed

    Feng, Jing wen; Liu, Yue jie; Zhao, Jing xiang

    2015-07-01

    Recently, the catalytic reduction is shown to be an effective method to remove the harmful NO. In terms of the high cost and limited supply of the traditional transition metal-based catalysts, the novel metal-free catalyst is highly desirable for NO reduction. Here, density functional theory (DFT) computations were performed to explore the potentials of layered SiC sheets as a metal-free catalyst for NO reduction. From our DFT results, it can be predicted that layered SiC sheets exhibit superior catalytic activity toward NO reduction. In particular, a dimer mechanism is shown to be more favorable than the direct dissociation one for NO reduction on this metal-free catalyst and a three-step mechanism is involved in this process: (1) the formation of a (NO)2 dimer on layered SiC sheet, followed by (2) its dissociation into N2O+Oad, and (3) the recovery of catalyst by subsequent NO. The trans-(NO)2 dimer might be a necessary intermediate, in which the calculated barrier for the rate-determining step along the energetically most favorable pathway is 0.722 eV. The high reactivity of layered SiC sheets may be attributed to the certain amount of charge transfer from the catalyst to (NO)2 dimer, which shortens the NN bonding and thus stabilizes these systems due to the extra electrons on the dimers. This excellent catalytic activity provides a useful guidance to design the next generation catalysts for NO reduction with lower cost and higher activity. PMID:26043660

  13. Design technology co-optimization for 14/10nm metal1 double patterning layer

    NASA Astrophysics Data System (ADS)

    Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

    2016-03-01

    Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

  14. Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

    NASA Astrophysics Data System (ADS)

    Zhao, Zhao; Khorasani, Arash Elhami; Theodore, N. D.; Dhar, A.; Alford, T. L.

    2015-11-01

    Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO2/Au/TiO2 and TiO2/Ag/TiO2, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

  15. Origin of photogenerated carrier recombination at the metal-active layer interface in polymer solar cells.

    PubMed

    Kumar, Mukesh; Dubey, Ashish; Reza, Khan Mamun; Adhikari, Nirmal; Qiao, Qiquan; Bommisetty, Venkat

    2015-11-01

    The role of the metal-active layer interface in photogenerated recombination has been investigated using nanoscale current sensing atomic force microscopy (CS-AFM) and intensity modulated photocurrent spectroscopy (IMPS) in as-deposited, pre-annealed and post-annealed bulk heterojunction (BHJ) solar cells. Aluminum (Al) confined post-annealed BHJ solar cells exhibited a significantly improved device efficiency compared to pre-annealed BHJ solar cells having similar photocarrier harvesting ability in the active layer. The nanoscale topography and CS-AFM results indicate a uniform PCBM rich phase at the metal-active layer interface in the post-annealed cells, but PCBM segregation in the pre-annealed cells. These two different annealing processes showed different carrier dynamics revealed using IMPS under various light intensities. The IMPS results suggest reduced photo generated carrier recombination in uniform PCBM rich post-annealed BHJ solar cells. This study reveals the importance of the metal-bend interface in BHJ solar cells in order to obtain efficient charge carrier extraction for high efficiency. PMID:26431263

  16. Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

    SciTech Connect

    Zhao, Zhao; Alford, T. L.; Khorasani, Arash Elhami; Theodore, N. D.; Dhar, A.

    2015-11-28

    Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

  17. Detection of metal binding sites on functional S-layer nanoarrays using single molecule force spectroscopy.

    PubMed

    Tang, Jilin; Ebner, Andreas; Kraxberger, Bernhard; Leitner, Michael; Hykollari, Alba; Kepplinger, Christian; Grunwald, Christian; Gruber, Hermann J; Tampé, Robert; Sleytr, Uwe B; Ilk, Nicola; Hinterdorfer, Peter

    2009-10-01

    Crystalline bacterial cell surface layers (S-layers) show the ability to recrystallize into highly regular pattern on solid supports. In this study, the genetically modified S-layer protein SbpA of Lysinibacillus sphaericus CCM 2177, carrying a hexa-histidine tag (His(6)-tag) at the C-terminus, was used to generate functionalized two-dimensional nanoarrays on a silicon surface. Atomic force microscopy (AFM) was applied to explore the topography and the functionality of the fused His(6)-tags. The accessibility of the His(6)-tags was demonstrated by in-situ anti-His-tag antibody binding to the functional S-layer array. The metal binding properties of the His(6)-tag was investigated by single molecule force microscopy. For this purpose, newly developed tris-NTA was tethered to the AFM tips via a flexible polyethylene glycol (PEG) linker. The functionalized tips showed specific interactions with S-layer containing His(6)-tags in the presence of nickel ions. Thus the His(6)-tag is located at the outer surface of the S-layer and can be used for stable but reversible attachment of functional tris-NTA derivatives. PMID:19232541

  18. Improved air stability of perovskite solar cells via solution-processed metal oxide transport layers

    NASA Astrophysics Data System (ADS)

    You, Jingbi; Meng, Lei; Song, Tze-Bin; Guo, Tzung-Fang; Yang, Yang (Michael); Chang, Wei-Hsuan; Hong, Ziruo; Chen, Huajun; Zhou, Huanping; Chen, Qi; Liu, Yongsheng; De Marco, Nicholas; Yang, Yang

    2016-01-01

    Lead halide perovskite solar cells have recently attracted tremendous attention because of their excellent photovoltaic efficiencies. However, the poor stability of both the perovskite material and the charge transport layers has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. Here, we report a solution-processed lead halide perovskite solar cell that has p-type NiOx and n-type ZnO nanoparticles as hole and electron transport layers, respectively, and shows improved stability against water and oxygen degradation when compared with devices with organic charge transport layers. Our cells have a p-i-n structure (glass/indium tin oxide/NiOx/perovskite/ZnO/Al), in which the ZnO layer isolates the perovskite and Al layers, thus preventing degradation. After 60 days storage in air at room temperature, our all-metal-oxide devices retain about 90% of their original efficiency, unlike control devices made with organic transport layers, which undergo a complete degradation after just 5 days. The initial power conversion efficiency of our devices is 14.6 ± 1.5%, with an uncertified maximum value of 16.1%.

  19. Improved air stability of perovskite solar cells via solution-processed metal oxide transport layers.

    PubMed

    You, Jingbi; Meng, Lei; Song, Tze-Bin; Guo, Tzung-Fang; Yang, Yang Michael; Chang, Wei-Hsuan; Hong, Ziruo; Chen, Huajun; Zhou, Huanping; Chen, Qi; Liu, Yongsheng; De Marco, Nicholas; Yang, Yang

    2016-01-01

    Lead halide perovskite solar cells have recently attracted tremendous attention because of their excellent photovoltaic efficiencies. However, the poor stability of both the perovskite material and the charge transport layers has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. Here, we report a solution-processed lead halide perovskite solar cell that has p-type NiO(x) and n-type ZnO nanoparticles as hole and electron transport layers, respectively, and shows improved stability against water and oxygen degradation when compared with devices with organic charge transport layers. Our cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the ZnO layer isolates the perovskite and Al layers, thus preventing degradation. After 60 days storage in air at room temperature, our all-metal-oxide devices retain about 90% of their original efficiency, unlike control devices made with organic transport layers, which undergo a complete degradation after just 5 days. The initial power conversion efficiency of our devices is 14.6 ± 1.5%, with an uncertified maximum value of 16.1%. PMID:26457966

  20. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2.

    PubMed

    Zhang, Chendong; Chen, Yuxuan; Johnson, Amber; Li, Ming-Yang; Li, Lain-Jong; Mende, Patrick C; Feenstra, Randall M; Shih, Chih-Kang

    2015-10-14

    By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasi-particle electronic structures in transition metal dichalcogenides, including the quasi-particle gaps, critical point energy locations, and their origins in the Brillouin zones. We show that single layer WSe2 surprisingly has an indirect quasi-particle gap with the conduction band minimum located at the Q-point (instead of K), albeit the two states are nearly degenerate. We have further observed rich quasi-particle electronic structures of transition metal dichalcogenides as a function of atomic structures and spin-orbit couplings. Such a local probe for detailed electronic structures in conduction and valence bands will be ideal to investigate how electronic structures of transition metal dichalcogenides are influenced by variations of local environment. PMID:26389585

  1. Extraordinary terahertz transmission through a double-layer metal array with closed ring resonators

    NASA Astrophysics Data System (ADS)

    Guo, Yadong; Yuan, Zongheng; Yuan, Yuyang; Wang, Sheng; Zhang, Wentao

    2016-07-01

    In this paper, we numerically investigate the transmission properties of a terahertz metamaterial. This metamaterial is composed of metal-dielectric-metal, which consists of metallic layers with an air hole array and one coaxial closed ring resonator in the air hole. The metamaterial in the THz range of 0.2-1 THz has three transmission peaks. We provide an explanation of the transmission peaks by means of the surface plasmon polaritons and magnetic polaritons resonance based on the distribution of the surface current. Then according to the magnetic polaritons resonance, the equivalent circuit model of the metamaterial is established. The effects of geometric parameters on the transmission peaks are discussed and studied by an equivalent circuit model and surface plasmon polaritons dispersion relation. Our metamaterial promises dual-band potential applications such as filters.

  2. Friction modifier using adherent metallic multilayered or mixed element layer conversion coatings

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F. (Inventor); Defalco, Frank G. (Inventor); Starks, Sr., Lloyd L. (Inventor)

    2012-01-01

    A process for creating conversion coatings and spin, drawing, and extrusion finishes for surfaces, wherein the conversion coatings and spin, drawing, and extrusion finishes contain potassium, phosphorus, nitrogen, silicon, and one or more non-alkaline metals. The process comprises forming a first aqueous solution of silicate, potassium hydroxide, and ammonium hydroxide; forming a second aqueous solution of water, phosphoric acid, ammonium hydroxide, an alkali metal hydroxide, and one or more non-alkaline metals, and then combining the first solution with the second solution to form a final solution. This final solution forms an anti-friction multi-layer conversion coating or a spin, drawing, and extrusion finish on a surface when applied to the surface, either directly or as an additive in lubricating fluids.

  3. Using atmospheric fallout to date organic horizon layers and quantify metal dynamics during decomposition

    NASA Astrophysics Data System (ADS)

    Kaste, James M.; Bostick, Benjamin C.; Heimsath, Arjun M.; Steinnes, Eiliv; Friedland, Andrew J.

    2011-03-01

    High concentrations of metals in organic matter can inhibit decomposition and limit nutrient availability in ecosystems, but the long-term fate of metals bound to forest litter is poorly understood. Controlled experiments indicate that during the first few years of litter decay, Al, Fe, Pb, and other metals that form stable complexes with organic matter are naturally enriched by several hundred percent as carbon is oxidized. The transformation of fresh litter to humus takes decades, however, such that current datasets describing the accumulation and release of metals in decomposing organic matter are timescale limited. Here we use atmospheric 210Pb to quantify the fate of metals in canopy-derived litter during burial and decay in coniferous forests in New England and Norway where decomposition rates are slow and physical soil mixing is minimal. We measure 210Pb inventories in the O horizon and mineral soil and calculate a 60-630 year timescale for the production of mobile organo-metallic colloids from the decomposition of fresh forest detritus. This production rate is slowest at our highest elevation (˜1000 m) and highest latitude sites (>63°N) where decomposition rates are expected to be low. We calculate soil layer ages by assuming a constant supply of atmospheric 210Pb and find that they are consistent with the distribution of geochemical tracers from weapons fallout, air pollution, and a direct 207Pb application at one site. By quantifying a gradient of organic matter ages with depth in the O horizon, we describe the accumulation and loss of metals in the soil profile as organic matter transforms from fresh litter to humus. While decomposition experiments predict that Al and Fe concentrations increase during the initial few years of decay, we show here that these metals continue to accumulate in humus for decades, and that enrichment occurs at a rate higher than can be explained by quantitative retention during decomposition alone. Acid extractable Al and Fe

  4. Metallic single-unit-cell orthorhombic cobalt diselenide atomic layers: robust water-electrolysis catalysts.

    PubMed

    Liang, Liang; Cheng, Hao; Lei, Fengcai; Han, Jun; Gao, Shan; Wang, Chengming; Sun, Yongfu; Qamar, Shaista; Wei, Shiqiang; Xie, Yi

    2015-10-01

    The bottleneck in water electrolysis lies in the kinetically sluggish oxygen evolution reaction (OER). Herein, conceptually new metallic non-metal atomic layers are proposed to overcome this drawback. Metallic single-unit-cell CoSe2 sheets with an orthorhombic phase are synthesized by thermally exfoliating a lamellar CoSe2 -DETA hybrid. The metallic character of orthorhombic CoSe2 atomic layers, verified by DFT calculations and temperature-dependent resistivities, allows fast oxygen evolution kinetics with a lowered overpotential of 0.27 V. The single-unit-cell thickness means 66.7 % of the Co(2+) ions are exposed on the surface and serve as the catalytically active sites. The lowered Co(2+) coordination number down to 1.3 and 2.6, gives a lower Tafel slope of 64 mV dec(-1) and higher turnover frequency of 745 h(-1) . Thus, the single-unit-cell CoSe2 sheets have around 2 and 4.5 times higher catalytic activity compared with the lamellar CoSe2 -DETA hybrid and bulk CoSe2 . PMID:26235276

  5. Fabrication and design of metal nano-accordion structures using atomic layer deposition and interference lithography

    NASA Astrophysics Data System (ADS)

    Min, J.-H.; Bagal, A.; Mundy, J. Z.; Oldham, C. J.; Wu, B.-I.; Parsons, G. N.; Chang, C.-H.

    2016-02-01

    Metal nanostructures have attractive electrical and thermal properties as well as structural stability, and are important for applications in flexible conductors. In this study, we have developed a method to fabricate and control novel complex platinum nanostructures with accordion-like profile using atomic layer deposition on lithographically patterned polymer templates. The template removal process results in unique structural transformation of the nanostructure profile, which has been studied and modeled. Using different template duty cycles and aspect ratios, we have demonstrated a wide variety of cross-sectional profiles from wavy geometry to pipe array patterns. These complex thin metal nanostructures can find applications in flexible/stretchable electronics, photonics and nanofluidics.Metal nanostructures have attractive electrical and thermal properties as well as structural stability, and are important for applications in flexible conductors. In this study, we have developed a method to fabricate and control novel complex platinum nanostructures with accordion-like profile using atomic layer deposition on lithographically patterned polymer templates. The template removal process results in unique structural transformation of the nanostructure profile, which has been studied and modeled. Using different template duty cycles and aspect ratios, we have demonstrated a wide variety of cross-sectional profiles from wavy geometry to pipe array patterns. These complex thin metal nanostructures can find applications in flexible/stretchable electronics, photonics and nanofluidics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08566g

  6. Metal to insulator quantum-phase transition in few-layered ReS2

    NASA Astrophysics Data System (ADS)

    Pradhan, Nihar; Rhodes, Daniel; Lu, Zhenguang; Smirnov, Dmitry; Manousakis, Efstratios; Dobrosavljevic, Vladimir; Balicas, Luis; McCreary, Amber; Feng, Simin; Terrones, Maurico; Namburu, Raju; Dubey, Madan; Hight Walker, Angela; Terrones, Humberto

    ReS2 a layer-independent direct band-gap semiconductor of 1.5 eV implies a potential for its use in optoelectronic applications. Here, we present an overall evaluation of transport and anisotropic Raman of few-layered ReS2 FET. ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ~ 30cm2 /Vs at T = 300 K which increases up to ~ 350cm2 /vs at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of nthe resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallicT2-dependence. The electric-field induced metallic state observed in MoS2 was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of Tand n, we find that the metallic state of ReS2 results from a second-order metal to insulator transition driven by electronic correlations. Supported by U.S. Army Research Office MURI Grant No. W911NF-11-1-0362.

  7. Metal to insulator quantum-phase transition in few-layered ReS2

    NASA Astrophysics Data System (ADS)

    Pradhan, Nihar; McCreary, Amber; Rhodes, Daniel; Lu, Zhenguang; Smirnov, Dmitry; Manousakis, Efstratios; Feng, Simin; Namburu, Raju; Dubey, Madan; Hight Walker, Angela; Terrones, Humberto; Terrones, Mauricio; Dobrosavljevic, Vladimir; Balicas, Luis

    ReS2 a layer-independent direct band-gap semiconductor of 1.5 eV implies a potential for its use in optoelectronic applications. Here, we present an overall evaluation of transport and anisotropic Raman of few-layered ReS2 FET. ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ~30 cm2/Vs at T = 300 K which increases up to ~350 cm2/vs at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of nthe resistivity decreases by a factor >7 upon cooling to 2 K and displays a metallicT2 -dependence. The electric-field induced metallic state observed in MoS2 was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of Tand n, we find that the metallic state of ReS2 results from a second-order metal to insulator transition driven by electronic correlations. Supported by U.S. Army Research Office MURI Grant No. W911NF-11-1-0362.

  8. Stabilization of Wave Formation on a Contact Boundary of Metal Layers at an Oblique Impact during Kelvin - Helmholtz Instability Development

    SciTech Connect

    Drennov, O. B.; Mikhailov, A. L.

    2006-07-28

    The elimination effect of disturbances and mutual mixing on a contact boundaries of metal layers at oblique impact during Kelvin - Helmholtz instability development was established and investigated. Thin layers of metal coatings ({delta}{approx}30 {mu}m) reduce amplitude of disturbance realization in 10 - 100 times and eliminate mutual mixing of contacting materials (eliminate the formation of a welded point). The foils of the same materials and thicknesses are not characterized by the same strong stabilizing properties. This stabilizing effect is explained by physical properties of a metal coating as a whole. Thermophysical limits for coating layers are pointed out.

  9. High-contrast top-emitting organic light-emitting diodes with a Ni/ZnS/CuPc/Ni contrast-enhancing stack and a ZnS anti-reflection layer

    NASA Astrophysics Data System (ADS)

    Chen, Shufen; Xie, Jun; Yang, Yang; Chen, Chunyan; Huang, Wei

    2010-09-01

    High-contrast top-emitting organic light-emitting diodes are successfully fabricated using a Ni/ZnS/copper-phthalocyanine (CuPc)/Ni contrast-enhancing stack (CES) and a ZnS anti-reflection (AR) layer. The CES and AR layer that are outside the active region reduce the complexity of the device design although their utilization affects the device electrical performance due to morphological deterioration of the device films. After the thickness optimization of the CES and AR coating, high contrast ratios of 139.4 : 1 and 462.3 : 1 are obtained under on-state luminances of 300 and 1000 cd m-2 and an ambient luminance of 140 lux. The reduced reflectance of ambient illumination is mainly due to the anti-reflection ZnS layer and the strong absorption of ambient illumination by the Ni layers, where the CES structure is beneficial for the absorption of ambient illumination by the interfacial reflection of Ni/ZnS and CuPc/Ni.

  10. Space plasma physics: isotopic stack: measurement of heavy cosmic rays.

    PubMed

    Beaujean, R; Schmidt, M; Enge, W; Siegmon, G; Krause, J; Fischer, E

    1984-07-13

    A stack of plastic nuclear track detectors was exposed to heavy cosmic rays on the pallet of Spacelab 1. Some layers of the stack were rotated with respect to the main stack to determine the arrival time of the particles. After return of the stack the latent particle tracks are revealed by chemical etching. Under the optical microscope the charge, mass, energy, and impact direction of the particles can be deduced from the track geometry. PMID:17837938

  11. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    PubMed

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer. PMID:26726688

  12. Metal dicyanamide layered coordination polymers with cyanopyridine co-ligands: Synthesis, crystal structures and magnetism

    SciTech Connect

    Du Miao . E-mail: dumiao@public.tpt.tj.cn; Wang Qian; Wang Ying; Zhao Xiaojun; Ribas, Joan

    2006-12-15

    A series of metal dicyanamide (dca) coordination polymers combined with cyanopyridine (cypy) terminal co-ligands, namely, [Co{sub 2}(dca){sub 4}(4-cypy){sub 4}] {sub n} (1), [Cd(dca){sub 2}(4-cypy){sub 2}] {sub n} (2), [Fe(dca){sub 2}(3-cypy){sub 2}] {sub n} (3) and [Co(dca){sub 2}(3-cypy){sub 2}] {sub n} (4), have been synthesized at the ambient conditions. X-ray single crystal diffraction reveals that complexes 1-4 have similar metal-dca coordination layers in which the octahedral metal centers are connected by {mu} {sub 1,5}-dca linkers. Notably, three types of 3-D packing lattices are observed for these layered arrays. The thermal stabilities of such new crystalline materials have been studied by thermogravimetric analysis of mass loss. The magnetic properties of the Co{sup II} and Fe{sup II} complexes have been investigated and discussed in detail. A discrete mononuclear molecule [Cd(dca){sub 2}(pyom){sub 2}] (5) is also described, in which the chelated ligand O-methyl picolinimidate (pyom) arises from the addition of methanol solvent across the C{identical_to}N bond of 2-cypy. - Graphical abstract: A series of new metal dicyanamide complexes with cyanopyridine terminal co-ligands have been prepared and structurally determined by X-ray single-crystal diffraction. The magnetic properties of the Co{sup II} and Fe{sup II} layered coordination polymers are also discussed.

  13. Novel nanofiltration membranes consisting of a sulfonated pentablock copolymer rejection layer for heavy metal removal.

    PubMed

    Thong, Zhiwei; Han, Gang; Cui, Yue; Gao, Jie; Chung, Tai-Shung; Chan, Sui Yung; Wei, Shawn

    2014-12-01

    Facing stringent regulations on wastewater discharge containing heavy metal ions, various industries are demanding more efficient and effective treatment methods. Among the methods available, nanofiltration (NF) is a feasible and promising option. However, the development of new membrane materials is constantly required for the advancement of this technology. This is a report of the first attempt to develop a composite NF membrane comprising a molecularly designed pentablock copolymer selective layer for the removal of heavy metal ions. The resultant NF membrane has a mean effective pore diameter of 0.50 nm, a molecular weight cutoff of 255 Da, and a reasonably high pure water permeability (A) of 2.4 LMH/bar. The newly developed NF membrane can effectively remove heavy metal cations such as Pb(2+), Cd(2+), Zn(2+), and Ni(2+) with a rejection of >98.0%. On the other hand, the membrane also shows reasonably high rejections toward anions such as HAsO4(2-) (99.9%) and HCrO4(-) (92.3%). This performance can be attributed to (1) the pentablock copolymer's unique ability to form a continuous water transport passageway with a defined pore size and (2) the incorporation of polyethylenimine as a gutter layer between the selective layer and the substrate. To the best of our knowledge, this is the first reported NF membrane comprising this pentablock copolymer as the selective material. The promising preliminary results achieved in this study provide a useful platform for the development of new NF membranes for heavy metal removal. PMID:25369240

  14. Anion-intercalated layered double hydroxides modified test strips for detection of heavy metal ions.

    PubMed

    Wang, Nan; Sun, Jianchao; Fan, Hai; Ai, Shiyun

    2016-02-01

    In this work, a novel approach for facile and rapid detection of heavy metal ions using anion-intercalated layered double hydroxides (LDHs) modified test strips is demonstrated. By intercalating Fe(CN)6(4-) or S(2-) anions into the interlayers of LDHs on the filter paper, various heavy metal ions can be easily detected based on the color change before and after reaction between the anions and the heavy metal ions. Upon the dropping of heavy metal ions solutions to the test strips, the colors of the test strips changed instantly, which can be easily observed by naked eyes. With the decrease of the concentration, the color depth changed obviously. The lowest detection concentration can be up to 1×10(-6) mol L(-1). Due to the easily intercalation of anions into the interlayer of the LDHs on test trips, this procedure provides a general method for the construction of LDHs modified test strips for detection of heavy metal ions. The stability of the prepared test strips is investigated. Furthermore, all the results were highly reproducible. The test strips may have potential applications in environmental monitoring fields. PMID:26653453

  15. Electrical Characterization of Metal-Ferroelectric-Insulator- Semiconductor having Double Layered Insulator for Memory Applications

    NASA Astrophysics Data System (ADS)

    Ismail, L. N.; Wahid, M. H.; Habibah, Z.; Herman, S. H.; Rozana, M. D.; Rusop, M.

    2014-08-01

    Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si) substrate. Both ferroelectric and insulator films were prepared by sol-gel spin coating method. The electrical behaviour of metal-ferroelectric-metal (MFM) structure with PVDF-TrFE film and metal-insulator- metal (MIM) structure PMMA:TiO2 film exhibited different current characteristics. The capacitance of the MFIS devices was found to be 0.42 and 0.29 nF at frequency of 1kHz and 1 MHz respectively. Meanwhile, the dielectric loss values are constant (~60 × 10-3) in the frequency range from 100 Hz to 100 kHz. I-V results for MFIS are much higher than MIM and MFM is due to there is a trapped holes/electron located at the semiconductor- insulator interface which contributes to high leakage current in the MFIS device. We conclude, although interposing the PMMA :TiO2 nanocomposite insulator layer between the semiconductor and Al electrodes degrades the MFIS performance, nevertheless, they remain sufficiently good for use in organic electronic devices.

  16. Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours.

    PubMed

    Lim, Hyungkwang; Soni, Rohit; Kim, Dohun; Kim, Guhyun; Kornijcuk, Vladimir; Kim, Inho; Park, Jong-Keuk; Hwang, Cheol Seong; Jeong, Doo Seok

    2016-08-25

    We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions. PMID:27510607

  17. Creep of a crystalline metallic layer induced by high energy heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Benyagoub, A.; Chamberod, A.; Dran, J. C.; Dunlop, A.; Garrido, F.; Klaumünzer, S.; Thomé, L.

    1996-02-01

    The atomic transport induced by ion electronic energy loss in amorphous systems is studied on metallic sandwiches irradiated at liquid nitrogen temperature with 500 MeV iodide ions delivered by the VICKSI accelerator of the Hahn-Meitner-Institut (Berlin). The sandwiches are composed of two amorphous Ni3B layers of 1 or 1.5 μm thickness embedding a crystalline Au or W layer of thickness varying from 20 to 900 nm. Rutherford backscattering experiments using a 3.6 MeV He2+ beam delivered by the ARAMIS accelerator of the CSNSM (Orsay) were performed in order to determine the modifications of the geometry of the sandwiches after swift heavy ion irradiation. The results show a huge creep of the crystalline part of the sandwiches. The magnitude of this creep depends on the nature of the crystalline layer (Au or W) and increases steadily with the irradiating ion fluence with a strain-rate decreasing with increasing layer thickness. This creep phenomenon is due to the plastic deformation process occurring in the surrounding amorphous layers and is induced by ion electronic energy loss. A simple rheological model is developed to reproduce the observed effects.

  18. A Initio Lcao Electronic Structure Calculations of Layered Transition Metal Compounds.

    NASA Astrophysics Data System (ADS)

    Dawson, William G.

    1987-09-01

    Available from UMI in association with The British Library. In this work the electronic structure of three systems of layered transition metal compounds are examined using an ab initio tight binding (LCAO) method using the Xalpha exchange/correlation approximation: group VI ditellurides, group IV trichalcogenides and quaternary copper oxide defect-perovskites. A chemical pseudopotential argument is presented in order to justify the use of a small basis set of atomic orbitals. The group VI transition metal compounds MoTe_2 and WTe _2 show strong metal-metal interactions and MoTe_2 undergoes an unusual phase transition with the lattice parameter perpendicular to the layers decreasing with increasing temperature. The group IV transition metal trichalcogenides provide a useful series for study due to their quasi-1-dimensional character and the occurrence of two closely related structural variants. The atypical compound ZrTe_3 is given special attention because of its apparent semimetallic nature. The final group of compounds studied are the high Tc superconducting ceramics Ba-La-Cu-O and Ba-Y-Cu-O. The technological importance of compounds with zero resistance and showing the Meissner effect (expelling magnetic fields) above liquid nitrogen temperatures and the, as yet, undefined nature of the mechanism of superconductivity stresses the need to carefully examine the electronic structure of these materials. The role of oxygen vacancies, the charge state of the copper ions and the possibility of structural phase transitions are some of the topics considered here. The use of an atomic-orbital basis allows a comparatively straightforward description of the chemical bonding in a crystal--especially useful when the unit cell contains a large number of atoms.

  19. Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

    NASA Astrophysics Data System (ADS)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Guo, Yongbo; Xie, Wenkun

    2015-11-01

    Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly increase in the initial stage and fluctuates at their equilibrium position at stable cutting stage, which is because of the energy accumulation and release leading to the dislocation emission. A typically stacking fault tetrahedra is nucleated in the subsurface defect layer, which is induced by the complex tension and compression stress. The stress-induced mechanism of stacking fault tetrahedra formation is investigated by atomic scale evolution and local stress distribution.

  20. Layer formation on metal surfaces in lead-bismuth at high temperatures in presence of zirconium

    NASA Astrophysics Data System (ADS)

    Loewen, Eric P.; Yount, Hannah J.; Volk, Kevin; Kumar, Arvind

    2003-09-01

    If the operating temperature lead-bismuth cooled fission reactor could be extended to 800 °C, they could produce hydrogen directly from water. A key issue for the deployment of this technology at these temperatures is the corrosion of the fuel cladding and structural materials by the lead-bismuth. Corrosion studies of several metals were performed to correlate the interaction layer formation rate as a function of time, temperature, and alloy compositions. The interaction layer is defined as the narrow band between the alloy substrate and the solidified lead-bismuth eutectic on the surface. Coupons of HT-9, 410, 316L, and F22 were tested at 550 and 650 °C for 1000 h inside a zirconium corrosion cell. The oxygen potential ranged from approximately 10 -22 to 10 -19 Pa. Analyses were performed on the coupons to determine the depth of the interaction layer and the composition, at each time step (100, 300, and 1000 h). The thickness of the interaction layer on F22 at 550 °C was 25.3 μm, the highest of all the alloys tested, whereas at 650 °C, the layer thickness was only 5.6 μm, the lowest of all the alloys tested. The growth of the interaction layer on F22 at 650 °C was suppressed, owing to the presence of Zr (at 1500 wppm) in the LBE. In the case of 316L, the interaction layers of 4.9 and 10.6 μm were formed at 550 and 650 °C, respectively.

  1. Metallicity of Ca2Cu6P5 with single and double copper-pnictide layers

    DOE PAGESBeta

    Li, Li; Parker, David; Chi, Miaofang; Tsoi, Georgiy M.; Vohra, Yogesh K.; Sefat, Athena S.

    2016-02-16

    Here, we report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca2Cu6P5 and compare with CaCu2-dP2. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP4, similar to Fe–As and Fe–Se layers (with FeAs4, FeSe4) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca2Cu6P5 and CaCu2-δP2 have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K CaCu2-δP2 is slightly off-stoichiometric, with δ = 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large densitymore » of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca2Cu6P5 is only 9 μΩ-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling λ of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu–Cu distance along the c-axis within the double layers can be very short (2.5 Å), even shorter than metallic elemental copper bond (2.56 Å). The value of dρ/dT for CaCu2-δP2 at 300 K is approximately three times larger than in Ca2Cu6P5, which suggests the likelihood of stronger electron-phonon coupling. This study shows that the details of Cu-P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of ‘122’ iron-based materials, despite much structural similarities.« less

  2. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.

    PubMed

    Feigelson, Boris N; Bermudez, Victor M; Hite, Jennifer K; Robinson, Zachary R; Wheeler, Virginia D; Sridhara, Karthik; Hernández, Sandra C

    2015-02-28

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer. PMID:25640166

  3. Long-Term Passivation of Strongly Interacting Metals with Single-Layer Graphene

    PubMed Central

    2015-01-01

    The long-term (>18 months) protection of Ni surfaces against oxidation under atmospheric conditions is demonstrated by coverage with single-layer graphene, formed by chemical vapor deposition. In situ, depth-resolved X-ray photoelectron spectroscopy of various graphene-coated transition metals reveals that a strong graphene–metal interaction is of key importance in achieving this long-term protection. This strong interaction prevents the rapid intercalation of oxidizing species at the graphene–metal interface and thus suppresses oxidation of the substrate surface. Furthermore, the ability of the substrate to locally form a passivating oxide close to defects or damaged regions in the graphene overlayer is critical in plugging these defects and preventing oxidation from proceeding through the bulk of the substrate. We thus provide a clear rationale for understanding the extent to which two-dimensional materials can protect different substrates and highlight the key implications for applications of these materials as barrier layers to prevent oxidation. PMID:26499041

  4. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    NASA Astrophysics Data System (ADS)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  5. Layered graphitic carbon host formation during liquid-free solid state growth of metal pyrophosphates.

    PubMed

    Díaz, Carlos; Valenzuela, María Luisa; Lavayen, Vladimir; O'Dwyer, Colm

    2012-06-01

    We report a successful ligand- and liquid-free solid state route to form metal pyrophosphates within a layered graphitic carbon matrix through a single step approach involving pyrolysis of previously synthesized organometallic derivatives of a cyclotriphosphazene. In this case, we show how single crystal Mn(2)P(2)O(7) can be formed on either the micro- or the nanoscale in the complete absence of solvents or solutions by an efficient combustion process using rationally designed macromolecular trimer precursors, and present evidence and a mechanism for layered graphite host formation. Using in situ Raman spectroscopy, infrared spectroscopy, X-ray diffraction, high resolution electron microscopy, thermogravimetric and differential scanning calorimetric analysis, and near-edge X-ray absorption fine structure examination, we monitor the formation process of a layered, graphitic carbon in the matrix. The identification of thermally and electrically conductive graphitic carbon host formation is important for the further development of this general ligand-free synthetic approach for inorganic nanocrystal growth in the solid state, and can be extended to form a range of transition metals pyrophosphates. For important energy storage applications, the method gives the ability to form oxide and (pyro)phosphates within a conductive, intercalation possible, graphitic carbon as host-guest composites directly on substrates for high rate Li-ion battery and emerging alternative positive electrode materials. PMID:22587306

  6. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

    PubMed Central

    Gupta, Priti; Rahman, A. A.; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R.; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-01-01

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth. PMID:27025461

  7. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

    NASA Astrophysics Data System (ADS)

    Gupta, Priti; Rahman, A. A.; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R.; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-03-01

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

  8. Fifty years of stacking

    NASA Astrophysics Data System (ADS)

    Rashed, Mohamed

    2014-06-01

    Common-Mid-Point (CMP) stacking is a major process to enhance signal-to-noise ratio in seismic data. Since its appearance fifty years ago, CMP stacking has gone through different phases of prosperity and negligence within the geophysical community. During those times, CMP stacking developed from a simple process of averaging into a sophisticated process that involves complicated mathematics and state-of-the-art computation. This article summarizes the basic principles, assumptions, and violations related to the CMP stacking technique, presents a historical overview on the development stages of CMP stacking, and discusses its future potentiality.

  9. Evolution of magnetic layers stacking sequence within the magnetic structure of Ho(CoxNi1-x)2B2C

    NASA Astrophysics Data System (ADS)

    ElMassalami, M.; Takeya, H.; Ouladdiaf, B.; Gomes, A. M.; Paiva, T.; dos Santos, R. R.

    2014-12-01

    We evaluated the influence of Co substitution on the magnetic structure of Ho(CoxNi1-x)2B2C (x=0.2, 0.4, 0.6, 0.8) using neutron diffraction, magnetization and specific heat studies. Different modes are stabilized: an AFM k=(0,0,1) mode for x=0.2, a spiral k=(0,0,0.49) mode for x=0.4, a spiral k=(0,0,0.26) mode for x=0.6, and a FM k=(0,0,0) mode for x=0.8. Recalling that for x=0.0, k=(0,0,1) while for x=1.0, k=(0,0,0), then all these magnetic structures can be visualized as a variation in the stacking sequence, along the z-axis, of the intra-planar FM-coupled Ho sheets as such Co substitution controls the z-component of the k=(0,0,ux) vector where ux=0,0.26,0.49, or 1. We discuss this inference and the observation that in spite of such a diversity of magnetic structures, the critical temperatures and the saturated moments are only weakly influenced by substitution.

  10. Electron Confinement Due to Stacking Control of Atomic Layers in SiC Polytypes: Roles of Floating States and Spontaneous Polarization

    NASA Astrophysics Data System (ADS)

    Matsushita, Yu-ichiro; Furuya, Shinnosuke; Oshiyama, Atsushi

    2014-09-01

    We report on first-principles total-energy electronic-structure calculations that clarify the stability and electronic structures of heterocrystalline superlattices consisting of SiC polytypes. The calculated local density of states unequivocally reveals substantial effects of spontaneous polarization in hexagonal polytypes. The polarization in the hexagonal region renders the band lineup slanted in real space along the stacking direction in the superlattice; furthermore, the counterpolarization in the cubic region makes it slanted in the reverse direction. We find that electrons are confined near the interface in the cubic region and that holes are under a negligible band offset. We also find that the slanted band lineup causes a downward (upward) shift of the conduction (valence) band edge and the band gap becomes narrower than that in the bulk polytype, offsetting the band gap increase due to the quantum confinement. The calculated Kohn-Sham orbitals of the conduction band bottoms distribute not at atomic sites but over interstitial channels in the 3C region, thus showing the floating nature common to sp3-bonded materials. It is found that the penetration of the floating states into the hexagonal region further modifies the band gap.

  11. Atomic layer deposition of metal oxide patterns on nonwoven fiber mats using localized physical compression.

    PubMed

    Sweet, William J; Oldham, Christopher J; Parsons, Gregory N

    2014-06-25

    Patterning is an essential part of many industrial processes from printing to semiconductor manufacturing. In this work, we demonstrate a new method to pattern and selectively coat nonwoven textiles by atomic layer deposition (ALD) using compressive mask patterning. A physical mask combined with mechanical compression allows lateral definition and fidelity of the ALD coating to be controlled. We produce features of several sizes on different nonwoven fiber materials and demonstrate the ability to limit diffusion effects to within <200 μm of the pattern edge. Lateral and vertical penetration of reactive growth species into nonwoven mats is investigated by plan-view and cross-sectional imaging. Vertical growth is also analyzed by imaging coating depth into fiber mat stacks. We develop a fully quantitative transport model that describes well the effect of fiber structure and mechanical compression on the extent of coating under the physical mask. This method could be implemented for high-volume patterning for applications including flexible electronics. PMID:24850237

  12. Role of InxGa1-xAs Layer Composition in Modifying Strain Fields and Carrier Confinement Potentials in a Close-stacked InAs/GaAs Quantum Dot System

    NASA Astrophysics Data System (ADS)

    Lee, Woong; Yoo, Yo-Han; Shin, Hyunho; Myoung, Jae-Min

    2005-05-01

    Role of the composition of InxGa1-xAs strain-relief layer (SRL) in controlling the strain fields and consequent modification of band structures in a close-stacked multi-layer InAs/GaAs quantum dot (QD) system was investigated within the framework of continuum elasticity and model solid theory. It was predicted that strains in the QDs are significantly relieved in proportion to the In concentration in the InxGa1-xAs SRLs between InAs QD and GaAs cap layer. The relaxation of strains caused substantial shift of the conduction band edge in the QDs mainly by the relief of hydrostatic strain component resulting in narrower bandgap within the QDs with increasing In concentration. It is interpreted that such strain relaxation and subsequent band structure modifications are responsible for the experimentally observed redshift of photo-luminescence (PL) spectra elsewhere. Therefore, together with existing experimental work, it is confirmed that conduction band edges of QD systems can be tailored by the control of the SRL composition allowing more flexibility in bandgap engineering.

  13. Wearable solar cells by stacking textile electrodes.

    PubMed

    Pan, Shaowu; Yang, Zhibin; Chen, Peining; Deng, Jue; Li, Houpu; Peng, Huisheng

    2014-06-10

    A new and general method to produce flexible, wearable dye-sensitized solar cell (DSC) textiles by the stacking of two textile electrodes has been developed. A metal-textile electrode that was made from micrometer-sized metal wires was used as a working electrode, while the textile counter electrode was woven from highly aligned carbon nanotube fibers with high mechanical strengths and electrical conductivities. The resulting DSC textile exhibited a high energy conversion efficiency that was well maintained under bending. Compared with the woven DSC textiles that are based on wire-shaped devices, this stacked DSC textile unexpectedly exhibited a unique deformation from a rectangle to a parallelogram, which is highly desired in portable electronics. This lightweight and wearable stacked DSC textile is superior to conventional planar DSCs because the energy conversion efficiency of the stacked DSC textile was independent of the angle of incident light. PMID:24789065

  14. Shift and elimination of microwave Fabry-Perot resonances in a dielectric covered with a thin metal layer

    NASA Astrophysics Data System (ADS)

    Ragulis, Paulius; Simniškis, Rimantas; Kancleris, Žilvinas

    2015-04-01

    In this paper, we consider a plane electromagnetic wave incident onto a dielectric plate, which has one surface covered with a thin layer of metal. An oblique incident angle was considered for the TE (s polarization in optic) and TM (p polarization) plane waves. The thin metal layer is treated as an infinitesimal thickness. It was characterized by a surface conductivity and accounted for by a tangential magnetic field component step induced by the current flow in the metal layer. Compact expressions, which describe the reflection, transmission and absorption in a dielectric plate covered with a thin layer of metal, have been obtained. It was shown that by choosing the appropriate surface conductivity, the Fabry-Perot transmission resonances can be shifted to the position where the maximum reflection is observed in the case of an uncovered dielectric. On the other hand, the elimination of the Fabry-Perot resonances can be also achieved by choosing a proper metal surface conductivity. Measurements of the reflection from the glass covered with a thin layer of metal have been performed in a wide microwave frequency range (2-12 GHz) revealing a large difference in the measured reflection coefficient from the dielectric and metalized surfaces. The measured results fit well with those calculated by employing analytical expressions obtained in this paper.

  15. Deposition temperature dependence of material and Si surface passivation properties of O{sub 3}-based atomic layer deposited Al{sub 2}O{sub 3}-based films and stacks

    SciTech Connect

    Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

    2014-01-15

    The material composition and the Si surface passivation of aluminum oxide (Al{sub 2}O{sub 3}) films prepared by atomic layer deposition using Al(CH{sub 3}){sub 3} and O{sub 3} as precursors were investigated for deposition temperatures (T{sub Dep}) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H] < 0.5 at. % at 400 °C and 500 °C. The surface passivation performance was investigated after annealing at 300 °C–450 °C and also after firing steps in the typical temperature range of 800 °C–925 °C. A similar high level of the surface passivation performance, i.e., surface recombination velocity values <10 cm/s, was obtained after annealing and firing. Investigations of Al{sub 2}O{sub 3}/SiN{sub x} stacks complemented the work and revealed similar levels of surface passivation as single-layer Al{sub 2}O{sub 3} films, both for the chemical and field-effect passivation. The fixed charge density in the Al{sub 2}O{sub 3}/SiN{sub x} stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10{sup 12} cm{sup −2} to 3·10{sup 11} cm{sup −2} when T{sub Dep} was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T{sub Dep}. When firing films prepared at of low T{sub Dep}, blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al{sub 2}O{sub 3}-based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen.

  16. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  17. Stacking with stochastic cooling

    NASA Astrophysics Data System (ADS)

    Caspers, Fritz; Möhl, Dieter

    2004-10-01

    Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 105 the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some considerations to the 'azimuthal' schemes.

  18. Self-Supporting Metal-Organic Layers as Single-Site Solid Catalysts.

    PubMed

    Cao, Lingyun; Lin, Zekai; Peng, Fei; Wang, Weiwei; Huang, Ruiyun; Wang, Cheng; Yan, Jiawei; Liang, Jie; Zhang, Zhiming; Zhang, Teng; Long, Lasheng; Sun, Junliang; Lin, Wenbin

    2016-04-11

    Metal-organic layers (MOLs) represent an emerging class of tunable and functionalizable two-dimensional materials. In this work, the scalable solvothermal synthesis of self-supporting MOLs composed of [Hf6 O4 (OH)4 (HCO2 )6 ] secondary building units (SBUs) and benzene-1,3,5-tribenzoate (BTB) bridging ligands is reported. The MOL structures were directly imaged by TEM and AFM, and doped with 4'-(4-benzoate)-(2,2',2''-terpyridine)-5,5''-dicarboxylate (TPY) before being coordinated with iron centers to afford highly active and reusable single-site solid catalysts for the hydrosilylation of terminal olefins. MOL-based heterogeneous catalysts are free from the diffusional constraints placed on all known porous solid catalysts, including metal-organic frameworks. This work uncovers an entirely new strategy for designing single-site solid catalysts and opens the door to a new class of two-dimensional coordination materials with molecular functionalities. PMID:26954885

  19. Double-layered metal grating for high-performance refractive index sensing.

    PubMed

    Li, Guozhen; Shen, Yang; Xiao, Guohui; Jin, Chongjun

    2015-04-01

    The detection of minuscule changes in the local refractive index by localized surface plasmon resonances (LSPRs), carried by metal nanostructures, has been used successfully in applications such as real-time and label-free detection of molecular binding events. However, localized plasmons demonstrate 1-2 orders of magnitude lower figure of merit (FOM) compared with their propagating counterparts. Here, we propose and experimentally demonstrate a high-performance refractive index sensor based on a structure of double-layered metal grating (DMG) with an FOM and FOM* reaching 38 and 40 respectively under normal incidence. Such a high FOM and FOM* arise from a result of a sharp fano resonance, which is caused by the coherent interference between the LSPR from the individual top gold stripes and Wood's anomaly (WA). Moreover, a small conformal decay length of ~68 nm is determined in DMG, indicating that the DMG is a promising candidate for label-free biomedical sensing. PMID:25968735

  20. Evidence of photo-induced dynamic competition of metallic and insulating phase in a layered manganite

    SciTech Connect

    Li, Yuelin; Walko, Daonld A.; Li, Qing'an; Liu, Yaohua; Rosenkranz, Stephen; Zheng, Hong; Mitchell, J. F.

    2015-11-17

    We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr2Mn2O7, can be manipulated using ultrafast optical excitation. The time-dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario whereby the laser excitation modulates the local competition between the metallic and the insulating phases.