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Sample records for synthetic sapphire crystal

  1. Sapphire shaped crystals for medicine

    NASA Astrophysics Data System (ADS)

    Shikunova, A.; Kurlov, V. N.

    2016-01-01

    The favorable combination of excellent optical and mechanical properties of sapphire makes it an attractive structural material for medicine. We have developed a new kind of medical instruments and devices for laser photodynamic and thermal therapy, laser surgery, fluorescent diagnostics, and cryosurgery based on sapphire crystals of various shapes with capillary channels in their volume.

  2. Morphological stability of sapphire crystallization front

    NASA Astrophysics Data System (ADS)

    Baranov, V. V.; Nizhankovskyi, S. V.

    2016-03-01

    The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal-melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.

  3. Single Crystal Sapphire Optical Fiber Sensor Instrumentation

    SciTech Connect

    Anbo Wang; Russell May; Gary R. Pickrell

    2000-10-28

    The goal of this 30 month program is to develop reliable accurate temperature sensors based on single crystal sapphire materials that can withstand the temperatures and corrosive agents present within the gasifier environment. The research for this reporting period has been segregated into two parallel paths--corrosion resistance measurements for single crystal sapphire fibers and investigation of single crystal sapphire sensor configurations. The ultimate goal of this phase one segment is to design, develop and demonstrate on a laboratory scale a suitable temperature measurement device that can be field tested in phase two of the program.

  4. Submicron diameter single crystal sapphire optical fiber

    SciTech Connect

    Hill, Cary; Homa, Daniel; Liu, Bo; Yu, Zhihao; Wang, Anbo; Pickrell, Gary

    2014-10-02

    In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3 µm/hr were achievable with a 3:1 molar ratio sulfuric-phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800 nm was successfully fabricated from a commercially available fiber with an original diameter of 50 µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers is the first step in achieving optical and sensing performance on par with its fused silica counterpart.

  5. Submicron diameter single crystal sapphire optical fiber

    DOE PAGESBeta

    Hill, Cary; Homa, Daniel; Liu, Bo; Yu, Zhihao; Wang, Anbo; Pickrell, Gary

    2014-10-02

    In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3 µm/hr were achievable with a 3:1 molar ratio sulfuric-phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800 nm was successfully fabricated from a commercially available fiber with an original diameter of 50 µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers ismore » the first step in achieving optical and sensing performance on par with its fused silica counterpart.« less

  6. Anisotropy of sapphire single crystal sputtering

    SciTech Connect

    Minnebaev, K. F.; Tolpin, K. A.; Yurasova, V. E.

    2015-08-15

    We have studied the spatial distribution of particles sputtered from the base (0001) plane of a sapphire single crystal with trigonal crystalline lattice (α-Al{sub 2}O{sub 3}) that can be considered a superposition of two hexagonal close packed (hcp) structures–the ideal sublattice of oxygen and a somewhat deformed sublattice of aluminum. It is established that the particles sputtered from the base plane of sapphire are predominantly deposited along the sides of an irregular hexagon with spots at its vertices. The patterns of spots have been also studied for sputtering of particles from the (0001) face of a zinc single crystal with the hcp lattice. The spots of sputtered Zn atoms are arranged at the vertices of concentric equilateral hexagons. In both cases, the observed anisotropy of sputtering is related to focused collisions (direct and assisted focusing) and the channeling process. The chemical composition of spots has been determined in various regions of sputtered sapphire deposition. The results are discussed in comparison to analogous earlier data for secondary ion emission from an α-Al{sub 2}O{sub 3} single crystal.

  7. Laser induced damage of sapphire and titanium doped sapphire crystals under femtosecond to nanosecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Bussière, B.; Utéza, O.; Sanner, N.; Sentis, M.; Riboulet, G.; Vigroux, L.; Commandré, M.; Wagner, F.; Natoli, J.-Y.; Chambaret, J.-P.

    2009-10-01

    The use of large Ti:Sapphire crystals in ultra fast high peak power laser amplifiers makes crucial the problem of crystal laser induced damage. These works aim to quantify the laser induced damage threshold (LIDT) of Sapphire and Ti:Sapphire crystals under femtosecond, picosecond and nanosecond laser pulse irradiations, which are typically encountered in such laser chains. Furthermore, a study of the influence of cryogenic conditions on the LIDT of Ti:Sapphire crystals and of their anti-reflection coating has been performed. The results are important to understand the mechanisms leading to the damage, and to reveal the key parameters which will have to be optimized in future high peak power laser chains.

  8. Study of the crystal structure of silicon nanoislands on sapphire

    SciTech Connect

    Krivulin, N. O. Pirogov, A. V.; Pavlov, D. A.; Bobrov, A. I.

    2015-02-15

    The results of studies of the crystal structure of silicon nanoislands on sapphire are reported. It is shown that the principal defects in silicon nanoislands on sapphire are twinning defects. As a result of the formation of such defects, different crystallographic orientations are formed in silicon nanoislands on sapphire. In the initial stages of the molecular-beam epitaxy of silicon on sapphire, there are two basic orientations: the (001) orientation parallel to the surface and the (001) orientation at an angle of 70° to the surface.

  9. Liquid-crystal tunable filter based on sapphire microspheres.

    PubMed

    Gilardi, Giovanni; Donisi, Domenico; Serpengüzel, Ali; Beccherelli, Romeo

    2009-11-01

    We design an integrated optoelectronic device based on the whispering-gallery modes of a sapphire microsphere integrated with a liquid-crystal tuning medium to produce a narrowband, electrically tunable, channel-dropping filter. The sapphire microsphere is glued over a diffused waveguide in a glass substrate. At the base of the microsphere, a small volume of liquid crystal is infiltrated. We numerically evaluate the performance of the device and demonstrate a voltage tuning of the narrowband resonances. PMID:19881558

  10. Numerical analysis of sapphire crystal growth by the Kyropoulos technique

    NASA Astrophysics Data System (ADS)

    Demina, S. E.; Bystrova, E. N.; Lukanina, M. A.; Mamedov, V. M.; Yuferev, V. S.; Eskov, E. V.; Nikolenko, M. V.; Postolov, V. S.; Kalaev, V. V.

    2007-09-01

    A numerical model has been suggested to analyze processes occurring during sapphire crystal growth by the Kyropoulos technique. The model accounts for the radiative heat exchange in the crystal and melt convection together with the crystallization front formation. The theoretical predictions agree well with available experimental data.

  11. A peek into the history of sapphire crystal growth

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  12. Crystal orientation dependence of polarized infrared reflectance response of hexagonal sapphire crystal

    NASA Astrophysics Data System (ADS)

    Lee, S. C.; Ng, S. S.; Abu Hassan, H.; Hassan, Z.; Dumelow, T.

    2014-11-01

    Polarized infrared (IR) reflectance responses of c-, a- and r-plane sapphire crystals were investigated. The sapphire crystals with differently oriented surfaces exhibited different reststrahlen features. Except for c-plane sapphire, the polarized IR reflectance responses were sensitive to the orientation of the samples. The spectral features for a- and r-plane sapphire crystals were modulated by just rotating the samples about their surface normal. To analyze the observations, a theoretical model for the polarized IR reflectivity that considers the effects of crystal orientation of a hexagonal crystal system was employed. Overall, the theoretical predictions were in good agreement with experimental data. The crystal orientation information deduced from the polarized IR reflectance spectra is consistent with that acquired from X-ray diffraction measurements.

  13. Modal reduction in single crystal sapphire optical fiber

    NASA Astrophysics Data System (ADS)

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2015-10-01

    A type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high- and low-index regions in the azimuthal direction. The structure retains a "core" region of pure single crystal (SC) sapphire in the center of the fiber and a "cladding" region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying the effective core diameter and the dimensions of the "windmill"-shaped cladding. The simulation results showed that the number of guided modes was significantly reduced in the windmill fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the windmill SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.

  14. Modal reduction in single crystal sapphire optical fiber

    SciTech Connect

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2015-10-12

    A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying the effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.

  15. Modal reduction in single crystal sapphire optical fiber

    DOE PAGESBeta

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2015-10-12

    A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying themore » effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.« less

  16. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    SciTech Connect

    Pickrell, Gary; Scott, Brian; Wang, Anbo; Yu, Zhihao

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  17. Polarized infrared attenuated total reflection study of sapphire crystals with different crystallographic planes

    NASA Astrophysics Data System (ADS)

    Lee, S. C.; Ng, S. S.; Hassan, H. Abu; Dumelow, T.

    2015-04-01

    Polarized infrared (IR) attenuated total reflection (ATR) measurements were performed on c- (polar) and r-plane (semi-polar) sapphire crystals. For c-plane sapphire crystal, spectral features due to the surface phonon polariton (SPhP) modes are only observable in the p-polarized ATR spectrum. Calculation of the SPhP dispersion spectra revealed that the SPhP modes of r-plane sapphire crystal are possible to be observed in both the s- and p-polarized ATR spectra. ATR measurements verified that excitation of the SPhP modes are still easier in the p-polarized ATR spectra. Taking into account the effects of anisotropy and the crystal orientation of hexagonal crystal system, the ATR spectra of r-plane sapphire crystal with arbitrary orientations were simulated. Through a best fit of experimental with simulated spectra, information about the crystal orientation of sapphire crystals was deduced.

  18. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    SciTech Connect

    A. Wang; G. Pickrell; R. May

    2002-09-10

    Accurate measurement of temperature is essential for the safe and efficient operation and control of a wide range of industrial processes. Appropriate techniques and instrumentation are needed depending on the temperature measurement requirements in different industrial processes and working environments. Harsh environments are common in many industrial applications. These harsh environments may involve extreme physical conditions, such as high-temperature, high-pressure, corrosive agents, toxicity, strong electromagnetic interference, and high-energy radiation exposure. Due to these severe environmental conditions, conventional temperature sensors are often difficult to apply. This situation has opened a new but challenging opportunity for the sensor society to provide robust, high-performance, and cost-effective temperature sensors capable of operating in those harsh environments. The focus of this research program has been to develop a temperature measurement system for temperature measurements in the primary and secondary stages of slagging gasifiers. For this application the temperature measurement system must be able to withstand the extremely harsh environment posed by the high temperatures and corrosive agents present in these systems. Real-time, accurate and reliable monitoring of temperature for the coal gasification process is important to realize the full economic potential of these gasification systems. Long life and stability of operation in the high temperature environment is essential for the temperature measurement system to ensure the continuous running of the coal gasification system over the long term. In this high temperature and chemically corrosive environment, rather limited high temperature measurement techniques such as high temperature thermocouples and optical/acoustic pyrometers are available, each with their own limitations. In this research program, five different temperature sensing schemes based on the single crystal sapphire

  19. Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process

    NASA Astrophysics Data System (ADS)

    Chen, Chun-Hung; Chen, Jyh-Chen; Lu, Chung-Wei; Liu, Che-Ming

    2012-08-01

    The Kyropoulos (KY) method is commonly used to grow large sized sapphire single crystals. The shape of the sapphire crystal thus grown is determined by the heater arrangement and the power reduction history in the Kyropoulos furnace. In order to grow high-quality sapphire single crystal, the heater arrangement should allow different power inputs in different sections in order to control the thermal field in the melt during the growth process. In this study, a numerical computation is performed to investigate the effects of the heater arrangement on the thermal and flow transport, the shape of the crystal-melt interface, and the power requirements during the Kyropoulos sapphire crystal growth process in a resistance heated furnace. Four different power ratio arrangements in a three-zone heater are considered. The results show that for the power arrangements considered herein, the temperature gradients along the crystallization front do not exceed 0.05 K/mm, and that, after the growth of the crown, the crystal maintains an almost constant diameter. The remelting phenomenon may occur during growth when the input power of the upper side of the heater is higher than that of the lower side of the heater.

  20. Growth of sapphire crystals for optoelectronics from alumina in a protective medium

    NASA Astrophysics Data System (ADS)

    Dan'ko, A. Ja.; Nizhankovskiy, S. V.; Puzikov, V. M.; Grin', L. A.; Sidelnikova, N. S.; Adonkin, G. T.; Kanishchev, V. N.

    2008-12-01

    This paper reports on the results obtained during the development of the technological process of growth of sapphire crystals for optoelectronics through horizontal directional crystallization in a gaseous argon medium at a pressure of 800 mmHg. The sapphire crystals intended for the use in optoelectronics have been grown from purified molten alumina according to the authors’ technology. It has been demonstrated that, under conditions of a high temperature gradient across the crystallization front and at a low content of reducing components (H2, CO) in the growth medium, it is possible to grow sapphire crystals satisfying the requirements of optoelectronics.

  1. Study on crystal-melt interface shape of sapphire crystal growth by the KY method

    NASA Astrophysics Data System (ADS)

    Liu, Weina; Lu, Jijun; Chen, Hongjian; Yan, Wenbo; Min, Chunhua; Lian, Qingqing; Wang, Yunman; Cheng, Peng; Liu, Caichi; Xu, Yongliang

    2015-12-01

    In this article, the influence of the flow field structure and temperature gradient of forefront interface on the shape of crystal-melt interface which may reflect the interface stability were analyzed through the method of numerical simulation by using CGSim software. In order to get a suitable interface shape and grow high-quality sapphire crystal, the heater arrangement should be adjusted during the KY process. The results indicate that the effect of Marangoni convection cannot be neglected at the last stage, the crystal-melt interface is governed by the flow field structure and the temperature gradient in melt at the crystal-melt interface. The phenomenon of shoulder concave appears at the stage of shoulder turning and interface inversion appears at the last stage during the crystal growth is discussed. Adjusting heater arrangement may effectively optimize the shape of crystal-melt interface.

  2. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    NASA Astrophysics Data System (ADS)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  3. High temperature sensing using higher-order-mode rejected sapphire-crystal fiber gratings

    NASA Astrophysics Data System (ADS)

    Zhan, Chun; Kim, Jae Hun; Lee, Jon; Yin, Stuart; Ruffin, Paul; Luo, Claire

    2007-09-01

    In this paper, we report the fabrication of higher-order-mode rejected fiber Bragg gratings (FBGs) in sapphire crystal fiber using infrared (IR) femtosecond laser illumination. The grating is tested in high temperature furnace up to 1600 degree Celsius. As sapphire fiber is only available as highly multimode fiber, a scheme to filter out higher order modes in favor for the fundamental mode is theoretically evaluated and experimentally demonstrated. The approach is to use an ultra thin sapphire crystal fiber (60 micron in diameter) to decrease the number of modes. The small diameter fiber also enables bending the fiber to certain radius which is carefully chosen to provide low loss for the fundamental mode LP01 and high loss for the other high-order modes. After bending, less-than-2-nm resonant peak bandwidth is achieved. The grating spectrum is improved, and higher resolution sensing measurement can be achieved. This mode filtering method is very easy to implement. Furthermore, the sapphire fiber is sealed with hi-purity alumina ceramic cement inside a flexible high temperature titanium tube, and the highly flexible titanium tube offers a robust packaging to sapphire fiber. Our high temperature sapphire grating sensor is very promising in extremely high temperature sensing application.

  4. Synthetic thermoelectric materials comprising phononic crystals

    SciTech Connect

    El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

    2013-08-13

    Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

  5. Low phase-noise sapphire crystal microwave oscillators: current status.

    PubMed

    Ivanov, Eugene N; Tobar, Michael E

    2009-02-01

    This work demonstrates that ultra-low phase-noise oscillators with a single-sideband phase-noise spectral density approaching -160 dBc/Hz at Fourier frequency of 1 kHz can be constructed at microwave frequencies (8 to 10 GHz). Such noise performance has been achieved by frequency locking a conventional loop oscillator to a temperature-stabilized sapphire dielectric resonator operating at a relatively high level of dissipated microwave power (approximately 0.5 W). Principles of microwave circuit interferometry have been employed to generate the error signal for the oscillator frequency control system. No cryogens were used. Two almost identical oscillators were built to perform the classical 2-oscillator phase noise measurements. The phase referencing of one oscillator to another was achieved by varying microwave power dissipated in the sapphire resonator. PMID:19251513

  6. Broadband and high-brightness light source: glass-clad Ti:sapphire crystal fiber.

    PubMed

    Wang, Shih-Chang; Yang, Teng-I; Jheng, Dong-Yo; Hsu, Chun-Yang; Yang, Tzu-Te; Ho, Tuan-Shu; Huang, Sheng-Lung

    2015-12-01

    High-brightness near-infrared broadband amplified spontaneous emission (ASE) was generated by glass-clad Ti:sapphire crystal fibers, which were developed using the co-drawing laser-heated pedestal growth method. As much as 29.2 mW of ASE power was generated using 520 nm laser diodes as the excitation source on an a-cut, 18 μm core-diameter Ti:sapphire crystal fiber (CF). The 3 dB bandwidth was 163.8 nm, and the radiance was 53.94  W·mm(-2) sr(-1). The propagation loss of the glass-clad sapphire CF measured using the cutback method was 0.017  cm(-1) at 780 nm. For single-mode applications, more than 100 μW of power was coupled into a SM600 single-mode fiber. PMID:26625059

  7. Properties Data for Adhesion and Surface Chemistry of Aluminum: Sapphire-Aluminum, Single-Crystal Couple

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Pohlchuck, Bobby; Whitle, Neville C.; Hector, Louis G., Jr.; Adams, Jim

    1998-01-01

    An investigation was conducted to examine the adhesion and surface chemistry of single-crystal aluminum in contact with single-crystal sapphire (alumina). Pull-off force (adhesion) measurements were conducted under loads of 0. I to I mN in a vacuum of 10(exp -1) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) at room temperature. An Auger electron spectroscopy analyzer incorporated directly into an adhesion-measuring vacuum system was primarily used to define the chemical nature of the surfaces before and after adhesion measurements. The surfaces were cleaned by argon ion sputtering. With a clean aluminum-clean -sapphire couple the mean value and standard deviation of pull-off forces required to separate the surfaces were 3015 and 298 micro-N, respectively. With a contaminated aluminum-clean sapphire couple these values were 231 and 241 micro-N. The presence of a contaminant film on the aluminum surface reduced adhesion by a factor of 13. Therefore, surfaces cleanliness, particularly aluminum cleanliness, played an important role in the adhesion of the aluminum-sapphire couples. Pressures on the order of 10(exp -8) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) maintained a clean aluminum surface for only a short time (less then 1 hr) but maintained a clean sapphire surface, once it was achieved, for a much longer time.

  8. Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

    SciTech Connect

    Vetrov, V. N. Ignatenkov, B. A.

    2013-05-15

    The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

  9. Design and analysis of large-core single-mode windmill single crystal sapphire optical fiber

    NASA Astrophysics Data System (ADS)

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2016-06-01

    We present a large-core single-mode "windmill" single crystal sapphire optical fiber (SCSF) design, which exhibits single-mode operation by stripping off the higher-order modes (HOMs) while maintaining the fundamental mode. The "windmill" SCSF design was analyzed using the finite element analysis method, in which all the HOMs are leaky. The numerical simulation results show single-mode operation in the spectral range from 0.4 to 2 μm in the windmill SCSF, with an effective core diameter as large as 14 μm. Such fiber is expected to improve the performance of many of the current sapphire fiber optic sensor structures.

  10. Single-crystal sapphire tubes as economical probes for optical pyrometry in harsh environments

    SciTech Connect

    Ruzicka, Jakub; Houzvicka, Jindrich; Bok, Jiri; Praus, Petr; Mojzes, Peter

    2011-12-20

    One-end-sealed single-crystal sapphire tubes are presented as a simple, robust, and economical alternative for bulky lightpipe probes. Thermal radiation from a blackbody cavity created at the inner surface of the sealed end is gathered by a simple lens-based collecting system and transmitted via optical fiber to the remote detection unit. Simplicity and applicability of the concept are demonstrated by the combination of commercially available sapphire tubes with a common optical pyrometer. Radiation thermometers with sapphire tubes as invasive probes can be useful for applications requiring immunity to electromagnetic interference, resistance to harsh environments, simple replacement in the case of failure, and enhanced mechanical firmness, enabling wider range probe positioning inside the medium of interest.

  11. Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

    NASA Astrophysics Data System (ADS)

    Demina, S. E.; Bystrova, E. N.; Postolov, V. S.; Eskov, E. V.; Nikolenko, M. V.; Marshanin, D. A.; Yuferev, V. S.; Kalaev, V. V.

    2008-04-01

    In the present work, an advanced numerical model is suggested to analyze heat transfer and flow pattern in sapphire crystal growth by the Kyropoulos technique. The new approach accounts for radiative heat exchange in the crystal and convection in the melt, and provides prediction of the crystallization front shape. The model allowed the analysis of several growth setup designs and selection of an optimal configuration. The numerical predictions performed with the CGSim software ( www.semitech.us) agree well with available experimental data obtained in optimized crystal growth process reported for the first time.

  12. A century of sapphire crystal growth: origin of the EFG method

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  13. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    NASA Technical Reports Server (NTRS)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  14. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    NASA Astrophysics Data System (ADS)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  15. 3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth

    NASA Astrophysics Data System (ADS)

    Demina, S. E.; Kalaev, V. V.

    2011-04-01

    In the present work, 3D features of melt convection during sapphire growth of 100 mm diameter Cz and of 200 mm diameter Ky crystals are studied. The approach accounting for radiative heat exchange with absorption and a specular reflection in the crystal, which we applied in 2D modeling [1-3], has been extended to 3D computational domains and coupled to 3D heat transfer in the melt, crystal, and crucible. 3D melt unsteady convection together with crystallization front formation are taken into account within the Direct Numerical Simulation (DNS) approach. Results of 3D modeling are discussed in detail and quantitatively compared to the previously reported data of 2D modeling and experiments [2,3]. It has been found that the features of unsteady melt convection during the "before seeding", "seeding", and "shouldering" growth stages are quite different from each other, which necessitates a flexible control of the radial and vertical temperature gradients in the crucible to provide optimal conditions for stable growth of high quality sapphire crystals.

  16. Design and analysis of large-core single-mode windmill single crystal sapphire optical fiber

    DOE PAGESBeta

    Cheng, Yujie; Hill, Cary; Liu, Bo; Yu, Zhihao; Xuan, Haifeng; Homa, Daniel; Wang, Anbo; Pickrell, Gary

    2016-06-01

    We present a large-core single-mode “windmill” single crystal sapphire optical fiber (SCSF) design, which exhibits single-mode operation by stripping off the higher-order modes (HOMs) while maintaining the fundamental mode. The “windmill” SCSF design was analyzed using the finite element analysis method, in which all the HOMs are leaky. The numerical simulation results show single-mode operation in the spectral range from 0.4 to 2 μm in the windmill SCSF, with an effective core diameter as large as 14 μm. Such fiber is expected to improve the performance of many of the current sapphire fiber optic sensor structures.

  17. Intense THz source based on BNA organic crystal pumped at Ti:sapphire wavelength

    NASA Astrophysics Data System (ADS)

    Shalaby, Mostafa; Vicario, Carlo; Thirupugalmani, Karunanithi; Brahadeeswaran, Srinivasan; Hauri, Christoph P.

    2016-04-01

    We report on high energy terahertz pulses by optical rectification (OR) in the organic crystal N-benzyl-2-methyl-4-nitroaniline (BNA) directly pumped by a conventional Ti:Sapphire (Ti:Sa) amplifier. The simple scheme provides an optical to terahertz conversion efficiency of 0.25% when pumped by a collimated laser pulses with duration of 50 fs and central wavelength of 800nm. The generated radiation spans frequencies between 0.2 and 3 THz. We measured the damage threshold as well as the dependency of the conversion efficiency on the pump fluence, pump wavelength, and pulse duration.

  18. Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

    DOE PAGESBeta

    Asadchikov, Victor E.; Butashin, Andrey V.; Buzmakov, Alexey V.; Deryabin, Alexander N.; Kanevsky, Vladimir M.; Prokhorov, Igor A.; Roshchin, Boris S.; Volkov, Yuri O.; Zolotov, Dennis A.; Jafari, Atefeh; et al

    2016-03-22

    We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation densitymore » is observed, though growth rate is not the only parameter impacting the quality.« less

  19. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    NASA Astrophysics Data System (ADS)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  20. Thermal conductivity of synthetic garnet laser crystals

    NASA Astrophysics Data System (ADS)

    Wang, B. S.; Jiang, H. H.; Zhang, Q. L.; Yin, S. T.

    2007-07-01

    The thermal conductivities of nine different synthetic garnet laser crystals at various temperatures, range from 273 to 393K have been investigated by instantaneous measurement method. The results show that the thermal conductivity of each crystal decreases exponentially with the temperature increasing. It is notable that, different host crystals, such as YAG, GGG, and GSGG have different thermal conductivity, which is attributed to the crucial influence of crystal structure and composition on the absolute value of their thermal conductivity. Moreover, with respect to the same host crystals, the impurity scattering also results in the change of their thermal conductivities. This is because that a higher concentration of doped ions leads to a more phonon scattering modes, which results in a shorter mean free path of the phonons and a lower thermal conductivity. In addition, different host crystals have various dependences of thermal conductivity on dopant concentration. This works provides reliable and useful information for designing high power, high quality, and high stability laser devices.

  1. An ESR Investigation of Synthetic Pyrite Crystals

    NASA Astrophysics Data System (ADS)

    Siebert, D.; Dahlem, J.; Fiechter, S.; Hartmann, A.

    1989-01-01

    Synthetic pyrite crystals doped with halogen (CI, Br) or manganese (Mn) were investigated by ESR at 78 K with an X-band spectrometer and a TE102 cavity with 100 kc field modulation. The crystals were preferably measured with the directions <100>, <110>, and <111> parallel to the static magnetic field HO. The ESR spectrum of Mn-doped crystals showed a sextet which can be explained by a spin-Hamiltonian for an electron spin S = 1/2 in interaction with the nuclear spin I = 5/2 of the Mn nucleus for axial symmetry. Due to the observed spin and due to the orientation of the paramagnetic centers the spectra were assigned to Mn2+ in the low spin state which resides on cation site in the FeS2, lattice. In halogen-doped crystals four pairs of lines can be interpreted by the interaction of the two isotopes of I = 3/2, 79Br, 81Br and 35Cl, 37Cl, respectively, with an electron spin S = 1/2. According to the observed symmetry of the ESR signals the paramagnetic centers can be explained as (S-X)2- radicals (X = CI, Br) which substitute for the (S2)2- dumb-bells of pyrite. All crystals evoked extremely narrow ESR lines, especially the halogen-doped crystals with linewidths down to 0.03 mT. Excellent agreement between measured and calculated spectra up to the finest details has been obtained.

  2. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    NASA Astrophysics Data System (ADS)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  3. Mid-infrared silicon-on-sapphire waveguide coupled photonic crystal microcavities

    SciTech Connect

    Zou, Yi E-mail: swapnajit.chakravarty@omegaoptics.com Chen, Ray T. E-mail: swapnajit.chakravarty@omegaoptics.com; Chakravarty, Swapnajit E-mail: swapnajit.chakravarty@omegaoptics.com

    2015-08-24

    We experimentally demonstrate a photonic crystal (PC) microcavity side coupled to a W1.05 photonic crystal waveguide fabricated in silicon-on-sapphire working in mid-IR regime at 3.43 μm. Using a fixed wavelength laser source, propagation characteristics of PC waveguides without microcavity are characterized as a function of lattice constant to determine the light line position, stop gap, and guided mode transmission behavior. The resonance of an L21 PC microcavity coupled to the W1.05 PCW in the guided mode transmission region is then measured by thermal tuning of the cavity resonance across the source wavelength. Resonance quality factor ∼3500 is measured from the temperature dependency curve.

  4. Laser-diode pumped glass-clad Ti:sapphire crystal fiber laser.

    PubMed

    Wang, Shih-Chang; Hsu, Chun-Yang; Yang, Tzu-Te; Jheng, Dong-Yo; Yang, Teng-I; Ho, Tuan-Shu; Huang, Sheng-Lung

    2016-07-15

    Efficient glass-clad crystal fiber (CF) lasers were demonstrated using a Ti:sapphire crystalline core as the gain medium. With a core diameter of 18 μm, the laser diode (LD) pump source can be effectively coupled and guided throughout the crystal fiber for a low threshold and high slope efficiency laser operation. The advantage of high heat dissipation efficiency of the fiber structure can be derived from the low core temperature rising measurement (i.e., 17 K/W) with passive cooling. At an output transmittance of 23%, the lowest absorbed threshold of 118.2 mW and highest slope efficiency of 29.6% were achieved, with linear laser polarization. PMID:27420499

  5. Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates.

    PubMed

    Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang

    2015-06-23

    Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials. PMID:25961515

  6. Complete characterization of damage threshold in titanium doped sapphire crystals with nanosecond, picosecond, and femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Canova, F.; Chambaret, J.-P.; Mourou, G.; Sentis, M.; Uteza, O.; Delaporte, P.; Itina, T.; Natoli, J.-Y.; Commandre, M.; Amra, C.

    2005-12-01

    The major bottleneck for the development of robust and cost-effective femtosecond amplification systems is the uncertainty concerning the damage threshold of Ti: Sapphire crystals. Up to now, Ti: Sapphire is the only material that supports the generation of temporally short pulses (few femtosecond) at high repetition rates, and overcoming this bottleneck will represent a major advance in laser performance for all the femtosecond community. Currently, when pumped at 532nm, the uncertainty on Ti:Sapphire damage threshold, is about a factor of ten. The empirically estimated threshold is 10J/cm2 but for safety reasons the femtosecond laser community (especially the companies producing the lasers) uses the conservative value of 1J/cm2. Such a low pumping fluency means low extraction efficiency during the amplification process and a great waste of pumping energy, the most expensive part of a Ti:Sapphire amplifier. In order to remove this bottleneck, we launch a complete analysis of all the factors that influence the damage threshold in Ti:Sapphire Crystals. Our program is to first measure the bulk threshold to define the upper threshold limit, and the influence of Ti ion concentration in the crystal garnet. Then, we will analyze all the surface effects that influence the value of the threshold. These effects depend on the polishing, on the cleaning process, as well as the type of anti-reflective coating. Only a complete understanding of all the mechanisms involved in threshold limitation will allow us to produce Ti:Sa crystals with the best performances. The study of the characteristics of the Ti:Sapphire damage threshold will not be complete and reliable without a complete characterization of the pump beams (temporal and spatial modulations), and this analysis will be done with nanosecond and picosecond pulses at 532nm. Finally, to complete the exploration of the the behavior of the titanium doped sapphire crystal, we will characterize the damage threshold with

  7. Characterization of AFB sapphire single crystal composites for infrared window application

    NASA Astrophysics Data System (ADS)

    Lee, H.-C.; Meissner, H. E.

    2007-04-01

    Next generation weapons platforms may require 30" x 30" sapphire windows. Since these sizes exceed what can be manufactured directly, a concept is proposed and experimental data are furnished in this report on the viability of increasing the window dimensions by Adhesive-Free-Bonding (AFB®) of smaller starting components by their edges. The bonding scheme has been evaluated for single crystal sapphire but is expected to also work equally well for other IR window materials. The bonding mechanism is explained with Van der Waals theory of attractive forces and confirmed experimentally by applying the bending plate theory. The gap at the interface between two components is deduced from the measured roughness of the polished surfaces that are brought into optical contact and subsequently heat-treated, and is estimated to be about 2 Å rms. Stress relief at AFB® interfaces has been established. Experimental data of flexural strength determined by four-point bending at room temperature is reported. The data indicates that AFB® composite specimens and equivalently prepared blank samples fracture at statistically same loads under standardized testing conditions. Failure of composites has not been observed at the interface and only at random flaws that are a result of sample preparation.

  8. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    SciTech Connect

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  9. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    PubMed

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model. PMID:25241676

  10. Simulation of heat transfer and convection during sapphire crystal growth in a modified heat exchanger method

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Park, Hyun Gyoon; Derby, Jeffrey J.

    2013-03-01

    Quasi-steady-state (QSS) and transient models, developed using the CrysMAS code, are employed to study the effects of transport mechanisms and cold finger design on the temperature distribution, melt flow field, and melt-crystal interface shape during the crystal growth of sapphire by a small-scale, modified heat exchanger method (HEM). QSS computations show the importance and effects of various heat transfer mechanisms in the crystal and melt, including conduction, internal radiation, and melt convection driven by buoyant and Marangoni forces. The design of the cold finger is demonstrated to have significant effects on growth states. Notably, transient computations on an idealized heat transfer model, supplemented with QSS calculations of a model with rigorous heat transfer representation, show that non-uniform growth conditions arise under uniform cooling of the system via a linear decrease in furnace set points. We suggest that more uniform HEM growth conditions may be achieved by using non-linear cool-down strategies.

  11. Surface phonon polariton responses of hexagonal sapphire crystals with non-polar and semi-polar crystallographic planes.

    PubMed

    Lee, Sai Cheong; Ng, Sha Shiong; Hassan, Haslan Abu; Hassan, Zainuriah; Dumelow, Thomas

    2014-09-15

    The surface phonon polariton (SPhP) characteristics of hexagonal sapphire crystals with non-polar and semi-polar crystallographic planes are investigated. A formulation that considers the effects of crystal orientation is employed to calculate the SPhP dispersion curves of the samples. The SPhP dispersion curves indicate that the SPhP responses of sapphire crystals in non-polar and semi-polar orientations are directionally sensitive. Resonance frequencies and spectral strengths of the SPhP modes can be modulated simply by tuning the angular positions of the samples. The validity of the theoretical results is confirmed by the polarized infrared attenuated total reflection measurements. PMID:26466299

  12. Defect Analysis of Boron Phosphide Thin Films and Sapphire Single Crystal Using Synchrotron X-ray Topography

    NASA Astrophysics Data System (ADS)

    Ding, Zihao

    Boron phosphide is an ideal semiconductor material used for neutron detectors because of its superior material properties, such as wide band gap and large thermal neutron capture cross-section of 10B. Since bulk BP is not readily available for neutron detector application, BP thin films are mainly synthesized by chemical vapor deposition (CVD). Among all the feasible substrates for BP deposition, SiC stands out due to its small lattice mismatch (4.5%) with BP, however it is necessary to optimize the growth condition to synthesize high quality BP thin films on SiC. In chapter III, BP thin film samples deposited on 4H-SiC and 6H-SiC under different growth conditions are characterized, mainly using synchrotron X-ray topography and other techniques such as optical microscopy and scanning electron microscopy. The relationship between BP thin film crystal quality and substrate material and orientation and other growth conditions is investigated. It can be concluded from the experimental data that the crystal quality of BP thin films on 4H-SiC substrate is much better than that on 6H-SiC substrate. Besides, poor crystalline quality of substrate will likely degrade the crystalline quality of epitaxial thin films. Sapphire single crystal has been widely used in high-technology industry because of its excellent combination between optical, electrical and mechanical properties. In this thesis, a-plane sapphire ribbon grown by Edge-defined Film-fed Growth method (EFG) is analyzed by characterizing the seed crystals used and the quality of as-grown ribbon, by reflection X-ray topography. Distributions and formation mechanisms of defects inside both the sapphire seed crystal and ribbon crystal are studied. Transmission topographs reveal the presence of two sets of slip bands that are nucleated from either edge, the distribution of which is symmetric in the used seed crystal and asymmetric in the pristine seed crystal. This phenomenon could be caused by the unstable growth

  13. Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth

    NASA Astrophysics Data System (ADS)

    Lu, Chung-Wei; Chen, Jyh-Chen; Chen, Chien-Hung; Chen, Chun-Hung; Hsu, Wen-Ching; Liu, Che-Ming

    2010-04-01

    The effect of the RF coil position during the stages of sapphire crystal growth process in an inductively heated Czochralski crystal growth furnace on the thermal and flow transport, the shape of the crystal-melt interface shape, and the power requirements is investigated numerically. The results show that although the maximum values of temperature and velocity decrease, the convexity of the crystal-melt interface increases as the crystal length grows. It is found that the least input power is required if the central position of the RF coil is maintained below the central position of the melt during the crystal growth process. Under such crystal growth conditions, the temperature gradients along the crystalline front are small.

  14. Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

    NASA Astrophysics Data System (ADS)

    Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

    2015-01-01

    To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

  15. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    SciTech Connect

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  16. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high-Q factor whispering gallery modes

    SciTech Connect

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire ({alpha}-Al{sub 2}O{sub 3}) exhibit extremely high electrical and mechanical Q factors ({approx_equal}10{sup 9} at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T{sup 3} dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify ''magic temperatures'' between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  17. Optical mode confinement and selection in single-crystal sapphire fibers by formation of nanometer scale cavities with hydrogen ion implantation

    NASA Astrophysics Data System (ADS)

    Spratt, William; Huang, Mengbing; Murray, Thomas; Xia, Hua

    2013-11-01

    The excellent material properties of single crystal sapphire fibers promise great advantages in applications related to harsh environment optical sensing, high laser power delivery, and high-resolution/sensitivity optical spectroscopy. However, the lack of viable cladding for confining light propagation in sapphire fibers with negligible transmission loss has restricted their practical applications. Despite great efforts in engineering either a low-refractive-index cladding layer or highly reflective mirror layer as sapphire fiber surface coatings, confining light propagation within sapphire fibers remains difficult in practice since such surface coatings fail to function due to increased thermal stress and fast erosion in environments with extremely high temperatures (>1000 °C) and chemically reactive species/gases. Here, we demonstrate a method for creating nanoscale cavities/voids in sapphire as effective fiber cladding structures that are thermally robust even at 1700 °C using hydrogen ion implantation. Material analysis of implanted sapphire crystals indicates that such nanoscale cavities play a key role in reducing the refractive index in sapphire crystals.

  18. Progress in the growth of large scale Ti:sapphire crystals by the heat exchanger method (HEM) for petawatt class lasers

    NASA Astrophysics Data System (ADS)

    Joyce, David B.; Schmid, Frederick

    2010-04-01

    In modelocked laser systems, the shortest possible pulse width is determined by the Fourier transform of the spectral bandwidth of the pulse; the wider the spectral bandwidth, the shorter the pulse. Titanium-doped sapphire (Ti:sapphire) offers the widest gain bandwidth of any currently available laser gain material, enabling systems to deliver pulse widths shorter than 10 fs (10 -14 s). Because of the short pulse durations, the peak power can be extremely high, and therefore Ti:sapphire lasers have been at the forefront of research into ultrafast, ultrahigh power lasers. These intense ultrashort laser pulses are the light source for fundamental studies of light-matter interactions. Interesting scientific results have been achieved with these lasers in the fields of high order harmonic and short pulse X-ray generations, high density plasmas, relativistic acceleration, relativistic nonlinear optics, time resolved X-ray diffraction with unprecedented time resolution and others. Researchers have recently achieved near petawatt (10 15 W) peak power laser operation using large diameter Ti:sapphire amplifiers, and are developing higher power lasers for research into high energy physics. However, the saturation fluence of the Ti:sapphire gain medium is limited to about 1 J/cm 2. Thus, continued scale up in peak laser energy requires the scale up of high-quality Ti:sapphire crystals for laser amplifiers. Current demand is for 100 mm diameter crystals, and this requirement is projected to grow up to 250 mm diameter crystals in a few years. To address this technological bottleneck, Crystal Systems has upgraded its heat exchanger method (HEM) furnaces and fabrication and metrology to scale up the production of Ti:sapphire crystals. Currently, 175 mm diameter Ti:sapphire amplifier crystals are being fabricated from high-quality 208 mm boules.

  19. DOE SAPPHIRE PROJECT

    SciTech Connect

    Dr. Gary R. Pickrell

    2000-03-01

    Since this is the first report for this project an extensive background section follows on the theory of operation of the single crystal sapphire sensor technology which will be developed and field tested at the Wabash River Coal Gasification Facility. Requirements for the temperature sensors for implementation in the coal gasifiers has been established in conjunction with the industrial partner, Dynegy. Coal slag immersion tests indicate good corrosion resistance of the single crystal sapphire. However, a more sophisticated corrosion apparatus has been constructed in order to test the optical attenuation of a single crystal sapphire fiber immersed in the coal slag at high temperature. These results will be reported in the next period. The data to date for sapphire sensor development is promising. More extensive data on the sapphire fiber sensor development will be reported for the next period.

  20. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  1. Optical anomalies and residual stresses in basal-plane-faceted ribbons of Stepanov-grown sapphire crystals

    NASA Astrophysics Data System (ADS)

    Denisov, A. V.; Krymov, V. M.; Punin, Yu. O.

    2007-03-01

    The effects of an anomalous biaxiality and a residual-stress field in basal-plane-faceted single-crystal sapphire ribbons were studied by an optical polarization method using a conoscopic light beam. Formulas that relate the difference between the principal stresses to the angle of optical-axis divergence are obtained. It is shown that the central regions of the ribbons undergo compressive stresses whereas their edges undergo tensile stresses. As compared to block-free ribbons, the stresses in block-containing ribbons increase more intensely with distance from the seed.

  2. Vapor phase growth of GaN crystals with different morphologies and orientations on graphite and sapphire substrates

    SciTech Connect

    Miura, Akira; Shimada, Shiro . E-mail: shimashi@eng.hokudai.ac.jp

    2006-09-14

    GaN crystals were grown on graphite and sapphire substrates at 990-1050 deg. C by reaction of Ga{sub 2}O with flowing NH{sub 3}. Ga{sub 2}O gas was produced at a constant rate (1.3 wt% min{sup -1}) by reaction of Ga{sub 2}O{sub 3} with carbon at 1000-1060 deg. C. The effect of NH{sub 3} concentration (3-100 vol%) and the nature of the substrate on the morphology and orientation of the GaN crystals were determined by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and selected area electron diffraction. It was found that sheet and plate-like crystals grew at different orientations to the substrate with different NH{sub 3} concentrations and substrates.

  3. Structure analysis on synthetic emerald crystals

    NASA Astrophysics Data System (ADS)

    Lee, Pei-Lun; Lee, Jiann-Shing; Huang, Eugene; Liao, Ju-Hsiou

    2013-05-01

    Single crystals of emerald synthesized by means of the flux method were adopted for crystallographic analyses. Emerald crystals with a wide range of Cr3+-doping content up to 3.16 wt% Cr2O3 were examined by X-ray single crystal diffraction refinement method. The crystal structures of the emerald crystals were refined to R 1 (all data) of 0.019-0.024 and w R 2 (all data) of 0.061-0.073. When Cr3+ substitutes for Al3+, the main adjustment takes place in the Al-octahedron and Be-tetrahedron. The effect of substitution of Cr3+ for Al3+ in the beryl structure results in progressively lengthening of the Al-O distance, while the length of the other bonds remains nearly unchanged. The substitution of Cr3+ for Al3+ may have caused the expansion of a axis, while keeping the c axis unchanged in the emerald lattice. As a consequence, the Al-O-Si and Al-O-Be bonding angles are found to decrease, while the angle of Si-O-Be increases as the Al-O distance increases during the Cr replacement.

  4. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    SciTech Connect

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang

    2004-04-01

    This report summarizes technical progress over the third six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on sensor probe design and machining, sensor electronics design, software algorithm design, sensor field installation procedures, and sensor remote data access and control. Field testing will begin in the next several weeks.

  5. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    SciTech Connect

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  6. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    SciTech Connect

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  7. High performance sapphire windows

    NASA Technical Reports Server (NTRS)

    Bates, Stephen C.; Liou, Larry

    1993-01-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  8. Analysis of crystal orientation in AlN layers grown on m-plane sapphire

    NASA Astrophysics Data System (ADS)

    Mogilatenko, A.; Kirmse, H.; Stellmach, J.; Frentrup, M.; Mehnke, F.; Wernicke, T.; Kneissl, M.; Weyers, M.

    2014-08-01

    Our study reports on the microstructure of AlN layers grown on m-plane sapphire by metal organic vapor phase epitaxy. We have found that AlN can nucleate with three different orientations on the m-plane sapphire surface: semipolar (112¯2) and (11¯03) as well as m-plane (11¯00). Depending on the growth conditions, i.e. V/III ratio, the differently oriented crystallites exhibit different lateral and vertical growth rates. At a low V/III ratio of 626 the vertical growth rate of semipolar (112¯2) AlN regions is much lower than that of the (11¯03) and (11¯00) oriented grains, which results in an almost complete lateral overgrowth of the (112¯2) AlN oriented regions. In contrast, a high V/III ratio of 1043 leads to the formation of uniform semipolar (112¯2) AlN layers. Nevertheless, the formation of differently oriented AlN crystallites could not be suppressed completely. These randomly appearing crystallites still show a high vertical growth rate and lead to a deterioration of the surface morphology.

  9. Crystallization by Particle Attachment in Synthetic, Biogenic, and Geologic Environments

    SciTech Connect

    De Yoreo, James J.; Gilbert, Pupa U.; Sommerdijk, Nico; Penn, R. Lee; Whitelam, Stephen B.; Joester, Derk; Zhang, Hengzhong; Rimer, Jeffrey D.; Navrotsky, Alexandra; Banfield, Jillian F.; Wallace, Adam F.; Michel, F. M.; Meldrum, Fiona C.; Colfen, Helmut; Dove, Patricia M.

    2015-07-31

    Field and laboratory observations show that crystals commonly form by the addition and attachment of particles that range from multi-ion complexes to fully formed nanoparticles. These non-classical pathways to crystallization are diverse, in contrast to classical models that consider the addition of monomeric chemical species. We review progress toward understanding crystal growth by particle attachment processes and show that multiple pathways result from the interplay of free energy landscapes and reaction dynamics. Much remains unknown about the fundamental aspects; particularly the relationships between solution structure, interfacial forces, and particle motion. Developing a predictive description that connects molecular details to ensemble behavior will require revisiting long-standing interpretations of crystal formation in synthetic systems and patterns of mineralization in natural environments.

  10. Spatial Coherence Preservation By Synthetic Single Diamond Crystals

    NASA Astrophysics Data System (ADS)

    Hoszowska, J.; Freund, A. K.; Guigay, J.-P.; Rommeveaux, A.

    2004-05-01

    The degree of spatial coherence after x-ray diffraction by synthetic single diamond crystals was investigated. The coherence preservation was measured by means of the Talbot effect for x-rays at the optics beamline BM5 at the ESRF. The (111)- and (100)- oriented specimens of type Ib and IIa were grown by De Beers. To establish a correlation between the coherence degradation and the surface quality, 3D surface topography was measured with an optical interferometric profiler and an AFM. Likewise, to pinpoint the relationship with crystalline quality, the samples were characterized by means of double crystal x-ray diffractometry with microscopic resolution.

  11. Spatial Coherence Preservation By Synthetic Single Diamond Crystals

    SciTech Connect

    Hoszowska, J.; Freund, A. K.; Guigay, J.-P.; Rommeveaux, A.

    2004-05-12

    The degree of spatial coherence after x-ray diffraction by synthetic single diamond crystals was investigated. The coherence preservation was measured by means of the Talbot effect for x-rays at the optics beamline BM5 at the ESRF. The (111)- and (100)- oriented specimens of type Ib and IIa were grown by De Beers. To establish a correlation between the coherence degradation and the surface quality, 3D surface topography was measured with an optical interferometric profiler and an AFM. Likewise, to pinpoint the relationship with crystalline quality, the samples were characterized by means of double crystal x-ray diffractometry with microscopic resolution.

  12. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    SciTech Connect

    Nakasu, T. Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-10-28

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  13. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-10-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [-211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  14. Optical Properties of Natural and Synthetic Beryl Crystals

    NASA Astrophysics Data System (ADS)

    Skvortsova, V.; Mironova-Ulmane, N.; Trinkler, L.; Merkulov, V.

    2015-03-01

    The results of investigation of photoluminescence and UV-Visible absorption spectra of natural beryl crystals from Ural Mountains before and after fast neutron irradiation and synthetic crystal grown in Belarus and Russia are presented. Photoluminescence (PL) spectra of synthetic beryl crystals contain a broad band with maxima 740 nm excited both by UV light (λex = 260 nm, 271 nm) and laser excitation (λex =263 nm). This band is connected with Fe2+ ions. The temperature lowering down to 8 K leads to appearance of narrow lines in the 680 - 720 nm regions. Emission lines observed in the luminescence spectra are connected with electron transition 2Eg→4A2g of the Cr3+ ions: R-lines (682.5 nm) arise from isolated Cr3+ ions occupying Al3+ sites; N-lines (691, 698, 703, 706 and 711 nm) arise from several types of exchange-coupled pairs of Cr3+ ions occupying first, second and third nearest and related neighbour Al3+ sites. It is shown that the absorption bands in the 690-580 nm region of natural pale blue beryl crystals caused by neutron irradiation belong to a complex center, which consists of Cr3+ ions and radiation defect - F or F+- center. Presence of Fe2+ ions contributes to the persistence of the complex defect.

  15. Orientation relationships of copper crystals on sapphire (1 0 1¯ 0) m-plane and (1 0 1¯ 2) r-plane substrates

    NASA Astrophysics Data System (ADS)

    Chatain, Dominique; Curiotto, Stefano; Wynblatt, Paul; Meltzman, Hila; Kaplan, Wayne D.; Rohrer, Gregory S.

    2015-05-01

    Copper films deposited on m- and r-plane sapphire substrates have been dewetted in either the solid or the liquid state, and equilibrated at 1253 K. The orientation relationships (ORs) between the dewetted copper crystals and the sapphire substrates have been investigated by electron backscatter diffraction. In addition, the shape of the copper/sapphire interface has been studied by scanning electron microscopy. Although the as-deposited films develop {1 1 1} surfaces parallel to both substrates, after solid state dewetting the copper crystals on the m-plane substrate are found to change their interface plane from Cu{1 1 1}||Al2O3(m-plane) to Cu{1 1 1}|| Al2O3 (a-plane), and after liquid state dewetting the preferred OR of copper on both m- and r-plane substrates may be expressed as: Cu{1 1 1}<1 1 0> || Al2O3 {1 1 2bar 0}<0 0 0 1>. This OR is identical to that previously observed for copper on the sapphire a-plane.

  16. Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Yasui, Daiki; Tamaki, Shinya; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-05-01

    Single-crystal a-plane AlN(11\\bar{2}0) films were grown on r-plane sapphire (1\\bar{1}02) substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia (NH3) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 °C, and NH3 preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH3 preflow time. The crystallinity of a-plane AlN films was improved by varying the NH3 preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with NH3 preflow for 30 s.

  17. Characterization of critically cleaned sapphire single-crystal substrates by atomic force microscopy, XPS and contact angle measurements

    NASA Astrophysics Data System (ADS)

    Zhang, Dan; Wang, You; Gan, Yang

    2013-06-01

    A contaminant-free surface of single-crystal α-Al2O3 (or sapphire) substrates is key to the experimental studies of its surface and interfacial properties at ambient conditions. Here we critically evaluated methods reported in the literature using comprehensive surface analysis techniques including atomic force microscopy, XPS and contact angle measurements. We found that reported methods did not perform well in terms of removing both organic and particulate contaminants from the (0 0 0 1) basal surface. After thoroughly examining the cleaning effect of various chemical solutions and UV light and plasma irradiation, and based on modified RCA cleaning protocols, we proposed a new wet-cleaning method showing outstanding cleaning performance. This new reliable method will be very useful for the next-step surface chemistry study of single-crystal α-Al2O3. It was also demonstrated that AFM, due to its high spatial resolution and sensitivity as a local probe technique, was an indispensable tool for surface contamination control studies.

  18. The crystallization of new synthetic organo-clays

    SciTech Connect

    Carrado, K.A.

    1994-03-01

    A novel method for the preparation of new synthetic, potentially catalytic clays has been discovered. In this method, a diverse variety of organic and-organometallic molecules can be directly incorporated during crystallization of the clay. This method has great potential for the incorporation of catalytically active species to create new heterogeneous catalysts. The catalyst precursors are organic-inorganic composites comprised of a layered silicate intercalated with such molecules as porphyrins or metalloporphyrins, organic aromatic dyes, a Cu(II) phthalocyanine dye, or bulky transition metal chelates. This procedure is readily applicable for introducing specific molecules for highly tailored applications, because successful templates include a variety of catalytically, electrochemically, and photochemically active species. Characterization studies were performed to establish the composition of the synthetic products, including x-ray absorption spectroscopy at NSLS.

  19. Synthetic Strategies Toward DNA-Coated Colloids that Crystallize.

    PubMed

    Wang, Yufeng; Wang, Yu; Zheng, Xiaolong; Ducrot, Étienne; Lee, Myung-Goo; Yi, Gi-Ra; Weck, Marcus; Pine, David J

    2015-08-26

    We report on synthetic strategies to fabricate DNA-coated micrometer-sized colloids that, upon thermal annealing, self-assemble into various crystal structures. Colloids of a wide range of chemical compositions, including poly(styrene), poly(methyl methacrylate), titania, silica, and a silica-methacrylate hybrid material, are fabricated with smooth particle surfaces and a dense layer of surface functional anchors. Single-stranded oligonucleotides with a short sticky end are covalently grafted onto particle surfaces employing a strain-promoted alkyne-azide cycloaddition reaction resulting in DNA coatings with areal densities an order of magnitude higher than previously reported. Our approach allows the DNA-coated colloids not only to aggregate upon cooling but also to anneal and rearrange while still bound together, leading to the formation of colloidal crystal compounds when particles of different sizes or different materials are combined. PMID:26192470

  20. Histological characteristics of peri-implant mucosa around Brånemark and single-crystal sapphire implants.

    PubMed

    Arvidson, K; Fartash, B; Hilliges, M; Köndell, P A

    1996-03-01

    Soft tissues surrounding Brånemark titanium implants and single crystal sapphire implants were studied by conventional light- and transmission electron microscopy and by immunohistochemical markers for cytokeratin, protein S-100, Factor VIII and KP1. Histological sections of biopsies obtained from clinically healthy peri-implant mucosa were separated into a keratinized outer implant epithelium and an inner, non-keratinized epithelium, both immunoreactive towards cytokeratin. The inner implant epithelium terminated in a junctional epithelium, apically not a few cell layers thick. The cells adjacent to the implant showed a condensed cytoplasm, resembling hemidesmosomes. In the underlying connective tissue, rich in fibroblasts and factor VIII immunoreactive blood vessels, the bundles of collagen ran in different directions. S-100 immunoreactive nerve structures were more frequently found beneath the outer than the inner implant epithelium. Inflammatory cell infiltrates, some KP1 positive, were observed in the apical parts of the inner implant epithelium. S-100 positive Langerhans' cells were present mainly within the the outer implant epithelium. For the two implant systems, the techniques disclosed no qualitative structural differences in the adjacent soft tissues. PMID:9002817

  1. Crystallization and textural porosity of synthetic clay minerals.

    SciTech Connect

    Carrado, K. A.; Csencsits, R.; Thiyagarajan, P.; Seifert, S.; Macha, S. M.; Harwood, J.; Univ. of Illinois at Chicago; IIT

    2002-12-01

    The crystallization of synthetic layered magnesium silicate hectorite clays from both silica sol and organosilane sources is compared. For the silica sol-derived clays, a templating method is employed wherein organic or polymeric molecules are included during clay crystallization that are then removed from the composites via calcination. The mechanism of silane-derived hectorite formation is followed by XRD, TGA, 29Si MAS NMR, and small angle X-ray scattering (SAXS), and results are compared to those obtained for the sol-derived hectorite. The mechanism appears to be similar but the rate is approximately doubled when the silane is used rather than silica sol. Analytical transmission electron microscopy (TEM) is exploited to glean structural morphology information towards resolving the nature of the resulting pore network structures. Results are compared with nitrogen adsorption-desorption isotherm behavior; dominant hysteresis loops are present in the type IV isotherms. Pore size distributions based on both the adsorption and desorption isotherms are compared. Small angle neutron scattering (SANS) experiments reveal that the average particle size increases as synthetic laponite < sol-derived hectorite < silane-derived hectorite < natural hectorite. Contrast matching SANS studies in aqueous and organic solvents are carried out to extract information about pore accessibility.

  2. The crystal structures of semi-synthetic aequorins

    PubMed Central

    Toma, Sachiko; Chong, Khoon Tee; Nakagawa, Atsushi; Teranishi, Katsunori; Inouye, Satoshi; Shimomura, Osamu

    2005-01-01

    The photoprotein aequorin emits light by an intramolecular reaction in the presence of a trace amount of Ca2+. Semi-synthetic aequorins, produced by replacing the coelenterazine moiety in aequorin with the analogues of coelenterazine, show widely different sensitivities to Ca2+. To understand the structural basis of the Ca2+-sensitivity, we determined the crystal structures of four semi-synthetic aequorins (cp-, i-, br- and n-aequorins) at resolutions of 1.6–1.8 Å. In general, the protein structures of these semi-synthetic aequorins are almost identical to native aequorin. Of the four EF-hand domains in the molecule, EF-hand II does not bind Ca2+, and the loop of EF-hand IV is clearly deformed. It is most likely that the binding of Ca2+ with EF-hands I and III triggers luminescence. Although little difference was found in the overall structures of aequorins investigated, some significant differences were found in the interactions between the substituents of coelenterazine moiety and the amino acid residues in the binding pocket. The coelenterazine moieties in i-, br-, and n-aequorins have bulky 2-substitutions, which can interfere with the conformational changes of protein structure that follow the binding of Ca2+ to aequorin. In cp-aequorin, the cyclopentylmethyl group that substitutes for the original 8-benzyl group does not interact hydrophobically with the protein part, giving the coelenterazine moiety more conformational freedom to promote the light-emitting reaction. The differences of various semi-synthetic aequorins in Ca2+-sensitivity and reaction rate are explained by the capability of the involved groups and structures to undergo conformational changes in response to the Ca2+-binding. PMID:15632284

  3. Synthetic routes and applications of photonic crystal composites

    NASA Astrophysics Data System (ADS)

    Jiang, Ping

    This dissertation focuses on: (1) the development of synthetic routes to fabricate robust photonic crystal composites that allows for a wide range of monomeric systems to be utilized in the encapsulation procedure to a priori design the final optical and thermomechanical characteristics of the composite and (2) the characterization of the optical and thermomechanical properties of the composites and their exploitation in potential applications. In the first section, two strategies were developed, one using poly(ethylene glycol) (PEG) and its acrylate derivatives as matrixes to encapsulate the CCA of polystyrene spheres and to form a photonic crystal hydrogel (PCH) composite. The second strategy employs the technique of first dehydrating the PCH composite, then swelling it in a monomeric solution, and finally photopolymerizing it in situ, to form a water-free photonic crystal, or photonic band gap (PBG) composite. In the second section, the mechanochromic and solvatochromic responses of the PBG composite composed of poly(EGMEA) were characterized. This composite exhibited a reversible color variation at deformation frequencies up to 200 Hz and a 172 nm total stop band tuning range between +/-120V applied voltages when it was coupled with a piezoelectric actuator. Based on this effect, approaches for generating complex permanent multicolor patterns in both PBG and PCH films were developed. Finally, two types of potential sensing systems were explored in this dissertation. One is a chemical vapor sensing system composed of the poly(EGMEA)-based PBG composite film. The second is a label-free optical bio-recognition system composed of an antigen-selective photonic crystal hydrogel (PCH). The avidin molecules were first covalently immobilized in the PCH film. The biotinylated capture antibody was then introduced into the film through the non-covalent avidin-biotin binding. (Abstract shortened by UMI.)

  4. CRYSTAL GROWTH. Crystallization by particle attachment in synthetic, biogenic, and geologic environments.

    PubMed

    De Yoreo, James J; Gilbert, Pupa U P A; Sommerdijk, Nico A J M; Penn, R Lee; Whitelam, Stephen; Joester, Derk; Zhang, Hengzhong; Rimer, Jeffrey D; Navrotsky, Alexandra; Banfield, Jillian F; Wallace, Adam F; Michel, F Marc; Meldrum, Fiona C; Cölfen, Helmut; Dove, Patricia M

    2015-07-31

    Field and laboratory observations show that crystals commonly form by the addition and attachment of particles that range from multi-ion complexes to fully formed nanoparticles. The particles involved in these nonclassical pathways to crystallization are diverse, in contrast to classical models that consider only the addition of monomeric chemical species. We review progress toward understanding crystal growth by particle-attachment processes and show that multiple pathways result from the interplay of free-energy landscapes and reaction dynamics. Much remains unknown about the fundamental aspects, particularly the relationships between solution structure, interfacial forces, and particle motion. Developing a predictive description that connects molecular details to ensemble behavior will require revisiting long-standing interpretations of crystal formation in synthetic systems, biominerals, and patterns of mineralization in natural environments. PMID:26228157

  5. Differences in crystal habitus of natural and synthetic colloids

    NASA Astrophysics Data System (ADS)

    Wieczorek, Arkadiusz K.; Händel, Matthias; Totsche, Kai Uwe

    2014-05-01

    The formation of colloids from natural aqueous solutions is influenced by a multitude of biogeochemical and physicochemical processes and the presence of a large diversity of geogen and biogen, inorganic and organic solution phase components. A thereby frequently neglected class of components is the dissolved and colloidal phase organic matter (DOM). As DOM will interact with other solution phase components, we hypothesize that nanosized and colloidal particles formed in DOM bearing solutions may differ from synthetic precipitates either by size, shape, crystal habitus, crystallinity, composition or combinations of that. To investigate this, we analyzed natural colloidal particles collected from a limestone aquifer of the Upper Muschelkalk formation at Hainich National Park, Thuringia, Germany. Major groundwater components are Ca2+, Mg2+, Na+, SO42-, Cl-, HCO3- , and about 1 ppm of total organic carbon (TOC) in dissolved and colloidal form. Synthetic nanoparticles were precipitated from a series of oversaturated solutions containing single or mixtures of the following salts CaSO4, MgSO4, Ca(HCO3)2 NaCl typical for limestone environments. The solutions were produced with both natural groundwater and pure water (milli-Q). Droplets of such produced colloidal suspension were pipetted on silicon wafers and subject to air drying. The wafers were then analyzed by scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM). We found that particles from oversaturated CaSO4 solution in pure water precipitate as large needle shaped crystals, whereas precipitates from CaSO4 solution in natural water were much smaller and showed a rosette like shape - similar in size and shape to gypsum crystals collected from the limestone formation water. Similar differences we found for other aqueous solution compositions. From this pilot study we presume that even minute amounts of dissolved and colloidal phase organic matter in

  6. Ion Milling of Sapphire

    NASA Technical Reports Server (NTRS)

    Gregory, Don A.

    2002-01-01

    The ion figuring system at the Marshall Space Flight Center has been successfully used for at least three previous investigations into the ion milling of metals. The research was directed toward improving the surface quality of X-ray directing optics. These studies were performed on surfaces that were already hand polished to an excellent surface quality and were intended to remove the residual unwanted figure left by those techniques. The ion milling was typically carried out on test surfaces or mandrels that were several centimeters in width and length. The good thermal conductivity of the metal samples allowed the ion beam to be directed onto the sample for an indefinite period of time. This is not true of sapphire or most electrical insulators and problems have arisen in recent attempts to ion mill thin samples of sapphire. The failure and fracture of the material was likely due to thermal stresses and the relatively low thermal conductivity of sapphire (compared to most metals), These assumed stresses actually provided the key as to how they might be monitored. A thermal gradient in the sapphire sample will induce an effective index of refraction change and because of the shape constraint and the crystal structure and simple thermal expansion, this index change will be nonuniform across the sample. In all but simple cubic crystal structures, this leads to a spatially nonuniform optical retardance induced on any polarized optical beam traversing the sample, and it is this retardance that can be monitored using standard polarimetric procedures.

  7. Ureaplasma urealyticum-induced crystallization of magnesium ammonium phosphate and calcium phosphates in synthetic urine.

    PubMed

    Grenabo, L; Brorson, J E; Hedelin, H; Pettersson, S

    1984-10-01

    Crystallization of struvite and calcium phosphates was studied in vitro as encrustations on glass rods immersed in synthetic urine, to evaluate the crystallization capacity of Ureaplasma urealyticum and compare it with that of known urease and non-urease-producing bacteria. Inoculation of the synthetic urine with Ureaplasma urealyticum resulted in alkalinization of the synthetic urine and crystallization of struvite and brushite. Inoculation with Proteus mirabilis caused a faster and more pronounced alkalinization as well as crystallization of struvite and apatite. The alkalinization and crystallization caused by Ureaplasma urealyticum and Proteus mirabilis was completely prevented by acetohydroxamic acid, a potent urease inhibitor, linking the crystallization to the urease activity of the microorganisms. When the synthetic urine was inoculated with urease-negative Escherichia coli no alkalinization and no crystallization were seen. PMID:6381769

  8. Crystal chemistry of natural and synthetic trioctahedral micas: Exploring the limits of geometric crystal chemical models

    NASA Astrophysics Data System (ADS)

    Mercier, Patrick H. J.

    Seventy-five synthetic powder trioctahedral mica samples (between Mg, Co, Ni, and Fe end members, with different degrees of oxidation, vacancy and Al/Si contents, and including an OH/F substitution series) were studied by room-temperature powder X-ray diffraction. The iron-bearing samples were studied by 57Fe Mossbauer spectroscopy. Subsets of the samples were also characterized by scanning electron microscopy combined with energy dispersive spectroscopy, optical microscopy, X-ray fluorescence spectroscopy, and gas chromatography. Lattice parameters (refined under the 1M stacking polytype, space group C2/m) were determined for all powder samples and iron site populations ([4]Fe 3+, [6]Fe2+, and [6]Fe 2+) were obtained from Mossbauer spectroscopy. The relation (c/a)cosbeta* = 113 was found to hold exactly (within experimental error) for all synthetic powders whereas it does not hold in general for synthetic and natural 1M single-crystals. The above relation is predicted to hold for geometric home-octahedral sheets (having equal M1 and M2 site bond lengths) and not to hold for geometric meso-octahedral sheets (having unequal M1 and M2 site bond lengths). The counter-rotation of the M2 site of 1M single-crystals exactly (within experimental error) follows the geometric meso-octahedral sheet model, which, assuming a uniform octahedral sheet height and site-specific M1 and M2 bond lengths, predicts site-specific flattening angles and a counter-rotation angle for the M2 site which is uniquely determined by the bond length difference between the M1 and M2 sites. A geometric meso-octahedral 2:1 layer silicate was shown to require corrugated tetrahedral sheets composed of bond-distorted tetrahedra. Key geometric meso-octahedral distortions in 1M single-crystals were identified and elucidated: (i) intra-layer top-bottom displacements within a TOT layer; and (ii) a tetrahedral bending angle between the apical bond and the pyramidal base formed by the three basal bonds. Plots

  9. Morphology and structural perfection of shaped sapphire

    NASA Astrophysics Data System (ADS)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pishchik, V. V.

    1980-09-01

    This paper is concerned with an investigation of the characteristic features in the structural perfection of sapphire crystals grown by the Stepanov method. It was shown that the formation of the mosaic grains was considerably dependent on the growth rate. When growing tubular shaped crystals the defect density is relatively insensitive to the growth rate. The structural perfection of shaped sapphire depends on the ratio of the emitting outer surface area to the volume of the crystal. Growth of sapphire shapes occurs by addition of separate atoms and also by the joining of the complexes first formed in the melt before the crystallization front. Upon incoherent crystal twinning, formation of dislocations and boundaries with small angle misorientations takes place. The observed features in the morphology and the structural perfection of shaped sapphire obtained by the Stepanov technique are caused by the considerable differences in crystallization conditions characteristic of this method. These differences result in a change in the growth mechanism.

  10. System and method for forming synthetic protein crystals to determine the conformational structure by crystallography

    DOEpatents

    Craig, G.D.; Glass, R.; Rupp, B.

    1997-01-28

    A method is disclosed for forming synthetic crystals of proteins in a carrier fluid by use of the dipole moments of protein macromolecules that self-align in the Helmholtz layer adjacent to an electrode. The voltage gradients of such layers easily exceed 10{sup 6}V/m. The synthetic protein crystals are subjected to x-ray crystallography to determine the conformational structure of the protein involved. 2 figs.

  11. System and method for forming synthetic protein crystals to determine the conformational structure by crystallography

    DOEpatents

    Craig, George D.; Glass, Robert; Rupp, Bernhard

    1997-01-01

    A method for forming synthetic crystals of proteins in a carrier fluid by use of the dipole moments of protein macromolecules that self-align in the Helmholtz layer adjacent to an electrode. The voltage gradients of such layers easily exceed 10.sup.6 V/m. The synthetic protein crystals are subjected to x-ray crystallography to determine the conformational structure of the protein involved.

  12. Sapphire statistical characterization and risk reduction program

    NASA Astrophysics Data System (ADS)

    McClure, Donald R.; Cayse, Robert; Black, David R.; Goodrich, Steven M.; Lagerloef, K. Peter D.; Harris, Daniel C.; McCullum, Dale; Platus, Daniel H.; Patty, Charles E., Jr.; Polvani, Robert S.

    2001-09-01

    The Sapphire Statistical Characterization and Risk Reduction Program tested 1400 4-point flexure bars with different crystal orientations at different temperatures to establish a mechanical strength database for engineering design. Sapphire coupons were selected to represent surfaces on two different missile windows and a missile dome. Sapphire was obtained from the same suppliers used for the windows or dome and, as much as possible, coupons were fabricated in the same manner as the corresponding part of the window or dome. For one missile window, sapphire from one fabricator was 50% stronger than sapphire made to the same specifications from the same blanks by another fabricator. In laser thermal shock tests, sapphire performed better than predicted from flexure tests. Of several nondestructive methods evaluated for their ability to identify mechanically weak specimens, only x-ray topography was correlated with strength for a limited set of specimens.

  13. Eutectic bonding of sapphire to sapphire

    NASA Technical Reports Server (NTRS)

    Deluca, J. J.

    1973-01-01

    Eutectic mixture of aluminum oxide and zirconium oxide provides new bonding technique for sapphires and rubies. Technique effectively reduces possibility of contamination. Bonding material is aluminum oxide and zirconium oxide mixture that matches coefficient of thermal expansion of sapphire.

  14. Some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening

    NASA Technical Reports Server (NTRS)

    Bahadur, H.; Parshad, R.

    1983-01-01

    The paper reports some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening. The present results show how the frequency shift in quartz crystals can be influenced by heat processing prior to irradiation and how this procedure can lead to radiation hardening for obtaining precise frequencies and time intervals from quartz oscillators in space.

  15. An approach to crystallizing proteins by metal-mediated synthetic symmetrization

    SciTech Connect

    Laganowsky, Arthur; Zhao, Minglei; Soriaga, Angela B.; Sawaya, Michael R.; Cascio, Duilio; Yeates, Todd O.

    2011-12-09

    Combining the concepts of synthetic symmetrization with the approach of engineering metal-binding sites, we have developed a new crystallization methodology termed metal-mediated synthetic symmetrization. In this method, pairs of histidine or cysteine mutations are introduced on the surface of target proteins, generating crystal lattice contacts or oligomeric assemblies upon coordination with metal. Metal-mediated synthetic symmetrization greatly expands the packing and oligomeric assembly possibilities of target proteins, thereby increasing the chances of growing diffraction-quality crystals. To demonstrate this method, we designed various T4 lysozyme (T4L) and maltose-binding protein (MBP) mutants and cocrystallized them with one of three metal ions: copper (Cu2+), nickel (Ni2+), or zinc (Zn2+). The approach resulted in 16 new crystal structures-eight for T4L and eight for MBP-displaying a variety of oligomeric assemblies and packing modes, representing in total 13 new and distinct crystal forms for these proteins. We discuss the potential utility of the method for crystallizing target proteins of unknown structure by engineering in pairs of histidine or cysteine residues. As an alternate strategy, we propose that the varied crystallization-prone forms of T4L or MBP engineered in this work could be used as crystallization chaperones, by fusing them genetically to target proteins of interest.

  16. An approach to crystallizing proteins by metal-mediated synthetic symmetrization.

    PubMed

    Laganowsky, Arthur; Zhao, Minglei; Soriaga, Angela B; Sawaya, Michael R; Cascio, Duilio; Yeates, Todd O

    2011-11-01

    Combining the concepts of synthetic symmetrization with the approach of engineering metal-binding sites, we have developed a new crystallization methodology termed metal-mediated synthetic symmetrization. In this method, pairs of histidine or cysteine mutations are introduced on the surface of target proteins, generating crystal lattice contacts or oligomeric assemblies upon coordination with metal. Metal-mediated synthetic symmetrization greatly expands the packing and oligomeric assembly possibilities of target proteins, thereby increasing the chances of growing diffraction-quality crystals. To demonstrate this method, we designed various T4 lysozyme (T4L) and maltose-binding protein (MBP) mutants and cocrystallized them with one of three metal ions: copper (Cu²⁺, nickel (Ni²⁺), or zinc (Zn²⁺). The approach resulted in 16 new crystal structures--eight for T4L and eight for MBP--displaying a variety of oligomeric assemblies and packing modes, representing in total 13 new and distinct crystal forms for these proteins. We discuss the potential utility of the method for crystallizing target proteins of unknown structure by engineering in pairs of histidine or cysteine residues. As an alternate strategy, we propose that the varied crystallization-prone forms of T4L or MBP engineered in this work could be used as crystallization chaperones, by fusing them genetically to target proteins of interest. PMID:21898649

  17. Thermal characteristics of sapphire contact probe delivery systems for laser angioplasty.

    PubMed

    Ashley, S; Brooks, S G; Gehani, A A; Kester, R C; Rees, M R

    1990-01-01

    Contact probes made from synthetic sapphire crystal, designed for general laser surgery, are currently being evaluated for use in laser angioplasty. Their mode of action and safety in the context of arterial recanalisation is unknown, particularly with respect to the degree of probe and catheter heating. Infrared thermal imaging was used to investigate the surface temperature rise of various rounded sapphire probes during emission of continuous wave Nd-YAG (1,064 nm) laser energy. Catheter safety was addressed by analyzing the temperature of the metal interface between the optical fiber and sapphire, as well as the catheter proximal to this junction. Transmission of Nd-YAG energy through each probe was also measured. Five rounded probes of 1.8-3.0 mm diameter (three supplied by Surgical Laser Technologies [SLT], two by Living Technology [LT]), along with their respective optical catheters, were compared. There was a large temperature gradient between the front and rim of the probes. The maximum surface temperature rise of the sapphire (at 20 W, 5-second exposure) was 314-339 degrees C (SLT) and 90-108 degrees C (LT) [P less than 0.001, 3-way ANOVA]. The reason for this difference may be related to "crazing" of the front surface of the SLT sapphires. At all energy levels sapphire temperatures were considerably lower than attained by metal laser thermal angioplasty probes. Forward transmission was slightly higher in the SLT probes (75-85%) than the LT sapphires (54-69%). With fiber perfusion at 2 ml/minute, a minor degree of heating of the metal sapphire holders was recorded (maximum rise 35 degrees C), but heating of the catheter proximal to this was negligible. Therefore, it would appear that the risk of tip detachment or arterial injury due to heating of the connecting metal interface is extremely low. Without perfusion, however, there was a greater degree of interface heating in the LT delivery system suggestive of more laser backscattering by these sapphires

  18. Characterization of single crystal films of molybdenum (011) grown by molecular beam epitaxy on sapphire (112¯0) and studied by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    Świȩch, W.; Mundschau, M.; Flynn, C. P.

    1999-08-01

    Films of molybdenum grown on the (112¯0) plane of sapphire (Al 2O 3) are characterized using low-energy microscopy and low-energy electron diffraction. Stress fields observed on the Mo surface originate at dislocations and at miscut steps of the buried molybdenum-alumina vicinal interface. As-grown films contain small-angle grain boundaries. These are largely eliminated upon heating to 1700 K as edge dislocations that form the boundaries become extremely mobile. Edge dislocations attract and annihilate one another, and the small-angle grain boundaries disappear. Mobility of edge dislocations is correlated with rapid diffusion of carbon, which apparently pins dislocations up to temperatures that allow diffusion of carbon from dislocations into the bulk. The main contaminants of the Mo surface are carbon, oxygen and carbon monoxide. The most stable impurities are carbides that persist to 1700 K. Oxygen promotes bunching of monatomic steps into groups of two, three and four. Electron beams dissociate CO with energy less than 1 eV and deposit residues of carbon. Fairly ideal single crystal films of Mo produced by annealing exhibit monatomic surface step and terrace structure, and a minimum of dislocations. The quality of surfaces on these films exceeds that of typical single crystal bulk samples and is well suited for fundamental studies in surface science.

  19. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    SciTech Connect

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-05-19

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  20. Cleaved thioredoxin fusion protein enables the crystallization of poorly soluble ERα in complex with synthetic ligands

    SciTech Connect

    Cura, Vincent; Gangloff, Monique; Eiler, Sylvia; Moras, Dino; Ruff, Marc

    2008-01-01

    A new crystallization strategy: the presence of cleaved thioredoxin fusion is critical for crystallization of the estrogen nuclear receptor ligand binding domain in complex with synthetic ligands. This novel technique should be regarded as an interesting alternative for crystallization of difficult proteins. The ligand-binding domain (LBD) of human oestrogen receptor α was produced in Escherichia coli as a cleavable thioredoxin (Trx) fusion in order to improve solubility. Crystallization trials with either cleaved and purified LBD or with the purified fusion protein both failed to produce crystals. In another attempt, Trx was not removed from the LBD after endoproteolytic cleavage and its presence promoted nucleation and subsequent crystal growth, which allowed the structure determination of two different LBD–ligand–coactivator peptide complexes at 2.3 Å resolution. This technique is likely to be applicable to other low-solubility proteins.

  1. High-temperature strength of sapphire

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.

    2000-10-01

    The Sapphire Statistical Characterization and Risk Reduction Program tested approximately 1500 4-point flexure bars with different crystal orientations at different temperatures to establish a mechanical strength database for engineering design. Sapphire coupons were selected to represent surfaces on two different missile windows and a missile dome. Sapphire was obtained from the same suppliers used for the windows or dome and, as much as possible, coupons were fabricated in the same manner as the corresponding part of the window or dome. Perhaps the most interesting result was that sapphire from one fabricator was 50% stronger than sapphire made to the same specifications from the same blanks by another fabricator. In laser heating tests, sapphire performed better than predicted from flexure tests. When a compliant layer of graphite was used as a pad between the test specimens and the load fixture, sapphire in which the principal axis of tension and compression was parallel to the c-axis increased in apparent strength by a factor of 2 - 3. Strengths of other crystal orientations were not significantly affected by the graphite pads, but the incidence of twinning at 883 K was reduced by graphite.

  2. Control of macromolecule distribution within synthetic and biogenic single calcite crystals

    SciTech Connect

    Aizenberg, J.; Weiner, S.; Addadi, L.; Hanson, J.; Koetzle, T.F.

    1997-02-05

    The ability of organisms to exercise control over crystal growth is wonderfully exemplified by skeleton formation in echinoderms. A sea urchin spine is a unique composite of a single crystal of calcite and glycoproteins intercalated inside the crystal during its growth. Here we performed a detailed morphological and high-resolution synchrotron X-ray diffraction study of the textures of synthetic and biogenic calcite crystals. We show that the intracrystalline macromolecules from sea urchin spines, when allowed to interact with growing calcite crystals in vitro, selectively reduce the coherence lengths and degrees of alignment of the perfect domains in specific crystallographic directions. These directions also correspond to the newly-developed stable faces. In contrast, the defect distribution of young sea urchin spines composed entirely of spongy stereomic structure is much more isotropic. In mature spines containing secondarily filled-in wedges of calcite, the degree of anisotropy is intermediate between that of the synthetic crystals and the young spines. The macromolecules extracted from young and mature spines are, however, very similar. These observations demonstrate the inherent capability of occluded matrix macromolecules to finely differentiate between crystal planes by stereochemical recognition processes. 20 refs., 5 figs., 2 tabs.

  3. A neutron sensor based on synthetic single crystal diamond

    SciTech Connect

    Schmid, G J; Koch, J A; Lerche, R A; Moran, M J

    2003-10-17

    We report the first neutron data for a single crystal Chemical Vapor Deposition (CVD) diamond sensor. Results are presented for 2.5, 14.1, and 14.9 MeV incident neutrons. We show that the energy resolution for 14.1 MeV neutrons is at least 2.9% (as limited by the energy spread of the incident neutrons), and perhaps as good as 0.4% (as extrapolated from high resolution {alpha} particle data). This result could be relevant to fusion neutron spectroscopy at machines like the International Thermonuclear Experimental Reactor (ITER). We also show that our sensor has a high neutron linear attenuation coefficient, due to the high atomic density of diamond, and this could lead to applications in fission neutron detection.

  4. Transformation and Crystallization Energetics of Synthetic and Biogenic Amorphous Calcium Carbonate

    SciTech Connect

    Radha, A. V.; Forbes, Tori Z.; Killian, Christopher E.; Gilbert, P.U.P.A; Navrotsky, Alexandra

    2010-01-01

    Amorphous calcium carbonate (ACC) is a metastable phase often observed during low temperature inorganic synthesis and biomineralization. ACC transforms with aging or heating into a less hydrated form, and with time crystallizes to calcite or aragonite. The energetics of transformation and crystallization of synthetic and biogenic (extracted from California purple sea urchin larval spicules, Strongylocentrotus purpuratus) ACC were studied using isothermal acid solution calorimetry and differential scanning calorimetry. Transformation and crystallization of ACC can follow an energetically downhill sequence: more metastable hydrated ACC → less metastable hydrated ACC→anhydrous ACC ~ biogenic anhydrous ACC→vaterite → aragonite → calcite. In a given reaction sequence, not all these phases need to occur. The transformations involve a series of ordering, dehydration, and crystallization processes, each lowering the enthalpy (and free energy) of the system, with crystallization of the dehydrated amorphous material lowering the enthalpy the most. ACC is much more metastable with respect to calcite than the crystalline polymorphs vaterite or aragonite. The anhydrous ACC is less metastable than the hydrated, implying that the structural reorganization during dehydration is exothermic and irreversible. Dehydrated synthetic and anhydrous biogenic ACC are similar in enthalpy. The transformation sequence observed in biomineralization could be mainly energetically driven; the first phase deposited is hydrated ACC, which then converts to anhydrous ACC, and finally crystallizes to calcite. The initial formation of ACC may be a first step in the precipitation of calcite under a wide variety of conditions, including geological CO₂ sequestration.

  5. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  6. Advances in sapphire optical fiber sensors

    NASA Technical Reports Server (NTRS)

    Wang, Anbo; Wang, George Z.; Gollapudi, Sridhar; May, Russell G.; Murphy, Kent A.; Claus, Richard O.

    1993-01-01

    We describe the development and testing of two sapphire fiber sensor designs intended for use in high temperature environments. The first is a birefringence-balanced polarimetric sapphire fiber sensor. In this sensor, two single crystal sapphire rods, acting as the birefringence sensing element, are connected to each other in such a way that the slow axis of the first rod is aligned along with the fast axis of the second rod, and the fast axis of the first rod is along the slow axis of the second rod. This sensor has been demonstrated for measurement of temperature up to 1500 C. The second is a sapphire-fiber-based intrinsic interferometric sensor. In this sensor, a length of uncoated, unclad, structural-graded multimode sapphire fiber is fusion spliced to a singlemode silica fiber to form a Fabry-Perot cavity. The reflections from the silica-to-sapphire fiber splice and the free endface of the sapphire fiber give rise to the interfering fringe output. This sensor has been demonstrated for the measurement of temperature above 1510 C, and a resolution of 0.1 C has been obtained.

  7. Effects of Cr 3+ impurity concentration on the crystallography of synthetic emerald crystals

    NASA Astrophysics Data System (ADS)

    Lee, Pei-Lun; Huang, Eugene; Lee, Jan-Shing; Yu, Shu-Cheng

    2011-06-01

    Flux method has been adopted for the synthesis of emerald crystals using PbO-V 2O 5 as a flux in order to study the crystallography of the synthetic crystals. In general, the hue of green color of emerald deepens with the addition of Cr 3+. The molar volume of the synthesized crystals was found to increase with the incorporation of Cr 2O 3 dopant. The substitution of Cr 3+ for Al 3+ in the octahedral sites of beryl results in the expansion of a-axis, while c-axis remains nearly unchanged. The maximum Cr 2O 3-content allowed in the crystal lattice of emerald has been found to be about 3.5 wt%. When the doping Cr 2O 3-content exceeds 3.5 wt%, a significant anomaly in lattice parameters starts to take place, accompanying the precipitation of an unknown phase in the emerald matrix.

  8. Enhancement of spin-wave nonreciprocity in magnonic crystals via synthetic antiferromagnetic coupling

    PubMed Central

    Di, K.; Feng, S. X.; Piramanayagam, S. N.; Zhang, V. L.; Lim, H. S.; Ng, S. C.; Kuok, M. H.

    2015-01-01

    Spin-wave nonreciprocity arising from dipole-dipole interaction is insignificant for magnon wavelengths in the sub-100 nm range. Our micromagnetic simulations reveal that for the nanoscale magnonic crystals studied, such nonreciprocity can be greatly enhanced via synthetic antiferromagnetic coupling. The nonreciprocity is manifested as highly asymmetric magnon dispersion curves of the magnonic crystals. Furthermore, based on the study of the dependence of the nonreciprocity on an applied magnetic field, the antiparallel alignment of the magnetizations is shown to be responsible for the enhancement. Our findings would be useful for magnonic and spintronics applications. PMID:25950082

  9. Transformation and crystallization energetics of synthetic and biogenic amorphous calcium carbonate

    PubMed Central

    Radha, A. V.; Forbes, Tori Z.; Killian, Christopher E.; Gilbert, P. U. P. A.; Navrotsky, Alexandra

    2010-01-01

    Amorphous calcium carbonate (ACC) is a metastable phase often observed during low temperature inorganic synthesis and biomineralization. ACC transforms with aging or heating into a less hydrated form, and with time crystallizes to calcite or aragonite. The energetics of transformation and crystallization of synthetic and biogenic (extracted from California purple sea urchin larval spicules, Strongylocentrotus purpuratus) ACC were studied using isothermal acid solution calorimetry and differential scanning calorimetry. Transformation and crystallization of ACC can follow an energetically downhill sequence: more metastable hydrated ACC → less metastable hydrated ACC⇒anhydrous ACC ∼ biogenic anhydrous ACC⇒vaterite → aragonite → calcite. In a given reaction sequence, not all these phases need to occur. The transformations involve a series of ordering, dehydration, and crystallization processes, each lowering the enthalpy (and free energy) of the system, with crystallization of the dehydrated amorphous material lowering the enthalpy the most. ACC is much more metastable with respect to calcite than the crystalline polymorphs vaterite or aragonite. The anhydrous ACC is less metastable than the hydrated, implying that the structural reorganization during dehydration is exothermic and irreversible. Dehydrated synthetic and anhydrous biogenic ACC are similar in enthalpy. The transformation sequence observed in biomineralization could be mainly energetically driven; the first phase deposited is hydrated ACC, which then converts to anhydrous ACC, and finally crystallizes to calcite. The initial formation of ACC may be a first step in the precipitation of calcite under a wide variety of conditions, including geological CO2 sequestration. PMID:20810918

  10. Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

    SciTech Connect

    Prokhorov, I. A.; Ralchenko, V. G.; Bolshakov, A. P.; Polskiy, A. V.; Vlasov, A. V.; Subbotin, I. A.; Podurets, K. M.; Pashaev, E. M.; Sozontov, E. A.

    2013-12-15

    Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.

  11. Crystals, colloids, or molecules?: Early controversies about the origin of life and synthetic life.

    PubMed

    Deichmann, Ute

    2012-01-01

    Crystals, colloids, and (macro-)molecules have played major roles in theoretical concepts and experimental approaches concerning the generation of life from the mid-19th century on. The notion of the crystallization of life out of a nonliving fluid, a special case of the doctrine of spontaneous generation, was most prominently incorporated into Schleiden's and Schwann's version of cell theory. Refutation at the end of the 19th century of spontaneous generation of life and cells, in particular by Pasteur, Remak, and Virchow, not only gave rise to the flourishing fields of microbiology and cytology, but it also opened up research on synthetic life. These approaches focused on growth and form and colloidal chemistry on the one hand, and on the specificity of organisms' macromolecules and chemical reactions on the other. This article analyzes the contribution of these approaches to synthetic life research and argues that researchers' philosophical predilections and basic beliefs have played important roles in the choice of experimental and theoretical approaches towards synthetic life. PMID:23502562

  12. Photonic detection and characterization of DNA using sapphire microspheres.

    PubMed

    Murib, Mohammed Sharif; Yeap, Weng-Siang; Martens, Daan; Bienstman, Peter; De Ceuninck, Ward; van Grinsven, Bart; Schöning, Michael J; Michiels, Luc; Haenen, Ken; Ameloot, Marcel; Serpengüzel, Ali; Wagner, Patrick

    2014-09-01

    A microcavity-based deoxyribonucleic acid (DNA) optical biosensor is demonstrated for the first time using synthetic sapphire for the optical cavity. Transmitted and elastic scattering intensity at 1510 nm are analyzed from a sapphire microsphere (radius 500 µm, refractive index 1.77) on an optical fiber half coupler. The 0.43 nm angular mode spacing of the resonances correlates well with the optical size of the sapphire sphere. Probe DNA consisting of a 36-mer fragment was covalently immobilized on a sapphire microsphere and hybridized with a 29-mer target DNA. Whispering gallery modes (WGMs) were monitored before the sapphire was functionalized with DNA and after it was functionalized with single-stranded DNA (ssDNA) and double-stranded DNA (dsDNA). The shift in WGMs from the surface modification with DNA was measured and correlated well with the estimated thickness of the add-on DNA layer. It is shown that ssDNA is more uniformly oriented on the sapphire surface than dsDNA. In addition, it is shown that functionalization of the sapphire spherical surface with DNA does not affect the quality factor (Q . ≈ 04) of the sapphire microspheres. The use of sapphire is especially interesting because this material is chemically resilient, biocompatible, and widely used for medical implants. PMID:25260868

  13. The characterization of strain, impurity content, and crush strength of synthetic diamond crystals

    SciTech Connect

    McCormick, T.L.; Jackson, W.E.; Nemanich, R.J.

    1997-01-01

    This study addresses the correlation of the macroscopic and microscopic characteristics of synthetic diamond crystals produced by high pressure, high temperature conditions. Microscopic properties were characterized using Raman spectroscopy, birefringence, and photoluminescence (PL). Macroscopic properties characterized included inclusion content and crush force. Raman measurements detected measurable stress shifts in only two samples. The PL measurements indicated an increased presence of the H3 center in areas of high strain. The absence of the H3 center and the presence of the N-V PL center was correlated to lower average crush force. A hierarchy has been developed that relates microscopic properties to average crush force. {copyright} {ital 1997 Materials Research Society.}

  14. Boron analysis by electron microprobe using MoB4C layered synthetic crystals

    USGS Publications Warehouse

    McGee, J.J.; Slack, J.F.; Herrington, C.R.

    1991-01-01

    Preliminary electron microprobe studies of B distribution in minerals have been carried out using MoB4C-layered synthetic crystals to improve analytical sensitivity for B. Any microprobe measurements of the B contents of minerals using this crystal must include analyses for Cl to assess and correct for the interference of Cl X-rays on the BK?? peak. Microprobe analyses for B can be made routinely in tourmaline and other B-rich minerals, and minor B contents also can be determined in common rock-forming minerals. Incorporation of unusually high B contents in minerals other than borosilicates has been discovered in prograde and retrograde minerals in tourmalinites from the Broken Hill district, Australia, and may reflect high B activities produced during the metamorphism of tourmaline-rich rocks. -from Authors

  15. Sapphire tube pressure vessel

    SciTech Connect

    Outwater, J.O.

    2000-05-23

    A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

  16. Sapphire tube pressure vessel

    DOEpatents

    Outwater, John O.

    2000-01-01

    A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

  17. High Resolution Sapphire Bragg Backscattering Monochromator

    SciTech Connect

    Linden, P. van der; Wille, H.-C.; Shvyd'ko, Yu. V.

    2007-01-19

    We present a temperature stabilised high resolution sapphire backscattering monochromator. The device consists of a sapphire crystal inside a cold nitrogen gas cooled, temperature stabilised chamber with a passively temperature stabilised screen. The achieved temperature stability of {+-}2mK allows for an energy resolution of {delta}E/E {<=} 10-7 at energies in the range of 30-70 keV. The device was developed for nuclear resonant scattering above 30 keV, where appropriate solutions did not exist until now.

  18. Characterization and Origin of Zonal Sapphire from Shandong Province, China

    NASA Astrophysics Data System (ADS)

    Yu, Xiaoyan; Niu, Xiaowei; Zhao, Linghao

    2015-02-01

    Shandong Province is the main producer of sapphire in China. Among the sapphire deposits discovered in China, Shandong sapphire hosted in Cenzoic basalt shows a great variety of features, especially for in zoning. These sapphire crystals are generally large in size, with depth in color and well-developed zoning. In this article, the characteristics of zonal sapphire have been studied by using petrography, trace element data from laser ablation inductively coupled with plasma-mass spectrometry, and Raman spectrometry. The trace elements variation is proposed to correspond with their parent magma composition, and the changes in growth environment of sapphire have resulted in the formation of zoning features. Sapphires from different geological settings have different characteristics. Trace elements in sapphire not only affect the color but also reflect the changes of physical and chemical conditions of sapphire growth. The concentration of impurity elements in the zoning core of Shandong sapphire is the highest, indicating that the parent magma of Shandong sapphire-host basaltic rock is rich in trace elements. Fe content is more than 2.00% in the zoning core, which causes the deepest color in the samples. It also suggests that the total content of Fe is positively correlated to the band color. The Raman spectrum shows that the spectrum peaks at 246 cm-1 caused by Fe3+ vary regularly with the band color, which shows that Fe is dominated by Fe3+ in Shandong sapphire. With the changes of forming condition, the parent magma composition has changed accordingly, which causes the zoning formation.

  19. Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate

    NASA Astrophysics Data System (ADS)

    Jang, Jongjin; Lee, Kwanhyun; Hwang, Junghwan; Jung, Joocheol; Lee, Seunga; Lee, Kyuho; Kong, Bohyun; Cho, Hyunghoun; Nam, Okhyun

    2012-12-01

    Semipolar GaN layers were grown on the m-plane hemispherical patterned sapphire substrates (HPSS) using metal organic chemical vapor deposition in order to reduce the defect density and enhance the extraction efficiency of light. The roughness values of the GaN surface grown on the planar sapphire and the HPSS were 30 and 23 nm root-mean-square roughness for a 20×20-μm2 area, respectively. The reduction of basal stacking fault density was demonstrated by x-ray rocking curve of off-axis planes and cross-sectional transmission electron microscopy. The low-temperature photoluminescence measurement showed that the near band-edge emission from HPSS semipolar GaN was approximately one order of magnitude stronger than that from planar semipolar GaN layer. The InGaN light emitting diode grown on the HPSS showed an output power approximately 1.5 times that on the planar m-sapphire.

  20. Bismuth-ceramic nanocomposites through ball milling and liquid crystal synthetic methods

    NASA Astrophysics Data System (ADS)

    Dellinger, Timothy Michael

    Three methods were developed for the synthesis of bismuth-ceramic nanocomposites, which are of interest due to possible use as thermoelectric materials. In the first synthetic method, high energy ball milling of bismuth metal with either MgO or SiO2 was found to produce nanostructured bismuth dispersed on a ceramic material. The morphology of the resulting bismuth depended on its wetting behavior with respect to the ceramic: the metal wet the MgO, but did not wet on the SiO2. Differential Scanning Calorimetry measurements on these composites revealed unusual thermal stability, with nanostructure retained after multiple cycles of heating and cooling through the metal's melting point. The second synthesis methodology was based on the use of lyotropic liquid crystals. These mixtures of water and amphiphilic molecules self-assemble to form periodic structures with nanometer-scale hydrophilic and hydrophobic domains. A novel shear mixing methodology was developed for bringing together reactants which were added to the liquid crystals as dissolved salts. The liquid crystals served to mediate synthesis by acting as nanoreactors to confine chemical reactions within the nanoscale domains of the mesophase, and resulted in the production of nanoparticles. By synthesizing lead sulfide (PbS) and bismuth (Bi) particles as proof-of-concept, it was shown that nanoparticle size could be controlled by controlling the dimensionality of the nanoreactors through control of the liquid crystalline phase. Particle size was shown to decrease upon going from three-dimensionally percolating nanoreactors, to two dimensional sheet-like nanoreactors, to one dimensional rod-like nanoreactors. Additionally, particle size could be controlled by varying the precursor salt concentration. Since the nanoparticles did not agglomerate in the liquid crystal immediately after synthesis, bismuth-ceramic nanocomposites could be prepared by synthesizing Bi nanoparticles and mixing in SiO2 particles which

  1. Secondary nucleation of gibbsite crystals from synthetic Bayer liquors: effect of alkali metal ions

    NASA Astrophysics Data System (ADS)

    Li, Jun; Prestidge, Clive A.; Addai-Mensah, Jonas

    2000-11-01

    The effect of alkali metal ions (Na + versus K +) on secondary nucleation of gibbsite ( γ-Al(OH) 3) from synthetic Bayer liquors has been investigated under seeded, isothermal, batch crystallisation conditions. The nucleation kinetics showed a fourth-order dependence upon Al(III) relative supersaturation and a strong temperature effect. An activation energy of 132 kJ mol -1, which was independent of alkali metal ion, was calculated. Secondary nucleation and subsequent crystal growth rates however, were greater in sodium than in potassium aluminate solution. The Arrhenius, pre-exponential factor was at least three times larger in sodium than in potassium aluminate solutions at equivalent crystal surface area, similar supersaturation and temperature. The results indicated that secondary nucleation of Al(OH) 3 is a chemical reaction-controlled process which is alkali metal ion-mediated. Na + ions provide a more favourable pathway than potassium ions for the formation of Al(III)-containing clusters, higher collision frequency between the species and crystal surface, and faster growth of potential secondary nuclei in the solutions.

  2. Sapphire mirror for the KAGRA gravitational wave detector

    NASA Astrophysics Data System (ADS)

    Hirose, Eiichi; Bajuk, Dan; Billingsley, GariLynn; Kajita, Takaaki; Kestner, Bob; Mio, Norikatsu; Ohashi, Masatake; Reichman, Bill; Yamamoto, Hiroaki; Zhang, Liyuan

    2014-03-01

    KAGRA, the Japanese interferometric gravitational wave detector currently under construction, will employ sapphire test masses for its cryogenic operation. Sapphire has an advantage in its higher thermal conductivity near the operating temperature 20 K compared to fused silica used in other gravitational wave detectors, but there are some uncertain properties for the application such as hardness, optical absorption, and birefringence. We introduce an optical design of the test masses and our recent R&D results to address the above properties. Test polish of sapphire substrate has especially proven that specifications on the surface are sufficiently met. Recent measurements of absorption and inhomogeneity of the refractive index of the sapphire substrate indicate that the other properties are also acceptable to use sapphire crystal as test masses.

  3. Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Ohba, Yasuo; Gotoda, Toru; Kaneko, Kei

    2007-01-01

    Low current laser operation at 405 nm has been demonstrated for the first time for the devices fabricated on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using a high-temperature-grown single-crystal AlN buffer. The thick optical guiding layers were adopted to improve optical confinement. The device structure was the 2-μm-wide ridge-stripe type without facet coating. The minimum threshold current and current density were 60 mA and 3.8 kA/cm 2 for cavity lengths of 500 mm and 1 mm, respectively. These data were comparable to those reported using the special dislocation reduction techniques. The threshold current density linearly decreases with decreasing inverse of cavity length. It was expected that the low threshold current density ranging from 1 to 2 kA/cm 2 could be realized by adapting high reflection coating for laser facets. This expected current density was comparable to values realized for devices grown on the thick freestanding GaN as substrates. These findings support the promising potential of the HT-AlN buffer technique for production of advanced short-wavelength light-emitting devices on sapphire substrates.

  4. Damage testing of sapphire and Ti: sapphire laser materials

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Diffusion bonded sapphire and Ti (Titanium). Sapphire laser materials that will be damage tested to determine if there is an increase in damage threshold. Photographed in building 1145, photographic studio.

  5. Synthetical bone-like and biological hydroxyapatites: a comparative study of crystal structure and morphology.

    PubMed

    Marković, Smilja; Veselinović, Ljiljana; Lukić, Miodrag J; Karanović, Ljiljana; Bračko, Ines; Ignjatović, Nenad; Uskoković, Dragan

    2011-08-01

    Phase composition, crystal structure and morphology of biological hydroxyapatite (BHAp) extracted from human mandible bone, and carbonated hydroxyapatite (CHAp), synthesized by the chemical precipitation method, were studied by x-ray powder diffraction (XRD), Fourier transform infrared (FTIR) and Raman (R) spectroscopy techniques, combined with transmission electron microscopy (TEM). Structural and microstructural parameters were determined through Rietveld refinement of recorded XRD data, performed using the FullProf computing program, and TEM. Microstructural analysis shows anisotropic extension along the [00l] crystallographic direction (i.e. elongated crystallites shape) of both investigated samples. The average crystallite sizes of 10 and 8 nm were estimated for BHAp and CHAp, respectively. The FTIR and R spectroscopy studies show that carbonate ions substitute both phosphate and hydroxyl ions in the crystal structure of BHAp as well as in CHAp, indicating that both of them are mixed AB-type of CHAp. The thermal behaviour and carbonate content were analysed using thermogravimetric and differential thermal analysis. The carbonate content of about 1 wt.% and phase transition, at near 790 °C, from HAp to β-tricalcium phosphate were determined in both samples. The quality of synthesized CHAp powder, particularly, the particle size distribution and uniformity of morphology, was analysed by a particle size analyser based on laser diffraction and field emission scanning electron microscopy, respectively. These data were used to discuss similarity between natural and synthetic CHAp. Good correlation between the unit cell parameters, average crystallite size, morphology, carbonate content and crystallographic positions of carbonate ions in natural and synthetic HAp samples was found. PMID:21659698

  6. General Synthetic Strategy for Hollow Hybrid Microspheres through a Progressive Inward Crystallization Process.

    PubMed

    Yang, Li-Ping; Lin, Xi-Jie; Zhang, Xing; Zhang, Wei; Cao, An-Min; Wan, Li-Jun

    2016-05-11

    Hollow hybrid microspheres have found great potential in different areas, such as drug delivery, nanoreactors, photonics, and lithium-ion batteries. Here, we report a simple and scalable approach to construct high-quality hollow hybrid microspheres through a previously unexplored growth mechanism. Starting from uniform solid microspheres with low crystallinity, we identified that a hollowing process can happen through the progressive inward crystallization process initiated on the particle surface: the gradual encroachment of the crystallization frontline toward the core leads to the depletion of the center and forms the central cavity. We showed that such a synthetic platform was versatile and can be applicable for a large variety of materials. By using the production of Li4Ti5O12-carbon hollow hybrid microspheres as an example, we demonstrated that high-performance anode materials could be achieved through synthesis and structure control. We expect that our findings offer new perspectives in different areas ranging from materials chemistry, energy storage devices, catalysis, to drug delivery. PMID:27096883

  7. Crystallization of synthetic coal-petcoke slag mixtures simulating those encountered in entrained bed slagging gasifiers

    SciTech Connect

    Jinichiro Nakano; Seetharaman Sridhar; Tyler Moss; James Bennett; Kyei-Sing Kwong

    2009-09-15

    Commercial entrained bed slagging gasifiers use a carbon feedstock of coal, petcoke, or combinations of them to produce CO and H{sub 2}. These carbon sources contain mineral impurities that liquefy during gasification and flow down the gasification sidewall, interacting with the refractory linear and solidifying in the cooler zones of the gasifier. Proper slag flow is critical to good gasifier operation. A hot-stage confocal scanning laser microscope (CSLM) was used to analyze the kinetic behavior of slag crystallization for a range of synthetic coal-petcoke mixtures. On the basis of the observed precipitation during cool down studies in the 1200-1700{sup o}C temperature range, a time-temperature-transformation (TTT) diagram was created. The crystallization studies were conducted with a CO/CO{sub 2} (=1.8) corresponding to a gasification PO{sub 2} of approximately 10-8 atm at 1500{sup o}C. Ash chemistries were chosen such that they correspond to coal-petcoke feedstock mixtures with coal ash amounts of 0, 10, 30, 50, 70, and 100% (by weight), with the balance being petcoke ash. The TTT diagram exhibited two crystallization areas, one above and one below 1350{sup o}C. At the nose of the higher temperature curves, karelianite (V{sub 2}O{sub 3}) crystallization occurred and was fastest for a 30% coal-petcoke ash mixture. The second nose was located below 1350{sup o}C and had spinel-type phases that formed at 1200{sup o}C, in which preferred atomic occupation at the octahedral and tetrahedral sites varied depending upon the ash composition. At 1200{sup o}C, an Al-rich spinel formed for 100% coal slag and a Fe-rich spinel formed in petcoke-enriched slags. The addition of petcoke ash to coal ash promoted crystallization in the slag, with additional crystalline phases, such as V-rich spinel, forming at the lower temperatures. These phases were not predicted using commercially available databases. 30 refs., 18 figs.

  8. Study of high-temperature Smart Cut™: Application to silicon-on-sapphire films and to thin foils of single crystal silicon

    NASA Astrophysics Data System (ADS)

    Meyer, Raphaël; Kononchuck, Oleg; Moriceau, Hubert; Lemiti, Mustapha; Bruel, Michel

    2016-01-01

    Two novel processes of elaboration of silicon thin films and silicon foils are proposed, based on the knowledge brought from the Smart Cut™. The first relies on the laser-beam annealing of an implanted silicon wafer in order to induce a separation layer within the implanted wafer and a transfer upon a transparent wafer. The second consists in depositing a layer of liquid silicon upon an implanted silicon wafer and to form a silicon foil by liquid phase epitaxial growth that can be separated from the substrate by Smart Cut™. The separation kinetics of an implanted silicon wafer is characterized for temperature between 450 °C and 700 °C, considering doses of implantation from 3.5 ∗ 1016 H cm-2 to 1.0 ∗ 1017 H cm-2. The out-diffusion of hydrogen is studied by Energy Recoil Detection Analysis and a model of diffusion of hydrogen in implanted silicon is proposed. Based on this analysis, a model for the kinetics of splitting at high temperature is established. Smart Cut™ separation is demonstrated for temperature up to 1250 °C, considering an implanted silicon wafer bonded with a sapphire wafer, through which a laser beam anneals the structure. The kinetics of separation by laser beam annealing is characterized and compared to the kinetics established between 450 °C and 700 °C. The roughness of the silicon on sapphire film is characterized by Atomic Force Microscopy and a transfer is realized considering an implanted silicon bonded with a glass wafer of 200 mm of diameter. Finally, this article presents results of liquid silicon deposition onto an implanted silicon substrate. These results demonstrate the possibility to detach the film grown by liquid phase epitaxy and the upper part of the implanted substrate by Smart Cut™. Electron Backscattering Diffraction Pattern analysis is considered in order to demonstrate the occurrence of epitaxy of the deposited liquid onto the implanted substrate.

  9. The kinetics of desilication of synthetic spent Bayer liquor seeded with cancrinite and cancrinite/sodalite mixed-phase crystals

    NASA Astrophysics Data System (ADS)

    Barnes, Mark C.; Addai-Mensah, Jonas; Gerson, Andrea R.

    1999-04-01

    Isothermal, batch desilication kinetics of synthetic, sodium aluminate solution (spent Bayer liquor) via cancrinite and cancrinite/sodalite mixed-phase crystal growth, have been studied under conditions at which sodium aluminosilicate scale forms at the surfaces of steel heat exchangers of alumina plant. Seeding with the pure cancrinite and mixed-phase crystals results in the suppression of scale formation and a faster rate of liquor desilication in comparison with its sodalite dimorph. Cancrinite seed crystals prepared from NO -3-rich solutions exhibited crystal growth mechanism and kinetic behaviour different from dimorphic mixed-phase crystals prepared from CO 2-3-rich solutions, when both were used to desilicate CO 2-3-rich spent Bayer liquor. The rate of desilication due to crystal growth on CO 2-3-cancrinite/sodalite mixed phase crystals followed a second-order dependence on the relative supersaturation of SiO 2. An activation energy of 52 kJ mol -1 was estimated for the crystal growth process. For desilication kinetics involving NO -3-cancrinite seed crystal growth, a third-order dependence on relative supersaturation of SiO 2 and an activation energy of 63 kJ mol -1 were obtained.

  10. Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry

    SciTech Connect

    Di Venanzio, C.; Marinelli, Marco; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Falco, M. D.; Bagala, P.; Santoni, R.; Pimpinella, M.

    2013-02-15

    Purpose: To investigate the dosimetric properties of synthetic single crystal diamond based Schottky diodes under irradiation with therapeutic electron beams from linear accelerators. Methods: A single crystal diamond detector was fabricated and tested under 6, 8, 10, 12, and 15 MeV electron beams. The detector performances were evaluated using three types of commercial detectors as reference dosimeters: an Advanced Markus plane parallel ionization chamber, a Semiflex cylindrical ionization chamber, and a p-type silicon detector. Preirradiation, linearity with dose, dose rate dependence, output factors, lateral field profiles, and percentage depth dose profiles were investigated and discussed. Results: During preirradiation the diamond detector signal shows a weak decrease within 0.7% with respect to the plateau value and a final signal stability of 0.1% (1{sigma}) is observed after about 5 Gy. A good linear behavior of the detector response as a function of the delivered dose is observed with deviations below {+-}0.3% in the dose range from 0.02 to 10 Gy. In addition, the detector response is dose rate independent, with deviations below 0.3% in the investigated dose rate range from 0.17 to 5.45 Gy/min. Percentage depth dose curves obtained from the diamond detector are in good agreement with the ones from the reference dosimeters. Lateral beam profile measurements show an overall good agreement among detectors, taking into account their respective geometrical features. The spatial resolution of solid state detectors is confirmed to be better than that of ionization chambers, being the one from the diamond detector comparable to that of the silicon diode. A good agreement within experimental uncertainties was also found in terms of output factor measurements between the diamond detector and reference dosimeters. Conclusions: The observed dosimetric properties indicate that the tested diamond detector is a suitable candidate for clinical electron beam dosimetry.

  11. Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

    PubMed Central

    Yamauchi, Ryosuke; Hamasaki, Yosuke; Shibuya, Takuto; Saito, Akira; Tsuchimine, Nobuo; Koyama, Koji; Matsuda, Akifumi; Yoshimoto, Mamoru

    2015-01-01

    Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film. Sapphire (single-crystalline α-Al2O3) is commonly used in industry as a thin-film crystal-growth substrate, and functional thin-film materials deposited on sapphire substrates have found industrial applications. However, while sapphire is a single crystal, two types of atomic planes exist in accordance with step height. Here we discuss the need to consider the lattice mismatch for each of the sapphire atomic layers. Furthermore, through cross-sectional transmission electron microscopy analysis, we demonstrate the uniepitaxial growth of cubic crystalline thin films on bistepped sapphire (0001) substrates. PMID:26402241

  12. Crystal and molecular structure and spectroscopic behavior of isotypic synthetic analogs of the oxalate minerals stepanovite and zhemchuzhnikovite

    NASA Astrophysics Data System (ADS)

    Piro, Oscar E.; Echeverría, Gustavo A.; González-Baró, Ana C.; Baran, Enrique J.

    2016-04-01

    The crystal structure of synthetic stepanovite, Na[Mg(H2O)6][Fe(C2O4)3]·3H2O, and zhemchuzhnikovite, Na[Mg(H2O)6][Al0.55Fe0.45(C2O4)3]·3H2O, has been determined by single-crystal X-ray diffraction methods. The compounds are isotypic to each other and to the previously reported Na[Mg(H2O)6][M(C2O4)3]·3H2O (M: Cr, Al). They crystallize in the trigonal P3 c1 space group with Z = 6 molecules per unit cell and (hexagonal axes) a = 17.0483(4), c = 12.4218(4) Å for the iron compound, and a = 16.8852(5), c = 12.5368(5) Å for the Al/Fe solid solution. Comparison of our crystallographic results with previous X-ray diffraction and chemical data of type stepanovite and zhemchuzhnikovite minerals provides compelling evidence that these natural materials possess the same crystal and molecular structure as their synthetic counterparts. It is shown that the originally reported unit cell for stepanovite represents a pronounced sub-cell and that the correct unit cell and space group are based on weak superstructure reflections. The infrared and Raman spectra of both synthetic analogs were also recorded and are briefly discussed.

  13. Ion Milling of Sapphire

    NASA Technical Reports Server (NTRS)

    Gregory, Don A.; Herren, Kenneth A.

    2004-01-01

    The ion milling of sapphire is a complicated operation due to several characteristics of the material itself. It is a relatively hard transparent nonconductive crystalline material that does not transfer heat nearly as well as metals that have been successfully ion milled in the past. This investigation involved designing an experimental arrangement, using existing ion milling equipment, as the precursor to figuring the surface of sapphire and other insulating optical materials. The experimental arrangement employs a laser probe beam to constantly monitor the stresses being induced in the material, as it is being ion milled. The goal is to determine if the technique proposed would indeed indicate the stress being induced in the material so that these stresses can be managed to prevent failure of the optic.

  14. Evolution of the sapphire industry: Rubicon Technology and Gavish

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  15. Refinement of the crystal structures of synthetic nickel- and cobalt-bearing tourmalines

    NASA Astrophysics Data System (ADS)

    Rozhdestvenskaya, I. V.; Setkova, T. V.; Vereshchagin, O. S.; Shtukenberg, A. G.; Shapovalov, Yu. B.

    2012-01-01

    The crystal structures of synthetic tourmalines with a unique composition containing 3 d elements (Ni, Fe, and Co) have been refined: (Ca0.12▭0.88)(Al1.69Ni{0.81/2+}Fe{0.50/2+})(Al5.40Fe{0.60/3+})(Si5.82Al0.18O18)(BO3)3(OH)3.25O0.75 I, a = 15.897(5), c = 7.145(2) Å, V = 1564(1) Å; Na0.91(Ni{1.20/2+}Cr{0.96/3+}Al0.63Fe{0.18/2+}Mg0.03)(Al4.26Ni{1.20/2+}Cr{0.48/3+}Ti0.06)(Si5.82Al0.18)O18(BO3)3(OH)3.73O0.27 II, a = 15.945(5), c = 7.208(2) Å, V = 1587(1) Å3 and Na0.35(Al1.80Co{1.20/2+})(Al5.28Co{0.66/2+}Ti0.06)(Si5.64B0.36)O18(BO3)3(OH)3.81O0.19 III, a = 15.753(8), c = 7.053(3) Å, V = 1516(2) Å3. The reliability factors are R 1 = 0.038-0.057 and wR 2 = 0.041-0.060. It is found that 3 d elements occupy both Y- and Z positions in all structures. The excess positive charge is compensated for due to the incorporation of divalent oxygen anions into the O3(V)+O1(W) positions.

  16. Optimization of the structural quality of sapphire rods grown by the Stepanov method in a reducing atmosphere

    SciTech Connect

    Kryvonosov, Ye. V.; Konevskiy, P. V. Lytvynov, L. A.; Tkachenko, V. F.

    2015-03-15

    Historically, the Stepanov method has been used for growing long shaped sapphire crystals (rods, tubes, and ribbons) for practical design. The recent intense development of this technique was stimulated by sapphire applications in optics and electronics; thus, the optical and structural quality of these crystals is of great importance. The results of studying the structural quality of sapphire rods up to 18 mm in diameter grown under optimized conditions are reported.

  17. Epitaxial growth of hexagonal silicon polytypes on sapphire

    SciTech Connect

    Pavlov, D. A.; Pirogov, A. V. Krivulin, N. O.; Bobrov, A. I.

    2015-01-15

    The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the 9R silicon polytype.

  18. TH-C-19A-06: Measurements with a New Commercial Synthetic Single Crystal Diamond Detector

    SciTech Connect

    Laub, W; Crilly, R

    2014-06-15

    Purpose: A commercial version of a synthetic single crystal diamond detector in a Scottky diode configuration was recently released as the new type 60019 microDiamond detector (PTW-Freiburg). In this study we investigate the dosimetric properties of this detector and explore if the use of the microDiamond detector can be expanded to high energy photon beams of up to 15MV and to large field measurements. Methods: Energy dependency was investigated. Photon and electron depth-dose curves were measured. Photon PDDs were measured with the Semiflex type 31010, microLion type 31018, P-Diode type 60016, SRS Diode type 60018, and the microDiamond type 60019 detector. Electron depth-dose curves were measured with a Markus chamber type 23343, an E Diode type 60017 and the microDiamond type 60019 detector (all PTW-Freiburg). Profiles were measured with the E-Diode and microDiamond at dose maximum depths. Results: The microDiamond detector shows no energy dependence in high energy photon or electron dosimetry. Electron PDD measurements with the E-Diode and microDiamond are in good agreement except for the bremsstrahlungs region, where values are about 0.5 % lower with the microDiamond detector. Markus detector measurements agree with E-Diode measurements in this region. For depths larger than dmax, depth-dose curves of photon beams measured with the microDiamond detector are in close agreement to those measured with the microLion detector for small fields and with those measured with a Semiflex 0.125cc ionization chamber for large fields. For profile measurements, microDiamond detector measurements agree well with microLion and P-Diode measurements in the high-dose region and the penumbra region. For areas outside the open field, P-Diode measurements are about 0.5–1.0% higher than microDiamond and microLion measurements. Conclusion: The investigated diamond detector is suitable for a wide range of applications in high energy photon and electron dosimetry and is interesting

  19. The growth of an epitaxial Mg Al spinel layer on sapphire by solid-state reactions

    NASA Astrophysics Data System (ADS)

    Liu, Che-Ming; Chen, Jyh-Chen; Chen, Chun-Jen

    2005-11-01

    In this work an epitaxial Mg-Al spinel layer was successfully grown on a sapphire single crystal surface by solid-state reactions. An Mg film (15 μm) was sputtered onto the sapphire crystal using RF magnetron sputtering. An epitaxial Mg-Al spinel layer was formed on the sapphire surface; an MgO layer was formed on top of the spinel layer by solid-state reactions that occurred around 1300-1600 °C, in an air atmosphere. When the reaction time was lengthened to over 30 h at 1600 °C, these layers were almost completely transformed into an epitaxial Mg-Al spinel layer. The thickness of the epitaxial layer could be controlled by the length of the reaction time and the temperature. The results of X-ray diffraction analysis indicate that the orientation of the MgO and the spinel growth was dependent on the plane of the sapphire, that is (0 0 0 1) sapphire||(1 1 1) spinel||(1 1 1) MgO and (1 1 2¯ 0) sapphire||(1 1 1) spinel||(1 1 1) MgO. It was confirmed that the in-plane orientation of the spinel with respect to the C- and A-sapphire surface was [1 1¯ 0 0] sapphire||[1¯ 1 0] spinel, [1 1 2¯ 0] sapphire||[1¯ 1¯ 2] spinel and [1 0 1¯ 0] sapphire||[1¯ 1 0] spinel, [0 0 0 1] sapphire||[1¯ 1¯ 2] spinel, and there would be (1¯ 1 0)-oriented spinel growth on the M-plane sapphire substrate.

  20. Morphology of synthetic chrysoberyl and alexandrite crystals: Analysis of experimental data and theoretical modeling

    NASA Astrophysics Data System (ADS)

    Gromalova, N. A.; Eremin, N. N.; Dorokhova, G. I.; Urusov, V. S.

    2012-07-01

    A morphological analysis of chrysoberyl and alexandrite crystals obtained by flux crystallization has been performed. Seven morphological types of crystals are selected. The surface energies of the faces of chrysoberyl and alexandrite crystals and their isostructural analogs, BeCr2O4 and BeFe2O4, have been calculated by atomistic computer modeling using the Metadise program. A "combined" approach is proposed which takes into account both the structural geometry and the surface energy of the faces and thus provides better agreement between the theoretical and experimentally observed faceting of chrysoberyl and alexandrite crystals.

  1. Raman Gain Coefficient of Barium Nitrate Measured for the Spectral Region of TI:SAPPHIRE Laser

    NASA Astrophysics Data System (ADS)

    Lisinetskii, V. A.; Mishkel', I. I.; Chulkov, R. V.; Grabtchikov, A. S.; Apanasevich, P. A.; Eichler, H.-J.; Orlovich, V. A.

    We report the measurements of the Raman gain coefficient for a barium nitrate crystal in the spectral region of a Ti:Sapphire laser using Raman amplification. The experimentally-obtained data are well described by the known empirical formula.

  2. Clinical radiation therapy measurements with a new commercial synthetic single crystal diamond detector.

    PubMed

    Laub, Wolfram U; Crilly, Richard

    2014-01-01

    A commercial version of a synthetic single crystal diamond detector (SCDD) in a Schottky diode configuration was recently released as the new type 60019 microDiamond detector (PTW-Freiburg, Germany). In this study we investigate the dosimetric properties of this detector to independently confirm that findings from the developing group of the SCDDs still hold true for the commercial version of the SCDDs. We further explore if the use of the microDiamond detector can be expanded to high-energy photon beams of up to 15 MV and to large field measure- ments. Measurements were performed with an Elekta Synergy linear accelerator delivering 6, 10, and 15 MV X-rays, as well as 6, 9, 12, 15, and 20 MeV electron beams. The dependence of the microdiamond detector response on absorbed dose after connecting the detector was investigated. Furthermore, the dark current of the diamond detector was observed after irradiation. Results are compared to similar results from measurements with a diamond detector type 60003. Energy dependency was investigated, as well. Photon depth-dose curves were measured for field sizes 3 × 3, 10 × 10, and 30 × 30 cm2. PDDs were measured with the Semiflex type 31010 detector, microLion type 31018 detector, P Diode type 60016, SRS Diode type 60018, and the microDiamond type 60019 detector (all PTW-Freiburg). Photon profiles were measured at a depth of 10 cm. Electron depth-dose curves normalized to the dose maximum were measured with the 14 × 14 cm2 electron cone. PDDs were measured with a Markus chamber type 23343, an E Diode type 60017 and the microDiamond type 60019 detector (all PTW-Freiburg). Profiles were measured with the E Diode and microDiamond at half of D90, D90, D70, and D50 depths and for electron cone sizes of 6 × 6 cm2, 14 × 14 cm2, and 20 × 20 cm2. Within a tol- erance of 0.5% detector response of the investigated detector was stable without any preirradiation. After preirradition with approximately 250 cGy the detector response

  3. Optical and crystalline characteristics of large EFG sapphire sheet

    NASA Astrophysics Data System (ADS)

    Bates, Herbert E.; Jones, Christopher D.; Locher, John W.

    2005-05-01

    Edge Defined Film-fed Growth (EFGTM) Saphikon® sapphire crystals have been grown as large, thick sheet. The sheet is then precision-polished and coated into an infrared or laser transmission compatible window. The sapphire windows are subsequently assembled into a multi-panel configuration for advanced targeting, navigation, or reconnaissance applications. As future aerospace programs will require windows with larger apertures, material characteristics and uniformity such as refractive index homogeneity will increase in importance. Optical measurements, x-ray topography data and rocking curve analysis are presented The crystalline properties as they relate to refractive index inhomogeneity and wave front distortion are discussed.

  4. Herbal preparations affect the kinetic factors of calcium oxalate crystallization in synthetic urine: implications for kidney stone therapy.

    PubMed

    Rodgers, Allen L; Webber, Dawn; Ramsout, Ronica; Gohel, Mayur Danny I

    2014-06-01

    Herbal remedies are increasingly being considered as suitable long-term treatments for renal dysfunction. The objective of the present study was to investigate the effect of some herbal extracts, all previously identified in published studies as influencing kidney stone formation, on the crystallization characteristics of calcium oxalate (CaOx) in synthetic urine (SU). Five herbal extracts were selected for the study: Folium pyrrosiae, Desmodium styracifolium, Phyllanthus niruri, Orthosiphon stamineus and Cystone(®). Concentrated stock solutions of each herbal extract were prepared and were tested at their recommended dosages in in vitro crystallization studies in SU. CaOx crystallization experiments were performed in which the metastable limit (MSL), average particle size, and nucleation and growth rates were determined. The CaOx MSL of SU was unaltered by the five herbal extracts. Three of the herbs (Desmodium styracifolium, Orthosiphon stamineus and Cystone(®)) significantly reduced the average particle size of precipitated crystals relative to undosed SU. All of the extracts increased the rate of nucleation and decreased the rate of growth significantly in SU. Cystone(®) showed the greatest effect on the measured risk factors. It is concluded that all of the herbs have the potential to serve as inhibitors of calcium oxalate stone formation and warrant investigation in clinical trials. PMID:24648109

  5. Cleaved thioredoxin fusion protein enables the crystallization of poorly soluble ERα in complex with synthetic ligands

    PubMed Central

    Cura, Vincent; Gangloff, Monique; Eiler, Sylvia; Moras, Dino; Ruff, Marc

    2008-01-01

    The ligand-binding domain (LBD) of human oestrogen receptor α was produced in Escherichia coli as a cleavable thioredoxin (Trx) fusion in order to improve solubility. Crystallization trials with either cleaved and purified LBD or with the purified fusion protein both failed to produce crystals. In another attempt, Trx was not removed from the LBD after endoproteolytic cleavage and its presence promoted nucleation and subsequent crystal growth, which allowed the structure determination of two different LBD–ligand–coactivator peptide complexes at 2.3 Å resolution. This technique is likely to be applicable to other low-solubility proteins. PMID:18097104

  6. Sapphire Fiber Optics Sensors for Engine Test Instrumentation

    SciTech Connect

    Janney, MA

    2003-09-19

    This document is the final report for the Cooperative Research and Development Agreement (CRADA) between UT-Battelle and Prime Photonics, Inc. The purpose of this CRADA was to improve the properties of single crystal sapphire optical fibers for sensor applications. A reactive coating process was developed to form a magnesium aluminate spinel cladding on sapphire optical fibers. The resulting clad fiber had a numerical aperture, NA, of 0.09 as compared with 0.83 for the unclad fiber, dramatically enhancing its usefulness for sensor applications. Because the process allows one to control the diameter of the sapphire core within the fiber, it may be possible using this technology to develop waveguides that approach single-mode transmission character.

  7. Spherical-sapphire-based whispering gallery mode resonator thermometer

    NASA Astrophysics Data System (ADS)

    Yu, Lili; Fernicola, V.

    2012-09-01

    A novel microwave whispering gallery mode (WGM) resonator based on a spherical sapphire crystal was developed at INRIM and its use as a thermometer was tested. The temperature dependence of the WGM frequencies was studied and the most promising resonance near to 13.6 GHz, with a loaded quality factor as large as 82 000, was carefully investigated. Its potential use in thermometry was evaluated through a study of its main metrological characteristics, such as the temperature sensitivity, the frequency stability, the repeatability, and the resolution at several temperatures over the temperature range -40 °C to 85 °C. Finally, the INRIM spherical sapphire thermometer was compared with the NIST SWGT, a dielectric thermometer based on a cylindrical sapphire resonator [V. B. Braginsky, V. S. Ilchenko, and Kh. S. Bagdassarov, Phys. Lett. A 120(3), 300 (1987), 10.1016/0375-9601(87)90676-1].

  8. Spherical-sapphire-based whispering gallery mode resonator thermometer.

    PubMed

    Yu, Lili; Fernicola, V

    2012-09-01

    A novel microwave whispering gallery mode (WGM) resonator based on a spherical sapphire crystal was developed at INRIM and its use as a thermometer was tested. The temperature dependence of the WGM frequencies was studied and the most promising resonance near to 13.6 GHz, with a loaded quality factor as large as 82 000, was carefully investigated. Its potential use in thermometry was evaluated through a study of its main metrological characteristics, such as the temperature sensitivity, the frequency stability, the repeatability, and the resolution at several temperatures over the temperature range -40 °C to 85 °C. Finally, the INRIM spherical sapphire thermometer was compared with the NIST SWGT, a dielectric thermometer based on a cylindrical sapphire resonator [V. B. Braginsky, V. S. Ilchenko, and Kh. S. Bagdassarov, Phys. Lett. A 120(3), 300 (1987)]. PMID:23020404

  9. Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities

    NASA Astrophysics Data System (ADS)

    Oh, Dong-Sub; Jang, Jong-Jin; Nam, Okhyun; Song, Keun-Man; Lee, Sung-Nam

    2011-07-01

    We investigated the anisotropic optical and structural properties of semipolar (11-22) InGaN-based green light emitting diodes (LEDs) grown on GaN templates with the different crystallographic properties. By introducing the N 2-GaN as a seed layer grown at a N 2 atmosphere, the full width at half maximum (FWHMs) of X-ray rocking curves (XRCs) for semipolar GaN templates were decreased from 1331 to 727 arcsec and from 1955 to 1076 arcsec with the incident beam directions of [11-2-3] and [1-100], respectively. It was found that the interfacial qualities of InGaN/GaN quantum wells (QWs) would be improved by reducing the FWHMs of XRCs with regardless of crystallographic directions. However, the thickness uniformity of InGaN QWs was significantly deteriorated for the direction of [11-2-3] rather than [1-100]. In addition, the EL intensity of semipolar green LEDs would be increased by enhancing the crystal quality of semipolar GaN template, which could also be resulted in the formation of abrupt interface and the enhancement of homogeneity at InGaN/GaN QWs.

  10. Combined protein construct and synthetic gene engineering for heterologous protein expression and crystallization using Gene Composer

    SciTech Connect

    Raymond, Amy; Lovell, Scott; Lorimer, Don; Walchli, John; Mixon, Mark; Wallace, Ellen; Thompkins, Kaitlin; Archer, Kimberly; Burgin, Alex; Stewart, Lance

    2009-12-01

    With the goal of improving yield and success rates of heterologous protein production for structural studies we have developed the database and algorithm software package Gene Composer. This freely available electronic tool facilitates the information-rich design of protein constructs and their engineered synthetic gene sequences, as detailed in the accompanying manuscript. In this report, we compare heterologous protein expression levels from native sequences to that of codon engineered synthetic gene constructs designed by Gene Composer. A test set of proteins including a human kinase (P38{alpha}), viral polymerase (HCV NS5B), and bacterial structural protein (FtsZ) were expressed in both E. coli and a cell-free wheat germ translation system. We also compare the protein expression levels in E. coli for a set of 11 different proteins with greatly varied G:C content and codon bias. The results consistently demonstrate that protein yields from codon engineered Gene Composer designs are as good as or better than those achieved from the synonymous native genes. Moreover, structure guided N- and C-terminal deletion constructs designed with the aid of Gene Composer can lead to greater success in gene to structure work as exemplified by the X-ray crystallographic structure determination of FtsZ from Bacillus subtilis. These results validate the Gene Composer algorithms, and suggest that using a combination of synthetic gene and protein construct engineering tools can improve the economics of gene to structure research.

  11. Single-crystal structure and Raman spectroscopy of synthetic titanite analog CaAlSiO4F

    NASA Astrophysics Data System (ADS)

    Krüger, Hannes; Többens, Daniel M.; Tropper, Peter; Haefeker, Udo; Kahlenberg, Volker; Fuchs, Martin R.; Olieric, Vincent; Troitzsch, Ulrike

    2015-10-01

    Synthetic CaAlSiO4F, the Al-F analog of titanite, has been investigated using single-crystal synchrotron diffraction experiments at Beamline X06DA (Swiss Light Source, Paul Scherrer Institute, Villigen, Switzerland) and Raman spectroscopy. The presented structural model with 40 parameters was refined against 506 unique reflections to a final R o b s of 0.026 (space group A2/ a, a = 6.9120(11), b = 8.5010(10), c = 6.435(2) Å, β = 114.670(11)°, and Z = 4) and exhibits less distorted coordination polyhedra than earlier models from powder data. Vibrational spectra were calculated in harmonic approximation at the Γ point from fully relaxed energy optimisations of the crystal structure, using 3D-periodic density functional theory with Gaussian basis sets and the software CRYSTAL06. The lattice parameters of the fully relaxed structure were in good agreement with the experimental values, with the calculated values 0.8 ± 0.4 % too large; the monoclinic angle was calculated 0.4° too large. The agreement of the calculated Raman frequencies with the observed ones was very good, with standard deviation ±3 cm-1 and maximum deviations of ±7 cm-1. Furthermore, a detailed discussion of the atomic displacements associated with each Raman mode is given.

  12. Miniature Sapphire Acoustic Resonator - MSAR

    NASA Technical Reports Server (NTRS)

    Wang, Rabi T.; Tjoelker, Robert L.

    2011-01-01

    A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to

  13. Evaluation of the dosimetric properties of a synthetic single crystal diamond detector in high energy clinical proton beams

    SciTech Connect

    Mandapaka, A. K.; Ghebremedhin, A.; Patyal, B.; Marinelli, Marco; Prestopino, G.; Verona, C.; Verona-Rinati, G.

    2013-12-15

    Purpose: To investigate the dosimetric properties of a synthetic single crystal diamond Schottky diode for accurate relative dose measurements in large and small field high-energy clinical proton beams.Methods: The dosimetric properties of a synthetic single crystal diamond detector were assessed by comparison with a reference Markus parallel plate ionization chamber, an Exradin A16 microionization chamber, and Exradin T1a ion chamber. The diamond detector was operated at zero bias voltage at all times. Comparative dose distribution measurements were performed by means of Fractional depth dose curves and lateral beam profiles in clinical proton beams of energies 155 and 250 MeV for a 14 cm square cerrobend aperture and 126 MeV for 3, 2, and 1 cm diameter circular brass collimators. ICRU Report No. 78 recommended beam parameters were used to compare fractional depth dose curves and beam profiles obtained using the diamond detector and the reference ionization chamber. Warm-up/stability of the detector response and linearity with dose were evaluated in a 250 MeV proton beam and dose rate dependence was evaluated in a 126 MeV proton beam. Stem effect and the azimuthal angle dependence of the diode response were also evaluated.Results: A maximum deviation in diamond detector signal from the average reading of less than 0.5% was found during the warm-up irradiation procedure. The detector response showed a good linear behavior as a function of dose with observed deviations below 0.5% over a dose range from 50 to 500 cGy. The detector response was dose rate independent, with deviations below 0.5% in the investigated dose rates ranging from 85 to 300 cGy/min. Stem effect and azimuthal angle dependence of the diode signal were within 0.5%. Fractional depth dose curves and lateral beam profiles obtained with the diamond detector were in good agreement with those measured using reference dosimeters.Conclusions: The observed dosimetric properties of the synthetic single

  14. Growth of Mg-Al spinel microcrystals on a sapphire surface using a solution-precipitation method

    NASA Astrophysics Data System (ADS)

    Liu, Che-Ming; Chen, Jyh-Chen

    2006-07-01

    A solution-precipitation process was used to grow Mg-Al spinel microcrystals at etched pits in a c-axial sapphire single crystal surface. In the proposed innovative growth process, the etched pits function as heterogeneous nucleation points. The quenching and aging treatment causes Mg ions to diffuse into the sapphire crystal, precipitating as microcrystals at the etched pits. We found the precipitated crystals to be (111) Mg-Al spinels with a triangular pyramidal shape.

  15. LASE Ti: Sapphire Laser

    NASA Technical Reports Server (NTRS)

    1995-01-01

    In the photo, Mr. Leroy F. Matthews (Lockheed Engineering & Sciences Co.) is connecting the Thermal Control Unit cables in preparing the Lidar Atmospheric Sensing Experiment (LASE) Instrument for integration into a NASA/ER-2 aircraft for a field mission. LASE is the first fully-engineered, autonomous differential Absorption Lidar (DIAL) System for the measurement of water vapor, aerosol and cloud in the troposphere. LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150 mJ/pulse. The laser beam is seeded to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere with accuracy having less than 6% of error. No other instrument can provide the spatial coverage and accuracy of LASE. Water vapor is the most radiative active gas in the troposphere, and the lack of understanding about its distribution provides one of the largest uncertainties in modeling climate change. LASE has demonstrated the necessary potential in providing high resolution water vapor measurements that can advance the studies of tropospheric water vapor distributions. LASE has flown 19 times during the development of the instrument and the validation of the science data. A joint international field mission was completed in the summer of 1996; adding 9 more successful flights. The LASE Instument is being adapted to other aircraft platforms to support planned missions and to increase its utility.

  16. LASE Ti: Sapphire Laser

    NASA Technical Reports Server (NTRS)

    1995-01-01

    In the photo, Messrs. Leroy F. Matthews (left) and Frank J. Novak (Lockheed Engineering & Sciences Co.) are preparing the Lidar Atmospheric Sensing Experiment (LASE) Instrument for integration into a NASA/ER-2 aircraft for a field mission. LASE is the first fully- engineered, autonomous differential Absorption Lidar (DIAL) System for the measurement of water vapor, aerosol and cloud in the troposphere. LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150 mJ/pulse. The laser beam is seeded to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere with accuracy having less than 6% of error. No other instrument can provide the spatial coverage and accuracy of LASE. Water vapor is the most radiative active gas in the troposphere, and the lack of understanding about its distribution provides one of the largest uncertainties in modeling climate change. LASE has demonstrated the necessary potential in providing high resolution water vapor measurements that can advance the studies of tropospheric water vapor distributions. LASE has flown 19 times during the development of the instrument and the validation of the science data. A joint international field mission was completed in the summer of 1996; adding 9 more successful flights. The LASE Instrument is being adapted to other aircraft platforms to support planned missions and to increase its utility.

  17. Optical Extinction of Sapphire Shock Loaded to 250-260 GPa

    SciTech Connect

    Hare, D E; Webb, D J; Lee, S H; Holmes, N

    2001-08-21

    Sapphire, a common optical window material used in shock-compression studies, displays significant shock-induced optical emission and extinction. It is desirable to quantify such non-ideal window behavior to enhance the usefulness of sapphire in optical studies of opaque shock-compressed samples, such as metals. At the highest stresses we can achieve with a two-stage gas gun it is technically very difficult to study the optical properties of sapphire without the aid of some opaque backing material, hence one is invariably compelled to deconvolve the optical effects of the opaque surface and the sapphire. In an effort to optimize this deconvolution process, we have constructed sapphire/thin-film/sapphire samples using two basic types of thin films: one optimized to emit copious optical radiation (the hot-film sample), the other designed to yield minimal emission (the cold-film sample). This sample geometry makes it easy to maintain the same steady shock-stress in the sapphire window (255 GPa in our case) while varying the window/film interface temperature. A six-channel time-resolved optical pyrometer is used to measure the emission from the sample assemblies. Two different sapphire crystal orientations were evaluated. We also comment on finite thermal conductivity effects of the thin-film geometry on the interpretation of our data.

  18. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    PubMed

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions. PMID:27140144

  19. The crystal structure of synthetic simmonsite, Na 2LiAlF 6

    NASA Astrophysics Data System (ADS)

    Ross, Kirk C.; Mitchell, Roger H.; Chakhmouradian, Anton R.

    2003-04-01

    The structure of the synthetic fluoroperovskite, Na 2LiAlF 6 (simmonsite), has been determined by powder X-ray diffraction using the Rietveld method of structure refinement. The compound adopts space group P2 1/ n [#14; a=5.2842(1); b=5.3698(1); c=7.5063(2) Å; β=89.98(1)°; Z=4), and is a member of the cryolite (Na 2NaAlF 6) structural group characterized by ordering of the B-site cations (Li, Al) and tilting of the BF 6 octahedra according to the tilt scheme a-b-c+. Rotations of the B-site polyhedra are less ( ΦLi=14.9°; ΦAl=17.0°) than those found in cryolite ( ΦNa=18.6; ΦAl=23.5°) because of the larger difference in the ionic radii of the B-site cations in cryolite as compared to those in simmonsite. Na at the A-site is displaced from the special position resulting in 10- and 8-fold coordination in simmonsite and cryolite, respectively. By analogy with the synthetic compound, naturally occurring simmonsite is considered to adopt space group P2 1/ n (#14) and not the P2 1(#4) or P2 1/ m(#11) space groups.

  20. Rare earth elements in synthetic zircon. 2. a single-crystal x-ray study of xenotime substitution.

    SciTech Connect

    Finch, R. J.; Hanchar, J. M.; Hoskin, P. W. O.; Burns, P. C.; Chemical Engineering; Australian National Univ.; Univ. of Notre Dame

    2001-05-01

    Zircon crystals synthesized in a Li-Mo oxide melt and doped with trivalent lanthanides and Y (REE), both with and without P, were examined by single-crystal X-ray diffraction (XRD). REE are incorporated into the Zr site in the zircon structure, and some Zr appears to be displaced to the Si site. Crystals doped with middle REE (MREE, Sm to Dy) and Y, plus P follow the xenotime substitution (REE{sup 3+} + P{sup 5+} = Zr{sup 4+} + Si{sup 4+}) rather closely, whereas crystals doped with heavy REE (HREE, Er to Lu) deviate from the xenotime substitution, having REE:P atomic ratios significantly greater than one. Xenotime substitution requires that P{sup 5+} replace Si{sup 4+}, but this substitution becomes limited by strain at the Si site in HREE-doped crystals. As Si sites become saturated with P{sup 5+}, additional charge balance in synthetic zircon crystals may be provided by Mo{sup 6+} and Li{sup +} from the flux entering interstitial sites, accounting for an additional 0.3 to 0.6 at% HREE beyond that balanced by P{sup 5+} ions. Heavy REE are more compatible in the zircon structure than are LREE and MREE, and HREE substitution is ultimately limited by the inability of the zircon structure to further accommodate charge-compensating elements. Thus the limit on REE concentrations in zircon is not a simple function of REE{sup 3+} ionic radii but depends in a complex way on structural strain at Zr and Si sites, which act together to limit REE and P incorporation. The mechanisms that limit the coupled xenotime substitution change from LREE to HREE. This change means that REE fractionation in zircon may vary according to the availability of charge-compensating elements. REE partition coefficients between zircon and melt must also depend in part on the availability of charge-compensating elements and their compatibility in the zircon structure.

  1. Single-crystal X-ray diffraction study of synthetic sodium-hydronium jarosite

    NASA Astrophysics Data System (ADS)

    Najorka, Jens; Lewis, James M. T.; Spratt, John; Sephton, Mark A.

    2016-05-01

    Na-H3O jarosite was synthesized hydrothermally at 413 K for 8 days and investigated using single-crystal X-ray diffraction (XRD) and electron microprobe analysis (EMPA). The chemical composition of the studied crystal is [Na0.57(3) (H3O)0.36 (H2O)0.07]A Fe2.93(3) (SO4)2 (OH)5.70 (H2O)0.30, and Fe deficiency was confirmed by both EMPA and XRD analysis. The single-crystal XRD data were collected at 298 and 102 K, and crystal structures were refined in space group Roverline{3}m. The room-temperature data match structural trends of the jarosite group, which vary linearly with the c axis. The low-temperature structure at 102 K shows an anisotropic decrease in the unit cell parameters, with c and a decreasing by 0.45 and 0.03 %, respectively. Structural changes are mainly confined to the A site environment. Only minor changes occur in FeO6 and SO4 polyhedra. The structure responds upon cooling by increasing bond length distortion and by decreasing quadratic elongation of the large AO12 polyhedra. The structural parameters at low temperature follow very similar patterns to structural changes that correspond to compositional variation in the jarosite group, which is characterised by the flexibility of AO12 polyhedra and rigidity of Fe(OH)4O2-SO4 layers. The most flexible areas in the jarosite structure are localized at AO12 edges that are not shared with neighbouring FeO6 octahedra. Importantly, for the application of XRD in planetary settings, the temperature-related changes in jarosite can mimic compositional change.

  2. Isolation of brassicasterol, its synthetic prodrug-crystal structure, stereochemistry and theoretical studies

    NASA Astrophysics Data System (ADS)

    Sethi, Arun; Prakash, Rohit; Srivastava, Sangeeta; Amandeep; Bishnoi, Abha; Singh, Ranvijay Pratap

    2014-07-01

    In the present study brassicasterol (1), was isolated from the chloroform extract of the flowers of Allamanda violacea and identified with the help of different spectroscopic techniques like 1H, 13C, 2D NMR (1H-1H COSY), IR, UV and mass spectrometry. A novel prodrug was synthesized by carrying out esterification of brassicasterol (1) with the well known drug naproxen using Steglich esterification to give 3β-(2-(6-methoxynaphthalene-2yl) propionoxy) 24 methyl cholest-5, 22-dien (2). Compounds 2 was subjected to single crystal X-ray diffraction technique and crystallized out in monoclinic form having P21 space group and stabilized by CH-π interactions. Structure and stereochemistry of compound 2 was established with the help of modern spectroscopic techniques like 1H NMR, IR, UV, mass spectrometry as well as with single crystal X-ray diffraction. Molecular geometry and vibrational frequencies of compounds 1 and 2 were calculated by density functional method (DFT/B3LYP) using 6-31G (d, p) basis set, bond parameters and IR frequencies were correlated with the experimental data. 1H and 13C chemical shifts of compound 1 and 1H chemical shifts of compound 2 were calculated with GIAO method and correlated with experimental data. Hyperconjugative interactions were studied with the help of natural bond order analysis (NBO). Electronic properties of both the compounds such as HOMO-LUMO energies were measured with the help of time dependent DFT method.

  3. Fabrication of a new substrate for atomic force microscopic observation of DNA molecules from an ultrasmooth sapphire plate.

    PubMed Central

    Yoshida, K; Yoshimoto, M; Sasaki, K; Ohnishi, T; Ushiki, T; Hitomi, J; Yamamoto, S; Sigeno, M

    1998-01-01

    A new stable substrate applicable to the observation of DNA molecules by atomic force microscopy (AFM) was fabricated from a ultrasmooth sapphire (alpha-Al2O3 single crystal) plate. The atomically ultrasmooth sapphire as obtained by high-temperature annealing has hydrophobic surfaces and could not be used for the AFM observation of DNA. However, sapphire treated with Na3PO4 aqueous solution exhibited a hydrophilic character while maintaining a smooth surface structure. The surface of the wet-treated sapphire was found by x-ray photoelectron spectroscopy and AFM to be approximately 0.3 nm. The hydrophilic surface character of the ultrasmooth sapphire plate made it easy for DNA molecules to adhere to the plate. Circular molecules of the plasmid DNA could be imaged by AFM on the hydrophilic ultrasmooth sapphire plate. PMID:9545030

  4. Oxidation states of Fe and Ti in blue sapphire

    NASA Astrophysics Data System (ADS)

    Wongrawang, P.; Monarumit, N.; Thammajak, N.; Wathanakul, P.; Wongkokua, W.

    2016-02-01

    X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe2+ and Ti4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe3+ state; and Ti at 4984 eV, corresponding to Ti4+. From these results, we propose Fe3+-Ti4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV-vis absorption spectra, to describe the cause of the color of blue sapphire.

  5. Role of Stearic Acid in the Strain-Induced Crystallization of Crosslinked Natural Rubber and Synthetic Cis-1,4-Polyisoprene

    SciTech Connect

    Kohjiya,S.; Tosaka, M.; Furutani, M.; Ikeda, Y.; Toki, S.; Hsiao, B.

    2007-01-01

    Strain-induced crystallization of crosslinked natural rubber (NR) and its synthetic analogue, cis-1,4-polyisoprene (IR), both mixed with various amounts of stearic acid (SA), were investigated by time-resolved X-ray diffraction using a powerful synchrotron radiation source and simultaneous mechanical (tensile) measurement. No acceleration or retardation was observed on NR in spite of the increase of SA amount. Even the SA-free IR crystallized upon stretching, and the overall crystallization behavior of IR shifted to the larger strain ratio with increasing SA content. No difference due to the SA was detected in the deformation of crystal lattice by stress for both NR and IR. These results suggested that the extended network chains are effective for the initiation of crystallization upon stretching, while the role of SA is trivial. These behaviors are much different from their crystallization at low temperature by standing, where SA acts as a nucleating agent.

  6. Temperature Compensated Sapphire Resonator for Ultra-Stable Oscillator Capability at Temperatures Above 77 Kelvin

    NASA Technical Reports Server (NTRS)

    Dick, G.; Santiago, D.; Wang, R.

    1994-01-01

    We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH xxxsubn11) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 Kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package. A mechanical compensation mechanism, enabled by the difference between copper and sapphire expansion coefficients, tunes the resonator to cancel the temperature variation of sapphire's dielectric constant.

  7. Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.

    PubMed

    Kumaran, Raveen; Webster, Scott E; Penson, Shawn; Li, Wei; Tiedje, Thomas; Wei, Peng; Schiettekatte, Francois

    2009-11-01

    Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4). PMID:19881593

  8. Multiscale experimental investigation of crystal plasticity and grain boundary sliding in synthetic halite using digital image correlation

    NASA Astrophysics Data System (ADS)

    Bourcier, M.; Bornert, M.; Dimanov, A.; HéRipré, E.; Raphanel, J. L.

    2013-02-01

    is a renewed interest in the study of the rheology of halite since salt cavities are considered for waste repositories or energy storage. This research benefits from the development of observation techniques at the microscale, which allow precise characterizations of microstructures, deformation mechanisms, and strain fields. These techniques are applied to uniaxial compression tests on synthetic halite done with a classical press and with a specific rig implemented in a scanning electron microscope. Digital images of the surface of the sample have been recorded at several loading stages. Surface markers allow the measurement of displacements by means of digital image correlation techniques. Global and local strain fields may then be computed using ad hoc data processing. Analysis of these results provides a measure of strain heterogeneity at various scales, an estimate of the size of the representative volume element, and most importantly an identification of the deformation mechanisms, namely crystal slip plasticity and grain boundary sliding, which are shown to be in a complex local interaction. Indeed, the applied macroscopic loading gives rise locally to complex stress states owing to relative crystallographic orientations, density and orientation of interfaces, and local deformation history. We have quantitatively estimated the relative importance of crystal slip plasticity and grain boundary sliding for different microstructures and evidenced their dependence on grain size. The two mechanisms of deformation and their link to the microstructure should thus be considered when modeling polycrystalline viscoplasticity.

  9. Effects of compression direction on the plasticity and rheology of hydrolytically weakened synthetic quartz crystals at atmospheric pressure

    SciTech Connect

    Linker, M.F.; Kirby, S.H.; Ord, A.; Christie, J.M.

    1984-06-10

    A hydrothermally grown synthetic quartz crystal with 370 +- 60 ppm hydroxyl impurity was cut into right rectangular prisms in eight crystallographic orientations. We compressed the prisms under constant axial force corresponding to a uniaxial stress of 140.0 +- 0.5 MPa, and temperatures of 510/sup 0/ and 750/sup 0/C. All but one of the samples sustained permanent axial strains of 2--3%. We established the operating slip systems from specimen shape change, slip bands and dislocation etch pits on polished surfaces, crystallographic orientation changes, stress optical features in thin sections, and transmission electron microscopy. The observed creep behavior and plasticity divided the samples into three groups: (1) Crystals compressed at 45/sup 0/ to (0001) and (2110) and those compressed perpendicular(0111) and perpendicular(0111) deformed principally by slip parallel to (0001). Creep rates were relatively high and were not strongly sensitive to test temperature. Dislocation arrays approximately parallel to (2110) are common. Dislocation loops are elongate parallel to (0001), indicating that the edge segments were more mobile than the screw segements. (2) The second groups of samples were loaded normal to (0001) in three orientation: perpendicular(2110), perpendicular(0110), and at 45/sup 0/ to (1100). These samples deformed primarily by 0 )1010) slip with some evidence for secondary slip on the other systems. They were more creep resistant than the first group and displayed a much higher sensitivity of creep rate to test temperature.

  10. Phosphate adsorption and desorption in relation to morphology and crystal properties of synthetic hematites

    NASA Astrophysics Data System (ADS)

    Colombo, C.; Barrón, V.; Torrent, J.

    1994-02-01

    Phosphate adsorption and desorption by iron hydr(oxides) are geochemically important processes affecting water quality and soil fertility. Relatively little is known, however, about the interaction between phosphate and hematite, which after goethite is the most abundant iron hydr(oxide) in nature. To study the effect of morphology and other crystal properties of hematite on phosphorous adsorption and desorption, thirty hematites synthesized by different methods and differing widely in properties were used. Phosphate adsorption curves 1 and 124 days after P addition were adequately described by the Freundlich equation. The P adsorbed at an equilibrium concentration of 1 mg P/L (32 μM) at 1 and 124 days ( A 1, A 124) ranged between 0.31 and 2.07 ( X¯ = 1.03; SD = 0.53) μmol/m 2, and between 0.54 and 2.72 ( X¯ = 1.59; SD = 0.65) μmol/m 2, respectively. The values of A decreased when the crystals and the X-ray coherently scattering domains became more platy in the c with respect to the a direction, supporting the hypothesis that the P-adsorbing faces are the nonbasal ones. Exponent b of the Freundlich equation, which gives a measure of the relative affinity of the adsorption sites, increased when domains and crystals became more platy, i.e., the more platy the crystal, the lower the proportion of high-affinity sites. The ratio between slow (1-124 days) and total (124 days) adsorption increased with decreasing affinity (higher b values) and was not related to microporosity. In comparison to goethite, the present results show that hematite has more variability in P-adsorption capacity, adsorbs on average less P per unit surface area, has less affinity for phosphate, and exhibits a more important slow adsorption component. The proportion of the adsorbed phosphate that could be desorbed by an anion-exchange resin or by electroultrafiltration was affected by those hematite properties affecting diffusion (e.g., microporosity). Isotopically exchangeable P did not depend

  11. Methodology of growing gigantic sapphire for GSLW project

    NASA Astrophysics Data System (ADS)

    Abgaryan, Artoush A.; Hartounian, Gomidas

    2005-09-01

    In our present world the Crystal Growth Technology does not have the necessary and sufficient conditions to manufacture large sizes; especially in the Sapphire Crystal world. We have a theoretical and methodological development for growing gigantic Sapphire Crystal Lenses. Our gigantic Sapphire Crystal Lenses have a unique optical characteristic which will be used in the Global System of Laser Weapons (GSLW); hence solving one of the crucial problems in the Relay Mirror System; where it captures the Laser beam from the earth surface, cleaning the beam in the Satellite and redirecting the laser energy to the precise desired target. Developed and solution for the temperature and heat-elasticity fields in growth systems are considered theoretical, in order to assess their effects on the optical symmetry of the growing crystal. The process is modeled using three-dimensional curvilinear coordinates to describe a closed, low-strain heat-elasticity system, with allowance made for the temperature variations of the thermal properties of the multilayer growth system, and nonlinear and unsteady-state process with arbitrary boundary conditions. The results presented as plots of the strain, stress, displacement, and temperature fields; demonstrate the potential of the method for designing new growth units and improving the existing ones and suggesting that crystals, in general, without frustration of optical symmetry can, in principle, be grown. In order to solve generalized problem for large optics. It is required to have super and correct mathematical computing calculations, and using basic fundamental laws of nature regarding optical symmetry in the crystal, and discovering the radical "new wave method" for crystal growth technology.

  12. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    PubMed

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier. PMID:27410590

  13. Spectroscopic studies of excitons in cuprous oxide: Natural crystals and synthetic thick films on magnesium oxide

    NASA Astrophysics Data System (ADS)

    Sun, Yi

    2001-10-01

    We observed exciton photoluminescence from Cu2O natural bulk crystals under two-photon excitation to the 1s, as well as to the 2s level, over a wide temperature range. The direct recombination emission, denoted as Xo, and a phonon- assisted, electric-dipole radiative transition involving G-12 longitudinal optical phonons, denoted as Xo- G-12 , were observed for 1s excitation. We have studied the angular (at 1.8K) and temperature (from 1.8K to 297K) dependence of the time integrated photoluminescence intensity of both emission features. For resonant pumping to the 1s level, the direct emission is strongly enhanced at low temperature. It is forward directed, however, with an angular width substantially larger than the divergence of the excitation beam; excitation to the 2s level (which subsequently decays into a 1s level) results in a more isotropic angular distribution of Xo emission. The lifetime of the Xo emission resulting from resonant excitation to the 1s level at 1.8K is ~2ns, shorter than the decay time of thermalized orthoexcitons. The results support the idea that resonant two-photon excitation to the 1s level results primarily in a quadrupole-orthoexciton-polariton formation. A theory involving the Green's function and coupled photon-exciton wave equations was developed to simulate the coherent polariton propagation. To study excitons in a spatially confined geometry, we developed an ex situ growth technique to obtain single-crystal like Cu2O thick films on MgO substrates. The optical absorption spectrum exhibits the exciton absorption series up to n = 5p at low temperature. 1s orthoexciton direct emission and phonon-assisted emission features were observed to split into three (on MgO (110)) and two (on MgO (111)) peaks. The distortion of film crystal structure and the effective Hamiltonian including a deformation potential were used to explain the energy level splitting and shift of the 1s orthoexcitons in Cu2O films. Cu2O dots and waveguides were also

  14. Crystal chemical properties of synthetic lazulite-scorzalite solid-solution series

    NASA Astrophysics Data System (ADS)

    Schmid-Beurmann, P.; Knitter, St.; Cemič, L.

    Members of the lazulite-scorzalite (MgAl2- (PO4)2(OH)2-FeAl2(PO4)2(OH)2) solid-solution series were synthesized in compositional steps of 12.5mol% at T=485°C and P=0.3GPa under hydrothermal conditions and controlled oxygen fugacities of the Ni/NiO-buffer. X-ray powder diffraction and 57Fe-Mössbauer studies show that under these conditions a complete solid-solution series is formed which is characterized by the substitution of Mg2+ and Fe2+ on the octahedral Me2+ site. The 57Fe-Mössbauer spectra which reveal the presence of both ferrous and ferric iron and the compositional data were interpreted in terms of a defect model with a distribution of the ferric ions over both the Me2+ and the Al3+ positions and vacancies on the Me2+ site. The 57Fe-Mössbauer parameters of the synthetic compounds correspond to those of natural lazulites except for the total absorption ratio of the ferric iron A(Fe3+)/(A(Fe3+)+A(Fe2+)), which is significantly higher in natural lazulites of the same composition. The total absorption ratio of the ferric iron increases from 4% in pure scorzalite to 15% in a Mg-rich solid-solution with xFe=12(1)%

  15. Characterization of synthetic nanocrystalline mackinawite: crystal structure, particle size, and specific surface area

    PubMed Central

    Jeong, Hoon Y.; Lee, Jun H.; Hayes, Kim F.

    2010-01-01

    Iron sulfide was synthesized by reacting aqueous solutions of sodium sulfide and ferrous chloride for 3 days. By X-ray powder diffraction (XRPD), the resultant phase was determined to be primarily nanocrystalline mackinawite (space group: P4/nmm) with unit cell parameters a = b = 3.67 Å and c = 5.20 Å. Iron K-edge XAS analysis also indicated the dominance of mackinawite. Lattice expansion of synthetic mackinawite was observed along the c-axis relative to well-crystalline mackinawite. Compared with relatively short-aged phase, the mackinawite prepared here was composed of larger crystallites with less elongated lattice spacings. The direct observation of lattice fringes by HR-TEM verified the applicability of Bragg diffraction in determining the lattice parameters of nanocrystalline mackinawite from XRPD patterns. Estimated particle size and external specific surface area (SSAext) of nanocrystalline mackinawite varied significantly with the methods used. The use of Scherrer equation for measuring crystallite size based on XRPD patterns is limited by uncertainty of the Scherrer constant (K) due to the presence of polydisperse particles. The presence of polycrystalline particles may also lead to inaccurate particle size estimation by Scherrer equation, given that crystallite and particle sizes are not equivalent. The TEM observation yielded the smallest SSAext of 103 m2/g. This measurement was not representative of dispersed particles due to particle aggregation from drying during sample preparation. In contrast, EGME method and PCS measurement yielded higher SSAext (276–345 m2/g by EGME and 424 ± 130 m2/g by PCS). These were in reasonable agreement with those previously measured by the methods insensitive to particle aggregation. PMID:21085620

  16. The Crystal Structure of Synthetic Autunite, Ca[(UO2)(PO4)]2(H2O)11

    NASA Astrophysics Data System (ADS)

    Locock, A. J.; Burns, P. C.

    2002-05-01

    Autunite, Ca[(UO2)(PO4)]2(H2O)11, is amongst the most abundant and widely distributed of the uranyl phosphate minerals, yet because of its pseudo-tetragonal symmetry and rapid dehydration behavior, the details of its symmetry, stoichiometry and structure remain uncertain. The crystal structure of autunite was solved by direct methods and refined by full-matrix least-squares techniques to agreement indices wR2 = 0.125 for all data, and R1 = 0.042, calculated for the 1497 unique observed reflections. Autunite is orthorhombic, space group Pnma, Z = 4, a = 14.0135(6), b = 20.7121(8), c = 6.9959(3) Å, V = 2030.55(15) Å 3. Intensity data were collected using MoK-alpha radiation and a CCD-based area detector. The structure contains the well-known autunite type sheet with composition [(UO2)(PO4)]1-, resulting from the sharing of equatorial vertices of the uranyl square bipyramids with the phosphate tetrahedra. Calcium in the interlayer is coordinated by seven H2O groups and two longer distances to uranyl ion oxygen atoms. In addition, there are two symmetrically independent H2O groups held in the structure only by H-bonding. The structures of other members of the autunite group: orthorhombic synthetic Sr[(UO2)(PO4)]2(H2O)11, triclinic synthetic Ni[(UO2)(PO4)]2(H2O)12 and tetragonal zeunerite, Cu[(UO2)(AsO4)]2(H2O)12, will also be discussed.

  17. An Insight into the Pharmacophores of Phosphodiesterase-5 Inhibitors from Synthetic and Crystal Structural Studies

    SciTech Connect

    Chen,G.; Wang, H.; Robinson, H.; Cai, J.; Wan, Y.; Ke, H.

    2008-01-01

    Selective inhibitors of cyclic nucleotide phosphodiesterase-5 (PDE5) have been used as drugs for treatment of male erectile dysfunction and pulmonary hypertension. An insight into the pharmacophores of PDE5 inhibitors is essential for development of second generation of PDE5 inhibitors, but has not been completely illustrated. Here we report the synthesis of a new class of the sildenafil derivatives and a crystal structure of the PDE5 catalytic domain in complex with 5-(2-ethoxy-5-(sulfamoyl)-3-thienyl)-1-methyl-3-propyl-1, 6-dihydro-7H-pyrazolo[4, 3-d]pyrimidin-7-one (12). Inhibitor 12 induces conformational change of the H-loop (residues 660-683), which is different from any of the known PDE5 structures. The pyrazolopyrimidinone groups of 12 and sildenafil are well superimposed, but their sulfonamide groups show a positional difference of as much as 1.5 Angstroms . The structure-activity analysis suggests that a small hydrophobic pocket and the H-loop of PDE5 are important for the inhibitor affinity, in addition to two common elements for binding of almost all the PDE inhibitors: the stack against the phenylalanine and the hydrogen bond with the invariant glutamine. However, the PDE5-12 structure does not provide a full explanation to affinity changes of the inhibitors. Thus alternatives such as conformational change of the M-loop are open and further structural study is required.

  18. Analysis of laser-generated plasma ionizing radiation by synthetic single crystal diamond detectors

    NASA Astrophysics Data System (ADS)

    Marinelli, M.; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Cutroneo, M.; Torrisi, L.; Margarone, D.; Velyhan, A.; Krasa, J.; Krousky, E.

    2013-05-01

    Diamond based detectors have been used in order to analyze the ionizing radiation emitted from the laser-generated plasma. High energy proton/ion beams were generated at Prague Asterix Laser System (PALS) Centre by the sub-nanosecond kJ-class laser at intensities above 1016 W/cm2. The tested detectors consisted of a photoconductive device based on high quality chemical vapor deposition (CVD) single crystal diamond, produced at Rome "Tor Vergata" University. They have been operated in planar configuration, having inter-digitized electrodes. The proposed diamond detectors were able to measure UV, X-rays, electrons and ions. They have been employed in time-of-flight (TOF) configuration and their reliability was checked by comparison with standard ion collectors (mostly used at PALS). Both the forward and backward expanding plasma was characterized in the experiment. The results indicate that diamond detectors are very promising for the characterization of fast proton and ion beams produced by high power laser systems.

  19. Seven Post-synthetic Covalent Reactions in Tandem Leading to Enzyme-like Complexity within Metal-Organic Framework Crystals.

    PubMed

    Fracaroli, Alejandro M; Siman, Peter; Nagib, David A; Suzuki, Mitsuharu; Furukawa, Hiroyasu; Toste, F Dean; Yaghi, Omar M

    2016-07-13

    The design of enzyme-like complexity within metal-organic frameworks (MOFs) requires multiple reactions to be performed on a MOF crystal without losing access to its interior. Here, we show that seven post-synthetic reactions can be successfully achieved within the pores of a multivariate MOF, MTV-IRMOF-74-III, to covalently incorporate tripeptides that resemble the active sites of enzymes in their spatial arrangement and compositional heterogeneity. These reactions build up H2N-Pro-Gly-Ala-CONHL and H2N-Cys-His-Asp-CONHL (where L = organic struts) amino acid sequences by covalently attaching them to the organic struts in the MOFs, without losing porosity or crystallinity. An enabling feature of this chemistry is that the primary amine functionality (-CH2NHBoc) of the original MOF is more reactive than the commonly examined aromatic amines (-NH2), and this allowed for the multi-step reactions to be carried out in tandem within the MOF. Preliminary findings indicate that the complexity thus achieved can affect reactions that were previously accomplished only in the presence of enzymes. PMID:27346625

  20. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    NASA Technical Reports Server (NTRS)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  1. Germanium Nanocrystals Embedded in Sapphire

    SciTech Connect

    Xu, Q.; Sharp, I.D.; Liao, C.Y.; Yi, D.O.; Ager III, J.W.; Beeman, J.W.; Yu, K.M.; Chrzan, D.C.; Haller, E.E.

    2005-04-15

    {sup 74}Ge nanocrystals are formed in a sapphire matrix by ion implantation followed by damage. Embedded nanocrystals experience large compressive stress relative to bulk, as embedded in sapphire melt very close to the bulk melting point (Tm = 936 C) whereas experience considerably lower stresses. Also, in situ TEM reveals that nanocrystals ion-beam-synthesized nanocrystals embedded in silica are observed to be spherical and measured by Raman spectroscopy of the zone center optical phonon. In contrast, reveals that the nanocrystals are faceted and have a bi-modal size distribution. Notably, the matrix remains crystalline despite the large implantation dose and corresponding thermal annealing. Transmission electron microscopy (TEM) of as-grown samples those embedded in silica exhibit a significant melting point hysteresis around T{sub m}.

  2. SAPPHIRE: scenarios, architecture, and process.

    PubMed

    Kay, S; Redman, R; McWilliams, A; Bradley, P; Daniels, A

    1994-06-01

    General Medical Practice (GMP) information systems within the UK are becoming more sophisticated and more complex and are widely available from numerous suppliers. Although such systems are viewed as being important, they are problematic in terms of interpreting and assessing their usefulness, and their impact upon work and the organisation (G. Walsham, Interpreting Information Systems in Organizations (Wiley, Chichester, 1993)). In particular, it is difficult for any who have an interest in these systems to apply existing technical specifications to a specific situation, and to match individual requirements with the supplier's products. The research project SAPPHIRE seeks to inform the decision making of stakeholders, e.g. GPs, facilitators and suppliers, with respect to procurement, update, design and supply of GMP systems by developing the means of evaluating such systems, and by facilitating an accreditation process through that evaluation. This extended paper introduces the multi-faceted approach, scenarios, architecture and process of SAPPHIRE. PMID:7956163

  3. Erbium localized doping into various cuts of lithium niobate and sapphire: a comparative study

    NASA Astrophysics Data System (ADS)

    Nekvindova, Pavla; Mackova, Anna; Perina, Vratislav; Cervena, Jarmila; Capek, Pavel; Schroefel, Josef; Spirkova, Jarmila; Oswald, Jiri

    2003-07-01

    Medium temperature (350 °C) localized doping of Er3+ was studied in lithium niobate (LN) and sapphire single crystal wafers that were cut in various crystallographic directions. It was found that the efficiency of the doping was connected with orientations of the substrate wafers of both LN and sapphire, and with the presence of mobile lithium ions in the structure of LN. The basic interstitial mechanism of erbium incorporation into the structure of sapphire and LN is in the latter accompanied with erbium for lithium ion exchange. While the rate of the interstitial diffusion was higher in the wafers oriented perpendicularly towards the cleavage planes of the crystals, ion exchange process was significant in the wafers cut in cleavage planes. Waveguiding properties in erbium doped lithium niobate originated rather from presence of erbium in the structure of the crystals than being a consequence of a weak proton exchange. Luminescence properties of the fabricated samples are also presented.

  4. Formation of twins in sapphire under shock wave loading: Atomistic simulations

    NASA Astrophysics Data System (ADS)

    Kuksin, A. Yu.; Yanilkin, A. V.

    2012-02-01

    This work is devoted to molecular dynamics (MD) simulation of shock-wave loading of sapphire (α-Al2 O3). Defect free sapphire and sapphire with the microcrack are considered. Homogeneous nucleation and growth of rhombohedral twins are observed in single crystal alumina. A fast mechanism of plastic deformation is revealed under shock-wave loading of sapphire with microcrack. Rhombohedral twins nucleate and grow as a result of a two stage process. At the first stage the formation of a new type of linear defect takes place in the shock wave front, which is initiated at the surface of the microcrack. At the second stage the rhombohedral twins grow from the primary linear defects and combine with each other. The results are confirmed by first principles calculations.

  5. Forced polarization of α-sapphire induced by coated LiNbO3 and LiTaO3 films

    NASA Astrophysics Data System (ADS)

    Yang, X.; Wu, X. L.; Feng, Y.; Li, J.; Jiang, M.

    2004-04-01

    We have investigated the formation mechanism of the interfacial electric field in LiNbO3(or LiTaO3)/α-sapphire crystal structures, which is important in understanding the photoluminescence properties of this kind of ferroelectric film-coated crystal material. It is revealed that the interfacial electric field arises from the interfacial polarization charge generated during poling of LiNbO3(or LiTaO3) film near Curie temperature, which induces forced polarization of the α-sapphire crystal. As a result, lattice distortions of the α-sapphire crystal change the crystal field of Cr3+ ion in the sapphire crystal and therefore lead to intensity enhancement of R-line luminescence from Cr3+ centers.

  6. Microwave Frequency Discriminator With Sapphire Resonator

    NASA Technical Reports Server (NTRS)

    Santiago, David G.; Dick, G. John

    1994-01-01

    Cooled sapphire resonator provides ultralow phase noise. Apparatus comprises microwave oscillator operating at nominal frequency of about 8.1 GHz, plus frequency-discriminator circuit measuring phase fluctuations of oscillator output. One outstanding feature of frequency discriminator is sapphire resonator serving as phase reference. Sapphire resonator is dielectric ring resonator operating in "whispering-gallery" mode. Functions at room temperature, but for better performance, typically cooled to operating temperature of about 80 K. Similar resonator described in "Sapphire Ring Resonator for Microwave Oscillator" (NPO-18082).

  7. Computer simulation of growth process in synthetic quartz crystals grown from X-bar, Y-bar and rectangular Z-plate seeds

    NASA Astrophysics Data System (ADS)

    Iwasaki, H.; Iwasaki, F.; Yokokawa, H.; Kurashige, M.; Oba, K.

    2002-02-01

    The growth simulations of synthetic quartz crystals grown on seeds with industrialized sizes and orientations were shown on the procedure by means of the setting of virtual lengths between the seed center and principal crystal faces to be grown. The virtual lengths needed for simulations are calculated on the given sizes and shapes of seeds, X-bar, Y-bar and rectangular Z-plate. The simulations of growth processes are executed as a function of growth time under the model values of growth rates on principal crystal faces, m, R, r, Z, and the so-called S. By the comparison of geometrical sizes of as-grown crystal faces with simulated faces, the growth rates of principal faces are quantitatively evaluated in the commercially produced quartz crystals grown from the rectangular Z-plate seeds. The growth rates of R- and r-faces at the upper and lower sides of grown crystals show somewhat different values which may be due to the direction of convection flow in autoclave.

  8. Experimental analysis of sapphire contact probes for Nd-YAG laser angioplasty.

    PubMed

    Ashley, S; Brooks, S G; Gehani, A A; Kester, R C; Rees, M R

    1990-06-01

    Laser angioplasty may offer percutaneous recanalization of occluded vessels where conventional guidewire and balloon techniques fail. Metal laser thermal angioplasty probes may, however, cause excessive thermal damage due to high tip temperatures (greater than 400.C). Therefore, contact probes made from artificial sapphire crystal designed for general laser surgery are currently being evaluated for use in laser angioplasty with continuous wave Nd-YAG energy. The sapphire modifies the laser energy in various ways, and this paper examines the physical characteristics of five types of rounded sapphire probe (SMTR, MTR, MTRL, OS, LT) and how these properties are affected by clinical usage. The laser beam profile emitted by these probes demonstrates a focal spot 1-2 mm in front of the tip. However, the forward transmission of Nd-YAG energy through the sapphires varied (SMTR, 85%; MTR, 83%; MTRL, 75%; OS, 54%; LT, 69%). Probe heating occurs owing to energy absorption within the sapphire. The surface temperature of the sapphires was measured in air by infrared thermography and the hottest region within the probes localized by an isothermographic technique. At energy settings used clinically (20 J, 10 watts for 2 s) the SMTR, MTR, and MTRL probes exhibited higher temperature rises (94-112.C) than the OS and LT probes (30.C), and heating was localized to the front surface of the former probes. Peak sapphire temperatures remained lower than those of metal probes even at higher energies. After clinical use, the MTR probe demonstrated reduced transmission, beam defocusing, and increased heating, due to surface pitting. Thus, recanalization with sapphire probes occurs by a combination of photothermal and contact thermal effects that are localized to the probe tip and may reduce the degree of thermal injury associated with metal probes. Understanding these basic properties is important to the application and development of contact probes for laser recanalization. PMID:2142867

  9. Design and preparation of laser film on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Dang, Shao-kun; Xu, Jun-qi; Su, Jun-hong; Guo, Fang; Cheng, Yao-jin

    2014-08-01

    Sapphire crystal as a kind of good material has a good transmittance in the ultraviolet, visible, infrared, which was widely used in the high-intensity laser system as the window material. Anti-reflection thin films on sapphire substrate were commonly used in high-energy laser system in the middle infrared bands 3~5μm and these thin films are very easily damaged for high energy laser system. In this paper, we adopt thermal evaporation technique on the sapphire substrate was prepared by design of single layer and multilayer anti-reflection coatings system so that the infrared transmittance satisfy the design requirements. The results of transmittance and laser damage performance tests show that the anti-reflection coating of 3~5μm transmittance is more than 97% on average, Laser-induced damage threshold (LIDT) is more than 5J/cm2 (1064nm), which means that this method could obtain a high-quality laser film.

  10. Titanium-doped sapphire laser research and design study

    NASA Technical Reports Server (NTRS)

    Moulton, Peter F.

    1987-01-01

    Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

  11. A comparison of the abilities of natural rubber (NR) and synthetic polyisoprene cis-1,4 rubber (IR) to crystallize under strain at high strain rates.

    PubMed

    Candau, Nicolas; Chazeau, Laurent; Chenal, Jean-Marc; Gauthier, Catherine; Munch, Etienne

    2016-02-01

    Strain induced crystallization (SIC) of a natural rubber (NR) and a synthetic rubber (IR) with a high amount of cis-1,4 units (98.6%) is studied, thanks to in situ wide angle X-ray (WAXS) experiments at room temperature performed in a large range of strain rates. During stretching at a low strain rate (4.2 × 10(-3) s(-1)), SIC in IR occurs at a larger stretching ratio than in NR. As a result, the crystallinity index at a given stretching ratio is lower in IR than in NR, in spite of the similar crosslink densities of the chains involved in the crystallization in both materials. This lower ability for crystallization in IR is attributed to the presence of branching along its backbone and its lower stereoregularity. Conversely, dynamic experiments performed at high strain rates (10(1)/10(2) s(-1)) show for both materials a similar ability to crystallize. This unexpected result is confirmed by monotonic tensile tests performed in a large range of strain rates. The reason is thermodynamic: the chain extension plays a predominant role compared to the role of the microstructure defects when the strain rate is high, i.e. when the kinetics of the crystallite nucleation forces the crystallization to occur at a large stretching ratio. A thermodynamic model enables qualitative reproduction of the experimental results. PMID:26750589

  12. Chemical mechanical polishing (CMP) of sapphire

    NASA Astrophysics Data System (ADS)

    Zhu, Honglin

    The concept of chemical mechanical polishing (CMP) was examined for finishing sapphire. In this study sapphire was used as a model system for oxide ceramics. The removal rates were determined by weight loss. Surface quality and structure were characterized with surface probe microscopy (SPM). Polishing experiments were designed to test the chemically modified surface layer. A series of abrasives with various hardnesses including mono-crystalline and polycrystalline diamond, alpha and gamma alumina, zirconia, ceria and silica were used. Diaspore was also evaluated. The results indicated that, with similar particle size and shape, harder abrasives do not necessarily cause faster material removal and better surface finish, and abrasives with hardness equal to or less than sapphire such as alpha alumina and gamma alumina achieved the best surface finish and efficient material removal. A hypothesis was proposed that the sapphire surface was modified by water to form a thin hydration laver with structure and hardness close to diaspore. Abrasives with a hardness between diaspore and sapphire polished the c-plane of sapphire with good surface finish and efficient removal. SPM indicated the hydration layer on the c-plane surface was about 1 nm thick. Removal rate and surface finish as a function of pH were also examined on c-plane sapphire with nano-alumina abrasives. The removal rate as a function of pH was compared to the solubility behavior of alumina. The results showed the deviation of pH from the lowest solubility pH for alumina (pH = 5) was a driving force for the surface reaction to form a hydration layer. The anisotropy of sapphire strongly affects removal rate and surface quality in CMP. The relationships among orientation. pH and abrasive were studied for sapphire with c (0001), a (11-20), and m (10-10) planes. Based on the results, the CMP process for sapphire includes chemical reaction of the surface to form a thin reaction layer that is softer than sapphire

  13. Residual stresses in sapphire rods grown by the Stepanov method

    NASA Astrophysics Data System (ADS)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Galaktionov, E. V.; Maslov, V. N.; Tropp, E. A.

    2015-04-01

    The residual stresses in cylindrical [0001] sapphire crystals have been studied using the polarization-optical method. The angle between the optical axes 2 V and the difference in the normal components of the tensor of elastic residual stresses (σφ - σ r ) have been determined from the isogyre divergence. It has been found that a tangential tensile stress of no more than 20 MPa acts on the ingot surface. The residual stresses have been compared with the calculated thermoelastic stresses generated during the crystal growth in a given heating zone. It has been shown that the determined pattern of residual stresses can be caused by thermoelastic stresses developing in the immediate vicinity of the crystallization front.

  14. Sapphire reinforced alumina matrix composites

    NASA Technical Reports Server (NTRS)

    Jaskowiak, Martha H.; Setlock, John A.

    1994-01-01

    Unidirectionally reinforced A1203 matrix composites have been fabricated by hot pressing. Approximately 30 volume % of either coated or uncoated sapphire fiber was used as reinforcement. Unstabilized ZrO2 was applied as the fiber coating. Composite mechanical behavior was analyzed both after fabrication and after additional heat treatment. The results of composite tensile tests were correlated with fiber-matrix interfacial shear strengths determined from fiber push-out tests. Substantially higher strength and greater fiber pull-out were observed for the coated fiber composites for all processing conditions studied. The coated fiber composites retained up to 95% and 87% of their as-fabricated strength when heat treated at 14000C for 8 or 24 hours, respectively. Electron microscopy analysis of the fracture surfaces revealed extensive fiber pull-out both before and after heat treatment.

  15. LASE Ti:Sapphire Laser

    NASA Technical Reports Server (NTRS)

    1995-01-01

    In the photo, Dr. Larry B. Petway (Science Applications International Corp.) is making final adjustments to the Ti:Sapphire Laser in preparing the Lidar Atmospheric Sensing Experiment (LASE) Instrument for intergration into a NASA/ER-2 aircraft. LASE is the first fully- engineered, autonomous differential Absorption Lidar (DIAL) System for the measurement of water vapor, aerosol and cloud in the troposphere. LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150mJ/pulse. The laser beam is seeded to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere with accuracy having less than 6% of error. No other instrument can provide the spatial coverage and accuracy of LASE.Water vapor is the most radiative active gas in the troposphere, and the lack of understanding about its distribution provides one of the largest uncertainties in modeling climate change. LASE has demonstrated the necessary potential in providing high resolution water vapor measurements that can advance the studies of tropospheric water vapor distributions. LASE has flown 19 times during the development of the instrument and the validation of the science data. A joint international field mission was completed in the summer of 1996; adding 9 more successful flights. The LASE Instument is being adapted to other aircraft platforms to support planned missions and to increase its utility.

  16. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  17. Temperature dependence of sapphire fiber Raman scattering

    DOE PAGESBeta

    Liu, Bo; Yu, Zhihao; Tian, Zhipeng; Homa, Daniel; Hill, Cary; Wang, Anbo; Pickrell, Gary

    2015-04-27

    Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.

  18. Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties

    NASA Astrophysics Data System (ADS)

    Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng

    2016-08-01

    We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.

  19. The morphology of an epitaxial Mg Al spinel layer on a sapphire surface

    NASA Astrophysics Data System (ADS)

    Liu, Che-Ming; Chen, Jyh-Chen; Chen, Chun-Jen

    2006-07-01

    In this work an epitaxial Mg-Al spinel layer was successfully grown on a C- and A-plane sapphire single crystal surface by solid-state reactions. When observed by a scanning electron microscope, it can be seen that the morphology of an epitaxial spinel layer surface has a three-fold symmetrical structure. The results of X-ray diffraction analysis indicate that the surface morphology of the epitaxial spinel layer has particular crystallographic directions and the crystallographic directions will be influenced by the orientation of the sapphire substrates.

  20. Detection of beryllium treatment of natural sapphires by NRA

    NASA Astrophysics Data System (ADS)

    Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

    2010-06-01

    Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

  1. Thermal and optical behavior of sapphire fiber tips for laser angioplasty

    NASA Astrophysics Data System (ADS)

    Ashley, Simon; Brooks, Stephen G.; Gehani, Abdurrazak A.; Kester, Ralph C.; Rees, Michael R.

    1990-07-01

    Atraumatic rounded contact probes made from artificial sapphire crystal were developed for general laser surgery and are currently being evaluated for use in percutaneous laser angioplasty utilising continuous wave (cw) Nd-YAG energy (1064nm). The thermal and optical characteristics of five different types of rounded sapphire probe [Surgical Laser Technologies (SLT) - SMTR (1.8mm), MTh (2.2mm), MTRL (3.0mm); Living Technology - LT (2.2mm), OS (2.2mm)] were investigated and related to efficiency of contact ablation of arterial wall in vitro. The sapphire probes were mounted on catheters containing a 0.6 mm quartz optical fiber, coupled to a cw Nd-YAG laser. All probes produced a similar beam profile but there was some variation in their forward transmission of energy (54-85%).Probe heating occurs due to energy absorption within the sapphire and was measured in air by infrared thermography. There was a high temperature gradient from the front surface of the sapphires to the probe rim. But, at energy settings used clinically (10 J pulses, 10 Watts for 1 second) the SMTR, MTR, and MTRL probes exhibited a higher mean temperature rise (63-74 C) than the OS and LT probes (20 C) [3-way ANOVA psapphire temperature rise recorded after 5 seconds exposure at 20 Watts was 340 C, but at all energy settings sapphire temperatures were much lower than attained by metal probes. Furthermore, there was relatively little heating of the metal jacket behind the sapphires (maximum 35 C) reducing the risk of thermal injury to surrounding vessel. These properties enhanced contact ablation by the MTR probe relative to the other 2.2mm probes when applied with a downward force of 80 g, perpendicular to fresh porcine aortic segments immersed in whole blood. Penetration efficiencies at energy levels producing the most efficient ablation by each probe were as follows [mean (SD) microns/JI:- MTR 50 (7), LT 9 (5), 05 4 (2), (p

  2. Extended depth-of-field 3D endoscopy with synthetic aperture integral imaging using an electrically tunable focal-length liquid-crystal lens.

    PubMed

    Wang, Yu-Jen; Shen, Xin; Lin, Yi-Hsin; Javidi, Bahram

    2015-08-01

    Conventional synthetic-aperture integral imaging uses a lens array to sense the three-dimensional (3D) object or scene that can then be reconstructed digitally or optically. However, integral imaging generally suffers from a fixed and limited range of depth of field (DOF). In this Letter, we experimentally demonstrate a 3D integral-imaging endoscopy with tunable DOF by using a single large-aperture focal-length-tunable liquid crystal (LC) lens. The proposed system can provide high spatial resolution and an extended DOF in synthetic-aperture integral imaging 3D endoscope. In our experiments, the image plane in the integral imaging pickup process can be tuned from 18 to 38 mm continuously using a large-aperture LC lens, and the total DOF is extended from 12 to 51 mm. To the best of our knowledge, this is the first report on synthetic aperture integral imaging 3D endoscopy with a large-aperture LC lens that can provide high spatial resolution 3D imaging with an extend DOF. PMID:26258358

  3. Variable Synthetic Capacitance

    NASA Technical Reports Server (NTRS)

    Kleinberg, L. L.

    1986-01-01

    Feedback amplifier circuit synthesizes electronically variable capacitance. Variable Synthetic Capacitor is amplifier circuit with follower/feedback configuration. Effective input capacitance depends on input set current. If synthetic capacitor is connected across resonant element of oscillator, oscillator frequency controlled via input set current. Circuit especially suitable for fine frequency adjustments of piezoelectric-crystal or inductor/capacitor resonant oscillators.

  4. High Q Miniature Sapphire Acoustic Resonator

    NASA Technical Reports Server (NTRS)

    Wang, Rabi T.; Tjoelker, R. L.

    2010-01-01

    We have demonstrated high Q measurements in a room temperature Miniature Sapphire Acoustic Resonator (MSAR). Initial measurements of bulk acoustic modes in room temperature sapphire at 39 MHz have demonstrated a Q of 8.8 x 10(exp 6). The long term goal of this work is to integrate such a high Q resonator with small, low noise quartz oscillator electronics, providing a fractional frequency stability better than 1 x 10(exp -14) @ 1s.

  5. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  6. Development of an efficient Ti:sapphire laser transmitter for atmospheric ozone lidar measurements

    NASA Astrophysics Data System (ADS)

    Elsayed, Khaled Abdelsabour

    The impetus of this work was to develop an all solid-state Ti:sapphire laser transmitter to replace the current dye lasers that could provide a potentially compact, robust, and highly reliable laser transmitter for differential absorption lidar measurements of atmospheric ozone. Two compact, high-energy pulsed, and injection-seeded Ti:sapphire lasers operating at a pulse repetition frequency of 30 Hz and wavelengths of 867 nm and 900 nm, with M2 of 1.3, have been experimentally demonstrated and compared to model results. The Ti:sapphire lasers have shown the required output beam quality at maximum output pulse energy, 115 mJ at 867 nm and 105 mJ at 900 nm, with a slope efficiency of 40% and 32%, respectively, to achieve 30 mJ of ultraviolet laser output at 289 run and 300 nm with two LBO nonlinear crystals.

  7. Cyclic fatigue-crack propagation in sapphire in air and simulated physiological environments.

    PubMed

    Asoo, B; McNaney, J M; Mitamura, Y; Ritchie, R O

    2000-12-01

    Single-crystal aluminas are being considered for use in the manufacture of prosthetic heart valves. To characterize such materials for biomedical application, subcritical crack growth by stress corrosion (static fatigue) and by cyclic fatigue has been examined in sapphire along (1100) planes in 24 degrees C humid air and 37 degrees C Ringer's solution (the latter as a simulated physiological environment). The relationships between crack-propagation rates and the linear-elastic stress intensity have been determined for the first time in sapphire for both modes of subcritical cracking. It was found that growth rates were significantly faster at a given stress intensity in the Ringer's solution compared to the humid air environment. Mechanistically, a true cyclic fatigue effect was not found in sapphire as experimentally measured cyclic fatigue-crack growth rates could be closely predicted simply by integrating the static fatigue-crack growth data over the cyclic loading cycle. PMID:11007616

  8. Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

    NASA Technical Reports Server (NTRS)

    Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

    2004-01-01

    This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

  9. Interfacial Shear Strength of Cast and Directionally Solidified Nial-Sapphire Fiber Composites

    NASA Technical Reports Server (NTRS)

    Tewari, S. N.; Asthana, R.; Noebe, R. D.

    1993-01-01

    The feasibility of fabricating intermetallic NiAl-sapphire fiber composites by casting and zone directional solidification has been examined. The fiber-matrix interfacial shear strengths measured using a fiber push-out technique in both cast and directionally solidified composites are greater than the strengths reported for composites fabricated by powder cloth process using organic binders. Microscopic examination of fibers extracted from cast, directionally solidified (DS), and thermally cycled composites, and the high values of interfacial shear strengths suggest that the fiber-matrix interface does not degrade due to casting and directional solidification. Sapphire fibers do not pin grain boundaries during directional solidification, suggesting that this technique can be used to fabricate sapphire fiber reinforced NiAl composites with single crystal matrices.

  10. Rate of F center formation in sapphire under low-energy low-fluence Ar+ irradiation

    NASA Astrophysics Data System (ADS)

    Epie, E. N.; Wijesundera, D. N.; Tilakaratne, B. P.; Chen, Q. Y.; Chu, W. K.

    2016-03-01

    Ionoluminescence, optical absorption spectroscopy and Rutherford backscattering spectrometry channelling (RBS-C) have been used to study the rate of F center formation with fluence in 170 keV Ar+ irradiated single crystals of α-Al2O3 (sapphire) at room temperature. Implantation fluences range between 1013 cm-2 and 5 ×1014 cm-2. F center density (NF) has been found to display an initial rapid linear increase with Ar+ fluence followed by saturation to a maximum value of 1.74 ×1015 cm-2. Experimental results show a 1-1 correlation between radiation damage in the oxygen sublattice and F center density. This suggest F center kinetics in sapphire under low-energy low-fluence Ar irradiation is a direct consequence of dynamic competition between oxygen defect creation and recombination. An attempt has also been made to extend this discussion to F center kinetics in sapphire under swift heavy ion irradiation.

  11. Synthetic Hemozoin (β-Hematin) Crystals Nucleate at the Surface of Neutral Lipid Droplets that Control Their Sizes

    PubMed Central

    Ambele, Melvin A.; Sewell, B. Trevor; Cummings, Franscious R.; Smith, Peter J.; Egan, Timothy J.

    2013-01-01

    Emulsions of monopalmitoylglycerol (MPG) and of a neutral lipid blend (NLB), consisting of MPG, monostearoylglycerol, dipalmitoylglycerol, dioleoylglycerol and dilineoylglycerol (4:2:1:1:1), the composition associated with hemozoin from the malaria parasite Plasmodium falciparum, have been used to mediate the formation of β-hematin microcrystals. Transmission electron microscopy (TEM), electron diffraction and electron spectroscopic imaging/electron energy loss spectroscopy (ESI/EELS) have been used to characterize both the lipid emulsion and β-hematin crystals. The latter have been compared with β-hematin formed at a pentanol/aqueous interface and with hemozoin both within P. falciparum parasites and extracted from the parasites. When lipid and ferriprotoporphyrin IX solutions in 1:9 v/v acetone/methanol were thoroughly pre-mixed either using an extruder or ultrasound, β-hematin crystals were found formed in intimate association with the lipid droplets. These crystals resembled hemozoin crystals, with prominent {100} faces. Lattice fringes in TEM indicated that these faces made contact with the lipid surface. The average length of these crystals was 0.62 times the average diameter of NLB droplets and their size distributions were statistically equivalent after 10 min incubation, suggesting that the lipid droplets also controlled the sizes of the crystals. This most closely resembles hemozoin formation in the helminth worm Schistosoma mansoni, while in P. falciparum, crystal formation appears to be associated with the much more gently curved digestive vacuole membrane which apparently leads to formation of much larger hemozoin crystals, similar to those formed at the flat pentanol-water interface. PMID:24244110

  12. Temperature Compensated Sapphire Resonator for Ultrastable Oscillator Operating at Temperatures Near 77 Deg Kelvin

    NASA Technical Reports Server (NTRS)

    Dick, G. John (Inventor); Santiago, David G. (Inventor)

    1999-01-01

    A sapphire resonator for an ultrastable oscillator capable of substantial performance improvements over the best available crystal quartz oscillators in a compact cryogenic package is based on a compensation mechanism enabled by the difference between copper and sapphire thermal expansion coefficients for so tuning the resonator as to cancel the temperature variation of the sapphire's dielectric constant. The sapphire resonator consists of a sapphire ring separated into two parts with webs on the outer end of each to form two re-entrant parts which are separated by a copper post. The re-entrant parts are bonded to the post by indium solder for good thermal conductivity between parts of that subassembly which is supported on the base plate of a closed copper cylinder (rf shielding casing) by a thin stainless steel cylinder. A unit for temperature control is placed in the stainless steel cylinder and is connected to the subassembly of re-entrant parts and copper post by a layer of indium for good thermal conduction. In normal use, the rf shielding casing is placed in a vacuum tank which is in turn placed in a thermos flask of liquid nitrogen. The temperature regulator is controlled from outside the thermos flask to a temperature in a range of about 40K to 150K, such as 87K for the WGH-811, mode of resonance in response to microwave energy inserted into the rf shielding casing through a port from an outside source.

  13. Measurement of optical extinction coefficients in sapphire as a function of the shock pressure

    NASA Astrophysics Data System (ADS)

    Zhou, Xianming; Li, Jun; Li, Jiabo

    2009-06-01

    Sapphire has been extensively used as a window material for both optical and thermal property measurements of shocked materials. Its optical extinction characteristic under dynamic compression is crucial in understanding the measured physical behaviors. Here we demonstrated a quantitative study of the dynamic optical extinction of sapphire in the shock pressure range from 72 to 183 GPa. Along its <1000> orientation, the optical extinction coefficient (α) of sapphire crystal has been in-situ measured at several discrete wavelengths with an optical pyrometer incorporated with a shock-generated bright light source. The significant findings indicated that: (i) the α coefficient increases with the shock pressure but decreases with the wavelength, showing a quite different behavior from that observed in the low-pressure compression in the literature; (ii) the obtained linear relationship between the square-root of α coefficient and the photon energy can be well described by a Mie scattering calculation assuming a particle radii of ˜140nm, which suggests that the optical extinction of sapphire is attributed to a light scattering mechanism related with the shock-induced crack-net distribution in this strong brittle material. These quantitative extinction data have provided new insight into the decay nature of thermal radiance histories previously concerned at a metal/sapphire interface, which is crucial for inferring an interfacial equilibrium temperature.

  14. BBO sapphire compound for high-power frequency conversion

    NASA Astrophysics Data System (ADS)

    Rothhardt, Carolin; Rothhardt, Jan; Klenke, Arno; Peschel, Thomas; Eberhardt, Ramona; Limpert, Jens; Tünnermann, Andreas

    2015-02-01

    Lasers used for diverse applications from industry to fundamental science tend to increasing output powers. Some applications require frequency conversion via nonlinear optical crystals, which suffer from the formation of temperature gradients at high power operation which causes thermal lensing or destruction of the crystal due to tensile stresses. To avoid these unwanted effects we joined a beta barium borate (BBO) crystal with sapphire disks serving as effective heat spreaders due to their high thermal conductivity (thermal conductivity κ = 42 W/Km). Therefore, smooth and flat crystal surfaces were joined by plasma-activated bonding. The joining relies on covalent bonds, which are formed via a condensation reaction of the surfaces which are first connected by Van der Waals forces. The cleaned surfaces are activated by plasma and brought into contact, pressed together and heat treated at a temperature of about 100°C. Special attention has been paid to the cleaning of the surfaces. Therefor the surfaces have been evaluated before and after treatment by means of atomic force microscopy. A stable connection has been formed successfully, which has been tested in a proof of principle experiment and demonstrated efficient second harmonic generation at up to 253 W of input power. Compared to a bare single BBO crystal it could be shown that the temperature within the crystal compound is significantly reduced. Such hybrid structures pave the way for frequency conversion at kilowatts of average power for future high power lasers.

  15. X-ray structure of snow flea antifreeze protein determined by racemic crystallization of synthetic protein enantiomers.

    PubMed

    Pentelute, Brad L; Gates, Zachary P; Tereshko, Valentina; Dashnau, Jennifer L; Vanderkooi, Jane M; Kossiakoff, Anthony A; Kent, Stephen B H

    2008-07-30

    Chemical protein synthesis and racemic protein crystallization were used to determine the X-ray structure of the snow flea antifreeze protein (sfAFP). Crystal formation from a racemic solution containing equal amounts of the chemically synthesized proteins d-sfAFP and l-sfAFP occurred much more readily than for l-sfAFP alone. More facile crystal formation also occurred from a quasi-racemic mixture of d-sfAFP and l-Se-sfAFP, a chemical protein analogue that contains an additional -SeCH2- moiety at one residue and thus differs slightly from the true enantiomer. Multiple wavelength anomalous dispersion (MAD) phasing from quasi-racemate crystals was then used to determine the X-ray structure of the sfAFP protein molecule. The resulting model was used to solve by molecular replacement the X-ray structure of l-sfAFP to a resolution of 0.98 A. The l-sfAFP molecule is made up of six antiparallel left-handed PPII helixes, stacked in two sets of three, to form a compact brick-like structure with one hydrophilic face and one hydrophobic face. This is a novel experimental protein structure and closely resembles a structural model proposed for sfAFP. These results illustrate the utility of total chemical synthesis combined with racemic crystallization and X-ray crystallography for determining the unknown structure of a protein. PMID:18598029

  16. X-ray Structure of Snow Flea Antifreeze Protein Determined by Racemic Crystallization of Synthetic Protein Enantiomers

    SciTech Connect

    Pentelute, Brad L.; Gates, Zachary P.; Tereshko, Valentina; Dashnau, Jennifer L.; Vanderkooi, Jane M.; Kossiakoff, Anthony A.; Kent, Stephen B.H.

    2008-08-20

    Chemical protein synthesis and racemic protein crystallization were used to determine the X-ray structure of the snow flea antifreeze protein (sfAFP). Crystal formation from a racemic solution containing equal amounts of the chemically synthesized proteins d-sfAFP and l-sfAFP occurred much more readily than for l-sfAFP alone. More facile crystal formation also occurred from a quasi-racemic mixture of d-sfAFP and l-Se-sfAFP, a chemical protein analogue that contains an additional -SeCH2- moiety at one residue and thus differs slightly from the true enantiomer. Multiple wavelength anomalous dispersion (MAD) phasing from quasi-racemate crystals was then used to determine the X-ray structure of the sfAFP protein molecule. The resulting model was used to solve by molecular replacement the X-ray structure of l-sfAFP to a resolution of 0.98 {angstrom}. The l-sfAFP molecule is made up of six antiparallel left-handed PPII helixes, stacked in two sets of three, to form a compact brick-like structure with one hydrophilic face and one hydrophobic face. This is a novel experimental protein structure and closely resembles a structural model proposed for sfAFP. These results illustrate the utility of total chemical synthesis combined with racemic crystallization and X-ray crystallography for determining the unknown structure of a protein.

  17. Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

    SciTech Connect

    Song, Ning E-mail: n.song@student.unsw.edu.au; Huang, Yidan; Li, Wei; Huang, Shujuan; Hao, Xiaojing E-mail: n.song@student.unsw.edu.au; Wang, Yu; Hu, Yicong

    2014-03-03

    The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

  18. Acoustic and NMR investigations of melting and crystallization of indium-gallium alloys in pores of synthetic opal matrices

    NASA Astrophysics Data System (ADS)

    Pirozerskii, A. L.; Charnaya, E. V.; Lee, M. K.; Chang, L. J.; Nedbai, A. I.; Kumzerov, Yu. A.; Fokin, A. V.; Samoilovich, M. I.; Lebedeva, E. L.; Bugaev, A. S.

    2016-05-01

    The paper presents the results of studying the crystallization and melting processes of Ga-In eutectic alloys, which are embedded in opal matrices, using acoustic and NMR methods. The indium concentrations in the alloys were 4, 6, 9, and 15 at %. Measurements were performed upon cooling from room temperature to complete crystallization of the alloys and subsequent heating. It is revealed how the size effects and alloy composition influence the formation of phases with α- and β-Ga structures and on changes in the melting-temperature ranges. A difference was observed between the results obtained using acoustic and NMR methods, which was attributed to different temperature measurement conditions.

  19. The crystal structure analysis of d(CGCGAASSCGCG)2, a synthetic DNA dodecamer duplex containing four 4'-thio-2'-deoxythymidine nucleotides.

    PubMed Central

    Boggon, T J; Hancox, E L; McAuley-Hecht, K E; Connolly, B A; Hunter, W N; Brown, T; Walker, R T; Leonard, G A

    1996-01-01

    The crystal structure refinement of the synthetic dodecamer d(CGCGAASSCGCG), where S = 4'-thio-2'-deoxythymidine, has converged at R=0.201 for 2605 reflections with F > 2sigma(F) in the resolution range 8.0-2.4 A for a model consisting of the dodecamer duplex and 66 water molecules. A comparison of its structure with that of the native dodecamer d(CGCGAATTCGCG) has revealed that the major differences between the two structures is a change in the conformation of the sugar-phosphate backbone in the regions at and adjacent to the positions of the modified nucleosides. Examination of the fine structural parameters for each of the structures reveals that the thiosugars adopt a C3'-exo conformation in d(CGCGAASSCGCG), rather than the approximate C1'-exo conformation found for the analogous sugars in the structure of d(CGCGAATTCGCG). The observed differences in structure between the two duplexes may help to explain the enhanced resistance to nuclease digestion of synthetic oligonucleotides containing 4'-thio-2'-deoxynucleotides. PMID:8600465

  20. Anisotropic Transverse Stress in Calcite and Sapphire Measured Using Birefringence

    NASA Astrophysics Data System (ADS)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2015-06-01

    Many significant geological minerals have anisotropic crystal structures leading to material properties that are anisotropic, including compressive elastic behaviour. A non-invasive approach to investigate the directional dependence of transverse stress in these materials during shock compression would supplement current understanding. As many geological minerals are transparent and hence optically anisotropic, measuring the change in birefringence induced by transverse stress in the material offers the possibility of a fast, non-invasive approach to probe transverse behaviour. Shock compression experiments have been performed on a-cut calcite and a-cut sapphire for strain rates of order 105 s-1 and up to longitudinal stresses of 2 GPa for calcite and 12 GPa for sapphire. We present measured changes in birefringence for these materials under shock compression, comparing with current and past literature as well as an in house optical model. The authors would like to thank Mr Steve Johnson and Mr David Pittman for technical support. The Institute of Shock Physics acknowledges the continued support of AWE and Imperial College London.

  1. Temperature behavior of damage in sapphire implanted with light ions

    NASA Astrophysics Data System (ADS)

    Alves, E.; Marques, C.; Sáfrán, G.; McHargue, Carl J.

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016-1 × 1017 cm-2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm-2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  2. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    PubMed

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser. PMID:20300165

  3. Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin-An; Xue, Jun-Shuai; Cao, Rong-Tao; Xu, Sheng-Rui; Zhang, Jin-Cheng; Hao, Yue

    2014-06-01

    We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal—organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

  4. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  5. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1975-01-01

    Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  6. Enhanced performances of diode-pumped sapphire/Er³⁺:Yb³⁺:LuAl₃(BO₃)₄/sapphire micro-laser at 1.5-1.6 μm.

    PubMed

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2015-05-01

    A sandwich-type sapphire/Er3+:Yb3+:LuAl3(BO3)4/sapphire micro-laser was fabricated by tightly pressing two sapphire crystals and a Er3+:Yb3+:LuAl3(BO3)4 microchip together, and directly depositing cavity mirrors onto the outside surfaces of the sapphire crystals. Pumped by a continuous-wave 976 nm diode laser, a 1543 nm laser with maximum output power of 1.17 W and slope efficiency of 33% with respect to incident pump power was realized in the sandwich-type micro-laser, whereas a laser with maximum output power of 0.46 W and slope efficiency of 17% was obtained in a monolithic Er3+:Yb3+:LuAl3(BO3)4 micro-laser. Furthermore, efficient 1521 nm continuous-wave and passively Q-switched pulse lasers were also demonstrated in the sandwich-type micro-laser. PMID:25969325

  7. Final EDP Ti: sapphire amplifiers for ELI project

    NASA Astrophysics Data System (ADS)

    Chvykov, Vladimir; Kalashnikov, Mikhail; Osvay, Károly

    2015-05-01

    Recently several ultrahigh intensity Chirped Pulse Amplification (CPA) laser systems have reached petawatt output powers [1, 2] setting the next milestone at tens or even hundreds petawatts for the next three to ten years [3, 4]. These remarkable results were reached when laser amplifiers (opposite to Optical Parametric Amplification (OPA) [5]) were used as final ones and from them Ti:Sapphire crystals supposed to be the working horses as well in the future design of these laser systems. Nevertheless, the main limitation that arises on the path toward ultrahigh output power and intensity is the restriction on the pumping and extraction energy imposed by Transverse Amplified Spontaneous Emission (TASE) [6] and/or transverse parasitic generation (TPG) [7] within the large aperture of the disc-shape amplifier volume.

  8. Growth of sapphire and oxide eutectic fibers by the EFG technique

    NASA Astrophysics Data System (ADS)

    Kurlov, V. N.; Stryukov, D. O.; Shikunova, I. A.

    2016-01-01

    Single-crystal sapphire and oxide binary (Al2O3-Y3Al5O12, Al2O3-Er3Al5O12, Al2O3- GdAlO3) and ternary (Al2O3-ZrO2(Y2O3)) eutectic fibers of 150-300 µm in diameters were grown by the edge-defined film-fed growth (EFG) technique. Microstructure and some properties of fibers were investigated.

  9. Temperature-Compensated Sapphire Microwave Resonator

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Santiago, David G.

    1996-01-01

    Sapphire-dielectric-ring microwave resonator operating in "whispering-gallery" electromagnetic mode features differential-thermal-expansion design providing temperature compensation for ultrahigh frequency stability. Designed to minimize frequency fluctuations caused by temperature fluctuations at normal temperature equal to or even somewhat greater than temperature of liquid nitrogen. Ancillary equipment needed for operation smaller and less expensive, and liquid nitrogen used as coolant.

  10. Silicon on sapphire for ion implantation studies

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.

    1974-01-01

    Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

  11. Tailoring of crystal phase and Néel temperature of cobalt monoxides nanocrystals with synthetic approach conditions

    NASA Astrophysics Data System (ADS)

    Ravindra, A. V.; Behera, B. C.; Padhan, P.; Lebedev, O. I.; Prellier, W.

    2014-07-01

    Cobalt monoxide (CoO) nanocrystals were synthesized by thermal decomposition of cobalt oleate precursor in a high boiling point organic solvent 1-octadecene. The X-ray diffraction pattern and transmission electron microscopy studies suggest that pure face-centered-cubic (fcc) phase of CoO can be synthesized in the temperature range of 569-575 K. Thermolysis product at higher synthesis temperature 585 K is a mixture of fcc and hexagonal-closed-packed (hcp) phases. These nanocrystals are single crystals of CoO and exhibit mixture of two types of morphologies; one is nearly spherical with 5-25 nm diameter, and other one is 5-10 nm thick flake. The pure fcc-CoO nanocrystals show enhanced, and mixture of fcc- and hcp-CoO nanocrystals show reduced antiferromagnetic ordering temperature. Such results provide new opportunities for optimizing and enhancing the properties and performance of cobalt oxide nanomaterials.

  12. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    NASA Astrophysics Data System (ADS)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  13. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    SciTech Connect

    Oleson, Timothy A.; Sahai, Nita; Wesolowski, David J; Dura, Joseph A; Majkrzak, Charles F; Giuffre, Anthony J.

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  14. Formation of Hematite fine crystals by hydrothermal alteration of synthetic Martian basalt, static and fluid flow experiments

    NASA Astrophysics Data System (ADS)

    Kobayashi, K.; Isobe, H.

    2011-12-01

    Exploration made by Martian rovers and probes provided enormous information on the composition of the Martian surface materials. Origin and formation processes of the Martian surface materials should be various depending on topography and history of the Martian crust. Especially, iron minerals in the Martian soil should have essential role to characterize surface environment of the "red planet". In the present study, experimental reproduction of the Martian soil was carried out by hydrothermal alteration of the synthetic iron-rich basaltic rock. Experimental conditions for temperature and fluid composition followed Isobe and Yoshizawa (2010). Static alteration experiments are carried out at 100 °C and 150 °C, and mass ratio of the starting material to the pH1.0 sulfuric acid solution is 1:50. Run durations are 1, 2, 4 or 8 weeks. Appropriate mass of dry ice was sealed in the experimental vessels to expel atmospheric oxygen with CO2. For the static experiments, powdered starting materials were charged in PFA vial to keep textures of the run products. For the fluid flow experiments, we constructed closed loop with Teflon tube inclined approximately 45°. One of the vertical tube is charged with crushed synthetic basalt and heated approximately 150°C by aluminum block with ribbon heater. Surlfuric acid solution flows through the tube from bottom to top and cooled at the end of the aluminum block. Cooled solution returns to the bottom of the heated tube through another vertical tube without heating block. In the static condition run products, characteristic iron mineral particles are formed for 100°C and 150°C concordant with Isobe and Yoshizawa (2010). These iron minerals distributed not only inside the starting material powder but also on the surface of the reaction vessel and the PFA vial in the reactive solution. The surface of the reaction vessel shows orange and reddish color on 100°C and 150°C run products, respectively. By SEM observation, dissolution of

  15. Tailoring of crystal phase and Néel temperature of cobalt monoxides nanocrystals with synthetic approach conditions

    SciTech Connect

    Ravindra, A. V.; Behera, B. C.; Padhan, P.; Lebedev, O. I.; Prellier, W.

    2014-07-21

    Cobalt monoxide (CoO) nanocrystals were synthesized by thermal decomposition of cobalt oleate precursor in a high boiling point organic solvent 1-octadecene. The X-ray diffraction pattern and transmission electron microscopy studies suggest that pure face-centered-cubic (fcc) phase of CoO can be synthesized in the temperature range of 569–575 K. Thermolysis product at higher synthesis temperature 585 K is a mixture of fcc and hexagonal-closed-packed (hcp) phases. These nanocrystals are single crystals of CoO and exhibit mixture of two types of morphologies; one is nearly spherical with 5–25 nm diameter, and other one is 5–10 nm thick flake. The pure fcc-CoO nanocrystals show enhanced, and mixture of fcc- and hcp-CoO nanocrystals show reduced antiferromagnetic ordering temperature. Such results provide new opportunities for optimizing and enhancing the properties and performance of cobalt oxide nanomaterials.

  16. External-cavity frequency doubling of a 5-W 756-nm injection-locked Ti:sapphire laser.

    PubMed

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2008-03-31

    We have developed a 5-W 756-nm injection-locked Ti:sapphire laser and frequency-doubled it in an external enhancement cavity for the generation of watt-level 378-nm single-frequency radiation, which is essential for isotope-selective optical pumping of thallium atoms. With a lithium triborate (LBO) crystal in the enhancement cavity, 1.1 W at 378 nm was coupled out from the cavity. Such results are to our knowledge the highest powers of continuous-wave single-frequency radiation generated from a Ti:sapphire laser and its frequency doubling. PMID:18542585

  17. Crystal violet: Study of the photo-fading of an early synthetic dye in aqueous solution and on paper with HPLC-PDA, LC-MS and FORS

    NASA Astrophysics Data System (ADS)

    Confortin, Daria; Neevel, Han; Brustolon, Marina; Franco, Lorenzo; Kettelarij, Albert J.; Williams, Renè M.; van Bommel, Maarten R.

    2010-06-01

    The photo-fading of crystal violet (CV), one of the earliest synthetic dyes and an ink component, is examined both in solution and on paper. Aqueous solutions of CV were exposed to UV light (365nm) and samples were taken at constant time intervals and analysed with a High Performance Liquid Chromatography-Photo Diode Array (HPLC-PDA) and Liquid Chromatography-Mass Spectroscopy (LC-MS). Demethylation products were positively identified. Also, deamination probably occurred. The oxidation at the central carbon likely generates Michler's ketone (MK) or its derivatives, but still needs confirmation. To study CV on paper, Whatman paper was immersed in CV and exposed to UV light. Before and after different irradiation periods, reflectance spectra were recorded with Fibre Optic Reflectance Spectrophotometry (FORS). A decrease in CV concentration and a change in aggregation type for CV molecules upon irradiation was observed. Colorimetric L*a*b* values before and during irradiation were also measured. Also, CV was extracted from paper before and after different irradiation periods and analysed with HPLC-PDA. Photo-fading of CV on paper produced the same products as in solution, at least within the first 100 hours of irradiation. Finally, a photo-fading of CV in the presence of MK on Whatman paper was performed. It was demonstrated that MK both accelerates CV degradation and is consumed during the reaction. The degradation pathway identified in this work is suitable for explaining the photo/fading of other dyes belonging to the triarylmethane group.

  18. Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

    SciTech Connect

    Pillon, M.; Angelone, M.; Aielli, G.; Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.

    2008-09-01

    Diamond exhibits many properties such as an outstanding radiation hardness and fast response time both important to design detectors working in extremely radioactive environments. Among the many applications these devices can be used for, there is the development of a fast and radiation hard neutron detector for the next generation of fusion reactors, such as the International Thermonuclear Experimental Reactor project, under construction at Cadarache in France. A technology to routinely produce electronic grade synthetic single crystal diamond detectors was recently developed by our group. One of such detectors, with an energy resolution of 0.9% as measured using an {sup 241}Am{alpha} particle source, has been heavily irradiated with 14.8 MeV neutrons produced by the Frascati Neutron Generator. The modifications of its spectroscopic properties have been studied as a function of the neutron fluence up to 2.0x10{sup 14} n/cm{sup 2}. In the early stage of the irradiation procedure an improvement in the spectroscopic performance of the detector was observed. Subsequently the detection performance remains stable for all the given neutron fluence up to the final one thus assessing a remarkable radiation hardness of the device. The neutron damage in materials has been calculated and compared with the experimental results. This comparison is discussed within the nonionizing energy loss (NIEL) hypothesis, which states that performance degradation is proportional to NIEL.

  19. Thermodynamic effects of calcium and iron oxides on crystal phase formation in synthetic gasifier slags containing from 0 to 27wt.% V2O3

    DOE PAGESBeta

    Nakano, Jinichiro; Duchesne, Marc; Bennett, James; Kwong, Kyei -Sing; Nakano, Anna; Hughes, Robin

    2014-11-15

    Thermodynamic phase equilibria in synthetic slags (Al2O3–CaO–FeO–SiO2–V2O3) were investigated with 0–27 wt.% vanadium oxide corresponding to industrial coal–petroleum coke (petcoke) feedstock blends in a simulated gasifier environment. Samples encompassing coal–petcoke mixed slag compositions were equilibrated at 1500 °C in a 64 vol.% CO/36 vol.% CO2 atmosphere (Po2 ≈ 10–8 atm at 1500 °C) for 72 h, followed by rapid water quench, then analyzed by inductively coupled plasma optical emission spectrometry, X-ray diffractometry, and scanning electron microscopy with wavelength dispersive spectroscopy. With increasing CaO content, FeO content, or both; the slag homogeneity region expanded and a composition range exhibiting crystals wasmore » reduced. The mullite (Al6Si2O13) crystalline phase was not present in the slags above 9 wt.% FeO while the karelianite (V2O3) crystalline phase was always present in compositions studied if a sufficient amount of vanadium existed in the slag. Furthermore, based on the present experimental equilibrium evaluation, a set of isothermal phase diagrams showing effects of CaO and FeO on thermodynamic phase stabilities in the vanadium-bearing slags is proposed. Some uses of the diagrams for potential industrial practice are discussed.« less

  20. Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

    NASA Astrophysics Data System (ADS)

    Pillon, M.; Angelone, M.; Aielli, G.; Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.

    2008-09-01

    Diamond exhibits many properties such as an outstanding radiation hardness and fast response time both important to design detectors working in extremely radioactive environments. Among the many applications these devices can be used for, there is the development of a fast and radiation hard neutron detector for the next generation of fusion reactors, such as the International Thermonuclear Experimental Reactor project, under construction at Cadarache in France. A technology to routinely produce electronic grade synthetic single crystal diamond detectors was recently developed by our group. One of such detectors, with an energy resolution of 0.9% as measured using an A241m α particle source, has been heavily irradiated with 14.8 MeV neutrons produced by the Frascati Neutron Generator. The modifications of its spectroscopic properties have been studied as a function of the neutron fluence up to 2.0×1014 n/cm2. In the early stage of the irradiation procedure an improvement in the spectroscopic performance of the detector was observed. Subsequently the detection performance remains stable for all the given neutron fluence up to the final one thus assessing a remarkable radiation hardness of the device. The neutron damage in materials has been calculated and compared with the experimental results. This comparison is discussed within the nonionizing energy loss (NIEL) hypothesis, which states that performance degradation is proportional to NIEL.

  1. Crystal-structure and FTIR spectroscopy of synthetic Na(NaMg)Mg5Si8O22(OH)2, a P21/m amphibole

    NASA Astrophysics Data System (ADS)

    Iezzi, G.; Camara, F.; della Ventura, G.; Oberti, R.; Holtz, F.

    2003-04-01

    Na(NaMg)Mg_5Si_8O22(OH)_2 is an interesting amphibole composition never found in nature, which has been the object of much experimental work (Maresch and Langer, 1976; Raudsepp et al., 1991). It typically gives very high-yield run-products, consisting of extremely acicular and well formed crystals, generally less than 1 or 2 μm wide. X-ray powder analysis suggested various symmetries and space groups. The IR spectrum in the OH region consists of two major absorbances: a single well-resolved and rather sharp band at 3714 cm-1, and a broader band, possibly consisting of three overlapping components, centred at 3743 cm-1. No clear explanations for such a pattern have been provided so far. We prepared four samples, using hydrothermal techniques, at the following T and P conditions: 750, 800 and 850^oC and 0.4 GPa and 900^oC and 0.5 GPa. Runs at 800^oC and 900^oC yielded crystals suitable for single-crystal X-ray data collection. All samples have P2_1/m symmetry, similarly to what found by Oberti et al. (2002) for a similar composition with excess water synthesised by W. Maresch. This symmetry implies non equivalence of the two double-chains of tetrahedra facing base-to-base, which is mainly expressed by different degrees of stretching and kinking. There are also two independent anion sites (O3A and O3B) which may be occupied by OH. This feature explains the IR pattern. The band at 3743 cm-1 is assigned to the shorter O3B-H2 bond, whereas the 3715 cm-1 is assigned to the longer O3A-H1 bond. In addition, the broader shape of the higher-frequency, 3743 cm-1 band, suggests a stronger interaction of the O3B-H2 dipole with ^ANa, which is confirmed by structure refinement. Increasing T of syntheses implies progressive departure from the ideal stoichiometry via the ^BMg^ANa-1 exchange, which has been characterised by EMPA, structure refinement and FTIR spectroscopy. The latter in particular can now be used to detect unusual symmetries in X-ray powder patterns of synthetic

  2. Measurement of the dielectric properties of high-purity sapphire at 1.865 GHZ from 2-10 Kelvin

    SciTech Connect

    N. Pogue, P. McIntyre, Akhdiyor Sattarov, Charles Reece

    2012-06-01

    A dielectric test cavity was designed and tested to measure the microwave dielectric properties of ultrapure sapphire at cryogenic temperatures. Measurements were performed by placing a large cylindrical crystal of sapphire in a Nb superconducting cavity operating in the TE01 mode at 1.865 GHz. The dielectric constant, heat capacity, and loss tangent were all calculated using experimental data and RF modeling software. The motivation for these measurements was to determine if such a sapphire could be used as a dielectric lens to focus the magnetic field onto a sample wafer in a high field wafer test cavity. The measured properties have been used to finalize the design of the wafer test cavity.

  3. Sapphire Viewports for a Venus Probe

    NASA Technical Reports Server (NTRS)

    Bates, Stephen

    2012-01-01

    A document discusses the creation of a viewport suitable for use on the surface of Venus. These viewports are rated for 500 C and 100 atm pressure with appropriate safety factors and reliability required for incorporation into a Venus Lander. Sapphire windows should easily withstand the chemical, pressure, and temperatures of the Venus surface. Novel fixture designs and seals appropriate to the environment are incorporated, as are materials compatible with exploration vessels. A test cell was fabricated, tested, and leak rate measured. The window features polish specification of the sides and corners, soft metal padding of the sapphire, and a metal C-ring seal. The system safety factor is greater than 2, and standard mechanical design theory was used to size the window, flange, and attachment bolts using available material property data. Maintenance involves simple cleaning of the window aperture surfaces. The only weakness of the system is its moderate rather than low leak rate for vacuum applications.

  4. Surface modification of sapphire by ion implantation

    SciTech Connect

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  5. Failure Analysis of Sapphire Refractive Secondary Concentrators

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Quinn, George D.

    2009-01-01

    Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

  6. Shear strength of metal-sapphire contacts

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1976-01-01

    The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

  7. Modified porous silica antireflective coatings with laser damage resistance for Ti:sapphire

    NASA Astrophysics Data System (ADS)

    Jia, Qiaoying; Li, Haiyuan; Liu, Ruijun; Tang, Yongxing; Jiang, Zhonghong

    2005-04-01

    Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

  8. High-energy large-aperture Ti:sapphire amplifier for 5 PW laser pulses.

    PubMed

    Chu, Yuxi; Gan, Zebiao; Liang, Xiaoyan; Yu, Lianghong; Lu, Xiaoming; Wang, Cheng; Wang, Xinliang; Xu, Lu; Lu, Haihe; Yin, Dingjun; Leng, Yuxin; Li, Ruxin; Xu, Zhizhan

    2015-11-01

    We report on the generation of 192.3 J centered at 800 nm wavelength from a chirped-pulse amplification (CPA) Ti:sapphire laser system. The experimental results demonstrate that parasitic lasing can be suppressed successfully in the final amplifier based on a Ti:sapphire crystal of 150 mm in diameter. An over 50% pump-to-signal conversion efficiency was measured for the final amplifier by optimizing the time delay of two pump pulses and enhancing the injected seed energy. With 72% compressor throughput efficiency and 27 fs long compressed pulse duration obtained at a lower energy level, this laser could potentially support a compressed laser pulse of 5.13 PW peak power. The experimental results represent notable progress regarding the CPA laser. PMID:26512506

  9. High-Temperature Mechanical Properties of Cr(3+) Doped Sapphire Fibers

    NASA Technical Reports Server (NTRS)

    Sayir, A.; QuispeCancapa, J. J.; deArellanoLopez, A. R.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    High-temperature slow-crack growth of single crystal 10 wt% Cr2O3 - Al2O3 (nominal composition) fibers has been studied by tensile rupture experiments at 1400 C, under different stressing rates (0.5 to 41.5 MPa/s). Slow-crack growth (SCG) is less pronounced with increasing Cr2O3. Rupture stresses increased with the stressing rate from 397 MPa to 515 MPa, resulting in a SCG exponent, N=19. The Cr2O3 composition was analyzed by Energy Dispersed X-Ray Spectra (EDS) and fracture surfaces were studied by scanning electron microscopy (SEM). Results are compared with previous studies on 100-300 ppm Cr3(+) doped sapphire fibers and on commercial sapphire fibers.

  10. 100-kHz 22-fs Ti:sapphire regenerative amplification laser with programmable spectral control

    NASA Astrophysics Data System (ADS)

    Sung, Jae Hee; Lee, Hwang Woon; Nam, Chang Hee; Lee, Seong Ku

    2016-05-01

    An ultrashort, high-power Ti:sapphire laser operating at 100 kHz was developed. A regenerative amplifier with a cryogenically cooled Ti:sapphire crystal and a grism compressor were incorporated in the laser. For achieving a wide bandwidth of 78 nm, a programmable spectral control filter was applied to the regenerative amplifier to compensate for the gain narrowing effect. An output power of 1.4 GW with near Fourier-transform-limited pulse duration of 22 fs was achieved after minimizing a spectral phase error with the grism compressor, and the measured beam quality factor ( M 2) was less than 1.2. This high-quality laser will facilitate applications requiring high-repetition rate, ultrashort, high-power laser pulses.

  11. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    SciTech Connect

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 deg. C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  12. Optical waveguide formed by cubic silicon carbide on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Tang, Xiao; Wongchotigul, Kobchat; Spencer, Michael G.

    1991-01-01

    Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

  13. Reduced cost and improved figure of sapphire optical components

    NASA Astrophysics Data System (ADS)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  14. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    SciTech Connect

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  15. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-06-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  16. Description of Project Sapphire. Revision 1

    SciTech Connect

    Taylor, R.G.

    1995-06-06

    The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps.

  17. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    NASA Technical Reports Server (NTRS)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  18. Mode Orientation Control For Sapphire Dielectric Ring Resonator

    NASA Technical Reports Server (NTRS)

    Santiago, David G.; Dick, G. John; Prata, Aluizio

    1996-01-01

    Small sapphire tuning wedge used in technique for solving mode-purity problem associated with sapphire dielectric-ring resonator part of cryogenic microwave frequency discriminator. Breaks quasi-degeneracy of two modes and allows selective coupling to just one mode. Wedge mounted on axle entering resonator cavity and rotated while resonator cryogenically operating in vacuum. Furthermore, axle moved vertically to tune resonant frequency.

  19. On-Orbit Results for Canada's Sapphire Optical Payload

    NASA Astrophysics Data System (ADS)

    Scott, A.; Hackett, J.

    2013-09-01

    Sapphire is the first Space Situational Awareness (SSA) satellite mission flown by Canada's Department of National Defence (DND). On February 25, 2013 Sapphire was successfully launched into a sun synchronous orbit at ~786 km altitude. The commissioning phase was a success and the Sapphire system is entering its operational phase. Canada and the United States signed an SSA Memorandum of Understanding on May 4, 2012. Under the agreement, data from DND's Sapphire satellite will be contributed to the U.S. Space Surveillance Network (SSN), enhancing the ability of both countries to detect and avoid the collision of critical space platforms with orbital debris. The Sapphire system is now collecting SSA data that will be shared with the SSN. This SSA partnership will strengthen the long standing defence relationship between the US and Canada and provide diversity in space based sensors at a time of fiscal constraint. The Sapphire satellite optical imaging payload was designed and built by COM DEV based around a small (13.25 cm) Three Mirror Anastigmat (TMA) telescope similar in design to the Space Based Visible sensor on the US Mid-Course Space Experiment satellite. The paper provides an overview of the design and operational performance of the Sapphire instrument, comparing the actual performance to the requirements. Based on lessons learned on this program we discuss potential improvements that would be feasible in a second generation Sapphire payload including the potential for using this sensor as a hosted payload in other applications.

  20. Entropy-dominated Dissipation in Sapphire Compressed Dynamically from 14 to 87 GPa

    NASA Astrophysics Data System (ADS)

    Nellis, W. J.; Kanel, G. I.; Razorenov, S. V.; Savinykh, A. S.; Rajendran, A. M.

    2009-06-01

    States reached by dynamic compression are governed by free energy in which dissipative energy is --TS, where T is temperature and S is entropy. In a liquid like Ar effective pair interaction enegy is ˜0.01 ev. As a result Ar is relatively compressible with a shock rise time of ˜0.5 ps and 2.2 fold compression at a T of 14,000 K at 50 GPa. Thermal energy is ˜90% of shock energy. Entropy changes are small in a shocked fluid and dissipative energy appears primarily as T. We have measured wave profiles of sapphire with elastic strength of ˜15 GPa in three different crystal orientations at shock stresses of 14, 24, and 87 GPa. At 24 GPa the rise time of the plastic wave is ˜300 ns, 5 orders of magnitude greater than in liquid Ar. At 50 GPa sapphire is compressed 1.1 fold to a T of ˜500 K. Thermal pressures are negligible and bond strengths are ˜1 ev, about 2 orders of magnitude greater than in Ar. Bonds in sapphire probably break over ˜10s of ns. This long rise time causes quasi-isentropic compression with negligible shock heating. Dissipative energy goes primarily into the entropy of disordering the strong 3-D lattice, rather than into T.

  1. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    NASA Astrophysics Data System (ADS)

    Müller, André; Jensen, Ole B.; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E.; Petersen, Paul M.

    2011-12-01

    A simple and robust diode laser system emitting 1.28 W of green light suitable for pumping an ultrafast Ti:sapphire laser is presented. To classify our results, the diode laser is compared to a standard, commercially available diode pumped solid-state (DPSS) laser system pumping the same oscillator. When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti:sapphire laser is still increased by a factor > 2 due to the superior electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti:sapphire lasers to be used in applications like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy.

  2. Microstructure characterization and optical properties of sapphire after helium ion implantation

    NASA Astrophysics Data System (ADS)

    Zhong, Mian; Yang, Liang; Shen, Huahai; Liu, Wei; Xiang, Xia; Zheng, Wanguo; Guo, Decheng; Huang, Jin; Sun, Kai; Yuan, Xiaodong

    2015-06-01

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 1016, 1 × 1017and 5 × 1017 ions/cm2 at room temperature. After implantation, two broad absorption bands at 320-460 and 480-700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1-2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm2 due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  3. Synthetic fuels

    SciTech Connect

    Sammons, V.O.

    1980-01-01

    This guide is designed for those who wish to learn more about the science and technology of synthetic fuels by reviewing materials in the collections of the Library of Congress. This is not a comprehensive bibliography, it is designed to put the reader on target. Subject headings used by the Library of Congress under which books on synthetic fuels can be located are: oil-shale industry; oil-shales; shale oils; synthetic fuels; synthetic fuels industry; coal gasification; coal liquefaction; fossil fuels; hydrogen as fuel; oil sands; petroleum, synthesis gas; biomass energy; pyrolysis; and thermal oil recovery. Basic texts, handbooks, government publications, journals, etc. were included. (DP)

  4. Proton and neutron irradiation effect of Ti: Sapphires

    SciTech Connect

    Wang, G.; Zhang, J.; Yang, J.

    1999-07-01

    Various effects of proton and neutron irradiated Ti: sapphires were studied. Proton irradiation induced F, F{sup +} and V center in Ti: sapphires and 3310 cm{sup -1} infrared absorption, and made ultraviolet absorption edge shift to short wave. Neutron irradiation produced a number of F, F{sup +} and F{sub 2} centers and larger defects in Ti: sapphires, and changed Ti{sup 4+}into Ti{sup 3+} ions. Such valence state variation enhanced characteristic luminescence of Ti: sapphires, and no singular variances of intrinsic fluorescence spectra of Ti: sapphires took place with neutron flux of 1 x 10{sup 17}n/cm{sup 2}, but the fluorescence vanished with neutron flux of 1 x 10{sup 18}n/cm{sup 2} which means the threshold for the concentration of improving Ti{sup 3+} ions by neutron irradiation.

  5. Crystal Structures of Type-II Inositol Polyphosphate 5-Phosphatase INPP5B with Synthetic Inositol Polyphosphate Surrogates Reveal New Mechanistic Insights for the Inositol 5-Phosphatase Family.

    PubMed

    Mills, Stephen J; Silvander, Camilla; Cozier, Gyles; Trésaugues, Lionel; Nordlund, Pär; Potter, Barry V L

    2016-03-01

    The inositol polyphosphate 5-phosphatase INPP5B hydrolyzes the 5-phosphate group from water- and lipid-soluble signaling messengers. Two synthetic benzene and biphenyl polyphosphates (BzP/BiPhPs), simplified surrogates of inositol phosphates and phospholipid headgroups, were identified by thermodynamic studies as potent INPP5B ligands. The X-ray structure of the complex between INPP5B and biphenyl 3,3',4,4',5,5'-hexakisphosphate [BiPh(3,3',4,4',5,5')P6, IC50 5.5 μM] was determined at 2.89 Å resolution. One inhibitor pole locates in the phospholipid headgroup binding site and the second solvent-exposed ring binds to the His-Tag of another INPP5B molecule, while a molecule of inorganic phosphate is also present in the active site. Benzene 1,2,3-trisphosphate [Bz(1,2,3)P3] [one ring of BiPh(3,3',4,4',5,5')P6] inhibits INPP5B ca. 6-fold less potently. Co-crystallization with benzene 1,2,4,5-tetrakisphosphate [Bz(1,2,4,5)P4, IC50 = 6.3 μM] yielded a structure refined at 2.9 Å resolution. Conserved residues among the 5-phosphatase family mediate interactions with Bz(1,2,4,5)P4 and BiPh(3,3',4,4',5,5')P6 similar to those with the polar groups present in positions 1, 4, 5, and 6 on the inositol ring of the substrate. 5-Phosphatase specificity most likely resides in the variable zone located close to the 2- and 3-positions of the inositol ring, offering insights to inhibitor design. We propose that the inorganic phosphate present in the INPP5B-BiPh(3,3',4,4',5,5')P6 complex mimics the postcleavage substrate 5-phosphate released by INPP5B in the catalytic site, allowing elucidation of two new key features in the catalytic mechanism proposed for the family of phosphoinositide 5-phosphatases: first, the involvement of the conserved Arg-451 in the interaction with the 5-phosphate and second, identification of the water molecule that initiates 5-phosphate hydrolysis. Our model also has implications for the proposed "moving metal" mechanism. PMID:26854536

  6. Crystal Structures of Type-II Inositol Polyphosphate 5-Phosphatase INPP5B with Synthetic Inositol Polyphosphate Surrogates Reveal New Mechanistic Insights for the Inositol 5-Phosphatase Family

    PubMed Central

    2016-01-01

    The inositol polyphosphate 5-phosphatase INPP5B hydrolyzes the 5-phosphate group from water- and lipid-soluble signaling messengers. Two synthetic benzene and biphenyl polyphosphates (BzP/BiPhPs), simplified surrogates of inositol phosphates and phospholipid headgroups, were identified by thermodynamic studies as potent INPP5B ligands. The X-ray structure of the complex between INPP5B and biphenyl 3,3′,4,4′,5,5′-hexakisphosphate [BiPh(3,3′,4,4′,5,5′)P6, IC50 5.5 μM] was determined at 2.89 Å resolution. One inhibitor pole locates in the phospholipid headgroup binding site and the second solvent-exposed ring binds to the His-Tag of another INPP5B molecule, while a molecule of inorganic phosphate is also present in the active site. Benzene 1,2,3-trisphosphate [Bz(1,2,3)P3] [one ring of BiPh(3,3′,4,4′,5,5′)P6] inhibits INPP5B ca. 6-fold less potently. Co-crystallization with benzene 1,2,4,5-tetrakisphosphate [Bz(1,2,4,5)P4, IC50 = 6.3 μM] yielded a structure refined at 2.9 Å resolution. Conserved residues among the 5-phosphatase family mediate interactions with Bz(1,2,4,5)P4 and BiPh(3,3′,4,4′,5,5′)P6 similar to those with the polar groups present in positions 1, 4, 5, and 6 on the inositol ring of the substrate. 5-Phosphatase specificity most likely resides in the variable zone located close to the 2- and 3-positions of the inositol ring, offering insights to inhibitor design. We propose that the inorganic phosphate present in the INPP5B–BiPh(3,3′,4,4′,5,5′)P6 complex mimics the postcleavage substrate 5-phosphate released by INPP5B in the catalytic site, allowing elucidation of two new key features in the catalytic mechanism proposed for the family of phosphoinositide 5-phosphatases: first, the involvement of the conserved Arg-451 in the interaction with the 5-phosphate and second, identification of the water molecule that initiates 5-phosphate hydrolysis. Our model also has implications for the proposed “moving metal” mechanism

  7. Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser.

    PubMed

    Durfee, Charles G; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

    2012-06-18

    We describe a Ti:sapphire laser pumped directly with a pair of 1.2 W 445 nm laser diodes. With over 30 mW average power at 800 nm and a measured pulsewidth of 15 fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

  8. Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser

    PubMed Central

    Durfee, Charles G.; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A.; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

    2012-01-01

    We describe a Ti:sapphire laser pumped directly with a pair of 1.2W 445nm laser diodes. With over 30mW average power at 800 nm and a measured pulsewidth of 15fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

  9. Fully efficient adiabatic frequency conversion of broadband Ti:sapphire oscillator pulses.

    PubMed

    Moses, Jeffrey; Suchowski, Haim; Kärtner, Franz X

    2012-05-01

    By adiabatic difference-frequency generation in an aperiodically poled nonlinear crystal-a nonlinear optical analog of rapid adiabatic passage in a two-level atomic system-we demonstrate the conversion of a 110 nm band from an octave-spanning Ti:sapphire oscillator to the infrared, spanning 1550 to 2450 nm, with near-100% internal conversion efficiency. The experiment proves the principle of complete Landau-Zener adiabatic transfer in nonlinear optical wave mixing. Our implementation is a practical approach to the seeding of high-energy ultrabroadband optical parametric chirped pulse amplifiers. PMID:22555747

  10. Broadly tunable KNbO3 OPOs pumped by Ti:sapphire lasers

    NASA Astrophysics Data System (ADS)

    Vezin, Brigitte; Rambaldi, Patrick; Douard, M.; Rytz, Daniel; Wolf, Jean-Pierre

    1997-05-01

    We present the first broadly tunable KNbO3 OPO in tracking-free configuration (TFC), pumped by a flashlamp- pumped Ti:Sapphire laser. Tuning the pump laser from 733 to 841 nm yielded to an OPO tuning range from 908 nm to 1402 nm for the signal, and 2103 to 3803 nm for the idler. This range was limited by the mirror coatings, and continuous tuning should be achievable up to and beyond 400 nm. Threshold was as low as 15 MW/cm2 and efficiencies up to 10% have been observed without AR-coatings on the crystal.

  11. Frequency Stability of 1x10(sup -13) in a Compensated Sapphire Oscillator Operating Above 77K

    NASA Technical Reports Server (NTRS)

    Dick, G. J.; Santiago, D. G.; Wang, R. T.

    1996-01-01

    We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH(sub n11)) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package.

  12. van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst.

    PubMed

    Hwang, Jeonghyun; Kim, Moonkyung; Campbell, Dorr; Alsalman, Hussain A; Kwak, Joon Young; Shivaraman, Shriram; Woll, Arthur R; Singh, Arunima K; Hennig, Richard G; Gorantla, Sandeep; Rümmeli, Mark H; Spencer, Michael G

    2013-01-22

    van der Waals epitaxial growth of graphene on c-plane (0001) sapphire by CVD without a metal catalyst is presented. The effects of CH(4) partial pressure, growth temperature, and H(2)/CH(4) ratio were investigated and growth conditions optimized. The formation of monolayer graphene was shown by Raman spectroscopy, optical transmission, grazing incidence X-ray diffraction (GIXRD), and low voltage transmission electron microscopy (LVTEM). Electrical analysis revealed that a room temperature Hall mobility above 2000 cm(2)/V·s was achieved, and the mobility and carrier type were correlated to growth conditions. Both GIXRD and LVTEM studies confirm a dominant crystal orientation (principally graphene [10-10] || sapphire [11-20]) for about 80-90% of the material concomitant with epitaxial growth. The initial phase of the nucleation and the lateral growth from the nucleation seeds were observed using atomic force microscopy. The initial nuclei density was ~24 μm(-2), and a lateral growth rate of ~82 nm/min was determined. Density functional theory calculations reveal that the binding between graphene and sapphire is dominated by weak dispersion interactions and indicate that the epitaxial relation as observed by GIXRD is due to preferential binding of small molecules on sapphire during early stages of graphene formation. PMID:23244231

  13. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (11 ̅20) sapphire.

    PubMed

    Oleson, Timothy A; Sahai, Nita; Wesolowski, David J; Dura, Joseph A; Majkrzak, Charles F; Giuffre, Anthony J

    2012-03-15

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetic membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacked SPBs retain properties (e.g., fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined the role of oxide surface charge (by varying pH and ionic strength) and of divalent Ca(2+) in controlling surface coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (11 ̅20) face of sapphire (α-Al(2)O(3)). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (I=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I≥210 mM, or with addition of 2mM Ca(2+). The latter two effects are not additive, suggesting that Ca(2+) mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on α-Al(2)O(3) particles determined by adsorption isotherms and on single-crystal (10 ̅10) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques. PMID:22244865

  14. Adsorption and desorption studies of cesium on sapphire surfaces

    SciTech Connect

    Zavadil, K.R.; Ing, J.L.

    1993-12-01

    Adsorption/desorption were studied using combined surface analytical techniques. An approximate initial sticking coefficient for Cs on sapphire was measured using reflection mass spectrometry and found to be 0.9. Thermal Desorption Mass Spectrometry (TDMS) and Auger Electron Spectroscopy (AES) were used to verify that a significant decrease in sticking coefficient occurs as the Cs coverage reaches a critical submonolayer value. TDMS analysis demonstrates that Cs is stabilized on a clean sapphire surface at temperatures (1200 K) in excess of the temperatures experienced by sapphire in a TOPAZ-2 thermionic fuel element (TFE). Surface contaminants on sapphire can enhance Cs adsorption relative to the clean surface. C contamination eliminates the high temperature state of Cs desorption found on clean sapphire but shifts the bulk of the C desorption from 400 to 620 K. Surface C is a difficult contaminant to remove from sapphire, requiring annealing above 1400 K. Whether Cs is stabilized on sapphire in a TFE environment will most likely depend on relation between surface contamination and surface structure.

  15. Electron Beam Welder Used to Braze Sapphire to Platinum

    NASA Technical Reports Server (NTRS)

    Forsgren, Roger C.; Vannuyen, Thomas

    1998-01-01

    A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.

  16. Ruby and sapphire from Jegdalek, Afghanistan

    USGS Publications Warehouse

    Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

    2000-01-01

    This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

  17. Fe-sapphire and C-Fe-sapphire interactions and their effect on the growth of single-walled carbon nanotubes by chemical vapor deposition.

    PubMed

    Yudasaka, M; Kasuya, Y; Jing, F; Zhang, M; Iijima, S

    2004-04-01

    We previously reported that the quantity of single-walled carbon nanotubes grown on Fe-coated sapphire by chemical vapor deposition depended on the crystallographic faces of sapphires. In this report, we show that the interaction of Fe, sapphire, and carbon depended on the sapphire faces. We deduce that the quantity of Fe available to catalyze the growth of single-walled carbon nanotubes was suppressed by the formation of Fe-Al alloys and whether the Fe-Al alloys were formed on Fe-coated sapphire or not depended on the sapphire-surface structure. PMID:15296233

  18. Spectroscopic Analysis Of Insulating Crystal Fibers

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Inge, Addison T.; Byvik, C. E.

    1990-01-01

    New method provides rapid characterization of optical properties. Technique for determining optical properties of insulating single-crystal fibers developed and applied to sapphire, spinel, and YAIO crystalline host fibers doped with triply ionized titanium. Crystal fibers grown more rapidly and less expensively.

  19. Efficient continuous-wave lasing operation of Nd:KGd(WO(4))(2) at 1.067 microm with diode and Ti:sapphire laser pumping.

    PubMed

    Esmeria, J M; Ishii, H; Sato, M; Ito, H

    1995-07-15

    We describe the efficient operation of a Nd:KGd(WO(4))(2) laser at 1.067 microm pumped by Ti:sapphire and diode lasers. Preliminary data indicate a relatively low threshold and high efficiency for a 10 mm diameter x 10 mm long antireflection-coated crystal. The wide high-absorption band was centered near 810 nm. The fluorescence lifetime was 109 micros, and the stimulated-emission cross section was approximately 3.5 x 10(-19) cm(2). Slope efficiencies of 43% and 44% were attained for diode laser and Ti:sapphire pump sources, respectively. PMID:19862075

  20. Synthetic oils

    NASA Technical Reports Server (NTRS)

    Hatton, R. E.

    1973-01-01

    Synthetic lubricants are discussed by chemical class and their general strengths and weaknesses in terms of lubrication properties are analyzed. Comparative ratings are given for 14 chemical classes and are used as a guide for lubricant selection. The effects of chemical structure on the properties of the lubricant are described with special emphasis on thermal stability. The diversity of synthetic lubricants which is provided by the wide range of properties permits many applications, some of which are reported.

  1. A modified pump laser system to pump the titanium sapphire laser

    NASA Technical Reports Server (NTRS)

    Petway, Larry B.

    1990-01-01

    As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

  2. Laser damage resistant anti-reflection microstructures in Raytheon ceramic YAG, sapphire, ALON, and quartz

    NASA Astrophysics Data System (ADS)

    Hobbs, Douglas S.; MacLeod, Bruce D.; Sabatino, Ernest, III; Hartnett, Thomas M.; Gentilman, Richard L.

    2011-06-01

    A study of the laser induced damage threshold (LiDT) of anti-reflection (AR) microstructures (ARMs) built in the end facets of metal ion doped yttrium aluminum garnet (YAG) laser gain material, has been conducted. Test samples of undoped and ytterbium-doped polycrystalline YAG produced by Raytheon Company were processed with ARMs in one surface and subjected to standardized pulsed LiDT testing at the near-infrared (NIR) wavelength of 1064nm. As received YAG samples with a simple commercial polish were also submitted to the damage tests for comparison, along with YAG samples that were treated with a single layer thin-film AR coating designed for maximum transmission at 1064nm. Additional samples of single crystal sapphire and quartz, and polycrystalline ALONTM windows were prepared with thin-film AR coatings and ARMs textures to expand the 1064nm laser damage testing to other important NIR transmitting materials. It was found that the pulsed laser damage resistance of ARMs textured ceramic YAG windows is 11 J/cm2, a value that is 43% higher than untreated ceramic YAG windows, suggesting that ARMs fabrication removed residual sub-surface damage, a factor that has been shown to be important for increasing the damage resistance of an optic. This conclusion is also supported by the high damage threshold values found with the single layer AR coatings on ceramic YAG where the coatings may have shielded the sub-surface polishing damage. Testing results for the highly polished sapphire windows also support the notion that better surface preparation produces higher damage resistance. The damage threshold for untreated sapphire windows exceeded 32 J/cm2 for one sample with an average of 27.5 J/cm2 for the two samples tested. The ARMs-treated sapphire windows had similar damage thresholds as the untreated material, averaging 24.9 J/cm2, a value 1.5 to 2 times higher than the damage threshold of the thin film AR coated sapphire windows.

  3. Temperature Compensated Sapphire Resonator for Ultra-Stable Oscillator Capability

    NASA Technical Reports Server (NTRS)

    Dick, G. J.; Santiago, D. G.; Wang, R. T.

    1994-01-01

    We report on the design and test of a whispering gallery sapphire resonator for which the dominant microwave mode family shows frequency-stable, compensated operation for temperatures above 77 kelvin.

  4. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  5. Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Tendille, Florian; Hugues, Maxime; Vennéguès, Philippe; Teisseire, Monique; De Mierry, Philippe

    2015-06-01

    Thanks to the use of two successive selective growths by metal organic chemical vapor deposition reactor, high quality semipolar (11-22) GaN with a homogenous defect repartition over the surface was achieved. The procedure starts with a first selective growth on a patterned sapphire substrate, leading to continuous stripes of three dimensional (3D) GaN crystals of low defect density. Then, a second selective growth step is achieved by depositing a SiNx nano-mask and a low temperature GaN nano-layer on the top of the GaN stripes. Hereby, we demonstrate an original way to obtain a homoepitaxial selective growth on 3D GaN crystals by taking advantage of the different crystallographic planes available. Basal stacking faults (BSFs) are generated during this second selective growth but could be eliminated by using a three-step growth method in which elongated voids are created above the defective area. For a fully coalesced sample grown using the 2 step method, dislocation density of 1.2 × 108 cm-2 and BSFs density of 154 cm-1 with a homogenous distribution have been measured by cathodoluminescence at 80 K. Consequently the material quality of this coalesced semipolar layer is comparable to the one of polar GaN on c-plane sapphire.

  6. Tilt growth of CdTe epilayers on sapphire substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Ebe, H.; Sawada, A.; Maruyama, K.; Nishijima, Y.; Shinohara, K.; Takigawa, H.

    1991-12-01

    We studied model lattice matching in the growth direction by tilt growth and found that the ratio of the tilt angle of the epilayer (α) to the offset angle of the substrate (θ) had a maximum at α / θ = 0.73, independent of the offset angle. Experimental plots of the ratio versus the full width at half maximum (FWHM) of (333) CdTe rocking curves in double-crystal X-ray diffraction show that the ratio ranges from 0.05 to 0.6 while the FWHM varies from 1100 to 400 arc sec. This result suggests that the lattice inclination orients the lattice structure perpendicular to the CdTe-sapphire heterointerface and that the tilt angle reduces defects such as dislocations and stacking faults. Most epilayers grown on sapphire substrates with offset angles above 3° were confirmed to have a α / θ ratio below 0.2. This suggests that crystal defects may be generated by shearing stress due to large offset angles. Greater defect density lowers the ratio and degrades crystallinity.

  7. Development and Characterization of a Hybrid TITANIUM:SAPPHIRE/NEODYMIUM:GLASS Multiterawatt Laser System

    NASA Astrophysics Data System (ADS)

    Chien, Chingyuan

    The broad bandwidth of Ti:sapphire, and the high energy storage/extraction capability of Nd:glass have made it possible to develop a hybrid Ti:sapphire/Nd:glass chirped -pulse-amplification (CPA) laser system. This 400-fs laser system generates pulses with a contrast ratio of 10 ^6:1, and is capable of producing a focused intensity in excess of 10^{19} W/cm^2. The plasma produced by the interaction of an intense 400-fs laser pulse with an Al solid target is studied using a time-integrated x-ray spectrometer. The temporal behavior of the keV x-ray pulse emitted from the laser-produced plasma is studied with an x-ray streak camera (with 2 ps time resolution). The characteristic of the x-ray emission strongly depends on the contrast of the laser pulse. Second harmonic generation of a 1 mu m, 400-fs laser pulses is investigated for Type I and Type II conversion schemes with a KDP crystal. High conversion efficiencies (up to 80%) are obtained in the intensity range from 100-400 GW/cm^2, with no obvious damage to the crystal. In the Type II predelay scheme, a pulse shortening effect is observed and the shortest measured pulse duration is 180 fs. The experimental results generally agree with the simulations of the code MIXER.

  8. Kinetic process of nitridation on the α-sapphire surface

    NASA Astrophysics Data System (ADS)

    Xingzhou, Tang; Shuping, Li; Junyong, Kang; Jiaqi, Chen

    2014-11-01

    We established a model to simulate the growth process of nitridation and clarified the inner mechanisms of nitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on α-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the α-sapphire surface are found by our simulation.

  9. Progress on 10 Kelvin cryo-cooled sapphire oscillator

    NASA Technical Reports Server (NTRS)

    Wang, Rabi T.; Dick, G. John; Diener, William A.

    2004-01-01

    We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).

  10. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    NASA Astrophysics Data System (ADS)

    Karacheban, O.; Afanaciev, K.; Hempel, M.; Henschel, H.; Lange, W.; Leonard, J. L.; Levy, I.; Lohmann, W.; Schuwalow, S.

    2015-08-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond sensors are widely used. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm2 size and 525 μ m thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency measured as a function of the bias voltage rises with the voltage, reaching about 10% at 095 V. The signal size obtained from electrons crossing the stack at this voltage is about 02200 e, where e is the unit charge. The signal size is measured as a function of the hit position, showing variations of up to 20% in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarisation field was observed.

  11. Development of high-power, 6 kHz, single-mode Ti:sapphire laser at 904 nm for generating 193 nm light

    NASA Astrophysics Data System (ADS)

    Tsuboi, Mizuki; Nakazato, Tomoharu; Onose, Takashi; Tanaka, Yuichi; Sarukura, Nobuhiko; Kakizaki, Kouji; Watanabe, Shuntaro

    2015-04-01

    A high power, 6 kHz, single-mode Ti:sapphire laser operating at 904 nm has been developed to produce a 193 nm light source. The output power was above 10 W with a bandwidth of 160 MHz. The Hänsch-Couillaud locking scheme was successfully applied to stabilize the frequency of the pulse laser. The thermal lens in the Ti:sapphire crystal having a focal length down to 10 mm along with strong astigmatism was compensated by distributing thermal load to three amplifiers with an even number of passes, resulting in a nearly diffraction limited beam. This Ti:sapphire laser contributed to the generation of 193 nm light with an output power above 200 mW.

  12. Enhanced photoluminescence from Cr3+ centers in α-sapphire coated with LiNbO3(:Fe) and LiTaO3 films

    NASA Astrophysics Data System (ADS)

    Yang, X.; Wu, X. L.; Siu, G. G.; Kong, F.; Qiu, T.

    2004-12-01

    A LiNbO3(:Fe) or LiTaO3 film is sandwiched between a (012)-oriented α-sapphire wafer and an amorphous Al2O3 or SiO2 film using pulsed laser deposition. After annealing at 1000 °C in O2, the film becomes a c-oriented single-domain ferroelectric. This sandwich structure shows an enhanced photoluminescence from trace amounts of Cr3+ centers in the host α-sapphire (R-line emission at 691 nm). Spectral analyses suggest that both strong space-charge and photorefractive effects of the LiNbO3(:Fe) or LiTaO3 film cause a change in the crystal field of the host α-sapphire, which increases the transition probability of Cr3+ and thus leads to an enhancement of the R-line intensity. The result has prospective applications in laser and optical integrated devices.

  13. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    NASA Astrophysics Data System (ADS)

    Sastry, M. D.; Mane, Sandesh N.; Gaonkar, Mahesh P.; Bagla, H.; Panjikar, J.; Ramachandran, K. T.

    2009-07-01

    Corundum α - Al2O3 single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr3+ in ruby, Fe3+ in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  14. Synthetic shibkovite K(K{sub 1.67}H{sub 2}O{sub 0.33})(Ca{sub 1.3}Na{sub 0.7})[Zn{sub 3}Si{sub 12}O{sub 30}]: the crystal structure and comparative crystal chemistry

    SciTech Connect

    Kiriukhina, G. V. Yakubovich, O. V.; Dimitrova, O. V.

    2015-01-15

    The structure of a single crystal of a synthetic analog of mineral shibkovite K(K{sub 1.67}H{sub 2}O{sub 0.33})(Ca{sub 1.3}Na{sub 0.7})[Zn{sub 3}Si{sub 12}O{sub 30}] (milarite structure type) obtained by hydrothermal synthesis in the AlPO{sub 4}-K{sub 3}PO{sub 4}-CaCO{sub 3}-Na{sub 2}CO{sub 3}-ZnCO{sub 3}-SiO{sub 2}-H{sub 2}O system has been solved (R = 0.0406) by X-ray diffraction analysis: a = 10.5327(2) Å, c = 14.2019(3) Å, sp. gr. P6/mcc, Z = 2, and ρ{sub calcd} = 2.90 g/cm{sup 3}. The crystal-chemical features of the new phase are studied in comparison with the other terms of the milarite group. It is shown that the crystallization conditions for minerals and synthetic analogs of this group determine the presence or absence of crystallization water in the structures of compounds.

  15. Synthetic environments

    NASA Astrophysics Data System (ADS)

    Lukes, George E.; Cain, Joel M.

    1996-02-01

    The Advanced Distributed Simulation (ADS) Synthetic Environments Program seeks to create robust virtual worlds from operational terrain and environmental data sources of sufficient fidelity and currency to interact with the real world. While some applications can be met by direct exploitation of standard digital terrain data, more demanding applications -- particularly those support operations 'close to the ground' -- are well-served by emerging capabilities for 'value-adding' by the user working with controlled imagery. For users to rigorously refine and exploit controlled imagery within functionally different workstations they must have a shared framework to allow interoperability within and between these environments in terms of passing image and object coordinates and other information using a variety of validated sensor models. The Synthetic Environments Program is now being expanded to address rapid construction of virtual worlds with research initiatives in digital mapping, softcopy workstations, and cartographic image understanding. The Synthetic Environments Program is also participating in a joint initiative for a sensor model applications programer's interface (API) to ensure that a common controlled imagery exploitation framework is available to all researchers, developers and users. This presentation provides an introduction to ADS and the associated requirements for synthetic environments to support synthetic theaters of war. It provides a technical rationale for exploring applications of image understanding technology to automated cartography in support of ADS and related programs benefitting from automated analysis of mapping, earth resources and reconnaissance imagery. And it provides an overview and status of the joint initiative for a sensor model API.

  16. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  17. Compact Ti:Sapphire laser with its Third Harmonic Generation (THG) for an airborne ozone Differential Absorption Lidar (DIAL) transmitter

    NASA Astrophysics Data System (ADS)

    Chen, Songsheng; Storm, Mark E.; Marsh, Waverly D.; Petway, Larry B.; Edwards, William C.; Barnes, James C.

    2001-02-01

    A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonics at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After experimentally compared with Beta-Barium Borate (b-BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5'5'20 mm3) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900nm and its third harmonics at 300nm. The desired high ultraviolet (UV) output pulse energy is more than 30mJ at 300nm and the energy conversion efficiency from 900nm to 300nm is 30%.

  18. Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

    NASA Astrophysics Data System (ADS)

    Boćkowski, M.; Grzegory, I.; Krukowski, S.; Łucznik, B.; Wróblewski, M.; Kamler, G.; Borysiuk, J.; Kwiatkowski, P.; Jasik, K.; Porowski, S.

    2005-01-01

    In this paper the results of directional high-pressure growth of GaN on sapphire/GaN MOCVD templates are described. The use of a baffle plate is presented, in order to obtain the flat crystallization front at the substrate. The GaN growth rate as a function of the applied temperature gradient and time is analyzed in detail. The optimal temperature gradient for the fastest growth is determined. The changes of the growth rate with time are explained. The defect selective etching method and transmission electron microscopy are used to determine the dislocation density in the deposited GaN material. All results are compared to those obtained for directional growth of GaN on pressure grown GaN crystals (platelets).

  19. Analysis of limits for sapphire growth in a micro-pulling-down system

    NASA Astrophysics Data System (ADS)

    Samanta, Gaurab; Yeckel, Andrew; Daggolu, Parthiv; Fang, Haisheng; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2011-11-01

    A two-dimensional, quasi-steady-state, thermal-capillary model is developed for a micro-pulling-down (μ-PD) system to study limitations to steady growth of sapphire. The model incorporates mass, energy, and momentum conservation equations, and also accounts for the physics of the melt meniscus, the solidification front, and the crystal radius. Limit points with respect to pull rate are found under higher-gradient thermal conditions but are shown to unfold with changes in die heating and ambient temperature. Limit points related to crystal size and capillary effects are also found with respect to static head (melt height); however, classical criteria of capillary instability are shown to be invalid. Thus, a more fundamental understanding is obtained for μ-PD operating limits, their origins, and their possible avoidance.

  20. Synthetic Jets

    NASA Technical Reports Server (NTRS)

    Milanovic, Ivana M.

    2003-01-01

    Current investigation of synthetic jets and synthetic jets in cross-flow examined the effects of orifice geometry and dimensions, momentum-flux ratio, cluster of orifices, pitch and yaw angles as well as streamwise development of the flow field. This comprehensive study provided much needed experimental information related to the various control strategies. The results of the current investigation on isolated and clustered synthetic jets with and without cross-flow will be further analyzed and documented in detail. Presentations at national conferences and publication of peer- reviewed journal articles are also expected. Projected publications will present both the mean and turbulent properties of the flow field, comparisons made with the data available in an open literature, as well as recommendations for the future work.

  1. Cryogenic Pound Circuits for Cryogenic Sapphire Oscillators

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Wang, Rabi

    2006-01-01

    Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

  2. Precision measurement of a low-loss cylindrical dumbbell-shaped sapphire mechanical oscillator using radiation pressure

    NASA Astrophysics Data System (ADS)

    Bourhill, J.; Ivanov, E.; Tobar, M. E.

    2015-08-01

    We present first results from a number of experiments conducted on a 0.53-kg cylindrical dumbbell-shaped sapphire crystal. Here we report on an optomechanical experiment utilizing a modification to the typical cylindrical architecture. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects result in parametric frequency modulation of resonant microwave whispering gallery modes that are simultaneously excited within the crystal. A microwave readout system is implemented, allowing extremely low noise measurements of this frequency modulation near our modes of interest, having a phase noise floor of -165 dBc/Hz at 100 kHz. Fine tuning of the crystal's suspension has allowed for the optimization of mechanical quality factors in preparation for cryogenic experiments, with a value of Q =8 ×107 achieved at 127 kHz. This results in a Q ×f product of 1013, equivalent to the best measured values in a macroscopic sapphire mechanical system. Results are presented that demonstrate the excitation of mechanical modes via radiation pressure force, allowing an experimental method of determining the transducer's displacement sensitivity d f /d x and calibrating the system. Finally, we demonstrate parametric backaction phenomenon within the system. These are all important steps towards the goal of achieving quantum limited measurements of a kilogram-scale macroscopic device for the purpose of detecting deviations from standard quantum theory resulting from quantum gravitational effects.

  3. Surface Structure of Protonated R-Sapphire (1$\\bar{1}$02) Studied by Sum-Frequency Vibrational Spectroscopy

    SciTech Connect

    Sung, Jaeho; Zhang, Luning; Tian, Chuanshan; Waychunas, Glenn A.; Shen, Y. Ron

    2011-03-23

    Sum frequency vibrational spectroscopy was used to study the protonated R-plane (1$\\bar{1}$02 ) sapphire surface. The OH stretch vibrational spectra show that the surface is terminated with three hydroxyl moieties, two from AlOH2 and one from Al2OH functional groups. The observed polarization dependence allows determination of the orientations of the three OH species. The results suggest that the protonated sapphire (1$\\bar{1}$02 ) surface differs from an ideal stoichimetric termination in a manner consistent with previous X-ray surface diffraction (crystal truncation rod) studies. However, in order to best explain the observed hydrogenbonding arrangement, surface oxygen spacing determined from the X-ray diffraction study requires modification.

  4. Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique

    NASA Astrophysics Data System (ADS)

    Yamada, Takumi; Imanishi, Masayuki; Nakamura, Kosuke; Murakami, Kosuke; Imabayashi, Hiroki; Matsuo, Daisuke; Honjo, Masatomo; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2016-07-01

    GaN wafers are generally fabricated by separating a foreign substrate from a GaN layer using thermal stress; however, thermal stress also leads to the cracking of the GaN layer. In this study, we first succeeded in dissolving a sapphire substrate just after Na-flux growth by successively changing the flux content for GaN growth (Ga–Na–C) to that for dissolving sapphire (Ga–Na–C–Li) at the considered growth temperature. Hence, no thermal stress was induced in the grown GaN crystals, resulting in a crack-free GaN substrate. We concluded that this process is a good candidate technique for supplying free-standing GaN substrates.

  5. Response to Comment on '#28;Twin Symmetry Texture of Energetically Condensed 2 Niobium Thin Films on Sapphire Substrate' #29; [J. Appl. Phys. 110, 033523(2011)

    SciTech Connect

    Xin Zhao, Charles Reece, Phillips Larry, Mahadevan Krishnan, Kang Seo

    2012-07-01

    Welander commented that in our article [J. Appl. Phys. 110, 033523(2011)] , Zhao et al claim to have found a new three-dimensional (3D) relationship for niobium-on-sapphire epitaxy”. Welander might have misunderstood the purpose of our article, which was to show that energetic condensation of Nb on sapphire drives crystal growth that is quite distinct from the type of epitaxy encountered in lower energy deposition. Welander is correct about the misidentified crystal-directions in the top-view sapphire lattice (Fig.4[ref.1]). He is also correct about the misorientation of the pole figures in Fig4[ref.1]. In Fig.1 of this response, we have corrected these errors. Perhaps because of these errors, Welander misconstrued our discussion of the Nb crystal growth as claiming a new 3D registry. That was not our intention. Rather, we wished to highlight the role of energetic condensation that drives low-defect crystal growth by a combination of non-equilibrium sub-plantation that disturbs the substrate lattice and thermal annealing that annihilates defects and promotes large-grain crystal growth.

  6. Synthetic Astrobiology

    NASA Technical Reports Server (NTRS)

    Rothschild, Lynn J.

    2016-01-01

    Synthetic biology - the design and construction of new biological parts and systems and the redesign of existing ones for useful purposes - has the potential to transform fields from pharmaceuticals to fuels. Our lab has focused on the potential of synthetic biology to revolutionize all three major parts of astrobiology: Where do we come from? Where are we going? and Are we alone? For the first and third, synthetic biology is allowing us to answer whether the evolutionary narrative that has played out on planet earth is likely to have been unique or universal. For example, in our lab we are re-evolving the biosynthetic pathways of amino acids in order to understand potential capabilities of an early organism with a limited repertoire of amino acids and developing techniques for the recovery of metals from spent electronics on other planetary bodies. And what about the limits for life? Can we create organisms that expand the envelope for life? In the future synthetic biology will play an increasing role in human activities both on earth, in fields as diverse as human health and the industrial production of novel bio-composites. Beyond earth, we will rely increasingly on biologically-provided life support, as we have throughout our evolutionary history. In order to do this, the field will build on two of the great contributions of astrobiology: studies of the origin of life and life in extreme environments.

  7. Synthetic Astrobiology

    NASA Technical Reports Server (NTRS)

    Rothschild, Lynn J.

    2015-01-01

    Synthetic biology - the design and construction of new biological parts and systems and the redesign of existing ones for useful purposes - has the potential to transform fields from pharmaceuticals to fuels. Our lab has focused on the potential of synthetic biology to revolutionize all three major parts of astrobiology: Where do we come from? Where are we going? and Are we alone? For the first and third, synthetic biology is allowing us to answer whether the evolutionary narrative that has played out on planet earth is likely to have been unique or universal. For example, in our lab we are re-evolving the biosynthetic pathways of amino acids in order to understand potential capabilities of an early organism with a limited repertoire of amino acids and developing techniques for the recovery of metals from spent electronics on other planetary bodies. In the future synthetic biology will play an increasing role in human activities both on earth, in fields as diverse as human health and the industrial production of novel bio-composites. Beyond earth, we will rely increasingly on biologically-provided life support, as we have throughout our evolutionary history. In order to do this, the field will build on two of the great contributions of astrobiology: studies of the origin of life and life in extreme environments.

  8. Effect of nonstoichiometry on the magnetic and electrical properties of synthetic single crystal Fe(2.4)Ti(0.6)O4

    NASA Astrophysics Data System (ADS)

    Wanamaker, B. J.; Moskowitz, Bruce M.

    1994-06-01

    A single crystal of titanomagnetite Fe(2.4)Ti(0.6)O4 (TM60) was synthesized using the floating zone technique. The Curie temperature, saturation magnetization at 5 K, and thermopower were measured for several pieces of the crystal as grown and following high temperature annealing at different oxygen fugacities within the stability field of the TM60. The magnetic and electrical data indicate the long-range ordering in TM60 is a function of nonstoichiometry with higher cation vacancy concentrations producing a more random cation distribution. This effect may explain the differences among cation distribution models for TM developed previously by other workers.

  9. Gain-switched Ti:sapphire laser-based photoacoustic imaging.

    PubMed

    Lee, Jisu; Lee, Yong-Jae; Jeong, Eun Ju; Jung, Moon Youn; Lee, Susung; Kim, Bong Kyu; Song, Dong Hoon

    2016-07-10

    We demonstrate photoacoustic (PA) imaging using a compact gain-switched Ti:sapphire laser. Additionally, a simple laser configuration is provided. The Ti:sapphire laser is pumped using a frequency-doubled pulsed neodymium-doped yttrium aluminum garnet pulse laser operating at a repetition rate of 10 Hz, with a pump energy of 37 mJ. No water cooling is required for the Ti:sapphire crystal. The output pulse energy and pulse duration of the laser are 13.6 mJ and 11 ns, respectively. Thus, the power conversion efficiency is 36.7%. As the end mirror in a laser cavity is adjusted in a horizontal direction, the output wavelength can be tuned within a range of 725-880 nm with a spectral bandwidth of approximately 1 nm. The laser has a small footprint size of 50 cm×35 cm including even laser pumping. Because the near-infrared region has significant advantages in the context of absorption and scattering in biological tissues, our laser can be used for PA imaging. Apart from obtaining PA images of a tube filled with indocyanine green immersed in water and placed under chicken breast tissue, our laser system could also be used for the simultaneous PA and ultrasound (US) dual-modality imaging of blood vessels lying beneath the skin of a human middle finger. We used a commercially available US machine for the PA and US dual-modality imaging. PMID:27409320

  10. Transferred large area single crystal MoS2 field effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Choong Hee; McCulloch, William; Lee, Edwin W.; Ma, Lu; Krishnamoorthy, Sriram; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

    2015-11-01

    Transfer of epitaxial, two-dimensional (2D) MoS2 on sapphire grown via synthetic approaches is a prerequisite for practical device applications. We report centimeter-scale, single crystal, synthesized MoS2 field effect transistors (FETs) transferred onto SiO2/Si substrates, with a field-effect mobility of 4.5 cm2 V-1 s-1, which is among the highest mobility values reported for the transferred large-area MoS2 transistors. We demonstrate simple and clean transfer of large-area MoS2 films using deionized water, which can effectively avoid chemical contamination. The transfer method reported here allows standard i-line stepper lithography process to realize multiple devices over the entire film area.

  11. Scaling STI's sapphire cryocooler for applications requiring higher heat loads

    NASA Astrophysics Data System (ADS)

    Karandikar, Abhijit; Fiedler, Andreas

    2012-06-01

    Superconductor Technologies Inc. (STI) developed the Sapphire cryocooler specifically for the SuperLink® product; a high performance superconducting Radio Frequency (RF) front-end receiver used by wireless carriers such as Verizon Wireless and AT&T to improve network cell coverage and data speeds. STI has built and deployed over 6,000 systems operating 24 hours a day (24/7), 7 days a week in the field since 1999. Sapphire is an integrated free piston Stirling cycle cryocooler with a cooling capacity of 5 Watts at 77 Kelvin (K) with less than 100 Watts (W) input power. It has a field-proven Mean Time Between Failure (MTBF) of well over 1 million hours, requires zero maintenance and has logged over 250 million cumulative runtime hours. The Sapphire cooler is built on a scalable technology platform, enabling the design of machines with cooling capacities greater than 1 kilowatt (kW). This scalable platform also extends the same outstanding attributes as the Sapphire cooler, namely high reliability, zero maintenance, and compact size - all at a competitive cost. This paper will discuss emerging applications requiring higher heat loads and these attributes, describe Sapphire, and show a preliminary concept of a scaled machine with a 100 W cooling capacity.

  12. Synthetic chromosomes.

    PubMed

    Schindler, Daniel; Waldminghaus, Torsten

    2015-11-01

    What a living organism looks like and how it works and what are its components-all this is encoded on DNA, the genetic blueprint. Consequently, the way to change an organism is to change its genetic information. Since the first pieces of recombinant DNA have been used to transform cells in the 1970s, this approach has been enormously extended. Bigger and bigger parts of the genetic information have been exchanged or added over the years. Now we are at a point where the construction of entire chromosomes becomes a reachable goal and first examples appear. This development leads to fundamental new questions, for example, about what is possible and desirable to build or what construction rules one needs to follow when building synthetic chromosomes. Here we review the recent progress in the field, discuss current challenges and speculate on the appearance of future synthetic chromosomes. PMID:26111960

  13. Polarizance of a synthetic mica crystal polarizer and the degree of linear polarization of an undulator beamline at 880 eV evaluated by the rotating-analyzer method

    SciTech Connect

    Imazono, Takashi; Hirono, Toko; Kimura, Hiroaki; Saitoh, Yuji; Ishino, Masahiko; Muramatsu, Yasuji; Koike, Masato; Sano, Kazuo

    2005-12-15

    The polarization performance of a reflection-type polarizer made with a synthetic mica (fluorophlogopite) single crystal (002) in symmetric Bragg geometry was evaluated at the photon energy of 880 eV by means of the rotating-analyzer method. An experiment was performed at the undulator beamline at the SPring-8. The reflectance in the s-polarization configuration was 2.6% at an incidence angle of around 45 deg. As the result of the analysis based on the rotating-analyzer method, the polarizance of the polarizer and the degree of linear polarization of the incident light at 880 eV were found to be 0.997{+-}0.002 and 0.993{+-}0.004, respectively.

  14. Lattice-resolution imaging of the sapphire (0 0 0 1) surface in air by AFM

    NASA Astrophysics Data System (ADS)

    Gan, Yang; Wanless, Erica J.; Franks, George V.

    2007-02-01

    Lattice-resolution images of single-crystal α-alumina (sapphire) (0 0 0 1) surfaces have been obtained using contact-mode AFM under ambient conditions. It was found that the hexagonal surface lattice has a periodicity of 0.47 ± 0.11 nm, which is identical to that reported previously when the same surface was imaged in water. Large lattice corrugations (as high as 1 nm) were observed, but were concluded to be imaging artifacts because of the strong friction which causes additional deflection of the cantilever. The additional deflection of the cantilever is registered by the detector of the optical beam-deflection AFM resulting in an overestimation of the height at each lattice point. Abrupt changes were also resolved in the topography including honeycomb patterns and a transition from 2D lattices to 1D parallel stripes, with scanning direction. These phenomena can be explained by the commensurate sliding between the tip and sapphire surface due to the strong contact force.

  15. DPSSL pumped 20-TW Ti:sapphire laser system for DD fusion experiment

    NASA Astrophysics Data System (ADS)

    Sekine, T.; Hatano, Y.; Takeuchi, Y.; Kawashima, T.

    2016-03-01

    A diode-pumped solid-state laser (DPSSL) pumped 20-TW output Ti:sapphire laser system has been developed. A diode-pumped Nd:glass laser with output energy of 12.7 J in 527 nm was used as a pump source for a 20-TW Ti:sapphire amplifier. A CeLiB6O10 nonlinear optical crystal was used as a frequency doubler of the Nd:glass DPSSL[1]. Figure 1 shows typical output pulse energy of the 20-TW amplifier as a function of pumping energy and a near field pattern. A 1.65 J pulse energy was obtained by 4.5 J pump energy. The amplified seed pulse is compressed to typically 60 fs as shown in Fig. 1 by a vacuumed pulse compressor with 80% of transmissivity. Encircled energy ratio, into a circled with 8 μm diameter area, of far field pattern focused by off-axis parabolic mirror with F# of 3 is numerically evaluated to 40% at TW class output condition. Then focal intensity would reach to 1018W/cm2. This all- DPSSL system contributes for stable and continual investigation of laser induced plasma experiment. We have succeeded continual and high efficient generation of DD fusion neutron from CD nano-particles by cluster fusion scheme using the 20-TW laser. A yield of ∼105 neutrons per shot was stably observed during continuous 100 shots with repetition rate of 0.1Hz.

  16. Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

    NASA Astrophysics Data System (ADS)

    Stoker, D. S.; Baek, J.; Wang, W.; Kovar, D.; Becker, M. F.; Keto, J. W.

    2006-05-01

    We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG ( z -scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN -sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χxxxx(3)(3ω;ω,ω,ω)=1.52±0.25×10-13esu . The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects.

  17. Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

    NASA Astrophysics Data System (ADS)

    Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

    2012-02-01

    High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

  18. Stress dependence of F+-center cathodoluminescence of sapphire

    NASA Astrophysics Data System (ADS)

    Pezzotti, Giuseppe; Wan, Keshu; Munisso, Maria Chiara; Zhu, Wenliang

    2006-07-01

    The rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (α-Al2O3) as Π =1.18±0.03nm/GPa. The PS dependence could be determined to a degree of precision by applying a controlled biaxial stress field to a sapphire thin plate using a ball-on-ring biaxial bending jig and by measuring in situ the spectral shift of the emitted cathodoluminescence (CL) F+ band in a field-emission-gun scanning electron microscope. The ball-on-ring PS calibration results open the possibility of applying CL/PS assessments to directly determine unknown residual stress fields in sapphire-based devices using the optical activity of its oxygen vacancies.

  19. Measurement and analysis of cryogenic sapphire dielectric resonators and DROs

    NASA Technical Reports Server (NTRS)

    Dick, G. J.

    1987-01-01

    Presented are the experimental and computational results of a study on a new kind of dielectric resonator oscillator (DRO). It consists of a cooled, cylindrically symmetric sapphire resonator surrounded by a metallic shield and is capable of higher Q's than any other dielectric resonator. Isolation of fields to the sapphire by the special nature of the electromagnetic mode allows the very low loss of the sapphire itself to be expressed. Calculations show that the plethora of modes in such resonators can be effectively reduced through the use of a ring resonator with appropriate dimensions. Experimental results show Q's ranging from 3 x 10 to the 8th at 77 K to 10 to the 9th at 4.2 K. Performance is estimated for several types of DROs incorporating these resonators. Phase noise reductions in X-band sources are indicated at values substantially lower than those previously available.

  20. Noncollinear parametric generation in LiIO(3) and beta-barium borate by frequency-doubled femtosecond Ti:sapphire laser pulses.

    PubMed

    Krylov, V; Kalintsev, A; Rebane, A; Erni, D; Wild, U P

    1995-01-15

    In LiIO(3) and BBO crystals the wave-matching conditions for femtosecond noncollinear parametric light generation at lambda = 390 nm pumping wavelength are investigated. In the LiIO(3) crystal simultaneous phase- and group-velocity-matching angles are determined. Parametric generation occurred at 0.45-2.9-mu;m wavelengths by pumping with the second harmonic of 150-fs Ti:sapphire laser pulses and is in qualitative agreement with calculated directions in both crystals. PMID:19859117

  1. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  2. Inversion domains in AlN grown on (0001) sapphire

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  3. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    SciTech Connect

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  4. Sapphire fiber interferometer for microdisplacement measurements at high temperature

    NASA Technical Reports Server (NTRS)

    Murphy, Kent A.; Feth, Shari; Vengsarkar, Ashish M.; Claus, Richard O.

    1992-01-01

    Attention is given to the use of a short-length multimode sapphire rod as an extension to a conventional Michelson interferometric configuration, but with operation of Fabry-Perot cavity-based sensor element type. The performance of such a device as an interferometric sensor is demonstrated for a case where the interference between the reflections from the sapphire-air interface and an air-metallic surface is inspected for microdisplacements of the metallic surface. A detailed account is given of the sensor's fabrication procedure; results are presented for the detection of surface-acoustic waves.

  5. Molecular-orbital model for metal-sapphire interfacial strength

    NASA Technical Reports Server (NTRS)

    Johnson, K. H.; Pepper, S. V.

    1982-01-01

    Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.

  6. Resonator power to frequency conversion in a cryogenic sapphire oscillator

    NASA Astrophysics Data System (ADS)

    Nand, Nitin R.; Parker, Stephen R.; Ivanov, Eugene N.; le Floch, Jean-Michel; Hartnett, John G.; Tobar, Michael E.

    2013-07-01

    We report on the measurement and characterization of power to frequency conversion in the resonant mode of a cryogenic sapphire loaded cavity resonator, which is used as the frequency discriminating element of a loop oscillator circuit. Fluctuations of power incident on the resonator lead to changes in radiation pressure and temperature in the sapphire dielectric, both of which contribute to a shift in the resonance frequency. We measure a modulation and temperature independent radiation pressure induced power to frequency sensitivity of -0.15 Hz/mW and find that this is the primary factor limiting the stability of the resonator frequency.

  7. Semipolar (202{sup ¯}1) GaN and InGaN quantum wells on sapphire substrates

    SciTech Connect

    Leung, Benjamin; Wang, Dili; Kuo, Yu-Sheng; Xiong, Kanglin; Song, Jie; Chen, Danti; Park, Sung Hyun; Han, Jung; Hong, Su Yeon; Choi, Joo Won

    2014-06-30

    Here, we demonstrate a process to produce planar semipolar (202{sup ¯}1) GaN templates on sapphire substrates. We obtain (202{sup ¯}1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101{sup ¯}1) and (101{sup ¯}0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202{sup ¯}1) surface and establish a growth condition in N{sub 2} carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202{sup ¯}1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.

  8. Update on the development of cryogenic sapphire mirrors and their seismic attenuation system for KAGRA

    NASA Astrophysics Data System (ADS)

    Hirose, Eiichi; Sekiguchi, Takanori; Kumar, Rahul; Takahashi, Ryutaro; the KAGRA Collaboration

    2014-11-01

    We describe the recent development of cryogenic sapphire mirrors and their seismic attenuation system (SAS) for the KAGRA gravitational wave detector. We briefly outline the current R&D status of sapphire mirror development. The SAS for the sapphire mirrors is under development, and we report the concept of the system and the sapphire suspension, and predict the performance based on a mathematical model with and without feedback control.

  9. Synthetic Cathinones ("Bath Salts")

    MedlinePlus

    ... still unknown about how synthetic cathinones affect the human brain. Researchers do know that synthetic cathinones are chemically ... of the chemicals in synthetic cathinones affect the human brain. Synthetic cathinones can cause: nosebleeds paranoia increased sociability ...

  10. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    SciTech Connect

    Xiao, Hai; Tsai, Hai-Lung; Dong, Junhang

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  11. Chemistry and origin of the Mayo Kila sapphires, NW region Cameroon (Central Africa): Their possible relationship with the Cameroon volcanic line

    NASA Astrophysics Data System (ADS)

    Paul Mbih, Kemeng; Meffre, Sebastien; Yongue, Rose Fouateu; Kanouo, Nguo Sylvestre; Jay, Thomson

    2016-06-01

    Mineralogical, chemical and geochronological studies constrained the origin of sapphires from Mayo Kila, Northwest Cameroon. The sapphires are mostly blue, with sizes ranging from 2 to 5 mm. The pale blue grains are transparent, whereas, other corundums are transparent to translucent and/or opaque. The sapphires are dominantly euhedral to sub-hedral with few polished lustrous grains, acquired features during moderate to short distance transport from a proximal source rock. Solid inclusions are limited to rutile and zircon. Trace element analysis of sapphires shows significant concentration (in ppm) in some elements: Fe (2208-14,473), Ti (82-1783), Ga (77-512), Mg (0.9-264.9), Cr (b.d.l -168) and V (1.3-82). The other elements (e.g. Sn, Nb, Ta, Th, Zr, Ni, Ce) are generally below 10 ppm. The calculated ratios for some of the selected elements show an extreme variation: Fe/Mg (43-3043), Fe/Ti (2-76), Ti/Mg (1-328), and Ga/Mg (0.4-363). They are dominantly corundum crystallized in alkaline magma (s) with few from metamorphic source (s). Trace elemental features with Hf (13,354-26,238 ppm), Th (4018-45,584 ppm) and U (7825-17,175 ppm), and Th/U (0.39-2.65) found in zircon inclusions are compatible with quantified values in magmatic crystallized zircons. The Cenozoic age (mean of 30.78 ± 0.28 Ma) obtained for zircon inclusions is close to the age of some igneous rocks found within the Cameroon Volcanic Line (e.g. rocks of the Mount Oku: 31-22 Ma), showing the same period of formation. The most probable source of the zircon host sapphires is the Oku Mountain located SW of Mayo Kila.

  12. Pulsed neutron powder diffraction at high pressure by a capacity-increased sapphire anvil cell

    NASA Astrophysics Data System (ADS)

    Okuchi, Takuo; Yoshida, Masashi; Ohno, Yoshiki; Tomioka, Naotaka; Purevjav, Narangoo; Osakabe, Toyotaka; Harjo, Stefanus; Abe, Jun; Aizawa, Kazuya; Sasaki, Shigeo

    2013-12-01

    A new design of opposed anvil cell for time-of-flight neutron powder diffraction was prepared for use at advanced pulsed sources. A couple of single-crystal sapphire sphere anvils and a gasket of fully hardened Ti-Zr null alloy were combined to compress 35 mm3 of sample volume to 1 GPa and 11 mm3 to 2 GPa of pressures, respectively. A very high-quality powder diffraction pattern was obtained at Japan Proton Accelerator Research Complex for a controversial high pressure phase of methane hydrate. The counting statistics, resolution, absolute accuracy and d-value range of the pattern were all improved to be best suitable for precise structure refinement. The sample is optically accessible to be measured by Raman and fluorescence spectroscopy during and after compression. The current cell will be an alternative choice to study hydrogenous materials of complex structures that are stable at the described pressure regime.

  13. Frequency doubled femtosecond Ti:sapphire laser with an assisted enhancement cavity

    NASA Astrophysics Data System (ADS)

    Jin-Wei, Zhang; Hai-Nian, Han; Lei, Hou; Long, Zhang; Zi-Jiao, Yu; De-Hua, Li; Zhi-Yi, Wei

    2016-01-01

    We report an enhancement cavity for femtosecond Ti:sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square (RMS) of 0.036%. Project supported by the National Basic Research Program of China (Grant Nos. 2013CB922401 and 2012CB821304) and the National Natural Science Foundation of China (Grant No. 61378040).

  14. Dual-Wavelength Operation of a Flashlamp Pumped Narrow-Linewidth Ti:Sapphire Laser

    NASA Astrophysics Data System (ADS)

    Takeda, Hideki; Akabane, Yousuke; Kannari, Fumihiko

    1994-12-01

    Dual-wavelength operation of a flashlamp-pumped Ti:sapphire laser employing a modified grazing-incidence grating resonator with two tuning mirrors is described. Spatially resolved laser spectra in the output beam at the near field indicate that a large part of each wavelength laser beam oscillates in the separated gain volume. Linewidth of ˜16 pm is achieved for both laser wavelengths. Simultaneous second-harmonic generation of the dual-wavelength laser is also demonstrated in the spectral range of 390 420 nm with a β-BaB2O4 nonlinear crystal. The phase-matching angle of each wavelength is automatically satisfied in a fixed optical arrangement by using four dispersive prisms and a lens.

  15. High dynamic range measurement of the pulse contrast in a Ti:sapphire/Nd:glass multiterawatt laser

    NASA Astrophysics Data System (ADS)

    Castanheira, Ana; Cardoso, Luís; Pires, Hugo; Figueira, Gonçalo

    2011-05-01

    We describe the design and implementation study of a high dynamic range, third order contrast-ratio measurement diagnostic for a high power laser chain. The device, known as Optical Parametric Amplification Correlator (OPAC) is based on degenerate three-wave mixing in a nonlinear crystal, it is self-referencing and compact. By measuring the idler pulse with a slow detector and a set of calibrated filters, a dynamic range of up to 1010 is achievable. The pulse contrast is to be characterized at the mJ-level, 10 Hz, Ti:sapphire pre-amplifier stage, in a time window of 100 ps.

  16. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam; Kim, Young-Min

    2015-07-15

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitution of Si for Al.

  17. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    NASA Astrophysics Data System (ADS)

    Lee, Sung Bo; Kim, Young-Min; Han, Heung Nam

    2015-07-01

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3) with the substitution of Si for Al.

  18. Highly efficient, widely tunable, 10-Hz parametric amplifier pumped by frequency-doubled femtosecond Ti:sapphire laser pulses.

    PubMed

    Zhang, J Y; Xu, Z; Kong, Y; Yu, C; Wu, Y

    1998-05-20

    We report a 10-Hz, highly efficient, widely tunable (from the visible to the IR), broadband femtosecond optical parametric generator and optical parametric amplifier (OPA) in BBO, LBO, and CBO crystals pumped by the frequency-doubled output of a regeneratively amplified Ti:sapphire laser at 400 nm. The output of the system is continuously tunable from 440 nm to 2.5 microm with a maximum overall efficiency of approximately 25% at 670 nm and an optical conversion efficiency of more than 36% in the OPA stage. The effects of the seed beam energy, the type of the crystal and the crystal length, and the pumping energy of the output of the OPA, such as the optical efficiency, the bandwidth, the pulse duration, and the group velocity mismatch between the signal and the idler and between the seeder and the pump, are investigated. The results provide useful information for optimization of the design of the system. PMID:18273287

  19. High power continuous-wave titanium:sapphire laser

    DOEpatents

    Erbert, G.V.; Bass, I.L.; Hackel, R.P.; Jenkins, S.L.; Kanz, V.K.; Paisner, J.A.

    1993-09-21

    A high-power continuous-wave laser resonator is provided, wherein first, second, third, fourth, fifth and sixth mirrors form a double-Z optical cavity. A first Ti:sapphire rod is disposed between the second and third mirrors and at the mid-point of the length of the optical cavity, and a second Ti:sapphire rod is disposed between the fourth and fifth mirrors at a quarter-length point in the optical cavity. Each Ti:sapphire rod is pumped by two counter-propagating pump beams from a pair of argon-ion lasers. For narrow band operation, a 3-plate birefringent filter and an etalon are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors are disposed between the first and second mirrors to form a triple-Z optical cavity. A third Ti:sapphire rod is disposed between the seventh and eighth mirrors at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers. 5 figures.

  20. High power continuous-wave titanium:sapphire laser

    DOEpatents

    Erbert, Gaylen V.; Bass, Isaac L.; Hackel, Richard P.; Jenkins, Sherman L.; Kanz, Vernon K.; Paisner, Jeffrey A.

    1993-01-01

    A high-power continuous-wave laser resonator (10) is provided, wherein first, second, third, fourth, fifth and sixth mirrors (11-16) form a double-Z optical cavity. A first Ti:Sapphire rod (17) is disposed between the second and third mirrors (12,13) and at the mid-point of the length of the optical cavity, and a second Ti:Sapphire rod (18) is disposed between the fourth and fifth mirrors (14,15) at a quarter-length point in the optical cavity. Each Ti:Sapphire rod (17,18) is pumped by two counter-propagating pump beams from a pair of argon-ion lasers (21-22, 23-24). For narrow band operation, a 3-plate birefringent filter (36) and an etalon (37) are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors (101, 192) are disposed between the first and second mirrors (11, 12) to form a triple-Z optical cavity. A third Ti:Sapphire rod (103) is disposed between the seventh and eighth mirrors (101, 102) at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers (104, 105).

  1. Critical parameters for grinding large sapphire window panels

    NASA Astrophysics Data System (ADS)

    Bashe, Joseph R.; Dempsey, Gene; Akwani, Ikerionwu A.; Jacoby, Keith T.; Hibbard, Douglas L.

    2007-04-01

    Advances in optical manufacturing and testing technologies for sapphire material are required to support the increasing use of large-aperture sapphire panels as windscreens for various electro-optical system applications. Single surface grinding is a crucial process step in both the figuring and finishing of optical components. Improper grinding can make subsequent polishing operations more difficult and time consuming. Poor grinding can also lead to the introduction of surface stress and sub-surface damage which can affect critical opto-mechanical performance characteristics such as strength and durability. Initial efforts have been completed at Exotic Electro-Optics under the funding of the Office of Naval Research and the Air Force Research Laboratory to investigate a number of process enhancements in the grinding of a-plane sapphire panels. The information gained from this study will ultimately provide a better understanding of the overall manufacturing process leading to optimized process time and cost. EEO has completed two sets of twelve-run Plackett-Burman designs of experiment (DOE) to study the effects of fundamental grinding parameters on sapphire panel surfaces. The relative importance of specific process parameters on window characteristics including surface roughness, stress, sub-surface damage are reported.

  2. A versatile synthetic approach for the synthesis of CoO, CoxC, and Co based nanocomposites: tuning kinetics and crystal phase with different polyhydric alcohols

    SciTech Connect

    Huba, ZJ; Carpenter, EE

    2014-07-04

    The solution synthesis of magnetic nanoparticles allows for precise control of a particle's shape, size, and crystal phase on the nanoscale, key parameters in tuning the intrinsic magnetic properties of nanoparticles. In this study, we investigate the role of polyhydric alcohols for the solution synthesis of cobalt carbide nanoparticles, a newly discovered hard ferromagnetic material. The oxidative stability of the polyhydric alcohol at reaction temperatures plays a significant role in the kinetics of carbide formation, as well as the phase produced (Co2C vs. Co3C). By tuning the oxidation rate of the polyhydric alcohol, composites of CoO, CoxC, and Co phases can be produced, allowing for magnetic composites comprised of anti ferromagnetic, hard ferromagnetic and soft ferromagnetic phases.

  3. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    NASA Astrophysics Data System (ADS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  4. Synthesis and crystal structure of two synthetic oxofluoride framework compounds--Co2TeO3F2 and Co2SeO3F2.

    PubMed

    Hu, Shichao; Johnsson, Mats

    2012-11-01

    Two new isostructural Co(2+) containing tellurium and selenium oxofluoride compounds Co(2)TeO(3)F(2) and Co(2)SeO(3)F(2) are synthesized and their structures determined by single crystal X-ray diffraction. They crystallize in the orthorhombic space group Pnma with the unit cell parameters a = 7.3810(5) Å, b = 10.1936(7) Å, c = 5.3013(3) Å and a = 7.2655(8) Å, b = 10.0013(13) Å, c = 5.3564(6) Å, respectively. The Co(II) ion has octahedral coordination [CoO(3)F(3)] and builds up a 3D framework by corner- and edge sharing. The Se(IV) and the Te(IV) ions have the coordinations [SeO(3)E] and [TeO(3)E] respectively where E is the lone-pair electrons. The Se(IV) and Te(IV) ions are isolated from each other and bond only to the [CoO(3)F(3)] polyhedra. The electronegative element fluorine takes the role of a network builder like oxygen and helps to form the 3D framework structure. This is a difference compared to many oxohalide compounds containing Cl and Br where the halide ions are terminating ions preventing a 3D network from being formed. Long range antiferromagnetic interactions dominate at temperatures < 20 K. The magnetic susceptibility follows the Curie-Weiss law above 25 K with the Curie constant C = 5.62 emu K mol(-1), the Weiss temperature θ = -56 K and the effective magnetic moment μ(eff) = 4.74 μ(B) per cobalt atom. PMID:22968840

  5. "Invisible" gold and PGE elements in synthetic crystals of sphalerite and covellite: A EPMA, LA-ICP-MS and XAFS study

    NASA Astrophysics Data System (ADS)

    Tonkacheev, Dmitry; Chareev, Dmitry; Abramova, Vera; Tagirov, Boris

    2016-04-01

    Sphalerite and covellite are widespread minerals in the different genetic types of deposits and forms under the various conditions. The purpose of this work is to determine the possible range of concentration and chemical state of Au and PGE (Pt, Pd, Rh) in sphalerite (Zn,Fe) S and covellite (CuS). These minerals were synthesized using gas transport and salt flux techniques. The crystals of ZnS were grown using the gas transport method at 850°C and the salt flux one using NaCl/KCl, CsCl/NaCl/KCl, and LiCl/RbCl eutectic mixtures at 850, 645 and 470°C, respectively. CuS crystals were synthesized using the salt flux method in RbCl/LiCl melt at 470 and 340°C. The trace metal activity was always controlled by the presence of pure metal or its sulfide, and, therefore, the concentration of these elements in synthesized phases represent the maximum possible value for given T/f(S2) synthesis parameters. The LA-ICP-MS and/or EPMA techniques were used to determine the Au concentration in synthesized phases. The concentration of Au in sphalerite, synthesized at 850°C with admixture of Cd, Se, In, Fe, and Mn, reached 0.3wt%, whereas the sphalerite cell parameter extremely increased up to 5.4161Å relatively to 5.4060 Å for pure ZnS. It was found that the observed high Au concentration is caused by the presence of In (2091±46 ppm Au in sample with Fe and In in comparison with 14±7 for Se-bearing ZnS, 94±12 ppm for Fe-Mn-bearing sphalerite, and 96±46 for Fe-bearing sphalerite. The concentration of Au in Fe-bearing sphalerite synthesized at 645°C does not exceed 5 ppm. Therefore, increase of temperature results in the increase of Au concentration in sphalerite. The concentration of Au in another Fe-bearing-sphalerite series synthesized using gas transport method at 850°C various from 200 to 500 ppm and depends on the iron content. This fact could be related to the oxidation state or Fe in ZnS-FeS solid solution series. The concentration of Pt and Pd, Rh in sphalerite is

  6. Arsenic speciation in synthetic gypsum (CaSO4·2H2O): A synchrotron XAS, single-crystal EPR, and pulsed ENDOR study

    NASA Astrophysics Data System (ADS)

    Lin, Jinru; Chen, Ning; Nilges, Mark J.; Pan, Yuanming

    2013-04-01

    Gypsum (CaSO4·2H2O) is a major by-product of mining and milling processes of borate, phosphate and uranium deposits worldwide and, therefore, potentially plays an important role in the stability and bioavailability of heavy metalloids, including As, in tailings and surrounding areas. Gypsum containing 1900 and 185 ppm As, synthesized with Na2HAsO4·7H2O and NaAsO2 in the starting materials, respectively, have been investigated by synchrotron X-ray absorption spectroscopy (XAS), single-crystal electron paramagnetic resonance spectroscopy (EPR), and pulsed electron nuclear double resonance spectroscopy (ENDOR). Quantitative analyses of As K edge XANES and EXAFS spectra show that arsenic occurs in both +3 and +5 oxidation states and the As3+/As5+ value varies from 0.35 to 0.79. Single-crystal EPR spectra of gamma-ray-irradiated gypsum reveal two types of arsenic-associated oxyradicals: [AsO3]2- and an [AsO2]2-. The [AsO3]2- center is characterized by principal 75As hyperfine coupling constants of A1 = 1952.0(2) MHz, A2 = 1492.6(2) MHz and A3 = 1488.7(2) MHz, with the unique A axis along the S-O1 bond direction, and contains complex 1H superhyperfine structures that have been determined by pulsed ENDOR. These results suggest that the [AsO3]2- center formed from electron trapping on the central As5+ ion of a substitutional (AsO4)3- group after removal of an O1 atom. The [AsO2]2- center is characterized by its unique A(75As) axis approximately perpendicular to the O1-S-O2 plane and the A2 axis along the S-O2 bond direction, consistent with electron trapping on the central As3+ ion of a substitutional (AsO3)3- group after removal of an O2 atom. These results confirm lattice-bound As5+ and As3+ in gypsum and point to potential application of this mineral for immobilization and removal of arsenic pollution.

  7. The crystal structure of N4-methylcytosine.guanosine base-pairs in the synthetic hexanucleotide d(CGCGm4CG).

    PubMed Central

    Cervi, A R; Guy, A; Leonard, G A; Téoule, R; Hunter, W N

    1993-01-01

    The structure of d(CGCGm4CG) were m4C = N4-methylcytosine has been determined by crystallographic methods. The crystals are multifaced prisms, with orthorhombic space group P2(1)2(1)2(1) and unit cell dimensions of a = 17.98, b = 30.77 and c = 44.75A. The asymmetric unit consists of one duplex of hexanucleotide and 49 waters. The R-factor is 0.189 for 1495 reflections with F > or = sigma(F) to a resolution limit of 1.8A. The double helix has a Z-DNA type structure which appears to be intermediate in structure to the two previously characterised structure types for Z-DNA hexamers. The two m4C.G base-pairs adopt structures that are very similar to those of the equivalent base-pairs in the structure of the native sequence d(CGCGCG) except for the presence of the methyl groups which are trans to the N3 atoms of their parent nucleotides and protrude into the solvent region. The introduction of the modified base-pairs into the d(CGCGCG) duplex appears to have a minimal effect on the overall base-pair morphology of the Z-DNA duplex. Images PMID:8284207

  8. Anopheles gambiae odorant binding protein crystal complex with the synthetic repellent DEET: implications for structure-based design of novel mosquito repellents.

    PubMed

    Tsitsanou, K E; Thireou, T; Drakou, C E; Koussis, K; Keramioti, M V; Leonidas, D D; Eliopoulos, E; Iatrou, K; Zographos, S E

    2012-01-01

    Insect odorant binding proteins (OBPs) are the first components of the olfactory system to encounter and bind attractant and repellent odors emanating from various sources for presentation to olfactory receptors, which trigger relevant signal transduction cascades culminating in specific physiological and behavioral responses. For disease vectors, particularly hematophagous mosquitoes, repellents represent important defenses against parasitic diseases because they effect a reduction in the rate of contact between the vectors and humans. OBPs are targets for structure-based rational approaches for the discovery of new repellent or other olfaction inhibitory compounds with desirable features. Thus, a study was conducted to characterize the high resolution crystal structure of an OBP of Anopheles gambiae, the African malaria mosquito vector, in complex with N,N-diethyl-m-toluamide (DEET), one of the most effective repellents that has been in worldwide use for six decades. We found that DEET binds at the edge of a long hydrophobic tunnel by exploiting numerous non-polar interactions and one hydrogen bond, which is perceived to be critical for DEET's recognition. Based on the experimentally determined affinity of AgamOBP1 for DEET (K (d) of 31.3 μΜ) and our structural data, we modeled the interactions for this protein with 29 promising leads reported in the literature to have significant repellent activities, and carried out fluorescence binding studies with four highly ranked ligands. Our experimental results confirmed the modeling predictions indicating that structure-based modeling could facilitate the design of novel repellents with enhanced binding affinity and selectivity. PMID:21671117

  9. Single phase (112bar2) AlN grown on (101bar0) sapphire by metalorganic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J.

    2015-03-01

    Heteroepitaxial growth of AlN buffer layers directly on (101bar0) sapphire substrates by metalorganic vapour phase epitaxy has been investigated. A single-step growth procedure without a sapphire nitridation was employed resulting in mirror-like crack free ≈ 1.1 - 1.6 μm thick AlN layers of single phase (112bar2) orientation. Trimethylaluminum pre-dose time and reactor pressure were optimized for surface roughness and crystal quality. The crystal quality was found to degrade with increasing pre-dose time and also reactor pressure. The smallest full width at half maximum value for on-axis X-ray rocking curve of the (112bar2) AlN layers was about 610 arcsec and 1480 arcsec along [1bar1bar23]AlN and [11bar00]AlN, respectively. The surface roughness, measured by atomic force microscopy using a 10 × 10 μm2 area, was in the range 2.6-3.5 nm. A basal stacking fault density of (7±1)×105 cm-1 was estimated by transmission electron microscopy.

  10. Crystal structure of new synthetic Ca,Na carbonate-borate Ca2Na(Na x Ca0.5 - x )[B{3/ t }B{2/δ}O8(OH)(O1 - x OH x )](CO3)

    NASA Astrophysics Data System (ADS)

    Yamnova, N. A.; Borovikova, E. Yu.; Gurbanova, O. A.; Dimitrova, O. V.; Zubkova, N. V.

    2012-05-01

    New Ca,Na carbonate-borate Ca2Na(Na x Ca0.5 - x ) [B{3/ t }B{2/Δ}O8(OH)(O1 - x OH x )](CO3) crystals ( x ˜ 0.4) have been synthesized by the hydrothermal method in the Ca(OH)2-H3BO3-Na2CO3-NaCl-system at t = 250°C and P = 70-80 atm; the structure parameters are found to be a = 11.1848(3) Å, b = 6.4727(2) Å, c = 25.8181(7) Å, β = 96.364(3)°, V = 1857.60(9) Å3, sp. gr. C2/ c, Z = 8, and ρcalcd = 2.801 g/cm3 (Xcalibur S autodiffractometer (CCD), 2663 reflections with I > 2σ ( I), direct solution, refinement by the least-squares method in the anisotropic approximation of thermal atomic vibrations, hydrogen localization, R 1 = 0.0387). The structure is based on boron-oxygen layers of pentaborate radicals 5(2Δ + 3T). Ca and Na polyhedra and CO3 triangles are located between the layers. A crystallochemical analysis of the new Ca,Na carbonate-borate has established its similarity to natural Na,Ca pentaborates (heidornite and tuzlaite) and synthetic Na,Ba-decaborate.

  11. Neutron method for NDA in the Sapphire Project

    SciTech Connect

    Lewis, K.D.

    1995-12-31

    The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the {sup 235}U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for {sup 235}U content.

  12. A neutron method for NDA analysis in the SAPPHIRE Project

    SciTech Connect

    Lewis, K.D.

    1995-01-09

    The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content.

  13. Measurements of prompt radiation induced conductivity of alumina and sapphire.

    SciTech Connect

    Hartman, E. Frederick; Zarick, Thomas Andrew; Sheridan, Timothy J.; Preston, Eric F.

    2011-04-01

    We performed measurements of the prompt radiation induced conductivity in thin samples of Alumina and Sapphire at the Little Mountain Medusa LINAC facility in Ogden, UT. Five mil thick samples were irradiated with pulses of 20 MeV electrons, yielding dose rates of 1E7 to 1E9 rad/s. We applied variable potentials up to 1 kV across the samples and measured the prompt conduction current. Analysis rendered prompt conductivity coefficients between 1E10 and 1E9 mho/m/(rad/s), depending on the dose rate and the pulse width for Alumina and 1E7 to 6E7 mho/m/(rad/s) for Sapphire.

  14. Inversion domains in GaN grown on sapphire

    SciTech Connect

    Romano, L.T.; Northrup, J.E.; OKeefe, M.A.

    1996-10-01

    Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. {copyright} {ital 1996 American Institute of Physics.}

  15. GaN grown on nano-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

    2015-04-01

    High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

  16. Progress Report for a New Cryogenic Sapphire Oscillator

    NASA Technical Reports Server (NTRS)

    Wang, Rabi T.; Dick, G. J.; Tjoelker, R. L.

    2006-01-01

    We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

  17. SAPPHIRE WILDERNESS STUDY AREA AND CONTIGUOUS ROADLESS AREAS, MONTANA.

    USGS Publications Warehouse

    Wallace, C.A.; Bannister, D'Arcy P.

    1984-01-01

    Geologic and mineral studies located sulfide-bearing quartz veins with demonstrated metallic mineral resources in granitic and metasedimentary rocks in several parts of the Sapphire Wilderness Study Area and contiguous roadless areas, Montana. Mines and prospects contain demonstrated resources of gold, silver, lead, copper, and zinc. Gold-bearing placers occur downstream from each of these vein occurrences; most of the gold placers have a probable mineral-resource potential. A replacement body of sulfide minerals is present at the Senate mine adjacent to the Sapphire Wilderness Study Area. Around the Senate mine is an area of probable mineral-resource potential that extends into the study area. There is little promise for the occurrence of energy resources in the study area.

  18. Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

    NASA Astrophysics Data System (ADS)

    Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

    1982-05-01

    This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

  19. Surface modification of sapphire for enhanced infrared window performance

    SciTech Connect

    McHargue, C.J.; Joslin, D.L.; Williams, J.M.; O`Hern, M.E.

    1993-09-01

    Two ion implantation conditions were evaluated for improving the mechanical performance of sapphire IR window material. Both increased the average strength as measured by 4-point bend tests and were effective in preventing the propagation of surface flaws. Ion implantation that produced a damaged crystalline surface improved the reliability at lower stresses more than the implantation that produced an amorphous surface. Neither process significantly affected the IR transmission.

  20. High repetition nanosecond Ti:sapphire laser for photoacoustic microscopy

    NASA Astrophysics Data System (ADS)

    Yang, Timothy K.; Kim, Min Ju; Choi, Seul Ki; Bae, Sung Chul

    2015-03-01

    High resolution optical imaging technologies, such as optical coherence tomography or multiphoton microscopy has given us an opportunity to do in vivo imaging noninvasively. However, due to the high laser scattering, these optical imaging techniques were prohibited from obtaining high resolution in the diffusive regime. Photoacoustic microscopy (PAM) can overcome this soft depth limit and maintain high resolution at the same time. In the past, PAM was limited to using an Nd:YAG laser, which requires an optical parametric oscillator (OPO) to obtain wavelengths selectively other than the second harmonic. However, OPO is unstable and cumbersome to control. We replaced the Nd:YAG laser and the OPO with a nanosecond pulsed Ti:Sapphire laser to give PAM more flexibility in the speed and the input wavelength while reducing the footprint of our system. This also increased our stability by removing OPO. Using a Ti:Sapphire laser allowed us to increase the pulse repetition rate to 100-500 kHz. Normally, micro-lasers with this pulse repetition rate will suffer from a significant decrease in pulse energy, but we were able to maintain stable pulses with a few hundreds nJ. Also, a well-known advantage of a Ti:Sapphire laser is its tunability from 650 to 1100 nm. For our PAM application, we used a range from 700 to 900 nm to obtain significant functional images. This added flexibility can help acquire functional images such as the angiogenesis process with better contrast. Here, we present a nanosecond Ti:Sapphire laser designated for PAM applications with increased contrast imaging.

  1. [MORPHOLOGICAL FEATURES OF NEUTROPHILS AND EOSINOPHILS GRANULES IN SAPPHIRE MINKS].

    PubMed

    Uzenbaeva, L B; Kizhina, A G; Ilyukha, V A

    2015-01-01

    It has been established that sapphire minks have abnormality of subcellular structure of blood and bone marrow neutrophils and eosinophils. The abnormality consists in forming of abnormal "giant" granules. The si- ze and the number of abnormal granules significantly change during maturation of leucocytes in bone marrow. We have found differences between abnormal granules forming in neutrophils and eosinophils that depend on the maturing stage and the cells life cycle duration as well as morphofunctional features of these granulocytes. PMID:26863773

  2. Fabrication of Sapphire Micro Optics by F 2-Laser Ablation

    NASA Astrophysics Data System (ADS)

    Wiesner, Markus; Ihlemann, Jürgen

    F2-laser irradiation enables high precision ablation of sapphire. A mask projection system with high numerical aperture, equipped with an optical coherence tomography module for focus control, delivers submicron resolution. High fluences of up to 10 J/cm2 lead to smooth, crack free surfaces. Various micro-optical elements like fiber tip lenses, gratings, and diffractive optical elements can be manufactured this way.

  3. Microstructure evolution in carbon-ion implanted sapphire

    SciTech Connect

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-15

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10{sup 17} or 2x10{sup 17} cm{sup -2} and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L{sub 1}) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L{sub 2}) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L{sub 3}) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  4. A Compact Ti:Sapphire Laser With its Third Harmonic Generation (THG) for an Airborne Ozone Differential Absorption Lidar (DIAL) Transmitter

    NASA Technical Reports Server (NTRS)

    Chen, Songsheng; Storm, Mark E.; Marsh, Waverly D.; Petway, Larry B.; Edwards, William C.; Barnes, James C.

    2000-01-01

    A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonic at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After being experimentally compared with Beta-Barium Borate (beta - BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5 x 5 x 20 cu mm) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900 nm and its third harmonic at 300 nm. The desired high ultraviolet (UV) output pulse energy is more than 30 mJ at 300 nm and the energy conversion efficiency from 900 nm to 300 nm is 30%.

  5. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.

    PubMed

    Beardsley, Ryan; Akimov, Andrey V; Greener, Jake D G; Mudd, Garry W; Sandeep, Sathyan; Kudrynskyi, Zakhar R; Kovalyuk, Zakhar D; Patanè, Amalia; Kent, Anthony J

    2016-01-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures. PMID:27256805

  6. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

    PubMed Central

    Beardsley, Ryan; Akimov, Andrey V.; Greener, Jake D. G.; Mudd, Garry W.; Sandeep, Sathyan; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Kent, Anthony J.

    2016-01-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures. PMID:27256805

  7. Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

    NASA Astrophysics Data System (ADS)

    Beardsley, Ryan; Akimov, Andrey V.; Greener, Jake D. G.; Mudd, Garry W.; Sandeep, Sathyan; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Kent, Anthony J.

    2016-06-01

    Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures.

  8. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2016-06-01

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (ScxAl1-xN) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S21 measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  9. Strengthening sapphire at elevated temperatures by SiO 2 films

    NASA Astrophysics Data System (ADS)

    Feng, Li-Ping; Liu, Zheng-Tang; Li, Qiang

    2007-04-01

    SiO 2 films have been prepared on sapphire by radio frequency magnetron reactive sputtering in order to increase the optical and mechanical properties of infrared windows and domes of sapphire at elevated temperatures. Infrared transmission and flexural strength of uncoated and coated sapphires have been investigated at different temperatures. SiO 2 films were shown to have apparent antireflective effect on sapphire substrate at room temperature. With increasing temperature, the coated sapphires have larger average transmission than the uncoated ones. The temperature was proven to only weakly affect the absorption coefficient and antireflection capability of the deposited films. It is also indicated that the flexural strengths of the c-axis sapphire samples coated with SiO 2 films are increased by 1.2 and 1.5 times than those of uncoated at 600 and 800 °C, respectively.

  10. [Gemology characterization and identification of beryllium diffused, heated and untreated bicolor sapphires from Changle City, China].

    PubMed

    Chen, Tao; Yang, Ming-xing

    2012-03-01

    Be-diffused, heated and untreated bicolor sapphires (blue and yellow) from Changle City, Shandong Province, China were studied by using standard gemological methods, ultraviolet-visible (UV-Vis) spectroscopy, infrared (IR) spectroscopy, electron microprobe, and laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) to obtain the spectra characterization, and to suggest identification methods for them. Only Fe(3+)-Fe3+ absorption bands formed in ultraviolet region appear in Be-diffused bicolor sapphire, which is especially strong at 377 nm. In IR absorption spectra, absorption peak at 3 310 cm(-1) appears in heated and untreated bicolor sapphires, while it disappears in Be-diffused bicolor sapphire. Therefore, UV-Vis and IR absorption spectra can be used to identify Be-diffused, heated and untreated bicolor sapphires. On the other hand, methylene iodide immersion observation also can be used to identify Be-diffused bicolor sapphire. PMID:22582625

  11. Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications

    NASA Astrophysics Data System (ADS)

    Wuu, Dong-Sing; Ou, Sin-Liang; Horng, Ray-Hua; Ravadgar, Parvaneh; Wang, Tzu-Yu; Lee, Hsin-Ying

    2012-02-01

    The β-Ga2O3 films were grown on (0001) sapphire at 500 °C by metal organic chemical vapor deposition. In the analysis of crystal structure, we found that the (-201) oriented single crystal β-Ga2O3 epilayer can be obtained under low chamber pressure of 15 torr. Moreover, a metal-semiconductor-metal solar-blind deep ultraviolet photodetector was fabricated with the β-Ga2O3 epilayer. As the bias voltage is 5 V, the photodetector exhibits a relatively low dark current about 0.2 pA, which induced by the highly resistive nature of the β-Ga2O3 thin films. From the responsivity result, it can be observed that photodetector shows a maximum responsivity at 260 nm, revealing the β-Ga2O3 photodetector was really solar-blind. The responsivity of the photodetector was as high as 20.1 A/W with an applied bias of 5 V and an incident light wavelength of 260 nm. The improved performance is attributed to the high quality of β-Ga2O3 epilayer.

  12. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  13. ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing.

    PubMed

    Xiang, X; Zu, X T; Zhu, S; Wei, Q M; Zhang, C F; Sun, K; Wang, L M

    2006-05-28

    ZnO nanoparticles were fabricated in sapphire (α-Al(2)O(3) single crystal) by Zn ion implantation (48 keV) at an ion fluence of 1 × 10(17) cm(-2) and subsequent thermal annealing in a flowing oxygen atmosphere. Transmission electron microscopy (TEM) analysis revealed that metallic Zn nanoparticles of 3-10 nm in dimensions formed in the as-implanted sample and that ZnO nanoparticles of 10-12 nm in dimensions formed after annealing at 600 °C. A broad absorption band, peaked at 280 nm, appeared in the as-implanted crystal, due to surface plasma resonance (SPR) absorption of metallic Zn nanoparticles. After annealing at 600 °C, ZnO nanoparticles resulted in an exciton absorption peak at 360 nm. The photoluminescence (PL) of the as-implanted sample was very weak when using a He-Cd 325 nm line as the excitation source. However, two emission peaks appeared in the PL spectrum of ZnO nanopraticles, i.e., one ultraviolet (UV) peak at 370 nm and the other a green peak at 500 nm. The emission at 500 nm is stronger and has potential applications in green/blue light-emitting devices. PMID:21727517

  14. European multi-center evaluation of the Abbott Cell-Dyn sapphire hematology analyzer.

    PubMed

    Müller, Robert; Mellors, Ian; Johannessen, Berit; Aarsand, Aasne K; Kiefer, Paul; Hardy, John; Kendall, Richard; Scott, Colin Stephen

    2006-01-01

    This study presents the results of performance evaluations of the Cell-Dyn Sapphire (CD-Sapphire) undertaken by 3 study sites in Europe. These studies focused on the routine blood count analyses with specific consideration of precision and imprecision, linearity, inter-instrument correlations, and white blood cell differential and flagging efficiencies. The CD-Sapphire was compared to the Cell-Dyn CD4000, Bayer Advia 120, Beckman Coulter GenS, and reference microscopy. PMID:16513543

  15. Treatment of benign urethral strictures using a sapphire tipped neodymium:YAG laser.

    PubMed

    Smith, J A

    1989-11-01

    Sapphire tips increase the energy density and cutting effect of a neodymium:YAG laser. Sapphire tipped neodymium:YAG laser fibers were used to perform urethrotomy in 24 men with benign urethral strictures. The cutting effect was inadequate in 10 patients. Of the 24 patients 16 (67%) had a recurrent stricture within 1 year. Sapphire tipped neodymium:YAG laser fibers offer no apparent advantage over cold knife urethrotomy for treatment of benign urethral strictures. PMID:2810498

  16. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  17. Sapphire screws and strength test on them at liquid nitrogen temperature.

    PubMed

    Hirose, Eiichi; Sakakibara, Yusuke; Igarashi, Yukihiko; Ishii, Takashi

    2014-10-01

    We fabricated several sapphire screw threads and performed a strength test on them at the liquid nitrogen temperature of 77 K. The screw threads were subjected to and withstood a 3000 N load. To the best of our knowledge, this is the first strength test of sapphire screw threads at a cryogenic temperature. The result suggests a new way of connecting sapphire components. Although sapphire is already used in many applications, the result may provide a new way to use the material as a structural element in even more applications. PMID:25362427

  18. Sapphire screws and strength test on them at liquid nitrogen temperature

    NASA Astrophysics Data System (ADS)

    Hirose, Eiichi; Sakakibara, Yusuke; Igarashi, Yukihiko; Ishii, Takashi

    2014-10-01

    We fabricated several sapphire screw threads and performed a strength test on them at the liquid nitrogen temperature of 77 K. The screw threads were subjected to and withstood a 3000 N load. To the best of our knowledge, this is the first strength test of sapphire screw threads at a cryogenic temperature. The result suggests a new way of connecting sapphire components. Although sapphire is already used in many applications, the result may provide a new way to use the material as a structural element in even more applications.

  19. Influence of the X-site composition on tourmaline's crystal structure: investigation of synthetic K-dravite, dravite, oxy-uvite, and magnesio-foitite using SREF and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Berryman, E. J.; Wunder, B.; Ertl, A.; Koch-Müller, M.; Rhede, D.; Scheidl, K.; Giester, G.; Heinrich, W.

    2016-02-01

    The crystal structures of synthetic K-dravite [XKYMg 3 Z Al 6 T Si6O18(BO3) 3 V (OH) 3 W (OH)], dravite [XNaYMg 3 Z Al 6 T Si6O18(BO3) 3 V (OH) 3 W (OH)], oxy-uvite [XCaYMg 3 Z Al 6 T Si6O18(BO3) 3 V (OH) 3 W O], and magnesio-foitite [X☐Y(Mg2Al)ZAl 6 T Si6O18(BO3) 3 V (OH) 3 W (OH)] are investigated by polarized Raman spectroscopy, single-crystal structure refinement (SREF), and powder X-ray diffraction. The use of compositionally simple tourmalines characterized by electron microprobe analysis facilitates the determination of site occupancy in the SREF and band assignment in the Raman spectra. The synthesized K-dravite, oxy-uvite, and magnesio-foitite have significant Mg-Al disorder between their octahedral sites indicated by their respective average < Y-O> and < Z-O> bond lengths. The Y- and Z-site compositions of oxy-uvite (YMg1.52Al1.48(10) and ZAl4.90Mg1.10(15)) and magnesio-foitite (YAl1.62Mg1.38(18) and ZAl4.92Mg1.08(24)) are refined from the electron densities at each site. The Mg-Al ratio of the Y and Z sites is also determined from the relative integrated peak intensities of the Raman bands in the O-H stretching vibrational range (3250-3850 cm-1), producing values in good agreement with the SREF data. The unit cell volume of tourmaline increases from magnesio-foitite (1558.4(3) Å3) to dravite (1569.5(4)-1571.7(3) Å3) to oxy-uvite (1572.4(2) Å3) to K-dravite (1588.1(2) Å3), mainly due to lengthening of the crystallographic c-axis. The increase in the size of the X-site coordination polyhedron from dravite (Na) to K-dravite (K) is accommodated locally in the crystal structure, resulting in the shortening of the neighboring O1- H1 bond. In oxy-uvite, Ca2+ is locally associated with a deprotonated W (O1) site, whereas vacant X sites are neighbored by protonated W ( O1) sites. Increasing the size of the X-site-occupying ion does not detectably affect bonding between the other sites; however, the higher charge of Ca and the deprotonated W ( O1) site in

  20. Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

    SciTech Connect

    Hellmann, J.R.; Chou, Y.S.

    1995-10-01

    The effect of zirconia (ZrO{sub 2}) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 {mu}m were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 {+-} 59 to 241 {+-} 43 MPa for 0.15 to 1.45 {micro}m thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system.

  1. Thermodynamic effects of calcium and iron oxides on crystal phase formation in synthetic gasifier slags containing from 0 to 27wt.% V2O3

    SciTech Connect

    Nakano, Jinichiro; Duchesne, Marc; Bennett, James; Kwong, Kyei -Sing; Nakano, Anna; Hughes, Robin

    2014-11-15

    Thermodynamic phase equilibria in synthetic slags (Al2O3–CaO–FeO–SiO2–V2O3) were investigated with 0–27 wt.% vanadium oxide corresponding to industrial coal–petroleum coke (petcoke) feedstock blends in a simulated gasifier environment. Samples encompassing coal–petcoke mixed slag compositions were equilibrated at 1500 °C in a 64 vol.% CO/36 vol.% CO2 atmosphere (Po2 ≈ 10–8 atm at 1500 °C) for 72 h, followed by rapid water quench, then analyzed by inductively coupled plasma optical emission spectrometry, X-ray diffractometry, and scanning electron microscopy with wavelength dispersive spectroscopy. With increasing CaO content, FeO content, or both; the slag homogeneity region expanded and a composition range exhibiting crystals was reduced. The mullite (Al6Si2O13) crystalline phase was not present in the slags above 9 wt.% FeO while the karelianite (V2O3) crystalline phase was always present in compositions studied if a sufficient amount of vanadium existed in the slag. Furthermore, based on the present experimental equilibrium evaluation, a set of isothermal phase diagrams showing effects of CaO and FeO on thermodynamic phase stabilities in the vanadium-bearing slags is proposed. Some uses of the diagrams for potential industrial practice are discussed.

  2. Thermal resistance of indium coated sapphire-copper contacts below 0.1 K

    NASA Astrophysics Data System (ADS)

    Eisel, T.; Bremer, J.; Koettig, T.

    2014-11-01

    High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (Ø 20 mm × 1.5 mm) to investigate the phonon scattering at the boundaries. All sandwiches apply indium foils as intermediate layers on both sides of the sapphire. Additionally to the indium foils, thin indium films are vapour deposited onto both sides of one rough and one polished sapphire in order to improve the contact to the sapphire. Significantly different thermal resistances have been found amongst the investigated sandwiches. The lowest total thermal resistivity (roughly 26 cm2 K4/W at 30 mK helium temperature) is achieved across a sandwich consisting of a polished sapphire with indium vapour deposition. The thermal boundary resistance between indium and sapphire is estimated from the total thermal resistivity by assuming the scattering at only one boundary, which is the warm sapphire boundary where phonons impinge, and taking the scattering in the sapphire bulk into account. The so derived thermal boundary resistance agrees at low temperatures very well with the acoustic mismatch theory.

  3. Injection mode-locking Ti-sapphire laser system

    DOEpatents

    Hovater, James Curtis; Poelker, Bernard Matthew

    2002-01-01

    According to the present invention there is provided an injection modelocking Ti-sapphire laser system that produces a unidirectional laser oscillation through the application of a ring cavity laser that incorporates no intracavity devices to achieve unidirectional oscillation. An argon-ion or doubled Nd:YVO.sub.4 laser preferably serves as the pump laser and a gain-switched diode laser serves as the seed laser. A method for operating such a laser system to produce a unidirectional oscillating is also described.

  4. Electroform replication of smooth mirrors from sapphire masters

    NASA Technical Reports Server (NTRS)

    Altkorn, R.; Chang, J.; Haidle, R.; Takacs, P. Z.; Ulmer, M. P.

    1992-01-01

    A sapphire master was used to produce mirrors that exhibit mid-to-high-frequency roughness as low as 3 A. The fabrication procedure and potential applications in X-ray astronomy are discussed. It is shown that foils replicated from flat smooth mandrels should offer at least equivalent HF roughness and significantly lower mid-frequency ripple than those coated with lacquer. A ceramic-surface mandrel could also be expected to last far longer without the need for repolishing than electroless nickel-coated mandrels.

  5. cw passive mode locking of a Ti:sapphire laser

    SciTech Connect

    Sarukura, N.; Ishida, Y.; Nakano, H.; Yamamoto, Y. )

    1990-02-26

    cw passive mode locking of a Ti:sapphire laser is achieved with 1,1{prime}-dietyl-2,2{prime}-dicarbocyanine iodide as the saturable absorber dye, using a 5 {mu}m thin dye jet flow. The pulse width is 4.0 ps, which is almost the transform-limited pulse for the observed spectrum width. The output power is {similar to}50 mW, when it is pumped by a 5 W cw Ar laser, while the tuning range is 745--755 nm.

  6. Designable buried waveguides in sapphire by proton implantation

    SciTech Connect

    Laversenne, L.; Hoffmann, P.; Pollnau, M.; Moretti, P.; Mugnier, J.

    2004-11-29

    Buried and stacked planar as well as buried single and parallel channel waveguides are fabricated in sapphire by proton implantation. Good control of the implantation parameters provides excellent confinement of the guided light in each structure. Low propagation losses are obtained in fundamental-mode, buried channel waveguides without postimplantation annealing. Choice of the implantation parameters allows one to design mode shapes with different ellipticity and/or mode asymmetry in each orthogonal direction, thus demonstrating the versatility of the fabrication method. Horizontal and vertical parallelization is demonstrated for the design of one- or two-dimensional waveguide arrays in hard crystalline materials.

  7. Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

    NASA Astrophysics Data System (ADS)

    Vennéguès, P.; Tendille, F.; De Mierry, P.

    2015-08-01

    This work describes, using mainly transmission electron microscopy as an investigation tool, the nature and behaviour of the crystalline defects which are present in (11-22) semipolar GaN films grown epitaxially on patterned r-sapphire substrates using a 3 step growth process. The microstructure at these different growth stages is described. The independent 3D-crystallites nucleated on the substrate surface contain threading dislocations resulting from the epitaxy on c-sapphire facets and basal stacking faults (BSFs), mainly in the  -c-wings. These defects are concentrated in a few hundred nanometre wide stripe-like regions emerging on the top facet of the islands. By a careful choice of the growth conditions, these defective regions may be overgrown by defect-free material, blocking their propagation towards the coalesced surface. However, when the 3D crystals coalesce, new dislocations together with very few BSFs are created at the coalescence boundaries. These coalescence defects propagate to the surface of the films in (0001) planes. In summary, the control of the nucleation and propagation of the crystalline defects allows obtaining large area semipolar films with very low defect densities: 7   ×   107 cm-2 for TDs and 70 cm-1 for BSFs.

  8. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Su, Xilin; Yun, Feng

    2016-07-01

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ˜20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  9. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Wang, Junxi; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin; Lan, Ding

    2014-02-15

    Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

  10. Frequency Stability of 1X10(sup -13) in a Compensated Sapphire Oscillator Operating Above 77 K

    NASA Technical Reports Server (NTRS)

    Santiago, D. G.; Dick, G. J.; Wang, R. T.

    1996-01-01

    We report on a frequency-stable temperature compensated sapphire oscillator (CSO) at temperatures above 77 K. Previously, high stability in sapphire oscillators had only been obtained with liquid helium cooling.

  11. Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

    NASA Technical Reports Server (NTRS)

    Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

    2010-01-01

    Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

  12. Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics

    NASA Technical Reports Server (NTRS)

    Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, james; Kauder, Lonny; Cavanaugh, John

    2008-01-01

    Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

  13. Experimental study on the self-mode-locked Ti:sapphire laser

    NASA Astrophysics Data System (ADS)

    Qi-rong, Xing; Wei-li, Zhang; Wei, Lu; Yoo, K. M.; Lueng, J.

    1996-01-01

    The role of gain aperture in self-mode-locked Ti:sapphire laser was verified in our experiments. The observation of self-Q switching of self-mode-locked Ti:sapphire laser is reported. And tuning pulse duration from 50 fs to 14.5 ps was achieved.

  14. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    NASA Astrophysics Data System (ADS)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-12-01

    Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  15. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

    SciTech Connect

    Li, Xiao-Hang E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D. E-mail: dupuis@gatech.edu; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-26

    We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

  16. The SAPPHIRE trial: investigations on angular deviation caused by refraction

    NASA Astrophysics Data System (ADS)

    Stein, Karin; Seiffer, Dirk

    2007-10-01

    The NATO Panel SET-088 TG-51 has the charter to investigate infrared research topics relating to Littoral Ship Self-Defence. The two main research areas for TG-51 are low-altitude maritime IR propagation phenomenology and ship signature properties. Atmospheric scintillation and refraction prediction models were validated in several trials conducted by different NATO groups. So far most trials were conducted in cold waters. In June 2006, TG 51 performed the SAPPHIRE trial (Ship and Atmospheric Propagation PHenomenon InfraRed Experiment) to collect data in littoral areas under conditions of warm sea temperatures. The location of the trial was the US Naval Research Laboratory's Chesapeake Bay Detachment (CBD) field site on Chesapeake Bay. The objectives of the trial were to validate ship signature models and scintillation/refraction models. In the SAPPHIRE trial, the purpose of FGAN-FOM was to investigate the influence of changing weather conditions on the apparent elevation of a target. Therefore, we set up an IR-camera at CBD overlooking Chesapeake Bay observing a set of lights installed on an Island in 16 km distance. In this paper we discuss and analyse the measured elevations and compare them to the propagation model IRBLEM (IR Boundary Layer Effects Model) by DRDC, Canada.

  17. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection.

    PubMed

    Joe, Daniel J; Hwang, Jeonghyun; Johnson, Christelle; Cha, Ho-Young; Lee, Jo-Won; Shen, Xiling; Spencer, Michael G; Tiwari, Sandip; Kim, Moonkyung

    2016-01-01

    Graphene has several unique physical, optical and electrical properties such as a two-dimensional (2D) planar structure, high optical transparency and high carrier mobility at room temperature. These make graphene interesting for electrical biosensing. Using a catalyst-free chemical vapor deposition (CVD) method, graphene film is grown on a sapphire substrate. There is a single or a few sheets as confirmed by Raman spectroscopy and atomic force microscopy (AFM). Electrical graphene biosensors are fabricated to detect large-sized biological analytes such as cancer cells. Human colorectal carcinoma cells are sensed by the resistance change of an active bio-functionalized graphene device as the cells are captured by the immobilized antibody surface. The functionalized sensors show an increase in resistance as large as ~20% of the baseline with a small number of adhered cells. This study suggests that the bio-functionalized electrical graphene sensors on sapphire, which is a highly transparent material, can potentially detect circulating tumor cells (CTCs) and monitor cellular electrical behavior while being compatible with fluorescence-based optical-detection bioassays. PMID:27398439

  18. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  19. Hole defects in the crystal structure of synthetic lipscombite (Fe{sub 4.7}{sup 3+}Fe{sub 2.3}{sup 2+})[PO{sub 4}]{sub 4}O{sub 2.7}(OH){sub 1.3} and genetic crystal chemistry of minerals of the lipscombite-barbosalite series

    SciTech Connect

    Yakubovich, O. V. Steele, I. M.; Rusakov, V. S.; Urusov, V. S.

    2006-05-15

    The crystal structure of a synthetic analog of the mineral lipscombite (Fe{sub 2.3}{sup 2+}Fe{sub 4.7}{sup 3+})[PO{sub 4}]{sub 4}O{sub 2.7}(OH){sub 1.3} obtained under hydrothermal conditions in the LiF-Fe{sub 2}O{sub 3}-(NH{sub 4}){sub 2}HPO{sub 4}-H{sub 2}O system is resolved (R = 0.040) by X-ray diffraction analysis (Bruker Smart diffractometer with a highly sensitive CCD detector, MoK{sub {alpha}} radiation): a = 14.776(3) A, b = 14.959(3) A, c = 7.394(1) A, {beta} = 119.188(4) deg., sp. gr. C2/c, Z = 4, {rho}{sub exp} = 3.8 g/cm{sup 3}, {rho}{sub calcd} = 3.9 g/cm{sup 3}. Fe{sup 2+} and Fe{sup 3+} cations are statistically distributed in each of four crystallographically independent positions, while occupying the corresponding octahedra with probabilities of 60, 90, 100, and 91%. The ratio Fe{sup 2+}/Fe{sup 3+} in the composition of the crystals was established by Moessbauer spectroscopy. Lipscombite is interpreted as a mineral of variable composition described by the formula (Fe{sub x}{sup 2+}Fe{sub n-x}{sup 3+})[PO{sub 4}]{sub 4}O{sub y}(OH){sub 4-y}. The field of stability is determined as a function of the iron content and the ratio Fe{sup 2+}/Fe{sup 3+}. It is shown that at n = 6 iron cations are ordered in octahedra and barbosalite structure is formed. An interpretation of genetically and structurally related members of the lipscombite family within a unified polysomatic series is proposed.

  20. [From synthetic biology to synthetic humankind].

    PubMed

    Nouvel, Pascal

    2015-01-01

    In this paper, we propose an historical survey of the expression "synthetic biology" in order to identify its main philosophical components. The result of the analysis is then used to investigate the meaning of the notion of "synthetic man". It is shown that both notions share a common philosophical background that can be summed up by the short but meaningful assertion: "biology is technology". The analysis allows us to distinguish two notions that are often confused in transhumanist literature: the notion of synthetic man and the notion of renewed man. The consequences of this crucial distinction are discussed. PMID:26238764

  1. Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE

    NASA Astrophysics Data System (ADS)

    Bouzidi, M.; Benzarti, Z.; Halidou, I.; Chine, Z.; Bchetnia, A.; El Jani, B.

    2015-08-01

    GaN films were grown on silicon nitride (SiN) treated c-plane sapphire substrates in a home-made vertical reactor by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). In order to obtain different thickness layers, the growth procedure was interrupted at diverse stages using in-situ laser reflectometry. The structural and optical properties of obtained samples were investigated by high resolution X-ray diffraction (HRXRD) and photoreflectance (PR). In the 0.7-2 μm epilayer thickness range, the dislocation density decreases and remains roughly constant above this range. For fully coalesced layers, PR measurements at 11 K reveal the presence of well resolved excitonic transitions related to A, B and C excitons. A strong correlation between dislocation density and exciton linewidths is observed. Based on theoretical approaches and experimental results, the electronic band structure modification of GaN films due to isotropic biaxial strain was investigated. The valence band deformation potentials D3 and D4, interband hydrostatic deformation potentials a1 and a2, spin-orbit Δso and crystal field Δcr parameters were re-examined and found to be 8.2 eV, -4.1 eV, -3.8 eV, -12 eV, 15.6 meV and 16.5 meV, respectively.

  2. Influence of defects and displacements in sapphire doped with Ag+ ions

    NASA Astrophysics Data System (ADS)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Zheng, Li-rong

    2015-12-01

    The Ag:Al2O3 composites are prepared by Ag+ ions implantation with the acceleration voltage of 35 kV. The formation of silver nanoparticle and the surface plasma resonance (SPR) effect are studied. The appearance of absorption bands demonstrates the formation of silver nanoparticles in Al2O3. Long-time sputtering due to the high fluency removes the surface layer, and the embedded Ag NPs appear on the surface though the majorities are in the deeper area. The fluorescence spectrum of Ag:Al2O3 evaluated by Gaussian fitting consists of three peaks: 365 nm, 403 nm and 471 nm. These bands should be attributed to defects produced by the matrix and embedded Ag+ ions. In addition, a strong peak at 693 nm is supposed to be R line for Al2O3 in the emission spectrum (VUV spectrum). The crystal structure and optical properties of ion implanted sapphire have been changed after ion implantation and it is analyzed by defects and displacements. Eventually, the SRIM program is used to simulate the growth of nanoparticles with four stages.

  3. Crystallization of free standing bulk GaN by HVPE

    NASA Astrophysics Data System (ADS)

    Ucznik, B.; Pastuszka, B.; Grzegory, I.; Bokowski, M.; Kamler, G.; Domagaa, J.; Nowak, G.; Prystawko, P.; Krukowski, S.; Porowski, S.

    2006-06-01

    Gallium nitride was crystallized on 2 inch MOVPE GaN/sapphire substrates by Hydride Vapor Phase Epitaxy. A stable growth has been achieved in long duration (>10 h) processes at growth rates bigger than 100 m/h. As a result, entirely transparent and colorless bulk crystals with thickness exceeding 2 mm were obtained. The cracks in the thick HVPE GaN layers deposited on the MOVPE GaN/sapphire substrates can appear especially during cooling of the system after crystallization. It is shown that the formation of cracks at cooling is dependent on the gradients in the layer thickness The relaxation of strains in the resulting crystal coupled to the substrate leads to the self separation of GaN from sapphire. (At present 30 x 30 x 2 mm free standing bulk GaN crystals are obtained). The GaN crystals are characterized by defect selective etching (DSE) and X-ray diffraction. The density of threading dislocations (measured by DSE of (0001) surface) decreases with the thickness of the HVPE layer and becomes lower than 107 cm-2 in the layers thicker than app. 1 mm. The X-ray rocking curves for (0002) reflection (slit 0.5 x 0.1 mm) are in the range of 80-95 arcsec. However, larger scans reveal bending of crystallographic {0001} planes. The behavior of these deformed free standing crystals used as substrates for HVPE re-growth is also analyzed.

  4. Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant

    NASA Astrophysics Data System (ADS)

    de Pablos-Martin, A.; Tismer, S.; Benndorf, G.; Mittag, M.; Lorenz, M.; Grundmann, M.; Höche, Th.

    2016-07-01

    Two sapphire substrates are tightly bonded through a BaTiAl6O12-glass thin film, by irradiation with a nanosecond laser. After the laser process, the composition of the glass sealant changes, due to incorporation of Al2O3 from the upper substrate. After annealing of the bonded samples (950 °C for 30 minutes) crystalline structures are observed by TEM which are attributed to crystalline BaTiAl6O12. These crystals together with Al2O3:Ti centers are the responsible of the observed strong blue luminescence of the laser irradiated region upon UV excitation. The structural and optical characterizations of the bonded samples clarify the laser soldering procedure as well as the origin of the luminescence. Bond quality and bond strength were evaluated by scanning acoustic microscopy (SAM) and tensile tests, which results in a tensile stress of nearly 13 MPa, which is an acceptable value for glass sealants.

  5. Purification of Al(OH)3 synthesized by Bayer process for preparation of high purity alumina as sapphire raw material

    NASA Astrophysics Data System (ADS)

    Park, No-Kuk; Choi, Hee-Young; Kim, Do-Hyeong; Lee, Tae Jin; Kang, Misook; Lee, Won Gun; Kim, Heun Duk; Park, Joon Woo

    2013-06-01

    To produce high purity alumina as the raw material for sapphire growth, gibbsite, which is the precursor for the synthesis of alumina, was synthesized by the Bayer process, and treated with an acid solution to remove the sodium component. In this study, the digestion process was carried out under the following conditions: an Al/Na ratio of 0.9 with a 5 N NaOH solution and a temperature of 140 °C. Bauxite containing 75 wt% alumina was converted to a sodium aluminate solution, and 60 wt% of the dissolved aluminate was crystallized to gibbsite. The sodium content in the gibbsite, which was measured by inductively coupled plasma/optical emission spectroscopy, was reduced by approximately 5700 ppm and below 2900 ppm after the water washing and acid treatments, respectively. The sodium content decreased with increasing acid concentration in the solution, temperature and acid treatment time.

  6. Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire

    NASA Astrophysics Data System (ADS)

    Golecki, I.; Kroko, L.; Glass, H. L.

    1987-09-01

    Buried layers of SiC were formed in (100) single-crystal bulk silicon and silicon-on-sapphire by ion implantation of 125 180 keV, (0.56-1.00) × 1018 C/cm2 at 30 40 μA/ cm2 into samples held at 450-650° C. The as-implanted and 950° C annealed samples were characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, x-ray diffraction, four-point probe measurements, Dektak profilometry, I-V measurements, spreading resistance measurements and secondary ion mass spectrometry.

  7. Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

    SciTech Connect

    Klad'ko, V. P.; Chornen'kii, S. V.; Naumov, A. V. Komarov, A. V.; Tacano, M.; Sveshnikov, Yu. N.; Vitusevich, S. A.; Belyaev, A. E.

    2006-09-15

    Overall characterization of the GaN and AlGaN/GaN epitaxial layers by X-ray diffractometry and optical spectral analysis is carried out. The layers are grown by metalloorganic gas-phase epitaxy on (0001)-oriented single crystal sapphire wafers. The components of strains and the density of dislocations are determined. The effects of strains and dislocations on the photoluminescence intensity and spectra are studied. The results allow better understanding of the nature and mechanisms of the formation of defects in the epitaxial AlGaN/GaN heterostructures.

  8. Response to “Comment on ‘Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate’ ” [J. Appl. Phys. 112, 016101 (2012)

    DOE PAGESBeta

    Zhao, X.; Philips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2012-07-01

    Welander is correct about the misidentified crystal-directions in the top-view sapphire lattice (Fig. 4 [Zhao et al., J. Appl. Phys. 110, 033523 (2011)]). He is also correct about the misorientation of the pole figures in Fig. 4. In Fig. 1 of this response, we have corrected these errors. Perhaps because of these errors, Welander misconstrued our discussion of the Nbcrystal growth as claiming a new 3D registry. That was not our intention. Rather, we wished to highlight the role of energetic condensation that drives low-defect crystal growth by a combination of non-equilibrium sub-plantation that disturbs the substrate lattice and thermalmore » annealing that annihilates defects and promotes large-grain crystal growth.« less

  9. High-temperature sapphire optical sensor fiber coatings

    NASA Astrophysics Data System (ADS)

    Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

    1990-10-01

    the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

  10. Hydrogen speciation in synthetic quartz

    USGS Publications Warehouse

    Aines, R.D.; Kirby, S.H.; Rossman, G.R.

    1984-01-01

    The dominant hydrogen impurity in synthetic quartz is molecular H2O. H-OH groups also occur, but there is no direct evidence for the hydrolysis of Si-O-Si bonds to yield Si-OH HO-Si groups. Molecular H2O concentrations in the synthetic quartz crystals studied range from less than 10 to 3,300 ppm (H/Si), and decrease smoothly by up to an order of magnitude with distance away from the seed. OH- concentrations range from 96 to 715 ppm, and rise smoothly with distance away from the seed by up to a factor of three. The observed OH- is probably all associated with cationic impurities, as in natural quartz. Molecular H2O is the dominant initial hydrogen impurity in weak quartz. The hydrolytic weakening of quartz may be caused by the transformation H2O + Si-O-Si ??? 2SiOH, but this may be a transitory change with the SiOH groups recombining to form H2O, and the average SiOH concentration remaining very low. Synthetic quartz is strengthened when the H2O is accumulated into fluid inclusions and cannot react with the quartz framework. ?? 1984 Springer-Verlag.

  11. Ion beam enhanced adhesion of iron films to sapphire substrates

    SciTech Connect

    Pawel, J.E.; Romana, L.J. ); McHargue, C.J. ); Wert, J.J. )

    1991-01-01

    The effect of implantation of different ion species on the adhesion of iron films to sapphire substrates has been investigated. The implantation energies were adjusted to ensure the ion concentration profiles, damage profiles, and recoil distributions were the same for each species. For all implantations, the peak ion concentration was at the film-substrate interface. The adhesion of the films was measured by pull test and a scratch test. For a fluence of 1 {times} 10{sup 15} ions-cm{sup {minus}2}, implantation of Cr (300 keV) and Fe (320 keV) increased the bond strength whereas implantation of Ni (340 keV) did not. The effect is proposed to be due to changes in the interfacial energy resulting from the presence of the ion species at the interface. Only a narrow zone is affected; the mixing at the interface is less than 10 nm. 24 refs., 3 figs.

  12. Laser surface and subsurface modification of sapphire using femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Eberle, G.; Schmidt, M.; Pude, F.; Wegener, K.

    2016-08-01

    Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  13. An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN

    NASA Astrophysics Data System (ADS)

    Moon, Daeyoung; Jang, Jeonghwan; Choi, Daehan; Shin, In-Su; Lee, Donghyun; Bae, Dukkyu; Park, Yongjo; Yoon, Euijoon

    2016-05-01

    An ultra-thin (26 nm) sapphire (Al2O3) membrane was used as a compliant substrate for the growth of high quality GaN. The density of misfit dislocations per unit length at the interface between the GaN layer and the sapphire membrane was reduced by 28% compared to GaN on the conventional sapphire substrate. Threading dislocation density in GaN on the sapphire membrane was measured to be 2.4×108/cm2, which is lower than that for GaN on the conventional sapphire substrate (3.2×108/cm2). XRD and micro-Raman results verifed that the residual stress in GaN on the sapphire membrane was as low as 0.02 GPa due to stress absorption by the ultra-thin compliant sapphire membrane.

  14. [The design of all solid-state tunable pulsed Ti:sapphire laser system].

    PubMed

    Chen, Zhe; Ku, Geng; Wan, Junchao; Wang, Wei; Zhou, Chuanqing

    2013-05-01

    This paper presented a design of broadly all solid-state tunable pulsed Ti:sapphire laser with high power and stable performance. The laser was pumped by custom-made Nd:YAG laser which had water cooling system and amplified by two stage amplifier. The method accomplished tunable output of all solid-state tunable pulsed Ti:sapphire laser by modifying the reflection angle of the back mirror. We investigated the relationship between the power of the pumping laser and the all solid-state tunable pulsed Ti: sapphire laser by changing the power of the pumping source. PMID:24015611

  15. Synthetic cathinone abuse

    PubMed Central

    Capriola, Michael

    2013-01-01

    The abuse of synthetic cathinones, widely known as bath salts, has been increasing since the mid-2000s. These substances are derivatives of the naturally occurring compound cathinone, which is the primary psychoactive component of khat. The toxicity of synthetic cathinones includes significant sympathomimetic effects, as well as psychosis, agitation, aggression, and sometimes violent and bizarre behavior. Mephedrone and methylenedioxypyrovalerone are currently the predominantly abused synthetic cathinones. PMID:23869180

  16. Evolvable synthetic neural system

    NASA Technical Reports Server (NTRS)

    Curtis, Steven A. (Inventor)

    2009-01-01

    An evolvable synthetic neural system includes an evolvable neural interface operably coupled to at least one neural basis function. Each neural basis function includes an evolvable neural interface operably coupled to a heuristic neural system to perform high-level functions and an autonomic neural system to perform low-level functions. In some embodiments, the evolvable synthetic neural system is operably coupled to one or more evolvable synthetic neural systems in a hierarchy.

  17. [SYNTHETIC PEPTIDE VACCINES].

    PubMed

    Sergeyev, O V; Barinsky, I F

    2016-01-01

    An update on the development and trials of synthetic peptide vaccines is reviewed. The review considers the successful examples of specific protection as a result of immunization with synthetic peptides using various protocols. The importance of conformation for the immunogenicity of the peptide is pointed out. An alternative strategy of the protection of the organism against the infection using synthetic peptides is suggested. PMID:27145593

  18. Characterizing synthetic gypsum

    SciTech Connect

    Henkels, P.J.; Gaynor, J.C.

    1996-10-01

    Each gypsum wallboard manufacturer has developed its own general guidelines for synthetic gypsum. The guidelines vary accordingly for each manufacturer and are often modified to suite a particular source and end use. In addition, the physical and chemical properties of synthetic gypsum are characterized by several proprietary and published test methods. Characterizing a synthetic gypsum and determining its acceptability is a time consuming process and can be confusing, particularly to those outside the gypsum wallboard industry. This paper describes some of the more important characteristics and practical aspects of synthetic gypsum usage based on USG`s extensive experience in wall board manufacture.

  19. Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

    NASA Astrophysics Data System (ADS)

    Yakovlev, V. A.; Novikova, N. N.; Vinogradov, E. A.; Ng, S. S.; Hassan, Z.; Hassan, H. A.

    2010-02-01

    Two thin aluminum nitride films have been prepared on sapphire substrates by molecular beam epitaxy technique. Then alkaline and acidic washing were used to remove the back-metal-coating of the sapphire substrate for one of the samples. (It caused also partial film dissolution). The surface polariton (SP) spectra have been measured by attenuated total reflection (ATR) technique. The measured SP dispersion is compared with one calculated using the literature film parameters. Due to the resonance interaction of sapphire substrate SP with the film transverse optical (TO) phonon the splitting of the dispersion curve of sapphire SP was found. The resonance takes place only for the frequency of the film TO phonon polarized along the surface of the anisotropic AlN film (perpendicular to the optical axis). The analysis of ATR and external reflectivity spectra shows the presence of some transition layer between the substrate and the film.

  20. Sapphire decomposition and inversion domains in N-polar aluminum nitride

    SciTech Connect

    Hussey, Lindsay White, Ryan M.; Kirste, Ronny; Bryan, Isaac; Guo, Wei; Osterman, Katherine; Haidet, Brian; Bryan, Zachary; Bobea, Milena; Collazo, Ramón; Sitar, Zlatko; Mita, Seiji

    2014-01-20

    Transmission electron microscopy (TEM) techniques and potassium hydroxide (KOH) etching confirmed that inversion domains in the N-polar AlN grown on c-plane sapphire were due to the decomposition of sapphire in the presence of hydrogen. The inversion domains were found to correspond to voids at the AlN and sapphire interface, and transmission electron microscopy results showed a V-shaped, columnar inversion domain with staggered domain boundary sidewalls. Voids were also observed in the simultaneously grown Al-polar AlN, however no inversion domains were present. The polarity of AlN grown above the decomposed regions of the sapphire substrate was confirmed to be Al-polar by KOH etching and TEM.

  1. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    NASA Astrophysics Data System (ADS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-01

    We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm-2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  2. The MSFC silicon gate silicon-on-sapphire standard cell library

    NASA Technical Reports Server (NTRS)

    1978-01-01

    A pictorial representation of the MSFC silicon-on-sapphire standard cell library is presented. The cells are intended to be used with the PR2D (Place, Route in 2 Dimensions) automatic layout computer program.

  3. Hydrogen defects in {alpha}-Al{sub 2}O{sub 3} and water weakening of sapphire and alumina ceramics between 600 and 1000 C -- 2. Mechanical properties

    SciTech Connect

    Castaing, J.; Kronenberg, A.K.; Kirby, S.H.; Mitchell, T.E.

    2000-04-19

    Hydrogen impurities in alumina have been introduced by hydrothermal annealing. In this paper, the authors report on reductions in the flow strength of {alpha}-Al{sub 2}O{sub 3} single crystals and polycrystals associated with hydrogen incorporation. Prior to deformation {alpha}-Al{sub 2}O{sub 3} single crystal and ceramic specimens were annealed in the presence of supercritical water at 850 or 900 C, under 1,500 MPa pressures. Sapphire and alumina ceramics were phastically deformed between 600 and 1,000 C under 1,500 MPa pressure, by the addition of a uniaxial stress. Flow stresses are reduced by a factor of two, due to the presence of water, for sapphire and large grain (30--50 {micro}n) oikycrystals, as a result of enhanced dislocation mobility. Flow stresses of fine-grained (3--5 {micro}m) polycrystals are reduced by water by a factor of six. This large reduction in strength is attributed to a change in mechanism from dislocation glide under dry conditions to grain boundary sliding under hydrothermal conditions.

  4. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    SciTech Connect

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E. Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V.; Babaev, V. A.; Ismailov, A. M.; Vovk, E. A.; Nizhankovsky, S. V.

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  5. Self-phase modulation of femtosecond pulses in hollow photonic-crystal fibres

    SciTech Connect

    Konorov, Stanislav O; Zheltikov, Aleksei M; Sidorov-Biryukov, D A; Bugar, I; Chorvat, D J; Beloglazov, V I; Skibina, N B; Shcherbakov, Andrei V; Chorvat, D; Mel'nikov, L A

    2004-01-31

    Self-phase modulation of femtosecond laser pulses in hollow-core photonic-crystal fibres is experimentally studied. Photonic-crystal fibres allowing single-mode waveguide regimes of nonlinear-optical interactions to be implemented with maximum transmission for 800-nm femtosecond pulses are designed and fabricated. A radical enhancement of self-phase modulation is demonstrated for submicrojoule femtosecond pulses of Ti:sapphire-laser radiation propagating through hollow photonic-crystal fibres. (optical fibres)

  6. CW STED nanoscopy with a Ti:Sapphire oscillator

    NASA Astrophysics Data System (ADS)

    Liu, Yujia; Xie, Hao; Alonas, Eric; Santangelo, Philip J.; Jin, Dayong; Xi, Peng

    2012-12-01

    Fluorescence microscopy has become an essential tool to study biological molecules, pathways and events in living cells, tissues and animals. Meanwhile, the conventional optical microscopy is limited by the wavelength of the light. Even the most advanced confocal microscopy or multiphoton microscopy can only yield optical resolution approaching the diffraction limit of ~200 nm. This is still larger than many subcellular structures, which are too small to be resolved in detail. These limitations have driven the development of super-resolution optical imaging methodologies over the past decade. The stimulated emission depletion (STED) microscopy was the first and most direct approach to overcoming the diffraction limit for far-field nanoscopy. Typically, the excitation focus is overlapped by an intense doughnut-shaped spot to instantly de-excite markers from their fluorescent state to the ground state by stimulated emission. This effectively eliminates the periphery of the Point Spread Function (PSF), resulting in a narrower focal region, or super-resolution. Scanning a sharpened spot through the specimen renders images with sub-diffraction resolution. Multi-color STED imaging can present important structural and functional information for protein-protein interaction. In this work, we presented a dual color, synchronization-free STED stimulated emission depletion (STED) microscopy with a Ti:Sapphire oscillator. The excitation wavelengths were 532nm and 635nm, respectively. With pump power of 4.6 W and sample irradiance of 310 mW, we achieved super-resolution as high as 71 nm. We also imaged 200 nm nanospheres as well as all three cytoskeletal elements (microtubules, intermediate filaments, and actin filaments), clearly demonstrating the super-resolution resolving power over conventional diffraction limited imaging. It also allowed us to discover that, Dylight 650, exhibits improved performance over ATTO647N, a fluorophore frequently used in STED. Furthermore, we

  7. Cellular and humoral antibody responses of normal pastel and sapphire mink to goat erythrocytes.

    PubMed

    Lodmell, D L; Bergman, R K; Hadlow, W J; Munoz, J J

    1971-02-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 10(6) cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE. PMID:16557957

  8. Feasibility for non-destructive discrimination of natural and beryllium-diffused sapphires using Raman spectroscopy.

    PubMed

    Chang, Kyeol; Lee, Sanguk; Park, Jimin; Chung, Hoeil

    2016-03-01

    Raman spectroscopy based non-destructive discrimination between natural and beryllium-diffused (Be-diffused) sapphires has been attempted. The initial examination of Raman image acquired on a sapphire revealed that microscopic structural and compositional heterogeneity was apparent in the sample, so acquisition of spectra able to represent a whole body of sapphire rather than a localized area was necessary for a reliable discrimination. For this purpose, a wide area illumination (WAI) scheme (illumination area: 28.3mm(2)) providing a large sampling volume was employed to collect representative Raman spectra of sapphires. Upon the diffusion of Be into a sapphire, the band shift originated from varied lattice structure by substitution of Be at cation sites was observed and utilized as a valuable spectral signature for the discrimination. In the domain of principal component (PC) scores, the groups of natural and Be-diffused sapphires were identifiable with minor overlapping and the cross-validated discrimination error was 7.3% when k-Nearest Neighbor (k-NN) was used as a classifier. PMID:26717849

  9. Wafer-scale highly-transparent and superhydrophilic sapphires for high-performance optics.

    PubMed

    Leem, Jung Woo; Yu, Jae Su

    2012-11-19

    We reported the wafer-scale highly-transparent and superhydrophilic sapphires with antireflective subwavelength structures (SWSs) which were fabricated by dry etching using thermally dewetted gold (Au) nanomasks. Their optical transmittance properties were experimentally and theoretically investigated. The density, size, and period of the thermally dewetted Au nanopatterns can be controlled by the Au film thickness. For the sapphire with both-side SWSs at 5 nm of Au film, the average total transmittance (T(avg)) of ~96.5% at 350-800 nm was obtained, indicating a higher value than those of the flat sapphire (T(avg)~85.6%) and the sapphire with one-side SWSs (T(avg)~91%), and the less angle-dependent transmittance property was observed. The calculated transmittance results also showed a similar tendency to the measured data. The SWSs enhanced significantly the surface hydrophilicity of sapphires, exhibiting a water contact angle (θ(c)) of < 5° for Au film of 5 nm compared to θ(c)~37° of the flat sapphire. PMID:23187471

  10. Cellular and Humoral Antibody Responses of Normal Pastel and Sapphire Mink to Goat Erythrocytes

    PubMed Central

    Lodmell, D. L.; Bergman, R. K.; Hadlow, W. J.; Munoz, J. J.

    1971-01-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 106 cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE. PMID:16557957

  11. Wetting and reaction promoted by ultrasound between sapphire and liquid Al-12Si alloy.

    PubMed

    Cui, Wei; Wang, Changwen; Yan, Jiuchun; Wang, Zhipeng; Wei, Daqing

    2013-01-01

    Ultrasonic-assisted wetting between sapphire bulks and liquid Al-12Si alloy in an atmospheric environment at 620 °C is carried out in this study. Complete, rather than partial, wetting and joining can be achieved with the aid of ultrasound. Growth of epitaxial alumina on sapphire bulks is promoted dramatically during ultrasonic-assisted wetting comparing to that during hot-dipping without ultrasound. XRD results show that the epitaxial alumina is non-crystalline. This indicates that the temperature on the surface of the sapphire substrate is not more than 1200 °C even though the collapse of acoustic cavitation bubbles could theoretically produce extremely high temperature. The bonding force at the interface between the Al-Si alloy and sapphire is strengthened because of the epitaxial alumina. The interfacial shear strength of sapphire/Al-Si alloy can reach as high as 60-65 MPa. The fracture morphology shows that cracks initiated at the interface between Si grains and the epitaxial alumina on sapphire. This result is especially useful for the joining of metals and ceramics. PMID:22929927

  12. Designing synthetic biology.

    PubMed

    Agapakis, Christina M

    2014-03-21

    Synthetic biology is frequently defined as the application of engineering design principles to biology. Such principles are intended to streamline the practice of biological engineering, to shorten the time required to design, build, and test synthetic gene networks. This streamlining of iterative design cycles can facilitate the future construction of biological systems for a range of applications in the production of fuels, foods, materials, and medicines. The promise of these potential applications as well as the emphasis on design has prompted critical reflection on synthetic biology from design theorists and practicing designers from many fields, who can bring valuable perspectives to the discipline. While interdisciplinary connections between biologists and engineers have built synthetic biology via the science and the technology of biology, interdisciplinary collaboration with artists, designers, and social theorists can provide insight on the connections between technology and society. Such collaborations can open up new avenues and new principles for research and design, as well as shed new light on the challenging context-dependence-both biological and social-that face living technologies at many scales. This review is inspired by the session titled "Design and Synthetic Biology: Connecting People and Technology" at Synthetic Biology 6.0 and covers a range of literature on design practice in synthetic biology and beyond. Critical engagement with how design is used to shape the discipline opens up new possibilities for how we might design the future of synthetic biology. PMID:24156739

  13. Synthetic facial implants.

    PubMed

    Quatela, Vito C; Chow, Jen

    2008-02-01

    This article presents a range of synthetic implant materials for use in facial plastic surgery. The authors discuss alternatives to autogenous tissue transfer in terms of biocompatibility, technique, complications, controversies, and cautions. The reader is presented information about a range of synthetic implant materials such as silicone, polyester fiber, polyamide mesh, metal, polyethylene, polyacrylamide gel, hydroxyapatite, polylactic acid, collagen, and others. PMID:18063244

  14. Compact cryogenically cooled Ti:Sapphire dual multi-kilohertz amplifiers for synchrotron radiation ultra-fast x-ray applications

    SciTech Connect

    Feng, J.; Nasiatka, J.; Hertlein, M.; Rude, B.; Padmore, H.

    2013-05-15

    A titanium-doped sapphire regenerative dual-amplifier array operating at multi-kHz repetition rates has been developed for synchrotron radiation ultra-fast x-ray applications. The thermal lensing of the crystal in the amplifiers is virtually eliminated by cryogenic cooling of the laser crystal. The output energy of the amplifiers is measured to be greater than 2.6 mJ and the pulse length was compressed to less than 70 fs. The output laser mode is a near perfect Gaussian TEM00 with an M{sup 2} factor of 1.02. The performance of the amplifier system is in excellent agreement with theoretical calculation.

  15. Phase behavior and crystal structure of 3-(1-naphthyloxy)- and 3-(4-indolyloxy)-propane-1,2-diol, synthetic precursors of chiral drugs propranolol and pindolol

    NASA Astrophysics Data System (ADS)

    Bredikhin, Alexander A.; Gubaidullin, Aidar T.; Bredikhina, Zemfira A.; Fayzullin, Robert R.; Samigullina, Aida I.; Zakharychev, Dmitry V.

    2013-08-01

    Valuable precursors of popular chiral drugs propranolol and pindolol, 3-(1-naphthyloxy)-propane-1,2-diol 3 and 3-(4-indolyloxy)-propane-1,2-diol 4 were investigated by IR spectroscopy, DSC, and X-ray diffraction methods. Both compounds, crystallizing from enantiopure feed material, form "guaifenesin-like" crystal packing in which the classic H-bonded bilayers, framed in both sides by hydrophobic fragments of the molecules, acts as the basic crystal-forming motif. Diol 4 prone to spontaneous resolution and conserves its packing pattern crystallizing from racemate. Under the same conditions, diol 3 forms weakly stable solid racemic compound. Some reasons for such a behavior are identified and discussed.

  16. Ion beam mixing of Fe with sapphire and silica

    SciTech Connect

    Sinha, S. K.; Vigen, K. M.; Kothari, D. C.; Som, T.; Kulkarni, V. N.; Nair, K. G. M.

    1999-06-10

    We have studied ion beam mixing of Fe with sapphire, silica, Al and Si using different mass of the ions (Ne{sup +},Ar{sup +}), different doses (5x10{sup 15} to 2x10{sup 17} ions/cm{sup 2}) and different temperatures (273 deg. K, 423 deg. K and 573 deg. K). Thin film of Fe was deposited by thermal evaporation method. Ion energy was chosen from 30 to 110 keV so that F{sub d} is maximum at the interface. All the specimens were analyzed by RBS. It is found that the square of the diffusion length Dt is proportional to the ion dose for both types of the substrates (Al{sub 2}O{sub 3} and SiO{sub 2}) implying that mixing is due to the ballistic effect (i.e. cascade mixing). Also mixing is more when irradiated by Ar{sup +} ions than Ne{sup +} ions. Comparison of Dt's shows that mixing is less in ceramics than in pure-elements Al and Si. In Fe-Al{sub 2}O{sub 3} samples, mixing decreases with increase in irradiation temperatures implying de-mixing in crystalline ionic bonded oxide whereas mixing increases in the covalently bonded oxide SiO{sub 2}. Irradiated annealed samples of Fe/Al{sub 2}O{sub 3} and Fe/SiO{sub 2} show de-mixing and mixing respectively.

  17. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    NASA Astrophysics Data System (ADS)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  18. Optical properties of sapphire in its opacity range

    NASA Astrophysics Data System (ADS)

    Rogalin, V. E.; Kaplunov, I. A.; Tsenina, I. S.; Andreeva, M. S.; Filin, S. A.

    2016-06-01

    We have studied the reflection spectrum of leucosapphire in the range of 2.5-25.0 μm. Based on the analysis of the known frequency and temperature dependences of the absorption coefficient in the range of 2.5-7.0 μm, its extrapolation to the range of 10.6 μm has been performed. We have shown that the absorption coefficient in the range of 10.6 μm and in the temperature interval 300-2300 K can be evaluated as β = (2-3) × 104 cm-1. It has also been shown that the value of this characteristic correlates with the results of investigations of the action of a powerful radiation pulse of a CO2 laser on the surface of anodized aluminum. These data can be used in the development of technologies of laser processing of articles made of sapphire and ceramics based on aluminum oxide, as well as anodized articles made of aluminum alloys.

  19. Generating multiple wavelengths, simultaneously, in a Ti:sapphire ring laser with a ramp-hold-fire seeding technique

    NASA Astrophysics Data System (ADS)

    Moore, Thomas Z.; Anderson, F. Scott

    2012-03-01

    The ability to simultaneously produce pulsed laser output over multiple discrete wavelengths can mitigate many of the timing and jitter issues associated with the use of multiple laser systems. In addition, Fourier-transform limited laser output on every pulse is required for many applications such as with pump-probe detection, non-linear frequency mixing, differential absorption lidar (DIAL), and resonance ionization. As a matter of practice, such lasers need to be capable of operating within uncontrolled or noisy environments. We report on a novel Ti:sapphire ring laser that has been developed to produce Fourier-transform limited 20-ns laser pulses at multiple discrete wavelengths, simultaneously, utilizing a Ramp-Hold-Fire (RHF) seeding technique. Resonance of the seed light is achieved by using a KD*P crystal to modify the phase of the light circulating within the slave oscillator cavity where the fast response of the crystal results in a seeding technique that is immune to noise throughout the acoustic regime.

  20. Building synthetic memory

    PubMed Central

    Inniss, Mara C.; Silver, Pamela A.

    2013-01-01

    Synopsis Cellular memory – conversion of a transient signal into a sustained response – is a common feature of biological systems. Synthetic biologists aim to understand and reengineer such systems in a reliable and predictable manner. Synthetic memory circuits have been designed and built in vitro and in vivo based on diverse mechanisms such as oligonucleotide hybridization, recombination, transcription, phosphorylation, and RNA editing. Thus far, building these circuits has helped us explore the basic principles required for stable memory and ask novel biological questions. Here we discuss strategies for building synthetic memory circuits, their use as research tools, and future applications of these devices in medicine and industry. PMID:24028965

  1. Building synthetic memory.

    PubMed

    Inniss, Mara C; Silver, Pamela A

    2013-09-01

    Cellular memory - conversion of a transient signal into a sustained response - is a common feature of biological systems. Synthetic biologists aim to understand and re-engineer such systems in a reliable and predictable manner. Synthetic memory circuits have been designed and built in vitro and in vivo based on diverse mechanisms, such as oligonucleotide hybridization, recombination, transcription, phosphorylation, and RNA editing. Thus far, building these circuits has helped us explore the basic principles required for stable memory and ask novel biological questions. Here we discuss strategies for building synthetic memory circuits, their use as research tools, and future applications of these devices in medicine and industry. PMID:24028965

  2. Synthetic Base Fluids

    NASA Astrophysics Data System (ADS)

    Brown, M.; Fotheringham, J. D.; Hoyes, T. J.; Mortier, R. M.; Orszulik, S. T.; Randles, S. J.; Stroud, P. M.

    The chemical nature and technology of the main synthetic lubricant base fluids is described, covering polyalphaolefins, alkylated aromatics, gas-to-liquid (GTL) base fluids, polybutenes, aliphatic diesters, polyolesters, polyalkylene glycols or PAGs and phosphate esters.Other synthetic lubricant base oils such as the silicones, borate esters, perfluoroethers and polyphenylene ethers are considered to have restricted applications due to either high cost or performance limitations and are not considered here.Each of the main synthetic base fluids is described for their chemical and physical properties, manufacture and production, their chemistry, key properties, applications and their implications when used in the environment.

  3. Optical characterization of synthetic faceted gem materials grown from hydrothermal solutions

    NASA Astrophysics Data System (ADS)

    Lu, Taijin; Shigley, James E.

    1998-10-01

    Various non-destructive optical characterization techniques have been used to characterize and identify synthetic gem materials grown from hydrothermal solutions, to include ruby, sapphire, emerald, amethyst and ametrine (amethyst-citrine), from their natural counterparts. The ability to observe internal features, such as inclusions, dislocations, twins, color bands, and growth zoning in gem materials is strongly dependent on the observation techniques and conditions, since faceted gemstones have many polished surfaces which can reflect and scatter light in various directions which can make observation difficult. However, diagnostic gemological properties of these faceted synthetic gem materials can be obtained by choosing effective optical characterization methods, and by modifying optical instruments. Examples of some of the distinctive features of synthetic amethyst, ametrine, pink quartz, ruby and emerald are presented to illustrate means of optical characterization of gemstones. The ability to observe defects by light scattering techniques is discussed.

  4. Study of the environmental and optical durability of AR microstructures in sapphire, ALON, and diamond

    NASA Astrophysics Data System (ADS)

    Hobbs, Douglas S.

    2009-05-01

    Data is presented for the erosion resistance and pulsed laser damage threshold of anti-reflecting (AR) microstructures built in the surface of the infrared light transmitting window materials sapphire, ALON, and diamond. It was found that the erosion resistance of AR microstructures (ARMs) in sapphire is comparable to the resistance of sapphire with no AR treatment. Such environmental durability, combined with the enhanced light transmission of windows incorporating ARMs, provides system designers with an effective solution for applications requiring high transmission over long mission times operating in abrasive environments. In addition, the optical power handling capacity of sapphire and ALON windows was investigated through pulsed laser damage threshold measurements with a laser source operating in the near infrared at a wavelength of 1573nm. As with prior results reported for ARMs in fused silica and borosilicate glass, the measured damage threshold of 19 J/cm2 for ARMs treated sapphire windows is comparable to the damage level measured for untreated sapphire windows, and this level is at least two times higher than that found with the most durable thin-film AR coatings designed for fused silica. The damage thresholds measured for untreated and ARMs treated ALON windows was also comparable, but at a level more than four times less than the sapphire windows. Lastly, the long-wave infrared light transmission of high performance ARMs fabricated in clear diamond windows is presented. The Air Force Research Laboratoy's Laser Hardened Materials Evaluation Laboratory at WPAFB tested the damage threshold of the ARMs treated diamond windows along with untreated diamond windows using their pulsed CO2 laser setup operating at 9.56μm. Although the results of the tests using two different laser settings were quite variable and inconsistent due to the nature of the diamond material, the damage thresholds measured were in the 50 to 100 J/cm2 range, a level much higher than

  5. Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs

    NASA Astrophysics Data System (ADS)

    Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Sinitsyn, M. A.; Nikolaev, A. E.; Lundina, E. Yu.; Tsatsulnikov, A. F.

    2008-11-01

    We report a method of profiled sapphire substrate preparation and growth of InGaAlN light-emitting diode (LED) structures over these substrates. Sapphire substrates with textured front surface were prepared by the simple method of nanoscale gold drops formation on sapphire surface followed by etching in hot H 3PO 4 acid. Comparison of blue LEDs grown on standard (flat) and profiled sapphire substrates in one epitaxial process shows significant increase in output power due to increased light extraction without deterioration of other LED characteristics.

  6. Effect of heating conditions on flow patterns during the seeding stage of Kyropoulos sapphire crystal growth

    NASA Astrophysics Data System (ADS)

    Timofeev, Vladimir V.; Kalaev, Vladimir V.; Ivanov, Vadim G.

    2016-07-01

    We apply numerical simulation to understand the effect of heating conditions on melt convection in an industrial Ky furnace. The direct numerical simulation (DNS) approach was used to investigate the features of melt flow during the seeding stage. Two different cases of Kyropoulos furnace hot zone design were studied numerically, and results were compared with experimental data to understand the effect of modifications on melt convection.

  7. Single-Crystal Sapphire High-Temperature Measurement Instrument for Coal Gasification

    NASA Astrophysics Data System (ADS)

    Zhang, Yibing; Pickrell, Gary; Qi, Bing; May, Russell G.; Wang, Anbo

    2003-09-01

    Based on the broadband polarimetric differential interferometry (BPDI) technology, a complete prototype optical sensor instrumentation system was designed and implemented for on-line reliable and accurate high temperature measurement in a slagging coal gasifier, which operates under high temperatures and extremely corrosive conditions. A wide dynamic measurement range from room temperature up to 1600 °C with a resolution better than 0.1 °C and high accuracy is achieved; long-term operating stability has also been tested.

  8. What Are Synthetic Cannabinoids?

    MedlinePlus

    ... those produced by marijuana: elevated mood relaxation altered perception —awareness of surrounding objects and conditions symptoms of ... those produced by marijuana: elevated mood relaxation altered perception symptoms of psychosis Synthetic cannabinoids can also cause ...

  9. Analysis of Synthetic Polymers.

    ERIC Educational Resources Information Center

    Smith, Charles G.; And Others

    1989-01-01

    Reviews techniques for the characterization and analysis of synthetic polymers, copolymers, and blends. Includes techniques for structure determination, separation, and quantitation of additives and residual monomers; determination of molecular weight; and the study of thermal properties including degradation mechanisms. (MVL)

  10. Models for synthetic biology

    PubMed Central

    Kaznessis, Yiannis N

    2007-01-01

    Synthetic biological engineering is emerging from biology as a distinct discipline based on quantification. The technologies propelling synthetic biology are not new, nor is the concept of designing novel biological molecules. What is new is the emphasis on system behavior. The objective is the design and construction of new biological devices and systems to deliver useful applications. Numerous synthetic gene circuits have been created in the past decade, including bistable switches, oscillators, and logic gates, and possible applications abound, including biofuels, detectors for biochemical and chemical weapons, disease diagnosis, and gene therapies. More than fifty years after the discovery of the molecular structure of DNA, molecular biology is mature enough for real quantification that is useful for biological engineering applications, similar to the revolution in modeling in chemistry in the 1950s. With the excitement that synthetic biology is generating, the engineering and biological science communities appear remarkably willing to cross disciplinary boundaries toward a common goal. PMID:17986347

  11. Synthetic microbial communities☆

    PubMed Central

    Großkopf, Tobias; Soyer, Orkun S

    2014-01-01

    While natural microbial communities are composed of a mix of microbes with often unknown functions, the construction of synthetic microbial communities allows for the generation of defined systems with reduced complexity. Used in a top-down approach, synthetic communities serve as model systems to ask questions about the performance and stability of microbial communities. In a second, bottom-up approach, synthetic microbial communities are used to study which conditions are necessary to generate interaction patterns like symbiosis or competition, and how higher order community structure can emerge from these. Besides their obvious value as model systems to understand the structure, function and evolution of microbial communities as complex dynamical systems, synthetic communities can also open up new avenues for biotechnological applications. PMID:24632350

  12. Atomic Resolution of Calcium and Oxygen Sublattices of Calcite in Ambient Conditions by Atomic Force Microscopy Using qPlus Sensors with Sapphire Tips.

    PubMed

    Wastl, Daniel S; Judmann, Michael; Weymouth, Alfred J; Giessibl, Franz J

    2015-01-01

    Characterization and imaging at the atomic scale with atomic force microscopy in biocompatible environments is an ongoing challenge. We demonstrate atomically resolved imaging of the calcite (101̅4) surface plane using stiff quartz cantilevers ("qPlus sensors", stiffness k = 1280 N/m) equipped with sapphire tips in ambient conditions without any surface preparation. With 10 atoms in one surface unit cell, calcite has a highly complex surface structure comprising three different chemical elements (Ca, C, and O). We obtain true atomic resolution of calcite in air at relative humidity ranging from 20% to 40%, imaging atomic steps and single atomic defects. We observe a great durability of sapphire tips with their Mohs hardness of 9, only one step below diamond. Depending on the state of the sapphire tip, we resolve either the calcium or the oxygen sublattice. We determine the tip termination by comparing the experimental images with simulations and discuss the possibility of chemical tip identification in air. The main challenges for imaging arise from the presence of water layers, which form on almost all surfaces and have the potential to dissolve the crystal surface. Frequency shift versus distance spectra show the presence of at least three ordered hydration layers. The measured height of the first hydration layer corresponds well to X-ray diffraction data and molecular dynamic simulations, namely, ∼220 pm. For the following hydration layers we measure ∼380 pm for the second and third layer, ending up in a total hydration layer thickness of at least 1 nm. Understanding the influence of water layers and their structure is important for surface segregation, surface reactions including reconstructions, healing of defects, and corrosion. PMID:25816927

  13. Synthetic biology and biosecurity.

    PubMed

    Robienski, Jürgen; Simon, Jürgen

    2014-01-01

    This article discusses the conflict fields and legal questions of synthetic biology, esp. concerning biosecurity. A respective jurisprudential discussion has not taken place yet in Germany apart from few statements and recommendations. But in Germany, Europe and the USA, it is generally accepted that a broad discussion is necessary. This is esp. true for the question of biosecurity and the possible dangers arising from Synthetic Biology. PMID:25845204

  14. Synthetic Vision Systems

    NASA Technical Reports Server (NTRS)

    Prinzel, L.J.; Kramer, L.J.

    2009-01-01

    A synthetic vision system is an aircraft cockpit display technology that presents the visual environment external to the aircraft using computer-generated imagery in a manner analogous to how it would appear to the pilot if forward visibility were not restricted. The purpose of this chapter is to review the state of synthetic vision systems, and discuss selected human factors issues that should be considered when designing such displays.

  15. Active synthetic soil

    NASA Technical Reports Server (NTRS)

    Ming, Douglas W. (Inventor); Henninger, Donald L. (Inventor); Allen, Earl R. (Inventor); Golden, Dadigamuwage C. (Inventor)

    1995-01-01

    A synthetic soil/fertilizer for horticultural application having all the agronutrients essential for plant growth is disclosed. The soil comprises a synthetic apatite fertilizer having sulfur, magnesium and micronutrients dispersed in a calcium phosphate matrix, a zeolite cation exchange medium saturated with a charge of potassium and nitrogen cations, and an optional pH buffer. Moisture dissolves the apatite and mobilizes the nutrient elements from the apatite matrix and the zeolite charge sites.

  16. Active synthetic soil

    NASA Technical Reports Server (NTRS)

    Ming, Douglas W. (Inventor); Henninger, Donald L. (Inventor); Allen, Earl R. (Inventor); Golden, Dadigamuwage C. (Inventor)

    1995-01-01

    A synthetic soil/fertilizer for horticultural application having all the agronutrients essential for plant growth is disclosed. The soil comprises a synthetic apatite fertilizer having sulfur, magnesium, and micronutrients dispersed in a calcium phosphate matrix, a zeolite cation exchange medium saturated with a charge of potassium and nitrogen cations, and an optional pH buffer. Moisture dissolves the apatite and mobilizes the nutrient elements from the apatite matrix and the zeolite charge sites.

  17. Overview of the Sapphire payload for space surveillance

    NASA Astrophysics Data System (ADS)

    Hackett, J.; Brisby, R.; Smith, K.

    2012-06-01

    This paper provides an overview of the satellite based Sapphire Payload developed by COM DEV to be used for observing Resident Space Objects (RSOs) from low earth orbit by the Canadian Department of National Defence. The data from this operational mission will be provided to the US Space Surveillance Network as an international contribution to assist with RSO precision positional determination. The payload consists of two modules; an all reflective visible-band telescope housed with a low noise preamplifier/focal plane, and an electronics module that contains primary and redundant electronics. The telescope forms a low distortion image on two CCDs adjacent to each other in the focal plane, creating a primary image and a redundant image that are offset spatially. This combination of high-efficiency low-noise CCDs with well-proven high-throughput optics provides a very sensitive system with low risk and cost. Stray light is well controlled to allow for observations of very faint objects within the vicinity of the bright Earth limb. Thermally induced aberrations are minimized through the use of an all aluminum construction and the strategic use of thermal coatings. The payload will acquire a series of images for each target and perform onboard image pre-processing to minimize the downlink requirements. Internal calibration sources will be used periodically to check for health of the payload and to identify, and possibly correct, any pixels with an aberrant response. This paper also provides a summary of the testing that was performed and the results achieved.

  18. Chirped-Pulse Amplification with flashlamp-pumped Ti:Sapphire amplifiers. Revision 1

    SciTech Connect

    Bonlie, J.D.; White, W.E.; Price, D.F.; Reitze, D.H.

    1994-01-01

    Ti:Sapphire (Ti:Al{sub 2}O{sub 3}) amplifier stages are typically pumped with Q-switched Nd:YAG lasers doubled to 532 nm because of good spectral overlap, short temporal width, high repetition rate (i.e., 10 Hz to > 5 kHz) and the problems associated with flashlamp pumping a material with a relatively short upper state lifetime. Limitations to this pumping method arise due to the 1 to 1.5 joule/pulse ceiling found in most commercial high rep rate Nd:YAG lasers. The availability of high quality, large aperture Ti:Sapphire rods has made the flashlamp-pumping scheme an attractive option. The excellent thermal properties of Ti:Sapphire also allows an amplifier to be operated at high repetition rates. The front end of our laser relies on Chirped Pulse Amplification (CPA) in laser pumped Ti:Sapphire to generate 55 mJ, 90 fsec pulses at a 10 Hz rate. We report the use of a flashlamp pumped Ti:Sapphire head to further amplify the output of our system, producing 90 fsec, 250 mJ pulses at 5 Hz. The excellent output spatial profile yields a near diffraction-limited 5 {mu}m spot size and peak irradiance in excess of 5 {times} 10{sup 18} W/cm{sup 2}.

  19. Chirped-Pulse Amplification with flashlamp-pumped Ti:Sapphire amplifiers

    SciTech Connect

    Bonlie, J.D.; White, W.E.; Price, D.F.; Reitze, D.H.

    1994-01-01

    Ti:Sapphire (Ti:Al{sub 2}O{sub 3}) amplifier stages are typically pumped with Q-switched Nd:YAG lasers doubled to 532 nm because of good spectral overlap, short temporal width, high repetition rate (i.e., 10 Hz to > 5 kHz) and the problems associated with flashlamp pumping a material with a relatively short upper state lifetime. Limitations to this pumping method arise due to the 1 to 1.5 joule/pulse ceiling found in most commercial high rep rate Nd:YAG lasers. The availability of high quality, large aperture Ti:Sapphire rods has made the flashlamp-pumping scheme an attractive option. The excellent thermal properties of Ti:Sapphire also allows an amplifier to be operated at high repetition rates. The front end of our laser relies on Chirped Pulse Amplification (CPA) in laser pumped Ti:Sapphire to generate 55 NJ, 90 fsec pulses at a 10 Hz rate. We report the use of a flashlamp pumped Ti:Sapphire head to further amplify the output of our system, producing 90 fsec, 250 NJ pulses at 5 Hz. The excellent output spatial profile yields a near diffraction-limited 5 {mu}m spot size and peak irradiance in excess of 5 {times} 10{sup 18} W/cm{sup 2}.

  20. Highly transparent sapphire micro-grating structures with large diffuse light scattering

    NASA Astrophysics Data System (ADS)

    Ko, Yeong Hwan; Yu, Jae Su

    2011-08-01

    The highly transparent micro-grating structures (MGSs) of sapphire substrate with large diffuse light scattering were theoretically and experimentally studied. From the finite difference time domain simulation, it was found that the degree of diffuse light scattering is strongly dependent on the size of grating structures. For a highly transparent property, the sapphire MGSs were optimally designed by the theoretical calculations using the rigorous coupled wave analysis method. The order of taper, geometry (i.e., width and height), and pitch length of MGSs were optimized to maximize their average total transmittance over a wide wavelength range of 300-1800 nm. Additionally, the influence of the deposition of low-refractive index material such as SiO2 onto sapphire MGSs on the transmittance characteristics was investigated. To verify experimentally the feasibility, the sapphire MGSs were fabricated by the conventional lithography and dry etching processes. The SiO2 deposited sapphire MGS exhibited a further increase in the total transmittance due to its relatively more graded refractive index profile while maintaining a significantly enhanced diffuse light scattering. The experimental data were in a reasonable agreement with the theoretical results.

  1. The Mechanical Properties of Alumina Films Formed by Plasma Deposition and by Ion Irradiation of Sapphire

    SciTech Connect

    Barbour, J.C.; Follstaedt, D.M.; Knapp, J.A.; Linam, D.L.; Mayer, T.M.; Minor, K.G.

    1999-07-16

    This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and exhibit superior mechanical properties in comparison to the deposited alumina films. Density was determined to be the primary factor affecting the mechanical properties, which showed only a weak correlation to the hydrogen content.

  2. Structure-property correlation in epitaxial (2 0 0) rutile films on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Bayati, M. R.; Joshi, Sh.; Molaei, R.; Narayan, R. J.; Narayan, J.

    2012-03-01

    We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using φ-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 -1 0), and rutile(0 1 0)||sapphire(1 -2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV-VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation.

  3. Absorption and fluorescence of alexandrite and of titanium in sapphire and glass

    NASA Technical Reports Server (NTRS)

    Byvik, C. E.; Hess, R. V.; Buoncristiani, A. M.

    1985-01-01

    The fluorescence and absorption data for titanium in crystalline sapphire and titanium doped into two silicate and one phosphate glass structures are analyzed. It is observed that the Ti-doped silicate glass sample exhibits no absorption related to the Ti(III) ion, the Ti-doped phosphate glass is deep blue, the absorption line width of the glass samples are a factor of two larger than that of sapphire, and the absorption peak for the Ti in the glass shifted about 100 nm to the red from the Ti:sapphire absorption peak. This shift reveals that the Ti(III) ion is sensitive to the crystalline environment and not to the glass environment. The photoluminescence spectra for Ti-doped sapphire and alexandrite are compared. It is detected that the Ti:sapphire exhibits a broader spectrum than that for alexandrite with a peak at 750 nm. The three zero phonon transitions of Ti:Al2O3 at liquid nitrogen temperatures are studied.

  4. Enhancing the Thermal Conductance of Polymer and Sapphire Interface via Self-Assembled Monolayer.

    PubMed

    Zheng, Kun; Sun, Fangyuan; Zhu, Jie; Ma, Yongmei; Li, Xiaobo; Tang, Dawei; Wang, Fosong; Wang, Xiaojia

    2016-08-23

    Interfacial thermal conductance (ITC) receives enormous consideration because of its significance in determining thermal performance of hybrid materials, such as polymer based nanocomposites. In this study, the ITC between sapphire and polystyrene (PS) was systematically investigated by time domain thermoreflectance (TDTR) method. Silane based self-assembled monolayers (SAMs) with varying end groups, -NH2, -Cl, -SH and -H, were introduced into sapphire/PS interface, and their effects on ITC were investigated. The ITC was found to be enhanced up by a factor of 7 through functionalizing the sapphire surface with SAM, which ends with a chloride group (-Cl). The results show that the enhancement of the thermal transport across the SAM-functionalized interface comes from both strong covalent bonding between sapphire and silane-based SAM, and the high compatibility between the SAM and PS. Among the SAMs studied in this work, we found that the ITC almost linearly depends on solubility parameters, which could be the dominant factor influencing on the ITC compared with wettability and adhesion. The SAMs serve as an intermediate layer that bridges the sapphire and PS. Such a feature can be applied to ceramic-polymer immiscible interfaces by functionalizing the ceramic surface with molecules that are miscible with the polymer materials. This research provides guidance on the design of critical-heat transfer materials such as composites and nanofluids for thermal management. PMID:27501117

  5. Fluoride laser crystals: old and new

    NASA Astrophysics Data System (ADS)

    Jenssen, Hans P.; Cassanho, Arlete

    2006-02-01

    The development of oxide and fluoride materials as gain materials of choice for solid state lasers ranges from early materials such as Calcium Fluoride and Calcium Tungstate crystals to the now ubiquitous Nd hosts YLF, YAG and Vanadate. Among Tunable laser materials, MgF II - an early favorite, gave way to superior oxides such as Alexandrite and Ti:Sapphire only to be followed by development of still newer tunable fluoride media, notably, fluoride colquiriites such as Cr-doped LiSAF and LiCaF. Newer fluoride crystals, such as Barium Yttrium Fluoride BaY II F 8 (BYF), KY 3F 10 (KYF) and the tunable Cr doped LiCaGaF 6 are attractive laser materials, but their growth has not been optimized. Key advantages of two of these new crystals are discussed. Crystal growth results for BYF and Cr:LiCaGaF 6 as well as some material characterization are presented.

  6. Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition

    PubMed Central

    2009-01-01

    ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate. PMID:20596413

  7. Generation of 3.5W high efficiency blue-violet laser by intracavity frequency-doubling of an all-solid-state tunable Ti:sapphire laser.

    PubMed

    Ding, X; Wang, R; Zhang, H; Wen, W Q; Huang, L; Wang, P; Yao, J Q; Yu, X Y; Li, Z

    2008-03-31

    In this paper, we report a high power, high efficiency blue-violet laser obtained by intracavity frequency-doubling of an all-solid-state Q-switched tunable Ti:sapphire laser, which was pumped by a 532 nm intracavity frequency-doubled Nd:YAG laser. A beta-BaB2O4 (BBO) crystal was used for frequency-doubling of the Ti:sapphire laser and a V-shape folded three-mirror cavity was optimized to obtain high power high efficiency second harmonic generation (SHG). At an incident pump power of 22 W, the tunable output from 355 nm to 475 nm was achieved, involving the maximum average output of 3.5 W at 400 nm with an optical conversion efficiency of 16% from the 532 nm pump laser to the blue-violet output. The beam quality factor M(2) was measured to be Mx(2)=2.15, My(2)=2.38 for characterizing the tunable blue laser. PMID:18542555

  8. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  9. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers

    NASA Astrophysics Data System (ADS)

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  10. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  11. Few-cycle, broadband, mid-infrared optical parametric oscillator pumped by a 20-fs Ti:sapphire laser

    PubMed Central

    Chaitanya Kumar, Suddapalli; Esteban-Martin, Adolfo; Ideguchi, Takuro; Yan, Ming; Holzner, Simon; Hänsch, Theodor W; Picqué, Nathalie; Ebrahim-Zadeh, Majid

    2014-01-01

    A few-cycle, broadband, singly-resonant optical parametric oscillator (OPO) for the mid-infrared based on MgO-doped periodically-poled LiNbO3 (MgO:PPLN), synchronously pumped by a 20-fs Ti:sapphire laser is reported. By using crystal interaction lengths as short as 250 µm, and careful dispersion management of input pump pulses and the OPO resonator, near-transform-limited, few-cycle idler pulses tunable across the mid-infrared have been generated, with as few as 3.7 optical cycles at 2682 nm. The OPO can be continuously tuned over 2179-3732 nm (4589-2680 cm-1) by cavity delay tuning, providing up to 33 mW of output power at 3723 nm. The idler spectra exhibit stable broadband profiles with bandwidths spanning over 422 nm (FWHM) recorded at 3732 nm. The effect of crystal length on spectral bandwidth and pulse duration is investigated at a fixed wavelength, confirming near-transform-limited idler pulses for all grating interaction lengths. By locking the repetition frequency of the pump laser to a radio-frequency reference, and without active stabilization of the OPO cavity length, an idler power stability better than 1.6% rms over >2.75 hours is obtained when operating at maximum output power, in excellent spatial beam quality with TEM00 mode profile. Photograph shows a multigrating MgO:PPLN crystal used as a nonlinear gain medium in the few-cycle femtosecond mid-IR OPO. The visible light is the result of non-phase-matched sum-frequency mixing between the interacting beams. PMID:25793016

  12. Improving light-emitting diode performance through sapphire substrate double-side patterning

    NASA Astrophysics Data System (ADS)

    Ju Kang, Ho; Cho, Sang Uk; Kim, Eung Soo; Kim, Chang-Seok; Jeong, Myung Yung

    2013-02-01

    Here, we present a new double-side patterned sapphire substrate methodology that improves the efficiency of gallium nitride-light emitting diodes (GaN-LEDs). The light extraction efficiency of GaN-based LEDs was analyzed through the use of a ray-tracing simulation. The extraction efficiency was simulated using patterned sapphire substrate LEDs with a variety of shapes, depths, sizes, and spacing. Through the optimal patterning of the various factors, high extraction efficiency was realized and subsequently improved upon. The thermal LED characteristics were analyzed through the use of the COMSOL general heat transfer module. The LEDs patterned on the sapphire substrate were fabricated using nano imprint lithography. We found that the output power of the double-side patterned LED was 52% greater than that of a flat LED. The thermal resistance of the double side patterned LED was 9.5 K/W less than that found for the flat LED.

  13. Thermal-induced wavefront aberration in sapphire-cooled Nd:glass slab

    NASA Astrophysics Data System (ADS)

    Huang, Tingrui; Huang, Wenfa; Wang, Jiangfeng; Lu, Xinghua; Li, Xuechun

    2016-07-01

    We demonstrate for the first time a sapphire-cooled Nd:glass composite assembly based on optical bonding of two thin sapphire plates to a Nd:glass slab for efficient heat removal. The distributions of temperature, stress, depolarization loss, and wavefront aberration were obtained by finite element analysis. The simulation results were verified experimentally. Although the heat generation rate was 4.5 W/cm3, the temperature increase was within 5.7 °C at the center of the sapphire surface, and the whole wavefront aberration was 1.21 λ ( λ = 1053 nm). This demonstration opens up a viable path toward novel repetition rate Nd:glass laser amplifier designs with efficient double-sided room-temperature heat sinking on both sides of the slab.

  14. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    NASA Technical Reports Server (NTRS)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  15. Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

    NASA Technical Reports Server (NTRS)

    Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

    2003-01-01

    This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

  16. Differential Synthetic Aperture Ladar

    SciTech Connect

    Stappaerts, E A; Scharlemann, E

    2005-02-07

    We report a differential synthetic aperture ladar (DSAL) concept that relaxes platform and laser requirements compared to conventional SAL. Line-of-sight translation/vibration constraints are reduced by several orders of magnitude, while laser frequency stability is typically relaxed by an order of magnitude. The technique is most advantageous for shorter laser wavelengths, ultraviolet to mid-infrared. Analytical and modeling results, including the effect of speckle and atmospheric turbulence, are presented. Synthetic aperture ladars are of growing interest, and several theoretical and experimental papers have been published on the subject. Compared to RF synthetic aperture radar (SAR), platform/ladar motion and transmitter bandwidth constraints are especially demanding at optical wavelengths. For mid-IR and shorter wavelengths, deviations from a linear trajectory along the synthetic aperture length have to be submicron, or their magnitude must be measured to that precision for compensation. The laser coherence time has to be the synthetic aperture transit time, or transmitter phase has to be recorded and a correction applied on detection.

  17. The experimentation research of IR imaging system capability affected by sapphire window's pneumatic calefaction

    NASA Astrophysics Data System (ADS)

    Liu, Yang-peng; Pan, Guo-qing; Zhang, Yun-qiang

    2009-07-01

    In the inclement pneumatic calefaction condition, the window of IR imaging system will be calefied and emit infrared radiation, so that the Signal-to-Noise and quality of target IR image are felled off that are from the imaging system. At this rate the physical characteristic of IR window direct affect capability of imaging system controlled and guided homing by IR tracker and measure precision of target IR characteristics. The properties of sapphire make it an ideal choice for the high speed missile applications compared to other existing or emerging materials. But the research has not been reported about the infrared radiation characteristic of sapphire as the IR window. In this paper, based on an IR imaging system using the sapphire window, the experimentation and conclusions of IR thermal image measurement affected by IR window's pneumatic calefaction have been accomplished. Firstly, the temperatures of sapphire window at supersonic flight extended over 1 km and 15 km from the ground have been estimated by calculating the flow and state variables and the aerodynamic heating into the window. On the base of the results calculated the window static state calefaction experimentation and electric arc wind tunnel experimentation had been designed and completed to validate the effect degree of pneumatic calefaction to the imaging system. With the temperatures of the sapphire window rising, in the image coming from the imaging system, the peak luminance of target image detected is increased, the background average luminance of the image is also increased, and the margin of above two varies in a little range. The data obtained from the different temperature experimentation have demonstrated that the IR flux due to the sapphire window becomes heated by friction with the air and heat transfer to the dome can obscure the target image created by the onboard IR sensor, depress Signal-to-Noise and resolving power of the imaging system, but can not overload the detector.

  18. 78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-13

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF ENERGY Federal Energy Regulatory Commission Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based... above-referenced proceeding, of Sapphire Power Marketing LLC's application for market-based...

  19. Automated synthetic scene generation

    NASA Astrophysics Data System (ADS)

    Givens, Ryan N.

    Physics-based simulations generate synthetic imagery to help organizations anticipate system performance of proposed remote sensing systems. However, manually constructing synthetic scenes which are sophisticated enough to capture the complexity of real-world sites can take days to months depending on the size of the site and desired fidelity of the scene. This research, sponsored by the Air Force Research Laboratory's Sensors Directorate, successfully developed an automated approach to fuse high-resolution RGB imagery, lidar data, and hyperspectral imagery and then extract the necessary scene components. The method greatly reduces the time and money required to generate realistic synthetic scenes and developed new approaches to improve material identification using information from all three of the input datasets.

  20. Beam overlapping in a multipass Ti:sapphire amplifier based on a parabolic mirror

    NASA Astrophysics Data System (ADS)

    Yang, Shengyi

    2005-06-01

    According to laser beam transporting in a multipass Ti:sapphire amplifier based on a parabolic mirror, the influential factors to induce astigmatism are analyzed. The beam waists of the laser beam transporting in the multipass amplifier are calculated by ABCD law in sagittal and tangential planes, respectively, and are compared with each other. Our analyses of these influential factors provide valuable data to optimize this design of multipass Ti:sapphire amplifier, and our experimental results of getting Gaussian beam from such a kind of amplifier confirmed our theoretical analyses.

  1. Morphology of ZnO grown by MOCVD on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Munuera, C.; Zúñiga-Pérez, J.; Rommeluere, J. F.; Sallet, V.; Triboulet, R.; Soria, F.; Muñoz-Sanjosé, V.; Ocal, C.

    2004-03-01

    A quantitative roughness and microstructural analysis of ZnO grown on sapphire by atmospheric metalorganic chemical vapor deposition (MOCVD) is presented. In order to investigate the influence of the substrate on the morphology, different sapphire orientations have been employed. Scanning force microscopy data have been analyzed for a variety of thicknesses to elucidate, if possible, the growth mechanisms involved in the growth process. Our study reveals significant differences between morphologies depending on whether the substrate surface exhibits steps (misoriented a-, c- and r-planes) or not ( m-plane); however, no major differences on the calculated roughness coefficients have been found.

  2. Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy

    SciTech Connect

    Pavlov, D. A.; Shilyaev, P. A.; Pirogov, A. V. Krivulin, N. O. Bobrov, A. I.; Pegasina, M. D.

    2013-06-15

    The formation of nanoislands of two forms (dome-shaped and a truncated dome) is experimentally found during the initial stage of silicon-on-sapphire heteroepitaxy. Atomic-resolution images of the silicon islands on sapphire are obtained by transmission electron microscopy. A model is proposed to explain the instability of the shape of islands and its transition from isotropic to anisotropic and to describe the evolution of average island sizes during growth. It is shown that the height dependence of the island diameter is approximately linear; however, for large island sizes there is a significant discrepancy with the experimental data due to island coalescence, which is disregarded in the model.

  3. Introduction of SILEX-I Femto-second Ti:sapphire laser Facility

    NASA Astrophysics Data System (ADS)

    Zhu, Qihua; Peng, Hansheng; Wei, Xiaofeng; Huang, Xiaojun; Zhang, Xiaomin; Wang, Xiaodong; Zhou, Kainan; Liu, Lanqin; Zeng, Xiaoming; Wang, Xiao; Guo, Yi; Lin, Donghui; Xu, Bing; Chu, Xiaoling

    2007-06-01

    We have built a Ti:sapphire laser system, referred to as SILEX-I, with a peak power of 286TW for a pulse duration of 30fs using chirped-pulse amplification technique. A number of spectral and spatio-temporal beam control measures have been taken and near-diffraction limited focal spots have been obtained which, to our knowledge, are the best far fields ever measured for any existing high-power Ti:sapphire laser system without deformable mirror corrections.

  4. Fabry-Perot cavity based on sapphire-derived fiber for high temperature sensor

    NASA Astrophysics Data System (ADS)

    Chen, Pengfei; Pang, Fufei; Zhao, Ziwen; Hong, Lin; Chen, Na; Chen, Zhenyi; Wang, Tingyun

    2015-09-01

    An optical fiber high temperature sensor is demonstrated by using a special sapphire-derived fiber. An air cavity is easily created through splicing the sapphire-derived fiber with standard single mode fiber (SMF). Utilizing the air cavity as one reflecting face, a Fabry-Perot (F-P) interferometer is fabricated in the special fiber. Attributed to the high ratio alumina component, the F-P interferometer exhibits high sensitivity response to temperature variation within the range up to 1000 °C. The sensitivity is 15.7 pm/°C.

  5. Self-assembly of gold nanoparticles on a single crystalline sapphire substrate

    NASA Astrophysics Data System (ADS)

    Takahashi, Hiroyuki; Shirahata, Naoto; Narushima, Takashi; Yonezawa, Tetsu

    2012-12-01

    Single crystalline sapphire is an atomically flat substrate with a high transparency in a wide wavelength region. However, its surface is chemically stable so that the modification by a self-assembled monolayer is somewhat difficult. We have used a H2O2 treatment at 70 °C to activate the surface and modified with a silan coupling reagent. The modification of the surface is discussed with the water contact angle. Immobilization of citrate-stabilized anionic gold nanoparticles on a cationically modified sapphire surface was carried out.

  6. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator.

    PubMed

    König, Karsten; Andersen, Peter; Le, Tuan; Breunig, Hans Georg

    2015-12-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become possible. PMID:26534831

  7. Incident beam polarization for laser Doppler velocimetry employing a sapphire cylindrical window

    NASA Technical Reports Server (NTRS)

    Lock, J. A.; Schock, H. J.

    1985-01-01

    For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

  8. High-power Ti:sapphire lasers for spectroscopy of antiprotonic atoms and radioactive ions

    NASA Astrophysics Data System (ADS)

    Hori, M.; Dax, A.; Soter, A.

    The ASACUSA collaboration has developed injection-seeded Ti:sapphire lasers of linewidth Γpl ˜ 6 MHz, pulse energy 50-100 mJ, and output wavelength λ = 726-941 nm. They are being used in two-photon spectroscopy experiments of antiprotonic helium atoms at the Antiproton Decelerator (AD) of CERN. Ti:sapphire lasers of larger linewidth Γpl ˜ 100 MHz but more robust design will also be used in collinear resonance ionization spectroscopy (CRIS) experiments of neutron-deficient francium ions at the ISOLDE facility.

  9. High-power Ti:sapphire lasers for spectroscopy of antiprotonic atoms and radioactive ions

    NASA Astrophysics Data System (ADS)

    Hori, M.; Dax, A.; Soter, A.

    2012-12-01

    The ASACUSA collaboration has developed injection-seeded Ti:sapphire lasers of linewidth Γpl ˜ 6 MHz, pulse energy 50-100 mJ, and output wavelength λ = 726-941 nm. They are being used in two-photon spectroscopy experiments of antiprotonic helium atoms at the Antiproton Decelerator (AD) of CERN. Ti:sapphire lasers of larger linewidth Γpl ˜ 100 MHz but more robust design will also be used in collinear resonance ionization spectroscopy (CRIS) experiments of neutron-deficient francium ions at the ISOLDE facility.

  10. Dissolution in a supercritical liquid as a mechanism of laser ablation of sapphire

    SciTech Connect

    Dolgaev, Sergei I; Karasev, M E; Kulevskii, L A; Simakin, Aleksandr V; Shafeev, Georgii A

    2001-07-31

    The laser ablation of sapphire is studied by irradiating its interface with water and aqueous solutions of KOH, KCl and Na{sub 2}CO{sub 3} by 2.92-{mu}m 130-ns holmium laser pulses. The ablation rate depends on the concentration and type of the dissolved substance. The highest ablation rate is 2.5{mu}m per pulse for a laser fluence of 120 J cm{sup -2}. The ablation of sapphire is attributed to its dissolution in water or in aqueous solutions in the supercritical state. (interaction of laser radiation with matter. laser plasma)

  11. Growth of non-polar a-plane AlN on r-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jo, Masafumi; Hirayama, Hideki

    2016-05-01

    Growth of non-polar AlN is crucial to the realization of polarization-free light-emitting diodes in deep UV range. The aim of this study was to investigate the growth condition for obtaining a flat a-plane AlN on r-plane sapphire. A thin AlN layer grown at lower temperature played an important role in protecting the sapphire surface. Both high temperature and low V/III ratio were necessary in terms of enhanced adatom diffusion, leading to the formation of a flat AlN buffer.

  12. Blocks and residual stresses in sapphire rods of different crystallographic orientations grown by the Stepanov method

    SciTech Connect

    Krymov, V. M. Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul’pina, I. L.

    2015-05-15

    The formation of blocks in shaped sapphire rods of two crystallographic orientations has been investigated. It is shown that, when growth occurs in the direction of the optical c axis, blocks are formed with a higher probability than in the case of growth in the a direction. A model of formation of blocks in rods of different orientations is proposed. The distribution of residual stresses over sapphire rod cross sections is measured by conoscopy. It is found that stresses increase from the middle of a rod to its periphery and reach 20 MPa.

  13. Synthetic battery cycling techniques

    NASA Technical Reports Server (NTRS)

    Leibecki, H. F.; Thaller, L. H.

    1982-01-01

    Synthetic battery cycling makes use of the fast growing capability of computer graphics to illustrate some of the basic characteristics of operation of individual electrodes within an operating electrochemical cell. It can also simulate the operation of an entire string of cells that are used as the energy storage subsystem of a power system. The group of techniques that as a class have been referred to as Synthetic Battery Cycling is developed in part to try to bridge the gap of understanding that exists between single cell characteristics and battery system behavior.

  14. Synthetic guide star generation

    DOEpatents

    Payne, Stephen A [Castro Valley, CA; Page, Ralph H [Castro Valley, CA; Ebbers, Christopher A [Livermore, CA; Beach, Raymond J [Livermore, CA

    2008-06-10

    A system for assisting in observing a celestial object and providing synthetic guide star generation. A lasing system provides radiation at a frequency at or near 938 nm and radiation at a frequency at or near 1583 nm. The lasing system includes a fiber laser operating between 880 nm and 960 nm and a fiber laser operating between 1524 nm and 1650 nm. A frequency-conversion system mixes the radiation and generates light at a frequency at or near 589 nm. A system directs the light at a frequency at or near 589 nm toward the celestial object and provides synthetic guide star generation.

  15. Synthetic guide star generation

    DOEpatents

    Payne, Stephen A.; Page, Ralph H.; Ebbers, Christopher A.; Beach, Raymond J.

    2004-03-09

    A system for assisting in observing a celestial object and providing synthetic guide star generation. A lasing system provides radiation at a frequency at or near 938 nm and radiation at a frequency at or near 1583 nm. The lasing system includes a fiber laser operating between 880 nm and 960 nm and a fiber laser operating between 1524 nm and 1650 nm. A frequency-conversion system mixes the radiation and generates light at a frequency at or near 589 nm. A system directs the light at a frequency at or near 589 nm toward the celestial object and provides synthetic guide star generation.

  16. Protein crystal growth in space

    NASA Technical Reports Server (NTRS)

    Bugg, C. E.; Clifford, D. W.

    1987-01-01

    The advantages of protein crystallization in space, and the applications of protein crystallography to drug design, protein engineering, and the design of synthetic vaccines are examined. The steps involved in using protein crystallography to determine the three-dimensional structure of a protein are discussed. The growth chamber design and the hand-held apparatus developed for protein crystal growth by vapor diffusion techniques (hanging-drop method) are described; the experimental data from the four Shuttle missions are utilized to develop hardware for protein crystal growth in space and to evaluate the effects of gravity on protein crystal growth.

  17. Large-area YBa2Cu3O(7-delta) thin films on sapphire for microwave applications

    NASA Technical Reports Server (NTRS)

    Cole, B. F.; Liang, G.-C.; Newman, N.; Char, K.; Zaharchuk, G.; Martens, J. S.

    1992-01-01

    We have deposited YBa2Cu3O(7-delta) (YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1 0 -1 0) sapphire, and R-plane (1 -1 0 2) sapphire is buffered by CeO2. Rs values of 450-620 microhms at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 microohms for a 5-cm-diam wafer and 700 microohms for 1 x 1 sq cm samples.

  18. Structural contribution to the roughness of supersmooth crystal surface

    SciTech Connect

    Butashin, A. V.; Muslimov, A. E. Kanevsky, V. M.; Deryabin, A. N.; Pavlov, V. A.; Asadchikov, V. E.

    2013-05-15

    Technological advances in processing crystals (Si, sapphire {alpha}-Al{sub 2}O{sub 3}, SiC, GaN, LiNbO{sub 3}, SrTiO{sub 3}, etc.) of substrate materials and X-ray optics elements make it possible to obtain supersmooth surfaces with a periodicity characteristic of the crystal structure. These periodic structures are formed by atomically smooth terraces and steps of nano- and subnanometer sizes, respectively. A model surface with such nanostructures is proposed, and the relations between its roughness parameters and the height of atomic steps are determined. The roughness parameters calculated from these relations almost coincide with the experimental atomic force microscopy (AFM) data obtained from 1 Multiplication-Sign 1 and 10 Multiplication-Sign 10 {mu}m areas on the surface of sapphire plates with steps. The minimum roughness parameters for vicinal crystal surfaces, which are due to the structural contribution, are calculated based on the approach proposed. A comparative analysis of the relief and roughness parameters of sapphire plate surfaces with different degrees of polishing is performed. A size effect is established: the relief height distribution changes from stochastic to regular with a decrease in the surface roughness.

  19. Biodegradable synthetic bone composites

    DOEpatents

    Liu, Gao; Zhao, Dacheng; Saiz, Eduardo; Tomsia, Antoni P.

    2013-01-01

    The invention provides for a biodegradable synthetic bone composition comprising a biodegradable hydrogel polymer scaffold comprising a plurality of hydrolytically unstable linkages, and an inorganic component; such as a biodegradable poly(hydroxyethylmethacrylate)/hydroxyapatite (pHEMA/HA) hydrogel composite possessing mineral content approximately that of human bone.

  20. Synthetic Aperture Radar Interferometry

    NASA Technical Reports Server (NTRS)

    Rosen, P. A.; Hensley, S.; Joughin, I. R.; Li, F.; Madsen, S. N.; Rodriguez, E.; Goldstein, R. M.

    1998-01-01

    Synthetic aperture radar interferometry is an imaging technique for measuring the topography of a surface, its changes over time, and other changes in the detailed characteristics of the surface. This paper reviews the techniques of interferometry, systems and limitations, and applications in a rapidly growing area of science and engineering.