New Passivation Methods of GaAs.

DTIC Science & Technology

1980-01-01

Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

Comparisons of single event vulnerability of GaAs SRAMS

NASA Astrophysics Data System (ADS)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Gallium arsenide processing for gate array logic

NASA Technical Reports Server (NTRS)

Cole, Eric D.

1989-01-01

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications

NASA Astrophysics Data System (ADS)

Feng, Ting

Today, GaAs based field effect transistors (FETs) have been used in a broad range of high-speed electronic military and commercial applications. However, their reliability still needs to be improved. Particularly the hydrogen induced degradation is a large remaining issue in the reliability of GaAs FETs, because hydrogen can easily be incorporated into devices during the crystal growth and virtually every device processing step. The main objective of this research work is to develop a new gate metallization system in order to reduce the hydrogen induced degradation from the gate region for GaAs based MESFETs and HEMTs. Cu/Ti gate metallization has been introduced into the GaAs MESFETs and HEMTs in our work in order to solve the hydrogen problem. The purpose of the use of copper is to tie up the hydrogen atoms and prevent hydrogen penetration into the device active region as well as to keep a low gate resistance for low noise applications. In this work, the fabrication technology of GaAs MESFETs and AlGaAs/GaAs HEMTs with Cu/Ti metallized gates have been successfully developed and the fabricated Cu/Ti FETs have shown comparable DC performance with similar Au-based GaAs FETs. The Cu/Ti FETs were subjected to temperature accelerated testing at NOT under 5% hydrogen forming gas and the experimental results show the hydrogen induced degradation has been reduced for the Cu/Ti FETs compared to commonly used AuPtTi based GaAs FETs. A long-term reliability testing for Cu/Ti FETs has also been carried out at 200°C and up to 1000hours and testing results show Cu/Ti FETs performed with adequate reliability. The failure modes were found to consist of a decrease in drain saturation current and pinch-off voltage and an increase in source ohmic contact resistance. Material characterization tools including Rutherford backscattering spectroscopy and a back etching technique were used in Cu/Ti GaAs FETs, and pronounced gate metal copper in-diffusion and intermixing compounds at the

GaAs Computer Technology

DTIC Science & Technology

1992-01-07

AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

Failure Mechanisms of GaAs Transistors - A Literature Survey

DTIC Science & Technology

1990-03-01

doping profile cannot be as sharp as with epitaxial methods. This is the result of the statistics of the implantation and the general diffusion that...Speed GaAs Logic Gates 5.1 GaAs PLANAR TRANSITOR STRUCTURES USED IN IC’S Some planar transistor structures used in IC’s with examples of the

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).

PubMed

Seo, Jae Hwa; Yoon, Young Jun; Kang, In Man

2018-09-01

The Ge/GaAs-based heterojunction gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET) have been designed and optimized using technology computer-aided design (TCAD) simulations. In our previous work, the silicon-based A-TFET was designed and demonstrated. However, to progress the electrical characteristics of A-TFET, the III-V compound heterojunction structures which has enhanced electrical properties must be adopted. Thus, the germanium with gallium arsenide (Ge/GaAs) is considered as key materials of A-TFET. The proposed device has a Ge-based p-doped source, GaAs-based i-doped channel and GaAs-based n-doped drain. Due to the critical issues of device performances, the doping concentration of source and channel region (Dsource, Dchannel), height of source region (Hsource) and epitaxially grown thickness of channel (tepi) was selected as design optimization variables of Ge/GaAs-based GAA A-TFET. The DC characteristics such as on-state current (ion), off-state current (ioff), subthreshold-swing (S) were of extracted and analyzed. Finally, the proposed device has a gate length (LG) of 90 nm, Dsource 5 × 1019 cm-3, Dchannel of 1018 cm-3, tepi of 4 nm, Hsource of 90 nm, R of 10 nm and demonstrate an ion of 2 mA/μm, S of 12.9 mV/dec.

Monolithic GaAs Dual-Gate FET Phase Shifter.

DTIC Science & Technology

1981-01-01

r ADAO 6 8 CA LABS PRINCETON NJ F/6 9/5 MNOLC4ITHIC SAAS DUAL-GATE FET PHASE SHIFTER.(U) UNC AN 81 M KUMAR, R HENNA, S N SUBBARAO NOOOI’-79-C-0568...PHASNT NUMBERls) M./Kumar S. N./ Subbarao G. T./Taylor -N 4 C 8 R./Menna H./Huang . 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT...PROGRESS ........................................................... 1 A. Development of Discrete 3600 Phase Shifter ....................... 2 B . Development

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

NASA Astrophysics Data System (ADS)

Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.

2016-02-01

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

NASA Technical Reports Server (NTRS)

1988-01-01

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takano, H.; Hosogi, K.; Kato, T.

1995-05-01

A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier withmore » an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.« less

A new assessment method of pHEMT models by comparing relative errors of drain current and its derivatives up to the third order

NASA Astrophysics Data System (ADS)

Dobeš, Josef; Grábner, Martin; Puričer, Pavel; Vejražka, František; Míchal, Jan; Popp, Jakub

2017-05-01

Nowadays, there exist relatively precise pHEMT models available for computer-aided design, and they are frequently compared to each other. However, such comparisons are mostly based on absolute errors of drain-current equations and their derivatives. In the paper, a novel method is suggested based on relative root-mean-square errors of both drain current and its derivatives up to the third order. Moreover, the relative errors are subsequently relativized to the best model in each category to further clarify obtained accuracies of both drain current and its derivatives. Furthermore, one our older and two newly suggested models are also included in comparison with the traditionally precise Ahmed, TOM-2 and Materka ones. The assessment is performed using measured characteristics of a pHEMT operating up to 110 GHz. Finally, a usability of the proposed models including the higher-order derivatives is illustrated using s-parameters analysis and measurement at more operating points as well as computation and measurement of IP3 points of a low-noise amplifier of a multi-constellation satellite navigation receiver with ATF-54143 pHEMT.

GaAs circuits for monolithic optical controller

NASA Technical Reports Server (NTRS)

Gustafson, G.; Bendett, M.; Carney, J.; Mactaggart, R.; Palmquist, S.

1988-01-01

GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedance amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.

Sn nanothreads in GaAs: experiment and simulation

NASA Astrophysics Data System (ADS)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Effect of Split Gate Size on the Electrostatic Potential and 0.7 Anomaly within Quantum Wires on a Modulation-Doped GaAs /AlGaAs Heterostructure

NASA Astrophysics Data System (ADS)

Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

2016-04-01

We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs /AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one-dimensional channel (estimated using a saddle-point model) and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different lengths. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.

GIDL analysis of the process variation effect in gate-all-around nanowire FET

NASA Astrophysics Data System (ADS)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

GaAs digital dynamic IC's for applications up to 10 GHz

NASA Astrophysics Data System (ADS)

Rocchi, M.; Gabillard, B.

1983-06-01

To evaluate the potentiality of GaAs MESFET's as transmitting gates, dynamic TT-bar flip-flops have been fabricated using a self-aligned planar process. The maximum operating frequency is 10.2 GHz, which is the best speed performance ever reported for a digital circuit. The performance of the transmitting gates within the circuits are discussed in detail. Speed improvement and topological simplification of fully static LSI subsystems are investigated.

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

NASA Astrophysics Data System (ADS)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

RF Properties of Epitaxial Lift-Off HEMT Devices

NASA Technical Reports Server (NTRS)

Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT

NASA Astrophysics Data System (ADS)

Hamaizia, Z.; Sengouga, N.; Yagoub, M. C. E.; Missous, M.

2012-02-01

This paper discusses the design of a wideband low noise amplifier (LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications. The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz. A common-drain in cascade with a common source inductive degeneration, broadband LNA topology is proposed for wideband applications. The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss (S11 < -10 dB, S22 < -11 dB). This LNA exhibits an input 1-dB compression point of -18 dBm, a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.

Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

2018-06-01

The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

Calmodulin regulates Cav3 T-type channels at their gating brake

PubMed Central

Taiakina, Valentina; Monteil, Arnaud; Piazza, Michael; Guan, Wendy; Stephens, Robert F.; Dieckmann, Thorsten; Guillemette, Joseph Guy; Spafford, J. David

2017-01-01

Calcium (Cav1 and Cav2) and sodium channels possess homologous CaM-binding motifs, known as IQ motifs in their C termini, which associate with calmodulin (CaM), a universal calcium sensor. Cav3 T-type channels, which serve as pacemakers of the mammalian brain and heart, lack a C-terminal IQ motif. We illustrate that T-type channels associate with CaM using co-immunoprecipitation experiments and single particle cryo-electron microscopy. We demonstrate that protostome invertebrate (LCav3) and human Cav3.1, Cav3.2, and Cav3.3 T-type channels specifically associate with CaM at helix 2 of the gating brake in the I–II linker of the channels. Isothermal titration calorimetry results revealed that the gating brake and CaM bind each other with high-nanomolar affinity. We show that the gating brake assumes a helical conformation upon binding CaM, with associated conformational changes to both CaM lobes as indicated by amide chemical shifts of the amino acids of CaM in 1H-15N HSQC NMR spectra. Intact Ca2+-binding sites on CaM and an intact gating brake sequence (first 39 amino acids of the I–II linker) were required in Cav3.2 channels to prevent the runaway gating phenotype, a hyperpolarizing shift in voltage sensitivities and faster gating kinetics. We conclude that the presence of high-nanomolar affinity binding sites for CaM at its universal gating brake and its unique form of regulation via the tuning of the voltage range of activity could influence the participation of Cav3 T-type channels in heart and brain rhythms. Our findings may have implications for arrhythmia disorders arising from mutations in the gating brake or CaM. PMID:28972185

Insertion of GaAs MMICs into EW systems

NASA Astrophysics Data System (ADS)

Schineller, E. R.; Pospishil, A.; Grzyb, J.

1989-09-01

Development activities on a microwave/mm-wave monolithic IC (MIMIC) program are described, as well as the methodology for inserting these GaAs IC chips into several EW systems. The generic EW chip set developed on the MIMIC program consists of 23 broadband chip types, including amplifiers, oscillators, mixers, switches, variable attenuators, power dividers, and power combiners. These chips are being designed for fabrication using the multifunction self-aligned gate process. The benefits from GaAs IC insertion are quantified by a comparison of hardware units fabricated with existing MIC and digital ECL technology and the same units manufactured with monolithic technology. It is found that major improvements in cost, reliability, size, weight, and performance can be realized. Examples illustrating the methodology for technology insertion are presented.

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandhi, S. K.

1981-01-01

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

NASA Astrophysics Data System (ADS)

Xi, Xiao-Wen; Chai, Chang-Chun; Liu, Yang; Yang, Yin-Tang; Fan, Qing-Yang; Shi, Chun-Lei

2016-08-01

An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Sulfur doping of GaAs with (NH4)2Sx solution

NASA Astrophysics Data System (ADS)

Lee, Jong-Lam

1999-01-01

A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, A.G.; Hietala, V.M.; Greenway, D.

1998-05-01

In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB ofmore » gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.« less

4 Kelvin Cryogenic Characterization of Commercial pHEMT Transistors at 9 kHz to 8.5 GHz Range

NASA Astrophysics Data System (ADS)

Ibarra-Medel, E.; Velázquez, M.; Ventura, S.; Ferrusca, D.; Gómez-Rivera, V.

2016-07-01

Nowadays, the technology innovations in large format array detectors at low temperature for millimetric observational astronomy demand the development of electronics capable to keep their functionality at cryogenic temperatures. In kinetic inductance detectors, the first stage of electronics readout requires high-bandwidth low-noise amplifiers (LNAs). These devices are commonly fabricated in monolithic microwave integrated circuit (MMIC) processes which commercially achieve a noise temperature level of 5 K. An alternative approach to the MMIC are the hybrid microwave circuit which mixes RF lumped elements and discrete electronic components. This paper describes the characterization of six commercial pHEMT transistors tested at cryogenic temperatures. DC properties such as I-V curves and transconductance (g_m) were measured for each transistor; these measurements allow us to calculate the best bias point versus gain, with the lowest noise figure and power consumption within the range of 9 kHz to 8.5 GHz at the operating temperature of 4 K. Experimental results suggest that the characterized pHEMTs have a noise figure that allow them to be used in hybrid LNAs arranges with a comparable MMIC performance.

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

NASA Astrophysics Data System (ADS)

Guerfi, Youssouf; Larrieu, Guilhem

2016-04-01

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

Design of quantum efficiency measurement system for variable doping GaAs photocathode

NASA Astrophysics Data System (ADS)

Chen, Liang; Yang, Kai; Liu, HongLin; Chang, Benkang

2008-03-01

To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. Through early research, we proved that variable doping structure is executable and practical, and has great potential. In order to optimize variable doping GaAs photocathode preparation techniques and study the variable doping theory deeply, a real-time quantum efficiency measurement system for GaAs Photocathode has been designed. The system uses FPGA (Field-programmable gate array) device, and high speed A/D converter to design a high signal noise ratio and high speed data acquisition card. ARM (Advanced RISC Machines) core processor s3c2410 and real-time embedded system are used to obtain and show measurement results. The measurement precision of photocurrent could reach 1nA, and measurement range of spectral response curve is within 400~1000nm. GaAs photocathode preparation process can be real-time monitored by using this system. This system could easily be added other functions to show the physic variation of photocathode during the preparation process more roundly in the future.

Design and implementation of GaAs HBT circuits with ACME

NASA Technical Reports Server (NTRS)

Hutchings, Brad L.; Carter, Tony M.

1993-01-01

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

Cathodoluminescence Characterization of Ion Implanted GaAs.

DTIC Science & Technology

1980-03-01

technique that can be used to characterize the semiconductor device "in situ" before further processing can save the Air Force valuable time as well...Patterson Air Force Base,Ohio i! i ill i I ;Wow AFIT/DS/PH/80- I.i1I LEVELOO CATHODOLUMINESCENCE CHARACTERIZATION OF ION IPLANTED GaAs D I SSERUrAT ION...CATODOLUMINESCENCE CHARACTERIZATION .’ a .... OF ION IMPLANTED GaAs’ - .. .. Dtriy’ t’ c:’/ A’: t 1. - Cc;-,P by an i’or Milton L one B.S., M.S. Major USAF Approved

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

NASA Astrophysics Data System (ADS)

Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

2009-03-01

In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results

Developing Low-Noise GaAs JFETs For Cryogenic Operation

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.

1995-01-01

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

The polar T1 interface is linked to conformational changes that open the voltage-gated potassium channel.

PubMed

Minor, D L; Lin, Y F; Mobley, B C; Avelar, A; Jan, Y N; Jan, L Y; Berger, J M

2000-09-01

Kv voltage-gated potassium channels share a cytoplasmic assembly domain, T1. Recent mutagenesis of two T1 C-terminal loop residues implicates T1 in channel gating. However, structural alterations of these mutants leave open the question concerning direct involvement of T1 in gating. We find in mammalian Kv1.2 that gating depends critically on residues at complementary T1 surfaces in an unusually polar interface. An isosteric mutation in this interface causes surprisingly little structural alteration while stabilizing the closed channel and increasing the stability of T1 tetramers. Replacing T1 with a tetrameric coiled-coil destabilizes the closed channel. Together, these data suggest that structural changes involving the buried polar T1 surfaces play a key role in the conformational changes leading to channel opening.

Spin-lattice relaxation of optically polarized nuclei in p -type GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Cherbunin, R. V.; Sokolov, P. S.; Yakovlev, D. R.; Bayer, M.; Suter, D.; Kavokin, K. V.

2018-04-01

Spin-lattice relaxation of the nuclear spin system in p -type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time T1 of optically pumped nuclei "in the dark," that is, in the absence of illumination. The measured T1 values fall into the subsecond time range, being three orders of magnitude shorter than in earlier studied n -type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependencies of T1 in p -GaAs, showing no similarity to those in n -GaAs. This unexpected behavior finds its explanation in the spatial selectivity of the optical pumping in p -GaAs, that is only efficient in the vicinity of shallow donors, together with the quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs. The developed theoretical model explains the whole set of experimental results.

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer

NASA Astrophysics Data System (ADS)

Sitnikov, A.; Kalabukhova, E.; Oliynyk, V.; Kolisnichenko, M.

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer.

PubMed

Sitnikov, A; Kalabukhova, E; Oliynyk, V; Kolisnichenko, M

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

Gate-Induced Interfacial Superconductivity in 1T-SnSe2.

PubMed

Zeng, Junwen; Liu, Erfu; Fu, Yajun; Chen, Zhuoyu; Pan, Chen; Wang, Chenyu; Wang, Miao; Wang, Yaojia; Xu, Kang; Cai, Songhua; Yan, Xingxu; Wang, Yu; Liu, Xiaowei; Wang, Peng; Liang, Shi-Jun; Cui, Yi; Hwang, Harold Y; Yuan, Hongtao; Miao, Feng

2018-02-14

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe 2 , a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature T c ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field B c2 , (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane B c2 approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications

NASA Astrophysics Data System (ADS)

Kim, Sungwon; Noh, Hunhee; Jang, Kyoungchul; Lee, JaeHak; Seo, Kwangseok

2005-04-01

In this study, 0.1 μm double-recessed T-gate GaAs pseudomorphic high electron mobility transistors (PHEMT’s), in which an InGaAs layer and a Si pulse-doped layer in the cap structure are inserted, have been successfully fabricated. This cap structure improves ohmic contact. The ohmic contact resistance is as small as 0.07 Ωmm, consequently the source resistance is reduced by about 20% compared to that of a conventional cap structure. This device shows good DC and microwave performance such as an extrinsic transconductance of 620 mS/mm, a maximum saturated drain current of 780 mA/mm, a cut-off frequency fT of 140 GHz and a maximum oscillation frequency of 260 GHz. The reverse breakdown is 5.7 V at a gate current density of 1 mA/mm. The maximum available gain is about 7 dB at 77 GHz. It is well suited for car radar monolithic microwave integrated circuits (MMICs).

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

NASA Technical Reports Server (NTRS)

Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

1987-01-01

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

2007-09-28

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures

NASA Astrophysics Data System (ADS)

Protasov, D. Yu.; Gulyaev, D. V.; Bakarov, A. K.; Toropov, A. I.; Erofeev, E. V.; Zhuravlev, K. S.

2018-03-01

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor-acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8-0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2-1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Ka-band Ga-As FET noise receiver/device development

NASA Technical Reports Server (NTRS)

Schellenberg, J. M.; Feng, M.; Hackett, L. H.; Watkins, E. T.; Yamasaki, H.

1982-01-01

The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

PubMed

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

High-fidelity gates in quantum dot spin qubits

PubMed Central

Koh, Teck Seng; Coppersmith, S. N.; Friesen, Mark

2013-01-01

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet–triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning ϵ, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound that is specific to the qubit-gate combination. We show that similar gate fidelities should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins. PMID:24255105

High-fidelity gates in quantum dot spin qubits.

PubMed

Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

2013-12-03

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

Observed circuit limits to time resolution in correlation measurements with Si-on-sapphire, GaAs, and InP picosecond photoconductors

NASA Astrophysics Data System (ADS)

Hammond, R. B.; Paulter, N. G.; Wagner, R. S.

1984-08-01

Cross-correlation measurements of the response of photoconductor pulsers and sampling gates excited by a femtosecond laser are reported. The photoconductors were fabricated in microstrip transmission line structures on Si-on-sapphire, semiinsulating GaAs, and semiinsulating InP wafers. The photoconductor sampling gates were ion beam-damaged to produce short carrier lifetimes (less than 3 ps in one case). Damage was introduced with 6 MeV Ne-20 on the Si-on-sapphire, 2 MeV H-2 on the GaAs, and 2 MeV He-4 on the InP. Doses in the range 10 to the 12th - 10 to the 15th were used. Results show circuit limits to the time resolution in correlation measurements from two sources: (1) RC time constants due to photoconductor gap capacitance and transmission line characteristic impedance and (2) dispersion in microstrip transmission lines.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

NASA Astrophysics Data System (ADS)

Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

2012-06-01

GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Carpenter, M. S.; Melloch, Michael R.; Cooper, James A., Jr.

1991-01-01

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Ku-band high efficiency GaAs MMIC power amplifiers

NASA Technical Reports Server (NTRS)

Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul

1988-01-01

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

Analysis of GAA/TTC DNA triplexes using nuclear magnetic resonance and electrospray ionization mass spectrometry.

PubMed

Mariappan, S V Santhana; Cheng, Xun; van Breemen, Richard B; Silks, Louis A; Gupta, Goutam

2004-11-15

The formation of a GAA/TTC DNA triplex has been implicated in Friedreich's ataxia. The destabilization of GAA/TTC DNA triplexes either by pH or by binding to appropriate ligands was analyzed by nuclear magnetic resonance (NMR) and positive-ion electrospray mass spectrometry. The triplexes and duplexes were identified by changes in the NMR chemical shifts of H8, H1, H4, 15N7, and 15N4. The lowest pH at which the duplex is detectable depends upon the overall stability and the relative number of Hoogsteen C composite function G to T composite function A basepairs. A melting pH (pHm) of 7.6 was observed for the destabilization of the (GAA)2T4(TTC)2T4(CTT)2 triplex to the corresponding Watson-Crick duplex and the T4(CTT)2 overhang. The mass spectrometric analyses of (TTC)6.(GAA)6 composite function(TTC)6 triplex detected ions due to both triplex and single-stranded oligonucleotides under acidic conditions. The triplex ions disappeared completely at alkaline pH. Duplex and single strands were detectable only at neutral and alkaline pH values. Mass spectrometric analyses also showed that minor groove-binding ligands berenil, netropsin, and distamycin and the intercalating ligand acridine orange destabilize the (TTC)6.(GAA)6 composite function (TTC)6 triplex. These NMR and mass spectrometric methods may function as screening assays for the discovery of agents that destabilize GAA/TTC triplexes and as general methods for the characterization of structure, dynamics, and stability of DNA and DNA-ligand complexes.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

NASA Astrophysics Data System (ADS)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-03-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

PubMed

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-12-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Investigation of high efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

1989-01-01

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors

NASA Astrophysics Data System (ADS)

Park, Mingyo; Min, Byung-Wook

2018-03-01

This paper presents an X-band transmit/receive switch using multi-gate NMOS transistors in a silicon-on-insulator CMOS process. For low loss and high power handling capability, floating body multi-gate NMOS transistors are adopted instead of conventional stacked NMOS transistors, resulting in 53% reduction of transistor area. Comparing to the stacked NMOS transistors, the multi gate transistor shares the source and drain region between stacked transistors, resulting in reduced chip area and parasitics. The impedance between bodies of gates in multi-gate NMOS transistors is assumed to be very large during design and confirmed after measurement. The measured input 1 dB compression point is 34 dBm. The measured insertion losses of TX and RX modes are respectively 1.7 dB and 2.0 dB at 11 GHz, and the measured isolations of TX and RX modes are >27 dB and >20 dB in X-band, respectively. The chip size is 0.086 mm2 without pads, which is 25% smaller than the T/R switch with stacked transistors.

Barrier versus tilt exchange gate operations in spin-based quantum computing

NASA Astrophysics Data System (ADS)

Shim, Yun-Pil; Tahan, Charles

2018-04-01

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered, and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-based gate operations.

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.

PubMed

Wang, Yi-Ting; Kim, Gil-Ho; Huang, C F; Lo, Shun-Tsung; Chen, Wei-Jen; Nicholls, J T; Lin, Li-Hung; Ritchie, D A; Chang, Y H; Liang, C-T; Dolan, B P

2012-10-10

We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting.

T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

PubMed

Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

2013-05-28

In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

Microprocessor design for GaAs technology

NASA Astrophysics Data System (ADS)

Milutinovic, Veljko M.

Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berl, M., E-mail: mberl@phys.ethz.ch; Tiemann, L.; Dietsche, W.

2016-03-28

We present a reliable method to obtain patterned back gates compatible with high mobility molecular beam epitaxy via local oxygen ion implantation that suppresses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique was optimized to circumvent several constraints of other gating and implantation methods. The ion-implanted surface remains atomically flat which allows unperturbed epitaxial overgrowth. We demonstrate the practical application of this gating technique by using magneto-transport spectroscopy on a two-dimensional electron system (2DES) with a mobility exceeding 20 × 10{sup 6} cm{sup 2}/V s. The back gate was spatially separated from the Ohmic contacts of the 2DES,more » thus minimizing the probability for electrical shorts or leakage and permitting simple contacting schemes.« less

Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, Jie; Li, Hai-Ou, E-mail: haiouli@ustc.edu.cn, E-mail: gpguo@ustc.edu.cn; Wang, Ke

To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal ofmore » the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.« less

Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.

PubMed

Miao, Xin; Zhang, Chen; Li, Xiuling

2013-06-12

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

NASA Astrophysics Data System (ADS)

Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

1992-12-01

Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies

NASA Astrophysics Data System (ADS)

Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

2018-01-01

III-V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III-V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

PubMed

Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Rai, A; Reuter, D; Wieck, A D; Micolich, A P

2013-08-14

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

DTIC Science & Technology

1992-12-01

AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1981-01-01

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

Unifying Gate Synthesis and Magic State Distillation.

PubMed

Campbell, Earl T; Howard, Mark

2017-02-10

The leading paradigm for performing a computation on quantum memories can be encapsulated as distill-then-synthesize. Initially, one performs several rounds of distillation to create high-fidelity magic states that provide one good T gate, an essential quantum logic gate. Subsequently, gate synthesis intersperses many T gates with Clifford gates to realize a desired circuit. We introduce a unified framework that implements one round of distillation and multiquibit gate synthesis in a single step. Typically, our method uses the same number of T gates as conventional synthesis but with the added benefit of quadratic error suppression. Because of this, one less round of magic state distillation needs to be performed, leading to significant resource savings.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Using the Secondary Electrons (SE) of scanning electron microscope with NIST`s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sartore, R.G.

1996-12-31

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10% to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The finalmore » measurements were performed were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1. This linescan is an average of 5 linescans in the immediate vicinity to reduce noise levels. A SEM image of the area is shown in Figure 2. To obtain a rough estimate of the slopes of the gate lines at the edges, the sample was tilted to 75 degrees and the image in Figure 3 was obtained. From this figure a rough estimate of the sloped edges, using a protractor, was obtained, approximately 27 degrees, +/-5 degrees.« less

100-nm gate lithography for double-gate transistors

NASA Astrophysics Data System (ADS)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

NASA Astrophysics Data System (ADS)

Vishvakarma, S. K.; Beohar, Ankur; Vijayvargiya, Vikas; Trivedi, Priyal

2017-07-01

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel field-effect transistor (TFET) has been made using distinct device geometry. Firstly, performance parameters of GAA-TFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm. However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device. Project supported by the Council of Scientific and Industrial Research (CSIR) Funded Research Project, Grant No. 22/0651/14/EMR-II, Government of India.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Library of synthetic transcriptional AND gates built with split T7 RNA polymerase mutants

PubMed Central

Shis, David L.; Bennett, Matthew R.

2013-01-01

The construction of synthetic gene circuits relies on our ability to engineer regulatory architectures that are orthogonal to the host’s native regulatory pathways. However, as synthetic gene circuits become larger and more complicated, we are limited by the small number of parts, especially transcription factors, that work well in the context of the circuit. The current repertoire of transcription factors consists of a limited selection of activators and repressors, making the implementation of transcriptional logic a complicated and component-intensive process. To address this, we modified bacteriophage T7 RNA polymerase (T7 RNAP) to create a library of transcriptional AND gates for use in Escherichia coli by first splitting the protein and then mutating the DNA recognition domain of the C-terminal fragment to alter its promoter specificity. We first demonstrate that split T7 RNAP is active in vivo and compare it with full-length enzyme. We then create a library of mutant split T7 RNAPs that have a range of activities when used in combination with a complimentary set of altered T7-specific promoters. Finally, we assay the two-input function of both wild-type and mutant split T7 RNAPs and find that regulated expression of the N- and C-terminal fragments of the split T7 RNAPs creates AND logic in each case. This work demonstrates that mutant split T7 RNAP can be used as a transcriptional AND gate and introduces a unique library of components for use in synthetic gene circuits. PMID:23479654

Library of synthetic transcriptional AND gates built with split T7 RNA polymerase mutants.

PubMed

Shis, David L; Bennett, Matthew R

2013-03-26

The construction of synthetic gene circuits relies on our ability to engineer regulatory architectures that are orthogonal to the host's native regulatory pathways. However, as synthetic gene circuits become larger and more complicated, we are limited by the small number of parts, especially transcription factors, that work well in the context of the circuit. The current repertoire of transcription factors consists of a limited selection of activators and repressors, making the implementation of transcriptional logic a complicated and component-intensive process. To address this, we modified bacteriophage T7 RNA polymerase (T7 RNAP) to create a library of transcriptional AND gates for use in Escherichia coli by first splitting the protein and then mutating the DNA recognition domain of the C-terminal fragment to alter its promoter specificity. We first demonstrate that split T7 RNAP is active in vivo and compare it with full-length enzyme. We then create a library of mutant split T7 RNAPs that have a range of activities when used in combination with a complimentary set of altered T7-specific promoters. Finally, we assay the two-input function of both wild-type and mutant split T7 RNAPs and find that regulated expression of the N- and C-terminal fragments of the split T7 RNAPs creates AND logic in each case. This work demonstrates that mutant split T7 RNAP can be used as a transcriptional AND gate and introduces a unique library of components for use in synthetic gene circuits.

LEC GaAs for integrated circuit applications

NASA Technical Reports Server (NTRS)

Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

1984-01-01

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

NASA Astrophysics Data System (ADS)

Shao, Jinhai; Deng, Jianan; Lu, W.; Chen, Yifang

2017-07-01

A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.

PubMed

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-06

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (10 7 ) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

NASA Astrophysics Data System (ADS)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-01

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool—Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

Structures of FolT in substrate-bound and substrate-released conformations reveal a gating mechanism for ECF transporters

NASA Astrophysics Data System (ADS)

Zhao, Qin; Wang, Chengcheng; Wang, Chengyuan; Guo, Hui; Bao, Zhihao; Zhang, Minhua; Zhang, Peng

2015-07-01

Energy-coupling factor (ECF) transporters are a new family of ABC transporters that consist of four subunits, two cytoplasmic ATPases EcfA and EcfA' and two transmembrane proteins namely EcfS for substrate-specific binding and EcfT for energy coupling. Here, we report the 3.2-Å resolution crystal structure of the EcfS protein of a folate ECF transporter from Enterococcus faecalis-EfFolT, a close homologue of FolT from Lactobacillus brevis-LbFolT. Structural and biochemical analyses reveal the residues constituting the folate-binding pocket and determining the substrate-binding specificity. Structural comparison of the folate-bound EfFolT with the folate-free LbFolT contained in the holotransporter complex discloses significant conformational change at the L1 loop, and reveals a gating mechanism of ECF transporters in which the L1 loop of EcfS acts as a gate in the substrate binding and release.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE

The 25 percent-efficient GaAs Cassegrainian concentrator cell

NASA Technical Reports Server (NTRS)

Hamaker, H. C.; Grounner, M.; Kaminar, N. R.; Kuryla, M. S.; Ladle, M. J.; Liu, D. D.; Macmillan, H. F.; Partain, L. D.; Virshup, G. F.; Werthen, J. G.

1989-01-01

Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration.

Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability

NASA Astrophysics Data System (ADS)

Ko, Kyul; Son, Dokyun; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this work, work-function variation (WFV) on 5 nm node gate-all-around (GAA) silicon 3D stacked nanowire FET (NWFET) and FinFET devices are studied for 6-T SRAM cells through 3D technology computer-aided design (TCAD) simulation. The NWFET devices have strong immunity for the unprecedented short channel effects (SCEs) compared with the FinFET devices owing to increased gate controllability. However, due to the narrow gate area, the single NWFET is more vulnerable to WFV effects than FinFET devices. Our results show that the WFV effects on single NWFETs are larger than the FinFETs by 45-55%. In the case of standard SRAM bit cells (high density: 111 bit cell), the variation of read stability (read static noise margin) on single NWFETs are larger than the FinFETs by 65-75%. Therefore, to improve the performance and having immunity to WFV effects, it is important to analyze the degree of variability in 3D stacked device architectures without area penalty. Moreover, we investigated the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of 3D stacked NWFET in 6-T SRAM bit cells.

GaAs Monolithic Microwave Subsystem Technology Base

DTIC Science & Technology

1980-01-01

To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

NASA Astrophysics Data System (ADS)

Sun, Bing; Chang, Hudong; Wang, Shengkai; Niu, Jiebin; Liu, Honggang

2017-12-01

In0.52Al0.48As/In0.7Ga0.3As metamorphic high-electron-mobility transistors (mHEMTs) on GaAs substrates have been demonstrated. The devices feature an epitaxial structure with Si-doped InP/In0.52Al0.48As Schottky layers, together with an atomic layer deposition (ALD) Al2O3 passivation process. In comparison to the GaAs mHEMTs with plasma enhanced chemical vapor deposition (PECVD) SiN passivation, the devices with ALD Al2O3 passivation exhibit more than one order of magnitude lower gate leakage current (Jg) and much lower contact resistance (RC) and specific contact resistivity (ρC). 100-nm gate length (Lg) In0.52Al0.48As/In0.7Ga0.3As mHEMTs with Si-doped InP/In0.52Al0.48As Schottky layers and ALD Al2O3 passivation exhibit excellent DC and RF characteristics, such as a maximum oscillation frequency (fmax) of 388.2 GHz.

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

NASA Astrophysics Data System (ADS)

Maradan, D.; Casparis, L.; Liu, T.-M.; Biesinger, D. E. F.; Scheller, C. P.; Zumbühl, D. M.; Zimmerman, J. D.; Gossard, A. C.

2014-06-01

We present measurements of the electron temperature using gate-defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.

Heterostructure-based high-speed/high-frequency electronic circuit applications

NASA Astrophysics Data System (ADS)

Zampardi, P. J.; Runge, K.; Pierson, R. L.; Higgins, J. A.; Yu, R.; McDermott, B. T.; Pan, N.

1999-08-01

With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J. Power-amplifier MMICs drive commercial circuits. Microwaves & RF, 1998. p. 116-24.]. In particular, HBTs are an attractive device for handset power amplifiers at 900 MHz and 1.9 GHz for CDMA applications [Lum E. GaAs technology rides the wireless wave. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 11-13; "Rockwell Ramps Up". Compound Semiconductor, May/June 1997.]. At higher frequencies, both HBTs and p-HEMTs are expected to dominate the marketplace. For high-speed lightwave circuit applications, heterostructure based products on the market for OC-48 (2.5 Gb/s) and OC-192 (10 Gb/s) are emerging [http://www.nb.rockwell.com/platforms/network_access/nahome.html#5.; http://www.nortel.com/technology/opto/receivers/ptav2.html.]. Chips that operate at 40 Gb/ have been demonstrated in a number of research laboratories [Zampardi PJ, Pierson RL, Runge K, Yu R, Beccue SM, Yu J, Wang KC. hybrid digital/microwave HBTs for >30 Gb/s optical communications. IEDM Technical Digest, 1995. p. 803-6; Swahn T, Lewin T, Mokhtari M, Tenhunen H, Walden R, Stanchina W. 40 Gb/s 3 Volt InP HBT ICs for a fiber optic demonstrator system. Proceedings of the 1996 GaAs IC Symposium, 1996. p. 125-8; Suzuki H, Watanabe K, Ishikawa K, Masuda H, Ouchi K, Tanoue T, Takeyari R. InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 215-8]. In addition to these two markets, another area where heterostructure devices are having significant impact is for data conversion [Walden RH. Analog-to digital convertor technology comparison. Proceedings of the 1994 GaAs IC Symposium, 1994. p. 217-9; Poulton K, Knudsen K, Corcoran J, Wang KC, Nubling RB, Chang M-CF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC. IEEE J Solid-State Circuits 1995;30:1109-18; Nary K, Nubling R, Beccue S, Colleran W

In vivo self-gated 23 Na MRI at 7 T using an oval-shaped body resonator.

PubMed

Platt, Tanja; Umathum, Reiner; Fiedler, Thomas M; Nagel, Armin M; Bitz, Andreas K; Maier, Florian; Bachert, Peter; Ladd, Mark E; Wielpütz, Mark O; Kauczor, Hans-Ulrich; Behl, Nicolas G R

2018-02-09

This work faces three challenges of sodium ( 23 Na) torso MRI on the way to quantitative 23 Na MRI: Development of a 23 Na radiofrequency transmit and receive coil covering a large part of the human body in width and length for 23 Na MRI at 7 T; reduction of blurring due to respiration in free-breathing 23 Na MRI using a self-gating approach; and reduction of image noise using a compressed-sensing reconstruction. An oval-shaped birdcage resonator with a large field of view of (400 mm) 3 and a homogeneous transmit and receive field distribution was designed, simulated, and implemented on a 7T MR system. In free-breathing 3-dimensional radial 23 Na MRI (acquisition time ≈ 30 minutes), retrospective respiratory self-gating was applied, which sorts the acquired projections into two respiratory states based on the intrinsic respiration-dependent signal changes. Furthermore, a 3-dimensional dictionary-learning compressed-sensing reconstruction was applied. The developed body coil provided homogeneous radiofrequency excitation (flip angle error of 4.9% in central region of interest of 23 × 13 × 10 cm 3 ) and homogeneous signal reception. The self-gating approach allowed for separation of the full data set into two subsets associated with different respiratory states (inhaled and exhaled), and thereby reduced blurring due to respiration in the separated images. Image noise was markedly reduced by the compressed-sensing algorithm. The presented body coil enables full body width 23 Na MRI with long z-axis coverage at 7 T for the first time. Additionally, the retrospective respiratory self-gating performance is demonstrated for free-breathing lung and abdominal 23 Na MRI in 3 subjects. © 2018 International Society for Magnetic Resonance in Medicine.

Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

NASA Astrophysics Data System (ADS)

Hou, H.; Chung, Y.; Rughoobur, G.; Hsiao, T. K.; Nasir, A.; Flewitt, A. J.; Griffiths, J. P.; Farrer, I.; Ritchie, D. A.; Ford, C. J. B.

2018-06-01

In a model of a gate-patterned quantum device, it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a  ∼0.2 V offset in pinch-off characteristics of 1D channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software.

SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, X; Cao, D; Housley, D

2014-06-01

Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-movingmore » platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.« less

Phosphine Functionalization GaAs(111)A Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Traub, M.; Biteen, J; Michalak, D

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

Nitridation of porous GaAs by an ECR ammonia plasma

NASA Astrophysics Data System (ADS)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

NASA Astrophysics Data System (ADS)

O'Uchi, Shin-Ichi; Masahara, Meishoku; Sakamoto, Kunihiro; Endo, Kazuhiko; Liu, Yungxun; Matsukawa, Takashi; Sekigawa, Toshihiro; Koike, Hanpei; Suzuki, Eiichi

A Flex-Pass-Gate SRAM, i.e. a fin-type-field-effect-transistor- (FinFET-) based SRAM, is proposed to enhance noise margin during both read and write operations. In its cell, the flip-flop is composed of usual three-terminal- (3T-) FinFETs while pass gates are composed of four-terminal- (4T-) FinFETs. The 4T-FinFETs enable to adopt a dynamic threshold-voltage control in the pass gates. During a write operation, the threshold voltage of the pass gates is lowered to enhance the writing speed and stability. During the read operation, on the other hand, the threshold voltage is raised to enhance the static noise margin. An asymmetric-oxide 4T-FinFET is helpful to manage the leakage current through the pass gate. In this paper, a design strategy of the pass gate with an asymmetric gate oxide is considered, and a TCAD-based Monte Carlo simulation reveals that the Flex-Pass-Gate SRAM based on that design strategy is expected to be effective in half-pitch 32-nm technology for low-standby-power (LSTP) applications, even taking into account the variability in the device performance.

Self-Gated Late Gadolinium Enhancement at 7T to Image Rats with Reperfused Acute Myocardial Infarction.

PubMed

Wang, Lei; Chen, Yushu; Zhang, Bing; Chen, Wei; Wang, Chunhua; Song, Li; Xu, Ziqian; Zheng, Jie; Gao, Fabao

2018-01-01

A failed electrocardiography (ECG)-trigger often leads to a long acquisition time (TA) and deterioration in image quality. The purpose of this study was to evaluate and optimize the technique of self-gated (SG) cardiovascular magnetic resonance (CMR) for cardiac late gadolinium enhancement (LGE) imaging of rats with myocardial infarction/reperfusion. Cardiovascular magnetic resonance images of 10 rats were obtained using SG-LGE or ECG with respiration double-gating (ECG-RESP-gating) method at 7T to compare differences in image interference and TA between the two methods. A variety of flip angles (FA: 10°-80°) and the number of repetitions (NR: 40, 80, 150, and 300) were investigated to determine optimal scan parameters of SG-LGE technique based on image quality score and contrast-to-noise ratio (CNR). Self-gated late gadolinium enhancement allowed successful scan in 10 (100%) rats. However, only 4 (40%) rats were successfully scanned with the ECG-RESP-gating method. TAs with SG-LGE varied depending on NR used (TA: 41, 82, 154, and 307 seconds, corresponding to NR of 40, 80, 150, and 300, respectively). For the ECG-RESP-gating method, the average TA was 220 seconds. For SG-LGE images, CNR (42.5 ± 5.5, 43.5 ± 7.5, 54 ± 9, 59.5 ± 8.5, 56 ± 13, 54 ± 8, and 41 ± 9) and image quality score (1.85 ± 0.75, 2.20 ± 0.83, 2.85 ± 0.37, 3.85 ± 0.52, 2.8 ± 0.51, 2.45 ± 0.76, and 1.95 ± 0.60) were achieved with different FAs (10°, 15°, 20°, 25°, 30°, 35°, and 40°, respectively). Optimal FAs of 20°-30° and NR of 80 were recommended. Self-gated technique can improve image quality of LGE without irregular ECG or respiration gating. Therefore, SG-LGE can be used an alternative method of ECG-RESP-gating.

The episodic ataxia type 1 mutation I262T alters voltage-dependent gating and disrupts protein biosynthesis of human Kv1.1 potassium channels.

PubMed

Chen, Szu-Han; Fu, Ssu-Ju; Huang, Jing-Jia; Tang, Chih-Yung

2016-01-18

Voltage-gated potassium (Kv) channels are essential for setting neuronal membrane excitability. Mutations in human Kv1.1 channels are linked to episodic ataxia type 1 (EA1). The EA1-associated mutation I262T was identified from a patient with atypical phenotypes. Although a previous report has characterized its suppression effect, several key questions regarding the impact of the I262T mutation on Kv1.1 as well as other members of the Kv1 subfamily remain unanswered. Herein we show that the dominant-negative effect of I262T on Kv1.1 current expression is not reversed by co-expression with Kvβ1.1 or Kvβ2 subunits. Biochemical examinations indicate that I262T displays enhanced protein degradation and impedes membrane trafficking of Kv1.1 wild-type subunits. I262T appears to be the first EA1 mutation directly associated with impaired protein stability. Further functional analyses demonstrate that I262T changes the voltage-dependent activation and Kvβ1.1-mediated inactivation, uncouples inactivation from activation gating, and decelerates the kinetics of cumulative inactivation of Kv1.1 channels. I262T also exerts similar dominant effects on the gating of Kv1.2 and Kv1.4 channels. Together our data suggest that I262T confers altered channel gating and reduced functional expression of Kv1 channels, which may account for some of the phenotypes of the EA1 patient.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

PubMed

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

PubMed Central

2012-01-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

NASA Astrophysics Data System (ADS)

Mun, Jae Kyoung; Ji, Hong Gu; Ahn, Hyokyun; Kim, Haecheon; Park, Chong-Ook

2005-08-01

In this paper, we propose a channel structure for a promising switch pHEMT with excellent isolation characteristics based on the distribution of electric field intensity beneath the Schottky contact in the transistor. Using the proposed device channel structure, SPST and SPDT switches were designed and fabricated, applicable to 2.4 GHz and 5.8 GHz WLAN systems. We discuss the relationship between dc characteristics and switch parameters in this paper in detail. The developed SPST switch exhibits a low insertion loss of 0.26 dB and a high isolation of 34.3 dB with a control voltage of 0 V/-3 V at 5.8 GHz. The SPDT also shows a good performance of 0.85 dB insertion loss and 31.5 dB isolation under the same conditions. The measured power-handling capability at 2.4 GHz reveals that the SPDT has an output power of 27 dBm at the 1 dB compression point and a third-order intercept point of more than 46 dBm.

Feedback-tuned, noise resilient gates for encoded spin qubits

NASA Astrophysics Data System (ADS)

Bluhm, Hendrik

Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

NASA Astrophysics Data System (ADS)

An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

2015-10-01

Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

PubMed

Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

2014-01-01

First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Characteristics of GaAs with inverted thermal conversion

NASA Technical Reports Server (NTRS)

Kang, C. H.; Lagowski, J.; Gatos, H. C.

1987-01-01

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

Correction for the T1 Effect Incorporating Flip Angle Estimated by Kalman Filter in Cardiac-Gated Functional MRI

PubMed Central

Shin, Jaemin; Ahn, Sinyeob; Hu, Xiaoping

2015-01-01

Purpose To develop an improved and generalized technique for correcting T1-related signal fluctuations (T1 effect) in cardiac-gated functional magnetie resonance imaging (fMRI) data with flip angle estimation. Theory and Methods Spatial maps of flip angle and T1 are jointly estimated from cardiac-gated time series using a Kalman filter. These maps are subsequently used for removing the T1 effect in the presence of B1 inhomogeneity. The new technique was compared with a prior technique that uses T1 only while assuming a homogeneous flip angle of 90°. The robustness of the new technique is demonstrated with simulated and experimental data. Results Simulation results revealed that the new method led to increased temporal signal-to-noise ratio across a large range of flip angles, T1s, and stimulus onset asynchrony means compared to the T1 only approach. With the experimental data, the new approach resulted in higher average gray matter temporal signal-to-noise ratio of seven subjects (84 vs. 48). The new approach also led to a higher statistical score of activation in the lateral geniculate nucleus (P < 0.002). Conclusion The new technique is able to remove the T1 effect robustly and is a promising tool for improving the ability to map activation in fMRI, especially in subcortical regions. PMID:23390029

Impurity and Defect Interactions in GaAs.

DTIC Science & Technology

1984-02-29

3 VPE a X X ASW 3 vIE 33 34 35 36"M-cVO Wawwmba (CM - Z TS 32 -~ - .35T 2II i I MS . 34 35 3 , b Wovor%~~e (€cm -) X3 FiS.l Characteristic donor peaks ...2). Far infrared photoconductivity measurements on Si doped GaAs grown by molecular beam epitaxy (MBE) indicated that the impurity peak previously...difference is donor species dependent, each hydrogenic transition in a photothermal ionization spectrum contains several closely spaced peaks . Each peak cor

Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2016-12-01

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

Electrodeposition of Metal on GaAs Nanowires

NASA Astrophysics Data System (ADS)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

GaAs Solar Cell Radiation Handbook

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.

1996-01-01

The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1979-01-01

The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

Probing the excited subband dispersion of holes confined to GaAs wide quantum wells

NASA Astrophysics Data System (ADS)

Jo, Insun; Liu, Yang; Deng, H.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.

Owing to the strong spin-orbit coupling and their large effective mass, the two-dimensional (2D) holes in modulation-doped GaAs quantum wells provide a fertile test bed to study the rich physics of low-dimensional systems. In a wide quantum well, even at moderate 2D densities, the holes start to occupy the excited subband, a subband whose dispersion is very unusual and has a non-monotonic dependence on the wave vector. Here, we study a 2D hole system confined to a 40-nm-thick (001) GaAs quantum well and demonstrate that, via the application of both front and back gates, the density can be tuned in a wide range, between ~1 and 2 ×1011 cm-2. Using Fourier analysis of the low-field Shubnikov-de Haas oscillations, we investigate the population of holes and the spin-orbit interaction induced spin-splitting in different subbands. We discuss the results in light of self-consistent quantum calculations of magneto-oscillations. Work support by the DOE BES (DE-FG02-00-ER45841), the NSF (Grants DMR-1305691 and MRSEC DMR-1420541), the Gordon and Betty Moore Foundation (Grant GBMF4420), and Keck Foundation for experiments, and the NSF Grant DMR-1310199 for calculations.

High quality GaAs single photon emitters on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bietti, S.; Sanguinetti, S.; Cavigli, L.

2013-12-04

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially

Characterisation of semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

1982-01-01

Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

Technology requirements for GaAs photovoltaic arrays

NASA Technical Reports Server (NTRS)

Scott-Monck, J.; Rockey, D.

1981-01-01

An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

Crystal Growth of Device Quality Gaas in Space

NASA Technical Reports Server (NTRS)

Gatos, H. C.

1985-01-01

The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Supernormal hardness increase of dilute Ga(As, N) thin films

NASA Astrophysics Data System (ADS)

Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

2017-03-01

Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V.

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not themore » voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

SU-F-T-479: Estimation of the Accuracy in Respiratory-Gated Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosawa, T; Miyakawa, S; Sato, M

Purpose: Irregular respiratory patterns affects dose outputs in respiratorygated radiotherapy and there is no commercially available quality assurance (QA) system for it. We designed and developed a patient specific QA system for respiratory-gated radiotherapy to estimate irradiated output. Methods: Our in-house QA system for gating was composed of a personal computer with the USB-FSIO electronic circuit connecting to the linear accelerator (ONCOR-K, Toshiba Medical Systems). The linac implements a respiratory gating system (AZ-733V, Anzai Medical). During the beam was on, 4.2 V square-wave pulses were continually sent to the system. Our system can receive and count the pulses. At first,more » our system and an oscilloscope were compared to check the performance of our system. Next, basic estimation models were generated when ionization-chamber measurements were performed in gating using regular sinusoidal wave patterns (2.0, 2.5, 4.0, 8.0, 15 sec/cycle). During gated irradiation with the regular patterns, the number of the pulses per one gating window was measured using our system. Correlation between the number of the pulses per one gating and dose per the gating window were assessed to generate the estimation model. Finally, two irregular respiratory patterns were created and the accuracy of the estimation was evaluated. Results: Compared to the oscilloscope, our system worked similarly. The basic models were generated with the accuracy within 0.1%. The results of the gated irradiations with two irregular respiratory patterns show good agreement within 0.4% estimation accuracy. Conclusion: Our developed system shows good estimation for even irregular respiration patterns. The system would be a useful tool to verify the output for respiratory-gated radiotherapy.« less

Doping assessment in GaAs nanowires.

PubMed

Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

2018-06-08

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Doping assessment in GaAs nanowires

NASA Astrophysics Data System (ADS)

Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

2018-06-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

SU-E-T-401: Feasibility Study of Using ABC to Gate Lung SBRT Treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, D; Xie, X; Shepard, D

2014-06-01

Purpose: The current SBRT treatment techniques include free breathing (FB) SBRT and gated FB SBRT. Gated FB SBRT has smaller target and less lung toxicity with longer treatment time. The recent development of direct connectivity between the ABC and linac allowing for automated beam gating. In this study, we have examined the feasibility of using ABC system to gate the lung SBRT treatment. Methods: A CIRS lung phantom with a 3cm sphere-insert and a moving chest plate was used in this study. Sinusoidal motion was used for the FB pattern. An ABC signal was imported to simulate breath holds. 4D-CTmore » was taken in FB mode and average-intensity-projection (AIP) was used to create FB and 50% gated FB SBRT planning CT. A manually gated 3D CT scan was acquired for ABC gated SBRT planning.An SBRT plan was created for each treatment option. A surface-mapping system was used for 50% gating and ABC system was used for ABC gating. A manually gated CBCT scan was also performed to verify setup. Results: Among three options, the ABC gated plan has the smallest PTV of 35.94cc, which is 35% smaller comparing to that of the FB plan. Consequently, the V20 of the left lung reduced by 15% and 23% comparing to the 50% gated FB and FB plans, respectively. The FB plan took 4.7 minutes to deliver, while the 50% gated FB plan took 18.5 minutes. The ABC gated plan delivery took only 10.6 minutes. A stationary target with 3cm diameter was also obtained from the manually gated CBCT scan. Conclusion: A strategy for ABC gated lung SBRT was developed. ABC gating can significantly reduce the lung toxicity while maintaining the target coverage. Comparing to the 50% gated FB SBRT, ABC gated treatment can also provide less lung toxicity as well as improved delivery efficiency. This research is funded by Elekta.« less

Gate-controlled tunneling of quantum Hall edge states in bilayer graphene

NASA Astrophysics Data System (ADS)

Zhu, Jun; Li, Jing; Wen, Hua

Controlled tunneling of integer and fractional quantum Hall edge states provides a powerful tool to probe the physics of 1D systems and exotic particle statistics. Experiments in GaAs 2DEGs employ either a quantum point contact or a line junction tunnel barrier. It is generally difficult to independently control the filling factors νL and νR on the two sides of the barrier. Here we show that in bilayer graphene both νL and νR as well as their Landau level structures can be independently controlled using a dual-split-gate structure. In addition, the height of the line-junction tunnel barrier implemented in our experiments is tunable via a 5th gate. By measuring the tunneling resistance across the junction RT we examine the equilibration of the edge states in a variety of νL/νR scenarios and under different barrier heights. Edge states from both sides are fully mixed in the case of a low barrier. As the barrier height increases, we observe plateaus in RT that correspond to sequential complete backscattering of edge states. Gate-controlled manipulation of edge states offers a new angle to the exploration of quantum Hall magnetism and fractional quantum Hall effect in bilayer graphene.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

NASA Astrophysics Data System (ADS)

Jacobi, K.; Geelhaar, L.; Márquez, J.

We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

Electrode pattern design for GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Haiyang, Chen; Jianhua, Yin; Darang, Li

2011-08-01

The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

GaAs core--shell nanowires for photovoltaic applications.

PubMed

Czaban, Josef A; Thompson, David A; LaPierre, Ray R

2009-01-01

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well

NASA Astrophysics Data System (ADS)

Kamburov, D.; Baldwin, K. W.; West, K. W.; Lyon, S.; Pfeiffer, L. N.; Pinczuk, A.

2017-06-01

We compare micro-photoluminescence (μPL) as a measure of the electron density in a clean, two-dimensional (2D) system confined in a GaAs quantum well (QW) to the standard magneto-transport technique. Our study explores the PL shape evolution across a number of molecular beam epitaxy-grown samples with different QW widths and 2D electron densities and notes its correspondence with the density obtained in magneto-transport measurements on these samples. We also measure the 2D density in a top-gated quantum well sample using both PL and transport and find that the two techniques agree to within a few percent over a wide range of gate voltages. We find that the PL measurements are sensitive to gate-induced 2D density changes on the order of 109 electrons/cm2. The spatial resolution of the PL density measurement in our experiments is 40 μm, which is already substantially better than the millimeter-scale resolution now possible in spatial density mapping using magneto-transport. Our results establish that μPL can be used as a reliable high spatial resolution technique for future contactless measurements of density variations in a 2D electron system.

Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M.

2017-02-22

Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novelmore » molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.« less

GaAs homojunction solar cell development

NASA Technical Reports Server (NTRS)

Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

1980-01-01

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Nanopatterning as a Probe of Unstable Growth on GaAs(001)

NASA Astrophysics Data System (ADS)

Cosert, Krista; Lin, Chuan-Fu; Hammouda, Ajmi; Kan, Hung-Chih; Subrumaniam, Kanakaraju; Richardson, Chris; Phaneuf, Ray

2009-03-01

We report on observations of unstable growth on nanopatterned GaAs(001) surfaces. For growth at 500^oC, 1 ML/sec and an As2/Ga beam equivalent pressure ratio of 10:1, we find that grooves oriented at right angles to [110] produce a build up of ridges of GaAs at the upper edges, while for grooves oriented at right angles to [110] no ridges form; instead cusps evolve at the bottoms of such grooves [1]. The cusp-forming grooves show a pronounced initial amplification of depth during growth which changes with length/width ratio, and become more narrow. The ridge-forming grooves instead broaden during growth. We compare these experimental observations with kinetic Monte Carlo simulations in which a small anisotropic Ehrlich-Schwoebel barrier is included. [1] T. Tadayyon-Eslami, H.-C. Kan, L. C. Calhoun and R. J. Phaneuf, Phys. Rev. Lett. 97, 126101 (2006)

Performance analysis of gate all around GaAsP/AlGaSb CP-TFET

NASA Astrophysics Data System (ADS)

Lemtur, Alemienla; Sharma, Dheeraj; Suman, Priyanka; Patel, Jyoti; Yadav, Dharmendra Singh; Sharma, Neeraj

2018-05-01

Illustration of importance of gate all around (GAA) structure and hetero-junction formed by III-V semiconductor compounds has been analysed through GaAsP/AlGaSb CP-TFET (charge plasma tunnel field effect transistor). Charge plasma concept has been incorporated here to make this device more immune towards random dopant fluctuations (RDF). A high driving current of 1.28 ×10-5 A/μm and transconductance (gm) of 96.4 μS at supply voltages VGS = 1V and VDS = 0.5V is achieved. Further, implications of employing this device in analog/RF circuits have been supported with simulated results showing a high cut-off frequency of 34.5 THz and device efficiency of 3.45 MV-1. Apart from this, an insight of the linearity performances has also been included. Simultaneously, all the results are compared with a conventional gate all around charge plasma TFET.

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

NASA Technical Reports Server (NTRS)

Tserng, Hua-Quen; Ketterson, Andrew; Saunier, Paul; McCarty, Larry; Davis, Steve

1998-01-01

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

1982-01-01

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Diffusive transport in the presence of stochastically gated absorption

NASA Astrophysics Data System (ADS)

Bressloff, Paul C.; Karamched, Bhargav R.; Lawley, Sean D.; Levien, Ethan

2017-08-01

We analyze a population of Brownian particles moving in a spatially uniform environment with stochastically gated absorption. The state of the environment at time t is represented by a discrete stochastic variable k (t )∈{0 ,1 } such that the rate of absorption is γ [1 -k (t )] , with γ a positive constant. The variable k (t ) evolves according to a two-state Markov chain. We focus on how stochastic gating affects the attenuation of particle absorption with distance from a localized source in a one-dimensional domain. In the static case (no gating), the steady-state attenuation is given by an exponential with length constant √{D /γ }, where D is the diffusivity. We show that gating leads to slower, nonexponential attenuation. We also explore statistical correlations between particles due to the fact that they all diffuse in the same switching environment. Such correlations can be determined in terms of moments of the solution to a corresponding stochastic Fokker-Planck equation.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Panel fabrication utilizing GaAs solar cells

NASA Technical Reports Server (NTRS)

Mardesich, N.

1984-01-01

The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

SU-E-T-439: Fundamental Verification of Respiratory-Gated Spot Scanning Proton Beam Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamano, H; Yamakawa, T; Hayashi, N

Purpose: The spot-scanning proton beam irradiation with respiratory gating technique provides quite well dose distribution and requires both dosimetric and geometric verification prior to clinical implementation. The purpose of this study is to evaluate the impact of gating irradiation as a fundamental verification. Methods: We evaluated field width, flatness, symmetry, and penumbra in the gated and non-gated proton beams. The respiration motion was distinguished into 3 patterns: 10, 20, and 30 mm. We compared these contents between the gated and non-gated beams. A 200 MeV proton beam from PROBEAT-III unit (Hitachi Co.Ltd) was used in this study. Respiratory gating irradiationmore » was performed by Quasar phantom (MODUS medical devices) with a combination of dedicated respiratory gating system (ANZAI Medical Corporation). For radiochromic film dosimetry, the calibration curve was created with Gafchromic EBT3 film (Ashland) on FilmQA Pro 2014 (Ashland) as film analysis software. Results: The film was calibrated at the middle of spread out Bragg peak in passive proton beam. The field width, flatness and penumbra in non-gated proton irradiation with respiratory motion were larger than those of reference beam without respiratory motion: the maximum errors of the field width, flatness and penumbra in respiratory motion of 30 mm were 1.75% and 40.3% and 39.7%, respectively. The errors of flatness and penumbra in gating beam (motion: 30 mm, gating rate: 25%) were 0.0% and 2.91%, respectively. The results of symmetry in all proton beams with gating technique were within 0.6%. Conclusion: The field width, flatness, symmetry and penumbra were improved with the gating technique in proton beam. The spot scanning proton beam with gating technique is feasible for the motioned target.« less

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Technical Reports Server (NTRS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-01-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Prediction of dislocation generation during Bridgman growth of GaAs crystals

NASA Astrophysics Data System (ADS)

Tsai, C. T.; Yao, M. W.; Chait, Arnon

1992-11-01

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Discharge ratings for tainter gates and roller gates at Lock and Dam No. 7 on the Mississippi River, La Crescent, Minnesota

USGS Publications Warehouse

Corsi, Steven R.; Schuler, J.G.

1995-01-01

Coefficients of discharge (Cgs) ranged fron 0.126 (hg = 1 foot) to 1.089 (hg = 10 feet) for tainter gates and from 0.050 (hg = 1 foot) to 0.302 (hg = 14 feet) for roller gates. Disch^ge was measured at three different tainter gates with the gates closed (hg = 0) to evaluate tH tainter-gate leakage-discharge relations. No measurable leakage was observed. The resulting equations can be used to compute discharge at Lock and Dam No. 7 for the tainter and re Her gates under normal flow conditions. Discharge rating tables for the tainter and roller gates are given with a headwater elevation of 639.00 feet normal pool elevation for selected tailwate" elevations and gate openings.

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

NASA Astrophysics Data System (ADS)

Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2017-09-01

The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

LEED and AES characterization of the GaAs(110)-ZnSe interface

NASA Technical Reports Server (NTRS)

Tu, D.-W.; Kahn, A.

1984-01-01

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1983-01-01

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

NASA Astrophysics Data System (ADS)

Seo, Youngsoo; Kim, Shinkeun; Ko, Kyul; Woo, Changbeom; Kim, Minsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, electrical characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were analyzed for single transistor and 6T-SRAM cell through 3D technology computer-aided design (TCAD) simulation. In VFET, gate and extension lengths are not limited by the area of device because theses lengths are vertically located. The height of NP is assumed in 40 nm considering device fabrication method (top-down approach). According to the sizes of devices, we analyzed the performances of device such as total resistance, capacitance, intrinsic gate delay, sub-threshold swing (S.S), drain-induced barrier lowering (DIBL) and static noise margin (SNM). As the gate length becomes larger, the resistance should be smaller because the total height of NP is fixed in 40 nm. Also, when the channel thickness becomes thicker, the total resistance becomes smaller since the sheet resistances of channel and extension become smaller and the contact resistance becomes smaller due to the increasing contact area. In addition, as the length of channel pitch increases, the parasitic capacitance comes to be larger due to the increasing area of gate-drain and gate-source. The performance of RC delay is best in the shortest gate length (12 nm), the thickest channel (6 nm) and the shortest channel pitch (17 nm) owing to the reduced resistance and parasitic capacitance. However, the other performances such as DIBL, S.S, on/off ratio and SNM are worst because the short channel effect is highest in this situation. Also, we investigated the performance of the multi-channel device. As the number of channels increases, the performance of device and the reliability of SRAM improve because of reduced contact resistance, increased gate dimension and multi-channel compensation effect.

Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jaouad, A.; Aimez, V.; Aktik, Ç.; Bellatreche, K.; Souifi, A.

2004-05-01

Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators. The electrical properties of the fabricated MIS capacitors were analyzed using high-frequency capacitance-voltage and conductance-voltage measurements. The high concentration of hydrogen present during low-frequency plasma deposition of silicon nitride enhances the passivation of GaAs surface, leading to the unpinning of the Fermi level and to a good modulation of the surface potential by gate voltage. The electrical properties of the insulator-semiconductor interface are improved after annealing at 450 °C for 60 s, as a significant reduction of the interface fixed charges and of the interface states density is put into evidence. The minimum interface states density was found to be about 3×1011 cm-2 eV-1, as estimated by the Terman method. .

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanoto, H.; Loke, W. K.; Yoon, S. F.

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

Long-term radiation effects on GaAs solar cell characteristics

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Doviak, M. J.

1978-01-01

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

GaAs thin films and methods of making and using the same

DOEpatents

Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

2016-06-14

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

Improvements of MCT MBE Growth on GaAs

NASA Astrophysics Data System (ADS)

Ziegler, J.; Wenisch, J.; Breiter, R.; Eich, D.; Figgemeier, H.; Fries, P.; Lutz, H.; Wollrab, R.

2014-08-01

In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15- μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature ( T OP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current-voltage ( IV) characteristics on test diodes in a MWIR FPA.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications

NASA Astrophysics Data System (ADS)

Ajayan, J.; Nirmal, D.

2017-03-01

In this article, the DC and RF performance of a SiN passivated 20-nm gate length metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped InGaAs source/drain (S/D) regions have investigated using the Synopsys TCAD tool. The 20-nm enhancement-mode (E-mode) MHEMT device also features δ-doped sheets on either side of the In0.53Ga0.47As/InAs/In0.53Ga0.47As channel which exhibits a transconductance of 3100 mS/mm, cut-off frequency (fT) of 740 GHz and a maximum oscillation frequency (fmax) of 1040 GHz. The threshold voltage of the device is found to be 0.07 V. The room temperature Hall mobilities of the 2-dimensional sheet charge density are measured to be over 12,600 cm2/Vs with a sheet charge density larger than 3.6 × 1012 cm-2. These high-performance E-mode MHEMTs are attractive candidates for sub-millimetre wave applications such as high-resolution radars for space research, remote atmospheric sensing, imaging systems and also for low noise wide bandwidth amplifier for future communication systems.

Characteristics of III-V Semiconductor Devices at High Temperature

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

1994-01-01

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs

NASA Astrophysics Data System (ADS)

Huynh-Bao, Trong; Ryckaert, Julien; Sakhare, Sushil; Mercha, Abdelkarim; Verkest, Diederik; Thean, Aaron; Wambacq, Piet

2016-03-01

In this paper, we present a layout and performance analysis of logic and SRAM circuits for vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography (EUVL) processes are exploited to print the critical features: 32 nm gate pitch and 24 nm metal pitch. Layout architectures and patterning compromises for enabling the 5nm node will be discussed in details. A distinct standard-cell template for vertical FETs is proposed and elaborated for the first time. To assess electrical performances, a BSIM-CMG model has been developed and calibrated with TCAD simulations, which accounts for the quasi-ballistic transport in the nanowire channel. The results show that the inbound power rail layout construct for vertical devices could achieve the highest density while the interleaving diffusion template can maximize the port accessibility. By using a representative critical path circuit of a generic low power SoCs, it is shown that the VFET-based circuit is 40% more energy efficient than LFET designs at iso-performance. Regarding SRAMs, benefits given by vertical channel orientation in VFETs has reduced the SRAM area by 20%~30% compared to lateral SRAMs. A double exposures with EUV canner is needed to reach a minimum tip-to-tip (T2T) of 16 nm for middle-of-line (MOL) layers. To enable HD SRAMs with two metal layers, a fully self-aligned gate contact for LFETs and 2D routing of the top electrode for VFETs are required. The standby leakage of vertical SRAMs is 4~6X lower than LFET-based SRAMs at iso-performance and iso-area. The minimum operating voltage (Vmin) of vertical SRAMs is 170 mV lower than lateral SRAMs. A high-density SRAM bitcell of 0.014 um2 can be obtained for the iN5 technology node, which fully follows the SRAM scaling trend for the 45nm nodes and beyond.

Three-dimensional self-gated cardiac MR imaging for the evaluation of myocardial infarction in mouse model on a 3T clinical MR system.

PubMed

Zhang, Xiaoyong; Qiu, Bensheng; Wei, Zijun; Yan, Fei; Shi, Caiyun; Su, Shi; Liu, Xin; Ji, Jim X; Xie, Guoxi

2017-01-01

To develop and assess a three-dimensional (3D) self-gated technique for the evaluation of myocardial infarction (MI) in mouse model without the use of external electrocardiogram (ECG) trigger and respiratory motion sensor on a 3T clinical MR system. A 3D T1-weighted GRE sequence with stack-of-stars sampling trajectories was developed and performed on six mice with MIs that were injected with a gadolinium-based contrast agent at a 3T clinical MR system. Respiratory and cardiac self-gating signals were derived from the Cartesian mapping of the k-space center along the partition encoding direction by bandpass filtering in image domain. The data were then realigned according to the predetermined self-gating signals for the following image reconstruction. In order to accelerate the data acquisition, image reconstruction was based on compressed sensing (CS) theory by exploiting temporal sparsity of the reconstructed images. In addition, images were also reconstructed from the same realigned data by conventional regridding method for demonstrating the advantageous of the proposed reconstruction method. Furthermore, the accuracy of detecting MI by the proposed method was assessed using histological analysis as the standard reference. Linear regression and Bland-Altman analysis were used to assess the agreement between the proposed method and the histological analysis. Compared to the conventional regridding method, the proposed CS method reconstructed images with much less streaking artifact, as well as a better contrast-to-noise ratio (CNR) between the blood and myocardium (4.1 ± 2.1 vs. 2.9 ± 1.1, p = 0.031). Linear regression and Bland-Altman analysis demonstrated that excellent correlation was obtained between infarct sizes derived from the proposed method and histology analysis. A 3D T1-weighted self-gating technique for mouse cardiac imaging was developed, which has potential for accurately evaluating MIs in mice at 3T clinical MR system without the use of external

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

Growth and characteristics of p-type doped GaAs nanowire

NASA Astrophysics Data System (ADS)

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-05-01

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

Relation between trinucleotide GAA repeat length and sensory neuropathy in Friedreich's ataxia.

PubMed

Santoro, L; De Michele, G; Perretti, A; Crisci, C; Cocozza, S; Cavalcanti, F; Ragno, M; Monticelli, A; Filla, A; Caruso, G

1999-01-01

To verify if GAA expansion size in Friedreich's ataxia could account for the severity of sensory neuropathy. Retrospective study of 56 patients with Friedreich's ataxia selected according to homozygosity for GAA expansion and availability of electrophysiological findings. Orthodromic sensory conduction velocity in the median nerve was available in all patients and that of the tibial nerve in 46 of them. Data of sural nerve biopsy and of a morphometric analysis were available in 12 of the selected patients. The sensory action potential amplitude at the wrist (wSAP) and at the medial malleolus (m mal SAP) and the percentage of myelinated fibres with diameter larger than 7, 9, and 11 microm in the sural nerve were correlated with disease duration and GAA expansion size on the shorter (GAA1) and larger (GAA2) expanded allele in each pair. Pearson's correlation test and stepwise multiple regression were used for statistical analysis. A significant inverse correlation between GAA1 size and wSAP, m mal SAP, and percentage of myelinated fibres was found. Stepwise multiple regression showed that GAA1 size significantly affects electrophysiological and morphometric data, whereas duration of disease has no effect. The data suggest that the severity of the sensory neuropathy is probably genetically determined and that it is not progressive.

Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

PubMed

Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

2017-11-10

Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

Study of subband electronic structure of Si δ-doped GaAs using magnetotransport measurements in tilted magnetic fields

NASA Astrophysics Data System (ADS)

Li, G.; Hauser, N.; Jagadish, C.; Antoszewski, J.; Xu, W.

1996-06-01

Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle <30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

NASA Astrophysics Data System (ADS)

Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

1982-04-01

Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, J.A.; Doi, I.; Swart, J.W

2003-03-15

Silicon oxynitride (SiO{sub x}N{sub y}) and nitride (SiN{sub x}) insulators have been deposited or grown (with or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) plasmas on Si and/or GaAs substrates at room temperature (20 deg. C) and low pressures (up to 10 mTorr). Chemical bonding characteristics of the SiO{sub x}N{sub y} and SiN{sub x} films were evaluated using Fourier transform infrared spectrometry (FTIR). The profile measurements determined the film thickness, the deposition (or oxidation) rate and the etch rates in buffered HF (BHF). The refractive indexes and the thicknesses were determined by ellipsometry. The effectivemore » interface charge densities were determined by capacitance-voltage (C-V) measurements. With these processes and analyses, different films were obtained and optimized. Suitable gate insulators for metal-insulator-semiconductor (MIS) devices with low interface charge densities were developed: (a) SiN{sub x} films deposited by ECR-chemical vapor deposition (ECR-PECVD) on GaAs substrates; (b) SiO{sub x}N{sub y} insulators obtained by low-energy molecular nitrogen ion ({sup 28}N{sub 2}{sup +}) implantation (energy of 5 keV and dose of 1x10{sup 15}/cm{sup 2}) in Si substrates prior to high-density O{sub 2} ECR plasma oxidation; and (c) SiO{sub x}N{sub y} insulators grown (without silane in the gas mixture) by O{sub 2}/N{sub 2}/Ar ECR plasma 'oxynitridation'. Furthermore, some SiN{sub x} films also present very good masking characteristics for local oxidation of silicon process.« less

Interface demarcation in GaAs by current pulsing

NASA Technical Reports Server (NTRS)

Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

1990-01-01

GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

Microwave GaAs Integrated Circuits On Quartz Substrates

NASA Technical Reports Server (NTRS)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Time-resolved 3D MR velocity mapping at 3T: improved navigator-gated assessment of vascular anatomy and blood flow.

PubMed

Markl, Michael; Harloff, Andreas; Bley, Thorsten A; Zaitsev, Maxim; Jung, Bernd; Weigang, Ernst; Langer, Mathias; Hennig, Jürgen; Frydrychowicz, Alex

2007-04-01

To evaluate an improved image acquisition and data-processing strategy for assessing aortic vascular geometry and 3D blood flow at 3T. In a study with five normal volunteers and seven patients with known aortic pathology, prospectively ECG-gated cine three-dimensional (3D) MR velocity mapping with improved navigator gating, real-time adaptive k-space ordering and dynamic adjustment of the navigator acceptance criteria was performed. In addition to morphological information and three-directional blood flow velocities, phase-contrast (PC)-MRA images were derived from the same data set, which permitted 3D isosurface rendering of vascular boundaries in combination with visualization of blood-flow patterns. Analysis of navigator performance and image quality revealed improved scan efficiencies of 63.6%+/-10.5% and temporal resolution (<50 msec) compared to previous implementations. Semiquantitative evaluation of image quality by three independent observers demonstrated excellent general image appearance with moderate blurring and minor ghosting artifacts. Results from volunteer and patient examinations illustrate the potential of the improved image acquisition and data-processing strategy for identifying normal and pathological blood-flow characteristics. Navigator-gated time-resolved 3D MR velocity mapping at 3T in combination with advanced data processing is a powerful tool for performing detailed assessments of global and local blood-flow characteristics in the aorta to describe or exclude vascular alterations. Copyright (c) 2007 Wiley-Liss, Inc.

Suppression of Overhauser Effect in the Exciton-Nuclear Spin System of GaAs Quantum Dot

DTIC Science & Technology

2001-06-01

the exciton-nuclear spin system of GaAs quantum dot V L. Korenevt, I. A. Merkulovt, D. Gammonj, Al. L. Efrosj, T. A. Kennedyl, M. Rosenj, D. S ...Katzerj and S . W. Brown§ t loffe Physico-Technical Institute, St Petersburg, Russia I Naval Research Laboratory, Washington DC 20375, USA § NIST...2.5 s -1 for N - 105 nuclei in the quantum dot [51 and rb - 0.1 ns [9]. The estimation is in agreement with experiment (Texp ; 3 s ). Coupling of

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Advanced GaAs Process Modeling. Volume 1

DTIC Science & Technology

1989-05-01

COSATI CODES 18 . SUBJECT TERMS (Continue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Gallium Arsenide, MESFET, Process...Background 9 3.2 Model Calculations 10 3.3 Conclusions 17 IV. ION-IMPLANTATION INTO GaAs PROFILE DETERMINATION 18 4.1 Ion Implantation Profile...Determination in GaAs 18 4.1.1. Background 18 4.1.2. Experimental Measurements 20 4.1.3. Results 22 4.1.3.1 Ion-Energy Dependence 22 4.1.3.2. Tilt and Rotation

Driving qubit phase gates with sech shaped pulses

NASA Astrophysics Data System (ADS)

Long, Junling; Ku, Hsiang-Sheng; Wu, Xian; Lake, Russell; Barnes, Edwin; Economou, Sophia; Pappas, David

As shown in 1932 by Rozen and Zener, the Rabi model has a unique solution whereby, for a given pulse length or amplitude, a sech(t/sigma) shaped pulse can be used to drive complete oscillations around the Bloch sphere that are independent of detuning with only a resultant detuning-dependent phase accumulation. Using this property, single qubit phase gates and two-qubit CZ gates have been proposed. In this work we explore the effect of different drive pulse shapes, i.e. square, Gaussian, and sech, as a function of detuning for Rabi oscillations of a superconducting transmon qubit. An arbitrary, single-qubit phase gate is demonstrated with the sech(t/sigma) pulse, and full tomography is performed to extract the fidelity. This is the first step towards high fidelity, low leakage two qubit CZ gates, and illustrates the efficacy of using analytic solutions of the qubit drive prior to optimal pulse shaping.

The 20 GHz GaAs monolithic power amplifier module development

NASA Technical Reports Server (NTRS)

1984-01-01

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

NASA Astrophysics Data System (ADS)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

Free Carrier Induced Spectral Shift for GaAs Filled Metallic Hole Arrays

DTIC Science & Technology

2012-03-13

Bahae , G. I . Stegeman, K. Al-hemyari, J. S. Aitchison, and C. N. Ironside, “Limitation due to three-photon absorption on the useful spectral range...Free carrier induced spectral shift for GaAs filled metallic hole arrays Jingyu Zhang 1,2,* , Bin Xiang 3 , Mansoor Sheik- Bahae 4 , and S. R. J...OCIS codes: (310.6628) Subwavelength structures;(190.4350) Nonlinear optics at surfaces References and links 1. J. M. Luther, P. K. I . Jain, T. Ewers

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

PubMed

Egard, M; Johansson, S; Johansson, A-C; Persson, K-M; Dey, A W; Borg, B M; Thelander, C; Wernersson, L-E; Lind, E

2010-03-10

In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.

Photon counting microstrip X-ray detectors with GaAs sensors

NASA Astrophysics Data System (ADS)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Laser Induced Electrodeposition on Polyimide and GaAs Substrates

DTIC Science & Technology

1983-10-01

6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Amplification in Double Heterostructure GaAs Lasers.

DTIC Science & Technology

1981-03-15

done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

GaAs Surface Passivation for Device Applications.

DTIC Science & Technology

1981-12-01

Ga203.’" . QI. a) / b) x 2.5 •• 24 21 18 As3d a) b) x 2. / 0 II 2 46 43 40 BINDING ENERGY (eV) Fig. 3 XPS spectra from a Ga2O3 covered GaAs surface of Ga...wU 24 21 Gas 18 SAs3d As2O3 ) .. 46 43 40 BINDING ENERGY (e) Fig. 4 XPS spectra from a AsJ03- Ga2O3 covered GaAs surface of Ga 3d (upper panel) and As

Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

1986-01-01

A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

NASA Technical Reports Server (NTRS)

Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

1989-01-01

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

NASA Astrophysics Data System (ADS)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, M. Y.; Haas, T. W.

1990-06-01

We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241.

DTIC Science & Technology

1992-09-14

AIGaAs-GaAs QUANTUM WELLS GROWN ON LOW TEMPERATURE GaAs 239 Y. Hwang, D. Zhang, T. Zhang, M. Mytych, and R.M. Kolbas MOLECULAR BEAM EPITAXY OF LOW...GaA/ quantum wells : 24i howvever, in our case. AIks layers were not introduced. Formation (if these rows is most prolf,.+l influenced hb the diffusimon...regions. Preliminary investigations into this method have been performed using GaAs quantum wells between thick AIGaAs barriers as shown in Fig. 7. This

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

NASA Technical Reports Server (NTRS)

Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

NASA Astrophysics Data System (ADS)

Moglestue, C.; Buot, F. A.; Anderson, W. T.

1995-08-01

The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts.

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model.

PubMed

Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Te Riele, Hein; Pook, Mark A

2012-04-01

Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. Copyright © 2012 Elsevier Inc. All rights reserved.

The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model

PubMed Central

Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; te Riele, Hein; Pook, Mark A.

2013-01-01

Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. PMID:22289650

Oxygen in GaAs - Direct and indirect effects

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

1984-01-01

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Phase transformation of GaAs at high pressures and temperatures

NASA Astrophysics Data System (ADS)

Ono, Shigeaki; Kikegawa, Takumi

2018-02-01

The high-pressure behavior of gallium arsenide, GaAs, has been investigated using an in-situ X-ray powder diffraction technique in a diamond anvil cell combined with a resistance heating method, at pressures and temperatures up to 25 GPa and 1000 K respectively. The pressure-induced phase transition from a zincblende to an orthorhombic (Cmcm) structure was observed. This transition occurred at 17.3 GPa and at room temperature, where a negative temperature dependence for this transition was confirmed. The transition boundary was determined to be P (GPa) = 18.0 - 0.0025 × T (K).

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

GaAs Spectrometer for Electron Spectroscopy at Europa

NASA Astrophysics Data System (ADS)

Lioliou, G.; Barnett, A. M.

2016-12-01

We propose a GaAs based electron spectrometer for a hypothetical future mission orbiting Europa. Previous observations at Europa's South Pole with the Hubble Space Telescope of hydrogen Lyman-α and oxygen OI 130.4 nm emissions were consistent with water vapor plumes [Roth et al., 2014, Science 343, 171]. Future observations and analysis of plumes on Europa could provide information about its subsurface structure and the distribution of liquid water within its icy shells [Rhoden at al. 2015, Icarus 253, 169]. In situ low energy (1keV - 100keV) electron spectroscopy along with UV imaging either in situ or with the Hubble Space Telescope Wide Field Camera 3 or similar would allow verification of the auroral observations being due to electron impact excitation of water vapor plumes. The proposed spectrometer includes a novel GaAs p+-i-n+ photodiode and a custom-made charge-sensitive preamplifier. The use of an early prototype GaAs detector for direct electron spectroscopy has already been demonstrated in ground based applications [Barnett et al., 2012, J. Instrum. 7, P09012]. Based on previous radiation hardness measurements of GaAs, the expected duration of the mission without degradation of the detector performance is estimated to be 4 months. Simulations and laboratory experiments characterising the detection performance of the proposed system are presented.

Photo-recovery of electron-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Meulenberg, Andrew

1995-01-01

The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

Defect interactions in GaAs single crystals

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs

NASA Astrophysics Data System (ADS)

Ponomarev, D. S.; Lavrukhin, D. V.; Yachmenev, A. E.; Khabibullin, R. A.; Semenikhin, I. E.; Vyurkov, V. V.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2018-04-01

We report on the proposal and the theoretical and experimental studies of the terahertz hot-electron bolometer (THz HEB) based on a gated GaAs structure like the field-effect transistor with the array of parallel Sn nanothreads (Sn-NTs). The operation of the HEB is associated with an increase in the density of the delocalized electrons due to their heating by the incoming THz radiation. The quantum and the classical device models were developed, the quantum one was based on the self-consistent solution of the Poisson and Schrödinger equations, the classical model involved the Poisson equation and density of states omitting quantization. We calculated the electron energy distributions in the channels formed around the Sn-NTs for different gate voltages and found the fraction of the delocalized electrons propagating across the energy barriers between the NTs. Since the fraction of the delocalized electrons strongly depends on the average electron energy (effective temperature), the proposed THz HEB can exhibit an elevated responsivity compared with the HEBs based on more standard heterostructures. Due to a substantial anisotropy of the device structure, the THz HEB may demonstrate a noticeable polarization selectivity of the response to the in-plane polarized THz radiation. The features of the THz HEB might be useful in their practical applications in biology, medicine and material science.

Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

PubMed

Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

2011-02-09

We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

Transient GaAs plasmonic metasurfaces at terahertz frequencies

DOE PAGES

Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; ...

2016-12-09

Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to moremore » complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.« less

Design consideration of δ-doping channels for high-performance n + - GaAs / p + -InGaP/n-GaAs camel-gate field effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Chen, Jeng-Shyan; Chu, Yu-Jui

2005-01-01

The influence of δ-doping channels on the performance of n +-GaAs/p +-InGaP/n-GaAs camel-gate field effect transistors is investigated by theoretical analysis and experimental results. The depleted pn junction of the camel gate and the existence of considerable conduction band discontinuity at the InGaP/GaAs heterojunction enhance the potential barrier height and the forward gate voltage. As the concentration-thickness products of the n-GaAs layer and δ-doping layer are fixed, the higher δ-doping device exhibits a higher potential barrier height, a larger drain current, and a broader gate voltage swing, whereas the transconductance is somewhat lower. For a n +=5.5×10 12 cm -2δ-doping device, the experimental result exhibits a maximum transconductance of 240 mS/mm and a gate voltage swing of 3.5 V. Consequently, the studied devices provide a good potential for large signal and linear circuit applications.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

NASA Astrophysics Data System (ADS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-12-01

Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

Paths to light trapping in thin film GaAs solar cells.

PubMed

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

DTIC Science & Technology

1994-02-28

from the bandgap discontinuity (as was proposed in my publications [1,2]). Also, by using superlattice structure A1GaAs / GaAs: Er / AlGaAs, we could...n ipact ightemiting evic 10 3. The AlGaAs/GaAs: Er/A1GaAs superlattice structure. For the first time we designed the unipolar n’ - superlattice - n...structure as shown in Figure 5. The GaAs: Er/Alo.45Gao.55As superlattice was grown by MBE on an n’ GaAs: Si substrate. It consisted of 60 periods of

Crystal growth of GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

1984-01-01

It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

A model for proton-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

1982-01-01

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

High efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1977-01-01

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Optimal control of universal quantum gates in a double quantum dot

NASA Astrophysics Data System (ADS)

Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.

2018-06-01

We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Highly efficient X-range AlGaN/GaN power amplifier

NASA Astrophysics Data System (ADS)

Tural'chuk, P. A.; Kirillov, V. V.; Osipov, P. E.; Vendik, I. B.; Vendik, O. G.; Parnes, M. D.

2017-09-01

The development of microwave power amplifiers (PAs) based on transistors with an AlGaN/GaN heterojunction are discussed in terms of the possible enhancement of their efficiency. The main focus is on the synthesis of the transforming circuits, which ensure the reactive load at the second- and third-harmonic frequencies and complex impedance at the fundamental frequency. This makes it possible to optimize the complex operation mode of a PA; i.e., to reduce the scattering power and enhance the efficiency. A microwave PA based on the Schottky-barrier-gate field-effect transistor with 80 electrodes based on the GaN pHEMT transistor with a gate length of 0.25 nm and a gate width of 125 nm is experimentally investigated. The amplifier has a pulse output power of 35 W and a power-added efficiency of at least 50% at a working frequency of 9 GHz.

Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, Ming Y.; Haas, T. W.

1990-10-01

We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Namozov, B. R.; Pak, P. E.; Kusrayev, Yu. G.

2014-03-01

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T 1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n D = 9 × 1016 cm-3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T 1 with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.

DFT algorithms for bit-serial GaAs array processor architectures

NASA Technical Reports Server (NTRS)

Mcmillan, Gary B.

1988-01-01

Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Optical Orientation of Mn2+ Ions in GaAs in Weak Longitudinal Magnetic Fields

NASA Astrophysics Data System (ADS)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

2011-04-01

We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

Realization of the three-qubit quantum controlled gate based on matching Hermitian generators

NASA Astrophysics Data System (ADS)

Gautam, Kumar; Rawat, Tarun Kumar; Parthasarathy, Harish; Sharma, Navneet; Upadhyaya, Varun

2017-05-01

This paper deals with the design of quantum unitary gate by matching the Hermitian generators. A given complicated quantum controlled gate is approximated by perturbing a simple quantum system with a small time-varying potential. The basic idea is to evaluate the generator H_φ of the perturbed system approximately using first-order perturbation theory in the interaction picture. H_φ depends on a modulating signal φ(t){:} 0≤t≤T which modulates a known potential V. The generator H_φ of the given gate U_g is evaluated using H_g=ι log U_g. The optimal modulating signal φ(t) is chosen so that \\Vert H_g - H_φ \\Vert is a minimum. The simple quantum system chosen for our simulation is harmonic oscillator with charge perturbed by an electric field that is a constant in space but time varying and is controlled externally. This is used to approximate the controlled unitary gate obtained by perturbing the oscillator with an anharmonic term proportional to q^3. Simulations results show significantly small noise-to-signal ratio. Finally, we discuss how the proposed method is particularly suitable for designing some commonly used unitary gates. Another example was chosen to illustrate this method of gate design is the ion-trap model.

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

PubMed Central

Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

2007-01-01

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Comment on ''Reassessment of space-change and central-cell scattering contributions to GaAs electron mobility''

NASA Astrophysics Data System (ADS)

Stringfellow, G. B.

1982-07-01

Walukiewicz et al.1 have recently stated that previously reported contributions to the electron mobility of GaAs from space-charge and/or central-cell scattering are in fact insignificant, and that reports of a T-1/2 term in the mobility2,3 are artifacts due to the assumption of Mathiessen's rule. This conclusion is an overstatement of their results and in fact demonstrably incorrect. First, an analysis of the data reported by Stringfellow2 and Stringfellow and Kuenzel3 as well as others has already been performed by Chattopadhyay et al.4 without assuming Mathiessen's rule. Their conclusion is that central-cell scattering is indeed significant. Second, the particular data analyzed by Walukiewicz et al. are in fact acknowledged in Ref. 2 to have very little T-1/2 scattering. The magnitude of the scattering cross section for T-1/2 scattering, SCA, for other samples is more than an order of magnitude larger, too large to be ascribed to errors inherent in using Mathiessen's rule. Experimental data convincingly demonstrate this. The mobility versus temperature curves are lower, especially at higher temperatures, for C as opposed to Zn- or Ge-doped samples where all have the same values of ND+NA (see Fig. 2 of Ref. 3). In addition, recently published data5 for MBE GaAs grown with different C doping levels show that for constant ND+NA, SCA is three times larger for the more highly C doped samples. This could not be due to errors inherent in the use of Mathiessen's rule. For these samples C clearly introduces an increase in the T-1/2 scattering which is not observed for other acceptors. ufc15xr 1W. Walukiewicz, J. Lagowski, and H. C. Gatos, J. Appl. Phys. 52, 5853 (1981). 2G. B. Stringfellow, J. Appl. Phys. 50, 4178 (1979). 3G. B. Stringfellow and H. Kuenzel, J. Appl. Phys. 51, 3254 (1980). 4D. Chattopadhyay, H. J. Queisser, and G. B. Stringfellow, J. Phys. Soc. Jpn. 49, Suppl. A, 293 (1980). 5G. B. Stringfellow, R. Stall, and W. Koschel, Appl. Phys. Lett. 38, 156 (1981

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Enhancement of conductance of GaAs sub-microwires under external stimuli

NASA Astrophysics Data System (ADS)

Qu, Xianlin; Deng, Qingsong; Zheng, Kun

2018-03-01

Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1985-01-01

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Blueish green photoluminescence from nitrided GaAs(100) surfaces

NASA Astrophysics Data System (ADS)

Shimaoka, Goro; Udagawa, Takashi

1999-04-01

Optical and structural studies were made on the Si-doped (100)GaAs surfaces nitrided at a temperature between 650° and 750°C for 15 min in the flowing NH 3 gas. The wavelength of photoluminescence (PL) spectra were observed to be shortened from 820 nm of the GaAs nitrided at 650°C with increasing nitridation temperature. Blueish green PL with wavelengths of approx. 490 nm and 470 nm were emitted from the nitrided surfaces at 700° and 750°C, respectively. Results of AES and SIMS indicated that the surfaces are nitrided as GaAs 1- xN x, (0< x≤1) alloy layer, and the nitrided region also tended to increase as the temperature raised. High-resolution transmission electron microscopic (HRTEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) results showed that films peeled off from the nitrided surfaces consisted mainly of hexagonal, wurtzite-type gallium nitride (GaN) with stacking faults and microtwins.

Charge movement in gating-locked HCN channels reveals weak coupling of voltage sensors and gate.

PubMed

Ryu, Sujung; Yellen, Gary

2012-11-01

HCN (hyperpolarization-activated cyclic nucleotide gated) pacemaker channels have an architecture similar to that of voltage-gated K(+) channels, but they open with the opposite voltage dependence. HCN channels use essentially the same positively charged voltage sensors and intracellular activation gates as K(+) channels, but apparently these two components are coupled differently. In this study, we examine the energetics of coupling between the voltage sensor and the pore by using cysteine mutant channels for which low concentrations of Cd(2+) ions freeze the open-closed gating machinery but still allow the sensors to move. We were able to lock mutant channels either into open or into closed states by the application of Cd(2+) and measure the effect on voltage sensor movement. Cd(2+) did not immobilize the gating charge, as expected for strict coupling, but rather it produced shifts in the voltage dependence of voltage sensor charge movement, consistent with its effect of confining transitions to either closed or open states. From the magnitude of the Cd(2+)-induced shifts, we estimate that each voltage sensor produces a roughly three- to sevenfold effect on the open-closed equilibrium, corresponding to a coupling energy of ∼1.3-2 kT per sensor. Such coupling is not only opposite in sign to the coupling in K(+) channels, but also much weaker.

GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

DTIC Science & Technology

2007-11-01

front and back side processed, unintentionally doped bulk gallium -arsenic (GaAs) Schottky detectors and determined that GaAs detectors with a large...a few materials that fulfill these requirements are gallium -arsenic (GaAs) and cadmium-zinc-tellurium (CdZnTe or CZT). They are viable alternative...Whitehill, C.; Pospíšil, S.; Wilhem, I.; Doležal, Z.; Juergensen, H.; Heuken, M. Development of low-pressure vapour -phase epitaxial GaAs for medical imaging

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

NASA Astrophysics Data System (ADS)

Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

2006-05-01

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

Optical orientation of Mn2+ ions in GaAs in weak longitudinal magnetic fields.

PubMed

Akimov, I A; Dzhioev, R I; Korenev, V L; Kusrayev, Yu G; Sapega, V F; Yakovlev, D R; Bayer, M

2011-04-08

We report on optical orientation of Mn2+ ions in bulk GaAs subject to weak longitudinal magnetic fields (B≤100  mT). A manganese spin polarization of 25% is directly evaluated by using spin-flip Raman scattering. The dynamical Mn2+ polarization occurs due to the s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence reveals a nontrivial electron spin dynamics, where the oriented Mn2+ ions tend to stabilize the electron spins.

Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

PubMed Central

2014-01-01

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

The ZnSe(110) puzzle - Comparison with GaAs(110)

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

1984-01-01

The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Bubble gate for in-plane flow control.

PubMed

Oskooei, Ali; Abolhasani, Milad; Günther, Axel

2013-07-07

We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

Flood Plain Information, Little Black Creek, Towns of Gates, Chili and Ogden, Monroe County, New York.

DTIC Science & Technology

1975-08-01

tPVRTTW’VRroD-cVER ED Flood Plain Information Little Black Creek " T Final Townof Gates, Chili ano Ogden) /_ __...._’ Monroe County, New r7k d. 6. PERFORMING...mad Identify by block number) ) /This report on the Little Black Creek Flood Plain within the Town of Chili , Gates, and Ogden in Monroe County has...16 Future flood heights at Gates, Chili , Ogden Sewage Treatment Plant

GaAs laser diode pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Conant, L. C.; Reno, C. W.

1974-01-01

A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

Effects of ultrathin oxides in conducting MIS structures on GaAs

NASA Technical Reports Server (NTRS)

Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

1978-01-01

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

PubMed

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

PubMed Central

2012-01-01

We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail. PMID:23043754

A novel low temperature soft reflow process for the fabrication of deep-submicron (<0.35 μm) T-gate pseudomorphic high electron mobility transistor structures

NASA Astrophysics Data System (ADS)

Ian, Ka Wa; Exarchos, Michael; Missous, Mohamed

2013-02-01

We report a new and simple low temperature soft reflow process using solvent vapour. The combination of this soft reflow and conventional i-line lithography enables low cost, highly efficient fabrication at the deep-submicron scale. Compared to the conventional thermal reflow process, the key benefits of the new soft reflow process are its low temperature operation (<50 °C), greater shrinkage of the structure size (up to 75%) and better controllability. Gate openings reflowed from 1 μm to 250 nm have been routinely and reproducibly achieved by utilizing the saturation characteristics of the process. The feasibility of this soft reflow process is demonstrated in the fabrication of a 350 nm T-gate pseudomorphic high electron mobility transistor. By shrinking the gate length by a factor of three (from a 1 μm initial opening), the output current is improved by 60% (500 mA mm-1 from 300 mA mm-1) and fT and fMAX are increased to 70 GHz (from 20 GHz) and 120 GHz (from 40 GHz) respectively. The proposed soft reflow could potentially be applied on other compatible substrates such as polymer based material for organic or thin film devices, potentially leading to many new possible applications.

Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo

2017-08-01

The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device.

Modified energetics and growth kinetics on H-terminated GaAs (110)

NASA Astrophysics Data System (ADS)

Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

2013-10-01

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Large Signal Modeling and Analysis of the GaAs MESFET.

DTIC Science & Technology

1986-07-09

various dimensions and physical parameters. A powerful computer aided design system can be developed by automating the circuit element and parameter...circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly...34. -. ’ Abstract The purpose of this work is to develop a large signal signal lumped circuit model of the GaAs MESFET to aid In the designs of microwave MESFET

Electron-spin dynamics in Mn-doped GaAs using time-resolved magneto-optical techniques

NASA Astrophysics Data System (ADS)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Zhukov, E. A.; Yakovlev, D. R.; Bayer, M.

2009-08-01

We study the electron-spin dynamics in p -type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin-relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin-relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

2009-01-01

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Structural and electronic properties of isovalent boron atoms in GaAs

NASA Astrophysics Data System (ADS)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the <110 > directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

SU-E-T-217: Intrinsic Respiratory Gating in Small Animal CT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Y; Smith, M; Mistry, N

Purpose: Preclinical animal models of lung cancer can provide a controlled test-bed for testing dose escalation or function-based-treatment-planning studies. However, to extract lung function, i.e. ventilation, one needs to be able to image the lung at different phases of ventilation (in-hale / ex-hale). Most respiratory-gated imaging using micro-CT involves using an external ventilator and surgical intervention limiting the utility in longitudinal studies. A new intrinsic respiratory retrospective gating method was developed and tested in mice. Methods: A fixed region of interest (ROI) that covers the diaphragm was selected on all projection images to estimate the mean intensity (M). The meanmore » intensity depends on the projection angle and diaphragm position. A 3-point moving average (A) of consecutive M values: Mpre, Mcurrent and Mpost, was calculated to be subtracted from Mcurrent. A fixed threshold was used to enable amplitude based sorting into 4 different phases of respiration. Images at full-inhale and end-exhale phases of respiration were reconstructed using the open source OSCaR. Lung volumes estimated at the 2 phases of respiration were validated against literature values. Results: Intrinsic retrospective gating was accomplished without the use of any external breathing waveform. While projection images were acquired at 360 different angles. Only 138 and 104 projections were used to reconstruct images at full-inhale and end-exhale. This often results in non-uniform under-sampled angular projections leading to some minor streaking artifacts. The calculated expiratory, inspiratory and tidal lung volumes correlated well with the values known from the literature. Conclusion: Our initial result demonstrates an intrinsic gating method that is suitable for flat panel cone beam small animal CT systems. Reduction in streaking artifacts can be accomplished by oversampling the data or using iterative reconstruction methods. This initial experience will enable

Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation

NASA Astrophysics Data System (ADS)

Alvarez, J.; Kleider, J.-P.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Mariucci, L.; Rubini, S.

2011-08-01

The electrical properties of untreated and hydrogen-irradiated GaAs1-xNx are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs1-xNx increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 °C of H-irradiated GaAs1-xNx restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs1-xNx (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here.

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Testing a GaAs cathode in SRF gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Kewisch, J.; Ben-Zvi, I.

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs,more » we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the

Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET

NASA Astrophysics Data System (ADS)

Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.; Abouelatta, Mohamed

2015-10-01

In this paper, we have investigated the effect of gate overlapping-on-drain on the ambipolar behavior and high frequency performance of tunnel CNTFET (T-CNTFET). It is found that gate overlapping-on-drain suppresses the ambipolar behavior and improves OFF-state current. The simulation results show that there is an optimum choice for the overlapped length. On the other hand, this overlap deteriorates the high frequency performance. The high frequency figure of merit is analyzed in terms of the unit-gain cutoff frequency (fT). Further, we propose two different approaches to improve the high frequency performance of the overlapped T-CNTFET. The first one is based on inserting a high-dielectric constant material below the overlapped part of the gate and the second is based on depositing a different work function gate metal for the overlapped region. The two solutions show very good improvement in the high frequency performance with maintaining the suppression of the ambipolar characteristics.

Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

NASA Astrophysics Data System (ADS)

Zytkiewicz, Z. R.; Dobosz, D.; Pawlowska, M.

1999-05-01

Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substrates by liquid phase epitaxy are reported. We show that by introducing Si, Sn or Te impurities to the Ga-As solution the vertical growth rate is reduced while the lateral growth rate is significantly enhanced, which leads to a growth habit modification. Furthermore, the impurity incorporation into the growing layer is different on the upper and side surfaces of the ELO, reflecting the fundamental differences between the lateral and vertical growth modes. This phenomenon can be applied for studying the temporal development of ELO layers.

Electric field effects on the optical properties of buckled GaAs monolayer

NASA Astrophysics Data System (ADS)

Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.

2018-04-01

Buckled GaAs monolayer has a direct band gap semiconductor with energy gap of 1.31 eV in the absence of electric field. When we applied transverse electric field, the value of band gap decreases with increasing of electric field strength. In our previous work [1], it is observed that the buckled GaAs monolayer becomes metallic at 1.3 V/Å. In the present work, we investigate the optical properties such as photon energy-dependent dielectric functions, extinction coefficient, refractive index, absorption spectrum and reflectivity of buckled GaAs monolayer in the semiconducting phase i.e. absence of external electric field and metallic phase i.e. presence of external electric field using density functional theory.

Nuclear spin warm up in bulk n -GaAs

NASA Astrophysics Data System (ADS)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

2016-08-01

We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2013 CFR

2013-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2012 CFR

2012-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2010 CFR

2010-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2014 CFR

2014-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

Code of Federal Regulations, 2011 CFR

2011-10-01

... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports do...

GaAs Solar Cell Radiation Handbook

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.

1996-01-01

History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

Interface dynamics and crystal phase switching in GaAs nanowires

NASA Astrophysics Data System (ADS)

Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M.

2016-03-01

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

Periodic annealing of radiation damage in GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Knechtli, R. C.; Kamath, G. S.

1980-01-01

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Interface dynamics and crystal phase switching in GaAs nanowires.

PubMed

Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A; Ross, Frances M

2016-03-17

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Analysis of power gating in different hierarchical levels of 2MB cache, considering variation

NASA Astrophysics Data System (ADS)

Jafari, Mohsen; Imani, Mohsen; Fathipour, Morteza

2015-09-01

This article reintroduces power gating technique in different hierarchical levels of static random-access memory (SRAM) design including cell, row, bank and entire cache memory in 16 nm Fin field effect transistor. Different structures of SRAM cells such as 6T, 8T, 9T and 10T are used in design of 2MB cache memory. The power reduction of the entire cache memory employing cell-level optimisation is 99.7% with the expense of area and other stability overheads. The power saving of the cell-level optimisation is 3× (1.2×) higher than power gating in cache (bank) level due to its superior selectivity. The access delay times are allowed to increase by 4% in the same energy delay product to achieve the best power reduction for each supply voltages and optimisation levels. The results show the row-level power gating is the best for optimising the power of the entire cache with lowest drawbacks. Comparisons of cells show that the cells whose bodies have higher power consumption are the best candidates for power gating technique in row-level optimisation. The technique has the lowest percentage of saving in minimum energy point (MEP) of the design. The power gating also improves the variation of power in all structures by at least 70%.

Disruption of Higher Order DNA Structures in Friedreich’s Ataxia (GAA)n Repeats by PNA or LNA Targeting

PubMed Central

Bergquist, Helen; Rocha, Cristina S. J.; Álvarez-Asencio, Rubén; Nguyen, Chi-Hung; Rutland, Mark. W.; Smith, C. I. Edvard; Good, Liam; Nielsen, Peter E.; Zain, Rula

2016-01-01

Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigenetic modifications. With the aim of interfering with higher order H-DNA (like) DNA structures within pathological (GAA)n expansions, we examined sequence-specific interaction of peptide nucleic acid (PNA) with (GAA)n repeats of different lengths (short: n=9, medium: n=75 or long: n=115) by chemical probing of triple helical and single stranded regions. We found that a triplex structure (H-DNA) forms at GAA repeats of different lengths; however, single stranded regions were not detected within the medium size pathological repeat, suggesting the presence of a more complex structure. Furthermore, (GAA)4-PNA binding of the repeat abolished all detectable triplex DNA structures, whereas (CTT)5-PNA did not. We present evidence that (GAA)4-PNA can invade the DNA at the repeat region by binding the DNA CTT strand, thereby preventing non-canonical-DNA formation, and that triplex invasion complexes by (CTT)5-PNA form at the GAA repeats. Locked nucleic acid (LNA) oligonucleotides also inhibited triplex formation at GAA repeat expansions, and atomic force microscopy analysis showed significant relaxation of plasmid morphology in the presence of GAA-LNA. Thus, by inhibiting disease related higher order DNA structures in the Frataxin gene, such PNA and LNA oligomers may have potential for discovery of drugs aiming at recovering Frataxin expression. PMID:27846236

A comparison of GaAs and Si hybrid solar power systems

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Roberts, A. S., Jr.

1977-01-01

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

Basic mechanisms study for MIS solar cell structures on GaAs

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1978-01-01

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2

NASA Astrophysics Data System (ADS)

Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

2017-06-01

Using ab initio calculations, a simple model for GaAs1-xNx vapor-phase epitaxy on (100) surface of GaAs was created. By studying As2 and H2 molecules adsorptions and As/N atom substitutions on (100) GaAs surfaces, we obtain a relative stability diagram of all stable surfaces under varying As2, H2, and N2 conditions. We previously proved that this model could describe the vapor-phase epitaxy of GaAs1-x Nx with simple, fully decomposed, precursors. In this paper, we show that in more complex reaction conditions using monomethylhydrazine (MMHy), and dimethylhydrazine (DMHy), it is still possible to use our model to obtain an accurate description of the temperature and pressure stability domains for each surfaces, linked to chemical beam epitaxy (CBE) growth conditions. Moreover, the different N-incorporation regimes observed experimentally at different temperature can be explain and predict by our model. The use of MMHy and DMHy precursors can also be rationalized. Our model should then help to better understand the conditions needed to obtain an high quality GaAs1-xNx using vapor-phase epitaxy.

Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

NASA Astrophysics Data System (ADS)

Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

2018-02-01

Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

PubMed

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator

NASA Astrophysics Data System (ADS)

Resfa, A.; Smahi, Bourzig Y.; Menezla, Brahimi R.

2011-12-01

The current through a metal—semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of the semiconductor carriers in metal, thermionic emission-diffusion (TED) of carriers through a Schottky gate, and a mechanical quantum that pierces a tunnel through the gate. The system was solved by using a coupled Poisson—Boltzmann algorithm. Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier majority of the metal—semiconductor junction to the semiconductor contacts. The insulating layer converts the MS device in an MIS device and has a strong influence on its current—voltage (I—V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behaviour of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase in the process of thermionic electrons and holes, which will in turn act on the I—V characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I—V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.

tRNA tKUUU, tQUUG, and tEUUC wobble position modifications fine-tune protein translation by promoting ribosome A-site binding.

PubMed

Rezgui, Vanessa Anissa Nathalie; Tyagi, Kshitiz; Ranjan, Namit; Konevega, Andrey L; Mittelstaet, Joerg; Rodnina, Marina V; Peter, Matthias; Pedrioli, Patrick G A

2013-07-23

tRNA modifications are crucial to ensure translation efficiency and fidelity. In eukaryotes, the URM1 and ELP pathways increase cellular resistance to various stress conditions, such as nutrient starvation and oxidative agents, by promoting thiolation and methoxycarbonylmethylation, respectively, of the wobble uridine of cytoplasmic (tK(UUU)), (tQ(UUG)), and (tE(UUC)). Although in vitro experiments have implicated these tRNA modifications in modulating wobbling capacity and translation efficiency, their exact in vivo biological roles remain largely unexplored. Using a combination of quantitative proteomics and codon-specific translation reporters, we find that translation of a specific gene subset enriched for AAA, CAA, and GAA codons is impaired in the absence of URM1- and ELP-dependent tRNA modifications. Moreover, in vitro experiments using native tRNAs demonstrate that both modifications enhance binding of tK(UUU) to the ribosomal A-site. Taken together, our data suggest that tRNA thiolation and methoxycarbonylmethylation regulate translation of genes with specific codon content.

High purity low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1982-01-01

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

NASA Astrophysics Data System (ADS)

Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

2010-03-01

A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

Radiation testing of GaAs on CRRES and LIPS experiment

NASA Technical Reports Server (NTRS)

Trumble, T. M.; Masloski, K.

1984-01-01

The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)

NASA Astrophysics Data System (ADS)

McLean, A. B.; Terminello, L. J.; McFeely, F. R.

1989-12-01

The adsorption of atomic F on the cleaved GaAs(110) surface has been studied with use of high-resolution core-level photoelectron spectroscopy by exposing the GaAs(110) surfaces to XeF2, which adsorbs dissociatively, leaving atomic F behind. This surface reaction produces two chemically shifted components in the Ga 3d core-level emission which are attributed to an interfacial monofluoride and a stable trifluoride reaction product, respectively. The As 3d core level develops only one chemically shifted component and from its exposure-dependent behavior it is attributed to an interfacial monofluoride. Least-squares analysis of the core-level line shapes revealed that (i) the F bonds to both the anion and the cation , (ii) the GaF3 component (characteristic of strong interfacial reaction) and the surface core-level shifted component (characteristic of a well ordered, atomically clean surface) are present together over a relatively large range of XeF2 exposures, and (iii) it is the initial disruption of the GaAs(110) surface that is the rate-limiting step in this surface reaction. These results are compared with similar studies of Cl and O adsorption on GaAs(110).

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Enhanced second-harmonic generation from resonant GaAs gratings.

PubMed

de Ceglia, D; D'Aguanno, G; Mattiucci, N; Vincenti, M A; Scalora, M

2011-03-01

We theoretically study second harmonic generation in nonlinear, GaAs gratings. We find large enhancement of conversion efficiency when the pump field excites the guided mode resonances of the grating. Under these circumstances the spectrum near the pump wavelength displays sharp resonances characterized by dramatic enhancements of local fields and favorable conditions for second-harmonic generation, even in regimes of strong linear absorption at the harmonic wavelength. In particular, in a GaAs grating pumped at 1064 nm, we predict second-harmonic conversion efficiencies approximately 5 orders of magnitude larger than conversion rates achievable in either bulk or etalon structures of the same material.

Scanning microwave microscopy applied to semiconducting GaAs structures

NASA Astrophysics Data System (ADS)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Cardiac gating with a pulse oximeter for dual-energy imaging.

PubMed

Shkumat, N A; Siewerdsen, J H; Dhanantwari, A C; Williams, D B; Paul, N S; Yorkston, J; Van Metter, R

2008-11-07

The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, t(imp), required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HR(thresh). For rates at or below HR(thresh), sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [t(imp)(HR) = 0]. Above HR(thresh), a characteristic t(imp)(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin

2015-09-01

A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smoothmore » GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.« less

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

1995-05-01

Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

SU-F-T-634: Feasibility Study of Respiratory Gated RapidArc SBRT Using a 6MV FFF Photon Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, K; Safaraz, M; Rodgers, J

Purpose: To conduct a feasibility study on retrospective respiratory gating and marker tracking for lung stereotactic body radiotherapy (SBRT) with a gated RapidArc delivery using a 6MV flattened filter free photon mode. Methods: A CIRS dynamic thorax phantom Model 008A with different inserts was used for treatment planning and respiratory gating. 4D CT had a free breathing simulation followed by a respiration gated, ten phased CT using a Philips Brilliance CT with a Varian RPM respiratory gating system. The internal target volume was created from the ten phase gated CT images, followed by exporting to a Varian Eclipse TPS v11more » for treatment planning on the free breath images. Both MIP and AIP were also generated for comparison of planning and target motion tracking. The planned dose was delivered with a 6MV FFF photon beam from a Varian TrueBeam accelerator. Gated target motion was also verified by tracking the implanted makers during delivery using continuous kV imaging in addition to CBCT, kV and MV localization and verification. Results: Gating was studied in three situations of lower, normal, and faster breathing at a respiratory cycle of 5, 15 and 25 breaths per minute, respectively. 4D treatment planning was performed at a normal breathing of 15 breaths per minute. The gated patterns obtained using the TrueBeam IR camera were compared with the planned ones while gating operation was added prior to delivery . Gating was realized only when the measured respiratory patterns matched to the planned ones. The gated target motion was verified within the tolerance by kV and MV imaging. Either free breathing CT or averaged CT images were studied to be good for image guidance to align the target. Conclusion: Gated RapidArc SBRT delivered with a 6MV FFF photon beam is realized using a dynamic lung phantom.« less

A novel optical gating method for laser gated imaging

NASA Astrophysics Data System (ADS)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Covalent attachment of TAT peptides and thiolated alkyl molecules on GaAs surfaces.

PubMed

Cho, Youngnam; Ivanisevic, Albena

2005-07-07

Four TAT peptide fragments were used to functionalize GaAs surfaces by adsorption from solution. In addition, two well-studied alkylthiols, mercaptohexadecanoic acid (MHA) and 1-octadecanethiol (ODT) were utilized as references to understand the structure of the TAT peptide monolayer on GaAs. The different sequences of TAT peptides were employed in recognition experiments where a synthetic RNA sequence was tested to verify the specific interaction with the TAT peptide. The modified GaAs surfaces were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS). AFM studies were used to compare the surface roughness before and after functionalization. XPS allowed us to characterize the chemical composition of the GaAs surface and conclude that the monolayers composed of different sequences of peptides have similar surface chemistries. Finally, FT-IRRAS experiments enabled us to deduce that the TAT peptide monolayers have a fairly ordered and densely packed alkyl chain structure. The recognition experiments showed preferred interaction of the RNA sequence toward peptides with high arginine content.

Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

NASA Astrophysics Data System (ADS)

Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

Accelerated GaAs growth through MOVPE for low-cost PV applications

NASA Astrophysics Data System (ADS)

Ubukata, Akinori; Sodabanlu, Hassanet; Watanabe, Kentaroh; Koseki, Shuichi; Yano, Yoshiki; Tabuchi, Toshiya; Sugaya, Takeyoshi; Matsumoto, Koh; Nakano, Yoshiaki; Sugiyama, Masakazu

2018-05-01

The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 μm/h. The conversion efficiency of the cell grown at 80 μm/h was comparable to that of the 20 μm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

NASA Astrophysics Data System (ADS)

Elsayed, M.; Krause-Rehberg, R.; Korff, B.; Ratschinski, I.; Leipner, H. S.

2013-08-01

Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450-850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 1016 - 1017 cm-3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is VGaVAs-2CuGa.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

NASA Technical Reports Server (NTRS)

Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

2003-01-01

NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

DTIC Science & Technology

1987-08-15

SUPPLEMENTARY NOTATION 17. COSATI CODES 18 SUBJECT TERMS (Corinue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Epitaxy GaAs 9...Zr leiK m I141’ FIGURES 1 . Effect of Growth Parameters on Residual Doping Type ................... 7 2. Photoluminescence Spectrum of a GaAs Epilayer... 1 3 Successful homoepitaxial growth of high purity, unintentionally doped GaAs epilayers by organometallic chemical vapor deposition (OMCVD) has

Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

PubMed Central

Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhiqian; Xu, Wenli; Chen, Hongsheng

2015-01-01

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells. PMID:26458358

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Chongbiao; Wang, Bo; Huang, Yupeng

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2013-09-01

GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, and 1.55 μm which are transmission windows of optical fibers. In this paper, we present the photoluminescence at 1.30 μm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 μm emission is from transitions between the VAs-donor and X-acceptor pairs.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Room-temperature phosphorescence logic gates developed from nucleic acid functionalized carbon dots and graphene oxide

NASA Astrophysics Data System (ADS)

Gui, Rijun; Jin, Hui; Wang, Zonghua; Zhang, Feifei; Xia, Jianfei; Yang, Min; Bi, Sai; Xia, Yanzhi

2015-04-01

Room-temperature phosphorescence (RTP) logic gates were developed using capture ssDNA (cDNA) modified carbon dots and graphene oxide (GO). The experimental results suggested the feasibility of these developed RTP-based ``OR'', ``INHIBIT'' and ``OR-INHIBIT'' logic gate operations, using Hg2+, target ssDNA (tDNA) and doxorubicin (DOX) as inputs.Room-temperature phosphorescence (RTP) logic gates were developed using capture ssDNA (cDNA) modified carbon dots and graphene oxide (GO). The experimental results suggested the feasibility of these developed RTP-based ``OR'', ``INHIBIT'' and ``OR-INHIBIT'' logic gate operations, using Hg2+, target ssDNA (tDNA) and doxorubicin (DOX) as inputs. Electronic supplementary information (ESI) available: All experimental details, Part S1-3, Fig. S1-6 and Table S1. See DOI: 10.1039/c4nr07620f

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

PubMed Central

Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

2011-01-01

In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

Negative differential velocity in ultradilute GaAs1-xNx alloys

NASA Astrophysics Data System (ADS)

Vogiatzis, N.; Rorison, J. M.

2011-04-01

We present theoretical results on steady state characteristics in bulk GaAs1-xNx alloys (x ≤ 0.2) using the single electron Monte-Carlo method. Two approaches have been used; the first assumes a GaAs band with a strong nitrogen scattering resonance and the second uses the band anti-crossing model, in which the localized N level interacts with the GaAs band strongly perturbing the conduction band. In the first model we observe two negative differential velocity peaks, the lower one associated with nitrogen scattering while the higher one with polar optical phonon emission accounting for the nonparabolicity effect. In the second model one negative differential velocity peak is observed associated with polar optical phonon emission. Good agreement with experimental low field mobility is obtained from the first model. We also comment on the results from both Models when the intervalley Г → L transfer is accounted for.

Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

NASA Astrophysics Data System (ADS)

Valencia, Hubert; Kangawa, Yoshihiro; Kakimoto, Koichi

2015-12-01

GaAs(100) c(4×4) surfaces were examined by ab initio calculations, under As2, H2 and N2 gas mixed conditions as a model for GaAs1-xNx vapor-phase epitaxy (VPE) on GaAs(100). Using a simple model consisting of As2 and H2 molecules adsorptions and As/N atom substitutions, it was shown to be possible to examine the crystal growth behavior considering the relative stability of the resulting surfaces against the chemical potential of As2, H2 and N2 gases. Such simple model allows us to draw a picture of the temperature and pressure stability domains for each surfaces that can be linked to specific growth conditions, directly. We found that, using this simple model, it is possible to explain the different N-incorporation regimes observed experimentally at different temperatures, and to predict the transition temperature between these regimes. Additionally, a rational explanation of N-incorporation ratio for each of these regimes is provided. Our model should then lead to a better comprehension and control of the experimental conditions needed to realize a high quality VPE of GaAs1-xNx.

Terahertz pulse induced intervalley scattering in photoexcited GaAs.

PubMed

Su, F H; Blanchard, F; Sharma, G; Razzari, L; Ayesheshim, A; Cocker, T L; Titova, L V; Ozaki, T; Kieffer, J-C; Morandotti, R; Reid, M; Hegmann, F A

2009-06-08

Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, Harry C.; Lagowski, Jacek

1989-01-01

The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

PubMed

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

NASA Astrophysics Data System (ADS)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

2015-09-28

We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

NASA Technical Reports Server (NTRS)

Yao, Huade; Snyder, Paul G.

1991-01-01

A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

Experimental investigation of millimeter-wave GaAs TED oscillators cooled to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Rydberg, Anders; Kollberg, Erik

1988-03-01

The output power and operating (bias) point for 80-100-GHz GaAs TED oscillators have been investigated for temperatures between 300 and 40 K. It is shown experimentally that the power can be increased by as much as nearly four times by cooling the oscillator. The thermal design of the oscillator was studied for GaAs and InP TED oscillators.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Old River Low-Sill Control Structure. Report 1: Downpull Forces on Vertical-Lift Gates: Hydraulic Model Investigation

DTIC Science & Technology

1956-12-01

34- 25 I I I POOL I I \\ 1 I v Alt VrTS I 0 f TAILWJ.J v GATE COf!TACTS NAPPE I z Q 20 >- ~ w _J 15 w / c_ r- 1-1-- [/> NlPPE OVERTOPS GATE...Q. 40 • 0 ... 0 35 Q. J 0:: 30 w ~ 0 ...J ... 25 0 z 0 20 I\\ POOL [5 "A;t VrTS jTAILWJJ t= ~ w ...J 15 r== == / GATE CONTACT...vGATE CONTACT,S NAPPE 30 w ~ 0 ..1 "- 25 0 z 0 20 ;::: ~ w ..1 15 w 10 ~ [> A’l VrTS 1\\ ~~ !iTAILWAt) 1\\ 0 z "- 1-=:1=:- 1\\ < w ..1

Formation and photoluminescence of GaAs1-xNx dilute nitride achieved by N-implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2014-07-01

In this paper, we present the fabrication of dilute nitride semiconductor GaAs1-xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1 = 0.38% and ximp2 = 0.76%. The GaAs1-xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs1-xNx samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1 = 0.38% and ximp2 = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.

Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.

PubMed

Woo, Sung Yun; Yoon, Young Jun; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

2013-12-01

Tunneling field-effect transistors (TFETs) based on the quantum mechanical band-to-band tunneling (BTBT) have advantages such as low off-current and subthreshold swing (S) below 60 mV/dec at room temperature. For these reasons, TFETs are considered as promising devices for low standby power (LSTP) applications. On the other hand, silicon (Si)-based TFETs have a drawback in low on-state current (lon) drivability. In this work, we suggest a gate-all-around (GAA) TFET based on compound semiconductors to improve device performances. The proposed device materials consist of InAs (source), InGaAs (channel), and InP (drain). According to the composition (x) of Ga in In1-xGa(x)As layer of the channel region, simulated devices have been investigated in terms of both direct-current (DC) and RF parameters including tunneling rate, transconductance (g(m)), gate capacitance (Cg), intrinsic delay time (tau), cut-off frequency (fT) and maximum oscillation frequency (f(max)). In this study, the obtained maximum values of tau, fT, and f(max) for GAA InAs/In0.9Ga0.1As/InP heterojunction TFET were 21.2 fs, 7 THz, and 18 THz, respectively.

Wafer-Fused Orientation-Patterned GaAs

DTIC Science & Technology

2008-02-13

frequencies utilizing existing industrial foundries. 15. SUBJECT TERMS Orientation-patterned Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase... Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase-matching, nonlinear frequency conversion 1. INTRODUCTION Quasi-phase-matching (QPM)1...and E. Lallier, “Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

Glucose transporters and ATP-gated K+ (KATP) metabolic sensors are present in type 1 taste receptor 3 (T1r3)-expressing taste cells.

PubMed

Yee, Karen K; Sukumaran, Sunil K; Kotha, Ramana; Gilbertson, Timothy A; Margolskee, Robert F

2011-03-29

Although the heteromeric combination of type 1 taste receptors 2 and 3 (T1r2 + T1r3) is well established as the major receptor for sugars and noncaloric sweeteners, there is also evidence of T1r-independent sweet taste in mice, particularly so for sugars. Before the molecular cloning of the T1rs, it had been proposed that sweet taste detection depended on (a) activation of sugar-gated cation channels and/or (b) sugar binding to G protein-coupled receptors to initiate second-messenger cascades. By either mechanism, sugars would elicit depolarization of sweet-responsive taste cells, which would transmit their signal to gustatory afferents. We examined the nature of T1r-independent sweet taste; our starting point was to determine if taste cells express glucose transporters (GLUTs) and metabolic sensors that serve as sugar sensors in other tissues. Using RT-PCR, quantitative PCR, in situ hybridization, and immunohistochemistry, we determined that several GLUTs (GLUT2, GLUT4, GLUT8, and GLUT9), a sodium-glucose cotransporter (SGLT1), and two components of the ATP-gated K(+) (K(ATP)) metabolic sensor [sulfonylurea receptor (SUR) 1 and potassium inwardly rectifying channel (Kir) 6.1] were expressed selectively in taste cells. Consistent with a role in sweet taste, GLUT4, SGLT1, and SUR1 were expressed preferentially in T1r3-positive taste cells. Electrophysiological recording determined that nearly 20% of the total outward current of mouse fungiform taste cells was composed of K(ATP) channels. Because the overwhelming majority of T1r3-expressing taste cells also express SUR1, and vice versa, it is likely that K(ATP) channels constitute a major portion of K(+) channels in the T1r3 subset of taste cells. Taste cell-expressed glucose sensors and K(ATP) may serve as mediators of the T1r-independent sweet taste of sugars.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Gating of the designed trimeric/tetrameric voltage-gated H+ channel

PubMed Central

Fujiwara, Yuichiro; Kurokawa, Tatsuki; Takeshita, Kohei; Nakagawa, Atsushi; Larsson, H Peter; Okamura, Yasushi

2013-01-01

The voltage-gated H+ channel functions as a dimer, a configuration that is different from standard tetrameric voltage-gated channels. Each channel protomer has its own permeation pathway. The C-terminal coiled-coil domain has been shown to be necessary for both dimerization and cooperative gating in the two channel protomers. Here we report the gating cooperativity in trimeric and tetrameric Hv channels engineered by altering the hydrophobic core sequence of the coiled-coil assembly domain. Trimeric and tetrameric channels exhibited more rapid and less sigmoidal kinetics of activation of H+ permeation than dimeric channels, suggesting that some channel protomers in trimers and tetramers failed to produce gating cooperativity observed in wild-type dimers. Multimerization of trimer and tetramer channels were confirmed by the biochemical analysis of proteins, including crystallography. These findings indicate that the voltage-gated H+ channel is optimally designed as a dimeric channel on a solid foundation of the sequence pattern of the coiled-coil core, with efficient cooperative gating that ensures sustained and steep voltage-dependent H+ conductance in blood cells. PMID:23165764

Gated photochemical hole burning in photoadducts of polyacenes

NASA Technical Reports Server (NTRS)

Iannone, Mark; Scott, Gary W.; Brinza, David; Coulter, Daniel R.

1986-01-01

A photoadduct of anthracene and tetracene (A-T) in a polymer matrix at 1.5 K generates an absorption spectrum which exhibits two-color, photon-gated photochemical hole burning (PHB) when irradiated with narrowband exciting light into the 0-0 band of the S1-S0 absorption. The efficiency of this PHB process is found to be enhanced by simultaneous irradiation near the maximum of the Tn-T1 absorption of A-T; hole widths of less than 0.07/cm have been observed for this photochemical cleavage of A-T.

Image quality of a pixellated GaAs X-ray detector

NASA Astrophysics Data System (ADS)

Sun, G. C.; Makham, S.; Bourgoin, J. C.; Mauger, A.

2007-02-01

X-ray detection requires materials with large atomic numbers Z in order to absorb the radiation efficiently. In case of X-ray imaging, fluorescence is a limiting factor for the spatial resolution and contrast at energies above the kα threshold. Since both the energy and yield of the fluorescence of a given material increase with the atomic number, there is an optimum value of Z. GaAs, which can now be epitaxially grown as self-supported thick layers to fulfil the requirements for imaging (good homogeneity of the electronic properties) corresponds to this optimum. Image performances obtained with this material are evaluated in terms of line spread function and modulation transfer function, and a comparison with CsI is made. We evaluate the image contrast obtained for a given object contrast with GaAs and CsI detectors, in the photon energy range of medical applications. Finally, we discuss the minimum object size, which can be detected by these detectors in of mammography conditions. This demonstrates that an object of a given size can be detected using a GaAs detector with a dose at least 100 times lower than using a CsI detector.

Spectrally resolved localized states in GaAs 1– xBi x

DOE PAGES

Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; ...

2017-02-01

In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs 1-xBi x. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs 1-xBi x. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localizedmore » holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs 1-xBi x alloys.« less

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

2012-06-01

Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes,more » which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.« less

Optical detectors for GaAs MMIC integration: Technology assessment

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.

1989-01-01

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Analog and RF performance of a multigate FinFET at nano scale

NASA Astrophysics Data System (ADS)

Kumar, Abhishek

2016-12-01

In this paper, analog and RF performance of the Fin field effect transistor (FET) at Nano scale is observed through 3D simulation. FinFET devices like rectangular gate all around (RE-GAA) FinFET, cylindrical gate all around (CY-GAA) FinFET and triple gate (TG) FinFET are observed. The figure of merit (FOMs) such as input-output characteristics, trans-conductance (gm), output-conductance (gd), intrinsic gain (gm/gd), gate capacitance (gate to source and total gate capacitance), unity gain cut-off frequency (ft), trans-conductance generation factor (TGF), gain frequency product (GFP), gain bandwidth product (GBP) and gain transconductance frequency product (GTFP) are observed. The analog performance of a FinFETs are observed by realising source follower circuit with NMOS transistor as a current source. The source follower circuit gain is observed. It has been observed that maximum capacitance is observed in case gate all around condition. Rectangular gate all around has the highest transconductance. In the source follower circuit, the gain curve (Vout/Vin) is sharper for TG-FinFET.

Energy dissipation dataset for reversible logic gates in quantum dot-cellular automata.

PubMed

Bahar, Ali Newaz; Rahman, Mohammad Maksudur; Nahid, Nur Mohammad; Hassan, Md Kamrul

2017-02-01

This paper presents an energy dissipation dataset of different reversible logic gates in quantum-dot cellular automata. The proposed circuits have been designed and verified using QCADesigner simulator. Besides, the energy dissipation has been calculated under three different tunneling energy level at temperature T =2 K. For estimating the energy dissipation of proposed gates; QCAPro tool has been employed.

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

Sliding-gate valve

DOEpatents

Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

1979-01-01

This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

The 20 GHz power GaAs FET development

NASA Technical Reports Server (NTRS)

Crandell, M.

1986-01-01

The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

Exact CNOT gates with a single nonlocal rotation for quantum-dot qubits

NASA Astrophysics Data System (ADS)

Pal, Arijeet; Rashba, Emmanuel I.; Halperin, Bertrand I.

2015-09-01

We investigate capacitively-coupled exchange-only two-qubit quantum gates based on quantum dots. For exchange-only coded qubits electron spin S and its projection Sz are exact quantum numbers. Capacitive coupling between qubits, as distinct from interqubit exchange, preserves these quantum numbers. We prove, both analytically and numerically, that conservation of the spins of individual qubits has a dramatic effect on the performance of two-qubit gates. By varying the level splittings of individual qubits, Ja and Jb, and the interqubit coupling time, t , we can find an infinite number of triples (Ja,Jb,t ) for which the two-qubit entanglement, in combination with appropriate single-qubit rotations, can produce an exact cnot gate. This statement is true for practically arbitrary magnitude and form of capacitive interqubit coupling. Our findings promise a large decrease in the number of nonlocal (two-qubit) operations in quantum circuits.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

SU-E-T-651: Quantification of Dosimetric Accuracy of Respiratory Gated Stereotactic Body Radiation Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thiyagarajan, Rajesh; Vikraman, S; Maragathaveni, S

2015-06-15

Purpose: To quantify the dosimetric accuracy of respiratory gated stereotactic body radiation therapy delivery using dynamic thorax phantom. Methods: Three patients with mobile target (2 lung, 1liver) were chosen. Retrospective 4DCT image sets were acquired for using Varian RPM system. An in-house MATLAB program was designed for MIP, MinIP and AvgIP generation. ITV was contoured on MIP image set for lung patients and on MinIP for liver patient. Dynamic IMRT plans were generated on selected phase bin image set in Eclipse (v10.0) planning system. CIRS dynamic thorax phantom was used to perform the dosimetric quality assurance. Patient breathing pattern filemore » from RPM system was converted to phantom compatible file by an in-house MATLAB program. This respiratory pattern fed to the CIRS dynamic thorax phantom. 4DCT image set was acquired for this phantom using patient breathing pattern. Verification plans were generated using patient gating window and delivered on the phantom. Measurements were carried out using with ion chamber and EBT2 film. Exposed films were analyzed and evaluated in FilmQA software. Results: The stability of gated output in comparison with un-gated output was within 0.5%. The Ion chamber measured and TPS calculated dose compared for all the patients. The difference observed was 0.45%, −0.52% and −0.54 for Patient 1, Patient2 and Patient 3 respectively.Gamma value evaluated from EBT film shows pass rates from 92.41% to 99.93% for 3% dose difference and 3mm distance to agreement criteria. Conclusion: Dosimetric accuracy of respiratory gated SBRT delivery for lung and liver was dosimetrically acceptable. The Ion chamber measured dose was within 0.203±0.5659% of the expected dose. Gamma pass rates were within 96.63±3.84% of the expected dose.« less

Elastomeric nanoparticle composites covalently bound to Al2O3/GaAs surfaces.

PubMed

Song, Hyon Min; Ye, Peide D; Ivanisevic, Albena

2007-08-28

This article reports the modification of Al2O3/GaAs surfaces with multifunctional soft materials. Siloxane elastomers were covalently bound to dopamine-modified Al2O3/GaAs semiconductor surfaces using MPt (M = Fe, Ni) nanoparticles. The sizes of the monodisperse FePt and NiPt nanoparticles were less than 5 nm. The surfaces of the nanoparticles as well as the Al2O3/GaAs substrates were modified with allyl-functionalized dopamine that utilized a dihydroxy group as a strong ligand. The immobilization of the elastomers was performed via a hydrosilation reaction of the allyl-functionalized dopamines with the siloxane backbones. X-ray photoelectron spectroscopy (XPS) experiments confirmed the covalent bonding of the siloxane elastomers to the oxide layer on the semiconductor surface. Fourier transform-infrared reflection absorption spectroscopy (FT-IRRAS) measurements revealed that the allyl functional groups are bonded to the siloxane backbones. The FT-IRRAS data also showed that the density of the allyl groups on the surface was lower than that of the siloxane backbones. The mechanical properties of the surface-bound nanocomposites were tested using nanoindentation experiments. The nanoindentation data showed that the soft matrix composed of the elastomeric coating on the surfaces behaves differently from the inner, hard Al2O3/GaAs substrate.

Growth of GaAs crystals from the melt in a partially confined configuration

NASA Technical Reports Server (NTRS)

Gatos, Harry C.; Lagowski, Jacek

1988-01-01

The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Morioka, N.; Mori, S.

2014-02-07

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. Themore » relationship between effective mass and bulk band structure is discussed.« less

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

NASA Technical Reports Server (NTRS)

Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

New dynamic FET logic and serial memory circuits for VLSI GaAs technology

NASA Technical Reports Server (NTRS)

Eldin, A. G.

1991-01-01

The complexity of GaAs field effect transistor (FET) very large scale integration (VLSI) circuits is limited by the maximum power dissipation while the uniformity of the device parameters determines the functional yield. In this work, digital GaAs FET circuits are presented that eliminate the DC power dissipation and reduce the area to 50% of that of the conventional static circuits. Its larger tolerance to device parameter variations results in higher functional yield.

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

ISAC's Gating-ML 2.0 data exchange standard for gating description.

PubMed

Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

2015-07-01

The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. © 2015 International Society for Advancement of Cytometry.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation.

PubMed

Vedam, S; Archambault, L; Starkschall, G; Mohan, R; Beddar, S

2007-11-01

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Realization of a quantum gate using gravitational search algorithm by perturbing three-dimensional harmonic oscillator with an electromagnetic field

NASA Astrophysics Data System (ADS)

Sharma, Navneet; Rawat, Tarun Kumar; Parthasarathy, Harish; Gautam, Kumar

2016-06-01

The aim of this paper is to design a current source obtained as a representation of p information symbols \\{I_k\\} so that the electromagnetic (EM) field generated interacts with a quantum atomic system producing after a fixed duration T a unitary gate U( T) that is as close as possible to a given unitary gate U_g. The design procedure involves calculating the EM field produced by \\{I_k\\} and hence the perturbing Hamiltonian produced by \\{I_k\\} finally resulting in the evolution operator produced by \\{I_k\\} up to cubic order based on the Dyson series expansion. The gate error energy is thus obtained as a cubic polynomial in \\{I_k\\} which is minimized using gravitational search algorithm. The signal to noise ratio (SNR) in the designed gate is higher as compared to that using quadratic Dyson series expansion. The SNR is calculated as the ratio of the Frobenius norm square of the desired gate to that of the desired gate error.

Gallium arsenide (GaAs) power conversion concept

NASA Technical Reports Server (NTRS)

Nussberger, A. A.

1980-01-01

A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

Imaging performance of a Timepix detector based on semi-insulating GaAs

NASA Astrophysics Data System (ADS)

Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

2018-01-01

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] in the Turkish population.

PubMed

Atalay, Ayfer; Koyuncu, Hasan; Köseler, Aylin; Ozkan, Anzel; Atalay, Erol O

2007-01-01

Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] is a rare variant first reported in Yugoslavia and then in Turkey, Australia and New Zealand. We report two further unrelated cases from Turkey. The importance of identifying Hb Beograd at the molecular level, especially in regions where Hb D-Los Angeles [beta121(GH4)Glu-->Gln, GAA-->CAA] is prevalent, is emphasized.

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

NASA Astrophysics Data System (ADS)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruhn, Thomas; Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str.9, 12489 Berlin; Fimland, Bjørn-Ove

We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. Onmore » the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.« less

Thermal stress cycling of GaAs solar cells

NASA Technical Reports Server (NTRS)

Janousek, B. K.; Francis, R. W.; Wendt, J. P.

1985-01-01

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

28 percent efficient GaAs concentrator solar cells

NASA Technical Reports Server (NTRS)

Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

1988-01-01

AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

NASA Technical Reports Server (NTRS)

Leon, Rosa P.; Piszczor, Michael F., Jr.

1985-01-01

The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

NASA Technical Reports Server (NTRS)

Campbell, L.; Purviance, J.

1992-01-01

A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

GaAs monolithic RF modules for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Cauley, Michael A.

1991-01-01

Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vedam, S.; Archambault, L.; Starkschall, G.

2007-11-15

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the deliverymore » gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of

Photoluminescence Study of N-Type Thermal Conversion in Semi-Insulating GaAs.

DTIC Science & Technology

1982-12-01

free electron to the crystal. For example, in GaAs, a tellurium atom on an arsenic site (TeAs) or a silicon atom on a gallium site (SiGa) are donor atoms...Photoconductivity Photoluminescenc Silicon, SiGa 5.81 6.80 Germanium, GeGa 6.08 Sulfur, SAs 6.10 Selenium, SeAs 5.89 6.10 Tellurium , TeAs When an electron...34 to the neutral donor or acceptor (Ref 16:15). The following excitonic com- plexes have been observed in GaAs: (i) exciton bound to a neutron donor at

Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

PubMed

Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

2012-06-01

The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

PubMed

Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

2017-03-01

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

NASA Astrophysics Data System (ADS)

Rozahun, Ilmira; Bahti, Tohtiaji; He, Guijie; Ghupur, Yasenjan; Ablat, Abduleziz; Mamat, Mamatrishat

2018-05-01

Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAs) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs monolayer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices.

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

1986-01-01

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Comparative research on activation technique for GaAs photocathodes

NASA Astrophysics Data System (ADS)

Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

2012-03-01

The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

Displacement damage and predicted non-ionizing energy loss in GaAs

NASA Astrophysics Data System (ADS)

Gao, Fei; Chen, Nanjun; Hernandez-Rivera, Efrain; Huang, Danhong; LeVan, Paul D.

2017-03-01

Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been applied to study the defect production for lattice atom recoil energies from 500 eV to 20 keV in gallium arsenide (GaAs). At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters. However, a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies larger than 2 keV. The results reveal a non-linear defect production that increases with the PKA energy. The damage density within a cascade core is evaluated, and used to develop a model that describes a new energy partition function. Based on the MD results, we have developed a model to determine the non-ionizing energy loss (NIEL) in GaAs, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The calculated NIEL predictions are compared with the available data, thus validating the NIEL model developed in this study.

Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth.

DTIC Science & Technology

1984-05-10

overgrowth from a spoke 90 pattern of radial stripe openings at 1 intervals on an Si0 2 coated (110) surface. Bright regions are GaAs and dark regions are Si0...the dark current for such an ideal device is given by Idark - Io[exp(eVbi/AokT) - 1] , (11-l) where Io is a proportionality constant describing the...recombination and leakage currents which contribute to an increased dark current. The value of Voc is determined by the built-in junction barrier height and the

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

First results from GaAs double-sided detectors

NASA Astrophysics Data System (ADS)

Beaumont, S. P.; Bertin, R.; Booth, C. N.; Buttar, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F. H.; D'Auria, S.; del Papa, C.; Dogru, M.; Edwards, M.; Foster, F.; Francescato, A.; Gowdy, S.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B. K.; Lynch, J. G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P. G.; Raine, C.; Santana, J.; Saunders, I. J.; Seller, P. H.; Shankar, K.; Sharp, P. H.; Skillicorn, I. O.; Sloan, T.; Smith, K. M.; ten Have, I.; Turnbull, R. M.; Vanni, U.; Zichichi, A.

1994-09-01

Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10 14 neutrons cm -2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

Expanded GAA repeats impair FXN gene expression and reposition the FXN locus to the nuclear lamina in single cells.

PubMed

Silva, Ana M; Brown, Jill M; Buckle, Veronica J; Wade-Martins, Richard; Lufino, Michele M P

2015-06-15

Abnormally expanded DNA repeats are associated with several neurodegenerative diseases. In Friedreich's ataxia (FRDA), expanded GAA repeats in intron 1 of the frataxin gene (FXN) reduce FXN mRNA levels in averaged cell samples through a poorly understood mechanism. By visualizing FXN expression and nuclear localization in single cells, we show that GAA-expanded repeats decrease the number of FXN mRNA molecules, slow transcription, and increase FXN localization at the nuclear lamina (NL). Restoring histone acetylation reverses NL positioning. Expanded GAA-FXN loci in FRDA patient cells show increased NL localization with increased silencing of alleles and reduced transcription from alleles positioned peripherally. We also demonstrate inefficiencies in transcription initiation and elongation from the expanded GAA-FXN locus at single-cell resolution. We suggest that repressive epigenetic modifications at the expanded GAA-FXN locus may lead to NL relocation, where further repression may occur. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Comparison between mouse and sea urchin orthologs of voltage-gated proton channel suggests role of S3 segment in activation gating.

PubMed

Sakata, Souhei; Miyawaki, Nana; McCormack, Thomas J; Arima, Hiroki; Kawanabe, Akira; Özkucur, Nurdan; Kurokawa, Tatsuki; Jinno, Yuka; Fujiwara, Yuichiro; Okamura, Yasushi

2016-12-01

The voltage-gated proton channel, Hv1, is expressed in blood cells, airway epithelium, sperm and microglia, playing important roles in diverse biological contexts including phagocytosis or sperm maturation through its regulation of membrane potential and pH. The gene encoding Hv1, HVCN1, is widely found across many species and is also conserved in unicellular organisms such as algae or dinoflagellates where Hv1 plays role in calcification or bioluminescence. Voltage-gated proton channels exhibit a large variation of activation rate among different species. Here we identify an Hv1 ortholog from sea urchin, Strongylocentrotus purpuratus, SpHv1. SpHv1 retains most of key properties of Hv1 but exhibits 20-60 times more rapid activation kinetics than mammalian orthologs upon heterologous expression in HEK293T cells. Comparison between SpHv1 and mHv1 highlights novel roles of the third transmembrane segment S3 in activation gating of Hv1. Copyright © 2016 Elsevier B.V. All rights reserved.

Gated strip proportional detector

DOEpatents

Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

1985-02-19

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Gated strip proportional detector

DOEpatents

Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

1987-01-01

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using noval cyclopentadienyl-based erbium sources

NASA Technical Reports Server (NTRS)

Redwing, J. M.; Kuech, T. F.; Gordon, D. C.; Vaartstra, B. A.; Lau, S. S.

1994-01-01

Erbium-doped GaAS layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 10(exp 17) - 10(exp 18)/cu cm was achieved using a relatively low source temperature of 90 C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in 'as-grown' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er(+3) luminescence at 1.54 micrometers was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration is proposed to arise from the deep centers associated with Er which are responsible for a broad emission band near 0.90 micrometers present in the photoluminescence spectra of GaAs:Si, Er films.

Optical NAND gate

DOEpatents

Skogen, Erik J [Albuquerque, NM; Raring, James [Goleta, CA; Tauke-Pedretti, Anna [Albuquerque, NM

2011-08-09

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fluegel, B.; Mascarenhas, A.; Ptak, A. J.

2007-01-01

An above-band-gap transition E{sub +} is experimentally observed in the dilute GaAs{sub 1-x}Bi{sub x} alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E{sub +} that is observed in GaAs{sub 1-x}N{sub x}, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E{sub +} level observed in GaAs is not the isolated isoelectronic impurity level N{sub x}, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbationmore » of the conduction band L{sub 6}{sup c}.« less

All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling.

PubMed

Lin, Yen-Chih; Mao, Ming-Hua; Lin, You-Ru; Lin, Hao-Hsiung; Lin, Che-An; Wang, Lon A

2014-09-01

We demonstrate ultrafast all-optical switching in GaAs microdisk resonators using a femtosecond pump-probe technique through tapered-fiber coupling. The temporal tuning of the resonant modes resulted from the refractive index change due to photoexcited carrier density variation inside the GaAs microdisk resonator. Transmission through the GaAs microdisk resonator can be modulated by more than 10 dB with a switching time window of 8 ps in the switch-off operation using pumping pulses with energies as low as 17.5 pJ. The carrier lifetime was fitted to be 42 ps, much shorter than that of the bulk GaAs, typically of the order of nanoseconds. The above observation indicates that the surface recombination plays an important role in increasing the switching speed.

Redox regulation of neuronal voltage-gated calcium channels.

PubMed

Todorovic, Slobodan M; Jevtovic-Todorovic, Vesna

2014-08-20

Voltage-gated calcium channels are ubiquitously expressed in neurons and are key regulators of cellular excitability and synaptic transmitter release. There is accumulating evidence that multiple subtypes of voltage-gated calcium channels may be regulated by oxidation and reduction. However, the redox mechanisms involved in the regulation of channel function are not well understood. Several studies have established that both T-type and high-voltage-activated subtypes of voltage-gated calcium channel can be redox-regulated. This article reviews different mechanisms that can be involved in redox regulation of calcium channel function and their implication in neuronal function, particularly in pain pathways and thalamic oscillation. A current critical issue in the field is to decipher precise mechanisms of calcium channel modulation via redox reactions. In this review we discuss covalent post-translational modification via oxidation of cysteine molecules and chelation of trace metals, and reactions involving nitric oxide-related molecules and free radicals. Improved understanding of the roles of redox-based reactions in regulation of voltage-gated calcium channels may lead to improved understanding of novel redox mechanisms in physiological and pathological processes. Identification of redox mechanisms and sites on voltage-gated calcium channel may allow development of novel and specific ion channel therapies for unmet medical needs. Thus, it may be possible to regulate the redox state of these channels in treatment of pathological process such as epilepsy and neuropathic pain.

Influence of Coulomb interaction of tunable shapes on the collective transport of ultradilute two-dimensional holes.

PubMed

Huang, Jian; Pfeiffer, L N; West, K W

2014-01-24

In high quality updoped GaAs field-effect transistors, the two-dimensional charge carrier concentrations can be tuned to very low values similar to the density of electrons on helium surfaces. An important interaction effect, screening of the Coulomb interaction by the gate, rises as a result of the large charge spacing comparable to the distance between the channel and the gate. Based on the results of the temperature (T) dependence of the resistivity from measuring four different samples, a power-law characteristic is found for charge densities ≤2×10(9)  cm(-2). Moreover, the exponent exhibits a universal dependence on a single dimensionless parameter, the ratio between the mean carrier separation and the distance to the metallic gate that screens the Coulomb interaction. Thus, the electronic properties are tuned through varying the shape of the interaction potential.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

2017-10-01

Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to < 11\\bar{1}> . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buckley, Sonia, E-mail: bucklesm@stanford.edu; Radulaski, Marina; Vučković, Jelena

2013-11-18

We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

NASA Astrophysics Data System (ADS)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1986-01-01

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

NASA Astrophysics Data System (ADS)

Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

2016-08-01

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

PubMed

Tong, C Z; Yoon, S F

2008-09-10

We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

Burst annealing of high temperature GaAs solar cells

NASA Technical Reports Server (NTRS)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Atom-Scale Mechanisms for Unstable Growth on Patterned GaAs(001)

NASA Astrophysics Data System (ADS)

Tadayyon-Eslami, Tabassom; Kan, Hung-Chih; Calhoun, Lynn; Phaneuf, Ray

2007-03-01

Molecular beam epitaxy on patterned GaAs(001) under standard conditions of temperature (˜600 C), rate (˜ 0.3 nm/s) and flux ratio (As2/Ga˜10:1) leads to a transient instability toward perturbation of the flat surface [1]. Lowering the temperature through approximately 540^oC, roughly coincident with the preroughening temperature changes the mode of this instability [2]; however, as we show in this talk, observations of the As2 flux dependence rule out both preroughening and a reconstructive phase transition as driving the growth mode change. Instead, we find evidence that the change in unstable growth mode can be explained by a competition between decreased adatom collection rate on small terraces and a small anisotropic multi-step Ehrlich-Schwoebel barrier. We relate these effects to the up-down symmetry breaking term which commonly appears in continuum equations for growth. [1] H.-C. Kan, S. Shah, T. Tadayyon-Eslami and R.J. Phaneuf, Phys. Rev. Lett., 92, 146101 (2004). [2] T. Tadayyon-Eslami, H.-C. Kan, L. C. Calhoun and R. J. Phaneuf, Phys. Rev. Lett., 97, 126101 (2006).

Detection of c. -32T>G (IVS1-13T>G) mutation of Pompe disease by real-time PCR in dried blood spot specimen.

PubMed

Bobillo Lobato, Joaquin; Sánchez Peral, Blas A; Durán Parejo, Pilar; Jiménez Jiménez, Luis M

2013-03-15

Pompe disease, or acid maltase deficiency, is a genetic muscle disorder caused by mutations in the gene encoding the acid alpha-glucosidase (GAA) enzyme, which is essential for the degradation of glycogen to glucose in lysosomes. The wide clinical variability is resulted from genetic heterogeneity, and many different mutations of the GAA gene have been reported. Some of these mutations are associated with specific phenotypes, such as the c. -32T>G (IVS1-13T>G) mutation seen in late-onset Pompe disease. We used a real-time PCR, after genomic DNA extraction isolated from DBS (dried blood spots) and PCR amplification. Our results successfully detected in controls and patients have been 100% concordant with sequencing results. This assay combines simple sample processing and rapid analysis and it allows to detect the patients with a milder form and slower progression of this disease with a high reliability. Copyright © 2013 Elsevier B.V. All rights reserved.

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

PubMed

Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

2013-05-15

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

Spectrum of the Nuclear Environment for GaAs Spin Qubits.

PubMed

Malinowski, Filip K; Martins, Frederico; Cywiński, Łukasz; Rudner, Mark S; Nissen, Peter D; Fallahi, Saeed; Gardner, Geoffrey C; Manfra, Michael J; Marcus, Charles M; Kuemmeth, Ferdinand

2017-04-28

Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over 6 orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as 1/f^{2} for frequency f≳1  Hz. Increasing the applied magnetic field from 0.1 to 0.75 T suppresses electron-mediated spin diffusion, which decreases the spectral content in the 1/f^{2} region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime (≲16π pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime (≳32 π pulses), where longitudinal Overhauser fluctuations with a 1/f spectrum dominate.

3. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

3. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE RACKS, LOOKING EAST - Nine Mile Hydroelectric Development, Powerhouse, State Highway 291 along Spokane River, Nine Mile Falls, Spokane County, WA

High purity, low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1983-01-01

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Femtosecond coherent emission from GaAs bulk microcavities

NASA Astrophysics Data System (ADS)

Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

1999-02-01

The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

Tunneling effect on double potential barriers GaAs and PbS

NASA Astrophysics Data System (ADS)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

NASA Technical Reports Server (NTRS)

Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

1988-01-01

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

2. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE LIFTING RACKS, LOOKING WEST - Nine Mile Hydroelectric Development, Powerhouse, State Highway 291 along Spokane River, Nine Mile Falls, Spokane County, WA

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

NASA Astrophysics Data System (ADS)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

2018-05-01

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. The difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

EduGATE - basic examples for educative purpose using the GATE simulation platform.

PubMed

Pietrzyk, Uwe; Zakhnini, Abdelhamid; Axer, Markus; Sauerzapf, Sophie; Benoit, Didier; Gaens, Michaela

2013-02-01

EduGATE is a collection of basic examples to introduce students to the fundamental physical aspects of medical imaging devices. It is based on the GATE platform, which has received a wide acceptance in the field of simulating medical imaging devices including SPECT, PET, CT and also applications in radiation therapy. GATE can be configured by commands, which are, for the sake of simplicity, listed in a collection of one or more macro files to set up phantoms, multiple types of sources, detection device, and acquisition parameters. The aim of the EduGATE is to use all these helpful features of GATE to provide insights into the physics of medical imaging by means of a collection of very basic and simple GATE macros in connection with analysis programs based on ROOT, a framework for data processing. A graphical user interface to define a configuration is also included. Copyright © 2012. Published by Elsevier GmbH.

Diffraction studies of the high pressure phases of GaAs and GaP

NASA Technical Reports Server (NTRS)

Baublitz, M., Jr.; Ruoff, A. L.

1982-01-01

High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive X-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172 + or - 7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal beta-Sn type phase at 215 + or - 8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.

Structural and electronic phase transitions of MoTe2 induced by Li ionic gating

NASA Astrophysics Data System (ADS)

Hwang, Jeongwoon; Zhang, Chenxi; Cho, Kyeongjae

2017-12-01

Monolayer MoTe2 has semiconducting and semimetallic phases with small energy difference, and the relative stability is readily reversed by gating. By first-principles calculations, we investigate the changes in atomic structure, electronic structure, and relative stability of two phases induced by Li ionic gating. To model Li ionic gating, we employ two approaches; one is direct adsorption of Li on MoTe2 and the other is introducing non-contacting Li plate over MoTe2. We show phonon instability in H-phase of MoTe2 with increasing the amount of charge transfer from Li, which implies a large electron-phonon coupling in the system resulting in a charge density wave state. Structural distortion is also observed in highly doped T d phase. The transition energy barrier from distorted H phase to distorted T d phase is reduced considerably compared to that of pristine MoTe2.

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.

2016-08-08

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

NASA Astrophysics Data System (ADS)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Sterol Regulation of Voltage-Gated K+ Channels.

PubMed

Balajthy, Andras; Hajdu, Peter; Panyi, Gyorgy; Varga, Zoltan

2017-01-01

Cholesterol is an essential lipid building block of the cellular plasma membrane. In addition to its structural role, it regulates the fluidity and raft structure of the membrane and influences the course of numerous membrane-linked signaling pathways and the function of transmembrane proteins, including ion channels. This is supported by a vast body of scientific data, which demonstrates the modulation of ion channels with a great variety of ion selectivity, gating, and tissue distribution by changes in membrane cholesterol. Here, we review what is currently known about the modulation of voltage-gated K + (Kv) channels by changes in membrane cholesterol content, considering raft association of the channels, the roles of cholesterol recognition sites, and those of adaptor proteins in cholesterol-Kv channel interactions. We specifically focus on Kv1.3, the dominant K + channel of human T cells. Effects of cholesterol depletion and enrichment and 7-dehydrocholesterol enrichment on Kv1.3 gating are discussed in the context of the immunological synapse and the comparison of the in vitro effects of sterol modifications on Kv1.3 function with ex vivo effects on cells from hypercholesterolemic and Smith-Lemli-Opitz patients. © 2017 Elsevier Inc. All rights reserved.

Velocity surface measurements for ZnO films over /001/-cut GaAs

NASA Technical Reports Server (NTRS)

Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

1994-01-01

A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

Neutralisation of a single voltage sensor affects gating determinants in all four pore-forming S6 segments of Ca(V)1.2: a cooperative gating model.

PubMed

Beyl, Stanislav; Depil, Katrin; Hohaus, Annette; Stary-Weinzinger, Anna; Linder, Tobias; Timin, Eugen; Hering, Steffen

2012-10-01

Voltage sensors trigger the closed-open transitions in the pore of voltage-gated ion channels. To probe the transmission of voltage sensor signalling to the channel pore of Ca(V)1.2, we investigated how elimination of positive charges in the S4 segments (charged residues were replaced by neutral glutamine) modulates gating perturbations induced by mutations in pore-lining S6 segments. Neutralisation of all positively charged residues in IIS4 produced a functional channel (IIS4(N)), while replacement of the charged residues in IS4, IIIS4 and IVS4 segments resulted in nonfunctional channels. The IIS4(N) channel displayed activation kinetics similar to wild type. Mutations in a highly conserved structure motif on S6 segments ("GAGA ring": G432W in IS6, A780T in IIS6, G1193T in IIIS6 and A1503G in IVS6) induce strong left-shifted activation curves and decelerated channel deactivation kinetics. When IIS4(N) was combined with these mutations, the activation curves were shifted back towards wild type and current kinetics were accelerated. In contrast, 12 other mutations adjacent to the GAGA ring in IS6-IVS6, which also affect activation gating, were not rescued by IIS4(N). Thus, the rescue of gating distortions in segments IS6-IVS6 by IIS4(N) is highly position-specific. Thermodynamic cycle analysis supports the hypothesis that IIS4 is energetically coupled with the distantly located GAGA residues. We speculate that conformational changes caused by neutralisation of IIS4 are not restricted to domain II (IIS6) but are transmitted to gating structures in domains I, III and IV via the GAGA ring.

Impact of Lateral Straggle on the Analog/RF Performance of Asymmetric Gate Stack Double Gate MOSFET

NASA Astrophysics Data System (ADS)

Sivaram, Gollamudi Sai; Chakraborty, Shramana; Das, Rahul; Dasgupta, Arpan; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper presents a systematic comparative study of Analog and RF performances of an underlapped double gate (U-DG) NMOSFET with Gate Stack (GS) for varying straggle lengths. Asymmetric underlap devices (A-U-DG) have been proposed as one of the remedies for reducing Short Channel Effects (SCE's) with the underlap being present towards the source for sub 20 nm devices. However, the Source to Drain (S/D) implant lateral diffusion leads to a variation in the effective underlap length. This paper investigates the impact of variation of straggle length on the Analog and RF parameters of the device. The RF performance is analyzed by considering the intrinsic capacitances (Cgd, Cgs), intrinsic resistances (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillations (fmax). The circuit performance of the devices are also studied. It is seen that the Analog and RF performances of the devices are improved by optimizing the S/D lateral straggle.

Capless Annealing of Ion Implanted GaA.

DTIC Science & Technology

1980-12-01

1967). 10. " Thermophysical Properties of Matter," edited by Y. S. Touloukian (Plenum, New York, 1977), v. 13. 11. J. F. Gibbons, W. S. Johnson and S. W...temperatures of 850 C. Using rf spark-source mass spectrometry, an As con- centration in excess of the equilibrium value of As over GaAs at the annealing...38 4.0 SUMMARY AND RECOMMENDATIONS ................... *.* ...... ..... 46 5.0 REFERENCES ..................... *.. o

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

NASA Technical Reports Server (NTRS)

Wilt, David M.; Clark, Eric B.; Ringel, Steven A.; Andre, Carrie L.; Smith, Mark A.; Scheiman, David A.; Jenkins, Phillip P.; Maurer, William F.; Fitzgerald, Eugene A.; Walters, R. J.

2004-01-01

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

PubMed

Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

2012-12-14

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.

Redox Regulation of Neuronal Voltage-Gated Calcium Channels

PubMed Central

Jevtovic-Todorovic, Vesna

2014-01-01

Abstract Significance: Voltage-gated calcium channels are ubiquitously expressed in neurons and are key regulators of cellular excitability and synaptic transmitter release. There is accumulating evidence that multiple subtypes of voltage-gated calcium channels may be regulated by oxidation and reduction. However, the redox mechanisms involved in the regulation of channel function are not well understood. Recent Advances: Several studies have established that both T-type and high-voltage-activated subtypes of voltage-gated calcium channel can be redox-regulated. This article reviews different mechanisms that can be involved in redox regulation of calcium channel function and their implication in neuronal function, particularly in pain pathways and thalamic oscillation. Critical Issues: A current critical issue in the field is to decipher precise mechanisms of calcium channel modulation via redox reactions. In this review we discuss covalent post-translational modification via oxidation of cysteine molecules and chelation of trace metals, and reactions involving nitric oxide-related molecules and free radicals. Improved understanding of the roles of redox-based reactions in regulation of voltage-gated calcium channels may lead to improved understanding of novel redox mechanisms in physiological and pathological processes. Future Directions: Identification of redox mechanisms and sites on voltage-gated calcium channel may allow development of novel and specific ion channel therapies for unmet medical needs. Thus, it may be possible to regulate the redox state of these channels in treatment of pathological process such as epilepsy and neuropathic pain. Antioxid. Redox Signal. 21, 880–891. PMID:24161125

GaAs monolithic R.F. modules for SARSAT distress beacons

NASA Technical Reports Server (NTRS)

Cauley, Michael A.

1991-01-01

Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

SU-E-T-436: Accelerated Gated IMRT: A Feasibility Study for Lung Cancer Patients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gilles, M; Boussion, N; Visvikis, D

Purpose: To evaluate the feasibility of delivering a gated Intensity Modulated Radiotherapy (IMRT) treatment using multiple respiratory phases in order to account for all anatomic changes during free breathing and accelerate the gated treatment without increasing the dose per fraction. Methods: For 7 patients with lung cancer, IMRT treatment plans were generated on a full inspiration (FI) Computed Tomography (CT) and a Mid Intensity Position (MIP) CT. Moreover, in order to achieve an accelerated gated IMRT, multiple respiratory phase plans were calculated: 2-phase plans including the FI and the full expiration phases, and 3-phase plans by adding the mid-inspiration phase.more » In order to assess the tolerance limits, plans' doses were registered and summed to the FI-based plan. Mean dose received by Organs at Risk (OARs) and target volumes were used to compare obtained plans. Results: The mean dose differences between the FI plans and the multi-phase plans never exceeded 0.4 Gy (Fig. 1). Concerning the clinical target volume these differences were even smaller: less than 0.1 Gy for both the 2-phase and 3-phase plans. Regarding the MIP treatment plan, higher doses in different healthy structures were observed, with a relative mean increase of 0.4 to 1.5 Gy. Finally, compared to the prescribed dose, the FI as well as the multi-phase plans were associated with a mean difference of 0.4 Gy, whereas in the case of MIP a higher mean difference of 0.6 Gy was observed. Conclusion: The doses obtained while planning a multi-phase gated IMRT treatment were within the tolerance limits. Compared to MIP, a better healthy tissue sparing was observed in the case of treatment planning based on one or multiple phases. Future work will consist in testing the multi-phase treatment delivery while accounting for the multileaf collimator speed constraints.« less

Identification and Characterization of Ovarian Carcinoma Peptide Epitopes Recognized by Cytotoxic T Lymphocytes

DTIC Science & Technology

2007-11-01

CCA CAG TGC CCC AGG TTA GAA CGG TCA GCA GAA TAG-2a 62 528 AGC GGC GGG CTG AAG GA GAG GGT AGG GTG GTC ATT GTG TCA TAG-2b 62 401 AGC GGC GGG CTG AAG...GGT AGG GTG GTC ATT GTG TCA TAG-2b 62 401 AGC GGC GGG CTG AAG GAC TC CAG CAC AAC AGG AAC ATT CAG TGG TAB-2c 62 536 AGC GGC GGG CTG AAG GA GGG GGA TTT...Makrigiannakis A, Gray H, Schlienger K, Liebman MN, Rubin SC, Coukos G (2003) Intratumoral T cells, recurrence, and survival in epithelial ovarian

Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

PubMed

Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

2014-02-07

Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2×6) surface

NASA Astrophysics Data System (ADS)

Shimoda, M.; Tsukamoto, S.; Koguchi, N.

1998-01-01

Core-level X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) have been applied to investigate the sulfur-terminated GaAs(001)-(2×6) surface. No forward scattering peaks were found in the XPD pattern of S 2s emission, indicating that adsorbed S atoms form a single layer on the GaAs substrate. In accordance with the zincblende structure of GaAs, the AED patterns of Ga L 3M 45M 45 and As L 3M 45M 45 emission almost coincide with each other, if one of the emissions is rotated by 90° around the [001] direction. This fact suggests that the diffraction patterns mainly reflect the structure of the bulk GaAs crystal. In order to investigate the surface structure, AED patterns in large polar angles were analyzed with single scattering cluster (SSC) calculations. The best result was obtained with a model cluster where the S-S bond length was set at 0.28 nm, 30% shorter than the corresponding length of the ideal (1×1) structure, and the adsorption height was set at 0.12-0.13 nm, 10% shorter than the ideal interlayer distance of GaAs(001) planes. These values are in good agreement with the results of STM measurements. A modulation of the inter-dimer distance was also found, suggesting the existence of missing dimers.

Optimization of conditions for thermal smoothing GaAs surfaces

NASA Astrophysics Data System (ADS)

Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S.; Alperovich, V. L.

2018-03-01

GaAs thermal smoothing by annealing in conditions which are close to equilibrium between the surface and vapors of As and Ga was earlier proved to be effective for the step-terraced surface formation on epi-ready substrates with a small root-mean-square roughness (Rq ≤ 0.15 nm). In the present study, this technique is further developed in order to reduce the annealing duration and to smooth GaAs samples with a larger initial roughness. To this end, we proposed a two-stage anneal with the first high-temperature stage aimed at smoothing "coarse" relief features and the second stage focused on "fine" smoothing at a lower temperature. The optimal temperatures and durations of two-stage annealing are found by Monte Carlo simulations and adjusted after experimentation. It is proved that the temperature and duration of the first high-temperature stage are restricted by the surface roughening, which occurs due to deviations from equilibrium conditions.

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

NASA Technical Reports Server (NTRS)

Ko, K. Y.; Lagowski, J.; Gatos, H. C.

1989-01-01

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy