Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Toward Exploring the Structure of Monolayer to Few-layer TaS2 by Efficient Ultrasound-free Exfoliation

NASA Astrophysics Data System (ADS)

Hu, Yiwei; Hao, Qiaoyan; Zhu, Baichuan; Li, Biao; Gao, Zhan; Wang, Yan; Tang, Kaibin

2018-01-01

Tantalum disulfide nanosheets have attracted great interest due to its electronic properties and device applications. Traditional solution-ased ultrasonic process is limited by ultrasound which may cause the disintegration into submicron-sized flake. Here, an efficient multi-step intercalation and ultrasound-free process has been successfully used to exfoliate 1T-TaS2. The obtained TaS2 nanosheets reveal an average thickness of 3 nm and several micrometers in size. The formation of few-layer TaS2 nanosheets as well as monolayer TaS2 sheets is further confirmed by atomic force microscopy images. The few-layer TaS2 nanosheets remain the 1T structure, whereas monolayer TaS2 sheets show lattice distortion and may adopt the 1H-like structure with trigonal prism coordination.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun

2015-10-05

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness,more » which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.« less

Transparent ALD-grown Ta2O5 protective layer for highly stable ZnO photoelectrode in solar water splitting.

PubMed

Li, Chengcheng; Wang, Tuo; Luo, Zhibin; Zhang, Dong; Gong, Jinlong

2015-04-30

This communication describes a highly stable ZnO/Ta2O5 photoanode with Ta2O5 deposited by atomic layer deposition. The ultrathin Ta2O5 protective layer prevents corrosion of ZnO and reduces surface carrier recombination, leading to a nearly two-fold increase of photo-conversion efficiency. The transparency of Ta2O5 to sunlight is identified as the main reason for the excellent stability of the photoelectrode for 5 hours.

Interface perpendicular magnetic anisotropy in ultrathin Ta/NiFe/Pt layered structures

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Kasai, Shinya; Mitani, Seiji

2018-01-01

Interface perpendicular magnetic anisotropy (PMA) in ultrathin Ta/NiFe/Pt layered structures was investigated through magnetization measurements. Ta/NiFe/Pt films with NiFe layer thickness (t) values of 2 nm or more showed typical in-plane magnetization curves, which was presumably due to the dominant contribution of the shape magnetic anisotropy. The thickness dependence of the saturation magnetization of the entire NiFe layer (M s) was well analyzed using the so-called dead-layer model, showing that the magnetically active part of the NiFe layer has saturation magnetization (M\\text{s}\\text{act}) independent of t and comparable to the bulk value. In the perpendicular direction, the saturation field H k was found to clearly decrease with decreasing t, while the effective field of shape magnetic anisotropy due to the active NiFe saturation magnetization M\\text{s}\\text{act} should be independent of t. These observations show that there exists interface PMA in the layered structures. The interface PMA energy density was determined to be ∼0.17 erg/cm2 using the dead-layer model. Motivated by the correlation observed between M s and H k, we also attempted to interpret the experimental results using an alternative approach beyond the dead-layer model; however, it gives only implications on the incomplete validity of the dead-layer model and no better understanding.

Influence of inserted Mo layer on the thermal stability of perpendicularly magnetized Ta/Mo/Co{sub 20}Fe{sub 60}B{sub 20}/MgO/Ta films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Minghua, E-mail: mhli@ustb.edu.cn; Department of Electrical Engineering, University of California, Los Angeles, California 90095; Lu, Jinhui

2016-04-15

We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta films with and without inserted Mo layers. In the absence of a Mo layer, the films show PMA at annealing temperatures below 300 °C. On the other hand, the insertion of a Mo layer preserves PMA at annealing temperatures of up to 500 °C; however, a higher annealing temperature leads to the collapse of PMA. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used to study the microstructure of the films to understand the deterioration of PMA. The XPS results show that the segregation ofmore » Ta is partly suppressed by inserting a Mo layer. Once inserted, Mo does not remain at the interface of Ta and CoFeB but migrates to the surface of the films. The HRTEM results show that the crystallization of the MgO (001) texture is improved owing to the higher annealing temperature of the Mo inserted sample. A smooth and clear CoFeB/MgO interface is evident. The inserted Mo layer not only helps to obtain sharper and smoother interfaces but also contributes to the crystallization after the higher annealing temperature of films.« less

Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

NASA Astrophysics Data System (ADS)

Baraban, A. P.; Dmitriev, V. A.; Prokof'ev, V. A.; Drozd, V. E.; Filatova, E. O.

2016-04-01

Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

PubMed Central

Hajiyev, Parviz; Cong, Chunxiao; Qiu, Caiyu; Yu, Ting

2013-01-01

In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly). PMID:24005335

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guiqin; Gao, Xiaoze; Li, Jinfu

2015-01-07

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out thatmore » the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.« less

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

PubMed

Kim, Junyeon; Sinha, Jaivardhan; Hayashi, Masamitsu; Yamanouchi, Michihiko; Fukami, Shunsuke; Suzuki, Tetsuhiro; Mitani, Seiji; Ohno, Hideo

2013-03-01

Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses. In particular, a 1 nm thickness variation of the Ta layer can change the magnitude of the effective field by nearly two orders of magnitude. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects contributing to it. Our results illustrate that the presence of atomically thin metals can profoundly change the landscape for controlling magnetic moments in magnetic heterostructures electrically.

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 2 2010-01-01 2010-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851...-Raisins with Seeds § 52.1851 Sizes of raisins with seeds—layer or cluster. The size of Layer or Cluster... measurement as applicable to layer or cluster raisins with seeds are: (a) 3 Crown size or larger. “3 Crown...

Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

PubMed

Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

2018-02-14

We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

Role of the Heat Sink Layer Ta for Ultrafast Spin Dynamic Process in Amorphous TbFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ren, Y.; Zhang, Z. Z.; Min, T.; Jin, Q. Y.

The ultrafast demagnetization processes (UDP) in Ta (t nm)/TbFeCo (20 nm) films have been studied using the time-resolved magneto-optical Kerr effect (TRMOKE). With a fixed pump fluence of 2 mJ/cm2, for the sample without a Ta underlayer (t=0nm), we observed the UDP showing a two-step decay behavior, with a relatively longer decay time (τ2) around 3.0 ps in the second step due to the equilibrium of spin-lattice relaxation following the 4f occupation. As a 10nm Ta layer is deposited, the two-step demagnetization still exists while τ2 decreases to ˜1.9ps. Nevertheless, the second-step decay (τ2=0ps) disappears as the Ta layer thickness is increased up to 20 nm, only the first-step UDP occurs within 500 fs, followed by a fast recovery process. The rapid magnetization recovery rate strongly depends on the pump fluence. We infer that the Ta layer provides conduction electrons involving the thermal equilibrium of spin-lattice interaction and serves as heat bath taking away energy from spins of TbFeCo alloy film in UDP.

Developmental patterning of the sub-epidermal integument cell layer in Arabidopsis seeds

PubMed Central

Coen, Olivier; Fiume, Elisa; Xu, Wenjia; De Vos, Delphine; Lu, Jing; Pechoux, Christine; Lepiniec, Loïc

2017-01-01

Angiosperm seed development is a paradigm of tissue cross-talk. Proper seed formation requires spatial and temporal coordination of the fertilization products – embryo and endosperm – and the surrounding seed coat maternal tissue. In early Arabidopsis seed development, all seed integuments were thought to respond homogenously to endosperm growth. Here, we show that the sub-epidermal integument cell layer has a unique developmental program. We characterized the cell patterning of the sub-epidermal integument cell layer, which initiates a previously uncharacterized extra cell layer, and identified TRANSPARENT TESTA 16 and SEEDSTICK MADS box transcription factors as master regulators of its polar development and cell architecture. Our data indicate that the differentiation of the sub-epidermal integument cell layer is insensitive to endosperm growth alone and to the repressive mechanism established by FERTILIZATION INDEPENDENT ENDOSPERM and MULTICOPY SUPPRESSOR OF IRA1 Polycomb group proteins. This work demonstrates the different responses of epidermal and sub-epidermal integument cell layers to fertilization. PMID:28348169

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Dependence of Interfacial Dzyaloshinskii-Moriya Interaction on Layer Thicknesses in Ta /Co -Fe -B /TaOx Heterostructures from Brillouin Light Scattering

NASA Astrophysics Data System (ADS)

Chaurasiya, Avinash Kumar; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

2018-01-01

The interfacial Dzyaloshinskii-Moriya interaction (IDMI) has recently drawn extensive research interest due to its fundamental role in stabilizing chiral spin textures in ultrathin ferromagnets, which are suitable candidates for future magnetic-memory devices. Here, we explore the ferromagnetic and heavy-metal layer-thickness dependence of IDMI in technologically important Ta /Co20Fe60B20/TaOx heterostructures by measuring nonreciprocity in spin-wave frequency using the Brillouin light-scattering technique. The observed value of the IDMI constant agrees with that obtained from a separate measurement of in-plane angular dependence of frequency nonreciprocity, which is also in good agreement with the theory predicted by Cortes-Ortuno and Landeros. Linear scaling behavior of IDMI with the inverse of Co-Fe-B thicknesses suggests that IDMI originates primarily from the interface in these heterostructures, whereas we observe a weak dependence of Ta thickness on the strength of IDMI. Importantly, the observed value of the IDMI constant is reasonably large by a factor of 3 compared to annealed Ta /Co -Fe -B /MgO heterostructures. We propose that the observation of large IDMI is likely due to the absence of boron diffusion towards the Ta /Co -Fe -B interface as the heterostructures are as deposited. Our detailed investigation opens up a route to designing thin-film heterostructures with the tailored IDMI constant for controlling Skyrmion-based magnetic-memory devices.

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaona, E-mail: lixiaona@dlut.edu.cn; Ding, Jianxin; Wang, Miao

To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu–Ni–M (M = Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M = Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5 μΩ cm for the (Ti{sub 1.5/13.5}Ni{sub 12/13.5}){sub 0.3}Cu{sub 99.7} film and 2.8 μΩ cm for the (Ta{sub 1.1/13.1}Ni{sub 12/13.1}){submore » 0.4}Cu{sub 99.6} film after annealing at 500 °C for 1 h. After annealing at 500 °C for 40 h, the two films remained stable without forming a Cu{sub 3}Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M–Ni is more negative than that of M–Cu.« less

Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

2018-04-01

A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

... quality of Layer or Cluster Raisins with Seeds that have similar varietal characteristics; that have a... outlined in Table III of this subpart. (b) “U.S. Grade B” is the quality of Layer or Cluster Raisins with.... (c) “Substandard” is the quality of Layer or Cluster Raisins with Seeds that fail to meet the...

Persistent Charge-Density-Wave Order in Single-Layer TaSe2.

PubMed

Ryu, Hyejin; Chen, Yi; Kim, Heejung; Tsai, Hsin-Zon; Tang, Shujie; Jiang, Juan; Liou, Franklin; Kahn, Salman; Jia, Caihong; Omrani, Arash A; Shim, Ji Hoon; Hussain, Zahid; Shen, Zhi-Xun; Kim, Kyoo; Min, Byung Il; Hwang, Choongyu; Crommie, Michael F; Mo, Sung-Kwan

2018-02-14

We present the electronic characterization of single-layer 1H-TaSe 2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.

Dependence of seed layer thickness on sensitivity of nano-ZnO cholesterol biosensor

NASA Astrophysics Data System (ADS)

Lu, Yang-Ming; Wang, Po-Chin; Tang, Jian-Fu; Chu, Sheng-Yuan

2017-01-01

The anemone-like ZnO nanostructures have been synthesized by hydrothermal method and were further adsorbed immobilized cholesterol oxidase (ChOx) as a nano-biosensor. In this study, the sensitivity of biosensor were improved by varying the thickness of the ZnO seed layer. The SEM analysis showed changes in thickness of seed layer will not affect the morphologies of anemone-like ZnO nanostructures. The X-ray Diffraction patterns showed that the (002) plane of anemone-like ZnO grown on various thickness of the seed layer was more prouded than other crystal plane. Abioelectrode (ChOx/ZnO/ITO/glass) grown on the 30nm of ZnO seed layer with high sensitivity of 57.533μAmM-1cm-2 (1.488 μA (mg/dl) -1cm-2), a wide sensitive range from 25 to 500 mg/dl. It is concluded that the thinner sputtered ZnO seed layer for growing anemone-like ZnO nanostructure can effectively improve the sensitivity of the ZnO biosensor.

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.

PubMed

Lin, Yu-De; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Yu-Sheng; Rahaman, Sk Ziaur; Tsai, Kan-Hsueh; Hsu, Chien-Hua; Chen, Wei-Su; Wang, Pei-Hua; King, Ya-Chin; Lin, Chrong Jung

2017-12-01

A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.

Synthesis, crystal structure, and photocatalytic activity of a new two-layer Ruddlesden-Popper phase, Li{sub 2}CaTa{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang Zhenhua; Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026; Tang Kaibin

2008-04-15

A new two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} has been synthesized for the first time. The detailed structure determination of Li{sub 2}CaTa{sub 2}O{sub 7} performed by powder X-ray diffraction (XRD) and electron microscopy (ED) shows that it crystallizes in the space group Fmmm [a{approx}5.5153(1), b{approx}5.4646(1), c{approx}18.2375(3)A]. UV-visible diffuse reflection spectrum of the prepared Li{sub 2}CaTa{sub 2}O{sub 7} indicates that it had absorption in the UV region. The photocatalytic activity of the Li{sub 2}CaTa{sub 2}O{sub 7} powders was evaluated by degradation of RhB molecules in water under ultra visible light irradiation. The results showed that Li{sub 2}CaTa{sub 2}O{sub 7} hasmore » high photocatalytic activity at room temperature. Therefore, the preparation and properties studies of Li{sub 2}CaTa{sub 2}O{sub 7} with a two-layer Ruddlesden-Popper structure suggest potential future applications in photocatalysis. - Graphical abstract: Crystal structure of a two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} A new two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} has been synthesized for the first time. Li{sub 2}CaTa{sub 2}O{sub 7} crystallizes in the space group Fmmm determined by powder X-ray and electron diffraction. UV-visible diffuse reflection spectra and the photocatalytic degradation of RhB molecules in water under ultra visible light irradiation show that Li{sub 2}CaTa{sub 2}O{sub 7} is a potential material in photocatalysis.« less

Film transfer enabled by nanosheet seed layers on arbitrary sacrificial substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dral, A. P.; Nijland, M.; Koster, G.

An approach for film transfer is demonstrated that makes use of seed layers of nanosheets on arbitrary sacrificial substrates. Epitaxial SrTiO{sub 3}, SrRuO{sub 3}, and BiFeO{sub 3} films were grown on Ca{sub 2}Nb{sub 3}O{sub 10} nanosheet seed layers on phlogopite mica substrates. Cleavage of the mica substrates enabled film transfer to flexible polyethylene terephthalate substrates. Electron backscatter diffraction, X-ray diffraction, and atomic force microscopy confirmed that crystal orientation and film morphology remained intact during transfer. The generic nature of this approach is illustrated by growing films on zinc oxide substrates with a nanosheet seed layer. Film transfer to a flexiblemore » substrate was accomplished via acid etching.« less

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 2 2010-01-01 2010-01-01 false Product description of Layer or (Cluster) raisins with... Raisins 1 § 52.1842 Product description of Layer or (Cluster) raisins with seeds. Raisins with Seeds that are referred to as Layer or Cluster raisins means that the raisins have not been detached from the...

Peculiarities of structure formation of layered metal-oxide system Ti-Ta-(Ti,Ta)xOy during electro-spark alloying and thermally stimulated modification

NASA Astrophysics Data System (ADS)

Fomina, Marina A.; Koshuro, Vladimir A.; Fomin, Aleksandr A.; Rodionov, Igor V.; Skaptsov, Aleksandr A.; Zakharevich, Andrey M.; Aman, Alexander; Oseev, Aleksandr; Hirsch, Soeren; Majcherek, Soeren

2016-04-01

The study focuses on high-performance combined electro-spark alloying of titanium and titanium alloy (VT1-0, VT16) surface and porous matrix structure oxidation. The metal-oxide coatings morphology is the result of melt drop transfer, heat treatment, and oxidation. The study establishes the influence of technological regimes of alloying and oxidation on morphological heterogeneity of biocompatible layered metal-oxide system Ti-Ta-(Ti,Ta)xOy. It was found that during electro-spark alloying the concentration of tantalum on the titanium surface ranges from 0.1 to 3.2 at.%. Morphology of the deposited splats is represented by uniformly grown crystals of titanium and tantalum oxides, which increase from nano- to submicron size.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

PubMed

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

PubMed Central

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-01-01

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C. PMID:28773423

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Structure and Electrical Conductivity of AgTaS 3

NASA Astrophysics Data System (ADS)

Kim, Changkeun; Yun, Hoseop; Lee, Youngju; Shin, Heekyoon; Liou, Kwangkyoung

1997-09-01

Single crystals of the compound AgTaS 3have been prepared through reactions of the elements with halide mixtures. The structure of AgTaS 3has been analyzed by single-crystal X-ray diffraction methods. AgTaS 3crystallizes in the space group D172h- Cmcmof the orthorhombic system with four formula units in a cell of dimensions a=3.378(2), b=14.070(5), c=7.756(3) Å. The structure of AgTaS 3consists of two-dimensional 2∞[TaS -3] layers separated by Ag +cations. The layer is composed of Ta-centered bicapped trigonal prisms stacked on top of each other by sharing triangular faces. These chains are linked to form the infinite two-dimensional 2∞[TaS -3] slabs. These layers are held together through van der Waals interactions, and Ag +ions reside in the distorted octahedral sites between the layers. The temperature dependence of the electrical conductivity along the needle axis of AgTaS 3shows the typical behavior of an extrinsic semiconductor.

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sønsteby, Henrik Hovde, E-mail: henrik.sonsteby@kjemi.iuio.no; Nilsen, Ola; Fjellvåg, Helmer

2016-07-15

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer depositionmore » with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.« less

Tuning the effective parameters in (Ta/Cu/[Ni/Co]x/Ta) multilayers with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Ayareh, Zohreh; Moradi, Mehrdad; Mahmoodi, Saman

2018-06-01

In this paper, we report perpendicular magnetic anisotropy (PMA) in a (Ta/Cu/[Ni/Co]x/Ta) multilayers structure. These typical structures usually include a multilayer of ferromagnetic and transition metal thin films. Usually, magnetic anisotropy is characterized by magnetization loops determined by magnetometer or magneto-optical Kerr effect (MOKE). The interface between ferromagnetic and metallic layers plays an important role in magnetic anisotropy evolution from out-of-plane to in-plane in (Ta/Cu/[Ni/Co]/Ta) structure. Obtained results from MOKE and magnetometry of these samples show that they have different easy axes due to change in thickness of Cu as spacer layer and difference in number of repetition of [Ni/Co] stacks.

The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-02-15

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces themore » Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

Effects of Cr-N-ZrO 2 seed layer formed on glass substrates for longitudinal recording media

NASA Astrophysics Data System (ADS)

Suzuki, Hiroyuki; Djayaprawira, David D.; Takahashi, Yoshio; Ishikawa, Akira; Ono, Toshinori; Yahisa, Yotsuo

1999-03-01

Effects of Cr-N-ZrO 2 seed layer deposited on glass substrates before the deposition of C/Co-Cr-Pt/Cr-Ti layers for longitudinal recording media have been investigated. The product of v and Is, the activation volume and the saturation magnetization per unit volume, media noise Nd and S0/ Nd, which is the half value of peak-to-peak output voltage of an isolated pulse over Nd at 11.8 kFC/mm, are evaluated. We find that vIs is decreased by adding N and ZrO 2 to Cr seed layer. Nd is reduced as vIs decreases by adding nitrogen to the Cr seed layer. This is mainly due to the decreased grain sizes of both Cr-Ti underlayer and Co-Cr-Pt magnetic layer. The Nd is further reduced by the addition of ZrO 2 to the Cr-N seed layer. Highest S0/ Nd is achieved for the media with Cr-N-ZrO 2 seed layer. On the other hand, the media with Cr-ZrO 2 seed layer deposited without nitrogen show the higher Nd. Therefore the decrease of the grain size by addition of nitrogen into Ar is essential to reduce Nd, and the ZrO 2 addition to the Cr-N seed layer seems to enhance the effect of grain size reduction by nitrogen addition.

The effect of different oxygen exchange layers on TaO x based RRAM devices

NASA Astrophysics Data System (ADS)

Alamgir, Zahiruddin; Holt, Joshua; Beckmann, Karsten; Cady, Nathaniel C.

2018-01-01

In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaO x based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

Titanium nitride as a seed layer for Heusler compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niesen, Alessia, E-mail: aniesen@physik.uni-bielefeld.de; Glas, Manuel; Ludwig, Jana

Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were depositedmore » on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.« less

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

NASA Astrophysics Data System (ADS)

Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

2017-05-01

The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

Dynamic diffraction effects and coherent breathing oscillations in ultrafast electron diffraction in layered 1T-TaSeTe

PubMed Central

Wei, Linlin; Sun, Shuaishuai; Guo, Cong; Li, Zhongwen; Sun, Kai; Liu, Yu; Lu, Wenjian; Sun, Yuping; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2017-01-01

Anisotropic lattice movements due to the difference between intralayer and interlayer bonding are observed in the layered transition-metal dichalcogenide 1T-TaSeTe following femtosecond laser pulse excitation. Our ultrafast electron diffraction investigations using 4D-transmission electron microscopy (4D-TEM) clearly reveal that the intensity of Bragg reflection spots often changes remarkably due to the dynamic diffraction effects and anisotropic lattice movement. Importantly, the temporal diffracted intensity from a specific crystallographic plane depends on the deviation parameter s, which is commonly used in the theoretical study of diffraction intensity. Herein, we report on lattice thermalization and structural oscillations in layered 1T-TaSeTe, analyzed by dynamic diffraction theory. Ultrafast alterations of satellite spots arising from the charge density wave in the present system are also briefly discussed. PMID:28470025

Seed morphology, germination phenology, and capacity to form a seed bank in six herbaceous layer apiaceae species of the eastern deciduous forest

Treesearch

Tracy S. Hawkins; Jerry M. Baskin; Carol C. Baskin

2007-01-01

We compared seed mass, seed morphology, and long-term germination phenology of three monocarpic (MI and three polycarpic (P) Apiaceae species of the herbaceous layer of the Eastern Deciduous Forest. Seeds (mericarps) of the six species differed considerably in mass, shape, and ornamentation. Mean seed masses were ranked Cryptotaenia canadensis (M)...

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Effect of an Electrochemically Oxidized ZnO Seed Layer on ZnO Nanorods Grown by using Electrodeposition

NASA Astrophysics Data System (ADS)

Jeon, Woosung; Leem, Jae-Young

2018-05-01

ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO nanorods grown on the ZnO seed layer had top surfaces that were flat whereas those grown without it had rough top surfaces, as observed in field-emission scanning electron microscopy images. In the Xray diffraction analysis, all ZnO nanorods showed preferential orientation with the (002) plane. In the case of ZnO nanorods prepared with a ZnO seed layer, the residual stress decreased, and the full width at half maximum of the ZnO (002) plane peak decreased. The photoluminescence spectra show a strong and narrow near-band-edge emission peak and high near-band-edge emission to deep-level emission peak ratio for the ZnO nanorods prepared with the seed layer. With respect to the photoresponse properties, the ZnO nanorods grown with the ZnO seed layer showed higher responsivity and faster rise/decay curves than those grown without it. Thus, the ZnO seed layer formed by electro-oxidation improves the structural, optical, and photoresponse properties of the ZnO nanorods formed on it. This method could serve as a new route for improving the properties of optoelectronic devices.

Zinc Tantalum Oxynitride (ZnTaO2N) Photoanode Modified with Cobalt Phosphate Layers for the Photoelectrochemical Oxidation of Alkali Water

PubMed Central

T. Weller, Mark

2018-01-01

Photoanodes fabricated by the electrophoretic deposition of a thermally prepared zinc tantalum oxynitride (ZnTaO2N) catalyst onto indium tin oxide (ITO) substrates show photoactivation for the oxygen evolution reaction (OER) in alkaline solutions. The photoactivity of the OER is further boosted by the photodeposition of cobalt phosphate (CoPi) layers onto the surface of the ZnTaO2N photoanodes. Structural, morphological, and photoelectrochemical (PEC) properties of the modified ZnTaO2N photoanodes are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible (UV−Vis) diffuse reflectance spectroscopy, and electrochemical techniques. The presence of the CoPi layer significantly improved the PEC performance of water oxidation in an alkaline sulphate solution. The photocurrent-voltage behavior of the CoPi-modified ZnTaO2N anodes was improved, with the influence being more prominent at lower oxidation potentials. A stable photocurrent density of about 2.3 mA·cm−2 at 1.23 V vs. RHE was attained upon visible light illumination. Relative to the ZnTaO2N photoanodes, an almost three-fold photocurrent increase was achieved at the CoPi/ZnTaO2N photoelectrode. Perovskite-based oxynitrides are modified using an oxygen-evolution co-catalyst of CoPi, and provide a new dimension for enhancing the photoactivity of oxygen evolution in solar-assisted water-splitting reactions. PMID:29346306

Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

NASA Astrophysics Data System (ADS)

Ruffell, S.; Kurunczi, P.; England, J.; Erokhin, Y.; Hautala, J.; Elliman, R. G.

2013-07-01

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current-voltage and capacitance-voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

Low-Temperature Synthesis of Vertically Align ZnO Layer on ITO Glass: The Role of Seed Layer and Hydrothermal Process

NASA Astrophysics Data System (ADS)

Sholehah, Amalia; Achmad, NurSumiati; Dimyati, Arbi; Dwiyanti, Yanyan; Partuti, Tri

2017-05-01

ZnO thin layer has a broad potential application in optoelectronic devices. In the present study, vertically align ZnO layers on ITO glass were synthesized using wet chemical method. The seed layers were prepared using electrodeposition method at 3°C. After that, the growing process was carried out using chemical bath deposition (CBD) at 90°C. To improve the structural property of the ZnO layers, hydrothermal technique was used subsequently. Results showed that seeding layer has a great influence on the physical properties of the ZnO layers. Moreover, hydrothermal process conducted after the ZnO growth can enhance the morphological property of the layers. From the experiments, it is found that the ZnO layers has diameter of ∼60 nm with increasing thickness from ∼0.8 to 1.2 μm and band-gap energies of ∼3.2 eV.

Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

NASA Astrophysics Data System (ADS)

Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

2016-09-01

The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

PubMed Central

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G.; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta2O5) sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes. PMID:22163862

Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

PubMed

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

Heusler alloys with bcc tungsten seed layers for GMR junctions

NASA Astrophysics Data System (ADS)

Frost, William; Hirohata, Atsufumi

2018-05-01

We demonstrate that polycrystalline Co2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

Investigation of Gas Seeding for Planar Laser-Induced Fluorescence in Hypersonic Boundary Layers

NASA Technical Reports Server (NTRS)

Arisman, C. J.; Johansen, C. T.; Bathel, B. F.; Danehy, P. M.

2015-01-01

Numerical simulations of the gas-seeding strategies required for planar laser-induced fluorescence in a Mach 10 (approximately Mach 8.2 postshock) airflow were performed. The work was performed to understand and quantify the adverse effects associated with gas seeding and to assess various types of seed gas that could potentially be used in future experiments. In prior experiments, NO and NO2 were injected through a slot near the leading edge of a flatplate wedge model used in NASA Langley Research Center's 31 in. Mach 10 air tunnel facility. In this paper, nitric oxide, krypton, and iodine gases were simulated at various injection rates. Simulations showing the deflection of the velocity boundary layer for each of the cases are presented. Streamwise distributions of velocity and concentration boundary-layer thicknesses, as well as vertical distributions of velocity, temperature, and mass distributions, are presented for each of the cases. A comparison between simulated streamwise velocity profiles and experimentally obtained molecular tagging velocimetry profiles using a nitric oxide seeding strategy is performed to verify the influence of such a strategy on the boundary layer. The relative merits of the different seeding strategies are discussed. The results from a custom solver based on OpenFOAM version 2.2.1 are compared against results obtained from ANSYS® Fluent version 6.3.

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta 1-x Al x N y Films for Cu Diffusion Barrier Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consiglio, S.; Dey, S.; Yu, K.

2016-01-01

Ultrathin TaN and Ta 1-xAl xN y films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3Si formation and determine the effective activation energy (E a) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (Tmore » c) for Cu silicidation. The Ea values of Cu 3Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the Ea of Cu 3Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase.« less

Effect of Ti seed layers on structure of self-organized epitaxial face-centered-cubic-Ag(001) oriented nanodots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamiko, M.; Nose, K.; Suenaga, R.

2013-12-28

The influence of Ti seed layers on the structure of self-organized Ag nanodots, obtained with a Ti seed-layer-assisted thermal agglomeration method, has been investigated. The samples were grown on MgO(001) single crystal substrates by RF magnetron sputter deposition. The samples were deposited at room temperature and post-annealed at 350 °C for 4 h while maintaining the chamber vacuum conditions. The results of atomic force microscopy (AFM) observations indicated that the insertion of the Ti seed layer (0.6–5.0 nm) between the MgO substrate and Ag layer promotes the agglomeration process, forming the nanodot array. Comparisons between the AFM images revealed thatmore » the size of the Ag nanodots was increased with an increase in the Ti seed layer thickness. The atomic concentration of the film surface was confirmed by X-ray photoelectron spectroscopy (XPS). The XPS result suggested that the nanodot surface mainly consisted of Ag. Moreover, X-ray diffraction results proved that the initial deposition of the Ti seed layer (0.6–5.0 nm) onto MgO(001) prior to the Ag deposition yielded high-quality fcc-Ag(001) oriented epitaxial nanodots. The optical absorbance spectra of the fabricated Ag nanodots with various Ti seed layer thicknesses were obtained in the visible light range.« less

Redetermination of Na(3)TaF(8).

PubMed

Langer, Vratislav; Smrcok, Lubomír; Boca, Miroslav

2010-09-01

The crystal structure of trisodium octafluoridotantalate, Na(3)TaF(8), has been redetermined using diffractometer data collected at 153 K, resulting in more accurate bond distances and angles than obtained from a previous structure determination based on film data. The structure is built from layers running along [101], which are formed by distorted [TaF(8)] antiprisms and [NaF(6)] rectangular bipyramids sharing edges and corners. The individual layers are separated by eight-coordinated Na ions. Two atoms in the asymmetric unit are in special positions: the Ta atom is on a twofold axis in Wyckoff position 4e and one of the Na ions lies on an inversion centre in Wyckoff site 4d.

Influence of substrates and rutile seed layers on the assembly of hydrothermally grown rutile TiO2 nanorod arrays

NASA Astrophysics Data System (ADS)

Kalb, Julian; Dorman, James A.; Folger, Alena; Gerigk, Melanie; Knittel, Vanessa; Plüisch, Claudia S.; Trepka, Bastian; Lehr, Daniela; Chua, Emily; Goodge, Berit H.; Wittemann, Alexander; Scheu, Christina; Polarz, Sebastian; Schmidt-Mende, Lukas

2018-07-01

Rutile TiO2 nanorod arrays (NRAs) are applicable in various prospective technologies. Hydrothermal methods present a simple technique to fabricate such NRAs. In this report, we present the fabrication of seed layers for the hydrothermal growth of rutile TiO2 nanorods via sputter deposition, electron-beam evaporation, and sol-gel method and study the influence of each on the growth behavior. To satisfy the requirements of numerous applications, p-type silicon, platinum, levitating carbon membranes, a template made of polystyrene spheres, and commercial fluorine tin oxide (FTO) were employed as substrates. We document the structural properties of the TiO2 seed layers and describe the relationship between the characteristics of the seed crystals, the growth evolution, and the appearance of as-grown nanorods. Various growth stages of rutile TiO2 nanorods are compared depending on whether they are grown on polycrystalline TiO2 or FTO seed layers. In both cases, a homogenous TiO2 bottom layer is formed at the seed layer/substrate interface, which is essential for electronic applications such as hybrid solar cells. Detached NRAs illustrate the effect of rutile FTO and TiO2 on the porosity of this bottom layer. Further details about the formation process of this layer are obtained from the growth on confined seed layers fabricated by electron-beam lithography.

Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

NASA Astrophysics Data System (ADS)

Seo, Youngmi; Kim, Jung Hyeun

2011-06-01

Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

AIRBORNE BACTERIA IN THE ATMOSPHERIC SURFACE LAYER: TEMPORAL DISTRIBUTION ABOVE A GRASS SEED FIELD

EPA Science Inventory

Temporal airborne bacterial concentrations and meteorological conditions were measured above a grass seed field in the Willamette River Valley, near Corvallis, Oregon, in the summer of 1993. he report describes the changes in the atmospheric surface layer over a grass seed field ...

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Numerical Investigation of PLIF Gas Seeding for Hypersonic Boundary Layer Flows

NASA Technical Reports Server (NTRS)

Johanson, Craig T.; Danehy, Paul M.

2012-01-01

Numerical simulations of gas-seeding strategies required for planar laser-induced fluorescence (PLIF) in a Mach 10 air flow were performed. The work was performed to understand and quantify adverse effects associated with gas seeding and to compare different flow rates and different types of seed gas. The gas was injected through a slot near the leading edge of a flat plate wedge model used in NASA Langley Research Center's 31- Inch Mach 10 Air Tunnel facility. Nitric oxide, krypton, and iodine gases were simulated at various injection rates. Simulation results showing the deflection of the velocity field for each of the cases are presented. Streamwise distributions of velocity and concentration boundary layer thicknesses as well as vertical distributions of velocity, temperature, and mass distributions are presented for each of the cases. Relative merits of the different seeding strategies are discussed.

Two transcription factors TaPpm1 and TaPpb1 co-regulate anthocyanin biosynthesis in purple pericarps of wheat

PubMed Central

Jiang, Wenhui; Liu, Tianxiang; Nan, Wenzhi; Jeewani, Diddugodage Chamila; Niu, Yanlu; Li, Chunlian; Shi, Xue; Wang, Cong; Wang, Jiahuan; Li, Yang; Wang, Zhonghua

2018-01-01

Abstract Purple pericarps of bread wheat (Triticum aestivum L.) are a useful source of dietary anthocyanins. Previous mapping results indicated that the purple pericarp trait is controlled by two complementary genes located on chromosomes 7D and 2A. However, the identity of the genes and the mechanisms by which they regulate the trait are unknown. In this study, two transcription factors were characterised as anthocyanin activators in purple pericarps: TaPpm1 (purple pericarp-MYB 1) and TaPpb1 (purple pericarp-bHLH 1). Three non-functional variants were detected in the coding sequence of TaPpm1 from non-purple seed lines, in which the function of TaPpm1 was destroyed either by insertion-induced frame shifts or truncated peptides. There were six 261-bp tandem repeats in the promoter region of TaPpb1 in the purple-grained varieties, while there was only one repeat unit present in the non-purple varieties. Furthermore, using yeast two-hybrid, dual luciferase, yeast one-hybrid, and transient assays, we were able to demonstrate that the interaction of TaPpm1 and TaPpb1 co-regulates the synthesis of anthocyanin. Overall, our results provide a better understanding of the molecular basis of anthocyanin synthesis in the wheat pericarp and indicate the existence of an integrated regulatory mechanism that controls production. PMID:29562292

A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

NASA Astrophysics Data System (ADS)

Gassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S.

2014-04-01

We studied Ta, TaN, and sub-stoichiometric TaNx electrodes (obtained by nitrogen redistribution in Ta/TaN or Ti/TaN bilayers) deposited on thermal SiO2 and HfO2/IL (0.8 nm SiO2 IL, i.e., interlayer) stacks. Effective work-functions (WF) were extracted on MOS capacitor structures on SiO2 bevelled insulator of 4.2 eV for pure Ta, 4.6 eV for TaN, and 4.3 eV for sub-stoichiometric TaNx. This intermediate WF value is explained by TaN nitrogen redistribution with reactive Ta or Ti elements shifting the gate work-function toward the Si conduction band. The same electrodes deposited on an HfO2/IL dielectric showed different behavior: First, the Ta/HfO2/IL stack shows a +200 meV WF increase (towards the Si valence band) compared to the SiO2 dielectric stack. This increase is explained by the well-known HfO2/IL dipole formation. Second, in contrast to electrodes deposited on SiO2, sub-stoichiometric TaNx/HfO2 is found to have a lower WF (4.3 eV), than pure Ta on HfO2 (4.4 eV). This inversion in work-function behavior measured on SiO2 vs. HfO2 is explained by the nitrogen redistribution in Ta/TaN bilayer together with diffusion of nitrogen through the HfO2 layer, leading to Si-N formation which prevents dipole formation at the HfO2/IL interface.

Structural, electronic and vibrational properties of few-layer 2H-and 1T-TaSe 2

DOE PAGES

Yan, Jia -An; Dela Cruz, Mack A.; Cook, Brandon G.; ...

2015-11-16

Two-dimensional metallic transition metal dichalcogenides (TMDs) are of interest for studying phenomena such as charge-density wave (CDW) and superconductivity. Few-layer tantalum diselenides (TaSe 2) are typical metallic TMDs exhibiting rich CDW phase transitions. However, a description of the structural, electronic and vibrational properties for different crystal phases and stacking configurations, essential for interpretation of experiments, is lacking. We present first principles calculations of structural phase energetics, band dispersion near the Fermi level, phonon properties and vibrational modes at the Brillouin zone center for different layer numbers, crystal phases and stacking geometries. Evolution of the Fermi surfaces as well as themore » phonon dispersions as a function of layer number reveals dramatic dimensionality effects in this CDW material. Lastly, our results indicate strong electronic interlayer coupling, detail energetically possible stacking geometries, and provide a basis for interpretation of Raman spectra.« less

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

Nanostructured Ti-Ta thin films synthesized by combinatorial glancing angle sputter deposition

NASA Astrophysics Data System (ADS)

Motemani, Yahya; Khare, Chinmay; Savan, Alan; Hans, Michael; Paulsen, Alexander; Frenzel, Jan; Somsen, Christoph; Mücklich, Frank; Eggeler, Gunther; Ludwig, Alfred

2016-12-01

Ti-Ta alloys are attractive materials for applications in actuators as well as biomedical implants. When fabricated as thin films, these alloys can potentially be employed as microactuators, components for micro-implantable devices and coatings on surgical implants. In this study, Ti100-x Ta x (x = 21, 30) nanocolumnar thin films are fabricated by glancing angle deposition (GLAD) at room temperature using Ti73Ta27 and Ta sputter targets. Crystal structure, morphology and microstructure of the nanostructured thin films are systematically investigated by XRD, SEM and TEM, respectively. Nanocolumns of ˜150-160 nm in width are oriented perpendicular to the substrate for both Ti79Ta21 and Ti70Ta30 compositions. The disordered α″ martensite phase with orthorhombic structure is formed in room temperature as-deposited thin films. The columns are found to be elongated small single crystals which are aligned perpendicular to the (20\\bar{4}) and (204) planes of α″ martensite, indicating that the films’ growth orientation is mainly dominated by these crystallographic planes. Laser pre-patterned substrates are utilized to obtain periodic nanocolumnar arrays. The differences in seed pattern, and inter-seed distances lead to growth of multi-level porous nanostructures. Using a unique sputter deposition geometry consisting of Ti73Ta27 and Ta sputter sources, a nanocolumnar Ti-Ta materials library was fabricated on a static substrate by a co-deposition process (combinatorial-GLAD approach). In this library, a composition spread developed between Ti72.8Ta27.2 and Ti64.4Ta35.6, as confirmed by high-throughput EDX analysis. The morphology over the materials library varies from well-isolated nanocolumns to fan-like nanocolumnar structures. The influence of two sputter sources is investigated by studying the resulting column angle on the materials library. The presented nanostructuring methods including the use of the GLAD technique along with pre-patterning and a

Effect of the seed layer on the Y0.5Gd0.5Ba2Cu3O7-σ film fabricated by PLD

NASA Astrophysics Data System (ADS)

Yao, Yanjie; Wang, Wei; Liu, Linfei; Lu, Saidan; Wu, Xiang; Zheng, Tong; Liu, Shunfan; Li, Yijie

2018-06-01

The surface morphology and internal residual stress have influence on the critical current density (Jc) of REBa2Cu3O7-σ (REBCO) coated conductor. In order to modulate them, a series of Y0.5Gd0.5Ba2Cu3O7-σ (YGBCO) films were prepared by pulsed laser deposition (PLD) through introducing a seed layer in this paper. The thicknesses of seed layer changes from about 2 nm to 30 nm. For comparison, a standard sample without seed layer was fabricated at the same deposition condition. The surface morphology was illustrated by Scanning electron microscopy (SEM). The surface roughness was scanned by Atomic force microscopy (AFM). The microstructure and internal strain were measured by X-ray Diffraction (XRD). DC four-probe method was used to measure the critical current of the samples at 77 K and self-field. As a result, all samples have high Jc of about 4 MA/cm2, while the self-field Jc of the YGBCO films can be promoted by the seed layer. The results of our research work are as follows. First of all, seed layer makes the deposition of the YGBCO layer much easier to control. By this way, we can decrease the surface roughness of the samples. Furthermore, the internal residual stress of the YGBCO films with seed layer decrease. Finally, the best thickness of the seed layer was found by summarizing and analyzing the conditions of seed layer.

Removal of tetracycline from contaminated water by Moringa oleifera seed preparations.

PubMed

Santos, Andréa F S; Matos, Maria; Sousa, Ângela; Costa, Cátia; Nogueira, Regina; Teixeira, José A; Paiva, Patrícia M G; Parpot, Pier; Coelho, Luana C B B; Brito, António G

2016-01-01

The aim of this study was to evaluate tetracycline antibiotic (TA) removal from contaminated water by Moringa oleifera seed preparations. The composition of synthetic water approximate river natural contaminated water and TA simulated its presence as an emerging pollutant. Interactions between TA and protein preparations (extract; fraction and lectin) were also evaluated. TA was determined by solid-phase extraction followed by high-performance liquid chromatography-mass spectrometry. Moringa extract and flour removed TA from water. The extract removed TA in all concentrations, and better removal (40%) was obtained with 40 mg L(-1); seed flour (particles < 5 mm), 1.25 and 2.50 g L(-1) removed 28% and 29% of tetracycline, respectively; particles > 5 mm (0.50 g L(-1)) removed 55% of antibiotic. Interactions between TA and seed preparations were assayed by haemagglutinating activity (HA). Specific HA (SHA) of extract (pH 7) was abolished with tetracycline (5 mg L(-1)); fraction (75%) and lectin HA (97%) were inhibited with TA. Extract SHA decreased by 75% at pH 8. Zeta potential (ZP) of extract 700 mg L(-1) and tetracycline 50 mg L(-1) , pH range 5-8, showed different results. Extract ZP was more negative (-10.73 to -16.00 mV) than tetracycline ZP (-0.27 to -20.15 mV); ZP difference was greater in pH 8. The focus of this study was achieved since Moringa preparations removed TA from water and compounds interacting with tetracycline involved at least lectin-binding sites. This is a natural process, which do not promote environmental damage.

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

NASA Astrophysics Data System (ADS)

Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

2016-11-01

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

Structural and optical properties of ZnO nanorods on Mg0.2Zn0.8O seed layers grown by hydrothermal method.

PubMed

Kim, Min Su; Kim, Do Yeob; Kim, Sung-O; Leem, Jae-Young

2013-05-01

ZnO nanorods were grown on the Mg0.2Zn0.8O seed layers with different thickness by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of the Mg0.2Zn0.8O seed layer thickness on the structural and the optical properties of the ZnO nanorods. The residual stress in the Mg0.2Zn0.8O seed layers was depended on the thickness while the texture coefficient of the Mg0.2Zn0.8O seed layers was not affected significantly. The smaller full width at half maximum (FWHM) of the ZnO (002) diffraction and near-band-edge emission (NBE) peak and the larger average grain size were observed from the ZnO nanorods grown on the Mg0.2Zn0.8O seed layers with 5 layers (thickness of 350 nm), which indicate the enhancement the structural and the optical properties of the ZnO nanorods.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms.

PubMed

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-05

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

NASA Astrophysics Data System (ADS)

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-01

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

PubMed Central

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-01

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials. PMID:28053307

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

NASA Astrophysics Data System (ADS)

Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Roy, Anisha; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Jana, Debanjan; Qiu, Jian-Tai; Yang, Jer-Ren

2018-03-01

Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta2+/Ta5+ for TaOx switching material and W0/W6+ for WOx layer at the W/TaOx interface through X-ray photoelectron spectroscopy and H2O2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaOx layer for the W/Al2O3/TaOx/TiN structures. This leads to higher Schottky barrier height at the W/Al2O3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >108 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 104 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaOx and WOx membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H2O2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al2O3 membrane does not show sensing. The TaOx material in W/Al2O3/TaOx/TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H2O2 sensors.

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur

2018-05-01

Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.

A broadband permeability measurement of FeTaN lamination stack by the shorted microstrip line method

NASA Astrophysics Data System (ADS)

Chen, Xin; Ma, Yungui; Xu, Feng; Wang, Peng; Ong, C. K.

2009-01-01

In this paper, the microwave characteristics of a FeTaN lamination stack are studied with a shorted microstrip line method. The FeTaN lamination stack was fabricated by gluing 54 layers of FeTaN units with epoxy together. The FeTaN units were deposited on both sides of an 8 μm polyethylene terephthate (Mylar) film as the substrate by rf magnetron sputtering. On each side of the Mylar substrate, three 100-nm FeTaN layers are laminated with two 8 nm Al2O3 layers. The complex permeability of FeTaN lamination stack is calculated by the scattering parameters using the shorted load transmission line model based on the quasi-transverse-electromagnetic approximation. A full wave analysis combined with an optimization process is employed to determine the accurate effective permeability values. The optimized complex permeability data can be used for the microwave filter design.

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO{sub 2} seed layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asib, N. A. M., E-mail: amierahasib@yahoo.com; Afaah, A. N.; Aadila, A.

Titanium dioxide (TiO{sub 2}) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO{sub 2} seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO{sub 2} seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO{sub 2} seed layer of 0.100 M. PL spectramore » of the TiO{sub 2}: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO{sub 2} seed layer.« less

Diffusion studies and critical current in superconducting Nb-Ti-Ta artificial pinning center wire

NASA Astrophysics Data System (ADS)

Bormio-Nunes, C.; Gomes, P. M. N.; Tirelli, M. A.; Ghivelder, L.

2005-08-01

The diffusion between Nb-20%Ta (wt %) and pure Ti is studied at temperatures of 973, 1023, and 1073K, for duration times among 25 and 121h in an artificial pinning center (APC) wire composed of a Ti core surrounded by a Nb-20%Ta layer. The produced diffusion layer is a ternary alloy with superconducting properties, such as critical field Bc2 and critical current density JC, which intrinsically depend on the layer composition. Measurements of layer morphology and composition were performed, and the results show a preferential diffusion of Nb and Ta into Ti. There is a slight diffusion of Ti into Nb through grain boundaries. The presence of Ta also slows down the diffusion of Nb in Ti if compared to the couple formed by pure Nb and Ti. Regarding the mechanical properties of the composite wire, the use of lower temperatures to form the ternary phase is desirable in order to avoid a larger portion of the diffusion layer rich in Ti that favorites α-Ti precipitations that are detrimental to the wire ductility. The best JC value was obtained for the sample heat treated at 973K. The improvement of the flux-line pinning was associated with a sharp change of the diffusion layer composition rather than pinning by normal layer interfaces, suggesting a new source of pinning in this kind of material. Nb-Ti-Ta ternary alloys have the potential to be used in superconducting magnets when fields above 12T are required.

Double Dirac point semimetal in 2D material: Ta2Se3

NASA Astrophysics Data System (ADS)

Ma, Yandong; Jing, Yu; Heine, Thomas

2017-06-01

Here, we report by first-principles calculations one new stable 2D Dirac material, Ta2Se3 monolayer. For this system, stable layered bulk phase exists, and exfoliation should be possible. Ta2Se3 monolayer is demonstrated to support two Dirac points close to the Fermi level, achieving the exotic 2D double Dirac semimetal. And like 2D single Dirac and 2D node-line semimetals, spin-orbit coupling could introduce an insulating state in this new class of 2D Dirac semimetals. Moreover, the Dirac feature in this system is layer-dependent and a metal-to-insulator transition is identified in Ta2Se3 when reducing the layer-thickness from bilayer to monolayer. These findings are of fundamental interests and of great importance for nanoscale device applications.

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

NASA Astrophysics Data System (ADS)

Liu, J.-W.; Liao, M.-Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

2014-06-01

A Ta2O5/Al2O3 bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5 layer is prepared by a sputtering-deposition (SD) technique on the Al2O3 buffer layer fabricated by an atomic layer deposition (ALD) technique. The ALD-Al2O3 plays an important role to eliminate plasma damage for the H-diamond surface during SD-Ta2O5 deposition. The dielectric constants of the SD-Ta2O5/ALD-Al2O3 bilayer and single SD-Ta2O5 are as large as 12.7 and 16.5, respectively. The k value of the single SD-Ta2O5 in this study is in good agreement with that of the SD-Ta2O5 on oxygen-terminated diamond. The capacitance-voltage characteristic suggests low interfacial trapped charge density for the SD-Ta2O5/ALD-Al2O3/H-diamond MIS diode. The MISFET with a gate length of 4 µm has a drain current maximum and an extrinsic transconductance of -97.7 mA mm-1 (normalized by gate width) and 31.0 ± 0.1 mS mm-1, respectively. The effective mobility in the H-diamond channel layer is found to be 70.1 ± 0.5 cm2 V-1 s-1.

Functional Conservation and Divergence among Homoeologs of TaSPL20 and TaSPL21, Two SBP-Box Genes Governing Yield-Related Traits in Hexaploid Wheat1[OPEN

PubMed Central

Mao, Xinguo; Li, Ang; Wang, Jingyi; Chang, Xiaoping; Zhang, Xueyong

2017-01-01

Maintaining high and stable yields has become an increasing challenge in wheat breeding due to climate change. Although Squamosa-promoter binding protein (SBP)-box genes have important roles in plant development, very little is known about the actual biological functions of wheat SBP-box family members. Here, we dissect the functional conservation, divergence, and exploitation of homoeologs of two paralogous TaSPL wheat loci during domestication and breeding. TaSPL20 and TaSPL21 were highly expressed in the lemma and palea. Ectopic expressions of TaSPL20/21 in rice exhibited similar functions in terms of promoting panicle branching but had different functions during seed development. We characterized all six TaSPL20/21 genes located across the three homoeologous (A, B, and D) genomes. According to the functional analysis of naturally occurring variants in 20 environments, four favorable haplotypes were identified. Together, they reduced plant height by up to 27.5%, and TaSPL21-6D-HapII increased 1000-grain weight by 9.73%. Our study suggests that TaSPL20 and TaSPL21 homoeologs underwent diversification in function with each evolving its own distinctive characteristics. During domestication and breeding of wheat in China, favorable haplotypes of each set were selected and exploited to varying degrees due to their large effects on plant height and 1000-grain weight. PMID:28424214

The effect of growth sequence on magnetization damping in Ta/CoFeB/MgO structures

NASA Astrophysics Data System (ADS)

Liu, Bo; Huang, Dawei; Gao, Ming; Tu, Hongqing; Wang, Kejie; Ruan, Xuezhong; Du, Jun; Cai, Jian-Wang; He, Liang; Wu, Jing; Wang, Xinran; Xu, Yongbing

2018-03-01

Magnetization damping is a key parameter to control the critical current and the switching speed in magnetic random access memory, and here we report the effect of the growth sequence on the magnetic dynamics properties of perpendicularly magnetized Ta/CoFeB/MgO structures. Ultrathin CoFeB films have been grown between Ta and MgO but with different stack sequences, i.e. substrate/Ta/CoFeB/MgO/Ta and substrate/Ta/MgO/CoFeB/Ta. The magnetization dynamics induced by femtosecond laser was investigated by using all-optical pump-probe measurements. We found that the Gilbert damping constant was modulated by reversing stack structures, which offers the potential to tune the damping parameter by the growth sequence. The Gilbert damping constant was enhanced from 0.017 for substrate/Ta/CoFeB/MgO/Ta to 0.027 for substrate/Ta/MgO/CoFeB/Ta. We believe that this enhancement originates from the increase of intermixing at the CoFeB/Ta when the Ta atom layer was grown after the CoFeB layer.

Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Shoji, Yasuhiro; Ohashi, Yuji; Yokota, Yuui; Chani, Valery I.; Kitahara, Masanori; Kudo, Tetsuo; Kamada, Kei; Kurosawa, Shunsuke; Medvedev, Andrey; Kochurikhin, Vladimir

2016-10-01

Growth of 2-in. diameter Al-substituted Ca3TaGa3Si2O14 crystals by Czochralski method is reported. The crystals were grown from the melt of Ca3TaGa1.5Al1.5Si2O14 composition and had langasite structure. No inclusions of secondary phases were detected in these crystals. The Ca3Ta(Ga,Al)3Si2O14 mixed crystals produced using non-substituted Ca3TaGa3Si2O14 seeds were defective. They had cracks and/or poly-crystalline structure. However, those grown on the seed of approximately Ca3TaGa1.5Al1.5Si2O14 composition were defect-free. Phase diagram of the Ca3TaGa3Si2O14-Ca3TaAl3Si2O14 pseudo-binary system and segregation phenomenon are discussed in some details. Homogeneity of the crystals was evaluated by measuring 2D-mapping of leaky surface acoustic wave (LSAW) velocities for Y-cut Ca3TaGa1.5Al1.5Si2O14 substrate. Although some inhomogeneities were observed due to slight variations in chemical composition, the crystal had acceptable homogeneity for applications in acoustic wave devices exhibiting the LSAW velocity variation within ±0.048%.

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Effect of nickel seed layer on growth of α-V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha; Reddy, G. B.

2015-08-01

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V2O5) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ˜ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V2O5 film deposited on both substrates are carried out by SEM, revealed that features of V2O5 NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

Modification of the structural and magnetic properties of granular FePt films by seed layer conditioning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wicht, S., E-mail: s.wicht@ifw-dresden.de; TU Dresden, Institut für Werkstoffwissenschaft, Helmholtzstraße 10, D-01069 Dresden; Neu, V.

2015-01-07

The steadily increasing amount of digital information necessitates the availability of reliable high capacity magnetic data storage. Here, future hard disk drives with extended areal storage densities beyond 1.0 Tb/in{sup 2} are envisioned by using high anisotropy granular and chemically L1{sub 0}-ordered FePt (002) perpendicular media within a heat-assisted magnetic recording scheme. Perpendicular texturing of the [001] easy axes of the individual grains can be achieved by using MgO seed layers. It is therefore investigated, if and how an Ar{sup +} ion irradiation of the MgO seed layer prior to the deposition of the magnetic material influences the MgO surfacemore » properties and hereby the FePt [001] texture. Structural investigations reveal a flattening of the seed layer surface accompanied by a change in the morphology of the FePt grains. Moreover, the fraction of small second layer particles and the degree of coalescence of the primarily deposited FePt grains strongly increases. As for the magnetic performance, this results in a reduced coercivity along the magnetic easy axis (out of plane) and in enhanced hard axis (in-plane) remanence values. The irradiation induced changes in the magnetic properties of the granular FePt-C films are traced back to the accordingly modified atomic structure of the FePt-MgO interface region.« less

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

Photochemical bonding of epithelial cell-seeded collagen lattice to rat muscle layer for esophageal tissue engineering: a pilot study

NASA Astrophysics Data System (ADS)

Chan, Barbara P.; Sato, M.; Vacanti, Joseph P.; Kochevar, Irene E.; Redmond, Robert W.

2005-04-01

Bilayered tube structures consist of epithelial cell-seeded collagen lattice and muscle layer have been fabricated for esophageal tissue engineering. Good adhesion between layers in order to facilitate cell infiltration and neovascularization in the collagen lattice is required. Previous efforts include using other bioglues such as fibrin glue and silicone tube as the physical support. However, the former is subjected to chances of transmitting blood-born infectious disease and is time consuming while the latter requires a second surgical procedure. The current project aimed to bond the cell-seeded collagen lattice to muscle layer using photochemical bonding, which has previously been demonstrated a rapid and non-thermal procedure in bonding collagenous tissues. Rat esophageal epithelial cells were seeded on collagen lattice and together with the latissimus dorsi muscle layer, were exposed to a photosensitizer rose Bengal at the bonding surface. An argon laser was used to irradiate the approximated layers. Bonding strength was measured during the peeling test of the collagen layer from the muscle layer. Post-bonding cell viability was assessed using a modified NADH-diaphorase microassay. A pilot in vivo study was conducted by directly bonding the cell-seeded collagen layer onto the muscle flap in rats and the structures were characterized histologically. Photochemical bonding was found to significantly increase the adherence at the bonding interface without compromising the cell viability. This indicates the feasibility of using the technique to fabricate multi-layered structures in the presence of living cells. The pilot animal study demonstrated integration of the collagen lattice with the muscle layer at the bonding interface although the subsequent surgical manipulation disturbed the integration at some region. This means that an additional procedure removing the tube could be avoided if the approximation and thus the bonding are optimized. Cell infiltration

Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W).

PubMed

Behera, Nilamani; Guha, Puspendu; Pandya, Dinesh K; Chaudhary, Sujeet

2017-09-13

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α eff ) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t W )/Si (Py = Ni 81 Fe 19 and t W = thickness of β-W), which is in contrast to the increase of α eff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/β-W(t W )/Si system. Because of spin pumping, the interfacial spin mixing conductance (g ↑↓ ) at Py/β-W interface and spin diffusion length (λ SD ) of β-W are found to be 1.63(±0.02) × 10 18 m -2 (1.44(±0.02) × 10 18 m -2 ) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/β-W(t W )/Si (β-W(t W )/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, β-W(2 nm), Cu(2 nm), and β-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/β-W(t W ). However, antidamping is seen only in β-Ta(2,3 nm)/Py(15 nm)/β-W(t W )/Si. This decrease in α eff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and β-W(t W ) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of α eff is observed, which is ascribed to spin pumping from Py to β-W layer.

Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Sun Ho; Lee, Kee Sun; Green Home Energy Technology Center, Cheonan City

Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showedmore » 0.08 of the emissivity, including {approx}61% of the transmittance in the visible region (wavelength: 550 nm).« less

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

NASA Astrophysics Data System (ADS)

Milosavljević, M.; Milinović, V.; Peruško, D.; Grce, A.; Stojanović, M.; Pjević, D.; Mitrić, M.; Kovač, J.; Homewood, K. P.

2011-10-01

The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (˜23 nm) and Ti (˜17 nm) layers of a total thickness ˜200 nm. They were irradiated at room temperature with 200 keV Ar +, to the fluences from 5 × 10 15 to 2 × 10 16 ions/cm 2. The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom ˜130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Δ H f = +2 kJ/mol). It is estimated that up to ˜5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures.

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.

Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less

Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Jeong, Yeon Taek; Dodabalapur, Ananth

2007-11-01

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3Å was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and Ion/Ioff ratio of 0.45cm2/Vs, 0.56V, and 7.5×101, respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

NASA Astrophysics Data System (ADS)

Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

2015-12-01

We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

The Triticum aestivum non-specific lipid transfer protein (TaLtp) gene family: comparative promoter activity of six TaLtp genes in transgenic rice.

PubMed

Boutrot, Freddy; Meynard, Donaldo; Guiderdoni, Emmanuel; Joudrier, Philippe; Gautier, Marie-Françoise

2007-03-01

Plant non-specific lipid transfer proteins (nsLTPs) are encoded by a multigene family and support physiological functions, which remain unclear. We adapted an efficient ligation-mediated polymerase chain reaction (LM-PCR) procedure that enabled isolation of 22 novel Triticum aestivum nsLtp (TaLtp) genes encoding types 1 and 2 nsLTPs. A phylogenetic tree clustered the wheat nsLTPs into ten subfamilies comprising 1-7 members. We also studied the activity of four type 1 and two type 2 TaLtp gene promoters in transgenic rice using the 1-Glucuronidase reporter gene. The activities of the six promoters displayed both overlapping and distinct features in rice. In vegetative organs, these promoters were active in leaves and root vascular tissues while no beta-Glucuronidase (GUS) activity was detected in stems. In flowers, the GUS activity driven by the TaLtp7.2a, TaLtp9.1a, TaLtp9.2d, and TaLtp9.3e gene promoters was associated with vascular tissues in glumes and in the extremities of anther filaments whereas only the TaLtp9.4a gene promoter was active in anther epidermal cells. In developing grains, GUS activity and GUS immunolocalization data evidenced complex patterns of activity of the TaLtp7.1a, TaLtp9.2d, and TaLtp9.4a gene promoters in embryo scutellum and in the grain epicarp cell layer. In contrast, GUS activity driven by TaLtp7.2a, TaLtp9.1a, and TaLtp9.3e promoters was restricted to the vascular bundle of the embryo scutellum. This diversity of TaLtp gene promoter activity supports the hypothesis that the encoded TaLTPs possess distinct functions in planta.

Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Jian; Batra, Vaishali; Han, Hui

The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structuremore » with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.« less

Structure and mechanical properties of a two-layered material produced by the E-beam surfacing of Ta and Nb on the titanium base after multiple rolling

NASA Astrophysics Data System (ADS)

Bataev, V. A.; Golkovski, M. G.; Samoylenko, V. V.; Ruktuev, A. A.; Polyakov, I. A.; Kuksanov, N. K.

2018-04-01

The study has been conducted in line with the current approach to investigation of materials obtained by considerably deep surface alloying of the titanium substrate with Ta, Nb, and Zr. The thickness of the resulting alloyed layer was equal to 2 mm. The coating was formed through weld deposition of a powder with the use of a high-voltage electron beam in the air. It has been lately demonstrated that manufactured such a way alloyed layers possess corrosion resistance which is significantly higher than the resistance of titanium substrates. It has already been shown that such two-layered materials are weldable. The study objective is to investigate the feasibility of rolling for necking the sheets with the Ti-Ta-Nb anticorrosion coating with further fourfold decrease in their thickness. The research is also aimed at investigation of the material properties after rolling. Anticorrosion layers were formed both on CP-titanium and on VT14 (Ti-4Al-3Mo-1 V) durable titanium alloy. The results of chemical composition determination, structure examination, X-ray phase analysis and mechanical properties observations (including bending properties of the alloyed layers) are presented in the paper. The combination of welding, rolling, and bending enables the manufacture of corrosion-resistant vessels and process pipes which are made from the developed material and find technological application.

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Laser damage comparisons of broad-bandwidth, high-reflection optical coatings containing TiO 2, Nb 2O 5, or Ta 2O 5 high-index layers

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-09-21

Broad bandwidth coatings allow angle of incidence flexibility and accommodate spectral shifts due to aging and water absorption. Higher refractive index materials in optical coatings, such as TiO 2, Nb 2O 5, and Ta 2O 5, can be used to achieve broader bandwidths compared to coatings that contain HfO 2 high index layers. We have identified the deposition settings that lead to the highest index, lowest absorption layers of TiO 2, Nb 2O 5, and Ta 2O 5, via e-beam evaporation using ion-assisted deposition. We paired these high index materials with SiO 2 as the low index material to createmore » broad bandwidth high reflection coatings centered at 1054 nm for 45 deg angle of incidence and P polarization. Furthermore, high reflection bandwidths as large as 231 nm were realized. Laser damage tests of these coatings using the ISO 11254 and NIF-MEL protocols are presented, which revealed that the Ta 2O 5/SiO 2 coating exhibits the highest resistance to laser damage, at the expense of lower bandwidth compared to the TiO 2/SiO 2 and Nb 2O 5/SiO 2 coatings.« less

Influence of temperature on oxidation mechanisms of fiber-textured AlTiTaN coatings.

PubMed

Khetan, Vishal; Valle, Nathalie; Duday, David; Michotte, Claude; Delplancke-Ogletree, Marie-Paule; Choquet, Patrick

2014-03-26

The oxidation kinetics of AlTiTaN hard coatings deposited at 265 °C by DC magnetron sputtering were investigated between 700 and 950 °C for various durations. By combining dynamic secondary ion mass spectrometry (D-SIMS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations of the different oxidized coatings, we were able to highlight the oxidation mechanisms involved. The TEM cross-section observations combined with XRD analysis show that a single amorphous oxide layer comprising Ti, Al, and Ta formed at 700 °C. Above 750 °C, the oxide scale transforms into a bilayer oxide comprising an Al-rich upper oxide layer and a Ti/Ta-rich oxide layer at the interface with the coated nitride layer. From the D-SIMS analysis, it could be proposed that the oxidation mechanism was governed primarily by inward diffusion of O for temperatures of ≤700 °C, while at ≥750 °C, it is controlled by outward diffusion of Al and inward diffusion of O. Via a combination of structural and chemical analysis, it is possible to propose that crystallization of rutile lattice favors the outward diffusion of Al within the AlTiTa mixed oxide layer with an increase in the temperature of oxidation. The difference in the mechanisms of oxidation at 700 and 900 °C also influences the oxidation kinetics with respect to oxidation time. Formation of a protective alumina layer decreases the rate of oxidation at 900 °C for long durations of oxidation compared to 700 °C. Along with the oxidation behavior, the enhanced thermal stability of AlTiTaN compared to that of the TiAlN coating is illustrated.

Dependence of spin pumping and spin transfer torque upon Ni81Fe19 thickness in Ta/Ag /Ni 81Fe19/Ag/Co 2MnGe /Ag /Ta spin-valve structures

NASA Astrophysics Data System (ADS)

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.; Hicken, R. J.; Figueroa, A. I.; Baker, A. A.; van der Laan, G.; Duffy, L. B.; Shafer, P.; Klewe, C.; Arenholz, E.; Cavill, S. A.; Childress, J. R.; Katine, J. A.

2017-10-01

Spin pumping has been studied within Ta / Ag / Ni81Fe19 (0-5 nm) / Ag (6 nm) / Co2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni81Fe19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfer torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. This study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.

Abscisic acid metabolic genes of wheat (Triticum aestivum L.): identification and insights into their functionality in seed dormancy and dehydration tolerance.

PubMed

Son, SeungHyun; Chitnis, Vijaya R; Liu, Aihua; Gao, Feng; Nguyen, Tran-Nguyen; Ayele, Belay T

2016-08-01

The three homeologues of wheat NCED2 were identified; the wheat NCED2A and CYP707A1B affect seed ABA level and dormancy but not leaf ABA level and transpirational water loss in Arabidopsis. Biosynthesis and catabolism of abscisic acid (ABA) in plants are primarily regulated by 9-cis-epoxycarotenoid dioxygenases (NCEDs) and ABA 8'-hydroxylase (ABA8'OH), respectively. The present study identified the complete coding sequences of a second NCED gene, designated as TaNCED2, and its homeologues (TaNCED2A, TaNCED2B and TaNCED2D) in hexaploid wheat, and characterized its functionality in seed dormancy and leaf dehydration tolerance using the TaNCED2A homeologue. The study also investigated the role of the B genome copy of the cytochrome P450 monooxygenase 707A1 (CYP707A1) gene of hexaploid wheat (TaCYP707A1B), which encodes ABA8'OH, in regulating the two traits as this has not been studied before. Ectopic expression of TaNCED2A and TaCYP707A1B in Arabidopsis resulted in altered seed ABA level and dormancy with no effect on leaf ABA content and transpirational water loss. To gain insights into the physiological roles of TaNCED2 and TaCYP707A1 in wheat, the study examined their spatiotemporal expression patterns and determined the genomic contributions of transcripts to their total expression.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

PubMed

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

2013-09-30

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

PubMed Central

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S.; Atif, Muhammad; Ansari, Anees A.; Willander, Magnus

2013-01-01

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices. PMID:28788336

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Ectopic expression of Triticum aestivum SERK genes (TaSERKs) control plant growth and development in Arabidopsis.

PubMed

Singh, Akanksha; Khurana, Paramjit

2017-09-28

Somatic embryogenesis receptor kinases (SERKs) belong to a small gene family of receptor-like kinases involved in signal transduction. A total of 54 genes were shortlisted from the wheat genome survey sequence of which 5 were classified as SERKs and 49 were identified as SERK-like (SERLs). Tissue- specific expression of TaSERKs at major developmental stages of wheat corroborates their indispensable role during somatic and zygotic embryogenesis. TaSERK transcripts show inherent differences in their hormonal sensitivities, i.e. TaSERK2 and TaSERK3 elicits auxin- specific responses while TaSERK1, 4 and 5 were more specific towards BR-mediated regulation. The ectopic expression of TaSERK1, 2, 3, 4 and 5 in Arabidopsis led to enhanced plant height, larger silique size and increased seed yield. Zygotic embryogenesis specific genes showed a differential pattern in TaSERK Arabidopsis transgenics specifically in the silique tissues. Elongated hypocotyls and enhanced root growth were observed in the overexpression transgenic lines of all five TaSERKs. The inhibitory action of auxin and brassinosteroid in all the TaSERK transgenic lines indicates their role in regulating root development. The results obtained imply redundant functions of TaSERKs in maintaining plant growth and development.

Interface structure in Cu/Ta2O5/Pt resistance switch: a first-principles study.

PubMed

Xiao, Bo; Watanabe, Satoshi

2015-01-14

The interface structures of a Cu/Ta2O5/Pt resistance switch under various oxidation conditions have been examined from first-principles. The O-rich Cu/Ta2O5 interface is found to be stable within a wide range of O chemical potentials. In this interface structure, a considerable number of interface Cu atoms tend to migrate to the amorphous Ta2O5 (a-Ta2O5) layer, which causes the formation of the Cu2O layer. The interface Cu atoms become more ionized with an increase in the interface O concentration and/or temperature. These ionized Cu(+) ions could function as one of the main sources for the formation of conduction filaments in the Cu/a-Ta2O5/Pt resistance switch. In contrast, the ionization of the interface Cu atoms is not observed in the Cu/crystal-Ta2O5 interface primarily due to the much lower Cu ionic conductivity in crystal-Ta2O5 than that in amorphous state. In addition, the Pt electrode could not be ionized, irrespective of the interface O concentration and temperature. The formation of interface O vacancies in Pt/Ta2O5 is always energetically more stable than that in Cu/Ta2O5, which may be partly responsible for the cone shape of conduction filament formed in the Cu/a-Ta2O5/Pt resistance switch, where the base of the cone lies on the Pt/Ta2O5 interface.

Timing is everything: early degradation of abscission layer is associated with increased seed shattering in U.S. weedy rice

PubMed Central

2011-01-01

Background Seed shattering, or shedding, is an important fitness trait for wild and weedy grasses. U.S. weedy rice (Oryza sativa) is a highly shattering weed, thought to have evolved from non-shattering cultivated ancestors. All U.S. weedy rice individuals examined to date contain a mutation in the sh4 locus associated with loss of shattering during rice domestication. Weedy individuals also share the shattering trait with wild rice, but not the ancestral shattering mutation at sh4; thus, how weedy rice reacquired the shattering phenotype is unknown. To establish the morphological basis of the parallel evolution of seed shattering in weedy rice and wild, we examined the abscission layer at the flower-pedicel junction in weedy individuals in comparison with wild and cultivated relatives. Results Consistent with previous work, shattering wild rice individuals possess clear, defined abscission layers at flowering, whereas non-shattering cultivated rice individuals do not. Shattering weedy rice from two separately evolved populations in the U.S. (SH and BHA) show patterns of abscission layer formation and degradation distinct from wild rice. Prior to flowering, the abscission layer has formed in all weedy individuals and by flowering it is already degrading. In contrast, wild O. rufipogon abscission layers have been shown not to degrade until after flowering has occurred. Conclusions Seed shattering in weedy rice involves the formation and degradation of an abscission layer in the flower-pedicel junction, as in wild Oryza, but is a developmentally different process from shattering in wild rice. Weedy rice abscission layers appear to break down earlier than wild abscission layers. The timing of weedy abscission layer degradation suggests that unidentified regulatory genes may play a critical role in the reacquisition of shattering in weedy rice, and sheds light on the morphological basis of parallel evolution for shattering in weedy and wild rice. PMID:21235796

Timing is everything: early degradation of abscission layer is associated with increased seed shattering in U.S. weedy rice.

PubMed

Thurber, Carrie S; Hepler, Peter K; Caicedo, Ana L

2011-01-14

Seed shattering, or shedding, is an important fitness trait for wild and weedy grasses. U.S. weedy rice (Oryza sativa) is a highly shattering weed, thought to have evolved from non-shattering cultivated ancestors. All U.S. weedy rice individuals examined to date contain a mutation in the sh4 locus associated with loss of shattering during rice domestication. Weedy individuals also share the shattering trait with wild rice, but not the ancestral shattering mutation at sh4; thus, how weedy rice reacquired the shattering phenotype is unknown. To establish the morphological basis of the parallel evolution of seed shattering in weedy rice and wild, we examined the abscission layer at the flower-pedicel junction in weedy individuals in comparison with wild and cultivated relatives. Consistent with previous work, shattering wild rice individuals possess clear, defined abscission layers at flowering, whereas non-shattering cultivated rice individuals do not. Shattering weedy rice from two separately evolved populations in the U.S. (SH and BHA) show patterns of abscission layer formation and degradation distinct from wild rice. Prior to flowering, the abscission layer has formed in all weedy individuals and by flowering it is already degrading. In contrast, wild O. rufipogon abscission layers have been shown not to degrade until after flowering has occurred. Seed shattering in weedy rice involves the formation and degradation of an abscission layer in the flower-pedicel junction, as in wild Oryza, but is a developmentally different process from shattering in wild rice. Weedy rice abscission layers appear to break down earlier than wild abscission layers. The timing of weedy abscission layer degradation suggests that unidentified regulatory genes may play a critical role in the reacquisition of shattering in weedy rice, and sheds light on the morphological basis of parallel evolution for shattering in weedy and wild rice.

Adipose tissue-derived stem cell-seeded small intestinal submucosa for tunica albuginea grafting and reconstruction

PubMed Central

Ma, Limin; Yang, Yijun; Sikka, Suresh C.; Kadowitz, Philip J.; Ignarro, Louis J.; Abdel-Mageed, Asim B.; Hellstrom, Wayne J. G.

2012-01-01

Porcine small intestinal submucosa (SIS) has been widely used in tunica albuginea (TA) reconstructive surgery. Adipose tissue-derived stem cells (ADSCs) can repair damaged tissue, augment cellular differentiation, and stimulate release of multiple growth factors. The aim of this rat study was to assess the feasibility of seeding ADSCs onto SIS grafts for TA reconstruction. Here, we demonstrate that seeding syngeneic ADSCs onto SIS grafts (SIS-ADSC) resulted in significant cavernosal tissue preservation and maintained erectile responses, similar to controls, in a rat model of bilateral incision of TA, compared with sham-operated animals and rats grafted with SIS graft (SIS) alone. In addition to increased TGF-β1 and FGF-2 expression levels, cross-sectional studies of the rat penis with SIS and SIS-ADSC revealed mild to moderate fibrosis and an increase of 30% and 40% in mean diameter in flaccid and erectile states, respectively. SIS grafting induced transcriptional up-regulation of iNOS and down-regulation of endothelial NOS, neuronal NOS, and VEGF, an effect that was restored by seeding ADCSs on the SIS graft. Taken together, these data show that rats undergoing TA incision with autologous SIS-ADSC grafts maintained better erectile function compared with animals grafted with SIS alone. This study suggests that SIS-ADSC grafting can be successfully used for TA reconstruction procedures and can restore erectile function. PMID:22308363

Wheat Transcription Factor TaAREB3 Participates in Drought and Freezing Tolerances in Arabidopsis.

PubMed

Wang, Jingyi; Li, Qian; Mao, Xinguo; Li, Ang; Jing, Ruilian

2016-01-01

AREB (ABA response element binding) proteins in plants play direct regulatory roles in response to multiple stresses, but their functions in wheat (Triticum aestivum L.) are not clear. In the present study, TaAREB3, a new member of the AREB transcription factor family, was isolated from wheat. Sequence analysis showed that the TaAREB3 protein is composed of three parts, a conserved N-terminal, a variable M region, and a conserved C-terminal with a bZIP domain. It belongs to the group A subfamily of bZIP transcription factors. TaAREB3 was constitutively expressed in stems, leaves, florets, anthers, pistils, seeds, and most highly, in roots. TaAREB3 gene expression was induced with abscisic acid (ABA) and low temperature stress, and its protein was localized in the nucleus when transiently expressed in tobacco epidermal cells and stably expressed in transgenic Arabidopsis. TaAREB3 protein has transcriptional activation activity, and can bind to the ABRE cis-element in vitro. Overexpression of TaAREB3 in Arabidopsis not only enhanced ABA sensitivity, but also strengthened drought and freezing tolerances. TaAREB3 also activated RD29A, RD29B, COR15A, and COR47 by binding to their promoter regions in transgenic Arabidopsis. These results demonstrated that TaAREB3 plays an important role in drought and freezing tolerances in Arabidopsis.

Wheat Transcription Factor TaAREB3 Participates in Drought and Freezing Tolerances in Arabidopsis

PubMed Central

Wang, Jingyi; Li, Qian; Mao, Xinguo; Li, Ang; Jing, Ruilian

2016-01-01

AREB (ABA response element binding) proteins in plants play direct regulatory roles in response to multiple stresses, but their functions in wheat (Triticum aestivum L.) are not clear. In the present study, TaAREB3, a new member of the AREB transcription factor family, was isolated from wheat. Sequence analysis showed that the TaAREB3 protein is composed of three parts, a conserved N-terminal, a variable M region, and a conserved C-terminal with a bZIP domain. It belongs to the group A subfamily of bZIP transcription factors. TaAREB3 was constitutively expressed in stems, leaves, florets, anthers, pistils, seeds, and most highly, in roots. TaAREB3 gene expression was induced with abscisic acid (ABA) and low temperature stress, and its protein was localized in the nucleus when transiently expressed in tobacco epidermal cells and stably expressed in transgenic Arabidopsis. TaAREB3 protein has transcriptional activation activity, and can bind to the ABRE cis-element in vitro. Overexpression of TaAREB3 in Arabidopsis not only enhanced ABA sensitivity, but also strengthened drought and freezing tolerances. TaAREB3 also activated RD29A, RD29B, COR15A, and COR47 by binding to their promoter regions in transgenic Arabidopsis. These results demonstrated that TaAREB3 plays an important role in drought and freezing tolerances in Arabidopsis. PMID:26884722

Dependence of spin pumping and spin transfer torque upon Ni 81 Fe 19 thickness in Ta / Ag / Ni 81 Fe 19 / Ag / Co 2 MnGe / Ag / Ta spin-valve structures

DOE PAGES

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.; ...

2017-10-18

Spin pumping has been studied within Ta / Ag / Ni 81Fe 19 (0–5 nm) / Ag (6 nm) / Co 2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni 81Fe 19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co 2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfermore » torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. Furthermore, this study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.« less

Dependence of spin pumping and spin transfer torque upon Ni 81 Fe 19 thickness in Ta / Ag / Ni 81 Fe 19 / Ag / Co 2 MnGe / Ag / Ta spin-valve structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.

Spin pumping has been studied within Ta / Ag / Ni 81Fe 19 (0–5 nm) / Ag (6 nm) / Co 2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni 81Fe 19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co 2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfermore » torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. Furthermore, this study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.« less

Phase relationships in the BaO-Ga2O3-Ta2O5 system and the structure of Ba6Ga21TaO40.

PubMed

Cao, Jiang; Yu, Xiaodi; Kuang, Xiaojun; Su, Qiang

2012-07-16

Phase relationships in the BaO-Ga(2)O(3)-Ta(2)O(5) ternary system at 1200 °C were determined. The A(6)B(10)O(30) tetragonal tungsten bronze (TTB) related solution in the BaO-Ta(2)O(5) subsystem dissolved up to ~11 mol % Ga(2)O(3), forming a ternary trapezoid-shaped TTB-related solid solution region defined by the BaTa(2)O(6), Ba(1.1)Ta(5)O(13.6), Ba(1.58)Ga(0.92)Ta(4.08)O(13.16), and Ba(6)GaTa(9)O(30) compositions in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Two ternary phases Ba(6)Ga(21)TaO(40) and eight-layer twinned hexagonal perovskite solid solution Ba(8)Ga(4-x)Ta(4+0.6x)O(24) were confirmed in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Ba(6)Ga(21)TaO(40) crystallized in a monoclinic cell of a = 15.9130(2) Å, b = 11.7309(1) Å, c = 5.13593(6) Å, β = 107.7893(9)°, and Z = 1 in space group C2/m. The structure of Ba(6)Ga(21)TaO(40) was solved by the charge flipping method, and it represents a three-dimensional (3D) mixed GaO(4) tetrahedral and GaO(6)/TaO(6) octahedral framework, forming mixed 1D 5/6-fold tunnels that accommodate the Ba cations along the c axis. The electrical property of Ba(6)Ga(21)TaO(40) was characterized by using ac impedance spectroscopy.

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE PAGES

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; ...

2016-09-09

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henegar, Alex J.; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved andmore » sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.« less

Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{submore » 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.« less

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Label-free detection of biomolecules with Ta2O5-based field effect devices

NASA Astrophysics Data System (ADS)

Branquinho, Rita Maria Mourao Salazar

Field-effect-based devices (FEDs) are becoming a basic structural element in a new generation of micro biosensors. Their numerous advantages such as small size, labelfree response and versatility, together with the possibility of on-chip integration of biosensor arrays with a future prospect of low-cost mass production, make their development highly desirable. The present thesis focuses on the study and optimization of tantalum pentoxide (Ta2O5) deposited by rf magnetron sputtering at room temperature, and their application as sensitive layer in biosensors based on field effect devices (BioFEDs). As such, the influence of several deposition parameters and post-processing annealing temperature and surface plasma treatment on the film¡¦s properties was investigated. Electrolyte-insulator-semiconductor (EIS) field-effect-based sensors comprising the optimized Ta2O5 sensitive layer were applied to the development of BioFEDs. Enzyme functionalized sensors (EnFEDs) were produced for penicillin detection. These sensors were also applied to the label free detection of DNA and the monitoring of its amplification via polymerase chain reaction (PCR), real time PCR (RT-PCR) and loop mediated isothermal amplification (LAMP). Ion sensitive field effect transistors (ISFETs) based on semiconductor oxides comprising the optimized Ta2O5 sensitive layer were also fabricated. EIS sensors comprising Ta2O5 films produced with optimized conditions demonstrated near Nernstian pH sensitivity, 58+/-0.3 mV/pH. These sensors were successfully applied to the label-free detection of penicillin and DNA. Penicillinase functionalized sensors showed a 29+/-7 mV/mM sensitivity towards penicillin detection up to 4 mM penicillin concentration. DNA detection was achieved with 30 mV/mugM sensitivity and DNA amplification monitoring with these sensors showed comparable results to those obtained with standard fluorescence based methods. Semiconductor oxides-based ISFETs with Ta2O5 sensitive layer were

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

NASA Astrophysics Data System (ADS)

Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

2000-09-01

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

The homeodomain transcription factor TaHDZipI-2 from wheat regulates frost tolerance, flowering time and spike development in transgenic barley.

PubMed

Kovalchuk, Nataliya; Chew, William; Sornaraj, Pradeep; Borisjuk, Nikolai; Yang, Nannan; Singh, Rohan; Bazanova, Natalia; Shavrukov, Yuri; Guendel, Andre; Munz, Eberhard; Borisjuk, Ljudmilla; Langridge, Peter; Hrmova, Maria; Lopato, Sergiy

2016-07-01

Homeodomain leucine zipper class I (HD-Zip I) transcription factors (TFs) play key roles in the regulation of plant growth and development under stresses. Functions of the TaHDZipI-2 gene isolated from the endosperm of developing wheat grain were revealed. Molecular characterization of TaHDZipI-2 protein included studies of its dimerisation, protein-DNA interactions and gene activation properties using pull-down assays, in-yeast methods and transient expression assays in wheat cells. The analysis of TaHDZipI-2 gene functions was performed using transgenic barley plants. It included comparison of developmental phenotypes, yield components, grain quality, frost tolerance and the levels of expression of potential target genes in transgenic and control plants. Transgenic TaHDZipI-2 lines showed characteristic phenotypic features that included reduced growth rates, reduced biomass, early flowering, light-coloured leaves and narrowly elongated spikes. Transgenic lines produced 25-40% more seeds per spike than control plants, but with 50-60% smaller grain size. In vivo lipid imaging exposed changes in the distribution of lipids between the embryo and endosperm in transgenic seeds. Transgenic lines were significantly more tolerant to frost than control plants. Our data suggest the role of TaHDZipI-2 in controlling several key processes underlying frost tolerance, transition to flowering and spike development. © 2016 The Authors. New Phytologist © 2016 New Phytologist Trust.

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

NASA Astrophysics Data System (ADS)

Yan, S. A.; Zhao, W.; Guo, H. X.; Xiong, Y.; Tang, M. H.; Li, Z.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.

2015-01-01

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Ternary metal-rich sulfide with a layered structure

DOEpatents

Franzen, Hugo F.; Yao, Xiaoqiang

1993-08-17

A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

TaEDS1 genes positively regulate resistance to powdery mildew in wheat.

PubMed

Chen, Guiping; Wei, Bo; Li, Guoliang; Gong, Caiyan; Fan, Renchun; Zhang, Xiangqi

2018-04-01

Three EDS1 genes were cloned from common wheat and were demonstrated to positively regulate resistance to powdery mildew in wheat. The EDS1 proteins play important roles in plant basal resistance and TIR-NB-LRR protein-triggered resistance in dicots. Until now, there have been very few studies on EDS1 in monocots, and none in wheat. Here, we report on three common wheat orthologous genes of EDS1 family (TaEDS1-5A, 5B and 5D) and their function in powdery mildew resistance. Comparisons of these genes with their orthologs in diploid ancestors revealed that EDS1 is a conserved gene family in Triticeae. The cDNA sequence similarity among the three TaEDS1 genes was greater than 96.5%, and they shared sequence similarities of more than 99.6% with the respective orthologs from diploid ancestors. The phylogenetic analysis revealed that the EDS1 family originated prior to the differentiation of monocots and dicots, and EDS1 members have since undergone clear structural differentiation. The transcriptional levels of TaEDS1 genes in the leaves were obviously higher than those of the other organs, and they were induced by Blumeria graminis f. sp. tritici (Bgt) infection and salicylic acid (SA) treatment. The BSMV-VIGS experiments indicated that knock-down the transcriptional levels of the TaEDS1 genes in a powdery mildew-resistant variety of common wheat compromised resistance. Contrarily, transient overexpression of TaEDS1 genes in a susceptible common wheat variety significantly reduced the haustorium index and attenuated the growth of Bgt. Furthermore, the expression of TaEDS1 genes in the Arabidopsis mutant eds1-1 complemented its susceptible phenotype to powdery mildew. The above evidences strongly suggest that TaEDS1 acts as a positive regulator and confers resistance against powdery mildew in common wheat.

RNAi-mediated male sterility of tobacco by silencing TA29.

PubMed

Nawaz-ul-Rehman, Muhammad Shah; Mansoor, Shahid; Khan, Asif Ali; Zafar, Yusuf; Briddon, Rob W

2007-06-01

The superior performance of F1 hybrids has a significant impact on agricultural productivity. For commercial application, the availability of an efficient system for obtaining male-sterile lines of crops is an essential prerequisite. Here we have investigated the use of RNA interference (RNAi) technology to silence a male-specific gene in the model host tobacco. TA29 is expressed exclusively in anthers at the time of microspore development. About 10 out of 13 tobacco lines transformed with a hairpin RNAi construct containing TA29 sequences were male sterile. Transgenic plants were phenotypically indistinguishable from non-transgenic plants. At the anthesis stage, pollen grains from transgenic, male-sterile plants were aborted and lysed in comparison to the round and fully developed pollen in non-transgenic plants. Microscopic analysis of anthers showed selective degradation of tapetum in transgenic plants with no microspore development. One week after self-pollination, the ovules of non-transgenic plants were double the size of those in transgenic plants, due to successful self-fertilization. Male sterile transgenic plants set seed normally, when cross-pollinated with pollen from non-transgenic plants, confirming no adverse effect on the female parts of the flower. These results show that silencing of male-specific genes by RNAi is potentially a useful tool for generating male-sterile lines for producing hybrid seed.

TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

NASA Astrophysics Data System (ADS)

Nakamura, Daisuke; Kimura, Taishi; Narita, Tetsuo; Suzumura, Akitoshi; Kimoto, Tsunenobu; Nakashima, Kenji

2017-11-01

A novel sintered tantalum carbide coating (SinTaC) prepared via a wet ceramic process is proposed as an approach to reducing the production cost and improving the crystal quality of bulk-grown crystals and epitaxially grown films of wide-bandgap semiconductors. Here, we verify the applicability of the SinTaC components as susceptors for chemical vapor deposition (CVD)-SiC and metal-organic chemical vapor deposition (MOCVD)-GaN epitaxial growth in terms of impurity incorporation from the SinTaC layers and also clarify the surface-roughness controllability of SinTaC layers and its advantage in CVD applications. The residual impurity elements in the SinTaC layers were confirmed to not severely incorporate into the CVD-SiC and MOCVD-GaN epilayers grown using the SinTaC susceptors. The quality of the epilayers was also confirmed to be equivalent to that of epilayers grown using conventional susceptors. Furthermore, the surface roughness of the SinTaC components was controllable over a wide range of average roughness (0.4 ≤ Ra ≤ 5 μm) and maximum height roughness (3 ≤ Rz ≤ 36 μm) through simple additional surface treatment procedures, and the surface-roughened SinTaC susceptor fabricated using these procedures was predicted to effectively reduce thermal stress on epi-wafers. These results confirm that SinTaC susceptors are applicable to epitaxial growth processes and are advantageous over conventional susceptor materials for reducing the epi-cost and improving the quality of epi-wafers.

Seed Anatomy and Water Uptake in Relation to Seed Dormancy in Opuntia tomentosa (Cactaceae, Opuntioideae)

PubMed Central

Orozco-Segovia, A.; Márquez-Guzmán, J.; Sánchez-Coronado, M. E.; Gamboa de Buen, A.; Baskin, J. M.; Baskin, C. C.

2007-01-01

Background and Aims There is considerable confusion in the literature concerning impermeability of seeds with ‘hard’ seed coats, because the ability to take up (imbibe) water has not been tested in most of them. Seeds of Opuntia tomentosa were reported recently to have a water-impermeable seed coat sensu lato (i.e. physical dormancy), in combination with physiological dormancy. However, physical dormancy is not known to occur in Cactaceae. Therefore, the aim of this study was to determine if seeds of O. tomentosa are water-permeable or water-impermeable, i.e. if they have physical dormancy. Methods The micromorphology of the seed coat and associated structures were characterized by SEM and light microscopy. Permeability of the seed-covering layers was assessed by an increase in mass of seeds on a wet substrate and by dye-tracking and uptake of tritiated water by intact versus scarified seeds. Key Results A germination valve and a water channel are formed in the hilum–micropyle region during dehydration and ageing in seeds of O. tomentosa. The funicular envelope undoubtedly plays a role in germination of Opuntia seeds via restriction of water uptake and mechanical resistance to expansion of the embryo. However, seeds do not exhibit any of three features characteristic of those with physical dormancy. Thus, they do not have a water-impermeable layer(s) of palisade cells (macrosclereids) or a water gap sensu stricto and they imbibe water without the seed coat being disrupted. Conclusions Although dormancy in seeds of this species can be broken by scarification, they have physiological dormancy only. Further, based on information in the literature, it is concluded that it is unlikely that any species of Opuntia has physical dormancy. This is the first integrative study of the anatomy, dynamics of water uptake and dormancy in seeds of Cactaceae subfamily Opuntioideae. PMID:17298989

TaRAR1 and TaSGT1 associate with TaHsp90 to function in bread wheat (Triticum aestivum L.) seedling growth and stripe rust resistance.

PubMed

Wang, Guan-Feng; Fan, Renchun; Wang, Xianping; Wang, Daowen; Zhang, Xiangqi

2015-04-01

RAR1 and SGT1 are important co-chaperones of Hsp90. We previously showed that TaHsp90.1 is required for wheat seedling growth, and that TaHsp90.2 and TaHsp90.3 are essential for resistance (R) gene mediated resistance to stripe rust fungus. Here, we report the characterization of TaRAR1 and TaSGT1 genes in bread wheat. TaRAR1 and TaSGT1 each had three homoeologs, which were located on wheat groups 2 and 3 chromosomes, respectively. Strong inhibition of seedling growth was observed after silencing TaSGT1 but not TaRAR1. In contrast, decreasing the expression of TaRAR1 or TaSGT1 could all compromise R gene mediated resistance to stripe rust fungus infection. Protein-protein interactions were found among TaRAR1, TaSGT1 and TaHsp90. The N-terminus of TaHsp90, the CHORD-I and CHORD-II domains of TaRAR1 and the CS domain of TaSGT1 may be instrumental for the interactions among the three proteins. Based on this work and our previous study on TaHsp90, we speculate that the TaSGT1-TaHsp90.1 interaction is important for maintaining bread wheat seedling growth. The TaRAR1-TaSGT1-TaHsp90.2 and TaRAR1-TaSGT1-TaHsp90.3 interactions are involved in controlling the resistance to stripe rust disease. The new information obtained here should aid further functional investigations of TaRAR1-TaSGT1-TaHsp90 complexes in regulating bread wheat growth and disease resistance.

Epitaxial Fe16N2 thin film on nonmagnetic seed layer

NASA Astrophysics Data System (ADS)

Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

2018-05-01

Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

PubMed

Zhao, J L; Teo, K L; Zheng, K; Sun, X W

2016-03-18

Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong, E-mail: phiksou@ust.hk

CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

PubMed

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D; Renevier, Hubert; Consonni, Vincent

2017-03-03

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10 7 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

NASA Astrophysics Data System (ADS)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscaleengineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol–gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on themore » macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscaleengineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.« less

Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

NASA Astrophysics Data System (ADS)

Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

1995-09-01

Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

Antidamping spin-orbit torques in epitaxial-Py(100)/β-Ta

NASA Astrophysics Data System (ADS)

Tiwari, Dhananjay; Behera, Nilamani; Kumar, Akash; Dürrenfeld, Philipp; Chaudhary, Sujeet; Pandya, D. K.; Åkerman, Johan; Muduli, P. K.

2017-12-01

We perform spin torque ferromagnetic resonance measurements on the Si(100)/TiN(100)/epi-Py(100)/β-Ta system. We demonstrate current induced modulation of the Gilbert damping constant, which is about 30% for a current density of 6.25 × 109 A/m2. We show that the observed modulation of the Gilbert damping constant cannot be explained by spin transfer torques arising from the spin Hall effect of the β-Ta layer. An additional mechanism such as antidamping spin-orbit torque resulting from the interface or the crystalline structure of Py thin films needs to be considered.

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

NASA Astrophysics Data System (ADS)

Gao, Shuang; Zeng, Fei; Li, Fan; Wang, Minjuan; Mao, Haijun; Wang, Guangyue; Song, Cheng; Pan, Feng

2015-03-01

The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ~6 × 102 is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (~44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ~6 × 102 is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to

Evolutionary Optimization of a Charge Transfer Ionic Potential Model for Ta/Ta-Oxide Heterointerfaces

DOE PAGES

Sasikumar, Kiran; Narayanan, Badri; Cherukara, Mathew; ...

2017-03-19

Heterostructures of tantalum and its oxide are of tremendous technological interest for a myriad of technological applications, including electronics, thermal management, catalysis and biochemistry. In particular, local oxygen stoichiometry variation in TaO x memristors comprising of thermodynamically stable metallic (Ta) and insulating oxide (Ta 2O 5) have been shown to result in fast switching on the subnanosecond timescale over a billion cycles. This rapid switching opens up the potential for advanced functional platforms such as stateful logic operations and neuromorphic computation. Despite its broad importance, an atomistic scale understanding of oxygen stoichiometry variation across Ta/TaO x heterointerfaces, such as duringmore » early stages of oxidation and oxide growth, is not well understood. This is mainly due to the lack of a unified interatomic potential model for tantalum oxides that can accurately describe metallic (Ta), ionic (TaO x) as well as mixed (Ta/TaO x interfaces) bonding environments simultaneously. To address this challenge, we introduce a Charge Transfer Ionic Potential (CTIP) model for Ta/Ta-oxide system by training against lattice parameters, cohesive energies, equations of state (EOS), elastic properties, and surface energies of the various experimentally observed Ta 2O 5 polymorphs (hexagonal, orthorhombic and monoclinic) obtained from density functional theory (DFT) calculations. The best CTIP parameters are determined by employing a global optimization scheme driven by genetic algorithms followed by local Simplex optimization. Our newly developed CTIP potential accurately predicts structure, thermodynamics, energetic ordering of polymorphs, as well as elastic and surface properties of both Ta and Ta 2O 5, in excellent agreement with DFT calculations and experiments. We employ our newly parameterized CTIP potential to investigate the early stages of oxidation and atomic scale mechanisms associated with oxide growth on Ta surface

Synthesis and characterization of nanotubes from misfit compounds (LnS)1+yTaS2 (Ln= Pr, Sm, Gd, Yb).

PubMed

Tenne, Reshef; Serra, Marco; Stolovas, Dalit; Houben, Lothar; Popovitz-Biro, Ronit; Pinkas, Iddo; Kampmann, Felix; Maultzsch, Janina; Joselevich, Ernesto

2018-06-06

The synthesis and characterization of nanotubes from the misfit layered compounds (MLC) (LnS)1+yTaS2 (shortly denoted as LnS-TaS2) (Ln= Pr, Sm, Gd and Yb), not reported before, are described (the bulk compound YbS-LaS2 was not documented before). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) show that the interlayer spacing along the c-axis decrease with increasing atomic number of the lanthanide atom, suggesting tighter interaction between the LnS layer and the TaS2 for the late lanthanides. The Raman spectra of the tubules were studied and compared to the bulk MLC compounds. Like bulk MLC, the Raman spectra can be divided into the low frequency modes (110-150 cm-1) of the LnS lattice and the high frequency (250-400 cm-1) of the TaS2 lattice. The Raman spectra indicate that the vibrational lattice modes of the strained layers in the tubes are stiffer than those in the bulk compounds. Furthermore, the modes of the late lanthanides are higher in energy compared with the earlier lanthanides, suggesting larger charge transfer between the LnS and the TaS2 layers for the late lanthanides. Polarized Raman measurements showed the expected binodal intensity profile (antenna effect). The intensity ratio of the Raman signal showed that the E2g mode of TaS2 is more sensitive to the light polarization effect than its A1g mode. These nanotubes are expected to reveal interesting low temperature quasi-1D transport behavior. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tandem Core–Shell Si–Ta 3N 5 Photoanodes for Photoelectrochemical Water Splitting

DOE PAGES

Narkeviciute, Ieva; Chakthranont, Pongkarn; Mackus, Adriaan J. M.; ...

2016-11-22

Here, nanostructured core–shell Si–Ta 3N 5 photoanodes were designed and synthesized to overcome charge transport limitations of Ta 3N 5 for photoelectrochemical water splitting. The core–shell devices were fabricated by atomic layer deposition of amorphous Ta 2O 5 onto nanostructured Si and subsequent nitridation to crystalline Ta 3N 5. Nanostructuring with a thin shell of Ta 3N 5 results in a 10-fold improvement in photocurrent compared to a planar device of the same thickness. In examining thickness dependence of the Ta 3N 5 shell from 10 to 70 nm, superior photocurrent and absorbed-photon-to-current efficiencies are obtained from the thinner Tamore » 3N 5 shells, indicating minority carrier diffusion lengths on the order of tens of nanometers. The fabrication of a heterostructure based on a semiconducting, n-type Si core produced a tandem photoanode with a photocurrent onset shifted to lower potentials by 200 mV. CoTiO x and NiO x water oxidation cocatalysts were deposited onto the Si–Ta 3N 5 to yield active photoanodes that with NiO x retained 50–60% of their maximum photocurrent after 24 h chronoamperometry experiments and are thus among the most stable Ta 3N 5 photoanodes reported to date.« less

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

PubMed Central

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-01-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS. PMID:26365532

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

NASA Astrophysics Data System (ADS)

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-09-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS.

[Dynamics of seed rain of Tripterygium hypoglaucum and soil seed bank].

PubMed

Zhang, Zhi-Wei; Wei, Yong-Sheng; Liu, Xiang; Su, Shu; Qu, Xian-You; Wang, Chang-Hua

2017-11-01

Tripterygium hypoglaucum is an endangered species in arid areas of Xiannvshan Chongqing, China. The dynamic characteristics of seed rain and soil seed bank of T. hypoglaucum were studied in this paper．Results showed that T. hypoglaucum years of mature seeds distribution number up to October; the seed rain occurred from the last ten-day of September to in the first ten-day of November and the peak of scattered seed rain concentrated in the October．The numbers of soil seed bank at 2-5 cm soil layer,mainly concentrated in the 1.5-3.5 m range. T. hypoglaucum seeds to the wind as a force for transmission, the transmission ability is strong, but in the process of natural reproduction, full mature seed rate is low, the soil seed bank seeds seed short-lived factors these were unfavorable for the natural reproduction of T. hypoglaucum population. Copyright© by the Chinese Pharmaceutical Association.

Modeling of erosion and deposition patterns on C-W and W-Ta twin limiters exposed to the TEXTOR edge plasmas

NASA Astrophysics Data System (ADS)

Ohya, K.; Tanabe, T.; Rubel, M.; Wada, M.; Ohgo, T.; Hirai, T.; Philipps, V.; Kirschner, A.; Pospieszczyk, A.; Huber, A.; Sergienko, G.; Brezinsek, S.; Noda, N.

2004-08-01

The erosion and deposition patterns on tungsten and tantalum test limiters exposed to the TEXTOR deuterium plasma containing a small amount of C impurity are simulated with the modified EDDY code. At the very top of the W and Ta limiters, there occurs neither erosion nor deposition, but the erosion proceeds slowly along the surface. When approaching the edge, the surface is covered by a thick C layer, which shows a very sharp boundary similar to the observation in surface measurements. In the erosion zone, the re-deposited carbon forms a W (Ta)-C mixed layer with small C concentration. Assumptions for chemical erosion yields of ˜0.01 for W and <0.005 for Ta fit the calculated widths of the deposition zone to the experimentally determined values. Possible reasons for the difference between W and Ta are discussed.

The role of the (111) texture on the exchange bias and interlayer coupling effects observed in sputtered NiFe/IrMn/Co trilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castro, I. L.; Nascimento, V. P.; Passamani, E. C.

2013-05-28

Magnetic properties of sputtered NiFe/IrMn/Co trilayers grown on different seed layers (Cu or Ta) deposited on Si (100) substrates were investigated by magnetometry and ferromagnetic resonance measurements. Exchange bias effect and magnetic spring behavior have been studied by changing the IrMn thickness. As shown by X-ray diffraction, Ta and Cu seed layers provoke different degrees of (111) fcc-texture that directly affect the exchange bias and indirectly modify the exchange spring coupling behavior. Increasing the IrMn thickness, it was observed that the coupling angle between the Co and NiFe ferromagnetic layers increases for the Cu seed system, but it reduces formore » the Ta case. The results were explained considering (i) different anisotropies of the Co and IrMn layers induced by the different degree of the (111) texture and (ii) the distinct exchange bias set at the NiFe/IrMn and IrMn/Co interfaces in both systems. The NiFe and Co interlayer coupling angle is strongly correlated with both exchange bias and exchange magnetic spring phenomena. It was also shown that the highest exchange bias field occurs when an unstressed L1{sub 2} IrMn structure is stabilized.« less

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

NASA Astrophysics Data System (ADS)

Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

2017-05-01

The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Alnoor, Hatim; Pozina, Galia; Khranovskyy, Volodymyr; Liu, Xianjie; Iandolo, Donata; Willander, Magnus; Nur, Omer

2016-04-01

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (˜575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.

Synthesis, processing and properties of TaC-TaB2-C Ceramics

DTIC Science & Technology

2010-01-01

powder used. • A very important conclusion from the present study is that the grain size of nominally pure TaC ceramics is a strong function of carbon...ceramics at temperatures as low as 1500 ◦C. The grain size of nominally pure TaC ceramics was a strong function of carbon stoichiometry. Enhanced grain...evaluate the properties of ceramics in the TaC–TaB2–C system. Published by Elsevier Ltd. Keywords: A . Sintering; B. Microstructure; D. Carbides; D. Carbon

Fabrication of needle-like ZnO nanorods arrays by a low-temperature seed-layer growth approach in solution

NASA Astrophysics Data System (ADS)

Zhang, Haimin; Quan, Xie; Chen, Shuo; Zhao, Huimin

2007-11-01

Uniform, large-scale, and well-aligned needle-like ZnO nanorods with good photoluminescence and photocatalysis properties on Zn substrates, have been successfully fabricated using a simple low-temperature seed-layer growth approach in solution (50 °C). The formation of ZnO seed-layer by the anodic oxidation technique (AOT) plays an important role in the subsequent growth of highly oriented ZnO nanorods arrays. Temperature also proved to be a significant factor in the growth of ZnO nanorods and had a great effect on their optical properties. X-ray diffraction (XRD) analysis, selected-area electron diffraction (SAED) pattern and high-resolution TEM (HRTEM) indicated that the needle-like ZnO nanorods were single crystal in nature and that they had grown up preferentially along the [0001] direction. The well-aligned ZnO nanorods arrays on Zn substrates exhibited strong UV emission at around 380 nm at room temperature. To investigate their potential as photocatalysts, degradation of pentachlorophenol (PCP) in aqueous solution was carried out using photocatalytic processes, with comparison to direct photolysis. After 1 h, the degradation efficiencies of PCP by direct photolysis and photocatalytic processes achieved 57% and 76% under given experimental conditions, respectively. This improved degradation efficiency of PCP illustrates that ZnO nanorods arrays on Zn substrates have good photocatalytic activity. This simple low-temperature seed-layer growth approach in solution resulted in the development of an effective and low-cost fabrication process for high-quality ZnO nanorods arrays with good optical and photocatalytic properties that can be applicable in many fields such as photocatalysis, photovoltaic cells, luminescent sensors, and photoconductive sensors.

Polytypism, polymorphism, and superconductivity in TaSe 2 –xTe x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Huixia; Xie, Weiwei; Tao, Jing

2015-03-03

Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO₂ are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivitymore » of TaSe₂, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe 2-xTe x solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. Thus, the reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of T c on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.« less

Modification of Magnetic Nanocontact Structure by a Bias-Voltage-Induced Stress and Its Influence on Magnetoresistance Effect in TaOx Nano-Oxide Layer Spin Valve

NASA Astrophysics Data System (ADS)

Miyake, Kousaku; Saki, Yosinobu; Suzuki, Ayako; Kawasaki, Shohei; Doi, Masaaki; Sahashi, Masashi

2012-06-01

A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaOx nano-oxide layer (NOL) as the spacer layer. Current-perpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.

On the relationship between image intensity and velocity in a turbulent boundary layer seeded with smoke particles

NASA Astrophysics Data System (ADS)

Melnick, M. Blake; Thurow, Brian S.

2014-02-01

Simultaneous particle image velocimetry (PIV) and flow visualization measurements were performed in a turbulent boundary layer in an effort to better quantify the relationship between the velocity field and the image intensity typically observed in a classical flow visualization experiment. The freestream flow was lightly seeded with smoke particles to facilitate PIV measurements, whereas the boundary layer was densely seeded with smoke through an upstream slit in the wall to facilitate both PIV and classical flow visualization measurements at Reynolds numbers, Re θ , ranging from 2,100 to 8,600. Measurements were taken with and without the slit covered as well as with and without smoke injection. The addition of a narrow slit in the wall produces a minor modification of the nominal turbulent boundary layer profile whose effect is reduced with downstream distance. The presence of dense smoke in the boundary layer had a minimal effect on the observed velocity field and the associated proper orthogonal decomposition (POD) modes. Analysis of instantaneous images shows that the edge of the turbulent boundary layer identified from flow visualization images generally matches the edge of the boundary layer determined from velocity and vorticity. The correlation between velocity deficit and smoke intensity was determined to be positive and relatively large (>0.7) indicating a moderate-to-strong relationship between the two. This notion was extended further through the use of a direct correlation approach and a complementary POD/linear stochastic estimation (LSE) approach to estimate the velocity field directly from flow visualization images. This exercise showed that, in many cases, velocity fields estimated from smoke intensity were similar to the actual velocity fields. The complementary POD/LSE approach proved better for these estimations, but not enough to suggest using this technique to approximate velocity measurements from a smoke intensity image. Instead, the

Functional Analysis and Marker Development of TaCRT-D Gene in Common Wheat (Triticum aestivum L.).

PubMed

Wang, Jiping; Li, Runzhi; Mao, Xinguo; Jing, Ruilian

2017-01-01

Calreticulin (CRT), an endoplasmic reticulum (ER)-localized Ca 2+ -binding/buffering protein, is highly conserved and extensively expressed in animal and plant cells. To understand the function of CRTs in wheat ( Triticum aestivum L.), particularly their roles in stress tolerance, we cloned the full-length genomic sequence of the TaCRT-D isoform from D genome of common hexaploid wheat, and characterized its function by transgenic Arabidopsis system. TaCRT-D exhibited different expression patterns in wheat seedling under different abiotic stresses. Transgenic Arabidopsis plants overexpressing ORF of TaCRT-D displayed more tolerance to drought, cold, salt, mannitol, and other abiotic stresses at both seed germination and seedling stages, compared with the wild-type controls. Furthermore, DNA polymorphism analysis and gene mapping were employed to develop the functional markers of this gene for marker-assistant selection in wheat breeding program. One SNP, S440 (T→C) was detected at the TaCRT-D locus by genotyping a wheat recombinant inbred line (RIL) population (114 lines) developed from Opata 85 × W7984. The TaCRT-D was then fine mapped between markers Xgwm645 and Xgwm664 on chromosome 3DL, corresponding to genetic distances of 3.5 and 4.4 cM, respectively, using the RIL population and Chinese Spring nulli-tetrasomic lines. Finally, the genome-specific and allele-specific markers were developed for the TaCRT-D gene. These findings indicate that TaCRT-D function importantly in plant stress responses, providing a gene target for genetic engineering to increase plant stress tolerance and the functional markers of TaCRT-D for marker-assistant selection in wheat breeding.

Functional Analysis and Marker Development of TaCRT-D Gene in Common Wheat (Triticum aestivum L.)

PubMed Central

Wang, Jiping; Li, Runzhi; Mao, Xinguo; Jing, Ruilian

2017-01-01

Calreticulin (CRT), an endoplasmic reticulum (ER)-localized Ca2+-binding/buffering protein, is highly conserved and extensively expressed in animal and plant cells. To understand the function of CRTs in wheat (Triticum aestivum L.), particularly their roles in stress tolerance, we cloned the full-length genomic sequence of the TaCRT-D isoform from D genome of common hexaploid wheat, and characterized its function by transgenic Arabidopsis system. TaCRT-D exhibited different expression patterns in wheat seedling under different abiotic stresses. Transgenic Arabidopsis plants overexpressing ORF of TaCRT-D displayed more tolerance to drought, cold, salt, mannitol, and other abiotic stresses at both seed germination and seedling stages, compared with the wild-type controls. Furthermore, DNA polymorphism analysis and gene mapping were employed to develop the functional markers of this gene for marker-assistant selection in wheat breeding program. One SNP, S440 (T→C) was detected at the TaCRT-D locus by genotyping a wheat recombinant inbred line (RIL) population (114 lines) developed from Opata 85 × W7984. The TaCRT-D was then fine mapped between markers Xgwm645 and Xgwm664 on chromosome 3DL, corresponding to genetic distances of 3.5 and 4.4 cM, respectively, using the RIL population and Chinese Spring nulli-tetrasomic lines. Finally, the genome-specific and allele-specific markers were developed for the TaCRT-D gene. These findings indicate that TaCRT-D function importantly in plant stress responses, providing a gene target for genetic engineering to increase plant stress tolerance and the functional markers of TaCRT-D for marker-assistant selection in wheat breeding. PMID:28955354

75 FR 43556 - TA-W-73,381, MT Rail Link, Inc., Missoula, MT; TA-W-73,381A, Billings, MT; TA-W-73,381B, Laurel...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-26

... DEPARTMENT OF LABOR Employment and Training Administration TA-W-73,381, MT Rail Link, Inc., Missoula, MT; TA-W-73,381A, Billings, MT; TA-W-73,381B, Laurel, MT; TA-W-73,381C, Livingston, MT; TA-W-73... Helena, Montana. The amended notice applicable to TA-W-73,381 is hereby issued as follows: All workers of...

Laser Spectroscopy and AB Initio Calculations on the TaF Molecule

NASA Astrophysics Data System (ADS)

Ng, Kiu Fung; Zou, Wenli; Liu, Wenjian; Cheung, Allan S. C.

2016-06-01

Electronic transition spectrum of the tantalum monoflouride (TaF) molecule in the spectral region between 448 and 520 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Sixteen vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into six electronic transition systems and the ground state has been identified to be the X3Σ-(0+) state with bond length, ro, and equilibrium vibrational frequency, ωe, determined to be 1.8209 Å and 700.1 wn respectively. In addition, four vibrational bands belong to another transition system involving lower state with Ω = 2 component has also been analyzed. All observed transitions are with ΔΩ = 0. Least-squares fit of the measured line positions yielded molecular constants for the electronic states involved. The Λ-S and Ω states of TaF were calculated at the state-averaged complete active space self-consistent field (SA-CASSCF) and the subsequent internally contracted multi-reference configuration interaction with singles and doubles and Davidson's cluster correction (MRCISD+Q) levels of theory with the active space of 4 electrons in 6 orbitals, that is, the molecular orbitals corresponding to Ta 5d6s are active. The spin-orbit coupling (SOC) is calculated by the state-interaction approach at the SA-CASSCF level via the relativistic effective core potentials (RECPs) spin-orbit operator, where the diagonal elements of the spin-orbit matrix are replaced by the above MRCISD+Q energies. The spectroscopic properties of the ground and many low-lying electronic states of the TaF molecule will be reported. With respect to the observed electronic states in this work, the calculated results are in good agreement with our experimental determinations. This work represents the first experimental

The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys

NASA Astrophysics Data System (ADS)

O'Brien, Brendan B.

Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines. Understanding microstructural transformation of the ECD Cu in narrow features which leads to this polygranular microstructure is the first focus of this dissertation. As in the case of Cu films, the underlying seed layer strongly influences progress of transformation. Unlike films, however, the seed layer is not homogenous in patterned substrates, but differs according to the size of the trench and the location within the trench (field, bottom, and sidewall). Based on these findings, and the known influence of texture on the transformation of ECD Cu, a rapid trench initiated transformation process was posited for narrow interconnect lines. Time-resolved TEM observation of the ECD Cu in 48 nm lines during the transformation process confirmed the hypothesis. In fact, the TEM images revealed that the transformation was even faster than anticipated, and that the microstructure of the Cu inside the lines was stagnant after a mere 1.5 hours at room temperature. Studies of the transformation at elevated temperatures found that, despite anneals at 250°C for up to an hour, the grain size distribution for the Cu in narrow lines for all times converged, whether annealed at room temperature or 250°C. These data suggest that process was being driven by the 'consumable' internal energy stored in the as-plated microstructure. This is different than the transformation of the overburden, which is driven by a competition between surface energy and internal stress buildup due to film densification and relief due to the secondary growth of a 200 texture component. Based on these findings

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Oxidation of ZrB2 SiC TaSi2 Materials at Ultra High Temperatures

NASA Technical Reports Server (NTRS)

Opila, E.; Smith, J.; Levine, S.; Lorincz, J.; Reigel, M.

2008-01-01

ZrB2 - 20v% SiC - 20v% TaSi2 was oxidized in stagnant air for ten minute cycles for times up to 100 minutes at 1627 C and 1927 C. The sample oxidized at 1627 C showed oxidation resistance better than that of the standard ZrB2 - 20v% SiC. The sample oxidized at 1927 C, however, showed evidence of liquid phase formation and complex oxidation products. The sample exposed at 1927 C was analyzed in detail by scanning electron microprobe and wavelength dispersive spectroscopy to understand the complex oxidation and melting reactions occurring during exposure. The as hot-pressed material shows the formation of a Zr(Ta)B2 phase in addition to the three phases in the nominal composition already noted. After oxidation, the TaSi2 in the matrix was completely reacted to form Ta(Zr)C. The layered oxidation products included SiO2, ZrO2, Ta2O5, and a complex oxide containing both Zr and Ta. Likely reactions are proposed based on thermodynamic phase stability and phase morphology.

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Iandolo, Donata; Willander, Magnus

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealedmore » by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (∼575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.« less

Flux-mediated syntheses, structural characterization and low-temperature polymorphism of the p-type semiconductor Cu2Ta4O11

NASA Astrophysics Data System (ADS)

King, Nacole; Sullivan, Ian; Watkins-Curry, Pilanda; Chan, Julia Y.; Maggard, Paul A.

2016-04-01

A new low-temperature polymorph of the copper(I)-tantalate, α-Cu2Ta4O11, has been synthesized in a molten CuCl-flux reaction at 665 °C for 1 h and characterized by powder X-ray diffraction Rietveld refinements (space group Cc (#9), a=10.734(1) Å, b = 6.2506(3) Å, c=12.887(1) Å, β = 106.070(4)°). The α-Cu2Ta4O11 phase is a lower-symmetry monoclinic polymorph of the rhombohedral Cu2Ta4O11 structure (i.e., β-Cu2Ta4O11 space group R 3 ̅ c (#167), a = 6.2190(2) Å, c=37.107(1) Å), and related crystallographically by ahex=amono/√3, bhex=bmono, and chex=3cmonosinβmono. Its structure is similar to the rhombohedral β-Cu2Ta4O11 and is composed of single layers of highly-distorted and edge-shared TaO7 and TaO6 polyhedra alternating with layers of nearly linearly-coordinated Cu(I) cations and isolated TaO6 octahedra. Temperature dependent powder X-ray diffraction data show the α-Cu2Ta4O11 phase is relatively stable under vacuum at 223 K and 298 K, but reversibly transforms to β-Cu2Ta4O11 by at least 523 K and higher temperatures. The symmetry-lowering distortions from β-Cu2Ta4O11 to α-Cu2Ta4O11 arise from the out-of-center displacements of the Ta 5d0 cations in the TaO7 pentagonal bipyramids. The UV-vis diffuse reflectance spectrum of the monoclinic α-Cu2Ta4O11 shows an indirect bandgap transition of ∼2.6 eV, with the higher-energy direct transitions starting at ∼2.7 eV. Photoelectrochemical measurements on polycrystalline films of α-Cu2Ta4O11 show strong cathodic photocurrents of ∼1.5 mA/cm2 under AM 1.5 G solar irradiation.

Incidence of seed-borne fungi and aflatoxins in Sudanese lentil seeds.

PubMed

el-Nagerabi, S A; Elshafie, A E

2001-01-01

Thirteen seed samples of lentil (Lens esculenta) were incubated on agar plate and moist filter papers (Moist Chambers) at 28 +/- 2 degrees C for determination of the incidence of seed-borne fungi. Aflatoxins content of the seeds was measured using the bright greenish- yellow fluorescence test (BGYF) and thin-layer chromatography (TLC). Sixty-nine species and seven varieties, which belong to 24 genera of fungi, were isolated from this crop. Of these fungi, 51 species and two varieties are considered new for this crop, whereas seven genera and 13 species are new to the mycoflora of the Sudan. The genus Aspergillus (13 species and 6 varieties) which comprising 44% of the total colony count was the most prevalent genus followed by Rhizopus (2 species, 19%), Penicillium (6 species) and Fusarium (8 species) (12%), Chaetomium (3 species) and Cladosporium (5 species) (6%), where the 18 genera (1-4 species) showed very low level of incidence (19%). Of the possible pathogens of lentil plants, F. oxysporum the main cause of vascular wilt was recovered from seeds of this crop. Thin layer chromatographic analysis of chloroform extracts of 13 seed samples showed that only one samples was naturally contaminated with aflatoxins B1, B2, G1 and G2 (14.3 micrograms/kg).

High-pressure phases of Weyl semimetals NbP, NbAs, TaP, and TaAs

NASA Astrophysics Data System (ADS)

Guo, ZhaoPeng; Lu, PengChao; Chen, Tong; Wu, JueFei; Sun, Jian; Xing, DingYu

2018-03-01

In this study, we used the crystal structure search method and first-principles calculations to systematically explore the highpressure phase diagrams of the TaAs family (NbP, NbAs, TaP, and TaAs). Our calculation results show that NbAs and TaAs have similar phase diagrams, the same structural phase transition sequence I41 md→ P6¯ m2→ P21/ c→ Pm3¯ m, and slightly different transition pressures. The phase transition sequence of NbP and TaP differs somewhat from that of NbAs and TaAs, in which new structures emerge, such as the Cmcm structure in NbP and the Pmmn structure in TaP. Interestingly, we found that in the electronic structure of the high-pressure phase P6¯ m2-NbAs, there are coexistingWeyl points and triple degenerate points, similar to those found in high-pressure P6¯ m2-TaAs.

[Dynamics of Quercus variabilis seed rain and soil seed bank in different habitats on the north slope of Qinling Mountains].

PubMed

Wu, Min; Zhang, Wen-Hui; Zhou, Jian-Yun; Ma, Chuang; Ma, Li-Wei

2011-11-01

In order to explore the dynamics of Quercus variabilis seed rain and soil seed bank in different habitats on the north slope of Qinling Mountains, three kinds of micro-habitats (understory, forest gap, and forest edge) were selected, with the seed rain quantity and quality of Q. variabilis, seed amount and viability in soil seed bank, as well as the seedling development of Q. variabilis studied. The seed rain of Q. variabilis started from mid August, reached the peak in mid September-early October, and ended at the beginning of November, and there existed differences in the dissemination process, occurrence time, and composition of the seed rain among the three micro-habitats. The seed rain had the maximum intensity (39.55 +/- 5.56 seeds x m(-2)) in understory, the seeds had the earliest landing time, the longest lasting duration, and the highest viability in forest gap, and the mature seeds had the largest proportion in forest edge, accounting for 58.7% of the total. From the ending time of seed rain to next August, the total reserve of soil seed bank was the largest in understory and the smallest in forest edge. In the three habitats, the amount of mature and immature seeds, that of seeds eaten by animals, and the seed viability in soil seed bank all decreased with time. In contrast, the number of moldy seeds increased. The seeds were mainly concentrated in litter layer, a few of them were in 0-2 cm soil layer, and few were in 2-5 cm soil layer. The density of the seedlings varied with habitats, being the largest in forest gap, followed by in forest edge, and the least in understory, which suggested that forest gap was more suitable for the seed germination and seedling growth of Q. variabilis, and thus, appropriate thinning should be taken to increase forest gap to provide favorable conditions for the natural regeneration of Q. variabilis forest.

Overexpression of TaNAC2D Displays Opposite Responses to Abiotic Stresses between Seedling and Mature Stage of Transgenic Arabidopsis

PubMed Central

Huang, Quanjun; Wang, Yan

2016-01-01

Environmental stresses frequently affect plant growth and development, and many genes have been found to be induced by unfavorable environmental conditions. Here, we reported the biological functions of TaNAC2D, a stress-related NAC (NAM, ATAF, and CUC) gene from wheat. TaNAC2D showed transcriptional activator activity in yeast. TaNAC2D-GFP fusion protein was localized in the nucleus of wheat mesophyll protoplasts. TaNAC2D transcript abundance was significantly induced by NaCl, PEG6000, and abscisic acid (ABA) at seedling stage, and repressed by NaCl and PEG6000 at mature plant stage. When TaNAC2D was introduced into Arabidopsis, the 35-day-old soil-grown TaNAC2D-overexpression (TaNAC2D-OX) plants displayed slower stomatal closure, higher water loss rate, and more sensitivity to salt and drought stresses compared with WT plants. In contrast, TaNAC2D-OX seedlings, grown on 1/2 MS medium supplemented with different concentrations of NaCl, Mannitol, and MV, had enhanced tolerances to salt, osmotic and oxidative stresses during seed germination and post-germination periods. The opposite stress-responsive phenotypes of transgenic Arabidopsis were consistent with the expression patterns of TaNAC2D in wheat. Moreover, under high salinity and dehydration conditions, three marker genes, including NCED3, RD29A, and RD29B, were down-regulated in 35-day-old TaNAC2D-OX plants grown in soil and up-regulated in 14-day-old TaNAC2D-OX seedlings grown on 1/2 MS medium. Our results suggest that the change in growth stages and environmental conditions may regulate TaNAC2D’s function. PMID:27933076

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

NASA Astrophysics Data System (ADS)

Wang, I.-Ting; Chang, Chih-Cheng; Chiu, Li-Wen; Chou, Teyuh; Hou, Tuo-Hung

2016-09-01

The implementation of highly anticipated hardware neural networks (HNNs) hinges largely on the successful development of a low-power, high-density, and reliable analog electronic synaptic array. In this study, we demonstrate a two-layer Ta/TaO x /TiO2/Ti cross-point synaptic array that emulates the high-density three-dimensional network architecture of human brains. Excellent uniformity and reproducibility among intralayer and interlayer cells were realized. Moreover, at least 50 analog synaptic weight states could be precisely controlled with minimal drifting during a cycling endurance test of 5000 training pulses at an operating voltage of 3 V. We also propose a new state-independent bipolar-pulse-training scheme to improve the linearity of weight updates. The improved linearity considerably enhances the fault tolerance of HNNs, thus improving the training accuracy.

78 FR 28627 - TA-W-80,340; TA-W-80,340A; TA-W-80,340B

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-15

...] Bush Industries, Inc., Mason Drive Facility, Including On-Site Leased Workers From Morris Security...., Mason Drive Facility, Jamestown, New York (TA-W-80,340) and Bush Industries, Inc., Allen Street Facility... applicable to TA-W-80,340 is hereby issued as follows: All workers of Bush Industries, Inc., Mason Drive...

Methodological bias in the seed bank flora holds significant implications for understanding seed bank community functions.

PubMed

Plue, J; Colas, F; Auffret, A G; Cousins, S A O

2017-03-01

Persistent seed banks are a key plant regeneration strategy, buffering environmental variation to allow population and species persistence. Understanding seed bank functioning within herb layer dynamics is therefore important. However, rather than assessing emergence from the seed bank in herb layer gaps, most studies evaluate the seed bank functioning via a greenhouse census. We hypothesise that greenhouse data may not reflect seed bank-driven emergence in disturbance gaps due to methodological differences. Failure in detecting (specialist) species may then introduce methodological bias into the ecological interpretation of seed bank functions using greenhouse data. The persistent seed bank was surveyed in 40 semi-natural grassland plots across a fragmented landscape, quantifying seedling emergence in both the greenhouse and in disturbance gaps. Given the suspected interpretational bias, we tested whether each census uncovers similar seed bank responses to fragmentation. Seed bank characteristics were similar between censuses. Census type affected seed bank composition, with >25% of species retrieved better by either census type, dependent on functional traits including seed longevity, production and size. Habitat specialists emerged more in disturbance gaps than in the greenhouse, while the opposite was true for ruderal species. Both censuses uncovered fragmentation-induced seed bank patterns. Low surface area sampling, larger depth of sampling and germination conditions cause underrepresentation of the habitat-specialised part of the persistent seed bank flora during greenhouse censuses. Methodological bias introduced in the recorded seed bank data may consequently have significant implications for the ecological interpretation of seed bank community functions based on greenhouse data. © 2016 German Botanical Society and The Royal Botanical Society of the Netherlands.

The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves

NASA Astrophysics Data System (ADS)

Qiu, J. J.; Han, G. C.; Li, K. B.; Liu, Z. Y.; Zong, B. Y.; Wu, Y. H.

2006-05-01

The magnetostriction coefficient (λs) of ultrathin sputtered polycrystalline as-deposited and annealed Ta/Ni81Fe19(t)/Ta films was studied as a function of the thickness. λs and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90Fe10, and CoFe/NiFe/CoFe layers as free layer (FL), respectively. λs of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on λs of CoFe FL. All λs of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFeOx related NOL added below. Our λs and surface roughness results indicated that the structure of the film not the roughness dominates λs of ultrathin FL in SVs.

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE PAGES

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

2016-11-18

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Drought-Up-Regulated TaNAC69-1 is a Transcriptional Repressor of TaSHY2 and TaIAA7, and Enhances Root Length and Biomass in Wheat.

PubMed

Chen, Dandan; Richardson, Terese; Chai, Shoucheng; Lynne McIntyre, C; Rae, Anne L; Xue, Gang-Ping

2016-10-01

A well-known physiological adaptation process of plants encountering drying soil is to achieve water balance by reducing shoot growth and maintaining or promoting root elongation, but little is known about the molecular basis of this process. This study investigated the role of a drought-up-regulated Triticum aestivum NAC69-1 (TaNAC69-1) in the modulation of root growth in wheat. TaNAC69-1 was predominantly expressed in wheat roots at the early vegetative stage. Overexpression of TaNAC69-1 in wheat roots using OsRSP3 (essentially root-specific) and OsPIP2;3 (root-predominant) promoters resulted in enhanced primary seminal root length and a marked increase in maturity root biomass. Competitive growth analysis under water-limited conditions showed that OsRSP3 promoter-driven TaNAC69-1 transgenic lines produced 32% and 35% more above-ground biomass and grains than wild-type plants, respectively. TaNAC69-1 overexpression in the roots down-regulated the expression of TaSHY2 and TaIAA7, which are from the auxin/IAA (Aux/IAA) transcriptional repressor gene family and are the homologs of negative root growth regulators SHY2/IAA3 and IAA7 in Arabidopsis. The expression of TaSHY2 and TaIAA7 in roots was down-regulated by drought stress and up-regulated by cytokinin treatment, which inhibited root growth. DNA binding and transient expression analyses revealed that TaNAC69-1 bound to the promoters of TaSHY2 and TaIAA7, acted as a transcriptional repressor and repressed the expression of reporter genes driven by the TaSHY2 or TaIAA7 promoter. These data suggest that TaNAC69-1 is a transcriptional repressor of TaSHY2 and TaIAA7 homologous to Arabidopsis negative root growth regulators and is likely to be involved in promoting root elongation in drying soil. © The Author 2016. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Pressure-induced ferroelectric to paraelectric transition in LiTaO 3 and (Li,Mg)TaO 3

DOE PAGES

Yamanaka, Takamitsu; Nakamoto, Yuki; Takei, Fumihiko; ...

2016-02-16

X-ray powder diffraction and Raman scattering of LiTaO 3 (LT) and (Li,Mg)TaO 3 (LMT) have been measured under pressure up to 46 GPa. Above 30 GPa, the ferroelectric rhombohedral phase (R3c, Z – 6) of LiTaO 3 transforms to a paraelectric orthorhombic phase (Pnma with Z – 4) with a large hysteresis. Rietveld profile fitting analysis shows that the Li-O bond is compressed and approaches that of Ta-O with pressure. The cation distribution analysis of the orthorhombic perovskite structure shows that Li and Ta are located in the octahedral 8-fold coordination sites. Difference Fourier |F obs(hkl)| - |F cal(hkl)| mapsmore » of LiTaO 3 and (Li,Mg)TaO 3 indicate polarization in the c axis direction and a more distinct electron density distribution around the Ta position for (Li,Mg)TaO 3 compared to LiTaO 3. The observed effective charges indicate that for (Li,Mg)TaO 3 without vacancies Ta 5+ becomes less ionized as a function of Mg substitution. Considering both site occupancy and effective charge analysis, Ta 5+ is reduced to Ta 4.13+. Mg 2+ and O 2- change to Mg 1.643+ and O 1.732 -, respectively. The space- and time-averaged structures of the dynamical vibration of atoms can be elucidated from the electron density analysis by difference Fourier and temperature factors T(hkl) in the structure refinement. The refinement of the temperature factor is consistent with the cation distribution assuming full stoichiometry. The residual electron density induced from the excess electron in (Li,Mg)TaO 3 indicates more electrons around the Ta site, as confirmed by the effective charge analysis. Raman spectra of LiTaO 3 and (Li,Mg)TaO 3 show notable changes over the measured pressure range. Raman peaks centered at 250 cm –1 and 350 cm –1 at ambient pressure merge above 8 GPa, which we associate with the diminishing of difference in distances between Li-O and Ta-O bonds with pressure in both materials. Finally, Raman spectra show significant changes at 28 GPa and 33 GPa for

A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

NASA Astrophysics Data System (ADS)

Takaloo, Ashkan Vakilipour; Joo, Seung Ki; Es, Firat; Turan, Rasit; Lee, Doo Won

2018-03-01

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 mΩ.cm2 was obtained.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

PubMed

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-08-19

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

PubMed Central

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-01-01

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role. PMID:28811454

Developmental patterning of sub-epidermal cells in the outer integument of Arabidopsis seeds

PubMed Central

Fiume, Elisa; Coen, Olivier; Xu, Wenjia; Lepiniec, Loïc

2017-01-01

The seed, the reproductive unit of angiosperms, is generally protected by the seed coat. The seed coat is made of one or two integuments, each comprising two epidermal cells layers and, in some cases, extra sub-epidermal cell layers. The thickness of the seed-coat affects several aspects of seed biology such as dormancy, germination and mortality. In Arabidopsis, the inner integument displays one or two sub-epidermal cell layers that originate from periclinal cell divisions of the innermost epidermal cell layer. By contrast, the outer integument was considered to be two-cell layered. Here, we show that sub-epidermal chalazal cells grow in between the epidermal outer integument cell layers to create an incomplete three-cell layered outer integument. We found that the MADS box transcription factor TRANSPARENT TESTA 16 represses growth of the chalaza and formation of sub-epidermal outer integument cells. Finally, we demonstrate that sub-epidermal cells of the outer and inner integument respond differently to the repressive mechanism mediated by FERTILIZATION INDEPENDENT SEED Polycomb group proteins and to fertilization signals. Our data suggest that integument cell origin rather than sub-epidermal cell position underlies different responses to fertilization. PMID:29141031

A CBL-Interacting Protein Kinase TaCIPK2 Confers Drought Tolerance in Transgenic Tobacco Plants through Regulating the Stomatal Movement.

PubMed

Wang, Yan; Sun, Tao; Li, Tingting; Wang, Meng; Yang, Guangxiao; He, Guangyuan

2016-01-01

In plants, the CBL-CIPK signaling pathways play key roles in the response to abiotic stresses. However, functional studies of CIPKs in the important staple crop wheat are very rare. In this study, we identified a CIPK gene from wheat, designated TaCIPK2. Expression analysis results showed that TaCIPK2 could be up-regulated in wheat leaves by polyethylene glycol, abscisic acid and H2O2 treatments. Subcellular localization analyses revealed that TaCIPK2 was present in whole wheat epidermal cells. A yeast two-hybrid assay indicated that TaCIPK2 interacted with TaCBL1, 2, 3 and 4 in vitro. Transgenic tobacco plants over-expressing TaCIPK2 exhibited increased drought tolerance, indicated by a larger proportion of green cotyledons and higher survival rates under the osmotic and drought stress conditions compared with control plants. Additionally, physiological index analyses revealed that the transgenic tobacco plants had lower water loss rates and ion leakage, accumulated less malondialdehyde and H2O2, and had higher catalase and superoxide dismutase activities than the control plants. The transgenic plants also exhibited faster stomatal closure following exposure to osmotic stress conditions. The seed germination rates and stomatal aperture of TaCIPK2-overexpressing tobacco plants decreased after exogenous abscisic acid treatment was applied, implying that the transgenic tobacco plants were more sensitive to exogenous abscisic acid than the control plants. Our results indicate that TaCIPK2 plays a positive regulatory role in drought stress responses in transgenic tobacco plants.

Plasma treatment of Seeds: effect on growth, spores and bacterial charge

NASA Astrophysics Data System (ADS)

Ambrico, P. F.; Simek, M.; Morano, M.; Ambrico, M.; Minafra, A.; Prukner, V.; de Miccolis Angelini, R. M.; Trotti, P.

2016-09-01

We report on the effect of low temperature plasma treatment on tomato, basil and tobacco commercial seeds. Seeds were treated in filtered ambient air volume, surface and plasma jet DBD at atmospheric pressure Sterile agar substrate, supplemented with a nutrient and vitamin mixture, was used to allow seeds germination in sterilized sealed plastic containers. The seeds were stored in controlled environmental condition (T = 26C, cycle of 14hrs light/10hrs dark condition). Since all the procedure was performed under sterile conditions, only bacteria and fungi carried by seeds could grow. Plasma treatment significantly reduced the presence of bacterial contamination, while some fungi could resist at shortest exposures Seeds germination was then followed by time lapse photography in sterile water on 3MM Whatman paper in a closed container. The effect of plasma treatment was a faster germination time of seeds and emergence of cotyledons, able to start photosynthesis in seedlings.The plasma treated seeds were also sow in a soil/peat moss mixture. Plants were cultivated for about 40 days, showing that plasma induced a faster growth in length and weight with respect to untreated seeds.Furthermore the effect of plasma on seeds surface was studied by SEM imaging. We acknowledge `SELGE' (Puglia) and TACR (TA03010098).

Processing and characterization of zeta-Ta4C 3-x: A high toughness tantalum carbide

NASA Astrophysics Data System (ADS)

Sygnatowicz, Michael M.

Tantalum carbides are commonly processed by hot-pressing, canned hot-isostatic-pressing, or spark-plasma sintering because of their high melting temperatures and low diffusivities. This study reports processing of dense ζ-Ta4C 3-x by reaction sintering of a Ta and TaC powder mixture (C/Ta atomic ratio = 0.66). ζ-Ta4C3-x is of interest due to its rhombohedral (trigonal) crystal structure that may be characterized as a polytype with both face-centered-cubic (fcc) and hexagonal-close-packed (hcp) Ta stacking sequences interrupted by stacking faults and missing carbon layers. This structure leads to easy cleaving on the basal planes and high fracture toughness. A key step in processing is the hydrogenation of the Ta powder to produce beta-TaH x, a hard and brittle phase that enables efficient comminution during milling and production of small, equiaxed Ta particles that can be packed to high green density with the TaC powder. Studies of phase evolution by quantitative X-ray diffraction during sintering revealed several intermediate reactions: (a) decomposition of beta-TaHx to Ta, (b) diffusion of C from gamma-TaC to Ta leading to the formation of α-Ta2Cy' with the kinetics described by the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation with an exponent, n = 0.5, and an activation energy of 221 kJ/mole, (c) equilibration of α-Ta2Cy' and gamma-TaC 0.78 phases, and (d) formation of ζ-Ta4C2.56 from the equilibrated α-Ta2C and gamma-TaC0.78 phases with the kinetics characterized by a higher JMAK exponent ( n ≈ 3) and higher activation energy (1089 kJ/mole). The microstructure showed evidence of nucleation and growth of the ζ-Ta4C 2.56 phase in both the α-Ta2C and gamma-TaC0.78 parent phases with distinct difference in the morphology due to the different number of variants of the habit plane. A hot-pressed and hot-isostatic-pressed (HIPed) material (C/Ta atomic ratio = 0.66), having formed 95 w% ζ-phase, attained a fracture toughness of 15.6 +/- 0.5 MPa√m and a

Electrodeposition of Al-Ta alloys in NaCl-KCl-AlCl3 molten salt containing TaCl5

NASA Astrophysics Data System (ADS)

Sato, Kazuki; Matsushima, Hisayoshi; Ueda, Mikito

2016-12-01

To form Al-Ta alloys for high temperature oxidation resistance components, molten salt electrolysis was carried out in an AlCl3-NaCl-KCl melt containing TaCl5 at 423 K. The voltammogram showed two cathodic waves at 0.45 V and 0.7 V vs. Al/Al(III), which may correspond to reduction from Ta(V) to Ta(III) and from Ta(III) to tantalum metal, respectively. Electrodeposits of Al and Ta were obtained in the range from -0.05 to 0.3 V and the highest concentration of Ta in the electrodeposit was 72 at% at 0.3 V. With increasing Ta content in the alloy, the morphology of the electrodeposits became powdery and the particle size smaller.

EUSO-TA prototype telescope

NASA Astrophysics Data System (ADS)

Bisconti, Francesca; JEM-EUSO Collaboration

2016-07-01

EUSO-TA is one of the prototypes developed for the JEM-EUSO project, a space-based large field-of-view telescope to observe the fluorescence light emitted by cosmic ray air showers in the atmosphere. EUSO-TA is a ground-based prototype located at the Telescope Array (TA) site in Utah, USA, where an Electron Light Source and a Central Laser Facility are installed. The purpose of the EUSO-TA project is to calibrate the prototype with the TA fluorescence detector in presence of well-known light sources and cosmic ray air showers. In 2015, the detector started the first measurements and tests using the mentioned light sources have been performed successfully. A first cosmic ray candidate has been observed, as well as stars of different magnitude and color index. Since Silicon Photo-Multipliers (SiPMs) are very promising for fluorescence telescopes of next generation, they are under consideration for the realization of a new prototype of EUSO Photo Detector Module (PDM). The response of this sensor type is under investigation through simulations and laboratory experimentation.

Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge

NASA Astrophysics Data System (ADS)

Yan, YiChao; Shi, Wei; Jiang, HongChuan; Cai, XianYao; Deng, XinWu; Xiong, Jie; Zhang, WanLi

2015-05-01

The energetic igniters through integrating B/Ti nano-multilayers on tantalum nitride (TaN) ignition bridge are designed and fabricated. The X-ray diffraction (XRD) and temperature coefficient of resistance (TCR) results show that nitrogen content has a great influence on the crystalline structure and TCR. TaN films under nitrogen ratio of 0.99 % exhibit a near-zero TCR value of approximately 10 ppm/°C. The scanning electron microscopy demonstrates that the layered structure of the B/Ti multilayer films is clearly visible with sharp and smooth interfaces. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45 V reveal an excellent explosion performance by (B/Ti) n /TaN integration film bridge with small ignition delay time, high explosion temperature, much more bright flash of light, and much large quantities of the ejected product particles than TaN film bridge.

Effects of surface morphology of ZnO seed layers on growth of ZnO nanostructures prepared by hydrothermal method and annealing.

PubMed

Yim, Kwang Gug; Kim, Min Su; Leem, Jae-Young

2013-05-01

ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees C for 20 min under an Ar atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out at room temperature (RT) to investigate the structural and optical properties of the as-grown and annealed ZnO nanostructures. The surface morphologies of the seed layers changed from a smooth surface to a mountain chain-like structure as the post-heating temperatures increased. The as-grown and annealed ZnO nanostructures exhibited a strong (002) diffraction peak. Compared to the as-grown ZnO nanostructures, the annealed ZnO nanostructures exhibited significantly strong enhancement in the PL intensity ratio by almost a factor of 2.

Structure and Microhardness of Cu-Ta Joints Produced by Explosive Welding

PubMed Central

Maliutina, Iu. N.; Mali, V. I.; Bataev, I. A.; Bataev, A. A.; Esikov, M. A.; Smirnov, A. I.; Skorokhod, K. A.

2013-01-01

The structure and microhardness of Cu-Ta joints produced by explosive welding were studied. It was found that, during explosive welding, an intermediate layer 20⋯40 μm thick with a finely dispersed heterophase structure, formed between the welded copper and tantalum plates. The structure of the layer was studied by scanning and transmission electron microscopy. Microvolumes with tantalum particles distributed in a copper matrix and microvolumes of copper particles in a tantalum matrix were detected. The tantalum particles in copper have a size of 5⋯500 nm, with a predominance of 5⋯50 nm particles. A mechanism for the formation of the finely dispersed heterophase structure in explosive welding is proposed. The microhardness of interlayers with the heterophase structure reaches 280 HV, which far exceeds the microhardness of copper (~130 HV) and tantalum (~160 HV). Many twins of deformation origin were found in the structure of the copper plate. The effect of heating temperature in the range from 100 to 900°C on the microhardness of copper, tantalum, and the Cu-Ta welded joint was studied. Upon heating to 900°C, the microhardness of the intermediate layer decreases from 280 to 150 HV. The reduction in the strength properties of the weld material is mainly due to structural transformations in copper. PMID:24453818

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM

NASA Astrophysics Data System (ADS)

Sharath, S. U.; Joseph, M. J.; Vogel, S.; Hildebrandt, E.; Komissinskiy, P.; Kurian, J.; Schroeder, T.; Alff, L.

2016-10-01

We have investigated the material and electrical properties of tantalum oxide thin films (TaOx) with engineered oxygen contents grown by RF-plasma assisted molecular beam epitaxy. The optical bandgap and the density of the TaOx films change consistently with oxygen contents in the range of 3.63 to 4.66 eV and 12.4 to 9.0 g/cm3, respectively. When exposed to atmosphere, an oxidized Ta2O5-y surface layer forms with a maximal thickness of 1.2 nm depending on the initial oxygen deficiency of the film. X-ray photoelectron spectroscopy studies show that multiple sub-stoichiometric compositions occur in oxygen deficient TaOx thin films, where all valence states of Ta including metallic Ta are possible. Devices of the form Pt/Ta2O5-y/TaOx/TiN exhibit highly tunable forming voltages of 10.5 V to 1.5 V with decreasing oxygen contents in TaOx. While a stable bipolar resistive switching (BRS) occurs in all devices irrespective of oxygen content, unipolar switching was found to coexist with BRS only at higher oxygen contents, which transforms to a threshold switching behaviour in the devices grown under highest oxidation.

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

NASA Astrophysics Data System (ADS)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Nanostructured TaON/Ta3N5 as a highly efficient type-II heterojunction photoanode for photoelectrochemical water splitting.

PubMed

Pei, Lang; Wang, Hongxu; Wang, Xiaohui; Xu, Zhe; Yan, Shicheng; Zou, Zhigang

2018-06-20

Enhancing the charge separation by a semiconductor heterojunction is greatly promising and challenging for photoelectrochemical (PEC) water splitting. Here, we report for the first time the design and fabrication of a TaON/Ta3N5 heterojunction photoanode, in which the electrode Ta3N5 is the primary light absorber and TaON acts as an electron conductor. By combining the merits of the substantial light harvesting of Ta3N5 with the excellent charge transport capability of TaON, the TaON/Ta3N5 heterojunction photoanode, without any co-catalysts, shows a 350 mV negative shift of photocurrent onset potential to 0.65 V versus the reversible hydrogen electrode (RHE) compared to that of the Ta3N5 photoanode. The design and fabrication scheme can be readily extended to other (oxy)nitride semiconductors for heterojunction construction.

Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge.

PubMed

Yan, YiChao; Shi, Wei; Jiang, HongChuan; Cai, XianYao; Deng, XinWu; Xiong, Jie; Zhang, WanLi

2015-12-01

The energetic igniters through integrating B/Ti nano-multilayers on tantalum nitride (TaN) ignition bridge are designed and fabricated. The X-ray diffraction (XRD) and temperature coefficient of resistance (TCR) results show that nitrogen content has a great influence on the crystalline structure and TCR. TaN films under nitrogen ratio of 0.99 % exhibit a near-zero TCR value of approximately 10 ppm/°C. The scanning electron microscopy demonstrates that the layered structure of the B/Ti multilayer films is clearly visible with sharp and smooth interfaces. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45 V reveal an excellent explosion performance by (B/Ti) n /TaN integration film bridge with small ignition delay time, high explosion temperature, much more bright flash of light, and much large quantities of the ejected product particles than TaN film bridge.

Helium and deuterium irradiation effects in W-Ta composites produced by pulse plasma compaction

NASA Astrophysics Data System (ADS)

Dias, M.; Catarino, N.; Nunes, D.; Fortunato, E.; Nogueira, I.; Rosinki, M.; Correia, J. B.; Carvalho, P. A.; Alves, E.

2017-08-01

Tungsten-tantalum composites have been envisaged for first-wall components of nuclear fusion reactors; however, changes in their microstructure are expected from severe irradiation with helium and hydrogenic plasma species. In this study, composites were produced from ball milled W powder mixed with 10 at.% Ta fibers through consolidation by pulse plasma compaction. Implantation was carried out at room temperature with He+ (30 keV) or D+ (15 keV) or sequentially with He+ and D+ using ion beams with fluences of 5 × 1021 at/m2. Microstructural changes and deuterium retention in the implanted composites were investigated by scanning electron microscopy, coupled with focused ion beam and energy dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffraction, Rutherford backscattering spectrometry and nuclear reaction analysis. The composite materials consisted of Ta fibers dispersed in a nanostructured W matrix, with Ta2O5 layers at the interfacial regions. The Ta and Ta2O5 surfaces exhibited blisters after He+ implantation and subsequent D+ implantation worsened the blistering behavior of Ta2O5. Swelling was also pronounced in Ta2O5 where large blisters exhibited an internal nanometer-sized fuzz structure. Transmission electron microscopy revealed an extensive presence of dislocations in the metallic phases after the sequential implantation, while a relatively low density of defects was detected in Ta2O5. This behavior may be partially justified by a shielding effect from the blisters and fuzz structure developed progressively during implantation. The tungsten peaks in the X-ray diffractograms were markedly shifted after He+ implantation, and even more so after the sequential implantation, which is in agreement with the increased D retention inferred from nuclear reaction analysis.

Comparison of reproduce signal and noise of conventional and keepered CoCrTa/Cr thin film media

NASA Astrophysics Data System (ADS)

Sin, Kyusik; Ding, Juren; Glijer, Pawel; Sivertsen, John M.; Judy, Jack H.; Zhu, Jian-Gang

1994-05-01

We studied keepered high coercivity CoCrTa/Cr thin film media with a Cr isolation layer between the CoCrTa storage and an overcoating of an isotropic NiFe soft magnetic layer. The influence of the thickness of the NiFe and Cr layers, and the effects of head bias current on the signal output and noise, were studied using a thin film head. The reproduced signal increased by 7.3 dB, but the signal-to-noise ratio decreased by 4 dB at a linear density of 2100 fr/mm (53.3 kfr/in.) with a 1000 Å thick NiFe keeper layer. The medium noise increased with increasing NiFe thickness and the signal output decreased with decreasing Cr thickness. A low output signal obtained with very thin Cr may be due to magnetic interactions between the keeper layer and magnetic media layer. It is observed that signal distortion and timing asymmetry of the output signals depend on the thickness of the keeper layer and the head bias current. The signal distortion increased and the timing asymmetry decreased as the head bias current was increased. These results may be associated with different permeability of the keeper under the poles of the thin film head due to the superposition of head bias and bit fields.

Fluorescent vancomycin and terephthalate comodified europium-doped layered double hydroxides nanoparticles: synthesis and application for bacteria labelling

NASA Astrophysics Data System (ADS)

Sun, Jianchao; Fan, Hai; Wang, Nan; Ai, Shiyun

2014-09-01

Vancomycin (Van)- and terephthalate (TA)-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles were successfully prepared by a two-step method, in which, TA acted as a sensitizer to enhance the fluorescent property and Van was modified on the surface of LDH to act as an affinity reagent to bacteria. The obtained products were characterized by X-ray diffraction, transmission electron microscope and fluorescent spectroscopy. The results demonstrated that the prepared Van- and TA-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles with diameter of 50 nm in size showed highly efficient fluorescent property. Furthermore, due to the high affinity of Van to bacteria, the prepared Van-TA-Eu-LDHs nanoparticles showed efficient bacteria labelling by fluorescent property. The prepared nanoparticles may have wide applications in the biological fields, such as biomolecular labelling and cell imaging.

Low elastic modulus Ti-Ta alloys for load-bearing permanent implants: enhancing the biodegradation resistance by electrochemical surface engineering.

PubMed

Kesteven, Jazmin; Kannan, M Bobby; Walter, Rhys; Khakbaz, Hadis; Choe, Han-Choel

2015-01-01

In this study, the in vitro degradation behaviour of titanium-tantalum (Ti-Ta) alloys (10-30 wt.% Ta) was investigated and compared with conventional implant materials, i.e., commercially pure titanium (Cp-Ti) and titanium-aluminium-vanadium (Ti6Al4V) alloy. Among the three Ti-Ta alloys studied, the Ti20Ta (6.3×10(-4) mm/y) exhibited the lowest degradation rate, followed by Ti30Ta (1.2×10(-3) mm/y) and Ti10Ta (1.4×10(-3) mm/y). All the Ti-Ta alloys exhibited lower degradation rate than that of Cp-Ti (1.8×10(-3) mm/y), which suggests that Ta addition to Ti is beneficial. As compared to Ti6Al4V alloy (8.1×10(-4) mm/y), the degradation rate of Ti20Ta alloy was lower by ~22%. However, the Ti30Ta alloy, which has closer elastic modulus to that of natural bone, showed ~48% higher degradation rate than that of Ti6Al4V alloy. Hence, to improve the degradation performance of Ti30Ta alloy, an intermediate thin porous layer was formed electrochemically on the alloy followed by calcium phosphate (CaP) electrodeposition. The coated Ti30Ta alloy (3.8×10(-3) mm/y) showed ~53% lower degradation rate than that of Ti6Al4V alloy. Thus, the study suggests that CaP coated Ti30Ta alloy can be a viable material for load-bearing permanent implants. Copyright © 2014 Elsevier B.V. All rights reserved.

Xanthine oxidase functionalized Ta2O5 nanostructures as a novel scaffold for highly sensitive SPR based fiber optic xanthine sensor.

PubMed

Kant, Ravi; Tabassum, Rana; Gupta, Banshi D

2018-01-15

Fabrication and characterization of a surface plasmon resonance based fiber optic xanthine sensor using entrapment of xanthine oxidase (XO) enzyme in several nanostructures of tantalum (v) oxide (Ta 2 O 5 ) have been reported. Chemical route was adopted for synthesizing Ta 2 O 5 nanoparticles, nanorods, nanotubes and nanowires while Ta 2 O 5 nanofibers were prepared by electrospinning technique. The synthesized Ta 2 O 5 nanostructures were characterized by photoluminescence, scanning electron microscopy, UV-Visible spectra and X-ray diffraction pattern. The probes were fabricated by coating an unclad core of the fiber with silver layer followed by the deposition of XO entrapped Ta 2 O 5 nanostructures. The crux of sensing mechanism relies on the modification of dielectric function of sensing layer upon exposure to xanthine solution of diverse concentrations, reflected in terms of shift in resonance wavelength. The sensing probe coated with XO entrapped Ta 2 O 5 nanofibers has been turned out to possess maximum sensitivity amongst the synthesized nanostructures. The probe was optimized in terms of pH of the sample and the concentration of XO entrapped in Ta 2 O 5 nanofibers. The optimized sensing probe possesses a remarkably good sensitivity of 26.2nm/µM in addition to linear range from 0 to 3µM with an invincible LOD value of 0.0127µM together with a response time of 1min. Furthermore, probe selectivity with real sample analysis ensure the usage of the sensor for practical scenario. The results reported open a novel perspective towards a sensitive, rapid, reliable and selective detection of xanthine. Copyright © 2017 Elsevier B.V. All rights reserved.

Nonlinear Brillouin amplification of finite-duration seeds in the strong coupling regime

NASA Astrophysics Data System (ADS)

Lehmann, G.; Spatschek, K. H.

2013-07-01

Parametric plasma processes received renewed interest in the context of generating ultra-intense and ultra-short laser pulses up to the exawatt-zetawatt regime. Both Raman as well as Brillouin amplifications of seed pulses were proposed. Here, we investigate Brillouin processes in the one-dimensional (1D) backscattering geometry with the help of numerical simulations. For optimal seed amplification, Brillouin scattering is considered in the so called strong coupling (sc) regime. Special emphasis lies on the dependence of the amplification process on the finite duration of the initial seed pulses. First, the standard plane-wave instability predictions are generalized to pulse models, and the changes of initial seed pulse forms due to parametric instabilities are investigated. Three-wave-interaction results are compared to predictions by a new (kinetic) Vlasov code. The calculations are then extended to the nonlinear region with pump depletion. Generation of different seed layers is interpreted by self-similar solutions of the three-wave interaction model. Similar to Raman amplification, shadowing of the rear layers by the leading layers of the seed occurs. The shadowing is more pronounced for initially broad seed pulses. The effect is quantified for Brillouin amplification. Kinetic Vlasov simulations agree with the three-wave interaction predictions and thereby affirm the universal validity of self-similar layer formation during Brillouin seed amplification in the strong coupling regime.

Patterning of magnetic thin films and multilayers using nanostructured tantalum gettering templates.

PubMed

Qiu, Wenlan; Chang, Long; Lee, Dahye; Dannangoda, Chamath; Martirosyan, Karen; Litvinov, Dmitri

2015-03-25

This work demonstrates that a nonmagnetic thin film of cobalt oxide (CoO) sandwiched between Ta seed and capping layers can be effectively reduced to a magnetic cobalt thin film by annealing at 200 °C, whereas CoO does not exhibit ferromagnetic properties at room temperature and is stable at up to ∼400 °C. The CoO reduction is attributed to the thermodynamically driven gettering of oxygen by tantalum, similar to the exothermic reduction-oxidation reaction observed in thermite systems. Similarly, annealing at 200 °C of a nonmagnetic [CoO/Pd]N multilayer thin film sandwiched between Ta seed and Ta capping layers results in the conversion into a magnetic [Co/Pd]N multilayer, a material with perpendicular magnetic anisotropy that is of interest for magnetic data storage applications. A nanopatterning approach is introduced where [CoO/Pd]N multilayers is locally reduced into [Co/Pd]N multilayers to achieve perpendicular magnetic anisotropy nanostructured array. This technique can potentially be adapted to nanoscale patterning of other systems for which thermodynamically favorable combination of oxide and gettering layers can be identified.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Microstructure and high temperature oxidation resistance of Ti-Ni gradient coating on TA2 titanium alloy fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Fencheng; Mao, Yuqing; Lin, Xin; Zhou, Baosheng; Qian, Tao

2016-09-01

To improve the high temperature oxidation resistance of TA2 titanium alloy, a gradient Ni-Ti coating was laser cladded on the surface of the TA2 titanium alloy substrate, and the microstructure and oxidation behavior of the laser cladded coating were investigated experimentally. The gradient coating with a thickness of about 420-490 μm contains two different layers, e.g. a bright layer with coarse equiaxed grain and a dark layer with fine and columnar dendrites, and a transition layer with a thickness of about 10 μm exists between the substrate and the cladded coating. NiTi, NiTi2 and Ni3Ti intermetallic compounds are the main constructive phases of the laser cladded coating. The appearance of these phases enhances the microhardness, and the dense structure of the coating improves its oxidation resistance. The solidification procedure of the gradient coating is analyzed and different kinds of solidification processes occur due to the heat dissipation during the laser cladding process.

Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

PubMed

Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

2016-01-28

The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

Ectopic expression of TaOEP16-2-5B, a wheat plastid outer envelope protein gene, enhances heat and drought stress tolerance in transgenic Arabidopsis plants.

PubMed

Zang, Xinshan; Geng, Xiaoli; Liu, Kelu; Wang, Fei; Liu, Zhenshan; Zhang, Liyuan; Zhao, Yue; Tian, Xuejun; Hu, Zhaorong; Yao, Yingyin; Ni, Zhongfu; Xin, Mingming; Sun, Qixin; Peng, Huiru

2017-05-01

Abiotic stresses, such as heat and drought, are major environmental factors restricting crop productivity and quality worldwide. A plastid outer envelope protein gene, TaOEP16-2, was identified from our previous transcriptome analysis [1,2]. In this study, the isolation and functional characterization of the TaOEP16-2 gene was reported. Three homoeologous sequences of TaOEP16-2 were isolated from hexaploid wheat, which were localized on the chromosomes 5A, 5B and 5D, respectively. These three homoeologues exhibited different expression patterns under heat stress conditions, TaOEP16-2-5B was the dominant one, and TaOEP16-2-5B was selected for further analysis. Compared with wild type (WT) plants, transgenic Arabidopsis plants overexpressing the TaOEP16-2-5B gene exhibited enhanced tolerance to heat stress, which was supported by improved survival rate, strengthened cell membrane stability and increased sucrose content. It was also found that TaOEP16-2 was induced by drought stress and involved in drought stress tolerance. TaOEP16-2-5B has the same function in ABA-controlled seed germination as AtOEP16-2. Our results suggest that TaOEP16-2-5B plays an important role in heat and drought stress tolerance, and could be utilized in transgenic breeding of wheat and other crop plants. Copyright © 2017 Elsevier B.V. All rights reserved.

The tae-miR408-Mediated Control of TaTOC1 Genes Transcription Is Required for the Regulation of Heading Time in Wheat.

PubMed

Zhao, Xiang Yu; Hong, Po; Wu, Ji Yun; Chen, Xiang Bin; Ye, Xing Guo; Pan, Yan You; Wang, Jian; Zhang, Xian Sheng

2016-03-01

Timing of flowering is not only an interesting topic in developmental biology, but it also plays a significant role in agriculture for its effects on the maturation time of seed. The hexaploid wheat (Triticum aestivum) is one of the most important crop species whose flowering time, i.e. heading time, greatly influences yield. However, it remains unclear whether and how microRNAs regulate heading time in it. In our current study, we identified the tae-miR408 in wheat and its targets in vivo, including Triticum aestivum TIMING OF CAB EXPRESSION-A1 (TaTOC-A1), TaTOC-B1, and TaTOC-D1. The tae-miR408 levels were reciprocal to those of TaTOC1s under long-day and short-day conditions. Wheat plants with a knockdown of TaTOC1s via RNA interference and overexpression of tae-miR408 showed early-heading phenotype. Furthermore, TaTOC1s expression was down-regulated by the tae-miR408 in the hexaploid wheat. In addition, other important agronomic traits in wheat, such as plant height and flag leaf angle, were regulated by both tae-miR408 and TaTOC1s. Thus, our results suggested that the tae-miR408 functions in the wheat heading time by mediating TaTOC1s expression, and the study provides important new information on the mechanism underlying heading time regulation in wheat. © 2016 American Society of Plant Biologists. All Rights Reserved.

Assessment of relative Ti, Ta, and Nb (TiTaN) enrichments in global ocean island basalts

NASA Astrophysics Data System (ADS)

Peters, B.; Day, J. M.

2013-12-01

The relative sensitivity of trace element concentrations to processes governing solid-melt and solid-fluid interactions has made them particularly useful for tracing the effects of partial melting, fractional crystallization, metasomatism and similar processes on the composition of a parental melt to a rock or mineral. Radiogenic and stable isotope compositions, in contrast, can provide information on the long-term history and provenance of magmas. Despite the distinct information derived from relative and absolute abundances of trace elements compared with isotopes, numerous studies of ocean island basalts (OIB) have attempted to use trace elements as diagnostic geochemical tracers to understand parental magma compositions. In particular, attempts have been made to correlate 'TiTaN' (Ti, Ta and Nb) anomalies to the He-Os isotopic compositions of OIB based on contributions from recycled eclogite, a theoretical high-TiTaN reservoir, and peridotite, a theoretical high-3He/4He reservoir (Jackson, et al., 2008 G-cubed). These authors have proposed that TiTaN anomalies can be used as independent indicators for recycled oceanic crust and lithospheric mantle in OIB sources, a distinction previously reserved for isotopic data. However, TiTaN anomalies appear uncorrelated to OIB mantle source composition for three reasons. First, a new geochemical compilation of global OIB shows a wide range of Ti (Ti/Ti* = 0.28 - 2.35), Ta (Ta/Ta* = 0.11 - 93.42) and Nb (Nb/Nb* = 0.13 - 17.79) anomalies that do not correlated with each other or noble gas systematics, indicating that: (i) TiTaN anomalies alone do not correspond to the primitive source traced by high-3He/4He or the solar neon component and (ii) Ti, Ta and Nb anomalies may each reflect distinct processes or origins, rather than tracing a single source or process together. Second, positive Ti anomalies can be generated by low-degree (1-10%), non-modal batch partial melting of garnet lherzolite at temperatures and pressures

Tribological properties of self-lubricating Ta-Cu films

NASA Astrophysics Data System (ADS)

Qin, Wen; Fu, Licai; Zhu, Jiajun; Yang, Wulin; Li, Deyi; Zhou, Lingping

2018-03-01

In this paper, Ta and TaCu films were deposited by using magnetron sputtering, and the tribological properties of the films against Si3N4 balls were investigated under the loads of 2 N and 5 N. The average grain sizes of both films are below 25 nm. Ta and TaCu films have approximate hardness. While the wear rate of TaCu film is much smaller than that of Ta film. Post-wear testing XRD, Raman and XPS revealed the formation of tantalum oxide on the worn surface of both Ta and TaCu films. Tantalum oxidation is effectively lubricating to reduce friction coefficient. So the friction coefficient of both Ta and TaCu film is about 0.45 under different applied loads. Meanwhile, the addition of Cu could increase the toughness of the film, and avoid the generation of wear debris, resulting in a significant increase in wear resistance.

The tae-miR408-Mediated Control of TaTOC1 Genes Transcription Is Required for the Regulation of Heading Time in Wheat1[OPEN

PubMed Central

Zhao, Xiang Yu; Hong, Po; Chen, Xiang Bin; Ye, Xing Guo; Pan, Yan You; Wang, Jian

2016-01-01

Timing of flowering is not only an interesting topic in developmental biology, but it also plays a significant role in agriculture for its effects on the maturation time of seed. The hexaploid wheat (Triticum aestivum) is one of the most important crop species whose flowering time, i.e. heading time, greatly influences yield. However, it remains unclear whether and how microRNAs regulate heading time in it. In our current study, we identified the tae-miR408 in wheat and its targets in vivo, including Triticum aestivum TIMING OF CAB EXPRESSION-A1 (TaTOC-A1), TaTOC-B1, and TaTOC-D1. The tae-miR408 levels were reciprocal to those of TaTOC1s under long-day and short-day conditions. Wheat plants with a knockdown of TaTOC1s via RNA interference and overexpression of tae-miR408 showed early-heading phenotype. Furthermore, TaTOC1s expression was down-regulated by the tae-miR408 in the hexaploid wheat. In addition, other important agronomic traits in wheat, such as plant height and flag leaf angle, were regulated by both tae-miR408 and TaTOC1s. Thus, our results suggested that the tae-miR408 functions in the wheat heading time by mediating TaTOC1s expression, and the study provides important new information on the mechanism underlying heading time regulation in wheat. PMID:26768600

Fruit and seed heteromorphism in the cold desert annual ephemeral Diptychocarpus strictus (Brassicaceae) and possible adaptive significance.

PubMed

Lu, Juanjuan; Tan, Dunyan; Baskin, Jerry M; Baskin, Carol C

2010-06-01

Diptychocarpus strictus is an annual ephemeral in the cold desert of northwest China that produces heteromorphic fruits and seeds. The primary aims of this study were to characterize the morphology and anatomy of fruits and seeds of this species and compare the role of fruit and seed heteromorphism in dispersal and germination. Shape, size, mass and dispersal of siliques and seeds and the thickness of the mucilage layer on seeds were measured, and the anatomy of siliques and seeds, the role of seed mucilage in water absorption/dehydration, germination and adherence of seeds to soil particles, the role of pericarp of lower siliques in seed dormancy and seed after-ripening and germination phenology were studied using standard procedures. Plants produce dehiscent upper siliques with a thin pericarp containing seeds with large wings and a thick mucilage layer and indehiscent lower siliques with a thick pericarp containing nearly wingless seeds with a thin mucilage layer. The dispersal ability of seeds from the upper siliques was much greater than that of intact lower siliques. Mucilage increased the amount of water absorbed by seeds and decreased the rate of dehydration. Seeds with a thick mucilage layer adhered to soil particles much better than those with a thin mucilage layer or those from which mucilage had been removed. Fresh seeds were physiologically dormant and after-ripened during summer. Non-dormant seeds germinated to high percentages in light and in darkness. Germination of seeds from upper siliques is delayed until spring primarily by drought in summer and autumn, whereas the thick, indehiscent pericarp prevents germination for >1 year of seeds retained in lower siliques. The life cycle of D. strictus is morphologically and physiologically adapted to the cold desert environment in time and space via a combination of characters associated with fruit and seed heteromorphism.

Giant magnetoresistance enhancement in spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Lai, Chih-Huang; Chen, C. J.; Chin, T. S.

2001-06-01

The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 °C annealing. The MR ratio is further increased after annealing at temperatures below 200 °C. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 °C. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios.

Spatial variations of the local density of states modified by CDWs in 1 T- TaS2- xSex

NASA Astrophysics Data System (ADS)

Hasegawa, T.; Yamaguchi, W.; Kim, J.-J.; Wei, W.; Nantoh, M.; Ikuta, H.; Kitazawa, K.; Manivannan, A.; Fujishima, A.; Uchinokura, K.

1994-07-01

Spatial variations of the local density of states (LDOS) near the Fermi level have been observed on the layered dichalcogenides 1 T- TaS2- xSex ( x = 0, 0.2, 2) for the first time. The tunneling spectra on the cleaved surfaces were measured by atomic-site tunneling (AST) spectroscopy technique at room temperature. In 1T-TaS 2, the LDOS was substantially different among the three inequivalent Ta atomic sites induced by the CDW formation. However, the surface electronic structure became homogeneous, as the Se content was increased. By substituting Se for S, the minimum position of the LDOS was systematically shifted to a higher energy side above the Fermi level.

Interfacial bonding stabilizes rhodium and rhodium oxide nanoparticles on layered Nb oxide and Ta oxide supports.

PubMed

Strayer, Megan E; Binz, Jason M; Tanase, Mihaela; Shahri, Seyed Mehdi Kamali; Sharma, Renu; Rioux, Robert M; Mallouk, Thomas E

2014-04-16

Metal nanoparticles are commonly supported on metal oxides, but their utility as catalysts is limited by coarsening at high temperatures. Rhodium oxide and rhodium metal nanoparticles on niobate and tantalate supports are anomalously stable. To understand this, the nanoparticle-support interaction was studied by isothermal titration calorimetry (ITC), environmental transmission electron microscopy (ETEM), and synchrotron X-ray absorption and scattering techniques. Nanosheets derived from the layered oxides KCa2Nb3O10, K4Nb6O17, and RbTaO3 were compared as supports to nanosheets of Na-TSM, a synthetic fluoromica (Na0.66Mg2.68(Si3.98Al0.02)O10.02F1.96), and α-Zr(HPO4)2·H2O. High surface area SiO2 and γ-Al2O3 supports were also used for comparison in the ITC experiments. A Born-Haber cycle analysis of ITC data revealed an exothermic interaction between Rh(OH)3 nanoparticles and the layered niobate and tantalate supports, with ΔH values in the range -32 kJ·mol(-1) Rh to -37 kJ·mol(-1) Rh. In contrast, the interaction enthalpy was positive with SiO2 and γ-Al2O3 supports. The strong interfacial bonding in the former case led to "reverse" ripening of micrometer-size Rh(OH)3, which dispersed as 0.5 to 2 nm particles on the niobate and tantalate supports. In contrast, particles grown on Na-TSM and α-Zr(HPO4)2·H2O nanosheets were larger and had a broad size distribution. ETEM, X-ray absorption spectroscopy, and pair distribution function analyses were used to study the growth of supported nanoparticles under oxidizing and reducing conditions, as well as the transformation from Rh(OH)3 to Rh nanoparticles. Interfacial covalent bonding, possibly strengthened by d-electron acid/base interactions, appear to stabilize Rh(OH)3, Rh2O3, and Rh nanoparticles on niobate and tantalate supports.

Vortex phase diagram of the layered superconductor Cu0.03TaS2 for H \\parallel c

NASA Astrophysics Data System (ADS)

Zhu, X. D.; Lu, J. C.; Sun, Y. P.; Pi, L.; Qu, Z.; Ling, L. S.; Yang, Z. R.; Zhang, Y. H.

2010-12-01

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu0.03TaS2 single crystals. A pronounced peak effect has been observed, indicating that high quality and homogeneity are vital to the peak effect. A kink has been observed in the magnetic field, H, dependence of the in-plane resistivity ρab for H\\parallel c , which corresponds to a transition from activated to diffusive behavior of the vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρab is proportional to H0.3, which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu0.03TaS2 for H \\parallel c is given.

Electronic structure and optical properties of Ta-doped and (Ta, N)-codoped SrTiO3 from hybrid functional calculations

NASA Astrophysics Data System (ADS)

Liu, Yanyu; Zhou, Wei; Wu, Ping

2017-02-01

A systematic study has been carried out to research the effect of Ta monodoping and (Ta, N)-codoping on the electronic structure and optical properties of SrTiO3. The results indicate that the incorporation of N into the SrTiO3 lattice is in favor of the substitution of Ta at a Ti site, which is the most favorable structure with respect to both the energetic stability and high photocatalytic activity. Furthermore, the carrier recombination centers induced by Ta monodoping are passivated in the (Ta, N)-codoped SrTiO3 system with Ta at a Ti site. Simultaneous incorporation of N and Ta results in a band gap decreasing about 0.7 eV due to the appearance of the new states hybridized by N-p states with the O-p states above the valence band. The band alignment verifies that the (Ta, N)-codoped SrTiO3 simultaneously meets the criteria of band-edge energetic positions and band gap for the overall water splitting under visible light.

Quaternary Chalcogenide-Based Misfit Nanotubes LnS(Se)-TaS(Se)2 (Ln = La, Ce, Nd, and Ho): Synthesis and Atomic Structural Studies.

PubMed

Lajaunie, Luc; Radovsky, Gal; Tenne, Reshef; Arenal, Raul

2018-01-16

We have synthesized quaternary chalcogenide-based misfit nanotubes LnS(Se)-TaS 2 (Se) (Ln = La, Ce, Nd, and Ho). None of the compounds described here were reported in the literature as a bulk compound. The characterization of these nanotubes, at the atomic level, has been developed via different transmission electron microscopy techniques, including high-resolution scanning transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy. In particular, quantification at sub-nanometer scale was achieved by acquiring high-quality electron energy-loss spectra at high energy (∼between 1000 and 2500 eV). Remarkably, the sulfur was found to reside primarily in the distorted rocksalt LnS lattice, while the Se is associated with the hexagonal TaSe 2 site. Consequently, these quaternary misfit layered compounds in the form of nanostructures possess a double superstructure of La/Ta and S/Se with the same periodicity. In addition, the interlayer spacing between the layers and the interatomic distances within the layer vary systematically in the nanotubes, showing clear reduction when going from the lightest (La atom) to the heaviest (Ho) atom. Amorphous layers, of different nature, were observed at the surface of the nanotubes. For La-based NTs, the thin external amorphous layer (inferior to 10 nm) can be ascribed to a Se deficiency. Contrarily, for Ho-based NTs, the thick amorphous layer (between 10 and 20 nm) is clearly ascribed to oxidation. All of these findings helped us to understand the atomic structure of these new compounds and nanotubes thereof.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

O-GlcNAc-mediated interaction between VER2 and TaGRP2 elicits TaVRN1 mRNA accumulation during vernalization in winter wheat

PubMed Central

Xiao, Jun; Xu, Shujuan; Li, Chunhua; Xu, Yunyuan; Xing, Lijing; Niu, Yuda; Huan, Qing; Tang, Yimiao; Zhao, Changping; Wagner, Doris; Gao, Caixia; Chong, Kang

2014-01-01

Vernalization, sensing of prolonged cold, is important for seasonal flowering in eudicots and monocots. While vernalization silences a repressor (FLC, MADS-box transcription factor) in eudicots, it induces an activator (TaVRN1, an AP1 clade MADS-box transcription factor) in monocots. The mechanism for TaVRN1 induction during vernalization is not well understood. Here we reveal a novel mechanism for controlling TaVRN1 mRNA accumulation in response to prolonged cold sensing in wheat. The carbohydrate-binding protein VER2, a jacalin lectin, promotes TaVRN1 upregulation by physically interacting with the RNA-binding protein TaGRP2. TaGRP2 binds to TaVRN1 pre-mRNA and inhibits TaVRN1 mRNA accumulation. The physical interaction between VER2 and TaGRP2 is controlled by TaGRP2 O-GlcNAc modification, which gradually increases during vernalization. The interaction between VER2 and O-GlcNAc-TaGRP2 reduces TaGRP2 protein accumulation in the nucleus and/or promotes TaGRP2 dissociation from TaVRN1, leading to TaVRN1 mRNA accumulation. Our data reveal a new mechanism for sensing prolonged cold in temperate cereals. PMID:25091017

Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

NASA Astrophysics Data System (ADS)

Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

2013-09-01

We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

Convection and the seeding of the North Atlantic bloom

NASA Astrophysics Data System (ADS)

D'Asaro, Eric A.

Observations of vertical velocities in deep wintertime mixed layers using neutrally buoyant floats show that the convectively driven vertical velocities, roughly 1000 m per day, greatly exceed the sinking velocities of phytoplankton, 10 m or less per day. These velocities mix plankton effectively and uniformly across the convective layer and are therefore capable of returning those that have sunk to depth back into the euphotic zone. This mechanism cycles cells through the surface layer during the winter and provides a seed population for the spring bloom. A simple model of this mechanism applied to immortal phytoplankton in the subpolar Labrador Sea predicts that the seed population in early spring will be a few percent of the fall concentration if the plankton sink more slowly than the mean rate at which the surface well-mixed layer grows over the winter. Plankton that sink faster than this will mostly sink into the abyss with only a minute fraction remaining by spring. The shallower mixed layers of mid-latitudes are predicted to be much less effective at maintaining a seed population over the winter, limiting the ability of rapidly sinking cells to survive the winter.

Superstructure Ta2O5 mesocrystals derived from (NH4)2Ta2O3F6 mesocrystals with efficient photocatalytic activity.

PubMed

Yu, Xin; Li, Wei; Huang, Jian; Li, Zhonghua; Liu, Jiawen; Hu, PingAn

2018-02-06

Superstructured mesocrystalline Ta 2 O 5 nanosheets were successfully prepared from mesocrystalline (NH 4 ) 2 Ta 2 O 3 F 6 nanorods by the annealing method for the first time. The as-prepared mesocrystalline Ta 2 O 5 nanosheets in this work showed remarkable visible light absorption, mainly due to the formation of oxygen vacancy defects in the mesocrystalline Ta 2 O 5 nanosheets, which was also confirmed by XPS spectra, Raman spectra and EPR spectra. Besides, the mesocrystalline Ta 2 O 5 nanosheets showed a highly enhanced photocatalytic activity of 11 268.24 μmol g -1 h -1 , about 3.95 times that of commercial Ta 2 O 5 . Moreover, the specific surface area of the mesocrystalline Ta 2 O 5 -800 nanosheets was 16.34 m 2 g -1 , about 5.32 times that of the commercial Ta 2 O 5 (3.072 m 2 g -1 ). The valence band XPS spectra indicated a strong oxidizing ability of the mesocrystalline Ta 2 O 5 nanosheets in comparison to that of commercial Ta 2 O 5 . The formation of superstructured Ta 2 O 5 mesocrystals generated long lifetime carriers and effective conduction pathways, which greatly enhanced the photocatalytic activity for hydrogen production.

Fermi surface interconnectivity and topology in Weyl fermion semimetals TaAs, TaP, NbAs, and NbP

DOE PAGES

Lee, Chi-Cheng; Xu, Su-Yang; Huang, Shin-Ming; ...

2015-12-01

The family of binary compounds including TaAs, TaP, NbAs, and NbP was recently discovered as the first realization of Weyl semimetals. In order to develop a comprehensive description of the charge carriers in these Weyl semimetals, we performed detailed and systematic electronic band structure calculations which reveal the nature of Fermi surfaces and their complex interconnectivity in TaAs, TaP, NbAs, and NbP. In conclusion, our work reports a comparative and comprehensive study of Fermi surface topology and band structure details of all known members of the Weyl semimetal family and hence provides the fundamental knowledge for realizing the many predictedmore » exotic topological quantum physics of Weyl semimetals based on the TaAs class of materials.« less

Space Exposed Experiment Developed for Students (SEEDS) P-0004-2

NASA Technical Reports Server (NTRS)

Grigsby, Doris K.

1991-01-01

This cooperative endeavor of NASA Headquarters, the NASA Langley Research Center, and the George W. Park Seed Company, resulted in the distribution, by the end of March, 1990, of approximately 132,000 space exposed experiment developed for students (SEEDS) kits to 64,000 teachers representing 40,000 classrooms and 3.3 million kindergarden through university students. Kits were sent to every state, as well as to 30 foreign countries. Preliminary radiation data indicates that layer A received 725 rads, while layer D received 350 rads. Germination rate was reported to be 73.8 percent for space exposed seeds and 70.3 percent for earth based control seeds. Tests conducted within the first six months after retrieval indicated space exposed seeds germinated in an average of 8.0 days, while earth based control seeds' average germination rate was 8.3 days. Some mutations (assumed to be radiation induced) reported by students and Park Seed include plants that added a leaf instead of the usual flower at the end of the flower front and fruit produced from a flower with a variegated calyx bore seeds producing albino plants, while fruit from a flower with a green calyx from the same plant bore seeds produced green plants.

Online gamma-camera imaging of 103Pd seeds (OGIPS) for permanent breast seed implantation

NASA Astrophysics Data System (ADS)

Ravi, Ananth; Caldwell, Curtis B.; Keller, Brian M.; Reznik, Alla; Pignol, Jean-Philippe

2007-09-01

Permanent brachytherapy seed implantation is being investigated as a mode of accelerated partial breast irradiation for early stage breast cancer patients. Currently, the seeds are poorly visualized during the procedure making it difficult to perform a real-time correction of the implantation if required. The objective was to determine if a customized gamma-camera can accurately localize the seeds during implantation. Monte Carlo simulations of a CZT based gamma-camera were used to assess whether images of suitable quality could be derived by detecting the 21 keV photons emitted from 74 MBq 103Pd brachytherapy seeds. A hexagonal parallel hole collimator with a hole length of 38 mm, hole diameter of 1.2 mm and 0.2 mm septa, was modeled. The design of the gamma-camera was evaluated on a realistic model of the breast and three layers of the seed distribution (55 seeds) based on a pre-implantation CT treatment plan. The Monte Carlo simulations showed that the gamma-camera was able to localize the seeds with a maximum error of 2.0 mm, using only two views and 20 s of imaging. A gamma-camera can potentially be used as an intra-procedural image guidance system for quality assurance for permanent breast seed implantation.

Resonances in odd-odd 182Ta

NASA Astrophysics Data System (ADS)

Brits, C. P.; Wiedeking, M.; Bello Garrote, F. L.; Bleuel, D. L.; Giacoppo, F.; Görgen, A.; Guttormsen, M.; Hadynska-Klek, K.; Hagen, T. W.; Ingeberg, V. W.; Kheswa, B. V.; Klintefjord, M.; Larsen, A. C.; Malatji, K. L.; Nyhus, H. T.; Papka, P.; Renstrøm, T.; Rose, S.; Sahin, E.; Siem, S.; Tveten, G. M.; Zeiser, F.

2017-09-01

Enhanced γ-decay on the tail of the giant electric dipole resonance, such as the scissors or pygmy resonances, can have significant impact on (n,γ) reaction rates. These rates are important input for modeling processes that take place in astrophysical environments and nuclear reactors. Recent results from the University of Oslo indicate the existence of a significant enhancement in the photon strength function for nuclei in the actinide region due to the scissors resonance. Further, the M1 strength distribution of the scissors resonances in rare earth nuclei has been studied extensively over the years. To investigate the evolution and persistence of the scissor resonance in other mass regions, an experiment was performed utilizing the NaI(Tl) γ-ray detector array (CACTUS) and silicon particle telescopes (SiRi) at the University of Oslo Cyclotron laboratory. Particle-γ coincidences from the 181Ta(d,p)182Ta and 181Ta(d,d')181Ta reactions were used to measure the nuclear level density and photon strength function of the well-deformed 181Ta and 182Ta systems, to investigate the existence of resonances below the neutron separation energy. Note to the reader: the title of this article has been corrected on September 19, 2017.

Novel elastic, lattice dynamics and thermodynamic properties of metallic single-layer transition metal phosphides: 2H-M 2P (Mo2P, W2P, Nb2P and Ta2P)

NASA Astrophysics Data System (ADS)

Yin, Jiuren; Wu, Bozhao; Wang, Yanggang; Li, Zhimi; Yao, Yuanpeng; Jiang, Yong; Ding, Yanhuai; Xu, Fu; Zhang, Ping

2018-04-01

Recently, there has been a surge of interest in the research of two-dimensional (2D) phosphides due to their unique physical properties and wide applications. Transition metal phosphides 2H-M 2Ps (Mo2P, W2P, Nb2P and Ta2P) show considerable catalytic activity and energy storage potential. However, the electronic structure and mechanical properties of 2D 2H-M 2Ps are still unrevealed. Here, first-principles calculations are employed to investigate the lattice dynamics, elasticity and thermodynamic properties of 2H-M 2Ps. Results show that M 2Ps with lower stiffness exhibit remarkable lateral deformation under unidirectional loads. Due to the largest average Grüneisen parameter, single-layer Nb2P has the strongest anharmonic vibrations, resulting in the highest thermal expansion coefficient. The lattice thermal conductivities of Ta2P, W2P and Nb2P contradict classical theory, which would predict a smaller thermal conductivity due to the much heavier atom mass. Moreover, the calculations also demonstrate that the thermal conductivity of Ta2P is the highest as well as the lowest thermal expansion, owing to its weak anharmonic phonon scattering and the lowest average Grüneisen parameter. The insight provided by this study may be useful for future experimental and theoretical studies concerning 2D transition metal phosphide materials.

The role of seed bank in the dynamics of understorey in an oak forest in Hungary.

PubMed

Koncz, G; Papp, Mária; Török, P; Kotroczó, Zs; Krakomperger, Zs; Matus, G; Tóthmérész, B

2010-01-01

We studied the potential role of seed bank in the dynamics of the understorey in a turkey oak-sessile oak forest (Querceteum petraeae-cerris) in Hungary. We used long-term records of the herb layer (1973-2006) and the seed bank composition of 2006 to assess the role of seed bank in the regeneration of herb layer. The total cover of herb layer decreased from 22% (1973) to 6% (1988), and remained low (<10%) till 2006; coinciding with the increasing cover of secondary canopy dominated by Acer campestre. We found a low density seed bank (ca. 1300 seeds/m2). Altogether 33 species were germinated from the soil samples. A few generalist weed species composed the majority of seed bank. It was possible to assign a seed bank type for 19 species; 14 species out of 19 was long-term persistent. We found that the characteristic perennial forest herbs and grasses had only sparse seed bank. The Jaccard similarity between vegetation and seed bank was low (<30%). Our results suggest that the continuous establishment of forest herbs are not based on local persistent seed bank; it should be based on vegetative spreading and/or seed rain.

Tomato Seed Coat Permeability to Selected Carbon Nanomaterials and Enhancement of Germination and Seedling Growth

PubMed Central

Ratnikova, Tatsiana A.; Rao, Apparao M.; Taylor, Alan G.

2015-01-01

Seed coat permeability was examined using a model that tested the effects of soaking tomato (Solanum lycopersicon) seeds in combination with carbon-based nanomaterials (CBNMs) and ultrasonic irradiation (US). Penetration of seed coats to the embryo by CBNMs, as well as CBNMs effects on seed germination and seedling growth, was examined. Two CBNMs, C60(OH)20 (fullerol) and multiwalled nanotubes (MWNTs), were applied at 50 mg/L, and treatment exposure ranged from 0 to 60 minutes. Bright field, fluorescence, and electron microscopy and micro-Raman spectroscopy provided corroborating evidence that neither CBNM was able to penetrate the seed coat. The restriction of nanomaterial (NM) uptake was attributed to the semipermeable layer located at the innermost layer of the seed coat adjacent to the endosperm. Seed treatments using US at 30 or 60 minutes in the presence of MWNTs physically disrupted the seed coat; however, the integrity of the semipermeable layer was not impaired. The germination percentage and seedling length and weight were enhanced in the presence of MWNTs but were not altered by C60(OH)20. The combined exposure of seeds to NMs and US provided insight into the nanoparticle-seed interaction and may serve as a delivery system for enhancing seed germination and early seedling growth. PMID:26495423

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

An Endosperm-Associated Cuticle Is Required for Arabidopsis Seed Viability, Dormancy and Early Control of Germination

PubMed Central

Loubery, Sylvain; Utz-Pugin, Anne; Bailly, Christophe; Mène-Saffrané, Laurent; Lopez-Molina, Luis

2015-01-01

Cuticular layers and seeds are prominent plant adaptations to terrestrial life that appeared early and late during plant evolution, respectively. The cuticle is a waterproof film covering plant aerial organs preventing excessive water loss and protecting against biotic and abiotic stresses. Cutin, consisting of crosslinked fatty acid monomers, is the most abundant and studied cuticular component. Seeds are dry, metabolically inert structures promoting plant dispersal by keeping the plant embryo in an arrested protected state. In Arabidopsis thaliana seeds, the embryo is surrounded by a single cell endosperm layer itself surrounded by a seed coat layer, the testa. Whole genome analyses lead us to identify cutin biosynthesis genes as regulatory targets of the phytohormones gibberellins (GA) and abscisic acid (ABA) signaling pathways that control seed germination. Cutin-containing layers are present in seed coats of numerous species, including Arabidopsis, where they regulate permeability to outer compounds. However, the role of cutin in mature seed physiology and germination remains poorly understood. Here we identify in mature seeds a thick cuticular film covering the entire outer surface of the endosperm. This seed cuticle is defective in cutin-deficient bodyguard1 seeds, which is associated with alterations in endospermic permeability. Furthermore, mutants affected in cutin biosynthesis display low seed dormancy and viability levels, which correlates with higher levels of seed lipid oxidative stress. Upon seed imbibition cutin biosynthesis genes are essential to prevent endosperm cellular expansion and testa rupture in response to low GA synthesis. Taken together, our findings suggest that in the course of land plant evolution cuticular structures were co-opted to achieve key physiological seed properties. PMID:26681322

An Endosperm-Associated Cuticle Is Required for Arabidopsis Seed Viability, Dormancy and Early Control of Germination.

PubMed

De Giorgi, Julien; Piskurewicz, Urszula; Loubery, Sylvain; Utz-Pugin, Anne; Bailly, Christophe; Mène-Saffrané, Laurent; Lopez-Molina, Luis

2015-12-01

Cuticular layers and seeds are prominent plant adaptations to terrestrial life that appeared early and late during plant evolution, respectively. The cuticle is a waterproof film covering plant aerial organs preventing excessive water loss and protecting against biotic and abiotic stresses. Cutin, consisting of crosslinked fatty acid monomers, is the most abundant and studied cuticular component. Seeds are dry, metabolically inert structures promoting plant dispersal by keeping the plant embryo in an arrested protected state. In Arabidopsis thaliana seeds, the embryo is surrounded by a single cell endosperm layer itself surrounded by a seed coat layer, the testa. Whole genome analyses lead us to identify cutin biosynthesis genes as regulatory targets of the phytohormones gibberellins (GA) and abscisic acid (ABA) signaling pathways that control seed germination. Cutin-containing layers are present in seed coats of numerous species, including Arabidopsis, where they regulate permeability to outer compounds. However, the role of cutin in mature seed physiology and germination remains poorly understood. Here we identify in mature seeds a thick cuticular film covering the entire outer surface of the endosperm. This seed cuticle is defective in cutin-deficient bodyguard1 seeds, which is associated with alterations in endospermic permeability. Furthermore, mutants affected in cutin biosynthesis display low seed dormancy and viability levels, which correlates with higher levels of seed lipid oxidative stress. Upon seed imbibition cutin biosynthesis genes are essential to prevent endosperm cellular expansion and testa rupture in response to low GA synthesis. Taken together, our findings suggest that in the course of land plant evolution cuticular structures were co-opted to achieve key physiological seed properties.

75 FR 43564 - TA-W-71,483, Continental Airlines, Inc., Reservations Division, Houston, TX; TA-W-71,483A...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-26

... DEPARTMENT OF LABOR Employment and Training Administration TA-W-71,483, Continental Airlines, Inc., Reservations Division, Houston, TX; TA-W-71,483A, Continental Airlines, Inc., Reservations Division, Tampa, FL; TA-W-71,483B, Continental Airlines, Inc., Reservations Division, Salt Lake City, UT; Notice of Negative Determination Regarding...

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Switchable and tunable film bulk acoustic resonator fabricated using barium strontium titanate active layer and Ta{sub 2}O{sub 5}/SiO{sub 2} acoustic reflector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sbrockey, N. M., E-mail: sbrockey@structuredmaterials.com; Tompa, G. S.; Kalkur, T. S.

2016-08-01

A solidly mounted acoustic resonator was fabricated using a Ba{sub 0.60}Sr{sub 0.40}TiO{sub 3} (BST) film deposited by metal organic chemical vapor deposition. The device was acoustically isolated from the substrate using a Bragg reflector consisting of three pairs of Ta{sub 2}O{sub 5}/SiO{sub 2} layers deposited by chemical solution deposition. Transmission electron microscopy verified that the Bragg reflector was not affected by the high temperatures and oxidizing conditions necessary to process high quality BST films. Electrical characterization of the resonator demonstrated a quality factor (Q) of 320 and an electromechanical coupling coefficient (K{sub t}{sup 2}) of 7.0% at 11 V.

Pre-Test Analysis Predictions for the Shell Buckling Knockdown Factor Checkout Tests - TA01 and TA02

NASA Technical Reports Server (NTRS)

Thornburgh, Robert P.; Hilburger, Mark W.

2011-01-01

This report summarizes the pre-test analysis predictions for the SBKF-P2-CYL-TA01 and SBKF-P2-CYL-TA02 shell buckling tests conducted at the Marshall Space Flight Center (MSFC) in support of the Shell Buckling Knockdown Factor (SBKF) Project, NASA Engineering and Safety Center (NESC) Assessment. The test article (TA) is an 8-foot-diameter aluminum-lithium (Al-Li) orthogrid cylindrical shell with similar design features as that of the proposed Ares-I and Ares-V barrel structures. In support of the testing effort, detailed structural analyses were conducted and the results were used to monitor the behavior of the TA during the testing. A summary of predicted results for each of the five load sequences is presented herein.

Structural and dielectric properties of Sr3(MgTa2)O9 and Sr3(ZnTa2)O9

NASA Astrophysics Data System (ADS)

Hoque, Md. M.; Dutta, Alo; Kumar, S.; Sinha, T. P.

2015-07-01

Herein, we report the crystal structures and morphological properties of Sr3(MgTa2)O9 (SMT) and Sr3(ZnTa2)O9 (SZT) synthesized by solid state ceramic method along with the results of alternating current impedance spectroscopic (ACIS) study in a frequency range from 50 Hz to 1 MHz at selective temperatures between 393 and 573 K. The crystal structures of SMT and SZT have been determined by Rietveld refinement of powder X-ray diffraction pattern using an initial structural model developed on the basis of literature survey. The results indicate that both the samples possess hexagonal structure of trigonal P 3 bar m 1 space group. The lattice parameters of SMT are a=b=5.65162 Å, c=6.94440 Å, α=β=90° and γ=120° and those of SZT are a=b=5.65832 Å, c=6.95911 Å and α=β=90° and γ=120°. SMT and SZT are isostructural and they exhibit 2:1 B site ordering with the staking sequence of {-Ta-Ta-Mg (Zn)-} (Mg for SMT and Zn for SZT) layer repeat on (111) plane of the pseudocells. The characteristic vibrational bands due to Ta-O, Mg-O and Zn-O bonds have been observed in the FTIR spectra of the samples. The FESEM micrographs of the samples show that the grains size ranges between 0.40 and 3.65 μm and 0.9 to 4.2 μm for SMT and SZT, respectively. To account for the polydispersive nature of the dielectric relaxation mechanism along with the effects of dc conductivity and localized space charges the variation of real (ε‧) and imaginary (ε″) parts of dielectric constant with frequency has been analytically interpreted in the framework of modified Cole-Cole model. SMT and SZT having the activation energies of 0.35 eV and 0.33 eV, respectively (obtained from the Arrhenius plot of dc conductivity), are semiconducting in nature. The electrical current conduction in the samples occurs by polaron hopping process. Further, we have shown that chemical property of A site cations has significant role in determining the dielectric properties of A3B‧B″2O9 type perovskites

Mannans and endo-β-mannanase transcripts are located in different seed compartments during Brassicaceae germination.

PubMed

Carrillo-Barral, Néstor; Matilla, Angel J; Rodríguez-Gacio, María Del Carmen; Iglesias-Fernández, Raquel

2018-03-01

Mannans but not endo-β-mannanases are mainly found in the mucilage layer of two Brassicaceae seeds. Nonetheless, mannanase mobilization from inner to outer seed layers cannot be ruled out. The contribution of endo-β-mannanase (MAN) genes to the germination of the wild-type Sisymbrium officinale and cultivated Brassica rapa (Brassicaceae) species has been explored. In both species, mannans have been localized to the imbibed external seed coat layer (mucilage) by fluorescence immunolocalization and MAN enzymatic activity increases in seeds as imbibition progresses, reaching a peak before 100% germination is achieved. The MAN gene families have been annotated and the expression of their members analyzed in vegetative and reproductive organs. In S. officinale and B. rapa, MAN2, MAN5, MAN6, and MAN7 transcripts accumulate upon seed imbibition. SoMAN7 is the most expressed MAN gene in S. officinale germinating seeds, as occurs with its ortholog in Arabidopsis thaliana, but in B. rapa, the most abundant transcripts are BrMAN2 and BrMAN5. These genes (MAN2, MAN5, MAN6, and MAN7) are localized, by mRNA in situ hybridization, to the micropylar at the endosperm layer and to the radicle in S. officinale, but in B. rapa, these mRNAs are faintly found to the micropylar living seed coat layer and are mainly present at the radicle tip and the vascular bundles. If the domestication process undergone by B. rapa is responsible for these different MAN expression patterns, upon germination remains to be elucidated. Since mannans and MAN genes are not spatially distributed in the same seed tissues, a movement of MAN enzymes that are synthesized with typical signal peptides from the embryo tissues to the mucilage layer (via apoplastic space) is necessary for the mannans to be hydrolyzed.

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

...) “U.S. Grade A” is the quality of Raisins with Seeds that have similar varietal characteristics; that... requirements as outlined in Table II of this subpart. (b) “U.S. Grade B” is the quality of Raisins with Seeds... in Table II of this subpart. (c) “U.S. Grade C” is the quality of Raisins with Seeds that have...

Electrochemical characterization of pulsed layer deposited hydroxyapatite-zirconia layers on Ti-21Nb-15Ta-6Zr alloy for biomedical application

NASA Astrophysics Data System (ADS)

Izquierdo, Javier; Bolat, Georgiana; Cimpoesu, Nicanor; Trinca, Lucia Carmen; Mareci, Daniel; Souto, Ricardo Manuel

2016-11-01

A new titanium base Ti-21Nb-15Ta-6Zr alloy covered with hydroxyapatite-zirconia (HA-ZrO2) by pulsed laser deposition (PLD) technique was characterized regarding its corrosion resistance in simulated physiological Ringer's solution at 37 °C. For the sake of comparison, Ti-6Al-4V standard implant alloy, with and without hydroxyapatite-zirconia coating, was also characterized. Multiscale electrochemical analysis using both conventional averaging electrochemical techniques, namely electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization, and spatially-resolved microelectrochemical techniques (scanning electrochemical microscopy, SECM) were used to investigate the electrochemical behaviour of the materials. In addition, scanning electron microscopy evidenced that no relevant surface morphology changes occurred on the materials upon immersion in the simulated physiological solution, despite variations in their electrochemical behaviour. Although uncoated metals appear to show better performances during conventional corrosion tests, the response is still quite similar for the HA-ZrO2 coated materials while providing superior resistance towards electron transfer due to the formation of a more dense film on the surface, thus effectively behaving as a passive material. It is believed corrosion of the HA-ZrO2 coated Ti-21Nb-15Ta-6Zr alloy will have negligible effect upon biochemical and cellular events at the bone-implant interface and could facilitate osseointegration.

Study of irradiation damage induced by He2+ ion irradiation in Ni62Ta38 metallic glass and W metal

NASA Astrophysics Data System (ADS)

Zhang, Xiaonan; Mei, Xianxiu; Zhang, Qi; Li, Xiaona; Wang, Yingmin; Wang, Younian

2017-09-01

Metallic glasses are considered to possess good resistant against irradiation due to their inherent structural long-range disorder and a lack of grain boundaries. The He2+ with an energy of 300 keV was used to irradiate Ni62Ta38 binary metallic glass to investigate its resistance against the irradiation, and the irradiated behaviour of the metallic glass was compared with that of W metal. The irradiation fluence range over 2.0 × 1017 ions/cm2-1.6 × 1018 ions/cm2. The TEM results show that nanocrystals of μ-NiTa phase and Ni2Ta phase appeared in Ni62Ta38 metallic glass under the irradiation fluence of 1.6 × 1018 ions/cm2. The SEM results show that the surfaces of Ni62Ta38 metallic glasses maintained flat and smooth, whereas a large area of blisters with peeling formed on the surface of W metal at the irradiation fluence of 1.0 × 1018 ions/cm2. It indicates that the critical irradiation fluence of surface breakage of the Ni62Ta38 metallic glass is higher than that of W metal. After the irradiation, stress was generated in the surface layer of W metal, leading to the increase of the hardness of W metal.

TA-55 change control manual

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blum, T.W.; Selvage, R.D.; Courtney, K.H.

This manual is the guide for initiating change at the Plutonium Facility, which handles the processing of plutonium as well as research on plutonium metallurgy. It describes the change and work control processes employed at TA-55 to ensure that all proposed changes are properly identified, reviewed, approved, implemented, tested, and documented so that operations are maintained within the approved safety envelope. All Laboratory groups, their contractors, and subcontractors doing work at TA-55 follow requirements set forth herein. This manual applies to all new and modified processes and experiments inside the TA-55 Plutonium Facility; general plant project (GPP) and line itemmore » funded construction projects at TA-55; temporary and permanent changes that directly or indirectly affect structures, systems, or components (SSCs) as described in the safety analysis, including Facility Control System (FCS) software; and major modifications to procedures. This manual does not apply to maintenance performed on process equipment or facility SSCs or the replacement of SSCs or equipment with documented approved equivalents.« less

Investigation of the nanodomain structure formation by piezoelectric force microscopy and Raman confocal microscopy in LiNbO3 and LiTaO3 crystals

NASA Astrophysics Data System (ADS)

Shur, V. Ya.; Zelenovskiy, P. S.; Nebogatikov, M. S.; Alikin, D. O.; Sarmanova, M. F.; Ievlev, A. V.; Mingaliev, E. A.; Kuznetsov, D. K.

2011-09-01

Piezoelectric force microscopy (PFM) and Raman confocal microscopy have been used for studying the nanodomain structures in congruent LiNbO3 and LiTaO3 crystals. The high-resolution nanodomain images at the surface were observed via PFM. Raman confocal microscopy has been used for the visualization of the nanodomain structures in the bulk via layer-by-layer scanning at various depths. It has been shown experimentally that the nanodomain images obtained at different depths correspond to domain images at the polar surface obtained at different moments: the deeper the nanodomain, the earlier the moment. Such a correlation was applied for the reconstruction of the evolution of the domain structures with charged domain walls. The studied domain structures were obtained in highly non-equilibrium switching conditions realized in LiNbO3 and LiTaO3 via pulse laser irradiation and the electric field poling of LiNbO3, with the surface layer modified by ion implantation. The revealed main stages of the domain structure evolution allow the authors to demonstrate that all geometrically different nanodomain structures observed in LiNbO3 and LiTaO3 appeared as a result of discrete switching.

Drought-responsive WRKY transcription factor genes TaWRKY1 and TaWRKY33 from wheat confer drought and/or heat resistance in Arabidopsis.

PubMed

He, Guan-Hua; Xu, Ji-Yuan; Wang, Yan-Xia; Liu, Jia-Ming; Li, Pan-Song; Chen, Ming; Ma, You-Zhi; Xu, Zhao-Shi

2016-05-23

Drought stress is one of the major causes of crop loss. WRKY transcription factors, as one of the largest transcription factor families, play important roles in regulation of many plant processes, including drought stress response. However, far less information is available on drought-responsive WRKY genes in wheat (Triticum aestivum L.), one of the three staple food crops. Forty eight putative drought-induced WRKY genes were identified from a comparison between de novo transcriptome sequencing data of wheat without or with drought treatment. TaWRKY1 and TaWRKY33 from WRKY Groups III and II, respectively, were selected for further investigation. Subcellular localization assays revealed that TaWRKY1 and TaWRKY33 were localized in the nuclei in wheat mesophyll protoplasts. Various abiotic stress-related cis-acting elements were observed in the promoters of TaWRKY1 and TaWRKY33. Quantitative real-time PCR (qRT-PCR) analysis showed that TaWRKY1 was slightly up-regulated by high-temperature and abscisic acid (ABA), and down-regulated by low-temperature. TaWRKY33 was involved in high responses to high-temperature, low-temperature, ABA and jasmonic acid methylester (MeJA). Overexpression of TaWRKY1 and TaWRKY33 activated several stress-related downstream genes, increased germination rates, and promoted root growth in Arabidopsis under various stresses. TaWRKY33 transgenic Arabidopsis lines showed lower rates of water loss than TaWRKY1 transgenic Arabidopsis lines and wild type plants during dehydration. Most importantly, TaWRKY33 transgenic lines exhibited enhanced tolerance to heat stress. The functional roles highlight the importance of WRKYs in stress response.

Scaling of anomalous Hall effect in Ta/CoFeB/MgAl2O4/Ta multilayers

NASA Astrophysics Data System (ADS)

Wu, Yong; Zhang, Qimeng; Meng, Kangkang; Chen, Jikun; Xu, Xiaoguang; Miao, Jun; Jiang, Yong

2017-06-01

The anomalous Hall effect (AHE) is studied in Ta/CoFeB/MgAl2O4/Ta multilayers with different thicknesses of MgAl2O4 (t), which causes in-plane magnetic anisotropy (IMA) for t = 1.0 nm and perpendicular magnetic anisotropy (PMA) for t ≥ 1.2 nm. Conventional scaling was demonstrated to be not inadequate in our case. The origin of the AHE in Ta/CoFeB/MgAl2O4/Ta multilayers is mainly an extrinsic mechanism. The contribution of skew scattering (SS) is unneglectable, and both the SS and side jump are enhanced when the magnetic anisotropy changes from IMA to PMA, indicating that the oxidation at the interface of CoFeB/MgAl2O4 has a dominant influence on the AHE.

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Processing Ti-25Ta-5Zr Bioalloy via Anodic Oxidation Procedure at High Voltage

NASA Astrophysics Data System (ADS)

Ionita, Daniela; Grecu, Mihaela; Dilea, Mirela; Cojocaru, Vasile Danut; Demetrescu, Ioana

2011-12-01

The current paper reports the processing of Ti-25Ta-5Zr bioalloy via anodic oxidation in NH4BF4 solution under constant potentiostatic conditions at high voltage to obtain more suitable properties for biomedical application. The maximum efficiency of the procedure is reached at highest applied voltage, when the corrosion rate in Hank's solution is decreased approxomately six times. The topography of the anodic layer has been studied using atomic force microscopy (AFM), and the results indicated that the anodic oxidation process increases the surface roughness. The AFM images indicated a different porosity for the anodized surfaces as well. After anodizing, the hydrophilic character of Ti-25Ta-5Zr samples has increased. A good correlation between corrosion rate obtained from potentiodynamic curves and corrosion rate from ions release analysis was obtained.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

NASA Astrophysics Data System (ADS)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

The Wheat Mediator Subunit TaMED25 Interacts with the Transcription Factor TaEIL1 to Negatively Regulate Disease Resistance against Powdery Mildew.

PubMed

Liu, Jie; Zhang, Tianren; Jia, Jizeng; Sun, Jiaqiang

2016-03-01

Powdery mildew, caused by the biotrophic fungal pathogen Blumeria graminis f. sp. tritici, is a major limitation for the production of bread wheat (Triticum aestivum). However, to date, the transcriptional regulation of bread wheat defense against powdery mildew remains largely unknown. Here, we report the function and molecular mechanism of the bread wheat Mediator subunit 25 (TaMED25) in regulating the bread wheat immune response signaling pathway. Three homoalleles of TaMED25 from bread wheat were identified and mapped to chromosomes 5A, 5B, and 5D, respectively. We show that knockdown of TaMED25 by barley stripe mosaic virus-induced gene silencing reduced bread wheat susceptibility to the powdery mildew fungus during the compatible plant-pathogen interaction. Moreover, our results indicate that MED25 may play a conserved role in regulating bread wheat and barley (Hordeum vulgare) susceptibility to powdery mildew. Similarly, bread wheat ETHYLENE INSENSITIVE3-LIKE1 (TaEIL1), an ortholog of Arabidopsis (Arabidopsis thaliana) ETHYLENE INSENSITIVE3, negatively regulates bread wheat resistance against powdery mildew. Using various approaches, we demonstrate that the conserved activator-interacting domain of TaMED25 interacts physically with the separate amino- and carboxyl-terminal regions of TaEIL1, contributing to the transcriptional activation activity of TaEIL1. Furthermore, we show that TaMED25 and TaEIL1 synergistically activate ETHYLENE RESPONSE FACTOR1 (TaERF1) transcription to modulate bread wheat basal disease resistance to B. graminis f. sp. tritici by repressing the expression of pathogenesis-related genes and deterring the accumulation of reactive oxygen species. Collectively, we identify the TaMED25-TaEIL1-TaERF1 signaling module as a negative regulator of bread wheat resistance to powdery mildew. © 2016 American Society of Plant Biologists. All Rights Reserved.

Mechanical behavior of Ti-Ta-based surface alloy fabricated on TiNi SMA by pulsed electron-beam melting of film/substrate system

NASA Astrophysics Data System (ADS)

Meisner, S. N.; Yakovlev, E. V.; Semin, V. O.; Meisner, L. L.; Rotshtein, V. P.; Neiman, A. A.; D'yachenko, F.

2018-04-01

The physical-mechanical properties of the Ti-Ta based surface alloy with thickness up to ∼2 μm fabricated through the multiple (up to 20 cycles) alternation of magnetron deposition of Ti70Ta30 (at.%) thin (50 nm) films and their liquid-phase mixing with the NiTi substrate by microsecond low-energy, high current pulsed electron beam (LEHCPEB: ≤15 keV, ∼2 J/cm2) are presented. Two types of NiTi substrates (differing in the methods of melting alloys) were pretreated with LEHCPEB to improve the adhesion of thin-film coating and to protect it from local delimitation because of the surface cratering under pulsed melting. The methods used in the research include nanoindentation, transmission electron microscopy, and depth profile analysis of nanohardness, Vickers hardness, elastic modulus, depth recovery ratio, and plasticity characteristic as a function of indentation depth. For comparison, similar measurements were carried out with NiTi substrates in the initial state and after LEHCPEB pretreatment, as well as on "Ti70Ta30(1 μm) coating/NiTi substrate" system. It was shown that the upper surface layer in both NiTi substrates is the same in properties after LEHCPEB pretreatment. Our data suggest that the type of multilayer surface structure correlates with its physical-mechanical properties. For NiTi with the Ti-Ta based surface alloy ∼1 μm thick, the highest elasticity falls on the upper submicrocrystalline layer measuring ∼0.2 μm and consisting of two Ti-Ta based phases: α‧‧ martensite (a = 0.475 nm, b = 0.323 nm, c = 0.464 nm) and β austenite (a = 0.327 nm). Beneath the upper layer there is an amorphous sublayer followed by underlayers with coarse (>20 nm) and fine (<20 nm) average grain sizes which provide a gradual transition of the mechanical parameters to the values of the NiTi substrate.

Effects of shot-peening and atmospheric-pressure plasma on aesthetic improvement of Ti-Nb-Ta-Zr alloy for dental applications

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Suzuki, Yuu; Ito, Michiko; Yamada, Motoko; Matsutake, Sinpei; Takashima, Seigo; Sato, Hisashi; Watanabe, Yoshimi

2018-01-01

Ti and Ti alloys are widely used for biomedical applications such as artificial joints and dental devices because of their good mechanical properties and biochemical compatibility. However, dental devices made of Ti and Ti alloys do not have the same color as teeth, so they are inferior to ceramics and polymers in terms of aesthetic properties. In a previous study, Ti-29Nb-13Ta-4.6Zr was coated with a white Ti oxide layer by heat treatment to improve its aesthetic properties. Shot-peening is a severe plastic deformation process and can introduce a large shear strain on the peened surface. In this study, the effects of shot-peening and atmospheric-pressure plasma on Ti-29Nb-13Ta-4.6Zr were investigated to form a white layer on the surface for dental applications.

Growth mechanism, surface and optical properties of ZnO nanostructures deposited on various Au-seeded thickness obtained by mist-atomization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afaah, A. N., E-mail: afaahabdullah@yahoo.com; Aadila, A., E-mail: aadilaazizali@gmail.com; Asib, N. A. M., E-mail: amierahasib@yahoo.com

2016-07-06

In this paper, growth mechanisms of ZnO nanostructures on non-seeded glass, 6 nm and 12 nm Au seed layer obtained by mist-atomization was proposed. ZnO films were successfully deposited on glass substrate with different thickness of Au seed layer i.e. 6 nm and 12 nm. The surface and optical properties of the prepared samples were investigated using Field emission scanning electron microscopy (FESEM) and photoluminescence (PL). FESEM micrograph show that ZnO nanostructure deposited on 6 nm Au seed layer has uniform formation and well distributed. From PL spectroscopy, the UV emission shows that ZnO deposited on 6 nm Au seedmore » layer has the more intense UV intensity which proved that high crystal quality of nanostructured ZnO deposited on 6 nm Au seed layer.« less

Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

NASA Astrophysics Data System (ADS)

Panda, Rudrashish; Samal, Rudranarayan; Khatua, Lizina; Das, Susanta Kumar

2018-05-01

In this work we demonstrate the growth of thin film containing high density ZnO nanorods by using drop casting of the seed layer calcinated at a low temperature of 132 °C. Chemical bath deposition (CBD) method is used to grow the nanorods. X-ray diffraction (XRD) analysis and Field Emission Scanning Electron Microscopy (FESEM) are performed for the structural and morphological characterizations of the nanorods. The average diameter and length of nanorods are found to be 33 nm and 270 nm respectively. The bandgap of the material is estimated to be 3.2 eV from the UV-Visible absorption spectroscopy. The reported method is much more cost-effective and can be used for growth of ZnO nanorods for various applications.

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

NASA Astrophysics Data System (ADS)

Svetin, Damjan; Vaskivskyi, Igor; Brazovskii, Serguei; Mihailovic, Dragan

2017-04-01

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥ and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

2016-01-01

This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

Micro-PIXE investigation of bean seeds to assist micronutrient biofortification

NASA Astrophysics Data System (ADS)

Cvitanich, Cristina; Przybyłowicz, Wojciech J.; Mesjasz-Przybyłowicz, Jolanta; Blair, Matthew W.; Astudillo, Carolina; Orłowska, Elżbieta; Jurkiewicz, Anna M.; Jensen, Erik Ø.; Stougaard, Jens

2011-10-01

This study compares the distribution and concentrations of micro- and macronutrients in different bean cultivars with the aim of optimizing the biofortification, a sustainable approach towards improving dietary quality. Micro-PIXE was used to reveal the distribution of Fe, Zn, Mn, Ca, P, S in seeds of common beans (Phaseolus vulgaris) and runner beans (Phaseolus coccineus). Average concentrations of elements in different tissues were obtained using ICP-AES. The highest concentrations of Zn in the studied beans were found in the embryonic axis, but an increased concentration of this element was also detected in the provascular bundles of the cotyledons. The first layer of cells surrounding provascular bundles accumulated high concentrations of Fe, while the next cell layer had an increased concentration of Mn. The analysis showed that the provascular bundles and the first cell layers surrounding them could have a significant role in the storage of important seed micronutrients - Zn, Fe, and Mn. This information has important implications for molecular biology studies aimed at seed biofortification.

Impurity seeding for suppression of the near scrape-off layer heat flux feature in tokamak limited plasmas

NASA Astrophysics Data System (ADS)

Nespoli, F.; Labit, B.; Furno, I.; Theiler, C.; Sheikh, U. A.; Tsui, C. K.; Boedo, J. A.; TCV Team

2018-05-01

In inboard-limited plasmas, foreseen to be used in future fusion reactor start-up and ramp down phases, the Scrape-Off Layer (SOL) exhibits two regions: the "near" and "far" SOL. The steep radial gradient of the parallel heat flux associated with the near SOL can result in excessive thermal loads onto the solid surfaces, damaging them and/or limiting the operational space of a fusion reactor. In this article, leveraging the results presented in the study by F. Nespoli et al. [Nucl. Fusion 57, 126029 (2017)], we propose a technique for the mitigation and suppression of the near SOL heat flux feature by impurity seeding. The first successful experimental results from the TCV tokamak are presented and discussed.

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

NASA Astrophysics Data System (ADS)

Ma, Q. L.; Iihama, S.; Kubota, T.; Zhang, X. M.; Mizukami, S.; Ando, Y.; Miyazaki, T.

2012-09-01

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

The Wheat Mediator Subunit TaMED25 Interacts with the Transcription Factor TaEIL1 to Negatively Regulate Disease Resistance against Powdery Mildew1

PubMed Central

Zhang, Tianren; Jia, Jizeng; Sun, Jiaqiang

2016-01-01

Powdery mildew, caused by the biotrophic fungal pathogen Blumeria graminis f. sp. tritici, is a major limitation for the production of bread wheat (Triticum aestivum). However, to date, the transcriptional regulation of bread wheat defense against powdery mildew remains largely unknown. Here, we report the function and molecular mechanism of the bread wheat Mediator subunit 25 (TaMED25) in regulating the bread wheat immune response signaling pathway. Three homoalleles of TaMED25 from bread wheat were identified and mapped to chromosomes 5A, 5B, and 5D, respectively. We show that knockdown of TaMED25 by barley stripe mosaic virus-induced gene silencing reduced bread wheat susceptibility to the powdery mildew fungus during the compatible plant-pathogen interaction. Moreover, our results indicate that MED25 may play a conserved role in regulating bread wheat and barley (Hordeum vulgare) susceptibility to powdery mildew. Similarly, bread wheat ETHYLENE INSENSITIVE3-LIKE1 (TaEIL1), an ortholog of Arabidopsis (Arabidopsis thaliana) ETHYLENE INSENSITIVE3, negatively regulates bread wheat resistance against powdery mildew. Using various approaches, we demonstrate that the conserved activator-interacting domain of TaMED25 interacts physically with the separate amino- and carboxyl-terminal regions of TaEIL1, contributing to the transcriptional activation activity of TaEIL1. Furthermore, we show that TaMED25 and TaEIL1 synergistically activate ETHYLENE RESPONSE FACTOR1 (TaERF1) transcription to modulate bread wheat basal disease resistance to B. graminis f. sp. tritici by repressing the expression of pathogenesis-related genes and deterring the accumulation of reactive oxygen species. Collectively, we identify the TaMED25-TaEIL1-TaERF1 signaling module as a negative regulator of bread wheat resistance to powdery mildew. PMID:26813794

Evaluation of the mass transfer process on thin layer drying of papaya seeds from the perspective of diffusive models

NASA Astrophysics Data System (ADS)

Dotto, Guilherme Luiz; Meili, Lucas; Tanabe, Eduardo Hiromitsu; Chielle, Daniel Padoin; Moreira, Marcos Flávio Pinto

2018-02-01

The mass transfer process that occurs in the thin layer drying of papaya seeds was studied under different conditions. The external mass transfer resistance and the dependence of effective diffusivity ( D EFF ) in relation to the moisture ratio ( \\overline{MR} ) and temperature ( T) were investigated from the perspective of diffusive models. It was verified that the effective diffusivity was affected by the moisture content and temperature. A new correlation was proposed for drying of papaya seeds in order to describe these influences. Regarding the use of diffusive models, the results showed that, at conditions of low drying rates ( T ≤ 70 °C), the external mass transfer resistance, as well as the dependence of the effective diffusivity with respect to the temperature and moisture content should be considered. At high drying rates ( T > 90 °C), the dependence of the effective diffusivity with respect to the temperature and moisture content can be neglected, but the external mass transfer resistance was still considerable in the range of air velocities used in this work.

Tailoring Curie temperature and magnetic anisotropy in ultrathin Pt/Co/Pt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S., E-mail: anil@physics.iisc.ernet.in

The dependence of perpendicular magnetization and Curie temperature (T{sub c}) of Pt/Co/Pt thin films on the thicknesses of Pt seed (Pt{sub s}) and presence of Ta buffer layer has been investigated in this work. Pt and Co thicknesses were varied between 2 to 8 nm and 0.35 to 1.31 nm (across the spin reorientation transition thickness) respectively and the T{sub c} was measured using SQUID magnetometer. We have observed a systematic dependence of T{sub c} on the thickness of Pt{sub s}. For 8 nm thickness of Pt{sub s} the Co layer of 0.35 nm showed ferromagnetism with perpendicular anisotropy atmore » room temperature. As the thickness of the Pt{sub s} was decreased to 2 nm, the T{sub c} went down below 250 K. XRD data indicated polycrystalline growth of Pt{sub s} on SiO{sub 2}. On the contrary Ta buffer layer promoted the growth of Pt(111). As a consequence Ta(5 nm)/Pt(3 nm)/Co(0.35 nm)/Pt(2 nm) had much higher T{sub c} (above 300 K) with perpendicular anisotropy when compared to the same stack without the Ta layer. Thus we could tune the ferromagnetic T{sub c} and anisotropy by varying the Pt{sub s} thickness and also by introducing Ta buffer layer. We attribute these observations to the micro-structural evolution of Pt{sub s} layer which hosts the Co layer.« less

Investigating the complex mechanism of B migration in a magnetic-tunnel-junction trilayer structure—a combined study using XPS and TOF-SIMS

NASA Astrophysics Data System (ADS)

Ying, Ji-Feng; Ji, Rong; Ter Lim, Sze; Tran, Michael N.; Wang, Chen Chen; Ernult, Franck

2016-02-01

The magnetic-tunnel-junction (MTJ) structure is the core of many important devices, such as magnetic recording head and STT-RAM. CoFeB/MgO/CoFeB tri-layer thin-film stack is a widely researched MTJ structure. In this tri-layer, the functional property of the MTJ, i.e. its TMR ratio, is critically dependent on the crystal orientation of the CoFe grains. In order for the desired (1 0 0) out of plane texture to develop in the CoFeB layers, B needs to be engineered to be expelled out of these CoFeB layers, and diffuse or migrate into the adjacent layers. Ta is usually used as a seed layer adjacent to the MTJ structure. In this work, we investigated the important B-migration mechanisms within this MTJ structure through a combined XPS/TOF-SIMS study. Specifically, we tried to elucidate the possible physical/chemical interactions between the B and Ta that could happen with different film stack designs. Previous works have shown that there might be two possible B-migration mechanisms. One mechanism is direct B diffusion into the adjacent Ta layer during annealing. The other B-migration mechanism is through the formation of TaBOx species, in which B could be carried out by the Ta diffusion. In particular, through studying a series of film stacks, we discussed the circumstances under which one of these B-migration mechanisms becomes dominant. Furthermore, we discussed how these B-migration mechanisms facilitated the B expulsion in a common MTJ structure.

Analysis of NiAlTa precipitates in beta-NiAl + 2 at. pct Ta alloy

NASA Technical Reports Server (NTRS)

Pathare, V.; Michal, G. M.; Vedula, K.; Nathal, M. V.

1987-01-01

Results are reported from experiments performed to identify the precipitates, and their orientation in the matrix, in a beta-NiAl alloy containing 2 at. pct. Ta after undergoing creep test at 1300 K. Test specimens formed by extruding hot powders were compressed at 1300 K for about 50 hr at a strain rate averaging 6/1 million per sec. The specimens were then thinned and examined under an electron microscope and by X-ray diffractometry. An intermetallic NiAlTa compound with a hexagonal Cl4 structure appeared as second phase precipitates in the samples, exhibiting plate-like shapes and a habit plane close to (012). The prism planes of the hexagonal NiAlTa precipitates paralleled the closest packed planes in the cubic beta-NiAl matrix.

Step-by-step seeding procedure for preparing HKUST-1 membrane on porous α-alumina support.

PubMed

Nan, Jiangpu; Dong, Xueliang; Wang, Wenjin; Jin, Wanqin; Xu, Nanping

2011-04-19

Metal-organic framework (MOF) membranes have attracted considerable attention because of their striking advantages in small-molecule separation. The preparation of an integrated MOF membrane is still a major challenge. Depositing a uniform seed layer on a support for secondary growth is a main route to obtaining an integrated MOF membrane. A novel seeding method to prepare HKUST-1 (known as Cu(3)(btc)(2)) membranes on porous α-alumina supports is reported. The in situ production of the seed layer was realized in step-by-step fashion via the coordination of H(3)btc and Cu(2+) on an α-alumina support. The formation process of the seed layer was observed by ultraviolet-visible absorption spectroscopy and atomic force microscopy. An integrated HKUST-1 membrane could be synthesized by the secondary hydrothermal growth on the seeded support. The gas permeation performance of the membrane was evaluated. © 2011 American Chemical Society

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Superconductivity in palladium-doped 2H-TaS2

NASA Astrophysics Data System (ADS)

Zhou, M. H.; Li, X. C.; Dong, C.

2018-06-01

A series of Pd x TaS2 (0.01 ≤ x ≤ 0.08) samples were prepared and characterized via scanning electron microscope, x-ray powder diffraction, resistivity, magnetization and specific heat measurements. The lattice parameter c associated with the interlayer distance increases monotonically with the Pd content while the parameter a remains essentially constant. The crystal structure of Pd0.08TaS2 has been determined and refined by Rietveld refinement. Pd0.08TaS2 is hexagonal (space group: P31c) with lattice parameters a = 3.3151(1) Å, c = 12.1497(9) Å. The superconducting transition temperature T c (0.8 K) of TaS2 can be dramatically enhanced by Pd doping, and the maximum T c of 4.2 K, about five times the T c of pure TaS2, is obtained in Pd0.04TaS2. We have determined the superconducting parameters of Pd0.04TaS2, and found that the enhancement of T c can be attributed to the increase of density of states at the Fermi level. The charge density wave (CDW) of TaS2 is gradually suppressed with Pd doping and disappears in Pd0.06TaS2. This suggests that there is a competitive interplay between superconductivity and CDW in this system.

Vortex phase diagram of the layered superconductor Cu0.03TaS2 for H is parallel to c.

PubMed

Zhu, X D; Lu, J C; Sun, Y P; Pi, L; Qu, Z; Ling, L S; Yang, Z R; Zhang, Y H

2010-12-22

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu(0.03)TaS(2) single crystals. A pronounced peak effect has been observed, indicating that high quality and homogeneity are vital to the peak effect. A kink has been observed in the magnetic field, H, dependence of the in-plane resistivity ρ(ab) for H is parallel to c, which corresponds to a transition from activated to diffusive behavior of the vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρ(ab) is proportional to H(0.3), which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu(0.03)TaS(2) for H is parallel to c is given.

Raman Signatures of Broken Inversion Symmetry and In-Plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4.

PubMed

Liu, Yinan; Gu, Qiangqiang; Peng, Yu; Qi, Shaomian; Zhang, Na; Zhang, Yinong; Ma, Xiumei; Zhu, Rui; Tong, Lianming; Feng, Ji; Liu, Zheng; Chen, Jian-Hao

2018-05-07

The layered ternary compound TaIrTe 4 is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe 4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe 4 crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe 4 thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Morpho-anatomy, imbibition, viability and germination of the seed of Anadenanthera colubrina var. cebil (Fabaceae).

PubMed

Varela, Rodolfo Omar; Albornoz, Patricia Liliana

2013-09-01

Seed biology is a relevant aspect of tropical forests because it is central to the understanding of processes of plant establishment, succession and natural regeneration. Anadenanthera colubrina var. cebil is a timber tree from South America that produces large seeds with thin weak teguments, which is uncommon among legumes. This study describes the morphology and anatomy of the seed coat, the viability, imbibition, and germination in this species. Seeds used during the essays came from 10 trees that grow naturally in Horco Molle, province of Tucumán, Argentina. Seed morphology was described from a sample of 20 units. The seed coat surface was examined with a scanning electron microscope. Transverse sections of hydrated and non-hydrated seeds were employed to describe the histological structure of the seed coat. Hydration, viability and germination experiments were performed under laboratory controlled conditions; and the experimental design consisted of 10 replicas of 10 seeds each. Viability and germination tests were conducted using freshly fallen seeds and seeds stored for five months. Morphologically the seeds of A. colubrina var. cebil are circular to subcircular, laterally compressed, smooth, bright brown and have a horseshoe fissure line (= pleurogram) on both sides. The seed coat comprises five tissue layers and a double (external and internal) cuticle. The outer cuticle (on the epidermis) is smooth and interrupted by microcracks and pores of variable depth. The epidermis consists of macroesclereids with non-lignified secondary walls. This layer is separated from the underlying ones during seed hydration. The other layers of internal tissues are comprised of osteosclereids, parenchyma, osteosclereids, and macrosclereids. The percentage of viable seeds was 93%, decreasing to 75% in seeds with five months old. Seed mass increased 76% after the first eight hours of hydration. Germination percentage was 75% after 76 hours. Germination of seeds stored for five

Physical, metabolic and developmental functions of the seed coat

PubMed Central

Radchuk, Volodymyr; Borisjuk, Ljudmilla

2014-01-01

The conventional understanding of the role of the seed coat is that it provides a protective layer for the developing zygote. Recent data show that the picture is more nuanced. The seed coat certainly represents a first line of defense against adverse external factors, but it also acts as channel for transmitting environmental cues to the interior of the seed. The latter function primes the seed to adjust its metabolism in response to changes in its external environment. The purpose of this review is to provide the reader with a comprehensive view of the structure and functionality of the seed coat, and to expose its hidden interaction with both the endosperm and embryo. Any breeding and/or biotechnology intervention seeking to increase seed size or modify seed features will have to consider the implications on this tripartite interaction. PMID:25346737

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Department of Physics, University of Çukurova, Adana 01330; Yu, Guoqiang

2015-04-20

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeBmore » layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting  H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.« less

Depth Profiles in Maize ( Zea mays L.) Seeds Studied by Photoacoustic Spectroscopy

NASA Astrophysics Data System (ADS)

Hernández-Aguilar, C.; Domínguez-Pacheco, A.; Cruz-Orea, A.; Zepeda-Bautista, R.

2015-06-01

Photoacoustic spectroscopy (PAS) has been used to analyze agricultural seeds and can be applied to the study of seed depth profiles of these complex samples composed of different structures. The sample depth profile can be obtained through the photoacoustic (PA) signal, amplitude, and phase at different light modulation frequencies. The PA signal phase is more sensitive to changes of thermal properties in layered samples than the PA signal amplitude. Hence, the PA signal phase can also be used to characterize layers at different depths. Thus, the objective of the present study was to obtain the optical absorption spectra of maize seeds ( Zea mays L.) by means of PAS at different light modulation frequencies (17 Hz, 30 Hz, and 50 Hz) and comparing these spectra with the ones obtained from the phase-resolved method in order to separate the optical absorption spectra of seed pericarp and endosperm. The results suggest the possibility of using the phase-resolved method to obtain optical absorption spectra of different seed structures, at different depths, without damaging the seed. Thus, PAS could be a nondestructive method for characterization of agricultural seeds and thus improve quality control in the food industry.

Fabrication of dye-sensitized solar cell (DSSC) using annato seeds (Bixa orellana Linn)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haryanto, Ditia Allindira; Landuma, Suarni; Purwanto, Agus

2014-02-24

The Fabrication of dye sensitized solar cell (DSSC) using Annato seeds has been conducted in this study. Annato seeds (Bixa orellana Linn) used as a sensitizer for dye sensitized solar cell. The experimental parameter was concentration of natural dye. Annato seeds was extracted using etanol solution and the concentration was controlled by varying mass of Annato seeds. A semiconductor TiO{sub 2} was prepared by a screen printing method for coating glass use paste of TiO{sub 2}. Construction DSSC used layered systems (sandwich) consists of working electrode (TiO{sub 2} semiconductor-dye) and counter electrode (platina). Both are placed on conductive glass andmore » electrolytes that occur electrons cycle. The characterization of thin layer of TiO{sub 2} was conducted using SEM (Scanning Electron Microscpy) analysis showed the surface morphology of TiO{sub 2} thin layer and the cross section of a thin layer of TiO{sub 2} with a thickness of 15–19 μm. Characterization of natural dye extract was determined using UV-Vis spectrometry analysis shows the wavelength range annato seeds is 328–515 nm, and the voltage (V{sub oc}) and electric current (I{sub sc}) resulted in keithley test for 30 gram, 40 gram, and 50 gram were 0,4000 V; 0,4251 V; 0,4502 V and 0,000074 A; 0,000458 A; 0,000857 A, respectively. The efficiencies of the fabricated solar cells using annato seeds as senstizer for each varying mass are 0,00799%, 0,01237%, and 0,05696%.« less

Estimation of loci involved in non-shattering of seeds in early rice domestication.

PubMed

Ishikawa, Ryo; Nishimura, Akinori; Htun, Than Myint; Nishioka, Ryo; Oka, Yumi; Tsujimura, Yuki; Inoue, Chizuru; Ishii, Takashige

2017-04-01

Rice (Oryza sativa L.) is widely cultivated around the world and is known to be domesticated from its wild form, O. rufipogon. A loss of seed shattering is one of the most obvious phenotypic changes selected for during rice domestication. Previously, three seed-shattering loci, qSH1, sh4, and qSH3 were reported to be involved in non-shattering of seeds of Japonica-type cultivated rice, O. sativa cv. Nipponbare. In this study, we focused on non-shattering characteristics of O. sativa Indica cv. IR36 having functional allele at qSH1. We produced backcross recombinant inbred lines having chromosomal segments from IR36 in the genetic background of wild rice, O. rufipogon W630. Histological and quantitative trait loci analyses of abscission layer formation were conducted. In the analysis of quantitative trait loci, a strong peak was observed close to sh4. We, nevertheless, found that some lines showed complete abscission layer formation despite carrying the IR36 allele at sh4, implying that non-shattering of seeds of IR36 could be regulated by the combination of mutations at sh4 and other seed-shattering loci. We also genotyped qSH3, a recently identified seed-shattering locus. Lines that have the IR36 alleles at sh4 and qSH3 showed inhibition of abscission layer formation but the degree of seed shattering was different from that of IR36. On the basis of these results, we estimated that non-shattering of seeds in early rice domestication involved mutations in at least three loci, and these genetic materials produced in this study may help to identify novel seed-shattering loci.

Thickness-dependent enhancement of damping in C o2FeAl /β -Ta thin films

NASA Astrophysics Data System (ADS)

Akansel, Serkan; Kumar, Ankit; Behera, Nilamani; Husain, Sajid; Brucas, Rimantas; Chaudhary, Sujeet; Svedlindh, Peter

2018-04-01

In the present work C o2FeAl (CFA) thin films were deposited by ion beam sputtering on Si (100) substrates at the optimized deposition temperature of 300 °C. A series of CFA films with different thicknesses (tCFA), 8, 10, 12, 14, 16, 18, and 20 nm, were prepared and all samples were capped with a 5-nm-thick β-Ta layer. The thickness-dependent static and dynamic properties of the films were studied by SQUID magnetometry, in-plane as well as out-of-plane broadband vector network analyzer-ferromagnetic resonance (FMR) measurements, and angle-dependent cavity FMR measurements. The saturation magnetization and the coercive field were found to be weakly thickness dependent and lie in the range 900-950 kA/m and 0.53-0.87 kA/m, respectively. The effective damping parameter (αeff) extracted from in-plane and out-of-plane FMR results reveals a 1/tCFA dependence, the values for the in-plane αeff being larger due to two-magnon scattering (TMS). The origin of the αeff thickness dependence is spin pumping into the nonmagnetic β-Ta layer and in the case of the in-plane αeff, also a thickness-dependent TMS contribution. From the out-of-plane FMR results, it was possible to disentangle the different contributions to αeff and to the extract values for the intrinsic Gilbert damping (αG) and the effective spin-mixing conductance (geff↑↓) of the CFA/ β-Ta interface, yielding αG=(1.1 ±0.2 ) ×10-3 and geff↑↓=(2.90 ±0.10 ) ×1019m-2 .

Preliminary analysis of EUSO—TA data

NASA Astrophysics Data System (ADS)

Fenu, F.; Piotrowski, L. W.; Shin, H.; Jung, A.; Bacholle, S.; Bisconti, F.; Capel, F.; Eser, J.; Kawasaki, Y.; Kuznetsov, E.; Larsson, O.; Mackovjak, S.; Miyamoto, H.; Plebaniak, Z.; Prevot, G.; Putis, M.; Shinozaki, K.; Adams, J.; Bertaina, M.; Bobik, P.; Casolino, M.; Matthews, J. N.; Ricci, M.; Wiencke, L.; EUSO-TA Collaboration

2016-05-01

The EUSO-TA detector is a pathfinder for the JEM-EUSO project and is currently installed in Black Rock Mesa (Utah) on the site of the Telescope Array fluorescence detectors. Aim of this experiment is to validate the observation principle of JEM-EUSO on air showers measured from ground. The experiment gets data in coincidence with the TA triggers to increase the likelihood of cosmic ray detection. In this framework the collaboration is also testing the detector response with respect to several test events from lasers and LED flashers. Moreover, another aim of the project is the validation of the stability of the data acquisition chain in real sky condition and the optimization of the trigger scheme for the rejection of background. Data analysis is ongoing to identify cosmic ray events in coincidence with the TA detector. In this contribution we will show the response of the EUSO-TA detector to all the different typologies of events and we will show some preliminary results on the trigger optimization performed on such data.

Electrical and thermal properties of Cu-Ta films prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Qin, Wen; Fu, Licai; Zhu, Jiajun; Yang, Wulin; Sang, Jianquan; Li, Deyi; Zhou, Lingping

2018-06-01

The microstructure, electrical resistivity and thermal conductivity of the sputtering deposited Cu-Ta films were investigated as a function of Ta content. The results showed that the amorphous phase formed between 20 at.% and 60 at.% Ta, and out of this range α-Cu(Ta) and β-Ta(Cu) solid solutions formed. Because the lattice distortion and β-Ta structure could significantly increase the probability of electron scattering, the electrical resistivity of the Cu-Ta films shows a 'N' type change with the increase of Ta content, and the inflection point appears at 50 at.% Ta and 60 at.% Ta respectively. As the thermal conductance is also dominated by electrons in metals films, an opposite variation tendency is found in the thermal conductivity of the Cu-Ta films. According to our knowledge, this is the first time to measure the thermal conductivity of Cu-Ta thin films.

Optical Thin Film Coating Having High Damage Resistance in Near-Stoichiometric MgO-Doped LiTaO3

NASA Astrophysics Data System (ADS)

Tateno, Ryo; Kashiwagi, Kunihiro

2008-08-01

Currently, High power and compact red, green, and blue (RGB) lasers are being considered for use in large screen laser televisions and reception-lobby projectors. Among these three laser sources, green semiconductor lasers are expensive and exhibit inferior performance in terms of the semiconductor material used, making it difficult to achieve a high output. In this study, we examined the use of our coating on MgO-doped LiTaO3, using a mirror coated with a multilayer film. Over a substrate, a Ta2O5 film was used to coat a high-refractive-index film layer, and a SiO2 film was used to coat a low-refractive-index film layer. To improve reflectivity, we designed the peak of the electric field intensity to be in the film layer with the low refractive index. As a result, the film endurance of 100 J/cm2 was obtained by one-on-one testing. With the nonlinear crystal material, the mirror without our coating exhibited a damage threshold of 33 J/cm2; however, after coating, this mirror demonstrated a higher damage threshold of 47 J/cm2. Thus, the film we fabricated using this technique is useful for improving the strength and durability of laser mirrors.

The mutagenic assessment of an electronic-cigarette and reference cigarette smoke using the Ames assay in strains TA98 and TA100.

PubMed

Thorne, D; Crooks, I; Hollings, M; Seymour, A; Meredith, C; Gaca, M

2016-12-01

Salmonella typhimurium strains TA98 and TA100 were used to assess the mutagenic potential of the aerosol from a commercially available, rechargeable, closed system electronic-cigarette. Results obtained were compared to those for the mainstream smoke from a Kentucky reference (3R4F) cigarette. Two different test matrices were assessed. Aerosol generated from the e-cigarette was trapped on a Cambridge filter pad, eluted in DMSO and compared to cigarette smoke total particulate matter (TPM), which was generated in the same manner for mutagenicity assessment in the Salmonella assay. Fresh e-cigarette and cigarette smoke aerosols were generated on the Vitrocell ® VC 10 smoking robot and compared using a modified scaled-down 35mm air agar interface (AAI) methodology. E-cigarette aerosol collected matter (ACM) was found to be non-mutagenic in the 85mm plate incorporation Ames assay in strains TA98 and TA100 conducted in accordance with OECD 471, when tested up to 2400μg/plate. Freshly generated e-cigarette aerosol was also found to be negative in both strains after an AAI aerosol exposure, when tested up to a 1L/min dilution for up to 3h. Positive control responses were observed in both strains, using benzo[a]pyrene, 2-nitrofluorene, sodium azide and 2-aminoanthracene in TA98 and TA100 in the presence and absence of metabolic activation respectively. In contrast, cigarette smoke TPM and aerosol from 3R4F reference cigarettes were found to be mutagenic in both tester strains, under comparable test conditions to that of e-cigarette exposure. Limited information exists on the mutagenic activity of captured e-cigarette particulates and whole aerosol AAI approaches. With the lower toxicant burden of e-cigarette aerosols compared to cigarette smoke, it is clear that a more comprehensive Ames package of data should be generated when assessing e-cigarettes, consisting of the standard OECD-five, TA98, TA100, TA1535, TA1537 (or TA97) and E. coli (or TA102). In addition, TA104

Dynamic changes in the distribution of minerals in relation to phytic acid accumulation during rice seed development.

PubMed

Iwai, Toru; Takahashi, Michiko; Oda, Koshiro; Terada, Yasuko; Yoshida, Kaoru T

2012-12-01

Phytic acid (inositol hexakisphosphate [InsP(6)]) is the storage compound of phosphorus in seeds. As phytic acid binds strongly to metallic cations, it also acts as a storage compound of metals. To understand the mechanisms underlying metal accumulation and localization in relation to phytic acid storage, we applied synchrotron-based x-ray microfluorescence imaging analysis to characterize the simultaneous subcellular distribution of some mineral elements (phosphorus, calcium, potassium, iron, zinc, and copper) in immature and mature rice (Oryza sativa) seeds. This fine-imaging method can reveal whether these elements colocalize. We also determined their accumulation patterns and the changes in phosphate and InsP(6) contents during seed development. While the InsP(6) content in the outer parts of seeds rapidly increased during seed development, the phosphate contents of both the outer and inner parts of seeds remained low. Phosphorus, calcium, potassium, and iron were most abundant in the aleurone layer, and they colocalized throughout seed development. Zinc was broadly distributed from the aleurone layer to the inner endosperm. Copper localized outside the aleurone layer and did not colocalize with phosphorus. From these results, we suggest that phosphorus translocated from source organs was immediately converted to InsP(6) and accumulated in aleurone layer cells and that calcium, potassium, and iron accumulated as phytic acid salt (phytate) in the aleurone layer, whereas zinc bound loosely to InsP(6) and accumulated not only in phytate but also in another storage form. Copper accumulated in the endosperm and may exhibit a storage form other than phytate.

The structure of Ti-Ta welded joint and microhardness distribution over the cross section

NASA Astrophysics Data System (ADS)

Fomin, Aleksandr A.; Koshuro, Vladimir A.; Egorov, Ivan S.; Shelkunov, Andrey Yu.; Zakharevich, Andrey M.; Steinhauer, Natalia N.; Rodionov, Igor V.

2018-04-01

In order to create highly efficient medical systems and measuring biosensors, an approach is frequently used, in which the constructive basis of the product is made of a high-strength biocompatible material (titanium, stainless steel), and the functional layer is made of a more expensive metal (Ta, Zr, Au, Pt, etc.) or ceramics (Ta2O5, ZrO2, CaTiO3, etc.). For a strong connection, e.g. titanium with tantalum, it is proposed to use diffusion butt welding. The heat generated by passing electric current (I is not less than 1.95-2.05 kA, P - not less than 9 kW, t = 250-1000 ms) and applied pressure (30-50 MPa) ensure an integral connection. To improve the quality of the joint, i.e. to exclude cracks and tightness, it is necessary to choose the right combination of the thickness of the welded parts. It was established that when titanium (2 mm thick) and tantalum (0.1-0.5 mm) are combined, a better Ti-Ta welded joint is formed when tantalum foil is used (0.5 mm). Here the distribution of hardness over the cross section of the sample, including the welding areas, is uniform and has no extremely high residual stresses of the tensile type.

New insights into the initial stages of Ta oxide nanotube formation on polycrystalline Ta electrodes.

PubMed

El-Sayed, Hany A; Horwood, Corie A; Abhayawardhana, Anusha D; Birss, Viola I

2013-02-21

Ta oxide nanotubes (NTs) were formed by the anodization of Ta at 15 V in a solution of concentrated sulfuric acid containing 0.8-1.0 M hydrofluoric acid. To study the initial stages of NT formation, FESEM images of samples anodized for very short times were obtained. The results contradict the existing explanation of the current-time data collected during anodization, which has persisted in the literature for more than two decades. In addition to providing a first-time morphological study of Ta oxide NT formation at very early stages of anodization, we also propose a new interpretation of the i-t response, showing that pores are already present in the first few milliseconds of anodization and that NTs are formed well before present models predict. This behaviour may also extend to the anodization of other valve metals, such as Al, Ti, Zr, W, and Nb.

Effect of Ta concentration on the refractive index of TiO{sub 2}:Ta studied by spectroscopic ellipsometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurfani, Eka, E-mail: ekanurfani@gmail.com; Kurniawan, Robi; Muhammady, Shibghatullah

2016-04-19

We have investigated optical properties of Ta-doped TiO{sub 2} thin film on LaAlO{sub 3} (LAO) substrate using Spectroscopic Ellipsometry (SE) at room temperature. Amplitude ratio Ψ and phase difference L1 between p- and s- polarized light waves are obtained by multiple incident angles measurement (60°, 70°, and 80°) at energy range of 0.5 – 6.5 eV. In order to obtain optical properties for every Ta concentrations (0.01, 0.4, and 5 at. %), multilayer modelling was performed simultaneously by using Drude-Lorentz model. Refractive index and optical dispersion parameters were determined by Wemple-DiDomenico relation. In general, refractive index at zero photon energymore » n(0) increases by increasing Ta concentration. Furthermore, optical band gap shows a significant increasing due to presence of Ta dopant. In addition, other optical constants are discussed as well.« less

Identification and Characterization of Arabidopsis Seed Coat Mucilage Proteins.

PubMed

Tsai, Allen Yi-Lun; Kunieda, Tadashi; Rogalski, Jason; Foster, Leonard J; Ellis, Brian E; Haughn, George W

2017-02-01

Plant cell wall proteins are important regulators of cell wall architecture and function. However, because cell wall proteins are difficult to extract and analyze, they are generally poorly understood. Here, we describe the identification and characterization of proteins integral to the Arabidopsis (Arabidopsis thaliana) seed coat mucilage, a specialized layer of the extracellular matrix composed of plant cell wall carbohydrates that is used as a model for cell wall research. The proteins identified in mucilage include those previously identified by genetic analysis, and several mucilage proteins are reduced in mucilage-deficient mutant seeds, suggesting that these proteins are genuinely associated with the mucilage. Arabidopsis mucilage has both nonadherent and adherent layers. Both layers have similar protein profiles except for proteins involved in lipid metabolism, which are present exclusively in the adherent mucilage. The most abundant mucilage proteins include a family of proteins named TESTA ABUNDANT1 (TBA1) to TBA3; a less abundant fourth homolog was named TBA-LIKE (TBAL). TBA and TBAL transcripts and promoter activities were detected in developing seed coats, and their expression requires seed coat differentiation regulators. TBA proteins are secreted to the mucilage pocket during differentiation. Although reverse genetics failed to identify a function for TBAs/TBAL, the TBA promoters are highly expressed and cell type specific and so should be very useful tools for targeting proteins to the seed coat epidermis. Altogether, these results highlight the mucilage proteome as a model for cell walls in general, as it shares similarities with other cell wall proteomes while also containing mucilage-specific features. © 2017 American Society of Plant Biologists. All Rights Reserved.

Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing

NASA Astrophysics Data System (ADS)

Wang, Zongwei; Yin, Minghui; Zhang, Teng; Cai, Yimao; Wang, Yangyuan; Yang, Yuchao; Huang, Ru

2016-07-01

Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament growth (dissolution) dynamics with time, therefore significantly improving the conductance modulation linearity that is desirable in neuromorphic systems. In addition, the introduction of the DLL also served to reduce the power consumption of the memristor, and important synaptic learning rules in biological brains such as spike timing dependent plasticity were successfully implemented using these optimized devices. This study could provide general implications for continued optimizations of memristor performance for neuromorphic applications, by carefully tuning the dynamics involved in filament growth and dissolution.Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament

Trichite growth during oxidation of titanium and TA6V4 alloy by water vapor at high temperatures

NASA Technical Reports Server (NTRS)

Coddet, C.; Motte, F.; Sarrazin, P.

1982-01-01

Analysis by electron scanning microscope detected the formation of rutile trichites on the surface of specimens of titanium and titanium alloy TA6V4 oxidized in water vapor in the temperature range 650 to 950 C and the water vapor pressure range from 0.5 to 18 torr. In all specimens, two sublayers of rutile were formed: an external layer of basalt-like appearance, and a microcrystalline inner layer. Morphology of the trichites depends on temperature and the material (whether metal or alloy), but not on vapor pressure.

A decrease in phytic acid content substantially affects the distribution of mineral elements within rice seeds.

PubMed

Sakai, Hiroaki; Iwai, Toru; Matsubara, Chie; Usui, Yuto; Okamura, Masaki; Yatou, Osamu; Terada, Yasuko; Aoki, Naohiro; Nishida, Sho; Yoshida, Kaoru T

2015-09-01

Phytic acid (myo-inositol hexakisphosphate; InsP6) is the storage compound of phosphorus and many mineral elements in seeds. To determine the role of InsP6 in the accumulation and distribution of mineral elements in seeds, we performed fine mappings of mineral elements through synchrotron-based X-ray microfluorescence analysis using developing seeds from two independent low phytic acid (lpa) mutants of rice (Oryza sativa L.). The reduced InsP6 in lpa seeds did not affect the translocation of mineral elements from vegetative organs into seeds, because the total amounts of phosphorus and the other mineral elements in lpa seeds were identical to those in the wild type (WT). However, the reduced InsP6 caused large changes in mineral localization within lpa seeds. Phosphorus and potassium in the aleurone layer of lpa greatly decreased and diffused into the endosperm. Zinc and copper, which were broadly distributed from the aleurone layer to the inner endosperm in the WT, were localized in the narrower space around the aleurone layer in lpa mutants. We also confirmed that similar distribution changes occurred in transgenic rice with the lpa phenotype. Using these results, we discussed the role of InsP6 in the dynamic accumulation and distribution patterns of mineral elements during seed development. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Improved Mechanical Compatibility and Cytocompatibility of Ta/Ti Double-Layered Composite Coating

NASA Astrophysics Data System (ADS)

Ding, Ding; Xie, Youtao; Li, Kai; Huang, Liping; Zheng, Xuebin

2017-08-01

In order to improve the mechanical compatibility and cytocompatibility of titanium implants, a composite coating with double layers composed of tantalum and titanium was designed and prepared using plasma spraying technology. In the composite coating, the upper tantalum layer provides a good biocompatibility, and the sublayer of titanium with a porous structure ensures the low elastic modulus. Results show that the fabricated composite coating exhibits a relatively low elastic modulus of 26.7 GPa, which is close to the elastic modulus of human cortical bone. In vitro cytocompatibility evaluation of the composite coating shows that the human bone marrow stromal cells exhibit enhanced adhesion and spreading performance on the double-layered composite coating in comparison with the single-layered titanium coating. In order to eliminate the misgivings of chemical stability of the composite coating in clinical application, electrochemical corrosion of the coating was examined. The results obtained revealed a very weak galvanic corrosion between the tantalum and titanium in the composite coating, which would ensure the safety of the coating in vivo.

Quantitative Determination of L-DOPA in Seeds of Mucuna Pruriens Germplasm by High Performance Thin Layer Chromatography

PubMed Central

Raina, Archana P.; Khatri, Renu

2011-01-01

Mucuna pruriens Linn. is an important medicinal plant used for treatment of Parkinson's disease and many others in ancient Indian medical system. L-DOPA extracted from seeds of Mucuna is a constituent of more than 200 indigenous drug formulations and is more effective as drug than the synthetic counterpart. A densitometric high performance thin-layer chromatographic (HPTLC) method was developed for quantification of L-DOPA content present in the seeds extract. The method involves separation of L-DOPA on precoated silica gel 60 GF254 HPTLC plates using a solvent system of n-butanol-acetic-acid-water (4:1:1, v/v) as the mobile phase. Quantification was done at 280 nm using absorbance reflectance mode. Linearity was found in the concentration range of 100 to 1000 ng/spot with the correlation coefficient value of 0.9980. The method was validated for accuracy, precision and repeatability. Mean recovery was 100.89%. The LOD and LOQ for L-DOPA determination were found to be 3.41 ng/spot and 10.35 ng/spot respectively. The proposed HPTLC method was found to be precise, specific and accurate for quantitative determination of L-DOPA. It can be used for rapid screening of large germplasm collections of Mucuna pruriens for L-DOPA content. The method was used to study variation in fifteen accessions of Mucuna germplasm collected from different geographical regions. PMID:22707835

Quantitative Determination of L-DOPA in Seeds of Mucuna Pruriens Germplasm by High Performance Thin Layer Chromatography.

PubMed

Raina, Archana P; Khatri, Renu

2011-07-01

Mucuna pruriens Linn. is an important medicinal plant used for treatment of Parkinson's disease and many others in ancient Indian medical system. L-DOPA extracted from seeds of Mucuna is a constituent of more than 200 indigenous drug formulations and is more effective as drug than the synthetic counterpart. A densitometric high performance thin-layer chromatographic (HPTLC) method was developed for quantification of L-DOPA content present in the seeds extract. The method involves separation of L-DOPA on precoated silica gel 60 GF(254) HPTLC plates using a solvent system of n-butanol-acetic-acid-water (4:1:1, v/v) as the mobile phase. Quantification was done at 280 nm using absorbance reflectance mode. Linearity was found in the concentration range of 100 to 1000 ng/spot with the correlation coefficient value of 0.9980. The method was validated for accuracy, precision and repeatability. Mean recovery was 100.89%. The LOD and LOQ for L-DOPA determination were found to be 3.41 ng/spot and 10.35 ng/spot respectively. The proposed HPTLC method was found to be precise, specific and accurate for quantitative determination of L-DOPA. It can be used for rapid screening of large germplasm collections of Mucuna pruriens for L-DOPA content. The method was used to study variation in fifteen accessions of Mucuna germplasm collected from different geographical regions.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

NASA Astrophysics Data System (ADS)

Persano, A.; Quaranta, F.; Martucci, M. C.; Cretı, P.; Siciliano, P.; Cola, A.

2010-06-01

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm2 for E =1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

Barrier layer for a MCrAlY basecoat superalloy combination

DOEpatents

Sabol, Stephen M.; Goedjen, John G.; Vance, Steven J.

2001-01-01

A turbine component contains a substrate (22) such as a superalloy, a basecoat (24) of the type MCrAlY, and a continuous barrier layer (28) between the substrate and basecoat, where the barrier layer (28) is made of an alloy of (Re, Ta, Ru, Os)X, where X can be Ni, Co or their mixture, where the barrier layer is at least 2 micrometers thick and substantially prevents materials from both the basecoat and substrate from migrating through it.

Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography.

PubMed

Doshi, Gaurav Mahesh; Une, Hemant Devidas

2016-01-01

In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida.

Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography

PubMed Central

Doshi, Gaurav Mahesh; Une, Hemant Devidas

2016-01-01

Objective: In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. Materials and Methods: In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. Results: HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. Conclusion: The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. SUMMARY Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida PMID:26941534

Myxobacterium-Produced Antibiotic TA (Myxovirescin) Inhibits Type II Signal Peptidase

PubMed Central

Xiao, Yao; Gerth, Klaus; Müller, Rolf

2012-01-01

Antibiotic TA is a macrocyclic secondary metabolite produced by myxobacteria that has broad-spectrum bactericidal activity. The structure of TA is unique, and its molecular target is unknown. Here, we sought to elucidate TA's mode of action (MOA) through two parallel genetic approaches. First, chromosomal Escherichia coli TA-resistant mutants were isolated. One mutant that showed specific resistance toward TA was mapped and resulted from an IS4 insertion in the lpp gene, which encodes an abundant outer membrane (Braun's) lipoprotein. In a second approach, the comprehensive E. coli ASKA plasmid library was screened for overexpressing clones that conferred TAr. This effort resulted in the isolation of the lspA gene, which encodes the type II signal peptidase that cleaves signal sequences from prolipoproteins. In whole cells, TA was shown to inhibit Lpp prolipoprotein processing, similar to the known LspA inhibitor globomycin. Based on genetic evidence and prior globomycin studies, a block in Lpp expression or prevention of Lpp covalent cell wall attachment confers TAr by alleviating a toxic buildup of mislocalized pro-Lpp. Taken together, these data argue that LspA is the molecular target of TA. Strikingly, the giant ta biosynthetic gene cluster encodes two lspA paralogs that we hypothesize play a role in producer strain resistance. PMID:22232277

Structure of metal-oxide Ti-Ta-(Ti,Ta)xOy coatings during spark alloying and induction-thermal oxidation

NASA Astrophysics Data System (ADS)

Koshuro, V.; Fomin, A.; Fomina, M.; Rodionov, I.; Brzhozovskii, B.; Martynov, V.; Zakharevich, A.; Aman, A.; Oseev, A.; Majcherek, S.; Hirsch, S.

2016-08-01

The study focuses on combined spark alloying of titanium and titanium alloy surface and porous matrix structure oxidation. The metal-oxide coatings morphology is the result of melt drop transfer, heat treatment, and oxidation. The study establishes the influence of technological regimes of alloying and oxidation on morphological heterogeneity of metal- oxide system Ti-Ta-(Ti,Ta)xOy.

Wheat TaSP gene improves salt tolerance in transgenic Arabidopsis thaliana.

PubMed

Ma, Xiaoli; Cui, Weina; Liang, Wenji; Huang, Zhanjing

2015-12-01

A novel salt-induced gene with unknown functions was cloned through analysis of gene expression profile of a salt-tolerant wheat mutant RH8706-49 under salt stress. The gene was named Triticum aestivum salt-related protein (TaSP) and deposited in GenBank (Accession No. KF307326). Quantitative polymerase chain reaction (qPCR) results showed that TaSP expression was induced under salt, abscisic acid (ABA), and polyethylene glycol (PEG) stresses. Subcellular localization revealed that TaSP was mainly localized in cell membrane. Overexpression of TaSP in Arabidopsis could improve salt tolerance of 35S::TaSP transgenic Arabidopsis. 35S::TaSP transgenic Arabidopsis lines after salt stress presented better physiological indexes than the control group. In the non-invasive micro-test (NMT), an evident Na(+) excretion was observed at the root tip of salt-stressed 35S::TaSP transgenic Arabidopsis. TaSP promoter was cloned, and its beta-glucuronidase (GUS) activities before and after ABA, salt, cold, heat, and salicylic acid (SA) stresses were determined. Full-length TaSP promoter contained ABA and salt response elements. Copyright © 2015 Elsevier Masson SAS. All rights reserved.

The study of the modes of Ta-Zr powder mixture non-vacuum electron-beam cladding on the surface of the cp-titanium plates

NASA Astrophysics Data System (ADS)

Samoylenko, V. V.; Lozhkina, E. A.; Polyakov, I. A.; Lenivtseva, O. G.; Ivanchik, I. S.; Matts, O. E.

2016-11-01

The effect of the modes of non-vacuum electron-beam cladding of Ta-Zr powder mixtures on the structure and properties of the layers formed on the surface of cp-titanium were studied. The mode of the electron-beam alloying of titanium with zirconium and tantalum, which ensured the formation of a defect-free layer with a high content of alloying elements was selected. Metallographic examination indicated the presence of a dendritic- and plate-type structure of cladded layers. The microhardness of the layers, formed at the optimum mode, was not changed in the cross section and was equal to 450 HV.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

The role of annealing temperature variation on ZnO nanorods array deposited on TiO2 seed layer

NASA Astrophysics Data System (ADS)

Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

2018-05-01

Seed layer of Titanium dioxide (TiO2) by sol-gel spin coating technique were coated on glass substrate to grow Zinc oxide nanorods (ZNR) by solution-immersion method. The fabricated ZNR were annealed at various temperatures ranged from 400 to 600° C. FESEM images revealed that smaller ZNR were densely grown at optimum temperature of 450 and 500°C. Meanwhile, for all samples a dominant (0 0 2) diffraction peak of ZNR recorded by XRD patterns was at 34.4° which corresponding to hexagonal ZNR with a wurtzite structure. UV-Vis absorbance spectra showed the maximum absorption properties at UV region were detected at 450 and 500°C. The samples also showed high absorbance values at visible region.

77 FR 47671 - TA-W-81,520, T-Mobile USA, Inc., Call Center, Allentown, PA; TA-W-81,520G, T-Mobile USA, Inc...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-09

... DEPARTMENT OF LABOR Employment and Training Administration TA-W-81,520, T-Mobile USA, Inc., Call Center, Allentown, PA; TA- W-81,520G, T-Mobile USA, Inc., Headquarters Office, Bellevue, WA; Amended... of T-Mobile USA, Inc., Call Center, Allentown, Pennsylvania (TA-W-81,520), Fort Lauderdale, Florida...

On buffer layers as non-reflecting computational boundaries

NASA Technical Reports Server (NTRS)

Hayder, M. Ehtesham; Turkel, Eli L.

1996-01-01

We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

The MADS-box gene Agamous-like 11 is essential for seed morphogenesis in grapevine.

PubMed

Malabarba, Jaiana; Buffon, Vanessa; Mariath, Jorge E A; Gaeta, Marcos L; Dornelas, Marcelo C; Margis-Pinheiro, Márcia; Pasquali, Giancarlo; Revers, Luís F

2017-03-01

Despite the wide appreciation of seedless grapes, little is known about the molecular mechanisms that drive the stenospermocarpic seedless-type phenotype in grapevine. In order to address the molecular mechanisms that control seedlessness in grapevine, our study aimed to characterize VviAGL11, a class D MADS-box transcription factor gene that has been proposed as the major candidate gene involved in Vitis vinifera seed morphogenesis. VviAGL11 allelic variations in seeded and seedless grapevine cultivars were determined, and its correlations with allele-specific steady-state mRNA levels were investigated. VviAGL11 relative expression was significantly higher in seeds at 2, 4, and 6 weeks after fruit set, whereas in the seedless grape its transcript levels were extremely low in all stages analyzed. In situ hybridization revealed transcript accumulation specifically in the dual endotesta layer of the seeds, which is responsible for elongation and an increase of cell number, a necessary step to determine the lignification and the final seed size. No hybridization signals were visible in the seedless grapevine tissues, and a morphoanatomical analysis showed an apparent loss of identity of the endotesta layer of the seed traces. Ectopic expression of VviAGL11 in the Arabidopsis SEEDSTICK mutant background restored the wild-type phenotype and confirmed the direct role of VviAGL11 in seed morphogenesis, suggesting that depletion of its expression is responsible for the erroneous development of a highly essential seed layer, therefore culminating in the typical apirenic phenotype. © The Author 2017. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Love-Wave Biosensors Using Cross-Linked Polymer Waveguides on LiTaO{sub 3} Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

BENDER,FLORIAN; CERNOSEK,RICHARD W.; JOSSE,F.

The design and performance of Love-wave sensors using cross-linked poly-(methyl methacrylate) waveguides of thickness of 0.3--3.2 {micro}m on LiTaO{sub 3} substrates are described. It is found that this layer-substrate combination provides sufficient waveguidance, and electrical isolation of the IDTs from the liquid environment to achieve low acoustic loss and distortion. In bio-sensing experiments, mass sensitivity up to 1,420 Hz/(ng/mm{sup 2}) is demonstrated.

Influence of Ta doping in resistive switching behavior of TiO2

NASA Astrophysics Data System (ADS)

Barman, Arabinda; Saini, Chetan P.; Deshmukh, Sujit; Dhar, Sankar; Kanjilal, Aloke

An approach has been made to understand the resistive switching behavior in Ta-doped TiO2 films on Pt substrates. Prior to thin film deposition, Ta-doped TiO2 powder has been synthesized chemically using Ta and Ti precursor solutions. However, the Ta doping has seriously been affected by increasing Ta concentration above 1 at% due to the segregation of Ta2O5 phase. The Ta-doped TiO2 targets have been prepared for pulsed laser deposition of the films on Pt substrates using an excitation wavelength of 248 nm. The structural and chemical properties of the Ta-doped TiO2 films have been investigated in details with the help of XRD, SIMS, XAS and XPS. The stoichiometry of the Ta-doped TiO2 films with increasing depth has been verified initially by SIMS. The electrical study of the corresponding device structures further suggests that the optimized resistive switching effect can be accomplished up to a threshold Ta-doping of 1 at%. Nevertheless, a highly conducting behavior has been shown when the TiO2 films are doped with 2 at% Ta. These results will be discussed in details in the light of defect induced resistive switching phenomenon.

One-Seeded Fruits in the Core Caryophyllales: Their Origin and Structural Diversity

PubMed Central

Sukhorukov, Alexander P.; Mavrodiev, Evgeny V.; Struwig, Madeleen; Nilova, Maya V.; Dzhalilova, Khalima Kh.; Balandin, Sergey A.; Erst, Andrey; Krinitsyna, Anastasiya A.

2015-01-01

The core Caryophyllales consist of approximately 30 families (12 000 species) distributed worldwide. Many members evolved one-seeded or conjoined fruits, but their origin and structural diversity have not been investigated. A comparative anatomical investigation of the one-seeded fruits within the core Caryophyllales was conducted. The origin of the one-seeded fruits and the evolutionary reconstructions of some carpological characters were traced using a tree based on rbcl and matK data in order to understand the ancestral characters and their changes. The one-seeded fruit type is inferred to be an ancestral character state in core Caryophyllales, with a subsequent increase in the seed number seen in all major clades. Most representatives of the ‘Earlier Diverging’ clade are distinguished in various carpological traits. The organization of the pericarp is diverse in many groups, although fruits with a dry, many-layered pericarp, consisting of sclerenchyma as outer layers and a thin-walled parenchyma below, with seeds occupying a vertical embryo position, are likely ancestral character states in the core Caryophyllales clade. Several carpological peculiarities in fruit and seed structure were discovered in obligate one-seeded Achatocarpaceae, Chenopodiaceae, Nyctaginaceae, Seguieriaceae and Sarcobataceae. The horizontal embryo evolved in only certain groups of Chenopodiaceae. The bar-thickening of endotegmen cells appears to be an additional character typical of core Caryophyllales. The syncarpy-to-lysicarpy paradigm in Caryophyllaceae needs to be reinterpreted. PMID:25710481

Structure of the Developing Pea Seed Coat and the Post‐phloem Transport Pathway of Nutrients

PubMed Central

VAN DONGEN, JOOST T.; AMMERLAAN, ANKIE M. H.; WOUTERLOOD, MADELEINE; VAN AELST, ADRIAAN C.; BORSTLAP, ADRIANUS C.

2003-01-01

An important function of the seed coat is to deliver nutrients to the embryo. To relate this function to anatomical characteristics, the developing seed coat of pea (Pisum sativum L.) was examined by light‐ and cryo‐scanning electron microscopy (cryo‐SEM) from the late pre‐storage phase until the end of seed filling. During this time the apparently undifferentiated seed coat tissues evolve into the epidermal macrosclereids, the hypodermal hourglass cells, chlorenchyma, ground parenchyma and branched parenchyma. Using the fluorescent symplast tracer 8‐hydroxypyrene‐1,3,6‐trisulfonic acid, it could be demonstrated that solutes imported by the phloem move into the chlorenchyma and ground parenchyma, but not into the branched parenchyma. From a comparison with literature data of common bean (Phaseolus vulgaris L.) and broad bean (Vicia faba L.), it is concluded that in the three species different parenchyma layers, but not the branched parenchyma, may be involved in the post‐phloem symplasmic transport of nutrients in the seed coat. In pea, the branched parenchyma dies during the storage phase, and its cell wall remnants then form the boundary layer between the living seed coat parenchyma cells and the cotyledons. Using cryo‐SEM, clear images were obtained of this boundary layer which showed that many intracellular spaces in the seed coat parenchyma are filled with an aqueous solution. This is suggested to facilitate the diffusion of nutrients from the site of unloading towards the cotyledons. PMID:12714370

Defect reduction in seeded aluminum nitride crystal growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.

2017-04-18

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

2017-06-06

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Identification and Characterization of Arabidopsis Seed Coat Mucilage Proteins1[OPEN

PubMed Central

Tsai, Allen Yi-Lun; Kunieda, Tadashi; Rogalski, Jason; Foster, Leonard J.; Ellis, Brian E.

2017-01-01

Plant cell wall proteins are important regulators of cell wall architecture and function. However, because cell wall proteins are difficult to extract and analyze, they are generally poorly understood. Here, we describe the identification and characterization of proteins integral to the Arabidopsis (Arabidopsis thaliana) seed coat mucilage, a specialized layer of the extracellular matrix composed of plant cell wall carbohydrates that is used as a model for cell wall research. The proteins identified in mucilage include those previously identified by genetic analysis, and several mucilage proteins are reduced in mucilage-deficient mutant seeds, suggesting that these proteins are genuinely associated with the mucilage. Arabidopsis mucilage has both nonadherent and adherent layers. Both layers have similar protein profiles except for proteins involved in lipid metabolism, which are present exclusively in the adherent mucilage. The most abundant mucilage proteins include a family of proteins named TESTA ABUNDANT1 (TBA1) to TBA3; a less abundant fourth homolog was named TBA-LIKE (TBAL). TBA and TBAL transcripts and promoter activities were detected in developing seed coats, and their expression requires seed coat differentiation regulators. TBA proteins are secreted to the mucilage pocket during differentiation. Although reverse genetics failed to identify a function for TBAs/TBAL, the TBA promoters are highly expressed and cell type specific and so should be very useful tools for targeting proteins to the seed coat epidermis. Altogether, these results highlight the mucilage proteome as a model for cell walls in general, as it shares similarities with other cell wall proteomes while also containing mucilage-specific features. PMID:28003327

Low temperature growth of ZnO nanorods array via solution-immersion on TiO2 seed layer

NASA Astrophysics Data System (ADS)

Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

2018-05-01

In this work, TiO2:ZNR thin films were successfully fabricated on glass substrates at low temperatures of 75 to 90°C. The substrates were coated with titanium dioxide (TiO2) using sol-gel spin coating, which act as seed layer to grow zinc oxide nanorods (ZNR) by solution-immersion method. At 90 and 95° C, ZNR with hexagonal tip are well dispersed without any aggregation and exhibit more uniform nanorods array as observed using FESEM. The diffraction peak intensity of the (0 0 2)-plane increased as the temperature increased, indicating improved orientation in the c-axis direction of the ZNR as detected in XRD patterns. From UV-Vis absorbance spectra, it was found that the samples has higher absorption properties at middle range of immersion temperatures; 80, 85 and 90°C.

Influence of the Testa on Seed Dormancy, Germination, and Longevity in Arabidopsis1

PubMed Central

Debeaujon, Isabelle; Léon-Kloosterziel, Karen M.; Koornneef, Maarten

2000-01-01

The testa of higher plant seeds protects the embryo against adverse environmental conditions. Its role is assumed mainly by controlling germination through dormancy imposition and by limiting the detrimental activity of physical and biological agents during seed storage. To analyze the function of the testa in the model plant Arabidopsis, we compared mutants affected in testa pigmentation and/or structure for dormancy, germination, and storability. The seeds of most mutants exhibited reduced dormancy. Moreover, unlike wild-type testas, mutant testas were permeable to tetrazolium salts. These altered dormancy and tetrazolium uptake properties were related to defects in the pigmentation of the endothelium and its neighboring crushed parenchymatic layers, as determined by vanillin staining and microscopic observations. Structural aberrations such as missing layers or a modified epidermal layer in specific mutants also affected dormancy levels and permeability to tetrazolium. Both structural and pigmentation mutants deteriorated faster than the wild types during natural aging at room temperature, with structural mutants being the most strongly affected. PMID:10677433

Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

NASA Astrophysics Data System (ADS)

Ji, F.; Xu, J. P.; Liu, J. G.; Li, C. X.; Lai, P. T.

2011-05-01

TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors with high-k TaTiO gate dielectric fabricated simply by alternate sputtering of Ta and Ti. Also, postdeposition annealing is performed in wet N2 to suppress the growth of unstable GeOx at the Ge surface. As a result, excellent electrical properties of the Ge MOS devices are demonstrated, such as high equivalent dielectric constant (22.1), low interface-state density (7.3×1011 cm-2 eV), small gate leakage current (8.6×10-4 A cm-2 at Vg-Vfb=1 V), and high device reliability. Transmission electron microscopy and x-ray photoelectron spectroscopy support that all these should be attributed to the fact that the nitrogen barrier in the TaON interlayer can effectively block the interdiffusions of Ge and Ta, and the wet-N2 anneal can significantly suppress the growth of unstable low-k GeOx.

The gradient structure of the NiTi surface layers subjected to tantalum ion beam alloying

NASA Astrophysics Data System (ADS)

Girsova, S. L.; Poletika, T. M.; Meisner, L. L.; Schmidt, E. Yu

2017-05-01

The NiTi shape memory alloy has been modified by ion implantation with Ta to improve the surface and biological properties. The elemental and phase composition and structure of the surface and near-surface layers of NiTi specimens after the Ta ion implantation with the fluency D = 3 × 1017 cm-2 and D = 6 × 1017 cm-2 are examined. The methods of Auger electron spectroscopy (AES), transmission electron microscopy (TEM), and electron dispersion analysis (EDS) are used. It is found that a nonuniform distribution of elements along the depth of the surface layer after the ion implantation of NiTi specimens, regardless of the regime, is accompanied by the formation of a number of sublayer structures.

Improved conversion efficiency in dye-sensitized solar cells based on electrospun Al-doped ZnO nanofiber electrodes prepared by seed layer treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun Sining, E-mail: alexsyun1974@yahoo.com.c; Lim, Sangwoo

2011-02-15

The application of electrospun nanofibers in electronic devices is limited due to their poor adhesion to conductive substrates. To improve this, a seed layer (SD) is introduced on the FTO substrate before the deposition of the electrospun composite nanofibers. This facilitates the release of interfacial tensile stress during calcination and enhances the interfacial adhesion of the AZO nanofiber films with the FTO substrate. Dye-sensitized solar cells (DSSC) based on these AZO nanofiber photoelectrodes have been fabricated and investigated. An energy conversion efficiency ({eta}) of 0.54-0.55% has been obtained under irradiation of AM 1.5 simulated sunlight (100 mW/cm{sup 2}), indicating amore » massive improvement of {eta} in the AZO nanofiber film DSSCs after SD-treatment of the FTO substrate as compared to those with no treatment. The SD-treatment has been demonstrated to be a simple and facile method to solve the problem of poor adhesion between electrospun nanofibers and the conductive substrate. -- Graphical abstract: The poor adhesion between electrospun nanofibers and substrate is improved by a simple and facile seed layer (SD) treatment. The energy conversion efficiency of AZO nanofiber-based DSSCs has been greatly increased by SD-treatment of the FTO substrate. Display Omitted Research highlights: {yields} A simple and facile method (SD-treatment) has been demonstrated. {yields} The poor adhesion between electrospun nanofibers and substrate is improved by the SD-treatment. {yields} The {eta} of AZO nanofiber-based DSSCs has been greatly improved by SD-treatment of the FTO substrate.« less

Efficient Visible-Light-Driven Z-Scheme Overall Water Splitting Using a MgTa2O(6-x)N(y)/TaON Heterostructure Photocatalyst for H2 Evolution.

PubMed

Chen, Shanshan; Qi, Yu; Hisatomi, Takashi; Ding, Qian; Asai, Tomohiro; Li, Zheng; Ma, Su Su Khine; Zhang, Fuxiang; Domen, Kazunari; Li, Can

2015-07-13

An (oxy)nitride-based heterostructure for powdered Z-scheme overall water splitting is presented. Compared with the single MgTa2O(6-x)N(y) or TaON photocatalyst, a MgTa2O(6-x)N(y)/TaON heterostructure fabricated by a simple one-pot nitridation route was demonstrated to effectively suppress the recombination of carriers by efficient spatial charge separation and decreased defect density. By employing Pt-loaded MgTa2O(6-x)N(y)/TaON as a H2-evolving photocatalyst, a Z-scheme overall water splitting system with an apparent quantum efficiency (AQE) of 6.8% at 420 nm was constructed (PtO(x)-WO3 and IO3(-)/I(-) pairs were used as an O2-evolving photocatalyst and a redox mediator, respectively), the activity of which is circa 7 or 360 times of that using Pt-TaON or Pt-MgTa2O(6-x)N)y) as a H2-evolving photocatalyst, respectively. To the best of our knowledge, this is the highest AQE among the powdered Z-scheme overall water splitting systems ever reported. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surgical option for the correction of Peyronie's disease: an autologous tissue-engineered endothelialized graft.

PubMed

Imbeault, Annie; Bernard, Geneviève; Ouellet, Gabrielle; Bouhout, Sara; Carrier, Serge; Bolduc, Stéphane

2011-11-01

Surgical treatment is indicated in severe cases of Peyronie's disease. Incision of the plaque with subsequent graft material implantation is the option of choice. Ideal graft tissue is not yet available. To evaluate the use of an autologous tissue-engineered endothelialized graft by the self-assembly method, for tunica albuginea (TA) reconstruction in Peyronie's disease. Two TA models were created. Human fibroblasts were isolated from a skin biopsy and cultured in vitro until formation of fibroblast sheets. After 4 weeks of maturation, human umbilical vein endothelial cells (HUVEC) were seeded on fibroblasts sheets and wrapped around a tubular support to form a cylinder of about 10 layers. After 21 days of tube maturation, HUVEC were seeded into the lumen of the fibroblast tubes for the endothelialized tunica albuginea (ETA). No HUVEC were seeded into the lumen for the TA model. Both constructs were placed under perfusion in a bioreactor for 1 week. Histology, immunohistochemistry, and burst pressure were performed to characterize mature tubular graft. Animal manipulations were also performed to demonstrate the impact of endothelial cells in vivo. Histology showed uniform multilayered fibroblasts. Extracellular matrix, produced entirely by fibroblasts, presented a good staining for collagen 1. Some elastin fibers were also present. For the TA model, anti-human von Willebrand antibody revealed the endothelial cells forming capillary-like structures. TA model reached a burst pressure of 584 mm Hg and ETA model obtained a burst pressure of 719 mm Hg. This tissue-engineered endothelialized tubular graft is structurally similar to normal TA and presents an adequate mechanical resistance. The self-assembly method used and the autologous property of this model could represent an advantage comparatively to other available grafts. Further evaluation including functional testing will be necessary to characterize in vivo implantation and behavior of the graft. © 2011

Electron Scattering at Surfaces of Epitaxial Metal Layers

NASA Astrophysics Data System (ADS)

Chawla, Jasmeet Singh

In the field of electron transport in metal films and wires, the 'size effect' refers to the increase in the resistivity of the films and wires as their critical dimensions (thickness of film, width and height of wires) approach or become less than the electron mean free path lambda, which is, for example, 39 nm for bulk copper at room temperature. This size-effect is currently of great concern to the semiconductor industry because the continued downscaling of feature sizes has already lead to Cu interconnect wires in this size effect regime, with a reported 2.5 times higher resistivity for 40 nm wide Cu wires than for bulk Cu. Silver is a possible alternate material for interconnect wires and titanium nitride is proposed as a gate metal in novel field-effect-transistors. Therefore, it is important to develop an understanding of how the growth, the surface morphology, and the microstructure of ultrathin (few nanometers) Cu, Ag and TiN layers affect their electrical properties. This dissertation aims to advance the scientific knowledge of electron scattering at surfaces (external surfaces and grain boundaries), that are, the primary reasons for the size-effect in metal conductors. The effect of surface and grain boundary scattering on the resistivity of Cu thin films and nanowires is separately quantified using (i) in situ transport measurements on single-crystal, atomically smooth Cu(001) layers, (ii) textured polycrystalline Cu(111) layers and patterned wires with independently varying grain size, thickness and line width, and (iii) in situ grown interfaces including Cu-Ta, Cu-MgO, Cu-vacuum and Cu-oxygen. In addition, the electron surface scattering is also measured in situ for single-crystal Ag(001), (111) twinned epitaxial Ag(001), and single-crystal TiN(001) layers. Cu(001), Ag(001), and TiN(001) layers with a minimum continuous thickness of 4, 3.5 and 1.8 nm, respectively, are grown by ultra-high vacuum magnetron sputter deposition on MgO(001) substrates with

Visible Light Assisted Photocatalytic Hydrogen Generation by Ta 2O 5/Bi 2O 3, TaON/Bi 2O 3, and Ta 3N 5/Bi 2O 3 Composites

DOE PAGES

Adhikari, Shiba; Hood, Zachary D.; More, Karren Leslie; ...

2015-06-15

Composites comprised of two semiconducting materials with suitable band gaps and band positions have been reported to be effective at enhancing photocatalytic activity in the visible light region of the electromagnetic spectrum. Here, we report the synthesis, complete structural and physical characterizations, and photocatalytic performance of a series of semiconducting oxide composites. UV light active tantalum oxide (Ta2O5) and visible light active tantalum oxynitride (TaON) and tantalum nitride (Ta 3N 5) were synthesized, and their composites with Bi 2O 3 were prepared in situ using benzyl alcohol as solvent. The composite prepared using equimolar amounts of Bi 2O 3 andmore » Ta 2O 5 leads to the formation of the ternary oxide, bismuth tantalate (BiTaO 4) upon calcination at 1000 °C. The composites and single phase bismuth tantalate formed were characterized by powder X-ray diffraction (PXRD), thermogravimetric analysis (TGA), Brunauer–Emmett–Teller (BET) surface area measurement, scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV–Vis diffuse reflectance spectroscopy, and photoluminescence. The photocatalytic activities of the catalysts were evaluated for generation of hydrogen using aqueous methanol solution under visible light irradiation (λ ≥ 420 nm). The results show that as-prepared composite photocatalysts extend the light absorption range and restrict photogenerated charge-carrier recombination, resulting in enhanced photocatalytic activity compared to individual phases. The mechanism for the enhanced photocatalytic activity for the heterostructured composites is elucidated based on observed activity, band positions calculations, and photoluminescence data.« less

Developing tTA Transgenic Rats for Inducible and Reversible Gene Expression

PubMed Central

Zhou, Hongxia; Huang, Cao; Yang, Min; Landel, Carlisle P; Xia, Pedro Yuxing; Liu, Yong-Jian; Xia, Xu Gang

2009-01-01

To develop transgenic lines for conditional expression of desired genes in rats, we generated several lines of the transgenic rats carrying the tetracycline-controlled transactivator (tTA) gene. Using a vigorous, ubiquitous promoter to drive the tTA transgene, we obtained widespread expression of tTA in various tissues. Expression of tTA was sufficient to strongly activate its reporter gene, but was below the toxicity threshold. We examined the dynamics of Doxycycline (Dox)-regulated gene expression in transgenic rats. In the two transmittable lines, tTA-mediated activation of the reporter gene was fully subject to regulation by Dox. Dox dose-dependently suppressed tTA-activated gene expression. The washout time for the effects of Dox was dose-dependent. We tested a complex regime of Dox administration to determine the optimal effectiveness and washout duration. Dox was administered at a high dose (500 μg/ml in drinking water) for two days to reach the effective concentration, and then was given at a low dose (20 μg/ml) to maintain effectiveness. This regimen of Dox administration can achieve a quick switch between ON and OFF statuses of tTA-activated gene expression. In addition, administration of Dox to pregnant rats fully suppressed postnatal tTA-activated gene expression in their offspring. Sufficient levels of Dox are present in mother's milk to produce maximal efficacy in nursing neonates. Administration of Dox to pregnant or nursing rats can provide a continual suppression of tTA-dependent gene expression during embryonic and postnatal development. The tTA transgenic rat allows for inducible and reversible gene expression in the rat; this important tool will be valuable in the development of genetic rat models of human diseases. PMID:19214245

Germination, growth rates, and electron microscope analysis of tomato seeds flown on the LDEF

NASA Technical Reports Server (NTRS)

Hammond, Ernest C., Jr.; Bridgers, Kevin; Brown, Cecelia Wright

1995-01-01

The tomato seeds were flown in orbit aboard the Long Duration Exposure Facility (LDEF) for nearly six years. During this time, the tomato seeds received an abundant exposure to cosmic radiation and solar wind. Upon the return of the LDEF to earth, the seeds were distributed throughout the United States and 30 foreign countries for analysis. The purpose of the experiment was to determine the long term effect of cosmic rays on living tissue. Our university analysis included germination and growth rates as well as Scanning Electron Microscopy and X-ray analysis of the control as well as Space-exposed tomato seeds. In analyzing the seeds under the Electron Microscope, usual observations were performed on the nutritional and epidermis layer of the seed. These layers appeared to be more porous in the Space-exposed seeds than on the Earth-based control seeds. This unusual characteristic may explain the increases in the space seeds growth pattern. (Several test results show that the Space-exposed seeds germinate sooner than the Earth-Based seeds. Also, the Space-exposed seeds grew at a faster rate). The porous nutritional region may allow the seeds to receive necessary nutrients and liquids more readily, thus enabling the plant to grow at a faster rate. Roots, leaves and stems were cut into small sections and mounted. After sputter coating the specimens with Argon/Gold Palladium Plasma, they were ready to be viewed under the Electron Microscope. Many micrographs were taken. The X-ray analysis displayed possible identifications of calcium, potassium, chlorine, copper, aluminum, silicon, phosphate, carbon, and sometimes sulfur and iron. The highest concentrations were shown in potassium and calcium. The Space-exposed specimens displayed a high concentration of copper and calcium in the two specimens. There was a significantly high concentration of copper in the Earth-based specimens, whereas there was no copper in the Space-exposed specimens.

New ternary tantalum borides containing boron dumbbells: Experimental and theoretical studies of Ta2OsB2 and TaRuB

NASA Astrophysics Data System (ADS)

Mbarki, Mohammed; Touzani, Rachid St.; Rehorn, Christian W. G.; Gladisch, Fabian C.; Fokwa, Boniface P. T.

2016-10-01

The new ternary transition metal-rich borides Ta2OsB2 and TaRuB have been successfully synthesized by arc-melting the elements in a water-cooled crucible under an argon atmosphere. The crystal structures of both compounds were solved by single-crystal X-ray diffraction and their metal compositions were confirmed by EDX analysis. It was found that Ta2OsB2 and TaRuB crystallize in the tetragonal Nb2OsB2 (space group P4/mnc, no. 128) and the orthorhombic NbRuB (space group Pmma, no. 51) structure types with lattice parameters a=5.878(2) Å, c=6.857(2) Å and a=10.806(2) Å, b=3.196(1) Å, c=6.312(2) Å, respectively. Furthermore, crystallographic, electronic and bonding characteristics have been studied by density functional theory (DFT). Electronic structure relaxation has confirmed the crystallographic parameters while COHP bonding analysis indicates that B2-dummbells are the strongest bonds in both compounds. Moreover, the formation of osmium dumbbells in Ta2OsB2 through a Peierls distortion along the c-axis, is found to be the origin of superstructure formation. Magnetic susceptibility measurements reveal that the two phases are Pauli paramagnets, thus confirming the theoretical DOS prediction of metallic character. Also hints of superconductivity are found in the two phases, however lack of single phase samples has prevented confirmation. Furthermore, the thermodynamic stability of the two modifications of AMB (A=Nb, Ta; M =Ru, Os) are studied using DFT, as new possible phases containing either B4- or B2-units are predicted, the former being the most thermodynamically stable modification.

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co 2FeAl electrodes

NASA Astrophysics Data System (ADS)

Zhang, D. L.; Xu, X. G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-03-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2FeAl/NOL 1/Co 2FeAl/Cu/Co 2FeAl/NOL 2/Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2FeAl (CFA) PSV with a structure of Ta/Co 2FeAl/Cu/Co 2FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2O 3)(Al 2O 3)] in NOL 1 and [(Fe 2O 3)(Al 2O 3)(Ta 2O 5)] in NOL 2. Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure.

Fabrication of silicon films from patterned protruded seeds

NASA Astrophysics Data System (ADS)

Zeng, Huang; Zhang, Wei; Li, Jizhou; Wang, Cong; Yang, Hui; Chen, Yigang; Chen, Xiaoyuan; Liu, Dongfang

2017-05-01

Thin, flexible silicon crystals are starting up applications such as light-weighted flexible solar cells, SOI, flexible IC chips, 3D ICs imagers and 3D CMOS imagers on the demand of high performance with low cost. Kerfless wafering technology by direct conversion of source gases into mono-crystalline wafers on reusable substrates is highly cost-effective and feedstock-effective route to cheap wafers with the thickness down to several microns. Here we show a prototype for direct conversion of silicon source gases to wafers by using the substrate with protruded seeds. A reliable and controllable method of wafer-scaled preparation of protruded seed patterns has been developed by filling liquid wax into a rod array as the mask for the selective removal of oxide layer on the rod head. Selectively epitaxial growth is performed on the protruded seeds, and the voidless film is formed by the merging of neighboring seeds through growing. And structured hollows are formed between the grown film and the substrate, which would offer the transferability of the grown film and the reusability of the protruded seeds.

Paths of water entry and structures involved in the breaking of seed dormancy of Lupinus.

PubMed

Robles-Díaz, Erika; Flores, Joel; Yáñez-Espinosa, Laura

2016-03-15

Physical dormancy is the water impermeability of the seed coat caused by one or more palisade cell layer(s) called macrosclereids. The specialised structure for water entry sites is the water gap, which serves as a detector of environmental cues for germination. In Fabaceae, the water gap is the lens, although another seed structure for water entry could exist. In this study, we identified the initial site of water entry, observed the hydration of a cushion-like structure near the radicle, described the anatomy of the water gap, and analysed the association of anatomical seed traits with the initial site of water entry and the imbibition velocity of six species of Lupinus from the state of Jalisco, Mexico. Dye tracking with a toluidine blue solution was used to identify the initial site of water entry. The anatomical description was performed using conventional microtechnique and a light microscope. The entry of the toluidine solution into seeds of L. montanus was observed after 6h, followed by L. exaltatus and L. mexicanus after 18h and L. elegans, L. reflexus and L. rotundiflorus after 48h. The site of water entry was the lens in L. elegans, L. exaltatus, L. reflexus and L. rotundiflorus and the micropyle in L. mexicanus and L. montanus. The cushion-like structure was responsible for water accumulation in embryo imbibition. Significant differences among anatomical seed traits such as thickness in the hilar region, the counter-palisade layer, cushion-like structure, epidermis, hypodermis, and innermost parenchyma layer were found among the species. Copyright © 2016 Elsevier GmbH. All rights reserved.

Co-precipitation of tobramycin into biomimetically coated orthopedic fixation pins employing submicron-thin seed layers of hydroxyapatite.

PubMed

Sörensen, Jan H; Lilja, Mirjam; Åstrand, Maria; Sörensen, Torben C; Procter, Philip; Strømme, Maria; Steckel, Hartwig

2014-01-01

The migration, loosening and cut-out of implants and nosocomial infections are current problems associated with implant surgery. New innovative strategies to overcome these issues are emphasized in today's research. The current work presents a novel strategy involving co-precipitation of tobramycin with biomimetic hydroxyapatite (HA) formation to produce implant coatings that control local drug delivery to prevent early bacterial colonization of the implant. A submicron- thin HA layer served as seed layer for the co-precipitation process and allowed for incorporation of tobramycin in the coating from a stock solution of antibiotic concentrations as high as 20 mg/ml. Concentrations from 0.5 to 20 mg/ml tobramycin and process temperatures of 37 °C and 60 °C were tested to assess the optimal parameters for a thin tobramycin- delivering HA coating on discs and orthopedic fixation pins. The morphology and thickness of the coating and the drug-release profile were evaluated via scanning electron microscopy and high performance liquid chromatography. The coatings delivered pharmaceutically relevant amounts of tobramycin over a period of 12 days. To the best of our knowledge, this is the longest release period ever observed for a fast-loaded biomimetic implant coating. The presented approach could form the foundation for development of combination device/antibiotic delivery vehicles tailored to meet well-defined clinical needs while combating infections and ensuring fast implant in-growth.

Survival of nature's rarest isotope {sup 180}Ta under stellar conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohr, P.; Kaeppeler, F.; Gallino, R.

2007-01-15

The nucleosynthesis of nature's rarest isotope {sup 180}Ta depends sensitively on the temperature of the astrophysical environment because of depopulation of the long-living isomeric state via intermediate states to the short-living ground state by thermal photons. Reaction rates for this transition have been measured in the laboratory. These ground state rates underestimate the stellar rates dramatically because under stellar conditions intermediate states are mainly populated by excitations from thermally excited states in {sup 180m}Ta. Full thermalization of {sup 180}Ta is already achieved for typical s-process temperatures around kT=25 keV. Consequently, for the survival of {sup 180}Ta in the s-process fastmore » convective mixing is required which has to transport freshly synthesized {sup 180}Ta to cooler regions. In supernova explosions {sup 180}Ta is synthesized by photon- or neutrino-induced reactions at temperatures above T{sub 9}=1 in thermal equilibrium; independent of the production mechanism, freeze-out from thermal equilibrium occurs at kT{approx_equal}40 keV, and only 35{+-}4% of the synthesized {sup 180}Ta survive in the isomeric state.« less

The oxidation of TaBe sub 12 and NbBe sub 12 coatings on niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Courtright, E.L.

1990-01-01

The oxidation behavior of tantalum and niobium beryllide coatings on niobium were evaluated. Intermetallic bond layers consisting of Ir{sub 3}Ta and Ir{sub 3}Nb were used to butter the large thermal expansion mismatch between the beryllide coatings and underlying niobium substrate. All coatings were applied by Triode Sputtering except for a final environmental protection layer of stabilized zirconia deposited by RF Diode using a ceramic target. Severe delamination and spalling occurred during cyclic oxidation exposure, even at temperatures as low as 925{degrees}C, indicating that the bond layer did not prevent the differential expansion stresses from reaching the delamination failure threshold, particularlymore » at the edges and corners. Hot pressed samples of the two beryllide compounds were also exposed to a similar cyclic oxidation history, but, in contrast to the coatings, exhibited excellent oxidation resistance to temperatures as high as 1370{degrees}C. 9 refs., 8 figs., 1 tab.« less

Vibrational properties of TaW alloy using modified embedded atom method potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chand, Manesh, E-mail: maneshchand@gmail.com; Uniyal, Shweta; Joshi, Subodh

2016-05-06

Force-constants up to second neighbours of pure transition metal Ta and TaW alloy are determined using the modified embedded atom method (MEAM) potential. The obtained force-constants are used to calculate the phonon dispersion of pure Ta and TaW alloy. As a further application of MEAM potential, the force-constants are used to calculate the local vibrational density of states and mean square thermal displacements of pure Ta and W impurity atoms with Green’s function method. The calculated results are found to be in agreement with the experimental measurements.

The oxygen requirement of germinating flax seeds

NASA Astrophysics Data System (ADS)

Kuznetsov, O.; Hasenstein, K.

Experiments for earth orbit are typically prepared on the ground and often germinated in orbit in order to study gravity effects on developing seedlings. Germination requires the breakdown of storage compounds and respiration. In orbit the formation of a water layer around the seed may further limit oxygen availability. Therefore, the oxygen content of the available gas volume is one of the limiting factors for seed germination. In preparation for an upcoming shuttle experiment (MICRO on STS-107) we studied germination and growth of flax (Linum usitatissimum L.) seedlings in the developed hardware. We tested per seed chamber (gas volume = 14 mL, O2 = 2.9 mL) between 4 to 32 seeds glued to germination paper by 1% (w/v) gum guar. A lexan cover and a gasket hermetically sealed each of the eight chambers. For imbibition of the seeds a previously optimized amount of distilled water was dispensed through sealed inlets. The seedlings were allowed to grow for either 32 to 48 h on a clinostat or without microgravity simulation. Then their root length was measured. With 32 seeds per chamber, four times the intended number of seeds for the flight, the germination rate decreased from 94 to 69%, and the root length was reduced by 20%. Experiments on the germination and root length in controlled atmospheres (5, 10, 15 and 21% O2 ) suggest that germination and growth for two days requires about 200 :l of O (1 mL air) per seed. Our2 experiments correlate oxygen dependency from seed mass and germination temperature, and analyze accumulation of gaseous metabolites (supported by NASA grant NAG10-0190).

Using the TA to Prepare Graduate Students for Research and Employment

NASA Astrophysics Data System (ADS)

Heller, Kenneth

One of the most underused components of the physics graduate program is the time spent being a teaching assistant (TA). Often the TA duties consist of grading and trying to help undergraduates survive a physics course. How those duties are accomplished is left to each TA. The most common TA preparation, if it exists, has a narrow focus on the class being taught. Preparation consists of describing, or perhaps practicing, specific teaching skills and gaining familiarity with the equipment used in the laboratory portion of the class. Instead TAs can be integrated into the entire course in which they function so that they learn the course as a system. This means treating a course in the same way one approaches a research project with the TAs as members of the research team headed by a faculty advisor. TA preparation is broadened and support includes the management, teamwork, and communication skills necessary. This makes the TAs more efficient and effective teachers while explicitly connecting the TA experience to the ``soft'' skills they need in their own research careers whether in industry, national laboratories, or academia. This talk describes such a program, functioning for over 20 years at the University of Minnesota, that takes no more time than the usual TA but results in graduate students that are more satisfied with their TA experience, are better prepared to function in research groups, and provide a better classroom experience for their undergraduate students.

Tribological properties of amorphous hydrogenated (a-C:H) and hydrogen-free tetrahedral (ta-C) diamond-like carbon coatings under jatropha biodegradable lubricating oil at different temperatures

NASA Astrophysics Data System (ADS)

Mobarak, H. M.; Masjuki, H. H.; Mohamad, E. Niza; Kalam, M. A.; Rashedul, H. K.; Rashed, M. M.; Habibullah, M.

2014-10-01

The application of diamond-like carbon (DLC) coatings on automotive components is emerging as a favorable strategy to address the recent challenges in the industry. DLC coatings can effectively lower the coefficient of friction (CoF) and wear rate of engine components, thereby improving their fuel efficiency and durability. The lubrication of ferrous materials can be enhanced by a large amount of unsaturated and polar components of oils. Therefore, the interaction between nonferrous coatings (e.g., DLC) and vegetable oil should be investigated. A ball-on-plate tribotester was used to run the experiments. Stainless steel plates coated with amorphous hydrogenated (a-C:H) DLC and hydrogen-free tetrahedral (ta-C) DLC that slide against 440C stainless steel ball were used to create a ball-on-plate tribotester. The wear track was investigated through scanning electron microscopy. Energy dispersive and X-ray photoelectron spectroscopies were used to analyze the tribofilm inside the wear track. Raman analysis was performed to investigate the structural changes in the coatings. At high temperatures, the CoF in both coatings decreased. The wear rate, however, increased in the a-C:H but decreased in the ta-C DLC-coated plates. The CoF and the wear rate (coated layer and counter surface) were primarily influenced by the graphitization of the coating. Tribochemical films, such as polyphosphate glass, were formed in ta-C and acted as protective layers. Therefore, the wear rate of the ta-C DLC was lower than that of the-C:H DLC.

Atomic layer deposited high-k nanolaminate capacitors

NASA Astrophysics Data System (ADS)

Smith, S. W.; McAuliffe, K. G.; Conley, J. F., Jr.

2010-10-01

Al 2O 3-Ta 2O 5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al 2O 3/Ta 2O 5 bilayers. The composition of the films was roughly 57% Al 2O 3 and 43% Ta 2O 5 and the total film thickness was held at ˜58 nm, while the number of bilayers was varied from 3 to 192 by changing the target bilayer thickness from ˜19.2 nm to ˜0.3 nm. Varying the number of bilayers was found to impact electrical properties. Although, almost all laminate films exhibited leakage, breakdown, hysteresis, and overall dielectric constant intermediate between pure Al 2O 3 and Ta 2O 5 films, laminates with few bilayers exhibited leakage current density lower than Al 2O 3 over the range of ˜3.5-4.5 MV/cm. Select samples annealed at temperatures from 400 to 900 °C were compared with as-deposited laminates. Annealing the laminate films at low temperatures improved leakage and breakdown while higher temperature anneals degraded both leakage and breakdown but improved the effective dielectric constant. A figure of merit was used to evaluate the overall ability of the various films to store charge. It was found that the few bilayer laminates were ranked higher than the many bilayer laminates as well as above both the pure Ta 2O 5 and pure Al 2O 3 films. These results indicate that even for a fixed overall composition, the electrical properties of a nanolaminate can be adjusted by varying the number of bilayers.

Low-Frequency Raman Modes of 2H-TaSe2 in the Charge Density Wave Phase

NASA Astrophysics Data System (ADS)

Chowdhury, Sugata; Simpson, J.; Einstein, T. L.; Hight Walker, A. R.; Theoretical Collaboration

With changes in temperatures, tantalum diselenide (2H-TaSe2) , a layered, transition metal chalcogenides (TMD) exhibits unique super-lattice structures. The metallic ground state changes to an incommensurate charge density wave (CDW) state at 122?K followed by a commensurate CDW state at 90?K, and eventually a superconducting state 0.14 K. These phase transitions are driven by strong electron-phonon coupling and favored by the particular form of the Fermi surface of these systems. Here we theoretically studied the structural origin of low-frequency Raman modes of bulk 2H-TaSe2\\ in the CDW phases. Our calculations reveal that changes observed in the Raman modes are associated with the thermal expansion in the basal plane of 2H-TaSe2. The Grüneisen parameters of these two Raman modes increase in the CDW phases. Changes in the lattice parameter ``a'' are large compared to ``c'' which induces strain along the a-axis. We compared our results with experimental data which show low-frequency Raman phonon modes are very sensitive to temperature and are not observed in the metallic room-temperature state. In addition, we found that cation displacement is more than anion in CDW phase. Our results may shed more light on exact nature of the CDW instability and optical properties in this system.

Magnetism in structures with ferromagnetic and superconducting layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhaketov, V. D.; Nikitenko, Yu. V., E-mail: nikiten@nf.jinr.ru; Radu, F.

2017-01-15

The influence of superconductivity on ferromagnetism in the layered Ta/V/Fe{sub 1–x}V{sub x}/V/Fe{sub 1–x}V{sub x}/Nb/Si structures consisting of ferromagnetic and superconducting layers is studied using polarized neutron reflection and scattering. It is experimentally shown that magnetic structures with linear sizes from 5 nm to 30 μm are formed in these layered structures at low temperatures. The magnetization of the magnetic structures is suppressed by superconductivity at temperatures below the superconducting transition temperatures in the V and Nb layers. The magnetic states of the structures are shown to undergo relaxation over a wide magnetic-field range, which is caused by changes in themore » states of clusters, domains, and Abrikosov vortices.« less

TaER Expression Is Associated with Transpiration Efficiency Traits and Yield in Bread Wheat

PubMed Central

Zheng, Jiacheng; Yang, Zhiyuan; Madgwick, Pippa J.; Carmo-Silva, Elizabete; Parry, Martin A. J.; Hu, Yin-Gang

2015-01-01

ERECTA encodes a receptor-like kinase and is proposed as a candidate for determining transpiration efficiency of plants. Two genes homologous to ERECTA in Arabidopsis were identified on chromosomes 6 (TaER2) and 7 (TaER1) of bread wheat (Triticum aestivum L.), with copies of each gene on the A, B and D genomes of wheat. Similar expression patterns were observed for TaER1 and TaER2 with relatively higher expression of TaER1 in flag leaves of wheat at heading (Z55) and grain-filling (Z73) stages. Significant variations were found in the expression levels of both TaER1 and TaER2 in the flag leaves at both growth stages among 48 diverse bread wheat varieties. Based on the expression of TaER1 and TaER2, the 48 wheat varieties could be classified into three groups having high (5 varieties), medium (27 varieties) and low (16 varieties) levels of TaER expression. Significant differences were also observed between the three groups varying for TaER expression for several transpiration efficiency (TE)- related traits, including stomatal density (SD), transpiration rate, photosynthetic rate (A), instant water use efficiency (WUEi) and carbon isotope discrimination (CID), and yield traits of biomass production plant-1 (BYPP) and grain yield plant-1 (GYPP). Correlation analysis revealed that the expression of TaER1 and TaER2 at the two growth stages was significantly and negatively associated with SD (P<0.01), transpiration rate (P<0.05) and CID (P<0.01), while significantly and positively correlated with flag leaf area (FLA, P<0.01), A (P<0.05), WUEi (P<0.05), BYPP (P<0.01) and GYPP (P<0.01), with stronger correlations for TaER1 than TaER2 and at grain-filling stage than at heading stage. These combined results suggested that TaER involved in development of transpiration efficiency -related traits and yield in bread wheat, implying a function for TaER in regulating leaf development of bread wheat and contributing to expression of these traits. Moreover, the results indicate

TaER Expression Is Associated with Transpiration Efficiency Traits and Yield in Bread Wheat.

PubMed

Zheng, Jiacheng; Yang, Zhiyuan; Madgwick, Pippa J; Carmo-Silva, Elizabete; Parry, Martin A J; Hu, Yin-Gang

2015-01-01

ERECTA encodes a receptor-like kinase and is proposed as a candidate for determining transpiration efficiency of plants. Two genes homologous to ERECTA in Arabidopsis were identified on chromosomes 6 (TaER2) and 7 (TaER1) of bread wheat (Triticum aestivum L.), with copies of each gene on the A, B and D genomes of wheat. Similar expression patterns were observed for TaER1 and TaER2 with relatively higher expression of TaER1 in flag leaves of wheat at heading (Z55) and grain-filling (Z73) stages. Significant variations were found in the expression levels of both TaER1 and TaER2 in the flag leaves at both growth stages among 48 diverse bread wheat varieties. Based on the expression of TaER1 and TaER2, the 48 wheat varieties could be classified into three groups having high (5 varieties), medium (27 varieties) and low (16 varieties) levels of TaER expression. Significant differences were also observed between the three groups varying for TaER expression for several transpiration efficiency (TE)- related traits, including stomatal density (SD), transpiration rate, photosynthetic rate (A), instant water use efficiency (WUEi) and carbon isotope discrimination (CID), and yield traits of biomass production plant-1 (BYPP) and grain yield plant-1 (GYPP). Correlation analysis revealed that the expression of TaER1 and TaER2 at the two growth stages was significantly and negatively associated with SD (P<0.01), transpiration rate (P<0.05) and CID (P<0.01), while significantly and positively correlated with flag leaf area (FLA, P<0.01), A (P<0.05), WUEi (P<0.05), BYPP (P<0.01) and GYPP (P<0.01), with stronger correlations for TaER1 than TaER2 and at grain-filling stage than at heading stage. These combined results suggested that TaER involved in development of transpiration efficiency -related traits and yield in bread wheat, implying a function for TaER in regulating leaf development of bread wheat and contributing to expression of these traits. Moreover, the results indicate