Quantitative proteomic analysis of the brainstem following lethal sarin exposure.

PubMed

Meade, Mitchell L; Hoffmann, Andrea; Makley, Meghan K; Snider, Thomas H; Schlager, John J; Gearhart, Jeffery M

2015-06-22

The brainstem represents a major tissue area affected by sarin organophosphate poisoning due to its function in respiratory and cardiovascular control. While the acute toxic effects of sarin on brainstem-related responses are relatively unknown, other brain areas e.g., cortex or cerebellum, have been studied more extensively. The study objective was to analyze the guinea pig brainstem toxicology response following sarin (2×LD50) exposure by proteome pathway analysis to gain insight into the complex regulatory mechanisms that lead to impairment of respiratory and cardiovascular control. Guinea pig exposure to sarin resulted in the typical acute behavior/physiology outcomes with death between 15 and 25min. In addition, brain and blood acetylcholinesterase activity was significantly reduced in the presence of sarin to 95%, and 89%, respectively, of control values. Isobaric-tagged (iTRAQ) liquid chromatography tandem mass spectrometry (LC-MS/MS) identified 198 total proteins of which 23% were upregulated, and 18% were downregulated following sarin exposure. Direct gene ontology (GO) analysis revealed a sarin-specific broad-spectrum proteomic profile including glutamate-mediated excitotoxicity, calcium overload, energy depletion responses, and compensatory carbohydrate metabolism, increases in ROS defense, DNA damage and chromatin remodeling, HSP response, targeted protein degradation (ubiquitination) and cell death response. With regards to the sarin-dependent effect on respiration, our study supports the potential interference of sarin with CO2/H(+) sensitive chemoreceptor neurons of the brainstem retrotrapezoid nucleus (RTN) that send excitatory glutamergic projections to the respiratory centers. In conclusion, this study gives insight into the brainstem broad-spectrum proteome following acute sarin exposure and the gained information will assist in the development of novel countermeasures. Published by Elsevier B.V.

Sarin (GB, O-isopropyl methylphosphonofluoridate) neurotoxicity: critical review

PubMed Central

Abou-Donia, Mohamed B.; Siracuse, Briana; Gupta, Natasha; Sokol, Ashly Sobel

2017-01-01

Sarin (GB, O-isopropyl methylphosphonofluoridate) is a potent organophosphorus (OP) nerve agent that inhibits acetylcholinesterase (AChE) irreversibly. The subsequent build-up of acetylcholine (ACh) in the central nervous system (CNS) provokes seizures and, at sufficient doses, centrally-mediated respiratory arrest. Accumulation of ACh at peripheral autonomic synapses leads to peripheral signs of intoxication and overstimulation of the muscarinic and nicotinic receptors, which is described as “cholinergic crisis” (i.e. diarrhea, sweating, salivation, miosis, bronchoconstriction). Exposure to high doses of sarin can result in tremors, seizures, and hypothermia. More seriously, build-up of ACh at neuromuscular junctions also can cause paralysis and ultimately peripherally-mediated respiratory arrest which can lead to death via respiratory failure. In addition to its primary action on the cholinergic system, sarin possesses other indirect effects. These involve the activation of several neurotransmitters including gamma-amino-butyric acid (GABA) and the alteration of other signaling systems such as ion channels, cell adhesion molecules, and inflammatory regulators. Sarin exposure is associated with symptoms of organophosphate-induced delayed neurotoxicity (OPIDN) and organophosphate-induced chronic neurotoxicity (OPICN). Moreover, sarin has been involved in toxic and immunotoxic effects as well as organophosphate-induced endocrine disruption (OPIED). The standard treatment for sarin-like nerve agent exposure is post-exposure injection of atropine, a muscarinic receptor antagonist, accompanied by an oxime, an AChE reactivator, and diazepam. PMID:27705071

Aum Shinrikyo's Chemical and Biological Weapons: More Than Sarin.

PubMed

Tu, A T

2014-07-01

The radical religious group Aum Shinrikyo was founded in Japan in the 1980s and grew rapidly in the 1990s. Aum members perpetrated a mass murder in Matsumoto City in 1994, where they used sarin as a chemical weapon to poison approximately 500 civilians. On March 20, 1995, Aum deployed sarin in an even larger terrorist attack on the Tokyo Subway System, which poisoned some 6,000 people. After the Tokyo Subway attack, the Japanese Police arrested the sect's senior members. From 2005 through 2011, 13 of these senior members were sentenced to death. In this article, aspects of Aum's chemical and biological terrorism are reviewed. Sarin production efforts by the sect are described, including how the degradation product of sarin in soil, methylphosphonic acid, enabled the detection of sarin production sites. Also, Aum's chemical-warfare agents other than sarin are described, as are its biological weapons. The author was permitted by the Japanese government to interview Dr. Tomomasa Nakagawa, one of the senior members of Aum Shinrikyo. From Dr. Nakagawa the author obtained valuable inside information about Aum's chemical and biological weapons programs. Copyright © 2014 Central Police University.

Aerosolized scopolamine protects against microinstillation inhalation toxicity to sarin in guinea pigs.

PubMed

Che, Magnus M; Chanda, Soma; Song, Jian; Doctor, Bhupendra P; Rezk, Peter E; Sabnekar, Praveena; Perkins, Michael W; Sciuto, Alfred M; Nambiar, Madhusoodana P

2011-07-01

Sarin is a volatile nerve agent that has been used in the Tokyo subway attack. Inhalation is predicted to be the major route of exposure if sarin is used in war or terrorism. Currently available treatments are limited for effective postexposure protection against sarin under mass casualty scenario. Nasal drug delivery is a potential treatment option for mass casualty under field conditions. We evaluated the efficacy of endotracheal administration of muscarinic antagonist scopolamine, a secretion blocker which effectively crosses the blood-brain barrier for protection against sarin inhalation toxicity. Age and weight matched male Hartley guinea pigs were exposed to 677.4 mg/m³ or 846.5 mg/ m³ (1.2 × LCt₅₀) sarin by microinstillation inhalation exposure for 4 min. One minute later, the animals exposed to 846.5 mg/ m³ sarin were treated with endotracheally aerosolized scopolamine (0.25 mg/kg) and allowed to recover for 24 h for efficacy evaluation. The results showed that treatment with scopolamine increased the survival rate from 20% to 100% observed in untreated sarin-exposed animals. Behavioral symptoms of nerve agent toxicity including, convulsions and muscular tremors were reduced in sarin-exposed animals treated with scopolamine. Sarin-induced body weight loss, decreased blood O₂ saturation and pulse rate were returned to basal levels in scopolamine-treated animals. Increased bronchoalveolar lavage (BAL) cell death due to sarin exposure was returned to normal levels after treatment with scopolamine. Taken together, these data indicate that postexposure treatment with aerosolized scopolamine prevents respiratory toxicity and protects against lethal inhalation exposure to sarin in guinea pigs.

Neuroprotective mechanisms activated in non-seizing rats exposed to sarin.

PubMed

Te, Jerez A; Spradling-Reeves, Kimberly D; Dillman, James F; Wallqvist, Anders

2015-08-27

Exposure to organophosphate (OP) nerve agents, such as sarin, may lead to uncontrolled seizures and irreversible brain injury and neuropathology. In rat studies, a median lethal dose of sarin leads to approximately half of the animals developing seizures. Whereas previous studies analyzed transcriptomic effects associated with seizing sarin-exposed rats, our study focused on the cohort of sarin-exposed rats that did not develop seizures. We analyzed the genomic changes occurring in sarin-exposed, non-seizing rats and compared differentially expressed genes and pathway activation to those of seizing rats. At the earliest time point (0.25 h) and in multiple sarin-sensitive brain regions, defense response genes were commonly expressed in both groups of animals as compared to the control groups. All sarin-exposed animals activated the MAPK signaling pathway, but only the seizing rats activated the apoptotic-associated JNK and p38 MAPK signaling sub-pathway. A unique phenotype of the non-seizing rats was the altered expression levels of genes that generally suppress inflammation or apoptosis. Importantly, the early transcriptional response for inflammation- and apoptosis-related genes in the thalamus showed opposite trends, with significantly down-regulated genes being up-regulated, and vice versa, between the seizing and non-seizing rats. These observations lend support to the hypothesis that regulation of anti-inflammatory genes might be part of an active and sufficient response in the non-seizing group to protect against the onset of seizures. As such, stimulating or activating these responses via pretreatment strategies could boost resilience against nerve agent exposures. Published by Elsevier B.V.

Measurement of breakthrough volumes of volatile chemical warfare agents on a poly(2,6-diphenylphenylene oxide)-based adsorbent and application to thermal desorption-gas chromatography/mass spectrometric analysis.

PubMed

Kanamori-Kataoka, Mieko; Seto, Yasuo

2015-09-04

To establish adequate on-site solvent trapping of volatile chemical warfare agents (CWAs) from air samples, we measured the breakthrough volumes of CWAs on three adsorbent resins by an elution technique using direct electron ionization mass spectrometry. The trapping characteristics of Tenax(®) TA were better than those of Tenax(®) GR and Carboxen(®) 1016. The latter two adsorbents showed non-reproducible breakthrough behavior and low VX recovery. The specific breakthrough values were more than 44 (sarin) L/g Tenax(®) TA resin at 20°C. Logarithmic values of specific breakthrough volume for four nerve agents (sarin, soman, tabun, and VX) showed a nearly linear correlation with the reciprocals of their boiling points, but the data point of sulfur mustard deviated from this linear curve. Next, we developed a method to determine volatile CWAs in ambient air by thermal desorption-gas chromatography (TD-GC/MS). CWA solutions that were spiked into the Tenax TA(®) adsorbent tubes were analyzed by a two-stage TD-GC/MS using a Tenax(®) TA-packed cold trap tube. Linear calibration curves for CWAs retained in the resin tubes were obtained in the range between 0.2pL and 100pL for sarin, soman, tabun, cyclohexylsarin, and sulfur mustard; and between 2pL and 100pL for VX and Russian VX. We also examined the stability of CWAs in Tenax(®) TA tubes purged with either dry or 50% relative humidity air under storage conditions at room temperature or 4°C. More than 80% sarin, soman, tabun, cyclohexylsarin, and sulfur mustard were recovered from the tubes within 2 weeks. In contrast, the recoveries of VX and Russian VX drastically reduced with storage time at room temperature, resulting in a drop to 10-30% after 2 weeks. Moreover, we examined the trapping efficiency of Tenax TA(®) adsorbent tubes for vaporized CWA samples (100mL) prepared in a 500mL gas sampling cylinder. In the concentration range of 0.2-2.5mg/m(3), >50% of sarin, soman, tabun, cyclohexylsarin, and HD were

The by-products generated during sarin synthesis in the Tokyo sarin disaster induced inhibition of natural killer and cytotoxic T lymphocyte activity.

PubMed

Li, Q; Hirata, Y; Piao, S; Minami, M

2000-05-05

More than 5000 passengers on Tokyo subway trains were injured by the nerve gas, sarin and its by-products. Analysis of phosphor-carrying metabolites of sarin and its by-products in urine samples from the victims suggested that they were exposed not only to sarin, but also by-products generated during sarin synthesis, i.e. diisopropyl methylphosphonate (DIMP) and diethyl methylphosphonate (DEMP). We suspected genetic after-effects due to sarin by-products, thus, we checked the frequency of sister chromatid exchange (SCE) and found that SCE was significantly higher in the victims than in a control group, and that DIMP and DEMP significantly induced human lymphocyte SCE in vitro. In the present study, to explore whether DIMP and DEMP, which induced a high frequency of SCE of lymphocytes, also affected the lymphocyte functions, we examined the effect of DIMP and DEMP on splenic natural killer (NK) and splenic cytotoxic T lymphocyte (CTL) activity in mice, and NK activity of human lymphocytes in vitro. We found that DIMP and DEMP significantly inhibited NK and CTL activity in a dose-dependent manner. The inhibition induced by DIMP was stronger than that by DEMP. The effect of DIMP and DEMP on the splenic NK activity of mice was stronger than on the splenic CTL activity, and the human lymphocytes is more sensitive to DIMP and DEMP than the splenocytes of mice.

Proceedings of the Symposium on Nuclear, Biological and Chemical Contamination Survivability (NBCCS). Developing Contamination-Survivable Defense Systems

DTIC Science & Technology

1994-10-01

34 78.8Sam GA (Tabun) GB (Sarin) True TrAjectory Angle , .Detsetor Window 45.0 d eu l -F None Defined D ( Mustard ) E roun .~uf ac Tg~ 1 S ($I".) Froud...Q0.25 ,10 VX.13--P.C.03 0,2siDS2 rl*40 awwhnm~madth.ii w I 0376 1 101 ɘ.25 1£e10 VN1 PCW po:tS ypd ~ihnja.og.lwum 1[T 03V]60l1-1.51 60.4 VX-14 P.C.0 1ot...The MICAD N8008 Program WWUIat ---- ACALSPAN j C N FUNCTIONAL PERFORMANCE TEST RESULTS block gas 02 aIOLcK3ICAL III VX TOD UASELIPIK POT PS UJIO pir O

Effects of sarin on the nervous system in rescue team staff members and police officers 3 years after the Tokyo subway sarin attack.

PubMed

Nishiwaki, Y; Maekawa, K; Ogawa, Y; Asukai, N; Minami, M; Omae, K

2001-11-01

Although the clinical manifestations of acute sarin poisoning have been reported in detail, no comprehensive study of the chronic physical and psychiatric effects of acute sarin poisoning has been carried out. To clarify the chronic effects of sarin on the nervous system, a cross-sectional epidemiologic study was conducted 3 years after the Tokyo subway sarin attack. Subjects consisted of the rescue team staff members and police officers who had worked at the disaster site. Subjects consisted of 56 male exposed subjects and 52 referent subjects matched for age and occupation. A neurobehavioral test, stabilometry, and measurement of vibration perception thresholds were performed, as well as psychometric tests to assess traumatic stress symptoms. The exposed group performed less well in the backward digit span test than the referent group in a dose-effect manner. This result was the same after controlling for possible confounding factors and was independent of traumatic stress symptoms. In other tests of memory function, except for the Benton visual retention test (mean correct answers), effects related to exposure were also suggested, although they were not statistically significant. In contrast, the dose-effect relationships observed in the neurobehavioral tests (psychomotor function) were unclear. None of the stabilometry and vibration perception threshold parameters had any relation to exposure. Our findings suggest the chronic decline of memory function 2 years and 10 months to 3 years and 9 months after exposure to sarin in the Tokyo subway attack, and further study is needed.

Effects of sarin on the nervous system in rescue team staff members and police officers 3 years after the Tokyo subway sarin attack.

PubMed Central

Nishiwaki, Y; Maekawa, K; Ogawa, Y; Asukai, N; Minami, M; Omae, K

2001-01-01

Although the clinical manifestations of acute sarin poisoning have been reported in detail, no comprehensive study of the chronic physical and psychiatric effects of acute sarin poisoning has been carried out. To clarify the chronic effects of sarin on the nervous system, a cross-sectional epidemiologic study was conducted 3 years after the Tokyo subway sarin attack. Subjects consisted of the rescue team staff members and police officers who had worked at the disaster site. Subjects consisted of 56 male exposed subjects and 52 referent subjects matched for age and occupation. A neurobehavioral test, stabilometry, and measurement of vibration perception thresholds were performed, as well as psychometric tests to assess traumatic stress symptoms. The exposed group performed less well in the backward digit span test than the referent group in a dose-effect manner. This result was the same after controlling for possible confounding factors and was independent of traumatic stress symptoms. In other tests of memory function, except for the Benton visual retention test (mean correct answers), effects related to exposure were also suggested, although they were not statistically significant. In contrast, the dose-effect relationships observed in the neurobehavioral tests (psychomotor function) were unclear. None of the stabilometry and vibration perception threshold parameters had any relation to exposure. Our findings suggest the chronic decline of memory function 2 years and 10 months to 3 years and 9 months after exposure to sarin in the Tokyo subway attack, and further study is needed. PMID:11713003

Detoxification of tabun at physiological pH mediated by substituted β-cyclodextrin and glucose derivatives containing oxime groups.

PubMed

Brandhuber, Florian; Zengerle, Michael; Porwol, Luzian; Tenberken, Oliver; Thiermann, Horst; Worek, Franz; Kubik, Stefan; Reiter, Georg

2012-12-16

The ability of 13 β-cyclodextrin and 2 glucose derivatives containing substituents with oxime groups as nucleophilic components to accelerate the degradation of tabun at physiological pH has been evaluated. To this end, a qualitative and a quantitative enzymatic assay as well as a highly sensitive enantioselective GC-MS assay were used. In addition, an assay was developed that provided information about the mode of action of the investigated compounds. The results show that attachment of pyridinium-derived substituents with an aldoxime group in 3- or 4-position to a β-cyclodextrin ring affords active compounds mediating tabun degradation. Activities differ depending on the structure, the number, and the position of the substituent on the ring. Highest activity was observed for a β-cyclodextrin containing a 4-formylpyridinium oxime residue in 6-position of one glucose subunit, which detoxifies tabun with a half-time of 10.2 min. Comparison of the activity of this compound with that of an analog in which the cyclodextrin ring was replaced by a glucose residue demonstrated that the cyclodextrin is not necessary for activity but certainly beneficial. Finally, the results provide evidence that the mode of action of the cyclodextrin involves covalent modification of its oxime group rendering the scavenger inactive after reaction with the first tabun molecule. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

Skin decontamination with mineral cationic carrier against sarin determined in vivo.

PubMed

Vucemilović, Ante; Hadzija, Mirko; Jukić, Ivan

2009-06-01

Our Institute's nuclear, biological, and chemical defense research team continuously investigates and develops preparations for skin decontamination against nerve agents. In this in vivo study, we evaluated skin decontamination efficacy against sarin by a synthetic preparation called Mineral Cationic Carrier (MCC) with known ion exchange, absorption efficacy and bioactive potential. Mice were treated with increasing doses of sarin applied on their skin, and MCC was administered immediately after contamination. The results showed that decontamination with MCC could achieve therapeutic efficacy corresponding to 3 x LD(50) of percutaneous sarin and call for further research.

Effect of Several New and Currently Available Oxime Cholinesterase Reactivators on Tabun-intoxicated Rats

PubMed Central

Karasova, Jana Zdarova; Kassa, Jiri; Jung, Young-Sik; Musilek, Kamil; Pohanka, Miroslav; Kuca, Kamil

2008-01-01

The therapeutical efficacies of eleven oxime-based acetylcholinesterase reactivators were compared in an in vivo (rat model) study of treatment of intoxication caused by tabun. In this group there were some currently available oximes (obidoxime, trimedoxime and HI-6) and the rest were newly synthesized compounds. The best reactivation efficacy for acetylcholinesterase in blood (expressed as percent of reactivation) among the currently available oximes was observed after administration of trimedoxime (16%) and of the newly synthesized K127 (22432) (25%). The reactivation of butyrylcholinesterase in plasma was also studied; the best reactivators were trimedoxime, K117 (22435), and K127 (22432), with overall reactivation efficacies of approximately 30%. Partial protection of brain ChE against tabun inhibition was observed after administration of trimedoxime (acetylcholinesterase 20%; butyrylcholinesterase 30%) and obidoxime (acetylcholinesterase 12%; butyrylcholinesterase 16%). PMID:19330072

A comparison of reactivating and therapeutic efficacy of bispyridinium acetylcholinesterase reactivator KR-22934 with the oxime K203 and commonly used oximes (obidoxime, trimedoxime, HI-6) in tabun-poisoned rats and mice.

PubMed

Kassa, Jiri; Karasova, Jana Zdarova; Pavlikova, Ruzena; Musilek, Kamil; Kuca, Kamil; Bajgar, Jiri; Jung, Young-Sik

2011-03-01

The potency of bispyridinium acetylcholinesterase reactivator KR-22934 in reactivating tabun-inhibited acetylcholinesterase and reducing tabun-induced lethal toxic effects was compared with the oxime K203 and commonly used oximes. Studies determining percentage of reactivation of tabun-inhibited blood and tissue acetylcholinesterase in rats showed that the reactivating efficacy of KR-22934 was slightly higher than the reactivating efficacy of K203 and roughly corresponded to the reactivating efficacy of obidoxime and trimedoxime in blood and diaphragm. On the other hand, the oxime KR-22934 was not able to reactivate tabun-inhibited acetylcholinesterase in the brain. The therapeutic efficacy of all oximes studied approximately corresponded to their reactivating efficacy. Based on the results, one can conclude that the oxime KR-22934 is not suitable for the replacement of commonly used oximes for the antidotal treatment of tabun poisoning in spite of its potency to reactivate tabun-inhibited acetylcholinesterase in the peripheral compartment (blood, diaphragm).

Crystal structures of human group-VIIA phospholipase A2 inhibited by organophosphorus nerve agents exhibit non-aged complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samanta, Uttamkumar; Kirby, Stephen D.; Srinivasan, Prabhavathi

The enzyme group-VIIA phospholipase A2 (gVIIA-PLA2) is bound to lipoproteins in human blood and hydrolyzes the ester bond at the sn-2 position of phospholipid substrates with a short sn-2 chain. The enzyme belongs to a serine hydrolase superfamily of enzymes, which react with organophosphorus (OP) nerve agents. OPs ultimately exert their toxicity by inhibiting human acetycholinesterase at nerve synapses, but may additionally have detrimental effects through inhibition of other serine hydrolases. We have solved the crystal structures of gVIIA-PLA2 following inhibition with the OPs diisopropylfluorophosphate, sarin, soman and tabun. The sarin and soman complexes displayed a racemic mix of P{submore » R} and P{sub S} stereoisomers at the P-chiral center. The tabun complex displayed only the P{sub R} stereoisomer in the crystal. In all cases, the crystal structures contained intact OP adducts that had not aged. Aging refers to a secondary process OP complexes can go through, which dealkylates the nerve agent adduct and results in a form that is highly resistant to either spontaneous or oxime-mediated reactivation. Non-aged OP complexes of the enzyme were corroborated by trypsin digest and matrix-assisted laser desorption ionization mass spectrometry of OP-enzyme complexes. The lack of stereoselectivity of sarin reaction was confirmed by gas chromatography/mass spectrometry using a chiral column to separate and quantitate the unbound stereoisomers of sarin following incubation with enzyme. The structural details and characterization of nascent reactivity of several toxic nerve agents is discussed with a long-term goal of developing gVIIA-PLA2 as a catalytic bioscavenger of OP nerve agents.« less

Crystal structures of human group-VIIA phospholipase A2 inhibited by organophosphorus nerve agents exhibit non-aged complexes.

PubMed

Samanta, Uttamkumar; Kirby, Stephen D; Srinivasan, Prabhavathi; Cerasoli, Douglas M; Bahnson, Brian J

2009-08-15

The enzyme group-VIIA phospholipase A2 (gVIIA-PLA2) is bound to lipoproteins in human blood and hydrolyzes the ester bond at the sn-2 position of phospholipid substrates with a short sn-2 chain. The enzyme belongs to a serine hydrolase superfamily of enzymes, which react with organophosphorus (OP) nerve agents. OPs ultimately exert their toxicity by inhibiting human acetycholinesterase at nerve synapses, but may additionally have detrimental effects through inhibition of other serine hydrolases. We have solved the crystal structures of gVIIA-PLA2 following inhibition with the OPs diisopropylfluorophosphate, sarin, soman and tabun. The sarin and soman complexes displayed a racemic mix of P(R) and P(S) stereoisomers at the P-chiral center. The tabun complex displayed only the P(R) stereoisomer in the crystal. In all cases, the crystal structures contained intact OP adducts that had not aged. Aging refers to a secondary process OP complexes can go through, which dealkylates the nerve agent adduct and results in a form that is highly resistant to either spontaneous or oxime-mediated reactivation. Non-aged OP complexes of the enzyme were corroborated by trypsin digest and matrix-assisted laser desorption ionization mass spectrometry of OP-enzyme complexes. The lack of stereoselectivity of sarin reaction was confirmed by gas chromatography/mass spectrometry using a chiral column to separate and quantitate the unbound stereoisomers of sarin following incubation with enzyme. The structural details and characterization of nascent reactivity of several toxic nerve agents is discussed with a long-term goal of developing gVIIA-PLA2 as a catalytic bioscavenger of OP nerve agents.

A critical role of acute bronchoconstriction in the mortality associated with high-dose sarin inhalation: Effects of epinephrine and oxygen therapies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gundavarapu, Sravanthi; Zhuang, Jianguo; Barrett, Edward G.

Sarin is an organophosphate nerve agent that is among the most lethal chemical toxins known to mankind. Because of its vaporization properties and ease and low cost of production, sarin is the nerve agent with a strong potential for use by terrorists and rouge nations. The primary route of sarin exposure is through inhalation and, depending on the dose, sarin leads to acute respiratory failure and death. The mechanism(s) of sarin-induced respiratory failure is poorly understood. Sarin irreversibly inhibits acetylcholine esterase, leading to excessive synaptic levels of acetylcholine and, we have previously shown that sarin causes marked ventilatory changes includingmore » weakened response to hypoxia. We now show that LD{sub 50} sarin inhalation causes severe bronchoconstriction in rats, leading to airway resistance, increased hypoxia-induced factor-1α, and severe lung epithelium injury. Transferring animals into 60% oxygen chambers after sarin exposure improved the survival from about 50% to 75% at 24 h; however, many animals died within hours after removal from the oxygen chambers. On the other hand, if LD{sub 50} sarin-exposed animals were administered the bronchodilator epinephrine, > 90% of the animals survived. Moreover, while both epinephrine and oxygen treatments moderated cardiorespiratory parameters, the proinflammatory cytokine surge, and elevated expression of hypoxia-induced factor-1α, only epinephrine consistently reduced the sarin-induced bronchoconstriction. These data suggest that severe bronchoconstriction is a critical factor in the mortality induced by LD{sub 50} sarin inhalation, and epinephrine may limit the ventilatory, inflammatory, and lethal effects of sarin. - Highlights: • Inhalation exposure of rats to LD{sub 50} sarin causes death through respiratory failure. • Severe bronchoconstriction is the major cause of sarin-induced respiratory failure. • Transfer of sarin exposed rats to 60% oxygen improves the mortality temporarily

Fluorescent discrimination between traces of chemical warfare agents and their mimics.

PubMed

Díaz de Greñu, Borja; Moreno, Daniel; Torroba, Tomás; Berg, Alexander; Gunnars, Johan; Nilsson, Tobias; Nyman, Rasmus; Persson, Milton; Pettersson, Johannes; Eklind, Ida; Wästerby, Pär

2014-03-19

An array of fluorogenic probes is able to discriminate between nerve agents, sarin, soman, tabun, VX and their mimics, in water or organic solvent, by qualitative fluorescence patterns and quantitative multivariate analysis, thus making the system suitable for the in-the-field detection of traces of chemical warfare agents as well as to differentiate between the real nerve agents and other related compounds.

Comparison of Extracellular Striatal Acetylcholine and Brain Seizure Activity Following Acute Exposure to the Nerve Agents Cyclosarin and Tabun in Freely Moving Guinea Pigs

DTIC Science & Technology

2010-01-01

Literature 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Comparison of extracellular striatal acetylcholine and brain seizure activity following...lethality; nerve agents; organophosphorus compounds; seizure activity ; tabun 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT 18. NUMBER...acetylcholine and brain seizure activity following acute exposure to the nerve agents cyclosarin and tabun in freely moving guinea pigs John C

An Acetylcholinesterase-Based Chronoamperometric Biosensor for Fast and Reliable Assay of Nerve Agents

PubMed Central

Pohanka, Miroslav; Adam, Vojtech; Kizek, Rene

2013-01-01

The enzyme acetylcholinesterase (AChE) is an important part of cholinergic nervous system, where it stops neurotransmission by hydrolysis of the neurotransmitter acetylcholine. It is sensitive to inhibition by organophosphate and carbamate insecticides, some Alzheimer disease drugs, secondary metabolites such as aflatoxins and nerve agents used in chemical warfare. When immobilized on a sensor (physico-chemical transducer), it can be used for assay of these inhibitors. In the experiments described herein, an AChE- based electrochemical biosensor using screen printed electrode systems was prepared. The biosensor was used for assay of nerve agents such as sarin, soman, tabun and VX. The limits of detection achieved in a measuring protocol lasting ten minutes were 7.41 × 10−12 mol/L for sarin, 6.31 × 10−12 mol/L for soman, 6.17 × 10−11 mol/L for tabun, and 2.19 × 10−11 mol/L for VX, respectively. The assay was reliable, with minor interferences caused by the organic solvents ethanol, methanol, isopropanol and acetonitrile. Isopropanol was chosen as suitable medium for processing lipophilic samples. PMID:23999806

Efficacy of the Tertiary Oxime Monoisonitrosoacetone (MINA) Against Lethal Sarin Intoxication in the Guinea Pig

DTIC Science & Technology

2007-10-01

Sarin 5a. CONTRACT NUMBER Intoxication in the Guinea Pig 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Koplovitz, I and...efficacy of MINA as a treatment for lethal sarin (GB) intoxication in guinea pigs . Male animals were challenged subcutaneously (s.c.) with 2 LD50s...oximes that are readily able to enter the brain. 15. SUBJECT TERMS oximes, brain, sarin, reactivation, nerve agents, guinea pigs 16. SECURITY

Analysis of chemical warfare agents in food products by atmospheric pressure ionization-high field asymmetric waveform ion mobility spectrometry-mass spectrometry.

PubMed

Kolakowski, Beata M; D'Agostino, Paul A; Chenier, Claude; Mester, Zoltán

2007-11-01

Flow injection high field asymmetric waveform ion mobility spectrometry (FAIMS)-mass spectrometry (MS) methodology was developed for the detection and identification of chemical warfare (CW) agents in spiked food products. The CW agents, soman (GD), sarin (GB), tabun (GA), cyclohexyl sarin (GF), and four hydrolysis products, ethylphosphonic acid (EPA), methylphosphonic acid (MPA), pinacolyl methylphosphonic acid (Pin MPA), and isopropyl methylphosphonic acid (IMPA) were separated and detected by positive ion and negative ion atmospheric pressure ionization-FAIMS-MS. Under optimized conditions, the compensation voltages were 7.2 V for GD, 8.0 V for GA, 7.2 V for GF, 7.6 V for GB, 18.2 V for EPA, 25.9 V for MPA, -1.9 V for PinMPA, and +6.8 V for IMPA. Sample preparation was kept to a minimum, resulting in analysis times of 3 min or less per sample. The developed methodology was evaluated by spiking bottled water, canola oil, cornmeal, and honey samples at low microgram per gram (or microg/mL) levels with the CW agents or CW agent hydrolysis products. The detection limits observed for the CW agents in the spiked food samples ranged from 3 to 15 ng/mL in bottled water, 1-33 ng/mL in canola oil, 1-34 ng/g in cornmeal, and 13-18 ng/g in honey. Detection limits were much higher for the CW agent hydrolysis products, with only MPA being detected in spiked honey samples.

Blood and bronchoalveolar lavage fluid acetylcholinesterase levels following microinstillation inhalation exposure to sarin in Guinea pigs.

PubMed

Che, Magnus M; Conti, Michele; Boylan, Megan; Sciuto, Alfred M; Gordon, Richard K; Nambiar, Madhusoodana P

2008-07-01

We determined acetylcholinesterase (AChE) and butyrylcholinesterase (BChE) inhibition in the bronchoalveolar lavage fluid (BALF) following inhalation exposure to chemical threat nerve agent (CTNA) sarin. Age- and weight-matched male guinea pigs were exposed to five different doses of sarin (169.3, 338.7, 508, 677.4, and 846.5 mg/m(3)) using a microinstillation inhalation exposure technique for 4 min. The technique involves aerosolization of the agent in the trachea using a microcatheter with a center hole that delivers the agent and multiple peripheral holes that pumps air to aerosolize the agent at the tip. Animals exposed to higher doses of sarin occasionally developed seizures and succumbed to death within 15 min after exposure. The LCt(50) for sarin using the microinstillation technique was determined to be close to 677.4 mg/m(3). Ear blood AChE activity showed a dose-dependent inhibition at 15 min postexposure. The inhibition of blood AChE remained constant over 35 and 55 min after sarin exposure indicating that there was no lung depot effect. Cardiac blood AChE and butyrylcholinesterase (BChE) activity in surviving animals euthanized at 24 h postexposure showed a dose-dependent inhibition with an inhibition of 60% at 677.4 and 846.5 mg/m(3) sarin exposure. AChE and BChE activity in bronchoalveolar lavage fluid (BALF) showed a slight increase at 338.7 to 677.4 mg/m(3) sarin exposure but a marginal inhibition at 169.3 mg/m(3). In contrast, the AChE protein levels determined by immunoblotting showed an increase at 169.3 mg/m(3) in the BALF. The BALF protein level, a biomarker of lung injury, was increased maximally at 338.7 mg/m(3) and that increase was dropped with an increase in the dose of sarin. The BALF protein levels correlated with the AChE and BChE activity. These data suggest that sarin microinstillation inhalation exposure results in respiratory toxicity and lung injury characterized by changes in lavage AChE, BChE, and protein levels.

Microfluidic chip with optical sensor for rapid detection of nerve agent Sarin in water samples

NASA Astrophysics Data System (ADS)

Tan, Hsih Yin; Nguyen, Nam-Trung; Loke, Weng Keong; Tan, Yong Teng

2007-12-01

The chemical warfare agent Sarin is an organophosphate that is highly toxic to humans as they can act as cholinesterase inhibitors, that disrupts neuromuscular transmission. As these nerve agents are colorless, odorless and highly toxic, they can be introduced into drinking water as a means of terrorist sabotage. Hence, numerous innovative devices and methods have been developed for rapid detection of these organophosphates. Microfluidic technology allows the implementation of fast and sensitive detection of Sarin. In this paper, a micro-total analysis systems (TAS), also known as Lab-on-a-chip, fitted with an optical detection system has been developed to analyze the presence of the nerve agent sarin in water samples. In the present set-up, inhibition of co-introduced cholinesterase and water samples containing trace amounts of nerve agent sarin into the microfluidic device was used as the basis for selective detection of sarin. The device was fabricated using polymeric micromachining with PMMA (poly (methymethacrylate)) as the substrate material. A chromophore was utilized to measure the activity of remnant cholinesterase activity, which is inversely related to the amount of sarin present in the water samples. Comparisons were made between two different optical detection techniques and the findings will be presented in this paper. The presented measurement method is simple, fast and as sensitive as Gas Chromatography.

Supralethal poisoning by any of the classical nerve agents is effectively counteracted by procyclidine regimens in rats.

PubMed

Myhrer, Trond; Mariussen, Espen; Enger, Siri; Aas, Pål

2015-09-01

A treatment regimen consisting of HI-6, levetiracetam, and procyclidine (termed the triple regimen) has previously been shown to work as a universal therapy against soman poisoning in rats, since it has capacities to function as both prophylactic and therapeutic measure. The purpose of the present study was to examine whether the triple regimen may have antidotal efficacy against intoxication by other classical nerve agents than soman. The treatment was given 1 and 5 min after exposure to a supralethal dose of nerve agents, and the results showed that the triple regimen successfully prevented or terminated seizures and preserved the lives of rats exposed to 5×LD50 of soman, sarin, cyclosarin, or VX, but solely 3×LD50 of tabun was managed by this regimen. To meet the particular antidotal requirements of tabun, the triple regimen was reinforced with obidoxime and was made to a quadruple regimen that effectively treated rats intoxicated by 5×LD50 of tabun. The rats recovered very well and the majority gained pre-exposure body weight within 7 days. Neuropathology was seen in all groups regardless of whether the rats seized or not. The most extensive damage was produced by sarin and cyclosarin. Differentiation between the nerve agents' potency to cause lesions was probably seen because the efficacious treatments ensured survival of supralethal poisoning. A combination of 2 oximes and 2 anticonvulsants may be a prerequisite to counteract effectively high levels of poisoning by any classical nerve agent. Copyright © 2015 Elsevier Inc. All rights reserved.

Comparison of extracellular striatal acetylcholine and brain seizure activity following acute exposure to the nerve agents cyclosarin and tabun in freely moving guinea pigs.

PubMed

O'Donnell, John C; Acon-Chen, Cindy; McDonough, John H; Shih, Tsung-Ming

2010-11-01

Organophosphorus nerve agents like cyclosarin and tabun are potent cholinesterase inhibitors. The inhibition of acetylcholinesterase, which is responsible for breaking down acetylcholine (ACh) at the synapse and neuromuscular junction, leads to a build-up of extracellular ACh and a series of toxic consequences including hypersecretion, tremor, convulsion/seizure, respiratory distress, coma, and death. This study employed simultaneous and continuous electroencephalographic recording and striatal microdialysis collection for quantification of ACh changes (via subsequent HPLC analysis) during acute exposure to a 1.0 × LD(50) subcutaneous dose of either cyclosarin or tabun to investigate differences in cholinergic and behavioral effects. Information about the unique mechanisms and consequences of different nerve agents is intended to aid in the development of broad-spectrum medical countermeasures for nerve agents. At the dose administered, non-seizure and sustained seizure responses were observed in both agent groups and in the tabun-exposed group some subjects experienced an unsustained seizure response. Significant extracellular ACh increases were only observed in seizure groups. Cyclosarin and tabun were found to exhibit some unique cholinergic and ictogenic characteristics. Lethality only occurred in subjects experiencing sustained seizure, and there was no difference in lethality between agent groups that progressed to sustained seizure.

Comparative Kinetics and Distribution to Target Tissues of Organophosphates Using Physiologically - Based Pharmacokinetic Modeling

DTIC Science & Technology

2008-03-01

throughout history where nerve agents have been used on human populations, such as the subway bombing in Tokyo and Matsumoto, Japan. Data can be...kidney, fat, diaphragm, arterial blood, venous blood, bronchial passages, and the skin. The remaining tissues will be lumped together as either slowly...were then further developed as a weapon, whose primary effect is on the central nervous system. These agents are tabun, sarin, soman, and VX. They

Dissociation of sarin on a cement analogue surface: Effects of humidity and confined geometry

DOE PAGES

O’Brien, Christopher J.; Greathouse, Jeffery A.; Tenney, Craig M.

2016-11-22

Here, first-principles molecular dynamics simulations were used to investigate the dissociation of sarin (GB) on the calcium silicate hydrate (CSH) mineral tobermorite (TBM), a surrogate for cement. CSH minerals (including TBM) and amorphous materials of similar composition are the major components of Portland cement, the binding agent of concrete. Metadynamics simulations were used to investigate the effect of the TBM surface and confinement in a microscale pore on the mechanism and free energy of dissociation of GB. Our results indicate that both the adsorption site and the humidity of the local environment significantly affect the sarin dissociation energy. In particular,more » sarin dissociation in a low-water environment occurs via a dealkylation mechanism, which is consistent with previous experimental studies.« less

Novel brain-penetrating oximes for reactivation of cholinesterase inhibited by sarin and VX surrogates.

PubMed

Chambers, Janice E; Meek, Edward C; Chambers, Howard W

2016-06-01

Current oxime reactivators for organophosphate-inhibited cholinesterase (ChE) do not effectively cross the blood-brain barrier and therefore cannot restore brain ChE activity in vivo. Our laboratories have studied highly relevant sarin and VX surrogates, which differ from their respective nerve agents only in the leaving group and thereby leave ChE phosphylated with the same chemical moiety as sarin and VX. Our laboratories have developed novel substituted phenoxyalkyl pyridinium oximes that lead to reduced ChE inhibition in the brains of rats challenged with a high sublethal dosage of the sarin surrogate, whereas 2-PAM did not, using a paradigm designed to demonstrate brain penetration. In addition, treatment of rats with these novel oximes is associated with attenuation of seizure-like behavior compared to rats treated with 2-PAM, providing additional evidence that the oximes penetrate the blood-brain barrier. Further, some of the oximes provided 24-h survival superior to 2-PAM, and shortened the duration of seizure-like behavior when rats were challenged with lethal dosages of the sarin and VX surrogates, providing additional support for the conclusion that these oximes penetrate the brain. © 2016 New York Academy of Sciences.

Pathways for the Oxidation of Sarin in Urban Atmospheres

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerald E. Streit; James E. Bossert; Jeffrey S. Gaffney

1998-11-01

Terrorists have threatened and carried out chemicalhiological agent attacks on targets in major cities. The nerve agent sarin figured prominently in one well-publicized incident. Vapors disseminating from open containers in a Tokyo subway caused thousands of casualties. High-resolution tracer transport modeling of agent dispersion is at hand and will be enhanced by data on reactions with components of the urban atmosphere. As a sample of the level of complexity currently attainable, we elaborate the mechanisms by which sarin can decompose in polluted air. A release scenario is outlined involving the passage of a gas-phase agent through a city locale inmore » the daytime. The atmospheric chemistry database on related organophosphorus pesticides is mined for rate and product information. The hydroxyl,radical and fine-mode particles are identified as major reactants. A review of urban air chernistry/rnicrophysics generates concentration tables for major oxidant and aerosol types in both clean and dirty environments. Organic structure-reactivity relationships yield an upper limit of 10-1' cm3 molecule-' S-* for hydrogen abstraction by hydroxyl. The associated midday loss time scale could be as little as one hour. Product distributions are difficult to define but may include nontoxic organic oxygenates, inorganic phosphorus acids, sarin-like aldehydes, and nitrates preserving cholinergic capabilities. Agent molecules will contact aerosol surfaces in on the order of minutes, with hydrolysis and side-chain oxidation as likely reaction channels.« less

The Potential Neurotoxic Effects of Low-Dose Sarin Exposure in a Guinea Pig Model

DTIC Science & Technology

2002-01-01

1 THE POTENTIAL NEUROTOXIC EFFECTS OF LOW-DOSE SARIN EXPOSURE IN A GUINEA PIG MODEL Melinda R. Roberson, PhD, Michelle B. Schmidt...Proving Ground, MD 21010 USA ABSTRACT This study is assessing the effects in guinea pigs of repeated low-dose exposure to the nerve...COVERED - 4. TITLE AND SUBTITLE The Potential Neurotoxic Effects Of Low-Dose Sarin Exposure In A Guinea Pig Model 5a. CONTRACT NUMBER 5b

Novel brain-penetrating oximes for reactivation of cholinesterase inhibited by sarin and VX surrogates

PubMed Central

Chambers, Janice E.; Meek, Edward C.; Chambers, Howard W.

2016-01-01

Current oxime reactivators for organophosphate-inhibited cholinesterase (ChE) do not effectively cross the blood–brain barrier and therefore cannot restore brain ChE activity in vivo. Our laboratories have studied highly relevant sarin and VX surrogates, which differ from their respective nerve agents only in the leaving group and thereby leave ChE phosphylated with the same chemical moiety as sarin and VX. Our laboratories have invented novel substituted phenoxyalkyl pyridinium oximes (U.S. Patent 9,227,937 B2) that lead to reduced ChE inhibition in the brains of rats challenged with a high sublethal dosage of the sarin surrogate, whereas 2-PAM did not, using a paradigm designed to demonstrate brain penetration. In addition, these novel oximes also showed an attenuation of seizure-like behavior compared to rats treated with 2-PAM, giving additional evidence of the ability of these oximes to penetrate the blood–brain barrier. Further, some of these oximes provided 24-hour survival superior to 2-PAM and shortened the duration of seizure-like behavior when rats were challenged with lethal dosages of the sarin and VX surrogates, providing additional support for the concept of these life-saving oximes penetrating the brain. PMID:27153507

Treatment with endotracheal therapeutics after sarin microinstillation inhalation exposure increases blood cholinesterase levels in guinea pigs.

PubMed

Che, Magnus M; Song, Jian; Oguntayo, Samuel; Doctor, Bhupendra P; Rezk, Peter; Perkins, Michael W; Sciuto, Alfred M; Nambiar, Madhusoodana P

2012-05-01

Acetylcholinesterase (AChE) and butyrylcholinesterase (BChE) activities were measured in the blood and tissues of animals that are treated with a number of endotracheally aerosolized therapeutics for protection against inhalation toxicity to sarin. Therapeutics included, aerosolized atropine methyl bromide (AMB), scopolamine or combination of AMB with salbutamol, sphingosine 1-phosphate, keratinocyte growth factor, adenosine A1 receptor antisense oligonucleotide (EPI2010), 2,3-diacetyloxybenzoic acid (2,3 DABA), oxycyte, and survanta. Guinea pigs exposed to 677.4 mg/m(3) or 846.5 mg/m(3) (1.2 LCt(50)) sarin for 4 min using a microinstillation inhalation exposure technique and treated 1 min later with the aerosolized therapeutics. Treatment with all therapeutics significantly increased the survival rate with no convulsions throughout the 24 h study period. Blood AChE activity determined using acetylthiocholine as substrate showed 20% activity remaining in sarin-exposed animals compare to controls. In aerosolized AMB and scopolamine-treated animals the remaining AChE activity was significantly higher (45-60%) compared to sarin-exposed animals (p < 0.05). Similarly, treatment with all the combination therapeutics resulted in significant increase in blood AChE activity in comparison to sarin-exposed animals although the increases varied between treatments (p < 0.05). BChE activity was increased after treatment with aerosolized therapeutics but was lesser in magnitude compared to AChE activity changes. Various tissues showed elevated AChE activity after therapeutic treatment of sarin-exposed animals. Increased AChE and BChE activities in animals treated with nasal therapeutics suggest that enhanced breathing and reduced respiratory toxicity/lung injury possibly contribute to rapid normalization of chemical warfare nerve agent inhibited cholinesterases.

Can hydroxylamine be a more potent nucleophile for the reactivation of tabun-inhibited AChE than prototype oxime drugs? An answer derived from quantum chemical and steered molecular dynamics studies.

PubMed

Lo, Rabindranath; Ganguly, Bishwajit

2014-07-29

Organophosphorus nerve agents are highly toxic compounds which strongly inhibit acetylcholinesterase (AChE) in the blood and in the central nervous system (CNS). Tabun is one of the highly toxic organophosphorus (OP) compounds and is resistant to many oxime drugs formulated for the reactivation of AChE. The reactivation mechanism of tabun-conjugated AChE with various drugs has been examined with density functional theory and ab initio quantum chemical calculations. The presence of a lone-pair located on the amidic group resists the nucleophilic attack at the phosphorus center of the tabun-conjugated AChE. We have shown that the newly designed drug candidate N-(pyridin-2-yl)hydroxylamine, at the MP2/6-31+G*//M05-2X/6-31G* level in the aqueous phase with the polarizable continuum solvation model (PCM), is more effective in reactivating the tabun-conjugated AChE than typical oxime drugs. The rate determining activation barrier with N-(pyridin-2-yl)hydroxylamine was found to be ∼1.7 kcal mol(-1), which is 7.2 kcal mol(-1) lower than the charged oxime trimedoxime (one of the most efficient reactivators in tabun poisonings). The greater nucleophilicity index (ω(-)) and higher CHelpG charge of pyridinylhydroxylamine compared to TMB4 support this observation. Furthermore, we have also examined the reactivation process of tabun-inhibited AChE with some other bis-quaternary oxime drug candidates such as methoxime (MMB4) and obidoxime. The docking analysis suggests that charged bis-quaternary pyridinium oximes have greater binding affinity inside the active-site gorge of AChE compared to the neutral pyridinylhydroxylamine. The peripheral ligand attached to the neutral pyridinylhydroxylamine enhanced the binding with the aromatic residues in the active-site gorge of AChE through effective π-π interactions. Steered molecular dynamics (SMD) simulations have also been performed with the charged oxime (TMB4) and the neutral hydroxylamine. From protein-drug interaction

Cardiovascular effects of the adenosine A1 receptor agonist N6-cyclopentyladenosine (CPA) decisive for its therapeutic efficacy in sarin poisoning.

PubMed

Joosen, Marloes J A; Bueters, Tjerk J H; van Helden, Herman P M

2004-01-01

Mortality and occurrence of cholinergic symptoms upon sarin intoxication (144 micro g/kg s.c., approximately 2 x LD50) in rats is completely prevented by treatment with the adenosine A1 receptor agonist N6-cyclopentyladenosine (CPA, 2 mg/kg i.m.). Previously, we have shown that CPA treatment altered the distribution of sarin into the brain, presumably through its cardiovascular side effects. Therefore, the objective of the present study was to evaluate the contribution of the cardiodepressant effects of CPA to its therapeutic efficacy against sarin intoxication. Intramuscular treatment of rats with 0.5 and 2.0 mg/kg CPA 1 min after sarin poisoning attenuated most cholinergic symptoms and prevented mortality, which seemed to be directly associated with an immediate strong and long-lasting bradycardia and hypotension caused by CPA. Treatment with lower doses of CPA (0.1 and 0.05 mg/kg i.m.) caused similar levels of bradycardia and hypotension, albeit a few minutes later than at the higher doses of CPA. Upon sarin intoxication, this was correlated with increased incidence of cholinergic symptoms and decreased survival rates. Pretreatment with the peripheral adenosine A1 receptor antagonist 8- p-sulphophenyltheophylline (8-PST, 20 mg/kg i.p.) counteracted the cardiodepressant effects of 0.05 mg/kg CPA almost completely, thereby nearly abolishing its therapeutic efficacy against sarin poisoning. In conclusion, the present results strongly indicate that bradycardia and hypotension induced by the peripheral adenosine A1 receptor play a prominent role in the therapeutic efficacy of CPA in cases of sarin poisoning.

Changes of rat plasma total low molecular weight antioxidant level after tabun exposure and consequent treatment by acetylcholinesterase reactivators.

PubMed

Pohanka, Miroslav; Karasova, Jana Zdarova; Musilek, Kamil; Kuca, Kamil; Jung, Young-Sik; Kassa, Jiri

2011-02-01

These experiments were performed on a rat model. The rats were divided into eight groups and consequently exposed to either a saline solution (control), atropine or a combination of atropine and tabun. The reactivation efficacy of the oximes was estimated on the rats exposed to tabun, atropine and a reactivator of AChE. The oximes HI-6, obidoxime, trimedoxime, K203 and KR-22836 were used as representative compounds of commonly available and new AChE reactivators. Besides the positive effect of the administered reactivators on blood AChE activity, the sizable modulation of low molecular weight antioxidant (LMWA) levels was also determined. The LMWA levels in the the animals treated with the oxime reactivators were decreased in comparison with the animals treated by atropine alone. It was found that the levels of LMWA returned to the level found in the control animals when either trimedoxime, K203 or KR-22836 were administered. The principle of oxime reactivator function and a novel insight into AChE activity regulation and oxidative stress is discussed.

Micromotor-based on-off fluorescence detection of sarin and soman simulants.

PubMed

Singh, Virendra V; Kaufmann, Kevin; Orozco, Jahir; Li, Jinxing; Galarnyk, Michael; Arya, Gaurav; Wang, Joseph

2015-06-30

Self-propelled micromotor-based fluorescent "On-Off" detection of nerve agents is described. The motion-based assay utilizes Si/Pt Janus micromotors coated with fluoresceinamine toward real-time "on-the-fly" field detection of sarin and soman simulants.

A comparison of the reactivating and therapeutic efficacy of two novel bispyridinium oximes (K727, K733) with the oxime HI-6 and obidoxime in sarin-poisoned rats and mice.

PubMed

Kassa, Jiri; Sepsova, Vendula; Matouskova, Lenka; Horova, Anna; Musilek, Kamil

2015-03-01

The ability of two novel bispyridinium oximes K727 and K733 and currently available oximes (HI-6, obidoxime) to reactivate sarin-inhibited acetylcholinesterase and to reduce acute toxicity of sarin was evaluated. To investigate the reactivating efficacy of the oximes, the rats were administered intramuscularly with atropine and oximes in equitoxic doses corresponding to 5% of their LD50 values at 1 min after the intramuscular administration of sarin at a dose of 24 µg/kg (LD50). The activity of acetylcholinesterase was measured at 60 min after sarin poisoning. The LD50 value of sarin in non-treated and treated mice was assessed using probit-logarithmical analysis of death occurring within 24 h after intramuscular administration of sarin at five different doses. In vivo determined percentage of reactivation of sarin-inhibited rat blood, diaphragm and brain acetylcholinesterase showed that the potency of both novel oximes K727 and K733 to reactivate sarin-inhibited acetylcholinesterase roughly corresponds to the reactivating efficacy of obidoxime. On the other hand, the oxime HI-6 was found to be the most efficient reactivator of sarin-inhibited acetylcholinesterase. While the oxime HI-6 was able to reduce the acute toxicity of sarin >3 times, both novel oximes and obidoxime decreased the acute toxicity of sarin <2 times. Based on the results, we can conclude that the reactivating and therapeutic efficacy of both novel oximes K727 and K733 is significantly lower compared to the oxime HI-6 and, therefore, they are not suitable for the replacement of the oxime HI-6 for the antidotal treatment of acute sarin poisoning.

Human Carboxylesterase 1 Stereoselectively Binds the Nerve Agent Cyclosarin and Spontaneously Hydrolyzes the Nerve Agent Sarin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemmert, Andrew C.; Otto, Tamara C.; Wierdl, Monika

Organophosphorus (OP) nerve agents are potent toxins that inhibit cholinesterases and produce a rapid and lethal cholinergic crisis. Development of protein-based therapeutics is being pursued with the goal of preventing nerve agent toxicity and protecting against the long-term side effects of these agents. The drug-metabolizing enzyme human carboxylesterase 1 (hCE1) is a candidate protein-based therapeutic because of its similarity in structure and function to the cholinesterase targets of nerve agent poisoning. However, the ability of wild-type hCE1 to process the G-type nerve agents sarin and cyclosarin has not been determined. We report the crystal structure of hCE1 in complex withmore » the nerve agent cyclosarin. We further use stereoselective nerve agent analogs to establish that hCE1 exhibits a 1700- and 2900-fold preference for the P{sub R} enantiomers of analogs of soman and cyclosarin, respectively, and a 5-fold preference for the P{sub S} isomer of a sarin analog. Finally, we show that for enzyme inhibited by racemic mixtures of bona fide nerve agents, hCE1 spontaneously reactivates in the presence of sarin but not soman or cyclosarin. The addition of the neutral oxime 2,3-butanedione monoxime increases the rate of reactivation of hCE1 from sarin inhibition by more than 60-fold but has no effect on reactivation with the other agents examined. Taken together, these data demonstrate that hCE1 is only reactivated after inhibition with the more toxic P{sub S} isomer of sarin. These results provide important insights toward the long-term goal of designing novel forms of hCE1 to act as protein-based therapeutics for nerve agent detoxification.« less

Computational Simulation of Vibrational Overtone Spectral Regions: Sarin

DTIC Science & Technology

2006-12-01

level have been used to determine the vapour phase local mode parameters, [ and Dx, for each oscillator in the two spectrally significant conformers...approach to spectral simulation reported herein should be undertaken by acquiring the experimental spectral regions of several CWAs in the vapour and liquid...33 viii DRDC Suffield TR 2006-220 List of figures Figure 1: The vapour phase structures of the three lowest energy conformers of sarin, calculated

Low Dose Sarin Leads To Murine Cardiac Dysfunction

DTIC Science & Technology

2010-03-01

work directly supported a grant held by Wright State University, grant # GW060050, from the United States Army Medical Research Acquisition Activity ...GB), acts as an irreversible AChE inhibitor. Sarin reacts with the serine hydroxyl residue in the active site of AChE to form a phosphate or...United States Air Force has become increasingly engaged with terrorist groups and other elusive enemies. As these activities increase, the potential for

A System Dynamics Approach to the Efficacy of Oxime Therapy in Sub Lethal Exposure to Sarin Gas

DTIC Science & Technology

2015-06-18

effective treatments , including antidotes, is considered to contribute to this high mortality rate (Buckley et al., 2004:1231). The efficacy of current...officials to reduce the risk associated with high -consequence threats”. Nerve agents, such as Sarin gas, are considered high consequence threats...The threat of use of agents such as Sarin is as much a threat today as any other time in our history. However, the suggested treatment protocol is

Chiral separation of G-type chemical warfare nerve agents via analytical supercritical fluid chromatography.

PubMed

Kasten, Shane A; Zulli, Steven; Jones, Jonathan L; Dephillipo, Thomas; Cerasoli, Douglas M

2014-12-01

Chemical warfare nerve agents (CWNAs) are extremely toxic organophosphorus compounds that contain a chiral phosphorus center. Undirected synthesis of G-type CWNAs produces stereoisomers of tabun, sarin, soman, and cyclosarin (GA, GB, GD, and GF, respectively). Analytical-scale methods were developed using a supercritical fluid chromatography (SFC) system in tandem with a mass spectrometer for the separation, quantitation, and isolation of individual stereoisomers of GA, GB, GD, and GF. Screening various chiral stationary phases (CSPs) for the capacity to provide full baseline separation of the CWNAs revealed that a Regis WhelkO1 (SS) column was capable of separating the enantiomers of GA, GB, and GF, with elution of the P(+) enantiomer preceding elution of the corresponding P(-) enantiomer; two WhelkO1 (SS) columns had to be connected in series to achieve complete baseline resolution. The four diastereomers of GD were also resolved using two tandem WhelkO1 (SS) columns, with complete baseline separation of the two P(+) epimers. A single WhelkO1 (RR) column with inverse stereochemistry resulted in baseline separation of the GD P(-) epimers. The analytical methods described can be scaled to allow isolation of individual stereoisomers to assist in screening and development of countermeasures to organophosphorus nerve agents. © 2014 The Authors. Chirality published by John Wiley Periodicals, Inc.

Chiral Separation of G-type Chemical Warfare Nerve Agents via Analytical Supercritical Fluid Chromatography

PubMed Central

Kasten, Shane A; Zulli, Steven; Jones, Jonathan L; Dephillipo, Thomas; Cerasoli, Douglas M

2014-01-01

Chemical warfare nerve agents (CWNAs) are extremely toxic organophosphorus compounds that contain a chiral phosphorus center. Undirected synthesis of G-type CWNAs produces stereoisomers of tabun, sarin, soman, and cyclosarin (GA, GB, GD, and GF, respectively). Analytical-scale methods were developed using a supercritical fluid chromatography (SFC) system in tandem with a mass spectrometer for the separation, quantitation, and isolation of individual stereoisomers of GA, GB, GD, and GF. Screening various chiral stationary phases (CSPs) for the capacity to provide full baseline separation of the CWNAs revealed that a Regis WhelkO1 (SS) column was capable of separating the enantiomers of GA, GB, and GF, with elution of the P(+) enantiomer preceding elution of the corresponding P(–) enantiomer; two WhelkO1 (SS) columns had to be connected in series to achieve complete baseline resolution. The four diastereomers of GD were also resolved using two tandem WhelkO1 (SS) columns, with complete baseline separation of the two P(+) epimers. A single WhelkO1 (RR) column with inverse stereochemistry resulted in baseline separation of the GD P(–) epimers. The analytical methods described can be scaled to allow isolation of individual stereoisomers to assist in screening and development of countermeasures to organophosphorus nerve agents. Chirality 26:817–824, 2014. © 2014 The Authors. Chirality published by John Wiley Periodicals, Inc. PMID:25298066

Multiple animal studies for medical chemical defense program in soldier/patient decontamination and drug development on task 85-17: Validation of an analytical method for the detection of soman (GD), mustard (HD), tabun (GA), and VX in wastewater samples. Final report, 13 October 1985-1 January 1989

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joiner, R.L.; Hayes, L.; Rust, W.

1989-05-01

The following report summarizes the development and validation of an analytical method for the analyses of soman (GD), mustard (HD), VX, and tabun (GA) in wastewater. The need for an analytical method that can detect GD, HD, VX, and GA with the necessary sensitivity (< 20 parts per billion (PPB))and selectivity is essential to Medical Research and Evaluation Facility (MREF) operations. The analytical data were generated using liquid-liquid extraction of the wastewater, with the extract being concentrated and analyzed by gas chromatography (GC) methods. The sample preparation and analyses methods were developed in support of ongoing activities within the MREF.more » We have documented the precision and accuracy of the analytical method through an expected working calibration range (3.0 to 60 ppb). The analytical method was statistically evaluated over a range of concentrations to establish a detection limit and quantitation limit for the method. Whenever the true concentration is 8.5 ppb or above, the probability is at least 99.9 percent that the measured concentration will be ppb or above. Thus, 6 ppb could be used as a lower reliability limit for detecting concentrations in excess of 8.5 ppb. In summary, the proposed sample extraction and analyses methods are suitable for quantitative analyses to determine the presence of GD, HD, VX, and GA in wastewater samples. Our findings indicate that we can detect any of these chemical surety materiel (CSM) in water at or below the established U.S. Army Surgeon General's safety levels in drinking water.« less

Evaluation of CryoSat-2 SARIn vs. SAR Arctic Sea Ice Freeboard

NASA Astrophysics Data System (ADS)

Di Bella, A.; Skourup, H.; Forsberg, R.

2017-12-01

Earth climate is a complex system which behaviour is dictated by the interaction among many components. Sea ice, one of these fundamental components, interacts directly with the oceans and the atmosphere playing an important role in defining heat exchange processes and, thus, impacting weather patterns on a global scale. Sea ice thickness estimates have notably improved in the last couple of decades, however, the uncertainty of such estimates is still significant. For the past 7 years, the ESA CryoSat-2 (CS2) mission has provided a unique opportunity to observe polar regions due to its extended coverage up to 88° N/S. The SIRAL radar altimeter on board CS2 enables the sea ice community to estimate sea ice thickness by measuring the sea ice freeboard. Studies by Armitage and Davidson [2014] and Di Bella et al. [submitted] showed that the interferometric capabilities of SIRAL can be used to retrieve an increased number of valid sea surface heights in sea ice covered regions and thus reduce the random uncertainty of the estimated freeboards, especially in areas with a sparse lead distribution. This study focuses on the comparison between sea ice freeboard estimates obtained by processing L1B SARIn data inside the Wingham box - an area in the Arctic Ocean where SIRAL has acquired SARIn data for 4 years - and those obtained by processing L1B SAR data in the area surrounding the box. This comparison evaluates CS2 performance on Arctic sea ice from a statistical perspective by analysing the continuity of freeboard estimates in areas where SIRAL switches between SAR and SARIn acquisition modes. Data collected during the Operation IceBridge and CryoVEx field campaigns are included in the study as an additional validation. Besides investigating the possibility of including the phase information from SIRAL in currently available freeboard estimates, this results provide valuable information for a possible SARIn CryoSat follow-on mission.

Generation and evaluation of Cryosat-2 SARIn L1b Interferometric elevation

NASA Astrophysics Data System (ADS)

DONG, Y.; Zhang, K.; Liu, Q.; MA, J.; WANG, J.

2016-12-01

CryoSat-2 radar altimeter data have successfully used in mapping surface elevations of ice caps and ice sheets, finding the change of surface height in polar area. The SARIn mode of Synthetic Aperture Interferometric Altimeter (SIRAL), which working similar with the traditional Interferometric Synthetic Aperture Radar (IFSAR) method, can improve the across- and along-track resolution by IFSAR processing algorithm. In this study, three L1b Baseline-C SARIn tracks over the Filchner ice shelf are used to generate the location and height of ground points in sloping glacial terrain. The elevation data is mapped and validated with IceBridge Airborne Topographic Mapper (ATM) data acquired at Nov. 2, 2012. The comparison with ATM data shows a mean difference of -1.91 m with a stand deviation of 4.04 m.

Using Metal Complex Ion-Molecule Reactions in a Miniature Rectilinear Ion Trap Mass Spectrometer to Detect Chemical Warfare Agents

NASA Astrophysics Data System (ADS)

Graichen, Adam M.; Vachet, Richard W.

2013-06-01

The gas-phase reactions of a series of coordinatively unsaturated [Ni(L)n]y+ complexes, where L is a nitrogen-containing ligand, with chemical warfare agent (CWA) simulants in a miniature rectilinear ion trap mass spectrometer were investigated as part of a new approach to detect CWAs. Results show that upon entering the vacuum system via a poly(dimethylsiloxane) (PDMS) membrane introduction, low concentrations of several CWA simulants, including dipropyl sulfide (simulant for mustard gas), acetonitrile (simulant for the nerve agent tabun), and diethyl phosphite (simulant for nerve agents sarin, soman, tabun, and VX), can react with metal complex ions generated by electrospray ionization (ESI), thereby providing a sensitive means of detecting these compounds. The [Ni(L)n]2+ complexes are found to be particularly reactive with the simulants of mustard gas and tabun, allowing their detection at low parts-per-billion (ppb) levels. These detection limits are well below reported exposure limits for these CWAs, which indicates the applicability of this new approach, and are about two orders of magnitude lower than electron ionization detection limits on the same mass spectrometer. The use of coordinatively unsaturated metal complexes as reagent ions offers the possibility of further tuning the ion-molecule chemistry so that desired compounds can be detected selectively or at even lower concentrations.

Sarin Exposures in A Cohort of British Military Participants in Human Experimental Research at Porton Down 1945-1987.

PubMed

Keegan, Thomas J; Carpenter, Lucy M; Brooks, Claire; Langdon, Toby; Venables, Katherine M

2017-12-15

The effects of exposure to chemical warfare agents in humans are topical. Porton Down is the UK's centre for research on chemical warfare where, since WWI, a programme of experiments involving ~30000 participants drawn from the UK armed services has been undertaken. Our aim is to report on exposures to nerve agents, particularly sarin, using detailed exposure data not explored in a previous analysis. In this paper, we have used existing data on exposures to servicemen who attended the human volunteer programme at Porton Down to examine exposures to nerve agents in general and to sarin in particular. Six principal nerve agents were tested on humans between 1945 and 1987. Of all 4299 nerve agent tests recorded, 3511 (82%) were with sarin, most commonly in an exposure chamber, with inhalation being the commonest exposure route (85%). Biological response to sarin exposure was expressed as percentage change in cholinesterase activity and, less commonly, change in pupil size. For red blood cell cholinesterase, median inhibition for inhalation tests was 41% (interquartile range 28-51%), with a maximum of 87%. For dermal exposures the maximum inhibition recorded was 99%. There was a clear association between increasing exposure to sarin and depression of cholinesterase activity but the strength and direction of the association varied by exposure route and the presence of chemical or physical protection. Pupil size decreased with increased exposure but this relationship was less clear when modifiers, such as atropine drops, were present. These results, drawn from high quality experimental data, offer a unique insight into the effects of these chemical agents on humans. © The Author 2017. Published by Oxford University Press on behalf of the British Occupational Hygiene Society.

Protection against soman and sarin exposure by transdermal physostigmine and scopolamine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshulam, Y.; Davidovici, R.; Levy, A.

1993-05-13

The purpose of this study was to evaluate the prophylactic efficacy of physostigmine (physo), administered via sustained release (SR) methods, with and without scopolamine, against soman and sarin exposure in guinea-pigs. Transdermal physo pad (3 sq cm/kg; 60-80 ug/sq cm), containing a vehicle based on propionic acid, was applied onto the dorsal back of the animals, 24 hours before exposure to the cholinesterase (ChE) inhibitors. At the time of exposure, physo concentrations in brain and plasma were 3.6 ng/g and 4.1 ng/ml respectively. Brain and whole blood ChE activity were inhibited to 70% and 57% of their original activity. Transdermalmore » physo by itself protected up to 70% of the animals exposed to 1.5 LD(50) of soman or sarin (100% mortality was recorded in the control group). Combining transdermal physo with Scopoderm (by Ciba Geigy Inc.) provided full protection against 1.5 LD(50).« less

Infrared signature of micro-hydration in the organophosphate sarin: An ab initio study

DOE PAGES

Alam, Todd M.; Pearce, Charles Joseph

2015-06-28

The infrared (IR) spectra of micro-hydrated Sarin•(H 2O) n clusters containing between one and four explicit waters have been studied using ab initio density functional theory (DFT) methods. The phosphate group P=O bond vibration region (~1270 to 1290 cm –1) revealed the largest frequency variation with hydration, with a frequency red shift reflecting the direct hydrogen bond formation between the P=O of Sarin and water. Small variations to the P-F stretch (~810 to 815 cm –1) and the C-O-P vibrational modes (~995 to 1004 cm –1) showed that the water interactions with these functional groups were minor, and that themore » structures of Sarin were not extensively perturbed in the hydrated complexes. Increasing the number of explicit hydration waters produced only small vibrational changes in the lowest free energy complexes. These minor changes were consistent with a single water-phosphate hydrogen bond being the dominant structure, though a second water-phosphate hydrogen bond was observed in some complexes and was identified by an additional red shift of the P=O bond vibration. As a result, the H 2O•H 2O vibrational modes (~3450 to 3660 cm –1) increased in complexity with higher hydration levels and reflect the extended hydrogen bonding networks formed between the explicit waters in the hydrated Sarin clusters.« less

Natural Detoxification Capacity to Inactivate Nerve Agents Sarin and VX in the Rat Blood.

PubMed

Bajgar, Jiří; Cabal, Jiří; Kassa, Jiří; Pavlík, Michal

2015-01-01

The method of continual determination of the rat blood cholinesterase activity was developed to study the changes of the blood cholinesterases following different intervetions. The aim of this study is registration of cholinesterase activity in the rat blood and its changes to demonstrate detoxification capacity of rats to inactivate sarin or VX in vivo. The groups of female rats were premedicated (ketamine and xylazine) and cannulated to a. femoralis. Continual blood sampling (0.02 ml/min) and monitoring of the circulating blood cholinesterase activity were performed. Normal activity was monitored 1-2 min and then the nerve agent was administered i.m. (2×LD50). Using different time intervals of the leg compression and relaxation following the agent injection, cholinesterase activity was monitored and according to the inhibition obtained, detoxification capacity was assessed. Administration of sarin to the leg, then 1 and 5 min compression and 20 min later relaxation showed that further inhibition in the blood was not observed. On the other hand, VX was able to inhibit blood cholinesterases after this intervention. The results demonstrated that sarin can be naturally detoxified on the contrary to VX. Described method can be used as model for other studies dealing with changes of cholinesterases in the blood following different factors.

Vesicants and nerve agents in chemical warfare. Decontamination and treatment strategies for a changed world.

PubMed

Devereaux, Asha; Amundson, Dennis E; Parrish, J S; Lazarus, Angeline A

2002-10-01

Vesicants and nerve agents have been used in chemical warfare for ages. They remain a threat in today's altered political climate because they are relatively simple to produce, transport, and deploy. Vesicants, such as mustard and lewisite, can affect the skin, eyes, respiratory system, and gastrointestinal system. They leave affected persons at risk for long-term effects. Nerve agents, such as tabun, sarin, soman, and VX, hyperstimulate the muscarinic and nicotinic receptors of the nervous system. Physicians need to familiarize themselves with the clinical findings of such exposures and the decontamination and treatment strategies necessary to minimize injuries and deaths.

Unexpected nerve gas exposure in the city of Matsumoto: report of rescue activity in the first sarin gas terrorism.

PubMed

Okudera, H; Morita, H; Iwashita, T; Shibata, T; Otagiri, T; Kobayashi, S; Yanagisawa, N

1997-09-01

This report describes the rescue activities and the exposure of rescue and hospital personnel from the first unexpected nerve gas terrorist attack using sarin (isopropyl methylphophonofluoridate) in the city of Matsumoto at midnight on June 27, 1994. The details of the emergency activities in the disaster were studied based on the records from emergency departments of the affiliated hospitals and records from the firehouse. About 600 people, including residents and rescue staff, were exposed to sarin gas. Fifty-eight residents were admitted to hospitals, and 7 died. Among 95 rescuers and the duty doctor from the doctor car, 8 had mild symptoms of poisoning. All the rescue activity took place without gas masks or decontamination procedures. In this case of unexpected mass exposure to sarin gas, the emergency rescue system for a large disaster in Matsumoto city, which had been established for a conflagration or a local earthquake, was effective.

Effective countermeasure against poisoning by organophosphorus insecticides and nerve agents.

PubMed

Albuquerque, Edson X; Pereira, Edna F R; Aracava, Yasco; Fawcett, William P; Oliveira, Maristela; Randall, William R; Hamilton, Tracey A; Kan, Robert K; Romano, James A; Adler, Michael

2006-08-29

The nerve agents soman, sarin, VX, and tabun are deadly organophosphorus (OP) compounds chemically related to OP insecticides. Most of their acute toxicity results from the irreversible inhibition of acetylcholinesterase (AChE), the enzyme that inactivates the neurotransmitter acetylcholine. The limitations of available therapies against OP poisoning are well recognized, and more effective antidotes are needed. Here, we demonstrate that galantamine, a reversible and centrally acting AChE inhibitor approved for treatment of mild to moderate Alzheimer's disease, protects guinea pigs from the acute toxicity of lethal doses of the nerve agents soman and sarin, and of paraoxon, the active metabolite of the insecticide parathion. In combination with atropine, a single dose of galantamine administered before or soon after acute exposure to lethal doses of soman, sarin, or paraoxon effectively and safely counteracted their toxicity. Doses of galantamine needed to protect guinea pigs fully against the lethality of OPs were well tolerated. In preventing the lethality of nerve agents, galantamine was far more effective than pyridostigmine, a peripherally acting AChE inhibitor, and it was less toxic than huperzine, a centrally acting AChE inhibitor. Thus, a galantamine-based therapy emerges as an effective and safe countermeasure against OP poisoning.

Effective countermeasure against poisoning by organophosphorus insecticides and nerve agents

PubMed Central

Albuquerque, Edson X.; Pereira, Edna F. R.; Aracava, Yasco; Fawcett, William P.; Oliveira, Maristela; Randall, William R.; Hamilton, Tracey A.; Kan, Robert K.; Romano, James A.; Adler, Michael

2006-01-01

The nerve agents soman, sarin, VX, and tabun are deadly organophosphorus (OP) compounds chemically related to OP insecticides. Most of their acute toxicity results from the irreversible inhibition of acetylcholinesterase (AChE), the enzyme that inactivates the neurotransmitter acetylcholine. The limitations of available therapies against OP poisoning are well recognized, and more effective antidotes are needed. Here, we demonstrate that galantamine, a reversible and centrally acting AChE inhibitor approved for treatment of mild to moderate Alzheimer’s disease, protects guinea pigs from the acute toxicity of lethal doses of the nerve agents soman and sarin, and of paraoxon, the active metabolite of the insecticide parathion. In combination with atropine, a single dose of galantamine administered before or soon after acute exposure to lethal doses of soman, sarin, or paraoxon effectively and safely counteracted their toxicity. Doses of galantamine needed to protect guinea pigs fully against the lethality of OPs were well tolerated. In preventing the lethality of nerve agents, galantamine was far more effective than pyridostigmine, a peripherally acting AChE inhibitor, and it was less toxic than huperzine, a centrally acting AChE inhibitor. Thus, a galantamine-based therapy emerges as an effective and safe countermeasure against OP poisoning. PMID:16914529

Propagation of damage in the rat brain following sarin exposure: Differential progression of early processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazar, Shlomi; Egoz, Inbal; Brandeis, Rachel

Sarin is an irreversible organophosphate cholinesterase inhibitor and a highly toxic warfare agent. Following the overt, dose-dependent signs (e.g. tremor, hyper secretion, seizures, respiratory depression and eventually death), brain damage is often reported. The goal of the present study was to characterize the early histopathological and biochemical events leading to this damage. Rats were exposed to 1LD50 of sarin (80 μg/kg, i.m.). Brains were removed at 1, 2, 6, 24 and 48 h and processed for analysis. Results showed that TSPO (translocator protein) mRNA increased at 6 h post exposure while TSPO receptor density increased only at 24 h. Inmore » all brain regions tested, bax mRNA decreased 1 h post exposure followed by an increase 24 h later, with only minor increase in bcl2 mRNA. At this time point a decrease was seen in both anti-apoptotic protein Bcl2 and pro-apoptotic Bax, followed by a time and region specific increase in Bax. An immediate elevation in ERK1/2 activity with no change in JNK may indicate an endogenous “first response” mechanism used to attenuate the forthcoming apoptosis. The time dependent increase in the severity of brain damage included an early bi-phasic activation of astrocytes, a sharp decrease in intact neuronal cells, a time dependent reduction in MAP2 and up to 15% of apoptosis. Thus, neuronal death is mostly due to necrosis and severe astrocytosis. The data suggests that timing of possible treatments should be determined by early events following exposure. For example, the biphasic changes in astrocytes activity indicate a possible beneficial effects of delayed anti-inflammatory intervention. - Highlights: • The severity of brain damage post 1LD50 sarin exposure is time dependent. • Sarin induce differential progression of early processes in the rat brain. • Potential treatments should be timed according to early events following exposure. • The biphasic astrocytes activity suggests a delay in anti

CryoSat-2 SAR and SARin Inland Water Heights from the CRUCIAL project

NASA Astrophysics Data System (ADS)

Benveniste, J.; Restano, M.; Ambrózio, A.; Moore, P.; Birkinshaw, S.

2017-12-01

CRUCIAL was an ESA/STSE funded project investigating innovative land and inland water applications from CryoSat-2 with a forward-look component to the Sentinel-3 and Jason-CS/Sentinel-6 missions. The high along-track sampling of CryoSat-2 in its SAR and SARin modes offers the opportunity to recover high frequency signals over inland waters. A methodology was developed to process the FBR L1A Doppler beams to form a waveform product using ground cell gridding, beam steering and beam stacking. Inland water heights from CryoSat-2 are derived by using a set of empirical retrackers formulated for inland water applications. Results of the processing strategy include a comparison of waveforms and heights from the burst echoes (80 m along-track) and from multi-look waveforms (320 m along-track). SAR and SARin FBR data are available for the Amazon, Brahmaputra and Mekong for 2011-2015. FBR SAR results are compared against stage data from the nearest gauge. Heights from Tonlé Sap are also compared against Jason-2 data from the United States Department of Agriculture. A strategy to select the number of multi-looks over rivers was designed based on the rms of heights across Tonlé Sap. Comparisons include results from the empirical retrackers and from waveforms and heights obtained via ESA's Grid Processing on Demand (G-POD/SARvatore) using the SAMOSA2 retracker. Results of FBR SARin processing for the Amazon and Brahmaputra are presented including comparison of heights from the two antennae, extraction of slope of the ground surface and validation against ground data where appropriate.

CryoSat Level1b SAR/SARin BaselineC: Product Format and Algorithm Improvements

NASA Astrophysics Data System (ADS)

Scagliola, Michele; Fornari, Marco; Di Giacinto, Andrea; Bouffard, Jerome; Féménias, Pierre; Parrinello, Tommaso

2015-04-01

CryoSat was launched on the 8th April 2010 and is the first European ice mission dedicated to the monitoring of precise changes in the thickness of polar ice sheets and floating sea ice. Cryosat carries an innovative radar altimeter called the Synthetic Aperture Interferometric Altimeter (SIRAL), that transmits pulses at a high pulse repetition frequency thus making the received echoes phase coherent and suitable for azimuth processing. This allows to reach a significantly improved along track resolution with respect to traditional pulse-width limited altimeters. CryoSat is the first altimetry mission operating in SAR mode and continuous improvements in the Level1 Instrument Processing Facility (IPF1) are being identified, tested and validated in order to improve the quality of the Level1b products. The current IPF, Baseline B, was released in operation in February 2012. A reprocessing campaign followed, in order to reprocess the data since July 2010. After more than 2 years of development, the release in operations of Baseline C is expected in the first half of 2015. BaselineC Level1b products will be distributed in an updated format, including for example the attitude information (roll, pitch and yaw) and, for SAR/SARIN, the waveform length doubled with respect to Baseline B. Moreveor, various algorithm improvements have been identified: • a datation bias of about -0.5195 ms will be corrected (SAR/SARIn) • a range bias of about 0.6730 m will be corrected (SAR/SARIn) • a roll bias of 0.1062 deg and a pitch bias of 0.0520 deg • Surface sample stack weighting to filter out the single look echoes acquired at highest look angle, that results in a sharpening of the 20Hz waveforms With the operational release of BaselineC, the second CryoSat reprocessing campaign will be initiated, taking benefit of the upgrade implemented in the IPF1 processing chain but also at IPF2 level. The reprocessing campaign will cover the full Cryosat mission starting on 16th July 2010

Revealing the importance of linkers in K-series oxime reactivators for tabun-inhibited AChE using quantum chemical, docking and SMD studies.

PubMed

Ghosh, Shibaji; Chandar, Nellore Bhanu; Jana, Kalyanashis; Ganguly, Bishwajit

2017-08-01

Inhibition of acetylcholinesterase (AChE) with organophosphorus compounds has a detrimental effect on human life. Oxime K203 seems to be one of the promising reactivators for tabun-inhibited AChE than (K027, K127, and K628). These reactivators differ only in the linker units between the two pyridinium rings. The conformational analyses performed with quantum chemical RHF/6-31G* level for K027, K127, K203 and K628 showed that the minimum energy conformers have different orientations of the active and peripheral pyridinium rings for these reactivator molecules. K203 with (-CH 2 -CH=CH-CH 2 -) linker unit possesses more open conformation compared to the other reactivators. Such orientation of K203 experiences favorable interaction with the surrounding residues of catalytic anionic site (CAS) and peripheral anionic site (PAS) of tabun-inhibited AChE. From the steered molecular dynamics simulations, it has been observed that the oxygen atom of the oxime group of K203 reactivator approaches nearest to the P-atom of the SUN203 (3.75 Å) at lower time scales (less than ~1000 ps) as compared to the other reactivators. K203 experiences less number of hydrophobic interaction with the PAS residues which is suggested to be an important factor for the efficient reactivation process. In addition, K203 crates large number of H-bonding with CAS residues SUN203, Phe295, Tyr337, Phe338 and His447. K203 barely changes its conformation during the SMD simulation process and hence the energy penalty to adopt any other conformation is minimal in this case as compared to the other reactivators. The molecular mechanics and Poisson-Boltzmann surface area binding energies obtained for the interaction of K203 inside the gorge of tabun inhibited AChE is substantially higher (-290.2 kcal/mol) than the corresponding K628 reactivator (-260.4 kcal/mol), which also possess unsaturated aromatic linker unit.

Revealing the importance of linkers in K-series oxime reactivators for tabun-inhibited AChE using quantum chemical, docking and SMD studies

NASA Astrophysics Data System (ADS)

Ghosh, Shibaji; Chandar, Nellore Bhanu; Jana, Kalyanashis; Ganguly, Bishwajit

2017-08-01

Inhibition of acetylcholinesterase (AChE) with organophosphorus compounds has a detrimental effect on human life. Oxime K203 seems to be one of the promising reactivators for tabun-inhibited AChE than (K027, K127, and K628). These reactivators differ only in the linker units between the two pyridinium rings. The conformational analyses performed with quantum chemical RHF/6-31G* level for K027, K127, K203 and K628 showed that the minimum energy conformers have different orientations of the active and peripheral pyridinium rings for these reactivator molecules. K203 with (-CH2-CH=CH-CH2-) linker unit possesses more open conformation compared to the other reactivators. Such orientation of K203 experiences favorable interaction with the surrounding residues of catalytic anionic site (CAS) and peripheral anionic site (PAS) of tabun-inhibited AChE. From the steered molecular dynamics simulations, it has been observed that the oxygen atom of the oxime group of K203 reactivator approaches nearest to the P-atom of the SUN203 (3.75 Å) at lower time scales (less than 1000 ps) as compared to the other reactivators. K203 experiences less number of hydrophobic interaction with the PAS residues which is suggested to be an important factor for the efficient reactivation process. In addition, K203 crates large number of H-bonding with CAS residues SUN203, Phe295, Tyr337, Phe338 and His447. K203 barely changes its conformation during the SMD simulation process and hence the energy penalty to adopt any other conformation is minimal in this case as compared to the other reactivators. The molecular mechanics and Poisson-Boltzmann surface area binding energies obtained for the interaction of K203 inside the gorge of tabun inhibited AChE is substantially higher (-290.2 kcal/mol) than the corresponding K628 reactivator (-260.4 kcal/mol), which also possess unsaturated aromatic linker unit.

Role of water in aging of human butyrylcholinesterase inhibited by echothiophate: the crystal structure suggests two alternative mechanisms of aging.

PubMed

Nachon, Florian; Asojo, Oluwatoyin A; Borgstahl, Gloria E O; Masson, Patrick; Lockridge, Oksana

2005-02-01

Organophosphorus poisons (OP) bind covalently to the active-site serine of cholinesterases. The inhibited enzyme can usually be reactivated with powerful nucleophiles such as oximes. However, the covalently bound OP can undergo a suicide reaction (termed aging) yielding nonreactivatable enzyme. In human butyrylcholinesterase (hBChE), aging involves the residues His438 and Glu197 that are proximal to the active-site serine (Ser198). The mechanism of aging is known in detail for the nerve gases soman, sarin, and tabun as well as the pesticide metabolite isomalathion. Aging of soman- and sarin-inhibited acetylcholinesterase occurs by C-O bond cleavage, whereas that of tabun- and isomalathion-inhibited acetylcholinesterase occurs by P-N and P-S bond cleavage, respectively. In this work, the crystal structures of hBChE inhibited by the ophthalmic reagents echothiophate (nonaged and aged) and diisopropylfluorophosphate (aged) were solved and refined to 2.1, 2.25, and 2.2 A resolution, respectively. No appreciable shift in the position of the catalytic triad histidine was observed between the aged and nonaged conjugates of hBChE. This absence of shift contrasts with the aged and nonaged crystal structures of Torpedo californica acetylcholinesterase inhibited by the nerve agent VX. The nonaged hBChE structure shows one water molecule interacting with Glu197 and the catalytic triad histidine (His438). Interestingly, this water molecule is ideally positioned to promote aging by two mechanisms: breaking either a C-O bond or a P-O bond. Pesticides and certain stereoisomers of nerve agents are expected to undergo aging by breaking the P-O bond.

The inhibition, reactivation and mechanism of VX-, sarin-, fluoro-VX and fluoro-sarin surrogates following their interaction with HuAChE and HuBuChE.

PubMed

Chao, Chih-Kai; Balasubramanian, Narayanaganesh; Gerdes, John M; Thompson, Charles M

2018-06-16

In this study, the mechanisms of HuAChE and HuBChE inhibition by Me-P(O) (OPNP) (OR) [PNP = p-nitrophenyl; R = CH 2 CH 3 , CH 2 CH 2 F, OCH(CH 3 ) 2 , OCH(CH 3 ) (CH 2 F)] representing surrogates and fluoro-surrogates of VX and sarin were studied by in vitro kinetics and mass spectrometry. The in vitro measures showed that the VX- and fluoro-VX surrogates were relatively strong inhibitors of HuAChE and HuBChE (k i  ∼ 10 5 -10 6  M -1 min -1 ) and underwent spontaneous and 2-PAM-mediated reactivation within 30 min. The sarin surrogates were weaker inhibitors of HuAChE and HuBChE (k i  ∼ 10 4 -10 5  M -1 min -1 ), and in general did not undergo spontaneous reactivation, although HuAChE adducts were partially reactivatable at 18 h using 2-PAM. The mechanism of HuAChE and HuBChE inhibition by the surrogates was determined by Q-TOF and MALDI-TOF mass spectral analyses. The surrogate-adducted proteins were trypsin digested and the active site-containing peptide bearing the OP-modified serine identified by Q-TOF as triply- and quadruply-charged ions representing the respective increase in mass of the attached OP moiety. Correspondingly, monoisotopic ions of the tryptic peptides representing the mass increase of the OP-adducted peptide was identified by MALDI-TOF. The mass spectrometry analyses validated the identity of the OP moiety attached to HuAChE or HuBChE as MeP(O) (OR)-O-serine peptides (loss of the PNP leaving group) via mechanisms consistent with those found with chemical warfare agents. MALDI-TOF MS analyses of the VX-modified peptides versus time showed a steady reduction in adduct versus parent peptide (reactivation), whereas the sarin-surrogate-modified peptides remained largely intact over the course of the experiment (24 h). Overall, the presence of a fluorine atom on the surrogate modestly altered the rate constants of inhibition and reactivation, however, the mechanism of inhibition (ejection of PNP group) did not change

Probing the reactivation process of sarin-inhibited acetylcholinesterase with α-nucleophiles: hydroxylamine anion is predicted to be a better antidote with DFT calculations.

PubMed

Khan, Md Abdul Shafeeuulla; Lo, Rabindranath; Bandyopadhyay, Tusar; Ganguly, Bishwajit

2011-08-01

Inactivation of acetylcholinesterase (AChE) due to inhibition by organophosphorus (OP) compounds is a major threat to human since AChE is a key enzyme in neurotransmission process. Oximes are used as potential reactivators of OP-inhibited AChE due to their α-effect nucleophilic reactivity. In search of more effective reactivating agents, model studies have shown that α-effect is not so important for dephosphylation reactions. We report the importance of α-effect of nucleophilic reactivity towards the reactivation of OP-inhibited AChE with hydroxylamine anion. We have demonstrated with DFT [B3LYP/6-311G(d,p)] calculations that the reactivation process of sarin-serine adduct 2 with hydroxylamine anion is more efficient than the other nucleophiles reported. The superiority of hydroxylamine anion to reactivate the sarin-inhibited AChE with sarin-serine adducts 3 and 4 compared to formoximate anion was observed in the presence and absence of hydrogen bonding interactions of Gly121 and Gly122. The calculated results show that the rates of reactivation process of adduct 4 with hydroxylamine anion are 261 and 223 times faster than the formoximate anion in the absence and presence of such hydrogen bonding interactions. The DFT calculated results shed light on the importance of the adjacent carbonyl group of Glu202 for the reactivation of sarin-serine adduct, in particular with formoximate anion. The reverse reactivation reaction between hydroxylamine anion and sarin-serine adduct was found to be higher in energy compared to the other nucleophiles, which suggests that this α-nucleophile can be a good antidote agent for the reactivation process. Copyright © 2011 Elsevier Inc. All rights reserved.

Kinetics of degradation of sulfur mustard and sarin simulants on HKUST-1 metal organic framework.

PubMed

Roy, Anuradha; Srivastava, Avanish K; Singh, Beer; Shah, Dilip; Mahato, Timir Haran; Srivastava, Anchal

2012-10-28

The applicability of HKUST-1 for the degradation of sulfur mustard and sarin simulants was studied with and without coadsorbed water. Degradation was found to be via hydrolysis and dependent on the nucleophilic substitution reaction, vapour pressure and molecular diameter of the toxicants.

Hydrolysis of DFP and the Nerve Agent (S)-Sarin by DFPase Proceeds along Two Different Reaction Pathways: Implications for Engineering Bioscavengers

PubMed Central

2015-01-01

Organophosphorus (OP) nerve agents such as (S)-sarin are among the most highly toxic compounds that have been synthesized. Engineering enzymes that catalyze the hydrolysis of nerve agents (“bioscavengers”) is an emerging prophylactic approach to diminish their toxic effects. Although its native function is not known, diisopropyl fluorophosphatase (DFPase) from Loligo vulgaris catalyzes the hydrolysis of OP compounds. Here, we investigate the mechanisms of diisopropylfluorophosphate (DFP) and (S)-sarin hydrolysis by DFPase with quantum mechanical/molecular mechanical umbrella sampling simulations. We find that the mechanism for hydrolysis of DFP involves nucleophilic attack by Asp229 on phosphorus to form a pentavalent intermediate. P–F bond dissociation then yields a phosphoacyl enzyme intermediate in the rate-limiting step. The simulations suggest that a water molecule, coordinated to the catalytic Ca2+, donates a proton to Asp121 and then attacks the tetrahedral phosphoacyl intermediate to liberate the diisopropylphosphate product. In contrast, the calculated free energy barrier for hydrolysis of (S)-sarin by the same mechanism is highly unfavorable, primarily because of the instability of the pentavalent phosphoenzyme species. Instead, simulations suggest that hydrolysis of (S)-sarin proceeds by a mechanism in which Asp229 could activate an intervening water molecule for nucleophilic attack on the substrate. These findings may lead to improved strategies for engineering DFPase and related six-bladed β-propeller folds for more efficient degradation of OP compounds. PMID:24720808

Hydrolysis of DFP and the Nerve Agent (S)-Sarin by DFPase Proceeds Along Two Different Reaction Pathways: Implica-tions for Engineering Bioscavengers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wymore, Troy W; Langan, Paul; Smith, Jeremy C

Organophosphorus (OP) nerve agents such as (S)-sarin are among the most highly toxic compounds that have been synthesized. Engineering enzymes that catalyze the hydrolysis of nerve agents ( bioscavengers ) is an emerging prophylactic approach to diminishing their toxic effects. Although its native function is not known, diisopropyl fluorophosphatase (DFPase) from Loligo vulgaris catalyzes the hydrolysis of OP compounds. Here, we investigate the mechanisms of diisopropylfluorophosphate (DFP) and (S)-sarin hydrolysis by DFPase with quantum mechanical/molecular mechanical (QM/MM) umbrella sampling simulations. We find that the mechanism for hydrolysis of DFP involves nucleophilic attack by Asp229 on phosphorus to form a pentavalentmore » intermediate. P F bond dissociation then yields a phosphoacyl enzyme intermediate in the rate-limiting step. The simulations suggest that a water molecule, coordinated to the catalytic Ca2+, donates a proton to Asp121 and then attacks the tetrahedral phosphoacyl intermediate to liberate the diisopropylphosphate product. In contrast, the calculated free energy barrier for hydrolysis of (S)-sarin by the same mechanism is highly unfavorable, primarily due to the instability of the pentavalent phosphoenzyme species. Instead, simulations suggest that hydrolysis of (S)-sarin proceeds by a mechanism in which Asp229 could activate an intervening water molecule for nucleophilic attack on the substrate. These findings may lead to improved strategies for engineering DFPase and related six-bladed -propeller folds for more efficient degradation of OP compounds.« less

Extending injury prevention methodology to chemical terrorism preparedness: the Haddon Matrix and sarin.

PubMed

Varney, Shawn; Hirshon, Jon Mark; Dischinger, Patricia; Mackenzie, Colin

2006-01-01

The Haddon Matrix offers a classic epidemiological model for studying injury prevention. This methodology places the public health concepts of agent, host, and environment within the three sequential phases of an injury-producing incident-pre-event, event, and postevent. This study uses this methodology to illustrate how it could be applied in systematically preparing for a mass casualty disaster such as an unconventional sarin attack in a major urban setting. Nineteen city, state, federal, and military agencies responded to the Haddon Matrix chemical terrorism preparedness exercise and offered feedback in the data review session. Four injury prevention strategies (education, engineering, enforcement, and economics) were applied to the individual factors and event phases of the Haddon Matrix. The majority of factors identified in all phases were modifiable, primarily through educational interventions focused on individual healthcare providers and first responders. The Haddon Matrix provides a viable means of studying an unconventional problem, allowing for the identification of modifiable factors to decrease the type and severity of injuries following a mass casualty disaster such as a sarin release. This strategy could be successfully incorporated into disaster planning for other weapons attacks that could potentially cause mass casualties.

Mechanisms of Organophosphorus (OP) Injury: Sarin-Induced Hippocampal Gene Expression Changes and Pathway Perturbation

DTIC Science & Technology

2012-01-01

components of the endomembrane system, including endoplasmic reticulum (ER) and Golgi apparatus were significantly down-regulated. As a result of...impairment in dopaminergic functions (Lucot JB, personal communication). Interestingly, data on sarin exposures have shown inhibition of new memory...quite unexpected that the endoplasmic reticulum (ER) and Golgi apparatus , the subcellular organelles essential for processing (e.g., folding, post

Seasonal sea surface and sea ice signal in the fjords of Eastern Greenland from CryoSat-2 SARin altimetry

NASA Astrophysics Data System (ADS)

Abulaitijiang, Adili; Baltazar Andersen, Ole; Stenseng, Lars

2014-05-01

Cryosat-2 offers the first ever possibility to perform coastal altimetric studies using SAR-Interferometry. This enabled qualified measurements of sea surface height (SST) in the fjords in Greenland. Scoresbysund fjord on the east coast of Greenland is the largest fjord in the world which is also covered by CryoSat-2 SAR-In mask making it a good test region. Also, the tide gauge operated by DTU Space is sitting in Scoresbysund bay, which provides solid ground-based sea level variation records throughout the year. We perform an investigation into sea surface height variation since the start of the Cryosat-2 mission using SAR-In L1B data processed with baseline B processing. We have employed a new develop method for projecting all SAR-In observations in the Fjord onto a centerline up the Fjord. Hereby we can make solid estimates of the annual and (semi-) annual signal in sea level/sea ice freeboard within the Fjord. These seasonal height variations enable us to derive sea ice freeboard changes in the fjord from satellite altimetry. Derived sea level and sea-ice freeboard can be validated by comparison with the tide gauge observations for sea level and output from the Microwave Radiometer derived observations of sea ice freeboard developed at the Danish Meteorological Institute.

Rotational Spectrum of Sarin

NASA Astrophysics Data System (ADS)

Walker, A. R. Hight; Suenram, R. D.; Samuels, Alan; Jensen, James; Ellzy, Michael W.; Lochner, J. Michael; Zeroka, Daniel

2001-05-01

As part of an effort to examine the possibility of using molecular-beam Fourier-transform microwave spectroscopy to unambiguously detect and monitor chemical warfare agents, we report the first observation and assignment of the rotational spectrum of the nerve agent Sarin (GB) (Methylphosphonofluoridic acid 1-methyl-ethyl ester, CAS #107-44-8) at frequencies between 10 and 22 GHz. Only one of the two low-energy conformers of this organophosphorus compound (C4H10FO2P) was observed in the rotationally cold (Trot<2 K) molecular beam. The experimental asymmetric-rotor ground-state rotational constants of this conformer are A=2874.0710(9) MHz, B=1168.5776(4) MHz, C=1056.3363(4) MHz (Type A standard uncertainties are given, i.e., 1σ), as obtained from a least-squares analysis of 74 a-, b-, and c-type rotational transitions. Several of the transitions are split into doublets due to the internal rotation of the methyl group attached to the phosphorus. The three-fold-symmetry barrier to internal rotation estimated from these splittings is 677.0(4) cm-1. Ab initio electronic structure calculations using Hartree-Fock, density functional, and Moller-Plesset perturbation theories have also been made. The structure of the lowest-energy conformer determined from a structural optimization at the MP2/6-311G** level of theory is consistent with our experimental findings.

Assay techniques for detection of exposure to sulfur mustard, cholinesterase inhibitors, sarin, soman, GF, and cyanide. Technical bulletin

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1996-05-01

This technical bulletin provides analytical techniques to identify toxic chemical agents in urine or blood samples. It is intended to provide the clinician with laboratory tests to detect exposure to sulfur mustard, cholinesterase inhibitors, sarin, soman, GF, and cyanide.

Fine Ice Sheet margins topography from swath processing of CryoSat SARIn mode data

NASA Astrophysics Data System (ADS)

Gourmelen, N.; Escorihuela, M. J.; Shepherd, A.; Foresta, L.; Muir, A.; Briggs, K.; Hogg, A. E.; Roca, M.; Baker, S.; Drinkwater, M. R.

2014-12-01

Reference and repeat-observations of Glacier and Ice Sheet Margin (GISM) topography are critical to identify changes in ice thickness, provide estimates of mass gain or loss and thus quantify the contribution of the cryosphere to sea level change. The lack of such sustained observations was identified in the Integrated Global Observing Strategy (IGOS) Cryosphere Theme Report as a major shortcoming. Conventional altimetry measurements over GISMs exist, but coverage has been sparse and characterized by coarse ground resolution. Additionally, and more importantly, they proved ineffective in the presence of steep slopes, a typical feature of GISM areas. Since the majority of Antarctic and Greenland ice sheet mass loss is estimated to lie within 100 km from the coast, but only about 10% is surveyed, there is the need for more robust and dense observations of GISMs, in both time and space. The ESA Altimetry mission CryoSat aims at gaining better insight into the evolution of the Cryosphere. CryoSat's revolutionary design features a Synthetic Interferometric Radar Altimeter (SIRAL), with two antennas for interferometry. The corresponding SAR Interferometer (SARIn) mode of operation increases spatial resolution while resolving the angular origin of off-nadir echoes occurring over sloping terrain. The SARIn mode is activated over GISMs and the elevation for the Point Of Closest Approach (POCA) is a standard product of the CryoSat mission. Here we present an approach for more comprehensively exploiting the SARIn mode of CryoSat and produce an ice elevation product with enhanced spatial resolution compared to standard CryoSat-2 height products. In this so called L2-swath processing approach, the full CryoSat waveform is exploited under specific conditions of signal and surface characteristics. We will present the rationale, validation exercises and preliminary results from the Eurpean Space Agency's STSE CryoTop study over selected test regions of the margins of the Greenland

Rotational Spectrum of Sarin.

PubMed

Walker, A. R. Hight; Suenram, R. D.; Samuels, Alan; Jensen, James; Ellzy, Michael W.; Lochner, J. Michael; Zeroka, Daniel

2001-05-01

As part of an effort to examine the possibility of using molecular-beam Fourier-transform microwave spectroscopy to unambiguously detect and monitor chemical warfare agents, we report the first observation and assignment of the rotational spectrum of the nerve agent Sarin (GB) (Methylphosphonofluoridic acid 1-methyl-ethyl ester, CAS #107-44-8) at frequencies between 10 and 22 GHz. Only one of the two low-energy conformers of this organophosphorus compound (C(4)H(10)FO(2)P) was observed in the rotationally cold (T(rot)<2 K) molecular beam. The experimental asymmetric-rotor ground-state rotational constants of this conformer are A=2874.0710(9) MHz, B=1168.5776(4) MHz, C=1056.3363(4) MHz (Type A standard uncertainties are given, i.e., 1sigma), as obtained from a least-squares analysis of 74 a-, b-, and c-type rotational transitions. Several of the transitions are split into doublets due to the internal rotation of the methyl group attached to the phosphorus. The three-fold-symmetry barrier to internal rotation estimated from these splittings is 677.0(4) cm(-1). Ab initio electronic structure calculations using Hartree-Fock, density functional, and Moller-Plesset perturbation theories have also been made. The structure of the lowest-energy conformer determined from a structural optimization at the MP2/6-311G(**) level of theory is consistent with our experimental findings. Copyright 2001 Academic Press.

Synthesis and in vitro reactivation study of isonicotinamide derivatives of 2-(hydroxyimino)-N-(pyridin-3-yl)acetamide as reactivators of Sarin and VX inhibited human acetylcholinesterase (hAChE).

PubMed

Karade, Hitendra N; Raviraju, G; Acharya, B N; Valiveti, Aditya Kapil; Bhalerao, Uma; Acharya, Jyotiranjan

2016-09-15

Previously (Karade et al., 2014), we have reported the synthesis and in vitro evaluation of bis-pyridinium derivatives of pyridine-3-yl-(2-hydroxyimino acetamide), as reactivators of sarin and VX inhibited hAChE. Few of the molecules showed superior in vivo protection efficacy (mice model) (Kumar et al., 2014; Swami et al., 2016) in comparison to 2-PAM against DFP and sarin poisoning. Encouraged by these results, herein we report the synthesis and in vitro evaluation of isonicotinamide derivatives of pyridine-3-yl-(2-hydroxyimino acetamide) (4a-4d) against sarin and VX inhibited erythrocyte ghost hAChE. Reactivation kinetics of these compounds was studied and the determined kinetic parameters were compared with that of commercial reactivators viz. 2-PAM and obidoxime. In comparison to 2-PAM and obidoxime, oxime 4a and 4b exhibited enhanced reactivation efficacy toward sarin inhibited hAChE while oxime 4c showed far greater reactivation efficacy toward VX inhibited hAChE. The acid dissociation constant and IC50 values of these oximes were determined and correlated with the observed reactivation potential. Copyright © 2016 Elsevier Ltd. All rights reserved.

Ice elevation change from Swath Processing of CryoSat SARIn Mode Data

NASA Astrophysics Data System (ADS)

Foresta, Luca; Gourmelen, Noel; Shepherd, Andrew; Muir, Alan; Nienow, Pete

2015-04-01

Reference and repeat-observations of Glacier and Ice Sheet Margin (GISM) topography are critical to identify changes in ice elevation, provide estimates of mass gain or loss and thus quantify the contribution of the cryosphere to sea level rise (e.g. McMillan et al., 2014). The Synthetic Interferometric Radar Altimeter (SIRAL) onboard the ESA radar altimetry CryoSat (CS) mission has collected ice elevation measurements since 2010. The corresponding SARIn mode of operation, activated over GISM areas, provides high spatial resolution in the along-track direction while resolving the angular origin of echoes (i.e. across-track). The current ESA SARIn processor calculates the elevation of the Point Of Closest Approach (POCA) within each waveform and maps of elevation change in Antarctica and Greenland have been produced using the regular CS height product (McMillan et al., 2014; Helm et al., 2014). Data from the CS-SARIn mode has also been used to produce measurements of ice elevation beyond the POCA, also known as swath elevation (Hawley et al. 2009; Gray et al., 2013; ESA-STSE CryoTop project). Here we use the swath processing approach to generate maps of ice elevation change from selected regions around the margins of the Greenland and Antarctic Ice Sheets. We discuss the impact of the swath processing on the spatial resolution and precision of the resulting ice elevation field and compare our results to current dh/dt estimates. References: ESA STSE CryoTop project - http://www.stse-cryotop.org/ Gray L., Burgess D., Copland L., Cullen R., Galin N., Hawley R. and Helm V. Interferometric swath processing of Cryosat data for glacial ice topography. The Cryosphere, 7(6):1857-1867, December 2013. Hawley R.L., Shepherd A., Cullen R., Helm V. and WIngham D.J. Ice-sheet elevations from across-track processing of airborne interferometric radar altimetry. Geophysical Research Letters, 36(22):L22501, November 2009. Helm V., Humbert A. and Miller H. Elevation and elevation

Engineering Bacteria to Catabolize the Carbonaceous Component of Sarin: Teaching E. coli to Eat Isopropanol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brown, Margaret E.; Mukhopadhyay, Aindrila; Keasling, Jay D.

In this paper, we report an engineered strain of Escherichia coli that catabolizes the carbonaceous component of the extremely toxic chemical warfare agent sarin. Enzymatic decomposition of sarin generates isopropanol waste that, with this engineered strain, is then transformed into acetyl-CoA by enzymatic conversion with a key reaction performed by the acetone carboxylase complex (ACX). We engineered the heterologous expression of the ACX complex from Xanthobacter autotrophicus PY2 to match the naturally occurring subunit stoichiometry and purified the recombinant complex from E. coli for biochemical analysis. Incorporating this ACX complex and enzymes from diverse organisms, we introduced an isopropanol degradationmore » pathway in E. coli, optimized induction conditions, and decoupled enzyme expression to probe pathway bottlenecks. Our engineered E. coli consumed 65% of isopropanol compared to no-cell controls and was able to grow on isopropanol as a sole carbon source. Finally, in the process, reconstitution of this large ACX complex (370 kDa) in a system naïve to its structural and mechanistic requirements allowed us to study this otherwise cryptic enzyme in more detail than would have been possible in the less genetically tractable native Xanthobacter system.« less

Hormone-dependence of sarin lethality in rats: Sex differences and stage of the estrous cycle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Carl D., E-mail: carl.d.smith179.mil@mail.mil; Wright, Linnzi K.M.; Garcia, Gregory E.

Chemical warfare nerve agents (CWNAs) are highly toxic compounds that cause a cascade of symptoms and death, if exposed casualties are left untreated. Numerous rodent models have investigated the toxicity and mechanisms of toxicity of CWNAs, but most are limited to male subjects. Given the profound physiological effects of circulating gonadal hormones in female rodents, it is possible that the daily cyclical fluctuations of these hormones affect females' sensitivity to the lethal effects of CWNAs, and previous reports that included female subjects did not control for the stage of the hormonal cycle. The aim of the current study was tomore » determine the 24-hour median lethal dose (LD{sub 50}) of the CWNA sarin in male, ovariectomized (OVEX) female, and female rats during different stages of the estrous cycle (diestrus, proestrus, and estrus). Additionally, baseline activity levels of plasma acetylcholinesterase, butyrylcholinesterase, and carboxylesterase were measured to determine differences among the groups. Results indicated that females in proestrus had a significantly higher LD{sub 50} of sarin compared to OVEX and estrous females. Although some sex differences were observed in the activity levels of plasma esterases, they were not consistent and likely not large enough to significantly affect the LD{sub 50}s. These results suggest that hormonal cyclicity can influence the outcome of CWNA-related studies using female rodents, and that this variability can be minimized by controlling for the stage of the cycle. Additional research is necessary to determine the precise mechanism of the observed differences because it is unlikely to be solely explained by plasma esterase activity. - Highlights: • The LD{sub 50} of sarin was determined in female rats throughout the stages of the estrous cycle. • Females in proestrus had a significantly higher LD{sub 50} compared to estrous or ovariectomized females. • No sex differences were observed between male and

Emergency management of chemical weapons injuries.

PubMed

Anderson, Peter D

2012-02-01

The potential for chemical weapons to be used in terrorism is a real possibility. Classes of chemical weapons include nerve agents, vesicants (blister agents), choking agents, incapacitating agents, riot control agents, blood agents, and toxic industrial chemicals. The nerve agents work by blocking the actions of acetylcholinesterase leading to a cholinergic syndrome. Nerve agents include sarin, tabun, VX, cyclosarin, and soman. The vesicants include sulfur mustard and lewisite. The vesicants produce blisters and also damage the upper airways. Choking agents include phosgene and chlorine gas. Choking agents cause pulmonary edema. Incapacitating agents include fentanyl and its derivatives and adamsite. Riot control agents include Mace and pepper spray. Blood agents include cyanide. The mechanism of toxicity for cyanide is blocking oxidative phosphorylation. Toxic industrial chemicals include agents such as formaldehyde, hydrofluoric acid, and ammonia.

Reactivation of model cholinesterases by oximes and intermediate phosphyloximes: A computational study

PubMed Central

Vyas, Shubham; Hadad, Christopher M.

2008-01-01

Phosphyloximes (POX) are generated upon the reactivation of organophosphorus (OP) inhibited cholinesterases (ChEs) by pyridinium oximes. These POXs are known to be potent inhibitors of the ChEs following reactivation. However, they can also decompose to give an OP derivative and a cyano derivative of the oxime when a base abstracts the benzylic proton. Using density functional theory, thermodynamic properties were calculated for the reactivation and decomposition pathways of three different oximes (2-PAM, 3-PAM and 4-PAM) with six different OPs (cyclosarin, paraoxon, sarin, tabun, VR and VX). For reactivation purposes, 2-PAM is predicted to be more efficient than 3- and 4-PAM. Based on atomic charges and relative energies, 2-POXs were found to be more inclined towards the decomposition process. PMID:18582852

The role of the oximes HI-6 and HS-6 inside human acetylcholinesterase inhibited with nerve agents: a computational study.

PubMed

Cuya, Teobaldo; Gonçalves, Arlan da Silva; da Silva, Jorge Alberto Valle; Ramalho, Teodorico C; Kuca, Kamil; C C França, Tanos

2017-10-27

The oximes 4-carbamoyl-1-[({2-[(E)-(hydroxyimino) methyl] pyridinium-1-yl} methoxy) methyl] pyridinium (known as HI-6) and 3-carbamoyl-1-[({2-[(E)-(hydroxyimino) methyl] pyridinium-1-yl} methoxy) methyl] pyridinium (known as HS-6) are isomers differing from each other only by the position of the carbamoyl group on the pyridine ring. However, this slight difference was verified to be responsible for big differences in the percentual of reactivation of acetylcholinesterase (AChE) inhibited by the nerve agents tabun, sarin, cyclosarin, and VX. In order to try to find out the reason for this, a computational study involving molecular docking, molecular dynamics, and binding energies calculations, was performed on the binding modes of HI-6 and HS-6 on human AChE (HssAChE) inhibited by those nerve agents.

Neurosciences and research on chemical weapons of mass destruction in Nazi Germany.

PubMed

Schmaltz, Florian

2006-09-01

As a side-product of industrial research, new chemical nerve agents (Tabun, Sarin, Soman) superior to those available to the Allied Forces were discovered in Nazi Germany. These agents were never used by Germany, even though they were produced at a large scale. This article explores the toxicological and physiological research into the mechanisms of action of these novel nerve agents, and the emergence of military research objectives in neurophysiological and neurotoxicological research. Recently declassified Allied military intelligence files document secret nerve agent research, leading to intensified research on anticholinesterase agents in the peripheral and the central nervous system. The article discusses the involvement of IG Farben scientists, educational, medical and military institutions, and of Nobel Prize laureate Richard Kuhn, director of the Kaiser Wilhelm Institute for Medical Research.

Potent 3-Hydroxy-2-Pyridine Aldoxime Reactivators of Organophosphate-Inhibited Cholinesterases with Predicted Blood-Brain Barrier Penetration.

PubMed

Zorbaz, Tamara; Braïki, Anissa; Maraković, Nikola; Renou, Julien; de la Mora, Eugenio; Maček Hrvat, Nikolina; Katalinić, Maja; Silman, Israel; Sussman, Joel L; Mercey, Guillaume; Gomez, Catherine; Mougeot, Romain; Pérez, Belén; Baati, Rachid; Nachon, Florian; Weik, Martin; Jean, Ludovic; Kovarik, Zrinka; Renard, Pierre-Yves

2018-04-19

A new series of 3-hydroxy-2-pyridine aldoxime compounds have been designed, synthesised and tested in vitro, in silico, and ex vivo as reactivators of human acetylcholinesterase (hAChE) and butyrylcholinesterase (hBChE) inhibited by organophosphates (OPs), for example, VX, sarin, cyclosarin, tabun, and paraoxon. The reactivation rates of three oximes (16-18) were determined to be greater than that of 2-PAM and comparable to that of HI-6, two pyridinium aldoximes currently used by the armies of several countries. The interactions important for a productive orientation of the oxime group within the OP-inhibited enzyme have been clarified by molecular-modelling studies, and by the resolution of the crystal structure of the complex of oxime 17 with Torpedo californica AChE. Blood-brain barrier penetration was predicted for oximes 15-18 based on their physicochemical properties and an in vitro brain membrane permeation assay. Among the evaluated compounds, two morpholine-3-hydroxypyridine aldoxime conjugates proved to be promising reactivators of OP-inhibited cholinesterases. Moreover, efficient ex vivo reactivation of phosphylated native cholinesterases by selected oximes enabled significant hydrolysis of VX, sarin, paraoxon, and cyclosarin in whole human blood, which indicates that the oximes have scavenging potential. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Crystal Structures of Human Carboxylesterase 1 in Covalent Complexes with the Chemical Warfare Agents Soman and Tabun†,‡

PubMed Central

Fleming, Christopher D.; Edwards, Carol C.; Kirby, Stephen D.; Maxwell, Donald M.; Potter, Philip M.; Cerasoli, Douglas M.; Redinbo, Matthew R.

2008-01-01

The organophosphorus nerve agents sarin, soman, tabun, and VX exert their toxic effects by inhibiting the action of human acetylcholinesterase, a member of the serine hydrolase superfamily of enzymes. The current treatments for nerve agent exposure must be administered quickly to be effective and they often do not eliminate long-term toxic side effects associated with organophosphate poisoning. Thus, there is significant need for effective prophylactic methods to protect at-risk personnel from nerve agent exposure, and protein-based approaches have emerged as promising candidates. We present the 2.7 Å resolution crystal structures of the serine hydrolase human carboxylesterase 1 (hCE1), a broad-spectrum drug metabolism enzyme, in covalent acyl-enzyme intermediate complexes with the chemical weapons soman and tabun. The structures reveal that hCE1 binds stereoselectively to these nerve agents; for example, hCE1 appears to react preferentially with the 104-fold more lethal PS stereoisomer of soman relative to the PR form. In addition, structural features of the hCE1 active site indicate that the enzyme may be resistant to dead-end organophosphate aging reactions that permanently inactivate other serine hydrolases. Taken together, these data provide important structural details toward the goal of engineering hCE1 into an organophosphate hydrolase and protein-based therapeutic for nerve agent exposure. PMID:17407327

Younger rats are more susceptible to the lethal effects of sarin than adult rats: 24 h LC50 for whole-body (10 and 60 min) exposures.

PubMed

Wright, Linnzi K M; Lumley, Lucille A; Lee, Robyn B; Taylor, James T; Miller, Dennis B; Muse, William T; Emm, Edward J; Whalley, Christopher E

2017-04-01

Chemical warfare nerve agents (CWNA) inhibit acetylcholinesterase and are among the most lethal chemicals known to man. Children are predicted to be vulnerable to CWNA exposure because of their smaller body masses, higher ventilation rates and immature central nervous systems. While a handful of studies on the effects of CWNA in younger animals have been published, exposure routes relevant to battlefield or terrorist situations (i.e. inhalation for sarin) were not used. Thus, we estimated the 24 h LC 50 for whole-body (10 and 60 min) exposure to sarin using a stagewise, adaptive dose design. Specifically, male and female Sprague-Dawley rats were exposed to a range of sarin concentrations (6.2-44.0 or 1.6-12.5 mg/m³) for either 10 or 60 min, respectively, at six different times during their development (postnatal day [PND] 7, 14, 21, 28, 42 and 70). For male and female rats, the lowest LC 50 values were observed for PND 14 and the highest LC 50 values for PND 28. Sex differences were observed only for PND 42 for the 10 min exposures and PND 21 and 70 for the 60 min exposures. Thus, younger rats (PND 14) were more susceptible than older rats (PND 70) to the lethal effects of whole-body exposure to sarin, while adolescent (PND 28) rats were the least susceptible and sex differences were minimal. These results underscore the importance of controlling for the age of the animal in research on the toxic effects associated with CWNA exposure.

Molecular and dissociative adsorption of DMMP, Sarin and Soman on dry and wet TiO2(110) using density functional theory

NASA Astrophysics Data System (ADS)

Quintero, Yenny Cardona; Nagarajan, Ramanathan

2018-09-01

Titania, among the metal oxides, has shown promising characteristics for the adsorption and decontamination of chemical warfare nerve agents, due to its high stability and rapid decomposition rates. In this study, the adsorption energy and geometry of the nerve agents Sarin and Soman, and their simulant dimethyl methyl phosphonate (DMMP) on TiO2 rutile (110) surface were calculated using density functional theory. The molecular and dissociative adsorption of the agents and simulant on dry as well as wet metal oxide surfaces were considered. For the wet system, computations were done for the cases of both molecularly adsorbed water (hydrated conformation) and dissociatively adsorbed water (hydroxylated conformation). DFT calculations show that dissociative adsorption of the agents and simulant is preferred over molecular adsorption for both dry and wet TiO2. The dissociative adsorption on hydrated TiO2 shows higher stability among the different configurations considered. The dissociative structure of DMMP on hydrated TiO2 (the most stable one) was identified as the dissociation of a methyl group and its adsorption on the TiO2 surface. For the nerve agents Sarin and Soman on hydrated TiO2 the dissociative structure was by the dissociation of the F atom from the molecule and its interaction with a Ti atom from the surface, which could indicate a reduction in the toxicity of the products. This study shows the relevance of water adsorption on the metal oxide surface for the stability and dissociation of the simulant DMMP and the nerve agents Sarin and Soman on TiO2.

Acute effects of a sarin-like organophosphorus agent, bis(isopropyl methyl)phosphonate, on cardiovascular parameters in anaesthetized, artificially ventilated rats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Yoshimasa; Itoh, Takeo, E-mail: titoh@med.nagoya-cu.ac.jp; Shiraishi, Hiroaki

The organophosphorus compound sarin irreversibly inhibits acetylcholinesterase. We examined the acute cardiovascular effects of a sarin-like organophosphorus agent, bis(isopropyl methyl)phosphonate (BIMP), in anaesthetized, artificially ventilated rats. Intravenous administration of BIMP (0.8 mg/kg; the LD50 value) induced a long-lasting increase in blood pressure and tended to increase heart rate. In rats pretreated with the non-selective muscarinic-receptor antagonist atropine, BIMP significantly increased both heart rate and blood pressure. In atropine-treated rats, hexamethonium (antagonist of ganglionic nicotinic receptors) greatly attenuated the BIMP-induced increase in blood pressure without changing the BIMP-induced increase in heart rate. In rats treated with atropine plus hexamethonium, intravenous phentolaminemore » (non-selective α-adrenergic receptor antagonist) plus propranolol (non-selective β-adrenergic receptor antagonist) completely blocked the BIMP-induced increases in blood pressure and heart rate. In atropine-treated rats, the reversible acetylcholinesterase inhibitor neostigmine (1 mg/kg) induced a transient increase in blood pressure, but had no effect on heart rate. These results suggest that in anaesthetized rats, BIMP induces powerful stimulation of sympathetic as well as parasympathetic nerves and thereby modulates heart rate and blood pressure. They may also indicate that an action independent of acetylcholinesterase inhibition contributes to the acute cardiovascular responses induced by BIMP. - Highlights: • A sarin-like agent BIMP markedly increased blood pressure in anaesthetized rats. • Muscarinic receptor blockade enhanced the BIMP-induced increase in blood pressure. • Ganglionic nicotinic receptor blockade attenuated the BIMP-induced response. • Blockade of α- as well as β-receptors attenuated the BIMP-induced response.« less

Synthesis and in-vitro reactivation screening of imidazolium aldoximes as reactivators of sarin and VX-inhibited human acetylcholinesterase (hAChE).

PubMed

Sharma, Rahul; Gupta, Bhanushree; Sahu, Arvind Kumar; Acharya, Jyotiranjan; Satnami, Manmohan L; Ghosh, Kallol K

2016-11-25

Post-treatment of organophosphate (OP) poisoning involves the application of oxime reactivator as an antidote. Structurally different oximes are widely studied to examine their kinetic and mechanistic behavior against OP-inhibited cholinesterase enzyme. A series of structurally related 1,3-disubstituted-2-[(hydroxyiminomethyl)alkyl]imidazolium halides (5a-5e, 9a-9c) were synthesized and further evaluated for their in-vitro reactivation ability to reactivate sarin- and VX-inhibited human acetylcholinesterase (hAChE). The observed results were compared with the reactivation efficacy of standard reactivators; 2-PAM, obidoxime and HI-6. Amongst the synthesized oximes, 5a, 9a and 9b were found to be most potent reactivators against sarin-inhibited hAChE while in case of VX only 9a exhibited comparable reactivity with 2-PAM. Incorporation of pyridinium ring to the imidazole ring resulted in substantial increase in the reactivation strength of prepared reactivator. Physicochemical properties of synthesized reactivators have also been evaluated. Copyright © 2016. Published by Elsevier Ireland Ltd.

Quantum-Chemical Study of the Adsorption of DMMP and Sarin on gamma-Al2O3

DTIC Science & Technology

2007-02-01

In this and in the following section, ∆Eads is not corrected for zero-point vibrational energy ( ZPE ); however, a counterpoise correction for basis set...Ångstroms and the bond angle is in degrees. Values in parentheses are BSSE-corrected (∆Eads C ) results. ∆Eads has not been corrected for ZPE . b 6-31G...sets. The ∆ Eads C values are given in parentheses. No ZPE corrections have been applied. e The basis sets used were 6-311G(df) for Sarin and for the Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Worek, Franz, E-mail: franzworek@bundeswehr.org; Wille, Timo; Aurbek, Nadine

Treatment of poisoning by highly toxic organophosphorus compounds (OP, nerve agents) is a continuous challenge. Standard treatment with atropine and a clinically used oxime, obidoxime or pralidoxime is inadequate against various nerve agents. For ethical reasons testing of oxime efficacy has to be performed in animals. Now, it was tempting to investigate the reactivation kinetics of MMB-4, a candidate oxime to replace pralidoxime, with nerve agent-inhibited acetylcholinesterase (AChE) from human and animal origin in order to provide a kinetic basis for the proper assessment of in vivo data. By applying a modified kinetic approach, allowing the use of necessary highmore » MMB-4 concentrations, it was possible to determine the reactivation constants with sarin-, cyclosarin-, VX-, VR- and tabun-inhibited AChE. MMB-4 exhibited a high reactivity and low affinity towards OP-inhibited AChE, except of tabun-inhibited enzyme where MMB-4 had an extremely low reactivity. Species differences between human and animal AChE were low (Cynomolgus) to moderate (swine, guinea pig). Due to the high reactivity of MMB-4 a rapid reactivation of inhibited AChE can be anticipated at adequate oxime concentrations which are substantially higher compared to HI-6. Additional studies are necessary to determine the in vivo toxicity, tolerability and pharmacokinetics of MMB-4 in humans in order to enable a proper assessment of the value of this oxime as an antidote against nerve agent poisoning.« less

Reactivation of organophosphate-inhibited human, Cynomolgus monkey, swine and guinea pig acetylcholinesterase by MMB-4: a modified kinetic approach.

PubMed

Worek, Franz; Wille, Timo; Aurbek, Nadine; Eyer, Peter; Thiermann, Horst

2010-12-15

Treatment of poisoning by highly toxic organophosphorus compounds (OP, nerve agents) is a continuous challenge. Standard treatment with atropine and a clinically used oxime, obidoxime or pralidoxime is inadequate against various nerve agents. For ethical reasons testing of oxime efficacy has to be performed in animals. Now, it was tempting to investigate the reactivation kinetics of MMB-4, a candidate oxime to replace pralidoxime, with nerve agent-inhibited acetylcholinesterase (AChE) from human and animal origin in order to provide a kinetic basis for the proper assessment of in vivo data. By applying a modified kinetic approach, allowing the use of necessary high MMB-4 concentrations, it was possible to determine the reactivation constants with sarin-, cyclosarin-, VX-, VR- and tabun-inhibited AChE. MMB-4 exhibited a high reactivity and low affinity towards OP-inhibited AChE, except of tabun-inhibited enzyme where MMB-4 had an extremely low reactivity. Species differences between human and animal AChE were low (Cynomolgus) to moderate (swine, guinea pig). Due to the high reactivity of MMB-4 a rapid reactivation of inhibited AChE can be anticipated at adequate oxime concentrations which are substantially higher compared to HI-6. Additional studies are necessary to determine the in vivo toxicity, tolerability and pharmacokinetics of MMB-4 in humans in order to enable a proper assessment of the value of this oxime as an antidote against nerve agent poisoning. Copyright © 2010 Elsevier Inc. All rights reserved.

Improved repetition rate mixed isotope CO2 TEA laser

NASA Astrophysics Data System (ADS)

Cohn, D. B.

2014-09-01

A compact CO2 TEA laser has been developed for remote chemical detection that operates at a repetition rate of 250 Hz. It emits 700 mJ/pulse at 10.6 μm in a multimode beam with the 12C16O2 isotope. With mixed 12C16O2 plus 13C16O2 isotopes it emits multiple lines in both isotope manifolds to improve detection of a broad range of chemicals. In particular, output pulse energies are 110 mJ/pulse at 9.77 μm, 250 mJ/pulse at 10 μm, and 550 mJ/pulse at 11.15 μm, useful for detection of the chemical agents Sarin, Tabun, and VX. Related work shows capability for long term sealed operation with a catalyst and an agile tuner at a wavelength shift rate of 200 Hz.

Carboxylesterases: General detoxifying enzymes

PubMed Central

Hatfield, M. Jason; Umans, Robyn A.; Hyatt, Janice L.; Edwards, Carol C; Wierdl, Monika; Tsurkan, Lyudmila; Taylor, Michael R.; Potter, Philip M.

2016-01-01

Carboxylesterases (CE) are members of the esterase family of enzymes, and as their name suggests, they are responsible for the hydrolysis of carboxylesters into the corresponding alcohol and carboxylic acid. To date, no endogenous CE substrates have been identified and as such, these proteins are thought to act as a mechanism to detoxify ester-containing xenobiotics. As a consequence, they are expressed in tissues that might be exposed to such agents (lung and gut epithelia, liver, kidney, etc.). CEs demonstrate very broad substrate specificities and can hydrolyze compounds as diverse as cocaine, oseltamivir (Tamiflu), permethrin and irinotecan. In addition, these enzymes are irreversibly inhibited by organophosphates such as Sarin and Tabun. In this overview, we will compare and contrast the two human enzymes that have been characterized, and evaluate the biology of the interaction of these proteins with organophosphates (principally nerve agents). PMID:26892220

Repeated low-dose exposures to sarin, soman, or VX affect acoustic startle in guinea pigs.

PubMed

Smith, C D; Lee, R B; Moran, A V; Sipos, M L

2016-01-01

Chemical warfare nerve agents (CWNAs) are known to cause behavioral abnormalities in cases of human exposures and in animal models. The behavioral consequences of single exposures to CWNAs that cause observable toxic signs are particularly well characterized in animals; however, less is known regarding repeated smaller exposures that may or may not cause observable toxic signs. In the current study, guinea pigs were exposed to fractions (0.1, 0.2, or 0.4) of a medial lethal dose (LD50) of sarin, soman, or VX for two weeks. On each exposure day, and for a post-exposure period, acoustic startle response (ASR) was measured in each animal. Although relatively few studies use guinea pigs to measure behavior, this species is ideal for CWNA-related experiments because their levels of carboxylesterases closely mimic those of humans, unlike rats or mice. Results showed that the 0.4 LD50 doses of soman and VX transiently increased peak startle amplitude by the second week of injections, with amplitude returning to baseline by the second week post-exposure. Sarin also increased peak startle amplitude independent of week. Latencies to peak startle and PPI were affected by agent exposure but not consistently among the three agents. Most of the changes in startle responses returned to baseline following the cessation of exposures. These data suggest that doses of CWNAs not known to produce observable toxic signs in guinea pigs can affect behavior in the ASR paradigm. Further, these deficits are transient and usually return to baseline shortly after the end of a two-week exposure period. Published by Elsevier Inc.

Raman imaging using fixed bandpass filter

NASA Astrophysics Data System (ADS)

Landström, L.; Kullander, F.; Lundén, H.; Wästerby, P.

2017-05-01

By using fixed narrow band pass optical filtering and scanning the laser excitation wavelength, hyperspectral Raman imaging could be achieved. Experimental, proof-of-principle results from the Chemical Warfare Agent (CWA) tabun (GA) as well as the common CWA simulant tributyl phosphate (TBP) on different surfaces/substrates are presented and discussed.

Ion mobility spectrometric analysis of vaporous chemical warfare agents by the instrument with corona discharge ionization ammonia dopant ambient temperature operation.

PubMed

Satoh, Takafumi; Kishi, Shintaro; Nagashima, Hisayuki; Tachikawa, Masumi; Kanamori-Kataoka, Mieko; Nakagawa, Takao; Kitagawa, Nobuyoshi; Tokita, Kenichi; Yamamoto, Soichiro; Seto, Yasuo

2015-03-20

The ion mobility behavior of nineteen chemical warfare agents (7 nerve gases, 5 blister agents, 2 lachrymators, 2 blood agents, 3 choking agents) and related compounds including simulants (8 agents) and organic solvents (39) was comparably investigated by the ion mobility spectrometry instrument utilizing weak electric field linear drift tube with corona discharge ionization, ammonia doping, purified inner air drift flow circulation operated at ambient temperature and pressure. Three alkyl methylphosphonofluoridates, tabun, and four organophosphorus simulants gave the intense characteristic positive monomer-derived ion peaks and small dimer-derived ion peaks, and the later ion peaks were increased with the vapor concentrations. VX, RVX and tabun gave both characteristic positive monomer-derived ions and degradation product ions. Nitrogen mustards gave the intense characteristic positive ion peaks, and in addition distinctive negative ion peak appeared from HN3. Mustard gas, lewisite 1, o-chlorobenzylidenemalononitrile and 2-mercaptoethanol gave the characteristic negative ion peaks. Methylphosphonyl difluoride, 2-chloroacetophenone and 1,4-thioxane gave the characteristic ion peaks both in the positive and negative ion mode. 2-Chloroethylethylsulfide and allylisothiocyanate gave weak ion peaks. The marker ion peaks derived from two blood agents and three choking agents were very close to the reactant ion peak in negative ion mode and the respective reduced ion mobility was fluctuated. The reduced ion mobility of the CWA monomer-derived peaks were positively correlated with molecular masses among structurally similar agents such as G-type nerve gases and organophosphorus simulants; V-type nerve gases and nitrogen mustards. The slope values of the calibration plots of the peak heights of the characteristic marker ions versus the vapor concentrations are related to the detection sensitivity, and within chemical warfare agents examined the slope values for sarin, soman

Comparison of the lethal effects of chemical warfare nerve agents across multiple ages.

PubMed

Wright, Linnzi K M; Lee, Robyn B; Vincelli, Nicole M; Whalley, Christopher E; Lumley, Lucille A

2016-01-22

Children may be inherently more vulnerable than adults to the lethal effects associated with chemical warfare nerve agent (CWNA) exposure because of their closer proximity to the ground, smaller body mass, higher respiratory rate, increased skin permeability and immature metabolic systems. Unfortunately, there have only been a handful of studies on the effects of CWNA in pediatric animal models, and more research is needed to confirm this hypothesis. Using a stagewise, adaptive dose design, we estimated the 24h median lethal dose for subcutaneous exposure to seven CWNA in both male and female Sprague-Dawley rats at six different developmental times. Perinatal (postnatal day [PND] 7, 14 and 21) and adult (PND 70) rats were more susceptible than pubertal (PND 28 and 42) rats to the lethal effects associated with exposure to tabun, sarin, soman and cyclosarin. Age-related differences in susceptibility were not observed in rats exposed to VM, Russian VX or VX. Published by Elsevier Ireland Ltd.

Improved repetition rate mixed isotope CO{sub 2} TEA laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cohn, D. B., E-mail: dbctechnology@earthlink.net

2014-09-15

A compact CO{sub 2} TEA laser has been developed for remote chemical detection that operates at a repetition rate of 250 Hz. It emits 700 mJ/pulse at 10.6 μm in a multimode beam with the {sup 12}C{sup 16}O{sub 2} isotope. With mixed {sup 12}C{sup 16}O{sub 2} plus {sup 13}C{sup 16}O{sub 2} isotopes it emits multiple lines in both isotope manifolds to improve detection of a broad range of chemicals. In particular, output pulse energies are 110 mJ/pulse at 9.77 μm, 250 mJ/pulse at 10 μm, and 550 mJ/pulse at 11.15 μm, useful for detection of the chemical agents Sarin, Tabun, and VX. Relatedmore » work shows capability for long term sealed operation with a catalyst and an agile tuner at a wavelength shift rate of 200 Hz.« less

Reactivation of organophosphate-inhibited human acetylcholinesterase by isonitrosoacetone (MINA): a kinetic analysis.

PubMed

Worek, Franz; Thiermann, Horst

2011-11-15

Treatment of poisoning by highly toxic organophosphorus compounds (OP) with atropine and an acetylcholinesterase (AChE) reactivator (oxime) is of limited effectiveness in case of different nerve agents and pesticides. One challenge is the reactivation of OP-inhibited brain AChE which shows inadequate success with charged pyridinium oximes. Recent studies with high doses of the tertiary oxime isonitrosoacetone (MINA) indicated a beneficial effect on central and peripheral AChE and on survival in nerve agent poisoned guinea pigs. Now, an in vitro study was performed to determine the reactivation kinetics of MINA with tabun-, sarin-, cyclosarin-, VX- and paraoxon-inhibited human AChE. MINA showed an exceptionally low affinity to inhibited AChE but, with the exception of tabun-inhibited AChE, a moderate to high reactivity. In comparison to the pyridinium oximes obidoxime, 2-PAM and HI-6 the affinity and reactivity of MINA was in most cases lower and in relation to the most effective reactivators, the second order reactivation constant of MINA was 500 to 3400-fold lower. Hence, high in vivo MINA concentrations would be necessary to achieve at least partial reactivation. This assumption corresponds to in vivo data showing a dose-dependent effect on reactivation and survival in animals. In view, of the toxic potential of MINA in animals human studies would be necessary to determine the tolerability and pharmacokinetics of MINA in order to enable a proper assessment of the value of this oxime as an antidote in OP poisoning. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

Fate of chemical warfare agents and toxic industrial chemicals in landfills.

PubMed

Bartelt-Hunt, Shannon L; Barlaz, Morton A; Knappe, Detlef R U; Kjeldsen, Peter

2006-07-01

One component of preparedness for a chemical attack is planning for the disposal of contaminated debris. To assess the feasibility of contaminated debris disposal in municipal solid waste (MSW) landfills, the fate of selected chemical warfare agents (CWAs) and toxic industrial chemicals (TICs) in MSW landfills was predicted with a mathematical model. Five blister agents [sulfur mustard (HD), nitrogen mustard (HN-2), lewisite (L), ethyldichloroarsine (ED), and phosgene oxime (CX)], eight nerve agents [tabun (GA), sarin (GB), soman (GD), GE, GF, VX, VG, and VM], one riot-control agent [CS], and two TICs [furan and carbon disulfide] were studied. The effects of both infiltration (climate) and contaminant biodegradability on fate predictions were assessed. Model results showed that hydrolysis and gas-phase advection were the principal fate pathways for CWAs and TICs, respectively. Apart from CX and the TICs, none of the investigated compounds was predicted to persist in a landfill for more than 5 years. Climate had little impact on CWA/TIC fate, and biodegradability was only important for compounds with long hydrolysis half-lives. Monte Carlo simulations were performed to assess the influence of uncertainty in model input parameters on CWA/TIC fate predictions. Correlation analyses showed that uncertainty in hydrolysis rate constants was the primary contributor to variance of CWA fate predictions, while uncertainty in the Henry's Law constant and landfill gas-production rate accounted for most of the variance of TIC fate predictions. CWA hydrolysates were more persistent than the parent CWAs, but limited information is available on abiotic or biotic transformation rates for these chemicals.

In Vivo Microdialysis and Electroencephalographic Activity in Freely Moving Guinea Pigs Exposed to Organophosphorus Nerve Agents Sarin and VX: Analysis of Acetylcholine and Glutamate

DTIC Science & Technology

2011-01-01

3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE In vivo microdialysis and electroencephalographic activity in freely moving guinea pigs 5a...microdialysis and electroencephalographic activity in freely moving guinea pigs exposed to organophosphorus nerve agents sarin and VX: analysis of...brain seizure activity . This robust double multi- variate design provides greater fidelity when comparing data while also reducing the required number

Dual Role of Water in Heterogeneous Catalytic Hydrolysis of Sarin by Zirconium-Based Metal-Organic Frameworks.

PubMed

Momeni, Mohammad R; Cramer, Christopher J

2018-05-22

Recent experimental studies on Zr IV -based metal-organic frameworks (MOFs) have shown the extraordinary effectiveness of these porous materials for the detoxification of phosphorus-based chemical warfare agents (CWAs). However, pressing challenges remain with respect to characterizing these catalytic processes both at the molecular and crystalline levels. We here use theory to compare the reactivity of different zirconium-based MOFs for the catalytic hydrolysis of the CWA sarin, using both periodic and cluster modeling. We consider both hydrated and dehydrated secondary building units, as well as linker functionalized MOFs, to more fully understand and rationalize available experimental findings as well as to enable concrete predictions for achieving higher activities for the decomposition of CWAs.

An in vitro and in vivo evaluation of the efficacy of recombinant human liver prolidase as a catalytic bioscavenger of chemical warfare nerve agents.

PubMed

Rezk, Peter E; Zdenka, Pierre; Sabnekar, Praveena; Kajih, Takwen; Mata, David G; Wrobel, Chester; Cerasoli, Douglas M; Chilukuri, Nageswararao

2015-01-01

In this study, we determined the ability of recombinant human liver prolidase to hydrolyze nerve agents in vitro and its ability to afford protection in vivo in mice. Using adenovirus containing the human liver prolidase gene, the enzyme was over expressed by 200- to 300-fold in mouse liver and purified to homogeneity by affinity and gel filtration chromatography. The purified enzyme hydrolyzed sarin, cyclosarin and soman with varying rates of hydrolysis. The most efficient hydrolysis was with sarin, followed by soman and by cyclosarin {apparent kcat/Km [(1.9 ± 0.3), (1.7 ± 0.2), and (0.45 ± 0.04)] × 10(5 )M(-1 )min(-1), respectively}; VX and tabun were not hydrolyzed by the recombinant enzyme. The enzyme hydrolyzed P (+) isomers faster than the P (-) isomers. The ability of recombinant human liver prolidase to afford 24 hour survival against a cumulative dose of 2 × LD50 of each nerve agent was investigated in mice. Compared to mice injected with a control virus, mice injected with the prolidase expressing virus contained (29 ± 7)-fold higher levels of the enzyme in their blood on day 5. Challenging these mice with two consecutive 1 × LD50 doses of sarin, cyclosarin, and soman resulted in the death of all animals within 5 to 8 min from nerve agent toxicity. In contrast, mice injected with the adenovirus expressing mouse butyrylcholinesterase, an enzyme which is known to afford protection in vivo, survived multiple 1 × LD50 challenges of these nerve agents and displayed no signs of toxicity. These results suggest that, while prolidase can hydrolyze certain G-type nerve agents in vitro, the enzyme does not offer 24 hour protection against a cumulative dose of 2 × LD50 of G-agents in mice in vivo.

Efficacy of novel phenoxyalkyl pyridinium oximes as brain-penetrating reactivators of cholinesterase inhibited by surrogates of sarin and VX.

PubMed

Chambers, Janice E; Chambers, Howard W; Funck, Kristen E; Meek, Edward C; Pringle, Ronald B; Ross, Matthew K

2016-11-25

Pyridinium oximes are strong nucleophiles and many are effective reactivators of organophosphate-inhibited cholinesterase (ChE). However, the current oxime reactivators are ineffective at crossing the blood-brain barrier and reactivating brain ChE in the intact organism. Our laboratories have developed a series of substituted phenoxyalkyl pyridinium oximes (US patent 9,227,937 B2) with the goal of identifying reactivators effective in crossing the blood-brain barrier. The first 35 of the series were found to have similar in vitro efficacy as reactivators of ChE inhibited by a sarin surrogate (phthalimidyl isopropyl methylphosphonate, PIMP) or a VX surrogate (nitrophenyl ethyl methylphosphonate, NEMP) in bovine brain preparations as previously observed in rat brain preparations. A number of these novel oximes have shown the ability to decrease the level of ChE inhibition in the brains of rats treated with a high sublethal dosage of either a sarin surrogate (nitrophenyl isopropyl methylphosphonate, NIMP) or the VX surrogate NEMP. Levels of reactivation at 2 h after oxime administration were up to 35% while the currently approved therapeutic, 2-PAM, yielded no reduction in brain ChE inhibition. In addition, there was evidence of attenuation of seizure-like behavior with several of the more effective novel oximes, but not 2-PAM. Therefore these novel oximes have demonstrated an ability to reactivate inhibited ChE in brain preparations from two species and in vivo data support their ability to enter the brain and provide a therapeutic action. These novel oximes have the potential to be developed into improved antidotes for nerve agent therapy. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Identification of chemical warfare agents from vapor samples using a field-portable capillary gas chromatography/membrane-interfaced electron ionization quadrupole mass spectrometry instrument with Tri-Bed concentrator.

PubMed

Nagashima, Hisayuki; Kondo, Tomohide; Nagoya, Tomoki; Ikeda, Toru; Kurimata, Naoko; Unoke, Shohei; Seto, Yasuo

2015-08-07

A field-portable gas chromatograph-mass spectrometer (Hapsite ER system) was evaluated for the detection of chemical warfare agents (CWAs) in the vapor phase. The system consisted of Tri-Bed concentrator gas sampler (trapping time: 3s(-1)min), a nonpolar low thermal-mass capillary gas chromatography column capable of raising temperatures up to 200°C, a hydrophobic membrane-interfaced electron ionization quadrupole mass spectrometer evacuated by a non-evaporative getter pump for data acquisition, and a personal computer for data analysis. Sample vapors containing as little as 22μg sarin (GB), 100μg soman (GD), 210μg tabun (GA), 55μg cyclohexylsarin (GF), 4.8μg sulfur mustard, 390μg nitrogen mustard 1, 140μg of nitrogen mustard 2, 130μg nitrogen mustard 3, 120μg of 2-chloroacetophenone and 990μg of chloropicrin per cubic meter could be confirmed after Tri-Bed micro-concentration (for 1min) and automated AMDIS search within 12min. Using manual deconvolution by background subtraction of neighboring regions on the extracted ion chromatograms, the above-mentioned CWAs could be confirmed at lower concentration levels. The memory effects were also examined and we found that blister agents showed significantly more carry-over than nerve agents. Gasoline vapor was found to interfere with the detection of GB and GD, raising the concentration limits for confirmation in the presence of gasoline by both AMDIS search and manual deconvolution; however, GA and GF were not subject to interference by gasoline. Lewisite 1, and o-chlorobenzylidene malononitrile could also be confirmed by gas chromatography, but it was hard to quantify them. Vapors of phosgene, chlorine, and cyanogen chloride could be confirmed by direct mass spectrometric detection at concentration levels higher than 2, 140, and 10mg/m(3) respectively, by bypassing the micro-concentration trap and gas chromatographic separation. Copyright © 2015 Elsevier B.V. All rights reserved.

Cholinesterases, a target of pharmacology and toxicology.

PubMed

Pohanka, Miroslav

2011-09-01

Cholinesterases are a group of serine hydrolases that split the neurotransmitter acetylcholine (ACh) and terminate its action. Of the two types, butyrylcholinesterase and acetylcholinesterase (AChE), AChE plays the key role in ending cholinergic neurotransmission. Cholinesterase inhibitors are substances, either natural or man-made that interfere with the break-down of ACh and prolong its action. Hence their relevance to toxicology and pharmacology. The present review summarizes current knowledge of the cholinesterases and their inhibition. Particular attention is paid to the toxicology and pharmacology of cholinesterase-related inhibitors such as nerve agents (e.g. sarin, soman, tabun, VX), pesticides (e.g. paraoxon, parathion, malathion, malaoxon, carbofuran), selected plants and fungal secondary metabolites (e.g. aflatoxins), drugs for Alzheimer's disease (e.g. huperzine, metrifonate, tacrine, donepezil) and Myasthenia gravis (e.g. pyridostigmine) treatment and other compounds (propidium, ethidium, decamethonium). The crucial role of the cholinesterases in neural transmission makes them a primary target of a large number of cholinesterase-inhibiting drugs and toxins. In pharmacology, this has relevance to the treatment of neurodegenerative disorders.

A Comprehensive Evaluation of the Efficacy of Leading Oxime Therapies in Guinea Pigs Exposed to Organophosphorus Chemical Warfare Agents or Pesticides

PubMed Central

Wilhelm, Christina M.; Snider, Thomas H.; Babin, Michael C.; Jett, David A.; Platoff, Gennady E.; Yeung, David T.

2014-01-01

The currently fielded pre-hospital therapeutic regimen for the treatment of organophosphorus (OP) poisoning in the United States (U.S.) is the administration of atropine in combination with an oxime antidote (2-PAM Cl) to reactivate inhibited acetylcholinesterase (AChE). Depending on clinical symptoms, an anticonvulsant, e.g., diazepam, may also be administered. Unfortunately, 2-PAM Cl does not offer sufficient protection across the range of OP threat agents, and there is some question as to whether it is the most effective oxime compound available. The objective of the present study is to identify an oxime antidote, under standardized and comparable conditions, that offers protection at the FDA approved human equivalent dose (HED) of 2-PAM Cl against tabun (GA), sarin (GB), soman (GD), cyclosarin (GF), and VX, and the pesticides paraoxon, chlorpyrifos oxon, and phorate oxon. Male Hartley guinea pigs were subcutaneously challenged with a lethal level of OP and treated at approximately 1 min post challenge with atropine followed by equimolar oxime therapy (2-PAM Cl, HI-6 DMS, obidoxime Cl2, TMB-4, MMB4-DMS, HLö-7 DMS, MINA, and RS194B) or therapeutic-index (TI) level therapy (HI-6 DMS, MMB4-DMS, MINA, and RS194B). Clinical signs of toxicity were observed for 24 hours post challenge and blood cholinesterase [AChE and butyrylcholinesterase (BChE)] activity was analyzed utilizing a modified Ellman’s method. When the oxime is standardized against the HED of 2-PAM Cl for guinea pigs, the evidence from clinical observations, lethality, quality of life (QOL) scores, and cholinesterase reactivation rates across all OPs indicated that MMB4 DMS and HLö-7 DMS were the two most consistently efficacious oximes. PMID:25448441

The sources, fate, and toxicity of chemical warfare agent degradation products.

PubMed Central

Munro, N B; Talmage, S S; Griffin, G D; Waters, L C; Watson, A P; King, J F; Hauschild, V

1999-01-01

We include in this review an assessment of the formation, environmental fate, and mammalian and ecotoxicity of CW agent degradation products relevant to environmental and occupational health. These parent CW agents include several vesicants: sulfur mustards [undistilled sulfur mustard (H), sulfur mustard (HD), and an HD/agent T mixture (HT)]; nitrogen mustards [ethylbis(2-chloroethyl)amine (HN1), methylbis(2-chloroethyl)amine (HN2), tris(2-chloroethyl)amine (HN3)], and Lewisite; four nerve agents (O-ethyl S-[2-(diisopropylamino)ethyl] methylphosphonothioate (VX), tabun (GA), sarin (GB), and soman (GD)); and the blood agent cyanogen chloride. The degradation processes considered here include hydrolysis, microbial degradation, oxidation, and photolysis. We also briefly address decontamination but not combustion processes. Because CW agents are generally not considered very persistent, certain degradation products of significant persistence, even those that are not particularly toxic, may indicate previous CW agent presence or that degradation has occurred. Of those products for which there are data on both environmental fate and toxicity, only a few are both environmentally persistent and highly toxic. Major degradation products estimated to be of significant persistence (weeks to years) include thiodiglycol for HD; Lewisite oxide for Lewisite; and ethyl methyl phosphonic acid, methyl phosphonic acid, and possibly S-(2-diisopropylaminoethyl) methylphosphonothioic acid (EA 2192) for VX. Methyl phosphonic acid is also the ultimate hydrolysis product of both GB and GD. The GB product, isopropyl methylphosphonic acid, and a closely related contaminant of GB, diisopropyl methylphosphonate, are also persistent. Of all of these compounds, only Lewisite oxide and EA 2192 possess high mammalian toxicity. Unlike other CW agents, sulfur mustard agents (e.g., HD) are somewhat persistent; therefore, sites or conditions involving potential HD contamination should include an

Lessons learned from the Syrian sarin attack: evaluation of a clinical syndrome through social media.

PubMed

Rosman, Yossi; Eisenkraft, Arik; Milk, Nadav; Shiyovich, Arthur; Ophir, Nimrod; Shrot, Shai; Kreiss, Yitshak; Kassirer, Michael

2014-05-06

On the night of 21 August 2013, sarin was dispersed in the eastern outskirts of Damascus, killing 1400 civilians and severely affecting thousands more. This article aims to delineate the clinical presentation and management of a mass casualty event caused by a nerve agent as shown in the social media. Authors searched YouTube for videos uploaded of this attack and identified 210 videos. Of these, 67 met inclusion criteria and were evaluated in the final analysis.These videos displayed 130 casualties; 119 (91.5%) of which were defined as moderately injured or worse. The most common clinical signs were dyspnea (53.0%), diaphoresis (48.5%), and loss of consciousness (40.7%). Important findings included a severe shortage of supporting measures and lack of antidotal autoinjectors. Decontamination, documented in 25% of the videos, was done in an inefficient manner. Protective gear was not noticed, except for sporadic use of latex gloves and surgical masks.This is believed to be the first time that social media was used to evaluate clinical data and management protocols to better prepare against future possible events.

Miniaturized low-cost ion mobility spectrometer for fast detection of chemical warfare agents.

PubMed

Zimmermann, Stefan; Barth, Sebastian; Baether, Wolfgang K M; Ringer, Joachim

2008-09-01

Ion mobility spectrometry (IMS) is a well-known method for detecting hazardous compounds in air. Typical applications are the detection of chemical warfare agents, highly toxic industrial compounds, explosives, and drugs of abuse. Detection limits in the low part per billion range, fast response times, and simple instrumentation make this technique more and more popular. In particular, there is an increasing demand for miniaturized low-cost IMS for hand-held devices and air monitoring of public areas by sensor networks. In this paper, we present a miniaturized aspiration condenser type ion mobility spectrometer for fast detection of chemical warfare agents. The device is easy to manufacture and allows single substance identification down to low part per billion-level concentrations within seconds. The improved separation power results from ion focusing by means of geometric constraints and fluid dynamics. A simple pattern recognition algorithm is used for the identification of trained substances in air. The device was tested at the German Armed Forces Scientific Institute for Protection Technologies-NBC-Protection. Different chemical warfare agents, such as sarin, tabun, soman, US-VX, sulfur mustard, nitrogen mustard, and lewisite were tested. The results are presented here.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

PubMed

Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-02-25

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yi-Chen; Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Chiang, Te-Kuang

2015-10-15

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightlymore » smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.« less

Efficacy of human serum butyrylcholinesterase against sarin vapor.

PubMed

Saxena, Ashima; Sun, Wei; Dabisch, Paul A; Hulet, Stanley W; Hastings, Nicholas B; Jakubowski, Edward M; Mioduszewski, Robert J; Doctor, Bhupendra P

2008-09-25

Human serum butyrylcholinesterase (Hu BChE) is currently under advanced development as a pretreatment drug for organophosphate (OP) poisoning in humans. It was shown to protect mice, rats, guinea pigs, and monkeys against multiple LD(50) challenges of OP nerve agents by i.v. or s.c. bolus injections. Since inhalation is the most likely route of exposure to OP nerve agents on the battlefield or in public places, the aim of this study was to evaluate the efficacy of Hu BChE against whole-body inhalation exposure to sarin (GB) vapor. Male Göttingen minipigs were subjected to one of the following treatments: (1) air exposure; (2) GB vapor exposure; (3) pretreatment with 3 mg/kg of Hu BChE followed by GB vapor exposure; (4) pretreatment with 6.5 mg/kg of Hu BChE followed by GB vapor exposure; (5) pretreatment with 7.5 mg/kg of Hu BChE followed by GB vapor exposure. Hu BChE was administered by i.m. injection, 24h prior to whole-body exposure to GB vapor at a concentration of 4.1 mg/m(3) for 60 min, a dose lethal to 99% of untreated exposed pigs (LCt99). EEG, ECG, and pupil size were monitored throughout exposure, and blood drawn from a surgically implanted jugular catheter before and throughout the exposure period, was analyzed for acetylcholinesterase (AChE) and BChE activities, and the amount of GB present in plasma. All animals exposed to GB vapor alone or pretreated with 3 or 6.5 mg/kg of Hu BChE, died following exposure to GB vapor. All five animals pretreated with 7.5 mg/kg of Hu BChE survived the GB exposure. The amount of GB bound in plasma was 200-fold higher compared to that from plasma of pigs that did not receive Hu BChE, suggesting that Hu BChE was effective in scavenging GB in blood. Additionally, pretreatment with 7.5 mg/kg of Hu BChE prevented cardiac abnormalities and seizure activity observed in untreated animals and those treated with lower doses of Hu BChE.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

PubMed

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Tabun

MedlinePlus

... Cyanogen chloride (CK) Digitalis Case Definition: Digitalis Poisoning Ethylene glycol Fentanyls and other opioids Case Definition: Opioids ( ... Thallium Toxic alcohols Case Definition: Toxic Alcohol Poisoning Ethylene glycol Trichothecene Case Definition: Trichothecene Mycotoxin Poisoning Unidentified ...

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Apurba, E-mail: apurba.chakraborty86@gmail.com; Biswas, Dhrubes; Advanced Technology Development Centre, IIT Kharagpur, Kharagpur 721302

2015-02-23

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN ismore » to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10{sup 12 }eV{sup −1} cm{sup −2} in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10{sup 10} eV{sup −1} cm{sup −2} and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V.« less

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.

PubMed

Shen, J; Song, Y; Lee, M L; Cha, J J

2014-11-21

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems.

A comprehensive evaluation of the efficacy of leading oxime therapies in guinea pigs exposed to organophosphorus chemical warfare agents or pesticides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilhelm, Christina M., E-mail: wilhelmc@battelle.org; Snider, Thomas H., E-mail: snidert@battelle.org; Babin, Michael C., E-mail: babinm@battelle.org

The currently fielded pre-hospital therapeutic regimen for the treatment of organophosphorus (OP) poisoning in the United States (U.S.) is the administration of atropine in combination with an oxime antidote (2-PAM Cl) to reactivate inhibited acetylcholinesterase (AChE). Depending on clinical symptoms, an anticonvulsant, e.g., diazepam, may also be administered. Unfortunately, 2-PAM Cl does not offer sufficient protection across the range of OP threat agents, and there is some question as to whether it is the most effective oxime compound available. The objective of the present study is to identify an oxime antidote, under standardized and comparable conditions, that offers protection atmore » the FDA approved human equivalent dose (HED) of 2-PAM Cl against tabun (GA), sarin (GB), soman (GD), cyclosarin (GF), and VX, and the pesticides paraoxon, chlorpyrifos oxon, and phorate oxon. Male Hartley guinea pigs were subcutaneously challenged with a lethal level of OP and treated at approximately 1 min post challenge with atropine followed by equimolar oxime therapy (2-PAM Cl, HI-6 DMS, obidoxime Cl{sub 2}, TMB-4, MMB4-DMS, HLö-7 DMS, MINA, and RS194B) or therapeutic-index (TI) level therapy (HI-6 DMS, MMB4-DMS, MINA, and RS194B). Clinical signs of toxicity were observed for 24 h post challenge and blood cholinesterase [AChE and butyrylcholinesterase (BChE)] activity was analyzed utilizing a modified Ellman's method. When the oxime is standardized against the HED of 2-PAM Cl for guinea pigs, the evidence from clinical observations, lethality, quality of life (QOL) scores, and cholinesterase reactivation rates across all OPs indicated that MMB4 DMS and HLö-7 DMS were the two most consistently efficacious oximes. - Highlights: • First comprehensive evaluation of leading AChE oxime reactivators • All oximes are compared against current U.S. therapy 2-PAM Cl. • Relative therapeutic oxime efficacies against OP CWNA and pesticides • Contribution to more effective

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Towards the design of organocatalysts for nerve agents remediation: The case of the active hydrolysis of DCNP (a Tabun mimic) catalyzed by simple amine-containing derivatives.

PubMed

Barba-Bon, Andrea; Martínez-Máñez, Ramón; Sancenón, Félix; Costero, Ana M; Gil, Salvador; Pérez-Pla, Francisco; Llopis, Elisa

2015-11-15

We report herein a study of the hydrolysis of Tabun mimic DCNP in the presence of different amines, aminoalcohols and glycols as potential suitable organocatalysts for DCNP degradation. Experiments were performed in CD3CN in the presence of 5% D2O, which is a suitable solvent mixture to follow the DCNP hydrolysis. These studies allowed the definition of different DCNP depletion paths, resulting in the formation of diethylphosphoric acid, tetraethylpyrophosphate and phosphoramide species as final products. Without organocatalysts, DCNP hydrolysis occurred mainly via an autocatalysis path. Addition of tertiary amines in sub-stoichiometric amounts largely enhanced DCNP depletion whereas non-tertiary polyamines reacted even faster. Glycols induced very slight increment in the DCNP hydrolysis, whereas DCNP hydrolysis increased sharply in the presence of certain aminoalcohols especially, 2-(2-aminoethylamino)ethanol. For the latter compound, DCNP depletion occurred ca. 80-fold faster than in the absence of organocatalysts. The kinetic studies revealed that DCNP hydrolysis in the presence of 2-(2-aminoethylamino)ethanol occurred via a catalytic process, in which the aminoalcohol was involved. DCNP hydrolysis generally depended strongly on the structure of the amine, and it was found that the presence of the OHCH2CH2N moiety in the organocatalyst structure seems important to induce a fast degradation of DCNP. Copyright © 2015 Elsevier B.V. All rights reserved.

Acute toxicity of some nerve agents and pesticides in rats.

PubMed

Misik, Jan; Pavlikova, Ruzena; Cabal, Jiri; Kuca, Kamil

2015-01-01

Highly toxic organophosphorus compounds (V- and G-nerve agents) were originally synthesized for warfare or as agricultural pesticides. Data on their acute toxicity are rare and patchy. Therefore, there is a need for integrated summary comparing acute toxicity of organophosphates using different administration routes in the same animal model with the same methodology. Based on original data, a summary of in vivo acute toxicity of selected V- and G-nerve agents (tabun, sarin, soman, VX, Russian VX) and organophosphates paraoxon (POX) and diisopropyl fluorophosphate (DFP) in rats has been investigated. Male Wistar rats were exposed to organophosphates in several administration routes (i.m., i.p., p.o, s.c., p.c.). The acute toxicity was evaluated by the assessment of median lethal dose (LD50, mg kg(-1)) 2, 4, and 24 hours post exposure. V-agents were the most toxic presented with LD50 ranged from 0.0082 mg kg(-1) (VX, i.m.) to 1.402 mg kg(-1) (Russian VX, p.o.), followed by G-agents (LD50 = 0.069 mg kg(-1)/soman, i.m./ - 117.9 mg kg(-1)/sarin, p.c./), organophosphate POX and DFP (LD50 = 0.321 mg kg(-1)/POX, i.m./ - 420 mg kg(-1)/DFP, p.c./). Generally, i.m. administration was the most toxic throughout all tested agents and ways of administration (LD50 = 0.0082 mg kg(-1)/VX/ - 1.399 mg kg(-1)/DFP/) whereas p.c. way was responsible for lowest acute toxicity (LD50 = 0.085 mg kg(-1)/VX/ - 420 mg kg(-1)/DFP/). The acute toxicity of selected organophosphorus compounds is summarized throughout this study. Although the data assessed in rats are rather illustrative prediction for human, it presents a valuable contribution, indicating the toxic potential and harmfulness of organophosphates.

Ultraviolet Raman scattering from persistent chemical warfare agents

NASA Astrophysics Data System (ADS)

Kullander, Fredrik; Wästerby, Pär.; Landström, Lars

2016-05-01

Laser induced Raman scattering at excitation wavelengths in the middle ultraviolet was examined using a pulsed tunable laser based spectrometer system. Droplets of chemical warfare agents, with a volume of 2 μl, were placed on a silicon surface and irradiated with sequences of laser pulses. The Raman scattering from V-series nerve agents, Tabun (GA) and Mustard gas (HD) was studied with the aim of finding the optimum parameters and the requirements for a detection system. A particular emphasis was put on V-agents that have been previously shown to yield relatively weak Raman scattering in this excitation band.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

NASA Astrophysics Data System (ADS)

Philipps, Jan M.; Hölzel, Sara; Hille, Pascal; Schörmann, Jörg; Chatterjee, Sangam; Buyanova, Irina A.; Eickhoff, Martin; Hofmann, Detlev M.

2018-05-01

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In)GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed.

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T.

2015-08-21

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations,more » the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.« less

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Skrobas, K.; Suski, T.; Christensen, N. E.; Svane, A.

2015-08-01

The electronic structures of short period mGaN/nGayAl1-yN and mInyGa1-yN/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Efficient Ga(As)Sb quantum dot emission in AlGaAs by GaAs intermediate layer

NASA Astrophysics Data System (ADS)

Loeber, Thomas Henning; Richter, Johannes; Strassner, Johannes; Heisel, Carina; Kimmle, Christina; Fouckhardt, Henning

2013-03-01

Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8•1010 cm-2 by optimization of growth temperature, Sb/Ga flux pressure ratio, and coverage. Additionally, the QD emission wavelength could be chosen precisely with these growth parameters in the range between 876 and 1035 nm. Here we report a photoluminescence (PL) intensity improvement for the case with AlGaAs barriers. Again growth parameters and layer composition are varied. The aluminium content is varied between 0 and 90%. Reflectance anisotropy spectroscopy (RAS) is used as insitu growth control to determine growth rate, layer thickness, and AlGaAs composition. Ga(As)Sb QDs, directly grown in AlxGa1-xAs emit no PL signal, even with a very low x ≈ 0.1. With additional around 10 nm thin GaAs intermediate layers between the Ga(As)Sb QDs and the AlGaAs barriers PL signals are detected. Samples with 4 QD layers and AlxGa1-xAs/GaAs barriers in between are grown. The thickness and composition of the barriers are changed. Depending on these values PL intensity is more than 4 times as high as in the case with simple GaAs barriers. With these results efficient Ga(As)Sb QD lasers are realized, so far only with pure GaAs barriers. Our index-guided broad area lasers operate continuous-wave (cw) @ 90 K, emit optical powers of more than 2•50 mW and show a differential quantum efficiency of 54% with a threshold current density of 528 A/cm2.

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

NASA Astrophysics Data System (ADS)

Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

1998-05-01

InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

NASA Astrophysics Data System (ADS)

Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zech, E. S.; Chang, A. S.; Martin, A. J.

2013-08-19

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

The application of single particle aerosol mass spectrometry for the detection and identification of high explosives and chemical warfare agents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Audrey Noreen

2006-01-01

Single Particle Aerosol Mass Spectrometry (SPAMS) was evaluated as a real-time detection technique for single particles of high explosives. Dual-polarity time-of-flight mass spectra were obtained for samples of 2,4,6-trinitrotoluene (TNT), 1,3,5-trinitro-1,3,5-triazinane (RDX), and pentaerythritol tetranitrate (PETN); peaks indicative of each compound were identified. Composite explosives, Comp B, Semtex 1A, and Semtex 1H were also analyzed, and peaks due to the explosive components of each sample were present in each spectrum. Mass spectral variability with laser fluence is discussed. The ability of the SPAMS system to identify explosive components in a single complex explosive particle (~1 pg) without the need formore » consumables is demonstrated. SPAMS was also applied to the detection of Chemical Warfare Agent (CWA) simulants in the liquid and vapor phases. Liquid simulants for sarin, cyclosarin, tabun, and VX were analyzed; peaks indicative of each simulant were identified. Vapor phase CWA simulants were adsorbed onto alumina, silica, Zeolite, activated carbon, and metal powders which were directly analyzed using SPAMS. The use of metal powders as adsorbent materials was especially useful in the analysis of triethyl phosphate (TEP), a VX stimulant, which was undetectable using SPAMS in the liquid phase. The capability of SPAMS to detect high explosives and CWA simulants using one set of operational conditions is established.« less

Organophosphorus poisoning (acute).

PubMed

2007-03-01

Acute organophosphorus poisoning occurs after dermal, respiratory, or oral exposure to either low-volatility pesticides (e.g. chlorpyrifos, dimethoate) or high-volatility nerve gases (e.g. sarin, tabun). Most cases occur in resource-poor countries as a result of occupational or deliberate exposure to organophosphorus pesticides. We conducted a systematic review and aimed to answer the following clinical question: What are the effects of treatments for acute organophosphorus poisoning? We searched: Medline, Embase, The Cochrane Library and other important databases up to August 2006 (Clinical Evidence reviews are updated periodically, please check our website for the most up-to-date version of this review). We included harms alerts from relevant organisations such as the US Food and Drug Administration (FDA) and the UK Medicines and Healthcare products Regulatory Agency (MHRA). We found 22 systematic reviews, RCTs, or observational studies that met our inclusion criteria. We performed a GRADE evaluation of the quality of evidence for interventions. In this systematic review we present information relating to the effectiveness and safety of the following interventions: activated charcoal, alpha2 adrenergic receptor agonists, atropine, benzodiazepines, butyrylcholinesterase replacement therapy, cathartics, extracorporeal clearance, gastric lavage, glycopyrronium bromide, ipecacuanha, magnesium sulphate, milk or other home remedies, N-methyl-D-aspartate receptor antagonists, organophosphorus hydrolases, oximes, sodium bicarbonate, washing the poisoned person and removing contaminated clothing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, L.W.; Talbot, B.G.; Lennox, W.J.

A pretreatment for organophosphorus (OP) anticholinesterase (e. g. , soman) intoxication should prevent lethality and convulsions (CNV) at 2 LD50s and be behavioral-decrement-free when given alone. Behavioral-deficit-free pretreatment regimens (PRGs) for guinea pigs consisted of Physostigmine (0.15 mg/kg, im) and adjunct. Adjuncts MG/KG, IM tested were akineton 0.25, aprophen 8, trihexyphenidyl 2, atropine 16, azaprophen 51, BENACTYZINE 1.25, cogentin 4, dextromethorphan 7.5, ethopropazine 12, kemadrin 11, MEMANTINE 5, promethazine 5, scopolamine 0.081 AND CONTROL 2. PRGs were given 30 min before soman (60 ug/kg, sc; 2 LD50S) or other OP agents. Animals were then observed and graded for signs ofmore » intoxication, including CNV at 7 time points and at 24 hr. Physostigmine alone reduced the incidence of CNV and lethality induced by 2 LD50s of soman by 42 and 60%, respectively. All of the PRGs tested abolished lethality and 12 shortened recovery time to 2 hr or less. Also, PRGs including azaprophen or atropine prevented CNV. When selected PRGs were tested against intoxication by sarin, tabun or VX, the efficacy was generally superior to that for soman. The data show that several PRGs are effective against soman intoxication in guinea pigs. Pretreatment, physostigmine, anticholinesterases, soman (GD).« less

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Kang, He; Li, Hui-Jie; Yang, Shao-Yan; Zhang, Wei; Zhu, Ming; Liu, Li; Li, Nan

2018-01-01

The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103-104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be caused by the rather different electric field distributions in Ga- and N-polar AlGaN/GaN heterostructures. In addition, we find that an AlN interlayer can effectively reduce the alloy scattering, mainly due to the large band offset between AlN and GaN. The calculated mobilities have been compared with the experiment results and good agreements are found. We believe that our results are important for the design of AlGaN/GaN heterostructure-based devices, especially the N-polar ones.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Effects of low-level sarin and cyclosarin exposure on hippocampal subfields in Gulf War Veterans.

PubMed

Chao, Linda L; Kriger, Stephen; Buckley, Shannon; Ng, Peter; Mueller, Susanne G

2014-09-01

More than 100,000 US troops were potentially exposed to chemical warfare agents sarin (GB) and cyclosarin (GF) when an ammunition dump at Khamisiyah, Iraq was destroyed during the 1991 Gulf War (GW). We previously reported reduced hippocampal volume in GW veterans with suspected GB/GF exposure relative to matched, unexposed GW veterans estimated from 1.5T magnetic resonance images (MRI). Here we investigate, in a different cohort of GW veterans, whether low-level GB/GF exposure is associated with structural alterations in specific hippocampal subfields, estimated from 4T MRI. The Automatic Segmentation of Hippocampal Subfields (ASHS) technique was used to quantify CA1, CA2, CA3 and dentate gyrus (DG), and subiculum (SUB) subfields volumes from high-resolution T2-weighted images acquired on a 4T MR scanner in 56 GW veterans with suspected GB/GF exposure and 56 "matched" unexposed GW veterans (mean age 49±7 years). GB/GF exposed veterans had smaller CA2 (p=0.003) and CA3/DG (p=0.01) subfield volumes compared to matched, unexposed GW veterans. There were no group difference in total hippocampal volume, quantified with FreeSurfer, and no dose-response relationship between estimated levels of GB/GF exposure and total hippocampal or subfield volume. These findings extend our previous report of structural alterations in the hippocampi of GW veterans with suspected GB/GF exposure to volume changes in the CA2, CA3, and DG hippocampal subfields in a different cohort of GW veterans with suspected GB/GF exposure. Published by Elsevier B.V.

Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2017-02-01

GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

Demonstration of a Retrofit Corrosion-Resistant Fire Hydrant Which Also Protects Against Deliberate Contamination of Critical Army Water Supplies

DTIC Science & Technology

2010-02-01

0.4 Sodium Cyanide 3.7 Fast acting, readily available Sodium Fluoroacetate 1.7 Tasteless, Colorless, Odorless Thallium Nitrate 3.4 Sarin 1 VX 0.15 L iq...TurbChlor TOC 1080 Aflatoxin Cyanide "VX" BUILDING STRONG®27 Beijing Olympics  GuardianBlue Systems selected for securing drinking water during the...Closed BUILDING STRONG®54 Features 304 Stainless Replacement Stem, Tensile Strength 80 Ksi E Coated Sleeve/Seat 11 ga, A-569 Hot Rolled Steel

Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers

NASA Astrophysics Data System (ADS)

Saini, Basant; Adhikari, Sonachand; Pal, Suchandan; Kapoor, Avinsahi

2017-07-01

The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm-3). The simulations are performed for four InxGa1-xN/GaN heterostructures (x = 10%, 15%, 20% and 25%), thus investigating the impact of PML for low as well as high indium containing absorber regions. Use of PML presents a suitable alternative to counter the effects of polarization-induced electric fields arising at low p-GaN doping density especially for absorber regions with high indium (>10%). It is seen that it not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barriers existing at i-InGaN/p-GaN heterojunction. The improvement in photovoltaic properties of the heterostructures even at low p-GaN doping validates this claim.

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Self-organization of palladium nanoislands on GaN and AlxGa1-xN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Stafiniak, Andrzej; Szymański, Tomasz; Paszkiewicz, Regina

2017-12-01

We report on systematic study on the dewetting process of thin Pd layer and self-organized Pd nano-islands on SiO2, GaN and AlxGa1-xN/GaN heterostructures with various Al content. The influence of factors such as the thickness of metal layer, type of top layer of AlGaN/GaN heterostructures, temperature and time of annealing process on the dimensions, shapes and density of Pd islands was analyzed. Comparing the behavior of self-organization of Pd islands on Al0.25Ga0.75N/GaN and SiO2 we can conclude that solid-state dewetting process on SiO2 occures much faster than on Al0.25Ga0.75N. For substrates with SiO2 this process requires less energy and can arise for thicker layer. On the Al0.25Ga0.75N surface the islands take more crystalline shape which is probably due to surface reconstruction of Pd-Ga alloy thin layer on interface. For thin metal layer the coalescence of islands into larger islands similar to Ostwald ripening mechanism was observed. Greater surface roughness of AlxGa1-xN/GaN heterostructures with higher Al content causes an increase of surface density of islands and the reduction of their sizes which improves the roundness. In case of GaN and AlxGa1-xN layers with Al content lower than 20%, the surface degradation caused by annealing process was observed. Probably, this is due to the decomposition of layers with gallium droplet formation on catalytic metal islands.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

PubMed Central

Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

2014-01-01

Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R.

2015-12-28

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaNmore » layers.« less

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.;

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

NASA Astrophysics Data System (ADS)

Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

2016-11-01

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon andmore » oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.« less

Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

NASA Astrophysics Data System (ADS)

Abdullah, Rafid A.; Ibrahim, Kamarulazizi

2010-07-01

ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

Predictions of ground states of LiGa and NaGa

NASA Astrophysics Data System (ADS)

Boldyrev, Alexander I.; Simons, Jack

1996-11-01

The ground and very low-lying excited states of LiGa and NaGa have been studied using high level ab initio techniques. At the QCISD(T)/6-311 + G(2df) level of theory, the 1Σ + state was found to be the most stable for both molecules. The equilibrium bond lengths and dissociation energies were found to be: R( LiGa) = 2.865 Å and D0(LiGa) = 22.3 kcal/mol and R( NaGa) = 3.174 Å and D0(NaGa) = 17.1 kcal/mol. Trends within the ground electronic states of LiB, NaB, LiAl, NaAl, LiGa and NaGa are discussed and predictions for related AlkM (Alk LiCs and MBTl) species are made.

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

NASA Astrophysics Data System (ADS)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Carrier quenching in InGaP/GaAs double heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.

2015-08-14

Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes tomore » reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.« less

InGaAsN/GaAs heterojunction for multi-junction solar cells

DOEpatents

Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

2001-01-01

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

CryoSat SAR/SARin Level1b products: assessment of BaselineC and improvements towards BaselineD

NASA Astrophysics Data System (ADS)

Scagliola, Michele; Fornari, Marco; Bouffard, Jerome; Parrinello, Tommaso

2017-04-01

CryoSat was launched on the 8th April 2010 and is the first European ice mission dedicated to the monitoring of precise changes in the thickness of polar ice sheets and floating sea ice. Cryosat carries an innovative radar altimeter called the Synthetic Aperture Interferometric Altimeter (SIRAL), that transmits pulses at a high pulse repetition frequency thus making the received echoes phase coherent and suitable for azimuth processing. This allows to reach a significantly improved along track resolution with respect to traditional pulse-width limited altimeters. CryoSat is the first altimetry mission operating in SAR mode and continuous improvements in the Level1 Instrument Processing Facility (IPF1) are being identified, tested and validated in order to improve the quality of the Level1b products. The current IPF, Baseline C, was released in operation in April 2015 and the second CryoSat reprocessing campaign was jointly initiated, taking benefit of the upgrade implemented in the IPF1 processing chain but also of some specific configurations for the calibration corrections. In particular, the CryoSat Level1b BaselineC products generated in the framework of the second reprocessing campaign include refined information for what concerns the mispointing angles and the calibration corrections. This poster will thus detail thus the evolutions that are currently planned for the CryoSat BaselineD SAR/SARin Level1b products and the corresponding quality improvements that are expected.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

PubMed

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Nuese, C. J.; Olsen, G. H.

1978-01-01

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

Magnetometory Measurement of AlGaN/GaN 2DEG

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2004-03-01

AlGaN/GaN heterostructure devices have been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the magnetometory measurement of AlGaN/GaN 2DEG at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540 cm^2/Vs and 6.6 × 10^12 cm-2, respectively. When the temperature is lower than 4.5 K the hysteresis of magnetometric data is observed near zero magnetic field. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears and the slope of magnetometric data with respect to magnetic field becomes lower as obeying Currie-Weiss law. In general the hysteresis and Currie-Weiss law behavior in magnetometric data imply the possibility of the ferromagnetism, but the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

In Silico Pharmacophore Model for Tabun-Inhibites Acetylcholinesterase Reactivators: A study of Their Stereoelectronic Properties

DTIC Science & Technology

2009-01-01

Army Institute of Research, 503 Robert Grant AVenue, SilVer Spring, Maryland 20910, and Center for AdVanced Studies and Department of Toxicology ...Department of Toxicology , Faculty of Military Health Sciences. Chem. Res. Toxicol. XXXX, , 000 A 10.1021/tx900192u  XXXX American Chemical Society...GA-inhibited AChE derived from theoretical stereoelectronic and three-dimensional (3D) quantitative struc- ture-activity relationship ( QSAR

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Lin'an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A andmore » 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.« less

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

PubMed

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2013 CFR

2013-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2011 CFR

2011-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2014 CFR

2014-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2012 CFR

2012-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

40 CFR 180.1098 - Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium Gibberellate...

Code of Federal Regulations, 2010 CFR

2010-07-01

... and GA4 + GA7), and Sodium or Potassium Gibberellate]; exemption from the requirement of a tolerance... Tolerances § 180.1098 Gibberellins [Gibberellic Acids (GA3 and GA4 + GA7), and Sodium or Potassium... potassium gibberellate] in or on all food commodities when used as plant regulators on plants, seeds, or...

Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru

2014-10-27

Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to entermore » the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)« less

Ga flux dependence of Er-doped GaN luminescent thin films

NASA Astrophysics Data System (ADS)

Lee, D. S.; Steckl, A. J.

2002-02-01

Er-doped GaN thin films have been grown on (111) Si substrates with various Ga fluxes in a radio frequency plasma molecular beam epitaxy system. Visible photoluminescence (PL) and electroluminescence (EL) emission at 537/558 nm and infrared (IR) PL emission at 1.5 μm from GaN:Er films exhibited strong dependence on the Ga flux. Both visible and IR PL and visible EL increase with the Ga flux up to the stoichiometric growth condition, as determined by growth rate saturation. Beyond this condition, all luminescence levels abruptly dropped to the detection limit with increasing Ga flux. The Er concentration, measured by secondary ion mass spectroscopy and Rutherford backscattering, decreases with increasing Ga flux under N-rich growth conditions and remains constant above the stoichiometric growth condition. X-ray diffraction indicated that the crystalline quality of the GaN:Er film was improved with increasing Ga flux up to stoichiometric growth condition and then saturated. Er ions in the films grown under N-rich conditions appear much more optically active than those in the films grown under Ga-rich conditions.

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

PubMed

Jegenyes, Nikoletta; Morassi, Martina; Chrétien, Pascal; Travers, Laurent; Lu, Lu; Julien, Francois H; Tchernycheva, Maria; Houzé, Frédéric; Gogneau, Noelle

2018-05-25

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm². These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

Study of GaN nanorods converted from β-Ga2O3

NASA Astrophysics Data System (ADS)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

PubMed

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Sc(2)MgGa(2) and Y(2)MgGa(2).

PubMed

Sahlberg, Martin; Andersson, Yvonne

2009-03-01

Scandium magnesium gallide, Sc(2)MgGa(2), and yttrium magnesium gallide, Y(2)MgGa(2), were synthesized from the corresponding elements by heating under an argon atmosphere in an induction furnace. These intermetallic compounds crystallize in the tetragonal Mo(2)FeB(2)-type structure. All three crystallographically unique atoms occupy special positions and the site symmetries of (Sc/Y, Ga) and Mg are m2m and 4/m, respectively. The coordinations around Sc/Y, Mg and Ga are pentagonal (Sc/Y), tetragonal (Mg) and triangular (Ga) prisms, with four (Mg) or three (Ga) additional capping atoms leading to the coordination numbers [10], [8+4] and [6+3], respectively. The crystal structure of Sc(2)MgGa(2 )was determined from single-crystal diffraction intensities and the isostructural Y(2)MgGa(2) was identified from powder diffraction data.

Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates

NASA Technical Reports Server (NTRS)

Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoc, H.

1987-01-01

The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

PubMed

Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

2013-05-15

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

Magnetoresistance Study in a GaAs/InGaAs/GaAs Delta-Doped Quantum Well

NASA Astrophysics Data System (ADS)

Hasbun, J. E.

1997-03-01

The magnetoresistance of a GaAs/Ga_0.87In_0.13As/GaAs with an electron concentration of N_s=6.3x10^11cm-2 is calculated at low temperature for a magnetic field range of 2-30 tesla and low electric field. The results obtained for the magnetotransport are compared with the experimental work of Herfort et al.(J. Herfort, K.-J. Friedland, H. Kostial, and R. Hey, Appl. Phys. Lett. V66, 23 (1995)). While the logitudinal magnetoresistance agrees reasonably well with experiment, the Hall resistance slope reflects a classical shape; however, its second derivative seems to show oscillations that are consistent with the Hall effect plateaus seen experimentally. Albeit with a much higher electron concentration, earlier calculationsfootnote J. Hasbun, APS Bull. V41, 419 (1996) for an Al_0.27Ga_0.73/GaAs /Al_0.27Ga_0.73As quantum well shows similar behavior. This work has been carried out with the use of a quantum many body approach employed in earlier work(J. Hasbun, APS Bull. V41, 1659 (1996)).

Effects of low-level sarin and cyclosarin exposure on hippocampal microstructure in Gulf War Veterans.

PubMed

Chao, Linda L; Zhang, Yu

2018-05-04

In early March 1991, shortly after the end of the Gulf War (GW), a munitions dump was destroyed at Khamisiyah, Iraq. Later, in 1996, the dump was found to have contained the organophosphorus (OP) nerve agents sarin and cyclosarin. We previously reported evidence of smaller hippocampal volumes in GW veterans with predicted exposure to the Khamisiyah plume compared to unexposed GW veterans. To investigate whether these macroscopic hippocampal volume changes are accompanied by microstructural alterations in the hippocampus, the current study acquired diffusion-tensor imaging (DTI), T1-, and T2-weighted images from 170 GW veterans (mean age: 53 ± 7 years), 81 of whom had predicted exposure to the Khamisiyah plume according to Department of Defense (DOD) plume modeling. We examined fractional anisotropy (FA), mean diffusivity (MD), and grey matter (GM) density from a hippocampal region of interest (ROI). Results indicate that, even after accounting for total hippocampal GM density (or hippocampal volume), age, sex, apolipoprotein ε4 genotype, and potential confounding OP pesticide exposures, hippocampal MD significantly predicted Khamisiyah exposure status (model p = 0.005, R 2  = 0.215, standardized coefficient β = 0.26, t = 2.85). Hippocampal MD was also inversely correlated with verbal memory learning performance in the entire study sample (p = 0.001). There were no differences in hippocampal FA or GM density; however, veterans with predicted Khamisiyah exposure had smaller hippocampal volumes compared to unexposed veterans. Because MD is sensitive to general microstructural disruptions that lead to increased extracellular spaces due to neuronal death, inflammation and gliosis, and/or to axonal loss or demyelination, these findings suggest that low-level exposure to the Khamisiyah plume has a detrimental, lasting effects on both macro- and micro-structure of the hippocampus. Copyright © 2018. Published by Elsevier Inc.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

GaSbBi/GaSb quantum-well and wire laser diodes

NASA Astrophysics Data System (ADS)

Ridene, Said

2018-06-01

In this work, we present detailed theoretical studies of the optical gain spectra and the emission wavelength of GaSb1-xBix/GaSb and traditional GaAs1-xBix/GaAs dilute-bismide quantum wells and wires (QWs, QWRs) focusing on comparison between their performances. It is found that the optical gain and the emission wavelength of the GaSb-based QW and QWRs lasers would be considerably greater than that of the GaAs-based QW lasers and QWRs for the same QW-, QWR-width, Bi-content and carrier density. The theoretical results were found to be in good agreement with available experimental data, especially for the emission wavelength given by GaSb-based QW laser diodes.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation

NASA Astrophysics Data System (ADS)

Arkusha, Yu. V.; Prokhorov, E. D.; Storozhenko, I. P.

2004-09-01

The frequency dependence of the generation efficiency of an mm- -nn:In:InxGaGa1-1-xAs- As-nn:GaAs-:GaAs-nn++:GaAs TED with the 2.5-mm long active region is calculated. The optimum values - which yield the diode maximum generation efficiency - for the :GaAs TED with the 2.5-mm long active region is calculated. The optimum values - which yield the diode maximum generation efficiency - for the nn:In:InxGaGa1-1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined.As cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined.

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

PubMed

Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E; Draxl, C; Trampert, A

2016-02-12

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%

NASA Astrophysics Data System (ADS)

Nattermann, L.; Beyer, A.; Ludewig, P.; Hepp, T.; Sterzer, E.; Volz, K.

2017-04-01

Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers for telecommunications as well as sensing applications. In the last several years a growing body of literature has emerged, particularly on the growth of Ga(AsBi). However, the metal organic vapor phase epitaxy growth of Ga(AsBi) with high amounts of Bi, which are necessary to overcome Auger recombination and reach telecommunications wavelengths, still remains a challenge. Ga(PBi) could be a promising alternative, but has not been deposited with significant amounts of Bi so far. A second argument for Ga(PBi) is that it could be grown on GaP, which was already deposited on Si. A number of researchers have reported theoretical calculations on the band structure of Ga(PBi), but experimental results are still lacking. In this work we present the first Ga(PBi) structures, grown by metal organic vapor phase epitaxy on GaP and on GaP on Si. By careful characterization with high resolution X-ray diffraction, atomic force microscopy, secondary ion mass spectrometry and scanning transmission electron microscopy, we will show that we have realized high quality Ga(PBi) with Bi fractions over 8%.

A hole modulator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

NASA Astrophysics Data System (ADS)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

Design, evaluation and structure-activity relationship studies of the AChE reactivators against organophosphorus pesticides.

PubMed

Musilek, Kamil; Dolezal, Martin; Gunn-Moore, Frank; Kuca, Kamil

2011-07-01

Organophosphate pesticides (OPPs; e.g. chlorpyrifos, diazinon, paraoxon) are a wide and heterogeneous group of organophosphorus compounds. Their biological activity of inhibiting acetylcholinesterase (AChE) or butyrylcholinesterase (BChE) ranks them as life endangering agents. The necessary treatment after OPP exposure involves the use of parasympatolytics (e.g. atropine), oxime reactivators (e.g. obidoxime), and anticonvulsive drugs (e.g. diazepam). Therefore, the reactivators of AChE are essential compounds in the treatment of OPP intoxications. Commercial AChE reactivators (e.g. pralidoxime, HI-6, obidoxime, trimedoxime, methoxime) were originally developed for other members of the organophosphate family, such as nerve agents (e.g. sarin, soman, tabun, VX). Pralidoxime, HI-6, and methoxime were found to be weak reactivators of OPP-inhibited AChE. Obidoxime and trimedoxime showed satisfactory reactivation against various OPPs with minor toxicity issues. During the last two decades, the treatment of OPP exposure has become more widely discussed because of growing agricultural production, industrialization, and harmful social issues (e.g. suicides). In this review is the summarized design, evaluation, and structure-activity relationship studies of recently produced AChE reactivators. Since pralidoxime, over 300 oximes have been produced or tested against OPP poisoning, and several novel compounds show very promising abilities as comparable (or higher) to commercial oximes. Some of these are highlighted for their further testing of OPP exposure and, additionally, the main structure-activity relationship of AChE reactivators against OPP is discussed. © 2009 Wiley Periodicals, Inc.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M.

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reducedmore » channel thermal conductivity must be considered.« less

A hole modulator for InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei

2015-02-09

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall holemore » concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.« less

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa

We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extractingmore » binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.« less

Current-induced switching in CoGa/L10 MnGa/(CoGa)/Pt structure with different thicknesses

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Mizukami, S.

2018-06-01

In this paper, we present the results of our study into current-induced spin-orbit torque (SOT) switching in perpendicularly magnetized CoGa/MnGa/Pt trilayers with different thicknesses of MnGa and Pt. The SOT switching was observed for all films that undergo Joule heating. We also investigate SOT switching in the bottom (CoGa)/MnGa/top(CoGa/Pt) films with different top layers. Although both the bottom and top layers contribute to the SOT, the relative magnitudes of the switching current densities JC in the top and bottom layers indicate that the SOT is dominant in the top layer. The JC as a function of thickness is discussed in terms of the magnetic properties and resistivity. Experimental data suggested that the MnGa thickness dependence of JC may originate from the perpendicular magnetic anisotropy thickness product Kueff t value. On the other hand, JC as a function of the Pt thickness shows weak dependence. This may be attributed to the slight change of spin-Hall angle θSH value with different thicknesses of Pt, when we assumed that the SOT switching is primarily due to the spin-Hall effect.

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer

NASA Astrophysics Data System (ADS)

Yan, P. F.; Du, K.; Sui, M. L.

2012-10-01

Due to the special dislocation slip systems in hexagonal lattice, dislocation dominated deformations in hexagonal structured multilayers are significantly different from that in cubic structured systems. In this work, we have studied the strain relaxation mechanism in hexagonal structured InGaN/AlGaN/GaN multilayers with transmission electron microscopy. Due to lattice mismatch, the strain relaxation was found initiated with the formation of pyramidal dislocations. Such dislocations locally lie at only one preferential slip direction in the hexagonal lattice. This preferential slip causes a shear stress along the basal planes and consequently leads to dissociation of pyramidal dislocations and operation of the basal plane slip system. The compressive InGaN layers and "weak" AlGaN/InGaN interfaces stimulate the dissociation of pyramidal dislocations at the interfaces. These results enhance the understanding of interactions between dislocations and layer interfaces and shed new lights on deformation mechanism in hexagonal-lattice multilayers.

Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation.

PubMed

Bietti, Sergio; Basso Basset, Francesco; Scarpellini, David; Fedorov, Alexey; Ballabio, Andrea; Esposito, Luca; Elborg, Martin; Kuroda, Takashi; Nemcsics, Akos; Toth, Lajos; Manzoni, Cristian; Vozzi, Caterina; Sanguinetti, Stefano

2018-06-18

A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule fabrication and the metal nanoparticle alignment is discussed. The tuning of the relative positioning of quantum dot molecules and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical quantum dot molecule was evaluated on the base of the morphological characterizations performed by Atomic Force Microscopy and cross sectional Scanning Electron Microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition. . © 2018 IOP Publishing Ltd.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Erdong; Li, Qiming; Swartzentruber, Brian

2015-11-25

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

Simulation and optimization performance of GaAs/GaAs0.5Sb0.5/GaSb mechanically stacked tandem solar cells

NASA Astrophysics Data System (ADS)

Tayubi, Y. R.; Suhandi, A.; Samsudin, A.; Arifin, P.; Supriyatman

2018-05-01

Different approaches have been made in order to reach higher solar cells efficiencies. Concepts for multilayer solar cells have been developed. This can be realised if multiple individual single junction solar cells with different suitably chosen band gaps are connected in series in multi-junction solar cells. In our work, we have simulated and optimized solar cells based on the system mechanically stacked using computer simulation and predict their maximum performance. The structures of solar cells are based on the single junction GaAs, GaAs0.5Sb0.5 and GaSb cells. We have simulated each cell individually and extracted their optimal parameters (layer thickness, carrier concentration, the recombination velocity, etc), also, we calculated the efficiency of each cells optimized by separation of the solar spectrum in bands where the cell is sensible for the absorption. The optimal values of conversion efficiency have obtained for the three individual solar cells and the GaAs/GaAs0.5Sb0.5/GaSb tandem solar cells, that are: η = 19,76% for GaAs solar cell, η = 8,42% for GaAs0,5Sb0,5 solar cell, η = 4, 84% for GaSb solar cell and η = 33,02% for GaAs/GaAs0.5Sb0.5/GaSb tandem solar cell.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

PubMed

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

Laser induced OMCVD growth of AlGaAs on GaAs

NASA Technical Reports Server (NTRS)

Wilt, David M.; Warner, Joseph D.; Aron, Paul R.; Pouch, John J.; Hoffman, Richard W., Jr.

1987-01-01

A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

On the dissolution properties of GaAs in Ga

NASA Technical Reports Server (NTRS)

Davidson, M. C.; Moynahan, A. H.

1977-01-01

The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

NASA Astrophysics Data System (ADS)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Characterisation of Ga-coated and Ga-brazed aluminium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferchaud, E.; Christien, F., E-mail: frederic.christien@univ-nantes.fr; Barnier, V.

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples showsmore » that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.« less

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

PubMed

Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; von Molnár, Stephan; Xiong, Peng

2013-04-10

Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

PubMed Central

Sadofyev, Yuri G.; Samal, Nigamananda

2010-01-01

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

Self-organized formation of GaSb/GaAs quantum rings.

PubMed

Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

2008-12-19

Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

NASA Astrophysics Data System (ADS)

Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2018-05-01

Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

NASA Astrophysics Data System (ADS)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Hai-Ming; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Liang, Baolai, E-mail: bliang@cnsi.ucla.edu

2015-03-09

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

NASA Technical Reports Server (NTRS)

Meier, D. L.; Szedon, J. R.; Bartko, J.; Chung, M. A.

1989-01-01

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

1982-01-01

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

Dependence of Ag/Ga composition ratio in AgGaSe2 thin film

NASA Astrophysics Data System (ADS)

Matsuo, H.; Yoshino, K.; Ikari, T.

2006-09-01

AgGaSe2 thin film was deposited on glass substrates by vacuum evaporation method. The starting material was mixed Ag2Se and Ga2Se3 powders. Ag/Ga ratios of the samples were 1.5, 1.2, 1.0, 0.8, 0.7 and 0.4. The samples were annealed from 100 to 600 °C for 10 min. After these processes, single phase AgGaSe2 thin films could be obtained except Ag/Ga ratio of 0.4 at annealing temperature of 600 °C. Ag-rich samples had large grain. On the other hand, Ga-rich samples had small grain. Furthermore, Ga-rich and Ag-rich samples indicated p- and n-types because of Ag- and/or Ga-vacancy and Se-vacancy, respectively.

Comparison of as-grown and annealed GaN/InGaN : Mg samples

NASA Astrophysics Data System (ADS)

Deng, Qingwen; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Lin, Defeng; Jiang, Lijuan; Feng, Chun; Li, Jinmin; Wang, Zhanguo; Hou, Xun

2011-08-01

Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7 K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N2 ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.

Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Shengbiao; Wen, Huanming; Wu, Ruihong; Wang, Xiaojun; Wang, Xiaoliang

2009-11-01

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Atomic-scale structure and electronic properties of GaN/GaAs superlattices

NASA Astrophysics Data System (ADS)

Goldman, R. S.; Feenstra, R. M.; Briner, B. G.; O'Steen, M. L.; Hauenstein, R. J.

1996-12-01

We have investigated the atomic-scale structure and electronic properties of GaN/GaAs superlattices produced by nitridation of a molecular beam epitaxially grown GaAs surface. Using cross-sectional scanning tunneling microscopy (STM) and spectroscopy, we show that the nitrided layers are laterally inhomogeneous, consisting of groups of atomic-scale defects and larger clusters. Analysis of x-ray diffraction data in terms of fractional area of clusters (determined by STM), reveals a cluster lattice constant similar to bulk GaN. In addition, tunneling spectroscopy on the defects indicates a conduction band state associated with an acceptor level of NAs in GaAs. Therefore, we identify the clusters and defects as nearly pure GaN and NAs, respectively. Together, the results reveal phase segregation in these arsenide/nitride structures, in agreement with the large miscibility gap predicted for GaAsN.

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

PubMed

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

NASA Astrophysics Data System (ADS)

Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

2018-05-01

The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

Hydrogenation of GaSb/GaAs quantum rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Zhuang, Q. D.

2014-08-25

We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is verymore » likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.« less

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2011-10-01 2011-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2012-10-01 2012-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2014-10-01 2014-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2013-10-01 2013-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

Optical properties of two-dimensional GaS and GaSe monolayers

NASA Astrophysics Data System (ADS)

Jappor, Hamad Rahman; Habeeb, Majeed Ali

2018-07-01

Optical properties of GaS and GaSe monolayers are investigated using first-principles calculations. The optical properties are studied up to 35 eV. Precisely, our results demonstrated that the optical properties appearance of GaS monolayer is comparative with GaSe monolayer with few informations contrasts. Moreover, the absorption begins in the visible region, although the peaks in the ultraviolet (UV) region. The refractive index values are 1.644 (GaS monolayer) and 2.01 (GaSe monolayer) at zero photon energy limit and increase to 2.092 and 2.698 respectively and both located in the visible region. Furthermore, we notice that the optical properties of both monolayers are obtained in the ultraviolet range and the results are significant. Accordingly, it can be used as a highly promising material in the solar cell, ultraviolet optical nanodevices, nanoelectronics, optoelectronic, and photocatalytic applications.

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

NASA Astrophysics Data System (ADS)

Schulze, C. S.; Huang, X.; Prohl, C.; Füllert, V.; Rybank, S.; Maddox, S. J.; March, S. D.; Bank, S. R.; Lee, M. L.; Lenz, A.

2016-04-01

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

NASA Astrophysics Data System (ADS)

Ohori, Daisuke; Fukuyama, Atsuhiko; Sakai, Kentaro; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Ikari, Tetsuo

2017-05-01

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from as-etched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillar-based optoelectronic devices such as NP laser diodes.

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

Liu, Jie; Shen, Bo; Wang, Mao-Jun; Zhou, Yu-Gang; Chen, Dun-Jun; Zhang, Rong; Shi, Yi; Zheng, You-Dou

2004-01-01

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012 cm-2eV-1, and the time constant is about 1 mus. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

NASA Astrophysics Data System (ADS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-12-01

Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

NASA Astrophysics Data System (ADS)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

NASA Technical Reports Server (NTRS)

Masselink, W. T.; Ketterson, A.; Klem, J.; Kopp, W.; Morkoc, H.

1985-01-01

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Differential sensitivity of plasma carboxylesterase-null mice to parathion, chlorpyrifos and chlorpyrifos oxon, but not to diazinon, dichlorvos, diisopropylfluorophosphate, cresyl saligenin phosphate, cyclosarin thiocholine, tabun thiocholine, and carbofuran

PubMed Central

Duysen, Ellen G.; Cashman, John R.; Schopfer, Lawrence M.; Nachon, Florian; Masson, Patrick; Lockridge, Oksana

2012-01-01

Mouse blood contains four esterases that detoxify organophosphorus compounds: carboxylesterase, butyrylcholinesterase, acetylcholinesterase, and paraoxonase-1. In contrast human blood contains the latter three enzymes but not carboxylesterase. Organophosphorus compound toxicity is due to inhibition of acetylcholinesterase. Symptoms of intoxication appear after approximately 50% of the acetylcholinesterase is inhibited. However, complete inhibition of carboxylesterase and butyrylcholinesterase has no known effect on an animal’s well being. Paraoxonase hydrolyzes organophosphorus compounds and is not inhibited by them. Our goal was to determine the effect of plasma carboxylesterase deficiency on response to sublethal doses of 10 organophosphorus toxicants and one carbamate pesticide. Homozygous plasma carboxylesterase deficient ES1−/− mice and wild-type littermates were observed for toxic signs and changes in body temperature after treatment with a single sublethal dose of toxicant. Inhibition of plasma acetylcholinesterase, butyrylcholinesterase, and plasma carboxylesterase was measured. It was found that wild-type mice were protected from the toxicity of 12.5 mg/kg parathion applied subcutaneously. However, both genotypes responded similarly to paraoxon, cresyl saligenin phosphate, diisopropylfluorophosphate, diazinon, dichlorvos, cyclosarin thiocholine, tabun thiocholine, and carbofuran. An unexpected result was the finding that transdermal application of chlorpyrifos at 100 mg/kg and chlorpyrifos oxon at 14 mg/kg was lethal to wild-type but not to ES1−/− mice, showing that with this organochlorine, the presence of carboxylesterase was harmful rather than protective. It was concluded that carboxylesterase in mouse plasma protects from high toxicity agents, but the amount of carboxylesterase in plasma is too low to protect from low toxicity compounds that require high doses to inhibit acetylcholinesterase. PMID:22209767

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, C. S.; Prohl, C.; Füllert, V.

2016-04-04

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration ofmore » III-V optoelectronic components into silicon-based technology.« less

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Growth and characterization of GaAs/Al/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, P.; Oh, J.E.; Singh, J.

Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been investigated. In these heterostructures the GaAs on top of the buried metal layer is grown by migration-enhanced epitaxy (MEE) at low temperatures (200 and 400 {degree}C) to provide a kinetic barrier to the outdiffusion of Al during superlayer growth. The crystallinity and orientation of the Al film itself deposited on (100) GaAs at {approx}0 {degree}C was studied by transmission electron diffraction, dark-field imaging, and x-ray diffraction measurements. It is found that the Al growth is polycrystalline with a grain size {approx}60 A and the preferred growth orientation ismore » (111), which may be textured in plane but oriented out of plane. The quality of the GaAs superlayer grown on top of Al by MEE is very sensitive to the growth temperature. The layer grown at 400 {degree}C has good structural and optical quality, but is accompanied by considerable outdiffusion of Al at the Al-GaAs heterointerface. At 200 {degree}C, where the interface has good structural integrity, the superlayer exhibits twinning and no luminescence is observed.« less

Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE

NASA Astrophysics Data System (ADS)

Pitts, O. J.; Watkins, S. P.; Wang, C. X.; Stotz, J. A. H.; Meyer, T. A.; Thewalt, M. L. W.

2004-09-01

Heterostructures containing monolayer (ML) and submonolayer GaSb insertions in GaAs were grown using organometallic vapour phase epitaxy. At the GaAs-on-GaSb interface, strong intermixing occurs due to the surface segregation of Sb. To form structures with relatively abrupt interfaces, a flashoff growth sequence, in which growth interruptions are employed to desorb Sb from the surface, was introduced. Reflectance-difference spectroscopy and high-resolution X-ray diffraction data demonstrate that interfacial grading is strongly reduced by this procedure. For layer structures grown with the flashoff sequence, a GaSb coverage up to 1 ML can be obtained in the two-dimensional (2D) growth mode. For uncapped GaSb layers, on the other hand, atomic force microscope images show that the 2D-3D growth mode transition occurs at a submonolayer coverage between 0.3 and 0.5 ML. Low-temperature photoluminescence spectra of multiple quantum well samples grown using the flashoff sequence show a strong quantum well-related peak which shifts to lower energies as the amount of Sb incorporated increases. The PL peak energies are consistent with a type-II band lineup at the GaAs/GaSb interface.

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

NASA Astrophysics Data System (ADS)

Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Chen, P.; Fonstad, C. G.

2005-12-01

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

PubMed

Zhou, Xiaorun; Lu, Taiping; Zhu, Yadan; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

2017-12-01

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H 2 ) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H 2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H 2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H 2 proportion further increases, stress relaxation and H 2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

NASA Astrophysics Data System (ADS)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw

2015-02-09

The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which canmore » be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.« less

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Gheshlaghi, N.; Sözen, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-04-01

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

NASA Astrophysics Data System (ADS)

Shoji, Yasushi; Tamaki, Ryo; Okada, Yoshitaka

2017-06-01

We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment. For both SCs, the external quantum efficiency (EQE) increased in the longer wavelength region beyond GaAs bandedge wavelength of λ > 870 nm due to an additive contribution from GaSb/GaAs QD or QR layers inserted in the intrinsic region of p-i-n SC structure. The EQE of GaSb/GaAs QRSC was higher than that of QDSC at room temperature and the photoluminescence intensity from GaSb/GaAs QRs was stronger compared with GaSb/GaAs QDs. These results indicate that crystal quality of GaSb/GaAs QRs is superior to that of GaSb/GaAs QDs. Furthermore, a photocurrent production due to two-step photo-absorption via GaSb/GaAs QD states or QR states, ΔEQE was measured at low temperature and the ratio of two-step absorption to total carrier extraction defined as ΔEQE / (ΔEQE + EQE), was higher for GaSb/GaAs QRSC than that of QDSC. The ratio of GaSb/GaAs QRSC exceeds 80% over the wavelength region of λ = 950 - 1250 nm. This suggests that two-step absorption process is more dominant for carrier extraction from GaSb/GaAs QR structure.

Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs

NASA Astrophysics Data System (ADS)

Tan, T. Y.; You, H.-M.; Gösele, U. M.

1993-03-01

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, V {Ga/3-}, has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V {Ga/3-}concentration, C_{V_{_{Ga} }^{3 - } }^{eq} (n), has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the C_{V_{_{Ga} }^{3 - } }^{eq} (n) value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This C_{V_{_{Ga} }^{3 - } }^{eq} (n) property provides explanations to a number of outstanding experimental results, either requiring the interpretation that V {Ga/3-}has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena.

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 1 2010-10-01 2010-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...′ N. longitude 81°02.3′ W. (St. Catherines Sound Buoy “St. C.”); thence to latitude 31°31.2′ N...

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

NASA Astrophysics Data System (ADS)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

A convenient route to [68Ga]Ga-MAA for use as a particulate PET perfusion tracer.

PubMed

Mathias, Carla J; Green, Mark A

2008-12-01

A convenient method is described for compounding [(68)Ga]Ga-MAA (MAA=macroaggregated human serum albumin) with the eluate of a commercially available TiO(2)-based (68)Ge/(68)Ga generator. The final [(68)Ga]Ga-MAA product was obtained with an 81.6+/-5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8+/-0.1% (n=5). Microscopic examination showed the [(68)Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [(68)Ga]Ga-MAA suspension, could be completed in 25 min. Only 4.4+/-0.9% of the total (68)Ge breakthrough remaining associated with the final [(68)Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [(68)Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use.

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

NASA Astrophysics Data System (ADS)

Leach, J. H.; Wu, M.; Morkoç, H.; Liberis, J.; Šermukšnis, E.; Ramonas, M.; Matulionis, A.

2011-11-01

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total charge in the channel (the electron sheet density) but rather the electron density profile. This is demonstrated by comparing two structures with equal sheet densities (1 × 1013 cm-2), but with different density profiles. The camelback channel profile exhibits a shorter hot-phonon lifetime of ˜270 fs as compared with ˜500 fs reported for a standard Al0.33Ga0.67N/AlN/GaN channel at low supplied power levels. When supplied power is sufficient to heat the electrons > 600 K, ultrafast decay of hot phonons is observed in the case of the composite channel structure. In this case, the electron density profile spreads to form a camelback profile, and hot-phonon lifetime reduces to ˜50 fs.

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Koichi, E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Yokoyama, Masafumi; Kim, Sanghyeon

2014-01-21

We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the processmore » temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.« less

Electrical contact of wurtzite GaN mircrodisks on p-type GaN template

NASA Astrophysics Data System (ADS)

Tsai, Cheng-Da; Lo, Ikai; Wang, Ying-Chieh; Hsu, Yu-Chi; Shih, Cheng-Hung; Pang, Wen-Yuan; You, Shuo-Ting; Hu, Chia-Hsuan; Chou, Mitch M. C.; Yang, Chen-Chi; Lin, Yu-Chiao

2015-03-01

We developed a back processing to fabricate a secure electrical contact of wurtzite GaN microdisk on a transparent p-type GaN template with the orientation, [10-10]disk // [10-10]template. GaN microdisks were grown on LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. In the further study, we analyzed the TEM specimen of a sample with annealed GaN microdisk/p-typed GaN template by selection area diffraction (SAD) to confirm the alignment of the microdisks with the template at the interface. From the I-V measurements performed on the samples, we obtained a threshold voltage of ~ 5.9 V for the current passing through the GaN microdisks with a resistance of ~ 45 K Ω. The electrical contact can be applied to the nanometer-scaled GaN light-emitting diode.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

NASA Astrophysics Data System (ADS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-11-01

A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

A Convenient Route to [68Ga]Ga-MAA for Use as a Particulate PET Perfusion Tracer

PubMed Central

Mathias, Carla J.; Green, Mark A.

2008-01-01

A convenient method is described for compounding [68Ga]Ga-MAA (MAA = macroaggregated human serum albumin) with the eluate of a commercially available TiO2-based 68Ge/68Ga generator. The final [68Ga]Ga-MAA product was obtained with an 81.6 ± 5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8 ± 0.1% (n = 5). Microscopic examination showed the [68Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [68Ga]Ga-MAA suspension, could be completed in 25 minutes. Only 4.4 ± 0.9% of the total 68Ge breakthrough remaining associated with the final [68Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [68Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use. PMID:18640845

Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

DOE PAGES

Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; ...

2009-01-01

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

Propriétés électriques d'hétérostructures a-GaAs/c-GaAs(n) et de structures de type MIS a-GaAsN/c-GaAs(n)

NASA Astrophysics Data System (ADS)

Aguir, K.; Fennouh, A.; Carchano, H.; Lollman, D.

1995-10-01

Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN on c-GaAs. I(V) and C(V) measurements were performed to determine electrical properties of these structures. The a-GaAs/c-GaAs(n) heterojunctions present a p-n junction like behaviour. The characteristics of the a-GaAsN/c-GaAs(n) heterojunctions present a MIS like structure behaviour with some imperfections. A fixed positive charge was detected and a density of interface states of about 10^{11} eV^{-1}cm^{-2} was evaluated. L'étude porte sur des couches minces de GaAs et de GaAsN amorphes déposées par pulvérisation cathodique RF réactive sur des substrats de GaAs cristallin. Les caractéristiques électriques I(V) et C(V) ont été mesurées. Les hétérojonctions a-GaAs/c-GaAs(n) présentent un effet redresseur. Cet effet laisse place à une caractéristique symétrique avec une forte atténuation de l'intensité du courant pour les structures a-GaAsN/cGaAs(n). Les structures réalisées ont alors un comportement semblable à celui d'une structure MIS imparfaite. L'existence d'une charge positive fixe dans le a-GaAsN a été mise en évidence. La densité des états d'interface au milieu de la bande interdite est évaluée à quelques 10^{11} cm^{-2}eV^{-1}.

Exploring the radiosynthesis and in vitro characteristics of [68 Ga]Ga-DOTA-Siglec-9.

PubMed

Jensen, Svend B; Käkelä, Meeri; Jødal, Lars; Moisio, Olli; Alstrup, Aage K O; Jalkanen, Sirpa; Roivainen, Anne

2017-07-01

Vascular adhesion protein 1 is a leukocyte homing-associated glycoprotein, which upon inflammation rapidly translocates from intracellular sources to the endothelial cell surface. It has been discovered that the cyclic peptide residues 283-297 of sialic acid-binding IgG-like lectin 9 (Siglec-9) "CARLSLSWRGLTLCPSK" bind to vascular adhesion protein 1 and hence makes the radioactive analogues of this compound ([ 68 Ga]Ga-DOTA-Siglec-9) interesting as a noninvasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 are presented and compared with previously published methods. A simple, robust radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 with a yield of 62% (non decay-corrected) was identified, and it had a radiochemical purity >98% and a specific radioactivity of 35 MBq/nmol. Furthermore, the protein binding and stability of [ 68 Ga]Ga-DOTA-Siglec-9 were analyzed in vitro in mouse, rat, rabbit, pig, and human plasma and compared with in vivo pig results. The plasma in vitro protein binding of [ 68 Ga]Ga-DOTA-Siglec-9 was the lowest in the pig followed by rabbit, human, rat, and mouse. It was considerably higher in the in vivo pig experiments. The in vivo stability in pigs was lower than the in vitro stability. Despite considerable species differences, the observed characteristics of [ 68 Ga]Ga-DOTA-Siglec-9 are suitable as a positron emission tomography tracer. Copyright © 2017 John Wiley & Sons, Ltd.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

NASA Astrophysics Data System (ADS)

Gilet, Ph.; Pougeoise, E.; Grenouillet, L.; Grosse, Ph.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gérard, J. M.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.

2007-02-01

In this article, we report our results on 1.3μm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Preliminary PET/CT Imaging with Somatostatin Analogs [68Ga]DOTAGA-TATE and [68Ga]DOTAGA-TOC.

PubMed

Satpati, Drishty; Shinto, Ajit; Kamaleshwaran, K K; Sarma, Haladhar Dev; Dash, Ashutosh

2017-12-01

Somatostatin receptor positron emission tomography/X-ray computed tomography (SSTR-PET/CT) is a well-established technique for staging and detection of neuroendocrine tumors (NETs). Ga-68-labeled DOTA-conjugated octreotide analogs are the privileged radiotracers for diagnosis and therapeutic monitoring of NETs. Hence, we were interested in assessing the influence of promising, newer variant DOTAGA on the hydrophilicity, pharmacokinetics, and lesion pick-up of somatostatin analogs. Herein, the potential of ([ 68 Ga]DOTAGA, Tyr 3 , Thr 8 ) octreotide ([ 68 Ga]DOTAGA-TATE) and ([ 68 Ga]DOTAGA, Tyr 3 ) octreotide ([ 68 Ga]DOTAGA-TOC) as NET imaging agents has been investigated. Amenability of [ 68 Ga]DOTAGA-(TATE/TOC) to kit-type formulation has been demonstrated. Biodistribution studies were carried out in normal rats at 1 h post-injection (p.i.). [ 68 Ga]DOTAGA-(TATE/TOC) PET/CT scans were carried out in patients (70-170 MBq, 1 h p.i.) with histologically confirmed well-differentiated NETs. [ 68 Ga]DOTAGA-TATE exhibited hydrophilicity similar to [ 68 Ga]DOTA-TATE (log P = -3.51 vs -3.69) whereas [ 68 Ga]DOTAGA-TOC was more hydrophilic than [ 68 Ga]DOTA-TOC (log P = -3.27 vs -2.93). [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTA-TATE showed almost identical blood and kidney uptake in normal rats whereas significantly fast clearance (p < 0.05) of [ 68 Ga]DOTAGA-TATE was observed from other non-specific organs (liver, lungs, spleen, intestine). [ 68 Ga]DOTAGA-TOC also demonstrated rapid clearance from blood and kidneys (p < 0.05) in comparison to [ 68 Ga]DOTA-TOC. The metastatic lesions in NET patients were well identified by [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTAGA-TOC. The phenomenal analogy was observed between [ 68 Ga]DOTAGA-TATE and [ 68 Ga]DOTA-TATE as well as between [ 68 Ga]DOTAGA-TOC and [ 68 Ga]DOTA-TOC in biodistribution studies in rats. The good lesion detection ability of the two radiotracers indicates their potential as NET imaging radiotracers.

Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures

NASA Astrophysics Data System (ADS)

Wang, Xue; Li, Shunfeng; Mohajerani, Matin Sadat; Ledig, Johannes; Wehmann, Hergo-Heinrich; Mandl, Martin; Strassburg, Martin; Steegmüller, Ulrich; Jahn, Uwe; Lähnemann, Jonas; Riechert, Henning; Griffiths, Ian; Cherns, David; Waag, Andreas

2013-06-01

Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned SiOx/GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous growth mode. The key parameters and the physical principles of growth of Ga-polar GaN three-dimensional columns are identified, and their potential for manipulating the growth process is discussed. High aspect ratio columns have been achieved using silane during the growth, leading to n-type columns. The vertical growth rate increases with increasing silane flow. In a core-shell columnar LED structure, the shells of InGaN/GaN multi quantum wells and p-GaN have been realized on a core of n-doped GaN column. Cathodoluminescence gives insight into the inner structure of these core-shell LED structures.

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

PubMed

Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

2015-12-01

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Moudakir, T.; Abid, M.; Doan, B.-T.; Demarly, E.; Gautier, S.; Orsal, G.; Jacquet, J.; Ougazzaden, A.; Genty, F.

2010-10-01

Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2015-02-07

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, andmore » therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.« less

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

PubMed Central

Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; Koyama, Tadanobu; Momose, Yoshimi; Sakata, Kaoruho; Ozawa, Tetsuo; Okano, Yasunori; Inatomi, Yuko; Hayakawa, Yasuhiro

2016-01-01

InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B. PMID:28725736

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station.

PubMed

Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; Koyama, Tadanobu; Momose, Yoshimi; Sakata, Kaoruho; Ozawa, Tetsuo; Okano, Yasunori; Inatomi, Yuko; Hayakawa, Yasuhiro

2016-01-01

InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.

Site-controlled InGaN/GaN single-photon-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roul, Basanta; Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560013

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

A Theoretical Study of Self Assembled InAs/GaAs and InAs/GaP/GaAs Quantum Dots: Effects of Strain Balancing

NASA Astrophysics Data System (ADS)

Lin, Yih-Yin; Singh, Jasprit

2002-03-01

The past few years have been considerable efforts in growth and device application of self-assembled quantum dots. Quantum dots based on the InAs/GaAs system have been widely studied for lasers and detectors. In these structures InAs is under a large compressive strain making it difficult to have a large number stacked InAs/GaAs dots. In this paper we examine self assembled dots based on using GaAs as a substrate but using a GaAsP region to counterbalance the compressive strain in the InAs region allowing for a lower overall strain energy. We will present a comparison of the InAs/GaAs and InAs/GaAsP/GaAs self assembled dots by examining the strain energy per unit volume and the electronic spectra. The strain energy is calculated using the valence force field method and the electronic spectra is calculated using the 8 band k -- p method. The effective energy bandgap of the same size InAs dot in GaAs matrice is found 0.952 eV and is 0.928 eV in GaAs_0.8P_0.2 matrice.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Differences between male and female rhesus monkey erythrocyte acetylcholinesterase and plasma cholinesterase activity before and after exposure to sarin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodard, C.L.; Calamaio, C.A.; Kaminskis, A.

The female rhesus monkey has a menstrual cycle like the human. Additionally, several differences in enzyme levels between males and females and in the female during the menstrual cycle are present. Therefore we quantitated plasma cholinesterase (ChE/BuChE) and erythrocyte (RBC) acetylcholinesterase (AChE) activity before and after exposure to sarin (GB)(1 5 ug/kg, iv; a 0.75 LD50), in male and female rhesus (Macaca mulatta) monkeys. Twenty-eight-day preexposure baseline plasma ChE and RBC AChE values for six male and six female rhesus monkeys were compared for intra-animal, within sex and between sex differences. After these baseline values were obtained, the organophosphorus (OP)more » compound/Isopropyl methylphosphono-fluoridate (GB) was administered to atropinized monkeys to determine if there was a significant in vivo difference between the sexes in their response to this intoxication in regard to the rate of BuChE /AChE inhibition, pyridine-2-aldoxime methyl chloride (2-PAM) reactivation of the phosphonylated BuChE and the rate of aging of the phosphonylated:BuChE/AChE. In the pre-exposure portion of the protocol; the intra-animal and intra-group BuChE/AChE variations were found to be minimal; but there were significant differences between the male and female monkeys in both plasma BuChE and RBC AChE levels; although probably clinically insignificant in respect to an OP intoxication. No significant cyclic fluctuations were seen during the 28-day study in either sex.« less

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Electron and proton degradation in /AlGa/As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Loo, R.; Knechtli, R. C.; Kamath, G. S.; Goldhammer, L.; Anspaugh, B.

1978-01-01

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

Prophylaxis with human serum butyrylcholinesterase protects Göttingen minipigs exposed to a lethal high-dose of sarin vapor.

PubMed

Saxena, Ashima; Hastings, Nicholas B; Sun, Wei; Dabisch, Paul A; Hulet, Stanley W; Jakubowski, Edward M; Mioduszewski, Robert J; Doctor, Bhupendra P

2015-08-05

Serum-derived human butyrylcholinesterase (Hu BChE) is a stoichiometric bioscavenger that is being developed as a potential prophylactic nerve agent countermeasure. Previously, we reported the prophylactic efficacy of Hu BChE in Göttingen minipigs against a whole-body exposure to 4.1mg/m(3) of sarin (GB) vapor, which produced lethality over 60min. Since the toxicity of nerve agent is concentration-dependent, in the present study, we investigated the toxic effects of an almost 3-fold higher rate of GB vapor exposure and the ability of Hu BChE to protect minipigs against this exposure. Male minipigs were subjected to: (1) air exposure; (2) GB vapor exposure; or (3) pretreatment with 7.5mg/kg of Hu BChE by i.m. injection, 24h prior to whole-body exposure to 11.4mg/m(3) of GB vapor for 10min. Electrocardiogram, electroencephalogram, and pupil size were monitored throughout exposure. Blood drawn before and throughout exposure was analyzed for blood gases, electrolytes, metabolites, acetylcholinesterase and BChE activities, and amount of GB bound to red blood cells and plasma. A novel finding was that saline-treated animals exposed to GB vapor did not develop any seizures, but manifested a variety of cardiac and whole blood toxic signs and rapidly died due to respiratory failure. Strikingly, pre-treatment with 7.5mg/kg of Hu BChE not only prevented lethality, but also avoided all cardiac toxic signs manifested in the non-treated cohort. Thus, Hu BChE alone can serve as an effective prophylactic countermeasure versus a lethal high-dose exposure to GB vapor. Published by Elsevier Ireland Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Che, Magnus M.; Conti, Michele; Chanda, Soma

We evaluated the protective efficacy of nasal atropine methyl bromide (AMB) which does not cross the blood-brain barrier against sarin inhalation exposure. Age and weight matched male guinea pigs were exposed to 846.5 mg/m{sup 3} sarin using a microinstillation inhalation exposure technique for 4 min. The survival rate at this dose was 20%. Post-exposure treatment with nasal AMB (2.5 mg/kg, 1 min) completely protected against sarin induced toxicity (100% survival). Development of muscular tremors was decreased in animals treated with nasal AMB. Post-exposure treatment with nasal AMB also normalized acute decrease in blood oxygen saturation and heart rate following sarinmore » exposure. Inhibition of blood AChE and BChE activities following sarin exposure was reduced in animals treated with nasal AMB, indicating that survival increases the metabolism of sarin or expression of AChE. The body weight loss of animals exposed to sarin and treated with nasal AMB was similar to saline controls. No differences were observed in lung accessory lobe or tracheal edema following exposure to sarin and subsequent treatment with nasal AMB. Total bronchoalveolar lavage fluid (BALF) protein, a biomarker of lung injury, showed trends similar to saline controls. Surfactant levels post-exposure treatment with nasal AMB returned to normal, similar to saline controls. Alkaline phosphatase levels post-exposure treatment with nasal AMB were decreased. Taken together, these data suggest that nasal AMB blocks the copious airway secretion and peripheral cholinergic effects and protects against lethal inhalation exposure to sarin thus increasing survival.« less

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

GaAsP solar cells on GaP/Si with low threading dislocation density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan

2016-07-18

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The resultsmore » in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.« less

Degradation Mechanisms for GaN and GaAs High Speed Transistors

PubMed Central

Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

2012-01-01

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Yao; National Institute for Materials Science, Tsukuba, Ibaraki 305-0044; Sun, Huabin

2015-05-15

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, whichmore » influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.« less

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

PubMed Central

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-01-01

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

PubMed

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-08-24

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

NASA Astrophysics Data System (ADS)

Mori, Takuma; Egawa, Takashi; Miyoshi, Makoto

2017-08-01

We conducted the study on the growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well (MQW) structures by metalorganic chemical vapor deposition (MOCVD). It was found that the sum of InGaN well thickness t well_total was a predominant factor to form the rough surface, in addition to the growth temperature as low as 800 °C for the p-GaN layers. Microstructure analyses revealed that the rough surfaces consisted of a certain number of hexagonal V-shaped pits starting from dislocations propagated through an under layer and they increased with the increased t well_total. It was confirmed that the light absorption was enlarged for MQW structure samples with rough-surface p-GaN layers on the top, owing to not only the thickness effect in MQWs but also their reduced light reflection on the surfaces. It was also confirmed that these optical properties contributed to the performance improvement in InGaN/GaN MQW solar cells.

Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

NASA Astrophysics Data System (ADS)

Luna, E.; Delorme, O.; Cerutti, L.; Tournié, E.; Rodriguez, J.-B.; Trampert, A.

2018-04-01

Using transmission electron microscopy, we present an in-depth microstructural analysis of a series of Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells grown on GaSb(001) substrates by molecular beam epitaxy. Despite the dilute bismide compound Ga(Sb,Bi) is regarded as a highly-mismatched alloy, we find that the material is of remarkable structural perfection, even up to 11%-14% Bi, the maximum Bi concentration incorporated into GaSb so far. No extended defects, nanoclusters, or composition modulations are detectable in the pseudomorphic layers. In addition, the quantum wells exhibit regular and homogeneous morphologies including smooth and stable interfaces with a chemical width on the same order as in other high-quality III-V heterointerfaces. These results may give reasons for the recent successful realization of mid-infrared lasers with room temperature operation based on the very same quantum well structures.

Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

PubMed

Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

2008-10-01

Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

NASA Astrophysics Data System (ADS)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Carrier Concentration Control of GaSb/GaInAsSb System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazzari, J.-L.; Anda, F. de; Nieto, J.

2007-02-22

The residual carrier concentration of GaSb and GaSb-lattice matched Ga1-xInxAsySb1-y alloys (x = 0.12-0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p {approx} 2-3x1016 cm-3 were obtained for undoped GaSb grown by MBE at 480 deg. C, by LPE from Ga-rich melt at low temperature (400 deg. C), and by LPE from Sb-rich melts at {approx}600 deg. C. The native acceptor defect responsible of the high p-type residual doping in GaSb is reduced when the indium concentrationmore » is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n-type doping in the (0.05-30)x1017 cm-3 range. A maximum of free carrier concentration was 1.5x1018 cm-3 for LPE layers, 2x1018 cm-3 for MBE layers grown at 1.0 {mu}m/h, 3.5x1018 cm-3 for MBE layers grown at 0.2 {mu}m/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of ternary GaSb1-xTex solid solution.« less

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

DOE PAGES

Limbach, F.; Gotschke, T.; Stoica, T.; ...

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Höfling, S.; Worschech, L.; Grützmacher, D.

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

X-ray probe of GaN thin films grown on InGaN compliant substrates

NASA Astrophysics Data System (ADS)

Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua

2013-04-01

GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Neeraj; Department of Materials Science, Gulbarga University, Gulbarga 585106; Roul, Basanta, E-mail: basantaroul@gmail.com

2015-01-15

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore » InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.« less

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

Measurement of second order susceptibilities of GaN and AlGaN

NASA Astrophysics Data System (ADS)

Sanford, N. A.; Davydov, A. V.; Tsvetkov, D. V.; Dmitriev, A. V.; Keller, S.; Mishra, U. K.; DenBaars, S. P.; Park, S. S.; Han, J. Y.; Molnar, R. J.

2005-03-01

Rotational Maker fringes, scaled with respect to χ11(2) of crystalline quartz, were used to determine the second order susceptibilities χ31(2) and χ33(2) for samples of thin AlxGa1-xN films, a thicker GaN film, and a free-standing GaN platelets. The pump wavelength was 1064nm. The AlxGa1-xN samples, ranging in thickness from roughly 0.5to4.4μm, were grown by metalorganic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE) on (0001) sapphire substrates. The Al mole fractions x were 0, 0.419, 0.507, 0.618, 0.660, and 0.666, for the MOCVD-grown samples, and x =0, 0.279, 0.363, and 0.593 for the HVPE-grown samples. An additional HVPE-grown GaN sample ˜70μm thick was also examined. The free-standing bulk GaN platelets consisted of an HVPE grown film ˜226μm thick removed from its growth substrate, and a crystal ˜160μm thick grown by high-pressure techniques. For the AlxGa1-xN samples, the magnitudes of χ31(2) and χ33(2) decrease roughly linearly with increasing x and extrapolate to ˜0 for x =1. Furthermore, the constraint expected for a perfect wurtzite structure, namely χ33(2)=-2χ31(2), was seldom observed, and the samples with x =0.660 and x =0.666 showed χ31(2) and χ33(2) having the same sign. These results are consistent with the theoretical studies of nonlinear susceptibilities for AlN and GaN performed by Chen et al. [Appl. Phys. Lett. 66, 1129 (1995)]. The thicker bulk GaN samples displayed a complex superposition of high- and low-frequency Maker fringes due to the multiple-pass interference of the pump and second-harmonic generation beams, and the nonlinear coefficients were approximately consistent with those measured for the thin-film GaN sample.

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

NASA Astrophysics Data System (ADS)

Meneghesso, G.; Meneghini, M.; Rossetto, I.; Canato, E.; Bartholomeus, J.; De Santi, C.; Trivellin, N.; Zanoni, E.

2017-02-01

GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase. For this reason, studying the stability and reliability of these devices under high stress conditions is of high importance. This paper reports on our most recent results on the field- and time-dependent degradation of GaN-HEMTs with p-GaN gate submitted to stress with positive gate bias. Based on combined step-stress experiments, constant voltage stress and electroluminescence testing we demonstrated that: (i) when submitted to high/positive gate stress, the transistors may show a negative threshold voltage shift, that is ascribed to the injection of holes from the gate metal towards the p-GaN/AlGaN interface; (ii) in a step-stress experiment, the analyzed commercial devices fail at gate voltages higher than 9-10 V, due to the extremely high electric field over the p-GaN/AlGaN stack; (iii) constant voltage stress tests indicate that the failure is also time-dependent and Weibull distributed. The several processes that can explain the time-dependent failure are discussed in the following.

[The development of neurotoxic agents as chemical weapons during the National Socialist period in Germany].

PubMed

López-Muñoz, F; Alamo, C; Guerra, J A; García-García, P

The discovery and development of the so-called 'nerve agents' (neurotoxic substances to be used as weapons) took place in the Third Reich, largely thanks to the vast amount of progress being made in pharmacology in Germany at that time, both in academic and industrial terms. Furthermore, successive National Socialist governments set up a collaborative network made up of the academia, the chemical industry and military chiefs that also favoured this line of research. The first neurotoxic substance to be incorporated into the category of 'chemical warfare agent' did so almost wholly by chance. As part of the work being carried out on organophosphate-type pesticides and insecticides, Gerald Schrader, a chemist at the I.G. Farben company, synthesised tabun (ethyl N,N-dimethylphosphoramidocyanidate) and an incident involving accidental contamination of laboratory staff with this substance highlighted its potential toxicity. The same group of researchers later synthesised another substance with the same properties, sarin (isopropyl methylphosphonofluoridate). Both agents were studied for use as chemical weapons by Wolfgang Wirth. At the same time, a group led by Richard Kuhn, who won the Nobel Prize in Chemistry in 1938, synthesised pinacolyl methylphosphonofluoridate, otherwise known as soman. Pharmacological studies confirmed that the neurotoxic mechanism of action of these substances was the irreversible inhibition of the enzyme acetylcholinesterase, which is responsible for metabolising acetylcholine. Results also showed that an excess of this neurotransmitter led to a continuous over-stimulation of the cholinergic (nicotinic and muscarinic) receptors, which is what triggers the appearance of the wide range of symptoms of poisoning and their swift fatal effect.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

NASA Astrophysics Data System (ADS)

Nechaev, D. V.; Semenov, A. N.; Koshelev, O. A.; Jmerik, V. N.; Davydov, V. Yu; Smirnov, A. N.; Pozina, G.; Shubina, T. V.; Ivanov, S. V.

2017-11-01

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (μ-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Microcathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.

Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

NASA Astrophysics Data System (ADS)

Saarinen, K.; Suski, T.; Grzegory, I.; Look, D. C.

2001-12-01

We have applied positron annihilation spectroscopy to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1 cm-1. The Ga vacancies recover in long-range migration processes at 500-600 K with an estimated migration energy of 1.5 (2) eV. Since the native Ga vacancies in as-grown GaN survive up to much higher temperatures (1300-1500 K), we conclude that they are stabilized by forming complexes with oxygen impurities. The estimated binding energy of 2.2 (4) eV of such complexes is in good agreement with the results of theoretical calculations.

Ab initio phonon thermal transport in monolayer InSe, GaSe, GaS, and alloys

NASA Astrophysics Data System (ADS)

Pandey, Tribhuwan; Parker, David S.; Lindsay, Lucas

2017-11-01

We compare vibrational properties and phonon thermal conductivities (κ) of monolayer InSe, GaSe, and GaS systems using density functional theory and Peierls-Boltzmann transport methods. In going from InSe to GaSe to GaS, system mass decreases giving both increasing acoustic phonon velocities and decreasing scattering of these heat-carrying modes with optic phonons, ultimately giving {κ }{InSe}< {κ }{GaSe}< {κ }{GaS}. This behavior is demonstrated by correlating the scattering phase space limited by fundamental conservation conditions with mode scattering rates and phonon dispersions for each material. We also show that, unlike flat monolayer systems such as graphene, in InSe, GaSe and GaS thermal transport is governed by in-plane vibrations. Alloying of InSe, GaSe, and GaS systems provides an effective method for modulating their κ through intrinsic vibrational modifications and phonon scattering from mass disorder giving reductions ˜2-3.5 times. This disorder also suppresses phonon mean free paths in the alloy systems compared to those in their crystalline counterparts. This work provides fundamental insights of lattice thermal transport from basic vibrational properties for an interesting set of two-dimensional materials.

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Desrat, W.; Moret, M.; Briot, O.; Ngo, T.-H.; Piot, B. A.; Jabakhanji, B.; Gil, B.

2018-04-01

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

PubMed Central

Wu, Qing; Liu, Yu; Wang, Hailong; Li, Yuan; Huang, Wei; Zhao, Jianhua; Chen, Yonghai

2017-01-01

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization. PMID:28084437

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

33 CFR 80.717 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Tybee Island, GA to St. Simons..., GA to St. Simons Island, GA. (a) A line drawn from the southernmost extremity of Savannah Beach on....4′ W.) drawn from the southernmost extremity of Ossabaw Island to St. Catherines Island. (e) A north...

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

Interfacial recombination at /AlGa/As/GaAs heterojunction structures

NASA Technical Reports Server (NTRS)

Ettenberg, M.; Kressel, H.

1976-01-01

Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Theoretical study of electronic structures and spectroscopic properties of Ga3Sn, GaSn3, and their ions.

PubMed

Zhu, Xiaolei

2007-01-01

Ground and excited states of mixed gallium stannide tetramers (Ga3Sn, Ga3Sn+, Ga3Sn-, GaSn3, GaSn3+, and GaSn3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga3Sn, Ga3Sn+, and Ga3Sn- are found to be the 2A1, 3B1, and 1A1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn3 and GaSn3- is predicted to be the 2A1 and 1A1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn3+ is the 1A1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga3Sn and GaSn3 are computed and discussed. The anion photoelectron spectra of Ga3Sn- and GaSn3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn2 atoms in the 1A1 state of GaSn3+ greatly increases upon electron ionization from the 2A1 state of GaSn3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga3Sn and GaSn3 are compared with those of Ga3Si and GaSi3.

Theoretical study of electronic structures and spectroscopic properties of Ga 3Sn, GaSn 3, and their ions

NASA Astrophysics Data System (ADS)

Zhu, Xiaolei

2007-01-01

Ground and excited states of mixed gallium stannide tetramers (Ga 3Sn, Ga 3Sn +, Ga 3Sn -, GaSn 3, GaSn 3+, and GaSn 3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga 3Sn, Ga 3Sn +, and Ga 3Sn - are found to be the 2A 1, 3B 1, and 1A 1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn 3 and GaSn 3- is predicted to be the 2A 1 and 1A 1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn 3+ is the 1A 1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga 3Sn and GaSn 3 are computed and discussed. The anion photoelectron spectra of Ga 3Sn - and GaSn 3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn 2 atoms in the 1A 1 state of GaSn 3+ greatly increases upon electron ionization from the 2A 1 state of GaSn 3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga 3Sn and GaSn 3 are compared with those of Ga 3Si and GaSi 3.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Kunrugsa, Maetee

2018-06-01

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

Emission wavelength red-shift by using ;semi-bulk; InGaN buffer layer in InGaN/InGaN multiple-quantum-well

NASA Astrophysics Data System (ADS)

Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2017-12-01

We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is fully strained on the n-GaN template, the MQW structure with the buffer has ∼15% relaxation. This small relaxation along with slight compositional pulling induced well thickness increase of MQW is believed to be the reason for the red-shift of emission wavelength. In addition, the SB InGaN buffer acts as an electron reservoir and also helps to reduce the Quantum Confined Stark Effect (QCSE) and thus increase the emission intensity. In this way, by avoiding fully relaxed buffer induced material degradation, a longer emission wavelength can be achieved by just using InGaN SB buffer while keeping all other growth conditions the same as the reference structure. Thus, a reasonably thick fully strained or very little relaxed InGaN buffer, which is realized by ;semi-bulk; approach to maintain good InGaN material quality, can be beneficial for realizing LEDs, grown on top of this buffer, emitting in the blue to cyan to green regime without using excess indium (In).

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1976-01-01

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Effects of low-level sarin and cyclosarin exposure on white matter integrity in Gulf War Veterans.

PubMed

Chao, Linda L; Zhang, Yu; Buckley, Shannon

2015-05-01

We previously found evidence of reduced gray and white matter volume in Gulf War (GW) veterans with predicted low-level exposure to sarin (GB) and cyclosarin (GF). Because loss of white matter tissue integrity has been linked to both gray and white matter atrophy, the current study sought to test the hypothesis that GW veterans with predicted GB/GF exposure have evidence of disrupted white matter microstructural integrity. Measures of fractional anisotropy and directional (i.e., axial and radial) diffusivity were assessed from the 4T diffusion tensor images (DTI) of 59 GW veterans with predicted GB/GF exposure and 59 "matched" unexposed GW veterans (mean age: 48 ± 7 years). The DTI data were analyzed using regions of interest (ROI) analyses that accounted for age, sex, total brain gray and white matter volume, trauma exposure, posttraumatic stress disorder, current major depression, and chronic multisymptom illness status. There were no significant group differences in fractional anisotropy or radial diffusivity. However, there was increased axial diffusivity in GW veterans with predicted GB/GF exposure compared to matched, unexposed veterans throughout the brain, including the temporal stem, corona radiata, superior and inferior (hippocampal) cingulum, inferior and superior fronto-occipital fasciculus, internal and external capsule, and superficial cortical white matter blades. Post hoc analysis revealed significant correlations between higher fractional anisotropy and lower radial diffusivity with better neurobehavioral performance in unexposed GW veterans. In contrast, only increased axial diffusivity in posterior limb of the internal capsule was associated with better psychomotor function in GW veterans with predicted GB/GF exposure. The finding that increased axial diffusivity in a region of the brain that contains descending corticospinal fibers was associated with better psychomotor function and the lack of significant neurobehavioral deficits in veterans

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

NASA Astrophysics Data System (ADS)

Deng, Zhuo; Chen, Baile; Chen, Xiren; Shao, Jun; Gong, Qian; Liu, Huiyun; Wu, Jiang

2018-05-01

In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to ∼7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates.

Ab initio phonon thermal transport in monolayer InSe, GaSe, GaS, and alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandey, Tribhuwan; Parker, David S.; Lindsay, Lucas

We compare vibrational properties and phonon thermal conductivities (κ) of monolayer InSe, GaSe and GaS systems using density functional theory and Peierls-Boltzmann transport methods. In going from InSe to GaSe to GaS, system mass decreases giving both increasing acoustic phonon velocities and decreasing scattering of these heat-carrying modes with optic phonons, ultimately giving κInSe< κGaSe< κGaS. This behavior is demonstrated by correlating the scattering phase space limited by fundamental conservation conditions with mode scattering rates and phonon dispersions for each material. We also show that, unlike flat monolayer systems such as graphene, thermal transport is governed by in-plane vibrations inmore » InSe, GaSe and GaS, similar to buckled monolayer materials such as silicene. Alloying of InSe, GaSe and GaS systems provides an effective method for modulating their κ through intrinsic vibrational modifications and phonon scattering from mass disorder giving reductions ~2-3.5 times. This disorder also suppresses phonon mean free paths in the alloy systems compared to those in their crystalline counterparts. This work provides fundamental insights of lattice thermal transport from basic vibrational properties for an interesting set of two-dimensional materials.« less

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

2017-12-01

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE PAGES

Perl, E. E.; Kuciauskas, D.; Simon, J.; ...

2017-12-21

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, E. E.; Kuciauskas, D.; Simon, J.

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-typemore » GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.« less

Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

NASA Astrophysics Data System (ADS)

Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

1992-12-01

Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

NASA Astrophysics Data System (ADS)

Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

2016-09-01

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Das, Saikat; Izyumskaya, Natalia; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

PubMed

Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

2018-01-23

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Kondratenko, S. V.; Iliash, S. A.; Mazur, Yu I.; Kunets, V. P.; Benamara, M.; Salamo, G. J.

2017-09-01

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Z. L., E-mail: zhilaifang@hotmail.com; Li, Q. F.; Shen, X. Y.

2014-01-28

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhancedmore » interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.« less

Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties.

PubMed

Li, Jianye; An, Lei; Lu, Chenguang; Liu, Jie

2006-02-01

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates

NASA Astrophysics Data System (ADS)

Li, Ding; Hoffmann, Veit; Richter, Eberhard; Tessaro, Thomas; Galazka, Zbigniew; Weyers, Markus; Tränkle, Günther

2017-11-01

We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

PubMed

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Scanning tunneling microscopy studies of Si donors (Si[sub Ga]) in GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, J.F.; Liu, X.; Newman, N.

1994-03-07

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si[sub Ga]) in GaAs that reveal delocalized and localized electronic features corresponding to Si[sub Ga] in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface Si[sub Ga]. In contrast, STM images of surface Si[sub Ga] show very localized electronic structures, in good agreement with a recent theoretical prediction [J. Wang [italmore » et] [ital al]., Phys. Rev. B 47, 10 329 (1993)].« less

Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Yang, Zhou; Albrecht, Alexander R.; Sheik-Bahae, Mansoor

2017-02-01

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provence, S. R., E-mail: sydney-provence@uiowa.edu; Ricker, R.; Aytac, Y.

2015-09-28

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1982-01-01

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Joongoo; Chang, K. J.; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea and Korea Institute for Advanced Study, Seoul 130-722

2007-10-15

We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V{sub Ga}) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V{sub Ga}, and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V{sub Ga}. The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V{sub Ga} complex, whichmore » consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V{sub Ga} lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length.« less

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

Lifetime broadening in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kucharska, A.I.; Robbins, D.J.

1990-03-01

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers show that spectral broadening should be included in any realistic model of laser performance. The authors describe a model of the lifetime broadening due to intraband Auger processes of the Landsberg type and develop it for the case of electron-electron scattering in a 2-D system. They apply the model to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and compare their results with those obtained using both a fixed intraband scattering time and one that varies as {ital n}{sup 1/2},more » where {ital n} is the volume injected carrier density.« less

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrova, Olga; Balakrishnan, Ganesh

2017-02-24

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured upmore » to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).« less

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

NASA Astrophysics Data System (ADS)

Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

2015-01-01

We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm-3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

Ga/1-x/Al/x/As LED structures grown on GaP substrates.

NASA Technical Reports Server (NTRS)

Woodall, J. M.; Potemski, R. M.; Blum, S. E.; Lynch, R.

1972-01-01

Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

Diffraction studies of the high pressure phases of GaAs and GaP

NASA Technical Reports Server (NTRS)

Baublitz, M., Jr.; Ruoff, A. L.

1982-01-01

High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive X-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172 + or - 7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal beta-Sn type phase at 215 + or - 8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.

Stack Characterization in CryoSat Level1b SAR/SARin Baseline C

NASA Astrophysics Data System (ADS)

Scagliola, Michele; Fornari, Marco; Di Giacinto, Andrea; Bouffard, Jerome; Féménias, Pierre; Parrinello, Tommaso

2015-04-01

CryoSat was launched on the 8th April 2010 and is the first European ice mission dedicated to the monitoring of precise changes in the thickness of polar ice sheets and floating sea ice. CryoSat is the first altimetry mission operating in SAR mode and it carries an innovative radar altimeter called the Synthetic Aperture Interferometric Altimeter (SIRAL), that transmits pulses at a high pulse repetition frequency thus making the received echoes phase coherent and suitable for azimuth processing. The current CryoSat IPF (Instrument Processing Facility), Baseline B, was released in operation in February 2012. After more than 2 years of development, the release in operations of the Baseline C is expected in the first half of 2015. It is worth recalling here that the CryoSat SAR/SARin IPF1 generates 20Hz waveforms in correspondence of an approximately equally spaced set of ground locations on the Earth surface, i.e. surface samples, and that a surface sample gathers a collection of single-look echoes coming from the processed bursts during the time of visibility. Thus, for a given surface sample, the stack can be defined as the collection of all the single-look echoes pointing to the current surface sample, after applying all the necessary range corrections. The L1B product contains the power average of all the single-look echoes in the stack: the multi-looked L1B waveform. This reduces the data volume, while removing some information contained in the single looks, useful for characterizing the surface and modelling the L1B waveform. To recover such information, a set of parameters has been added to the L1B product: the stack characterization or beam behaviour parameters. The stack characterization, already included in previous Baselines, has been reviewed and expanded in Baseline C. This poster describes all the stack characterization parameters, detailing what they represent and how they have been computed. In details, such parameters can be summarized in: - Stack

Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films.

PubMed

Huang, Shanjin; Zhang, Yu; Leung, Benjamin; Yuan, Ge; Wang, Gang; Jiang, Hao; Fan, Yingmin; Sun, Qian; Wang, Jianfeng; Xu, Ke; Han, Jung

2013-11-13

Nanoporous (NP) gallium nitride (GaN) as a new class of GaN material has many interesting properties that the conventional GaN material does not have. In this paper, we focus on the mechanical properties of NP GaN, and the detailed physical mechanism of porous GaN in the application of liftoff. A decrease in elastic modulus and hardness was identified in NP GaN compared to the conventional GaN film. The promising application of NP GaN as release layers in the mechanical liftoff of GaN thin films and devices was systematically studied. A phase diagram was generated to correlate the initial NP GaN profiles with the as-overgrown morphologies of the NP structures. The fracture toughness of the NP GaN release layer was studied in terms of the voided-space-ratio. It is shown that the transformed morphologies and fracture toughness of the NP GaN layer after overgrowth strongly depends on the initial porosity of NP GaN templates. The mechanical separation and transfer of a GaN film over a 2 in. wafer was demonstrated, which proves that this technique is useful in practical applications.

Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

NASA Astrophysics Data System (ADS)

Sugimoto, Kohei; Okada, Narihito; Kurai, Satoshi; Yamada, Yoichi; Tadatomo, Kazuyuki

2018-06-01

We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. It was observed that the V-pits formed account for 30% of the improvement in the LED performance while the remaining 70% can be attributed to the structural or compositional effect of the SL.

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

PubMed

Duan, Tian Li; Pan, Ji Sheng; Wang, Ning; Cheng, Kai; Yu, Hong Yu

2017-08-17

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al 2 O 3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al 2 O 3 due to the occurrence of Ga-N bond break and Ga-O bond forming during Al 2 O 3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N 2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges.

Photoelectrochemical studies of InGaN/GaN MQW photoanodes

NASA Astrophysics Data System (ADS)

Butson, Joshua; Reddy Narangari, Parvathala; Krishna Karuturi, Siva; Yew, Rowena; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

2018-01-01

The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.

AlGaAs-GaAs cascade solar cell

NASA Technical Reports Server (NTRS)

Lamorte, M. F.; Abbott, D. H.

1980-01-01

Computer modeling studies are reported for a monolithic, two junction, cascade solar cell using the AlGaAs GaAs materials combination. An optimum design was obtained through a serial optimization procedure by which conversion efficiency is maximized for operation at 300 K, AM 0, and unity solar concentration. Under these conditions the upper limit on efficiency was shown to be in excess of 29 percent, provided surface recombination velocity did not exceed 10,000 cm/sec.

Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga,In)As with in-plane anisotropy

NASA Astrophysics Data System (ADS)

Herrera Diez, L.; Rapp, C.; Schoch, W.; Limmer, W.; Gourdon, C.; Jeudy, V.; Honolka, J.; Kern, K.

2012-04-01

Appropriate adjustment of the tensile strain in (Ga, Mn)As/(Ga,In)As films allows for the coexistence of in-plane magnetic anisotropy, typical of compressively strained (Ga, Mn)As/GaAs films, and the so-called cross-hatch dislocation pattern seeded at the (Ga,In)As/GaAs interface. Kerr microscopy reveals a close correlation between the in-plane magnetic domain and dislocation patterns, absent in compressively strained materials. Moreover, the magnetic domain pattern presents a strong asymmetry in the size and number of domains for applied fields along the easy [11¯0] and hard [110] directions which is attributed to different domain wall nucleation/propagation energies. This strong influence of the dislocation lines in the domain wall propagation/nucleation provides a lithography-free route to the effective trapping of domain walls in magneto-transport devices based on (Ga, Mn)As with in-plane anisotropy.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

PubMed Central

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-01-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

NASA Astrophysics Data System (ADS)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

PubMed

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-14

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN) 5 /(GaN) 1 superlattice (SL) in Al 0.83 Ga 0.17 N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg Ga δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg Ga δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Native point defects in GaSb

NASA Astrophysics Data System (ADS)

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J.

2014-10-01

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Adsorption and diffusion of Ga and N adatoms on GaN surfaces: Comparing the effects of Ga coverage and electronic excitation

NASA Astrophysics Data System (ADS)

Takeuchi, Noboru; Selloni, Annabella; Myers, T. H.; Doolittle, A.

2005-09-01

We present density-functional-theory calculations of the binding and diffusion of Ga and N adatoms on GaN (0001) and (000-1) surfaces under different conditions, including stoichiometric and Ga-rich surfaces, as well as in the presence of electron-hole (e-h) pairs induced by light- or electron-beam irradiation. We find that both Ga-rich conditions and electronic excitations cause a significant reduction of the adatom diffusion barriers, as required to improve the quality of the material. However, the two effects are nonadditive, as the influence of e-h pairs are found to be less important for the more metallic situations.

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

PubMed

Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

2015-01-14

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

NASA Astrophysics Data System (ADS)

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo; Wierer, Jonathan J.; Tansu, Nelson

2018-05-01

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ˜4-7 times larger radiative efficiency (pump intensity dependent) at green wavelengths than conventional InGaN/GaN MQWs. This study shows the InGaN-based MQWs with AlInN ILs are capable of achieving superior performance to conventional InGaN MQWs emitting at green wavelengths.

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Lee, Ching Ting; Chang, Edward Yi

2018-05-01

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

NASA Astrophysics Data System (ADS)

He, Xiao-Guang; Zhao, De-Gang; Jiang, De-Sheng; Zhu, Jian-Jun; Chen, Ping; Liu, Zong-Shun; Le, Ling-Cong; Yang, Jing; Li, Xiao-Jing; Zhang, Shu-Ming; Yang, Hui

2015-09-01

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 1013 cm-2, electron mobility of 2101 cm2·V-1·s-1, and square resistance of 249 Ω is obtained. Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well

NASA Astrophysics Data System (ADS)

Guizani, I.; Bilel, C.; Habchi, M. M.; Rebey, A.

2017-02-01

The optical gain spectra of doped lattice-matched GaNAsBi-based single quantum well (SQW) was theoretically investigated using a (16 × 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain Gmax was 1.2 ×104 cm-1 for (i-n-i) type doped with N2Dd = 2.5 ×1012 cm-2 . We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain Te 1 - h 1 = 1.55 μ m . The effect of well width on optical gain spectra was also discussed.

Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

2016-12-01

Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

Elimination of trench defects and V-pits from InGaN/GaN structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smalc-Koziorowska, Julita; Grzanka, Ewa; Czernecki, Robert

2015-03-09

The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defectsmore » were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits.« less

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Lightweight concentrator module with 30 percent AM0 efficient GaAs/GaSb tandem cells

NASA Technical Reports Server (NTRS)

Avery, J. E.; Fraas, L. M.; Sundaram, V. S.; Mansoori, N.; Yerkes, J. W.; Brinker, D. J.; Curtis, H. B.; O'Neill, M. J.

1990-01-01

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu

2015-05-15

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A referencemore » LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.« less

Native point defects in GaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kujala, J.; Segercrantz, N.; Tuomisto, F.

2014-10-14

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude.more » We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.« less