Optical plasma monitoring of Y-Ba-Cu-O rf sputter target transients

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1989-12-01

The plasma emission spectra resulting from rf sputtering Y-Ba-Cu-O targets were observed as a function of sputter time. Although most lines of the observed spectra are not attributable to target species, peaks associated with each of the cation elements were resolved. The Ba and Cu peaks can be used as tracking indicators of process conditions. For example, switching from an O2/Ar sputter atmosphere to pure Ar enhanced the Ba peak much more than that associated with Cu. The emission spectra from a newly fabricated target exhibited a slow first-order transient response in seeking equilibrium with the rf plasma. The transient response of a previously sputtered target is also first order but has a much shorter time constant.

Magnetron-Sputtered Amorphous Metallic Coatings

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Mehra, M.; Khanna, S. K.

1985-01-01

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Liu, Cui; Li, Guo-Qing; Gou, Wei; Mu, Zong-Xin; Zhang, Cheng-Wu

2004-11-01

Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5 μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

Optical properties of sputtered aluminum on graphite/epoxy composite material

NASA Technical Reports Server (NTRS)

Witte, William G., Jr.; Teichman, Louis A.

1989-01-01

Solar absorptance, emittance, and coating thickness were measured for a range of coating thicknesses from about 400 A to 2500 A. The coatings were sputtered from an aluminum target onto 1-inch-diameter substrates of T300/5209 graphite/epoxy composite material with two different surface textures. Solar absorptance and emittance values for the specimens with the smooth surface finish were lower than those for the specimens with the rough surface finish. The ratio of solar absorptance to emittance was higher for the smooth specimens, increasing from 2 to 4 over the coating thickness range, than for the rough ones, which had a constant ratio of about 1. The solar absorptance and emittance values were dependent on the thickness of the sputtered coating.

Production of Zr-89 using sputtered yttrium coin targets 89Zr using sputtered yttrium coin targets.

PubMed

Queern, Stacy Lee; Aweda, Tolulope Aramide; Massicano, Adriana Vidal Fernandes; Clanton, Nicholas Ashby; El Sayed, Retta; Sader, Jayden Andrew; Zyuzin, Alexander; Lapi, Suzanne Elizabeth

2017-07-01

An increasing interest in zirconium-89 ( 89 Zr) can be attributed to the isotope's half-life which is compatible with antibody imaging using positron emission tomography (PET). The goal of this work was to develop an efficient means of production for 89 Zr that provides this isotope with high radionuclidic purity and specific activity. We investigated the irradiation of yttrium sputtered niobium coins and compared the yields and separation efficiency to solid yttrium coins. The sputtered coins were irradiated with an incident beam energy of 17.5MeV or 17.8MeV providing a degraded transmitted energy through an aluminum degrader of 12.5MeV or 12.8MeV, respectively, with various currents to determine optimal cyclotron conditions for 89 Zr production. Dissolution of the solid yttrium coin took 2h with 50mL of 2M HCl and dissolution of the sputtered coin took 15-30min with 4mL of 2M HCl. During the separation of 89 Zr from the solid yttrium coins, 77.9 ± 11.2% of the activity was eluted off in an average of 7.3mL of 1M oxalic acid whereas for the sputtered coins, 91 ± 6% was eluted off in an average of 1.2mL of 1M oxalic acid with 100% radionuclidic purity. The effective specific activity determined via DFO-SCN titration from the sputtered coins was 108±7mCi/μmol as compared to 20.3mCi/μmol for the solid yttrium coin production. ICP-MS analysis of the yttrium coin and the sputtered coins showed 99.99% yttrium removed with 178μg of yttrium in the final solution and 99.93-100% of yttrium removed with remaining range of 0-42μg of yttrium in the final solution, respectively. The specific activity calculated for the solid coin and 3 different sputtered coins using the concentration of Zr found via ICP-MS was 140±2mCi/μmol, 300±30mCi/μmol, 410±60mCi/μmol and 1719±5mCi/μmol, respectively. Labeling yields of the 89 Zr produced via sputtered targets for 89 Zr- DFO-trastuzumab were >98%. Overall, these results show the irradiation of yttrium sputtered niobium coins

Sputtering erosion in ion and plasma thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1995-01-01

An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

Supported plasma sputtering apparatus for high deposition rate over large area

DOEpatents

Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

1977-01-01

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

Three-dimensional particle simulation of back-sputtered carbon in electric propulsion test facility

NASA Astrophysics Data System (ADS)

Zheng, Hongru; Cai, Guobiao; Liu, Lihui; Shang, Shengfei; He, Bijiao

2017-03-01

The back-sputtering deposition on thruster surface caused by ion bombardment on chamber wall material affects the performance of thrusters during the ground based electric propulsion endurance tests. In order to decrease the back-sputtering deposition, most of vacuum chambers applied in electric propulsion experiments are equipped with anti-sputtering targets. In this paper, a three-dimensional model of plume experimental system (PES) including double layer anti-sputtering target is established. Simulation cases are made to simulate the plasma environment and sputtering effects when an ion thruster is working. The particle in cell (PIC) method and direct simulation Monte Carlo (DSMC) method is used to calculate the velocity and position of particles. Yamamura's model is used to simulate the sputtering process. The distribution of sputtered anti-sputtering target material is presented. The results show that the double layer anti-sputtering target can significantly reduce the deposition on thruster surface. The back-sputtering deposition rates on thruster exit surface for different cases are compared. The chevrons on the secondary target are rearranged to improve its performance. The position of secondary target has relation with the ion beam divergence angle, and the radius of the vacuum chamber. The back-sputtering deposition rate is lower when the secondary target covers the entire ion beam.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

NASA Astrophysics Data System (ADS)

Anders, André

2017-05-01

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

Solar-Wind Protons and Heavy Ions Sputtering of Lunar Surface Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barghouty, N.; Meyer, Fred W; Harris, Peter R

2011-01-01

Lunar surface materials are exposed to {approx}1 keV/amu solar-wind protons and heavy ions on almost continuous basis. As the lunar surface consists of mostly oxides, these materials suffer, in principle, both kinetic and potential sputtering due to the actions of the solar-wind ions. Sputtering is an important mechanism affecting the composition of both the lunar surface and its tenuous exosphere. While the contribution of kinetic sputtering to the changes in the composition of the surface layer of these oxides is well understood and modeled, the role and implications of potential sputtering remain unclear. As new potential-sputtering data from multi-charged ionsmore » impacting lunar regolith simulants are becoming available from Oak Ridge National Laboratory's MIRF, we examine the role and possible implications of potential sputtering of Lunar KREEP soil. Using a non-equilibrium model we demonstrate that solar-wind heavy ions induced sputtering is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.« less

Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets

DOEpatents

Makowiecki, Daniel M.; Ramsey, Philip B.; Juntz, Robert S.

1995-01-01

An improved method for fabricating pyrolytic graphite sputtering targets with superior heat transfer ability, longer life, and maximum energy transmission. Anisotropic pyrolytic graphite is contoured and/or segmented to match the erosion profile of the sputter target and then oriented such that the graphite's high thermal conductivity planes are in maximum contact with a thermally conductive metal backing. The graphite contact surface is metallized, using high rate physical vapor deposition (HRPVD), with an aluminum coating and the thermally conductive metal backing is joined to the metallized graphite target by one of four low-temperature bonding methods; liquid-metal casting, powder metallurgy compaction, eutectic brazing, and laser welding.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, André

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE PAGES

Anders, André

2017-03-21

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron

Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

2010-01-01

Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

NASA Astrophysics Data System (ADS)

Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

2013-12-01

Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

Sputtering. [as deposition technique in mechanical engineering

NASA Technical Reports Server (NTRS)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Method of sputter etching a surface

DOEpatents

Henager, Jr., Charles H.

1984-01-01

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets

DOEpatents

Makowiecki, D.M.; Ramsey, P.B.; Juntz, R.S.

1995-07-04

An improved method is disclosed for fabricating pyrolytic graphite sputtering targets with superior heat transfer ability, longer life, and maximum energy transmission. Anisotropic pyrolytic graphite is contoured and/or segmented to match the erosion profile of the sputter target and then oriented such that the graphite`s high thermal conductivity planes are in maximum contact with a thermally conductive metal backing. The graphite contact surface is metallized, using high rate physical vapor deposition (HRPVD), with an aluminum coating and the thermally conductive metal backing is joined to the metallized graphite target by one of four low-temperature bonding methods; liquid-metal casting, powder metallurgy compaction, eutectic brazing, and laser welding. 11 figs.

Method of sputter etching a surface

DOEpatents

Henager, C.H. Jr.

1984-02-14

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

Very low pressure high power impulse triggered magnetron sputtering

DOEpatents

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

NASA Astrophysics Data System (ADS)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

Magnetron sputtering source

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

1994-01-01

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

Magnetron sputtering source

DOEpatents

Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

1994-08-02

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

Effect of the target power density on high-power impulse magnetron sputtering of copper

NASA Astrophysics Data System (ADS)

Kozák, Tomáš

2012-04-01

We present a model analysis of high-power impulse magnetron sputtering of copper. We use a non-stationary global model based on the particle and energy conservation equations in two zones (the high density plasma ring above the target racetrack and the bulk plasma region), which makes it possible to calculate time evolutions of the averaged process gas and target material neutral and ion densities, as well as the fluxes of these particles to the target and substrate during a pulse period. We study the effect of the increasing target power density under conditions corresponding to a real experimental system. The calculated target current waveforms show a long steady state and are in good agreement with the experimental results. For an increasing target power density, an analysis of the particle densities shows a gradual transition to a metal dominated discharge plasma with an increasing degree of ionization of the depositing flux. The average fraction of target material ions in the total ion flux onto the substrate is more than 90% for average target power densities higher than 500 W cm-2 in a pulse. The average ionized fraction of target material atoms in the flux onto the substrate reaches 80% for a maximum average target power density of 3 kW cm-2 in a pulse.

Particle-in-Cell Modeling of Magnetron Sputtering Devices

NASA Astrophysics Data System (ADS)

Cary, John R.; Jenkins, T. G.; Crossette, N.; Stoltz, Peter H.; McGugan, J. M.

2017-10-01

In magnetron sputtering devices, ions arising from the interaction of magnetically trapped electrons with neutral background gas are accelerated via a negative voltage bias to strike a target cathode. Neutral atoms ejected from the target by such collisions then condense on neighboring material surfaces to form a thin coating of target material; a variety of industrial applications which require thin surface coatings are enabled by this plasma vapor deposition technique. In this poster we discuss efforts to simulate various magnetron sputtering devices using the Vorpal PIC code in 2D axisymmetric cylindrical geometry. Field solves are fully self-consistent, and discrete models for sputtering, secondary electron emission, and Monte Carlo collisions are included in the simulations. In addition, the simulated device can be coupled to an external feedback circuit. Erosion/deposition profiles and steady-state plasma parameters are obtained, and modifications due to self consistency are seen. Computational performance issues are also discussed. and Tech-X Corporation.

The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

NASA Astrophysics Data System (ADS)

Tidrow, Steven Clay

Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films

Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

NASA Technical Reports Server (NTRS)

Barghouty, Abdulmasser F.; Adams, James H., Jr.

2008-01-01

At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, A.R.; Auciello, O.

1990-05-08

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, Alan R.; Auciello, Orlando

1990-01-01

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

2015-01-01

For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

Low-Energy Sputtering Research

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

Sputtering of uranium

NASA Technical Reports Server (NTRS)

Gregg, R.; Tombrello, T. A.

1978-01-01

Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

Direct current sputtering of boron from boron/boron mixtures

DOEpatents

Timberlake, J.R.; Manos, D.; Nartowitz, E.

1994-12-13

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

Direct current sputtering of boron from boron/coron mixtures

DOEpatents

Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

1994-01-01

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

A new setup for experimental investigations of solar wind sputtering

NASA Astrophysics Data System (ADS)

Szabo, Paul S.; Berger, Bernhard M.; Chiba, Rimpei; Stadlmayr, Reinhard; Aumayr, Friedrich

2017-04-01

The surfaces of Mercury and Moon are not shielded by a thick atmosphere and therefore they are exposed to bombardment by charged particles, ultraviolet photons and micrometeorites. These influences lead to an alteration and erosion of the surface, and the emitted atoms and molecules form a thin atmosphere, an exosphere, around these celestial bodies [1]. The composition of these exospheres is connected to the surface composition and has been subject to flyby measurements by satellites. Model calculations which include the erosion mechanisms can be used as a method of comparison for such exosphere measurements and allow conclusions about the surface composition. Surface sputtering induced by solar wind ions hereby represents a major contribution to the erosion of the surfaces of Mercury and Moon [1]. However, the experimental database for sputtering of respective analogue materials by solar wind ions, which would be necessary for exact modelling of the space weathering process, is still in its early stages. Sputtering experiments have been performed at TU Wien during the past years using a quartz crystal microbalance (QCM) technique [2]. Target material is deposited on the quartz surface as a thin layer and the quartz's resonance frequency is measured under ion bombardment. The sputter yield can then be calculated from the frequency change and the ion current [2]. In order to remove the restrictions of a thin layer QCM target and simplify experiments with composite targets, a new QCM catcher setup was developed. In the new design, the QCM is placed beside the target holder and acts as a catcher for material that is sputtered from the target surface. By comparing the catcher signal to reference measurements and SDTrimSP simulations [3], the target sputter yield can be determined. In order to test the setup, we have performed experiments with a Au-coated QCM target under 2 keV Ar+ bombardment so that both the mass changes at the target and at the catcher could be

Ion radiation albedo effect: influence of surface roughness on ion implantation and sputtering of materials

NASA Astrophysics Data System (ADS)

Li, Yonggang; Yang, Yang; Short, Michael P.; Ding, Zejun; Zeng, Zhi; Li, Ju

2017-01-01

In fusion devices, ion retention and sputtering of materials are major concerns in the selection of compatible plasma-facing materials (PFMs), especially in the context of their microstructural conditions and surface morphologies. We demonstrate how surface roughness changes ion implantation and sputtering of materials under energetic ion irradiation. Using a new, sophisticated 3D Monte Carlo (MC) code, IM3D, and a random rough surface model, ion implantation and the sputtering yields of tungsten (W) with a surface roughness varying between 0-2 µm have been studied for irradiation by 0.1-1 keV D+, He+ and Ar+ ions. It is found that both ion backscattering and sputtering yields decrease with increasing roughness; this is hereafter called the ion radiation albedo effect. This effect is mainly dominated by the direct, line-of-sight deposition of a fraction of emitted atoms onto neighboring asperities. Backscattering and sputtering increase with more oblique irradiation angles. We propose a simple analytical formula to relate rough-surface and smooth-surface results.

Development of RF sputtered chromium oxide coating for wear application

NASA Technical Reports Server (NTRS)

Bhushan, B.

1979-01-01

The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Sputtering Erosion Measurement on Boron Nitride as a Hall Thruster Material

NASA Technical Reports Server (NTRS)

Britton, Melissa; Waters, Deborah; Messer, Russell; Sechkar, Edward; Banks, Bruce

2002-01-01

The durability of a high-powered Hall thruster may be limited by the sputter erosion resistance of its components. During normal operation, a small fraction of the accelerated ions will impact the interior of the main discharge channel, causing its gradual erosion. A laboratory experiment was conducted to simulate the sputter erosion of a Hall thruster. Tests of sputter etch rate were carried out using 300 to 1000 eV Xenon ions impinging on boron nitride substrates with angles of attack ranging from 30 to 75 degrees from horizontal. The erosion rates varied from 3.41 to 14.37 Angstroms/[sec(mA/sq cm)] and were found to depend on the ion energy and angle of attack, which is consistent with the behavior of other materials.

Heavy particle transport in sputtering systems

NASA Astrophysics Data System (ADS)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Simple model of surface roughness for binary collision sputtering simulations

NASA Astrophysics Data System (ADS)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-02-01

It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

High-density convergent plasma sputtering device for a liquid metal target using an unheated glass plate

NASA Astrophysics Data System (ADS)

Motomura, T.; Tabaru, T.

2018-06-01

A high-density convergent plasma sputtering device has been developed for a liquid metal target, using an unheated glass plate. The convergent magnetic field lines, which are produced by an external solenoid coil and a permanent magnet positioned behind the liquid metal target, effectively transport high-density plasmas near the target. In this study, a liquid gallium target was sputtered with nitrogen plasmas, without additive gas required for depositing gallium nitride films on the unheated substrates. The deposition rate of the GaN film was estimated at ˜13 nm/min at a gas pressure of 0.2 Pa. A strong diffraction peak was observed along the GaN (002) axis, with the use of an unheated glass plate and a target-substrate distance of ˜45 mm.

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Sputtering yields of carbon based materials under high particle flux with low energy

NASA Astrophysics Data System (ADS)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-04-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

NASA Astrophysics Data System (ADS)

Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

2016-03-01

Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

Composition of RF-sputtered refractory compounds determined by X-ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1978-01-01

RF-sputtered coatings of CrB2, MoSi2, Mo2C, TiC, and MoS2 were examined by X-ray photoelectron spectroscopy (XPS). Data on stoichiometry, impurity content, and chemical bonding were obtained. The influences of sputtering target history, deposition time, RF power level, and substrate bias were studied. Significant deviations from stoichiometry and high oxide levels were related to target outgassing. The effect of substrate bias depended on the particular coating material studied.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, John R.

1996-01-01

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, J.R.

1996-04-30

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

Sputtered silicon nitride coatings for wear protection

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1982-01-01

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas

2014-07-01

This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition ratemore » from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.« less

Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuschel, Thomas; Keudell, Achim von

2010-05-15

Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with thismore » microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.« less

Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

NASA Astrophysics Data System (ADS)

He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

1998-02-01

Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions.more » These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.« less

A model for sputtering from solid surfaces bombarded by energetic clusters

NASA Astrophysics Data System (ADS)

Benguerba, Messaoud

2018-04-01

A model is developed to explain and predict the sputtering from solid surfaces bombarded by energetic clusters, on the basis of shock wave generated at the impact of cluster. Under the shock compression the temperature increases causing the vaporization of material that requires an internal energy behind the shock, at least, of about twice the cohesive energy of target. The sputtering is treated as a gas of vaporized particles from a hemispherical volume behind the shock front. The sputter yield per cluster atoms is given as a universal function depending on the ratio of target to cluster atomic density and the ratio of cluster velocity to the velocity calculated on the basis of an internal energy equals about twice cohesive energy. The predictions of the model for self sputter yield of copper, gold, tungsten and of silver bombarded by C60 clusters agree well, with the corresponding data simulated by molecular dynamics.

Ion beam sputtering of fluoropolymers

NASA Technical Reports Server (NTRS)

Sovey, J. S.

1978-01-01

Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

Monte Carlo simulation of the influence of pressure and target-substrate distance on the sputtering process for metal and semiconductor layers

NASA Astrophysics Data System (ADS)

Bouazza, Abdelkader; Settaouti, Abderrahmane

2016-07-01

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3-1 Pa) and target-substrate distances (8-20 cm) is obtained.

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Shinde, D. D.; Misal, J. S.; Kamble, N. M.; Tokas, R. B.; Biswas, A.; Poswal, A. K.; Thakur, S.; Bhattacharyya, D.; Sahoo, N. K.; Sabharwal, S. C.

2010-02-01

Titania-silica (TiO2/SiO2) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

PubMed

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-01-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

NASA Astrophysics Data System (ADS)

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-09-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

A thermalized ion explosion model for high energy sputtering and track registration

NASA Technical Reports Server (NTRS)

Seiberling, L. E.; Griffith, J. E.; Tombrello, T. A.

1980-01-01

A velocity spectrum of neutral sputtered particles as well as a low resolution mass spectrum of sputtered molecular ions was measured for 4.74 MeV F-19(+2) incident of UF4. The velocity spectrum is dramatically different from spectra taken with low energy (keV) bombarding ions, and is shown to be consistent with a hot plasma of atoms in thermal equilibrium inside the target. A thermalized ion explosion model is proposed for high energy sputtering which is expected to describe track formation in dielectric materials. The model is shown to be consistent with the observed total sputtering yield and the dependence of the yield on the primary ionization rate of the incident ion.

Low energy sputtering of cobalt by cesium ions

NASA Technical Reports Server (NTRS)

Handoo, A.; Ray, Pradosh K.

1989-01-01

An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

Linear facing target sputtering of the epitaxial Ga-doped ZnO transparent contact layer on GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Shin, Hyun-Su; Lee, Ju-Hyun; Kwak, Joon-Seop; Lee, Hyun Hwi; Kim, Han-Ki

2013-10-01

In this study, we reported on the plasma damage-free sputtering of epitaxial Ga-doped ZnO (GZO) films on the p-GaN layer for use as a transparent contact layer (TCL) for GaN-based light-emitting diodes (LEDs) using linear facing target sputtering (LFTS). Effective confinement of high-density plasma between faced GZO targets and the substrate position located outside of the plasma region led to the deposition of the epitaxial GZO TCL with a low sheet resistance of 25.7 Ω/s and a high transmittance of 84.6% on a p-GaN layer without severe plasma damage, which was found using the conventional dc sputtering process. The low turn-on voltage of the GaN-based LEDs with an LFTS-grown GZO TCL layer that was grown at a longer target-to-substrate distance (TSD) indicates that the plasma damage of the GaN-LED could be effectively reduced by adjusting the TSD during the LFTS process.

Computer simulation of sputtering induced by swift heavy ions

NASA Astrophysics Data System (ADS)

Kucharczyk, P.; Füngerlings, A.; Weidtmann, B.; Wucher, A.

2018-07-01

New experimental results regarding the mass and charge state distribution of material sputtered under irradiation with swift heavy ions suggest fundamental differences between the ejection mechanisms under electronic and nuclear sputtering conditions. In order to illustrate the difference, computer simulations based on molecular dynamics were performed to model the surface ejection process of atoms and molecules induced by a swift heavy ion track. In a first approach, the track is homogeneously energized by assigning a fixed energy to each atom with randomly oriented direction of motion within a cylinder of a given radius around the projectile ion trace. The remainder of the target crystal is assumed to be at rest, and the resulting lattice dynamics is followed by molecular dynamics. The resulting sputter yield is calculated as a function of track radius and energy and compared to corresponding experimental data in order to find realistic values for the effective deposited lattice energy density. The sputtered material is analyzed with respect to emission angle and energy as well as depth of origin. The results are compared to corresponding data from keV sputter simulations. As a second step of complexity, the homogeneous and monoenergetic lattice energization is replaced by a starting energy distribution described by a local lattice temperature. As a first attempt, the respective temperature is assumed constant within the track, and the results are compared with those obtained from monoenergetic energization with the same average energy per atom.

Development of sputtered techniques for thrust chambers, task 1. [evaluation of filler materials for regeneratively cooled thrust chambers

NASA Technical Reports Server (NTRS)

Mullaly, J. R.; Schmid, T. E.; Hecht, R. J.

1974-01-01

Filler materials proposed for use in the sputter fabrication regeneratively cooled thrust chambers were evaluated. Low melting castable alloys, CERROBEND. CERROCAST, and CERROTRU, slurry applied SERMETEL 481 and flame-sprayed aluminum were investigated as filler materials. Sputter deposition from a cylindrical cathode inverted magnestron was used to apply an OFHC copper closeout layer to filled OFHC copper ribbed-wall cylindrical substrates. The sputtered closeout layer structure was evaluated with respect to filler material contamination, predeposition machining and finishing operations, and deposition parameters. The application of aluminum by flame-spraying resulted in excessiver filler porosity. Though the outgassing from this porosity was found to be detrimental to the closeout layer structure, bond strengths in excess of 10,500 psi were achieved. Removal of the aluminum from the grooves was readily accomplished by leaching in a 7.0 molar solution of sodium hydroxide at 353 K. Of the other filler materials evaluated, CERROTRU was found to be the most suitable material with respect to completely filling the ribbed-wall cylinders and vacuum system compatibility. However, bond contamination resulted in low closeout layer bond strength with the CERROTRU filler. CERROBEND, CERROCAST, and SERMETEL 481 were found to be unacceptable as filler materials.

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se; Sterner, Jan; Platzer-Björkman, Charlotte

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device.more » Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.« less

Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

NASA Astrophysics Data System (ADS)

Lackner, Peter; Choi, Joong Il Jake; Diebold, Ulrike; Schmid, Michael

2017-10-01

A sputter deposition source for the use in ultrahigh vacuum (UHV) is described, and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas and the Ar+ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar+ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for the deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of 9 ×1 0-6 mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of ≈1 ML in 250 s was achieved at the substrate (at a distance of ≈50 mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar+ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target.

Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

NASA Astrophysics Data System (ADS)

Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

2016-01-01

In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

NASA Astrophysics Data System (ADS)

Jeong, Jin-A.; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

2010-11-01

We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/squ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Radiofrequency-sputtered coatings for lubrication system components and other complex surfaces

NASA Technical Reports Server (NTRS)

Spalvins, T.

1972-01-01

Irregularly shaped surfaces, such as lubrication system components (ball bearings, seals, gears, etc.), can be coated on all surfaces, including irregular shapes, when radiofrequency sputtering is used. When the specimen is properly located with respect to the sputtering target, the sputtered material covers the entire surface of the object irrespective of its geometrical configuration. An adherent, dense film is formed. The film thickness varies from 20 to 50 percent on, for example, a hearing cage or race depending on its geometry. When sputtered solid film lubricants such as molybdenum disulfide are used, a film thickness only of the order of 10 to the minus 7th power m (thousands of angstroms) is required at the contacting areas. It is only essential to determine the required film thickness at the critical areas in need of lubrication. The sections outside the areas to be lubricated fall within the thickness deviation range of 20 to 50 percent, which still constitutes a negligible change respect to tolerance requirements.

Novel Cryogenic Heaters: Sputter Deposited Cermet Materials with Low Temperature Coefficients of Resistivity

NASA Astrophysics Data System (ADS)

Yeager, C. J.; Courts, S. S.; Chapin, L.

2004-06-01

The electrical properties of a novel cryogenic heater are presented. A new ceramic-metal composition (cermet) has been developed that can be sputter deposited. This material has a very low temperature coefficient of resistivity. Resistivity measurements as a function of temperature are presented. The cermet has a constant resistance to within 0.1% between 77 K and 50 mK. At 4.2 K the d(logR)/d(logT) value is approximately -0.0005. The resistance change between room temperature and 4.2 K is 2.5%. The cermet heater will be compared to other low temperature coefficient of resistivity alloys (Evanohm, phosphor-bronze, nichrome and platinum-tungsten wire) that are used for cryogenic heaters and fixed resistors. Unlike the wire alloys, this material can be sputter deposited. This allows various die designs (meander patterns) to control the final resistance. The die can be mounted into standard commercial cryogenic sensor packages. Compared to other wire alloys, this allows for a simpler implementation for a cryogenic heater and fixed resistance standards. The material can also be deposited onto existing structures such as MEMS based heat capacity chip under development.

A Closer Look at Solar Wind Sputtering of Lunar Surface Materials

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Mansur, L.; Reinhold, C.

2008-01-01

Solar-wind induced potential sputtering of the lunar surface may be a more efficient erosive mechanism than the "standard" kinetic (or physical) sputtering. This is partly based on new but limited laboratory measurements which show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. The enhancements seen in the laboratory can be orders of magnitude for some surfaces and highly charged incident ions, but seem to depend very sensitively on the properties of the impacted surface in addition to the fluence, energy and charge of the impacting ion. For oxides, potential sputtering yields are markedly enhanced and sputtered species, especially hydrogen and light ions, show marked dependence on both charge and dose.

Very thick mixture oxide ion beam sputtering films for investigation of nonlinear material properties

NASA Astrophysics Data System (ADS)

Steinecke, Morten; Kiedrowski, Kevin; Jupé, Marco; Ristau, Detlev

2017-11-01

Currently, optical coating technology is facing a multitude of new challenges. Some of the new requirements are addressed to the spectral behavior of complex coatings, but in addition, the power handling capabilities gain in importance. Often, both demands are combined in the same component, for example in chirped mirrors for ultra-short pulse applications. The consequent demands on the accuracy of the layer thicknesses and the stability of the refractive indices require a deposition by sputtering processes. For high end components, Ion Beam Sputtering (IBS) is often the method of choice. Utilizing the Co-sputtering technique, IBS additionally allows a higher flexibility in the possible coating materials by mixing two pure oxides into one ternary composite material. These composite materials are also advantageous for researching third order nonlinear effects, which can limit the functionality of optics at high powers. The layer thicknesses required for this fundamental research often exceed 100 µm, which therefore makes low stress and absorption in the layer materials mandatory. A reduction of these decisive properties can be achieved by a thermal treatment of the sample. Usually, this is performed by a post-deposition annealing. Alternatively, the coating temperature can be increased. This is rarely done for IBS processes, but it can be assumed, that the effect is comparable to that of ex-situ annealing. In this work, different ternary mixtures of Al2O3/SiO2, HfO2/Al2O3 as well as Nb2O5/Al2O3 were investigated for their layer stress and absorption, applying both, in-situ temperature treatment as well as post manufacturing annealing. It is observed that suitable thermal treatment as well as material composition can significantly reduce layer stress and absorption in the deposited layer. This enabled the manufacturing of layers with thicknesses of over 180 µm as well as the measurement of nonlinear properties of the deposited materials. Contribution to the topical

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, H.S., E-mail: 160184@mail.csc.com.tw; Chiu, C.H.; Hong, I.T.

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes,more » which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.« less

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Collision-spike sputtering of Au nanoparticles

DOE PAGES

Sandoval, Luis; Urbassek, Herbert M.

2015-08-06

Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; themore » remainder is transported away by the transmitted projectile and the ejecta. As a result, the sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering.« less

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

NASA Astrophysics Data System (ADS)

Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

2014-04-01

The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps

RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

NASA Astrophysics Data System (ADS)

Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

2017-08-01

A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

Sputtering and ion plating for aerospace applications

NASA Technical Reports Server (NTRS)

Spalvins, T.

1981-01-01

Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3-dimensional coverage are the primary attributes of this technology.

Sputtering and ion plating for aerospace applications

NASA Technical Reports Server (NTRS)

Spalvins, T.

1981-01-01

Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3 dimensional coverage are the primary attributes of this technology.

Nuclear reactor target assemblies, nuclear reactor configurations, and methods for producing isotopes, modifying materials within target material, and/or characterizing material within a target material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toth, James J.; Wall, Donald; Wittman, Richard S.

Target assemblies are provided that can include a uranium-comprising annulus. The assemblies can include target material consisting essentially of non-uranium material within the volume of the annulus. Reactors are disclosed that can include one or more discrete zones configured to receive target material. At least one uranium-comprising annulus can be within one or more of the zones. Methods for producing isotopes within target material are also disclosed, with the methods including providing neutrons to target material within a uranium-comprising annulus. Methods for modifying materials within target material are disclosed as well as are methods for characterizing material within a targetmore » material.« less

Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Grenadyorov, A. S.; Oskomov, K. V.; Solov'ev, A. A.; Rabotkin, S. V.; Zakharov, A. N.; Semenov, V. A.; Oskirko, V. O.; Yelgin, Yu. I.; Korneva, O. S.

2017-12-01

The method of magnetron sputtering was used to produce a-C and a-C:Ni films on substrates of monocrystalline silicon and thermoelectric material of n-type ((Bi2Te3)0.94(Bi2Se3)0.06) and p-type ((Bi2Te3)0.20(Sb2Te3)0.80) conductivity. The authors studied the effect of Ni concentration on specific electric resistance, hardness and adhesion of the produced films. It was demonstrated that specific resistance of a-C films deposited by graphite target sputtering when supplying high bias voltage onto the substrate can be reduced by increasing the share of graphitized carbon. Adding Ni to such films allows additionally reducing their specific resistance. The increase in Ni content is accompanied with the decrease in hardness and adhesion of a-C:Ni films. The acquired values of specific electric resistance and adhesion of a-C:Ni films to thermoelectric materials allow using them as barrier anti-diffusion coatings of thermoelectric modules.

Sputtering Erosion in the Ion Thruster

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.; Mantenieks, Maris A. (Technical Monitor)

2000-01-01

During the first phase of this research, the sputtering yields of molybdenum by low energy (100 eV and higher) xenon ions were measured by using the methods of secondary neutral mass spectrometry (SNMS) and Rutherford backscattering spectrometry (RBS). However, the measured sputtering yields were found to be far too low to explain the sputtering erosions observed in the long-duration tests of ion thrusters. The only difference between the sputtering yield measurement experiments and the ion thruster tests was that the later are conducted at high ion fluences. Hence, a study was initiated to investigate if any linkage exists between high ion fluence and an enhanced sputtering yield. The objective of this research is to gain an understanding of the causes of the discrepancies between the sputtering rates of molybdenum grids in an ion thruster and those measured from our experiments. We are developing a molecular dynamics simulation technique for studying low-energy xenon ion interactions with molybdenum. It is difficult to determine collision sequences analytically for primary ions below the 200 eV energy range where the ion energy is too low to be able to employ a random cascade model with confidence and it is too high to have to consider only single collision at or near the surface. At these low energies, the range of primary ions is about 1 to 2 nm from the surface and it takes less than 4 collisions on the average to get an ion to degrade to such an energy that it can no longer migrate. The fine details of atomic motion during the sputtering process are revealed through computer simulation schemes. By using an appropriate interatomic potential, the positions and velocities of the incident ion together with a sufficient number of target atoms are determined in small time steps. Hence, it allows one to study the evolution of damages in the target and its effect on the sputtering yield. We are at the preliminary stages of setting up the simulation program.

Ion beam sputter etching and deposition of fluoropolymers

NASA Technical Reports Server (NTRS)

Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

1978-01-01

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

The effect of plasma impurities on the sputtering of tungsten carbide

NASA Astrophysics Data System (ADS)

Vörtler, K.; Björkas, C.; Nordlund, K.

2011-03-01

Understanding of sputtering by ion bombardment is needed in a wide range of applications. In fusion reactors, ion impacts originating from a hydrogen-isotope-rich plasma will lead, among other effects, to sputtering of the wall material. To study the effect of plasma impurities on the sputtering of the wall mixed material tungsten carbide molecular dynamics simulations were carried out. Simulations of cumulative D cobombardment with C, W, He, Ne or Ar impurities on crystalline tungsten carbide were performed in the energy range 100-300 eV. The sputtering yields obtained at low fluences were compared to steady state SDTrimSP yields. During bombardment single C atom sputtering was preferentially observed. We also detected significant WxCy molecule sputtering. We found that this molecule sputtering mechanism is of physical origin.

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

NASA Astrophysics Data System (ADS)

Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Rei; Suda, Yoshiaki

2017-06-01

Tris(8-hydroxyquinolinato)aluminum (Alq3) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

NASA Astrophysics Data System (ADS)

Komlev, Anton A.; Minzhulina, Ekaterina A.; Smirnov, Vladislav V.; Shapovalov, Viktor I.

2018-01-01

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm2 and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process.

Co-sputtered amorphous Ge-Sb-Se thin films: optical properties and structure

NASA Astrophysics Data System (ADS)

Halenkovič, Tomáš; Němec, Petr; Gutwirth, Jan; Baudet, Emeline; Specht, Marion; Gueguen, Yann; Sangleboeuf, J.-C.; Nazabal, Virginie

2017-05-01

The unique properties of amorphous chalcogenides such as wide transparency in the infrared region, low phonon energy, photosensitivity and high linear and nonlinear refractive index, make them prospective materials for photonics devices. The important question is whether the chalcogenides are stable enough or how the photosensitivity could be exacerbated for demanded applications. Of this view, the Ge-Sb-Se system is undoubtedly an interesting glassy system given the antinomic behavior of germanium and antimony with respect to photosensitivity. The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. Radio-frequency sputtering is widely used for film fabrication due to its relative simplicity, easy control, and often stoichiometric material transfer from target to substrate. The advantage of this technique is the ability to explore a wide range of chalcogenide film composition by means of adjusting the contribution of each target. This makes the technique considerably effective for the exploration of properties mentioned above. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy Egopt was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy. The films structure was determined using Raman scattering spectroscopy.

In-situ sputtering apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.

A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and amore » cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.« less

Neutral beam dose and sputtering characteristics in an ion implantation system

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

1973-01-01

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

A comparative study on NbOx films reactively sputtered from sintered and cold gas sprayed targets

NASA Astrophysics Data System (ADS)

Lorenz, Roland; O'Sullivan, Michael; Fian, Alexander; Sprenger, Dietmar; Lang, Bernhard; Mitterer, Christian

2018-04-01

The aim of this work is to evaluate novel cold gas sprayed Nb targets in a reactive sputter deposition process of thin films with respect to the widely used sintered Nb targets. With the exception of a higher target discharge voltage of ∼100 V for the cold gas sprayed targets and the thus higher film growth rate compared to sintered targets, NbOx films with comparable microstructure and properties were obtained for both target variants. The amorphous films with thicknesses between 2.9 and 4.9 μm present an optical shift from dark and non-transparent towards transparent properties, as the oxygen partial pressure increases. X-ray photoelectron spectroscopy confirms the occurrence of the Nb5+ oxidation state for the highest oxygen partial pressure, while Nb4+ is additionally present at lower oxygen partial pressure settings. With a maximal transparency of ∼80% and a refractive index of ∼2.5, the transparent films show characteristics similar to Nb2O5.

Note on the artefacts in SRIM simulation of sputtering

NASA Astrophysics Data System (ADS)

Shulga, V. I.

2018-05-01

The computer simulation program SRIM, unlike other well-known programs (MARLOWE, TRIM.SP, etc.), predicts non-zero values of the sputter yield at glancing ion bombardment of smooth amorphous targets and, for heavy ions, greatly underestimates the sputter yield at normal incidence. To understand the reasons for this, the sputtering of amorphous silicon bombarded with different ions was modeled here using the author's program OKSANA. Most simulations refer to 1 keV Xe ions, and angles of incidence cover range from 0 (normal incidence) to almost 90°. It has been shown that SRIM improperly simulates the initial stage of the sputtering process. Some other artefacts in SRIM calculations of sputtering are also revealed and discussed.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersson, Joakim; Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

DOEpatents

Jeffery, F.R.; Shanks, H.R.

1980-08-26

A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Frictional and morphological properties of Au-MoS2 films sputtered from a compact target

NASA Technical Reports Server (NTRS)

Spalvins, T.

1984-01-01

AuMoS2 films 0.02 to 1.2 microns thick were sputtered from target compacted from 5 wt % Au + 95 wt % MoS2, to investigate the frictional and morphological film growth characteristics. The gold dispersion effects in MoS2 films are of interest to increase the densitification and strengthening of the film structure. Three microstructural growth stages were identified on the nano-micro-macrostructural level. During sliding both sputtered Au-MoS2 and MoS2 films have a tendency to break within the columner region. The remaining or effective film, about 0.2 microns thick, performs the lubrication. The Au-MoS2 films displayed a lower friction coefficient with a high degree of frictional stability and less wear debris generation as compared to pure MoS2 films. The more favorable frictional characteristics of the Au-MoS2 films are attributed to the effective film thickness and the high density packed columner zone which has a reduced effect on the fragmentation of the tapered crystallites during fracture.

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

DOE PAGES

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

2017-02-01

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grainsmore » and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.« less

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Phase separation in NiCrN coatings induced by N2 addition in the gas phase: A way to generate magnetic thin films by reactive sputtering of a non-magnetic NiCr target

NASA Astrophysics Data System (ADS)

Luciu, I.; Duday, D.; Choquet, P.; Perigo, E. A.; Michels, A.; Wirtz, T.

2016-12-01

Magnetic coatings are used for a lot of applications from data storage in hard discs, spintronics and sensors. Meanwhile, magnetron sputtering is a process largely used in industry for the deposition of thin films. Unfortunately, deposition of magnetic coatings by magnetron sputtering is a difficult task due to the screening effect of the magnetic target lowering the magnetic field strength of the magnet positioned below the target, which is used to generate and trap ions in the vicinity of the target surface to be sputtered. In this work we present an efficient method to obtain soft magnetic thin films by reactive sputtering of a non-magnetic target. The aim is to recover the magnetic properties of Ni after dealloying of Ni and Cr due to the selective reactivity of Cr with the reactive nitrogen species generated during the deposition process. The effects of nitrogen content on the dealloying and DC magnetron sputtering (DCMS) deposition processes are studied here. The different chemical compositions, microstructures and magnetic properties of DCMS thin films obtained by sputtering in reactive gas mixtures with different ratios of Ar/N2 from a non-magnetic Ni-20Cr target have been determined. XPS data indicate that the increase of nitrogen content in the films has a strong influence on the NiCr phase decomposition into Ni and CrN, leading to ferromagnetic coatings due to the Ni phase. XRD results show that the obtained Ni-CrN films consist of a metallic fcc cubic Ni phase mixed with fcc cubic CrN. The lattice parameter decreases with the N2 content and reaches the theoretical value of the pure fcc-Ni, when Cr is mostly removed from the Ni-Cr phase. Dealloying of Cr from a Ni80-Cr20 solid solution is achieved in our experimental conditions and the deposition of Ni ferromagnetic coatings embedding CrN from a non-magnetic target is possible with reactive DC magnetron sputtering.

Deposition of reactively ion beam sputtered silicon nitride coatings

NASA Technical Reports Server (NTRS)

Grill, A.

1982-01-01

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

MgAl{sub 2}O{sub 4}(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmoubarik, Mohamed; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu

We developed a fabrication process of an epitaxial MgAl{sub 2}O{sub 4} barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl{sub 2}O{sub 4} spinel sintered target. Annealing the sputter-deposited MgAl{sub 2}O{sub 4} layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl{sub 2}O{sub 4}/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative methodmore » for the realization of high performance MTJs with a spinel-based tunnel barrier.« less

Reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

2012-10-01

Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

PubMed

Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

2016-08-01

Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. © 2015 Wiley Periodicals, Inc.

Development of sputtered techniques for thrust chambers

NASA Technical Reports Server (NTRS)

Mullaly, J. R.; Hecht, R. J.; Schmid, T. E.; Torrey, C. T.

1975-01-01

Techniques and materials were developed and evaluated for the fabrication and coating of advanced, long life, regeneratively cooled thrust chambers. Materials were analyzed as fillers for sputter application of OFHC copper as a closeout layer to channeled inner structures; of the materials evaluated, aluminum was found to provide the highest bond strength and to be the most desirable for chamber fabrication. The structures and properties were investigated of thick sputtered OFHC copper, 0.15 Zr-Cu, Al2O3,-Cu, and SiC-Cu. Layered structures of OFHC copper and 0.15 Zr-Cu were investigated as means of improving chamber inner wall fatigue life. The evaluation of sputtered Ti-5Al-2.5Sn, NASA IIb-11, aluminum and Al2O3-Al alloys as high strength chamber outer jackets was performed. Techniques for refurbishing degraded thrust chambers with OFHC copper and coating thrust chambers with protective ZrO2 and graded ZrO2-copper thermal barrier coatings were developed.

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures.

PubMed

Saito, Yuta; Fons, Paul; Makino, Kotaro; Mitrofanov, Kirill V; Uesugi, Fumihiko; Takeguchi, Masaki; Kolobov, Alexander V; Tominaga, Junji

2017-10-12

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi 55 Te 45 to Bi 43 Te 57 when a Bi 2 Te 3 alloy target is used, and from Bi 42 Te 58 to Bi 40 Te 60 (Bi 2 Te 3 ) for a Te-rich Bi 30 Te 70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi 2 Te 3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi 4 Te 3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Discharge current modes of high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Zhongzhen, E-mail: wuzz@pkusz.edu.cn; Xiao, Shu; Ma, Zhengyong

2015-09-15

Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

Correlation of process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target

NASA Astrophysics Data System (ADS)

Bundesmann, Carsten; Lautenschläge, Thomas; Spemann, Daniel; Finzel, Annemarie; Mensing, Michael; Frost, Frank

2017-10-01

The correlation between process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target was investigated. TiO2 films were grown under systematic variation of ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, polar emission angle) and characterized with respect to film thickness, growth rate, structural properties, surface topography, composition, optical properties, and mass density. Systematic variations of film properties with the scattering geometry, namely the scattering angle, have been revealed. There are also considerable differences in film properties when changing the process gas from Ar to Xe. Similar systematics were reported for TiO2 films grown by reactive ion beam sputter deposition from a metal target [C. Bundesmann et al., Appl. Surf. Sci. 421, 331 (2017)]. However, there are some deviations from the previously reported data, for instance, in growth rate, mass density and optical properties.

Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets

NASA Astrophysics Data System (ADS)

Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi

2000-10-01

Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.

Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1998-01-01

An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

Transmission sputtering under diatomic molecule bombardment. Model calculations

NASA Astrophysics Data System (ADS)

Bitensky, I. S.

1996-04-01

Transmission sputtering means that emission of secondary particles is studied from the downstream side of a bombarded foil. Nonlinear effects in sputtering manifest themselves as a deviation of sputtering yield under molecular ion bombardment from the sum of the yields induced by the constituents at the same velocity. In the reflection geometry the overlap of the spike regions reaches maximum, while in transmission the degree of overlap depends on the projectile and on the foil thickness. It has been shown that the transmission sputtering yield can be described by a function of a scaling parameter determined by beam-foil characteristics and a mechanism of nonlinear sputtering. Calculations of the transmission yield have been made in the thermal spike and shock wave models. The results of calculations are compared with experimental data on phenylalanine molecular ion desorption from organic targets induced by Au + and Au 2+ impact. Suggestions for further experimental study are made.

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Large Area Sputter Coating on Glass

NASA Astrophysics Data System (ADS)

Katayama, Yoshihito

Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

2009-05-01

Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

Sputtering phenomena in ion thrusters

NASA Technical Reports Server (NTRS)

Robinson, R. S.; Rossnagel, S. M.

1983-01-01

Sputtering effects in discharge chambers of ion thrusters are lifetime limiting in basically two ways: (1) ion bombardment of critical thruster components at energies sufficient to cause sputtering removes significant quantities of material; enough to degrade operation through adverse dimensional changes or possibly lead to complete component failure, and (2) metals sputtered from these intensely bombarded components are deposited in other locations as thin films and subsequently flake or peel off; the flakes then lodge elsewhere in the discharge chamber with the possibility of providing conductive paths for short circuiting of thruster components such as the ion optics. This experimental work has concentrated in two areas. The first has been to operate thrusters for multi-hour periods and to observe and measure the films found inside the thruster. The second was to simulate the environment inside the discharge chamber of the thruster by means of a dual ion beam system. Here, films were sputter deposited in the presence of a second low energy bombarding beam to simulate film deposition on thruster interior surfaces that undergo simultaneous sputtering and deposition. Mo presents serious problems for use in a thruster as far as film deposition is concerned. Mo films were found to be in high stress, making them more likely to peel and flake.

Defects, stoichiometry, and electronic transport in SrTiO{sub 3-δ} epilayers: A high pressure oxygen sputter deposition study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ambwani, P.; Xu, P.; Jeong, J. S.

SrTiO{sub 3} is not only of enduring interest due to its unique dielectric, structural, and lattice dynamical properties, but is also the archetypal perovskite oxide semiconductor and a foundational material in oxide heterostructures and electronics. This has naturally focused attention on growth, stoichiometry, and defects in SrTiO{sub 3}, one exciting recent development being such precisely stoichiometric defect-managed thin films that electron mobilities have finally exceeded bulk crystals. This has been achieved only by molecular beam epitaxy, however (and to a somewhat lesser extent pulsed laser deposition (PLD)), and numerous open questions remain. Here, we present a study of the stoichiometry,more » defects, and structure in SrTiO{sub 3} synthesized by a different method, high pressure oxygen sputtering, relating the results to electronic transport. We find that this form of sputter deposition is also capable of homoepitaxy of precisely stoichiometric SrTiO{sub 3}, but only provided that substrate and target preparation, temperature, pressure, and deposition rate are carefully controlled. Even under these conditions, oxygen-vacancy-doped heteroepitaxial SrTiO{sub 3} films are found to have carrier density, mobility, and conductivity significantly lower than bulk. While surface depletion plays a role, it is argued from particle-induced X-ray emission (PIXE) measurements of trace impurities in commercial sputtering targets that this is also due to deep acceptors such as Fe at 100's of parts-per-million levels. Comparisons of PIXE from SrTiO{sub 3} crystals and polycrystalline targets are shown to be of general interest, with clear implications for sputter and PLD deposition of this important material.« less

Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy

Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

NASA Astrophysics Data System (ADS)

Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

2016-01-01

As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10⿿xAgx(PO4)6(OH)2⿿x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

Nanostructured Ti-Ta thin films synthesized by combinatorial glancing angle sputter deposition

NASA Astrophysics Data System (ADS)

Motemani, Yahya; Khare, Chinmay; Savan, Alan; Hans, Michael; Paulsen, Alexander; Frenzel, Jan; Somsen, Christoph; Mücklich, Frank; Eggeler, Gunther; Ludwig, Alfred

2016-12-01

Ti-Ta alloys are attractive materials for applications in actuators as well as biomedical implants. When fabricated as thin films, these alloys can potentially be employed as microactuators, components for micro-implantable devices and coatings on surgical implants. In this study, Ti100-x Ta x (x = 21, 30) nanocolumnar thin films are fabricated by glancing angle deposition (GLAD) at room temperature using Ti73Ta27 and Ta sputter targets. Crystal structure, morphology and microstructure of the nanostructured thin films are systematically investigated by XRD, SEM and TEM, respectively. Nanocolumns of ˜150-160 nm in width are oriented perpendicular to the substrate for both Ti79Ta21 and Ti70Ta30 compositions. The disordered α″ martensite phase with orthorhombic structure is formed in room temperature as-deposited thin films. The columns are found to be elongated small single crystals which are aligned perpendicular to the (20\\bar{4}) and (204) planes of α″ martensite, indicating that the films’ growth orientation is mainly dominated by these crystallographic planes. Laser pre-patterned substrates are utilized to obtain periodic nanocolumnar arrays. The differences in seed pattern, and inter-seed distances lead to growth of multi-level porous nanostructures. Using a unique sputter deposition geometry consisting of Ti73Ta27 and Ta sputter sources, a nanocolumnar Ti-Ta materials library was fabricated on a static substrate by a co-deposition process (combinatorial-GLAD approach). In this library, a composition spread developed between Ti72.8Ta27.2 and Ti64.4Ta35.6, as confirmed by high-throughput EDX analysis. The morphology over the materials library varies from well-isolated nanocolumns to fan-like nanocolumnar structures. The influence of two sputter sources is investigated by studying the resulting column angle on the materials library. The presented nanostructuring methods including the use of the GLAD technique along with pre-patterning and a

Development of an inductively coupled impulse sputtering source for coating deposition

NASA Astrophysics Data System (ADS)

Loch, Daniel Alexander Llewellyn

In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

2016-05-01

Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

Application of ESCA to the determination of stoichiometry in sputtered coatings and interface regions

NASA Technical Reports Server (NTRS)

Wheeler, D. R.

1978-01-01

X-ray photoelectron spectroscopy was used to characterize radiofrequency sputter deposited films of several refractory compounds. Both the bulk film properties such as purity and stoichiometry and the character of the interfacial region between the film and substrate were examined. The materials were CrB2, MoS2, Mo2C, and Mo2B5 deposited on 440C steel. It was found that oxygen from the sputtering target was the primary impurity in all cases. Biasing improves the film purity. The effect of biasing on film stoichiometry is different for each compound. Comparison of the interfacial composition with friction data suggests that adhesion of these films is improved if a region of mixed film and iron oxides can be formed.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Contributions of solar-wind induced potential sputtering to the lunar surface erosion rate and it's exosphere

NASA Astrophysics Data System (ADS)

Alnussirat, S. T.; Barghouty, A. F.; Edmunson, J. E.; Sabra, M. S.; Rickman, D. L.

2018-04-01

Sputtering of lunar regolith by solar-wind protons and heavy ions with kinetic energies of about 1 keV/amu is an important erosive process that affects the lunar surface and exosphere. It plays an important role in changing the chemical composition and thickness of the surface layer, and in introducing material into the exosphere. Kinetic sputtering is well modeled and understood, but understanding of mechanisms of potential sputtering has lagged behind. In this study we differentiate the contributions of potential sputtering from the standard (kinetic) sputtering in changing the chemical composition and erosion rate of the lunar surface. Also we study the contribution of potential sputtering in developing the lunar exosphere. Our results show that potential sputtering enhances the total characteristic sputtering erosion rate by about 44%, and reduces sputtering time scales by the same amount. Potential sputtering also introduces more material into the lunar exosphere.

Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

NASA Astrophysics Data System (ADS)

Hecimovic, Ante

2012-10-01

High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

Using the Multipole Resonance Probe to Stabilize the Electron Density During a Reactive Sputter Process

NASA Astrophysics Data System (ADS)

Oberberg, Moritz; Styrnoll, Tim; Ries, Stefan; Bienholz, Stefan; Awakowicz, Peter

2015-09-01

Reactive sputter processes are used for the deposition of hard, wear-resistant and non-corrosive ceramic layers such as aluminum oxide (Al2O3) . A well known problem is target poisoning at high reactive gas flows, which results from the reaction of the reactive gas with the metal target. Consequently, the sputter rate decreases and secondary electron emission increases. Both parameters show a non-linear hysteresis behavior as a function of the reactive gas flow and this leads to process instabilities. This work presents a new control method of Al2O3 deposition in a multiple frequency CCP (MFCCP) based on plasma parameters. Until today, process controls use parameters such as spectral line intensities of sputtered metal as an indicator for the sputter rate. A coupling between plasma and substrate is not considered. The control system in this work uses a new plasma diagnostic method: The multipole resonance probe (MRP) measures plasma parameters such as electron density by analyzing a typical resonance frequency of the system response. This concept combines target processes and plasma effects and directly controls the sputter source instead of the resulting target parameters.

Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrasonis, G.; Gago, R.; Jimenez, I.

2005-10-01

Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas.more » The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.« less

Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

2017-03-01

Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

Characterization of high power impulse magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Hala, Matej

Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

CIGS thin film solar cell prepared by reactive co-sputtering

NASA Astrophysics Data System (ADS)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE PAGES

Gaowei, M.; Ding, Z.; Schubert, S.; ...

2017-11-10

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaowei, M.; Ding, Z.; Schubert, S.

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Modeling of beryllium sputtering and re-deposition in fusion reactor plasma facing components

NASA Astrophysics Data System (ADS)

Zimin, A. M.; Danelyan, L. S.; Elistratov, N. G.; Gureev, V. M.; Guseva, M. I.; Kolbasov, B. N.; Kulikauskas, V. S.; Stolyarova, V. G.; Vasiliev, N. N.; Zatekin, V. V.

2004-08-01

Quantitative characteristics of Be-sputtering by hydrogen isotope ions in a magnetron sputtering system, the microstructure and composition of the sputtered and re-deposited layers were studied. The energies of H + and D + ions varied from 200 to 300 eV. The ion flux density was ˜3 × 10 21 m -2 s -1. The irradiation doses were up to 4 × 10 25 m -2. For modeling of the sputtered Be-atom re-deposition at increased deuterium pressures (up to 0.07 torr), a mode of operation with their effective return to the Be-target surface was implemented. An atomic ratio O/Be ≅ 0.8 was measured in the re-deposited layers. A ratio D/Be decreases from 0.15 at 375 K to 0.05 at 575 K and slightly grows in the presence of carbon and tungsten. The oxygen concentration in the sputtered layers does not exceed 3 at.%. The atomic ratio D/Be decreases there from 0.07 to 0.03 at target temperatures increase from 350 to 420 K.

Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

NASA Astrophysics Data System (ADS)

Fortier, Jean-Philippe

objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the

Copper deposition on fabrics by rf plasma sputtering for medical applications

NASA Astrophysics Data System (ADS)

Segura, G.; Guzmán, P.; Zuñiga, P.; Chaves, S.; Barrantes, Y.; Navarro, G.; Asenjo, J.; Guadamuz Vargas, S., VI; Chaves, J.

2015-03-01

The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10-2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms.

Sputtering Erosion in Ion and Plasma Thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1996-01-01

Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

Preparation and study of Titanium Nitride films by reactive sputtering and an investigation of target poisoning during the process

NASA Astrophysics Data System (ADS)

Aziz, Tareque; Rumaiz, Abdul

Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.

Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

NASA Astrophysics Data System (ADS)

Delahoy, A. E.; Guo, S. Y.

2005-07-01

Highly transparent and conductive In2O3 and ZnO films containing different doping elements such as Ti, Mo, Zr, Nb, Ta, W (for In2O3), and B (for ZnO) have been prepared by reactive-environment, hollow cathode sputtering (RE-HCS). The use of Nb and W as effective dopants is reported for the first time. Metallic targets were used exclusively, and the dopant concentration was easily controlled using a second sputtering power supply. As a result of the cathode and gas flow geometry, the sputtering is conducted in metal mode, and the target and doping materials are free from oxidation during the deposition process. Film resistivities achieved with the various dopants are reported. For In2O3:Mo (IMO), a resistivity of 1.6×10-4Ω cm and a mobility of 80 cm2/Vs were achieved for Mo concentrations in the range 0.5-5.0% as measured by inductively coupled plasma (ICP). X-ray photoelectron spectroscopy (XPS) analysis indicates Mo with a +6 valence state and that the film is stoichiometric. For In2O3:Ti (ITiO), a superior optical transmission is achieved relative to IMO, while carrier mobility and conductivity were similar. Remarkably, semitransparent films of InN:O having sheet resistances of 9.5 Ω/square have also been prepared. ZnO:B films deposited by RE-HCS exhibit superior optical properties relative to ZnO:Al, and when applied as a window layer to CIGS solar cells yield higher quantum efficiencies.

Secondary ion formation during electronic and nuclear sputtering of germanium

NASA Astrophysics Data System (ADS)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Whiskers, cones and pyramids created in sputtering by ion bombardment

NASA Technical Reports Server (NTRS)

Wehner, G. K.

1979-01-01

A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.

The effects of changing deposition conditions on the similarity of sputter-deposited fluorocarbon thin films to bulk PTFE

NASA Astrophysics Data System (ADS)

Zandona, Philip

Solid lubrication of space-borne mechanical components is essential to their survival and the continued human exploration of space. Recent discoveries have shown that PTFE when blended with alumina nanofillers exhibits greatly improved physical performance properties, with wear rates being reduced by several orders of magnitude. The bulk processes used to produce the PTFE-alumina blends are limiting. Co-sputter deposition of PTFE and a filler material overcomes several of these limitations by enabling the reduction of particle size to the atomic level and also by allowing for the even coating of the solid lubricant on relatively large areas and components. The goal of this study was to establish a baseline performance of the sputtered PTFE films as compared to the bulk material, and to establish deposition conditions that would result in the most bulk-like film possible. In order to coax change in the structure of the sputtered films, sputtering power and deposition temperature were increased independently. Further, post-deposition annealing was applied to half of the deposited film in an attempt to affect change in the film structure. Complications in the characterization process due to increasing film thickness were also examined. Bulk-like metrics for characterization processes the included Fourier transform infrared spectroscopy (FTIR), X-ray spectroscopy (XPS), nanoindentation via atomic force microscopy, and contact angle of water on surface measurements were established. The results of the study revealed that increasing sputtering power and deposition temperature resulted in an increase in the similarity between the fluorocarbon films and the bulk PTFE, at a cost of affecting the potential of the film thicknesses, either by affecting the deposition process directly, or by decreasing the longevity of the sputtering targets.

Nanopatterning of optical surfaces during low-energy ion beam sputtering

NASA Astrophysics Data System (ADS)

Liao, Wenlin; Dai, Yifan; Xie, Xuhui

2014-06-01

Ion beam figuring (IBF) provides a highly deterministic method for high-precision optical surface fabrication, whereas ion-induced microscopic morphology evolution would occur on surfaces. Consequently, the fabrication specification for surface smoothness must be seriously considered during the IBF process. In this work, low-energy ion nanopatterning of our frequently used optical material surfaces is investigated to discuss the manufacturability of an ultrasmooth surface. The research results indicate that ion beam sputtering (IBS) can directly smooth some amorphous or amorphizable material surfaces, such as fused silica, Si, and ULE under appropriate processing conditions. However, for IBS of a Zerodur surface, preferential sputtering together with curvature-dependent sputtering overcome ion-induced smoothing mechanisms, leading to the granular nanopatterns' formation and the coarsening of the surface. Furthermore, the material property difference at microscopic scales and the continuous impurity incorporation would affect the ion beam smoothing of optical surfaces. Overall, IBS can be used as a promising technique for ultrasmooth surface fabrication, which strongly depends on processing conditions and material characters.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

NASA Astrophysics Data System (ADS)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Solutions for discharge chamber sputtering and anode deposit spalling in small mercury ion thrusters

NASA Technical Reports Server (NTRS)

Power, J. L.; Hiznay, D. J.

1975-01-01

Proposed solutions to the problems of sputter erosion and sputtered material spalling in the discharge chamber of small mercury ion thrusters are presented. The accelerated life test evaluated three such proposed solutions: (1) the use of tantalum as a single low sputter yield material for the exposed surfaces of the discharge chamber components subject to sputtering, (2) the use of a severely roughened anode surface to improve the adhesion of the sputter-deposited coating, and (3) the use of a wire cloth anode surface in order to limit the size of any coating flakes which might spall from it. Because of the promising results obtained in the accelerated life test with anode surfaces roughened by grit-blasting, experiments were carried out to optimize the grit-blasting procedure. The experimental results and an optimal grit-blasting procedure are presented.

Energy spectrum of sputtered uranium

NASA Technical Reports Server (NTRS)

Weller, R. A.; Tombrello, T. A.

1977-01-01

The fission track technique for detecting uranium 235 was used in conjunction with a mechanical time-of-flight spectrometer to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E to the -1.77 power for E is approximately greater than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the ramdom collision cascade model of sputtering.

Matrix Sputtering Method: A Novel Physical Approach for Photoluminescent Noble Metal Nanoclusters.

PubMed

Ishida, Yohei; Corpuz, Ryan D; Yonezawa, Tetsu

2017-12-19

Noble metal nanoclusters are believed to be the transition between single metal atoms, which show distinct optical properties, and metal nanoparticles, which show characteristic plasmon absorbance. The interesting properties of these materials emerge when the particle size is well below 2 nm, such as photoluminescence, which has potential application particularly in biomedical fields. These photoluminescent ultrasmall nanoclusters are typically produced by chemical reduction, which limits their practical application because of the inherent toxicity of the reagents used in this method. Thus, alternative strategies are sought, particularly in terms of physical approaches, which are known as "greener alternatives," to produce high-purity materials at high yields. Thus, a new approach using the sputtering technique was developed. This method was initially used to produce thin films using solid substrates; now it can be applied even with liquid substrates such as ionic liquids or polyethylene glycol as long as these liquids have a low vapor pressure. This revolutionary development has opened up new areas of research, particularly for the synthesis of colloidal nanoparticles with dimensions below 10 nm. We are among the first to apply the sputtering technique to the physical synthesis of photoluminescent noble metal nanoclusters. Although typical sputtering systems have relied on the effect of surface composition and viscosity of the liquid matrix on controlling particle diameters, which only resulted in diameters ca. 3-10 nm, that were all plasmonic, our new approach introduced thiol molecules as stabilizers inspired from chemical methods. In the chemical syntheses of metal nanoparticles, controlling the concentration ratio between metal ions and stabilizing reagents is a possible means of systematic size control. However, it was not clear whether this would be applicable in a sputtering system. Our latest results showed that we were able to generically produce a

Sputtering phenomena of discharge chamber components in a 30-cm diameter Hg ion thruster

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.; Rawlin, V. K.

1976-01-01

Sputtering and deposition rates were measured for discharge chamber components of a 30-cm diameter mercury ion thruster. It was found that sputtering rates of the screen grid and cathode baffle were strongly affected by geometry of the baffle holder. Sputtering rates of the baffle and screen grid were reduced to 80 and 125 A/hr, respectively, by combination of appropriate geometry and materials selections. Sputtering rates such as these are commensurate with thruster lifetimes of 15,000 hours or more. A semiempirical sputtering model showed good agreement with the measured values.

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

Structure, mechanical and tribological properties of TiSiC films deposited by magnetron sputtering segment target

NASA Astrophysics Data System (ADS)

Jiang, Jinlong; He, Kaichen; He, XingXing; Huang, Hao; Pang, Xianjuan; Wei, Zhiqiang

2017-12-01

In this work, the TiSiC films were deposited by magnetron sputtering segment target with various areal ratio of Ti80Si20 to C. The effects of segment target component on the structure, mechanical and tribological properties of the films were investigated. The results revealed that the deposited films exhibited a structural transform from a cubic TiC structure to a nanocomposite structure with nanocrystalline TiC in a-C:Si matrix, and finally x-ray amorphous structures with decreasing areal ratio of Ti80Si20 to C. The TiSiC film deposited at the Ti80Si20:C areal ratio of 7:7 showed superior mechanical and tribological properties such as high hardness (18.6 Gpa), good scratch resistant (46 N), low friction coefficient (0.2) and low wear rate (8.6  ×  10-7 mm3 Nm-1), which suggests that it is a promising candidate for the protective films.

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

High performance ZnO:Al films deposited on PET substrates using facing target sputtering

NASA Astrophysics Data System (ADS)

Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

2013-10-01

ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

Rarefaction windows in a high-power impulse magnetron sputtering plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos

2013-09-21

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point outmore » on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)« less

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Sputtering and ion plating

NASA Technical Reports Server (NTRS)

1972-01-01

The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-09-01

Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Electrostatic particle trap for ion beam sputter deposition

DOEpatents

Vernon, Stephen P.; Burkhart, Scott C.

2002-01-01

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

Surface and material analytics based on Dresden-EBIS platform technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, M., E-mail: mike.schmidt@dreebit.com; König, J., E-mail: mike.schmidt@dreebit.com; Bischoff, L.

2015-01-09

Nowadays widely used mass spectrometry systems utilize energetic ions hitting a sample and sputter material from the surface of a specimen. The generated secondary ions are separated and detected with high mass resolution to determine the target materials constitution. Based on this principle, we present an alternative approach implementing a compact Electron Beam Ion Source (EBIS) in combination with a Liquid Metal Ion Source (LMIS). An LMIS can deliver heavy elements which generate high sputter yields on a target surface. More than 90% of this sputtered material consists of mono- and polyatomic neutrals. These particles are able to penetrate themore » magnetic field of an EBIS and they will be ionized within the electron beam. A broad spectrum of singly up to highly charged ions can be extracted depending on the operation conditions. Polyatomic ions will decay during the charge-up process. A standard bending magnet or a Wien filter is used to separate the different ion species due to their mass-to-charge ratio. Using different charge states of ions as it is common with EBIS it is also possible to resolve interfering charge-to-mass ratios of only singly charged ions. Different setups for the realization of feeding the electron beam with sputtered atoms of solids will be presented and discussed. As an example the analysis of a copper surface is used to show high-resolution spectra with low background noise. Individual copper isotopes and clusters with different isotope compositions can be resolved at equal atomic numbers. These results are a first step for the development of a new compact low-cost and high-resolution mass spectrometry system. In a more general context, the described technique demonstrates an efficient method for feeding an EBIS with atoms of nearly all solid elements from various solid target materials. The new straightforward design of the presented setup should be of high interest for a broad range of applications in materials research as well

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

NASA Astrophysics Data System (ADS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

An experimental investigation of fractionation by sputter deposition. [application to solar wind irradiation of lunar soil

NASA Technical Reports Server (NTRS)

Paruso, D. M.; Cassidy, W. A.; Hapke, B. W.

1978-01-01

Artificial glass targets composed of elements varying widely in atomic weight were irradiated at an angle of incidence of 45 deg by 2-keV hydrogen ions at a current density of .33 mA/sq cm, and sputtered atoms were caught on a molybdenum film. Analyses of the sputter-deposited films and unsputtered target glasses were carried out by electron microprobe. The backward-sputtered component was found to be enriched in elements of low atomic weight, while the forward-sputtered component was enriched in heavy atoms. These results indicate that at the lunar surface lighter elements and isotopes would tend to be ejected in backward directions, escaping directly through the openings which admit bombarding ions without first striking an adjacent grain surface; heavy elements and isotopes would be forward-sputtered deeper into the soil and be preferentially retained, contributing to the reported enrichments of heavy elements and isotopes. Additional results show that the binding energy of an element in its oxide form influences the sticking coefficient of a sputtered atom; elements of low binding energy are likely to desorb, while elements of high binding energy tend to stick to the first bounce surface.

The first laboratory measurements of sulfur ions sputtering water ice

NASA Astrophysics Data System (ADS)

Galli, André; Pommerol, Antoine; Vorburger, Audrey; Wurz, Peter; Tulej, Marek; Scheer, Jürgen; Thomas, Nicolas; Wieser, Martin; Barabash, Stas

2015-04-01

The upcoming JUpiter ICy moons Explorer mission to Europa, Ganymede, and Callisto has renewed the interest in the interaction of plasma with an icy surface. In particular, the surface release processes on which exosphere models of icy moons rely should be tested with realistic laboratory experiments. We therefore use an existing laboratory facility for space hardware calibration in vacuum to measure the sputtering of water ice due to hydrogen, oxygen, and sulfur ions at energies from 1 keV to 100 keV. Pressure and temperature are comparable to surface conditions encountered on Jupiter's icy moons. The sputter target is a 1cm deep layer of porous, salty water ice. Our results confirm theoretical predictions that the sputter yield from oxygen and sulfur ions should be similar. Thanks to the modular set-up of our experiment we can add further surface processes relevant for icy moons, such as electron sputtering, sublimation, and photodesorption due to UV light.

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

NASA Astrophysics Data System (ADS)

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

2016-06-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrantoni, M.; Rossi, C.; Salvagnac, L.

2010-10-15

Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon-oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (<50 MPa) multilayered nanoenergetic material, each layer being in the range of tens nanometer to one micron. The reaction temperature and heat of reaction were measured using differential scanning calorimetry and thermal analysis to compare nanostructured layered materials to microstructured materials. For the nanostructured multilayers, all the energy is released before the Al melting point. In the case ofmore » the microstructured samples at least 2/3 of the energy is released at higher temperatures, between 1036 and 1356 K.« less

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

PubMed Central

Wang, Qun; Jin, Xin

2018-01-01

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency. PMID:29562603

An experiment on the dynamics of ion implantation and sputtering of surfaces

NASA Astrophysics Data System (ADS)

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

An experiment on the dynamics of ion implantation and sputtering of surfaces.

PubMed

Wright, G M; Barnard, H A; Kesler, L A; Peterson, E E; Stahle, P W; Sullivan, R M; Whyte, D G; Woller, K B

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

Ion beam sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1976-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

Ion-beam-sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1977-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

Magnetron sputtered boron films for increasing hardness of a metal surface

DOEpatents

Makowiecki, Daniel M [Livermore, CA; Jankowski, Alan F [Livermore, CA

2003-05-27

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

NASA Astrophysics Data System (ADS)

Vilcot, J.-P.; Ayachi, B.; Aviles, T.; Miska, P.

2017-11-01

In the first part of this paper, we will show that a sputtering-based fabrication process exhibiting a low environmental footprint has been developed for the fabrication of copper indium gallium selenide (CIGS) absorbing material. Its originality lies in using room temperature sputtering in a pulsed—direct current mode of a single quaternary target followed by a post-anneal. At any stage of the process, selenium or sulfur atmosphere is used. Inert gas is used, respectively argon and a forming gas, for the deposition and annealing step, respectively. CIGS cells have been fabricated using such an absorbing layer. They exhibit an efficiency close to 12%. A tandem cell approach, using a thin film technology in conjunction with the well-established Si technology, is a promising technique, achieving cells with 30%, and higher, efficiency. Such cells are awaited, jointly with a stronger implementation of low environmental footprint technologies, as a vision for 2030. In the first section, sputtering technique has shown its ability to be developed in such a way achieving an environmentally friendly process that can be moreover compatible to be co-integrated with, for example, Si technology. In a second section, we will present a prospective discussion on the materials that can be applied to produce a sustainable approach for such a tandem cell configuration.

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1986-01-01

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Solar Wind sputtering from the surface of Comet Churyumov-Gerasimenko

NASA Astrophysics Data System (ADS)

Wurz, Peter; Rubin, Martin; Altwegg, Kathrin; Balsiger, Hans; Gasc, Sébastien; Galli, André; Jäckel, Annette; Le Roy, Lena; Calmonte, Ursina; Tzou, Chia-Yu; Mall, Urs; Korth, Axel; Fiethe, Björn; De Keyser, Johan; Berthelier, Jean-Jacques; Rème, Henri; Gombosi, Tamas; Fuselier, Steven

2015-04-01

While the European Space Agency's Rosetta spacecraft is orbiting close to the comet 67P/Churyumov-Gerasimenko (67P/C-G) we performed continuous measurements of the chemical inventory of its coma with the the Rosetta Orbiter Spectrometer for Ion and Neutral Analysis (ROSINA) instrument suite. ROSINA consists of two mass spectrometers, the Double Focusing Mass Spectrometer (DFMS) and the Reflectron-type Time-Of-Flight (RTOF), as well as the COmet Pressure Sensor (COPS). Most of the observed species in the coma are volatile material that are released from the comet's surface by sublimation, for example H2O, CO, CO2 and many others. The number densities in the coma of these species show temporary variation compatible with the solar illumination (diurnal cycle), with seasonal variation (summer and winter hemispheres), and with compositional heterogeneity of the surface. We can trace back the measurements of the observed species to the cometary surface to create maps of their probable origin on the surface. In addition to the volatile material we detected atoms of Na, K, Si, S, and some more, which cannot or only partially be set free via sublimation. Again, we project these measurements down onto the surface of the comet. These maps for the sputtered atoms differ significantly from the maps for volatile species, like the water map, in some cases they are almost the opposite. Our present understanding is that these atoms are the result of solar wind sputtering of refractory material, i.e., of dust located on the cometary surface. Since the release of material from the surface by sputtering is almost stoichiometric we can infer the chemical composition of major elements for the areas affected by sputtering and the average mineralogy of these locations can be derived. The sputter signal will disappear with the comet getting closer to the Sun and becomes more active. Once the coma is dense enough, the solar wind will be absorbed by the gas layer above the surface and will

Molecular dynamics investigation of hexagonal boron nitride sputtering and sputtered particle characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Brandon D., E-mail: bradenis@umich.edu; Boyd, Iain D.

The sputtering of hexagonal boron nitride (h-BN) by impacts of energetic xenon ions is investigated using a molecular dynamics (MD) model. The model is implemented within an open-source MD framework that utilizes graphics processing units to accelerate its calculations, allowing the sputtering process to be studied in much greater detail than has been feasible in the past. Integrated sputter yields are computed over a range of ion energies from 20 eV to 300 eV, and incidence angles from 0° to 75°. Sputtering of boron is shown to occur at energies as low as 40 eV at normal incidence, and sputtering of nitrogen atmore » as low as 30 eV at normal incidence, suggesting a threshold energy between 20 eV and 40 eV. The sputter yields at 0° incidence are compared to existing experimental data and are shown to agree well over the range of ion energies investigated. The semi-empirical Bohdansky curve and an empirical exponential function are fit to the data at normal incidence, and the threshold energy for sputtering is calculated from the Bohdansky curve fit as 35 ± 2 eV. These results are shown to compare well with experimental observations that the threshold energy lies between 20 eV and 40 eV. It is demonstrated that h-BN sputters predominantly as atomic boron and diatomic nitrogen, and the velocity distribution function (VDF) of sputtered boron atoms is investigated. The calculated VDFs are found to reproduce the Sigmund-Thompson distribution predicted by Sigmund's linear cascade theory of sputtering. The average surface binding energy computed from Sigmund-Thompson curve fits is found to be 4.5 eV for ion energies of 100 eV and greater. This compares well to the value of 4.8 eV determined from independent experiments.« less

On the sputter alteration of regoliths of outer solar system bodies

NASA Technical Reports Server (NTRS)

Hapke, B.

1986-01-01

The present theoretical and experimental consideration of processes that are expected to occur when the porous regoliths on outer solar system bodies lacking atmospheres are subjected to energetic ion bombardment indicates that porosity reduces the effective sputtering yield of a soil by more than an order of magnitude. Between 90 and 97 percent of the sputtered atoms are trapped within the regolith and subjected to differential desorption fractionation, which emerges as the most important path for the alteration of chemical and optical properties in sputtered regoliths. Sputtered porous mixtures of water, ammonia and methane frosts suffer a loss of H, and surface reactions of C, N, and O that should yield complex hydrocarbons and carbohydrates; such reactions may have played a role in the formation of carbonaceous chondrites' matrix material prior to agglomeration.

Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, Fred W; Harris, Peter R; Taylor, C. N.

2011-01-01

We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have highermore » physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.« less

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

NASA Astrophysics Data System (ADS)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

NASA Astrophysics Data System (ADS)

Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

2015-04-01

The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

On Both Spatial And Velocity Distribution Of Sputtered Particles In Magnetron Discharge

NASA Astrophysics Data System (ADS)

Vitelaru, C.; Pohoata, V.; Tiron, V.; Costin, C.; Popa, G.

2012-12-01

The kinetics of the sputtered atoms from the metallic target as well as the time-space distribution of the argon metastable atoms have been investigated for DC and high power pulse magnetron discharge by means of Tunable Diode - Laser Absorption Spectroscopy (TD-LAS) and Tunable Diode - Laser Induced Fluorescence (TD-LIF). The discharge was operated in argon (5-30 mTorr) with two different targets, tungsten and aluminum, for pulses of 1 to 20 μs, at frequencies of 0.2 to 1 kHz. Peak current intensity of ~100 A has been attained at cathode peak voltage of ~1 kV. The mean velocity distribution functions and particle fluxes of the sputtered metal atoms, in parallel and perpendicular direction to the target, have been obtained and compared for DC and pulse mode.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malobabic, Sina; Jupe, Marco; Ristau, Detlev

Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-04-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-06-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.

2015-11-15

This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasmamore » in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.« less

X-ray photoelectron spectroscopy study of radiofrequency sputtered chromium bromide, molybdenum disilicide, and molybdenum disulfide coatings and their friction properties

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1977-01-01

Radiofrequency sputtered coatings of CRB2, MOSI2, and MOS2 were examined by X-ray photoelectron spectroscopy. The effects of sputtering target history, deposition time, RF power level, and substrate bias on film composition were studied. Friction tests were run on RF sputtered surfaces of 440-C steel to correlate XPS data with lubricating properties. Significant deviations from stoichiometry and high oxide levels for all three compounds were related to target outgassing. The effect of biasing on these two factors depended on the compound. Improved stoichiometry correlated well with good friction and wear properties.

Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dildar, I. M.; Neklyudova, M.; Xu, Q.

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter windowmore » exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.« less

Effect of post-annealing on sputtered MoS2 films

NASA Astrophysics Data System (ADS)

Wong, W. C.; Ng, S. M.; Wong, H. F.; Cheng, W. F.; Mak, C. L.; Leung, C. W.

2017-12-01

Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.

Features of nanostructures sputtering

NASA Astrophysics Data System (ADS)

Kapustin, S. N.; Matveev, V. I.; Eseev, M. K.

2017-09-01

The research of ion sputtering of nanoparticles is interesting both from the fundamental point of view - for researching the interior structure of nanoobjects, and the economical one - nanostructures often play the role of functional supplements in composite materials under the radiation pressure. This process should be taken into account while creating objects decorated by nanoclusters during ion implantation. Polyatomic clusters obtained as a result of ion bombing could be used as nanodisperse catalysts or quantum points.

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

NASA Astrophysics Data System (ADS)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

NASA Astrophysics Data System (ADS)

Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

2017-11-01

Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

Differential Sputtering Behavior of Pyrolytic Graphite and Carbon-Carbon Composite Under Xenon Bombardment

NASA Technical Reports Server (NTRS)

Williams, John D.; Johnson, Mark L.; Williams, Desiree D.

2003-01-01

A differential sputter yield measurement technique is described, which consists of a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. This apparatus has been used to characterize the sputtering behavior of various forms of carbon including polycrystalline graphite, pyrolytic graphite, and PVD-infiltrated and pyrolized carbon-carbon composites. Sputter yield data are presented for pyrolytic graphite and carbon-carbon composite over a range of xenon ion energies from 200 eV to 1 keV and angles of incidence from 0 deg (normal incidence) to 60 deg .

Developing an in-situ Detector of Neutron-Induced Fission for Actinide Sputtering Characterization

NASA Astrophysics Data System (ADS)

Fellers, Deion

2016-09-01

The physical mechanism describing the transfer of large amounts of energy due to fission in a material is not well understood and represents one of the modern challenges facing nuclear scientists, with applications including nuclear energy and national defense. Fission fragments cause damage to the material from sputtering of matter as they pass through or near the material's surface. We have developed a new technique at the Los Alamos Neutron Science Center for characterizing the ejecta by using ultracold neutrons (neutrons with kinetic energy less than 300 neV) to induce fission at finely controlled depths in an actinide. This program will ultimately provide a detailed description of the properties of the sputtered particles as a function of the depth of the fission in the material. A key component of this project is accurately quantifying the number of neutron induced fissions in the sample. This poster depicts the development of an in-situ detector of neutron-induced fission for the AShES (Actinide Sputtering from ultracold neutron Exposure at the Surface) experiment.

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

NASA Astrophysics Data System (ADS)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Actinide Sputtering Induced by Fission with Ultra-cold Neutrons

NASA Astrophysics Data System (ADS)

Venuti, Michael; Shi, Tan; Fellers, Deion; Morris, Christopher; Makela, Mark

2017-09-01

Understanding the effects of actinide sputtering due to nuclear fission is important for a wide range of applications, including nuclear fuel storage, space science, and national defense. A new program at the Los Alamos Neutron Science Center uses ultracold neutrons (UCN) to induce fission in actinides such as uranium and plutonium. By controlling the energy of UCN, it is possible to induce fission at the sample surface within a well-defined depth. It is therefore an ideal tool for studying the effects of fission-induced sputtering as a function of interaction depth. Since the mechanism for fission-induced surface damage is not well understood, especially for samples with a surface oxide layer, this work has the potential to separate the various damage mechanisms proposed in previous works. During the irradiation with UCN, fission events are monitored by coincidence counting between prompt gamma rays using NaI detectors. Alpha spectroscopy of the ejected actinide material is performed in a custom-built ionization chamber to determine the amount of sputtered material. Actinide samples with various sample properties and surface conditions are irradiated and analyzed. In this presentation, we will discuss our experimental setup and present the preliminary results.

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be

Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C; Gilmer, G; Zepeda-Ruiz, L

2007-05-04

The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, wemore » have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.« less

The Investigation Of Carbon Contamination And Sputtering Effects Of Xenon Ion Thrusters

NASA Technical Reports Server (NTRS)

Prak, Moline K.

2004-01-01

parameters of the actual shadow shields, I created replicas of three types of shadow shielding to be used to undergo testing. It will be placed in a machine that produces carbon atoms at a high temperature of 200 C. or beam is aimed at a targeted material. As a result of this collision, atoms and other particles are ejected out of the target surface. Another part of my internship consisted of research on sputter ejection, or the angle distribution of sputtered material. This research entailed finding the past results of sputter ejection investigation as well as creating another type of mock simulation. Other minor projects include calculating the path of Xe(+) gas through the insulating beads of the isolators and assisting my mentor in collecting data for his paper for the Joint Propulsion Conference & Exhibit to be held July 11-14,2004 in Fort Lauderdale, Florida.

Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators.

PubMed

Olivares, Jimena; Wegmann, Enrique; Capilla, José; Iborra, Enrique; Clement, Marta; Vergara, Lucía; Aigner, Robert

2010-01-01

In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator.

Synthesis of ZnO:As Films Using Off-Axis Sputtering Deposition

NASA Technical Reports Server (NTRS)

Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

2001-01-01

As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.

High rate DC-reactive sputter deposition of Y 2O 3 film on the textured metal substrate for the superconducting coated conductor

NASA Astrophysics Data System (ADS)

Kim, Ho-Sup; Park, Chan; Ko, Rock-Kil; Shi, Dongqui; Chung, Jun-Ki; Ha, Hong-Soo; Park, Yu-Mi; Song, Kyu-Jeong; Youm, Do-Jun

2005-10-01

Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77 K, self field), and Jc (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm2, respectively.

Are the argon metastables important in high power impulse magnetron sputtering discharges?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gudmundsson, J. T., E-mail: tumi@hi.is; Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik; Lundin, D.

2015-11-15

We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization ismore » always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.« less

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Industrial potential, uses, and performance of sputtered and ion plated films

NASA Technical Reports Server (NTRS)

Spalvins, T.

1979-01-01

The sputtering and ion plating technology is reviewed in terms of their potential, uses and performance. It offers the greatest flexibility in coating preparation, since coatings can be tailored in any preferred chemical combination, and graded type interfaces (ceramic to metal seals) can be formed. Sputtered and ion plated film characteristics such as the degree of adherence, coherence and morphological growth which contribute to film performance and reliability are described and illustrated as used in practice. It is concluded that the potential future of sputtered and ion plated films for industrial applications will depend primarily upon greater comprehension of materials selection, possible elimination of restrictions for coating/substrate combinations and the awareness of utilizing the proper deposition parameters.

High power impulse magnetron sputtering and its applications

NASA Astrophysics Data System (ADS)

Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

2018-04-01

High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

NASA Technical Reports Server (NTRS)

Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

2014-01-01

New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

Characterization of Gold-Sputtered Zinc Oxide Nanorods-a Potential Hybrid Material.

PubMed

Perumal, Veeradasan; Hashim, Uda; Gopinath, Subash C B; Rajintra Prasad, Haarindraprasad; Wei-Wen, Liu; Balakrishnan, S R; Vijayakumar, Thivina; Rahim, Ruslinda Abdul

2016-12-01

Generation of hybrid nanostructures has been attested as a promising approach to develop high-performance sensing substrates. Herein, hybrid zinc oxide (ZnO) nanorod dopants with different gold (Au) thicknesses were grown on silicon wafer and studied for their impact on physical, optical and electrical characteristics. Structural patterns displayed that ZnO crystal lattice is in preferred c-axis orientation and proved the higher purities. Observations under field emission scanning electron microscopy revealed the coverage of ZnO nanorods by Au-spots having diameters in the average ranges of 5-10 nm, as determined under transmission electron microscopy. Impedance spectroscopic analysis of Au-sputtered ZnO nanorods was carried out in the frequency range of 1 to 100 MHz with applied AC amplitude of 1 V RMS. The obtained results showed significant changes in the electrical properties (conductance and dielectric constant) with nanostructures. A clear demonstration with 30-nm thickness of Au-sputtering was apparent to be ideal for downstream applications, due to the lowest variation in resistance value of grain boundary, which has dynamic and superior characteristics.

Simultaneous ion sputter polishing and deposition

NASA Technical Reports Server (NTRS)

Rutledge, S.; Banks, B.; Brdar, M.

1981-01-01

Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

Carbon atom and cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, E.; Doerner, R. P.; Shimada, M.; Tynan, G. R.

2008-08-01

Exit-angle resolved carbon atom and cluster (C2 and C3) sputtering yields are measured during different noble gas (Xe, Kr, Ar, Ne, and He) ion bombardments from a plasma, for low incident energies (75-225 eV). A quadrupole mass spectrometer (QMS) is used to detect the fraction of sputtered neutrals that is ionized in the plasma and to obtain the angular distribution by changing the angle between the target normal and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles in the region between the sample and the QMS. The effective elastic scattering cross sections of C, C2, and C3 with the different bombarding gas neutrals are obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. The total sputtering yield (C+C2+C3) for each bombarding gas is obtained from weight-loss measurements and the sputtering yield for C, C2, and C3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. We observe undercosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases and a clear decrease of the atom to cluster (C2 and C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne, and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Magnetic properties of sputtered Permalloy/molybdenum multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romera, M.; Ciudad, D.; Maicas, M.

2011-10-15

In this work, we report the magnetic properties of sputtered Permalloy (Py: Ni{sub 80}Fe{sub 20})/molybdenum (Mo) multilayer thin films. We show that it is possible to maintain a low coercivity and a high permeability in thick sputtered Py films when reducing the out-of-plane component of the anisotropy by inserting thin film spacers of a non-magnetic material like Mo. For these kind of multilayers, we have found coercivities which are close to those for single layer films with no out-of-plane anisotropy. The coercivity is also dependent on the number of layers exhibiting a minimum value when each single Py layer hasmore » a thickness close to the transition thickness between Neel and Bloch domain walls.« less

Deposition of adherent Ag-Ti duplex films on ceramics in a multiple-cathode sputter deposition system

NASA Technical Reports Server (NTRS)

Honecy, Frank S.

1992-01-01

The adhesion of Ag films deposited on oxide ceramics can be increased by first depositing intermediate films of active metals such as Ti. Such duplex coatings can be fabricated in a widely used three target sputter deposition system. It is shown here that the beneficial effect of the intermediate Ti film can be defeated by commonly used in situ target and substrate sputter cleaning procedures which result in Ag under the Ti. Auger electron spectroscopy and wear testing of the coatings are used to develop a cleaning strategy resulting in an adherent film system.

Sputtering of cobalt and chromium by argon and xenon ions near the threshold energy region

NASA Technical Reports Server (NTRS)

Handoo, A. K.; Ray, P. K.

1993-01-01

Sputtering yields of cobalt and chromium by argon and xenon ions with energies below 50 eV are reported. The targets were electroplated on copper substrates. Measurable sputtering yields were obtained from cobalt with ion energies as low as 10 eV. The ion beams were produced by an ion gun. A radioactive tracer technique was used for the quantitative measurement of the sputtering yield. Co-57 and Cr-51 were used as tracers. The yield-energy curves are observed to be concave, which brings into question the practice of finding threshold energies by linear extrapolation.

Consistent kinetic simulation of plasma and sputtering in low temperature plasmas

NASA Astrophysics Data System (ADS)

Schmidt, Frederik; Trieschmann, Jan; Mussenbrock, Thomas

2016-09-01

Plasmas are commonly used in sputtering applications for the deposition of thin films. Although magnetron sources are a prominent choice, capacitively coupled plasmas have certain advantages (e.g., sputtering of non-conducting and/or ferromagnetic materials, aside of excellent control of the ion energy distribution). In order to understand the collective plasma and sputtering dynamics, a kinetic simulation model is helpful. Particle-in-Cell has been proven to be successful in simulating the plasma dynamics, while the Test-Multi-Particle-Method can be used to describe the sputtered neutral species. In this talk a consistent combination of these methods is presented by consistently coupling the simulated ion flux as input to a neutral particle transport model. The combined model is used to simulate and discuss the spatially dependent densities, fluxes and velocity distributions of all particles. This work is supported by the German Research Foundation (DFG) in the frame of Transregional Collaborative Research Center (SFB) TR-87.

Target materials for exotic ISOL beams

NASA Astrophysics Data System (ADS)

Gottberg, A.

2016-06-01

The demand for intensity, purity, reliability and availability of short-lived isotopes far from stability is steadily high, and considerably exceeding the supply. In many cases the ISOL (Isotope Separation On-Line) method can provide beams of high intensity and purity. Limitations in terms of accessible chemical species and minimum half-life are driven mainly by chemical reactions and physical processes inside of the thick target. A wide range of materials are in use, ranging from thin metallic foils and liquids to refractory ceramics, while poly-phasic mixed uranium carbides have become the reference target material for most ISOL facilities world-wide. Target material research and development is often complex and especially important post-irradiation analyses are hindered by the high intrinsic radiotoxicity of these materials. However, recent achievements have proven that these investigations are possible if the effort of different facilities is combined, leading to the development of new material matrices that can supply new beams of unprecedented intensity and beam current stability.

Carbon Back Sputter Modeling for Hall Thruster Testing

NASA Technical Reports Server (NTRS)

Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John Tamin

2016-01-01

Lifetime requirements for electric propulsion devices, including Hall Effect thrusters, are continually increasing, driven in part by NASA's inclusion of this technology in it's exploration architecture. NASA will demonstrate high-power electric propulsion system on the Solar Electric Propulsion Technology Demonstration Mission (SEP TDM). The Asteroid Redirect Robotic mission is one candidate SEP TDM, which is projected to require tens of thousands of thruster life. As thruster life is increased, for example through the use of improved magnetic field designs, the relative influence of facility effects increases. One such effect is the sputtering and redeposition, or back sputter, of facility materials by the high energy thruster plumes. In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) project, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Center's Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 1 micron/kh in a fully carbon-lined chamber. A more detailed numerical Monte Carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values on the order of 1.5 - 2 micron/kh at 600 V and 12.5 kW.

On the sputter alteration of regoliths of outer solar system bodies

NASA Technical Reports Server (NTRS)

Hapke, Bruce

1987-01-01

Several processes that are expected to occur when the porous regoliths of outer solar system bodies (without atmospheres) are subjected to energetic ion bombardment are discussed. The conclusions reached in much of the literature addressing sputtering are quantitatively or qualitatively incorrect because effects of soil porosity have been neglected. It is shown theoretically and experimentally that porosity reduces the effective sputtering yield of a soil by more than an order of magnitude. Between 90 and 97% of the sputtered atoms are trapped within the regolith, where they are factionated by differential desorption. Experiments indicate that more volatile species have higher desorption probabilities. This process is the most important way in which alteration of chemical and optical properties occurs when a regolith is sputtered. When a basic silicate soil is irradiated these effects lead to sputter-deposited films enriched in metallic iron, while O, Na and K are preferentially lost. The Na and K are present in the atmosphere above the sputtered silicate in quantities much greater than their abundances in the regolith. Icy regoliths of SO2 should be enriched in elemental S and/or S2O. This prediction is supported by the probable identification of S2O and polysulfur oxide bands in the IR spectra of H-sputtered SO2 reported by Moore. When porous mixtures of water, ammonia and methane frosts are sputtered, the loss of H and surface reactions of C, N and O in the deposits should produce complex hydrocarbons and carbohydrates, some of which may be quite dark. Such reactions may have played a role in the formation of the matrix material of carbonaceous chondrites prior to agglomeration.

Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik

2014-07-01

Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{submore » 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.« less

Actinide Sputtering Induced by Fission with Ultra-cold Neutrons

NASA Astrophysics Data System (ADS)

Shi, Tan; Venuti, Michael; Fellers, Deion; Martin, Sean; Morris, Chris; Makela, Mark

2017-09-01

Understanding the effects of actinide sputtering due to nuclear fission is important for a wide range of applications, including nuclear fuel storage, space science, and national defense. A new program at the Los Alamos Neutron Science Center uses ultracold neutrons (UCN) to induce fission in actinides such as uranium and plutonium. By controlling the UCN energy, it is possible to induce fission at the sample surface within a well-defined depth. It is therefore an ideal tool for studying the effects of fission-induced sputtering as a function of interaction depth. Since the mechanism for fission-induced surface damage is not well understood, this work has the potential to deconvolve the various damage mechanisms. During the irradiation with UCN, NaI detectors are used to monitor the fission events and were calibrated by monitoring fission fragments with an organic scintillator. Alpha spectroscopy of the ejected actinide material is performed in an ion chamber to determine the amount of sputtered material. Actinide samples with various sample properties and surface conditions are irradiated and analyzed. In this talk, I will discuss our experimental setup and present the preliminary results from the testing of multiple samples. This work has been supported by Los Alamos National Laboratory and Seaborg Summer Research Fellowship.

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Electronic sputtering of vitreous SiO2: Experimental and modeling results

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Trautmann, C.

2016-07-01

The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.

Measurements and Modelling of Sputtering Rates with Low Energy Ions

NASA Astrophysics Data System (ADS)

Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

1996-10-01

The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

DTIC Science & Technology

2015-03-01

AFRL-RX-WP-JA-2015-0185 MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (POSTPRINT) A. N. Reed...COVERED (From – To) 29 January 2013 – 16 February 2015 4. TITLE AND SUBTITLE MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON...ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates

Self-organization and self-limitation in high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, Andre

The plasma over the racetrack in high power impulse magnetron sputtering develops in traveling ionization zones. Power densities can locally reach 10{sup 9} W/m{sup 2}, which is much higher than usually reported. Ionization zones move because ions are 'evacuated' by the electric field, exposing neutrals to magnetically confined, drifting electrons. Drifting secondary electrons amplify ionization of the same ionization zone where the primary ions came from, while sputtered and outgassing atoms are supplied to the following zone(s). Strong density gradients parallel to the target disrupt electron confinement: a negative feedback mechanism that stabilizes ionization runaway.

Metal-Coated Cenospheres Obtained via Magnetron Sputter Coating: A New Precursor for Syntactic Foams

NASA Astrophysics Data System (ADS)

Shishkin, A.; Hussainova, I.; Kozlov, V.; Lisnanskis, M.; Leroy, P.; Lehmhus, D.

2018-05-01

Syntactic foams (SFs) and metal matrix syntactic foams (MMSFs) represent an advanced type of metal matrix composites (MMCs) based on hollow microspheres as particulate reinforcement. In general, SF and MMSFs allow tailoring of properties through choice of matrix, reinforcement, and volume fraction of the latter. A further handle for property adjustment is surface modification of the reinforcing particles. The present study introduces cenospheres for use as filler material in SF and MMSFs and as lightweight filler with electromagnetic interference shielding properties in civil engineering, which have been surface coated by means of physical vapor deposition, namely vibration-assisted sputter coating using a magnetron sputtering system. Altogether four types of such cenosphere-based composite powders (CPs) with an original particle size range of 50-125 µm (average particle size d50 75 µm) were studied. Surface films deposited on these were composed of Cu, stainless steel, Ti, and Ti-TiN double layers. For Cu coatings, the deposited metal film thickness was shown to be dependent on the sputtering energy. Scanning electron microscope backscattering images revealed nonporous films uniform in thickness directly after sputtering. Film thickness varied between 0.15 µm and 2.5 µm, depending on coating material and sputtering parameters. From these materials, samples were produced without addition of metal powders, exhibiting metal contents as low as 8-10 wt.% based on the coating alone. Obtained samples had an apparent density of 1.1-1.9 g/cm3 and compressive strengths ranging from 22 MPa to 135 MPa.

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

NASA Astrophysics Data System (ADS)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 < x < 0.92) thin films made by radiofrequency (13.56 MHz) cathodic magnetron sputtering from composite Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

NASA Astrophysics Data System (ADS)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1986-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1985-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Energy spectrum of sputtered uranium - A new technique

NASA Technical Reports Server (NTRS)

Weller, R. A.; Tombrello, T. A.

1978-01-01

The fission track technique for detecting U-235 has been used in conjunction with a mechanical time-of-flight spectrometer in order to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E exp -1.77 for E not less than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the random collision cascade model of sputtering.

Molecular dynamics study of Al and Ni 3Al sputtering by Al clusters bombardment

NASA Astrophysics Data System (ADS)

Zhurkin, Eugeni E.; Kolesnikov, Anton S.

2002-06-01

The sputtering of Al and Ni 3Al (1 0 0) surfaces induced by impact of Al ions and Al N clusters ( N=2,4,6,9,13,55) with energies of 100 and 500 eV/atom is studied at atomic scale by means of classical molecular dynamics (MD). The MD code we used implements many-body tight binding potential splined to ZBL at short distances. Special attention has been paid to model dense cascades: we used quite big computation cells with lateral periodic and damped boundary conditions. In addition, long simulation times (10-25 ps) and representative statistics (up to 1000 runs per each case) were considered. The total sputtering yields, energy and time spectrums of sputtered particles, as well as preferential sputtering of compound target were analyzed, both in the linear and non-linear regimes. The significant "cluster enhancement" of sputtering yield was found for cluster sizes N⩾13. In parallel, we estimated collision cascade features depending on cluster size in order to interpret the nature of observed non-linear effects.

Magnetron Sputtered Molybdenum Oxide for Application in Polymers Solar Cells

NASA Astrophysics Data System (ADS)

Sendova-Vassileva, M.; Dikov, Hr; Vitanov, P.; Popkirov, G.; Gergova, R.; Grancharov, G.; Gancheva, V.

2016-10-01

Thin films of molybdenum oxide were deposited by radio frequency (RF) magnetron sputtering in Ar from a MoO3 target at different deposition power on glass and silicon substrates. The thickness of the films was determined by profilometer measurements and by ellipsometry. The films were annealed in air at temperatures between 200 and 400°C in air. The optical transmission and reflection spectra were measured. The conductivity of the as deposited and annealed films was determined. The crystal structure was probed by Raman spectroscopy. The oxidation state of the surface was studied by X-ray photoelectron spectroscopy (XPS) spectroscopy. The deposition technique described above was used to experiment with MoOx as a hole transport layer (HTL) in polymer solar cells with bulk hetrojunction active layer, deposited by spin coating. The performance of these layers was compared with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), which is the standard material used in this role. The measured current-voltage characteristics of solar cells with the structure glass/ITO/HTL/Poly(3-hexyl)thiophene (P3HT):[6,6]-phenyl-C61- butyric acid methyl ester (PCBM)/Al demonstrate that the studied MoOx layer is a good HTL and leads to comparable characteristics to those with PEDOT:PSS. On the other hand the deposition by magnetron sputtering guarantees reliable and repeatable HTLs.

Sputtering and detection of large organic molecules from Europa

NASA Astrophysics Data System (ADS)

Johnson, R. E.; Sundqvist, B. U. R.

2018-07-01

Mass spectroscopy of bio-molecules by heavy ion induced sputtering, which became a practical laboratory procedure, was also suggested as a potential tool for spacecraft studies of targets of interest in astrobiology. With the planning of new missions to Europa, there is renewed interest in the possibility of detecting organic molecules that might have originated in its subsurface ocean and can be sputtered from its surface often intact by impacting energetic heavy ions trapped in Jupiter's magnetosphere. Here we review the laboratory data and modeling bearing on this issue. We then give estimates of the ejection into the gas-phase of trace organic species embedded in an ice matrix on Europa's surface and their possible detection during a flyby mission.

Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca

2015-07-15

A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over themore » whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.« less

Simulations of carbon sputtering in fusion reactor divertor plates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marian, J; Zepeda-Ruiz, L A; Gilmer, G H

2005-10-03

The interaction of edge plasma with material surfaces raises key issues for the viability of the International Thermonuclear Reactor (ITER) and future fusion reactors, including heat-flux limits, net material erosion, and impurity production. After exposure of the graphite divertor plate to the plasma in a fusion device, an amorphous C/H layer forms. This layer contains 20-30 atomic percent D/T bonded to C. Subsequent D/T impingement on this layer produces a variety of hydrocarbons that are sputtered back into the sheath region. We present molecular dynamics (MD) simulations of D/T impacts on amorphous carbon layer as a function of ion energymore » and orientation, using the AIREBO potential. In particular, energies are varied between 10 and 150 eV to transition from chemical to physical sputtering. These results are used to quantify yield, hydrocarbon composition and eventual plasma contamination.« less

Superconductivity in sputtered CuMO6S8

NASA Technical Reports Server (NTRS)

Alterovitz, S.; Woollam, J. A.; Kammerdiner, L.; Luo, H. L.; Martin, C.

1977-01-01

Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

Properties of Ferrite Garnet (Bi, Lu, Y)3(Fe, Ga)5O12 Thin Film Materials Prepared by RF Magnetron Sputtering

PubMed Central

Nur-E-Alam, Mohammad; Belotelov, Vladimir; Alameh, Kamal

2018-01-01

This work is devoted to physical vapor deposition synthesis, and characterisation of bismuth and lutetium-substituted ferrite-garnet thin-film materials for magneto-optic (MO) applications. The properties of garnet thin films sputtered using a target of nominal composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 are studied. By measuring the optical transmission spectra at room temperature, the optical constants and the accurate film thicknesses can be evaluated using Swanepoel’s envelope method. The refractive index data are found to be matching very closely to these derived from Cauchy’s dispersion formula for the entire spectral range between 300 and 2500 nm. The optical absorption coefficient and the extinction coefficient data are studied for both the as-deposited and annealed garnet thin-film samples. A new approach is applied to accurately derive the optical constants data simultaneously with the physical layer thickness, using a combination approach employing custom-built spectrum-fitting software in conjunction with Swanepoel’s envelope method. MO properties, such as specific Faraday rotation, MO figure of merit and MO swing factor are also investigated for several annealed garnet-phase films. PMID:29789463

Textured carbon surfaces on copper by sputtering

NASA Technical Reports Server (NTRS)

Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

1986-01-01

A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

An exploratory study of recycled sputtering and CsF2- current enhancement for AMS

NASA Astrophysics Data System (ADS)

Zhao, X.-L.; Charles, C. R. J.; Cornett, R. J.; Kieser, W. E.; MacDonald, C.; Kazi, Z.; St-Jean, N.

2016-01-01

The analysis of 135Cs/Cs ratios at levels below 10-12 by accelerator mass spectrometry (AMS) would preferably use commonly available negative ion injection systems. The sputter ion sources in these injectors should ideally produce currents of Cs- or Cs-containing molecular anions approaching μA levels from targets containing mg quantities of Cs. However, since Cs is the most electro-positive stable element in nature with a low electron affinity, the generation of large negative atomic, or molecular beams containing Cs, has been very challenging. In addition, the reduction of the interferences from the 135Ba isobar and the primary 133Cs+ beam used for sputtering are also necessary. The measurement of a wide range of the isotope ratios also requires the ion source memory of previous samples be minimized. This paper describes some progresses towards a potential solution of all these problems by recycled sputtering using fluorinating targets of PbF2 with mg CsF mixed in. The problems encountered indicate that considerable further studies and some redesign of the present ion sources will be desirable.

Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

NASA Astrophysics Data System (ADS)

Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

1981-02-01

An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

Deuterium sputtering of Li and Li-O films

NASA Astrophysics Data System (ADS)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Investigations into the Anti-Felting Properties of Sputtered Wool Using Plasma Treatment

NASA Astrophysics Data System (ADS)

M. Borghei, S.; Shahidi, S.; Ghoranneviss, M.; Abdolahi, Z.

2013-01-01

In this research the effects of mordant and plasma sputtering treatments on the crystallinity and morphological properties of wool fabrics were investigated. The felting behavior of the treated samples was also studied. We used madder as a natural dye and copper sulfate as a metal mordant. We also used copper as the electrode material in a DC magnetron plasma sputtering device. The anti-felting properties of the wool samples before and after dying was studied, and it was shown that the shrink resistance and anti-felting behavior of the wool had been significantly improved by the plasma sputtering treatment. In addition, the percentage of crystallinity and the size of the crystals were investigated using an X-ray diffractometer, and a scanning electron microscope was used for morphological analysis. The amount of copper particles on the surface of the mordanted and sputtered fabrics was studied using the energy dispersive X-ray (EDX) method, and the hydrophobic properties of the samples were examined using the water drop test. The results show that with plasma sputtering treatment, the hydrophobic properties of the surface of wool become super hydrophobic.

Time-resolved temperature study in a high-power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britun, Nikolay; Palmucci, Maria; Konstantinidis, Stephanos

2013-07-07

The gas heating dynamics is studied in a high-power impulse magnetron sputtering discharge operating in Ar-N{sub 2} gas mixtures. The time-resolved rotational temperature analysis based on the spectral transition between the B{sup 2}{Sigma}{sub u}{sup +}-X{sup 2}{Sigma}{sub g}{sup +} energy levels in molecular nitrogen ion (N{sub 2}{sup +} First Negative Band) is undertaken for this purpose. The rotational temperature in the discharge is found to increase linearly during the plasma pulse being roughly independent on the nitrogen content in the examined range. Such a temperature increase is attributed to the bulk gas heating which is the result of collisions with themore » sputtered species. Two sputtered materials, Ti and W, are examined during the study. In the case of W sputtering, the gas heating is found to be more pronounced than in the Ti case, which is explained by more efficient energy exchange between the sputtered W atoms and the bulk gas atoms during the plasma on-time. The obtained temperature data are compared to the laser-induced fluorescence study of Ar metastable atoms performed recently in the same discharge in our group. The particularities related to gas thermalization as well as to validity of the utilized approach for characterization of the pulsed sputtering discharges are discussed.« less

Near-Infrared Spectroscopy for Zeeman Spectra of Ti I in Plasma Using a Facing Target Sputtering System

NASA Astrophysics Data System (ADS)

Kobayashi, Shinji; Nishimiya, Nobuo; Suzuki, Masao

2017-10-01

The saturated absorption lines of neutral titanium were measured in the region of 9950-14380 cm-1 using a Ti:sapphire ring laser. A facing target sputtering system was used to obtain the gaseous state of a Ti I atom. The Zeeman splitting of 38 transitions was observed under the condition that the electric field component of a linearly polarized laser beam was parallel to the magnetic field. The gJ factors of the odd parity states were determined for 28 states belonging to 3d24s4p and 3d34p using those of the even parity states reported by Stachowska in 1997. The gJ factors of z5P1,2,3 levels were newly determined. gJ of y3F2, y3D2, z3P2, and z5S2 levels were refined.

Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

NASA Astrophysics Data System (ADS)

Vašina, P; Hytková, T; Eliáš, M

2009-05-01

The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

Physical processes in directed ion beam sputtering. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Robinson, R. S.

1979-01-01

The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

Angular distribution of hybridization in sputtered carbon thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Wang, H.; Wei, Z. C.

2017-08-01

The sp3/sp2 ratio of sputtered carbon thin film depends on the ion bombardment process and tailors the physical properties of carbon thin film. In present work, we report the angular distribution of hybridization in magnetron sputtered carbon thin film for the first time. By x-ray photoelectron spectra analyses, it is found that the sp3/sp2 ratio increases linearly with increasing the deposition angle from 0 to 90 degree, which could be attributed to the enhancement of direct knocking-out of near-surface target atoms. In addition, we also derive the sp3/sp2 ratio by simulation on complex permittivity in terahertz frequency using a modified percolation approximation tunneling model. Those derived data consist with the results from x-ray photoelectron spectroscopy.

Sputtering effects on mirrors made of different tungsten grades

NASA Astrophysics Data System (ADS)

Voitsenya, V. S.; Ogorodnikova, O. V.; Bardamid, A. F.; Bondarenko, V. N.; Konovalov, V. G.; Lytvyn, P. M.; Marot, L.; Ryzhkov, I. V.; Shtan', A. F.; Skoryk, O. O.; Solodovchenko, S. I.

2018-03-01

Because tungsten (W) is used in present fusion devices and it is a reference material for ITER divertor and possible plasma-facing material for DEMO, we strive to understand the response of different W grades to ion bombardment. In this study, we investigated the behavior of mirrors made of four polycrystalline W grades under long-term ion sputtering. Argon (Ar) and deuterium (D) ions extracted from a plasma were used to investigate the effect of projectile mass on surface modification. Depending on the ion fluence, the reflectance measured at normal incidence was very different for different W grades. The lowest degradation rate of the reflectance was measured for the mirror made of recrystallized W. The highest degradation rate was found for one of the ITER-grade W samples. Pre-irradiation of a mirror with 20-MeV W6+ ions, as simulation of neutron irradiation in ITER, had no noticeable influence on reflectance degradation under sputtering with either Ar or D ions.

Anomalous effects in the aluminum oxide sputtering yield

NASA Astrophysics Data System (ADS)

Schelfhout, R.; Strijckmans, K.; Depla, D.

2018-04-01

The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a new and fast method. The method is based on the meticulous determination of the reactive gas consumption during reactive DC magnetron sputtering and has been deployed to determine the sputtering yield of aluminum oxide. The accuracy of the proposed method is demonstrated by comparing its results to the common weight loss method excluding secondary effects such as redeposition. Both methods exhibit a decrease in sputtering yield with increasing discharge current. This feature of the aluminum oxide sputtering yield is described for the first time. It resembles the discrepancy between published high sputtering yield values determined by low current ion beams and the low deposition rate in the poisoned mode during reactive magnetron sputtering. Moreover, the usefulness of the new method arises from its time-resolved capabilities. The evolution of the alumina sputtering yield can now be measured up to a resolution of seconds. This reveals the complex dynamical behavior of the sputtering yield. A plausible explanation of the observed anomalies seems to originate from the balance between retention and out-diffusion of implanted gas atoms, while other possible causes are commented.

Low-Damage Sputter Deposition on Graphene

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jhanwar, Prachi, E-mail: prachijhanwar87@gmail.com; Department of Electronics, Banasthali University-304022, Rajasthan; Kumar, Arvind

2016-04-13

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) asmore » compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).« less

Optical monitoring of ion beam Y-Ba-Cu-O sputtering

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1990-11-01

The emission spectra resulting from ion beam sputtering a Y-Ba-Cu-O target were observed as a function of beam voltage and beam current. The spectra were relatively clean with several peaks readily attributed to each of Y, Ba, and Ar. Monitoring of copper and oxygen was more difficult with a single CuO peak and one O peak evident. The intensities of the cation peaks were linear with respect to beam voltage above 400 V. Since target current was found not to be directly proportional to beam current, target power was defined as the product of beam voltage and target current. The response of cation peak height to changes in target power was linear and similar for variations of either beam voltage or target current.

Anorthite sputtering by H + and Ar q+ (q = 1-9) at solar wind velocities

DOE PAGES

Hijazi, Hussein Dib; Bannister, Mark E.; Meyer, III, Harry M.; ...

2014-10-16

Here, we report sputtering measurements of anorthite-like material, taken to be representative of soils found in the lunar highlands, impacted by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the nonreactive heavy solar wind constituents), in the charge state range +1 to +9, at fixed solar wind-relevant impact velocities of 165 and 310 km/s (0.25 keV/amu and 0.5 keV/amu). A quartz microbalance approach (QCM) for determination of total sputtering yields was used. The goal of the measurements was to determine the sputtering contributionmore » of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H + fraction. The QCM results show a yield increase of a factor of about 80 for Ar + versus H + sputtering and an enhancement by a factor of 1.67 between Ar 9+ and Ar +, which is a clear indication of a potential sputtering effect.« less

Sputtering of sodium and potassium from nepheline: Secondary ion yields and velocity spectra

NASA Astrophysics Data System (ADS)

Martinez, R.; Langlinay, Th.; Ponciano, C. R.; da Silveira, E. F.; Palumbo, M. E.; Strazzulla, G.; Brucato, J. R.; Hijazi, H.; Agnihotri, A. N.; Boduch, P.; Cassimi, A.; Domaracka, A.; Ropars, F.; Rothard, H.

2017-09-01

Silicates are the dominant surface material of many Solar System objects, which are exposed to ion bombardment by solar wind ions and cosmic rays. Induced physico-chemical processes include sputtering which can contribute to the formation of an exosphere. We have measured sputtering yields and velocity spectra of secondary ions ejected from nepheline, an aluminosilicate thought to be a good analogue for Mercury's surface, as a laboratory approach to understand the evolution of silicate surfaces and the presence of Na and K vapor in the exosphere. Experiments were performed with highly charged ion beams (keV/u-MeV/u) delivered by GANIL using an imaging XY-TOF-SIMS device under UHV conditions. The fluence dependence of sputtering yields gives information about the evolution of surface stoichiometry during irradiation. From the energy distributions N(E) of sputtered particles, the fraction of particles which could escape from the gravitational field of Mercury, and of those falling back and possibly contributing to populate the exosphere can be roughly estimated.

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Peipei; Yang, Xu; Li, Hui

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CNmore » emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.« less

Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System

PubMed Central

Liu, Fang-Cheng; Li, Jyun-Yong; Chen, Tai-Hong; Chang, Chun-How; Lee, Ching-Ting; Hsiao, Wei-Hua; Liu, Day-Shan

2017-01-01

Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. PMID:28773159

Effects of sputtering mode on the microstructure and ionic conductivity of yttria-stabilized zirconia films

NASA Astrophysics Data System (ADS)

Yeh, Tsung-Her; Lin, Ruei-De; Cherng, Bo-Ruei; Cherng, Jyh-Shiarn

2018-05-01

The microstructure and ionic conductivity of reactively sputtered yttria-stabilized zirconia (YSZ) films are systematically studied. Those films were reactively sputtered in various sputtering modes using a closed-loop controlled system with plasma emission monitoring. A transition-mode sputtering corresponding to 45% of target poisoning produces a microstructure with ultrafine crystallites embedded in an amorphous matrix, which undergoes an abnormal grain growth upon annealing at 800 °C. At 500 °C, the measured ionic conductivity of this annealed film is higher, by about a half order of magnitude, than those of its poisoned-mode counterparts, which are in turn significantly higher than that of the YSZ bulk by about two orders of magnitude. The abnormally-grown ultra-large grain size of the film deposited in the transition mode and then annealed is believed to be responsible for the former comparison due to the suppression of the grain boundary blocking effect, while the latter comparison can be attributed to the interface effect.

Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com; Pandey, Nidhi; Behera, Layanta

2016-05-23

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films.more » In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.« less

Huge increase in gas phase nanoparticle generation by pulsed direct current sputtering in a reactive gas admixture

NASA Astrophysics Data System (ADS)

Polonskyi, Oleksandr; Peter, Tilo; Mohammad Ahadi, Amir; Hinz, Alexander; Strunskus, Thomas; Zaporojtchenko, Vladimir; Biederman, Hynek; Faupel, Franz

2013-07-01

Using reactive DC sputtering in a gas aggregation cluster source, we show that pulsed discharge gives rise to a huge increase in deposition rate of nanoparticles by more than one order of magnitude compared to continuous operation. We suggest that this effect is caused by an equilibrium between slight target oxidation (during "time-off") and subsequent sputtering of Ti oxides (sub-oxides) at "time-on" with high power impulse.

Impurity sputtering from the guard limiter of the lower hybrid wave antenna in a tokamak

NASA Astrophysics Data System (ADS)

Ou, Jing; Xiang, Nong; Men, Zongzheng

2018-01-01

The hot spots on the guard limiter of the lower hybrid wave (LHW) antenna in a tokamak were believed to be associated with the energetic electrons produced by the wave-plasma interaction, leading to a sudden increase of impurity influx and even ending with disruption. To investigate the carbon sputtering from the guard limiter of the LHW antenna, the impurity sputtering yield is calculated by coupling the module of Plasma Surface Interaction [Warrier et al., Comput. Phys. Commun. 46, 160 (2004)] with the models for the sheath of plasma containing energetic electron and for the material heat transport. It is found that the presence of a small population of energetic electrons can change significantly the impurity sputtering yield, as a result of the sheath potential modification. For the typical plasma parameters in the current tokamak, with an increase in the energetic electron component, the physical sputtering yield reaches its maximum and then decreases slowly, while the chemical sputtering yield demonstrates a very sharp increase and then decreases rapidly. In addition, effects of the ion temperature and background electron density on the impurity sputtering are also discussed.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

2016-05-23

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less

Molybdenum and carbon atom and carbon cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, Eider

Exit-angle resolved Mo atom sputtering yield under Xe ion bombardment and carbon atom and cluster (C2 and C3) sputtering yields under Xe, Kr, Ar, Ne and He ion bombardment from a plasma are measured for low incident energies (75--225 eV). An energy-resolved quadrupole mass spectrometer (QMS) is used to detect the fraction of un-scattered sputtered neutrals that become ionized in the plasma; the angular distribution is obtained by changing the angle between the target and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles between the sample and the QMS. The elastic scattering cross-sections of C, C2 and C3 with the different bombarding gas neutrals is obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. Because the results obtained with the QMS are relative, the Mo atom sputtering results are normalized to the existing data in the literature and the total sputtering yield for carbon (C+C 2+C3) for each bombarding gas is obtained from weight loss measurements. The absolute sputtering yield for C, C2 and C 3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. The angular sputtering distribution for Mo has a maximum at theta=60°, and this maximum becomes less pronounced as the incident ion energy increases. The results of the Monte Carlo TRIDYN code simulation for the angular distribution of Mo atoms sputtered by Xe bombardment are in agreement with the experiments. For carbon sputtering under-cosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases are also observed. The C, C2 and C3 sputtering yield data shows a clear decrease of the atom to cluster (C/C2 and C/C3) sputtering ratio as the incident ion mass increases

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE PAGES

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann; ...

2018-05-11

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationshipmore » between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Furthermore, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fleddermann, C.B.

The sputter deposition of high-temperature superconducting thin films was studied using optical emission spectroscopy. Argon or oxygen ions generated by a Kaufman ion gun were used to sputter material from a composite target containing yttrium, barium, and copper which had been oxygen annealed. The impact of ions onto the target generates a plume of sputtered material which includes various excited-state atoms and molecules. In these studies, optical emission is detected for all the metallic components of the film as well as for metallic oxides ejected from the target. No emission due to atomic or molecular oxygen was detected, however. Variationsmore » in sputter conditions such as changes in sputter ion energy, oxygen content of the beam, and target temperature are shown to greatly affect the emission intensity, which may correlate to the characteristics of the sputtering and the quality of the films deposited. The results suggest that optical emission from the sputtered material may be useful for real-time monitoring and control of the sputter deposition process.« less

The production and sputtering of S2 by keV ion bombardment

NASA Technical Reports Server (NTRS)

Boring, J. W.; Chrisey, D. B.; Oshaughnessy, D. J.; Phipps, J. A.; Zhao, N.

1986-01-01

The ion bombardment of S-containing molecules in comets is simulated experimentally. Mass-analyzed 30-keV beams of Ar(+) and He(+) are directed at solid S, H2S, and CS2 targets at temperatures 15 K, and the neutral molecular species produced are ionized and analyzed using a quadrupole mass spectrometer. The dominant species detected are S1 and S2 for the S target, H2S and S2 for the H2S target, and S, CS, S2, and CS2 for the CS2 target. In the latter case, it is found that after about 10 to the 14th He(+) ions/sq cm have struck the target, further sputtering is prevented by formation of a dark brown deposit which is stable at room temperature; the residue forms more slowly when Ar(+) ions are used. These results, indicating relatively efficient S2 production by ion bombardment, are applied to theoretical models of S2 production and/or ejection by solar-wind, solar-flare, or cosmic-ray ions striking comets. It is found that direct solar-wind production of S2 by sputtering is unlikely at realistic bombardment rates, but that H2S-S2 conversion by energetic ions could be significant, with less stringent ice-temperature and irradiation-flux constraints than in the case of S2 production by photons.

Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide

NASA Astrophysics Data System (ADS)

Xiao, Nan

2013-01-01

Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes. This work involves the fabrication and characterization of TFTs using ZnO deposited by sputtering. An overview of the process details and results from recently fabricated TFTs following a full-factorial designed experiment will be presented. Material characterization and analysis of electrical results will be described. The investigated process variables were the gate dielectric and ZnO sputtering process parameters including power density and oxygen partial pressure. Electrical results showed clear differences in treatment combinations, with certain I-V characteristics demonstrating superior performance to preliminary work. A study of device stability will also be discussed.

Analysis of surface sputtering on a quantum statistical basis

NASA Technical Reports Server (NTRS)

Wilhelm, H. E.

1975-01-01

Surface sputtering is explained theoretically by means of a 3-body sputtering mechanism involving the ion and two surface atoms of the solid. By means of quantum-statistical mechanics, a formula for the sputtering ratio S(E) is derived from first principles. The theoretical sputtering rate S(E) was found experimentally to be proportional to the square of the difference between incident ion energy and the threshold energy for sputtering of surface atoms at low ion energies. Extrapolation of the theoretical sputtering formula to larger ion energies indicates that S(E) reaches a saturation value and finally decreases at high ion energies. The theoretical sputtering ratios S(E) for wolfram, tantalum, and molybdenum are compared with the corresponding experimental sputtering curves in the low energy region from threshold sputtering energy to 120 eV above the respective threshold energy. Theory and experiment are shown to be in good agreement.

Sputter deposition of MgxAlyOz thin films in a dual-magnetron device: a multi-species Monte Carlo model

NASA Astrophysics Data System (ADS)

Yusupov, M.; Saraiva, M.; Depla, D.; Bogaerts, A.

2012-07-01

A multi-species Monte Carlo (MC) model, combined with an analytical surface model, has been developed in order to investigate the general plasma processes occurring during the sputter deposition of complex oxide films in a dual-magnetron sputter deposition system. The important plasma species, such as electrons, Ar+ ions, fast Ar atoms and sputtered metal atoms (i.e. Mg and Al atoms) are described with the so-called multi-species MC model, whereas the deposition of MgxAlyOz films is treated by an analytical surface model. Target-substrate distances for both magnetrons in the dual-magnetron setup are varied for the purpose of growing stoichiometric complex oxide thin films. The metal atoms are sputtered from pure metallic targets, whereas the oxygen flux is only directed toward the substrate and is high enough to obtain fully oxidized thin films but low enough to avoid target poisoning. The calculations correspond to typical experimental conditions applied to grow these complex oxide films. In this paper, some calculation results are shown, such as the densities of various plasma species, their fluxes toward the targets and substrate, the deposition rates, as well as the film stoichiometry. Moreover, some results of the combined model are compared with experimental observations. Note that this is the first complete model, which can be applied for large and complicated magnetron reactor geometries, such as dual-magnetron configurations. With this model, we are able to describe all important plasma species as well as the deposition process. It can also be used to predict film stoichiometries of complex oxide films on the substrate.

A high yield neutron target

NASA Technical Reports Server (NTRS)

Alger, D. L.; Steinberg, R.; Weisenbach, P.

1974-01-01

Target, in cylinder form, rotates rapidly in front of beam. Titanium tritide film is much thicker than range of accelerated deutron. Sputtering electrode permits full use of thick film. Stream of high-velocity coolant provides efficient transfer of heat from target.

Synthesis and characterization of delafossite thin films by reactive RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Asmat Uceda, Martin Antonio

This work presents a comparative study on optical and electrical properties of CuAlO2 thin films on sapphire (0001) substrates deposited with two different growth conditions using reactive RF-magnetron sputtering technique from metallic Cu and Al targets. CuAlO2 is a very promising material for transparent electronic applications, it is intended that comparison of results obtained from both approaches, could lead to optimization and control of the physical properties of this material, namely its electrical conductivity and optical transmittance. All samples were heat treated at 1100°C using rapid thermal annealing with varying time and rate of cooling. The effect of sputtering conditions and different annealing time on phase formation and evolution is studied with X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that for most of the samples CuAlO2 phase is formed after 60 min of annealing time, but secondary phases were also present that depend on the deposition conditions. However, pure CuAlO2 phase was obtained for annealed CuO on sapphire films with annealing time of 60 min. The optical properties obtained from UV-Visible spectroscopic measurement reveals indirect and direct optical band gaps for CuAlO2 films and were found to be 2.58 and 3.72 eV respectively. The films show a transmittance of about 60% in the visible range. Hall effect measurements indicate p-type conductivity. Van der Pauw technique was used to measure resistivity of the samples. The highest electrical conductivity and charge carrier concentration obtained were of 1.01x10-1S.cm -1 and 3.63 x1018 cm-3 respectively.

Initial deposition of calcium phosphate ceramic on polystyrene and polytetrafluoroethylene by rf magnetron sputtering deposition

NASA Astrophysics Data System (ADS)

Feddes, B.; Wolke, J. G. C.; Jansen, J. A.; Vredenberg, A. M.

2003-03-01

Calcium phosphate (CaP) coatings can be applied to improve the biological performance of polymeric medical implants. A strong interfacial bond between ceramic and polymer is required for clinical applications. Because the chemical structure of an interface plays an important role in the adhesion of a coating, we studied the formation of the interface between CaP and polystyrene (PS) and polytetrafluoroethylene (PTFE). The coating was deposited in a radio frequency (rf) magnetron sputtering deposition system. Prior to the deposition, some samples received an oxygen plasma pretreatment. We found that the two substrates show a strongly different reactivity towards CaP. On PS a phosphorus and oxygen enrichment is present at the interface. This is understood from POx complexes that are able to bind to the PS. The effects of the plasma pretreatment are overruled by the deposition process itself. On PTFE, a calcium enrichment and an absence of phosphorus is found at the interface. The former is the result of CaF2-like material being formed at the interface. The latter may be the result of phosphorus reacting with escaping fluorine to a PF3 molecule, which than escapes from the material as a gas molecule. We found that the final structure of the interface is mostly controlled by the bombardment of energetic particles escaping either from the plasma or from the sputtering target. The work described here can be used to understand and improve the adhesion of CaP coatings deposited on medical substrates.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

NASA Astrophysics Data System (ADS)

Feder, R.; Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B.

2013-12-01

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done.A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering.

PubMed

Gago, R; Jaafar, M; Palomares, F J

2018-07-04

The surface morphology of molybdenum silicide (Mo x Si 1-x ) films has been studied after low-energy Ar + ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si 1-x films with compositions below, equal and above the MoSi 2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si 1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si 1-x . Contrary to silicon, Mo x Si 1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si 1-x films with 1 keV Ar + at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si 1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si 1-x under grazing incidence is also attributed to the dominance of

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

NASA Astrophysics Data System (ADS)

Gago, R.; Jaafar, M.; Palomares, F. J.

2018-07-01

The surface morphology of molybdenum silicide (Mo x Si1‑x ) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si1‑x films with compositions below, equal and above the MoSi2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si1‑x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si1‑x . Contrary to silicon, Mo x Si1‑x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si1‑x films with 1 keV Ar+ at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si1‑x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si1‑x under grazing incidence is also attributed to the dominance

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Evaluation of ion-sputtered molybdenum disulfide bearings for spacecraft gimbals

NASA Astrophysics Data System (ADS)

Loewenthal, S. H.; Chou, R. G.; Hopple, G. B.; Wenger, W. L.

1994-07-01

High-density, sputtered molybdenum disulfide films (MoS2) were investigated as lubricants for the next generation of spacecraft gimbal bearings where low torque signatures and long life are required. Low friction in a vacuum environment, virturally no out-gassing, insensitivity to low temperature, and radiation resistance of these lubricant films are valued in such applications. One hundred and twenty five thousand hours of acumulated bearing test time were obtained on 24 pairs of flight-quality bearings ion-sputtered with three types of advanced MoS2 films. Life tests were conducted in a vacuum over a simulated duty cycle for a space payload gimbal. Optimum retainer and ball material composition were investigated. Comparisions were made with test bearings lubricated with liquid space lubricants. Self-lubricating PTFE retainers were required for long life, i.e., greater than 40 million gimbal cycles. Bearings with polyimide retainers, silicon nitride ceramic balls, or steel balls sputtered with MoS2 film suffered early torque failure, irrespective of the type of race-sputtered MoS2 film. Failure generally resulted from excess film or retainer debris deposited in the ball track which tended to jam the bearing. Both grease lubricated and the better MoS2 film lubricated bearings produced long lives, although the torque with liquid lubricants was lower and less irregular.

Investigation of argon ion sputtering on the secondary electron emission from gold samples

NASA Astrophysics Data System (ADS)

Yang, Jing; Cui, Wanzhao; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

2016-09-01

Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An ;equivalent work function; is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called ;work function; (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

Application of optical broadband monitoring to quasi-rugate filters by ion-beam sputtering

NASA Astrophysics Data System (ADS)

Lappschies, Marc; Görtz, Björn; Ristau, Detlev

2006-03-01

Methods for the manufacture of rugate filters by the ion-beam-sputtering process are presented. The first approach gives an example of a digitized version of a continuous-layer notch filter. This method allows the comparison of the basic theory of interference coatings containing thin layers with practical results. For the other methods, a movable zone target is employed to fabricate graded and gradual rugate filters. The examples demonstrate the potential of broadband optical monitoring in conjunction with the ion-beam-sputtering process. First-characterization results indicate that these types of filter may exhibit higher laser-induced damage-threshold values than those of classical filters.

Electron reflection and secondary emission characteristics of sputter-textured pyrolytic graphite surfaces

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Curren, A. N.; Sovey, J. S.

1981-01-01

Low secondary and reflected primary electron emission from the collector electrode surfaces is important for optimum collector efficiency and hence for high overall efficiency of microwave amplifier tubes used in communication satellites and in military systems. Ion sputter texturing of the surface effectively suppresses electron emission from pyrolytic graphite, which is a promising collector electrode material. Secondary and reflected primary electron emission characteristics of sputter textured pyrolytic graphite surfaces with microstructures of various sizes and densities are presented. The microstructure with the lowest electron emission levels, less than those of soot, consists of a dense array of tall, thin spires.

Sputter-deposited fuel cell membranes and electrodes

NASA Technical Reports Server (NTRS)

Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

2001-01-01

A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

Deuterium Retention and Physical Sputtering of Low Activation Ferritic Steel

NASA Astrophysics Data System (ADS)

T, Hino; K, Yamaguchi; Y, Yamauchi; Y, Hirohata; K, Tsuzuki; Y, Kusama

2005-04-01

Low activation materials have to be developed toward fusion demonstration reactors. Ferritic steel, vanadium alloy and SiC/SiC composite are candidate materials of the first wall, vacuum vessel and blanket components, respectively. Although changes of mechanical-thermal properties owing to neutron irradiation have been investigated so far, there is little data for the plasma material interactions, such as fuel hydrogen retention and erosion. In the present study, deuterium retention and physical sputtering of low activation ferritic steel, F82H, were investigated by using deuterium ion irradiation apparatus. After a ferritic steel sample was irradiated by 1.7 keV D+ ions, the weight loss was measured to obtain the physical sputtering yield. The sputtering yield was 0.04, comparable to that of stainless steel. In order to obtain the retained amount of deuterium, technique of thermal desorption spectroscopy (TDS) was employed to the irradiated sample. The retained deuterium desorbed at temperature ranging from 450 K to 700 K, in the forms of DHO, D2, D2O and hydrocarbons. Hence, the deuterium retained can be reduced by baking with a relatively low temperature. The fluence dependence of retained amount of deuterium was measured by changing the ion fluence. In the ferritic steel without mechanical polish, the retained amount was large even when the fluence was low. In such a case, a large amount of deuterium was trapped in the surface oxide layer containing O and C. When the fluence was large, the thickness of surface oxide layer was reduced by the ion sputtering, and then the retained amount in the oxide layer decreased. In the case of a high fluence, the retained amount of deuterium became comparable to that of ferritic steel with mechanical polish or SS 316L, and one order of magnitude smaller than that of graphite. When the ferritic steel is used, it is required to remove the surface oxide layer for reduction of fuel hydrogen retention. Ferritic steel sample was

Texturing effects in molybdenum and aluminum nitride films correlated to energetic bombardment during sputter deposition

NASA Astrophysics Data System (ADS)

Drüsedau, T. P.; Koppenhagen, K.; Bläsing, J.; John, T.-M.

Molybdenum films sputter-deposited at low pressure show a (110) to (211) texture turnover with increasing film thickness, which is accompanied by a transition from a fiber texture to a mosaic-like texture. The degree of (002) texturing of sputtered aluminum nitride (AlN) films strongly depends on nitrogen pressure in Ar/N2 or in a pure N2 atmosphere. For the understanding of these phenomena, the power density at the substrate during sputter deposition was measured by a calorimetric method and normalized to the flux of deposited atoms. For the deposition of Mo films and various other elemental films, the results of the calorimetric measurements are well described by a model. This model takes into account the contributions of plasma irradiation, the heat of condensation and the kinetic energy of sputtered atoms and reflected Ar neutrals. The latter two were calculated by TRIM.SP Monte Carlo simulations. An empirical rule is established showing that the total energy input during sputter deposition is proportional to the ratio of target atomic mass to sputtering yield. For the special case of a circular planar magnetron the radial dependence of the Mo and Ar fluxes and related momentum components at the substrate were calculated. It is concluded that mainly the lateral inhomogeneous radial momentum component of the Mo atoms is the cause of the in-plane texturing. For AlN films, maximum (002) texturing appears at about 250 eV per atom energy input.

One-dimensional analysis of the rate of plasma-assisted sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

2007-04-15

In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and ofmore » the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition.« less

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, David B.; Wiley, John D.

1989-01-01

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2 plasma

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Ries, Stefan; Bibinov, Nikita; Awakowicz, Peter; Mráz, Stanislav; Schneider, Jochen M.; Mussenbrock, Thomas

2018-05-01

Direct current magnetron sputtering of Al by Ar and Ar/N2 low pressure plasmas was characterized by experimental and theoretical means in a unified consideration. Experimentally, the plasmas were analyzed by optical emission spectroscopy, while the film deposition rate was determined by weight measurements and laser optical microscopy, and the film composition by energy dispersive x-ray spectroscopy. Theoretically, a global particle and power balance model was used to estimate the electron temperature T e and the electron density n e of the plasma at constant discharge power. In addition, the sputtering process and the transport of the sputtered atoms were described using Monte Carlo models—TRIDYN and dsmcFoam, respectively. Initially, the non-reactive situation is characterized based on deposition experiment results, which are in agreement with predictions from simulations. Subsequently, a similar study is presented for the reactive case. The influence of the N2 addition is found to be twofold, in terms of (i) the target and substrate surface conditions (e.g., sputtering, secondary electron emission, particle sticking) and (ii) the volumetric changes of the plasma density n e governing the ion flux to the surfaces (e.g., due to additional energy conversion channels). It is shown that a combined experimental/simulation approach reveals a physically coherent and, in particular, quantitative understanding of the properties (e.g., electron density and temperature, target surface nitrogen content, sputtered Al density, deposited mass) involved in the deposition process.

Using sputter coated glass to stabilize microstrip gas chambers

DOEpatents

Gong, Wen G.

1997-01-01

By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.

Raman and PEELS studies of magnetron sputtered a-C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.; Jen, T.M.; Zeng, X.

Amorphous carbon coatings (a-C, a-C:H) of less than 100 nm thick were deposited on KBr pellets and silicon wafer substrate via magnetron sputtering of graphic target in argon, argon/hydrogen and argon/nitrogen atmosphere. Parallel electron energy loss spectroscopy (PEELS) analysis was used to quantify the sp{sup 2}/sp{sup 3} bonding in carbon films. Stand-alone films of amorphous carbon were produced by sputtering onto compressed KBr pellets and then floating off in distilled water for PEELS study. Raman spectroscopy was used to measure the peak intensity ratio of D-band to that of the G-band (I{sub d}/I{sub g}). It shows that higher sp{sup 3}more » fraction often associates with Raman peak ratio I{sub d}/I{sub g}. At the same time, G-band peak position P{sub g} decreases while sp{sup 3} fraction increases.« less

Enhancement of Ti-containing hydrogenated carbon (Tisbnd C:H) films by high-power plasma-sputtering

NASA Astrophysics Data System (ADS)

Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

2012-02-01

Ti-containing amorphous hydrogenated carbon (Tisbnd C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Tisbnd TiCsbnd DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Tisbnd C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

Discharge runaway in high power impulse magnetron sputtering of carbon: the effect of gas pressure, composition and target peak voltage

NASA Astrophysics Data System (ADS)

Vitelaru, Catalin; Aijaz, Asim; Constantina Parau, Anca; Kiss, Adrian Emil; Sobetkii, Arcadie; Kubart, Tomas

2018-04-01

Pressure and target voltage driven discharge runaway from low to high discharge current density regimes in high power impulse magnetron sputtering of carbon is investigated. The main purpose is to provide a meaningful insight of the discharge dynamics, with the ultimate goal to establish a correlation between discharge properties and process parameters to control the film growth. This is achieved by examining a wide range of pressures (2–20 mTorr) and target voltages (700–850 V) and measuring ion saturation current density at the substrate position. We show that the minimum plasma impedance is an important parameter identifying the discharge transition as well as establishing a stable operating condition. Using the formalism of generalized recycling model, we introduce a new parameter, ‘recycling ratio’, to quantify the process gas recycling for specific process conditions. The model takes into account the ion flux to the target, the amount of gas available, and the amount of gas required for sustaining the discharge. We show that this parameter describes the relation between the gas recycling and the discharge current density. As a test case, we discuss the pressure and voltage driven transitions by changing the gas composition when adding Ne into the discharge. We propose that standard Ar HiPIMS discharges operated with significant gas recycling do not require Ne to increase the carbon ionization.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Ion beam sputter deposited diamond like films

NASA Technical Reports Server (NTRS)

Banks, B. A.; Rutledge, S. K.

1982-01-01

A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

[Study on anti-coagulant property of radio frequency sputtering nano-sized TiO2 thin films].

PubMed

Tang, Xiaoshan; Li, Da

2010-12-01

Nano-TiO2 thin films were prepared by Radio frequency (RF) sputtering on pyrolytic carbon substrates. The influences of sputtering power on the structure and the surface morphology of TiO2 thin films were investigated by X-ray diffraction (XRD), and by scanning electron microscopy (SEM). The results show that the TiO2 films change to anatase through the optimum of sputtering power. The mean diameter of nano-particle is about 30 nm. The anti-coagulant property of TiO2 thin films was observed through platelet adhesion in vitro. The result of experiment reveals the amount of thrombus on the TiO2 thin films being much less than that on the pyrolytic carbon. It also indicates that the RF sputtering Nano-sized TiO2 thin films will be a new kind of promising materials applied to artificial heart valve and endovascular stent.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

NASA Astrophysics Data System (ADS)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

2013-10-01

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

A facility to study the particles released by ion sputtering process

NASA Astrophysics Data System (ADS)

de Angelis, E.; di Lellis, A. M.; Vannaroni, G.; Orsini, S.; Mangano, V.; Milillo, A.; Massetti, S.; Mura, A.; Vertolli, N.

2007-08-01

Research on the planetary surface erosion and planetary evolution could be enriched with the detection of the escaping material, in terms of energy and direction, caused by ions sputtering. A complete study of emitted neutral distribution from which infers the processes occurring on the impacted surface requires dedicated instrumentation, tailored on the peculiarity on the low energy profile of the sputtered signal. We propose a comprehensive facility at INAF/IFSI in Rome intended to provide the opportunity to investigate the interaction of selectable ion beam with planetary analogues through the detection of sputtered neutral atoms. The laboratory is equipped with a high volume UHV chamber, ion selectable sources in the range 0 to 10 keV, a set of 3D sample/sensor orientation motion actuation motors down to 1/100 deg resolution. The laboratory will support a set of neutral sensor heads sets derived from the Emitted for Low Energetic Neutral Atoms (ELENA) instrument under development for the ESA BepiColombo Mercury mission able to detect neutral atoms (few eV-up to 5 keV).

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

2011-11-01

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

NASA Technical Reports Server (NTRS)

Christoffersen, R.; Rahman, Z.; Keller, L. P.

2012-01-01

As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here

Investigation of optical properties of ternary Zn-Ti-O thin films prepared by magnetron reactive co-sputtering

NASA Astrophysics Data System (ADS)

Netrvalová, Marie; Novák, Petr; Šutta, Pavol; Medlín, Rostislav

2017-11-01

Zn-Ti-O thin films with different concentrations of titanium were deposited by reactive magnetron co-sputtering in a reactive Ar/O2 atmosphere from zinc and titanium targets. It was found that with increasing Ti content the structure of the films gradually changes from a fully crystalline pure ZnO wurtzite structure with a strongly preferred columnar orientation to an amorphous Zn-Ti-O material with 12.5 at.% Ti. The optical parameters (spectral refractive index and extinction coefficient, optical band gap) and thickness of the films were analysed by the combined evaluation of ellipsometric measurements and measurements of transmittance on a UV-vis spectrophotometer. For evaluation of optical parameters was used Cody-Lorentz dispersion model.

In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oya, Y.; Sato, M.; Uchimura, H.

2015-03-15

Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{submore » 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)« less

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, D.B.; Wiley, J.D.

1989-09-12

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

1998-01-01

The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

Hydrophobization of track membrane surface by ion-plasma sputtering method

NASA Astrophysics Data System (ADS)

Kuklin, I. E.; Khlebnikov, N. A.; Barashev, N. R.; Serkov, K. V.; Polyakov, E. V.; Zdorovets, M. V.; Borgekov, D. B.; Zhidkov, I. S.; Cholakh, S. O.; Kozlovskiy, A. L.

2017-09-01

This article reviews the possibility of applying inorganic coatings of metal compounds on PTM by ion-plasma sputtering. The main aim of this research is to increase the contact angle of PTM surfaces and to impart the properties of a hydrophobic material to it. After the modification, the initial contact angle increased from 70° to 120°.

Studies of the Cr-CrN coating characteristics formed by means of the magnetron sputtering method from bulk target

NASA Astrophysics Data System (ADS)

Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

2017-07-01

The paper presents the study’s results of ion-plasma chromium based coating characteristics produced on blade steel samples 12Kh13 and EI961 by means of the magnetron sputtering method from the bulk “hot” target. A set of metallographic studies and erosion tests of coatings were carried out using the research equipment URI (unique research installation) “Hydroshock rig Erosion-M” of NRU “MPEI”. Cr-CrN based coatings have a layered structure; thickness of intermediate Cr layers ranges from 0.7 to 1.7 μm, thickness of nitride layers CrN ranges from 1.5 to 4 μm, while the overall coating thickness is 17.0-21.5 μm coating microhardness is 1830-1880 HV0.05. The resulting coatings are found to increase 1.5 times the incubation period duration of erosion wear for steels 12Kh13 and EI961; they reduce the maximum erosion rate 1.3 times, and the steady erosion rate - 1.5 times.

Advanced capabilities and applications of a sputter-RBS system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brijs, B.; Deleu, J.; Beyer, G.

1999-06-10

In previous experiments, sputter-RBS{sup 1} has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity formore » Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions.« less

Estimation of the reduction of sputtering for fusion grade materials after disappearance of the Debye sheath

NASA Astrophysics Data System (ADS)

Adhikari, S.; Moulick, R.; Goswami, K. S.

2018-02-01

The effect of grazing angle on a solid surface (divertor) erosion due to ion sputtering is studied by 1D-3V fluid approach. For an oblique magnetic field, there exists a region in front of the solid surface called Chodura sheath (CS). It is assumed that the CS is additive to the Debye sheath (DS). For a certain value of the grazing angle, it has been observed that the DS vanishes and the entire potential drop occurs across the CS. This new analysis of the event provides some facts of pragmatic importance in improving the solutions of edge impurity codes. Important factors, such as ion energy, impact angle for physical sputtering are highlighted. The dependence of these two parameters on the grazing angle is also investigated in detail.

Industrial recovered-materials-utilization targets for the textile-mill-products industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

1979-01-01

The Congress, in the National Energy Conservation and Policy Act of 1978 (NECPA), directed the Department of Energy to establish materials recovery targets for the metals and metal products, paper and allied products, rubber, and textile-mill-products industries. The targets were developed to provide incentives for using energy-saving recorded materials and to provied a yardstick for measuring progress and improvement in this endeavor. The NECPA indicates that the targets should represent the maximum technically and economically feasible increase in the use of energy-saving recovered materials that each industry can achieve progressively by January 1, 1987. Materials affected by recovered-materials targets includemore » and are limited to aluminum, copper, lead, zinc, iron, steel, paper and associated products, textile-mill, products, and rubber. Using information gathered from the textile-mill-products industry and from other textile-relaed sources, DOE has developed recovered materials targets for that industry. This report presents those targets and their basis and justification. Following an overview of the textile industry, the chapters are: Textile-Mill-Products Industry Operations; Economic Analysis of the Textile-Mill-Products Industry; Governmental and Regulatory Influence on the US Textile Industry; Current Mill Use of Recovered Materials in the Textile-Mill-Products Industry; Limitations on the Use of Recovered Materials in the US Textile-Mill-Products Industry; Materials-Recovery Targets; and Government and Industry Actions That Could Increase the Use of Recovered Materials.« less

Sputter deposited titanium disilicide at high substrate temperatures

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.; Lajos, R.

1984-08-01

Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on <111> bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

NASA Astrophysics Data System (ADS)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

Optical and hydrophobic properties of co-sputtered chromium and titanium oxynitride films

NASA Astrophysics Data System (ADS)

Rawal, Sushant K.; Chawla, Amit Kumar; Jayaganthan, R.; Chandra, Ramesh

2011-08-01

The chromium and titanium oxynitride films on glass substrate were deposited by using reactive RF magnetron sputtering in the present work. The structural and optical properties of the chromium and titanium oxynitride films as a function of power variations are investigated. The chromium oxynitride films are crystalline even at low power of Cr target (≥60 W) but the titanium oxynitride films are amorphous at low target power of Ti target (≤90 W) as observed from glancing incidence X-ray diffraction (GIXRD) patterns. The residual stress and strain of the chromium oxynitride films are calculated by sin 2 ψ method, as the average crystallite size decreases with the increase in sputtering power of the Cr target, higher stress and strain values are observed. The chromium oxynitride films changes from hydrophilic to hydrophobic with the increase of contact angle value from 86.4° to 94.1°, but the deposited titanium oxynitride films are hydrophilic as observed from contact angle measurements. The changes in surface energy were calculated using contact angle measurements to substantiate the hydrophobic properties of the films. UV-vis and NIR spectrophotometer were used to obtain the transmission and absorption spectra, and the later was used for determining band gap values of the films, respectively. The refractive index of chromium and titanium oxynitride films increases with film packing density due to formation of crystalline chromium and titanium oxynitride films with the gradual rise in deposition rate as a result of increase in target powers.

Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

NASA Astrophysics Data System (ADS)

Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

2018-06-01

The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

RF sputter deposition of SrS:Eu and ZnS:Mn thin film electroluminescent phosphors

NASA Astrophysics Data System (ADS)

Droes, Steven Roy

1998-09-01

The radio-frequency (rf) sputter deposition of thin film electroluminescent (TFEL) materials was studied. Thin films of strontium sulfide doped with europium (SrS:Eu) and zinc sulfide doped with manganese (ZnS:Mn) were RF sputter deposited at different conditions. Photoluminescent and electroluminescent behaviors of these films were examined. Photoluminescent active, crystalline films of SrS:Eu were deposited at temperatures from 300o C to 650o C. The best temperature was 400o C, where a PL efficiency of 35% was achieved. Films were deposited at two power levels (90 and 120 watts) and five H2S concentrations (0.6%, 1.3%, 2.4%, 4.0% and 5.3%). The H2S concentration affected the crystallinity of the films and the PL performance. Lower H2S concentrations resulted in films with smaller crystallite sizes and poorer PL performance. Increased H2S concentrations increased the PL intensity and the overall spectra resembled that of an efficient SrS:Eu powder. Although there was a correlation between crystallinity and PL performance other factors such as europium concentration, distribution, and local environment also influence PL performance. Analytical results suggested that, although a film may be crystalline and have the correct europium concentration, unless the europium is in the correct localized environment, optimum PL response will not be achieved. Increased H2S concentrations produced films with europium located in optimum locations. Contrary to vacuum or chemical vapor deposited films, the sputter deposited films showed no trailing edge emission during electroluminescence. A suggested reason for this lack of a trailing edge emission in these films is that the sputter deposition process produces phosphor- insulator interfaces without shallow trap states. A statistical design of experiments approach was implemented for the sputter deposition of ZnS:Mn. The effects of four factors (substrate temperature, chamber pressure, power to the target, and H2S concentration) on

Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-10-01

We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

DOE PAGES

Anders, André

2014-09-02

In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in thismore » review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.« less

Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

NASA Astrophysics Data System (ADS)

Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

1992-03-01

A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou

2015-11-23

This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with themore » bias stability and thermal stability.« less

Evaluation of SmCo and SmCoN magnetron sputtering coatings for SOFC interconnect applications

NASA Astrophysics Data System (ADS)

Wu, Junwei; Li, Chengming; Johnson, Christopher; Liu, Xingbo

Cobalt or cobalt containing coatings are promising for SOFC interconnect applications because of their high conductivity. We have investigated SmCo and SmCoN coatings deposited by magnetron sputtering from a SmCo (5% Sm) target on to Crofer 22 APU substrates. The composition, structure, surface morphology, and electrical conductivity of the coated substrates were characterized by SEM/EDX, XRD and ASR measurements. Addition of Sm enhances the oxidation resistance and the Cr retention capability of the coatings. The use of nitride as a precursor stabilizes Sm during oxidation of the films, thus inhibiting diffusion of Fe, resulting in a more compact coating and lowering ASR. The combined advantages of Sm addition to cobalt and the use of a nitride as a precursor, makes SmCoN coatings a promising new interconnect coating material.

Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitelaru, Catalin; National Institute for Optoelectronics, Magurele-Bucharest, RO 077125; Lundin, Daniel

2013-09-02

The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Pan; Zhang, Hong; Chen, Wenhao

2015-01-15

Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200more » °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.« less

10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

NASA Astrophysics Data System (ADS)

Peng, Xiao; Zhao, Ming; Zhuang, Daming; Sun, Rujun; Zhang, Leng; Wei, Yaowei; Lv, Xunyan; Wu, Yixuan; Ren, Guoan

2018-06-01

We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.

A new highly automated sputter equipment for in situ investigation of deposition processes with synchrotron radiation.

PubMed

Döhrmann, Ralph; Botta, Stephan; Buffet, Adeline; Santoro, Gonzalo; Schlage, Kai; Schwartzkopf, Matthias; Bommel, Sebastian; Risch, Johannes F H; Mannweiler, Roman; Brunner, Simon; Metwalli, Ezzeldin; Müller-Buschbaum, Peter; Roth, Stephan V

2013-04-01

HASE (Highly Automated Sputter Equipment) is a new mobile setup developed to investigate deposition processes with synchrotron radiation. HASE is based on an ultra-high vacuum sputter deposition chamber equipped with an in-vacuum sample pick-and-place robot. This enables a fast and reliable sample change without breaking the vacuum conditions and helps to save valuable measurement time, which is required for experiments at synchrotron sources like PETRA III at DESY. An advantageous arrangement of several sputter guns, mounted on a rotative flange, gives the possibility to sputter under different deposition angles or to sputter different materials on the same substrate. The chamber is also equipped with a modular sample stage, which allows for the integration of different sample environments, such as a sample heating and cooling device. The design of HASE is unique in the flexibility. The combination of several different sputtering methods like standard deposition, glancing angle deposition, and high pressure sputter deposition combined with heating and cooling possibilities of the sample, the large exit windows, and the degree of automation facilitate many different grazing incidence X-ray scattering experiments, such as grazing incidence small and wide angle X-ray scattering, in one setup. In this paper we describe in detail the design and the performance of the new equipment and present the installation of the HASE apparatus at the Micro and Nano focus X-ray Scattering beamline (MiNaXS) at PETRA III. Furthermore, we describe the measurement options and present some selected results. The HASE setup has been successfully commissioned and is now available for users.

A new highly automated sputter equipment for in situ investigation of deposition processes with synchrotron radiation

NASA Astrophysics Data System (ADS)

Döhrmann, Ralph; Botta, Stephan; Buffet, Adeline; Santoro, Gonzalo; Schlage, Kai; Schwartzkopf, Matthias; Bommel, Sebastian; Risch, Johannes F. H.; Mannweiler, Roman; Brunner, Simon; Metwalli, Ezzeldin; Müller-Buschbaum, Peter; Roth, Stephan V.

2013-04-01

HASE (Highly Automated Sputter Equipment) is a new mobile setup developed to investigate deposition processes with synchrotron radiation. HASE is based on an ultra-high vacuum sputter deposition chamber equipped with an in-vacuum sample pick-and-place robot. This enables a fast and reliable sample change without breaking the vacuum conditions and helps to save valuable measurement time, which is required for experiments at synchrotron sources like PETRA III at DESY. An advantageous arrangement of several sputter guns, mounted on a rotative flange, gives the possibility to sputter under different deposition angles or to sputter different materials on the same substrate. The chamber is also equipped with a modular sample stage, which allows for the integration of different sample environments, such as a sample heating and cooling device. The design of HASE is unique in the flexibility. The combination of several different sputtering methods like standard deposition, glancing angle deposition, and high pressure sputter deposition combined with heating and cooling possibil-ities of the sample, the large exit windows, and the degree of automation facilitate many different grazing incidence X-ray scattering experiments, such as grazing incidence small and wide angle X-ray scattering, in one setup. In this paper we describe in detail the design and the performance of the new equipment and present the installation of the HASE apparatus at the Micro and Nano focus X-ray Scattering beamline (MiNaXS) at PETRA III. Furthermore, we describe the measurement options and present some selected results. The HASE setup has been successfully commissioned and is now available for users.

Sputtering in mercury ion thrusters

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.; Rawlin, V. K.

1979-01-01

A model, which assumes that chemisorption is the dominant mechanism, is applied to the sputtering rate measurements of the screen grid of a 30 cm thruster in the presence of nitrogen. The model utilizes inputs from a variety of experimental and analytical sources. The model of environmental effects on sputtering was applied to thruster conditions of low discharge voltage and a discussion of the comparison of theory and experiment is presented.

Nanoscale growth twins in sputtered metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misra, Amit; Anderoglu, Osman; Hoagland, Richard G

2008-01-01

We review recent studies on the mechanical properties of sputtered Cu and 330 stainless steel films with {l_brace}1 1 1{r_brace} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering and the deformation mechanisms that enable usually high strengths in nanotwinned structures are highlighted. Growth twins in sputtered films possess good thermal stability at elevated temperature, providing an approach to extend the application of high strength nanostructured metals to higher temperatures.

Effect of sputtering power on MgF2 thin films deposited by sputtering technique under fluorine trapping

NASA Astrophysics Data System (ADS)

De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Prathap, C.; Rao, K. Divakar; Sahoo, N. K.

2016-05-01

A non-conventional magnetron sputtering technique was explored to deposit magnesium fluoride thin films using the concept of fluorine gas trapping without the introduction of additional fluorine gas flow inside the chamber. The effect of magnetron power from 50 W to 250 W has been explored on structural, optical and physical properties of the samples. Polycrystalline nature with tetragonal crystallinity of the films has been confirmed by GIXRD measurements along with thickness dependency. Monotonic increase of attenuation coefficient (k) with RF power has been explained in terms of target compound dissociation probability. In conclusion, with fluorine trapping method, the samples deposited at lower RF powers (<100 W) are found to be more suitable for optical applications.

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

Mechanisms of material removal and mass transport in focused ion beam nanopore formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Kallol, E-mail: das7@illinois.edu; Johnson, Harley T., E-mail: htj@illinois.edu; Freund, Jonathan B., E-mail: jbfreund@illinois.edu

2015-02-28

Despite the widespread use of focused ion beam (FIB) processing as a material removal method for applications ranging from electron microscope sample preparation to nanopore processing for DNA sequencing, the basic material removal mechanisms of FIB processing are not well understood. We present the first complete atomistic simulation of high-flux FIB using large-scale parallel molecular dynamics (MD) simulations of nanopore fabrication in freestanding thin films. We focus on the root mechanisms of material removal and rearrangement and describe the role of explosive boiling in forming nanopores. FIB nanopore fabrication is typically understood to occur via sputter erosion. This can bemore » shown to be the case in low flux systems, where individual ion impacts are sufficiently separated in time that they may be considered as independent events. But our detailed MD simulations show that in high flux FIB processing, above a threshold level at which thermal effects become significant, the primary mechanism of material removal changes to a significantly accelerated, thermally dominated process. Under these conditions, the target is heated by the ion beam faster than heat is conducted away by the material, leading quickly to melting, and then continued heating to nearly the material critical temperature. This leads to explosive boiling of the target material with spontaneous bubble formation and coalescence. Mass is rapidly rearranged at the atomistic scale, and material removal occurs orders of magnitude faster than would occur by simple sputtering. While the phenomenology is demonstrated computationally in silicon, it can be expected to occur at lower beam fluxes in other cases where thermal conduction is suppressed due to material properties, geometry, or ambient thermal conditions.« less

Characteristics of W-26% Re Target Material(LCC-0103)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sunwoo, A.

2003-10-07

The W-26 wt-% Re alloy was selected as a Stanford Linear Collider (SLC) target material for its exceptional physics properties and for the high strength and good ductility at the anticipated target operating temperatures, above the DBTT. After several years of operation, the target failed catastrophically. A detailed microstructural and mechanical characterization of the non-irradiated disk indicates that the material has been PM processed, nonuniformly mechanically worked and stress relieved. As a result, the ductility of the material varies through the thickness of the disk, making it difficult to determine the DBTT. The results of tensile and fatigue properties aremore » reported with the corresponding fractography of the fracture surfaces.« less

Sputtering of ices in the outer solar system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, R.E.

1996-01-01

Exploration of the outer solar system has led to studies in a new area of physics: electronically induced sputtering of low-temperature, condensed-gas solids (ices). Many of the icy bodies in the outer solar system were found to be bombarded by relatively intense fluxes of ions and electrons, causing both changes in their optical reflectance and ejection (sputtering) of molecules from their surfaces. The small cohesive energies of the condensed-gas solids afford relatively large sputtering rates from the electronic excitations produced in the solid by fast ions and electrons. Such sputtering produces an ambient gas about an icy body, often themore » source of the local plasma. This colloquium outlines the physics of the sputtering of ices and its relevance to several outer-solar-system phenomena: the sputter-produced plasma trapped in Saturn{close_quote}s magnetosphere; the O{sub 2} atmosphere on Europa; and optical absorption features such as SO{sub 2} in the surface of Europa and O{sub 2} and, possibly, O{sub 3} in the surface of Ganymede. {copyright} {ital 1996 The American Physical Society.}« less

In situ sputter cleaning of thin film metal substrates for UHV-TEM corrosion studies.

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1973-01-01

A prerequisite for conducting valid corrosion experiments by in situ electron microscopy techniques is not only the achievement of UHV background pressure conditions at the site of the specimen but also the ability to clean the surface of the thin metal substrate specimen before initiation of the corrosive interaction. A miniaturized simple ion gun has been constructed for this purpose. The gun is small enough to be incorporated into an UHV electron microscope specimen chamber with hot stage in such a way as to permit bombardment of the substrate specimen while observing it by transmission electron microscopy TEM. It is shown that the ion beam generated is confined well enough to cause a sputtering removal of substrate material at a rate of approximately 5-10 A/min and to prevent the sputter deposition of contaminating material from the specimen holder.

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguirre, B.; Vemuri, R. S.; Zubia, David

2011-01-01

Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO₂ ceramic target has been employed for sputtering while varying the Ts from room temperature to 500⁰C during deposition. The effect of Ts on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition ofmore » the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at Ts<200 ⁰C are amorphous while films grown at Ts>200 ⁰C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ⁰C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO₂ films. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at Ts>200 ⁰C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO₂-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.« less

Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

NASA Astrophysics Data System (ADS)

Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

NASA Astrophysics Data System (ADS)

Greczynski, Grzegorz

2016-09-01

High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic

Characterization of chemical sputtering using the Mark II DiMES porous plug injector in attached and semi-detached divertor plasmas of DIII-D

NASA Astrophysics Data System (ADS)

McLean, A. G.; Davis, J. W.; Stangeby, P. C.; Allen, S. L.; Boedo, J. A.; Bray, B. D.; Brezinsek, S.; Brooks, N. H.; Fenstermacher, M. E.; Groth, M.; Haasz, A. A.; Hollmann, E. M.; Isler, R. C.; Lasnier, C. J.; Mu, Y.; Petrie, T. W.; Rudakov, D. L.; Watkins, J. G.; West, W. P.; Whyte, D. G.; Wong, C. P. C.

2009-06-01

An improved, self-contained gas injection system for the divertor material evaluation system (DiMES) on DIII-D has been employed for in situ study of chemical erosion in the tokamak divertor environment. To minimize perturbation to local plasma, the Mark II porous plug injector (PPI) releases methane through a porous graphite surface at the outer strike point at a rate precisely controlled by a micro-orifice flow restrictor to be approximately equal as that predicted for intrinsic chemical sputtering. Effective photon efficiencies resulting from CH 4 are found to be 58 ± 12 in an attached divertor ( ne ˜ 1.5 × 10 13/cm 3, Te ˜ 25 eV, Tsurf ˜ 450 K), and 94 ± 20 in a semi-detached cold divertor ( ne ˜ 6.0 × 10 13/cm 3, Te ˜ 2-3 eV, Tsurf ˜ 350 K). These values are significantly more than previous measurements in similar plasma conditions, indicating the importance of the injection rate and local re-erosion for the integrity of this analysis. The contribution of chemical versus physical sputtering to the source of C + at the target is assessed through simultaneous measurement of CII line, and CD plus CH-band emissions during release of CH 4 from the PPI, then compared with that seen in intrinsic sputtering.

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si withoutmore » HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.« less

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

REACTIVE SPUTTER DEPOSITION OF CHROMIUM NITRIDE COATINGS

EPA Science Inventory

The effect of substrate temperature and sputtering gas compositon on the structure and properties of chromium-chromium nitride films deposited on C-1040 steel using r.f. magnetron sputter deposition was investigated. X-ray diffraction analysis was used to determine the structure ...

Target Housing Material Options

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woloshun, Keith Albert

2016-02-11

With gas cooling, heat transfer coefficients are low compared to water. The benefit of gas from a heat transfer point of view is that there is really no upper temperature limit for the coolant, as compared to water, which is limited ultimately by the critical point, and in practice the critical heat flux. In our case with parallel flow channels, water is limited to even lower operating limits by nucleate boiling. So gas can get as hot as the containment material will allow, but to get the density and heat transfer up to something reasonable, we must also increase pressure,more » thus increasing stress on the containment, namely the front and back faces. We are designing to ASME BPVC, which, for most materials allows a maximum stress of UTS/3. So we want the highest possible UTS. For reference, the front face stress in the 12 mm target at 300 psi was about 90 MPa. The inconel 718 allowable stress at 900°C is 1/3 of 517 or 172 MPa. So we are in a very safe place, but the uTS is dropping rapidly with temperature above 900°C. As we increase target diameter, the challenge will be to keep the stress down. We are probably looking at keeping the allowable at or above the present value, and at as high a temperature as possible.« less

Electronic sputtering of LiF, CaF2, LaF3 and UF4 with 197 MeV Au ions. Is the stoichiometry of atom emission preserved?

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Muller, D.; Trautmann, C.

2017-09-01

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. Four different fluoride targets, LiF, CaF2, LaF3 and UF4 were irradiated in the electronic energy loss regime using 197 MeV Au ions. The angular distribution of particles sputtered from the surface of freshly cleaved LiF and CaF2 single crystals is composed of a broad cosine distribution superimposed by a jet-like peak that appears perpendicular to the surface independent of the angle of beam incidence. For LiF, the particle emission in the entire angular distribution (jet plus broad cosine component) is stoichiometric, whereas for CaF2 the ratio of the sputtered F to Ca particles is at large angles by a factor of two smaller than the stoichiometry of the crystal. For single crystalline LaF3 no jet component is observed and the angular distribution is non-stoichiometric with the number of sputtered F particles being slightly larger than the number of sputtered La particles. In the case of UF4, the target was polycrystalline and had a much rougher surface compared to cleaved crystals. This destroys the appearance of a possible jet component leading to a broad angular distribution. The ratio of sputtered U atoms compared to F atoms is in the order of 1-2, i.e. the number of collected particles on the catcher is also non-stoichiometric. Such unlike behavior of particles sputtered from different fluoride crystals creates new questions.

Effects of Surface Roughness and Aging on the Electrical Contact Resistance and Residual Stress in Gold-Nickel-Copper Connector Materials

DTIC Science & Technology

2014-12-01

with nickel coatings can result in compressive stresses, and the deposition of gold with small amounts of cobalt increase the coating hardness/wear...magnetic metal. In the literature, there are a few different approaches to allow for the sputter deposition of magnetic materials including: doping ...the target (i.e., nickel doped with vanadium, typically on the order of 7- 9% [19]) to the point that it is no longer magnetic, heating the target

Growth and characterization of high quality ZnS thin films by RF sputtering

NASA Astrophysics Data System (ADS)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Sputtering of rough surfaces: a 3D simulation study

NASA Astrophysics Data System (ADS)

von Toussaint, U.; Mutzke, A.; Manhard, A.

2017-12-01

The lifetime of plasma-facing components is critical for future magnetic confinement fusion power plants. A key process limiting the lifetime of the first-wall is sputtering by energetic ions. To provide a consistent modeling of the sputtering process of realistic geometries, the SDTrimSP-code has been extended to enable the processing of analytic as well as measured arbitrary 3D surface morphologies. The code has been applied to study the effect of varying the impact angle of ions on rough surfaces on the sputter yield as well as the influence of the aspect ratio of surface structures on the 2D distribution of the local sputtering yields. Depending on the surface morphologies reductions of the effective sputter yields to less than 25% have been observed in the simulation results.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav; University of South Bohemia, Institute of Physics and Biophysics, Branisovska 31, 370 05 Ceske Budejovice; Herrendorf, Ann-Pierra

2012-11-01

This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a highmore » concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.« less

Material Targets for Scaling All-Spin Logic

NASA Astrophysics Data System (ADS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2016-01-01

All-spin-logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to nonvolatility, ultralow operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin-logic devices that can surpass the energy-delay performance of CMOS transistors. With validated stochastic nanomagnetic and vector spin-transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identify promising directions for material engineering and discovery focusing on the systematic scaling of magnetic anisotropy (Hk ) and saturation magnetization (Ms ), the use of perpendicular magnetic anisotropy, and the interface spin-mixing conductance of the ferromagnet-spin-channel interface (Gmix ). We provide systematic targets for scaling a spin-logic energy-delay product toward 2 aJ ns, comprehending the stochastic noise for nanomagnets.

Electric tunable behavior of sputtered lead barium zirconate thin films

NASA Astrophysics Data System (ADS)

Wu, Lin-Jung; Wu, Jenn-Ming; Huang, Hsin-Erh; Bor, Hui-Yun

2007-02-01

Lead barium zirconate (PBZ) films were grown on Pt /Ti/SiO2/Si substrates by rf-magnetron sputtering. The sputtered PBZ films possess pure perovskite phase, uniform microstructure, and excellent tunable behaviors. The tunability and loss tangent of sputtered PBZ films depend greatly on the oxygen mixing ratio (OMR). The optimal dielectric tunable behavior occurs in the PBZ films sputtered at 10% OMR. The sputtered PBZ film (10% OMR) possesses a value of figure of merit of 60, promising for frequency-agile applications. Bulk acoustic waves induced by electromechanical coupling occur at 2.72GHz, which is useful in fabricating filters and related devices in the microwave range.

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

NASA Astrophysics Data System (ADS)

de Castro, Marcelo S. B.; Ferreira, Carlos L.; de Avillez, Roberto R.

2013-09-01

Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon-oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure. X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from -0.02 to -2.51% K-1. Computational thermodynamics was used to simulate the phase diagram of the vanadium-oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.

Studies on RF sputtered (WO3)1-x (V2O5)x thin films for smart window applications

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Sivakumar, R.; Perumal, P.; Sanjeeviraja, C.

2016-05-01

V2O5 doped WO3 targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO3)1-x (V2O5)x were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Materials erosion and redeposition studies at the PISCES-facility: net erosion under redeposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirooka, Y.; Goebel, D.M.; Conn, R.W.

1986-05-01

Simultaneous erosion and redeposition of copper and 304 stainless steel under controlled and continuous plasma (D,He,Ar) bombardment has been investigated in the PISCES-facility, which generates typical edge-plasma conditions of magnetic fusion devices. The plasma bombardment conditions are: incident ion flux in the range from 10/sup 17/ to 10/sup 18/ ions/sec/cm/sup 2/, ion bombarding energy of 100 eV, electron temperature in the range from 5 to 15 eV, plasma density in the range from 10/sup 11/ to 10/sup 13/ cm/sup -3/, target temperature in the range from 300 to 900K, and the total ion fluence in the range from 10/sup 20/more » to 10/sup 22/ ions/cm/sup 2/. The net erosion yield under redeposition is found to be significantly smaller than the classical sputtering yield data. A first-order modeling is attempted to interpret the erosion and redeposition behavior of materials under plasma bombardment. It is pointed out both theoretically and experimentally that the mean free path for electron impact ionization of the sputtered material is the key parameter to control the overall mechanism of erosion and redeposition. Strongly modified surface morphologies of bombarded targets are observed and indicate a retrapping effect.« less

Electron reflection and secondary emission characteristics of sputter-textured pyrolytic graphite surfaces

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Curren, A. N.; Sovey, J. S.

1981-01-01

Measurements are presented of secondary electron emission and reflected primary electron characteristics of sputter-textured pyrolitic graphite surfaces with microstructures of various sizes and densities, made with an Auger cylindrical mirror analyzer in a high-vacuum chamber at pressures below 1.33 x 10 to the -7th N/sq m (10 to the -9th torr). A dense, tall, thin, spire-like microstructure, obtained at ion energies of 1000 eV and ion current densities of 5 mA/sq cm, is the most effective. The secondary electron emission from such a surface is lower than that of soot, whose secondary emission is among the lowest of any material. At a primary electron energy of 1000 eV, the secondary electron emission yield of smooth CU is about 350% greater than the lowest value obtained for sputter-textured pyrolitic graphite. The reflected primary electron index of smooth Cu is a factor of 80 greater. If the secondary electron emission yield is reduced to 0.3, which is possible with sputter-textured pyrolitic graphite, the traveling wave tube collector efficiency could be improved by as much as 4% over that for smooth copper.

Piezoelectric Behaviour of Sputtered Aluminium Nitride Thin Film for High Frequency Ultrasonic Sensors

NASA Astrophysics Data System (ADS)

Herzog, T.; Walter, S.; Bartzsch, H.; Gittner, M.; Gloess, D.; Heuer, H.

2011-06-01

Many new materials and processes require non destructive evaluation in higher resolutions by phased array ultrasonic techniques in a frequency range up to 250 MHz. This paper presents aluminium nitride, a promising material for the use as a piezoelectric sensor material in the considered frequency range, which contains the potential for high frequency phased array application in the future. This work represents the fundamental development of piezoelectric aluminium nitride films with a thickness of up to 10 μm. We have investigated and optimized the deposition process of the aluminium nitride thin film layers regarding their piezoelectric behavior. Therefore a specific test setup and a measuring station were created to determine the piezoelectric charge constant (d33) and the electro acoustic behavior of the sensor. Single element transducers were deposited on silicon substrates with aluminium electrodes for top and bottom, using different parameters for the magnetron sputter process, like pressure and bias voltage. Afterwards acoustical measurements up to 500 MHz in pulse echo mode have been carried out and the electrical and electromechanical properties were qualified. In two different parameter sets for the sputtering process excellent piezoelectric charge constant of about 8.0 pC/N maximum were obtained.

Fabrication of eco-friendly PNP transistor using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Harinee, N.; Purvaja, K.; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Venkateswaran, C.

2018-05-01

An effort has been made to fabricate a thin film transistor using eco-friendly oxide semiconductor materials. Oxide semiconductor materials are cost - effective, thermally and chemically stable with high electron/hole mobility. Copper (II) oxide is a p-type semiconductor and zinc oxide is an n-type semiconductor. A pnp thin film transistor was fabricated using RF magnetron sputtering. The films deposited have been subjected to structural characterization using AFM. I-V characterization of the fabricated device, Ag/CuO/ZnO/CuO/Ag, confirms transistor behaviour. The mechanism of electron/hole transport of the device is discussed below.

Purity of targets prepared on Cu substrates

NASA Astrophysics Data System (ADS)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Algan/Gan Hemt By Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Sputtering by the Solar Wind: Effects of Variable Composition

NASA Technical Reports Server (NTRS)

Killen, R. M.; Arrell, W. M.; Sarantos, M.; Delory, G. T.

2011-01-01

It has long been recognized that solar wind bombardment onto exposed surfaces in the solar system will produce an energetic component to the exospheres about those bodies. Laboratory experiments have shown that there is no increase in the sputtering yield caused by highly charged heavy ions for metallic and for semiconducting surfaces, but the sputter yield can be noticeably increased in the case of a good insulating surface. Recently measurements of the solar wind composition have become available. It is now known that the solar wind composition is highly dependent on the origin of the particular plasma. Using the measured composition of the slow wind, fast wind, solar energetic particle (SEP) population, and coronal mass ejection (CME), broken down into its various components, we have estimated the total sputter yield for each type of solar wind. Whereas many previous calculations of sputtering were limited to the effects of proton bombardment. we show that the heavy ion component. especially the He++ component. can greatly enhance the total sputter yield during times when the heavy ion population is enhanced. We will discuss sputtering of both neutrals and ions.

Studies of thin-film growth of sputtered hydrogenated amorphous silicon

NASA Astrophysics Data System (ADS)

Moustakas, T. D.

1982-11-01

The anticipated potential use of hydrogenated amorphous silicon (a-SiHx), or related materials, for large area thin film device applications has stimulated extensive research. Studies conducted by Ross and Messier (1981) have shown that the growth habit of the sputtered a-SiHx films is columnar. It is found that films produced at high argon pressure have columnar microstructure, while those produced at low argon pressure show no noticeable microstructure. The preferred interpretation for the lack of microstructure for the low argon pressure films is bombardment of the films by positive Ar(+) ions due to the substrate negative floating potential. Anderson et al. (1979) attribute the microstructural changes to the bombardment of the film by the neutral sputtered Si species from which the film grows. In connection with the present investigation, data are presented which clearly indicate that charged particle bombardment rather than neutral particle bombardment is the cause of the observed microstructural changes as a function of argon pressure.

Fabrication of nanobaskets by sputter deposition on porous substrates and uses thereof

NASA Technical Reports Server (NTRS)

Johnson, Paige Lea (Inventor); Teeters, Dale (Inventor)

2010-01-01

A method of producing a nanobasket and the applications or uses thereof. The method includes the steps of providing a substrate with at least one (1) pore having diameters of about one (1) nanometer to about ten (10) micrometers. Material is deposited by sputter-coating techniques along continuous edges of the pores to form a capped or partially capped nanotube or microtube structure, termed a nanobasket. Either a single material may be used to form nanobaskets over the pores or, alternately, a layered structure may be created wherein an initial material is deposited followed by one or more other materials to form nanobaskets over the pores.

Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

2012-01-01

Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

Effect of rapid thermal annealing on the electrical, optical and structural properties of ZnO-doped In2O3 films grown by linear facing target sputtering.

PubMed

Cho, Chung-Ki; Kim, Han-Ki

2012-04-01

We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2, flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.

Cu self-sputtering MD simulations for 0.1-5 keV ions at elevated temperatures

NASA Astrophysics Data System (ADS)

Metspalu, Tarvo; Jansson, Ville; Zadin, Vahur; Avchaciov, Konstantin; Nordlund, Kai; Aabloo, Alvo; Djurabekova, Flyura

2018-01-01

Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper with ion energies of 0.1-5 keV. We analyze all three low-index surfaces of Cu, {1 0 0}, {1 1 0} and {1 1 1}, held at different temperatures, 300 K, 500 K and 1200 K. The surface roughness relief is studied by either varying the angle of incidence on flat surfaces, or by using arbitrary roughened surfaces, which result in a more natural distribution of surface relief variations. Our simulations provide detailed characterization of copper self-sputtering with respect to different material temperatures, crystallographic orientations, surface roughness, energies, and angles of ion incidence.

Sensitivity of WallDYN material migration modeling to uncertainties in mixed-material surface binding energies

DOE PAGES

Nichols, J. H.; Jaworski, M. A.; Schmid, K.

2017-03-09

The WallDYN package has recently been applied to a number of tokamaks to self-consistently model the evolution of mixed-material plasma facing surfaces. A key component of the WallDYN model is the concentration-dependent surface sputtering rate, calculated using SDTRIM.SP. This modeled sputtering rate is strongly influenced by the surface binding energies (SBEs) of the constituent materials, which are well known for pure elements but often are poorly constrained for mixed-materials. This work examines the sensitivity of WallDYN surface evolution calculations to different models for mixed-material SBEs, focusing on the carbon/lithium/oxygen/deuterium system present in NSTX. A realistic plasma background is reconstructed frommore » a high density, H-mode NSTX discharge, featuring an attached outer strike point with local density and temperature of 4 × 10 20 m -3 and 4 eV, respectively. It is found that various mixed-material SBE models lead to significant qualitative and quantitative changes in the surface evolution profile at the outer divertor, with the highest leverage parameter being the C-Li binding model. Uncertainties of order 50%, appearing on time scales relevant to tokamak experiments, highlight the importance of choosing an appropriate mixed-material sputtering representation when modeling the surface evolution of plasma facing components. Lastly, these results are generalized to other fusion-relevant materials with different ranges of SBEs.« less

Sensitivity of WallDYN material migration modeling to uncertainties in mixed-material surface binding energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nichols, J. H.; Jaworski, M. A.; Schmid, K.

The WallDYN package has recently been applied to a number of tokamaks to self-consistently model the evolution of mixed-material plasma facing surfaces. A key component of the WallDYN model is the concentration-dependent surface sputtering rate, calculated using SDTRIM.SP. This modeled sputtering rate is strongly influenced by the surface binding energies (SBEs) of the constituent materials, which are well known for pure elements but often are poorly constrained for mixed-materials. This work examines the sensitivity of WallDYN surface evolution calculations to different models for mixed-material SBEs, focusing on the carbon/lithium/oxygen/deuterium system present in NSTX. A realistic plasma background is reconstructed frommore » a high density, H-mode NSTX discharge, featuring an attached outer strike point with local density and temperature of 4 × 10 20 m -3 and 4 eV, respectively. It is found that various mixed-material SBE models lead to significant qualitative and quantitative changes in the surface evolution profile at the outer divertor, with the highest leverage parameter being the C-Li binding model. Uncertainties of order 50%, appearing on time scales relevant to tokamak experiments, highlight the importance of choosing an appropriate mixed-material sputtering representation when modeling the surface evolution of plasma facing components. Lastly, these results are generalized to other fusion-relevant materials with different ranges of SBEs.« less

Proposed industrial recoverd materials utilization targets for the textile mill products industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1979-05-01

Materials recovery targets were established to represent the maximum technically and economically feasible increase in the use of energy-saving materials by January 1, 1987. This report describes targets for the textile industry and describes how those targets were determined. (MCW)

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications.

PubMed

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-22

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

NASA Astrophysics Data System (ADS)

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE PAGES

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; ...

2017-02-10

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Tin Sulfide Phase Exploration: Dependence of Optoelectronic Properties on Microstructural Growth and Chemical Variations in Thin Film Material

NASA Astrophysics Data System (ADS)

Banai, Rona Elinor

Herzenbergite tin (II) monosulfide (alpha-SnS) is of growing interest as a photovoltaic material because of its interesting optoelectronic properties and Earth abundance. It has several stable phases due to the dual valency of tin. As a layered material, alpha-SnS has the ability to form varying microstructure with differing properties. For this dissertation, films were RF sputtered from a SnS and SnS2 target to produce films with varying microstructure. Growth of high energy phases includin beta-SnS and amorphous SnS2 were possible through sputtering. Films of mixed or strained phase resulted from both targets. Pure phase alpha-SnS was made by annealing amorphous SnS2 films. Microstructure was measured using grazing incidence XRD and field emission SEM. The impact of microstructure was seen for both optical and electronic properties. Films were evaluated using spectroscopic ellipsometry as well as unpolarized UV-Vis transmission and reflection measurements. Optical modeling of the films is sufficient for developing models corresponding to specific microstructure, enabling it to be an inexpensive tool for studying the material. Absorption coefficient and band gap were also derived for these films. Films deposited with the SnS target had resistivity values up to 20,000 O-cm. Annealing of amorphous films deposited from the SnS2 target resulted in alpha-SnS films with much lower resistivity (<50 O-cm) values. This method for producing alpha-SnS offered better control of the phase, microstructure and therefore optoelectronic properties. While SnS films made from either target were typically p-type, sputtering of the SnS2 target with substrate heating resulted in n-type SnSx of a potentially new phase similar to SnS2 but with a 2:3 tin-to-sulfur ratio. Resistivity of those films typically ranged from 1 to 40 O-cm. Both p- and n-type films made from the SnS2 target had high carrier concentration of 10 17 to 1020 cm-3, but films had low Hall mobility such that

Developing Culturally Targeted Diabetes Educational Materials for Older Russian-Speaking Immigrants.

PubMed

Van Son, Catherine R

2014-07-01

Older adults who immigrate late in life face many challenges adapting to a new country. Immigrants bring their cultural beliefs and behaviors with them, which can influence their ability to make dietary changes required when they have type 2 diabetes. Culturally targeted patient education materials are needed to improve immigrants' health literacy and abilities to self-manage diabetes. Currently, there is a scarcity of diabetes patient education materials to meet the educational needs of the Russian-speaking immigrant group. The purpose of this article is to describe a project in which culturally targeted diabetes education materials for older Russian-speaking immigrants were designed and developed. Culturally targeted patient education materials are essential if they are to be accepted and used by clients from different ethnic minority populations. The creation of culturally relevant materials requires a team effort and community stakeholder input. The availability of materials on the internet facilitates access and use by health care providers. Culturally targeted education materials are an important component in addressing health literacy in ethnic minority populations. Next steps require that these materials be evaluated to test their impact on diabetes self-management behaviors and clinical outcomes such as adherence, amount of physical activity, and blood glucose levels. © 2014 The Author(s).

Research and development on materials for the SPES target

NASA Astrophysics Data System (ADS)

Corradetti, Stefano; Andrighetto, Alberto; Manzolaro, Mattia; Scarpa, Daniele; Vasquez, Jesus; Rossignoli, Massimo; Monetti, Alberto; Calderolla, Michele; Prete, Gianfranco

2014-03-01

The SPES project at INFN-LNL (Istituto Nazionale di Fisica Nucleare - Laboratori Nazionali di Legnaro) is focused on the production of radioactive ion beams. The core of the SPES facility is constituted by the target, which will be irradiated with a 40 MeV, 200 µA proton beam in order to produce radioactive species. In order to efficiently produce and release isotopes, the material constituting the target should be able to work under extreme conditions (high vacuum and temperatures up to 2000 °C). Both neutron-rich and proton-rich isotopes will be produced; in the first case, carbon dispersed uranium carbide (UCx) will be used as a target, whereas to produce p-rich isotopes, several types of targets will have to be irradiated. The synthesis and characterization of different types of material will be reported. Moreover, the results of irradiation and isotopes release tests on different uranium carbide target prototypes will be discussed.

High-Throughput Experimental Approach Capabilities | Materials Science |

Science.gov Websites

NREL High-Throughput Experimental Approach Capabilities High-Throughput Experimental Approach by yellow and is for materials in the upper right sector. NREL's high-throughput experimental ,Te) and oxysulfide sputtering Combi-5: Nitrides and oxynitride sputtering We also have several non

Characterization and fabrication of target materials for RIB generation

NASA Astrophysics Data System (ADS)

Welton, R. F.; Janney, M. A.; Mueller, P. E.; Ortman, W. K.; Rauniyar, R.; Stracener, D. W.; Williams, C. L.

2001-07-01

This report discusses two techniques developed at the Oak Ridge National Laboratory (ORNL) that are employed for the fabrication and characterization of targets used in the production of Radioactive Ion Beams (RIBs). First, our method of in-house fabrication of uranium carbide targets is discussed. We have found that remarkably uniform coatings of UC2 can be formed on the microstructure of porous C matrices. The technique has been used to form UC2 layers on highly thermally conductive graphitic foams. Targets fabricated in this fashion have been tested under low-intensity proton bombardment and yields of selected radioactive species are reported. This report also describes an off-line test stand for the investigation of effusive and diffusive transport in RIB target/ion sources. Permeation rates of gases and vapors passing through a high temperature membrane or through an effusive channel constructed from the material under investigation are recorded. Diffusion coefficients and adsorption enthalpies, which characterize the interaction of RIB species with materials of the target/ion source, are extracted from the time profile of the recorded data. Examples of diffusion, effusion, and conductance measurements are provided.

Porous, High Capacity Coatings for Solid Phase Microextraction by Sputtering.

PubMed

Diwan, Anubhav; Singh, Bhupinder; Roychowdhury, Tuhin; Yan, DanDan; Tedone, Laura; Nesterenko, Pavel N; Paull, Brett; Sevy, Eric T; Shellie, Robert A; Kaykhaii, Massoud; Linford, Matthew R

2016-02-02

We describe a new process for preparing porous solid phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers. The microstructure of these coatings is a function of the substrate geometry and mean free path of the silicon atoms, and the coating thickness is controlled by the sputtering time. Sputtered silicon structures on silica fibers were treated with piranha solution (a mixture of concd H2SO4 and 30% H2O2) to increase the concentration of silanol groups on their surfaces, and the nanostructures were silanized with octadecyldimethylmethoxysilane in the gas phase. The attachment of this hydrophobic ligand was confirmed by X-ray photoelectron spectroscopy and contact angle goniometry on model, planar silicon substrates. Sputtered silicon coatings adhered strongly to their surfaces, as they were able to pass the Scotch tape adhesion test. The extraction time and temperature for headspace extraction of mixtures of alkanes and alcohols on the sputtered fibers were optimized (5 min and 40 °C), and the extraction performances of SPME fibers with 1.0 or 2.0 μm of sputtered silicon were compared to those from a commercial 7 μm poly(dimethylsiloxane) (PDMS) fiber. For mixtures of alcohols, aldehydes, amines, and esters, the 2.0 μm sputtered silicon fiber yielded signals that were 3-9, 3-5, 2.5-4.5, and 1.5-2 times higher, respectively, than those of the commercial fiber. For the heavier alkanes (undecane-hexadecane), the 2.0 μm sputtered fiber yielded signals that were approximately 1.0-1.5 times higher than the commercial fiber. The sputtered fibers extracted low molecular weight analytes that were not detectable with the commercial fiber. The selectivity of the sputtered fibers appears to favor analytes that have both a hydrophobic component and hydrogen-bonding capabilities. No detectable carryover between runs was noted for the sputtered fibers. The repeatability (RSD%) for a fiber (n = 3) was less than 10% for all analytes tested

Radiological assessment of target materials for accelerator transmutation of waste (ATW) applications

NASA Astrophysics Data System (ADS)

Vickers, Linda Diane

This dissertation issues the first published document of the radiation absorbed dose rate (rad-h-1) to tissue from radioactive spallation products in Ta, W, Pb, Bi, and LBE target materials used in Accelerator Transmutation of Waste (ATW) applications. No previous works have provided an estimate of the absorbed dose rate (rad-h-1) from activated targets for ATW applications. The results of this dissertation are useful for planning the radiological safety assessment to personnel, and for the design, construction, maintenance, and disposition of target materials of high-energy particle accelerators for ATW applications (Charlton, 1996). In addition, this dissertation provides the characterization of target materials of high-energy particle accelerators for the parameters of: (1) spallation neutron yield (neutrons/proton), (2) spallation products yield (nuclides/proton), (3) energy-dependent spallation neutron fluence distribution, (4) spallation neutron flux, (5) identification of radioactive spallation products for consideration in safety of personnel to high radiation dose rates, and (6) identification of the optimum geometrical dimensions for the target applicable to the maximum radial spallation neutron leakage from the target. Pb and Bi target materials yielded the lowest absorbed dose rates (rad-h -1) for a 10-year irradiation/50-year decay scheme, and would be the preferred target materials for consideration of the radiological safety of personnel during ATW operations. A beneficial characteristic of these target materials is that they do not produce radioactive transuranic isotopes, which have very long half-lives and require special handling and disposition requirements. Furthermore, the targets are not considered High-Level Waste (HLW) such as reactor spent fuel for disposal purposes. It is a basic ATW system requirement that the spallation target after it has been expended should be disposable as Class C low-level radioactive waste. Therefore, the disposal

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

2012-02-01

In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

PubMed Central

Jurgeleit, Till; Quandt, Eckhard; Zamponi, Christiane

2017-01-01

Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ geometrically

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Angular and velocity distributions of tungsten sputtered by low energy argon ions

NASA Astrophysics Data System (ADS)

Marenkov, E.; Nordlund, K.; Sorokin, I.; Eksaeva, A.; Gutorov, K.; Jussila, J.; Granberg, F.; Borodin, D.

2017-12-01

Sputtering by ions with low near-threshold energies is investigated. Experiments and simulations are conducted for tungsten sputtering by low-energy, 85-200 eV Ar atoms. The angular distributions of sputtered particles are measured. A new method for molecular dynamics simulation of sputtering taking into account random crystallographic surface orientation is developed, and applied for the case under consideration. The simulations approximate experimental results well. At low energies the distributions acquire "butterfly-like" shape with lower sputtering yields for close to normal angles comparing to the cosine distribution. The energy distributions of sputtered particles were simulated. The Thompson distribution remains valid down to near-threshold 85 eV case.

Boron-rich plasma by high power impulse magnetron sputtering of lanthanum hexaboride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oks, Efim M.; Anders, Andre

2012-10-15

Boron-rich plasmas have been obtained using a LaB{sub 6} target in a high power impulse sputtering (HiPIMS) system. The presence of {sup 10}B{sup +}, {sup 11}B{sup +}, Ar{sup 2+}, Ar{sup +}, La{sup 2+}, and La{sup +} and traces of La{sup 3+}, {sup 12}C{sup +}, {sup 14}N{sup +}, and {sup 16}O{sup +} have been detected using an integrated mass and energy spectrometer. Peak currents as low as 20 A were sufficient to obtain plasma dominated by {sup 11}B{sup +} from a 5 cm planar magnetron. The ion energy distribution function for boron exhibits an energetic tail extending over several 10 eV,more » while argon shows a pronounced peak at low energy (some eV). This is in agreement with models that consider sputtering (B, La) and gas supply (from background and 'recycling'). Strong voltage oscillations develop at high current, greatly affecting power dissipation and plasma properties.« less

Tuning of the magnetization dynamics in as-sputtered FeCoSiN thin films by various sputtering gas pressures

NASA Astrophysics Data System (ADS)

Xu, Feng; Phuoc, N. N.; Zhang, Xiaoyu; Ma, Yungui; Chen, Xin; Ong, C. K.

2008-11-01

In this work, we investigate the influence of various sputtering gas pressures on the high-frequency magnetization dynamics in as-sputtered FeCoSiN granular thin films. The permeability spectra are measured with the shorted microstrip transmission-line perturbation method and analyzed with the Landau-Lifshitz-Gilbert equation. The dependence of the effective damping coefficient on the external fields is fitted with a power law. The measurement and fitting results show that both the effective and the intrinsic damping coefficients in the magnetization dynamics can be conveniently and effectively tuned by changing the sputtering gas pressure. The physical origin of the influences is suggested to be related to the stress in the films.

Depth resolution and preferential sputtering in depth profiling of sharp interfaces

NASA Astrophysics Data System (ADS)

Hofmann, S.; Han, Y. S.; Wang, J. Y.

2017-07-01

The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16-84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16-84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

Nanopatterning of swinging substrates by ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, whichmore » have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.« less

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

NASA Astrophysics Data System (ADS)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Nylon-sputtered nanoparticles: fabrication and basic properties

NASA Astrophysics Data System (ADS)

Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

2012-12-01

Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

2013-06-01

Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

Synthesis and characterization of sputtered titanium nitride as a nucleation layer for novel neural electrode coatings

NASA Astrophysics Data System (ADS)

Sait, R. A.; Cross, R. B. M.

2017-12-01

A growing demand for chronically implantable electrodes has led to a search for the most suitable neural electrode interface material. Nobel metals such as platinum (Pt) are inadequate for electrode/neuron interfaces at small scales due to their poor electrochemical properties, low charge injection and high charge density per unit area. Titanium nitride (TiN) has been implemented in neural electrodes application due to its outstanding properties. In this work, TiNx films were deposited by non-reactive radio frequency (RF) magnetron sputtering towards the development of a novel TiN nanowires (NWs) neural interface. Although, there is substantial work on this material, its growth using non-reactive RF magnetron sputtering has not been reported previously and optimised towards the growth of TiN NWs and their use in neural interface applications. The sputtering parameters of RF power and argon (Ar) flow rate were varied in order to investigate their effects on the structural, electrical and electrochemical properties of the TiN films. A dense film morphology was observed in the scanning electron microscopy (SEM) images of TiN thin films showing a columnar structure. The film preferential orientation was changed between (200) and (111) with Ar flow rate due to the variation of the kinetic energy (KE) of the sputtered atoms. The crystallites size obtained were in the range of 13-95 nm. Surface roughness was found to increase from 0.69 to 1.95 nm as Ar flow rate increased. TiNx films showed a good electrical resistivity of 228 μΩ cm. Stoichiometry was found to vary with sputtering conditions in which the nitrogen content was found to deplete from the film at low Ar flow rate. The electrochemical behaviour of TiN films were characterised and the highest capacitance value obtained was 0.416 mF/cm2. From the results, it can be suggested that TiN thin film can be easily optimised to act as a nucleation layer for the growth of nanowires.

Ferromagnetic resonance of facing-target sputtered epitaxial γ‧-Fe4N films: the influence of thickness and substrates

NASA Astrophysics Data System (ADS)

Lai, Zhengxun; Li, Zirun; Liu, Xiang; Bai, Lihui; Tian, Yufeng; Mi, Wenbo

2018-06-01

The microstructure and high frequency properties of facing-target sputtered epitaxial γ‧-Fe4N films were investigated in detail. It was found that the eddy current in ultrathin γ‧-Fe4N films is too small to influence the ferromagnetic resonance (FMR) linewidth, where the linewidth is mostly determined by intrinsic damping and the two-magnon scattering (TMS) process. In relatively thick films, the TMS process can significantly affect the linewidth due to the roughness on the sample surface. However, the TMS process in a thin film is quite weak because of its smooth surface. The Gilbert damping constant of about 0.0135 in our γ‧-Fe4N films is smaller than the experimental value in the previous work. Moreover, substrates can also influence the FMR linewidth of the γ‧-Fe4N films by the TMS process. Besides, the resonance field of polycrystalline γ‧-Fe4N film is larger than the epitaxial ones because of the lack of a magnetic anisotropic field, but the linewidth of the polycrystalline γ‧-Fe4N film is smaller.

Microstructural and wear properties of sputtered carbides and silicides

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

The corrosivity and passivity of sputtered Mg-Ti alloys

DOE PAGES

Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; ...

2015-11-30

Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide filmmore » was formed on a sputtered Ti–Mg based alloy.« less

The new applications of sputtering and ion plating

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.

Unified analytic representation of physical sputtering yield

NASA Astrophysics Data System (ADS)

Janev, R. K.; Ralchenko, Yu. V.; Kenmotsu, T.; Hosaka, K.

2001-03-01

Generalized energy parameter η= η( ɛ, δ) and normalized sputtering yield Ỹ(η) , where ɛ= E/ ETF and δ= Eth/ ETF, are introduced to achieve a unified representation of all available experimental and sputtering data at normal ion incidence. The sputtering data in the new Ỹ(η) representation retain their original uncertainties. The Ỹ(η) data can be fitted to a simple three-parameter analytic expression with an rms deviation of 32%, well within the uncertainties of original data. Both η and Ỹ(η) have correct physical behavior in the threshold and high-energy regions. The available theoretical data produced by the TRIM.SP code can also be represented by the same single analytic function Ỹ(η) with a similar accuracy.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Dissanayake, A.; AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Taibu, R.; Tecos, G.; Hamdan, N. M.; Kayani, A.

2011-06-01

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 °C in vacuum.

Modeling of hydrocarbon sputtering in Tore Supra

NASA Astrophysics Data System (ADS)

Hogan, J.; Gauthier, E.; Cambe, A.; Layet, J.-M.

2002-11-01

The use of carbon in fusion devices introduces problems of erosion and tritium retention which are related to chemical sputtering. The in-situ chemical sputtering yield of carbon has recently been measured in a well-diagnosed SOL plasma near the neutralizer plate in the Tore-Supra Outboard Pump Limiter. Methane and heavier hydrocarbon (C2DX and C3DY) emission has been measured in ohmic and lower hybrid heated discharges, using mass and optical molecular spectroscopy [1]. The Monte Carlo code BBQ has been used both to validate the method used to obtain the sputtering yields, and for direct comparison with available values reported for accelerator-based sputtering yields. A comparison with predicted surface temperature and particle flux dependence is also presented, for both CD4 and the heavier hydrocarbon yields. The particle flux dependence comparison is found to be complex, since changes in mean free path also accompany variation in particle flux. For the temperature dependence of methane erosion, the Roth annealing model is found to provide a better fit than the hydrogenation-moderated model. [1] A. Cambe, thesis, 2002; ORNL: Supported by U.S.DOE Contract DE-AC05-00OR22725

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Sputtered protective coatings for die casting dies

NASA Technical Reports Server (NTRS)

Mirtich, M. J.; Nieh, C.-Y.; Wallace, J. F.

1981-01-01

Three experimental research designs investigating candidate materials and processes involved in protective die surface coating procedures by sputter deposition, using ion beam technologies, are discussed. Various pre-test results show that none of the coatings remained completely intact for 15,000 test cycles. The longest lifetime was observed for coatings such as tungsten, platinum, and molybdenum which reduced thermal fatigue, but exhibited oxidation and suppressed crack initiation only as long as the coating did not fracture. Final test results confirmed earlier findings and coatings with Pt and W proved to be the candidate materials to be used on a die surface to increase die life. In the W-coated specimens, which remained intact on the surface after thermal fatigue testing, no oxidation was found under the coating, although a few cracks formed on the surface where the coating broke down. Further research is planned.

Mechanism of chemical sputtering of graphite under high flux deuterium bombardment

NASA Astrophysics Data System (ADS)

Ueda, Y.; Sugai, T.; Ohtsuka, Y.; Nishikawa, M.

2000-12-01

Chemical sputtering of graphite materials (isotropic graphite and carbon fiber composite) was studied by irradiation of 5 keV D 3+ beam with a flux up to 4×10 21 m-2 s-1, which is more than one order magnitude higher than previous low flux beam experiments (< 10 20 m-2 s-1) . The chemical sputtering yield was obtained from measurements of the released methane signal with a quadrupole mass analyser. It was found that the methane yield at peak temperatures is almost independent of flux from 5×10 20 to 4×10 21 m-2 s-1. Peak temperatures range between 900 and 1000 K, which is higher than those of the previous low flux experiments (<900 K, <10 20 m-2 s-1) . By comparing our experimental results with calculation results based on Roth's model, the annealing effect of radiation damage to prevent methyl group formation appears to be unimportant.

Adherence of sputtered titanium carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1979-01-01

The study searches for interface treatment that would increase the adhesion of TiC coating to nickel- and titanium-base alloys. Rene 41 (19 wt percent Cr, 11 wt percent Mo, 3 wt percent Ti, balance Ni) and Ti-6Al-4V (6 wt percent Al, 4 wt percent V, balance Ti) are considered. Adhesion of the coatings is evaluated in pin-and disk friction tests. The coatings and interface regions are examined by X-ray photoelectron spectroscopy. Results suggest that sputtered refractory compound coatings adhere best when a mixed compound of coating and substrate metals is formed in the interfacial region. The most effective type of refractory compound interface appears to depend on both substrate and coating material. A combination of metallic interlayer deposition and mixed compound interface formation may be more effective for some substrate coating combinations than either alone.

Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

PubMed

Timilsina, Rajendra; Rack, Philip D

2013-12-13

A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

Investigation of Structural, Compositional and Anti-Microbial Properties of Copper Thin Film Using Direct Current Magnetron Sputtering for Surgical Instruments

NASA Astrophysics Data System (ADS)