The structure of {sup 117}Te and {sup 118}Te and collectivity in {sup 118}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duyar, C.; Draper, J.E.; Rubel, E.C.

1993-10-01

The reactions {sup 82}Se({sup 40}Ar,5n) and {sup 76}Ge({sup 48}Ca, 6 n) (beam energies 180MeV and 190MeV, respectively) were used to populate high spins states of {sup 117}Te and {sup 118}Te, respectively. {gamma} - {gamma} coincidences, E{sub gamma}, and coincidence I{sub gamma} have been measured. Angular correlation/distribution analysis has been made. {sup 117}Te has been extended to spin {approximately} 51/2. Our results do not support the two isolated bands found by Sharma et al. {sup 118}Te has been also extended to spin {approximately}22. A rotational band was found in {sup 118}Te with an average J {approximately}42h{sup 2}/MeV, corresponding to a {Beta}more » {approximately} 0.2.« less

Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kumagai, Y.; Imada, S.; Baba, T.; Kobayashi, M.

2011-05-01

ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between ZnTe and ZnMgTe was not negligible, the critical layer thickness (CLT) was theoretically derived. Structures with varying Mg composition and layer thickness of ZnMgTe cladding layer were grown and examined for crystal quality with respect to theoretical data. The crystal quality was investigated by means of cross sectional transmission electron microscopy (TEM) and reciprocal space mapping (RSM). Optical confinements were observed by irradiating a laser beam from one end of the sample and monitoring the transmitted light from the other end.

Synthesis, structural characterization and biological activity of two diastereomeric JA-Ile macrolactones.

PubMed

Jimenez-Aleman, Guillermo H; Machado, Ricardo A R; Görls, Helmar; Baldwin, Ian T; Boland, Wilhelm

2015-06-07

Jasmonates are phytohormones involved in a wide range of plant processes, including growth, development, senescence, and defense. Jasmonoyl-L-isoleucine (JA-Ile, 2), an amino acid conjugate of jasmonic acid (JA, 1), has been identified as a bioactive endogenous jasmonate. However, JA-Ile (2) analogues trigger different responses in the plant. ω-Hydroxylation of the pentenyl side chain leads to the inactive 12-OH-JA-Ile (3) acting as a “stop” signal. On the other hand, a lactone derivative of 12-OH-JA (5) (jasmine ketolactone, JKL) occurs in nature, although with no known biological function. Inspired by the chemical structure of JKL (6) and in order to further explore the potential biological activities of 12-modified JA-Ile derivatives, we synthesized two macrolactones (JA-Ile-lactones (4a) and (4b)) derived from 12-OH-JA-Ile (3). The biological activity of (4a) and (4b) was tested for their ability to elicit nicotine production, a well-known jasmonate dependent secondary metabolite. Both macrolactones showed strong biological activity, inducing nicotine accumulation to a similar extent as methyl jasmonate does in Nicotiana attenuata leaves. Surprisingly, the highest nicotine contents were found in plants treated with the JA-Ile-lactone (4b), which has (3S,7S) configuration at the cyclopentanone not known from natural jasmonates. Macrolactone (4a) is a valuable standard to explore for its occurrence in nature.

Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

NASA Astrophysics Data System (ADS)

Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

2018-02-01

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

Pulsar TeV Halos Explain the Diffuse TeV Excess Observed by Milagro.

PubMed

Linden, Tim; Buckman, Benjamin J

2018-03-23

Milagro observations have found bright, diffuse TeV emission concentrated along the galactic plane of the Milky Way. The intensity and spectrum of this emission is difficult to explain with current models of hadronic γ-ray production, and has been named the "TeV excess." We show that TeV emission from pulsars naturally explains this excess. Recent observations have detected "TeV halos" surrounding pulsars that are either nearby or particularly luminous. Extrapolating this emission to the full population of Milky Way pulsars indicates that the ensemble of "subthreshold" sources necessarily produces bright TeV emission diffusively along the Milky Way plane. Models indicate that the TeV halo γ-ray flux exceeds that from hadronic γ rays above an energy of ∼500  GeV. Moreover, the spectrum and intensity of TeV halo emission naturally matches the TeV excess. Finally, we show that upcoming HAWC observations will resolve a significant fraction of the TeV excess into individual TeV halos, conclusively confirming, or ruling out, this model.

Endogenous Bioactive Jasmonate Is Composed of a Set of (+)-7-iso-JA-Amino Acid Conjugates1

PubMed Central

Li, Suhua; Li, Yuwen; Chen, Juan; Yang, Mai; Tong, Jianhua; Xiao, Langtao; Nan, Fajun; Xie, Daoxin

2016-01-01

Jasmonates (JAs) regulate a wide range of plant defense and development processes. The bioactive JA is perceived by its receptor COI1 to trigger the degradation of JASMONATE ZIM-DOMAIN (JAZ) proteins and subsequently derepress the JAZ-repressed transcription factors for activation of expression of JA-responsive genes. So far, (+)-7-iso-JA-l-Ile has been the only identified endogenous bioactive JA molecule. Here, we designed coronafacic acid (CFA) conjugates with all the amino acids (CFA-AA) to mimic the JA amino acid conjugates, and revealed that (+)-7-iso-JA-Leu, (+)-7-iso-JA-Val, (+)-7-iso-JA-Met, and (+)-7-iso-JA-Ala are new endogenous bioactive JA molecules. Furthermore, our studies uncover the general characteristics for all the bioactive JA molecules, and provide a new strategy to synthetically generate novel active JA molecules. PMID:27756820

Thermal conductivity studies of CdZnTe with varying Te excess

DOE PAGES

Jackson, Maxx; Bennett, Brittany; Giltnane, Dustin; ...

2016-08-28

Cadmium Zine Telluride (CZT) has been extensively studied as a room temperature semiconductor gamma radiation detector. CZT continues to show promise as a bulk and pixelated gamma spectrometer with less than one percent energy resolution; however the fabrication costs are high. Improved yields of high quality, large CZT spectroscopy grade crystals must be achieved. CZT is grown by the Traveling Heater Method (THM) with a Te overpressure to account for vaporization losses. This procedure creates Te rich zones. During growth, boules will often cleave limiting the number of harvestable crystals. As a result, crystal growth parameter optimization was evaluated bymore » modeling the heat flow within the system. Interestingly, Cadmium Telluride (CdTe) is used as a thermal conductivity surrogate in the absence of a thorough study of the CZT thermal properties. The current study has measured the thermal conductivity of CZT pressed powders with varying Te concentrations from 50-100% over 25-800°C to understand the variation in this parameter from CdTe. Cd0.9Zn0.1Te1.0 is the base CZT (designated 50%). CZT exhibits a thermal conductivity of nearly 1 W/mK, an order of magnitude greater than CdTe. Lastly, the thermal conductivity decreased with increasing Te concentration.« less

Thermal conductivity studies of CdZnTe with varying Te excess

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jackson, Maxx; Bennett, Brittany; Giltnane, Dustin

Cadmium Zine Telluride (CZT) has been extensively studied as a room temperature semiconductor gamma radiation detector. CZT continues to show promise as a bulk and pixelated gamma spectrometer with less than one percent energy resolution; however the fabrication costs are high. Improved yields of high quality, large CZT spectroscopy grade crystals must be achieved. CZT is grown by the Traveling Heater Method (THM) with a Te overpressure to account for vaporization losses. This procedure creates Te rich zones. During growth, boules will often cleave limiting the number of harvestable crystals. As a result, crystal growth parameter optimization was evaluated bymore » modeling the heat flow within the system. Interestingly, Cadmium Telluride (CdTe) is used as a thermal conductivity surrogate in the absence of a thorough study of the CZT thermal properties. The current study has measured the thermal conductivity of CZT pressed powders with varying Te concentrations from 50-100% over 25-800°C to understand the variation in this parameter from CdTe. Cd0.9Zn0.1Te1.0 is the base CZT (designated 50%). CZT exhibits a thermal conductivity of nearly 1 W/mK, an order of magnitude greater than CdTe. Lastly, the thermal conductivity decreased with increasing Te concentration.« less

Anharmonicity and atomic distribution of SnTe and PbTe thermoelectrics

DOE PAGES

Li, C. W.; Ma, J.; Cao, H. B.; ...

2014-12-29

The structure and lattice dynamics of rock-salt thermoelectric materials SnTe and PbTe are investigated with single crystal and powder neutron diffraction, inelastic neutron scattering (INS), and first-principles simulations. Our first-principles calculations of the radial distribution function (RDF) in both SnTe and PbTe show a clear asymmetry in the first nearest-neighbor (1NN) peak, which increases with temperature, in agreement with experimental reports (Ref. 1,2). We show that this peak asymmetry for the 1NN Sn–Te or Pb–Te bond results from large-amplitude anharmonic vibrations (phonons). No atomic off-centering is found in our simulations. In addition, the atomic mean square displacements derived from ourmore » diffraction data reveal stiffer bonding at the anion site, in good agreement with the partial phonon densities of states from INS, and first-principles calculations. In conclusion, these results provide clear evidence for large-amplitude anharmonic phonons associated with the resonant bonding leading to the ferroelectric instability.« less

S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

DOE PAGES

Li, C.; Poplawsky, J.; Paudel, N.; ...

2014-09-19

At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shiftmore » of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.« less

Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Ohshita, Hiroshi; Saito, Katsuhiko; Guo, Qixin

2018-02-01

Photoluminescence (PL) properties of ZnTe/ZnMgTe quantum well (QW) structures grown by molecular beam epitaxy (MBE) were investigated systematically with respect to well widths and Mg contents. Observed PL peak energies were consistent well with the calculated emission energies of the QWs considering a lattice distortion in the ZnTe well. From the temperature dependence of PL intensity, it was found that a suppression of a carrier escape from QW is crucial to obtain a PL at higher temperature in the ZnTe/ZnMgTe QW. Based on the results, multiple quantum well structures were designed and fabricated, which exhibited a green PL at room temperature.

Synthesis and thermoelectric properties of the (GeTe) 1-x(PbTe) x alloys

NASA Astrophysics Data System (ADS)

Li, S. P.; Li, J. Q.; Wang, Q. B.; Wang, L.; Liu, F. S.; Ao, W. Q.

2011-02-01

The Ge-rich (GeTe) 1-x(PbTe) x alloys with x = 0.10, 0.14, 0.18 and 0.22 were prepared by induction melting, ball milling and spark plasma sintering techniques. The thermoelectric properties of the samples were investigated. The experimental results show that all samples consist of the solid solutions of the two phases GeTe and PbTe. The samples are of p-type semiconductors. The existence of PbTe solution in GeTe increases its resistivity and Seebeck coefficient slightly, but reduces its thermal conductivity significantly. As result, the figures of merit for the materials can be enhanced. The maximum figure of merit ZT value of 0.81 was obtained in the sample (GeTe) 0.82(PbTe) 0.18 at 673K.

Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd 1-xMg xTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd 1-xMg xTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd 1-xMg xTe double heterostructures is discussed. Furthermore, the stability of CdTe/Cd 1-xMg xTe heterostructures are investigated with respect to thermal processing.

Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

DOE PAGES

LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.; ...

2017-06-05

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd 1-xMg xTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd 1-xMg xTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd 1-xMg xTe double heterostructures is discussed. Furthermore, the stability of CdTe/Cd 1-xMg xTe heterostructures are investigated with respect to thermal processing.

Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

DOE PAGES

Ogedengbe, O. S.; Swartz, C. H.; Jayathilaka, P. A. R. D.; ...

2017-06-06

Here, iodine-doped CdTe and Cd 1-xMg xTe layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-type carrier concentrations of 7.4 x 10 18 cm -3 for CdTe and 3 x 10 17 cm -3 for Cd 0.65Mg 0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTemore » samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd 0.65Mg 0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 x 10 18 cm -3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 x 10 16 cm -3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600 °C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.« less

Pressure dependence of the charge-density-wave and superconducting states in GdTe 3 ,   TbTe 3 , and DyTe 3

DOE PAGES

Zocco, D. A.; Hamlin, J. J.; Grube, K.; ...

2015-05-14

Here, we present electrical resistivity and ac-susceptibility measurements of GdTe 3, TbTe 3 and DyTe 3 performed under pressure. An upper charge-density-wave (CDW) is suppressed at a rate of dT CW,1/dP~ –85K/GPa. For TbTe 3 and DyTe 3, a second CDW below T CDW,2 increases with pressure until it reaches the T CDW,1(P) line. For GdTe 3, the lower CDW emerges as pressure is increased above ~1GPa. As these two CDW states are suppressed with pressure, superconductivity (SC) appears in the three compounds at lower temperatures. Ac-susceptibility experiments performed on TbTe 3 provide compelling evidence for bulk SC in themore » low-pressure region of the phase diagram. We provide measurements of superconducting critical fields and discuss the origin of a high-pressure superconducting phase occurring above 5 GPa.« less

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

NASA Astrophysics Data System (ADS)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Analysis of Te and TeO 2 on CdZnTe Nuclear Detectors Treated with Hydrogen Bromide and Ammonium-Based Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drabo, Mebougna L.; Egarievwe, Stephen U.; Okwechime, Ifechukwude O.

Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO 2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Temore » to TeO 2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.« less

Analysis of Te and TeO 2 on CdZnTe Nuclear Detectors Treated with Hydrogen Bromide and Ammonium-Based Solutions

DOE PAGES

Drabo, Mebougna L.; Egarievwe, Stephen U.; Okwechime, Ifechukwude O.; ...

2017-04-30

Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO 2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Temore » to TeO 2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.« less

Cyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields

PubMed Central

2012-01-01

Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum well width fluctuations. In all samples, impurity-related magnetoabsorption lines were revealed. The obtained results were interpreted within the Kane 8·8 model, the valence band offset of CdTe and HgTe, and the Kane parameter EP being adjusted. PMID:23013642

Evaluation of Tp-Te Interval and Tp-Te/QT Ratio in Patients with Coronary Slow Flow Tp-Te/QT Ratio and Coronary Slow Flow.

PubMed

Tenekecioglu, Erhan; Karaagac, Kemal; Yontar, Osman Can; Agca, Fahriye Vatansever; Ozluk, Ozlem Arican; Tutuncu, Ahmet; Arslan, Burhan; Yilmaz, Mustafa

2015-06-01

Coronary slow flow (CSF) phenomenon is described by angiographically normal coronary arteries with delayed opacification of the distal vasculature. Several studies have suggested that the interval from the peak to the end of the electrocardiographic T wave (Tp-Te) may correspond to the transmural dispersion of the repolarization and that increased Tp-Te interval and Tp-Te/QT ratio are associated with malignant ventricular arrhythmias. The aim of this study was to evaluate the ventricular repolarization by using Tp-Te interval and Tp-Te/QT ratio in patients with CSF. This study included 50 CSF patients (40 male, mean age 48.6±12.5 years) and 40 control individuals (23 male, mean age 47.8±12.5 years). Tp-Te interval and Tp-Te/QT ratio were measured from the 12-lead electrocardiogram. These parameters were compared in groups. Baseline characteristics of the study groups were comparable. In electrocardiographic parameters analysis, QT and corrected QT were similar in CSF patients compared to the controls (357±35.2 vs 362±38.0 milliseconds and 419±25.8 vs 430±44.2 milliseconds, all p value >0.05). Tp-Te interval, Tp-Te/QT and Tp-Te/QTc ratio were significantly higher in CSF patients (85±13.7 vs 74±9.9 milliseconds and 0.24±0.03 vs 0.20±0.02 and 0.20±0.03 vs 0.17±0.02 all p value <0.001). Our study revealed that QTd, Tp-Te interval and Tp-Te/QT ratio are prolonged in patients with CSF.

Near-infrared emitting AgInTe2 and Zn-Ag-In-Te colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Langevin, Marc-Antoine; Pons, Thomas; Ritcey, Anna M.; Nì. Allen, Claudine

2015-06-01

The synthesis of AgInTe2 nanocrystals emitting between 1095 nm and 1160 nm is presented. Evolution of the Ag:In:Te ratio shows progressive incorporation of In3+ in Ag2Te, leading to the formation of orthorhombic AgInTe2. When zinc is added to the synthesis, the photoluminescence quantum yield reaches 3.4 %.

Effect of Te inclusions in CdZnTe crystals at different temperatures

NASA Astrophysics Data System (ADS)

Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Gul, R.; Kim, K.-H.; Cui, Y.; Yang, G.; Xu, L.; James, R. B.

2011-02-01

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

AsTeRICS.

PubMed

Drajsajtl, Tomáš; Struk, Petr; Bednárová, Alice

2013-01-01

AsTeRICS - "The Assistive Technology Rapid Integration & Construction Set" is a construction set for assistive technologies which can be adapted to the motor abilities of end-users. AsTeRICS allows access to different devices such as PCs, cell phones and smart home devices, with all of them integrated in a platform adapted as much as possible to each user. People with motor disabilities in the upper limbs, with no cognitive impairment, no perceptual limitations (neither visual nor auditory) and with basic skills in using technologies such as PCs, cell phones, electronic agendas, etc. have available a flexible and adaptable technology which enables them to access the Human-Machine-Interfaces (HMI) on the standard desktop and beyond. AsTeRICS provides graphical model design tools, a middleware and hardware support for the creation of tailored AT-solutions involving bioelectric signal acquisition, Brain-/Neural Computer Interfaces, Computer-Vision techniques and standardized actuator and device controls and allows combining several off-the-shelf AT-devices in every desired combination. Novel, end-user ready solutions can be created and adapted via a graphical editor without additional programming efforts. The AsTeRICS open-source framework provides resources for utilization and extension of the system to developers and researches. AsTeRICS was developed by the AsTeRICS project and was partially funded by EC.

PharmTeX: a LaTeX-Based Open-Source Platform for Automated Reporting Workflow.

PubMed

Rasmussen, Christian Hove; Smith, Mike K; Ito, Kaori; Sundararajan, Vijayakumar; Magnusson, Mats O; Niclas Jonsson, E; Fostvedt, Luke; Burger, Paula; McFadyen, Lynn; Tensfeldt, Thomas G; Nicholas, Timothy

2018-03-16

Every year, the pharmaceutical industry generates a large number of scientific reports related to drug research, development, and regulatory submissions. Many of these reports are created using text processing tools such as Microsoft Word. Given the large number of figures, tables, references, and other elements, this is often a tedious task involving hours of copying and pasting and substantial efforts in quality control (QC). In the present article, we present the LaTeX-based open-source reporting platform, PharmTeX, a community-based effort to make reporting simple, reproducible, and user-friendly. The PharmTeX creators put a substantial effort into simplifying the sometimes complex elements of LaTeX into user-friendly functions that rely on advanced LaTeX and Perl code running in the background. Using this setup makes LaTeX much more accessible for users with no prior LaTeX experience. A software collection was compiled for users not wanting to manually install the required software components. The PharmTeX templates allow for inclusion of tables directly from mathematical software output as well and figures from several formats. Code listings can be included directly from source. No previous experience and only a few hours of training are required to start writing reports using PharmTeX. PharmTeX significantly reduces the time required for creating a scientific report fully compliant with regulatory and industry expectations. QC is made much simpler, since there is a direct link between analysis output and report input. PharmTeX makes available to report authors the strengths of LaTeX document processing without the need for extensive training. Graphical Abstract ᅟ.

High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies

NASA Astrophysics Data System (ADS)

Lindström, A.; Mirbt, S.; Sanyal, B.; Klintenberg, M.

2016-01-01

In this paper, we focus on the high resistivity of intentionally undoped CdTe, where the most prevalent defects are Cd vacancies and Te antisites. Our calculated formation energies lead to the conclusion that the Fermi energy of undoped CdTe is at midgap due to carrier compensation of Te antisites and Cd vacancies, which explains the experimentally observed high resistivity. We use density functional theory with the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE06) and show that the proper description of the native defects in general fails using the local density approximation (LDA) instead of HSE06. We conclude that LDA is insufficient to understand the high resistivity of undoped CdTe. We calculate the neutral and double acceptor state of the Te antisite to be intrinsic DX-centers.

Lifetimes in Te 124 : Examining critical-point symmetry in the Te nuclei

DOE PAGES

Hicks, S. F.; Vanhoy, J. R.; Burkett, P. G.; ...

2017-03-27

The Doppler-shift attenuation method following inelastic neutron scattering was used to determine the lifetimes of nuclear levels to 3.3-MeV excitation in 124Te. Level energies and spins, γ -ray energies and branching ratios, and multipole-mixing ratios were deduced from measured γ-ray angular distributions at incident neutron energies of 2.40 and 3.30 MeV, γ-ray excitation functions, and γγ coincidence measurements. The newly obtained reduced transition probabilities and level energies for 124Te were compared to critical-point symmetry model predictions. The E(5) and β 4 potential critical-point symmetries were also investigated in 122Te and 126Te.

Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

NASA Astrophysics Data System (ADS)

Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

2017-02-01

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage ( I- V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I- V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

Breast MRI at Very Short TE (minTE): Image Analysis of minTE Sequences on Non-Fat-Saturated, Subtracted T1-Weighted Images.

PubMed

Wenkel, Evelyn; Janka, Rolf; Geppert, Christian; Kaemmerer, Nadine; Hartmann, Arndt; Uder, Michael; Hammon, Matthias; Brand, Michael

2017-02-01

Purpose  The aim was to evaluate a minimum echo time (minTE) protocol for breast magnetic resonance imaging (MRI) in patients with breast lesions compared to a standard TE (nTE) time protocol. Methods  Breasts of 144 women were examined with a 1.5 Tesla MRI scanner. Additionally to the standard gradient-echo sequence with nTE (4.8 ms), a variant with minimum TE (1.2 ms) was used in an interleaved fashion which leads to a better temporal resolution and should reduce the scan time by approximately 50 %. Lesion sizes were measured and the signal-to-noise ratio (SNR) as well as the contrast-to-noise ratio (CNR) were calculated. Subjective confidence was evaluated using a 3-point scale before looking at the nTE sequences (1 = very sure that I can identify a lesion and classify it, 2 = quite sure that I can identify a lesion and classify it, 3 = definitely want to see nTE for final assessment) and the subjective image quality of all examinations was evaluated using a four-grade scale (1 = sharp, 2 = slight blur, 3 = moderate blur and 4 = severe blur/not evaluable) for lesion and skin sharpness. Lesion morphology and contrast enhancement were also evaluated. Results  With minTE sequences, no lesion was rated with "definitely want to see nTE sequences for final assessment". The difference of the longitudinal and transverse diameter did not differ significantly (p > 0.05). With minTE, lesions and skin were rated to be significantly more blurry (p < 0.01 for lesions and p < 0.05 for skin). There was no difference between both sequences with respect to SNR, CNR, lesion morphology, contrast enhancement and detection of multifocal disease. Conclusion  Dynamic breast MRI with a minTE protocol is feasible without a major loss of information (SNR, CNR, lesion morphology, contrast enhancement and lesion sizes) and the temporal resolution can be increased by a factor of 2 using minTE sequences. Key points   · Increase of

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.

2018-03-01

Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.

Searching for low-workfunction phases in the Cs-Te system: The case of Cs2Te5

NASA Astrophysics Data System (ADS)

Ruth, Anthony; Németh, Károly; Harkay, Katherine C.; Terdik, Joseph Z.; Spentzouris, Linda; Terry, Jeff

2013-05-01

We have computationally explored workfunction values of Cs2Te5 surfaces, an existing crystalline phase of the Cs-Te system and a small bandgap semiconductor, in order to search for reduced workfunction alternatives of Cs2Te that preserve the exceptionally high quantum efficiency of the Cs2Te seasoned photoemissive material. We have found that the Cs2Te5(010) surface exhibits a workfunction value of ≈1.9 eV when it is covered by Cs atoms. Cs2Te5 is analogous to our recently proposed low-workfunction materials, Cs2TeC2, and other ternary acetylides [J. Z. Terdik et al., Phys. Rev. B 86, 035142 (2012)], in as much as it also contains quasi one-dimensional substructures embedded in a Cs-matrix, forming the foundation for anomalous workfunction anisotropy and low workfunction values. The one-dimensional substructures in Cs2Te5 are polytelluride ions in a tetragonal rod-like packing. Cs2Te5 has the advantage of simpler composition and availability as compared to Cs2TeC2; however, its low workfunction surface is less energetically favored to the other surfaces than in Cs2TeC2. A significant and remarkable advantage of Cs2Te5 as compared to Cs2Te is its high optical absorption of visible photons that can allow for high quantum efficiency electron emission at visible photon energies.

78 FR 28626 - Te Connectivity, Industrial Division, Middletown, Pennsylvania; Te Connectivity, Corporate Shared...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-15

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-81,557; TA-W-81,557A; TA-W-81,557B; TA-W-81,557C; ;TA-W-81,557D; Ta-W-81,557e] Te Connectivity, Industrial Division, Middletown, Pennsylvania; Te Connectivity, Corporate Shared Services Group 100 & 200 Amp Drive, Harrisburg, Pennsylvania; Te Connectivity Corporate Shared Services...

CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe

NASA Astrophysics Data System (ADS)

Tower, J. P.; Tobin, S. P.; Kestigian, M.; Norton, P. W.; Bollong, A. B.; Schaake, H. F.; Ard, C. K.

1995-05-01

Impurity levels were tracked through the stages of substrate and liquid phase epitaxy (LPE) layer processing to identify sources of elements which degrade infrared photodetector performance. Chemical analysis by glow discharge mass spectrometry and Zeeman corrected graphite furnace atomic absorption effectively showed the levels of impurities introduced into CdZnTe substrate material from the raw materials and the crystal growth processes. A new purification process (in situ distillation zone refining) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate copper contamination was found to degrade the LPE layer and device electrical properties, in the case of lightly doped HgCdTe. Anomalous HgCdTe carrier type conversion was correlated to certain CdZnTe and CdTe substrate ingots.

Effect of MeJA treatment on polyamine, energy status and anthracnose rot of loquat fruit.

PubMed

Cao, Shifeng; Cai, Yuting; Yang, Zhenfeng; Joyce, Daryl C; Zheng, Yonghua

2014-02-15

The effect of methyl jasmonate (MeJA) on changes in polyamines content and energy status and their relation to disease resistance was investigated. Freshly harvested loquat fruit were treated with 10 μmol l(-1) MeJA and wound inoculated with Colletotrichum acutatum spore suspension (1.0 × 10(5) spores ml(-1)) after 24h, and then stored at 20 °C for 6 days. MeJA treatment significantly reduced decay incidence. MeJA treated fruit manifested higher contents of polyamines (putrescine, spermidine and spermine) compared with the control fruit, during storage. MeJA treatment also maintained higher levels of adenosine triphosphate, and suppressed an increase in adenosine monophosphate content in loquat fruit. These results suggest that MeJA treatment may inhibit anthracnose rot by increasing polyamine content and maintaining the energy status. Copyright © 2013. Published by Elsevier Ltd.

Fabrication of Te and Te-Au Nanowires-Based Carbon Fiber Fabrics for Antibacterial Applications

PubMed Central

Chou, Ting-Mao; Ke, Yi-Yun; Tsao, Yu-Hsiang; Li, Ying-Chun; Lin, Zong-Hong

2016-01-01

Pathogenic bacteria that give rise to diseases every year remain a major health concern. In recent years, tellurium-based nanomaterials have been approved as new and efficient antibacterial agents. In this paper, we developed the approach to directly grow tellurium nanowires (Te NWs) onto commercial carbon fiber fabrics and demonstrated their antibacterial activity. Those Te NWs can serve as templates and reducing agents for gold nanoparticles (Au NPs) to deposit. Three different Te-Au NWs with varied concentration of Au NPs were synthesized and showed superior antibacterial activity and biocompability. These results indicate that the as-prepared carbon fiber fabrics with Te and Te-Au NWs can become antimicrobial clothing products in the near future. PMID:26861380

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, J.; Levin, E. M.; Lee, Y.

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE PAGES

Cui, J.; Levin, E. M.; Lee, Y.; ...

2016-08-18

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressivemore » maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.« less

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

NASA Astrophysics Data System (ADS)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Anisotropic layered Bi2Te3-In2Te3 composites: control of interface density for tuning of thermoelectric properties

PubMed Central

Liu, Dongmei; Li, Xinzhong; Borlido, Pedro Miguel de Castro; Botti, Silvana; Schmechel, Roland; Rettenmayr, Markus

2017-01-01

Layered (Bi1−xInx)2Te3-In2Te3 (x = 0.075) composites of pronounced anisotropy in structure and thermoelectric properties were produced by zone melting and subsequent coherent precipitation of In2Te3 from a (Bi1−xInx)2Te3 (x > 0.075) matrix. Employing solid state phase transformation, the Bi2Te3/In2Te3 interface density was tuned by modifying the driving force for In2Te3 precipitation. The structure-property relationship in this strongly anisotropic material is characterized thoroughly and systematically for the first time. Unexpectedly, with increasing Bi2Te3/In2Te3 interface density, an increase in electrical conductivity and a decrease in the absolute Seebeck coefficient were found. This is likely to be due to electron accumulation layers at the Bi2Te3/In2Te3 interfaces and the interplay of bipolar transport in Bi2Te3. Significantly improved thermoelectric properties of Bi2Te3-In2Te3 composites as compared to the single phase (Bi1−xInx)2Te3 solid solution are obtained. PMID:28272541

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor.

PubMed

He, M Q; Shen, J Y; Petrović, A P; He, Q L; Liu, H C; Zheng, Y; Wong, C H; Chen, Q H; Wang, J N; Law, K T; Sou, I K; Lortz, R

2016-09-02

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3.

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor

PubMed Central

He, M. Q.; Shen, J. Y.; Petrović, A. P.; He, Q. L.; Liu, H. C.; Zheng, Y.; Wong, C. H.; Chen, Q. H.; Wang, J. N.; Law, K. T.; Sou, I. K.; Lortz, R.

2016-01-01

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3. PMID:27587000

Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires

NASA Astrophysics Data System (ADS)

Orrù, M.; Robin, E.; Den Hertog, M.; Moratis, K.; Genuist, Y.; André, R.; Ferrand, D.; Cibert, J.; Bellet-Amalric, E.

2018-04-01

The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth rate is small and strongly temperature dependent, but a good control of the growth conditions allows the incorporation of quantum dots in nanowires with sharp interfaces and adjustable shape, and it minimizes the radial growth and the subsequent formation of additional CdTe clusters on the nanowire sidewalls, as confirmed by photoluminescence. Uncapped CdTe segments dissolve into the gold nanoparticle when interrupting the flux, giving rise to a bulblike (pendant-droplet) shape attributed to the Kirkendall effect.

Transition between strong and weak topological insulator in ZrTe5 and HfTe5

NASA Astrophysics Data System (ADS)

Fan, Zongjian; Liang, Qi-Feng; Chen, Y. B.; Yao, Shu-Hua; Zhou, Jian

2017-04-01

ZrTe5 and HfTe5 have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe5 or HfTe5 has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological prop-erties of ZrTe5 and HfTe5 on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal state, then to a weak TI when the crystal expands. Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.

Pressure-Induced Phase Transitions in GeTe-Rich Ge-Sb-Te Alloys across the Rhombohedral-to-Cubic Transitions.

PubMed

Krbal, Milos; Bartak, Jaroslav; Kolar, Jakub; Prytuliak, Anastasiia; Kolobov, Alexander V; Fons, Paul; Bezacier, Lucile; Hanfland, Michael; Tominaga, Junji

2017-07-17

We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge 8 Sb 2 Te 11 and randomly distorted cubic Ge 4 Sb 2 Te 7 and high-temperature Ge 8 Sb 2 Te 11 phases. While coherent distortion in Ge 8 Sb 2 Te 11 does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge 8 Sb 2 Te 11 phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge 4 Sb 2 Te 7 , which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge 8 Sb 2 Te 11 is a temperature-dependent process. Ge 8 Sb 2 Te 11 transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe) x - (Sb 2 Te 3 ) 1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.

Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles

NASA Astrophysics Data System (ADS)

Lindström, A.; Klintenberg, M.; Sanyal, B.; Mirbt, S.

2015-08-01

The coexistence in Te-rich CdTe of substitutional Cl-dopants, ClTe, which act as donors, and Cd vacancies, VC d - 1 , which act as electron traps, was studied from first principles utilising the HSE06 hybrid functional. We find ClTe to preferably bind to VC d - 1 and to form an acceptor complex, (ClTe-VCd)-1. The complex has a (0,-1) charge transfer level close to the valence band and shows no trap state (deep level) in the band gap. During the complex formation, the defect state of VCd-1 is annihilated and leaves the Cl-doped CdTe bandgap without any trap states (self-purification). We calculate Cl-doped CdTe to be semi-insulating with a Fermi energy close to midgap. We calculate the formation energy of the complex to be sufficiently low to allow for spontanous defect formation upon Cl-doping (self-compensation). In addition, we quantitatively analyse the geometries, DOS, binding energies and formation energies of the (ClTe-VCd) complexes.

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Behera, Jitendra K.; Lv, Shilong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E.

2017-09-01

By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the {{Sb}}2{{Te}}3-GeTe superlattice van der Waals devices. Multiple Ge atoms switching through a two-dimensional Te layer reduces the activation barrier for further atoms to switch; an effect that can be enhanced by biaxial strain. The out-of-plane phonon mode of the GeTe crystal remains active in the superlattice heterostructures. The large in-plane biaxial strain imposed by the {{Sb}}2{{Te}}3 layers on the GeTe layers substantially improves the switching speed, reset energy, and cyclability of the superlattice memory devices. Moreover, carefully controlling residual stress in the layers of {{Sb}}2{{Te}}3-GeTe interfacial phase change memories provides a new degree of freedom to design the properties of functional superlattice structures for memory and photonics applications.

Kinetic barriers for Cd and Te adatoms on Cd and Te terminated CdTe (111) surface using ab initio simulations

NASA Astrophysics Data System (ADS)

Naderi, Ebadollah; Nanavati, Sachin P.; Majumder, Chiranjib; Ghaisas, S. V.

2014-03-01

In the present work we have calculated using density functional theory (DFT), diffusion barrier potentials on both the CdTe (111) surfaces, Cd terminated (A-type) & Te terminated (B-type). We employ nudge elastic band method (NEB) for obtaining the barrier potentials. The barrier is computed for Cd and for Te adatoms on both A-type and B-type surfaces. We report two energetically favourable positions along the normal to the surface, one above and other below the surface. The one above the surface has binding energy slightly more the one below. According to the results of this work, binding energy (in all cases) for adatoms are reasonable and close to experimental data. The barrier potential for hopping adatoms (Cd and Te) on both the surfaces is less than 0.35 eV. Apart from these most probable sites, there are other at least two sites on both the types of surfaces which are meta stable. We have also computed barriers for hopping to and from these meta stable positions. The present results can shade light on the defect formation mechanism in CdTe thin films during growth. The authors would like to thank C-DAC for the computing time on its PARAM series of supercomputers and DST Govt. of India, for partial funding.

First-principles study of lattice thermal conductivity in ZrTe5 and HfTe5

NASA Astrophysics Data System (ADS)

Wang, Cong; Wang, Haifeng; Chen, Y. B.; Yao, Shu-Hua; Zhou, Jian

2018-05-01

Recently, the layered transition-metal pentatellurides ZrTe5 and HfTe5 have attracted increasing attention because of their interesting topological electronic properties. Nevertheless, some of their other good physical properties seem to be ignored now. Actually, both ZrTe5 and HfTe5 have high electric conductivities (>105 Ω-1 m-1) and Seebeck coefficients (> 100 μV/K) at room temperature, thus making them promising thermoelectric materials. However, the disadvantage is that the thermal conductivities of the two materials are relatively high according to the few available experiments; meanwhile, the detailed mechanism of the intrinsic thermal conductivity has not been studied yet. Based on the density functional theory and the Boltzmann transport theory, we present here the theoretical study of the intrinsic lattice thermal conductivities of ZrTe5 and HfTe5, which are found to be in the range of 5-8 W/mṡK at room temperature and well consistent with the experimental results. We also find that the thermal conductivities of the two materials are anisotropic, which are mainly caused by their anisotropic crystal structures. Based on the detailed analysis, we proposed that the thermal conductivities of the two materials could possibly be reduced by different kinds of structural engineering at the atomic and mesoscopic scales, such as alloying, doping, nano-structuring, and polycrystalline structuring, which could make ZrTe5 and HfTe5 good thermoelectric materials for room temperature thermoelectric applications.

Schreibende Messgeräte

NASA Astrophysics Data System (ADS)

Plaßmann, Wilfried

Die schreibenden Messgeräte werden hauptsächlich eingesetzt, um Vorgänge aufzuzeichnen und zu dokumentieren, die sich im Minuten- und Stunden-Bereich abspielen. Sie sind weitgehend durch Oszilloskope oder elektronische Geräte ähnlich einem Oszilloskop ersetzt worden, die entsprechend für Langzeitaufnahmen ausgelegt sind. Der Vorteil dieser Geräte gegenüber den schreibenden Messgeräten ist der, dass die Daten dauerhaft gespeichert sind, einschließlich der notwendigen Kenngrößen wie Zeitmaßstab, Amplitude, Datum, Aufzeichnungsgerät usw., und sich in dieser Form beliebig oft ausdrucken und vor allem direkt weiterverarbeiten lassen. Weiterhin entfallen die Probleme mit der Mechanik, dem Papier und den Schreibstiften. Deshalb folgt hier eine nur kurze Darstellung der Geräte.

Superconductivity in Ta3Pd3Te14 with quasi-one-dimensional PdTe2 chains.

PubMed

Jiao, Wen-He; He, Lan-Po; Liu, Yi; Xu, Xiao-Feng; Li, Yu-Ke; Zhang, Chu-Hang; Zhou, Nan; Xu, Zhu-An; Li, Shi-Yan; Cao, Guang-Han

2016-02-15

We report bulk superconductivity at 1.0 K in a low-dimensional ternary telluride Ta3Pd3Te14 containing edge-sharing PdTe2 chains along crystallographic b axis, similar to the recently discovered superconductor Ta4Pd3Te16. The electronic heat capacity data show an obvious anomaly at the transition temperature, which indicates bulk superconductivity. The specific-heat jump is ΔC/(γ(n)T(c)) ≈ 1.35, suggesting a weak coupling scenario. By measuring the low-temperature thermal conductivity, we conclude that Ta3Pd3Te14 is very likely a dirty s-wave superconductor. The emergence of superconductivity in Ta3Pd3Te14 with a lower T(c), compared to that of Ta4Pd3Te16, may be attributed to the lower density of states.

Syntheses, crystal structures, and characterization of two new Tl+-Cu2+-Te6+ oxides: Tl4CuTeO6 and Tl6CuTe2O10

NASA Astrophysics Data System (ADS)

Yeon, Jeongho; Kim, Sang-Hwan; Green, Mark A.; Bhatti, Kanwal Preet; Leighton, C.; Shiv Halasyamani, P.

2012-12-01

Crystals and polycrystalline powders of two new oxide materials, Tl4CuTeO6 and Tl6CuTe2O10, have been synthesized by hydrothermal and solid-state methods. The materials were structurally characterized by single-crystal X-ray diffraction. Tl4CuTeO6 and Tl6CuTe2O10 exhibit one dimensional anionic slabs of [CuTeO6]4- and [CuTe2O10]6-, respectively. Common to both slabs is the occurrence of Cu2+O4 distorted squares and Te6+O6 octahedra. The slabs are separated by Tl+ cations. For Tl4CuTeO6, magnetic measurements indicate a maximum at ∼8 K in the temperature dependence of the susceptibility. Low temperature neutron diffraction data confirm no long-range magnetic ordering occurs and the susceptibility was adequately accounted for by fits to a Heisenberg alternating chain model. For Tl6CuTe2O10 on the other hand, magnetic measurements revealed paramagnetism with no evidence of long-range magnetic ordering. Infrared, UV-vis spectra, thermogravimetric, and differential thermal analyses are also reported. Crystal data: Tl4CuTeO6, Triclinic, space group P-1 (No. 2), a=5.8629(8) Å, b=8.7848(11) Å, c=9.2572(12) Å, α=66.0460(10), β=74.2010(10), γ=79.254(2), V=417.70(9) Å3, and Z=2; Tl6CuTe2O10, orthorhombic, space group Pnma (No. 62), a=10.8628(6) Å, b=11.4962(7) Å, c=10.7238(6) Å, V=1339.20(13) Å3, and Z=4.

Self-Catalyzed CdTe Wires.

PubMed

Baines, Tom; Papageorgiou, Giorgos; Hutter, Oliver S; Bowen, Leon; Durose, Ken; Major, Jonathan D

2018-04-25

CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111) oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

NASA Astrophysics Data System (ADS)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

CdCl2 Passivation of Polycrystalline CdMgTe and CdZnTe Absorbers for Tandem Photovoltaic Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzger, Wyatt K; Swanson, Drew; Reich, Carey

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extendingmore » Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.« less

Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire.

PubMed

Wojnar, P; Płachta, J; Zaleszczyk, W; Kret, S; Sanchez, Ana M; Rudniewski, R; Raczkowska, K; Szymura, M; Karczewski, G; Baczewski, L T; Pietruczik, A; Wojtowicz, T; Kossut, J

2016-03-14

We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.

Topological crystalline insulator SnTe nanoribbons

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.; Dulal, Rajendra P.; Pegg, Ian L.; Philip, John

2017-03-01

Topological crystalline insulators are systems in which a band inversion that is protected by crystalline mirror symmetry gives rise to nontrivial topological surface states. SnTe is a topological crystalline insulator. It exhibits p-type conductivity due to Sn vacancies and Te antisites, which leads to high carrier density in the bulk. Thus growth of high quality SnTe is a prerequisite for understanding the topological crystalline insulating behavior. We have grown SnTe nanoribbons using a solution method. The width of the SnTe ribbons varies from 500 nm to 2 μm. They exhibit rock salt crystal structure with a lattice parameter of 6.32 Å. The solution method that we have adapted uses low temperature, so the Sn vacancies can be controlled. The solution grown SnTe nanoribbons exhibit strong semiconducting behavior with an activation energy of 240 meV. This activation energy matches with the calculated band gap for SnTe with a lattice parameter of 6.32 Å, which is higher than that reported for bulk SnTe. The higher activation energy makes the thermal excitation of bulk charges very difficult on the surface. As a result, the topological surfaces will be free from the disturbance caused by the thermal excitations

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi2Te3 and Sb2Te3 Thermoelectric Materials

PubMed Central

Trung, Nguyen Huu; Sakamoto, Kei; Toan, Nguyen Van; Ono, Takahito

2017-01-01

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi2Te3) and P-type antimony telluride (Sb2Te3), are performed and compared. As a result, highly oriented Bi2Te3 and Sb2Te3 thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi2Te3 and 500-µm-thick Sb2Te3 films are obtained. The Seebeck coefficients for the Bi2Te3 and Sb2Te3 films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi2Te3 is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb2Te3. The power factors of each thermoelectric material can reach 15 × 10−4 W/mK2 for Bi2Te3 and 11.2 × 10−4 W/mK2 for Sb2Te3. PMID:28772511

Magnetic properties and magnetocaloric effect of a trigonal Te-rich Cr5Te8 single crystal

NASA Astrophysics Data System (ADS)

Luo, Xiao-Hua; Ren, Wei-Jun; Zhang, Zhi-Dong

2018-01-01

A trigonal Te-rich Cr5Te8 single crystal was grown by the Te-flux method. The usual and rotating magnetocaloric effects have been investigated by measuring isothermal magnetization curves on both a single crystal and polycrystalline powder. The Curie temperature and the magnetic moment of trigonal Te-rich Cr5Te8 were determined to be 250 K and 2.03 μB/Cr, respectively. The difference from the usual magnetocaloric effect, the rotating magnetocaloric effect has saturation tendency when the applied field is above the anisotropy field. The temperature, where the rotating entropy change has its maximum, decreases with increasing the magnetic field. The temperature dependence of the magnetocrystalline anisotropy is the determining factor for the rotating magnetocaloric effect.

Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging

NASA Astrophysics Data System (ADS)

Jing, Hongyang; Li, Yuan; Xu, Lianyong; Han, Yongdian; Lu, Guoquan; Zhang, Hao

2015-12-01

As a diffusion barrier layer, Ni is widely applied in power electronics packaging, especially in thermoelectric devices. This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints. The thermoelectric joint consists of Sn96.5Ag3.0Cu0.5 (SAC305) solder and Bi2Te3-based thermoelectric materials such as Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Se0.15Te2.85 during service. The result shows that with the increasing aging time, Ni layer was constantly consumed by SAC305 and Bi2Te3-based thermoelectric materials simultaneously. The reaction products are (Cu,Ni)6Sn5 and NiTe or Ni(Bi,Te), respectively. Besides, the shear strength of SAC305/Bi0.5Sb1.5Te3 joint or SAC305/Bi1.8Sb0.2Se0.15Te2.85 joint gets gradually decreased and thermoelectric conversion performance gets worse. Meantime, the different failure mechanisms are also compared between SAC305/Bi0.5Sb1.5Te3 couple joints and SAC305/Bi1.8Sb0.2Se0.15Te2.85 couple joints.

CdTe devices and method of manufacturing same

DOEpatents

Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

2015-09-29

A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

Electrodeposition of Ni on Bi2Te3 and Interfacial Reaction Between Sn and Ni-Coated Bi2Te3

NASA Astrophysics Data System (ADS)

Tseng, Yu-Chen; Lee, Hsuan; Hau, Nga Yu; Feng, Shien-Ping; Chen, Chih-Ming

2018-01-01

Bismuth-telluride (Bi2Te3)-based compounds are common thermoelectric materials used for low-temperature applications, and nickel (Ni) is usually deposited on the Bi2Te3 substrates as a diffusion barrier. Deposition of Ni on the p-type (Sb-doped) and n-type (Se-doped) Bi2Te3 substrates using electroplating and interfacial reactions between Sn and Ni-coated Bi2Te3 substrates are investigated. Electrodeposition of Ni on different Bi2Te3 substrates is characterized based on cyclic voltammetry and Tafel measurements. Microstructural characterizations of the Ni deposition and the Sn/Ni/Bi2Te3 interfacial reactions are performed using scanning electron microscopy. A faster growth rate is observed for the Ni deposition on the n-type Bi2Te3 substrate which is attributed to a lower activation energy of reduction due to a higher density of free electrons in the n-type Bi2Te3 material. The common Ni3Sn4 phase is formed at the Sn/Ni interfaces on both the p-type and n-type Bi2Te3 substrates, while the NiTe phase is formed at a faster rate at the interface between Ni and n-type Bi2Te3 substrates.

Thermodynamic Properties of AgIn2Te3I and AgIn2Te3Br, Determined by EMF Method

NASA Astrophysics Data System (ADS)

Moroz, M. V.; Prokhorenko, M. V.; Prokhorenko, S. V.; Yatskov, M. V.; Reshetnyak, O. V.

2018-01-01

Differential thermal analysis (DTA), X-ray diffraction (XRD), and electromotive force (EMF) are used to triangulate Ag-In-Te-I(Br) systems in the vicinity of compounds AgIn2Te3I and AgIn2Te3Br. The three-dimensional position of the AgIn2Te3I-InTe-Ag2Te-AgI and AgIn2Te3Br-InTe-Ag3TeBr phase areas with respect to the figurative points of silver is used to create equations of potential-determining chemical reactions. The potential-determining reactions are conducted in (-)C|Ag|Ag3GeS3I(Br) glass|D|C(+) electrochemical cells (ECCs), where C stands for inert (graphite) electrodes, Ag and D are ECC electrodes (D denotes alloys of one-, three-, and four-phase areas), and Ag3GeS3I and Ag3GeS3Br glasses are membranes with purely ionic Ag+ conductivity. Linear parts of the temperature dependences of the cell EMFs are used to calculate the standard integral thermodynamic functions of saturated solid solutions based on AgIn2Te3I and AgIn2Te3Br, and the relative partial thermodynamic functions of silver in the stoichiometric quaternary compounds.

The crystal structures of BiTeO 3I, NdTeO 3X (X=Cl, Br) and Bi 5TeO 8.5I 2: some crystal chemistry peculiarities of layered Bi(Ln)Te oxyhalides

NASA Astrophysics Data System (ADS)

Berdonosov, Peter S.; Charkin, Dmitry O.; Kusainova, Ardak M.; Hervoches, Charles H.; Dolgikh, Valeriy A.; Lightfoot, Philip

2000-09-01

Four new layered oxyhalides related to the Sillen family have been prepared and characterized by Rietveld refinement of powder X-ray and neutron diffraction data. BiTeO 3I and NdTeO 3Br both adopt tetragonal symmetry, space group P4/ nmm (for BiTeO 3I, a=4.10811(8), c=27.988(1) Å; NdTeO 3Br, a=4.06603(7), c=26.922(1) Å, at 25°C). The structures are composed of triple and double fluorite-related mixed metal oxide layers separated by single and double halogen layers, in the sequence MTe 2O 5XXMTe 2O 5XM 2O 2X, which may be represented by the symbol X 13X 13X 22, where the subscript signifies the number of halogen layers and the superscript the number of metal sublayers within the fluorite block, by analogy with Sillen's notation. The double fluorite layers are occupied exclusively by Bi, whereas there is an ordered arrangement of Bi/Te within the triple fluorite layers, with Te exclusively occupying the outer sublayers of the block. NdTeO 3Cl adopts an orthorhombically distorted form of this structure type, space group Pmmn, a=4.08096(8), b=4.03441(8), c=25.7582(7) Å at 25°C. Bi 5TeO 8.5I 2 adopts a distorted, non-centrosymmetric version of the simpler X 13 structure type, space group Cmm2, a=5.6878(3), b=5.7230(3), c=9.7260(6) Å, consisting of single halogen layers sandwiched between triple fluorite layers, in which there is partial ordering of the Bi/Te cations.

Determination of a natural valence-band offset - The case of HgTe and CdTe

NASA Technical Reports Server (NTRS)

Shih, C. K.; Spicer, W. E.

1987-01-01

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Giant spin splitting in optically active ZnMnTe/ZnMgTe core/shell nanowires.

PubMed

Wojnar, Piotr; Janik, Elżbieta; Baczewski, Lech T; Kret, Sławomir; Dynowska, Elżbieta; Wojciechowski, Tomasz; Suffczyński, Jan; Papierska, Joanna; Kossacki, Piotr; Karczewski, Grzegorz; Kossut, Jacek; Wojtowicz, Tomasz

2012-07-11

An enhancement of the Zeeman splitting as a result of the incorporation of paramagnetic Mn ions in ZnMnTe/ZnMgTe core/shell nanowires is reported. The studied structures are grown by gold-catalyst assisted molecular beam epitaxy. The near band edge emission of these structures, conspicuously absent in the case of uncoated ZnMnTe nanowires, is activated by the presence of ZnMgTe coating. Giant Zeeman splitting of this emission is studied in ensembles of nanowires with various average Mn concentrations of the order of a few percent, as well as in individual nanowires. Thus, we show convincingly that a strong spin sp-d coupling is indeed present in these structures.

High pressure structural stability of the Na-Te system

NASA Astrophysics Data System (ADS)

Wang, Youchun; Tian, Fubo; Li, Da; Duan, Defang; Xie, Hui; Liu, Bingbing; Zhou, Qiang; Cui, Tian

2018-03-01

The ab initio evolutionary algorithm is used to search for all thermodynamically stable Na-Te compounds at extreme pressure. In our calculations, several new structures are discovered at high pressure, namely, Imma Na2Te, Pmmm NaTe, Imma Na8Te2 and P4/mmm NaTe3. Like the known structures of Na2Te (Fm-3m, Pnma and P63/mmc), the Pmmm NaTe, Imma Na8Te2 and P4/mmm NaTe3 structures also show semiconductor properties with band-gap decreases when pressure increased. However, we find that the band-gap of Imma Na2Te structure increases with pressure. We presume that the result may be caused by the increasing of splitting between Te p states and Na s, Na p and Te d states. Furthermore, we think that the strong hybridization between Na p state and Te d state result in the band gap increasing with pressure.

Quantum linear magnetoresistance in NbTe2

NASA Astrophysics Data System (ADS)

Chen, Hongxiang; Li, Zhilin; Fan, Xiao; Guo, Liwei; Chen, Xiaolong

2018-07-01

NbTe2 is a quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by a quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural TaTe2 provides more information about the band structure evolution with charge density wave transitions in NbTe2 and TaTe2.

Te homogeneous precipitation in Ge dislocation loop vicinity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perrin Toinin, J.; Portavoce, A., E-mail: alain.portavoce@im2np.fr; Texier, M.

2016-06-06

High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te{sup 2+} or Te{sup 1+} ions.

JaSTA-2: Second version of the Java Superposition T-matrix Application

NASA Astrophysics Data System (ADS)

Halder, Prithish; Das, Himadri Sekhar

2017-12-01

In this article, we announce the development of a new version of the Java Superposition T-matrix App (JaSTA-2), to study the light scattering properties of porous aggregate particles. It has been developed using Netbeans 7.1.2, which is a java integrated development environment (IDE). The JaSTA uses double precision superposition T-matrix codes for multi-sphere clusters in random orientation, developed by Mackowski and Mischenko (1996). The new version consists of two options as part of the input parameters: (i) single wavelength and (ii) multiple wavelengths. The first option (which retains the applicability of older version of JaSTA) calculates the light scattering properties of aggregates of spheres for a single wavelength at a given instant of time whereas the second option can execute the code for a multiple numbers of wavelengths in a single run. JaSTA-2 provides convenient and quicker data analysis which can be used in diverse fields like Planetary Science, Atmospheric Physics, Nanoscience, etc. This version of the software is developed for Linux platform only, and it can be operated over all the cores of a processor using the multi-threading option.

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

DOEpatents

Gessert, T.A.

1999-06-01

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

DOEpatents

Gessert, Timothy A.

1999-01-01

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

High-Rate Mechanical Properties of JA2 Propellant at Temperatures from -50 to 80 deg C

DTIC Science & Technology

2015-07-01

panorama of postcompression JA2 grain sample (uniaxially compressed at a rate of ~100 s–1, 80 °C, and strain greater than 40%), 50× magnification...19 Fig. 36 SEM panorama of postcompression JA2 grain sample...19 Fig. 37 SEM panorama of postcompression JA2 grain sample (uniaxially compressed at a rate of ~100 s–1, 60 °C, and strain

Expanding the remarkable structural diversity of uranyl tellurites: hydrothermal preparation and structures of K[UO(2)Te(2)O(5)(OH)], Tl(3)[(UO(2))(2)[Te(2)O(5)(OH)](Te(2)O(6))].2H(2)O, beta-Tl(2)[UO(2)(TeO(3))(2)], and Sr(3)[UO(2)(TeO(3))(2)](TeO(3))(2).

PubMed

Almond, Philip M; Albrecht-Schmitt, Thomas E

2002-10-21

The reactions of UO(2)(C(2)H(3)O(2))(2).2H(2)O with K(2)TeO(3).H(2)O, Na(2)TeO(3) and TlCl, or Na(2)TeO(3) and Sr(OH)(2).8H(2)O under mild hydrothermal conditions yield K[UO(2)Te(2)O(5)(OH)] (1), Tl(3)[(UO(2))(2)[Te(2)O(5)(OH)](Te(2)O(6))].2H(2)O (2) and beta-Tl(2)[UO(2)(TeO(3))(2)] (3), or Sr(3)[UO(2)(TeO(3))(2)](TeO(3))(2) (4), respectively. The structure of 1 consists of tetragonal bipyramidal U(VI) centers that are bound by terminal oxo groups and tellurite anions. These UO(6) units span between one-dimensional chains of corner-sharing, square pyramidal TeO(4) polyhedra to create two-dimensional layers. Alternating corner-shared oxygen atoms in the tellurium oxide chains are protonated to create short/long bonding patterns. The one-dimensional chains of corner-sharing TeO(4) units found in 1 are also present in 2. However, in 2 there are two distinct chains present, one where alternating corner-shared oxygen atoms are protonated, and one where the chains are unprotonated. The uranyl moieties in 2 are bound by five oxygen atoms from the tellurite chains to create seven-coordinate pentagonal bipyramidal U(VI). The structures of 3 and 4 both contain one-dimensional [UO(2)(TeO(3))(2)](2-) chains constructed from tetragonal bipyramidal U(VI) centers that are bridged by tellurite anions. The chains differ between 3 and 4 in that all of the pyramidal tellurite anions in 3 have the same orientation, whereas the tellurite anions in 4 have opposite orientations on each side of the chain. In 4, there are also additional isolated TeO(3)(2-) anions present. Crystallographic data: 1, orthorhombic, space group Cmcm, a = 7.9993(5) A, b = 8.7416(6) A, c = 11.4413(8) A, Z = 4; 2, orthorhombic, space group Pbam, a = 10.0623(8) A, b = 23.024(2) A, c = 7.9389(6) A, Z = 4; 3, monoclinic, space group P2(1)/n, a = 5.4766(4) A, b = 8.2348(6) A, c = 20.849(3) A, beta = 92.329(1) degrees, Z = 4; 4, monoclinic, space group C2/c, a = 20.546(1) A, b = 5.6571(3) A, c = 13.0979(8) A, beta

Structural and magnetic properties of hexagonal Cr1-δTe films grown on CdTe(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kanazawa, Ken; Yamawaki, Kazuma; Sekita, Naoya; Nishio, Yôtarô; Kuroda, Shinji; Mitome, Masanori; Bando, Yoshio

2015-04-01

We investigated the structural and magnetic properties of Cr1-δTe thin films grown on CdTe(001) layers by molecular beam epitaxy (MBE) with systematic variations of the ratio between Cr and Te fluxes and the substrate temperature Ts during the growth. Cr1-δTe of the hexagonal structure (hex-Cr1-δTe) was always formed irrespective of the growth conditions, but the growth orientation was different depending on the Cr/Te flux ratio and Ts. Hex-Cr1-δTe was grown in the [0001] axis in the range of small Cr/Te ratios and high Ts while it was also grown in the direction normal to the (1-102) plane at larger Cr/Te ratios or lower Ts. Hex-Cr1-δTe films grown in the both orientations show ferromagnetism, but they exhibit a clear contrast in the field dependence of perpendicular magnetization at 2 K; a square hysteretic loop in the film grown in the [0001] axis versus a round-shape loop in the film grown in the direction normal to the (1-102) plane. Moreover, the films grown in the [0001] axis at the smallest Cr/Te ratio show variations of ferromagnetic properties with Curie temperature (Tc) and the coercivity (Hc) varying according to the value of Ts.

MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications.

PubMed

Kim, Jeong-Hun; Jung, Yong-Chul; Suh, Sang-Hee; Kim, Jin-Sang

2006-11-01

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI{sub 3} and CuI

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, Vladimir A., E-mail: kulb@mig.phys.msu.ru; Kytin, Vladimir G.; Kudryashov, Alexey A.

The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within themore » frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI{sub 3} or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

{[Ga(en){sub 3}]{sub 2}(Ge{sub 2}Te{sub 15})}n : a polymeric semiconducting polytelluride with boat-shaped Te{sub 8}{sup 4-} rings and cross-shaped Te{sub 5}{sup 6-} units.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Q.; Malliakas, C. D.; Kanatzidis, M. G.

2009-11-11

The reaction of the Zintl compound K{sub 4}Ge{sub 9} with Te and Ga{sub 2}Te{sub 3} in ethylenediamine (en) at 190 C gave the germanium polytelluride {l_brace}[Ga(en){sub 3}]{sub 2}[(GeTe){sub 2}(Te{sub 5}){sup 6-}(Te{sub 8}){sup 4-}]{r_brace}n (1). The single-crystal structure analysis revealed that 1 has two different polytelluride fragments: cross-shaped 36-e- TeTe{sub 4}{sup 6-} anions and boat-shaped 52-e- Te{sup 8}{sup 4-} rings. The new material is a p-type semiconductor at room temperature and switches to n-type at 380 K.

Chromium as Resonant Donor Impurity in PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nielsen, M.D.; Levin, Evgenii; Jaworski, C.M.

2012-01-25

We synthesize and perform structural, thermoelectric, magnetic, and 125Te NMR characterization measurements on chromium-doped PbTe. 125Te NMR and magnetic measurements show that Pb1−xCrxTe is a solid solution up to x = 0.4 at.% and forms an n-type dilute paramagnetic semiconductor. The Cr level is resonant and pins the Fermi level about 100 meV into the conduction band at liquid nitrogen temperatures and below, but it moves into the gap as the temperature increases to 300 K. 125Te NMR spectra exhibit a Knight shift that correlates well with Hall effect measurements and resolve peaks of Te near Cr. Magnetic behavior indicatesmore » that Cr exists mainly as Cr2+. No departure from the Pisarenko relation for PbTe is observed. Secondary Cr2Te3 and Cr3+δTe4 phases are present in samples with x > 0.4%.« less

Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x)

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Chen, Nancy; Gascoin, Franck; Mueller, Eckhard; Karpinski, Gabriele; Stiewe, Christian

2006-01-01

A document presents a study of why materials of composition (Ag1 ySbTe2)0.05 (PbTe)0.95 [0< or = y < or = 1] were previously reported to have values of the thermoelectric figure of merit [ZT (where Z = alpha(sup 2)/rk, alpha is the Seebeck coefficient, r is electrical resistivity, k is thermal conductivity, and T is absolute temperature)] ranging from <1 to >2. In the study, samples of (AgSbTe2)0.05(PbTe)0.95, (Ag0.67SbTe2)0.05 (PbTe)0.95, and (Ag0.55SbTe2)0.05(PbTe)0.95 were prepared by melting followed, variously, by slow or rapid cooling. Analyses of these samples by x-ray diffraction, electron microscopy, and scanning-microprobe measurements of the Seebeck coefficient led to the conclusion that these materials have a multiphase character on a scale of the order of millimeters, even though they appear homogeneous in x-ray diffraction and electron microscopy. The Seebeck measurements showed significant variations, including both n-type and p-type behavior in the same sample. These variations were found to be consistent with observed variations of ZT. The rapidly quenched samples were found to be less inhomogeneous than were the furnace-cooled ones; hence, rapid quenching was suggested as a basis of research on synthesizing more nearly uniform high-ZT samples.

Current-induced depairing in the Bi2Te3/FeTe interfacial superconductor

NASA Astrophysics Data System (ADS)

Kunchur, M. N.; Dean, C. L.; Moghadam, N. Shayesteh; Knight, J. M.; He, Q. L.; Liu, H.; Wang, J.; Lortz, R.; Sou, I. K.; Gurevich, A.

2015-09-01

We investigated current induced depairing in the Bi2Te3 /FeTe topological insulator-chalcogenide interface superconductor. The measured depairing current density provides information on the magnetic penetration depth and superfluid density, which in turn shed light on the nature of the normal state that underlies the interfacial superconductivity.

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae

PubMed Central

Ding, Keyuan; Rao, Feng; Lv, Shilong; Cheng, Yan; Wu, Liangcai; Song, Zhitang

2016-01-01

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respectively. The Ti1Sb2Te5 based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge2Sb2Te5 based one. The enhancements may be caused by substantially increased concentration of TiTe2 nano-lamellae in crystalline Ti1Sb2Te5 phase. The highly electrical conduction and lowly thermal dissipation of the TiTe2 nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe2)n(Sb2Te3)m pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications. PMID:27469931

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae.

PubMed

Ding, Keyuan; Rao, Feng; Lv, Shilong; Cheng, Yan; Wu, Liangcai; Song, Zhitang

2016-07-29

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respectively. The Ti1Sb2Te5 based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge2Sb2Te5 based one. The enhancements may be caused by substantially increased concentration of TiTe2 nano-lamellae in crystalline Ti1Sb2Te5 phase. The highly electrical conduction and lowly thermal dissipation of the TiTe2 nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe2)n(Sb2Te3)m pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications.

Masses of Te130 and Xe130 and Double-β-Decay Q Value of Te130

NASA Astrophysics Data System (ADS)

Redshaw, Matthew; Mount, Brianna J.; Myers, Edmund G.; Avignone, Frank T., III

2009-05-01

The atomic masses of Te130 and Xe130 have been obtained by measuring cyclotron frequency ratios of pairs of triply charged ions simultaneously trapped in a Penning trap. The results, with 1 standard deviation uncertainty, are M(Te130)=129.906222744(16)u and M(Xe130)=129.903509351(15)u. From the mass difference the double-β-decay Q value of Te130 is determined to be Qββ(Te130)=2527.518(13)keV. This is a factor of 150 more precise than the result of the AME2003 [G. Audi , Nucl. Phys. A729, 337 (2003)NUPABL0375-947410.1016/j.nuclphysa.2003.11.003].

EXAFS and electrical studies of new narrow-gap semiconductors: InTe1-xSex and In1-xGaxTe

NASA Astrophysics Data System (ADS)

Lebedev, A. I.; Michurin, A. V.; Sluchinskaya, I. A.; Demin, V. N.; Munro, I. H.

2000-12-01

The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In1-xGaxTe and InTe1-xSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

PubMed Central

Šedivý, L.; Čížek, J.; Belas, E.; Grill, R.; Melikhova, O.

2016-01-01

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies . It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe:Cl, and in CdZnTe:Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the density, subsequent annealing in Te pressure restores . The CdTe:Cl contains negatively-charged shallow traps interpreted as Rydberg states of A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities. PMID:26860684

Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

NASA Astrophysics Data System (ADS)

Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

THz Pulse Detection by Multilayered GeTe/Sb2Te3.

PubMed

Makino, Kotaro; Kuromiya, Shota; Takano, Keisuke; Kato, Kosaku; Nakajima, Makoto; Saito, Yuta; Tominaga, Junji; Iida, Hitoshi; Kinoshita, Moto; Nakano, Takashi

2016-11-30

We proposed and demonstrated terahertz (THz) pulse detection by means of multilayered GeTe/Sb 2 Te 3 phase-change memory materials that are also known as a multilayer topological insulator-normal insulator (MTN) system. THz time-domain spectroscopy measurement was performed for MTN films with different multilayer repetitions as well as a conventional as-grown Ge-Te-Sb (GST) alloy film. It was found that MTNs absorb THz waves and that the absorption coefficient depends on the number of layers, while the as-grown GST alloy film was almost transparent for THz waves. Simple MTN-based THz detection devices were fabricated, and the THz-induced change in the current signal was measured when a DC bias voltage was applied between the electrodes. We confirmed that irradiation of THz pulse causes a decrease in the resistance of the MTNs. This result indicates that our devices are capable of THz detection.

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

2017-09-01

Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be <1% over the area of a 7 cm × 7.5 cm wafer. The films are further characterized by Fourier-transform infrared spectroscopy, optical microscopy, and Hall measurements. Additionally, defect maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Punitha, K.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-12-07

In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method.more » It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.« less

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

NASA Astrophysics Data System (ADS)

Lü, Hai-Yan; Mu, Qi; Zhang, Lei; Lü, Yuan-Jie; Ji, Zi-Wu; Feng, Zhi-Hong; Xu, Xian-Gang; Guo, Qi-Xin

2015-12-01

Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal. Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

Analysis of Nanoprecipitates in a Na-Doped PbTe-SrTe Thermoelectric Material with a High Figure of Merit.

PubMed

Kim, Yoon-Jun; Zhao, Li-Dong; Kanatzidis, Mercouri G; Seidman, David N

2017-07-05

The dimensionless figure of merit, ZT, of bulk thermoelectric materials depends mainly on the transport properties of charge carriers and heat-carrying phonons. PbTe-4 mol % SrTe doped with 2 mol % Na (Pb 0.94 Na 0.02 Sr 0.04 Te) is a nanostructured material system that exhibits a ZT higher than 2. The precipitate size distribution of SrTe precipitates is believed to play a key role. This raises the question of whether its performance is limited by precipitate coarsening (Ostwald ripening) at elevated temperatures. Herein, we utilize an atom-probe tomography (APT) to study the number density and mean radii of precipitates in concert with partial radial distribution functions (RDFs) of individual atoms. We find that the SrTe precipitates actually contain oxygen: SrTe 1-x O x . We correlate this information with the overall ZT performance, specifically focusing on the electrical and lattice thermal conductivities after isothermal heat treatments at 300 and 400 °C for 7 days, followed by furnace cooling. Comparison of the samples annealed at 400 and 300 °C demonstrates significant coarsening of SrTe 1-x O x precipitates as well as strong segregation of oxygen impurities in the SrTe 1-x O x precipitates. Additionally, on the basis of the partial RDFs, the Na dopant atoms cluster with other Na atoms as well as with Pb, Te, and Sr atoms; clustering depends strongly on the annealing temperature and concomitantly affects the overall ZT values. We found that the coarsening slightly increases the lattice thermal conductivity and also increases the electrical conductivity, thereby having little or even a beneficial effect on the ZT values. Importantly, these findings demonstrate that APT enables quantitative analyses in three dimensions of the PbTe-4 mol % SrTe samples in addition to correlation of their properties with the thermoelectric performance.

Surface passivation for CdTe devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Design principles for HgTe based topological insulator devices

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

2013-07-01

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

Microscopic study of thermoelectric In-doped SnTe

NASA Astrophysics Data System (ADS)

Nan, Pengfei; Liu, Ruibin; Chang, Yunjie; Wu, Hongbo; Wang, Yumei; Yu, Richeng; Shen, Jun; Guo, Wei; Ge, Binghui

2018-06-01

SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.

Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

DOE PAGES

Zhang, Bingpo; Lu, Ping; Liu, Henan; ...

2015-06-05

Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (a PbTe = 0.6462 nm, a CdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurementsmore » under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.« less

Optimization of Monocrystalline MgxCd1-xTe/MgyCd1-yTe Double-Heterostructure Solar Cells

NASA Astrophysics Data System (ADS)

Becker, Jacob J.

Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of low Voc with the passing of the 1 V benchmark. Rapid progress has been made in driving the efficiency in these devices ever closer to the record presently held by polycrystalline thin-films. This achievement is primarily due to the utilization of a remote p-n heterojunction in which the heavily doped contact materials, which are so problematic in terms of increasing non-radiative recombination inside the absorber, are moved outside of the CdTe double heterostructure with two MgyCd1-yTe barrier layers to provide confinement and passivation at the CdTe surfaces. Using this design, the pursuit and demonstration of efficiencies beyond 20% in CdTe solar cells is reported through the study and optimization of the structure barriers, contacts layers, and optical design. Further development of a wider bandgap MgxCd1-xTe solar cell based on the same design is included with the intention of applying this knowledge to the development of a tandem solar cell constructed on a silicon subcell. The exploration of different hole-contact materials--ZnTe, CuZnS, and a-Si:H--and their optimization is presented throughout the work. Devices utilizing a-Si:H hole contacts exhibit open-circuit voltages of up to 1.11 V, a maximum total-area efficiency of 18.5% measured under AM1.5G, and an active-area efficiency of 20.3% for CdTe absorber based devices. The achievement of voltages beyond 1.1V while still maintaining relatively high fill factors with no rollover, either before or after open-circuit, is a promising indicator that this approach can result in devices surpassing the 22% record set by polycrystalline

Thermopower of thermoelectric materials with resonant levels: PbTe:Tl versus PbTe:Na and Cu1 -xNix

NASA Astrophysics Data System (ADS)

Wiendlocha, Bartlomiej

2018-05-01

Electronic transport properties of thermoelectric materials containing resonant levels are discussed by analyzing the two best known examples: copper-nickel metallic alloy (Cu-Ni, constantan) and thallium-doped lead telluride (PbTe:Tl). As a contrasting example of a material with a nonresonant impurity, sodium-doped PbTe is considered. Theoretical calculations of the electronic structure, Bloch spectral functions, and energy-dependent electrical conductivity at T =0 K are done using the Korringa-Kohn-Rostoker method with the coherent potential approximation and the Kubo-Greenwood formalism. The effect of a resonance on the residual resistivity and electronic lifetimes in PbTe is analyzed. By using the full Fermi integrals, room-temperature thermopower is calculated, confirming its increase in PbTe:Tl versus PbTe:Na, due to the presence of the resonant level. In addition, our calculations support the self-compensation model, in which the experimentally observed reduction of carrier concentration in PbTe:Tl against the nominal one is explained by the presence of n -type Te vacancies.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Phase Diagram of HgTe -ZnTe Pseudobinary and Density, Heat Capacity, and Enthalphy of Mixing of Hg(sub 1-x)Zn(sub x)Te Pseudobinary Melts

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao; Mazuruk, K.; Lehoczky, S. L.

1996-01-01

In this article, the solidus temperatures of the Hg(sub 1-x) Zn(sub x)Te pseudobinary phase diagram for several compositions in the low x region were measured by differential thermal analysis and the HgTe-ZnTe pseudobinary phase diagram was constructed. The densities of two HgZnTe melts, x = 0.10 and 0.16, were determined by an in situ pycnometric technique in a transparent furnace over, respectively, 110 and 50 C ranges of temperature. The thermodynamic properties of the melts, such as the heat capacity and enthalpy of mixing, were calculated for temperatures between the liquidus and 1500 C by assuming an associated solution model for the liquid phase.

Nanosized thin SnO₂ layers doped with Te and TeO₂ as room temperature humidity sensors.

PubMed

Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

2014-05-21

In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques-SEM, EDS in SEM, TEM, SAED, AES and electrical measurements-are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio R(Sn/Te) and the evaporation conditions. It is shown that as-deposited layers with R(Sn/Te) ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature-very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

Recycling of CdTe photovoltaic waste

DOEpatents

Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

1999-01-01

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

NASA Astrophysics Data System (ADS)

Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

2018-03-01

Admittance of MIS structures based on n( p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

Antimony diffusion in CdTe

DOE PAGES

Colegrove, Eric; Harvey, Steven P.; Yang, Ji -Hui; ...

2017-02-08

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.

LETTER: Test of Te profile invariance by sensitivity studies

NASA Astrophysics Data System (ADS)

Becker, G.

1992-06-01

The response of the electron temperature profile shape to variations of the electron heating and density profiles is investigated in different confinement regimes. It is shown that the changes in rTe = -Te/(dTe/dr) exceed the measurement error if the shape of the electron heat diffusivity χe(r) is kept fixed. The observed constancy of rTe(r) in the outer half of the plasma is incompatible with such a fixed χe(r) shape, i.e., a Te profile constraining mechanism must be present. Local transport laws of the form χe varies as rTe-α with α gtrsim 4 and χe propto (dTe/dr)α with α >= 2 yield the experimental stiffness of the Te(r) shape but conflict with empirical χe scalings. These results support the model of a self-organizing and adjusting χe(r) causing Te profile invariance

Band Degeneracy, Low Thermal Conductivity, and High Thermoelectric Figure of Merit in SnTe-CaTe Alloys

NASA Astrophysics Data System (ADS)

Al Rahal Al Orabi, R.; Mecholsky, N.; Hwang, J. P.; Kim, W.; Rhyee, J. S.; Wee, D.; Fornari, M.

Pure lead-free SnTe has limited thermoelectric potentials because of the low Seebeck coeffcients and the relatively large thermal conductivity. In this study, we provide experimental evidence and theoretical understanding that alloying SnTe with Ca greatly improves the transport properties leading to ZT of 1.35 at 873 K, the highest ZT value so far reported for singly doped SnTe materials. The introduction of Ca (0-9%) in SnTe induces multiple effects: (1) Ca replaces Sn and reduces the hole concentration due to Sn vacancies, (2) the energy gap increases limiting the bipolar transport, (3) several bands with larger effective masses become active in transport, and (4) the lattice thermal conductivity is reduced of about 70% due to the contribution of concomitant scattering terms associated with the alloy disorder and the presence of nanoscale precipitates. An effciency of 10% (for ΔT = 400 K) was predicted for high temperature thermoelectric power generation using SnTe-based n- and p-type materials.

LaTeX for Agricultural Extension Professionals

USDA-ARS?s Scientific Manuscript database

LaTeX is a free open source document preparation system for professional quality documents and presentation materials. Extension professionals, trying to reach their audience though various forms of printed and online resources, can benefit from the vast potential of LaTeX. Using LaTeX empowers the ...

Pressure-induced reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure

NASA Astrophysics Data System (ADS)

Shen, Junying; Heuckeroth, Claire; Deng, Yuhang; He, Qinglin; Liu, Hong Chao; Liang, Jing; Wang, Jiannong; Sou, Iam Keong; Schilling, James S.; Lortz, Rolf

2017-12-01

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron-based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We interpret our data in the context of a pressure-induced enhanced coupling of the Fe1+yTe interfacial layer with the Bi2Te3 surface state, which modifies the electronic properties of the interface layer in a way that superconductivity emerges and becomes further enhanced under pressure. This demonstrates the important role of the TI in the interfacial superconducting mechanism.

Preparation and structure of BiCrTeO{sub 6}: A new compound in Bi–Cr–Te–O system. Thermal expansion studies of Cr{sub 2}TeO{sub 6}, Bi{sub 2}TeO{sub 6} and BiCrTeO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vats, Bal Govind; Phatak, Rohan; Krishnan, K.

Graphical abstract: A new compound BiCrTeO{sub 6} in the Bi–Cr–Te–O system was prepared by solid state route and characterized by X-ray diffraction method. The crystal structure of BiCrTeO{sub 6} shows that there is one distinct site for bismuth (Bi) atom (pink color), one chromium rich (Cr/Te = 68/32) (blue/green color), one tellurium rich (Te/Cr = 68/32) sites (green/blue color), and one distinct site for oxygen (O) atom (red color) in the unit cell. All cations in this structure show an octahedral coordination with oxygen atoms at the corners. The thermogram (TG) of the compound in air shows that it ismore » stable up to 1103 K and decomposes thereafter. The thermal expansion behaviour of BiCrTeO{sub 6} was studied using high temperature X-ray diffraction method from room temperature to 923 K under vacuum of 10{sup −8} atmosphere and showed positive thermal expansion with the average volume thermal expansion coefficients of 16.0 × 10{sup −6}/K. - Highlights: • A new compound BiCrTeO{sub 6} in Bi–Cr–Te–O system was prepared and characterized. • The crystal structure of BiCrTeO{sub 6} was determined by Rietveld refinement method. • The structure of BiCrTeO{sub 6} shows an octahedral coordination for all the metal ions. • The thermal expansion behavior of BiCrTeO{sub 6} from room temperature to 923 K showed a positive thermal expansion. • The average volume thermal expansion coefficient for BiCrTeO{sub 6} is 16.0 × 10{sup −6}/K. - Abstract: A new compound BiCrTeO{sub 6} in Bi–Cr–Te–O system was prepared by solid state reaction of Bi{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and H{sub 6}TeO{sub 6} in oxygen and characterized by X-ray diffraction (XRD) method. It could be indexed on a trigonal lattice, with the space group P-31c, unit cell parameters a = 5.16268(7) Å and c = 9.91861(17) Å. The crystal structure of BiCrTeO{sub 6} was determined by Rietveld refinement method using the powder XRD data. Structure shows that there is one

A general route for the rapid synthesis of one-dimensional nanostructured single-crystal Te, Se and Se Te alloys directly from Te or/and Se powders

NASA Astrophysics Data System (ADS)

Zhou, Bo; Zhu, Jun-Jie

2006-03-01

A general and template-free 'disproportionation and reversal' route was developed to synthesize one-dimensional (1D) nanostructures of Te, Se and Se-Te alloys directly from Te or/and Se powders. The products were characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and scanning electron microscopy (SEM). Te nanorods and nanowires with a width varying from about 40 nm to about 300 nm, Se nanowires with a width of 60-100 nm and a length of 4-6 µm, and SexTe100-x alloy nanorods with x in a wide range, and with a width of 30-70 nm and an aspect ratio of three to five, were prepared. The mechanism of formation of the nanorods and nanowires and the effects of the experimental conditions, such as solution concentration, cooling rate, solvent nature and heating process, on the morphology and size of the products have been discussed. We believe that this general route and some other proper reversible processes between solid state and solution state can be extended to the transformations from various bulk materials into nanosized materials with various morphologies.

Analysis of Etched CdZnTe Substrates

NASA Astrophysics Data System (ADS)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

125Te NMR Probes of Tellurium Oxide Crystals: Shielding-Structure Correlations.

PubMed

Garaga, Mounesha N; Werner-Zwanziger, Ulrike; Zwanziger, Josef W

2018-01-16

The local environments around tellurium atoms in a series of tellurium oxide crystals were probed by 125 Te solid-state NMR spectroscopy. Crystals with distinct TeO n units (n from 3 to 6), including Na 2 TeO 3 , α-TeO 2 and γ-TeO 2 , Te 2 O(PO 4 ) 2 , K 3 LaTe 2 O 9 , BaZnTe 2 O 7 , and CsYTe 3 O 8 were studied. The latter four were synthesized through a solid-state process. X-ray diffraction was used to confirm the successful syntheses. The 125 Te chemical shift was found to exhibit a strong linear correlation with the Te coordination number. The 125 Te chemical-shift components (δ 11 , δ 22 , and δ 33 ) of the TeO 4 units were further correlated to the O-Te-O-bond angles. With the aid of 125 Te NMR, it is likely that these relations can be used to estimate the coordination states of Te atoms in unknown Te crystals and glasses.

HgCdTe barrier infrared detectors

NASA Astrophysics Data System (ADS)

Kopytko, M.; Rogalski, A.

2016-05-01

In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

NASA Astrophysics Data System (ADS)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

The synthesis of ternary acetylides with tellurium: Li 2 TeC 2 and Na 2 TeC 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Németh, Károly; Unni, Aditya K.; Kalnmals, Christopher

The synthesis of ternary acetylides Li 2TeC 2 and Na 2TeC 2 is presented as the first example of ternary acetylides with metalloid elements instead of transition metals. The synthesis was carried out by the direct reaction of the corresponding bialkali acetylides with tellurium powder in liquid ammonia. Alternatively, the synthesis of Na 2TeC 2 was also carried out by the direct reaction of tellurium powder and two equivalents of NaC 2H in liquid ammonia leading to Na 2TeC 2 and acetylene gas through an equilibrium containing the assumed NaTeC 2H molecules besides the reactants and the products. The resultingmore » disordered crystalline materials were characterized by X-ray diffraction and Raman spectroscopy. Implications of these new syntheses on the synthesis of other ternary acetylides with metalloid elements and transition metals are also discussed.« less

Growth and optical investigations of high quality individual CdTe/(Cd,Mg)Te core/shell nanowires.

PubMed

Wojnar, P; Płachta, J; Kret, S; Kaleta, A; Zaleszczyk, W; Szymura, M; Wiater, M; Baczewski, L T; Pietruczik, A; Karczewski, G; Wojtowicz, T; Kossut, J

2017-01-27

CdTe nanowires with the average diameter of only 40 nm coated with (Cd,Mg)Te shells are grown using Au-catalyzed vapor-liquid-solid growth mechanism in a system for molecular beam epitaxy. High optical quality of individual nanowires is revealed by means of low temperature cathodoluminescence and micro-luminescence. It is found that, the optical emission spectrum consists mostly of the near band edge emission without any significant contribution of defect related luminescence. Moreover, the importance of surface passivation with (Cd,Mg)Te coating shells is demonstrated.

HgZnTe-based detectors for LWIR NASA applications

NASA Technical Reports Server (NTRS)

Patten, Elizabeth A.; Kalisher, Murray H.

1990-01-01

The initial goal was to grow and characterize HgZnTe and determine if it indeed had the advantageous properties that were predicted. Researchers grew both bulk and liquid phase epitaxial HgZnTe. It was determined that HgZnTe had the following properties: (1) microhardness at least 50 percent greater than HgCdTe of equivalent bandgap; (2) Hg annealing rates of at least 2 to 4 times longer than HgCdTe; and (3) higher Hg vacancy formation energies. This early work did not focus on one specific composition (x-value) of HgZnTe since NASA was interested in HgZnTe's potential for a variety of applications. Since the beginning of 1989, researchers have been concentrating, however, on the liquid phase growth of very long wavelength infrared (VLWIR) HgZnTe (cutoff approx. equals 17 microns at 65K) to address the requirements of the Earth Observing System (EOS). Since there are no device models to predict the advantages in reliability one can gain with increased microhardness, surface stability, etc., one must fabricate HgZnTe detectors and assess their relative bake stability (accelerated life test behavior) compared with HgCdTe devices fabricated in the same manner. Researchers chose to fabricate HIT detectors as a development vehicle for this program because high performance in the VLWIR has been demonstrated with HgCdTe HIT detectors and the HgCdTe HIT process should be applicable to HgZnTe. HIT detectors have a significant advantage for satellite applications since these devices dissipate much less power than conventional photoconductors to achieve the same responsivity.

Temperature-Dependent Energy Gap Shift and Thermally Activated Transition in Multilayer CdTe/ZnTe Quantum Dots.

PubMed

Man, Minh Tan; Lee, Hong Seok

2015-10-01

We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O'Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0-6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3-19.8 meV.

HgCdTe Surface and Defect Study Program.

DTIC Science & Technology

1983-07-01

RESkSTIVITY. Rm T 10 12 10> 9 i0 1 0 9 I i i i i TI/Au TI AI/Ni Ti/Ni In GATE METAL Figure 8. The Effect of Gate " fetal Type on dc Resistivity of 1500.4...2. J.A. Wilson, V.A. Cotton, J.A. Silkerman, 0. Lacer , W.E. Spicer and P. Morgen, J. Vac. Sci. Tech., Al (1983), 1719. 3. B.K. Janorsek, R.C

Lattice thermal transport in group II-alloyed PbTe

NASA Astrophysics Data System (ADS)

Xia, Yi; Hodges, James M.; Kanatzidis, Mercouri G.; Chan, Maria K. Y.

2018-04-01

PbTe, one of the most promising thermoelectric materials, has recently demonstrated a thermoelectric figure of merit (ZT) of above 2.0 when alloyed with group II elements. The improvements are due mainly to significant reduction of lattice thermal conductivity (κl), which was in turn attributed to nanoparticle precipitates. However, a fundamental understanding of various phonon scattering mechanisms within the bulk alloy is still lacking. In this work, we apply the newly-developed density-functional-theory-based compressive sensing lattice dynamics approach to model lattice heat transport in PbTe, MTe, and Pb0.94M0.06Te (M = Mg, Ca, Sr, and Ba) and compare our results with experimental measurements, with focus on the strain effect and mass disorder scattering. We find that (1) CaTe, SrTe, and BaTe in the rock-salt structure exhibit much higher κl than PbTe, while MgTe in the same structure shows anomalously low κl; (2) lattice heat transport of PbTe is extremely sensitive to static strain induced by alloying atoms in solid solution form; (3) mass disorder scattering plays a major role in reducing κl for Mg/Ca/Sr-alloyed PbTe through strongly suppressing the lifetimes of intermediate- and high-frequency phonons, while for Ba-alloyed PbTe, precipitated nanoparticles are also important.

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection

NASA Astrophysics Data System (ADS)

Reddy, M.; Peterson, J. M.; Lofgreen, D. D.; Franklin, J. A.; Vang, T.; Smith, E. P. G.; Wehner, J. G. A.; Kasai, I.; Bangs, J. W.; Johnson, S. M.

2008-09-01

Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and highly functional third-generation infrared (IR) focal-panel arrays (FPAs). We have described here the importance of wafer maps of HgCdTe thickness, composition, and the macrodefects across the wafer not only to qualify material properties against design specifications but also to diagnose and classify the MBE-growth-related issues on large-area wafers. The paper presents HgCdTe growth with exceptionally uniform composition and thickness and record low macrodefect density on large Si wafers up to 6-in in diameter for the detection of short-wave (SW), mid-wave (MW), and long-wave (LW) IR radiation. We have also proposed a cost-effective approach to use the growth of HgCdTe on low-cost Si substrates to isolate the growth- and substrate-related problems that one occasionally comes across with the CdZnTe substrates and tune the growth parameters such as growth rate, cutoff wavelength ( λ cutoff) and doping parameters before proceeding with the growth on costly large-area CdZnTe substrates. In this way, we demonstrated HgCdTe growth on large CdZnTe substrates of size 7 cm × 7 cm with excellent uniformity and low macrodefect density.

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-06-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 μm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions.

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

DOE PAGES

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; ...

2015-02-11

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 10 2. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 -5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 -5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

Recycling of CdTe photovoltaic waste

DOEpatents

Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

1999-04-27

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures.

PubMed

Chen, Mingyang; Chen, Xiaoyu; Yang, Huan; Du, Zengyi; Wen, Hai-Hu

2018-06-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi 2 Se 3 or Bi 2 Te 3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect-induced superconductivity in the Bi 2 Te 3 thin film on top of the iron-based superconductor FeTe 0.55 Se 0.45 . By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ 4 y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi 2 Te 3 /FeTe 0.55 Se 0.45 heterostructures.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

PubMed Central

Du, Zengyi

2018-01-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance.

PubMed

Zheng, Zheng; Su, Xianli; Deng, Rigui; Stoumpos, Constantinos; Xie, Hongyao; Liu, Wei; Yan, Yonggao; Hao, Shiqiang; Uher, Ctirad; Wolverton, Chris; Kanatzidis, Mercouri G; Tang, Xinfeng

2018-02-21

In this study, a series of Ge 1-x Mn x Te (x = 0-0.21) compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into GeTe on the structure and thermoelectric properties of Ge 1-x Mn x Te is profound. With increasing content of MnTe, the structure of the Ge 1-x Mn x Te compounds gradually changes from rhombohedral to cubic, and the known R3m to Fm-3m phase transition temperature of GeTe moves from 700 K closer to room temperature. First-principles density functional theory calculations show that alloying MnTe into GeTe decreases the energy difference between the light and heavy valence bands in both the R3m and Fm-3m structures, enhancing a multiband character of the valence band edge that increases the hole carrier effective mass. The effect of this band convergence is a significant enhancement in the carrier effective mass from 1.44 m 0 (GeTe) to 6.15 m 0 (Ge 0.85 Mn 0.15 Te). In addition, alloying with MnTe decreases the phonon relaxation time by enhancing alloy scattering, reduces the phonon velocity, and increases Ge vacancies all of which result in an ultralow lattice thermal conductivity of 0.13 W m -1 K -1 at 823 K. Subsequent doping of the Ge 0.9 Mn 0.1 Te compositions with Sb lowers the typical very high hole carrier concentration and brings it closer to its optimal value enhancing the power factor, which combined with the ultralow thermal conductivity yields a maximum ZT value of 1.61 at 823 K (for Ge 0.86 Mn 0.10 Sb 0.04 Te). The average ZT value of the compound over the temperature range 400-800 K is 1.09, making it the best GeTe-based thermoelectric material.

Toxicity evaluation of hydrophilic CdTe quantum dots and CdTe@SiO2 nanoparticles in mice.

PubMed

Sadaf, Asma; Zeshan, Basit; Wang, Zhuyuan; Zhang, Ruohu; Xu, Shuhong; Wang, Chunlei; Cui, Yiping

2012-11-01

Quantum dots have drawn tremendous attention in the field of in vitro and small animal in vivo fluorescence imaging in the last decade. However, concerns over the cytotoxicity of their heavy metal constituents have limited their use in clinical applications. Here, we report our comparative studies on the toxicities of quantum dots (QDs) and silica coated CdTe nanoparticles (NPs) to mice after intravenous injection. The blood cells analysis showed significant increased level of white blood cells (WBCs) in groups treated with CdTe QDs as compared to the control while red blood cells (RBCs) and platelet counts were normal in treated as well as control groups. The concentration of biochemical markers of hepatic damage, alanine amino transferase (ALT) and aspartate aminotransferase (AST) were in the normal range in all the groups. However, renal function analyses of mice showed significantly increased in the concentration of blood urea nitrogen (BUN) and creatinine (CREA) in mice treated with CdTe QDs while remained within normal ranges in both the CdTe@SiO2 NPs and control group. The results of histopathology showed that the CdTe QDs caused mild nephrotoxicity while other organs were normal and no abnormalities were detected in control and CdTe@SiO2 treated group. These findings suggest that the nephrotoxicity could be minimized by silica coating which would be useful for many biomedical applications.

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

2013-12-16

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

Recycling of CdTe photovoltaic waste

DOEpatents

Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

1999-04-27

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

Anomalous 125Te Nuclear Spin Relaxation Coincident with Charge Kondo Behavior in Superconducting Pb1-xTlxTe

NASA Astrophysics Data System (ADS)

Mukuda, Hidekazu; Matsumura, Takashi; Maki, Shota; Yashima, Mitsuharu; Kitaoka, Yoshio; Miyake, Kazumasa; Murakami, Hironaru; Giraldo-Gallo, Paula; Geball, Theodore H.; Fisher, Ian R.

2018-02-01

We report the results of a 125Te NMR study of single crystalline Pb1-xTlxTe (x = 0, 0.35, 1.0%) as a window on the novel electronic states associated with the thallium impurities in PbTe. The Knight shift is enhanced as x increases, corresponding to an increase in the average density of states (DOS) coupled to a strong spatial variation in the local DOS surrounding each Tl dopant. Remarkably, for the superconducting composition (x = 1.0%), the 125Te nuclear spin relaxation rate (1/T1T) for Te ions that are close to the Tl dopants is unexpectedly enhanced in the normal state below a characteristic temperature of ˜10 K, below which the resistivity experiences an upturn. Such a simultaneous upturn in both the resistivity and (1/T1T) was not suppressed in the high magnetic field. We suggest that these observations are consistently accounted for by dynamical charge fluctuations in the absence of paramagnetism, which is anticipated by the charge Kondo scenario associated with the Tl dopants. In contrast, such anomalies were not detected in the non-superconducting samples (x = 0 and 0.35%), suggesting a connection between dynamical valence fluctuations and the occurrence of superconductivity in Pb1-xTlxTe.

Features of the electronic structure of FeTe compounds

NASA Astrophysics Data System (ADS)

Grechnev, G. E.; Lyogenkaya, A. A.; Panfilov, A. S.; Logosha, A. V.; Kotlyar, O. V.; Gnezdilov, V. P.; Makarova, I. P.; Chareev, D. A.; Mitrofanova, E. S.

2015-12-01

A theoretical and experimental study of the electronic structure and nature of the chemical bonds in FeTe compounds in antiferromagnetic (AFM) and paramagnetic phases was carried out. It is established that the nature of the chemical bonds is mainly metallic, and the presence of covalent bonds Fe-Te and Te-Te helps to stabilize the structural distortions of the tetragonal phase of FeTe in the low-temperature region. It is found that the bicollinear AFM structure corresponds to the ground state of the FeTe compound and the calculated value of the magnetic moment MFe = -2.4μB is in good agreement with the data from neutron diffraction measurements. At the same time, the Fermi surface (FS) of the low-temperature AFM phase is radically different from the FS of the paramagnetic FeTe. Reconstructing the FS can lead to a sign change of the Hall coefficient observed in FeTe. The calculation results serve as evidence of the fact that the electronic structures and magnetic properties of FeTe are well-described by the model of itinerant d-electrons and the density functional theory (DFT-GGA).

CdTe Photovoltaics for Sustainable Electricity Generation

NASA Astrophysics Data System (ADS)

Munshi, Amit; Sampath, Walajabad

2016-09-01

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

NASA Astrophysics Data System (ADS)

Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

2018-01-01

At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

Arabidopsis GOLDEN2-LIKE (GLK) transcription factors activate jasmonic acid (JA)-dependent disease susceptibility to the biotrophic pathogen Hyaloperonospora arabidopsidis, as well as JA-independent plant immunity against the necrotrophic pathogen Botrytis cinerea.

PubMed

Murmu, Jhadeswar; Wilton, Michael; Allard, Ghislaine; Pandeya, Radhey; Desveaux, Darrell; Singh, Jas; Subramaniam, Rajagopal

2014-02-01

Arabidopsis thaliana GOLDEN2-LIKE (GLK1 and 2) transcription factors regulate chloroplast development in a redundant manner. Overexpression of AtGLK1 (35S:AtGLK1) in Arabidopsis also confers resistance to the cereal pathogen Fusarium graminearum. To further elucidate the role of GLK transcription factors in plant defence, the Arabidopsis glk1 glk2 double-mutant and 35S:AtGLK1 plants were challenged with the virulent oomycete pathogen Hyaloperonospora arabidopsidis (Hpa) Noco2. Compared with Col-0, glk1 glk2 plants were highly resistant to Hpa Noco2, whereas 35S:AtGLK1 plants showed enhanced susceptibility to this pathogen. Genetic studies suggested that AtGLK-mediated plant defence to Hpa Noco2 was partially dependent on salicylic acid (SA) accumulation, but independent of the SA signalling protein NONEXPRESSOR OF PATHOGENESIS-RELATED 1 (NPR1). Pretreatment with jasmonic acid (JA) dramatically reversed Hpa Noco2 resistance in the glk1 glk2 double mutant, but only marginally affected the 35S:AtGLK1 plants. In addition, overexpression of AtGLK1 in the JA signalling mutant coi1-16 did not increase susceptibility to Hpa Noco2. Together, our GLK gain-of-function and loss-of-function experiments suggest that GLK acts upstream of JA signalling in disease susceptibility to Hpa Noco2. In contrast, glk1 glk2 plants were more susceptible to the necrotrophic fungal pathogen Botrytis cinerea, whereas 35S:AtGLK1 plants exhibited heightened resistance which could be maintained in the absence of JA signalling. Together, the data reveal that AtGLK1 is involved in JA-dependent susceptibility to the biotrophic pathogen Hpa Noco2 and in JA-independent resistance to the necrotrophic pathogen B. cinerea. © 2013 HER MAJESTY THE QUEEN IN RIGHT OF CANADA. MOLECULAR PLANT PATHOLOGY © 2013 BSPP. REPRODUCED WITH THE PERMISSION OF THE MINISTER OF AGRICULTURE AND AGRI-FOOD CANADA.

Parasitism by Cuscuta pentagona sequentially induces JA and SA defence pathways in tomato.

PubMed

Runyon, Justin B; Mescher, Mark C; Felton, Gary W; De Moraes, Consuelo M

2010-02-01

While plant responses to herbivores and pathogens are well characterized, responses to attack by other plants remain largely unexplored. We measured phytohormones and C(18) fatty acids in tomato attacked by the parasitic plant Cuscuta pentagona, and used transgenic and mutant plants to explore the roles of the defence-related phytohormones salicylic acid (SA) and jasmonic acid (JA). Parasite attachment to 10-day-old tomato plants elicited few biochemical changes, but a second attachment 10 d later elicited a 60-fold increase in JA, a 30-fold increase in SA and a hypersensitive-like response (HLR). Host age also influenced the response: neither Cuscuta seedlings nor established vines elicited a HLR in 10-day-old hosts, but both did in 20-day-old hosts. Parasites grew larger on hosts deficient in SA (NahG) or insensitive to JA [jasmonic acid-insensitive1 (jai1)], suggesting that both phytohormones mediate effective defences. Moreover, amounts of JA peaked 12 h before SA, indicating that defences may be coordinated via sequential induction of these hormones. Parasitism also induced increases in free linolenic and linoleic acids and abscisic acid. These findings provide the first documentation of plant hormonal signalling induced by a parasitic plant and show that tomato responses to C. pentagona display characteristics similar to both herbivore- and pathogen-induced responses.

A Chemical, High-Temperature Way to Ag1.9Te via Quasi-Topotactic Reaction of Stuetzite-type Ag1.54Te: Structural and Thermoelectric Properties.

PubMed

Baumer, Franziska; Nilges, Tom

2017-11-20

Semiconducting silver tellurides gained reasonable interest in the past years due to its thermoelectric, magneto-caloric, and nonlinear optic properties. Nanostructuring has been frequently used to address quantum-confinement effects of minerals and synthetic compounds in the Ag-Te system. Here, we report on the structural, thermal, and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te. By a quasi-topotactic reaction upon tellurium evaporation Ag 1.54 Te can be transferred to Ag 1.9 Te after heat treatment. Crystal structures, thermal and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te were determined by ex situ and in situ experiments. This method represents an elegant chemical way to Ag 1.9 Te, which was so far only accessible electrochemically via electrochemical removal of silver from the mineral hessite (Ag 2 Te). The mixed conductors show reasonable high total electric conductivities, very low thermal conductivities, and large Seebeck coefficients, which result in a significant high thermoelectric figure of 0.57 at 680 K.

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

2014-04-09

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

PubMed Central

Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

2014-01-01

In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties. PMID:24854359

Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

NASA Astrophysics Data System (ADS)

Tarasenko, S. A.; Durnev, M. V.; Nestoklon, M. O.; Ivchenko, E. L.; Luo, Jun-Wei; Zunger, Alex

2015-02-01

HgTe is a band-inverted compound which forms a two-dimensional topological insulator if sandwiched between CdTe barriers for a HgTe layer thickness above the critical value. We describe the fine structure of Dirac states in the HgTe/CdTe quantum wells of critical and close-to-critical thicknesses and show that the necessary creation of interfaces brings in another important physical effect: the opening of a significant anticrossing gap between the tips of the Dirac cones. The level repulsion driven by the natural interface inversion asymmetry of zinc-blende heterostructures considerably modifies the electron states and dispersion but preserves the topological transition at the critical thickness. By combining symmetry analysis, atomistic calculations, and extended k .p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. We discuss how the fingerprints of the predicted zero-magnetic-field splitting of the Dirac cones could be detected experimentally by studying magnetotransport phenomena, cyclotron resonance, Raman scattering, and THz radiation absorption.

Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

NASA Astrophysics Data System (ADS)

Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

2015-01-01

CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as Aa site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from Aa (occupied) to Aa (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

Raman spectroscopy of glasses in the As-Te system

NASA Astrophysics Data System (ADS)

Tverjanovich, A.; Rodionov, K.; Bychkov, E.

2012-06-01

For the first time, the Raman spectra of AsxTe1-x glasses, 0.2≤x≤0.6, have been measured over the entire glass-forming range. The spectra exhibit three broad spectral features attributed to vibrations of structural units having Te-Te, As-Te and As-As bonds. The observed chemical disorder in the glasses is discussed on the basis of partial bond fractions derived from the integrated intensity of the Raman modes. The underlying structural model suggests a dissociation of AsTe- or As2Te3-related units in the glass melt. The spectra of glasses quenched from different temperatures, as well as those of the annealed vitreous alloys, are consistent with predictions of the model.

Design Strategies for High-Efficiency CdTe Solar Cells

NASA Astrophysics Data System (ADS)

Song, Tao

With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness < 3 microm. Hence, either a thicker absorber or an appropriate back-surface-field layer is a requisite for reducing the back-surface recombination. When integrating layers into devices, more careful design of interfaces is needed. One consideration is the emitter/absorber interface. It is shown that a positive conduction-band offset DeltaEC ("spike") at the interface is beneficial to cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations

Masses of {sup 130}Te and {sup 130}Xe and Double-{beta}-Decay Q Value of {sup 130}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redshaw, Matthew; Mount, Brianna J.; Myers, Edmund G.

The atomic masses of {sup 130}Te and {sup 130}Xe have been obtained by measuring cyclotron frequency ratios of pairs of triply charged ions simultaneously trapped in a Penning trap. The results, with 1 standard deviation uncertainty, are M({sup 130}Te)=129.906 222 744(16) u and M({sup 130}Xe)=129.903 509 351(15) u. From the mass difference the double-{beta}-decay Q value of {sup 130}Te is determined to be Q{sub {beta}}{sub {beta}}({sup 130}Te)=2527.518(13) keV. This is a factor of 150 more precise than the result of the AME2003 [G. Audi et al., Nucl. Phys. A729, 337 (2003)].

Vaporization thermodynamic studies by high-temperature mass spectrometry on some three-phase regions over the MnO-TeO2 binary line in the Mn-Te-O ternary system.

PubMed

Narasimhan, T S Lakshmi; Sai Baba, M; Viswanathan, R

2006-12-28

Knudsen effusion mass spectrometric measurements have been performed in the temperature range of 850-950 K over four three-phase mixtures, each phase mixture having at least one phase lying on the MnO-TeO2 binary line of the Mn-Te-O phase diagram, and the rest of the phases lying above this binary line. The three-phase mixtures investigated are Mn3O4 + MnO + Mn6Te5O16; Mn3O4 + Mn6Te5O16 + MnTeO3; Mn3O4 + Mn3TeO6 + MnTeO3; and Mn3TeO6 + MnTeO3 + Mn2Te3O8. The vapor pressures of the gaseous species TeO2, TeO, and Te2 over these three-phase mixtures were measured, and various heterogeneous solid-gas reactions were evaluated along with the homogeneous gas-phase reaction TeO2(g) + 0.5Te2(g) = 2 TeO(g). The enthalpy and Gibbs free energy of formation of the four ternary Mn-Te-O phases were deduced at T = 900 K. These values (in kJ.mol-1), along with the estimated uncertainties in them are Delta(f)H(o)m = 4150 +/- 19, 752 +/- 11, 1710 +/- 11, 1924 +/- 40, and Delta(f)G(o)m= 2835 +/- 28, 511 +/- 11, 1254 +/- 19, 1238 +/- 38, for Mn6Te5O16, MnTeO3, Mn3TeO6, and Mn2Te3O8, respectively. A thermochemical assessment was made to examine the conditions under which the ternary Mn-Te-O phases could be formed on a stainless steel clad of mixed-oxide-fueled (MO2; M = U + Pu) fast breeder nuclear reactors. The phase Mn3TeO6 could be formed when the fuel is even slightly hyperstoichiometric (O/M = 2.0002) and the phase Mn6Te5O16 could also be formed when O/M = 2.0004. The threshold tellurium potential for the formation of Mn3TeO6 is higher than that for MnTe0.80 and CrTe1.10, but is comparable to that for MoTe1.10, and even lower than that for FeTe0.81 or NiTe0.63.

BOREAS TE-7 Dendrology Data

NASA Technical Reports Server (NTRS)

Hall, Forrest G. (Editor); Papagno, Andrea (Editor); Varem-Sanders, T. M. L.; Campbell, I. D.

2000-01-01

The BOREAS TE-7 team collected data sets in support of its efforts to characterize and interpret information on the sapflow and dendrology of boreal vegetation. This data set contains dendrology measurements, consisting of tree ring width and density taken at several points within each ring,.Measurements were taken near the TE towers at the OJP and OBS sites in NSA. In the SSA, measurements were taken near the TE towers at the MIX, OBS, and OJP sites; at the AIM- 1 3 and BMH-9 sites; and near the TF-YJP site. All data were collected during the summer of 1994. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

NASA Astrophysics Data System (ADS)

Aqariden, F.; Elsworth, J.; Zhao, J.; Grein, C. H.; Sivananthan, S.

2012-10-01

Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation-absorber-passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented.

Measurement of proximity induced superconductivity in MoTe2

NASA Astrophysics Data System (ADS)

Wang, Wudi; Liu, Minhao; Gibson, Quinn; Cava, Â. R. J.; Ong, N. P.

MoTe2 is predicted to have type-II Weyl nodes and many of its novel transport properties have been predicted and studied. Here we reported an experiment on the superconductivity in MoTe2 induced by proximity effect. We fabricated a SQUIPT-like device on mechanical exfoliated MoTe2 micro flakes via nanofabrication. The device contains an Aluminum tunneling probe with AlOx barrier and Al contact. We measured tunneling current from probe to the sample. By fitting the differential conductance (dI/dV), we obtained the superconducting gaps in MoTe2. The dependence of gap in MoTe2 on temperature and magnetic field was measured. We also measured the current-phase relation in Al-MoTe2-Al Josephson junctions with an inductance based measurement technique.

Producible Alternative to CdTe for Epitaxy (PACE-2) of LWIR HgCdTe

DTIC Science & Technology

1984-01-01

esmv and .de~aty "p bisto momnberl isrepor cover the progre made toward the achievenientof device quality LWIR HgCdTe on an alternate substrte...initial phase of the research program en- titled, _Producible Alternative to CdTe for Epitaxyý(PACE-2) of LWIR HgCJie". Also described are alternate...objective of this program is the demonstration of the feasibility of PACE-2 technology through fabrication and evaluation of multi- plexed LWIR hybrid

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

NASA Astrophysics Data System (ADS)

Agekyan, V. F.; Akai, I.; Vasil'Ev, N. N.; Karasawa, T.; Karczewski, G.; Serov, A. Yu.; Filosofov, N. G.

2007-06-01

The emission spectra of Zn1-x Mn x Te/Zn0.6Mg0.4Te and Cd1-x Mn x Te/Cd0.5Mg0.5Te quantum-well structures with different manganese concentrations and quantum-well widths are studied at excitation power densities ranging from 105 to 107 W cm-2. Under strong optical pumping, intracenter luminescence of Mn2+ ions degrades as a result of the interaction of excited managanese ions with high-density excitons. This process is accompanied by a strong broadening of the emission band of quantum-well excitons due to the exciton-exciton interaction and saturation of the exciton ground state. Under pumping at a power density of 105 W cm-2, stimulated emission of quantum-well excitons arises in CdTe/Cd0.5Mg0.5Te. The luminescence kinetics of the quantum-well and barrier excitons is investigated with a high temporal resolution. The effect of the quantum-well width and the managanese concentration on the kinetics and band shape of the Mn2+ intracenter luminescence characterized by the contribution of the manganese interface ions is determined.

Importance of the van Hove singularity in superconducting PdTe2

NASA Astrophysics Data System (ADS)

Kim, Kyoo; Kim, Sooran; Kim, J. S.; Kim, Heejung; Park, J.-H.; Min, B. I.

2018-04-01

We have investigated the electronic, phononic, and superconducting properties of the transition-metal dichalcogenide superconductor PdTe2, and explored the origin of different superconducting behaviors between PdTe2 and its isostructural PtTe2 that is nonsuperconducting. We have found that the saddle-point van Hove singularity (vHs) near the Fermi level, which interacts strongly with Te phonon modes, plays an important role in the BCS-type superconductivity of PdTe2. We show that, with electron doping, the vHs in PdTe2 shifts down toward the Fermi level to enhance Tc, as is consistent with the observed enhancement of Tc in Cu-doped PdTe2. We ascribe the absence of superconductivity in PtTe2 to the different dispersion behavior of the saddle-point vHs band from that of PdTe2. We also suggest that this difference in the vHs band behaviors is responsible for the different structural responses of PdTe2 and PtTe2 to external pressure.

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

NASA Astrophysics Data System (ADS)

Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.

2017-11-01

We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

NASA Astrophysics Data System (ADS)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Electronic transport properties of intermediately coupled superconductors: PdTe2 and Cu0.04PdTe2

NASA Astrophysics Data System (ADS)

Hooda, M. K.; Yadav, C. S.

2018-01-01

We have investigated the electrical resistivity (1.8-480 K), Seebeck coefficient (2.5-300 K) and thermal conductivity (2.5-300 K) of PdTe2 and 4% Cu intercalated PdTe2 compounds. The electrical resistivity for the compounds shows a Bloch-Gruneisen-type linear temperature (T) dependence for 100 \\text{K}, and Fermi liquid behavior (ρ (T) \\propto T2) for T<50 \\text{K} . Seebeck coefficient data exhibit a strong competition between Normal (N) and Umklapp (U) scattering processes at low T. The low-T, thermal conductivity (κ) of the compounds is strongly dominated by the electronic contribution, and exhibits a rare linear T-dependence below 10 K. However, high-T, κ (T) shows the usual 1/T -dependence, dominated by the U-scattering process. The electron-phonon coupling parameters, estimated from the low-T, specific-heat data and first-principle electronic structure calculations suggest that PdTe2 and Cu0.04PdTe2 are intermediately coupled superconductors.

Transcriptome Analysis in Haematococcus pluvialis: Astaxanthin Induction by Salicylic Acid (SA) and Jasmonic Acid (JA).

PubMed

Gao, Zhengquan; Li, Yan; Wu, Guanxun; Li, Guoqiang; Sun, Haifeng; Deng, Suzhen; Shen, Yicheng; Chen, Guoqiang; Zhang, Ruihao; Meng, Chunxiao; Zhang, Xiaowen

2015-01-01

Haematococcus pluvialis is an astaxanthin-rich microalga that can increase its astaxanthin production by salicylic acid (SA) or jasmonic acid (JA) induction. The genetic transcriptome details of astaxanthin biosynthesis were analyzed by exposing the algal cells to 25 mg/L of SA and JA for 1, 6 and 24 hours, plus to the control (no stress). Based on the RNA-seq analysis, 56,077 unigenes (51.7%) were identified with functions in response to the hormone stress. The top five identified subcategories were cell, cellular process, intracellular, catalytic activity and cytoplasm, which possessed 5600 (~9.99%), 5302 (~9.45%), 5242 (~9.35%), 4407 (~7.86%) and 4195 (~7.48%) unigenes, respectively. Furthermore, 59 unigenes were identified and assigned to 26 putative transcription factors (TFs), including 12 plant-specific TFs. They were likely associated with astaxanthin biosynthesis in Haematococcus upon SA and JA stress. In comparison, the up-regulation of differential expressed genes occurred much earlier, with higher transcript levels in the JA treatment (about 6 h later) than in the SA treatment (beyond 24 h). These results provide valuable information for directing metabolic engineering efforts to improve astaxanthin biosynthesis in H. pluvialis.

Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride

NASA Astrophysics Data System (ADS)

Cho, Suyeon; Kang, Se Hwang; Yu, Ho Sung; Kim, Hyo Won; Ko, Wonhee; Hwang, Sung Woo; Han, Woo Hyun; Choe, Duk-Hyun; Jung, Young Hwa; Chang, Kee Joo; Lee, Young Hee; Yang, Heejun; Wng Kim, Sung

2017-06-01

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have received great attentions because of diverse quantum electronic states such as topological insulating (TI), Weyl semimetallic (WSM) and superconducting states. Recently, the superconducting states emerged in pressurized semimetallic TMDs such as MoTe2 and WTe2 have become one of the central issues due to their predicted WSM states. However, the difficulty in synthetic control of chalcogen vacancies and the ambiguous magneto transport properties have hindered the rigorous study on superconducting and WSM states. Here, we report the emergence of superconductivity at 2.1 K in Te-deficient orthorhombic T d-MoTe2-x with an intrinsic electron-doping, while stoichiometric monoclinic 1T‧-MoTe2 shows no superconducting state down to 10 mK, but exhibits a large magnetoresistance of 32 000% at 2 K in a magnetic field of 14 T originating from nearly perfect compensation of electron and hole carriers. Scanning tunnelling spectroscopy and synchrotron x-ray diffraction combined with theoretical calculations clarify that Te vacancies trigger superconductivity via intrinsic electron doping and the evolution of the T d phase from the 1T‧ phase below 200 K. Unlike the pressure-induced superconducting state of monoclinic MoTe2, this Te vacancy-induced superconductivity is emerged in orthorhombic MoTe2, which is predicted as Weyl semimetal, via electron-doping. This chalcogen vacancy induced-superconductivity provides a new route for cultivating superconducting state together with WSM state in 2D van der Waals materials.

Identifying Au-based Te alloys for optical data storage

NASA Astrophysics Data System (ADS)

Wamwangi, D.; Detemple, R.; Woeltgens, H.-W.; Wuttig, M.; Zhang, X.

2004-06-01

Au18Sb23Te59 and Au19In26Te55 have been investigated to determine their suitability as phase change recording alloys. Recrystallization experiments identify Au18Sb23Te59 as a suitable phase change material with a recrystallization time of 110 ns and high optical contrast. Coupled to the high optical contrast is a considerable density increase of 4% upon crystallization which allows phase change recording for the Au18Sb23Te59 alloy. On the other hand no recrystallization has been observed optically for Au19In26Te55 due to its low optical contrast of less than 1%. This is related to a lower density contrast of 2%. The crystallization for the Au18Sb23Te59 and Au19In26Te55 alloys observed from temperature-dependent sheet resistance measurements have yielded transition temperatures of 113 and 175 °C, and activation barriers of 1.61±0.01 eV and 2.42±0.02 eV, respectively. We report a cubic structure (a=2.99±0.002 Å) for the Au18Sb23Te59 alloy and a chalcopyrite structure (a=6.50±0.018 Å and 12.27±0.025 Å) for the Au19In26Te55 material. These results confirm that suitable phase change alloys possess cubic structures rather than the chalcopyrite structure typical for sp3 bonded semiconductors.

FERMI Observations of TeV-Selected Active Galactic Nuclei

DOE PAGES

Abdo, A. A.; Ackermann, M.; Ajello, M.; ...

2009-12-04

Here, we report on observations of TeV-selected active galactic nuclei (AGNs) made during the first 5.5 months of observations with the Large Area Telescope (LAT) on-board the Fermi Gamma-ray Space Telescope (Fermi). In total, 96 AGNs were selected for study, each being either (1) a source detected at TeV energies (28 sources) or (2) an object that has been studied with TeV instruments and for which an upper limit has been reported (68 objects). The Fermi observations show clear detections of 38 of these TeV-selected objects, of which 21 are joint GeV-TeV sources, and 29 were not in the thirdmore » EGRET catalog. For each of the 38 Fermi-detected sources, spectra and light curves are presented. Most can be described with a power law of spectral index harder than 2.0, with a spectral break generally required to accommodate the TeV measurements. Based on an extrapolation of the Fermi spectrum, we identify sources, not previously detected at TeV energies, which are promising targets for TeV instruments. Finally, evidence for systematic evolution of the γ-ray spectrum with redshift is presented and discussed in the context of interaction with the extragalactic background light.« less

Transcriptome sequencing and de novo analysis of cytoplasmic male sterility and maintenance in JA-CMS cotton.

PubMed

Yang, Peng; Han, Jinfeng; Huang, Jinling

2014-01-01

Cytoplasmic male sterility (CMS) is the failure to produce functional pollen, which is inherited maternally. And it is known that anther development is modulated through complicated interactions between nuclear and mitochondrial genes in sporophytic and gametophytic tissues. However, an unbiased transcriptome sequencing analysis of CMS in cotton is currently lacking in the literature. This study compared differentially expressed (DE) genes of floral buds at the sporogenous cells stage (SS) and microsporocyte stage (MS) (the two most important stages for pollen abortion in JA-CMS) between JA-CMS and its fertile maintainer line JB cotton plants, using the Illumina HiSeq 2000 sequencing platform. A total of 709 (1.8%) DE genes including 293 up-regulated and 416 down-regulated genes were identified in JA-CMS line comparing with its maintainer line at the SS stage, and 644 (1.6%) DE genes with 263 up-regulated and 381 down-regulated genes were detected at the MS stage. By comparing the two stages in the same material, there were 8 up-regulated and 9 down-regulated DE genes in JA-CMS line and 29 up-regulated and 9 down-regulated DE genes in JB maintainer line at the MS stage. Quantitative RT-PCR was used to validate 7 randomly selected DE genes. Bioinformatics analysis revealed that genes involved in reduction-oxidation reactions and alpha-linolenic acid metabolism were down-regulated, while genes pertaining to photosynthesis and flavonoid biosynthesis were up-regulated in JA-CMS floral buds compared with their JB counterparts at the SS and/or MS stages. All these four biological processes play important roles in reactive oxygen species (ROS) homeostasis, which may be an important factor contributing to the sterile trait of JA-CMS. Further experiments are warranted to elucidate molecular mechanisms of these genes that lead to CMS.

Transcriptome Sequencing and De Novo Analysis of Cytoplasmic Male Sterility and Maintenance in JA-CMS Cotton

PubMed Central

Yang, Peng; Han, Jinfeng; Huang, Jinling

2014-01-01

Cytoplasmic male sterility (CMS) is the failure to produce functional pollen, which is inherited maternally. And it is known that anther development is modulated through complicated interactions between nuclear and mitochondrial genes in sporophytic and gametophytic tissues. However, an unbiased transcriptome sequencing analysis of CMS in cotton is currently lacking in the literature. This study compared differentially expressed (DE) genes of floral buds at the sporogenous cells stage (SS) and microsporocyte stage (MS) (the two most important stages for pollen abortion in JA-CMS) between JA-CMS and its fertile maintainer line JB cotton plants, using the Illumina HiSeq 2000 sequencing platform. A total of 709 (1.8%) DE genes including 293 up-regulated and 416 down-regulated genes were identified in JA-CMS line comparing with its maintainer line at the SS stage, and 644 (1.6%) DE genes with 263 up-regulated and 381 down-regulated genes were detected at the MS stage. By comparing the two stages in the same material, there were 8 up-regulated and 9 down-regulated DE genes in JA-CMS line and 29 up-regulated and 9 down-regulated DE genes in JB maintainer line at the MS stage. Quantitative RT-PCR was used to validate 7 randomly selected DE genes. Bioinformatics analysis revealed that genes involved in reduction-oxidation reactions and alpha-linolenic acid metabolism were down-regulated, while genes pertaining to photosynthesis and flavonoid biosynthesis were up-regulated in JA-CMS floral buds compared with their JB counterparts at the SS and/or MS stages. All these four biological processes play important roles in reactive oxygen species (ROS) homeostasis, which may be an important factor contributing to the sterile trait of JA-CMS. Further experiments are warranted to elucidate molecular mechanisms of these genes that lead to CMS. PMID:25372034

Status of LWIR HgCdTe infrared detector technology

NASA Technical Reports Server (NTRS)

Reine, M. B.

1990-01-01

The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane arrays place on the HgCdTe photovoltaic detector array are summarized. The theoretical performance limits for intrinsic LWIR HgCdTe detectors are reviewed as functions of cutoff wavelength and operating temperature. The status of LWIR HgCdTe photovoltaic detectors is reviewed and compared to the focal plane array (FPA) requirements and to the theoretical limits. Emphasis is placed on recent data for two-layer HgCdTe PLE heterojunction photodiodes grown at Loral with cutoff wavelengths ranging between 10 and 19 microns at temperatures of 70 to 80 K. Development trends in LWIR HgCdTe detector technology are outlined, and conclusions are drawn about the ability for photovoltaic HgCdTe detector arrays to satisfy a wide variety of advanced FPA array applications.

High-frequency electromechanical resonators based on thin GaTe

NASA Astrophysics Data System (ADS)

Chitara, Basant; Ya'akobovitz, Assaf

2017-10-01

Gallium telluride (GaTe) is a layered material, which exhibits a direct bandgap (˜1.65 eV) regardless of its thickness and therefore holds great potential for integration as a core element in stretchable optomechanical and optoelectronic devices. Here, we characterize and demonstrate the elastic properties and electromechanical resonators of suspended thin GaTe nanodrums. We used atomic force microscopy to extract the Young’s modulus of GaTe (average value ˜39 GPa) and to predict the resonance frequencies of suspended GaTe nanodrums of various geometries. Electromechanical resonators fabricated from suspended GaTe revealed fundamental resonance frequencies in the range of 10-25 MHz, which closely match predicted values. Therefore, this study paves the way for creating a new generation of GaTe based nanoelectromechanical devices with a direct bandgap vibrating element, which can serve as optomechanical sensors and actuators.

Photorefractivity in a Titanium Doped ZnCdTe Crystal

NASA Technical Reports Server (NTRS)

Davis, M.; Collins, L.; Dyer, K.; Tong, J.; Ueda, A.; Chen, H.; Chen, K.-T.; Burger, A.; Pan, Z.; Morgan, S. H.

1997-01-01

Single crystals of Zn(.04)Cd(.96)Te was grown by horizontal physical vapor transport (PVT) method and doped by annealing with TiTe2 powder at 600 C for six days. Photorefractive two-beam coupling, along with photoluminescence and absorption spectroscopy, were used to characterize the ZnCdTe:Ti crystal. At 1.32 micrometers, the photorefractive gain has been measured as a function of the grating period. A gain of about 0.16/cm was obtained at an intensity of about 0.1 W/sq cm. The results of this titanium doped ZnCdTe crystal are compared to that of vanadium-doped CdTe crystals reported previously.

Partial Activation of SA- and JA-Defensive Pathways in Strawberry upon Colletotrichum acutatum Interaction.

PubMed

Amil-Ruiz, Francisco; Garrido-Gala, José; Gadea, José; Blanco-Portales, Rosario; Muñoz-Mérida, Antonio; Trelles, Oswaldo; de Los Santos, Berta; Arroyo, Francisco T; Aguado-Puig, Ana; Romero, Fernando; Mercado, José-Ángel; Pliego-Alfaro, Fernando; Muñoz-Blanco, Juan; Caballero, José L

2016-01-01

Understanding the nature of pathogen host interaction may help improve strawberry (Fragaria × ananassa) cultivars. Plant resistance to pathogenic agents usually operates through a complex network of defense mechanisms mediated by a diverse array of signaling molecules. In strawberry, resistance to a variety of pathogens has been reported to be mostly polygenic and quantitatively inherited, making it difficult to associate molecular markers with disease resistance genes. Colletotrichum acutatum spp. is a major strawberry pathogen, and completely resistant cultivars have not been reported. Moreover, strawberry defense network components and mechanisms remain largely unknown and poorly understood. Assessment of the strawberry response to C. acutatum included a global transcript analysis, and acidic hormones SA and JA measurements were analyzed after challenge with the pathogen. Induction of transcripts corresponding to the SA and JA signaling pathways and key genes controlling major steps within these defense pathways was detected. Accordingly, SA and JA accumulated in strawberry after infection. Contrastingly, induction of several important SA, JA, and oxidative stress-responsive defense genes, including FaPR1-1, FaLOX2, FaJAR1, FaPDF1, and FaGST1, was not detected, which suggests that specific branches in these defense pathways (those leading to FaPR1-2, FaPR2-1, FaPR2-2, FaAOS, FaPR5, and FaPR10) were activated. Our results reveal that specific aspects in SA and JA dependent signaling pathways are activated in strawberry upon interaction with C. acutatum. Certain described defense-associated transcripts related to these two known signaling pathways do not increase in abundance following infection. This finding suggests new insight into a specific putative molecular strategy for defense against this pathogen.

Partial Activation of SA- and JA-Defensive Pathways in Strawberry upon Colletotrichum acutatum Interaction

PubMed Central

Amil-Ruiz, Francisco; Garrido-Gala, José; Gadea, José; Blanco-Portales, Rosario; Muñoz-Mérida, Antonio; Trelles, Oswaldo; de los Santos, Berta; Arroyo, Francisco T.; Aguado-Puig, Ana; Romero, Fernando; Mercado, José-Ángel; Pliego-Alfaro, Fernando; Muñoz-Blanco, Juan; Caballero, José L.

2016-01-01

Understanding the nature of pathogen host interaction may help improve strawberry (Fragaria × ananassa) cultivars. Plant resistance to pathogenic agents usually operates through a complex network of defense mechanisms mediated by a diverse array of signaling molecules. In strawberry, resistance to a variety of pathogens has been reported to be mostly polygenic and quantitatively inherited, making it difficult to associate molecular markers with disease resistance genes. Colletotrichum acutatum spp. is a major strawberry pathogen, and completely resistant cultivars have not been reported. Moreover, strawberry defense network components and mechanisms remain largely unknown and poorly understood. Assessment of the strawberry response to C. acutatum included a global transcript analysis, and acidic hormones SA and JA measurements were analyzed after challenge with the pathogen. Induction of transcripts corresponding to the SA and JA signaling pathways and key genes controlling major steps within these defense pathways was detected. Accordingly, SA and JA accumulated in strawberry after infection. Contrastingly, induction of several important SA, JA, and oxidative stress-responsive defense genes, including FaPR1-1, FaLOX2, FaJAR1, FaPDF1, and FaGST1, was not detected, which suggests that specific branches in these defense pathways (those leading to FaPR1-2, FaPR2-1, FaPR2-2, FaAOS, FaPR5, and FaPR10) were activated. Our results reveal that specific aspects in SA and JA dependent signaling pathways are activated in strawberry upon interaction with C. acutatum. Certain described defense-associated transcripts related to these two known signaling pathways do not increase in abundance following infection. This finding suggests new insight into a specific putative molecular strategy for defense against this pathogen. PMID:27471515

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

NASA Astrophysics Data System (ADS)

Mynbaev, K. D.; Bazhenov, N. L.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Marin, D. V.; Yakushev, M. V.

2018-05-01

Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature photoluminescence (PL) measurements. A substantial difference in defect structure between films grown on GaAs (013) and Si (013) substrates was revealed. HgCdTe/GaAs films were mostly free of defect-related energy levels within the bandgap, which was confirmed by PL and carrier lifetime measurements. By contrast, the properties of HgCdTe/Si films are affected by uncontrolled point defects. These could not be always associated with typical "intrinsic" HgCdTe defects, such as mercury vacancies, so consideration of other defects, possibly inherent in HgCdTe/Si structures, was required. The post-growth annealing was found to have a positive effect on the defect structure by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgCdTe/Si.

High fidelity polycrystalline CdTe/CdS heterostructures via molecular dynamics

DOE PAGES

Aguirre, Rodolfo; Chavez, Jose Juan; Zhou, Xiaowang; ...

2017-06-20

Molecular dynamics simulations of polycrystalline growth of CdTe/CdS heterostructures have been performed. First, CdS was deposited on an amorphous CdS substrate, forming a polycrystalline film. Subsequently, CdTe was deposited on top of the polycrystalline CdS film. Cross-sectional images show grain formation at early stages of the CdS growth. During CdTe deposition, the CdS structure remains almost unchanged. Concurrently, CdTe grain boundary motion was detected after the first 24.4 nanoseconds of CdTe deposition. With the elapse of time, this grain boundary pins along the CdS/CdTe interface, leaving only a small region of epitaxial growth. CdTe grains are larger than CdS grainsmore » in agreement with experimental observations in the literature. Crystal phase analysis shows that zinc blende structure dominates over the wurtzite structure inside both CdS and CdTe grains. Composition analysis shows Te and S diffusion to the CdS and CdTe films, respectively. Lastly, these simulated results may stimulate new ideas for studying and improving CdTe solar cell efficiency.« less

Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 3, May 1-July 31, 1981

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bube, R.H.

1981-01-01

Preparation of the hot-wall vacuum deposition system nears completion and the first trial evaporation should take place in mid October. A UTI 100C Mass Analyzer with a 1 to 300 AMU capability has been ordered for the system. Preliminary tests indicate good temperature tracking between the furnace core and the CdTe source itself. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates in October 1980 show no significant change in dark or light properties after open-circuit storage for the next 9 months. CdTe single crystal boules have been grown with P, As and Cs impurity. For P impuritymore » it appears from our data that the segregation coefficient is close to unity, that the value of hole density is controlled by the P and not by some unknown background acceptor, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.« less

MAPK-dependent JA and SA signalling in Nicotiana attenuata affects plant growth and fitness during competition with conspecifics

PubMed Central

2012-01-01

Background Induced defense responses to herbivores are generally believed to have evolved as cost-saving strategies that defer the fitness costs of defense metabolism until these defenses are needed. The fitness costs of jasmonate (JA)-mediated defenses have been well documented. Those of the early signaling units mediating induced resistance to herbivores have yet to be examined. Early signaling components that mediate herbivore-induced defense responses in Nicotiana attenuata, have been well characterized and here we examine their growth and fitness costs during competition with conspecifics. Two mitogen-activated protein kinases (MAPKs), salicylic acid (SA)-induced protein kinase (SIPK) and wound-induced protein kinase (WIPK) are rapidly activated after perception of herbivory and both kinases regulate herbivory-induced JA levels and JA-mediated defense metabolite accumulations. Since JA-induced defenses result in resource-based trade-offs that compromise plant productivity, we evaluated if silencing SIPK (irSIPK) and WIPK (irWIPK) benefits the growth and fitness of plants competiting with wild type (WT) plants, as has been shown for plants silenced in JA-signaling by the reduction of Lipoxygenase 3 (LOX3) levels. Results As expected, irWIPK and LOX3-silenced plants out-performed their competing WT plants. Surprisingly, irSIPK plants, which have the largest reductions in JA signaling, did not. Phytohormone profiling of leaves revealed that irSIPK plants accumulated higher levels of SA compared to WT. To test the hypothesis that these high levels of SA, and their presumed associated fitness costs of pathogen associated defenses in irSIPK plants had nullified the JA-deficiency-mediated growth benefits in these plants, we genetically reduced SA levels in irSIPK plants. Reducing SA levels partially recovered the biomass and fitness deficits of irSIPK plants. We also evaluated whether the increased fitness of plants with reduced SA or JA levels resulted from

The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Li Bin; Ye, Lingyun; Wang, Yuan Xu, E-mail: wangyx@henu.edu.cn

2015-12-21

The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys),more » which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.« less

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

NASA Astrophysics Data System (ADS)

Noel, P.; Thomas, C.; Fu, Y.; Vila, L.; Haas, B.; Jouneau, P.-H.; Gambarelli, S.; Meunier, T.; Ballet, P.; Attané, J. P.

2018-04-01

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 ±0.5 nm . The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

Milagro Observations of Potential TeV Emitters

NASA Astrophysics Data System (ADS)

Abeysekara, Anushka; Linnemann, James

2012-03-01

We searched for point sources in Milagro sky maps at the locations in four catalogs of potential TeV emitting sources. Our candidates are selected from the Fermi 2FGL pulsars, Fermi 2FGL extragalactic sources, TeVCat extragalactic sources, and from the BL Lac TeV Candidate list published by Costamante and Ghisellini in 2002. The False Discovery Rate (FDR) statistical procedure is used to select the sources. The FDR procedure controls the fraction of false detections. Our results are presented in this talk.

Two bHLH-type transcription factors, JA-ASSOCIATED MYC2-LIKE2 and JAM3, are transcriptional repressors and affect male fertility

PubMed Central

Nakata, Masaru; Ohme-Takagi, Masaru

2013-01-01

The jasmonate (JA) plant hormones regulate responses to biotic and abiotic stress and aspects of plant development, including male fertility in Arabidopsis thaliana. The bHLH-type transcription factor JA-ASSOCIATED MYC2-LIKE1 (JAM1) negatively regulates JA signaling and gain-of-function JAM1 transgenic plants have impaired JA-mediated male fertility. Here we report that JAM2 and JAM3, 2 bHLHs closely related to JAM1, also act as transcriptional repressors. Moreover, overexpression of JAM2 and JAM3 also results in reduced male fertility. These results suggest that JAM1, JAM2, and JAM3 act redundantly as negative regulators of JA-mediated male fertility. PMID:24056034

First-principles study of ternary Li-Al-Te compounds under high pressure

NASA Astrophysics Data System (ADS)

Wang, Youchun; Tian, Fubo; Li, Da; Duan, Defang; Xie, Hui; Liu, Bingbing; Zhou, Qiang; Cui, Tian

2018-02-01

The ternary Li-Al-Te compounds were investigated by the first-principle evolutionary calculation based on density function theory. Apart from the known structure, I-42d LiAlTe2 and P3m1 LiAlTe2, several new structures were discovered, P-3m1 LiAlTe2, Pnma LiAlTe2, C2/c Li9AlTe2, Immm Li9AlTe2 and P4/mmm Li6AlTe. We determined that the I-42d LiAlTe2 firstly changed to P-3m1 phase at 6 GPa, and then into the Pnma structure at 65 GPa, Pnma phase was stable up at least to 120 GPa. I-42d LiAlTe2 was a pseudo-direct band gap semiconductor, but P-3m1 LiAlT2 was an indirect band gap semiconductor. This may be caused by the pressure effect. Subsequently, it was metallized under pressure. Pnma LiAlTe2 was also metallic at the pressure we studied. C2/c Li9AlTe2 was stable above 4 GPa, then turned into Immm phase at 60 GPa. C2/c Li9AlTe2 was an indirect band gap semiconductor. The results show that P4/mmm Li6AlTe was stable and metallized in the pressure range of 0.7-120 GPa. The calculations of DOS and PDOS indicate that the arrangement of electrons near Fermi energy can be affected by the increase of Li. The calculated ELF results and Bader charge analysis indicate that there was no covalent bond between Al and Te atoms for high-pressure Pnma LiAlTe2, Li9AlTe2 and Li6AlTe. For Li9AlTe2 and Li6AlTe, different from LiAlTe2, Al atoms not connect with Te atoms, but link with Li atoms. The results were further proved by Mulliken population analysis. And the weak covalent bonds between Li and Al atoms stem from the hybridization of Li s and Al p presented in PDOS diagrams. We further deduced that the pressure effect and the increase of Li content may result in the disappearance of Al-Te bonds for Li-Al-Te compound under extreme pressure.

The look of LaTeX

NASA Astrophysics Data System (ADS)

This has always been the major objection to its use by those not driven by the need to typeset mathematics since the “what-you-see-is-what-you-get” (WYSIWYG) packages offered by Microsoft Word and WordPerfect are easy to learn and use. Recently, however, com-mercial software companies have begun to market almost-WYSIWYG programs that create LaTeX files. Some commercial software that creates LaTeX files are listed in Table 1. EXP and SWP have some of the “look and feel” of the software that is popular in offices and PCTeX32 allows quick and convenient previews of the translated LaTeX files.

Design and investigation of potential Sn-Te-P and Zr-Te-P class of Dirac materials

NASA Astrophysics Data System (ADS)

Sarswat, Prashant; Sarkar, Sayan; Free, Michael

A motivation of new Dirac materials design and synthesis by perturbing the symmetry, was explored by substitution of a Sn vacancy by P that maintains the intrinsic band inversion at the L point but also the direct bandgap shrinkage upon the incorporation of spin-orbit coupling. In a similar line of investigation, Zr-Te-P was also systematically studied. The synthesis of both Sn-Te-P and Zr-Te-P system of compounds resulted in the formation of long needles type crystals and the bulk porous deposits. The exotic morphology of the P-doped SnTe needles possesses the pierced surface throughout its extension. First principle based calculations were also carried out for these sets of compounds using General Gradient Approximation (GGA) with Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional. In order to ensure structural optimization, a limited memory Broyden-Fletcher-Goldfarb-Shanno (LBFGS) algorithm was employed and the total energy in PBE exchange-correlation functional was considered for the calculation of the formation energy per atom. The new modifications have a potential to establish the new class of Dirac materials ushering upon new frontiers of interest.

Milagro Observations of Potential TeV Emitters

NASA Technical Reports Server (NTRS)

Abdo, A. A.; Abeysekara, A. U.; Allen, B. T.; Aune, T.; Barber, A. S.; Berley, D.; Braun, J.; Chen, C.; Christopher, G. E.; DeYoung, T.;

Ternary eutectic growth of nanostructured thermoelectric Ag-Pb-Te materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hsin-jay; Chen, Sinn-wen; Foo, Wei-jian

2012-07-09

Nanostructured Ag-Pb-Te thermoelectric materials were fabricated by unidirectionally solidifying the ternary Ag-Pb-Te eutectic and near-eutectic alloys using the Bridgeman method. Specially, the Bridgman-grown eutectic alloy exhibited a partially aligned lamellar microstructure, which consisted of Ag{sub 5}Te{sub 3} and Te phases, with additional 200-600 nm size particles of PbTe. The self-assembled interfaces altered the thermal and electronic transport properties in the bulk Ag-Pb-Te eutectic alloy. Presumably due to phonon scattering from the nanoscale microstructure, a low thermal conductivity ({kappa} = 0.3 W/mK) was achieved of the eutectic alloy, leading to a zT peak of 0.41 at 400 K.

Physiological Characteristics and Production of Folic Acid of Lactobacillus plantarum JA71 Isolated from Jeotgal, a Traditional Korean Fermented Seafood

PubMed Central

Lim, Sang-Dong

2014-01-01

Folic acid, one of the B group of vitamins, is an essential substance for maintaining the functions of the nervous system, and is also known to decrease the level of homocysteine in plasma. Homocysteine influences the lowering of the cognitive function in humans, and especially in elderly people. In order to determine the strains with a strong capacity to produce folic acid, 190 bacteria were isolated from various kinds of jeotgal and chungkuk-jang. In our test experiment, JA71 was found to contain 9.03μg/mL of folic acid after 24 h of incubation in an MRS broth. This showed that JA71 has the highest folic acid production ability compared to the other lactic acid bacteria that were isolated. JA71 was identified as Lactobacillus plantarum by the result of API carbohydrate fermentation pattern and 16s rDNA sequence. JA71 was investigated for its physiological characteristics. The optimum growth temperature of JA71 was 37℃, and the cultures took 12 h to reach pH 4.4. JA71 proved more sensitive to bacitracin when compared with fifteen different antibiotics, and showed most resistance to neomycin and vancomycin. Moreover, it was comparatively tolerant of bile juice and acid, and displayed resistance to Escherichia coli, Salmonella Typhimurium, and Staphylococcus aureus with restraint rates of 60.4%, 96.7%, and 76.2%, respectively. These results demonstrate that JA71 could be an excellent strain for application to functional products. PMID:26760752

Magnetic behavior of Fe(Se,Te) systems: First-principles calculations

NASA Astrophysics Data System (ADS)

Shi, Hongliang; Huang, Zhong-Bing; Tse, John S.; Lin, Hai-Qing

2011-08-01

The magnetic behaviors in Fe(Se,Te) systems have been investigated systematically using density functional calculations. At the experimental lattice parameters, the ground state is found to be in the double stripe magnetic phase for FeTe but in the single stripe magnetic phase for FeSe and FeSe0.5Te0.5, and there is no preference in the different easy axes of magnetization. Substitution of Se by Te enlarges the size of the Fermi surface in FeSe0.5Te0.5, resulting in a stronger nesting effect and thus enhancing the superconductivity. It is found that the double stripe order in FeTe1-xSex changes to the single stripe order when x > 0.18. Spiral calculations on FeSe0.5Te0.5 show that the lowest energy is at the commensurate point Q→= (0.5,0.5), accompanied by additional local minima at two incommensurate points near Q→= (0.5,0.5). This observation is consistent with the experimentally observed positions of low energy magnetic excitations. Geometry optimization calculations show that the tetragonal cell relaxes to orthorhombic and monoclinic cells for FeSe and FeTe, respectively, but remains unchanged for FeSe0.5Te0.5.

On atomic mechanisms governing the oxidation of Bi2Te3.

PubMed

Music, Denis; Chang, Keke; Schmidt, Paul; Braun, Felix N; Heller, Martin; Hermsen, Steffen; Pöllmann, Peter J; Schulzendorff, Till; Wagner, Cedric

2017-11-09

Oxidation of Bi 2 Te 3 (space group R [Formula: see text] m) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi 2 Te 3 is at equilibrium with Bi 2 O 3 and TeO 2 , whereby the most stable compound is Bi 2 Te 3 , followed by Bi 2 O 3 . The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi 2 Te 3 (0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi 2 Te 3 thermoelectric devices.

On atomic mechanisms governing the oxidation of Bi2Te3

NASA Astrophysics Data System (ADS)

Music, Denis; Chang, Keke; Schmidt, Paul; Braun, Felix N.; Heller, Martin; Hermsen, Steffen; Pöllmann, Peter J.; Schulzendorff, Till; Wagner, Cedric

2017-12-01

Oxidation of Bi2Te3 (space group R \\overline{3} m) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi2Te3 is at equilibrium with Bi2O3 and TeO2, whereby the most stable compound is Bi2Te3, followed by Bi2O3. The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi2Te3(0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi2Te3 thermoelectric devices.

Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures

NASA Astrophysics Data System (ADS)

Kuiri, Manabendra; Chakraborty, Biswanath; Paul, Arup; Das, Subhadip; Sood, A. K.; Das, Anindya

2016-02-01

MoTe2 with a narrow band-gap of ˜1.1 eV is a promising candidate for optoelectronic applications, especially for the near-infrared photo detection. However, the photo responsivity of few layers MoTe2 is very small (<1 mA W-1). In this work, we show that a few layer MoTe2-graphene vertical heterostructures have a much larger photo responsivity of ˜20 mA W-1. The trans-conductance measurements with back gate voltage show on-off ratio of the vertical transistor to be ˜(0.5-1) × 105. The rectification nature of the source-drain current with the back gate voltage reveals the presence of a stronger Schottky barrier at the MoTe2-metal contact as compared to the MoTe2-graphene interface. In order to quantify the barrier height, it is essential to measure the work function of a few layers MoTe2, not known so far. We demonstrate a method to determine the work function by measuring the photo-response of the vertical transistor as a function of the Schottky barrier height at the MoTe2-graphene interface tuned by electrolytic top gating.

Application of a JA-Ile Biosynthesis Inhibitor to Methyl Jasmonate-Treated Strawberry Fruit Induces Upregulation of Specific MBW Complex-Related Genes and Accumulation of Proanthocyanidins.

PubMed

Delgado, Laura D; Zúñiga, Paz E; Figueroa, Nicolás E; Pastene, Edgar; Escobar-Sepúlveda, Hugo F; Figueroa, Pablo M; Garrido-Bigotes, Adrián; Figueroa, Carlos R

2018-06-13

Fleshy fruits are an important source of anthocyanins and proanthocyanidins (PAs), which protect plants against stress, and their consumption provides beneficial effects for human health. In strawberry fruit, the application of exogenous methyl jasmonate (MeJA) upregulates anthocyanin accumulation, although the relationship between the jasmonate pathway and anthocyanin and PA biosynthesis in fruits remains to be understood. Anthocyanin and PA accumulation is mainly regulated at the transcriptional level through R2R3-MYB and bHLH transcription factors in different plant species and organs. Here, the effect of jarin-1, a specific inhibitor of bioactive JA (jasmonoyl-isoleucine, JA-Ile) biosynthesis, on anthocyanin and PA accumulation was evaluated during strawberry ( Fragaria × ananassa ) fruit development using an in vitro ripening system for 48 h. Also, we observed the effects of MeJA and the application of jarin-1 to MeJA-treated fruits (MeJA + jarin-1 treatment). We assessed changes of expression levels for the JA-Ile and MeJA biosynthetic ( FaJAR1.2 and FaJMT ), JA signaling-related ( FaMYC2 and FaJAZ1 ), MYB-bHLH-WD40 (MBW) complex-related ( FabHLH3/33 , FaMYB9/10/11 , and repressor FaMYB1 ), and anthocyanin and PA biosynthetic (FaANS , FaUFGT , FaANR , and FaLAR ) genes. In addition, the promoter region of MBW complex-related MYB genes was isolated and sequenced. We found a higher redness of strawberry fruit skin and anthocyanin content in MeJA-treated fruits with respect to jarin-1-treated ones concomitant with an upregulation of FaANS and FaUFGT genes. Inversely, the PA content was higher in jarin-1- and MeJA + jarin-1-treated than in MeJA-treated fruits. MeJA + jarin-1 treatment resulted in an upregulation of FaANR and associated transcription factors such as FabHLH33 and FaMYB9/11 along with FaJMT and FaJAR1.2 . Finally, we found JA-responsive elements in the promoter regions of FaMYB1/9/10/11 genes. It is proposed that PA biosynthesis-related genes

TE-Tracker: systematic identification of transposition events through whole-genome resequencing.

PubMed

Gilly, Arthur; Etcheverry, Mathilde; Madoui, Mohammed-Amin; Guy, Julie; Quadrana, Leandro; Alberti, Adriana; Martin, Antoine; Heitkam, Tony; Engelen, Stefan; Labadie, Karine; Le Pen, Jeremie; Wincker, Patrick; Colot, Vincent; Aury, Jean-Marc

2014-11-19

Transposable elements (TEs) are DNA sequences that are able to move from their location in the genome by cutting or copying themselves to another locus. As such, they are increasingly recognized as impacting all aspects of genome function. With the dramatic reduction in cost of DNA sequencing, it is now possible to resequence whole genomes in order to systematically characterize novel TE mobilization in a particular individual. However, this task is made difficult by the inherently repetitive nature of TE sequences, which in some eukaryotes compose over half of the genome sequence. Currently, only a few software tools dedicated to the detection of TE mobilization using next-generation-sequencing are described in the literature. They often target specific TEs for which annotation is available, and are only able to identify families of closely related TEs, rather than individual elements. We present TE-Tracker, a general and accurate computational method for the de-novo detection of germ line TE mobilization from re-sequenced genomes, as well as the identification of both their source and destination sequences. We compare our method with the two classes of existing software: specialized TE-detection tools and generic structural variant (SV) detection tools. We show that TE-Tracker, while working independently of any prior annotation, bridges the gap between these two approaches in terms of detection power. Indeed, its positive predictive value (PPV) is comparable to that of dedicated TE software while its sensitivity is typical of a generic SV detection tool. TE-Tracker demonstrates the benefit of adopting an annotation-independent, de novo approach for the detection of TE mobilization events. We use TE-Tracker to provide a comprehensive view of transposition events induced by loss of DNA methylation in Arabidopsis. TE-Tracker is freely available at http://www.genoscope.cns.fr/TE-Tracker . We show that TE-Tracker accurately detects both the source and destination of

Cyclotron resonance and interband optical transitions in HgTe/CdTe(0 1 3) quantum well heterostructures

NASA Astrophysics Data System (ADS)

Ikonnikov, A. V.; Zholudev, M. S.; Spirin, K. E.; Lastovkin, A. A.; Maremyanin, K. V.; Aleshkin, V. Ya; Gavrilenko, V. I.; Drachenko, O.; Helm, M.; Wosnitza, J.; Goiran, M.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.; Diakonova, N.; Consejo, C.; Chenaud, B.; Knap, W.

2011-12-01

Cyclotron resonance spectra of 2D electrons in HgTe/CdxHg1-xTe (0 1 3) quantum well (QW) heterostructures with inverted band structure have been thoroughly studied in quasiclassical magnetic fields versus the electron concentration varied using the persistent photoconductivity effect. The cyclotron mass is shown to increase with QW width in contrast to QWs with normal band structure. The measured values of cyclotron mass are shown to be systematically less than those calculated using the 8 × 8 Kane model with conventional set of HgTe and CdTe material parameters. In quantizing pulsed magnetic fields (Landau level filling factor less than unity) up to 45 T, both intraband (CR) and interband magnetoabsorption have been studied at radiation wavelengths 14.8 and 11.4 µm for the first time. The results obtained are compared with the allowed transition energies between Landau levels in the valence and conduction bands calculated within the same model, the calculated energies being again systematically less (by 3-14%) than the observed optical transition energies.

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

NASA Astrophysics Data System (ADS)

Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

2006-06-01

The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

DOEpatents

Skrabek, Emanuel Andrew; Trimmer, Donald Smith

1976-01-01

Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

Magnetospectroscopy of double HgTe/CdHgTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru

2016-11-15

The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption linesmore » as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.« less

Synthesis and structure of A4V6[Te2(4+)Te6+]O24 (A = K, Rb)-two new quaternary mixed-valent tellurium oxides.

PubMed

Zhu, Tianxiang; Qin, Jingui; Halasyamani, P Shiv

2011-09-14

Two new mixed-valent tellurium oxides with vanadium(V), A(4)V(6)[Te(2)(4+)Te(6+)]O(24) (A = K and Rb), have been synthesized by hydrothermal and conventional solid state techniques. Their structures were determined by single-crystal X-ray diffraction analysis. These two iso-structural compounds exhibit layered structural topologies consisting of [V(6)Te(3)O(24)](4-) anionic units. In these anionic structural units, a Te(6+)O(6) octahedron is connected to six VO(4) tetrahedra by corner-sharing to generate a [V(6)TeO(24)] unit, and each of these [V(6)TeO(24)] units are interconnected by sharing two Te(4+)O(3) polyhedra to complete the infinite [V(6)Te(3)O(24)](4-) sheets. Infrared spectroscopy, UV-Visible diffuse reflectance spectroscopy, and thermogravimetric analysis were also performed on these two compounds. Crystal data: K(4)V(6)Te(3)O(24), trigonal, space group R ̅3c (No. 167) with a = b = 9.7075(6) Å, c = 42.701(3) Å, V = 3484.9(4) Å(3), and Z = 6; Rb(4)V(6)Te(3)O(24), trigonal, space group R ̅3c (No. 167) with a = b = 9.8399(9) Å, c = 43.012(4) Å, V = 3606.6(6) Å(3), and Z = 6. This journal is © The Royal Society of Chemistry 2011

Slow Auger Relaxation in HgTe Colloidal Quantum Dots.

PubMed

Melnychuk, Christopher; Guyot-Sionnest, Philippe

2018-05-03

The biexciton lifetimes in HgTe colloidal quantum dots are measured as a function of particle size. Samples produced by two synthetic methods, leading to partially aggregated or well-dispersed particles, exhibit markedly different dynamics. The relaxation characteristics of partially aggregated HgTe inhibit reliable determinations of the Auger lifetime. In well-dispersed HgTe quantum dots, the biexciton lifetime increases approximately linearly with particle volume, confirming trends observed in other systems. The extracted Auger coefficient is three orders of magnitude smaller than that for bulk HgCdTe materials with similar energy gaps. We discuss these findings in the context of understanding Auger relaxation in quantum-confined systems and their relevance to mid-infrared optoelectronic devices based on HgTe colloidal quantum dots.

Activation of an intense near band edge emission from ZnTe/ZnMgTe core/shell nanowires grown on silicon.

PubMed

Wojnar, P; Szymura, M; Zaleszczyk, W; Kłopotowski, L; Janik, E; Wiater, M; Baczewski, L T; Kret, S; Karczewski, G; Kossut, J; Wojtowicz, T

2013-09-13

The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity from ZnTe/ZnMgTe core/shell nanowires grown on Si substrates is reported. A special role of the use of Si substrates instead of GaAs substrates is emphasized, which results in an increase of the near band edge emission intensity by at least one order of magnitude accompanied by a simultaneous reduction of the defect related luminescence. A possible explanation of this effect relies on the presence of Ga-related deep level defects in structures grown on GaAs substrates, which are absent when Si substrates are used. Monochromatic mapping of the cathodoluminescence clearly confirms that the observed emission originates, indeed, from the ZnTe/ZnMgTe core/shell nanowires, whereas individual objects are studied by means of microphotoluminescence.

New physics at the TeV scale

NASA Astrophysics Data System (ADS)

Chakdar, Shreyashi

The Standard Model of particle physics is assumed to be a low-energy effective theory with new physics theoretically motivated to be around TeV scale. The thesis presents theories with new physics beyond the Standard Model in the TeV scale testable in the colliders. Work done in chapters 2, 3 and 5 in this thesis present some models incorporating different approaches of enlarging the Standard Model gauge group to a grand unified symmetry with each model presenting its unique signatures in the colliders. The study on leptoquarks gauge bosons in reference to TopSU(5) model in chapter 2 showed that their discovery mass range extends up to 1.5 TeV at 14 TeV LHC with luminosity of 100 fb--1. On the other hand, in chapter 3 we studied the collider phenomenology of TeV scale mirror fermions in Left-Right Mirror model finding that the reaches for the mirror quarks goes upto 750 GeV at the 14 TeV LHC with 300 fb--1 luminosity. In chapter 4 we have enlarged the bosonic symmetry to fermi-bose symmetry e.g. supersymmetry and have shown that SUSY with non-universalities in gaugino or scalar masses within high scale SUGRA set up can still be accessible at LHC with 14 TeV. In chapter 5, we performed a study in respect to the e+e-- collider and find that precise measurements of the higgs boson mass splittings up to ˜ 100 MeV may be possible with high luminosity in the International Linear Collider (ILC). In chapter 6 we have shown that the experimental data on neutrino masses and mixings are consistent with the proposed 4/5 parameter Dirac neutrino models yielding a solution for the neutrino masses with inverted mass hierarchy and large CP violating phase delta and thus can be tested experimentally. Chapter 7 of the thesis incorporates a warm dark matter candidate in context of two Higgs doublet model. The model has several testable consequences at colliders with the charged scalar and pseudoscalar being in few hundred GeV mass range. This thesis presents an endeavor to study

New μ-SnTe{sub 4} and μ-Sn{sub 2}Te{sub 6} ligands to transition metal: Solvothermal syntheses and characterizations of zinc tellurostannates containing polyamine ligands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Jialin; Wang, Fang; Shen, Yali

2014-08-15

Zinc tellurostannates [(Zn(teta)){sub 2}(μ-1κ:2κ-SnTe{sub 4})] (1), [(Zn(teta)){sub 3}(μ{sub 3}-1κ:2κ:3κ-SnTe{sub 4})]I{sub 2} (2), [(Zn(tren)){sub 2}(μ-1κ:2κ-Sn{sub 2}Te{sub 6})] (3), and [Zn(dien){sub 2}]{sub 4}(Sn{sub 2}Te{sub 6}){sub 1.75}(Sn{sub 2}Te{sub 8}){sub 0.25}·dien (4) were prepared by the reactions of Zn, Sn, and Te with iodine ion assistant in teta and dien. The tetrahedral [SnTe{sub 4}]{sup 4−} anion coordinates to two [Zn(teta)]{sup 2+} units as a bidentate μ-1κ:2κ-SnTe{sub 4} ligand to form the neutral complex 1. It coordinates to three [Zn(teta)]{sup 2+} units with a tridentate μ{sub 3}-1κ:2κ:3κ coordination modes, generating a complex cation [(Zn(teta)){sub 3}(μ{sub 3}-1κ:2κ:3κ- SnTe{sub 4})]{sup 2+} in 2. In 3, the [Sn{submore » 2}Te{sub 6}]{sup 4−} anion joins two [Zn(tren)]{sup 2+}cations with the trans terminal Te atoms, forming neutral complex 3. The μ-1κ:2κ-SnTe{sub 4}, μ{sub 3}-1κ:2κ:3κ-SnTe{sub 4}, and μ-1κ:2κ-Sn{sub 2}Te{sub 6} ligands to TM centers in 1–3 have not been observed before. Compound 4 contains a normal [Sn{sub 2}Te{sub 6}]{sup 4−} and an abnormal [(Sn{sub 2}Te{sub 6}){sub 0.75}(Sn{sub 2}Te{sub 8}){sub 0.25}]{sup 4−} anions. Compounds 1–4 exhibit narrow band gaps in the range of 1.47–1.98 eV, and a distinct red-shift of the band gaps is observed from 4 to 1−3. - Graphical abstract: Zinc tellurostannates were prepared with iodine ion assistant in polyamines, and first μ-1κ:2κ-SnTe{sub 4}, μ{sub 3}-1κ:2κ:3κ-SnTe{sub 4}, and μ-1κ:2κ-Sn{sub 2}Te{sub 6} ligands TM centers were obtained. - Highlights: • Zinc-tellurostannates were first prepared with iodine ion assistant. • Novel μ-1κ:2κ-SnTe{sub 4}, μ{sub 3}-1κ:2κ:3κ-SnTe{sub 4}, and μ-1κ:2κ-Sn{sub 2}Te{sub 6} ligands were obtained. • The Zinc tellurostannates exhibit optical bandgaps between 1.47 and 1.98 eV.« less

Hierarchical Bi2Te3 Nanostrings: Green Synthesis and Their Thermoelectric Properties.

PubMed

Song, Shuyan; Liu, Yu; Wang, Qishun; Pan, Jing; Sun, Yabin; Zhang, Lingling

2018-05-20

Bi2Te3 hierarchical nanostrings have been synthesized through a solvothermal approach with the assistance of sucrose. The hierarchical Bi2Te3 was supposed to be fabricated through a self-assembly process. Te nanorods first emerge with the reduction of TeO32- followed by heterogeneous nucleation of Bi2Te3 nanoplates on the surface and tips of Te nanorods. Te nanorods further transform into Bi2Te3 nanorods simultaneously with the nanoplates' growth leading to a hierarchical structure. Through controlling the reaction kinetics by adding different amount of ethylene glycol, the length of nanorods and the number of nanoplates could be tailored. The use of sucrose is vital to the formation of hierarchical structure because it not only serves as a template for the well-defined growth of Te nanorods but also promotes the heterogeneous nucleation of Bi2Te3 in the self-assembly process. The Bi2Te3 nanomaterial shows a moderate thermoelectric performance because of its hierarchical structure. This study shows a promising way to synthesize Bi2Te3-based nanostructures through environmental friendly approach. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe, and ZnSe(1-x)Te(x)(0 less than x less than 0.4) grown by physical vapor transport. Energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. A best fit curve to the band gap versus composition x data gives a bowing parameter of 1.45. This number lies between the value of 1.23 determined previously on ZnSeTe bulk crystals and the value of 1.621 reported on ZnSeTe epilayers. Low-temperature photoluminescence (PL) spectra were measured on six samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe(1-x)Te(x) samples, 0.09 less than x less than 0.39. For x=0.09, this emission energy is about 0.2 eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x=0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples.

APT mass spectrometry and SEM data for CdTe solar cells

DOE PAGES

Li, Chen; Paudel, Naba R.; Yan, Yanfa; ...

2016-03-16

Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl 2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl 2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solarmore » cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

NASA Astrophysics Data System (ADS)

Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

2018-01-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

2017-06-01

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

Ba 3 (Cr 0.97(1) Te 0.03(1) ) 2 TeO 9 : in Search of Jahn–Teller Distorted Cr(II) Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Man-Rong; Deng, Zheng; Lapidus, Saul H.

2016-10-17

A novel 6H - type hexagonal perovskite Ba 3 (Cr 0.97(1) Te 0.03 (1 ) ) 2 TeO 9 was prepared at high pressure (6 GPa) and temperature ( 1 773 K). Both transmission electron microscopy and synchrotron powder x - ray diffraction data demonstrate that Ba 3 (Cr 0.97(1) Te 0.03(1) ) 2 TeO 9 crystallize s in P6 3 / mmc with face - shared (Cr 0.97(1) Te 0.03(1) )O 6 octahedral pairs interconnected with TeO 6 octahedra via corner - sharing. Structure analysis shows a mixed Cr 2+ /Cr 3+ valence state with ~ 10% Cr 2+more » . The existence of Cr 2+ in Ba 3 (Cr 2+ 0.10(1) Cr 3+ 0.87(1) Te 6+ 0.03 ) 2 TeO 9 is further evidenced by x - ray absorption near edge spectr oscopy . Magnetic properties measurements show a paramagnetic response down to 4 K and a small glassy - state curvature at low temperature. In this work, the o ctahedral Cr 2+ O 6 component is stabilized in an oxide material for the first time ; the expected Jahn - Teller distortion of high - spin ( d 4 ) Cr 2+ is not found , which is attributed to the small proportion of Cr 2+ (~ 10%) and the face - sharing arrangement of CrO 6 octahedral pairs, that structu rally dis favor axial distortion.« less

DFT-derived reactive potentials for the simulation of activated processes: the case of CdTe and CdTe:S.

PubMed

Hu, Xiao Liang; Ciaglia, Riccardo; Pietrucci, Fabio; Gallet, Grégoire A; Andreoni, Wanda

2014-06-19

We introduce a new ab initio derived reactive potential for the simulation of CdTe within density functional theory (DFT) and apply it to calculate both static and dynamical properties of a number of systems (bulk solid, defective structures, liquid, surfaces) at finite temperature. In particular, we also consider cases with low sulfur concentration (CdTe:S). The analysis of DFT and classical molecular dynamics (MD) simulations performed with the same protocol leads to stringent performance tests and to a detailed comparison of the two schemes. Metadynamics techniques are used to empower both Car-Parrinello and classical molecular dynamics for the simulation of activated processes. For the latter, we consider surface reconstruction and sulfur diffusion in the bulk. The same procedures are applied using previously proposed force fields for CdTe and CdTeS materials, thus allowing for a detailed comparison of the various schemes.

JA, a new type of polyunsaturated fatty acid isolated from Juglans mandshurica Maxim, limits the survival and induces apoptosis of heptocarcinoma cells.

PubMed

Gao, Xiu-Li; Lin, Hua; Zhao, Wei; Hou, Ya-Qin; Bao, Yong-Li; Song, Zhen-Bo; Sun, Lu-Guo; Tian, Shang-Yi; Liu, Biao; Li, Yu-Xin

2016-03-01

Juglans mandshurica Maxim (Juglandaceae) is a famous folk medicine for cancer treatment and some natural compounds isolated from it have been studied extensively. Previously we isolated a type of ω-9 polyunsaturated fatty acid (JA) from the bark of J. mandshurica, however little is known about its activity and the underlying mechanisms. In this study, we studied anti-tumor activity of JA on several human cancer cell lines. Results showed that JA is cytotoxic to HepG2, MDA-MB-231, SGC-7901, A549 and Huh7 cells at a concentration exerting minimal toxic effects on L02 cells. The selective toxicity of JA was better than other classical anti-cancer drugs. Further investigation indicated that JA could induce cell apoptosis, characterized by chromatin condensation, DNA fragmentation and activation of the apoptosis-associated proteins such as Caspase-3 and PARP-1. Moreover, we investigated the cellular apoptosis pathway involved in the apoptosis process in HepG2 cells. We found that proteins involved in mitochondrion (cleaved-Caspase-9, Apaf-1, HtrA2/Omi, Bax, and Mitochondrial Bax) and endocytoplasmic reticulum (XBP-1s, GRP78, cleaved-Caspase-7 and cleaved-Caspase-12) apoptotic pathways were up-regulated when cells were treated by JA. In addition, a morphological change in the mitochondrion was detected. Furthermore, we found that JA could inhibit DNA synthesis and induce G2/M cell cycle arrest. The expression of G2-to-M transition related proteins, such as CyclinB1 and phosphorylated-CDK1, were reduced. In contrast, the G2-to-M inhibitor p21 was increased in JA-treated cells. Overall, our results suggest that JA can induce mitochondrion- and endocytoplasmic reticulum-mediated apoptosis, and G2/M phase arrest in HepG2 cells, making it a promising therapeutic agent against hepatoma.

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong Haibo; School of Materials Science and Engineering, University of Jinan, Jinan 250022; Hao Xiaopeng, E-mail: xphao@sdu.edu.cn

2011-12-15

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore,more » the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.« less

Exchange interactions in CdMnTe/CdMgTe quantum wells under high magnetic fields

NASA Astrophysics Data System (ADS)

Yasuhira, T.; Uchida, K.; Matsuda, Y. H.; Miura, N.; Kuroda, S.; Takita, K.

2002-03-01

The sp-d exchange interaction Jsp-d and the exchange interaction between the nearest neighbor Mn ions JNN were studied by magneto-photoluminescence spectra of excitons in CdMnTe/CdMgTe quantum wells in pulsed high magnetic fields up to 45 T. The magnitude of Jsp-d estimated from the observed Zeeman splitting was found to decrease as the quantum well width was decreased. The decrease is partly due to the penetration of the electron and the hole wave functions into the non-magnetic CdMgTe barrier layers, and partly due to the k-dependence of the exchange interaction. It was found that the latter effect is much larger than theoretically predicted. The observed features are well explained by a model assuming the interface disorder within some thickness near the interface. In contrast to Jsp-d, the nearest neighbor interaction JNN estimated from the steps in the photoluminescence peak was found to be independent of the well width.

Polarimetric Thomson scattering for high Te fusion plasmas

NASA Astrophysics Data System (ADS)

Giudicotti, L.

2017-11-01

Polarimetric Thomson scattering (TS) is a technique for the analysis of TS spectra in which the electron temperature Te is determined from the depolarization of the scattered radiation, a relativistic effect noticeable only in very hot (Te >= 10 keV) fusion plasmas. It has been proposed as a complementary technique to supplement the conventional spectral analysis in the ITER CPTS (Core Plasma Thomson Scattering) system for measurements in high Te, low ne plasma conditions. In this paper we review the characteristics of the depolarized TS radiation with special emphasis to the conditions of the ITER CPTS system and we describe a possible implementation of this diagnostic method suitable to significantly improve the performances of the conventional TS spectral analysis in the high Te range.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zappettini, A.; Zambelli, N.; Benassi, G.

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Lifetime Measurement of HgCdTe Semiconductor Material

DTIC Science & Technology

2012-03-01

long-wavelength (>15 μm) infrared spectral region. HgCdTe is a very effective infrared detector material because of its different properties. The...properties that make HgCdTe an effective infrared detector are its adjustable bandgap of 0.7 to 25 μm, its high absorption coefficient, its moderate... HgCdTe infrared detectors . Retrieved Jul. 17, 2011, from http://www.wat.edu.pl/review/optor/10(3)159.pdf Wagner, R. J. (1999 Apr. 16). In

Electron heating and Tp/Te variations during magnetic dipolarizations

NASA Astrophysics Data System (ADS)

Grigorenko, Elena; Kronberg, Elena; Daly, Patrick; Ganushkina, Natalia; Lavraud, Benoit; Sauvaud, Jean-Andre; Zelenyi, Lev

2017-04-01

The proton-to-electron temperature ratio (Tp/Te) in the plasma sheet (PS) of the Earth's magnetotail is studied by using 5 years of Cluster observations (2001-2005). The PS intervals are searched within a region defined with -19Te varies over a wide range from a few units to several tens of units. In 86 PS intervals the Tp/Te decreases below 3.5. In the majority of these intervals the Tp/Te drops are observed during magnetotail dipolarizations. A superposed epoch analysis applied to these events shows that the minimum value of Tp/Te is observed after the dipolarization onset during the "turbulent phase" of dipolarization, when a number of transient Bz pulses are reduced, but the value of Bz field is still large and an intensification of wave activity is observed. The Tp/Te drops and associated increases of Te often coincide either with bursts of broadband electrostatic emissions, which may include electron cyclotron harmonics, or with broadband electromagnetic emission in a frequency range from proton plasma frequency (fpp) up to the electron gyrofrequency (fce). These findings show that the wave activity developing in the current sheet after dipolarization onset may play a role in the additional electron heating and the associated Tp/Te decrease. This work was supported by the Volskwagen Foundation (grant Az 90 312).

Forming mechanism of Te-based conductive-bridge memories

NASA Astrophysics Data System (ADS)

Mendes, M. Kazar; Martinez, E.; Marty, A.; Veillerot, M.; Yamashita, Y.; Gassilloud, R.; Bernard, M.; Renault, O.; Barrett, N.

2018-02-01

We investigated origins of the resistivity change during the forming of ZrTe/Al2O3 based conductive-bridge resistive random access memories. Non-destructive hard X-ray photoelectron spectroscopy was used to investigate redox processes with sufficient depth sensitivity. Results highlighted the reduction of alumina correlated to the oxidation of zirconium at the interface between the solid electrolyte and the active electrode. In addition the resistance switching caused a decrease of Zr-Te bonds and an increase of elemental Te showing an enrichment of tellurium at the ZrTe/Al2O3 interface. XPS depth profiling using argon clusters ion beam confirmed the oxygen diffusion towards the top electrode. A four-layer capacitor model showed an increase of both the ZrO2 and AlOx interfacial layers, confirming the redox process located at the ZrTe/Al2O3 interface. Oxygen vacancies created in the alumina help the filament formation by acting as preferential conductive paths. This study provides a first direct evidence of the physico-chemical phenomena involved in resistive switching of such devices.

High-Temperature Annealing of CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, J.; Hwang, S.; Yu, H.

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

High-Temperature Annealing of CdZnTe Detectors

DOE PAGES

Suh, J.; Hwang, S.; Yu, H.; ...

2017-11-10

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

Photoluminescence of vapor and solution grown ZnTe single crystals

NASA Astrophysics Data System (ADS)

Biao, Y.; Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.; Su, C.-H.; Volz, M. E.; Szofran, F. R.; Gillies, D. C.

1994-04-01

ZnTe single crystals grown by horizontal physical vapor transport (PVT) and by vertical traveling heater method (THM) from a Te solution were characterized by photoluminescence (PL) at 10.6 K and by atomic force microscopy (AFM). Copper was identified by PL as a major impurity existing in both crystals, forming a substitutional acceptor, Cu Zn. The THM ZnTe crystals were found to contain more Cu impurity than the PVT ZnTe crystals. The formation of Cu Zn-V Te complexes and the effects of annealing, oxygen contamination and intentional Cu doping were also studied. Finally, the surface morphology analyzed by AFM was correlated to the PL results.

Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor

NASA Astrophysics Data System (ADS)

Bendt, Georg; Gassa, Sanae; Rieger, Felix; Jooss, Christian; Schulz, Stephan

2018-05-01

Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

NASA Astrophysics Data System (ADS)

Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

2018-02-01

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

Design of epitaxial CdTe solar cells on InSb substrates

DOE PAGES

Song, Tao; Kanevce, Ana; Sites, James R.

2015-11-01

Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

On the ultraviolet photodissociation of H2Te

NASA Astrophysics Data System (ADS)

Alekseyev, Aleksey B.; Liebermann, Heinz-Peter; Wittig, Curt

2004-11-01

The photodissociation of H2Te through excitation in the first absorption band is investigated by means of multireference spin-orbit configuration interaction (CI) calculations. Bending potentials for low-lying electronic states of H2Te are obtained in C2v symmetry for Te-H distances fixed at the ground state equilibrium value of 3.14a0, as well as for the minimum energy path constrained to R1=R2. Asymmetric cuts of potential energy surfaces for excited states (at R1=3.14a0 and θ=90.3°) are obtained for the first time. It is shown that vibrational structure in the 380-400 nm region of the long wavelength absorption tail is due to transitions to 3A', which has a shallow minimum at large HTe-H separations. Transitions to this state are polarized in the molecular plane, and this state converges to the excited TeH(2Π1/2)+H(2S) limit. These theoretical data are in accord with the selectivity toward TeH(2Π1/2) relative to TeH(2Π3/2) that has been found experimentally for 355 nm H2Te photodissociation. The calculated 3A'←X˜A' transition dipole moment increases rapidly with HTe-H distance; this explains the observation of 3A' vibrational structure for low vibrational levels, despite unfavorable Franck-Condon factors. According to the calculated vertical energies and transition moment data, the maximum in the first absorption band at ≈245 nm is caused by excitation to 4A″, which has predominantly 21A″ (1B1 in C2v symmetry) character.

High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

PubMed

Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

2016-10-05

Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K 2 at 856 K in Ag and In co-doped SnTe (i.e., SnAg x In x Te 1+2x ). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg 0.025 In 0.025 Te 1.05 at 856 K.

Pressure effects on topological crystalline insulator SnTe and derived superconductor Sn{sub 0.5}In{sub 0.5}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, V. K.; Shruti,; Patnaik, S., E-mail: spatnaik@mail.jnu.ac.in

2016-05-23

We are reporting decrease in superconducting transition temperature accompanied by increased metallicity in indium doped SnTe superconductor. SnTe is a topological crystalline insulator and superconductivity is achieved by indium substitution in place of tin. With application of hydrostatic pressure we find negative dT{sub c}/dP of ~ -0.6K/GPa upto 2.5 GPa. The overall phenomenon is ascribed to unconventional superconductivity. Decrease in resistivity is also seen in single crystal SnTe with application of pressure but no evidence of superconductivity is observed.

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Song, Zhitang; Liu, Yan; Li, Tao; Zhang, Sifan; Song, Sannian; Feng, Songlin

2017-12-01

A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses. In this work, we put forward a safe and controllable method to prepare a SiGeAsTeN chalcogenide film by implanting As ions into sputtered SiGeTeN films. For the SiGeAsTeN material, the phase structure maintains the amorphous state, even at high temperature, indicating that no phase transition occurs for this chalcogenide-based material. The electrical test results show that the SiGeAsTeN-based devices exhibit good threshold switching characteristics and the switching voltage decreases with the increasing As content. The decrease in valence alternation pairs, reducing trap state density, may be the physical mechanism for lower switch-on voltage, which makes the SiGeAsTeN material more applicable in selector devices through component optimization.

Spatial Distribution of Dopant Incorporation in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guthrey, Harvey; Moseley, John; Colegrove, Eric

2016-11-21

In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reachmore » high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.« less

[Which approach of therapeutic education (TE) for adolescents and young adults with cancer? Experience from the TE working group of "Go-AJA"].

PubMed

Corradini, Nadège; Dagorne, Loïc; Retailleau, Marielle; Rédini, Françoise; Sudour-Bonnange, Hélène; Gofti-Laroche, Leila; Le Rhun, Anne; Gaspar, Nathalie

2016-12-01

Therapeutic education (TE) is a practice developed over 40 years at an international level to give people with chronic illness the skills necessary to help them better manage their disease. The lengthening survival time of cancer patients as well as changes in the patient-caregiver relationship have contributed to the development of TE in oncologic diseases. Every year in France, about 1900 adolescents and young adults (15-25 years old) are diagnosed with cancer which is the second leading cause of death in this age group. The observed survival rates for these patients are lower when compared with children's. Some of the hypotheses put forward to explain this difference include a lack of constancy in care and a non-following treatment, as failure to adhere to therapies is common in this age group. "Go-AJA", an interdisciplinary national organization established in 2012, aims to improve the quality of care and treatment results for AYA living with cancer. Therapeutic education for AYA in oncology is an active working group of "Go-AJA" and intends to draw recommendations and to improve adapted communication on different education topics. Elaboration and preparation of TE programs by skilled multidisciplinary teams engaged in interactive educational actions is the first and most crucial step. The TE "Go-AJA" working group has federated pediatric and adult oncologists, nurses, psychologists, TE professionals, and resource patients, thanks to the commitment of professionals from the 8 national teams supported by the National Cancer Institute. Physical meetings and conference calls were organized from 2012 to 2015 to construct TE tools and programs for AYA with cancer. A competence referential was built and adapted to AYA population with cancer, after focused groups organized in 2 main oncology centers with on-therapy sarcoma patients and members of the multidisciplinary TE working group. Tools were validated and adapted to adolescents or young adults with cancer, to

Thermoelectric properties of Nb3SbxTe7-x compounds

NASA Technical Reports Server (NTRS)

Snyder, J.; Wang, S.; Caillat, T.

2002-01-01

Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

Novel two-dimensional ferroelectric PbTe under tension: A first-principles prediction

NASA Astrophysics Data System (ADS)

Zhang, Xilin; Yang, Zongxian; Chen, Yue

2017-08-01

Enhanced ferroelectricity in two-dimensional (2D) SnTe exhibiting a higher transition temperature (Tc) than its bulk counterpart was recently discovered [Chang et al., Science 353(6296), 274-278 (2016)]. Herein, we report that nonferroelectric PbTe can be transformed into a ferroelectric phase by downsizing to two dimensions with suitable equi-biaxial tension. The crystal structure of the ferroelectric phase of 2D PbTe was determined using evolutionary algorithms and density functional theory. The dynamic stabilities of the predicted new phases were investigated using phonon calculations. To validate our results obtained using PbTe, we have also studied the ferroelectricity in GeTe and SnTe at the 2D level and compared them with the literature. The unequal lattice constants and the relative atomic displacements are found to be responsible for ferroelectricity in 2D GeTe, SnTe, and strained PbTe. This study facilitates the development of new 2D ferroelectrics via strain engineering and promotes the integration of ferroelectric devices.

Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array.

PubMed

Nie, Kui-Ying; Tu, Xuecou; Li, Jing; Chen, Xuanhu; Ren, Fang-Fang; Zhang, Guo-Gang; Kang, Lin; Gu, Shulin; Zhang, Rong; Wu, Peiheng; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Ye, Jiandong

2018-06-14

The ability to manipulate light-matter interaction in semiconducting nanostructures is fascinating for implementing functionalities in advanced optoelectronic devices. Here, we report the tailoring of radiative emissions in a ZnTe/ZnTe:O/ZnO core-shell single nanowire coupled with a one-dimensional aluminum bowtie antenna array. The plasmonic antenna enables changes in the excitation and emission processes, leading to an obvious enhancement of near band edge emission (2.2 eV) and subgap excitonic emission (1.7 eV) bound to intermediate band states in a ZnTe/ZnTe:O/ZnO core-shell nanowire as well as surface-enhanced Raman scattering at room temperature. The increase of emission decay rate in the nanowire/antenna system, probed by time-resolved photoluminescence spectroscopy, yields an observable enhancement of quantum efficiency induced by local surface plasmon resonance. Electromagnetic simulations agree well with the experimental observations, revealing a combined effect of enhanced electric near-field intensity and the improvement of quantum efficiency in the ZnTe/ZnTe:O/ZnO nanowire/antenna system. The capability of tailoring light-matter interaction in low-efficient emitters may provide an alternative platform for designing advanced optoelectronic and sensing devices with precisely controlled response.

GW quasiparticle energy study of ternary tetradymite Bi2Te2Se and Bi2Te2S thin films

NASA Astrophysics Data System (ADS)

Shuaibu, Alhassan; Rahman, Md. Mahmudur; Zainuddin, Hishamuddin; Talib, Zainal Abidin; Muhida, Rifki

2015-04-01

In this work, we have evaluated the quasiparticle energies of ternary tetradymite Bi2Te2Se and Bi2Te2S using first-principles calculation within the G0W0 methods. We have also performed a broad convergence tests in order to investigate the quasiparticle corrections to the structural parameters and to the semi core d electrons in both of the compounds. For each case, we have calculated the many-body corrections within a one-shot GW method of the compounds. Our results have shown that for Bi2Te2Se the GW corrections increase the band gap to almost 10%, and for specific atomic positions, the band structure shows a close value to the experimental one. For Bi2Te2S, despite increase in the band gap due to the GW corrections, possibility of bulk resistivity that can be significant for photovoltaic applications was observed.

Initial performance studies of a general-purpose detector for multi-TeV physics at a 100 TeV pp collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chekanov, S. V.; Beydler, M.; Kotwal, A. V.

This paper describes simulations of detector response to multi-TeV physics at the Future Circular Collider (FCC-hh) or Super proton-proton Collider (SppC) which aim to collide proton beams with a centre-of-mass energy of 100 TeV. The unprecedented energy regime of these future experiments imposes new requirements on detector technologies which can be studied using the detailed GEANT4 simulations presented in this paper. The initial performance of a detector designed for physics studies at the FCC-hh or SppC experiments is described with an emphasis on measurements of single particles up to 33 TeV in transverse momentum. The reconstruction of hadronic jets hasmore » also been studied in the transverse momentum range from 50 GeV to 26 TeV. The granularity requirements for calorimetry are investigated using the two-particle spatial resolution achieved for hadron showers.« less

GaTe semiconductor for radiation detection

DOEpatents

Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA

2009-06-23

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

The tomato res mutant which accumulates JA in roots in non-stressed conditions restores cell structure alterations under salinity.

PubMed

Garcia-Abellan, José O; Fernandez-Garcia, Nieves; Lopez-Berenguer, Carmen; Egea, Isabel; Flores, Francisco B; Angosto, Trinidad; Capel, Juan; Lozano, Rafael; Pineda, Benito; Moreno, Vicente; Olmos, Enrique; Bolarin, Maria C

2015-11-01

Jasmonic acid (JA) regulates a wide spectrum of plant biological processes, from plant development to stress defense responses. The role of JA in plant response to salt stress is scarcely known, and even less known is the specific response in root, the main plant organ responsible for ionic uptake and transport to the shoot. Here we report the characterization of the first tomato (Solanum lycopersicum) mutant, named res (restored cell structure by salinity), that accumulates JA in roots prior to exposure to stress. The res tomato mutant presented remarkable growth inhibition and displayed important morphological alterations and cellular disorganization in roots and leaves under control conditions, while these alterations disappeared when the res mutant plants were grown under salt stress. Reciprocal grafting between res and wild type (WT) (tomato cv. Moneymaker) indicated that the main organ responsible for the development of alterations was the root. The JA-signaling pathway is activated in res roots prior to stress, with transcripts levels being even higher in control condition than in salinity. Future studies on this mutant will provide significant advances in the knowledge of JA role in root in salt-stress tolerance response, as well as in the energy trade-off between plant growth and response to stress. © 2015 Scandinavian Plant Physiology Society.

New Zealand Perspectives on Early Childhood Education: Naku Te Rourou Nau Te Rourou Ka Ora Ai Te Iwi

ERIC Educational Resources Information Center

Tesar, Marek

2016-01-01

This special issue focuses on histories, pedagogies, policies, philosophies and alternative perspectives in early childhood education. "Te Whariki" is heralded as the first bicultural curriculum not only in New Zealand, but in the world. Its importance is reflected in national and international research and early childhood discourses.…

Self-compensation in arsenic doping of CdTe

DOE PAGES

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian; ...

2017-07-04

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

Self-compensation in arsenic doping of CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

A TE-mode accelerator

NASA Astrophysics Data System (ADS)

Takeuchi, S.; Sakai, K.; Matsumoto, M.; Sugihara, R.

1987-04-01

An accelerator is proposed in which a TE-mode wave is used to drive charged particles in contrast to the usual linear accelerators in which longitudinal electric fields or TM-mode waves are supposed to be utilized. The principle of the acceleration is based on the V(p) x B acceleration of a dynamo force acceleration, in which a charged particle trapped in a transverse wave feels a constant electric field (Faraday induction field) and subsequently is accelerated when an appropriate magnetic field is externally applied in the direction perpendicular to the wave propagation. A pair of dielectric plates is used to produce a slow TE mode. The conditions of the particle trapping the stabilization of the particle orbit are discussed.

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

PubMed

Kowalczyk, Philippe; Hippert, Françoise; Bernier, Nicolas; Mocuta, Cristian; Sabbione, Chiara; Batista-Pessoa, Walter; Noé, Pierre

2018-06-01

Van der Waals layered GeTe/Sb 2 Te 3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb 2 Te 3 SLs are made by periodically stacking ultrathin GeTe and Sb 2 Te 3 crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb 2 Te 3 SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge 2 Sb 2 Te 5 blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

NASA Astrophysics Data System (ADS)

Bragaglia, Valeria; Mio, Antonio M.; Calarco, Raffaella

2017-08-01

A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

Energy spectra of cosmic rays above 1 TeV per nucleon

NASA Technical Reports Server (NTRS)

Burnett, T. H.; Dake, S.; Derrickson, J. H.; Fountain, W. F.; Fuki, M.

1990-01-01

Direct measurements of cosmic-ray nuclei above 1 TeV/nucleon have been performed in a series of balloon-borne experiments with emulsion chambers. The observed all-particle spectrum above 20 TeV is consistent with the results of the Proton satellite and many air shower experiments. The proton spectrum is consistent with a power law having an index of 2.76 + or - 0.09 up to at least 100 TeV, but an overabundance of helium by a factor of 2 above 2 TeV per nucleon is found when compared with the extrapolation from the low energies. For heavy elements (C through Fe), the intensities around 1 TeV/nucleon are consistent, within the statistical errors, with the extrapolation from lower energy data using the Spacelab 2 spectral indices. An enhancement for the medium-heavy components (C through Ca) above 200 TeV is indicated. The mean mass above 50 TeV indicates slightly higher values than the results of the air shower experiments.

Transparent ohmic contacts for solution-processed, ultrathin CdTe solar cells

DOE PAGES

Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; ...

2016-12-19

Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. Furthermore, we used scanning Kelvin probe microscopy to further show how the above approaches improved carriermore » collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A 2CdTe 2 (A = Na, K, Cs, N 2H 5), can be used in conjunction with current/light soaking to improve PCE further.« less

Thermodynamic Re-modeling of the Sb-Te System Using Associate and Ionic Models

NASA Astrophysics Data System (ADS)

Guo, Cuiping; Li, Changrong; Du, Zhenmin

2014-11-01

The Sb-Te system is re-modeled using the calculation of phase diagram (CALPHAD) technique. The liquid phase is modeled as (Sb, Sb2Te3, Te) using the associate model and as (Sb3+) p (Te2-,Te,Va) q using the ionic model. The solution phases rhom(Sb) and hex(Te) are described as substitutional solutions. Two compounds, delta and gamma, are treated as (Sb)0.4(Sb,Te)0.6 according to their homogeneity ranges, while the compound Sb2Te3 follows a strict stoichiometry. A set of self-consistent thermodynamic parameters is obtained. Using these thermodynamic parameters, the experimental Sb-Te phase diagram, mixing enthalpies of liquid at 911 K and 935 K, activities of Sb and Te in liquid at 911 K and 1023 K, and Gibbs energy of liquid at 911 K, is well reproduced by the calculations. And the calculated enthalpy of formation, enthalpy of fusion, and heat capacity of Sb2Te3 are also in fairly good agreement with all the available experimental data.

Induced superconductivity in the three-dimensional topological insulator HgTe.

PubMed

Maier, Luis; Oostinga, Jeroen B; Knott, Daniel; Brüne, Christoph; Virtanen, Pauli; Tkachov, Grigory; Hankiewicz, Ewelina M; Gould, Charles; Buhmann, Hartmut; Molenkamp, Laurens W

2012-11-02

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as a superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements. This anomaly originates from proximity-induced superconductivity in the HgTe surface states. In the most transparent junction, we observe periodic oscillations of the differential resistance as a function of an applied magnetic field, which correspond to a Fraunhofer-like pattern. This unambiguously shows that a precursor of the Josephson effect occurs in the topological surface states of HgTe.

Effect of intermixing at CdS/CdTe interface on defect properties

NASA Astrophysics Data System (ADS)

Park, Ji-Sang; Yang, Ji-Hui; Barnes, Teresa; Wei, Su-Huai

2016-07-01

We investigated the stability and electronic properties of defects in CdTe1-xSx that can be formed at the CdS/CdTe interface. As the anions mix at the interface, the defect properties are significantly affected, especially those defects centered at cation sites like Cd vacancy, VCd, and Te on Cd antisite, TeCd, because the environment surrounding the defect sites can have different configurations. We show that at a given composition, the transition energy levels of VCd and TeCd become close to the valence band maximum when the defect has more S atoms in their local environment, thus improving the device performance. Such beneficial role is also found at the grain boundaries when the Te atom is replaced by S in the Te-Te wrong bonds, reducing the energy of the grain boundary level. On the other hand, the transition levels with respect to the valence band edge of CdTe1-xSx increases with the S concentration as the valence band edge decreases with the S concentration, resulting in the reduced p-type doping efficiency.

Superconducting Bi 2Te: Pressure-induced universality in the (Bi 2) m(Bi 2Te 3) n series

DOE PAGES

Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; ...

2016-03-09

Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi 2Te, a member of the infinitely adaptive (Bi 2)m(Bi 2Te 3)n series, whose end members, Bi and Bi 2Te 3, can be tuned to display topological surface states or superconductivity. Bi 2Te has a maximum T c = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seenmore » via x-ray diffraction measurements. In addition, the linearity of H c2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction.

PubMed

Crisp, Ryan W; Pach, Gregory F; Kurley, J Matthew; France, Ryan M; Reese, Matthew O; Nanayakkara, Sanjini U; MacLeod, Bradley A; Talapin, Dmitri V; Beard, Matthew C; Luther, Joseph M

2017-02-08

We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (E g = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm 2 in prototype devices.

Improved photovoltaic properties of ZnTeO-based intermediate band solar cells

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Saito, Katsuhiko; Guo, Qixin; Yu, Kin Man; Walukiewicz, Wladek

2018-02-01

Highly mismatched ZnTe1-xOx (ZnTeO) alloy is one of the potential candidates for an absorber material in a bulk intermediate band solar cell (IBSC) because a narrow, O-derived intermediate band IB (E-) is formed well below the conduction band CB (E+) edge of the ZnTe. We have previously demonstrated the generation of photocurrent induced by two-step photon absorption (TSPA) in ZnTeO IBSCs using n-ZnO window layer. However, because of the large conduction band offset (CBO) between ZnTe and ZnO, only a small open circuit voltage (Voc) was observed in this structure. Here, we report our recent progress on the development of ZnTeO IBSCs with n-ZnS window layer. ZnS has a large direct band gap of 3.7 eV with an electron affinity of 3.9 eV that can realize a smaller CBO with ZnTe. We have grown n-type ZnS thin films on ZnTe substrates by molecular beam epitaxy (MBE), and demonstrated ZnTe solar cells and ZnTeO IBSCs using n-ZnS window layer with an improved VOC. Especially, a n-ZnS/i-ZnTe/p-ZnTe solar cell showed an improved Voc of 0.77 V, a large short-circuit current density of 6.7 mA/cm2 with a fill factor of 0.60, yielding the power conversion efficiency of 3.1 %, under 1 sun illumination.

Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects.

PubMed

Li, Wen; Zheng, Linglang; Ge, Binghui; Lin, Siqi; Zhang, Xinyue; Chen, Zhiwei; Chang, Yunjie; Pei, Yanzhong

2017-05-01

Compared to commercially available p-type PbTe thermoelectrics, SnTe has a much bigger band offset between its two valence bands and a much higher lattice thermal conductivity, both of which limit its peak thermoelectric figure of merit, zT of only 0.4. Converging its valence bands or introducing resonant states is found to enhance the electronic properties, while nanostructuring or more recently introducing interstitial defects is found to reduce the lattice thermal conductivity. Even with an integration of some of the strategies above, existing efforts do not enable a peak zT exceeding 1.4 and usually involve Cd or Hg. In this work, a combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements. This opens new possibilities for further improvements and promotes SnTe as an environment-friendly solution for conventional p-PbTe thermoelectrics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chalcogen (O2, S, Se, Te) atmosphere annealing induced bulk superconductivity in Fe1+yTe1-xSex single crystal

NASA Astrophysics Data System (ADS)

Sun, Y.; Tsuchiya, Y.; Yamada, T.; Taen, T.; Pyon, S.; Shi, Z. X.; Tamegai, T.

2014-09-01

We reported a detailed study of Fe1+yTe0.6Se0.4 single crystals annealed in the atmosphere of chalcogens (O2, S, Se, Te). After annealing with appropriate amount of chalcogens, Fe1+yTe0.6Se0.4 single crystals show Tc higher than 14 K with a sharp transition width ∼1 K. Critical current density Jc for the annealed crystals reach a very high value ∼2-4 × 105 A/cm2 under zero field, and is also robust under applied field at low temperatures. Magneto-optical imaging reveal that the Jc is homogeneously distributed in the annealed crystals and isotropic in the ab-plane. Our results show that annealing in the atmosphere of chalcogens can successfully induce bulk superconductivity in Fe1+yTe0.6Se0.4.

Computational Exploration of the Surface Properties of Cs2Te5 Photoemissive Material

NASA Astrophysics Data System (ADS)

Ruth, Anthony; Nemeth, Karoly; Harkay, Katherine; Spentzouris, Linda; Terry, Jeff

2013-03-01

Cs2Te is a broadly used photoemissive material due to its exceptionally high quantum efficiency (~ 20%). Our group has recently predicted that the acetylation of this material (Cs2TeC2) would lower its workfunction down to about 2.4 eV from ~ 3 eV, and preserve its high quantum efficiency. Such a modification is advantageous because visible light can be used in the operation of such a photoemissive device instead of ultraviolet light. To explore other variants of Cs2Te, we conducted DFT-based computational analysis of the photoemissive properties of Cs2Te5 which is a known phase of Cs and Te. Cs2Te5 attracted our attention for its rod-like 1D Te substructures embedded in a Cs matrix. This structure is similar to Cs2TeC2 as Cs2TeC2 contains TeC2 polymeric rods in a Cs matrix. In addition to that, exploration of various Cesium Telluride phases is necessary to better understand the working of Cs2Te photocathodes. We have calculated surface energies, workfunctions, and optical absorption spectra of several different surfaces of Cs2Te5. A comparison of the properties of various Cs2Te5 surfaces and their utilization in photoemissive devices will be presented.

Structural and optical properties of electron-beam-evaporated ZnSe 1- x Te x Ternary compounds with various Te contents

NASA Astrophysics Data System (ADS)

Suthagar, J.; Suthan Kissinger, N. J.; Sharli Nath, G. M.; Perumal, K.

2014-01-01

ZnSe1- x Te x films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe1- x Te x films were studied in the present work. The host material ZnSe1- x Te x , were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10-5 mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E g ) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is alsomore » reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.« less

Interface Properties and Surface Leakage of HgCdTe Photodiodes.

DTIC Science & Technology

1980-01-01

these techniques, we found that (a) the com- position of a 1200 )anodic film is 68% TeO2 , 27% CdO, and 6% HgO, and (b) the cations, especially the Hg...of TeO2 (Fig. 1); (b) irradiation with an electron beam of a few keV energy can convert the surface layer (10-100 1) of (Rg,Cd)Te into CdTe (Fig. 2...remove the scratches. The polishing cloth was secured to a glass olishing disk which is not affected by the corrosive nature of the etch - a 5

Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Krishna, Ramesh M.; Pak, Rahmi O.; Mannan, Mohammad A.

2014-09-01

CdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from zone refined ultra-pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled, and optimized by a computer simulation and modeling program developed in our laboratory. The grown crystals were thoroughly characterized after cutting wafers from the ingots and processed by chemo-mechanical polishing (CMP). The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ~10 μm for CdTe and ~8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm-2 for CdTe and ≤ 3×104 cm-2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ~ 1.5×1010 Ω-cm for CdTe and 2-5×1011 Ω-cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe = 2×10-3 cm2/V (μτh = 8×10-5 cm2/V) and 3-6×10-3 cm2/V (μτh = 4- 6×10-5 cm2/V) for CdTe and CZT, respectively. Detectors in single pixel, Frisch collar, and coplanar grid geometries were fabricated. Detectors in Frisch grid and guard-ring configuration were found to exhibit energy resolution of 1.4% and 2.6 %, respectively, for 662 keV gamma rays. Assessments of the detector performance have been carried out also using 241Am (60 keV) showing energy resolution of 4.2% FWHM.

Enhancement of Thermoelectric Properties in SnTe with (Ag, In) Co-Doping

NASA Astrophysics Data System (ADS)

Li, J. Q.; Yang, N.; Li, S. M.; Li, Y.; Liu, F. S.; Ao, W. Q.

2018-01-01

A lead-free SnTe compound shows good electrical property but high thermal conductivity, resulting in a low figure-of-merit ZT. We present a significant enhancement of the thermoelectric properties of p-type SnTe with (Ag, In) co-doping. The Ag and In co-doped Sn1-2 x Ag x In x Te ( x = 0.00, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by melting, quenching and spark plasma sintering. A homogeneous NaCl-type SnTe-based solid solution forms in the alloys at low Ag and In content ( x ≤ 0.02), while a AgInTe2 minor secondary phase precipitates for higher x. Similar to In doping, the introduction of Ag and In at Sn sites in SnTe considerably increases the Seebeck coefficient and power factor by creating resonant levels near the Fermi energy. In addition, the Ag and In solute atoms in the SnTe-based solid solution and the minor secondary phase AgInTe2 enhance phonon scattering and thus significantly reduce the carrier and lattice thermal conductivity. Ag and In co-doping shows a collective advantage on the overall thermoelectric performance of SnTe or In-doped SnTe. A maximum ZT of 1.23 at 873 K and average ZT of 0.58 can be obtained in the alloy Sn1-2 x Ag x In x Te with x = 0.03.

Electronic signatures of dimerization in IrTe2

NASA Astrophysics Data System (ADS)

Dai, Jixia; Wu, Weida; Oh, Yoon Seok; Cheong, S.-W.; Yang, J. J.

2014-03-01

Recently, the mysterious phase transition around Tc ~ 260 K in IrTe2 has been intensively studied. A structural supermodulation with q =1/5 was identified below Tc. A variety of microscopic mechanisms have been proposed to account for this transition, including charge-density wave due to Fermi surface nesting, Te p-orbital driven structure instability, anionic depolymerization, ionic dimerization, and so on. However, there has not been an unified picture on the nature of this transition. To address this issue, we have performed low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) experiments on IrTe2 and IrTe2-xSex. Our STM data clearly shows a strong bias dependence in both topography and local density of states (STS) maps. High resolution spectroscopic data further confirms the stripe-like electronic states modulation, which provides insight to the ionic dimerization revealed by X-ray diffraction.

Fluorescence properties of alloyed ZnSeS quantum dots overcoated with ZnTe and ZnTe/ZnS shells

NASA Astrophysics Data System (ADS)

Adegoke, Oluwasesan; Mashazi, Philani; Nyokong, Tebello; Forbes, Patricia B. C.

2016-04-01

Fluorescent alloyed ternary ZnSeS quantum dots (QDs) have been synthesized via the pyrolysis of organometallic precursors. The effects of passivation of ZnTe and ZnTe/ZnS shells on the optical properties of the ternary alloyed ZnSeS core have been studied. A ligand exchange reaction using L-cysteine as a capping ligand was used to obtain water-soluble nanocrystals. The nanocrystals were each characterized by UV/vis absorption and fluorescence spectroscopy, transmission electron microscopy, X-ray diffractometry (XRD) and X-ray photoelectron spectroscopy (XPS). The photoluminescence (PL) quantum yield (QY) of alloyed ZnSeS QDs was 14% and this value increased to 27% when ZnTe was overcoated around the surface but further coating with a ZnS shell decreased the PL QY slightly to 24%. This implies that ZnTe shell suppressed non-radiative recombination exciton states in the alloyed core while further layering with a ZnS shell offered no further improvement in suppressing the defect states. XPS analysis confirmed the presence of the first shell layering but showed a weakened intensity signal of S (2p) and Se (3d) for the ZnSeS/ZnTe/ZnS QDs. Our work demonstrates for the first time that shell passivation of alloyed Zn-based QDs can offer improved optical properties. We hope the optical information presented in this work will be useful in the selection of alloyed Zn-based QDs appropriate for the intended application.

Modelling of MWIR HgCdTe complementary barrier HOT detector

NASA Astrophysics Data System (ADS)

Martyniuk, Piotr; Rogalski, Antoni

2013-02-01

The paper reports on the photoelectrical performance of medium wavelength infrared (MWIR) HgCdTe complementary barrier infrared detector (CBIRD) with n-type barriers. CBIRD nB1nB2 HgCdTe/B1,2-n type detector is modelled with commercially available software APSYS by Crosslight Software Inc. The detailed analysis of the detector's performance such as dark current, photocurrent, responsivity, detectivity versus applied bias, operating temperature, and structural parameters (cap, barriers and absorber doping; and absorber and barriers compositions) are performed pointing out optimal working conditions. Both conduction and valence bands' alignment of the HgCdTe CBIRD structure are calculated stressing their importance on detectors performance. It is shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allows to obtain detectivities D∗ ≈ 2 × 1010 cm Hz1/2/W at T = 200 K and reverse polarisation V = 400 mV, and differential resistance area product RA = 0.9 Ωcm2 at T = 230 K for V = 50 mV, respectively. Finally, CBIRD nB1nB2 HgCdTe/B1,2-n type state of the art is compared to unipolar barrier HgCdTe nBn/B-n type detector, InAs/GaSb/B-Al0.2Ga0.8Sb type-II superlattice (T2SL) nBn detectors, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes' performance operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR CBIRD HgCdTe detector is either comparable or higher (depending on structural parameters) to the state of the art of HgCdTe HOT bulk photodiodes and both AIIIBV 6.1 Å family T2SLs nBn and PIN detectors.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

NASA Astrophysics Data System (ADS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

NASA Technical Reports Server (NTRS)

Li, C.; Su, C.; Lehoczky, S. L.; Scripa, R. N.; Ban, H.; Lin, B.

2004-01-01

The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

Ba 2TeO: A new layered oxytelluride

DOE PAGES

Besara, T.; Ramirez, D.; Sun, J.; ...

2015-02-01

For single crystals of the new semiconducting oxytelluride phase, Ba 2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba 2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba 2TeO is highly insulating.

Study of tellurium precipitates in CdTe crystals

NASA Technical Reports Server (NTRS)

Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

1993-01-01

The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

Facile synthesis of PdAgTe nanowires with superior electrocatalytic activity

NASA Astrophysics Data System (ADS)

Hong, Wei; Wang, Jin; Wang, Erkang

2014-12-01

In this work, ultrathin Te nanowires (NWs) with high-aspect-ratio are prepared by a simple hydrothermal method. By using Te NWs as the sacrificial template, we demonstrate a facile and efficient method for the synthesis of PdAgTe NWs with high-quality through the partly galvanic replacement between Te NWs and the corresponding noble metal salts precursors in an aqueous solution. The compositions of PdAgTe NWs can be tuned by simply altering the concentration of the precursors. After cyclic voltammetry treatment, multi-component PdAgTe NW with a highly active and stable surface can be obtained. The structure and composition of the as-prepared nanomaterials are analyzed by transmission electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, inductively coupled plasma-mass spectroscopy and X-ray photoelectron spectroscopy. Electrochemical catalytic measurement results prove that the as synthesized PdAgTe NWs present superior catalytic activity toward ethanol electrooxidation in alkaline solution than the commercial Pd/C catalyst, which making them can be used as effective catalysts for the direct ethanol fuel cells.

Elastic and transport properties of topological semimetal ZrTe

NASA Astrophysics Data System (ADS)

Guo, San-Dong; Wang, Yue-Hua; Lu, Wan-Li

2017-11-01

Topological semimetals may have substantial applications in electronics, spintronics, and quantum computation. Recently, ZrTe was predicted as a new type of topological semimetal due to the coexistence of Weyl fermions and massless triply degenerate nodal points. In this work, the elastic and transport properties of ZrTe are investigated by combining the first-principles calculations and semiclassical Boltzmann transport theory. Calculated elastic constants prove the mechanical stability of ZrTe, and the bulk modulus, shear modulus, Young’s modulus, and Poisson’s ratio also are calculated. It is found that spin-orbit coupling (SOC) has slightly enhanced effects on the Seebeck coefficient, which along the a(b) and c directions for pristine ZrTe at 300 K is 46.26 μVK-1 and 80.20 μVK-1, respectively. By comparing the experimental electrical conductivity of ZrTe (300 K) with the calculated value, the scattering time is determined as 1.59 × 10-14 s. The predicted room-temperature electronic thermal conductivity along the a(b) and c directions is 2.37 {{Wm}}-1{{{K}}}-1 and 2.90 {{Wm}}-1{{{K}}}-1, respectively. The room-temperature lattice thermal conductivity is predicted as 17.56 {{Wm}}-1{{{K}}}-1 and 43.08 {{Wm}}-1{{{K}}}-1 along the a(b) and c directions, showing very strong anisotropy. Calculated results show that isotope scattering produces an observable effect on lattice thermal conductivity. To observably reduce lattice thermal conductivity by nanostructures, the characteristic length should be smaller than 70 nm, based on cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP) at 300 K. It is noted that the average room-temperature lattice thermal conductivity of ZrTe is slightly higher than that of isostructural MoP, which is due to larger phonon lifetimes and smaller Grüneisen parameters. Finally, the total thermal conductivity as a function of temperature is predicted for pristine ZrTe. Our works provide valuable

Novel Approach to Front Contact Passivation for CdTe Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kephart, Jason M.

2018-02-18

The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg1-xCdxTe with CdTe interlayer created in situ during MBE growth

NASA Astrophysics Data System (ADS)

Voitsekhovskii, Alexander V.; Nesmelov, Sergey N.; Dzyadukh, Stanislav M.; Varavin, Vasily S.; Dvoretsky, Sergey A.; Mikhailov, Nikolay N.; Yakushev, Maksim V.; Sidorov, Georgy Yu.

2017-11-01

Heterostructures based on n-Hg1-xCdxTe (x = 0.23-0.40) with near-surface graded-gap layers were grown by molecular beam epitaxy on Si (013) substrates. At 77 K, the admittance of the In/Al2O3/Hg1-xCdxTe metal-insulator-semiconductor (MIS) structures with grown in situ CdTe intermediate layer and without such a layer was investigated. It has been established that MIS structures of In/Al2O3/Hg1-xCdxTe with an interlayer of in situ grown CdTe are characterized by the electrical strength of the dielectric and the qualitative interface. The hysteresis of the capacitive characteristics is practically absent within a small range of variation in the bias voltage. The density of fast surface states at the minimum does not exceed 2.2 × 1010 eV-1 cm-2. MIS structures of In/Al2O3/Hg1-xCdxTe without an intermediate layer of CdTe have significantly higher densities of fast and slow surface states, as well as lower values of the differential resistance of the space-charge region in the regime of strong inversion.

Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

NASA Astrophysics Data System (ADS)

Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.

2016-05-01

The donor impurity binding energy in CdTe / Cd1-xMnxTe QWW with square well confinement along x - direction and parabolic confinement along y - direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

Low-Cost Lattice Matching Si Based Composite Substrates for HgCdTe

DTIC Science & Technology

2013-09-01

211). ..............................................5 Figure 3. Relationship between calculated alloy compositions based on Se/CdTe BEP ratio and...Se:CdTe beam equivalent pressure ( BEP ) ratios. During CdSeTe growth, Se and Te are in competition for the same nucleation sites. If we assume that all...therefore, x(cal) = ΦSe/ΦCd = 2ΦSe/ΦCdTe, where Φ is the BEP of the material, measured by the nude ion gauge at the substrate position. Figure 3 shows the

Microstructure and phase composition of hypoeutectic Te-Bi alloy as evaporation source for photoelectric cathode

NASA Astrophysics Data System (ADS)

Wang, Bao-guang; Yang, Wen-hui; Gao, Hong-ye; Tian, Wen-huai

2018-05-01

A hypoeutectic 60Te-40Bi alloy in mass percent was designed as a tellurium atom evaporation source instead of pure tellurium for an ultraviolet detection photocathode. The alloy was prepared by slow solidification at about 10-2 K·s-1. The microstructure, crystal structure, chemical composition, and crystallographic orientation of each phase in the as-prepared alloy were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. The experimental results suggest that the as-prepared 60Te-40Bi alloy consists of primary Bi2Te3 and eutectic Bi2Te3/Te phases. The primary Bi2Te3 phase has the characteristics of faceted growth. The eutectic Bi2Te3 phase is encased by the eutectic Te phase in the eutectic structure. The purity of the eutectic Te phase reaches 100wt% owing to the slow solidification. In the eutectic phases, the crystallographic orientation relationship between Bi2Te3 and Te is confirmed as {[0001]_{B{i_2}T{e_3}}}//{[1\\bar 21\\bar 3]_{Te}} and the direction of Te phase parallel to {[11\\bar 20]_{B{i_2}T{e_3}}} is deviated by 18° from Te N{(2\\bar 1\\bar 11)_{Te}}.

Measurement of the WZ production cross section in pp collisions at $$\\sqrt{s} = 7$$ and 8 $$\\,\\text{TeV}$$ TeV and search for anomalous triple gauge couplings at $$\\sqrt{s} = 8\\,\\text{TeV} $$

DOE PAGES

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; ...

2017-04-12

The WZ production cross section is measured by the CMS experiment at the CERN LHC in proton-proton collision data samples corresponding to integrated luminosities of 4.9 fbmore » $$^{-1}$$ collected at $$ \\sqrt{s} = $$ 7 TeV, and 19.6 fb$$^{-1}$$ at $$ \\sqrt{s} = $$ 8 TeV. The measurements are performed using the fully-leptonic WZ decay modes with electrons and muons in the final state. The measured cross sections for 71 $$ < m_{\\mathrm{ Z }} < $$ 111 GeV are $$\\sigma(\\mathrm{ p }\\mathrm{ p }\\to\\mathrm{ W }\\mathrm{ Z };\\ \\sqrt{s} = 7\\, \\mathrm{TeV}) =$$ 20.14 $$\\pm$$ 1.32 (stat) $$\\pm$$ 1.13 (syst) $$\\pm$$ 0.44 (lumi) pb and $$\\sigma(\\mathrm{ p }\\mathrm{ p }\\to\\mathrm{ W }\\mathrm{ Z };\\ \\sqrt{s} = 8\\, \\mathrm{TeV}) =$$ 24.09 $$\\pm$$ 0.87 (stat) $$\\pm$$ 1.62 (syst) $$\\pm$$ 0.63 (lumi) pb. Differential cross sections with respect to the Z boson p$$_{\\mathrm{T}}$$, the leading jet $$p_{\\mathrm{T}}$$, and the number of jets are obtained using the $$\\sqrt{s} =$$ 8 TeV data. Lastly, the results are consistent with standard model predictions and constraints on anomalous triple gauge couplings are obtained.« less

Measurement of the WZ production cross section in pp collisions at $$\\sqrt{s} = 7$$ and 8 $$\\,\\text{TeV}$$ TeV and search for anomalous triple gauge couplings at $$\\sqrt{s} = 8\\,\\text{TeV} $$

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.

The WZ production cross section is measured by the CMS experiment at the CERN LHC in proton-proton collision data samples corresponding to integrated luminosities of 4.9 fbmore » $$^{-1}$$ collected at $$ \\sqrt{s} = $$ 7 TeV, and 19.6 fb$$^{-1}$$ at $$ \\sqrt{s} = $$ 8 TeV. The measurements are performed using the fully-leptonic WZ decay modes with electrons and muons in the final state. The measured cross sections for 71 $$ < m_{\\mathrm{ Z }} < $$ 111 GeV are $$\\sigma(\\mathrm{ p }\\mathrm{ p }\\to\\mathrm{ W }\\mathrm{ Z };\\ \\sqrt{s} = 7\\, \\mathrm{TeV}) =$$ 20.14 $$\\pm$$ 1.32 (stat) $$\\pm$$ 1.13 (syst) $$\\pm$$ 0.44 (lumi) pb and $$\\sigma(\\mathrm{ p }\\mathrm{ p }\\to\\mathrm{ W }\\mathrm{ Z };\\ \\sqrt{s} = 8\\, \\mathrm{TeV}) =$$ 24.09 $$\\pm$$ 0.87 (stat) $$\\pm$$ 1.62 (syst) $$\\pm$$ 0.63 (lumi) pb. Differential cross sections with respect to the Z boson p$$_{\\mathrm{T}}$$, the leading jet $$p_{\\mathrm{T}}$$, and the number of jets are obtained using the $$\\sqrt{s} =$$ 8 TeV data. Lastly, the results are consistent with standard model predictions and constraints on anomalous triple gauge couplings are obtained.« less

First-principles study of roles of Cu and Cl in polycrystalline CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang

2016-01-25

In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

First-principles study of roles of Cu and Cl in polycrystalline CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt

2016-01-28

Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to staymore » at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

Water-soluble CdTe nanocrystals under high pressure

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng

2015-02-01

The application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NCs powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.

Massless Dirac fermions in semimetal HgCdTe

NASA Astrophysics Data System (ADS)

Marchewka, M.; Grendysa, J.; Żak, D.; Tomaka, G.; Śliż, P.; Sheregii, E. M.

2017-01-01

Magneto-transport results obtained for the strained 100 nm thick Hg1-x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated for topological protected surface states for the studied HgCdTe alloy corresponds to the fan of the LL's calculated using the graphen-like Hamiltonian which gives excellent agreement with the experimental data for velocity on the Fermi level equal to vf ≈ 0.85×106 m/s. That characterized strained Hg1-x CdxTe layers (0.13 < x < 0.14) are a perfect Topological Insulator with good perspectives of further applications.

An experimental analysis on OSPF-TE convergence time

NASA Astrophysics Data System (ADS)

Huang, S.; Kitayama, K.; Cugini, F.; Paolucci, F.; Giorgetti, A.; Valcarenghi, L.; Castoldi, P.

2008-11-01

Open shortest path first (OSPF) protocol is commonly used as an interior gateway protocol (IGP) in MPLS and generalized MPLS (GMPLS) networks to determine the topology over which label-switched paths (LSPs) can be established. Traffic-engineering extensions (network states such as link bandwidth information, available wavelengths, signal quality, etc) have been recently enabled in OSPF (henceforth, called OSPF-TE) to support shortest path first (SPF) tree calculation upon different purposes, thus possibly achieving optimal path computation and helping improve resource utilization efficiency. Adding these features into routing phase can exploit the OSPF robustness, and no additional network component is required to manage the traffic-engineering information. However, this traffic-engineering enhancement also complicates OSPF behavior. Since network states change frequently upon the dynamic trafficengineered LSP setup and release, the network is easily driven from a stable state to unstable operating regimes. In this paper, we focus on studying the OSPF-TE stability in terms of convergence time. Convergence time is referred to the time spent by the network to go back to steady states upon any network state change. An external observation method (based on black-box method) is employed to estimate the convergence time. Several experimental test-beds are developed to emulate dynamic LSP setup/release, re-routing upon single-link failure. The experimental results show that with OSPF-TE the network requires more time to converge compared to the conventional OSPF protocol without TE extension. Especially, in case of wavelength-routed optical network (WRON), introducing per wavelength availability and wavelength continuity constraint to OSPF-TE suffers severe convergence time and a large number of advertised link state advertisements (LSAs). Our study implies that long convergence time and large number of LSAs flooded in the network might cause scalability problems in OSPF-TE

Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swartz, Craig H.; Zaunbrecher, K. N.; Sohal, S.

2016-10-28

CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction inmore » electron capture cross section appeared at doping densities over 10 16cm -3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.« less

The possible magnetoelectric coupling induced by adsorption in SnTe films

NASA Astrophysics Data System (ADS)

Fu, Zhaoming; Liu, Meng; Zhang, Na; An, Yipeng; Yang, Zongxian

2018-01-01

Based on the recent discovery of the stable in-plane spontaneous polarization in SnTe films. We report the possible magnetoelectric (ME) coupling induced by adsorption in SnTe films by performing density functional calculations. Firstly, we investigate the adsorption-induced magnetic behaviors on the two-dimensional SnTe monolayer. Five kinds of adatoms (H, B, C, N and O) are taken into account. It is found that the SnTe with adsorbing H and B have nonzero magnetic moments and good stability. Secondly, the coexistence of the ferromagnetism and ferroelectrics (i.e. multiferroics) is observed in H-adsorbed SnTe. The magnetoelectric coupling in this system is studied by calculating the poralazition in different magnetic structures (antiferromagnetic and ferroelectric). According to our study, we propose that it is a possible method obtaining the multiferroicity and ME coupling to modify the SnTe films by chemical adsorption of single atoms.

NtWRKY-R1, a Novel Transcription Factor, Integrates IAA and JA Signal Pathway under Topping Damage Stress in Nicotiana tabacum

PubMed Central

Jin, Weihuan; Zhou, Qi; Wei, Yuanfang; Yang, Jinmiao; Hao, Fengsheng; Cheng, Zhipeng; Guo, Hongxiang; Liu, Weiqun

2018-01-01

Topping damage can induce the nicotine synthesis in tobacco roots, which involves the activation of JA and auxin signal transduction. It remains unclear how these hormone signals are integrated to regulate nicotine synthesis. Here we isolated a transcription factor NtWRKY-R1 from the group IIe of WRKY family and it had strong negative correlation with the expression of putrescine N-methyltransferase, the key enzyme of nicotine synthesis pathway. NtWRKY-R1 was specifically and highly expressed in tobacco roots, and it contains two transcriptional activity domains in the N- and C-terminal. The promoter region of NtWRKY-R1 contains two cis-elements which are responding to JA and auxin signals, respectively. Deletion of NtWRKY-R1 promoter showed that JA and auxin signals were subdued by NtWRKY-R1, and the expression of NtWRKY-R1 was more sensitive to auxin than JA. Furthermore, Yeast two-hybrid experiment demonstrated that NtWRKY-R1 can interact with the actin-binding protein. Our data showed that the intensity of JA and auxin signals can be translated into the expression of NtWRKY-R1, which regulates the balance of actin polymerization and depolymerization through binding actin-binding protein, and then regulates the expression of genes related to nicotine synthesis. The results will help us better understand the function of the WRKY-IIe family in the signaling crosstalk of JA and auxin under damage stress. PMID:29379516

Ionic-to-Electronic Conductivity Crossover in CdTe-AgI-As2Te3 Glasses: An 110mAg Tracer Diffusion Study.

PubMed

Kassem, M; Alekseev, I; Bokova, M; Le Coq, D; Bychkov, E

2018-04-12

Conductivity isotherms of (CdTe) x (AgI) 0.5- x/2 (As 2 Te 3 ) 0.5- x/2 glasses (0.0 ≤ x ≤ 0.15) reveal a nonmonotonic behavior with increasing CdTe content reminiscent of mixed cation effect in oxide and chalcogenide glasses. Nevertheless, the apparent similarity appears to be partly incorrect. Using 110m Ag tracer diffusion measurements, we show that semiconducting CdTe additions produce a dual effect: (i) decreasing the Ag + ion transport by a factor of ≈200 with a simultaneous increase of the diffusion activation energy and (ii) increasing the electronic conductivity by 1.5 orders of magnitude. Consequently, the conductivity minimum at x = 0.05 reflects an ionic-to-electronic transport crossover; the silver-ion transport number decreases by 3 orders of magnitude with increasing x.

Power generation from nanostructured PbTe-based thermoelectrics: comprehensive development from materials to modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Xiaokai; Jood, Priyanka; Ohta, Michihiro

2016-01-01

In this work, we demonstrate the use of high performance nanostructured PbTe-based materials in high conversion efficiency thermoelectric modules. We fabricated the samples of PbTe-2% MgTe doped with 4% Na and PbTe doped with 0.2% PbI2 with high thermoelectric figure of merit (ZT) and sintered them with Co-Fe diffusion barriers for use as p- and n-type thermoelectric legs, respectively. Transmission electron microscopy of the PbTe legs reveals two shapes of nanostructures, disk-like and spherical. The reduction in lattice thermal conductivity through nanostructuring gives a ZT of similar to 1.8 at 810 K for p-type PbTe and similar to 1.4 atmore » 750 K for n-type PbTe. Nanostructured PbTe-based module and segmented-leg module using Bi2Te3 and nanostructured PbTe were fabricated and tested with hot-side temperatures up to 873 K in a vacuum. The maximum conversion efficiency of similar to 8.8% for a temperature difference (Delta T) of 570 K and B11% for a Delta T of 590 K have been demonstrated in the nanostructured PbTe-based module and segmented Bi2Te3/nanostructured PbTe module, respectively. Three-dimensional finite-element simulations predict that the maximum conversion efficiency of the nanostructured PbTe-based module and segmented Bi2Te3/nanostructured PbTe module reaches 12.2% for a Delta T of 570 K and 15.6% for a Delta T of 590 K respectively, which could be achieved if the electrical and thermal contact between the nanostructured PbTe legs and Cu interconnecting electrodes is further improved.« less

Synthesis and characterization of colloidal ZnTe nanocrystals and ZnTe/ZnSe quantum dots

NASA Astrophysics Data System (ADS)

Gonzales, Gavin P.; Alas, Gema; Senthil, Arjun; Withers, Nathan J.; Minetos, Christina; Sandoval, Alejandro; Ivanov, Sergei A.; Smolyakov, Gennady A.; Huber, Dale L.; Osiński, Marek

2018-02-01

Quantum dots (QDs) emitting in the visible are of interest for many biomedical applications, including bioimaging, biosensing, drug targeting, and photodynamic therapy. However, a significant limitation is that QDs typically contain cadmium, which makes prospects for their FDA approval very unlikely. Previous work has focused on InP and ZnO as alternative semiconductor materials for QDs. However, these nanoparticles have also been shown to be cytotoxic. High-efficiency luminescent ZnTe-based QDs could be a reasonable alternative to Cd-containing QDs. In this paper, we present preliminary results of our recent studies of ZnTe-based QDs, including their synthesis, structural characterization, and optical properties.

HgCdTe Photoconductive Mixers for 2-8 THz

NASA Technical Reports Server (NTRS)

Betz, A. L.; Boreiko, R. T.; Sivananthan, S.; Ashokan, R.

2001-01-01

Heterodyne spectroscopy has been taken to wavelengths as short as 63 micrometers with Schottky-diode mixers. Schottkys, however, are relatively insensitive compared to superconducting mixers such as the hot-electron microbolometer (HEB), which has an effective quantum efficiency of 3% at 120 micrometers (2.5 THz). Although HEB sensitivities are bound to improve, there will always be losses associated with antenna coupling of radiation into sub-micron size devices. Another approach to far infrared (FIR) mixer design is to use a photoconductive device which can be made much larger than a wavelength, and thus act as its own antenna. For example, HgCdTe photodiodes have been used as mixers in the lambda = 10 micrometers band for over 25 years, with sensitivities now only a factor of 2 from the quantum-noise-limit. HgCdTe can also be applied at FIR wavelengths, but surprisingly little work has been done to date. The exception is the pioneering work of Spears and Kostiuk and Spears, who developed HgCdTe photomixers for the 20-120 micrometer region. The spectral versatility of the HgCdTe alloy is well recognized for wavelengths as long as 8-20 micrometers. What is not so recognized, however, is that theoretically there is no long wavelength limit for appropriately composited HgCdTe. Although Spears successfully demonstrated a photoconductive response from HgCdTe at 120 micrometers, this initial effort was apparently never followed up, in part because of the difficulty of controlling the HgCdTe alloy composition with liquid-phase-epitaxy (LPE) techniques. With the availability of precise molecular-beam-epitaxy (MBE) since the early 1990's, it is now appropriate to reconsider HgCdTe for detector applications longward of lambda = 20 micrometers. We recently initiated an effort to fabricate detectors and mixers using II-VI materials for FIR wavelengths. Of particular interest are device structures called superlattices, which offer a number of advantages for high sensitivity

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

NASA Astrophysics Data System (ADS)

Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

2016-07-01

Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

2016-05-01

NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costsmore » less than fossil fuels.« less

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Large cooling differentials and high heat flux capability with p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2SexTe3-x Superlattice Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Bulman, Gary; Siivola, Ed; Wiitala, Ryan; Grant, Brian; Pierce, Jonathan; Venkatasubramanian, Rama

2007-03-01

Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. Recently, we have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm^2. These high heat fluxes in thin film devices, while attractive for cooling hot-spots in electronics, also make the device performance sensitive to various thermal resistances in the device structure. We will discuss advances in the cooling performance of Bi2Te3-based SL TE devices and describe a method to extract device material parameters, including thermal resistance, from measurements of their δT-I-V characteristics. These parameters will be compared to values obtained through Hall and Seebeck coefficient measurement on epitaxial materials. Results will be presented for both single couple and multi-couple modules, as well as multi-stage cascaded devices made with these materials. Single stage cooling couples with δTmax of 57.8K (Tc˜242K) and multi-stage modules with δTmax˜92.2K (Tc˜209K) have been measured. G.E. Bulman, E. Siivola, B. Shen and R. Venkatasubramanian, Appl. Phys. Lett. 89, 122117 (2006).

Ferroelectric Properties of Mn-implanted CdTe

NASA Astrophysics Data System (ADS)

Fu, D. J.; Lee, J. C.; Lee, W. C.; Choi, S. W.; Lee, S. J.; Kang, T. W.

2005-06-01

We report a study of ferroelectricity in CdTe:Mn, which were prepared by implantation of CdTe wafers with 200-keV Mn ions to a dose of 5×1016 cm-2 and subsequently treated by rapid thermal annealing. An insulating layer was created by the implantation in the surface region of the samples. Ferroelectric characterization of the implanted sample revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of CdTe:Mn amounts to 0.64 μC/cm2 at 400 Hz. The polarization decreases with increasing temperature in a continuous and diffusive manner. Capacitance measurement demonstrated a maximum capacitance at 140°C, and fitting of the data with Curie-Weiss law shows the occurrence of a second-order type phase transition.

Preparing PNNL Reports with LaTeX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waichler, Scott R.

2005-06-01

LaTeX is a mature document preparation system that is the standard in many scientific and academic workplaces. It has been used extensively by scattered individuals and research groups within PNNL for years, but until now there have been no centralized or lab-focused resources to help authors and editors. PNNL authors and editors can produce correctly formatted PNNL or PNWD reports using the LaTeX document preparation system and the available template files. Please visit the PNNL-LaTeX Project (http://stidev.pnl.gov/resources/latex/, inside the PNNL firewall) for additional information and files. In LaTeX, document content is maintained separately from document structure for the most part.more » This means that the author can easily produce the same content in different formats and, more importantly, can focus on the content and write it in a plain text file that doesn't go awry, is easily transferable, and won't become obsolete due to software changes. LaTeX produces the finest print quality output; its typesetting is noticeably better than that of MS Word. This is particularly true for mathematics, tables, and other types of special text. Other benefits of LaTeX: easy handling of large numbers of figures and tables; automatic and error-free captioning, citation, cross-referencing, hyperlinking, and indexing; excellent published and online documentation; free or low-cost distributions for Windows/Linux/Unix/Mac OS X. This document serves two purposes: (1) it provides instructions to produce reports formatted to PNNL requirements using LaTeX, and (2) the document itself is in the form of a PNNL report, providing examples of many solved formatting challenges. Authors can use this document or its skeleton version (with formatting examples removed) as the starting point for their own reports. The pnnreport.cls class file and pnnl.bst bibliography style file contain the required formatting specifications for reports to the Department of Energy. Options are also

Thermoelectric properties of Te doped bulk Bi2Se3 system

NASA Astrophysics Data System (ADS)

Adam, A. M.; Elshafaie, A.; Mohamed, Abd El-Moez A.; Petkov, P.; Ibrahim, E. M. M.

2018-03-01

Polycrystalline bulk samples of Bi2(Se1‑xTex)3 system with x = 0.0–0.9 were prepared by the conventional melting method. Successfully and cheaply, Se atoms were replaced by Te atoms to get Bi2Se3-Bi2Te3 or even Bi2Te3 alone. Difference of mass and size between Te and Se atoms is expected to result in interesting properties in the Bi2(Se1‑xTex)3 system. All compounds showed a metal-semiconductor conductivity transition. The electrical conduction in the pristine Bi2Se3 compound increases with the low Te doping ratio (x = 0.3) then decreases monotonically for further amounts of Te. The Seebeck coefficient of Bi2Se3 compound is positive showing up a p-type conduction. However, introducing Te content increases the n-type conduction with a decrease in the Seebeck coefficient absolute value. In addition, Bi2Se3 compound is found to exhibit relatively high room temperature power factor and figure of merit values of 2.13 μW/m.k2. In an attempt to determine the figure of merit ZT, Bi2Se3 seems to be the best for room temperature, whereas, Te addition at high values makes the system just suitable for high temperature application.

SimulaTE: simulating complex landscapes of transposable elements of populations.

PubMed

Kofler, Robert

2018-04-15

Estimating the abundance of transposable elements (TEs) in populations (or tissues) promises to answer many open research questions. However, progress is hampered by the lack of concordance between different approaches for TE identification and thus potentially unreliable results. To address this problem, we developed SimulaTE a tool that generates TE landscapes for populations using a newly developed domain specific language (DSL). The simple syntax of our DSL allows for easily building even complex TE landscapes that have, for example, nested, truncated and highly diverged TE insertions. Reads may be simulated for the populations using different sequencing technologies (PacBio, Illumina paired-ends) and strategies (sequencing individuals and pooled populations). The comparison between the expected (i.e. simulated) and the observed results will guide researchers in finding the most suitable approach for a particular research question. SimulaTE is implemented in Python and available at https://sourceforge.net/projects/simulates/. Manual https://sourceforge.net/p/simulates/wiki/Home/#manual; Test data and tutorials https://sourceforge.net/p/simulates/wiki/Home/#walkthrough; Validation https://sourceforge.net/p/simulates/wiki/Home/#validation. robert.kofler@vetmeduni.ac.at.

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Perspective on the Cosmic-ray Electron Spectrum above TeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Kun; Wang, Bing-Bing; Bi, Xiao-Jun

2017-02-20

The AMS-02 has measured the cosmic-ray electron (plus positron) spectrum up to ∼TeV with unprecedented precision. The spectrum can be well described by a power law without any obvious features above 10 GeV. The satellite instrument Dark Matter Particle Explorer (DAMPE), which was launched a year ago, will measure the electron spectrum up to 10 TeV with high-energy resolution. The cosmic electrons beyond TeV may be attributed to few local cosmic-ray sources, such as supernova remnants. Therefore, spectral features, such as cut-off and bumps, can be expected at high energies. In this work, we provide a careful study on themore » perspective of the electron spectrum beyond TeV. We first examine our astrophysical source models on the latest leptonic data of AMS-02 to give a self-consistent picture. Then we focus on the discussion about the candidate sources, which could be electron contributors above TeV. Depending on the properties of the local sources (especially on the nature of Vela), DAMPE may detect interesting features in the electron spectrum above TeV in the future.« less

Electrodeposition of MWNT/Bi2Te3 Composite Thermoelectric Films

NASA Astrophysics Data System (ADS)

Xu, Han; Wang, Wei

2013-07-01

The effect of multiwalled carbon nanotubes (MWNTs) on the electrochemical behavior of the Bi-Te binary system in nitric acid baths was investigated by means of cyclic voltammetry and electrochemical impedance spectroscopy. Based on the results, MWNT/Bi2Te3 composite thermoelectric films were prepared by potentiostatic electrodeposition at room temperature. The morphology, composition, and structure of the MWNT/Bi2Te3 composite films were analyzed by environmental scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction. The results show that addition of MWNTs to the electrolyte did not change the electrochemical reduction mechanisms of Bi3+, HTeO{2/+} or their mixture, but the reduction processes of Bi3+, HTeO{2/+}, and their mixture become easier. MWNT/Bi2Te3 composite thermoelectric films can be obtained by potentiostatic electrodeposition at a wide range of potentials with subsequent annealing. The MWNTs in the films act as nucleation sites for Bi2Te3 compound and thereby elevate the film deposition rate. The content of Bi element and MWNTs in the films increased as the potential was shifted negatively. In addition, the MWNTs can enhance the crystallization of Bi2Te3 film.

Transcriptome Analysis of ABA/JA-Dual Responsive Genes in Rice Shoot and Root.

PubMed

Kim, Jin-Ae; Bhatnagar, Nikita; Kwon, Soon Jae; Min, Myung Ki; Moon, Seok-Jun; Yoon, In Sun; Kwon, Taek-Ryoun; Kim, Sun Tae; Kim, Beom-Gi

2018-01-01

The phytohormone abscisic acid (ABA) enables plants to adapt to adverse environmental conditions through the modulation of metabolic pathways and of growth and developmental programs. We used comparative microarray analysis to identify genes exhibiting ABA-dependent expression and other hormone-dependent expression among them in Oryza sativa shoot and root. We identified 854 genes as significantly up- or down-regulated in root or shoot under ABA treatment condition. Most of these genes had similar expression profiles in root and shoot under ABA treatment condition, whereas 86 genes displayed opposite expression responses in root and shoot. To examine the crosstalk between ABA and other hormones, we compared the expression profiles of the ABA-dependently regulated genes under several different hormone treatment conditions. Interestingly, around half of the ABA-dependently expressed genes were also regulated by jasmonic acid based on microarray data analysis. We searched the promoter regions of these genes for cis-elements that could be responsible for their responsiveness to both hormones, and found that ABRE and MYC2 elements, among others, were common to the promoters of genes that were regulated by both ABA and JA. These results show that ABA and JA might have common gene expression regulation system and might explain why the JA could function for both abiotic and biotic stress tolerance.

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing, Guangzong; Sun, Jifeng; Li, Yuwei

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Topological characters in Fe (Te1 -xSex ) thin films

NASA Astrophysics Data System (ADS)

Wu, Xianxin; Qin, Shengshan; Liang, Yi; Fan, Heng; Hu, Jiangping

2016-03-01

We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe1 -xSex has nontrivial Z2 topological invariance which originates from the parity exchange at the Γ point of the Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the anion height, which can be realized as the function of lattice constants and x in FeTe1 -xSex , can drive a topological phase transition. In a bulk material, the two-dimensional Z2 topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance oscillates with the number of layers. The results can also be applied to iron pnictides. Our research establishes FeTe1 -xSex as a unique system to integrate high-Tc superconductivity and topological properties in a single electronic structure.

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE PAGES

Xing, Guangzong; Sun, Jifeng; Li, Yuwei; ...

2018-05-21

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Spatial luminescence imaging of dopant incorporation in CdTe Films

DOE PAGES

Guthrey, Harvey; Moseley, John; Colegrove, Eric; ...

2017-01-25

State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. Furthermore, the image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

Effect of Sn addition on glassy Si-Te bulk sample

NASA Astrophysics Data System (ADS)

Babanna, Jagannatha K.; Roy, Diptoshi; Varma, Sreevidya G.; Asokan, Sundarrajan; Das, Chandasree

2018-05-01

Bulk Si20Te79Sn1 glass is prepared by melt-quenching method, amorphous nature of the as-quenched glass is confirmed by XRD. I-V characteristics reveals that Si20Te79Sn1 bulk sample exhibits threshold type electrical switching behavior. The thermal parameters such as crystallization temperature, glass transition temperature are obtained using differential scanning calorimetry. The crystalline peak study of the sample annealed at crystallization temperature for 2 hr shows that the Sn atom interact with Si or Te but do not interact with the Si-Te matrix in a greater extent and it forms a separate phase network individually.

Heterojunctions of model CdTe/CdSe mixtures

DOE PAGES

van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; ...

2015-03-18

We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

Choice of Substrate Material for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2015-06-14

Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

Identification of Zn vacancies in ZnTe doped with Cl and I

NASA Astrophysics Data System (ADS)

Asoka-Kumar, Palakkal; Alatalo, Matti; Wang, Wen

1997-03-01

The doping difficulties of II-VI semiconductors are well known. For example, ZnTe can be doped easily to have p-type conductivity but not n-type. We examined Cl and I doped ZnTe using positron annihilation spectroscopy to understand the role of vacancies in the compensation mechanism. The annihilation line shapes from inner-shell electrons can be used for elemental identification[1]. Results from ZnTe:Cl and ZnTe:I show an enhancement of annihilations with Te electrons compared to undoped samples, and is explained as arising due to first neighbor of a Zn vacancy. Theoretical calculations of the annihilation line shapes from bulk ZnTe and Zn and Te vacancies will also be presented. This work was supported in part by the US DOE under contract No. DE-AC02-76CH00016. [1] P. Asoka-Kumar, M. Alatalo, V.J. Ghosh, A.C. Kruseman, B. Nielsen, and K.G. Lynn, Phys. Rev. Lett. Vol. 77, 2097 (1996).

Integrated metabolomic and proteomic analysis reveals systemic responses of Rubrivivax benzoatilyticus JA2 to aniline stress.

PubMed

Mujahid, Md; Prasuna, M Lakshmi; Sasikala, Ch; Ramana, Ch Venkata

2015-02-06

Aromatic amines are widely distributed in the environment and are major environmental pollutants. Although degradation of aromatic amines is well studied in bacteria, physiological adaptations and stress response to these toxic compounds is not yet fully understood. In the present study, systemic responses of Rubrivivax benzoatilyticus JA2 to aniline stress were deciphered using metabolite and iTRAQ-labeled protein profiling. Strain JA2 tolerated high concentrations of aniline (30 mM) with trace amounts of aniline being transformed to acetanilide. GC-MS metabolite profiling revealed aniline stress phenotype wherein amino acid, carbohydrate, fatty acid, nitrogen metabolisms, and TCA (tricarboxylic acid cycle) were modulated. Strain JA2 responded to aniline by remodeling the proteome, and cellular functions, such as signaling, transcription, translation, stress tolerance, transport and carbohydrate metabolism, were highly modulated. Key adaptive responses, such as transcription/translational changes, molecular chaperones to control protein folding, and efflux pumps implicated in solvent extrusion, were induced in response to aniline stress. Proteo-metabolomics indicated extensive rewiring of metabolism to aniline. TCA cycle and amino acid catabolism were down-regulated while gluconeogenesis and pentose phosphate pathways were up-regulated, leading to the synthesis of extracellular polymeric substances. Furthermore, increased saturated fatty acid ratios in membranes due to aniline stress suggest membrane adaptation. The present study thus indicates that strain JA2 employs multilayered responses: stress response, toxic compound tolerance, energy conservation, and metabolic rearrangements to aniline.

Stable Te isotope fractionation in tellurium-bearing minerals from precious metal hydrothermal ore deposits

NASA Astrophysics Data System (ADS)

Fornadel, Andrew P.; Spry, Paul G.; Haghnegahdar, Mojhgan A.; Schauble, Edwin A.; Jackson, Simon E.; Mills, Stuart J.

2017-04-01

The tellurium isotope compositions of naturally-occurring tellurides, native tellurium, and tellurites were measured by multicollector-inductively coupled plasma-mass spectrometry (MC-ICP-MS) and compared to theoretical values for equilibrium mass-dependent isotopic fractionation of representative Te-bearing species estimated with first-principles thermodynamic calculations. Calculated fractionation models suggest that 130/125Te fractionations as large as 4‰ occur at 100 °C between coexisting tellurates (Te VI) and tellurides (Te -II) or or native tellurium Te(0), and smaller, typically <1‰, fractionations occur between coexisting Te(-I) or Te(-II) (Au,Ag)Te2 minerals (i.e., calaverite, krennerite) and (Au,Ag)2Te minerals (i.e., petzite, hessite). In general, heavyTe/lightTe is predicted to be higher for more oxidized species, and lower for reduced species. Tellurides in the system Au-Ag-Te and native tellurium analyzed in this study have values of δ130/125Te = -1.54‰ to 0.44‰ and δ130/125Te = -0.74‰ to 0.16‰, respectively, whereas those for tellurites (tellurite, paratellurite, emmonsite and poughite) range from δ130/125Te = -1.58‰ to 0.59‰. Thus, the isotopic composition for both oxidized and reduced species are broadly coincident. Calculations of per mil isotopic variation per amu for each sample suggest that mass-dependent processes are responsible for fractionation. In one sample of coexisting primary native tellurium and secondary emmonsite, δ130/125Te compositions were identical. The coincidence of δ130/125Te between all oxidized and reduced species in this study and the apparent lack of isotopic fractionation between native tellurium and emmonsite in one sample suggest that oxidation processes cause little to no fractionation. Because Te is predominantly transported as an oxidized aqueous phase or as a reduced vapor phase under hydrothermal conditions, either a reduction of oxidized Te in hydrothermal liquids or deposition of Te from a

Thermal expansion and specific heat of Cr2TeO6 and Fe2TeO6 by first principles calculations

NASA Astrophysics Data System (ADS)

Mishra, Vinayak

2018-05-01

Cr2TeO6 and Fe2TeO6 crystallize in tetragonal structure. These compounds are formed in nuclear reactors. Therefore, study of thermal expansion of these compounds is important. In this paper, using WIEN2k code we have calculated the volume dependent total energies E(V) of these materials at zero kelvin. Subsequently, we have applied the quasi harmonic approximation, in order to include the thermal effects. Using our calculations, we have predicted the thermal expansion and specific heat at high temperatures. The calculated properties for Fe2TeO6 are in very good agreement with the reported experimental results.

Characterization of HgCdTe and Related Materials For Third Generation Infrared Detectors

NASA Astrophysics Data System (ADS)

Vaghayenegar, Majid

Hg1-xCdxTe (MCT) has historically been the primary material used for infrared detectors. Recently, alternative substrates for MCT growth such as Si, as well as alternative infrared materials such as Hg1-xCdxSe, have been explored. This dissertation involves characterization of Hg-based infrared materials for third generation infrared detectors using a wide range of transmission electron microscopy (TEM) techniques. A microstructural study on HgCdTe/CdTe heterostructures grown by MBE on Si (211) substrates showed a thin ZnTe layer grown between CdTe and Si to mediate the large lattice mismatch of 19.5%. Observations showed large dislocation densities at the CdTe/ZnTe/Si (211) interfaces, which dropped off rapidly away from the interface. Growth of a thin HgTe buffer layer between HgCdTe and CdTe layers seemed to improve the HgCdTe layer quality by blocking some defects. A second study investigated the correlation of etch pits and dislocations in as-grown and thermal-cycle-annealed (TCA) HgCdTe (211) films. For as-grown samples, pits with triangular and fish-eye shapes were associated with Frank partial and perfect dislocations, respectively. Skew pits were determined to have a more complex nature. TCA reduced the etch-pit density by 72%. Although TCA processing eliminated the fish-eye pits, dislocations reappeared in shorter segments in the TCA samples. Large pits were observed in both as-grown and TCA samples, but the nature of any defects associated with these pits in the as-grown samples is unclear. Microstructural studies of HgCdSe revealed large dislocation density at ZnTe/Si(211) interfaces, which dropped off markedly with ZnTe thickness. Atomic-resolution STEM images showed that the large lattice mismatch at the ZnTe/Si interface was accommodated through {111}-type stacking faults. A detailed analysis showed that the stacking faults were inclined at angles of 19.5 and 90 degrees at both ZnTe/Si and HgCdSe/ZnTe interfaces. These stacking faults were associated

Multiwavelength observations of the TeV binary LS I +61° 303 with Veritas, Fermi-LAT, and Swift/xrt during a TeV outburst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aliu, E.; Archambault, S.; Behera, B.

2013-12-10

We present the results of a multiwavelength observational campaign on the TeV binary system LS I +61° 303 with the VERITAS telescope array (>200 GeV), Fermi-LAT (0.3-300 GeV), and Swift/XRT (2-10 keV). The data were taken from 2011 December through 2012 January and show a strong detection in all three wavebands. During this period VERITAS obtained 24.9 hr of quality selected livetime data in which LS I +61° 303 was detected at a statistical significance of 11.9σ. These TeV observations show evidence for nightly variability in the TeV regime at a post-trial significance of 3.6σ. The combination of the simultaneouslymore » obtained TeV and X-ray fluxes do not demonstrate any evidence for a correlation between emission in the two bands. For the first time since the launch of the Fermi satellite in 2008, this TeV detection allows the construction of a detailed MeV-TeV spectral energy distribution from LS I +61° 303. This spectrum shows a distinct cutoff in emission near 4 GeV, with emission seen by the VERITAS observations following a simple power-law above 200 GeV. This feature in the spectrum of LS I +61° 303, obtained from overlapping observations with Fermi-LAT and VERITAS, may indicate that there are two distinct populations of accelerated particles producing the GeV and TeV emission.« less

MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

DTIC Science & Technology

1987-06-30

metal lattice sites using the liquid phase epitaxy. However, group V elements have not been successfully Incorporated Into MBE grown HgCdTe layer as...narrow-gap side was first Both groups used the liquid pweepitaxy (LPE) growth made with a thicknem of 2 to 3/pm before the growth condi- technique and...higher quasiequilibrium pressure than with the shutter opened. This study shows that with the particular geometry 27 used the time constant required

Effect of Cr contents on the diffusion behavior of Te in Ni-based alloy

NASA Astrophysics Data System (ADS)

Jia, Yanyan; Li, Zhefu; Ye, Xiangxi; Liu, Renduo; Leng, Bin; Qiu, Jie; Liu, Min; Li, Zhijun

2017-12-01

The embrittlement of Ni-based structural alloys caused by fission production Te is one of the major challenges for molten salt reactors. It has been reported that solution element Cr can prevent the situation of intergranular cracks caused by Te. However, there is no detailed mechanism explanation on this phenomenon. In this study, the effect of Cr on Te diffusion in Ni-Cr binary system was investigated by diffusion experiments at 800 °C for 100 h. Results show that Te reacts with the alloy mainly forming Ni3Te2, and strip shaped Cr3Te4 is only found on the surface of Ni-15%Cr alloy. According to the discussion of thermodynamic chemical reaction process, Cr3Te4 exhibits the best stability and preferential formation compound in Te/Ni-Cr system as its Gibbs free energy of formation is the lowest. With the increase of Cr content in the alloy, the diffusion depth of Te along grain boundaries significantly decreases. Moreover, the formation process of reaction product and diffusion process are described. The diffusion of Te can be suppressed by high content of Cr in Ni-Cr alloy due to the formation of Cr3Te4 and thus the grain boundary is protected from Te corroding.

Viscosity Relaxation in Molten HgZnTe

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Kim, Yeong Woo; Baird, James K.; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Rotating cup measurements of the viscosity of the pseudo-binary melt, HgZnTe have shown that the isothermal liquid with zinc mole fraction 0.16 requires tens of hours of equilibration time before a steady viscous state can be achieved. Over this relaxation period, the viscosity at 790 C increases by a factor of two, while the viscosity at 810 C increases by 40%. Noting that the Group VI elements tend to polymerize when molten, we suggest that the viscosity of the melt is enhanced by the slow formation of Te atom chains. To explain the build-up of linear Te n-mers, we propose a scheme, which contains formation reactions with second order kinetics that increase the molecular weight, and decomposition reactions with first order kinetics that inactivate the chains. The resulting rate equations can be solved for the time dependence of each molecular weight fraction. Using these molecular weight fractions, we calculate the time dependence of the average molecular weight. Using the standard semi-empirical relation between polymer average molecular weight and viscosity, we then calculate the viscosity relaxation curve. By curve fitting, we find that the data imply that the rate constant for n-mer formation is much smaller than the rate constant for n-mer deactivation, suggesting that Te atoms only weakly polymerize in molten HgZnTe. The steady state toward which the melt relaxes occurs as the rate of formation of an n-mer becomes exactly balanced by the sum of the rate for its deactivation and the rate for its polymerization to form an (n+1)-mer.

Synthesis and superconductivity of In-doped SnTe nanostructures

DOE PAGES

Kumaravadivel, Piranavan; Pan, Grace A.; Zhou, Yu; ...

2017-07-01

In xSn 1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize In xSn 1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absencemore » of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of In xSn 1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications« less

Synthesis and superconductivity of In-doped SnTe nanostructures

NASA Astrophysics Data System (ADS)

Kumaravadivel, Piranavan; Pan, Grace A.; Zhou, Yu; Xie, Yujun; Liu, Pengzi; Cha, Judy J.

2017-07-01

InxSn1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications.

Effect of Ag doping and annealing on thermoelectric properties of PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bala, Manju, E-mail: Manjubala474@gmail.com; Tripathi, T. S.; Avasthi, D. K.

2015-06-24

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

Trace copper measurements and electrical effects in LPE HgCdTe

NASA Astrophysics Data System (ADS)

Tower, J. P.; Tobin, S. P.; Norton, P. W.; Bollong, A. B.; Socha, A.; Tregilgas, J. H.; Ard, C. K.; Arlinghaus, H. F.

1996-08-01

Recent improvements in sputter initiated resonance ionization spectroscopy (SIRIS) have now made it possible to measure copper in HgCdTe films into the low 1013 cm-3 range. We have used this technique to show that copper is responsible for type conversion in n-type HgCdTe films. Good n-type LPE films were found to have less than 1 x 1014 cm-3 copper, while converted p-type samples were found to have copper concentrations approximately equal to the hole concentrations. Some compensated n-type samples with low mobilities have copper concentrations too low to account for the amount of compensation and the presence of a deep acceptor level is suggested. In order to study diffusion of copper from substrates into LPE layers, a CdTe boule was grown intentionally spiked with copper at approximately 3 x 1016 cm-3. Annealing HgCdTe films at 360°C was found to greatly increase the amount of copper that diffuses out of the substrates and a substrate screening technique was developed based on this phenomenon. SIRIS depth profiles showed much greater copper in HgCdTe films than in the substrates, indicating that copper is preferentially attracted to HgCdTe over Cd(Zn)Te. SIRIS spatial mapping showed that copper is concentrated in substrate tellurium inclusions 5 25 times greater than in the surrounding CdZnTe matrix.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

PubMed

Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

2016-12-01

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Jacobs, R. N.; Stoltz, A. J.; Benson, J. D.; Smith, P.; Lennon, C. M.; Almeida, L. A.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Salmon, M.; Zu, J.

2013-11-01

Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high-definition formats on large-area substrates such as Si or GaAs. However, heteroepitaxial growth on these substrates is plagued by high densities of lattice-mismatch-induced threading dislocations (TDs) that ultimately reduce IRFPA operability. Previously we demonstrated a postgrowth technique with the potential to eliminate or move TDs such that they have less impact on detector operability. In this technique, highly reticulated mesa structures are produced in as-grown HgCdTe epilayers, and then subjected to thermal cycle annealing. To fully exploit this technique, better understanding of the inherent mechanism is required. In this work, we employ scanning transmission electron microscopy (STEM) analysis of HgCdTe/CdTe/Si(211) samples prepared by focused ion beam milling. A key factor is the use of defect-decorated samples, which allows for a correlation of etch pits observed on the surface with underlying dislocation segments viewed in cross-section STEM images. We perform an analysis of these dislocations in terms of the general distribution, density, and mobility at various locations within the mesa structures. Based on our observations, we suggest factors that contribute to the underlying mechanism for dislocation gettering.

The microstructure and composition of equilibrium phases formed in hypoeutectic Te-In alloy during solidification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Baoguang

As a key tellurium atoms evaporation source for ultraviolet detection photocathode, the hypoeutectic Te{sub 75}In{sub 25} alloy was prepared by employing a slow solidification speed of about 10{sup −2} K/s. The microstructure and chemical composition of the equilibrium phases formed in the as-prepared alloy were studied in this research work. The experimental results show that the as-prepared Te-In alloy was constituted by primary In{sub 2}Te{sub 5} phase and eutectic In{sub 2}Te{sub 5}/Te phases. The eutectic In{sub 2}Te{sub 5}/Te phases are distributed in the grain boundaries of primary In{sub 2}Te{sub 5} phase. With the slow solidification speed, a pure eutectic Temore » phase without any excessive indium solute was obtained, where Te content of eutectic Te phase is 100 mass%. Moreover, it can be considered that the stress between the In{sub 2}Te{sub 5} and Te phases plays an important role in reducing the tellurium vapor pressure in Te{sub 75}In{sub 25} alloy. - Highlights: • The microstructure of Te-In alloy as an evaporation source was analyzed. • A pure eutectic Te phase was obtained by using a slow solidification speed method. • The relation between vapor pressure and inner-stress in the alloy was discussed.« less

Emitter Choice for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2016-11-21

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current andmore » lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.« less

JaK/STAT Inhibition to Prevent Post-Traumatic Epileptogenesis

DTIC Science & Technology

2013-07-31

months 22-28) 2i. Assess mossy fiber sprouting, cell loss and glial proliferation 10 weeks post injury using Timm and Nissl staining (40 mice...1e. Assess protein levels and regional/cellular expression of JaK1 and 2, pSTAT1-5 using fluorescent immunohistochemistry with co- staining for cell...treated with CCI, 10 of which were treated with WP1066. Early post-injury experiments are underway; Timm staining has not revealed mossy fiber

Performance Analysis and Discussion on the Thermoelectric Element Footprint for PV-TE Maximum Power Generation

NASA Astrophysics Data System (ADS)

Li, Guiqiang; Zhao, Xudong; Jin, Yi; Chen, Xiao; Ji, Jie; Shittu, Samson

2018-06-01

Geometrical optimisation is a valuable way to improve the efficiency of a thermoelectric element (TE). In a hybrid photovoltaic-thermoelectric (PV-TE) system, the photovoltaic (PV) and thermoelectric (TE) components have a relatively complex relationship; their individual effects mean that geometrical optimisation of the TE element alone may not be sufficient to optimize the entire PV-TE hybrid system. In this paper, we introduce a parametric optimisation of the geometry of the thermoelectric element footprint for a PV-TE system. A uni-couple TE model was built for the PV-TE using the finite element method and temperature-dependent thermoelectric material properties. Two types of PV cells were investigated in this paper and the performance of PV-TE with different lengths of TE elements and different footprint areas was analysed. The outcome showed that no matter the TE element's length and the footprint areas, the maximum power output occurs when A n /A p = 1. This finding is useful, as it provides a reference whenever PV-TE optimisation is investigated.

Elastic proton-proton scattering at 13 TeV

NASA Astrophysics Data System (ADS)

Khoze, V. A.; Martin, A. D.; Ryskin, M. G.

2018-02-01

The predictions of a model which was tuned in 2013 to describe the elastic and diffractive p p - and/or p p ¯-data at collider energies up to 7 TeV are compared with the new 13 TeV TOTEM results. The possibility of the presence of an odd-signature Odderon exchange contribution is discussed.

A Direct TeX-to-Braille Transcribing Method

ERIC Educational Resources Information Center

Papasalouros, Andreas; Tsolomitis, Antonis

2017-01-01

The TeX/LaTeX typesetting system is the most wide-spread system for creating documents in Mathematics and Science. However, no reliable tool exists to this day for automatically transcribing documents from the above formats into Braille/Nemeth code. Thus, visually impaired students of related fields do not have access to the bulk of study material…

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

OsMPK3 positively regulates the JA signaling pathway and plant resistance to a chewing herbivore in rice.

PubMed

Wang, Qi; Li, Jiancai; Hu, Lingfei; Zhang, Tongfang; Zhang, Guren; Lou, Yonggen

2013-07-01

KEY MESSAGE : Silencing OsMPK3 decreased elicited JA levels, which subsequently reduced levels of herbivore-induced trypsin protease inhibitors (TrypPIs) and improved the performance of SSB larvae, but did not influence BPH. Mitogen-activated protein kinases (MPKs) are known to play an important role in plant defense by transferring biotic and abiotic signals into programmed cellular responses. However, their functions in the herbivore-induced defense response in rice remain largely unknown. Here, we identified a MPK3 gene from rice, OsMPK3, and found that its expression levels were up-regulated in response to infestation by the larvae of the striped stem borer (SSB) (Chilo suppressalis), to mechanical wounding and to treatment with jasmonic acid (JA), but not to infestation by the brown planthopper (BPH) Nilaparvata lugens or to treatment with salicylic acid. Moreover, mechanical wounding and SSB infestation induced the expression of OsMPK3 strongly and quickly, whereas JA treatment induced the gene more weakly and slowly. Silencing OsMPK3 (ir-mpk3) reduced the expression of the gene by 50-70 %, decreased elicited levels of JA and diminished the expression of a lipoxygenase gene OsHI-LOX and an allene oxide synthase gene OsAOS1. The reduced JA signaling in ir-mpk3 plants decreased the levels of herbivore-induced trypsin protease inhibitors (TrypPIs) and improved the performance of SSB larvae, but did not influence BPH. Our findings suggest that the gene OsMPK3 responds early in herbivore-induced defense and can be regulated by rice plants to activate a specific and appropriate defense response to different herbivores.

Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization

DOE PAGES

Amarasinghe, Mahisha; Colegrove, Eric; Moutinho, Helio; ...

2018-01-23

Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl 2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl 2more » temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl 2 treatment.« less

Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amarasinghe, Mahisha; Colegrove, Eric; Moutinho, Helio

Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl 2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl 2more » temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl 2 treatment.« less

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

NASA Astrophysics Data System (ADS)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

Synthesis, crystal structures and luminescence properties of the Eu 3+-doped yttrium oxotellurates(IV) Y 2Te 4O 11 and Y 2Te 5O 13

NASA Astrophysics Data System (ADS)

Höss, Patrick; Osvet, Andres; Meister, Frank; Batentschuk, Miroslaw; Winnacker, Albrecht; Schleid, Thomas

2008-10-01

Y 2Te 4O 11:Eu 3+ and Y 2Te 5O 13:Eu 3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y 2O 3, Eu 2O 3 and TeO 2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y 2Te 4O 11 and Y 2Te 5O 13 have been determined and refined from single-crystal X-ray diffraction data. In Y 2Te 4O 11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO 8] 13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y 2Te 5O 13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu 3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu 3+ cations have been interpreted in consideration of the now accessible detailed crystallographic data of the yttrium compounds, providing the possibility to examine the influence of the local symmetry of the oxygen coordination spheres.

Ion-beam treatment to prepare surfaces of p-CdTe films

DOEpatents

Gessert, Timothy A.

2001-01-01

A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Ordered CdTe/CdS Arrays for High-Performance Solar Cells

NASA Astrophysics Data System (ADS)

Zubía, David; López, Cesar; Rodríguez, Mario; Escobedo, Arev; Oyer, Sandra; Romo, Luis; Rogers, Scott; Quiñónez, Stella; McClure, John

2007-12-01

The deposition of uniform arrays of CdTe/CdS heterostructures suitable for solar cells via close-spaced sublimation is presented. The approach used to create the arrays consists of two basic steps: the deposition of a patterned growth mask on CdS, and the selective-area deposition of CdTe. CdTe grains grow selectively on the CdS but not on the SiO2 due to the differential surface mobility between the two surfaces. Furthermore, the CdTe mesas mimic the size and shape of the window opening in the SiO2. Measurements of the current density in the CdTe were high at 28 mA/cm2. To our knowledge, this is the highest reported current density for these devices. This implies that either the quantum efficiency is very high or the electrons generated throughout the CdTe are being concentrated by the patterned structure analogous to solar concentration. The enhancement in crystal uniformity and the relatively unexplored current concentration phenomenon could lead to significant performance improvements.

Pressure driven topological semi metallic phase in SrTe

NASA Astrophysics Data System (ADS)

Kunduru, Lavanya; Roshan, S. C. Rakesh; Yedukondalu, N.; Sainath, M.

2018-05-01

We have investigated the structural, electronic properties and Fermi surface topology of SrTe under high pressure up to 50 GPa based on density functional theory calculations. We predict that SrTe undergoes a structural phase transition from NaCl (B1) to CsCl (B2)-type structure at 14.7 GPa which is consistent with the experimental observations as well as with previous theoretical studies. The ambient (B1) and high pressure (B2) phases are found to be indirect band gap semiconductors and upon further compression B2 phase turns into a nontrivial topological semimetal. Interestingly, we have observed that B2 phase of SrTe has band inversion at Γ and M symmetry directions which lead to formation of 3D topological nodal line semimetal at high pressure which is analogous to CaTe and Cu3PdN due to nontrivial band topology.

Mechanically reliable thermoelectric (TE) nanocomposites by dispersing and embedding TE-nanostructures inside a tetragonal ZrO2 matrix: the concept and experimental demonstration in graphene oxide–3YSZ system

PubMed Central

Estili, Mehdi; Wu, Wen-Wen; Khazaei, Mohammad; Sakka, Yoshio

2014-01-01

Novel low-dimensional thermoelectric (TE) materials suffer from poor mechanical reliability, which limits their applications, especially in mechanically harsh environments. Here, we propose a new concept, in which the novel, abundant, thermally stable TE-nanostructures are dispersed and then intimately embedded inside a protective, mechanically reliable tetragonal ZrO2 (TZP) ceramic matrix with a low thermal conductivity. We also demonstrate an experimental proof-of-principle verification of our concept in reduced-graphene oxide (GO)–3 mol% Y2O3–ZrO2 (3YSZ or 3Y-TZP) nanocomposite system. TE characterizations suggest that our protective TZP matrix does not degrade the intrinsic TE property of the reduced GO network. These preliminary results are promising and encouraging to start research on similar TZP-matrix TE-nanocomposites, which contain more effective TE-nanostructures with larger intrinsic power factors. In this regard, we propose a scalable approach for fabrication of similar dense TE-nanocomposites composed of other one-dimensional and/or two-dimensional TE-nanostructures, which involves an aqueous colloidal approach and a subsequent spark plasma sintering. These new TZP-matrix TE-nanocomposites could be used for sustainable clean power generation, especially in mechanically harsh environments with thermal/mechanical shocks and vibrations, where energy availability, reliability and durability are more important than the energy efficiency. Considering the excellent biocompatibility of TZP matrix, they could even be used inside the body to power implanted medical devices. PMID:27877628

Mechanically reliable thermoelectric (TE) nanocomposites by dispersing and embedding TE-nanostructures inside a tetragonal ZrO2 matrix: the concept and experimental demonstration in graphene oxide-3YSZ system

NASA Astrophysics Data System (ADS)

Estili, Mehdi; Wu, Wen-Wen; Khazaei, Mohammad; Sakka, Yoshio

2014-02-01

Novel low-dimensional thermoelectric (TE) materials suffer from poor mechanical reliability, which limits their applications, especially in mechanically harsh environments. Here, we propose a new concept, in which the novel, abundant, thermally stable TE-nanostructures are dispersed and then intimately embedded inside a protective, mechanically reliable tetragonal ZrO2 (TZP) ceramic matrix with a low thermal conductivity. We also demonstrate an experimental proof-of-principle verification of our concept in reduced-graphene oxide (GO)-3 mol% Y2O3-ZrO2 (3YSZ or 3Y-TZP) nanocomposite system. TE characterizations suggest that our protective TZP matrix does not degrade the intrinsic TE property of the reduced GO network. These preliminary results are promising and encouraging to start research on similar TZP-matrix TE-nanocomposites, which contain more effective TE-nanostructures with larger intrinsic power factors. In this regard, we propose a scalable approach for fabrication of similar dense TE-nanocomposites composed of other one-dimensional and/or two-dimensional TE-nanostructures, which involves an aqueous colloidal approach and a subsequent spark plasma sintering. These new TZP-matrix TE-nanocomposites could be used for sustainable clean power generation, especially in mechanically harsh environments with thermal/mechanical shocks and vibrations, where energy availability, reliability and durability are more important than the energy efficiency. Considering the excellent biocompatibility of TZP matrix, they could even be used inside the body to power implanted medical devices.

Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

NASA Astrophysics Data System (ADS)

Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

2016-05-01

In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

Effect of TE Mode Power on the PEP II LER BPM System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, Cho-K

2011-08-26

The beam chamber of the PEP-II B-Factory Low Energy Ring (LER) arc sections is connected to an antechamber for the absorption of synchrotron radiation on discrete photon stops. The presence of the antechamber substantially reduces the cutoff frequency of the vacuum chamber and, in particular, allows the propagation of higher-order-mode (HOM) TE power generated by beamline components at the BPM signal processing frequency. Calculations of the transmission properties of the TE mode in different sections of the vacuum chamber show that the power is trapped between widely separated bellows in the arc sections. Because of the narrow signal bandwidth andmore » weak coupling of the TE mode to the BPM buttons, the noise contributed by the HOM TE power will not produce a noticeable effect on the BPM position signal voltage. The LER arc vacuum chamber employs an antechamber with a discrete photon stop for absorption of synchrotron radiation and with pumps for maintaining pressure below 10 nTorr [1]. The horizontal dimensions of the antechambers at the pumping chamber section and the magnet chamber section are larger or comparable to that of the beam chamber. Because of the increase in the horizontal dimension, the cutoff frequency of the TE10-like mode (in rectangular coordinates) of the vacuum chamber is considerably reduced and, in particular, is less than the BPM signal processing frequency at 952 MHz. TE power propagating in the vacuum chamber will penetrate through the BPM buttons and will affect the pickup signal if its magnitude is not properly controlled. It is the purpose of this note to clarify various issues pertaining to this problem. TE power is generated when the beam passes a noncylindrically symmetric beamline component such as the RF cavity, the injection region, the IR crotch and the IP region. The beampipes connected to these components have TE cutoff frequencies greater than 952 MHz (for example, the TE cutoff frequency of the RF cavity beampipe is 1

Initial performance studies of a general-purpose detector for multi-TeV physics at a 100 TeV pp collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chekanov, S. V.; Beydler, M.; Kotwal, A. V.

This paper describes simulations of detector response to multi-TeV physics at the Future Circular Collider (FCC-hh) or Super proton-proton Collider (SppC) which aim to collide proton beams with a centre-of-mass energy of 100 TeV. The unprecedented energy regime of these future experiments imposes new requirements on detector technologies which can be studied using the detailed geant4 simulations presented in this paper. The initial performance of a detector designed for physics studies at the FCC-hh or SppC experiments are described with an emphasis on measurements of single particles up to 33 TeV in transverse momentum. Furthermore, the granularity requirements for calorimetrymore » are investigated using the two-particle spatial resolution achieved for hadron showers.« less

Initial performance studies of a general-purpose detector for multi-TeV physics at a 100 TeV pp collider

DOE PAGES

Chekanov, S. V.; Beydler, M.; Kotwal, A. V.; ...

2017-06-13

This paper describes simulations of detector response to multi-TeV physics at the Future Circular Collider (FCC-hh) or Super proton-proton Collider (SppC) which aim to collide proton beams with a centre-of-mass energy of 100 TeV. The unprecedented energy regime of these future experiments imposes new requirements on detector technologies which can be studied using the detailed geant4 simulations presented in this paper. The initial performance of a detector designed for physics studies at the FCC-hh or SppC experiments are described with an emphasis on measurements of single particles up to 33 TeV in transverse momentum. Furthermore, the granularity requirements for calorimetrymore » are investigated using the two-particle spatial resolution achieved for hadron showers.« less

Influence of nanoscale Ag2Te precipitates on the thermoelectric properties of the Sn doped P-type AgSbTe2 compound

NASA Astrophysics Data System (ADS)

Mohanraman, Rajeshkumar; Sankar, Raman; Chou, Fang-Cheng; Lee, Chih-Hao; Iizuka, Yoshiyuki; Muthuselvam, I. Panneer; Chen, Yang-Yuan

2014-09-01

We report a maximal figure of merit (ZT) value of 1.1 at 600 K was obtained for the sample of which x = 0.03, representing an enhancement greater than 20% compared with a pristine AgSbTe2 sample. This favorable thermoelectric performance originated from the optimal Sn2+ substitution for Sb3+ in AgSbTe2, which not only increased electrical conductivity but also led to a substantial reduction in thermal conductivity that was likely caused by an enhanced phonon-scattering mechanism through the combined effects of lattice defects and the presence of Ag2Te nanoprecipitates dispersed in the matrix.

Structural, electronic, magnetic and optical properties of semiconductor Zn1-xMoxTe compound

NASA Astrophysics Data System (ADS)

Feng, Zhong-Ying; Zhang, Jian-Min

2018-03-01

The structural, electronic, magnetic and optical properties of the Zn1-xMoxTe (x = 0.00, 0.25, 0.50, 0.75, 1.00) have been investigated by the spin-polarized first-principles calculations. The Zn0.50Mo0.50Te has tetragonal structure while the Zn1-xMoxTe (x = 0.00, 0.25, 0.75, 1.00) crystallize in cubic structures. For Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) alloys, the lattice constant and the volume are found larger than those of pure ZnTe alloy. The Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) is magnetic and the Mo element is found dominant in the bands crossing the Fermi level in the spin-up channel. The Zn0.75Mo0.25Te and MoTe have half-metallic (HM) behavior. In spin-down channel of the Zn0.75Mo0.25Te, the Zn atom mainly contributed to the conduction band minimum (CBM), while the valence band maximum (VBM) appears mainly due to contribution of Te element. A positive spin splitting and crystal field splitting of d-states of Mo atom has been observed for Zn0.75Mo0.25Te alloy. The maximum values of the absorption coefficients αMAX(ω) of the Zn0.50Mo0.50Te alloy along a or b axes are smaller than the absorption coefficient along c axis. The first absorption peak appearing in the energy range of 0.000-1.000 eV for Zn1-xMoxTe (x = 0.25, 0.50, 0.75 or 1.00) alloys is the new peak which is not observed in ZnTe.

Vapor-Phase Stoichiometry and Heat Treatment of CdTe Starting Material for Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao; Lehoczky, S. L.; Liu, Hao-Chieh; Fang, Rei; Brebrick, R. F.

1998-01-01

Six batches of CdTe, having total amounts of material from 99 to 203 g and gross mole fraction of Te, X(sub Te), 0.499954-0.500138, were synthesized from pure Cd and Te elements. The vapor-phase stoichiometry of the assynthesized CdTe batches was determined from the partial pressure of Te2, P(sub Te2) using an optical absorption technique. The measured vapor compositions at 870 C were Te-rich for all of the batches with partial pressure ratios of Cd to Te2, P(sub Cd)/P(sub Te2), ranging from 0.00742 to 1.92. After the heat treatment of baking under dynamic vacuum at 870 C for 8 min, the vapor-phase compositions moved toward that of the congruent sublimation, i.e. P(sub Cd)/P(sub Te2) = 2.0, with the measured P(sub Cd)/P(sub Te2) varying from 1.84 to 3.47. The partial pressure measurements on one of the heat-treated samples also showed that the sample remained close to the congruent sublimation condition over the temperature range 800-880 C.

Properties of young pulsar wind nebulae: TeV detectability and pulsar properties

NASA Astrophysics Data System (ADS)

Tanaka, Shuta J.; Takahara, Fumio

2013-03-01

Among dozens of young pulsar wind nebulae (PWNe), some have been detected in TeV γ-rays (TeV PWNe), while others have not (non-TeV PWNe). The TeV emission detectability is not correlated with either the spin-down power or the characteristic age of the central pulsars and it is an open question as to what determines the detectability. To study this problem, we investigate the spectral evolution of five young non-TeV PWNe: 3C 58, G310.6-1.6, G292.0+1.8, G11.2-0.3 and SNR B0540-69.3. We use a spectral evolution model that was developed in our previous works to be applied to young TeV PWNe. The TeV γ-ray flux upper limits of non-TeV PWNe give upper or lower limits on parameters such as the age of the PWN and the fraction of spin-down power going into magnetic energy injection (the fraction parameter). Combined with other independent observational and theoretical studies, we can guess a plausible value of the parameters for each object. For 3C 58, we prefer parameters with an age of 2.5 kyr and fraction parameter of 3.0 × 10-3, although the spectral modelling alone does not rule out a lower age and a higher fraction parameter. The fraction parameter of 3.0 × 10-3 is also consistent for other non-TeV PWNe and thus the value is regarded as common to young PWNe, including TeV PWNe. Moreover, we find that the intrinsic properties of the central pulsars are similar: 1048-50 erg for the initial rotational energy and 1042-44 erg for the magnetic energy (2 × 1012-3 × 1013 G for the dipole magnetic field strength at the surface). The TeV detectability is correlated with the total injected energy and the energy density of the interstellar radiation field around PWNe. Except for the case of G292.0+1.8, broken power-law injection of the particles reproduces the broad-band emission from non-TeV PWNe well.

Theoretical investigation on thermodynamic properties of ZnO1-x Te x alloys

NASA Astrophysics Data System (ADS)

Long, Debing; Li, Mingkai; Luo, Minghai; Zhu, Jiakun; Yang, Hui; Huang, Zhongbing; Ahuja, Rajeev; He, Yunbin

2017-05-01

In this study, the formation energy, phase diagram (with/without phonon contribution) and the relationship between bond stiffness and bond length for wurtzite (WZ) and zincblende (ZB) structures of ZnO1-x Te x (0  ⩽  x  ⩽  1) alloys have been investigated by combining first-principles calculations and cluster expansion method. The formation energy of ZnO1-x Te x alloys is very high in both structures, which means that it is difficult for ZnO and ZnTe to form stable ternary alloys ZnO1-x Te x . In the phase diagrams, both structures do not have stable phase of ternary alloys and ZnO1-x Te x ternary alloys can only exist in the form of metastable phase. These results indicate that ZnO and ZnTe easily form solid solubility gap when they form alloys. After considering vibrational free energy, we found the solubility of Te in ZnO and O in ZnTe was increased and the vibrational entropy improved the solubility furthermore. The phonon contribution is not ignorable to improve solid solubility. The phonon density of states was analyzed for ZnO1-x Te x alloys and the contribution from vibrational entropy was discussed.

Index matching of TE and TM modes in organic multilayer waveguides

NASA Astrophysics Data System (ADS)

Thompson, Jonathan; Schmitzer, Heidrun; Wagner, Hans Peter

We investigate transverse electric (TE) and magnetic (TM) mode propagation in organic multilayers consisting of aluminum quinoline (Alq3) and perylenetetracarboxylic dianhydride (PTCDA). In particular, we analyze two multilayer waveguides, Alq3-PTCDA-Alq3 and PTCDA-Alq3-PTCDA, engineered to give index matching according to modeling. The waveguides were grown on a glass substrate via organic molecular beam deposition. Fabry-Perot oscillations observed from reflection measurements were used to confirm the individual layer thicknesses. We were able to observe refractive index matching between TE0 and TE1, as well as TE2 and TE3 modes for the PTCDA-Alq3-PTCDA waveguide due to the light propagation through the top and bottom PTCDA layers, respectively. In addition, we were able to match TE1 and TM1, as well as TE3 and TM3 modes in the Alq3-PTCDA-Alq3 multilayer due to the birefringence of the PTCDA layer. Furthermore, we are able to create mode matching for a range of wavelengths due to the similar effective refractive index dispersion of different waveguide modes. The ability to phase match different waveguide modes opens a wide range of potential applications including polarization-insensitive propagation and mode switching by adding a thin magnetic metal film within the waveguide and applying an external magnetic field.

CdZnTe Background Measurements at Balloon Altitudes with PoRTIA

NASA Technical Reports Server (NTRS)

Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C. M.; Tueller, J.; Teegarden, B.

2003-01-01

Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS Nal anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of Nal. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn and Te nuclei that radiatively decay; calculations are presented that indicate that these decays may explain most of the fully shielded CdZnTe background.

Semiconductor-to-metal phase change in MoTe2 layers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Davydov, Albert V.; Krylyuk, Sergiy; Kalish, Irina; Meshi, Louisa; Beams, Ryan; Kalanyan, Berc; Sharma, Deepak K.; Beck, Megan; Bergeron, Hadallia; Hersam, Mark C.

2016-09-01

Molybdenum ditelluride (MoTe2), which can exist in a semiconducting prismatic hexagonal (2H) or a metallic distorted octahedral (1T') phases, is one of the very few materials that exhibit metal-semiconductor transition. Temperature-driven 2H - 1T' phase transition in bulk MoTe2 occurs at high temperatures (above 900 °C) and it is usually accompanied by Te loss. The latter can exacerbate the control over reversibility of the phase transition. Here, we study effects of high-temperature annealing on phase transition in MoTe2 single crystals. First, MoTe2 were grown in sealed evacuated quartz ampoules from polycrystalline MoTe2 powder in an iodine-assisted chemical vapor transport process at 1000 °C. The 2H and 1T' phases were stabilized by controlling the cooling rate after the growth. In particular, slow cooling at 10 °C/h rate yielded the 2H phase whereas the 1T' phase was stabilized by ice-water quenching. Next, the phase conversion was achieved by annealing MoTe2 single crystals in vacuum-sealed ampoules at 1000 °C with or without additional poly-MoTe2 powder followed by fast or slow cooling. Similarly to the CVT growth, slow cooling and quenching consistently produced 2H and 1T' phases, respectively, regardless of the initial MoTe2 crystal structure. We will discuss structural and optical properties of the as-grown and phase-converted MoTe2 single crystals using TEM, SEM/EDS, XRD, XPS and Raman. Electrical characteristics of two-terminal devices made from metallic 1T' and bottom-gated FETs made from 2H exfoliated crystals will also be presented.

Studies on interface between In2O3 and CuInTe2 thin films

NASA Astrophysics Data System (ADS)

Ananthan, M. R.; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-10-01

Interface between dc sputtered In2O3 and stepwise flash evaporated CuInTe2 films were studied by probing Si/In2O3/CuInTe2 and Si/CuInTe2/In2O3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In2O3/CuInTe2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In2O3 and CuInTe2 and was attributed to the diffusion of Cu from CuInTe2 into In2O3 film. On the other hand, in Si/CuInTe2/In2O3 structure, homogeneity of the underlying CuInTe2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe2 film during the growth of In2O3 film on Si/CuInTe2.

Point defects in Cd(Zn)Te and TlBr: Theory

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo

2013-09-01

The effects of various crystal defects on the performances of CdTe, CdZnxTe (CZT), and TlBr for room-temperature high-energy radiation detection are examined using first-principles theoretical methods. The predictive, parameter-free, atomistic approaches used provide fundamental understanding of defect properties that are difficult to measure and also allow rapid screening of possibilities for material engineering, such as optimal doping and annealing conditions. Several recent examples from the author's work are reviewed, including: (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties in CZT; (iii) point defect diffusion and binding leading to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects—principally vacancies—on the intrinsic material properties of TlBr, particularly its electronic and ionic conductivity; and (v) a study on doping TlBr to independently control the electronic and ionic conductivity.

Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

PubMed

Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

2017-06-01

In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

(Cd,Zn,Mg)Te-based microcavity on MgTe sacrificial buffer: Growth, lift-off, and transmission studies of polaritons

NASA Astrophysics Data System (ADS)

Seredyński, B.; Król, M.; Starzyk, P.; Mirek, R.; Ściesiek, M.; Sobczak, K.; Borysiuk, J.; Stephan, D.; Rousset, J.-G.; Szczytko, J.; Pietka, B.; Pacuski, W.

2018-04-01

Opaque substrates precluded, so far, transmission studies of II-VI semiconductor microcavities. This work presents the design and molecular beam epitaxy growth of semimagnetic (Cd,Zn,Mn)Te quantum wells embedded into a (Cd,Zn,Mg)Te-based microcavity, which can be easily separated from the GaAs substrate. Our lift-off process relies on the use of a MgTe sacrificial layer which stratifies in contact with water. This allowed us to achieve a II-VI microcavity prepared for transmission measurements. We evidence the strong light-matter coupling regime using photoluminescence, reflectivity, and transmission measurements at the same spot on the sample. By comparing a series of reflectance spectra before and after lift-off, we prove that the microcavity quality remains high. Thanks to Mn content in quantum wells we show the giant Zeeman splitting of semimagnetic exciton-polaritons in our transmitting structure.

Properties Of Passivant Films On HgCdTe - Interaction With The Substrate

NASA Astrophysics Data System (ADS)

Davis, G. D.; Sun, T. S.; Buchner, S. P.; Byer, N. E.

1981-12-01

Two commonly used passivants of Hg0.8Cd0.2Te, the anodic oxide and ZnS, have been studied by x-ray photoelectron spectroscopy combined with ion sputtering. Chemical depth profiles of anodic oxide films of 360 to 1600 A showed that the oxide composition is constant with depth and independent of oxide thickness. Chemical shifts and line shape analysis of the Cd M45N45N45 Auger transition in the oxide, CdO, Cd(OH)2, and CdTeO3 demonstrate that CdTeO3 is the major constituent of the anodic oxide. The oxide composi-tion is interpreted as 44% CdTeO3, 29% CdTe2O5, 17% HgTeO3, and 10% HgTe2O5. Anodization of HgCdTe depletes the semiconductor of 30% - 40% of its Hg near the interface. The spatial extent of this Hg depletion is a function of oxide thickness for thin oxides (<1000 A) but is a constant (150-200 A) for thick films. No significant change in the Cd concentration is seen. A ZnS film deposited on a chemically etched sample forms a graded interface of a (ZnHgCd)Te alloy. In this case, no Hg depletion is seen. Deposi-tion of ZnS on an anodized substrate in high vacuum leads to a reaction of the Zn with the residual 02 in the chamber to form ZnO on the anodic oxide before the ZnS. The ZnO then diffuses throughout the anodic oxide.

Corrosion Behavior of Bi2Te3-Based Thermoelectric Materials Fabricated by Melting Method

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2017-05-01

Bi2Te3-based compounds are used practically as thermoelectric cooling materials. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudobinary system compounds are usually applied as p- or n-type material, respectively. Atmospheric water may condense on the surface of thermoelectric materials constituting Peltier modules, depending on their operating environment. Very few studies on the corrosion resistance of Bi2Te3-based compounds have been reported in literature. Moreover, the detailed corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the corrosion behavior of cleavage planes of Bi2Te3-based compounds fabricated by a melting method has been investigated. Bi2Te3, Sb2Te3, and Bi2Se3 were prepared by the vertical Bridgman method, respectively. Their electrochemical properties evaluated at room temperature by cyclic voltammetry in a standard three-electrode cell with naturally aerated 0.6 mass% or 3.0 mass% NaCl solution as working electrolyte. The c-planes of Bi2Te3 and Sb2Te3 exhibited similar corrosion potential. The corrosion potential of c-plane of Bi2Se3 was more cathodic compared with that of the telluride. The passive current density of the Bi2Te3-based compounds was single or double digit lower than that of stainless steel. X-ray photoelectron spectroscopy results for the electrolyte after testing indicated the possibility that a corrosion product diffuses to the environment including NaCl for Sb2Te3 and Bi2Se3.

MoTe2: An uncompensated semimetal with extremely large magnetoresistance

NASA Astrophysics Data System (ADS)

Thirupathaiah, S.; Jha, Rajveer; Pal, Banabir; Matias, J. S.; Das, P. Kumar; Sivakumar, P. K.; Vobornik, I.; Plumb, N. C.; Shi, M.; Ribeiro, R. A.; Sarma, D. D.

2017-06-01

Transition-metal dichalcogenides (WTe2 and MoTe2) have recently drawn much attention, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe2 and MoTe2 the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe2, while it is yet to be clear in the case of MoTe2 which has an identical crystal structure of WTe2 at low temperatures. In this Rapid Communication, we report low-energy electronic structure and Fermi surface topology of MoTe2 using angle-resolved photoemission spectrometry (ARPES) technique and first-principles calculations, and compare them with that of WTe2 to understand the mechanism of XMR. Our measurements demonstrate that MoTe2 is an uncompensated semimetal, contrary to WTe2 in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe2. In this context, we also discuss the applicability of other existing conjectures on the XMR of these compounds.

Liquidus Projections of Bi-Se-Ga and Bi-Se-Te Ternary Systems

NASA Astrophysics Data System (ADS)

Lin, Po-han; Chen, Sinn-wen; Hwang, Jenn-dong; Chu, Hsu-shen

2016-12-01

This study determines the liquidus projections of both Bi-Se-Ga and Bi-Se-Te ternary systems which are constituent ternary systems of promising Bi-Se-Te-Ga thermoelectric materials. Ternary Bi-Se-Ga and Bi-Se-Te alloys are prepared. Their primary solidification phases are experimentally determined, and thermal analysis experiments are carried out. The liquidus projections are determined based on the ternary experimental results and phase diagrams of constituent binary systems. The Bi-Se-Ga system includes seven primary solidification phases, Bi, Ga, GaSe, Ga2Se3, Se, Bi2Se3, and (Bi2)n(Bi2Se3)m. In the Bi-Se-Te system, there are five primary solidification phases, Bi, (Bi2)n(Bi2Te3)m, Bi2(Se,Te)3, (Se,Te), and (Bi2)n(Bi2Se3)m. Both the (Bi2)n(Bi2Te3)m and (Bi2)n(Bi2Se3)m phases are not a single phase, but a collection of series undetermined phases. Large miscibility gaps are observed in the Bi-Se-Ga system. The temperatures of the invariant reactions, Liquid + Bi + GaSe = Ga and Liquid + Ga2Se3 = Bi + GaSe, are at 495 K (222 °C) and 533 K (260 °C), respectively.

Electron microscopy of iron chalcogenide FeTe(Se) films

NASA Astrophysics Data System (ADS)

Shchichko, I. O.; Presnyakov, M. Yu.; Stepantsov, E. A.; Kazakov, S. M.; Antipov, E. V.; Makarova, I. P.; Vasil'ev, A. L.

2015-05-01

The structure of Fe1 + δTe1 - x Se x films ( x = 0; 0.05) grown on single-crystal MgO and LaAlO3 substrates has been investigated by transmission and scanning transmission electron microscopy. The study of Fe1.11Te/MgO structures has revealed two crystallographic orientation relationships between the film and substrate. It is shown that the lattice mismatch between the film and substrate is compensated for by the formation of misfit dislocations. The Burgers vector projection is determined. The stresses in the film can partially be compensated for due to the formation of an intermediate disordered layer. It is shown that a FeTe0.5Se0.5 film grown on a LaAlO3 substrate is single-crystal and that the FeTe0.5Se0.5/LaAlO3 interface in a selected region is coherent. The orientation relationships between the film and substrate are also determined for this case.

Growth, Crystal Structure, Theoretical Analysis and Properties of Te4+-Doped KTiOPO4

NASA Astrophysics Data System (ADS)

Liu, Lintao; Yao, Qian; Zhang, Junying; Dong, Weimin; Li, Jing; Wang, Jiyang; Boughton, Robert I.

2018-04-01

A single crystal of Te4+-doped KTiOPO4(Te:KTP) has been grown by the flux method. The electronic structure and density of states of KTiOPO4 (KTP) and Te:KTP were calculated from first principles. As the results reveal, there is no change in the space group or lattice structure of Te:KTP, but that some increase in lattice parameters occurred. The chemical composition of Te:KTP was analyzed using x-ray photoelectron spectroscopy (XPS). The possible existence of Ti3+ has been evaluated by measuring the electron paramagnetic resonance spectrum, and the results reveal that the ion is absent from this crystal. It was observed that Te4+ doping reduces the conductivity of the crystal from measurements of its conductivity at different temperatures and frequencies, indicating that Te:KTP has excellent electro-optical properties. The effect of Te4+ doping on the second harmonic generation in KTP was also studied. The thermal expansion, thermal diffusivity, thermal conductivity and specific heat capacity of KTP and Te:KTP were determined.

Synthesis of Large-area Crystalline MoTe2 Atomic layer from Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Zhou, Lin; Zubair, Ahmad; Xu, Kai; Kong, Jing; Dresselhaus, Mildred

The controlled synthesis of highly crystalline large-area molybdenum ditelluride MoTe2 atomic layers is crucial for the practical applications of this emerging material. Here we develop a novel approach for the growth of large-area, uniform and highly crystalline few-layer MoTe2 film via chemical vapour deposition (CVD). Large-area atomically thin MoTe2 film has been successfully synthesized by tellurization of a MoO3 film. The as-grown MoTe2 film is uniform, stoichiometric, and highly crystalline. As a result of the high crystallinity, the electronic properties of MoTe2 film are comparable with that of mechanically exfoliated MoTe2 flakes. Moreover, we found that two different phases of MoTe2 (2H and 1T') can be grown depending on the choice of Mo precursor. Since the MoTe2 film is highly homogenous, and the size of the film is only limited by the substrate and CVD system size, our growth method paves the way for large-scale application of MoTe2 in high performance nanoelectronics and optoelectronics.

Ion-beam-induced damage formation in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rischau, C. W.; Schnohr, C. S.; Wendler, E.

2011-06-01

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that themore » high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.« less

TRIM.FaTE Evaluation Report

EPA Pesticide Factsheets

The TRIM.FaTE Evaluation Report is composed of three volumes. Volume I presents conceptual, mechanistic, and structural complexity evaluations of various aspects of the model. Volumes II and III present performance evaluation.

MBE growth of few-layer 2H-MoTe2 on 3D substrates

NASA Astrophysics Data System (ADS)

Vishwanath, Suresh; Sundar, Aditya; Liu, Xinyu; Azcatl, Angelica; Lochocki, Edward; Woll, Arthur R.; Rouvimov, Sergei; Hwang, Wan Sik; Lu, Ning; Peng, Xin; Lien, Huai-Hsun; Weisenberger, John; McDonnell, Stephen; Kim, Moon J.; Dobrowolska, Margaret; Furdyna, Jacek K.; Shen, Kyle; Wallace, Robert M.; Jena, Debdeep; Xing, Huili Grace

2018-01-01

MoTe2 is the least explored material in the Molybdenum-chalcogen family. Molecular beam epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. We find that for a few-layer MoTe2 grown at a moderate rate of ∼6 min per monolayer, a narrow window in temperature (above Te cell temperature) and Te:Mo ratio exists, where we can obtain pure phase 2H-MoTe2. This is confirmed using reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). For growth on CaF2, Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of ∼90 Å and presence of twinned grains. In this work, we hypothesis the presence of excess Te incorporation in MBE grown few layer 2H-MoTe2. For film on CaF2, it is based on >2 Te:Mo stoichiometry using XPS as well as 'a' and 'c' lattice spacing greater than bulk 2H-MoTe2. On GaAs, its based on observations of Te crystallite formation on film surface, 2 × 2 superstructure observed in RHEED and low energy electron diffraction, larger than bulk c-lattice spacing as well as the lack of electrical conductivity modulation by field effect. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively.

[Oxidative damage effects induced by CdTe quantum dots in mice].

PubMed

Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

2017-07-20

Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P <0.05 or P <0.01) ; the activities GSH - Px in 50.0 and 500.0 nmol/ml CdTe QDs group were significantly higher than those of control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

History of HgTe-based photodetectors in Poland

NASA Astrophysics Data System (ADS)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Characterisation of Redlen high-flux CdZnTe

NASA Astrophysics Data System (ADS)

Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

2017-12-01

CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

Raman spectroscopic investigations of Hg-Cd-Te melts

NASA Technical Reports Server (NTRS)

Morrobel-Sosa, Anny

1987-01-01

Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.

Multi-TeV flaring from blazars: Markarian 421 as a case study

DOE PAGES

Sahu, Sarira; Miranda, Luis Salvador; Rajpoot, Subhash

2016-03-07

The TeV blazar Markarian 421 underwent multi-TeV flaring during April 2004 and simultaneously observations in the X-ray and TeV energies were made. It was observed that the TeV outbursts had no counterparts in the lower energy range. One implication of this is that it might be an orphan flare. We show that Fermi-accelerated protons of energy ≤168 TeV can interact with the low energy tail of the background synchrotron self-Compton photons in the inner region of the blazar to produce the multi-TeV flare and our results fit very well with the observed spectrum. Based on our study, we predict thatmore » the blazars with a deep valley in between the end of the synchrotron spectrum and the beginning of the SSC spectrum are possible candidates for orphan flaring. Future possible candidates for this scenario are the HBLs Mrk 501 and PG 1553 + 113 objects.« less

Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source

NASA Astrophysics Data System (ADS)

Iso, Kenji; Murakami, Hisashi; Koukitu, Akinori

2017-07-01

Thermodynamic analysis of CdTe growth using cost-effective metallic Cd and dialkyl telluride was performed. The major vapor species at source zone in equilibrium were gaseous Cd for the group-II precursor, and Te2 and H2Te for the group-VI precursors. The driving force for the CdTe deposition was still positive even at 650 °C. This indicates that CdTe formation from gaseous Cd can proceed thermodynamically. Furthermore, the calculations showed that CdTe decomposes at higher temperature and increasing the II/VI ratio increases the limit of the growth temperature, which coincides with the experimental results.

A novel binary Pt 3Te x/C nanocatalyst for ethanol electro-oxidation

NASA Astrophysics Data System (ADS)

Huang, Meihua; Wang, Fei; Li, Lirong; Guo, Yonglang

The Pt 3Te x/C nanocatalyst was prepared and its catalytic performance for ethanol oxidation was investigated for the first time. The Pt 3Te/C nanoparticles were characterized by an X-ray diffractometer (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy equipped with TEM (TEM-EDX). The Pt 3Te/C catalyst has a typical fcc structure of platinum alloys with the presence of Te. Its particle size is about 2.8 nm. Among the synthesized catalysts with different atomic ratios, the Pt 3Te/C catalyst has the highest anodic peak current density. The cyclic voltammograms (CV) show that the anodic peak current density for the Pt 3Te/C, commercial PtRu/C and Pt/C catalysts reaches 1002, 832 and 533 A g -1, respectively. On the current-time curve, the anodic current on the Pt 3Te/C catalyst was higher than those for the catalysts reported. So, these findings show that the Pt 3Te/C catalyst has uniform nanoparticles and the best activity among the synthesized catalysts, and it is better than commercial PtRu/C and Pt/C catalysts for ethanol oxidation at room temperature.

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-02-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-06-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

Search for high-mass diphoton resonances in proton-proton collisions at 13 TeV and combination with 8 TeV search

NASA Astrophysics Data System (ADS)

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Asilar, E.; Bergauer, T.; Brandstetter, J.; Brondolin, E.; Dragicevic, M.; Erö, J.; Flechl, M.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Hartl, C.; Hörmann, N.; Hrubec, J.; Jeitler, M.; König, A.; Krätschmer, I.; Liko, D.; Matsushita, T.; Mikulec, I.; Rabady, D.; Rad, N.; Rahbaran, B.; Rohringer, H.; Schieck, J.; Strauss, J.; Waltenberger, W.; Wulz, C.-E.; Mossolov, V.; Shumeiko, N.; Suarez Gonzalez, J.; Dvornikov, O.; Makarenko, V.; Zykunov, V.; Alderweireldt, S.; De Wolf, E. A.; Janssen, X.; Lauwers, J.; Van De Klundert, M.; Van Haevermaet, H.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Abu Zeid, S.; Blekman, F.; D'Hondt, J.; Daci, N.; De Bruyn, I.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Doninck, W.; Van Mulders, P.; Van Parijs, I.; Brun, H.; Clerbaux, B.; De Lentdecker, G.; Delannoy, H.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Léonard, A.; Luetic, J.; Maerschalk, T.; Marinov, A.; Randle-conde, A.; Seva, T.; Vander Velde, C.; Vanlaer, P.; Vannerom, D.; Yonamine, R.; Zenoni, F.; Zhang, F.; Cimmino, A.; Cornelis, T.; Dobur, D.; Fagot, A.; Garcia, G.; Gul, M.; Khvastunov, I.; Poyraz, D.; Salva, S.; Schöfbeck, R.; Sharma, A.; Tytgat, M.; Van Driessche, W.; Yazgan, E.; Zaganidis, N.; Bakhshiansohi, H.; Beluffi, C.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; De Visscher, S.; Delaere, C.; Delcourt, M.; Francois, B.; Giammanco, A.; Jafari, A.; Jez, P.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Musich, M.; Nuttens, C.; Piotrzkowski, K.; Quertenmont, L.; Selvaggi, M.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Aldá Júnior, W. L.; Alves, F. L.; Alves, G. A.; Brito, L.; Hensel, C.; Moraes, A.; Pol, M. E.; Rebello Teles, P.; Belchior Batista Das Chagas, E.; Carvalho, W.; Chinellato, J.; Custódio, A.; Da Costa, E. M.; Da Silveira, G. G.; De Jesus Damiao, D.; De Oliveira Martins, C.; Fonseca De Souza, S.; Huertas Guativa, L. M.; Malbouisson, H.; Matos Figueiredo, D.; Mora Herrera, C.; Mundim, L.; Nogima, H.; Prado Da Silva, W. L.; Santoro, A.; Sznajder, A.; Tonelli Manganote, E. J.; Vilela Pereira, A.; Ahuja, S.; Bernardes, C. A.; Dogra, S.; Fernandez Perez Tomei, T. R.; Gregores, E. M.; Mercadante, P. G.; Moon, C. S.; Novaes, S. F.; Padula, Sandra S.; Romero Abad, D.; Ruiz Vargas, J. C.; Aleksandrov, A.; Hadjiiska, R.; Iaydjiev, P.; Rodozov, M.; Stoykova, S.; Sultanov, G.; Vutova, M.; Dimitrov, A.; Glushkov, I.; Litov, L.; Pavlov, B.; Petkov, P.; Fang, W.; Ahmad, M.; Bian, J. G.; Chen, G. M.; Chen, H. S.; Chen, M.; Chen, Y.; Cheng, T.; Jiang, C. H.; Leggat, D.; Liu, Z.; Romeo, F.; Shaheen, S. M.; Spiezia, A.; Tao, J.; Wang, C.; Wang, Z.; Zhang, H.; Zhao, J.; Ban, Y.; Chen, G.; Li, Q.; Liu, S.; Mao, Y.; Qian, S. J.; Wang, D.; Xu, Z.; Avila, C.; Cabrera, A.; Chaparro Sierra, L. F.; Florez, C.; Gomez, J. P.; González Hernández, C. F.; Ruiz Alvarez, J. D.; Sanabria, J. C.; Godinovic, N.; Lelas, D.; Puljak, I.; Ribeiro Cipriano, P. M.; Sculac, T.; Antunovic, Z.; Kovac, M.; Brigljevic, V.; Ferencek, D.; Kadija, K.; Micanovic, S.; Sudic, L.; Susa, T.; Attikis, A.; Mavromanolakis, G.; Mousa, J.; Nicolaou, C.; Ptochos, F.; Razis, P. A.; Rykaczewski, H.; Tsiakkouri, D.; Finger, M.; Finger, M.; Carrera Jarrin, E.; Abdelalim, A. A.; El-khateeb, E.; Salama, E.; Kadastik, M.; Murumaa, M.; Perrini, L.; Raidal, M.; Tiko, A.; Veelken, C.; Eerola, P.; Pekkanen, J.; Voutilainen, M.; Härkönen, J.; Järvinen, T.; Karimäki, V.; Kinnunen, R.; Lampén, T.; Lassila-Perini, K.; Lehti, S.; Lindén, T.; Luukka, P.; Tuominiemi, J.; Tuovinen, E.; Wendland, L.; Talvitie, J.; Tuuva, T.; Besancon, M.; Couderc, F.; Dejardin, M.; Denegri, D.; Fabbro, B.; Faure, J. L.; Favaro, C.; Ferri, F.; Ganjour, S.; Ghosh, S.; Givernaud, A.; Gras, P.; Hamel de Monchenault, G.; Jarry, P.; Kucher, I.; Locci, E.; Machet, M.; Malcles, J.; Rander, J.; Rosowsky, A.; Titov, M.; Zghiche, A.; Abdulsalam, A.; Antropov, I.; Baffioni, S.; Beaudette, F.; Busson, P.; Cadamuro, L.; Chapon, E.; Charlot, C.; Davignon, O.; Granier de Cassagnac, R.; Jo, M.; Lisniak, S.; Miné, P.; Nguyen, M.; Ochando, C.; Ortona, G.; Paganini, P.; Pigard, P.; Regnard, S.; Salerno, R.; Sirois, Y.; Strebler, T.; Yilmaz, Y.; Zabi, A.; Agram, J.-L.; Andrea, J.; Aubin, A.; Bloch, D.; Brom, J.-M.; Buttignol, M.; Chabert, E. C.; Chanon, N.; Collard, C.; Conte, E.; Coubez, X.; Fontaine, J.-C.; Gelé, D.; Goerlach, U.; Le Bihan, A.-C.; Skovpen, K.; Van Hove, P.; Gadrat, S.; Beauceron, S.; Bernet, C.; Boudoul, G.; Bouvier, E.; Carrillo Montoya, C. A.; Chierici, R.; Contardo, D.; Courbon, B.; Depasse, P.; El Mamouni, H.; Fan, J.; Fay, J.; Gascon, S.; Gouzevitch, M.; Grenier, G.; Ille, B.; Lagarde, F.; Laktineh, I. B.; Lethuillier, M.; Mirabito, L.; Pequegnot, A. L.; Perries, S.; Popov, A.; Sabes, D.; Sordini, V.; Vander Donckt, M.; Verdier, P.; Viret, S.; Toriashvili, T.; Tsamalaidze, Z.; Autermann, C.; Beranek, S.; Feld, L.; Heister, A.; Kiesel, M. K.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Preuten, M.; Raupach, F.; Schael, S.; Schomakers, C.; Schulz, J.; Verlage, T.; Weber, H.; Zhukov, V.; Albert, A.; Brodski, M.; Dietz-Laursonn, E.; Duchardt, D.; Endres, M.; Erdmann, M.; Erdweg, S.; Esch, T.; Fischer, R.; Güth, A.; Hamer, M.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Knutzen, S.; Merschmeyer, M.; Meyer, A.; Millet, P.; Mukherjee, S.; Olschewski, M.; Padeken, K.; Pook, T.; Radziej, M.; Reithler, H.; Rieger, M.; Scheuch, F.; Sonnenschein, L.; Teyssier, D.; Thüer, S.; Cherepanov, V.; Flügge, G.; Hoehle, F.; Kargoll, B.; Kress, T.; Künsken, A.; Lingemann, J.; Müller, T.; Nehrkorn, A.; Nowack, A.; Nugent, I. M.; Pistone, C.; Pooth, O.; Stahl, A.; Aldaya Martin, M.; Arndt, T.; Asawatangtrakuldee, C.; Beernaert, K.; Behnke, O.; Behrens, U.; Bin Anuar, A. A.; Borras, K.; Campbell, A.; Connor, P.; Contreras-Campana, C.; Costanza, F.; Diez Pardos, C.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Eren, E.; Gallo, E.; Garay Garcia, J.; Geiser, A.; Gizhko, A.; Grados Luyando, J. M.; Gunnellini, P.; Harb, A.; Hauk, J.; Hempel, M.; Jung, H.; Kalogeropoulos, A.; Karacheban, O.; Kasemann, M.; Keaveney, J.; Kleinwort, C.; Korol, I.; Krücker, D.; Lange, W.; Lelek, A.; Leonard, J.; Lipka, K.; Lobanov, A.; Lohmann, W.; Mankel, R.; Melzer-Pellmann, I.-A.; Meyer, A. B.; Mittag, G.; Mnich, J.; Mussgiller, A.; Ntomari, E.; Pitzl, D.; Placakyte, R.; Raspereza, A.; Roland, B.; Sahin, M. Ö.; Saxena, P.; Schoerner-Sadenius, T.; Seitz, C.; Spannagel, S.; Stefaniuk, N.; Van Onsem, G. P.; Walsh, R.; Wissing, C.; Blobel, V.; Centis Vignali, M.; Draeger, A. R.; Dreyer, T.; Garutti, E.; Gonzalez, D.; Haller, J.; Hoffmann, M.; Junkes, A.; Klanner, R.; Kogler, R.; Kovalchuk, N.; Lapsien, T.; Lenz, T.; Marchesini, I.; Marconi, D.; Meyer, M.; Niedziela, M.; Nowatschin, D.; Pantaleo, F.; Peiffer, T.; Perieanu, A.; Poehlsen, J.; Sander, C.; Scharf, C.; Schleper, P.; Schmidt, A.; Schumann, S.; Schwandt, J.; Stadie, H.; Steinbrück, G.; Stober, F. M.; Stöver, M.; Tholen, H.; Troendle, D.; Usai, E.; Vanelderen, L.; Vanhoefer, A.; Vormwald, B.; Akbiyik, M.; Barth, C.; Baur, S.; Baus, C.; Berger, J.; Butz, E.; Caspart, R.; Chwalek, T.; Colombo, F.; De Boer, W.; Dierlamm, A.; Fink, S.; Freund, B.; Friese, R.; Giffels, M.; Gilbert, A.; Goldenzweig, P.; Haitz, D.; Hartmann, F.; Heindl, S. M.; Husemann, U.; Katkov, I.; Kudella, S.; Lobelle Pardo, P.; Mildner, H.; Mozer, M. U.; Müller, Th.; Plagge, M.; Quast, G.; Rabbertz, K.; Röcker, S.; Roscher, F.; Schröder, M.; Shvetsov, I.; Sieber, G.; Simonis, H. J.; Ulrich, R.; Wagner-Kuhr, J.; Wayand, S.; Weber, M.; Weiler, T.; Williamson, S.; Wöhrmann, C.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Topsis-Giotis, I.; Kesisoglou, S.; Panagiotou, A.; Saoulidou, N.; Tziaferi, E.; Evangelou, I.; Flouris, G.; Foudas, C.; Kokkas, P.; Loukas, N.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Filipovic, N.; Bencze, G.; Hajdu, C.; Horvath, D.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Makovec, A.; Molnar, J.; Szillasi, Z.; Bartók, M.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Bahinipati, S.; Choudhury, S.; Mal, P.; Mandal, K.; Nayak, A.; Sahoo, D. K.; Sahoo, N.; Swain, S. K.; Bansal, S.; Beri, S. B.; Bhatnagar, V.; Chawla, R.; Bhawandeep, U.; Kalsi, A. K.; Kaur, A.; Kaur, M.; Kumar, R.; Kumari, P.; Mehta, A.; Mittal, M.; Singh, J. B.; Walia, G.; Kumar, Ashok; Bhardwaj, A.; Choudhary, B. C.; Garg, R. 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M.; Fahim, A.; Khakzad, M.; Mohammadi Najafabadi, M.; Naseri, M.; Paktinat Mehdiabadi, S.; Rezaei Hosseinabadi, F.; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Calabria, C.; Caputo, C.; Colaleo, A.; Creanza, D.; Cristella, L.; De Filippis, N.; De Palma, M.; Fiore, L.; Iaselli, G.; Maggi, G.; Maggi, M.; Miniello, G.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Ranieri, A.; Selvaggi, G.; Silvestris, L.; Venditti, R.; Verwilligen, P.; Abbiendi, G.; Battilana, C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Brigliadori, L.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Chhibra, S. S.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Rossi, A. M.; Rovelli, T.; Siroli, G. 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M.; Lanza, G.; Lista, L.; Meola, S.; Paolucci, P.; Sciacca, C.; Thyssen, F.; Azzi, P.; Bacchetta, N.; Benato, L.; Bisello, D.; Boletti, A.; Carlin, R.; Carvalho Antunes De Oliveira, A.; Checchia, P.; Dall'Osso, M.; De Castro Manzano, P.; Dorigo, T.; Dosselli, U.; Gasparini, F.; Gasparini, U.; Gozzelino, A.; Lacaprara, S.; Margoni, M.; Meneguzzo, A. T.; Pazzini, J.; Pozzobon, N.; Ronchese, P.; Simonetto, F.; Torassa, E.; Zanetti, M.; Zotto, P.; Zumerle, G.; Braghieri, A.; Magnani, A.; Montagna, P.; Ratti, S. P.; Re, V.; Riccardi, C.; Salvini, P.; Vai, I.; Vitulo, P.; Alunni Solestizi, L.; Bilei, G. M.; Ciangottini, D.; Fanò, L.; Lariccia, P.; Leonardi, R.; Mantovani, G.; Menichelli, M.; Saha, A.; Santocchia, A.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Bernardini, J.; Boccali, T.; Castaldi, R.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Martini, L.; Messineo, A.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Barone, L.; Cavallari, F.; Cipriani, M.; Del Re, D.; Diemoz, M.; Gelli, S.; Longo, E.; Margaroli, F.; Marzocchi, B.; Meridiani, P.; Organtini, G.; Paramatti, R.; Preiato, F.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bartosik, N.; Bellan, R.; Biino, C.; Cartiglia, N.; Cenna, F.; Costa, M.; Covarelli, R.; Degano, A.; Demaria, N.; Finco, L.; Kiani, B.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Monteil, E.; Monteno, M.; Obertino, M. M.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Pinna Angioni, G. L.; Ravera, F.; Romero, A.; Ruspa, M.; Sacchi, R.; Shchelina, K.; Sola, V.; Solano, A.; Staiano, A.; Traczyk, P.; Belforte, S.; Casarsa, M.; Cossutti, F.; Della Ricca, G.; Zanetti, A.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Lee, S.; Lee, S. W.; Oh, Y. D.; Sekmen, S.; Son, D. C.; Yang, Y. C.; Lee, A.; Kim, H.; Brochero Cifuentes, J. A.; Kim, T. J.; Cho, S.; Choi, S.; Go, Y.; Gyun, D.; Ha, S.; Hong, B.; Jo, Y.; Kim, Y.; Lee, B.; Lee, K.; Lee, K. S.; Lee, S.; Lim, J.; Park, S. K.; Roh, Y.; Almond, J.; Kim, J.; Lee, H.; Oh, S. B.; Radburn-Smith, B. C.; Seo, S. h.; Yang, U. K.; Yoo, H. D.; Yu, G. B.; Choi, M.; Kim, H.; Kim, J. H.; Lee, J. S. H.; Park, I. C.; Ryu, G.; Ryu, M. S.; Choi, Y.; Goh, J.; Hwang, C.; Lee, J.; Yu, I.; Dudenas, V.; Juodagalvis, A.; Vaitkus, J.; Ahmed, I.; Ibrahim, Z. A.; Komaragiri, J. R.; Md Ali, M. A. B.; Mohamad Idris, F.; Wan Abdullah, W. A. T.; Yusli, M. N.; Zolkapli, Z.; Castilla-Valdez, H.; De La Cruz-Burelo, E.; Heredia-De La Cruz, I.; Hernandez-Almada, A.; Lopez-Fernandez, R.; Magaña Villalba, R.; Mejia Guisao, J.; Sanchez-Hernandez, A.; Carrillo Moreno, S.; Oropeza Barrera, C.; Vazquez Valencia, F.; Carpinteyro, S.; Pedraza, I.; Salazar Ibarguen, H. A.; Uribe Estrada, C.; Morelos Pineda, A.; Krofcheck, D.; Butler, P. H.; Ahmad, A.; Ahmad, M.; Hassan, Q.; Hoorani, H. R.; Khan, W. A.; Saddique, A.; Shah, M. A.; Shoaib, M.; Waqas, M.; Bialkowska, H.; Bluj, M.; Boimska, B.; Frueboes, T.; Górski, M.; Kazana, M.; Nawrocki, K.; Romanowska-Rybinska, K.; Szleper, M.; Zalewski, P.; Bunkowski, K.; Byszuk, A.; Doroba, K.; Kalinowski, A.; Konecki, M.; Krolikowski, J.; Misiura, M.; Olszewski, M.; Walczak, M.; Bargassa, P.; Beirão Da Cruz E Silva, C.; Calpas, B.; Di Francesco, A.; Faccioli, P.; Ferreira Parracho, P. G.; Gallinaro, M.; Hollar, J.; Leonardo, N.; Lloret Iglesias, L.; Nemallapudi, M. 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P.; Flix, J.; Fouz, M. C.; Garcia-Abia, P.; Gonzalez Lopez, O.; Goy Lopez, S.; Hernandez, J. M.; Josa, M. I.; Navarro De Martino, E.; Pérez-Calero Yzquierdo, A.; Puerta Pelayo, J.; Quintario Olmeda, A.; Redondo, I.; Romero, L.; Soares, M. S.; de Trocóniz, J. F.; Missiroli, M.; Moran, D.; Cuevas, J.; Fernandez Menendez, J.; Gonzalez Caballero, I.; González Fernández, J. R.; Palencia Cortezon, E.; Sanchez Cruz, S.; Suárez Andrés, I.; Vizan Garcia, J. M.; Cabrillo, I. J.; Calderon, A.; Castiñeiras De Saa, J. R.; Curras, E.; Fernandez, M.; Garcia-Ferrero, J.; Gomez, G.; Lopez Virto, A.; Marco, J.; Martinez Rivero, C.; Matorras, F.; Piedra Gomez, J.; Rodrigo, T.; Ruiz-Jimeno, A.; Scodellaro, L.; Trevisani, N.; Vila, I.; Vilar Cortabitarte, R.; Abbaneo, D.; Auffray, E.; Auzinger, G.; Bachtis, M.; Baillon, P.; Ball, A. H.; Barney, D.; Bloch, P.; Bocci, A.; Bonato, A.; Botta, C.; Camporesi, T.; Castello, R.; Cepeda, M.; Cerminara, G.; D'Alfonso, M.; d'Enterria, D.; Dabrowski, A.; Daponte, V.; David, A.; De Gruttola, M.; De Roeck, A.; Di Marco, E.; Dobson, M.; Dorney, B.; du Pree, T.; Duggan, D.; Dünser, M.; Dupont, N.; Elliott-Peisert, A.; Fartoukh, S.; Franzoni, G.; Fulcher, J.; Funk, W.; Gigi, D.; Gill, K.; Girone, M.; Glege, F.; Gulhan, D.; Gundacker, S.; Guthoff, M.; Hammer, J.; Harris, P.; Hegeman, J.; Innocente, V.; Janot, P.; Kieseler, J.; Kirschenmann, H.; Knünz, V.; Kornmayer, A.; Kortelainen, M. J.; Kousouris, K.; Krammer, M.; Lange, C.; Lecoq, P.; Lourenço, C.; Lucchini, M. T.; Malgeri, L.; Mannelli, M.; Martelli, A.; Meijers, F.; Merlin, J. 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T.; Meister, D.; Micheli, F.; Musella, P.; Nessi-Tedaldi, F.; Pandolfi, F.; Pata, J.; Pauss, F.; Perrin, G.; Perrozzi, L.; Quittnat, M.; Rossini, M.; Schönenberger, M.; Starodumov, A.; Tavolaro, V. R.; Theofilatos, K.; Wallny, R.; Aarrestad, T. K.; Amsler, C.; Caminada, L.; Canelli, M. F.; De Cosa, A.; Galloni, C.; Hinzmann, A.; Hreus, T.; Kilminster, B.; Ngadiuba, J.; Pinna, D.; Rauco, G.; Robmann, P.; Salerno, D.; Yang, Y.; Zucchetta, A.; Candelise, V.; Doan, T. H.; Jain, Sh.; Khurana, R.; Konyushikhin, M.; Kuo, C. M.; Lin, W.; Lu, Y. J.; Pozdnyakov, A.; Yu, S. S.; Kumar, Arun; Chang, P.; Chang, Y. H.; Chang, Y. W.; Chao, Y.; Chen, K. F.; Chen, P. H.; Dietz, C.; Fiori, F.; Hou, W.-S.; Hsiung, Y.; Liu, Y. F.; Lu, R.-S.; Miñano Moya, M.; Paganis, E.; Psallidas, A.; Tsai, J. f.; Tzeng, Y. M.; Asavapibhop, B.; Singh, G.; Srimanobhas, N.; Suwonjandee, N.; Adiguzel, A.; Cerci, S.; Damarseckin, S.; Demiroglu, Z. S.; Dozen, C.; Dumanoglu, I.; Girgis, S.; Gokbulut, G.; Guler, Y.; Hos, I.; Kangal, E. E.; Kara, O.; Kayis Topaksu, A.; Kiminsu, U.; Oglakci, M.; Onengut, G.; Ozdemir, K.; Sunar Cerci, D.; Tali, B.; Turkcapar, S.; Zorbakir, I. S.; Zorbilmez, C.; Bilin, B.; Bilmis, S.; Isildak, B.; Karapinar, G.; Yalvac, M.; Zeyrek, M.; Gülmez, E.; Kaya, M.; Kaya, O.; Yetkin, E. A.; Yetkin, T.; Cakir, A.; Cankocak, K.; Sen, S.; Grynyov, B.; Levchuk, L.; Sorokin, P.; Aggleton, R.; Ball, F.; Beck, L.; Brooke, J. J.; Burns, D.; Clement, E.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Heath, G. P.; Heath, H. F.; Jacob, J.; Kreczko, L.; Lucas, C.; Newbold, D. M.; Paramesvaran, S.; Poll, A.; Sakuma, T.; Seif El Nasr-storey, S.; Smith, D.; Smith, V. J.; Bell, K. W.; Belyaev, A.; Brew, C.; Brown, R. M.; Calligaris, L.; Cieri, D.; Cockerill, D. J. A.; Coughlan, J. A.; Harder, K.; Harper, S.; Olaiya, E.; Petyt, D.; Shepherd-Themistocleous, C. H.; Thea, A.; Tomalin, I. R.; Williams, T.; Baber, M.; Bainbridge, R.; Buchmuller, O.; Bundock, A.; Burton, D.; Casasso, S.; Citron, M.; Colling, D.; Corpe, L.; Dauncey, P.; Davies, G.; De Wit, A.; Della Negra, M.; Di Maria, R.; Dunne, P.; Elwood, A.; Futyan, D.; Haddad, Y.; Hall, G.; Iles, G.; James, T.; Lane, R.; Laner, C.; Lucas, R.; Lyons, L.; Magnan, A.-M.; Malik, S.; Mastrolorenzo, L.; Nash, J.; Nikitenko, A.; Pela, J.; Penning, B.; Pesaresi, M.; Raymond, D. M.; Richards, A.; Rose, A.; Seez, C.; Summers, S.; Tapper, A.; Uchida, K.; Vazquez Acosta, M.; Virdee, T.; Wright, J.; Zenz, S. C.; Cole, J. E.; Hobson, P. R.; Khan, A.; Kyberd, P.; Leslie, D.; Reid, I. D.; Symonds, P.; Teodorescu, L.; Turner, M.; Borzou, A.; Call, K.; Dittmann, J.; Hatakeyama, K.; Liu, H.; Pastika, N.; Cooper, S. I.; Henderson, C.; Rumerio, P.; West, C.; Arcaro, D.; Avetisyan, A.; Bose, T.; Gastler, D.; Rankin, D.; Richardson, C.; Rohlf, J.; Sulak, L.; Zou, D.; Benelli, G.; Berry, E.; Cutts, D.; Garabedian, A.; Hakala, J.; Heintz, U.; Hogan, J. M.; Jesus, O.; Kwok, K. H. M.; Laird, E.; Landsberg, G.; Mao, Z.; Narain, M.; Piperov, S.; Sagir, S.; Spencer, E.; Syarif, R.; Breedon, R.; Breto, G.; Burns, D.; Calderon De La Barca Sanchez, M.; Chauhan, S.; Chertok, M.; Conway, J.; Conway, R.; Cox, P. T.; Erbacher, R.; Flores, C.; Funk, G.; Gardner, M.; Ko, W.; Lander, R.; Mclean, C.; Mulhearn, M.; Pellett, D.; Pilot, J.; Shalhout, S.; Smith, J.; Squires, M.; Stolp, D.; Tripathi, M.; Bravo, C.; Cousins, R.; Dasgupta, A.; Everaerts, P.; Florent, A.; Hauser, J.; Ignatenko, M.; Mccoll, N.; Saltzberg, D.; Schnaible, C.; Takasugi, E.; Valuev, V.; Weber, M.; Burt, K.; Clare, R.; Ellison, J.; Gary, J. W.; Ghiasi Shirazi, S. M. A.; Hanson, G.; Heilman, J.; Jandir, P.; Kennedy, E.; Lacroix, F.; Long, O. R.; Olmedo Negrete, M.; Paneva, M. I.; Shrinivas, A.; Si, W.; Wei, H.; Wimpenny, S.; Yates, B. R.; Branson, J. G.; Cerati, G. B.; Cittolin, S.; Derdzinski, M.; Holzner, A.; Klein, D.; Krutelyov, V.; Letts, J.; Macneill, I.; Olivito, D.; Padhi, S.; Pieri, M.; Sani, M.; Sharma, V.; Simon, S.; Tadel, M.; Vartak, A.; Wasserbaech, S.; Welke, C.; Wood, J.; Würthwein, F.; Yagil, A.; Zevi Della Porta, G.; Amin, N.; Bhandari, R.; Bradmiller-Feld, J.; Campagnari, C.; Dishaw, A.; Dutta, V.; Franco Sevilla, M.; George, C.; Golf, F.; Gouskos, L.; Gran, J.; Heller, R.; Incandela, J.; Mullin, S. D.; Ovcharova, A.; Qu, H.; Richman, J.; Stuart, D.; Suarez, I.; Yoo, J.; Anderson, D.; Apresyan, A.; Bendavid, J.; Bornheim, A.; Bunn, J.; Chen, Y.; Duarte, J.; Lawhorn, J. M.; Mott, A.; Newman, H. B.; Pena, C.; Spiropulu, M.; Vlimant, J. R.; Xie, S.; Zhu, R. Y.; Andrews, M. B.; Azzolini, V.; Ferguson, T.; Paulini, M.; Russ, J.; Sun, M.; Vogel, H.; Vorobiev, I.; Weinberg, M.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Mcdermott, K.; Mirman, N.; Nicolas Kaufman, G.; Patterson, J. R.; Rinkevicius, A.; Ryd, A.; Skinnari, L.; Soffi, L.; Tan, S. M.; Tao, Z.; Thom, J.; Tucker, J.; Wittich, P.; Zientek, M.; Winn, D.; Abdullin, S.; Albrow, M.; Apollinari, G.; Banerjee, S.; Bauerdick, L. A. T.; Beretvas, A.; Berryhill, J.; Bhat, P. C.; Bolla, G.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chlebana, F.; Cihangir, S.; Cremonesi, M.; Elvira, V. D.; Fisk, I.; Freeman, J.; Gottschalk, E.; Gray, L.; Green, D.; Grünendahl, S.; Gutsche, O.; Hare, D.; Harris, R. M.; Hasegawa, S.; Hirschauer, J.; Hu, Z.; Jayatilaka, B.; Jindariani, S.; Johnson, M.; Joshi, U.; Klima, B.; Kreis, B.; Lammel, S.; Linacre, J.; Lincoln, D.; Lipton, R.; Liu, T.; Lopes De Sá, R.; Lykken, J.; Maeshima, K.; Magini, N.; Marraffino, J. M.; Maruyama, S.; Mason, D.; McBride, P.; Merkel, P.; Mrenna, S.; Nahn, S.; Newman-Holmes, C.; O'Dell, V.; Pedro, K.; Prokofyev, O.; Rakness, G.; Ristori, L.; Sexton-Kennedy, E.; Soha, A.; Spalding, W. J.; Spiegel, L.; Stoynev, S.; Strobbe, N.; Taylor, L.; Tkaczyk, S.; Tran, N. V.; Uplegger, L.; Vaandering, E. W.; Vernieri, C.; Verzocchi, M.; Vidal, R.; Wang, M.; Weber, H. A.; Whitbeck, A.; Wu, Y.; Acosta, D.; Avery, P.; Bortignon, P.; Bourilkov, D.; Brinkerhoff, A.; Carnes, A.; Carver, M.; Curry, D.; Das, S.; Field, R. D.; Furic, I. K.; Konigsberg, J.; Korytov, A.; Low, J. F.; Ma, P.; Matchev, K.; Mei, H.; Mitselmakher, G.; Rank, D.; Shchutska, L.; Sperka, D.; Thomas, L.; Wang, J.; Wang, S.; Yelton, J.; Linn, S.; Markowitz, P.; Martinez, G.; Rodriguez, J. L.; Ackert, A.; Adams, J. R.; Adams, T.; Askew, A.; Bein, S.; Diamond, B.; Hagopian, S.; Hagopian, V.; Johnson, K. F.; Khatiwada, A.; Prosper, H.; Santra, A.; Yohay, R.; Baarmand, M. M.; Bhopatkar, V.; Colafranceschi, S.; Hohlmann, M.; Noonan, D.; Roy, T.; Yumiceva, F.; Adams, M. R.; Apanasevich, L.; Berry, D.; Betts, R. R.; Bucinskaite, I.; Cavanaugh, R.; Evdokimov, O.; Gauthier, L.; Gerber, C. E.; Hofman, D. J.; Jung, K.; Kurt, P.; O'Brien, C.; Sandoval Gonzalez, I. D.; Turner, P.; Varelas, N.; Wang, H.; Wu, Z.; Zakaria, M.; Zhang, J.; Bilki, B.; Clarida, W.; Dilsiz, K.; Durgut, S.; Gandrajula, R. P.; Haytmyradov, M.; Khristenko, V.; Merlo, J.-P.; Mermerkaya, H.; Mestvirishvili, A.; Moeller, A.; Nachtman, J.; Ogul, H.; Onel, Y.; Ozok, F.; Penzo, A.; Snyder, C.; Tiras, E.; Wetzel, J.; Yi, K.; Anderson, I.; Blumenfeld, B.; Cocoros, A.; Eminizer, N.; Fehling, D.; Feng, L.; Gritsan, A. V.; Maksimovic, P.; Martin, C.; Osherson, M.; Roskes, J.; Sarica, U.; Swartz, M.; Xiao, M.; Xin, Y.; You, C.; Al-bataineh, A.; Baringer, P.; Bean, A.; Boren, S.; Bowen, J.; Bruner, C.; Castle, J.; Forthomme, L.; Kenny, R. P., III; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Mcbrayer, W.; Murray, M.; Sanders, S.; Stringer, R.; Tapia Takaki, J. D.; Wang, Q.; Ivanov, A.; Kaadze, K.; Maravin, Y.; Mohammadi, A.; Saini, L. K.; Skhirtladze, N.; Toda, S.; Rebassoo, F.; Wright, D.; Anelli, C.; Baden, A.; Baron, O.; Belloni, A.; Calvert, B.; Eno, S. C.; Ferraioli, C.; Gomez, J. A.; Hadley, N. J.; Jabeen, S.; Kellogg, R. G.; Kolberg, T.; Kunkle, J.; Lu, Y.; Mignerey, A. C.; Ricci-Tam, F.; Shin, Y. H.; Skuja, A.; Tonjes, M. B.; Tonwar, S. C.; Abercrombie, D.; Allen, B.; Apyan, A.; Barbieri, R.; Baty, A.; Bi, R.; Bierwagen, K.; Brandt, S.; Busza, W.; Cali, I. A.; Demiragli, Z.; Di Matteo, L.; Gomez Ceballos, G.; Goncharov, M.; Hsu, D.; Iiyama, Y.; Innocenti, G. M.; Klute, M.; Kovalskyi, D.; Krajczar, K.; Lai, Y. S.; Lee, Y.-J.; Levin, A.; Luckey, P. D.; Maier, B.; Marini, A. C.; Mcginn, C.; Mironov, C.; Narayanan, S.; Niu, X.; Paus, C.; Roland, C.; Roland, G.; Salfeld-Nebgen, J.; Stephans, G. S. F.; Sumorok, K.; Tatar, K.; Varma, M.; Velicanu, D.; Veverka, J.; Wang, J.; Wang, T. W.; Wyslouch, B.; Yang, M.; Zhukova, V.; Benvenuti, A. C.; Chatterjee, R. M.; Evans, A.; Finkel, A.; Gude, A.; Hansen, P.; Kalafut, S.; Kao, S. C.; Kubota, Y.; Lesko, Z.; Mans, J.; Nourbakhsh, S.; Ruckstuhl, N.; Rusack, R.; Tambe, N.; Turkewitz, J.; Acosta, J. G.; Oliveros, S.; Avdeeva, E.; Bartek, R.; Bloom, K.; Claes, D. R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Kamalieddin, R.; Kravchenko, I.; Malta Rodrigues, A.; Meier, F.; Monroy, J.; Siado, J. E.; Snow, G. R.; Stieger, B.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alverson, G.; Barberis, E.; Hortiangtham, A.; Massironi, A.; Morse, D. M.; Nash, D.; Orimoto, T.; Teixeira De Lima, R.; Trocino, D.; Wang, R.-J.; Wood, D.; Bhattacharya, S.; Charaf, O.; Hahn, K. A.; Kubik, A.; Kumar, A.; Mucia, N.; Odell, N.; Pollack, B.; Schmitt, M. H.; Sung, K.; Trovato, M.; Velasco, M.; Dev, N.; Hildreth, M.; Hurtado Anampa, K.; Jessop, C.; Karmgard, D. J.; Kellams, N.; Lannon, K.; Marinelli, N.; Meng, F.; Mueller, C.; Musienko, Y.; Planer, M.; Reinsvold, A.; Ruchti, R.; Smith, G.; Taroni, S.; Wayne, M.; Wolf, M.; Woodard, A.; Alimena, J.; Antonelli, L.; Brinson, J.; Bylsma, B.; Durkin, L. S.; Flowers, S.; Francis, B.; Hart, A.; Hill, C.; Hughes, R.; Ji, W.; Liu, B.; Luo, W.; Puigh, D.; Winer, B. L.; Wulsin, H. W.; Cooperstein, S.; Driga, O.; Elmer, P.; Hardenbrook, J.; Hebda, P.; Lange, D.; Luo, J.; Marlow, D.; Mc Donald, J.; Medvedeva, T.; Mei, K.; Mooney, M.; Olsen, J.; Palmer, C.; Piroué, P.; Stickland, D.; Svyatkovskiy, A.; Tully, C.; Zuranski, A.; Malik, S.; Barker, A.; Barnes, V. E.; Folgueras, S.; Gutay, L.; Jha, M. K.; Jones, M.; Jung, A. W.; Miller, D. H.; Neumeister, N.; Schulte, J. F.; Shi, X.; Sun, J.; Wang, F.; Xie, W.; Parashar, N.; Stupak, J.; Adair, A.; Akgun, B.; Chen, Z.; Ecklund, K. M.; Geurts, F. J. M.; Guilbaud, M.; Li, W.; Michlin, B.; Northup, M.; Padley, B. P.; Redjimi, R.; Roberts, J.; Rorie, J.; Tu, Z.; Zabel, J.; Betchart, B.; Bodek, A.; de Barbaro, P.; Demina, R.; Duh, Y. t.; Ferbel, T.; Galanti, M.; Garcia-Bellido, A.; Han, J.; Hindrichs, O.; Khukhunaishvili, A.; Lo, K. H.; Tan, P.; Verzetti, M.; Agapitos, A.; Chou, J. P.; Contreras-Campana, E.; Gershtein, Y.; Gómez Espinosa, T. A.; Halkiadakis, E.; Heindl, M.; Hidas, D.; Hughes, E.; Kaplan, S.; Kunnawalkam Elayavalli, R.; Kyriacou, S.; Lath, A.; Nash, K.; Saka, H.; Salur, S.; Schnetzer, S.; Sheffield, D.; Somalwar, S.; Stone, R.; Thomas, S.; Thomassen, P.; Walker, M.; Delannoy, A. G.; Foerster, M.; Heideman, J.; Riley, G.; Rose, K.; Spanier, S.; Thapa, K.; Bouhali, O.; Celik, A.; Dalchenko, M.; De Mattia, M.; Delgado, A.; Dildick, S.; Eusebi, R.; Gilmore, J.; Huang, T.; Juska, E.; Kamon, T.; Mueller, R.; Pakhotin, Y.; Patel, R.; Perloff, A.; Perniè, L.; Rathjens, D.; Rose, A.; Safonov, A.; Tatarinov, A.; Ulmer, K. A.; Akchurin, N.; Cowden, C.; Damgov, J.; De Guio, F.; Dragoiu, C.; Dudero, P. R.; Faulkner, J.; Gurpinar, E.; Kunori, S.; Lamichhane, K.; Lee, S. W.; Libeiro, T.; Peltola, T.; Undleeb, S.; Volobouev, I.; Wang, Z.; Greene, S.; Gurrola, A.; Janjam, R.; Johns, W.; Maguire, C.; Melo, A.; Ni, H.; Sheldon, P.; Tuo, S.; Velkovska, J.; Xu, Q.; Arenton, M. W.; Barria, P.; Cox, B.; Goodell, J.; Hirosky, R.; Ledovskoy, A.; Li, H.; Neu, C.; Sinthuprasith, T.; Sun, X.; Wang, Y.; Wolfe, E.; Xia, F.; Clarke, C.; Harr, R.; Karchin, P. E.; Sturdy, J.; Belknap, D. A.; Caillol, C.; Dasu, S.; Dodd, L.; Duric, S.; Gomber, B.; Grothe, M.; Herndon, M.; Hervé, A.; Klabbers, P.; Lanaro, A.; Levine, A.; Long, K.; Loveless, R.; Ojalvo, I.; Perry, T.; Pierro, G. A.; Polese, G.; Ruggles, T.; Savin, A.; Smith, N.; Smith, W. H.; Taylor, D.; Woods, N.; CMS Collaboration

2017-04-01

A search for the resonant production of high-mass photon pairs is presented. The search focuses on spin-0 and spin-2 resonances with masses between 0.5 and 4.5 TeV, and with widths, relative to the mass, between 1.4 ×10-4 and 5.6 ×10-2. The data sample corresponds to an integrated luminosity of 12.9 fb-1 of proton-proton collisions collected with the CMS detector in 2016 at a center-of-mass energy of 13 TeV. No significant excess is observed relative to the standard model expectation. The results of the search are combined statistically with those previously obtained in 2012 and 2015 at √{ s} = 8 and 13 TeV, respectively, corresponding to integrated luminosities of 19.7 and 3.3 fb-1, to derive exclusion limits on scalar resonances produced through gluon-gluon fusion, and on Randall-Sundrum gravitons. The lower mass limits for Randall-Sundrum gravitons range from 1.95 to 4.45 TeV for coupling parameters between 0.01 and 0.2. These are the most stringent limits on Randall-Sundrum graviton production to date.

Search for high-mass diphoton resonances in proton-proton collisions at 13 TeV and combination with 8 TeV search

DOE PAGES

Khachatryan, Vardan

2017-01-19

A search for the resonant production of high-mass photon pairs is presented. The search focuses on spin-0 and spin-2 resonances with masses between 0.5 and 4.5 TeV, and with widths, relative to the mass, between 1.4 ×10 -4 and 5.6 ×10 -2. The data sample corresponds to an integrated luminosity of 12.9 fb -1 of proton–proton collisions collected with the CMS detector in 2016 at a center-of-mass energy of 13TeV. No significant excess is observed relative to the standard model expectation. The results of the search are combined statistically with those previously obtained in 2012 and 2015 atmore » $$\\sqrt{s}$$ = 8 and 13 TeV, respectively, corresponding to integrated luminosities of 19.7 and 3.3 fb -1, to derive exclusion limits on scalar resonances produced through gluon-gluon fusion, and on Randall-Sundrum gravitons. The lower mass limits for Randall-Sundrum gravitons range from 1.95 to 4.45 TeV for coupling parameters between 0.01 and 0.2. These are the most stringent limits on Randall-Sundrum graviton production to date.« less

TEM and TED investigation of Ag/PbTe thin film bilayers.

NASA Astrophysics Data System (ADS)

Mandrino, Đorđe; Marinković, V.

Morphology and phase structure of Ag/PbTe thin film bilayers were investigated. This system was of particular interest because of interfacial reaction observed previously in an analogous Ag/SnTe system. Reaction products due to the interdiffusion of Ag with the substrate were determined as well as their orientations. They were discussed in view of the reaction products' structural relations to the PbTe.

Stable Isotope-Assisted Metabolic Profiling Reveals Growth Mode Dependent Differential Metabolism and Multiple Catabolic Pathways of l-Phenylalanine in Rubrivivax benzoatilyticus JA2.

PubMed

Mekala, Lakshmi Prasuna; Mohammed, Mujahid; Chintalapati, Sasikala; Chintalapati, Venkata Ramana

2018-01-05

Anoxygenic phototrophic bacteria are metabolically versatile and survive under different growth modes using diverse organic compounds, yet their metabolic diversity is largely unexplored. In the present study, we employed stable-isotope-assisted metabolic profiling to unravel the l-phenylalanine catabolism in Rubrivivax benzoatilyticus JA2 under varying growth modes. Strain JA2 grows under anaerobic and aerobic conditions by utilizing l-phenylalanine as a nitrogen source. Furthermore, ring-labeled 13 C 6 -phenylalanine feeding followed by liquid chromatography-mass spectrometry exometabolite profiling revealed 60 labeled metabolic features (M + 6, M + 12, and M + 18) derived solely from l-phenylalanine, of which 11 were identified, 7 putatively identified, and 42 unidentified under anaerobic and aerobic conditions. However, labeled metabolites were significantly higher in aerobic compared to anaerobic conditions. Furthermore, detected metabolites and enzyme activities indicated multiple l-phenylalanine catabolic routes mainly Ehrlich, homogentisate-dependent melanin, benzenoid, and unidentified pathways operating under anaerobic and aerobic conditions in strain JA2. Interestingly, the study indicated l-phenylalanine-dependent and independent benzenoid biosynthesis in strain JA2 and a differential flux of l-phenylalanine to Ehrlich and benzenoid pathways under anaerobic and aerobic conditions. Additionally, unidentified labeled metabolites strongly suggest the presence of unknown phenylalanine catabolic routes in strain JA2. Overall, the study uncovered the l-phenylalanine catabolic diversity in strain JA2 and demonstrated the potential of stable isotope-assisted metabolomics in unraveling the hidden metabolic repertoire.

Anomalous thermoelectricity in strained Bi2Te3 films.

PubMed

Liu, Yucong; Chen, Jiadong; Deng, Huiyong; Hu, Gujin; Zhu, Daming; Dai, Ning

2016-09-07

Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization.

Synthesis and characteristics of PbTe1-xSex thin films formed via electrodeposition

NASA Astrophysics Data System (ADS)

Bae, Sangwoo; Lee, Sangwon; Sohn, Ho-Sang; Lee, Ho Seong

2017-09-01

PbTe1-xSex films were grown using electrodeposition and their microstructural and electrical properties were investigated. The Se content incorporated in the PbTe1-xSex films increased with the Se content in the electrolyte. X-ray diffraction peaks of the PbTe1-xSex films shifted to higher angles according to Vegard's law. For the sample with a small Se content, the PbTe1-xSex films showed a characteristic feather-like dendrite, while PbTe1-xSex films with a higher Se content showed faceted particles. Transmission electron microscopy results showed that the feather-like dendritic PbTe1-xSex grew like a single crystal and a growing twinning was formed in some dendrites. With an increase in the Se content in the PbTe1-xSex thin films, the carrier concentrations increased but the mobility reduced. Electrical conductivity of the PbTe1-xSex thin films increased and then slightly decreased with increasing Se content.

TeV Gamma Rays From Galactic Center Pulsars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hooper, Dan; Cholis, Ilias; Linden, Tim

Measurements of the nearby pulsars Geminga and B0656+14 by the HAWC and Milagro telescopes have revealed the presence of bright TeV-emitting halos surrounding these objects. If young and middle-aged pulsars near the Galactic Center transfer a similar fraction of their energy into TeV photons, then these sources could dominate the emission that is observed by HESS and other ground-based telescopes from the innermost ~10^2 parsecs of the Milky Way. In particular, both the spectral shape and the angular extent of this emission is consistent with TeV halos produced by a population of pulsars. The overall flux of this emission requiresmore » a birth rate of ~100-1000 neutron stars per Myr near the Galactic Center, in good agreement with recent estimates.« less

van der Waals epitaxy of CdTe thin film on graphene

NASA Astrophysics Data System (ADS)

Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

2016-10-01

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

ZnTeO{sub 3} crystal growth by a modified Bridgman technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nawash, Jalal M., E-mail: nawashj@uww.edu; Lynn, Kelvin G.

2014-12-15

Highlights: • ZnTeO{sub 3} single crystals were grown for the first time by a modified Bridgman method. • The growth is still possible in a system that lacks congruent melting. • A growth is best when melt is exposed to a steeper axial thermal gradient. • Optical and electrical properties were investigated for the grown crystals. - Abstract: Zinc Tellurite (ZnTeO{sub 3}) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO{sub 3} was hindered by many complicating factors, such as the evaporation of TeO{submore » 2} above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO{sub 3} single crystals, it was found that large (≥10 cm{sup 3}) single ZnTeO{sub 3} crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO{sub 3}. Some optical, electrical and structural properties of ZnTeO{sub 3} single crystals were reported in this paper.« less

HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal

NASA Astrophysics Data System (ADS)

Yasar, Bengisu; Ergunt, Yasin; Kabukcuoglu, Merve Pinar; Parlak, Mehmet; Turan, Rasit; Kalay, Yunus Eren

2018-01-01

In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd0.95 Zn0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the ⟨211⟩ direction were examined by transmission electron microscopy (TEM) and the corresponding HRTEM image simulations were performed by using a quantitative scanning TEM simulation package.

Linear and nonlinear optical characteristics of Te nanoparticles-doped germanate glasses

NASA Astrophysics Data System (ADS)

Xu, Zhousu; Guo, Qiangbing; Liu, Chang; Ma, Zhijun; Liu, Xiaofeng; Qiu, Jianrong

2016-10-01

Te nanoparticles (NPs)-doped GeO2-MgO-B2O3-Al2O3-TeO2 glasses were prepared by the conventional melt-quenching method. Based on X-ray photoelectron spectroscopy, Raman spectroscopy and transmission electron microscope observation, the coloration of the glass at high TeO2 concentration is ascribed to the precipitation of elemental Te NPs with a size of 5-10 nm in the germanate glass. Optical absorption spectra and nonlinear optical (NLO) properties of the glass samples were analyzed by UV-3600 spectrophotometry and Z-scan technique, respectively. The nonlinear absorption coefficient ( β) and the imaginary part of the third-order NLO susceptibility (Im χ (3)) were estimated to be 1.74 cm/GW and 1.142 × 10-12 esu for laser power of 95 μW, respectively. Due to the excellent NLO properties, the Te NPs-doped germanate glasses may have potential applications for ultrafast optical switch and photonics.

Aniline Is an Inducer, and Not a Precursor, for Indole Derivatives in Rubrivivax benzoatilyticus JA2

PubMed Central

Mohammed, Mujahid; Ch, Sasikala; Ch, Ramana V.

2014-01-01

Rubrivivax benzoatilyticus JA2 and other anoxygenic photosynthetic bacteria produce indole derivatives when exposed to aniline, a xenobiotic compound. Though this phenomenon has been reported previously, the role of aniline in the production of indoles is still a biochemical riddle. The present study aims at understanding the specific role of aniline (as precursor or stimulator) in the production of indoles and elucidating the biochemical pathway of indoles in aniline-exposed cells by using stable isotope approaches. Metabolic profiling revealed tryptophan accumulation only in aniline exposed cells along with indole 3-acetic acid (IAA) and indole 3-aldehyde (IAld), the two major catabolites of tryptophan. Deuterium labelled aniline feeding studies revealed that aniline is not a precursor of indoles in strain JA2. Further, production of indoles only in aniline-exposed cells suggests that aniline is an indoles stimulator. In addition, production of indoles depended on the presence of a carbon source, and production enhanced when carbon sources were added to the culture. Isotope labelled fumarate feeding identified, fumarate as the precursor of indole, indicating de novo synthesis of indoles. Glyphosate (shikimate pathway inhibitor) inhibited the indoles production, accumulation of tryptophan, IAA and IAld indicating that indoles synthesis in strain JA2 occurs via the de novo shikimate pathway. The up-regulation of anthranilate synthase gene and induction of anthranilate synthase activity correlated well with tryptophan production in strain JA2. Induction of tryptophan aminotransferase and tryptophan 2-monooxygenase activities corroborated well with IAA levels, suggesting that tryptophan catabolism occurs simultaneously in aniline exposed cells. Our study demonstrates that aniline (stress) stimulates tryptophan/indoles synthesis via the shikimate pathway by possibly modulating the metabolic pathway. PMID:24533057

Aniline is an inducer, and not a precursor, for indole derivatives in Rubrivivax benzoatilyticus JA2.

PubMed

Mujahid, Mohammed; Sasikala, Ch; Ramana, Ch V

2014-01-01

Rubrivivax benzoatilyticus JA2 and other anoxygenic photosynthetic bacteria produce indole derivatives when exposed to aniline, a xenobiotic compound. Though this phenomenon has been reported previously, the role of aniline in the production of indoles is still a biochemical riddle. The present study aims at understanding the specific role of aniline (as precursor or stimulator) in the production of indoles and elucidating the biochemical pathway of indoles in aniline-exposed cells by using stable isotope approaches. Metabolic profiling revealed tryptophan accumulation only in aniline exposed cells along with indole 3-acetic acid (IAA) and indole 3-aldehyde (IAld), the two major catabolites of tryptophan. Deuterium labelled aniline feeding studies revealed that aniline is not a precursor of indoles in strain JA2. Further, production of indoles only in aniline-exposed cells suggests that aniline is an indoles stimulator. In addition, production of indoles depended on the presence of a carbon source, and production enhanced when carbon sources were added to the culture. Isotope labelled fumarate feeding identified, fumarate as the precursor of indole, indicating de novo synthesis of indoles. Glyphosate (shikimate pathway inhibitor) inhibited the indoles production, accumulation of tryptophan, IAA and IAld indicating that indoles synthesis in strain JA2 occurs via the de novo shikimate pathway. The up-regulation of anthranilate synthase gene and induction of anthranilate synthase activity correlated well with tryptophan production in strain JA2. Induction of tryptophan aminotransferase and tryptophan 2-monooxygenase activities corroborated well with IAA levels, suggesting that tryptophan catabolism occurs simultaneously in aniline exposed cells. Our study demonstrates that aniline (stress) stimulates tryptophan/indoles synthesis via the shikimate pathway by possibly modulating the metabolic pathway.

Doping effect on the thermoelectric properties of chalcopyrite CuGaTe2

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Singh, Birender; Kumar, Pradeep

2018-05-01

In the present work, we have investigated the thermoelectric properties of CuGaTe2 by combining the first principle calculations with Boltzmann transport theory. CuGaTe2 is found to be a potential thermoelectric material with Seebeck coefficient 275µVK-1 at 200K. The thermoelectric properties of the compound can be further improved by doping it with p as well as n-type charge carriers. The heavily p-doped and lightly n-doped, CuGaTe2 provides power factor comparable to that of state-of-art Bi2Te3.

Structure of TeO2 - LiNbO3 glasses

NASA Astrophysics Data System (ADS)

Shinde, A. B.; Krishna, P. S. R.; Rao, Rekha

2017-05-01

Tellurite based lithium niobate glasses with composition (100-x)TeO2-xLiNbO3 (x=0.1,0.2 & 0.3) were prepared by conventional melt quenching method. The microscopic structural investigation of these glasses is carried out by means of neutron diffraction and Raman scattering measurements. It is found that the basic structural units in these glasses are TeO4 trigonal bipyramids(TBP), TeO3 trigonal pyramids(TP) and NbO6 Octahedra depending on the composition. It is evident from Raman studies that TBPs decreases, TPs increases and NbO6 Octahedra increases with increasing x. From Neutron diffraction studies it is found that network is comprised of TBPs and TPs along with TeO3+1 structural units. Distorted NbO6 octahedral units are present and also increase with the increase in x.

Vibrational contributions to the phase stability of PbS-PbTe alloys

NASA Astrophysics Data System (ADS)

Doak, Jeff W.; Wolverton, C.; OzoliĆš, Vidvuds

2015-11-01

The thermoelectric figure of merit (Z T ) of semiconductors such as PbTe can be improved by forming nanostructures within the bulk of these materials. Alloying PbTe with PbS causes PbS-rich nanostructures to precipitate from the solid solution, scattering phonons and increasing Z T . Understanding the thermodynamics of this process is crucial to optimizing the efficiency gains of this technique. Previous calculations of the thermodynamics of PbS-PbTe alloys [(J. W. Doak and C. Wolverton, Phys. Rev. B 86, 144202 (2012), 10.1103/PhysRevB.86.144202] found that mixing energetics alone were not sufficient to quantitatively explain the thermodynamic driving force for phase separation in these materials: first-principles calculations of the thermodynamics of phase separation overestimate the thermodynamic driving force for precipitation of PbS-rich nanostructures from PbS-PbTe alloys. In this work, we re-examine the thermodynamics of PbS-PbTe, including the effects of vibrational entropy in the free energy through frozen-phonon calculations of special quasirandom structures (SQS) to explain this discrepancy between first-principles and experimental phase stability. We find that vibrational entropy of mixing reduces the calculated maximum miscibility gap temperature TG of PbS-PbTe by 470 K, bringing the error between calculated and experimental TG down from 700 to 230 K. Our calculated vibrational spectra of PbS-PbTe SQS exhibit dynamic instabilities of S ions that corroborate reports of low-T ferroelectriclike phase transitions in solid solutions of PbS and PbTe, which are not present in either of the constituent compounds. We use our calculated vibrational spectra to obtain phase transition temperatures, which are in qualitative agreement with experimental results for PbTe-rich alloys, as well as to predict the existence of a low-T displacive phase transition in PbS-rich PbS-PbTe, which has not yet been experimentally investigated.

Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag-Cu-In Brazing Alloy.

PubMed

Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

2018-01-10

In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n -type 9.104 × 10 -3 mol % PbI₂-doped PbTe TE legs and the Ag 0.32 Cu 0.43 In 0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm² was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators.

Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag–Cu–In Brazing Alloy

PubMed Central

Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

2018-01-01

In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n-type 9.104 × 10−3 mol % PbI2-doped PbTe TE legs and the Ag0.32Cu0.43In0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm2 was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators. PMID:29320430

Recent progress in MBE grown HgCdTe materials and devices at UWA

NASA Astrophysics Data System (ADS)

Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

2016-05-01

HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility.

PubMed

Shen, Jie; Xie, Yujun; Cha, Judy J

2015-06-10

Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, In(x)Sn(1-x)Te, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of In(x)Sn(1-x)Te such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in In(x)Sn(1-x)Te nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors.

Biochemical Testing of Potentially Hazardous Chemicals for Toxicity Using Mammalian Liver Cell Cultures.

DTIC Science & Technology

1992-04-09

the culture medium. The HEPA-2 mouse cells are known to synthesize and to secrete albumin, alpha - fetoprotein , transferrin, ceruloplasmin and...Parker, C.L. and Kute, T.E. (1981). Immunoprecipitation assay of alpha - fetoprotein synthesis by cultured mouse hepatoma cells treated with estrogens and...Infection and Immunity 34:908-914. Rosebrock, J.A., C.L. Parker and T.E. Kute (1981). Immunoprecipitation assay of alpha - fetoprotein synthesis by cultured

Diffusive-convective physical vapor transport of PbTe from a Te-rich solid source

NASA Technical Reports Server (NTRS)

Zoutendyk, J.; Akutagawa, W.

1982-01-01

Crystal growth of PbTe by physical vapor transport (sublimation) in a closed ampoule is governed by the vapor species in thermal equilibrium with the solid compound. Deviations from stoichiometry in the source material cause diffusion limitation of the transport rate, which can be modified by natural (gravity-driven) convection. Mass-transport experiments have been performed using Te-rich material wherein sublimation rates have been measured in order to study the effects of natural convection in diffusion-limited vapor transport. Linear velocities for both crystal growth and evaporation (back sublimation) have been measured for transport in the direction of gravity, horizontally, and opposite to gravity. The experimental results are discussed in terms of both the one-dimensional diffusive-advective model and current, more sophisticated theory which includes natural convection. There is some evidence that convection effects from radial temperature gradients and solutal density gradients have been observed.

W' Boson near 2 TeV: Predictions for Run 2 of the LHC.

PubMed

Dobrescu, Bogdan A; Liu, Zhen

2015-11-20

We present a renormalizable theory that includes a W' boson of mass in the 1.8-2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e(+)e(-)jj, Wh(0), and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4-4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, for M_(Z')=3.4  TeV, and an order of magnitude smaller for M_(Z')=4.5  TeV.

HgCdTe avalanche photodiodes: A review

NASA Astrophysics Data System (ADS)

Singh, Anand; Srivastav, Vanya; Pal, Ravinder

2011-10-01

This paper presents a comprehensive review of fundamental issues, device architectures, technology development and applications of HgCdTe based avalanche photodiodes (APD). High gain, above 5×10 3, a low excess noise factor close to unity, THz gain-bandwidth product, and fast response in the range of pico-seconds has been achieved by electron-initiated avalanche multiplication for SWIR, MWIR, and LWIR detector applications involving low optical signals. Detector arrays with good element-to-element uniformity have been fabricated paving the way for fabrication of HgCdTe-APD FPAs.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

CdTe quantum-dot-modified ZnO nanowire heterostructure